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Sample records for superconducting single-electron transistor

  1. Quantitative analysis of Josephson-quasiparticle current in superconducting single-electron transistors

    International Nuclear Information System (INIS)

    Nakamura, Y.; Chen, C.D.; Tsai, J.S.

    1996-01-01

    We have investigated Josephson-quasiparticle (JQP) current in superconducting single-electron transistors in which charging energy E C was larger than superconducting gap energy Δ and junction resistances were much larger than R Q ≡h/4e 2 . We found that not only the shapes of the JQP peaks but also their absolute height were reproduced quantitatively with a theory by Averin and Aleshkin using a Josephson energy of Ambegaokar-Baratoff close-quote s value. copyright 1996 The American Physical Society

  2. Coulomb Blockade and Multiple Andreev Reflection in a Superconducting Single-Electron Transistor

    Science.gov (United States)

    Lorenz, Thomas; Sprenger, Susanne; Scheer, Elke

    2018-06-01

    In superconducting quantum point contacts, multiple Andreev reflection (MAR), which describes the coherent transport of m quasiparticles each carrying an electron charge with m≥3, sets in at voltage thresholds eV = 2Δ /m. In single-electron transistors, Coulomb blockade, however, suppresses the current at low voltage. The required voltage for charge transport increases with the square of the effective charge eV∝ ( me) ^2. Thus, studying the charge transport in all-superconducting single-electron transistors (SSETs) sets these two phenomena into competition. In this article, we present the fabrication as well as a measurement scheme and transport data for a SSET with one junction in which the transmission and thereby the MAR contributions can be continuously tuned. All regimes from weak to strong coupling are addressed. We extend the Orthodox theory by incorporating MAR processes to describe the observed data qualitatively. We detect a new transport process the nature of which is unclear at present. Furthermore, we observe a renormalization of the charging energy when approaching the strong coupling regime.

  3. Phase transitions in trajectories of a superconducting single-electron transistor coupled to a resonator.

    Science.gov (United States)

    Genway, Sam; Garrahan, Juan P; Lesanovsky, Igor; Armour, Andrew D

    2012-05-01

    Recent progress in the study of dynamical phase transitions has been made with a large-deviation approach to study trajectories of stochastic jumps using a thermodynamic formalism. We study this method applied to an open quantum system consisting of a superconducting single-electron transistor, near the Josephson quasiparticle resonance, coupled to a resonator. We find that the dynamical behavior shown in rare trajectories can be rich even when the mean dynamical activity is small, and thus the formalism gives insights into the form of fluctuations. The structure of the dynamical phase diagram found from the quantum-jump trajectories of the resonator is studied, and we see that sharp transitions in the dynamical activity may be related to the appearance and disappearance of bistabilities in the state of the resonator as system parameters are changed. We also demonstrate that for a fast resonator, the trajectories of quasiparticles are similar to the resonator trajectories.

  4. Superconducting single electron transistor for charge sensing in Si/SiGe-based quantum dots

    Science.gov (United States)

    Yang, Zhen

    Si-based quantum devices, including Si/SiGe quantum dots (QD), are promising candidates for spin-based quantum bits (quits), which are a potential platform for quantum information processing. Meanwhile, qubit readout remains a challenging task related to semiconductor-based quantum computation. This thesis describes two readout devices for Si/SiGe QDs and the techniques for developing them from a traditional single electron transistor (SET). By embedding an SET in a tank circuit and operating it in the radio-frequency (RF) regime, a superconducting RF-SET has quick response as well as ultra high charge sensitivity and can be an excellent charge sensor for the QDs. We demonstrate such RF-SETs for QDs in a Si/SiGe heterostructure. Characterization of the SET in magnetic fields is studied for future exploration of advanced techniques such as spin detection and spin state manipulation. By replacing the tank circuit with a high-quality-factor microwave cavity, the embedded SET will be operated in the supercurrent regime as a single Cooper pair transistor (CPT) to further increase the charge sensitivity and reduce any dissipation. The operating principle and implementation of the cavity-embedded CPT (cCPT) will be introduced.

  5. Magnetoresistance in single-electron transistors comprising a superconducting island with ferromagnetic leads

    Science.gov (United States)

    Mizugaki, Yoshinao; Takiguchi, Masashi; Tamura, Nobuyuki; Shimada, Hiroshi

    2018-03-01

    We report electric and magnetic field responses of single-electron transistors (SETs) comprising a superconducting island with ferromagnetic (FM) leads. We fabricated two SETs, one of which had relatively high resistance and the other had relatively low resistance. The SETs had two states for the gate charge: SET-ON or SET-OFF. They also had two states for the FM lead magnetization: parallel (P) or anti-parallel (AP) configuration. Current-voltage characteristics of four SET states (“P & SET-ON,” “P & SET-OFF,” “AP & SET-ON,” and “AP & SET-OFF”) were measured at approximately 0.1 K in a compact dilution refrigerator. Magnetoresistance ratio (MRR) values were obtained for the SET-ON and SET-OFF states, respectively. The higher-resistance SET1 exhibited positive MRR values for all measured bias voltages. The MRR enhancement was confirmed for the SET-OFF state, which agreed well with the co-tunneling model. The lower-resistance SET2, on the other hand, exhibited negative and positive MRR values for higher and lower bias voltage conditions, respectively. The bias voltage for the MRR polarity reversal was changed by the gate voltage. It was also confirmed that the co-tunneling model was partially valid for negative MRR values.

  6. Superconducting transistor

    International Nuclear Information System (INIS)

    Gray, K.E.

    1978-01-01

    A three film superconducting tunneling device, analogous to a semiconductor transistor, is presented, including a theoretical description and experimental results showing a current gain of four. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the semiconductor junction transistor

  7. Modelling transport in single electron transistor

    International Nuclear Information System (INIS)

    Dinh Sy Hien; Huynh Lam Thu Thao; Le Hoang Minh

    2009-01-01

    We introduce a model of single electron transistor (SET). Simulation programme of SET is used as the exploratory tool in order to gain better understanding of process and device physics. This simulator includes a graphic user interface (GUI) in Matlab. The SET was simulated using GUI in Matlab to get current-voltage (I-V) characteristics. In addition, effects of device capacitance, bias, temperature on the I-V characteristics were obtained. In this work, we review the capabilities of the simulator of the SET. Typical simulations of the obtained I-V characteristics of the SET are presented.

  8. Giant current fluctuations in an overheated single-electron transistor

    NARCIS (Netherlands)

    Laakso, M.A.; Heikkilä, T.T.; Nazarov, Y.V.

    2010-01-01

    Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between cotunneling and single-electron tunneling changes to the dominance

  9. Transport Characteristics of Mesoscopic Radio-Frequency Single Electron Transistor

    International Nuclear Information System (INIS)

    Phillips, A. H.; Kirah, K.; Aly, N. A. I.; El-Sayes, H. E.

    2008-01-01

    The transport property of a quantum dot under the influence of external time-dependent field is investigated. The mesoscopic device is modelled as semiconductor quantum dot coupled weakly to superconducting leads via asymmetric double tunnel barriers of different heights. An expression for the current is deduced by using the Landauer–Buttiker formula, taking into consideration of both the Coulomb blockade effect and the magnetic field. It is found that the periodic oscillation of the current with the magnetic field is controlled by the ratio of the frequency of the applied ac-field to the electron cyclotron frequency. Our results show that the present device operates as a radio-frequency single electron transistor

  10. Effects of overheating in a single-electron transistor

    DEFF Research Database (Denmark)

    Korotkov, A. N.; Samuelsen, Mogens Rugholm; Vasenko, S. A.

    1994-01-01

    Heating of a single-electron transistor (SET) caused by the current flowing through it is considered. The current and the temperature increase should be calculated self-consistently taking into account various paths of the heat drain. Even if there is no heat drain from the central electrode...

  11. A high efficiency superconducting nanowire single electron detector

    NARCIS (Netherlands)

    Rosticher, M.; Ladan, F.R.; Maneval, J.P.; Dorenbos, S.N.; Zijlstra, T.; Klapwijk, T.M.; Zwiller, V.; Lupa?cu, A.; Nogues, G.

    2010-01-01

    We report the detection of single electrons using a Nb0.7Ti0.3N superconducting wire deposited on an oxidized silicon substrate. While it is known that this device is sensitive to single photons, we show that it also detects single electrons with kilo-electron-volt energy emitted from the cathode of

  12. Low-frequency noise in single electron tunneling transistor

    DEFF Research Database (Denmark)

    Tavkhelidze, A.N.; Mygind, Jesper

    1998-01-01

    The noise in current biased aluminium single electron tunneling (SET) transistors has been investigated in the frequency range of 5 mHz ..., we find the same input charge noise, typically QN = 5 × 10–4 e/Hz1/2 at 10 Hz, with and without the HF shielding. At lower frequencies, the noise is due to charge trapping, and the voltage noise pattern superimposed on the V(Vg) curve (voltage across transistor versus gate voltage) strongly depends...... when ramping the junction voltage. Dynamic trapping may limit the high frequency applications of the SET transistor. Also reported on are the effects of rf irradiation and the dependence of the SET transistor noise on bias voltage. ©1998 American Institute of Physics....

  13. Giant current fluctuations in an overheated single-electron transistor

    Science.gov (United States)

    Laakso, M. A.; Heikkilä, T. T.; Nazarov, Yuli V.

    2010-11-01

    Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between cotunneling and single-electron tunneling changes to the dominance of the latter. In this interval, the current exhibits anomalous sensitivity to the effective electron temperature of the transistor island and its fluctuations. We present a detailed study of the current and temperature fluctuations at this interesting point. The methods implemented allow for a complete characterization of the distribution of the fluctuating quantities, well beyond the Gaussian approximation. We reveal and explore the parameter range where, for sufficiently small transistor islands, the current fluctuations become gigantic. In this regime, the optimal value of the current, its expectation value, and its standard deviation differ from each other by parametrically large factors. This situation is unique for transport in nanostructures and for electron transport in general. The origin of this spectacular effect is the exponential sensitivity of the current to the fluctuating effective temperature.

  14. Metal-nanoparticle single-electron transistors fabricated using electromigration

    DEFF Research Database (Denmark)

    Bolotin, K I; Kuemmeth, Ferdinand; Pasupathy, A N

    2004-01-01

    We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all...... on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten charge states of individual gold nanoparticles (5–15 nm in diameter). The devices are sufficiently stable to permit spectroscopic studies of the electron-in-a-box level spectra within the nanoparticle as its...

  15. Single-electron transistors fabricated with sidewall spacer patterning

    Science.gov (United States)

    Park, Byung-Gook; Kim, Dae Hwan; Kim, Kyung Rok; Song, Ki-Whan; Lee, Jong Duk

    2003-09-01

    We have implemented a sidewall spacer patterning method for novel dual-gate single-electron transistor (DGSET) and metal-oxide-semiconductor-based SET (MOSET) based on the uniform SOI wire, using conventional lithography and processing technology. A 30 nm wide silicon quantum wire is defined by a sidewall spacer patterning method, and depletion gates for two tunnel junctions of the DGSET are formed by the doped polycrystalline silicon sidewall. The fabricated DGSET and MOSET show clear single-electron tunneling phenomena at liquid nitrogen temperature and insensitivity of the Coulomb oscillation period to gate bias conditions. On the basis of the phase control capability of the sidewall depletion gates, we have proposed a complementary self-biasing method, which enables the SET/CMOS hybrid multi-valued logic (MVL) to operate perfectly well at high temperature, where the peak-to-valley current ratio of Coulomb oscillation severely decreases. The suggested scheme is evaluated by SPICE simulation with an analytical DGSET model, and it is confirmed that even DGSETs with a large Si island can be utilized efficiently in the multi-valued logic.

  16. Poly-silicon quantum-dot single-electron transistors

    International Nuclear Information System (INIS)

    Kang, Kwon-Chil; Lee, Joung-Eob; Lee, Jung-Han; Lee, Jong-Ho; Shin, Hyung-Cheol; Park, Byung-Gook

    2012-01-01

    For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective etching of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon or chemical mechanical polishing (CMP). The two tunneling barriers of the SET are fabricated by thermal oxidation. Also, to decrease the leakage current and control the gate capacitance, we deposit a hard oxide mask layer. The control gate is formed by using an electron beam and photolithography on chemical vapor deposition (CVD). Owing to the small capacitance of the narrow control gate due to the tetraethyl orthosilicate (TEOS) hard mask, we observe clear Coulomb oscillation peaks and differential trans-conductance curves at room temperature. The clear oscillation period of the fabricated SET is 2.0 V.

  17. Measurement of quantum noise in a single-electron transistor near the quantum limit

    Science.gov (United States)

    Xue, W. W.; Ji, Z.; Pan, Feng; Stettenheim, Joel; Blencowe, M. P.; Rimberg, A. J.

    2009-09-01

    Quantum measurement has challenged physicists for almost a century. Classically, there is no lower bound on the noise a measurement may add. Quantum mechanically, however, measuring a system necessarily perturbs it. When applied to electrical amplifiers, this means that improved sensitivity requires increased backaction that itself contributes noise. The result is a strict quantum limit on added amplifier noise. To approach this limit, a quantum-limited amplifier must possess an ideal balance between sensitivity and backaction; furthermore, its noise must dominate that of subsequent classical amplifiers. Here, we report the first complete and quantitative measurement of the quantum noise of a superconducting single-electron transistor (S-SET) near a double Cooper-pair resonance predicted to have the right combination of sensitivity and backaction. A simultaneous measurement of our S-SET's charge sensitivity indicates that it operates within a factor of 3.6 of the quantum limit, a fourfold improvement over the nearest comparable results.

  18. Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process

    Science.gov (United States)

    Song, Ki-Whan; Lee, Yong Kyu; Sim, Jae Sung; Kim, Kyung Rok; Lee, Jong Duk; Park, Byung-Gook; You, Young Sub; Park, Joo-On; Jin, You Seung; Kim, Young-Wug

    2005-04-01

    We propose a complementary self-biasing method which enables the single-electron transistor (SET)/complementary metal-oxide semiconductor (CMOS) hybrid multi-valued logics (MVLs) to operate well at high temperatures, where the peak-to-valley current ratio (PVCR) of the Coulomb oscillation markedly decreases. The new architecture is implemented with a few transistors by utilizing the phase control capability of the sidewall depletion gates in dual-gate single-electron transistors (DGSETs). The suggested scheme is evaluated by a SPICE simulation with an analytical DGSET model. Furthermore, we have developed a new process technology for the SET/CMOS hybrid systems. We have confirmed that both of the fabricated devices, namely, SET and CMOS transistors, exhibit the ideal characteristics for the complementary self-biasing scheme: the SET shows clear Coulomb oscillations with a 100 mV period and the CMOS transistors show a high voltage gain.

  19. Reconfigurable Boolean logic using magnetic single-electron transistors

    Czech Academy of Sciences Publication Activity Database

    Gonzalez-Zalba, M.F.; Ciccarelli, C.; Zarbo, Liviu; Irvine, A.C.; Campion, R.C.; Gallagher, B. L.; Jungwirth, Tomáš; Ferguson, A.J.; Wunderlich, Joerg

    2015-01-01

    Roč. 10, č. 4 (2015), e0125142 E-ISSN 1932-6203 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : single-electron transitor * reconfigurable logic * ferromagnetic semiconductor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.057, year: 2015

  20. Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

    DEFF Research Database (Denmark)

    MacLeod, S. J.; See, A. M.; Keane, Z. K.

    2014-01-01

    Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However......, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET....

  1. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Golnaz Karbasian

    2017-03-01

    Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

  2. Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Kaestner, B.; Irvine, A.C.; Shick, Alexander; Stone, N.; Wang, K. Y.; Rana, U.; Giddings, A.D.; Foxon, C. T.; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2006-01-01

    Roč. 97, č. 7 (2006), 077201/1-077201/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510 Grant - others:EPSRC(GB) GR/S81407/01 Institutional research plan: CEZ:AV0Z10100521 Keywords : anisotropic magnetoresistance * Coulomb blockade * single electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.072, year: 2006

  3. Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor

    Science.gov (United States)

    KhademHosseini, Vahideh; Dideban, Daryoosh; Ahmadi, MohammadTaghi; Ismail, Razali

    2018-05-01

    Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage current, so it reduces main current and reliability of SET. Due to co-tunneling phenomenon, main characteristics of fullerene SET with multiple islands are modelled in this research. Its performance is compared with silicon SET and consequently, research result reports that fullerene SET has lower leakage current and higher reliability than silicon counterpart. Based on the presented model, lower co-tunneling current is achieved by selection of fullerene as SET island material which leads to smaller value of the leakage current. Moreover, island length and the number of islands can affect on co-tunneling and then they tune the current flow in SET.

  4. Fabrication of double-dot single-electron transistor in silicon nanowire

    International Nuclear Information System (INIS)

    Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Ono, Yukinori; Inokawa, Hiroshi; Choi, Jung-Bum; Takahashi, Yasuo

    2010-01-01

    We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

  5. Design of a Negative Differential Resistance Circuit Element Using Single-Electron Transistors

    Science.gov (United States)

    Dixon, D. C.; Heij, C. P.; Hadley, P.; Mooij, J. E.

    1998-03-01

    Electronic circuit elements displaying negative differential resistance (NDR), such as tunnel diodes, have a wide variety of device applications, including oscillators, amplifiers, logic, and memory. We present a two-terminal device using two single-electron transistors (SET's) that demonstrates an NDR profile tuneable with gate voltages. If the capacitive coupling between the SET's is sufficiently larger than the junction capacitances, the device exhibits multiply-peaked NDR, allowing its use as a multi-valued digital element. We will also report recent experimental progress in measurements of such a device, fabricated using standard Al tunnel junctions, but with an additional overlap capacitor to allow the required inter-SET coupling.

  6. Microwave-induced co-tunneling in single electron tunneling transistors

    DEFF Research Database (Denmark)

    Ejrnaes, M.; Savolainen, M.; Manscher, M.

    2002-01-01

    on rubber bellows. Cross-talk was minimized by using individual coaxial lines between the sample and the room temperature electronics: The co-tunneling experiments were performed at zero DC bias current by measuring the voltage response to a very small amplitude 2 Hz current modulation with the gate voltage......The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended...

  7. Ordinary and extraordinary Coulomb blockade magnetoresistance in (Ga,Mn)As single electron transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Novák, Vít; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Foxon, C. T.; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2007-01-01

    Roč. 144, - (2007), s. 536-541 ISSN 0038-1098 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA MŠk LC510; GA ČR GEFON/06/E001; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.535, year: 2007

  8. Non-linear effects and thermoelectric efficiency of quantum dot-based single-electron transistors.

    Science.gov (United States)

    Talbo, Vincent; Saint-Martin, Jérôme; Retailleau, Sylvie; Dollfus, Philippe

    2017-11-01

    By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. By taking into account the phonon-induced collisional broadening of energy levels in the quantum dot, both heat and electrical currents are computed in a voltage range beyond the linear response. Using our homemade code consisting in a 3D Poisson-Schrödinger solver and the resolution of the Master equation, the Seebeck coefficient at low bias voltage appears to be material independent and nearly independent on the level broadening, which makes this device promising for metrology applications as a nanoscale standard of Seebeck coefficient. Besides, at higher voltage bias, the non-linear characteristics of the heat current are shown to be related to the multi-level effects. Finally, when considering only the electronic contribution to the thermal conductance, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power.

  9. High-Precision Displacement Sensing of Monolithic Piezoelectric Disk Resonators Using a Single-Electron Transistor

    Science.gov (United States)

    Li, J.; Santos, J. T.; Sillanpää, M. A.

    2018-02-01

    A single-electron transistor (SET) can be used as an extremely sensitive charge detector. Mechanical displacements can be converted into charge, and hence, SETs can become sensitive detectors of mechanical oscillations. For studying small-energy oscillations, an important approach to realize the mechanical resonators is to use piezoelectric materials. Besides coupling to traditional electric circuitry, the strain-generated piezoelectric charge allows for measuring ultrasmall oscillations via SET detection. Here, we explore the usage of SETs to detect the shear-mode oscillations of a 6-mm-diameter quartz disk resonator with a resonance frequency around 9 MHz. We measure the mechanical oscillations using either a conventional DC SET, or use the SET as a homodyne or heterodyne mixer, or finally, as a radio-frequency single-electron transistor (RF-SET). The RF-SET readout is shown to be the most sensitive method, allowing us to measure mechanical displacement amplitudes below 10^{-13} m. We conclude that a detection based on a SET offers a potential to reach the sensitivity at the quantum limit of the mechanical vibrations.

  10. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

    Energy Technology Data Exchange (ETDEWEB)

    Curry, M. J. [Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); England, T. D.; Bishop, N. C.; Ten-Eyck, G.; Wendt, J. R.; Pluym, T.; Lilly, M. P.; Carroll, M. S. [Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); Carr, S. M. [Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States)

    2015-05-18

    We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

  11. Random telegraph signals by alkanethiol-protected Au nanoparticles in chemically assembled single-electron transistors

    International Nuclear Information System (INIS)

    Kano, Shinya; Azuma, Yasuo; Tanaka, Daisuke; Sakamoto, Masanori; Teranishi, Toshiharu; Smith, Luke W.; Smith, Charles G.; Majima, Yutaka

    2013-01-01

    We have studied random telegraph signals (RTSs) in a chemically assembled single-electron transistor (SET) at temperatures as low as 300 mK. The RTSs in the chemically assembled SET were investigated by measuring the source–drain current, using a histogram of the RTS dwell time, and calculating the power spectrum density of the drain current–time characteristics. It was found that the dwell time of the RTS was dependent on the drain voltage of the SET, but was independent of the gate voltage. Considering the spatial structure of the chemically assembled SET, the origin of the RTS is attributed to the trapped charges on an alkanethiol-protected Au nanoparticle positioned near the SET. These results are important as they will help to realize stable chemically assembled SETs in practical applications

  12. Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature

    Science.gov (United States)

    Khadem Hosseini, Vahideh; Ahmadi, Mohammad Taghi; Afrang, Saeid; Ismail, Razali

    2017-07-01

    Single-electron transistors (SETs) are interesting electronic devices that have become key elements in modern nanoelectronic systems. SETs operate quickly because they use individual electrons, with the number transferred playing a key role in their switching behavior. However, rapid transmission of electrons can cause their accumulation at the island, affecting the I- V characteristic. Selection of fullerene as a nanoscale zero-dimensional material with high stability, and controllable size in the fabrication process, can overcome this charge accumulation issue and improve the reliability of SETs. Herein, the current in a fullerene SET is modeled and compared with experimental data for a silicon SET. Furthermore, a weaker Coulomb staircase and improved reliability are reported. Moreover, the applied gate voltage and fullerene diameter are found to be directly associated with the I- V curve, enabling the desired current to be achieved by controlling the fullerene diameter.

  13. New Technique for Fabrication of Scanning Single-Electron Transistor Microscopy Tips

    Science.gov (United States)

    Goodwin, Eric; Tessmer, Stuart

    Fabrication of glass tips for Scanning Single-Electron Transistor Microscopy (SSETM) can be expensive, time consuming, and inconsistent. Various techniques have been tried, with varying levels of success in regards to cost and reproducibility. The main requirement for SSETM tips is to have a sharp tip ending in a micron-scale flat face to allow for deposition of a quantum dot. Drawing inspiration from methods used to create tips from optical fibers for Near-Field Scanning Optical Microscopes, our group has come up with a quick and cost effective process for creating SSETM tips. By utilizing hydrofluoric acid to etch the tips and oleic acid to guide the etch profile, optical fiber tips with appropriate shaping can be rapidly prepared. Once etched, electric leads are thermally evaporated onto each side of the tip, while an aluminum quantum dot is evaporated onto the face. Preliminary results using various metals, oxide layers, and lead thicknesses have proven promising.

  14. A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire

    DEFF Research Database (Denmark)

    Nilsson, Henrik A.; Duty, Tim; Abay, Simon

    2008-01-01

    We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements...... on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from −0.5 to at least 1.8 V. The charge sensitivity was measured to 32 µerms Hz−1/2 at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just...

  15. Fabrication of a novel silicon single electron transistor for Si:P quantum computer devices

    International Nuclear Information System (INIS)

    Angus, S.J.; Smith, C.E.A.; Gauja, E.; Dzurak, A.S.; Clark, R.G.; Snider, G.L.

    2004-01-01

    Full text: Quantum computation relies on the successful measurement of quantum states. Single electron transistors (SETs) are known to be able to perform fast and sensitive charge measurements of solid state qubits. However, due to their sensitivity, SETs are also very susceptible to random charge fluctuations in a solid-state materials environment. In previous dc transport measurements, silicon-based SETs have demonstrated greater charge stability than A1/A1 2 O 3 SETs. We have designed and fabricated a novel silicon SET architecture for a comparison of the noise characteristics of silicon and aluminium based devices. The silicon SET described here is designed for controllable and reproducible low temperature operation. It is fabricated using a novel dual gate structure on a silicon-on-insulator substrate. A silicon quantum wire is formed in a 100nm thick high-resistivity superficial silicon layer using reactive ion etching. Carriers are induced in the silicon wire by a back gate in the silicon substrate. The tunnel barriers are created electrostatically, using lithographically defined metallic electrodes (∼40nm width). These tunnel barriers surround the surface of the quantum wire, thus producing excellent electrostatic confinement. This architecture provides independent control of tunnel barrier height and island occupancy, thus promising better control of Coulomb blockade oscillations than in previously investigated silicon SETs. The use of a near intrinsic silicon substrate offers compatibility with Si:P qubits in the longer term

  16. The effects of changing the electrodes temperature on the tunnel magnetoresistance in the ferromagnetic single electron transistor

    Science.gov (United States)

    Ahmadi, N.; Pourali, N.; Kavaz, E.

    2018-01-01

    Ferromagnetic single electron transistor with electrodes having different temperatures is investigated and the effects of changing electrodes temperature on TMR of system are studied. A modified orthodox theory is used to study the system and to calculate the electron tunneling transition rate. The results show that the temperature of electrodes can be an effective tool to control and tune the tunnel magnetoresistance of FM-SET. Also, the effects of parameters such as resistance ratio of junctions, magnetic polarization and spin relaxation time on the behaviour of the system are studied.

  17. Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2007-01-01

    Roč. 310, - (2007), s. 1883-1888 ISSN 0304-8853 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2007

  18. Modeling and the analysis of control logic for a digital PWM controller based on a nano electronic single electron transistor

    Directory of Open Access Journals (Sweden)

    Rathnakannan Kailasam

    2008-01-01

    Full Text Available This paper describes the modelling and the analysis of control logic for a Nano-Device- based PWM controller. A comprehensive simple SPICE schematic model for Single Electron transistor has been proposed. The operation of basic Single Electron Transistor logic gates and SET flip flops were successfully designed and their performances analyzed. The proposed design for realizing the logic gates and flip-flops is used in constructing the PWM controller utilized for switching the buck converter circuit. The output of the converter circuit is compared with reference voltage, and when the error voltage and the reference are matched the latch is reset so as to generate the PWM signal. Due to the simplicity and accuracy of the compact model, the simulation time and speed are much faster, which makes it potentially applicable in large-scale circuit simulation. This study confirms that the SET-based PWM controller is small in size, consumes ultra low power and operates at high speeds without compromising any performance. In addition these devices are capable of measuring charges of extremely high sensitivity.

  19. Field-Induced Superconductivity in Electric Double Layer Transistors

    NARCIS (Netherlands)

    Ueno, Kazunori; Shimotani, Hidekazu; Yuan, Hongtao; Ye, Jianting; Kawasaki, Masashi; Iwasa, Yoshihiro

    Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier density in conventional FET devices, electric-field-induced superconductivity was believed to be

  20. A surface-gated InSb quantum well single electron transistor

    International Nuclear Information System (INIS)

    Orr, J M S; Buckle, P D; Fearn, M; Storey, C J; Buckle, L; Ashley, T

    2007-01-01

    Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb blockade and quantized confinement models are considered to explain the observation of conductance oscillations in these structures. The charging energy (e 2 /C) is found to be comparable with the energy spectrum for single particle states (ΔE)

  1. Anti-site defected MoS2 sheet-based single electron transistor as a gas sensor

    Science.gov (United States)

    Sharma, Archana; Husain, Mushahid; Srivastava, Anurag; Khan, Mohd. Shahid

    2018-05-01

    To prevent harmful and poisonous CO gas molecules, catalysts are needed for converting them into benign substances. Density functional theory (DFT) calculations have been used to study the adsorption of CO and CO2 gas molecules on the surface of MoS2 monolayer with Mo atom embedded at S-vacancy site (MoS). The strong interaction between Mo metal with pristine MoS2 sheet suggests its strong binding nature. Doping Mo into MoS2 sheet enhances CO and CO2 adsorption strength. The sensing response of MoS-doped MoS2 system to CO and CO2 gas molecules is obtained in the single electron transistor (SET) environment by varying bias voltage. Doping reduces charging energy of the device which results in fast switching of the device from OFF to ON state.

  2. Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

    Science.gov (United States)

    Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

    2017-01-01

    Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

  3. Image charge effects in single-molecule junctions: Breaking of symmetries and negative-differential resistance in a benzene single-electron transistor

    DEFF Research Database (Denmark)

    Kaasbjerg, Kristen; Flensberg, K.

    2011-01-01

    and molecular symmetries remain unclear. Using a theoretical framework developed for semiconductor-nanostructure-based single-electron transistors (SETs), we demonstrate that the image charge interaction breaks the molecular symmetries in a benzene-based single-molecule transistor operating in the Coulomb...... blockade regime. This results in the appearance of a so-called blocking state, which gives rise to negative-differential resistance (NDR). We show that the appearance of NDR and its magnitude in the symmetry-broken benzene SET depends in a complicated way on the interplay between the many-body matrix...

  4. Rhombic Coulomb diamonds in a single-electron transistor based on an Au nanoparticle chemically anchored at both ends.

    Science.gov (United States)

    Azuma, Yasuo; Onuma, Yuto; Sakamoto, Masanori; Teranishi, Toshiharu; Majima, Yutaka

    2016-02-28

    Rhombic Coulomb diamonds are clearly observed in a chemically anchored Au nanoparticle single-electron transistor. The stability diagrams show stable Coulomb blockade phenomena and agree with the theoretical curve calculated using the orthodox model. The resistances and capacitances of the double-barrier tunneling junctions between the source electrode and the Au core (R1 and C1, respectively), and those between the Au core and the drain electrode (R2 and C2, respectively), are evaluated as 4.5 MΩ, 1.4 aF, 4.8 MΩ, and 1.3 aF, respectively. This is determined by fitting the theoretical curve against the experimental Coulomb staircases. Two-methylene-group short octanedithiols (C8S2) in a C8S2/hexanethiol (C6S) mixed self-assembled monolayer is concluded to chemically anchor the core of the Au nanoparticle at both ends between the electroless-Au-plated nanogap electrodes even when the Au nanoparticle is protected by decanethiol (C10S). This is because the R1 value is identical to that of R2 and corresponds to the tunneling resistances of the octanedithiol chemically bonded with the Au core and the Au electrodes. The dependence of the Coulomb diamond shapes on the tunneling resistance ratio (R1/R2) is also discussed, especially in the case of the rhombic Coulomb diamonds. Rhombic Coulomb diamonds result from chemical anchoring of the core of the Au nanoparticle at both ends between the electroless-Au-plated nanogap electrodes.

  5. Multi-valued logic circuits using hybrid circuit consisting of three gates single-electron transistors (TG-SETs) and MOSFETs.

    Science.gov (United States)

    Shin, SeungJun; Yu, YunSeop; Choi, JungBum

    2008-10-01

    New multi-valued logic (MVL) families using the hybrid circuits consisting of three gates single-electron transistors (TG-SETs) and a metal-oxide-semiconductor field-effect transistor (MOSFET) are proposed. The use of SETs offers periodic literal characteristics due to Coulomb oscillation of SET, which allows a realization of binary logic (BL) circuits as well as multi-valued logic (MVL) circuits. The basic operations of the proposed MVL families are successfully confirmed through SPICE circuit simulation based on the physical device model of a TG-SET. The proposed MVL circuits are found to be much faster, but much larger power consumption than a previously reported MVL, and they have a trade-off between speed and power consumption. As an example to apply the newly developed MVL families, a half-adder is introduced.

  6. Single Electron Tunneling

    International Nuclear Information System (INIS)

    Ruggiero, Steven T.

    2005-01-01

    Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

  7. Atomic layer deposition of Al{sub 2}O{sub 3} for single electron transistors utilizing Pt oxidation and reduction

    Energy Technology Data Exchange (ETDEWEB)

    McConnell, Michael S., E-mail: mmcconn5@nd.edu; Schneider, Louisa C.; Karbasian, Golnaz; Rouvimov, Sergei; Orlov, Alexei O.; Snider, Gregory L. [Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, Indiana 46556 (United States)

    2016-01-15

    This work describes the fabrication of single electron transistors using electron beam lithography and atomic layer deposition to form nanoscale tunnel transparent junctions of alumina (Al{sub 2}O{sub 3}) on platinum nanowires using either water or ozone as the oxygen precursor and trimethylaluminum as the aluminum precursor. Using room temperature, low frequency conductance measurements between the source and drain, it was found that devices fabricated using water had higher conductance than devices fabricated with ozone. Subsequent annealing caused both water- and ozone-based devices to increase in conductance by more than 2 orders of magnitude. Furthermore, comparison of devices at low temperatures (∼4 K) showed that annealed devices displayed much closer to the ideal behavior (i.e., constant differential conductance) outside of the Coulomb blockade region and that untreated devices showed nonlinear behavior outside of the Coulomb blockade region (i.e., an increase in differential conductance with source-drain voltage bias). Transmission electron microscopy cross-sectional images showed that annealing did not significantly change device geometry, but energy dispersive x-ray spectroscopy showed an unusually large amount of oxygen in the bottom platinum layer. This suggests that the atomic layer deposition process results in the formation of a thin platinum surface oxide, which either decomposes or is reduced during the anneal step, resulting in a tunnel barrier without the in-series native oxide contribution. Furthermore, the difference between ozone- and water-based devices suggests that ozone promotes atomic layer deposition nucleation by oxidizing the surface but that water relies on physisorption of the precursors. To test this theory, devices were exposed to forming gas at room temperature, which also reduces platinum oxide, and a decrease in resistance was observed, as expected.

  8. Superconductivity

    International Nuclear Information System (INIS)

    Caruana, C.M.

    1988-01-01

    Despite reports of new, high-temperature superconductive materials almost every day, participants at the First Congress on Superconductivity do not anticipate commercial applications with these materials soon. What many do envision is the discovery of superconducting materials that can function at much warmer, perhaps even room temperatures. Others hope superconductivity will usher in a new age of technology as semiconductors and transistors did. This article reviews what the speakers had to say at the four-day congress held in Houston last February. Several speakers voiced concern that the Reagan administration's apparent lack of interest in funding superconductivity research while other countries, notably Japan, continue to pour money into research and development could hamper America's international competitiveness

  9. Junctionless Cooper pair transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, K. Yu., E-mail: konstantin.yu.arutyunov@jyu.fi [National Research University Higher School of Economics , Moscow Institute of Electronics and Mathematics, 101000 Moscow (Russian Federation); P.L. Kapitza Institute for Physical Problems RAS , Moscow 119334 (Russian Federation); Lehtinen, J.S. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, FI-02044 VTT (Finland)

    2017-02-15

    Highlights: • Junctionless Cooper pair box. • Quantum phase slips. • Coulomb blockade and gate modulation of the Coulomb gap. - Abstract: Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by ±2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime was used. The current–voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field.

  10. Macroscopic charge quantization in single-electron devices

    NARCIS (Netherlands)

    Burmistrov, I.S.; Pruisken, A.M.M.

    2010-01-01

    In a recent paper by the authors [I. S. Burmistrov and A. M. M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single-electron transistor or SET) display "macroscopic charge quantization" which is completely analogous to the quantum Hall effect observed on

  11. The fabrication and single electron transport of Au nano-particles placed between Nb nanogap electrodes

    International Nuclear Information System (INIS)

    Nishino, T; Negishi, R; Ishibashi, K; Kawao, M; Nagata, T; Ozawa, H

    2010-01-01

    We have fabricated Nb nanogap electrodes using a combination of molecular lithography and electron beam lithography. Au nano-particles with anchor molecules were placed in the gap, the width of which could be controlled on a molecular scale (∼2 nm). Three different anchor molecules which connect the Au nano-particles and the electrodes were tested to investigate their contact resistance, and a local gate was fabricated underneath the Au nano-particles. The electrical transport measurements at liquid helium temperatures indicated single electron transistor (SET) characteristics with a charging energy of about ∼ 5 meV, and a clear indication of the effect of superconducting electrodes was not observed, possibly due to the large tunnel resistance.

  12. Superconductivity

    International Nuclear Information System (INIS)

    Taylor, A.W.B.; Noakes, G.R.

    1981-01-01

    This book is an elementray introduction into superconductivity. The topics are the superconducting state, the magnetic properties of superconductors, type I superconductors, type II superconductors and a chapter on the superconductivity theory. (WL)

  13. Continuous-Wave Single-Photon Transistor Based on a Superconducting Circuit

    DEFF Research Database (Denmark)

    Kyriienko, Oleksandr; Sørensen, Anders Søndberg

    2016-01-01

    We propose a microwave frequency single-photon transistor which can operate under continuous wave probing and represents an efficient single microwave photon detector. It can be realized using an impedance matched system of a three level artificial ladder-type atom coupled to two microwave cavities...... and the appearance of a photon flux leaving the second cavity through a separate input-output port. The proposal does not require time variation of the probe signals, thus corresponding to a passive version of a single-photon transistor. The resulting device is robust to qubit dephasing processes, possesses low dark...

  14. Single-electron charging effects

    International Nuclear Information System (INIS)

    Ruggiero, S.T.

    1990-01-01

    The status of our project on single-electron tunneling is at this point excellent. As outlined in our original proposal, a key goal in the development of this project was the demonstration and exploration of the microwave properties of single-electron systems. As discussed here, such work has to date been carried out

  15. Superconductivity

    CERN Document Server

    Poole, Charles P; Farach, Horacio A

    1995-01-01

    Superconductivity covers the nature of the phenomenon of superconductivity. The book discusses the fundamental principles of superconductivity; the essential features of the superconducting state-the phenomena of zero resistance and perfect diamagnetism; and the properties of the various classes of superconductors, including the organics, the buckministerfullerenes, and the precursors to the cuprates. The text also describes superconductivity from the viewpoint of thermodynamics and provides expressions for the free energy; the Ginzburg-Landau and BCS theories; and the structures of the high

  16. Superconductivity

    International Nuclear Information System (INIS)

    Langone, J.

    1989-01-01

    This book explains the theoretical background of superconductivity. Includes discussion of electricity, material fabrication, maglev trains, the superconducting supercollider, and Japanese-US competition. The authors reports the latest discoveries

  17. Superconductivity

    International Nuclear Information System (INIS)

    Onnes, H.K.

    1988-01-01

    The author traces the development of superconductivity from 1911 to 1986. Some of the areas he explores are the Meissner Effect, theoretical developments, experimental developments, engineering achievements, research in superconducting magnets, and research in superconducting electronics. The article also mentions applications shown to be technically feasible, but not yet commercialized. High-temperature superconductivity may provide enough leverage to bring these applications to the marketplace

  18. Superconductivity

    International Nuclear Information System (INIS)

    Andersen, N.H.; Mortensen, K.

    1988-12-01

    This report contains lecture notes of the basic lectures presented at the 1st Topsoee Summer School on Superconductivity held at Risoe National Laboratory, June 20-24, 1988. The following lecture notes are included: L.M. Falicov: 'Superconductivity: Phenomenology', A. Bohr and O. Ulfbeck: 'Quantal structure of superconductivity. Gauge angle', G. Aeppli: 'Muons, neutrons and superconductivity', N.F. Pedersen: 'The Josephson junction', C. Michel: 'Physicochemistry of high-T c superconductors', C. Laverick and J.K. Hulm: 'Manufacturing and application of superconducting wires', J. Clarke: 'SQUID concepts and systems'. (orig.) With 10 tabs., 128 figs., 219 refs

  19. Superconductivity

    International Nuclear Information System (INIS)

    Palmieri, V.

    1990-01-01

    This paper reports on superconductivity the absence of electrical resistance has always fascinated the mind of researchers with a promise of applications unachievable by conventional technologies. Since its discovery superconductivity has been posing many questions and challenges to solid state physics, quantum mechanics, chemistry and material science. Simulations arrived to superconductivity from particle physics, astrophysic, electronics, electrical engineering and so on. In seventy-five years the original promises of superconductivity were going to become reality: a microscopical theory gave to superconductivity the cloth of the science and the level of technological advances was getting higher and higher. High field superconducting magnets became commercially available, superconducting electronic devices were invented, high field accelerating gradients were obtained in superconductive cavities and superconducting particle detectors were under study. Other improvements came in a quiet progression when a tornado brought a revolution in the field: new materials had been discovered and superconductivity, from being a phenomenon relegated to the liquid Helium temperatures, became achievable over the liquid Nitrogen temperature. All the physics and the technological implications under superconductivity have to be considered ab initio

  20. Superconductivity

    CERN Document Server

    Thomas, D B

    1974-01-01

    A short general review is presented of the progress made in applied superconductivity as a result of work performed in connection with the high-energy physics program in Europe. The phenomenon of superconductivity and properties of superconductors of Types I and II are outlined. The main body of the paper deals with the development of niobium-titanium superconducting magnets and of radio-frequency superconducting cavities and accelerating structures. Examples of applications in and for high-energy physics experiments are given, including the large superconducting magnet for the Big European Bubble Chamber, prototype synchrotron magnets for the Super Proton Synchrotron, superconducting d.c. beam line magnets, and superconducting RF cavities for use in various laboratories. (0 refs).

  1. Enhancement of superconducting transition temperature in FeSe electric-double-layer transistor with multivalent ionic liquids

    Science.gov (United States)

    Miyakawa, Tomoki; Shiogai, Junichi; Shimizu, Sunao; Matsumoto, Michio; Ito, Yukihiro; Harada, Takayuki; Fujiwara, Kohei; Nojima, Tsutomu; Itoh, Yoshimitsu; Aida, Takuzo; Iwasa, Yoshihiro; Tsukazaki, Atsushi

    2018-03-01

    We report on an enhancement of the superconducting transition temperature (Tc) of the FeSe-based electric-double-layer transistor (FeSe-EDLT) by applying the multivalent oligomeric ionic liquids (ILs). The IL composed of dimeric cation (divalent IL) enables a large amount of charge accumulation on the surface of the FeSe ultrathin film, resulting in inducing electron-rich conduction even in a rather thick 10 nm FeSe channel. The onset Tc in FeSe-EDLT with the divalent IL is enhanced to be approaching about 50 K at the thin limit, which is about 7 K higher than that in EDLT with conventional monovalent ILs. The enhancement of Tc is a pronounced effect of the application of the divalent IL, in addition to the large capacitance, supposing preferable interface formation of ILs driven by geometric and/or Coulombic effect. The present finding strongly indicates that multivalent ILs are powerful tools for controlling and improving physical properties of materials.

  2. Interplay between superconductivity and Coulomb blockade

    Energy Technology Data Exchange (ETDEWEB)

    Lorenz, Thomas; Sprenger, Susanne; Scheer, Elke [Universitaet Konstanz (Germany)

    2016-07-01

    Studying the interplay between superconductivity and Coulomb blockade (CB) can be achieved by investigating an all superconducting single electron transistor (SSET) consisting of an island coupled to the leads by two tunneling contacts. The majority of experiments performed so far were using superconducting tunnel contacts made from oxide layers, in which multiple Andreev reflections (MAR) can be excluded. Using a mechanically controlled break junction (MCBJ) made of aluminum enables tuning the contributions of MAR in one junction continuously and thereby addressing different transport regimes within the same sample. Our results offer the possibility to attribute particular features in the transport characteristics to the transmission probabilities of individual modes in the MCBJ contact. We discuss our findings in terms of dynamical CB, SSET behaviour and MAR when continuously opening the MCBJ from the fully closed state to a tunneling contact.

  3. Single-electron charging effects

    International Nuclear Information System (INIS)

    Ruggiero, S.T.

    1991-01-01

    The status of our project on single-electron tunneling is, again, excellent. As outlined in our original proposal, a key goal in the development of this project was the demonstration and exploration of the microwave properties of single-electron system. As discussed in this paper such work has to data been carried out. Also as discussed in our previous progress report, the next step in the experimental evolution of the project will be to use lithographically-defined small dots as capacitors as outlined in our proposal. At this point we have made such microdotsdots as will be discussed. We have also continued our work with metal droplets to form single-electron tunnel systems

  4. Superconductivity

    International Nuclear Information System (INIS)

    Kakani, S.L.; Kakani, Shubhra

    2007-01-01

    The monograph provides readable introduction to the basics of superconductivity for beginners and experimentalists. For theorists, the monograph provides nice and brief description of the broad spectrum of experimental properties, theoretical concepts with all details, which theorists should learn, and provides a sound basis for students interested in studying superconducting theory at the microscopic level. Special chapter on the theory of high-temperature superconductivity in cuprates is devoted

  5. Single-electron charging effects

    International Nuclear Information System (INIS)

    Ruggiero, S.T.

    1991-01-01

    The status of our project on single-electron tunneling is, again, excellent. As outlined in our original proposal, a key goal for this project has been the development of a scanning tunneling instrument for the purpose of imaging individual particles and tunneling into these particles at high magnetic fields. Further progress is discussed in this report

  6. Superconductivity

    CERN Document Server

    Ketterson, John B

    2008-01-01

    Conceived as the definitive reference in a classic and important field of modern physics, this extensive and comprehensive handbook systematically reviews the basic physics, theory and recent advances in the field of superconductivity. Leading researchers, including Nobel laureates, describe the state-of-the-art in conventional and unconventional superconductors at a particularly opportune time, as new experimental techniques and field-theoretical methods have emerged. In addition to full-coverage of novel materials and underlying mechanisms, the handbook reflects continued intense research into electron-phone based superconductivity. Considerable attention is devoted to high-Tc superconductivity, novel superconductivity, including triplet pairing in the ruthenates, novel superconductors, such as heavy-Fermion metals and organic materials, and also granular superconductors. What’s more, several contributions address superconductors with impurities and nanostructured superconductors. Important new results on...

  7. Industrial and scientific technology research and development project in fiscal 1997 commissioned by the New Energy and Industrial Technology Development Organization. Research and development of superconducting materials and transistors (report on overall investigation of superconductive devices); 1997 nendo sangyo kagaku gijutsu kenkyu kaihatsu jigyo Shin energy Sangyo Gijutsu Sogo Kaihatsu Kiko itaku. Chodendo zairyo chodendo soshi no kenkyu kaihatsu (chodendo soshika gijutsu kaihatsu seika hokokusho)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    This paper describes development of superconducting new function transistors. Fiscal 1997 as the final year of the project advanced improvement in such transistor-using processes as formation and micro-processing of superconducting thin films to show enhancement in characteristics of high-temperature superconducting transistors and possibility of their application utilizing their high speed motions. Furthermore, fundamental technologies were studied with an aim on junction transistors to be applied as circuits. For field effect transistors, evaluation was performed on critical current distribution of step-type particle boundary junction to make it possible to evaluate characteristics of hundreds of transistors. At the same time, a magnetic flux quantum parametron gate with three-layer structure was fabricated to identify its operation. In superconducting-base transistors, strong reflection was recognized on temperature dependence of permittivity of an Nb-doped strontium titanate substrate used for collectors, by which barrier height was reduced. In the junction transistor and circuit technology, isotropic ramp-edge junctions were fabricated, and so was a frequency divider circuit with single magnetic flux quantum mode operation for evaluating high-speed response characteristics. High time resolution current was observed successfully by using a high-temperature superconducting sampler system. 148 refs., 127 figs., 4 tabs.

  8. Superconductivity

    CERN Document Server

    Poole, Charles P; Creswick, Richard J; Prozorov, Ruslan

    2014-01-01

    Superconductivity, Third Edition is an encyclopedic treatment of all aspects of the subject, from classic materials to fullerenes. Emphasis is on balanced coverage, with a comprehensive reference list and significant graphics from all areas of the published literature. Widely used theoretical approaches are explained in detail. Topics of special interest include high temperature superconductors, spectroscopy, critical states, transport properties, and tunneling. This book covers the whole field of superconductivity from both the theoretical and the experimental point of view. This third edition features extensive revisions throughout, and new chapters on second critical field and iron based superconductors.

  9. Superconductivity

    International Nuclear Information System (INIS)

    Narlikar, A.V.

    1993-01-01

    Amongst the numerous scientific discoveries that the 20th century has to its credit, superconductivity stands out as an exceptional example of having retained its original dynamism and excitement even for more than 80 years after its discovery. It has proved itself to be a rich field by continually offering frontal challenges in both research and applications. Indeed, one finds that a majority of internationally renowned condensed matter theorists, at some point of their career, have found excitement in working in this important area. Superconductivity presents a unique example of having fetched Nobel awards as many as four times to date, and yet, interestingly enough, the field still remains open for new insights and discoveries which could undeniably be of immense technological value. 1 fig

  10. Single Electron Transistor Platform for Microgravity Proteomics, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase II program builds from the successful Phase I efforts to demonstrate that Quantum Logic Devices' nanoelectronic platform for biological detection could...

  11. Superconductivity

    International Nuclear Information System (INIS)

    Anon.

    1988-01-01

    This book profiles the research activity of 42 companies in the superconductivity field, worldwide. It forms a unique and comprehensive directory to this emerging technology. For each research site, it details the various projects in progress, analyzes the level of activity, pinpoints applications and R and D areas, reviews strategies and provides complete contact information. It lists key individuals, offers international comparisons of government funding, reviews market forecasts and development timetables and features a bibliography of selected articles on the subject

  12. Superconductivity

    International Nuclear Information System (INIS)

    Buller, L.; Carrillo, F.; Dietert, R.; Kotziapashis, A.

    1989-01-01

    Superconductors are materials which combine the property of zero electric resistance with the capability to exclude any adjacent magnetic field. This leads to many large scale applications such as the much publicized levitating train, generation of magnetic fields in MHD electric generators, and special medical diagnostic equipment. On a smaller-scale, superconductive materials could replace existing resistive connectors and decrease signal delays by reducing the RLC time constants. Thus, a computer could operate at much higher speeds, and consequently at lower power levels which would reduce the need for heat removal and allow closer spacing of circuitry. Although technical advances and proposed applications are constantly being published, it should be recognized that superconductivity is a slowly developing technology. It has taken scientists almost eighty years to learn what they now know about this material and its function. The present paper provides an overview of the historical development of superconductivity and describes some of the potential applications for this new technology as it pertains to the electronics industry

  13. Superconductivity

    International Nuclear Information System (INIS)

    2007-01-01

    During 2007, a large amount of the work was centred on the ITER project and related tasks. The activities based on low-temperature superconducting (LTS) materials included the manufacture and qualification of ITER full-size conductors under relevant operating conditions, the design of conductors and magnets for the JT-60SA tokamak and the manufacture of the conductors for the European dipole facility. A preliminary study was also performed to develop a new test facility at ENEA in order to test long-length ITER or DEMO full-size conductors. Several studies on different superconducting materials were also started to create a more complete database of superconductor properties, and also for use in magnet design. In this context, an extensive measurement campaign on transport and magnetic properties was carried out on commercially available NbTi strands. Work was started on characterising MgB 2 wire and bulk samples to optimise their performance. In addition, an intense experimental study was started to clarify the effect of mechanical loads on the transport properties of multi-filamentary Nb 3 Sn strands with twisted or untwisted superconducting filaments. The experimental activity on high-temperature superconducting (HTS) materials was mainly focussed on the development and characterisation of YBa 2 Cu 3 O 7-X (YBCO) based coated conductors. Several characteristics regarding YBCO deposition, current transport performance and tape manufacture were investigated. In the framework of chemical approaches for YBCO film growth, a new method, developed in collaboration with the Technical University of Cluj-Napoca (TUCN), Romania, was studied to obtain YBCO film via chemical solution deposition, which modifies the well-assessed metallic organic deposition trifluoroacetate (MOD-TFA) approach. The results are promising in terms of critical current and film thickness values. YBCO properties in films with artificially added pinning sites were characterised in collaboration with

  14. Three-terminal superconducting devices

    International Nuclear Information System (INIS)

    Gallagher, W.J.

    1985-01-01

    The transistor has a number of properties that make it so useful. The authors discuss these and the additional properties a transistor would need to have for high performance applications at temperatures where superconductivity could contribute advantages to system-level performance. These properties then serve as criteria by which to evaluate three-terminal devices that have been proposed for applications at superconducting temperatures. FETs can retain their transistor properties at low temperatures, but their power consumption is too large for high-speed, high-density cryogenic applications. They discuss in detail why demonstrated superconducting devices with three terminals -Josephson effect based devices, injection controlled weak links, and stacked tunnel junction devices such as the superconducting transistor proposed by K. Gray and the quiteron -- each fail to have true transistor-like properties. They conclude that the potentially very rewarding search for a transistor compatible with superconductivity in high performance applications must be in new directions

  15. Superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Batistoni, Paola; De Marco, Francesco; Pieroni, Leonardo [ed.

    2005-07-01

    Research on superconductivity at ENEA is mainly devoted to projects related to the ITER magnet system. In this framework, ENEA has been strongly involved in the design, manufacturing and test campaigns of the ITER toroidal field model coil (TFMC), which reached a world record in operating current (up to 80 kA). Further to this result, the activities in 2004 were devoted to optimising the ITER conductor performance. ENEA participated in the tasks launched by EFDA to define and produce industrial-scale advanced Nb3Sn strand to be used in manufacturing the ITER high-field central solenoid (CS) and toroidal field (TF) magnets. As well as contributing to the design of the new strand and the final conductor layout, ENEA will also perform characterisation tests, addressing in particular the influence of mechanical stress on the Nb3Sn performance. As a member of the international ITER-magnet testing group, ENEA plays a central role in the measurement campaigns and data analyses for each ITER-related conductor and coil. The next phase in the R and D of the ITER magnets will be their mechanical characterisation in order to define the fabrication route of the coils and structures. During 2004 the cryogenic measurement campaign on the Large Hadron Collider (LHC) by-pass diode stacks was completed. As the diode-test activity was the only LHC contract to be finished on schedule, the 'Centre Europeenne pour la Recherche Nucleaire' (CERN) asked ENEA to participate in an international tender for the cold check of the current leads for the LHC magnets. The contract was obtained, and during 2004, the experimental setup was designed and realised and the data acquisition system was developed. The measurement campaign was successfully started at the end of 2004 and will be completed in 2006.

  16. Interface superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Gariglio, S., E-mail: stefano.gariglio@unige.ch [DQMP, Université de Genève, 24 Quai E.-Ansermet, CH-1211 Genève (Switzerland); Gabay, M. [Laboratoire de Physique des Solides, Bat 510, Université Paris-Sud 11, Centre d’Orsay, 91405 Orsay Cedex (France); Mannhart, J. [Max Planck Institute for Solid State Research, 70569 Stuttgart (Germany); Triscone, J.-M. [DQMP, Université de Genève, 24 Quai E.-Ansermet, CH-1211 Genève (Switzerland)

    2015-07-15

    Highlights: • We discuss interfacial superconductivity, a field boosted by the discovery of the superconducting interface between LaAlO. • This system allows the electric field control and the on/off switching of the superconducting state. • We compare superconductivity at the interface and in bulk doped SrTiO. • We discuss the role of the interfacially induced Rashba type spin–orbit. • We briefly discuss superconductivity in cuprates, in electrical double layer transistor field effect experiments. • Recent observations of a high T{sub c} in a monolayer of FeSe deposited on SrTiO{sub 3} are presented. - Abstract: Low dimensional superconducting systems have been the subject of numerous studies for many years. In this article, we focus our attention on interfacial superconductivity, a field that has been boosted by the discovery of superconductivity at the interface between the two band insulators LaAlO{sub 3} and SrTiO{sub 3}. We explore the properties of this amazing system that allows the electric field control and on/off switching of superconductivity. We discuss the similarities and differences between bulk doped SrTiO{sub 3} and the interface system and the possible role of the interfacially induced Rashba type spin–orbit. We also, more briefly, discuss interface superconductivity in cuprates, in electrical double layer transistor field effect experiments, and the recent observation of a high T{sub c} in a monolayer of FeSe deposited on SrTiO{sub 3}.

  17. Physics colloquium: Single-electron counting in quantum metrology and in statistical mechanics

    CERN Multimedia

    Geneva University

    2011-01-01

    GENEVA UNIVERSITY Ecole de physique Département de physique nucléaire et corspusculaire 24, quai Ernest-Ansermet 1211 Genève 4 Tél.: (022) 379 62 73 Fax: (022) 379 69 92olé   Lundi 17 octobre 2011 17h00 - Ecole de Physique, Auditoire Stueckelberg PHYSICS COLLOQUIUM « Single-electron counting in quantum metrology and in statistical mechanics » Prof. Jukka Pekola Low Temperature Laboratory, Aalto University Helsinki, Finland   First I discuss the basics of single-electron tunneling and its potential applications in metrology. My main focus is in developing an accurate source of single-electron current for the realization of the unit ampere. I discuss the principle and the present status of the so-called single- electron turnstile. Investigation of errors in transporting electrons one by one has revealed a wealth of observations on fundamental phenomena in mesoscopic superconductivity, including individual Andreev...

  18. Tunable coupled nanomechanical resonators for single-electron transport

    International Nuclear Information System (INIS)

    Scheible, Dominik V; Erbe, Artur; Blick, Robert H

    2002-01-01

    Nano-electromechanical systems (NEMS) are ideal for sensor applications and ultra-sensitive force detection, since their mechanical degree of freedom at the nanometre scale can be combined with semiconductor nano-electronics. We present a system of coupled nanomechanical beam resonators in silicon which is mechanically fully Q-tunable ∼700-6000. This kind of resonator can also be employed as a mechanical charge shuttle via an insulated metallic island at the tip of an oscillating cantilever. Application of our NEMS as an electromechanical single-electron transistor (emSET) is introduced and experimental results are discussed. Three animation clips demonstrate the manufacturing process of the NEMS, the Q-tuning experiment and the concept of the emSET

  19. Carrier doping into a superconducting BaPb0.7Bi0.3O3‑δ epitaxial film using an electric double-layer transistor structure

    Science.gov (United States)

    Komori, S.; Kakeya, I.

    2018-06-01

    Doping evolution of the unconventional superconducting properties in BaBiO3-based compounds has yet to be clarified in detail due to the significant change of the oxygen concentration accompanied by the chemical substitution. We suggest that the carrier concentration of an unconventional superconductor, BaPb0.7Bi0.3O3‑δ , is controllable without inducing chemical or structural changes using an electric double-layer transistor structure. The critical temperature is found to decrease systematically with increasing carrier concentration.

  20. Single-electron tunnel junction array

    International Nuclear Information System (INIS)

    Likharev, K.K.; Bakhvalov, N.S.; Kazacha, G.S.; Serdyukova, S.I.

    1989-01-01

    The authors have carried out an analysis of statics and dynamics of uniform one-dimensional arrays of ultrasmall tunnel junctions. The correlated single-electron tunneling in the junctions of the array results in its behavior qualitatively similar to that of the Josephson transmission line. In particular, external electric fields applied to the array edges can inject single-electron-charged solitons into the array interior. Shape of such soliton and character of its interactions with other solitons and the array edges are very similar to those of the Josephson vortices (sine-Gordon solitons) in the Josephson transmission line. Under certain conditions, a coherent motion of the soliton train along the array is possible, resulting in generation of narrowband SET oscillations with frequency f/sub s/ = /e where is the dc current flowing along the array

  1. Nanospintronics: when spintronics meets single electron physics

    International Nuclear Information System (INIS)

    Seneor, Pierre; Bernand-Mantel, Anne; Petroff, Frederic

    2007-01-01

    As spintronics goes nano, new phenomena are predicted resulting from the interplay between spin dependent transport and single electron physics. The long term goal of manipulating spins one by one would open a promising path to quantum computing. Towards this end, there is an ever-growing effort to connect spin tanks (i.e. ferromagnetic leads) to smaller and smaller objects in order to study spintronics in reduced dimensions. As the dimensions are reduced, spin dependent transport is predicted to interplay with quantum and/or single electron charging effects. We review experiments and theories on the interplay between Coulomb blockade and spin properties (namely magneto-Coulomb effects) in structures where a single nano-object is connected to ferromagnetic leads. We then discuss briefly future directions in the emerging field of nanospintronics towards quantum dots, carbon nanotubes and single molecule magnets

  2. Sensing single electrons with single molecules

    International Nuclear Information System (INIS)

    Plakhotnik, Taras

    2007-01-01

    We propose a new methodology for probing transport of just one electron, a process of great importance both in nature and in artificial devices. Our idea for locating a single electron is analogues to the conventional GPS where signals from several satellites are used to locate a macro object. Using fluorescent molecules as tiny sensors, it is possible to determine 3D displacement vector of an electron

  3. Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

    Science.gov (United States)

    Schaal, S.; Barraud, S.; Morton, J. J. L.; Gonzalez-Zalba, M. F.

    2018-05-01

    Quantum computers require interfaces with classical electronics for efficient qubit control, measurement, and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offering potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-semiconductor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large-scale circuits. We demonstrate a CMOS single-electron memory cell composed of a single quantum dot and a transistor that locks charge on the quantum-dot gate. The single-electron memory cell is conditionally read out by gate-based dispersive sensing using a lumped-element L C resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully depleted silicon-on-insulator technology. We obtain a charge sensitivity of δ q =95 ×10-6e Hz-1 /2 when the quantum-dot readout is enabled by the control FET, comparable to results without the control FET. Additionally, we observe a single-electron retention time on the order of a second when storing a single-electron charge on the quantum dot at millikelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive readout in CMOS quantum devices opening the path for the development of an all-silicon quantum-classical processor.

  4. "Size-Independent" Single-Electron Tunneling.

    Science.gov (United States)

    Zhao, Jianli; Sun, Shasha; Swartz, Logan; Riechers, Shawn; Hu, Peiguang; Chen, Shaowei; Zheng, Jie; Liu, Gang-Yu

    2015-12-17

    Incorporating single-electron tunneling (SET) of metallic nanoparticles (NPs) into modern electronic devices offers great promise to enable new properties; however, it is technically very challenging due to the necessity to integrate ultrasmall (<10 nm) particles into the devices. The nanosize requirements are intrinsic for NPs to exhibit quantum or SET behaviors, for example, 10 nm or smaller, at room temperature. This work represents the first observation of SET that defies the well-known size restriction. Using polycrystalline Au NPs synthesized via our newly developed solid-state glycine matrices method, a Coulomb Blockade was observed for particles as large as tens of nanometers, and the blockade voltage exhibited little dependence on the size of the NPs. These observations are counterintuitive at first glance. Further investigations reveal that each observed SET arises from the ultrasmall single crystalline grain(s) within the polycrystal NP, which is (are) sufficiently isolated from the nearest neighbor grains. This work demonstrates the concept and feasibility to overcome orthodox spatial confinement requirements to achieve quantum effects.

  5. Single-electron quantum tomography in quantum Hall edge channels

    International Nuclear Information System (INIS)

    Grenier, Ch; Degiovanni, P; Herve, R; Bocquillon, E; Parmentier, F D; Placais, B; Berroir, J M; Feve, G

    2011-01-01

    We propose a quantum tomography protocol to measure single-electron coherence in quantum Hall edge channels, and therefore access for the first time the wavefunction of single-electron excitations propagating in ballistic quantum conductors. Its implementation would open the way to quantitative studies of single-electron decoherence and would provide a quantitative tool for analyzing single- to few-electron sources. We show how this protocol could be implemented using ultrahigh-sensitivity noise measurement schemes.

  6. Transistor data book

    International Nuclear Information System (INIS)

    1988-03-01

    It introduces how to use this book. It lists transistor data and index, which are Type No, Cross index, Germanium PNP low power transistors, silicon NPN low power transistors, Germanium PNP high power transistors, Switching transistors, transistor arrays, Miscellaneous transistors, types with U.S military specifications, direct replacement transistors, suggested replacement transistors, schematic drawings, outline drawings, device number keys and manufacturer's logos.

  7. Superconducting active impedance converter

    International Nuclear Information System (INIS)

    Ginley, D.S.; Hietala, V.M.; Martens, J.S.

    1993-01-01

    A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductors allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology. 12 figures

  8. Detection of On-Chip Generated Weak Microwave Radiation Using Superconducting Normal-Metal SET

    Directory of Open Access Journals (Sweden)

    Behdad Jalali-Jafari

    2016-01-01

    Full Text Available The present work addresses quantum interaction phenomena of microwave radiation with a single-electron tunneling system. For this study, an integrated circuit is implemented, combining on the same chip a Josephson junction (Al/AlO x /Al oscillator and a single-electron transistor (SET with the superconducting island (Al and normal-conducting leads (AuPd. The transistor is demonstrated to operate as a very sensitive photon detector, sensing down to a few tens of photons per second in the microwave frequency range around f ∼ 100 GHz. On the other hand, the Josephson oscillator, realized as a two-junction SQUID and coupled to the detector via a coplanar transmission line (Al, is shown to provide a tunable source of microwave radiation: controllable variations in power or in frequency were accompanied by significant changes in the detector output, when applying magnetic flux or adjusting the voltage across the SQUID, respectively. It was also shown that the effect of substrate-mediated phonons, generated by our microwave source, on the detector output was negligibly small.

  9. Single-electron tunneling in InP nanowires

    NARCIS (Netherlands)

    Franceschi, De S.; Dam, Van J.A.; Bakkers, E.P.A.M.; Feiner, L.F.; Gurevich, L.; Kouwenhoven, L.P.

    2003-01-01

    A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.

  10. Unijunction transistors

    International Nuclear Information System (INIS)

    1981-01-01

    The electrical characteristics of unijunction transistors can be modified by irradiation with electron beams in excess of 400 KeV and at a dose rate of 10 13 to 10 16 e/cm 2 . Examples are given of the effect of exposing the emitter-base junctions of transistors to such lattice defect causing radiation for a time sufficient to change the valley current of the transistor. (U.K.)

  11. Neuronal synchrony detection on single-electron neural networks

    International Nuclear Information System (INIS)

    Oya, Takahide; Asai, Tetsuya; Kagaya, Ryo; Hirose, Tetsuya; Amemiya, Yoshihito

    2006-01-01

    Synchrony detection between burst and non-burst spikes is known to be one functional example of depressing synapses. Kanazawa et al. demonstrated synchrony detection with MOS depressing synapse circuits. They found that the performance of a network with depressing synapses that discriminates between burst and random input spikes increases non-monotonically as the static device mismatch is increased. We designed a single-electron depressing synapse and constructed the same network as in Kanazawa's study to develop noise-tolerant single-electron circuits. We examined the temperature characteristics and explored possible architecture that enables single-electron circuits to operate at T > 0 K

  12. Coherent control of single electrons: a review of current progress

    Science.gov (United States)

    Bäuerle, Christopher; Glattli, D. Christian; Meunier, Tristan; Portier, Fabien; Roche, Patrice; Roulleau, Preden; Takada, Shintaro; Waintal, Xavier

    2018-05-01

    In this report we review the present state of the art of the control of propagating quantum states at the single-electron level and its potential application to quantum information processing. We give an overview of the different approaches that have been developed over the last few years in order to gain full control over a propagating single-electron in a solid-state system. After a brief introduction of the basic concepts, we present experiments on flying qubit circuits for ensemble of electrons measured in the low frequency (DC) limit. We then present the basic ingredients necessary to realise such experiments at the single-electron level. This includes a review of the various single-electron sources that have been developed over the last years and which are compatible with integrated single-electron circuits. This is followed by a review of recent key experiments on electron quantum optics with single electrons. Finally we will present recent developments in the new physics that has emerged using ultrashort voltage pulses. We conclude our review with an outlook and future challenges in the field.

  13. Single electron probes of fractional quantum hall states

    Science.gov (United States)

    Venkatachalam, Vivek

    When electrons are confined to a two dimensional layer with a perpendicular applied magnetic field, such that the ratio of electrons to flux quanta (nu) is a small integer or simple rational value, these electrons condense into remarkable new phases of matter that are strikingly different from the metallic electron gas that exists in the absence of a magnetic field. These phases, called integer or fractional quantum Hall (IQH or FQH) states, appear to be conventional insulators in their bulk, but behave as a dissipationless metal along their edge. Furthermore, electrical measurements of such a system are largely insensitive to the detailed geometry of how the system is contacted or even how large the system is... only the order in which contacts are made appears to matter. This insensitivity to local geometry has since appeared in a number of other two and three dimensional systems, earning them the classification of "topological insulators" and prompting an enormous experimental and theoretical effort to understand their properties and perhaps manipulate these properties to create robust quantum information processors. The focus of this thesis will be two experiments designed to elucidate remarkable properties of the metallic edge and insulating bulk of certain FQH systems. To study such systems, we can use mesoscopic devices known as single electron transistors (SETs). These devices operate by watching single electrons hop into and out of a confining box and into a nearby wire (for measurement). If it is initially unfavorable for an electron to leave the box, it can be made favorable by bringing another charge nearby, modifying the energy of the confined electron and pushing it out of the box and into the nearby wire. In this way, the SET can measure nearby charges. Alternatively, we can heat up the nearby wire to make it easier for electrons to enter and leave the box. In this way, the SET is a sensitive thermometer. First, by operating the SET as an

  14. Two-Channel Kondo Effect in a Modified Single Electron Transistor

    Science.gov (United States)

    Oreg, Yuval; Goldhaber-Gordon, David

    2003-04-01

    We suggest a simple system of two electron droplets which should display two-channel Kondo behavior at experimentally accessible temperatures. Stabilization of the two-channel Kondo fixed point requires fine control of the electrochemical potential in each droplet, which can be achieved by adjusting voltages on nearby gate electrodes. We study the conditions for obtaining this type of two-channel Kondo behavior, discuss the experimentally observable consequences, and explore the gener­alization to the multichannel Kondo case.

  15. (AASERT-93) Field-Effect-Controlled, Coulomb-BlocKage Single-Electron Transistor in Silicon

    National Research Council Canada - National Science Library

    Antoniadis, Dimitri

    1997-01-01

    .... A new substrate photoelectron effect in x-ray nanolithography was observed. A way to circumvent this apparent limit to the resolution limits of x-ray nanolithography for real devices was found...

  16. Charge transport through image charged stabilized states in a single molecule single electron transistor device

    International Nuclear Information System (INIS)

    Hedegard, Per; Bjornholm, Thomas

    2005-01-01

    The present paper gives an elaborate theoretical description of a new molecular charge transport mechanism applying to a single molecule trapped between two macroscopic electrodes in a solid state device. It is shown by a Hubbard type model of the electronic and electrostatic interactions, that the close proximity of metal electrodes may allow electrons to tunnel from the electrode directly into very localized image charge stabilized states on the molecule. Due to this mechanism, an exceptionally large number of redox states may be visited within an energy scale which would normally not allow the molecular HOMO-LUMO gap to be transversed. With a reasonable set of parameters, a good fit to recent experimental values may be obtained. The theoretical model is furthermore used to search for the physical boundaries of this effect, and it is found that a rather narrow geometrical space is available for the new mechanism to work: in the specific case of oligophenylenevinylene molecules recently explored in such devices several atoms in the terminal benzene rings need to be at van der Waal's distance to the electrode in order for the mechanism to work. The model predicts, that chemisorption of the terminal benzene rings too gold electrodes will impede the image charge effect very significantly because the molecule is pushed away from the electrode by the covalent thiol-gold bond

  17. Transistor Effect in Improperly Connected Transistors.

    Science.gov (United States)

    Luzader, Stephen; Sanchez-Velasco, Eduardo

    1996-01-01

    Discusses the differences between the standard representation and a realistic representation of a transistor. Presents an experiment that helps clarify the explanation of the transistor effect and shows why transistors should be connected properly. (JRH)

  18. Monolayer Superconductivity in WS2

    NARCIS (Netherlands)

    Zheliuk, Oleksandr; Lu, Jianming; Yang, Jie; Ye, Jianting

    Superconductivity in monolayer tungsten disulfide (2H-WS2) is achieved by strong electrostatic electron doping of an electric double-layer transistor (EDLT). Single crystals of WS2 are grown by a scalable method - chemical vapor deposition (CVD) on standard Si/SiO2 substrate. The monolayers are

  19. Single electron counting using a dual MCP assembly

    International Nuclear Information System (INIS)

    Yang, Yuzhen; Liu, Shulin; Zhao, Tianchi; Yan, Baojun; Wang, Peiliang; Yu, Yang; Lei, Xiangcui; Yang, Luping; Wen, Kaile; Qi, Ming

    2016-01-01

    The gain, pulse height resolution and peak-to-valley ratio of single electrons detected by using a Chevron configured Microchannel Plate (MCP) assembly are studied. The two MCPs are separated by a 280 µm gap and are biased by four electrodes. The purpose of the study is to determine the optimum bias voltage arrangements for single electron counting. By comparing the results of various bias voltage combinations, we conclude that good performance for the electron counting can be achieved by operating the MCP assembly in saturation mode. In addition, by applying a small reverse bias voltage across the gap while adjusting the bias voltages of the MCPs, optimum performance of electron counting can be obtained. - Highlights: • Dual MCPs assembly with four electrodes using different voltage combinations has been investigated for single electron counting. • Both the MCP voltages and the gap voltage can affect the gain, pulse height resolution and P/V ratio. • A high gain of the first stage MCP, a saturation mode of the second stage MCP and an appropriately reverse gap voltage can improve the resolution greatly. • The optimum voltage arrangements is significant for the design of MCP detectors in single electron counting applications.

  20. A single electron in a Bose-Einstein condensate

    International Nuclear Information System (INIS)

    Balewski, Jonathan Benedikt

    2014-01-01

    This thesis deals with the production and study of Rydberg atoms in ultracold quantum gases. Especially a single electron in a Bose-Einstein condensate can be realized. This new idea, its experimental realization and theoretical description, as well as the development of application probabilities in a manifold of fields form the main topic of this thesis.

  1. State selective single-electron capture in O6++Nacollisions

    NARCIS (Netherlands)

    Knoop, S; Keim, M; Ludde, HJ; Kirchner, T; Morgenstern, [No Value; Hoekstra, R

    2005-01-01

    Single-electron capture in O6+ + Na collisions at 1-9 keV/amu collision energy has been studied both experimentally and theoretically. Partial cross sections for electron capture into n = 5, 6, 7, 8 and n >= 9 have been obtained from target recoil momenta measured by the technique of MOTRIMS and are

  2. Simulation of single-electron tunnelling circuits using SPICE

    NARCIS (Netherlands)

    Van de Haar, R.

    2004-01-01

    Single-electron tunnelling (SET) devices have very promising properties, like their extremely low power consumption, their extremely high switching speeds and their extremely small physical dimensions. Since the field of SET devices is far from being fully exploited, and their device properties seem

  3. Subelectron transport in single-electron-tunneling arrays

    Science.gov (United States)

    Kaplan, Daniel M.; Sverdlov, Victor A.; Likharev, Konstantin K.

    2002-05-01

    We have shown that a special distribution of background charges in islands of single-electron-tunneling arrays can completely suppress its Coulomb blockade and at the same time reduce substantially its shot noise at low applied voltages. In particular the Fano factor F can approach the minimum value Fmin=1/Nopalescence.

  4. Single electron capture in N^+ -(Ne, Kr, Xe) collisions

    Science.gov (United States)

    Reyes, Pedro G.; Castillo, Fermin; Martinez, Horacio

    2001-05-01

    Total cross sections for single electron capture of N^+ ions impinging on Ne, Kr and Xe were measured in the energy range of 1.5 to 5.0 keV. The electron capture cross sections for all the targets studied are found to be in excellent agreement with previous data in the low-energy range. The present data together with previous measurements give a general shape of the whole curve of single electron capture cross sections for the N^+ - Ne system. For the cases of N^+ - (Kr, Xe) systems, semiempirical calculation using the two-state approximation are in very good agreement with present cross sections data. Research supported by DGAPA IN-100392 and CONACyT 32175-E

  5. Applied superconductivity

    CERN Document Server

    Newhouse, Vernon L

    1975-01-01

    Applied Superconductivity, Volume II, is part of a two-volume series on applied superconductivity. The first volume dealt with electronic applications and radiation detection, and contains a chapter on liquid helium refrigeration. The present volume discusses magnets, electromechanical applications, accelerators, and microwave and rf devices. The book opens with a chapter on high-field superconducting magnets, covering applications and magnet design. Subsequent chapters discuss superconductive machinery such as superconductive bearings and motors; rf superconducting devices; and future prospec

  6. Modeling and analysis of energy quantization effects on single electron inverter performance

    Science.gov (United States)

    Dan, Surya Shankar; Mahapatra, Santanu

    2009-08-01

    In this paper, for the first time, the effects of energy quantization on single electron transistor (SET) inverter performance are analyzed through analytical modeling and Monte Carlo simulations. It is shown that energy quantization mainly changes the Coulomb blockade region and drain current of SET devices and thus affects the noise margin, power dissipation, and the propagation delay of SET inverter. A new analytical model for the noise margin of SET inverter is proposed which includes the energy quantization effects. Using the noise margin as a metric, the robustness of SET inverter is studied against the effects of energy quantization. A compact expression is developed for a novel parameter quantization threshold which is introduced for the first time in this paper. Quantization threshold explicitly defines the maximum energy quantization that an SET inverter logic circuit can withstand before its noise margin falls below a specified tolerance level. It is found that SET inverter designed with CT:CG=1/3 (where CT and CG are tunnel junction and gate capacitances, respectively) offers maximum robustness against energy quantization.

  7. Recent advances in fullerene superconductivity

    CERN Document Server

    Margadonna, S

    2002-01-01

    Superconducting transition temperatures in bulk chemically intercalated fulleride salts reach 33 K at ambient pressure and in hole-doped C sub 6 sub 0 derivatives in field-effect-transistor (FET) configurations, they reach 117 K. These advances pose important challenges for our understanding of high-temperature superconductivity in these highly correlated organic metals. Here we review the structures and properties of intercalated fullerides, paying particular attention to the correlation between superconductivity and interfullerene separation, orientational order/disorder, valence state, orbital degeneracy, low-symmetry distortions, and metal-C sub 6 sub 0 interactions. The metal-insulator transition at large interfullerene separations is discussed in detail. An overview is also given of the exploding field of gate-induced superconductivity of fullerenes in FET electronic devices.

  8. Single-electron capture in He2+-D2 collisions

    International Nuclear Information System (INIS)

    Bordenave-Montesquieu, D.; Dagnac, R.

    1994-01-01

    Doubly differential cross sections of single-electron capture were measured for He 2+ impinging on a molecular deuterium target. The investigated collision energies are 4, 6 and 8 keV and the scattering angles range from 10' to 2 o 30' (laboratory frame). The exothermic capture leading to He + (1s) + D 2 +* was found to be the most important process at low energies and angles, whereas the endothermic channels leading to dissociative capture become the main processes at high scattering angles, i.e. at small impact parameters. (author)

  9. Scaling of ion implanted Si:P single electron devices

    International Nuclear Information System (INIS)

    Escott, C C; Hudson, F E; Chan, V C; Petersson, K D; Clark, R G; Dzurak, A S

    2007-01-01

    We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n + ) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number

  10. Experimental realization of a Szilard engine with a single electron.

    Science.gov (United States)

    Koski, Jonne V; Maisi, Ville F; Pekola, Jukka P; Averin, Dmitri V

    2014-09-23

    The most succinct manifestation of the second law of thermodynamics is the limitation imposed by the Landauer principle on the amount of heat a Maxwell demon (MD) can convert into free energy per single bit of information obtained in a measurement. We propose and realize an electronic MD based on a single-electron box operated as a Szilard engine, where kBT ln 2 of heat is extracted from the reservoir at temperature T per one bit of created information. The information is encoded in the position of an extra electron in the box.

  11. Scaling of ion implanted Si:P single electron devices

    Energy Technology Data Exchange (ETDEWEB)

    Escott, C C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Hudson, F E [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Chan, V C [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Petersson, K D [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia); Clark, R G [Centre for Quantum Computer Technology, School of Physics, UNSW, Sydney, 2052 (Australia); Dzurak, A S [Centre for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, UNSW, Sydney, NSW 2052 (Australia)

    2007-06-13

    We present a modelling study on the scaling prospects for phosphorus in silicon (Si:P) single electron devices using readily available commercial and free-to-use software. The devices comprise phosphorus ion implanted, metallically doped (n{sup +}) dots (size range 50-500 nm) with source and drain reservoirs. Modelling results are compared to measurements on fabricated devices and discussed in the context of scaling down to few-electron structures. Given current fabrication constraints, we find that devices with 70-75 donors per dot should be realizable. We comment on methods for further reducing this number.

  12. Metal nanoparticle film-based room temperature Coulomb transistor.

    Science.gov (United States)

    Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

    2017-07-01

    Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.

  13. Metal nanoparticle film–based room temperature Coulomb transistor

    Science.gov (United States)

    Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

    2017-01-01

    Single-electron transistors would represent an approach to developing less power–consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations. PMID:28740864

  14. Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating

    NARCIS (Netherlands)

    Shi, Wu; Ye, Jianting; Zhang, Yijin; Suzuki, Ryuji; Yoshida, Masaro; Miyazaki, Jun; Inoue, Naoko; Saito, Yu; Iwasa, Yoshihiro

    2015-01-01

    Functionalities of two-dimensional (2D) crystals based on semiconducting transition metal dichalcogenides (TMDs) have now stemmed from simple field effect transistors (FETs) to a variety of electronic and opto-valleytronic devices, and even to superconductivity. Among them, superconductivity is the

  15. Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET

    Science.gov (United States)

    Uddin, Wasi; Georgiev, Yordan M.; Maity, Sarmistha; Das, Samaresh

    2017-09-01

    We report 1D electron transport of silicon junctionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant-dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.

  16. MRPC prototypes for NeuLAND tested using the single electron mode of ELBE/Dresden

    Energy Technology Data Exchange (ETDEWEB)

    Yakorev, Dmitry; Bemmerer, Daniel; Elekes, Zoltan; Kempe, Mathias; Stach, Daniel; Wagner, Andreas [Forschungszentrum Dresden-Rossendorf (FZD), Dresden (Germany); Aumann, Tom; Boretzky, Konstanze; Caesar, Christoph; Ciobanu, Mircea; Hehner, Joerg; Heil, Michael; Nusair, Omar; Reifarth, Rene; Simon, Haik [GSI, Darmstadt (Germany); Elvers, Michael; Maroussov, Vassili; Zilges, Andreas [Universitaet Koeln (Germany); Zuber, Kai [TU Dresden (Germany)

    2010-07-01

    The NeuLAND detector at the R{sup 3}B experiment at the future FAIR facility in Darmstadt aims to detect fast neutrons (0.2-1.0 GeV) with high time and spatial resolutions ({sigma}{sub t}<100 ps, {sigma}{sub x,y,z}<1 cm). Prototypes for the NeuLAND detector have been built at FZD and GSI and then studied using the 32 MeV pulsed electron beam at the superconducting electron accelerator ELBE in Dresden, Germany. Owing to the new, single-electron per bunch mode of operation, a rapid validation of the design criteria ({>=}90% efficiency for minimum ionizing particles, {sigma} {<=} 100 ps time resolution) was possible. Tested properties of the prototypes include glass thickness, spacing of the central anode, and a comparison of single-ended and differential readout. Tested frontend electronics schemes include FOPI (single-ended), PADI-based (both single-ended and differential mode tested), and ALICE (differential).

  17. Microwave Enhanced Cotunneling in SET Transistors

    DEFF Research Database (Denmark)

    Manscher, Martin; Savolainen, M.; Mygind, Jesper

    2003-01-01

    Cotunneling in single electron tunneling (SET) devices is an error process which may severely limit their electronic and metrologic applications. Here is presented an experimental investigation of the theory for adiabatic enhancement of cotunneling by coherent microwaves. Cotunneling in SET...... transistors has been measured as function of temperature, gate voltage, frequency, and applied microwave power. At low temperatures and applied power levels, including also sequential tunneling, the results can be made consistent with theory using the unknown damping in the microwave line as the only free...

  18. Synchronizing a single-electron shuttle to an external drive

    Science.gov (United States)

    Moeckel, Michael J.; Southworth, Darren R.; Weig, Eva M.; Marquardt, Florian

    2014-04-01

    The nanomechanical single-electron shuttle is a resonant system in which a suspended metallic island oscillates between and impacts at two electrodes. This setup holds promise for one-by-one electron transport and the establishment of an absolute current standard. While the charge transported per oscillation by the nanoscale island will be quantized in the Coulomb blockade regime, the frequency of such a shuttle depends sensitively on many parameters, leading to drift and noise. Instead of considering the nonlinearities introduced by the impact events as a nuisance, here we propose to exploit the resulting nonlinear dynamics to realize a highly precise oscillation frequency via synchronization of the shuttle self-oscillations to an external signal. We link the established phenomenological description of synchronization based on the Adler equation to the microscopic nonlinear dynamics of the electron shuttle by calculating the effective Adler constant analytically in terms of the microscopic parameters.

  19. Synchronizing a single-electron shuttle to an external drive

    International Nuclear Information System (INIS)

    Moeckel, Michael J; Southworth, Darren R; Weig, Eva M; Marquardt, Florian

    2014-01-01

    The nanomechanical single-electron shuttle is a resonant system in which a suspended metallic island oscillates between and impacts at two electrodes. This setup holds promise for one-by-one electron transport and the establishment of an absolute current standard. While the charge transported per oscillation by the nanoscale island will be quantized in the Coulomb blockade regime, the frequency of such a shuttle depends sensitively on many parameters, leading to drift and noise. Instead of considering the nonlinearities introduced by the impact events as a nuisance, here we propose to exploit the resulting nonlinear dynamics to realize a highly precise oscillation frequency via synchronization of the shuttle self-oscillations to an external signal. We link the established phenomenological description of synchronization based on the Adler equation to the microscopic nonlinear dynamics of the electron shuttle by calculating the effective Adler constant analytically in terms of the microscopic parameters

  20. A photon position sensor consisting of single-electron circuits

    International Nuclear Information System (INIS)

    Kikombo, Andrew Kilinga; Amemiya, Yoshihito; Tabe, Michiharu

    2009-01-01

    This paper proposes a solid-state sensor that can detect the position of incident photons with a high spatial resolution. The sensor consists of a two-dimensional array of single-electron oscillators, each coupled to its neighbors through coupling capacitors. An incident photon triggers an excitatory circular wave of electron tunneling in the oscillator array. The wave propagates in all directions to reach the periphery of the array. By measuring the arrival time of the wave at the periphery, we can know the position of the incident photon. The tunneling wave's generation, propagation, arrival at the array periphery, and the determination of incident photon positions are demonstrated with the results of Monte Carlo based computer simulations.

  1. Single-electron tunneling in double-barrier nanostructures

    International Nuclear Information System (INIS)

    Goldman, V.J.; Su, B.; Cunningham, J.E.

    1992-01-01

    In this paper, the authors review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models

  2. Superconductivity - applications

    International Nuclear Information System (INIS)

    The paper deals with the following subjects: 1) Electronics and high-frequency technology, 2) Superconductors for energy technology, 3) Superconducting magnets and their applications, 4) Electric machinery, 5) Superconducting cables. (WBU) [de

  3. Energy and temperature fluctuations in the single electron box

    International Nuclear Information System (INIS)

    Berg, Tineke L van den; Brange, Fredrik; Samuelsson, Peter

    2015-01-01

    In mesoscopic and nanoscale systems at low temperatures, charge carriers are typically not in thermal equilibrium with the surrounding lattice. The resulting, non-equilibrium dynamics of electrons has only begun to be explored. Experimentally the time-dependence of the electron temperature (deviating from the lattice temperature) has been investigated in small metallic islands. Motivated by these experiments, we investigate theoretically the electronic energy and temperature fluctuations in a metallic island in the Coulomb blockade regime, tunnel coupled to an electronic reservoir, i.e. a single electron box. We show that electronic quantum tunnelling between the island and the reservoir, in the absence of any net charge or energy transport, induces fluctuations of the island electron temperature. The full distribution of the energy transfer as well as the island temperature is derived within the framework of full counting statistics. In particular, the low-frequency temperature fluctuations are analysed, fully accounting for charging effects and non-zero reservoir temperature. The experimental requirements for measuring the predicted temperature fluctuations are discussed. (paper)

  4. Single-electron charging effects and implications for tunneling measurements of the high-T/sub c/ superconductors

    International Nuclear Information System (INIS)

    Barner, J.B.; Honkanen, M.J.; Ruggiero, S.T.; Mullen, K.; Ben-Jacob, E.; Pelton, A.R.; Michigan Univ., Ann Arbor, MI

    1989-01-01

    The authors present a theory for the dynamics of two voltage-biased, ultra-small-capacitance tunnel junctions connected in series when one or more electrodes are superconducting and experiments performed on parallel arrays of such junctions. Using the semiclassical model, they find that the I-V characteristics display steps and therefore multiple peaks in dI/dV, corresponding to the time-average occupation of the interjunction region by integral numbers of electrons. The voltage at which the first step is located depends on the superconducting gap, Δ(T), and the capacitances of the junctions. The spacing between subsequent steps depends solely on the capacitances. They discuss electron tunneling results performed on metal/Al/sub 2/O/sub 3//2-10 nm-diameter metal particles/Al/sub 2/O/sub 3//metal junctions where this multiple-peak structure is observed. They present preliminary tunneling results in junctions employing Pb-particles, where they observe a shift of the peaks when the sample is cooled below T/sub c/ of Pb consistent with theory. Taken together, these results indicate that the multiple-peak structure commonly observed in tunneling data of high-T/sub c/ oxide superconductors can be explained in terms of charging effects in a material with a single superconducting gap. Finally, they discuss possible applications in a new type of transistor element

  5. Nanowire transistors physics of devices and materials in one dimension

    CERN Document Server

    Colinge, Jean-Pierre

    2016-01-01

    From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in ...

  6. Large scale electromechanical transistor with application in mass sensing

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Leisheng; Li, Lijie, E-mail: L.Li@swansea.ac.uk [Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea SA2 8PP (United Kingdom)

    2014-12-07

    Nanomechanical transistor (NMT) has evolved from the single electron transistor, a device that operates by shuttling electrons with a self-excited central conductor. The unfavoured aspects of the NMT are the complexity of the fabrication process and its signal processing unit, which could potentially be overcome by designing much larger devices. This paper reports a new design of large scale electromechanical transistor (LSEMT), still taking advantage of the principle of shuttling electrons. However, because of the large size, nonlinear electrostatic forces induced by the transistor itself are not sufficient to drive the mechanical member into vibration—an external force has to be used. In this paper, a LSEMT device is modelled, and its new application in mass sensing is postulated using two coupled mechanical cantilevers, with one of them being embedded in the transistor. The sensor is capable of detecting added mass using the eigenstate shifts method by reading the change of electrical current from the transistor, which has much higher sensitivity than conventional eigenfrequency shift approach used in classical cantilever based mass sensors. Numerical simulations are conducted to investigate the performance of the mass sensor.

  7. Doped Organic Transistors.

    Science.gov (United States)

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  8. Superconductivity revisited

    CERN Document Server

    Dougherty, Ralph

    2013-01-01

    While the macroscopic phenomenon of superconductivity is well known and in practical use worldwide in many industries, including MRIs in medical diagnostics, the current theoretical paradigm for superconductivity (BCS theory) suffers from a number of limitations, not the least of which is an adequate explanation of high temperature superconductivity. This book reviews the current theory and its limitations and suggests new ideas and approaches in addressing these issues. The central objective of the book is to develop a new, coherent, understandable theory of superconductivity directly based on molecular quantum mechanics.

  9. SOI Transistor measurement techniques using body contacted transistors

    International Nuclear Information System (INIS)

    Worley, E.R.; Williams, R.

    1989-01-01

    Measurements of body contacted SOI transistors are used to isolate parameters of the back channel and island edge transistor. Properties of the edge and back channel transistor have been measured before and after X-ray irradiation (ARACOR). The unique properties of the edge transistor are shown to be a result of edge geometry as confirmed by a two dimensional transistor simulator

  10. Measurement of single electron and nuclear spin states based on optically detected magnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Berman, Gennady P [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Bishop, Alan R [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Chernobrod, Boris M [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Hawley, Marilyn E [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Brown, Geoffrey W [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Tsifrinovich, Vladimir I [Polytechnic University, Brooklyn, NY 11201 (United States)

    2006-05-15

    A novel approach for measurement of single electron and nuclear spin states is suggested. Our approach is based on optically detected magnetic resonance in a nano-probe located at the apex of an AFM tip. The method provides single electron spin sensitivity with nano-scale spatial resolution.

  11. Measurement of single electron and nuclear spin states based on optically detected magnetic resonance

    International Nuclear Information System (INIS)

    Berman, Gennady P; Bishop, Alan R; Chernobrod, Boris M; Hawley, Marilyn E; Brown, Geoffrey W; Tsifrinovich, Vladimir I

    2006-01-01

    A novel approach for measurement of single electron and nuclear spin states is suggested. Our approach is based on optically detected magnetic resonance in a nano-probe located at the apex of an AFM tip. The method provides single electron spin sensitivity with nano-scale spatial resolution

  12. Superconducting cermets

    International Nuclear Information System (INIS)

    Goyal, A.; Funkenbusch, P.D.; Chang, G.C.S.; Burns, S.J.

    1988-01-01

    Two distant classes of superconducting cermets can be distinguished, depending on whether or not a fully superconducting skeleton is established. Both types of cermets have been successfully fabricated using non-noble metals, with as high as 60wt% of the metal phase. The electrical, magnetic and mechanical behavior of these composites is discussed

  13. Superconducting technology

    International Nuclear Information System (INIS)

    2010-01-01

    Superconductivity has a long history of about 100 years. Over the past 50 years, progress in superconducting materials has been mainly in metallic superconductors, such as Nb, Nb-Ti and Nb 3 Sn, resulting in the creation of various application fields based on the superconducting technologies. High-T c superconductors, the first of which was discovered in 1986, have been changing the future vision of superconducting technology through the development of new application fields such as power cables. On basis of these trends, future prospects of superconductor technology up to 2040 are discussed. In this article from the viewpoints of material development and the applications of superconducting wires and electronic devices. (author)

  14. A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor

    DEFF Research Database (Denmark)

    See, A. M.; Klochan, O.; Micolich, P.

    2013-01-01

    . The temperature and magnetic field dependences of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin......, and the interference effects which arise from coherent tunnelling of electrons in the quantum dot....

  15. Characterizing the response of a scintillator-based detector to single electrons

    International Nuclear Information System (INIS)

    Sang, Xiahan; LeBeau, James M.

    2016-01-01

    Here we report the response of a high angle annular dark field scintillator-based detector to single electrons. We demonstrate that care must be taken when determining the single electron intensity as significant discrepancies can occur when quantifying STEM images with different methods. To account for the detector response, we first image the detector using very low beam currents (∼8 fA), and subsequently model the interval between consecutive single electrons events. We find that single electrons striking the detector present a wide distribution of intensities, which we show is not described by a simple function. Further, we present a method to accurately account for the electrons within the incident probe when conducting quantitative imaging. The role detector settings play on determining the single electron intensity is also explored. Finally, we extend our analysis to describe the response of the detector to multiple electron events within the dwell interval of each pixel. - Highlights: • We show that the statistical description of single electron response of scintillator based detectors can be measured using a combination of small beam currents and short dwell times. • The average intensity from the probability distribution function can be used to normalize STEM images regardless of beam current and contrast settings. • We obtain consistent QSTEM normalization results from the single electron method and the conventional detector scan method.

  16. Organic superconductivity

    International Nuclear Information System (INIS)

    Jerome, D.

    1980-01-01

    We present the experimental evidences for the existence of a superconducting state in the Quasi One Dimensional organic conductor (TMTSF) 2 PF 6 . Superconductivity occuring at 1 K under 12 kbar is characterized by a zero resistance diamagnetic state. The anistropy of the upper critical field of this type II superconductor is consistent with the band structure anistropy. We present evidences for the existence of large superconducting precursor effects giving rise to a dominant paraconductive contribution below 40 K. We also discuss the anomalously large pressure dependence of T sb(s), which drops to 0.19 K under 24 kbar in terms of the current theories. (author)

  17. Superconducting linac

    International Nuclear Information System (INIS)

    Bollinger, L.M.; Shepard, K.W.; Wangler, T.P.

    1978-01-01

    This project has two goals: to design, build, and test a small superconducting linac to serve as an energy booster for heavy ions from an FN tandem electrostatic accelerator, and to investigate various aspects of superconducting rf technology. The main design features of the booster are described, a status report on various components (resonators, rf control system, linac control system, cryostats, buncher) is given, and plans for the near future are outlined. Investigations of superconducting-linac technology concern studies on materials and fabrication techniques, resonator diagnostic techniques, rf-phase control, beam dynamics computer programs, asymmetry in accelerating field, and surface-treatment techniques. The overall layout of the to-be-proposed ATLAS, the Argonne Tandem-Linac Accelerator System, is shown; the ATLAS would use superconducting technology to produce beams of 5 to 25 MeV/A. 6 figures

  18. Superconducting materials

    International Nuclear Information System (INIS)

    Kormann, R.; Loiseau, R.; Marcilhac, B.

    1989-01-01

    The invention concerns superconducting ceramics containing essentially barium, calcium and copper fluorinated oxides with close offset and onset temperatures around 97 K and 100 K and containing neither Y nor rare earth [fr

  19. Hole superconductivity

    International Nuclear Information System (INIS)

    Hirsch, J.E.; Marsiglio, F.

    1989-01-01

    The authors review recent work on a mechanism proposed to explain high T c superconductivity in oxides as well as superconductivity of conventional materials. It is based on pairing of hole carriers through their direct Coulomb interaction, and gives rise to superconductivity because of the momentum dependence of the repulsive interaction in the solid state environment. In the regime of parameters appropriate for high T c oxides this mechanism leads to characteristic signatures that should be experimentally verifiable. In the regime of conventional superconductors most of these signatures become unobservable, but the characteristic dependence of T c on band filling survives. New features discussed her include the demonstration that superconductivity can result from repulsive interactions even if the gap function does not change sign and the inclusion of a self-energy correction to the hole propagator that reduces the range of band filling where T c is not zero

  20. Superconducted tour

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1988-09-15

    Superconductivity - the dramatic drop in electrical resistance in certain materials at very low temperatures - has grown rapidly in importance over the past two or three decades to become a key technology for high energy particle accelerators. It was in this setting that a hundred students and 15 lecturers met in Hamburg in June for a week's course on superconductivity in particle accelerators, organized by the CERN Accelerator School and the nearby DESY Laboratory.

  1. Superconductivity: Phenomenology

    International Nuclear Information System (INIS)

    Falicov, L.M.

    1988-08-01

    This document discusses first the following topics: (a) The superconducting transition temperature; (b) Zero resistivity; (c) The Meissner effect; (d) The isotope effect; (e) Microwave and optical properties; and (f) The superconducting energy gap. Part II of this document investigates the Ginzburg-Landau equations by discussing: (a) The coherence length; (b) The penetration depth; (c) Flux quantization; (d) Magnetic-field dependence of the energy gap; (e) Quantum interference phenomena; and (f) The Josephson effect

  2. Investigations of single-electron avalanches in a proportional drift tube

    International Nuclear Information System (INIS)

    Anderson, W.S.; Armitage, J.C.; Chevreau, P.; Heinrich, J.G.; Lu, C.; McDonald, I.; McDonald, K.T.; Miller, B.; Secrest, D.; Weckel, J.

    1990-01-01

    Detailed information on single-electron drift and avalanche behavior has a basic interest in an investigation of gas-chamber performance. Its timing, avalanche distribution, attachment by the working gas mixtures, etc., provide various criteria for choosing the best suitable gas mixture under a specific experimental circumstance. Investigations of single-electron avalanches in a proportional drift tube have been carried out with a pulsed N 2 laser. The study consists of two aspects: timing properties, and fluctuations in the gas avalanche

  3. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  4. Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy

    International Nuclear Information System (INIS)

    Tyszka, K.; Moraru, D.; Samanta, A.; Mizuno, T.; Tabe, M.; Jabłoński, R.

    2015-01-01

    We comparatively study donor-induced quantum dots in Si nanoscale-channel transistors for a wide range of doping concentration by analysis of single-electron tunneling transport and surface potential measured by Kelvin probe force microscopy (KPFM). By correlating KPFM observations of donor-induced potential landscapes with simulations based on Thomas-Fermi approximation, it is demonstrated that single-electron tunneling transport at lowest gate voltages (for smallest coverage of screening electrons) is governed most frequently by only one dominant quantum dot, regardless of doping concentration. Doping concentration, however, primarily affects the internal structure of the quantum dot. At low concentrations, individual donors form most of the quantum dots, i.e., “donor-atom” quantum dots. In contrast, at high concentrations above metal-insulator transition, closely placed donors instead of individual donors form more complex quantum dots, i.e., “donor-cluster” quantum dots. The potential depth of these “donor-cluster” quantum dots is significantly reduced by increasing gate voltage (increasing coverage of screening electrons), leading to the occurrence of multiple competing quantum dots

  5. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  6. Superconducting cyclotrons

    International Nuclear Information System (INIS)

    Blosser, H.G.; Johnson, D.A.; Burleigh, R.J.

    1976-01-01

    Superconducting cyclotrons are particularly appropriate for acceleration of heavy ions. A review is given of design features of a superconducting cyclotron with energy 440 (Q 2 /A) MeV. A strong magnetic field (4.6 tesla average) leads to small physical size (extraction radius 65 cm) and low construction costs. Operating costs are also low. The design is based on established technology (from present cyclotrons and from large bubble chambers). Two laboratories (in Chalk River, Canada and in East Lansing, Michigan) are proceeding with construction of full-scale prototype components for such cyclotrons

  7. Energy-Filtered Tunnel Transistor: A New Device Concept Toward Extremely-Low Energy Consumption Electronics

    Science.gov (United States)

    2015-12-17

    other provision of law , no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a...excellent agreement with experimental findings. The energy filtering has been applied to single-electron transport and clear Coulomb staircases and... Coulomb oscillations have been demonstrated at room temperature. A new architecture of energy-filtered cold electron transistors has been designed and

  8. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  9. Organic electrochemical transistors

    KAUST Repository

    Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Ró isí n M.; Berggren, Magnus; Malliaras, George G.

    2018-01-01

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume

  10. Vertical organic transistors.

    Science.gov (United States)

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-11-11

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

  11. Ionization and single electron capture in collision of highly charged Ar16+ ions with helium

    International Nuclear Information System (INIS)

    Wang Fei; Gou Bingcong

    2008-01-01

    This paper uses the two-centre atomic orbital close-coupling method to study the ionization and the single electron capture in collision of highly charged Ar 16+ ions with He atoms in the velocity range of 1.2–1.9 a.u. The relative importance of single ionization (SI) to single capture (SC) is explored. The comparison between the calculation and experimental data shows that the SI/SC cross section ratios from this work are in good agreement with experimental data. The total single electron ionization cross sections and the total single electron capture cross sections are also given for this collision. The investigation of the partial electron capture cross section shows a general tendency of capture to larger n and l with increasing velocity from 1.2 to 1.9 a.u

  12. Non-linear phenomena in electronic systems consisting of coupled single-electron oscillators

    International Nuclear Information System (INIS)

    Kikombo, Andrew Kilinga; Hirose, Tetsuya; Asai, Tetsuya; Amemiya, Yoshihito

    2008-01-01

    This paper describes non-linear dynamics of electronic systems consisting of single-electron oscillators. A single-electron oscillator is a circuit made up of a tunneling junction and a resistor, and produces simple relaxation oscillation. Coupled with another, single electron oscillators exhibit complex behavior described by a combination of continuous differential equations and discrete difference equations. Computer simulation shows that a double-oscillator system consisting of two coupled oscillators produces multi-periodic oscillation with a single attractor, and that a quadruple-oscillator system consisting of four oscillators also produces multi-periodic oscillation but has a number of possible attractors and takes one of them determined by initial conditions

  13. Digital processing with single electrons for arbitrary waveform generation of current

    Science.gov (United States)

    Okazaki, Yuma; Nakamura, Shuji; Onomitsu, Koji; Kaneko, Nobu-Hisa

    2018-03-01

    We demonstrate arbitrary waveform generation of current using a GaAs-based single-electron pump. In our experiment, a digital processing algorithm known as delta-sigma modulation is incorporated into single-electron pumping to generate a density-modulated single-electron stream, by which we demonstrate the generation of arbitrary waveforms of current including sinusoidal, square, and triangular waves with a peak-to-peak amplitude of approximately 10 pA and an output bandwidth ranging from dc to close to 1 MHz. The developed current generator can be used as the precise and calculable current reference required for measurements of current noise in low-temperature experiments.

  14. Experimental study of single-electron loss by Ar+ ions in rare-gas atoms

    Science.gov (United States)

    Reyes, P. G.; Castillo, F.; Martínez, H.

    2001-04-01

    Absolute differential and total cross sections for single-electron loss were measured for Ar+ ions on rare-gas atoms in the laboratory energy range of 1.5 to 5.0 keV. The electron loss cross sections for all the targets studied are found to be in the order of magnitude between 10-19 and 10-22 cm2, and show a monotonically increasing behaviour as a function of the incident energy. The behaviour of the total single-electron loss cross sections with the atomic target number, Zt, shows different dependences as the collision energy increases. In all cases the present results display experimental evidence of saturation in the single-electron loss cross section as the atomic number of the target increases.

  15. Single-electron pulse-height spectra in thin-gap parallel-plate chambers

    CERN Document Server

    Fonte, Paulo J R; Peskov, Vladimir; Policarpo, Armando

    1999-01-01

    Single-electron pulse-height spectra were measured in 0.6 and 1.2 mm parallel-plate chambers developed for the TOF system of the ALICE /LHC-HI experiment. Mixtures of Ar with ethane, isobutane, and SF/sub 6/ were studied. The observed spectrum shows a clear peak for all gases, suggesting efficient single-electron detection in thin parallel-plate structures. The pulse-height spectrum can be described by the weighted sum of an exponential and a Polya distribution, the Polya contribution becoming more important at higher gains. Additionally, it was found that the maximum gain, above 10/sup 6/, is limited by the appearance of streamers and depends weakly on the gas composition. The suitability of each mixture for single-electron detection is also quantitatively assessed. (8 refs).

  16. Measurement and control of quasiparticle dynamics in a superconducting qubit.

    Science.gov (United States)

    Wang, C; Gao, Y Y; Pop, I M; Vool, U; Axline, C; Brecht, T; Heeres, R W; Frunzio, L; Devoret, M H; Catelani, G; Glazman, L I; Schoelkopf, R J

    2014-12-18

    Superconducting circuits have attracted growing interest in recent years as a promising candidate for fault-tolerant quantum information processing. Extensive efforts have always been taken to completely shield these circuits from external magnetic fields to protect the integrity of the superconductivity. Here we show vortices can improve the performance of superconducting qubits by reducing the lifetimes of detrimental single-electron-like excitations known as quasiparticles. Using a contactless injection technique with unprecedented dynamic range, we quantitatively distinguish between recombination and trapping mechanisms in controlling the dynamics of residual quasiparticle, and show quantized changes in quasiparticle trapping rate because of individual vortices. These results highlight the prominent role of quasiparticle trapping in future development of superconducting qubits, and provide a powerful characterization tool along the way.

  17. Direct observation of single-charge-detection capability of nanowire field-effect transistors.

    Science.gov (United States)

    Salfi, J; Savelyev, I G; Blumin, M; Nair, S V; Ruda, H E

    2010-10-01

    A single localized charge can quench the luminescence of a semiconductor nanowire, but relatively little is known about the effect of single charges on the conductance of the nanowire. In one-dimensional nanostructures embedded in a material with a low dielectric permittivity, the Coulomb interaction and excitonic binding energy are much larger than the corresponding values when embedded in a material with the same dielectric permittivity. The stronger Coulomb interaction is also predicted to limit the carrier mobility in nanowires. Here, we experimentally isolate and study the effect of individual localized electrons on carrier transport in InAs nanowire field-effect transistors, and extract the equivalent charge sensitivity. In the low carrier density regime, the electrostatic potential produced by one electron can create an insulating weak link in an otherwise conducting nanowire field-effect transistor, modulating its conductance by as much as 4,200% at 31 K. The equivalent charge sensitivity, 4 × 10(-5) e Hz(-1/2) at 25 K and 6 × 10(-5) e Hz(-1/2) at 198 K, is orders of magnitude better than conventional field-effect transistors and nanoelectromechanical systems, and is just a factor of 20-30 away from the record sensitivity for state-of-the-art single-electron transistors operating below 4 K (ref. 8). This work demonstrates the feasibility of nanowire-based single-electron memories and illustrates a physical process of potential relevance for high performance chemical sensors. The charge-state-detection capability we demonstrate also makes the nanowire field-effect transistor a promising host system for impurities (which may be introduced intentionally or unintentionally) with potentially long spin lifetimes, because such transistors offer more sensitive spin-to-charge conversion readout than schemes based on conventional field-effect transistors.

  18. Superconducting materials

    International Nuclear Information System (INIS)

    Ruvalds, J.

    1990-01-01

    This report discusses the following topics: Fermi liquid nesting in high temperature superconductors; optical properties of high temperature superconductors; Hall effect in superconducting La 2-x Sr x CuO 4 ; source of high transition temperatures; and prospects for new superconductors

  19. Superconducting transformer

    International Nuclear Information System (INIS)

    Murphy, J.H.

    1982-01-01

    A superconducting transformer having a winding arrangement that provides for current limitation when subjected to a current transient as well as more efficient utilization of radial spacing and winding insulation. Structural innovations disclosed include compressed conical shaped winding layers and a resistive matrix to promote rapid switching of current between parallel windings

  20. Superconducting magnets

    International Nuclear Information System (INIS)

    1994-08-01

    This report discusses the following topics on superconducting magnets: D19B and -C: The next steps for a record-setting magnet; D20: The push beyond 10 T: Beyond D20: Speculations on the 16-T regime; other advanced magnets for accelerators; spinoff applications; APC materials development; cable and cabling-machine development; and high-T c superconductor at low temperature

  1. Superconducting magnets

    International Nuclear Information System (INIS)

    Willen, E.

    1996-01-01

    Superconducting dipole magnets for high energy colliders are discussed. As an example, the magnets recently built for the Relativistic Heavy Ion Collider at Brookhaven are reviewed. Their technical performance and the cost for the industry-built production dipoles are given. The cost data is generalized in order to extrapolate the cost of magnets for a new machine

  2. Bipolar superconductivity

    International Nuclear Information System (INIS)

    Pankratov, S.G.

    1987-01-01

    A model of bipolaron superconductivity suggested by Soviet scientist Alexandrov A.S. and French scientist Ranninger is presentes in a popular way. It is noted that the bipolaron theory gives a good explanation of certain properties of new superconductors, high critical temperature, in particular

  3. Differential cross sections for single-electron capture in He{sup 2+}-D collisions

    Energy Technology Data Exchange (ETDEWEB)

    Bordenave-Montesquieu, D.; Dagnac, R. [Centre National de la Recherche Scientifique (CNRS), 31 - Toulouse (France)]|[Toulouse-3 Univ., 31 (France)

    1995-06-14

    A translational energy spectroscopy technique was used to study single-electron capture into the He{sup +} (n = 2) and He{sup +} (n 3) states in He{sup 2+}-D collisions. Differential cross sections were determined at 4, 6 and 8 keV in the angular range 5`-1{sup o}30` (laboratory frame). As expected, single-electron capture into the n = 2 state was found to be the dominant process; total cross sections for capture into the He{sup +} (n = 3) state were compared to other experimental and theoretical results. (author).

  4. Theory of superconductivity

    International Nuclear Information System (INIS)

    Crisan, M.

    1988-01-01

    This book discusses the most important aspects of the theory. The phenomenological model is followed by the microscopic theory of superconductivity, in which modern formalism of the many-body theory is used to treat most important problems such as superconducting alloys, coexistence of superconductivity with the magnetic order, and superconductivity in quasi-one-dimensional systems. It concludes with a discussion on models for exotic and high temperature superconductivity. Its main aim is to review, as complete as possible, the theory of superconductivity from classical models and methods up to the 1987 results on high temperature superconductivity. Contents: Phenomenological Theory of Superconductivity; Microscopic Theory of Superconductivity; Theory of Superconducting Alloys; Superconductors in a Magnetic Field; Superconductivity and Magnetic Order; Superconductivity in Quasi-One-Dimensional Systems; and Non-Conventional Superconductivity

  5. Evolution of the MOS transistor - From conception to VLSI

    International Nuclear Information System (INIS)

    Sah, C.T.

    1988-01-01

    Historical developments of the metal-oxide-semiconductor field-effect-transistor (MOSFET) during the last sixty years are reviewed, from the 1928 patent disclosures of the field-effect conductivity modulation concept and the semiconductor triodes structures proposed by Lilienfeld to the 1947 Shockley-originated efforts which led to the laboratory demonstration of the modern silicon MOSFET thirty years later in 1960. A survey is then made of the milestones of the past thirty years leading to the latest submicron silicon logic CMOS (Complementary MOS) and BICMOS (Bipolar-Junction-Transistor CMOS combined) arrays and the three-dimensional and ferroelectric extensions of Dennard's one-transistor dynamic random access memory (DRAM) cell. Status of the submicron lithographic technologies (deep ultra-violet light, X-ray, electron-beam) are summarized. Future trends of memory cell density and logic gate speed are projected. Comparisons of the switching speed of the silicon MOSFET with that of silicon bipolar and GaAs field-effect transistors are reviewed. Use of high-temperature superconducting wires and GaAs-on-Si monolithic semiconductor optical clocks to break the interconnect-wiring delay barrier is discussed. Further needs in basic research and mathematical modeling on the failure mechanisms in submicron silicon transistors at high electric fields (hot electron effects) and in interconnection conductors at high current densities and low as well as high electric fields (electromigration) are indicated

  6. Single-electron transfer living radical copolymerization of SWCNT-g-PMMA via graft from approach

    Czech Academy of Sciences Publication Activity Database

    Jaisankar, S. N.; Haridharan, N.; Murali, A.; Ponyrko, Sergii; Špírková, Milena; Mandal, A. B.; Matějka, Libor

    2014-01-01

    Roč. 55, č. 13 (2014), s. 2959-2966 ISSN 0032-3861 R&D Projects: GA ČR GAP108/12/1459 Institutional support: RVO:61389013 Keywords : single electron transfer * single-walled carbon nanotubes * controlled radical polymerization Subject RIV: CD - Macromolecular Chemistry Impact factor: 3.562, year: 2014

  7. Single-electron capture in keV Ar15+...18++He collisions

    NARCIS (Netherlands)

    Knoop, S.; Fischer, D.; Xue, Y.; Zapukhlyak, M.; Osborne, C. J.; Ergler, Th; Ferger, T.; Braun, J.; Brenner, G.; Bruhns, H.; Dimopoulou, C.; Epp, S. W.; Martinez, A. J. Gonzalez; Sikler, G.; Orts, R. Soria; Tawara, H.; Kirchner, T.; Lopez-Urrutia, J. R. Crespo; Moshammer, R.; Ullrich, J.; Hoekstra, R.; Gonzales Martinez, A.J.

    2008-01-01

    Single-electron capture in 14 keV q(-1) Ar15+...18++He collisions is investigated both experimentally and theoretically. Partial cross sections and projectile scattering angle dependencies have been deduced from the target ion recoil momenta measured by the COLTRIMS technique. The comparison with

  8. Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

    Science.gov (United States)

    Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

    2008-11-01

    Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

  9. Nonadiabaticity and single-electron transport driven by surface acoustic waves

    DEFF Research Database (Denmark)

    Flensberg, Karsten; Niu, Q.; Pustilnik, M.

    1999-01-01

    Single-electron transport driven by surface acoustic waves (SAW) through a narrow constriction, formed in a two-dimensional electron gas, is studied theoretically. Due to long-range Coulomb interaction, the tunneling coupling between the electron gas and the moving minimum of the SAW...

  10. Different quantization mechanisms in single-electron pumps driven by surface acoustic waves

    DEFF Research Database (Denmark)

    Utko, P.; Gloos, K.; Hansen, Jørn Bindslev

    2006-01-01

    We have studied the acoustoelectric current in single-electron pumps driven by surface acoustic waves. We have found that in certain parameter ranges two different sets of quantized steps dominate the acoustoelectric current versus gate-voltage characteristics. In some cases, both types of quanti...

  11. Observation and applications of single-electron charge signals in the XENON100 experiment

    NARCIS (Netherlands)

    Aprile, E.; et al., [Unknown; Alfonsi, M.; Colijn, A.P.; Decowski, M.P.

    2014-01-01

    The XENON100 dark matter experiment uses liquid xenon in a time projection chamber (TPC) to measure xenon nuclear recoils resulting from the scattering of dark matter weakly interacting massive particles (WIMPs). In this paper, we report the observation of single-electron charge signals which are

  12. Color superconductivity

    International Nuclear Information System (INIS)

    Wilczek, F.

    1997-01-01

    The asymptotic freedom of QCD suggests that at high density - where one forms a Fermi surface at very high momenta - weak coupling methods apply. These methods suggest that chiral symmetry is restored and that an instability toward color triplet condensation (color superconductivity) sets in. Here I attempt, using variational methods, to estimate these effects more precisely. Highlights include demonstration of a negative pressure in the uniform density chiral broken phase for any non-zero condensation, which we take as evidence for the philosophy of the MIT bag model; and demonstration that the color gap is substantial - several tens of MeV - even at modest densities. Since the superconductivity is in a pseudoscalar channel, parity is spontaneously broken

  13. Color superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Wilczek, F. [Institute for Advanced Study, Princeton, NJ (United States)

    1997-09-22

    The asymptotic freedom of QCD suggests that at high density - where one forms a Fermi surface at very high momenta - weak coupling methods apply. These methods suggest that chiral symmetry is restored and that an instability toward color triplet condensation (color superconductivity) sets in. Here I attempt, using variational methods, to estimate these effects more precisely. Highlights include demonstration of a negative pressure in the uniform density chiral broken phase for any non-zero condensation, which we take as evidence for the philosophy of the MIT bag model; and demonstration that the color gap is substantial - several tens of MeV - even at modest densities. Since the superconductivity is in a pseudoscalar channel, parity is spontaneously broken.

  14. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  15. Superconducting magnet

    Science.gov (United States)

    1985-01-01

    Extensive computer based engineering design effort resulted in optimization of a superconducting magnet design with an average bulk current density of approximately 12KA/cm(2). Twisted, stranded 0.0045 inch diameter NbTi superconductor in a copper matrix was selected. Winding the coil from this bundle facilitated uniform winding of the small diameter wire. Test coils were wound using a first lot of the wire. The actual packing density was measured from these. Interwinding voltage break down tests on the test coils indicated the need for adjustment of the wire insulation on the lot of wire subsequently ordered for construction of the delivered superconducting magnet. Using the actual packing densities from the test coils, a final magnet design, with the required enhancement and field profile, was generated. All mechanical and thermal design parameters were then also fixed. The superconducting magnet was then fabricated and tested. The first test was made with the magnet immersed in liquid helium at 4.2K. The second test was conducted at 2K in vacuum. In the latter test, the magnet was conduction cooled from the mounting flange end.

  16. Melt formed superconducting joint between superconducting tapes

    International Nuclear Information System (INIS)

    Benz, M.G.; Knudsen, B.A.; Rumaner, L.E.; Zaabala, R.J.

    1992-01-01

    This patent describes a superconducting joint between contiguous superconducting tapes having an inner laminate comprised of a parent-metal layer selected from the group niobium, tantalum, technetium, and vanadium, a superconductive intermetallic compound layer on the parent-metal layer, a reactive-metal layer that is capable of combining with the parent-metal and forming the superconductive intermetallic compound, the joint comprising: a continuous precipitate of the superconductive intermetallic compound fused to the tapes forming a continuous superconducting path between the tapes

  17. Electron irradiation of power transistors

    International Nuclear Information System (INIS)

    Hower, P.L.; Fiedor, R.J.

    1982-01-01

    A method for reducing storage time and gain parameters in a semiconductor transistor includes the step of subjecting the transistor to electron irradiation of a dosage determined from measurements of the parameters of a test batch of transistors. Reduction of carrier lifetime by proton bombardment and gold doping is mentioned as an alternative to electron irradiation. (author)

  18. Superconducting flux flow digital circuits

    International Nuclear Information System (INIS)

    Martens, J.S.; Zipperian, T.E.; Hietala, V.M.; Ginley, D.S.; Tigges, C.P.; Phillips, J.M.; Siegal, M.P.

    1993-01-01

    The authors have developed a family of digital logic circuits based on superconducting flux flow transistors that show high speed, reasonable signal levels, large fan-out, and large noise margins. The circuits are made from high-temperature superconductors (HTS) and have been shown to operate at over 90 K. NOR gates have been demonstrated with fan-outs of more than 5 and fully loaded switching times less than a fixture-limited 50 ps. Ring-oscillator data suggest inverter delay times of about 40ps when using a 3-μm linewidths. Simple flip-flops have also been demonstrated showing large noise margins, response times of less than 30 ps, and static power dissipation on the order of 30 nW. Among other uses, this logic family is appropriate as an interface between logic families such as single flux quantum and conventional semiconductor logic

  19. Investigation of the epitaxial growth of Pb(Zr{sub 0,52}Ti{sub 0,48})O{sub 3} thin films and their application in ferroelectric superconducting field effect transistors; Untersuchung des epitaktischen Wachstums duenner Pb(Zr{sub 0,52}Ti{sub 0,48})O{sub 3}-Schichten und ihre Anwendung in ferroelektrischen supraleitenden Feldeffektransistoren

    Energy Technology Data Exchange (ETDEWEB)

    Aidam, R

    1999-02-01

    The influences of the polarization of ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) films on the properties of YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) films were investigated in ferroelectric superconducting field effect transistors (FSuFETs). First the epitaxial growth of PZT films deposited by reactive sputtering in an argon/oxygen atmosphere was investigated. SrTiO{sub 3} single crystals and YBCO thin films proved as suitable substrates. The lead content of the PZT films depended sensitively on the deposition temperature T{sub s} and the gas pressure. By using a high pressure of 0.26 mbar the correct stoichiometry could be achieved up to an maximum T{sub s} of 580 C. Above a minimum T{sub s} of 540 C the ferroelectric perovskite structure grew. In the optimum temperature range between 560 C and 580 C the films grew with a minimum mosaic spread of {delta}{omega} < 0.3 and a small amount of less than 1% of paraelectric phase. The best ferroelectric properties could be obtained for films with the highest degree of epitaxy and the correct stoichiometry. The maximum remanent polarization amounted P{sub r} = 61 {mu}C/cm{sup 2} and the coercive field E{sub C} was 150 kV/cm at 77 K. The breakdown field was four to five times larger than E{sub C}. Fatigue studies revealed a loss of switchable polarization of 30% after 10{sup 8} cycles at 77 K, whereas loss of retention and the effect of ageing were negligible. During the process of oxidation of the heterostructure at 400 C and an oxygen pressure of 800 mbar a reaction at the PZT/YBCO interface was observed, which lead to a degradation of the transport properties of the superconductor. This reaction could be avoided by a thin SrTiO{sub 3} buffer layer without disturbing the ferroelectric hysteresis essentially.

  20. Superconducting plasmas

    International Nuclear Information System (INIS)

    Ohnuma, Toshiro; Ohno, J.

    1994-01-01

    Superconducting (SC) plasmas are proposed and investigated. The SC plasmas are not yet familiar and have not yet been studied. However, the existence and the importance of SC plasmas are stressed in this report. The existence of SC plasmas are found as follows. There is a fundamental property of Meissner effect in superconductors, which shows a repulsive effect of magnetic fields. Even in that case, in a microscopic view, there is a region of magnetic penetration. The penetration length λ is well-known as London's penetration depth, which is expressed as δ = (m s /μ 0 n s q s 2 ) 1/2 where m s , n s , q s and μ o show the mass, the density, the charge of SC electron and the permeability in free space, respectively. Because this expression is very simple, no one had tried it into more simple and meaningful form. Recently, one of the authors (T.O.) has found that the length can be expressed into more simple and understandable fundamental form as λ = c/ω ps where c = (ε 0 μ 0 ) -1/2 and ω ps = (n s q s 2 /m s ε 0 ) 1/2 are the light velocity and the superconducting plasma frequency. From this simple expression, the penetration depth of the magnetic field to SC is found as a SC plasma skin depth, that is, the fundamental property of SC can be expressed by the SC plasmas. This discovery indicates an importance of the studies of superconducting plasmas. From these points, several properties (propagating modes et al) of SC plasmas, which consist of SC electrons, normal electrons and lattice ions, are investigated in this report. Observations of SC plasma frequency is also reported with a use of Terahertz electromagnet-optical waves

  1. Accelerating the life of transistors

    International Nuclear Information System (INIS)

    Qi Haochun; Lü Changzhi; Zhang Xiaoling; Xie Xuesong

    2013-01-01

    Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object, the test of accelerating life is conducted in constant temperature and humidity, and then the data are statistically analyzed with software developed by ourselves. According to degradations of such sensitive parameters as the reverse leakage current of transistors, the lifetime order of transistors is about more than 10 4 at 100 °C and 100% relative humidity (RH) conditions. By corrosion fracture of transistor outer leads and other failure modes, with the failure truncated testing, the average lifetime rank of transistors in different distributions is extrapolated about 10 3 . Failure mechanism analyses of degradation of electrical parameters, outer lead fracture and other reasons that affect transistor lifetime are conducted. The findings show that the impact of external stress of outer leads on transistor reliability is more serious than that of parameter degradation. (semiconductor devices)

  2. Direct single electron detection with a CMOS detector for electron microscopy

    International Nuclear Information System (INIS)

    Faruqi, A.R.; Henderson, R.; Pryddetch, M.; Allport, P.; Evans, A.

    2005-01-01

    We report the results of an investigation into the use of a monolithic active pixel sensor (MAPS) for electron microscopy. MAPS, designed originally for astronomers at the Rutherford Appleton Laboratories, was installed in a 120 kV electron microscope (Philips CM12) at the MRC Laboratory in Cambridge for tests which included recording single electrons at 40 and 120 keV, and measuring signal-to-noise ratio (SNR), spatial resolution and radiation sensitivity. Our results show that, due to the excellent SNR and resolution, it is possible to register single electrons. The radiation damage to the detector is apparent with low doses and gets progressively greater so that its lifetime is limited to 600,000-900,000 electrons/pixel (very approximately 10-15 krad). Provided this detector can be radiation hardened to reduce its radiation sensitivity several hundred fold and increased in size, it will provide excellent performance for all types of electron microscopy

  3. Tracing Single Electrons in a Disordered Polymer Film at Room Temperature.

    Science.gov (United States)

    Wilma, Kevin; Issac, Abey; Chen, Zhijian; Würthner, Frank; Hildner, Richard; Köhler, Jürgen

    2016-04-21

    The transport of charges lies at the heart of essentially all modern (opto-) electronic devices. Although inorganic semiconductors built the basis for current technologies, organic materials have become increasingly important in recent years. However, organic matter is often highly disordered, which directly impacts the charge carrier dynamics. To understand and optimize device performance, detailed knowledge of the transport mechanisms of charge carriers in disordered matter is therefore of crucial importance. Here we report on the observation of the motion of single electrons within a disordered polymer film at room temperature, using single organic chromophores as probe molecules. The migration of a single electron gives rise to a varying electric field in its vicinity, which is registered via a shift of the emission spectra (Stark shift) of a chromophore. The spectral shifts allow us to determine the electron mobility and reveal for each nanoenvironment a distinct number of different possible electron-transfer pathways within the rugged energy landscape of the disordered polymer matrix.

  4. The effects of two counterpropagating surface acoustic wave beams on single electron acoustic charge transport

    International Nuclear Information System (INIS)

    He Jianhong; Guo Huazhong; Song Li; Zhang Wei; Gao Jie; Lu Chuan

    2010-01-01

    We present a comprehensive study of the effects of two counterpropagating surface acoustic waves on the acoustoelectric current of single electron transport devices. A significant improvement in the accuracy of current quantization is achieved as a result of an additional surface acoustic wave beam. The experiments reveal the sinusoidally periodical modulation in the acoustoelectric current characteristic as a function of the relative phase of the two surface acoustic wave beams. Besides, by using standing surface acoustic waves, the acoustoelectric current is detected which we consider as the so-called anomalous acoustoelectric current produced by acoustic wave mechanical deformations. This kind current is contributed to one component of the acoustoelectric current in surface acoustic wave device, which could enable us to establish a more adequate description of acoustoelectric effects on single-electron acoustic charge transport.

  5. Development of CRID [Cerenkov Ring Imaging Detector] single electron wire detector

    International Nuclear Information System (INIS)

    Aston, D.; Bean, A.; Bienz, T.

    1989-02-01

    We describe the R and D effort to define the design parameters, method of construction and experimental results from the single electron wire detectors. These detectors will be used for particle identification using the Cerenkov Ring Imaging techniques in the SLD experiment at SLAC. We present measurements of pulse heights for several gases as a function of gas gain, charge division performance on a single electron signal using both 7 μm and 33 μm diameter carbon wires, photon feedback in TMAE laden gas, average pulse shape, and its comparison with the predicted shape and cross-talk. In addition, we present results of wire aging tests, and other tests associated with construction of this unusual type of wire chamber. 12 refs., 9 figs

  6. EPR and DNP Properties of Certain Novel Single Electron Contrast Agents Intended for Oximetric Imaging

    DEFF Research Database (Denmark)

    Ardenkjær-Larsen, J. H.; Laursen, I; Leunbach, I.

    1998-01-01

    Parameters of relevance to oximetry with Overhauser magnetic resonance imaging (OMRI) have been measured for three single electron contrast agents of the triphenylmethyl type. The single electron contrast agents are stable and water soluble. Magnetic resonance properties of the agents have been...... examined with electron paramagnetic resonance (EPR), nuclear magnetic resonance (NMR), and dynamic nuclear polarization (DNP) at 9.5 mT in water, isotonic saline, plasma, and blood at 23 and 37°C. The relaxivities of the agents are about 0.2–0.4 mM−1s−1and the DNP enhancements extrapolate close...... to the dipolar limit. The agents have a single, narrow EPR line, which is analyzed as a Voigt function. The linewidth is measured as a function of the agent concentration and the oxygen concentration. The concentration broadenings are about 1–3 μT/mM and the Lorentzian linewidths at infinite dilution are less...

  7. Scintillation of lead tungstate crystal studied with single-electron beam from KUFEL

    Energy Technology Data Exchange (ETDEWEB)

    Rizwan, Mohamad, E-mail: rizwan@nucl.kyushu-u.ac.jp; Uozumi, Yusuke; Matsuo, Kazuki [Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka (Japan); Ohgaki, Hideaki; Kii, Toshiteru; Zen, Heishun [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto (Japan); Tsamalaidze, Zviadi; Evtoukhovitch, Petr; Valentin, Samoilov [Joint Institute for Nuclear Research, JINR, Joliot-Curie Str.6, Dubna (Russian Federation)

    2015-04-29

    Lead tungstate (PWO) crystal has a very fast response, high atomic density and high radiation hardness. Therefore, they are suitable to be used for high-energy nuclear data measurements under high-background circumstances. Although a good electron-ion separation with a pulse shape analysis technique is essential, scintillation pulse shapes have not been observed with electron beams of a wide energy range. A single-electron beam technique has been developed at Kyoto University Free Electron Laser (KUFEL), and electron beams of 4-38 MeV are available. During the experiments, single electron beams bombarded a PWO crystal. By using oscilloscope we observed scintillation pulses of a PWO crystal coupled with a photomultiplier tube. Measured spectra were compared with the simulation code of EGS5 to analyze scattering effects. As the result, the pulse amplitudes show good linearity and the pulse shapes are almost constant in the observed energy range.

  8. Electron correlations in single-electron capture from helium by fast protons and α particles

    International Nuclear Information System (INIS)

    Mancev, Ivan; Milojevic, Nenad

    2010-01-01

    Single-electron capture from heliumlike atomic systems by bare projectiles is investigated by means of the four-body boundary-corrected first Born approximation (CB1-4B). The effect of the dynamic electron correlation is explicitly taken into account through the complete perturbation potential. The quantum-mechanical post and prior transition amplitudes for single charge exchange encompassing symmetric and/or asymmetric collisions are derived in terms of two-dimensional real integrals in the case of the prior form and five-dimensional quadratures for the post form. An illustrative computation is performed for single-electron capture from helium by protons and α particles at intermediate and high impact energies. The role of dynamic correlations is examined as a function of increased projectile energy. The validity and utility of the proposed CB1-4B method is critically assessed in comparison with the existing experimental data for total cross sections, and excellent agreement is obtained.

  9. Strong-coupling behaviour of two t - J chains with interchain single-electron hopping

    International Nuclear Information System (INIS)

    Zhang Guangming; Feng Shiping; Yu Lu.

    1994-01-01

    Using the fermion-spin transformation to implement spin-charge separation of constrained electrons, a model of two t - J chains with interchain single-electron hopping is studied by abelian bosonization. After spin-charge decoupling the charge dynamics can be trivially solved, while the spin dynamics is determined by a strong-coupling fixed point where the correlation functions can be calculated explicitly. This is a generalization of the Luther-Emery line for two-coupled t - J chains. The interchain single-electron hopping changes the asymptotic behaviour of the interchain spin-spin correlation functions and the electron Green function, but their exponents are independent of the coupling strength. (author). 25 refs

  10. Experimental investigations of single-electron detachment processes from H- ions colliding with MeV/u, highly charged ions

    International Nuclear Information System (INIS)

    Tawara, H.; Tonuma, T.; Kumagai, H.; Imai, T.; Uskov, D.B.; Presnyakov, L.P.

    1999-01-01

    Single electron detachment processes from negative hydrogen ions under collisions with MeV/u highly charged ions have been investigated using the so-called crossed-beams technique. The preliminary results of the single-electron detachment cross sections obtained is found to be in crude agreement with some empirical and theoretical estimations. (orig.)

  11. Vertical organic transistors

    International Nuclear Information System (INIS)

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-01-01

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted. (topical review)

  12. Photosensitive graphene transistors.

    Science.gov (United States)

    Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

    2014-08-20

    High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. The state of superconductivity

    International Nuclear Information System (INIS)

    Clark, T.D.

    1981-01-01

    The present status of applications based on the phenomena of superconductivity are reviewed. Superconducting materials, large scale applications, the Josephson effect and its applications, and superconductivity in instrumentation, are considered. The influence that superconductivity has had on modern theories of elementary particles, such as gauge symmetry breaking, is discussed. (U.K.)

  14. Power applications for superconducting cables in Denmark

    DEFF Research Database (Denmark)

    Tønnesen, Ole; Østergaard, Jacob; Olsen, S. Krüger

    1999-01-01

    In Denmark a growing concern for environmental protection has lead to wishes that the open country is kept free of overhead lines as far as possible. New lines under 100 kV and existing 60/50 kV lines should be established as underground cables. Superconducting cables represent an interesting...... in cases such as transmission of energy into cities and through areas of special interest. The planned large groups of windmills in Denmark generating up to 2000 MVA or more both on dry land and off-shore will be an obvious case for the application of superconducting AC or DC cables. These opportunities...... can be combined with other new technologies such as HVDC light transmission using isolated gate bipolar transistors (IGBTs). The network needed in a system with a substantial wind power generation has to be very strong in order to handle energy fluctuations. Such a network will be possible...

  15. Induction shimming: A new shimming concept for superconductive undulators

    Directory of Open Access Journals (Sweden)

    D. Wollmann

    2008-10-01

    Full Text Available Undulators are the most advanced sources for the generation of synchrotron radiation. The photons generated by a single electron add up coherently along the electron trajectory. In order to do so, the oscillatory motion of the electron has to be in phase with the emitted photons along the whole undulator. Small magnetic errors can cause unwanted destructive interferences. In standard permanent magnet undulators, the magnetic errors are reduced by applying shimming techniques. Superconductive undulators have higher magnetic fields than permanent magnet undulators but shimming is more complex. In this paper it is shown that coupled superconductive loops installed along the surface of the superconductive undulator coil can significantly reduce the destructive effect of the field errors. This new idea might allow the building of undulators with a superior field quality.

  16. 100 years of superconductivity

    CERN Document Server

    Rogalla, Horst

    2011-01-01

    Even a hundred years after its discovery, superconductivity continues to bring us new surprises, from superconducting magnets used in MRI to quantum detectors in electronics. 100 Years of Superconductivity presents a comprehensive collection of topics on nearly all the subdisciplines of superconductivity. Tracing the historical developments in superconductivity, the book includes contributions from many pioneers who are responsible for important steps forward in the field.The text first discusses interesting stories of the discovery and gradual progress of theory and experimentation. Emphasizi

  17. High-temperature superconductivity

    International Nuclear Information System (INIS)

    Ginzburg, V.L.

    1987-07-01

    After a short account of the history of experimental studies on superconductivity, the microscopic theory of superconductivity, the calculation of the control temperature and its possible maximum value are presented. An explanation of the mechanism of superconductivity in recently discovered superconducting metal oxide ceramics and the perspectives for the realization of new high-temperature superconducting materials are discussed. 56 refs, 2 figs, 3 tabs

  18. Superconducting accelerator technology

    International Nuclear Information System (INIS)

    Grunder, H.A.; Hartline, B.K.

    1986-01-01

    Modern and future accelerators for high energy and nuclear physics rely increasingly on superconducting components to achieve the required magnetic fields and accelerating fields. This paper presents a practical overview of the phenomenon of superconductivity, and describes the design issues and solutions associated with superconducting magnets and superconducting rf acceleration structures. Further development and application of superconducting components promises increased accelerator performance at reduced electric power cost

  19. Mesoscopic photon heat transistor

    DEFF Research Database (Denmark)

    Ojanen, T.; Jauho, Antti-Pekka

    2008-01-01

    We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir-Wingreen-Landauer-typ......We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir......-Wingreen-Landauer-type of conductance formula, which gives the photonic heat current through an arbitrary circuit element coupled to two dissipative reservoirs at finite temperatures. As an illustration we present an exact solution for the case when the intermediate circuit can be described as an electromagnetic resonator. We discuss...

  20. Organic electrochemical transistors

    Science.gov (United States)

    Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Róisín M.; Berggren, Magnus; Malliaras, George G.

    2018-02-01

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  1. Organic electrochemical transistors

    KAUST Repository

    Rivnay, Jonathan

    2018-01-16

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  2. High field superconducting magnets

    Science.gov (United States)

    Hait, Thomas P. (Inventor); Shirron, Peter J. (Inventor)

    2011-01-01

    A superconducting magnet includes an insulating layer disposed about the surface of a mandrel; a superconducting wire wound in adjacent turns about the mandrel to form the superconducting magnet, wherein the superconducting wire is in thermal communication with the mandrel, and the superconducting magnet has a field-to-current ratio equal to or greater than 1.1 Tesla per Ampere; a thermally conductive potting material configured to fill interstices between the adjacent turns, wherein the thermally conductive potting material and the superconducting wire provide a path for dissipation of heat; and a voltage limiting device disposed across each end of the superconducting wire, wherein the voltage limiting device is configured to prevent a voltage excursion across the superconducting wire during quench of the superconducting magnet.

  3. Understanding and application of superconducting materials

    International Nuclear Information System (INIS)

    Moon, Byeong Mu; Lee, Chun Heung

    1997-02-01

    This book deals with superconducting materials, which contains from basic theory to application of superconducting materials. The contents of this book are mystery of superconducting materials, properties of superconducting materials, thermodynamics of superconducting materials, theoretical background of superconducting materials, tunnelling and quantum interference, classification and properties of superconducting materials, high temperature superconducting materials, production and analysis of superconducting materials and application of superconducting materials.

  4. Single-electron capture in He[sup 2+]-D[sub 2] collisions

    Energy Technology Data Exchange (ETDEWEB)

    Bordenave-Montesquieu, D.; Dagnac, R. (Toulouse-3 Univ., 31 (France))

    1994-02-14

    Doubly differential cross sections of single-electron capture were measured for He[sup 2+] impinging on a molecular deuterium target. The investigated collision energies are 4, 6 and 8 keV and the scattering angles range from 10' to 2[sup o]30' (laboratory frame). The exothermic capture leading to He[sup +] (1s) + D[sub 2][sup +*] was found to be the most important process at low energies and angles, whereas the endothermic channels leading to dissociative capture become the main processes at high scattering angles, i.e. at small impact parameters. (author).

  5. Single electron capture differential cross section in H+ + He collisions at intermediate and high collision energies

    International Nuclear Information System (INIS)

    Abufager, P N; Fainstein, P D; MartInez, A E; Rivarola, R D

    2005-01-01

    The generalized continuum distorted wave-eikonal initial state (CDW-EIS II) approximation is employed to study differential cross sections (DCS) for single electron capture in H + + He collisions at intermediate and high energies. Present results are compared with theoretical calculations obtained using the previous CDW-EIS formulation in order to show the importance of the description of the bound and continuum target states in the entrance and exit channels, respectively. Both DCS are also shown together with other theoretical results and with experimental data

  6. Single electron capture in ion-atom collisions involving multielectronic targets

    International Nuclear Information System (INIS)

    Abufager, P.N.; Martinez, A.E.; Rivarola, R.D.; Fainstein, P.D.

    2005-01-01

    The generalized continuum distorted wave-eikonal initial state (GCDW-EIS) approximation is employed to study single electron capture by impact of protons on Ne and Ar targets. We analyze the contributions to the total cross sections coming from the different target shells. Present results are compared with theoretical calculations obtained using the previous CDW-EIS formulation and to experimental data in order to show the importance of the description of the bound and continuum target states in the entry and exit channels, respectively

  7. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    Energy Technology Data Exchange (ETDEWEB)

    Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

    2016-05-23

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  8. Injection of a single electron from static to moving quantum dots.

    Science.gov (United States)

    Bertrand, Benoit; Hermelin, Sylvain; Mortemousque, Pierre-André; Takada, Shintaro; Yamamoto, Michihisa; Tarucha, Seigo; Ludwig, Arne; Wieck, Andreas D; Bäuerle, Christopher; Meunier, Tristan

    2016-05-27

    We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot. The moving quantum dots are created with surface acoustic waves (SAWs) in a long depleted channel. We demonstrate that the injection process is characterized by an activation law with a threshold that depends on the SAW amplitude and on the dot-channel potential gradient. By sufficiently increasing the SAW modulation amplitude, we can reach a regime where the transfer has unity probability and is potentially adiabatic. This study points to the relevant regime to use moving dots in quantum information protocols.

  9. Absolute single electron loss in collisions of Ar+ with various atoms

    Science.gov (United States)

    Reyes, P. G.; Martínez, H.; Castillo, F.

    2001-07-01

    Absolute differential and total cross sections for single electron loss were measured for Ar+ ions on various atoms in the energy range of 1.5 to 5.0 keV. The laboratory angular scan for the distributions ranged from -2.5 to 2.5 degrees. The measured differential cross sections have been integrated over the experimental angular range providing absolute total cross sections. The behavior of the total electron loss cross sections with the target atomic number, Zt, shows different dependences as the collision energy increases. In all cases it displays a saturation as Zt increases.

  10. Strong coupling of a single electron in silicon to a microwave photon

    Science.gov (United States)

    Mi, X.; Cady, J. V.; Zajac, D. M.; Deelman, P. W.; Petta, J. R.

    2017-01-01

    Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.

  11. Single electron attachment and stripping cross sections for relativistic heavy ions

    International Nuclear Information System (INIS)

    Crawford, H.J.

    1979-06-01

    The results of a Bevalac experiment to measure the single electron attachment and stripping cross sections for relativistic (0.5 1 , and fully stripped, N 0 , ion beams emerging from the targets. Separate counters measured the number of ions in each charge state. The ratios N 1 /N 0 for different target thicknesses were fit to a simple growth curve to yield electron attachment and stripping cross sections. The data are compared to relativistic extrapolations of available theories. Clear evidence for two separate attachment processes, radiative and non-radiative, is found. Data are compared to a recently improved formulation for the stripping cross sections

  12. Nonadiabatic Dynamics in Single-Electron Tunneling Devices with Time-Dependent Density-Functional Theory

    Science.gov (United States)

    Dittmann, Niklas; Splettstoesser, Janine; Helbig, Nicole

    2018-04-01

    We simulate the dynamics of a single-electron source, modeled as a quantum dot with on-site Coulomb interaction and tunnel coupling to an adjacent lead in time-dependent density-functional theory. Based on this system, we develop a time-nonlocal exchange-correlation potential by exploiting analogies with quantum-transport theory. The time nonlocality manifests itself in a dynamical potential step. We explicitly link the time evolution of the dynamical step to physical relaxation timescales of the electron dynamics. Finally, we discuss prospects for simulations of larger mesoscopic systems.

  13. Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

    International Nuclear Information System (INIS)

    Noguchi, Yutaka; Ueda, Rieko; Kubota, Tohru; Kamikado, Toshiya; Yokoyama, Shiyoshi; Nagase, Takashi

    2008-01-01

    We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H 2 BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes

  14. ac superconducting articles

    International Nuclear Information System (INIS)

    Meyerhoff, R.W.

    1977-01-01

    A noval ac superconducting cable is described. It consists of a composite structure having a superconducting surface along with a high thermally conductive material wherein the superconducting surface has the desired physical properties, geometrical shape and surface finish produced by the steps of depositing a superconducting layer upon a substrate having a predetermined surface finish and shape which conforms to that of the desired superconducting article, depositing a supporting layer of material on the superconducting layer and removing the substrate, the surface of the superconductor being a replica of the substrate surface

  15. A new structure for a superconducting field effect transistor

    International Nuclear Information System (INIS)

    Tyc, S.; Schuhl, A.

    1992-01-01

    In this paper a new structure is proposed and described which can solve the most severe drawbacks of current architectures for Josephson FETs. Its advantages are discussed, and several realizations are suggested

  16. A search for single electron production in e+e/sup/minus// annihilation at 29 GeV

    International Nuclear Information System (INIS)

    Steele, T.R.

    1988-10-01

    A recent search for single electron events performed with the ASP detector at PEP is presented. No anomalous signal is observed and limits on masses of the supersymmetric partners of the electron and photon are obtained. 7 refs., 1 fig

  17. Nano-Electromechanical Systems: Displacement Detection and the Mechanical Single Electron Shuttle

    Science.gov (United States)

    Blick, R. H.; Beil, F. W.; Höhberger, E.; Erbe, A.; Weiss, C.

    For an introduction to nano-electromechanical systems we present measurements on nanomechanical resonators operating in the radio frequency range. We discuss in detail two different schemes of displacement detection for mechanical resonators, namely conventional reflection measurements of a probing signal and direct detection by capacitive coupling via a gate electrode. For capacitive detection we employ an on-chip preamplifier, which enables direct measurements of the resonator's disp lacement. We observe that the mechanical quality factor of the resonator depends on the detection technique applied, which is verified in model calculations and report on the detection of sub-harmonics. In the second part we extend our investigations to include transport of single electrons through an electron island on the tip of a nanomachined mechanical pendulum. The pendulum is operated by applying a modulating electromagnetic field in the range of 1 - 200 MHz, leading to mechanical oscillations between two laterally integrated source and drain contacts. Forming tunneling barriers the metallic tip shuttles single electrons from source to drain. The resulting tunneling current shows distinct features corresponding to the discrete mechanical eigenfrequencies of the pendulum. We report on measurements covering the temperature range from 300 K down to 4.2 K. The transport properties of the device are compared in detail to model calculations based on a Master-equation approach.

  18. Area efficient digital logic NOT gate using single electron box (SEB

    Directory of Open Access Journals (Sweden)

    Bahrepour Davoud

    2017-01-01

    Full Text Available The continuing scaling down of complementary metal oxide semiconductor (CMOS has led researchers to build new devices with nano dimensions, whose behavior will be interpreted based on quantum mechanics. Single-electron devices (SEDs are promising candidates for future VLSI applications, due to their ultra small dimensions and lower power consumption. In most SED based digital logic designs, a single gate is introduced and its performance discussed. While in the SED based circuits the fan out of designed gate circuit should be considered and measured. In the other words, cascaded SED based designs must work properly so that the next stage(s should be driven by the previous stage. In this paper, previously NOT gate based on single electron box (SEB which is an important structure in SED technology, is reviewed in order to obtain correct operation in series connections. The correct operation of the NOT gate is investigated in a buffer circuit which uses two connected NOT gate in series. Then, for achieving better performance the designed buffer circuit is improved by the use of scaling process.

  19. Repetitive readout of a single electronic spin via quantum logic with nuclear spin ancillae.

    Science.gov (United States)

    Jiang, L; Hodges, J S; Maze, J R; Maurer, P; Taylor, J M; Cory, D G; Hemmer, P R; Walsworth, R L; Yacoby, A; Zibrov, A S; Lukin, M D

    2009-10-09

    Robust measurement of single quantum bits plays a key role in the realization of quantum computation and communication as well as in quantum metrology and sensing. We have implemented a method for the improved readout of single electronic spin qubits in solid-state systems. The method makes use of quantum logic operations on a system consisting of a single electronic spin and several proximal nuclear spin ancillae in order to repetitively readout the state of the electronic spin. Using coherent manipulation of a single nitrogen vacancy center in room-temperature diamond, full quantum control of an electronic-nuclear system consisting of up to three spins was achieved. We took advantage of a single nuclear-spin memory in order to obtain a 10-fold enhancement in the signal amplitude of the electronic spin readout. We also present a two-level, concatenated procedure to improve the readout by use of a pair of nuclear spin ancillae, an important step toward the realization of robust quantum information processors using electronic- and nuclear-spin qubits. Our technique can be used to improve the sensitivity and speed of spin-based nanoscale diamond magnetometers.

  20. Electron Spin Resonance Experiments on a Single Electron in Silicon Implanted with Phosphorous

    Science.gov (United States)

    Luhman, Dwight R.; Nguyen, K.; Tracy, L. A.; Carr, S.; Borchardt, J.; Bishop, N.; Ten Eyck, G.; Pluym, T.; Wendt, J.; Lilly, M. P.; Carroll, M. S.

    2015-03-01

    In this talk we will discuss the results of our ongoing experiments involving electron spin resonance (ESR) on a single electron in a natural silicon sample. The sample consists of an SET, defined by lithographic polysilicon gates, coupled to nearby phosphorous donors. The SET is used to detect charge transitions and readout the spin of the electron being investigated with ESR. The measurements were done with the sample at dilution refrigerator temperatures in the presence of a 1.3 T magnetic field. We will present data demonstrating Rabi oscillations of a single electron in this system as well as measurements of the coherence time, T2. We will also discuss our results using these and various other pulsing schemes in the context of a donor-SET system. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  1. WORKSHOPS: Radiofrequency superconductivity

    International Nuclear Information System (INIS)

    Anon.

    1992-01-01

    In the continual push towards higher energy particle beams, superconducting radiofrequency techniques now play a vital role, highlighted in the fifth workshop on radiofrequency superconductivity, held at DESY from 19 - 24 August 1991

  2. WORKSHOPS: Radiofrequency superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1992-01-15

    In the continual push towards higher energy particle beams, superconducting radiofrequency techniques now play a vital role, highlighted in the fifth workshop on radiofrequency superconductivity, held at DESY from 19 - 24 August 1991.

  3. Dosimetric properties of MOS transistors

    International Nuclear Information System (INIS)

    Peter, I.; Frank, G.

    1977-01-01

    The performance of MOS transistors as gamma detectors has been tested. The dosimeter sensitivity has proved to be independent on the doses ranging from 10 3 to 10 6 R, and gamma energy of 137 Cs, 60 Co - sources and 5 - 18 MeV electrons. Fading of the space charge trapped by the SiO 2 layer of the transistor has appeared to be neglegible at room temperature after 400 hrs. The isochronous annealing in the temperature range of 40-260 deg C had a more substantial effect on the space charge of the transistor irradiated with 18 MeV electrons than on the 137 Cs gamma-irradiated transistors. This proved a repeated use of γ-dosemeters. MOS transistors are concluded to be promising for gamma dosimetry [ru

  4. Superconducting current in a bisoliton superconductivity model

    International Nuclear Information System (INIS)

    Ermakov, V.N.; Kruchinin, S.P.; Ponezha, E.A.

    1991-01-01

    It is shown that the transition into a superconducting state with the current which is described by a bisoliton superconductivity model is accompanied by the deformation of the spectrum of one-particle states of the current carriers. The deformation value is proportional to the conducting current force. The residuaby resistance in such state is absent

  5. Spin Hall effect transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, Joerg; Park, B.G.; Irvine, A.C.; Zarbo, Liviu; Rozkotová, E.; Němec, P.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

    2010-01-01

    Roč. 330, č. 6012 (2010), s. 1801-1804 ISSN 0036-8075 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : spin Hall effect * spintronics * spin transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 31.364, year: 2010

  6. Enhanced superconductivity of fullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Washington, II, Aaron L.; Teprovich, Joseph A.; Zidan, Ragaiy

    2017-06-20

    Methods for enhancing characteristics of superconductive fullerenes and devices incorporating the fullerenes are disclosed. Enhancements can include increase in the critical transition temperature at a constant magnetic field; the existence of a superconducting hysteresis over a changing magnetic field; a decrease in the stabilizing magnetic field required for the onset of superconductivity; and/or an increase in the stability of superconductivity over a large magnetic field. The enhancements can be brought about by transmitting electromagnetic radiation to the superconductive fullerene such that the electromagnetic radiation impinges on the fullerene with an energy that is greater than the band gap of the fullerene.

  7. Superconductivity in Medicine

    Science.gov (United States)

    Alonso, Jose R.; Antaya, Timothy A.

    2012-01-01

    Superconductivity is playing an increasingly important role in advanced medical technologies. Compact superconducting cyclotrons are emerging as powerful tools for external beam therapy with protons and carbon ions, and offer advantages of cost and size reduction in isotope production as well. Superconducting magnets in isocentric gantries reduce their size and weight to practical proportions. In diagnostic imaging, superconducting magnets have been crucial for the successful clinical implementation of magnetic resonance imaging. This article introduces each of those areas and describes the role which superconductivity is playing in them.

  8. Ultrafast electron microscopy: Instrument response from the single-electron to high bunch-charge regimes

    Science.gov (United States)

    Plemmons, Dayne A.; Flannigan, David J.

    2017-09-01

    We determine the instrument response of an ultrafast electron microscope equipped with a conventional thermionic electron gun and absent modifications beyond the optical ports. Using flat, graphite-encircled LaB6 cathodes, we image space-charge effects as a function of photoelectron-packet population and find that an applied Wehnelt bias has a negligible effect on the threshold levels (>103 electrons per pulse) but does appear to suppress blurring at the upper limits (∼105 electrons). Using plasma lensing, we determine the instrument-response time for 700-fs laser pulses and find that single-electron packets are laser limited (1 ps), while broadening occurs well below the space-charge limit.

  9. Single electron detachment of carbon group and oxygen group elements incident on helium

    International Nuclear Information System (INIS)

    Huang Yongyi; Li Guangwu; Gao Yinghui; Yang Enbo; Gao Mei; Lu Fuquan; Zhang Xuemei

    2006-01-01

    The absolute single electron detachment (SED) cross sections of carbon group elements C - , Si - , Ge - in the energy range of 0.05-0.29 a.u. (5 keV-30 keV) and oxygen group elements O - and S - 0.08-0.27 a.u. (5 keV-30 keV), incident on helium are measured with growth rate method. In our energy region, the SED cross sections of C - , Si - , S - and Ge - increase with the projectiles velocity, at the same time, O - cross sections reach a conspicuous maximum at 0.18 a.u. Some abnormal behavior occurs in measurement of SED cross sections for the oxygen group collision with helium. Our results have been compared with a previous work

  10. Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

    Science.gov (United States)

    Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

    2000-01-01

    We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

  11. Cp2 TiX Complexes for Sustainable Catalysis in Single-Electron Steps.

    Science.gov (United States)

    Richrath, Ruben B; Olyschläger, Theresa; Hildebrandt, Sven; Enny, Daniel G; Fianu, Godfred D; Flowers, Robert A; Gansäuer, Andreas

    2018-04-25

    We present a combined electrochemical, kinetic, and synthetic study with a novel and easily accessible class of titanocene catalysts for catalysis in single-electron steps. The tailoring of the electronic properties of our Cp 2 TiX-catalysts that are prepared in situ from readily available Cp 2 TiX 2 is achieved by varying the anionic ligand X. Of the complexes investigated, Cp 2 TiOMs proved to be either equal or substantially superior to the best catalysts developed earlier. The kinetic and thermodynamic properties pertinent to catalysis have been determined. They allow a mechanistic understanding of the subtle interplay of properties required for an efficient oxidative addition and reduction. Therefore, our study highlights that efficient catalysts do not require the elaborate covalent modification of the cyclopentadienyl ligands. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. A measure of localization properties of one-dimensional single electron lattice systems

    International Nuclear Information System (INIS)

    Gong, Longyan; Li, Wenjia; Zhao, Shengmei; Cheng, Weiwen

    2016-01-01

    We propose a novel quantity to measure the degree of localization properties of various types of one-dimension single electron states. The quantity includes information about the spatial variation of probability density of quantum states. Numerical results show that it can distinguish localized states from delocalized ones, so it can be used as a fruitful index to monitor the localization–delocalization transition. Comparing with existing measures, such as geometric average density of states, inverse participation ratio, and quantum information entropies, our proposed quantity has some advantages over them. - Highlights: • A novel quantity is proposed to measure the degree of localization. • It includes information about the spatial variation of probability density. • It is a fruitful index to monitor the localization–delocalization transition.

  13. Single-electron capture in low-energy Ar6+-He collisions

    International Nuclear Information System (INIS)

    Akguengoer, K.; Kamber, E.Y.; Ferguson, S.M.

    1997-01-01

    Double differential cross sections for state-selective single-electron capture processes in Ar 6+ -He collisions have been measured at laboratory energies between 75 and 900 eV and scattering angles between 0 and 8 . At the lowest energy, the zero-angle spectrum shows capture into Ar 5+ (4p) to be the most important channel. However, as the scattering angle is increased, a second peak appears at angles ≥2 and becomes more pronounced relative to the 4p capture channel. The energy spectra are interpreted qualitatively in terms of the reaction windows, which are calculated using the single-crossing Landau-Zener model. Total and differential cross sections are also measured and compared with available measurements and calculations. (orig.)

  14. Retrocausation acting in the single-electron double-slit interference experiment

    Science.gov (United States)

    Hokkyo, Noboru

    The single electron double-slit interference experiment is given a time-symmetric interpretation and visualization in terms of the intermediate amplitude of transition between the particle source and the detection point. It is seen that the retarded (causal) amplitude of the electron wave expanding from the source shows an advanced (retrocausal) bifurcation and merging in passing through the double-slit and converges towards the detection point as if guided by the advanced (retrocausal) wave from the detected electron. An experiment is proposed to confirm the causation-retrocausation symmetry of the electron behavior by observing the insensitivity of the interference pattern to non-magnetic obstacles placed in the shadows of the retarded and advanced waves appearing on the rear and front sides of the double-slit.

  15. Femtosecond single electron bunch generation by rotating longitudinal bunch phase space in magnetic field

    International Nuclear Information System (INIS)

    Yang, J.; Kondoh, T.; Kan, K.; Kozawa, T.; Yoshida, Y.; Tagawa, S.

    2006-01-01

    A femtosecond (fs) electron bunching was observed in a photoinjector with a magnetic compressor by rotating the bunch in longitudinal phase space. The bunch length was obtained by measuring Cherenkov radiation of the electron beam with a femtosecond streak camera technique. A single electron bunch with rms bunch length of 98 fs was observed for a 32 MeV electron beam at a charge of 0.17 nC. The relative energy spread and the normalized transverse emittance of the electron beam were 0.2% and 3.8 mm-mrad, respectively. The effect of space charge on the bunch compression was investigated experimentally for charges from 0.17 to 1.25 nC. The dependences of the relative energy spread and the normalized beam transverse emittance on the bunch charge were measured

  16. Analysis of photogenerated random telegraph signal in single electron detector (photo-SET).

    Science.gov (United States)

    Troudi, M; Sghaier, Na; Kalboussi, A; Souifi, A

    2010-01-04

    In this paper, we analyzed slow single traps, situated inside the tunnel oxide of small area single electron photo-detector (photo-SET or nanopixel). The relationship between excitation signal (photons) and random-telegraph-signal (RTS) was evidenced. We demonstrated that photoinduced RTS observed on a photo-detector is due to the interaction between single photogenerated charges that tunnel from dot to dot and current path. Based on RTS analysis for various temperatures, gate bias and optical power we determined the characteristics of these single photogenerated traps: the energy position within the silicon bandgap, capture cross section and the position within the Si/SiO(x = 1.5) interfaces.

  17. Detection of single electron spin resonance in a double quantum dota)

    Science.gov (United States)

    Koppens, F. H. L.; Buizert, C.; Vink, I. T.; Nowack, K. C.; Meunier, T.; Kouwenhoven, L. P.; Vandersypen, L. M. K.

    2007-04-01

    Spin-dependent transport measurements through a double quantum dot are a valuable tool for detecting both the coherent evolution of the spin state of a single electron, as well as the hybridization of two-electron spin states. In this article, we discuss a model that describes the transport cycle in this regime, including the effects of an oscillating magnetic field (causing electron spin resonance) and the effective nuclear fields on the spin states in the two dots. We numerically calculate the current flow due to the induced spin flips via electron spin resonance, and we study the detector efficiency for a range of parameters. The experimental data are compared with the model and we find a reasonable agreement.

  18. Femtosecond few- to single-electron point-projection microscopy for nanoscale dynamic imaging

    Directory of Open Access Journals (Sweden)

    A. R. Bainbridge

    2016-03-01

    Full Text Available Femtosecond electron microscopy produces real-space images of matter in a series of ultrafast snapshots. Pulses of electrons self-disperse under space-charge broadening, so without compression, the ideal operation mode is a single electron per pulse. Here, we demonstrate femtosecond single-electron point projection microscopy (fs-ePPM in a laser-pump fs-e-probe configuration. The electrons have an energy of only 150 eV and take tens of picoseconds to propagate to the object under study. Nonetheless, we achieve a temporal resolution with a standard deviation of 114 fs (equivalent to a full-width at half-maximum of 269 ± 40 fs combined with a spatial resolution of 100 nm, applied to a localized region of charge at the apex of a nanoscale metal tip induced by 30 fs 800 nm laser pulses at 50 kHz. These observations demonstrate real-space imaging of reversible processes, such as tracking charge distributions, is feasible whilst maintaining femtosecond resolution. Our findings could find application as a characterization method, which, depending on geometry, could resolve tens of femtoseconds and tens of nanometres. Dynamically imaging electric and magnetic fields and charge distributions on sub-micron length scales opens new avenues of ultrafast dynamics. Furthermore, through the use of active compression, such pulses are an ideal seed for few-femtosecond to attosecond imaging applications which will access sub-optical cycle processes in nanoplasmonics.

  19. A search for single electron production in electron positron annihilation at E = 29 GeV

    International Nuclear Information System (INIS)

    Steele, T.R.

    1989-09-01

    This thesis presents experimental results from the ASP detector which took data on e + e - interactions in the PEP storage ring at SLAC. Its design was particularly suitable for searching for production of supersymmetric particles. The motivations for and phenomenology of Supersymmetry are discussed. In particular, the production of a single supersymmetric electron (''selectron'', e) in combination with a supersymmetric photon (''photino'', γ) would result in events in which a single electron and no other particles are observed in the detector at an e + e - collider such as PEP, provided the masses of these particles are not too large. Such events would also result from the production of a single supersymmetric W-boson (''wino'', W) in combination with a supersymmetric neutrino (''sneutrino'', ν). These processes make it possible to search for electrons and winos with masses greater than the beam energy. Observation of these unusual events would distinctly indicate the production of new particles. The ASP detector was designed to be hermetic and to provide efficient event reconstruction for low multiplicity events. The detector is described and its performance is evaluated; it is found to be well-suited to this study. The data sample collected with the detector was thoroughly analyzed for evidence of single-electron events. The various possible background processes are considered and Monte Carlo calculations of the distributions from single selectron and single wino production are presented. Using this information an efficient off-line event selection process was developed, and it is described in detail. 82 refs., 41 figs., 4 tabs

  20. Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

    International Nuclear Information System (INIS)

    Lee, Youngmin; Lee, Sejoon; Im, Hyunsik; Hiramoto, Toshiro

    2015-01-01

    We demonstrate multiple logic-functions at room temperature on a unit device of the Si single electron transistor (SET). Owing to the formation of the multi-dot system, the device exhibits the enhanced Coulomb blockade characteristics (e.g., large peak-to-valley current ratio ∼200) that can improve the reliability of the SET-based logic circuits. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate or the drain voltage. This enables the SET to act as a multi-functional one-transistor logic gate with AND, OR, NAND, and XOR functions

  1. Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngmin; Lee, Sejoon, E-mail: sejoon@dongguk.edu; Im, Hyunsik [Department of Semiconductor Science, Dongguk University-Seoul, Seoul 100-715 (Korea, Republic of); Hiramoto, Toshiro [Institute of Industrial Science, University of Tokyo, Tokyo 153-8505 (Japan)

    2015-02-14

    We demonstrate multiple logic-functions at room temperature on a unit device of the Si single electron transistor (SET). Owing to the formation of the multi-dot system, the device exhibits the enhanced Coulomb blockade characteristics (e.g., large peak-to-valley current ratio ∼200) that can improve the reliability of the SET-based logic circuits. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate or the drain voltage. This enables the SET to act as a multi-functional one-transistor logic gate with AND, OR, NAND, and XOR functions.

  2. Superconductivity in transition metals.

    Science.gov (United States)

    Slocombe, Daniel R; Kuznetsov, Vladimir L; Grochala, Wojciech; Williams, Robert J P; Edwards, Peter P

    2015-03-13

    A qualitative account of the occurrence and magnitude of superconductivity in the transition metals is presented, with a primary emphasis on elements of the first row. Correlations of the important parameters of the Bardeen-Cooper-Schrieffer theory of superconductivity are highlighted with respect to the number of d-shell electrons per atom of the transition elements. The relation between the systematics of superconductivity in the transition metals and the periodic table high-lights the importance of short-range or chemical bonding on the remarkable natural phenomenon of superconductivity in the chemical elements. A relationship between superconductivity and lattice instability appears naturally as a balance and competition between localized covalent bonding and so-called broken covalency, which favours d-electron delocalization and superconductivity. In this manner, the systematics of superconductivity and various other physical properties of the transition elements are related and unified. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

  3. Physical limits of silicon transistors and circuits

    International Nuclear Information System (INIS)

    Keyes, Robert W

    2005-01-01

    A discussion on transistors and electronic computing including some history introduces semiconductor devices and the motivation for miniaturization of transistors. The changing physics of field-effect transistors and ways to mitigate the deterioration in performance caused by the changes follows. The limits of transistors are tied to the requirements of the chips that carry them and the difficulties of fabricating very small structures. Some concluding remarks about transistors and limits are presented

  4. Copper atomic-scale transistors.

    Science.gov (United States)

    Xie, Fangqing; Kavalenka, Maryna N; Röger, Moritz; Albrecht, Daniel; Hölscher, Hendrik; Leuthold, Jürgen; Schimmel, Thomas

    2017-01-01

    We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO 4 + H 2 SO 4 ) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and -170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes ( U bias ) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1 G 0 ( G 0 = 2e 2 /h; with e being the electron charge, and h being Planck's constant) or 2 G 0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

  5. Programmable automated transistor test system

    International Nuclear Information System (INIS)

    Truong, L.V.; Sundberg, G.R.

    1986-01-01

    The paper describes a programmable automated transistor test system (PATTS) and its utilization to evaluate bipolar transistors and Darlingtons, and such MOSFET and special types as can be accommodated with the PATTS base-drive. An application of a pulsed power technique at low duty cycles in a non-destructive test is used to examine the dynamic switching characteristic curves of power transistors. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software. In addition a library of test data is established on disks, tapes, and hard copies for future reference

  6. Transistor and integrated circuit manufacture

    International Nuclear Information System (INIS)

    Colman, D.

    1978-01-01

    This invention relates to the manufacture of transistors and integrated circuits by ion bombardment techniques and is particularly, but not exclusively, of value in the manufacture of so-called integrated injection logic circuitry. (author)

  7. High transconductance organic electrochemical transistors

    Science.gov (United States)

    Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

    2013-07-01

    The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications.

  8. Organic tunnel field effect transistors

    KAUST Repository

    Tietze, Max Lutz; Lussem, Bjorn; Liu, Shiyi

    2017-01-01

    Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer

  9. High transconductance organic electrochemical transistors

    Science.gov (United States)

    Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

    2013-01-01

    The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications. PMID:23851620

  10. Transistor and integrated circuit manufacture

    Energy Technology Data Exchange (ETDEWEB)

    Colman, D

    1978-09-27

    This invention relates to the manufacture of transistors and integrated circuits by ion bombardment techniques and is particularly, but not exclusively, of value in the manufacture of so-called integrated injection logic circuitry.

  11. Experimental study of single-electron loss by Ar{sup +} ions in rare-gas atoms

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, P.G. [Facultad de Ciencias, UNAM, Coyoacan (Mexico); Castillo, F. [Instituto de Ciencias Nucleares, UNAM, Coyoacan (Mexico); Martinez, H. [Centro de Ciencias Fisicas, UNAM, Cuernavaca, Morelos (Mexico)]. E-mail: hm@fis.unam.mx

    2001-04-28

    Absolute differential and total cross sections for single-electron loss were measured for Ar{sup +} ions on rare-gas atoms in the laboratory energy range of 1.5 to 5.0 keV. The electron loss cross sections for all the targets studied are found to be in the order of magnitude between 10{sup -19} and 10{sup -22} cm{sup 2}, and show a monotonically increasing behaviour as a function of the incident energy. The behaviour of the total single-electron loss cross sections with the atomic target number, Z{sub t}, shows different dependences as the collision energy increases. In all cases the present results display experimental evidence of saturation in the single-electron loss cross section as the atomic number of the target increases. (author)

  12. Dosimetric properties of MOS transistors

    International Nuclear Information System (INIS)

    Frank, H.; Petr, I.

    1977-01-01

    The structure of MOS transistors is described and their characteristics given. The experiments performed and data in the literature show the following dosimetric properties of MOS transistors: while for low gamma doses the transistor response to exposure is linear, it shows saturation for higher doses (exceeding 10 3 Gy in tissue). The response is independent of the energy of radiation and of the dose rate (within 10 -2 to 10 5 Gy/s). The spontaneous reduction with time of the spatial charge captured by the oxide layer (fading) is small and acceptable from the point of view of dosimetry. Curves are given of isochronous annealing of the transistors following irradiation with 137 Cs and 18 MeV electrons for different voltages during irradiation. The curves show that in MOS transistors irradiated with high-energy electrons the effect of annealing is less than in transistors irradiated with 137 Cs. In view of the requirement of using higher temperatures (approx. 400 degC) for the complete ''erasing'' of the captured charge, unsealed systems must be used for dosimetric purposes. The effect was also studied of neutron radiation, proton radiation and electron radiation on the MOS transistor structure. For MOS transistor irradiation with 14 MeV neutrons from a neutron generator the response was 4% of that for gamma radiation at the same dose equivalent. The effect of proton radiation was studied as related to the changes in MOS transistor structure during space flights. The response curve shapes are similar to those of gamma radiation curves. The effect of electron radiation on the MOS structure was studied by many authors. The experiments show that for each thickness of the SiO 2 layer an electron energy exists at which the size of the charge captured in SiO 2 is the greatest. All data show that MOS transistors are promising for radiation dosimetry. The main advantage of MOS transistors as gamma dosemeters is the ease and speed of evaluation, low sensitivity to neutron

  13. Planar-Processed Polymer Transistors.

    Science.gov (United States)

    Xu, Yong; Sun, Huabin; Shin, Eul-Yong; Lin, Yen-Fu; Li, Wenwu; Noh, Yong-Young

    2016-10-01

    Planar-processed polymer transistors are proposed where the effective charge injection and the split unipolar charge transport are all on the top surface of the polymer film, showing ideal device characteristics with unparalleled performance. This technique provides a great solution to the problem of fabrication limitations, the ambiguous operating principle, and the performance improvements in practical applications of conjugated-polymer transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Laser activated superconducting switch

    International Nuclear Information System (INIS)

    Wolf, A.A.

    1976-01-01

    A superconducting switch or bistable device is described consisting of a superconductor in a cryogen maintaining a temperature just below the transition temperature, having a window of the proper optical frequency band for passing a laser beam which may impinge on the superconductor when desired. The frequency of the laser is equal to or greater than the optical absorption frequency of the superconducting material and is consistent with the ratio of the gap energy of the switch material to Planck's constant, to cause depairing of electrons, and thereby normalize the superconductor. Some embodiments comprise first and second superconducting metals. Other embodiments feature the two superconducting metals separated by a thin film insulator through which the superconducting electrons tunnel during superconductivity

  15. CDW-EIS model for single-electron capture in ion-atom collisions involving multielectronic targets

    International Nuclear Information System (INIS)

    Abufager, P N; MartInez, A E; Rivarola, R D; Fainstein, P D

    2004-01-01

    A generalization of the continuum distorted wave eikonal initial state (CDW-EIS) approximation, for the description of single-electron capture in ion-atom collisions involving multielectronic targets is presented. This approximation is developed within the framework of the independent electron model taking particular care of the representation of the bound and continuum target states. Total cross sections for single-electron capture from the K-shell of He, Ne and Ar noble gases by impact of bare ions are calculated. Present results are compared to previous CDW-EIS ones and to experimental data

  16. Frontiers in Superconducting Materials

    CERN Document Server

    Narlikar, Anant V

    2005-01-01

    Frontiers in Superconducting Materials gives a state-of-the-art report of the most important topics of the current research in superconductive materials and related phenomena. It comprises 30 chapters written by renowned international experts in the field. It is of central interest to researchers and specialists in Physics and Materials Science, both in academic and industrial research, as well as advanced students. It also addresses electronic and electrical engineers. Even non-specialists interested in superconductivity might find some useful answers.

  17. Superconductivity and their applications

    OpenAIRE

    Roque, António; Sousa, Duarte M.; Fernão Pires, Vítor; Margato, Elmano

    2017-01-01

    Trabalho apresentado em International Conference on Renewable Energies and Power Quality (ICREPQ’17), 4 a 6 de Abril de 2017, Málaga, Espanha The research in the field of superconductivity has led to the synthesis of superconducting materials with features that allow you to expand the applicability of this kind of materials. Among the superconducting materials characteristics, the critical temperature of the superconductor is framing the range and type of industrial applications that can b...

  18. Superconducting machines. Chapter 4

    International Nuclear Information System (INIS)

    Appleton, A.D.

    1977-01-01

    A brief account is given of the principles of superconductivity and superconductors. The properties of Nb-Ti superconductors and the method of flux stabilization are described. The basic features of superconducting d.c. machines are illustrated by the use of these machines for ship propulsion, steel-mill drives, industrial drives, aluminium production, and other d.c. power supplies. Superconducting a.c. generators and their design parameters are discussed. (U.K.)

  19. Superconductivity in the actinides

    International Nuclear Information System (INIS)

    Smith, J.L.; Lawson, A.C.

    1985-01-01

    The trends in the occurrence of superconductivity in actinide materials are discussed. Most of them seem to show simple transition metal behavior. However, the superconductivity of americium proves that the f electrons are localized in that element and that ''actinides'' is the correct name for this row of elements. Recently the superconductivity of UBe 13 and UPt 3 has been shown to be extremely unusual, and these compounds fall in the new class of compounds now known as heavy fermion materials

  20. WORKSHOP: Radiofrequency superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    1984-10-15

    The Second Workshop on Radiofrequency Superconductivity was held at CERN from 23-27 July, four years after the first, organized at Karlsruhe. 35 invited talks were presented to the about 80 participants from Australia, Brazil, Europe, Japan and the United States. For the first time, ten Laboratories operating or planning superconducting accelerators for heavy ions participated and shared their experience with the community proposing the use of superconducting accelerating sections for electron accelerators.

  1. WORKSHOP: Radiofrequency superconductivity

    International Nuclear Information System (INIS)

    Anon.

    1984-01-01

    The Second Workshop on Radiofrequency Superconductivity was held at CERN from 23-27 July, four years after the first, organized at Karlsruhe. 35 invited talks were presented to the about 80 participants from Australia, Brazil, Europe, Japan and the United States. For the first time, ten Laboratories operating or planning superconducting accelerators for heavy ions participated and shared their experience with the community proposing the use of superconducting accelerating sections for electron accelerators

  2. Superconductivity in power engineering

    International Nuclear Information System (INIS)

    1989-01-01

    This proceedings volume presents 24 conference papers and 15 posters dealing with the following aspects: 1) Principles and elementary aspects of high-temperature superconductivity (3 plenary lectures); 2) Preparation, properties and materials requirements of metallic or oxide superconductors (critical current behaviour, soldered joints, structural studies); 3) Magnet technology (large magnets for thermonuclear fusion devices; magnets for particle accelerators and medical devices); 4) Magnetic levitation and superconductivity; 5) Cryogenics; 6) Energy storage systems using superconducting coils (SMES); 7) Superconducting power transmission cables, switches, transformers, and generator systems for power plant; 8) Supporting activities, industrial aspects, patents. There are thirty-eight records in the ENERGY database relating to individual conference papers. (MM) [de

  3. Superconductivity and its application

    International Nuclear Information System (INIS)

    Spadoni, M.

    1988-01-01

    This paper, after a short introduction to superconductivity and to multifilamentary superconducting composites is aiming to review the state of the art and the future perspective of some of the applications of the superconducting materials. The main interest is focussed to large scale applications like, for istance, magnets for accelerators or fusion reactors, superconducting system for NMR thomography, etc. A short paragraph is dedicated to applications for high sensitivity instrumentation. The paper is then concluded by some considerations about the potentialities of the newly discovered high critical temperature materials

  4. Superconducting quantum electronics

    International Nuclear Information System (INIS)

    Kose, V.

    1989-01-01

    This book reviews recent accomplishments, presents new results and discusses possible future developments of superconducting quantum electronics and high T c superconductivity. The three main parts of the book deal with fundamentals, sensitive detectors, and precision metrology. New results reported include: correct equivalent circuits modelling superconducting electronic devices; exact solution of the Mattis-Bardeen equations describing various experiments for thin films; complete theoretical description and experimental results for a new broad band spectrum analyzer; a new Josephson junction potentiometer allowing tracing of unknown voltage ratios back to well-known frequency ratios; and fast superconducting SQUID shift registers enabling the production of calculable noise power spectra in the microwave region

  5. Superconducting linear accelerator cryostat

    International Nuclear Information System (INIS)

    Ben-Zvi, I.; Elkonin, B.V.; Sokolowski, J.S.

    1984-01-01

    A large vertical cryostat for a superconducting linear accelerator using quarter wave resonators has been developed. The essential technical details, operational experience and performance are described. (author)

  6. Basic Study of Superconductive Actuator

    OpenAIRE

    涌井, 和也; 荻原, 宏康

    2000-01-01

    There are two kinds of electromagnetic propulsion ships : a superconductive electromagnetic propulsion ship and a superconductive electricity propulsion ship. A superconductive electromagnetic propulsion ship uses the electromagnetic force (Lorenz force) by the interaction between a magnetic field and a electric current. On the other hand, a superconductive electricity propulsion ship uses screws driven by a superconductive motor. A superconductive propulsion ship technique has the merits of ...

  7. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  8. Mechanism of enhancement of controllable secondary-electron emission from fast single electrons

    International Nuclear Information System (INIS)

    Lorikyan, M.P.; Kavalov, R.L.; Trofimchuk, N.N.; Arvanov, A.N.; Gavalyan, V.G.

    For porous KCl films (density approximately 2 percent, thickness 50-400 μm), the controllable secondary electron emission (CSEE) from fast single electrons with energies of 0.7-2 MeV was studied. An electric field E of approximately 10 4 -10 5 V/cm was set up inside the porous films and the emission curves anti sigma = f(E) and the energy spectra of the secondary electrons were measured. The mean emission coefficient anti sigma increases with increasing E, reaching a value of anti sigma approximately equal to 230. Internal enhancement of CSEE under the action of the E field is explained by a process similar to the Townsend semi-self-maintained discharge in gases. The mean free path L/sub e/ of the secondary electrons estimated on the basis of this mechanism of CSEE enhancement is in good agreement with the L/sub e/ value obtained independently from the energy spectra of the secondary electrons. The report examines the effect of the first critical potential U/sub il/ and of the electron affinity of the dielectric α on the formation of CSEE from a porous dielectric film. The possibility of using such films in particle detectors is discussed

  9. Landau-Zener-Stückelberg Interferometry of a Single Electronic Spin in a Noisy Environment

    Directory of Open Access Journals (Sweden)

    Pu Huang

    2011-08-01

    Full Text Available We demonstrate quantum coherent control of single electronic spins in a nitron-vacancy center in diamond by exploiting and implementing the general concept of Landau-Zener-Stückelberg interferometry at room temperature. The interferometry manipulates an effective two-level system of electronic spins which are coupled to the nearby ^{14}N nuclear spin in the nitron-vacancy center as well as the nuclear spin bath in the diamond. With a microwave field to control the energy gap between the two levels and an AC field as the time-dependent driving field in Landau-Zener-Stückelberg interferometry, the interference pattern can be generated and controlled by controlling a number of parameters in the fields, corresponding to coherent control of the state of the electronic spins. In particular, the interference pattern is observed oscillating as a function of the frequency of the microwave field. Decays in the visibility of the interference pattern are also observed and well explained by numerical simulation which takes into account the thermal fluctuations arising from the nuclear bath. Therefore, our work also demonstrates that Landau-Zener-Stückelberg interferometry can be used for probing decoherence processes of electronic spins.

  10. Measurement of single electron production up to 45 GeV/c transverse momentum at the CERN ISR

    CERN Document Server

    Pérez, P; Clark, A G; Darriulat, Pierre; Eggert, K; Hungerbühler, V; Jenni, Peter; Modis, T; Smadja, G; Strauss, J S; Strolin, P; Tarnopolsky, G J; Teiger, J; Tur, C; Vialle, J P; Zaccone, Henri; Zallo, A; Zylberstejn, A

    1982-01-01

    The production of single electrons of transverse momentum between 1.8 and 4.5 GeV/c is measured in pp collisions at \\sqrt{s}=53 and 63 GeV. Contributions from rho , omega , phi , psi , Upsilon , DD and Drell-Yan pairs are deduced from measurements in the same apparatus.

  11. Stochastic resonance in an ensemble of single-electron neuromorphic devices and its application to competitive neural networks

    International Nuclear Information System (INIS)

    Oya, Takahide; Asai, Tetsuya; Amemiya, Yoshihito

    2007-01-01

    Neuromorphic computing based on single-electron circuit technology is gaining prominence because of its massively increased computational efficiency and the increasing relevance of computer technology and nanotechnology [Likharev K, Mayr A, Muckra I, Tuerel O. CrossNets: High-performance neuromorphic architectures for CMOL circuits. Molec Electron III: Ann NY Acad Sci 1006;2003:146-63; Oya T, Schmid A, Asai T, Leblebici Y, Amemiya Y. On the fault tolerance of a clustered single-electron neural network for differential enhancement. IEICE Electron Expr 2;2005:76-80]. The maximum impact of these technologies will be strongly felt when single-electron circuits based on fault- and noise-tolerant neural structures can operate at room temperature. In this paper, inspired by stochastic resonance (SR) in an ensemble of spiking neurons [Collins JJ, Chow CC, Imhoff TT. Stochastic resonance without tuning. Nature 1995;376:236-8], we propose our design of a basic single-electron neural component and report how we examined its statistical results on a network

  12. Local switching of two-dimensional superconductivity using the ferroelectric field effect

    Science.gov (United States)

    Takahashi, K. S.; Gabay, M.; Jaccard, D.; Shibuya, K.; Ohnishi, T.; Lippmaa, M.; Triscone, J.-M.

    2006-05-01

    Correlated oxides display a variety of extraordinary physical properties including high-temperature superconductivity and colossal magnetoresistance. In these materials, strong electronic correlations often lead to competing ground states that are sensitive to many parameters-in particular the doping level-so that complex phase diagrams are observed. A flexible way to explore the role of doping is to tune the electron or hole concentration with electric fields, as is done in standard semiconductor field effect transistors. Here we demonstrate a model oxide system based on high-quality heterostructures in which the ferroelectric field effect approach can be studied. We use a single-crystal film of the perovskite superconductor Nb-doped SrTiO3 as the superconducting channel and ferroelectric Pb(Zr,Ti)O3 as the gate oxide. Atomic force microscopy is used to locally reverse the ferroelectric polarization, thus inducing large resistivity and carrier modulations, resulting in a clear shift in the superconducting critical temperature. Field-induced switching from the normal state to the (zero resistance) superconducting state was achieved at a well-defined temperature. This unique system could lead to a field of research in which devices are realized by locally defining in the same material superconducting and normal regions with `perfect' interfaces, the interface being purely electronic. Using this approach, one could potentially design one-dimensional superconducting wires, superconducting rings and junctions, superconducting quantum interference devices (SQUIDs) or arrays of pinning centres.

  13. Radiation effects on superconductivity

    International Nuclear Information System (INIS)

    Brown, B.S.

    1975-01-01

    The effect of radiation on the superconducting transition temperature (T/sub c/), upper critical field (H/sub c2/), and volume-pinning-force density (F/sub p/) were discussed for the three kinds of superconducting material (elements, alloys, and compounds). 11 figures, 3 tables, 86 references

  14. Superconducting elliptical cavities

    CERN Document Server

    Sekutowicz, J K

    2011-01-01

    We give a brief overview of the history, state of the art, and future for elliptical superconducting cavities. Principles of the cell shape optimization, criteria for multi-cell structures design, HOM damping schemes and other features are discussed along with examples of superconducting structures for various applications.

  15. Superconductivity in technology

    International Nuclear Information System (INIS)

    Komarek, P.

    1976-01-01

    Physics, especially high energy physics and solid state physics was the first area in which superconducting magnets were used but in the long run, the most extensive application of superconductivity will probably be in energy technology. Superconducting power transmission cables, magnets for energy conversion in superconducting electrical machines, MHD-generators and fusion reactors and magnets for energy storage are being investigated. Magnets for fusion reactors will have particularly large physical dimensions, which means that much development effort is still needed, for there is no economic alternative. Superconducting surfaces in radio frequency cavities can give Q-values up to a factor of 10 6 higher than those of conventional resonators. Particle accelerators are the important application. And for telecommunication, simple coaxial superconducting radio frequency cables seem promising. The tunnel effect in superconducting junctions is now being developed commercially for sensitive magnetometers and may soon possibly feature in the memory cells of computer devices. Hence superconductivity can play an important role in the technological world, solving physical and technological problems and showing economic advantages as compared with possible conventional techniques, bearing also in mind the importance of reliability and safety. (author)

  16. Academic training: Applied superconductivity

    CERN Multimedia

    2007-01-01

    LECTURE SERIES 17, 18, 19 January from 11.00 to 12.00 hrs Council Room, Bldg 503 Applied Superconductivity : Theory, superconducting Materials and applications E. PALMIERI/INFN, Padova, Italy When hearing about persistent currents recirculating for several years in a superconducting loop without any appreciable decay, one realizes that we are dealing with a phenomenon which in nature is the closest known to the perpetual motion. Zero resistivity and perfect diamagnetism in Mercury at 4.2 K, the breakthrough during 75 years of several hundreds of superconducting materials, the revolution of the "liquid Nitrogen superconductivity"; the discovery of still a binary compound becoming superconducting at 40 K and the subsequent re-exploration of the already known superconducting materials: Nature discloses drop by drop its intimate secrets and nobody can exclude that the last final surprise must still come. After an overview of phenomenology and basic theory of superconductivity, the lectures for this a...

  17. Superconducting rotating machines

    International Nuclear Information System (INIS)

    Smith, J.L. Jr.; Kirtley, J.L. Jr.; Thullen, P.

    1975-01-01

    The opportunities and limitations of the applications of superconductors in rotating electric machines are given. The relevant properties of superconductors and the fundamental requirements for rotating electric machines are discussed. The current state-of-the-art of superconducting machines is reviewed. Key problems, future developments and the long range potential of superconducting machines are assessed

  18. Superconductivity in bad metals

    International Nuclear Information System (INIS)

    Emery, V.J.; Kivelson, S.A.

    1995-01-01

    It is argued that many synthetic metals, including high temperature superconductors are ''bad metals'' with such a poor conductivity that the usual mean-field theory of superconductivity breaks down because of anomalously large classical and quantum fluctuations of the phase of the superconducting order parameter. Some consequences for high temperature superconductors are described

  19. Logarithmic current-measuring transistor circuits

    DEFF Research Database (Denmark)

    Højberg, Kristian Søe

    1967-01-01

    Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

  20. Distributed amplifier using Josephson vortex flow transistors

    International Nuclear Information System (INIS)

    McGinnis, D.P.; Beyer, J.B.; Nordman, J.E.

    1986-01-01

    A wide-band traveling wave amplifier using vortex flow transistors is proposed. A vortex flow transistor is a long Josephson junction used as a current controlled voltage source. The dual nature of this device to the field effect transistor is exploited. A circuit model of this device is proposed and a distributed amplifier utilizing 50 vortex flow transistors is predicted to have useful gain to 100 GHz

  1. The point of practical use for the transistor circuit

    International Nuclear Information System (INIS)

    1996-01-01

    This is comprised of eight chapters and goes as follows; what is transistor? the first step for use of transistor such as connection between power and signal source, static characteristic of transistor and equivalent circuit of transistor, design of easy small-signal amplifier circuit, design for amplification of electric power and countermeasure for prevention of trouble, transistor concerned interface, transistor circuit around micro computer, transistor in active use of FET and power circuit and transistor. It has an appendix on transistor and design of bias of FET circuits like small signal transistor circuit and FET circuit.

  2. Submicron superconducting structures

    International Nuclear Information System (INIS)

    Golovashkin, A.I.; Lykov, A.N.

    1986-01-01

    An overview of works concerning superconducting structures of submicron dimensions and a system of such structures is given. It is noted that usage of the above structures in superconducting microelectronics permits, first, to increase the element packing density, to decrease the signal transmission time, capacity, power dissipated in high-frequency applications. Secondly, negligible coherence length in transition metals, their alloys and high-temperature compounds also restrict the dimensions of superconducting weak couplings when the 'classical' Josephson effect is displayed. The most effective methods for production of submicron superconducting structures are the following: lithography, double scribering. Recently the systems of superconducting submicron elements are extensively studied. It is shown that such systems can be phased by magnetic field

  3. Superconducting wind turbine generators

    DEFF Research Database (Denmark)

    Abrahamsen, Asger Bech; Mijatovic, Nenad; Seiler, Eugen

    2010-01-01

    , the main challenge of the superconducting direct drive technology is to prove that the reliability is superior to the alternative drive trains based on gearboxes or permanent magnets. A strategy of successive testing of superconducting direct drive trains in real wind turbines of 10 kW, 100 kW, 1 MW and 10......We have examined the potential of 10 MW superconducting direct drive generators to enter the European offshore wind power market and estimated that the production of about 1200 superconducting turbines until 2030 would correspond to 10% of the EU offshore market. The expected properties of future...... offshore turbines of 8 and 10 MW have been determined from an up-scaling of an existing 5 MW turbine and the necessary properties of the superconducting drive train are discussed. We have found that the absence of the gear box is the main benefit and the reduced weight and size is secondary. However...

  4. Superconducting Wind Turbine Generators

    Directory of Open Access Journals (Sweden)

    Yunying Pan

    2016-08-01

    Full Text Available Wind energy is well known as a renewable energy because its clean and less polluted characteristic, which is the foundation of development modern wind electricity. To find more efficient wind turbine is the focus of scientists around the world. Compared from conventional wind turbines, superconducting wind turbine generators have advantages at zero resistance, smaller size and lighter weight. Superconducting wind turbine will inevitably become the main trends in this area. This paper intends to introduce the basic concept and principle of superconductivity, and compare form traditional wind turbine to obtain superiority, then to summary three proposed machine concept.While superconductivity have difficulty  in modern technology and we also have proposed some challenges in achieving superconducting wind turbine finally.

  5. Transistor challenges - A DRAM perspective

    International Nuclear Information System (INIS)

    Faul, Juergen W.; Henke, Dietmar

    2005-01-01

    Key challenges of the transistor scaling from a DRAM perspective will be reviewed. Both, array transistors as well as DRAM support devices face challenges that differ essentially from high performance logic device scaling. As a major difference, retention time and standby current requirements characterize special boundary conditions in the DRAM device design. Array device scaling is determined by a chip size driven aggressive node scaling. To continue scaling, major innovations need to be introduced into state-of-the-art planar array transistors. Alternatively, non planar device concepts will have to be evaluated. Support device design for DRAMs is driven by today's market demand for increased chip performances at little to no extra cost. Major innovations are required to continue that path. Besides this strive for performance increase, special limitations for 'on pitch' circuits at the array edge will come up due to the aggressive cell size scaling

  6. Magnetic Vortex Based Transistor Operations

    Science.gov (United States)

    Kumar, D.; Barman, S.; Barman, A.

    2014-01-01

    Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan–out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT). PMID:24531235

  7. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun

    2016-01-01

    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  8. Photon-gated spin transistor

    OpenAIRE

    Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

    2017-01-01

    Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

  9. Programmable, automated transistor test system

    Science.gov (United States)

    Truong, L. V.; Sundburg, G. R.

    1986-01-01

    A programmable, automated transistor test system was built to supply experimental data on new and advanced power semiconductors. The data will be used for analytical models and by engineers in designing space and aircraft electric power systems. A pulsed power technique was used at low duty cycles in a nondestructive test to examine the dynamic switching characteristic curves of power transistors in the 500 to 1000 V, 10 to 100 A range. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software.

  10. Controllable Quantum States Mesoscopic Superconductivity and Spintronics (MS+S2006)

    Science.gov (United States)

    Takayanagi, Hideaki; Nitta, Junsaku; Nakano, Hayato

    2008-10-01

    distance on the magnetization configuration of submicron-sized ferromagnetic rings / Tetsuya Miyawaki. A wide GaAs/GaAlAs quantum well simultaneously containing two dimensional electrons and holes / Ane Jensen. Simulation of the photon-spin quantum state transfer process / Yoshiaki Rikitake. Magnetotransport in two-dimensional electron gases on cylindrical surface / Friedland Klaus-Juergen. Full counting statistics for a single-electron transistor at intermediate conductance / Yasuhiro Utsumi. Creation of spin-polarized current using quantum point contacts and its detection / Mikio Eto. Density dependent electron effective mass in a back-gated quantum well / S. Nomura. The supersymmetric sigma formula and metal-insulator transition in diluted magnetic semiconductors / I. Kanazawa. Spin-photovoltaic effect in quantum wires / A. Fedorov -- Quantum interference. Nonequilibrium transport in Aharonov-Bohm interferometer with electron-phonon interaction / Akiko Ueda. Fano resonance and its breakdown in AB ring embedded with a molecule / Shigeo Fujimoto, Yuhei Natsume. Quantum resonance above a barrier in the presence of dissipation / Kohkichi Konno. Ensemble averaging in metallic quantum networks / F. Mallet -- Coherence and order in exotic materials. Progress towards an electronic array on liquid helium / David Rees. Measuring noise and cross correlations at high frequencies in nanophysics / T. Martin. Single wall carbon nanotube weak links / K. Grove-Rasmussen. Optical preparation of nuclear spins coupled to a localized electron spin / Guido Burkard. Topological effects in charge density wave dynamics / Toru Matsuura. Studies on nanoscale charge-density-wave systems: fabrication technique and transport phenomena / Katsuhiko Inagaki. Anisotropic behavior of hysteresis induced by the in-plane field in the v = 2/3 quantum Hall state / Kazuki Iwata. Phase diagram of the v = 2 bilayer quantum Hall state / Akira Fukuda -- Trapped ions (special talk). Quantum computation with trapped

  11. Ultrashort and coherent single-electron pulses for diffraction at ultimate resolutions

    International Nuclear Information System (INIS)

    Kirchner, Friedrich Oscar

    2013-01-01

    Ultrafast electron diffraction is a powerful tool for studying structural dynamics with femtosecond temporal and sub-aangstroem spatial resolutions. It benefits from the high scattering cross-sections of electrons compared X-rays and allows the examination of thin samples, surfaces and gases. One of the main challenges in ultrafast electron diffraction is the generation of electron pulses with a short duration and a large transverse coherence. The former limits the temporal resolution of the experiment while the latter determines the maximum size of the scattering structures that can be studied. In this work, we strive to push the limits of electron diffraction towards higher temporal and spatial resolutions. The decisive step in our approach is to eliminate all detrimental effects caused by Coulomb repulsion between the electrons by reducing the number of electrons per pulse to one. In this situation, the electrons' longitudinal and transverse velocity distributions are determined solely by the photoemission process. By reducing the electron source size on the photocathode, we make use of the small transverse velocity spread to produce electron pulses with a transverse coherence length of 20 nm, which is about an order of magnitude larger than the reported values for comparable experiments. The energy distribution of an ensemble of single-electron pulses from a photoemission source is directly linked to the mismatch between the photon energy and the cathode's work function. This excess energy can be reduced by using a photon energy close to the material's work function. Using a tunable source of ultraviolet pulses, we demonstrate the reduction of the velocity spread of the electrons, resulting in a shorter duration of the electron pulses. The reduced electron pulse durations achieved by a tunable excitation or by other approaches require new characterization techniques for electron pulses. We developed a novel method for the characterization of electron pulses at

  12. Electric-field-induced superconductivity detected by magnetization measurements of an electric-double-layer capacitor

    International Nuclear Information System (INIS)

    Kasahara, Yuichi; Takeuchi, Yuki; Ye, Jianting; Yuan, Hongtao; Shimotani, Hidekazu; Iwasa, Yoshihiro; Nishimura, Takahiro; Sato, Tatsuya

    2010-01-01

    We report evidence for superconductivity induced by the application of strong electric fields onto the surface of a band insulator, ZrNCl, provided by the observation of a shielding diamagnetic signal. We introduced an electric-double-layer capacitor configuration and in situ magnetization measurements at low temperatures as a method to detect the novel electric-field-induced superconducting state. The results showed excellent agreement with a previous report using a transistor configuration, demonstrating that the present technique is a novel method for investigating the nonequilibrium phase induced by electric fields. (author)

  13. Superconductivity and electron microscopy

    International Nuclear Information System (INIS)

    Hawkes, P.W.; Valdre, U.

    1977-01-01

    In this review article, two aspects of the role of superconductivity in electron microscopy are examined: (i) the development of superconducting devices (mainly lenses) and their incorporation in electron microscopes; (ii) the development of electron microscope techniques for studying fundamental and technological problems associated with superconductivity. The first part opens with a brief account of the relevant properties of conventional lenses, after which the various types of superconducting lenses are described and their properties compared. The relative merits and inconveniences of superconducting and conventional lenses are examined, particular attention being paid to the spherical and chromatic aberration coefficients at accelerating voltages above a megavolt. This part closes with a survey of the various microscope designs that have been built or proposed, incorporating superconducting components. In the second part, some methods that have been or might be used in the study of superconductivity in the electron microscope are described. A brief account of the types of application for which they are suitable is given. (author)

  14. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  15. Detecting stray microwaves and nonequilibrium quasiparticles in thin films by single-electron tunneling

    Science.gov (United States)

    Saira, Olli-Pentti; Maisi, Ville; Kemppinen, Antti; Möttönen, Mikko; Pekola, Jukka

    2013-03-01

    Superconducting thin films and tunnel junctions are the building blocks of many state-of-the-art technologies related to quantum information processing, microwave detection, and electronic amplification. These devices operate at millikelvin temperatures, and - in a naive picture - their fidelity metrics are expected to improve as the temperature is lowered. However, very often one finds in the experiment that the device performance levels off around 100-150 mK. In my presentation, I will address three common physical mechanisms that can cause such saturation: stray microwaves, nonequilibrium quasiparticles, and sub-gap quasiparticle states. The new experimental data I will present is based on a series of studies on quasiparticle transport in Coulomb-blockaded normal-insulator-superconductor tunnel junction devices. We have used a capacitively coupled SET electrometer to detect individual quasiparticle tunneling events in real time. We demonstrate the following record-low values for thin film aluminum: quasiparticle density nqp < 0 . 033 / μm3 , normalized density of sub-gap quasiparticle states (Dynes parameter) γ < 1 . 6 ×10-7 . I will also discuss some sample stage and chip designs that improve microwave shielding.

  16. Superconducting materials and magnets

    International Nuclear Information System (INIS)

    1991-04-01

    The Technical Committee Meeting on Superconducting Materials and Magnets was convened by the IAEA and held by invitation of the Japanese government on September 4-6, 1989 in Tokyo. The meeting was hosted by the National Research Institute for Metals. Topics of the conference related to superconducting magnets and technology with particular application to fusion and the superconducting supercollider. Technology using both high and low-temperature superconductors was discussed. This document is a compendium of the papers presented at the meeting. Refs, figs and tabs

  17. 'Speedy' superconducting circuits

    International Nuclear Information System (INIS)

    Holst, T.

    1994-01-01

    The most promising concept for realizing ultra-fast superconducting digital circuits is the Rapid Single Flux Quantum (RSFQ) logic. The basic physical principle behind RSFQ logic, which include the storage and transfer of individual magnetic flux quanta in Superconducting Quantum Interference Devices (SQUIDs), is explained. A Set-Reset flip-flop is used as an example of the implementation of an RSFQ based circuit. Finally, the outlook for high-temperature superconducting materials in connection with RSFQ circuits is discussed in some details. (au)

  18. ESCAR superconducting magnet system

    International Nuclear Information System (INIS)

    Gilbert, W.S.; Meuser, R.B.; Pope, W.L.; Green, M.A.

    1975-01-01

    Twenty-four superconducting dipoles, each about 1 meter long, provide the guide field for the Experimental Superconducting Accelerator Ring proton accelerator--storage ring. Injection of 50 MeV protons corresponds to a 3 kG central dipole field, and a peak proton energy of 4.2 GeV corresponds to a 46 kG central field. Thirty-two quadrupoles provide focusing. The 56 superconducting magnets are contained in 40 cryostats that are cryogenically connected in a novel series ''weir'' arrangement. A single 1500 W refrigeration plant is required. Design and testing of the magnet and cryostat system are described. (U.S.)

  19. Superconducting tin core fiber

    International Nuclear Information System (INIS)

    Homa, Daniel; Liang, Yongxuan; Hill, Cary; Kaur, Gurbinder; Pickrell, Gary

    2015-01-01

    In this study, we demonstrated superconductivity in a fiber with a tin core and fused silica cladding. The fibers were fabricated via a modified melt-draw technique and maintained core diameters ranging from 50-300 microns and overall diameters of 125-800 microns. Superconductivity of this fiber design was validated via the traditional four-probe test method in a bath of liquid helium at temperatures on the order of 3.8 K. The synthesis route and fiber design are perquisites to ongoing research dedicated all-fiber optoelectronics and the relationships between superconductivity and the material structures, as well as corresponding fabrication techniques. (orig.)

  20. Superconductivity in doped insulators

    International Nuclear Information System (INIS)

    Emery, V.J.; Kivelson, S.A.

    1995-01-01

    It is shown that many synthetic metals, including high temperature superconductors are ''bad metals'', with such a poor conductivity that the usual meanfield theory of superconductivity breaks down because of anomalously large classical and quantum fluctuations of the phase of the superconducting order parameter. It is argued that the supression of a first order phase transition (phase separation) by the long-range Coulomb interaction leads to high temperature superconductivity accompanied by static or dynamical charge inhomogeneIty. Evidence in support of this picture for high temperature superconductors is described

  1. Introduction to superconductivity

    CERN Document Server

    Darriulat, Pierre

    1998-01-01

    The lecture series will address physicists, such as particle and nuclear physicists, familiar with non-relativistic quantum mechanics but not with solid state physics. The aim of this introduction to low temperature superconductivity is to give sufficient bases to the student for him/her to be able to access the scientific literature on this field. The five lectures will cover the following topics : 1. Normal metals, free electron gas, chambers equation. 2. Cooper pairs, the BCS ground state, quasi particle excitations. 3. DC superconductivity, Meissner state, dirty superconductors.4. Self consistent approach, Ginsburg Landau equations, Abrikosov fluxon lattice. 5. Josephson effects, high temperature superconductivity.

  2. On theory of single-molecule transistor

    International Nuclear Information System (INIS)

    Tran Tien Phuc

    2009-01-01

    The results of the study on single-molecule transistor are mainly investigated in this paper. The structure of constructed single-molecule transistor is similar to a conventional MOSFET. The conductive channel of the transistors is a single-molecule of halogenated benzene derivatives. The chemical simulation software CAChe was used to design and implement for the essential parameter of the molecules utilized as the conductive channel. The GUI of Matlab has been built to design its graphical interface, calculate and plot the output I-V characteristic curves for the transistor. The influence of temperature, length and width of the conductive channel, and gate voltage is considered. As a result, the simulated curves are similar to the traditional MOSFET's. The operating temperature range of the transistors is wider compared with silicon semiconductors. The supply voltage for transistors is only about 1 V. The size of transistors in this research is several nanometers.

  3. Analysing organic transistors based on interface approximation

    International Nuclear Information System (INIS)

    Akiyama, Yuto; Mori, Takehiko

    2014-01-01

    Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region

  4. Single-electron capture into Ar+ excited states in Ar2 + Na collision below 12 keV, 1

    International Nuclear Information System (INIS)

    Matsumoto, Atsushi; Tsurubuchi, Seiji; Okuno, Kazuhiko; Ohtani, Shunsuke; Iwai, Tsuruji.

    1979-08-01

    Emission spectra between 2800 and 6000 A have been observed at the ionic energies from 0.2 to 12 keV. Absolute measurements of emission cross-sections have been made for the emission lines coming from ArII excited states at 4 and 8 keV with a crossed-beam technique. Processes of single-electron capture into the ArII 4p- and 4p'-states, with exothermicity of a few eV, take place dominantly (--10 15 cm 2 ), while the endothermic processes producing ArII in the 4d- and 5s-states occur with small cross-sections. Sum of the cross-sections for electron capture into the excited states observed is comparable with the total single-electron capture cross-section estimated from attenuation measurements of ion currents. Possible errors and uncertainties are discussed. (author)

  5. Single-electron capture into Ar+ excited states in Ar2++Na collision below 12 keV, 1

    International Nuclear Information System (INIS)

    Matsumoto, Atsushi; Tsurubuchi, Seiji; Iwai, Tsuruji; Ohtani, Shunsuke; Okuno, Kazuhiko

    1980-01-01

    Emission spectra between 2800 and 6000 A have been observed at the ionic energies from 0.2 to 12 keV. Absolute measurements of emission cross-sections have been made for the emission lines coming from ArII excited states at 4 and 8 keV with a crossed-beam technique. Processes of single-electron capture into the ArII 4p- and 4p'-states, with exothermicity of a few eV, take place dominantly (--10 -15 cm 2 ), while the endothermic processes producing ArII in the 4d- and 5s-states occur with small cross-sections. Sum of the cross-sections for electron capture into the excited states observed is comparable with the total single-electron capture cross-section estimated from attenuation measurements of ion currents. Possible errors and uncertainties are discussed. (author)

  6. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  7. Magnetic and superconducting nanowires

    DEFF Research Database (Denmark)

    Piraux, L.; Encinas, A.; Vila, L.

    2005-01-01

    magnetic and superconducting nanowires. Using different approaches entailing measurements on both single wires and arrays, numerous interesting physical properties have been identified in relation to the nanoscopic dimensions of these materials. Finally, various novel applications of the nanowires are also...

  8. Hybrid superconducting magnetic suspensions

    International Nuclear Information System (INIS)

    Tixador, P.; Hiebel, P.; Brunet, Y.; Chaud, X.; Gautier-Picard, P.

    1996-01-01

    Superconductors, especially high T c ones, are the most attractive materials to design stable and fully passive magnetic suspensions which have to control five degrees of freedom. The hybrid superconducting magnetic suspensions present high performances and a simple cooling mode. They consist of a permanent magnet bearing, stabilized by a suitable magnet-superconductor structure. Several designs are given and compared in terms of forces and stiffnesses. The design of the magnet bearing plays an important part. The superconducting magnetic bearing participates less in levitation but must provide a high stabilizing stiffness. This is achieved by the magnet configuration, a good material in term of critical current density and field cooling. A hybrid superconducting suspension for a flywheel is presented. This system consists of a magnet thrust bearing stabilized by superconductors interacting with an alternating polarity magnet structure. First tests and results are reported. Superconducting materials are magnetically melt-textured YBaCuO

  9. Superconducting Technology Assessment

    National Research Council Canada - National Science Library

    2005-01-01

    This Superconducting Technology Assessment (STA) has been conducted by the National Security Agency to address the fundamental question of a potential replacement for silicon complementary metal oxide semiconductor (CMOS...

  10. Superconductivity: materials and applications

    International Nuclear Information System (INIS)

    Duchateau, J.L.; Kircher, F.; Leveque, J.; Tixador, P.

    2008-01-01

    This digest paper presents the different types of superconducting materials: 1 - the low-TC superconductors: the multi-filament composite as elementary constituent, the world production of NbTi, the superconducting cables of the LHC collider and of the ITER tokamak; 2 - the high-TC superconductors: BiSrCaCuO (PIT 1G) ribbons and wires, deposited coatings; 3 - application to particle physics: the the LHC collider of the CERN, the LHC detectors; 4 - applications to thermonuclear fusion: Tore Supra and ITER tokamaks; 5 - NMR imaging: properties of superconducting magnets; 6 - applications in electrotechnics: cables, motors and alternators, current limiters, transformers, superconducting energy storage systems (SMES). (J.S.)

  11. Superconductivity and its devices

    International Nuclear Information System (INIS)

    Forbes, D.S.

    1981-01-01

    Among the more important developments that are discussed are cryotrons, superconducting motors and generators, and high-field magnets. Cryotrons will create faster and more economical computer systems. Superconducting motors and generators will cost much less to build than conventional electric generators and cut fuel consumption. Moreover, high-field magnets are being used to confine plasma in connection with nuclear fusion. Superconductors have a vital role to play in all of these developments. Most importantly, though, are the magnetic properties of superconductivity. Superconducting magnets are an integral part of nuclear fusion. In addition, high-field magnets are necessary in the use of accelerators, which are needed to study the interactions between elementary particles

  12. Superconductivity: Heike's heritage

    NARCIS (Netherlands)

    van der Marel, D.; Golden, M.

    2011-01-01

    A century ago, Heike Kamerlingh Onnes discovered superconductivity. And yet, despite the conventional superconductors being understood, the list of unconventional superconductors is growing — for which unconventional theories may be required.

  13. RADIOFREQUENCY SUPERCONDUCTIVITY: Workshop

    International Nuclear Information System (INIS)

    Lengeler, Herbert

    1989-01-01

    Superconducting radiofrequency is already playing an important role in the beam acceleration system for the TRISTAN electron-positron collider at the Japanese KEK Laboratory and new such systems are being prepared for other major machines. Thus the fourth Workshop on Radiofrequency Superconductivity, organized by KEK under the chairmanship of local specialist Yuzo Kojima and held just before the International Conference on High Energy Accelerators, had much progress to review and even more to look forward to

  14. Stacked magnet superconducting bearing

    International Nuclear Information System (INIS)

    Rigney, T.K. II; Saville, M.P.

    1993-01-01

    A superconducting bearing is described, comprising: a plurality of permanent magnets magnetized end-to-end and stacked side-by-side in alternating polarity, such that flux lines flow between ends of adjacent magnets; isolating means, disposed between said adjacent magnets, for reducing flux leakage between opposing sides of said adjacent magnets; and a member made of superconducting material having at least one surface in communication with said flux lines

  15. Superconductivity at high pressures

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, N B; Ginzburg, N I

    1969-07-01

    Work published during the last 3 or 4 yrs concerning the effect of pressure on superconductivity is reviewed. Superconducting modifications of Si, Ge, Sb, Te, Se, P and Ce. Change of Fermi surface under pressure for nontransition metals. First experiments on the influence of pressure on the tunneling effect in superconductors provide new information on the nature of the change in phonon and electron energy spectra of metals under hydrostatic compression. 78 references.

  16. Superconductivity: A critical analysis

    International Nuclear Information System (INIS)

    Sacchetti, Nicola

    1997-01-01

    It is some forty years now that superconductivity has entered into the field of applied Physics. Countless applications have been proposed some of which have been successfully tested in the form of prototypes and relatively few have become widely used products. This article offers an objective examination of what applied superconductivity represents in the area of modern technology highlighting its exclusive advantages and its inevitable limitations

  17. Generalized Superconductivity. Generalized Levitation

    International Nuclear Information System (INIS)

    Ciobanu, B.; Agop, M.

    2004-01-01

    In the recent papers, the gravitational superconductivity is described. We introduce the concept of generalized superconductivity observing that any nongeodesic motion and, in particular, the motion in an electromagnetic field, can be transformed in a geodesic motion by a suitable choice of the connection. In the present paper, the gravitoelectromagnetic London equations have been obtained from the generalized Helmholtz vortex theorem using the generalized local equivalence principle. In this context, the gravitoelectromagnetic Meissner effect and, implicitly, the gravitoelectromagnetic levitation are given. (authors)

  18. Superconducting magnets for accelerators

    International Nuclear Information System (INIS)

    Denisov, Yu.N.

    1979-01-01

    Expediency of usage and possibilities arising in application of superconducting devices in magnetic systems of accelerators and experimental nuclear-physical devices are studied. Parameters of specific devices are given. It is emphasized that at the existing level of technological possibilities, construction and usage of superconducting magnetic systems in experimental nuclear physics should be thought of as possible, from the engineering, and expedient, from the economical viewpoints [ru

  19. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

  20. Emergent Higgsless Superconductivity

    Directory of Open Access Journals (Sweden)

    Cristina Diamantini M.

    2017-01-01

    Full Text Available We present a new Higgsless model of superconductivity, inspired from anyon superconductivity but P- and T-invariant and generalizable to any dimension. While the original anyon superconductivity mechanism was based on incompressible quantum Hall fluids as average field states, our mechanism involves topological insulators as average field states. In D space dimensions it involves a (D-1-form fictitious pseudovector gauge field which originates from the condensation of topological defects in compact lowenergy effective BF theories. There is no massive Higgs scalar as there is no local order parameter. When electromagnetism is switched on, the photon acquires mass by the topological BF mechanism. Although the charge of the gapless mode (2 and the topological order (4 are the same as those of the standard Higgs model, the two models of superconductivity are clearly different since the origins of the gap, reflected in the high-energy sectors are totally different. In 2D thi! s type of superconductivity is explicitly realized as global superconductivity in Josephson junction arrays. In 3D this model predicts a possible phase transition from topological insulators to Higgsless superconductors.

  1. Superconducting Fullerene Nanowhiskers

    Directory of Open Access Journals (Sweden)

    Yoshihiko Takano

    2012-04-01

    Full Text Available We synthesized superconducting fullerene nanowhiskers (C60NWs by potassium (K intercalation. They showed large superconducting volume fractions, as high as 80%. The superconducting transition temperature at 17 K was independent of the K content (x in the range between 1.6 and 6.0 in K-doped C60 nanowhiskers (KxC60NWs, while the superconducting volume fractions changed with x. The highest shielding fraction of a full shielding volume was observed in the material of K3.3C60NW by heating at 200 °C. On the other hand, that of a K-doped fullerene (K-C60 crystal was less than 1%. We report the superconducting behaviors of our newly synthesized KxC60NWs in comparison to those of KxC60 crystals, which show superconductivity at 19 K in K3C60. The lattice structures are also discussed, based on the x-ray diffraction (XRD analyses.

  2. High-current applications of superconductivity

    International Nuclear Information System (INIS)

    Komarek, P.

    1995-01-01

    The following topics were dealt with: superconducting materials, design principles of superconducting magnets, magnets for research and engineering, superconductivity for power engineering, superconductivity in nuclear fusion technology, economical considerations

  3. Superconducting nanostructured materials

    International Nuclear Information System (INIS)

    Metlushko, V.

    1998-01-01

    Within the last year it has been realized that the remarkable properties of superconducting thin films containing a periodic array of defects (such as sub-micron sized holes) offer a new route for developing a novel superconducting materials based on precise control of microstructure by modern photolithography. A superconductor is a material which, when cooled below a certain temperature, loses all resistance to electricity. This means that superconducting materials can carry large electrical currents without any energy loss--but there are limits to how much current can flow before superconductivity is destroyed. The current at which superconductivity breaks down is called the critical current. The value of the critical current is determined by the balance of Lorentz forces and pinning forces acting on the flux lines in the superconductor. Lorentz forces proportional to the current flow tend to drive the flux lines into motion, which dissipates energy and destroys zero resistance. Pinning forces created by isolated defects in the microstructure oppose flux line motion and increase the critical current. Many kinds of artificial pinning centers have been proposed and developed to increase critical current performance, ranging from dispersal of small non-superconducting second phases to creation of defects by proton, neutron or heavy ion irradiation. In all of these methods, the pinning centers are randomly distributed over the superconducting material, causing them to operate well below their maximum efficiency. We are overcome this drawback by creating pinning centers in aperiodic lattice (see Fig 1) so that each pin site interacts strongly with only one or a few flux lines

  4. Superconducting wind turbine generators

    International Nuclear Information System (INIS)

    Abrahamsen, A B; Seiler, E; Zirngibl, T; Andersen, N H; Mijatovic, N; Traeholt, C; Pedersen, N F; Oestergaard, J; Noergaard, P B

    2010-01-01

    We have examined the potential of 10 MW superconducting direct drive generators to enter the European offshore wind power market and estimated that the production of about 1200 superconducting turbines until 2030 would correspond to 10% of the EU offshore market. The expected properties of future offshore turbines of 8 and 10 MW have been determined from an up-scaling of an existing 5 MW turbine and the necessary properties of the superconducting drive train are discussed. We have found that the absence of the gear box is the main benefit and the reduced weight and size is secondary. However, the main challenge of the superconducting direct drive technology is to prove that the reliability is superior to the alternative drive trains based on gearboxes or permanent magnets. A strategy of successive testing of superconducting direct drive trains in real wind turbines of 10 kW, 100 kW, 1 MW and 10 MW is suggested to secure the accumulation of reliability experience. Finally, the quantities of high temperature superconducting tape needed for a 10 kW and an extreme high field 10 MW generator are found to be 7.5 km and 1500 km, respectively. A more realistic estimate is 200-300 km of tape per 10 MW generator and it is concluded that the present production capacity of coated conductors must be increased by a factor of 36 by 2020, resulting in a ten times lower price of the tape in order to reach a realistic price level for the superconducting drive train.

  5. Power transistor module for high current applications

    International Nuclear Information System (INIS)

    Cilyo, F.F.

    1975-01-01

    One of the parts needed for the control system of the 400-GeV accelerator at Fermilab was a power transistor with a safe operating area of 1800A at 50V, dc current gain of 100,000 and 20 kHz bandwidth. Since the commercially available discrete devices and power hybrid packages did not meet these requirements, a power transistor module was developed which performed satisfactorily. By connecting 13 power transistors in parallel, with due consideration for network and heat dissipation problems, and by driving these 13 with another power transistor, a super power transistor is made, having an equivalent current, power, and safe operating area capability of 13 transistors. For higher capabilities, additional modules can be conveniently added. (auth)

  6. Principles of an atomtronic transistor

    International Nuclear Information System (INIS)

    Caliga, Seth C; Anderson, Dana Z; Straatsma, Cameron J E; Zozulya, Alex A

    2016-01-01

    A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source–gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device. (paper)

  7. Superconductivity and macroscopic quantum phenomena

    International Nuclear Information System (INIS)

    Rogovin, D.; Scully, M.

    1976-01-01

    It is often asserted that superconducting systems are manifestations of quantum mechanics on a macroscopic scale. In this review article it is demonstrated that this quantum assertion is true within the framework of the microscopic theory of superconductivity. (Auth.)

  8. Superconducting state mechanisms and properties

    CERN Document Server

    Kresin, Vladimir Z; Wolf, Stuart A

    2014-01-01

    'Superconducting State' provides a very detailed theoretical treatment of the key mechanisms of superconductivity, including the current state of the art (phonons, magnons, and plasmons). A very complete description is given of the electron-phonon mechanism responsible for superconductivity in the majority of superconducting systems, and the history of its development, as well as a detailed description of the key experimental techniques used to study the superconducting state and determine the mechanisms. In addition, there are chapters describing the discovery and properties of the key superconducting compounds that are of the most interest for science, and applications including a special chapter on the cuprate superconductors. It provides detailed treatments of some very novel aspects of superconductivity, including multiple bands (gaps), the "pseudogap" state, novel isotope effects beyond BCS, and induced superconductivity.

  9. Fullerides - Superconductivity at the limit

    NARCIS (Netherlands)

    Palstra, Thomas T. M.

    The successful synthesis of highly crystalline Cs3C60, exhibiting superconductivity up to a record temperature for fullerides of 38 K, demonstrates a powerful synthetic route for investigating the origin of superconductivity in this class of materials.

  10. Rf superconducting devices

    International Nuclear Information System (INIS)

    Hartwig, W.H.; Passow, C.

    1975-01-01

    Topics discussed include (1) the theory of superconductors in high-frequency fields (London surface impedance, anomalous normal surface resistance, pippard nonlocal theory, quantum mechanical model, superconductor parameters, quantum mechanical calculation techniques for the surface, impedance, and experimental verification of surface impedance theories); (2) residual resistance (separation of losses, magnetic field effects, surface resistance of imperfect and impure conductors, residual loss due to acoustic coupling, losses from nonideal surfaces, high magnetic field losses, field emission, and nonlinear effects); (3) design and performance of superconducting devices (design considerations, materials and fabrication techniques, measurement of performance, and frequency stability); (4) devices for particle acceleration and deflection (advantages and problems of using superconductors, accelerators for fast particles, accelerators for particles with slow velocities, beam optical devices separators, and applications and projects under way); (5) applications of low-power superconducting resonators (superconducting filters and tuners, oscillators and detectors, mixers and amplifiers, antennas and output tanks, superconducting resonators for materials research, and radiation detection with loaded superconducting resonators); and (6) transmission and delay lines

  11. Superconducting Ferromagnetic Nanodiamond.

    Science.gov (United States)

    Zhang, Gufei; Samuely, Tomas; Xu, Zheng; Jochum, Johanna K; Volodin, Alexander; Zhou, Shengqiang; May, Paul W; Onufriienko, Oleksandr; Kačmarčík, Jozef; Steele, Julian A; Li, Jun; Vanacken, Johan; Vacík, Jiri; Szabó, Pavol; Yuan, Haifeng; Roeffaers, Maarten B J; Cerbu, Dorin; Samuely, Peter; Hofkens, Johan; Moshchalkov, Victor V

    2017-06-27

    Superconductivity and ferromagnetism are two mutually antagonistic states in condensed matter. Research on the interplay between these two competing orderings sheds light not only on the cause of various quantum phenomena in strongly correlated systems but also on the general mechanism of superconductivity. Here we report on the observation of the electronic entanglement between superconducting and ferromagnetic states in hydrogenated boron-doped nanodiamond films, which have a superconducting transition temperature T c ∼ 3 K and a Curie temperature T Curie > 400 K. In spite of the high T Curie , our nanodiamond films demonstrate a decrease in the temperature dependence of magnetization below 100 K, in correspondence to an increase in the temperature dependence of resistivity. These anomalous magnetic and electrical transport properties reveal the presence of an intriguing precursor phase, in which spin fluctuations intervene as a result of the interplay between the two antagonistic states. Furthermore, the observations of high-temperature ferromagnetism, giant positive magnetoresistance, and anomalous Hall effect bring attention to the potential applications of our superconducting ferromagnetic nanodiamond films in magnetoelectronics, spintronics, and magnetic field sensing.

  12. Critical current enhancement driven by suppression of superconducting fluctuation in ion-gated ultrathin FeSe

    Science.gov (United States)

    Harada, T.; Shiogai, J.; Miyakawa, T.; Nojima, T.; Tsukazaki, A.

    2018-05-01

    The framework of phase transition, such as superconducting transition, occasionally depends on the dimensionality of materials. Superconductivity is often weakened in the experimental conditions of two-dimensional thin films due to the fragile superconducting state against defects and interfacial effects. In contrast to this general trend, superconductivity in the thin limit of FeSe exhibits an opposite trend, such as an increase in critical temperature (T c) and the superconducting gap exceeding the bulk values; however, the dominant mechanism is still under debate. Here, we measured thickness-dependent electrical transport properties of the ion-gated FeSe thin films to evaluate the superconducting critical current (I c) in the ultrathin FeSe. Upon systematically decreasing the FeSe thickness by the electrochemical etching technique in the Hall bar-shaped electric double-layer transistors, we observed a dramatic enhancement of I c reaching about 10 mA and corresponding to about 107 A cm‑2 in the thinnest condition. By analyzing the transition behavior, we clarify that the suppressed superconducting fluctuation is one of the origins of the large I c in the ion-gated ultrathin FeSe films. These results indicate the existence of a robust superconducting state possibly with dense Cooper pairs at the thin limit of FeSe.

  13. Single-electron capture for 2-8 keV incident energy and direct scattering at 6 keV in He[sup 2+]-He collisions

    Energy Technology Data Exchange (ETDEWEB)

    Bordenave-Montesquieu, D.; Dagnac, R. (Toulouse-3 Univ., 31 (France). Centre de Physique Atomique)

    1992-06-14

    We studied the single-electron capture as well as the direct processes occurring when a He[sup 2+] ion is scattered by a He target. Doubly differential cross sections were measured for single-electron capture with a collision energy ranging from 2 to 8 keV and a scattering angle varying from 10' to 3[sup o]30' (laboratory frame). Single-electron capture into excited states of He[sup +] was found to be the dominant process, confirming a previous experimental study. Elastic scattering and ionization differential cross sections were measured for E = 6 keV. (Author).

  14. Single-electron capture for 2-8 keV incident energy and direct scattering at 6 keV in He2+-He collisions

    International Nuclear Information System (INIS)

    Bordenave-Montesquieu, D.; Dagnac, R.

    1992-01-01

    We studied the single-electron capture as well as the direct processes occurring when a He 2+ ion is scattered by a He target. Doubly differential cross sections were measured for single-electron capture with a collision energy ranging from 2 to 8 keV and a scattering angle varying from 10' to 3 o 30' (laboratory frame). Single-electron capture into excited states of He + was found to be the dominant process, confirming a previous experimental study. Elastic scattering and ionization differential cross sections were measured for E = 6 keV. (Author)

  15. High current transistor pulse generator

    International Nuclear Information System (INIS)

    Nesterov, V.; Cassel, R.

    1991-05-01

    A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability. 8 figs

  16. Impact of Process Technologies on ELDRS of Bipolar Transistors

    International Nuclear Information System (INIS)

    Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Zheng Yuzhan

    2010-01-01

    Radiation effects under different dose rates and annealing behaviors of domestic bipolar transistors, with same manufacture technology, were investigated.These transistors include NPN transistors of various emitter area, and LPNP transistors with different doping concentrations in emitter. It is shown that different types of transistors have different radiation responses. The results of NPN transistors show that more degradation occurs at less emitter area. Yet, the results of LPNP transistors demonstrate that transistors with lightly doped emitter are more sensitive to radiation, compared with heavily doped emitter. Finally,the mechanisms of the difference between various radiation responses were analyzed. (authors)

  17. A versatile nanotechnology to connect individual nano-objects for the fabrication of hybrid single-electron devices

    International Nuclear Information System (INIS)

    Bernand-Mantel, A; Bouzehouane, K; Seneor, P; Fusil, S; Deranlot, C; Petroff, F; Fert, A; Brenac, A; Notin, L; Morel, R

    2010-01-01

    We report on the high yield connection of single nano-objects as small as a few nanometres in diameter to separately elaborated metallic electrodes, using a 'table-top' nanotechnology. Single-electron transport measurements validate that transport occurs through a single nano-object. The vertical geometry of the device natively allows an independent choice of materials for each electrode and the nano-object. In addition ferromagnetic materials can be used without encountering oxidation problems. The possibility of elaborating such hybrid nanodevices opens new routes for the democratization of spintronic studies in low dimensions.

  18. Spin-orbit scattering in superconducting nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Alhassid, Y. [Center for Theoretical Physics, Sloane Physics Laboratory, Yale University, New Haven, Connecticut, 06520 (United States); Nesterov, K.N. [Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin, 53706 (United States)

    2017-06-15

    We review interaction effects in chaotic metallic nanoparticles. Their single-particle Hamiltonian is described by the proper random-matrix ensemble while the dominant interaction terms are invariants under a change of the single-particle basis. In the absence of spin-orbit scattering, the nontrivial invariants consist of a pairing interaction, which leads to superconductivity in the bulk, and a ferromagnetic exchange interaction. Spin-orbit scattering breaks spin-rotation invariance and when it is sufficiently strong, the only dominant nontrivial interaction is the pairing interaction. We discuss how the magnetic response of discrete energy levels of the nanoparticle (which can be measured in single-electron tunneling spectroscopy experiments) is affected by such pairing correlations and how it can provide a signature of pairing correlations. We also consider the spin susceptibility of the nanoparticle and discuss how spin-orbit scattering changes the signatures of pairing correlations in this observable. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Superconductive analogue of spin glasses

    International Nuclear Information System (INIS)

    Feigel'man, M.; Ioffe, L.; Vinokur, V.; Larkin, A.

    1987-07-01

    The properties of granular superconductors in magnetic fields, namely the existence of a new superconductive state analogue of the low-temperature superconductive state in spin glasses are discussed in the frame of the infinite-range model and the finite-range models. Experiments for elucidation of spin-glass superconductive state in real systems are suggested. 30 refs

  20. Quenches in large superconducting magnets

    International Nuclear Information System (INIS)

    Eberhard, P.H.; Alston-Garnjost, M.; Green, M.A.; Lecomte, P.; Smits, R.G.; Taylor, J.D.; Vuillemin, V.

    1977-08-01

    The development of large high current density superconducting magnets requires an understanding of the quench process by which the magnet goes normal. A theory which describes the quench process in large superconducting magnets is presented and compared with experimental measurements. The use of a quench theory to improve the design of large high current density superconducting magnets is discussed

  1. On anyon superconductivity--

    International Nuclear Information System (INIS)

    Chen, Y.-H.; Wilczek, F.; Witten, E.; Halperin, B.I.

    1989-01-01

    We investigate the statistical mechanics of a gas of fractional statistics particles in 2 + 1 dimensions. In the case of statistics very close to Fermi statistics (statistical parameter θ = π(1 - 1/n), for large n), the effect of the statistics is a weak attraction. Building upon earlier RPA calculation for the case n = 2, the authors argue that for large n perturbation theory is reliable and exhibits superfluidity (or superconductivity after coupling to electromagnetism). They describe the order parameter for this superconductng phase in terms of spontaneous breaking of commutativity of translations as opposed to the usual pairing order parameters. The vortices of the superconducting anyon gas are charged, and superconducting order parameters of the usual type vanish. They investigate the characteristic P and T violating phenomenology

  2. Connectivity and superconductivity

    CERN Document Server

    Rubinstein, Jacob

    2000-01-01

    The motto of connectivity and superconductivity is that the solutions of the Ginzburg--Landau equations are qualitatively influenced by the topology of the boundaries, as in multiply-connected samples. Special attention is paid to the "zero set", the set of the positions (also known as "quantum vortices") where the order parameter vanishes. The effects considered here usually become important in the regime where the coherence length is of the order of the dimensions of the sample. It takes the intuition of physicists and the awareness of mathematicians to find these new effects. In connectivity and superconductivity, theoretical and experimental physicists are brought together with pure and applied mathematicians to review these surprising results. This volume is intended to serve as a reference book for graduate students and researchers in physics or mathematics interested in superconductivity, or in the Schrödinger equation as a limiting case of the Ginzburg--Landau equations.

  3. Superconducting linac booster

    International Nuclear Information System (INIS)

    Srinivasan, B.; Betigeri, M.G.; Pandey, M.K.; Pillay, R.G.; Kurup, M.B.

    1997-01-01

    The report on superconducting LINAC booster, which is a joint project of Bhabha Atomic Research Centre (BARC) and Tata Institute of Fundamental Research (TIFR), brings out the work accomplished so far towards the development of the technology of superconducting LINAC to boost the energy of ions from the 14UD Pelletron. The LINAC is modular in construction with each module comprising of a helium cryostat housing four lead-plated quarter wave resonators. The resonators are superconducting for temperatures below 7.19K. An energy boost of 2 MeV/q per module is expected to be achieved. The first module and the post-tandem superbuncher have been fabricated and tested on the LINAC beam line. This report gives a summary of the technological achievements and also brings out the difficulties encountered during the R and D phase. (author)

  4. Superconducting accelerator magnet design

    International Nuclear Information System (INIS)

    Wolff, S.

    1994-01-01

    Superconducting dipoles, quadrupoles and correction magnets are necessary to achieve the high magnetic fields required for big accelerators presently in construction or in the design phase. Different designs of superconducting accelerator magnets are described and the designs chosen at the big accelerator laboratories are presented. The most frequently used cosθ coil configuration is discussed in detail. Approaches for calculating the magnetic field quality including coil end fields are presented. Design details of the cables, coils, mechanical structures, yokes, helium vessels and cryostats including thermal radiation shields and support structures used in superconducting magnets are given. Necessary material properties are mentioned. Finally, the main results of magnetic field measurements and quench statistics are presented. (orig.)

  5. Large Superconducting Magnet Systems

    CERN Document Server

    Védrine, P.

    2014-07-17

    The increase of energy in accelerators over the past decades has led to the design of superconducting magnets for both accelerators and the associated detectors. The use of Nb−Ti superconducting materials allows an increase in the dipole field by up to 10 T compared with the maximum field of 2 T in a conventional magnet. The field bending of the particles in the detectors and generated by the magnets can also be increased. New materials, such as Nb$_{3}$Sn and high temperature superconductor (HTS) conductors, can open the way to higher fields, in the range 13–20 T. The latest generations of fusion machines producing hot plasma also use large superconducting magnet systems.

  6. Superconducting super collider

    International Nuclear Information System (INIS)

    Limon, P.J.

    1987-01-01

    The Superconducting Super Collider is to be a 20 TeV per beam proton-proton accelerator and collider. Physically the SCC will be 52 miles in circumference and slightly oval in shape. The use of superconducting magnets instead of conventional cuts the circumference from 180 miles to the 52 miles. The operating cost of the SCC per year is estimated to be about $200-250 million. A detailed cost estimate of the project is roughly $3 billion in 1986 dollars. For the big collider ring, the technical cost are dominated by the magnet system. That is why one must focus on the cost and design of the magnets. Presently, the process of site selection is underway. The major R and D efforts concern superconducting dipoles. The magnets use niobium-titanium as a conductor stabilized in a copper matrix. 10 figures

  7. Crystalline color superconductivity

    International Nuclear Information System (INIS)

    Alford, Mark; Bowers, Jeffrey A.; Rajagopal, Krishna

    2001-01-01

    In any context in which color superconductivity arises in nature, it is likely to involve pairing between species of quarks with differing chemical potentials. For suitable values of the differences between chemical potentials, Cooper pairs with nonzero total momentum are favored, as was first realized by Larkin, Ovchinnikov, Fulde, and Ferrell (LOFF). Condensates of this sort spontaneously break translational and rotational invariance, leading to gaps which vary periodically in a crystalline pattern. Unlike the original LOFF state, these crystalline quark matter condensates include both spin-zero and spin-one Cooper pairs. We explore the range of parameters for which crystalline color superconductivity arises in the QCD phase diagram. If in some shell within the quark matter core of a neutron star (or within a strange quark star) the quark number densities are such that crystalline color superconductivity arises, rotational vortices may be pinned in this shell, making it a locus for glitch phenomena

  8. Large Superconducting Magnet Systems

    Energy Technology Data Exchange (ETDEWEB)

    Védrine, P [Saclay (France)

    2014-07-01

    The increase of energy in accelerators over the past decades has led to the design of superconducting magnets for both accelerators and the associated detectors. The use of Nb−Ti superconducting materials allows an increase in the dipole field by up to 10 T compared with the maximum field of 2 T in a conventional magnet. The field bending of the particles in the detectors and generated by the magnets can also be increased. New materials, such as Nb3Sn and high temperature superconductor (HTS) conductors, can open the way to higher fields, in the range 13–20 T. The latest generations of fusion machines producing hot plasma also use large superconducting magnet systems.

  9. Superconducting current generators

    International Nuclear Information System (INIS)

    Genevey, P.

    1970-01-01

    After a brief summary of the principle of energy storage and liberation with superconducting coils,two current generators are described that create currents in the range 600 to 1400 A, used for two storage experiments of 25 kJ and 50 kJ respectively. The two current generators are: a) a flux pump and b) a superconducting transformer. Both could be developed into more powerful units. The study shows the advantage of the transformer over the flux pump in order to create large currents. The efficiencies of the two generators are 95 per cent and 40 to 60 per cent respectively. (author) [fr

  10. Materials for superconducting cavities

    International Nuclear Information System (INIS)

    Bonin, B.

    1996-01-01

    The ideal material for superconducting cavities should exhibit a high critical temperature, a high critical field, and, above all, a low surface resistance. Unfortunately, these requirements can be conflicting and a compromise has to be found. To date, most superconducting cavities for accelerators are made of niobium. The reasons for this choice are discussed. Thin films of other materials such as NbN, Nb 3 Sn, or even YBCO compounds can also be envisaged and are presently investigated in various laboratories. It is shown that their success will depend critically on the crystalline perfection of these films. (author)

  11. Today's markets for superconductivity

    International Nuclear Information System (INIS)

    Anon.

    1988-01-01

    The worldwide market for superconductive products may exceed $1 billion in 1987. These products are expanding the frontiers of science, revolutionizing the art of medical diagnosis, and developing the energy technology of the future. In general, today's customers for superconductive equipment want the highest possible performance, almost regardless of cost. The products operate within a few degrees of absolute zero, and virtually all are fabricated from niobium or niobium alloys-so far the high-temperature superconductors discovered in 1986 and 1987 have had no impact on these markets. The industry shows potential and profound societal impact, even without the new materials

  12. Gambling with Superconducting Fluctuations

    Science.gov (United States)

    Foltyn, Marek; Zgirski, Maciej

    2015-08-01

    Josephson junctions and superconducting nanowires, when biased close to superconducting critical current, can switch to a nonzero voltage state by thermal or quantum fluctuations. The process is understood as an escape of a Brownian particle from a metastable state. Since this effect is fully stochastic, we propose to use it for generating random numbers. We present protocol for obtaining random numbers and test the experimentally harvested data for their fidelity. Our work is prerequisite for using the Josephson junction as a tool for stochastic (probabilistic) determination of physical parameters such as magnetic flux, temperature, and current.

  13. Superconducting cosmic strings

    International Nuclear Information System (INIS)

    Chudnovsky, E.M.; Field, G.B.; Spergel, D.N.; Vilenkin, A.

    1986-01-01

    Superconducting loops of string formed in the early Universe, if they are relatively light, can be an important source of relativistic particles in the Galaxy. They can be observed as sources of synchrotron radiation at centimeter wavelengths. We propose a string model for two recently discovered radio sources, the ''thread'' in the galactic center and the source G357.7-0.1, and predict that the filaments in these sources should move at relativistic speeds. We also consider superheavy superconducting strings, and the possibility that they be observed as extragalactic radio sources

  14. Superconducting Electronic Film Structures

    Science.gov (United States)

    1991-02-14

    Segmuller, A., Cooper, E.I., Chisholm, M.F., Gupta, A. Shinde, S., and Laibowitz, R.B. Lanthanum gallate substrates for epitaxial high-T superconducting thin...M. F. Chisholm, A. Gupta, S. Shinde, and R. B. Laibowitz, " Lanthanum Gallate Substrates for Epitaxial High-T c Superconducting Thin Films," Appl...G. Forrester and J. Talvacchio, " Lanthanum Copper Oxide Buffer Layers for Growth of High-T c Superconductor Films," Disclosure No. RDS 90-065, filed

  15. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  16. Technology of RF superconductivity

    International Nuclear Information System (INIS)

    Anon.

    1995-01-01

    This work has several parts, two of which are collaborative development projects with the majority of the work being performed at Argonne. The first is the development of a superconducting RFQ structure in collaboration with AccSys Technology Inc. of Pleasanton, California, funded as a Phase II SBIR grant. Another is a collaborative project with the Nuclear Science Centre, New Delhi, India (who are funding the work) to develop new superconducting ion accelerating structures. Other initiatives are developing various aspects of the technology required to utilize ATLAS as a secondary beam linac for radioactive beams

  17. Superconducting magnetic quadrupole

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J.W.; Shepard, K.W.; Nolen, J.A.

    1995-08-01

    A design was developed for a 350 T/m, 2.6-cm clear aperture superconducting quadrupole focussing element for use in a very low q/m superconducting linac as discussed below. The quadrupole incorporates holmium pole tips, and a rectangular-section winding using standard commercially-available Nb-Ti wire. The magnet was modeled numerically using both 2D and 3D codes, as a basis for numerical ray tracing using the quadrupole as a linac element. Components for a prototype singlet are being procured during FY 1995.

  18. Ultra Low Energy Binary Decision Diagram Circuits Using Few Electron Transistors

    Science.gov (United States)

    Saripalli, Vinay; Narayanan, Vijay; Datta, Suman

    Novel medical applications involving embedded sensors, require ultra low energy dissipation with low-to-moderate performance (10kHz-100MHz) driving the conventional MOSFETs into sub-threshold operation regime. In this paper, we present an alternate ultra-low power computing architecture using Binary Decision Diagram based logic circuits implemented using Single Electron Transistors (SETs) operating in the Coulomb blockade regime with very low supply voltages. We evaluate the energy - performance tradeoff metrics of such BDD circuits using time domain Monte Carlo simulations and compare them with the energy-optimized CMOS logic circuits. Simulation results show that the proposed approach achieves better energy-delay characteristics than CMOS realizations.

  19. Operation of a quantum dot in the finite-state machine mode: Single-electron dynamic memory

    Energy Technology Data Exchange (ETDEWEB)

    Klymenko, M. V. [Department of Chemistry, University of Liège, B4000 Liège (Belgium); Klein, M. [The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Levine, R. D. [The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel); Crump Institute for Molecular Imaging and Department of Molecular and Medical Pharmacology, David Geffen School of Medicine and Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095 (United States); Remacle, F., E-mail: fremacle@ulg.ac.be [Department of Chemistry, University of Liège, B4000 Liège (Belgium); The Fritz Haber Center for Molecular Dynamics and the Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel)

    2016-07-14

    A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states corresponds to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.

  20. Operation of a quantum dot in the finite-state machine mode: Single-electron dynamic memory

    International Nuclear Information System (INIS)

    Klymenko, M. V.; Klein, M.; Levine, R. D.; Remacle, F.

    2016-01-01

    A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we model the dynamical response of devices consisting of a charge sensor coupled to either a single and or a double quantum dot subjected to a pulsed gate voltage. We show that transition rates between charge states in metallic quantum dots are characterized by an asymmetry that can be controlled by the gate voltage. This effect is more pronounced when the switching between charge states corresponds to a Markovian process involving electron transport through a chain of several quantum dots. By simulating the dynamics of electron transport we demonstrate that the quantum box operates as a finite-state machine that can be addressed by choosing suitable shapes and switching rates of the gate pulses. We further show that writing times in the ns range and retention memory times six orders of magnitude longer, in the ms range, can be achieved on the double quantum dot system using experimentally feasible parameters, thereby demonstrating that the device can operate as a dynamic single electron memory.

  1. Improvements in or relating to transistor circuits

    International Nuclear Information System (INIS)

    Richards, R.F.; Williamson, P.W.

    1978-01-01

    This invention relates to transistor circuits and in particular to integrated transistor circuits formed on a substrate of semi-conductor material such as silicon. The invention is concerned with providing integrated circuits in which malfunctions caused by the effects of ionising, e.g. nuclear, radiations are reduced. (author)

  2. Ultrasmall transistor-based light sources

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Tavares, Luciana; Kjelstrup-Hansen, Jakob

    Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip.......Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip....

  3. Efficient simulation of power MOS transistors

    NARCIS (Netherlands)

    Ugryumova, M.; Schilders, W.H.A.

    2011-01-01

    In this report we present a few industrial problems related to modeling of MOS transistors. We suggest an efficient algorithm for computing output current at the top ports of power MOS transistors for given voltage excitations. The suggested algorithm exploits the connection between the resistor and

  4. Inhomogeneous superconductivity in a ferromagnet

    International Nuclear Information System (INIS)

    Kontos, T.; Aprili, M.; Lesueur, J.; Genet, F.; Boursier, R.; Grison, X.

    2003-01-01

    We have studied a new superconducting state where the condensate wave function resulting from conventional pairing, is modified by an exchange field. Superconductivity is induced into a ferromagnetic thin film (F) by the proximity effect with a superconducting reservoir (S). We observed oscillations of the superconducting order parameter induced in F as a function of the distance from the S/F interface. They originate from the finite momentum transfer provided to Cooper pairs by the splitting of the spin up and down bands. We measured the superconducting density of states in F by tunneling spectroscopy and the Josephson critical current when F is coupled with a superconducting counter-electrode. Negative values of the superconducting order parameter are revealed by capsized tunneling spectra in F and a negative Josephson coupling (π-junction)

  5. Superconductivity and magnet technology

    International Nuclear Information System (INIS)

    Lubell, M.S.

    1975-01-01

    The background theory of superconducting behavior is reviewed. Three parameters that characterize superconducting materials with values of commercial materials as examples are discussed. More than 1000 compounds and alloy systems and 26 elements are known to exhibit superconducting properties under normal conditions at very low temperatures. A wide variety of crystal structures are represented among the known superconductors. The most important ones do seem to have cubic symmetry such as the body-centered cubic (NbZr and NbTi), face-centered cubic (NbN), and the A15 or β-tungsten structures (Nb 3 Sn), V 3 Ga, Nb 3 Ge, Nb 3 Al, and V 3 Si). Attempts to understand some of the particular phenomena associated with superconductors as a necessary prelude to constructing superconducting magnets are discussed by the author. The origin of degradation is briefly discussed and methods to stabilize magnets are illustrated. The results of Oak Ridge National Laboratory design studies of toroidal magnet systems for fusion reactors are described

  6. High temperature interface superconductivity

    International Nuclear Information System (INIS)

    Gozar, A.; Bozovic, I.

    2016-01-01

    Highlight: • This review article covers the topic of high temperature interface superconductivity. • New materials and techniques used for achieving interface superconductivity are discussed. • We emphasize the role played by the differences in structure and electronic properties at the interface with respect to the bulk of the constituents. - Abstract: High-T_c superconductivity at interfaces has a history of more than a couple of decades. In this review we focus our attention on copper-oxide based heterostructures and multi-layers. We first discuss the technique, atomic layer-by-layer molecular beam epitaxy (ALL-MBE) engineering, that enabled High-T_c Interface Superconductivity (HT-IS), and the challenges associated with the realization of high quality interfaces. Then we turn our attention to the experiments which shed light on the structure and properties of interfacial layers, allowing comparison to those of single-phase films and bulk crystals. Both ‘passive’ hetero-structures as well as surface-induced effects by external gating are discussed. We conclude by comparing HT-IS in cuprates and in other classes of materials, especially Fe-based superconductors, and by examining the grand challenges currently laying ahead for the field.

  7. ISR Superconducting Quadrupoles

    CERN Multimedia

    1977-01-01

    Michel Bouvier is preparing for curing the 6-pole superconducting windings inbedded in the cylindrical wall separating liquid helium from vacuum in the quadrupole aperture. The heat for curing the epoxy glue was provided by a ramp of infrared lamps which can be seen above the slowly rotating cylinder. See also 7703512X, 7702690X.

  8. Forecasting of superconducting compounds

    International Nuclear Information System (INIS)

    Savitskii, E.M.; Gribulya, V.G.; Kiseleva, N.N.

    1981-01-01

    In forecasting new superconducting intermetallic compounds of the A15 and Mo 3 Se types most promising from the viewpoint of high critical temperature Tsub(c), high critical magnetic fields Hsub(c), and high critical currents and in estimating their transition temperature it is proposed to apply cybernetic methods of computer learning

  9. Superconducting Super Collider project

    International Nuclear Information System (INIS)

    Perl, M.L.

    1986-04-01

    The scientific need for the Superconducting Super Collider (SSC) is outlined, along with the history of the development of the SSC concept. A brief technical description is given of each of the main points of the SSC conceptual design. The construction cost and construction schedule are discussed, followed by issues associated with the realization of the SSC. 8 refs., 3 figs., 3 tabs

  10. Checking BEBC superconducting magnet

    CERN Multimedia

    CERN PhotoLab

    1974-01-01

    The superconducting coils of the magnet for the 3.7 m Big European Bubble Chamber (BEBC) had to be checked, see Annual Report 1974, p. 60. The photo shows a dismantled pancake. By December 1974 the magnet reached again the field design value of 3.5 T.

  11. Niobium superconducting cavity

    CERN Multimedia

    CERN PhotoLab

    1980-01-01

    This 5-cell superconducting cavity, made from bulk-Nb, stems from the period of general studies, not all directed towards direct use at LEP. This one is dimensioned for 1.5 GHz, the frequency used at CEBAF and also studied at Saclay (LEP RF was 352.2 MHz). See also 7908227, 8007354, 8209255, 8210054, 8312339.

  12. Superconducting magnets 1992

    International Nuclear Information System (INIS)

    1993-06-01

    This report discusses the following topics on Superconducting Magnets; SSC Magnet Industrialization; Collider Quadrupole Development; A Record-Setting Magnet; D20: The Push Beyond 10T; Nonaccelerator Applications; APC Materials Development; High-T c at Low Temperature; Cable and Cabling-Machine Development; and Analytical Magnet Design

  13. LHC superconducting strand

    CERN Multimedia

    Patrice Loiez

    1999-01-01

    This cross-section through a strand of superconducting matieral as used in the LHC shows the 8000 Niobium-Titanium filaments embedded like a honeycomb in copper. When cooled to 1.9 degrees above absolute zero in the LHC accelerator, these filaments will have zero resistance and so will carry a high electric current with no energy loss.

  14. Electrical Conduction and Superconductivity

    Indian Academy of Sciences (India)

    When an electric field is applied, this electron can be lifted to this higher energy ... By such a virtual process two electrons .... using superconducting coils has come to be a reality. ... nance imaging techniques used in medical diagnostics. Com ...

  15. Superconducting magnets for HERA

    International Nuclear Information System (INIS)

    Wolff, S.

    1987-01-01

    The Hadron-Electron-Ring Accelerator (HERA) presently under construction at DESY, Hamburg, consists of an electron storage ring of 30 GeV and a proton storage ring of 820 GeV. Superconducting magnets are used for the proton ring. There are 416 superconducting bending magnets of 4.698 T central field and 8.824 m magnetic length, 224 superconducting quadrupoles of 91.2 T/m central gradient and many superconducting correction dipoles, quadrupoles and sextupoles. The main dipoles and quadrupoles consist of two-layer coils of 75 mm inner diameter clammed with aluminium (for the dipoles) or stainless steel laminations (for the quadrupoles). The collared coils are surrounded by a laminated cold iron yoke and supported inside a low loss cryostat. The protection system uses cold diodes to bypass the current around a quenching magnet. The magnets are cooled with one phase helium supplied by a 3 block central refrigeration system of 20 kW refrigeration power at 4.3 K. Two helium is returned through the magnets in good thermal contact with the one phase helium in the dipoles for temperature control. This paper describes the magnet system and gives the results obtained for prototype magnets

  16. LEP superconducting cavity

    CERN Multimedia

    1995-01-01

    Engineers work in a clean room on one of the superconducting cavities for the upgrade to the LEP accelerator, known as LEP-2. The use of superconductors allow higher electric fields to be produced so that higher beam energies can be reached.

  17. Gossamer superconductivity, new paradigm?

    Energy Technology Data Exchange (ETDEWEB)

    Won, Hyekyung [Department of Physics, Hallym University, Chuncheon 200-702 (Korea); Haas, Stephan; Parker, David [Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089-0484 (United States); Maki, Kazumi [Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089-0484 (United States); Max-Planck Institute for the Physics of Complex Systems, Noethnitzer Str. 38, 01187 Dresden (Germany); Dora, Balazs [Department of Physics, Budapest University of Technology and Economics, 1521 Budapest (Hungary); Virosztek, Attila [Department of Physics, Budapest University of Technology and Economics, 1521 Budapest (Hungary); Research Institute for Solid State Physics and Optics, P.O. Box 49, 1525 Budapest (Hungary)

    2006-01-01

    We review our recent works on d-wave density wave (dDW) and gossamer superconductivity (i.e. d-wave superconductivity in the presence of dDW) in high-T{sub c} cuprates and CeCoIn{sub 5}. a) We show that both the giant Nernst effect and the angle dependent magnetoresistance (ADMR) in the pseudogap phases of the cuprates and CeCoIn{sub 5} are manifestations of dDW. b) The phase diagram of high-T{sub c} cuprates is understood in terms of mean field theory, which includes two order parameters {delta}{sub 1} and {delta}{sub 2}, where one order paremeter is from dDW and the other from d-wave superconductivity. c) In the optimally to the overdoped region we find the spatially periodic dDW, an analogue of the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, becomes more stable. d) In the underdoped region where {delta}{sub 2}/{delta}{sub 1}<<1 the Uemera relation is obtained within the present model. We speculate that the gossamer superconductivity is at the heart of high-T{sub c} cuprate superconductors, the heavy-fermion superconductor CeCoIn{sub 5} and the organic superconductors {kappa}-(ET){sub 2}Cu(NCS){sub 2} and (TMTSF){sub 2}PF{sub 6}. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Superconductivity : Controlling magnetism

    NARCIS (Netherlands)

    Golubov, Alexandre Avraamovitch; Kupriyanov, Mikhail Yu.

    Manipulation of the magnetic state in spin valve structures by superconductivity has now been achieved, opening a new route for the development of ultra-fast cryogenic memories. Spintronics is a rapidly developing field that allows insight into fundamental spin-dependent physical properties and the

  19. High-temperature superconductivity

    International Nuclear Information System (INIS)

    Lynn, J.W.

    1990-01-01

    This book discusses development in oxide materials with high superconducting transition temperature. Systems with Tc well above liquid nitrogen temperature are already a reality and higher Tc's are anticipated. The author discusses how the idea of a room-temperature superconductor appears to be a distinctly possible outcome of materials research

  20. Magnetic levitation and superconductivity

    International Nuclear Information System (INIS)

    Albrecht, C.

    1989-01-01

    The paper explains the impressive advances made in the development of superconducting magnets, in cryogenic engineering, and in the development of drive and vehicle concepts in Japan in the period following termination of West German development work for the electrodynamical system (MLU 001, MLU 002). The potentials engineering due to the development of high-Tc superconductors are discussed. (orig./MM) [de

  1. AC/RF Superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Ciovati, G [Jefferson Lab (United States)

    2014-07-01

    This contribution provides a brief introduction to AC/RF superconductivity, with an emphasis on application to accelerators. The topics covered include the surface impedance of normal conductors and superconductors, the residual resistance, the field dependence of the surface resistance, and the superheating field.

  2. AC/RF Superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Ciovati, Gianluigi [JLAB

    2015-02-01

    This contribution provides a brief introduction to AC/RF superconductivity, with an emphasis on application to accelerators. The topics covered include the surface impedance of normal conductors and superconductors, the residual resistance, the field dependence of the surface resistance, and the superheating field.

  3. High-Performance Vertical Organic Electrochemical Transistors.

    Science.gov (United States)

    Donahue, Mary J; Williamson, Adam; Strakosas, Xenofon; Friedlein, Jacob T; McLeod, Robert R; Gleskova, Helena; Malliaras, George G

    2018-02-01

    Organic electrochemical transistors (OECTs) are promising transducers for biointerfacing due to their high transconductance, biocompatibility, and availability in a variety of form factors. Most OECTs reported to date, however, utilize rather large channels, limiting the transistor performance and resulting in a low transistor density. This is typically a consequence of limitations associated with traditional fabrication methods and with 2D substrates. Here, the fabrication and characterization of OECTs with vertically stacked contacts, which overcome these limitations, is reported. The resulting vertical transistors exhibit a reduced footprint, increased intrinsic transconductance of up to 57 mS, and a geometry-normalized transconductance of 814 S m -1 . The fabrication process is straightforward and compatible with sensitive organic materials, and allows exceptional control over the transistor channel length. This novel 3D fabrication method is particularly suited for applications where high density is needed, such as in implantable devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Universal power transistor base drive control unit

    Science.gov (United States)

    Gale, Allan R.; Gritter, David J.

    1988-01-01

    A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

  5. Report on the results of research and development under a consignment from NEDO on deca-nano quantum integrating transistor substrate technologies; 1997 nendo sangyo kagaku gijutsu kenkyu kaihatsu jigyo Shin energy Sangyo Gijutsu Sogo Kaihatsu Kiko itaku. Deca-nano ryoshi shusekika soshi kiban gijutsu no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Researches have been conducted on deca-nano quantum integrating transistor substrate technologies, and developments were made on a three-dimensional device simulator which can be used in deca-nano domains, and a circuit simulator to have quantifying function transistors coexist with silicon semiconductor integrated circuits. The researches were intended to develop a simulator capable of analyzing properties of very small silicon and compound semiconductor devices in deca-nano domains. The researches discussed the applicability of conventional simulators, calculated quantum levels in a three-dimensional hetero structure, and resulted in development of an electron wave propagation simulator in optional two-dimensional shapes, a quantum Monte Carlo simulator, and a three-dimensional semiconductor device simulator with quantum correction. On the other hand, in order to estimate characteristics of a hybrid circuit in which single electron transistors coexist with conventional transistors such as CMOS transistors, a single electron hybrid circuit simulator was developed. The development indicated that a CMOS-SET fused memory is promising as a future LSI memory. 22 refs., 116 figs., 3 tabs.

  6. The analysis of single-electron orbits in a free electron laser based upon a rectangular hybrid wiggler

    International Nuclear Information System (INIS)

    Kordbacheh, A.; Ghahremaninezhad, Roghayeh; Maraghechi, B.

    2012-01-01

    A three-dimensional analysis of a novel free-electron laser (FEL) based upon a rectangular hybrid wiggler (RHW) is presented. This RHW is designed in a configuration composed of rectangular rings with alternating ferrite and dielectric spacers immersed in a solenoidal magnetic field. An analytic model of RHW is introduced by solution of Laplace's equation for the magnetostatic fields under the appropriate boundary conditions. The single-electron orbits in combined RHW and axial guide magnetic fields are studied when only the first and the third spatial harmonic components of the RHW field are taken into account and the higher order terms are ignored. The results indicate that the third spatial harmonic leads to group III orbits with a strong negative mass regime particularly in large solenoidal magnetic fields. RHW is found to be a promising candidate with favorable characteristics to be used in microwave FEL.

  7. Compact femtosecond electron diffractometer with 100 keV electron bunches approaching the single-electron pulse duration limit

    International Nuclear Information System (INIS)

    Waldecker, Lutz; Bertoni, Roman; Ernstorfer, Ralph

    2015-01-01

    We present the design and implementation of a highly compact femtosecond electron diffractometer working at electron energies up to 100 keV. We use a multi-body particle tracing code to simulate electron bunch propagation through the setup and to calculate pulse durations at the sample position. Our simulations show that electron bunches containing few thousands of electrons per bunch are only weakly broadened by space-charge effects and their pulse duration is thus close to the one of a single-electron wavepacket. With our compact setup, we can create electron bunches containing up to 5000 electrons with a pulse duration below 100 fs on the sample. We use the diffractometer to track the energy transfer from photoexcited electrons to the lattice in a thin film of titanium. This process takes place on the timescale of few-hundred femtoseconds and a fully equilibrated state is reached within 1 ps

  8. The analysis of single-electron orbits in a free electron laser based upon a rectangular hybrid wiggler

    Science.gov (United States)

    Kordbacheh, A.; Ghahremaninezhad, Roghayeh; Maraghechi, B.

    2012-09-01

    A three-dimensional analysis of a novel free-electron laser (FEL) based upon a rectangular hybrid wiggler (RHW) is presented. This RHW is designed in a configuration composed of rectangular rings with alternating ferrite and dielectric spacers immersed in a solenoidal magnetic field. An analytic model of RHW is introduced by solution of Laplace's equation for the magnetostatic fields under the appropriate boundary conditions. The single-electron orbits in combined RHW and axial guide magnetic fields are studied when only the first and the third spatial harmonic components of the RHW field are taken into account and the higher order terms are ignored. The results indicate that the third spatial harmonic leads to group III orbits with a strong negative mass regime particularly in large solenoidal magnetic fields. RHW is found to be a promising candidate with favorable characteristics to be used in microwave FEL.

  9. A high-gain, low ion-backflow double micro-mesh gaseous structure for single electron detection

    Science.gov (United States)

    Zhang, Zhiyong; Qi, Binbin; Liu, Chengming; Feng, Jianxin; Liu, Jianbei; Shao, Ming; Zhou, Yi; Hong, Daojin; Lv, You; Song, Guofeng; Wang, Xu; You, Wenhao

    2018-05-01

    Application of micro-pattern gaseous detectors to gaseous photomultiplier tubes has been widely investigated over the past two decades. In this paper, we present a double micro-mesh gaseous structure that has been designed and fabricated for this application. Tests with X-rays and UV laser light indicate that this structure exhibits an excellent gas gain of > 7 × 104 and good energy resolution of 19% (full width at half maximum) for 5.9 keV X-rays. The gas gain can reach up to 106 for single electrons while maintaining a very low ion-backflow ratio down to 0.0005. This structure has good potential for other applications requiring a very low level of ion backflow.

  10. Optomechanical transistor with mechanical gain

    Science.gov (United States)

    Zhang, X. Z.; Tian, Lin; Li, Yong

    2018-04-01

    We study an optomechanical transistor, where an input field can be transferred and amplified unidirectionally in a cyclic three-mode optomechanical system. In this system, the mechanical resonator is coupled simultaneously to two cavity modes. We show that it only requires a finite mechanical gain to achieve the nonreciprocal amplification. Here the nonreciprocity is caused by the phase difference between the linearized optomechanical couplings that breaks the time-reversal symmetry of this system. The amplification arises from the mechanical gain, which provides an effective phonon bath that pumps the mechanical mode coherently. This effect is analogous to the stimulated emission of atoms, where the probe field can be amplified when its frequency is in resonance with that of the anti-Stokes transition. We show that by choosing optimal parameters, this optomechanical transistor can reach perfect unidirectionality accompanied with strong amplification. In addition, the presence of the mechanical gain can result in ultralong delay in the phase of the probe field, which provides an alternative to controlling light transport in optomechanical systems.

  11. High-performance vertical organic transistors.

    Science.gov (United States)

    Kleemann, Hans; Günther, Alrun A; Leo, Karl; Lüssem, Björn

    2013-11-11

    Vertical organic thin-film transistors (VOTFTs) are promising devices to overcome the transconductance and cut-off frequency restrictions of horizontal organic thin-film transistors. The basic physical mechanisms of VOTFT operation, however, are not well understood and VOTFTs often require complex patterning techniques using self-assembly processes which impedes a future large-area production. In this contribution, high-performance vertical organic transistors comprising pentacene for p-type operation and C60 for n-type operation are presented. The static current-voltage behavior as well as the fundamental scaling laws of such transistors are studied, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers. The transistors are manufactured by photolithography, in contrast to other VOTFT concepts using self-assembled source electrodes. Fluorinated photoresist and solvent compounds allow for photolithographical patterning directly and strongly onto the organic materials, simplifying the fabrication protocol and making VOTFTs a prospective candidate for future high-performance applications of organic transistors. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Colour tuneable light-emitting transistor

    Energy Technology Data Exchange (ETDEWEB)

    Feldmeier, Eva J.; Melzer, Christian; Seggern, Heinz von [Electronic Materials Department, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

    2010-07-01

    In recent years the interest in ambipolar organic light-emitting field-effect transistors has increased steadily as the devices combine switching behaviour of transistors with light emission. Usually, small molecules and polymers with a band gap in the visible spectral range serve as semiconducting materials. Mandatory remain balanced injection and transport properties for both charge carrier types to provide full control of the spatial position of the recombination zone of electrons and holes in the transistor channel via the applied voltages. As will be presented here, the spatial control of the recombination zone opens new possibilities towards light-emitting devices with colour tuneable emission. In our contribution an organic light-emitting field-effect transistors is presented whose emission colour can be changed by the applied voltages. The organic top-contact field-effect transistor is based on a parallel layer stack of acenes serving as organic transport and emission layers. The transistor displays ambipolar characteristics with a narrow recombination zone within the transistor channel. During operation the recombination zone can be moved by a proper change in the drain and gate bias from one organic semiconductor layer to another one inducing a change in the emission colour. In the presented example the emission maxima can be switched from 530 nm to 580 nm.

  13. 2017 Gordon Conference on Superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Chubukov, Andrey [Univ. of Minnesota, Twin Cities, MN (United States)

    2017-11-14

    The DOE award was for a 2017 Gordon Research conference on Superconductivity (GRC). The objective of GRC is to interchange the information about the latest theoretical and experimental developments in the area of superconductivity and to select most perspective directions for future research in this area.The goal of the Gordon Conference on Superconductivity is to present and discuss the latest results in the field of modern superconductivity, discuss new ideas and new directions of research in the area. It is a long-standing tradition of the Gordon conference on Superconductivity that the vast majority of participants are junior scientists. Funding for the conference would primarily be used to support junior researchers, particularly from under-represented groups. We had more 10 female speakers, some of them junior researchers, and some funding was used to support these speakers. The conference was held together with Gordon Research Seminar on Superconductivity, where almost all speakers and participants were junior scientists.

  14. Vector superconductivity in cosmic strings

    International Nuclear Information System (INIS)

    Dvali, G.R.; Mahajan, S.M.

    1992-03-01

    We argue that in most realistic cases, the usual Witten-type bosonic superconductivity of the cosmic string is automatically (independent of the existence of superconducting currents) accompanied by the condensation of charged gauge vector bosons in the core giving rise to a new vector type superconductivity. The value of the charged vector condensate is related with the charged scalar expectation value, and vanishes only if the latter goes to zero. The mechanism for the proposed vector superconductivity, differing fundamentally from those in the literature, is delineated using the simplest realistic example of the two Higgs doublet standard model interacting with the extra cosmic string. It is shown that for a wide range of parameters, for which the string becomes scalarly superconducting, W boson condensates (the sources of vector superconductivity) are necessarily excited. (author). 14 refs

  15. Superconducting Accelerator Magnets

    CERN Document Server

    Mess, K H; Wolff, S

    1996-01-01

    The main topic of the book are the superconducting dipole and quadrupole magnets needed in high-energy accelerators and storage rings for protons, antiprotons or heavy ions. The basic principles of low-temperature superconductivity are outlined with special emphasis on the effects which are relevant for accelerator magnets. Properties and fabrication methods of practical superconductors are described. Analytical methods for field calculation and multipole expansion are presented for coils without and with iron yoke. The effect of yoke saturation and geometric distortions on field quality is studied. Persistent magnetization currents in the superconductor and eddy currents the copper part of the cable are analyzed in detail and their influence on field quality and magnet performance is investigated. Superconductor stability, quench origins and propagation and magnet protection are addressed. Some important concepts of accelerator physics are introduced which are needed to appreciate the demanding requirements ...

  16. Infrared Quenched Photoinduced Superconductivity

    Science.gov (United States)

    Federici, J. F.; Chew, D.; Guttierez-Solana, J.; Molina, G.; Savin, W.; Wilber, W.

    1996-03-01

    Persistant photoconductivity (PPC) and photoinduced superconductivity (PISC) in oxygen deficient YBa_2Cu_3O_6+x have received recent attention. It has been suggested that oxygen vacancy defects play an important role in the PISC/PPC mechanism.(J. F. Federici, D. Chew, B. Welker, W. Savin, J. Gutierrez-Solana, and T. Fink, Phys. Rev. B), December 1995 Supported by National Science Foundation In this model, defects trap photogenerated electrons so that electron-hole recombination can not occur thereby allowing photogenerated holes to contribute to the carrier density. Nominally, the photoinduced state is long-lived, persisting for days at low temperature. Experiment results will be presented demonstrating that the photoinduced superconductivity state can be quenched using infrared radiation. Implications for the validity of the PISC/PCC defect model will be discussed.

  17. Superconductivity an introduction

    CERN Document Server

    Kleiner, Reinhold

    2016-01-01

    The third edition of this proven text has been developed further in both scope and scale to reflect the potential for superconductivity in power engineering to increase efficiency in electricity transmission or engines. The landmark reference remains a comprehensive introduction to the field, covering every aspect from fundamentals to applications, and presenting the latest developments in organic superconductors, superconducting interfaces, quantum coherence, and applications in medicine and industry. Due to its precise language and numerous explanatory illustrations, it is suitable as an introductory textbook, with the level rising smoothly from chapter to chapter, such that readers can build on their newly acquired knowledge. The authors cover basic properties of superconductors and discuss stability and different material groups with reference to the latest and most promising applications, devoting the last third of the book to applications in power engineering, medicine, and low temperature physics. An e...

  18. Variable temperature superconducting microscope

    Science.gov (United States)

    Cheng, Bo; Yeh, W. J.

    2000-03-01

    We have developed and tested a promising type of superconducting quantum interference device (SQUID) microscope, which can be used to detect vortex motion and can operate in magnetic fields over a large temperature range. The system utilizes a single-loop coupling transformer, consisting of a patterned high Tc superconducting thin film. At one end of the transformer, a 20 μm diam detecting loop is placed close to the sample. At the other end, a large loop is coupled to a NbTi coil, which is connected to a low Tc SQUID sensor. Transformers in a variety of sizes have been tested and calibrated. The results show that the system is capable of detecting the motion of a single vortex. We have used the microscope to study the behavior of moving vortices at various positions in a YBa2Cu3O7 thin film bridge.

  19. Superconducting energy store

    International Nuclear Information System (INIS)

    Elsel, W.

    1986-01-01

    The advantages obtained by the energy store device according to the invention with a superconducting solenoid system consist of the fact that only relatively short superconducting forward and return leads are required, which are collected into cables as far as possible. This limits the coolant losses of the cables. Only one relatively expensive connecting part with a transition of its conductors from room temperature to a low temperature is required, which, like the normal conducting current switch, is easily accessible. As the continuation has to be cooled independently of the upper part solenoid, cooling of this continuation part can prevent the introduction of large quantities of heat into the connected part solenoid. Due to the cooling of the forward and return conductors of the connecting cable with the coolant of the lower part solenoid, there are relatively few separations between the coolant spaces of the part solenoids. (orig./MM) [de

  20. Statistical mechanics of superconductivity

    CERN Document Server

    Kita, Takafumi

    2015-01-01

    This book provides a theoretical, step-by-step comprehensive explanation of superconductivity for undergraduate and graduate students who have completed elementary courses on thermodynamics and quantum mechanics. To this end, it adopts the unique approach of starting with the statistical mechanics of quantum ideal gases and successively adding and clarifying elements and techniques indispensible for understanding it. They include the spin-statistics theorem, second quantization, density matrices, the Bloch–De Dominicis theorem, the variational principle in statistical mechanics, attractive interaction, and bound states. Ample examples of their usage are also provided in terms of topics from advanced statistical mechanics such as two-particle correlations of quantum ideal gases, derivation of the Hartree–Fock equations, and Landau’s Fermi-liquid theory, among others. With these preliminaries, the fundamental mean-field equations of superconductivity are derived with maximum mathematical clarity based on ...

  1. Superconductivity in Chevrel phases

    International Nuclear Information System (INIS)

    Fischer, O.; Seeber, B.

    1979-01-01

    In the last years several ternary superconductors have been discovered, which possess unusual physical properties. Among them the molybdenum chalcogenides, which are often called Chevrel phases, have a special position. Some of these compounds have very high critical fields, which is of special interest for a technical application. In these substances the coexistence of magnetic ordering and superconductivity has been found for the first time, too. Recently it has become possible to prepare new compounds, which are interesting for superconductivity, by the appropriate coalescence of Mo 6 clusters. In the case of Tl 2 Mo 6 Se 6 (Tsub(c) = 3K) this development leads to a quasi-one-dimensional metallic system. (orig.)

  2. Metastable superconducting alloys

    International Nuclear Information System (INIS)

    Johnson, W.L.

    1978-07-01

    The study of metastable metals and alloys has become one of the principal activities of specialists working in the field of superconducting materials. Metastable crystalline superconductors such as the A15-type materials have been given much attention. Non-crystalline superconductors were first studied over twenty years ago by Buckel and Hilsch using the technique of thin film evaporation on a cryogenic substrate. More recently, melt-quenching, sputtering, and ion implantation techniques have been employed to produce a variety of amorphous superconductors. The present article presents a brief review of experimental results and a survey of current work on these materials. The systematics of superconductivity in non-crystalline metals and alloys are described along with an analysis of the microscopic parameters which underlie the observed trends. The unique properties of these superconductors which arise from the high degree of structural disorder in the amorphous state are emphasized

  3. Superconducting frustration bit

    International Nuclear Information System (INIS)

    Tanaka, Y.

    2014-01-01

    Highlights: • A frustration bit element is proposed for a conventional superconducting circuit. • It is composed of π-junctions. • It mimics the multiband superconductor. - Abstract: A basic design is proposed for a classical bit element of a superconducting circuit that mimics a frustrated multiband superconductor and is composed of an array of π-Josephson junctions (π-junction). The phase shift of π provides the lowest energy for one π-junction, but neither a π nor a zero phase shift gives the lowest energy for an assembly of π-junctions. There are two chiral states that can be used to store one bit information. The energy scale for reading and writing to memory is of the same order as the junction energy, and is thus in the same order of the driving energy of the circuit. In addition, random access is also possible

  4. Superconductivity and spin fluctuations

    International Nuclear Information System (INIS)

    Scalapino, D.J.

    1999-01-01

    The organizers of the Memorial Session for Herman Rietschel asked that the author review some of the history of the interplay of superconductivity and spin fluctuations. Initially, Berk and Schrieffer showed how paramagnon spin fluctuations could suppress superconductivity in nearly-ferromagnetic materials. Following this, Rietschel and various co-workers wrote a number of papers in which they investigated the role of spin fluctuations in reducing the Tc of various electron-phonon superconductors. Paramagnon spin fluctuations are also believed to provide the p-wave pairing mechanism responsible for the superfluid phases of 3 He. More recently, antiferromagnetic spin fluctuations have been proposed as the mechanism for d-wave pairing in the heavy-fermion superconductors and in some organic materials as well as possibly the high-Tc cuprates. Here the author will review some of this early history and discuss some of the things he has learned more recently from numerical simulations

  5. European roadmap on superconductive electronics - status and perspectives

    Science.gov (United States)

    Anders, S.; Blamire, M. G.; Buchholz, F.-Im.; Crété, D.-G.; Cristiano, R.; Febvre, P.; Fritzsch, L.; Herr, A.; Il'ichev, E.; Kohlmann, J.; Kunert, J.; Meyer, H.-G.; Niemeyer, J.; Ortlepp, T.; Rogalla, H.; Schurig, T.; Siegel, M.; Stolz, R.; Tarte, E.; ter Brake, H. J. M.; Toepfer, H.; Villegier, J.-C.; Zagoskin, A. M.; Zorin, A. B.

    2010-12-01

    Executive SummaryFor four decades semiconductor electronics has followed Moore’s law: with each generation of integration the circuit features became smaller, more complex and faster. This development is now reaching a wall so that smaller is no longer any faster. The clock rate has saturated at about 3-5 GHz and the parallel processor approach will soon reach its limit. The prime reason for the limitation the semiconductor electronics experiences is not the switching speed of the individual transistor, but its power dissipation and thus heat. Digital superconductive electronics is a circuit- and device-technology that is inherently faster at much less power dissipation than semiconductor electronics. It makes use of superconductors and Josephson junctions as circuit elements, which can provide extremely fast digital devices in a frequency range - dependent on the material - of hundreds of GHz: for example a flip-flop has been demonstrated that operated at 750 GHz. This digital technique is scalable and follows similar design rules as semiconductor devices. Its very low power dissipation of only 0.1 μW per gate at 100 GHz opens the possibility of three-dimensional integration. Circuits like microprocessors and analogue-to-digital converters for commercial and military applications have been demonstrated. In contrast to semiconductor circuits, the operation of superconducting circuits is based on naturally standardized digital pulses the area of which is exactly the flux quantum Φ0. The flux quantum is also the natural quantization unit for digital-to-analogue and analogue-to-digital converters. The latter application is so precise, that it is being used as voltage standard and that the physical unit ‘Volt’ is defined by means of this standard. Apart from its outstanding features for digital electronics, superconductive electronics provides also the most sensitive sensor for magnetic fields: the Superconducting Quantum Interference Device (SQUID). Amongst

  6. European roadmap on superconductive electronics - status and perspectives

    International Nuclear Information System (INIS)

    Anders, S.; Blamire, M.G.; Buchholz, F.-Im.; Crete, D.-G.; Cristiano, R.; Febvre, P.; Fritzsch, L.; Herr, A.; Il'ichev, E.; Kohlmann, J.; Kunert, J.; Meyer, H.-G.; Niemeyer, J.; Ortlepp, T.; Rogalla, H.; Schurig, T.

    2010-01-01

    Executive Summary: For four decades semiconductor electronics has followed Moore's law: with each generation of integration the circuit features became smaller, more complex and faster. This development is now reaching a wall so that smaller is no longer any faster. The clock rate has saturated at about 3-5 GHz and the parallel processor approach will soon reach its limit. The prime reason for the limitation the semiconductor electronics experiences is not the switching speed of the individual transistor, but its power dissipation and thus heat. Digital superconductive electronics is a circuit- and device-technology that is inherently faster at much less power dissipation than semiconductor electronics. It makes use of superconductors and Josephson junctions as circuit elements, which can provide extremely fast digital devices in a frequency range - dependent on the material - of hundreds of GHz: for example a flip-flop has been demonstrated that operated at 750 GHz. This digital technique is scalable and follows similar design rules as semiconductor devices. Its very low power dissipation of only 0.1 μW per gate at 100 GHz opens the possibility of three-dimensional integration. Circuits like microprocessors and analogue-to-digital converters for commercial and military applications have been demonstrated. In contrast to semiconductor circuits, the operation of superconducting circuits is based on naturally standardized digital pulses the area of which is exactly the flux quantum Φ 0 . The flux quantum is also the natural quantization unit for digital-to-analogue and analogue-to-digital converters. The latter application is so precise, that it is being used as voltage standard and that the physical unit 'Volt' is defined by means of this standard. Apart from its outstanding features for digital electronics, superconductive electronics provides also the most sensitive sensor for magnetic fields: the Superconducting Quantum Interference Device (SQUID). Amongst many

  7. Stabilized superconducting materials and fabrication process

    International Nuclear Information System (INIS)

    Chevallier, B.; Dance, J.M.; Etourneau, J.; Lozano, L.; Tressaud, A.; Tournier, R.; Sulpice, A.; Chaussy, J.; Lejay, P.

    1989-01-01

    Superconducting ceramics are fluorinated at a temperature ≤ 120 0 C. Are also claimed new superconducting materials with a fluorine concentration gradient decreasing from the surface to the core. Superconductivity is stabilized and/or improved [fr

  8. Superconductivity in MgB{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Muranaka, Takahiro; Akimitsu, Jun [Aoyama Gakuin Univ., Kanagawa (Japan). Dept. of Physics and Mathematics

    2011-07-01

    We review superconductivity in MgB{sub 2} in terms of crystal and electronic structure, electron-phonon coupling, two-gap superconductivity and application. Finally, we introduce the development of new superconducting materials in related compounds. (orig.)

  9. Topological confinement and superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Al-hassanieh, Dhaled A [Los Alamos National Laboratory; Batista, Cristian D [Los Alamos National Laboratory

    2008-01-01

    We derive a Kondo Lattice model with a correlated conduction band from a two-band Hubbard Hamiltonian. This mapping allows us to describe the emergence of a robust pairing mechanism in a model that only contains repulsive interactions. The mechanism is due to topological confinement and results from the interplay between antiferromagnetism and delocalization. By using Density-Matrix-Renormalization-Group (DMRG) we demonstrate that this mechanism leads to dominant superconducting correlations in aID-system.

  10. Unconventional superconductivity near inhomogeneities

    International Nuclear Information System (INIS)

    Poenicke, A.F.

    2008-01-01

    After the presentation of a quasi-classical theory the specific heat of Sr 2 RuO 4 is considered. Then tunneling spectroscopy on cuprate superconductors is discussed. Thereafter the subharmonic gap structure in d-wave superconductors is considered. Finally the application of the S-matrix in superconductivity is discussed with spin mixing, CrO 2 as example, and an interface model. (HSI)

  11. Unconventional superconductivity near inhomogeneities

    Energy Technology Data Exchange (ETDEWEB)

    Poenicke, A F

    2008-01-25

    After the presentation of a quasi-classical theory the specific heat of Sr{sub 2}RuO{sub 4} is considered. Then tunneling spectroscopy on cuprate superconductors is discussed. Thereafter the subharmonic gap structure in d-wave superconductors is considered. Finally the application of the S-matrix in superconductivity is discussed with spin mixing, CrO{sub 2} as example, and an interface model. (HSI)

  12. Superconduction at 77 K

    International Nuclear Information System (INIS)

    Mueller, H.G.

    1989-01-01

    This general paper deals with the advantages which may result from the use of ceramic high-temperature superconductors. The use of these new superconductors for generators and electric motors for ship propulsion is regarded as a promising potential defense application. Furthermore, SMES (Superconducting Magnetic Energy Storage) can be used as a 'power compressor' for future high-performance weapon systems such as electromagnetic cannons, high-energy lasers, and high power microwaves. (MM) [de

  13. Advanced superconducting materials

    International Nuclear Information System (INIS)

    Fluekiger, R.

    1983-11-01

    The superconducting properties of various materials are reviewed in view of their use in high field magnets. The critical current densities above 12 T of conductors based on NbN or PbMo 6 S 8 are compared to those of the most advanced practical conductors based on alloyed by Nb 3 Sn. Different aspects of the mechanical reinforcement of high field conductors, rendered necessary by the strong Lorentz forces (e.g. in fusion magnets), are discussed. (orig.) [de

  14. Superconducting magnet wire

    Science.gov (United States)

    Schuller, Ivan K.; Ketterson, John B.; Banerjee, Indrajit

    1986-01-01

    A superconducting tape or wire with an improved critical field is formed of alternating layers of a niobium-containing superconductor such as Nb, NbTi, Nb.sub.3 Sn or Nb.sub.3 Ge with a thickness in the range of about 0.5-1.5 times its coherence length, supported and separated by layers of copper with each copper layer having a thickness in the range of about 170-600 .ANG..

  15. Superconductivity in power engineering

    International Nuclear Information System (INIS)

    Chaddah, P.; Dande, Y.D.; Dasannacharya, B.A.; Malik, M.K.; Raghavan, R.V.

    1987-01-01

    The advantages of low power loss, high magnetic fields and compactness of size of superconducting magnets have generated world-wide interest in using them for MHD generators, Tokamak fusion reactors, energy storage systems etc. With a view to assess the feasibility of using the technology in power engineering in India, the status of the efforts in the country is reviewed and the areas of R and D required are indicated. 13 figures, 15 refs. (author)

  16. Superconducting linear colliders

    International Nuclear Information System (INIS)

    Anon.

    1990-01-01

    The advantages of superconducting radiofrequency (SRF) for particle accelerators have been demonstrated by successful operation of systems in the TRISTAN and LEP electron-positron collider rings respectively at the Japanese KEK Laboratory and at CERN. If performance continues to improve and costs can be lowered, this would open an attractive option for a high luminosity TeV (1000 GeV) linear collider

  17. Superconducting Ferromagnetic Nanodiamond

    Czech Academy of Sciences Publication Activity Database

    Zhang, G.; Samuely, T.; Xu, Z.; Jochum, J. K.; Volodin, A.; Zhou, S. Q.; May, P. W.; Onufriienko, O.; Kacmarik, J.; Steele, J. A.; Li, J.; Vanacken, J.; Vacík, Jiří; Szabo, P.; Yuan, H. F.; Roeffaers, M. B. J.; Cerbu, D.; Samuely, P.; Hofkens, J.; Moshchalkov, V.V.

    2017-01-01

    Roč. 11, č. 6 (2017), s. 5358-5366 ISSN 1936-0851 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : nanodiamond * superconductivity and ferromagnetism * spin fluctuations * giant positive magnetoresistance * anamalous Hall effect Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nano-materials (production and properties ) Impact factor: 13.942, year: 2016

  18. Superconducting cavities for HERA

    International Nuclear Information System (INIS)

    Dwersteg, B.; Ebeling, W.; Moeller, W.D.; Renken, D.; Proch, D.; Sekutowicz, J.; Susta, J.; Tong, D.

    1988-01-01

    Superconducting 500 MHz cavities are developed to demonstrate the feasibility of upgrading the e-beam energy of the HERA storage ring. A prototype module with 2 x 4 cell resonators and appropriate fundamental and higher mode couplers has been designed at DESY and is being built by industrial firms. The design and results of RF and cryogenic measurements are reported in detail. 17 references, 10 figures, 2 tables

  19. Superconductivity is pair work

    International Nuclear Information System (INIS)

    Wengenmayr, Roland

    2011-01-01

    Electric cables that routinely conduct electricity without loss - physicists have been motivated by this idea ever since superconductivity was discovered 100 years ago. Researchers working with Bernhard Keimer at the Max Planck Institute for Solid State Research in Stuttgart and Frank Steglich at the Max Planck Institute for Chemical Physics of Solids in Dresden want to gain a detailed understanding of how unconventional superconductors lose their resistivity. (orig.)

  20. Superconducting Panofsky quadrupoles

    International Nuclear Information System (INIS)

    Harwood, L.H.

    1981-01-01

    A design for a rectangular aperture quadrupole magnet without pole-tips was introduced by Hand and Panofsky in 1959. This design was quite radical but simple to construct. Few magnets of this design were ever built because of the large power needed. With the advent of superconducting coils there has been a renewed interest in them. The mathematical basis, field characteristics, and present and future construction of these magnets are described

  1. Basic matrix algebra and transistor circuits

    CERN Document Server

    Zelinger, G

    1963-01-01

    Basic Matrix Algebra and Transistor Circuits deals with mastering the techniques of matrix algebra for application in transistors. This book attempts to unify fundamental subjects, such as matrix algebra, four-terminal network theory, transistor equivalent circuits, and pertinent design matters. Part I of this book focuses on basic matrix algebra of four-terminal networks, with descriptions of the different systems of matrices. This part also discusses both simple and complex network configurations and their associated transmission. This discussion is followed by the alternative methods of de

  2. Protonic transistors from thin reflecting films

    Energy Technology Data Exchange (ETDEWEB)

    Ordinario, David D.; Phan, Long; Jocson, Jonah-Micah [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Nguyen, Tam [Department of Chemistry, University of California, Irvine, California 92697 (United States); Gorodetsky, Alon A., E-mail: alon.gorodetsky@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Chemistry, University of California, Irvine, California 92697 (United States)

    2015-01-01

    Ionic transistors from organic and biological materials hold great promise for bioelectronics applications. Thus, much research effort has focused on optimizing the performance of these devices. Herein, we experimentally validate a straightforward strategy for enhancing the high to low current ratios of protein-based protonic transistors. Upon reducing the thickness of the transistors’ active layers, we increase their high to low current ratios 2-fold while leaving the other figures of merit unchanged. The measured ratio of 3.3 is comparable to the best values found for analogous devices. These findings underscore the importance of the active layer geometry for optimum protonic transistor functionality.

  3. Transistors using crystalline silicon devices on glass

    Science.gov (United States)

    McCarthy, Anthony M.

    1995-01-01

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

  4. Gold nanoparticle-pentacene memory-transistors

    OpenAIRE

    Novembre , Christophe; Guerin , David; Lmimouni , Kamal; Gamrat , Christian; Vuillaume , Dominique

    2008-01-01

    We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off sta...

  5. Cooldown of superconducting magnet strings

    International Nuclear Information System (INIS)

    Yuecel, A.; Carcagno, R.H.

    1995-01-01

    A numerical model for the cooldown of the superconducting magnet strings in the Accelerator System String Test (ASST) Facility at the Superconducting Super Collider (SSC) Laboratory is presented. Numerical results are compared with experimental data from the ASST test runs. Agreement between the numerical predictions and experiments is very good over the entire range from room temperature to liquid helium temperatures. The model can be readily adapted to predict the cooldown and warmup behavior of other superconducting magnets or cold masses

  6. Superconductivity in borides and carbides

    International Nuclear Information System (INIS)

    Muranaka, Takahiro

    2007-01-01

    It was thought that intermetallic superconductors do not exhibit superconductivity at temperatures over 30 K because of the Bardeen-Cooper-Schrieffer (BCS) limit; therefore, researchers have been interested in high-T c cuprates. Our group discovered high-T c superconductivity in MgB 2 at 39 K in 2001. This discovery has initiated a substantial interest in the potential of high-T c superconductivity in intermetallic compounds that include 'light' elements (borides, carbides, etc.). (author)

  7. Superconducting energy storage magnet

    International Nuclear Information System (INIS)

    Eyssa, Y.M.; Boom, R.W.; Young, W.C.; McIntosh, G.E.; Abdelsalam, M.K.

    1986-01-01

    A superconducting magnet is described comprising: (a) a first, outer coil of one layer of conductor including at least a superconducting composite material; (b) a second, inner coil of one layer of conductor including at least a superconducting composite material. The second coil disposed adjacent to the first coil with each turn of the second inner coil at substantially the same level as a turn on the first coil; (c) an inner support structure between the first and second coils and engaged to the conductors thereof, including support rails associated with each turn of conductor in each coil and in contact therewith along its length at positions on the inwardly facing periphery of the conductor. The rail associated with each conductor is electrically isolated from other rails in the inner support structure. The magnetic field produced by a current flowing in the same direction through the conductors of the first and second coils produces a force on the conductors that are directed inwardly toward the inner support structure

  8. Magnetically leviated superconducting bearing

    Science.gov (United States)

    Weinberger, Bernard R.; Lynds, Jr., Lahmer

    1993-01-01

    A magnetically levitated superconducting bearing includes a magnet (2) mounted on a shaft (12) that is rotatable around an axis of rotation and a Type II superconductor (6) supported on a stator (14) in proximity to the magnet (2). The superconductor (6) is positioned so that when it is cooled to its superconducting state in the presence of a magnetic field, it interacts with the magnet (2) to produce an attractive force that levitates the magnet (2) and supports a load on the shaft (12). The interaction between the superconductor (6) and magnet(2) also produces surface screening currents (8) that generate a repulsive force perpendicular to the load. The bearing also has means for maintaining the superconductor at a temperature below its critical temperature (16, 18). The bearing could also be constructed so the magnet (2) is supported on the stator (14) and the superconductor (6) is mounted on the shaft (12). The bearing can be operated by cooling the superconductor (6) to its superconducting state in the presence of a magnetic field.

  9. Lighting up superconducting stripes

    Science.gov (United States)

    Ergeçen, Emre; Gedik, Nuh

    2018-02-01

    Cuprate superconductors display a plethora of complex phases as a function of temperature and carrier concentration, the understanding of which could provide clues into the mechanism of superconductivity. For example, when about one-eighth of the conduction electrons are removed from the copper oxygen planes in cuprates such as La2‑xBaxCuO4 (LBCO), the doped holes (missing electrons) organize into one-dimensional stripes (1). The bulk superconducting transition temperature (Tc) is greatly reduced, and just above Tc, electrical transport perpendicular to the planes (along the c axis) becomes resistive, but parallel to the copper oxygen planes, resistivity remains zero for a range of temperatures (2). It was proposed a decade ago (3) that this anisotropic behavior is caused by pair density waves (PDWs); superconducting Cooper pairs exist along the stripes within the planes but cannot tunnel to the adjacent layers. On page 575 of this issue, Rajasekaran et al. (4) now report detection of this state in LBCO using nonlinear reflection of high-intensity terahertz (THz) light.

  10. Superconductivity in graphite intercalation compounds

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Robert P. [Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE (United Kingdom); Weller, Thomas E.; Howard, Christopher A. [Department of Physics & Astronomy, University College of London, Gower Street, London WCIE 6BT (United Kingdom); Dean, Mark P.M. [Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973 (United States); Rahnejat, Kaveh C. [Department of Physics & Astronomy, University College of London, Gower Street, London WCIE 6BT (United Kingdom); Saxena, Siddharth S. [Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE (United Kingdom); Ellerby, Mark, E-mail: mark.ellerby@ucl.ac.uk [Department of Physics & Astronomy, University College of London, Gower Street, London WCIE 6BT (United Kingdom)

    2015-07-15

    Highlights: • Historical background of graphite intercalates. • Superconductivity in graphite intercalates and its place in the field of superconductivity. • Recent developments. • Relevant modeling of superconductivity in graphite intercalates. • Interpretations that pertain and questions that remain. - Abstract: The field of superconductivity in the class of materials known as graphite intercalation compounds has a history dating back to the 1960s (Dresselhaus and Dresselhaus, 1981; Enoki et al., 2003). This paper recontextualizes the field in light of the discovery of superconductivity in CaC{sub 6} and YbC{sub 6} in 2005. In what follows, we outline the crystal structure and electronic structure of these and related compounds. We go on to experiments addressing the superconducting energy gap, lattice dynamics, pressure dependence, and how these relate to theoretical studies. The bulk of the evidence strongly supports a BCS superconducting state. However, important questions remain regarding which electronic states and phonon modes are most important for superconductivity, and whether current theoretical techniques can fully describe the dependence of the superconducting transition temperature on pressure and chemical composition.

  11. Superconductivity in graphite intercalation compounds

    International Nuclear Information System (INIS)

    Smith, Robert P.; Weller, Thomas E.; Howard, Christopher A.; Dean, Mark P.M.; Rahnejat, Kaveh C.; Saxena, Siddharth S.; Ellerby, Mark

    2015-01-01

    Highlights: • Historical background of graphite intercalates. • Superconductivity in graphite intercalates and its place in the field of superconductivity. • Recent developments. • Relevant modeling of superconductivity in graphite intercalates. • Interpretations that pertain and questions that remain. - Abstract: The field of superconductivity in the class of materials known as graphite intercalation compounds has a history dating back to the 1960s (Dresselhaus and Dresselhaus, 1981; Enoki et al., 2003). This paper recontextualizes the field in light of the discovery of superconductivity in CaC 6 and YbC 6 in 2005. In what follows, we outline the crystal structure and electronic structure of these and related compounds. We go on to experiments addressing the superconducting energy gap, lattice dynamics, pressure dependence, and how these relate to theoretical studies. The bulk of the evidence strongly supports a BCS superconducting state. However, important questions remain regarding which electronic states and phonon modes are most important for superconductivity, and whether current theoretical techniques can fully describe the dependence of the superconducting transition temperature on pressure and chemical composition

  12. Korea's developmental program for superconductivity

    Science.gov (United States)

    Hong, Gye-Won; Won, Dong-Yeon; Kuk, Il-Hyun; Park, Jong-Chul

    1995-04-01

    Superconductivity research in Korea was firstly carried out in the late 70's by a research group in Seoul National University (SNU), who fabricated a small scale superconducting magnetic energy storage system under the financial support from Korea Electric Power Company (KEPCO). But a few researchers were involved in superconductivity research until the oxide high Tc superconductor was discovered by Bednorz and Mueller. After the discovery of YBaCuO superconductor operating above the boiling point of liquid nitrogen (77 K)(exp 2), Korean Ministry of Science and Technology (MOST) sponsored a special fund for the high Tc superconductivity research to universities and national research institutes by recognizing its importance. Scientists engaged in this project organized 'High Temperature Superconductivity Research Association (HITSRA)' for effective conducting of research. Its major functions are to coordinate research activities on high Tc superconductivity and organize the workshop for active exchange of information. During last seven years the major superconductivity research has been carried out through the coordination of HITSRA. The major parts of the Korea's superconductivity research program were related to high temperature superconductor and only a few groups were carrying out research on conventional superconductor technology, and Korea Atomic Energy Research Institute (KAERI) and Korea Electrotechnology Research Institute (KERI) have led this research. In this talk, the current status and future plans of superconductivity research in Korea will be reviewed based on the results presented in interim meeting of HITSRA, April 1-2, 1994. Taejeon, as well as the research activity of KAERI.

  13. The development of superconducting equipment

    CERN Document Server

    Ueda, T; Hiue, H

    2003-01-01

    Fuji Electric has been developing various types of superconducting equipment for over a quarter of a century. This paper describes the development results achieved for superconducting equipment and especially focuses on large-capacity current leads and superconducting transmission systems, the development of which is being promoted for application to the field of nuclear fusion. High temperature superconductor (HTS) is becoming the mainstream in the field of superconductivity, and the HTS floating coil and conduction-cooled HTS transformed are also introduced as recent developments for devices that utilize this technology. (author)

  14. Superconducting magnet development in Japan

    International Nuclear Information System (INIS)

    Yasukochi, K.

    1983-01-01

    The present state of R and D works on the superconducting magnet and its applications in Japan are presented. On electrical rotating machines, 30 MVA superconducting synchronous rotary condenser (Mitsubishi and Fuji) and 50 MVA generator are under construction. Two ways of ship propulsion by superconducting magnets are developing. A superconducting magnetically levitated and linear motor propelled train ''MAGLEV'' was developed by the Japan National Railways (JNR). The superconducting magnet development for fusion is the most active field in Japan. The Cluster Test program has been demonstrated on a 10 T Nb 3 Sn coil and the first coil of Large Coil Task in IEA collaboration has been constructed and the domestic test was completed in JAERI. These works are for the development of toroidal coils of the next generation tokamak machine. R and D works on superconducting ohmic heating coil are in progress in JAERI and ETL. The latter group has constructed 3.8 MJ pulsed coil. A high ramp rate of changing field in pulsed magnet, 200 T/s, has been tested successfully. High Energy Physics Laboratory (KEK) are conducting active works. The superconducting μ meson channel and π meson channel have been constructed and are operating successfully. KEK has also a project of big accelerator named ''TRISTAN'', which is similar to ISABELLE project of BNL. Superconducting synchrotron magnets are developed for this project. The development of superconducting three thin wall solenoid has been started. One of them, CDF, is progressing under USA-Japan collaboration

  15. Superconducting Nonlinear Kinetic Inductance Devices

    Data.gov (United States)

    National Aeronautics and Space Administration — Superconducting quantum interference devices, or SQUIDs, are by far the most sensitive magnetometers available, but two issues limit their commercial potential:...

  16. Unconventional superconductivity in honeycomb lattice

    Directory of Open Access Journals (Sweden)

    P Sahebsara

    2013-03-01

    Full Text Available   ‎ The possibility of symmetrical s-wave superconductivity in the honeycomb lattice is studied within a strongly correlated regime, using the Hubbard model. The superconducting order parameter is defined by introducing the Green function, which is obtained by calculating the density of the electrons ‎ . In this study showed that the superconducting order parameter appears in doping interval between 0 and 0.5, and x=0.25 is the optimum doping for the s-wave superconductivity in honeycomb lattice.

  17. Process for producing clad superconductive materials

    International Nuclear Information System (INIS)

    Cass, R.B.; Ott, K.C.; Peterson, D.E.

    1992-01-01

    This patent describes a process for fabricating superconducting composite wire. It comprises placing a superconductive precursor admixture capable of undergoing self propagating combustion in stoichiometric amounts sufficient to form a superconductive product within an oxygen-porous metal tube; sealing one end of the tube; igniting the superconductive precursor admixture whereby the superconductive precursor admixture endburns along the length of the admixture; and cross-section reducing the tube at a rate substantially equal to the rate of burning of the superconductive precursor admixture and at a point substantially planar with the burnfront of the superconductive precursor mixture, whereby a clad superconductive product is formed in situ

  18. Liquid crystals for organic transistors (Conference Presentation)

    Science.gov (United States)

    Hanna, Jun-ichi; Iino, Hiroaki

    2016-09-01

    Liquid crystals are a new type of organic semiconductors exhibiting molecular orientation in self-organizing manner, and have high potential for device applications. In fact, various device applications have been proposed so far, including photosensors, solar cells, light emitting diodes, field effect transistors, and so on.. However, device performance in those fabricated with liquid crystals is less than those of devices fabricated with conventional materials in spite of unique features of liquid crystals. Here we discuss how we can utilize the liquid crystallinity in organic transistors and how we can overcome conventional non-liquid crystalline organic transistor materials. Then, we demonstrate high performance organic transistors fabricated with a smectic E liquid crystal of Ph-BTBT-10, which show high mobility of over 10cm2/Vs and high thermal durability of over 200oC in OFETs fabricated with its spin-coated polycrystalline thin films.

  19. Lateral power transistors in integrated circuits

    CERN Document Server

    Erlbacher, Tobias

    2014-01-01

    This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

  20. Water-gel for gating graphene transistors.

    Science.gov (United States)

    Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

    2014-05-14

    Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

  1. Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

    International Nuclear Information System (INIS)

    Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu

    2006-01-01

    A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed

  2. Transfer-free fabrication of graphene transistors

    OpenAIRE

    Wessely, P.J.; Wessely, F.; Birinci, E.; Schwalke, U.; Riedinger, B.

    2012-01-01

    The authors invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon, a catalyst system of nanometer thin aluminum/nickel double layer is used. This catalyst system is structured via liftoff before the wafer enters the catalytic chemical vapor deposition (CCVD) chamber. In the subsequent methane-based growth process, monolayer graphene field-effect transistors and...

  3. Diffusion pipes at PNP switching transistors

    International Nuclear Information System (INIS)

    Sachelarie, D.; Postolache, C.; Gaiseanu, F.

    1976-01-01

    The appearance of the ''diffusion pipes'' greatly affects the fabrication of the PNP high-frequency/very-fast-switching transistors. A brief review of the principal problems connected to the presence of these ''pipes'' is made. A research program is presented which permitted the fabrication of the PNP switching transistors at ICCE-Bucharest, with transition frequency fsub(T) = 1.2 GHz and storage time tsub(s) = 4.5 ns. (author)

  4. Integrated amplifying circuit with MOS transistors

    Energy Technology Data Exchange (ETDEWEB)

    Baylac, B; Merckel, G; Meunier, P

    1974-01-25

    The invention relates to a feedback-pass-band amplifier with MOS-transistors. The differential stage of conventional amplifiers is changed into an adding state, whereas the differential amplification stages are changed into amplifier inverter stages. All MOS transistors used in that amplifier are of similar configuration and are interdigitized, whereby the operating speed dispersion is reduced. This can be applied to obtaining a measurement channel for proportional chambers.

  5. Controlled assembly and single electron charging of monolayer protected Au144 clusters: an electrochemistry and scanning tunneling spectroscopy study

    Science.gov (United States)

    Bodappa, Nataraju; Fluch, Ulrike; Fu, Yongchun; Mayor, Marcel; Moreno-García, Pavel; Siegenthaler, Hans; Wandlowski, Thomas

    2014-11-01

    Single gold particles may serve as room temperature single electron memory units because of their size dependent electronic level spacing. Here, we present a proof-of-concept study by electrochemically controlled scanning probe experiments performed on tailor-made Au particles of narrow dispersity. In particular, the charge transport characteristics through chemically synthesized hexane-1-thiol and 4-pyridylbenzene-1-thiol mixed monolayer protected Au144 clusters (MPCs) by differential pulse voltammetry (DPV) and electrochemical scanning tunneling spectroscopy (EC-STS) are reported. The pyridyl groups exposed by the Au-MPCs enable their immobilization on Pt(111) substrates. By varying the humidity during their deposition, samples coated by stacks of compact monolayers of Au-MPCs or decorated with individual, laterally separated Au-MPCs are obtained. DPV experiments with stacked monolayers of Au144-MPCs and EC-STS experiments with laterally separated individual Au144-MPCs are performed both in aqueous and ionic liquid electrolytes. Lower capacitance values were observed for individual clusters compared to ensemble clusters. This trend remains the same irrespective of the composition of the electrolyte surrounding the Au144-MPC. However, the resolution of the energy level spacing of the single clusters is strongly affected by the proximity of neighboring particles.Single gold particles may serve as room temperature single electron memory units because of their size dependent electronic level spacing. Here, we present a proof-of-concept study by electrochemically controlled scanning probe experiments performed on tailor-made Au particles of narrow dispersity. In particular, the charge transport characteristics through chemically synthesized hexane-1-thiol and 4-pyridylbenzene-1-thiol mixed monolayer protected Au144 clusters (MPCs) by differential pulse voltammetry (DPV) and electrochemical scanning tunneling spectroscopy (EC-STS) are reported. The pyridyl groups

  6. Proposal for a phase-coherent thermoelectric transistor

    International Nuclear Information System (INIS)

    Giazotto, F.; Robinson, J. W. A.; Moodera, J. S.; Bergeret, F. S.

    2014-01-01

    Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer a solution since their near perfect electron-hole symmetry leads to a negligible thermoelectric response; however, here we demonstrate theoretically a superconducting thermoelectric transistor which offers unparalleled figures of merit of up to ∼45 and Seebeck coefficients as large as a few mV/K at sub-Kelvin temperatures. The device is also phase-tunable meaning its thermoelectric response for power generation can be precisely controlled with a small magnetic field. Our concept is based on a superconductor-normal metal-superconductor interferometer in which the normal metal weak-link is tunnel coupled to a ferromagnetic insulator and a Zeeman split superconductor. Upon application of an external magnetic flux, the interferometer enables phase-coherent manipulation of thermoelectric properties whilst offering efficiencies which approach the Carnot limit

  7. Proposal for a phase-coherent thermoelectric transistor

    Energy Technology Data Exchange (ETDEWEB)

    Giazotto, F., E-mail: giazotto@sns.it [NEST, Instituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa (Italy); Robinson, J. W. A., E-mail: jjr33@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Moodera, J. S. [Department of Physics and Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bergeret, F. S., E-mail: sebastian-bergeret@ehu.es [Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Manuel de Lardizabal 4, E-20018 San Sebastián (Spain); Donostia International Physics Center (DIPC), Manuel de Lardizabal 5, E-20018 San Sebastián (Spain)

    2014-08-11

    Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer a solution since their near perfect electron-hole symmetry leads to a negligible thermoelectric response; however, here we demonstrate theoretically a superconducting thermoelectric transistor which offers unparalleled figures of merit of up to ∼45 and Seebeck coefficients as large as a few mV/K at sub-Kelvin temperatures. The device is also phase-tunable meaning its thermoelectric response for power generation can be precisely controlled with a small magnetic field. Our concept is based on a superconductor-normal metal-superconductor interferometer in which the normal metal weak-link is tunnel coupled to a ferromagnetic insulator and a Zeeman split superconductor. Upon application of an external magnetic flux, the interferometer enables phase-coherent manipulation of thermoelectric properties whilst offering efficiencies which approach the Carnot limit.

  8. Heavy-ion superconducting linacs

    International Nuclear Information System (INIS)

    Delayen, J.R.

    1989-01-01

    This paper reviews the status of the superconducting heavy-ion accelerators. Most of them are linacs used as boosters for tandem electrostatic accelerators, although the technology is being extended to very low velocity to eliminate the need for an injector. The characteristics and features of the various superconducting heavy-ion accelerators are discussed. 45 refs

  9. Heavy-ion superconducting linacs

    Energy Technology Data Exchange (ETDEWEB)

    Delayen, J.R.

    1989-01-01

    This paper reviews the status of the superconducting heavy-ion accelerators. Most of them are linacs used as boosters for tandem electrostatic accelerators, although the technology is being extended to very low velocity to eliminate the need for an injector. The characteristics and features of the various superconducting heavy-ion accelerators are discussed. 45 refs.

  10. Meissner effect in superconducting microtraps

    OpenAIRE

    Cano, Daniel

    2009-01-01

    This thesis investigates the impact of the Meissner effect on magnetic microtraps for ultracold atoms near superconducting microstructures. This task has been accomplished both theoretically and experimentally. The Meissner effect distorts the magnetic fields near superconducting surfaces, thus altering the parameters of magnetic microtraps. Both computer simulations and experimental measurements demonstrate that the Meissner effect shortens the distance between the magnetic microtrap and the...

  11. Superconducting magnet for 'ML-100'

    Energy Technology Data Exchange (ETDEWEB)

    Saito, R; Fujinaga, T; Tada, N; Kimura, H

    1974-07-01

    A magneticaly levitated experimental vehicle (Ml-100) was designed and constructed in commemoration of the centenary of the Japanese National Railways. For magnetic levitation the vehicle is provided with two superconducting magnets. In the test operation of the vehicle, these superconducting magnets showed stable performance in levitating vehicle body.

  12. Superconducting bearings for flywheel applications

    Energy Technology Data Exchange (ETDEWEB)

    Abrahamsen, Asger Bech

    2001-05-01

    A literature study on the application of superconducting bearings in energy storage flywheel systems. The physics of magnetic levitation and superconductors are presented in the first part of the report, followed by a discussion of the literature found on the applications of superconducting bearings in flywheels. (au)

  13. Superconducting bearings for flywheel applications

    DEFF Research Database (Denmark)

    Abrahamsen, A.B.

    2001-01-01

    A literature study on the application of superconducting bearings in energy storage flywheel systems. The physics of magnetic levitation and superconductors are presented in the first part of the report, followed by a discussion of the literature found onthe applications of superconducting bearings...

  14. Superconducting Qubit Optical Transducer (SQOT)

    Science.gov (United States)

    2015-08-05

    parts on optical signals and any quasiparticle loss caused by optical photons on microwave signals. Using a superconducting 3D cavity as the microwave...plasmonic and quasiparticle losses. 3. The electro-optic material should be easily integrable with superconducting circuits. A fully integrated

  15. The Danish Superconducting Cable Project

    DEFF Research Database (Denmark)

    Tønnesen, Ole

    1997-01-01

    The design and construction of a superconducting cable is described. The cable has a room temperature dielectric design with the cryostat placed inside the electrical insulation.BSCCO 2223 superconducting tapes wound in helix form around a former are used as the cable conductor. Results from...

  16. the tj model and superconductivity

    African Journals Online (AJOL)

    DJFLEX

    Perhaps that in the reason why their explanations of the superconductivity have had limited scope . A proper theory and mechanism of superconductivity in the ceramic cuprates should take account of magnetism inherent in the compounds. For the (214) compound experiment have revealed strong antiferromagnetic (AF).

  17. Superconducting cavities for beauty factories

    International Nuclear Information System (INIS)

    Lengeler, H.

    1992-01-01

    The possibilities and merits of superconducting accelerating cavities for Beauty-factories are considered. There exist already large sc systems of size and frequency comparable to the ones needed for Beauty-factories. Their status and operation experience is discussed. A comparison of normal conducting and superconducting systems is done for two typical Beauty-factory rings

  18. A superconducting magnetic gear

    International Nuclear Information System (INIS)

    Campbell, A M

    2016-01-01

    A comparison is made between a magnetic gear using permanent magnets and superconductors. The objective is to see if there are any fundamental reasons why superconducting magnets should not provide higher power densities than permanent magnets. The gear is based on the variable permeability design of Attilah and Howe (2001 IEEE Trans. Magn. 37 2844–46) in which a ring of permanent magnets surrounding a ring of permeable pole pieces with a different spacing gives an internal field component at the beat frequency. Superconductors can provide much larger fields and forces but will saturate the pole pieces. However the gear mechanism still operates, but in a different way. The magnetisation of the pole pieces is now constant but rotates with angle at the beat frequency. The result is a cylindrical Halbach array which produces an internal field with the same symmetry as in the linear regime, but has an analytic solution. In this paper a typical gear system is analysed with finite elements using FlexPDE. It is shown that the gear can work well into the saturation regime and that the Halbach array gives a good approximation to the results. Replacing the permanent magnets with superconducting tapes can give large increases in torque density, and for something like a wind turbine a combined gear and generator is possible. However there are major practical problems. Perhaps the most fundamental is the large high frequency field which is inevitably present and which will cause AC losses. Also large magnetic fields are required, with all the practical problems of high field superconducting magnets in rotating machines. Nevertheless there are ways of mitigating these difficulties and it seems worthwhile to explore the possibilities of this technology further. (paper)

  19. Superconductivity at the industrial scale

    International Nuclear Information System (INIS)

    Tixador, P.; Lebrun, Ph.

    2011-01-01

    The discovery of superconductivity is 100 years old but theoretical works are still necessary: the BCS theory does not apply to the new families of high temperature superconducting materials discovered after 1986. In 2001 it was discovered that MgB 2 is superconducting at 39 K, this critical temperature is not the highest but MgB 2 is easy to produce and cheap. Today's highest critical temperature under atmospheric pressure is that of the HgTlBaCaCuO compound: 138 K. The complexity and the cost of cryogenic systems restrain the applications of superconductivity. The author reviews the applications of superconducting in medical imaging, particle detectors, and in the safety systems of power networks. (A.C.)

  20. Japan. Superconductivity for Smart Grids

    Energy Technology Data Exchange (ETDEWEB)

    Hayakawa, K.

    2012-11-15

    Currently, many smart grid projects are running or planned worldwide. These aim at controlling the electricity supply more efficiently and more stably in a new power network system. In Japan, especially superconductivity technology development projects are carried out to contribute to the future smart grid. Japanese cable makers such as Sumitomo Electric and Furukawa Electric are leading in the production of high-temperature superconducting (HTS) power cables. The world's largest electric current and highest voltage superconductivity proving tests have been started this year. Big cities such as Tokyo will be expected to introduce the HTS power cables to reduce transport losses and to meet the increased electricity demand in the near future. Superconducting devices, HTS power cables, Superconducting Magnetic Energy Storage (SMES) and flywheels are the focus of new developments in cooperations between companies, universities and research institutes, funded by the Japanese research and development funding organization New Energy and Industrial Technology Development Organization (NEDO)

  1. Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics.

    Science.gov (United States)

    Balliou, Angelika; Bouroushian, Mirtat; Douvas, Antonios M; Skoulatakis, George; Kennou, Stella; Glezos, Nikos

    2018-07-06

    All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV-vis spectroscopy and AFM measurements show that this functionality stems from the films' ability to structurally tune their HOMO-LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on SiO 2 at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures' plausibility for on-chip molecular electronics operative at room temperature.

  2. Revealing energy level structure of individual quantum dots by tunneling rate measured by single-electron sensitive electrostatic force spectroscopy.

    Science.gov (United States)

    Roy-Gobeil, Antoine; Miyahara, Yoichi; Grutter, Peter

    2015-04-08

    We present theoretical and experimental studies of the effect of the density of states of a quantum dot (QD) on the rate of single-electron tunneling that can be directly measured by electrostatic force microscopy (e-EFM) experiments. In e-EFM, the motion of a biased atomic force microscope cantilever tip modulates the charge state of a QD in the Coulomb blockade regime. The charge dynamics of the dot, which is detected through its back-action on the capacitavely coupled cantilever, depends on the tunneling rate of the QD to a back-electrode. The density of states of the QD can therefore be measured through its effect on the energy dependence of tunneling rate. We present experimental data on individual 5 nm colloidal gold nanoparticles that exhibit a near continuous density of state at 77 K. In contrast, our analysis of already published data on self-assembled InAs QDs at 4 K clearly reveals discrete degenerate energy levels.

  3. Size-dependent single electron transfer and semi-metal-to-insulator transitions in molecular metal oxide electronics

    Science.gov (United States)

    Balliou, Angelika; Bouroushian, Mirtat; Douvas, Antonios M.; Skoulatakis, George; Kennou, Stella; Glezos, Nikos

    2018-07-01

    All-inorganic self-arranged molecular transition metal oxide hyperstructures based on polyoxometalate molecules (POMs) are fabricated and tested as electronically tunable components in emerging electronic devices. POM hyperstructures reveal great potential as charging nodes of tunable charging level for molecular memories and as enhancers of interfacial electron/hole injection for photovoltaic stacks. STM, UPS, UV–vis spectroscopy and AFM measurements show that this functionality stems from the films’ ability to structurally tune their HOMO–LUMO levels and electron localization length at room temperature. By adapting POM nanocluster size in solution, self-doping and current modulation of four orders of magnitude is monitored on a single nanocluster on SiO2 at voltages as low as 3 Volt. Structurally driven insulator-to-semi-metal transitions and size-dependent current regulation through single electron tunneling are demonstrated and examined with respect to the stereochemical and electronic structure of the molecular entities. This extends the value of self-assembly as a tool for correlation length and electronic properties tuning and demonstrate POM hyperstructures’ plausibility for on-chip molecular electronics operative at room temperature.

  4. Self-Assembled Colloidal Particle Clusters from In Situ Pickering-Like Emulsion Polymerization via Single Electron Transfer Mechanism.

    Science.gov (United States)

    Yuan, Jinfeng; Zhao, Weiting; Pan, Mingwang; Zhu, Lei

    2016-08-01

    A simple route is reported to synthesize colloidal particle clusters (CPCs) from self-assembly of in situ poly(vinylidene fluoride)/poly(styrene-co-tert-butyl acrylate) [PVDF/P(St-co-tBA)] Janus particles through one-pot seeded emulsion single electron transfer radical polymerization. In the in situ Pickering-like emulsion polymerization, the tBA/St/PVDF feed ratio and polymerization temperature are important for the formation of well-defined CPCs. When the tBA/St/PVDF feed ratio is 0.75 g/2.5 g/0.5 g and the reaction temperature is 35 °C, relatively uniform raspberry-like CPCs are obtained. The hydrophobicity of the P(St-co-tBA) domains and the affinity of PVDF to the aqueous environment are considered to be the driving force for the self-assembly of the in situ formed PVDF/P(St-co-tBA) Janus particles. The resultant raspberry-like CPCs with PVDF particles protruding outward may be promising for superhydrophobic smart coatings. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Quantum discord and classical correlation signatures of mobility edges in one-dimensional aperiodic single-electron systems

    International Nuclear Information System (INIS)

    Gong, Longyan; Zhu, Hao; Zhao, Shengmei; Cheng, Weiwen; Sheng, Yubo

    2012-01-01

    We investigate numerically the quantum discord and the classical correlation in a one-dimensional slowly varying potential model and a one-dimensional Soukoulis–Economou ones, respectively. There are well-defined mobility edges in the slowly varying potential model, while there are discrepancies on mobility edges in the Soukoulis–Economou ones. In the slowly varying potential model, we find that extended and localized states can be distinguished by both the quantum discord and the classical correlation. There are sharp transitions in the quantum discord and the classical correlation at mobility edges. Based on these, we study “mobility edges” in the Soukoulis–Economou model using the quantum discord and the classical correlation, which gives another perspectives for these “mobility edges”. All these provide us good quantities, i.e., the quantum discord and the classical correlation, to reflect mobility edges in these one-dimensional aperiodic single-electron systems. Moreover, our studies propose a consistent interpretation of the discrepancies between previous numerical results about the Soukoulis–Economou model. -- Highlights: ► Quantum discord and classical correlation can signal mobility edges in two models. ► An interpretation for mobility edges in the Soukoulis–Economou model is proposed. ► Quantum discord and classical correlation can reflect well localization properties.

  6. Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon.

    Science.gov (United States)

    Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J

    2013-04-19

    The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

  7. Free terminal amines in DNA-binding peptides alter the product distribution from guanine radicals produced by single electron oxidation.

    Science.gov (United States)

    Konigsfeld, Katie M; Lee, Melissa; Urata, Sarah M; Aguilera, Joe A; Milligan, Jamie R

    2012-03-01

    Electron deficient guanine radical species are major intermediates produced in DNA by the direct effect of ionizing irradiation. There is evidence that they react with amine groups in closely bound ligands to form covalent crosslinks. Crosslink formation is very poorly characterized in terms of quantitative rate and yield data. We sought to address this issue by using oligo-arginine ligands to model the close association of DNA and its binding proteins in chromatin. Guanine radicals were prepared in plasmid DNA by single electron oxidation. The product distribution derived from them was assayed by strand break formation after four different post-irradiation incubations. We compared the yields of DNA damage produced in the presence of four ligands in which neither, one, or both of the amino and carboxylate termini were blocked with amides. Free carboxylate groups were unreactive. Significantly higher yields of heat labile sites were observed when the amino terminus was unblocked. The rate of the reaction was characterized by diluting the unblocked amino group with its amide blocked derivative. These observations provide a means to develop quantitative estimates for the yields in which these labile sites are formed in chromatin by exposure to ionizing irradiation.

  8. Review of superconducting linacs

    International Nuclear Information System (INIS)

    Bollinger, L.M.

    1992-01-01

    This paper summarizes the status of the technology of superconducting (SC) linacs designed for the acceleration of ions. The emphasis is on the technical issues involved, with only brief descriptions of the numerous linacs now in operation or under construction. Recent developments of special interest are treated in more detail, and remaining technical challenges are outlined. The technology required for acceleration of ions with velocity β ∼ 1 is not discussed because it is almost the same as for relativistic electrons. That is, this paper is mainly about SC linacs for low-velocity heavy ions. (Author) 5 tabs., 6 figs., 29 refs

  9. A superconducting electron spectrometer

    International Nuclear Information System (INIS)

    Guttormsen, M.; Huebel, H.; Grumbkow, A. von

    1983-03-01

    The set-up and tests of an electron spectrometer for in-beam conversion electron measurements are described. A superconducting solenoid is used to transport the electrons from the target to cooled Si(Li) detectors. The solenoid is designed to produce either a homogeneous axially symmetric field of up to 2 Tesla or a variety of field profiles by powering the inner and outer set of coils of the solenoid separately. The electron trajectories resulting for various field profiles are discussed. In-beam electron spectra taken in coincidence with electrons, gammas and alpha-particles are shown. (Auth.)

  10. Superconducting ac cable

    Science.gov (United States)

    Schmidt, F.

    1980-11-01

    The components of a superconducting 110 kV ac cable for power ratings or = 2000 MVA were developed. The cable design is of the semiflexible type, with a rigid cryogenic envelope containing a flexible hollow coaxial cable core. The cable core consists of spirally wound Nb-A1 composite wires electrically insulated by high pressure polyethylene tape wrappings. A 35 m long single phase test cable with full load terminals rated at 110 kV and 10 kA was constructed and successfully tested. The results obtained prove the technical feasibility and capability of this cable design.

  11. Superconductivity in nanostructured lead

    Science.gov (United States)

    Lungu, Anca; Bleiweiss, Michael; Amirzadeh, Jafar; Saygi, Salih; Dimofte, Andreea; Yin, Ming; Iqbal, Zafar; Datta, Timir

    2001-01-01

    Three-dimensional nanoscale structures of lead were fabricated by electrodeposition of pure lead into artificial porous opal. The size of the metallic regions was comparable to the superconducting coherence length of bulk lead. Tc as high as 7.36 K was observed, also d Tc/d H was 2.7 times smaller than in bulk lead. Many of the characteristics of these differ from bulk lead, a type I superconductor. Irreversibility line and magnetic relaxation rates ( S) were also studied. S( T) displayed two maxima, with a peak value about 10 times smaller than that of typical high- Tc superconductors.

  12. Remarks on superconductive networks

    International Nuclear Information System (INIS)

    Dominguez, D.; Lopez, A.R.N.; Simonin, J.M.

    1989-01-01

    Some remarks on the determination of the normal-superconductor phase boundary in random superconductive networks are made. A recently reported work by Soukoulis, Grest and Li which introduces weak links between nodes as these are removed in the site percolation problem is discussed. By the analysis of two simple geometries, it is shown that this procedure introduces spurious effects which mask the physical properties of the system. These affect in particular the field slope critical index and the sharpness of the normal-superconductor boundary. (Author)

  13. Superconducting magnet cooling system

    Science.gov (United States)

    Vander Arend, Peter C.; Fowler, William B.

    1977-01-01

    A device is provided for cooling a conductor to the superconducting state. The conductor is positioned within an inner conduit through which is flowing a supercooled liquid coolant in physical contact with the conductor. The inner conduit is positioned within an outer conduit so that an annular open space is formed therebetween. Through the annular space is flowing coolant in the boiling liquid state. Heat generated by the conductor is transferred by convection within the supercooled liquid coolant to the inner wall of the inner conduit and then is removed by the boiling liquid coolant, making the heat removal from the conductor relatively independent of conductor length.

  14. Introduction to superconductivity

    CERN Document Server

    Rose-Innes, A C

    1978-01-01

    Introduction to Superconductivity differs from the first edition chiefly in Chapter 11, which has been almost completely rewritten to give a more physically-based picture of the effects arising from the long-range coherence of the electron-waves in superconductors and the operation of quantum interference devices. In this revised second edition, some further modifications have been made to the text and an extra chapter dealing with """"high-temperature"""" superconductors has been added. A vast amount of research has been carried out on these since their discovery in 1986 but the results, both

  15. Ruthenates: simple superconducting qubits

    International Nuclear Information System (INIS)

    Gulian, Armen M.; Wood, Kent S.

    2004-01-01

    We propose triplet superconductors, such as ruthenates, as a prospective material for qubit construction. The vectorial nature of the order parameter in triplet superconductors makes it conceptually very easy to imagine the performance of the qubits. The Cooper condensate of pairs in triplet superconductors has all the attributes of the Bose-Einstein condensates and should facilitate long decoherence times of these qubits versus other 'vectorial' schemes for qubits, such as small ferromagnets. There are other benefits, which the superconducting state provides for a requirement like entanglement between qubits via the proximity effect

  16. Superconductivity in nanowires

    CERN Document Server

    Bezryadin, Alexey

    2012-01-01

    The importance and actuality of nanotechnology is unabated and will be for years to come. A main challenge is to understand the various properties of certain nanostructures, and how to generate structures with specific properties for use in actual applications in Electrical Engineering and Medicine.One of the most important structures are nanowires, in particular superconducting ones. They are highly promising for future electronics, transporting current without resistance and at scales of a few nanometers. To fabricate wires to certain defined standards however, is a major challenge, and so i

  17. Superconductivity at disordered interfaces

    International Nuclear Information System (INIS)

    Simanek, E.

    1979-01-01

    The increase of the superconducting transition temperature Tsub(c) due to the tunneling of conduction electrons into negative-u centers at a disordered metal-semiconductor interface is calculated. The strong dependence of the experimental increase of Tsub(c) on the Fermi energy of the metal is accounted for by the polaronic reduction of the tunneling matrix elements. The latter reduction is dynamically suppressed by the decreasing lifetime of the localized state as Esub(F) increases. The theoretical enhancement is sufficiently strong to explain the increase of Tsub(c) observed in eutectic alloys. (author)

  18. New theory of superconductivity

    International Nuclear Information System (INIS)

    Bell, A.B.; Bell, D.M.

    1978-01-01

    Based on three earlier papers which treat electromagnetic, elastogravitational, and radiant-nonradiant thermal phenomena in terms of six types of electric or nonelectric charges, the authors classify states of matter as hyperefficient, efficient, semiefficient, and hypoefficient in transmitting a particular type of charge, by means of a generalization of Ohm's law to two or three dimensions. Conventional states of matter (solid, liquid, gas, vacuum) are associated with torsional (gravitational) charges. Applications are made to electric superconductivity of crystals at elevated temperatures, and to frequency shift

  19. AGS superconducting bending magnets

    International Nuclear Information System (INIS)

    Robins, K.E.; Sampson, W.B.; McInturff, A.D.; Dahl, P.F.; Abbatiello, F.; Aggus, J.; Bamberger, J.; Brown, D.; Damm, R.; Kassner, D.; Lasky, C.; Schlafke, A.

    1976-01-01

    Four large aperture superconducting bending magnets are being built for use in the experimental beams at the AGS. Each of these magnets is 2.5 m long and has a room temperature aperture of 20 cm. The magnets are similar in design to the dipoles being developed for ISABELLE and employ a low temperature iron core. Results are presented on the ''training'' behavior of the magnets and a comparison will be made with the smaller aperture versions of this design. The magnet field measurements include end fields and leakage fields as well as the harmonic components of the straight section of the magnet

  20. High gradient superconducting quadrupoles

    International Nuclear Information System (INIS)

    Lundy, R.A.; Brown, B.C.; Carson, J.A.; Fisk, H.E.; Hanft, R.H.; Mantsch, P.M.; McInturff, A.D.; Remsbottom, R.H.

    1987-07-01

    Prototype superconducting quadrupoles with a 5 cm aperture and gradient of 16 kG/cm have been built and tested as candidate magnets for the final focus at SLC. The magnets are made from NbTi Tevatron style cable with 10 inner and 14 outer turns per quadrant. Quench performance and multipole data are presented. Design and data for a low current, high gradient quadrupole, similar in cross section but wound with a cable consisting of five insulated conductors are also discussed

  1. Stabilized superconductive wires

    International Nuclear Information System (INIS)

    Randall, R.N.; Wong, J.

    1976-01-01

    A stable, high field, high current conductor is produced by packing multiple, multi-layer rods of a bronze core and niobium or vanadium inner jacket and copper outer jacket into a pure copper tube or other means for forming a pure copper matrix, sealing, working the packed tube to a wire, and by diffusion, heat treating to form a type II superconducting, Beta-Wolfram structure, intermetallic compound as a layer within each of several filaments derived from the rods. The layer of Beta-Wolfram structure compound may be formed in less than 2 h of diffusion heat treatment in a thickness of 0.5--2μ

  2. Superconducting ac cable

    International Nuclear Information System (INIS)

    Schmidt, F.

    1980-01-01

    The components of a superconducting 110 kV ac cable for power ratings >= 2000 MVA have been developed. The cable design especially considered was of the semiflexible type, with a rigid cryogenic envelope and flexible hollow coaxial cable cores pulled into the former. The cable core consists of spirally wound Nb-Al composite wires and a HDPE-tape wrapped electrical insulation. A 35 m long single phase test cable with full load terminations for 110 kV and 10 kA was constructed and successfully tested. The results obtained prove the technical feasibility and capability of our cable design. (orig.) [de

  3. Modern high-temperature superconductivity

    International Nuclear Information System (INIS)

    Ching Wu Chu

    1988-01-01

    Ever since the discovery of superconductivity in 1911, its unusual scientific challenge and great technological potential have been recognized. For the past three-quarters of a century, superconductivity has done well on the science front. This is because sueprconductivity is interesting not only just in its own right but also in its ability to act as a probe to many exciting nonsuperconducting phenomena. For instance, it has continued to provide bases for vigorous activities in condensed matter science. Among the more recent examples are heavy-fermion systems and organic superconductors. During this same period of time, superconductivity has also performed admirably in the applied area. Many ideas have been conceived and tested, making use of the unique characteristics of superconductivity - zero resistivity, quantum interference phenomena, and the Meissner effect. In fact, it was not until late January 1987 that it became possible to achieve superconductivity with the mere use of liquid nitrogen - which is plentiful, cheap, efficient, and easy to handle - following the discovery of supercondictivity above 90 K in Y-Ba-Cu-O, the first genuine quaternary superconductor. Superconductivity above 90 K poses scientific and technological challenges not previously encountered: no existing theories can adequately describe superconductivity above 40 K and no known techniques can economically process the materials for full-scale applications. In this paper, therefore, the author recalls a few events leading to the discovery of the new class of quaternary compounds with a superconducting transition temperature T c in the 90 K range, describes the current experimental status of high-temperature superconductivity and, finally, discusses the prospect of very-high-temperature superconductivity, i.e., with a T c substantially higher than 100 K. 97 refs., 7 figs

  4. Overview on superconducting photoinjectors

    CERN Document Server

    Arnold, A

    2011-01-01

    The success of most of the proposed energy recovery linac (ERL) based electron accelerator projects for future storage ring replacements (SRR) and high power IR–free-electron lasers (FELs) largely depends on the development of an appropriate source. For example, to meet the FEL specifications [J.W. Lewellen, Proc. SPIE Int. Soc. Opt. Eng. 5534, 22 (2004)] electron beams with an unprecedented combination of high brightness, low emittance (0.1 µmrad), and high average current (hundreds of mA) are required. An elegant way to create a beam of such quality is to combine the high beam quality of a normal conducting rf photoinjector with the superconducting technology, i.e., to build a superconducting rf photoinjector (SRF gun). SRF gun R&D programs based on different approaches have been launched at a growing number of institutes and companies (AES, Beijing University, BESSY, BNL, DESY, FZD, TJNAF, Niowave, NPS, Wisconsin University). Substantial progress was achieved in recent years and the first long term ...

  5. Superconducting composites materials

    International Nuclear Information System (INIS)

    Kerjouan, P.; Boterel, F.; Lostec, J.; Bertot, J.P.; Haussonne, J.M.

    1991-01-01

    The new superconductor materials with a high critical current own a large importance as well in the electronic components or in the electrotechnical devices fields. The deposit of such materials with the thick films technology is to be more and more developed in the years to come. Therefore, we tried to realize such thick films screen printed on alumina, and composed mainly of the YBa 2 Cu 3 O 7-δ material. We first realized a composite material glass/YBa 2 Cu 3 O 7-δ , by analogy with the classical screen-printed inks where the glass ensures the bonding with the substrate. We thus realized different materials by using some different classes of glass. These materials owned a superconducting transition close to the one of the pure YBa 2 Cu 3 O 7-δ material. We made a slurry with the most significant composite materials and binders, and screen-printed them on an alumina substrate preliminary or not coated with a diffusion barrier layer. After firing, we studied the thick films adhesion, the alumina/glass/composite material interfaces, and their superconducting properties. 8 refs.; 14 figs.; 9 tabs [fr

  6. Superconducting magnetic energy storage

    International Nuclear Information System (INIS)

    Rogers, J.D.; Boenig, H.J.

    1978-01-01

    Superconducting inductors provide a compact and efficient means of storing electrical energy without an intermediate conversion process. Energy storage inductors are under development for diurnal load leveling and transmission line stabilization in electric utility systems and for driving magnetic confinement and plasma heating coils in fusion energy systems. Fluctuating electric power demands force the electric utility industry to have more installed generating capacity than the average load requires. Energy storage can increase the utilization of base-load fossil and nuclear power plants for electric utilities. Superconducting magnetic energy storage (SMES) systems, which will store and deliver electrical energy for load leveling, peak shaving, and the stabilization of electric utility networks are being developed. In the fusion area, inductive energy transfer and storage is also being developed by LASL. Both 1-ms fast-discharge theta-pinch and 1-to-2-s slow tokamak energy transfer systems have been demonstrated. The major components and the method of operation of an SMES unit are described, and potential applications of different size SMES systems in electric power grids are presented. Results are given for a 1-GWh reference design load-leveling unit, for a 30-MJ coil proposed stabilization unit, and for tests with a small-scale, 100-kJ magnetic energy storage system. The results of the fusion energy storage and transfer tests are also presented. The common technology base for the systems is discussed

  7. Lightweight superconducting alternators

    International Nuclear Information System (INIS)

    Keim, T.A.

    1988-01-01

    One of the most efficient and most lightweight means of converting high-temperature heat energy to electricity is a turboalternator set. Turboalternators are potentially important components of burst-mode power systems, either chemical or nuclear powered. Also, they are probable key components in future electric propulsion systems. Existing examples of multimegawatt turbomachines have been optimized for a variety of aerospace uses, ranging from aircraft propulsion to rocket engine fuel pump drives. There is no corresponding history of multimegawatt alternators built to aerospace standards of mass, performance, and reliability. This paper discusses one of the few such development efforts presently in progress, and gives an indication of possible future potential. In large power ratings, superconducting generators offer substantial power density, specific weight, and efficiency advantages over competing technologies. A program at GE has led to the construction of a lightweight high-voltage 20-MW generator with a superconducting field winding. The first part of this paper describes the design of the generator. The second projects the capabilities of the generator to other ratings

  8. Superconducting magnet for MAGLEV

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Fumio; Miyairi,; Komei,; Goto, Fumihiko [Hitachi, Ltd., Tokyo, (Japan)

    1989-07-25

    In the superconducting magnet for MAGLEV , the magnet itself travels. It is, therefore, important to know the dynamic behavior which accompanies the traveling; and for the designing of a superconducting magnet, analysis of mechanical characteristics as well as electromagnetic characteristics is required. This is a report on the recent analyzing technology of mechanical characteristics by CAE(Computer Aided Engineering). The analysis is conducted by an on-line system of finite element method. Most important for the analysis are that the analysis model is appropriate and that basic data coincide with the actual condition. Recent analysis results are as follows. Equivalent rigidity of coils can be calculated by an analysis model and the calculated value agrees with the experiment value. Structure of the internal drum can be optimized with the parameter of deformation or stress. Analysis result of a load supporting material agrees with the experiment value when a correction coefficient (0.5) is introduced to the elastic modulus of FRP. 2 refs., 10 figs.

  9. Superconducting Magnets for Accelerators

    Science.gov (United States)

    Brianti, G.; Tortschanoff, T.

    1993-03-01

    This chapter describes the main features of superconducting magnets for high energy synchrotrons and colliders. It refers to magnets presently used and under development for the most advanced accelerators projects, both recently constructed or in the preparatory phase. These magnets, using the technology mainly based on the NbTi conductor, are described from the aspect of design, materials, construction and performance. The trend toward higher performance can be gauged from the doubling of design field in less than a decade from about 4 T for the Tevatron to 10 T for the LHC. Special properties of the superconducting accelerator magnets, such as their general layout and the need of extensive computational treatment, the limits of performance inherent to the available conductors, the requirements on the structural design are described. The contribution is completed by elaborating on persistent current effects, quench protection and the cryostat design. As examples the main magnets for HERA and SSC, as well as the twin-aperture magnets for LHC, are presented.

  10. Additive Manufactured Superconducting Cavities

    Science.gov (United States)

    Holland, Eric; Rosen, Yaniv; Woolleet, Nathan; Materise, Nicholas; Voisin, Thomas; Wang, Morris; Mireles, Jorge; Carosi, Gianpaolo; Dubois, Jonathan

    Superconducting radio frequency cavities provide an ultra-low dissipative environment, which has enabled fundamental investigations in quantum mechanics, materials properties, and the search for new particles in and beyond the standard model. However, resonator designs are constrained by limitations in conventional machining techniques. For example, current through a seam is a limiting factor in performance for many waveguide cavities. Development of highly reproducible methods for metallic parts through additive manufacturing, referred to colloquially as 3D printing\\x9D, opens the possibility for novel cavity designs which cannot be implemented through conventional methods. We present preliminary investigations of superconducting cavities made through a selective laser melting process, which compacts a granular powder via a high-power laser according to a digitally defined geometry. Initial work suggests that assuming a loss model and numerically optimizing a geometry to minimize dissipation results in modest improvements in device performance. Furthermore, a subset of titanium alloys, particularly, a titanium, aluminum, vanadium alloy (Ti - 6Al - 4V) exhibits properties indicative of a high kinetic inductance material. This work is supported by LDRD 16-SI-004.

  11. Superconductivity and future accelerators

    International Nuclear Information System (INIS)

    Danby, G.T.; Jackson, J.W.

    1963-01-01

    For 50 years particle accelerators employing accelerating cavities and deflecting magnets have been developed at a prodigious rate. New accelerator concepts and hardware ensembles have yielded great improvements in performance and GeV/$. The great idea for collective acceleration resulting from intense auxiliary charged-particle beams or laser light may or may not be just around the corner. In its absence, superconductivity (SC) applied both to rf cavities and to magnets opened up the potential for very large accelerators without excessive energy consumption and with other economies, even with the cw operation desirable for colliding beams. HEP has aggressively pioneered this new technology: the Fermilab single ring 1 TeV accelerator - 2 TeV collider is near the testing stage. Brookhaven National Laboratory's high luminosity pp 2 ring 800 GeV CBA collider is well into construction. Other types of superconducting projects are in the planning stage with much background R and D accomplished. The next generation of hadron colliders under discussion involves perhaps a 20 TeV ring (or rings) with 40 TeV CM energy. This is a very large machine: even if the highest practical field B approx. 10T is used, the radius is 10x that of the Fermilab accelerator. An extreme effort to get maximum GeV/$ may be crucial even for serious consideration of funding

  12. Superconducting current transducer

    International Nuclear Information System (INIS)

    Kuchnir, M.; Ozelis, J.P.

    1990-10-01

    The construction and performance of an electric current meter that operates in liquid He and mechanically splits apart to permit replacement of the current carrying conductor is described. It permits the measurement of currents induced in a loop of superconducting cable and expeditious exchange of such loops. It is a key component for a short sample cable testing facility that requires no high current power supplies nor high current leads. Its superconducting pickup circuit involves a non-magnetic core toroidal split-coil that surrounds the conductor and a solenoid whose field is sensed by a Hall probe. This toroidal split-coil is potted inside another compensating toroidal split-coil. The C shaped half toroids can be separated and brought precisely together from outside the cryostat. The Hall probe is energized and sensed by a lock-in amplifier whose output drives a bipolar power supply which feeds the compensating coil. The output is the voltage across a resistor in this feedback circuit. Currents of up to 10 kA can be measured with a precision of 150 mA. 3 refs., 4 figs

  13. The Use of a Solid State Analog Television Transmitter as a Superconducting Electron Gun Power Amplifier

    Energy Technology Data Exchange (ETDEWEB)

    J.G. Kulpin, K.J. Kleman, R.A. Legg

    2012-07-01

    A solid state analog television transmitter designed for 200 MHz operation is being commissioned as a radio frequency power amplifier on the Wisconsin superconducting electron gun cavity. The amplifier consists of three separate radio frequency power combiner cabinets and one monitor and control cabinet. The transmitter employs rugged field effect transistors built into one kilowatt drawers that are individually hot swappable at maximum continuous power output. The total combined power of the transmitter system is 33 kW at 200 MHz, output through a standard coaxial transmission line. A low level radio frequency system is employed to digitally synthesize the 200 MHz signal and precisely control amplitude and phase.

  14. A 4096-pixel MAPS detector used to investigate the single-electron distribution in a Young–Feynman two-slit interference experiment

    Energy Technology Data Exchange (ETDEWEB)

    Gabrielli, A. [Istituto Nazionale di Fisica Nucleare, Bologna (Italy); Department of Physics, University of Bologna (Italy); Giorgi, F.M., E-mail: giorgi@bo.infn.it [Istituto Nazionale di Fisica Nucleare, Bologna (Italy); Semprini, N.; Villa, M.; Zoccoli, A. [Istituto Nazionale di Fisica Nucleare, Bologna (Italy); Department of Physics, University of Bologna (Italy); Matteucci, G.; Pozzi, G. [Department of Physics, University of Bologna (Italy); Frabboni, S. [Department of Physics, University of Modena and Reggio Emilia (Italy); CNR-Institute of Nanoscience-S3, Modena (Italy); Gazzadi, G.C. [CNR-Institute of Nanoscience-S3, Modena (Italy)

    2013-01-21

    A monolithic CMOS detector, made of 4096 active pixels developed for HEP collider experiments, has been used in the Young–Feynman two-slit experiment with single electrons. The experiment has been carried out by inserting two nanometric slits in a transmission electron microscope that provided the electron beam source and the electro-optical lenses for projecting and focusing the interference pattern on the sensor. The fast readout of the sensor, in principle capable to manage up to 10{sup 6} frames per second, allowed to record single-electron frames spaced by several empty frames. In this way, for the first time in a single-electron two-slit experiment, the time distribution of electron arrivals has been measured with a resolution of 165μs. In addition, high statistics samples of single-electron events were collected within a time interval short enough to be compatible with the stability of the system and coherence conditions of the illumination.

  15. Development of low noise preamplifier for the detection and position determination of single electrons in a Cerenkov Ring Imaging Detector by charge division

    International Nuclear Information System (INIS)

    Spencer, E.; Coyle, P.; Williams, D

    1987-10-01

    A preamplifier having 500 electrons noise (rms) has been developed for the detection and location of single electrons in a CRID detector at the SLD. A single channel contains preamp, RC-CR shaper, gain adjustment, driver, and calibration circuitry. Noise and linearity measurements are presented

  16. Project in fiscal 1988 for research and development of basic technologies in next generation industries. Research and development of superconducting materials and superconducting elements (Achievement report on research and development of high-temperature superconducting elements); 1988 nendo koon chodendo soshi no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1989-03-01

    With an objective of engineering utilization of superconducting materials in the electronics field, research and development has been inaugurated on superconducting elements having new functions. This paper summarizes the achievements in fiscal 1988. In the research of a superconducting element technology, researches were inaugurated on the four themes of the electric field effect type and charge injection type elements in the proximity effect type tri-terminal element, and low energy electron type and high energy electron type elements in the superconduction base type tri-terminal element. In bonding superconductors with semiconductors, discussions were given on a method to form both conductors by controlling oxygen concentrations of oxides having the same composition, and a method to laminate the superconductors on the semiconductors under super-high vacuum atmosphere. In the research of a new functional element technology, researches were inaugurated on the two themes of a single electron tunneling type tri-terminal element and a local potential tunneling type tri-terminal element. In addition, works were performed on epitaxial growth of high-quality superconducting films as a common basic technology, and such an assignment has been made clear as the necessity of controlling the crystalline azimuth. (NEDO)

  17. Failure rates for accelerated acceptance testing of silicon transistors

    Science.gov (United States)

    Toye, C. R.

    1968-01-01

    Extrapolation tables for the control of silicon transistor product reliability have been compiled. The tables are based on a version of the Arrhenius statistical relation and are intended to be used for low- and medium-power silicon transistors.

  18. Development of a Solid State RF Amplifier in the kW Regime for Application with Low Beta Superconducting RF Cavities

    CERN Document Server

    Piel, Christian; Borisov, A; Kolesov, Sergej; Piel, Helmut

    2005-01-01

    Projects based on the use of low beta superconducting cavities for ions are under operation or development at several labs worldwide. Often these cavities are individually driven by RF power sources in the kW regime. For an ongoing project a modular 2 kW, 176 MHz unconditionally stable RF amplifier for CW and pulsed operation was designed, built, and tested. Extended thermal analysis was used to develop a water cooling system in order to optimize the performance of the power transistors and other thermally loaded components. The paper will outline the design concept of the amplifier and present first results on the test of the amplifier with a superconducting cavity.

  19. Meissner effect in superconducting microtraps

    International Nuclear Information System (INIS)

    Cano, Daniel

    2009-01-01

    This thesis investigates the impact of the Meissner effect on magnetic microtraps for ultracold atoms near superconducting microstructures. This task has been accomplished both theoretically and experimentally. The Meissner effect distorts the magnetic fields near superconducting surfaces, thus altering the parameters of magnetic microtraps. Both computer simulations and experimental measurements demonstrate that the Meissner effect shortens the distance between the magnetic microtrap and the superconducting surface, reduces the magnetic-field gradients and dramatically lowers the trap depth. A novel numerical method for calculating magnetic fields in atom chips with superconducting microstructures has been developed. This numerical method overcomes the geometrical limitations of other calculation techniques and can solve superconducting microstructures of arbitrary geometry. The numerical method has been used to calculate the parameters of magnetic microtraps in computer-simulated chips containing thin-film wires. Simulations were carried out for both the superconducting and the normal-conducting state, and the differences between the two cases were analyzed. Computer simulations have been contrasted with experimental measurements. The experimental apparatus generates a magnetic microtrap for ultracold Rubidium atoms near a superconducting Niobium wire of circular cross section. The design and construction of the apparatus has met the challenge of integrating the techniques for producing atomic quantum gases with the techniques for cooling solid bodies to cryogenic temperatures. By monitoring the position of the atom cloud, one can observe how the Meissner effect influences the magnetic microtrap. (orig.)

  20. Superconductivity in the 1990's

    International Nuclear Information System (INIS)

    Stekly, Z.J.J.

    1990-01-01

    Superconducting magnets, coils or windings are the basis for a range of major applications in the energy area such as energy storage in superconducting coils, magnets for fusion research, and rotating machinery. Other major applications of superconductivity include high energy physics where 1000 superconducting magnets are operated continuously in the Tevatron at Fermilab in Illinois, over 12,000 superconducting magnets will be required for the superconducting Super Collider being build near Dallas. The largest commercial application of superconductors is in magnets for magnetic resonance imaging (MRI) - a new medical diagnostic imaging technique with about 2,000 systems installed worldwide. These form a sizable technology base on which to evaluate and push forward applications such as magneto hydrodynamic propulsion of seagoing vessels. The attractiveness of which depends ultimately on the characteristics of the superconducting magnet. The magnet itself is a combination of several technology areas - the conductors, magnetics, structures and cryogenics. This paper reviews state-of-the-art in each of the technology areas as they relate to superconductors