WorldWideScience

Sample records for submillimeter wave transistors

  1. T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

    Science.gov (United States)

    Fung, Andy; Samoska, Lorene; Velebir, Jim; Siege, Peter; Rodwell, Mark; Paidi, Vamsi; Griffth, Zach; Urteaga, Miguel; Malik, Roger

    2004-01-01

    We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

  2. Filters for Submillimeter Electromagnetic Waves

    Science.gov (United States)

    Berdahl, C. M.

    1986-01-01

    New manufacturing process produces filters strong, yet have small, precise dimensions and smooth surface finish essential for dichroic filtering at submillimeter wavelengths. Many filters, each one essentially wafer containing fine metal grid made at same time. Stacked square wires plated, fused, and etched to form arrays of holes. Grid of nickel and tin held in brass ring. Wall thickness, thickness of filter (hole depth) and lateral hole dimensions all depend upon operating frequency and filter characteristics.

  3. Submillimeter Wave Antenna With Slow Wave Feed Line

    DEFF Research Database (Denmark)

    Zhurbenko, Vitaliy; Krozer, Viktor; Kotiranta, Mikko

    2009-01-01

    Submillimeter wave radiation, which is also referred to as terahertz radiation, has not been extensively explored until recently due to a lack of reliable components and devices in this frequency range. Current advances in technology have made it possible to explore this portion of the electromag...

  4. Advanced Amplifier Based Receiver Front Ends for Submillimeter-Wave-Sounders Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Develop high electron mobility transistor (HEMT) amplifier based heterodyne radiometers to provide high sensitivity at millimeter and submillimeter wavelengths with...

  5. Linewidth of submillimeter wave flux-flow oscillators

    DEFF Research Database (Denmark)

    Koshelets, V.P.; Shitov, S.V.; Shchukin, A.V.

    1996-01-01

    A reliable technique for wide band measurements of the spectral linewidth of superconducting oscillators integrated on-chip with superconductor-insulator-superconductor (SIS) detectors has been, developed, The spectral linewidth of flux-flow oscillators (FFO) based on the unidirectional and visco...... reference source has been demonstrated. The proposed technique may improve the sensitivity, frequency resolution, and stability of the fully superconducting integrated submillimeter wave receiver. (C) 1996 American Institute of Physics....

  6. Superconducting submillimeter and millimeter wave detectors

    Energy Technology Data Exchange (ETDEWEB)

    Nahum, M.

    1992-10-20

    The series of projects described in this dissertation was stimulated by the discovery of high temperature superconductivity. Our goal was to develop useful applications which would be competitive with the current state of technology. The high-[Tc] microbolometer was developed into the most sensitive direct detector of millimeter waves, when operated at liquid nitrogen temperatures. The thermal boundary resistance of thin YBa[sub 2]Cu[sub 3]0[sub 7-[delta

  7. Superconducting submillimeter and millimeter wave detectors

    Energy Technology Data Exchange (ETDEWEB)

    Nahum, Michael [Univ. of California, Berkeley, CA (United States)

    1992-10-20

    The series of projects described in this dissertation was stimulated by the discovery of high temperature superconductivity. Our goal was to develop useful applications which would be competitive with the current state of technology. The high-Tc microbolometer was developed into the most sensitive direct detector of millimeter waves, when operated at liquid nitrogen temperatures. The thermal boundary resistance of thin YBa2Cu307-δ films was subsequently measured and provided direct evidence for the bolometric response of high-Tc films to fast (ns) laser pulses. The low-Tc microbolometer was developed and used to make the first direct measurements of the frequency dependent optical efficiency of planar lithographed antennas. The hot-electron microbolometer was invented less than a year prior to the writing of this dissertation. Our analysis, presented here, indicates that it should be possible to attain up to two orders of magnitude higher sensitivity than that of the best available direct detectors when operated at the same temperature. The temperature readout scheme for this device could also be used to measure the intrinsic interaction between electrons and phonons in a metal with a sensitivity that is five orders of magnitude better than in previous measurements. Preliminary measurements of quasiparticle trapping effects at the interface between a metal and a superconductor are also presented.

  8. InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

    Science.gov (United States)

    Deal, William R.; Chattopadhyay, Goutam

    2012-01-01

    The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

  9. The role of THz and submillimeter wave technology in DHS

    Science.gov (United States)

    Coty, Thomas; Fuller-Tedeschi, Anna

    2011-06-01

    THz and submillimeter wave technology is of great interest to DHS S&T due to the non-ionizing and clothing penetrating properties of the spectral region. Imaging in the region allows for standoff imaging of concealed threats such as Improvised Explosive Devices (IED) at operationally relevant distances. DHS S&T is investing in this area with the development of components such as detectors and sources for active imaging as well as full sensor systems in the future. The fundamental characterization of the region is also being explored with DHS funding by imaging well-characterized rough surface scattering targets. Analysis of these images will yield data to be used in evaluating assumptions currently made in current performance models. This along with the relevant field applications will be addressed.

  10. Compact Receiver Front Ends for Submillimeter-Wave Applications

    Science.gov (United States)

    Mehdi, Imran; Chattopadhyay, Goutam; Schlecht, Erich T.; Lin, Robert H.; Sin, Seth; Peralta, Alejandro; Lee, Choonsup; Gill, John J.; Gulkis, Samuel; Thomas, Bertrand C.

    2012-01-01

    The current generation of submillimeter-wave instruments is relatively mass and power-hungry. The receiver front ends (RFEs) of a submillimeter instrument form the heart of the instrument, and any mass reduction achieved in this subsystem is propagated through the instrument. In the current implementation, the RFE consists of different blocks for the mixer and LO circuits. The motivation for this work is to reduce the mass of the RFE by integrating the mixer and LO circuits in one waveguide block. The mixer and its associated LO chips will all be packaged in a single waveguide package. This will reduce the mass of the RFE and also provide a number of other advantages. By bringing the mixer and LO circuits close together, losses in the waveguide will be reduced. Moreover, the compact nature of the block will allow for better thermal control of the block, which is important in order to reduce gain fluctuations. A single waveguide block with a 600- GHz RFE functionality (based on a subharmonically pumped Schottky diode pair) has been demonstrated. The block is about 3x3x3 cubic centimeters. The block combines the mixer and multiplier chip in a single package. 3D electromagnetic simulations were carried out to design the waveguide circuit around the mixer and multiplier chip. The circuit is optimized to provide maximum output power and maximum bandwidth. An integrated submillimeter front end featuring a 520-600-GHz sub-harmonic mixer and a 260-300-GHz frequency tripler in a single cavity was tested. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional metal-machined blocks. Measurement results on the metal block give best DSB (double sideband) mixer noise temperature of 2,360 K and conversion losses of 7.7 dB at 520 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer is between 30 and 50 mW.

  11. Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers

    Science.gov (United States)

    Lin, Robert H.; Schlecht, Erich T.; Chattopadhyay, Goutam; Gill, John J.; Mehdi, Imran; Siegel, Peter H.; Ward, John S.; Lee, Choonsup; Thomas, Bertrand C.; Maestrini, Alain

    2010-01-01

    The planar GaAs Shottky diode frequency multiplier is a critical technology for the local oscillator (LO) for submillimeter- wave heterodyne receivers due to low mass, tenability, long lifetime, and room-temperature operation. The use of a W-band (75-100 GHz) power amplifier followed by a frequency multiplier is the most common for submillimeter-wave sources. Its greatest challenge is to provide enough input power to the LO for instruments onboard future planetary missions. Recently, JPL produced 800 mW at 92.5 GHz by combining four MMICs in parallel in a balanced configuration. As more power at W-band is available to the multipliers, their power-handling capability be comes more important. High operating temperatures can lead to degradation of conversion efficiency or catastrophic failure. The goal of this innovation is to reduce the thermal resistance by attaching diamond film as a heat-spreader on the backside of multipliers to improve their power-handling capability. Polycrystalline diamond is deposited by hot-filament chemical vapor deposition (CVD). This diamond film acts as a heat-spreader to both the existing 250- and 300-GHz triplers, and has a high thermal conductivity (1,000-1,200 W/mK). It is approximately 2.5 times greater than copper (401 W/mK) and 20 times greater than GaAs (46 W/mK). It is an electrical insulator (resistivity approx. equals 10(exp 15) Ohms-cm), and has a low relative dielectric constant of 5.7. Diamond heat-spreaders reduce by at least 200 C at 250 mW of input power, compared to the tripler without diamond, according to thermal simulation. This superior thermal management provides a 100-percent increase in power-handling capability. For example, with this innovation, 40-mW output power has been achieved from a 250-GHz tripler at 350-mW input power, while the previous triplers, without diamond, suffered catastrophic failures. This breakthrough provides a stepping-stone for frequency multipliers-based LO up to 3 THz. The future work

  12. Antiferromagnetic Spin Wave Field-Effect Transistor

    Science.gov (United States)

    Cheng, Ran; Daniels, Matthew W.; Zhu, Jian-Gang; Xiao, Di

    2016-01-01

    In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field-effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. Our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale. PMID:27048928

  13. Novel transmission lines for the submillimeter-wave region

    Science.gov (United States)

    Katehi, Linda P. B.

    1992-01-01

    Accounts are given of the two approaches to the design of low-loss sub-mm-wave transmission lines for intelligent computer control guidance, command systems for space applications, and sensors operating in an optically opaque environment. These are: (1) the extension of the mm-wave monolithic technology to higher frequencies, although this approach is restricted to the lower end of the sub-mm spectrum, up to 500 GHz, due to ohmic losses; and (2) the extension of optical techniques to lower frequencies. This second approach is also limited, to the higher end of the sub-mm spectrum. Available characterizations of these technologies' electrical properties are presented.

  14. Observational Approach to Molecular Cloud Evolutation with the Submillimeter-Wave CI Lines

    Science.gov (United States)

    Oka, T.; Yamamoto, S.

    Neutral carbon atoms (CI) play important roles both in chemistry and cooling processes of interstellar molecular clouds. It is thus crucial to explore its large area distribution to obtain information on formation processes and thermal balance of molecular clouds. However, observations of the submillimeter-wave CI lines have been limited to small areas around some representative objects. We have constructed a 1.2 m submillimeter-wave telescope at the summit of Mt.Fuji. The telescope was designed for the exclusive use of surveying molecular clouds in two submillimeter-wave CI lines, 3 P1 -3 P0 (492GHz) and 3 P2 -3 P1 (809 GHz), of atomic carbon. A superconductor-insulator-superconductor (SIS) mixer receiver was equipped on the Nasmyth focus of the telescope. The receiver noise temperatures [Trx(DSB)] are 300 K and 1000 K for the 492 GHz and the 809 GHz mixers, respectively. The intermediate frequency is centered at 2 GHz, having a 700 MHz bandwidth. An acousto-optical spectrometer (AOS) with 1024 channel outputs is used as a receiver backend. The telescope was installed at Nishi-yasugawara (alt. 3725 m), which is 200 m north of the highest peak, Kengamine (3776 m), in July 1998. It has b en operatede successfully during 4 observing seasons in a remote way from the Hongo campus of the University of Tokyo. We have already observed more than 40 square degrees of the sky with the CI 492 GHz line. The distribution of CI emission is found to be different from those of the 13 CO or C1 8 O emission in some clouds. These differences are discussed in relation to formation processes of molecular clouds.

  15. Study of optical output couplers for submillimeter wavelength backward-wave oscillators (BWO's)

    Science.gov (United States)

    Cook, Jerry D.; Stankiewicz, Norbert; Podany, Mark

    1989-01-01

    Several scaled experiments of optical output couplers for submillimeter backward-wave oscillators (BWOs). Various designs of planar antennas (Vivaldi horns) lens-feed systems (hyperhemispherical lens) were constructed and tested between 20 and 100 GHz using a spectrum analyzer. The lens system was also tested at 337 GHz using a CO2 pumped FIR laser. It is found that Vivaldi horns have unsatisfactory resonances, perhaps because the horns studied were relatively short. Several techniques to maximize and flatten the frequency response of these horns are presented. The results suggest that alternate coupling schemes are superior to Vivaldi horns.

  16. Metal-mesh achromatic half-wave plate for use at submillimeter wavelengths.

    Science.gov (United States)

    Pisano, Giampaolo; Savini, Giorgio; Ade, Peter A R; Haynes, Vic

    2008-11-20

    A metal-mesh achromatic half-wave plate (HWP) has been designed, manufactured, and tested for potential use in millimeter and submillimeter astronomical instruments. The prototype device presented here is based on a 12-grid Shatrow [IEEE Trans. Antennas Propag. 43, 109 (1995)] recipe to operate over the frequency range of 120-180 GHz. Transmission line modeling and finite-element analysis [Ansoft HFSS website: http://www.ansoft.com/hfss/] were used to optimize the design geometrical parameters in terms of the device transmission, reflection, absorption, phase-shift, and cross-polarization as a function of frequency. The resulting prototype device was constructed and characterized using incoherent radiation from a polarizing Fourier transform spectrometer to explore its frequency and polarization behavior. These measurements are shown to be in excellent agreement with the models. Lists of the achieved HWP performance characteristics are reported.

  17. EPR and AFMR of Bi2CuO4 in Submillimeter Wave Region

    Science.gov (United States)

    Ohta, Hitoshi; Yoshida, Kazuhiro; Matsuya, Takashi; Nanba, Takao; Motokawa, Mitsuhiro; Yamada, Kazuyoshi; Endoh, Yasuo; Hosoya, Shoichi

    1992-08-01

    Paramagnetic and antiferromagnetic resonance have been observed in single crystals of Bi2CuO4 in submillimeter wave region using pulsed magnetic fields at temperatures from 4.2 K to 265 K. At the paramagnetic state, g-values have been determined to be g//{=}2.26± 0.01 and g\\bot{=}2.04± 0.01. The angular independent line-widths are 0.37± 0.03 T which is quantitatively explained by the dipole interaction and anisotropic exchange interaction. An antiferromagnetic resonance mode of planer type antiferromagnet has been observed below the Néel temperature and explained by the conventional antiferromagnetic theory.

  18. A low-cost fabrication method for sub-millimeter wave GaAs Schottky diode

    Science.gov (United States)

    Jenabi, Sarvenaz; Deslandes, Dominic; Boone, Francois; Charlebois, Serge A.

    2017-10-01

    In this paper, a submillimeter-wave Schottky diode is designed and simulated. Effect of Schottky layer thickness on cut-off frequency is studied. A novel microfabrication process is proposed and implemented. The presented microfabrication process avoids electron-beam (e-beam) lithography which reduces the cost. Also, this process provides more flexibility in selection of design parameters and allows significant reduction in the device parasitic capacitance. A key feature of the process is that the Schottky contact, the air-bridges, and the transmission lines, are fabricated in a single lift-off step. This process relies on a planarization method that is suitable for trenches of 1-10 μm deep and is tolerant to end-point variations. The fabricated diode is measured and results are compared with simulations. A very good agreement between simulation and measurement results are observed.

  19. Demonstration of a phase-lockable microwave to submillimeter wave sweeper

    Science.gov (United States)

    Waltman, Steve B.; Hollberg, Leo W.; McIntosh, Alexander K.; Brown, Elliott R.

    1996-12-01

    The development of low-temperature-grown GaAs photomixers enables the construction of a microwave to submillimeter- wave source capable of large frequency sweeps. By utilizing semiconductor diode lasers to drive the photomixer, this source is all solid-state and compact, and has small power consumption. Frequency stabilization of the semiconductor diode lasers allows this source to be phase-locked to an external microwave reference. Two 805 nm extended-cavity- diode lasers are mixed in a low-temperature-grown GaAs photoconductive photomixer. The difference-frequency mixing product is radiated by a planar spiral antenna and collimated by a Si lens. This output is phase-locked to a microwave reference by downconverting it in a whisker- contacted Schottky-barrier diode harmonic mixer and using the output to offset-phase-lock one laser to the other. The photomixer output power is 300 nW at 200 GHz and 10 nW at 1.6 THz, as measured by a 4 K InSb bolometer calibrated with a methanol laser and a power meter at 526 and 812 GHz.

  20. Superconducting Resonator Spectrometer for Millimeter- and Submillimeter-Wave Astrophysics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — "We propose to develop a novel ultra-compact spectrograph-on-a-chip for the submillimeter and millimeter waveband. SuperSpec uses planar lithographed superconducting...

  1. A retrieval algorithm of hydrometer profile for submillimeter-wave radiometer

    Science.gov (United States)

    Liu, Yuli; Buehler, Stefan; Liu, Heguang

    2017-04-01

    Vertical profiles of particle microphysics perform vital functions for the estimation of climatic feedback. This paper proposes a new algorithm to retrieve the profile of the parameters of the hydrometeor(i.e., ice, snow, rain, liquid cloud, graupel) based on passive submillimeter-wave measurements. These parameters include water content and particle size. The first part of the algorithm builds the database and retrieves the integrated quantities. Database is built up by Atmospheric Radiative Transfer Simulator(ARTS), which uses atmosphere data to simulate the corresponding brightness temperature. Neural network, trained by the precalculated database, is developed to retrieve the water path for each type of particles. The second part of the algorithm analyses the statistical relationship between water path and vertical parameters profiles. Based on the strong dependence existing between vertical layers in the profiles, Principal Component Analysis(PCA) technique is applied. The third part of the algorithm uses the forward model explicitly to retrieve the hydrometeor profiles. Cost function is calculated in each iteration, and Differential Evolution(DE) algorithm is used to adjust the parameter values during the evolutionary process. The performance of this algorithm is planning to be verified for both simulation database and measurement data, by retrieving profiles in comparison with the initial one. Results show that this algorithm has the ability to retrieve the hydrometeor profiles efficiently. The combination of ARTS and optimization algorithm can get much better results than the commonly used database approach. Meanwhile, the concept that ARTS can be used explicitly in the retrieval process shows great potential in providing solution to other retrieval problems.

  2. Solar Flash Sub-Millimeter Wave Range Spectrum Part Radiation Modeling

    Directory of Open Access Journals (Sweden)

    V. Yu. Shustikov

    2015-01-01

    Full Text Available Currently, solar flares are under observation on the RT-7.5 radio telescope of BMSTU. This telescope operates in a little-studied range of the spectrum, at wavelengths of 3.2 and 2.2 mm (93 and 140 GHz, thereby providing unique information about parameters of the chromosphere plasma and zone of the temperature minimum. Observations on various instruments provided relatively small amount of data on the radio emission flare at frequencies close to 93 GHz, and at frequency of 140 GHz such observations were not carried out. For these reasons, data collected from the RT-7.5 radio telescope are of high value (Shustikov et al., 2012.This work describes modeling and gives interpretation of the reason for raising flux density spectrum of sub-millimeter radio frequency emission using as an example the GOES flare of class M 5.3 occurred on 04.07.2012 in the active region 11515. This flare was observed on the RT-7.5 radio telescope of BMSTU and was described by Shustikov et al. (2012 and by Smirnova et al. (2013, where it has been suggested that the reason for raising radio frequency emission is a bremsstrahlung of the thermal electrons in the hot plasma of the solar chromosphere. Rough estimates of the plasma temperature at the flare source were obtained.This paper proposes model calculations of the flux density spectrum of the sub-millimeter radio emission based on the gyrosynchrotron Fleischman-Kuznetsov code (Fleishman & Kuznetsov, 2010. Section 1 briefly describes observational data, tools and processing methods used in the work. Section 2 shows results of modeling the flare radio emission. Section 3 discusses results and conclusions.Numerical modeling the sub-millimeter part of the spectrum of the radio flux density for the GOES flare of class M5.3 has been carried out. This flare occurred in the active region 11515 on 04.07.2012. Modeling was based on the observations on the BMSTU’s RT-7.5 radio telescope.The paper draws conclusion based on the

  3. Transistors

    CERN Document Server

    Kendall, E J M

    2013-01-01

    Transistors covers the main thread of transistor development. This book is organized into 2 parts encompassing 19, and starts with an overview of the semi-conductor physics pertinent to the understanding of transistors, as well as features and applications of the point contact devices and junction devices. The subsequent part deals with the modulation of conductance of thin films of conductors by surface charges, the metal-semi conductor, and the semi-conductor triode. These topics are followed by discussions on the nature of the forward current, physical principles in transistor, the hole inj

  4. A Compact 600 GHz Electronically Tunable Vector Measurement System for Submillimeter Wave Imaging

    Science.gov (United States)

    Dengler, Robert; Maiwald, Frank; Siegel, Peter H.

    2006-01-01

    The design of a complete vector measurement system being tested over 560-635 GHz is presented. The topics include: 1) Current State-of-the-Art in Vector Measurements; 2) Submillimeter Active Imaging Requirements; 3) 600 GHz Vector Measurement System; 4) 450 MHz IF Signal; 5) 450 MHz IF signal @ 1 kHz Res. BW; 6) 450 MHz IF Signal Mixed with Shifted 450 MHz Reference Signal; 7) Reference Signal Offset Generator; 8) Cavity Bandpass Filter; 9) Miniature Multistage Helical Filter; 10) X36 450 MHz Multiplier; 11) 600 GHz Test Setup; 12) 600 GHz Transmit Module; 13) 600 GHz Receive Module; 14) Performance Tests: Amplitude Stability & Dynamic Range; 15) Performance Tests: Phase Stability; 16) Stability at Imaging Bandwidths; 17) Phase Measurement Verification; and 18) The Next Step: Imaging.

  5. Submillimeter wave GaAs Schottky diode application based study and optimization for 0.1-1.5 THz

    Science.gov (United States)

    Jenabi, Sarvenaz; Malekabadi, Ali; Deslandes, Dominic; Boone, Francois; Charlebois, Serge A.

    2017-08-01

    In this paper, a design and optimization method for submillimeter-wave Schottky diode is proposed. Parasitic capacitance is significantly reduced to under 20% of the total capacitance of the diode. The parasitic capacitance value is measured to be 0.6 fF for 1 μm anode radius which increased the cut-off frequency to 1.5 THz. A corresponding microfabrication process that provides higher degrees of freedom for the anode diameter, air-bridge dimensions and distance to the substrate is introduced and implemented. The DC and RF measurements are provided and compared with the simulations. In order to provide a better understanding of the diode behavior, the limiting factors of the cut-off frequency for different applications are studied and compared. For the mixer/multiplier mode, an improved and expanded formulation for calculation of the cut-off frequency is introduced. It is shown that the usable voltage bias range (with acceptable cut-off frequency) is limited by the exponential reduction of junction resistance, Rj , in mixer/multiplier mode.

  6. A submillimeter VLBI array

    Energy Technology Data Exchange (ETDEWEB)

    Weintroub, Jonathan [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA (United States)], E-mail: jweintroub@cfa.harvard.edu

    2008-10-15

    A VLBI array operating at {lambda} 1.3 mm and 0.8 mm is being designed using existing submillimeter telescopes as ad-hoc stations. Initial three station {lambda} = 1.3 mm observations of SgrA* and other AGN have produced remarkable results, which are reported by Doeleman elsewhere in this proceedings. Future observations are planned with an enhanced array which has longer baselines, more stations, and greater sensitivity. At {lambda} = 0.8 mm and on the long baselines, the array will have about a 20 {mu}as angular resolution which equals the diameter of the event horizon of the massive black hole in SgrA*. Candidate single dish facilities include the Arizona Radio Observatory Submillimeter Telescope (SMT) in Arizona, the Caltech Submillimeter Observatory (CSO) and the James Clerk Maxwell telescope (JCMT) in Hawaii, the Large Millimeter Telescope (LMT) in Mexico, ASTE and APEX in Chile, and the IRAM 30 m in Spain; interferometers include the Submillimeter Array (SMA) in Hawaii, the Combined Array for Research in Millimeter-wave Astronomy (CARMA) in California, IRAM PdB Interferometer in France, and the Atacama Large Millimeter Array (ALMA) in Chile. I will discuss the techniques we have developed for phasing interferometric arrays to act as single VLBI station. A strategy for detection of short (10s) time-scale source variability using VLBI closure phase will be described.

  7. The Level 2 research product algorithms for the Superconducting Submillimeter-Wave Limb-Emission Sounder (SMILES

    Directory of Open Access Journals (Sweden)

    P. Baron

    2011-10-01

    Full Text Available This paper describes the algorithms of the level-2 research (L2r processing chain developed for the Superconducting Submillimeter-Wave Limb-Emission Sounder (SMILES. The chain has been developed in parallel to the operational chain for conducting researches on calibration and retrieval algorithms. L2r chain products are available to the scientific community. The objective of version 2 is the retrieval of the vertical distribution of trace gases in the altitude range of 18–90 km. A theoretical error analysis is conducted to estimate the retrieval feasibility of key parameters of the processing: line-of-sight elevation tangent altitudes (or angles, temperature and ozone profiles. While pointing information is often retrieved from molecular oxygen lines, there is no oxygen line in the SMILES spectra, so the strong ozone line at 625.371 GHz has been chosen. The pointing parameters and the ozone profiles are retrieved from the line wings which are measured with high signal to noise ratio, whereas the temperature profile is retrieved from the optically thick line center. The main systematic component of the retrieval error was found to be the neglect of the non-linearity of the radiometric gain in the calibration procedure. This causes a temperature retrieval error of 5–10 K. Because of these large temperature errors, it is not possible to construct a reliable hydrostatic pressure profile. However, as a consequence of the retrieval of pointing parameters, pressure induced errors are significantly reduced if the retrieved trace gas profiles are represented on pressure levels instead of geometric altitude levels. Further, various setups of trace gas retrievals have been tested. The error analysis for the retrieved HOCl profile demonstrates that best results for inverting weak lines can be obtained by using narrow spectral windows.

  8. Continuous-Wave Single-Photon Transistor Based on a Superconducting Circuit

    DEFF Research Database (Denmark)

    Kyriienko, Oleksandr; Sørensen, Anders Søndberg

    2016-01-01

    We propose a microwave frequency single-photon transistor which can operate under continuous wave probing and represents an efficient single microwave photon detector. It can be realized using an impedance matched system of a three level artificial ladder-type atom coupled to two microwave cavities...... and the appearance of a photon flux leaving the second cavity through a separate input-output port. The proposal does not require time variation of the probe signals, thus corresponding to a passive version of a single-photon transistor. The resulting device is robust to qubit dephasing processes, possesses low dark...

  9. Rapid Sintering of Silica Xerogel Ceramic Derived from Sago Waste Ash Using Sub-millimeter Wave Heating with a 300 GHz CW Gyrotron

    Science.gov (United States)

    Aripin, Haji; Mitsudo, Seitaro; Sudiana, I. Nyoman; Tani, Shinji; Sako, Katsuhide; Fujii, Yutaka; Saito, Teruo; Idehara, Toshitaka; Sabchevski, Sliven

    2011-06-01

    In this paper, we present and discuss experimental results from a microwave sintering of a silica-glass ceramic, produced from a silica xerogel extracted from a sago waste ash. As a radiation source for the microwave heating a sub-millimeter wave gyrotron (Gyrotron FU CW I) with an output frequency of 300 GHz has been used. The powders of silica xerogel have been dry pressed and then sintered at temperatures ranging from 300°C to 1500°C. The influence of the sintering temperature on the technological properties such as porosity and bulk density was studied in detail. Furthermore, X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy have been used in order to study the structure of the produced silica glass-ceramics. It has been found that the silica xerogel crystallizes at a temperature of 800°C, which is about 200°C lower than the one observed in the conventional process. The silica xerogel samples sintered by their irradiation with a sub-millimeter wave at 900°C for 18 minutes are fully crystallized into a silica glass-ceramic with a density of about 2.2 g/cm3 and cristobalite as a major crystalline phase. The results obtained in this study allow one to conclude that the microwave sintering with sub-millimeter waves is an appropriate technological process for production of silica glass-ceramics from a silica xerogel and is characterized with such advantages as shorter times of the thermal cycle, lower sintering temperatures and higher quality of the final product.

  10. Full-Wave Analysis of Traveling-Wave Field-Effect Transistors Using Finite-Difference Time-Domain Method

    Directory of Open Access Journals (Sweden)

    Koichi Narahara

    2012-01-01

    Full Text Available Nonlinear transmission lines, which define transmission lines periodically loaded with nonlinear devices such as varactors, diodes, and transistors, are modeled in the framework of finite-difference time-domain (FDTD method. Originally, some root-finding routine is needed to evaluate the contributions of nonlinear device currents appropriately to the temporally advanced electrical fields. Arbitrary nonlinear transmission lines contain large amount of nonlinear devices; therefore, it costs too much time to complete calculations. To reduce the calculation time, we recently developed a simple model of diodes to eliminate root-finding routines in an FDTD solver. Approximating the diode current-voltage relation by a piecewise-linear function, an extended Ampere's law is solved in a closed form for the time-advanced electrical fields. In this paper, we newly develop an FDTD model of field-effect transistors (FETs, together with several numerical examples that demonstrate pulse-shortening phenomena in a traveling-wave FET.

  11. The cryomechanical design of MUSIC: a novel imaging instrument for millimeter-wave astrophysics at the Caltech Submillimeter Observatory

    Science.gov (United States)

    Hollister, Matthew I.; Czakon, Nicole G.; Day, Peter K.; Downes, Thomas P.; Duan, Ran; Gao, Jiansong; Glenn, Jason; Golwala, Sunil R.; LeDuc, Henry G.; Maloney, Philip R.; Mazin, Benjamin A.; Nguyen, Hien Trong; Noroozian, Omid; Sayers, Jack; Schlaerth, James; Siegel, Seth; Vaillancourt, John E.; Vayonakis, Anastasios; Wilson, Philip; Zmuidzinas, Jonas

    2010-07-01

    MUSIC (Multicolor Submillimeter kinetic Inductance Camera) is a new facility instrument for the Caltech Submillimeter Observatory (Mauna Kea, Hawaii) developed as a collaborative effect of Caltech, JPL, the University of Colorado at Boulder and UC Santa Barbara, and is due for initial commissioning in early 2011. MUSIC utilizes a new class of superconducting photon detectors known as microwave kinetic inductance detectors (MKIDs), an emergent technology that offers considerable advantages over current types of detectors for submillimeter and millimeter direct detection. MUSIC will operate a focal plane of 576 spatial pixels, where each pixel is a slot line antenna coupled to multiple detectors through on-chip, lumped-element filters, allowing simultaneously imaging in four bands at 0.86, 1.02, 1.33 and 2.00 mm. The MUSIC instrument is designed for closed-cycle operation, combining a pulse tube cooler with a two-stage Helium-3 adsorption refrigerator, providing a focal plane temperature of 0.25 K with intermediate temperature stages at approximately 50, 4 and 0.4 K for buffering heat loads and heat sinking of optical filters. Detector readout is achieved using semi-rigid coaxial cables from room temperature to the focal plane, with cryogenic HEMT amplifiers operating at 4 K. Several hundred detectors may be multiplexed in frequency space through one signal line and amplifier. This paper discusses the design of the instrument cryogenic hardware, including a number of features unique to the implementation of superconducting detectors. Predicted performance data for the instrument system will also be presented and discussed.

  12. Fast computation of the Narcissus reflection coefficient for the Herschel far-infrared/submillimeter-wave Cassegrain telescope

    Science.gov (United States)

    Lucke, Robert L.; Fischer, Jacqueline; Polegre, Arturo M.; Beintema, Douwe A.

    2005-10-01

    Placement of a scatter cone at the center of the secondary of a Cassegrain telescope greatly reduces Narcissus reflection. To calculate the remaining Narcissus reflection, a time-consuming physical optics code such as GRASP8 is often used to model the effects of reflection and diffraction. Fortunately, the Cassegrain geometry is sufficiently simple that a combination of theoretical analysis and Fourier propagation can yield rapid, accurate results at submillimeter wavelengths. We compare these results with those from GRASP8 for the heterodyne instrument for the far-infrared on the Herschel Space Observatory and confirm the effectiveness of the chosen scatter cone design.

  13. Millimeter and submillimeter wave ESR measurement of Ho{sub 2}Cu{sub 2}O{sub 5} aligned powder sample

    Energy Technology Data Exchange (ETDEWEB)

    Okubo, S. [Kobe Univ., Graduate School of Science and Technology, Kobe, Hyogo (Japan); Goto, T.; Tanaka, T.; Ohta, H. [Kobe Univ. (Japan). Dept. of Physics; Mogi, I.; Watanabe, K.; Motokawa, M. [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

    1999-07-01

    To gain information of anisotropy of Ho{sub 2}Cu{sub 2}O{sub 5} the aligned powder sample was prepared under the static high magnetic field of 5T. Millimeter and submillimeter wave ESR measurements of aligned Ho{sub 2}Cu{sub 2}O{sub 5} samples have been performed for the first time in the frequency region from 50 to 430 GHz using the pulsed magnetic field up to 16T at 1.8K. Antiferromagnetic resonances were observed clearly at 1.8K. AFMR modes of easy axis change at two critical fields. The temperature dependence measurements were also performed and the Neel temperature of the system is discussed. (author)

  14. Detection of Submillimeter-wave [C i] Emission in Gaseous Debris Disks of 49 Ceti and β Pictoris

    Energy Technology Data Exchange (ETDEWEB)

    Higuchi, Aya E.; Sakai, Nami [The Institute of Physical and Chemical Research (RIKEN), 2-1, Hirosawa, Wako-shi, Saitama 351-0198 (Japan); Sato, Aki; Tsukagoshi, Takashi; Momose, Munetake [College of Science, Ibaraki University, Bunkyo 2-1-1, Mito 310-8512 (Japan); Iwasaki, Kazunari [Department of Environmental Systems Science, Doshisha University, Tatara Miyakodani 1-3, Kyotanabe City, Kyoto 610-0394 (Japan); Kobayashi, Hiroshi; Ishihara, Daisuke; Watanabe, Sakae; Kaneda, Hidehiro [Department of Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8602 (Japan); Yamamoto, Satoshi, E-mail: aya.higuchi@riken.jp [Department of Physics, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

    2017-04-10

    We have detected [C i] {sup 3} P {sub 1}–{sup 3} P {sub 0} emissions in the gaseous debris disks of 49 Ceti and β Pictoris with the 10 m telescope of the Atacama Submillimeter Telescope Experiment, which is the first detection of such emissions. The line profiles of [C i] are found to resemble those of CO( J = 3–2) observed with the same telescope and the Atacama Large Millimeter/submillimeter Array. This result suggests that atomic carbon (C) coexists with CO in the debris disks and is likely formed by the photodissociation of CO. Assuming an optically thin [C i] emission with the excitation temperature ranging from 30 to 100 K, the column density of C is evaluated to be (2.2 ± 0.2) × 10{sup 17} and (2.5 ± 0.7) × 10{sup 16} cm{sup −2} for 49 Ceti and β Pictoris, respectively. The C/CO column density ratio is thus derived to be 54 ± 19 and 69 ± 42 for 49 Ceti and β Pictoris, respectively. These ratios are higher than those of molecular clouds and diffuse clouds by an order of magnitude. The unusually high ratios of C to CO are likely attributed to a lack of H{sub 2} molecules needed to reproduce CO molecules efficiently from C. This result implies a small number of H{sub 2} molecules in the gas disk, i.e., there is an appreciable contribution of secondary gas from dust grains.

  15. Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series

    KAUST Repository

    Elkhatib, Tamer A.

    2010-02-01

    We report on enhanced room-temperature detection of terahertz radiation by several connected field-effect transistors. For this enhanced nonresonant detection, we have designed, fabricated, and tested plasmonic structures consisting of multiple InGaAs/GaAs pseudomorphic high electron-mobility transistors connected in series. Results show a 1.63-THz response that is directly proportional to the number of detecting transistors biased by a direct drain current at the same gate-to-source bias voltages. The responsivity in the saturation regime was found to be 170 V/W with the noise equivalent power in the range of 10-7 W/Hz0.5. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by terahertz radiation in the transistor channel. © 2010 IEEE.

  16. Measurement of stratospheric and mesospheric winds with a submillimeter wave limb sounder: results from JEM/SMILES and simulation study for SMILES-2

    Science.gov (United States)

    Baron, Philippe; Manago, Naohiro; Ozeki, Hiroyuki; Irimajiri, Yoshihisa; Murtagh, Donal; Uzawa, Yoshinori; Ochiai, Satoshi; Shiotani, Masato; Suzuki, Makoto

    2015-10-01

    Satellite missions for measuring winds in the troposphere and thermosphere will be launched in a near future. There is no plan to observe winds in the altitude range between 30-90 km, though middle atmospheric winds are recognized as an essential parameter in various atmospheric research areas. Sub-millimetre limb sounders have the capability to fill this altitude gap. In this paper, we summarize the wind retrievals obtained from the Japanese Superconducting Submillimeter Wave Limb Emission Sounder (SMILES) which operated from the International Space Station between September 2009 and April 2010. The results illustrate the potential of such instruments to measure winds. They also show the need of improving the wind representation in the models in the Tropics, and globally in the mesosphere. A wind measurement sensitivity study has been conducted for its successor, SMILES-2, which is being studied in Japan. If it is realized, sub-millimeter and terahertz molecular lines suitable to determine line-of-sight winds will be measured. It is shown that with the current instrument definition, line-of-sight winds can be observed from 20 km up to more than 160 km. Winds can be retrieved with a precision better than 5 ms-1 and a vertical resolution of 2-3 km between 35-90 km. Above 90 km, the precision is better than 10 ms-1 with a vertical resolution of 3-5 km. Measurements can be performed day and night with a similar sensitivity. Requirements on observation parameters such as the antenna size, the satellite altitude are discussed. An alternative setting for the spectral bands is examined. The new setting is compatible with the general scientific objectives of the mission and the instrument design. It allows to improve the wind measurement sensitivity between 35 to 90 km by a factor 2. It is also shown that retrievals can be performed with a vertical resolution of 1 km and a precision of 5-10 ms-1 between 50 and 90 km.

  17. Resonant transitions between split energy levels triple-barrier nanostructures and their application perspectives in submillimeter-wave devices

    CERN Document Server

    Golant, E I

    2002-01-01

    A mathematical model has been developed for electronic coherent tunneling through the triple-barrier quantum-dimensional semiconductor heterostructures in the terahertz electric field. Using this model the frequency dependences of the negative dynamic conductivity for triple-barrier structures with coherent electron tunneling through the split energy levels are investigated. It has been shown that these structures can be employed in far-infrared coherent quantum lasers, the wave length being 600 mu m (5 THz)

  18. Relationships among classes of self-oscillating transistor parallel inverters. [dc to square wave converter circuits for power conditioning

    Science.gov (United States)

    Wilson, T. G.; Lee, F. C. Y.; Burns, W. W., III; Owen, H. A., Jr.

    1974-01-01

    A procedure is developed for classifying dc-to-square-wave two-transistor parallel inverters used in power conditioning applications. The inverters are reduced to equivalent RLC networks and are then grouped with other inverters with the same basic equivalent circuit. Distinction between inverter classes is based on the topology characteristics of the equivalent circuits. Information about one class can then be extended to another class using the basic oscillation theory and the concept of duality. Oscillograms from test circuits confirm the validity of the procedure adopted.

  19. Predictive of the quantum capacitance effect on the excitation of plasma waves in graphene transistors with scaling limit

    Science.gov (United States)

    Wang, Lin; Chen, Xiaoshuang; Hu, Yibin; Wang, Shao-Wei; Lu, Wei

    2015-04-01

    Plasma waves in graphene field-effect transistors (FETs) and nano-patterned graphene sheets have emerged as very promising candidates for potential terahertz and infrared applications in myriad areas including remote sensing, biomedical science, military, and many other fields with their electrical tunability and strong interaction with light. In this work, we study the excitations and propagation properties of plasma waves in nanometric graphene FETs down to the scaling limit. Due to the quantum-capacitance effect, the plasma wave exhibits strong correlation with the distribution of density of states (DOS). It is indicated that the electrically tunable plasma resonance has a power-dependent V0.8TG relation on the gate voltage, which originates from the linear dependence of density of states (DOS) on the energy in pristine graphene, in striking difference to those dominated by classical capacitance with only V0.5TG dependence. The results of different transistor sizes indicate the potential application of nanometric graphene FETs in highly-efficient electro-optic modulation or detection of terahertz or infrared radiation. In addition, we highlight the perspectives of plasma resonance excitation in probing the many-body interaction and quantum matter state in strong correlation electron systems. This study reveals the key feature of plasma waves in decorated/nanometric graphene FETs, and paves the way to tailor plasma band-engineering and expand its application in both terahertz and mid-infrared regions.Plasma waves in graphene field-effect transistors (FETs) and nano-patterned graphene sheets have emerged as very promising candidates for potential terahertz and infrared applications in myriad areas including remote sensing, biomedical science, military, and many other fields with their electrical tunability and strong interaction with light. In this work, we study the excitations and propagation properties of plasma waves in nanometric graphene FETs down to the

  20. The millimeter and submillimeter spectrum of CF(+)

    Science.gov (United States)

    Plummer, G. M.; Anderson, T.; Herbst, E.; De Lucia, F. C.

    1986-01-01

    The application of a recently described technique for producing significantly enhanced concentrations of molecular ions for spectroscopic study to the detection and measurement of the millimeter and submillimeter wave spectrum of CF(+) is reported. The experimental procedure is discussed, and the measured absorption frequencies are shown and compared with those calculated from spectral constants. These constants are given together with those from the infrared spectrum by Kawaguchi and Hirota (1985).

  1. Submillimeter Continuum Observations of Comets

    Science.gov (United States)

    Jewitt, David

    1998-01-01

    The aim of this proposal was to study the submillimeter continuum emission from comets. The study was based mainly on the exploitation of the world's leading submillimeter telescope, the JCMT (James Clerk Maxwell Telescope) on Mauna Kea. Submillimeter wavelengths provide a unique view of cometary physics for one main reason. The cometary size distribution is such that the scattering cross-section is dominated by small dust grains, while the mass is dominated by the largest particles. Submillimeter continuum radiation samples cometary particles much larger than those sampled by more common observations at shorter (optical and infrared) wavelengths and therefore provides a nearly direct measure of the cometary dust mass.

  2. HERTZ, A Submillimeter Polarimeter

    Science.gov (United States)

    Schleuning, D. A.; Dowell, C. D.; Hildebrand, R. H.; Platt, S. R.; Novak, G.

    1997-03-01

    We describe a 32 pixel polarimeter, Hertz, for use at the Caltech Submillimeter Observatory. We present polarization maps of the Orion molecular cloud (OMC-1) at 350 \\mum (46 detections) and 450 \\mum (19 detections) with 3\\sigma or better statistical significance. The 350 \\mum polarization ranges from 1.4 to 6.8% with a median value of 3.3%. The position angles are fairly uniform across the souce at an angle of \\sim30 degrees (east of north). We describe the design and performance characteristics of the polarimeter and discuss systematic effects due to telescope and instrumental polarization, atmospheric fluctuations, and reference beam flux. (SECTION: Astronomical Instrumentation)

  3. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  4. A Design of Terahertz Parallel Plate Dielectric Waveguide with Signal Line inserted for Ballistic Deflection Transistor Travelling Wave Amplifier

    Science.gov (United States)

    Wang, H.; Knepper, R.; Hossain, N.; Marthi, P.; Milithaler, J.-F.; Margala, M.

    2017-10-01

    In this paper a new waveguide design is proposed to be implemented as part of Ballistic Deflection Transistor (BDT) Traveling Wave Amplifier Design. The BDT is designed to be operated in the Terahertz regime. Due to its relatively low transconductance (gm=200µA/V), the entire structure will consist of ten stages, with 15 BDTs/stage, to reach a total gain of 30mA/V. In this case, the total length of the transmission line will be more than 400µm. We did the investigation for different structures and materials of the transmission line. For our Parallel Plate Dielectric Waveguide with Signal Line inserted (PPDWS) design, we are able to get an average loss of 0.46dB/mm at 0.8-1.4THz from ANSYS HFSS simulation. The return loss for input and output are better than -20dB at 0.8-1.7THz. Although it is designed for our future travelling wave amplifier, it can also be used for various other THz frequency applications.

  5. Arrays of Bolometers for Far-infrared and Submillimeter Astronomy

    Science.gov (United States)

    Chuss, D. T.; Allen, C. A.; Babu, S.; Benford, D. J.; Dotson, J. L.; Dowell, C. D.; Jhabvala, M.; Harper, D. A.; Moseley, S. Harvey; Silverberg, R. F.; Staguhn, J. G.; Voellmer, G.; Wollack, E. J.

    We describe 12 x 32 arrays of semiconducting cryogenic bolometers designed for use in far-infrared and submillimeter cameras. These 12 x 32 arrays are constructed from 1 x 32 monolithic pop-up detectors developed at NASA Goddard Space Flight Center. The pop-up technology allows the construction of large arrays with high filling factors that provide efficient use of space in the focal planes of far-infrared and submillimeter astronomical instruments. This directly leads to a significant decrease in integration time. The prototype array is currently operating in the second generation Submillimeter High Angular Resolution Camera (SHARC II), a facility instrument in use at the Caltech Submillimeter Observatory (CSO). The elements of this array employ a bismuth absorber coating and quarter wave backshort to optimize the bolometer absorption for passbands centered at 350 and 450 microns. A second array is to be installed in the High-resolution Airborne Widebandwidth Camera (HAWC), a far-infrared imaging camera for the Stratospheric Observatory for Infrared Astronomy (SOFIA). This array has been completed and is now awaiting integration into the HAWC test cryostat. HAWC is scheduled for commissioning in 2005. The HAWC array employs titanium-gold absorbers and is optimized for uniform absorption from 40 to 300 microns to accommodate all four of its far-infrared passbands. We describe the details of the HAWC array construction including the mechanical design and electrical characterization of the constituent linear arrays.

  6. SUBMILLIMETER LIGHTCURVES OF ASTEROIDS V1.0

    Data.gov (United States)

    National Aeronautics and Space Administration — Submillimeter lightcurves of large asteroids Ceres, Davida, Io, Juno, Pallas, Vesta, and Victoria, observed at the Heinrich-Hertz Submillimeter Telescope from...

  7. Submillimeter Array reveals molecular complexity of dying stars

    Science.gov (United States)

    Tomasz

    2018-01-01

    The unique capabilities of the Submillimeter Array (SMA) have allowed unprecedented studies of cool evolved stars at submillimeter wavelengths. In particular, the SMA now offers the possibility to image multiple molecular transitions at once, owing to the 32-GHz wide instantaneous bandwidth of SWARM, the SMA’s new correlator. Molecular gas located far and very close to the photosphere of an asymptotic-giant branch (AGB) star, a red supergiant, or a pre-planetary nebula can now be examined in transitions observed simultaneously from a wide range of energy levels. This allows a very detailed quantitative investigation of physical and chemical conditions around these variable objects. Several imaging line surveys have been obtained with the SMA to reveal the beautiful complexity of these evolved systems. The surveys resulted in first submillimeter-wave identifications of molecules of prime astrophysical interest, e.g. of TiO, TiO2, and of rotational transitions at excited vibrational states of CO. An overview of recent SMA observations of cool evolved stars will be given with an emphasize on the interferometric line surveys. We will demonstrate their importance in unraveling the mass-loss phenomena, propagation of shocks in the circumstellar medium, and production of dust at elevated temperatures. The SMA studies of these molecular factories have a direct impact on our understanding of the chemical evolution of the Galaxy and stellar evolution at low and high masses.

  8. VizieR Online Data Catalog: Sub-millimeter spectra of 2-hydroxyacetonitrile (Margules+, 2017)

    Science.gov (United States)

    Margules, L.; McGuire, B. A.; Senent, M. L.; Motiyenko, R. A.; Remijan, A.; Guillemin, J. C.

    2017-02-01

    Measured frequencies and residuals from the global fit of the submillimeter-wave data for 2-hydroxyacetonitrile and files used for SPFIT. Detailled explanations on SPFIT could be found at https://www.astro.uni-koeln.de/cdms/pickett (4 data files).

  9. Active Millimeter and Submillimeter Sensing Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The workshop will have three main objectives. The first will be to inventory the signatures and measurements that are desirable to make using submillimeter active...

  10. Faint Submillimeter Galaxies Behind Lensing Clusters

    Science.gov (United States)

    Hsu, Li-Yen; Lauchlan Cowie, Lennox; Barger, Amy J.; Desai, Vandana; Murphy, Eric J.

    2017-01-01

    Faint submillimeter galaxies are the major contributors to the submillimeter extragalactic background light and hence the dominant star-forming population in the dusty universe. Determining how much these galaxies overlap the optically selected samples is critical to fully account for the cosmic star formation history. Observations of massive cluster fields are the best way to explore this faint submillimeter population, thanks to gravitational lensing effects. We have been undertaking a lensing cluster survey with the SCUBA-2 camera on the James Clerk Maxwell Telescope to map nine galaxy clusters, including the northern five clusters in the HST Frontier Fields program. We have also been using the Submillimeter Array and the Very Large Array to determine the accurate positions of our detected sources. Our observations have discovered high-redshift dusty galaxies with far-infrared luminosities similar to that of the Milky Way or luminous infrared galaxies. Some of these galaxies are still undetected in deep optical and near-infrared images. These results suggest that a substantial amount of star formation in even the faint submillimeter population may be hidden from rest-frame optical surveys.

  11. Dielectric Covered Planar Antennas at Submillimeter Wavelengths for Terahertz Imaging

    Science.gov (United States)

    Chattopadhyay, Goutam; Gill, John J.; Skalare, Anders; Lee, Choonsup; Llombart, Nuria; Siegel, Peter H.

    2011-01-01

    Most optical systems require antennas with directive patterns. This means that the physical area of the antenna will be large in terms of the wavelength. When non-cooled systems are used, the losses of microstrip or coplanar waveguide lines impede the use of standard patch or slot antennas for a large number of elements in a phased array format. Traditionally, this problem has been solved by using silicon lenses. However, if an array of such highly directive antennas is to be used for imaging applications, the fabrication of many closely spaced lenses becomes a problem. Moreover, planar antennas are usually fed by microstrip or coplanar waveguides while the mixer or the detector elements (usually Schottky diodes) are coupled in a waveguide environment. The coupling between the antenna and the detector/ mixer can be a fabrication challenge in an imaging array at submillimeter wavelengths. Antennas excited by a waveguide (TE10) mode makes use of dielectric superlayers to increase the directivity. These antennas create a kind of Fabry- Perot cavity between the ground plane and the first layer of dielectric. In reality, the antenna operates as a leaky wave mode where a leaky wave pole propagates along the cavity while it radiates. Thanks to this pole, the directivity of a small antenna is considerably enhanced. The antenna consists of a waveguide feed, which can be coupled to a mixer or detector such as a Schottky diode via a standard probe design. The waveguide is loaded with a double-slot iris to perform an impedance match and to suppress undesired modes that can propagate on the cavity. On top of the slot there is an air cavity and on top, a small portion of a hemispherical lens. The fractional bandwidth of such antennas is around 10 percent, which is good enough for heterodyne imaging applications.The new geometry makes use of a silicon lens instead of dielectric quarter wavelength substrates. This design presents several advantages when used in the submillimeter-wave

  12. Magnetic bipolar transistor

    OpenAIRE

    Fabian, Jaroslav; Zutic, Igor; Sarma, S. Das

    2003-01-01

    A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin.

  13. Test Equipment Specifications Transistor

    OpenAIRE

    Didiek Andiana Ramadan; Drs. Linga Hermanto, MMSI Drs. Linga Hermanto, MMSI

    2005-01-01

    In this paper, we design a test apparatus Transistor Specification. Specification is atype of transistor is a transistor and common emitter current reinforcement value ( βDC ). The system will provide information in the form of an LED display emits greenlight when the tested types of NPN transistor and the second LED emits blue lightwhen the tested types of PNP transistors.To test the value of β, whose value is proportional to the display used by the collectorcurrent Ic.

  14. Submillimeter solar images from the JCMT

    Energy Technology Data Exchange (ETDEWEB)

    Kopp, G.; Lindsey, C.

    1992-01-01

    We present nearly full-disk, diffraction-limited solar images made at 350 and 850 [mu]m and at 1.3 mm from the 15 m James Clerk Maxwell Telescope on Mauna Kea. These wavelengths sample the thermal structure of the solar chromosphere at altitude from 500 to about 1500 km, providing a height-dependent diagnostic of the atmosphere. Filament channels and neutral lines are apparent in the submillimeter images, although filaments themselves are not clearly visible. The submillimeter images show plage approximately 20% brigher than the surrounding quiet Sun, while sunspot intensities are comparable to the quiet Sun. Circumfacules,' dark are similar to those seen in Ca 8542; comparison with Ca H and K may give estimates of the temperature and filing factor of the hot gas present in these probably bifurcated regions.

  15. Observing ice clouds in the submillimeter spectral range: the CloudIce mission proposal for ESA's Earth Explorer 8

    Directory of Open Access Journals (Sweden)

    S. A. Buehler

    2012-07-01

    Full Text Available Passive submillimeter-wave sensors are a way to obtain urgently needed global data on ice clouds, particularly on the so far poorly characterized "essential climate variable" ice water path (IWP and on ice particle size. CloudIce was a mission proposal to the European Space Agency ESA in response to the call for Earth Explorer 8 (EE8, which ran in 2009/2010. It proposed a passive submillimeter-wave sensor with channels ranging from 183 GHz to 664 GHz. The article describes the CloudIce mission proposal, with particular emphasis on describing the algorithms for the data-analysis of submillimeter-wave cloud ice data (retrieval algorithms and demonstrating their maturity. It is shown that we have a robust understanding of the radiative properties of cloud ice in the millimeter/submillimeter spectral range, and that we have a proven toolbox of retrieval algorithms to work with these data. Although the mission was not selected for EE8, the concept will be useful as a reference for other future mission proposals.

  16. Lightweight Thermally Stable Multi-Meter Aperture Submillimeter Reflectors Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Future astrophysics missions will require lightweight, thermally stable, submillimeter reflectors in sizes of 4m and greater. To date, graphite fiber reinforced...

  17. Optical driven electromechanical transistor based on tunneling effect.

    Science.gov (United States)

    Jin, Leisheng; Li, Lijie

    2015-04-15

    A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical current of the transistor is adjusted by the optical power. Coupled opto-electro-mechanical simulation has been performed. It is shown from the dynamic analysis that the stable working range of the transistor is much wider than that of the optical wave inside the cavity, i.e., the optical resonance enters nonperiodic states while the mechanical vibration of the ring is still periodic.

  18. Adaptable radiative transfer innovations for submillimeter telescopes (ARTIST)

    DEFF Research Database (Denmark)

    Padovani, Marco; Jørgensen, Jes Kristian; Bertoldi, Frank

    2011-01-01

    Submillimeter observations are a key for answering many of the big questions in modern-day astrophysics, such as how stars and planets form, how galaxies evolve, and how material cycles through stars and the interstellar medium. With the upcoming large submillimeter facilities ALMA and Herschel...

  19. Probing Galaxy Formation and Submillimeter Surveys

    Science.gov (United States)

    Dwek, Eli; Arendt, Richard G.; Benford, Dominic J.; Moseley, Harvey S.; Shafer, Richard A.; Staguhn, Johannes G.; Fisher, Richard R. (Technical Monitor)

    2002-01-01

    Multiwavelength observations of galaxies have revealed that a significant fraction of the their stellar or accretion luminosity is absorbed and reradiated by dust at far-infrared (FIR) and submillimeter (submm) wavelengths. Submillimeter (850 micron) surveys conducted by the SCUBA instrument on the JCMT have detected a population of high redshift (z approximately equal to 1-4) ultraluminous infrared galaxies, that dominate the luminosity densities at those redshifts. Their cumulative contribution to the cosmic infrared background (CIB) detected by the COBE satellite is comparable to the observations, suggesting that at 850 microns the CIB is resolved into its constituent sources. This suggests that the early universe was much more dust enshrouded than the present one. FIR and submm surveys can therefore address fundamental questions regarding the early processes of galaxy formation and their evolution in number and luminosity over cosmic history. The scientific information that can be obtained from such surveys depend on a number of parameters, the most important of which are the diameter of the telescope and the wavelengths of the survey. We summarize the effect of these parameters on the scientific return from such surveys.

  20. Bulk submillimeter-wave mixers: Strain and superlattices

    Science.gov (United States)

    Litvak, M. M.; Pickett, H. M.

    1980-01-01

    Strained germanium crystals, doped with gallium, were used as heterodyne mixers at THz frequencies, with infrared bandwidths approaching a GHz. The mixer performance (conversion loss and mixer noise) was analyzed in terms of nonlinearities associated with acceptor levels and with relaxation rates of free holes. Comparison was made with similar mixers employing low lying donor levels in high purity GaAs and with hot electron InSb mixers.

  1. Measurement of plasma conductivity using faraday rotation of submillimeter waves

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmenko, P.J.; Self, S.A.

    1983-03-01

    This paper examines the application of Faraday rotation to the measurement of electron combustion MHD plasmas. Details on the design of a working system are given, including the selection of operating wavelength. A theoretical comparison between the Faraday rotation technique and two-path interferometry shows Faraday rotation in its simplest form to be somewhat less sensitive to changes in electron concentration. This deficit can be balanced against greater immunity to vibration and thermal drift. Improved techniques of measuring the rotation angle promise greater sensitivity. A preliminary experiment has verified the technique.

  2. New technologies for the detection of millimeter and submillimeter waves

    Energy Technology Data Exchange (ETDEWEB)

    Richards, P.L.; Clarke, J.; Gildemeister, J.M.; Lanting, T.; Lee, A.T.; Myers, M.J.; Schwan, D.; Skidmore, J.T.; Spieler, H.G.; Yoon, Jongsoo

    2001-09-20

    Voltage-biased superconducting bolometers have many operational advantages over conventional bolometer technology including sensitivity, linearity, speed, and immunity from environmental disturbance. A review is given of the Berkeley program for developing this new technology. Developments include fully lithographed individual bolometers in the spiderweb configuration, arrays of 1024 close-packed absorber-coupled bolometers, antenna-coupled bolometers, and a frequency-domain SQUID readout multiplexer.

  3. Millimeter and submillimeter spectrum of propylene oxide

    Science.gov (United States)

    Mesko, A. J.; Zou, Luyao; Carroll, P. Brandon; Widicus Weaver, Susanna L.

    2017-05-01

    The spectrum of propylene oxide was collected from 70 GHz to 1 THz using direct absorption millimeter and submillimeter spectroscopy. Analysis of the spectrum was performed using the SPFIT/SPCAT programs for the A state. A full internal rotor analysis was performed using the XIAM program. The barrier to internal rotation of the methyl group was determined to be 893 cm-1. The precision of the rotation constants, centrifugal distortion constants, and internal rotor parameters was increased over the results reported by previous low-frequency studies. The results of this laboratory study and the associated analysis, as well as a spectral prediction for the ground vibrational state of propylene oxide, are presented.

  4. Millimeter and Submillimeter Observations of Ceres

    Science.gov (United States)

    Kuan, Yi-Jehng; Chuang, Yo-Ling; Tseng, Wei-Ling; Coulson, Iain M.; Chung, Ming-Chi

    2016-07-01

    1 Ceres is the largest celestial body in the Main Asteroid Belt and is also the sole dwarf planet in the inner solar system. Water vapor from small icy solar-system bodies, including Ceres and Europa, was detected by Herschel infrared space telescope recently. Data taken from Dawn spacecraft suggest that a subsurface layer of briny water ice, together with ammonia-rich clays, may exist on Ceres. We hence observed Ceres using the 15-m James Clerk Maxwell Telescope (JCMT) to search for other atmospheric molecules besides H _{2}O. Submillimeter continuum observations employing SCUBA-2 were also carried out. Here we report the tentative detection of hydrogen cyanide in the atmosphere of Ceres. If confirmed, our finding could imply that Ceres may have a comet-like chemical composition. However, further observational confirmation and more detailed analysis is needed.

  5. Photon caliper to achieve submillimeter positioning accuracy

    Science.gov (United States)

    Gallagher, Kyle J.; Wong, Jennifer; Zhang, Junan

    2017-09-01

    The purpose of this study was to demonstrate the feasibility of using a commercial two-dimensional (2D) detector array with an inherent detector spacing of 5 mm to achieve submillimeter accuracy in localizing the radiation isocenter. This was accomplished by delivering the Vernier ‘dose’ caliper to a 2D detector array where the nominal scale was the 2D detector array and the non-nominal Vernier scale was the radiation dose strips produced by the high-definition (HD) multileaf collimators (MLCs) of the linear accelerator. Because the HD MLC sequence was similar to the picket fence test, we called this procedure the Vernier picket fence (VPF) test. We confirmed the accuracy of the VPF test by offsetting the HD MLC bank by known increments and comparing the known offset with the VPF test result. The VPF test was able to determine the known offset within 0.02 mm. We also cross-validated the accuracy of the VPF test in an evaluation of couch hysteresis. This was done by using both the VPF test and the ExacTrac optical tracking system to evaluate the couch position. We showed that the VPF test was in agreement with the ExacTrac optical tracking system within a root-mean-square value of 0.07 mm for both the lateral and longitudinal directions. In conclusion, we demonstrated the VPF test can determine the offset between a 2D detector array and the radiation isocenter with submillimeter accuracy. Until now, no method to locate the radiation isocenter using a 2D detector array has been able to achieve such accuracy.

  6. Nanoscale Vacuum Channel Transistor.

    Science.gov (United States)

    Han, Jin-Woo; Moon, Dong-Il; Meyyappan, M

    2017-04-12

    Vacuum tubes that sparked the electronics era had given way to semiconductor transistors. Despite their faster operation and better immunity to noise and radiation compared to the transistors, the vacuum device technology became extinct due to the high power consumption, integration difficulties, and short lifetime of the vacuum tubes. We combine the best of vacuum tubes and modern silicon nanofabrication technology here. The surround gate nanoscale vacuum channel transistor consists of sharp source and drain electrodes separated by sub-50 nm vacuum channel with a source to gate distance of 10 nm. This transistor performs at a low voltage (3 microamperes). The nanoscale vacuum channel transistor can be a possible alternative to semiconductor transistors beyond Moore's law.

  7. Lightweight Thermally Stable Multi-Meter Aperture Submillimeter Reflectors Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The objective of the Phase II effort will be an affordable demonstrated full-scale design for a thermally stable multi-meter submillimeter reflector. The Phase I...

  8. Dual-Mode Gas Sensor Composed of a Silicon Nanoribbon Field Effect Transistor and a Bulk Acoustic Wave Resonator: A Case Study in Freons.

    Science.gov (United States)

    Chang, Ye; Hui, Zhipeng; Wang, Xiayu; Qu, Hemi; Pang, Wei; Duan, Xuexin

    2018-01-25

    In this paper, we develop a novel dual-mode gas sensor system which comprises a silicon nanoribbon field effect transistor (Si-NR FET) and a film bulk acoustic resonator (FBAR). We investigate their sensing characteristics using polar and nonpolar organic compounds, and demonstrate that polarity has a significant effect on the response of the Si-NR FET sensor, and only a minor effect on the FBAR sensor. In this dual-mode system, qualitative discrimination can be achieved by analyzing polarity with the Si-NR FET and quantitative concentration information can be obtained using a polymer-coated FBAR with a detection limit at the ppm level. The complementary performance of the sensing elements provides higher analytical efficiency. Additionally, a dual mixture of two types of freons (CFC-113 and HCFC-141b) is further analyzed with the dual-mode gas sensor. Owing to the small size and complementary metal-oxide semiconductor (CMOS)-compatibility of the system, the dual-mode gas sensor shows potential as a portable integrated sensing system for the analysis of gas mixtures in the future.

  9. A Submillimeter HCN Laser in IRC +10216.

    Science.gov (United States)

    Schilke; Mehringer; Menten

    2000-01-01

    We report the detection of a strong submillimeter-wavelength HCN laser line at a frequency near 805 GHz toward the carbon star IRC +10216. This line, the J=9-8 rotational transition within the (0400) vibrationally excited state, is one of a series of HCN laser lines that were first detected in the laboratory in the early days of laser spectroscopy. Since its lower energy level is 4200 K above the ground state, the laser emission must arise from the innermost part of IRC +10216's circumstellar envelope. To better characterize this environment, we observed other, thermally emitting, vibrationally excited HCN lines and found that they, like the laser line, arise in a region of temperature approximately 1000 K that is located within the dust formation radius; this conclusion is supported by the line width of the laser. The (0400), J=9-8 laser might be chemically pumped and may be the only known laser (or maser) that is excited both in the laboratory and in space by a similar mechanism.

  10. Black Holes and Sub-millimeter Dimensions

    CERN Document Server

    Argyres, Philip C; March-Russell, John David; Argyres, Philip C.; Dimopoulos, Savas; March-Russell, John

    1998-01-01

    Recently, a new framework for solving the hierarchy problem was proposed which does not rely on low energy supersymmetry or technicolor. The fundamental Planck mass is at a TeV and the observed weakness of gravity at long distances is due the existence of new sub-millimeter spatial dimensions. In this letter, we study how the properties of black holes are altered in these theories. Small black holes---with Schwarzschild radii smaller than the size of the new spatial dimensions---are quite different. They are bigger, colder, and longer-lived than a usual $(3+1)$-dimensional black hole of the same mass. Furthermore, they primarily decay into harmless bulk graviton modes rather than standard-model degrees of freedom. We discuss the interplay of our scenario with the holographic principle. Our results also have implications for the bounds on the spectrum of primordial black holes (PBHs) derived from the photo-dissociation of primordial nucleosynthesis products, distortion of the diffuse gamma-ray spectrum, overcl...

  11. Infrared/submillimeter optical properties data base

    Science.gov (United States)

    Alley, Phillip W.

    1989-01-01

    The general goal was to build a data base containing optical properties, such as reflectance, transmittance, refractive index, in the far infrared to submillimeter wavelength region. This data base would be limited to selected crystalline materials and temperature between 300 and 2 K. The selected materials were: lithium, lead, and strontium; the bromides of potassium and thallium; the carbides of silicone and tungsten; and the materials of KRS5, KRS6, diamond, and sapphire. Last summer, barium fluoride was selected as prototype material for building the data base. This summer the literature search, preparation of the data for barium fluoride was completed. In addition the literature search for data related to the compounds mentioned was completed. The current status is that barium fluoride is in a form suitable for a NASA internal publication. The papers containing the data on the other materials were xeroxed and they are ready to be reduced. On the reverse side, the top figure is a sample combination of data for the index of refraction at 300 K. The lower figure shows the transmittance vs wavelength at 300 and 80 K. These figures are a sample of many which were developed. Since barium fluoride was studied more than most of the materials listed above, it is clear that additional measurements should be made to fill in the gaps present on both temperature and wavelength data.

  12. Ionoacoustic characterization of the proton Bragg peak with submillimeter accuracy

    Energy Technology Data Exchange (ETDEWEB)

    Assmann, W., E-mail: walter.assmann@lmu.de; Reinhardt, S.; Lehrack, S.; Edlich, A.; Thirolf, P. G.; Parodi, K. [Department for Medical Physics, Ludwig-Maximilians-Universität München, Am Coulombwall 1, Garching 85748 (Germany); Kellnberger, S.; Omar, M.; Ntziachristos, V. [Institute for Biological and Medical Imaging, Technische Universität München and Helmholtz Zentrum München, Ingolstädter Landstrasse 1, Neuherberg 85764 (Germany); Moser, M.; Dollinger, G. [Institute for Applied Physics and Measurement Technology, Universität der Bundeswehr, Werner-Heisenberg-Weg 39, Neubiberg 85577 (Germany)

    2015-02-15

    Purpose: Range verification in ion beam therapy relies to date on nuclear imaging techniques which require complex and costly detector systems. A different approach is the detection of thermoacoustic signals that are generated due to localized energy loss of ion beams in tissue (ionoacoustics). Aim of this work was to study experimentally the achievable position resolution of ionoacoustics under idealized conditions using high frequency ultrasonic transducers and a specifically selected probing beam. Methods: A water phantom was irradiated by a pulsed 20 MeV proton beam with varying pulse intensity and length. The acoustic signal of single proton pulses was measured by different PZT-based ultrasound detectors (3.5 and 10 MHz central frequencies). The proton dose distribution in water was calculated by Geant4 and used as input for simulation of the generated acoustic wave by the matlab toolbox k-WAVE. Results: In measurements from this study, a clear signal of the Bragg peak was observed for an energy deposition as low as 10{sup 12} eV. The signal amplitude showed a linear increase with particle number per pulse and thus, dose. Bragg peak position measurements were reproducible within ±30 μm and agreed with Geant4 simulations to better than 100 μm. The ionoacoustic signal pattern allowed for a detailed analysis of the Bragg peak and could be well reproduced by k-WAVE simulations. Conclusions: The authors have studied the ionoacoustic signal of the Bragg peak in experiments using a 20 MeV proton beam with its correspondingly localized energy deposition, demonstrating submillimeter position resolution and providing a deep insight in the correlation between the acoustic signal and Bragg peak shape. These results, together with earlier experiments and new simulations (including the results in this study) at higher energies, suggest ionoacoustics as a technique for range verification in particle therapy at locations, where the tumor can be localized by ultrasound

  13. Solar Observations with the Atacama Large Millimeter/submillimeter Array

    Science.gov (United States)

    Wedemeyer, Sven

    2015-08-01

    The interferometric Atacama Large Millimeter/submillimeter Array (ALMA) has already demonstrated its impressive capabilities by observing a large variety of targets ranging from protoplanetary disks to galactic nuclei. ALMA is also capable of observing the Sun and has been used for five solar test campaigns so far. The technically challenging solar observing modes are currently under development and regular observations are expected to begin in late 2016.ALMA consists of 66 antennas located in the Chilean Andes at an altitude of 5000 m and is a true leap forward in terms of spatial resolution at millimeter wavelengths. The resolution of reconstructed interferometric images of the Sun is anticipated to be close to what current optical solar telescopes can achieve. In combination with the high temporal and spectral resolution, these new capabilities open up new parameter spaces for solar millimeter observations.The solar radiation at wavelengths observed by ALMA originates from the chromosphere, where the height of the sampled layer increases with selected wavelength. The continuum intensity is linearly correlated to the local gas temperature in the probed layer, which makes ALMA essentially a linear thermometer. During flares, ALMA can detect additional non-thermal emission contributions. Measurements of the polarization state facilitate the valuable determination of the chromospheric magnetic field. In addition, spectrally resolved observations of radio recombination and molecular lines may yield great diagnostic potential, which has yet to be investigated and developed.Many different scientific applications for a large range of targets from quiet Sun to active regions and prominences are possible, ranging from ultra-high cadence wave studies to flare observations. ALMA, in particular in combination with other ground-based and space-borne instruments, will certainly lead to fascinating new findings, which will advance our understanding of the atmosphere of our Sun

  14. Ballistic Phosphorene Transistor

    Science.gov (United States)

    2015-11-19

    satisfactory. W911NF-14-1-0572 -II 66414-EL-II.3 TO:(1) Electronics Division (Qiu, Joe) TITLE: Final Report: Ballistic Phosphorene Transistor (x) Material... Transistor ” as a STIP award for the period 09/1/2014 through 5/31/2015. The ARO program director responsible for the grant is Dr. Joe Qiu. The PI is Prof...UU 19-11-2015 1-Sep-2014 31-May-2015 Approved for Public Release; Distribution Unlimited Final Report: Ballistic Phosphorene Transistor The views

  15. Wave

    DEFF Research Database (Denmark)

    Ibsen, Lars Bo

    2008-01-01

    Estimates for the amount of potential wave energy in the world range from 1-10 TW. The World Energy Council estimates that a potential 2TW of energy is available from the world’s oceans, which is the equivalent of twice the world’s electricity production. Whilst the recoverable resource is many...... times smaller it remains very high. For example, whilst there is enough potential wave power off the UK to supply the electricity demands several times over, the economically recoverable resource for the UK is estimated at 25% of current demand; a lot less, but a very substantial amount nonetheless....

  16. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  17. Organic thin film transistors

    OpenAIRE

    Reese, Colin; Roberts, Mark; Ling, Mang-mang; Bao, Zhenan

    2004-01-01

    Since John Bardeen, William Shockley, and Walter Brattain invented the world's first transistor in 1947, inorganic field-effect transistors (FETs) have dominated the mainstream microelectronics industry. They are the fundamental building blocks for basic analytical circuits, such as amplifiers, as well as the key elements for digital combinational logic circuits, such as adders, shifters, inverters, and arithmetic logic units, and are used to build sequential logic circuits, such as flip-flop...

  18. Transistor-based interface circuitry

    Science.gov (United States)

    Taubman, Matthew S [Richland, WA

    2004-02-24

    Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

  19. Transistor-based interface circuitry

    Science.gov (United States)

    Taubman, Matthew S.

    2007-02-13

    Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

  20. Development Of A Multicolor Sub/millimeter Camera Using Microwave Kinetic Inductance Detectors

    Science.gov (United States)

    Schlaerth, James A.; Czakon, N. G.; Day, P. K.; Downes, T. P.; Duan, R.; Glenn, J.; Golwala, S. R.; Hollister, M. I.; LeDuc, H. G.; Maloney, P. R.; Mazin, B. A.; Noroozian, O.; Sayers, J.; Siegel, S.; Vayonakis, A.; Zmuidzinas, J.

    2011-01-01

    Microwave Kinetic Inductance Detectors (MKIDs) are superconducting resonators useful for detecting light from the millimeter-wave to the X-ray. These detectors are easily multiplexed, as the resonances can be tuned to slightly different frequencies, allowing hundreds of detectors to be read out simultaneously using a single feedline. The Multicolor Submillimeter Inductance Camera, MUSIC, will use 2304 antenna-coupled MKIDs in multicolor operation, with bands centered at wavelengths of 0.85, 1.1, 1.3 and 2.0 mm, beginning in 2011. Here we present the results of our demonstration instrument, DemoCam, containing a single 3-color array with 72 detectors and optics similar to MUSIC. We present sensitivities achieved at the telescope, and compare to those expected based upon laboratory tests. We explore the factors that limit the sensitivity, in particular electronics noise, antenna efficiency, and excess loading. We discuss mitigation of these factors, and how we plan to improve sensitivity to the level of background-limited performance for the scientific operation of MUSIC. Finally, we note the expected mapping speed and contributions of MUSIC to astrophysics, and in particular to the study of submillimeter galaxies. This research has been funded by grants from the National Science Foundation, the Gordon and Betty Moore Foundation, and the NASA Graduate Student Researchers Program.

  1. Two bolometer arrays for far-infrared and submillimeter astronomy

    Science.gov (United States)

    Silverberg, Robert F.; Allen, Christine A.; Babu, Sachidananda R.; Benford, Dominic J.; Chuss, David T.; Dotson, Jessie L.; Dowell, Charles D.; Harper, Doyle A.; Jhabvala, Murzy D.; Loewenstein, Robert F.; Moseley, S. H., Jr.; Staguhn, Johannes G.; Voellmer, George M.; Wollack, Edward J.

    2004-10-01

    We describe the development, construction, and testing of two 384 element arrays of ion-implanted semiconducting cryogenic bolometers designed for use in far-infrared and submillimeter cameras. These two dimensional arrays are assembled from a number of 32 element linear arrays of monolithic Pop-Up bolometer Detectors (PUD) developed at NASA/Goddard Space Flight Center. PUD technology allows the construction of large, high filling factor, arrays that make efficient use of available focal plane area in far-infrared and submillimeter astronomical instruments. Such arrays can be used to provide a significant increase in mapping speed over smaller arrays. A prototype array has been delivered and integrated into a ground-based camera, the Submillimeter High Angular Resolution Camera (SHARC II), a facility instrument at the Caltech Submillimeter Observatory (CSO). A second array has recently been delivered for integration into the High-resolution Airborne Widebandwidth Camera (HAWC), a far-infrared imaging camera for the Stratospheric Observatory for Infrared Astronomy (SOFIA). HAWC is scheduled for commissioning in 2005.

  2. Heterojunction Bipolar Transistor Power Amplifiers for Long-Range X-band Communications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR Phase I project, Vega Wave Systems, Inc. will develop and demonstrate a novel InGaP-GaAs heterojunction bipolar transistor power amplifier for...

  3. Transistor scaling with novel materials

    OpenAIRE

    Meikei Ieong; Vijay Narayanan; Dinkar Singh; Anna Topol; Victor Chan; Zhibin Ren

    2006-01-01

    Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years.

  4. Quantum Thermal Transistor.

    Science.gov (United States)

    Joulain, Karl; Drevillon, Jérémie; Ezzahri, Younès; Ordonez-Miranda, Jose

    2016-05-20

    We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism. For the case of three interacting spins, in which one of them is coupled to the other two, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nanosystems.

  5. Estimation of physiological sub-millimeter displacement with CW Doppler radar.

    Science.gov (United States)

    Jia Xu; Xiaomeng Gao; Padasdao, Bryson E; Boric-Lubecke, Olga

    2015-01-01

    Doppler radar physiological sensing has been studied for non-contact detection of vital signs including respiratory and heartbeat rates. This paper presents the first micrometer resolution Wi-Fi band Doppler radar for sub-millimeter physiological displacement measurement. A continuous-wave Doppler radar working at 2.4GHz is used for the measurement. It is intended for estimating small displacements on the body surface resulting from physiological activity. A mechanical mover was used as target, and programmed to conduct sinusoidal motions to simulate pulse motions. Measured displacements were compared with a reference system, which indicates a superior performance in accuracy for having absolute errors less than 10μm, and relative errors below 4%. It indicates the feasibility of highly accurate non-contact monitoring of physiological movements using Doppler radar.

  6. Submillimeter ionoacoustic range determination for protons in water at a clinical synchrocyclotron

    Science.gov (United States)

    Lehrack, Sebastian; Assmann, Walter; Bertrand, Damien; Henrotin, Sebastien; Herault, Joel; Heymans, Vincent; Vander Stappen, Francois; Thirolf, Peter G.; Vidal, Marie; Van de Walle, Jarno; Parodi, Katia

    2017-09-01

    Proton ranges in water between 145 MeV to 227 MeV initial energy have been measured at a clinical superconducting synchrocyclotron using the acoustic signal induced by the ion dose deposition (ionoacoustic effect). Detection of ultrasound waves was performed by a very sensitive hydrophone and signals were stored in a digital oscilloscope triggered by secondary prompt gammas. The ionoacoustic range measurements were compared to existing range data from a calibrated range detector setup on-site and agreement of better than 1 mm was found at a Bragg peak dose of about 10 Gy for 220 MeV initial proton energy, compatible with the experimental errors. Ionoacoustics has thus the potential to measure the Bragg peak position with submillimeter accuracy during proton therapy, possibly correlated with ultrasound tissue imaging.

  7. Mesoscopic photon heat transistor

    DEFF Research Database (Denmark)

    Ojanen, T.; Jauho, Antti-Pekka

    2008-01-01

    We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir-Wingreen-Landauer-typ......We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir...

  8. High mobility polymer gated organic field effect transistor using zinc ...

    Indian Academy of Sciences (India)

    Mater. Sci., Vol. 37, No. 1, February 2014, pp. 95–99. c Indian Academy of Sciences. High mobility polymer gated organic field effect transistor using zinc phthalocyanine. K R RAJESH. ∗. , V KANNAN, M R KIM, Y S CHAE and J K RHEE. Millimeter- Wave Innovation Technology Research Centre (MINT), Dongguk University,.

  9. A Matterwave Transistor Oscillator

    CERN Document Server

    Caliga, Seth C; Zozulya, Alex A; Anderson, Dana Z

    2012-01-01

    A triple-well atomtronic transistor combined with forced RF evaporation is used to realize a driven matterwave oscillator circuit. The transistor is implemented using a metalized compound glass and silicon substrate. On-chip and external currents produce a cigar-shaped magnetic trap, which is divided into transistor source, gate, and drain regions by a pair of blue-detuned optical barriers projected onto the magnetic trap through a chip window. A resonant laser beam illuminating the drain portion of the atomtronic transistor couples atoms emitted by the gate to the vacuum. The circuit operates by loading the source with cold atoms and utilizing forced evaporation as a power supply that produces a positive chemical potential in the source, which subsequently drives oscillation. High-resolution in-trap absorption imagery reveals gate atoms that have tunneled from the source and establishes that the circuit emits a nominally mono-energetic matterwave with a frequency of 23.5(1.0) kHz by tunneling from the gate, ...

  10. Photoresponsive nanoscale columnar transistors.

    Science.gov (United States)

    Guo, Xuefeng; Xiao, Shengxiong; Myers, Matthew; Miao, Qian; Steigerwald, Michael L; Nuckolls, Colin

    2009-01-20

    This study reports a general methodology for making stable high-performance photosensitive field effect transistors (FET) from self-assembled columns of polycyclic aromatic hydrocarbons by using single-walled carbon nanotubes (SWNTs) as point contacts. In particular, the molecules used in this work are liquid crystalline materials of tetra(dodecyloxy)hexabenzocoronenes (HBCs) that are able to self-organize into columnar nanostructures with a diameter similar to that of SWNTs and then form nanoscale columnar transistors. To rule out potential artifacts, 2 different structural approaches were used to construct devices. One approach is to coat thin films of HBCs onto the devices with the SWNT-metal junctions protected by hydrogensilsesquioxane resin (HSQ), and the other is to place a droplet of HBC exactly on the nanogaps of SWNT electrodes. Both types of devices showed typical FET behaviors, indicating that SWNT-molecule-SWNT nanojunctions are responsible for the electrical characteristics of the devices. After thermally annealing the devices, HBC molecules assembled into columnar structures and formed more efficacious transistors with increased current modulation and higher gate efficiency. More interestingly, when the devices were exposed to visible light, photocurrents with an on/off ratio of >3 orders of magnitude were observed. This study demonstrates that stimuli-responsive nanoscale transistors have the potential applications in ultrasensitive devices for environmental sensing and solar energy harvesting.

  11. Photosensitive graphene transistors.

    Science.gov (United States)

    Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

    2014-08-20

    High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Radiation-hardened transistor and integrated circuit

    Science.gov (United States)

    Ma, Kwok K.

    2007-11-20

    A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

  13. Passive magnetic shielding for the submillimeter and far infrared experiment

    Energy Technology Data Exchange (ETDEWEB)

    Kamiya, Koji; Warner, B.A.; Di Pirro, M.J.; Numazawa, Takenori

    2003-05-01

    Goddard Space Flight Center is developing the submillimeter and far infrared experiment (SAFIRE). SAFIRE will use SQUIDs as amplifiers for detectors, which must be shielded from the magnet cooling system, an adiabatic demagnetization refrigerator (ADR). The magnetic field at the detector package must remain at or below the 10{sup -7} tesla level while the detectors are operating. We discuss laboratory tests of the passive shielding and simulations.

  14. Analysis of the Sub-Millimeter Rotational Spectrum of Urea

    Science.gov (United States)

    Thomas, Jessica R.; Fosnight, Alyssa M.; Medvedev, Ivan R.

    2013-06-01

    Urea, ((NH_{2})_{2}CO), has broad presence in biological species. As a byproduct of human metabolism, this molecule is commonly tested for in blood to diagnose different pathologies. Furthermore, urea is seen in interstellar medium and its detection could yield valuable insight into the mechanisms governing star formation. Despite the prevalence of urea, an absence exists in recorded frequencies of this molecule. The new generation of the sub-millimeter telescopes, such as ALMA, HERSCHEL, and SOFIA, allows detection of interstellar molecular spectra at unprecedented spatial and spectral resolutions. The knowledge of the precise frequencies of spectra transitions present in interstellar molecular clouds would alleviate the problem of spectral congestion and aid in molecular identification. This paper reports the most recent investigation of the submillimeter/terahertz gas phase spectrum of urea. Up until now, only the microwave laboratory spectrum of urea's vibrational ground state has been available. This paper reports the high-resolution spectra of urea in the sub-millimeter range, and extends the spectroscopic assignment of the rotational transitions in the vibrational ground state. Additionally, the assignment of the first vibrational state and tentative assignments of two additional vibrational states have been made.

  15. A SUBMILLIMETER CONTINUUM SURVEY OF LOCAL DUST-OBSCURED GALAXIES

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Chul [Korea Astronomy and Space Science Institute, 776 Daedeokdae-ro, Yuseong-gu, Daejeon 34055 (Korea, Republic of); Hwang, Ho Seong [School of Physics, Korea Institute for Advanced Study, 85 Hoegiro, Dongdaemun-gu, Seoul 02455 (Korea, Republic of); Lee, Gwang-Ho, E-mail: jclee@kasi.re.kr [Department of Physics and Astronomy, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742 (Korea, Republic of)

    2016-12-20

    We conduct a 350 μ m dust continuum emission survey of 17 dust-obscured galaxies (DOGs) at z = 0.05–0.08 with the Caltech Submillimeter Observatory (CSO). We detect 14 DOGs with S{sub 350μm} = 114–650 mJy and signal-to-noise > 3. By including two additional DOGs with submillimeter data in the literature, we are able to study dust content for a sample of 16 local DOGs, which consist of 12 bump and four power-law types. We determine their physical parameters with a two-component modified blackbody function model. The derived dust temperatures are in the range 57–122 K and 22–35 K for the warm and cold dust components, respectively. The total dust mass and the mass fraction of the warm dust component are 3–34 × 10{sup 7} M {sub ⊙} and 0.03%–2.52%, respectively. We compare these results with those of other submillimeter-detected infrared luminous galaxies. The bump DOGs, the majority of the DOG sample, show similar distributions of dust temperatures and total dust mass to the comparison sample. The power-law DOGs show a hint of smaller dust masses than other samples, but need to be tested with a larger sample. These findings support that the reason DOGs show heavy dust obscuration is not an overall amount of dust content, but probably the spatial distribution of dust therein.

  16. Observational Approach to Molecular Cloud Evolution with the Submillimeter CI Lines

    Science.gov (United States)

    Oka, T.; Yamamoto, S.; Mt. Fuji Submillimeter-Wave Telescope Group

    Neutral carbon atoms (CI) play important role both in chemistry and cooling processes of interstellar molecular clouds. It is thus crucial to explore its large area distribution to investigate formation processes and thermal balance of molecular clouds. We have constructed a 1.2 m submillimeter-wave telescope at the summit of Mt.Fuji. The telescope was designed for the exclusive use of surveying molecular clouds in two submillimeter CI lines, 3P1--3P0 (492 GHz) and 3P2--3P1 (809 GHz), of atomic carbon. It has been operated successfully during 4 observing seasons since July 1998 in a remote way from the Hongo campus of the University of Tokyo. We have already revealed large-scale CI 492 GHz distributions of many giant molecular clouds, including Orion MC, Taurus MC, DR15, DR21, NGC2264, M17, W3, W44, W51, Rosette MC, covering more than 40 square degrees of the sky. The distribution of CI 492 GHz emission is found to be different from those of the 13CO or C18O emission in some clouds. We found the spatial order of C+/CO/C from UV sources. This is the general property of the cloud illuminated by intense UV radiation, whereas it is apparently inconsistent with the standard photodissociation region (PDR) picture. We also found CI-rich areas (C/CO˜1) in several dark clouds without strong UV sources. These results are discussed in relation to formation processes of molecular clouds and dense cloud cores.

  17. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    Science.gov (United States)

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  18. Field Effect Transistor in Nanoscale

    Science.gov (United States)

    2017-04-26

    AFRL-AFOSR-JP-TR-2017-0034 Field Effect Transistor in Nanoscale Swapan Pati JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH Final Report 04...Final 3. DATES COVERED (From - To) 28 Sep 2015 to 27 Sep 2016 4. TITLE AND SUBTITLE Field Effect Transistor in Nanoscale 5a.  CONTRACT NUMBER 5b...significant alteration in transport behaviour of these molecular junctions. 15. SUBJECT TERMS Theory, Nanoscale, Field Effect Transistor (FET), Devices

  19. Junctionless Cooper pair transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, K. Yu., E-mail: konstantin.yu.arutyunov@jyu.fi [National Research University Higher School of Economics , Moscow Institute of Electronics and Mathematics, 101000 Moscow (Russian Federation); P.L. Kapitza Institute for Physical Problems RAS , Moscow 119334 (Russian Federation); Lehtinen, J.S. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, FI-02044 VTT (Finland)

    2017-02-15

    Highlights: • Junctionless Cooper pair box. • Quantum phase slips. • Coulomb blockade and gate modulation of the Coulomb gap. - Abstract: Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by ±2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime was used. The current–voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field.

  20. Ion bipolar junction transistors.

    Science.gov (United States)

    Tybrandt, Klas; Larsson, Karin C; Richter-Dahlfors, Agneta; Berggren, Magnus

    2010-06-01

    Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and thin films of anion- and cation-selective membranes. The IBJT is the ionic analogue to the conventional semiconductor BJT and is manufactured using standard microfabrication techniques. Transistor characteristics along with a model describing the principle of operation, in which an anionic base current amplifies a cationic collector current, are presented. By employing the IBJT as a bioelectronic circuit element for delivery of the neurotransmitter acetylcholine, its efficacy in modulating neuronal cell signaling is demonstrated.

  1. Research Status and Action of Sub-millimeter Debris Impact Damage on Spacecraft Structure

    OpenAIRE

    Higashide, Masumi; Kurosaki, Hirohisa; Hasegawa, Sunao; 東出, 真澄; 黒崎, 裕久; 長谷川, 直

    2015-01-01

    To assess debris impact risk for the satellite, submillimeter debris impact damage has not been investigated enough to conduct satellite protective designing. JAXA is researching vulnerability of satellite structure materials against submillimeter debris impact, and proposing shielding methods. This report shows summary of submillimeter impact damages of honeycomb sandwich panels. The damage of the panel was investigated by hypervelocity impact experiments with the two-stage light gas gun in ...

  2. Polarization induced doped transistor

    Science.gov (United States)

    Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

    2016-06-07

    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

  3. Transistorized PWM inverter-induction motor drive system

    Science.gov (United States)

    Peak, S. C.; Plunkett, A. B.

    1982-01-01

    This paper describes the development of a transistorized PWM inverter-induction motor traction drive system. A vehicle performance analysis was performed to establish the vehicle tractive effort-speed requirements. These requirements were then converted into a set of inverter and motor specifications. The inverter was a transistorized three-phase bridge using General Electric power Darlington transistors. The description of the design and development of this inverter is the principal object of this paper. The high-speed induction motor is a design which is optimized for use with an inverter power source. The primary feedback control is a torque angle control with voltage and torque outer loop controls. A current-controlled PWM technique is used to control the motor voltage. The drive has a constant torque output with PWM operation to base motor speed and a constant horsepower output with square wave operation to maximum speed. The drive system was dynamometer tested and the results are presented.

  4. Submillimeter Detection of the van der Waals Stretching Vibration of the Ar-CO Complex

    Science.gov (United States)

    Gendriesch, R.; Pak, I.; Lewen, F.; Surin, L.; Roth, D. A.; Winnewisser, G.

    1999-07-01

    With the Cologne submillimeter-wave supersonic jet spectrometer, we extended molecular jet spectroscopy with backward wave oscillators up to frequencies of about 600 GHz. For the first time, the van der Waals stretching vibration of the Ar-CO molecular complex was detected in direct absorption. We measured 13 ro-vibrational transitions (Kvstretch = 1 ← 0, Ka = 0 ← 0) in the frequency range from 528 to 600 GHz and additionally the two R(3) K doublet (Ka = 4 ← 3) pure rotational transitions at 447 GHz with an accuracy of about 200 kHz. The ro-vibrational transitions were assigned and fitted within experimental accuracy to a simple Hamiltonian taking into account the Coriolis interaction between the stretching and bending states, i.e., between vstretch = 1, Ka = 0, and vbend = 1, Ka = 1. The intensity of the transitions in the van der Waals stretching mode was estimated to be a factor of 5-10 less than that in the bending mode of Ar-CO.

  5. CLUMPY AND EXTENDED STARBURSTS IN THE BRIGHTEST UNLENSED SUBMILLIMETER GALAXIES

    Energy Technology Data Exchange (ETDEWEB)

    Iono, Daisuke; Hatsukade, Bunyo; Kawabe, Ryohei; Matsuda, Yuichi; Nakanishi, Kouichiro [National Astronomical Observatory of Japan, National Institutes of Natural Sciences, 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan); Yun, Min S.; Wilson, Grant [University of Massachusetts, Department of Astronomy, 710 North Pleasant Street, Amherst, MA 01003 (United States); Aretxaga, Itziar; Hughes, David [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), Luis Enrique Erro 1, Sta. Ma. Tonantzintla, Puebla (Mexico); Ikarashi, Soh [Kapteyn Astronomical Institute, University of Groningen, P.O. Box 800, 9700AV Groningen (Netherlands); Izumi, Takuma; Kohno, Kotaro; Tamura, Yoichi; Umehata, Hideki [Institute of Astronomy, The University of Tokyo, 2-21-1 Osawa, Mitaka, Tokyo 181-0015 (Japan); Lee, Minju; Saito, Toshiki [Department of Astronomy, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 133-0033 (Japan); Ueda, Junko [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Michiyama, Tomonari; Ando, Misaki, E-mail: d.iono@nao.ac.jp [SOKENDAI (The Graduate University for Advanced Studies), 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan)

    2016-09-20

    The central structure in three of the brightest unlensed z = 3–4 submillimeter galaxies is investigated through 0.″015–0.″05 (120–360 pc) 860 μ m continuum images obtained using the Atacama Large Millimeter/submillimeter Array (ALMA). The distribution in the central kiloparsec in AzTEC1 and AzTEC8 is extremely complex, and they are composed of multiple ∼200 pc clumps. AzTEC4 consists of two sources that are separated by ∼1.5 kpc, indicating a mid-stage merger. The peak star formation rate densities in the central clumps are ∼300–3000 M {sub ⊙} yr{sup −1} kpc{sup −2}, suggesting regions with extreme star formation near the Eddington limit. By comparing the flux obtained by ALMA and Submillimeter Array, we find that 68%–90% of the emission is extended (≳1 kpc) in AzTEC4 and 8. For AzTEC1, we identify at least 11 additional compact (∼200 pc) clumps in the extended 3–4 kpc region. Overall, the data presented here suggest that the luminosity surface densities observed at ≲150 pc scales are roughly similar to that observed in local ULIRGs, as in the eastern nucleus of Arp 220. Between 10% and 30% of the 860 μ m continuum is concentrated in clumpy structures in the central kiloparsec, while the remaining flux is distributed over ≳1 kpc regions, some of which could also be clumpy. These sources can be explained by a rapid inflow of gas such as a merger of gas-rich galaxies, surrounded by extended and clumpy starbursts. However, the cold mode accretion model is not ruled out.

  6. Detection of Circular Polarization from Sagittarius A* at Submillimeter Wavelengths

    Science.gov (United States)

    Munoz, Diego; Marrone, D.; Moran, J.

    2009-05-01

    We report the detection of circularly polarized (CP) emission from the compact radio source Sagittarius A* at a level of 1.5% at a frequency of 235 GHz (1.4 mm). Sgr A* is associated with the supermassive black hole (SMBH) in the Galactic Center. The observations, taken with the Submillimeter Array (SMA) on 03/31/2007, also show a linearly polarized (LP) component of 7%. The snr of our detection of CP is about 14. Before our measurements, CP had only been detected at frequencies between 1.4 and 15 GHz (21 and 2 cm) at levels Faraday rotation in the stationary screen (constant RM)acts on a time variable background source. A cold, optically thin plasma screen cannot be responsible for both a constant RM and Faraday conversion from LP to CP, therefore the observed amounts of CP are likely to be originated close to the central source. Sgr A* shows a flat-to-inverted radio spectrum and a submillimeter excess referred to as the "submillimeter bump". This excess it thought to come from the closest regions to the SMBH. In such a scenario, millimeter wavelength data is associated with regions in which the material is likely to be relativistic and the magnetic field ordered. We have carried out polarized radiative transfer calculations exploring different combinations of ordered and stochastic magnetic fields looking for a favored scenario that can explain the apparent constant increase of CP with frequency as well as the sudden jump in LP between 40 and 80 GHz.

  7. Superconductor Semiconductor Research for NASA's Submillimeter Wavelength Missions

    Science.gov (United States)

    Crowe, Thomas W.

    1997-01-01

    Wideband, coherent submillimeter wavelength detectors of the highest sensitivity are essential for the success of NASA's future radio astronomical and atmospheric space missions. The critical receiver components which need to be developed are ultra- wideband mixers and suitable local oscillator sources. This research is focused on two topics, (1) the development of reliable varactor diodes that will generate the required output power for NASA missions in the frequency range from 300 GHZ through 2.5 THz, and (2) the development of wideband superconductive mixer elements for the same frequency range.

  8. The spin-valve transistor

    NARCIS (Netherlands)

    Anil Kumar, P.S.; Lodder, J.C.

    2000-01-01

    The spin-valve transistor is a magnetoelectronic device that can be used as a magnetic field sensor. It has a ferromagnet-semiconductor hybrid structure. Using a vacuum metal bonding technique, the spin-valve transistor structure Si/Pt/NiFe/Au/Co/Au/Si is obtained. It employs hot electron transport

  9. Correlation and squeezing for optical transistor and intensity for router applications in Pr3+:YSO.

    Science.gov (United States)

    Khan, Ghulam Abbas; Li, Changbiao; Raza, Faizan; Ahmed, Noor; Mahesar, Abdul Rasheed; Ahmed, Irfan; Zhang, Yanpeng

    2017-06-14

    We realized an optical transistor and router utilizing multi-order fluorescence and spontaneous parametric four-wave mixing. Specifically, the optical routing action was derived from the results of splitting in the intensity signal due to a dressing effect, whereas the transistor as a switch and amplifier was realized by a switching correlation and squeezing via a nonlinear phase. A substantial enhancement of the optical contrast was observed for switching applications using correlation and squeezing contrary to the intensity signal. Moreover, the controlling parameters were also configured to devise a control mechanism for the optical transistor and router.

  10. Properties of Submillimeter Galaxies in the CANDELS GOODS-South Field

    NARCIS (Netherlands)

    Wiklind, Tommy; Conselice, Christopher J.; Dahlen, Tomas; Dickinson, Mark E.; Ferguson, Henry C.; Grogin, Norman A.; Guo, Yicheng; Koekemoer, Anton M.; Mobasher, Bahram; Mortlock, Alice; Fontana, Adriano; Davé, Romeel; Yan, Haojing; Acquaviva, Viviana; Ashby, Matthew L. N.; Barro, Guillermo; Caputi, Karina I.; Castellano, Marco; Dekel, Avishai; Donley, Jennifer L.; Fazio, Giovanni G.; Giavalisco, Mauro; Grazian, Andrea; Hathi, Nimish P.; Kurczynski, Peter; Lu, Yu; McGrath, Elizabeth J.; de Mello, Duilia F.; Peth, Michael; Safarzadeh, Mohammad; Stefanon, Mauro; Targett, Thomas

    We derive physical properties of 10 submillimeter galaxies located in the CANDELS coverage of the GOODS-S field. The galaxies were first identified as submillimeter sources with the LABOCA bolometer and subsequently targeted for 870 μm continuum observation with ALMA. The high angular resolution of

  11. A Black Hole Mass-Variability Timescale Correlation at Submillimeter Wavelengths

    NARCIS (Netherlands)

    Bower, G.C.; Dexter, J.; Markoff, S.; Gurwell, M.A.; Rao, R.; McHardy, I.

    2015-01-01

    We analyze the light curves of 413 radio sources at submillimeter wavelengths using data from the Submillimeter Array calibrator database. The database includes more than 20,000 observations at 1.3 and 0.8 mm that span 13 years. We model the light curves as a damped random walk and determine a

  12. Transition-Edge Hot-Electron Microbolometers for Millimeter and Submillimeter Astrophysics

    Science.gov (United States)

    Hsieh, Wen-Ting; Stevenson, Thomas; U-yen, Kongpop; Wollack, Edward; Barrentine, Emily

    2014-01-01

    The millimeter and the submillimeter wavelengths of the electromagnetic spectrum hold a wealth of information about the evolution of the universe. In particular, cosmic microwave background (CMB) radiation and its polarization carry the oldest information in the universe, and provide the best test of the inflationary paradigm available to astronomy today. Detecting gravity waves through their imprint on the CMB polarization would have extraordinary repercussions for cosmology and physics. A transition-edge hot-electron micro - bolometer (THM) consists of a superconducting bilayer transition-edge sensor (TES) with a thin-film absorber. Unlike traditional monolithic bolometers that make use of micromachined structures, the THM em ploys the decoupling between electrons and phonons at millikelvin temperatures to provide thermal isolation. The devices are fabricated photolithographically and are easily integrated with antennas via microstrip transmission lines, and with SQUID (superconducting quantum interference device) readouts. The small volume of the absorber and TES produces a short thermal time constant that facilitates rapid sky scanning. The THM consists of a thin-film metal absorber overlapping a superconducting TES. The absorber forms the termination of a superconducting microstripline that carries RF power from an antenna. The purpose of forming a separate absorber and TES is to allow flexibility in the optimization of the two components. In particular, the absorbing film's impedance can be chosen to match the antenna, while the TES impedance can be chosen to match to the readout SQUID amplifier. This scheme combines the advantages of the TES with the advantages of planar millimeter-wave transmission line circuits. Antenna-coupling to the detectors via planar transmission lines allows the detector dimensions to be much smaller than a wavelength, so the technique can be extended across the entire microwave, millimeter, and submillimeter wavelength ranges. The

  13. Josephson frequency meter for millimeter and submillimeter wavelengths

    Energy Technology Data Exchange (ETDEWEB)

    Anischenko, S.E.; Larkin, S.Y.; Chaikovsky, V.I. [State Research Center, Kiev (Ukraine)] [and others

    1994-12-31

    Frequency measurements of electromagnetic oscillations of millimeter and submillimeter wavebands with frequency growth due to a number of reasons become more and more difficult. First, these frequencies are considered to be cutoff for semiconductor converting devices and one has to use optical measurement methods instead of traditional ones with frequency transfer. Second, resonance measurement methods are characterized by using relatively narrow bands and optical ones are limited in frequency and time resolution due to the limited range and velocity of movement of their mechanical elements as well as the efficiency of these optical techniques decreases with the increase of wavelength due to diffraction losses. That requires the apriori information on the radiation frequency band of the source involved. Method of measuring frequency of harmonic microwave signals in millimeter and submillimeter wavebands based on the ac Josephson effect in superconducting contacts is devoid of all the above drawbacks. This approach offers a number of major advantages over the more traditional measurement methods, that is the one based on frequency conversion, resonance and interferrometric techniques. It can be characterized by high potential accuracy, wide range of frequencies measured, prompt measurement and the opportunity to obtain panoramic display of the results as well as full automation of the measuring process.

  14. A Sub-millimeter, Inductively Powered Neural Stimulator

    Directory of Open Access Journals (Sweden)

    Daniel K. Freeman

    2017-11-01

    Full Text Available Wireless neural stimulators are being developed to address problems associated with traditional lead-based implants. However, designing wireless stimulators on the sub-millimeter scale (<1 mm3 is challenging. As device size shrinks, it becomes difficult to deliver sufficient wireless power to operate the device. Here, we present a sub-millimeter, inductively powered neural stimulator consisting only of a coil to receive power, a capacitor to tune the resonant frequency of the receiver, and a diode to rectify the radio-frequency signal to produce neural excitation. By replacing any complex receiver circuitry with a simple rectifier, we have reduced the required voltage levels that are needed to operate the device from 0.5 to 1 V (e.g., for CMOS to ~0.25–0.5 V. This reduced voltage allows the use of smaller receive antennas for power, resulting in a device volume of 0.3–0.5 mm3. The device was encapsulated in epoxy, and successfully passed accelerated lifetime tests in 80°C saline for 2 weeks. We demonstrate a basic proof-of-concept using stimulation with tens of microamps of current delivered to the sciatic nerve in rat to produce a motor response.

  15. Structured Antireflective Coating for Silicon at Submillimeter Frequencies

    Science.gov (United States)

    Padilla, Estefania

    2018-01-01

    Observations at millimeter and submillimeter wavelengths are useful for many astronomical studies, such as the polarization of the cosmic microwave background or the formation and evolution of galaxy clusters. In order to allow observations over a broad spectral bandwidth (approximatively from 70 to 420 GHz), innovative broadband anti-reflective (AR) optics must be utilized in submillimeter telescopes. Due to its low loss and high refractive index, silicon is a fine optical material at these frequencies, but an AR coating with multiple layers is required to maximize its transmission over a wide bandwidth. Structured multilayer AR coatings for silicon are currently being developed at Caltech and JPL. The development process includes the design of the structured layers with commercial electromagnetic simulation software, the fabrication by using deep reactive ion etching, and the test of the transmission and reflection of the patterned wafers. Geometrical 3D patterns have successfully been etched at the surface of the silicon wafers creating up to 2 layers with different effective refractive indices. The transmission and reflection of single AR layer wafers, measured between 75 and 330 GHz, are close to the simulation predictions. These results allow the development of new designs with 5 or 6 AR layers in order to improve the bandwidth and transmission of the silicon AR coatings.

  16. An ALMA Survey of Submillimeter Galaxies in the Extended Chandra Deep Field South : Source Catalog and Multiplicity

    NARCIS (Netherlands)

    Hodge, J.; Karim, A.; Smail, I.; Swinbank, A.; Walter, F.; Biggs, A.; Ivison, R.; Weiss, A.; Alexander, D.; Bertoldi, F.; Brandt, W.; Chapman, S.; Coppin, K.; Cox, P.; Danielson, A.; Dannerbauer, H.; De, Breuck C.; Decarli, R.; Edge, A.; Greve, T.; Knudsen, K.; Menten, K.; Rix, H.; Schinnerer, E.; Simpson, J.; Wardlow, J.; Werf, van der P.P.

    2013-01-01

    We present an Atacama Large Millimeter/submillimeter Array (ALMA) Cycle 0 survey of 126 submillimeter sources from the LABOCA ECDFS Submillimeter Survey (LESS). Our 870 {$μ$}m survey with ALMA (ALESS) has produced maps ~{}3{ imes} deeper and with a beam area ~{}200{ imes} smaller than the original

  17. Copper atomic-scale transistors

    Directory of Open Access Journals (Sweden)

    Fangqing Xie

    2017-03-01

    Full Text Available We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4 in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate. The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (Ubias influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1G0 (G0 = 2e2/h; with e being the electron charge, and h being Planck’s constant or 2G0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

  18. Graphene thermal flux transistor.

    Science.gov (United States)

    Shafranjuk, S E

    2016-11-24

    Insufficient flexibility of existing approaches to controlling the thermal transport in atomic monolayers limits their capability for use in many applications. Here, we examine the means of electrode doping to control the thermal flux Q due to phonons propagating along the atomic monolayer. We found that the frequency of the electron-restricted phonon scattering strongly depends on the concentration nC. of the electric charge carriers, established by the electric potentials applied to local gates. As a result of the electrode doping, nC is increased, causing a sharp rise in both the electrical conductivity and Seebeck coefficient, while the thermal conductivity tumbles. Therefore, the effect of the thermal transistor improves the figure of merit of nanoelectronic circuits.

  19. Multipass millimeter/submillimeter spectrometer to probe dissociative reaction dynamics.

    Science.gov (United States)

    Laas, Jacob C; Hays, Brian M; Widicus Weaver, Susanna L

    2013-10-03

    We present here the instrument design and first experimental results from a multipass millimeter/submillimeter spectrometer designed to probe dissociative reaction dynamics. This work focuses on benchmarking the instrument performance through detection of the CH3O and H2CO products from methanol dissociation induced by a high-voltage plasma discharge. Multiple rotational lines from CH3O and H2CO were observed when this plasma discharge was applied to a sample of methanol vapor seeded in an argon supersonic expansion. The rotational temperature of the dissociation products and their abundance with respect to methanol were determined using a Boltzmann analysis. The minimum detectable absorption coefficient for this instrument was determined to be αmin ≤ 5 × 10(-9) cm(-1). We discuss these results in the context of future applications of this instrument to the study of photodissociation branching ratios for small organic molecules that are important in complex interstellar chemistry.

  20. High-Sensitivity AGN Polarimetry at Sub-Millimeter Wavelengths

    Directory of Open Access Journals (Sweden)

    Ivan Martí-Vidal

    2017-10-01

    Full Text Available The innermost regions of radio loud Active Galactic Nuclei (AGN jets are heavily affected by synchrotron self-absorption, due to the strong magnetic fields and high particle densities in these extreme zones. The only way to overcome this absorption is to observe at sub-millimeter wavelengths, although polarimetric observations at such frequencies have so far been limited by sensitivity and calibration accuracy. However, new generation instruments such as the Atacama Large mm/sub-mm Array (ALMA overcome these limitations and are starting to deliver revolutionary results in the observational studies of AGN polarimetry. Here we present an overview of our state-of-the-art interferometric mm/sub-mm polarization observations of AGN jets with ALMA (in particular, the gravitationally-lensed sources PKS 1830−211 and B0218+359, which allow us to probe the magneto-ionic conditions at the regions closest to the central black holes.

  1. Status of MUSIC, the MUltiwavelength Sub/millimeter Inductance Camera

    Science.gov (United States)

    Golwala, Sunil R.; Bockstiegel, Clint; Brugger, Spencer; Czakon, Nicole G.; Day, Peter K.; Downes, Thomas P.; Duan, Ran; Gao, Jiansong; Gill, Amandeep K.; Glenn, Jason; Hollister, Matthew I.; LeDuc, Henry G.; Maloney, Philip R.; Mazin, Benjamin A.; McHugh, Sean G.; Miller, David; Noroozian, Omid; Nguyen, Hien T.; Sayers, Jack; Schlaerth, James A.; Siegel, Seth; Vayonakis, Anastasios K.; Wilson, Philip R.; Zmuidzinas, Jonas

    2012-09-01

    We present the status of MUSIC, the MUltiwavelength Sub/millimeter Inductance Camera, a new instrument for the Caltech Submillimeter Observatory. MUSIC is designed to have a 14', diffraction-limited field-of-view instrumented with 2304 detectors in 576 spatial pixels and four spectral bands at 0.87, 1.04, 1.33, and 1.98 mm. MUSIC will be used to study dusty star-forming galaxies, galaxy clusters via the Sunyaev-Zeldovich effect, and star formation in our own and nearby galaxies. MUSIC uses broadband superconducting phased-array slot-dipole antennas to form beams, lumpedelement on-chip bandpass filters to define spectral bands, and microwave kinetic inductance detectors to sense incoming light. The focal plane is fabricated in 8 tiles consisting of 72 spatial pixels each. It is coupled to the telescope via an ambient-temperature ellipsoidal mirror and a cold reimaging lens. A cold Lyot stop sits at the image of the primary mirror formed by the ellipsoidal mirror. Dielectric and metal-mesh filters are used to block thermal infrared and out-ofband radiation. The instrument uses a pulse tube cooler and 3He/ 3He/4He closed-cycle cooler to cool the focal plane to below 250 mK. A multilayer shield attenuates Earth's magnetic field. Each focal plane tile is read out by a single pair of coaxes and a HEMT amplifier. The readout system consists of 16 copies of custom-designed ADC/DAC and IF boards coupled to the CASPER ROACH platform. We focus on recent updates on the instrument design and results from the commissioning of the full camera in 2012.

  2. SUBMILLIMETER FOLLOW-UP OF WISE-SELECTED HYPERLUMINOUS GALAXIES

    Energy Technology Data Exchange (ETDEWEB)

    Wu Jingwen; Eisenhardt, Peter R. M.; Stern, Daniel; Assef, Roberto [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109 (United States); Tsai, Chao-Wei; Cutri, Roc; Griffith, Roger; Jarrett, Thomas [Infrared Processing and Analysis Center, California Institute of Technology, Pasadena, CA 91125 (United States); Sayers, Jack; Bridge, Carrie [Division of Physics, Math and Astronomy, California Institute of Technology, Pasadena, CA 91125 (United States); Benford, Dominic [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Blain, Andrew [Department of Physics and Astronomy, University of Leicester, LE1 7RH Leicester (United Kingdom); Petty, Sara; Lake, Sean [Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA 90095 (United States); Bussmann, Shane [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, MS78, Cambridge, MA 02138 (United States); Comerford, Julia M.; Evans, Neal J. II [Department of Astronomy, University of Texas, Austin, TX 78731 (United States); Lonsdale, Carol [National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903 (United States); Rho, Jeonghee [SETI Institute, 189 BERNARDO Avenue, Mountain View, CA 94043 (United States); Stanford, S. Adam, E-mail: jingwen.wu@jpl.nasa.gov [Department of Physics, University of California Davis, One Shields Avenue, Davis, CA 95616 (United States); and others

    2012-09-01

    We have used the Caltech Submillimeter Observatory (CSO) to follow-up a sample of Wide-field Infrared Survey Explorer (WISE) selected, hyperluminous galaxies, the so-called W1W2-dropout galaxies. This is a rare ({approx}1000 all-sky) population of galaxies at high redshift (peaks at z = 2-3), which are faint or undetected by WISE at 3.4 and 4.6 {mu}m, yet are clearly detected at 12 and 22 {mu}m. The optical spectra of most of these galaxies show significant active galactic nucleus activity. We observed 14 high-redshift (z > 1.7) W1W2-dropout galaxies with SHARC-II at 350-850 {mu}m, with nine detections, and observed 18 with Bolocam at 1.1 mm, with five detections. Warm Spitzer follow-up of 25 targets at 3.6 and 4.5 {mu}m, as well as optical spectra of 12 targets, are also presented in the paper. Combining WISE data with observations from warm Spitzer and CSO, we constructed their mid-IR to millimeter spectral energy distributions (SEDs). These SEDs have a consistent shape, showing significantly higher mid-IR to submillimeter ratios than other galaxy templates, suggesting a hotter dust temperature. We estimate their dust temperatures to be 60-120 K using a single-temperature model. Their infrared luminosities are well over 10{sup 13} L{sub Sun }. These SEDs are not well fitted with existing galaxy templates, suggesting they are a new population with very high luminosity and hot dust. They are likely among the most luminous galaxies in the universe. We argue that they are extreme cases of luminous, hot dust-obscured galaxies (DOGs), possibly representing a short evolutionary phase during galaxy merging and evolution. A better understanding of their long-wavelength properties needs ALMA as well as Herschel data.

  3. EXPLORING THE RELATION BETWEEN (SUB-)MILLIMETER RADIATION AND {gamma}-RAY EMISSION IN BLAZARS WITH PLANCK AND FERMI

    Energy Technology Data Exchange (ETDEWEB)

    Leon-Tavares, J.; Tornikoski, M.; Laehteenmaeki, A. [Aalto University Metsaehovi Radio Observatory, Metsaehovintie 114, FIN-02540 Kylmaelae (Finland); Valtaoja, E. [Tuorla Observatory, Department of Physics and Astronomy, University of Turku, 20100 Turku (Finland); Giommi, P.; Polenta, G.; Gasparrini, D.; Cutini, S., E-mail: leon@kurp.hut.fi [ASI Science Data Center, ASDC c/o ESRIN, via G. Galilei, 00044 Frascati (Italy)

    2012-07-20

    The coexistence of Planck and Fermi satellites in orbit has enabled the exploration of the connection between the (sub-)millimeter and {gamma}-ray emission in a large sample of blazars. We find that the {gamma}-ray emission and the (sub-)mm luminosities are correlated over five orders of magnitude, L{sub {gamma}}{proportional_to}L{sub (sub-)mm}. However, this correlation is not significant at some frequency bands when simultaneous observations are considered. The most significant statistical correlations, on the other hand, arise when observations are quasi-simultaneous within two months. Moreover, we find that sources with an approximate spectral turnover in the middle of the mm-wave regime are more likely to be strong {gamma}-ray emitters. These results suggest a physical relation between the newly injected plasma components in the jet and the high levels of {gamma}-ray emission.

  4. Submillimeter observations of the sun from the James Clerk Maxwell Telescope

    Energy Technology Data Exchange (ETDEWEB)

    Lindsey, C.A.; Yee, S.; Roellig, T.L.; Hills, R.; Brock, D. (Hawaii Univ., Honolulu (USA) NASA, Ames Research Center, Moffett Field, CA (USA) Mullard Radio Astronomy Observatory, Cambridge (England) Joint Astronomy Centre, Hilo, HI (USA))

    1990-04-01

    The first submillimeter solar observations from the 15 m James Clerk Maxwell Telescope (JCMT) on Mauna Kea are reported. The JCMT submillimeter heterodyne receiver is used to observe the sun in 850 micron radiation. These are the first submillimeter observations of features on the size scale of the chromospheric supergranular network and of sunspots. A comparison is made between 850 micron images and calcium K line images of the chromospheric supergranular network in the quiet sun and in plage. Images of sunspots are given, noting that their 850 micron brightness is comparable to, or somewhat greater than, that of the quiet sun. 7 refs.

  5. Submillimeter observations of the sun from the James Clerk Maxwell Telescope

    Science.gov (United States)

    Lindsey, Charles A.; Yee, Selwyn; Roellig, Thomas L.; Hills, Richard; Brock, David

    1990-01-01

    The first submillimeter solar observations from the 15 m James Clerk Maxwell Telescope (JCMT) on Mauna Kea are reported. The JCMT submillimeter heterodyne receiver is used to observe the sun in 850 micron radiation. These are the first submillimeter observations of features on the size scale of the chromospheric supergranular network and of sunspots. A comparison is made between 850 micron images and calcium K line images of the chromospheric supergranular network in the quiet sun and in plage. Images of sunspots are given, noting that their 850 micron brightness is comparable to, or somewhat greater than, that of the quiet sun.

  6. Far-Infrared and Submillimeter Emission from Galactic and Extragalactic Photodissociation Regions

    Science.gov (United States)

    Kaufman, Michael J.; Wolfire, Mark G.; Hollenbach, David J.; Luhman, Michael L.

    1999-12-01

    Photodissociation region (PDR) models are computed over a wide range of physical conditions, from those appropriate to giant molecular clouds illuminated by the interstellar radiation field to the conditions experienced by circumstellar disks very close to hot massive stars. These models use the most up-to-date values of atomic and molecular data, the most current chemical rate coefficients, and the newest grain photoelectric heating rates, which include treatments of small grains and large molecules. In addition, we examine the effects of metallicity and cloud extinction on the predicted line intensities. Results are presented for PDR models with densities over the range n=101-107 cm-3 and for incident far-ultraviolet radiation fields over the range G0=10-0.5-106.5 (where G0 is the far-ultravioliet [FUV] flux in units of the local interstellar value), for metallicities Z=1 and 0.1 times the local Galactic value, and for a range of PDR cloud sizes. We present line strength and/or line ratio plots for a variety of useful PDR diagnostics: [C II] 158 μm, [O I] 63 μm and 145 μm, [C I] 370 μm and 609 μm, CO J=1-0, J=2-1, J=3-2, J=6-5, and J=15-14, as well as the strength of the far-infrared continuum. These plots will be useful for the interpretation of Galactic and extragalactic far-infrared and submillimeter spectra observable with the Infrared Space Observatory (ISO), the Stratospheric Observatory for Infrared Astronomy, the Submillimeter Wave Astronomy Satellite, the Far Infrared and Submillimeter Telescope, and other orbital and suborbital platforms. As examples, we apply our results to ISO and ground-based observations of M82, NGC 278, and the Large Magellanic Cloud. Our comparison of the conditions in M82 and NGC 278 show that both the gas density and FUV flux are enhanced in the starburst nucleus of M82 compared with those in the normal spiral NGC 278. We model the high [C II]/CO ratio observed in the 30 Doradus region of the LMC and find that it can be

  7. Superconducting Microwave Resonator Arrays for Submillimeter/Far-Infrared Imaging

    Science.gov (United States)

    Noroozian, Omid

    Superconducting microwave resonators have the potential to revolutionize submillimeter and far-infrared astronomy, and with it our understanding of the universe. The field of low-temperature detector technology has reached a point where extremely sensitive devices like transition-edge sensors are now capable of detecting radiation limited by the background noise of the universe. However, the size of these detector arrays are limited to only a few thousand pixels. This is because of the cost and complexity of fabricating large-scale arrays of these detectors that can reach up to 10 lithographic levels on chip, and the complicated SQUID-based multiplexing circuitry and wiring for readout of each detector. In order to make substantial progress, next-generation ground-based telescopes such as CCAT or future space telescopes require focal planes with large-scale detector arrays of 104--10 6 pixels. Arrays using microwave kinetic inductance detectors (MKID) are a potential solution. These arrays can be easily made with a single layer of superconducting metal film deposited on a silicon substrate and pattered using conventional optical lithography. Furthermore, MKIDs are inherently multiplexable in the frequency domain, allowing ˜ 10 3 detectors to be read out using a single coaxial transmission line and cryogenic amplifier, drastically reducing cost and complexity. An MKID uses the change in the microwave surface impedance of a superconducting thin-film microresonator to detect photons. Absorption of photons in the superconductor breaks Cooper pairs into quasiparticles, changing the complex surface impedance, which results in a perturbation of resonator frequency and quality factor. For excitation and readout, the resonator is weakly coupled to a transmission line. The complex amplitude of a microwave probe signal tuned on-resonance and transmitted on the feedline past the resonator is perturbed as photons are absorbed in the superconductor. The perturbation can be

  8. Logarithmic current-measuring transistor circuits

    DEFF Research Database (Denmark)

    Højberg, Kristian Søe

    1967-01-01

    Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

  9. EVIDENCE FOR ENVIRONMENTAL CHANGES IN THE SUBMILLIMETER DUST OPACITY

    Energy Technology Data Exchange (ETDEWEB)

    Martin, Peter G.; Roy, Arabindo; Miville-Deschenes, Marc-Antoine [Canadian Institute for Theoretical Astrophysics, University of Toronto, 60 St. George Street, Toronto, ON M5S 3H8 (Canada); Bontemps, Sylvain [Observatoire de Bordeaux, BP 89, F-33270 Floirac (France); Ade, Peter A. R.; Griffin, Matthew; Hargrave, Peter C.; Mauskopf, Philip [Department of Physics and Astronomy, Cardiff University, 5 The Parade, Cardiff, CF24 3AA (United Kingdom); Bock, James J. [Jet Propulsion Laboratory, Pasadena, CA 91109-8099 (United States); Chapin, Edward L.; Halpern, Mark; Marsden, Gaelen [Department of Physics and Astronomy, University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1 (Canada); Devlin, Mark J.; Dicker, Simon R.; Klein, Jeff [Department of Physics and Astronomy, University of Pennsylvania, 209 South 33rd Street, Philadelphia, PA 19104 (United States); Gundersen, Joshua O. [Department of Physics, University of Miami, 1320 Campo Sano Drive, Carol Gables, FL 33146 (United States); Hughes, David H. [Instituto Nacional de Astrofisica Optica y Electronica (INAOE), Aptdo. Postal 51 y 72000 Puebla (Mexico); Netterfield, Calvin B. [Department of Astronomy and Astrophysics, University of Toronto, 50 St. George Street, Toronto, ON M5S 3H4 (Canada); Olmi, Luca [INAF, Osservatorio Astrofisico di Arcetri, Largo E. Fermi 5, I-50125 (Italy); Patanchon, Guillaume [Laboratoire APC, 10, rue Alice Domon et Leonie Duquet F-75205 Paris (France); and others

    2012-05-20

    The submillimeter opacity of dust in the diffuse interstellar medium (ISM) in the Galactic plane has been quantified using a pixel-by-pixel correlation of images of continuum emission with a proxy for column density. We used multi-wavelength continuum data: three Balloon-borne Large Aperture Submillimeter Telescope bands at 250, 350, and 500 {mu}m and one IRAS band at 100 {mu}m. The proxy is the near-infrared color excess, E(J - K{sub s}), obtained from the Two Micron All Sky Survey. Based on observations of stars, we show how well this color excess is correlated with the total hydrogen column density for regions of moderate extinction. The ratio of emission to column density, the emissivity, is then known from the correlations, as a function of frequency. The spectral distribution of this emissivity can be fit by a modified blackbody, whence the characteristic dust temperature T and the desired opacity {sigma}{sub e}(1200) at 1200 GHz or 250 {mu}m can be obtained. We have analyzed 14 regions near the Galactic plane toward the Vela molecular cloud, mostly selected to avoid regions of high column density (N{sub H} > 10{sup 22} cm{sup -2}) and small enough to ensure a uniform dust temperature. We find {sigma}{sub e}(1200) is typically (2-4) Multiplication-Sign 10{sup -25} cm{sup 2} H{sup -1} and thus about 2-4 times larger than the average value in the local high Galactic latitude diffuse atomic ISM. This is strong evidence for grain evolution. There is a range in total power per H nucleon absorbed (and re-radiated) by the dust, reflecting changes in the strength of the interstellar radiation field and/or the dust absorption opacity. These changes in emission opacity and power affect the equilibrium T, which is typically 15 K, colder than at high latitudes. Our analysis extends, to higher opacity and lower temperature, the trend of increasing {sigma}{sub e}(1200) with decreasing T that was found at high latitudes. The recognition of changes in the emission opacity

  10. Magnetic Vortex Based Transistor Operations

    Science.gov (United States)

    Kumar, D.; Barman, S.; Barman, A.

    2014-02-01

    Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan-out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT).

  11. Magnetic Vortex Based Transistor Operations

    Science.gov (United States)

    Kumar, D.; Barman, S.; Barman, A.

    2014-01-01

    Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan–out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT). PMID:24531235

  12. Mapping brain activity with flexible graphene micro-transistors

    CERN Document Server

    Blaschke, Benno M; Guimerà-Brunet, Anton; Weinert, Julia; Rousseau, Lionel; Heimann, Axel; Drieschner, Simon; Kempski, Oliver; Villa, Rosa; Sanchez-Vives, Maria V; Garrido, Jose A

    2016-01-01

    Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical activity, however, evidence important shortcomings, e.g. challenging high density integration. Solution-gated field-effect transistors (SGFETs), on the other hand, could overcome these shortcomings if a suitable transistor material were available. Graphene is particularly attractive due to its biocompatibility, chemical stability, flexibility, low intrinsic electronic noise and high charge carrier mobilities. Here, we report on the use of an array of flexible graphene SGFETs for recording spontaneous slow waves, as well as visually evoked and also pre-epileptic activity in vivo in rats. The flexible array of graphene SGFETs allows mapping brain electrical activity with excellent signal-to-noise ratio (SNR), suggesting that this technology could lay the foundation for a future gene...

  13. Mapping brain activity with flexible graphene micro-transistors

    Science.gov (United States)

    Blaschke, Benno M.; Tort-Colet, Núria; Guimerà-Brunet, Anton; Weinert, Julia; Rousseau, Lionel; Heimann, Axel; Drieschner, Simon; Kempski, Oliver; Villa, Rosa; Sanchez-Vives, Maria V.; Garrido, Jose A.

    2017-06-01

    Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical activity, however, evidence important shortcomings, e.g. challenging high density integration. Solution-gated field-effect transistors (SGFETs), on the other hand, could overcome these shortcomings if a suitable transistor material were available. Graphene is particularly attractive due to its biocompatibility, chemical stability, flexibility, low intrinsic electronic noise and high charge carrier mobilities. Here, we report on the use of an array of flexible graphene SGFETs for recording spontaneous slow waves, as well as visually evoked and also pre-epileptic activity in vivo in rats. The flexible array of graphene SGFETs allows mapping brain electrical activity with excellent signal-to-noise ratio (SNR), suggesting that this technology could lay the foundation for a future generation of in vivo recording implants.

  14. Deciphering Debris Disk Structure with the Submillimeter Array

    Science.gov (United States)

    MacGregor, Meredith Ann

    2018-01-01

    More than 20% of nearby main sequence stars are surrounded by dusty disks continually replenished via the collisional erosion of planetesimals, larger bodies similar to asteroids and comets in our own Solar System. The material in these ‘debris disks’ is directly linked to the larger bodies such as planets in the system. As a result, the locations, morphologies, and physical properties of dust in these disks provide important probes of the processes of planet formation and subsequent dynamical evolution. Observations at millimeter wavelengths are especially critical to our understanding of these systems, since they are dominated by larger grains that do not travel far from their origin and therefore reliably trace the underlying planetesimal distribution. The Submillimeter Array (SMA) plays a key role in advancing our understanding of debris disks by providing sensitivity at the short baselines required to determine the structure of wide-field disks, such as the HR 8799 debris disk. Many of these wide-field disks are among the closest systems to us, and will serve as cornerstone templates for the interpretation of more distant, less accessible systems.

  15. Submillimeter Imaging of Dust Around Main Sequence Stars

    Science.gov (United States)

    Jewitt, David

    1998-01-01

    This grant was to image circumstellar dust disks surrounding main-sequence stars. The delivery of the SCUBA detector we had planned to use for this work was delayed repeatedly, leading us to undertake a majority of the observations with the UKT14 submillimeter detector at the JCMT (James Clerk Maxwell Telescope) and optical imagers and a coronagraph at the University of Hawaii 2.2-m telescope. Major findings under this grant include: (1) We discovered 5 asymmetries in the beta Pictoris regenerated dust disk. The discovery of these asymmetries was a surprise, since smearing due to Keplerian shear should eliminate most such features on timescales of a few thousand years. One exception is the "wing tilt" asymmetry, which we interpret as due to the scattering phase function of dust disk particles. From the wing tilt and a model of the phase function, we find a disk plane inclination to the line of sight of JCMT). It is possible, for instance, that the main 850 micro-m blob is merely a galaxy or other high-z source projected onto the beta Pic mid-plane.

  16. Extending the Millimeter-Submillimeter Spectrum of Protonated Formaldehyde

    Science.gov (United States)

    Roenitz, Kevin; Zou, Luyao; Widicus Weaver, Susanna L.

    2017-06-01

    Protonated formaldehyde has been detected in the interstellar medium, where it participates in the formation and destruction of methanol. The rotational spectrum for protonated formaldehyde has been previously recorded by Amano and coworkers from 120-385 GHz using a hollow cathode discharge source for ion production. Additionally, protonated formaldehyde was produced in a supersonic expansion discharge source by Duncan and coworkers, but it was detected using time-of-flight mass spectrometry. Higher frequency spectra would help to guide additional observational studies of protonated formaldehyde using instruments such as the ALMA and SOFIA observatories. As such, we have used a supersonic expansion discharge source to produce protonated formaldehyde, and recorded its spectrum using millimeter-submillimeter direct absorption spectroscopy. The rotational spectrum was recorded from 350-1000 GHz. Here we will present the experimental design, specifically focusing on the optimization of the source for production of organic ions. We will also present the spectroscopic results for protonated formaldehyde and a spectral analysis with associated prediction that can be extended to frequencies above 1 THz.

  17. Submillimeter Spectroscopy of the R Coronae Australis Molecular Cloud Region

    Science.gov (United States)

    Dunn, Marina Madeline; Walker, Christopher K.; Pat, Terrance; Sirsi, Siddhartha; Swift, Brandon J.; Peters, William L.

    2018-01-01

    The Interstellar Medium is comprised of large amounts of gas and dust which coalesce to form stars. Observing in the Terahertz regime of the electromagnetic spectrum, approximately 0.3 -300 microns, allows astronomers to study the ISM in unprecedented detail. Using the high spectral resolution imaging system of the SuperCam receiver, a 64-pixel array previously installed on the Submillimeter Telescope on Mt. Graham, AZ, we have begun a 500 square degree survey of the galactic plane. This instrument was designed to do a complete survey of the Milky Way from the ground, with the main focus being to observe two specific transitions of the carbon monoxide molecule, 12CO(3-2) and 13CO(3-2), at 345 GHz. In this work, we present results from these observations for the R Coronae Australis (R Cr A) complex, a region in the southern hemisphere of the sky, using spectroscopic data from a portion of the survey to gain better insight into the life cycle of the ISM. The majority of stars being formed here are similar to the stellar class of the Sun, making it an excellent area of observing interest. Using these results, we attempt to better ascertain the large-scale structure and kinematics inside of the molecular cloud.

  18. Faint submillimeter galaxies revealed by multifield deep ALMA observations: number counts, spatial clustering, and a dark submillimeter line emitter

    Energy Technology Data Exchange (ETDEWEB)

    Ono, Yoshiaki; Ouchi, Masami; Momose, Rieko [Institute for Cosmic Ray Research, The University of Tokyo, Kashiwa, Chiba 277-8582 (Japan); Kurono, Yasutaka, E-mail: ono@icrr.u-tokyo.ac.jp [Joint ALMA Observatory, Alonso de Cordova 3107, Vitacura, Santiago 763-0355 (Chile)

    2014-11-01

    We present the statistics of faint submillimeter/millimeter galaxies (SMGs) and serendipitous detections of a submillimeter/millimeter line emitter (SLE) with no multi-wavelength continuum counterpart revealed by the deep ALMA observations. We identify faint SMGs with flux densities of 0.1-1.0 mJy in the deep Band-6 and Band-7 maps of 10 independent fields that reduce cosmic variance effects. The differential number counts at 1.2 mm are found to increase with decreasing flux density down to 0.1 mJy. Our number counts indicate that the faint (0.1-1.0 mJy, or SFR{sub IR} ∼ 30-300 M {sub ☉} yr{sup –1}) SMGs contribute nearly a half of the extragalactic background light (EBL), while the remaining half of the EBL is mostly contributed by very faint sources with flux densities of <0.1 mJy (SFR{sub IR} ≲ 30 M {sub ☉} yr{sup –1}). We conduct counts-in-cells analysis with multifield ALMA data for the faint SMGs, and obtain a coarse estimate of galaxy bias, b {sub g} < 4. The galaxy bias suggests that the dark halo masses of the faint SMGs are ≲ 7 × 10{sup 12} M {sub ☉}, which is smaller than those of bright (>1 mJy) SMGs, but consistent with abundant high-z star-forming populations, such as sBzKs, LBGs, and LAEs. Finally, we report the serendipitous detection of SLE-1, which has no continuum counterparts in our 1.2 mm-band or multi-wavelength images, including ultra deep HST/WFC3 and Spitzer data. The SLE has a significant line at 249.9 GHz with a signal-to-noise ratio of 7.1. If the SLE is not a spurious source made by the unknown systematic noise of ALMA, the strong upper limits of our multi-wavelength data suggest that the SLE would be a faint galaxy at z ≳ 6.

  19. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun

    2016-01-01

    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  20. Bipolar Transistor Based on Graphane

    Energy Technology Data Exchange (ETDEWEB)

    Gharekhanlou, B; Tousaki, S B; Khorasani, S, E-mail: khorasani@sharif.ed [School of Electrical Engineering, Sharif University of Technology, PO Box 11365-9363, Tehran (Iran, Islamic Republic of)

    2010-11-01

    Graphane is a semiconductor with an energy gap, obtained from hydrogenation of the two-dimensional grapheme sheet. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of doping graphane, p and n regions can be defined so that p-n junctions become feasible with small reverse currents. Our recent analysis has shown that an ideal I-V characteristic for this type of junctions may be expected. Here, we predict the behavior of bipolar juncrion transistors based on graphane. Profiles of carriers and intrinsic parameters of the graphane transistor are calculated and discussed.

  1. Silicon on insulator self-aligned transistors

    Science.gov (United States)

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  2. An alma survey of submillimeter galaxies in the extended Chandra deep field-south: The agn fraction and X-ray properties of submillimeter galaxies

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S. X.; Brandt, W. N.; Luo, B. [Department of Astronomy and Astrophysics, 525 Davey Lab, The Pennsylvania State University, University Park, PA 16802 (United States); Smail, I.; Alexander, D. M.; Danielson, A. L. R.; Karim, A.; Simpson, J. M.; Swinbank, A. M. [Institute for Computational Cosmology, Durham University, South Road, Durham DH1 3LE (United Kingdom); Hodge, J. A.; Walter, F. [Max-Planck Institute for Astronomy, Königstuhl 17, D-69117 Heidelberg (Germany); Lehmer, B. D. [The Johns Hopkins University, Homewood Campus, Baltimore, MD 21218 (United States); Wardlow, J. L. [Department of Physics and Astronomy, University of California, Irvine, CA 92697 (United States); Xue, Y. Q. [Key Laboratory for Research in Galaxies and Cosmology, Center for Astrophysics, Department of Astronomy, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, Anhui 230026 (China); Chapman, S. C. [Institute of Astronomy, University of Cambridge, Madingley Road, Cambridge CB3 0HA (United Kingdom); Coppin, K. E. K. [Centre for Astrophysics, Science and Technology Research Institute, University of Hertfordshire, Hatfield AL10 9AB (United Kingdom); Dannerbauer, H. [Universität Wien, Institute für Astrophysik, Türkenschanzstraße 17, 1180 Wien (Austria); De Breuck, C. [European Southern Observatory, Karl-Schwarzschild Straße 2, D-85748 Garching (Germany); Menten, K. M. [Max-Planck-Institut für Radioastronomie, Auf dem Hügel 69, D-53121 Bonn (Germany); Van der Werf, P., E-mail: xxw131@psu.edu, E-mail: niel@astro.psu.edu [Leiden Observatory, Leiden University, P.O. Box 9513, NL-2300 RA Leiden (Netherlands)

    2013-12-01

    The large gas and dust reservoirs of submillimeter galaxies (SMGs) could potentially provide ample fuel to trigger an active galactic nucleus (AGN), but previous studies of the AGN fraction in SMGs have been controversial largely due to the inhomogeneity and limited angular resolution of the available submillimeter surveys. Here we set improved constraints on the AGN fraction and X-ray properties of the SMGs with Atacama Large Millimeter/submillimeter Array (ALMA) and Chandra observations in the Extended Chandra Deep Field-South (E-CDF-S). This study is the first among similar works to have unambiguously identified the X-ray counterparts of SMGs; this is accomplished using the fully submillimeter-identified, statistically reliable SMG catalog with 99 SMGs from the ALMA LABOCA E-CDF-S Submillimeter Survey. We found 10 X-ray sources associated with SMGs (median redshift z = 2.3), of which eight were identified as AGNs using several techniques that enable cross-checking. The other two X-ray detected SMGs have levels of X-ray emission that can be plausibly explained by their star formation activity. Six of the eight SMG-AGNs are moderately/highly absorbed, with N {sub H} > 10{sup 23} cm{sup –2}. An analysis of the AGN fraction, taking into account the spatial variation of X-ray sensitivity, yields an AGN fraction of 17{sub −6}{sup +16}% for AGNs with rest-frame 0.5-8 keV absorption-corrected luminosity ≥7.8 × 10{sup 42} erg s{sup –1}; we provide estimated AGN fractions as a function of X-ray flux and luminosity. ALMA's high angular resolution also enables direct X-ray stacking at the precise positions of SMGs for the first time, and we found four potential SMG-AGNs in our stacking sample.

  3. Photon-triggered nanowire transistors

    Science.gov (United States)

    Kim, Jungkil; Lee, Hoo-Cheol; Kim, Kyoung-Ho; Hwang, Min-Soo; Park, Jin-Sung; Lee, Jung Min; So, Jae-Pil; Choi, Jae-Hyuck; Kwon, Soon-Hong; Barrelet, Carl J.; Park, Hong-Gyu

    2017-10-01

    Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 106. A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.

  4. Submillimeter Galaxies as Progenitors of Compact Quiescent Galaxies

    Science.gov (United States)

    Toft, S.; Smolcic, V.; Magnelli, B.; Karim, A.; Zirm, A.; Michalowski, M.; Capak, P.; Sheth, K.; Schawinski, K.; Krogager, J.-K.; hide

    2014-01-01

    Three billion years after the big bang (at redshift z = 2), half of the most massive galaxies were already old, quiescent systems with little to no residual star formation and extremely compact with stellar mass densities at least an order of magnitude larger than in low-redshift ellipticals, their descendants. Little is known about how they formed, but their evolved, dense stellar populations suggest formation within intense, compact starbursts 1-2 Gyr earlier (at 3 < z < 6). Simulations show that gas-rich major mergers can give rise to such starbursts, which produce dense remnants. Submillimeter-selected galaxies (SMGs) are prime examples of intense, gas-rich starbursts.With a new, representative spectroscopic sample of compact, quiescent galaxies at z = 2 and a statistically well-understood sample of SMGs, we show that z = 3-6 SMGs are consistent with being the progenitors of z = 2 quiescent galaxies, matching their formation redshifts and their distributions of sizes, stellar masses, and internal velocities. Assuming an evolutionary connection, their space densities also match if the mean duty cycle of SMG starbursts is 42(sup+40) -29 Myr (consistent with independent estimates), which indicates that the bulk of stars in these massive galaxies were formed in a major, early surge of star formation. These results suggest a coherent picture of the formation history of the most massive galaxies in the universe, from their initial burst of violent star formation through their appearance as high stellar-density galaxy cores and to their ultimate fate as giant ellipticals.

  5. Evidence for Dust Clearing Through Resolved Submillimeter Imaging

    Science.gov (United States)

    Brown, J. M.; Blake, G. A.; Qi, C.; Dullemond, C. P.; Wilner, D. J.; Williams, J. P.

    2009-10-01

    Mid-infrared spectrophotometric observations have revealed a small subclass of circumstellar disks with spectral energy distributions (SEDs) suggestive of large inner gaps with low dust content. However, such data provide only an indirect and model-dependent method of finding central holes. Imaging of protoplanetry disks provides an independent check of SED modeling. We present here the direct characterization of three 33-47 AU radii inner gaps, in the disks around LkHα 330, SR 21N, and HD 135344B, via 340 GHz (880 μm) dust continuum aperture synthesis observations obtained with the Submillimeter Array (SMA). The large gaps are fully resolved at ~0farcs3 by the SMA data and mostly empty of dust, with less than (1-7.5) × 10-6 M sun of fine grained solids inside the holes. Gas (as traced by atomic accretion markers and CO 4.7 μm rovibrational emission) is still present in the inner regions of all three disks. For each, the inner hole exhibits a relatively steep rise in dust emission to the outer disk, a feature more likely to originate from the gravitational influence of a companion body than from a process expected to show a more shallow gradient like grain growth. Importantly, the good agreement between the spatially resolved data and spectrophotometry-based models lends confidence to current interpretations of SEDs, wherein the significant dust emission deficits arise from disks with inner gaps or holes. Further SED-based searches can therefore be expected to yield numerous additional candidates that can be examined at high spatial resolution.

  6. Submillimeter galaxies as progenitors of compact quiescent galaxies

    Energy Technology Data Exchange (ETDEWEB)

    Toft, S.; Zirm, A.; Krogager, J.-K.; Man, A. W. S. [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Mariesvej 30, DK-2100 Copenhagen (Denmark); Smolčić, V.; Krpan, J. [Physics Department, University of Zagreb, Bijenička cesta 32, 10002 Zagreb (Croatia); Magnelli, B.; Karim, A. [Argelander Institute for Astronomy, Auf dem Hügel 71, Bonn, D-53121 (Germany); Michalowski, M. [Scottish Universities Physics Alliance, Institute for Astronomy, University of Edinburgh, Royal Observatory, Edinburgh, EH9 3HJ (United Kingdom); Capak, P. [Spitzer Science Center, 314-6 Caltech, 1201 East California Boulevard, Pasadena, CA 91125 (United States); Sheth, K. [National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903 (United States); Schawinski, K. [ETH Zurich, Institute for Astronomy, Department of Physics, Wolfgang-Pauli-Strasse 27, CH-8093 Zurich (Switzerland); Wuyts, S.; Lutz, D.; Staguhn, J.; Berta, S. [MPE, Postfach 1312, D-85741 Garching (Germany); Sanders, D. [Institute for Astronomy, 2680 Woodlawn Drive, University of Hawaii, Honolulu, HI 96822 (United States); Mccracken, H. [Institut dAstrophysique de Paris, UMR7095 CNRS, Universite Pierre et Marie Curie, 98 bis Boulevard Arago, F-75014 Paris (France); Riechers, D., E-mail: sune@dark-cosmology.dk [Department of Astronomy, Cornell University, 220 Space Sciences Building, Ithaca, NY 14853 (United States)

    2014-02-20

    Three billion years after the big bang (at redshift z = 2), half of the most massive galaxies were already old, quiescent systems with little to no residual star formation and extremely compact with stellar mass densities at least an order of magnitude larger than in low-redshift ellipticals, their descendants. Little is known about how they formed, but their evolved, dense stellar populations suggest formation within intense, compact starbursts 1-2 Gyr earlier (at 3 < z < 6). Simulations show that gas-rich major mergers can give rise to such starbursts, which produce dense remnants. Submillimeter-selected galaxies (SMGs) are prime examples of intense, gas-rich starbursts. With a new, representative spectroscopic sample of compact, quiescent galaxies at z = 2 and a statistically well-understood sample of SMGs, we show that z = 3-6 SMGs are consistent with being the progenitors of z = 2 quiescent galaxies, matching their formation redshifts and their distributions of sizes, stellar masses, and internal velocities. Assuming an evolutionary connection, their space densities also match if the mean duty cycle of SMG starbursts is 42{sub −29}{sup +40} Myr (consistent with independent estimates), which indicates that the bulk of stars in these massive galaxies were formed in a major, early surge of star formation. These results suggest a coherent picture of the formation history of the most massive galaxies in the universe, from their initial burst of violent star formation through their appearance as high stellar-density galaxy cores and to their ultimate fate as giant ellipticals.

  7. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

  8. Josephson junction spectrum analyzer for millimeter and submillimeter wavelengths

    Energy Technology Data Exchange (ETDEWEB)

    Larkin, S.Y.; Anischenko, S.E.; Khabayev, P.V. [State Research Center, Kiev (Ukraine)

    1994-12-31

    A prototype of the Josephson-effect spectrum analyzer developed for the millimeter-wave band is described. The measurement results for spectra obtained in the frequency band from 50 to 250 GHz are presented.

  9. Mu-Spec: A High Performance Compact Spectrometer for Submillimeter Astronomy

    Science.gov (United States)

    Hsieh, Wen-Ting; Moseley, Harvey; Stevenson, Thomas; Brown, Ari; Patel, Amil; U-yen, Kongpop; Ehsan, Negar; Cataldo, Giuseppe; Wollack, Ed

    2012-01-01

    We describe the Mu-Spec, an extremely compact high performance spectrometer for the submillimeter and millimeter spectral ranges. We have designed a fully integrated submillimeter spectrometer based on superconducting microstrip technology and fabricated its critical elements. Using low loss transmission lines, we can produce a fully integrated high resolution submillimeter spectrometer on a single four inch Si wafer. A resolution of 500 can readily be achieved with standard fabrication tolerance, higher with phase trimming. All functions of the spectrometer are integrated - light is coupled to the microstrip circuit with a planar antenna, the spectra discrimination is achieved using a synthetic grating, orders are separated using a built-in planar filter, and the light is detected using photon counting Microwave Kinetic Inductance Detectors (MKID). We will discus the design principle of the instrument, describe its technical advantages, and report the progress on the development of the instrument.

  10. Micro-Spec: A High Performance Compact Spectrometer for Submillimeter Astronomy

    Science.gov (United States)

    Hsieh, Wen-Ting; Moseley, Harvey; Stevenson, Thomas; Brown, Ari; Patel, Amil; U-Yen, Kongpop; Ehsan, Negar; Caltado, Giuseppe; Wollock, Edward

    2012-01-01

    We describe the micro-Spec, an extremely compact high performance spectrometer for the submillimeter and millimeter spectral ranges. We have designed a fully integrated submillimeter spectrometer based on superconducting microstrip technology and fabricated its critical elements. Using low loss transmission lines, we can produce a fully integrated high resolution submillimeter spectrometer on a single four inch Si wafer. A resolution of 500 can readily be achieved with standard fabrication tolerance, higher with phase trimming. All functions of the spectrometer are integrated - light is coupled to the micro strip circuit with a planar antenna, the spectra discrimination is achieved using a synthetic grating, orders are separated using a built-in planar filter, and the light is detected using photon counting Microwave Kinetic Inductance Detectors (MKID). We will discus the design principle of the instrument, describe its technical advantages, and report the progress on the development of the instrument.

  11. SMA Submillimeter Observations of HL Tau: Revealing a Compact Molecular Outflow

    Science.gov (United States)

    Lumbreras, Alba M.; Zapata, Luis A.

    2014-04-01

    We present archival high angular resolution (~2'') 12CO(3-2) line and continuum submillimeter observations of the young stellar object HL Tau made with the Submillimeter Array. The 12CO(3-2) line observations reveal the presence of a compact and wide opening angle bipolar outflow with a northeast to southwest orientation (P.A. = 50°) that is associated with the optical and infrared jet emanating from HL Tau with a similar orientation. On the other hand, the 850 μm continuum emission observations exhibit a strong and compact source in the position of HL Tau that has a spatial size of ~200 × 70 AU with a P.A. = 145° and a dust mass of around 0.1 M ⊙. These physical parameters are in agreement with values obtained recently from millimeter observations. This submillimeter source is therefore related to the disk surrounding HL Tau.

  12. SMA submillimeter observations of HL Tau: revealing a compact molecular outflow

    Energy Technology Data Exchange (ETDEWEB)

    Lumbreras, Alba M.; Zapata, Luis A. [Centro de Radioastronomía y Astrofísica, UNAM, Morelia (Mexico)

    2014-04-01

    We present archival high angular resolution (∼2'') {sup 12}CO(3-2) line and continuum submillimeter observations of the young stellar object HL Tau made with the Submillimeter Array. The {sup 12}CO(3-2) line observations reveal the presence of a compact and wide opening angle bipolar outflow with a northeast to southwest orientation (P.A. = 50°) that is associated with the optical and infrared jet emanating from HL Tau with a similar orientation. On the other hand, the 850 μm continuum emission observations exhibit a strong and compact source in the position of HL Tau that has a spatial size of ∼200 × 70 AU with a P.A. = 145° and a dust mass of around 0.1 M {sub ☉}. These physical parameters are in agreement with values obtained recently from millimeter observations. This submillimeter source is therefore related to the disk surrounding HL Tau.

  13. The SCUBA-2 Cosmology Legacy Survey: Multi-wavelength Properties of ALMA-identified Submillimeter Galaxies in UKIDSS UDS

    NARCIS (Netherlands)

    Simpson, J. M.; Smail, Ian; Swinbank, A. M.; Ivison, R. J.; Dunlop, J. S.; Geach, J. E.; Almaini, O.; Arumugam, V.; Bremer, M. N.; Chen, Chian-Chou; Conselice, C.; Coppin, K. E. K.; Farrah, D.; Ibar, E.; Hartley, W. G.; Ma, C. J.; Michałowski, M. J.; Scott, D.; Spaans, M.; Thomson, A. P.; van der Werf, P. P.

    2017-01-01

    We present a multi-wavelength analysis of 52 submillimeter galaxies (SMGs), identified using ALMA 870 μm continuum imaging in a pilot program to precisely locate bright SCUBA-2-selected submillimeter sources in the UKIDSS Ultra Deep Survey (UDS) field. Using the available deep (especially

  14. Submillimeter-Wave Polarimetric Compact Ranges for Scale-Model Radar Measurements

    National Research Council Canada - National Science Library

    Coulombe, Michael J; Waldman, Jerry; Giles, R. H; Gatesman, Andrew J; Goyette, Thomas M; Nixon, William

    2002-01-01

    .... A dielectric material fabrication and characterization capability has also been developed to fabricate custom anechoic materials for the ranges as well as scaled dielectric parts for the models and clutter scenes...

  15. Superconducting Coplanar Waveguide Filters for Submillimeter Wave On-Chip Filterbank Spectrometers

    NARCIS (Netherlands)

    Endo, A.; Yates, S. J. C.; Bueno, J.; Thoen, D. J.; Murugesan, V.; Baryshev, A. M.; Klapwijk, T. M.; van der Werf, P. P.; Baselmans, J. J. A.

    2016-01-01

    We show the first experimental results which prove that superconducting NbTiN coplanar-waveguide resonators can achieve a loaded Q factor in excess of 800 in the 350 GHz band. These resonators can be used as narrow band pass filters for on-chip filter bank spectrometers for astronomy. Moreover, the

  16. Superconducting Coplanar Waveguide Filters for Submillimeter Wave On-Chip Filterbank Spectrometers

    NARCIS (Netherlands)

    Endo, A.; Yates, S.J.C.; Bueno, J.; Thoen, D.J.; Murugesan, V.; Baryshev, A.M.; Klapwijk, T.M.; Van der Werf, P.P.; Baselmans, J.J.A.

    2016-01-01

    We show the first experimental results which prove that superconducting NbTiN coplanar–waveguide resonators can achieve a loaded Q factor in excess of 800 in the 350 GHz band. These resonators can be used as narrow band pass filters for on-chip filter bank spectrometers for astronomy. Moreover, the

  17. Atmospheric Attenuation of Millimeter and Submillimeter Waves: Models and Computer Code

    Science.gov (United States)

    1979-10-15

    oli i (f o.tl olwn ,.,...ssŕ𔄀: TZ - a.Th ai prnite enurdbn MI0l0- a -- tSU VtsR bu h aaee o rprac i satrn rp-c i- bji’l Tlw M 11--P disi, ribiut iont...Contract NAS-5-21624. iaan, Mei-Yuan (19 ) Microstructure of c-ujulus clouds, Isv. Geophys. 8er. No. 2:362-376, tUogg, D.C. and Chu , T S. (1975) The role

  18. Comprehensive Submillimeter Wave Studies of the Isotopic Species of a Major Weed: Methyl Formate

    Science.gov (United States)

    Margulès, L.; Motiyenko, R.; Huet, T. R.; Coudert, L. H.; Kleiner, I.; Carvajal, M.; Mollendal, H.; Guillemin, J.-C.

    2010-06-01

    Complex organic molecules are relatively heavy, their maximum absorption is in the millimetric domain at about 300 GHz. But the most abondant, like methyl formate, could be detected in the ISM up to 900 GHz. We will present here the last results obtained about the two 18O and the doubly-deuterated species of methyl formate. This concludes the systematic investigation up to 660 GHz for the mono-substituted isotopic species with either 13C, 18O, or D, which began in 2006. The lines from these isotopic species will certainly be present in the spectra which will be recorded in the next years with the very sensitive telescope ALMA, HERSHEL and SOFIA. The detection of isotopic species is very important for the astrophysical community to improve the interstellar chemical modeling and to understand the formation mechanism of these complex organic molecules. Our interest was also on the theoretical aspects. Like other complex organic molecules, methyl formate displays a large amplitude motion. Here it is the rotation of the methyl group with respect to the rest of the molecule. Theoretical models were developed to reproduce accurately the observed frequencies for large quantum numbers values as J-values as high as 70 could be reached. Similarly the investigation of the doubly-deuterated HCOOCHD_2 was undertaken to test the model developed for mono-deuterated HCOOCH_2D. This work is supported by ANR-08-BLAN-0054 and ANR-08-BLAN-0225. C. Comito, P. Schilke, T. G. Phillips, et al., Astrophys. J. Supp. 156 (2005) 127. L. Margulès, L. H. Coudert, H. Mollendal, et al., J. Mol. Spec. 254 (2009) 55.

  19. Millimeter/submillimeter-wave spectrum of the VCl(+) radical in its X (4)Sigma(-) ground state.

    Science.gov (United States)

    Halfen, D T; Ziurys, L M

    2009-11-26

    The pure rotational spectrum of the molecular ion VCl(+) (X (4)Sigma(-)) has been recorded from 274 to 419 GHz using a combination of millimeter direct absorption and velocity modulation spectroscopy. This study is the first spectroscopic measurement of this species in the laboratory, which has also enabled the determination of the ground state term, (4)Sigma(-). VCl(+) was produced in an AC discharge of VCl(4) and argon. Fifteen and eleven rotational transitions were recorded for the V(35)Cl(+) and V(37)Cl(+) isotopologues, respectively. The fine structure splittings of the (4)Sigma(-) state were found to deviate significantly from a case (b) pattern. Specifically, spin components from adjacent rotational transitions were found to overlap in frequency. Unusual vanadium hyperfine splittings were also observed in the VCl(+) spectra; the expected vanadium octet was clearly present for the F(2) and F(3) spin components but was partially collapsed and reversed in frequency ordering in the F(1) and F(4) cases. The data were analyzed in a global fit, and rotational, fine structure, and hyperfine constants were determined. For VCl(+), the values of both the spin-spin and spin-rotation parameters are extremely large, as were the third-order hyperfine and spin-rotation terms, b(s) and gamma(s). For example, the spin-spin constant is lambda = 417 900(22 700) MHz, while gamma = 6567(51) MHz. The values of these constants indicate a high density of excited electronic states close to the ground state, which contribute to second and third-order spin-orbit coupling. The hyperfine constants suggest a sigma(1)pi(2) electron configuration, as opposed to sigma(1)delta(2), as found in VS and VO. The bond length of VCl(+), r(0) = 2.119(2) A, is shorter than that of VCl by 0.1 A, which has r(0) = 2.219 A. The decrease in bond length is attributed to an increase in the electrostatic attraction between V(2+) and Cl(-), as opposed to V(+) and Cl(-) for VCl.

  20. Recent results on measurement of plasma conductivity using Faraday rotation of submillimeter waves

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmenko, P.J.; Self, S.A.

    1982-01-01

    This paper examines the application of Faraday rotation to the measurement of electron concentration in combustion MHD plasmas. Details on the design of a working system are given including the selection of operating wavelength. A theoretical comparison between the Faraday rotation technique and two path interferometry shows Faraday rotation in its simplest form to be somewhat less sensitive to changes in electron concentration. This deficit can be balanced against greater immunity to vibration and thermal drift. Improved techniques of measuring the rotation angle promise greater sensitivity. A preliminary experiment has verified the technique.

  1. Modelling and Simulation of Magnetron Infection Guns for Submillimeter Wave Gyrotrons

    OpenAIRE

    S.P.SABCHEVSKI; G.M.Mladenov; IDEHARA, T

    1999-01-01

    The software package GUN-MIG has been developed for computer simulation of beam formation in magnetron injection guns (MIG). It is based on a fully relativistic self-consistent physical model which takes into account the specific problems and requirements that are being encountered in the analysis and design of MIG for gyrotrons. Besides providing a general outline of the physical models and the program implementation of the code, several illustrative examples of the numerical experiments wit...

  2. Systems and Science Studies for Millimeter- and Submillimeter-wave Earth Venture Missions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The plan to develop a cost-compliant EV-i instrument concept entails developing a science and instrument-performance trade space that considers channel selection,...

  3. Laboratory permittivity measurements of icy planetary analogs in the millimeter and submillimeter domains, in relation with JUICE mission.

    Science.gov (United States)

    Brouet, Y.; Jacob, K.; Murk, A.; Poch, O.; Pommerol, A.; Thomas, N.; Levasseur-Regourd, A. C.

    2015-12-01

    The European Space Agency's JUpiter ICy moons Explorer (JUICE) spacecraft is planned for launch in 2022 and arrival at Jupiter in 2030. It will observe the planet Jupiter and three of its largest moons, Ganymede, Callisto and Europa. One instrument on the JUICE spacecraft is the Sub-millimeter Wave Instrument (SWI), which will measure brightness temperatures from Jupiter's stratosphere and troposphere, and from subsurfaces of Jupiter's icy moons. In the baseline configuration SWI consists of two tunable sub-millimeter wave receivers operating from 530 to 625 GHz. As an alternative one of the receivers could cover the range of 1080 and 1275 GHz. Inversion models are strongly dependent on the knowledge of the complex relative permittivity (hereafter permittivity) of the target material to retrieve the physical properties of the subsurface (e.g. [1][2]). We set up a laboratory experiment allowing us to perform reproducible measurements of the complex scattering parameters S11 and S21 in the ranges of 70 to 110 GHz, of 100 to 160 GHz, of 140 to 220 GHz, of 140 to 220 GHz and of 510 to 715 GHz. These scattering parameters can be used to retrieve the permittivity of icy analogs of the surfaces and subsurfaces of Jupiter's icy moons in order to prepare the data interpretation of SWI [3]. The measurements are performed under laboratory conditions with a quasi-optical bench (Institute of Applied Physics, University of Bern). The icy analogs that we prepare in the Laboratory for Outflow Studies of Sublimating Materials (LOSSy, Physics Institute, University of Bern), include two different porous water ice samples composed of fine-grained ice particles with a size range of 4 to 6 microns and ice particles with a size range of 50 to 100 microns [4][5]; and possibly CO2 ice. We will present the general experimental set-up and the first results in the context to prepare the data interpretation of SWI. [1] Ulaby, F. T., Long, D. G., 2014. Microwave radar and radiometric remote

  4. Internal rupture and rapid bouncing of impacting drops induced by submillimeter-scale textures

    Science.gov (United States)

    Zhang, Rui; Zhang, Xiwen; Hao, Pengfei; He, Feng

    2017-06-01

    We demonstrate an internal breakup mechanism for high Weber number drop impact on superhydrophobic surfaces uniformly patterned with submillimeter-scale textures, in which the liquid film ruptures from both interior and rim. The employment of submillimeter-scale posts could help decrease the critical Weber number of internal rupture, due to the small solid fraction and the large dimension ratio between primary structures and droplets. The internal rupture is found to promote more rapid drop bouncing than conventional rebound and rim breakup on superhydrophobic surfaces with small roughness, with a 10%-50% reduction of contact time. The internal rupture results from the film instability inside and the jet instability outside.

  5. Internal rupture and rapid bouncing of impacting drops induced by submillimeter-scale textures.

    Science.gov (United States)

    Zhang, Rui; Zhang, Xiwen; Hao, Pengfei; He, Feng

    2017-06-01

    We demonstrate an internal breakup mechanism for high Weber number drop impact on superhydrophobic surfaces uniformly patterned with submillimeter-scale textures, in which the liquid film ruptures from both interior and rim. The employment of submillimeter-scale posts could help decrease the critical Weber number of internal rupture, due to the small solid fraction and the large dimension ratio between primary structures and droplets. The internal rupture is found to promote more rapid drop bouncing than conventional rebound and rim breakup on superhydrophobic surfaces with small roughness, with a 10%-50% reduction of contact time. The internal rupture results from the film instability inside and the jet instability outside.

  6. Complementary spin transistor using a quantum well channel

    OpenAIRE

    Youn Ho Park; Jun Woo Choi; Hyung-jun Kim; Joonyeon Chang; Suk Hee Han; Heon-Jin Choi; Hyun Cheol Koo

    2017-01-01

    In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors,...

  7. An alma survey of sub-millimeter galaxies in the extended Chandra deep field south: Sub-millimeter properties of color-selected galaxies

    Energy Technology Data Exchange (ETDEWEB)

    Decarli, R.; Walter, F.; Hodge, J. A.; Rix, H.-W.; Schinnerer, E. [Max-Planck Institut für Astronomie, Königstuhl 17, D-69117 Heidelberg (Germany); Smail, I.; Swinbank, A. M.; Karim, A.; Simpson, J. M. [Institute for Computational Cosmology, Durham University, South Road, Durham DH1 3LE (United Kingdom); Chapman, S. [Institute of Astronomy, University of Cambridge, Madingley Road, Cambridge CB3 0HA (United Kingdom); Coppin, K. E. K. [Centre for Astrophysics, Science and Technology Research Institute, University of Hertfordshire, Hatfield AL10 9AB (United Kingdom); Cox, P. [IRAM, 300 rue de la piscine, F-38406 Saint-Martin d' Hères (France); Dannerbauer, H. [Universität Wien, Institut für Astrophysik, Türenschanzstrasse 17, A-1180 Wien (Austria); Greve, T. R. [University College London, Department of Physics and Astronomy, Gower Street, London WC1E 6BT (United Kingdom); Ivison, R. [Institute for Astronomy, University of Edinburgh, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Knudsen, K. K.; Lindroos, L. [Department of Earth and Space Sciences, Chalmers University of Technology, Onsala Space Observatory, Onsala SE-439 92 (Sweden); Van der Werf, P. [Leiden Observatory, Leiden University, P.O. Box 9513, 2300 RA Leiden (Netherlands); Weiß, A., E-mail: decarli@mpia.de [Max-Planck Institut für Radioastronomie, Auf dem Hügel 69, D-53121 Bonn (Germany)

    2014-01-10

    We study the sub-millimeter properties of color-selected galaxies via a stacking analysis applied for the first time to interferometric data at sub-millimeter wavelengths. We base our study on 344 GHz ALMA continuum observations of ∼20''-wide fields centered on 86 sub-millimeter sources detected in the LABOCA Extended Chandra Deep Field South (ECDFS) Sub-millimeter Survey. We select various classes of galaxies (K-selected, star-forming sBzK galaxies, extremely red objects, and distant red galaxies) according to their optical/near-infrared fluxes. We find clear, >10σ detections in the stacked images of all these galaxy classes. We include in our stacking analysis Herschel/SPIRE data to constrain the dust spectral energy distribution of these galaxies. We find that their dust emission is well described by a modified blackbody with T {sub dust} ≈ 30 K and β = 1.6 and infrared luminosities of (5-11) × 10{sup 11} L {sub ☉} or implied star formation rates of 75-140 M {sub ☉} yr{sup –1}. We compare our results with those of previous studies based on single-dish observations at 870 μm and find that our flux densities are a factor 2-3 higher than previous estimates. The discrepancy is observed also after removing sources individually detected in ALESS maps. We report a similar discrepancy by repeating our analysis on 1.4 GHz observations of the whole ECDFS. Hence, we find tentative evidence that galaxies that are associated in projected and redshift space with sub-mm bright sources are brighter than the average population. Finally, we put our findings in the context of the cosmic star formation rate density as a function of redshift.

  8. COMPACT STARBURSTS IN z similar to 3-6 SUBMILLIMETER GALAXIES REVEALED BY ALMA

    NARCIS (Netherlands)

    Ikarashi, Soh; Ivison, R. J.; Caputi, Karina I.; Aretxaga, Itziar; Dunlop, James S.; Hatsukade, Bunyo; Hughes, David H.; Iono, Daisuke; Izumi, Takuma; Kawabe, Ryohei; Kohno, Kotaro; Lagos, Claudia D. P.; Motohara, Kentaro; Nakanishi, Kouichiro; Ohta, Kouji; Tamura, Yoichi; Umehata, Hideki; Wilson, Grant W.; Yabe, Kiyoto; Yun, Min S.

    2015-01-01

    We report the source size distribution, as measured by ALMA millimetric continuum imaging, of a sample of 13 AzTEC-selected submillimeter galaxies (SMGs) at z(phot) similar to 3-6. Their infrared luminosities and star formation rates (SFRs) are L-IR similar to, 2-6 x 10(12) L-circle dot and similar

  9. Transistors - From Point Contact to Single Electron

    Indian Academy of Sciences (India)

    Figure 1. Energy band diagram of metal-semi- conductor barrier on (a) n- type and (b) p-type semi- conductor. Abbreviations. FET - Field Effect Transistor. HEMT - High Electron Mobility. Transistor. MESFET - Metal Semiconductor. FET. MOSFET -. Metal Oxide. Semiconductor FET. MODFET - Modulation Doped. FET.

  10. Ultrasmall transistor-based light sources

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Tavares, Luciana; Kjelstrup-Hansen, Jakob

    Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip.......Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip....

  11. The spinvalve transistor: technologies and progress

    NARCIS (Netherlands)

    Lodder, J.C.; Monsma, D.J.; Vlutters, R.; Shimatsu, T.; Shimatsu, T.

    1999-01-01

    The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The

  12. Nanowire Field-Effect Transistors : Sensing Simplicity?

    NARCIS (Netherlands)

    Mescher, M.

    2014-01-01

    Silicon nanowires are structures made from silicon with at least one spatial dimension in the nanometer regime (1-100 nm). From these nanowires, silicon nanowire field-effect transistors can be constructed. Since their introduction in 2001 silicon nanowire field-effect transistors have been studied

  13. Determining the Concentrations and Temperatures of Products in a CF_4/CHF_3/N_2 Plasma via Submillimeter Absorption Spectroscopy

    Science.gov (United States)

    Helal, Yaser H.; Neese, Christopher F.; De Lucia, Frank C.; Ewing, Paul R.; Agarwal, Ankur; Craver, Barry; Stout, Phillip J.; Armacost, Michael D.

    2017-06-01

    Plasmas used for the manufacturing of semiconductor devices are similar in pressure and temperature to those used in the laboratory for the study of astrophysical species in the submillimeter (SMM) spectral region. The methods and technology developed in the SMM for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied and their spectra have been cataloged or are in the literature. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500-750 GHz radiation through a commercial inductively coupled plasma chamber. The measurement of transmission spectra was simultaneously fit for background and absorption signal. The measured absorption was used to calculate absolute densities and temperatures of polar species. Measurements for CHF_3, CF_2, FCN, HCN, and CN made in a CF_4/CHF_3/N_2 plasma will be presented. Temperature equilibrium among species will be shown and the common temperature is leveraged to obtain accurate density measurements for simultaneously observed species. The densities and temperatures of plasma species are studied as a function of plasma parameters, including flow rate, pressure, and discharge power.

  14. Millimeter-wave and Submillimeter-wave Spectra of Aminoacetonitrile in the Three Lowest Vibrational Excited States

    Energy Technology Data Exchange (ETDEWEB)

    Esposti, Claudio Degli; Dore, Luca; Melosso, Mattia [Dipartimento di Chimica “Giacomo Ciamician”, Università di Bologna, via Selmi 2, I-40126 Bologna (Italy); Kobayashi, Kaori [Department of Physics, Faculty of Science, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan); Fujita, Chiho; Ozeki, Hiroyuki, E-mail: ozeki@env.sci.toho-u.ac.jp [Department of Environmental Science, Faculty of Science, Toho University, 2-2-1 Miyama, Funabashi, 274-8510 (Japan)

    2017-06-01

    It is important to study possible precursors of amino acids such as glycine to enable future searches in interstellar space. Aminoacetonitrile (NH{sub 2}CH{sub 2}CN) is one of the most feasible molecules for this purpose. This molecule was already detected toward Sgr B2(N). Aminoacetonitrile has a few low-lying vibrational excited states, and transitions within these states may be found in space. In this study, the pure-rotational transitions in the three lowest vibrational states in the 80–450 GHz range have been assigned and analyzed. It was found to be very important to include Coriolis coupling between the two lowest vibrational fundamentals, while the third one was unperturbed. The partition function was evaluated considering these new results.

  15. The quantum interference effect transistor.

    Science.gov (United States)

    Stafford, Charles A; Cardamone, David M; Mazumdar, Sumit

    2007-10-24

    We give a detailed discussion of the quantum interference effect transistor (QuIET), a proposed device which exploits the interference between electron paths through aromatic molecules to modulate the current flow. In the off state, perfect destructive interference stemming from the molecular symmetry blocks the current, while in the on state, the current is allowed to flow by locally introducing either decoherence or elastic scattering. Details of a model calculation demonstrating the efficacy of the QuIET are presented, and various fabrication scenarios are proposed, including the possibility of using conducting polymers to connect the QuIET with multiple leads.

  16. Photovoltage field-effect transistors

    Science.gov (United States)

    Adinolfi, Valerio; Sargent, Edward H.

    2017-02-01

    The detection of infrared radiation enables night vision, health monitoring, optical communications and three-dimensional object recognition. Silicon is widely used in modern electronics, but its electronic bandgap prevents the detection of light at wavelengths longer than about 1,100 nanometres. It is therefore of interest to extend the performance of silicon photodetectors into the infrared spectrum, beyond the bandgap of silicon. Here we demonstrate a photovoltage field-effect transistor that uses silicon for charge transport, but is also sensitive to infrared light owing to the use of a quantum dot light absorber. The photovoltage generated at the interface between the silicon and the quantum dot, combined with the high transconductance provided by the silicon device, leads to high gain (more than 104 electrons per photon at 1,500 nanometres), fast time response (less than 10 microseconds) and a widely tunable spectral response. Our photovoltage field-effect transistor has a responsivity that is five orders of magnitude higher at a wavelength of 1,500 nanometres than that of previous infrared-sensitized silicon detectors. The sensitization is achieved using a room-temperature solution process and does not rely on traditional high-temperature epitaxial growth of semiconductors (such as is used for germanium and III-V semiconductors). Our results show that colloidal quantum dots can be used as an efficient platform for silicon-based infrared detection, competitive with state-of-the-art epitaxial semiconductors.

  17. Voltage regulator for battery power source. [using a bipolar transistor

    Science.gov (United States)

    Black, J. M. (Inventor)

    1979-01-01

    A bipolar transistor in series with the battery as the control element also in series with a zener diode and a resistor is used to maintain a predetermined voltage until the battery voltage decays to very nearly the predetermined voltage. A field effect transistor between the base of the bipolar transistor and a junction between the zener diode and resistor regulates base current of the bipolar transistor, thereby regulating the conductivity of the bipolar transistor for control of the output voltage.

  18. Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor

    OpenAIRE

    Jiang, Jie; Wan, Qing; Sun, Jia; Dou, Wei; Zhang, Qing

    2012-01-01

    Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor field-effect transistors contain p-n junctions to control the current, depending on applied biases across the junctions. Thin-film transistors need metal-semiconductor junctions for injecting and extracting electrons from their channels. Here, by coating a heavily-d...

  19. Protonic transistors from thin reflectin films

    Directory of Open Access Journals (Sweden)

    David D. Ordinario

    2015-01-01

    Full Text Available Ionic transistors from organic and biological materials hold great promise for bioelectronics applications. Thus, much research effort has focused on optimizing the performance of these devices. Herein, we experimentally validate a straightforward strategy for enhancing the high to low current ratios of protein-based protonic transistors. Upon reducing the thickness of the transistors’ active layers, we increase their high to low current ratios 2-fold while leaving the other figures of merit unchanged. The measured ratio of 3.3 is comparable to the best values found for analogous devices. These findings underscore the importance of the active layer geometry for optimum protonic transistor functionality.

  20. Basic matrix algebra and transistor circuits

    CERN Document Server

    Zelinger, G

    1963-01-01

    Basic Matrix Algebra and Transistor Circuits deals with mastering the techniques of matrix algebra for application in transistors. This book attempts to unify fundamental subjects, such as matrix algebra, four-terminal network theory, transistor equivalent circuits, and pertinent design matters. Part I of this book focuses on basic matrix algebra of four-terminal networks, with descriptions of the different systems of matrices. This part also discusses both simple and complex network configurations and their associated transmission. This discussion is followed by the alternative methods of de

  1. Direct measurement of additional Ar-H2O vibration-rotation-tunneling bands in the millimeter-submillimeter range

    Science.gov (United States)

    Zou, Luyao; Widicus Weaver, Susanna L.

    2016-06-01

    Three new weak bands of the Ar-H2O vibration-rotation-tunneling spectrum have been measured in the millimeter wavelength range. These bands were predicted from combination differences based on previously measured bands in the submillimeter region. Two previously reported submillimeter bands were also remeasured with higher frequency resolution. These new measurements allow us to obtain accurate information on the Coriolis interaction between the 101 and 110 states. Here we report these results and the associated improved molecular constants.

  2. Ground-Based Submillimeter Spectroscopic Cosmological Surveys and Synergies with Space FIR Surveys

    Science.gov (United States)

    Spinoglio, Luigi

    2018-01-01

    To study the dust obscured processes of both star formation and black hole accretion during galaxy evolution and establish their role, as well as their mutual feedback processes, rest frame IR to submillimeter spectroscopy is needed. At these frequencies dust extinction is at its minimum and a variety of atomic and molecular transitions, tracing most astrophysical domains, occur. A large ground based submillimeter telescope with a large field of view and high sensitivity in the TeraHertz domain will pave the way of future FIR space telescope missions, such as SPICA in the late 2020's and the Origins Telescope later. I will present predictions demonstrating the synergies of such instruments to fully understand galaxy evolution, during its obscured phase, which has built most of the stellar populations in galaxies.

  3. Mu-Spec - A High Performance Ultra-Compact Photon Counting spectrometer for Space Submillimeter Astronomy

    Science.gov (United States)

    Moseley, H.; Hsieh, W.-T.; Stevenson, T.; Wollack, E.; Brown, A.; Benford, D.; Sadleir; U-Yen, I.; Ehsan, N.; Zmuidzinas, J.; hide

    2011-01-01

    We have designed and are testing elements of a fully integrated submillimeter spectrometer based on superconducting microstrip technology. The instrument can offer resolving power R approximately 1500, and its high frequency cutoff is set by the gap of available high performance superconductors. All functions of the spectrometer are integrated - light is coupled to the microstrip circuit with a planar antenna, the spectra discrimination is achieved using a synthetic grating, orders are separated using planar filter, and detected using photon counting MKID detector. This spectrometer promises to revolutionize submillimeter spectroscopy from space. It replaces instruments with the scale of 1m with a spectrometer on a 10 cm Si wafer. The reduction in mass and volume promises a much higher performance system within available resource in a space mission. We will describe the system and the performance of the components that have been fabricated and tested.

  4. The Status of MUSIC: A Multicolor Sub/millimeter MKID Instrument

    Science.gov (United States)

    Schlaerth, J. A.; Czakon, N. G.; Day, P. K.; Downes, T. P.; Duan, R.; Glenn, J.; Golwala, S. R.; Hollister, M. I.; LeDuc, H. G.; Maloney, P. R.; Mazin, B. A.; Nguyen, H. T.; Noroozian, O.; Sayers, J.; Siegel, S.; Zmuidzinas, J.

    2012-05-01

    We report on the recent progress of the Multicolor Submillimeter (kinetic) Inductance Camera, or MUSIC. MUSIC will use antenna-coupled Microwave Kinetic Inductance Detectors to observe in four colors (150 GHz, 230 GHz, 290 GHz and 350 GHz) with 2304 detectors, 576 per band, at the Caltech Submillimeter Observatory. It will deploy in 2012. Here we provide an overview of the instrument, focusing on the array design. We have also used a pathfinder demonstration instrument, DemoCam, to identify problems in advance of the deployment of MUSIC. In particular, we identified two major limiters of our sensitivity: out-of-band light directly coupling to the detectors (i.e. not through the antenna), effectively an excess load, and a large 1/f contribution from our amplifiers and electronics. We discuss the steps taken to mitigate these effects to reach background-limited performance (BLIP) in observation.

  5. The Hawaii SCUBA-2 Lensing Cluster Survey: Are Low-luminosity Submillimeter Galaxies Detected in the Rest-frame UV?

    Science.gov (United States)

    Hsu, Li-Yen; Cowie, Lennox L.; Barger, Amy J.; Wang, Wei-Hao

    2017-12-01

    In this third paper of the Hawaii SCUBA-2 Lensing Cluster Survey series, we present Submillimeter Array (SMA) detections of six intrinsically faint 850 μm sources detected in SCUBA-2 images of the lensing cluster fields, A1689, A2390, A370, MACS J0717.5+3745, and MACS J1423.8+2404. Two of the SCUBA-2 sources split into doublets, yielding a total of eight SMA detections. The intrinsic 870 μm flux densities of these submillimeter galaxies (SMGs) are ∼1 mJy. Five of the eight SMGs are not detected in optical or near-infrared (NIR) images. The NIR-to-submillimeter flux ratios of these faint SMGs suggest that most of them are extremely dusty and/or are at very high redshifts. By combining these SMGs and several other samples from the literature, we find a bimodal distribution for the faint sources in the space of submillimeter flux versus NIR-to-submillimeter flux ratio. While most of the SMA-detected lensed sources are very obscured, the other SMGs with similar flux densities are mostly bright in the NIR. Future Atacama Large Millimeter/submillimeter Array observations of a large sample of SCUBA-2 sources in cluster fields will allow us to decide whether or not the bimodality we observe here really exists.

  6. Logic gates with ion transistors

    Science.gov (United States)

    Grebel, H.

    2017-09-01

    Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If we ever want to create artificial bio-chemical circuitry, then we need to move a step further towards ion-logic circuitry. Here we demonstrate ion XOR and OR gates with electrochemical cells, and specifically, with two wet-cell batteries. In parallel to vacuum tubes, the batteries were modified to include a third, permeable and conductive mid electrode (the gate), which was placed between the anode and cathode in order to affect the ion flow through it. The key is to control the cell output with a much smaller biasing power, as demonstrated here. A successful demonstration points to self-powered ion logic gates.

  7. Ionic thermoelectric gating organic transistors

    Science.gov (United States)

    Zhao, Dan; Fabiano, Simone; Berggren, Magnus; Crispin, Xavier

    2017-01-01

    Temperature is one of the most important environmental stimuli to record and amplify. While traditional thermoelectric materials are attractive for temperature/heat flow sensing applications, their sensitivity is limited by their low Seebeck coefficient (∼100 μV K−1). Here we take advantage of the large ionic thermoelectric Seebeck coefficient found in polymer electrolytes (∼10,000 μV K−1) to introduce the concept of ionic thermoelectric gating a low-voltage organic transistor. The temperature sensing amplification of such ionic thermoelectric-gated devices is thousands of times superior to that of a single thermoelectric leg in traditional thermopiles. This suggests that ionic thermoelectric sensors offer a way to go beyond the limitations of traditional thermopiles and pyroelectric detectors. These findings pave the way for new infrared-gated electronic circuits with potential applications in photonics, thermography and electronic-skins. PMID:28139738

  8. Logic Gates with Ion Transistors

    CERN Document Server

    Grebel, Haim

    2016-01-01

    Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If we ever want to create artificial bio-chemical circuitry, then we need to move a step further towards ion-logic circuitry. Here we demonstrate ion XOR and OR gates with electrochemical cells, and specifically, with two wet-cell batteries. In parallel to vacuum tubes, the batteries were modified to include a third, permeable and conductive mid electrode (the gate), which was placed between the anode and cathode in order to affect the ion flow through it. The key is to control the cell output with a much smaller biasing power, as demonstrated here. A successful demonstration points to self-powered ion logic gates.

  9. Lateral power transistors in integrated circuits

    CERN Document Server

    Erlbacher, Tobias

    2014-01-01

    This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

  10. Thermal transistor utilizing gas-liquid transition.

    Science.gov (United States)

    Komatsu, Teruhisa S; Ito, Nobuyasu

    2011-01-01

    We propose a simple thermal transistor, a device to control heat current. In order to effectively change the current, we utilize the gas-liquid transition of the heat-conducting medium (fluid) because the gas region can act as a good thermal insulator. The three terminals of the transistor are located at both ends and the center of the system, and are put into contact with distinct heat baths. The key idea is a special arrangement of the three terminals. The temperature at one end (the gate temperature) is used as an input signal to control the heat current between the center (source, hot) and another end (drain, cold). Simulating the nanoscale systems of this transistor, control of heat current is demonstrated. The heat current is effectively cut off when the gate temperature is cold and it flows normally when it is hot. By using an extended version of this transistor, we also simulate a primitive application for an inverter.

  11. Pseudomorphic Bipolar Quantum Resonant-Tunneling Transistor

    National Research Council Canada - National Science Library

    Seabaugh, Alan C; Frensley, William R; Randall, John N; Reed, Mark A; Farrington, Dewey L; Matyi, Richard J

    1989-01-01

    ...+ InGaAs quantum well of a double-barrier resonant-tunneling structure. The heterojunction transistor consists of an n-GaAs emitter and collector, undoped AlAs tunnel barriers, and a pseudomorphic p...

  12. Logic gates based on ion transistors.

    Science.gov (United States)

    Tybrandt, Klas; Forchheimer, Robert; Berggren, Magnus

    2012-05-29

    Precise control over processing, transport and delivery of ionic and molecular signals is of great importance in numerous fields of life sciences. Integrated circuits based on ion transistors would be one approach to route and dispense complex chemical signal patterns to achieve such control. To date several types of ion transistors have been reported; however, only individual devices have so far been presented and most of them are not functional at physiological salt concentrations. Here we report integrated chemical logic gates based on ion bipolar junction transistors. Inverters and NAND gates of both npn type and complementary type are demonstrated. We find that complementary ion gates have higher gain and lower power consumption, as compared with the single transistor-type gates, which imitates the advantages of complementary logics found in conventional electronics. Ion inverters and NAND gates lay the groundwork for further development of solid-state chemical delivery circuits.

  13. Human brain diffusion tensor imaging at submillimeter isotropic resolution on a 3Tesla clinical MRI scanner.

    Science.gov (United States)

    Chang, Hing-Chiu; Sundman, Mark; Petit, Laurent; Guhaniyogi, Shayan; Chu, Mei-Lan; Petty, Christopher; Song, Allen W; Chen, Nan-kuei

    2015-09-01

    The advantages of high-resolution diffusion tensor imaging (DTI) have been demonstrated in a recent post-mortem human brain study (Miller et al., NeuroImage 2011;57(1):167-181), showing that white matter fiber tracts can be much more accurately detected in data at a submillimeter isotropic resolution. To our knowledge, in vivo human brain DTI at a submillimeter isotropic resolution has not been routinely achieved yet because of the difficulty in simultaneously achieving high resolution and high signal-to-noise ratio (SNR) in DTI scans. Here we report a 3D multi-slab interleaved EPI acquisition integrated with multiplexed sensitivity encoded (MUSE) reconstruction, to achieve high-quality, high-SNR and submillimeter isotropic resolution (0.85×0.85×0.85mm(3)) in vivo human brain DTI on a 3Tesla clinical MRI scanner. In agreement with the previously reported post-mortem human brain DTI study, our in vivo data show that the structural connectivity networks of human brains can be mapped more accurately and completely with high-resolution DTI as compared with conventional DTI (e.g., 2×2×2mm(3)). Copyright © 2015 Elsevier Inc. All rights reserved.

  14. Sideband-Separating, Millimeter-Wave Heterodyne Receiver

    Science.gov (United States)

    Ward, John S.; Bumble, Bruce; Lee, Karen A.; Kawamura, Jonathan H.; Chattopadhyay, Goutam; Stek, paul; Stek, Paul

    2010-01-01

    Researchers have demonstrated a submillimeter-wave spectrometer that combines extremely broad bandwidth with extremely high sensitivity and spectral resolution to enable future spacecraft to measure the composition of the Earth s troposphere in three dimensions many times per day at spatial resolutions as high as a few kilometers. Microwave limb sounding is a proven remote-sensing technique that measures thermal emission spectra from molecular gases along limb views of the Earth s atmosphere against a cold space background.

  15. Potential of carbon nanotube field effect transistors for analogue circuits

    KAUST Repository

    Hayat, Khizar

    2013-05-11

    This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET\\'s potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g m , f T and f max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

  16. Breakdown of transistors in Marx bank circuit

    Science.gov (United States)

    Chatterjee, Amitabh

    2000-09-01

    We reconsider the mode of operation of a Marx bank circuit and analyze the secondary breakdown of transistors with shorted emitter-base. The mechanism of breakdown of the transistor when a fast rising voltage pulse is applied across is investigated. The device exhibits chaotic behavior at the breakdown point where it can go into two possible modes of breakdown. A new explanation for the working of the circuit consistent with the experimental observations is proposed.

  17. Bipolar transistor in VESTIC technology: prototype

    Science.gov (United States)

    Mierzwiński, Piotr; Kuźmicz, Wiesław; Domański, Krzysztof; Tomaszewski, Daniel; Głuszko, Grzegorz

    2016-12-01

    VESTIC technology is an alternative for traditional CMOS technology. This paper presents first measurement data of prototypes of VES-BJT: bipolar transistors in VESTIC technology. The VES-BJT is a bipolar transistor on the SOI substrate with symmetric lateral structure and both emitter and collector made of polysilicon. The results indicate that VES-BJT can be a device with useful characteristics. Therefore, VESTIC technology has the potential to become a new BiCMOS-type technology with some unique properties.

  18. Temas de Física para Ingeniería: El transistor de unión

    OpenAIRE

    Beléndez Vázquez, Augusto; Pastor Antón, Carlos; Martín García, Agapito

    1990-01-01

    El transistor de unión bipolar. Tensiones y corrientes en el transistor. El transistor como amplificador. El transistor como conmutador. Transistores unipolares o de efecto de campo. El tiristor. Microelectrónica y circuitos integrados.

  19. The Submillimeter Array – current status and future plans

    Science.gov (United States)

    Blundell, Raymond

    2018-01-01

    The current SMA receiver systems were designed in the mid-1990s and have been operating for more than fifteen years. With regular upgrades to receivers, deployment of the SWARM correlator, expansion of the IF signal transport bandwidth via improvements to the analog IF signal processing hardware, and many other enhancements, the SMA currently greatly outperforms its original specifications in terms of sensitivity, instantaneous bandwidth, and availability of observing modes such as full-Stokes polarization and dual frequency operation.We have recently started to implement a three-year instrument upgrade plan, which we are calling the wSMA. The wSMA will offer even wider bandwidth operation than the current SMA and improved sensitivity. The major subsystems that will form the wSMA include significantly improved, dual polarization receiver cartridges housed in a new cryostat; local oscillator units incorporating modern mm-wave technology; an upgraded signal transmission system; and a further expansion of the SWARM correlator. The cryostat will be cooled by a low-maintenance pulse-tube cryocooler. Two dual-polarization receiver cartridges will cover approximately the same sky frequencies as the current receiver sets; the low-band receiver will be fed by an LO unit covering 210-270 GHz, and the high-band receiver will be fed by an LO covering 280-360 GHz. With a receiver IF band of 4-20 GHz, this will enable continuous sky frequency coverage from 190 GHz to 380 GHz.Details of the upgrade plans will be presented together with a discussion of scientific opportunities afforded by this upgrade, which, once implemented, will enable the SMA to continue to produce the highest quality science throughout the next decade.

  20. Unjuk Kerja Catu Daya 12 Volt 2a Dengan Pass Element Transistor Npn Dan Pnp

    OpenAIRE

    Fathoni, Fathoni

    2010-01-01

    Transistor pelewat (pass element transistor) yang dipasang pada rangkain catu daya yang menggunakan IC regulator 3 terminal adalah untuk booster arus output. Ada dua cara pemasangan transistor pelewat yang umum digunakan, yaitu dengan transistor pnp dan npn. Transistor pnp dipasang dengan basis transistor yang terhubung pada input IC regulator sedangkan transistor npn dipasang dengan basis transistor yang terhubung pada output IC regulator.Untuk mengetahui unjuk kerja dari kedua ...

  1. Gravitational lens models based on submillimeter array imaging of Herschel -selected strongly lensed sub-millimeter galaxies at z > 1.5

    Energy Technology Data Exchange (ETDEWEB)

    Bussmann, R. S.; Gurwell, M. A. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Pérez-Fournon, I. [Instituto de Astrofísica de Canarias (IAC), E-38200 La Laguna, Tenerife (Spain); Amber, S. [Department of Physical Sciences, The Open University, Milton Keynes MK7 6AA (United Kingdom); Calanog, J.; De Bernardis, F.; Wardlow, J. [Department of Physics and Astronomy, University of California, Irvine, CA 92697 (United States); Dannerbauer, H. [Laboratoire AIM-Paris-Saclay, CEA/DSM/Irfu-CNRS-Université Paris Diderot, CE-Saclay, pt courrier 131, F-91191 Gif-sur-Yvette (France); Fu, Hai [Department of Physics and Astronomy, The University of Iowa, 203 Van Allen Hall, Iowa City, IA 52242 (United States); Harris, A. I. [Department of Astronomy, University of Maryland, College Park, MD 20742-2421 (United States); Krips, M. [Institut de RadioAstronomie Millimétrique, 300 Rue de la Piscine, Domaine Universitaire, 38406 Saint Martin d' Hères (France); Lapi, A. [Department Fisica, Univ. Tor Vergata, Via Ricerca Scientifica 1, 00133 Rome, Italy and SISSA, Via Bonomea 265, 34136 Trieste (Italy); Maiolino, R. [Cavendish Laboratory, University of Cambridge, 19 J.J. Thomson Ave., Cambridge CB3 OHE (United Kingdom); Omont, A. [Institut d' Astrophysique de Paris, UMR 7095, CNRS, UPMC Univ. Paris 06, 98bis boulevard Arago, F-75014 Paris (France); Riechers, D. [Department of Astronomy, Space Science Building, Cornell University, Ithaca, NY 14853-6801 (United States); Baker, A. J. [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, 136 Frelinghuysen Rd, Piscataway, NJ 08854 (United States); Birkinshaw, M. [HH Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Bock, J. [California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125 (United States); and others

    2013-12-10

    Strong gravitational lenses are now being routinely discovered in wide-field surveys at (sub-)millimeter wavelengths. We present Submillimeter Array (SMA) high-spatial resolution imaging and Gemini-South and Multiple Mirror Telescope optical spectroscopy of strong lens candidates discovered in the two widest extragalactic surveys conducted by the Herschel Space Observatory: the Herschel-Astrophysical Terahertz Large Area Survey (H-ATLAS) and the Herschel Multi-tiered Extragalactic Survey (HerMES). From a sample of 30 Herschel sources with S {sub 500} > 100 mJy, 21 are strongly lensed (i.e., multiply imaged), 4 are moderately lensed (i.e., singly imaged), and the remainder require additional data to determine their lensing status. We apply a visibility-plane lens modeling technique to the SMA data to recover information about the masses of the lenses as well as the intrinsic (i.e., unlensed) sizes (r {sub half}) and far-infrared luminosities (L {sub FIR}) of the lensed submillimeter galaxies (SMGs). The sample of lenses comprises primarily isolated massive galaxies, but includes some groups and clusters as well. Several of the lenses are located at z {sub lens} > 0.7, a redshift regime that is inaccessible to lens searches based on Sloan Digital Sky Survey spectroscopy. The lensed SMGs are amplified by factors that are significantly below statistical model predictions given the 500 μm flux densities of our sample. We speculate that this may reflect a deficiency in our understanding of the intrinsic sizes and luminosities of the brightest SMGs. The lensed SMGs span nearly one decade in L {sub FIR} (median L {sub FIR} = 7.9 × 10{sup 12} L {sub ☉}) and two decades in FIR luminosity surface density (median Σ{sub FIR} = 6.0 × 10{sup 11} L {sub ☉} kpc{sup –2}). The strong lenses in this sample and others identified via (sub-)mm surveys will provide a wealth of information regarding the astrophysics of galaxy formation and evolution over a wide range in redshift.

  2. Millimeter/Submillimeter Spectroscopy of TiO (X3Δr): The Rare Titanium Isotopologues

    Science.gov (United States)

    Lincowski, A. P.; Halfen, D. T.; Ziurys, L. M.

    2016-12-01

    Pure rotational spectra of the rare isotopologues of titanium oxide, 46TiO, 47TiO, 49TiO, and 50TiO, have been recorded using a combination of Fourier transform millimeter-wave (FTmmW) and millimeter/submillimeter direct absorption techniques in the frequency range 62-538 GHz. This study is the first complete spectroscopic characterization of these species in their X 3Δ r ground electronic states. The isotopologues were created by the reaction of N2O or O2 and titanium vapor, produced either by laser ablation or in a Broida-type oven, and observed in the natural Ti isotopic abundances. Between 10 and 11 rotational transitions J + 1 ≤ftrightarrow J were measured for each species, typically in all 3 spin-orbit ladders Ω = 1, 2, and 3. For 47TiO and 49TiO, hyperfine structure was resolved, originating from the titanium-47 and titanium-49 nuclear spins of I = 5/2 and 7/2, respectively. For the Ω = 1 and 3 components, the hyperfine structure was found to follow a classic Landé pattern, while that for Ω = 2 appeared to be perturbed, likely a result of mixing with the nearby isoconfigurational a 1Δ state. The spectra were analyzed with a case (a) Hamiltonian, and rotational, spin-orbit, and spin-spin parameters were determined for each species, as well as magnetic hyperfine and electric quadrupole constants for the two molecules with nuclear spins. The most abundant species, 48TiO, has been detected in circumstellar envelopes. These measurements will enable other titanium isotopologues to be studied at millimeter wavelengths, providing Ti isotope ratios that can test models of nucleosynthesis.

  3. Complementary spin transistor using a quantum well channel

    Science.gov (United States)

    Park, Youn Ho; Choi, Jun Woo; Kim, Hyung-jun; Chang, Joonyeon; Han, Suk Hee; Choi, Heon-Jin; Koo, Hyun Cheol

    2017-01-01

    In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor. PMID:28425459

  4. Complementary spin transistor using a quantum well channel.

    Science.gov (United States)

    Park, Youn Ho; Choi, Jun Woo; Kim, Hyung-Jun; Chang, Joonyeon; Han, Suk Hee; Choi, Heon-Jin; Koo, Hyun Cheol

    2017-04-20

    In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.

  5. Organic tunnel field effect transistors

    KAUST Repository

    Tietze, Max Lutz

    2017-06-29

    Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.

  6. Radiation-induced edge effects in deep submicron CMOS transistors

    CERN Document Server

    Faccio, F

    2005-01-01

    The study of the TID response of transistors and isolation test structures in a 130 nm commercial CMOS technology has demonstrated its increased radiation tolerance with respect to older technology nodes. While the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at the edge of the transistor still leads to leakage currents and, for the narrow channel transistors, to significant threshold voltage shift-an effect that we call Radiation Induced Narrow Channel Effect (RINCE).

  7. Hafnium transistor design for neural interfacing.

    Science.gov (United States)

    Parent, David W; Basham, Eric J

    2008-01-01

    A design methodology is presented that uses the EKV model and the g(m)/I(D) biasing technique to design hafnium oxide field effect transistors that are suitable for neural recording circuitry. The DC gain of a common source amplifier is correlated to the structural properties of a Field Effect Transistor (FET) and a Metal Insulator Semiconductor (MIS) capacitor. This approach allows a transistor designer to use a design flow that starts with simple and intuitive 1-D equations for gain that can be verified in 1-D MIS capacitor TCAD simulations, before final TCAD process verification of transistor properties. The DC gain of a common source amplifier is optimized by using fast 1-D simulations and using slower, complex 2-D simulations only for verification. The 1-D equations are used to show that the increased dielectric constant of hafnium oxide allows a higher DC gain for a given oxide thickness. An additional benefit is that the MIS capacitor can be employed to test additional performance parameters important to an open gate transistor such as dielectric stability and ionic penetration.

  8. High Accuracy Transistor Compact Model Calibrations

    Energy Technology Data Exchange (ETDEWEB)

    Hembree, Charles E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Mar, Alan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Robertson, Perry J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirements require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.

  9. The boost transistor: a field plate controlled LDMOST

    NARCIS (Netherlands)

    Ferrara, A.; Schmitz, Jurriaan; Boksteen, B.K.; Hueting, Raymond Josephus Engelbart; Steeneken, P.G.; Heringa, A.; Claes, J.; van der Wel, A.P.

    2015-01-01

    In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in

  10. Discrete transistor measuring and matching using a solid core oven.

    Science.gov (United States)

    Inkinen, M; Mäkelä, K; Vuorela, T; Palovuori, K

    2013-03-01

    This paper presents transistor measurements done at a constant temperature. The aim in this research was to develop a reliable and repeatable method for measuring and searching transistor pairs with similar parameters, as in certain applications it is advantageous to use transistors from the same production batch due to the significant variability in batches from different manufacturers. Transistor manufacturing methods are well established, but due to the large variability in tolerance, not even transistors from the same manufacturing batch have identical properties. Transistors' electrical properties are also strongly temperature-dependent. Therefore, when measuring transistor properties, the temperature must be kept constant. For the measurement process, a solid-core oven providing stable temperature was implemented. In the oven, the base-to-emitter voltage (VBE) and DC-current gain (β) of 32 transistors could be measured simultaneously. The oven's temperature was controlled with a programmable thermostat, which allowed accurate constant temperature operation. The oven is formed by a large metal block with an individual chamber for each transistor to be measured. Isolation of individual transistors and the highly thermally conductive metal core structure prevent thermal coupling between transistors. The oven enables repeatable measurements, and thus measurements between different batches are comparable. In this research study, the properties of over 5000 transistors were measured and the variance of the aforementioned properties was analyzed.

  11. Sensitivity Study of Ice Crystal Optical Properties in the 874 GHz Submillimeter Band

    Science.gov (United States)

    Tang, Guanglin; Yang, Ping; Wu, Dong L.

    2015-01-01

    Testing of an 874 GHz submillimeter radiometer on meteorological satellites is being planned to improve ice water content retrievals. In this paper we study the optical properties of ice cloud particles in the 874 GHz band. The results show that the bulk scattering and absorption coefficients of an ensemble of ice cloud particles are sensitive to the particle shape and effective diameter, whereas the latter is also sensitive to temperature. The co-polar back scattering cross-section is not sensitive to particle shape, temperature, and the effective diameter in the range of 50200 m.

  12. cluster-in-a-box: Statistical model of sub-millimeter emission from embedded protostellar clusters

    Science.gov (United States)

    Kristensen, Lars E.; Bergin, Edwin A.

    2016-10-01

    Cluster-in-a-box provides a statistical model of sub-millimeter emission from embedded protostellar clusters and consists of three modules grouped in two scripts. The first (cluster_distribution) generates the cluster based on the number of stars, input initial mass function, spatial distribution and age distribution. The second (cluster_emission) takes an input file of observations, determines the mass-intensity correlation and generates outflow emission for all low-mass Class 0 and I sources. The output is stored as a FITS image where the flux density is determined by the desired resolution, pixel scale and cluster distance.

  13. Wavefront Sensing and Control Technology for Submillimeter and Far-Infrared Space Telescopes

    Science.gov (United States)

    Redding, Dave

    2004-01-01

    The NGST wavefront sensing and control system will be developed to TRL6 over the next few years, including testing in a cryogenic vacuum environment with traceable hardware. Doing this in the far-infrared and submillimeter is probably easier, as some aspects of the problem scale with wavelength, and the telescope is likely to have a more stable environment; however, detectors may present small complications. Since this is a new system approach, it warrants a new look. For instance, a large space telescope based on the DART membrane mirror design requires a new actuation approach. Other mirror and actuation technologies may prove useful as well.

  14. A deeply embedded young protoplanetary disk around L1489 IRS observed by the Submillimeter Array

    DEFF Research Database (Denmark)

    Brinch, C.; Crapsi, A.; Jørgensen, J. K.

    2007-01-01

    aim to identify whether an embedded Keplerian protoplanetary disk resides in the L1489 IRS system. Given the amount of envelope material still present, such a disk would respresent a very young example of a protoplanetary disk. Methods. Using the Submillimeter Array we have observed the HCO + J = 3......-2 line with a resolution of about 1". At this resolution a protoplanetary disk with a radius of a few hundred AUs should be detectable, if present. Radiative transfer tools are used to model the emission from both continuum and line data. Results. We find that these data are consistent with theoretical...

  15. Submillimeter-resolution radiography of shielded structures with laser-accelerated electron beams

    Directory of Open Access Journals (Sweden)

    Vidya Ramanathan

    2010-10-01

    Full Text Available We investigate the use of energetic electron beams for high-resolution radiography of flaws embedded in thick solid objects. A bright, monoenergetic electron beam (with energy >100  MeV was generated by the process of laser-wakefield acceleration through the interaction of 50-TW, 30-fs laser pulses with a supersonic helium jet. The high energy, low divergence, and small source size of these beams make them ideal for high-resolution radiographic studies of cracks or voids embedded in dense materials that are placed at a large distance from the source. We report radiographic imaging of steel with submillimeter resolution.

  16. Submillimeter-Resolution Radiography of Shielded Structures with Laser-Accelerated Electron Beams

    Energy Technology Data Exchange (ETDEWEB)

    Ramanathan, Vidya [University of Nebraska, Lincoln; Banerjee, Sudeep [University of Nebraska, Lincoln; Powell, Nathan [University of Nebraska, Lincoln; Cummingham, N. J. [University of Nebraska, Lincoln; Chandler-Smith, Nate [University of Nebraska, Lincoln; Zhao, Kun [University of Nebraska, Lincoln; Brown, Kevin [University of Nebraska, Lincoln; Umstadter, Donald [University of Nebraska, Lincoln; Clarke, Shaun [University of Michigan; Pozzi, Sara [University of Michigan; Beene, James R [ORNL; Vane, C Randy [ORNL; Schultz, David Robert [ORNL

    2010-10-01

    We investigate the use of energetic electron beams for high-resolution radiography of flaws embedded in thick solid objects. A bright, monoenergetic electron beam (with energy >100 MeV) was generated by the process of laser-wakefield acceleration through the interaction of 50-TW, 30-fs laser pulses with a supersonic helium jet. The high energy, low divergence, and small source size of these beams make them ideal for high-resolution radiographic studies of cracks or voids embedded in dense materials that are placed at a large distance from the source. We report radiographic imaging of steel with submillimeter resolution.

  17. Naphthalene and perylene diimides for organic transistors.

    Science.gov (United States)

    Würthner, Frank; Stolte, Matthias

    2011-05-14

    The development of ambient stable organic n-channel semiconductor molecules for thin-film transistors has experienced a tremendous impetus in the last decade to close the gap in performance in comparison to that of their p-channel counterparts. Especially naphthalene and perylene tetracarboxylic diimides (NDI and PDI) have shown to be the most valuable building blocks to achieve this challenging goal and to gain insight into the molecular structure-transistor performance relationship. Remaining challenges and new emerging research fields for these n-type semiconductors are the optimization of their deposition on flexible substrates, the control of their long term ambient stability and their implementation in complementary transistor circuits, display and sensor devices. © The Royal Society of Chemistry 2011

  18. Fundamentals of nanoscaled field effect transistors

    CERN Document Server

    Chaudhry, Amit

    2013-01-01

    Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.

  19. EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

    Science.gov (United States)

    Demming, Anna

    2012-09-01

    Today the transistor is integral to the electronic circuitry that wires our lives. When Bardeen and Brattain first observed an amplified signal by connecting electrodes to a germanium crystal they saw that their 'semiconductor triode' could prove a useful alternative to the more cumbersome vacuum tubes used at the time [1]. But it was perhaps William Schottky who recognized the extent of the transistor's potential. A basic transistor has three or more terminals and current across one pair of terminals can switch or amplify current through another pair. Bardeen, Brattain and Schottky were jointly awarded a Nobel Prize in 1956 'for their researches on semiconductors and their discovery of the transistor effect' [2]. Since then many new forms of the transistor have been developed and understanding of the underlying properties is constantly advancing. In this issue Chen and Shih and colleagues at Taiwan National University and Drexel University report a pyroelectrics transistor. They show how a novel optothermal gating mechanism can modulate the current, allowing a range of developments in nanoscale optoelectronics and wireless devices [3]. The explosion of interest in nanoscale devices in the 1990s inspired electronics researchers to look for new systems that can act as transistors, such as carbon nanotube [4] and silicon nanowire [5] transistors. Generally these transistors function by raising and lowering an energy barrier of kBT -1, but researchers in the US and Canada have demonstrated that the quantum interference between two electronic pathways through aromatic molecules can also modulate the current flow [6]. The device has advantages for further miniaturization where energy dissipation in conventional systems may eventually cause complications. Interest in transistor technology has also led to advances in fabrication techniques for achieving high production quantities, such as printing [7]. Researchers in Florida in the US demonstrated field effect transistor

  20. Lateral and Vertical Organic Transistors

    Science.gov (United States)

    Al-Shadeedi, Akram

    An extensive study has been performed to provide a better understanding of the operation principles of doped organic field-effect transistors (OFETs), organic p-i-n diodes, Schottky diodes, and organic permeable base transistors (OPBTs). This has been accomplished by a combination of electrical and structural characterization of these devices. The discussion of doped OFETs focuses on the shift of the threshold voltage due to increased doping concentrations and the generation and transport of minority charge carriers. Doping of pentacene OFETs is achieved by co-evaporation of pentacene with the n-dopant W2(hpp)4. It is found that pentacene thin film are efficiently doped and that a conductivity in the range of 2.6 x 10-6 S cm-1 for 1 wt% to 2.5 x 10-4 S cm-1 for 16 wt% is reached. It is shown that n-doped OFET consisting of an n-doped channel and n-doped contacts are ambipolar. This behavior is surprising, as n-doping the contacts should suppress direct injection of minority charge carriers (holes). It was proposed that minority charge carrier injection and hence the ambipolar characteristic of n-doped OFETs can be explained by Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. It is shown that the electric field in this layer is indeed in the range of the breakdown field of pentacene based p-i-n Zener homodiodes. Doping the channel has a profound influence on the onset voltage of minority (hole) conduction. The onset voltage can be shifted by lightly n-doping the channel. The shift of onset voltage can be explained by two mechanisms: first, due to a larger voltage that has to be applied to the gate in order to fully deplete the n-doped layer. Second, it can be attributed to an increase in hole trapping by inactive dopants. Moreover, it has been shown that the threshold voltage of majority (electron) conduction is shifted by an increase in the doping concentration, and that the ambipolar OFETs can be turned into unipolar OFETs at

  1. Switching Characteristics of Ferroelectric Transistor Inverters

    Science.gov (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  2. Static Characteristics of the Ferroelectric Transistor Inverter

    Science.gov (United States)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  3. Graphene Field Effect Transistor for Radiation Detection

    Science.gov (United States)

    Li, Mary J. (Inventor); Chen, Zhihong (Inventor)

    2016-01-01

    The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

  4. Advancement in organic nanofiber based transistors

    DEFF Research Database (Denmark)

    Jensen, Per Baunegaard With; Kjelstrup-Hansen, Jakob; Tavares, Luciana

    The focus of this project is to study the light emission from nanofiber based organic light-emitting transistors (OLETs) with the overall aim of developing efficient, nanoscale light sources with different colors integrated on-chip. The research performed here regards the fabrication and characte......The focus of this project is to study the light emission from nanofiber based organic light-emitting transistors (OLETs) with the overall aim of developing efficient, nanoscale light sources with different colors integrated on-chip. The research performed here regards the fabrication...

  5. Constructing Diodes and Transistors for Ultracold Atoms

    Science.gov (United States)

    Pepino, Ronald; Cooper, John; Anderson, Dana; Holland, Murray

    2008-05-01

    The ultracold atom-optical analogy to electronic systems is presented, along with the master equation formalism that is applied to this novel physical context of system-reservoir interactions. The proposed formalism lends itself quite readily to not only the study of atomtronic systems, but also transport properties of ultracold atoms in optical lattices. We demonstrate how these systems can be configured so that they emulate the behavior of the electronic diode, field effect transistor (FET), and bipolar junction transistor (BJT). The behavior of simple logic gates: namely, the AND and OR gates are follow as direct consequences of the atomtronic BJTs.

  6. Fundamentals of RF and microwave transistor amplifiers

    CERN Document Server

    Bahl, Inder J

    2009-01-01

    A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

  7. A system for measuring complex dielectric properties of thin films at submillimeter wavelengths using an open hemispherical cavity and a vector network analyzer

    Science.gov (United States)

    Rahman, Rezwanur; Taylor, P. C.; Scales, John A.

    2013-08-01

    Quasi-optical (QO) methods of dielectric spectroscopy are well established in the millimeter and submillimeter frequency bands. These methods exploit standing wave structure in the sample produced by a transmitted Gaussian beam to achieve accurate, low-noise measurement of the complex permittivity of the sample [e.g., J. A. Scales and M. Batzle, Appl. Phys. Lett. 88, 062906 (2006);, 10.1063/1.2172403 R. N. Clarke and C. B. Rosenberg, J. Phys. E 15, 9 (1982);, 10.1088/0022-3735/15/1/002 T. M. Hirovnen, P. Vainikainen, A. Lozowski, and A. V. Raisanen, IEEE Trans. Instrum. Meas. 45, 780 (1996)], 10.1109/19.516996. In effect the sample itself becomes a low-Q cavity. On the other hand, for optically thin samples (films of thickness much less than a wavelength) or extremely low loss samples (loss tangents below 10-5) the QO approach tends to break down due to loss of signal. In such a case it is useful to put the sample in a high-Q cavity and measure the perturbation of the cavity modes. Provided that the average mode frequency divided by the shift in mode frequency is less than the Q (quality factor) of the mode, then the perturbation should be resolvable. Cavity perturbation techniques are not new, but there are technological difficulties in working in the millimeter/submillimeter wave region. In this paper we will show applications of cavity perturbation to the dielectric characterization of semi-conductor thin films of the type used in the manufacture of photovoltaics in the 100 and 350 GHz range. We measured the complex optical constants of hot-wire chemical deposition grown 1-μm thick amorphous silicon (a-Si:H) film on borosilicate glass substrate. The real part of the refractive index and dielectric constant of the glass-substrate varies from frequency-independent to linearly frequency-dependent. We also see power-law behavior of the frequency-dependent optical conductivity from 316 GHz (9.48 cm-1) down to 104 GHz (3.12 cm-1).

  8. Studying Star and Planet Formation with the Submillimeter Probe of the Evolution of Cosmic Structure

    Science.gov (United States)

    Rinehart, Stephen A.

    2005-01-01

    The Submillimeter Probe of the Evolution of Cosmic Structure (SPECS) is a far- infrared/submillimeter (40-640 micrometers) spaceborne interferometry concept, studied through the NASA Vision Missions program. SPECS is envisioned as a 1-km baseline Michelson interferometer with two 4- meter collecting mirrors. To maximize science return, SPECS will have three operational modes: a photometric imaging mode, an intermediate spectral resolution mode (R approximately equal to 1000-3000), and a high spectral resolution mode (R approximately equal to 3 x 10(exp 5)). The first two of these modes will provide information on all sources within a 1 arcminute field-of-view (FOV), while the the third will include sources in a small (approximately equal to 5 arcsec) FOV. With this design, SPECS will have angular resolution comparable to the Hubble Space Telescope (50 mas) and sensitivity more than two orders of magnitude better than Spitzer (5sigma in 10ks of approximately equal to 3 x 10(exp 7) Jy Hz). We present here some of the results of the recently-completed Vision Mission Study for SPECS, and discuss the application of this mission to future studies of star and planet formation.

  9. Taiwanese antennas for the Sub-Millimeter Array: a progress report

    Science.gov (United States)

    Raffin, Phillippe A.; Liu, Ching-Tang; Cervera, Mathieu; Chang, Chi-Ling; Chen, Ming-Tang; Lee, Cheng-Ching; Lee, Typhoon; Lo, Kwok-Yung; Ma, Rwei-Ping; Martin, Robert N.; Martin-Cocher, Pierre; Ong, Ching-Long; Park, Yong-Sun; Tsai, Rong-Den; Wu, Enboa; Yang, Shun-Cheng; Yang, Tien-Szu

    2000-07-01

    The Academia Sinica, Institute for Astronomy and Astrophysics (ASIAA) is building two antennas to be added to the six antennas of the Sub-Millimeter Array (SMA) of the Smithsonian Astrophysical Observatory (SAO). The antennas have been designed at SAO and are currently under construction at Mauna Kea. ASIAA's two antennas are made in Taiwan from parts manufactured locally and imported from Europe and from the USA. This report will focus on the manufacturing and testing of 2 major components: the alidade and the reflector. We will emphasize the work done on the composite parts used in the 6- meter reflectors, namely the carbon fiber tubes for the backup structure, the carbon fiber legs of the quadrupod and the composite central hub. We will discuss the modal testing and pointing tests of the antennas. Finally this report will show how the Taiwanese industry was able to respond to the high manufacturing standards required to build sub-millimeter antennas. The design and manufacturing capabilities of the Aeronautical Research Laboratories and China Shipbuilding Corporation have made possible the construction of the telescopes in Taiwan.

  10. A Submillimeter Resolution PET Prototype Evaluated With an 18F Inkjet Printed Phantom

    Science.gov (United States)

    Schneider, Florian R.; Hohberg, Melanie; Mann, Alexander B.; Paul, Stephan; Ziegler, Sibylle I.

    2015-10-01

    This work presents a submillimeter resolution PET (Positron Emission Tomography) scanner prototype based on SiPM/MPPC arrays (Silicon Photomultiplier/Multi Pixel Photon Counter). Onto each active area a 1 ×1 ×20 mm3 LYSO (Lutetium-Yttrium-Oxyorthosilicate) scintillator crystal is coupled one-to-one. Two detector modules facing each other in a distance of 10.0 cm have been set up with in total 64 channels that are digitized by SADCs (Sampling Analog to Digital Converters) with 80 MHz, 10 bit resolution and FPGA (Field Programmable Gate Array) based extraction of energy and time information. Since standard phantoms are not sufficient for testing submillimeter resolution at which positron range is an issue, a 18F inkjet printed phantom has been used to explore the limit in spatial resolution. The phantom could be successfully reconstructed with an iterative MLEM (Maximum Likelihood Expectation Maximization) and an analytically calculated system matrix based on the DRF (Detector Response Function) model. The system yields a coincidence time resolution of 4.8 ns FWHM, an energy resolution of 20%-30% FWHM and a spatial resolution of 0.8 mm.

  11. Extending the LHC reach for new physics with sub-millimeter displaced vertices

    Science.gov (United States)

    Ito, Hayato; Jinnouchi, Osamu; Moroi, Takeo; Nagata, Natsumi; Otono, Hidetoshi

    2017-08-01

    Particles with a sub-millimeter decay length appear in many models of physics beyond the Standard Model. However, their longevity has been often ignored in their LHC searches and they have been regarded as promptly-decaying particles. In this letter, we show that, by requiring displaced vertices on top of the event selection criteria used in the ordinary search strategies for promptly-decaying particles, we can considerably extend the LHC reach for particles with a decay length of ≳ 100 μm. We discuss a way of reconstructing sub-millimeter displaced vertices by exploiting the same technique used for the primary vertex reconstruction on the assumption that the metastable particles are always pair-produced and their decay products contain high-pT jets. We show that, by applying a cut based on displaced vertices on top of standard kinematical cuts for the search of new particles, the LHC reach can be significantly extended if the decay length is ≳ 100 μm. In addition, we may measure the lifetime of the target particle through the reconstruction of displaced vertices, which plays an important role in understanding the new physics behind the metastable particles.

  12. The status of MUSIC: the multiwavelength sub-millimeter inductance camera

    Science.gov (United States)

    Sayers, Jack; Bockstiegel, Clint; Brugger, Spencer; Czakon, Nicole G.; Day, Peter K.; Downes, Thomas P.; Duan, Ran P.; Gao, Jiansong; Gill, Amandeep K.; Glenn, Jason; Golwala, Sunil R.; Hollister, Matthew I.; Lam, Albert; LeDuc, Henry G.; Maloney, Philip R.; Mazin, Benjamin A.; McHugh, Sean G.; Miller, David A.; Mroczkowski, Anthony K.; Noroozian, Omid; Nguyen, Hien Trong; Schlaerth, James A.; Siegel, Seth R.; Vayonakis, Anastasios; Wilson, Philip R.; Zmuidzinas, Jonas

    2014-08-01

    The Multiwavelength Sub/millimeter Inductance Camera (MUSIC) is a four-band photometric imaging camera operating from the Caltech Submillimeter Observatory (CSO). MUSIC is designed to utilize 2304 microwave kinetic inductance detectors (MKIDs), with 576 MKIDs for each observing band centered on 150, 230, 290, and 350 GHz. MUSIC's field of view (FOV) is 14' square, and the point-spread functions (PSFs) in the four observing bands have 45'', 31'', 25'', and 22'' full-widths at half maximum (FWHM). The camera was installed in April 2012 with 25% of its nominal detector count in each band, and has subsequently completed three short sets of engineering observations and one longer duration set of early science observations. Recent results from on-sky characterization of the instrument during these observing runs are presented, including achieved map- based sensitivities from deep integrations, along with results from lab-based measurements made during the same period. In addition, recent upgrades to MUSIC, which are expected to significantly improve the sensitivity of the camera, are described.

  13. Stratospheric isotopic water profiles from a single submillimeter limb scan by TELIS

    Directory of Open Access Journals (Sweden)

    A. de Lange

    2009-08-01

    Full Text Available Around 490 GHz relatively strong HDO and H218O emission lines can be found in the submillimeter thermal-emission spectrum of the Earth's atmosphere, along with lines of the principal isotopologue of water vapour. These can be used for remote sensing of the rare/principal isotope ratio in the stratosphere. A sensitivity study has been performed for retrieval simulations of water isotopologues from balloon-borne measurements by the limb sounder TELIS (TErahertz and submillimeter LImb Sounder. The study demonstrates the capability of TELIS to determine, from a single limb scan, the profiles for H218O and HDO between 20 km and 37 km with a retrieval error of ≈3 and a spatial resolution of 1.5 km, as determined by the width of the averaging kernel. In addition HDO can be retrieved in the range of 10–20 km, albeit with a strongly deteriorated retrieval error. Expected uncertainties in instrumental parameters have only limited impact on the retrieval results.

  14. Transistor-based particle detection systems and methods

    Science.gov (United States)

    Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful

    2015-06-09

    Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

  15. Design method for a digitally trimmable MOS transistor structure

    DEFF Research Database (Denmark)

    Ning, Feng; Bruun, Erik

    1996-01-01

    A digitally trimmable MOS transistor is a MOS transistor consisting of a drain, a source, and a main gate as well as several subgates. The transconductance of the transistor is tunabledigitally by means of connecting subgates either to the main gate or to the source terminal. In this paper......, a systematic design method for a digitally trimmable MOS transistor structure is proposed. Using the proposed method, we have designed a digitally trimmable MOS transistor structure and prototype devices were fabricated in a 2.4 micron n-well CMOS technology. Through measurements on these devices, the design...... method has been experimentally confirmed. The trimmable MOS transistor structure has been applied to a high precision current mirror to reduce mismatch in the current mirror. With the trimmable transistor structure, the mismatch can be reduced by more than one order of magnitude....

  16. High mobility and quantum well transistors design and TCAD simulation

    CERN Document Server

    Hellings, Geert

    2013-01-01

    For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

  17. A DETAILED GRAVITATIONAL LENS MODEL BASED ON SUBMILLIMETER ARRAY AND KECK ADAPTIVE OPTICS IMAGING OF A HERSCHEL-ATLAS SUBMILLIMETER GALAXY AT z = 4.243 {sup ,} {sup ,}

    Energy Technology Data Exchange (ETDEWEB)

    Bussmann, R. S.; Gurwell, M. A. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Fu Hai; Cooray, A. [Department of Physics and Astronomy, University of California, Irvine, CA 92697 (United States); Smith, D. J. B.; Bonfield, D.; Dunne, L. [Centre for Astrophysics, Science and Technology Research Institute, University of Hertfordshire, Hatfield, Herts AL10 9AB (United Kingdom); Dye, S.; Eales, S. [School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom); Auld, R. [Cardiff University, School of Physics and Astronomy, Queens Buildings, The Parade, Cardiff CF24 3AA (United Kingdom); Baes, M.; Fritz, J. [Sterrenkundig Observatorium, Universiteit Gent, Krijgslaan 281 S9, B-9000 Gent (Belgium); Baker, A. J. [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ 08854-8019 (United States); Cava, A. [Departamento de Astrofisica, Facultad de CC. Fisicas, Universidad Complutense de Madrid, E-28040 Madrid (Spain); Clements, D. L.; Dariush, A. [Imperial College London, Blackett Laboratory, Prince Consort Road, London SW7 2AZ (United Kingdom); Coppin, K. [Department of Physics, McGill University, Ernest Rutherford Building, 3600 Rue University, Montreal, Quebec, H3A 2T8 (Canada); Dannerbauer, H. [Universitaet Wien, Institut fuer Astronomie, Tuerkenschanzstrasse 17, 1180 Wien, Oesterreich (Austria); De Zotti, G. [Universita di Padova, Dipto di Astronomia, Vicolo dell' Osservatorio 2, IT 35122, Padova (Italy); Hopwood, R., E-mail: rbussmann@cfa.harvard.edu [Department of Physics and Astronomy, Open University, Walton Hall, Milton Keynes, MK7 6AA (United Kingdom); and others

    2012-09-10

    We present high-spatial resolution imaging obtained with the Submillimeter Array (SMA) at 880 {mu}m and the Keck adaptive optics (AO) system at the K{sub S}-band of a gravitationally lensed submillimeter galaxy (SMG) at z = 4.243 discovered in the Herschel Astrophysical Terahertz Large Area Survey. The SMA data (angular resolution Almost-Equal-To 0.''6) resolve the dust emission into multiple lensed images, while the Keck AO K{sub S}-band data (angular resolution Almost-Equal-To 0.''1) resolve the lens into a pair of galaxies separated by 0.''3. We present an optical spectrum of the foreground lens obtained with the Gemini-South telescope that provides a lens redshift of z{sub lens} = 0.595 {+-} 0.005. We develop and apply a new lens modeling technique in the visibility plane that shows that the SMG is magnified by a factor of {mu} = 4.1 {+-} 0.2 and has an intrinsic infrared (IR) luminosity of L{sub IR} = (2.1 {+-} 0.2) Multiplication-Sign 10{sup 13} L{sub Sun }. We measure a half-light radius of the background source of r{sub s} = 4.4 {+-} 0.5 kpc which implies an IR luminosity surface density of {Sigma}{sub IR} (3.4 {+-} 0.9) Multiplication-Sign 10{sup 11} L{sub Sun} kpc{sup -2}, a value that is typical of z > 2 SMGs but significantly lower than IR luminous galaxies at z {approx} 0. The two lens galaxies are compact (r{sub lens} Almost-Equal-To 0.9 kpc) early-types with Einstein radii of {theta}{sub E1} 0.57 {+-} 0.01 and {theta}{sub E2} = 0.40 {+-} 0.01 that imply masses of M{sub lens1} = (7.4 {+-} 0.5) Multiplication-Sign 10{sup 10} M{sub Sun} and M{sub lens2} = (3.7 {+-} 0.3) Multiplication-Sign 10{sup 10} M{sub Sun }. The two lensing galaxies are likely about to undergo a dissipationless merger, and the mass and size of the resultant system should be similar to other early-type galaxies at z {approx} 0.6. This work highlights the importance of high spatial resolution imaging in developing models of strongly lensed galaxies

  18. Amorphous silicon for thin-film transistors

    NARCIS (Netherlands)

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and

  19. Thermal transistor utilizing gas-liquid transition

    KAUST Repository

    Komatsu, Teruhisa S.

    2011-01-25

    We propose a simple thermal transistor, a device to control heat current. In order to effectively change the current, we utilize the gas-liquid transition of the heat-conducting medium (fluid) because the gas region can act as a good thermal insulator. The three terminals of the transistor are located at both ends and the center of the system, and are put into contact with distinct heat baths. The key idea is a special arrangement of the three terminals. The temperature at one end (the gate temperature) is used as an input signal to control the heat current between the center (source, hot) and another end (drain, cold). Simulating the nanoscale systems of this transistor, control of heat current is demonstrated. The heat current is effectively cut off when the gate temperature is cold and it flows normally when it is hot. By using an extended version of this transistor, we also simulate a primitive application for an inverter. © 2011 American Physical Society.

  20. Modelling and characterisation of transistors | Akande | Global ...

    African Journals Online (AJOL)

    Models and characterisation of active devices that control the flow of energy operating within and outside the active region of the operating domain are presented. Specifically, the incremental charge carrier and Ebers Moll models of the bipolar junction transistor are presented and the parameters of electrical behaviour of ...

  1. Black phosphorus radio-frequency transistors.

    Science.gov (United States)

    Wang, Han; Wang, Xiaomu; Xia, Fengnian; Wang, Luhao; Jiang, Hao; Xia, Qiangfei; Chin, Matthew L; Dubey, Madan; Han, Shu-jen

    2014-11-12

    Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin films offer a moderate bandgap of around 0.3 eV and high carrier mobility, which lead to transistors with decent on-off ratios and high on-state current densities. Here, we demonstrate the gigahertz frequency operation of BP field-effect transistors for the first time. The BP transistors demonstrated here show respectable current saturation with an on-off ratio that exceeds 2 × 10(3). We achieved a current density in excess of 270 mA/mm and DC transconductance above 180 mS/mm for hole conduction. Using standard high frequency characterization techniques, we measured a short-circuit current-gain cutoff frequency fT of 12 GHz and a maximum oscillation frequency fmax of 20 GHz in 300 nm channel length devices. BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus can be considered as a promising candidate for the future high performance thin film electronics technology for operation in the multi-GHz frequency range and beyond.

  2. Gallium nitride junction field-effect transistor

    Science.gov (United States)

    Zolper, John C.; Shul, Randy J.

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  3. Self-oscillating inverter with bipolar transistors

    Science.gov (United States)

    Baciu, I.; Cunţan, C. D.; Floruţa, M.

    2016-02-01

    The paper presents a self-oscillating inverter manufactured with bipolar transistors that supplies a high-amplitude alternating voltage to a fluorescent tube with a burned filament. The inverter is supplied from a low voltage accumulator that can be charged from a photovoltaic panel through a voltage regulator.

  4. New concepts for light-emitting transistors

    Science.gov (United States)

    Hepp, Aline; Ahles, Marcus; Heil, Holger; Schmechel, Roland; von Seggern, Heinz; Weiler, Ulrich; Mayer, Thomas; Jaegermann, Wolfram

    2004-10-01

    In this study we report on new concepts to generate light emission in organic thin film transistors. The initial physical understanding of light emission from tetracene based field-effect transistors was proposed to be originated from a strong underetching of the drain and source electrodes. This underetched electrodes in combination with the evaporated tetracene is thereby believed to generate a virtual OLED at the drain electrode. Accumulated holes have to leave the gate oxide interface to reach the drain electrode by crossing the bulk of the organic semiconductor. Light then occurs by injection of electrons in a large electric field in the bulk. Today's transistors do not show the underetching anymore but are still emitting light only at the drain electrode, again supporting the initial interpretation of a defect state at the edge of the drain electrode. In this context the question how electrons can overcome a potential barrier of 2.7 eV is still open. Therefore an investigation of the gold tetracene interface by UPS and XPS techniques has been started and preliminary data indicate the unexpected result that the barrier for electrons is comparable to that for holes. In a further step the generation of an ambipolar transistor by interface doping with calcium was tried and an n-type pentacene transistor could be fabricated but the strategy failed for tetracene. Finally an electrochemical interface doping was performed by the application of Lithium triflate in PEO to a thin interface layer between gate oxide and tetracene. This leads to light emission but unfortunately also to the loss of the gate voltage influence. Based on these results a possible strategy will be presented.

  5. Transistor Laser Optical NOR Gate for High Speed Optical Logic Processors

    Science.gov (United States)

    2017-03-20

    Transistor Laser Optical NOR Gate for High Speed Optical Logic Processors Milton Feng, Han Wui...Champaign Urbana, Illinois, U.S.A., 61801 (mfeng@illinois.edu) Abstract: Three-terminal transistor laser is the key element to forming a...junction transistor lasers (TJ-TLs). Keywords: Optical Logic; Semiconductor Laser; Transistor Laser (TL); Vertical Cavity Transistor Laser (VCTL

  6. Fabrication and Packaging of Discontinuous MIM (Metal-Insulator-Metal) Film Arrays for Efficient MM Wave and IR Detection and Mixing.

    Science.gov (United States)

    1987-10-01

    Technology Metil -Oxide-Metal (MOM) diodes are the fastest detector known. They are used in the frequency range from microwave to submillimeter wave and...moderate rain, smoke and dust; endoscopic laser treatment and laser surgery delivery systems, to name a few. These major areas of appli- cation

  7. A transistor based on 2D material and silicon junction

    Science.gov (United States)

    Kim, Sanghoek; Lee, Seunghyun

    2017-07-01

    A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

  8. Improvement of Subthreshold MOSFET Characteristics Employing Field Effect Bipolar Transistor

    Science.gov (United States)

    Takakubo, Kawori; Takakubo, Hajime

    A field effect transistor has the characteristic of high input resistance. Because a constant bias current is not necessary, it is widely utilized as a highly convenient element in existing integrated circuits. The exponential functional properties possessed by the bipolar transistor have the advantage of being able to realize large gain easily in comparison to the square power properties of the field effect transistor, but at present, the field effect transistor is used instead of the bipolar transistor. Amplifiers utilizing field effect transistors are inferior to those utilizing bipolar transistors from the standpoint of gain, output resistance, operational speed, etc.; consequently, in the next generation high speed communication technology, there is demand for an element that replaces the field effect transistor. This paper analyzes a subthreshold MOSFET employing Field Effect Bipolar Transistor (FEBT), which has high intrinsic gain and high input resistance, does not require a bias voltage at the signal input terminal, and can be used as a high-function field effect bipolar transistor capable of low power source voltage operations that solves the problems that have become topics in the large-scale integrated circuits of today.

  9. The SCUBA-2 Cosmology Legacy Survey: ALMA Resolves the Bright-end of the Sub-millimeter Number Counts

    NARCIS (Netherlands)

    Simpson, J. M.; Smail, Ian; Swinbank, A. M.; Chapman, S. C.; Geach, J. E.; Ivison, R. J.; Thomson, A. P.; Aretxaga, I.; Blain, A. W.; Cowley, W. I.; Chen, Chian-Chou; Coppin, K. E. K.; Dunlop, J. S.; Edge, A. C.; Farrah, D.; Ibar, E.; Karim, A.; Knudsen, K. K.; Meijerink, R.; Michałowski, M. J.; Scott, D.; Spaans, M.; van der Werf, P. P.

    We present high-resolution 870 μm Atacama Large Millimeter/sub-millimeter Array (ALMA) continuum maps of 30 bright sub-millimeter sources in the UKIDSS UDS field. These sources are selected from deep, 1 degree2 850 μm maps from the SCUBA-2 Cosmology Legacy Survey, and are representative of the

  10. The JCMT Transient Survey: Detection of Submillimeter Variability in a Class I Protostar EC 53 in Serpens Main

    Science.gov (United States)

    Yoo, Hyunju; Lee, Jeong-Eun; Mairs, Steve; Johnstone, Doug; Herczeg, Gregory J.; Kang, Sung-ju; Kang, Miju; Cho, Jungyeon; The JCMT Transient Team

    2017-11-01

    During the protostellar phase of stellar evolution, accretion onto the star is expected to be variable, but this suspected variability has been difficult to detect because protostars are deeply embedded. In this paper, we describe a submillimeter luminosity burst of the Class I protostar EC 53 in Serpens Main, the first variable found during our dedicated JCMT/SCUBA-2 monitoring program of eight nearby star-forming regions. EC 53 remained quiescent for the first six months of our survey, from 2016 February to August. The submillimeter emission began to brighten in 2016 September, reached a peak brightness of 1.5 times the faint state, and has been decaying slowly since 2017 February. The change in submillimeter brightness is interpreted as dust heating in the envelope, generated by a luminosity increase of the protostar of a factor of ≥4. The 850 μm light curve resembles the historical K-band light curve, which varies by a factor of ˜6 with a 543 period and is interpreted as accretion variability excited by interactions between the accretion disk and a close binary system. The predictable detections of accretion variability observed at both near-infrared and submillimeter wavelengths make the system a unique test-bed, enabling us to capture the moment of the accretion burst and to study the consequences of the outburst on the protostellar disk and envelope.

  11. The Integration and Applications of Organic Thin Film Transistors and Ferroelectric Polymers

    Science.gov (United States)

    Hsu, Yu-Jen

    Organic thin film transistors and ferroelectric polymer (polyvinylidene difluoride) sheet material are integrated to form various sensors for stress/strain, acoustic wave, and Infrared (heat) sensing applications. Different from silicon-based transistors, organic thin film transistors can be fabricated and processed in room-temperature and integrated with a variety of substrates. On the other hand, polyvinylidene difluoride (PVDF) exhibits ferroelectric properties that are highly useful for sensor applications. The wide frequency bandwidth (0.001 Hz to 10 GHz), vast dynamic range (100n to 10M psi), and high elastic compliance (up to 3 percent) make PVDF a more suitable candidate over ceramic piezoelectric materials for thin and flexible sensor applications. However, the low Curie temperature may have impeded its integration with silicon technology. Organic thin film transistors, however, do not have the limitation of processing temperature, hence can serve as transimpedance amplifiers to convert the charge signal generated by PVDF into current signal that are more measurable and less affected by any downstream parasitics. Piezoelectric sensors are useful for a range of applications, but passive arrays suffer from crosstalk and signal attenuation which have complicated the development of array-based PVDF sensors. We have used organic field effect transistors, which are compatible with the low Curie temperature of a flexible piezoelectric polymer,PVDF, to monolithically fabricate transimpedance amplifiers directly on the sensor surface and convert the piezoelectric charge signal into a current signal which can be detected even in the presence of parasitic capacitances. The device couples the voltage generated by the PVDF film under strain into the gate of the organic thin film transistors (OFET) using an arrangement that allows the full piezoelectric voltage to couple to the channel, while also increasing the charge retention time. A bipolar detector is created by

  12. Ultrahigh-performance (100)-oriented polycrystalline silicon thin-film transistors and their microscopic crystal structures

    Science.gov (United States)

    Thuy Nguyen, Thi; Hiraiwa, Mitsuhisa; Kuroki, Shin-Ichiro

    2017-05-01

    A multiline beam continuous-wave laser lateral crystallization (MLB-CLC) method was developed to realize a predominantly (100)-oriented polycrystalline silicon (poly-Si) film with a high biaxial tensile strain. Low-temperature poly-Si (LTPS) thin film transistors (TFTs) with an ultrahigh maximum electron field effect mobility of 1010 cm2 V-1 s-1 were realized. The correlation between the performance and microscopic crystallinity of the TFTs was investigated. The performance enhancement of TFTs brings about highly (100)-surface-oriented large Si crystallites with a high biaxial tensile strain and grain boundaries being parallel to the current flow.

  13. The Atacama Large Millimeter/submillimeter Array - from Early Science to Full Operations.

    Science.gov (United States)

    Remijan, Anthony

    2017-06-01

    The Atacama Large Millimeter/Submillimeter Array (ALMA) is now entering its 6th cycle of scientific observations. Starting with Cycle 3, science observations were no longer considered "Early Science" or "best efforts". Cycle 5 is now the third cycle of "steady state" observations and Cycle 7 is advertised to begin ALMA "full science" operations. ALMA Full Science Operations will include all the capabilities that were agreed upon by the international consortium after the ALMA re-baselining effort. In this talk, I will detail the upcoming ALMA Cycle 5 observing capabilities, describe the process of selecting new observing modes for upcoming cycles and provide an update on the status of the ALMA Full Science capabilities.

  14. Infrared and submillimeter space missions in the coming decade programmes, programmatics, and technology

    CERN Document Server

    Sauvage, Marc; Gallais, Pascal; Vigroux, Laurent

    1996-01-01

    A revolution similar to that brought by CCDs to visible astronomy is still ahead in IR and submillimeter astronomy. There is certainly no wavelength range which has, over the past several years, seen such impressive advances in technology: large-scale detector arrays, new designs for cooling in space, lightweight mirror technologies. Scientific cases for observing the cold universe are outstanding. Observations in the FIR/Submm range will provide answers to such fundamental questions as: What is the spectrum of the primordial fluctuations? How do primeval galaxies look? What are the first stages of star formation? Most of the international space missions that have been triggered by these questions are presented in detail here. Technological issues raised by these missions are reviewed, as are the most recent achievements in cooling and detector technologies.

  15. CORRELATIONS IN THE (SUB)MILLIMETER BACKGROUND FROM ACT Multiplication-Sign BLAST

    Energy Technology Data Exchange (ETDEWEB)

    Hajian, Amir; Battaglia, Nick; Bond, J. Richard [Canadian Institute for Theoretical Astrophysics, University of Toronto, Toronto, ON M5S 3H8 (Canada); Viero, Marco P.; Bock, James J. [California Institute of Technology, Pasadena, CA 91125 (United States); Addison, Graeme [Department of Astrophysics, Oxford University, Oxford, OX1 3RH (United Kingdom); Aguirre, Paula [Departamento de Astronomia y Astrofisica, Facultad de Fisica, Pontificia Universidad Catolica, Casilla 306, Santiago 22 (Chile); Appel, John William; Duenner, Rolando; Essinger-Hileman, Thomas; Fowler, Joseph W.; Hincks, Adam D. [Joseph Henry Laboratories of Physics, Jadwin Hall, Princeton University, Princeton, NJ 08544 (United States); Das, Sudeep; Dunkley, Joanna [Department of Astrophysical Sciences, Peyton Hall, Princeton University, Princeton, NJ 08544 (United States); Devlin, Mark J.; Dicker, Simon R. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104 (United States); Hughes, John P. [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854-8019 (United States); Halpern, Mark [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC V6T 1Z4 (Canada); Hasselfield, Matthew [Laboratoire APC, Universite Paris Diderot, 75205 Paris (France); Hilton, Matt [Astrophysics and Cosmology Research Unit, School of Mathematical Sciences, University of KwaZulu-Natal, Durban 4041 (South Africa); and others

    2012-01-01

    We present measurements of the auto- and cross-frequency correlation power spectra of the cosmic (sub)millimeter background at 250, 350, and 500 {mu}m (1200, 860, and 600 GHz) from observations made with the Balloon-borne Large Aperture Submillimeter Telescope (BLAST); and at 1380 and 2030 {mu}m (218 and 148 GHz) from observations made with the Atacama Cosmology Telescope (ACT). The overlapping observations cover 8.6 deg{sup 2} in an area relatively free of Galactic dust near the south ecliptic pole. The ACT bands are sensitive to radiation from the cosmic microwave background, to the Sunyaev-Zel'dovich effect from galaxy clusters, and to emission by radio and dusty star-forming galaxies (DSFGs), while the dominant contribution to the BLAST bands is from DSFGs. We confirm and extend the BLAST analysis of clustering with an independent pipeline and also detect correlations between the ACT and BLAST maps at over 25{sigma} significance, which we interpret as a detection of the DSFGs in the ACT maps. In addition to a Poisson component in the cross-frequency power spectra, we detect a clustered signal at 4{sigma}, and using a model for the DSFG evolution and number counts, we successfully fit all of our spectra with a linear clustering model and a bias that depends only on redshift and not on scale. Finally, the data are compared to, and generally agree with, phenomenological models for the DSFG population. This study demonstrates the constraining power of the cross-frequency correlation technique to constrain models for the DSFGs. Similar analyses with more data will impose tight constraints on future models.

  16. Imaging the environment of a z = 6.3 submillimeter galaxy with SCUBA-2

    Energy Technology Data Exchange (ETDEWEB)

    Robson, E. I.; Holland, W. S. [United Kingdom Astronomy Technology Centre, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Ivison, R. J. [European Space Observatory, Karl Schwarzschild Strasse 2, D-85748 Garching (Germany); Smail, Ian [Institute for Computational Cosmology, Durham University, South Road, Durham DH1 3LE (United Kingdom); Geach, J. E. [Centre for Astrophysics Research, University of Hertfordshire, Hatfield AL10 9AB (United Kingdom); Gibb, A. G. [Department of Physics and Astronomy, University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1 (Canada); Riechers, D. [Astronomy Department, Cornell University, Ithaca, NY 14853 (United States); Ade, P. A. R. [Astronomy and Instrumentation Group, Cardiff University, Cardiff, Wales CF10 3XQ (United Kingdom); Bintley, D. [Joint Astronomy Centre, 660 North Ahoku Place, University Park, Hilo, HI 96720 (United States); Bock, J. [Jet Propulsion Laboratory, National Aeronautics and Space Administration, Pasadena, CA 91109 (United States); Chapin, E. L. [XMM-Newton Science Operations Centre, European Space Astronomy Centre, Apartado 79, E-28691 Villaneueva de la Canada, Madrid (Spain); Chapman, S. C. [Department of Physics and Atmospheric Science, Dalhousie University, Coburg Road, Halifax B3H 1A6 (Canada); Clements, D. L. [Astrophysics Group, Imperial College London, Blackett Laboratory, Prince Consort Road, London SW7 2AZ (United Kingdom); Conley, A. [Center for Astrophysics and Space Astronomy, 389 UCB, University of Colorado, Boulder, CO 80309 (United States); Cooray, A. [Department of Physics and Astronomy, University of California, Irvine, CA 92697 (United States); Dunlop, J. S. [Institute for Astronomy, University of Edinburgh, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Farrah, D., E-mail: rob.ivison@gmail.com [Department of Physics, Virginia Tech, Blacksburg, VA 24061 (United States); and others

    2014-09-20

    We describe a search for submillimeter emission in the vicinity of one of the most distant, luminous galaxies known, HerMES FLS3, at z = 6.34, exploiting it as a signpost to a potentially biased region of the early universe, as might be expected in hierarchical structure formation models. Imaging to the confusion limit with the innovative, wide-field submillimeter bolometer camera, SCUBA-2, we are sensitive to colder and/or less luminous galaxies in the surroundings of HFLS3. We use the Millennium Simulation to illustrate that HFLS3 may be expected to have companions if it is as massive as claimed, but find no significant evidence from the surface density of SCUBA-2 galaxies in its vicinity, or their colors, that HFLS3 marks an overdensity of dusty, star-forming galaxies. We cannot rule out the presence of dusty neighbors with confidence, but deeper 450 μm imaging has the potential to more tightly constrain the redshifts of nearby galaxies, at least one of which likely lies at z ≳ 5. If associations with HFLS3 can be ruled out, this could be taken as evidence that HFLS3 is less biased than a simple extrapolation of the Millennium Simulation may imply. This could suggest either that it represents a rare short-lived, but highly luminous, phase in the evolution of an otherwise typical galaxy, or that this system has suffered amplification due to a foreground gravitational lens and so is not as intrinsically luminous as claimed.

  17. Diffusion in and around alginate and chitosan films with embedded sub-millimeter voids

    Energy Technology Data Exchange (ETDEWEB)

    Patra, Subhajit; Bal, Dharmendra Kumar; Ganguly, Somenath, E-mail: snganguly@che.iitkgp.ernet.in

    2016-02-01

    Hydrogel scaffolds from biopolymers have potential use in the controlled release of drugs, and as 3-D structure for the formation of tissue matrix. This article describes the solute release behavior of alginate and chitosan films with embedded voids of sub-millimeter dimensions. Nitrogen gas was bubbled in a fluidic arrangement to generate bubbles, prior to the crosslinking. The crosslinked gel was dried in a vacuum oven, and subsequently, soaked in Vitamin B-12 solution. The dimensions of the voids immediately after the cross-linking of gel, and also after complete drying were obtained using a digital microscope and scanning electron microscope respectively. The porosity of the gel was measured gravimetrically. The release of Vitamin B-12 in PBS buffer on a shaker was studied. The release experiments were repeated at an elevated temperature of 37 °C in the presence of lysozyme. The diffusion coefficient within the gel layer and the mass transfer coefficient at the interface with the bulk-liquid were estimated using a mathematical model. For comparison, the experiment was repeated with a film that does not have any embedded void. The enhancement in diffusion coefficient due to the presence of voids is discussed in this article. - Highlights: • Formation of sub-millimeter voids in biopolymer films using fluidic arrangement • The retention of self-assembled bubbles in films after crosslinking, and drying • The enhancement observed in release of model drug with introduction of voids • The diffusion coefficients in and around biopolymer films from model regression • Use of classical model in explaining release profiles from dual porosity media.

  18. An ALMA survey of submillimeter galaxies in the extended Chandra deep field south: The redshift distribution and evolution of submillimeter galaxies

    Energy Technology Data Exchange (ETDEWEB)

    Simpson, J. M.; Swinbank, A. M.; Smail, Ian; Alexander, D. M.; Danielson, A. L. R.; Thomson, A. P. [Institute for Computational Cosmology, Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Brandt, W. N. [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); Bertoldi, F.; Karim, A. [Argelander-Institute for Astronomy, Bonn University, Auf dem Hügel 71, D-53121 Bonn (Germany); De Breuck, C. [European Southern Observatory, Karl-Schwarzschild Straße, D-85748 Garching bei München (Germany); Chapman, S. C. [Department of Physics and Atmospheric Science, Dalhousie University, Halifax, NS B3H 3J5 (Canada); Coppin, K. E. K. [Centre for Astrophysics Research, Science and Technology Research Institute, University of Hertfordshire, Hatfield AL10 9AB (United Kingdom); Da Cunha, E.; Hodge, J. A.; Schinnerer, E. [Max-Planck Institute for Astronomy, Königstuhl 17, D-69117 Heidelberg (Germany); Dannerbauer, H. [Universität Wien, Institut für Astrophysik, Türkenschanzstraße 17, A-1180 Wien (Austria); Greve, T. R. [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom); Ivison, R. J. [Institute for Astronomy, University of Edinburgh, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Knudsen, K. K. [Department of Earth and Space Science, Onsala Space Observatory, Chalmers University of Technology, SE-43992 Onsala (Sweden); Poggianti, B. M., E-mail: j.m.simpson@dur.ac.uk [INAF-Astronomical Observatory of Padova, I-35122 Padova (Italy); and others

    2014-06-20

    We present the first photometric redshift distribution for a large sample of 870 μm submillimeter galaxies (SMGs) with robust identifications based on observations with ALMA. In our analysis we consider 96 SMGs in the Extended Chandra Deep Field South, 77 of which have 4-19 band photometry. We model the SEDs for these 77 SMGs, deriving a median photometric redshift of z {sub phot} = 2.3 ± 0.1. The remaining 19 SMGs have insufficient photometry to derive photometric redshifts, but a stacking analysis of Herschel observations confirms they are not spurious. Assuming that these SMGs have an absolute H-band magnitude distribution comparable to that of a complete sample of z ∼ 1-2 SMGs, we demonstrate that they lie at slightly higher redshifts, raising the median redshift for SMGs to z {sub phot} = 2.5 ± 0.2. Critically we show that the proportion of galaxies undergoing an SMG-like phase at z ≥ 3 is at most 35% ± 5% of the total population. We derive a median stellar mass of M {sub *} = (8 ± 1) × 10{sup 10} M {sub ☉}, although there are systematic uncertainties of up to 5 × for individual sources. Assuming that the star formation activity in SMGs has a timescale of ∼100 Myr, we show that their descendants at z ∼ 0 would have a space density and M{sub H} distribution that are in good agreement with those of local ellipticals. In addition, the inferred mass-weighted ages of the local ellipticals broadly agree with the look-back times of the SMG events. Taken together, these results are consistent with a simple model that identifies SMGs as events that form most of the stars seen in the majority of luminous elliptical galaxies at the present day.

  19. Organic Thin-Film Transistor (OTFT-Based Sensors

    Directory of Open Access Journals (Sweden)

    Daniel Elkington

    2014-04-01

    Full Text Available Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

  20. Cylindrical-shaped nanotube field effect transistor

    KAUST Repository

    Hussain, Muhammad Mustafa

    2015-12-29

    A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

  1. Vertically Integrated Multiple Nanowire Field Effect Transistor.

    Science.gov (United States)

    Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Park, Jun-Young; Bang, Tewook; Jeon, Seung-Bae; Hur, Jae; Lee, Dongil; Choi, Yang-Kyu

    2015-12-09

    A vertically integrated multiple channel-based field-effect transistor (FET) with the highest number of nanowires reported ever is demonstrated on a bulk silicon substrate without use of wet etching. The driving current is increased by 5-fold due to the inherent vertically stacked five-level nanowires, thus showing good feasibility of three-dimensional integration-based high performance transistor. The developed fabrication process, which is simple and reproducible, is used to create multiple stiction-free and uniformly sized nanowires with the aid of the one-route all-dry etching process (ORADEP). Furthermore, the proposed FET is revamped to create nonvolatile memory with the adoption of a charge trapping layer for enhanced practicality. Thus, this research suggests an ultimate design for the end-of-the-roadmap devices to overcome the limits of scaling.

  2. Benchmarking organic mixed conductors for transistors

    KAUST Repository

    Inal, Sahika

    2017-11-20

    Organic mixed conductors have garnered significant attention in applications from bioelectronics to energy storage/generation. Their implementation in organic transistors has led to enhanced biosensing, neuromorphic function, and specialized circuits. While a narrow class of conducting polymers continues to excel in these new applications, materials design efforts have accelerated as researchers target new functionality, processability, and improved performance/stability. Materials for organic electrochemical transistors (OECTs) require both efficient electronic transport and facile ion injection in order to sustain high capacity. In this work, we show that the product of the electronic mobility and volumetric charge storage capacity (µC*) is the materials/system figure of merit; we use this framework to benchmark and compare the steady-state OECT performance of ten previously reported materials. This product can be independently verified and decoupled to guide materials design and processing. OECTs can therefore be used as a tool for understanding and designing new organic mixed conductors.

  3. Celebrating 65th Anniversary of the Transistor

    Directory of Open Access Journals (Sweden)

    Goce L. Arsov

    2013-12-01

    Full Text Available The paper is dedicated to the 65th anniversary of the invention of the revolutionary electronic component that actually changed our way of life—the transistor. It recounts the key historical moments leading up to the invention of the first semiconductor active component in 1947. The meaning of the blend “transistor” is explained using the memorandum issued by Bell Telephone Laboratories. Certain problems appeared in the engineering phase of the transistor development and the new components obtained as a result of this research are reviewed. The impact of this invention on the development of power electronics is being emphasized. Finally, the possibility that the most important invention of the 20th century has been conceived not once but twice is discussed.

  4. Nanowire field effect transistors principles and applications

    CERN Document Server

    Jeong, Yoon-Ha

    2014-01-01

    “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

  5. Ion-selective organic electrochemical transistors.

    Science.gov (United States)

    Sessolo, Michele; Rivnay, Jonathan; Bandiello, Enrico; Malliaras, George G; Bolink, Henk J

    2014-07-23

    Ion-selective organic electrochemical transistors with sensitivity to potassium approaching 50 μA dec(-1) are demonstrated. The remarkable sensitivity arises from the use of high transconductance devices, where the conducting polymer is in direct contact with a reference gel electrolyte and integrated with an ion-selective membrane. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Monolithic watt-level millimeter-wave diode-grid frequency tripler array

    Science.gov (United States)

    Hwu, R. J.; Luhmann, N. C., Jr.; Rutledge, D. B.; Hancock, B.; Lieneweg, U.

    1988-01-01

    In order to provide watt-level CW output power throughout the millimeter and submillimeter wave region, thousands of solid-state diodes have been monolithically integrated using a metal grid to produce a highly efficient frequency multiplier. Devices considered include GaAs Schottky diodes, thin MOS diodes, and GaAs Barrier-Intrinsic-N(+)diodes. The performance of the present compact low-cost device has been theoretically and experimentally validated.

  7. Lithography-free fabrication of carbon nanotube network transistors

    Energy Technology Data Exchange (ETDEWEB)

    Timmermans, Marina Y; Nasibulin, Albert G; Kauppinen, Esko I [NanoMaterials Group, Department of Applied Physics and Center for New Materials, Aalto University School of Science and Technology, PO Box 15100, 00076 Aalto (Finland); Grigoras, Kestutis; Franssila, Sami [Microfabrication Group, Department of Materials Science and Engineering, Aalto University School of Science and Technology, PL 13000, 00076 Aalto (Finland); Hurskainen, Ville; Ermolov, Vladimir, E-mail: marina.timmermans@hut.fi, E-mail: kestas.grigoras@tkk.fi [Nokia Research Center, Itaemerenkatu 9, 00180 Helsinki (Finland)

    2011-02-11

    A novel non-lithographic technique for the fabrication of carbon nanotube thin film transistors is presented. The whole transistor fabrication process requires only one mask which is used both to pattern transistor channels based on aerosol synthesized carbon nanotubes and to deposit electrodes by metal evaporation at different angles. An important effect of electrodynamic focusing was utilized for the directed assembly of transistor channels with feature sizes smaller than the mask openings. This dry non-lithographic method opens up new avenues for device fabrication especially for low cost flexible and transparent electronics.

  8. Highly transparent and flexible nanopaper transistors.

    Science.gov (United States)

    Huang, Jia; Zhu, Hongli; Chen, Yuchen; Preston, Colin; Rohrbach, Kathleen; Cumings, John; Hu, Liangbing

    2013-03-26

    Renewable and clean "green" electronics based on paper substrates is an emerging field with intensifying research and commercial interests, as the technology combines the unique properties of flexibility, cost efficiency, recyclability, and renewability with the lightweight nature of paper. Because of its excellent optical transmittance and low surface roughness, nanopaper can host many types of electronics that are not possible on regular paper. However, there can be tremendous challenges with integrating devices on nanopaper due to its shape stability during processing. Here we demonstrate for the first time that flexible organic field-effect transistors (OFETs) with high transparency can be fabricated on tailored nanopapers. Useful electrical characteristics and an excellent mechanical flexibility were observed. It is believed that the large binding energy between polymer dielectric and cellulose nanopaper, and the effective stress release from the fibrous substrate promote these beneficial properties. Only a 10% decrease in mobility was observed when the nanopaper transistors were bent and folded. The nanopaper transistor also showed excellent optical transmittance up to 83.5%. The device configuration can transform many semiconductor materials for use in flexible green electronics.

  9. UNJUK KERJA CATU DAYA 12 VOLT 2A DENGAN PASS ELEMENT TRANSISTOR NPN DAN PNP

    OpenAIRE

    Fathoni Fathoni

    2012-01-01

    Transistor pelewat (pass element transistor) yang dipasang pada rangkain catu daya yang menggunakan IC regulator 3  terminal adalah untuk booster arus output. Ada dua cara pemasangan transistor  pelewat  yang  umum  digunakan,  yaitu  dengan  transistor  pnp  dan  npn.  Transistor  pnp dipasang dengan basis transistor yang terhubung pada input IC regulator sedangkan transistor npn dipasang dengan basis transistor yang terhubung pada output IC regulator. Untuk mengetahui unjuk kerja dari ke...

  10. Third International Kharkov Symposium "Physics and Engineering of Millimeter and Submillimeter Waves" MSMW󈨦 Symposium Proceedings, Volume 1,

    Science.gov (United States)

    1998-09-01

    conditioned by the asymmetric distribution of the small-scale roughness slopes. Its distribution function described by Gram- Charlie series in case sea...Kravchenko and A.F. Chaplin , "On the Excitation of Superconducting Impedance Plane", DAN SSSR, Vol. 326, No.2, pp.272-275, 1992. 16. V.F...Kravchenko and A.F. Chaplin , "Excitation of Superconducting Circular and Elliptic Cylinder", DAN SSSR, Vol. 326, No.4, pp.633-636, 1992. 17. V.F. Kravchenko

  11. Electromagnetic Waves

    DEFF Research Database (Denmark)

    This book is dedicated to various aspects of electromagnetic wave theory and its applications in science and technology. The covered topics include the fundamental physics of electromagnetic waves, theory of electromagnetic wave propagation and scattering, methods of computational analysis...

  12. Spin-wave propagation in the presence of inhomogeneous Dzyaloshinskii-Moriya interactions

    Science.gov (United States)

    Lee, Seung-Jae; Moon, Jung-Hwan; Lee, Hyun-Woo; Lee, Kyung-Jin

    2017-11-01

    We theoretically investigate spin-wave propagation through a magnetic metamaterial with spatially modulated Dzyaloshinskii-Moriya interaction. We establish an effective Schrödinger equation for spin waves and derive boundary conditions for spin waves passing through the boundary between two regions having different Dzyaloshinskii-Moriya interactions. Based on these boundary conditions, we find that the spin wave can be amplified at the boundary and the spin-wave band gap is tunable either by an external magnetic field or the strength of Dzyaloshinskii-Moriya interaction, which offers a spin-wave analog of the field-effect transistor in traditional electronics.

  13. Dual Waves

    OpenAIRE

    Kallosh, Renata

    1994-01-01

    We study the gravitational waves in the 10-dimensional target space of the superstring theory. Some of these waves have unbroken supersymmetries. They consist of Brinkmann metric and of a 2-form field. Sigma-model duality is applied to such waves. The corresponding solutions we call dual partners of gravitational waves, or dual waves. Some of these dual waves upon Kaluza-Klein dimensional reduction to 4 dimensions become equivalent to the conformo-stationary solutions of axion-dilaton gravity...

  14. Magnon transistor for all-magnon data processing

    Science.gov (United States)

    Chumak, Andrii V.; Serga, Alexander A.; Hillebrands, Burkard

    2014-01-01

    An attractive direction in next-generation information processing is the development of systems employing particles or quasiparticles other than electrons—ideally with low dissipation—as information carriers. One such candidate is the magnon: the quasiparticle associated with the eigen-excitations of magnetic materials known as spin waves. The realization of single-chip all-magnon information systems demands the development of circuits in which magnon currents can be manipulated by magnons themselves. Using a magnonic crystal—an artificial magnetic material—to enhance nonlinear magnon–magnon interactions, we have succeeded in the realization of magnon-by-magnon control, and the development of a magnon transistor. We present a proof of concept three-terminal device fabricated from an electrically insulating magnetic material. We demonstrate that the density of magnons flowing from the transistor’s source to its drain can be decreased three orders of magnitude by the injection of magnons into the transistor’s gate. PMID:25144479

  15. Submillimeter residual losses in high-Tc superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Miller, David [Univ. of California, Berkeley, CA (United States)

    1993-09-01

    Bolometry was used obtain accurate submillimeter residual loss data for epitaxial films of YBa2Cu3O7 (YBCO), Tl2Ca2Ba2Cu3O10, Tl2CaBa2Cu2O8 (TCBCO), and Ba0.6K0.4BiO3 (BKBO). We were able to fit the absorptivity measured for Nb films to an Eliashberg strong coupling calculation; excellent agreement resulted between parameters from best fits and measured Residual Resistivity Ratio. Microwave surface resistance measurements made on the same YBCO and TCBCO films are in excellent agreement with submillimeter measurements. Absorptivities for all YBCO films studied are qualitatively similar, increasing smoothly with frequency, with no gap-like features below the well known absorption edge at 450 cm-1. Losses in YBCO films were fit to a weakly coupled grain model for the a-b plane conductivity. Strong phonon structure was observed in TCBCO films between 60 and 700 cm-1 (2 THz and 23 THz); these losses could not be fitted to the simple weakly coupled grain model, in contrast to the case for other high-Tc superconductors where phonon structure observed in ceramics are is absent in epitaxial oriented films and crystals because of electronic screening due to high conductivity of a-b planes. Absorptivity data for the BKBO films all show a strong absorption onset near the BCS tunneling gap of 3.5 kBTc. Comparison with strong coupling Eliashberg predictions and of a Kramers-Kronig analysis indicate that the absorption onset is consistent with a superconducting energy gap. Effects of magnetic field on residual losses in YBCO films show a resonant absorption feature in vicinity of predicted

  16. Ambipolar MoS2 Thin Flake Transistors

    NARCIS (Netherlands)

    Zhang, Yijin; Ye, Jianting; Matsuhashi, Yusuke; Iwasa, Yoshihiro

    Field effect transistors (FETs) made of thin flake single crystals isolated from layered materials have attracted growing interest since the success of graphene. Here, we report the fabrication of an electric double layer transistor (EDLT, a FET gated by ionic liquids) using a thin flake of MoS2, a

  17. Very High Frequency Two-Port Characterization of Transistors

    DEFF Research Database (Denmark)

    Hertel, Jens Christian; Nour, Yasser; Jørgensen, Ivan Harald Holger

    To properly use transistors in VHF converters, they need to be characterized under similar conditions. This research presents a two-port method, using a network analyzer (NWA) with a S-port setup. The method is a one-shot method, providing fast results of the off-state parasitics of the transistors....

  18. Advanced Organic Permeable-Base Transistor with Superior Performance.

    Science.gov (United States)

    Klinger, Markus P; Fischer, Axel; Kaschura, Felix; Scholz, Reinhard; Lüssem, Björn; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Kasemann, Daniel; Leo, Karl

    2015-12-16

    An optimized vertical organic permeable-base transistor (OPBT) competing with the best organic field-effect transistors in performance, while employing low-cost fabrication techniques, is presented. The OPBT stands out by its excellent power efficiency at the highest frequencies. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. The Smallest Transistor-Based Nonautonomous Chaotic Circuit

    DEFF Research Database (Denmark)

    Lindberg, Erik; Murali, K.; Tamasevicius, Arunas

    2005-01-01

    A nonautonomous chaotic circuit based on one transistor, two capacitors, and two resistors is described. The mechanism behind the chaotic performance is based on “disturbance of integration.” The forward part and the reverse part of the bipolar transistor are “fighting” about the charging...

  20. On the 50th Anniversary of the Transistor

    DEFF Research Database (Denmark)

    Stassen, Flemming

    1997-01-01

    This paper celebrates the 50th anniversary of the invention of the bipolar transistor in 1947. Combined with the inventions of integration and planar technology, the invention of the transistor marks the beginning of a period of unprecedented growth, the industrialization of electronics....

  1. The Complete Semiconductor Transistor and Its Incomplete Forms

    Science.gov (United States)

    Binbin, Jie; Chih-Tang, Sah

    2009-06-01

    This paper describes the definition of the complete transistor. For semiconductor devices, the complete transistor is always bipolar, namely, its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions. Partially complete or incomplete transistors, via coined names or/and designed physical geometries, included the 1949 Shockley p/n junction transistor (later called Bipolar Junction Transistor, BJT), the 1952 Shockley unipolar 'field-effect' transistor (FET, later called the p/n Junction Gate FET or JGFET), as well as the field-effect transistors introduced by later investigators. Similarities between the surface-channel MOS-gate FET (MOSFET) and the volume-channel BJT are illustrated. The bipolar currents, identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base, led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices, and also the importance of the terminal contacts.

  2. Outlook and Emerging Semiconducting Materials for Ambipolar Transistors

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great

  3. Comparing Submillimeter Polarized Emission with Near-infrared Polarization of Background Stars for the Vela C Molecular Cloud

    Science.gov (United States)

    Santos, Fabio P.; Ade, Peter A. R.; Angilè, Francesco E.; Ashton, Peter; Benton, Steven J.; Devlin, Mark J.; Dober, Bradley; Fissel, Laura M.; Fukui, Yasuo; Galitzki, Nicholas; Gandilo, Natalie N.; Klein, Jeffrey; Korotkov, Andrei L.; Li, Zhi-Yun; Martin, Peter G.; Matthews, Tristan G.; Moncelsi, Lorenzo; Nakamura, Fumitaka; Netterfield, Calvin B.; Novak, Giles; Pascale, Enzo; Poidevin, Frédérick; Savini, Giorgio; Scott, Douglas; Shariff, Jamil A.; Diego Soler, Juan; Thomas, Nicholas E.; Tucker, Carole E.; Tucker, Gregory S.; Ward-Thompson, Derek

    2017-03-01

    We present a large-scale combination of near-infrared (near-IR) interstellar polarization data from background starlight with polarized emission data at submillimeter wavelengths for the Vela C molecular cloud. The near-IR data consist of more than 6700 detections probing a range of visual extinctions between 2 and 20 {mag} in and around the cloud. The submillimeter data were collected in Antarctica by the Balloon-borne Large Aperture Submillimeter Telescope for Polarimetry. This is the first direct combination of near-IR and submillimeter polarization data for a molecular cloud aimed at measuring the “polarization efficiency ratio” ({R}{eff}), a quantity that is expected to depend only on grain-intrinsic physical properties. It is defined as {p}500/({p}I/{τ }V), where p 500 and p I are polarization fractions at 500 μ {{m}} and the I band, respectively, and {τ }V is the optical depth. To ensure that the same column density of material is producing both polarization from emission and from extinction, we conducted a careful selection of near-background stars using 2MASS, Herschel, and Planck data. This selection excludes objects contaminated by the Galactic diffuse background material as well as objects located in the foreground. Accounting for statistical and systematic uncertainties, we estimate an average {R}{eff} value of 2.4 ± 0.8, which can be used to test the predictions of dust grain models designed for molecular clouds when such predictions become available. The ratio {R}{eff} appears to be relatively flat as a function of the cloud depth for the range of visual extinctions probed.

  4. A Submillimeter Perspective on the Goods Fields. II. The High Radio Power Population in the Goods-N

    Science.gov (United States)

    Barger, A. J.; Cowie, L. L.; Owen, F. N.; Hsu, L.-Y.; Wang, W.-H.

    2017-01-01

    We use ultradeep 20 cm data from the Karl G. Jansky Very Large Array and 850 μm data from SCUBA-2 and the Submillimeter Array of an 124 arcmin2 region of the Chandra Deep Field-north to analyze the high radio power ({P}20{cm}> {10}31 erg s-1 Hz-1) population. We find that 20 (42 ± 9%) of the spectroscopically identified z> 0.8 sources have consistent star formation rates (SFRs) inferred from both submillimeter and radio observations, while the remaining sources have lower (mostly undetected) submillimeter fluxes, suggesting that active galactic nucleus (AGN) activity dominates the radio power in these sources. We develop a classification scheme based on the ratio of submillimeter flux to radio power versus radio power and find that it agrees with AGN and star-forming galaxy classifications from Very Long Baseline Interferometry. Our results provide support for an extremely rapid drop in the number of high SFR galaxies above about a thousand solar masses per year (Kroupa initial mass function) and for the locally determined relation between X-ray luminosity and radio power for star-forming galaxies applying at high redshifts and high radio powers. We measure far-infrared (FIR) luminosities and find that some AGNs lie on the FIR-radio correlation, while others scatter below. The AGNs that lie on the correlation appear to do so based on their emission from the AGN torus. We measure a median radio size of 1.″0 ± 0.3 for the star-forming galaxies. The radio sizes of the star-forming galaxies are generally larger than those of the AGNs. The W. M. Keck Observatory is operated as a scientific partnership among the California Institute of Technology, the University of California, and NASA, and was made possible by the generous financial support of the W. M. Keck Foundation.

  5. Observing the Sun with the Atacama Large Millimeter/submillimeter Array (ALMA): High-Resolution Interferometric Imaging

    Science.gov (United States)

    Shimojo, M.; Bastian, T. S.; Hales, A. S.; White, S. M.; Iwai, K.; Hills, R. E.; Hirota, A.; Phillips, N. M.; Sawada, T.; Yagoubov, P.; Siringo, G.; Asayama, S.; Sugimoto, M.; Brajša, R.; Skokić, I.; Bárta, M.; Kim, S.; de Gregorio-Monsalvo, I.; Corder, S. A.; Hudson, H. S.; Wedemeyer, S.; Gary, D. E.; De Pontieu, B.; Loukitcheva, M.; Fleishman, G. D.; Chen, B.; Kobelski, A.; Yan, Y.

    2017-07-01

    Observations of the Sun at millimeter and submillimeter wavelengths offer a unique probe into the structure, dynamics, and heating of the chromosphere; the structure of sunspots; the formation and eruption of prominences and filaments; and energetic phenomena such as jets and flares. High-resolution observations of the Sun at millimeter and submillimeter wavelengths are challenging due to the intense, extended, low-contrast, and dynamic nature of emission from the quiet Sun, and the extremely intense and variable nature of emissions associated with energetic phenomena. The Atacama Large Millimeter/submillimeter Array (ALMA) was designed with solar observations in mind. The requirements for solar observations are significantly different from observations of sidereal sources and special measures are necessary to successfully carry out this type of observations. We describe the commissioning efforts that enable the use of two frequency bands, the 3-mm band (Band 3) and the 1.25-mm band (Band 6), for continuum interferometric-imaging observations of the Sun with ALMA. Examples of high-resolution synthesized images obtained using the newly commissioned modes during the solar-commissioning campaign held in December 2015 are presented. Although only 30 of the eventual 66 ALMA antennas were used for the campaign, the solar images synthesized from the ALMA commissioning data reveal new features of the solar atmosphere that demonstrate the potential power of ALMA solar observations. The ongoing expansion of ALMA and solar-commissioning efforts will continue to enable new and unique solar observing capabilities.

  6. The Hawaii SCUBA-2 Lensing Cluster Survey: Radio-detected Submillimeter Galaxies in the HST Frontier Fields

    Science.gov (United States)

    Hsu, Li-Yen; Desai, Vandana; Murphy, Eric J.; Cowie, Lennox L.; Heywood, Ian; Momjian, Emmanuel; Barger, Amy J.; Smail, Ian

    2017-05-01

    In this second paper of the Hawaii SCUBA-2 Lensing Cluster Survey series, we cross-match SCUBA-2 maps with 3 and 6 GHz images from the Janksy-VLA Frontier Fields Legacy Survey for three cluster fields, MACS J0416.1-2403, MACS J0717.5+3745, and MACS J1149.5+2223. Within the HST coverage, 14 out of 44 850 μm sources have 3 GHz counterparts, five of which are also detected at 6 GHz. The 850 μm flux densities of these detected sources span from 0.7 to 4.4 mJy after correcting for lensing amplification. The median redshift of the sample is z={1.28}-0.09+0.07, much lower than the typical redshifts (z = 2-3) of brighter submillimeter galaxies (SMGs) in the literature. In addition, we find that our sources have lower dust temperatures than those of the brighter SMGs. This is also confirmed by an analysis of the ratio between infrared star-formation rate and 850 μm flux density. However, these 14 sources may not represent the general submillimeter population at the same flux range, given that the SCUBA-2 sources without radio counterparts are likely at higher redshifts. Detection of these sources would require deeper radio images or submillimeter interferometry.

  7. A review of InP/InAlAs/InGaAs based transistors for high frequency applications

    Science.gov (United States)

    Ajayan, J.; Nirmal, D.

    2015-10-01

    This paper presents an overview of the rapid progress being made in the development of InP based devices for high speed applications. Over the past few decades, major aero space industries have been developing InP based hetero structure devices like hetero junction bipolar transistors (HBTs) and high electron mobility transistors (HEMT) because of their low DC power due to excellent low voltage operation and milli-meter wave frequency performance even though its widespread use has been limited by high cost. InP based HBTs, MOSFETs and HEMTs have also been developed by commercial companies for applications in high speed fiber optic communications because InP based device technologies takes advantage of the intrinsic material properties such as high thermal conductivity, high electron mobility and low energy band gap for low voltage operation compared to silicon, silicon-germenium, and GaAs based semiconductor devices.

  8. Hafnium transistor process design for neural interfacing.

    Science.gov (United States)

    Parent, David W; Basham, Eric J

    2009-01-01

    A design methodology is presented that uses 1-D process simulations of Metal Insulator Semiconductor (MIS) structures to design the threshold voltage of hafnium oxide based transistors used for neural recording. The methodology is comprised of 1-D analytical equations for threshold voltage specification, and doping profiles, and 1-D MIS Technical Computer Aided Design (TCAD) to design a process to implement a specific threshold voltage, which minimized simulation time. The process was then verified with a 2-D process/electrical TCAD simulation. Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design.

  9. Amplificadores con transistores. Estudio y dimensionado

    OpenAIRE

    Lubiano García, Adrián

    2017-01-01

    Este trabajo es un estudio de las distintas configuraciones de los amplificadores con transistores vistos en la asignatura de Electrónica Analógica del tercer curso del Grado en Ingeniería en Electrónica Industrial y Automática de la Escuela de Ingenierías Industriales de la Universidad de Valladolid. En este trabajo se mostrarán los pasos seguidos en la creación de una aplicación con Visual Basic para la realización de los ejercicios de las distintas configuraciones, así...

  10. Oxide Based Transistor for Flexible Displays

    Science.gov (United States)

    2014-09-15

    Transistors Achieved by 63-mV/dec Subthreshold Slope, IEDM 2008 IEEE International, P. 1-4. 23. Cho, E.N., Jung Han Kang, Chang Eun Kim, Pyung Moon...illumination, Applied Physics Letters, 2012. 100(24): p. 243505 17. Ji -Hoon Shin, D.-K.C., Effect of oxygen on the optical and the electrical properties...Advanced Functional Materials, 2012. 22(6): p. 1209-1214. 21. Ji -Hoon Shin and Duck-Kyun Choi, Effect of Oxygen on the Optical and the Electrical

  11. Ultrathin organic transistors on oxide surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Daraktchiev, Maren [Swiss Federal Institute of Technology, CH-1015 Lausanne (Switzerland); Muehlenen, Adrian von [Swiss Federal Institute of Technology, CH-1015 Lausanne (Switzerland); Nueesch, Frank [Swiss Federal Institute of Technology, CH-1015 Lausanne (Switzerland); Schaer, Michel [Swiss Federal Institute of Technology, CH-1015 Lausanne (Switzerland); Brinkmann, Martin [Institut Charles Sadron, 67083 Strasbourg Cedex (France); Bussac, Marie-Noelle [Centre de Physique Theorique, Ecole Polytechnique, 91128 Palaiseau Cedex (France); Zuppiroli, Libero [Swiss Federal Institute of Technology, CH-1015 Lausanne (Switzerland)

    2005-05-01

    We have built a model organic field-effect transistor that is basically composed of a single layer of pentacene crystal in interaction with an oxide surface. Drain and source contacts are ohmic so that the pentacene layer can carry a current density as high as 3000 A cm{sup -2} at a gate voltage of -60 V. Four-probe and two-probe transport measurements as a function of temperature and fields are presented in relation with structural near-field observations. The experimental results suggest a simple two-dimensional model where the equilibrium between free and trapped carriers at the oxide interface determines the OFET characteristics and performance.

  12. Advanced Channel Engineering for Thin Body Transistors

    OpenAIRE

    Chien, Po-Yen

    2016-01-01

    As transistor dimension kept scaling down, many challenges arises such as worse electrostatic control and higher variability. In order to address these issues, thin down body thickness is widely accepted and device structures such as FinFET and SOI are employed. Although FinFET has been adopted as main device structure by major foundries like Intel and TSMC in 20nm node and beyond, its analog performances like gm and fT are still lagging behind the bulk and SOI and prevent it from applying to...

  13. Functional organic field-effect transistors.

    Science.gov (United States)

    Guo, Yunlong; Yu, Gui; Liu, Yunqi

    2010-10-25

    Functional organic field-effect transistors (OFETs) have attracted increasing attention in the past few years due to their wide variety of potential applications. Research on functional OFETs underpins future advances in organic electronics. In this review, different types of functional OFETs including organic phototransistors, organic memory FETs, organic light emitting FETs, sensors based on OFETs and other functional OFETs are introduced. In order to provide a comprehensive overview of this field, the history, current status of research, main challenges and prospects for functional OFETs are all discussed.

  14. Micro-Spec: An Ultracompact, High-sensitivity Spectrometer for Far-Infrared and Submillimeter Astronomy

    Science.gov (United States)

    Cataldo, Giuseppe; Hsieh, Wen-Ting; Huang, Wei-Chung; Moseley, S. Harvey; Stevenson, Thomas R.; Wollack, Edward J.

    2014-01-01

    High-performance, integrated spectrometers operating in the far-infrared and submillimeter ranges promise to be powerful tools for the exploration of the epochs of reionization and initial galaxy formation. These devices, using high-efficiency superconducting transmission lines, can achieve the performance of a meter-scale grating spectrometer in an instrument implemented on a 4 inch silicon wafer. Such a device, when combined with a cryogenic telescope in space, provides an enabling capability for studies of the early universe. Here, the optical design process for Micro-Spec (micron-Spec) is presented, with particular attention given to its two-dimensional diffractive region, where the light of different wavelengths is focused on the different detectors. The method is based on the stigmatization and minimization of the light path function in this bounded region, which results in an optimized geometrical configuration. A point design with an efficiency of (is) approximately 90% has been developed for initial demonstration and can serve as the basis for future instruments. Design variations on this implementation are also discussed, which can lead to lower efficiencies due to diffractive losses in the multimode region.

  15. Velocity-resolved Hot Water Emission Detected toward HL Tau with the Submillimeter Array

    Science.gov (United States)

    Kristensen, Lars E.; Brown, Joanna M.; Wilner, David; Salyk, Colette

    2016-05-01

    Using the Submillimeter Array (SMA) on Mauna Kea, the {{{H}}}216{{O}} {10}{2,9}-9{}{3,6} transition ({E}{{up}} = 1863 K) at 321.2 GHz has been detected toward the embedded low-mass protostar HL Tau. The line centroid is blueshifted by 20 km s-1 with respect to the source velocity, and it has a FWHM of 25 km s-1. The emission is tentatively resolved and extends ˜3″-4″ over the sky (˜2 beams), or ˜500 au at the distance of Taurus. The velocity offset, and to a lesser degree the spatial extent of the emission, show that the line originates in the protostellar jet or wind. This result suggests that at least some water emission observed with Herschel and Spitzer toward embedded sources, and perhaps also disk sources, contains a wind or jet component, which is crucial for interpreting these data. These pathfinder observations done with the SMA open a new window into studying the origin of water emission with e.g., ALMA, thus providing new insights into where water is in protostellar systems.

  16. Controlled production of sub-millimeter liquid core hydrogel capsules for parallelized 3D cell culture.

    Science.gov (United States)

    Doméjean, Hugo; de la Motte Saint Pierre, Mathieu; Funfak, Anette; Atrux-Tallau, Nicolas; Alessandri, Kevin; Nassoy, Pierre; Bibette, Jérôme; Bremond, Nicolas

    2016-12-20

    Liquid core capsules having a hydrogel membrane are becoming a versatile tool for three-dimensional culture of micro-organisms and mammalian cells. Making sub-millimeter capsules at a high rate, via the breakup of a compound jet in air, opens the way to high-throughput screening applications. However, control of the capsule size monodispersity, especially required for quantitative bioassays, was still lacking. Here, we report how the understanding of the underlying hydrodynamic instabilities that occur during the process can lead to calibrated core-shell bioreactors. The requirements are: i) damping the shear layer instability that develops inside the injector arising from the co-annular flow configuration of liquid phases having contrasting viscoelastic properties; ii) controlling the capillary instability of the compound jet by superposing a harmonic perturbation onto the shell flow; iii) avoiding coalescence of drops during jet fragmentation as well as during drop flight towards the gelling bath; iv) ensuring proper engulfment of the compound drops into the gelling bath for building a closed hydrogel shell. We end up with the creation of numerous identical compartments in which cells are able to form multicellular aggregates, namely spheroids. In addition, we implement an intermediate composite hydrogel layer, composed of alginate and collagen, allowing cell adhesion and thus the formation of epithelia or monolayers of cells.

  17. Simultaneous retrievals of temperature and volume mixing ratio constituents from nonoxygen odin submillimeter radiometer bands.

    Science.gov (United States)

    Baron, P; Merino, F; Murtagh, D

    2001-11-20

    We present the retrieval of temperature and O(3) volume mixing ratio profiles in the middle atmosphere from a single strong O(3) line. We performed the study using simulated limb-sounding measurements in the frame of the submillimeter radiometer (SMR) instrument that will be carried by the Odin satellite that is due to be launched in early 2001. This study is interesting for the Odin SMR data analysis because we first provide additional temperature measurements, and second reduce significantly the O(3) retrieval error that is due to the temperature and pressure uncertainties. Nonlinear retrievals are performed to retrieve the O(3), CO, H(2)O, and temperature profiles simultaneously from the spectral band 576.27-576.67 GHz. The pressure profile is deduced from the hydrostatic equilibrium equation after each iteration. Temperature and O(3) can be retrieved throughout the stratosphere from 15-50 and 20-50 km, respectively, with a vertical resolution of 3 km. The altitude domain corresponds to the parts of the atmosphere where the signal intensity saturates in some spectrometer channels. A total error of 4-6 K has been found in the temperature profile, mainly because of the instrumental thermal noise and to a lesser extent the calibration. The total error in the O(3) profile is 5-10% and is dominated by the O(3) line-broadening parameter. The total error on the retrieved pressure profile is 2-10% because of the errors in calibration and reference pressure.

  18. Laboratory and observational studies of transient molecules at microwave and millimeter/submillimeter wavelengths

    Science.gov (United States)

    Zack, Lindsay Nicole

    In this dissertation, techniques of high-resolution rotational spectroscopy have been used to measure the spectra of molecules in both laboratory and astronomical settings. In the laboratory, small metal-bearing molecules containing zinc, iron, nickel, titanium, yttrium, and scandium have been studied at microwave and millimeter/submillimeter wavelengths in order to determine their rotational, fine, and hyperfine constants. These molecules were synthesized in situ in direct-absorption and Fourier-transform microwave spectrometers using Broida-type ovens and laser ablation methods. From the spectroscopic parameters, information about fundamental physical properties and electronic character could be obtained. Radio telescopes were used to measure the spectra of molecules in different interstellar environments. A new molecule, FeCN, was detected toward the circumstellar envelope of the carbon-rich asymtotic giant branch star, IRC+10216, marking the first iron-bearing molecule detected in the interstellar medium. The telescopes were also used to conduct a study of the evolved planetary nebula, NGC 7293, or the Helix Nebula. In the Helix, CO, HCO+, and H2CO were observed at several positions offset from the central star to obtain densities and kinetic temperatures throughout the Helix. A map of the HCO+ J = 1→ 0 transition was also constructed, showing that HCO+ is widespread throughout the Helix, instead of being photodissociated and destroyed, as theoretical models of planetary nebulae predict.

  19. Submillimeter Measurements of Photolysis Products in Interstellar Ice Analogs: A New Experimental Technique

    Science.gov (United States)

    Milam, Stefanie N.; Weaver, Susanna Widicus

    2012-01-01

    Over 150 molecular species have been confirmed in space, primarily by their rotational spectra at millimeter/submillimeter wavelengths, which yield an unambiguous identification. Many of the known interstellar organic molecules cannot be explained by gas-phase chemistry. It is now presumed that they are produced by surface reactions of the simple ices and/or grains observed and released into the gas phase by sublimation, sputtering, etc. Additionally, the chemical complexity found in meteorites and samples returned from comets far surpasses that of the remote detections for the interstellar medium (ISM), comets, and planetary atmospheres. Laboratory simulations of interstellar/cometary ices have found, from the analysis of the remnant residue of the warmed laboratory sample, that such molecules are readily formed; however, it has yet to be determined if they are formed during the warm phase or within the ice during processing. Most analysis of the ice during processing reveals molecular changes, though the exact quantities and species formed are highly uncertain with current techniques due to overwhelming features of simple ices. Remote sensing with high resolution spectroscopy is currently the only method to detect trace species in the ISM and the primary method for comets and icy bodies in the Solar System due to limitations of sample return. We have recently designed an experiment to simulate interstellar/cometary/planetary ices and detect trace species employing the same techniques used for remote observations. Preliminary results will be presented.

  20. Probing Galaxy Formation and Evolution with Space Born Sub-Millimeter Telescopes

    Science.gov (United States)

    Dwek, Eli; Arendt, Richard G.; Moseley, Harvey; Benford, Dominic; Shafer, Richard; Mather, John; Oegerle, William (Technical Monitor)

    2002-01-01

    A major unresolved question in cosmology is how the complex system of galaxies we see in the present universe evolved from an almost perfectly smooth beginning. Multiwavelength observations of galaxies have revealed that a significant fraction of their UV-visible starlight is absorbed and reradiated by dust at infrared JR) and submillimeter wavelengths. The cumulative IR-submm. emission from galaxies since the epoch of recombination, the cosmic IR background, has recently been recorded by the COBE satellite. The COBE observations in combination with recent submm surveys conducted with the SCUBA on the 15 m JCMT have shown that most of the radiation from star formation that has taken place in the early stages of galaxy evolution is reradiated by dust at submm wavelengths. Therefore, submm telescopes offer a unique probe of the early stages of galaxy formation and evolution. This talk will: (1) consider the impact of telescope diameter on the depth of the survey (what redshift can be probed) at different wavelengths; (2) discuss the relative scientific merits of high-resolution narrow-field surveys versus lower resolution deep surveys; and (3) show how both strategies offer complementary information crucial to our understanding of the structure and evolution of galaxies in the universe.

  1. Optical fiber sensors-based temperature distribution measurement in ex vivo radiofrequency ablation with submillimeter resolution

    Science.gov (United States)

    Macchi, Edoardo Gino; Tosi, Daniele; Braschi, Giovanni; Gallati, Mario; Cigada, Alfredo; Busca, Giorgio; Lewis, Elfed

    2014-11-01

    Radiofrequency thermal ablation (RFTA) induces a high-temperature field in a biological tissue having steep spatial (up to 6°C/mm) and temporal (up to 1°C/s) gradients. Applied in cancer care, RFTA produces a localized heating, cytotoxic for tumor cells, and is able to treat tumors with sizes up to 3 to 5 cm in diameter. The online measurement of temperature distribution at the RFTA point of care has been previously carried out with miniature thermocouples and optical fiber sensors, which exhibit problems of size, alteration of RFTA pattern, hysteresis, and sensor density worse than 1 sensor/cm. In this work, we apply a distributed temperature sensor (DTS) with a submillimeter spatial resolution for the monitoring of RFTA in porcine liver tissue. The DTS demodulates the chaotic Rayleigh backscattering pattern with an interferometric setup to obtain the real-time temperature distribution. A measurement chamber has been set up with the fiber crossing the tissue along different diameters. Several experiments have been carried out measuring the space-time evolution of temperature during RFTA. The present work showcases the temperature monitoring in RFTA with an unprecedented spatial resolution and is exportable to in vivo measurement; the acquired data can be particularly useful for the validation of RFTA computational models.

  2. The SOFIA/SAFIRE Far-Infrared Spectrometer: Highlighting Submillimeter Astrophysics and Technology

    Science.gov (United States)

    Benford, Dominic J.

    2009-01-01

    The Submillimeter and Far-InfraRed Experiment (SAFIRE) on the SOFIA airborne observatory is an imaging spectrometer for wavelengths between 28 microns and 440 microns. Our design is a dual-band long-slit grating spectrometer, which provides broadband (approx. 4000 km/s) observations in two lines simultaneously over a field of view roughly 10" wide by 320" long. The low backgrounds in spectroscopy require very sensitive detectors with noise equivalent powers of order 10(exp -18) W/square root of Hz. We are developing a kilopixel, filled detector array for SAFIRE in a 32 x 40 format. The detector consists of a transition edge sensor (TES) bolometer array, a per-pixel broadband absorbing backshort array, and a NIST SQUID multiplexer readout array. This general type of array has been used successfully in the GISMO instrument, so we extrapolate to the sensitivity needed for airborne spectroscopy. Much of the cryogenic, electronics, and software infrastructure for SAFIRE have been developed. I provide here an overview of the progress on SAFIRE.

  3. A New Era of Submillimeter GRB Afterglow Follow-Ups with the Greenland Telescope

    Directory of Open Access Journals (Sweden)

    Yuji Urata

    2015-01-01

    Full Text Available Planned rapid submillimeter (submm gamma-ray-bursts (GRBs follow-up observations conducted using the Greenland Telescope (GLT are presented. The GLT is a 12-m submm telescope to be located at the top of the Greenland ice sheet, where the high altitude and dry weather porvide excellent conditions for observations at submm wavelengths. With its combination of wavelength window and rapid responding system, the GLT will explore new insights on GRBs. Summarizing the current achievements of submm GRB follow-ups, we identify the following three scientific goals regarding GRBs: (1 systematic detection of bright submm emissions originating from reverse shock (RS in the early afterglow phase, (2 characterization of forward shock and RS emissions by capturing their peak flux and frequencies and performing continuous monitoring, and (3 detections of GRBs at a high redshift as a result of the explosion of first generation stars through systematic rapid follow-ups. The light curves and spectra calculated by available theoretical models clearly show that the GLT could play a crucial role in these studies.

  4. Submillimeter Array 12CO (2-1) Imaging of the NGC 6946 Giant Molecular Clouds

    Science.gov (United States)

    Wu, Ya-Lin; Sakamoto, Kazushi; Pan, Hsi-An

    2017-04-01

    We present a 12CO (2-1) mosaic map of the spiral galaxy NGC 6946 by combining data from the Submillimeter Array and the IRAM 30 m telescope. We identify 390 giant molecular clouds (GMCs) from the nucleus to 4.5 kpc in the disk. GMCs in the inner 1 kpc are generally more luminous and turbulent, some of which have luminosities >106 K km s-1 pc2 and velocity dispersions >10 km s-1. Large-scale bar-driven dynamics likely regulate GMC properties in the nuclear region. Similar to the Milky Way and other disk galaxies, GMC mass function of NGC 6946 has a shallower slope (index > -2) in the inner region, and a steeper slope (index outer region. This difference in mass spectra may be indicative of different cloud formation pathways: gravitational instabilities might play a major role in the nuclear region, while cloud coalescence might be dominant in the outer disk. Finally, the NGC 6946 clouds are similar to those in M33 in terms of statistical properties, but they are generally less luminous and turbulent than the M51 clouds.

  5. Rapid Asymmetric Inflation and Early Cosmology in Theories with Sub-Millimeter Dimensions

    CERN Document Server

    Arkani-Hamed, N; Kaloper, Nemanja; March-Russell, John David; Arkani-Hamed, Nima; Dimopoulos, Savas; Kaloper, Nemanja; March-Russell, John

    2000-01-01

    It was recently pointed out that the fundamental Planck mass could be close to the TeV scale with the observed weakness of gravity at long distances being due the existence of new sub-millimeter spatial dimensions. In this picture the standard model fields are localized to a $(3+1)$-dimensional wall or ``3-brane''. We show that in such theories there exist attractive models of inflation that occur while the size of the new dimensions are still small. We show that it is easy to produce the required number of efoldings, and further that the density perturbations $\\delta\\rho/\\rho$ as measured by COBE can be easily reproduced, both in overall magnitude and in their approximately scale-invariant spectrum. In the minimal approach, the inflaton field is just the moduli describing the size of the internal dimensions, the role of the inflationary potential being played by the stabilizing potential of the internal space. We show that under quite general conditions, the inflationary era is followed by an epoch of contra...

  6. DETECTION OF AN ULTRA-BRIGHT SUBMILLIMETER GALAXY BEHIND THE SMALL MAGELLANIC CLOUD

    Energy Technology Data Exchange (ETDEWEB)

    Takekoshi, Tatsuya; Minamidani, Tetsuhiro; Sorai, Kazuo; Habe, Asao [Department of Cosmosciences, Graduate School of Science, Hokkaido University, Sapporo 060-0810 (Japan); Tamura, Yoichi; Kohno, Kotaro [Institute of Astronomy, University of Tokyo, Osawa, Mitaka, Tokyo 181-0015 (Japan); Oogi, Taira [Department of Physics, Faculty of Science, Hokkaido University, Sapporo 060-0810 (Japan); Ezawa, Hajime; Komugi, Shinya; Mizuno, Norikazu; Muller, Erik; Kawamura, Akiko [Chile Observatory, National Astronomical Observatory, Mitaka, Tokyo 181-8588 (Japan); Oshima, Tai [Nobeyama Radio Observatory, National Astronomical Observatory of Japan, Minamimaki, Minamisaku, Nagano 384-1305 (Japan); Scott, Kimberly S. [North American ALMA Science Center, National Radio Astronomy Observatory, Charlottesville, VA 22903 (United States); Austermann, Jason E. [Center for Astrophysics and Space Astronomy, University of Colorado, Boulder, CO 80309 (United States); Tosaki, Tomoka [Joetsu University of Education, Joetsu, Niigata 943-8512 (Japan); Onishi, Toshikazu [Department of Physical Science, Osaka Prefecture University, Gakuen 1-1, Sakai, 599-8531 Osaka (Japan); Fukui, Yasuo [Department of Astrophysics, Nagoya University, Chikusa-ku, Nagoya 464-8602 (Japan); Matsuo, Hiroshi [Advanced Technology Center, National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan); Aretxaga, Itziar [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), 72000 Puebla (Mexico); and others

    2013-09-10

    We report the discovery of a new ultra-bright submillimeter galaxy (SMG) behind the Small Magellanic Cloud (SMC). This SMG is detected as a 43.3 {+-} 8.4 mJy point source (MM J01071-7302, hereafter MMJ0107) in the 1.1 mm continuum survey of the SMC by AzTEC on the ASTE telescope. MMJ0107 is also detected in the radio (843 MHz), Herschel/SPIRE, Spitzer MIPS 24 {mu}m, all IRAC bands, Wide-field Infrared Survey Explorer, and near-infrared (J, H, K{sub S} ). We find an optical (U, B, V) source, which might be the lensing object, at a distance of 1.''4 from near-infrared and IRAC sources. Photometric redshift estimates for the SMG using representative spectral energy distribution templates show the redshifts of 1.4-3.9. We estimate total far-infrared luminosity of (0.3-2.2) Multiplication-Sign 10{sup 14} {mu}{sup -1} L{sub Sun} and a star formation rate of 5600-39, 000 {mu}{sup -1} M{sub Sun} yr{sup -1}, where {mu} is the gravitational magnification factor. This apparent extreme star formation activity is likely explained by a highly magnified gravitational lens system.

  7. Hybrid transistor manipulation controlled by light within a PANDA microring resonator.

    Science.gov (United States)

    Chantanetra, Soontorn; Teeka, Chat; Mitatha, Somsak; Jomtarak, Rangsan; Yupapin, Preecha P

    2012-06-01

    In this paper, the novel type of transistor known as a hybrid transistor is proposed, in which all types of transistors can be formed by using a microring resonator called a PANDA microring resonator. In principle, such a transistor can be used to form for various transistor types by using the atom/molecule trapping tools, which is named by an optical tweezer, where in application all type of transistors, especially, molecule and photon transistors can be performed by using the trapping tools, which will be described in details.

  8. Plasma waves

    CERN Document Server

    Swanson, DG

    1989-01-01

    Plasma Waves discusses the basic development and equations for the many aspects of plasma waves. The book is organized into two major parts, examining both linear and nonlinear plasma waves in the eight chapters it encompasses. After briefly discussing the properties and applications of plasma wave, the book goes on examining the wave types in a cold, magnetized plasma and the general forms of the dispersion relation that characterize the waves and label the various types of solutions. Chapters 3 and 4 analyze the acoustic phenomena through the fluid model of plasma and the kinetic effects. Th

  9. Wave Star

    DEFF Research Database (Denmark)

    Kramer, Morten; Brorsen, Michael; Frigaard, Peter

    Denne rapport beskriver numeriske beregninger af forskellige flydergeometrier for bølgeenergianlæget Wave Star.......Denne rapport beskriver numeriske beregninger af forskellige flydergeometrier for bølgeenergianlæget Wave Star....

  10. Heat Waves

    Science.gov (United States)

    Heat Waves Dangers we face during periods of very high temperatures include: Heat cramps: These are muscular pains and ... having trouble with the heat. If a heat wave is predicted or happening… - Slow down. Avoid strenuous ...

  11. Meyer-Neldel rule in fullerene field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ullah, Mujeeb; Sitter, H. [Johannes Kepler University Linz (Austria). Institute of Semiconductor and Solid State Physics; Singh, T.B.; Sariciftci, N.S. [Johannes Kepler University Linz (AT). Institute of Organic Solar Cells (LIOS), Institute of Physical Chemistry

    2009-11-15

    The temperature dependence of the field-effect mobility is investigated in vacuum evaporated C{sub 60}-based organic field-effect transistors. The results show a thermally activated behavior with an activation energy that depends on the field-induced charge carrier density in the transistor channel. Upon extrapolation of the data in an Arrhenius plot we find an empirical relation, termed the Meyer-Neldel rule, which states that the mobility prefactor increases exponentially with the activation energy. Based on this analysis a characteristic temperature is extracted. The possible implications of this observation in terms of charge transport in fullerene-based field-effect transistors are discussed. (orig.)

  12. A gallium phosphide high-temperature bipolar junction transistor

    Science.gov (United States)

    Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

    1981-01-01

    Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

  13. Large magnetocurrents in double-barrier tunneling transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J.H. [Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Physics, Korea University, Chochiwon 339-700 (Korea, Republic of); Jun, K.-I. [Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Shin, K.-H. [Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Park, S.Y. [Department of Physics, Korea University, Chochiwon 339-700 (Korea, Republic of); Hong, J.K. [Department of Physics, Korea University, Chochiwon 339-700 (Korea, Republic of); Rhie, K. [Department of Physics, Korea University, Chochiwon 339-700 (Korea, Republic of)]. E-mail: krhie@korea.ac.kr; Lee, B.C. [Department of Physics, Inha University, Incheon (Korea, Republic of)

    2005-02-01

    Magnetic tunneling transistors (MTT) with double tunneling barriers are fabricated. The structure of the transistor is AFM/FM/I/FM/I/FM/AFM, and ferromagnetic layers serve as the emitter, base and collector. This double-barrier tunneling transistor (DBTT) has an advantage of controlling the potential between the base and collector, compared to the Schottky-barrier-based base and collector of MTT. We found that the collector current density of DBTT is at least 10{sup 3} times larger than that of conventional MTT, since tunneling through AlO{sub x} barrier provides much larger current density than that through Schottky barrier.

  14. GaN transistors for efficient power conversion

    CERN Document Server

    Lidow, Alex; de Rooij, Michael; Reusch, David

    2014-01-01

    The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

  15. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors

    Science.gov (United States)

    Ren, F.; Douglas, E. A.; Pearton, Stephen J.

    The two main GaAs-based electronic device technologies are high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). Both technologies are commercialized for use in low-noise amplifiers, radar, and fiber optic data transmission systems. In this chapter, we will summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported but differ in the two device technologies - for HEMTs, the layers are thin and relatively lightly doped compared to HBT structures, and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

  16. Wave Dragon

    DEFF Research Database (Denmark)

    Kofoed, Jens Peter; Frigaard, Peter; Sørensen, H. C.

    1998-01-01

    This paper concerns with the development of the wave energy converter (WEC) Wave Dragon. This WEC is based on the overtopping principle. An overview of the performed research done concerning the Wave Dragon over the past years is given, and the results of one of the more comprehensive studies......, concerning a hydraulic evaluation and optimisation of the geometry of the Wave Dragon, is presented. Furthermore, the plans for the future development projects are sketched....

  17. Gravitational Waves

    Energy Technology Data Exchange (ETDEWEB)

    Miller, Jonah Maxwell [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-10-18

    This report has slides on Gravitational Waves; Pound and Rebka: A Shocking Fact; Light is a Ruler; Gravity is the Curvature of Spacetime; Gravitational Waves Made Simple; How a Gravitational Wave Affects Stuff Here; LIGO; This Detection: Neutron Stars; What the Gravitational Wave Looks Like; The Sound of Merging Neutron Stars; Neutron Star Mergers: More than GWs; The Radioactive Cloud; The Kilonova; and finally Summary, Multimessenger Astronomy.

  18. Micro-Spec: an Integrated, Direct-Detection Spectrometer for Far-Infrared and Submillimeter Astronomy

    Science.gov (United States)

    Cataldo, Giuseppe

    2014-01-01

    The far-infrared and submillimeter portions of the electromagnetic spectrum provide a unique view of the astrophysical processes present in the early universe. Our ability to fully explore this rich spectral region has been limited, however, by the size and cost of the cryogenic spectrometers required to carry out such measurements. Micro-Spec (u-Spec) is a high-sensitivity, direct-detection spectrometer concept working in the 450-1000 micromillimeter wavelength range which will enable a wide range of flight missions that would otherwise be challenging due to the large size of current instruments with the required spectral resolution and sensitivity. The spectrometer design utilizes two internal antenna arrays, one for transmitting and one for receiving, superconducting microstrip transmission lines for power division and phase delay, and an array of microwave kinetic inductance detectors (MKIDs) to achieve these goals. The instrument will be integrated on a approximately 10 square cm silicon chip and can therefore become an important capability under the low background conditions accessible via space and high-altitude borne platforms. In this paper, an optical design methodology for Micro-Spec is presented, with particular attention given to its twodimensional diffractive region, where the light of different wavelengths is focused on the different detectors. The method is based on the maximization of the instrument resolving power and minimization of the RMS phase error on the instrument focal plane. This two-step optimization can generate geometrical configurations given specific requirements on spectrometer size, operating spectral range and performance. A point design with resolving power of 257, an RMS phase error less than 0.1 radians and four stigmatic points was developed for initial demonstration and will be the basis of future instruments with resolving power up to about 1200.

  19. SHARC II: A Caltech Submillimeter Observatory Facility Camera with 384 Pixels

    Science.gov (United States)

    Dowell, C. Darren; Allen, Christine A.; Babu, Sachidananda; Freund, Minoru; Gardner, Matthew B.; Groseth, Jeffrey; Jhabvala, Murzy; Kovacs, Attila; Lis, Dariusz C.; Moseley, S. Harvey, Jr.

    2002-01-01

    SHARC II is a background-limited 350 micron and 450 micron facility camera for the Caltech Submillimeter Observatory undergoing commissioning in 2002. The key component of SHARC II is a 12 x 32 array of doped silicon 'pop-up' bolometers developed at NASA/Goddard. Each 1 mm x 1 mm pixel is coated with a 400 Omega/square bismuth film and located lambda/4 above a reflective backshort to achieve greater than 75% absorption efficiency. The pixels cover the focal plane with greater than 90% filling factor. At 350 microns, the SHARC II pixels are separated by 0.65 lambda/D. In contrast to the silicon bolometers in the predecessor of SHARC II, each doped thermistor occupies nearly the full area of the pixel, which lowers the 1/f knee of tile detector noise to less than 0.03 Hz, under load, at tile bath temperature of 0.36 K. The bolometers are AC-biased and read in 'total power' mode to take advantage of the improved stability. Each bolometer is biased through a custom approx. 130 MOmega CrSi load resistor at 7 K and read with a commercial JFET at 120 K. The JFETs and load resistors are integrated with the detectors into a single assembly to minimize microphonic noise. Electrical connection across the 0.36 K to 4 K and 4 K to 120 K temperature interfaces is accomplished with lithographed metal wires on dielectric substrates. In the best 25% of winter nights on Mauna Kea, SHARC II is expected to have an NEFD at 350 micron of 1 Jy Hz(sup -1/2) or better. The new camera should be at least 4 times faster at detecting known point sources and 30 times faster at mapping large areas compared to the prior instrument.

  20. SUBMILLIMETER ARRAY AND SPITZER OBSERVATIONS OF BOK GLOBULE CB 17: A CANDIDATE FIRST HYDROSTATIC CORE?

    Energy Technology Data Exchange (ETDEWEB)

    Chen Xuepeng; Arce, Hector G.; Dunham, Michael M. [Department of Astronomy, Yale University, Box 208101, New Haven, CT 06520-8101 (United States); Zhang Qizhou; Bourke, Tyler L. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Launhardt, Ralf; Schmalzl, Markus; Henning, Thomas, E-mail: xuepeng.chen@yale.edu [Max Planck Institute for Astronomy, Koenigstuhl 17, D-69117 Heidelberg (Germany)

    2012-06-01

    We present high angular resolution Submillimeter Array (SMA) and Spitzer observations toward the Bok globule CB 17. SMA 1.3 mm dust continuum images reveal within CB 17 two sources with an angular separation of {approx}21'' ({approx}5250 AU at a distance of {approx}250 pc). The northwestern continuum source, referred to as CB 17 IRS, dominates the infrared emission in the Spitzer images, drives a bipolar outflow extending in the northwest-southeast direction, and is classified as a low-luminosity Class 0/I transition object (L{sub bol} {approx} 0.5 L{sub Sun }). The southeastern continuum source, referred to as CB 17 MMS, has faint dust continuum emission in the SMA 1.3 mm observations ({approx}6{sigma} detection; {approx}3.8 mJy), but is not detected in the deep Spitzer infrared images at wavelengths from 3.6 to 70 {mu}m. Its bolometric luminosity and temperature, estimated from its spectral energy distribution, are {<=}0.04 L{sub Sun} and {<=}16 K, respectively. The SMA CO (2-1) observations suggest that CB 17 MMS may drive a low-velocity molecular outflow ({approx}2.5 km s{sup -1}), extending in the east-west direction. Comparisons with prestellar cores and Class 0 protostars suggest that CB 17 MMS is more evolved than prestellar cores but less evolved than Class 0 protostars. The observed characteristics of CB 17 MMS are consistent with the theoretical predictions from radiative/magnetohydrodynamical simulations of a first hydrostatic core, but there is also the possibility that CB 17 MMS is an extremely low luminosity protostar deeply embedded in an edge-on circumstellar disk. Further observations are needed to study the properties of CB 17 MMS and to address more precisely its evolutionary stage.

  1. An ALMA Survey of Submillimeter Galaxies in the Extended Chandra Deep Field South: Spectroscopic Redshifts

    Science.gov (United States)

    Danielson, A. L. R.; Swinbank, A. M.; Smail, Ian; Simpson, J. M.; Casey, C. M.; Chapman, S. C.; da Cunha, E.; Hodge, J. A.; Walter, F.; Wardlow, J. L.; Alexander, D. M.; Brandt, W. N.; de Breuck, C.; Coppin, K. E. K.; Dannerbauer, H.; Dickinson, M.; Edge, A. C.; Gawiser, E.; Ivison, R. J.; Karim, A.; Kovacs, A.; Lutz, D.; Menten, K.; Schinnerer, E.; Weiß, A.; van der Werf, P.

    2017-05-01

    We present spectroscopic redshifts of {\\text{}}{S}870μ {{m}} ≳ 2 mJy submillimeter galaxies (SMGs), which have been identified from the ALMA follow-up observations of 870 μm detected sources in the Extended Chandra Deep Field South (the ALMA-LESS survey). We derive spectroscopic redshifts for 52 SMGs, with a median of z = 2.4 ± 0.1. However, the distribution features a high-redshift tail, with ˜23% of the SMGs at z≥slant 3. Spectral diagnostics suggest that the SMGs are young starbursts, and the velocity offsets between the nebular emission and UV ISM absorption lines suggest that many are driving winds, with velocity offsets of up to 2000 km s-1. Using the spectroscopic redshifts and the extensive UV-to-radio photometry in this field, we produce optimized spectral energy distributions (SEDs) using Magphys, and use the SEDs to infer a median stellar mass of {M}\\star = (6 ± 1)× 1010 M {}⊙ for our SMGs with spectroscopic redshift. By combining these stellar masses with the star formation rates (measured from the far-infrared SEDs), we show that SMGs (on average) lie a factor of ˜5 above the so-called “main sequence” at z˜ 2. We provide this library of 52 template fits with robust and uniquely well-sampled SEDs as a resource for future studies of SMGs, and also release the spectroscopic catalog of ˜2000 (mostly infrared-selected) galaxies targeted as part of the spectroscopic campaign.

  2. A submillimeter galaxy illuminating its circumgalactic medium: Lyα scattering in a cold, clumpy outflow

    Energy Technology Data Exchange (ETDEWEB)

    Geach, J. E.; Coppin, K. E. K.; Smith, D. J. B. [Center for Astrophysics Research, Science and Technology Research Institute, University of Hertfordshire, Hatfield AL10 9AB (United Kingdom); Bower, R. G.; Alexander, D. M.; Swinbank, A. M. [Institute for Computational Cosmology, Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Blain, A. W. [Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Bremer, M. N. [School of Physics, HH Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Chapin, E. L. [XMM SOC, ESAC, Apartado 78, E-28691 Villanueva de la Canada, Madrid (Spain); Chapman, S. C. [Department of Physics and Atmospheric Science, Dalhousie University Halifax, NS B3H 3J5 (Canada); Clements, D. L. [Astrophysics Group, Imperial College London, Blackett Laboratory, Prince Consort Road, London SW7 2AZ (United Kingdom); Dunlop, J. S.; Koprowski, M. P.; Michałowski, M. J. [Institute for Astronomy, University of Edinburgh, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Farrah, D. [Virginia Polytechnic Institute and State University Department of Physics, MC 0435, 910 Drillfield Drive, Blacksburg, VA 24061 (United States); Jenness, T. [Joint Astronomy Centre, 660 North A' ohoku Place University Park, Hilo, HI 96720 (United States); Robson, E. I. [UK Astronomy Technology Centre, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Scott, D. [Department of Physics and Astronomy, University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1 (Canada); Spaans, M. [Kapteyn Institute, University of Groningen, PO Box 800, 9700 AV Groningen (Netherlands); Van der Werf, P., E-mail: j.geach@herts.ac.uk [Leiden Observatory, Leiden University, PO box 9513, 2300 RA Leiden (Netherlands)

    2014-09-20

    We report the detection at 850 μm of the central source in SSA22-LAB1, the archetypal 'Lyman-α Blob' (LAB), a 100 kpc scale radio-quiet emission-line nebula at z = 3.1. The flux density of the source, S {sub 850} = 4.6 ± 1.1 mJy, implies the presence of a galaxy or group of galaxies with a total luminosity of L {sub IR} ≈ 10{sup 12} L {sub ☉}. The position of an active source at the center of a ∼50 kpc radius ring of linearly polarized Lyα emission detected by Hayes et al. suggests that the central source is leaking Lyα photons preferentially in the plane of the sky, which undergo scattering in H I clouds at a large galactocentric radius. The Lyα morphology around the submillimeter detection is reminiscent of a biconical outflow, and the average Lyα line profiles of the two 'lobes' are dominated by a red peak, which is expected for a resonant line emerging from a medium with a bulk velocity gradient that is outflowing relative to the line center. Taken together, these observations provide compelling evidence that the central active galaxy (or galaxies) is responsible for a large fraction of the extended Lyα emission and morphology. Less clear is the history of the cold gas in the circumgalactic medium being traced by Lyα: is it mainly pristine material accreting into the halo that has not yet been processed through an interstellar medium (ISM), now being blown back as it encounters an outflow, or does it mainly comprise gas that has been swept-up within the ISM and expelled from the galaxy?.

  3. Improved wedge method for the measurement of sub-millimeter slice thicknesses in magnetic resonance imaging.

    Science.gov (United States)

    Kanazawa, Tsutomu; Ohkubo, Masaki; Kondo, Tatsuya; Miyazawa, Takayuki; Inagawa, Shoichi

    2017-12-01

    The standard method for measuring the slice thickness of magnetic resonance images uses the inclined surface of a wedge (wedge method); it is sensitive to small increases in noise because of the differentiation of the edge response function (ERF) required. The purpose of this study was to improve the wedge method by fitting a curve to the ERF. The curve-fit function was obtained by convolving an ideal ERF (a ramp function) with a Gaussian function to represent ERF blurring. Measurements of 5- and 3-mm slice thicknesses were performed on a 3T scanner using the conventional wedge method, the improved wedge method, and another standard method using an inclined slab (slab method). Subsequently, 0.5- and 0.25-mm slice thicknesses from multiple slices acquired using a three-dimensional sequence were measured using the improved wedge method. When measuring 5-mm slices, the differences in measurements obtained using the improved wedge method and the conventional slab and wedge methods were very small: <0.6% of the 5-mm slice thickness. The difference was ≤1.7% for 3-mm slices. For 0.5- and 0.25-mm slices, the mean values obtained using the improved wedge method were 0.543 ± 0.007 mm and 0.247 ± 0.015 mm, with a 1.2 and 5.9% coefficient of variation across slices, respectively. The improved wedge method is valid and potentially applicable to the measurement of sub-millimeter slice thicknesses.

  4. A sub-millimeter resolution detector module for small-animal PET applications

    Science.gov (United States)

    Sacco, I.; Dohle, R.; Fischer, P.; Gola, A.; Piemonte, C.; Ritzert, M.

    2017-01-01

    We present a gamma detection module optimized for very high resolution PET applications, able to resolve arrays of scintillating crystals with sub-millimeter pitch. The detector is composed of a single ceramic substrate (LTCC): it hosts four flip-chip mounted PETA5 ASICs on the bottom side and an array of SiPM sensors on the top surface, fabricated in HD-RGB technology by FBK. Each chip has 36 channels, for a maximum of 144 readout channels on a sensitive area of about 32 mm × 32 mm. The module is MR-compatible. The thermal decoupling of the readout electronics from the photon sensors is obtained with an efficient internal liquid channel, integrated within the ceramic substrate. Two modules have been designed, based on different SiPM topologies: • Light spreader-based: an array of 12 × 12 SiPMs, with an overall pitch of 2.5 mm, is coupled with a scintillators array using a 1 mm thick glass plate. The light from one crystal is spread over a group of SiPMs, which are read out in parallel using PETA5 internal neighbor logic. • Interpolating SiPM-based: ISiPMs are intrinsic position-sensitive sensors. The photon diodes in the array are connected to one of the four available outputs so that the center of gravity of any bunch of detected photons can be reconstructed using a proper weight function of the read out amplitudes. An array of ISiPMs, each 7.5 mm× 5 mm sized, is directly coupled with the scintillating crystals. Both modules can clearly resolve LYSO arrays with a pitch of only 0.833 mm. The detector can be adjusted for clinical PET, where it has already shown ToF resolution of about 230 ps CRT at FWHM. The module designs, their features and results are described.

  5. The rest-frame submillimeter spectrum of high-redshift, dusty, star-forming galaxies

    Energy Technology Data Exchange (ETDEWEB)

    Spilker, J. S.; Marrone, D. P. [Steward Observatory, University of Arizona, 933 North Cherry Avenue, Tucson, AZ 85721 (United States); Aguirre, J. E. [University of Pennsylvania, 209 South 33rd Street, Philadelphia, PA 19104 (United States); Aravena, M. [European Southern Observatory, Alonso de Cordova 3107, Casilla 19001 Vitacura Santiago (Chile); Ashby, M. L. N. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Béthermin, M. [Laboratoire AIM-Paris-Saclay, CEA/DSM/Irfu-CNRS-Université Paris Diderot, CEA-Saclay, Orme des Merisiers, F-91191 Gif-sur-Yvette (France); Bradford, C. M. [Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, CA 91109 (United States); Bothwell, M. S. [Cavendish Laboratory, University of Cambridge, JJ Thompson Ave, Cambridge CB3 0HA (United Kingdom); Brodwin, M. [Department of Physics and Astronomy, University of Missouri, 5110 Rockhill Road, Kansas City, MO 64110 (United States); Carlstrom, J. E.; Crawford, T. M. [Kavli Institute for Cosmological Physics, University of Chicago, 5640 South Ellis Avenue, Chicago, IL 60637 (United States); Chapman, S. C. [Dalhousie University, Halifax, Nova Scotia (Canada); De Breuck, C.; Gullberg, B. [European Southern Observatory, Karl Schwarzschild Straße 2, D-85748 Garching (Germany); Fassnacht, C. D. [Department of Physics, University of California, One Shields Avenue, Davis, CA 95616 (United States); Gonzalez, A. H. [Department of Astronomy, University of Florida, Gainesville, FL 32611 (United States); Greve, T. R. [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom); Hezaveh, Y. [Department of Physics, McGill University, 3600 Rue University, Montreal, Quebec H3A 2T8 (Canada); Holzapfel, W. L., E-mail: jspilker@as.arizona.edu [Department of Physics, University of California, Berkeley, CA 94720 (United States); and others

    2014-04-20

    We present the average rest-frame spectrum of high-redshift dusty, star-forming galaxies from 250 to 770 GHz. This spectrum was constructed by stacking Atacama Large Millimeter/submillimeter Array (ALMA) 3 mm spectra of 22 such sources discovered by the South Pole Telescope and spanning z = 2.0-5.7. In addition to multiple bright spectral features of {sup 12}CO, [C I], and H{sub 2}O, we also detect several faint transitions of {sup 13}CO, HCN, HNC, HCO{sup +}, and CN, and use the observed line strengths to characterize the typical properties of the interstellar medium of these high-redshift starburst galaxies. We find that the {sup 13}CO brightness in these objects is comparable to that of the only other z > 2 star-forming galaxy in which {sup 13}CO has been observed. We show that the emission from the high-critical density molecules HCN, HNC, HCO{sup +}, and CN is consistent with a warm, dense medium with T {sub kin} ∼ 55 K and n{sub H{sub 2}}≳10{sup 5.5} cm{sup –3}. High molecular hydrogen densities are required to reproduce the observed line ratios, and we demonstrate that alternatives to purely collisional excitation are unlikely to be significant for the bulk of these systems. We quantify the average emission from several species with no individually detected transitions, and find emission from the hydride CH and the linear molecule CCH for the first time at high redshift, indicating that these molecules may be powerful probes of interstellar chemistry in high-redshift systems. These observations represent the first constraints on many molecular species with rest-frame transitions from 0.4 to 1.2 mm in star-forming systems at high redshift, and will be invaluable in making effective use of ALMA in full science operations.

  6. High-resolution submillimeter and near-infrared studies of the transition disk around Sz 91

    Energy Technology Data Exchange (ETDEWEB)

    Tsukagoshi, Takashi; Momose, Munetake [College of Science, Ibaraki University, Bunkyo 2-1-1, Mito 310-8512 (Japan); Hashimoto, Jun [Department of Physics and Astronomy, The University of Oklahoma, 440 West Brooks Street, Norman, OK 73019 (United States); Kudo, Tomoyuki; Saito, Masao; Ohashi, Nagayoshi; Kawabe, Ryohei; Akiyama, Eiji [National Astronomical Observatory Japan (NAOJ), Osawa 2-21-1, Mitaka, Tokyo 181-8588 (Japan); Andrews, Sean; Wilner, David [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Kitamura, Yoshimi [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Yoshinodai 3-1-1, Sagamihara, Kanagawa 229-8510 (Japan); Abe, Lyu [Lboratoire Lagrange (UMR 7293), Université de Nice-Sophia Antipolis, CNRS, Observatoire de la Côte d' Azur, 28 avenue Valrose, F-06108 Nice Cedex 2 (France); Brandner, Wolfgang [Max Planck Institute for Astronomy, Königstuhl 17, D-69117 Heidelberg (Germany); Brandt, Timothy D. [Department of Astrophysical Sciences, Princeton University, Peyton Hall, Ivy Lane, Princeton, NJ 08544 (United States); Carson, Joseph [Department of Physics and Astronomy, College of Charleston, 58 Coming Street, Charleston, SC 29424 (United States); Currie, Thayne [Department of Astronomy and Astrophysics, University of Toronto, 50 St. George Street M5S 3H4, Toronto, Ontario (Canada); Egner, Sebastian E.; Guyon, Olivier [Subaru Telescope, 650 North A' ohoku Place, Hilo, HI 96720 (United States); Goto, Miwa [Universitäts-Sternwarte München, Ludwig-Maximilians-Universität, Scheinerstr. 1, D-81679 München (Germany); Grady, Carol, E-mail: ttsuka@mx.ibaraki.ac.jp [Exoplanets and Stellar Astrophysics Laboratory, Code 667, Goddard Space Flight Center, Greenbelt, MD 20771 (United States); and others

    2014-03-10

    To reveal the structures of a transition disk around a young stellar object in Lupus, Sz 91 , we have performed aperture synthesis 345 GHz continuum and CO(3-2) observations with the Submillimeter Array (∼1''-3'' resolution) and high-resolution imaging of polarized intensity at the K{sub s} -band using the HiCIAO instrument on the Subaru Telescope (0.''25 resolution). Our observations successfully resolved the inner and outer radii of the dust disk to be 65 and 170 AU, respectively, which indicates that Sz 91 is a transition disk source with one of the largest known inner holes. The model fitting analysis of the spectral energy distribution reveals an H{sub 2} mass of 2.4 × 10{sup –3} M {sub ☉} in the cold (T < 30 K) outer part at 65 AU 3 × 10{sup –9} M {sub ☉}) of hot (T ∼ 180 K) dust possibly remains inside the inner hole of the disk. The structure of the hot component could be interpreted as either an unresolved self-luminous companion body (not directly detected in our observations) or a narrow ring inside the inner hole. Significant CO(3-2) emission with a velocity gradient along the major axis of the dust disk is concentrated on the Sz 91 position, suggesting a rotating gas disk with a radius of 420 AU. The Sz 91 disk is possibly a rare disk in an evolutionary stage immediately after the formation of protoplanets because of the large inner hole and the lower disk mass than other transition disks studied thus far.

  7. Metrology Arrangement for Measuring the Positions of Mirrors of a Submillimeter Telescope

    Science.gov (United States)

    Abramovici, Alex; Bartman, Randall K.

    2011-01-01

    The position of the secondary mirror of a submillimeter telescope with respect to the primary mirror needs to be known .0.03 mm in three dimensions. At the time of this reporting, no convenient, reasonably priced arrangement that offers this capability exists. The solution proposed here relies on measurement devices developed and deployed for the GeoSAR mission, and later adapted for the ISAT (Innovative Space Based Radar Antenna Technology) demonstration. The measurement arrangement consists of four metrology heads, located on an optical bench, attached to the secondary mirror. Each metrology head has a dedicated target located at the edge of the primary mirror. One laser beam, launched from the head and returned by the target, is used to measure distance. Another beam, launched from a beacon on the target, is monitored by the metrology head and generates a measurement of the target position in the plane perpendicular to the laser beam. A 100-MHz modulation is carried by a collimated laser beam. The relevant wavelength is the RF one, 3 m, divided by two, because the light carries it to the target and back. The phase change due to travel to the target and back is measured by timing the zero-crossing of the RF modulation, using a 100-MHz clock. In order to obtain good resolution, the 100-MHz modulation signal is down-converted to 1 kHz. Then, the phase change corresponding to the round-trip to the target is carried by a 1-kHz signal. Since the 100-MHz clock beats 100,000 times during one period of the 1-kHz signal, the least-significant-bit (LSB) resolution is LSB = 0.015 mm.

  8. Electromagnetic Waves

    OpenAIRE

    Blok, H.; van den Berg, P.M.

    2011-01-01

    This book is dedicated to various aspects of electromagnetic wave theory and its applications in science and technology. The covered topics include the fundamental physics of electromagnetic waves, theory of electromagnetic wave propagation and scattering, methods of computational analysis, material characterization, electromagnetic properties of plasma, analysis and applications of periodic structures and waveguide components, etc.

  9. Wave Dragon

    DEFF Research Database (Denmark)

    Tedd, James; Kofoed, Jens Peter; Knapp, W.

    2006-01-01

    Wave Dragon is a floating wave energy converter working by extracting energy principally by means of overtopping of waves into a reservoir. A 1:4.5 scale prototype has been sea tested for 20 months. This paper presents results from testing, experiences gained and developments made during...

  10. Wave phenomena

    CERN Document Server

    Towne, Dudley H

    1988-01-01

    This excellent undergraduate-level text emphasizes optics and acoustics, covering inductive derivation of the equation for transverse waves on a string, acoustic plane waves, boundary-value problems, polarization, three-dimensional waves and more. With numerous problems (solutions for about half). ""The material is superbly chosen and brilliantly written"" - Physics Today. Problems. Appendices.

  11. Pressure Sensitive Insulated Gate Field Effect Transistor

    Science.gov (United States)

    Suminto, James Tjan-Meng

    A pressure sensitive insulated gate field effect transistor has been developed. The device is an elevated gate field-effect-transistor. It consists of a p-type silicon substrate in which two n^+ region, the source and drain, are formed. The gate electrode is a metal film sandwiched in an insulated micro-diaphragm resembling a pill-box which covers the gate oxide, drain, and source. The space between the gate electrode and the oxide is vacuum or an air-gap. When pressure is applied on the diaphragm it deflects and causes a change in the gate capacitance, and thus modulates the conductance of the channel between source and drain. A general theory dealing with the characteristic of this pressure sensitive insulated gate field effect transistor has been derived, and the device fabricated. The fabrication process utilizes the standard integrated circuit fabrication method. It features a batch fabrication of field effect devices followed by the batch fabrication of the deposited diaphragm on top of each field effect device. The keys steps of the diaphragm fabrication are the formation of spacer layer, formation of the diaphragm layer, and the subsequent removal of the spacer layer. The chip size of the device is 600 μm x 1050 mum. The diaphragm size is 200 μm x 200 mum. Characterization of the device has been performed. The current-voltage characteristics with pressure as parameters have been demonstrated and the current-pressure transfer curves obtained. They show non-linear characteristics as those of conventional capacitive pressure sensors. The linearity of threshold voltage versus pressure transfer curves has been demonstrated. The temperature effect on the device performances has been tested. The temperature coefficient of threshold voltage, rather than the electron mobility, has dominated the temperature coefficient of the device. Two temperature compensation schemes have been tested: one method is by connecting two identical PSIGFET in a differential amplifier

  12. From the organic thin film transistor to the 3-D textile organic cylindrical transistors – perspectives, expectations and predictions

    Science.gov (United States)

    Louris, E.; Stefanakis, D.; Priniotakis, G.; Van Langenhove, L.; Tassis, D.

    2017-10-01

    In this paper we examine the possibility to simulate and study the behaviour of a fiber-based Textile Transistor in a commercial TCAD system. We also examine the capability of such transistors to operate in sufficiently low voltages, aiming to the potential realization of low-voltage wearable textiles in the future. We have seen that it is potentially feasible to build transistors which can operate in low voltages by using typical materials. Even if some of the selected typical materials have to be replaced by others more suitable for practical use in the textile industry, the simulation is a good starting point for estimating the device typical operation and parameters.

  13. Modeling quantization effects in field effect transistors

    CERN Document Server

    Troger, C

    2001-01-01

    Numerical simulation in the field of semiconductor device development advanced to a valuable, cost-effective and flexible facility. The most widely used simulators are based on classical models, as they need to satisfy time and memory constraints. To improve the performance of field effect transistors such as MOSFETs and HEMTs these devices are continuously scaled down in their dimensions. Consequently the characteristics of such devices are getting more and more determined by quantum mechanical effects arising from strong transversal fields in the channel. In this work an approach based on a two-dimensional electron gas is used to describe the confinement of the carriers. Quantization is considered in one direction only. For the derivation of a one-dimensional Schroedinger equation in the effective mass framework a non-parabolic correction for the energy dispersion due to Kane is included. For each subband a non-parabolic dispersion relation characterized by subband masses and subband non-parabolicity coeffi...

  14. Schottky Barriers in Bilayer Phosphorene Transistors.

    Science.gov (United States)

    Pan, Yuanyuan; Dan, Yang; Wang, Yangyang; Ye, Meng; Zhang, Han; Quhe, Ruge; Zhang, Xiuying; Li, Jingzhen; Guo, Wanlin; Yang, Li; Lu, Jing

    2017-04-12

    It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 2D material field effect transistors (FETs) with strongly interacted electrode from the work function approximation (WFA) because of existence of the Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) phosphorene FETs in contact with a series of metals with a wide work function range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic band calculations and quantum transport simulation (QTS). Different from only one type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of SBs are identified in BL phosphorene FETs: the vertical SB between the metallized and the intact phosphorene layer, whose height is determined from the energy band analysis (EBA); the lateral SB between the metallized and the channel BL phosphorene, whose height is determined from the QTS. The vertical SBHs show a better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS compared than that of the popular WFA. Therefore, we develop a better and more general method than the WFA to estimate the lateral SBHs of ML semiconductor transistors with strongly interacted electrodes based on the EBA for its BL counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity and SBHs are in good agreement with available experiments. Our study provides an insight into the BL phosphorene-metal interfaces that are crucial for designing the BL phosphorene device.

  15. Bounding the total-dose response of modern bipolar transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kosier, S.L.; Wei, A.; Schrimpf, R.D. [Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering; Combs, W.E. [Naval Surface Warfare Center-Crane, Crane, IN (United States); Fleetwood, D.M. [Sandia National Labs., Albuquerque, NM (United States); DeLaus, M. [Analog Devices, Inc., Wilmington, MA (United States); Pease, R.L. [RLP Research, Albuquerque, NM (United States)

    1994-03-01

    The base current in modern bipolar transistors saturates at large total doses once a critical oxide charge is reached. The saturated value of base current is dose-rate independent. Testing implications are discussed.

  16. Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

    Data.gov (United States)

    National Aeronautics and Space Administration — Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to...

  17. Great Experiments in Physics-Discovery of Transistor Effect that ...

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 3; Issue 9. Great Experiments in Physics - Discovery of Transistor Effect that Changed the Communication World. Amit Roy. Series Article Volume 3 Issue 9 September 1998 pp 6-13 ...

  18. A nanoscale piezoelectric transformer for low-voltage transistors.

    Science.gov (United States)

    Agarwal, Sapan; Yablonovitch, Eli

    2014-11-12

    A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

  19. Microwave field-efffect transistors theory, design, and application

    CERN Document Server

    Pengelly, Raymond

    1994-01-01

    This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations.

  20. Mixed protonic and electronic conductors hybrid oxide synaptic transistors

    Science.gov (United States)

    Fu, Yang Ming; Zhu, Li Qiang; Wen, Juan; Xiao, Hui; Liu, Rui

    2017-05-01

    Mixed ionic and electronic conductor hybrid devices have attracted widespread attention in the field of brain-inspired neuromorphic systems. Here, mixed protonic and electronic conductor (MPEC) hybrid indium-tungsten-oxide (IWO) synaptic transistors gated by nanogranular phosphorosilicate glass (PSG) based electrolytes were obtained. Unique field-configurable proton self-modulation behaviors were observed on the MPEC hybrid transistor with extremely strong interfacial electric-double-layer effects. Temporally coupled synaptic plasticities were demonstrated on the MPEC hybrid IWO synaptic transistor, including depolarization/hyperpolarization, synaptic facilitation and depression, facilitation-stead/depression-stead behaviors, spiking rate dependent plasticity, and high-pass/low-pass synaptic filtering behaviors. MPEC hybrid synaptic transistors may find potential applications in neuron-inspired platforms.

  1. Reaching saturation in patterned source vertical organic field effect transistors

    Science.gov (United States)

    Greenman, Michael; Sheleg, Gil; Keum, Chang-min; Zucker, Jonathan; Lussem, Bjorn; Tessler, Nir

    2017-05-01

    Like most of the vertical transistors, the Patterned Source Vertical Organic Field Effect Transistor (PS-VOFET) does not exhibit saturation in the output characteristics. The importance of achieving a good saturation is demonstrated in a vertical organic light emitting transistor; however, this is critical for any application requiring the transistor to act as a current source. Thereafter, a 2D simulation tool was used to explain the physical mechanisms that prevent saturation as well as to suggest ways to overcome them. We found that by isolating the source facet from the drain-source electric field, the PS-VOFET architecture exhibits saturation. The process used for fabricating such saturation-enhancing structure is then described. The new device demonstrated close to an ideal saturation with only 1% change in the drain-source current over a 10 V change in the drain-source voltage.

  2. Self-Heating Effects In Polysilicon Source Gated Transistors

    National Research Council Canada - National Science Library

    Sporea, R A; Burridge, T; Silva, S R P

    2015-01-01

    Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy...

  3. Controlling charge current through a DNA based molecular transistor

    Energy Technology Data Exchange (ETDEWEB)

    Behnia, S., E-mail: s.behnia@sci.uut.ac.ir; Fathizadeh, S.; Ziaei, J.

    2017-01-05

    Molecular electronics is complementary to silicon-based electronics and may induce electronic functions which are difficult to obtain with conventional technology. We have considered a DNA based molecular transistor and study its transport properties. The appropriate DNA sequence as a central chain in molecular transistor and the functional interval for applied voltages is obtained. I–V characteristic diagram shows the rectifier behavior as well as the negative differential resistance phenomenon of DNA transistor. We have observed the nearly periodic behavior in the current flowing through DNA. It is reported that there is a critical gate voltage for each applied bias which above it, the electrical current is always positive. - Highlights: • Modeling a DNA based molecular transistor and studying its transport properties. • Choosing the appropriate DNA sequence using the quantum chaos tools. • Choosing the functional interval for voltages via the inverse participation ratio tool. • Detecting the rectifier and negative differential resistance behavior of DNA.

  4. Chemically modified field effect transistors with nitrite or fluoride selectivity

    NARCIS (Netherlands)

    Antonisse, M.M.G.; Ruel, Bianca H.M.; Engbersen, Johannes F.J.; Reinhoudt, David

    1998-01-01

    Polysiloxanes with different types of polar substituents are excellent membrane materials for nitrite and fluoride selective chemically modified field effect transistors (CHEMFETs). Nitrite selectivity has been introduced by incorporation of a cobalt porphyrin into the membrane; fluoride selectivity

  5. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures

    Science.gov (United States)

    Vrijen, Rutger; Yablonovitch, Eli; Wang, Kang; Jiang, Hong Wen; Balandin, Alex; Roychowdhury, Vwani; Mor, Tal; Divincenzo, David

    2000-07-01

    We apply the full power of modern electronic band-structure engineering and epitaxial heterostructures to design a transistor that can sense and control a single-donor electron spin. Spin-resonance transistors may form the technological basis for quantum information processing. One- and two-qubit operations are performed by applying a gate bias. The bias electric field pulls the electron wave function away from the dopant ion into layers of different alloy composition. Owing to the variation of the g factor (Si:g=1.998,Ge:g=1.563), this displacement changes the spin Zeeman energy, allowing single-qubit operations. By displacing the electron even further, the overlap with neighboring qubits is affected, which allows two-qubit operations. Certain silicon-germanium alloys allow a qubit spacing as large as 200 nm, which is well within the capabilities of current lithographic techniques. We discuss manufacturing limitations and issues regarding scaling up to a large size computer.

  6. A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

    Science.gov (United States)

    She, Xiao-Jian; Gustafsson, David; Sirringhaus, Henning

    2017-02-01

    A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Signal to Noise Ratio Maximization in Quiet Zone Acquisitions for Range Assessment at Sub-millimeter Wavelengths

    Directory of Open Access Journals (Sweden)

    A. Muñoz-Acevedo

    2012-06-01

    Full Text Available This paper proposes a quiet zone probing approach which deals with low dynamic range quiet zone acquisitions. Lack of dynamic range is a feature of millimeter and sub-millimeter wavelength technologies. It is consequence of the gradually smaller power generated by the instrumentation, that follows a f^α law with frequency, being α≥1 variable depending on the signal source’s technology. The proposed approach is based on an optimal data reduction scenario which redounds in a maximum signal to noise ratio increase for the signal pattern, with minimum information losses. After theoretical formulation, practical applications of the technique are proposed.

  8. H- beam extraction from a cesium seeded field effect transistor based radio frequency negative hydrogen ion source.

    Science.gov (United States)

    Ando, A; Matsuno, T; Funaoi, T; Tanaka, N; Tsumori, K; Takeiri, Y

    2012-02-01

    H(-) beam was successfully extracted from a cesium seeded ion source operated using a field effect transistor inverter power supply as a radio frequency (RF) wave source. High density hydrogen plasma more than 10(19) m(-3) was obtained using an external type antenna with RF frequency of lower than 0.5 MHz. The source was isolated by an isolation transformer and H(-) ion beam was extracted from a single aperture. Acceleration current and extraction current increased with the increase of extraction voltage. Addition of a small amount of cesium vapor into the source enhanced the currents.

  9. Large scale electromechanical transistor with application in mass sensing

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Leisheng; Li, Lijie, E-mail: L.Li@swansea.ac.uk [Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea SA2 8PP (United Kingdom)

    2014-12-07

    Nanomechanical transistor (NMT) has evolved from the single electron transistor, a device that operates by shuttling electrons with a self-excited central conductor. The unfavoured aspects of the NMT are the complexity of the fabrication process and its signal processing unit, which could potentially be overcome by designing much larger devices. This paper reports a new design of large scale electromechanical transistor (LSEMT), still taking advantage of the principle of shuttling electrons. However, because of the large size, nonlinear electrostatic forces induced by the transistor itself are not sufficient to drive the mechanical member into vibration—an external force has to be used. In this paper, a LSEMT device is modelled, and its new application in mass sensing is postulated using two coupled mechanical cantilevers, with one of them being embedded in the transistor. The sensor is capable of detecting added mass using the eigenstate shifts method by reading the change of electrical current from the transistor, which has much higher sensitivity than conventional eigenfrequency shift approach used in classical cantilever based mass sensors. Numerical simulations are conducted to investigate the performance of the mass sensor.

  10. Ultra-high gain diffusion-driven organic transistor

    Science.gov (United States)

    Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

    2016-01-01

    Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics. PMID:26829567

  11. Vertical Transistors Based on 2D Materials: Status and Prospects

    Directory of Open Access Journals (Sweden)

    Filippo Giannazzo

    2018-01-01

    Full Text Available Two-dimensional (2D materials, such as graphene (Gr, transition metal dichalcogenides (TMDs and hexagonal boron nitride (h-BN, offer interesting opportunities for the implementation of vertical transistors for digital and high-frequency electronics. This paper reviews recent developments in this field, presenting the main vertical device architectures based on 2D/2D or 2D/3D material heterostructures proposed so far. For each of them, the working principles and the targeted application field are discussed. In particular, tunneling field effect transistors (TFETs for beyond-CMOS low power digital applications are presented, including resonant tunneling transistors based on Gr/h-BN/Gr stacks and band-to-band tunneling transistors based on heterojunctions of different semiconductor layered materials. Furthermore, recent experimental work on the implementation of the hot electron transistor (HET with the Gr base is reviewed, due to the predicted potential of this device for ultra-high frequency operation in the THz range. Finally, the material sciences issues and the open challenges for the realization of 2D material-based vertical transistors at a large scale for future industrial applications are discussed.

  12. Stability investigation for InP DHBT mm‐wave power amplifier

    DEFF Research Database (Denmark)

    Yan, Lei; Johansen, Tom Keinicke; Kammersgaard, Jacob

    2013-01-01

    In this article, we discuss stability issues for mm‐wave monolithic integrated power amplifiers using InP double heterojunction bipolar transistor (DHBT) technology targeting E‐band applications at 71–76 GHz and 81–86 GHz. Different stability detection methods based on the classical two‐port K...

  13. 77 FR 1017 - Export and Reexport License Requirements for Certain Microwave and Millimeter Wave Electronic...

    Science.gov (United States)

    2012-01-09

    ... reexports to all destinations other than Canada of two types of microwave and millimeter wave electronic components. The two components are packaged high electron mobility transistors and packaged microwave... license requirement on exports and reexports to all destinations other than Canada of two types of...

  14. 77 FR 3386 - Export and Reexport License Requirements for Certain Microwave and Millimeter Wave Electronic...

    Science.gov (United States)

    2012-01-24

    ... imposed a license requirement on exports and reexports to all destinations other than Canada of two types... mobility transistors and packaged microwave ``monolithic integrated circuits'' power amplifiers that meet... reexports to all destinations other than Canada of two types of microwave and millimeter wave electronic...

  15. High spatial resolution brain functional MRI using submillimeter balanced steady-state free precession acquisition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Pei-Hsin; Chung, Hsiao-Wen [Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Tsai, Ping-Huei [Imaging Research Center, Taipei Medical University, Taipei 11031, Taiwan and Department of Medical Imaging, Taipei Medical University Hospital, Taipei Medical University, Taipei 11031, Taiwan (China); Wu, Ming-Long, E-mail: minglong.wu@csie.ncku.edu.tw [Institute of Medical Informatics, National Cheng-Kung University, Tainan 70101, Taiwan and Department of Computer Science and Information Engineering, National Cheng-Kung University, Tainan 70101, Taiwan (China); Chuang, Tzu-Chao [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Shih, Yi-Yu [Siemens Limited Healthcare Sector, Taipei 11503, Taiwan (China); Huang, Teng-Yi [Department of Electrical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)

    2013-12-15

    Purpose: One of the technical advantages of functional magnetic resonance imaging (fMRI) is its precise localization of changes from neuronal activities. While current practice of fMRI acquisition at voxel size around 3 × 3 × 3 mm{sup 3} achieves satisfactory results in studies of basic brain functions, higher spatial resolution is required in order to resolve finer cortical structures. This study investigated spatial resolution effects on brain fMRI experiments using balanced steady-state free precession (bSSFP) imaging with 0.37 mm{sup 3} voxel volume at 3.0 T. Methods: In fMRI experiments, full and unilateral visual field 5 Hz flashing checkerboard stimulations were given to healthy subjects. The bSSFP imaging experiments were performed at three different frequency offsets to widen the coverage, with functional activations in the primary visual cortex analyzed using the general linear model. Variations of the spatial resolution were achieved by removing outerk-space data components. Results: Results show that a reduction in voxel volume from 3.44 × 3.44 × 2 mm{sup 3} to 0.43 × 0.43 × 2 mm{sup 3} has resulted in an increase of the functional activation signals from (7.7 ± 1.7)% to (20.9 ± 2.0)% at 3.0 T, despite of the threefold SNR decreases in the original images, leading to nearly invariant functional contrast-to-noise ratios (fCNR) even at high spatial resolution. Activation signals aligning nicely with gray matter sulci at high spatial resolution would, on the other hand, have possibly been mistaken as noise at low spatial resolution. Conclusions: It is concluded that the bSSFP sequence is a plausible technique for fMRI investigations at submillimeter voxel widths without compromising fCNR. The reduction of partial volume averaging with nonactivated brain tissues to retain fCNR is uniquely suitable for high spatial resolution applications such as the resolving of columnar organization in the brain.

  16. Kilovoltage beam Monte Carlo dose calculations in submillimeter voxels for small animal radiotherapy.

    Science.gov (United States)

    Bazalova, Magdalena; Zhou, Hu; Keall, Paul J; Graves, Edward E

    2009-11-01

    Small animal conformal radiotherapy (RT) is essential for preclinical cancer research studies and therefore various microRT systems have been recently designed. The aim of this paper is to efficiently calculate the dose delivered using our microRT system based on a microCT scanner with the Monte Carlo (MC) method and to compare the MC calculations to film measurements. Doses from 2-30 mm diameter 120 kVp photon beams deposited in a solid water phantom with 0.2 x 0.2 x 0.2 mm3 voxels are calculated using the latest versions of the EGSnrc codes BEAMNRC and DOSXYZNRC. Two dose calculation approaches are studied: a two-step approach using phase-space files and direct dose calculation with BEAMNRC simulation sources. Due to the small beam size and submillimeter voxel size resulting in long calculation times, variance reduction techniques are studied. The optimum bremsstrahlung splitting number (NBRSPL in BEAMNRC) and the optimum DOSXYZNRC photon splitting (Nsplit) number are examined for both calculation approaches and various beam sizes. The dose calculation efficiencies and the required number of histories to achieve 1% statistical uncertainty--with no particle recycling--are evaluated for 2-30 mm beams. As a final step, film dose measurements are compared to MC calculated dose distributions. The optimum NBRSPL is approximately 1 x 10(6) for both dose calculation approaches. For the dose calculations with phase-space files, Nsplit varies only slightly for 2-30 mm beams and is established to be 300. Nsplit for the DOSXYZNRC calculation with the BEAMNRC source ranges from 300 for the 30 mm beam to 4000 for the 2 mm beam. The calculation time significantly increases for small beam sizes when the BEAMNRC simulation source is used compared to the simulations with phase-space files. For the 2 and 30 mm beams, the dose calculations with phase-space files are more efficient than the dose calculations with BEAMNRC sources by factors of 54 and 1.6, respectively. The dose

  17. A sub-millimeter resolution PET detector module using a multi-pixel photon counter array

    Science.gov (United States)

    Song, Tae Yong; Wu, Heyu; Komarov, Sergey; Siegel, Stefan B.; Tai, Yuan-Chuan

    2010-05-01

    A PET block detector module using an array of sub-millimeter lutetium oxyorthosilicate (LSO) crystals read out by an array of surface-mount, semiconductor photosensors has been developed. The detector consists of a LSO array, a custom acrylic light guide, a 3 × 3 multi-pixel photon counter (MPPC) array (S10362-11-050P, Hamamatsu Photonics, Japan) and a readout board with a charge division resistor network. The LSO array consists of 100 crystals, each measuring 0.8 × 0.8 × 3 mm3 and arranged in 0.86 mm pitches. A Monte Carlo simulation was used to aid the design and fabrication of a custom light guide to control distribution of scintillation light over the surface of the MPPC array. The output signals of the nine MPPC are multiplexed by a charge division resistor network to generate four position-encoded analog outputs. Flood image, energy resolution and timing resolution measurements were performed using standard NIM electronics. The linearity of the detector response was investigated using gamma-ray sources of different energies. The 10 × 10 array of 0.8 mm LSO crystals was clearly resolved in the flood image. The average energy resolution and standard deviation were 20.0% full-width at half-maximum (FWHM) and ±5.0%, respectively, at 511 keV. The timing resolution of a single MPPC coupled to a LSO crystal was found to be 857 ps FWHM, and the value for the central region of detector module was 1182 ps FWHM when ±10% energy window was applied. The nonlinear response of a single MPPC when used to read out a single LSO was observed among the corner crystals of the proposed detector module. However, the central region of the detector module exhibits significantly less nonlinearity (6.5% for 511 keV). These results demonstrate that (1) a charge-sharing resistor network can effectively multiplex MPPC signals and reduce the number of output signals without significantly degrading the performance of a PET detector and (2) a custom light guide to permit light sharing

  18. The Interstellar Medium in High-redshift Submillimeter Galaxies as Probed by Infrared Spectroscopy*

    Science.gov (United States)

    Wardlow, Julie L.; Cooray, Asantha; Osage, Willow; Bourne, Nathan; Clements, David; Dannerbauer, Helmut; Dunne, Loretta; Dye, Simon; Eales, Steve; Farrah, Duncan; Furlanetto, Cristina; Ibar, Edo; Ivison, Rob; Maddox, Steve; Michałowski, Michał M.; Riechers, Dominik; Rigopoulou, Dimitra; Scott, Douglas; Smith, Matthew W. L.; Wang, Lingyu; van der Werf, Paul; Valiante, Elisabetta; Valtchanov, Ivan; Verma, Aprajita

    2017-03-01

    Submillimeter galaxies (SMGs) at z≳ 1 are luminous in the far-infrared, and have star formation rates, SFR, of hundreds to thousands of solar masses per year. However, it is unclear whether they are true analogs of local ULIRGs or whether the mode of their star formation is more similar to that in local disk galaxies. We target these questions by using Herschel-PACS to examine the conditions in the interstellar medium (ISM) in far-infrared luminous SMGs at z˜ 1-4. We present 70-160 μm photometry and spectroscopy of the [O IV]26 μm, [Fe II]26 μm, [S III]33 μm, [Si II]34 μm, [O III]52 μm, [N III]57 μm, and [O I]63 μm fine-structure lines and the S(0) and S(1) hydrogen rotational lines in 13 lensed SMGs identified by their brightness in early Herschel data. Most of the 13 targets are not individually spectroscopically detected; we instead focus on stacking these spectra with observations of an additional 32 SMGs from the Herschel archive—representing a complete compilation of PACS spectroscopy of SMGs. We detect [O I]63 μm, [Si II]34 μm, and [N III]57 μm at ≥slant 3σ in the stacked spectra, determining that the average strengths of these lines relative to the far-IR continuum are (0.36+/- 0.12)× {10}-3, (0.84+/- 0.17)× {10}-3, and (0.27+/- 0.10)× {10}-3, respectively. Using the [O III]52 μm/[N III]57 μm emission line ratio, we show that SMGs have average gas-phase metallicities ≳ {Z}⊙ . By using PDR modeling and combining the new spectral measurements with integrated far-infrared fluxes and existing [C II]158 μm data, we show that SMGs have average gas densities, n, of ˜ {10}1-3 {{cm}}-3 and FUV field strengths, {G}0˜ {10}2.2-4.5 (in Habing units: 1.6× {10}-3 {erg} {{cm}}-2 {{{s}}}-1), consistent with both local ULIRGs and lower luminosity star-forming galaxies. Herschel is an ESA space observatory with science instruments provided by European-led Principal Investigator consortia, and important participation from NASA.

  19. Mapping the thermal structure and minor species of Venus mesosphere with ALMA submillimeter observations

    Science.gov (United States)

    Piccialli, A.; Moreno, R.; Encrenaz, T.; Fouchet, T.; Lellouch, E.; Widemann, T.

    2017-10-01

    Context. Water vapor and sulfur compounds are key species in the photochemistry of Venus mesosphere. These species, together with mesospheric temperatures, exhibit drastic temporal variations, both on short timescales (diurnal and day-to-day) as well on long timescales, far from being understood. Aims: We targeted CO, SO, HDO and SO2 transitions in the submillimeter range using the Atacama Large Millimeter Array (ALMA) to study their spatial and temporal variations. Methods: Four sets of observations were acquired on different dates in November 2011 during the first ALMA Early Science observation Cycle 0. Venus angular diameter was about 11'' with an illumination factor of 92%, so that mostly the day side of the planet was mapped. Assuming a nominal CO abundance profile, we retrieved vertical temperature profiles over the entire disk as a function of latitude and local time. Temperature profiles were later used to retrieve SO, SO2, and H2O. We used HDO as a tracer for water assuming a D/H enrichment of 200 times the terrestrial value. Results: We derived 3D maps of mesospheric temperatures in the altitude range 70-105 km. SO, SO2, and H2O are characterized by a negligible abundance below 85 km followed by an increase with altitude in the upper mesosphere. Disk-averaged SO abundances present a maximum mixing ratio of 15.0 ± 3.1 ppb on November 26 followed the next day by a minimum value of 9.9 ± 1.2 ppb. Due to a very low S/N, SO2 could only be derived from the disk-averaged spectrum on the first day of observation revealing an abundance of 16.5 ± 4.6 ppb. We found a SO2/SO ratio of 1.5 ± 0.4. Global maps of SO reveal strong variations both with latitude and local time and from day to day with abundance ranging from < 1 to 15 ppb. H2O disk-averages retrievals reveal a steady decrease from November 14 to 27, with the abundance varying from 3.6 ± 0.6 ppm on the first day to 2.9 ± 0.7 ppm on the last day. H2O maps reveal a slightly higher abundance on the evening

  20. CMOS front ends for millimeter wave wireless communication systems

    CERN Document Server

    Deferm, Noël

    2015-01-01

    This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.   Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips.  

  1. Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring.

    Science.gov (United States)

    Schwartz, Gregor; Tee, Benjamin C-K; Mei, Jianguo; Appleton, Anthony L; Kim, Do Hwan; Wang, Huiliang; Bao, Zhenan

    2013-01-01

    Flexible pressure sensors are essential parts of an electronic skin to allow future biomedical prostheses and robots to naturally interact with humans and the environment. Mobile biomonitoring in long-term medical diagnostics is another attractive application for these sensors. Here we report the fabrication of flexible pressure-sensitive organic thin film transistors with a maximum sensitivity of 8.4 kPa(-1), a fast response time of stability over >15,000 cycles and a low power consumption of devices in the subthreshold regime, where the capacitance change upon compression of the dielectric is strongly amplified. We demonstrate that our sensors can be used for non-invasive, high fidelity, continuous radial artery pulse wave monitoring, which may lead to the use of flexible pressure sensors in mobile health monitoring and remote diagnostics in cardiovascular medicine.

  2. Gravitation Waves

    CERN Multimedia

    CERN. Geneva

    2005-01-01

    We will present a brief introduction to the physics of gravitational waves and their properties. We will review potential astrophysical sources of gravitational waves, and the physics and astrophysics that can be learned from their study. We will survey the techniques and technologies for detecting gravitational waves for the first time, including bar detectors and broadband interferometers, and give a brief status report on the international search effort, with special emphasis on the LIGO detectors and search results.

  3. Janus Waves

    OpenAIRE

    Papazoglou, Dimitris G.; Fedorov, Vladimir Yu.; Tzortzakis, Stelios

    2016-01-01

    We show the existence of a family of waves that share a common interesting property affecting the way they propagate and focus. These waves are a superposition of twin waves, which are conjugate to each other under inversion of the propagation direction. In analogy to holography, these twin "real" and "virtual" waves are related respectively to the converging and the diverging part of the beam and can be clearly visualized in real space at two distinct foci under the action of a focusing lens...

  4. The ALMA Phasing System: A Beamforming Capability for Ultra-high-resolution Science at (Sub)Millimeter Wavelengths

    Science.gov (United States)

    Matthews, L. D.; Crew, G. B.; Doeleman, S. S.; Lacasse, R.; Saez, A. F.; Alef, W.; Akiyama, K.; Amestica, R.; Anderson, J. M.; Barkats, D. A.; Baudry, A.; Broguière, D.; Escoffier, R.; Fish, V. L.; Greenberg, J.; Hecht, M. H.; Hiriart, R.; Hirota, A.; Honma, M.; Ho, P. T. P.; Impellizzeri, C. M. V.; Inoue, M.; Kohno, Y.; Lopez, B.; Martí-Vidal, I.; Messias, H.; Meyer-Zhao, Z.; Mora-Klein, M.; Nagar, N. M.; Nishioka, H.; Oyama, T.; Pankratius, V.; Perez, J.; Phillips, N.; Pradel, N.; Rottmann, H.; Roy, A. L.; Ruszczyk, C. A.; Shillue, B.; Suzuki, S.; Treacy, R.

    2018-01-01

    The Atacama Millimeter/submillimeter Array (ALMA) Phasing Project (APP) has developed and deployed the hardware and software necessary to coherently sum the signals of individual ALMA antennas and record the aggregate sum in Very Long Baseline Interferometry (VLBI) Data Exchange Format. These beamforming capabilities allow the ALMA array to collectively function as the equivalent of a single large aperture and participate in global VLBI arrays. The inclusion of phased ALMA in current VLBI networks operating at (sub)millimeter wavelengths provides an order of magnitude improvement in sensitivity, as well as enhancements in u–v coverage and north–south angular resolution. The availability of a phased ALMA enables a wide range of new ultra-high angular resolution science applications, including the resolution of supermassive black holes on event horizon scales and studies of the launch and collimation of astrophysical jets. It also provides a high-sensitivity aperture that may be used for investigations such as pulsar searches at high frequencies. This paper provides an overview of the ALMA Phasing System design, implementation, and performance characteristics.

  5. MEASURING MASS ACCRETION RATE ONTO THE SUPERMASSIVE BLACK HOLE IN M87 USING FARADAY ROTATION MEASURE WITH THE SUBMILLIMETER ARRAY

    Energy Technology Data Exchange (ETDEWEB)

    Kuo, C. Y.; Asada, K.; Rao, R.; Nakamura, M.; Algaba, J. C.; Liu, H. B.; Inoue, M.; Koch, P. M.; Ho, P. T. P.; Matsushita, S.; Pu, H.-Y.; Nishioka, H.; Pradel, N. [Academia Sinica, Institute of Astronomy and Astrophysics, P.O. Box 23-141, Taipei 10617, Taiwan (China); Akiyama, K. [National Astronomical Observatory of Japan, Osawa 2-21-1, Mitaka, Tokyo 181-8588 (Japan)

    2014-03-10

    We present the first constraint on the Faraday rotation measure (RM) at submillimeter wavelengths for the nucleus of M87. By fitting the polarization position angles (χ) observed with the Submillimeter Array at four independent frequencies around ∼230 GHz and interpreting the change in χ as a result of external Faraday rotation associated with accretion flow, we determine the RM of the M87 core to be between –7.5 × 10{sup 5} and 3.4 × 10{sup 5} rad m{sup –2}. Assuming a density profile of the accretion flow that follows a power-law distribution and a magnetic field that is ordered, radial, and has equipartition strength, the limit on the RM constrains the mass accretion rate M-dot to be below 9.2 × 10{sup –4} M {sub ☉} yr{sup –1} at a distance of 21 Schwarzschild radii from the central black hole. This value is at least two orders of magnitude smaller than the Bondi accretion rate, suggesting significant suppression of the accretion rate in the inner region of the accretion flow. Consequently, our result disfavors the classical advection-dominated accretion flow and prefers the adiabatic inflow-outflow solution or convection-dominated accretion flow for the hot accretion flow in M87.

  6. LUPUS I observations from the 2010 flight of the Balloon-borne large aperture submillimeter telescope for polarimetry

    Energy Technology Data Exchange (ETDEWEB)

    Matthews, Tristan G.; Chapman, Nicholas L.; Novak, Giles [Center for Interdisciplinary Exploration and Research in Astrophysics (CIERA) and Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (United States); Ade, Peter A. R.; Hargrave, Peter C.; Nutter, David [Cardiff University, School of Physics and Astronomy, Queens Buildings, The Parade, Cardiff, CF24 3AA (United Kingdom); Angilè, Francesco E.; Devlin, Mark J.; Klein, Jeffrey [Department of Physics and Astronomy, University of Pennsylvania, 209 South 33rd Street, Philadelphia, PA 19104 (United States); Benton, Steven J.; Fissel, Laura M.; Gandilo, Natalie N.; Netterfield, Calvin B. [Department of Astronomy and Astrophysics, University of Toronto, 50 St. George Street Toronto, ON M5S 3H4 (Canada); Chapin, Edward L. [XMM SOC, ESAC, Apartado 78, E-28691 Villanueva de la Cañada, Madrid (Spain); Fukui, Yasuo [Department of Physics, Nagoya University, Nagoya 464-8602 (Japan); Gundersen, Joshua O. [Department of Physics, University of Miami, 1320 Campo Sano Drive, Coral Gables, FL 33146 (United States); Korotkov, Andrei L. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Moncelsi, Lorenzo; Mroczkowski, Tony K. [California Institute of Technology, 1200 East California Boulevard, Pasadena, CA 91125 (United States); Olmi, Luca [University of Puerto Rico, Rio Piedras Campus, Physics Department, Box 23343, UPR station, San Juan (Puerto Rico); and others

    2014-04-01

    The Balloon-borne Large Aperture Submillimeter Telescope for Polarimetry (BLASTPol) was created by adding polarimetric capability to the BLAST experiment that was flown in 2003, 2005, and 2006. BLASTPol inherited BLAST's 1.8 m primary and its Herschel/SPIRE heritage focal plane that allows simultaneous observation at 250, 350, and 500 μm. We flew BLASTPol in 2010 and again in 2012. Both were long duration Antarctic flights. Here we present polarimetry of the nearby filamentary dark cloud Lupus I obtained during the 2010 flight. Despite limitations imposed by the effects of a damaged optical component, we were able to clearly detect submillimeter polarization on degree scales. We compare the resulting BLASTPol magnetic field map with a similar map made via optical polarimetry. (The optical data were published in 1998 by J. Rizzo and collaborators.) The two maps partially overlap and are reasonably consistent with one another. We compare these magnetic field maps to the orientations of filaments in Lupus I, and we find that the dominant filament in the cloud is approximately perpendicular to the large-scale field, while secondary filaments appear to run parallel to the magnetic fields in their vicinities. This is similar to what is observed in Serpens South via near-IR polarimetry, and consistent with what is seen in MHD simulations by F. Nakamura and Z. Li.

  7. Solar Science with the Atacama Large Millimeter/Submillimeter Array—A New View of Our Sun

    Science.gov (United States)

    Wedemeyer, S.; Bastian, T.; Brajša, R.; Hudson, H.; Fleishman, G.; Loukitcheva, M.; Fleck, B.; Kontar, E. P.; De Pontieu, B.; Yagoubov, P.; Tiwari, S. K.; Soler, R.; Black, J. H.; Antolin, P.; Scullion, E.; Gunár, S.; Labrosse, N.; Ludwig, H.-G.; Benz, A. O.; White, S. M.; Hauschildt, P.; Doyle, J. G.; Nakariakov, V. M.; Ayres, T.; Heinzel, P.; Karlicky, M.; Van Doorsselaere, T.; Gary, D.; Alissandrakis, C. E.; Nindos, A.; Solanki, S. K.; Rouppe van der Voort, L.; Shimojo, M.; Kato, Y.; Zaqarashvili, T.; Perez, E.; Selhorst, C. L.; Barta, M.

    2016-04-01

    The Atacama Large Millimeter/submillimeter Array (ALMA) is a new powerful tool for observing the Sun at high spatial, temporal, and spectral resolution. These capabilities can address a broad range of fundamental scientific questions in solar physics. The radiation observed by ALMA originates mostly from the chromosphere—a complex and dynamic region between the photosphere and corona, which plays a crucial role in the transport of energy and matter and, ultimately, the heating of the outer layers of the solar atmosphere. Based on first solar test observations, strategies for regular solar campaigns are currently being developed. State-of-the-art numerical simulations of the solar atmosphere and modeling of instrumental effects can help constrain and optimize future observing modes for ALMA. Here we present a short technical description of ALMA and an overview of past efforts and future possibilities for solar observations at submillimeter and millimeter wavelengths. In addition, selected numerical simulations and observations at other wavelengths demonstrate ALMA's scientific potential for studying the Sun for a large range of science cases.

  8. Development of Leaky Wave Antennas for Layered Ridge Dielectric Waveguide

    Science.gov (United States)

    Ponchak, George E.; Katehi, Linda P. B.

    1993-01-01

    The millimeter wave, especially above 100 GHz, and the submillimeter wave frequency spectrum offers the possibility for narrow-beam, high-resolution antennas which are critical for high definition radars required for space debris tracking, airport ground avoidance radars, and missile tracking. In addition, the frequency which most atmospheric constituents may be detected lie in this part of the frequency spectrum. Therefore, the development of electronic components for millimeter/submillimeter wave passive sensors is required for environmental monitoring of the Earth's atmosphere. Typical microwave transmission lines such as microstrip and coplanar waveguide rely on two or more electrical conductors to concentrate and guide the electromagnetic energy. Unfortunately, the surface resistance of the conductors increases as the square root of frequency. In addition, the circuit dimensions must be decreased with increasing frequency to maintain a single mode transmission line which further increases the conductor loss. An alternative family of transmission lines are formed from two or more insulating materials and rely on the differences in the permittivities between the two materials to guide the wave. No metal conductors are required although some dielectric waveguides do utilize a metallic ground plane to facilitate the interconnections of active electrical elements or to reduce the transmission line size. Examples of such transmission lines are image guides, insulated image guides, trapped image guides, ridge guide, and layered ridge dielectric waveguide (LRDW). Although most dielectric waveguides have dimensions on the order of lambda to provide sufficient field confinement, the LRDW has been shown to provide good field confinement for electrically small lines. This offers an advantage in circuit integration. It has been shown that a periodic array of metallic strips placed either along or on top of a dielectric waveguide forms an effective radiator. This antenna is

  9. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.

    Science.gov (United States)

    Chen, Lin; Cai, Fuxi; Otuonye, Ugo; Lu, Wei D

    2016-01-13

    Vertical junctionless transistors with a gate-all-around (GAA) structure based on Ge/Si core/shell nanowires epitaxially grown and integrated on a ⟨111⟩ Si substrate were fabricated and analyzed. Because of efficient gate coupling in the nanowire-GAA transistor structure and the high density one-dimensional hole gas formed in the Ge nanowire core, excellent P-type transistor behaviors with Ion of 750 μA/μm were obtained at a moderate gate length of 544 nm with minimal short-channel effects. The experimental data can be quantitatively modeled by a GAA junctionless transistor model with few fitting parameters, suggesting the nanowire transistors can be fabricated reliably without introducing additional factors that can degrade device performance. Devices with different gate lengths were readily obtained by tuning the thickness of an etching mask film. Analysis of the histogram of different devices yielded a single dominate peak in device parameter distribution, indicating excellent uniformity and high confidence of single nanowire operation. Using two vertical nanowire junctionless transistors, a PMOS-logic inverter with near rail-to-rail output voltage was demonstrated, and device matching in the logic can be conveniently obtained by controlling the number of nanowires employed in different devices rather than modifying device geometry. These studies show that junctionless transistors based on vertical Ge/Si core/shell nanowires can be fabricated in a controlled fashion with excellent performance and may be used in future hybrid, high-performance circuits where bottom-up grown nanowire devices with different functionalities can be directly integrated with an existing Si platform.

  10. Rossby Waves

    OpenAIRE

    2005-01-01

    tut quiz Tutorial Quiz Interactive Media Element This interactive tutorial reviews the mechanisms of Rossby waves. Rossby waves in both the northern and southern hemispheres are considered. The interactions involve answering simple fill-in-the-blank questions. Diagrams are used to illustrate some of the concepts reviewed. MR4322 Dynamic Meteorology

  11. Wave Dragon

    DEFF Research Database (Denmark)

    Tedd, James; Kofoed, Jens Peter; Friis-Madsen, Erik

    2008-01-01

    Since March 2003 a prototype of Wave Dragon has been tested in an inland sea in Denmark. This has been a great success with all subsystems tested and improved through working in an offshore environment. The project has proved the Wave Dragon device and has enabled the next stage, a production sized...

  12. Wave Star

    DEFF Research Database (Denmark)

    Kramer, Morten; Brorsen, Michael; Frigaard, Peter

    Nærværende rapport beskriver numeriske beregninger af den hydrodynamiske interaktion mellem 5 flydere i bølgeenergianlægget Wave Star.......Nærværende rapport beskriver numeriske beregninger af den hydrodynamiske interaktion mellem 5 flydere i bølgeenergianlægget Wave Star....

  13. Wave Solutions

    CERN Document Server

    Christov, Ivan C

    2012-01-01

    In classical continuum physics, a wave is a mechanical disturbance. Whether the disturbance is stationary or traveling and whether it is caused by the motion of atoms and molecules or the vibration of a lattice structure, a wave can be understood as a specific type of solution of an appropriate mathematical equation modeling the underlying physics. Typical models consist of partial differential equations that exhibit certain general properties, e.g., hyperbolicity. This, in turn, leads to the possibility of wave solutions. Various analytical techniques (integral transforms, complex variables, reduction to ordinary differential equations, etc.) are available to find wave solutions of linear partial differential equations. Furthermore, linear hyperbolic equations with higher-order derivatives provide the mathematical underpinning of the phenomenon of dispersion, i.e., the dependence of a wave's phase speed on its wavenumber. For systems of nonlinear first-order hyperbolic equations, there also exists a general ...

  14. Advanced insulated gate bipolar transistor gate drive

    Science.gov (United States)

    Short, James Evans [Monongahela, PA; West, Shawn Michael [West Mifflin, PA; Fabean, Robert J [Donora, PA

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  15. Two-dimensional bipolar junction transistors

    Science.gov (United States)

    Gharekhanlou, Behnaz; Khorasani, Sina; Sarvari, Reza

    2014-03-01

    Recent development in fabrication technology of planar two-dimensional (2D) materials has introduced the possibility of numerous novel applications. Our recent analysis has revealed that by definition of p-n junctions through appropriate patterned doping of 2D semiconductors, ideal exponential I-V characteristics may be expected. However, the theory of 2D junctions turns out to be very different to that of standard bulk junctions. Based on this theory of 2D diodes, we construct for the first time a model to describe 2D bipolar junction transistors (2D-BJTs). We derive the small-signal equivalent model, and estimate the performance of a 2D-BJT device based on graphone as the example material. A current gain of about 138 and maximum threshold frequency of 77 GHz, together with a power-delay product of only 4 fJ per 1 μm lateral width is expected at an operating voltage of 5 V. In addition, we derive the necessary formulae and a new approximate solution for the continuity equation in the 2D configuration, which have been verified against numerical solutions.

  16. Contact effects in graphene nanoribbon transistors.

    Science.gov (United States)

    Liang, Gengchiau; Neophytou, Neophytos; Lundstrom, Mark S; Nikonov, Dmitri E

    2008-07-01

    The effects of the various contact types and shapes on the performance of Schottky barrier graphene nanoribbon field-effect-transistors (GNRFETs) have been investigated using a real-space quantum transport simulator based on the NEGF approach self-consistently coupled to a three-dimensional Poisson solver for treating the electrostatics. The device channel considered is a double gate semiconducting armchair nanoribbon. The types of contacts considered are (a) a semi-infinite normal metal, (b) a semi-infinite graphene sheet, (c) finite size rectangular shape armchair graphene contacts, (d) finite size wedge shape graphene contacts, and (e) zigzag graphene nanoribbon contacts. Among these different contact types, the semi-infinite graphene sheet contacts show the worst performance because of their very low density of states around the Dirac point resulting in low transmission possibility through the Schottky barrier, both at ON and OFF states. Although all other types of contacts can have significant enhancement in I ON to I OFF ratio, the zigzag GNR contacts show promising and size invariant performance due to the metallic properties.

  17. Comparison between Field Effect Transistors and Bipolar Junction Transistors as Transducers in Electrochemical Sensors

    Science.gov (United States)

    Zafar, Sufi; Lu, Minhua; Jagtiani, Ashish

    2017-01-01

    Field effect transistors (FET) have been widely used as transducers in electrochemical sensors for over 40 years. In this report, a FET transducer is compared with the recently proposed bipolar junction transistor (BJT) transducer. Measurements are performed on two chloride electrochemical sensors that are identical in all details except for the transducer device type. Comparative measurements show that the transducer choice significantly impacts the electrochemical sensor characteristics. Signal to noise ratio is 20 to 2 times greater for the BJT sensor. Sensitivity is also enhanced: BJT sensing signal changes by 10 times per pCl, whereas the FET signal changes by 8 or less times. Also, sensor calibration curves are impacted by the transducer choice. Unlike a FET sensor, the calibration curve of the BJT sensor is independent of applied voltages. Hence, a BJT sensor can make quantitative sensing measurements with minimal calibration requirements, an important characteristic for mobile sensing applications. As a demonstration for mobile applications, these BJT sensors are further investigated by measuring chloride levels in artificial human sweat for potential cystic fibrosis diagnostic use. In summary, the BJT device is demonstrated to be a superior transducer in comparison to a FET in an electrochemical sensor.

  18. Thin Film Silicon-On-Insulator of Bipolar Junction Transistor: Process Fabrication and characterization Technology

    OpenAIRE

    Osama S Hammad; Othman Sidek; Kamarul Azizi Ibrahim

    2010-01-01

    The great success of semiconductor industry has been driven by the advancement in transistor technology in its early era. The industry could improve the performance of their products by shrinking the transistor dimensions and integrating more transistors. However, this strategy is becoming less effective, as the transistors demandedsubstantial interconnections between them, and the speed of integrated circuit products are being dominated by interconnections. Innovations are necessary in the i...

  19. Electromechanical field effect transistors based on multilayer phosphorene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Z.T., E-mail: jiangzhaotan@hotmail.com; Lv, Z.T.; Zhang, X.D.

    2017-06-21

    Based on the tight-binding Hamiltonian approach, we demonstrate that the electromechanical field effect transistors (FETs) can be realized by using the multilayer phosphorene nanoribbons (PNRs). The synergistic combination of the electric field and the external strains can establish the on–off switching since the electric field can shift or split the energy band, and the mechanical strains can widen or narrow the band widths. This kind of multilayer PNR FETs, much solider than the monolayer PNR one and more easily biased by different electric fields, has more transport channels consequently leading to the higher on–off current ratio or the higher sensitivity to the electric fields. Meanwhile, the strain-induced band-flattening will be beneficial for improving the flexibility in designing the electromechanical FETs. In addition, such electromechanical FETs can act as strain-controlled FETs or mechanical detectors for detecting the strains, indicating their potential applications in nano- and micro-electromechanical fields. - Highlights: • Electromechanical transistors are designed with multilayer phosphorene nanoribbons. • Electromechanical synergistic effect can establish the on–off switching more flexibly. • Multilayer transistors, solider and more easily biased, has more transport channels. • Electromechanical transistors can act as strain-controlled transistors or mechanical detectors.

  20. SUB-MILLIMETER TELESCOPE CO (2-1) OBSERVATIONS OF NEARBY STAR-FORMING GALAXIES

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xue-Jian; Gu, Qiusheng [School of Astronomy and Space Science, Nanjing University, Nanjing 210093 (China); Wang, Zhong [Harvard-Smithsonian Center for Astrophysics, MS 66, 60 Garden Street, Cambridge, MA 02138 (United States); Wang, Junzhi [Shanghai Astronomical Observatory, Chinese Academy of Sciences, 80 Nandan Road, Shanghai 200030 (China); Zhang, Zhi-Yu, E-mail: xjjiang@nju.edu.cn [The UK Astronomy Technology Centre, Royal Observatory Edinburgh, Blackford Hill, Edinburgh, EH9 3HJ (United Kingdom)

    2015-01-20

    We present CO J = 2-1 observations toward 32 nearby gas-rich star-forming galaxies selected from the ALFALFA and Wide-field Infrared Survey Explorer (WISE) catalogs, using the Sub-millimeter Telescope (SMT). Our sample is selected to be dominated by intermediate-M {sub *} galaxies. The scaling relations between molecular gas, atomic gas, and galactic properties (stellar mass, NUV – r, and WISE color W3 – W2) are examined and discussed. Our results show the following. (1) In the galaxies with stellar mass M {sub *} ≤10{sup 10} M {sub ☉}, the H I fraction (f {sub H} {sub I} ≡ M {sub H} {sub I}/M {sub *}) is significantly higher than that of more massive galaxies, while the H{sub 2} gas fraction (f{sub H{sub 2}} ≡ M{sub H{sub 2}}/M {sub *}) remains nearly unchanged. (2) Compared to f{sub H{sub 2}}, f {sub H} {sub I} correlates better with both M {sub *} and NUV – r. (3) A new parameter, WISE color W3 – W2 (12-4.6 μm), is introduced, which is similar to NUV – r in tracing star formation activity, and we find that W3 – W2 has a tighter anti-correlation with log f{sub H{sub 2}} than the anti-correlation of (NUV – r)-f {sub H} {sub I}, (NUV – r)-f{sub H{sub 2}}, and (W3 – W2)-f {sub H} {sub I}. This indicates that W3 – W2 can trace the H{sub 2} fraction in galaxies. For the gas ratio M{sub H{sub 2}}/M {sub H} {sub I} , only in the intermediate-M {sub *} galaxies it appears to depend on M {sub *} and NUV – r. We find a tight correlation between the molecular gas mass M{sub H{sub 2}} and 12 μm (W3) luminosities (L {sub 12} {sub μm}), and the slope is close to unity (1.03 ± 0.06) for the SMT sample. This correlation may reflect that the cold gas and dust are well mixed on a global galactic scale. Using the all-sky 12 μm (W3) data available in WISE, this correlation can be used to estimate CO flux for molecular gas observations and can even predict H{sub 2} mass for star-forming galaxies.

  1. Simulation study for the Stratospheric Inferred Wind (SIW) sub-millimeter limb sounder

    Science.gov (United States)

    Baron, Philippe; Murtagh, Donal; Eriksson, Patrick; Ochiai, Satoshi

    2017-04-01

    -and-aac-microtec-to-develop-the-innosat-platform-and-implement-its-first-mission-named-mats.html [2] Wu D., et al.: Mesospheric Doppler wind measurements from Aura Microwave Limb Sounder (MLS), Advanced in Space Research, 42, 1246-1252, 2008 [3] Baron P., et al.: Observation of horizontal winds in the middle-atmosphere between 30S and 55N during the northern winter 2009-2010, Atmospheric Chemistry and Physics 13(13), 6049-6064, 2013, doi:10.5194/acp-13-6049-2013 [4] Baron P., et al.: Definition of an uncooled submillimeter/terahertz limb sounder for measuring middle atmospheric winds, Proceedings of ESA Living Planet Symposium, Edinburgh, UK, 9-13 September 2013, (ESA SP-722, December 2013)

  2. Ambipolar Organic Tri-Gate Transistor for Low-Power Complementary Electronics

    NARCIS (Netherlands)

    Torricelli, F.; Ghittorelli, M.; Smits, E.C.P.; Roelofs, C.W.S.; Janssen, R.A.J.; Gelinck, G.H.; Kovács-Vajna, Z.M.; Cantatore, E.

    2016-01-01

    Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics

  3. Submillimeter H2O and H2O+emission in lensed ultra- and hyper-luminous infrared galaxies at z 2-4

    NARCIS (Netherlands)

    Yang, C.; Omont, A.; Beelen, A.; González-Alfonso, E.; Neri, R.; Gao, Y.; van der Werf, P.; Weiß, A.; Gavazzi, R.; Falstad, N.; Baker, A. J.; Bussmann, R. S.; Cooray, A.; Cox, P.; Dannerbauer, H.; Dye, S.; Guélin, M.; Ivison, R.; Krips, M.; Lehnert, M.; Michałowski, M. J.; Riechers, D. A.; Spaans, M.; Valiante, E.

    2016-01-01

    We report rest-frame submillimeter H2O emission line observations of 11 ultra- or hyper-luminous infrared galaxies (ULIRGs or HyLIRGs) at z 2-4 selected among the brightest lensed galaxies discovered in the Herschel-Astrophysical Terahertz Large Area Survey (H-ATLAS). Using the IRAM NOrthern

  4. THE SCUBA-2 COSMOLOGY LEGACY SURVEY: MULTIWAVELENGTH COUNTERPARTS TO 10{sup 3} SUBMILLIMETER GALAXIES IN THE UKIDSS-UDS FIELD

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Chian-Chou; Smail, Ian; Ma, Cheng-Jiun; Simpson, James M.; Swinbank, A. Mark [Centre for Extragalactic Astronomy, Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Ivison, Rob J.; Arumugam, Vinodiran; Mortlock, Alice; Dunlop, James S.; Michałowski, Michał J. [Institute for Astronomy, University of Edinburgh, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Almaini, Omar; Conselice, Christopher J.; Hartley, Will G. [University of Nottingham, School of Physics and Astronomy, Nottingham, NG7 2RD (United Kingdom); Geach, James E. [Center for Astrophysics Research, Science and Technology Research Institute, University of Hertfordshire, Hatfield AL10 9AB (United Kingdom); Simpson, Chris [Astrophysics Research Institute, Liverpool John Moores University, Liverpool Science Park, 146 Brownlow Hill, Liverpool L3 5RF (United Kingdom); Aretxaga, Itziar [Instituto Nacional de Astrofísica, Óptica y Electrónica (INAOE), Luis Enrique Erro 1, Sta. Ma. Tonantzintla, Puebla (Mexico); Blain, Andrew [Physics and Astronomy, University of Leicester, Leicester, LE1 7RH (United Kingdom); Chapman, Scott C. [Department of Physics and Atmospheric Science, Dalhousie University, 6310 Coburg Road, Halifax, NS B3H 4R2 (Canada); Farrah, Duncan [Department of Physics, Virginia Tech, Blacksburg, VA 24061 (United States); Halpern, Mark [Department of Physics and Astronomy, University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1 (Canada); and others

    2016-04-01

    We present multiwavelength identifications for the counterparts of 1088 submillimeter sources detected at 850 μm in the SCUBA-2 Cosmology Legacy Survey study of the UKIRT Infrared Deep Sky Survey-Ultra-Deep Survey (UDS) field. By utilizing an Atacama Large Millimeter Array (ALMA) pilot study on a subset of our bright SCUBA-2 sample as a training set, along with the deep optical–near-infrared (OIR) data available in this field, we develop a novel technique, Optical–IR Triple Color (OIRTC), using z − K, K − [3.6], [3.6] − [4.5] colors to select the candidate submillimeter galaxy (SMG) counterparts. By combining radio identification and the OIRTC technique, we find counterpart candidates for 80% of the Class = 1 ≥ 4σ SCUBA-2 sample, defined as those that are covered by both radio and OIR imaging and the base sample for our scientific analyses. Based on the ALMA training set, we expect the accuracy of these identifications to be 82% ± 20%, with a completeness of 69% ± 16%, essentially as accurate as the traditional p-value technique but with higher completeness. We find that the fraction of SCUBA-2 sources having candidate counterparts is lower for fainter 850 μm sources, and we argue that for follow-up observations sensitive to SMGs with S{sub 850} ≳ 1 mJy across the whole ALMA beam, the fraction with multiple counterparts is likely to be >40% for SCUBA-2 sources at S{sub 850} ≳ 4 mJy. We find that the photometric redshift distribution for the SMGs is well fit by a lognormal distribution, with a median redshift of z = 2.3 ± 0.1. After accounting for the sources without any radio and/or OIRTC counterpart, we estimate the median redshift to be z = 2.6 ± 0.1 for SMGs with S{sub 850} > 1 mJy. We also use this new large sample to study the clustering of SMGs and the far-infrared properties of the unidentified submillimeter sources by stacking their Herschel SPIRE far-infrared emission.

  5. A quasioptical steering system for the CCAT/XSPEC submillimeter multi-object spectrometer

    OpenAIRE

    Chapman, S.C.; Tikhomirov, A.; Bradford, C.M.; Hailey-Dunsheath, S.

    2014-01-01

    A two arm, opto-mechanical positioner mechanism is presented in this proceedings as a candidate steering system for the millimeter-wave XSPEC spectrograph. The design is well matched to the expected target density on the sky, and meeting all requirements of the Cerro Chajnantor Atacama Telescope (CCAT), site environmental conditions (e.g., operating temperature and power dissipation), and the positioning requirements themselves for acquiring and tracking astronomical objects whose light is fe...

  6. Modeling and PSPICE simulation of NBTI effects in VDMOS transistors

    Directory of Open Access Journals (Sweden)

    Marjanović Miloš

    2015-01-01

    Full Text Available In this paper the results of modeling and simulation of NBTI effects in p-channel power VDMOS transistor have been presented. Based on the experimental results, the threshold voltage shifts and changes of transconductance during the NBT stress have been modeled and implemented in the PSPICE model of the IRF9520 transistor. By predefining the threshold voltage value before the NBT stress, and by assigning the stress time, transfer characteristics of the transistor are simulated. These characteristics are within (1.33÷11.25% limits in respect to the measured ones, which represents a good agreement. [Projekat Ministarstva nauke Republike Srbije, br. OI 171026 i br. TR 32026

  7. Fully printed metabolite sensor using organic electrochemical transistor

    Science.gov (United States)

    Scheiblin, Gaëtan; Aliane, Abdelkader; Coppard, Romain; Owens, Róisín. M.; Mailley, Pascal; Malliaras, George G.

    2015-08-01

    As conducting polymer based devices, organic electrochemical transistors (OECTs) are suited for printing process. The convenience of the screen-printing techniques allowed us to design and fabricate OECTs with a selected design and using different gate material. Depending on the material used, we were able to tune the transistor for different biological application. Ag/AgCl gate provided transistor with good transconductance, and electrochemical sensitivity to pH was provided by polyaniline ink. Finally, we validate the enzymatic sensing of glucose and lactate with a Poly(3,4-ethylene dioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) gate often used due to its biocompatible properties. The screen-printing process allowed us to fabricate a large amount of devices in a short period of time, using only commercially available grades of ink, showing by this way the possible transfer to industrial purpose.

  8. Fabrication of organic electrochemical transistor arrays for biosensing.

    Science.gov (United States)

    Zhang, Meng; Lin, Peng; Yang, Mo; Yan, Feng

    2013-09-01

    Organic electrochemical transistors (OECT) have been used as various types of biosensors with very high sensitivity. The OECTs show advantages of easy fabrication, low operational voltage, excellent flexibility and biocompatibility. OECT arrays based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) were fabricated in poly(ethylene glycol) (PEG) microwells by physical delamination. The OECTs show fast response time, stable channel current and excellent transistor characteristics. The PEG microwells can be used to trap cells on top of the OECTs, which will be important for the application of the OECT arrays as cell-based biosensors. This technique provides a feasible way for high-throughput cell analysis based on transistor arrays. This article is part of a Special Issue entitled Organic Bioelectronics-Novel Applications in Biomedicine. Copyright © 2012 Elsevier B.V. All rights reserved.

  9. Vertically aligned carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi

    2012-10-01

    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.

  10. Molecular gating of transistors by amine-terminated layers

    Energy Technology Data Exchange (ETDEWEB)

    Shaya, O.; Amit, I.; Einati, H. [School of Electrical Engineering, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv, 69978 (Israel); Burstein, L. [Wolfson Applied Materials Research Center, Tel-Aviv University, Ramat-Aviv, 69978 (Israel); Shacham-Diamand, Y. [School of Electrical Engineering, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv, 69978 (Israel); Rosenwaks, Y., E-mail: yossir@eng.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv, 69978 (Israel)

    2012-02-01

    Self-assembly of amine-terminated layers on a transistor gate dielectric leads to gating of the transistor even without the use of a reference electrode or any voltage drop across the organic layer. This effect was studied using in situ electrical measurements, Kelvin probe force microscopy and X-ray photoelectron spectroscopy of (3-aminopropyl)-trimethoxysilane (APTMS) gated transistors. Current-voltage characteristics measured during the self-assembly process showed that the gating occurs only following exposure of the device to ambient humidity. X-ray photoelectron spectroscopy measurements of the layers showed a high percentage of protonated amine groups on the surface. Therefore, it is concluded that the charging of the amine group due to protonation under ambient conditions is the cause for the molecular-gating.

  11. Low-frequency noise in single electron tunneling transistor

    DEFF Research Database (Denmark)

    Tavkhelidze, A.N.; Mygind, Jesper

    1998-01-01

    The noise in current biased aluminium single electron tunneling (SET) transistors has been investigated in the frequency range of 5 mHz electromagnetic radiation and especially high energy...... of order seconds. In some cases, the positive and negative slopes of the V(Vg) curve have different overlaid noise patterns. For fixed bias on both slopes, we measure the same noise spectrum, and believe that the asymmetric noise is due to dynamic charge trapping near or inside one of the junctions induced...... when ramping the junction voltage. Dynamic trapping may limit the high frequency applications of the SET transistor. Also reported on are the effects of rf irradiation and the dependence of the SET transistor noise on bias voltage. ©1998 American Institute of Physics....

  12. Liquid-state field-effect transistors using electrowetting

    Science.gov (United States)

    Kim, D. Y.; Steckl, A. J.

    2007-01-01

    The authors report the demonstration of transistor action in the liquid state. The control of current flow in a liquid field-effect transistor (LiquiFET) was achieved by electrowetting between competitive insulating/conducting fluids. The LiquiFET structure included dielectric/hydrophobic layers, source/drain regions, a gate electrode, and hydrophilic/hydrophobic grids to contain the liquids. For a 400μm long channel, turn-on occurs at 2.5-3V drain voltage. On/off current ratios >10000:1 were measured. Linear gate voltage control over drain current was obtained with a transconductance up to 40nS. A calculated channel mobility of ˜1cm2/Vs indicates that electronic charge transport dominates transistor operation.

  13. Nanowire transistors physics of devices and materials in one dimension

    CERN Document Server

    Colinge, Jean-Pierre

    2016-01-01

    From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in ...

  14. Organic thin-film transistors for chemical and biological sensing.

    Science.gov (United States)

    Lin, Peng; Yan, Feng

    2012-01-03

    Organic thin-film transistors (OTFTs) show promising applications in various chemical and biological sensors. The advantages of OTFT-based sensors include high sensitivity, low cost, easy fabrication, flexibility and biocompatibility. In this paper, we review the chemical sensors and biosensors based on two types of OTFTs, including organic field-effect transistors (OFETs) and organic electrochemical transistors (OECTs), mainly focusing on the papers published in the past 10 years. Various types of OTFT-based sensors, including pH, ion, glucose, DNA, enzyme, antibody-antigen, cell-based sensors, dopamine sensor, etc., are classified and described in the paper in sequence. The sensing mechanisms and the detection limits of the devices are described in details. It is expected that OTFTs may have more important applications in chemical and biological sensing with the development of organic electronics. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. DUST AND GAS IN THE MAGELLANIC CLOUDS FROM THE HERITAGE HERSCHEL KEY PROJECT. I. DUST PROPERTIES AND INSIGHTS INTO THE ORIGIN OF THE SUBMILLIMETER EXCESS EMISSION

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, Karl D.; Roman-Duval, Julia; Meixner, Margaret [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Bot, Caroline [Observatoire astronomique de Strasbourg, Université de Strasbourg, CNRS, UMR 7550, 11 rue de l Université, F-67000 Strasbourg (France); Babler, Brian [Department of Astronomy, 475 North Charter Street, University of Wisconsin, Madison, WI 53706 (United States); Bernard, Jean-Philippe [CESR, Université de Toulouse, UPS, 9 Avenue du Colonel Roche, F-31028 Toulouse, Cedex 4 (France); Bolatto, Alberto; Jameson, Katherine [Department of Astronomy, Lab for Millimeter-wave Astronomy, University of Maryland, College Park, MD 20742-2421 (United States); Boyer, Martha L. [Observational Cosmology Lab, Code 665, NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Clayton, Geoffrey C. [Department of Physics and Astronomy, Louisiana State University, 233-A Nicholson Hall, Tower Drive, Baton Rouge, LA 70803 (United States); Engelbracht, Charles [Steward Observatory, University of Arizona, 933 North Cherry Avenue, Tucson, AZ 85721 (United States); Fukui, Yasuo [Department of Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602 (Japan); Galametz, Maud [European Southern Observatory, Karl-Schwarzschild-Str. 2, D-85748 Garching-bei-Mnchen (Germany); Galliano, Frederic; Hony, Sacha; Lebouteiller, Vianney [CEA, Laboratoire AIM, Irfu/SAp, Orme des Merisiers, F-91191 Gif-sur-Yvette (France); Hughes, Annie [Max-Planck-Institut für Astronomie, Königstuhl 17, D-69117 Heidelberg (Germany); Indebetouw, Remy [Department of Astronomy, University of Virginia, and National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903 (United States); Israel, Frank P. [Sterrewacht Leiden, Leiden University, P.O. Box 9513, NL-2300 RA Leiden (Netherlands); Kawamura, Akiko [National Astronomical Observatory of Japan, Osawa, Mitaka, Tokyo, 181-8588 (Japan); and others

    2014-12-20

    The dust properties in the Large and Small Magellanic clouds (LMC/SMC) are studied using the HERITAGE Herschel Key Project photometric data in five bands from 100 to 500 μm. Three simple models of dust emission were fit to the observations: a single temperature blackbody modified by a power-law emissivity (SMBB), a single temperature blackbody modified by a broken power-law emissivity (BEMBB), and two blackbodies with different temperatures, both modified by the same power-law emissivity (TTMBB). Using these models, we investigate the origin of the submillimeter excess, defined as the submillimeter emission above that expected from SMBB models fit to observations <200 μm. We find that the BEMBB model produces the lowest fit residuals with pixel-averaged 500 μm submillimeter excesses of 27% and 43% for the LMC and SMC, respectively. Adopting gas masses from previous works, the gas-to-dust ratios calculated from our fitting results show that the TTMBB fits require significantly more dust than are available even if all the metals present in the interstellar medium (ISM) were condensed into dust. This indicates that the submillimeter excess is more likely to be due to emissivity variations than a second population of colder dust. We derive integrated dust masses of (7.3 ± 1.7) × 10{sup 5} and (8.3 ± 2.1) × 10{sup 4} M {sub ☉} for the LMC and SMC, respectively. We find significant correlations between the submillimeter excess and other dust properties; further work is needed to determine the relative contributions of fitting noise and ISM physics to the correlations.

  16. Dust and Gas in the Magellanic Clouds from the Heritage Herschel Key Project. I. Dust Properties and Insights into the Origin of the Submm (Submillimeter) Excess Emission

    Science.gov (United States)

    Gordon, Karl D.; Roman-Duval, Julia; Bot, Caroline; Meixner, Margaret; Babler, Brian; Bernard, Jean-Philippe; Bolatto, Alberto; Boyer, Martha L.; Clayton, Geoffrey C.; Engelbracht, Charles; hide

    2014-01-01

    The dust properties in the Large and Small Magellanic Clouds are studied using the HERITAGE Herschel Key Project photometric data in five bands from 100 to 500 micromillimeters. Three simple models of dust emission were fit to the observations: a single temperature blackbody modified by a powerlaw emissivity (SMBB), a single temperature blackbody modified by a broken power-law emissivity (BEMBB), and two blackbodies with different temperatures, both modified by the same power-law emissivity (TTMBB). Using these models we investigate the origin of the submillimeter excess; defined as the submillimeter (submm) emission above that expected from SMBB models fit to observations < 200 micromillimeters. We find that the BEMBB model produces the lowest fit residuals with pixel-averaged 500 micromillimeters submillimeter excesses of 27% and 43% for the Large and Small Magellanic Clouds, respectively. Adopting gas masses from previous works, the gas-to-dust ratios calculated from our fitting results show that the TTMBB fits require significantly more dust than are available even if all the metals present in the interstellar medium (ISM) were condensed into dust. This indicates that the submillimeter excess is more likely to be due to emissivity variations than a second population of colder dust. We derive integrated dust masses of (7.3 plus or minus 1.7) x 10 (sup 5) and (8.3 plus or minus 2.1) x 10 (sup 4) solar masses for the Large and Small Magellanic Clouds, respectively. We find significant correlations between the submillimeter excess and other dust properties; further work is needed to determine the relative contributions of fitting noise and ISM physics to the correlations.

  17. Fabrication of an absorber-coupled MKID detector and readout for sub-millimeter and far-infrared astronomy

    Science.gov (United States)

    Brown, Ari-David; Hsieh, Wen-Ting; Moseley, S. Harvey; Stevenson, Thomas R.; U-yen, Kongpop; Wollack, Edward J.

    2010-07-01

    We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and farinfrared astronomy. Each detector array is comprised of λ/2 stepped impedance resonators, a 1.5μm thick silicon membrane, and 380μm thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

  18. Fabrication of an Absorber-Coupled MKID Detector and Readout for Sub-Millimeter and Far-Infrared Astronomy

    Science.gov (United States)

    Brown, Ari-David; Hsieh, Wen-Ting; Moseley, S. Harvey; Stevenson, Thomas R.; U-yen, Kongpop; Wollack, Edward J.

    2010-01-01

    We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and farinfrared astronomy. Each detector array is comprised of lambda/2 stepped impedance resonators, a 1.5µm thick silicon membrane, and 380µm thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

  19. Hacking for astronomy: can 3D printers and open-hardware enable low-cost sub-/millimeter instrumentation?

    Science.gov (United States)

    Ferkinhoff, Carl

    2014-07-01

    There have been several exciting developments in the technologies commonly used n in the hardware hacking community. Advances in low cost additive-manufacturing processes (i.e. 3D-printers) and the development of openhardware projects, which have produced inexpensive and easily programmable micro-controllers and micro-computers (i.e. Arduino and Raspberry Pi) have opened a new door for individuals seeking to make their own devices. Here we describe the potential for these technologies to reduce costs in construction and development of submillimeter/millimeter astronomical instrumentation. Specifically we have begun a program to measure the optical properties of the custom plastics used in 3D-printers as well as the printer accuracy and resolution to assess the feasibility of directly printing sub- /millimeter transmissive optics. We will also discuss low cost designs for cryogenic temperature measurement and control utilizing Arduino and Raspberry Pi.

  20. All diamond self-aligned thin film transistor

    Science.gov (United States)

    Gerbi, Jennifer [Champaign, IL

    2008-07-01

    A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

  1. Are spin junction transistors suitable for signal processing?

    Science.gov (United States)

    Bandyopadhyay, S.; Cahay, M.

    2005-03-01

    A number of spintronic analogs of bipolar junction transistors have been proposed for signal processing applications. Here, we show that some of these transistors unfortunately may not have sufficient voltage and current gains for signal processing. They may also have poor isolation between input and output terminals which hinders unidirectional propagation of logic signal from the driver stage to the output. Therefore, these devices may not improve state-of-the-art signal processing capability, although they may provide some additional functionality by offering nonvolatile storage. They may also have niche applications in nonlinear circuits.

  2. Can Molecular Quantum Interference Effect Transistors Survive Vibration?

    Science.gov (United States)

    Chen, Shuguang; Zhou, WeiJun; Zhang, Qing; Kwok, YanHo; Chen, GuanHua; Ratner, Mark A

    2017-10-19

    Quantum interference in cross-conjugated molecules can be utilized to construct molecular quantum interference effect transistors. However, whether its application can be achieved depends on the survivability of the quantum interference under real conditions such as nuclear vibration. We use two simulation methods to investigate the effects of nuclear vibration on quantum interference in a meta-linked benzene system. The simulation results suggest that the quantum interference is robust against nuclear vibration not only in the steady state but also in its transient dynamics, and thus the molecular quantum interference effect transistors can be realized.

  3. Chemical and biological sensing with organic thin-film transistors

    Science.gov (United States)

    Mabeck, Jeffrey Todd

    Organic thin-film transistors (OTFTs) offer a great deal of promise for applications in chemical and biological sensing where there is a demand for small, portable, and inexpensive sensors. OTFTs have many advantages over other types of sensors, including low-cost fabrication, straightforward miniaturization, simple instrumentation, and inherent signal amplification. This dissertation examines two distinct types of OTFTs: organic field-effect transistors (OFETs) based on pentacene, and organic electrochemical transistors (OECTs) based on poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). The bulk of the previous work on sensing with OFETs has focused on gas sensing, and this dissertation contributes to this body of work by briefly treating the large, reversible response of pentacene OFETs to humidity. However, there are many applications where the analyte of interest must be detected in an aqueous environment rather than a gaseous environment, and very little work has been done in this area for OFETs. Therefore, the integration of pentacene OFETs with microfluidics is treated in detail. Using poly(dimethylsiloxane) (PDMS) microfluidic channels to confine aqueous solutions over the active region of pentacene transistors, it is demonstrated that the current-voltage characteristics remain stable under aqueous flow with a decrease in mobility of ˜30% compared to its value when dry. The operation of PEDOT:PSS transistors is also treated in detail. It is demonstrated that their transistor behavior cannot be attributed solely to a field effect and that ion motion is key to the switching mechanism. It is also demonstrated that simple glucose sensors based on PEDOT:PSS OECTs are sensitive to low glucose concentrations below 1 mM, therefore showing promise for potential application in the field of noninvasive glucose monitoring for diabetic patients using saliva rather than blood samples. Furthermore, a novel microfluidic gating technique has been

  4. Ultrathin GaGeTe p-type transistors

    Science.gov (United States)

    Wang, Weike; Li, Liang; Zhang, Zhitao; Yang, Jiyong; Tang, Dongsheng; Zhai, Tianyou

    2017-11-01

    We exfoliated bulk GaGeTe crystals down to ultrathin flakes using the scotch tape method and fabricated field effect transistors (FETs). The GaGeTe FETs display a p-type behavior with drain current modulation on the order of 103, hole mobility of 0.45 cm2 V-1 s-1, and photoresponsivity of 3.6 A W-1 at room temperature. These findings suggest that the layered GaGeTe is a promising 2D semiconductor for fabricating devices, such as transistors and photodetectors.

  5. Consolidation Waves

    OpenAIRE

    Berg, Ward; Smit, Han

    2007-01-01

    textabstractThis paper explains why consolidation acquisitions occur in waves and it predicts the differing role each firm is likely to play in the consolidation game. We propose that whether a firm assumes the role of rival consolidator, target, or passive observer depends on the position of the firm relative to the entity that merges first. Our model predicts that an initial acquisition triggers a wave of follow-on acquisitions, where the process of asset accumulation by the consolidator is...

  6. Wave Star

    DEFF Research Database (Denmark)

    Kramer, Morten; Andersen, Thomas Lykke

    Nærværende rapport beskriver modelforsøg udført på Aalborg Universitet, Institut for Vand, Jord og Miljøteknik med bølgeenergianlægget Wave Star.......Nærværende rapport beskriver modelforsøg udført på Aalborg Universitet, Institut for Vand, Jord og Miljøteknik med bølgeenergianlægget Wave Star....

  7. Wave Star

    DEFF Research Database (Denmark)

    Kramer, Morten; Frigaard, Peter

    Nærværende rapport beskriver modelforsøg udført på Aalborg Universitet, Institut for Byggeri og Anlæg med bølgeenergianlæget Wave Star.......Nærværende rapport beskriver modelforsøg udført på Aalborg Universitet, Institut for Byggeri og Anlæg med bølgeenergianlæget Wave Star....

  8. Millimeter and Submillimeter Observations of Comet 67P's Nucleus, Gas, and Dust with the Rosetta/MIRO Instrument

    Science.gov (United States)

    Hofstadter, Mark

    2016-04-01

    The Microwave Instrument for the Rosetta Orbiter (MIRO) has been making measurements of comet 67P/C-G since June 2014, when the comet was 3.92 AU from the Sun and Rosetta was approximately 400,000 km from the nucleus. Those first observations were spatially unresolved measurements of the 556 GHz water line, used to infer the abundance and velocity of water vapor in the coma (Gulkis et al. 2015, Science 347). In the almost two years since that time, as the spacecraft has moved closer to the nucleus and the comet has become more active (perihelion at 1.2 AU from the Sun occurred in August 2015), MIRO's submillimeter spectrometer (working at frequencies near 550 GHz, or wavelengths near 0.5 mm) has been used to determine the velocity, abundance, and spatial distribution of H216O, H217O, H218O, CH3OH, NH3, and CO in the coma as a function of time (e.g. water is discussed by Biver et al. 2015 and Lee et al. 2015, Astron. and Astrophys. 583). In addition to its submillimeter spectrometer, MIRO has two broad band continuum channels operating at wavelengths near 0.5 and 1.6 millimeter. These channels are designed to probe the nucleus ˜1 millimeter to 10 cm below the surface. Data have been used to infer properties such as thermal inertia, porosity, and ice content as functions of location, depth, and time (e.g. Schloerb et al. 2015 and Choukroun et al. 2015, Astron. and Astrophys. 583). These channels have also been used to map the distribution of relatively large dust grains (radius > ˜1 mm) in the inner coma of the comet, with the potential to constrain models of dust acceleration, cooling, and fragmentation. This talk will review the latest results from MIRO's measurements of the nucleus, coma, and dust, and discuss some of the processes that couple these components of the comet.

  9. The JCMT Transient Survey: Identifying Submillimeter Continuum Variability over Several Year Timescales Using Archival JCMT Gould Belt Survey Observations

    Science.gov (United States)

    Mairs, Steve; Johnstone, Doug; Kirk, Helen; Lane, James; Bell, Graham S.; Graves, Sarah; Herczeg, Gregory J.; Scicluna, Peter; Bower, Geoffrey C.; Chen, Huei-Ru Vivien; Hatchell, Jennifer; Aikawa, Yuri; Chen, Wen-Ping; Kang, Miju; Kang, Sung-Ju; Lee, Jeong-Eun; Morata, Oscar; Pon, Andy; Scholz, Aleks; Takahashi, Satoko; Yoo, Hyunju; The JCMT Transient Team

    2017-11-01

    Investigating variability at the earliest stages of low-mass star formation is fundamental in understanding how a protostar assembles mass. While many simulations of protostellar disks predict non-steady accretion onto protostars, deeper investigation requires robust observational constraints on the frequency and amplitude of variability events characterized across the observable SED. In this study, we develop methods to robustly analyze repeated observations of an area of the sky for submillimeter variability in order to determine constraints on the magnitude and frequency of deeply embedded protostars. We compare 850 μm JCMT Transient Survey data with archival JCMT Gould Belt Survey data to investigate variability over 2-4 year timescales. Out of 175 bright, independent emission sources identified in the overlapping fields, we find seven variable candidates, five of which we classify as Strong, and the remaining two we classify as Extended to indicate that the latter are associated with larger-scale structure. For the Strong variable candidates, we find an average fractional peak brightness change per year of | 4.0| % {{yr}}-1, with a standard deviation of 2.7 % {{yr}}-1. In total, 7% of the protostars associated with 850 μm emission in our sample show signs of variability. Four of the five Strong sources are associated with a known protostar. The remaining source is a good follow-up target for an object that is anticipated to contain an enshrouded, deeply embedded protostar. In addition, we estimate the 850 μm periodicity of the submillimeter variable source, EC 53, to be 567 ± 32 days, based on the archival Gould Belt Survey data.

  10. Blast Waves

    CERN Document Server

    Needham, Charles E

    2010-01-01

    The primary purpose of this text is to document many of the lessons that have been learned during the author’s more than forty years in the field of blast and shock. The writing therefore takes on an historical perspective, in some sense, because it follows the author’s experience. The book deals with blast waves propagating in fluids or materials that can be treated as fluids. It begins by distinguishing between blast waves and the more general category of shock waves. It then examines several ways of generating blast waves, considering the propagation of blast waves in one, two and three dimensions as well as through the real atmosphere. One section treats the propagation of shocks in layered gases in a more detailed manner. The book also details the interaction of shock waves with structures in particular reflections, progressing from simple to complex geometries, including planar structures, two-dimensional structures such as ramps or wedges, reflections from heights of burst, and three-dimensional st...

  11. Implantation-Free 4H-SiC Bipolar Junction Transistors with Double Base Epi-layers

    Science.gov (United States)

    2007-05-14

    junction transistor ( BJT ) which is completely free of ion implantation and hence is free of the implantation- induced crystal damages and high-temperature...Index Terms—Silicon carbide, bipolar junction transistors ( BJTs ), power transistors ...Std Z39-18 I. INTRODUCTION 4H-SiC bipolar junction transistor ( BJT ) is an important switching device for high power and high temperature

  12. Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs

    CERN Document Server

    Gerardin, S; Cornale, D; Ding, L; Mattiazzo, S; Paccagnella, A; Faccio, F; Michelis, S

    2015-01-01

    We studied device-to-device variations as a function of total dose in MOSFETs, using specially designed test structures and procedures aimed at maximizing matching between transistors. Degradation in nMOSFETs is less severe than in pMOSFETs and does not show any clear increase in sample-to-sample variability due to the exposure. At doses smaller than 1 Mrad( SiO2) variability in pMOSFETs is also practically unaffected, whereas at very high doses-in excess of tens of Mrad( SiO2)-variability in the on-current is enhanced in a way not correlated to pre-rad variability. The phenomenon is likely due to the impact of random dopant fluctuations on total ionizing dose effects.

  13. Wave Generation Theory

    DEFF Research Database (Denmark)

    Frigaard, Peter; Høgedal, Michael; Christensen, Morten

    The intention of this manual is to provide some formulas and techniques which can be used for generating waves in hydraulic laboratories. Both long crested waves (2-D waves) and short crested waves (3-D waves) are considered....

  14. Quantum-limited detection of millimeter waves using superconducting tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Mears, C.A.

    1991-09-01

    The quasiparticle tunneling current in a superconductor-insulator- superconductor (SIS) tunnel junction is highly nonlinear. Such a nonlinearity can be used to mix two millimeter wave signals to produce a signal at a much lower intermediate frequency. We have constructed several millimeter and sub-millimeter wave SIS mixers in order to study high frequency response of the quasiparticle tunneling current and the physics of high frequency mixing. We have made the first measurement of the out-of-phase tunneling currents in an SIS tunnel junction. We have developed a method that allows us to determine the parameters of the high frequency embedding circuit by studying the details of the pumped I-V curve. We have constructed a 80--110 GHz waveguide-based mixer test apparatus that allows us to accurately measure the gain and added noise of the SIS mixer under test. Using extremely high quality tunnel junctions, we have measured an added mixer noise of 0.61 {plus minus} 0.36 quanta, which is within 25 percent of the quantum limit imposed by the Heisenberg uncertainty principle. This measured performance is in excellent agreement with that predicted by Tucker's theory of quantum mixing. We have also studied quasioptically coupled millimeter- and submillimeter-wave mixers using several types of integrated tuning elements. 83 refs.

  15. Quantum-limited detection of millimeter waves using superconducting tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Mears, Carl Atherton [Univ. of California, Berkeley, CA (United States)

    1991-09-01

    The quasiparticle tunneling current in a superconductor-insulator- superconductor (SIS) tunnel junction is highly nonlinear. Such a nonlinearity can be used to mix two millimeter wave signals to produce a signal at a much lower intermediate frequency. We have constructed several millimeter and sub-millimeter wave SIS mixers in order to study high frequency response of the quasiparticle tunneling current and the physics of high frequency mixing. We have made the first measurement of the out-of-phase tunneling currents in an SIS tunnel junction. We have developed a method that allows us to determine the parameters of the high frequency embedding circuit by studying the details of the pumped I-V curve. We have constructed a 80--110 GHz waveguide-based mixer test apparatus that allows us to accurately measure the gain and added noise of the SIS mixer under test. Using extremely high quality tunnel junctions, we have measured an added mixer noise of 0.61 ± 0.36 quanta, which is within 25 percent of the quantum limit imposed by the Heisenberg uncertainty principle. This measured performance is in excellent agreement with that predicted by Tucker`s theory of quantum mixing. We have also studied quasioptically coupled millimeter- and submillimeter-wave mixers using several types of integrated tuning elements. 83 refs.

  16. A quasioptical steering system for the CCAT/XSPEC submillimeter multi-object spectrometer

    Science.gov (United States)

    Chapman, S. C.; Tikhomirov, A.; Bradford, C. M.; Hailey-Dunsheath, S.

    2014-07-01

    A two arm, opto-mechanical positioner mechanism is presented in this proceedings as a candidate steering system for the millimeter-wave XSPEC spectrograph. The design is well matched to the expected target density on the sky, and meeting all requirements of the Cerro Chajnantor Atacama Telescope (CCAT), site environmental conditions (e.g., operating temperature and power dissipation), and the positioning requirements themselves for acquiring and tracking astronomical objects whose light is fed into the XSPEC spectrograph units. The prototype design has been fabricated and tested for basic operations.

  17. A Novel Design of Micromachined Horn Antenna for Millimeter and Sub-millimeter Applications

    Directory of Open Access Journals (Sweden)

    A.Ansari

    2007-04-01

    Full Text Available A novel design of micromachined horn antenna is presented. Horn excited with a quasi-Yagi antenna. In this paper micromachining process of this antenna, and simulation results of a horn structure operate around 330GHz using Agilent High Frequency Structure Simulator (HFSS software is presented. The results indicate a gain around 10dB, directivity 10.5dB and resonant dipole impedance 48.3Ω for horn antenna. The micromachined horn antenna is a high-efficiency antenna suitable for applications in millimeter-wave imaging systems, remote-sensing, and radio astronomy.

  18. Developments of wide field submillimeter optics and lens antenna-coupled MKID cameras

    Science.gov (United States)

    Sekimoto, Y.; Nitta, T.; Karatsu, K.; Sekine, M.; Sekiguchi, S.; Okada, T.; Shu, S.; Noguchi, T.; Naruse, M.; Mitsui, K.; Okada, N.; Tsuzuki, T.; Dominjon, A.; Matsuo, H.

    2014-07-01

    Wide field cryogenic optics and millimeter-wave Microwave Kinetic Inductance Detector (MKID) cameras with Si lens array have been developed. MKID is a Cooper-pair breaking photon detector and consists of supercon- ducting resonators which enable microwave (~GHz) frequency multiplexing. Antenna-coupled Aluminum CPW resonators are put in a line on a Si substrate to be read by a pair of coaxial cables. A 220 GHz - 600 pixels MKID camera with anti-reflection (AR) coated Si lens has been demonstrated in an 0.1 K cryostat. A compact cryogenic system with high refractive index materials has been developed for the MKID camera.

  19. Calculation and analysis for the quasi-optical biconical cavity in submillimeter band

    Science.gov (United States)

    Hu, Xiaochao; Wang, Shijie

    1986-06-01

    The performance characteristics of a quasi-optical biconical cavity (like that described by Gustinci, 1977) as a submm-wave receiver antenna are investigated theoretically. The distribution of EM fields in the loaded cavity is calculated; the relationship between cavity size and the input impedance and receiving coefficient is determined; and the conditions for impedance and beam-pattern matching are obtained. For a given divergence angle of the Gaussian beam, the maximum receiving coefficient is obtained with an opening 1.5 times the beam-waist diameter. Diagrams and graphs are provided.

  20. Quantum Information Processing by Electron Spin Resonance in a Transistor Structure

    Science.gov (United States)

    Yablonovitch, Eli

    2001-03-01

    Isolated electron spins in low temperature semiconductors are now recognized to have considerable potential for storing and manipulating quantum information. One of the great advantages of a spin in a semiconductor is that it can be embedded into a transistor structure, and it can thereby lend itself to large-scale integration of a quantum information processor. One essential element for spin-based quantum information processing is to be able to individually address the spins, or qubits, rotations. The electron spin resonance (ESR) electrons in a GaAs/AlGaAs heterostructure can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that electron g-factor is being electrostatically controlled by shifting the electron wave function from one epitaxial layer to another with different g-factors. We report our observations of gate-voltage tuned ESR in a two-dimensional electron system. We demonstrate that the electrostatic field of a gate can effectively adjust the weighting of the electron wave function between heterostructure layers of different composition producing a large g-factor change. We have monitored the ESR spin flips by means of the source/drain channel current, and conversely we have tuned the spin resonance frequency by means of the gate voltage. These are two of the elementary operations required in a quantum information processor.

  1. Semiconductor data book characteristics of approx. 10,000 transistors, FETs, UJTs, diodes, rectifiers, optical semiconductors, triacs and SCRs

    CERN Document Server

    Ball, A M

    1981-01-01

    Semiconductor Data Book, 11th Edition presents tables for ratings and characteristics of transistors and multiple transistors; silicon field effect transistors; unijunction transistors; low power-, variable-, power rectifier-, silicon reference-, and light emitting diodes; photodetectors; triacs; thyristors; lead identification; and transistor comparable types. The book starts by providing an introduction and explanation of tables and manufacturers' codes and addresses. Professionals requiring such data about semiconductors will find the book useful.

  2. Current-Induced Transistor Sensorics with Electrogenic Cells

    Directory of Open Access Journals (Sweden)

    Peter Fromherz

    2016-04-01

    Full Text Available The concepts of transistor recording of electroactive cells are considered, when the response is determined by a current-induced voltage in the electrolyte due to cellular activity. The relationship to traditional transistor recording, with an interface-induced response due to interactions with the open gate oxide, is addressed. For the geometry of a cell-substrate junction, the theory of a planar core-coat conductor is described with a one-compartment approximation. The fast electrical relaxation of the junction and the slow change of ion concentrations are pointed out. On that basis, various recording situations are considered and documented by experiments. For voltage-gated ion channels under voltage clamp, the effects of a changing extracellular ion concentration and the enhancement/depletion of ion conductances in the adherent membrane are addressed. Inhomogeneous ion conductances are crucial for transistor recording of neuronal action potentials. For a propagating action potential, the effects of an axon-substrate junction and the surrounding volume conductor are distinguished. Finally, a receptor-transistor-sensor is described, where the inhomogeneity of a ligand–activated ion conductance is achieved by diffusion of the agonist and inactivation of the conductance. Problems with regard to a development of reliable biosensors are mentioned.

  3. Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors

    NARCIS (Netherlands)

    Yoo, H.; Ghittorelli, M.; Smits, E.C.P.; Gelinck, G.H.; Lee, H.K.; Torricelli, F.; Kim, J.J.

    2016-01-01

    Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they

  4. Physics of organic ferroelectric field-effect transistors

    NARCIS (Netherlands)

    Brondijk, J.J.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and low power consumption. Here, an analytical model

  5. Magnetic tunnel transistor with a silicon hot-electron emitter

    NARCIS (Netherlands)

    Le Minh, P.; Gökcan, H.; Lodder, J.C.; Jansen, R.

    2005-01-01

    We report on a modified magnetic tunnel transistor having a silicon tunnel emitter. The device has the structure Si/Al2O3 /base/Si with a spin-valve metal base, a Schottky barrier collector, but a silicon emitter separated from the base by a thin tunnel oxide. The energy of the hot electrons

  6. Frequency response of electrolyte-gated graphene electrodes and transistors

    Science.gov (United States)

    Drieschner, Simon; Guimerà, Anton; Cortadella, Ramon G.; Viana, Damià; Makrygiannis, Evangelos; Blaschke, Benno M.; Vieten, Josua; Garrido, Jose A.

    2017-03-01

    The interface between graphene and aqueous electrolytes is of high importance for applications of graphene in the field of biosensors and bioelectronics. The graphene/electrolyte interface is governed by the low density of states of graphene that limits the capacitance near the Dirac point in graphene and the sheet resistance. While several reports have focused on studying the capacitance of graphene as a function of the gate voltage, the frequency response of graphene electrodes and electrolyte-gated transistors has not been discussed so far. Here, we report on the impedance characterization of single layer graphene electrodes and transistors, showing that due to the relatively high sheet resistance of graphene, the frequency response is governed by the distribution of resistive and capacitive circuit elements along the graphene/electrolyte interface. Based on an analytical solution for the impedance of the distributed circuit elements, we model the graphene/electrolyte interface both for the electrode and the transistor configurations. Using this model, we can extract the relevant material and device parameters such as the voltage-dependent intrinsic sheet and series resistances as well as the interfacial capacitance. The model also provides information about the frequency threshold of electrolyte-gated graphene transistors, above which the device exhibits a non-resistive response, offering an important insight into the suitable frequency range of operation of electrolyte-gated graphene devices.

  7. Quantum transport in molybdenum disulfide and germanane transistors

    NARCIS (Netherlands)

    Chen, Qihong

    2017-01-01

    In the past decades, electronic devices are getting smaller and more powerful, following the Moore’s Law. Nevertheless, silicon-based field effect transistors are rapidly approaching their scaling limit. Thus, exploring new channel materials as well as novel device architectures are highly demanded

  8. Integrated circuits based on bilayer MoS₂ transistors.

    Science.gov (United States)

    Wang, Han; Yu, Lili; Lee, Yi-Hsien; Shi, Yumeng; Hsu, Allen; Chin, Matthew L; Li, Lain-Jong; Dubey, Madan; Kong, Jing; Palacios, Tomas

    2012-09-12

    Two-dimensional (2D) materials, such as molybdenum disulfide (MoS(2)), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS(2) allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS(2) show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS(2) to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS(2). Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.

  9. Selected Transistor Material for the Information-Seeking Adult.

    Science.gov (United States)

    Ringold, Dorman R.

    This study was undertaken to identify and organize meaningful and useful basic materials on transistor principles and applications, and to explore some of the elements required for adult teaching. It was limited to the apparent needs of information-seeking adults in greater Los Angeles who desired occupational skills. A literature review…

  10. Multicolored Nanofiber Based Organic Light-Emitting Transistor

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Kjelstrup-Hansen, Jakob; Tavares, Luciana

    driven device by combining nanofibers made from two different molecules, parahexaphenylene (p6P) and 5,5´-Di-4-biphenyl-2,2´-bithiophene (PPTTPP), which emits blue and green light, respectively. The organic nanofibers are implemented on a bottom gate/bottom contact field-effect transistor platform using...

  11. Multiple facets of tightly coupled transducer-transistor structures.

    Science.gov (United States)

    Heidari, Hadi; Dahiya, Ravinder

    2015-12-04

    The ever increasing demand for data processing requires different paradigms for electronics. Excellent performance capabilities such as low power and high speed in electronics can be attained through several factors including using functional materials, which sometimes acquire superior electronic properties. The transduction-based transistor switching mechanism is one such possibility, which exploits the change in electrical properties of the transducer as a function of a mechanically induced deformation. Originally developed for deformation sensors, the technique is now moving to the centre stage of the electronic industry as the basis for new transistor concepts to circumvent the gate voltage bottleneck in transistor miniaturization. In issue 37 of Nanotechnology, Chang et al show the piezoelectronic transistor (PET), which uses a fast, low-power mechanical transduction mechanism to propagate an input gate voltage signal into an output resistance modulation. The findings by Chang et al will spur further research into piezoelectric scaling, and the PET fabrication techniques needed to advance this type of device in the future.

  12. Metal-nanoparticle single-electron transistors fabricated using electromigration

    DEFF Research Database (Denmark)

    Bolotin, K I; Kuemmeth, Ferdinand; Pasupathy, A N

    2004-01-01

    We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all...

  13. Effects of overheating in a single-electron transistor

    DEFF Research Database (Denmark)

    Korotkov, A. N.; Samuelsen, Mogens Rugholm; Vasenko, S. A.

    1994-01-01

    Heating of a single-electron transistor (SET) caused by the current flowing through it is considered. The current and the temperature increase should be calculated self-consistently taking into account various paths of the heat drain. Even if there is no heat drain from the central electrode...

  14. Ultrathin regioregular poly(3-hexyl thiophene) field-effect transistors

    DEFF Research Database (Denmark)

    Sandberg, H.G.O.; Frey, G.L.; Shkunov, M.N.

    2002-01-01

    Ultrathin films of regioregular poly(3-hexyl thiophene) (RR-P3HT) were deposited through a dip-coating technique and utilized as the semiconducting film in field-effect transistors (FETs). Proper selection of the substrate and solution concentration enabled the growth of a monolayer-thick RR-P3HT...

  15. Transistor-like behavior of transition metal complexes

    DEFF Research Database (Denmark)

    Albrecht, Tim; Guckian, A; Ulstrup, Jens

    2005-01-01

    scanning tunneling microscope (in situ STM). This configuration resembles a single-molecule transistor, where the reference electrode corresponds to the gate electrode. It operates at room temperature in a condensed matter (here aqueous) environment. Amplification on-off ratios up to 50 are found when...

  16. Quantum thermal rectification to design thermal diodes and transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joulain, Karl; Ezzahri, Younes; Ordonez-Miranda, Jose [Univ. de Poitiers, Futuroscope Chasseneuil (France). Inst. Pprime, CNRS

    2017-05-01

    We study in this article how heat can be exchanged between two-level systems, each of them being coupled to a thermal reservoir. Calculations are performed solving a master equation for the density matrix using the Born-Markov approximation. We analyse the conditions for which a thermal diode and a thermal transistor can be obtained as well as their optimisation.

  17. Nanoscaled biological gated field effect transistors for cytogenetic analysis

    DEFF Research Database (Denmark)

    Kwasny, Dorota; Dimaki, Maria; Andersen, Karsten Brandt

    2014-01-01

    Cytogenetic analysis is the study of chromosome structure and function, and is often used in cancer diagnosis, as many chromosome abnormalities are linked to the onset of cancer. A novel label free detection method for chromosomal translocation analysis using nanoscaled field effect transistors...

  18. Transistors-From Point Contact to Single Electron

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 2; Issue 12. Transistors – From Point Contact to Single Electron. D N Bose. General Article Volume 2 Issue 12 December 1997 pp 39-54. Fulltext. Click here to view fulltext PDF. Permanent link: http://www.ias.ac.in/article/fulltext/reso/002/12/0039-0054 ...

  19. Development of insulated gate bipolar transistor-based power ...

    Indian Academy of Sciences (India)

    Development of insulated gate bipolar transistor-based power supply for elemental copper vapour laser. R K MISHRA∗, S V NAKHE, G N TIWARI and J K MITTAL. Laser Systems Engineering Division, Raja Ramanna Centre for Advanced Technology,. Indore 452 013, India. *Corresponding author. E-mail: rkm@rrcat.gov.in.

  20. Identifying failure mechanisms in LDMOS transistors by analytical stability analysis

    NARCIS (Netherlands)

    Ferrara, A.; Steeneken, P.G.; Boksteen, B.K.; Heringa, A.; Scholten, A.J.; Schmitz, Jurriaan; Hueting, Raymond Josephus Engelbart

    2014-01-01

    In this work, analytical stability equations are derived and combined with a physics-based model of an LDMOS transistor in order to identify the primary cause of failure in different operating and bias conditions. It is found that there is a gradual boundary between an electrical failure region at

  1. Electronics: Mott Transistor: Fundamental Studies and Device Operation Mechanisms

    Science.gov (United States)

    2016-03-21

    display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. Harvard University Office for Sponsored Programs...Transistor: Fundamental studies and device operation mechanisms PI: Shriram Ramanathan, Harvard University Grant Number: W911NF-14-1-0669 OVERVIEW The

  2. Development of insulated gate bipolar transistor-based power ...

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 75; Issue 5. Development of insulated gate bipolar transistor-based power supply for ... Author Affiliations. R K Mishra1 S V Nakhe1 G N Tiwari1 J K Mittal1. Laser Systems Engineering Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India ...

  3. Investigations of electron injection in a methanofullerene thin film transistor

    NARCIS (Netherlands)

    von Hauff, Elizabeth; Parisi, Juergen; Dyakonov, Vladimir

    2006-01-01

    In this study we investigate charge injection into a methanofullerene. The temperature and electric field dependent source-drain currents from contact limited [6,6]-phenyl C61-butyric acid methyl ester (PCBM) thin film transistors (TFTs) were analyzed. A form for the temperature and field dependent

  4. Operational Stability of Organic Field‐Effect Transistors

    NARCIS (Netherlands)

    Bobbert, P.A.; Sharma, A.; Matthijssen, S.J.G.; Kemerink, M.; de Leeuw, D.M.

    2012-01-01

    Organic field-effect transistors (OFETs) are considered in technological applications for which low cost or mechanical flexibility are crucial factors. The environmental stability of the organic semiconductors used in OFETs has improved to a level that is now sufficient for commercialization.

  5. Multiple facets of tightly coupled transducer-transistor structures

    Science.gov (United States)

    Heidari, Hadi; Dahiya, Ravinder

    2015-12-01

    The ever increasing demand for data processing requires different paradigms for electronics. Excellent performance capabilities such as low power and high speed in electronics can be attained through several factors including using functional materials, which sometimes acquire superior electronic properties. The transduction-based transistor switching mechanism is one such possibility, which exploits the change in electrical properties of the transducer as a function of a mechanically induced deformation. Originally developed for deformation sensors, the technique is now moving to the centre stage of the electronic industry as the basis for new transistor concepts to circumvent the gate voltage bottleneck in transistor miniaturization. In issue 37 of Nanotechnology, Chang et al show the piezoelectronic transistor (PET), which uses a fast, low-power mechanical transduction mechanism to propagate an input gate voltage signal into an output resistance modulation. The findings by Chang et al will spur further research into piezoelectric scaling, and the PET fabrication techniques needed to advance this type of device in the future.

  6. Flexible thin-film transistors using multistep UV nanoimprint lithography

    NARCIS (Netherlands)

    Moonen, P.; Vratzov, B.; Smaal, W.T.T.; Kjellander, B.K.C.; Gelinck, G.H.; Meinders, E.R.; Huskens, Jurriaan

    2012-01-01

    A multistep imprinting process is presented for the fabrication of a bottom-contact, bottom-gate thin-film transistor (TFT) on poly(ethylene naphthalate) (PEN) foil by patterning all layers of the metal–insulator–metal stack by UV nanoimprint lithography (UV NIL). The flexible TFTs were fabricated

  7. Development of the spin valve transistor (invited paper)

    NARCIS (Netherlands)

    Monsma, D.J.; Vlutters, R.; Shimatsu, T.; Shimatsu, T.; Keim, Enrico G.; Mollema, R.H.; Lodder, J.C.

    1997-01-01

    As the easiest experimental approach, GMR (giant magnetoresistance) is usually measured using the current in plane (CIP)-GMR. The spin-valve transistor has previously been presented as a spectroscopic tool to measure current perpendicular to the planes (CPP)-GMR. Hot electrons cross the magnetic

  8. Bipolar Transistors Can Detect Charge in Electrostatic Experiments

    Science.gov (United States)

    Dvorak, L.

    2012-01-01

    A simple charge indicator with bipolar transistors is described that can be used in various electrostatic experiments. Its behaviour enables us to elucidate links between 'static electricity' and electric currents. In addition it allows us to relate the sign of static charges to the sign of the terminals of an ordinary battery. (Contains 7 figures…

  9. Graphene transistors with multifunctional polymer brushes for biosensing applications.

    Science.gov (United States)

    Hess, Lucas H; Lyuleeva, Alina; Blaschke, Benno M; Sachsenhauser, Matthias; Seifert, Max; Garrido, Jose A; Deubel, Frank

    2014-06-25

    Exhibiting a combination of exceptional structural and electronic properties, graphene has a great potential for the development of highly sensitive sensors. To date, many challenging chemical, biochemical, and biologic sensing tasks have been realized based on graphene. However, many of these sensors are rather unspecific. To overcome this problem, for instance, the sensor surface can be modified with analyte-specific transducers such as enzymes. One problem associated with the covalent attachment of such biomolecular systems is the introduction of crystal defects that have a deleterious impact on the electronic properties of the sensor. In this work, we present a versatile platform for biosensing applications based on polymer-modified CVD-grown graphene transistors. The functionalization method of graphene presented here allows one to integrate several functional groups within surface-bound polymer brushes without the introduction of additional defects. To demonstrate the potential of this polymer brush functionalization scaffold, we modified solution-gated graphene field-effect transistors with the enzyme acetylcholinesterase and a transducing group, allowing the detection of the neurotransmitter acetylcholine. Taking advantage of the transducing capability of graphene transistors and the versatility of polymer chemistry and enzyme biochemistry, this study presents a novel route for the fabrication of highly sensitive, multipurpose transistor sensors that can find application for a multitude of biologically relevant analytes.

  10. Microwave flexible transistors on cellulose nanofibrillated fiber substrates

    Science.gov (United States)

    Jung-Hun Seo; Tzu-Hsuan Chang; Jaeseong Lee; Ronald Sabo; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma

    2015-01-01

    In this paper, we demonstrate microwave flexible thin-film transistors (TFTs) on biodegradable substrates towards potential green portable devices. The combination of cellulose nanofibrillated fiber (CNF) substrate, which is a biobased and biodegradable platform, with transferrable single crystalline Si nanomembrane (Si NM), enables the realization of truly...

  11. Influence of halo doping profiles on MOS transistor mismatch

    NARCIS (Netherlands)

    Andricciola, P.; Tuinhout, H.

    2009-01-01

    Halo implants are used in modern CMOS technology to reduce the short channel effect. However, the lateral non-uniformity of the channel doping has been proven to degenerate the mismatch performance. With this paper we want to discuss the influence of the halo profile on MOS transistor mismatch. The

  12. The spin-valve transistor: a preview and outlook

    NARCIS (Netherlands)

    Jansen, R.

    2003-01-01

    Combining ferromagnetic and semiconductor materials is a challenging route to create new options for electronic devices in which the spin of the electron is employed. The spin-valve transistor (SVT) is the first of such hybrid devices shown to work successfully. This review describes the basic

  13. The spin-valve transistor: Fabrication, characterization and physics

    NARCIS (Netherlands)

    Jansen, R.; van 't Erve, O.M.J.; Kim, S.D.; Vlutters, R.; Anil Kumar, P.S.; Lodder, J.C.

    2001-01-01

    An overview is given of the fabrication, basic properties, and physics of the spin-valve transistor. We describe the layout of this three-terminal ferromagnet/semiconductor hybrid device, as well as the operating principle. Fabrication technologies are discussed, including vacuum metal bonding. We

  14. Conducted EMI in Inverters with SiC Transistors

    NARCIS (Netherlands)

    Gong, X.

    2013-01-01

    Conducted EMI in Inverters with SiC Transistors Electromagnetic Interference (EMI) is the main side effect accompanied with the fast voltage and current switching transients in power electronics applications. Compliance of the Electromagnetic Compatibility (EMC) standard is prescribed for any power

  15. Transistor analogs of emergent iono-neuronal dynamics

    Science.gov (United States)

    Rachmuth, Guy; Poon, Chi-Sang

    2008-01-01

    Neuromorphic analog metal-oxide-silicon (MOS) transistor circuits promise compact, low-power, and high-speed emulations of iono-neuronal dynamics orders-of-magnitude faster than digital simulation. However, their inherently limited input voltage dynamic range vs power consumption and silicon die area tradeoffs makes them highly sensitive to transistor mismatch due to fabrication inaccuracy, device noise, and other nonidealities. This limitation precludes robust analog very-large-scale-integration (aVLSI) circuits implementation of emergent iono-neuronal dynamics computations beyond simple spiking with limited ion channel dynamics. Here we present versatile neuromorphic analog building-block circuits that afford near-maximum voltage dynamic range operating within the low-power MOS transistor weak-inversion regime which is ideal for aVLSI implementation or implantable biomimetic device applications. The fabricated microchip allowed robust realization of dynamic iono-neuronal computations such as coincidence detection of presynaptic spikes or pre- and postsynaptic activities. As a critical performance benchmark, the high-speed and highly interactive iono-neuronal simulation capability on-chip enabled our prompt discovery of a minimal model of chaotic pacemaker bursting, an emergent iono-neuronal behavior of fundamental biological significance which has hitherto defied experimental testing or computational exploration via conventional digital or analog simulations. These compact and power-efficient transistor analogs of emergent iono-neuronal dynamics open new avenues for next-generation neuromorphic, neuroprosthetic, and brain-machine interface applications. PMID:19404469

  16. Organic transistors in optical displays and microelectronic applications

    NARCIS (Netherlands)

    Gelinck, G.H.; Heremans, P.; Nomoto, K.; Anthopoulos, T.D.

    2010-01-01

    Organic thin-film transistors (OTFTs) offer unprecedented opportunities for implementation in a broad range of technological applications spanning from large-volume microelectronics and optical displays to chemical and biological sensors. In this Progress Report, we review the application of organic

  17. Discontinuous pn-heterojunction for organic thin film transistors

    NARCIS (Netherlands)

    Cho, B.; Yu, S.H.; Kim, M.; Lee, M.H.; Huh, W.; Lee, J.; Kim, J.; Cho, J.H.; Lee, J.Y.; Song, Y.J.; Kang, M.S.

    2014-01-01

    Utilization of discontinuous pn-oragnic heterojunction is introduced as a versatile method to improve charge transport in organic thin film transistors (OTFTs). The method is demonstrated by depositing n-type dioctyl perylene tetracarboxylic diimide (PTCDI-C8) discontinuously onto base p-type

  18. Pentacene organic thin film transistors with anodized gate dielectric

    NARCIS (Netherlands)

    Goettling, S.; Brill, J.; Fruehauf, N.; Pflaum, J.; Margallo-Balbás, E.

    2005-01-01

    A low temperature high quality gate dielectric process for bottom gate organic thin film transistors (OTFT) is introduced which is compatible to plastic substrates. The Al2O3 dielectric is grown from the aluminum gate electrode by anodic oxidation at room temperature and exhibits an exceptionally

  19. Carbon nanotube thin film transistors based on aerosol methods.

    Science.gov (United States)

    Zavodchikova, Marina Y; Kulmala, Tero; Nasibulin, Albert G; Ermolov, Vladimir; Franssila, Sami; Grigoras, Kestutis; Kauppinen, Esko I

    2009-02-25

    We demonstrate a fabrication method for high-performance field-effect transistors (FETs) based on dry-processed random single-walled carbon nanotube networks (CNTNs) deposited at room temperature. This method is an advantageous alternative to solution-processed and direct CVD grown CNTN FETs, which allows using various substrate materials, including heat-intolerant plastic substrates, and enables an efficient, density-controlled, scalable deposition of as-produced single-walled CNTNs on the substrate directly from the aerosol (floating catalyst) synthesis reactor. Two types of thin film transistor (TFT) structures were fabricated to evaluate the FET performance of dry-processed CNTNs: bottom-gate transistors on Si/SiO2 substrates and top-gate transistors on polymer substrates. Devices exhibited on/off ratios up to 10(5) and field-effect mobilities up to 4 cm(2) V(-1) s(-1). The suppression of hysteresis in the bottom-gate device transfer characteristics by means of thermal treatment in vacuum and passivation by an atomic layer deposited Al(2)O(3) film was investigated. A 32 nm thick Al(2)O(3) layer was found to be able to eliminate the hysteresis.

  20. Single-molecule probes in organic field-effect transistors

    NARCIS (Netherlands)

    Nicolet, Aurélien Armel Louis

    2007-01-01

    The goal of this thesis is to study charge transport phenomena in organic materials. This is done optically by means of single-molecule spectroscopy in a field-effect transistor based on a molecular crystal. We present (in Chapter 2) a fundamental requirement for single-molecule spectroscopy

  1. Field-Induced Superconductivity in Electric Double Layer Transistors

    NARCIS (Netherlands)

    Ueno, Kazunori; Shimotani, Hidekazu; Yuan, Hongtao; Ye, Jianting; Kawasaki, Masashi; Iwasa, Yoshihiro

    Electric field tuning of superconductivity has been a long-standing issue in solid state physics since the invention of the field-effect transistor (FET) in 1960. Owing to limited available carrier density in conventional FET devices, electric-field-induced superconductivity was believed to be

  2. High mobility polymer gated organic field effect transistor using zinc ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 37; Issue 1. High mobility polymer gated organic field effect transistor using zinc ... fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film prepared by chemical vapour deposition was used as the organic gate insulator. The annealing of the ...

  3. Efficient Wave Energy Amplification with Wave Reflectors

    OpenAIRE

    Kramer, Morten Mejlhede; Frigaard, Peter Bak

    2002-01-01

    Wave Energy Converters (WEC's) extract wave energy from a limited area, often a single point or line even though the wave energy is generally spread out along the wave crest. By the use of wave reflectors (reflecting walls) the wave energy is effectively focused and increased to approximately 130-140%. In the paper a procedure for calculating the efficiency and optimizing the geometry of wave reflectors are described, this by use of a 3D boundary element method. The calculations are verified ...

  4. Fabrication and characterization of heterojunction transistors

    Science.gov (United States)

    Lo, Chien-Fong

    2011-12-01

    Submircon emitter finger high-speed double heterojunction InAlAs/InGaAsSb/InGaAs bipolar transistors (DHBTs) and a variety of nitride high electron mobility transistors (HEMTs) including AlGaN/GaN, InAlN/GaN, and AlN/GaN were fabricated and characterized. DHBT structures were grown by solid source molecular beam epitaxy (SSMBE) on Fe-doped semiinsulating InP substrates and nitride HEMTs were grown with a metal organic chemical vapor deposition (MOCVD) system on sapphire or SiC substrates. AlN/GaN HEMTs were grown with a RF-VMBE on sapphire substrates. Ultra low base contact resistance of 3.7 x 10-7 ohm-cm2 after 1 min 250¢XC thermal treatment on noval InGaAsSb base of DHBTs was achieved and a long-term thermal stability of base metallization was studied. Regarding small scale DHBT fabrication, tri-layer system was introduced to improve the resolution for submicron emitter patterning and help to pile up a thicker emitter metal stack; guard-ring technique was applied around the emitter periphery in order to preserve the current gain at small emitter dimensions. Ultra low turn-on voltage and high current gain can be realized with InGaAsSb-base DHBTs as compared to the conventional InGaAs-base DHBTs. A peak current gain cutoff frequency (fT) of 268 GHz and power gain cutoff frequency (fmax) of 485 GHz were achieved. GaN-based HEMTs herein were fabricated with gate lengths from 400 nm to 1im, and were deposited Ti/Al/Ni/Au as their Ohmic contact metallization. Effects of the Ohmic contact annealing for lattice-matched InAlN/GaN HEMTs with and without a thin GaN cap layer were exhibited and their optimal annealing temperature were obtained. A maximum drain current of 1.3 A/mm and an extrinsic transconductance of 366 mS/mm were demonstrated for InAlN/GaN HEMTs with the shortest gate length. A unity-gain cutoff frequency (fT) of 69 GHz and a maximum frequency of oscillation (fmax) of 80 GHz for InAlN/GaN HEMTs were extracted from measured scattering parameters

  5. Carrier mobilities in graded InxGa1 - xAs/Al0.2Ga0.8As quantum wells for high electron mobility transistors

    Science.gov (United States)

    Strauß, U.; Bernklau, D.; Riechert, H.; Finkbeiner, S.

    1996-07-01

    We investigate modulation-doped InxGa1-xAs/AlyGa1-yAs quantum wells grown by molecular beam epitaxy with respect to carrier mobility and its dependence on In content, In distribution, populations of electron subbands, and local positions of electron wave functions. We find that the room-temperature electron mobilities are dominated by the In contents at the maxima of the electron wave functions rather than by the average In contents. At 77 K the mobilities are most strongly influenced by the distance between doping layers and the maxima of the electron wave functions. As a practical result of this study, we present a quantum well structure for high electron mobility transistors with a carrier mobility as high as 8100 cm2/V s at 295 K for an electron density of 2.5×1012 cm-2.

  6. Finite Amplitude Ocean Waves

    Indian Academy of Sciences (India)

    IAS Admin

    (2). Hence, small amplitude waves are also called linear waves. Most of the aspects of the ocean waves can be explained by the small amplitude wave theory. Let us now see the water particle motion due to waves. While wave energy is carried by the wave as it progresses forward, the water particles oscillate up and down.

  7. Shallow Water Waves and Solitary Waves

    OpenAIRE

    Hereman, Willy

    2013-01-01

    Encyclopedic article covering shallow water wave models used in oceanography and atmospheric science. Sections: Definition of the Subject; Introduction and Historical Perspective; Completely Integrable Shallow Water Wave Equations; Shallow Water Wave Equations of Geophysical Fluid Dynamics; Computation of Solitary Wave Solutions; Numerical Methods; Water Wave Experiments and Observations; Future Directions, and Bibliography.

  8. Wave groups in unidirectional surface wave models

    NARCIS (Netherlands)

    van Groesen, Embrecht W.C.

    1998-01-01

    Uni-directional wave models are used to study wave groups that appear in wave tanks of hydrodynamic laboratories; characteristic for waves in such tanks is that the wave length is rather small, comparable to the depth of the layer. In second-order theory, the resulting Nonlinear Schrödinger (NLS)

  9. Low frequency piezoresonance defined dynamic control of terahertz wave propagation.

    Science.gov (United States)

    Dutta, Moumita; Betal, Soutik; Peralta, Xomalin G; Bhalla, Amar S; Guo, Ruyan

    2016-11-30

    Phase modulators are one of the key components of many applications in electromagnetic and opto-electric wave propagations. Phase-shifters play an integral role in communications, imaging and in coherent material excitations. In order to realize the terahertz (THz) electromagnetic spectrum as a fully-functional bandwidth, the development of a family of efficient THz phase modulators is needed. Although there have been quite a few attempts to implement THz phase modulators based on quantum-well structures, liquid crystals, or meta-materials, significantly improved sensitivity and dynamic control for phase modulation, as we believe can be enabled by piezoelectric-resonance devices, is yet to be investigated. In this article we provide an experimental demonstration of phase modulation of THz beam by operating a ferroelectric single crystal LiNbO3 film device at the piezo-resonance. The piezo-resonance, excited by an external a.c. electric field, develops a coupling between electromagnetic and lattice-wave and this coupling governs the wave propagation of the incident THz beam by modulating its phase transfer function. We report the understanding developed in this work can facilitate the design and fabrication of a family of resonance-defined highly sensitive and extremely low energy sub-millimeter wave sensors and modulators.

  10. In Situ Guided Wave Structural Health Monitoring System

    Science.gov (United States)

    Zhao, George; Tittmann, Bernhard R.

    2011-01-01

    Aircraft engine rotating equipment operates at high temperatures and stresses. Noninvasive inspection of microcracks in those components poses a challenge for nondestructive evaluation. A low-cost, low-profile, high-temperature ultrasonic guided wave sensor was developed that detects cracks in situ. The transducer design provides nondestructive evaluation of structures and materials. A key feature of the sensor is that it withstands high temperatures and excites strong surface wave energy to inspect surface and subsurface cracks. The sol-gel bismuth titanate-based surface acoustic wave (SAW) sensor can generate efficient SAWs for crack inspection. The sensor is very thin (submillimeter) and can generate surface waves up to 540 C. Finite element analysis of the SAW transducer design was performed to predict the sensor behavior, and experimental studies confirmed the results. The sensor can be implemented on structures of various shapes. With a spray-coating process, the sensor can be applied to the surface of large curvatures. It has minimal effect on airflow or rotating equipment imbalance, and provides good sensitivity.

  11. Wave Dragon

    DEFF Research Database (Denmark)

    Kramer, Morten; Frigaard, Peter

    På foranledning af Löwenmark F.R.I, er der udført numeriske beregninger af Wave Dragons (herefter WD) armes effektivitet for forskellige geometriske udformninger. 5 geometriske modeller, hvor WD's arme er forkortet/forlænget er undersøgt for 3 forskellige drejninger af armene. I alt er 15...

  12. Study of performance scaling of 22-nm epitaxial delta-doped channel MOS transistor

    Science.gov (United States)

    Sengupta, Sarmista; Pandit, Soumya

    2015-06-01

    Epitaxial delta-doped channel (EδDC) profile is a promising approach for extending the scalability of bulk metal oxide semiconductor (MOS) technology for low-power system-on-chip applications. A comparative study between EδDC bulk MOS transistor with gate length Lg = 22 nm and a conventional uniformly doped channel (UDC) bulk MOS transistor, with respect to various digital and analogue performances, is presented. The study has been performed using Silvaco technology computer-aided design device simulator, calibrated with experimental results. This study reveals that at smaller gate length, EδDC transistor outperforms the UDC transistor with respect to various studied performances. The reduced contribution of the lateral electric field in the channel plays the key role in this regard. Further, the carrier mobility in EδDC transistor is higher compared to UDC transistor. For moderate gate and drain bias, the impact ionisation rate of the carriers for EδDC MOS transistor is lower than that of the UDC transistor. In addition, at 22 nm, the performances of a EδDC transistor are competitive to that of an ultra-thin body silicon-on-insulator transistor.

  13. Total dose effects on elementary transistors of a comparator in bipolar technology; Effets de la dose cumulee sur les transistors elementaires d`un comparateur en technologie bipolaire

    Energy Technology Data Exchange (ETDEWEB)

    Sarrabayrouse, G. [Centre National de la Recherche Scientifique (CNRS), 31 - Toulouse (France). Lab. d`Automatique et d`Analyse des Systemes; Bosc, J.M. [Motorola, 31 - Toulouse (France); Guerre, F.X. [Hirex Engineering, 31 - Toulouse (France)

    1995-12-31

    In the present work we investigate elementary transistors behaviour of an Integrated Circuit using junction isolation bipolar technology. Polarization conditions and dose rate effects on the main elementary transistor types are analysed. Furthermore, the IC electronic function degradations are studied. Finally, a comparison between the function degradations and the elementary component ones is attempted. (author). 10 refs.

  14. AN ALMA SURVEY OF SUBMILLIMETER GALAXIES IN THE EXTENDED CHANDRA DEEP FIELD SOUTH: NEAR-INFRARED MORPHOLOGIES AND STELLAR SIZES

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Chian-Chou; Smail, Ian; Swinbank, A. M.; Simpson, J. M.; Ma, Cheng-Jiun; Alexander, D. M.; Danielson, A. L. R.; Edge, A. C. [Institute for Computational Cosmology, Durham University, South Road, Durham DH1 3LE (United Kingdom); Biggs, A. D.; Ivison, R. J. [European Southern Observatory, Karl Schwarzschild Strasse 2, D-85748 Garching (Germany); Brandt, W. N. [Department of Astronomy and Astrophysics, 525 Davey Lab, Pennsylvania State University, University Park, PA 16802 (United States); Chapman, S. C. [Department of Physics and Atmospheric Science, Dalhousie University, Halifax, NS B3H 3J5 (Canada); Coppin, K. E. K. [Centre for Astrophysics Research, Science and Technology Research Institute, University of Hertfordshire, Hatfield AL10 9AB (United Kingdom); Dannerbauer, H. [Institut für Astrophysik, Universität Wien, Türkenschanzstraße 17, A-1180 Wien (Austria); Greve, T. R. [Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom); Karim, A. [Argelander-Institute for Astronomy, Bonn University, Auf dem Hügel 71, D-53121 Bonn (Germany); Menten, Karl M. [Max-Planck-Institut für Radioastronomie, Auf dem Hügel 69, D-53121 Bonn (Germany); Schinnerer, E.; Walter, F. [Max-Planck Institute for Astronomy, Königstuhl 17, D-69117 Heidelberg (Germany); Wardlow, J. L. [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, DK-2100 Copenhagen (Denmark); and others

    2015-02-01

    We analyze Hubble Space Telescope WFC3/H {sub 160}-band observations of a sample of 48 Atacama Large Millimeter/submillimeter Array detected submillimeter galaxies (SMGs) in the Extended Chandra Deep Field South field, to study their stellar morphologies and sizes. We detect 79% ± 17% of the SMGs in the H {sub 160}-band imaging with a median sensitivity of 27.8 mag, and most (80%) of the nondetections are SMGs with 870 μm fluxes of S {sub 870} < 3 mJy. With a surface brightness limit of μ {sub H} ∼ 26 mag arcsec{sup –2}, we find that 82% ± 9% of the H {sub 160}-band-detected SMGs at z = 1-3 appear to have disturbed morphologies, meaning they are visually classified as either irregulars or interacting systems, or both. By determining a Sérsic fit to the H {sub 160} surface brightness profiles, we derive a median Sérsic index of n = 1.2 ± 0.3 and a median half-light radius of r{sub e} = 4.4{sub −0.5}{sup +1.1} kpc for our SMGs at z = 1-3. We also find significant displacements between the positions of the H {sub 160} component and 870 μm emission in these systems, suggesting that the dusty starburst regions and less-obscured stellar distribution are not colocated. We find significant differences in the sizes and the Sérsic index between our z = 2-3 SMGs and z ∼ 2 quiescent galaxies, suggesting that a major transformation of the stellar light profile is needed in the quenching processes if SMGs are progenitors of the red-and-dead z ∼ 2 galaxies. Given the short-lived nature of SMGs, we postulate that the majority of the z = 2-3 SMGs with S {sub 870} ≳ 2 mJy are early/mid-stage major mergers.

  15. RoboWeedSupport-Semi-Automated Unmanned Aerial System for Cost Efficient High Resolution in Sub-Millimeter Scale Acquisition of Weed Images

    OpenAIRE

    Simon L. Madsen; Mads Dyrmann; Morten S. Laursen; Rasmus N. Jørgensen

    2017-01-01

    Recent advances in the Unmanned Aerial System (UAS) safety and perception systems enable safe low altitude autonomous terrain following flights recently demonstrated by the consumer DJI Mavic PRO and Phamtom 4 Pro drones. This paper presents the first prototype system utilizing this functionality in form of semi-automated UAS based collection of crop/weed images where the embedded perception system ensures a significantly safer and faster gathering of weed images with sub-millimeter resolutio...

  16. Characterization of multi-scale porous structure of fly ash/phosphate geopolymer hollow sphere structures: from submillimeter to nano-scale.

    Science.gov (United States)

    Li, Ruifeng; Wu, Gaohui; Jiang, Longtao; Sun, Dongli

    2015-01-01

    In the present work, the porous structure of fly ash/phosphate geopolymer hollow sphere structures (FPGHSS), prepared by pre-bonding and curing technology, has been characterized by multi-resolution methods from sub-millimeter to nano-scale. Micro-CT and confocal microscopy could provide the macroscopic distribution of porous structure on sub-millimeter scale, and hollow fly ashes with sphere shape and several sub-millimeter open cells with irregular shape were identified. SEM is more suitable to illustrate the distribution of micro-sized open and closed cells, and it was found that the open cells of FPGHSS were mainly formed in the interstitial porosity between fly ashes. Mercury porosimeter measurement showed that the micro-sized open cell of FPGHSS demonstrated a normal/bimodal distribution, and the peaks of pore size distribution were mainly around 100 and 10 μm. TEM observation revealed that the phosphate geopolymer was mainly composed of the porous area with nano-pores and dense areas, which were amorphous Al-O-P phase and α-Al2O3 respectively. The pore size of nano-pores demonstrated a quasi-normal distribution from about 10 to 100 nm. Therefore, detailed information of the porous structure of FPGHSS could be revealed using multiple methods. Copyright © 2014 Elsevier Ltd. All rights reserved.

  17. 60Co γ-ray induced gain degradation in bipolar junction transistors

    Science.gov (United States)

    Kulkami, S. R.; Damle, R.

    2011-03-01

    Commercial indigenously made npn and pnp bipolar junction switching transistors used for space applications are investigated for 60Co γ-ray induced effects. The on-line as well as off-line measurements indicate that the forward current gain of the transistors decreases significantly as the accumulated dose increases. Excess base current model is employed to account for the current gain degradation. The pnp transistor undergoes as much degradation as the npn type. It is found that bulk degradation by displacement damage is the dominant mechanism leading to reduction in forward current gain of npn transistors. On the other hand it appears that, in addition to bulk damage, surface degradation due to accumulation of interface states at the silicon-silicon dioxide interface also contributes significantly to gain degradation in pnp transistor as evident from thermal annealing studies. Further, estimation reveals that the transistor with larger base width has higher displacement damage factor.

  18. High-frequency noise characterization of graphene field effect transistors on SiC substrates

    Science.gov (United States)

    Yu, C.; He, Z. Z.; Song, X. B.; Liu, Q. B.; Dun, S. B.; Han, T. T.; Wang, J. J.; Zhou, C. J.; Guo, J. C.; Lv, Y. J.; Cai, S. J.; Feng, Z. H.

    2017-07-01

    Considering its high carrier mobility and high saturation velocity, a low-noise amplifier is thought of as being the most attractive analogue application of graphene field-effect transistors. The noise performance of graphene field-effect transistors at frequencies in the K-band remains unknown. In this work, the noise parameters of a graphene transistor are measured from 10 to 26 GHz and noise models are built with the data. The extrinsic minimum noise figure for a graphene transistor reached 1.5 dB, and the intrinsic minimum noise figure was as low as 0.8 dB at a frequency of 10 GHz, which were comparable with the results from tests on Si CMOS and started to approach those for GaAs and InP transistors. Considering the short development time, the current results are a significant step forward for graphene transistors and show their application potential in high-frequency electronics.

  19. Enhanced Amplification and Fan-Out Operation in an All-Magnetic Transistor.

    Science.gov (United States)

    Barman, Saswati; Saha, Susmita; Mondal, Sucheta; Kumar, Dheeraj; Barman, Anjan

    2016-09-14

    Development of all-magnetic transistor with favorable properties is an important step towards a new paradigm of all-magnetic computation. Recently, we showed such possibility in a Magnetic Vortex Transistor (MVT). Here, we demonstrate enhanced amplification in MVT achieved by introducing geometrical asymmetry in a three vortex sequence. The resulting asymmetry in core to core distance in the three vortex sequence led to enhanced amplification of the MVT output. A cascade of antivortices travelling in different trajectories including a nearly elliptical trajectory through the dynamic stray field is found to be responsible for this amplification. This asymmetric vortex transistor is further used for a successful fan-out operation, which gives large and nearly equal gains in two output branches. This large amplification in magnetic vortex gyration in magnetic vortex transistor is proposed to be maintained for a network of vortex transistor. The above observations promote the magnetic vortex transistors to be used in complex circuits and logic operations.

  20. Gravitational waves

    CERN Document Server

    Ciufolini, I; Moschella, U; Fre, P

    2001-01-01

    Gravitational waves (GWs) are a hot topic and promise to play a central role in astrophysics, cosmology, and theoretical physics. Technological developments have led us to the brink of their direct observation, which could become a reality in the coming years. The direct observation of GWs will open an entirely new field: GW astronomy. This is expected to bring a revolution in our knowledge of the universe by allowing the observation of previously unseen phenomena, such as the coalescence of compact objects (neutron stars and black holes), the fall of stars into supermassive black holes, stellar core collapses, big-bang relics, and the new and unexpected.With a wide range of contributions by leading scientists in the field, Gravitational Waves covers topics such as the basics of GWs, various advanced topics, GW detectors, astrophysics of GW sources, numerical applications, and several recent theoretical developments. The material is written at a level suitable for postgraduate students entering the field.

  1. Wave Star

    DEFF Research Database (Denmark)

    Kramer, Morten; Frigaard, Peter; Brorsen, Michael

    Nærværende rapport beskriver foreløbige hovedkonklusioner på modelforsøg udført på Aalborg Universitet, Institut for Vand, Jord og Miljøteknik med bølgeenergianlægget Wave Star i perioden 13/9 2004 til 12/11 2004.......Nærværende rapport beskriver foreløbige hovedkonklusioner på modelforsøg udført på Aalborg Universitet, Institut for Vand, Jord og Miljøteknik med bølgeenergianlægget Wave Star i perioden 13/9 2004 til 12/11 2004....

  2. Wave Propagation

    CERN Document Server

    Ferrarese, Giorgio

    2011-01-01

    Lectures: A. Jeffrey: Lectures on nonlinear wave propagation.- Y. Choquet-Bruhat: Ondes asymptotiques.- G. Boillat: Urti.- Seminars: D. Graffi: Sulla teoria dell'ottica non-lineare.- G. Grioli: Sulla propagazione del calore nei mezzi continui.- T. Manacorda: Onde nei solidi con vincoli interni.- T. Ruggeri: "Entropy principle" and main field for a non linear covariant system.- B. Straughan: Singular surfaces in dipolar materials and possible consequences for continuum mechanics

  3. Shock Waves

    CERN Document Server

    Jiang, Z

    2005-01-01

    The International Symposium on Shock Waves (ISSW) is a well established series of conferences held every two years in a different location. A unique feature of the ISSW is the emphasis on bridging the gap between physicists and engineers working in fields as different as gas dynamics, fluid mechanics and materials sciences. The main results presented at these meetings constitute valuable proceedings that offer anyone working in this field an authoritative and comprehensive source of reference.

  4. Micro-Spec: An Ultra-Compact, High-Sensitivity Spectrometer for Far-Infrared and Sub-Millimeter Astronomy

    Science.gov (United States)

    Cataldo, Giuseppe; Hsieh, Wen-Ting; Huang, Wei-Chung; Moseley, S. Harvey; Stevenson, Thomas R.; Wollack, Edward J.

    2013-01-01

    High-performance, integrated spectrometers operating in the far-infrared and sub-millimeter promise to be powerful tools for the exploration of the epochs of reionization and initial galaxy formation. These devices, using high-efficiency superconducting transmission lines, can achieve the performance of a meter-scale grating spectrometer in an instrument implemented on a four-inch silicon wafer. Such a device, when combined with a cryogenic telescope in space, provides an enabling capability for studies of the early universe. Here, the optical design process for Micro-Spec (mu-Spec) is presented, with particular attention given to its two-dimensional diffractive region, where the light of different wavelengths is focused on the different detectors. The method is based on the stigmatization and minimization of the light path function in this bounded region, which results in an optimized geometrical configuration. A point design with an efficiency of approx. 90% has been developed for initial demonstration, and can serve as the basis for future instruments. Design variations on this implementation are also discussed, which can lead to lower efficiencies due to diffractive losses in the multimode region.

  5. Fibrosis and Atrial Fibrillation: Computerized and Optical Mapping; A View into the Human Atria at Submillimeter Resolution.

    Science.gov (United States)

    Hansen, Brian J; Zhao, Jichao; Fedorov, Vadim V

    2017-06-01

    Recent studies strongly suggest that the majority of atrial fibrillation (AF) patients with diagnosed or subclinical cardiac diseases have established or even pre-existing fibrotic structural remodeling, which may lead to conduction abnormalities and reentrant activity that sustain AF. As conventional treatments fail to treat AF in far too many cases, an urgent need exists to identify specific structural arrhythmogenic fibrosis patterns, which may maintain AF, in order to identify effective ablation targets for AF treatment. However, the existing challenge is to define what exact structural remodeling within the complex 3D human atrial wall is arrhythmogenic, as well as linking arrhythmogenic fibrosis to an underlying mechanism of AF maintenance in the clinical setting. This review is focused on the role of 3D fibrosis architecture in the mechanisms of AF maintenance revealed by submillimeter, high-resolution ex-vivo imaging modalities directly of human atria, as well as from in-silico 3D computational techniques that can be able to overcome in-vivo clinical limitations. The systematic integration of functional and structural imaging ex-vivo may inform the necessary integration of electrode and structural mapping in-vivo. A holistic view of AF driver mechanisms may begin to identify the defining characteristics or "fingerprints" of reentrant AF drivers, such as 3D fibrotic architecture, in order to design optimal patient-specific ablation strategies.

  6. Microwave to Submillimeter Observations of Molecules in the Laboratory and in Space

    Science.gov (United States)

    Halfen, DeWayne

    2013-06-01

    The primary method of identifying molecular species in interstellar space is radio astronomy. Observations performed at radio telescopes are based on high-resolution laboratory measurements of the pure rotational spectrum of a molecule. With this technique, over 150 different chemical compounds have been securely detected in interstellar gas. High-resolution rotational spectra have accuracies of one part in 107 - 108, and provide the characteristic frequencies that are used to search for these species. Rotational spectra are typically recorded using direct absorption methods, Fourier transform microwave/millimeter-wave spectroscopy, and velocity modulation techniques. Also exotic synthesis methods, such as DC and AC glow discharges, pulsed supersonic jet expansions, laser ablation, and Broida-type ovens, are often required to produce these molecules. Recent laboratory and astronomical studies have expanded set of molecules that are now known in interstellar/circumstellar gas. The first negative molecular ions have been detected in cold, dark clouds and circumstellar envelopes. The iron-bearing species FeCN was also recently measured in the laboratory and discovered in the gas surrounding a carbon-rich AGB star, the first iron-containing species found in space. New observations of oxygen-rich stars have shown that metal-bearing oxides and hydroxides are also abundant circumstellar species in these environments. These new discoveries, as well as recent laboratory results for other potential interstellar species, will also be presented, in particular those for ScO, ScC2, and AlC2. In addition, the need for more measurements of metal-containing molecules will be discussed.

  7. Energy-Filtered Tunnel Transistor: A New Device Concept Toward Extremely-Low Energy Consumption Electronics

    Science.gov (United States)

    2015-12-17

    technical report 3. DATES COVERED {From - To) Apri 1 1, 2012 - September 30, 2015 4. TITLE AND SUBTITLE Energy-Filtered Tunnel Transistor : A...occurring at room temperature as well as its applications to practical devices such as room-temperature single-electron transistors and ultralow...energy consumption transistors . We have experimentally demonstrated, for the first time, that a quantum well energy level can filter out energetic

  8. Noise performance of the radio-frequency single-electron transistor

    OpenAIRE

    Roschier, Leif; Hakonen, Pertti J.; Bladh, K.; Delsing, P.; Lehnert, K. W.; Spietz, Lafe; Schoelkopf, Rob

    2004-01-01

    We have analyzed a radio-frequency single-electron-transistor (RF-SET) circuit that includes a high-electron-mobility-transistor (HEMT)amplifier, coupled to the single-electron-transistor (SET) via an impedance transformer. We consider how power is transferred between different components of the circuit, model noise components, and analyze the operating conditions of practical importance. The results are compared with experimental data on SETs. Good agreement is obtained between our noise mod...

  9. Subthreshold-swing physics of tunnel field-effect transistors

    Science.gov (United States)

    Cao, Wei; Sarkar, Deblina; Khatami, Yasin; Kang, Jiahao; Banerjee, Kaustav

    2014-06-01

    Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS) below 60 mV/decade. This letter reports a comprehensive study of the SS of TFETs by examining the effects of electrostatics and material parameters of TFETs on their SS through a physics based analytical model. Based on the analysis, an intrinsic SS degradation effect in TFETs is uncovered. Meanwhile, it is also shown that designing a strong onset condition, quantified by an introduced concept - "onset strength", for TFETs can effectively overcome this degradation at the onset stage, and thereby achieve ultra-sharp switching characteristics. The uncovered physics provides theoretical support to recent experimental results, and forward looking insight into more advanced TFET design.

  10. Subthreshold-swing physics of tunnel field-effect transistors

    Directory of Open Access Journals (Sweden)

    Wei Cao

    2014-06-01

    Full Text Available Band-to-band tunnel field-effect-transistors (TFETs are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS below 60 mV/decade. This letter reports a comprehensive study of the SS of TFETs by examining the effects of electrostatics and material parameters of TFETs on their SS through a physics based analytical model. Based on the analysis, an intrinsic SS degradation effect in TFETs is uncovered. Meanwhile, it is also shown that designing a strong onset condition, quantified by an introduced concept - “onset strength”, for TFETs can effectively overcome this degradation at the onset stage, and thereby achieve ultra-sharp switching characteristics. The uncovered physics provides theoretical support to recent experimental results, and forward looking insight into more advanced TFET design.

  11. Laser-Printed Organic Thin-Film Transistors

    KAUST Repository

    Diemer, Peter J.

    2017-09-20

    Solution deposition of organic optoelectronic materials enables fast roll-to-roll manufacturing of photonic and electronic devices on any type of substrate and at low cost. But controlling the film microstructure when it crystallizes from solution can be challenging. This represents a major limitation of this technology, since the microstructure, in turn, governs the charge transport properties of the material. Further, the solvents typically used are hazardous, which precludes their incorporation in large-scale manufacturing processes. Here, the first ever organic thin-film transistor fabricated with an electrophotographic laser printing process using a standard office laser printer is reported. This completely solvent-free additive manufacturing method allows for simultaneous deposition, purification, and patterning of the organic semiconductor layer. Laser-printed transistors using triisopropylsilylethynyl pentacene as the semiconductor layer are realized on flexible substrates and characterized, making this a successful first demonstration of the potential of laser printing of organic semiconductors.

  12. A Fast Dynamic 64-bit Comparator with Small Transistor Count

    Directory of Open Access Journals (Sweden)

    Chua-Chin Wang

    2002-01-01

    Full Text Available In this paper, we propose a 64-bit fast dynamic CMOS comparator with small transistor count. Major features of the proposed comparator are the rearrangement and re-ordering of transistors in the evaluation block of a dynamic cell, and the insertion of a weak n feedback inverter, which helps the pull-down operation to ground. The simulation results given by pre-layout tools, e.g. HSPICE, and post-layout tools, e.g. TimeMill, reveal that the delay is around 2.5 ns while the operating clock rate reaches 100 MHz. A physical chip is fabricated to verify the correctness of our design by using UMC (United Microelectronics Company 0.5 μm (2P2M technology.

  13. All 2D, high mobility, flexible, transparent thin film transistor

    Science.gov (United States)

    Das, Saptarshi; Sumant, Anirudha V.; Roelofs, Andreas

    2017-01-17

    A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material on a substrate, providing a first electrode material on top of the semiconducting channel material, patterning a source metal electrode and a drain metal electrode at opposite ends of the semiconducting channel material from the first electrode material, opening a window between the source metal electrode and the drain metal electrode, removing the first electrode material from the window located above the semiconducting channel material providing a gate dielectric above the semiconducting channel material, and providing a top gate above the gate dielectric, the top gate formed from a second electrode material. The semiconducting channel material is made of tungsten diselenide, the first electrode material and the second electrode material are made of graphene, and the gate dielectric is made of hexagonal boron nitride.

  14. Carbon Nanotube Synaptic Transistor Network for Pattern Recognition.

    Science.gov (United States)

    Kim, Sungho; Yoon, Jinsu; Kim, Hee-Dong; Choi, Sung-Jin

    2015-11-18

    Inspired by the human brain, a neuromorphic system combining complementary metal-oxide semiconductor (CMOS) and adjustable synaptic devices may offer new computing paradigms by enabling massive neural-network parallelism. In particular, synaptic devices, which are capable of emulating the functions of biological synapses, are used as the essential building blocks for an information storage and processing system. However, previous synaptic devices based on two-terminal resistive devices remain challenging because of their variability and specific physical mechanisms of resistance change, which lead to a bottleneck in the implementation of a high-density synaptic device network. Here we report that a three-terminal synaptic transistor based on carbon nanotubes can provide reliable synaptic functions that encode relative timing and regulate weight change. In addition, using system-level simulations, the developed synaptic transistor network associated with CMOS circuits can perform unsupervised learning for pattern recognition using a simplified spike-timing-dependent plasticity scheme.

  15. Electrolyte-Sensing Transistor Decals Enabled by Ultrathin Microbial Nanocellulose

    Science.gov (United States)

    Yuen, Jonathan D.; Walper, Scott A.; Melde, Brian J.; Daniele, Michael A.; Stenger, David A.

    2017-01-01

    We report an ultra-thin electronic decal that can simultaneously collect, transmit and interrogate a bio-fluid. The described technology effectively integrates a thin-film organic electrochemical transistor (sensing component) with an ultrathin microbial nanocellulose wicking membrane (sample handling component). As far as we are aware, OECTs have not been integrated in thin, permeable membrane substrates for epidermal electronics. The design of the biocompatible decal allows for the physical isolation of the electronics from the human body while enabling efficient bio-fluid delivery to the transistor via vertical wicking. High currents and ON-OFF ratios were achieved, with sensitivity as low as 1 mg·L-1.

  16. High mobility solution-processed hybrid light emitting transistors

    Science.gov (United States)

    Walker, Bright; Ullah, Mujeeb; Chae, Gil Jo; Burn, Paul L.; Cho, Shinuk; Kim, Jin Young; Namdas, Ebinazar B.; Seo, Jung Hwa

    2014-11-01

    We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm2/V s, current on/off ratios of >107, and external quantum efficiency of 10-2% at 2100 cd/m2. These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective.

  17. Thin film transistors for displays on plastic substrates

    Science.gov (United States)

    Lee, M. J.; Judge, C. P.; Wright, S. W.

    2000-08-01

    We have successfully made thin film transistors on transparent, flexible polymer substrates. These transistors have electrical properties suitable for driving the pixels in active matrix liquid crystal displays and also for building integrated row driver circuits. The devices are fabricated on polyethylene naphthalate using a low temperature CdSe process at a maximum temperature of 150°C, by evaporation and radio frequency sputtering onto unheated substrates, with pattern definition using standard photolithography and etching. Electrical properties achieved include carrier field effect mobilities of >30 cm 2/V s, threshold voltages of ˜2 V, switching ratio >10 6, an off-state leakage current of 1 μA with a gate voltage swing of <10 V, and a sub-threshold slope of 0.25 V/decade for devices of unity aspect ratio. The electrical properties were found to scale with device channel length and width.

  18. Ferroelectric field-effect transistor based on transparent oxides

    Energy Technology Data Exchange (ETDEWEB)

    Titkov, Ilya [Department of Solid State Electronics, Ioffe Institute RAS, 26, Polytechnicheskaya str., 194021 St. Petersburg (Russian Federation)], E-mail: ititkov@mail.ioffe.ru; Pronin, Igor [Department of Solid State Electronics, Ioffe Institute RAS, 26, Polytechnicheskaya str., 194021 St. Petersburg (Russian Federation)], E-mail: petrovich@mail.ioffe.ru; Delimova, Lubov [Department of Solid State Electronics, Ioffe Institute RAS, 26, Polytechnicheskaya str., 194021 St. Petersburg (Russian Federation)], E-mail: ladel@mail.ioffe.ru; Liniichuk, Ivan [Department of Solid State Electronics, Ioffe Institute RAS, 26, Polytechnicheskaya str., 194021 St. Petersburg (Russian Federation)], E-mail: liniv@mail.ioffe.ru; Grekhov, Igor [Department of Solid State Electronics, Ioffe Institute RAS, 26, Polytechnicheskaya str., 194021 St. Petersburg (Russian Federation)], E-mail: grekhov@mail.ioffe.ru

    2007-10-15

    We studied a Pb{sub x}Zr{sub 1-x}TiO{sub 3}/SnO{sub 2}/Al{sub 2}O{sub 3} heterostructure as a base for transparent ferroelectric field-effect transistor. Single-crystal SnO{sub 2}/Al{sub 2}O{sub 3} epitaxial films with the electron mobility of 25 cm{sup 2}/V were grown by pulsed laser deposition using two YAG:Nd lasers. Depletion mode transistor Au/PZT/SnO{sub 2}/Al{sub 2}O{sub 3} was produced by laser ablation and RF sputtering. All the samples demonstrate clockwise hysteresis of the source-drain characteristic. The energy distribution of traps at the PZT/SnO{sub 2} interface was determined using a modified version of a transient current method. The effect of PZT intergrain boundaries on the retention time was taken into account for experimental data discussion.

  19. Graphene-graphite oxide field-effect transistors.

    Science.gov (United States)

    Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

    2012-03-14

    Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

  20. Practical guide to organic field effect transistor circuit design

    CERN Document Server

    Sou, Antony

    2016-01-01

    The field of organic electronics spans a very wide range of disciplines from physics and chemistry to hardware and software engineering. This makes the field of organic circuit design a daunting prospect full of intimidating complexities, yet to be exploited to its true potential. Small focussed research groups also find it difficult to move beyond their usual boundaries and create systems-on-foil that are comparable with the established silicon world.This book has been written to address these issues, intended for two main audiences; firstly, physics or materials researchers who have thus far designed circuits using only basic drawing software; and secondly, experienced silicon CMOS VLSI design engineers who are already knowledgeable in the design of full custom transistor level circuits but are not familiar with organic devices or thin film transistor (TFT) devices.In guiding the reader through the disparate and broad subject matters, a concise text has been written covering the physics and chemistry of the...