Nb-based superconducting tunnel junctions for X-ray spectroscopy: TaOx and AlOx tunnelbarriers

International Nuclear Information System (INIS)

Bruijn, M.P.; Kiewiet, F.; Luiten, O.J.; Michels, F.A.; De Korte, P.A.J.

1996-01-01

Results are presented of an optimization study of TaO x -tunnel barriers in superconducting tunnel junctions for X-ray spectroscopy. The properties did not satisfy the critical demands. A comparison is made with first results on AlO x -barriers made with the same processing setup. AFM and TEM were used in studies of interface roughness. (orig.)

Observation of gap inhomogeneity in superconducting aluminum tunnel junctions

International Nuclear Information System (INIS)

Gilmartin, H.R.

1982-01-01

Experiments using a novel technique to investigate spatial variations in the superconducting gap parameter of aluminum films driven out of equilibrium by intense tunnel injection are described. The technique features fine spatial and energy resolution of the gap parameter. The experiments employed a finely focused laser spot scanned across the surface of a double tunnel junction sandwich to produce a very weak electrical signal that was analyzed to determine the gap parameter as a function of position in the plane of the device. Technical aspects of the problem are emphasized, since a new technique is presented. An elaborate explanation of the origin and analysis of the laser induced signal is given, as well as a detailed description of the experimental apparatus. Very briefly, the principle of operation is that a large flux of quasiparticles is injected through the lower junction of the sandwich into the middle aluminum film, and the upper junction serves to detect the effects of that injection. The middle film takes on two or more values of the gap parameter under injection, presumably indicating spatial variation. The presence of a small laser spot on a given point on the device perturbs the potential on the detector junction very slightly. That perturbation is measured as a function of bias current to determine the gap parameter of the middle film at that point. The spot is scanned in a raster pattern to produce a picture of the space dependence of the gap parameter

Superconducting tunneling with the tunneling Hamiltonian. II. Subgap harmonic structure

International Nuclear Information System (INIS)

Arnold, G.B.

1987-01-01

The theory of superconducting tunneling without the tunneling Hamiltonian is extended to treat superconductor/insulator/superconductor junctions in which the transmission coefficient of the insulating barrier approaches unity. The solution for the current in such junctions is obtained by solving the problem of a particle hopping in a one-dimensional lattice of sites, with forward and reverse transfer integrals that depend on the site. The results are applied to the problem of subgap harmonic structure in superconducting tunneling. The time-dependent current at finite voltage through a junction exhibiting subgap structure is found to have terms that oscillate at all integer multiples of the Josephson frequency, n(2eV/h). The amplitudes of these new, and as yet unmeasured, ac current contributions as a function of voltage are predicted

Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

Energy Technology Data Exchange (ETDEWEB)

Rashid, H., E-mail: hawal@chalmers.se; Desmaris, V.; Pavolotsky, A.; Belitsky, V. [Group for Advanced Receiver Development, Earth and Space Sciences Department, Chalmers University of Technology, Gothenburg, 412 96 (Sweden)

2016-04-15

In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

Harmonic and reactive behavior of the quasiparticle tunnel current in SIS junctions

International Nuclear Information System (INIS)

Rashid, H.; Desmaris, V.; Pavolotsky, A.; Belitsky, V.

2016-01-01

In this paper, we show theoretically and experimentally that the reactive quasiparticle tunnel current of the superconductor tunnel junction could be directly measured at specific bias voltages for the higher harmonics of the quasiparticle tunnel current. We used the theory of quasiparticle tunneling to study the higher harmonics of the quasiparticle tunnel current in superconducting tunnel junction in the presence of rf irradiation. The impact of the reactive current on the harmonic behavior of the quasiparticle tunnel current was carefully studied by implementing a practical model with four parameters to model the dc I-V characteristics of the superconducting tunnel junction. The measured reactive current at the specific bias voltage is in good agreement with our theoretically calculated reactive current through the Kramers-Kronig transform. This study also shows that there is an excellent correspondence between the behavior of the predicted higher harmonics using the previously established theory of quasiparticle tunnel current in superconducting tunnel junctions by J.R. Tucker and M.J. Feldman and the measurements presented in this paper.

Zurek–Kibble Symmetry Breaking Process in Superconducting Rings; Spontaneous Fluxon Formation in Annular Josephson Tunnel Junctions

DEFF Research Database (Denmark)

Aarøe, Morten; Monaco, Roberto; Dmitriev, P

2007-01-01

We report on new investigations of spontaneous symmetry breaking in non-adiabatic phase transitions. This Zurek-Kibble (ZK) process is mimicked in solid state systems by trapping of magnetic flux quanta, fluxons, in a long annular Josephson tunnel junction quenched through the normal-superconducting...

Superconductive tunnel structures as radiation detectors

International Nuclear Information System (INIS)

Barone, A.; Gray, K.E.

1985-08-01

A brief review is given on various aspects of the potential of superconducting tunnel junctions as detectors for atomic and nuclear radiations. On the basis of recent results main advantages and drawbacks are indicated providing a preliminary comparison with the presently used semiconductor detectors. The basic ideas underlying the physics of the interaction of nuclear particles and other radiations with superconducting junctions are outlined. 9 refs., 1 tab

Operating modes of superconducting tunnel junction device

Energy Technology Data Exchange (ETDEWEB)

Maehata, Keisuke [Kyushu Univ., Fukuoka (Japan). Faculty of Engineering

1998-07-01

In the Electrotechnical Laboratory, an Nb type superconducting tunnel junction (STJ) device with 200 x 200 sq. micron in area and super high quality was manufactured. By using 55-fe source, response of this large area STJ to X-ray was measured. In this measurement, two action modes with different output wave height from front amplifier were observed. Then, in this study, current-voltage feature of the element in each action mode was analyzed to elucidate a mechanism to form such two action modes. The feature was analyzed by using first order approximate solution on cavity resonance mode of Sine-Gordon equation. From the analytical results, it could be supposed that direction and magnitude of effective magnetic field penetrating into jointed area changed by an induction current effect owing to impressing speed of the magnetic field, which brings two different current-voltage features to make possible to observe two action modes with different pulse wave height. (G.K.)

Proximity effect and hot-electron diffusion in Ag/Al2O3/Al tunnel junctions

International Nuclear Information System (INIS)

Netel, H.; Jochum, J.; Labov, S.E.; Mears, C.A.; Frank, M.; Chow, D.; Lindeman, M.A.; Hiller, L.J.

1997-01-01

We have fabricated Ag/Al 2 O 3 /Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition, these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z, ultra-pure superconducting crystals. 5 refs., 8 figs

Tunneling conductance in superconductor-hybrid double quantum dots Josephson junction

Science.gov (United States)

Chamoli, Tanuj; Ajay

2018-05-01

The present work deals with the theoretical model study to analyse the tunneling conductance across a superconductor hybrid double quantum dots tunnel junction (S-DQD-S). Recently, there are many experimental works where the Josephson current across such nanoscopic junction is found to be dependent on nature of the superconducting electrodes, coupling of the hybrid double quantum dot's electronic states with the electronic states of the superconductors and nature of electronic structure of the coupled dots. For this, we have attempted a theoretical model containing contributions of BCS superconducting leads, magnetic coupled quantum dot states and coupling of superconducting leads with QDs. In order to include magnetic coupled QDs the contributions of competitive Kondo and Ruderman-Kittel- Kasuya-Yosida (RKKY) interaction terms are also introduced through many body effects in the model Hamiltonian at low temperatures (where Kondo temperature TK tunnel junctions. Tunneling conductance is proportional to DOS, hence we can analyse it's behaviour with the help of DOS.

Development of superconducting tunnel junction as photon counting detector in astronomy

International Nuclear Information System (INIS)

Jorel, C.

2004-12-01

This work describes the development of S/Al-AlOx-Al/S Superconducting Tunnel Junctions (STJ) to count photons for astronomical applications in the near-infrared. The incoming light energy is converted into excited charges in a superconducting layer (S, either Nb or Ta) with a population proportional to the deposited energy. The photon energy can thus be evaluated by integrating the tunnel current induced in a voltage biased junction at a very low temperature (100 mK). The performance of STJ for light detection is discussed in the first chapter and compared with the best performances obtained with other techniques based on either superconductors. At the beginning of the thesis, a previous manufacturing process made it possible to obtain good quality Nb based junctions and preliminary results for photon counting. The objective of the thesis was to replace Nb as absorber with Ta, an intrinsically more sensitive material, and secondly to develop a new and more efficient manufacturing process. We first focused on the optimization of the Tantalum thin film quality. Structural analysis showed that these films can be grown epitaxially by magnetron sputtering onto an R-plane sapphire substrate heated to 600 Celsius degrees and covered by a thin Nb buffer layer. Electrical transport measurement from room to low temperatures gave excellent Relative Resistive Ratios of about 50 corresponding to mean free path of the order of 100 nm. Then, we conceived an original manufacturing process batch on 3 inch diameter sapphire substrate with five mask levels. These masks made it possible to produce single pixel STJ of different sizes (from 25*25 to 50*50 square microns) and shapes. We also produced multiple junctions onto a common absorber as well as 9-pixel arrays. Thanks to the development of this process we obtained a very large percentage of quality junctions (>90%) with excellent measured normal resistances of a few micro-ohm cm 2 and low leakage currents of the order of one n

The two Josephson junction flux qubit with large tunneling amplitude

International Nuclear Information System (INIS)

Shnurkov, V.I.; Soroka, A.A.; Mel'nik, S.I.

2008-01-01

In this paper we discuss solid-state nanoelectronic realizations of Josephson flux qubits with large tunneling amplitude between the two macroscopic states. The latter can be controlled via the height and form of the potential barrier, which is determined by quantum-state engineering of the flux qubit circuit. The simplest circuit of the flux qubit is a superconducting loop interrupted by a Josephson nanoscale tunnel junction. The tunneling amplitude between two macroscopically different states can be increased substantially by engineering of the qubit circuit if the tunnel junction is replaced by a ScS contact. However, only Josephson tunnel junctions are particularly suitable for large-scale integration circuits and quantum detectors with present-day technology. To overcome this difficulty we consider here a flux qubit with high energy-level separation between the 'ground' and 'excited' states, consisting of a superconducting loop with two low-capacitance Josephson tunnel junctions in series. We demonstrate that for real parameters of resonant superposition between the two macroscopic states the tunneling amplitude can reach values greater than 1 K. Analytical results for the tunneling amplitude obtained within the semiclassical approximation by the instanton technique show good correlation with a numerical solution

Macroscopic Refrigeration Using Superconducting Tunnel Junctions

Science.gov (United States)

Lowell, Peter; O'Neil, Galen; Underwood, Jason; Zhang, Xiaohang; Ullom, Joel

2014-03-01

Sub-kelvin temperatures are often a prerequisite for modern scientific experiments, such as quantum information processing, astrophysical missions looking for dark energy signatures and tabletop time resolved x-ray spectroscopy. Existing methods of reaching these temperatures, such as dilution refrigerators, are bulky and costly. In order to increase the accessibility of sub-Kelvin temperatures, we have developed a new method of refrigeration using normal-metal/insulator/superconductor (NIS) tunnel junctions. NIS junctions cool the electrons in the normal metal since the hottest electrons selectively tunnel from the normal metal into the superconductor. By extending the normal metal onto a thermally isolated membrane, the cold electrons can cool the phonons through the electron-phonon coupling. When these junctions are combined with a pumped 3He system, they provide a potentially inexpensive method of reaching these temperatures. Using only three devices, each with a junction area of approximately 3,500 μm2, we have cooled a 2 cm3 Cu plate from 290 mK to 256 mK. We will present these experimental results along with recent modeling predictions that strongly suggest that further refinements will allow cooling from 300 mK to 120 mK. This work is supported by the NASA APRA program.

Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

Directory of Open Access Journals (Sweden)

Jean-Baptiste Laloë

2011-01-01

Full Text Available Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a of 39 K and two superconducting gaps, MgB2 has great promise from the fundamental point of view, as well as immediate applications. Several techniques for thin film deposition and heterojunction formation have been established, each with its own advantages and drawbacks. Here, we will present a brief overview of research based on MgB2 thin films grown by molecular beam epitaxy coevaporation of Mg and B. The films are smooth and highly crystalline, and the technique allows for virtually any heterostructure to be formed, including all-MgB2 tunnel junctions. Such devices have been characterized, with both quasiparticle and Josephson tunneling reported. MgB2 remains a material of great potential for a multitude of further characterization and exploration research projects and applications.

Transparency of atom-sized superconducting junctions

International Nuclear Information System (INIS)

Van-der-Post, N.; Peters, E.T.; Van Ruitenbeek, J.M.; Yanson, I.K.

1995-01-01

We discuss the transparency of atom-size superconducting tunnel junctions by comparing experimental values of the normal resistance and Subgap Structure with the theoretical predictions for these phenomena by Landauer's formula and Multiple Andreev Reflection, respectively

Superconducting β-ZrNClx probed by scanning-tunnelling and break-junction spectroscopy

International Nuclear Information System (INIS)

Ekino, Toshikazu; Sugimoto, Akira; Gabovich, Alexander M.; Zheng, Zhanfeng; Yamanaka, Shoji

2013-01-01

Highlights: •STM/STS combined with break-junction tunnelling spectroscopy (BJTS) on β-ZrNCl. •STM image on the ab plane shows triangular atomic lattice spots with a period of 0.36 nm. •The gap peaks are widely distributed (Δ p–p = 9–28 meV)over the area of 100 nm 2 . •Average gap ratio 2Δ/k B T c ∼ 10 is confirmed by both STS and BJTS. -- Abstract: Superconducting layered compound β-ZrNCl x (x = 0.7) with the critical temperature T c = 13–14 K was investigated by means of scanning tunnelling microscopy/spectroscopy. The single-crystal domain facet of ∼100 μm 2 in the c-axis-oriented polycrystal was used as a probing surface. The STM image at 4.9 K shows triangular atomic lattice spots with the period of ∼0.36 nm, which agrees with the X-ray diffraction measurements. The STS measurements of the local conductance, dI/dV, exhibit broadened gap structures with a substantial distribution of the gap-edge values. Most frequently observed peak-to-peak value of ∼20 mV is remarkably similar to the superconducting gap edge of the isostructural β-HfNCl x with T c = 24 K. Temperature, T, dependence of the dI/dV shows that the gap structure disappears above T c ∼ 13 K. Fitting of the dI/dV curve by the broadened BCS density of states leads to the superconducting gap of 2Δ(4.9 K) = 11–13 meV. This is in accordance with our former break-junction data confirming the intrinsic character of the previously obtained extremely large gap to T c ratio 2Δ(0)/k B T c ≈ 10 (k B is the Boltzmann constant), thereby pointing to the unusual superconducting properties of this compound

Identification of microorganisms using superconducting tunnel junctions and time-of-flight mass spectrometry

Science.gov (United States)

Ullom, J. N.; Frank, M.; Horn, J. M.; Labov, S. E.; Langry, K.; Benner, W. H.

2000-04-01

We present time-of-flight measurements of biological material ejected from bacterial spores following laser irradiation. Ion impacts are registered on a microchannel plate detector and on a Superconducting Tunnel Junction (STJ) detector. We compare mass spectra obtained with the two detectors. The STJ has better sensitivity to massive ions and also measures the energy of each ion. We show evidence that spores of different bacillus species produce distinctive mass spectra and associate the observed mass peaks with coat proteins.

Identification of microorganisms using superconducting tunnel junctions and time-of-flight mass spectrometry

International Nuclear Information System (INIS)

Ullom, J.N.; Frank, M.; Horn, J.M.; Labov, S.E.; Langry, K.; Benner, W.H.

2000-01-01

We present time-of-flight measurements of biological material ejected from bacterial spores following laser irradiation. Ion impacts are registered on a microchannel plate detector and on a Superconducting Tunnel Junction (STJ) detector. We compare mass spectra obtained with the two detectors. The STJ has better sensitivity to massive ions and also measures the energy of each ion. We show evidence that spores of different bacillus species produce distinctive mass spectra and associate the observed mass peaks with coat proteins

delta-biased Josephson tunnel junctions

DEFF Research Database (Denmark)

Monaco, R.; Mygind, Jesper; Koshelet, V.

2010-01-01

Abstract: The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect...... the persistent currents circulating in a superconducting loop. Analytical and numerical results indicate that the presence of fractional vortices leads to remarkable differences from the conventional case of uniformly distributed dc bias current. The theoretical findings are supported by detailed measurements...

Coherent Cooper pair tunneling in systems of Josephson junctions: effects of quasiparticle tunneling and of the electromagnetic environment

NARCIS (Netherlands)

Maassen van den Brink, A.; Odintsov, A.A.; Bobbert, P.A.; Schön, G.

1991-01-01

Small capacitance tunnel junctions show single electron effects and, in the superconducting state, the coherent tunneling of Cooper pairs. We study these effects in a system of two Josephson junctions, driven by a voltage source with a finite impedance. Novel features show up in theI–V

Evidence of a Normal-State Pseudogap in Bulk Superconducting Tunneling Junctions of YBa2Cu3O7-δ

Directory of Open Access Journals (Sweden)

Leandro Guerra

1999-12-01

Full Text Available Planar contact tunneling experiments have been performed on bulk superconducting tunneling junctions of YBa2Cu3O7-δ in the temperature range 77 -295K. A clear depression in the conductance curves measured, attributed to the pseudogap, has been observed in temperatures above Tc (approx. 90K determined from dc resistivity measurements before disappearing at T*=275K. The width of the pseudogap has been quantitatively measured as Dps, ave = 25.6meV from the differential conductance plots. These results agree with the current understanding of the phenomenology and nature of this pseudogap, namely: (I the pseudogap value is relatively temperature-independent; (2 the superconducting gap and the pseudogap have the same d-wave nature; and (3 the superconducting gap evolves from the pseudogap.

Nonlinearity in superconductivity and Josephson junctions

International Nuclear Information System (INIS)

Lazarides, N.

1995-01-01

Within the framework of the Bardeen, Cooper and Schrieffers (BCS) theory, the influence of anisotropy on superconducting states are investigated. Crystal anisotropy exists in un-conventional low temperature superconductors as e.g. U 1-x Th x Be 13 and in high temperature superconductors. Starting from a phenomenological pairing interaction of the electrons or holes, the BCS approach is used to derive a set of coupled nonlinear algebraic equations for the momentum dependent gap parameter. The emphasis is put on bifurcation phenomena between s-, d-wave and mixed s- and d-wave symmetry and the influence on measurable quantities as the electron specific heat, spin susceptibility and Josephson tunnelling. Pitch-fork and perturbed pitch-fork bifurcations have been found separating s- and d-wave superconducting states from mixed s- and d-wave states. The additional superconducting states give rise to jumps in the electron specific heat below the transition temperature. These jumps are rounded in the case of perturbed pitch-fork bifurcations. An experiment to measure the sign of the interlayer interaction using dc SQUIDS is suggested. The Ambegaokar-Baratoff formalism has been used for calculating the quasiparticle current and the two phase coherent tunnelling currents in a Josephson junction made of anisotropic superconductors. It is shown that anisotropy can lead to a reduction in the product of the normal resistance and the critical current. For low voltages across the junction the usual resistively shunted Josephson model can be used. Finally, bunching in long circular Josephson junctions and suppression of chaos in point junctions have been investigated. (au) 113 refs

Superconducting tunnel junctions on MgB{sub 2} using MgO and CaF{sub 2} as a barrier

Energy Technology Data Exchange (ETDEWEB)

Sakoda, Masahito, E-mail: sakoda@cc.tuat.ac.jp [Department of Applied Physics, Tokyo University of Agriculture and Technology, 2-24-16, Koganei, Tokyo 184-8588 (Japan); Aibara, Masato; Mede, Kazuya; Kikuchi, Motoyuki; Naito, Michio [Department of Applied Physics, Tokyo University of Agriculture and Technology, 2-24-16, Koganei, Tokyo 184-8588 (Japan)

2016-11-15

Highlights: • We have revised the manuscript according to reviewer's comments. The details are in “Response to Reviewers”. • Superconducting junctions with MgO and CaF{sub 2} barrier were fabricated in order to improve the quality of junctions. • In SIN junctions with MgO barrier, clear superconducting gap was observed. (). • In SIS junctions with CaF2 barrier, Josephson current was observed over 30 K. (). • The compatibility of each barrier material at the upper and lower interfaces was clarified. (). - Abstract: We report the fabrication of superconducting tunnel junctions, both of superconductor–insulator-normal metal (SIN) and superconductor–insulator-superconductor (SIS), on MgB{sub 2} using MgO and CaF{sub 2} as a barrier. The SIN junctions fabricated using an MgO barrier showed excellent quasi-particle characteristics, including a large superconducting gap (Δ) of 2.5–3 meV and a low zero-bias conductance. We have also fabricated SIS junctions with an MgO barrier, but the quasi-particle characteristics of the SIS junctions are not as good as those of the SIN junctions, namely a reduced superconducting gap and a high zero-bias conductance. It appears that top MgB{sub 2} electrodes do not grow well on an MgO barrier, which is also suggested from in-situ RHEED observation. The SIN junctions fabricated using a CaF{sub 2} barrier showed less sharp quasi-particle characteristics than using an MgO barrier. However, the SIS junctions using a CaF{sub 2} barrier showed a fairly large I{sub c}R{sub N} value at 4.2 K over 1 mV and also exhibited finite Josephson current up to almost the film's T{sub c} (∼30 K). The RHEED observation revealed that top MgB{sub 2} electrodes grow well on a CaF{sub 2} barrier.

Quantum-limited detection of millimeter waves using superconducting tunnel junctions

International Nuclear Information System (INIS)

Mears, C.A.

1991-09-01

The quasiparticle tunneling current in a superconductor-insulator- superconductor (SIS) tunnel junction is highly nonlinear. Such a nonlinearity can be used to mix two millimeter wave signals to produce a signal at a much lower intermediate frequency. We have constructed several millimeter and sub-millimeter wave SIS mixers in order to study high frequency response of the quasiparticle tunneling current and the physics of high frequency mixing. We have made the first measurement of the out-of-phase tunneling currents in an SIS tunnel junction. We have developed a method that allows us to determine the parameters of the high frequency embedding circuit by studying the details of the pumped I-V curve. We have constructed a 80--110 GHz waveguide-based mixer test apparatus that allows us to accurately measure the gain and added noise of the SIS mixer under test. Using extremely high quality tunnel junctions, we have measured an added mixer noise of 0.61 ± 0.36 quanta, which is within 25 percent of the quantum limit imposed by the Heisenberg uncertainty principle. This measured performance is in excellent agreement with that predicted by Tucker's theory of quantum mixing. We have also studied quasioptically coupled millimeter- and submillimeter-wave mixers using several types of integrated tuning elements. 83 refs

Photon-assisted Tunneling In Double-barrier Superconducting Tunnel-junctions

NARCIS (Netherlands)

Dierichs, M. M. T. M.; Dieleman, P.; Wezelman, J. J.; Honingh, C. E.; Klapwijk, T. M.

1994-01-01

Double-barrier Nb/Al2O3/Al/Al2O3/Nb tunnel junctions are used as mixing elements in a 345 GHz waveguide mixer. Noise temperatures (double side band) down to 720 K at 3.0 K are obtained without the need to apply a magnetic field to suppress the Josephson current. It is shown that the composite

A 36-pixel superconducting tunnel junction soft X-ray detector for environmental science applications

International Nuclear Information System (INIS)

Friedrich, Stephan; Drury, Owen B.; Cramer, Stephen P.; Green, Peter G.

2006-01-01

We are operating a superconducting tunnel junction detector for high-resolution soft X-ray spectroscopy at the Advanced Biological and Environmental X-ray Facility at the Advanced Light Source synchrotron. We have recently upgraded the instrument from 9 to 36 pixels for increased sensitivity. We have also acquired a new digital signal readout to increase the total count rate capabilities to ∼10 6 counts/s while maintaining a high peak-to-background ratio. We report on the performance of the spectrometer, and discuss speciation measurements of chromium in welding aerosols as a typical application of the instrument in environmental science

A 36-pixel superconducting tunnel junction soft X-ray detector for environmental science applications

Energy Technology Data Exchange (ETDEWEB)

Friedrich, Stephan [Lawrence Livermore National Laboratory, Advanced Detector Group, 7000 East Avenue, L-270, Livermore, CA 94550 (United States) and Lawrence Berkeley National Laboratory, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, Berkeley, CA 94720 (United States)]. E-mail: friedrich1@llnl.gov; Drury, Owen B. [Lawrence Livermore National Laboratory, Advanced Detector Group, 7000 East Avenue, L-270, Livermore, CA 94550 (United States); Lawrence Berkeley National Laboratory, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Cramer, Stephen P. [Lawrence Berkeley National Laboratory, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, Berkeley, CA 94720 (United States); Green, Peter G. [University of California Davis, Department of Civil and Environmental Engineering, 1 Shields Avenue, Davis, CA 95616 (United States)

2006-04-15

We are operating a superconducting tunnel junction detector for high-resolution soft X-ray spectroscopy at the Advanced Biological and Environmental X-ray Facility at the Advanced Light Source synchrotron. We have recently upgraded the instrument from 9 to 36 pixels for increased sensitivity. We have also acquired a new digital signal readout to increase the total count rate capabilities to {approx}10{sup 6} counts/s while maintaining a high peak-to-background ratio. We report on the performance of the spectrometer, and discuss speciation measurements of chromium in welding aerosols as a typical application of the instrument in environmental science.

Josephson tunnel junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Weides, M.P.

2006-01-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Josephson tunnel junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Weides, M.P.

2006-07-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

NIS tunnel junction as an x-ray photon sensor

Science.gov (United States)

Azgui, Fatma; Mears, Carl A.; Labov, Simon E.; Frank, Matthias A.; Sadoulet, Bernard; Brunet, E.; Hiller, Lawrence J.; Lindeman, Mark A.; Netel, Harrie

1995-09-01

This work presents the first results of our development of normal-insulating-superconducting tunnel junctions used as energy dispersive detectors for low energy particles. The device described here is a Ag/Al(subscript 2)O(subscript 3)/Al tunnel junction of area 1.5 multiplied by 10(superscript 4) micrometer squared with thicknesses of 200 nm for the normal Ag strip and 100 nm for the superconducting Al film. Two different high-speed SQUID systems manufactured by quantum magnetics and HYPRES, respectively, were used for the readout of this device. At 80 mK bath temperature we obtained an energy resolution DeltaE(subscript FWHM) equals 250 eV for 5.89 keV x rays absorbed directly in the normal metal. This energy resolution appears to be limited in large part by the observed strong position dependence of the device response.

A15 Nb-Sn tunnel junction fabrication and properties

International Nuclear Information System (INIS)

Rudman, D.A.; Hellman, F.; Hammond, R.H.; Beasley, M.R.

1984-01-01

We have investigated the deposition conditions necessary to produce optimized films of A15 Nb-Sn (19--26 at. % Sn) by electron-beam codeposition. Reliable high-quality superconducting tunnel junctions can be made on this material by using an oxidized-amorphous silicon overlayer as the tunneling barrier and lead as the counter-electrode. These junctions have been used both as a tool for materials diagnosis and as a probe of the superconducting properties (critical temperature and gap) of the films. Careful control of the substrate temperature during the growth of the films has proved critical to obtain homogeneous samples. When the substrate temperature is properly stabilized, stoichiometric Nb 3 Sn is found to be relatively insensitive to the deposition temperature and conditions. In contrast, the properties of the off-stoichiometry (Sn-poor) material depend strongly on the deposition temperature. For this Sn-poor material the ratio 2Δ/kT/sub c/ at a given composition increases with increasing deposition temperature. This change appears to be due to an increase in the gap at the surface of the material (as measured by tunneling) relative to the critical temperature of the bulk. All the tunnel junctions exhibit some persistent nonidealities in their current-voltage characteristics that are qualitatively insensitive to composition or deposition conditions. In particular, the junctions show excess conduction below the sum of the energy gaps (with onset at the counter-electrode gap) and a broadened current rise at the sum gap. The detailed origins of these problems are not yet understood

Nature of inhomogeneous states in superconducting junctions

International Nuclear Information System (INIS)

Ivlev, B.I.; Kopnin, N.B.

1982-01-01

A superconducting structure which arises in a superconducting film under a strong injection of a current through a tunnel junction is considered. If the current density in the film exceeds the critical Ginzburg-Landau value, an inhomogeneous resistive state with phase-slip centers can arise in it. This state is charcterized by the presence of regions with different chemical potentials of the Cooper pairs. These shifts of the pair chemical potential and the nonuniform structure of the order parameter may account for the so-called multigap states which have been observed experimentally

Tunneling conductance oscillations in spin-orbit coupled metal-insulator-superconductor junctions

Science.gov (United States)

Kapri, Priyadarshini; Basu, Saurabh

2018-01-01

The tunneling conductance for a device consisting of a metal-insulator-superconductor (MIS) junction is studied in presence of Rashba spin-orbit coupling (RSOC) via an extended Blonder-Tinkham-Klapwijk formalism. We find that the tunneling conductance as a function of an effective barrier potential that defines the insulating layer and lies intermediate to the metallic and superconducting electrodes, displays an oscillatory behavior. The tunneling conductance shows high sensitivity to the RSOC for certain ranges of this potential, while it is insensitive to the RSOC for others. Additionally, when the period of oscillations is an odd multiple of a certain value of the effective potential, the conductance spectrum as a function of the biasing energy demonstrates a contrasting trend with RSOC, compared to when it is not an odd multiple. The explanations for the observation can be found in terms of a competition between the normal and Andreev reflections. Similar oscillatory behavior of the conductance spectrum is also seen for other superconducting pairing symmetries, thereby emphasizing that the insulating layer plays a decisive role in the conductance oscillations of a MIS junction. For a tunable Rashba coupling, the current flowing through the junction can be controlled with precision.

Investigating superconductivity by tunneling spectroscopy using oxide heterostructures

Energy Technology Data Exchange (ETDEWEB)

Fillis-Tsirakis, Evangelos

2017-06-19

Electronic systems which are as highly-functional as the LaAlO{sub 3}/SrTiO{sub 3} interface are rare, as the emergent high-mobility two-dimensional electron system (2DES) exhibits ferromagnetism, incipient ferroelectricity, piezoelectricity, Rashba spin-orbit coupling, superconductivity and high electronic correlations; properties that may also coexist with one another. The possibility of tuning its electrical properties by external parameters such as a gate-field, temperature, pressure and magnetic-field makes the LaAlO{sub 3}/SrTiO{sub 3}-2DES the scientific analogue of a multi-tool. LaAlO{sub 3}/SrTiO{sub 3} samples were grown by pulsed-laser-deposition. Using this system, planar tunnel junctions were constructed that allowed for tunneling spectroscopy measurements. The resemblance of the LaAlO{sub 3}/SrTiO{sub 3} 2DES to the high-temperature superconductors undoubtedly adds value to the findings of this work. Further investigation of its nature has revealed that by depleting from the optimally doped region, the electron-phonon coupling strength increases and accounts for the persisting superconducting behavior within the macroscopically resistive regime at very low doping. Transport measurements at T = 50 mK were performed while tuning the carrier concentration and sweeping magnetic fields in the perpendicular-to-interface orientation, to investigate the superconductor-to-insulator transition by carrier depletion. The transition in LaAlO{sub 3}/SrTiO{sub 3}, induced by tuning the carrier concentration, has thus been characterized as a superconductor-metal-insulator transition (SMIT). One aim of these measurements was to investigate the possible existence of the ''superinsulator'' phase, identified by several authors in thin metallic films. Such a phase has not been observed during transport measurements at the LaAlO{sub 3}/SrTiO{sub 3} 2DES. The nature of superconductivity in the entire phase diagram and particularly across the SMIT has

Investigating superconductivity by tunneling spectroscopy using oxide heterostructures

International Nuclear Information System (INIS)

Fillis-Tsirakis, Evangelos

2017-01-01

Electronic systems which are as highly-functional as the LaAlO 3 /SrTiO 3 interface are rare, as the emergent high-mobility two-dimensional electron system (2DES) exhibits ferromagnetism, incipient ferroelectricity, piezoelectricity, Rashba spin-orbit coupling, superconductivity and high electronic correlations; properties that may also coexist with one another. The possibility of tuning its electrical properties by external parameters such as a gate-field, temperature, pressure and magnetic-field makes the LaAlO 3 /SrTiO 3 -2DES the scientific analogue of a multi-tool. LaAlO 3 /SrTiO 3 samples were grown by pulsed-laser-deposition. Using this system, planar tunnel junctions were constructed that allowed for tunneling spectroscopy measurements. The resemblance of the LaAlO 3 /SrTiO 3 2DES to the high-temperature superconductors undoubtedly adds value to the findings of this work. Further investigation of its nature has revealed that by depleting from the optimally doped region, the electron-phonon coupling strength increases and accounts for the persisting superconducting behavior within the macroscopically resistive regime at very low doping. Transport measurements at T = 50 mK were performed while tuning the carrier concentration and sweeping magnetic fields in the perpendicular-to-interface orientation, to investigate the superconductor-to-insulator transition by carrier depletion. The transition in LaAlO 3 /SrTiO 3 , induced by tuning the carrier concentration, has thus been characterized as a superconductor-metal-insulator transition (SMIT). One aim of these measurements was to investigate the possible existence of the ''superinsulator'' phase, identified by several authors in thin metallic films. Such a phase has not been observed during transport measurements at the LaAlO 3 /SrTiO 3 2DES. The nature of superconductivity in the entire phase diagram and particularly across the SMIT has been investigated by magnetic-field-dependent tunneling

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-04-01

Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

Terahertz time domain interferometry of a SIS tunnel junction and a quantum point contact

Energy Technology Data Exchange (ETDEWEB)

Karadi, Chandu [Univ. of California, Berkeley, CA (United States). Dept. of Physics

1995-09-01

The author has applied the Terahertz Time Domain Interferometric (THz-TDI) technique to probe the ultrafast dynamic response of a Superconducting-Insulating-Superconducting (SIS) tunnel junction and a Quantum Point Contact (QPC). The THz-TDI technique involves monitoring changes in the dc current induced by interfering two picosecond electrical pulses on the junction as a function of time delay between them. Measurements of the response of the Nb/AlO_xNb SIS tunnel junction from 75--200 GHz are in full agreement with the linear theory for photon-assisted tunneling. Likewise, measurements of the induced current in a QPC as a function of source-drain voltage, gate voltage, frequency, and magnetic field also show strong evidence for photon-assisted transport. These experiments together demonstrate the general applicability of the THz-TDI technique to the characterization of the dynamic response of any micron or nanometer scale device that exhibits a non-linear I-V characteristic.

Terahertz time domain interferometry of a SIS tunnel junction and a quantum point contact

International Nuclear Information System (INIS)

Karadi, C.; Lawrence Berkeley Lab., CA

1995-09-01

The author has applied the Terahertz Time Domain Interferometric (THz-TDI) technique to probe the ultrafast dynamic response of a Superconducting-Insulating-Superconducting (SIS) tunnel junction and a Quantum Point Contact (QPC). The THz-TDI technique involves monitoring changes in the dc current induced by interfering two picosecond electrical pulses on the junction as a function of time delay between them. Measurements of the response of the Nb/AlO x /Nb SIS tunnel junction from 75--200 GHz are in full agreement with the linear theory for photon-assisted tunneling. Likewise, measurements of the induced current in a QPC as a function of source-drain voltage, gate voltage, frequency, and magnetic field also show strong evidence for photon-assisted transport. These experiments together demonstrate the general applicability of the THz-TDI technique to the characterization of the dynamic response of any micron or nanometer scale device that exhibits a non-linear I-V characteristic. 133 refs., 49 figs

Extended Majorana zero modes in a topological superconducting-normal T-junction

Science.gov (United States)

Spånslätt, Christian; Ardonne, Eddy

2017-03-01

We investigate the sub gap properties of a three terminal Josephson T-junction composed of topologically superconducting wires connected by a normal metal region. This system naturally hosts zero energy Andreev bound states which are of self-conjugate Majorana nature and we show that they are, in contrast to ordinary Majorana zero modes, spatially extended in the normal metal region. If the T-junction respects time-reversal symmetry, we show that a zero mode is distributed only in two out of three arms in the junction and tuning the superconducting phases allows for transfer of the mode between the junction arms. We further provide tunneling conductance calculations showing that these features can be detected in experiments. Our findings suggest an experimental platform for studying the nature of spatially extended Majorana zero modes.

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

2011-01-01

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.

Josephson tunnel junction microwave attenuator

DEFF Research Database (Denmark)

Koshelets, V. P.; Shitov, S. V.; Shchukin, A. V.

1993-01-01

A new element for superconducting electronic circuitry-a variable attenuator-has been proposed, designed, and successfully tested. The principle of operation is based on the change in the microwave impedance of a superconductor-insulator-superconductor (SIS) Josephson tunnel junction when dc biased...... at different points in the current-voltage characteristic. Both numerical calculations based on the Tien-Gordon theory and 70-GHz microwave experiments have confirmed the wide dynamic range (more than 15-dB attenuation for one stage) and the low insertion loss in the ''open'' state. The performance of a fully...

Two-dimensional macroscopic quantum tunneling in multi-gap superconductor Josephson junctions

International Nuclear Information System (INIS)

Asai, Hidehiro; Kawabata, Shiro; Ota, Yukihiro; Machida, Masahiko

2014-01-01

Low-temperature characters of superconducting devices yield definite probes for different superconducting phenomena. We study the macroscopic quantum tunneling (MQT) in a Josephson junction, composed of a single-gap superconductor and a two-gap superconductor. Since this junction has two kinds to the superconducting phase differences, calculating the MQT escape rate requires the analysis of quantum tunneling in a multi-dimensional configuration space. Our approach is the semi-classical approximation along a 1D curve in a 2D potential- energy landscape, connecting two adjacent potential (local) minimums through a saddle point. We find that this system has two plausible tunneling paths; an in-phase path and an out-of-phase path. The former is characterized by the Josephson-plasma frequency, whereas the latter is by the frequency of the characteristic collective mode in a two-band superconductor, Josephson- Leggett mode. Depending on external bias current and inter-band Josephson-coupling energy, one of them mainly contributes to the MQT. Our numerical calculations show that the difference between the in-phase path and the out-of-phase path is manifest, with respect to the bias- current-dependence of the MQT escape rate. This result suggests that our MQT setting be an indicator of the Josephson-Leggett mode

Spectroscopy of bulk and few-layer superconducting NbSe2 with van der Waals tunnel junctions.

Science.gov (United States)

Dvir, T; Massee, F; Attias, L; Khodas, M; Aprili, M; Quay, C H L; Steinberg, H

2018-02-09

Tunnel junctions, an established platform for high resolution spectroscopy of superconductors, require defect-free insulating barriers; however, oxides, the most common barrier, can only grow on a limited selection of materials. We show that van der Waals tunnel barriers, fabricated by exfoliation and transfer of layered semiconductors, sustain stable currents with strong suppression of sub-gap tunneling. This allows us to measure the spectra of bulk (20 nm) and ultrathin (3- and 4-layer) NbSe 2 devices at 70 mK. These exhibit two distinct superconducting gaps, the larger of which decreases monotonically with thickness and critical temperature. The spectra are analyzed using a two-band model incorporating depairing. In the bulk, the smaller gap exhibits strong depairing in in-plane magnetic fields, consistent with high out-of-plane Fermi velocity. In the few-layer devices, the large gap exhibits negligible depairing, consistent with out-of-plane spin locking due to Ising spin-orbit coupling. In the 3-layer device, the large gap persists beyond the Pauli limit.

Nb/NiCu bilayers in single and stacked superconductive tunnel junctions: preliminary results

International Nuclear Information System (INIS)

Pepe, G.P.; Ruotolo, A.; Parlato, L.; Peluso, G.; Ausanio, G.; Carapella, G.; Latempa, R.

2004-01-01

We present preliminary experimental results concerning both single and stacked tunnel junctions in which one of the electrodes was formed by a superconductor/ferromagnet (S/F) bi-layer. In particular, in the stacked configuration a Nb/NiCu bi-layer was used as the intermediate electrode, and it was probed by tunneling on both sides. Tunnel junctions have been characterized in terms of current-voltage characteristics (IVC), and differential conductance. Preliminary steady-state injection-detection measurements performed in the stacked devices at T=4.2 K are also presented and discussed

Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

International Nuclear Information System (INIS)

Cleland, A.N.

1991-01-01

Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

Effect of single Abrikosov vortices on the properties of Josephson tunnel junctions

International Nuclear Information System (INIS)

Golubov, A.A.; Kupriyanov, M.Yu.

1987-01-01

The effect of single Abrikosov vortices, trapped in the electrodes of a Josephson tunnel junction perpendicularly to the junction surface, on the tunnel current through the junction is studied within the framework of the microscopic theory. The current-voltage characteristic and the critical junction current I c are calculated for temperatures 0 c . It is shown that if the vortices at the junction are misaligned, singularities on the current-voltage characteristic appear at eV Δ (T), and in some cases the magnitude of suppression of I c may be of the order of magnitude of I c itself. The temperature dependence of the critical current is calculated for the case of one of the electrodes being a two-dimensional superconducting film in which the creation of opposite sign vortex pairs is significant

Two-dimensional simulations of the superconducting proximity in superconductor-semiconductor junctions

Science.gov (United States)

Chua, Victor; Vissers, Michael; Law, Stephanie A.; Vishveshwara, Smitha; Eckstein, James N.

2015-03-01

We simulate the consequences of the superconducting proximity effect on the DC current response of a semiconductor-superconductor proximity device within the quasiclassical formalism in the diffusively disordered limit. The device is modeled on in-situ fabricated NS junctions of superconducting Nb films on metallic doped InAs films, with electrical terminals placed in an N-S-N T-junction configuration. Due to the non-collinear configuration of this three terminal device, a theoretical model based on coupled two dimensional spectral and distributional Usadel equations was constructed and numerically solved using Finite-Elements methods. In the regime of high junction conductance, our numerical results demonstrate strong temperature and spatial dependencies of the proximity induced modifications to spectral and transport properties. Such characteristics deviate strongly from usual tunnel junction behavior and aspects of this have been observed in prior experiments[arXiv:1402.6055].

Properties of a tunnel point contact between aluminum and the superconducting amorphous alloy NiZr2

International Nuclear Information System (INIS)

Gantmakher, V.F.; Golubov, A.A.; Osherov, M.V.

1989-01-01

The I-V characteristics of a tunnel point contact between aluminum and an amorphous ribbon resembling NiZr 2 in composition differ qualitatively from those of ordinary tunnel junctions between a superconductor and a normal metal. It is demonstrated that the observed curve shapes cannot be explained by accounting solely for one-particle tunneling in conditions of the proximity effect. This is followed by a qualitative discussion of a model in which the current rise at the potential eV equal to the gap width Δ (T) is generated by two-particle electron tunneling through the intermediate state which is manifested as a Cooper pair on the Fermi-level in the thin superconducting layer produced in the aluminum by the proximity effect. The current flowing through the contact will cause a breakdown of superconductivity in the vicinity of the contact at voltages exceeding the gap width. Smallness of the junction plays a decisive role both in inducing superconductivity for eV Δ

Four-junction superconducting circuit

Science.gov (United States)

Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

2016-01-01

We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

Long Josephson tunnel junctions with doubly connected electrodes

DEFF Research Database (Denmark)

Monaco, R.; Mygind, J.; Koshelets, V. P.

2012-01-01

of such experiments, the number of magnetic flux quanta spontaneously trapped in a superconducting loop was measured by means of a long Josephson tunnel junction built on top of the loop itself. We have analyzed this system and found a number of interesting features not occurring in the conventional case with simply...... connected electrodes. In particular, the fluxoid quantization results in a frustration of the Josephson phase, which, in turn, reduces the junction critical current. Further, the possible stable states of the system are obtained by a self-consistent application of the principle of minimum energy...

An x-ray detector using superconducting aluminum tunnel junctions

International Nuclear Information System (INIS)

Barber, W.C.; Bland, R.W.; Carpenter, J.W.; Johnson, R.T.; Laws, K.E.; Lockhart, J.; Lee, J.S.; Watson, R.M.

1992-01-01

We report on tests of a prototype detector for 6-keV X-rays, using series arrays of tunnel junction. Tests with higher-energy particles indicate an energy resolution of 4 keV, at 0.3K and with a warm pre-amp. At lower temperatures and with a cooled FET, the resolution should approach 100 eV

Macroscopic quantum tunneling in 1 μm Nb junctions below 100mK

International Nuclear Information System (INIS)

Voss, R.F.; Webb, R.A.

1981-01-01

The transition probabilities out of the superconducting state of low current density 1 μm Nb Josephson junctions with capacitance < 0.15 pF have been measured as a function of temperature T down to 3 mK. Below 100 mK the distribution widths become independent of T. Junctions with critical currents that differ by an order of magnitude have the same dependence of relative width on T. The low T results are interpreted in terms of quantum tunneling of the (macroscopic) junction phase. The observed low temperature widths are smaller than expected indicating the necessity of corrections to the simple WKB tunneling rates. (orig.)

Inter-band phase fluctuations in macroscopic quantum tunneling of multi-gap superconducting Josephson junctions

Energy Technology Data Exchange (ETDEWEB)

Asai, Hidehiro, E-mail: hd-asai@aist.go.jp [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ota, Yukihiro [CCSE, Japan Atomic Energy Agency, Kashiwa, Chiba 277-8587 (Japan); Kawabata, Shiro [Electronics and Photonics Research Institute (ESPRIT), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Nori, Franco [CEMS, RIKEN, Wako-shi, Saitama 351-0198 (Japan); Physics Department, University of Michigan, Ann Arbor, MI 48109-1040 (United States)

2014-09-15

Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate.

Inter-band phase fluctuations in macroscopic quantum tunneling of multi-gap superconducting Josephson junctions

International Nuclear Information System (INIS)

Asai, Hidehiro; Ota, Yukihiro; Kawabata, Shiro; Nori, Franco

2014-01-01

Highlights: • We study MQT in Josephson junctions composed of multi-gap superconductors. • We derive a formula of the MQT escape rate for multiple phase differences. • We investigate the effect of inter-band phase fluctuation on MQT. • The MQT escape rate is significantly enhanced by the inter-band phase fluctuation. - Abstract: We theoretically investigate macroscopic quantum tunneling (MQT) in a hetero Josephson junction formed by a conventional single-gap superconductor and a multi-gap superconductor. In such Josephson junctions, phase differences for each tunneling channel are defined, and the fluctuation of the relative phase differences appear which is referred to as Josephson–Leggett’s mode. We take into account the effect of the fluctuation in the tunneling process and calculate the MQT escape rate for various junction parameters. We show that the fluctuation of relative phase differences drastically enhances the escape rate

A Superconducting Tunnel Junction X-ray Spectrometer without Liquid Cryogens

International Nuclear Information System (INIS)

Friedrich, S.; Hertrich, T.; Drury, O.B.; Cherepy, N.J.; Hohne, J.

2008-01-01

Superconducting tunnel junctions (STJs) are being developed as X-ray detectors because they combine the high energy resolution of cryogenic detector technologies with the high count rate capabilities of athermal devices. We have built STJ spectrometers for chemical analysis of dilute samples by high-resolution soft X-ray spectroscopy at the synchrotron. The instruments use 36 pixels of 200 (micro)m x 200 (micro)m Nb-Al-AlOx-Al-Nb STJs with 165 nm thick Nb absorber films. They have achieved an energy resolution of ∼10-20 eV FWHM for X-ray energies below 1 keV, and can be operated at a total count rate of ∼10 6 counts/s. For increased user-friendliness, we have built a liquid-cryogen-free refrigerator based on a two-stage pulse tube cryocooler in combination with a two-stage adiabatic demagnetization stage. It holds the STJ detector at the end of a 40-cm-long cold finger, and attains the required operating temperature of ∼0.3 K at the push of a button. We describe the instrument performance and present speciation measurements on Eu dopant activators in the novel scintillator material SrI 2 to illustrate the potential for STJ spectrometers at the synchrotron

Humidity dependence of molecular tunnel junctions with an AlOx/COOH- interface

Science.gov (United States)

Zhang, Xiaohang; McGill, Stephen; Xiong, Peng

2006-03-01

We have studied the electron transport in planar tunneling junctions with aluminum oxide and an organic self-assembled monolayer (SAM) as the tunnel barrier. The structure of the junctions is Al/AlOx/SAM/(Au, Pb) with a junction area of ˜ 0.4mm^2. The organic molecules investigated include mercaptohexadecanoic acid (MHA), hexadecanoic acid (HDA), and octadecyltrichlorosilane (OTS); all of which form ordered SAMs on top of aluminum oxide. The use of a superconducting electrode (Al) enables us to determine unambiguously that these are high-quality tunnel junctions. For junctions incorporating MHA, the transport behavior is found to be strongly humidity dependent. The resistance of these junctions drops more than 50% when placed in dry nitrogen and recovers when returned into the ambient. The same drop also occurs when the sample is placed into a vacuum, and backfilling the vacuum with either dry N2 or O2 has negligible effect on the resistance. For comparison, junctions with HDA show the same humidity dependence, while OTS samples do not. Since both MHA and HDA have carboxylic groups and OTS does not, the results suggest that water molecules at the AlOx/COOH- interface play the central role in the observed behavior. Inelastic tunneling spectroscopy (IETS) has also been performed to understand the role of water. This work was supported by a FSU Research Foundation PEG grant.

Development of Ta-based Superconducting Tunnel Junction X-ray Detectors for Fluorescence XAS

International Nuclear Information System (INIS)

Friedrich, S.; Drury, O.; Hall, J.; Cantor, R.

2009-01-01

We are developing superconducting tunnel junction (STJ) soft X-ray detectors for chemical analysis of dilute samples by fluorescence-detected X-ray absorption spectroscopy (XAS). Our 36-pixel Nb-based STJ spectrometer covers a solid angle (Omega)/4π ∼ 10 -3 , offers an energy resolution of ∼10-20 eV FWHM for energies up to ∼1 keV, and can be operated at total count rates of ∼10 6 counts/s. For increased quantum efficiency and cleaner response function, we have now started the development of Ta-based STJ detector arrays. Initial devices modeled after our Nb-based STJs have an energy resolution below 10 eV FWHM for X-ray energies below 1 keV, and pulse rise time discrimination can be used to improve their response function for energies up to several keV. We discuss the performance of the Ta-STJs and outline steps towards the next-generation of large STJ detector arrays with higher sensitivity.

Development of superconducting tunnel junction as photon counting detector in astronomy; Developpement de jonctions supraconductrices a effet tunnel pour le comptage de photons en astronomie

Energy Technology Data Exchange (ETDEWEB)

Jorel, C

2004-12-15

This work describes the development of S/Al-AlOx-Al/S Superconducting Tunnel Junctions (STJ) to count photons for astronomical applications in the near-infrared. The incoming light energy is converted into excited charges in a superconducting layer (S, either Nb or Ta) with a population proportional to the deposited energy. The photon energy can thus be evaluated by integrating the tunnel current induced in a voltage biased junction at a very low temperature (100 mK). The performance of STJ for light detection is discussed in the first chapter and compared with the best performances obtained with other techniques based on either superconductors. At the beginning of the thesis, a previous manufacturing process made it possible to obtain good quality Nb based junctions and preliminary results for photon counting. The objective of the thesis was to replace Nb as absorber with Ta, an intrinsically more sensitive material, and secondly to develop a new and more efficient manufacturing process. We first focused on the optimization of the Tantalum thin film quality. Structural analysis showed that these films can be grown epitaxially by magnetron sputtering onto an R-plane sapphire substrate heated to 600 Celsius degrees and covered by a thin Nb buffer layer. Electrical transport measurement from room to low temperatures gave excellent Relative Resistive Ratios of about 50 corresponding to mean free path of the order of 100 nm. Then, we conceived an original manufacturing process batch on 3 inch diameter sapphire substrate with five mask levels. These masks made it possible to produce single pixel STJ of different sizes (from 25*25 to 50*50 square microns) and shapes. We also produced multiple junctions onto a common absorber as well as 9-pixel arrays. Thanks to the development of this process we obtained a very large percentage of quality junctions (>90%) with excellent measured normal resistances of a few micro-ohm cm{sup 2} and low leakage currents of the order of one

Binary circuitry including switching elements utilizing superconductive tunneling effects

International Nuclear Information System (INIS)

Baechtold, W.; Gueret, P.L.

1976-01-01

Two Josephson gates are connected in series to a low impedance voltage source. Each junction is bridged by a load impedance. The feed voltage is maintained in the order of the gap voltage which correponds to the voltage drop across a Josephson junction when it is in its single-particle-tunneling state. Therefore, only one out of both Josephson elements can exist in the voltage state at a time, and the other junction is forced to assume the superconducting pair-tunneling state. In its symmetric form, the basic circuit can be used as flip-flop or storage means. If asymmetric, the basic circuit shows monostable switching behavior, and it can be used as logic gate. Circuit asymmetry can be caused either by design using different junction areas or electrically by proper bias control currents applied to either or both gates of the basic circuit. The degree of symmetry or asymmetry can even be shifted with electrical means. AND and OR gates and inverting embodiments which perform logic NAND and NOR functions are shown

Gap anisotropy and tunneling currents. [MPS3

DEFF Research Database (Denmark)

Lazarides, N.; Sørensen, Mads Peter

1996-01-01

The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to......The tunneling Hamiltonian formalism is applied to calculate the tunnelingcurrents through a small superconducting tunnel junction. The formalism isextended to nonconstant tunneling matrix elements. The electrodes of thejunction are assumed to...

Fluctuation Dominated Josephson Tunneling with a Scanning Tunneling Microscope

International Nuclear Information System (INIS)

Naaman, O.; Teizer, W.; Dynes, R. C.

2001-01-01

We demonstrate Josephson tunneling in vacuum tunnel junctions formed between a superconducting scanning tunneling microscope tip and a Pb film, for junction resistances in the range 50--300 k Omega. We show that the superconducting phase dynamics is dominated by thermal fluctuations, and that the Josephson current appears as a peak centered at small finite voltage. In the presence of microwave fields (f=15.0 GHz) the peak decreases in magnitude and shifts to higher voltages with increasing rf power, in agreement with theory

Dynamics of a nanoscale Josephson junction probed by scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Ast, Christian R.; Jaeck, Berthold; Eltschka, Matthias; Etzkorn, Markus [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Kern, Klaus [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Institut de Physique de la Matiere Condensee, EPFL, Lausanne (Switzerland)

2015-07-01

The Josephson effect is an intriguing phenomenon as it presents an interplay of different energy scales, such as the Josephson energy ε{sub J} (critical current), charging energy ε{sub C}, and temperature T. Using a scanning tunneling microscope (STM) operating at a base temperature of 15 mK, we create a nanoscale superconductor-vacuum-superconductor tunnel junction in an extremely underdamped regime (Q>>10). We observe extremely small retrapping currents also owing to strongly reduced ohmic losses in the well-developed superconducting gaps. While formally operating in the zero temperature limit, i.e. the temperature T is smaller than the Josephson plasma frequency ω{sub J} (k{sub B}T<<ℎω{sub J}=√(8ε{sub J}ε{sub C})), experimentally other phenomena, such as stray photons, may perturb the Josephson junction, leading to an effectively higher temperature. The dynamics of the Josephson junction can be addressed experimentally by looking at characteristic parameters, such as the switching current and the retrapping current. We discuss the dynamics of the Josephson junction in the context of reaching the zero temperature limit.

Molecular series-tunneling junctions.

Science.gov (United States)

Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

2015-05-13

Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

Q factor and resonance amplitude of Josephson tunnel junctions

International Nuclear Information System (INIS)

Broom, R.F.; Wolf, P.

1977-01-01

The surface impedance of the superconducting films comprising the electrodes of Josephson tunnel junctions has been derived from the BCS theory in the extreme London limit. Expressions have been obtained for (i) the dependence of the penetration depth lambda on frequency and temperature, and (ii) the quality factor Q of the junction cavity, attributable to surface absorption in the electrodes. The effect of thin electrodes (t 9 or approx. = lambda) is also included in the calculations. Comparison of the calculated frequency dependence of lambda with resonance measurements on Pb-alloy and all-Nb tunnel junctions yields quite good agreement, indicating that the assumptions made in the theory are reasonable. Measurements of the (current) amplitude of the resonance peaks of the junctions have been compared with the values obtained from inclusion of the calculated Q in the theory by Kulik. In common with observations on microwave cavities by other workers, we find that a small residual conductivity must be added to the real part of the BCS value. With its inclusion, good agreement is found between calculation and experiment, within the range determined by the simplifying assumptions of Kulik's theory. From the results, we believe the calculation of Q to be reasonably accurate for the materials investigated. It is shown that the resonance amplitude of Josephson junctions can be calculated directly from the material constants and a knowledge of the residual conductivity

Effect of the critical current density and the junction size on the leakage current of Nb/Al-AlOx/Nb superconducting tunnel junctions for radiation detection

International Nuclear Information System (INIS)

Joosse, K.; Nakagawa, Hiroshi; Akoh, Hiroshi; Takada, Susumu; Maehata, Keisuke; Ishibashi, Kenji.

1996-01-01

Nb/Al-AlO x /Nb superconducting tunnel junctions (STJ's) designed for X-ray detection have been fabricated. The behavior of the low-temperature subgap leakage current, which severely limits the energy resolution obtained in such devices, is investigated. From trends in the dependence of the leakage currents on the critical current density and the size of the STJ, as well as from the low-temperature current-voltage characteristics, and an analysis of the base electrode surface morphology, it is concluded that physical defects in the barrier region are the most probable cause of the leakage currents. Suggestions are given for optimization of the device processing. (author)

Electronic thermometry in tunable tunnel junction

Science.gov (United States)

Maksymovych, Petro

2016-03-15

A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

Current noise in tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

2017-06-15

We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Spin nutation effects in molecular nanomagnet–superconductor tunnel junctions

International Nuclear Information System (INIS)

Abouie, J; Abdollahipour, B; Rostami, A A

2013-01-01

We study the spin nutation effects of a molecular nanomagnet on the Josephson current through a superconductor|molecular nanomagnet|superconductor tunnel junction. We explicitly demonstrate that, due to the spin nutation of the molecular nanomagnet, two oscillatory terms emerge in the ac Josephson current in addition to the conventional ac Josephson current. Some resonances occur in the junction due to the interactions of the transported quasiparticles with the bias voltage and molecular nanomagnet spin dynamics. Their appearance indicates that the energy exchanged during these interactions is in the range of the superconducting energy gap. We also show that the spin nutation is able to convert the ac Josephson current to a dc current, which is interesting for applications. (paper)

The role of engineered materials in superconducting tunnel junction X-ray detectors - Suppression of quasiparticle recombination losses via a phononic band gap

Science.gov (United States)

Rippert, Edward D.; Ketterson, John B.; Chen, Jun; Song, Shenian; Lomatch, Susanne; Maglic, Stevan R.; Thomas, Christopher; Cheida, M. A.; Ulmer, Melville P.

1992-01-01

An engineered structure is proposed that can alleviate quasi-particle recombination losses via the existence of a phononic band gap that overlaps the 2-Delta energy of phonons produced during recombination of quasi-particles. Attention is given to a 1D Kronig-Penny model for phonons normally incident to the layers of a multilayered superconducting tunnel junction as an idealized example. A device with a high density of Bragg resonances is identified as desirable; both Nb/Si and NbN/SiN superlattices have been produced, with the latter having generally superior performance.

Quantum dynamics of small Josephson junctions: an application to superconductivity in granular films

International Nuclear Information System (INIS)

Fisher, M.P.A.

1986-01-01

This thesis is devoted to a study of the quantum dynamics of small Josephson junctions. Of interest are those features of the junction's behavior which depend explicitly on the quantum mechanical nature of the phase difference phi between the superconductors. In Chapters I and II several calculations are described which focus on the junction's DC resistance. A fully quantum mechanical Hamiltonian is employed that incorporates the dissipative effects due to the unpaired electrons by coupling to a bath of harmonic oscillators. It is shown that the model exhibits a novel zero temperature phase transition as a function of the strength of the dissipation. In the low dissipation regime the phase is free to tunnel quantum mechanically and the junction's resistance is finite; in response to an external current, tunnelling induces successive 2π phase slips leading to a finite voltage state. In contrast, in the high dissipation regime, tunnelling is suppressed and the junction behaves as a superconductor carrying current with no resistive losses. In Chapters III and IV, these results are applied in an attempt to explain the recent observation that in ultra thin Sn films there is apparently a universal normal state sheet resistance above which superconductivity cannot be established

Fabrication of TiN/AlN/TiN tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Nakayama, Takeru; Naruse, Masato; Myoren, Hiroaki; Taino, Tohru, E-mail: taino@mail.saitama-u.ac.jp

2016-11-15

Highlights: • We have fabricated TiN/AlN/TiN tunnel junctions with an epitaxial layer. • TiN and AlN films were deposited by dc and rf magnetron sputtering at ambient substrate temperatures. • The junctions have a V{sub g} = 1.1 mV, J{sub c} = 0.24 A/cm{sup 2}, R{sub sg}/R{sub n} of 7.2, and low subgap leakage current of 180 nA. - Abstract: We have fabricated TiN/AlN/TiN tunnel junctions with an epitaxial layer. The critical temperature of TiN can be changed in the range from 0.5 to 5.0 K. Therefore, it is easy to set 5.0 K as the target critical temperature. When a Superconducting Tunnel Junction (STJ) is operated as a photon detector, it is necessary to cool it to within 0.1 K of the critical temperature in consideration of the noise of the thermally stimulated currents. Because 0.3 K was desirable, as for the manufacture of general purpose photon detectors, the critical temperature 5.0 K. TiN and AlN films were deposited by dc and rf magnetron sputtering in a load-lock sputtering system at ambient substrate temperatures. The junctions have a gap voltage of V{sub g} = 1.1 mV, and critical current density of J{sub c} = 0.24 A/cm{sup 2}, and R{sub sg}/R{sub n} of 7.2, and low subgap leakage current (I{sub sub}@ 500 µV = 180 nA). We report our experiment system, the manufacture method and the junction properties in this paper.

Non-equilibrium properties of Josephson critical current in Nb-based three terminal superconducting tunnel devices

International Nuclear Information System (INIS)

Ammendola, G.; Parlato, L.; Peluso, G.; Pepe, G.

1998-01-01

Tunnel quasi-particle injection into a superconducting film provides useful information on the non-equilibrium state inside the perturbed superconductor as well as on the potential application to electronic devices. Three terminal injector-detector superconducting devices have a long history in non-equilibrium superconductivity. In the recent past non-equilibrium phenomena have attracted again considerable attention because of many superconducting based detectors involve processes substantially non-equilibrium in nature. The possibility of using a stacked double tunnel junction to study the influence of non-equilibrium superconductivity on the Josephson critical current is now considered. An experimental study of the effect of quasi-particle injection on the Josephson current both in steady-state and pulsed experiments down to T=1.2 K is presented using 3 terminal Nb-based stacked double tunnel devices. The feasibility of a new class of particle detectors based on the direct measurement of the change in the Josephson current following the absorption of a X-ray quantum is also discussed in terms of non-equilibrium theories. (orig.)

Supramolecular tunneling junctions

NARCIS (Netherlands)

Wimbush, K.S.

2012-01-01

In this study a variety of supramolecular tunneling junctions were created. The basis of these junctions was a self-assembled monolayer of heptathioether functionalized ß-cyclodextrin (ßCD) formed on an ultra-flat Au surface, i.e., the bottom electrode. This gave a well-defined hexagonally packed

Tunnelling determined superconducting energy gap of bulk single crystal aluminum

International Nuclear Information System (INIS)

Civiak, R.L.

1974-01-01

A procedure has been developed for fabricating Giaver tunnel junctions on bulk aluminum. Al-I-Ag junctions were prepared, where I is the naturally formed oxide on the polished, chemically treated aluminum surface. The aluminum energy gap was determined from tunneling conductance curves obtained from samples oriented in three different crystal directions, and as a function of magnetic field in each of these orientations. In contrast to the results of microwave absorption measurements on superconducting aluminum, no magnetic field dependence could be measured for either the average gap or the spread in gap values of the tunneling electrons. This is consistent with commonly accepted tunneling selection rules, and Garfunkel's interpretation of the microwave behavior which depended upon adjusting the energy spectrum of only the electrons traveling parallel to the surface in the presence of a magnetic field. The energy gaps measured for samples oriented in the 100, 110 and 111 directions are 3.52, 3.50 and 3.39 kT/sub c/, respectively. The trend in the anisotropy is the same as in the calculation of Leavens and Carbotte, however, the magnitude of the anisotropy is smaller than in their calculation and that which previous measurements have indicated

Spin, Vibrations and Radiation in Superconducting Junctions

NARCIS (Netherlands)

Padurariu, C.

2013-01-01

This thesis presents the theoretical study of superconducting transport in several devices based on superconducting junctions. The important feature of these devices is that the transport properties of the junction are modified by the interaction with another physical system integrated in the

Theory of superconducting tunneling without the tunneling Hamiltonian

International Nuclear Information System (INIS)

Arnold, G.B.

1987-01-01

When a tunneling barrier is nearly transparent, the standard tunneling (or transfer) Hamiltonian approximation fails. The author describes the theory which is necessary for calculating the tunneling current in these cases, and illustrate it by comparing theory and experiment on superconductor/insulator/superconductor (SIS) junctions have ultra-thin tunnel barriers. This theory accurately explains the subgap structure which appears in the dynamical resistance of such SIS junctions, including many observed details which no previous theory has reproduced. The expression for the current through an SIS junction with an ultrathin barrier is given by I(t) = Re{Sigma/sub n/ J/sub n/ (omega/sub o/)e/sup in omega/o/sup t/} where omega/sub o/ = 2eV/h is the Josephson frequency, V is the bias voltage, and the J/sub n/ are voltage dependent coefficients, one for each positive or negative integer, n, and n=0. The relative sign of the terms involving cos(n omega/sub o/t) and sin(n omega/sub o/t) agrees with experiment, in contrast to previous theories of Josephson tunneling

Point contact tunneling spectroscopy apparatus for large scale mapping of surface superconducting properties

Energy Technology Data Exchange (ETDEWEB)

Groll, Nickolas; Pellin, Michael J. [Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States); Zasadzinksi, John F. [Illinois Institute of Technology, Chicago, Illinois 60616 (United States); Proslier, Thomas, E-mail: prolier@anl.gov [Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States); High Energy Physics Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States)

2015-09-15

We describe the design and testing of a point contact tunneling spectroscopy device that can measure material surface superconducting properties (i.e., the superconducting gap Δ and the critical temperature T{sub C}) and density of states over large surface areas with size up to mm{sup 2}. The tip lateral (X,Y) motion, mounted on a (X,Y,Z) piezo-stage, was calibrated on a patterned substrate consisting of Nb lines sputtered on a gold film using both normal (Al) and superconducting (PbSn) tips at 1.5 K. The tip vertical (Z) motion control enables some adjustment of the tip-sample junction resistance that can be measured over 7 orders of magnitudes from a quasi-ohmic regime (few hundred Ω) to the tunnel regime (from tens of kΩ up to few GΩ). The low noise electronic and LabVIEW program interface are also presented. The point contact regime and the large-scale motion capabilities are of particular interest for mapping and testing the superconducting properties of macroscopic scale superconductor-based devices.

Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

Science.gov (United States)

Chang, Y. Austin; Yang, Jianhua Joshua

2008-11-11

This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

Experimental study of macroscopic quantum tunnelling in Bi2212 intrinsic Josephson junctions

International Nuclear Information System (INIS)

Matsumoto, Tetsuro; Kashiwaya, Hiromi; Shibata, Hajime; Kashiwaya, Satoshi; Kawabata, Shiro; Eisaki, Hiroshi; Yoshida, Yoshiyuki; Tanaka, Yukio

2007-01-01

The quantum dynamics of Bi 2 Sr 2 CaCu 2 O 8+δ intrinsic Josephson junctions (IJJs) is studied based on escape rate measurements. The saturations observed in the escape temperature and in the width of the switching current below 0.5 K (= T * ) indicate the transition of the switching mechanism from thermal activation to macroscopic quantum tunnelling. It is shown that the switching properties are consistently explained in terms of the underdamped Josephson junction with a quality factor of 70 ± 20 in spite of possible damping due to the nodal quasiparticles of d-wave superconductivity. The present result gives the upper limit of the damping of IJJs

Gap features of layered iron-selenium-tellurium compound below and above the superconducting transition temperature by break-junction spectroscopy combined with STS

Science.gov (United States)

Ekino, T.; Sugimoto, A.; Gabovich, A. M.

2018-05-01

We studied correlations between the superconducting gap features of Te-substituted FeSe observed by scanning tunnelling spectroscopy (STS) and break-junction tunnelling spectroscopy (BJTS). At bias voltages outside the superconducting gap-energy range, the broad gap structure exists, which becomes the normal-state gap above the critical temperature, T c. Such behaviour is consistent with the model of the partially gapped density-wave superconductor involving both superconducting gaps and pseudogaps, which has been applied by us earlier to high-Tc cuprates. The similarity suggests that the parent electronic spectrum features should have much in common for these classes of materials.

High density processing electronics for superconducting tunnel junction x-ray detector arrays

Energy Technology Data Exchange (ETDEWEB)

Warburton, W.K., E-mail: bill@xia.com [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Harris, J.T. [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Friedrich, S. [Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States)

2015-06-01

Superconducting tunnel junctions (STJs) are excellent soft x-ray (100–2000 eV) detectors, particularly for synchrotron applications, because of their ability to obtain energy resolutions below 10 eV at count rates approaching 10 kcps. In order to achieve useful solid detection angles with these very small detectors, they are typically deployed in large arrays – currently with 100+ elements, but with 1000 elements being contemplated. In this paper we review a 5-year effort to develop compact, computer controlled low-noise processing electronics for STJ detector arrays, focusing on the major issues encountered and our solutions to them. Of particular interest are our preamplifier design, which can set the STJ operating points under computer control and achieve 2.7 eV energy resolution; our low noise power supply, which produces only 2 nV/√Hz noise at the preamplifier's critical cascode node; our digital processing card that digitizes and digitally processes 32 channels; and an STJ I–V curve scanning algorithm that computes noise as a function of offset voltage, allowing an optimum operating point to be easily selected. With 32 preamplifiers laid out on a custom 3U EuroCard, and the 32 channel digital card in a 3U PXI card format, electronics for a 128 channel array occupy only two small chassis, each the size of a National Instruments 5-slot PXI crate, and allow full array control with simple extensions of existing beam line data collection packages.

Optimization of a tunneling barrier in magnetic tunneling junction by tilted-plasma oxidation

International Nuclear Information System (INIS)

Nam, C.H.; Shim, Heejae; Kim, K.S.; Cho, B.K.

2004-01-01

Oxidation of an AlO x insulating barrier in a magnetic tunneling junction (MTJ) was carried out by a tilted-plasma oxidation method. It was found that the tilted-plasma oxidation induced a gradual change in the extent of oxidation of an insulating layer, which consequently led to a gradual change in the tunneling magnetoresistance (TMR) and specific junction resistance (RA) of the MTJ. We found a linear relation in the TMR versus RA curve with positive and negative slopes for less- and overoxidized junctions, respectively, and a parabolic relation for optimally oxidized junctions. The crossover in the TMR versus RA curves provides an effective and useful way to optimize (and monitor) the oxidation condition of a tunneling barrier in MTJs especially of a tunneling barrier less than 10 A thick. The tunneling junctions were also investigated after thermal annealing at various temperatures. The observations after thermal annealing were found to be consistent with transmission electrons microscopy images and a scenario of the partial formation of an additional ultrathin tunneling barrier at the top surface of the bottom magnetic layer

Instabilities in thin tunnel junctions

International Nuclear Information System (INIS)

Konkin, M.K.; Adler, J.G.

1978-01-01

Tunnel junctions prepared for inelastic electron tunneling spectroscopy are often plagued by instabilities in the 0-500-meV range. This paper relates the bias at which the instability occurs to the barrier thickness

Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.

2015-01-01

The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown

Spin-dependent quasiparticle tunneling in junction superconductor-isolator-ferromagnetic

International Nuclear Information System (INIS)

Shlapak, Yu.V.; Shaternik, V.E.; Rudenko, E.M.

2001-01-01

The influence of Andreev reflection of quasiparticles in transparent tunnel junctions of superconductor-isolator-ferromagnetic on electric-current transport is studied within the framework of the Blonder-Tinkham-Klapwijk (BTK) model. It's obtained that current and signal-to-noise ratio can be increased for the memory cell by using in it the double-barrier tunnel junction ferromagnetic-isolator-superconductor-isolator-ferromagnetic instead off the usual tunnel junction ferromagnetic-isolator-ferromagnetic. The evolution of non-linear (tunnel-type) current-voltage characteristics with increasing of the junction transparency is described. (orig.)

Resonant tunnel magnetoresistance in a double magnetic tunnel junction

KAUST Repository

Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen

2011-01-01

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can

Low-leakage superconducting tunnel junctions with a single-crystal Al{sub 2}O{sub 3} barrier

Energy Technology Data Exchange (ETDEWEB)

Oh, S [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Department of Physics, University of Illinois, Urbana, IL 61801 (United States); Cicak, K; Osborn, K D; Simmonds, R W; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, R; Cooper, K B; Steffen, M; Martinis, J M [University of California, Santa Barbara, CA 93106 (United States)

2005-10-01

We have developed a two-step growth scheme for single-crystal Al{sub 2}O{sub 3} tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al{sub 2}O{sub 3} layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al{sub 2}O{sub 3} junction may open a new venue for coherent quantum devices.

Final Scientific/Technical Report: Electronics for Large Superconducting Tunnel Junction Detector Arrays for Synchrotron Soft X-ray Research

Energy Technology Data Exchange (ETDEWEB)

Warburton, William K

2009-03-06

Superconducting tunnel junction (STJ) detectors offer a an approach to detecting soft x-rays with energy resolutions 4-5 times better and at rates 10 faster than traditions semiconductor detectors. To make such detectors feasible, however, then need to be deployed in large arrays of order 1000 detectors, which in turn implies that their processing electronics must be compact, fully computer controlled, and low cost per channel while still delivering ultra-low noise performance so as to not degrade the STJ's performance. We report on our progress in designing a compact, low cost preamplifier intended for this application. In particular, we were able to produce a prototype preamplifier of 2 sq-cm area and a parts cost of less than $30 that matched the energy resolution of the best conventional system to date and demonstrated its ability to acquire an STJ I-V curve under computer control, the critical step for determining and setting the detectors' operating points under software control.

Josephson junction arrays and superconducting wire networks

International Nuclear Information System (INIS)

Lobb, C.J.

1992-01-01

Techniques used to fabricate integrated circuits make it possible to construct superconducting networks containing as many as 10 6 wires or Josephson junctions. Such networks undergo phase transitions from resistive high-temperature states to ordered low-resistance low-temperature states. The nature of the phase transition depends strongly on controllable parameters such as the strength of the superconductivity in each wire or junction and the external magnetic field. This paper will review the physics of these phase transitions, starting with the simplest zero-magnetic field case. This leads to a Kosterlitz-Thouless transition when the junctions or wires are weak, and a simple mean-field fransition when the junctions or wires are strong. Rich behavior, resulting from frustration, occurs in the presence of a magnetic field. (orig.)

Tunnel magnetoresistance in double spin filter junctions

International Nuclear Information System (INIS)

Saffarzadeh, Alireza

2003-01-01

We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

Superconducting flux qubits with π-junctions

International Nuclear Information System (INIS)

Shcherbakova, Anastasia

2014-01-01

In this thesis, we present a fabrication technology of Al/AlO x /Al Josephson junctions on Nb pads. The described technology gives the possibility of combining a variety of Nb-based superconducting circuits, like pi-junction phase-shifters with sub-micron Al/AlO x /Al junctions. Using this approach, we fabricated hybrid Nb/Al flux qubits with and without the SFS-junctions and studied dispersive magnetic field response of these qubits as well as their spectroscopy characteristics.

Phase-dependent noise in Josephson junctions

Science.gov (United States)

Sheldon, Forrest; Peotta, Sebastiano; Di Ventra, Massimiliano

2018-03-01

In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character that should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to both a previously noted phase-dependent thermal noise, and an undescribed non-stationary, phase-dependent dynamic noise. As experiments are approaching ranges in which these effects may be observed, we examine the form and magnitude of these processes. Their phase dependence can be realized experimentally as a hysteresis effect and may be used to probe defects present in JJ based qubits and in other superconducting electronics applications.

Hysteresis development in superconducting Josephson junctions

International Nuclear Information System (INIS)

Refai, T.F.; Shehata, L.N.

1988-09-01

The resistively and capacitive shunted junction model is used to investigate hysteresis development in superconducting Josephson junctions. Two empirical formulas that relate the hysteresis width and the quasi-particle diffusion length in terms of the junctions electrical parameters, temperature and frequency are obtained. The obtained formulas provide a simple tool to investigate the full potentials of the hysteresis phenomena. (author). 9 refs, 3 figs

Primary Tunnel Junction Thermometry

International Nuclear Information System (INIS)

Pekola, Jukka P.; Holmqvist, Tommy; Meschke, Matthias

2008-01-01

We describe the concept and experimental demonstration of primary thermometry based on a four-probe measurement of a single tunnel junction embedded within four arrays of junctions. We show that in this configuration random sample specific and environment-related errors can be avoided. This method relates temperature directly to Boltzmann constant, which will form the basis of the definition of temperature and realization of official temperature scales in the future

Long Josephson tunnel junctions with doubly connected electrodes

Science.gov (United States)

Monaco, R.; Mygind, J.; Koshelets, V. P.

2012-03-01

In order to mimic the phase changes in the primordial Big Bang, several cosmological solid-state experiments have been conceived, during the last decade, to investigate the spontaneous symmetry breaking in superconductors and superfluids cooled through their transition temperature. In one of such experiments, the number of magnetic flux quanta spontaneously trapped in a superconducting loop was measured by means of a long Josephson tunnel junction built on top of the loop itself. We have analyzed this system and found a number of interesting features not occurring in the conventional case with simply connected electrodes. In particular, the fluxoid quantization results in a frustration of the Josephson phase, which, in turn, reduces the junction critical current. Further, the possible stable states of the system are obtained by a self-consistent application of the principle of minimum energy. The theoretical findings are supported by measurements on a number of samples having different geometrical configuration. The experiments demonstrate that a very large signal-to-noise ratio can be achieved in the flux quanta detection.

An array of cold-electron bolometers with SIN tunnel junctions and JFET readout for cosmology instruments

International Nuclear Information System (INIS)

Kuzmin, L

2008-01-01

A novel concept of the parallel/series array of Cold-Electron Bolometers (CEB) with Superconductor-Insulator-Normal (SIN) Tunnel Junctions has been proposed. The concept was developed specially for matching the CEB with JFET amplifier at conditions of high optical power load. The CEB is a planar antenna-coupled superconducting detector with high sensitivity. For combination of effective HF operation and low noise properties the current-biased CEBs are connected in series for DC and in parallel for HF signal. A signal is concentrated from an antenna to the absorber through the capacitance of the tunnel junctions and through additional capacitance for coupling of superconducting islands. Using array of CEBs the applications can be considerably extended to higher power load by distributing the power between N CEBs and decreasing the electron temperature. Due to increased responsivity the noise matching is so effective that photon NEP could be easily achieved at 300 mK with a room temperature JFET for wide range of optical power loads. The concept of the CEB array has been developed for the BOOMERanG balloon telescope and other Cosmology instruments

Superconducting Coset Topological Fluids in Josephson Junction Arrays

CERN Document Server

Diamantini, M C; Trugenberger, C A; Sodano, Pasquale; Trugenberger, Carlo A.

2006-01-01

We show that the superconducting ground state of planar Josephson junction arrays is a P- and T-invariant coset topological quantum fluid whose topological order is characterized by the degeneracy 2 on the torus. This new mechanism for planar superconductivity is the P- and T-invariant analogue of Laughlin's quantum Hall fluids. The T=0 insulator-superconductor quantum transition is a quantum critical point characterized by gauge fields and deconfined degrees of freedom. Experiments on toroidal Josephson junction arrays could provide the first direct evidence for topological order and superconducting quantum fluids.

Development of the tunneling junction simulation environment for scanning tunneling microscope evaluation

International Nuclear Information System (INIS)

Gajewski, Krzysztof; Piasecki, Tomasz; Kopiec, Daniel; Gotszalk, Teodor

2017-01-01

Proper configuration of scanning tunneling microscope electronics plays an important role in the atomic scale resolution surface imaging. Device evaluation in the tunneling contact between scanning tip and sample may be prone to the surface quality or mechanical disturbances. Thus the use of tunneling junction simulator makes electronics testing more reliable and increases its repeatability. Here, we present the theoretical background enabling the proper selection of electronic components circuitry used as a tunneling junction simulator. We also show how to simulate mechanics related to the piezoelectric scanner, which is applied in real experiments. Practical use of the proposed simulator and its application in metrological characterization of the developed scanning tunneling microscope is also shown. (paper)

Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

International Nuclear Information System (INIS)

Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

1982-01-01

The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

Experimental observation of the transition from weak link to tunnel junction

International Nuclear Information System (INIS)

Muller, C.J.; Ruitenbeek, J.M. van; Jongh, L.J. de

1992-01-01

An extension to Morelands break junction technique is developed in order to obtain a clean and stable, mechanically adjustable junction. As a function of an externally applied force the coupling of two electrodes can be varied in vacuum. Experiments are described of a junction with niobium electrodes at 4.2 K which undergo a continuous change in normal resistance R N , from 1 to 10 9 Ω upon applying an increasing force. In this resistance range we discern a transition from a weak link regime to a tunnel regime. The current voltage (I-V) curves are reproducible upon adjustment changes in the whole resistance range. In the weak link regime the two electrodes of the junction are in physical contact with each other. The product of the critical current and normal resistance is compared with predictions of Ambegaokar-Baratoff and Kulik-Omelyanchuk. The product of the excess current and normal resistance shows a logarithmic increase for low R N values and decreases for the highest R N values in the weak link regime. Subharmonic gap structure, originating from multiple Andreev reflections is observed over a wide range of R N . In the transition regime the two electrodes are not in contact but there is still a large overlap of the superconducting and quasiparticle wave functions. In this regime a finite slope in the ''critical current part'' in the current voltage curve is observed. The I-V curves show features characteristic for both a weak link and a tunnel junction. In the tunnel regime there exists a vacuum gap between the electrodes and the Josephson coupling is suppressed. A considerable subgap current is observed, where the product of the subgap current and normal resistance is constant over almost four orders of magnitude of R N . A decreasing conductance near zero bias shows up in this regime. The normal resistance exhibits an exponential behaviour upon variations in the vacuum gap. (orig./WL)

Generation and detection of high-energy phonons by superconducting junctions

International Nuclear Information System (INIS)

Singer, I.L.

1976-01-01

Superconducting tunnel junctions are used to investigate the dynamics of energy exchange that takes place in superconductors driven out of equilibrium. In a Sn junction biased at a voltage V much greater than 2Δ(Sn)/e, the tunneling current sustains a continual energy exchange amongst the quasiparticles, phonons, and Cooper pairs. Repeatedly, high-energy quasiparticles decay, emitting phonons; and phonons with energy greater than 2Δ(Sn) break pairs, producing quasiparticles. The phonon-induced component of the current is recovered by synchronously detecting the full tunneling current with respect to a small modulation current in the generator. Sharp onsets observed at intervals of the gap energies require that the escaping phonons are produced by the direct decay of the injected quasiparticles and are not merely the high-energy tail of the thermalized phonons. Both primary and secondary phonons can be abserved distinctly. Theoretical transconductance curves have been computed. The experimental and theoretical curves are in good qualitative agreement. A more detailed comparison suggests that the escape rate of high-energy phonons depends on the energy of the phonons. The dependence of the observed transconductance signal on the temperature and the total junction thickness suggests that the presence of quasiparticles plays a major role in the escape of high-energy phonons. The dependence on temperature can be fitted to exp(b/kT), 0.74 less than b less than 1.05 MeV. It is speculated that the excitation energy is first transported across the superconductor and then carried out of the film by the phonons. It is concluded that high-energy phonons are a sensitive probe of the very reabsorption effects that make their escape so unlikely, and analysis of the detected phonons rich details of the behavior of superconductors removed from equilibrium

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2017-04-18

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

Tunneling junction as an open system. Normal tunneling

International Nuclear Information System (INIS)

Ono, Y.

1978-01-01

The method of the tunneling Hamiltonian is reformulated in the case of normal tunneling by introducing two independent particle baths. Due to the baths, it becomes possible to realize a final stationary state where the electron numbers of the two electrodes in the tunneling system are maintained constant and where there exists a stationary current. The effect of the bath-system couplings on the current-voltage characteristics of the junction is discussed in relation to the usual expression of the current as a function of voltage. (Auth.)

Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

International Nuclear Information System (INIS)

Shoji, A.; Aoyagi, M.; Kosaka, S.; Shinoki, F.; Hayakawa, H.

1985-01-01

Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K

Characterization of magnetic tunnel junction test pads

DEFF Research Database (Denmark)

Østerberg, Frederik Westergaard; Kjær, Daniel; Nielsen, Peter Folmer

2015-01-01

We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance (TMR), can be determined. The CIPT method...

Interplay between superconductivity and Coulomb blockade

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Thomas; Sprenger, Susanne; Scheer, Elke [Universitaet Konstanz (Germany)

2016-07-01

Studying the interplay between superconductivity and Coulomb blockade (CB) can be achieved by investigating an all superconducting single electron transistor (SSET) consisting of an island coupled to the leads by two tunneling contacts. The majority of experiments performed so far were using superconducting tunnel contacts made from oxide layers, in which multiple Andreev reflections (MAR) can be excluded. Using a mechanically controlled break junction (MCBJ) made of aluminum enables tuning the contributions of MAR in one junction continuously and thereby addressing different transport regimes within the same sample. Our results offer the possibility to attribute particular features in the transport characteristics to the transmission probabilities of individual modes in the MCBJ contact. We discuss our findings in terms of dynamical CB, SSET behaviour and MAR when continuously opening the MCBJ from the fully closed state to a tunneling contact.

Planar Josephson tunnel junctions in a transverse magnetic field

DEFF Research Database (Denmark)

Monacoa, R.; Aarøe, Morten; Mygind, Jesper

2007-01-01

demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse......Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian

2014-12-08

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek

2014-01-01

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

Energy Technology Data Exchange (ETDEWEB)

SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-05-16

Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

A Liquid-Cryogen-Free Superconducting Tunnel Junction X-ray Spectrometer for Astrobiology Research at the Synchrotron

International Nuclear Information System (INIS)

Friedrich, S.; Drury, O.B.; Hertrich, T.; Hoehne, J.

2008-01-01

Superconducting tunnel junctions (STJs) are being developed as energy-dispersive soft X-ray detectors, because they combine the high energy resolution of low-temperature detectors with the comparably high count rates of non-thermal devices. We have built a 36-pixel spectrometer based on 200 (micro)m x 200 (micro)m Nb-Al-AlOx-Al-Nb STJs. It offers an energy resolution of ∼10 to 20 eV FWHM in the soft X-ray band below 1 keV, a solid angle coverage (Omega)/4π ∼ 10 -3 , and can be operated at total rates up to ∼10 6 counts/s. For STJ operation by non-expert users, we have built a liquid-cryogen-free spectrometer with a mechanical pulse-tube cryocooler and a two-stage adiabatic demagnetization refrigerator. It is fully automated for cooldown to a base temperature of 3 days between demagnetization cycles for STJ operation at 0.3 K. The STJ spectrometers are used for speciation measurements on dilute samples by fluorescence-detected X-ray absorption spectroscopy, and can achieve sensitivities below 100 ppm. We discuss the spectrometer performance in representative applications on metals in meteorites in the context of geological signatures of biological activity

Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

Science.gov (United States)

Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

2018-01-01

Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

Reactive tunnel junctions in electrically driven plasmonic nanorod metamaterials

Science.gov (United States)

Wang, Pan; Krasavin, Alexey V.; Nasir, Mazhar E.; Dickson, Wayne; Zayats, Anatoly V.

2018-02-01

Non-equilibrium hot carriers formed near the interfaces of semiconductors or metals play a crucial role in chemical catalysis and optoelectronic processes. In addition to optical illumination, an efficient way to generate hot carriers is by excitation with tunnelling electrons. Here, we show that the generation of hot electrons makes the nanoscale tunnel junctions highly reactive and facilitates strongly confined chemical reactions that can, in turn, modulate the tunnelling processes. We designed a device containing an array of electrically driven plasmonic nanorods with up to 1011 tunnel junctions per square centimetre, which demonstrates hot-electron activation of oxidation and reduction reactions in the junctions, induced by the presence of O2 and H2 molecules, respectively. The kinetics of the reactions can be monitored in situ following the radiative decay of tunnelling-induced surface plasmons. This electrically driven plasmonic nanorod metamaterial platform can be useful for the development of nanoscale chemical and optoelectronic devices based on electron tunnelling.

Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction

NARCIS (Netherlands)

Jansen, R.; Lodder, J.C.

2000-01-01

Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared

The critical current of point symmetric Josephson tunnel junctions

International Nuclear Information System (INIS)

Monaco, Roberto

2016-01-01

Highlights: • We disclose some geometrical properties of the critical current field dependence that apply to a large class of Josephson junctions characterized by a point symmetric shape. • The developed theory is valid for any orientation of the applied magnetic field, therefore it allows the determine the consequences of field misalignment in the experimental setups. • We also address that the threshold curves of Josephson tunnel junctions with complex shapes can be expressed as a linear combination of the threshold curves of junctions with simpler point symmetric shapes. - Abstract: The physics of Josephson tunnel junctions drastically depends on their geometrical configurations. The shape of the junction determines the specific form of the magnetic-field dependence of its Josephson current. Here we address the magnetic diffraction patterns of specially shaped planar Josephson tunnel junctions in the presence of an in-plane magnetic field of arbitrary orientations. We focus on a wide ensemble of junctions whose shape is invariant under point reflection. We analyze the implications of this type of isometry and derive the threshold curves of junctions whose shape is the union or the relative complement of two point symmetric plane figures.

Microscopic tunneling theory of long Josephson junctions

DEFF Research Database (Denmark)

Grønbech-Jensen, N.; Hattel, Søren A.; Samuelsen, Mogens Rugholm

1992-01-01

We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate that the detai......We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate...

Response of high Tc superconducting Josephson junction to nuclear radiation

International Nuclear Information System (INIS)

Ding Honglin; Zhang Wanchang; Zhang Xiufeng

1992-10-01

The development of nuclear radiation detectors and research on high T c superconducting nuclear radiation detectors are introduced. The emphases are the principle of using thin-film and thick-film Josephson junctions (bridge junction) based on high T c YBCO superconductors to detect nuclear radiation, the fabrication of thin film and thick-film Josephson junction, and response of junction to low energy gamma-rays of 59.5 keV emitted from 241 Am and beta-rays of 546 keV. The results show that a detector for measuring nuclear radiation spectrum made of high T c superconducting thin-film or thick-film, especially, thick-film Josephson junction, certainly can be developed

Industrial tooling and methods for the junctions of the superconducting busbars in the interconnections between the LHC cryomagnets

International Nuclear Information System (INIS)

Balaguer, J M; Colombet, T; Jacquemod, A; Laurent, F; Nambride, C; Taffard, Y; Tock, J Ph

2006-01-01

The Large Hadron Collider (LHC) is the next world-facility for the high energy physics community, presently under installation at CERN, Geneva. The main components of the LHC are the twin-aperture high-field superconducting cryomagnets that are powered in series by superconducting Nb-Ti busbars. Along the machine, about 60 000 splices between the superconducting busbars have to be performed in-situ during the interconnection activities. They are carrying a nominal current varying from 600 A to 13 kA depending upon the magnets, at an operating temperature of 1.9 K. Three specific techniques have been developed and optimised for the splicing of the three main types of cables: inductive and resistive soldering, ultrasonic welding. After a brief presentation of the constraints and requirements applying to these junctions, the tooling is described, highlighting the industrialisation aspects. Before their use to interconnect actual cryomagnets in the LHC tunnel, the equipments and procedures follow rigorous qualification to ensure that all the characteristics of the junctions (electrical, mechanical, reliability, ...) are within the specifications. The assessment of the tooling performance is obtained via sample testing of superconducting busbars. Initial results are presented

Single-electron tunnel junction array

International Nuclear Information System (INIS)

Likharev, K.K.; Bakhvalov, N.S.; Kazacha, G.S.; Serdyukova, S.I.

1989-01-01

The authors have carried out an analysis of statics and dynamics of uniform one-dimensional arrays of ultrasmall tunnel junctions. The correlated single-electron tunneling in the junctions of the array results in its behavior qualitatively similar to that of the Josephson transmission line. In particular, external electric fields applied to the array edges can inject single-electron-charged solitons into the array interior. Shape of such soliton and character of its interactions with other solitons and the array edges are very similar to those of the Josephson vortices (sine-Gordon solitons) in the Josephson transmission line. Under certain conditions, a coherent motion of the soliton train along the array is possible, resulting in generation of narrowband SET oscillations with frequency f/sub s/ = /e where is the dc current flowing along the array

Highly doped layer for tunnel junctions in solar cells

Science.gov (United States)

Fetzer, Christopher M.

2017-08-01

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Magnetic tunnel junctions with monolayer hexagonal boron nitride tunnel barriers

Energy Technology Data Exchange (ETDEWEB)

Piquemal-Banci, M.; Galceran, R.; Bouzehouane, K.; Anane, A.; Petroff, F.; Fert, A.; Dlubak, B.; Seneor, P. [Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, Palaiseau 91767 (France); Caneva, S.; Martin, M.-B.; Weatherup, R. S.; Kidambi, P. R.; Robertson, J.; Hofmann, S. [Department of Engineering, University of Cambridge, Cambridge CB21PZ (United Kingdom); Xavier, S. [Thales Research and Technology, 1 avenue Augustin Fresnel, Palaiseau 91767 (France)

2016-03-07

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer.

Spin transport in spin filtering magnetic tunneling junctions.

Science.gov (United States)

Li, Yun; Lee, Eok Kyun

2007-11-01

Taking into account spin-orbit coupling and s-d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

Polaron effects on the dc- and ac-tunneling characteristics of molecular Josephson junctions

Science.gov (United States)

Wu, B. H.; Cao, J. C.; Timm, C.

2012-07-01

We study the interplay of polaronic effect and superconductivity in transport through molecular Josephson junctions. The tunneling rates of electrons are dominated by vibronic replicas of the superconducting gap, which show up as prominent features in the differential conductance for the dc and ac current. For relatively large molecule-lead coupling, a features that appears when the Josephson frequency matches the vibron frequency can be identified with an over-the-gap structure observed by Marchenkov [Nat. Nanotech. 1748-338710.1038/nnano.2007.2182, 481 (2007)]. However, we are more concerned with the weak-coupling limit, where resonant tunneling through the molecular level dominates. We find that certain features involving both Andreev reflection and vibron emission show an unusual shift of the bias voltage V at their maximum with the gate voltage Vg as V˜(2/3)Vg. Moreover, due to the polaronic effect, the ac Josephson current shows a phase shift of π when the bias eV is increased by one vibronic energy quantum ℏωv. This distinctive even-odd effect is explained in terms of the different sign of the coupling to vibrons of electrons and of Andreev-reflected holes.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Directory of Open Access Journals (Sweden)

Takeo Ohno and Yutaka Oyama

2012-01-01

Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope.

Science.gov (United States)

Nazin, G V; Wu, S W; Ho, W

2005-06-21

The scanning tunneling microscope enables atomic-scale measurements of electron transport through individual molecules. Copper phthalocyanine and magnesium porphine molecules adsorbed on a thin oxide film grown on the NiAl(110) surface were probed. The single-molecule junctions contained two tunneling barriers, vacuum gap, and oxide film. Differential conductance spectroscopy shows that electron transport occurs via vibronic states of the molecules. The intensity of spectral peaks corresponding to the individual vibronic states depends on the relative electron tunneling rates through the two barriers of the junction, as found by varying the vacuum gap tunneling rate by changing the height of the scanning tunneling microscope tip above the molecule. A simple, sequential tunneling model explains the observed trends.

Large resistance change on magnetic tunnel junction based molecular spintronics devices

Science.gov (United States)

Tyagi, Pawan; Friebe, Edward

2018-05-01

Molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies provided insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.

Non-equilibrium quasiparticle processes in superconductor tunneling structures

International Nuclear Information System (INIS)

Perold, W.J.

1990-01-01

A broad overview is presented of the phenomenon of superconductivity. The tunneling of quasiparticles in superconducter-insulator structures is described. Related non-equilibrium processes, such as superconductor bandgap suppresion, quasiparticle diffusion and recombination, and excess quasiparticle collection are discussed. The processes are illustrated with numerical computer simulation data. The importance of the inter-relationship between these processes in practical multiple tunneling junction superconducting device structures is also emphasized. 14 refs., 8 figs

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-01-01

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\bar{2}\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

KAUST Repository

Young, Erin C.

2016-01-26

In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

A Liquid-Cryogen-Free Superconducting Tunnel Junction X-ray Spectrometer for Astrobiology Research at the Synchrotron

Energy Technology Data Exchange (ETDEWEB)

Friedrich, S; Drury, O B; Hertrich, T; Hoehne, J

2008-06-15

Superconducting tunnel junctions (STJs) are being developed as energy-dispersive soft X-ray detectors, because they combine the high energy resolution of low-temperature detectors with the comparably high count rates of non-thermal devices. We have built a 36-pixel spectrometer based on 200 {micro}m x 200 {micro}m Nb-Al-AlOx-Al-Nb STJs. It offers an energy resolution of {approx}10 to 20 eV FWHM in the soft X-ray band below 1 keV, a solid angle coverage {Omega}/4{pi} {approx} 10{sup -3}, and can be operated at total rates up to {approx}10{sup 6} counts/s. For STJ operation by non-expert users, we have built a liquid-cryogen-free spectrometer with a mechanical pulse-tube cryocooler and a two-stage adiabatic demagnetization refrigerator. It is fully automated for cooldown to a base temperature of <30 mK in 15 hours, and has a hold time of >3 days between demagnetization cycles for STJ operation at 0.3 K. The STJ spectrometers are used for speciation measurements on dilute samples by fluorescence-detected X-ray absorption spectroscopy, and can achieve sensitivities below 100 ppm. We discuss the spectrometer performance in representative applications on metals in meteorites in the context of geological signatures of biological activity.

600 GHz resonant mode in a parallel array of Josephson tunnel junctions connected by superconducting microstrip lines

DEFF Research Database (Denmark)

Kaplunenko, V. K.; Larsen, Britt Hvolbæk; Mygind, Jesper

1994-01-01

on experimental and numerical investigations of a resonant step observed at a voltage corresponding to 600 GHz in the dc current-voltage characteristic of a parallel array of 20 identical small NbAl2O3Nb Josephson junctions interconnected by short sections of superconducting microstrip line. The junctions...... are mutually phase locked due to collective interaction with the line sections excited close to the half wavelength resonance. The phase locking range can be adjusted by means of an external dc magnetic field and the step size varies periodically with the magnetic field. The largest step corresponds...

Inhomogeneous superconductivity in a ferromagnet

International Nuclear Information System (INIS)

Kontos, T.; Aprili, M.; Lesueur, J.; Genet, F.; Boursier, R.; Grison, X.

2003-01-01

We have studied a new superconducting state where the condensate wave function resulting from conventional pairing, is modified by an exchange field. Superconductivity is induced into a ferromagnetic thin film (F) by the proximity effect with a superconducting reservoir (S). We observed oscillations of the superconducting order parameter induced in F as a function of the distance from the S/F interface. They originate from the finite momentum transfer provided to Cooper pairs by the splitting of the spin up and down bands. We measured the superconducting density of states in F by tunneling spectroscopy and the Josephson critical current when F is coupled with a superconducting counter-electrode. Negative values of the superconducting order parameter are revealed by capsized tunneling spectra in F and a negative Josephson coupling (π-junction)

Atomically Thin Al2O3 Films for Tunnel Junctions

Science.gov (United States)

Wilt, Jamie; Gong, Youpin; Gong, Ming; Su, Feifan; Xu, Huikai; Sakidja, Ridwan; Elliot, Alan; Lu, Rongtao; Zhao, Shiping; Han, Siyuan; Wu, Judy Z.

2017-06-01

Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and pinholes which prevent the realization of atomically thin barriers demanded for enhanced quantum coherence. In this work, we employ in situ scanning tunneling spectroscopy along with molecular-dynamics simulations to understand and control the growth of atomically thin Al2O3 tunnel barriers using atomic-layer deposition. We find that a carefully tuned initial H2O pulse hydroxylated the Al surface and enabled the creation of an atomically thin Al2O3 tunnel barrier with a high-quality M -I interface and a significantly enhanced barrier height compared to thermal AlOx . These properties, corroborated by fabricated Josephson junctions, show that atomic-layer deposition Al2O3 is a dense, leak-free tunnel barrier with a low defect density which can be a key component for the next generation of metal-insulator-metal tunnel junctions.

Rate of tunneling nonequilibrium quasiparticles in superconducting qubits

International Nuclear Information System (INIS)

Ansari, Mohammad H

2015-01-01

In superconducting qubits the lifetime of quantum states cannot be prolonged arbitrarily by decreasing temperature. At low temperature quasiparticles tunneling between the electromagnetic environment and superconducting islands takes the condensate state out of equilibrium due to charge imbalance. We obtain the tunneling rate from a phenomenological model of non-equilibrium, where nonequilibrium quasiparticle tunnelling stimulates a temperature-dependent chemical potential shift in the superconductor. As a result we obtain a non-monotonic behavior for relaxation rate as a function of temperature. Depending on the fabrication parameters for some qubits, the lowest tunneling rate of nonequilibrium quasiparticles can take place only near the onset temperature below which nonequilibrium quasiparticles dominate over equilibrium one. Our theory also indicates that such tunnelings can influence the probability of transitions in qubits through a coupling to the zero-point energy of phase fluctuations. (paper)

Magnetic reconstruction induced magnetoelectric coupling and spin-dependent tunneling in Ni/KNbO_3/Ni multiferroic tunnel junctions

International Nuclear Information System (INIS)

Zhang, Hu; Dai, Jian-Qing; Song, Yu-Min

2016-01-01

We investigate the magnetoelectric coupling and spin-polarized tunneling in Ni/KNbO_3/Ni multiferroic tunnel junctions with asymmetric interfaces based on density functional theory. The junctions have two stable polarization states. We predict a peculiar magnetoelectric effect in such junctions originating from the magnetic reconstruction of Ni near the KO-terminated interface. This reconstruction is induced by the reversal of the ferroelectric polarization of KNbO_3. Furthermore, the change in the magnetic ordering filters the spin-dependent current. This effect leads to a change in conductance by about two orders of magnitude. As a result we obtain a giant tunneling electroresistance effect. In addition, there exist sizable tunneling magnetoresistance effects for two polarization states. - Highlights: • We study the ME coupling and electron tunneling in Ni/KNbO_3/Ni junctions. • There is magnetic reconstruction of Ni atoms near the KO-terminated interface. • A peculiar magnetoelectric coupling effect is obtained. • Predicted giant tunneling electroresistance effects.

Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur

2012-06-01

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

Asymmetric voltage behavior of the tunnel magnetoresistance in double barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur; Gooneratne, Chinthaka Pasan; Kosel, Jü rgen

2012-01-01

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers. © (2012) Trans Tech Publications.

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Waintal, Xavier; Manchon, Aurelien

2017-01-01

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque

Spin polarized electron tunneling and magnetoresistance in molecular junctions.

Science.gov (United States)

Szulczewski, Greg

2012-01-01

This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

Spin-dependent tunnelling in magnetic tunnel junctions

International Nuclear Information System (INIS)

Tsymbal, Evgeny Y; Mryasov, Oleg N; LeClair, Patrick R

2003-01-01

The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)

Charge Transport in 2D DNA Tunnel Junction Diodes

KAUST Repository

Yoon, Minho

2017-11-06

Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

Charge Transport in 2D DNA Tunnel Junction Diodes

KAUST Repository

Yoon, Minho; Min, Sung-Wook; Dugasani, Sreekantha Reddy; Lee, Yong Uk; Oh, Min Suk; Anthopoulos, Thomas D.; Park, Sung Ha; Im, Seongil

2017-01-01

Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

Cryogen-free cryostat for large-scale arrays of superconducting tunnel junction ion detectors in time-of-flight mass spectrometry

Science.gov (United States)

Kushino, A.; Ohkubo, M.; Chen, Y. E.; Ukibe, M.; Kasai, S.; Fujioka, K.

2006-04-01

Nb-based superconducting tunnel junction (STJ) detectors have a fast time resolution of a few 100 ns and high operating temperature of 0.3 K. These advantages expand their applicable fields to time-of-flight mass spectrometry (TOF-MS). In order to enlarge effective detection area, we have built arrays based on hundreds of large STJ elements. To realize the fast readout and no-cross talk, coaxial cables made of low-thermal conductivity materials were investigated. From results of thermal conduction measurements, we chose thin coaxial cables with a diameter of 0.33 mm, consisting of CuNi center/outer conductors and Teflon insulator for the wiring between 0.3 K- 3He pot of the sorption pump and 3 K-2nd stage of GM cooler. Even after the installation of coaxial cables and a cold snout to the cryogen-free cryostat, we could keep arrays at 0.3 K for about a week, and reduction of the holding time at 0.3 K and temperature rise at 3He pot due to the installation were small, ˜0.5 day and 10 mK, respectively.

Four-state non-volatile memory in a multiferroic spin filter tunnel junction

Science.gov (United States)

Ruan, Jieji; Li, Chen; Yuan, Zhoushen; Wang, Peng; Li, Aidong; Wu, Di

2016-12-01

We report a spin filter type multiferroic tunnel junction with a ferromagnetic/ferroelectric bilayer barrier. Memory functions of a spin filter magnetic tunnel junction and a ferroelectric tunnel junction are combined in this single device, producing four non-volatile resistive states that can be read out in a non-destructive manner. This concept is demonstrated in a LaNiO3/Pr0.8Ca0.2MnO3/BaTiO3/La0.7Sr0.3MnO3 all-oxide tunnel junction. The ferromagnetic insulator Pr0.8Ca0.2MnO3 serves as the spin filter and the ferromagnetic metal La0.7Sr0.3MnO3 is the spin analyzer. The ferroelectric polarization reversal in the BaTiO3 barrier switches the tunneling barrier height to produce a tunneling electroresistance. The ferroelectric switching also modulates the spin polarization and the spin filtering efficiency in Pr0.8Ca0.2MnO3.

Phase locked 270-440 GHz local oscillator based on flux flow in long Josephson tunnel junctions

DEFF Research Database (Denmark)

Koshelets, V.P.; Shitov, S.V.; Filippenko, L.V.

2000-01-01

The combination of narrow linewidth and wide band tunability makes the Josephson flux flow oscillator (FFO) a perfect on-chip local oscillator for integrated sub-mm wave receivers for, e.g., spectral radio astronomy. The feasibility of phase locking the FFO to an external reference oscillator......-running tunnel junction. The results of residual FFO phase noise measurements are also presented. Finally, we propose a single-chip fully superconductive receiver with two superconductor–insulator–superconductor mixers and an integrated phase-locked loop. ©2000 American Institute of Physics....

Tunneling probe of fluctuating superconductivity in disordered thin films

Science.gov (United States)

Dentelski, David; Frydman, Aviad; Shimshoni, Efrat; Dalla Torre, Emanuele G.

2018-03-01

Disordered thin films close to the superconductor-insulator phase transition (SIT) hold the key to understanding quantum phase transition in strongly correlated materials. The SIT is governed by superconducting quantum fluctuations, which can be revealed, for example, by tunneling measurements. These experiments detect a spectral gap, accompanied by suppressed coherence peaks, on both sides of the transition. Here we describe the insulating side in terms of a fluctuating superconducting field with finite-range correlations. We perform a controlled diagrammatic resummation and derive analytic expressions for the tunneling differential conductance. We find that short-range superconducting fluctuations suppress the coherence peaks even in the presence of long-range correlations. Our approach offers a quantitative description of existing measurements on disordered thin films and accounts for tunneling spectra with suppressed coherence peaks.

Magnetoresistance of galfenol-based magnetic tunnel junction

International Nuclear Information System (INIS)

Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Eddrief, M.; Marangolo, M.

2015-01-01

The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe 1-x Ga x ) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude

Overlap junctions for high coherence superconducting qubits

Science.gov (United States)

Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

2017-07-01

Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

International Nuclear Information System (INIS)

García, I; Rey-Stolle, I; Algora, C

2012-01-01

An n ++ -GaAs/p ++ -AlGaAs tunnel junction with a peak current density of 10 100 A cm -2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm -2 and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations. (paper)

R.f.-induced steps in mutually coupled, two-dimensional distributed Josephson tunnel junctions

International Nuclear Information System (INIS)

Klein, U.; Dammschneider, P.

1991-01-01

This paper reports on the amplitudes of the current steps in the I-V characteristics of mutually coupled two-dimensional distributed Josephson tunnel junctions driven by microwaves. For this purpose we use a numerical computation algorithm based on a planar resonator model for the individual Josephson tunnel junctions to calculate the d.c. current density distribution. In addition to the fundamental microwave frequency, harmonic contents of the tunneling current are also considered. The lateral dimensions of the individual junctions are small compared to the microwave wavelength and the Josephson penetration depth, giving an almost constant current density distribution. Therefore, the coupled junctions can give much greater step amplitudes than a single junction with an equal tunneling area, because of their nonuniform current density distribution

Charge density waves as the origin of dip-hump structures in the differential tunneling conductance of cuprates: The case of d-wave superconductivity

Energy Technology Data Exchange (ETDEWEB)

Gabovich, Alexander M., E-mail: gabovich@iop.kiev.ua; Voitenko, Alexander I., E-mail: voitenko@iop.kiev.ua

2014-08-15

Highlights: • d-Wave superconductivity and charge-density waves compete for the Fermi surface. • Charge-density waves induce pseudogaps and peak-dip-hump structures in cuprates. • Tunnel spectra are non-symmetric due to the dielectric order-parameter phase fixation. • Scatter of the dielectric order parameter smears the tunnel spectra peculiarities. - Abstract: Quasiparticle differential current–voltage characteristics (CVCs) G(V) of non-symmetric tunnel junctions between d-wave superconductors with charge-density waves (CDWs) and normal metals were calculated. The dependences G(V) were shown to have a V-like form at small voltages V and low temperatures, and to be asymmetric at larger V owing to the presence of CDW peak in either of the V-branches. The spatial scatter of the dielectric (CDW) order parameter smears the CDW peak into a hump and induces a peak-dip-hump structure (PDHS) typical of CVCs observed for such junctions. At temperatures larger than the superconducting critical one, the PDHS evolves into a pseudogap depression. The results agree well with the scanning tunneling microscopy data for Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+δ} and YBa{sub 2}Cu{sub 3}O{sub 7−δ}. The results differ substantially from those obtained earlier for CDW s-wave superconductors.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

International Nuclear Information System (INIS)

Lumb, M. P.; Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J.; González, M.; Bennett, M. F.; Herrera, M.; Delgado, F. J.; Molina, S. I.

2016-01-01

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm 2 to be realized.

Wide bandgap, strain-balanced quantum well tunnel junctions on InP substrates

Energy Technology Data Exchange (ETDEWEB)

Lumb, M. P. [The George Washington University, Washington, DC 20037 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Yakes, M. K.; Schmieder, K. J.; Affouda, C. A.; Walters, R. J. [US Naval Research Laboratory, Washington, DC 20375 (United States); González, M.; Bennett, M. F. [Sotera Defense Solutions, Annapolis Junction, Maryland 20701 (United States); US Naval Research Laboratory, Washington, DC 20375 (United States); Herrera, M.; Delgado, F. J.; Molina, S. I. [University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

2016-05-21

In this work, the electrical performance of strain-balanced quantum well tunnel junctions with varying designs is presented. Strain-balanced quantum well tunnel junctions comprising compressively strained InAlAs wells and tensile-strained InAlAs barriers were grown on InP substrates using solid-source molecular beam epitaxy. The use of InAlAs enables InP-based tunnel junction devices to be produced using wide bandgap layers, enabling high electrical performance with low absorption. The impact of well and barrier thickness on the electrical performance was investigated, in addition to the impact of Si and Be doping concentration. Finally, the impact of an InGaAs quantum well at the junction interface is presented, enabling a peak tunnel current density of 47.6 A/cm{sup 2} to be realized.

Radio-frequency shot-noise measurement in a magnetic tunnel junction with a MgO barrier

International Nuclear Information System (INIS)

Rehman, Mushtaq; Park, Junghwan; Song, Woon; Chong, Yonuk; Lee, Yeonsub; Min, Byoungchul; Shin, Kyungho; Ryu, Sangwan; Khim, Zheong

2010-01-01

We measured the noise power of a magnetic tunnel junction in the frequency range of 710 ∼ 1200 MHz. A low-noise cryogenic HEMT amplifier was used to measure the small noise signal at a high frequency with wide bandwidth. The MgO-barrier tunnel junction showed large tunnel magnetoresistance ratio of 215% at low temperature, which indicates electronic transport through the tunnel barrier without any significant spin-flip scattering. In the bias-dependent noise measurement, however, the zero-bias shot noise was enhanced compared to the value expected from a perfect tunnel barrier or the value observed from a good Al-AlO x -Al tunnel junction. We assume that this enhanced noise comes from inelastic tunneling processes through the barrier, which may be related to the observed zero-bias anomaly in the differential resistance of the tunnel junctions. We present a simple phenomenological model for how the inelastic scattering process can enhance the zero-bias noise in a tunnel junction.

Tunneling explains efficient electron transport via protein junctions.

Science.gov (United States)

Fereiro, Jerry A; Yu, Xi; Pecht, Israel; Sheves, Mordechai; Cuevas, Juan Carlos; Cahen, David

2018-05-15

Metalloproteins, proteins containing a transition metal ion cofactor, are electron transfer agents that perform key functions in cells. Inspired by this fact, electron transport across these proteins has been widely studied in solid-state settings, triggering the interest in examining potential use of proteins as building blocks in bioelectronic devices. Here, we report results of low-temperature (10 K) electron transport measurements via monolayer junctions based on the blue copper protein azurin (Az), which strongly suggest quantum tunneling of electrons as the dominant charge transport mechanism. Specifically, we show that, weakening the protein-electrode coupling by introducing a spacer, one can switch the electron transport from off-resonant to resonant tunneling. This is a consequence of reducing the electrode's perturbation of the Cu(II)-localized electronic state, a pattern that has not been observed before in protein-based junctions. Moreover, we identify vibronic features of the Cu(II) coordination sphere in transport characteristics that show directly the active role of the metal ion in resonance tunneling. Our results illustrate how quantum mechanical effects may dominate electron transport via protein-based junctions.

Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

Science.gov (United States)

Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

2013-06-25

Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

Magnetoresistance of galfenol-based magnetic tunnel junction

Energy Technology Data Exchange (ETDEWEB)

Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Rafaqat, H. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); ICTP, Trieste (Italy); Roddaro, S. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, 56127 Pisa (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universités, UPMC Paris 06, CNRS-UMR 7588, Institut des Nanosciences de Paris, 75005, Paris (France)

2015-12-15

The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

Analysis of different tunneling mechanisms of InxGa1−xAs/AlGaAs tunnel junction light-emitting transistors

International Nuclear Information System (INIS)

Wu, Cheng-Han; Wu, Chao-Hsin

2014-01-01

The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In x Ga 1−x As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

Spin-dependent transport in metal/semiconductor tunnel junctions

NARCIS (Netherlands)

Prins, M.W.J.; Kempen, van H.; Leuken, Van H.; Groot, de R.A.; Roy, van W.; De Boeck, J.

1995-01-01

This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to

Magnetic tunnel junction device having an intermediate layer

NARCIS (Netherlands)

2001-01-01

A magnetic tunnel junction device has a multi-layer structure including a pair of electrode layers of a ferromagnetic material and a tunnel barrier layer of an insulating material between the electrode layers. In order to realize a low resistance, the multi-layer structure also includes an

Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions

International Nuclear Information System (INIS)

Dai, Jian-Qing

2016-01-01

We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO 3 /Fe multiferroic tunnel junction with asymmetric TiO 2 - and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p z orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

Thermal stability of tunneling spin polarization

International Nuclear Information System (INIS)

Kant, C.H.; Kohlhepp, J.T.; Paluskar, P.V.; Swagten, H.J.M.; Jonge, W.J.M. de

2005-01-01

We present a study of the thermal stability of tunneling spin polarization in Al/AlOx/ferromagnet junctions based on the spin-polarized tunneling technique, in which the Zeeman-split superconducting density of states in the Al electrode is used as a detector for the spin polarization. Thermal robustness of the polarization, which is of key importance for the performance of magnetic tunnel junction devices, is demonstrated for post-deposition anneal temperatures up to 500 o C with Co and Co 90 Fe 10 top electrodes, independent of the presence of an FeMn layer on top of the ferromagnet

Tunneling anisotropic magnetoresistance in Co/AIOx/Al tunnel junctions with fcc Co (111) electrodes

NARCIS (Netherlands)

Wang, Kai; Tran, T. Lan Ahn; Brinks, Peter; Brinks, P.; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

2013-01-01

Tunneling anisotropic magnetoresistance (TAMR) has been characterized in junctions comprised of face-centered cubic (fcc) Co (111) ferromagnetic electrodes grown epitaxially on sapphire substrates, amorphous AlOx tunnel barriers, and nonmagnetic Al counterelectrodes. Large TAMR ratios have been

Similarities between normal- and super-currents in topological insulator magnetic tunnel junctions

International Nuclear Information System (INIS)

Soodchomshom, Bumned; Chantngarm, Peerasak

2010-01-01

This work compares the normal-current in a NM/Fi/NM junction with the super-current in a SC/Fi/SC junction, where both are topological insulator systems. NM and Fi are normal region and ferromagnetic region of thickness d with exchange energy m playing a role of the mass of the Dirac electrons and with the gate voltage V G , respectively. SC is superconducting region induced by a s-wave superconductor. We show that, interestingly, the critical super-current passing through a SC/Fi/SC junction behaves quite similar to the normal-current passing through a NM/Fi/NM junction. The normal-current and super-current exhibit N-peak oscillation, found when currents are plotted as a function of the magnetic barrier strength χ ∼ md/hv F . With the barrier strength Z ∼ V G d/hv F , the number of peaks N is determined through the relation Z ∼ Nπ + σπ (with 0 < σ≤1 for χ < Z). The normal- and the super-currents also exhibit oscillating with the same height for all of peaks, corresponding to the Dirac fermion tunneling behavior. These anomalous oscillating currents due to the interplay between gate voltage and magnetic field in the barrier were not found in graphene-based NM/Fi/NM and SC/Fi/SC junctions. This is due to the different magnetic effect between the Dirac fermions in topological insulator and graphene.

Interfacial density of states in magnetic tunnel junctions

NARCIS (Netherlands)

LeClair, P.R.; Kohlhepp, J.T.; Swagten, H.J.M.; Jonge, de W.J.M.

2001-01-01

Large zero-bias resistance anomalies as well as a collapse of magnetoresistance were observed in Co/Al2O3/Co magnetic tunnel junctions with thin Cr interfacial layers. The tunnel magnetoresistance decays exponentially with nominal Cr interlayer thickness with a length scale of ~1 Å more than twice

The role of Mg interface layer in MgO magnetic tunnel junctions with CoFe and CoFeB electrodes

Directory of Open Access Journals (Sweden)

Hyunsoo Yang

2012-03-01

Full Text Available The tunneling spin polarization (TSP is directly measured from reactively sputter deposited crystalline MgO tunnel barriers with various CoFe(B compositions using superconducting tunneling spectroscopy. We find that the Mg interface layer thickness dependence of TSP values for CoFeB/Mg/MgO junctions is substantially different from those for CoFe/Mg/MgO especially in the pre-annealed samples due to the formation of boron oxide at the CoFeB/MgO interface. Annealing depletes boron at the interface thus requiring a finite Mg interface layer to prevent CoFeOx formation at the CoFeB/MgO interface so that the TSP values can be optimized by controlling Mg thickness.

Doped Josephson tunneling junction for use in a sensitive IR detector

International Nuclear Information System (INIS)

Fletcher, J.C.; Saffren, M.M.

1975-01-01

A superconductive tunneling device having a modified tunnel barrier capable of supporting Josephson tunneling current is provided. The tunnel barrier located between a pair of electrodes includes a molecular species which is capable of coupling incident radiation of a spectrum characteristic of the molecular species into the tunnel barrier. The coupled radiation modulates the known Josephson characteristics of the superconducting device. As a result of the present invention, a superconductive tunneling device can be tuned or made sensitive to a particular radiation associated with the dopant molecular species. The present invention is particularly useful in providing an improved infrared detector. The tunnel barrier region can be, for example, an oxide of an electrode or frozen gas. The molecular species can be intermixed with the barrier region such as the frozen gas or deposited as one or more layers of molecules on the barrier region. The deposited molecules of the molecular species are unbonded and capable of responding to a radiation characteristic of the molecules. Semi-conductor material can be utilized as the molecular species to provide an increased selective bandwidth response. Finally, appropriate detector equipment can be utilized to measure the modulation of any of the Josephson characteristics such as critical current, voltage steps, Lambe-Jaklevic peaks and plasma frequency. (auth)

Josephson tunnel junctions in niobium films

International Nuclear Information System (INIS)

Wiik, Tapio.

1976-12-01

A method of fabricating stable Josephson tunnel junctions with reproducible characteristics is described. The junctions have a sandwich structure consisting of a vacuum evaporated niobium film, a niobium oxide layer produced by the glow discharge method and a lead film deposited by vacuum evaporation. Difficulties in producing thin-film Josephson junctions are discussed. Experimental results suggest that the lower critical field of the niobium film is the most essential parameter when evaluating the quality of these junctions. The dependence of the lower critical field on the film thickness and on the Ginzburg-Landau parameter of the film is studied analytically. Comparison with the properties of the evaporated films and with the previous calculations for bulk specimens shows that the presented model is applicable for most of the prepared samples. (author)

Hybrid High-Temperature-Superconductor–Semiconductor Tunnel Diode

Directory of Open Access Journals (Sweden)

Alex Hayat

2012-12-01

Full Text Available We report the demonstration of hybrid high-T_{c}-superconductor–semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T_{c}-superconductor–semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor–normal-material junction. Additional junctions are demonstrated using Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} combined with graphite or Bi_{2}Te_{3}. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications.

S-I-N tunneling spectroscopy of MgB2 superconductor: evidence of two superconducting energy gaps

International Nuclear Information System (INIS)

Sen, Shashwati; Aswal, D.K.; Singh, Ajay; Gadkari, S.C.; Shah, K.; Gupta, S.K.; Sahni, V.C.

2002-01-01

The tunneling spectra of polycrystalline MgB 2 , have been recorded, at different temperatures between 29 K and T c , using planar superconductor- insulating-normal (S-I-N) tunneling spectroscopy. The planar S-I-N tunnel junctions have been fabricated by thermally evaporating Ag electrodes on MgB 2 surface. The naive layer, which forms at the surface of MgB 2 , due to atmospheric degradation, was employed as an insulating layer between Ag electrodes and MgB 2 . We have found presence of two clear superconducting energy gaps in MgB 2 . The magnitudes of these gaps at 29.5 K are 1.8 and 5.9 MeV, respectively. In the vicinity of T c , while larger energy gap obeyed BCS temperature dependence, the smaller energy gap deviated from BCS dependence. All the spectra exhibited zero-bias conductance, which decreased linearly with temperature and vanished at T c . (author)

Magnetic tunnel junctions with AlN and AlNxOy barriers

International Nuclear Information System (INIS)

Schwickert, M. M.; Childress, J. R.; Fontana, R. E.; Kellock, A. J.; Rice, P. M.; Ho, M. K.; Thompson, T. J.; Gurney, B. A.

2001-01-01

Nonoxide tunnel barriers such as AlN are of interest for magnetic tunnel junctions to avoid the oxidation of the magnetic electrodes. We have investigated the fabrication and properties of thin AlN-based barriers for use in low resistance magnetic tunnel junctions. Electronic, magnetic and structural data of tunnel valves of the form Ta (100 Aa)/PtMn (300 Aa)/CoFe 20 (20 Aa - 25 Aa)/barrier/CoFe 20 (10 - 20 Aa)/NiFe 16 (35 - 40 Aa)/Ta (100 Aa) are presented, where the barrier consists of AlN, AlN x O y or AlN/AlO x with total thicknesses between 8 and 15 Aa. The tunnel junctions were sputter deposited and then lithographically patterned down to 2 x 2μm 2 devices. AlN was deposited by reactive sputtering from an Al target with 20% - 35% N 2 in the Ar sputter gas at room temperature, resulting in stoichiometric growth of AlN x (x=0.50±0.05), as determined by RBS. TEM analysis shows that the as-deposited AlN barrier is crystalline. For AlN barriers and AlN followed by natural O 2 oxidation, we obtain tunnel magnetoresistance >10% with specific junction resistance R j down to 60Ωμm 2 . [copyright] 2001 American Institute of Physics

Y-junction of superconducting Josephson chains

International Nuclear Information System (INIS)

Giuliano, Domenico; Sodano, Pasquale

2009-01-01

We show that, for pertinent values of the fabrication and control parameters, an attractive finite coupling fixed point emerges in the phase diagram of a Y-junction of superconducting Josephson chains. The new fixed point arises only when the dimensionless flux f piercing the central loop of the network equals π and, thus, does not break time-reversal invariance; for f≠π, only the strongly coupled fixed point survives as a stable attractive fixed point. Phase slips (instantons) have a crucial role in establishing this transition: we show indeed that, at f=π, a new set of instantons-the W-instantons-comes into play to destabilize the strongly coupled fixed point. Finally, we provide a detailed account of the Josephson current-phase relationship along the arms of the network, near each one of the allowed fixed points. Our results evidence remarkable similarities between the phase diagram accessible to a Y-junction of superconducting Josephson chains and the one found in the analysis of quantum Brownian motion on frustrated planar lattices

Thermopower in double planar tunnel junctions with ferromagnetic barriers and nonmagnetic electrodes

Energy Technology Data Exchange (ETDEWEB)

Wilczyński, M., E-mail: wilczyns@if.pw.edu.pl

2017-01-01

The Seebeck effect is investigated in double planar tunnel junctions consisting of nonmagnetic electrodes and the central layer separated by ferromagnetic barriers. Calculations are performed in the linear response theory using the free-electron model. The thermopower is analyzed as a function of the thickness of the central layer, temperature of the junctions and the relative orientation of magnetic moments of the barriers. It has been found that the thermopower can be significantly enhanced in the junction with special central layer thickness due to electron tunneling by resonant states. The thickness of the central layer for which the thermopower is enhanced depends not only on the temperature of the junction but also on the orientation of magnetic moments in the barriers. - Highlights: • Thermopower in the double planar junctions with magnetic barriers is analyzed. • Thermopower can be enhanced due to the resonant tunneling. • Thermopower depends on the magnetic configuration of the junction.

Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7−δ/BaTiO3 bilayers for application in tunnel junctions

International Nuclear Information System (INIS)

Navarro, H.; Sirena, M.; Haberkorn, N.; Yang, Ilkyu; Kim, Jeehoon

2015-01-01

The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO 3 tunnel barrier deposited on a 16 nm thick GdBa 2 Cu 3 O 7−δ thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO 3 barrier thickness between 1.6 and 4 nm. The BaTiO 3 layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the applied voltage). The GdBa 2 Cu 3 O 7−δ electrode is totally covered by a BaTiO 3 thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO 3 top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO 3 thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa 2 Cu 3 O 7−δ . The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO 3 barrier)

Temperature dependence of shot noise in double barrier magnetic tunnel junctions

Science.gov (United States)

Niu, Jiasen; Liu, Liang; Feng, J. F.; Han, X. F.; Coey, J. M. D.; Zhang, X.-G.; Wei, Jian

2018-03-01

Shot noise reveals spin dependent transport properties in a magnetic tunnel junction. We report measurement of shot noise in CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions, which shows a strong temperature dependence. The Fano factor used to characterize shot noise increases with decreasing temperature. A sequential tunneling model can be used to account for these results, in which a larger Fano factor results from larger spin relaxation length at lower temperatures.

Superconducting transistor

International Nuclear Information System (INIS)

Gray, K.E.

1978-01-01

A three film superconducting tunneling device, analogous to a semiconductor transistor, is presented, including a theoretical description and experimental results showing a current gain of four. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the semiconductor junction transistor

Properties on niobium-based Josephson tunneling elements in junction microstructures

International Nuclear Information System (INIS)

Albrecht, G.; Richter, J.; Weber, P.

1982-01-01

We describe the fabrication and electrical characteristics of niobium oxide-barrier tunnel junctions with counterelectrodes of lead/lead alloy. Primary attention is directed to the experimental conditions necessary to obtain high-quality tunnel barriers as well as studies on characterizing the atomic structure of the barrier region. In order to study the tunnel barrier homogeneity in the tunneling region the magnetic field dependence of the critical Josephson current is investigated. The I--V characteristics and dependence of the critical Josephson current on temperature are analyzed quantitatively by using a proximity effect model. Finally, we discuss experimental results on the improvement of junction quality by including traces of carbon in the rf argon plasma during the sputter cleaning of niobium base electrodes

Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions.

Science.gov (United States)

Soni, Rohit; Petraru, Adrian; Meuffels, Paul; Vavra, Ondrej; Ziegler, Martin; Kim, Seong Keun; Jeong, Doo Seok; Pertsev, Nikolay A; Kohlstedt, Hermann

2014-11-17

Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO(3) barrier, La(0.7)Sr(0.3)MnO(3) bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages.

Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

KAUST Repository

Useinov, A. N.

2011-08-24

We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

KAUST Repository

Useinov, A. N.; Kosel, Jü rgen; Useinov, N. Kh.; Tagirov, L. R.

2011-01-01

We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

Tunneling magnetoresistance and electroresistance in Fe/PbTiO{sub 3}/Fe multiferroic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Dai, Jian-Qing, E-mail: djqkust@sina.com [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

2016-08-21

We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction with asymmetric TiO{sub 2}- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p{sub z} orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

A review on all-perovskite multiferroic tunnel junctions

Directory of Open Access Journals (Sweden)

Yuewei Yin

2017-12-01

Full Text Available Although the basic concept was proposed only about 10 years ago, multiferroic tunnel junctions (MFTJs with a ferroelectric barrier sandwiched between two ferromagnetic electrodes have already drawn considerable interests, driven mainly by its potential applications in multi-level memories and electric field controlled spintronics. The purpose of this article is to review the recent progress of all-perovskite MFTJs. Starting from the key functional properties of the tunneling magnetoresistance, tunneling electroresistance, and tunneling electromagnetoresistance effects, we discuss the main origins of the tunneling electroresistance effect, recent progress in achieving multilevel resistance states in a single device, and the electrical control of spin polarization and transport through the ferroelectric polarization reversal of the tunneling barrier.

High-efficiency thermal switch based on topological Josephson junctions

Science.gov (United States)

Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

2017-02-01

We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

Effect of superconducting electrons on the energy splitting of tunneling systems

International Nuclear Information System (INIS)

Yu, C.C.; Granato, A.V.

1985-01-01

We consider the effect of superconducting electrons on the magnitude of the energy splitting of a tunneling system. A specific example is a hydrogen atom tunneling in niobium. We find that in this case the splitting is roughly 20% smaller in the normal state than in the superconducting state. This difference in the splitting should be observable in neutron scattering and ultrasonic measurements

Flexible MgO Barrier Magnetic Tunnel Junctions.

Science.gov (United States)

Loong, Li Ming; Lee, Wonho; Qiu, Xuepeng; Yang, Ping; Kawai, Hiroyo; Saeys, Mark; Ahn, Jong-Hyun; Yang, Hyunsoo

2016-07-01

Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fluctuations of the peak current of tunnel diodes in multi-junction solar cells

International Nuclear Information System (INIS)

Jandieri, K; Baranovskii, S D; Stolz, W; Gebhard, F; Guter, W; Hermle, M; Bett, A W

2009-01-01

Interband tunnel diodes are widely used to electrically interconnect the individual subcells in multi-junction solar cells. Tunnel diodes have to operate at high current densities and low voltages, especially when used in concentrator solar cells. They represent one of the most critical elements of multi-junction solar cells and the fluctuations of the peak current in the diodes have an essential impact on the performance and reliability of the devices. Recently we have found that GaAs tunnel diodes exhibit extremely high peak currents that can be explained by resonant tunnelling through defects homogeneously distributed in the junction. Experiments evidence rather large fluctuations of the peak current in the diodes fabricated from the same wafer. It is a challenging task to clarify the reason for such large fluctuations in order to improve the performance of the multi-junction solar cells. In this work we show that the large fluctuations of the peak current in tunnel diodes can be caused by relatively small fluctuations of the dopant concentration. We also show that the fluctuations of the peak current become smaller for deeper energy levels of the defects responsible for the resonant tunnelling.

Properties of superconducting S-I-N, S-I-S, and S-C-S structures with amorphous weak coupling

International Nuclear Information System (INIS)

Kozub, V.I.

1984-01-01

The properties due to the presence of two-level structure systems in superconducting tunnel junctions with amorphous insulators, as well as in point and bridge Josephson junctions with amorphous surrounds, are investigated. Equations are obtained for tunneling with participation of the two-level systems for the cases of quasistatic tunneling in an S-I-N junction (N is the normal metal) and for the case of Josephson tunneling in an S-I-S junction. It is shown that inelastic tunneling makes an additional contribution to the nonlinearity of the current-voltage characteristic of an S-I-N junction. The specific phenomena of nonexponential relaxation in this junction (in particular, tunnel-current relaxation), which have a 1/t dependence, are discussed. Low-frequency noise in S-I-S and S-C-S structures, due to transitions in the two-level system and having a 1/f dependence at not too small junction sizes are considered. In the case of the stationary Josephson effect this noise has features of critical-current fluctuations that can manifest themselves, in particular as fluctuations of the magnetic flux linked with a weakly coupled superconducting ring. Under conditions of the nonstationary Josephson effect the two-level structures lead to broadening of the Josephson-generation line. It is proposed to use the nonstationary Josephson effect to observe the echo effect in glasses

Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions

International Nuclear Information System (INIS)

Mu Haifeng; Zhu Zhengang; Zheng Qingrong; Jin Biao; Wang Zhengchuan; Su Gang

2004-01-01

A recent elegant experimental realization [S. Yuasa et al., Science 297 (2002) 234] of the spin-polarized resonant tunneling in magnetic tunnel junctions is interpreted in terms of a two-band model. It is shown that the tunnel magnetoresistance (TMR) decays oscillatorily with the thickness of the normal metal (NM) layer, being fairly in agreement with the experimental observation. The tunnel conductance is found to decay with slight oscillations with the increase of the NM layer thickness, which is also well consistent with the experiment. In addition, when the magnetizations of both ferromagnet electrodes are not collinearly aligned, TMR is found to exhibit sharp resonant peaks at some particular thickness of the NM layer. The peaked TMR obeys nicely a Gaussian distribution against the relative orientation of the magnetizations

Single-electron charging effects and implications for tunneling measurements of the high-T/sub c/ superconductors

International Nuclear Information System (INIS)

Barner, J.B.; Honkanen, M.J.; Ruggiero, S.T.; Mullen, K.; Ben-Jacob, E.; Pelton, A.R.; Michigan Univ., Ann Arbor, MI

1989-01-01

The authors present a theory for the dynamics of two voltage-biased, ultra-small-capacitance tunnel junctions connected in series when one or more electrodes are superconducting and experiments performed on parallel arrays of such junctions. Using the semiclassical model, they find that the I-V characteristics display steps and therefore multiple peaks in dI/dV, corresponding to the time-average occupation of the interjunction region by integral numbers of electrons. The voltage at which the first step is located depends on the superconducting gap, Δ(T), and the capacitances of the junctions. The spacing between subsequent steps depends solely on the capacitances. They discuss electron tunneling results performed on metal/Al/sub 2/O/sub 3//2-10 nm-diameter metal particles/Al/sub 2/O/sub 3//metal junctions where this multiple-peak structure is observed. They present preliminary tunneling results in junctions employing Pb-particles, where they observe a shift of the peaks when the sample is cooled below T/sub c/ of Pb consistent with theory. Taken together, these results indicate that the multiple-peak structure commonly observed in tunneling data of high-T/sub c/ oxide superconductors can be explained in terms of charging effects in a material with a single superconducting gap. Finally, they discuss possible applications in a new type of transistor element

Proximity-effect and tunneling in YBa2Cu3O7/metal layered structures

International Nuclear Information System (INIS)

Greene, L.H.; Feldmann, W.L.; Barner, J.B.; Farrow, L.A.; Miceli, P.F.; Ramesh, R.; Wilkens, B.J.; Bagley, B.G.; Giroud, M.; Rowell, J.M.

1990-01-01

Superconducting thin films of YBa 2 Cu 3 O 7 are prepared in-situ by on-axis sputter deposition from a single, composite target. The planar magnetron target composition of YBa:Cu = 1.08:1.76:4.5 sputtered onto MgO at T ∼ 750 degrees C in a 600 mTorr Ar-O 2 atmosphere yields reproducible superconducting films having T c (R = 0) > 80 K and stoichiometry 1:2:3, that are shiny and of near epitaxial crystalline quality. In order to ensure clean interfaces, YBa 2 Cu 3 O 7 /normal metal bilayers (to form SNS' Josephson junctions) and YBa 2 Cu 3 O 7 /normal metal/insulating barrier trilayers (to form SNIS' proximity tunnel junctions) are grown completely in-situ. (The S' = Pb counter electrode is evaporated ex-situ.) A supercurrent and Shapiro steps are observed in microwave irradiated SNS' (N = Ag) small area (5 x 10 -5 cm 2 junctions. In SNIS' tunnel junctions, high-quality Pb tunnelling is observed

Phonon structure in proximity tunnel junctions

International Nuclear Information System (INIS)

Zarate, H.G.; Carbotte, J.P.

1985-01-01

We have iterated to convergence, for the first time, a set of four coupled real axis Eliashberg equations for the superconducting gap and renormalization functions on each side of a proximity sandwich. We find that the phenomenological procedures developed to extract the size of the normal side electron-phonon interaction from tunneling data are often reasonable but may in some cases need modifications. In all the cases considered the superconducting phonon structure reflected on the normal side, as well as other structures, shows considerable agreement with experiment as to size, shape, and variation with barrier transmission coefficient. Finally, we study the effects of depairing on these structures

Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

Science.gov (United States)

Althammer, Matthias; Mishra, Rohan; Borisevich, Albina J.; Singh, Amit Vikam; Keshavarz, Sahar; Yurtisigi, Mehmet Kenan; Leclair, Patrick; Gupta, Arunava

We experimentally investigate the structural, magnetic and electrical transport properties of La0.67Sr0.33MnO3 based magnetic tunnel junctions with a SrSnO3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched SrTiO3 barrier, reaching values of up to 350 % at T = 5 K . Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. Our results suggest that by reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future. We gratefully acknowledge financial support via NSF-ECCS Grant No. 1509875.

Fabrication of full high-T sub c superconducting YBa sub 2 Cu sub 3 O sub 7 sub - sub x trilayer junctions using a polishing technique

CERN Document Server

Kuroda, K; Takami, T; Ozeki, T

2003-01-01

We have successfully fabricated full high-T sub c superconducting YBa sub 2 Cu sub 3 O sub 7 sub - sub x (YBCO)/PrBa sub 2 Cu sub 3 O sub 7 sub - sub x (PBCO)/YBCO trilayer junctions, which have a simple device structure, such as a Pb-alloy-based Josephson tunneling junction. It has been demonstrated that a polishing technique is extremely useful in the fabrication process: it is effective in smoothing a coarse surface and gentling the slopes of the edges, or decreasing the slope angles. Owing to the polishing technique, the PBCO barrier layer and the upper YBCO layer have been notably thinned: the thicknesses of these layers are 10 nm and 250 nm, respectively. Junctions with the dimensions of 5 mu m x 5 mu m showed resistively shunted junction-like current-voltage curves with a typical critical current density of 110 A/cm sup 2 at 4.2 K. Furthermore, the operation of superconducting quantum interference devices has been demonstrated. (author)

Fabrication of tunnel junction-based molecular electronics and spintronics devices

International Nuclear Information System (INIS)

Tyagi, Pawan

2012-01-01

Tunnel junction-based molecular devices (TJMDs) are highly promising for realizing futuristic electronics and spintronics devices for advanced logic and memory operations. Under this approach, ∼2.5 nm molecular device elements bridge across the ∼2-nm thick insulator of a tunnel junction along the exposed side edge(s). This paper details the efforts and insights for producing a variety of TJMDs by resolving multiple device fabrication and characterization issues. This study specifically discusses (i) compatibility between tunnel junction test bed and molecular solutions, (ii) optimization of the exposed side edge profile and insulator thickness for enhancing the probability of molecular bridging, (iii) effect of fabrication process-induced mechanical stresses, and (iv) minimizing electrical bias-induced instability after the device fabrication. This research will benefit other researchers interested in producing TJMDs efficiently. TJMD approach offers an open platform to test virtually any combination of magnetic and nonmagnetic electrodes, and promising molecules such as single molecular magnets, porphyrin, DNA, and molecular complexes.

Creation of stable molecular junctions with a custom-designed scanning tunneling microscope.

Science.gov (United States)

Lee, Woochul; Reddy, Pramod

2011-12-02

The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (scanning tunneling microscope that enables the creation of metal-single molecule-metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy-at the single-molecule level-on Au-hexanedithiol-Au, Au-octanedithiol-Au and Au-decanedithiol-Au junctions.

Crossing Over from Attractive to Repulsive Interactions in a Tunneling Bosonic Josephson Junction.

Science.gov (United States)

Spagnolli, G; Semeghini, G; Masi, L; Ferioli, G; Trenkwalder, A; Coop, S; Landini, M; Pezzè, L; Modugno, G; Inguscio, M; Smerzi, A; Fattori, M

2017-06-09

We explore the interplay between tunneling and interatomic interactions in the dynamics of a bosonic Josephson junction. We tune the scattering length of an atomic ^{39}K Bose-Einstein condensate confined in a double-well trap to investigate regimes inaccessible to other superconducting or superfluid systems. In the limit of small-amplitude oscillations, we study the transition from Rabi to plasma oscillations by crossing over from attractive to repulsive interatomic interactions. We observe a critical slowing down in the oscillation frequency by increasing the strength of an attractive interaction up to the point of a quantum phase transition. With sufficiently large initial oscillation amplitude and repulsive interactions, the system enters the macroscopic quantum self-trapping regime, where we observe coherent undamped oscillations with a self-sustained average imbalance of the relative well population. The exquisite agreement between theory and experiments enables the observation of a broad range of many body coherent dynamical regimes driven by tunable tunneling energy, interactions and external forces, with applications spanning from atomtronics to quantum metrology.

Tunneling magnetoresistance in junctions composed of ferromagnets and time-reversal invariant topological superconductors

International Nuclear Information System (INIS)

Yan, Zhongbo; Wan, Shaolong

2016-01-01

Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant topological superconductors without spin-rotation symmetry. Here the physical origin is that when the spin-polarization direction of an injected electron from the ferromagnet lies in the same plane of the spin-polarization direction of Majorana zero modes, the electron will undergo a perfect spin-equal Andreev reflection, while injected electrons with other spin-polarization directions will be partially Andreev reflected and partially normal reflected, which consequently has a lower conductance, and therefore, the magnetoresistance effect emerges. Compared to conventional magnetic tunnel junctions, an unprecedented advantage of the junctions studied here is that arbitrary high tunneling magnetoresistance can be obtained even when the magnetization of the ferromagnets are weak and the insulating tunneling barriers are featureless. Our findings provide a new fascinating mechanism to obtain high tunneling magnetoresistance. (paper)

Soliton excitations in Josephson tunnel junctions

DEFF Research Database (Denmark)

Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

1982-01-01

A detailed numerical study of a sine-Gordon model of the Josephson tunnel junction is compared with experimental measurements on junctions with different L / λJ ratios. The soliton picture is found to apply well on both relatively long (L / λJ=6) and intermediate (L / λJ=2) junctions. We find good...... agreement for the current-voltage characteristics, power output, and for the shape and height of the zero-field steps (ZFS). Two distinct modes of soliton oscillations are observed: (i) a bunched or congealed mode giving rise to the fundamental frequency f1 on all ZFS's and (ii) a "symmetric" mode which...... on the Nth ZFS yields the frequency Nf1 Coexistence of two adjacent frequencies is found on the third ZFS of the longer junction (L / λJ=6) in a narrow range of bias current as also found in the experiments. Small asymmetries in the experimental environment, a weak magnetic field, e.g., is introduced via...

Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

Energy Technology Data Exchange (ETDEWEB)

Dartora, C.A., E-mail: cadartora@eletrica.ufpr.br [Electrical Engineering Department, Federal University of Parana (UFPR), C.P. 19011 Curitiba, 81.531-970 PR (Brazil); Nobrega, K.Z., E-mail: bzuza1@yahoo.com.br [Federal Institute of Education, Science and Technolgy of Maranhão (IFMA), Av. Marechal Castelo Branco, 789, São Luís, 65.076-091 MA (Brazil); Cabrera, G.G., E-mail: cabrera@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), C.P. 6165, Campinas 13.083-970 SP (Brazil)

2016-08-15

Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.

Science.gov (United States)

Wang, Mengxing; Cai, Wenlong; Cao, Kaihua; Zhou, Jiaqi; Wrona, Jerzy; Peng, Shouzhong; Yang, Huaiwen; Wei, Jiaqi; Kang, Wang; Zhang, Youguang; Langer, Jürgen; Ocker, Berthold; Fert, Albert; Zhao, Weisheng

2018-02-14

Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major challenge of current-induced switching in the nanopillars with both a large tunnel magnetoresistance ratio and a low junction resistance is still to be met. Here, we report spin transfer torque switching in nano-scale perpendicular magnetic tunnel junctions with a magnetoresistance ratio up to 249% and a resistance area product as low as 7.0 Ω µm 2 , which consists of atom-thick W layers and double MgO/CoFeB interfaces. The efficient resonant tunnelling transmission induced by the atom-thick W layers could contribute to the larger magnetoresistance ratio than conventional structures with Ta layers, in addition to the robustness of W layers against high-temperature diffusion during annealing. The critical switching current density could be lower than 3.0 MA cm -2 for devices with a 45-nm radius.

Fine structures on zero-field steps in low-loss Josephson tunnel junctions

DEFF Research Database (Denmark)

Monaco, Roberto; Barbara, Paola; Mygind, Jesper

1993-01-01

The first zero-field step in the current-voltage characteristic of intermediate-length, high-quality, low-loss Nb/Al-AlOx/Nb Josephson tunnel junctions has been carefully investigated as a function of temperature. When decreasing the temperature, a number of structures develop in the form...... of regular and slightly hysteretic steps whose voltage position depends on the junction temperature and length. This phenomenon is interesting for the study of nonlinear dynamics and for application of long Josephson tunnel junctions as microwave and millimeter-wavelength oscillators....

Ferroelectric tunnel junctions with multi-quantum well structures

Energy Technology Data Exchange (ETDEWEB)

Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China)

2014-06-02

Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.

Dynamic Tunneling Junctions at the Atomic Intersection of Two Twisted Graphene Edges.

Science.gov (United States)

Bellunato, Amedeo; Vrbica, Sasha D; Sabater, Carlos; de Vos, Erik W; Fermin, Remko; Kanneworff, Kirsten N; Galli, Federica; van Ruitenbeek, Jan M; Schneider, Grégory F

2018-04-11

The investigation of the transport properties of single molecules by flowing tunneling currents across extremely narrow gaps is relevant for challenges as diverse as the development of molecular electronics and sequencing of DNA. The achievement of well-defined electrode architectures remains a technical challenge, especially due to the necessity of high precision fabrication processes and the chemical instability of most bulk metals. Here, we illustrate a continuously adjustable tunneling junction between the edges of two twisted graphene sheets. The unique property of the graphene electrodes is that the sheets are rigidly supported all the way to the atomic edge. By analyzing the tunneling current characteristics, we also demonstrate that the spacing across the gap junction can be controllably adjusted. Finally, we demonstrate the transition from the tunneling regime to contact and the formation of an atomic-sized junction between the two edges of graphene.

Creation of stable molecular junctions with a custom-designed scanning tunneling microscope

International Nuclear Information System (INIS)

Lee, Woochul; Reddy, Pramod

2011-01-01

The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (<1 s), impeding detailed studies of their charge transport characteristics. Here, we report a custom-designed scanning tunneling microscope that enables the creation of metal–single molecule–metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy—at the single-molecule level—on Au–hexanedithiol–Au, Au–octanedithiol–Au and Au–decanedithiol–Au junctions.

First-principles investigation of quantum transport in GeP3 nanoribbon-based tunneling junctions

Science.gov (United States)

Wang, Qiang; Li, Jian-Wei; Wang, Bin; Nie, Yi-Hang

2018-06-01

Two-dimensional (2D) GeP3 has recently been theoretically proposed as a new low-dimensional material [ Nano Lett. 17(3), 1833 (2017)]. In this manuscript, we propose a first-principles calculation to investigate the quantum transport properties of several GeP3 nanoribbon-based atomic tunneling junctions. Numerical results indicate that monolayer GeP3 nanoribbons show semiconducting behavior, whereas trilayer GeP3 nanoribbons express metallic behavior owing to the strong interaction between each of the layers. This behavior is in accordance with that proposed in two-dimensional GeP3 layers. The transmission coefficient T( E) of tunneling junctions is sensitive to the connecting formation between the central monolayer GeP3 nanoribbon and the trilayer GeP3 nanoribbon at both ends. The T( E) value of the bottom-connecting tunneling junction is considerably larger than those of the middle-connecting and top-connecting ones. With increases in gate voltage, the conductances increase for the bottom-connecting and middle-connecting tunneling junctions, but decrease for the top-connecting tunneling junctions. In addition, the conductance decreases exponentially with respect to the length of the central monolayer GeP3 nanoribbon for all the tunneling junctions. I-V curves show approximately linear behavior for the bottom-connecting and middle-connecting structures, but exhibit negative differential resistance for the top-connecting structures. The physics of each phenomenon is analyzed in detail.

Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

Energy Technology Data Exchange (ETDEWEB)

Arai, Miho; Moriya, Rai, E-mail: moriyar@iis.u-tokyo.ac.jp; Yabuki, Naoto; Masubuchi, Satoru [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Ueno, Keiji [Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570 (Japan); Machida, Tomoki, E-mail: tmachida@iis.u-tokyo.ac.jp [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan); Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)

2015-09-07

We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe{sub 0.25}TaS{sub 2}. The vdW interlayer coupling at the Fe-intercalated plane of Fe{sub 0.25}TaS{sub 2} allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material and the vdW junction.

Electrical resistivity of monolayers and bilayers of alkanethiols in tunnel junction with gate electrode

International Nuclear Information System (INIS)

York, Roger L.; Nacionales, David; Slowinski, Krzysztof

2005-01-01

The tunneling resistances of monolayers and bilayers of n-alkanethiols in macroscopic Hg-Hg junctions with an electrochemical gate are reported. The resistances near zero bias calculated per 1 hydrocarbon chain vary from (5 ± 4) x 10 12 Ω for n-nonanethiol to (4 ± 2) x 10 16 Ω for n-octadecanethiol. These values indicate that monolayers of hydrocarbons in Hg-Hg junctions are substantially more resistive as compared to measurements employing microscopic tunnel junctions. The tunneling resistances of monolayer junctions are approximately 1 order of magnitude larger than those of bilayer junctions containing the same number of atoms indicating inefficient electronic coupling across the non-bonded -CH 3 |Hg interface. The symmetric current-voltage curves observed for the asymmetric junctions of Hg-S-(CH 2 ) n -CH 3 |Hg type suggest that these junctions do not behave as molecular diodes. Additional experimental evidence for the nature of the -CH 3 |Hg interface in the Hg-S-(CH 2 ) n -CH 3 |Hg junction is also presented

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

Science.gov (United States)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-06-01

In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

Flicker (1/f) noise in tunnel junction DC SQUIDS

International Nuclear Information System (INIS)

Koch, R.H.; Clarke, J.; Goubau, W.M.; Martinis, J.M.; Pegrum, C.M.; Van Harlingen, D.J.

1983-01-01

We have measured the spectral density of the 1/f voltage noise in current-biased resistively shunted Josephson tunnel junctions and dc SQUIDs. A theory in which fluctuations in the temperature give rise to fluctuations in the critical current and hence in the voltage predicts the magnitude of the noise quite accurately for junctions with areas of about 2 x 10 4 μm 2 , but significantly overestimates the noise for junctions with areas of about 6 μm 2 . DC SQUIDs fabricated from these two types of junctions exhibit substantially more 1/f voltage noise than would be predicted from a model in which the noise arises from critical current fluctuations in the junctions. This result was confirmed by an experiment involving two different bias current and flux modulation schemes, which demonstrated that the predominant 1/f voltage noise arises not from critical current fluctuations, but from some unknown source that can be regarded as an apparent 1/f flux noise. Measurements on five different configurations of dc SQUIDs fabricated with thin-film tunnel junctions and with widely varying areas, inductances, and junction capacitances show that the spectral density of the 1/f equivalent flux noise is roughtly constant, within a factor of three of (10 -10 /f)phi 2 0 Hz -1 . It is emphasized that 1/f flux noise may not be the predominant source of 1/f noise in SQUIDS fabricated with other technologies

Resonant tunnel magnetoresistance in a double magnetic tunnel junction

KAUST Repository

Useinov, Arthur

2011-08-09

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

Superconducting proximity effect in mesoscopic superconductor/normal-metal junctions

CERN Document Server

Takayanagi, H; Toyoda, E

1999-01-01

The superconducting proximity effect is discussed in mesoscopic superconductor/normal-metal junctions. The newly-developed theory shows long-range phase-coherent effect which explaines early experimental results of giant magnetoresistance oscillations in an Andreev interferometer. The theory also shows that the proximity correction to the conductance (PCC) has a reentrant behavior as a function of energy. The reentrant behavior is systematically studied in a gated superconductor-semiconductor junction. A negative PCC is observed in the case of a weak coupling between the normal metal and the external reservoir. Phase coherent ac effect is also observed when rf is irradiated to the junction.

Magnetic tunnel junction thermocouple for thermoelectric power harvesting

Science.gov (United States)

Böhnert, T.; Paz, E.; Ferreira, R.; Freitas, P. P.

2018-05-01

The thermoelectric power generated in magnetic tunnel junctions (MTJs) is determined as a function of the tunnel barrier thickness for a matched electric circuit. This study suggests that lower resistance area product and higher tunnel magnetoresistance will maximize the thermoelectric power output of the MTJ structures. Further, the thermoelectric behavior of a series of two MTJs, a MTJ thermocouple, is investigated as a function of its magnetic configurations. In an alternating magnetic configurations the thermovoltages cancel each other, while the magnetic contribution remains. A large array of MTJ thermocouples could amplify the magnetic thermovoltage signal significantly.

Advanced Metrology for Characterization of Magnetic Tunnel Junctions

DEFF Research Database (Denmark)

Kjær, Daniel

-plane tunneling (CIPT) for characterization of magnetic tunnel junctions (MTJs), which constitutes the key component not only in MRAM but also the read-heads of modern hard disk drives. MTJs are described by their tunnel magnetoresistance (TMR), which is the relative difference of the resistance area products (RA...... of this project has been to provide cheaper, faster and more precise metrology for MTJs. This goal has been achieved in part by the demonstration of a static field CIPT method, which allows us to reduce the measurement time by a factor of 5, by measuring only RA thus excluding TMR. This enhancement is obtained...

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

International Nuclear Information System (INIS)

Parui, Subir; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Casanova, Fèlix; Hueso, Luis E.

2016-01-01

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al 2 O 3 /NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Bedoya-Pinto, Amilcar [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Max Planck Institute of Microstructure Physics, D-06120 Halle (Germany); Sun, Xiangnan [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); National Center for Nanoscience and Technology, 100190 Beijing (China); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

2016-08-01

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

Scaling for quantum tunneling current in nano- and subnano-scale plasmonic junctions.

Science.gov (United States)

Zhang, Peng

2015-05-19

When two conductors are separated by a sufficiently thin insulator, electrical current can flow between them by quantum tunneling. This paper presents a self-consistent model of tunneling current in a nano- and subnano-meter metal-insulator-metal plasmonic junction, by including the effects of space charge and exchange correlation potential. It is found that the J-V curve of the junction may be divided into three regimes: direct tunneling, field emission, and space-charge-limited regime. In general, the space charge inside the insulator reduces current transfer across the junction, whereas the exchange-correlation potential promotes current transfer. It is shown that these effects may modify the current density by orders of magnitude from the widely used Simmons' formula, which is only accurate for a limited parameter space (insulator thickness > 1 nm and barrier height > 3 eV) in the direct tunneling regime. The proposed self-consistent model may provide a more accurate evaluation of the tunneling current in the other regimes. The effects of anode emission and material properties (i.e. work function of the electrodes, electron affinity and permittivity of the insulator) are examined in detail in various regimes. Our simple model and the general scaling for tunneling current may provide insights to new regimes of quantum plasmonics.

Thermal stability analysis of thin film Ni-NiOx-Cr tunnel junctions

International Nuclear Information System (INIS)

Krishnan, S.; Emirov, Y.; Bhansali, S.; Stefanakos, E.; Goswami, Y.

2010-01-01

This research reports on the thermal stability of Ni-NiO x -Cr based Metal-Insulator-Metal (MIM) junction. Effect of annealing (250 to 400 o C) on the electrical and physical transport properties of this MIM stack was understood to determine the thermal budget allowable when using these diodes. MIM tunnel junctions were fabricated by sputtering and the NiO x was formed through reactive sputtering. The performance of the tunnel junctions after exposure to elevated temperatures was investigated using current-voltage measurements. This was correlated to the structural properties of the interfaces at different temperatures, characterized by Atomic Force Microscopy, X-ray Diffraction and Transmission Electron Microscopy (TEM). MIM tunnel junctions annealed up to 350 o C demonstrated satisfactory current-voltage characteristics and sensitivity. MIM junctions exhibited improved electrical performance as they were heated to 250 o C (sensitivity of 42 V -1 and a zero-bias resistance of ∼300 Ω) due to improved crystallization of the layers within the stack. At temperatures over 350 o C, TEM and Energy Dispersive Spectra confirmed a breakdown of the MIM structure due to interdiffusion.

Rectified tunneling current response of bio-functionalized metal-bridge-metal junctions.

Science.gov (United States)

Liu, Yaqing; Offenhäusser, Andreas; Mayer, Dirk

2010-01-15

Biomolecular bridged nanostructures allow direct electrical addressing of electroactive biomolecules, which is of interest for the development of bioelectronic and biosensing hybrid junctions. In the present paper, the electroactive biomolecule microperoxidase-11 (MP-11) was integrated into metal-bridge-metal (MBM) junctions assembled from a scanning tunneling microscope (STM) setup. Before immobilization of MP-11, the Au working electrode was first modified by a self-assembled monolayer of 1-undecanethiol (UDT). A symmetric and potential independent response of current-bias voltage (I(t)/V(b)) was observed for the Au (substrate)/UDT/Au (tip) junction. However, the I(t)/V(b) characteristics became potential dependent and asymmetrical after binding of MP-11 between the electrodes of the junction. The rectification ratio of the asymmetric current response varies with gate electrode modulation. A resonant tunneling process between metal electrode and MP-11 enhances the tunneling current and is responsible for the observed rectification. Our investigations demonstrated that functional building blocks of proteins can be reassembled into new conceptual devices with operation modes deviating from their native function, which could prove highly useful in the design of future biosensors and bioelectronic devices. Copyright 2009 Elsevier B.V. All rights reserved.

Microwave oscillator using arrays of long Josephson junctions

International Nuclear Information System (INIS)

Pagano, S.; Monaco, R.; Costabile, G.

1989-01-01

The authors report on measurements performed on integrated superconducting devices based on arrays of long Josephson tunnel junctions operating in the resonant fluxon oscillation regime (i.e. biased on the Zero Field Steps). The electromagnetic coupling among the junction causes a mutual phase-locking of the fluxon oscillations with a corresponding increase of the emitted power and a decrease of the signal linewidth. This phase-locked state can be controlled by means of an external dc bias current and magnetic field. The effect of the generated microwave signal has been observed on a small Josephson tunnel junction coupled to the array via a microstrip transmission line. The feasibility of the reported devices as local oscillators in an integrated microwave Josephson receiver is discussed

Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions.

Science.gov (United States)

Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S; Saeys, Mark; Yang, Hyunsoo

2014-09-30

While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical strain, achieving an enhancement factor of ~2 in the experimental tunneling magnetoresistance (TMR) ratio. We further correlate this strain-enhanced TMR with coherent spin tunneling through the MgO barrier. Moreover, the strain-enhanced TMR is analyzed using non-equilibrium Green's function (NEGF) quantum transport calculations. Our results help elucidate the TMR mechanism at the atomic level and can provide a new way to enhance, as well as tune, the quantum properties in nanoscale materials and devices.

Electron tunneling measurements in LaSrCuO and YBaCuO

International Nuclear Information System (INIS)

Moreland, J.; Ekin, J.W.; Goodrich, L.F.; Capobianco, T.E.; Clark, A.F.

1987-01-01

The break junction technique whereby vacuum tunneling occurs within the fracture of a bulk sample is used to study the LaSrCuO and YBaCuO perovskite superconductors. Structure in the current versus voltage characteristics is reminiscent of previous quasiparticle curves obtained for BCS superconducting materials. Some curves have anomalous qualities, including large dips in the junction conductance with increasing voltage just above a well defined tunneling gap edge linearly increasing junction conductance with an applied bias, along with features occurring near the voltage intervals with the 1, 3, 5 pattern

The study of superconducting order parameter dynamics

International Nuclear Information System (INIS)

Goldman, A.M.

1988-01-01

Flux quantization experiments have demonstrated the importance of long range phase coherence in the description of the superconducting state, an idea originally proposed as an integral part of the phenomenological theory of the Meissner-Ochsenfeld effect. The most striking experimental demonstration of the phase coherence of the superconducting state is that the maximum dc Josephson current in a thin-film tunneling junction exhibits a Fraunhofer-like dependence on magnetic field

Josephson junctions of multiple superconducting wires

Science.gov (United States)

Deb, Oindrila; Sengupta, K.; Sen, Diptiman

2018-05-01

We study the spectrum of Andreev bound states and Josephson currents across a junction of N superconducting wires which may have s - or p -wave pairing symmetries and develop a scattering matrix based formalism which allows us to address transport across such junctions. For N ≥3 , it is well known that Berry curvature terms contribute to the Josephson currents; we chart out situations where such terms can have relatively large effects. For a system of three s -wave or three p -wave superconductors, we provide analytic expressions for the Andreev bound-state energies and study the Josephson currents in response to a constant voltage applied across one of the wires; we find that the integrated transconductance at zero temperature is quantized to integer multiples of 4 e2/h , where e is the electron charge and h =2 π ℏ is Planck's constant. For a sinusoidal current with frequency ω applied across one of the wires in the junction, we find that Shapiro plateaus appear in the time-averaged voltage across that wire for any rational fractional multiple (in contrast to only integer multiples in junctions of two wires) of 2 e /(ℏ ω ) . We also use our formalism to study junctions of two p -wave and one s -wave wires. We find that the corresponding Andreev bound-state energies depend on the spin of the Bogoliubov quasiparticles; this produces a net magnetic moment in such junctions. The time variation of these magnetic moments may be controlled by an external voltage applied across the junction. We discuss experiments which may test our theory.

Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

KAUST Repository

Zhang, Kun; Cao, Yan-ling; Fang, Yue-wen; Li, Qiang; Zhang, Jie; Duan, Chun-gang; Yan, Shi-shen; Tian, Yu-feng; Huang, Rong; Zheng, Rong-kun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, Liang-mo

2015-01-01

, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/Co

Calibration of tip and sample temperature of a scanning tunneling microscope using a superconductive sample

Energy Technology Data Exchange (ETDEWEB)

Stocker, Matthias; Pfeifer, Holger; Koslowski, Berndt, E-mail: berndt.koslowski@uni-ulm.de [Institute of Solid State Physics, University of Ulm, D-89069 Ulm (Germany)

2014-05-15

The temperature of the electrodes is a crucial parameter in virtually all tunneling experiments. The temperature not only controls the thermodynamic state of the electrodes but also causes thermal broadening, which limits the energy resolution. Unfortunately, the construction of many scanning tunneling microscopes inherits a weak thermal link between tip and sample in order to make one side movable. Such, the temperature of that electrode is badly defined. Here, the authors present a procedure to calibrate the tip temperature by very simple means. The authors use a superconducting sample (Nb) and a standard tip made from W. Due to the asymmetry in the density of states of the superconductor (SC)—normal metal (NM) tunneling junction, the SC temperature controls predominantly the density of states while the NM controls the thermal smearing. By numerically simulating the I-V curves and numerically optimizing the tip temperature and the SC gap width, the tip temperature can be accurately deduced if the sample temperature is known or measureable. In our case, the temperature dependence of the SC gap may serve as a temperature sensor, leading to an accurate NM temperature even if the SC temperature is unknown.

Calibration of tip and sample temperature of a scanning tunneling microscope using a superconductive sample

International Nuclear Information System (INIS)

Stocker, Matthias; Pfeifer, Holger; Koslowski, Berndt

2014-01-01

The temperature of the electrodes is a crucial parameter in virtually all tunneling experiments. The temperature not only controls the thermodynamic state of the electrodes but also causes thermal broadening, which limits the energy resolution. Unfortunately, the construction of many scanning tunneling microscopes inherits a weak thermal link between tip and sample in order to make one side movable. Such, the temperature of that electrode is badly defined. Here, the authors present a procedure to calibrate the tip temperature by very simple means. The authors use a superconducting sample (Nb) and a standard tip made from W. Due to the asymmetry in the density of states of the superconductor (SC)—normal metal (NM) tunneling junction, the SC temperature controls predominantly the density of states while the NM controls the thermal smearing. By numerically simulating the I-V curves and numerically optimizing the tip temperature and the SC gap width, the tip temperature can be accurately deduced if the sample temperature is known or measureable. In our case, the temperature dependence of the SC gap may serve as a temperature sensor, leading to an accurate NM temperature even if the SC temperature is unknown

Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions

OpenAIRE

Loong, Li Ming; Qiu, Xuepeng; Neo, Zhi Peng; Deorani, Praveen; Wu, Yang; Bhatia, Charanjit S.; Saeys, Mark; Yang, Hyunsoo

2014-01-01

While the effects of lattice mismatch-induced strain, mechanical strain, as well as the intrinsic strain of thin films are sometimes detrimental, resulting in mechanical deformation and failure, strain can also be usefully harnessed for applications such as data storage, transistors, solar cells, and strain gauges, among other things. Here, we demonstrate that quantum transport across magnetic tunnel junctions (MTJs) can be significantly affected by the introduction of controllable mechanical...

Josephson tunnel junctions in a magnetic field gradient

DEFF Research Database (Denmark)

Monaco, R.; Mygind, Jesper; Koshelets, V.P.

2011-01-01

We measured the magnetic field dependence of the critical current of high-quality Nb-based planar Josephson tunnel junctions in the presence of a controllable nonuniform field distribution. We found skewed and slowly changing magnetic diffraction patterns quite dissimilar from the Fraunhofer...

Local tunneling spectroscopy of a Nb/InAs/Nb superconducting proximity system with a scanning tunneling microscope

International Nuclear Information System (INIS)

Inoue, K.; Takayanagi, H.

1991-01-01

Local tunneling spectroscopy for a Nb/In/As/Nb superconducting proximity system was demonstrated with a low-temperature scanning tunneling microscope. It is found that the local electron density of states in the InAs region is spatially modulated by the neighboring superconductor Nb

Large positive spin polarization and giant inverse tunneling magnetoresistance in Fe/PbTiO3/Fe multiferroic tunnel junction

International Nuclear Information System (INIS)

Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min

2014-01-01

We perform first-principles electronic structure and spin-dependent transport calculations of a multiferroic tunnel junction (MFTJ) with an epitaxial Fe/PbTiO 3 /Fe heterostructure. We predict a large positive spin-polarization (SP) and an intriguing giant inverse tunneling magnetoresistance (TMR) ratio in this tunnel junction. We demonstrate that the tunneling properties are determined by ferroelectric (FE) polarization screening and electronic reconstruction at the interface with lower electrostatic potential. The intricate complex band structure of PbTiO 3 , in particular the lowest decay rates concerning Pb 6p z and Ti 3d z2 states near the Γ ¯ point, gives rise to the large positive SP of the tunneling current in the parallel magnetic configuration. However, the giant inverse TMR ratio is attributed to the minority-spin electrons of the interfacial Ti 3d xz +3d yz orbitals which have considerably weight in the extended area around the Γ ¯ point at the Fermi energy and causes remarkable contributions to the conductance in the antiparallel magnetic configuration. - Highlights: • We study spin-dependent tunneling in Fe/PbTiO 3 /Fe multiferroic tunnel junction. • We find a large positive spin polarization in the parallel magnetic configuration. • An intriguing giant inverse TMR ratio (about −2000%) is predicted. • Complex band structure of PbTiO 3 causes the large positive spin polarization. • Negative TMR is due to minority-spin electrons of interfacial Ti d xz +d yz orbitals

InAs/Si Hetero-Junction Nanotube Tunnel Transistors

KAUST Repository

Hanna, Amir; Fahad, Hossain M.; Hussain, Muhammad Mustafa

2015-01-01

Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

InAs/Si Hetero-Junction Nanotube Tunnel Transistors

KAUST Repository

Hanna, Amir

2015-04-29

Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

Science.gov (United States)

Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

2017-10-26

The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

Comparison of band-to-band tunneling models in Si and Si—Ge junctions

International Nuclear Information System (INIS)

Jiao Yipeng; Wang Taihuan; Wei Kangliang; Du Gang; Liu Xiaoyan

2013-01-01

We compared several different band-to-band tunneling (BTBT) models with both Sentaurus and the two-dimensional full-band Monte Carlo simulator in Si homo-junctions and Si—Ge hetero-junctions. It was shown that in Si homo-junctions, different models could achieve similar results. However, in the Si—Ge hetero-junctions, there were significant differences among these models at high reverse biases (over 2 V). Compared to the nonlocal model, the local models in Sentaurus underrated the BTBT rate distinctly, and the Monte Carlo method was shown to give a better approximation. Additionally, it was found that in the Si region near the interface of the Si—Ge hetero-junctions, the direct tunneling rates increased largely due to the interaction of the band structures of Si and Ge. (semiconductor physics)

Fabrication of sub-micron whole waffer SIS tunnel junctions for millimeter wave mixers

International Nuclear Information System (INIS)

Huq, S.E.; Blamire, M.G.; Evetts, J.E.; Hasko, D.G.; Ahmed, H.

1991-01-01

As a part of a programme for the development of a space-qualified sub-mm-wave mixer operating in the region of one terahertz we have been developing the processes required for the fabrication of submicron whole wafer tunnel junctions. Using the self-aligned whole-wafer process (SAWW) with electron beam lithography we have been able to reliably fabricate high quality (V m > 20 mV) submicron tunnel junctions from whole wafer Nb/AlO x /Nb structures. In particular we show that the junction quality is independent of size down to 0.3 μm 2 junction area. The problems of film stress, anodization, registration for electron beam lithography and lift-off, which limit the yield of good quality sub-micron scale junctions are addressed in this paper

Impact of semiconducting electrodes on the electroresistance of ferroelectric tunnel junctions

Science.gov (United States)

Asa, M.; Bertacco, R.

2018-02-01

Ferroelectric tunnel junctions are promising candidates for the realization of energy-efficient digital memories and analog memcomputing devices. In this work, we investigate the impact of a semiconducting layer in series to the junction on the sign of electroresistance. To this scope, we compare tunnel junctions fabricated out of Pt/BaTiO3/La1/3Sr2/3MnO3 (LSMO) and Pt/BaTiO3/Nb:SrTiO3 (Nb:STO) heterostructures, displaying an opposite sign of the electroresistance. By capacitance-voltage profiling, we observe a behavior typical of Metal-Oxide-Semiconductor tunnel devices in both cases but compatible with the opposite sign of charge carriers in the semiconducting layer. While Nb:STO displays the expected n-type semiconducting character, metallic LSMO develops an interfacial p-type semiconducting layer. The different types of carriers at the semiconducting interfaces and the modulation of the depleted region by the ferroelectric charge have a deep impact on electroresistance, possibly accounting for the different sign observed in the two systems.

Quantum decrease of capacitance in a nanometer-sized tunnel junction

Science.gov (United States)

Untiedt, C.; Saenz, G.; Olivera, B.; Corso, M.; Sabater, C.; Pascual, J. I.

2013-03-01

We have studied the capacitance of the tunnel junction defined by the tip and sample of a Scanning Tunnelling Microscope through the measurement of the electrostatic forces and impedance of the junction. A decrease of the capacitance when a tunnel current is present has shown to be a more general phenomenon as previously reported in other systems. On another hand, an unexpected reduction of the capacitance is also observed when increasing the applied voltage above the work function energy of the electrodes to the Field Emission (FE) regime, and the decrease of capacitance due to a single FE-Resonance has been characterized. All these effects should be considered when doing measurements of the electronic characteristics of nanometer-sized electronic devices and have been neglected up to date. Spanish government (FIS2010-21883-C02-01, CONSOLIDER CSD2007-0010), Comunidad Valenciana (ACOMP/2012/127 and PROMETEO/2012/011)

Josephson phase qubit circuit for the evaluation of advanced tunnel barrier materials

Energy Technology Data Exchange (ETDEWEB)

Kline, Jeffrey S; Oh, Seongshik; Pappas, David P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Wang Haohua; Martinis, John M [Department of Physics, University of California, Santa Barbara, CA 93106 (United States)], E-mail: klinej@nist.gov

2009-01-15

We have found that crystalline Josephson junctions have problems with the control of critical current density that decrease the circuit yield. We present a superconducting quantum bit circuit designed to accommodate a factor of five variation in critical current density from one fabrication run to the next. The new design enables the evaluation of advanced tunnel barrier materials for superconducting quantum bits. Using this circuit design, we compare the performance of Josephson phase qubits fabricated with MgO and Al{sub 2}O{sub 3} advanced crystalline tunnel barriers to AlO{sub x} amorphous tunnel barrier qubits.

Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

KAUST Repository

Useinov, Arthur

2011-10-22

In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.

Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier

Science.gov (United States)

Krishna Narayananellore, Sai; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji

2018-04-01

We fabricated Fe/LiF/Fe magnetic tunnel junctions (MTJs) by molecular beam epitaxy on a MgO(001) substrate, where LiF is an insulating tunnel barrier with the same crystal structure as MgO (rock-salt type). Crystallographical studies such as transmission electron microscopy and nanobeam electron diffraction observations revealed that the LiF tunnel barrier is single-crystalline and has a LiF(001)[100] ∥ bottom Fe(001)[110] crystal orientation, which is constructed in the same manner as MgO(001) on Fe(001). Also, the in-plane lattice mismatch between the LiF tunnel barrier and the Fe bottom electrode was estimated to be small (about 0.5%). Despite such advantages for the tunnel barrier of the MTJ, the observed tunnel magnetoresistance (MR) ratio was low (˜6% at 20 K) and showed a significant decrease with increasing temperature (˜1% at room temperature). The results imply that indirect tunneling and/or thermally excited carriers in the LiF tunnel barrier, in which the current basically is not spin-polarized, play a major role in electrical transport in the MTJ.

Microscopic theory of the Coulomb based exchange coupling in magnetic tunnel junctions.

Science.gov (United States)

Udalov, O G; Beloborodov, I S

2017-05-04

We study interlayer exchange coupling based on the many-body Coulomb interaction between conduction electrons in magnetic tunnel junction. This mechanism complements the known interaction between magnetic layers based on virtual electron hopping (or spin currents). We find that these two mechanisms have different behavior on system parameters. The Coulomb based coupling may exceed the hopping based exchange. We show that the Coulomb based exchange interaction, in contrast to the hopping based coupling, depends strongly on the dielectric constant of the insulating layer. The dependence of the interlayer exchange interaction on the dielectric properties of the insulating layer in magnetic tunnel junction is similar to magneto-electric effect where electric and magnetic degrees of freedom are coupled. We calculate the interlayer coupling as a function of temperature and electric field for magnetic tunnel junction with ferroelectric layer and show that the exchange interaction between magnetic leads has a sharp decrease in the vicinity of the ferroelectric phase transition and varies strongly with external electric field.

Scanning tunneling spectroscopy of Co adsorbates on superconducting Pb nanostructures

Energy Technology Data Exchange (ETDEWEB)

Decker, Regis; Caminale, Michael; Oka, Hirofumi; Stepniak, Agnieszka; Leon Vanegas, Augusto A.; Sander, Dirk; Kirschner, Juergen [Max-Planck-Institut fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle (Germany)

2015-07-01

Superconductivity in low-dimensional structures has become an active research area. In order to understand the superconducting pairing, long-standing work has been devoted to the pair breaking effect, where magnetic impurities break Cooper pair singlets. We performed scanning tunneling spectroscopy at low temperature on Co adsorbates on superconducting Pb nanoislands. On the Co adsorbates, we observe spectral features in the superconductor's energy gap, which we attribute to magnetic impurity induced bound states, a hallmark of the pair breaking effect. We discuss the response of the superconducting islands to the presence of Co adsorbates.

InP tunnel junctions for InP/InGaAs tandem solar cells

Science.gov (United States)

Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

1996-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

Theory of spin-dependent tunnelling in magnetic junctions

International Nuclear Information System (INIS)

Mathon, J.

2002-01-01

Rigorous theory of the tunnelling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is described. It is first applied to calculate the TMR of two Co electrodes separated by a vacuum gap. The calculated TMR ratio reaches ∼65% in the tunnelling regime but can be as high as 280% in the metallic regime when the vacuum gap is of the order of the Co interatomic distance (abrupt domain wall). It is also shown that the spin polarization P of the tunnelling current is negative in the metallic regime but becomes positive P∼35% in the tunnelling regime. Calculation of the TMR of an epitaxial Fe/MgO/Fe(001) junction is also described. The calculated optimistic TMR ratio is in excess of 1000% for an MgO barrier of ∼20 atomic planes and the spin polarization of the tunnelling current is positive for all MgO thicknesses. It is also found that spin-dependent tunnelling in an Fe/MgO/Fe(001) junction is not entirely determined by states at the Γ point (k parallel = 0) even for MgO thicknesses as large as ∼20 atomic planes. Finally, it is demonstrated that the TMR ratio calculated from the Kubo formula remains non-zero when one of the Co electrodes is covered with a copper layer. It is shown that non-zero TMR is due to quantum well states in the Cu layer which do not participate in transport. Since these only occur in the down-spin channel, their loss from transport creates a spin asymmetry of electrons tunnelling from a Cu interlayer, i.e. non-zero TMR. Numerical modelling is used to show that diffuse scattering from a random distribution of impurities in the barrier may cause quantum well states to evolve into propagating states, in which case the spin asymmetry of the non-magnetic layer is lost and with it the TMR. (author)

Tunneling rates in electron transport through double-barrier molecular junctions in a scanning tunneling microscope

OpenAIRE

Nazin, G. V.; Wu, S. W.; Ho, W.

2005-01-01

The scanning tunneling microscope enables atomic-scale measurements of electron transport through individual molecules. Copper phthalocyanine and magnesium porphine molecules adsorbed on a thin oxide film grown on the NiAl(110) surface were probed. The single-molecule junctions contained two tunneling barriers, vacuum gap, and oxide film. Differential conductance spectroscopy shows that electron transport occurs via vibronic states of the molecules. The intensity of spectral peaks correspondi...

L10-MnGa based magnetic tunnel junction for high magnetic field sensor

Science.gov (United States)

Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wang, H. L.; Wang, X. L.; Wei, D. H.; Zhao, J. H.

2017-07-01

We report on the investigation of the magnetic tunnel junction structure designed for high magnetic field sensors with a perpendicularly magnetized L10-MnGa reference layer and an in-plane magnetized Fe sensing layer. A large linear tunneling magnetoresistance ratio up to 27.4% and huge dynamic range up to 5600 Oe have been observed at 300 K, with a low nonlinearity of 0.23% in the optimized magnetic tunnel junction (MTJ). The field response of tunneling magnetoresistance is discussed to explain the field sensing properties in the dynamic range. These results indicate that L10-MnGa based orthogonal MTJ is a promising candidate for a high performance magnetic field sensor with a large dynamic range, high endurance and low power consumption.

Characterization of the insulator barrier and the superconducting transition temperature in GdBa{sub 2}Cu{sub 3}O{sub 7−δ}/BaTiO{sub 3} bilayers for application in tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Navarro, H., E-mail: henrynavarro@cab.cnea.gov.ar; Sirena, M.; Haberkorn, N. [Instituto Balseiro, Universidad Nacional de Cuyo and CNEA, 8400 Bariloche (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica. Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Yang, Ilkyu [Department of Physics, Pohang University of Science and Technology, Pohang (Korea, Republic of); Kim, Jeehoon [Department of Physics, Pohang University of Science and Technology, Pohang (Korea, Republic of); CALDES, Institute for Basic Science, Pohang (Korea, Republic of)

2015-07-28

The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO{sub 3} tunnel barrier deposited on a 16 nm thick GdBa{sub 2}Cu{sub 3}O{sub 7−δ} thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO{sub 3} barrier thickness between 1.6 and 4 nm. The BaTiO{sub 3} layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the applied voltage). The GdBa{sub 2}Cu{sub 3}O{sub 7−δ} electrode is totally covered by a BaTiO{sub 3} thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO{sub 3} top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO{sub 3} thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa{sub 2}Cu{sub 3}O{sub 7−δ}. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO{sub 3} barrier)

Quantum memristor in a superconducting circuit

Science.gov (United States)

Salmilehto, Juha; Sanz, Mikel; di Ventra, Massimiliano; Solano, Enrique

Memristors, resistive elements that retain information of their past, have garnered interest due to their paradigm-changing potential in information processing and electronics. The emergent hysteretic behaviour allows for novel architectural applications and has recently been classically demonstrated in a simplified superconducting setup using the phase-dependent conductance in the tunnel-junction-microscopic model. In this contribution, we present a truly quantum model for a memristor constructed using established elements and techniques in superconducting nanoelectronics, and explore the parameters for feasible operation as well as refine the methods for quantifying the memory retention. In particular, the memristive behaviour is shown to arise from quasiparticle-induced tunneling in the full dissipative model and can be observed in the phase-driven tunneling current. The relevant hysteretic behaviour should be observable using current state-of-the-art measurements for detecting quasiparticle excitations. Our theoretical findings constitute the first quantum memristor in a superconducting circuit and act as the starting point for designing further circuit elements that have non-Markovian characteristics The authors acknowledge support from the CCQED EU project and the Finnish Cultural Foundation.

Superconductor-Insulator transition in a single Josephson junction

International Nuclear Information System (INIS)

Sonin, E.B.; PenttilA, J.S.; Parts, O.; Hakonen, P.J.; Paalanen, M.A.

1999-01-01

For ultra small Josephson junctions, when quantum effects become important, dissipative phase transition (DPT) has been predicted. The physical origin of this transition is the suppression of macroscopic quantum tunneling of the phase by tile interaction with dissipative quantum-mechanical environment. Macroscopic quantum tunneling destroys superconductivity of a junction, whereas suppression of tunneling restores superconductivity. Hence, this transition is often called a superconductor-insulator transition (SIT). SIT was predicted for various systems, but its detection in a single Josephson junction is of principal importance since it is the simplest system where this transition is expected, without any risk of being masked by other physical processes, as is possible in more complicated systems like regular or' random Josephson junction arrays. In this Letter we present results of our measurements on R = dV/dI vs. I curves, for a variety of single small isolated Josephson junctions, shunted and un shunted, with different values of capacitance C and normal state tunneling resistance RT. We have detected a crossover. between two types of RI-curves with an essentially different behavior at small currents. On the basis of this crossover, we are able to map out the whole phase diagram for a Josephson junction. The position of the observed phase boundary did not agree with that expected from the original theory. However, the theory revised to take into account a finite accuracy of our voltage measurements (viz., the minimum voltage which we are able to detect), explains well the observed phase diagram. Our important conclusion is that the concept of dissipative phase transition (DPT) and superconductor-insulator transition (SIT) are not completely identical as assumed before. Both are accompanied by the sign change of the thermo resistance, which is traditionally considered as a signature of SIT. Thus any DPT is SIT, but not vice versa. We argue that the real signature

Cotunneling enhancement of magnetoresistance in double magnetic tunnel junctions with embedded superparamagnetic NiFe nanoparticles

International Nuclear Information System (INIS)

Dempsey, K.J.; Arena, D.; Hindmarch, A.T.; Wei, H.X.; Qin, Q.H.; Wen, Z.C.; Wang, W.X.; Vallejo-Fernandez, G.; Han, X.F.; Marrows, C.H.

2010-01-01

Temperature and bias voltage-dependent transport characteristics are presented for double magnetic tunnel junctions (DMTJs) with self-assembled NiFe nanoparticles embedded between insulating alumina barriers. The junctions with embedded nanoparticles are compared to junctions with a single barrier of comparable size and growth conditions. The embedded particles are characterized using x-ray absorption spectroscopy, transmission electron microscopy, and magnetometry techniques, showing that they are unoxidized and remain superparamagnetic to liquid helium temperatures. The tunneling magnetoresistance (TMR) for the DMTJs is lower than the control samples, however, for the DMTJs an enhancement in TMR is seen in the Coulomb blockade region. Fitting the transport data in this region supports the theory that cotunneling is the dominant electron transport process within the Coulomb blockade region, sequential tunneling being suppressed. We therefore see an enhanced TMR attributed to the change in the tunneling process due to the interplay of the Coulomb blockade and spin-dependent tunneling through superparamagnetic nanoparticles, and develop a simple model to quantify the effect, based on the fact that our nanoparticles will appear blocked when measured on femtosecond tunneling time scales.

Charge transport in junctions between d-wave superconductors

International Nuclear Information System (INIS)

Barash, Y.S.; Galaktionov, A.V.; Zaikin, A.D.

1995-01-01

We develop a microscopic analysis of superconducting and dissipative currents in junctions between superconductors with d-wave symmetry of the order parameter. We study the proximity effect in such superconductors and show that for certain crystal orientations the superconducting order parameter can be essentially suppressed in the vicinity of a nontransparent specularly reflecting boundary. This effect strongly influences the value and the angular dependence of the dc Josephson current j S . At T∼T c it leads to a crossover between j S ∝T c -T and j S ∝(T c -T) 2 respectively for homogeneous and nonhomogeneous distribution of the order parameter in the vicinity of a tunnel junction. We show that at low temperatures the current-phase relation j S (cphi) for superconductor--normal-metal--superconductor junctions and short weak links between d-wave superconductors is essentially nonharmonic and contains a discontinuity at cphi=0. This leads to further interesting features of such systems which can be used for pairing symmetry tests in high-temperature superconductors (HTSC). We also investigated the low-temperature I-V curves of normal-metal--superconductor and superconductor-superconductor tunnel junctions and demonstrated that depending on the junction type and crystal orientation these curves show zero-bias anomalies I∝V 2 , I∝V 2 ln(1/V), and I∝V 3 caused by the gapless behavior of the order parameter in d-wave superconductors. Many of our results agree well with recent experimental findings for HTSC compounds

Spin-Polarization in Quasi-Magnetic Tunnel Junctions

Science.gov (United States)

Xie, Zheng-Wei; Li, Ling

2017-05-01

Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and 16ZA0047, and the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No 12TD008.

Tunneling spectroscopy of quasiparticle bound states in a spinful Josephson junction.

Science.gov (United States)

Chang, W; Manucharyan, V E; Jespersen, T S; Nygård, J; Marcus, C M

2013-05-24

The spectrum of a segment of InAs nanowire, confined between two superconducting leads, was measured as function of gate voltage and superconducting phase difference using a third normal-metal tunnel probe. Subgap resonances for odd electron occupancy-interpreted as bound states involving a confined electron and a quasiparticle from the superconducting leads, reminiscent of Yu-Shiba-Rusinov states-evolve into Kondo-related resonances at higher magnetic fields. An additional zero-bias peak of unknown origin is observed to coexist with the quasiparticle bound states.

Ultrafast demagnetization enhancement in CoFeB/MgO/CoFeB magnetic tunneling junction driven by spin tunneling current.

Science.gov (United States)

He, Wei; Zhu, Tao; Zhang, Xiang-Qun; Yang, Hai-Tao; Cheng, Zhao-Hua

2013-10-07

The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two CoFeB layers via the tunneling of hot electrons through the MgO barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electrons tunneling current. It opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions.

MgB2 energy gap determination by scanning tunnelling spectroscopy

International Nuclear Information System (INIS)

Heitmann, T W; Bu, S D; Kim, D M; Choi, J H; Giencke, J; Eom, C B; Regan, K A; Rogado, N; Hayward, M A; He, T; Slusky, J S; Khalifah, P; Haas, M; Cava, R J; Larbalestier, D C; Rzchowski, M S

2004-01-01

We report scanning tunnelling spectroscopy (STS) measurements of the gap properties of both ceramic MgB 2 and c-axis oriented epitaxial MgB 2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunnelling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-insulator-superconductor (N-I-S) junctions. We find a gap δ = 2.2-2.8 meV, with spectral features and temperature dependence that are consistent between S-I-S junction types. In addition, we observe evidence of a second, larger gap, δ 7.2 meV, consistent with a proposed two-band model

Static properties of small Josephson tunnel junctions in an oblique magnetic field

DEFF Research Database (Denmark)

Monaco, Roberto; Aarøe, Morten; Mygind, Jesper

2009-01-01

We have carried out a detailed experimental investigation of the static properties of planar Josephson tunnel junctions in presence of a uniform external magnetic field applied in an arbitrary orientation with respect to the barrier plane. We considered annular junctions, as well as rectangular...

Universal tunneling behavior in technologically relevant P/N junction diodes

International Nuclear Information System (INIS)

Solomon, Paul M.; Jopling, Jason; Frank, David J.; D'Emic, Chris; Dokumaci, O.; Ronsheim, P.; Haensch, W.E.

2004-01-01

Band-to-band tunneling was studied in ion-implanted P/N junction diodes with profiles representative of present and future silicon complementary metal-oxide-silicon (CMOS) field effect transistors. Measurements were done over a wide range of temperatures and implant parameters. Profile parameters were derived from analysis of capacitance versus voltage characteristics, and compared to secondary-ion mass spectroscopy analysis. When the tunneling current was plotted against the effective tunneling distance (tunneling distance corrected for band curvature) a quasi-universal exponential reduction of tunneling current versus, tunneling distance was found with an attenuation length of 0.38 nm, corresponding to a tunneling effective mass of 0.29 times the free electron mass (m 0 ), and an extrapolated tunneling current at zero tunnel distance of 5.3x10 7 A/cm 2 at 300 K. These results are directly applicable for predicting drain to substrate currents in CMOS transistors on bulk silicon, and body currents in CMOS transistors in silicon-on-insulator

Development of superconducting tunnel junction arrays for astronomical observations

NARCIS (Netherlands)

Martin, D.

2007-01-01

The original S-CAM1 and 2 systems were a first successful demonstration of a camera for optical astronomy based on superconducting sensors. However, a number of shortcomings were identified during the observing campaigns at the William Herschel Telescope at La Palma that triggered this work. As the

Magnetoresistance in Co/AlO sub x /Co tunnel junction arrays

CERN Document Server

Urech, M; Haviland, D B

2002-01-01

Lateral arrays of Co/AlO sub x /Co junctions with dimensions down to 60 nm and inter-junction separations approx 60-100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe approx 10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.

Resonator coupled Josephson junctions; parametric excitations and mutual locking

DEFF Research Database (Denmark)

Jensen, H. Dalsgaard; Larsen, A.; Mygind, Jesper

1991-01-01

Self-pumped parametric excitations and mutual locking in systems of Josephson tunnel junctions coupled to multimode resonators are reported. For the very large values of the coupling parameter, obtained with small Nb-Al2O3-Nb junctions integrated in superconducting microstrip resonators, the DC I......-V characteristic shows an equidistant series of current steps generated by subharmonic pumping of the fundamental resonator mode. This is confirmed by measurement of frequency and linewidth of the emitted Josephson radiation...

Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

KAUST Repository

Zhang, Kun

2015-01-01

Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

Directory of Open Access Journals (Sweden)

B. Fang

2015-06-01

Full Text Available We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices.

Coherence in a transmon qubit with epitaxial tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Weides, Martin [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Karlsruhe Institute of Technology (Germany); Kline, Jeffrey; Vissers, Michael; Sandberg, Martin; Pappas, David [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Wisbey, David [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Saint Louis University, St. Louis, Missouri 63103 (United States); Johnson, Blake; Ohki, Thomas [Raytheon BBN Technologies, Cambridge, Massachusetts 02138 (United States)

2012-07-01

Transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors were developed. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T{sub 1} is.72-.86 {mu} sec and the ensemble dephasing time T{sub 2}{sup *} is slightly larger than T{sub 1}. The dephasing time T{sub 2} (1.36 {mu} sec) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit's inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements.

Measured Temperature Dependence of the cos-phi Conductance in Josephson Tunnel Junctions

DEFF Research Database (Denmark)

Sørensen, O. H.; Mygind, Jesper; Pedersen, Niels Falsig

1977-01-01

The temperature dependence of the cosϕ conductance in Sn-O-Sn Josephson tunnel junctions has been measured just below the critical temperature, Tc. From the resonant microwave response at the junction plasma frequency as the temperature is decreased from Tc it is deduced that the amplitude of the...

Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

Science.gov (United States)

Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

2015-01-01

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336

Current-voltage characteristics of a tunnel junction with resonant centers

International Nuclear Information System (INIS)

Ivanov, T.; Valtchinov, V.

1994-05-01

We calculated the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy E c between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures T is much less than E c the I-V characteristics is linear in V both for V c and for V>E c and changes slope at V=E c . This behaviour reflects the energy spectrum of the impurity electrons - the finite value of the charging energy E c . At T ∼ E c the junction reveals an ohmic-like behaviour as a result of the smearing out of the charging effects by the thermal fluctuations. (author). 10 refs, 2 figs

Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior

KAUST Repository

Useinov, Arthur; Mryasov, Oleg; Kosel, Jü rgen

2011-01-01

In this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR

A new quantum interferometer effect in superconducting oxide ceramics

International Nuclear Information System (INIS)

Chela Flores, J.; Shehata, L.N.

1987-08-01

On the basis of a phenomenological approach to type II high T c superconductivity, we suggest that in the lanthanum compounds the Mercereau effect for a coupled junction pair should display and ex-dependent shift in the period of modulation of the tunnelling current. (author). 14 refs

Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

Science.gov (United States)

Lai, S. K.; Dressendorfer, P. V.; Ma, T. P.; Barker, R. C.

1981-01-01

A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy

Directory of Open Access Journals (Sweden)

Keyu Ning

2017-01-01

Full Text Available As one invigorated filed of spin caloritronics combining with spin, charge and heat current, the magneto-Seebeck effect has been experimentally and theoretically studied in spin tunneling thin films and nanostructures. Here we analyze the tunnel magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy (p-MTJs under various measurement temperatures. The large tunnel magneto-Seebeck (TMS ratio up to −838.8% for p-MTJs at 200 K is achieved, with Seebeck coefficient S in parallel and antiparallel states of 6.7 mV/K and 62.9 mV/K, respectively. The temperature dependence of the tunnel magneto-Seebeck can be attributed to the contributing transmission function and electron states at the interface between CoFeB electrode and MgO barrier.

Multiband model for tunneling in MgB2 junctions

NARCIS (Netherlands)

Brinkman, Alexander; Golubov, Alexandre Avraamovitch; Rogalla, Horst; Dolgov, O.V.; Kortus, J.; Kong, Y.; Jepsen, O.; Andersen, O.K.

2002-01-01

A theoretical model for quasiparticle and Josephson tunneling in multiband superconductors is developed and applied to MgB2-based junctions. The gap functions in different bands in MgB2 are obtained from an extended Eliashberg formalism, using the results of band structure calculations. The

High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

KAUST Repository

Amara, Selma.; Sevilla, Gallo. A. Torres; Hawsawi, Mayyada.; Mashraei, Yousof.; Mohammed, Hanan .; Cruz, Melvin E.; Ivanov, Yurii. P.; Jaiswal, Samridh.; Jakob, Gerhard.; Klä ui, Mathias.; Hussain, Muhammad.; Kosel, Jurgen.

2018-01-01

, where size and weight are critical parameters. Given their prevalence on the sensors market, flexible magnetic sensors play a major role in this progress. For many high-performance applications, magnetic tunnel junctions (MTJs) have become the first

Comparison of the magneto-Peltier and magneto-Seebeck effects in magnetic tunnel junctions

NARCIS (Netherlands)

Shan, J.; Dejene, F. K.; Leutenantsmeyer, J. C.; Flipse, J.; Munzenberg, M.; van Wees, B. J.

2015-01-01

Understanding heat generation and transport processes in a magnetic tunnel junction (MTJ) is a significant step towards improving its application in current memory devices. Recent work has experimentally demonstrated the magneto-Seebeck effect in MTJs, where the Seebeck coefficient of the junction

Interconnected magnetic tunnel junctions for spin-logic applications

Science.gov (United States)

Manfrini, Mauricio; Vaysset, Adrien; Wan, Danny; Raymenants, Eline; Swerts, Johan; Rao, Siddharth; Zografos, Odysseas; Souriau, Laurent; Gavan, Khashayar Babaei; Rassoul, Nouredine; Radisic, Dunja; Cupak, Miroslav; Dehan, Morin; Sayan, Safak; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.; Mocuta, Dan; Radu, Iuliana P.

2018-05-01

With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel junctions. By means of spin-transfer torque effect, domains walls are produced at the common free layer and its propagation towards the output pillar sensed by tunneling magneto-resistance. Domain pinning conditions are studied quasi-statically showing a strong dependence on pillar size, ferromagnetic free layer width and inter-pillar distance. Addressing pinning conditions are detrimental for cascading and fan-out of domain walls across nodes, enabling the realization of domain-wall-based logic technology.

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions

International Nuclear Information System (INIS)

Zou Jianfei; Jin Guojun; Ma Yuqiang

2009-01-01

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions.

Science.gov (United States)

Zou, Jianfei; Jin, Guojun; Ma, Yu-Qiang

2009-03-25

We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

Superconductivity in technology

International Nuclear Information System (INIS)

Komarek, P.

1976-01-01

Physics, especially high energy physics and solid state physics was the first area in which superconducting magnets were used but in the long run, the most extensive application of superconductivity will probably be in energy technology. Superconducting power transmission cables, magnets for energy conversion in superconducting electrical machines, MHD-generators and fusion reactors and magnets for energy storage are being investigated. Magnets for fusion reactors will have particularly large physical dimensions, which means that much development effort is still needed, for there is no economic alternative. Superconducting surfaces in radio frequency cavities can give Q-values up to a factor of 10 6 higher than those of conventional resonators. Particle accelerators are the important application. And for telecommunication, simple coaxial superconducting radio frequency cables seem promising. The tunnel effect in superconducting junctions is now being developed commercially for sensitive magnetometers and may soon possibly feature in the memory cells of computer devices. Hence superconductivity can play an important role in the technological world, solving physical and technological problems and showing economic advantages as compared with possible conventional techniques, bearing also in mind the importance of reliability and safety. (author)

Fractional Solitons in Excitonic Josephson Junctions

Science.gov (United States)

Su, Jung-Jung; Hsu, Ya-Fen

The Josephson effect is especially appealing because it reveals macroscopically the quantum order and phase. Here we study this effect in an excitonic Josephson junction: a conjunct of two exciton condensates with a relative phase ϕ0 applied. Such a junction is proposed to take place in the quantum Hall bilayer (QHB) that makes it subtler than in superconductor because of the counterflow of excitonic supercurrent and the interlayer tunneling in QHB. We treat the system theoretically by first mapping it into a pseudospin ferromagnet then describing it by the Landau-Lifshitz-Gilbert equation. In the presence of interlayer tunneling, the excitonic Josephson junction can possess a family of fractional sine-Gordon solitons that resemble the static fractional Josephson vortices in the extended superconducting Josephson junctions. Interestingly, each fractional soliton carries a topological charge Q which is not necessarily a half/full integer but can vary continuously. The resultant current-phase relation (CPR) shows that solitons with Q =ϕ0 / 2 π are the lowest energy states for small ϕ0. When ϕ0 > π , solitons with Q =ϕ0 / 2 π - 1 take place - the polarity of CPR is then switched.

Proximity effect and Andreev reflection in single-C{sub 60} junctions

Energy Technology Data Exchange (ETDEWEB)

Brand, Jonathan; Neel, Nicolas; Kroeger, Joerg [Institut fuer Physik, Technische Universitaet Ilmenau, D-98693 Ilmenau (Germany)

2016-07-01

Single C{sub 60} molecules deposited on an ultrathin oxide film on Nb(110) were investigated using a low-temperature scanning tunnelling microscope. Spectroscopy of the differential conductance (dI/dV) in the tunnelling range indicates proximity-induced superconductivity in junctions comprising the oxide layer as well as single C{sub 60} molecules. Andreev reflection is enhanced upon controlled fabrication of tip-surface contacts. With decreasing electrode separation the Bardeen-Cooper-Schrieffer energy gap gradually evolves into a zero-bias peak in dI/dV spectra reflecting the spectroscopic signature of Andreev reflection. The current-voltage characteristics of the tunnelling and contact junctions are well described by the Blonder-Tinkham-Klapwijk theory. Our spectroscopic data evidence the influence of the electrodes' atomic-scale structure on electron transport across normal metal-superconductor interfaces.

Qubit dephasing due to quasiparticle tunneling

Energy Technology Data Exchange (ETDEWEB)

Zanker, Sebastian; Marthaler, Michael; Schoen, Gerd [Institut fuer Theoretische Festkoerperphysik, Karlsruhe Institute of Technology, D-76128 Karlsruhe (Germany)

2015-07-01

We study dephasing of a superconducting qubit due to quasiparticle tunneling through a Josephson junction. While qubit decay due to tunneling processes is well understood within a golden rule approximation, pure dephasing due to BCS quasiparticles gives rise to a divergent golden rule rate. We calculate qubit dephasing due to quasiparticle tunneling beyond lowest order approximation in coupling between qubit and quasiparticles. Summing up a certain class of diagrams we show that qubit dephasing due to purely longitudinal coupling to quasiparticles leads to dephasing ∝ exp(-x(t)) where x(t) ∝ t{sup 3/2} for short time scales and x(t) ∝ tlog(t) for long time scales.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-01-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-10-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

GaN-based vertical-cavity laser performance improvements using tunnel-junction-cascaded active regions

International Nuclear Information System (INIS)

Piprek, Joachim

2014-01-01

This Letter investigates the output power enhancement achieved by tunnel junction insertion into the InGaN multi-quantum well (MQW) active region of a 410 nm vertical-cavity surface-emitting laser which enables the repeated use of carriers for light generation (carrier recycling). While the number of quantum wells remains unchanged, the tunnel junction eliminates absorption caused by the non-uniform MQW carrier distribution. The thermal resistance drops and the excess bias lead to a surprisingly small rise in self-heating.

Three-terminal superconducting devices

International Nuclear Information System (INIS)

Gallagher, W.J.

1985-01-01

The transistor has a number of properties that make it so useful. The authors discuss these and the additional properties a transistor would need to have for high performance applications at temperatures where superconductivity could contribute advantages to system-level performance. These properties then serve as criteria by which to evaluate three-terminal devices that have been proposed for applications at superconducting temperatures. FETs can retain their transistor properties at low temperatures, but their power consumption is too large for high-speed, high-density cryogenic applications. They discuss in detail why demonstrated superconducting devices with three terminals -Josephson effect based devices, injection controlled weak links, and stacked tunnel junction devices such as the superconducting transistor proposed by K. Gray and the quiteron -- each fail to have true transistor-like properties. They conclude that the potentially very rewarding search for a transistor compatible with superconductivity in high performance applications must be in new directions

Quantum transport in bilayer graphene. Fabry-Perot interferences and proximity-induced superconductivity

International Nuclear Information System (INIS)

Du, Renjun

2015-01-01

Bilayer graphene (BLG) p-n junctions made of hBN-BLG-hBN (hexagonal boron nitride) heterostructures enable ballistic transport over long distances. We investigate Fabry-Perot interferences, and detect that the bilayer-like anti-Klein tunneling transits into single-layer-like Klein tunneling when tuning the Fermi level towards the band edges. Furthermore, the proximity-induced superconductivity has been studied in these devices with Al leads.

The anisotropic tunneling behavior of spin transport in graphene-based magnetic tunneling junction

Science.gov (United States)

Pan, Mengchun; Li, Peisen; Qiu, Weicheng; Zhao, Jianqiang; Peng, Junping; Hu, Jiafei; Hu, Jinghua; Tian, Wugang; Hu, Yueguo; Chen, Dixiang; Wu, Xuezhong; Xu, Zhongjie; Yuan, Xuefeng

2018-05-01

Due to the theoretical prediction of large tunneling magnetoresistance (TMR), graphene-based magnetic tunneling junction (MTJ) has become an important branch of high-performance spintronics device. In this paper, the non-collinear spin filtering and transport properties of MTJ with the Ni/tri-layer graphene/Ni structure were studied in detail by utilizing the non-equilibrium Green's formalism combined with spin polarized density functional theory. The band structure of Ni-C bonding interface shows that Ni-C atomic hybridization facilitates the electronic structure consistency of graphene and nickel, which results in a perfect spin filtering effect for tri-layer graphene-based MTJ. Furthermore, our theoretical results show that the value of tunneling resistance changes with the relative magnetization angle of two ferromagnetic layers, displaying the anisotropic tunneling behavior of graphene-based MTJ. This originates from the resonant conduction states which are strongly adjusted by the relative magnetization angles. In addition, the perfect spin filtering effect is demonstrated by fitting the anisotropic conductance with the Julliere's model. Our work may serve as guidance for researches and applications of graphene-based spintronics device.

The role of local tunneling states in superconductivity at disordered interfaces

International Nuclear Information System (INIS)

Nguyen, B.D.; Simanek, E.

1982-01-01

The origin of the enhancement of the superconducting transition temperature caused by the presence of disordered interfaces is studied. An enhancement mechanism involving the tunneling of the conduction electrons from metal into the local state coupled to the ''two-level state systems'' in the interfaces region, is considered. In this model, the reduction of the tunneling matrix elements by orthogonality blocking can be avoided. (author)

Spin-wave thermal population as temperature probe in magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Le Goff, A., E-mail: adrien.le-goff@u-psud.fr; Devolder, T. [Institut d' Electronique Fondamentale, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France); Nikitin, V. [SAMSUNG Electronics Corporation, 601 McCarthy Blvd Milpitas, California 95035 (United States)

2016-07-14

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm{sup 2} nanopillars. We apply hard axis (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.

Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

Science.gov (United States)

Louarn, K.; Claveau, Y.; Marigo-Lombart, L.; Fontaine, C.; Arnoult, A.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2018-04-01

In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm‑2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.

Nuclear radiation detection with superconducting tunnel junctions

International Nuclear Information System (INIS)

Kurakado, Masahiko

1984-01-01

Since the gap energy of superconductors is as small as 1 meV and 1/1000 of that of semiconductors, it is expected that the number of electron-hole pairs produced in superconductors by radiation is several thousands times as many as the pairs in semiconductors. Therefore, high sensitivity and high resolution radiation detectors may be manufactured by using superconductors. A computer simulation of the cascade excitation process of electrons was carried out. The experimental study was performed by using Sn junctions. The variation of transient voltage was measured by the constant current method. The alpha particles from Po-210 were measured, and the generation of quasi particles was confirmed. The relaxation time of signals was measured by using pulsed laser beam. It was found that the superconductors just after the incidence of radiation became nonequilibrium. The typical alpha spectra were obtained by cooling the superconductors to 0.32 K. The detector is still under development. The problem is leakage current. (Kato, T.)

Large Magnetoresistance at Room Temperature in Organic Molecular Tunnel Junctions with Nonmagnetic Electrodes.

Science.gov (United States)

Xie, Zuoti; Shi, Sha; Liu, Feilong; Smith, Darryl L; Ruden, P Paul; Frisbie, C Daniel

2016-09-27

We report room-temperature resistance changes of up to 30% under weak magnetic fields (0.1 T) for molecular tunnel junctions composed of oligophenylene thiol molecules, 1-2 nm in length, sandwiched between gold contacts. The magnetoresistance (MR) is independent of field orientation and the length of the molecule; it appears to be an interface effect. Theoretical analysis suggests that the source of the MR is a two-carrier (two-hole) interaction at the interface, resulting in spin coupling between the tunneling hole and a localized hole at the Au/molecule contact. Such coupling leads to significantly different singlet and triplet transmission barriers at the interface. Even weak magnetic fields impede spin relaxation processes and thus modify the ratio of holes tunneling via the singlet state versus the triplet state, which leads to the large MR. Overall, the experiments and analysis suggest significant opportunities to explore large MR effects in molecular tunnel junctions based on widely available molecules.

Studies of proximity-effect and tunneling in YBCO/metal layered films

Energy Technology Data Exchange (ETDEWEB)

Greene, L.H.; Barner, J.B.; Feldmann, W.L.; Farrow, L.A.; Miceli, P.F.; Ramesh, R.; Wilkens, B.J.; Bagley, B.G.; Tarascon, J.M.; Wernick, J.H. (Bellcore, Red Bank, NJ (USA)); Giroud, M. (CRTBT-CNRS, Grenoble (France)); Rowell, J.M. (Conductus, Sunnyvale, CA (USA))

1989-12-01

The short coherence length of the high-Tc superconductors, coupled with their tendency to form non-superconducting surface layers, accounts for the difficulty in achieving good tunnel junctions. A proximity layer of a longer coherence length normal metal (N) is expected to ''draw out'' Cooper pairs. Our goal is to fabricate reproducible, planar tunnel junctions of SNIS layered structures for proximity tunneling spectroscopy. Such structures of YBCO/N/I/Pb and SNS structures of YBCO/N/Pb indicate that the normal metal produces a low resistance contact to the YBCO surface with a supercurrent observed in the SNS. The insulating barrier in the SNIS is reproducible, insulating and continuous: A sharp Pb gap and phonons from the counter-electrode are routinely observed. (orig.).

Studies of proximity-effect and tunneling in YBCO/metal layered films

International Nuclear Information System (INIS)

Greene, L.H.; Barner, J.B.; Feldmann, W.L.; Farrow, L.A.; Miceli, P.F.; Ramesh, R.; Wilkens, B.J.; Bagley, B.G.; Tarascon, J.M.; Wernick, J.H.; Giroud, M.; Rowell, J.M.

1989-01-01

The short coherence length of the high-T c superconductors, coupled with their tendency to form non-superconducting surface layers, accounts for the difficulty in achieving good tunnel junctions. A proximity layer of a longer coherence length normal metal (N) is expected to draw out Cooper pairs. The authors' goal is to fabricate reproducible, planar tunnel junctions of SNIS layered structures for proximity tunneling spectroscopy. They discuss how such structures of YBCO/N/I/Pb and SNS structures of YBCO/N/Pb indicate that the normal metal produces a low resistance contact to the YBCO surface with a supercurrent observed in the SNS. The insulating barrier in the SNIS is reproducible, insulating and continuous: A sharp Pb gap and phonons from the counter-electrode are routinely observed

Microscopic superconducting parameters from tunneling in A15 Nb-Sn

International Nuclear Information System (INIS)

Rudman, D.A.; Beasley, M.R.

1984-01-01

High-quality tunnel junctions have been fabricated on thin films of A15 Nb-Sn (20--25 at. %) using oxidized a-Si tunnel barriers and Pb counterelectrodes. These junctions have been used to measure changes in the gap, the transition temperature T/sub c/, and the tunneling density of states with composition in this important high-T/sub c/ superconductor. With the use of the proximity-effect-modified data reduction scheme developed by Arnold and Wolf, values for α 2 F(ω) and μ( are obtained. As the Sn content approaches stoichiometry, the lowest-energy phonon branch in α 2 F(ω) both increases in weight and shifts to lower energy. These two effects combine to produce the increases in lambda as stoichiometry is approached, and at the same time can account for the observed increase in 2Δ/k/sub B/T/sub c/. The values of μ( remain essentially constant as a function of composition, and hence show no evidence for an increased Coulomb interaction with increasing disorder as recently proposed by Anderson et al

Coherence properties in superconducting flux qubits

Energy Technology Data Exchange (ETDEWEB)

Spilla, Samuele

2015-02-16

The research work discussed in this thesis deals with the study of superconducting Josephson qubits. Superconducting qubits are solid-state artificial atoms which are based on lithographically defined Josephson tunnel junctions properties. When sufficiently cooled, these superconducting devices exhibit quantized states of charge, flux or junction phase depending on their design parameters. This allows to observe coherent evolutions of their states. The results presented can be divided into two parts. In a first part we investigate operations of superconducting qubits based on the quantum coherence in superconducting quantum interference devices (SQUID). We explain experimental data which has been observed in a SQUID subjected to fast, large-amplitude modifications of its effective potential shape. The motivations for this work come from the fact that in the past few years there have been attempts to interpret the supposed quantum behavior of physical systems, such as Josephson devices, within a classical framework. Moreover, we analyze the possibility of generating GHZ states, namely maximally entangled states, in a quantum system made out of three Josephson qubits. In particular, we investigate the possible limitations of the GHZ state generation due to coupling to bosonic baths. In the second part of the thesis we address a particular cause of decoherence of flux qubits which has been disregarded until now: thermal gradients, which can arise due to accidental non equilibrium quasiparticle distributions. The reason for these detrimental effects is that heat currents flowing through Josephson tunnel junctions in response to a temperature gradient are periodic functions of the phase difference between the electrodes. The phase dependence of the heat current comes from Andreev reflection, namely an interplay between the quasiparticles which carry heat and the superconducting condensate which is sensitive to the superconducting phase difference. Generally speaking

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien

2012-08-09

Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

Exploring the Tilt-Angle Dependence of electron tunneling across Molecular junction of Self-Assembled Alkanethiols

DEFF Research Database (Denmark)

Frederiksen, Thomas; Munuera, C.; Ocal, C.

2009-01-01

Electronic transport mechanisms in molecular junctions are investigated by a combination of first-principles calculations and current−voltage measurements of several well-characterized structures. We study self-assembled layers of alkanethiols grown on Au(111) and form tunnel junctions...... for the longer molecular chains. Our calculations confirm the observed trends and explain them as a result of two mechanisms, namely, a previously proposed intermolecular tunneling enhancement as well as a hitherto overlooked tilt-dependent molecular gate effect....

Coherent tunnelling conductance in normal-metal/d-wave superconductor/normal-metal double tunnel junctions

International Nuclear Information System (INIS)

Dong, Z C; Zheng, Z M; Xing, D Y

2004-01-01

Taking simultaneously into account the electron-injected current from one normal-metal (N) electrode and the hole-injected current from the other N electrode, we study the coherent tunnelling conductance and quantum interference effects in N/d-wave superconductor (S)/N double tunnel junctions. It is found that oscillations of all quasiparticle transport coefficients and the conductance spectrum with quasiparticle energy and thickness of the d-wave S depend to a great extent on the crystal orientation of the d-wave S. The zero-bias conductance peak is gradually lowered with increasing barrier strength and/or temperature, its magnitude exhibiting damped oscillatory behaviour with thickness of S

Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions

Science.gov (United States)

Louarn, K.; Claveau, Y.; Hapiuk, D.; Fontaine, C.; Arnoult, A.; Taliercio, T.; Licitra, C.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2017-09-01

The aim of this study is to investigate the impact of multiband corrections on the current density in GaAs tunnel junctions (TJs) calculated with a refined yet simple semi-classical interband tunneling model (SCITM). The non-parabolicity of the considered bands and the spin-orbit effects are considered by using a recently revisited SCITM available in the literature. The model is confronted to experimental results from a series of molecular beam epitaxy grown GaAs TJs and to numerical results obtained with a full quantum model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We emphasize the importance of considering the non-parabolicity of the conduction band by two different measurements of the energy-dependent electron effective mass in N-doped GaAs. We also propose an innovative method to compute the non-uniform electric field in the TJ for the SCITM simulations, which is of prime importance for a successful operation of the model. We demonstrate that, when considering the multiband corrections and this new computation of the non-uniform electric field, the SCITM succeeds in predicting the electrical characteristics of GaAs TJs, and are also in agreement with the quantum model. Besides the fundamental study of the tunneling phenomenon in TJs, the main benefit of this SCITM is that it can be easily embedded into drift-diffusion software, which are the most widely-used simulation tools for electronic and opto-electronic devices such as multi-junction solar cells, tunnel field-effect transistors, or vertical-cavity surface-emitting lasers.

Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2014-07-15

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

Tuning the tunneling magnetoresistance by using fluorinated graphene in graphene based magnetic junctions

Directory of Open Access Journals (Sweden)

Shweta Meena

2017-12-01

Full Text Available Spin polarized properties of fluorinated graphene as tunnel barrier with CrO2 as two HMF electrodes are studied using first principle methods based on density functional theory. Fluorinated graphene with different fluorine coverages is explored as tunnel barriers in magnetic tunnel junctions. Density functional computation for different fluorine coverages imply that with increase in fluorine coverages, there is increase in band gap (Eg of graphene, Eg ∼ 3.466 e V was observed when graphene sheet is fluorine adsorbed on both-side with 100% coverage (CF. The results of CF graphene are compared with C4F (fluorination on one-side of graphene sheet with 25% coverage and out-of-plane graphene based magnetic tunnel junctions. On comparison of the results it is observed that CF graphene based structure offers high TMR ∼100%, and the transport of carrier is through tunneling as there are no transmission states near Fermi level. This suggests that graphene sheet with both-side fluorination with 100% coverages acts as a perfect insulator and hence a better barrier to the carriers which is due to negligible spin down current (I↓ in both Parallel Configuration (PC and Antiparallel Configuration (APC.

The investigation of the phase-locking stability in linear arrays of Josephson junctions and arrays closed into a superconducting loop

International Nuclear Information System (INIS)

Darula, M.; Seidel, P.; Misanik, B.; Busse, F.; Heinz, E.; Benacka, S.

1994-01-01

The phase-locking stability is investigated theoretically in two structures: linear arrays of Josephson junctions shunted by resistive load and arrays closed into superconducting loop. In both cases the quasi-identical junctions are supposed to be in arrays. The stability as a function of spread in Josephson junction parameters as well as a function of other circuit parameters is investigated. Using Floquet theory it is shown that spread in critical currents of Josephson junction limit the stability of phase-locking state. From the simulations it follows that the phase-locking in arrays closed into superconducting loop is more stable against the spread in junction parameters than in the case of linear array of Josephson junctions. (orig.)

Electron transport and noise spectroscopy in organic magnetic tunnel junctions with PTCDA and Alq3 barriers

Science.gov (United States)

Martinez, Isidoro; Cascales, Juan Pedro; Hong, Jhen-Yong; Lin, Minn-Tsong; Prezioso, Mirko; Riminucci, Alberto; Dediu, Valentin A.; Aliev, Farkhad G.

2016-10-01

The possible influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present investigation of the electron transport and low frequency noise at temperatures down to 0.3K in magnetic tunnel junctions with an organic PTCDA barriers with thickness up to 5 nm in the tunneling regime and with 200 nm thick Alq3 barrier in the hopping regime. We observed high tunneling magneto-resistance at low temperatures (15-40%) and spin dependent super-poissonian shot noise in organic magnetic tunnel junctions (OMTJs) with PTCDA. The Fano factor exceeds 1.5-2 values which could be caused by interfacial states controlled by spin dependent bunching in the tunneling events through the molecules.1 The bias dependence of the low frequency noise in OMTJs with PTCDA barriers which includes both 1/f and random telegraph noise activated at specific biases will also be discussed. On the other hand, the organic junctions with ferromagnetic electrodes and thick Alq3 barriers present sub-poissonian shot noise which depends on the temperature, indicative of variable range hopping.

Improved impedance transformation between microwave oscillator and Josephson junction series array

International Nuclear Information System (INIS)

Gutmann, P.; Vollmer, E.; Niemeyer, J.

1993-01-01

Superconducting microwave monolithic integrated circuits (S-MMIC), based on Josephson tunnel junctions, are a well-established tool to reproduce the volt at the highest level of accuracy. An external oscillator of a fixed frequency f supplies microwave energy through a waveguide to the S-MMIC. The wave changes its mode at a waveguide-antipodal finline-stripline taper before entering a series array stripline of up to 30 000 Josephson tunnel junctions and is dissipated as heat in a lossy stripline. Both striplines have a characteristic impedance Z of 2 to 5 Ω. An equivalent circuit is shown in figure 1. The oscillator is matched to the waveguide with a source resistance R G Z(waveguide) ∼ 550 Ω. The most critical part is the taper, which should work as a lossless impedance matching network at the frequency of the oscillator. Microwave energy is fed into the tunnel junctions by the surface current I HF of the travelling wave in the series array stripline producing an rf voltage amplitude U JHF across the capacitance C of each junction. The Josephson tunnel junctions work as self-oscillating parametric mixers producing steps of constant voltage V in the current-voltage characteristic whenever (nf - 2eV/h) = 0, with n denoting an integer and e and h denoting the elementary charge and Planck's constant, respectively. The equivalent circuit of a Josephson tunnel element used in a voltage standard for 1 V working at a frequency of f = 70 GHz is given by a lumped parallel resonant circuit with a nonlinear inductance on the order of L = φ 0 /2πI 0 ∼ 1 pH, flux quantum φ 0 = h/2e and a linear capacitance of C ∼ 40 pF. These tunnel junctions have a maximum zero voltage current of approximately I 0 ∼ 350 μA. (orig.)

Microwave dependence of subharmonic gap structure in superconducting junctions

DEFF Research Database (Denmark)

Sørensen, O. Hoffman; Kofoed, Bent; Pedersen, Niels Falsig

1974-01-01

are integers: m=1,2,3,… and n=0,1,2,…. The power dependence of the satellite structure and the microwave-assisted tunneling structure is consistent for all junctions tested with the expression Jn2(m e Vrf / h ν), where Jn(x) is the ordinary Bessel function of order n, Vrf is the amplitude of the induced...

Elliptic annular Josephson tunnel junctions in an external magnetic field: the statics

DEFF Research Database (Denmark)

Monaco, Roberto; Granata, Carmine; Vettoliere, Antonio

2015-01-01

We have investigated the static properties of one-dimensional planar Josephson tunnel junctions (JTJs) in the most general case of elliptic annuli. We have analyzed the dependence of the critical current in the presence of an external magnetic field applied either in the junction plane...... symmetric electrodes a transverse magnetic field is equivalent to an in-plane field applied in the direction of the current flow. Varying the ellipse eccentricity we reproduce all known results for linear and ring-shaped JTJs. Experimental data on high-quality Nb/Al-AlOx/Nb elliptic annular junctions...

NbN/AlN/NbN tunnel junctions with high current density up to 54 kA/cm2

International Nuclear Information System (INIS)

Wang, Z.; Kawakami, A.; Uzawa, Y.

1997-01-01

We report on progress in the development of high current density NbN/AlN/NbN tunnel junctions for applications as submillimeter wave superconductor-insulator-superconductor mixers. A very high current density up to 54 kA/cm 2 , roughly an order of magnitude larger than any reported results for all-NbN tunnel junctions, was achieved in the junctions with about 1 nm thick AlN barriers. The magnetic field and temperature dependence of critical supercurrents were measured to investigate the Josephson tunneling behavior of critical supercurrents in the high-J c junctions. The junctions showed high-quality junction characteristics with a large gap voltage of 5 mV and sharp quasiparticle current rise (ΔV g =0.1 mV). The R sg /R N ratio was about 5 with a V m value of 14 mV measured at 4.2 K. copyright 1997 American Institute of Physics

Optimized electrode configuration for current-in-plane characterization of magnetic tunnel junction stacks

DEFF Research Database (Denmark)

Cagliani, Alberto; Kjær, Daniel; Østerberg, Frederik Westergaard

2017-01-01

The current-in-plane tunneling technique (CIPT) has been a crucial tool in the development of magnetic tunnel junction stacks suitable for magnetic random access memories (MRAM) for more than a decade. The MRAM development has now reached the maturity to make the transition from the R&D phase...... of electrodes on a multi-electrode probe to reach up to 36% improvement on the repeatability for the resistance area product and the tunneling magnetoresistance measurement, without any hardware modification....

Unconventional superconductivity of the heavy fermion compound UNi2Al3

International Nuclear Information System (INIS)

Zakharov, Andrey

2008-01-01

The heavy fermion compound UNi 2 Al 3 exhibits the coexistence of superconductivity and magnetic order at low temperatures, stimulating speculations about possible exotic Cooper-pairing interaction in this superconductor. However, the preparation of good quality bulk single crystals of UNi 2 Al 3 has proven to be a non-trivial task due to metallurgical problems, which result in the formation of an UAl 2 impurity phase and hence a strongly reduced sample purity. The present work concentrates on the preparation, characterization and electronic properties investigation of UNi 2 Al 3 single crystalline thin film samples. The preparation of thin films was accomplished in a molecular beam epitaxy (MBE) system. (100)-oriented epitaxial thin films of UNi 2 Al 3 were grown on single crystalline YAlO 3 substrates cut in (010)- or (112)-direction. The high crystallographic quality of the samples was proved by several characterisation methods, such as X-ray analysis, RHEED and TEM. To study the magnetic structure of epitaxial thin films resonant magnetic X-ray scattering was employed. The magnetic order of thin the film samples, the formation of magnetic domains with different moment directions, and the magnetic correlation length were discussed. The electronic properties of the UNi 2 Al 3 thin films in the normal and superconducting states were investigated by means of transport measurements. A pronounced anisotropy of the temperature dependent resistivity ρ(T) was observed. Moreover, it was found that the temperature of the resistive superconducting transition depends on the current direction, providing evidence for multiband superconductivity in UNi 2 Al 3 . The initial slope of the upper critical field H' c2 (T) of the thin film samples suggests an unconventional spin-singlet superconducting state, as opposed to bulk single crystal data. To probe the superconducting gap of UNi 2 Al 3 directly by means of tunnelling spectroscopy many planar junctions of different design

Direct detection of the parametrically generated half-harmonic voltage in a Josephson tunnel junction

DEFF Research Database (Denmark)

Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

1976-01-01

The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions...

A Monolithic Interconnected module with a tunnel Junction for Enhanced Electrical and Optical Performance

Energy Technology Data Exchange (ETDEWEB)

Murray, Christopher Sean; Wilt, David Morgan

1999-06-30

An improved thermophotovoltaic (TPV) n/p/n device is provided. Monolithic Interconnected Modules (MIMs), semiconductor devices converting infrared radiation to electricity, have been developed with improved electrical and optical performance. The structure is an n-type emitter on a p-type base with an n-type lateral conduction layer. The incorporation of a tunnel junction and the reduction in the amount of p-type material used results in negligible parasitic absorption, decreased series resistance, increased voltage and increased active area. The novel use of a tunnel junction results in the potential for a TPV device with efficiency greater than 24%.

Bias voltage effect on electron tunneling across a junction with a ferroelectric–ferromagnetic two-phase composite barrier

International Nuclear Information System (INIS)

Wang Jian; Ju Sheng; Li, Z.Y.

2012-01-01

The effect of bias voltage on electron tunneling across a junction with a ferroelectric–ferromagnetic composite barrier is investigated theoretically. Because of the inversion symmetry breaking of the spontaneous ferroelectric polarization, bias voltage dependence of the electron tunneling shows significant differences between the positive bias and the negative one. The differences of spin filtering or tunnel magnetoresistance increase with the increasing absolute value of bias voltage. Such direction preferred electron tunneling is found intimately related with the unusual asymmetry of the electrical potential profile in two-phase composite barrier and provides a unique change to realize rectifying functions in spintronics. - Highlights: ► Electron tunneling across a ferroelectric–ferromagnetic composite barrier junction. ► TMR effect is different under the same value but opposite direction bias voltage. ► This directionality of the electron tunneling enhances with increasing bias voltage.

Simulations of fine structures on the zero field steps of Josephson tunnel junctions

DEFF Research Database (Denmark)

Scheuermann, M.; Chi, C. C.; Pedersen, Niels Falsig

1986-01-01

Fine structures on the zero field steps of long Josephson tunnel junctions are simulated for junctions with the bias current injected into the junction at the edges. These structures are due to the coupling between self-generated plasma oscillations and the traveling fluxon. The plasma oscillations...... are generated by the interaction of the bias current with the fluxon at the junction edges. On the first zero field step, the voltages of successive fine structures are given by Vn=[h-bar]/2e(2omegap/n), where n is an even integer. Applied Physics Letters is copyrighted by The American Institute of Physics....

Evaluation of the Kinetic Property of Single-Molecule Junctions by Tunneling Current Measurements.

Science.gov (United States)

Harashima, Takanori; Hasegawa, Yusuke; Kiguchi, Manabu; Nishino, Tomoaki

2018-01-01

We investigated the formation and breaking of single-molecule junctions of two kinds of dithiol molecules by time-resolved tunneling current measurements in a metal nanogap. The resulting current trajectory was statistically analyzed to determine the single-molecule conductance and, more importantly, to reveal the kinetic property of the single-molecular junction. These results suggested that combining a measurement of the single-molecule conductance and statistical analysis is a promising method to uncover the kinetic properties of the single-molecule junction.

Encoding, training and retrieval in ferroelectric tunnel junctions

Science.gov (United States)

Xu, Hanni; Xia, Yidong; Xu, Bo; Yin, Jiang; Yuan, Guoliang; Liu, Zhiguo

2016-05-01

Ferroelectric tunnel junctions (FTJs) are quantum nanostructures that have great potential in the hardware basis for future neuromorphic applications. Among recently proposed possibilities, the artificial cognition has high hopes, where encoding, training, memory solidification and retrieval constitute a whole chain that is inseparable. However, it is yet envisioned but experimentally unconfirmed. The poor retention or short-term store of tunneling electroresistance, in particular the intermediate states, is still a key challenge in FTJs. Here we report the encoding, training and retrieval in BaTiO3 FTJs, emulating the key features of information processing in terms of cognitive neuroscience. This is implemented and exemplified through processing characters. Using training inputs that are validated by the evolution of both barrier profile and domain configuration, accurate recalling of encoded characters in the retrieval stage is demonstrated.

Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

KAUST Repository

Jin Hu, Wei; Wang, Zhihong; Yu, Weili; Wu, Tao

2016-01-01

Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

KAUST Repository

Jin Hu, Wei

2016-02-29

Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.

Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

KAUST Repository

Useinov, Arthur

2013-08-19

The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.

Impact of lattice strain on the tunnel magnetoresistance in Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions

KAUST Repository

Useinov, Arthur; Saeed, Yasir; Schwingenschlö gl, Udo; Singh, Nirpendra; Useinov, N.

2013-01-01

The objective of this work is to describe the tunnel electron current in single-barrier magnetic tunnel junctions within an approach that goes beyond the single-band transport model. We propose a ballistic multichannel electron transport model that can explain the influence of in-plane lattice strain on the tunnel magnetoresistance as well as the asymmetric voltage behavior. We consider as an example single-crystal magnetic Fe(110) electrodes for Fe/insulator/Fe and Fe/insulator/La0.67Sr0.33MnO3 tunnel junctions, where the electronic band structures of Fe and La0.67Sr0.33MnO3 are derived by ab initio calculations.

Theory of macroscopic quantum tunneling in high-T c cuprate

International Nuclear Information System (INIS)

Kawabata, Shiro; Tanaka, Yukio; Kashiwaya, Satoshi; Asano, Yasuhiro

2006-01-01

To reveal macroscopic quantum tunneling (MQT) in high-T c superconductor Josephson junctions is an important issue since there is a possibility to fabricate a superconducting quantum bit by use of high T c junctions. Using the functional integral and the instanton theory, we analytically obtain the MQT rate (the inverse lifetime of the metastable state) for the c-axis twist Josephson junctions. In the case of the zero twist angle, the system shows the super-Ohmic dissipation due to the presence of the nodal quasiparticle tunneling. Therefore, the MQT rate is suppressed compared with the finite twist angle cases. Furthermore, the effect of the zero energy bound states (ZES) on the MQT in the in-plane junctions is theoretically investigated. We obtained the analytical formula of the MQT rate and showed that the presence of the ZES at the normal/superconductor interface leads to a strong Ohmic quasiparticle dissipation. Therefore, the MQT rate is noticeably inhibited compared with the c-axis junctions in which the ZES are completely absent

Temperature dependence of the superconducting proximity effect quantified by scanning tunneling spectroscopy

Directory of Open Access Journals (Sweden)

A. Stępniak

2015-01-01

Full Text Available Here, we present the first systematic study on the temperature dependence of the extension of the superconducting proximity effect in a 1–2 atomic layer thin metallic film, surrounding a superconducting Pb island. Scanning tunneling microscopy/spectroscopy (STM/STS measurements reveal the spatial variation of the local density of state on the film from 0.38 up to 1.8 K. In this temperature range the superconductivity of the island is almost unaffected and shows a constant gap of a 1.20 ± 0.03 meV. Using a superconducting Nb-tip a constant value of the proximity length of 17 ± 3 nm at 0.38 and 1.8 K is found. In contrast, experiments with a normal conductive W-tip indicate an apparent decrease of the proximity length with increasing temperature. This result is ascribed to the thermal broadening of the occupation of states of the tip, and it does not reflect an intrinsic temperature dependence of the proximity length. Our tunneling spectroscopy experiments shed fresh light on the fundamental issue of the temperature dependence of the proximity effect for atomic monolayers, where the intrinsic temperature dependence of the proximity effect is comparably weak.

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOX barriers

Science.gov (United States)

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.; Huang, S.; Kato, H.; Bi, C.; Xu, M.; LeRoy, B. J.; Wang, W. G.

2018-02-01

Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

Zero-bias conductance quantization in a normal / superconducting junction of nano wire

International Nuclear Information System (INIS)

Asano, Yasuhiro; Tanaka, Yukio

2012-01-01

We discuss a strong relationship between Majorana fermions and odd-frequency Cooper pairs which appear at a disordered normal nano wire attached to a topologically nontrivial superconducting one. The zero-bias differential conductance in a normal / superconducting nano wire junctions is quantized at 2e 2 /h irrespective of degree of disorder, length of disordered segment, and random realization of disordered potential. Such behaviors are exactly the same as those in the anomalous proximity effect of p x -wave spin-triplet superconductors. We show that odd-frequency Cooper pairs assist the unusual transport properties.

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

KAUST Repository

Chshiev, M.; Manchon, Aurelien; Kalitsov, A.; Ryzhanova, N.; Vedyayev, A.; Strelkov, N.; Butler, W. H.; Dieny, B.

2015-01-01

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed

Electron-spin polarization in tunnel junctions with ferromagnetic EuS barriers

International Nuclear Information System (INIS)

Hao, X.; Moodera, J.S.; Meservey, R.

1989-01-01

The authors report here spin-polarized tunneling experiments using non-ferromagnetic electrodes and ferromagnetic EuS barriers. Because of the conduction band in EuS splits into spin-up and spin-down subbands when the temperature is below 16.7 K, the Curie temperature of EuS, the tunnel barrier for electrons with different spin directions is different, therefore giving rise to tunnel current polarization. The spin-filter effect, as it may be called, was observed earlier, directly or indirectly, by several groups: Esaki et al. made a tunneling study on junctions having EuS and EuSe barriers; Thompson et al. studied Schottky barrier tunneling between In and doped EuS; Muller et al. and Kisker et al. performed electron field emission experiments on EuS-coated tungsten tips. The field emission experiments gave a maximum polarization of (89 + 7)% for the emitted electrons. Although the previous tunneling studies did not directly show electron polarization, their results were explained by the same spin- filter effect. This work uses the spin-polarized tunneling technique to show directly that tunnel current is indeed polarized and polarization can be as high as 85%

Spectral density of Cooper pairs in two level quantum dot–superconductors Josephson junction

Energy Technology Data Exchange (ETDEWEB)

Dhyani, A., E-mail: archana.d2003@gmail.com [Department of Physics, University of Petroleum and Energy Studies, Dehradun 248007, Uttarakhand (India); Rawat, P.S. [Department of Nuclear Science and Technology, University of Petroleum and Energy Studies, Dehradun 248007, Uttarakhand (India); Tewari, B.S., E-mail: bstewari@ddn.upes.ac.in [Department of Physics, University of Petroleum and Energy Studies, Dehradun 248007, Uttarakhand (India)

2016-09-15

Highlights: • The present work deals with the study of the electronic spectral density of electron pairs and its effect in charge transport in superconductor-quantum dot-superconductor junctions. • The charge transfer across such junctions can be controlled by changing the positions of the dot level. • The Josephson supercurrent can also be tuned by controlling the position of quantum dot energy levels. - Abstract: In the present paper, we report the role of quantum dot energy levels on the electronic spectral density for a two level quantum dot coupled to s-wave superconducting leads. The theoretical arguments in this work are based on the Anderson model so that it necessarily includes dot energies, single particle tunneling and superconducting order parameter for BCS superconductors. The expression for single particle spectral function is obtained by using the Green's function equation of motion technique. On the basis of numerical computation of spectral function of superconducting leads, it has been found that the charge transfer across such junctions can be controlled by the positions and availability of the dot levels.

Proximity-induced superconductivity in all-silicon superconductor /normal-metal junctions

Science.gov (United States)

Chiodi, F.; Duvauchelle, J.-E.; Marcenat, C.; Débarre, D.; Lefloch, F.

2017-07-01

We have realized laser-doped all-silicon superconducting (S)/normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers' critical temperature when increasing the normal metal thickness, a signature of the highly transparent S/N interface associated to the epitaxial sharp laser doping profile. We extracted the interface resistance by fitting with the linearized Usadel equations, demonstrating a reduction of 1 order of magnitude from previous superconductor/doped Si interfaces. In this well-controlled crystalline system we exploited the low-resistance S/N interfaces to elaborate all-silicon lateral SNS junctions with long-range proximity effect. Their dc transport properties, such as the critical and retrapping currents, could be well understood in the diffusive regime. Furthermore, this work led to the estimation of important parameters in ultradoped superconducting Si, such as the Fermi velocity, the coherence length, or the electron-phonon coupling constant, fundamental to conceive all-silicon superconducting electronics.

Preparation and properties of Ni80Fe20/Al2O3/Co magnetic tunnel junctions

International Nuclear Information System (INIS)

Chen Jing; Du Jun; Wu Xiaoshan; Pan Minghu; Long Jianguo; Zhang Wei; Lu Mu; Hu An; Zhai Hongru

2000-01-01

With plasma oxidisation to create an insulating layer of Al 2 O 3 , the authors have repeatedly fabricated Ni 80 Fe 20 /Al 2 O 3 /Co magnetic tunnel junctions which show obvious tunneling magnetoresistance (TMR) effect. At room temperature, the maximum TMR ratio reaches 6.0%. The switch field can be less than 800 A/m with a relative step width of about 2400 A/m. The junction resistance changes from hundreds of ohms to hundreds of kilo-ohms

High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

Energy Technology Data Exchange (ETDEWEB)

Bedair, S. M., E-mail: bedair@ncsu.edu; Harmon, Jeffrey L.; Carlin, C. Zachary; Hashem Sayed, Islam E.; Colter, P. C. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2016-05-16

The performance of n{sup +}-InGaP(Te)/p{sup +}-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics. Several limitations for as grown and annealed TJ can be attributed to the Te doping of InGaP and its behavior at the junction interface. Te atoms in InGaP tend to get attached at step edges, resulting in a Te memory effect. In this work, we use the peak tunneling current (J{sub pk}) in this TJ as a diagnostic tool to study the behavior of the Te dopant at the TJ interface. Additionally, we used our understanding of Te behavior at the interface, guided by device modeling, to modify the Te source shut-off procedure and the growth rate. These modifications lead to a record performance for both the as-grown (2000 A/cm{sup 2}) and annealed (1000 A/cm{sup 2}) high band gap tunnel junction.

Josephson junctions with ferromagnetic alloy interlayer

Energy Technology Data Exchange (ETDEWEB)

Himmel, Nico

2015-07-23

a variation of j{sub c} and I{sub c}R{sub n} by the s-layer thickness up to the value of nonmagnetic SIS junctions is notable. Additionally information on the emergence of superconductivity with the s-layer thickness was acquired. The introduction of this thesis (Chapter 1) is intended to motivate the experimental efforts and put them into the research context. An account on the evolving field of quantum information processing shall highlight the relevance of performance enhancements of superconducting devices. The chapter also introduces the theories of electron tunneling and effects at Josephson barriers, which are essential to analyse the experimental data. Moreover a description of magnetism along with mechanisms and experiments related to π Josephson junctions are presented. In the following (Chapter 2) an overview about machines and processes for the fabrication and characterisation of thin film devices is given. The preparation of samples was performed at facilities of the Technical Faculty of the University of Kiel. Also information about the experimental setup are given. A focus is put on the deposition of layers with thickness gradients across the wafer and combinatorial sputtering to achieve independent variations of two layer parameters. Finally (Chapter 3) experimental data for different types of Josephson junctions are shown. Related theories, relevant publications and a discussion are introduced along with the data.

Josephson junctions with ferromagnetic alloy interlayer

International Nuclear Information System (INIS)

Himmel, Nico

2015-01-01

j c and I c R n by the s-layer thickness up to the value of nonmagnetic SIS junctions is notable. Additionally information on the emergence of superconductivity with the s-layer thickness was acquired. The introduction of this thesis (Chapter 1) is intended to motivate the experimental efforts and put them into the research context. An account on the evolving field of quantum information processing shall highlight the relevance of performance enhancements of superconducting devices. The chapter also introduces the theories of electron tunneling and effects at Josephson barriers, which are essential to analyse the experimental data. Moreover a description of magnetism along with mechanisms and experiments related to π Josephson junctions are presented. In the following (Chapter 2) an overview about machines and processes for the fabrication and characterisation of thin film devices is given. The preparation of samples was performed at facilities of the Technical Faculty of the University of Kiel. Also information about the experimental setup are given. A focus is put on the deposition of layers with thickness gradients across the wafer and combinatorial sputtering to achieve independent variations of two layer parameters. Finally (Chapter 3) experimental data for different types of Josephson junctions are shown. Related theories, relevant publications and a discussion are introduced along with the data.

Device-quality tunnel junctions on the high Tc superconductor HgBa2CuO4+δ

International Nuclear Information System (INIS)

Zasadzinski, J.; Chen, J.; Romano, P.; Gray, K.E.; Wagner, J.L.; Hinks, D.G.

1995-01-01

SIN and SIS tunnel junction devices (e.g. photon detectors, logic elements) require quasiparticle characteristics that exhibit sharp current onsets at the gap voltage and very low sub-gap conductances. Progress is reported on the development of such junctions on High Tc cuprates using mechanical point contacts. In general, these contacts display the optimum characteristics that can be obtained from HTS native-surface tunnel barriers. Most cuprates display a sub-gap conductance which monotonically increases with voltage about the minimum value at zero bias. However, tunneling data of unusually high quality have been obtained for the recently discovered Hg-based cuprate, HgBa 2 CuO 4 (T c =96K). SIS' tunneling data using a Nb tip are presented which exhibit very low and flat sub-gap conductances and sharp conductance peaks as expected from a BCS density of states. These results are slightly improved over earlier published results with SIN junctions. Use of the experimental data to simulate the performance of a quasiparticle mixer demonstrates that noise temperatures approaching the quantum limit are possible for SIS and SIN mixers in the range 1-5 THz

Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

International Nuclear Information System (INIS)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2014-01-01

Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

MgO magnetic tunnel junctions of enduring F-type upon annealing

International Nuclear Information System (INIS)

Schleicher, F; Halisdemir, U; Urbain, E; Gallart, M; Boukari, S; Beaurepaire, E; Gilliot, P; Bowen, M; Lacour, D; Montaigne, F; Hehn, M

2015-01-01

The authors performed magnetotransport experiments to determine whether annealing alters the oxygen vacancy-mediated tunnelling potential landscape of the central portion of a MgO ultrathin film within sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions. Using the Î rel method reveals a temperature-dependent tunnelling barrier height for a non-annealed barrier that arises from single oxygen vacancies (F centres) and is qualitatively identical to that found for its partly and fully annealed counterparts. Thus these MTJs with F centres remain of F-type upon annealing. This explicitly confirms that the large tunnel-magnetoresistance (TMR) increase upon annealing results mainly from structural modifications of MgO and CoFeB and not from vacancy pairing within the barrier. Photoluminescence spectra performed on both annealed and non-annealed thin MgO films grown on CoFeB electrodes support this conclusion. This work should promote renewed scrutiny over the precise impact of annealing on tunnelling magnetotransport across MgO. (paper)

Theory of the low-voltage impedance of superconductor-- p insulator--normal metal tunnel junctions

International Nuclear Information System (INIS)

Lemberger, T.R.

1984-01-01

A theory for the low-voltage impedance of a superconductor-- p insulator--normal metal tunnel junction is developed that includes the effects of charge imbalance and of quasiparticle fluctuations. A novel, inelastic, charge-imbalance relaxation process is identified that is associated with the junction itself. This new process leads to the surprising result that the charge-imbalance component of the dc resistance of a junction becomes independent of the electron-phonon scattering rate as the insulator resistance decreases

Spin–transfer torque oscillator in magnetic tunneling junction with short–wavelength magnon excitation

Directory of Open Access Journals (Sweden)

Shizhu Qiao

2018-05-01

Full Text Available Bloch–Bloembergen–Slonczewski (BBS equation is established by extending Bloch–Bloembergen equation, and it is used to study magnetization oscillation in the free magnetic layer of a magnetic tunneling junction. Since both short–wavelength magnon excitation and spin–transfer torque are taken into account in the BBS equation, it is distinguished from Landau–Lifshitz–Gilbert–Slonczewski equation. The macro–spin BBS model predicts that the transverse relaxation time in free magnetic layer should be long enough, as compared with the longitudinal relaxation time, to achieve stable magnetization oscillation for spin–transfer torque oscillator application. Moreover, field–like torque favors the tolerance of fast transverse relaxation, which makes magnetic tunneling junction a better choice than spin valve for the spin–transfer torque oscillator application.

Magnetic-field-controlled negative differential conductance in scanning tunneling spectroscopy of graphene npn junction resonators

Science.gov (United States)

Li, Si-Yu; Liu, Haiwen; Qiao, Jia-Bin; Jiang, Hua; He, Lin

2018-03-01

Negative differential conductance (NDC), characterized by the decreasing current with increasing voltage, has attracted continuous attention for its various novel applications. The NDC typically exists in a certain range of bias voltages for a selected system and controlling the regions of NDC in curves of current versus voltage (I -V ) is experimentally challenging. Here, we demonstrate a magnetic-field-controlled NDC in scanning tunneling spectroscopy of graphene npn junction resonators. The magnetic field not only can switch on and off the NDC, but also can continuously tune the regions of the NDC in the I -V curves. In the graphene npn junction resonators, magnetic fields generate sharp and pronounced Landau-level peaks with the help of the Klein tunneling of massless Dirac fermions. A tip of scanning tunneling microscope induces a relatively shift of the Landau levels in graphene beneath the tip. Tunneling between the misaligned Landau levels results in the magnetic-field-controlled NDC.

Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

International Nuclear Information System (INIS)

Yuan Jian-Hui; Chen Ni; Mo Hua; Zhang Yan; Zhang Zhi-Hai

2016-01-01

We investigate the tunneling magnetoresistance via δ doping in a graphene-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the δ doping. Also, both the transmission probability and the conductance at the parallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping. (paper)

All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

Science.gov (United States)

Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

2011-04-01

A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

Superconductivity switch from spin-singlet to -triplet pairing in a topological superconducting junction

Science.gov (United States)

Tao, Ze; Chen, F. J.; Zhou, L. Y.; Li, Bin; Tao, Y. C.; Wang, J.

2018-06-01

The interedge coupling is the cardinal characteristic of the narrow quantum spin Hall (QSH) insulator, and thus could bring about exotic transport phenomena. Herein, we present a theoretical investigation of the spin-resolved Andreev reflection (AR) in a QSH insulator strip touching on two neighbouring ferromagnetic insulators and one s-wave superconductor. It is demonstrated that, due to the interplay of the interedge coupling and ferromagnetic configuration, there could be not only usual local ARs leading to the spin-singlet pairing with the incident electron and Andreev-reflected hole from different spin subbands, but also novel local ARs giving rise to the spin-triplet pairing from the same spin subband. However, only the latter exists in the absence of the interedge coupling, and therefore the two pairings in turn testify the helical spin texture of the edge states. By proper tuning of the band structures of the ferromagnetic layers, under the resonance bias voltage, the usual and novel local ARs of can be all exhibited, resulting in fully spin-polarized pure spin-singlet superconductivity and pure spin-triplet superconductivity, respectively, which suggests a superconductivity switch from spin-singlet to -triplet pairing by electrical control. The results can be experimentally confirmed by the tunneling conductance and the noise power.

Unconventional superconductivity of the heavy fermion compound UNi{sub 2}Al{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Zakharov, Andrey

2008-07-01

} directly by means of tunnelling spectroscopy many planar junctions of different design employing different techniques were prepared. Despite the tunneling regime of the junctions, no features of the superconducting density of state of UNi{sub 2}Al{sub 3} were ever observed. It is assumed that the absence of UNi{sub 2}Al{sub 3} gap features in the tunneling spectra was caused by imperfections of the tunnelling contacts. The superconductivity of UNi{sub 2}Al{sub 3} was probably suppressed just in a degraded surface layer, resulting in tunneling into non superconducting UNi{sub 2}Al{sub 3}. However, alternative explanations such as intrinsic pair breaking effects at the interface to the barrier are also possible. (orig.)

Magnetic and transport properties of single and double perpendicular magnetic tunnel junctions

International Nuclear Information System (INIS)

Cuchet, Lea

2015-01-01

Due to their advantageous properties in terms of data retention, storage density and critical current density for Spin Transfer Torque (STT) switching, the magnetic tunnel junctions with perpendicular anisotropy have become predominant in the developments for MRAM applications. The aim of this thesis is to improve the anisotropy and transport properties of such structures and to realize even more complex stacks such as perpendicular double junctions. Studies on the magnetic properties and Tunnel Magnetoresistance (TMR) measurements showed that to optimize the performances of the junctions, all the thicknesses of the different layers constituting the stack have to be adapted. To guaranty both a large TMR as well a strong perpendicular anisotropy, compromises are most of the time needed. Studies as a function of magnetic thickness enabled to extract the saturation magnetization, the critical thickness and the magnetic dead layer thickness both in the bottom reference and the top storage layer in structures capped with Ta. This type of junction could be tested electrically after patterning the sample into nano-pillars. Knowing that perpendicular anisotropy mostly arises at the metal/oxide interface, the Ta capping layer was replaced by a MgO one, leading to a huge increase in the anisotropy of the free layer. A second top reference was then added on such a stack to create functional perpendicular double junctions. CoFeB/insertion/CoFeB synthetic antiferromagnetic storage layers could be developed and were proved to be stable enough to replace the standard Co/Pt-based reference layers. (author) [fr

Temperature dependence of the cosphi conductance in Josephson tunnel junctions determined from plasma resonance experiments

DEFF Research Database (Denmark)

Pedersen, Niels Falsig; Sørensen, O. H.; Mygind, Jesper

1978-01-01

The microwave response at 9 GHz of Sn-O-Sn tunnel-junction current biased at zero dc voltage has been measured just below the critical temperature Tc of the Sn films. The temperature dependence of the cosφ conductance is determined from the resonant response at the junction plasma frequency fp...

Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

International Nuclear Information System (INIS)

Bull, D.J.

1977-01-01

The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.) [pt

Influence of chemical composition of CoFeB on tunneling magnetoresistance and microstructure in polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junctions

International Nuclear Information System (INIS)

Tsunekawa, Koji; Choi, Young-Suk; Nagamine, Yoshinori; Djayaprawira, David D.; Takeuchi, Takashi; Kitamoto, Yoshitaka

2006-01-01

We report, for the first time, the correlation between tunneling magnetoresistance (TMR) and the microstructure of polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junctions with various Co/Fe ratios in the (CoFe) 81 B 19 reference and free layers. It is found that the Co/Fe ratio in the (CoFe) 81 B 19 reference layer strongly affects the (001) out-of-plane texture of the MgO tunnel barrier, resulting in the variation in TMR ratio. Further microstructure characterization of the magnetic tunnel junction with a higher TMR ratio and a stronger (001) out-of-plane texture in the MgO tunnel barrier reveals a grain-to-grain lattice match between the crystallized bcc CoFeB reference layer and MgO with a 45deg rotational epitaxial relationship, that is, CoFeB(001)[110]//MgO(001)[100]. (author)

Unconventional transport characteristics of p-wave superconducting junctions in Sr2RuO4-Ru eutectic system

International Nuclear Information System (INIS)

Kambara, H.; Kashiwaya, S.; Yaguchi, H.; Asano, Y.; Tanaka, Y.; Maeno, Y.

2010-01-01

We report on novel local transport characteristics of naturally formed p-wave superconducting junctions of Sr 2 RuO 4 -Ru eutectic system by using microfabrication technique. We observed quite anomalous voltage-current (differential resistance-current) characteristics for both I//ab and I//c directions, which are not seen in conventional Josephson junctions. The anomalous features suggest the internal degrees of freedom of the superconducting state, possibly due to chiral p-wave domain. The dc current acts as a driving force to move chiral p-wave domain walls and form larger critical current path to cause the anomalous hysteresis.

Oxidation process of AlOx-based magnetic tunnel junctions studied by photoconductance

NARCIS (Netherlands)

Koller, P.H.P.; Vanhelmont, F.W.M.; Boeve, H.; Lumens, P.G.E.; Jonge, de W.J.M.

2003-01-01

The oxidation process of Co/AlOx/Co magnetic tunnel junctions has been investigated by photoconductance, in addition to traditional transport measurements. The shape of the photoconductance curves is explained within the framework of a simple qualitative model, assuming an oxidation time dependent

Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation

Science.gov (United States)

Kobayashi, Daisuke; Hirose, Kazuyuki; Makino, Takahiro; Onoda, Shinobu; Ohshima, Takeshi; Ikeda, Shoji; Sato, Hideo; Inocencio Enobio, Eli Christopher; Endoh, Tetsuo; Ohno, Hideo

2017-08-01

The influences of various types of high-energy heavy-ion radiation on 10-nm-scale CoFeB-MgO magnetic tunnel junctions with a perpendicular easy axis have been investigated. In addition to possible latent damage, which has already been pointed out in previous studies, high-energy heavy-ion bombardments demonstrated that the magnetic tunnel junctions may exhibit clear flips between their high- and low-resistance states designed for a digital bit 1 or 0. It was also demonstrated that flipped magnetic tunnel junctions still may provide proper memory functions such as read, write, and hold capabilities. These two findings proved that high-energy heavy ions can produce recoverable bit flips in magnetic tunnel junctions, i.e., soft errors. Data analyses suggested that the resistance flips stem from magnetization reversals of the ferromagnetic layers and that each of them is caused by a single strike of heavy ions. It was concurrently found that an ion strike does not always result in a flip, suggesting a stochastic process behind the flip. Experimental data also showed that the flip phenomenon is dependent on the device and heavy-ion characteristics. Among them, the diameter of the device and the linear energy transfer of the heavy ions were revealed as the key parameters. From their dependences, the physical mechanism behind the flip was discussed. It is likely that a 10-nm-scale ferromagnetic disk loses its magnetization due to a local temperature increase induced by a single strike of heavy ions; this demagnetization is followed by a cooling period associated with a possible stochastic recovery process. On the basis of this hypothesis, a simple analytical model was developed, and it was found that the model accounts for the results reasonably well. This model also predicted that magnetic tunnel junctions provide sufficiently high soft-error reliability for use in space, highlighting their advantage over their counterpart conventional semiconductor memories.

Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

Directory of Open Access Journals (Sweden)

Fen Liu

2016-08-01

Full Text Available Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsic properties.

Topological superconductivity in metallic nanowires fabricated with a scanning tunneling microscope

International Nuclear Information System (INIS)

Rodrigo, J G; Crespo, V; Suderow, H; Vieira, S; Guinea, F

2013-01-01

We report on several low-temperature experiments supporting the presence of Majorana fermions in superconducting lead nanowires fabricated with a scanning tunneling microscope (STM). These nanowires are the connecting bridges between the STM tip and the sample resulting from indentation–retraction processes. We show here that by a controlled tuning of the nanowire region, in which superconductivity is confined by applied magnetic fields, the conductance curves obtained in these situations are indicative of topological superconductivity and Majorana fermions. The most prominent feature of this behavior is the emergence of a zero bias peak in the conductance curves, superimposed on a background characteristic of the conductance between a normal metal and a superconductor in the Andreev regime. The zero bias peak emerges in some nanowires when a magnetic field larger than the lead bulk critical field is applied. This field drives one of the electrodes into the normal state while the other, the tip, remains superconducting on its apex. Meanwhile a topological superconducting state appears in the connecting nanowire of nanometric size. (paper)

Current-driven thermo-magnetic switching in magnetic tunnel junctions

Science.gov (United States)

Kravets, A. F.; Polishchuk, D. M.; Pashchenko, V. A.; Tovstolytkin, A. I.; Korenivski, V.

2017-12-01

We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ electrodes, and is due to a current-driven ferro-to-paramagnetic Curie transition with the associated exchange decoupling within the free layer leading to magnetic reversal. We simulate the current and heat propagation through the device and show how heat focusing can be used to improve the power efficiency. The Curie-switch MTJ demonstrated in this work has the advantage of being highly tunable in terms of its operating temperature range, conveniently to or just above room temperature, which can be of technological significance and competitive with the known switching methods using spin-transfer torques.

Superconductivity applications for infrared and microwave devices II; Proceedings of the Meeting, Orlando, FL, Apr. 4, 5, 1991

Science.gov (United States)

Heinen, Vernon O.; Bhasin, Kul B.

Topics discussed include thin-film technology, microwave transmission lines and resonators, microwave devices and circuits, infrared detectors and bolometers, and superconducting junctions. Papers are presented on possible enhancement in bolometric response using free-standing film of YBa2Cu3O(x), aging and surface instability in high-Tc superconductors, epitaxial Tl2Ba2CaCu2O8 thin films on LaAlO3 and their microwave device properties, the performance of stripline resonators using sputtered YBCO films, and a coplanar waveguide microwave filter of YBa2Cu3O7. Attention is also given to the performance characteristics of Y-Ba-Cu-O microwave superconducting detectors, high-Tc bolometer developments for planetary missions, infrared detectors from YBaCuO thin films, high-temperature superconductor junction technology, and submillimeter receiver components using superconducting tunnel junctions. (For individual items see A93-27244 to A93-27248)

Fluxon dynamics in long annular Josephson tunnel junctions

DEFF Research Database (Denmark)

Martucciello, N.; Mygind, Jesper; Koshelets, V.P.

1998-01-01

Single-fluxon dynamics has been experimentally investigated in high-quality Nb/Al-AlOx/Nb annular Josephson tunnel junctions having a radius much larger than the Josephson penetration depth. Strong evidence of self-field effects is observed. An external magnetic field in the barrier plane acts...... on the fluxon as a periodic potential and lowers its average speed. Further, the results of perturbative calculations do not fit the experimental current-voltage profile and, provided the temperature is low enough, this profile systematically shows pronounced deviations from the smooth predicted form...

Majorana splitting from critical currents in Josephson junctions

Science.gov (United States)

Cayao, Jorge; San-Jose, Pablo; Black-Schaffer, Annica M.; Aguado, Ramón; Prada, Elsa

2017-11-01

A semiconducting nanowire with strong Rashba spin-orbit coupling and coupled to a superconductor can be tuned by an external Zeeman field into a topological phase with Majorana zero modes. Here we theoretically investigate how this exotic topological superconductor phase manifests in Josephson junctions based on such proximitized nanowires. In particular, we focus on critical currents in the short junction limit (LN≪ξ , where LN is the junction length and ξ is the superconducting coherence length) and show that they contain important information about nontrivial topology and Majoranas. This includes signatures of the gap inversion at the topological transition and a unique oscillatory pattern that originates from Majorana interference. Interestingly, this pattern can be modified by tuning the transmission across the junction, thus providing complementary evidence of Majoranas and their energy splittings beyond standard tunnel spectroscopy experiments, while offering further tunability by virtue of the Josephson effect.

Size dependence of spin-torque induced magnetic switching in CoFeB-based perpendicular magnetization tunnel junctions (invited)

Science.gov (United States)

Sun, J. Z.; Trouilloud, P. L.; Gajek, M. J.; Nowak, J.; Robertazzi, R. P.; Hu, G.; Abraham, D. W.; Gaidis, M. C.; Brown, S. L.; O'Sullivan, E. J.; Gallagher, W. J.; Worledge, D. C.

2012-04-01

CoFeB-based magnetic tunnel junctions with perpendicular magnetic anisotropy are used as a model system for studies of size dependence in spin-torque-induced magnetic switching. For integrated solid-state memory applications, it is important to understand the magnetic and electrical characteristics of these magnetic tunnel junctions as they scale with tunnel junction size. Size-dependent magnetic anisotropy energy, switching voltage, apparent damping, and anisotropy field are systematically compared for devices with different materials and fabrication treatments. Results reveal the presence of sub-volume thermal fluctuation and reversal, with a characteristic length-scale of the order of approximately 40 nm, depending on the strength of the perpendicular magnetic anisotropy and exchange stiffness. To have the best spin-torque switching efficiency and best stability against thermal activation, it is desirable to optimize the perpendicular anisotropy strength with the junction size for intended use. It also is important to ensure strong exchange-stiffness across the magnetic thin film. These combine to give an exchange length that is comparable or larger than the lateral device size for efficient spin-torque switching.

Critical Josephson current in a model Pb/YBa2Cu3O7-δ junction

International Nuclear Information System (INIS)

Atkinson, W.A.; Carbotte, J.P.

1995-01-01

We consider a simple model for a c-axis Pb/YBa 2 Cu 3 O 7-δ Josephson junction. The observation of a nonzero current in such a junction by Sun et al. [Phys. Rev. Lett. 72, 2267 (1994)] has been taken as evidence against d-wave superconductivity in YBa 2 Cu 3 O 7-δ . We suggest, however, that the pairing interaction in the CuO 2 planes may well be d wave but that the CuO chains destroy the tetragonal symmetry of the system. We examine two ways in which this happens. In a simple model of an incoherent junction, the chains distort the superconducting condensate away from d x 2 -y 2 symmetry. In a specular junction the chains destroy the tetragonal symmetry of the tunneling matrix element. In either case, the loss of tetragonal symmetry results in a finite Josephson current. Our calculated values of the critical current for specular junctions are in good agreement with the results of Sun and co-workers

Superconducting electromagnets for large wind tunnel magnetic suspension and balance systems

International Nuclear Information System (INIS)

Boom, R.W.; Abdelsalam, M.K.; Bakerek, K.

1985-01-01

This paper presents a new design study of a Magnetic Suspension and Balance System (MSBS) for airplane models in a large 8 ft x 8 ft wind tunnel. New developments in the design include: use of a superconducting solenoid as a model core instead of magnetized iron; combination of permanent magnet material in the model wings along with four race-track coils to produce the required roll torque; and mounting of all the magnets in an integral cold structure instead of in separate cryostats. Design of superconducting solenoid model cores and practical experience with a small-scale prototype are discussed

Multiple frequency generation by bunched solitons in Josephson tunnel junctions

DEFF Research Database (Denmark)

Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

1981-01-01

A detailed numerical study of a long Josephson tunnel junction modeled by a perturbed sine-Gordon equation demonstrates the existence of a variety of bunched soliton configurations. Thus, on the third zero-field step of the V-I characteristic, two simultaneous adjacent frequencies are generated...... in a narrow bias current range. The analysis of the soliton modes provides an explanation of recent experimental observations....

Rapid prototyping of magnetic tunnel junctions with focused ion beam processes

International Nuclear Information System (INIS)

Persson, Anders; Thornell, Greger; Nguyen, Hugo

2010-01-01

Submicron-sized magnetic tunnel junctions (MTJs) are most often fabricated by time-consuming and expensive e-beam lithography. From a research and development perspective, a short lead time is one of the major concerns. Here, a rapid process scheme for fabrication of micrometre size MTJs with focused ion beam processes is presented. The magnetic properties of the fabricated junctions are investigated in terms of magnetic domain structure, tunnelling magnetoresistance (TMR) and coercivity, with extra attention given to the effect of Ga implantation from the ion beam. In particular, the effect of the implantation on the minimum junction size and the magnetization of the sensing layer are studied. In the latter case, magnetic force microscopy and micromagnetic simulations, with the object-oriented micromagnetic framework (OOMMF), are used to study the magnetization reversal. The fabricated junctions show considerable coercivity both along their hard and easy axes. Interestingly, the sensing layer exhibits two remanent states: one with a single and one with a double domain. The hard axis TMR loop has kinks at about ±20 mT which is attributed to a non-uniform lateral coercivity, where the rim of the junctions, which is subjected to Ga implantation from the flank of the ion beam, is more coercive than the unirradiated centre. The width of the coercive rim is estimated to be 160 nm from the hard axis TMR loop. The easy axis TMR loop shows more coercivity than an unirradiated junction and, this too, is found to stem from the coercive rim, as seen from the simulations. It is concluded that the process scheme has three major advantages. Firstly, it has a high lateral and depth resolution—the depth resolution is enhanced by end point detection—and is capable of making junctions of sizes down towards the limit set by the width of the irradiated rim. Secondly, the most delicate process steps are performed in the unbroken vacuum enabling the use of materials prone to

Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (100) barrier layer prepared at room temperature

International Nuclear Information System (INIS)

Ohmori, Hideto; Hatori, Tomoya; Nakagawa, Shigeki

2008-01-01

MgO (100) textured films can be prepared by reactive facing targets sputtering at room temperature without postdeposition annealing process when they were deposited on (100) oriented Fe buffer layers. This method allows fabrication of perpendicular magnetic tunnel junction (p-MTJ) with MgO (100) tunneling barrier layer and rare-earth transition metal (RE-TM) alloy thin films as perpendicularly magnetized free and pinned layers. The 3-nm-thick MgO tunneling barrier layer in p-MTJ multilayer prepared on glass substrate revealed (100) crystalline orientation. Extraordinary Hall effect measurement clarified that the perpendicular magnetic components of 3-nm-thick Fe buffer layers on the two ends of MgO tunneling barrier layer were increased by exchange coupling with RE-TM alloy layers. The RA of 35 kΩ μm 2 and tunneling magnetoresistance ratio of 64% was observed in the multilayered p-MTJ element by current-in-plane-tunneling

Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

Science.gov (United States)

Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F. Y.; Gao, X. S.; Dai, J. Y.

2015-08-01

Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

KAUST Repository

Useinov, Arthur

2011-10-01

Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

Scaling Projections on Spin-Transfer Torque Magnetic Tunnel Junctions

Science.gov (United States)

Das, Debasis; Tulapurkar, Ashwin; Muralidharan, Bhaskaran

2018-02-01

We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function spin transport formalism. We study the geometry dependence by considering square and circular cross-sections. As the transverse dimension in each case reduces, we demonstrate that the transverse mode energy profile plays a major role in the resistance-area product. Both types of devices show constant tunnel magnetoresistance at larger cross-sectional areas but achieve ultra-high magnetoresistance at small cross-sectional areas, while maintaining low resistance-area products. We notice that although the critical switching voltage for switching the magnetization of the free layer nanomagnet in the trilayer case remains constant at larger areas, it needs more energy to switch at smaller areas. In the pentalayer case, we observe an oscillatory behavior at smaller areas as a result of double barrier tunneling. We also describe how switching characteristics of both kinds of devices are affected by the scaling.

Ferroelectric switching of band alignments in LSMO/PZT/Co multiferroic tunnel junctions: an ab initio study.

Science.gov (United States)

Imam, M; Stojić, N; Binggeli, N

2017-08-04

Band alignments in ferroelectric tunnel junctions (FTJs) are expected to play a critical role in determining the charge transport across the tunneling barrier. In general, however, the interface band discontinuities and their polarization dependence are not well known in these systems. Using a first-principles density-functional-theory approach, we explore the ferroelectric (FE) polarization dependence of the band alignments in [Formula: see text] (LSMO/PZT/Co) multiferroic tunnel junctions, for which recent experiments indicated an ON/OFF conductivity behavior upon switching the PZT FE polarization. Our results on the pseudomorphic defect-free LSMO/PZT/Co FTJs evidence a major FE switching effect on the band discontinuities at both interfaces. Based on the changes in the band alignments, we provide a possible explanation for the observed trends in the resistive switching.

Determination of the thickness of Al2O3 barriers in magnetic tunnel junctions

International Nuclear Information System (INIS)

Buchanan, J.D.R.; Hase, T.P.A.; Tanner, B.K.; Hughes, N.D.; Hicken, R.J.

2002-01-01

The barrier thickness in magnetic spin-dependent tunnel junctions with Al 2 O 3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al 2 O 3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density-voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness

Ballistic current transport studies of ferromagnetic multilayer films and tunnel junctions (invited)

International Nuclear Information System (INIS)

Rippard, W. H.; Perrella, A. C.; Buhrman, R. A.

2001-01-01

Three applications of ballistic electron microscopy are used to study, with nanometer-scale resolution, the magnetic and electronic properties of magnetic multilayer thin films and tunnel junctions. First, the capabilities of ballistic electron magnetic microscopy are demonstrated through an investigation of the switching behavior of continuous Ni 80 Fe 20 /Cu/Co trilayer films in the presence of an applied magnetic field. Next, the ballistic, hot-electron transport properties of Co films and multilayers formed by thermal evaporation and magnetron sputtering are compared, a comparison which reveals significant differences in the ballistic transmissivity of thin film multilayers formed by the two techniques. Finally, the electronic properties of thin aluminum oxide tunnel junctions formed by thermal evaporation and sputter deposition are investigated. Here the ballistic electron microscopy studies yield a direct measurement of the barrier height of the aluminum oxide barriers, a result that is invariant over a wide range of oxidation conditions. [copyright] 2001 American Institute of Physics

Light emission and finite-frequency shot noise in molecular junctions: from tunneling to contact

DEFF Research Database (Denmark)

Lu, Jing Tao; Christensen, Rasmus Bjerregaard; Brandbyge, Mads

2013-01-01

Scanning tunneling microscope induced light emission from an atomic or molecular junction has been probed from the tunneling to contact regime in recent experiments. There, the measured light emission yields suggest a strong correlation with the high-frequency current/charge fluctuations. We show...... that this is consistent with the established theory in the tunneling regime, by writing the finite-frequency shot noise as a sum of inelastic transitions between different electronic states. Based on this, we develop a practical scheme to perform calculations on realistic structures using nonequilibrium Green's functions...

Fabrication of fully epitaxial magnetic tunnel junctions with a Co2MnSi thin film and a MgO tunnel barrier

International Nuclear Information System (INIS)

Kijima, H.; Ishikawa, T.; Marukame, T.; Matsuda, K.-I.; Uemura, T.; Yamamoto, M.

2007-01-01

Fully epitaxial magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co 2 MnSi (CMS) thin film having the ordered L2 1 structure as a lower electrode, a MgO tunnel barrier, and a Co 50 Fe 50 upper electrode. Reflection high-energy electron diffraction patterns observed in situ for each layer in the MTJ layer structure during fabrication clearly indicated that all layers of the CMS lower electrode, MgO tunnel barrier, and Co 50 Fe 50 upper electrode grew epitaxially. The microfabricated fully epitaxial CMS/MgO/Co 50 Fe 50 MTJs demonstrated relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K

Josephson current at atomic scale: Tunneling and nanocontacts using a STM

International Nuclear Information System (INIS)

Rodrigo, J.G.; Crespo, V.; Vieira, S.

2006-01-01

Using a scanning tunneling microscope, STM, with a superconducting tip, we have measured the Josephson current in atomic size tunnel junctions and contacts with a small number of quantum channels of conduction. We analyze our results in terms of the Ivanchenko and Zil'berman model for phase diffusion. The effect of the thermal energy and the electromagnetic environment on the Josephson current is discussed in terms of the transmissions of the individual quantum channels. These results suppose an initial step to the control of Scanning Josephson Spectroscopy at atomic level

Tunnel junctions with multiferroic barriers

Science.gov (United States)

Gajek, Martin; Bibes, Manuel; Fusil, Stéphane; Bouzehouane, Karim; Fontcuberta, Josep; Barthélémy, Agnès; Fert, Albert

2007-04-01

Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La0.1Bi0.9MnO3 (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.

Normal-metal quasiparticle traps for superconducting qubits

Energy Technology Data Exchange (ETDEWEB)

Hosseinkhani, Amin [Peter Grunberg Institute (PGI-2), Forschungszentrum Julich, D-52425 Julich (Germany); JARA-Institute for Quantum Information, RWTH Aachen University, D-52056 Aachen (Germany)

2016-07-01

Superconducting qubits are promising candidates to implement quantum computation, and have been a subject of intensive research in the past decade. Excitations of a superconductor, known as quasiparticles, can reduce the qubit performance by causing relaxation; the relaxation rate is proportional to the density of quasiparticles tunneling through Josephson junction. Here, we consider engineering quasiparticle traps by covering parts of a superconducting device with normal-metal islands. We utilize a phenomenological quasiparticle diffusion model to study both the decay rate of excess quasiparticles and the steady-state profile of the quasiparticle density in the device. We apply the model to various realistic configurations to explore the role of geometry and location of the traps.

A scanning tunneling microscope break junction method with continuous bias modulation.

Science.gov (United States)

Beall, Edward; Yin, Xing; Waldeck, David H; Wierzbinski, Emil

2015-09-28

Single molecule conductance measurements on 1,8-octanedithiol were performed using the scanning tunneling microscope break junction method with an externally controlled modulation of the bias voltage. Application of an AC voltage is shown to improve the signal to noise ratio of low current (low conductance) measurements as compared to the DC bias method. The experimental results show that the current response of the molecule(s) trapped in the junction and the solvent media to the bias modulation can be qualitatively different. A model RC circuit which accommodates both the molecule and the solvent is proposed to analyze the data and extract a conductance for the molecule.

Near-Field Enhanced Photochemistry of Single Molecules in a Scanning Tunneling Microscope Junction.

Science.gov (United States)

Böckmann, Hannes; Gawinkowski, Sylwester; Waluk, Jacek; Raschke, Markus B; Wolf, Martin; Kumagai, Takashi

2018-01-10

Optical near-field excitation of metallic nanostructures can be used to enhance photochemical reactions. The enhancement under visible light illumination is of particular interest because it can facilitate the use of sunlight to promote photocatalytic chemical and energy conversion. However, few studies have yet addressed optical near-field induced chemistry, in particular at the single-molecule level. In this Letter, we report the near-field enhanced tautomerization of porphycene on a Cu(111) surface in a scanning tunneling microscope (STM) junction. The light-induced tautomerization is mediated by photogenerated carriers in the Cu substrate. It is revealed that the reaction cross section is significantly enhanced in the presence of a Au tip compared to the far-field induced process. The strong enhancement occurs in the red and near-infrared spectral range for Au tips, whereas a W tip shows a much weaker enhancement, suggesting that excitation of the localized plasmon resonance contributes to the process. Additionally, using the precise tip-surface distance control of the STM, the near-field enhanced tautomerization is examined in and out of the tunneling regime. Our results suggest that the enhancement is attributed to the increased carrier generation rate via decay of the excited near-field in the STM junction. Additionally, optically excited tunneling electrons also contribute to the process in the tunneling regime.

Junction structures based on the high-Tc superconductor YBa2Cu3O7-δ

International Nuclear Information System (INIS)

Gijs, M.A.M.

1993-01-01

An overview is given of the investigations of the Josephson effect in junction structures based on the high-T c superconductor YBa 2 Cu 3 O 7-δ , which were carried out at the Philips Research Laboratories in Eindhoven in the 1988-1990 period. The reported results are presented in their international scientific context, without attempting a complete review of the subject. However, the various junction types studied give a good idea of the scientific pursuits of high-T c junction researchers in this period. The following junctions are considered: in the category of 'weak link'-type junctions we have investigated YBa 2 Cu 3 O 7-δ -Ag-Nb point contact junctions, YBa 2 Cu 3 O 7-δ Dayem bridges and YBa 2 Cu 3 O 7-δ -Ag(-Al)-Pb proximity junctions. In these structures we combine a high-T c with a low-T c superconductor. We also fabricated planar 'all high-T c ' YBa 2 Cu 3 O 7-δ -Ag-YBa 2 Cu 3 O 7-δ junctions using a submicron structuring process. Next we have made tunnel junctions to study density of states effects of the high-T c superconductor : YBa 2 Cu 3 O 7-δ -Pb junctions using the degraded YBa 2 Cu 3 O 7-δ -Pb interface as a tunnel barrier, and YBa 2 Cu 3 O 7-δ -Ag-Al/Al 2 O 3 /Pb tunnel junctions based on the superconducting proximity effect. Our junction structures are electrically characterized and mostly studied in microwave and magnetic fields. Results are compared with current theoretical models. (orig.)

MoRe-based and NbN-based tunnel junctions and their characteristics

International Nuclear Information System (INIS)

Shaternik, V.E.; Noskov, V.L.; Chubatyy, V.V.; Larkin, S.Yu.; Sizontov, V.M.; Miroshnikov, A.M.; Karmazin, A.A.

2007-01-01

Full text: Perspective [1] Josephson Mo-Re alloy-oxide-Pb, Mo-Re alloy-normal metal-oxide-Pb and Mo-Re alloy-normal metal-oxide- normal metal-Mo-Re alloy junctions have been fabricated and investigated. Thin (∼50-100 nm) MoRe superconducting films are deposited on Al 2 O 3 substrates by using a dc magnetron sputtering of MoRe target. Normal metal (Sn, Al) thin films are deposited on the MoRe films surfaces by thermal evaporation of metals in vacuum and oxidized to fabricate junctions oxide barriers. Quasiparticle I-V curves of the fabricated junctions were measured in wide range of voltages. To investigate a transparency spread for the fabricated junctions barriers the computer simulation of the measured quasiparticle I-V curves have been done in framework of the model of multiple Andreev reflections in double-barrier junction interfaces. It's demonstrated the investigated junctions can be described as highly asymmetric double-barrier Josephson junctions with great difference between the two barrier transparencies [2,3]. The result of the comparison of experimental quasiparticle I-V curves and calculated ones is proposed and discussed. Results of computer simulation of quasiparticles I-V curves of NbN-based junctions are presented and discussed. Also I-V curves of the fabricated junctions have been measured under microwave irradiation with 60 GHz frequency , clear Shapiro steps in the measured I-V curves were observed and discussed. (authors)

Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions

International Nuclear Information System (INIS)

Zenkevich, A.; Minnekaev, M.; Matveyev, Yu.; Lebedinskii, Yu.; Bulakh, K.; Chouprik, A.; Baturin, A.; Maksimova, K.; Thiess, S.; Drube, W.

2013-01-01

Electroresistance in ferroelectric tunnel junctions is controlled by changes in the electrostatic potential profile across the junction upon polarization reversal of the ultrathin ferroelectric barrier layer. Here, hard X-ray photoemission spectroscopy is used to reconstruct the electric potential barrier profile in as-grown Cr/BaTiO 3 (001)/Pt(001) heterostructures. Transport properties of Cr/BaTiO 3 /Pt junctions with a sub-μm Cr top electrode are interpreted in terms of tunneling electroresistance with resistance changes of a factor of ∼30 upon polarization reversal. By fitting the I-V characteristics with the model employing an experimentally determined electric potential barrier we derive the step height changes at the BaTiO 3 /Pt (Cr/BaTiO 3 ) interface +0.42(−0.03) eV following downward to upward polarization reversal.

An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction

Science.gov (United States)

Sahoo, G. S.; Nayak, P. P.; Mishra, G. P.

2016-07-01

Multi junction solar cell has not achieved an optimum performance yet. To acquire more conversion efficiency research on multi junction solar cell are in progress. In this work we have proposed a dual junction solar cell with conversion efficiency of 43.603%. Mainly the focus is given on the tunnel diode, window layer and back surface field (BSF) layer of the cell, as all of them plays important role on the cell performance. Here we have designed a hetero InGaP/GaAs tunnel diode which makes tunnel diode more transparent to the bottom cell as well as reduces the recombination at the interfaces. The thickness of the window and BSF layer are optimized to achieve higher conversion efficiency. The simulation is carried out using Silvaco ATLAS TCAD under 1000 sun of AM1.5G spectrum. Different performance parameters of the cell like short circuit current density (Jsc), open circuit voltage (Voc), external quantum efficiency (EQE), fill factor (FF), conversion efficiency (η), spectral response and photogeneration rate of the cell are examined and compared with previously reported literatures. For the proposed model a Voc of 2.7043 V, Jsc of 1898.52 mA/cm2, FF of 88.88% and η of 43.6% are obtained.

Degradation of magnetic tunnel junctions with thin AlOx barrier

Directory of Open Access Journals (Sweden)

Tadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji Taniguchi

2007-01-01

Full Text Available The degradation of magnetic tunnel junctions (MTJs with AlOx barrier was experimentally investigated. Constant voltage stress (CVS measurement was carried out to monitor the time evolution of the conductance and tunneling magnetoresistance (TMR of MTJs. The gradual increase of the stress-induced leakage current (SILC was observed prior to the breakdown, following a power law function of stress time with an exponent of about 0.2–0.4, which is similar to the case of the ultrathin gate oxide films in MOSFETs. The measured TMR for SILC suggests that the spin-dependent current component would be involved in the early stage of degradation, while spin-independent conduction becomes dominant before the breakdown resulting in a decrease of TMR.

Pronounced Environmental Effects on Injection Currents in EGaIn Tunneling Junctions Comprising Self-Assembled Monolayers.

Science.gov (United States)

Carlotti, Marco; Degen, Maarten; Zhang, Yanxi; Chiechi, Ryan C

2016-09-15

Large-area tunneling junctions using eutectic Ga-In (EGaIn) as a top contact have proven to be a robust, reproducible, and technologically relevant platform for molecular electronics. Thus far, the majority of studies have focused on saturated molecules with backbones consisting mainly of alkanes in which the frontier orbitals are either highly localized or energetically inaccessible. We show that self-assembled monolayers of wire-like oligophenyleneethynylenes (OPEs), which are fully conjugated, only exhibit length-dependent tunneling behavior in a low-O 2 environment. We attribute this unexpected behavior to the sensitivity of injection current on environment. We conclude that, contrary to previous reports, the self-limiting layer of Ga 2 O 3 strongly influences transport properties and that the effect is related to the wetting behavior of the electrode. This result sheds light on the nature of the electrode-molecule interface and suggests that adhesive forces play a significant role in tunneling charge-transport in large-area molecular junctions.

Effect of point disorder on superconducting properties of ultrathin epitaxial NbN films

International Nuclear Information System (INIS)

Jesudasan, John; Bagwe, Vivas; Mondal, Mintu; Chand, Madhavi; Kamlapure, Anand; Pai, S.P.; Raychaudhuri, Pratap; Mishra, Archana

2009-01-01

We synthesized homogeneously disordered epitaxial NbN films on MgO(100) substrates using reactive dc magnetron sputtering. The disorder of the films is characterized by the Loffe-Regel parameter k F I. The superconducting properties are studied through transport, ac-susceptibility measurements and electron tunneling. The superconducting transition temperature is studied as a function of thickness for films of different disorder. In the case of the less disordered film, there is a smooth decrease in T c with decreasing thickness but for the more disordered film, the T c shows a sharp decrease to zero at a threshold thickness. The superconducting energy gap is studied via planar tunnel junctions. It is found that for the less disordered films, the temperature dependence of the gap follows the BCS variation but for the more disordered ones, there is a significant deviation from the BCS curve, and the gap remains finite at T c indicating that the superconducting transition is either governed by phase fluctuations or a first order phase transition. (author)

Superconductivity in the Bi-Sr-Ca-Cu-O compounds some characteristics

International Nuclear Information System (INIS)

Escudero, R.

1989-01-01

The authors have prepared 90% single phase bulk samples of the 110K superconducting phase of the Bi-Sr- Ca-Cu-O compounds with different Pb amounts. This paper presents critical superconducting temperatures (zero resistance) of up to 109K were measured in the bulk samples. X-ray powder diffraction patterns of the almost isolated 110K phase. Computer simulated diffractograms were obtained, which are in general agreement with the measured ones. A discussion of the role of Pb in the stability of the 110K phase in this compounds is presented. Tunnelling measurements were made using Bi-based material. The authors studied break junctions and point contact junctions. The energy gap was determined to be about 25.5 meV and the ratio 2Δ/KBTc = 7.5. The data also show structure at energies of 67 and 120 meV

Tunneling spectroscopy on superconducting Nb3Sn with artioficial barriers

International Nuclear Information System (INIS)

Schneider, U.

1984-03-01

Tunneling diodes on Nb 3 Sn were prepared by magnetron sputtering. The superconducting transition temperatures of the Nb 3 Sn films were in the range of 5 to 18 K. An energetically low-lying structure in the tunneling density of states has been localized by detailed studies of the second derivative of the current-voltage characteristics of the diodes. This structure was found near 5.5 meV for stoichiometric Nb 3 Sn (Tsub(c) approx.= 18 K) and at 6.7 meV for understoichiometric Nb 3 Sn (Tsub(c) approx.= 5 K). The minimum in the conductance at zero energy found in the normal state could be identified to be mainly due to inelastic phonon processes of barrier phonons and Nb 3 Sn phonons. Deformations were found in the tunneling density of states of stoichiometric Nb 3 Sn diodes which lead to contradiction when explained by proximity effects. (orig./GSCH)

One-third (period three) harmonic generation in microwave-driven Josephson tunnel junctions

DEFF Research Database (Denmark)

Hansen, Jørn Bindslev; Clarke, J.; Mygind, Jesper

1986-01-01

One-third harmonic signals have been generated in the zero voltage state of a Josephson tunnel junction driven with a microwave current in the frequency range 8–20 GHz. The signal was as much as 50 dB above the noise level of the detector with a linewidth of less than 100 Hz. The junction...... parameters and microwave current were measured in situ in separate experiments. The subharmonic generation occurred for ranges of microwave current and frequency that were in reasonable agreement with the results of digital computer simulations. Applied Physics Letters is copyrighted by The American...

Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

International Nuclear Information System (INIS)

Noguchi, Yutaka; Ueda, Rieko; Kubota, Tohru; Kamikado, Toshiya; Yokoyama, Shiyoshi; Nagase, Takashi

2008-01-01

We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H 2 BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes

Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness

International Nuclear Information System (INIS)

Wilczynski, M.

2011-01-01

Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes. - Research highlights: → The torque oscillates with the thickness of ferromagnetic layer. → Bias dependence of the torque changes with the layer thickness. → Bias dependence of the normal torque can be asymmetric.

Full counting statistics of multiple Andreev reflections in incoherent diffusive superconducting junctions

International Nuclear Information System (INIS)

Samuelsson, P.

2007-01-01

We present a theory for the full distribution of current fluctuations in incoherent diffusive superconducting junctions, subjected to a voltage bias. This theory of full counting statistics of incoherent multiple Andreev reflections is valid for an arbitrary applied voltage. We present a detailed discussion of the properties of the first four cumulants as well as the low and high voltage regimes of the full counting statistics. (orig.)

Feature of the energy gap in YBa2 Cu3 O7 from break junction measurements

International Nuclear Information System (INIS)

Ekino, T.; Minami, T.; Fujii, H.

1995-01-01

Superconducting energy gap in YBa 2 Cu 3 O 7 have been investigated using break junctions. The tunneling conductance, dI/dV, at T=4.2 K shows no leakage around zero bias, while the gap edge peaks are broadened compared to the simple BCS density of states. These features suggest the spatial distribution of the energy gap or the anisotropic s-wave pairing. The observed largest gap value, determined by the peak-to-peak (p-p) separation in dI/dV, is 140 meV, which corresponds to the 4 δ p-p of an SIS junction. The observed tunneling density of states is fairly well expressed by the probability distribution of the energy gap using the BCS density of states

Theory of superconducting spintronic SIsFS devices

International Nuclear Information System (INIS)

Bakurskiy, S.V.; Klenov, N.V.; Soloviev, I.I.; Kupriyanov, M.Yu.; Bol'ginov, V.V.; Ryazanov, V.V.; Vernik, I.V.; Mukhanov, O.A.; Golubov, A.A.

2013-01-01

Full text: Motivated by recent progress in developments of cryogenic memory compatible with single flux quantum (SFQ) circuits we have performed a theoretical study of magnetic SIsFS Josephson junctions, where 'S' is a bulk superconductor, 's' is a thin superconducting film, 'F' is a metallic ferromagnet and 'I' is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have high I C R N product in the π-state, comparable to that in SIS tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlOx-Nb-Pd0:99Fe0:01-Nb junctions. This work is supported by RFBR No. 12-02-90010-Bel a .

Imaging of current distributions in superconducting thin film structures

International Nuclear Information System (INIS)

Doenitz, D.

2006-01-01

Local analysis plays an important role in many fields of scientific research. However, imaging methods are not very common in the investigation of superconductors. For more than 20 years, Low Temperature Scanning Electron Microscopy (LTSEM) has been successfully used at the University of Tuebingen for studying of condensed matter phenomena, especially of superconductivity. In this thesis LTSEM was used for imaging current distributions in different superconducting thin film structures: - Imaging of current distributions in Josephson junctions with ferromagnetic interlayer, also known as SIFS junctions, showed inhomogeneous current transport over the junctions which directly led to an improvement in the fabrication process. An investigation of improved samples showed a very homogeneous current distribution without any trace of magnetic domains. Either such domains were not present or too small for imaging with the LTSEM. - An investigation of Nb/YBCO zigzag Josephson junctions yielded important information on signal formation in the LTSEM both for Josephson junctions in the short and in the long limit. Using a reference junction our signal formation model could be verified, thus confirming earlier results on short zigzag junctions. These results, which could be reproduced in this work, support the theory of d-wave symmetry in the superconducting order parameter of YBCO. Furthermore, investigations of the quasiparticle tunneling in the zigzag junctions showed the existence of Andreev bound states, which is another indication of the d-wave symmetry in YBCO. - The LTSEM study of Hot Electron Bolometers (HEB) allowed the first successful imaging of a stable 'Hot Spot', a self-heating region in HEB structures. Moreover, the electron beam was used to induce an - otherwise unstable - hot spot. Both investigations yielded information on the homogeneity of the samples. - An entirely new method of imaging the current distribution in superconducting interference devices

The tunneling magnetoresistance and spin-polarized optoelectronic properties of graphyne-based molecular magnetic tunnel junctions

International Nuclear Information System (INIS)