Integrated flux-flow oscillators for submillimeter wave receivers

International Nuclear Information System (INIS)

Koshelets, V.P.; Shchukin, A.V.; Shitov, S.V.; Filippenko, L.V.; Fischer, G.M.; Mygind, J.

1994-01-01

A superconducting Flux-Flow Oscillator (FFO) integrated on the same chip with a small Josephson junction detector has been experimentally investigated in the frequency range 100 - 450 GHz. Both the emitted power and the frequency of the FFO can be varied by adjusting the dc bias current and/or the applied dc magnetic field. Microwave powers as high as 0.3 μW have been measured at 375 GHz. The spectral width of the FFO is about 1 MHz as estimated from harmonic mixing experiments. Also a fully integrated superconducting submillimeter wave receiver using the FFO as local oscillator has been successfully tested. The circuit included coupling transformers, a superconducting variable attenuator and a detector junction with tuned-out capacitance. (orig.)

Compact Receiver Front Ends for Submillimeter-Wave Applications

Science.gov (United States)

Mehdi, Imran; Chattopadhyay, Goutam; Schlecht, Erich T.; Lin, Robert H.; Sin, Seth; Peralta, Alejandro; Lee, Choonsup; Gill, John J.; Gulkis, Samuel; Thomas, Bertrand C.

2012-01-01

The current generation of submillimeter-wave instruments is relatively mass and power-hungry. The receiver front ends (RFEs) of a submillimeter instrument form the heart of the instrument, and any mass reduction achieved in this subsystem is propagated through the instrument. In the current implementation, the RFE consists of different blocks for the mixer and LO circuits. The motivation for this work is to reduce the mass of the RFE by integrating the mixer and LO circuits in one waveguide block. The mixer and its associated LO chips will all be packaged in a single waveguide package. This will reduce the mass of the RFE and also provide a number of other advantages. By bringing the mixer and LO circuits close together, losses in the waveguide will be reduced. Moreover, the compact nature of the block will allow for better thermal control of the block, which is important in order to reduce gain fluctuations. A single waveguide block with a 600- GHz RFE functionality (based on a subharmonically pumped Schottky diode pair) has been demonstrated. The block is about 3x3x3 cubic centimeters. The block combines the mixer and multiplier chip in a single package. 3D electromagnetic simulations were carried out to design the waveguide circuit around the mixer and multiplier chip. The circuit is optimized to provide maximum output power and maximum bandwidth. An integrated submillimeter front end featuring a 520-600-GHz sub-harmonic mixer and a 260-300-GHz frequency tripler in a single cavity was tested. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional metal-machined blocks. Measurement results on the metal block give best DSB (double sideband) mixer noise temperature of 2,360 K and conversion losses of 7.7 dB at 520 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer is between 30 and 50 mW.

Design considerations for large detector arrays on submillimeter-wave telescopes

Science.gov (United States)

Stark, Antony A.

2000-07-01

The emerging technology of large (approximately 10,000 pixel) submillimeter-wave bolometer arrays presents a novel optical design problem -- how can such arrays be fed by diffraction- limited telescope optics where the primary mirror is less than 100,000 wavelengths in diameter? Standard Cassegrain designs for radiotelescope optics exhibit focal surface curvature so large that detectors cannot be placed more than 25 beam diameters from the central ray. The problem is worse for Ritchey-Chretien designs, because these minimize coma while increasing field curvature. Classical aberrations, including coma, are usually dominated by diffraction in submillimeter- wave single dish telescopes. The telescope designer must consider (1) diffraction, (2) aberration, (3) curvature of field, (4) cross-polarization, (5) internal reflections, (6) the effect of blockages, (7) means of beam chopping on- and off-source, (8) gravitational and thermal deformations of the primary mirror, (9) the physical mounting of large detector packages, and (10) the effect of gravity and (11) vibration on those detectors. Simultaneous optimization of these considerations in the case of large detector arrays leads to telescopes that differ considerably from standard radiotelescope designs. Offset optics provide flexibility for mounting detectors, while eliminating blockage and internal reflections. Aberrations and cross-polarization can be the same as on-axis designs having the same diameter and focal length. Trade-offs include the complication of primary mirror homology and an increase in overall cost. A dramatic increase in usable field of view can be achieved using shaped optics. Solutions having one to six mirrors will be discussed, including possible six-mirror design for the proposed South Pole 10 m telescope.

Planar Submillimeter-Wave Mixer Technology with Integrated Antenna

Science.gov (United States)

Chattopadhyay, Gautam; Mehdi, Imran; Gill, John J.; Lee, Choonsup; lombart, Muria L.; Thomas, Betrand

2010-01-01

High-performance mixers at terahertz frequencies require good matching between the coupling circuits such as antennas and local oscillators and the diode embedding impedance. With the availability of amplifiers at submillimeter wavelengths and the need to have multi-pixel imagers and cameras, planar mixer architecture is required to have an integrated system. An integrated mixer with planar antenna provides a compact and optimized design at terahertz frequencies. Moreover, it leads to a planar architecture that enables efficient interconnect with submillimeter-wave amplifiers. In this architecture, a planar slot antenna is designed on a thin gallium arsenide (GaAs) membrane in such a way that the beam on either side of the membrane is symmetric and has good beam profile with high coupling efficiency. A coplanar waveguide (CPW) coupled Schottky diode mixer is designed and integrated with the antenna. In this architecture, the local oscillator (LO) is coupled through one side of the antenna and the RF from the other side, without requiring any beam sp litters or diplexers. The intermediate frequency (IF) comes out on a 50-ohm CPW line at the edge of the mixer chip, which can be wire-bonded to external circuits. This unique terahertz mixer has an integrated single planar antenna for coupling both the radio frequency (RF) input and LO injection without any diplexer or beamsplitters. The design utilizes novel planar slot antenna architecture on a 3- mthick GaAs membrane. This work is required to enable future multi-pixel terahertz receivers for astrophysics missions, and lightweight and compact receivers for planetary missions to the outer planets in our solar system. Also, this technology can be used in tera hertz radar imaging applications as well as for testing of quantum cascade lasers (QCLs).

Continuous-Wave Single-Photon Transistor Based on a Superconducting Circuit

DEFF Research Database (Denmark)

Kyriienko, Oleksandr; Sørensen, Anders Søndberg

2016-01-01

We propose a microwave frequency single-photon transistor which can operate under continuous wave probing and represents an efficient single microwave photon detector. It can be realized using an impedance matched system of a three level artificial ladder-type atom coupled to two microwave cavities...... and the appearance of a photon flux leaving the second cavity through a separate input-output port. The proposal does not require time variation of the probe signals, thus corresponding to a passive version of a single-photon transistor. The resulting device is robust to qubit dephasing processes, possesses low dark...

Plasma scattering measurement using a submillimeter wave gyrotron as a radiation source

International Nuclear Information System (INIS)

Ogawa, I.; Idehara, T.; Itakura, Y.; Myodo, M.; Hori, T.; Hatae, T.

2004-01-01

Plasma scattering measurement is an effective technique to observe low frequency density fluctuations excited in plasma. The spatial and wave number resolutions and the S/N ratio of measurement depend on the wavelength range, the size and the intensity of a probe beam. A well-collimated, submillimeter wave beam is suitable for improving the spatial and wave number resolutions. Application of high frequency gyrotron is effective in improving the S/N ratio of the measurement because of its capacity to deliver high power. Unlike the molecular vapor lasers, the gyrotrons generate diverging beam of radiation with TE mn mode structure. It is therefore necessary to convert the output radiation into a Gaussian beam. A quasi-optical antenna is a suitable element for the conversion system under consideration since it is applicable to several TE 0n and TE 1n modes. In order to apply the gyrotron to plasma scattering measurement, we have stabilized the output (P = 110 W, f = 354 GHz) of gyrotron up to the level (ΔP/P < 1 %, Δf< 10 kHz). The gyrotron output can be stabilized by decreasing the fluctuation of the cathode potential. (authors)

Solar Observations at Submillimeter Wavelengths

Science.gov (United States)

Kaufmann, P.

We review earlier to recent observational evidences and theoretical motivations leading to a renewed interest to observe flares in the submillimeter (submm) - infrared (IR) range of wavelengths. We describe the new solar dedicated submillimeter wave telescope which began operations at El Leoncito in the Argentina Andes: the SST project. It consists of focal plane arrays of two 405 GHz and four 212 GHz radiometers placed in a 1.5-m radome-enclosed Cassegrain antenna, operating simultaneously with one millisecond time resolution. The first solar events analyzed exhibited the onset of rapid submm-wave spikes (100-300 ms), well associated to other flare manifestations, especially at X-rays. The spikes positions were found scattered over the flaring source by tens of arcseconds. For one event an excellent association was found between the gamma-ray emission time profile and the rate of occurrence of submm-wave rapid spikes. The preliminary results favour the idea that bulk burst emissions are a response to numerous fast energetic injections, discrete in time, produced at different spatial positions over the flaring region. Coronal mass ejections were associated to the events studied. Their trajectories extrapolated to the solar surface appear to correspond to the onset time of the submm-wave spikes, which might represent an early signature of the CME's initial acceleration process.

New submillimeter detectors and antenna arrays

International Nuclear Information System (INIS)

Fetterman, H.R.; Reible, S.A.; Sollner, G.; Parker, C.D.

1982-01-01

Preliminary investigation has been made into the use of SIS (superconductor--insulator--superconductor) diodes for possible roles in sub-millimeter imaging systems. That is, extremely low noise, millimeter wave detectors and mixers have recently been reported which depend on single-particle tunnelling between two superconducting films separated by a thin oxide layer. The combination of excellent low-frequency sensitivity and well-developed fabrication technology make the SIS mixers particularly attractive for the systems using antenna structures and arrays in millimeter and submillimeter regions. The SIS diodes of Nb-Nb 2 O 5 -Pb showed a strong video response to the radiation which could be differentiated from the regular Josephson effect since it was not affected by a magnetic field. In exploring the three-terminal devices for possible detector and source applications in submillimeter region, the authors first determined that millimeter and submillimeter radiation could be effectively coupled to and detected in high-frequency FETs. Video response was readily obtained at 800 GHz, and carcinotron radiation at 350 GHz was mixed with the 5th harmonic of a 70 GHz klystron, producing over 45 db signal-to-noise ratio in the intermediate frequency. Since FET can function as a three-terminal oscillator simultaneously detecting submillimeter radiation or optical beats, it has interesting possibility, such as self-oscillating mixers or subharmonic local oscillators. (Wakatsuki, Y.)

An adjustable RF tuning element for microwave, millimeter wave, and submillimeter wave integrated circuits

Science.gov (United States)

Lubecke, Victor M.; Mcgrath, William R.; Rutledge, David B.

1991-01-01

Planar RF circuits are used in a wide range of applications from 1 GHz to 300 GHz, including radar, communications, commercial RF test instruments, and remote sensing radiometers. These circuits, however, provide only fixed tuning elements. This lack of adjustability puts severe demands on circuit design procedures and materials parameters. We have developed a novel tuning element which can be incorporated into the design of a planar circuit in order to allow active, post-fabrication tuning by varying the electrical length of a coplanar strip transmission line. It consists of a series of thin plates which can slide in unison along the transmission line, and the size and spacing of the plates are designed to provide a large reflection of RF power over a useful frequency bandwidth. Tests of this structure at 1 GHz to 3 Ghz showed that it produced a reflection coefficient greater than 0.90 over a 20 percent bandwidth. A 2 GHz circuit incorporating this tuning element was also tested to demonstrate practical tuning ranges. This structure can be fabricated for frequencies as high as 1000 GHz using existing micromachining techniques. Many commercial applications can benefit from this micromechanical RF tuning element, as it will aid in extending microwave integrated circuit technology into the high millimeter wave and submillimeter wave bands by easing constraints on circuit technology.

Millimeter and submillimeter wave spectroscopy: molecules of astrophysical interest

International Nuclear Information System (INIS)

Plummer, G.M.

1985-01-01

Species of three general types of molecular ions were studied by means of millimeter-submillimeter (mm/sub-mm) wave spectroscopy. Because of their highly reactive nature, it has been possible to study ionic species in the microwave region for only the past ten is presented here. A new method is presented here for production of such molecular ions in concentrations greater by one to two orders of magnitude than possible with previous techniques, and the subsequent first mm/sub/mm/ detections of two isotopic forms of HCO + , three isotopic forms of ArD + , and the molecular ion H 3 O + . Simple neutral species, which are generally less reactive than ions, are also present in relatively large concentrations in the interstellar medium and in the atmospheres of cool stars themselves. Presented here is the first laboratory microwave detection of two isotopic species of LiH 2 , a solid at normal temperatures and pressures. In addition, a combined analysis of these data, additional data collected on the related species LiD, and existing data on LiD is presented. Finally, a large fraction of the mm/sub/mm/ emissions observed toward the interstellar medium were shown to belong to a small number of relatively heavy, stable, but spectroscopically complicated molecules, many of them internal rotors

Steering of quantum waves: Demonstration of Y-junction transistors using InAs quantum wires

Science.gov (United States)

Jones, Gregory M.; Qin, Jie; Yang, Chia-Hung; Yang, Ming-Jey

2005-06-01

In this paper we demonstrate using an InAs quantum wire Y-branch switch that the electron wave can be switched to exit from the two drains by a lateral gate bias. The gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Our result suggests a new transistor function in a multiple-lead ballistic quantum wire system.

Instrumentation for Kinetic-Inductance-Detector-Based Submillimeter Radio Astronomy

Science.gov (United States)

Duan, Ran

A substantial amount of important scientific information is contained within astronomical data at the submillimeter and far-infrared (FIR) wavelengths, including information regarding dusty galaxies, galaxy clusters, and star-forming regions; however, these wavelengths are among the least-explored fields in astronomy because of the technological difficulties involved in such research. Over the past 20 years, considerable efforts have been devoted to developing submillimeter- and millimeter-wavelength astronomical instruments and telescopes. The number of detectors is an important property of such instruments and is the subject of the current study. Future telescopes will require as many as hundreds of thousands of detectors to meet the necessary requirements in terms of the field of view, scan speed, and resolution. A large pixel count is one benefit of the development of multiplexable detectors that use kinetic inductance detector (KID) technology. This dissertation presents the development of a KID-based instrument including a portion of the millimeter-wave bandpass filters and all aspects of the readout electronics, which together enabled one of the largest detector counts achieved to date in submillimeter-/millimeter-wavelength imaging arrays: a total of 2304 detectors. The work presented in this dissertation has been implemented in the MUltiwavelength Submillimeter Inductance Camera (MUSIC), a new instrument for the Caltech Submillimeter Observatory (CSO).

Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series

KAUST Repository

Elkhatib, Tamer A.; Kachorovskiǐ, Valentin Yu; Stillman, William J.; Veksler, Dmitry B.; Salama, Khaled N.; Zhang, Xicheng; Shur, Michael S.

2010-01-01

We report on enhanced room-temperature detection of terahertz radiation by several connected field-effect transistors. For this enhanced nonresonant detection, we have designed, fabricated, and tested plasmonic structures consisting of multiple InGaAs/GaAs pseudomorphic high electron-mobility transistors connected in series. Results show a 1.63-THz response that is directly proportional to the number of detecting transistors biased by a direct drain current at the same gate-to-source bias voltages. The responsivity in the saturation regime was found to be 170 V/W with the noise equivalent power in the range of 10-7 W/Hz0.5. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by terahertz radiation in the transistor channel. © 2010 IEEE.

Enhanced plasma wave detection of terahertz radiation using multiple high electron-mobility transistors connected in series

KAUST Repository

Elkhatib, Tamer A.

2010-02-01

We report on enhanced room-temperature detection of terahertz radiation by several connected field-effect transistors. For this enhanced nonresonant detection, we have designed, fabricated, and tested plasmonic structures consisting of multiple InGaAs/GaAs pseudomorphic high electron-mobility transistors connected in series. Results show a 1.63-THz response that is directly proportional to the number of detecting transistors biased by a direct drain current at the same gate-to-source bias voltages. The responsivity in the saturation regime was found to be 170 V/W with the noise equivalent power in the range of 10-7 W/Hz0.5. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by terahertz radiation in the transistor channel. © 2010 IEEE.

Icecube: Spaceflight Validation of an 874-GHz Submillimeter Wave Radiometer for Ice Cloud Remote Sensing

Science.gov (United States)

Wu, D. L.; Esper, J.; Ehsan, N.; Piepmeier, J. R.; Racette, P.

2014-12-01

Ice clouds play a key role in the Earth's radiation budget, mostly through their strong regulation of infrared radiation exchange. Submillimeter wave remote sensing offers a unique capability to improve cloud ice measurements from space. At 874 GHz cloud scattering produces a larger brightness temperature depression from cirrus than lower frequencies, which can be used to retrieve vertically-integrated cloud ice water path (IWP) and ice particle size. The objective of the IceCube project is to retire risks of 874-GHz receiver technology by raising its TRL from 5 to 7. The project will demonstrate, on a 3-U CubeSat in a low Earth orbit (LEO) environment, the 874-GHz receiver system with noise equivalent differential temperature (NEDT) of ~0.2 K for 1-second integration and calibration error of 2.0 K or less as measured from deep-space observations. The Goddard Space Flight Center (GSFC) is partnering with Virginia Diodes, Inc (VDI) to qualify commercially available 874-GHz receiver technology for spaceflight, and demonstrate the radiometer performance. The instrument (submm-wave cloud radiometer, or SCR), along with the CubeSat system developed and integrated by GSFC, will be ready for launch in two years. The instrument subsystem includes a reflector antenna, sub-millimeter wave mixer, frequency multipliers and stable local oscillator, an intermediate frequency (IF) circuit with noise injection, and data-power boards. The mixer and frequency multipliers are procured from VDI with GSFC insight into fabrication and testing processes to ensure scalability to spaceflight beyond TRL 7. The remaining components are a combination of GSFC-designed and commercial off-the-shelf (COTS) at TRLs of 5 or higher. The spacecraft system is specified by GSFC and comprises COTS components including three-axis stabilizer and sun sensor, GPS receiver, deployable solar arrays, UHF radio, and 2 GB of on-board storage. The spacecraft and instrument are integrated and flight qualified

Superconducting Hot-Electron Submillimeter-Wave Detector

Science.gov (United States)

Karasik, Boris; McGrath, William; Leduc, Henry

2009-01-01

A superconducting hot-electron bolometer has been built and tested as a prototype of high-sensitivity, rapid-response detectors of submillimeter-wavelength radiation. There are diverse potential applications for such detectors, a few examples being submillimeter spectroscopy for scientific research; detection of leaking gases; detection of explosive, chemical, and biological weapons; and medical imaging. This detector is a superconducting-transition- edge device. Like other such devices, it includes a superconducting bridge that has a low heat capacity and is maintained at a critical temperature (T(sub c)) at the lower end of its superconducting-transition temperature range. Incident photons cause transient increases in electron temperature through the superconducting-transition range, thereby yielding measurable increases in electrical resistance. In this case, T(sub c) = 6 K, which is approximately the upper limit of the operating-temperature range of silicon-based bolometers heretofore used routinely in many laboratories. However, whereas the response speed of a typical silicon- based laboratory bolometer is characterized by a frequency of the order of a kilohertz, the response speed of the present device is much higher characterized by a frequency of the order of 100 MHz. For this or any bolometer, a useful figure of merit that one seeks to minimize is (NEP)(tau exp 1/2), where NEP denotes the noise-equivalent power (NEP) and the response time. This figure of merit depends primarily on the heat capacity and, for a given heat capacity, is approximately invariant. As a consequence of this approximate invariance, in designing a device having a given heat capacity to be more sensitive (to have lower NEP), one must accept longer response time (slower response) or, conversely, in designing it to respond faster, one must accept lower sensitivity. Hence, further, in order to increase both the speed of response and the sensitivity, one must make the device very small in

Full-Wave Analysis of Traveling-Wave Field-Effect Transistors Using Finite-Difference Time-Domain Method

Directory of Open Access Journals (Sweden)

Koichi Narahara

2012-01-01

Full Text Available Nonlinear transmission lines, which define transmission lines periodically loaded with nonlinear devices such as varactors, diodes, and transistors, are modeled in the framework of finite-difference time-domain (FDTD method. Originally, some root-finding routine is needed to evaluate the contributions of nonlinear device currents appropriately to the temporally advanced electrical fields. Arbitrary nonlinear transmission lines contain large amount of nonlinear devices; therefore, it costs too much time to complete calculations. To reduce the calculation time, we recently developed a simple model of diodes to eliminate root-finding routines in an FDTD solver. Approximating the diode current-voltage relation by a piecewise-linear function, an extended Ampere's law is solved in a closed form for the time-advanced electrical fields. In this paper, we newly develop an FDTD model of field-effect transistors (FETs, together with several numerical examples that demonstrate pulse-shortening phenomena in a traveling-wave FET.

Observing ice clouds in the submillimeter spectral range: the CloudIce mission proposal for ESA's Earth Explorer 8

Directory of Open Access Journals (Sweden)

S. A. Buehler

2012-07-01

Full Text Available Passive submillimeter-wave sensors are a way to obtain urgently needed global data on ice clouds, particularly on the so far poorly characterized "essential climate variable" ice water path (IWP and on ice particle size. CloudIce was a mission proposal to the European Space Agency ESA in response to the call for Earth Explorer 8 (EE8, which ran in 2009/2010. It proposed a passive submillimeter-wave sensor with channels ranging from 183 GHz to 664 GHz. The article describes the CloudIce mission proposal, with particular emphasis on describing the algorithms for the data-analysis of submillimeter-wave cloud ice data (retrieval algorithms and demonstrating their maturity. It is shown that we have a robust understanding of the radiative properties of cloud ice in the millimeter/submillimeter spectral range, and that we have a proven toolbox of retrieval algorithms to work with these data. Although the mission was not selected for EE8, the concept will be useful as a reference for other future mission proposals.

Solar Flash Sub-Millimeter Wave Range Spectrum Part Radiation Modeling

Directory of Open Access Journals (Sweden)

V. Yu. Shustikov

2015-01-01

Full Text Available Currently, solar flares are under observation on the RT-7.5 radio telescope of BMSTU. This telescope operates in a little-studied range of the spectrum, at wavelengths of 3.2 and 2.2 mm (93 and 140 GHz, thereby providing unique information about parameters of the chromosphere plasma and zone of the temperature minimum. Observations on various instruments provided relatively small amount of data on the radio emission flare at frequencies close to 93 GHz, and at frequency of 140 GHz such observations were not carried out. For these reasons, data collected from the RT-7.5 radio telescope are of high value (Shustikov et al., 2012.This work describes modeling and gives interpretation of the reason for raising flux density spectrum of sub-millimeter radio frequency emission using as an example the GOES flare of class M 5.3 occurred on 04.07.2012 in the active region 11515. This flare was observed on the RT-7.5 radio telescope of BMSTU and was described by Shustikov et al. (2012 and by Smirnova et al. (2013, where it has been suggested that the reason for raising radio frequency emission is a bremsstrahlung of the thermal electrons in the hot plasma of the solar chromosphere. Rough estimates of the plasma temperature at the flare source were obtained.This paper proposes model calculations of the flux density spectrum of the sub-millimeter radio emission based on the gyrosynchrotron Fleischman-Kuznetsov code (Fleishman & Kuznetsov, 2010. Section 1 briefly describes observational data, tools and processing methods used in the work. Section 2 shows results of modeling the flare radio emission. Section 3 discusses results and conclusions.Numerical modeling the sub-millimeter part of the spectrum of the radio flux density for the GOES flare of class M5.3 has been carried out. This flare occurred in the active region 11515 on 04.07.2012. Modeling was based on the observations on the BMSTU’s RT-7.5 radio telescope.The paper draws conclusion based on the

Submillimeter molecular spectroscopy with the Texas millimeter wave observatory radio telescope

International Nuclear Information System (INIS)

Loren, R.B.; Wootten, A.; National Radio Astronomy Observatory, Charlottesville, VA)

1986-01-01

A large number of previously unreported molecular transitions have been detected in the submillimeter wavelength band toward OMC-1 and M17 SW using the Texas 4.9 m radio antenna. The emission components in OMC-1 that come from the unresolved plateau and hot core regions are stronger in these higher energy transitions than in the lower-energy, lower-frequency lines. Intense, probably thermalized high J SiO lines require a very hot core if they arise in a region the same size as that mapped in J = 2-1 SiO by interferometer measurements. Despite the high energy levels of the submillimeter lines of CN and CCH, there is no broad emission component evident, consistent with their greatly reduced abundance due to removal by chemical reactions. 33 references

Millimeter and Submillimeter Wave Spectroscopy of Higher Energy Conformers of 1,2-PROPANEDIOL

Science.gov (United States)

Zakharenko, Olena; Bossa, Jean-Baptiste; Lewen, Frank; Schlemmer, Stephan; Müller, Holger S. P.

2017-06-01

We have performed a study of the millimeter/submillimeter wave spectrum of four higher energy conformers of 1,2-propanediol (continuation of the previous study on the three lowest energy conformers. The present analysis of rotational transitions carried out in the frequency range 38 - 400 GHz represents a significant extension of previous microwave work. The new data were combined with previously-measured microwave transitions and fitted using a Watson's S-reduced Hamiltonian. The final fits were within experimental accuracy, and included spectroscopic parameters up to sixth order of angular momentum, for the ground states of the four higher energy conformers following previously studied ones: g'Ga, gG'g', aGg' and g'Gg. The present analysis provides reliable frequency predictions for astrophysical detection of 1,2-propanediol by radio telescope arrays at millimeter wavelengths. J.-B. Bossa, M.H. Ordu, H.S.P. Müller, F. Lewen, S. Schlemmer, A&A 570 (2014) A12)

Planetary submillimeter spectroscopy

Science.gov (United States)

Klein, M. J.

1988-01-01

The aim is to develop a comprehensive observational and analytical program to study solar system physics and meterology by measuring molecular lines in the millimeter and submillimeter spectra of planets and comets. A primary objective is to conduct observations with new JPL and Caltech submillimeter receivers at the Caltech Submillimeter Observatory (CSO) on Mauna Kea, Hawaii. A secondary objective is to continue to monitor the time variable planetary phenomena (e.g., Jupiter and Uranus) at centimeter wavelength using the NASA antennas of the Deep Space Network (DSN).

Diode, transistor & fet circuits manual

CERN Document Server

Marston, R M

2013-01-01

Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

Distributed amplifier using Josephson vortex flow transistors

International Nuclear Information System (INIS)

McGinnis, D.P.; Beyer, J.B.; Nordman, J.E.

1986-01-01

A wide-band traveling wave amplifier using vortex flow transistors is proposed. A vortex flow transistor is a long Josephson junction used as a current controlled voltage source. The dual nature of this device to the field effect transistor is exploited. A circuit model of this device is proposed and a distributed amplifier utilizing 50 vortex flow transistors is predicted to have useful gain to 100 GHz

Millimeter-wave small-signal modeling with optimizing sensitive-parameters for metamorphic high electron mobility transistors

International Nuclear Information System (INIS)

Moon, S-W; Baek, Y-H; Han, M; Rhee, J-K; Kim, S-D; Oh, J-H

2010-01-01

In this paper, we present a simple and reliable technique for determining the small-signal equivalent circuit model parameters of the 0.1 µm metamorphic high electron mobility transistors (MHEMTs) in a millimeter-wave frequency range. The initial eight extrinsic parameters of the MHEMT are extracted using two S-parameter (scattering parameter) sets measured under the pinched-off and zero-biased cold field-effect transistor conditions by avoiding the forward gate biasing. Furthermore, highly calibration-sensitive values of the R s , L s and C pd are optimized by using a gradient optimization method to improve the modeling accuracy. The accuracy enhancement of this procedure is successfully verified with an excellent correlation between the measured and calculated S-parameters up to 65 GHz

A retrieval algorithm of hydrometer profile for submillimeter-wave radiometer

Science.gov (United States)

Liu, Yuli; Buehler, Stefan; Liu, Heguang

2017-04-01

Vertical profiles of particle microphysics perform vital functions for the estimation of climatic feedback. This paper proposes a new algorithm to retrieve the profile of the parameters of the hydrometeor(i.e., ice, snow, rain, liquid cloud, graupel) based on passive submillimeter-wave measurements. These parameters include water content and particle size. The first part of the algorithm builds the database and retrieves the integrated quantities. Database is built up by Atmospheric Radiative Transfer Simulator(ARTS), which uses atmosphere data to simulate the corresponding brightness temperature. Neural network, trained by the precalculated database, is developed to retrieve the water path for each type of particles. The second part of the algorithm analyses the statistical relationship between water path and vertical parameters profiles. Based on the strong dependence existing between vertical layers in the profiles, Principal Component Analysis(PCA) technique is applied. The third part of the algorithm uses the forward model explicitly to retrieve the hydrometeor profiles. Cost function is calculated in each iteration, and Differential Evolution(DE) algorithm is used to adjust the parameter values during the evolutionary process. The performance of this algorithm is planning to be verified for both simulation database and measurement data, by retrieving profiles in comparison with the initial one. Results show that this algorithm has the ability to retrieve the hydrometeor profiles efficiently. The combination of ARTS and optimization algorithm can get much better results than the commonly used database approach. Meanwhile, the concept that ARTS can be used explicitly in the retrieval process shows great potential in providing solution to other retrieval problems.

Submillimeter-wave measurements of the pressure broadening of BrO

International Nuclear Information System (INIS)

Yamada, M.M.; Kobayashi, M.; Habara, H.; Amano, T.; Drouin, B.J.

2003-01-01

The N 2 and O 2 pressure broadening coefficients of the J=23.5 ↔ 22.5 and J=25.5 ↔ 24.5 rotational transitions in the ground vibronic state X 2 Π 3/2 of 81 BrO at 624.768 and 650.178 GHz have been independently measured at Ibaraki University and Jet Propulsion Laboratory. These lines are expected to be monitored by the superconducting submillimeter-wave limb emission sounder in the Japanese Experiment Module on the International Space Station (JEM/SMILES) as well as the earth observing system microwave limb sounder (EOS-MLS). This work provides temperature-dependent pressure broadening parameters of BrO needed by the space station and satellite based observations. The BrO pressure broadening coefficients and their 1σ uncertainties are: γ 0 (N 2 )=3.24±0.05 MHz/Torr and γ 0 (O 2 )=2.33±0.06 MHz/Torr for the 624.768 GHz transition at room temperature (296 K). For the 650.178 GHz line, the results are: γ 0 (N 2 )=3.20±0.07 MHz/Torr and γ 0 (O 2 )=2.41±0.06 MHz/Torr. The temperature dependence exponents and their 1σ error are determined to be: n(N 2 )=-0.76±0.05 and n(O 2 )=-0.93±0.07 for the 624.768 GHz transition, and n(N 2 )=-0.84±0.07 and n(O 2 )=-0.70±0.07 for the 650.178 GHz transition

Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels

International Nuclear Information System (INIS)

Shiktorov, P; Starikov, E; Gružinskis, V; Varani, L; Sabatini, G; Marinchio, H; Reggiani, L

2009-01-01

In the framework of analytical and hydrodynamic models for the description of carrier transport and noise in high electron mobility transistor/field-effect transistor channels the main features of the intrinsic noise of transistors are investigated under continuous branching of the current between channel and gate. It is shown that the current-noise and voltage-noise spectra at the transistor terminals contain an excess noise related to thermal excitation of plasma wave modes in the dielectric layer between the channel and gate. It is found that the set of modes of excited plasma waves can be governed by the external embedding circuits, thus violating a universal description of noise in terms of Norton and Thevenin noise generators

Dielectric Covered Planar Antennas at Submillimeter Wavelengths for Terahertz Imaging

Science.gov (United States)

Chattopadhyay, Goutam; Gill, John J.; Skalare, Anders; Lee, Choonsup; Llombart, Nuria; Siegel, Peter H.

2011-01-01

Most optical systems require antennas with directive patterns. This means that the physical area of the antenna will be large in terms of the wavelength. When non-cooled systems are used, the losses of microstrip or coplanar waveguide lines impede the use of standard patch or slot antennas for a large number of elements in a phased array format. Traditionally, this problem has been solved by using silicon lenses. However, if an array of such highly directive antennas is to be used for imaging applications, the fabrication of many closely spaced lenses becomes a problem. Moreover, planar antennas are usually fed by microstrip or coplanar waveguides while the mixer or the detector elements (usually Schottky diodes) are coupled in a waveguide environment. The coupling between the antenna and the detector/ mixer can be a fabrication challenge in an imaging array at submillimeter wavelengths. Antennas excited by a waveguide (TE10) mode makes use of dielectric superlayers to increase the directivity. These antennas create a kind of Fabry- Perot cavity between the ground plane and the first layer of dielectric. In reality, the antenna operates as a leaky wave mode where a leaky wave pole propagates along the cavity while it radiates. Thanks to this pole, the directivity of a small antenna is considerably enhanced. The antenna consists of a waveguide feed, which can be coupled to a mixer or detector such as a Schottky diode via a standard probe design. The waveguide is loaded with a double-slot iris to perform an impedance match and to suppress undesired modes that can propagate on the cavity. On top of the slot there is an air cavity and on top, a small portion of a hemispherical lens. The fractional bandwidth of such antennas is around 10 percent, which is good enough for heterodyne imaging applications.The new geometry makes use of a silicon lens instead of dielectric quarter wavelength substrates. This design presents several advantages when used in the submillimeter-wave

Predictive of the quantum capacitance effect on the excitation of plasma waves in graphene transistors with scaling limit.

Science.gov (United States)

Wang, Lin; Chen, Xiaoshuang; Hu, Yibin; Wang, Shao-Wei; Lu, Wei

2015-04-28

Plasma waves in graphene field-effect transistors (FETs) and nano-patterned graphene sheets have emerged as very promising candidates for potential terahertz and infrared applications in myriad areas including remote sensing, biomedical science, military, and many other fields with their electrical tunability and strong interaction with light. In this work, we study the excitations and propagation properties of plasma waves in nanometric graphene FETs down to the scaling limit. Due to the quantum-capacitance effect, the plasma wave exhibits strong correlation with the distribution of density of states (DOS). It is indicated that the electrically tunable plasma resonance has a power-dependent V0.8 TG relation on the gate voltage, which originates from the linear dependence of density of states (DOS) on the energy in pristine graphene, in striking difference to those dominated by classical capacitance with only V0.5 TG dependence. The results of different transistor sizes indicate the potential application of nanometric graphene FETs in highly-efficient electro-optic modulation or detection of terahertz or infrared radiation. In addition, we highlight the perspectives of plasma resonance excitation in probing the many-body interaction and quantum matter state in strong correlation electron systems. This study reveals the key feature of plasma waves in decorated/nanometric graphene FETs, and paves the way to tailor plasma band-engineering and expand its application in both terahertz and mid-infrared regions.

Submillimeter Array (SMA) Newsletter August 2011

OpenAIRE

Blundell, Raymond

2011-01-01

Submillimeter Array (SMA) Newsletter August 2011 Blundell, Raymond Submillimeter Array Newsletter | Number 12 | August 2011 CONTENTS 1 From the Director SCIENCE HIGHLIGHTS: 2 Faint Submillimeter Sources behind Massive Lensing Clusters 5 Millimeter Imaging of the β Pictoris Debris Disk: Evidence for a Planetesimal Belt 7 Physical Properties of the Circumnuclear Starburst Ring in the Barred Galaxy NGC1097 TECHNICAL HIGHLIGHTS: 9 ...

Pre-HEAT: submillimeter site testing and astronomical spectra from Dome A, Antarctica

Science.gov (United States)

Kulesa, C. A.; Walker, C. K.; Schein, M.; Golish, D.; Tothill, N.; Siegel, P.; Weinreb, S.; Jones, G.; Bardin, J.; Jacobs, K.; Martin, C. L.; Storey, J.; Ashley, M.; Lawrence, J.; Luong-Van, D.; Everett, J.; Wang, L.; Feng, L.; Zhu, Z.; Yan, J.; Yang, J.; Zhang, X.-G.; Cui, X.; Yuan, X.; Hu, J.; Xu, Z.; Jiang, Z.; Yang, H.; Li, Y.; Sun, B.; Qin, W.; Shang, Z.

2008-07-01

Pre-HEAT is a 20 cm aperture submillimeter-wave telescope with a 660 GHz (450 micron) Schottky diode heterodyne receiver and digital FFT spectrometer for the Plateau Observatory (PLATO) developed by the University of New South Wales. In January 2008 it was deployed to Dome A, the summit of the Antarctic plateau, as part of a scientific traverse led by the Polar Research Institute of China and the Chinese Academy of Sciences. Dome A may be one of the best sites in the world for ground based Terahertz astronomy, based on the exceptionally cold, dry and stable conditions which prevail there. Pre-HEAT is measuring the 450 micron sky opacity at Dome A and mapping the Galactic Plane in the 13CO J=6-5 line, constituting the first submillimeter measurements from Dome A. It is field-testing many of the key technologies for its namesake -- a successor mission called HEAT: the High Elevation Antarctic Terahertz telescope. Exciting prospects for submillimeter astronomy from Dome A and the status of Pre-HEAT will be presented.

Calculation of the electron wave function in a graded-channel double-heterojunction modulation-doped field-effect transistor

Science.gov (United States)

Mui, D. S. L.; Patil, M. B.; Morkoc, H.

1989-01-01

Three double-heterojunction modulation-doped field-effect transistor structures with different channel composition are investigated theoretically. All of these transistors have an In(x)Ga(1-x)As channel sandwiched between two doped Al(0.3)Ga(0.7)As barriers with undoped spacer layers. In one of the structures, x varies from 0 from either heterojunction to 0.15 at the center of the channel quadratically; in the other two, constant values of x of 0 and 0.15 are used. The Poisson and Schroedinger equations are solved self-consistently for the electron wave function in all three cases. The results showed that the two-dimensional electron gas (2DEG) concentration in the channel of the quadratically graded structure is higher than the x = 0 one and slightly lower than the x = 0.15 one, and the mean distance of the 2DEG is closer to the center of the channel for this transistor than the other two. These two effects have important implications on the electron mobility in the channel.

Demonstration of Submillimeter Astrophysics Technology at Caltech Submillimeter Observatory

Data.gov (United States)

National Aeronautics and Space Administration — Detector technology developments will determine the science product of future astrophysics missions and projects, and this is especially true at submillimeter...

Design of Integrated Circuits Approaching Terahertz Frequencies

OpenAIRE

Yan, Lei; Johansen, Tom Keinicke

2013-01-01

In this thesis, monolithic microwave integrated circuits(MMICs) are presented for millimeter-wave and submillimeter-wave or terahertz(THz) applications. Millimeter-wave power generation from solid state devices is not only crucial for the emerging high data rate wireless communications but also important for driving THz signal sources. To meet the requirement of high output power, amplifiers based on InP double heterojunction bipolar transistor (DHBT) devices from the III-V Lab in Marcoussic,...

Report of the submillimeter splinter group

Science.gov (United States)

Harris, A. I.; Lequeux, J.

1992-12-01

The aim of the submillimeter splinter group of the LIST (Lunar Interferometry Study Team) was to examine the scientific and technical aspects of a submillimeter interferometer with an emphasis on heterodyne detection. The main elements of the scientific logic that lead to the conclusions that a heterodyne submillimeter array should have a collecting area of at order 1000 sq m are summarized. This conclusion is based on sensitivity constraints and the following points: anything that can be done from the ground, will be; an instrument as complex and expensive as a large submillimeter interferometer must be capable of significant extragalactic observations; and no matter what the future scientific trends are, looking at the main coolants will always be important. It is clear that an instrument of this size is several steps past the next generation of spaceborne observatories.

SUBMILLIMETER LIGHTCURVES OF ASTEROIDS V1.0

Data.gov (United States)

National Aeronautics and Space Administration — Submillimeter lightcurves of large asteroids Ceres, Davida, Io, Juno, Pallas, Vesta, and Victoria, observed at the Heinrich-Hertz Submillimeter Telescope from...

Prospects for ion temperature measurements in JET by Thomson scattering of submillimetre waves

International Nuclear Information System (INIS)

Whitbourn, L.B.

1975-03-01

The Thomson scattering of submillimeter waves is envisaged as a possible means for measuring the ion temperature of the JET plasma. The present discussion is principally concerned with the practical limitations imposed to the method by the availability of high power pulsed sources and sensitive detectors and noise due to plasma emission at submillimeter wavelengths (bremsstrahlung and electron cyclotron emission). Coherent scattering from plasma wave (e.g. ion acoustic waves and electron drift waves) with millimeter and submillimeter waves are considered briefly. Further suitable development of lasers and heterodyne detectors would make such measurements possible. A pulsed HCN laser associated with a detectors with a lower heterodyne noise equivalent power could then be used to advantage. For scattering with CH 3 F laser the NEP of a Josephson junction would be adequate because a relatively high level of plasma emission is expected at 496 μm [fr

Monolithic acoustic graphene transistors based on lithium niobate thin film

Science.gov (United States)

Liang, J.; Liu, B.-H.; Zhang, H.-X.; Zhang, H.; Zhang, M.-L.; Zhang, D.-H.; Pang, W.

2018-05-01

This paper introduces an on-chip acoustic graphene transistor based on lithium niobate thin film. The graphene transistor is embedded in a microelectromechanical systems (MEMS) acoustic wave device, and surface acoustic waves generated by the resonator induce a macroscopic current in the graphene due to the acousto-electric (AE) effect. The acoustic resonator and the graphene share the lithium niobate film, and a gate voltage is applied through the back side of the silicon substrate. The AE current induced by the Rayleigh and Sezawa modes was investigated, and the transistor outputs a larger current in the Rayleigh mode because of a larger coupling to velocity ratio. The output current increases linearly with the input radiofrequency power and can be effectively modulated by the gate voltage. The acoustic graphene transistor realized a five-fold enhancement in the output current at an optimum gate voltage, outperforming its counterpart with a DC input. The acoustic graphene transistor demonstrates a paradigm for more-than-Moore technology. By combining the benefits of MEMS and graphene circuits, it opens an avenue for various system-on-chip applications.

LDR: A submillimeter great observatory

Science.gov (United States)

Wilson, Robert

1990-12-01

The Large Deployable Reflector (LDR), a high Earth orbit free flying 10 to 20 m diameter deployable telescope, is described. The LDR is intended for use throughout the submillimeter band, using imaging receivers with unprecedented sensitivity and angular resolution. Its mission is to produce pictures of line emission regions in the solar neighborhood, in nearby galaxies and in objects at the edge of the known galaxy distribution. It is predicted to be an ideal instrument for exploring the first galaxies and protogalaxies as the submillimeter cooling lines should light up as soon as metals form.

Submillimetre-wave astronomy

International Nuclear Information System (INIS)

Beckman, J.E.; Phillips, J.P.

1982-01-01

Observations in the 100-1000-micron band and the instruments used to obtain them are discussed in contributions to the Submillimeter Wave Astronomy Conference held at Queen Mary College, London, in September 1981. The major subject areas covered are large-scale structure and radiative transfer within interstellar clouds, spectroscopic observations of molecular sources, interstellar chemistry, and submillimeter (SM) instrumentation. Reports are included on the formation of giant cloud complexes, cool molecular clouds, models for hot-centered and externally heated clouds, dust in Bok globules, airborne FIR and SM spectroscopy, rotational transitions of CH3OH and NH2 near 1.2 mm, high-velocity flows and molecular jets, FIR emissions from late-type galaxies, ion-grain collisions as a source of interstellar molecules, bandpass filters for SM astronomy, the SM receiver of the future, HF techniques in heterodyne astronomy, and the mm-wave cosmic background

Interferometric investigation methods of plasma spatial characteristics on stellarators and tokamaks in submillimeter region

International Nuclear Information System (INIS)

Berezhnyj, V.L.; Kononenko, V.I.; Epishin, V.A.; Topkov, A.N.

1992-01-01

The review of interferometric methods of plasma investigation in the wave submillimeter range is given. The diagnostic schemes in stellarators and tokamaks designed for experienced thermonuclear reactors and also the perspective ones, which are still out of practice, are shown. The methods of these diagnostics, their physical principles, the main possibilities and restrictions at changes of electron density, magnetic fields (currents) and their spatial distributions are described. 105 refs.; 9 figs.; 2 tables. (author)

Transistor Effect in Improperly Connected Transistors.

Science.gov (United States)

Luzader, Stephen; Sanchez-Velasco, Eduardo

1996-01-01

Discusses the differences between the standard representation and a realistic representation of a transistor. Presents an experiment that helps clarify the explanation of the transistor effect and shows why transistors should be connected properly. (JRH)

The Submillimeter Telescope (SMT) project

International Nuclear Information System (INIS)

Martin, R.N.; Baars, J.W.M.

1990-01-01

To exploit the potential of submillimeter astronomy, the Submillimeter Telescope (SMT) will be located at an altitude of 3178 meters on Emerald Peak 75 miles northeast of Tucson in Southern Arizona. The instrument is an altazimuth mounted f/13.8 Cassegrain homology telescope with two Nasmyth and bent Cassegrain foci. It will have diffraction limited performance at a wavelength of 300 microns and an operating overall figure accuracy of 15 microns rms. An important feature of the SMT is the construction of the primary and secondary reflectors out of aluminum-core CFRP face sheet sandwich panels, and the reflector backup structure and secondary support out of CFRP structural elements. This modern technology provides both a means for reaching the required precision of the SMT for both night and day operation (basically because of the low coefficient of thermal expansion and high strength-to-weight ratio of CFRP) and a potential route for the realization of lightweight telescopes of even greater accuracy in the future. The SMT will be the highest accuracy radio telescope ever built (at least a factor of 2 more accurate than existing telescopes). In addition, the SMT will be the first 10 m-class submillimeter telescope with a surface designed for efficient measurements at the important 350 microns wavelength atmospheric window. 9 refs

Magnon transistor for all-magnon data processing.

Science.gov (United States)

Chumak, Andrii V; Serga, Alexander A; Hillebrands, Burkard

2014-08-21

An attractive direction in next-generation information processing is the development of systems employing particles or quasiparticles other than electrons--ideally with low dissipation--as information carriers. One such candidate is the magnon: the quasiparticle associated with the eigen-excitations of magnetic materials known as spin waves. The realization of single-chip all-magnon information systems demands the development of circuits in which magnon currents can be manipulated by magnons themselves. Using a magnonic crystal--an artificial magnetic material--to enhance nonlinear magnon-magnon interactions, we have succeeded in the realization of magnon-by-magnon control, and the development of a magnon transistor. We present a proof of concept three-terminal device fabricated from an electrically insulating magnetic material. We demonstrate that the density of magnons flowing from the transistor's source to its drain can be decreased three orders of magnitude by the injection of magnons into the transistor's gate.

SOI Transistor measurement techniques using body contacted transistors

International Nuclear Information System (INIS)

Worley, E.R.; Williams, R.

1989-01-01

Measurements of body contacted SOI transistors are used to isolate parameters of the back channel and island edge transistor. Properties of the edge and back channel transistor have been measured before and after X-ray irradiation (ARACOR). The unique properties of the edge transistor are shown to be a result of edge geometry as confirmed by a two dimensional transistor simulator

Transistor data book

International Nuclear Information System (INIS)

1988-03-01

It introduces how to use this book. It lists transistor data and index, which are Type No, Cross index, Germanium PNP low power transistors, silicon NPN low power transistors, Germanium PNP high power transistors, Switching transistors, transistor arrays, Miscellaneous transistors, types with U.S military specifications, direct replacement transistors, suggested replacement transistors, schematic drawings, outline drawings, device number keys and manufacturer's logos.

Plasma Wave Electronic Terahertz Technology

National Research Council Canada - National Science Library

Shur, Michael

2003-01-01

Plasma waves are oscillations of electron density in time and space. In deep submicron field effect transistors plasma wave frequencies lie in the terahertz range and can be tuned by applied gate bias...

Development Of A Multicolor Sub/millimeter Camera Using Microwave Kinetic Inductance Detectors

Science.gov (United States)

Schlaerth, James A.; Czakon, N. G.; Day, P. K.; Downes, T. P.; Duan, R.; Glenn, J.; Golwala, S. R.; Hollister, M. I.; LeDuc, H. G.; Maloney, P. R.; Mazin, B. A.; Noroozian, O.; Sayers, J.; Siegel, S.; Vayonakis, A.; Zmuidzinas, J.

2011-01-01

Microwave Kinetic Inductance Detectors (MKIDs) are superconducting resonators useful for detecting light from the millimeter-wave to the X-ray. These detectors are easily multiplexed, as the resonances can be tuned to slightly different frequencies, allowing hundreds of detectors to be read out simultaneously using a single feedline. The Multicolor Submillimeter Inductance Camera, MUSIC, will use 2304 antenna-coupled MKIDs in multicolor operation, with bands centered at wavelengths of 0.85, 1.1, 1.3 and 2.0 mm, beginning in 2011. Here we present the results of our demonstration instrument, DemoCam, containing a single 3-color array with 72 detectors and optics similar to MUSIC. We present sensitivities achieved at the telescope, and compare to those expected based upon laboratory tests. We explore the factors that limit the sensitivity, in particular electronics noise, antenna efficiency, and excess loading. We discuss mitigation of these factors, and how we plan to improve sensitivity to the level of background-limited performance for the scientific operation of MUSIC. Finally, we note the expected mapping speed and contributions of MUSIC to astrophysics, and in particular to the study of submillimeter galaxies. This research has been funded by grants from the National Science Foundation, the Gordon and Betty Moore Foundation, and the NASA Graduate Student Researchers Program.

Transistorized PWM inverter-induction motor drive system

Science.gov (United States)

Peak, S. C.; Plunkett, A. B.

1982-01-01

This paper describes the development of a transistorized PWM inverter-induction motor traction drive system. A vehicle performance analysis was performed to establish the vehicle tractive effort-speed requirements. These requirements were then converted into a set of inverter and motor specifications. The inverter was a transistorized three-phase bridge using General Electric power Darlington transistors. The description of the design and development of this inverter is the principal object of this paper. The high-speed induction motor is a design which is optimized for use with an inverter power source. The primary feedback control is a torque angle control with voltage and torque outer loop controls. A current-controlled PWM technique is used to control the motor voltage. The drive has a constant torque output with PWM operation to base motor speed and a constant horsepower output with square wave operation to maximum speed. The drive system was dynamometer tested and the results are presented.

Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications

Science.gov (United States)

Cywiński, G.; Yahniuk, I.; Kruszewski, P.; Grabowski, M.; Nowakowski-Szkudlarek, K.; Prystawko, P.; Sai, P.; Knap, W.; Simin, G. S.; Rumyantsev, S. L.

2018-03-01

We report on a design of fin-shaped channel GaN/AlGaN field-effect transistors developed for studying resonant terahertz plasma oscillations. Unlike common two dimensional FinFET transistor design, the gates were deposited only to the sides of the two dimensional electron gas channel, i.e., metal layers were not deposited on the top of the AlGaN. This side gate configuration allowed us to electrically control the conductivity of the channel by changing its width while keeping the carrier density and mobility virtually unchanged. Computer simulations and analytical model describe well the general shape of the characteristics. The side gate control of the channel width of these transistors allowed us to eliminate the so-called oblique plasma wave modes and paves the way towards future terahertz detectors and emitters using high quality factor plasma wave resonances.

Submillimeter laboratory identification of CH{sup +} and CH{sub 2}D{sup +}

Energy Technology Data Exchange (ETDEWEB)

Amano, T. [Department of Chemistry and Department of Physics and Astronomy, University of Waterloo, Waterloo, ON N2L 3G1 (Canada)

2015-01-22

Laboratory identification of two basic and important interstellar molecular ions is presented. The J = 1 - 0 rotational transition of {sup 12}CH{sup +} together with those of {sup 13}CH{sup +} and {sup 12}CD{sup +} was observed in the laboratory. The newly obtained frequencies were found to be different from those reported previously. Various experimental evidences firmly support the new measurements. In addition, the Zeeman effect and the spin-rotation hyperfine interaction enforce the laboratory identification with no ambiguity. Rotational lines of CH{sub 2}D{sup +} were observed in the submillimeter-wave region. This laboratory observation is consistent with a recent tentative identification of CH{sub 2}D{sup +} toward Ori IRc2.

Submillimeter heterodyne arrays for APEX

NARCIS (Netherlands)

Güsten, R.; Baryshev, A.; Bell, A.; Belloche, A.; Graf, U.; Hafok, H.; Heyminck, S.; Hochgürtel, S.; Honingh, C. E.; Jacobs, K.; Kasemann, C.; Klein, B.; Klein, T.; Korn, A.; Krämer, I.; Leinz, C.; Lundgren, A.; Menten, K. M.; Meyer, K.; Muders, D.; Pacek, F.; Rabanus, D.; Schäfer, F.; Schilke, P.; Schneider, G.; Stutzki, J.; Wieching, G.; Wunsch, A.; Wyrowski, F.

2008-01-01

We report on developments of submillimeter heterodyne arrays for high resolution spectroscopy with APEX. Shortly, we will operate state-of-the-art instruments in all major atmospheric windows accessible from Llano de Chajnantor. CHAMP+, a dual-color 2×7 element heterodyne array for operation in the

Microwave, Millimeter, Submillimeter, and Far Infrared Spectral Databases

Science.gov (United States)

Pearson, J. C.; Pickett, H. M.; Drouin, B. J.; Chen, P.; Cohen, E. A.

2002-01-01

The spectrum of most known astrophysical molecules is derived from transitions between a few hundred to a few hundred thousand energy levels populated at room temperature. In the microwave and millimeter wave regions. spectroscopy is almost always performed with traditional microwave techniques. In the submillimeter and far infrared microwave technique becomes progressively more technologically challenging and infrared techniques become more widely employed as the wavelength gets shorter. Infrared techniques are typically one to two orders of magnitude less precise but they do generate all the strong features in the spectrum. With microwave technique, it is generally impossible and rarely necessary to measure every single transition of a molecular species, so careful fitting of quantum mechanical Hamiltonians to the transitions measured are required to produce the complete spectral picture of the molecule required by astronomers. The fitting process produces the most precise data possible and is required in the interpret heterodyne observations. The drawback of traditional microwave technique is that precise knowledge of the band origins of low lying excited states is rarely gained. The fitting of data interpolates well for the range of quantum numbers where there is laboratory data, but extrapolation is almost never precise. The majority of high resolution spectroscopic data is millimeter or longer in wavelength and a very limited number of molecules have ever been studied with microwave techniques at wavelengths shorter than 0.3 millimeters. The situation with infrared technique is similarly dire in the submillimeter and far infrared because the black body sources used are competing with a very significant thermal background making the signal to noise poor. Regardless of the technique used the data must be archived in a way useful for the interpretation of observations.

Tracing Magnetic Fields With The Polarization Of Submillimeter Lines

Science.gov (United States)

Zhang, Heshou; Yan, Huirong

2017-10-01

Magnetic fields play important roles in many astrophysical processes. However, there is no universal diagnostic for the magnetic fields in the interstellar medium (ISM) and each magnetic tracer has its limitation. Any new detection method is thus valuable. Theoretical studies have shown that submillimeter fine-structure lines are polarized due to atomic alignment by Ultraviolet (UV) photon-excitation, which opens up a new avenue to probe interstellar magnetic fields. The method is applicable to all radiative-excitation dominant region, e.g., H II Regions, PDRs. The polarization of the submillimeter fine-structure lines induced by atomic alignment could be substantial and the applicability of using the spectro-polarimetry of atomic lines to trace magnetic fields has been supported by synthetic observations of simulated ISM in our recent paper. Our results demonstrate that the polarization of submillimeter atomic lines is a powerful magnetic tracer and add great value to the observational studies of the submilimeter astronomy.

Transition-Edge Hot-Electron Microbolometers for Millimeter and Submillimeter Astrophysics

Science.gov (United States)

Hsieh, Wen-Ting; Stevenson, Thomas; U-yen, Kongpop; Wollack, Edward; Barrentine, Emily

2014-01-01

The millimeter and the submillimeter wavelengths of the electromagnetic spectrum hold a wealth of information about the evolution of the universe. In particular, cosmic microwave background (CMB) radiation and its polarization carry the oldest information in the universe, and provide the best test of the inflationary paradigm available to astronomy today. Detecting gravity waves through their imprint on the CMB polarization would have extraordinary repercussions for cosmology and physics. A transition-edge hot-electron micro - bolometer (THM) consists of a superconducting bilayer transition-edge sensor (TES) with a thin-film absorber. Unlike traditional monolithic bolometers that make use of micromachined structures, the THM em ploys the decoupling between electrons and phonons at millikelvin temperatures to provide thermal isolation. The devices are fabricated photolithographically and are easily integrated with antennas via microstrip transmission lines, and with SQUID (superconducting quantum interference device) readouts. The small volume of the absorber and TES produces a short thermal time constant that facilitates rapid sky scanning. The THM consists of a thin-film metal absorber overlapping a superconducting TES. The absorber forms the termination of a superconducting microstripline that carries RF power from an antenna. The purpose of forming a separate absorber and TES is to allow flexibility in the optimization of the two components. In particular, the absorbing film's impedance can be chosen to match the antenna, while the TES impedance can be chosen to match to the readout SQUID amplifier. This scheme combines the advantages of the TES with the advantages of planar millimeter-wave transmission line circuits. Antenna-coupling to the detectors via planar transmission lines allows the detector dimensions to be much smaller than a wavelength, so the technique can be extended across the entire microwave, millimeter, and submillimeter wavelength ranges. The

Micro-Spec: A High Performance Compact Spectrometer for Submillimeter Astronomy

Science.gov (United States)

Hsieh, Wen-Ting; Moseley, Harvey; Stevenson, Thomas; Brown, Ari; Patel, Amil; U-Yen, Kongpop; Ehsan, Negar; Caltado, Giuseppe; Wollock, Edward

2012-01-01

We describe the micro-Spec, an extremely compact high performance spectrometer for the submillimeter and millimeter spectral ranges. We have designed a fully integrated submillimeter spectrometer based on superconducting microstrip technology and fabricated its critical elements. Using low loss transmission lines, we can produce a fully integrated high resolution submillimeter spectrometer on a single four inch Si wafer. A resolution of 500 can readily be achieved with standard fabrication tolerance, higher with phase trimming. All functions of the spectrometer are integrated - light is coupled to the micro strip circuit with a planar antenna, the spectra discrimination is achieved using a synthetic grating, orders are separated using a built-in planar filter, and the light is detected using photon counting Microwave Kinetic Inductance Detectors (MKID). We will discus the design principle of the instrument, describe its technical advantages, and report the progress on the development of the instrument.

Mu-Spec: A High Performance Compact Spectrometer for Submillimeter Astronomy

Science.gov (United States)

Hsieh, Wen-Ting; Moseley, Harvey; Stevenson, Thomas; Brown, Ari; Patel, Amil; U-yen, Kongpop; Ehsan, Negar; Cataldo, Giuseppe; Wollack, Ed

2012-01-01

We describe the Mu-Spec, an extremely compact high performance spectrometer for the submillimeter and millimeter spectral ranges. We have designed a fully integrated submillimeter spectrometer based on superconducting microstrip technology and fabricated its critical elements. Using low loss transmission lines, we can produce a fully integrated high resolution submillimeter spectrometer on a single four inch Si wafer. A resolution of 500 can readily be achieved with standard fabrication tolerance, higher with phase trimming. All functions of the spectrometer are integrated - light is coupled to the microstrip circuit with a planar antenna, the spectra discrimination is achieved using a synthetic grating, orders are separated using a built-in planar filter, and the light is detected using photon counting Microwave Kinetic Inductance Detectors (MKID). We will discus the design principle of the instrument, describe its technical advantages, and report the progress on the development of the instrument.

Doped Organic Transistors.

Science.gov (United States)

Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

2016-11-23

Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

Science with the wideband Submillimeter Array: A Strategy for the Decade 2017-2027

Science.gov (United States)

Wilner, D.; Keto, E.; Bower, G.; Ching, T. C.; Gurwell, M.; Hirano, N.; Keating, G.; Lai, S. P.; Patel, N.; Petitpas, G.; Qi, C.; Sridharan, T. K.; Urata, Y.; Young, K.; Zhang, Q.; Zhao, J.-H.

2017-01-01

of evolved star envelopes, the constituents of planetary atmospheres, starburst galaxies in the local Universe and at high redshifts, and even low-mass galaxies at high redshifts through the technique of intensity mapping. The wSMA speeds up observations to allow systematic, comparative studies of large numbers of spectral surveys for the first time. The wSMA also will be ideally suited for the study of sources in the time domain. Illustrative examples include the variability of the accretion flow onto the SgrA* black hole, capturing emission from gamma ray bursts from massive star deaths in the early universe and the mergers of compact objects that produce gravitational waves, and resolved spectroscopy of the pristine material that escapes from comets as they traverse the inner Solar System. The wSMA will be complementary to the larger international Atacama Large Millimeter/ submillimeter Array (ALMA) in Chile, which followed the SMA into submillimeter interferometry in 2011. The immense time pressure on ALMA from its many constituencies only creates an increasing need for the wSMA, notably for the large class of observations that do not require ALMA's full sensitivity or angular resolution, as well as for unique submillimeter access to the northern sky. The wSMA will play a leading role in select science areas in the ALMA era, including those requiring long-term programs to build large samples, or rapid response based on flexible scheduling, as well as for high risk seed studies specifically designed for subsequent ALMA follow-up. In addition, the wSMA will be a critical station for submillimeter VLBI observations of supermassive black holes in the global Event Horizon Telescope, which will be bolstered by the inclusion of ALMA in 2017. Finally, the wSMA design explicitly incorporates open space for additional instrumentation to pursue new and compelling science goals and technical innovations, continuing its role as a pathfinder for submillimeter astronomy.

Detection of Submillimeter-wave [C i] Emission in Gaseous Debris Disks of 49 Ceti and β Pictoris

Energy Technology Data Exchange (ETDEWEB)

Higuchi, Aya E.; Sakai, Nami [The Institute of Physical and Chemical Research (RIKEN), 2-1, Hirosawa, Wako-shi, Saitama 351-0198 (Japan); Sato, Aki; Tsukagoshi, Takashi; Momose, Munetake [College of Science, Ibaraki University, Bunkyo 2-1-1, Mito 310-8512 (Japan); Iwasaki, Kazunari [Department of Environmental Systems Science, Doshisha University, Tatara Miyakodani 1-3, Kyotanabe City, Kyoto 610-0394 (Japan); Kobayashi, Hiroshi; Ishihara, Daisuke; Watanabe, Sakae; Kaneda, Hidehiro [Department of Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8602 (Japan); Yamamoto, Satoshi, E-mail: aya.higuchi@riken.jp [Department of Physics, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

2017-04-10

We have detected [C i] {sup 3} P {sub 1}–{sup 3} P {sub 0} emissions in the gaseous debris disks of 49 Ceti and β Pictoris with the 10 m telescope of the Atacama Submillimeter Telescope Experiment, which is the first detection of such emissions. The line profiles of [C i] are found to resemble those of CO( J = 3–2) observed with the same telescope and the Atacama Large Millimeter/submillimeter Array. This result suggests that atomic carbon (C) coexists with CO in the debris disks and is likely formed by the photodissociation of CO. Assuming an optically thin [C i] emission with the excitation temperature ranging from 30 to 100 K, the column density of C is evaluated to be (2.2 ± 0.2) × 10{sup 17} and (2.5 ± 0.7) × 10{sup 16} cm{sup −2} for 49 Ceti and β Pictoris, respectively. The C/CO column density ratio is thus derived to be 54 ± 19 and 69 ± 42 for 49 Ceti and β Pictoris, respectively. These ratios are higher than those of molecular clouds and diffuse clouds by an order of magnitude. The unusually high ratios of C to CO are likely attributed to a lack of H{sub 2} molecules needed to reproduce CO molecules efficiently from C. This result implies a small number of H{sub 2} molecules in the gas disk, i.e., there is an appreciable contribution of secondary gas from dust grains.

Design procedure for millimeter-wave InP DHBT stacked power amplifiers

DEFF Research Database (Denmark)

Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

2015-01-01

The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...

[Comparative study of effect of infrared, submillimeter, and millimeter electromagnetic radiation on wing somatic mutations in Drosophila melanogaster induced by gamma-irradiation].

Science.gov (United States)

Fedorov, V I; Pogodin, A S; Dubatolova, T D; Varlamov, A V; Leont'ev, K V; Khamoian, A G

2001-01-01

It was shown that the number of spontaneous and gamma-radiation-induced somatic mutations in wing cells of fruit flies (third instar larvae) exposed to laser irradiation of submillimeter range (lambda = 81.5 microns) was significantly lower than in control. Laser irradiation did not affect the number of recombinations. Exposure to laser radiation in the infrared range and electromagnetic waves of the millimeter range (lambda = 3.8 mm) enhanced the effect of gamma-irradiation.

Understanding noise suppression in heterojunction field-effect transistors

International Nuclear Information System (INIS)

Green, F.

1996-01-01

Full text: The enhanced transport properties displayed by quantum-well-confined, two-dimensional, electron systems underpin the success of heterojunction, field-effect transistors. At cryogenic temperatures, these devices exhibit impressive mobilities and, as a result, high signal gain and low noise. Conventional wisdom has it that the same favourable conditions also hold for normal room-temperature operation. In that case, however, high mobilities are precluded by abundant electron-phonon scattering. Our recent study of nonequilibrium current noise shows that quantum confinement, not high mobility, is the principal source of noise in these devices; this opens up new and exciting opportunities in low-noise transistor design. As trends in millimetre-wave technology push frequencies beyond 100 GHz, it is essential to develop a genuine understanding of noise processes in heterojunction devices

Submillimeter Diameter Poly(Vinyl Alcohol) Vascular Graft Patency in Rabbit Model

Science.gov (United States)

Cutiongco, Marie F. A.; Kukumberg, Marek; Peneyra, Jonnathan L.; Yeo, Matthew S.; Yao, Jia Y.; Rufaihah, Abdul Jalil; Le Visage, Catherine; Ho, Jackie Pei; Yim, Evelyn K. F.

2016-01-01

Microvascular surgery is becoming a prevalent surgical practice. Replantation, hand reconstruction, orthopedic, and free tissue transfer procedures all rely on microvascular surgery for the repair of venous and arterial defects at the millimeter and submillimeter levels. Often, a vascular graft is required for the procedure as a means to bridge the gap between native arteries. While autologous vessels are desired for their bioactivity and non-thrombogenicity, the tedious harvest process, lack of availability, and caliber or mechanical mismatch contribute to graft failure. Thus, there is a need for an off-the-shelf artificial vascular graft that has low thrombogenic properties and mechanical properties matching those of submillimeter vessels. Poly(vinyl alcohol) hydrogel (PVA) has excellent prospects as a vascular graft due to its bioinertness, low thrombogenicity, high water content, and tunable mechanical properties. Here, we fabricated PVA grafts with submillimeter diameter and mechanical properties that closely approximated those of the rabbit femoral artery. In vitro platelet adhesion and microparticle release assay verified the low thrombogenicity of PVA. A stringent proof-of-concept in vivo test was performed by implanting PVA grafts in rabbit femoral artery with multilevel arterial occlusion. Laser Doppler measurements indicated the improved perfusion of the distal limb after implantation with PVA grafts. Moreover, ultrasound Doppler and angiography verified that the submillimeter diameter PVA vascular grafts remained patent for 2 weeks without the aid of anticoagulant or antithrombotics. Endothelial cells were observed in the luminal surface of one patent PVA graft. The advantageous non-thrombogenic and tunable mechanical properties of PVA that are retained even in the submillimeter diameter dimensions support the application of this biomaterial for vascular replacement in microvascular surgery. PMID:27376059

EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

Science.gov (United States)

Demming, Anna

2012-09-01

Today the transistor is integral to the electronic circuitry that wires our lives. When Bardeen and Brattain first observed an amplified signal by connecting electrodes to a germanium crystal they saw that their 'semiconductor triode' could prove a useful alternative to the more cumbersome vacuum tubes used at the time [1]. But it was perhaps William Schottky who recognized the extent of the transistor's potential. A basic transistor has three or more terminals and current across one pair of terminals can switch or amplify current through another pair. Bardeen, Brattain and Schottky were jointly awarded a Nobel Prize in 1956 'for their researches on semiconductors and their discovery of the transistor effect' [2]. Since then many new forms of the transistor have been developed and understanding of the underlying properties is constantly advancing. In this issue Chen and Shih and colleagues at Taiwan National University and Drexel University report a pyroelectrics transistor. They show how a novel optothermal gating mechanism can modulate the current, allowing a range of developments in nanoscale optoelectronics and wireless devices [3]. The explosion of interest in nanoscale devices in the 1990s inspired electronics researchers to look for new systems that can act as transistors, such as carbon nanotube [4] and silicon nanowire [5] transistors. Generally these transistors function by raising and lowering an energy barrier of kBT -1, but researchers in the US and Canada have demonstrated that the quantum interference between two electronic pathways through aromatic molecules can also modulate the current flow [6]. The device has advantages for further miniaturization where energy dissipation in conventional systems may eventually cause complications. Interest in transistor technology has also led to advances in fabrication techniques for achieving high production quantities, such as printing [7]. Researchers in Florida in the US demonstrated field effect transistor

Unijunction transistors

International Nuclear Information System (INIS)

1981-01-01

The electrical characteristics of unijunction transistors can be modified by irradiation with electron beams in excess of 400 KeV and at a dose rate of 10 13 to 10 16 e/cm 2 . Examples are given of the effect of exposing the emitter-base junctions of transistors to such lattice defect causing radiation for a time sufficient to change the valley current of the transistor. (U.K.)

Tunable submillimeter sources applied to the excited state rotational spectroscopy and kinetics of CH3F

International Nuclear Information System (INIS)

Blumberg, W.A.M.; Fetterman, H.R.; Peck, D.D.; Goldsmith, P.F.

1979-01-01

Tunable submillimeter radiation, generated and detected using optically pumped lasers and Schottky diode mixers, has been used in an infrared-submillimeter double resonance investigation of CH 3 F. This technique permits the direct observation of the molecular rotational spectra and kinetics of excited vibrational states and is particularly important for those molecules which are candidates for optically pumped submillimeter lasers

Impact of total ionizing dose on the electromagnetic susceptibility of a single bipolar transistor

International Nuclear Information System (INIS)

Doridant, A.; Jarrix, S.; Raoult, J.; Blain, A.; Dusseau, L.; Chatry, N.; Calvel, P.; Hoffmann, P.

2012-01-01

Space or military electronic components are subject to both electromagnetic fields and total ionizing dose. This paper deals with the electromagnetic susceptibility of a discrete low frequency transistor subject to total ionizing dose deposition. The electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors mounted in common emitter configuration. The change in susceptibility to 100 MHz-1.5 GHz interferences lights up a synergy effect between near field electromagnetic waves and total ionizing dose. Physical mechanisms leading to changes in signal output are detailed. (authors)

GaN transistors on Si for switching and high-frequency applications

Science.gov (United States)

Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

2014-10-01

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

Mapping brain activity with flexible graphene micro-transistors

Science.gov (United States)

Blaschke, Benno M.; Tort-Colet, Núria; Guimerà-Brunet, Anton; Weinert, Julia; Rousseau, Lionel; Heimann, Axel; Drieschner, Simon; Kempski, Oliver; Villa, Rosa; Sanchez-Vives, Maria V.; Garrido, Jose A.

2017-06-01

Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical activity, however, evidence important shortcomings, e.g. challenging high density integration. Solution-gated field-effect transistors (SGFETs), on the other hand, could overcome these shortcomings if a suitable transistor material were available. Graphene is particularly attractive due to its biocompatibility, chemical stability, flexibility, low intrinsic electronic noise and high charge carrier mobilities. Here, we report on the use of an array of flexible graphene SGFETs for recording spontaneous slow waves, as well as visually evoked and also pre-epileptic activity in vivo in rats. The flexible array of graphene SGFETs allows mapping brain electrical activity with excellent signal-to-noise ratio (SNR), suggesting that this technology could lay the foundation for a future generation of in vivo recording implants.

Submillimeter (Lambda < 1 mm) Continuum Imaging at CSO: A Retrospective

Science.gov (United States)

Dowell, C. Darren

2009-01-01

This contribution is submitted on behalf of all students, postdocs, and staff inspired and supported by Tom Phillips to build an instrument and then wait for low precipitable water vapor. Over the 20 plus years of its existence, the Caltech Submillimeter Observatory (CSO) has seen a succession of ever more powerful detectors to measure continuum emission in the shortest submillimeter bands available from Mauna Kea. These instruments have been trained on the nearest solar systems, the most distant galaxies, and objects in between. I show several images collected over the 5 plus year history of the SHARC II camera and anecdotal comparison with past work.

Nonstationary behavior in a delayed feedback traveling wave tube folded waveguide oscillator

International Nuclear Information System (INIS)

Ryskin, N.M.; Titov, V.N.; Han, S.T.; So, J.K.; Jang, K.H.; Kang, Y.B.; Park, G.S.

2004-01-01

Folded waveguide traveling-wave tubes (FW TWT) are among the most promising candidates for powerful compact amplifiers and oscillators in millimeter and submillimeter wave bands. In this paper, the nonstationary behavior of a FW TWT oscillator with delayed feedback is investigated. Starting conditions of the oscillations are derived analytically. Results of numerical simulation of single-frequency, self-modulation (multifrequency) and chaotic generation regimes are presented. Mode competition phenomena, multistability and hysteresis are discussed

Copper atomic-scale transistors.

Science.gov (United States)

Xie, Fangqing; Kavalenka, Maryna N; Röger, Moritz; Albrecht, Daniel; Hölscher, Hendrik; Leuthold, Jürgen; Schimmel, Thomas

2017-01-01

We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO 4 + H 2 SO 4 ) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and -170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes ( U bias ) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1 G 0 ( G 0 = 2e 2 /h; with e being the electron charge, and h being Planck's constant) or 2 G 0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

Quantum-limited detection of millimeter waves using superconducting tunnel junctions

International Nuclear Information System (INIS)

Mears, C.A.

1991-09-01

The quasiparticle tunneling current in a superconductor-insulator- superconductor (SIS) tunnel junction is highly nonlinear. Such a nonlinearity can be used to mix two millimeter wave signals to produce a signal at a much lower intermediate frequency. We have constructed several millimeter and sub-millimeter wave SIS mixers in order to study high frequency response of the quasiparticle tunneling current and the physics of high frequency mixing. We have made the first measurement of the out-of-phase tunneling currents in an SIS tunnel junction. We have developed a method that allows us to determine the parameters of the high frequency embedding circuit by studying the details of the pumped I-V curve. We have constructed a 80--110 GHz waveguide-based mixer test apparatus that allows us to accurately measure the gain and added noise of the SIS mixer under test. Using extremely high quality tunnel junctions, we have measured an added mixer noise of 0.61 ± 0.36 quanta, which is within 25 percent of the quantum limit imposed by the Heisenberg uncertainty principle. This measured performance is in excellent agreement with that predicted by Tucker's theory of quantum mixing. We have also studied quasioptically coupled millimeter- and submillimeter-wave mixers using several types of integrated tuning elements. 83 refs

Enhanced traveling wave amplification of co-planar slow wave structure by extended phase-matching

International Nuclear Information System (INIS)

Palm, Andrew; Sirigiri, Jagadishwar; Shin, Young-Min

2015-01-01

The electron beam co-propagating with slow waves in a staggered double grating array (SDGA) efficiently amplifies millimeter and sub-millimeter waves over a wide spectrum. Our theoretical and numerical analyses show that the power amplification in the fundamental passband is enhanced by the extended beam-wave phase-matching. Particle-in-cell simulations on the SDGA slow wave structure, designed with 10.4 keV and 50–100 mA sheet beam, indicate that maintaining beam-wave synchronization along the entire length of the circuit improves the gain by 7.3% leading to a total gain of 28 dB, corresponding to 62 W saturated power at the middle of operating band, and a 3-dB bandwidth of 7 GHz with 10.5% at V-band (73.5 GHz center frequency) with saturated peak power reaching 80 W and 28 dB at 71 GHz. These results also show a reasonably good agreement with analytic calculations based on Pierce small signal gain theory

High Magnetic Field in THz Plasma Wave Detection by High Electron Mobility Transistors

Science.gov (United States)

Sakowicz, M.; Łusakowski, J.; Karpierz, K.; Grynberg, M.; Valusis, G.

The role of gated and ungated two dimensional (2D) electron plasma in THz detection by high electron mobility transistors (HEMTs) was investigated. THz response of GaAs/AlGaAs and GaN/AlGaN HEMTs was measured at 4.4K in quantizing magnetic fields with a simultaneous modulation of the gate voltage UGS. This allowed us to measure both the detection signal, S, and its derivative dS/dUGS. Shubnikov - de-Haas oscillations (SdHO) of both S and dS/dUGS were observed. A comparison of SdHO observed in detection and magnetoresistance measurements allows us to associate unambiguously SdHO in S and dS/dUGS with the ungated and gated parts of the transistor channel, respectively. This allows us to conclude that the entire channel takes part in the detection process. Additionally, in the case of GaAlAs/GaAs HEMTs, a structure related to the cyclotron resonance transition was observed.

Lightweight Thermally Stable Multi-Meter Aperture Submillimeter Reflectors, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Future astrophysics missions will require lightweight, thermally stable, submillimeter reflectors in sizes of 4m and greater. To date, graphite fiber reinforced...

Superconducting transistor

International Nuclear Information System (INIS)

Gray, K.E.

1978-01-01

A three film superconducting tunneling device, analogous to a semiconductor transistor, is presented, including a theoretical description and experimental results showing a current gain of four. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the semiconductor junction transistor

A SUBMILLIMETER CONTINUUM SURVEY OF LOCAL DUST-OBSCURED GALAXIES

International Nuclear Information System (INIS)

Lee, Jong Chul; Hwang, Ho Seong; Lee, Gwang-Ho

2016-01-01

We conduct a 350 μ m dust continuum emission survey of 17 dust-obscured galaxies (DOGs) at z = 0.05–0.08 with the Caltech Submillimeter Observatory (CSO). We detect 14 DOGs with S 350μm = 114–650 mJy and signal-to-noise > 3. By including two additional DOGs with submillimeter data in the literature, we are able to study dust content for a sample of 16 local DOGs, which consist of 12 bump and four power-law types. We determine their physical parameters with a two-component modified blackbody function model. The derived dust temperatures are in the range 57–122 K and 22–35 K for the warm and cold dust components, respectively. The total dust mass and the mass fraction of the warm dust component are 3–34 × 10 7 M ⊙ and 0.03%–2.52%, respectively. We compare these results with those of other submillimeter-detected infrared luminous galaxies. The bump DOGs, the majority of the DOG sample, show similar distributions of dust temperatures and total dust mass to the comparison sample. The power-law DOGs show a hint of smaller dust masses than other samples, but need to be tested with a larger sample. These findings support that the reason DOGs show heavy dust obscuration is not an overall amount of dust content, but probably the spatial distribution of dust therein.

A SUBMILLIMETER CONTINUUM SURVEY OF LOCAL DUST-OBSCURED GALAXIES

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Chul [Korea Astronomy and Space Science Institute, 776 Daedeokdae-ro, Yuseong-gu, Daejeon 34055 (Korea, Republic of); Hwang, Ho Seong [School of Physics, Korea Institute for Advanced Study, 85 Hoegiro, Dongdaemun-gu, Seoul 02455 (Korea, Republic of); Lee, Gwang-Ho, E-mail: jclee@kasi.re.kr [Department of Physics and Astronomy, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-742 (Korea, Republic of)

2016-12-20

We conduct a 350 μ m dust continuum emission survey of 17 dust-obscured galaxies (DOGs) at z = 0.05–0.08 with the Caltech Submillimeter Observatory (CSO). We detect 14 DOGs with S{sub 350μm} = 114–650 mJy and signal-to-noise > 3. By including two additional DOGs with submillimeter data in the literature, we are able to study dust content for a sample of 16 local DOGs, which consist of 12 bump and four power-law types. We determine their physical parameters with a two-component modified blackbody function model. The derived dust temperatures are in the range 57–122 K and 22–35 K for the warm and cold dust components, respectively. The total dust mass and the mass fraction of the warm dust component are 3–34 × 10{sup 7} M {sub ⊙} and 0.03%–2.52%, respectively. We compare these results with those of other submillimeter-detected infrared luminous galaxies. The bump DOGs, the majority of the DOG sample, show similar distributions of dust temperatures and total dust mass to the comparison sample. The power-law DOGs show a hint of smaller dust masses than other samples, but need to be tested with a larger sample. These findings support that the reason DOGs show heavy dust obscuration is not an overall amount of dust content, but probably the spatial distribution of dust therein.

Investigation of imaging properties for submillimeter rectangular pinholes

Energy Technology Data Exchange (ETDEWEB)

Xia, Dan, E-mail: dxia@uchicago.edu [The Department of Radiology, The University of Chicago, Chicago, Illinois 60637 (United States); Moore, Stephen C., E-mail: scmoore@bwh.harvard.edu, E-mail: miaepark@bwh.harvard.edu, E-mail: mcervo@bwh.harvard.edu; Park, Mi-Ae, E-mail: scmoore@bwh.harvard.edu, E-mail: miaepark@bwh.harvard.edu, E-mail: mcervo@bwh.harvard.edu; Cervo, Morgan, E-mail: scmoore@bwh.harvard.edu, E-mail: miaepark@bwh.harvard.edu, E-mail: mcervo@bwh.harvard.edu [Brigham and Women’s Hospital and Harvard Medical School, Boston, Massachusetts 02115 (United States); Metzler, Scott D., E-mail: metzler@upenn.edu [The Department of Radiology, The University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

2015-12-15

Purpose: Recently, a multipinhole collimator with inserts that have both rectangular apertures and rectangular fields of view (FOVs) has been proposed for SPECT imaging since it can tile the projection onto the detector efficiently and the FOVs in transverse and axial directions become separable. The purpose of this study is to investigate the image properties of rectangular-aperture pinholes with submillimeter apertures sizes. Methods: In this work, the authors have conducted sensitivity and FOV experiments for 18 replicates of a prototype insert fabricated in platinum/iridium (Pt/Ir) alloy with submillimeter square-apertures. A sin{sup q}θ fit to the experimental sensitivity has been performed for these inserts. For the FOV measurement, the authors have proposed a new formula to calculate the projection intensity of a flood image on the detector, taking into account the penumbra effect. By fitting this formula to the measured projection data, the authors obtained the acceptance angles. Results: The mean (standard deviation) of fitted sensitivity exponents q and effective edge lengths w{sub e} were, respectively, 10.8 (1.8) and 0.38 mm (0.02 mm), which were close to the values, 7.84 and 0.396 mm, obtained from Monte Carlo calculations using the parameters of the designed inserts. For the FOV measurement, the mean (standard deviation) of the transverse and axial acceptances were 35.0° (1.2°) and 30.5° (1.6°), which are in good agreement with the designed values (34.3° and 29.9°). Conclusions: These results showed that the physical properties of the fabricated inserts with submillimeter aperture size matched our design well.

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Charge pumping in InAs nanowires by surface acoustic waves

NARCIS (Netherlands)

Roddaro, Stefano; Strambini, Elia; Romeo, Lorenzo; Piazza, Vincenzo; Nilsson, Kristian; Samuelson, Lars; Beltram, Fabio

2010-01-01

We investigate the interaction between surface acoustic waves on a piezoelectric LiNbO3 substrate and charge carriers in InAs nanowire transistors. Interdigital transducers are used to excite electromechanical waves on the chip surface and their influence on the transport in the nanowire devices is

Photonic band gap materials: towards an all-optical transistor

Science.gov (United States)

Florescu, Marian

2002-05-01

The transmission of information as optical signals encoded on light waves traveling through optical fibers and optical networks is increasingly moving to shorter and shorter distance scales. In the near future, optical networking is poised to supersede conventional transmission over electric wires and electronic networks for computer-to-computer communications, chip-to-chip communications, and even on-chip communications. The ever-increasing demand for faster and more reliable devices to process the optical signals offers new opportunities in developing all-optical signal processing systems (systems in which one optical signal controls another, thereby adding "intelligence" to the optical networks). All-optical switches, two-state and many-state all-optical memories, all-optical limiters, all-optical discriminators and all-optical transistors are only a few of the many devices proposed during the last two decades. The "all-optical" label is commonly used to distinguish the devices that do not involve dissipative electronic transport and require essentially no electrical communication of information. The all-optical transistor action was first observed in the context of optical bistability [1] and consists in a strong differential gain regime, in which, for small variations in the input intensity, the output intensity has a very strong variation. This analog operation is for all-optical input what transistor action is for electrical inputs.

DUST PROPERTIES OF LOCAL DUST-OBSCURED GALAXIES WITH THE SUBMILLIMETER ARRAY

International Nuclear Information System (INIS)

Hwang, Ho Seong; Andrews, Sean M.; Geller, Margaret J.

2013-01-01

We report Submillimeter Array observations of the 880 μm dust continuum emission for four dust-obscured galaxies (DOGs) in the local universe. Two DOGs are clearly detected with S ν (880 μm) =10-13 mJy and S/N > 5, but the other two are not detected with 3σ upper limits of S ν (880 μm) =5-9 mJy. Including an additional two local DOGs with submillimeter data from the literature, we determine the dust masses and temperatures for six local DOGs. The infrared luminosities and dust masses for these DOGs are in the ranges of 1.2-4.9 × 10 11 (L ☉ ) and 4-14 × 10 7 (M ☉ ), respectively. The dust temperatures derived from a two-component modified blackbody function are 23-26 K and 60-124 K for the cold and warm dust components, respectively. Comparison of local DOGs with other infrared luminous galaxies with submillimeter detections shows that the dust temperatures and masses do not differ significantly among these objects. Thus, as argued previously, local DOGs are not a distinctive population among dusty galaxies, but simply represent the high-end tail of the dust obscuration distribution

Accelerating the life of transistors

International Nuclear Information System (INIS)

Qi Haochun; Lü Changzhi; Zhang Xiaoling; Xie Xuesong

2013-01-01

Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object, the test of accelerating life is conducted in constant temperature and humidity, and then the data are statistically analyzed with software developed by ourselves. According to degradations of such sensitive parameters as the reverse leakage current of transistors, the lifetime order of transistors is about more than 10 4 at 100 °C and 100% relative humidity (RH) conditions. By corrosion fracture of transistor outer leads and other failure modes, with the failure truncated testing, the average lifetime rank of transistors in different distributions is extrapolated about 10 3 . Failure mechanism analyses of degradation of electrical parameters, outer lead fracture and other reasons that affect transistor lifetime are conducted. The findings show that the impact of external stress of outer leads on transistor reliability is more serious than that of parameter degradation. (semiconductor devices)

Lightweight Thermally Stable Multi-Meter Aperture Submillimeter Reflectors, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — The objective of the Phase II effort will be an affordable demonstrated full-scale design for a thermally stable multi-meter submillimeter reflector. The Phase I...

Multi-imaging adaptive concept for IR and submillimeter space telescopes

Science.gov (United States)

Vasilyev, Victor P.

1995-06-01

Nontraditional IR and submillimeter spaceborne telescope concept basing on blind-type parabolic multi-ring mirror is proposed and discussed. Preliminary results for optimization of mirror parameters by means of computer simulation are presented.

High-performance vertical organic transistors.

Science.gov (United States)

Kleemann, Hans; Günther, Alrun A; Leo, Karl; Lüssem, Björn

2013-11-11

Vertical organic thin-film transistors (VOTFTs) are promising devices to overcome the transconductance and cut-off frequency restrictions of horizontal organic thin-film transistors. The basic physical mechanisms of VOTFT operation, however, are not well understood and VOTFTs often require complex patterning techniques using self-assembly processes which impedes a future large-area production. In this contribution, high-performance vertical organic transistors comprising pentacene for p-type operation and C60 for n-type operation are presented. The static current-voltage behavior as well as the fundamental scaling laws of such transistors are studied, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers. The transistors are manufactured by photolithography, in contrast to other VOTFT concepts using self-assembled source electrodes. Fluorinated photoresist and solvent compounds allow for photolithographical patterning directly and strongly onto the organic materials, simplifying the fabrication protocol and making VOTFTs a prospective candidate for future high-performance applications of organic transistors. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Millimeter and submillimeter observations from the Atacama plateau and high altitude balloons

Science.gov (United States)

Devlin, Mark

2002-05-01

A new generation of ground-based and sub-orbital platforms will be operational in the next few years. These telescopes will operate from high sites in Chile and Antarctica, and airborne platforms where the atmosphere is transparent enough to allow sensitive measurements in the millimeter and submillimeter bands. The telescopes will employ state-of-the-art instrumentation including large format bolometer arrays and spectrometers. I will discuss the results of our observations in the Atacama region of Chile (MAT/TOCO), our future observations on the Balloon-borne Large Aperture Submillimeter Telescope (BLAST) now under construction, and our proposed Atacama Cosmology Telescope (ACT). .

Silicon nanowire transistors

CERN Document Server

Bindal, Ahmet

2016-01-01

This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

Development of a Submillimeter-Wavelength Immersion Grating Spectrometer

Science.gov (United States)

Phillips, T. G.

2001-01-01

The broad goal of this project was to develop a broadband, moderate-resolution spectrometer for submillimeter wavelengths. Our original approach was to build an immersion grating spectrometer, and as such, the first step was to identify the best material (lowest loss, highest index) for the grating medium, and to characterize its properties at the foreseen optical-bench operating temperature of 1.5 K. To this end, we put our initial efforts into upgrading an existing laboratory submillimeter Fourier transform spectrometer, which allowed us to carry out the requisite materials measurements. The associated cryogenic detector dewar was also redesigned and rebuilt to carry out this work. This dewar houses the 1.5 K detector and the filter wheel used in the materials characterization. Our goal was to have the beam propagate through the samples as uniformly as possible, so the optics were redesigned to allow for the samples to be traversed by a well-defined collimated beam. The optics redesign also placed the samples at an image of the aperture stop located within the FTS. After the rebuild, we moved into the testing phase.

Logarithmic current-measuring transistor circuits

DEFF Research Database (Denmark)

Højberg, Kristian Søe

1967-01-01

Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

Shootthrough fault protection system for bipolar transistors in a voltage source transistor inverter

International Nuclear Information System (INIS)

Wirth, W.F.

1982-01-01

Faulted bipolar transistors in a voltage source transistor inverter are protected against shootthrough fault current, from the filter capacitor of the d-c voltage source which drives the inverter over the d-c bus, by interposing a small choke in series with the filter capacitor to limit the rate of rise of that fault current while at the same time causing the d-c bus voltage to instantly drop to essentially zero volts at the beginning of a shootthrough fault. In this way, the load lines of the faulted transistors are effectively shaped so that they do not enter the second breakdown area, thereby preventing second breakdown destruction of the transistors

DUST PROPERTIES OF LOCAL DUST-OBSCURED GALAXIES WITH THE SUBMILLIMETER ARRAY

Energy Technology Data Exchange (ETDEWEB)

Hwang, Ho Seong; Andrews, Sean M.; Geller, Margaret J., E-mail: hhwang@cfa.harvard.edu, E-mail: sandrews@cfa.harvard.edu, E-mail: mgeller@cfa.harvard.edu [Smithsonian Astrophysical Observatory, 60 Garden Street, Cambridge, MA 02138 (United States)

2013-11-01

We report Submillimeter Array observations of the 880 μm dust continuum emission for four dust-obscured galaxies (DOGs) in the local universe. Two DOGs are clearly detected with S{sub ν}(880 μm) =10-13 mJy and S/N > 5, but the other two are not detected with 3σ upper limits of S{sub ν}(880 μm) =5-9 mJy. Including an additional two local DOGs with submillimeter data from the literature, we determine the dust masses and temperatures for six local DOGs. The infrared luminosities and dust masses for these DOGs are in the ranges of 1.2-4.9 × 10{sup 11}(L{sub ☉}) and 4-14 × 10{sup 7}(M{sub ☉}), respectively. The dust temperatures derived from a two-component modified blackbody function are 23-26 K and 60-124 K for the cold and warm dust components, respectively. Comparison of local DOGs with other infrared luminous galaxies with submillimeter detections shows that the dust temperatures and masses do not differ significantly among these objects. Thus, as argued previously, local DOGs are not a distinctive population among dusty galaxies, but simply represent the high-end tail of the dust obscuration distribution.

A High-Voltage Level Tolerant Transistor Circuit

NARCIS (Netherlands)

Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

2001-01-01

A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

Vertical organic transistors

International Nuclear Information System (INIS)

Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

2015-01-01

Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted. (topical review)

Vertical organic transistors.

Science.gov (United States)

Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

2015-11-11

Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

PHOTOMETRIC REDSHIFTS OF SUBMILLIMETER GALAXIES

International Nuclear Information System (INIS)

Chakrabarti, Sukanya; Magnelli, Benjamin; Lutz, Dieter; Berta, Stefano; Popesso, Paola; McKee, Christopher F.; Pozzi, Francesca

2013-01-01

We use the photometric redshift method of Chakrabarti and McKee to infer photometric redshifts of submillimeter galaxies with far-IR (FIR) Herschel data obtained as part of the PACS Evolutionary Probe program. For the sample with spectroscopic redshifts, we demonstrate the validity of this method over a large range of redshifts (4 ∼> z ∼> 0.3) and luminosities, finding an average accuracy in (1 + z phot )/(1 + z spec ) of 10%. Thus, this method is more accurate than other FIR photometric redshift methods. This method is different from typical FIR photometric methods in deriving redshifts from the light-to-gas mass (L/M) ratio of infrared-bright galaxies inferred from the FIR spectral energy distribution, rather than dust temperatures. To assess the dependence of our photometric redshift method on the data in this sample, we contrast the average accuracy of our method when we use PACS data, versus SPIRE data, versus both PACS and SPIRE data. We also discuss potential selection effects that may affect the Herschel sample. Once the redshift is derived, we can determine physical properties of infrared-bright galaxies, including the temperature variation within the dust envelope, luminosity, mass, and surface density. We use data from the GOODS-S field to calculate the star formation rate density (SFRD) of submillimeter bright sources detected by AzTEC and PACS. The AzTEC-PACS sources, which have a threshold 850 μm flux ∼> 5 mJy, contribute 15% of the SFRD from all ultraluminous infrared galaxies (L IR ∼> 10 12 L ☉ ), and 3% of the total SFRD at z ∼ 2

On theory of single-molecule transistor

International Nuclear Information System (INIS)

Tran Tien Phuc

2009-01-01

The results of the study on single-molecule transistor are mainly investigated in this paper. The structure of constructed single-molecule transistor is similar to a conventional MOSFET. The conductive channel of the transistors is a single-molecule of halogenated benzene derivatives. The chemical simulation software CAChe was used to design and implement for the essential parameter of the molecules utilized as the conductive channel. The GUI of Matlab has been built to design its graphical interface, calculate and plot the output I-V characteristic curves for the transistor. The influence of temperature, length and width of the conductive channel, and gate voltage is considered. As a result, the simulated curves are similar to the traditional MOSFET's. The operating temperature range of the transistors is wider compared with silicon semiconductors. The supply voltage for transistors is only about 1 V. The size of transistors in this research is several nanometers.

ON THE EFFECT OF THE COSMIC MICROWAVE BACKGROUND IN HIGH-REDSHIFT (SUB-)MILLIMETER OBSERVATIONS

Energy Technology Data Exchange (ETDEWEB)

Da Cunha, Elisabete; Groves, Brent; Walter, Fabian; Decarli, Roberto; Rix, Hans-Walter [Max-Planck-Institut fuer Astronomie, Koenigstuhl 17, D-69117 Heidelberg (Germany); Weiss, Axel [Max-Planck-Institut fuer Radioastronomie, Auf dem Huegel 69, D-53121 Bonn (Germany); Bertoldi, Frank [Argelander Institute for Astronomy, University of Bonn, Auf dem Huegel 71, D-53121 Bonn (Germany); Carilli, Chris [National Radio Astronomy Observatory, Pete V. Domenici Array Science Center, P.O. Box O, Socorro, NM 87801 (United States); Daddi, Emanuele; Sargent, Mark [Laboratoire AIM, CEA/DSM-CNRS-Universite Paris Diderot, Irfu/Service d' Astrophysique, CEA Saclay, Orme des Merisiers, F-91191 Gif-sur-Yvette Cedex (France); Elbaz, David; Ivison, Rob [UK Astronomy Technology Centre, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Maiolino, Roberto [Cavendish Laboratory, University of Cambridge, 19 J. J. Thomson Avenue, Cambridge, CB3 0HE (United Kingdom); Riechers, Dominik [Department of Astronomy, Cornell University, Ithaca, NY 14853 (United States); Smail, Ian, E-mail: cunha@mpia.de [Institute for Computational Cosmology, Durham University, South Road, Durham DH1 3LE (United Kingdom)

2013-03-20

Modern (sub-)millimeter interferometers enable the measurement of the cool gas and dust emission of high-redshift galaxies (z > 5). However, at these redshifts the cosmic microwave background (CMB) temperature is higher, approaching, and even exceeding, the temperature of cold dust and molecular gas observed in the local universe. In this paper, we discuss the impact of the warmer CMB on (sub-)millimeter observations of high-redshift galaxies. The CMB affects the observed (sub-)millimeter dust continuum and the line emission (e.g., carbon monoxide, CO) in two ways: (1) it provides an additional source of (both dust and gas) heating and (2) it is a non-negligible background against which the line and continuum emission are measured. We show that these two competing processes affect the way we interpret the dust and gas properties of high-redshift galaxies using spectral energy distribution models. We quantify these effects and provide correction factors to compute what fraction of the intrinsic dust (and line) emission can be detected against the CMB as a function of frequency, redshift, and temperature. We discuss implications on the derived properties of high-redshift galaxies from (sub-)millimeter data. Specifically, the inferred dust and molecular gas masses can be severely underestimated for cold systems if the impact of the CMB is not properly taken into account.

Dosimetric properties of MOS transistors

International Nuclear Information System (INIS)

Frank, H.; Petr, I.

1977-01-01

The structure of MOS transistors is described and their characteristics given. The experiments performed and data in the literature show the following dosimetric properties of MOS transistors: while for low gamma doses the transistor response to exposure is linear, it shows saturation for higher doses (exceeding 10 3 Gy in tissue). The response is independent of the energy of radiation and of the dose rate (within 10 -2 to 10 5 Gy/s). The spontaneous reduction with time of the spatial charge captured by the oxide layer (fading) is small and acceptable from the point of view of dosimetry. Curves are given of isochronous annealing of the transistors following irradiation with 137 Cs and 18 MeV electrons for different voltages during irradiation. The curves show that in MOS transistors irradiated with high-energy electrons the effect of annealing is less than in transistors irradiated with 137 Cs. In view of the requirement of using higher temperatures (approx. 400 degC) for the complete ''erasing'' of the captured charge, unsealed systems must be used for dosimetric purposes. The effect was also studied of neutron radiation, proton radiation and electron radiation on the MOS transistor structure. For MOS transistor irradiation with 14 MeV neutrons from a neutron generator the response was 4% of that for gamma radiation at the same dose equivalent. The effect of proton radiation was studied as related to the changes in MOS transistor structure during space flights. The response curve shapes are similar to those of gamma radiation curves. The effect of electron radiation on the MOS structure was studied by many authors. The experiments show that for each thickness of the SiO 2 layer an electron energy exists at which the size of the charge captured in SiO 2 is the greatest. All data show that MOS transistors are promising for radiation dosimetry. The main advantage of MOS transistors as gamma dosemeters is the ease and speed of evaluation, low sensitivity to neutron

Colour tuneable light-emitting transistor

Energy Technology Data Exchange (ETDEWEB)

Feldmeier, Eva J.; Melzer, Christian; Seggern, Heinz von [Electronic Materials Department, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

2010-07-01

In recent years the interest in ambipolar organic light-emitting field-effect transistors has increased steadily as the devices combine switching behaviour of transistors with light emission. Usually, small molecules and polymers with a band gap in the visible spectral range serve as semiconducting materials. Mandatory remain balanced injection and transport properties for both charge carrier types to provide full control of the spatial position of the recombination zone of electrons and holes in the transistor channel via the applied voltages. As will be presented here, the spatial control of the recombination zone opens new possibilities towards light-emitting devices with colour tuneable emission. In our contribution an organic light-emitting field-effect transistors is presented whose emission colour can be changed by the applied voltages. The organic top-contact field-effect transistor is based on a parallel layer stack of acenes serving as organic transport and emission layers. The transistor displays ambipolar characteristics with a narrow recombination zone within the transistor channel. During operation the recombination zone can be moved by a proper change in the drain and gate bias from one organic semiconductor layer to another one inducing a change in the emission colour. In the presented example the emission maxima can be switched from 530 nm to 580 nm.

Dosimetric properties of MOS transistors

International Nuclear Information System (INIS)

Peter, I.; Frank, G.

1977-01-01

The performance of MOS transistors as gamma detectors has been tested. The dosimeter sensitivity has proved to be independent on the doses ranging from 10 3 to 10 6 R, and gamma energy of 137 Cs, 60 Co - sources and 5 - 18 MeV electrons. Fading of the space charge trapped by the SiO 2 layer of the transistor has appeared to be neglegible at room temperature after 400 hrs. The isochronous annealing in the temperature range of 40-260 deg C had a more substantial effect on the space charge of the transistor irradiated with 18 MeV electrons than on the 137 Cs gamma-irradiated transistors. This proved a repeated use of γ-dosemeters. MOS transistors are concluded to be promising for gamma dosimetry [ru

Transistor-based particle detection systems and methods

Science.gov (United States)

Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful

2015-06-09

Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

Electron irradiation of power transistors

International Nuclear Information System (INIS)

Hower, P.L.; Fiedor, R.J.

1982-01-01

A method for reducing storage time and gain parameters in a semiconductor transistor includes the step of subjecting the transistor to electron irradiation of a dosage determined from measurements of the parameters of a test batch of transistors. Reduction of carrier lifetime by proton bombardment and gold doping is mentioned as an alternative to electron irradiation. (author)

Potential of carbon nanotube field effect transistors for analogue circuits

KAUST Repository

Hayat, Khizar; Cheema, Hammad; Shamim, Atif

2013-01-01

This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET's potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g m , f T and f max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

Potential of carbon nanotube field effect transistors for analogue circuits

KAUST Repository

Hayat, Khizar

2013-05-11

This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET\\'s potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g m , f T and f max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

Terahertz light-emitting graphene-channel transistor toward single-mode lasing

Science.gov (United States)

Yadav, Deepika; Tamamushi, Gen; Watanabe, Takayuki; Mitsushio, Junki; Tobah, Youssef; Sugawara, Kenta; Dubinov, Alexander A.; Satou, Akira; Ryzhii, Maxim; Ryzhii, Victor; Otsuji, Taiichi

2018-03-01

A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1-7.6-THz range with a maximum radiation power of 10 μW as well as a single-mode emission at 5.2 THz with a radiation power of 0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature.

The Integration and Applications of Organic Thin Film Transistors and Ferroelectric Polymers

Science.gov (United States)

Hsu, Yu-Jen

Organic thin film transistors and ferroelectric polymer (polyvinylidene difluoride) sheet material are integrated to form various sensors for stress/strain, acoustic wave, and Infrared (heat) sensing applications. Different from silicon-based transistors, organic thin film transistors can be fabricated and processed in room-temperature and integrated with a variety of substrates. On the other hand, polyvinylidene difluoride (PVDF) exhibits ferroelectric properties that are highly useful for sensor applications. The wide frequency bandwidth (0.001 Hz to 10 GHz), vast dynamic range (100n to 10M psi), and high elastic compliance (up to 3 percent) make PVDF a more suitable candidate over ceramic piezoelectric materials for thin and flexible sensor applications. However, the low Curie temperature may have impeded its integration with silicon technology. Organic thin film transistors, however, do not have the limitation of processing temperature, hence can serve as transimpedance amplifiers to convert the charge signal generated by PVDF into current signal that are more measurable and less affected by any downstream parasitics. Piezoelectric sensors are useful for a range of applications, but passive arrays suffer from crosstalk and signal attenuation which have complicated the development of array-based PVDF sensors. We have used organic field effect transistors, which are compatible with the low Curie temperature of a flexible piezoelectric polymer,PVDF, to monolithically fabricate transimpedance amplifiers directly on the sensor surface and convert the piezoelectric charge signal into a current signal which can be detected even in the presence of parasitic capacitances. The device couples the voltage generated by the PVDF film under strain into the gate of the organic thin film transistors (OFET) using an arrangement that allows the full piezoelectric voltage to couple to the channel, while also increasing the charge retention time. A bipolar detector is created by

The Status of MUSIC: A Multicolor Sub/millimeter MKID Instrument

Science.gov (United States)

Schlaerth, J. A.; Czakon, N. G.; Day, P. K.; Downes, T. P.; Duan, R.; Glenn, J.; Golwala, S. R.; Hollister, M. I.; LeDuc, H. G.; Maloney, P. R.; Mazin, B. A.; Nguyen, H. T.; Noroozian, O.; Sayers, J.; Siegel, S.; Zmuidzinas, J.

2012-05-01

We report on the recent progress of the Multicolor Submillimeter (kinetic) Inductance Camera, or MUSIC. MUSIC will use antenna-coupled Microwave Kinetic Inductance Detectors to observe in four colors (150 GHz, 230 GHz, 290 GHz and 350 GHz) with 2304 detectors, 576 per band, at the Caltech Submillimeter Observatory. It will deploy in 2012. Here we provide an overview of the instrument, focusing on the array design. We have also used a pathfinder demonstration instrument, DemoCam, to identify problems in advance of the deployment of MUSIC. In particular, we identified two major limiters of our sensitivity: out-of-band light directly coupling to the detectors (i.e. not through the antenna), effectively an excess load, and a large 1/f contribution from our amplifiers and electronics. We discuss the steps taken to mitigate these effects to reach background-limited performance (BLIP) in observation.

Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays

International Nuclear Information System (INIS)

Popov, V V; Tsymbalov, G M; Shur, M S

2008-01-01

We show that the strong amplification of terahertz radiation takes place in an array of field-effect transistors at small DC drain currents due to hydrodynamic plasmon instability of the collective plasmon mode. Planar designs compatible with standard integrated circuit fabrication processes and strong coupling of terahertz radiation to plasmon modes in FET arrays make such arrays very attractive for potential applications in solid-state terahertz amplifiers and emitters

The point of practical use for the transistor circuit

International Nuclear Information System (INIS)

1996-01-01

This is comprised of eight chapters and goes as follows; what is transistor? the first step for use of transistor such as connection between power and signal source, static characteristic of transistor and equivalent circuit of transistor, design of easy small-signal amplifier circuit, design for amplification of electric power and countermeasure for prevention of trouble, transistor concerned interface, transistor circuit around micro computer, transistor in active use of FET and power circuit and transistor. It has an appendix on transistor and design of bias of FET circuits like small signal transistor circuit and FET circuit.

Silicon on insulator self-aligned transistors

Science.gov (United States)

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

Physical limits of silicon transistors and circuits

International Nuclear Information System (INIS)

Keyes, Robert W

2005-01-01

A discussion on transistors and electronic computing including some history introduces semiconductor devices and the motivation for miniaturization of transistors. The changing physics of field-effect transistors and ways to mitigate the deterioration in performance caused by the changes follows. The limits of transistors are tied to the requirements of the chips that carry them and the difficulties of fabricating very small structures. Some concluding remarks about transistors and limits are presented

Observation of strong reflection of electron waves exiting a ballistic channel at low energy

Energy Technology Data Exchange (ETDEWEB)

Vaz, Canute I.; Campbell, Jason P.; Ryan, Jason T.; Gundlach, David; Cheung, Kin. P., E-mail: Kin.Cheung@NIST.gov [National Institute of Standards and Technology, Gaithersburg, MD 20899-8120 (United States); Liu, Changze [National Institute of Standards and Technology, Gaithersburg, MD 20899-8120 (United States); Institute of Microelectronics, Peking University, Beijing 100871 (China); Southwick, Richard G. [National Institute of Standards and Technology, Gaithersburg, MD 20899-8120 (United States); IBM Research, Albany, NY 12205 (United States); Oates, Anthony S. [Taiwan Semiconductor Manufacturing Corporation, Hsinchu 30844, Taiwan (China); Huang, Ru [Institute of Microelectronics, Peking University, Beijing 100871 (China)

2016-06-15

Wave scattering by a potential step is a ubiquitous concept. Thus, it is surprising that theoretical treatments of ballistic transport in nanoscale devices, from quantum point contacts to ballistic transistors, assume no reflection even when the potential step is encountered upon exiting the device. Experiments so far seem to support this even if it is not clear why. Here we report clear evidence of coherent reflection when electron wave exits the channel of a nanoscale transistor and when the electron energy is low. The observed behavior is well described by a simple rectangular potential barrier model which the Schrodinger’s equation can be solved exactly. We can explain why reflection is not observed in most situations but cannot be ignored in some important situations. Our experiment also represents a direct measurement of electron injection velocity - a critical quantity in nanoscale transistors that is widely considered not measurable.

Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

Science.gov (United States)

Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.

2018-04-01

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

Focal plane optics in far-infrared and submillimeter astronomy

Science.gov (United States)

Hildebrand, R. H.

1985-01-01

The construction of airborne observatories, high mountain-top observatories, and space observatories designed especially for infrared and submillimeter astronomy has opened fields of research requiring new optical techniques. A typical far-IR photometric study involves measurement of a continuum spectrum in several passbands between approx 30 microns and 1000 microns and diffraction-limited mapping of the source. At these wavelengths, diffraction effects strongly influence the design of the field optics systems which couple the incoming flux to the radiation sensors (cold bolometers). The Airy diffraction disk for a typical telescope at submillimeter wavelengths approx 100 microns-1000 microns is many millimeters in diameter; the size of the field stop must be comparable. The dilute radiation at the stop is fed through a Winston nonimaging concentrator to a small cavity containing the bolometer. The purpose of this paper is to review the principles and techniques of infrared field optics systems, including spectral filters, concentrators, cavities, and bolometers (as optical elements), with emphasis on photometric systems for wavelengths longer than 60 microns.

Focal plane optics in far-infrared and submillimeter astronomy

Science.gov (United States)

Hildebrand, R. H.

1986-02-01

The construction of airborne observatories, high mountain-top observatories, and space observatories designed especially for infrared and submillimeter astronomy has opened fields of research requiring new optical techniques. A typical far-IR photometric study involves measurement of a continuum spectrum in several passbands between approx 30 microns and 1000 microns and diffraction-limited mapping of the source. At these wavelengths, diffraction effects strongly influence the design of the field optics systems which couple the incoming flux to the radiation sensors (cold bolometers). The Airy diffraction disk for a typical telescope at submillimeter wavelengths approx 100 microns-1000 microns is many millimeters in diameter; the size of the field stop must be comparable. The dilute radiation at the stop is fed through a Winston nonimaging concentrator to a small cavity containing the bolometer. The purpose of this paper is to review the principles and techniques of infrared field optics systems, including spectral filters, concentrators, cavities, and bolometers (as optical elements), with emphasis on photometric systems for wavelengths longer than 60 microns.

Residual losses in epitaxial thin films of YBa2Cu3O7 from microwave to submillimeter wave frequencies

International Nuclear Information System (INIS)

Miller, D.; Richards, P.L.; Etemad, S.; Inam, A.; Venkatesan, T.; Dutta, B.; Wu, X.D.; Eom, C.B.; Geballe, T.H.; Newman, N.; Cole, B.F.

1991-01-01

We have measured the residual loss in five epitaxial a-b plane films of the high-T c superconductor YBa 2 Cu 3 O 7 . Microwave measurements near 10 GHz were made by resonance techniques at 4 K. Submillimeter measurements from ∼1.5 to 21 THz were made at 2 K by a direct absorption technique. We use a model of weakly coupled superconducting grains and a homogeneous two-fluid model to fit the data for each film below the well-known absorption edge at 13.5 THz. When the penetration depth determined from muon spin rotation measurements is used to constrain each model, the weakly coupled grain model is able to fit the measured absorptivities for all films, but the two-fluid model is less successful

Josephson frequency meter for millimeter and submillimeter wavelengths

Energy Technology Data Exchange (ETDEWEB)

Anischenko, S.E.; Larkin, S.Y.; Chaikovsky, V.I. [State Research Center, Kiev (Ukraine)] [and others

1994-12-31

Frequency measurements of electromagnetic oscillations of millimeter and submillimeter wavebands with frequency growth due to a number of reasons become more and more difficult. First, these frequencies are considered to be cutoff for semiconductor converting devices and one has to use optical measurement methods instead of traditional ones with frequency transfer. Second, resonance measurement methods are characterized by using relatively narrow bands and optical ones are limited in frequency and time resolution due to the limited range and velocity of movement of their mechanical elements as well as the efficiency of these optical techniques decreases with the increase of wavelength due to diffraction losses. That requires the apriori information on the radiation frequency band of the source involved. Method of measuring frequency of harmonic microwave signals in millimeter and submillimeter wavebands based on the ac Josephson effect in superconducting contacts is devoid of all the above drawbacks. This approach offers a number of major advantages over the more traditional measurement methods, that is the one based on frequency conversion, resonance and interferrometric techniques. It can be characterized by high potential accuracy, wide range of frequencies measured, prompt measurement and the opportunity to obtain panoramic display of the results as well as full automation of the measuring process.

Josephson frequency meter for millimeter and submillimeter wavelengths

International Nuclear Information System (INIS)

Anischenko, S.E.; Larkin, S.Y.; Chaikovsky, V.I.

1994-01-01

Frequency measurements of electromagnetic oscillations of millimeter and submillimeter wavebands with frequency growth due to a number of reasons become more and more difficult. First, these frequencies are considered to be cutoff for semiconductor converting devices and one has to use optical measurement methods instead of traditional ones with frequency transfer. Second, resonance measurement methods are characterized by using relatively narrow bands and optical ones are limited in frequency and time resolution due to the limited range and velocity of movement of their mechanical elements as well as the efficiency of these optical techniques decreases with the increase of wavelength due to diffraction losses. That requires the apriori information on the radiation frequency band of the source involved. Method of measuring frequency of harmonic microwave signals in millimeter and submillimeter wavebands based on the ac Josephson effect in superconducting contacts is devoid of all the above drawbacks. This approach offers a number of major advantages over the more traditional measurement methods, that is the one based on frequency conversion, resonance and interferrometric techniques. It can be characterized by high potential accuracy, wide range of frequencies measured, prompt measurement and the opportunity to obtain panoramic display of the results as well as full automation of the measuring process

Power transistor module for high current applications

International Nuclear Information System (INIS)

Cilyo, F.F.

1975-01-01

One of the parts needed for the control system of the 400-GeV accelerator at Fermilab was a power transistor with a safe operating area of 1800A at 50V, dc current gain of 100,000 and 20 kHz bandwidth. Since the commercially available discrete devices and power hybrid packages did not meet these requirements, a power transistor module was developed which performed satisfactorily. By connecting 13 power transistors in parallel, with due consideration for network and heat dissipation problems, and by driving these 13 with another power transistor, a super power transistor is made, having an equivalent current, power, and safe operating area capability of 13 transistors. For higher capabilities, additional modules can be conveniently added. (auth)

LOOKING INTO THE HEARTS OF BOK GLOBULES: MILLIMETER AND SUBMILLIMETER CONTINUUM IMAGES OF ISOLATED STAR-FORMING CORES

International Nuclear Information System (INIS)

Launhardt, R.; Henning, Th.; Khanzadyan, T.; Schmalzl, M.; Wolf, S.; Nutter, D.; Ward-Thompson, D.; Bourke, T. L.; Zylka, R.

2010-01-01

We present the results of a comprehensive infrared, submillimeter, and millimeter continuum emission study of isolated low-mass star-forming cores in 32 Bok globules, with the aim to investigate the process of star formation in these regions. The submillimeter and millimeter dust continuum emission maps together with the spectral energy distributions are used to model and derive the physical properties of the star-forming cores, such as luminosities, sizes, masses, densities, etc. Comparisons with ground-based near-infrared and space-based mid- and far-infrared images from Spitzer are used to reveal the stellar content of the Bok globules, association of embedded young stellar objects (YSOs) with the submillimeter dust cores, and the evolutionary stages of the individual sources. Submillimeter dust continuum emission was detected in 26 out of the 32 globule cores observed. For 18 globules with detected (sub)millimeter cores, we derive evolutionary stages and physical parameters of the embedded sources. We identify nine starless cores, most of which are presumably prestellar, nine Class 0 protostars, and twelve Class I YSOs. Specific source properties like bolometric temperature, core size, and central densities are discussed as a function of evolutionary stage. We find that at least two thirds (16 out of 24) of the star-forming globules studied here show evidence of forming multiple stars on scales between 1000 and 50,000 AU. However, we also find that most of these small prototstar and star groups are comprised of sources with different evolutionary stages, suggesting a picture of slow and sequential star formation in isolated globules.

Analysing organic transistors based on interface approximation

International Nuclear Information System (INIS)

Akiyama, Yuto; Mori, Takehiko

2014-01-01

Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region

Submillimeter-wave measurements of N2 and O2 pressure broadening for HO2 radical generated by Hg-photosensitized reaction

International Nuclear Information System (INIS)

Mizoguchi, A.; Yagi, T.; Kondo, K.; Sato, T.O.; Kanamori, H.

2012-01-01

The N 2 and O 2 pressure broadening coefficients of the pure rotational transitions at 625.66 GHz (N KaKc =10 1-9 -10 0-10 , J=10.5-10.5) and 649.70 GHz (N KaKc =10 2-9 -9 2-8 , J=9.5-8.5) in the vibronic ground state X 2 A′ of the perhydroxyl (HO 2 ) radical have been determined by precise laboratory measurements. For the production of HO 2 , the mercury-photosensitized reaction of the H 2 and O 2 precursors was used to provide an optimum condition for measurement of the pressure broadening coefficient. The Superconducting Submillimeter-wave Limb Emission Sounder (SMILES) was designed to monitor the volume mixing ratio of trace gases including HO 2 in the Earth's upper atmosphere using these transitions. The precise measurement of pressure broadening coefficient γ in terms of the half width at half maximum is required in order to retrieve the atmospheric volume mixing ratio. In this work, γ coefficients of the 625.66 GHz transition were determined for N 2 and O 2 at room temperature as γ(N 2 )=4.085±0.049 MHz/Torr and γ(O 2 )=2.578±0.047 MHz/Torr with 3σ uncertainty. Similarly, the coefficients of the 649.70 GHz transition were determined as γ(N 2 )=3.489±0.094 MHz/Torr and γ(O 2 )=2.615±0.099 MHz/Torr. The air broadening coefficients for the 625.66 GHz and 649.70 GHz lines were estimated at γ(air)=3.769±0.067 MHz and 3.298±0.099 MHz respectively, where the uncertainty includes possible systematic errors. The newly determined coefficients are compared with previous results and we discuss the advantage of the mercury-photosensitized reaction for HO 2 generation. In comparison with those of other singlet molecules, the pressure broadening coefficients of the HO 2 radical are not much affected by the existence of an unpaired electron.

Impact of Process Technologies on ELDRS of Bipolar Transistors

International Nuclear Information System (INIS)

Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Zheng Yuzhan

2010-01-01

Radiation effects under different dose rates and annealing behaviors of domestic bipolar transistors, with same manufacture technology, were investigated.These transistors include NPN transistors of various emitter area, and LPNP transistors with different doping concentrations in emitter. It is shown that different types of transistors have different radiation responses. The results of NPN transistors show that more degradation occurs at less emitter area. Yet, the results of LPNP transistors demonstrate that transistors with lightly doped emitter are more sensitive to radiation, compared with heavily doped emitter. Finally,the mechanisms of the difference between various radiation responses were analyzed. (authors)

EMPIRICAL PREDICTIONS FOR (SUB-)MILLIMETER LINE AND CONTINUUM DEEP FIELDS

Energy Technology Data Exchange (ETDEWEB)

Da Cunha, Elisabete; Walter, Fabian; Decarli, Roberto; Rix, Hans-Walter [Max-Planck-Institut fuer Astronomie, Koenigstuhl 17, D-69117 Heidelberg (Germany); Bertoldi, Frank [Argelander Institute for Astronomy, University of Bonn, Auf dem Huegel 71, D-53121 Bonn (Germany); Carilli, Chris [National Radio Astronomy Observatory, Pete V. Domenici Array Science Center, P.O. Box O, Socorro, NM 87801 (United States); Daddi, Emanuele; Elbaz, David; Sargent, Mark [Laboratoire AIM, CEA/DSM-CNRS-Universite Paris Diderot, Irfu/Service d' Astrophysique, CEA Saclay, Orme des Merisiers, F-91191 Gif-sur-Yvette Cedex (France); Ivison, Rob [UK Astronomy Technology Centre, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Maiolino, Roberto [Cavendish Laboratory, University of Cambridge, 19 J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Riechers, Dominik [Astronomy Department, California Institute of Technology, MC 249-17, 1200 East California Boulevard, Pasadena, CA 91125 (United States); Smail, Ian [Institute for Computational Cosmology, Durham University, South Road, Durham DH1 3LE (United Kingdom); Weiss, Axel, E-mail: cunha@mpia.de [Max-Planck-Institut fuer Radioastronomie, Auf dem Huegel 69, D-53121 Bonn (Germany)

2013-03-01

Modern (sub-)millimeter/radio interferometers such as ALMA, JVLA, and the PdBI successor NOEMA will enable us to measure the dust and molecular gas emission from galaxies that have luminosities lower than the Milky Way, out to high redshifts and with unprecedented spatial resolution and sensitivity. This will provide new constraints on the star formation properties and gas reservoir in galaxies throughout cosmic times through dedicated deep field campaigns targeting the CO/[C II] lines and dust continuum emission in the (sub-)millimeter regime. In this paper, we present empirical predictions for such line and continuum deep fields. We base these predictions on the deepest available optical/near-infrared Advanced Camera for Surveys and NICMOS data on the Hubble Ultra Deep Field (over an area of about 12 arcmin{sup 2}). Using a physically motivated spectral energy distribution model, we fit the observed optical/near-infrared emission of 13,099 galaxies with redshifts up to z = 5, and obtain median-likelihood estimates of their stellar mass, star formation rate, dust attenuation, and dust luminosity. We combine the attenuated stellar spectra with a library of infrared emission models spanning a wide range of dust temperatures to derive statistical constraints on the dust emission in the infrared and (sub-)millimeter which are consistent with the observed optical/near-infrared emission in terms of energy balance. This allows us to estimate, for each galaxy, the (sub-)millimeter continuum flux densities in several ALMA, PdBI/NOEMA, and JVLA bands. As a consistency check, we verify that the 850 {mu}m number counts and extragalactic background light derived using our predictions are consistent with previous observations. Using empirical relations between the observed CO/[C II] line luminosities and the infrared luminosity of star-forming galaxies, we infer the luminosity of the CO(1-0) and [C II] lines from the estimated infrared luminosity of each galaxy in our sample

The Submillimeter Polarization of Sgr A*

Science.gov (United States)

Marrone, Daniel P.; Moran, James M.; Zhao, Jun-Hui; Rao, Ramprasad

2006-12-01

We report on the submillimeter properties of Sgr A* derived from observations with the Submillimeter Array and its polarimeter. We ftid that the spectrum of Sgr A* between 230 and 690 GHz is slightly decreasing when measured simultaneously, indicating a transition to optically thin emission around 300 400 GHz. We also present very sensitive and well calibrated measurements of the polarization of Sgr A* at 230 and 345 GHz. With these data we are able to show for the frst time that the polarization of Sgr A* varies on hour timescales, as has been observed for the total intensity. On one night we fhd variability that may arise from a polarized "blob" orbiting the black hole. Finally, we use the ensemble of observations to determine the rotation measure. This represents the frst statistically significant rotation measure determination and the only one made without resorting to comparing position angles measured at separate epochs. We frid a rotation measure of (-5.6 ± 0.7) × 105 rad m2, with no evidence for variability on inter-day timescales at the level of the measurement error. The stability constrains interday flictuations in the accretion rate to 8%. The mean intrinsic polarization position angle is 167°±7° and we detect variations of 31+18-9 degrees. This separation of intrinsic polarization changes and possible rotation measure flictuations is now possible because of the frequency coverage and sensitivity of our data. The observable rotation measure restricts the accretion rate to the range 2 × 10-7 Mdot o yr-1 to 2 × 10-9 Mdot o yr-1, if the magnetic ffeld is near equipartition and ordered.

Photosensitive graphene transistors.

Science.gov (United States)

Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

2014-08-20

High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Submillimeter Spectrum of MnH and MnD (X7Σ+)

Science.gov (United States)

Halfen, D. T.; Ziurys, L. M.

2008-01-01

The submillimeter-wave spectrum of the MnH and MnD radicals in their 7Σ+ ground states has been measured in the laboratory using direct absorption techniques. These species were created in the gas phase by the reaction of manganese vapor, produced in a Broida-type oven, with either H2 or D2 gas in the presence of a DC discharge. The N = 0 → 1 transition of MnH near 339 GHz was recorded, which consisted of multiple hyperfine components arising from both the manganese and hydrogen nuclear spins. The N = 2 → 3 transition of MnD near 517 GHz was measured as well, but in this case only the manganese hyperfine interactions were resolved. Both data sets were analyzed with a Hund's case b Hamiltonian, and rotational, fine structure, magnetic hyperfine, and electric quadrupole constants have been determined for the two manganese species. An examination of the magnetic hyperfine constants shows that MnH is primarily an ionic species, but has more covalent character than MnF. MnH is a good candidate species for astronomical searches with Herschel, particularly toward material associated with luminous blue variable stars.

Heterodyne Detection in MM & Sub-mm Waves Developed at Paris Observatory

Science.gov (United States)

Beaudin, G.; Encrenaz, P.

Millimeter and submillimeter-wave observations provide important informations for the studies of atmospheric chemistry and of astrochemistry (molecular clouds, stars formation, galactic study, comets and cosmology). But, these observations depend strongly on instrumentation techniques and on the site quality. New techniques or higher detector performances result in unprecedented observations and sometimes, the observational needs drive developments of new detector technologies, for example, superconducting junctions (SIS mixers) because of its high sensitivity in heterodyne detection in the millimeter and submillimeter wave range (100 GHz - 700 GHz), HEB (Hot Electron Bolometer) mixers which are being developed by several groups for application in THz observations. For the submillimetre wavelengths heterodyne receivers, the local oscillator (LO) is still a critical element. So far, solid state sources are often not powerful enough for most of the applications at millimetre or sub-millimetre wavelengths: large efforts using new planar components and integrated circuits on membrane substrate or new techniques (photomixing, QCL) are now in progress in few groups. The new large projects as SOFIA, Herschel, ALMA and the post-Herschel missions for astronomy, the other projects for aeronomy, meteorology (Megha-tropiques-Saphir) and for planetary science (ROSETTA, Mars exploration, ...), will benefit from the new developments to hunt more molecules.

Gold nanoparticle-pentacene memory-transistors

OpenAIRE

Novembre , Christophe; Guerin , David; Lmimouni , Kamal; Gamrat , Christian; Vuillaume , Dominique

2008-01-01

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off sta...

The Complete Semiconductor Transistor and Its Incomplete Forms

International Nuclear Information System (INIS)

Jie Binbin; Sah, C.-T.

2009-01-01

This paper describes the definition of the complete transistor. For semiconductor devices, the complete transistor is always bipolar, namely, its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions. Partially complete or incomplete transistors, via coined names or/and designed physical geometries, included the 1949 Shockley p/n junction transistor (later called Bipolar Junction Transistor, BJT), the 1952 Shockley unipolar 'field-effect' transistor (FET, later called the p/n Junction Gate FET or JGFET), as well as the field-effect transistors introduced by later investigators. Similarities between the surface-channel MOS-gate FET (MOSFET) and the volume-channel BJT are illustrated. The bipolar currents, identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base, led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices, and also the importance of the terminal contacts.

Ionoacoustic characterization of the proton Bragg peak with submillimeter accuracy

Energy Technology Data Exchange (ETDEWEB)

Assmann, W., E-mail: walter.assmann@lmu.de; Reinhardt, S.; Lehrack, S.; Edlich, A.; Thirolf, P. G.; Parodi, K. [Department for Medical Physics, Ludwig-Maximilians-Universität München, Am Coulombwall 1, Garching 85748 (Germany); Kellnberger, S.; Omar, M.; Ntziachristos, V. [Institute for Biological and Medical Imaging, Technische Universität München and Helmholtz Zentrum München, Ingolstädter Landstrasse 1, Neuherberg 85764 (Germany); Moser, M.; Dollinger, G. [Institute for Applied Physics and Measurement Technology, Universität der Bundeswehr, Werner-Heisenberg-Weg 39, Neubiberg 85577 (Germany)

2015-02-15

Purpose: Range verification in ion beam therapy relies to date on nuclear imaging techniques which require complex and costly detector systems. A different approach is the detection of thermoacoustic signals that are generated due to localized energy loss of ion beams in tissue (ionoacoustics). Aim of this work was to study experimentally the achievable position resolution of ionoacoustics under idealized conditions using high frequency ultrasonic transducers and a specifically selected probing beam. Methods: A water phantom was irradiated by a pulsed 20 MeV proton beam with varying pulse intensity and length. The acoustic signal of single proton pulses was measured by different PZT-based ultrasound detectors (3.5 and 10 MHz central frequencies). The proton dose distribution in water was calculated by Geant4 and used as input for simulation of the generated acoustic wave by the matlab toolbox k-WAVE. Results: In measurements from this study, a clear signal of the Bragg peak was observed for an energy deposition as low as 10{sup 12} eV. The signal amplitude showed a linear increase with particle number per pulse and thus, dose. Bragg peak position measurements were reproducible within ±30 μm and agreed with Geant4 simulations to better than 100 μm. The ionoacoustic signal pattern allowed for a detailed analysis of the Bragg peak and could be well reproduced by k-WAVE simulations. Conclusions: The authors have studied the ionoacoustic signal of the Bragg peak in experiments using a 20 MeV proton beam with its correspondingly localized energy deposition, demonstrating submillimeter position resolution and providing a deep insight in the correlation between the acoustic signal and Bragg peak shape. These results, together with earlier experiments and new simulations (including the results in this study) at higher energies, suggest ionoacoustics as a technique for range verification in particle therapy at locations, where the tumor can be localized by ultrasound

CLUMPY AND EXTENDED STARBURSTS IN THE BRIGHTEST UNLENSED SUBMILLIMETER GALAXIES

Energy Technology Data Exchange (ETDEWEB)

Iono, Daisuke; Hatsukade, Bunyo; Kawabe, Ryohei; Matsuda, Yuichi; Nakanishi, Kouichiro [National Astronomical Observatory of Japan, National Institutes of Natural Sciences, 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan); Yun, Min S.; Wilson, Grant [University of Massachusetts, Department of Astronomy, 710 North Pleasant Street, Amherst, MA 01003 (United States); Aretxaga, Itziar; Hughes, David [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), Luis Enrique Erro 1, Sta. Ma. Tonantzintla, Puebla (Mexico); Ikarashi, Soh [Kapteyn Astronomical Institute, University of Groningen, P.O. Box 800, 9700AV Groningen (Netherlands); Izumi, Takuma; Kohno, Kotaro; Tamura, Yoichi; Umehata, Hideki [Institute of Astronomy, The University of Tokyo, 2-21-1 Osawa, Mitaka, Tokyo 181-0015 (Japan); Lee, Minju; Saito, Toshiki [Department of Astronomy, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 133-0033 (Japan); Ueda, Junko [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Michiyama, Tomonari; Ando, Misaki, E-mail: d.iono@nao.ac.jp [SOKENDAI (The Graduate University for Advanced Studies), 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan)

2016-09-20

The central structure in three of the brightest unlensed z = 3–4 submillimeter galaxies is investigated through 0.″015–0.″05 (120–360 pc) 860 μ m continuum images obtained using the Atacama Large Millimeter/submillimeter Array (ALMA). The distribution in the central kiloparsec in AzTEC1 and AzTEC8 is extremely complex, and they are composed of multiple ∼200 pc clumps. AzTEC4 consists of two sources that are separated by ∼1.5 kpc, indicating a mid-stage merger. The peak star formation rate densities in the central clumps are ∼300–3000 M {sub ⊙} yr{sup −1} kpc{sup −2}, suggesting regions with extreme star formation near the Eddington limit. By comparing the flux obtained by ALMA and Submillimeter Array, we find that 68%–90% of the emission is extended (≳1 kpc) in AzTEC4 and 8. For AzTEC1, we identify at least 11 additional compact (∼200 pc) clumps in the extended 3–4 kpc region. Overall, the data presented here suggest that the luminosity surface densities observed at ≲150 pc scales are roughly similar to that observed in local ULIRGs, as in the eastern nucleus of Arp 220. Between 10% and 30% of the 860 μ m continuum is concentrated in clumpy structures in the central kiloparsec, while the remaining flux is distributed over ≳1 kpc regions, some of which could also be clumpy. These sources can be explained by a rapid inflow of gas such as a merger of gas-rich galaxies, surrounded by extended and clumpy starbursts. However, the cold mode accretion model is not ruled out.

The status of MUSIC: the multiwavelength sub-millimeter inductance camera

Science.gov (United States)

Sayers, Jack; Bockstiegel, Clint; Brugger, Spencer; Czakon, Nicole G.; Day, Peter K.; Downes, Thomas P.; Duan, Ran P.; Gao, Jiansong; Gill, Amandeep K.; Glenn, Jason; Golwala, Sunil R.; Hollister, Matthew I.; Lam, Albert; LeDuc, Henry G.; Maloney, Philip R.; Mazin, Benjamin A.; McHugh, Sean G.; Miller, David A.; Mroczkowski, Anthony K.; Noroozian, Omid; Nguyen, Hien Trong; Schlaerth, James A.; Siegel, Seth R.; Vayonakis, Anastasios; Wilson, Philip R.; Zmuidzinas, Jonas

2014-08-01

The Multiwavelength Sub/millimeter Inductance Camera (MUSIC) is a four-band photometric imaging camera operating from the Caltech Submillimeter Observatory (CSO). MUSIC is designed to utilize 2304 microwave kinetic inductance detectors (MKIDs), with 576 MKIDs for each observing band centered on 150, 230, 290, and 350 GHz. MUSIC's field of view (FOV) is 14' square, and the point-spread functions (PSFs) in the four observing bands have 45'', 31'', 25'', and 22'' full-widths at half maximum (FWHM). The camera was installed in April 2012 with 25% of its nominal detector count in each band, and has subsequently completed three short sets of engineering observations and one longer duration set of early science observations. Recent results from on-sky characterization of the instrument during these observing runs are presented, including achieved map- based sensitivities from deep integrations, along with results from lab-based measurements made during the same period. In addition, recent upgrades to MUSIC, which are expected to significantly improve the sensitivity of the camera, are described.

The Submillimeter Polarization of Sgr A*

Energy Technology Data Exchange (ETDEWEB)

Marrone, Daniel P [Harvard-Smithsonian Center for Astrophysics, 60 Garden St., Cambridge, MA 02138 (United States); Moran, James M [Harvard-Smithsonian Center for Astrophysics, 60 Garden St., Cambridge, MA 02138 (United States); Zhao, Jun-Hui [Harvard-Smithsonian Center for Astrophysics, 60 Garden St., Cambridge, MA 02138 (United States); Rao, Ramprasad [Inst. of Ast. and Astrophys., Academia Sinica, PO Box 23-141, Taipei 10617, Taiwan (China)

2006-12-15

We report on the submillimeter properties of Sgr A* derived from observations with the Submillimeter Array and its polarimeter. We ftid that the spectrum of Sgr A* between 230 and 690 GHz is slightly decreasing when measured simultaneously, indicating a transition to optically thin emission around 300-400 GHz. We also present very sensitive and well calibrated measurements of the polarization of Sgr A* at 230 and 345 GHz. With these data we are able to show for the frst time that the polarization of Sgr A* varies on hour timescales, as has been observed for the total intensity. On one night we fhd variability that may arise from a polarized 'blob' orbiting the black hole. Finally, we use the ensemble of observations to determine the rotation measure. This represents the frst statistically significant rotation measure determination and the only one made without resorting to comparing position angles measured at separate epochs. We frid a rotation measure of (-5.6 {+-} 0.7) x 10{sup 5} rad m{sup 2}, with no evidence for variability on inter-day timescales at the level of the measurement error. The stability constrains interday flictuations in the accretion rate to 8%. The mean intrinsic polarization position angle is 167{sup 0}{+-}7{sup 0} and we detect variations of 31{sup +18}{sub -9} degrees. This separation of intrinsic polarization changes and possible rotation measure flictuations is now possible because of the frequency coverage and sensitivity of our data. The observable rotation measure restricts the accretion rate to the range 2 x 10{sup -7} M o-dot yr{sup -1} to 2 x 10{sup -9} M o-dot yr{sup -1}, if the magnetic field is near equipartition and ordered.

The Submillimeter Polarization of Sgr A*

International Nuclear Information System (INIS)

Marrone, Daniel P; Moran, James M; Zhao, Jun-Hui; Rao, Ramprasad

2006-01-01

We report on the submillimeter properties of Sgr A* derived from observations with the Submillimeter Array and its polarimeter. We ftid that the spectrum of Sgr A* between 230 and 690 GHz is slightly decreasing when measured simultaneously, indicating a transition to optically thin emission around 300-400 GHz. We also present very sensitive and well calibrated measurements of the polarization of Sgr A* at 230 and 345 GHz. With these data we are able to show for the frst time that the polarization of Sgr A* varies on hour timescales, as has been observed for the total intensity. On one night we fhd variability that may arise from a polarized 'blob' orbiting the black hole. Finally, we use the ensemble of observations to determine the rotation measure. This represents the frst statistically significant rotation measure determination and the only one made without resorting to comparing position angles measured at separate epochs. We frid a rotation measure of (-5.6 ± 0.7) x 10 5 rad m 2 , with no evidence for variability on inter-day timescales at the level of the measurement error. The stability constrains interday flictuations in the accretion rate to 8%. The mean intrinsic polarization position angle is 167 0 ±7 0 and we detect variations of 31 +18 -9 degrees. This separation of intrinsic polarization changes and possible rotation measure flictuations is now possible because of the frequency coverage and sensitivity of our data. The observable rotation measure restricts the accretion rate to the range 2 x 10 -7 M o-dot yr -1 to 2 x 10 -9 M o-dot yr -1 , if the magnetic field is near equipartition and ordered

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors.

Science.gov (United States)

Yoo, Hocheon; Ghittorelli, Matteo; Smits, Edsger C P; Gelinck, Gerwin H; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2016-10-20

Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.

Ultra-high gain diffusion-driven organic transistor

Science.gov (United States)

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-01-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics. PMID:26829567

High-Performance Vertical Organic Electrochemical Transistors.

Science.gov (United States)

Donahue, Mary J; Williamson, Adam; Strakosas, Xenofon; Friedlein, Jacob T; McLeod, Robert R; Gleskova, Helena; Malliaras, George G

2018-02-01

Organic electrochemical transistors (OECTs) are promising transducers for biointerfacing due to their high transconductance, biocompatibility, and availability in a variety of form factors. Most OECTs reported to date, however, utilize rather large channels, limiting the transistor performance and resulting in a low transistor density. This is typically a consequence of limitations associated with traditional fabrication methods and with 2D substrates. Here, the fabrication and characterization of OECTs with vertically stacked contacts, which overcome these limitations, is reported. The resulting vertical transistors exhibit a reduced footprint, increased intrinsic transconductance of up to 57 mS, and a geometry-normalized transconductance of 814 S m -1 . The fabrication process is straightforward and compatible with sensitive organic materials, and allows exceptional control over the transistor channel length. This novel 3D fabrication method is particularly suited for applications where high density is needed, such as in implantable devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

350 μm POLARIMETRY FROM THE CALTECH SUBMILLIMETER OBSERVATORY

International Nuclear Information System (INIS)

Dotson, Jessie L.; Vaillancourt, John E.; Kirby, Larry; Hildebrand, Roger H.; Dowell, C. Darren; Davidson, Jacqueline A.

2010-01-01

We present a summary of data obtained with the 350 μm polarimeter, Hertz, at the Caltech Submillimeter Observatory. We give tabulated results and maps showing polarization vectors and intensity contours. The summary includes over 4300 individual measurements in 56 Galactic sources and two galaxies. Of these measurements, 2153 have P ≥ 3σ p statistical significance. The median polarization of the entire data set is 1.46%.

In Situ Guided Wave Structural Health Monitoring System

Science.gov (United States)

Zhao, George; Tittmann, Bernhard R.

2011-01-01

Aircraft engine rotating equipment operates at high temperatures and stresses. Noninvasive inspection of microcracks in those components poses a challenge for nondestructive evaluation. A low-cost, low-profile, high-temperature ultrasonic guided wave sensor was developed that detects cracks in situ. The transducer design provides nondestructive evaluation of structures and materials. A key feature of the sensor is that it withstands high temperatures and excites strong surface wave energy to inspect surface and subsurface cracks. The sol-gel bismuth titanate-based surface acoustic wave (SAW) sensor can generate efficient SAWs for crack inspection. The sensor is very thin (submillimeter) and can generate surface waves up to 540 C. Finite element analysis of the SAW transducer design was performed to predict the sensor behavior, and experimental studies confirmed the results. The sensor can be implemented on structures of various shapes. With a spray-coating process, the sensor can be applied to the surface of large curvatures. It has minimal effect on airflow or rotating equipment imbalance, and provides good sensitivity.

High transconductance organic electrochemical transistors

Science.gov (United States)

Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

2013-07-01

The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications.

High transconductance organic electrochemical transistors

Science.gov (United States)

Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

2013-01-01

The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications. PMID:23851620

Recent progress in photoactive organic field-effect transistors.

Science.gov (United States)

Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

2014-04-01

Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

Recent progress in photoactive organic field-effect transistors

International Nuclear Information System (INIS)

Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

2014-01-01

Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts. (review)

Programmable automated transistor test system

International Nuclear Information System (INIS)

Truong, L.V.; Sundberg, G.R.

1986-01-01

The paper describes a programmable automated transistor test system (PATTS) and its utilization to evaluate bipolar transistors and Darlingtons, and such MOSFET and special types as can be accommodated with the PATTS base-drive. An application of a pulsed power technique at low duty cycles in a non-destructive test is used to examine the dynamic switching characteristic curves of power transistors. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software. In addition a library of test data is established on disks, tapes, and hard copies for future reference

Universal power transistor base drive control unit

Science.gov (United States)

Gale, Allan R.; Gritter, David J.

1988-01-01

A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

Power-Combined GaN Amplifier with 2.28-W Output Power at 87 GHz

Science.gov (United States)

Fung, King Man; Ward, John; Chattopadhyay, Goutam; Lin, Robert H.; Samoska, Lorene A.; Kangaslahti, Pekka P.; Mehdi, Imran; Lambrigtsen, Bjorn H.; Goldsmith, Paul F.; Soria, Mary M.;

Low-background transistors for application in nuclear electronics

International Nuclear Information System (INIS)

Krasnokutskij, R.N.; Kurchaninov, L.L.; Fedyakin, N.N.; Shuvalov, R.S.

1988-01-01

Investigations of silicon transistors were carried out to determine transistors with low value of base distributed resistance (R). Measurement results for R and current amplification coefficient β are presented for bipolar transistor several types. Correlations between R and β were studied. KT 399A, 2T640A and KT3117B transistors are found to be most adequate ones as a base for low-background amplifier development

3C 220.3: A Radio Galaxy Lensing a Submillimeter Galaxy

NARCIS (Netherlands)

Haas, Martin; Leipski, Christian; Barthel, Peter; Wilkes, Belinda J.; Vegetti, Simona; Bussmann, R. Shane; Willner, S. P.; Westhues, Christian; Ashby, Matthew L. N.; Chini, Rolf; Clements, David L.; Fassnacht, Christopher D.; Horesh, Assaf; Klaas, Ulrich; Koopmans, Léon V. E.; Kuraszkiewicz, Joanna; Lagattuta, David J.; Meisenheimer, Klaus; Stern, Daniel; Wylezalek, Dominika

2014-01-01

Herschel Space Observatory photometry and extensive multiwavelength follow-up have revealed that the powerful radio galaxy (PRG) 3C 220.3 at z = 0.685 acts as a gravitational lens for a background submillimeter galaxy (SMG) at z = 2.221. At an observed wavelength of 1 mm, the SMG is lensed into

Photon caliper to achieve submillimeter positioning accuracy

Science.gov (United States)

Gallagher, Kyle J.; Wong, Jennifer; Zhang, Junan

2017-09-01

The purpose of this study was to demonstrate the feasibility of using a commercial two-dimensional (2D) detector array with an inherent detector spacing of 5 mm to achieve submillimeter accuracy in localizing the radiation isocenter. This was accomplished by delivering the Vernier ‘dose’ caliper to a 2D detector array where the nominal scale was the 2D detector array and the non-nominal Vernier scale was the radiation dose strips produced by the high-definition (HD) multileaf collimators (MLCs) of the linear accelerator. Because the HD MLC sequence was similar to the picket fence test, we called this procedure the Vernier picket fence (VPF) test. We confirmed the accuracy of the VPF test by offsetting the HD MLC bank by known increments and comparing the known offset with the VPF test result. The VPF test was able to determine the known offset within 0.02 mm. We also cross-validated the accuracy of the VPF test in an evaluation of couch hysteresis. This was done by using both the VPF test and the ExacTrac optical tracking system to evaluate the couch position. We showed that the VPF test was in agreement with the ExacTrac optical tracking system within a root-mean-square value of 0.07 mm for both the lateral and longitudinal directions. In conclusion, we demonstrated the VPF test can determine the offset between a 2D detector array and the radiation isocenter with submillimeter accuracy. Until now, no method to locate the radiation isocenter using a 2D detector array has been able to achieve such accuracy.

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Lim, Jong-Won, E-mail: jwlim@etri.re.kr [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Park, Hyung-Moo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Division of Electronics and Electrical Engineering, Dongguk University, Seoul (Korea, Republic of)

2013-11-29

We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f{sub T}) of 18 GHz, and a maximum oscillation frequency (f{sub max}) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz.

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

International Nuclear Information System (INIS)

Lim, Jong-Won; Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo; Park, Hyung-Moo

2013-01-01

We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f T ) of 18 GHz, and a maximum oscillation frequency (f max ) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz

SUBMILLIMETER-HCN DIAGRAM FOR ENERGY DIAGNOSTICS IN THE CENTERS OF GALAXIES

Energy Technology Data Exchange (ETDEWEB)

Izumi, Takuma; Kohno, Kotaro [Institute of Astronomy, School of Science, The University of Tokyo, 2-21-1 Osawa, Mitaka, Tokyo 181-0015 (Japan); Aalto, Susanne [Department of Earth and Space Sciences, Chalmers University of Technology, Onsala Observatory, SE-439 94 Onsala (Sweden); Espada, Daniel; Martín, Sergio; Nakanishi, Kouichiro [Joint ALMA Observatory, Alonso de Córdova, 3107, Vitacura, Santiago 763-0355 (Chile); Fathi, Kambiz [Stockholm Observatory, Department of Astronomy, Stockholm University, AlbaNova Centre, SE-106 91 Stockholm (Sweden); Harada, Nanase; Hsieh, Pei-Ying; Matsushita, Satoki [Academia Sinica, Institute of Astronomy and Astrophysics, P.O. Box 23-141, Taipei 10617, Taiwan (China); Hatsukade, Bunyo; Imanishi, Masatoshi [National Astronomical Observatory of Japan, 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan); Krips, Melanie [Institut de Radio Astronomie Millimétrique, 300 rue de la Piscine, Domaine Universitaire, F-38406 St. Martin d’Hères (France); Meier, David S. [Department of Physics, New Mexico Institute of Mining and Technology, 801 Leroy Place, Soccoro, NM 87801 (United States); Nakai, Naomasa [Department of Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Ten-nodai, Tsukuba, Ibaraki 305-8571 (Japan); Schinnerer, Eva [Max Planck Institute for Astronomy, Königstuhl 17, Heidelberg D-69117 (Germany); Sheth, Kartik [NASA, 300 E Street SW, Washington, DC 20546 (United States); Terashima, Yuichi [Department of Physics, Ehime University, 2-5 Bunkyo-cho, Matsuyama, Ehime 790-8577 (Japan); Turner, Jean L., E-mail: takumaizumi@ioa.s.u-tokyo.ac.jp [Department of Physics and Astronomy, UCLA, 430 Portola Plaza, Los Angeles, CA 90095-1547 (United States)

2016-02-10

Compiling data from literature and the Atacama Large Millimeter/submillimeter Array archive, we show enhanced HCN(4–3)/HCO{sup +}(4–3) and/or HCN(4–3)/CS(7–6) integrated intensity ratios in circumnuclear molecular gas around active galactic nuclei (AGNs) compared to those in starburst (SB) galaxies (submillimeter HCN enhancement). The number of sample galaxies is significantly increased from our previous work. We expect that this feature could potentially be an extinction-free energy diagnostic tool of nuclear regions of galaxies. Non-LTE radiative transfer modelings of the above molecular emission lines involving both collisional and radiative excitation, as well as a photon trapping effect, were conducted to investigate the cause of the high line ratios in AGNs. As a result, we found that enhanced abundance ratios of HCN to HCO{sup +} and HCN to CS in AGNs as compared to SB galaxies by a factor of a few to even ≳10 are a plausible explanation for the submillimeter HCN enhancement. However, a counterargument of a systematically higher gas density in AGNs than in SB galaxies can also be a plausible scenario. Although we cannot fully distinguish these two scenarios at this moment owing to an insufficient amount of multi-transition, multi-species data, the former scenario is indicative of abnormal chemical composition in AGNs. Regarding the actual mechanism to realize the composition, we suggest that it is difficult with conventional gas-phase X-ray-dominated region ionization models to reproduce the observed high line ratios. We might have to take into account other mechanisms such as neutral–neutral reactions that are efficiently activated in high-temperature environments and/or mechanically heated regions to further understand the high line ratios in AGNs.

Millimeter‐wave INP DHBT power amplifier based on power‐optimized cascode configuration

DEFF Research Database (Denmark)

Johansen, Tom K.; Yan, Lei; Dupuy, Jean‐Yves

2013-01-01

This letter describes the use of a power‐optimized cascode configuration for obtaining maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined power amplifier (PA). The PA has been fabricated in a high‐speed InP double heterojunction bipolar transistor technology and ...... configuration at mm‐wave frequencies are confirmed by both simulations and experimental results. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:1178–1182, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27477...

Determination of radial peculiar velocities of galaxy clusters by means of the submillimeter spectrophotometry

International Nuclear Information System (INIS)

Sholomitskij, G.B.

1984-01-01

The possibility is considered to obtain from the extraatmospheric submillimeter spectrophotometry of galaxy clusters the ratios vsub(r)/Tsub(e) for clusters intergalactic gas that permits, together with the X-ray measurements of electronic temperature Tsub(e) in the case of hot scattering gas to determine absolute radial peculiar velocities vsub(r) of galaxy clusters relative to the relic radiation. By simulating such peculiar velocities as an example for the system of bandpass filters in the wavelength range 300 μm - 2 mm the accuracy of vsub(r) estimates is proved to be about 300 km/s (not taking into account the errors in Tsub(e)) the sensitivity of deeply cooled submillimeter bolometers being 1x10 -15 W/Hzsup(1/2)

Planar-Processed Polymer Transistors.

Science.gov (United States)

Xu, Yong; Sun, Huabin; Shin, Eul-Yong; Lin, Yen-Fu; Li, Wenwu; Noh, Yong-Young

2016-10-01

Planar-processed polymer transistors are proposed where the effective charge injection and the split unipolar charge transport are all on the top surface of the polymer film, showing ideal device characteristics with unparalleled performance. This technique provides a great solution to the problem of fabrication limitations, the ambiguous operating principle, and the performance improvements in practical applications of conjugated-polymer transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Basic matrix algebra and transistor circuits

CERN Document Server

Zelinger, G

1963-01-01

Basic Matrix Algebra and Transistor Circuits deals with mastering the techniques of matrix algebra for application in transistors. This book attempts to unify fundamental subjects, such as matrix algebra, four-terminal network theory, transistor equivalent circuits, and pertinent design matters. Part I of this book focuses on basic matrix algebra of four-terminal networks, with descriptions of the different systems of matrices. This part also discusses both simple and complex network configurations and their associated transmission. This discussion is followed by the alternative methods of de

Graphene-based flexible and stretchable thin film transistors.

Science.gov (United States)

Yan, Chao; Cho, Jeong Ho; Ahn, Jong-Hyun

2012-08-21

Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.

The Bipolar Field-Effect Transistor: XIII. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

International Nuclear Information System (INIS)

Sah, C.-T.; Jie Binbin

2009-01-01

This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its one-transistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These examples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impurethin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFT). Figures are given with the cross-section views containing the electron and hole concentration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.

Highly Crumpled All-Carbon Transistors for Brain Activity Recording.

Science.gov (United States)

Yang, Long; Zhao, Yan; Xu, Wenjing; Shi, Enzheng; Wei, Wenjing; Li, Xinming; Cao, Anyuan; Cao, Yanping; Fang, Ying

2017-01-11

Neural probes based on graphene field-effect transistors have been demonstrated. Yet, the minimum detectable signal of graphene transistor-based probes is inversely proportional to the square root of the active graphene area. This fundamentally limits the scaling of graphene transistor-based neural probes for improved spatial resolution in brain activity recording. Here, we address this challenge using highly crumpled all-carbon transistors formed by compressing down to 16% of its initial area. All-carbon transistors, chemically synthesized by seamless integration of graphene channels and hybrid graphene/carbon nanotube electrodes, maintained structural integrity and stable electronic properties under large mechanical deformation, whereas stress-induced cracking and junction failure occurred in conventional graphene/metal transistors. Flexible, highly crumpled all-carbon transistors were further verified for in vivo recording of brain activity in rats. These results highlight the importance of advanced material and device design concepts to make improvements in neuroelectronics.

High Accuracy Transistor Compact Model Calibrations

Energy Technology Data Exchange (ETDEWEB)

Hembree, Charles E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Mar, Alan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Robertson, Perry J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

2015-09-01

Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirements require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.

The JCMT Transient Survey: Detection of Submillimeter Variability in a Class I Protostar EC 53 in Serpens Main

Energy Technology Data Exchange (ETDEWEB)

Yoo, Hyunju; Cho, Jungyeon [Department of Astronomy and Space Science, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134 (Korea, Republic of); Lee, Jeong-Eun [School of Space Research, Kyung Hee University, 1732, Deogyeong-Daero, Giheung-gu Yongin-shi, Gyunggi-do 17104 (Korea, Republic of); Mairs, Steve; Johnstone, Doug [Department of Physics and Astronomy, University of Victoria, Victoria, BC, V8P 1A1 (Canada); Herczeg, Gregory J. [Kavli Institute for Astronomy and Astrophysics, Peking University, Yiheyuan 5, Haidian Qu, 100871 Beijing (China); Kang, Sung-ju; Kang, Miju, E-mail: jeongeun.lee@khu.ac.kr [Korea Astronomy and Space Science Institute, 776 Daedeokdae-ro, Yuseong-gu, Daejeon 34055 (Korea, Republic of); Collaboration: JCMT Transient Team

2017-11-01

During the protostellar phase of stellar evolution, accretion onto the star is expected to be variable, but this suspected variability has been difficult to detect because protostars are deeply embedded. In this paper, we describe a submillimeter luminosity burst of the Class I protostar EC 53 in Serpens Main, the first variable found during our dedicated JCMT/SCUBA-2 monitoring program of eight nearby star-forming regions. EC 53 remained quiescent for the first six months of our survey, from 2016 February to August. The submillimeter emission began to brighten in 2016 September, reached a peak brightness of 1.5 times the faint state, and has been decaying slowly since 2017 February. The change in submillimeter brightness is interpreted as dust heating in the envelope, generated by a luminosity increase of the protostar of a factor of ≥4. The 850 μ m light curve resembles the historical K -band light curve, which varies by a factor of ∼6 with a 543 period and is interpreted as accretion variability excited by interactions between the accretion disk and a close binary system. The predictable detections of accretion variability observed at both near-infrared and submillimeter wavelengths make the system a unique test-bed, enabling us to capture the moment of the accretion burst and to study the consequences of the outburst on the protostellar disk and envelope.

Ultrasmall transistor-based light sources

DEFF Research Database (Denmark)

With Jensen, Per Baunegaard; Tavares, Luciana; Kjelstrup-Hansen, Jakob

Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip.......Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip....

Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

International Nuclear Information System (INIS)

Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace; Rajan, Siddharth; Volakis, John L.

2016-01-01

A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures

Molecular materials for organic field-effect transistors

International Nuclear Information System (INIS)

Mori, T

2008-01-01

Organic field-effect transistors are important applications of thin films of molecular materials. A variety of materials have been explored for improving the performance of organic transistors. The materials are conventionally classified as p-channel and n-channel, but not only the performance but also even the carrier polarity is greatly dependent on the combinations of organic semiconductors and electrode materials. In this review, particular emphasis is laid on multi-sulfur compounds such as tetrathiafulvalenes and metal dithiolates. These compounds are components of highly conducting materials such as organic superconductors, but are also used in organic transistors. The charge-transfer complexes are used in organic transistors as active layers as well as electrodes. (topical review)

Multiple-channel detection of cellular activities by ion-sensitive transistors

Science.gov (United States)

Machida, Satoru; Shimada, Hideto; Motoyama, Yumi

2018-04-01

An ion-sensitive field-effect transistor to record cellular activities was demonstrated. This field-effect transistor (bio transistor) includes cultured cells on the gate insulator instead of gate electrode. The bio transistor converts a change in potential underneath the cells into variation of the drain current when ion channels open. The bio transistor has high detection sensitivity to even minute variations in potential utilizing a subthreshold swing region. To open ion channels, a reagent solution (acetylcholine) was added to a human-originating cell cultured on the bio transistor. The drain current was successfully decreased with the addition of acetylcholine. Moreover, we attempted to detect the opening of ion channels using a multiple-channel measurement circuit containing several bio transistors. As a consequence, the drain current distinctly decreased only after the addition of acetylcholine. We confirmed that this measurement system including bio transistors enables to observation of cellular activities sensitively and simultaneously.

Phase transition and field effect topological quantum transistor made of monolayer MoS2

Science.gov (United States)

Simchi, H.; Simchi, M.; Fardmanesh, M.; Peeters, F. M.

2018-06-01

We study topological phase transitions and topological quantum field effect transistor in monolayer molybdenum disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q 2) diagonal term in the Hamiltonian, we show that the phase diagram includes quantum anomalous Hall effect, quantum spin Hall effect, and spin quantum anomalous Hall effect regions such that the topological Kirchhoff law is satisfied in the plane. By considering the q 2 diagonal term and including one valley, it is shown that MoS2 has a non-trivial topology, and the valley Chern number is non-zero for each spin. We show that the wave function is (is not) localized at the edges when the q 2 diagonal term is added (deleted) to (from) the spin-valley Dirac mass equation. We calculate the quantum conductance of zigzag MoS2 nanoribbons by using the nonequilibrium Green function method and show how this device works as a field effect topological quantum transistor.

Photon-gated spin transistor

OpenAIRE

Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

2017-01-01

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

Organic Thin-Film Transistor (OTFT-Based Sensors

Directory of Open Access Journals (Sweden)

Daniel Elkington

2014-04-01

Full Text Available Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

Doped organic transistors operating in the inversion and depletion regime

Science.gov (United States)

Lüssem, Björn; Tietze, Max L.; Kleemann, Hans; Hoßbach, Christoph; Bartha, Johann W.; Zakhidov, Alexander; Leo, Karl

2013-01-01

The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters—in particular, the threshold voltage and the ON/OFF ratio—can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer. PMID:24225722

Implementation of Self-Bias Transistor on Voting Logic

International Nuclear Information System (INIS)

Harzawardi Hasim; Syirrazie Che Soh

2014-01-01

Study in the eld of digital integrated circuit (IC) already become common to the modern industrial. Day by day we have been introduced with new gadget that was developed based on transistor. This paper will study the implementation of self-bias transistor on voting logic. The self-bias transistor will connected both on pull-up network and pull-down network. On previous research, study on comparison of total number of transistors, time propagation delay, and frequency between NAND and NOR gate of voting logic. It's show, with the same number of transistor, NAND gate achieve high frequency and low time propagation delay compare to NOR gate. We extend this analysis by comparing the total number of transistor, time propagation delay, frequency and power dissipation between common NAND gate with self-bias NAND gate. Extensive LTSpice simulations were performed using IBM 90 nm CMOS(Complementary Metal Oxide Semiconductor) process technology. The result show self-bias voting NAND gate consumes 54 % less power dissipation, 43% slow frequency and 43 % high time propagation delay compare to common voting NAND gate. (author)

SUBMILLIMETER H{sub 2}O MEGAMASERS IN NGC 4945 AND THE CIRCINUS GALAXY

Energy Technology Data Exchange (ETDEWEB)

Pesce, D. W. [Department of Astronomy, University of Virginia, 530 McCormick Road, Charlottesville, VA 22904 (United States); Braatz, J. A.; Impellizzeri, C. M. V., E-mail: dpesce@virginia.edu [National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903 (United States)

2016-08-10

We present 321 GHz observations of five active galactic nuclei (AGNs) from ALMA Cycle 0 archival data: NGC 5793, NGC 1068, NGC 1386, NGC 4945, and the Circinus galaxy. Submillimeter maser emission is detected for the first time toward NGC 4945, and we present a new analysis of the submillimeter maser system in Circinus. None of the other three galaxies show maser emission, although we have detected and imaged the continuum from every galaxy. Both NGC 4945 and Circinus are known to host strong (≳10 Jy) 22 GHz megamaser emission, and VLBI observations have shown that the masers reside in the innermost ∼1 pc of the galaxies. The peak flux densities of the 321 GHz masers in both systems are substantially weaker (by a factor of ∼100) than what is observed at 22 GHz, although the corresponding isotropic luminosities are more closely matched (within a factor of ∼10) between the two transitions. We compare the submillimeter spectra presented here to the known 22 GHz spectra in both galaxies, and we argue that while both transitions originate from the gaseous environment near the AGNs, not all sites are in common. In Circinus, the spectral structure of the 321 GHz masers indicates that they may trace the accretion disk at radii interior to the 22 GHz masers. The continuum emission in NGC 4945 and NGC 5793 shows a spatial distribution indicative of an origin in the galactic disks (likely thermal dust emission), while for the other three galaxies the emission is centrally concentrated and likely originates from the nucleus.

CMOS-based carbon nanotube pass-transistor logic integrated circuits

Science.gov (United States)

Ding, Li; Zhang, Zhiyong; Liang, Shibo; Pei, Tian; Wang, Sheng; Li, Yan; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao

2012-01-01

Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration. PMID:22334080

Efficient simulation of power MOS transistors

NARCIS (Netherlands)

Ugryumova, M.; Schilders, W.H.A.

2011-01-01

In this report we present a few industrial problems related to modeling of MOS transistors. We suggest an efficient algorithm for computing output current at the top ports of power MOS transistors for given voltage excitations. The suggested algorithm exploits the connection between the resistor and

Thermal transistor utilizing gas-liquid transition

KAUST Repository

Komatsu, Teruhisa S.

2011-01-25

We propose a simple thermal transistor, a device to control heat current. In order to effectively change the current, we utilize the gas-liquid transition of the heat-conducting medium (fluid) because the gas region can act as a good thermal insulator. The three terminals of the transistor are located at both ends and the center of the system, and are put into contact with distinct heat baths. The key idea is a special arrangement of the three terminals. The temperature at one end (the gate temperature) is used as an input signal to control the heat current between the center (source, hot) and another end (drain, cold). Simulating the nanoscale systems of this transistor, control of heat current is demonstrated. The heat current is effectively cut off when the gate temperature is cold and it flows normally when it is hot. By using an extended version of this transistor, we also simulate a primitive application for an inverter. © 2011 American Physical Society.

Water-gel for gating graphene transistors.

Science.gov (United States)

Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

2014-05-14

Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

Transistor reset preamplifier for high-rate high-resolution spectroscopy

International Nuclear Information System (INIS)

Landis, D.A.; Cork, C.P.; Madden, N.W.; Goulding, F.S.

1981-10-01

Pulsed transistor reset of high resolution charge sensitive preamplifiers used in cooled semiconductor spectrometers can sometimes have an advantage over pulsed light reset systems. Several versions of transistor reset spectrometers using both silicon and germanium detectors have been built. This paper discusses the advantages of the transistor reset system and illustrates several configurations of the packages used for the FET and reset transistor. It also describes the preamplifer circuit and shows the performance of the spectrometer at high rates

Model-based cartilage thickness measurement in the submillimeter range

International Nuclear Information System (INIS)

Streekstra, G. J.; Strackee, S. D.; Maas, M.; Wee, R. ter; Venema, H. W.

2007-01-01

Current methods of image-based thickness measurement in thin sheet structures utilize second derivative zero crossings to locate the layer boundaries. It is generally acknowledged that the nonzero width of the point spread function (PSF) limits the accuracy of this measurement procedure. We propose a model-based method that strongly reduces PSF-induced bias by incorporating the PSF into the thickness estimation method. We estimated the bias in thickness measurements in simulated thin sheet images as obtained from second derivative zero crossings. To gain insight into the range of sheet thickness where our method is expected to yield improved results, sheet thickness was varied between 0.15 and 1.2 mm with an assumed PSF as present in the high-resolution modes of current computed tomography (CT) scanners [full width at half maximum (FWHM) 0.5-0.8 mm]. Our model-based method was evaluated in practice by measuring layer thickness from CT images of a phantom mimicking two parallel cartilage layers in an arthrography procedure. CT arthrography images of cadaver wrists were also evaluated, and thickness estimates were compared to those obtained from high-resolution anatomical sections that served as a reference. The thickness estimates from the simulated images reveal that the method based on second derivative zero crossings shows considerable bias for layers in the submillimeter range. This bias is negligible for sheet thickness larger than 1 mm, where the size of the sheet is more than twice the FWHM of the PSF but can be as large as 0.2 mm for a 0.5 mm sheet. The results of the phantom experiments show that the bias is effectively reduced by our method. The deviations from the true thickness, due to random fluctuations induced by quantum noise in the CT images, are of the order of 3% for a standard wrist imaging protocol. In the wrist the submillimeter thickness estimates from the CT arthrography images correspond within 10% to those estimated from the anatomical

EXCITATION CONDITIONS IN THE MULTI-COMPONENT SUBMILLIMETER GALAXY SMM J00266+1708

International Nuclear Information System (INIS)

Sharon, Chelsea E.; Baker, Andrew J.; Harris, Andrew I.; Tacconi, Linda J.; Lutz, Dieter; Longmore, Steven N.

2015-01-01

We present multiline CO observations of the complex submillimeter galaxy SMM J00266+1708. Using the Zpectrometer on the Green Bank Telescope, we provide the first precise spectroscopic measurement of its redshift (z = 2.742). Based on followup CO(1-0), CO(3-2), and CO(5-4) mapping, SMM J00266+1708 appears to have two distinct components separated by ∼500 km s –1 that are nearly coincident along our line of sight. The two components show hints of different kinematics, with the blueshifted component dispersion-dominated and the redshifted component showing a clear velocity gradient. CO line ratios differ slightly between the two components, indicating that the physical conditions in their molecular gas may not be alike. We tentatively infer that SMM J00266+1708 is an ongoing merger with a mass ratio of (7.8 ± 4.0)/sin 2 (i), with its overall size and surface brightness closely resembling that of other merging systems. We perform large velocity gradient modeling of the CO emission from both components and find that each component's properties are consistent with a single phase of molecular gas (i.e., a single temperatures and density); additional multi-phase modeling of the redshifted component, although motivated by a CO(1-0) size larger than the CO(3-2) size, is inconclusive. SMM J00266+1708 provides evidence of early stage mergers within the submillimeter galaxy population. Continuum observations of J00266 at the ∼1'' resolution of our observations could not have distinguished between the two components due to their separation (0.''73 ± 0.''06), illustrating that the additional velocity information provided by spectral line studies is important for addressing the prevalence of unresolved galaxy pairs in low-resolution submillimeter surveys

EXCITATION CONDITIONS IN THE MULTI-COMPONENT SUBMILLIMETER GALAXY SMM J00266+1708

Energy Technology Data Exchange (ETDEWEB)

Sharon, Chelsea E.; Baker, Andrew J. [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, NJ 08854-8019 (United States); Harris, Andrew I. [Department of Astronomy, University of Maryland, College Park, MD 20742 (United States); Tacconi, Linda J.; Lutz, Dieter [Max-Planck-Institut für extraterrestrische Physik (MPE), Giessenbachstr. 1, D-85748 Garching (Germany); Longmore, Steven N. [Astrophysics Research Institute, Liverpool John Moores University, Twelve Quays House, Egerton Warf, Birkenhead CH41 1LD (United Kingdom)

2015-01-10

We present multiline CO observations of the complex submillimeter galaxy SMM J00266+1708. Using the Zpectrometer on the Green Bank Telescope, we provide the first precise spectroscopic measurement of its redshift (z = 2.742). Based on followup CO(1-0), CO(3-2), and CO(5-4) mapping, SMM J00266+1708 appears to have two distinct components separated by ∼500 km s{sup –1} that are nearly coincident along our line of sight. The two components show hints of different kinematics, with the blueshifted component dispersion-dominated and the redshifted component showing a clear velocity gradient. CO line ratios differ slightly between the two components, indicating that the physical conditions in their molecular gas may not be alike. We tentatively infer that SMM J00266+1708 is an ongoing merger with a mass ratio of (7.8 ± 4.0)/sin {sup 2}(i), with its overall size and surface brightness closely resembling that of other merging systems. We perform large velocity gradient modeling of the CO emission from both components and find that each component's properties are consistent with a single phase of molecular gas (i.e., a single temperatures and density); additional multi-phase modeling of the redshifted component, although motivated by a CO(1-0) size larger than the CO(3-2) size, is inconclusive. SMM J00266+1708 provides evidence of early stage mergers within the submillimeter galaxy population. Continuum observations of J00266 at the ∼1'' resolution of our observations could not have distinguished between the two components due to their separation (0.''73 ± 0.''06), illustrating that the additional velocity information provided by spectral line studies is important for addressing the prevalence of unresolved galaxy pairs in low-resolution submillimeter surveys.

Protonic transistors from thin reflecting films

Energy Technology Data Exchange (ETDEWEB)

Ordinario, David D.; Phan, Long; Jocson, Jonah-Micah [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Nguyen, Tam [Department of Chemistry, University of California, Irvine, California 92697 (United States); Gorodetsky, Alon A., E-mail: alon.gorodetsky@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Chemistry, University of California, Irvine, California 92697 (United States)

2015-01-01

Ionic transistors from organic and biological materials hold great promise for bioelectronics applications. Thus, much research effort has focused on optimizing the performance of these devices. Herein, we experimentally validate a straightforward strategy for enhancing the high to low current ratios of protein-based protonic transistors. Upon reducing the thickness of the transistors’ active layers, we increase their high to low current ratios 2-fold while leaving the other figures of merit unchanged. The measured ratio of 3.3 is comparable to the best values found for analogous devices. These findings underscore the importance of the active layer geometry for optimum protonic transistor functionality.

The Overdense Environments of WISE-Selected, Ultra-Luminous, High-Redshift AGN in the Submillimeter

Energy Technology Data Exchange (ETDEWEB)

Jones, Suzy F., E-mail: suzy.jones@chalmers.se [Department of Space, Earth, and Environment, Chalmers University of Technology, Onsala Space Observatory, Onsala (Sweden)

2017-11-21

The environments around WISE-selected hot dust obscured galaxies (Hot DOGs) and WISE/radio-selected active galactic nuclei (AGNs) at average redshifts of z = 2.7 and z = 1.7, respectively, were found to have overdensities of companion Submillimeter-selected sources. The overdensities were of ~2–3 and ~5–6, respectively, compared with blank field submm surveys. The space densities in both samples were found to be overdense compared to normal star-forming galaxies and Submillimeter galaxies (SMGs). All of the companion sources have consistent mid-IR colors and mid-IR to submm ratios to SMGs. Monte Carlo simulations show no angular correlation, which could indicate protoclusters on scales larger than the SCUBA-2 1.5 arcmin scale maps. WISE-selected AGNs appear to be good indicators of overdense areas of active galaxies at high redshift.

Stratospheric isotopic water profiles from a single submillimeter limb scan by TELIS

Directory of Open Access Journals (Sweden)

A. de Lange

2009-08-01

Full Text Available Around 490 GHz relatively strong HDO and H₂¹⁸O emission lines can be found in the submillimeter thermal-emission spectrum of the Earth's atmosphere, along with lines of the principal isotopologue of water vapour. These can be used for remote sensing of the rare/principal isotope ratio in the stratosphere. A sensitivity study has been performed for retrieval simulations of water isotopologues from balloon-borne measurements by the limb sounder TELIS (TErahertz and submillimeter LImb Sounder. The study demonstrates the capability of TELIS to determine, from a single limb scan, the profiles for H₂¹⁸O and HDO between 20 km and 37 km with a retrieval error of ≈3 and a spatial resolution of 1.5 km, as determined by the width of the averaging kernel. In addition HDO can be retrieved in the range of 10–20 km, albeit with a strongly deteriorated retrieval error. Expected uncertainties in instrumental parameters have only limited impact on the retrieval results.

High mobility and quantum well transistors design and TCAD simulation

CERN Document Server

Hellings, Geert

2013-01-01

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas

Science.gov (United States)

Helal, Yaser H.

Plasmas used for manufacturing processes of semiconductor devices are complex and challenging to characterize. The development and improvement of plasma processes and models rely on feedback from experimental measurements. Current diagnostic methods are not capable of measuring absolute densities of plasma species with high resolution without altering the plasma, or without input from other measurements. At pressures below 100 mTorr, spectroscopic measurements of rotational transitions in the submillimeter/terahertz (SMM) spectral region are narrow enough in relation to the sparsity of spectral lines that absolute specificity of measurement is possible. The frequency resolution of SMM sources is such that spectral absorption features can be fully resolved. Processing plasmas are a similar pressure and temperature to the environment used to study astrophysical species in the SMM spectral region. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied in the laboratory and their absorption spectra have been cataloged or are in the literature for the purpose of astrophysical study. Recent developments in SMM devices have made its technology commercially available for applications outside of specialized laboratories. The methods developed over several decades in the SMM spectral region for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500 - 750 GHz radiation through a commercial inductively coupled plasma

Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.

Science.gov (United States)

Miao, Jinshui; Zhang, Suoming; Cai, Le; Scherr, Martin; Wang, Chuan

2015-09-22

This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By controlling the evaporation angle, the channel length of the transistors can be reproducibly controlled to be anywhere between 20 and 70 nm. The as-fabricated 20 nm top-gated BP transistors exhibit respectable on-state current (174 μA/μm) and transconductance (70 μS/μm) at a VDS of 0.1 V. Due to the use of two-dimensional BP as the channel material, the transistors exhibit relatively small short channel effects, preserving a decent on-off current ratio of 10(2) even at an extremely small channel length of 20 nm. Additionally, unlike the unencapsulated BP devices, which are known to be chemically unstable in ambient conditions, the top-gated BP transistors passivated by the Al2O3 gate dielectric layer remain stable without noticeable degradation in device performance after being stored in ambient conditions for more than 1 week. This work demonstrates the great promise of atomically thin BP for applications in ultimately scaled transistors.

Surveying Low-Mass Star Formation with the Submillimeter Array

Science.gov (United States)

Dunham, Michael

2018-01-01

Large astronomical surveys yield important statistical information that can’t be derived from single-object and small-number surveys. In this talk I will review two recent surveys in low-mass star formation undertaken by the Submillimeter Array (SMA): a millimeter continuum survey of disks surrounding variably accreting young stars, and a complete continuum and molecular line survey of all protostars in the nearby Perseus Molecular Cloud. I will highlight several new insights into the processes by which low-mass stars gain their mass that have resulted from the statistical power of these surveys.

Performance Enhancement of Power Transistors and Radiation effect

International Nuclear Information System (INIS)

Hassn, Th.A.A.

2012-01-01

The main objective of this scientific research is studying the characteristic of bipolar junction transistor device and its performance under radiation fields and temperature effect as a control element in many power circuits. In this work we present the results of experimental measurements and analytical simulation of gamma – radiation effects on the electrical characteristics and operation of power transistor types 2N3773, 2N3055(as complementary silicon power transistor are designed for general-purpose switching and amplifier applications), three samples of each type were irradiated by gamma radiation with doses, 1 K rad, 5 K rad, 10 K rad, 30 K rad, and 10 Mrad, the experimental data are utilized to establish an analytical relation between the total absorbed dose of gamma irradiation and corresponding to effective density of generated charge in the internal structure of transistor, the electrical parameters which can be measured to estimate the generated defects in the power transistor are current gain, collector current and collected emitter leakage current , these changes cause the circuit to case proper functioning. Collector current and transconductance of each device are calibrated as a function of irradiated dose. Also the threshold voltage and transistor gain can be affected and also calibrated as a function of dose. A silicon NPN power transistor type 2N3773 intended for general purpose applications, were used in this work. It was designed for medium current and high power circuits. Performance and characteristic were discusses under temperature and gamma radiation doses. Also the internal junction thermal system of the transistor represented in terms of a junction thermal resistance (Rjth). The thermal resistance changed by ΔRjth, due to the external intended, also due to the gamma doses intended. The final result from the model analysis reveals that the emitter-bias configuration is quite stable by resistance ratio RB/RE. Also the current

A cusp electron gun for millimeter wave gyrodevices

Science.gov (United States)

Donaldson, C. R.; He, W.; Cross, A. W.; Li, F.; Phelps, A. D. R.; Zhang, L.; Ronald, K.; Robertson, C. W.; Whyte, C. G.; Young, A. R.

2010-04-01

The experimental results of a thermionic cusp electron gun, to drive millimeter and submillimeter wave harmonic gyrodevices, are reported in this paper. Using a "smooth" magnetic field reversal formed by two coils this gun generated an annular-shaped, axis-encircling electron beam with 1.5 A current, and an adjustable velocity ratio α of up to 1.56 at a beam voltage of 40 kV. The beam cross-sectional shape and transported beam current were measured by a witness plate technique and Faraday cup, respectively. These measured results were found to be in excellent agreement with the simulated results using the three-dimensional code MAGIC.

Outlook and emerging semiconducting materials for ambipolar transistors.

Science.gov (United States)

Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

2014-02-26

Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

Science.gov (United States)

Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

2016-08-24

Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

Radiation effects on junction field-effect transistors (JFETS), MOSFETs, and bipolar transistors, as related to SSC circuit design

International Nuclear Information System (INIS)

Kennedy, E.J.; Alley, G.T.; Britton, C.L. Jr.; Skubic, P.L.; Gray, B.; Wu, A.

1990-01-01

Some results of radiation effects on selected junction field-effect transistors, MOS field-effect transistors, and bipolar junction transistors are presented. The evaluations include dc parameters, as well as capacitive variations and noise evaluations. The tests are made at the low current and voltage levels (in particular, at currents ≤1 mA) that are essential for the low-power regimes required by SSC circuitry. Detailed noise data are presented both before and after 5-Mrad (gamma) total-dose exposure. SPICE radiation models for three high-frequency bipolar processes are compared for a typical charge-sensitive preamplifier

GaN transistors for efficient power conversion

CERN Document Server

Lidow, Alex; de Rooij, Michael; Reusch, David

2014-01-01

The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

CMOS front ends for millimeter wave wireless communication systems

CERN Document Server

Deferm, Noël

2015-01-01

This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.   Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips.  

Application of the Johnson criteria to graphene transistors

International Nuclear Information System (INIS)

Kelly, M J

2013-01-01

For 60 years, the Johnson criteria have guided the development of materials and the materials choices for field-effect and bipolar transistor technology. Intrinsic graphene is a semi-metal, precluding transistor applications, but only under lateral bias is a gap opened and transistor action possible. This first application of the Johnson criteria to biased graphene suggests that this material will struggle to ever achieve competitive commercial applications. (fast track communication)

Design method for a digitally trimmable MOS transistor structure

DEFF Research Database (Denmark)

Ning, Feng; Bruun, Erik

1996-01-01

A digitally trimmable MOS transistor is a MOS transistor consisting of a drain, a source, and a main gate as well as several subgates. The transconductance of the transistor is tunabledigitally by means of connecting subgates either to the main gate or to the source terminal. In this paper, a sys...

A nanoscale piezoelectric transformer for low-voltage transistors.

Science.gov (United States)

Agarwal, Sapan; Yablonovitch, Eli

2014-11-12

A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

Mu-Spec - A High Performance Ultra-Compact Photon Counting spectrometer for Space Submillimeter Astronomy

Science.gov (United States)

Moseley, H.; Hsieh, W.-T.; Stevenson, T.; Wollack, E.; Brown, A.; Benford, D.; Sadleir; U-Yen, I.; Ehsan, N.; Zmuidzinas, J.;

Status of the USA program on the development of submillimeter lasers to measure ion temperatures

International Nuclear Information System (INIS)

Barnett, C.F.; Hutchinson, D.P.; Vander Sluis, K.; Staats, P.A.

1977-01-01

The concept of ion laser scattering is outlined briefly and the parameters of the required submillimeter laser system are described. The current state of the development of lasers, laser and viewing dumps, and detectors is reviewed

Magnetic Vortex Based Transistor Operations

Science.gov (United States)

Kumar, D.; Barman, S.; Barman, A.

2014-01-01

Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan–out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT). PMID:24531235

Transistor challenges - A DRAM perspective

International Nuclear Information System (INIS)

Faul, Juergen W.; Henke, Dietmar

2005-01-01

Key challenges of the transistor scaling from a DRAM perspective will be reviewed. Both, array transistors as well as DRAM support devices face challenges that differ essentially from high performance logic device scaling. As a major difference, retention time and standby current requirements characterize special boundary conditions in the DRAM device design. Array device scaling is determined by a chip size driven aggressive node scaling. To continue scaling, major innovations need to be introduced into state-of-the-art planar array transistors. Alternatively, non planar device concepts will have to be evaluated. Support device design for DRAMs is driven by today's market demand for increased chip performances at little to no extra cost. Major innovations are required to continue that path. Besides this strive for performance increase, special limitations for 'on pitch' circuits at the array edge will come up due to the aggressive cell size scaling

Status of a Novel 4-Band Submm/mm Camera for the Caltech Submillimeter Observatory

Science.gov (United States)

Noroozian, Omid; Day, P.; Glenn, J.; Golwala, S.; Kumar, S.; LeDuc, H. G.; Mazin, B.; Nguyen, H. T.; Schlaerth, J.; Vaillancourt, J. E.; Vayonakis, A.; Zmuidzinas, J.

2007-12-01

Submillimeter observations are important to the understanding of galaxy formation and evolution. Determination of the spectral energy distribution in the millimeter and submillimeter regimes allows important and powerful diagnostics. To this end, we are undertaking the construction of a 4-band (750, 850, 1100, 1300 microns) 8-arcminute field of view camera for the Caltech Submillimeter Observatory. The focal plane will make use of three novel technologies: photolithographic phased array antennae, on-chip band-pass filters, and microwave kinetic inductance detectors (MKID). The phased array antenna design obviates beam-defining feed horns. On-chip band-pass filters eliminate band-defining metal-mesh filters. Together, the antennae and filters enable each spatial pixel to observe in all four bands simultaneously. MKIDs are highly multiplexable background-limited photon detectors. Readout of the MKID array will be done with software-defined radio (See poster by Max-Moerbeck et al.). This camera will provide an order-of-magnitude larger mapping speed than existing instruments and will be comparable to SCUBA 2 in terms of the detection rate for dusty sources, but complementary to SCUBA 2 in terms of wavelength coverage. We present results from an engineering run with a demonstration array, the baseline design for the science array, and the status of instrument design, construction, and testing. We anticipate the camera will be available at the CSO in 2010. This work has been supported by NASA ROSES APRA grants NNG06GG16G and NNG06GC71G, the NASA JPL Research and Technology Development Program, and the Gordon and Betty Moore Foundation.

Liquid crystals for organic transistors (Conference Presentation)

Science.gov (United States)

Hanna, Jun-ichi; Iino, Hiroaki

2016-09-01

Liquid crystals are a new type of organic semiconductors exhibiting molecular orientation in self-organizing manner, and have high potential for device applications. In fact, various device applications have been proposed so far, including photosensors, solar cells, light emitting diodes, field effect transistors, and so on.. However, device performance in those fabricated with liquid crystals is less than those of devices fabricated with conventional materials in spite of unique features of liquid crystals. Here we discuss how we can utilize the liquid crystallinity in organic transistors and how we can overcome conventional non-liquid crystalline organic transistor materials. Then, we demonstrate high performance organic transistors fabricated with a smectic E liquid crystal of Ph-BTBT-10, which show high mobility of over 10cm2/Vs and high thermal durability of over 200oC in OFETs fabricated with its spin-coated polycrystalline thin films.

Achromatic half-wave plate for submillimeter instruments in cosmic microwave background astronomy: experimental characterization.

Science.gov (United States)

Pisano, Giampaolo; Savini, Giorgio; Ade, Peter A R; Haynes, Vic; Gear, Walter K

2006-09-20

An achromatic half-wave plate (HWP) to be used in millimeter cosmic microwave background (CMB) polarization experiments has been designed, manufactured, and tested. The design is based on the 5-plates Pancharatnam recipe and it works in the frequency range 85-185 GHz. A model has been used to predict the transmission, reflection, absorption, and phase shift as a function of frequency. The HWP has been tested by using coherent radiation from a back-wave oscillator to investigate its modulation efficiency and with incoherent radiation from a polarizing Fourier transform spectrometer (FTS) to explore its frequency behavior. The FTS measurements have been fitted with an optical performance model which is in excellent agreement with the data. A detailed analysis of the data also allows a precise determination of the HWP fast and slow axes in the frequency band of operation. A list of the HWP performance characteristics is reported including estimates of its cross polarization.

Transistor Small Signal Analysis under Radiation Effects

International Nuclear Information System (INIS)

Sharshar, K.A.A.

2004-01-01

A Small signal transistor parameters dedicate the operation of bipolar transistor before and after exposed to gamma radiation (1 Mrad up to 5 Mrads) and electron beam(1 MeV, 25 mA) with the same doses as a radiation sources, the electrical parameters of the device are changed. The circuit Model has been discussed.Parameters, such as internal emitter resistance (re), internal base resistance, internal collector resistance (re), emitter base photocurrent (Ippe) and base collector photocurrent (Ippe). These parameters affect on the operation of the device in its applications, which work as an effective element, such as current gain (hFE≡β)degradation it's and effective parameter in the device operation. Also the leakage currents (IcBO) and (IEBO) are most important parameters, Which increased with radiation doses. Theoretical representation of the change in the equivalent circuit for NPN and PNP bipolar transistor were discussed, the input and output parameters of the two types were discussed due to the change in small signal input resistance of the two types. The emitter resistance(re) were changed by the effect of gamma and electron beam irradiation, which makes a change in the role of matching impedances between transistor stages. Also the transistor stability factors S(Ico), S(VBE) and S(β are detected to indicate the transistor operations after exposed to radiation fields. In low doses the gain stability is modified due to recombination of induced charge generated during device fabrication. Also the load resistance values are connected to compensate the effect

Information processing in patterned magnetic nanostructures with edge spin waves.

Science.gov (United States)

Lara, Antonio; Robledo Moreno, Javier; Guslienko, Konstantin Y; Aliev, Farkhad G

2017-07-17

Low dissipation data processing with spins is one of the promising directions for future information and communication technologies. Despite a significant progress, the available magnonic devices are not broadband yet and have restricted capabilities to redirect spin waves. Here we propose a breakthrough approach to spin wave manipulation in patterned magnetic nanostructures with unmatched characteristics, which exploits a spin wave analogue to edge waves propagating along a water-wall boundary. Using theory, micromagnetic simulations and experiment we investigate spin waves propagating along the edges in magnetic structures, under an in-plane DC magnetic field inclined with respect to the edge. The proposed edge spin waves overcome important challenges faced by previous technologies such as the manipulation of the spin wave propagation direction, and they substantially improve the capability of transmitting information at frequencies exceeding 10 GHz. The concept of the edge spin waves allows to design a broad of logic devices such as splitters, interferometers, or edge spin wave transistors with unprecedented characteristics and a potentially strong impact on information technologies.

Large magnetocurrents in double-barrier tunneling transistors

International Nuclear Information System (INIS)

Lee, J.H.; Jun, K.-I.; Shin, K.-H.; Park, S.Y.; Hong, J.K.; Rhie, K.; Lee, B.C.

2005-01-01

Magnetic tunneling transistors (MTT) with double tunneling barriers are fabricated. The structure of the transistor is AFM/FM/I/FM/I/FM/AFM, and ferromagnetic layers serve as the emitter, base and collector. This double-barrier tunneling transistor (DBTT) has an advantage of controlling the potential between the base and collector, compared to the Schottky-barrier-based base and collector of MTT. We found that the collector current density of DBTT is at least 10 3 times larger than that of conventional MTT, since tunneling through AlO x barrier provides much larger current density than that through Schottky barrier

Ambipolar organic tri-gate transistor for low-power complementary electronics

NARCIS (Netherlands)

Torricelli, F.; Ghittorelli, M.; Smits, E.C.P.; Roelofs, C.; Janssen, R.A.J.; Gelinck, G.H.; Kovács-Vajna, Z.M.; Cantatore, E.

2016-01-01

Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics

Stretchable transistors with buckled carbon nanotube films as conducting channels

Science.gov (United States)

Arnold, Michael S; Xu, Feng

2015-03-24

Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

Metal nanoparticle film-based room temperature Coulomb transistor.

Science.gov (United States)

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-07-01

Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.

Low-frequency noise in single electron tunneling transistor

DEFF Research Database (Denmark)

Tavkhelidze, A.N.; Mygind, Jesper

1998-01-01

The noise in current biased aluminium single electron tunneling (SET) transistors has been investigated in the frequency range of 5 mHz ..., we find the same input charge noise, typically QN = 5 × 10–4 e/Hz1/2 at 10 Hz, with and without the HF shielding. At lower frequencies, the noise is due to charge trapping, and the voltage noise pattern superimposed on the V(Vg) curve (voltage across transistor versus gate voltage) strongly depends...... when ramping the junction voltage. Dynamic trapping may limit the high frequency applications of the SET transistor. Also reported on are the effects of rf irradiation and the dependence of the SET transistor noise on bias voltage. ©1998 American Institute of Physics....

Radiation effect of doping and bias conditions on NPN bipolar junction transistors

International Nuclear Information System (INIS)

Xi Shanbin; Wang Yiyuan; Xu Fayue; Zhou Dong; Li Ming; Wang Fei; Wang Zhikuan; Yang Yonghui; Lu Wu

2011-01-01

In this paper,we investigate 60 Co γ-ray irradiation effects and annealing behaviors of NPN bipolar junction transistors of the same manufacturing technology but different doping concentrations. The transistors of different doping concentrations differ in responses of the radiation effect. More degradation was observed with the transistors of low concentration-doped NPN transistors than the high concentration-doped NPN transistors. The results also demonstrate that reverse-biased transistors are more sensitive to radiation than the forward-biased ones. Mechanisms of the radiation responses are analyzed. (authors)

Uniformity of fully gravure printed organic field-effect transistors

International Nuclear Information System (INIS)

Hambsch, M.; Reuter, K.; Stanel, M.; Schmidt, G.; Kempa, H.; Fuegmann, U.; Hahn, U.; Huebler, A.C.

2010-01-01

Fully mass-printed organic field-effect transistors were made completely by means of gravure printing. Therefore a special printing layout was developed in order to avoid register problems in print direction. Upon using this layout, contact pads for source-drain electrodes of the transistors are printed together with the gate electrodes in one and the same printing run. More than 50,000 transistors have been produced and by random tests a yield of approximately 75% has been determined. The principle suitability of the gravure printed transistors for integrated circuits has been shown by the realization of ring oscillators.

Theory and application of dual-transistor charge separation analysis

International Nuclear Information System (INIS)

Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Sexton, F.W.; Shaneyfelt, M.R.

1989-01-01

The authors describe a dual-transistor charge separation method to evaluate the radiation response of MOS transistors. This method requires that n- and p-channel transistors with identically processed oxides be irradiated under identical conditions at the same oxide electric fields. Combining features of single-transistor midgap and mobility methods, the authors show how one may determine threshold voltage shifts due to oxide-trapped and interface-trapped charge from standard threshold voltage and mobility measurements. These measurements can be made at currents 2-5 orders of magnitude higher than those required for midgap, subthreshold slope, and charge-pumping methods. The dual-transistor method contains no adjustable parameters, and includes an internal self-consistency check. The accuracy of the method is verified by comparison to midgap, subthreshold slope, and charge-pumping methods for several MOS processes and technologies

Organic electrochemical transistors

KAUST Repository

Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Ró isí n M.; Berggren, Magnus; Malliaras, George G.

2018-01-01

Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume

SUBMILLIMETER FOLLOW-UP OF WISE-SELECTED HYPERLUMINOUS GALAXIES

Energy Technology Data Exchange (ETDEWEB)

Wu Jingwen; Eisenhardt, Peter R. M.; Stern, Daniel; Assef, Roberto [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109 (United States); Tsai, Chao-Wei; Cutri, Roc; Griffith, Roger; Jarrett, Thomas [Infrared Processing and Analysis Center, California Institute of Technology, Pasadena, CA 91125 (United States); Sayers, Jack; Bridge, Carrie [Division of Physics, Math and Astronomy, California Institute of Technology, Pasadena, CA 91125 (United States); Benford, Dominic [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Blain, Andrew [Department of Physics and Astronomy, University of Leicester, LE1 7RH Leicester (United Kingdom); Petty, Sara; Lake, Sean [Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, CA 90095 (United States); Bussmann, Shane [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, MS78, Cambridge, MA 02138 (United States); Comerford, Julia M.; Evans, Neal J. II [Department of Astronomy, University of Texas, Austin, TX 78731 (United States); Lonsdale, Carol [National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903 (United States); Rho, Jeonghee [SETI Institute, 189 BERNARDO Avenue, Mountain View, CA 94043 (United States); Stanford, S. Adam, E-mail: jingwen.wu@jpl.nasa.gov [Department of Physics, University of California Davis, One Shields Avenue, Davis, CA 95616 (United States); and others

2012-09-01

We have used the Caltech Submillimeter Observatory (CSO) to follow-up a sample of Wide-field Infrared Survey Explorer (WISE) selected, hyperluminous galaxies, the so-called W1W2-dropout galaxies. This is a rare ({approx}1000 all-sky) population of galaxies at high redshift (peaks at z = 2-3), which are faint or undetected by WISE at 3.4 and 4.6 {mu}m, yet are clearly detected at 12 and 22 {mu}m. The optical spectra of most of these galaxies show significant active galactic nucleus activity. We observed 14 high-redshift (z > 1.7) W1W2-dropout galaxies with SHARC-II at 350-850 {mu}m, with nine detections, and observed 18 with Bolocam at 1.1 mm, with five detections. Warm Spitzer follow-up of 25 targets at 3.6 and 4.5 {mu}m, as well as optical spectra of 12 targets, are also presented in the paper. Combining WISE data with observations from warm Spitzer and CSO, we constructed their mid-IR to millimeter spectral energy distributions (SEDs). These SEDs have a consistent shape, showing significantly higher mid-IR to submillimeter ratios than other galaxy templates, suggesting a hotter dust temperature. We estimate their dust temperatures to be 60-120 K using a single-temperature model. Their infrared luminosities are well over 10{sup 13} L{sub Sun }. These SEDs are not well fitted with existing galaxy templates, suggesting they are a new population with very high luminosity and hot dust. They are likely among the most luminous galaxies in the universe. We argue that they are extreme cases of luminous, hot dust-obscured galaxies (DOGs), possibly representing a short evolutionary phase during galaxy merging and evolution. A better understanding of their long-wavelength properties needs ALMA as well as Herschel data.

SUBMILLIMETER FOLLOW-UP OF WISE-SELECTED HYPERLUMINOUS GALAXIES

International Nuclear Information System (INIS)

Wu Jingwen; Eisenhardt, Peter R. M.; Stern, Daniel; Assef, Roberto; Tsai, Chao-Wei; Cutri, Roc; Griffith, Roger; Jarrett, Thomas; Sayers, Jack; Bridge, Carrie; Benford, Dominic; Blain, Andrew; Petty, Sara; Lake, Sean; Bussmann, Shane; Comerford, Julia M.; Evans, Neal J. II; Lonsdale, Carol; Rho, Jeonghee; Stanford, S. Adam

2012-01-01

We have used the Caltech Submillimeter Observatory (CSO) to follow-up a sample of Wide-field Infrared Survey Explorer (WISE) selected, hyperluminous galaxies, the so-called W1W2-dropout galaxies. This is a rare (∼1000 all-sky) population of galaxies at high redshift (peaks at z = 2-3), which are faint or undetected by WISE at 3.4 and 4.6 μm, yet are clearly detected at 12 and 22 μm. The optical spectra of most of these galaxies show significant active galactic nucleus activity. We observed 14 high-redshift (z > 1.7) W1W2-dropout galaxies with SHARC-II at 350-850 μm, with nine detections, and observed 18 with Bolocam at 1.1 mm, with five detections. Warm Spitzer follow-up of 25 targets at 3.6 and 4.5 μm, as well as optical spectra of 12 targets, are also presented in the paper. Combining WISE data with observations from warm Spitzer and CSO, we constructed their mid-IR to millimeter spectral energy distributions (SEDs). These SEDs have a consistent shape, showing significantly higher mid-IR to submillimeter ratios than other galaxy templates, suggesting a hotter dust temperature. We estimate their dust temperatures to be 60-120 K using a single-temperature model. Their infrared luminosities are well over 10 13 L ☉ . These SEDs are not well fitted with existing galaxy templates, suggesting they are a new population with very high luminosity and hot dust. They are likely among the most luminous galaxies in the universe. We argue that they are extreme cases of luminous, hot dust-obscured galaxies (DOGs), possibly representing a short evolutionary phase during galaxy merging and evolution. A better understanding of their long-wavelength properties needs ALMA as well as Herschel data.

Submillimeter Follow-up of Wise-Selected Hyperluminous Galaxies

Science.gov (United States)

Wu, Jingwen; Tsai, Chao-Wei; Sayers, Jack; Benford, Dominic; Bridge, Carrie; Blain, Andrew; Eisenhardt, Peter R. M.; Stern, Daniel; Petty, Sara; Assef, Roberto;

Far-infrared and submillimeter spectroscopy of photodissociation regions

International Nuclear Information System (INIS)

Qaiyum, A.

1993-12-01

The physical properties of the galactic and extragalactic photodissociation regions, warm gas components molecular clouds are, generally, derived through the far-infrared (FIR) fine structure and submillimeter line emissions arising out of these regions. In the theoretical studies of these lines the model of Tielens and Hollenbach (herein after referred as TH) are usually employed in which all the opacity is assumed local in escape probability formalism and inward directed photons do not escape. These assumptions are contrary to the observational facts, where most of the lines are found optically thin except OI (63 μm) and low rotational transitions of CO and some other molecules. The optically thin medium will allow the radiation to escape through any face of the region. These observational evidences let us to assume finite parallel plane slab, instead of semi-infinite parallel slab, in which the photons are allowed to escape from both surfaces (back and front). In the present study an attempt has been made to incorporate the two sided escape of photons from the PDRs and to study its effect on the FIR and submillimeter line emission from the PDRs/molecular clouds. Further the present formalism is also employed to study the clumpy PDRs/molecular clouds. The preliminary results show that now serious consequences are found on the thermal and chemical structure of the regions but individual line emissions are modified by differing factors. Particularly at low density and low kinetic temperature the change is substantial but at density greater than the critical density of the line and temperature close to the excitation temperature its effect is almost negligible. An attempt has also been made to study the physical conditions of the M17 region employing the present formalism. (author). 49 refs, 8 figs, 1 tab

Self-Consistent Study of Conjugated Aromatic Molecular Transistors

International Nuclear Information System (INIS)

Jing, Wang; Yun-Ye, Liang; Hao, Chen; Peng, Wang; Note, R.; Mizuseki, H.; Kawazoe, Y.

2010-01-01

We study the current through conjugated aromatic molecular transistors modulated by a transverse field. The self-consistent calculation is realized with density function theory through the standard quantum chemistry software Gaussian03 and the non-equilibrium Green's function formalism. The calculated I – V curves controlled by the transverse field present the characteristics of different organic molecular transistors, the transverse field effect of which is improved by the substitutions of nitrogen atoms or fluorine atoms. On the other hand, the asymmetry of molecular configurations to the axis connecting two sulfur atoms is in favor of realizing the transverse field modulation. Suitably designed conjugated aromatic molecular transistors possess different I – V characteristics, some of them are similar to those of metal-oxide-semiconductor field-effect transistors (MOSFET). Some of the calculated molecular devices may work as elements in graphene electronics. Our results present the richness and flexibility of molecular transistors, which describe the colorful prospect of next generation devices. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

The Smallest Transistor-Based Nonautonomous Chaotic Circuit

DEFF Research Database (Denmark)

Lindberg, Erik; Murali, K.; Tamasevicius, Arunas

2005-01-01

A nonautonomous chaotic circuit based on one transistor, two capacitors, and two resistors is described. The mechanism behind the chaotic performance is based on “disturbance of integration.” The forward part and the reverse part of the bipolar transistor are “fighting” about the charging...

Micro combustion in sub-millimeter channels for novel modular thermophotovoltaic power generators

International Nuclear Information System (INIS)

Pan, J F; Tang, A K; Duan, L; Li, X C; Yang, W M; Chou, S K; Xue, H

2010-01-01

The performance of micro combustion-driven power systems is strongly influenced by the combustor structure. A novel modular thermophotovoltaic (TPV) power generator is presented, which is based on the sub-millimeter parallel plate combustor. It has the potential to achieve a high power density because of the high radiation energy per unit volume due to the high surface-to-volume ratio of the micro-combustor. The work experimentally investigated the ignition limitation for two micro-combustors. It also studied the effects of three major parameters on a sub-millimeter combustor, namely hydrogen to oxygen mixing ratio, hydrogen volumetric flow rate and nozzle geometry. The results show that the combustion efficiency decreases with the increase of the hydrogen flow rate, which is caused by reduced residence time. The average wall temperature with the rectangular nozzle is 25 K higher than that with the circle nozzle. The output electrical power and power density of the modular TPV power generator are projected to be 0.175 W and 0.0722 W cm −3 respectively. We experimentally achieve 0.166 W of electrical power, which is in good agreement with the model prediction

COMPACT STARBURSTS IN z similar to 3-6 SUBMILLIMETER GALAXIES REVEALED BY ALMA

NARCIS (Netherlands)

Ikarashi, Soh; Ivison, R. J.; Caputi, Karina I.; Aretxaga, Itziar; Dunlop, James S.; Hatsukade, Bunyo; Hughes, David H.; Iono, Daisuke; Izumi, Takuma; Kawabe, Ryohei; Kohno, Kotaro; Lagos, Claudia D. P.; Motohara, Kentaro; Nakanishi, Kouichiro; Ohta, Kouji; Tamura, Yoichi; Umehata, Hideki; Wilson, Grant W.; Yabe, Kiyoto; Yun, Min S.

2015-01-01

We report the source size distribution, as measured by ALMA millimetric continuum imaging, of a sample of 13 AzTEC-selected submillimeter galaxies (SMGs) at z(phot) similar to 3-6. Their infrared luminosities and star formation rates (SFRs) are L-IR similar to, 2-6 x 10(12) L-circle dot and similar

High mobility polymer gated organic field effect transistor using zinc ...

Indian Academy of Sciences (India)

Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film ... At room temperature, these transistors exhibit p-type conductivity with field-effect ... Keywords. Organic semiconductor; field effect transistor; phthalocyanine; high mobility. ... The evaporation rate was kept at ...

The use of 2N3055 transistor as photosensory in solarymeter

International Nuclear Information System (INIS)

Bintoro; Sastroamidjojo, M.S.A.

1981-01-01

The characteristics of 2N3055 type transistor used for solarymeters sensor. It can be seen that transistor sensor has more response time. The response to against arrival solar intensity is linear. It can be used for solarymeter sensor after calibrated with pyranometer reference, but not so sensitive for 500 nanometer wavelength. It can be concluded that 2N3055 transistor made by Motrola than the made by R.C.A. because the 2N3055 transistor is more wide and more accurate than the R.C.A. transistor. (author tr.)

Improvements in or relating to transistor circuits

International Nuclear Information System (INIS)

Richards, R.F.; Williamson, P.W.

1978-01-01

This invention relates to transistor circuits and in particular to integrated transistor circuits formed on a substrate of semi-conductor material such as silicon. The invention is concerned with providing integrated circuits in which malfunctions caused by the effects of ionising, e.g. nuclear, radiations are reduced. (author)

Enhanced transconductance in a double-gate graphene field-effect transistor

Science.gov (United States)

Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

2018-03-01

Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

Modeling of charge transport in ion bipolar junction transistors.

Science.gov (United States)

Volkov, Anton V; Tybrandt, Klas; Berggren, Magnus; Zozoulenko, Igor V

2014-06-17

Spatiotemporal control of the complex chemical microenvironment is of great importance to many fields within life science. One way to facilitate such control is to construct delivery circuits, comprising arrays of dispensing outlets, for ions and charged biomolecules based on ionic transistors. This allows for addressability of ionic signals, which opens up for spatiotemporally controlled delivery in a highly complex manner. One class of ionic transistors, the ion bipolar junction transistors (IBJTs), is especially attractive for these applications because these transistors are functional at physiological conditions and have been employed to modulate the delivery of neurotransmitters to regulate signaling in neuronal cells. Further, the first integrated complementary ionic circuits were recently developed on the basis of these ionic transistors. However, a detailed understanding of the device physics of these transistors is still lacking and hampers further development of components and circuits. Here, we report on the modeling of IBJTs using Poisson's and Nernst-Planck equations and the finite element method. A two-dimensional model of the device is employed that successfully reproduces the main characteristics of the measurement data. On the basis of the detailed concentration and potential profiles provided by the model, the different modes of operation of the transistor are analyzed as well as the transitions between the different modes. The model correctly predicts the measured threshold voltage, which is explained in terms of membrane potentials. All in all, the results provide the basis for a detailed understanding of IBJT operation. This new knowledge is employed to discuss potential improvements of ion bipolar junction transistors in terms of miniaturization and device parameters.

Metal nanoparticle film–based room temperature Coulomb transistor

Science.gov (United States)

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-01-01

Single-electron transistors would represent an approach to developing less power–consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations. PMID:28740864

Large scale electromechanical transistor with application in mass sensing

Energy Technology Data Exchange (ETDEWEB)

Jin, Leisheng; Li, Lijie, E-mail: L.Li@swansea.ac.uk [Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea SA2 8PP (United Kingdom)

2014-12-07

Nanomechanical transistor (NMT) has evolved from the single electron transistor, a device that operates by shuttling electrons with a self-excited central conductor. The unfavoured aspects of the NMT are the complexity of the fabrication process and its signal processing unit, which could potentially be overcome by designing much larger devices. This paper reports a new design of large scale electromechanical transistor (LSEMT), still taking advantage of the principle of shuttling electrons. However, because of the large size, nonlinear electrostatic forces induced by the transistor itself are not sufficient to drive the mechanical member into vibration—an external force has to be used. In this paper, a LSEMT device is modelled, and its new application in mass sensing is postulated using two coupled mechanical cantilevers, with one of them being embedded in the transistor. The sensor is capable of detecting added mass using the eigenstate shifts method by reading the change of electrical current from the transistor, which has much higher sensitivity than conventional eigenfrequency shift approach used in classical cantilever based mass sensors. Numerical simulations are conducted to investigate the performance of the mass sensor.

Black Holes and Sub-millimeter Dimensions

CERN Document Server

Argyres, Philip C; March-Russell, John David; Argyres, Philip C.; Dimopoulos, Savas; March-Russell, John

1998-01-01

Recently, a new framework for solving the hierarchy problem was proposed which does not rely on low energy supersymmetry or technicolor. The fundamental Planck mass is at a TeV and the observed weakness of gravity at long distances is due the existence of new sub-millimeter spatial dimensions. In this letter, we study how the properties of black holes are altered in these theories. Small black holes---with Schwarzschild radii smaller than the size of the new spatial dimensions---are quite different. They are bigger, colder, and longer-lived than a usual $(3+1)$-dimensional black hole of the same mass. Furthermore, they primarily decay into harmless bulk graviton modes rather than standard-model degrees of freedom. We discuss the interplay of our scenario with the holographic principle. Our results also have implications for the bounds on the spectrum of primordial black holes (PBHs) derived from the photo-dissociation of primordial nucleosynthesis products, distortion of the diffuse gamma-ray spectrum, overcl...

Tunneling field effect transistor technology

CERN Document Server

Chan, Mansun

2016-01-01

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

High-Temperature Surface-Acoustic-Wave Transducer

Science.gov (United States)

Zhao, Xiaoliang; Tittmann, Bernhard R.

2010-01-01

Aircraft-engine rotating equipment usually operates at high temperature and stress. Non-invasive inspection of microcracks in those components poses a challenge for the non-destructive evaluation community. A low-profile ultrasonic guided wave sensor can detect cracks in situ. The key feature of the sensor is that it should withstand high temperatures and excite strong surface wave energy to inspect surface/subsurface cracks. As far as the innovators know at the time of this reporting, there is no existing sensor that is mounted to the rotor disks for crack inspection; the most often used technology includes fluorescent penetrant inspection or eddy-current probes for disassembled part inspection. An efficient, high-temperature, low-profile surface acoustic wave transducer design has been identified and tested for nondestructive evaluation of structures or materials. The development is a Sol-Gel bismuth titanate-based surface-acoustic-wave (SAW) sensor that can generate efficient surface acoustic waves for crack inspection. The produced sensor is very thin (submillimeter), and can generate surface waves up to 540 C. Finite element analysis of the SAW transducer design was performed to predict the sensor behavior, and experimental studies confirmed the results. One major uniqueness of the Sol-Gel bismuth titanate SAW sensor is that it is easy to implement to structures of various shapes. With a spray coating process, the sensor can be applied to surfaces of large curvatures. Second, the sensor is very thin (as a coating) and has very minimal effect on airflow or rotating equipment imbalance. Third, it can withstand temperatures up to 530 C, which is very useful for engine applications where high temperature is an issue.

Organic semiconductors for organic field-effect transistors

International Nuclear Information System (INIS)

Yamashita, Yoshiro

2009-01-01

The advantages of organic field-effect transistors (OFETs), such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed. (topical review)

Transistors using crystalline silicon devices on glass

Science.gov (United States)

McCarthy, Anthony M.

1995-01-01

A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

Organic semiconductors for organic field-effect transistors

Directory of Open Access Journals (Sweden)

Yoshiro Yamashita

2009-01-01

Full Text Available The advantages of organic field-effect transistors (OFETs, such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed.

Simulaci??n y modelado de transistores MOS de doble puerta

OpenAIRE

Cartujo Cassinello, Pedro

2000-01-01

En este trabajo se hace un estudio del transistor MOS de doble puerta analizando las posibles ventajas de esta nueva estructura frene al transistor convencional y el transistor MOS SOI de puerta simple. Para ello se ha analizado una secci??n transversal de un transistor MOS de doble puerta de canal N, con el fin de examinar detalladamente las peculiaridades de la distribuci??n de electrones con una amplia variedad de valores de todos los par??mentros tecnol??gicos y condiciones de operaci??n,...

Radiation effect on silicon transistors in mixed neutrons-gamma environment

Science.gov (United States)

Assaf, J.; Shweikani, R.; Ghazi, N.

2014-10-01

The effects of gamma and neutron irradiations on two different types of transistors, Junction Field Effect Transistor (JFET) and Bipolar Junction Transistor (BJT), were investigated. Irradiation was performed using a Syrian research reactor (RR) (Miniature Neutron Source Reactor (MNSR)) and a gamma source (Co-60 cell). For RR irradiation, MCNP code was used to calculate the absorbed dose received by the transistors. The experimental results showed an overall decrease in the gain factors of the transistors after irradiation, and the JFETs were more resistant to the effects of radiation than BJTs. The effect of RR irradiation was also greater than that of gamma source for the same dose, which could be because neutrons could cause more damage than gamma irradiation.

Diffusion pipes at PNP switching transistors

International Nuclear Information System (INIS)

Sachelarie, D.; Postolache, C.; Gaiseanu, F.

1976-01-01

The appearance of the ''diffusion pipes'' greatly affects the fabrication of the PNP high-frequency/very-fast-switching transistors. A brief review of the principal problems connected to the presence of these ''pipes'' is made. A research program is presented which permitted the fabrication of the PNP switching transistors at ICCE-Bucharest, with transition frequency fsub(T) = 1.2 GHz and storage time tsub(s) = 4.5 ns. (author)

Integrated amplifying circuit with MOS transistors

Energy Technology Data Exchange (ETDEWEB)

Baylac, B; Merckel, G; Meunier, P

1974-01-25

The invention relates to a feedback-pass-band amplifier with MOS-transistors. The differential stage of conventional amplifiers is changed into an adding state, whereas the differential amplification stages are changed into amplifier inverter stages. All MOS transistors used in that amplifier are of similar configuration and are interdigitized, whereby the operating speed dispersion is reduced. This can be applied to obtaining a measurement channel for proportional chambers.

Programmable, automated transistor test system

Science.gov (United States)

Truong, L. V.; Sundburg, G. R.

1986-01-01

A programmable, automated transistor test system was built to supply experimental data on new and advanced power semiconductors. The data will be used for analytical models and by engineers in designing space and aircraft electric power systems. A pulsed power technique was used at low duty cycles in a nondestructive test to examine the dynamic switching characteristic curves of power transistors in the 500 to 1000 V, 10 to 100 A range. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software.

Subthreshold currents in CMOS transistors made on oxygen-implanted silicon

International Nuclear Information System (INIS)

Foster, D.J.

1983-01-01

Kinks have been observed in subthreshold current plots of mesa-shaped n-channel transistors made on oxygen-implanted silicon substrates. The kinks represent additional current flow and are due to overlapping fields from the gate electrode causing early corner inversion and to a Qsub(ss) side-wall effect. Subthreshold currents in n-channel transistors are dominated by the two effects which, as a consequence, reduce threshold voltages especially in narrow n-channel transistors. The subthreshold characteristics of p-channel transistors were not affected in the same way. (author)

Status of MUSIC, the MUltiwavelength Sub/millimeter Inductance Camera

Science.gov (United States)

Golwala, Sunil R.; Bockstiegel, Clint; Brugger, Spencer; Czakon, Nicole G.; Day, Peter K.; Downes, Thomas P.; Duan, Ran; Gao, Jiansong; Gill, Amandeep K.; Glenn, Jason; Hollister, Matthew I.; LeDuc, Henry G.; Maloney, Philip R.; Mazin, Benjamin A.; McHugh, Sean G.; Miller, David; Noroozian, Omid; Nguyen, Hien T.; Sayers, Jack; Schlaerth, James A.; Siegel, Seth; Vayonakis, Anastasios K.; Wilson, Philip R.; Zmuidzinas, Jonas

2012-09-01

We present the status of MUSIC, the MUltiwavelength Sub/millimeter Inductance Camera, a new instrument for the Caltech Submillimeter Observatory. MUSIC is designed to have a 14', diffraction-limited field-of-view instrumented with 2304 detectors in 576 spatial pixels and four spectral bands at 0.87, 1.04, 1.33, and 1.98 mm. MUSIC will be used to study dusty star-forming galaxies, galaxy clusters via the Sunyaev-Zeldovich effect, and star formation in our own and nearby galaxies. MUSIC uses broadband superconducting phased-array slot-dipole antennas to form beams, lumpedelement on-chip bandpass filters to define spectral bands, and microwave kinetic inductance detectors to sense incoming light. The focal plane is fabricated in 8 tiles consisting of 72 spatial pixels each. It is coupled to the telescope via an ambient-temperature ellipsoidal mirror and a cold reimaging lens. A cold Lyot stop sits at the image of the primary mirror formed by the ellipsoidal mirror. Dielectric and metal-mesh filters are used to block thermal infrared and out-ofband radiation. The instrument uses a pulse tube cooler and 3He/ 3He/4He closed-cycle cooler to cool the focal plane to below 250 mK. A multilayer shield attenuates Earth's magnetic field. Each focal plane tile is read out by a single pair of coaxes and a HEMT amplifier. The readout system consists of 16 copies of custom-designed ADC/DAC and IF boards coupled to the CASPER ROACH platform. We focus on recent updates on the instrument design and results from the commissioning of the full camera in 2012.

Experimental Observation of Generation of Superradiance Pulses in the Process of Backscattering of Pump Wave on the Intense Electron Bunch

CERN Document Server

Ginzburg, N S; Denisov, G G; Rozental, R M; Sergeev, A; Zotova, I V

2005-01-01

Recently significant progress was archived in the generation of multimegawatt subnanosecond pulses in millimeter wave band utilizing the cyclotron and Cherenkov mechanisms of superradiance (SR) [1,2]. We study the novel mechanism of SR when the powerful pumping wave undergoes the stimulated back scattering on the intense electron bunch. Due to the Doppler up shift the radiation frequency can significantly exceed the frequency of the pumping wave. With the relativistic microwave generator as a pumping wave source such a mechanism can be used for generation of the powerful pulse radiation in the short millimeter and submillimeter wave bands. Experiments on the observation of the stimulated scattering in the superradiance regime were carried out at Institute of Electrophysics RAS with two synchronized accelerators. The 4 ns electron beam from the first accelerator is used for generation of the 38 GHz 100 MW pumping wave which subsequently scattered on the subnanosecond 250 keV 1 kA electron bunch produced by the...

Scalable fabrication of self-aligned graphene transistors and circuits on glass.

Science.gov (United States)

Liao, Lei; Bai, Jingwei; Cheng, Rui; Zhou, Hailong; Liu, Lixin; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2012-06-13

Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/μm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.

Vertically aligned carbon nanotube field-effect transistors

KAUST Repository

Li, Jingqi

2012-10-01

Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.

Transfer-free fabrication of graphene transistors

OpenAIRE

Wessely, P.J.; Wessely, F.; Birinci, E.; Schwalke, U.; Riedinger, B.

2012-01-01

The authors invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon, a catalyst system of nanometer thin aluminum/nickel double layer is used. This catalyst system is structured via liftoff before the wafer enters the catalytic chemical vapor deposition (CCVD) chamber. In the subsequent methane-based growth process, monolayer graphene field-effect transistors and...

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

1998-12-01

Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

Study of performance scaling of 22-nm epitaxial delta-doped channel MOS transistor

Science.gov (United States)

Sengupta, Sarmista; Pandit, Soumya

2015-06-01

Epitaxial delta-doped channel (EδDC) profile is a promising approach for extending the scalability of bulk metal oxide semiconductor (MOS) technology for low-power system-on-chip applications. A comparative study between EδDC bulk MOS transistor with gate length Lg = 22 nm and a conventional uniformly doped channel (UDC) bulk MOS transistor, with respect to various digital and analogue performances, is presented. The study has been performed using Silvaco technology computer-aided design device simulator, calibrated with experimental results. This study reveals that at smaller gate length, EδDC transistor outperforms the UDC transistor with respect to various studied performances. The reduced contribution of the lateral electric field in the channel plays the key role in this regard. Further, the carrier mobility in EδDC transistor is higher compared to UDC transistor. For moderate gate and drain bias, the impact ionisation rate of the carriers for EδDC MOS transistor is lower than that of the UDC transistor. In addition, at 22 nm, the performances of a EδDC transistor are competitive to that of an ultra-thin body silicon-on-insulator transistor.

On the 50th Anniversary of the Transistor

DEFF Research Database (Denmark)

Stassen, Flemming

1997-01-01

This paper celebrates the 50th anniversary of the invention of the bipolar transistor in 1947. Combined with the inventions of integration and planar technology, the invention of the transistor marks the beginning of a period of unprecedented growth, the industrialization of electronics....

Optics for MUSIC: a new (sub)millimeter camera for the Caltech Submillimeter Observatory

Science.gov (United States)

Sayers, Jack; Czakon, Nicole G.; Day, Peter K.; Downes, Thomas P.; Duan, Ran P.; Gao, Jiansong; Glenn, Jason; Golwala, Sunil R.; Hollister, Matt I.; LeDuc, Henry G.; Mazin, Benjamin A.; Maloney, Philip R.; Noroozian, Omid; Nguyen, Hien T.; Schlaerth, James A.; Siegel, Seth; Vaillancourt, John E.; Vayonakis, Anastasios; Wilson, Philip R.; Zmuidzinas, Jonas

2010-07-01

We will present the design and implementation, along with calculations and some measurements of the performance, of the room-temperature and cryogenic optics for MUSIC, a new (sub)millimeter camera we are developing for the Caltech Submm Observatory (CSO). The design consists of two focusing elements in addition to the CSO primary and secondary mirrors: a warm off-axis elliptical mirror and a cryogenic (4K) lens. These optics will provide a 14 arcmin field of view that is diffraction limited in all four of the MUSIC observing bands (2.00, 1.33, 1.02, and 0.86 mm). A cold (4K) Lyot stop will be used to define the primary mirror illumination, which will be maximized while keeping spillover at the sub 1% level. The MUSIC focal plane will be populated with broadband phased antenna arrays that efficiently couple to factor of (see manuscript) 3 in bandwidth,1, 2 and each pixel on the focal plane will be read out via a set of four lumped element filters that define the MUSIC observing bands (i.e., each pixel on the focal plane simultaneously observes in all four bands). Finally, a series of dielectric and metal-mesh low pass filters have been implemented to reduce the optical power load on the MUSIC cryogenic stages to a quasi-negligible level while maintaining good transmission in-band.

Organic electrochemical transistors

Science.gov (United States)

Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Róisín M.; Berggren, Magnus; Malliaras, George G.

2018-02-01

Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

Organic electrochemical transistors

KAUST Repository

Rivnay, Jonathan

2018-01-16

Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

Magnetophoretic transistors in a tri-axial magnetic field.

Science.gov (United States)

Abedini-Nassab, Roozbeh; Joh, Daniel Y; Albarghouthi, Faris; Chilkoti, Ashutosh; Murdoch, David M; Yellen, Benjamin B

2016-10-18

The ability to direct and sort individual biological and non-biological particles into spatially addressable locations is fundamentally important to the emerging field of single cell biology. Towards this goal, we demonstrate a new class of magnetophoretic transistors, which can switch single magnetically labeled cells and magnetic beads between different paths in a microfluidic chamber. Compared with prior work on magnetophoretic transistors driven by a two-dimensional in-plane rotating field, the addition of a vertical magnetic field bias provides significant advantages in preventing the formation of particle clumps and in better replicating the operating principles of circuits in general. However, the three-dimensional driving field requires a complete redesign of the magnetic track geometry and switching electrodes. We have solved this problem by developing several types of transistor geometries which can switch particles between two different tracks by either presenting a local energy barrier or by repelling magnetic objects away from a given track, hereby denoted as "barrier" and "repulsion" transistors, respectively. For both types of transistors, we observe complete switching of magnetic objects with currents of ∼40 mA, which is consistent over a range of particle sizes (8-15 μm). The switching efficiency was also tested at various magnetic field strengths (50-90 Oe) and driving frequencies (0.1-0.6 Hz); however, we again found that the device performance only weakly depended on these parameters. These findings support the use of these novel transistor geometries to form circuit architectures in which cells can be placed in defined locations and retrieved on demand.

Simulation of a spintronic transistor: A study of its performance

International Nuclear Information System (INIS)

Pela, R.R.; Teles, L.K.

2009-01-01

We study theoretically the magnetic bipolar transistor, and compare its performance with common bipolar transistor. We present not only the simulation results for the characteristic curves, but also other relevant parameters related with its performance, such as: the current amplification factor, the open-loop gain, the hybrid parameters and the cutoff frequency. We noted that the spin-charge coupling introduces new phenomena that enrich the functionality characteristics of the magnetic bipolar transistor. Among other things, it has an adjustable band structure, which may be modified during the device operation; it exhibits the already known spin-voltaic effect. On the other hand, we observed that it is necessary a large g-factor to analyze the influence of the field B over the transistor. Nevertheless, we consider the magnetic bipolar transistor as a promising device for spintronic applications

Electrical pulse burnout of transistors in intense ionizing radiation

International Nuclear Information System (INIS)

Hartman, E.F.; Evans, D.C.

1975-01-01

Tests examining possible synergistic effects of electrical pulses and ionizing radiation on transistors were performed and energy/power thresholds for transistor burnout determined. The effect of ionizing radiation on burnout thresholds was found to be minimal, indicating that electrical pulse testing in the absence of radiation produces burnout-threshold results which are applicable to IEMP studies. The conditions of ionized transistor junctions and radiation induced current surges at semiconductor device terminals are inherent in IEMP studies of electrical circuits

Inexpensive Measuring System for the Characterization of Organic Transistors

Directory of Open Access Journals (Sweden)

Clara Pérez-Fuster

2018-01-01

Full Text Available A measuring module has been specifically designed for the electrical characterization of organic semiconductor devices such as organic field effect transistors (OFETs and organic electrochemical transistors (OECTs according to the IEEE 1620-2008 standard. This device has been tested with OFETs based on 6,13-bis(triisopropylsilylethinylpentacene (TIPS-pentacene. The measuring system has been constructed using a NI-PXIe-1073 chassis with integrated controller and two NI-PXI-4132 programmable high-precision source measure units (SMUs that offer a four-quadrant ± 100 V output, with resolution down to 10 pA. LabVIEW™ has been used to develop the appropriate program. Most of the main OFET parameters included in the IEEE 1620 standard can be measured by means of this device. Although nowadays expensive devices for the characterization of Si-based transistors are available, devices for the characterization of organic transistors are not yet widespread in the market. Fabrication of a specific and flexible module that can be used to characterize this type of transistors would provide a powerful tool to researchers.

Measurement Results of the Caltech Submillimeter Observatory 230 GHz and 460 GHz Balanced Receivers

Science.gov (United States)

Kooi, J. W.; Monje, R. R.; Force, B. L.; Rice, F.; Miller, D.; Phillips, T. G.

2010-03-01

The Caltech Submillimeter observatory (CSO) is located on top of Mauna Kea, Hawaii, at an altitude of 4.2km. The existing suite of heterodyne receivers covering the submillimeter band is rapidly aging, and in need of replacement. To this extend we have developed a family of balanced receivers covering the astrophysical important 180-720 GHz atmospheric windows. For the CSO, wide IF bandwidth receivers are implemented in a balanced receiver configuration with dual frequency observation capability. This arrangement was opted to be an optimal compromise between scientific merit and finite funding. In principle, the balanced receiver configuration has the advantage that common mode amplitude noise in the LO system is canceled, while at the same time utilizing all available LO power. Both of these features facilitate the use of commercially available synthesized LO system. In combination with a 4 GHz IF bandwidth, the described receiver layout allows for rapid high resolution spectral line surveys. Dual frequency observation is another important mode of operation offered by the new facility instrumentation. Two band observations are accomplished by separating the H and V polarizations of the incoming signal and routing them via folded optics to the appropriate polarization sensitive balanced mixer. Scientifically this observation mode facilitates pointing for the higher receiver band under mediocre weather conditions and a doubling of scientific throughput (2 x 4 GHz) under good weather conditions. Not only do these changes greatly enhance the spectroscopic capabilities of the CSO, they also enable the observatory to be integrated into the Harvard-Smithsonian Submillimeter Array (eSMA) as an additional baseline. The upgrade of the 345 GHz/650 GHz dual band balanced receivers is not far behind. All the needed hardware has been procured, and commissioning is expected the summer of 2010. The SIS junctions are capable of a 2-12 GHz bandwidth.

Interpretation of electron beam induced charging of oxide layers in a transistor studied using electron holography

DEFF Research Database (Denmark)

Ubaldi, F; Pozzi, G; Kasama, Takeshi

2010-01-01

Off-axis electron holography has been used to characterize a linear array of transistors, which was prepared for examination in cross-sectional geometry in the transmission electron microscope using focused ion beam milling. In reconstructed phase images, regions of silicon oxide that are located...... into account the mean inner potential of the specimen and the perturbed vacuum reference wave. The simulations suggest that the oxide layers contain a uniform volume density of positive charge and that the elliptical contours result from the combined effect of the electrostatic potential in the specimen...

Single-event burnout of epitaxial bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Kuboyama, Satoshi; Sugimoto, Kenji; Matsuda, Sumio [National Space Development Agency of Japan, Ysukuba, Ibaraki (Japan); Hirao, Toshio

1998-10-01

Single-event burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs including small signal transistors with thinner epitaxial layer were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified. (author)

Total dose effects on the matching properties of deep submicron MOS transistors

International Nuclear Information System (INIS)

Wang Yuxin; Hu Rongbin; Li Ruzhang; Chen Guangbing; Fu Dongbing; Lu Wu

2014-01-01

Based on 0.18 μm MOS transistors, for the first time, the total dose effects on the matching properties of deep submicron MOS transistors are studied. The experimental results show that the total dose radiation magnifies the mismatch among identically designed MOS transistors. In our experiments, as the radiation total dose rises to 200 krad, the threshold voltage and drain current mismatch percentages of NMOS transistors increase from 0.55% and 1.4% before radiation to 17.4% and 13.5% after radiation, respectively. PMOS transistors seem to be resistant to radiation damage. For all the range of radiation total dose, the threshold voltage and drain current mismatch percentages of PMOS transistors keep under 0.5% and 2.72%, respectively. (semiconductor devices)

A Klein-tunneling transistor with ballistic graphene

Energy Technology Data Exchange (ETDEWEB)

Wilmart, Quentin; Fève, Gwendal; Berroir, Jean-Marc; Plaçais, Bernard [Laboratoire Pierre Aigrain, Ecole Normale Supérieure, CNRS (UMR 8551), Université P et M Curie, Université D Diderot, 24, rue Lhomond, 75231 Paris Cedex 05 (France); Berrada, Salim; Hung Nguyen, V; Dollfus, Philippe [Institute of Fundamental Electronics, Univ. Paris-Sud, CNRS, Orsay (France); Torrin, David [Département de Physique, Ecole Polytechnique, 91128 Palaiseau (France)

2014-06-15

Today, the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistors in the ballistic regime give access to Klein tunneling physics and allow the realization of devices exploiting the optics-like behavior of Dirac Fermions (DFs) as in the Veselago lens or the Fabry–Pérot cavity. Here we propose a Klein tunneling transistor based on the geometrical optics of DFs. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using non-equilibrium Green's function (NEGF) simulation. (letter)

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

Science.gov (United States)

Bai, Jingwei; Liao, Lei; Zhou, Hailong; Cheng, Rui; Liu, Lixin; Huang, Yu; Duan, Xiangfeng

2011-06-08

Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 μm to 100 nm show that complete current saturation can be achieved in 5.6 μm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 μS/μm reported in CVD graphene to date.

The excess flux in the cosmic submillimeter background radiation and the primordial deuterium abundance

International Nuclear Information System (INIS)

Dermer, C.D.; Guessoum, N.; National Aeronautics and Space Administration, Greenbelt, MD

1989-01-01

Recent measurements of the cosmic background radiation (CBR) show an enhanced flux in the submillimeter regime, compared to the spectrum of a 2.7 K blackbody. Thermal Comptonization of the relic radiation by a hot nonrelativistic plasma has long been known to produce distortions in the CBR spectrum, similar to what has now been observed. Heating of the primeval plasma to temperatures T ∼ 10 6 - 10 8 K could result from the injection of subcosmic ray protons at epoch z ∼ 10--100. The intensity of the subcosmic ray flux that provide conditions needed to explain the submillimeter excess by thermal Comptonization also leads to the production of cosmologically significant amounts of deuterium in collisions between subcosmic ray protons and primordial protons and α-particles. However, the amount of lithium produced through α-α reactions is in conflict with the observed Li abundance. If lithium is depleted, for example, by processing through Population II stars, arguments for the baryon content of the universe based on primordial deuterium and He abundances are weakened. 12 refs., 1 fig., 1 tab

Outlook and Emerging Semiconducting Materials for Ambipolar Transistors

NARCIS (Netherlands)

Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great

Ambipolar charge transport in organic field-effect transistors

NARCIS (Netherlands)

Smits, E.C.P.; Anthopoulos, T.D.; Setayesh, S.; Veenendaal, van E.; Coehoorn, R.; Blom, P.W.M.; Boer, de B.; Leeuw, de D.M.

2006-01-01

A model describing charge transport in disordered ambipolar organic field-effect transistors is presented. The basis of this model is the variable-range hopping in an exponential density of states developed for disordered unipolar organic transistors. We show that the model can be used to calculate

Microwave and Millimeter-Wave Signal Power Generation

DEFF Research Database (Denmark)

Hadziabdic, Dzenan

Among the major limitations in high-speed communications and highresolution radars is the lack of efficient and powerful signal sources with low distortion. Microwave and millimeter-wave (mm-wave) signal power is needed for signal transmission. Progress in signal generation stems largely from...... distortion and high PAE were observed. The estimated output power of 42.5 dBm and PAE of 31.3% are comparable to the state-of-the-art results reported for GaN HEMT amplifiers. Wireless communication systems planned in the near future will operate at E-band, around 71-86 GHz, and require mm-wave-PAs to boost...... the application of novel materials like galliumnitride (GaN) and silicon-carbide (SiC) and fabrication of indiumphosphide (InP) based transistors. One goal of this thesis is to assess GaN HEMT technology with respect to linear efficient signal power generation. While most reports on GaN HEMT high-power devices...

Development of a submillimeter free electron laser using a compact electro-static accelerator

International Nuclear Information System (INIS)

Kawamura, Y.; Shu, S.H.; Tanabe, T.; Li, D.J.; Toyoda, K.

1995-01-01

An experimental facilities for the studies on submillimeter wavelength free electron laser (FEL) are now under construction in our group. In this paper the possibilities for the two kinds of operation modes, which are expected to be obtained, such as the self mode-locked operations in a small net-gain region and the evolution of CW radiation in a large net-gain region, are analized. (author)

Generation of a strong core-centering force in a submillimeter compound droplet system

International Nuclear Information System (INIS)

Lee, M.C.; Feng, I.; Elleman, D.D.; Wang, T.G.; Young, A.T.

1981-01-01

By amplitude-modulating the driving voltage of an acoustic levitating apparatus, a strong core-centering force can be generated in a submillimeter compound droplet system suspended by the radiation pressure in a gaseous medium. Depending on the acoustic characteristics of the droplet system, it has been found that the technique can be utilized advantageously in the multiple-layer coating of an inertial-confinement-fusion pellet

Highly Specific and Sensitive Fluorescent Nanoprobes for Image-Guided Resection of Sub-Millimeter Peritoneal Tumors.

Science.gov (United States)

Colby, Aaron H; Berry, Samantha M; Moran, Ann M; Pasion, Kristine Amber; Liu, Rong; Colson, Yolonda L; Ruiz-Opazo, Nelson; Grinstaff, Mark W; Herrera, Victoria L M

2017-02-28

A current challenge in the treatment of peritoneal carcinomatosis is the inability to detect, visualize, and resect small or microscopic tumors of pancreatic, ovarian, or mesothelial origin. In these diseases, the completeness of primary tumor resection is directly correlated with patient survival, and hence, identifying small sub-millimeter tumors (i.e., disseminated disease) is critical. Thus, new imaging techniques and probes are needed to improve cytoreductive surgery and patient outcomes. Highly fluorescent rhodamine-labeled expansile nanoparticles (HFR-eNPs) are described for use as a visual aid during cytoreductive surgery of pancreatic carcinomatosis. The covalent incorporation of rhodamine into ∼30 nm eNPs increases the fluorescent signal compared to free rhodamine, thereby affording a brighter and more effective probe than would be achieved by a single rhodamine molecule. Using the intraperitoneal route of administration, HFR-eNPs localize to regions of large (∼1 cm), sub-centimeter, and sub-millimeter intraperitoneal tumor in three different animal models, including pancreatic, mesothelioma, and ovarian carcinoma. Tumoral localization of the HFR-eNPs depends on both the material property (i.e., eNP polymer) as well as the surface chemistry (anionic surfactant vs PEGylated noncharged surfactant). In a rat model of pancreatic carcinomatosis, HFR-eNP identification of tumor is validated against gold-standard histopathological analysis to reveal that HFR-eNPs possess high specificity (99%) and sensitivity (92%) for tumors, in particular, sub-centimeter and microscopic sub-millimeter tumors, with an overall accuracy of 95%. Finally, as a proof-of-concept, HFR-eNPs are used to guide the resection of pancreatic tumors in a rat model of peritoneal carcinomatosis.

Low frequency piezoresonance defined dynamic control of terahertz wave propagation

Science.gov (United States)

Dutta, Moumita; Betal, Soutik; Peralta, Xomalin G.; Bhalla, Amar S.; Guo, Ruyan

2016-11-01

Phase modulators are one of the key components of many applications in electromagnetic and opto-electric wave propagations. Phase-shifters play an integral role in communications, imaging and in coherent material excitations. In order to realize the terahertz (THz) electromagnetic spectrum as a fully-functional bandwidth, the development of a family of efficient THz phase modulators is needed. Although there have been quite a few attempts to implement THz phase modulators based on quantum-well structures, liquid crystals, or meta-materials, significantly improved sensitivity and dynamic control for phase modulation, as we believe can be enabled by piezoelectric-resonance devices, is yet to be investigated. In this article we provide an experimental demonstration of phase modulation of THz beam by operating a ferroelectric single crystal LiNbO3 film device at the piezo-resonance. The piezo-resonance, excited by an external a.c. electric field, develops a coupling between electromagnetic and lattice-wave and this coupling governs the wave propagation of the incident THz beam by modulating its phase transfer function. We report the understanding developed in this work can facilitate the design and fabrication of a family of resonance-defined highly sensitive and extremely low energy sub-millimeter wave sensors and modulators.

Wide-band Millimeter and Sub-Millimeter Wave Radiometer Instrument to Measure Tropospheric Water and Cloud ICE

Data.gov (United States)

National Aeronautics and Space Administration — We propose to develop, fabricate and test a new, multi-frequency millimeter and sub-millimeter-wave radiometer instrument to provide critically-needed measurements...

Ultimate response time of high electron mobility transistors

International Nuclear Information System (INIS)

Rudin, Sergey; Rupper, Greg; Shur, Michael

2015-01-01

We present theoretical studies of the response time of the two-dimensional gated electron gas to femtosecond pulses. Our hydrodynamic simulations show that the device response to a short pulse or a step-function signal is either smooth or oscillating time-decay at low and high mobility, μ, values, respectively. At small gate voltage swings, U 0  = U g  − U th , where U g is the gate voltage and U th is the threshold voltage, such that μU 0 /L < v s , where L is the channel length and v s is the effective electron saturation velocity, the decay time in the low mobility samples is on the order of L 2 /(μU 0 ), in agreement with the analytical drift model. However, the decay is preceded by a delay time on the order of L/s, where s is the plasma wave velocity. This delay is the ballistic transport signature in collision-dominated devices, which becomes important during very short time periods. In the high mobility devices, the period of the decaying oscillations is on the order of the plasma wave velocity transit time. Our analysis shows that short channel field effect transistors operating in the plasmonic regime can meet the requirements for applications as terahertz detectors, mixers, delay lines, and phase shifters in ultra high-speed wireless communication circuits

Very High Frequency Two-Port Characterization of Transistors

DEFF Research Database (Denmark)

Hertel, Jens Christian; Nour, Yasser; Jørgensen, Ivan Harald Holger

To properly use transistors in VHF converters, they need to be characterized under similar conditions. This research presents a two-port method, using a network analyzer (NWA) with a S-port setup. The method is a one-shot method, providing fast results of the off-state parasitics of the transistors....

High current transistor pulse generator

International Nuclear Information System (INIS)

Nesterov, V.; Cassel, R.

1991-05-01

A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability. 8 figs

Simulación y modelado de transistores MOS de doble puerta

OpenAIRE

Cartujo Cassinello, Pedro

2013-01-01

En este trabajo se hace un estudio del transistor MOS de doble puerta analizando las posibles ventajas de esta nueva estructura frene al transistor convencional y el transistor MOS SOI de puerta simple. Para ello se ha analizado una sección transversal de un transistor MOS de doble puerta de canal N, con el fin de examinar detalladamente las peculiaridades de la distribución de electrones con una amplia variedad de valores de todos los parámentros tecnológicos y condiciones de operación, y se...

Transport Mechanisms in Organic Thin-Film Transistors

Science.gov (United States)

Fung, A. W. P.

1996-03-01

Recent success in fabricating field-effect transistors with polycrystalline α-sexithiophene (α-6T) has allowed us to study charge transport in this organic semiconductor. The appealing structural property that the oligomer chains are seated almost perpendicular to the substrate provides a model π-conjugated system which we find exhibits band transport at low temperatures. We observe a behavioral transition around 50K which is consistent with the metal-insulator transition in Holstein's small-polaron theory. The fact that we can observe intrinsic behavior means that the ambient-temperature mobility obtained in these transistors is optimal for α-6T. Agreement with the Holstein theory provides us with a prescription for rational design of materials for organic transistor applications. Work done in collaboration with L. Torsi, A. Dodabalapur, L. J. Rothberg and H. E. Katz.

A Klein-tunneling transistor with ballistic graphene

International Nuclear Information System (INIS)

Wilmart, Quentin; Fève, Gwendal; Berroir, Jean-Marc; Plaçais, Bernard; Berrada, Salim; Hung Nguyen, V; Dollfus, Philippe; Torrin, David

2014-01-01

Today, the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistors in the ballistic regime give access to Klein tunneling physics and allow the realization of devices exploiting the optics-like behavior of Dirac Fermions (DFs) as in the Veselago lens or the Fabry–Pérot cavity. Here we propose a Klein tunneling transistor based on the geometrical optics of DFs. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using non-equilibrium Green's function (NEGF) simulation. (letter)

A spiking neuron circuit based on a carbon nanotube transistor

International Nuclear Information System (INIS)

Chen, C-L; Kim, K; Truong, Q; Shen, A; Li, Z; Chen, Y

2012-01-01

A spiking neuron circuit based on a carbon nanotube (CNT) transistor is presented in this paper. The spiking neuron circuit has a crossbar architecture in which the transistor gates are connected to its row electrodes and the transistor sources are connected to its column electrodes. An electrochemical cell is incorporated in the gate of the transistor by sandwiching a hydrogen-doped poly(ethylene glycol)methyl ether (PEG) electrolyte between the CNT channel and the top gate electrode. An input spike applied to the gate triggers a dynamic drift of the hydrogen ions in the PEG electrolyte, resulting in a post-synaptic current (PSC) through the CNT channel. Spikes input into the rows trigger PSCs through multiple CNT transistors, and PSCs cumulate in the columns and integrate into a ‘soma’ circuit to trigger output spikes based on an integrate-and-fire mechanism. The spiking neuron circuit can potentially emulate biological neuron networks and their intelligent functions. (paper)

Discovery of a Lensed Ultrabright Submillimeter Galaxy at z = 2.0439

Science.gov (United States)

Díaz-Sánchez, A.; Iglesias-Groth, S.; Rebolo, R.; Dannerbauer, H.

2017-07-01

We report an ultrabright lensed submillimeter galaxy (SMG) at z = 2.0439, WISE J132934.18+224327.3, identified as a result of a full-sky cross-correlation of the AllWISE and Planck compact source catalogs aimed to search for bright analogs of the SMG SMM J2135, the Cosmic Eyelash. Inspection of archival SCUBA-2 observations of the candidates revealed a source with fluxes ({S}850μ {{m}}=130 mJy) consistent with the Planck measurements. The centroid of the SCUBA-2 source coincides within 1 arcsec with the position of the AllWISE mid-IR source, and, remarkably, with an arc-shaped lensed galaxy in HST images at visible wavelengths. Low-resolution rest-frame UV-optical spectroscopy of this lensed galaxy obtained with 10.4 m GTC reveals the typical absorption lines of a starburst galaxy. Gemini-N near-IR spectroscopy provided a clear detection of {{{H}}}α emission. The lensed source appears to be gravitationally magnified by a massive foreground galaxy cluster lens at z = 0.44 modeling with Lenstool indicates a lensing amplification factor of 11 ± 2. We determine an intrinsic rest-frame 8-1000 μm luminosity, {L}{IR}, of (1.3+/- 0.1)× {10}13 {L}⊙ , and a likely star formation rate (SFR) of ˜ 500{--}2000 {M}⊙ {{yr}}-1. The SED shows a remarkable similarity with the Cosmic Eyelash from optical-mid/IR to submillimeter/radio, albeit at higher fluxes.

Reprogrammable read only variable threshold transistor memory with isolated addressing buffer

Science.gov (United States)

Lodi, Robert J.

1976-01-01

A monolithic integrated circuit, fully decoded memory comprises a rectangular array of variable threshold field effect transistors organized into a plurality of multi-bit words. Binary address inputs to the memory are decoded by a field effect transistor decoder into a plurality of word selection lines each of which activates an address buffer circuit. Each address buffer circuit, in turn, drives a word line of the memory array. In accordance with the word line selected by the decoder the activated buffer circuit directs reading or writing voltages to the transistors comprising the memory words. All of the buffer circuits additionally are connected to a common terminal for clearing all of the memory transistors to a predetermined state by the application to the common terminal of a large magnitude voltage of a predetermined polarity. The address decoder, the buffer and the memory array, as well as control and input/output control and buffer field effect transistor circuits, are fabricated on a common substrate with means provided to isolate the substrate of the address buffer transistors from the remainder of the substrate so that the bulk clearing function of simultaneously placing all of the memory transistors into a predetermined state can be performed.

Tetracene-based organic light-emitting transistors: optoelectronic properties and electron injection mechanism

NARCIS (Netherlands)

Santato, C.; Capelli, R.; Loi, M.A.; Murgia, M.; Cicoira, F.; Roy, Arunesh; Stallinga, P; Zamboni, R.; Rost, C.; Karg, S.F.; Muccini, M.

2004-01-01

Optoelectronic properties of light-emitting field-effect transistors (LETs) fabricated on bottom-contact transistor structures using a tetracene film as charge-transport and light-emitting material are investigated. Electroluminescence generation and transistor current are correlated, and the bias

Deep Submillimeter and Radio Observations in the SSA22 Field. I. Powering Sources and the Lyα Escape Fraction of Lyα Blobs

Science.gov (United States)

Ao, Y.; Matsuda, Y.; Henkel, C.; Iono, D.; Alexander, D. M.; Chapman, S. C.; Geach, J.; Hatsukade, B.; Hayes, M.; Hine, N. K.; Kato, Y.; Kawabe, R.; Kohno, K.; Kubo, M.; Lehnert, M.; Malkan, M.; Menten, K. M.; Nagao, T.; Norris, R. P.; Ouchi, M.; Saito, T.; Tamura, Y.; Taniguchi, Y.; Umehata, H.; Weiss, A.

2017-12-01

We study the heating mechanisms and Lyα escape fractions of 35 Lyα blobs (LABs) at z ≈ 3.1 in the SSA22 field. Dust continuum sources have been identified in 11 of the 35 LABs, all with star formation rates (SFRs) above 100 M ⊙ yr-1. Likely radio counterparts are detected in 9 out of 29 investigated LABs. The detection of submillimeter dust emission is more linked to the physical size of the Lyα emission than to the Lyα luminosities of the LABs. A radio excess in the submillimeter/radio-detected LABs is common, hinting at the presence of active galactic nuclei. Most radio sources without X-ray counterparts are located at the centers of the LABs. However, all X-ray counterparts avoid the central regions. This may be explained by absorption due to exceptionally large column densities along the line-of-sight or by LAB morphologies, which are highly orientation dependent. The median Lyα escape fraction is about 3% among the submillimeter-detected LABs, which is lower than a lower limit of 11% for the submillimeter-undetected LABs. We suspect that the large difference is due to the high dust attenuation supported by the large SFRs, the dense large-scale environment as well as large uncertainties in the extinction corrections required to apply when interpreting optical data.

Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities

International Nuclear Information System (INIS)

But, D. B.; Drexler, C.; Ganichev, S. D.; Sakhno, M. V.; Sizov, F. F.; Dyakonova, N.; Drachenko, O.; Gutin, A.; Knap, W.

2014-01-01

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm 2 was studied for Si metal–oxide–semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation intensity up to the kW/cm 2 range. Nonlinearity followed by saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm 2 . The observed photoresponse nonlinearity is explained by nonlinearity and saturation of the transistor channel current. A theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitative experimental data both in linear and nonlinear regions. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orders of magnitudes of power densities (from ∼0.5 mW/cm 2 to ∼5 kW/cm 2 )

Failure rates for accelerated acceptance testing of silicon transistors

Science.gov (United States)

Toye, C. R.

1968-01-01

Extrapolation tables for the control of silicon transistor product reliability have been compiled. The tables are based on a version of the Arrhenius statistical relation and are intended to be used for low- and medium-power silicon transistors.

Electromechanical field effect transistors based on multilayer phosphorene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Jiang, Z.T., E-mail: jiangzhaotan@hotmail.com; Lv, Z.T.; Zhang, X.D.

2017-06-21

Based on the tight-binding Hamiltonian approach, we demonstrate that the electromechanical field effect transistors (FETs) can be realized by using the multilayer phosphorene nanoribbons (PNRs). The synergistic combination of the electric field and the external strains can establish the on–off switching since the electric field can shift or split the energy band, and the mechanical strains can widen or narrow the band widths. This kind of multilayer PNR FETs, much solider than the monolayer PNR one and more easily biased by different electric fields, has more transport channels consequently leading to the higher on–off current ratio or the higher sensitivity to the electric fields. Meanwhile, the strain-induced band-flattening will be beneficial for improving the flexibility in designing the electromechanical FETs. In addition, such electromechanical FETs can act as strain-controlled FETs or mechanical detectors for detecting the strains, indicating their potential applications in nano- and micro-electromechanical fields. - Highlights: • Electromechanical transistors are designed with multilayer phosphorene nanoribbons. • Electromechanical synergistic effect can establish the on–off switching more flexibly. • Multilayer transistors, solider and more easily biased, has more transport channels. • Electromechanical transistors can act as strain-controlled transistors or mechanical detectors.

T-gate aligned nanotube radio frequency transistors and circuits with superior performance.

Science.gov (United States)

Che, Yuchi; Lin, Yung-Chen; Kim, Pyojae; Zhou, Chongwu

2013-05-28

In this paper, we applied self-aligned T-gate design to aligned carbon nanotube array transistors and achieved an extrinsic current-gain cutoff frequency (ft) of 25 GHz, which is the best on-chip performance for nanotube radio frequency (RF) transistors reported to date. Meanwhile, an intrinsic current-gain cutoff frequency up to 102 GHz is obtained, comparable to the best value reported for nanotube RF transistors. Armed with the excellent extrinsic RF performance, we performed both single-tone and two-tone measurements for aligned nanotube transistors at a frequency up to 8 GHz. Furthermore, we utilized T-gate aligned nanotube transistors to construct mixing and frequency doubling analog circuits operated in gigahertz frequency regime. Our results confirm the great potential of nanotube-based circuit applications and indicate that nanotube transistors are promising building blocks in high-frequency electronics.

AlN/GaN heterostructures for normally-off transistors

Energy Technology Data Exchange (ETDEWEB)

Zhuravlev, K. S., E-mail: zhur@isp.nsc.ru; Malin, T. V.; Mansurov, V. G.; Tereshenko, O. E. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Abgaryan, K. K.; Reviznikov, D. L. [Dorodnicyn Computing Centre of the Russian Academy of Sciences (Russian Federation); Zemlyakov, V. E.; Egorkin, V. I. [National Research University of Electronic Technology (MIET) (Russian Federation); Parnes, Ya. M.; Tikhomirov, V. G. [Joint Stock Company “Svetlana-Electronpribor” (Russian Federation); Prosvirin, I. P. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

2017-03-15

The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

Science.gov (United States)

Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2016-06-15

Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

Controlling the dimensionality of charge transport in organic thin-film transistors

Science.gov (United States)

Laiho, Ari; Herlogsson, Lars; Forchheimer, Robert; Crispin, Xavier; Berggren, Magnus

2011-01-01

Electrolyte-gated organic thin-film transistors (OTFTs) can offer a feasible platform for future flexible, large-area and low-cost electronic applications. These transistors can be divided into two groups on the basis of their operation mechanism: (i) field-effect transistors that switch fast but carry much less current than (ii) the electrochemical transistors which, on the contrary, switch slowly. An attractive approach would be to combine the benefits of the field-effect and the electrochemical transistors into one transistor that would both switch fast and carry high current densities. Here we report the development of a polyelectrolyte-gated OTFT based on conjugated polyelectrolytes, and we demonstrate that the OTFTs can be controllably operated either in the field-effect or the electrochemical regime. Moreover, we show that the extent of electrochemical doping can be restricted to a few monolayers of the conjugated polyelectrolyte film, which allows both high current densities and fast switching speeds at the same time. We propose an operation mechanism based on self-doping of the conjugated polyelectrolyte backbone by its ionic side groups. PMID:21876143

Nanometer size field effect transistors for terahertz detectors

International Nuclear Information System (INIS)

Knap, W; Rumyantsev, S; Coquillat, D; Dyakonova, N; Teppe, F; Vitiello, M S; Tredicucci, A; Blin, S; Shur, M; Nagatsuma, T

2013-01-01

Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation. (paper)

Development and characterization of vertical double-gate MOS field-effect transistors

International Nuclear Information System (INIS)

Trellenkamp, S.

2004-07-01

Planar MOS-field-effect transistors are common devices today used by the computer industry. When their miniaturization reaches its limit, alternate transistor concepts become necessary. In this thesis the development of vertical Double-Gate-MOS-field-effect transistors is presented. These types of transistors have a vertically aligned p-n-p junction (or n-p-n junction, respectively). Consequently, the source-drain current flows perpendicular with respect to the surface of the wafer. A Double-Gate-field-effect transistor is characterized by a very thin channel region framed by two parallel gates. Due to the symmetry of the structure and less bulk volume better gate control and hence better short channel behavior is expected, as well as an improved scaling potential. Nanostructuring of the transistor's active region is very challenging. Approximately 300 nm high and down to 30 nm wide silicon ridges are requisite. They can be realized using hydrogen silsesquioxane (HSQ) as inorganic high resolution resist for electron beam lithography. Structures defined in HSQ are then transferred with high anisotropy and selectivity into silicon using ICP-RIE (reactive ion etching with inductive coupled plasma). 25 nm wide and 330 nm high silicon ridges are achieved. Different transistor layouts are realized. The channel length is defined by epitaxial growth of doped silicon layers before or by ion implantation after nanostructuring, respectively. The transistors show source-drain currents up to 380 μA/μm and transconductances up to 480 μS/μm. Improved short channel behavior for decreasing width of the silicon ridges is demonstrated. (orig.)

Comparison of MOS capacitor and transistor postirradiation response

International Nuclear Information System (INIS)

McWhorter, P.J.; Fleetwood, D.M.; Pastorek, R.A.; Zimmerman, G.T.

1989-01-01

The postirradiation response of MOS capacitors and transistors fabricated on the same chip has been examined as a function of dose and anneal bias. A variety of analysis techniques are used to evaluate the postirradiation response of these structures, including low and high frequency capacitance-voltage techniques, subthreshold current-voltage techniques, and charge pumping. Though there are changes in the postirradiation energy spectrum of ΔD it , no clear evidence of defect transformation is observed on transistors or capacitors under any conditions examined. Postirradiation response at 80 degrees C is found to be similar in the two structures for low levels of damage (100 krad). For both structures, interface-trap densities continue to grow following irradiation under these conditions. In contrast, the postirradiation response of capacitors and transistors can differ qualitatively at higher levels of damage (1 Mrad), with interface-traps increasing postirradiation at 80 degrees C for transistors and annealing for capacitors. These results indicate that capacitor structures may not be suitable for hardness assurance studies that involve elevated temperature irradiations or postirradiation anneals

Switching Characteristics of Ferroelectric Transistor Inverters

Science.gov (United States)

Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

2010-01-01

This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

Effect of initial material on the electrolytic parameters of field-effect transistors

International Nuclear Information System (INIS)

Antonov, A.V.; Sinitsyn, V.N.; Fursov, V.V.

1978-01-01

The effect of initial material parameters upon the main electric characteristics of field transistors at room and optimum (170 deg C) temperatures is studied. For that purpose, the values of parasitic resistances rsub(s), specific resistances rho and steepness S of field transistors, depending on temperature and electrical conditions were measured. The output volt-ampere characteristics of the transistors at room and optimum temperatures are given. An analysis of the results obtained permits to conclude that there is an unambiguous relationship between rho and rsub(s). Impact ionization is shown to occur for field transistors with lower rho at lower drain voltage. When manufacturing field transistors designed for operation at low temperatures, one should remember that a minimum rho may restrict maximum possible steepness. When designing field transistors with optimum noise characteristics, one should variate not only such material parameters as mobility and carrier density, but also select optimum geometry

Retrieval of an ice water path over the ocean from ISMAR and MARSS millimeter and submillimeter brightness temperatures

Science.gov (United States)

Brath, Manfred; Fox, Stuart; Eriksson, Patrick; Chawn Harlow, R.; Burgdorf, Martin; Buehler, Stefan A.

2018-02-01

A neural-network-based retrieval method to determine the snow ice water path (SIWP), liquid water path (LWP), and integrated water vapor (IWV) from millimeter and submillimeter brightness temperatures, measured by using airborne radiometers (ISMAR and MARSS), is presented. The neural networks were trained by using atmospheric profiles from the ICON numerical weather prediction (NWP) model and by radiative transfer simulations using the Atmospheric Radiative Transfer Simulator (ARTS). The basic performance of the retrieval method was analyzed in terms of offset (bias) and the median fractional error (MFE), and the benefit of using submillimeter channels was studied in comparison to pure microwave retrievals. The retrieval is offset-free for SIWP > 0.01 kg m-2, LWP > 0.1 kg m-2, and IWV > 3 kg m-2. The MFE of SIWP decreases from 100 % at SIWP = 0.01 kg m-2 to 20 % at SIWP = 1 kg m-2 and the MFE of LWP from 100 % at LWP = 0.05 kg m-2 to 30 % at LWP = 1 kg m-2. The MFE of IWV for IWV > 3 kg m-2 is 5 to 8 %. The SIWP retrieval strongly benefits from submillimeter channels, which reduce the MFE by a factor of 2, compared to pure microwave retrievals. The IWV and the LWP retrievals also benefit from submillimeter channels, albeit to a lesser degree. The retrieval was applied to ISMAR and MARSS brightness temperatures from FAAM flight B897 on 18 March 2015 of a precipitating frontal system west of the coast of Iceland. Considering the given uncertainties, the retrieval is in reasonable agreement with the SIWP, LWP, and IWV values simulated by the ICON NWP model for that flight. A comparison of the retrieved IWV with IWV from 12 dropsonde measurements shows an offset of 0.5 kg m-2 and an RMS difference of 0.8 kg m-2, showing that the retrieval of IWV is highly effective even under cloudy conditions.

Current-Induced Transistor Sensorics with Electrogenic Cells

Directory of Open Access Journals (Sweden)

Peter Fromherz

2016-04-01

Full Text Available The concepts of transistor recording of electroactive cells are considered, when the response is determined by a current-induced voltage in the electrolyte due to cellular activity. The relationship to traditional transistor recording, with an interface-induced response due to interactions with the open gate oxide, is addressed. For the geometry of a cell-substrate junction, the theory of a planar core-coat conductor is described with a one-compartment approximation. The fast electrical relaxation of the junction and the slow change of ion concentrations are pointed out. On that basis, various recording situations are considered and documented by experiments. For voltage-gated ion channels under voltage clamp, the effects of a changing extracellular ion concentration and the enhancement/depletion of ion conductances in the adherent membrane are addressed. Inhomogeneous ion conductances are crucial for transistor recording of neuronal action potentials. For a propagating action potential, the effects of an axon-substrate junction and the surrounding volume conductor are distinguished. Finally, a receptor-transistor-sensor is described, where the inhomogeneity of a ligand–activated ion conductance is achieved by diffusion of the agonist and inactivation of the conductance. Problems with regard to a development of reliable biosensors are mentioned.

Planar transistors and impatt diodes with ion implantation

International Nuclear Information System (INIS)

Dorendorf, H.; Glawischnig, H.; Grasser, L.; Hammerschmitt, J.

1975-03-01

Low frequency planar npn and pnp transistors have been developed in which the base and emitter have been fabricated using ion implantation of boron and phosphorus by a drive-in diffusion. Electrical parameters of the transistors are comparable with conventionally produced transistors; the noise figure was improved and production tolerances were significantly reduced. Silicon-impatt diodes for the microwave range were also fabricated with implanted pn junctions and tested for their high frequency characteristics. These diodes, made in an improved upside down technology, delivered output power up to 40 mW (burn out power) at 30 GHz. Reverse leakage current and current carrying capability of these diodes were comparable to diffused structures. (orig.) 891 ORU 892 MB [de

Molecular thermal transistor: Dimension analysis and mechanism

Science.gov (United States)

Behnia, S.; Panahinia, R.

2018-04-01

Recently, large challenge has been spent to realize high efficient thermal transistors. Outstanding properties of DNA make it as an excellent nano material in future technologies. In this paper, we introduced a high efficient DNA based thermal transistor. The thermal transistor operates when the system shows an increase in the thermal flux despite of decreasing temperature gradient. This is what called as negative differential thermal resistance (NDTR). Based on multifractal analysis, we could distinguish regions with NDTR state from non-NDTR state. Moreover, Based on dimension spectrum of the system, it is detected that NDTR state is accompanied by ballistic transport regime. The generalized correlation sum (analogous to specific heat) shows that an irregular decrease in the specific heat induces an increase in the mean free path (mfp) of phonons. This leads to the occurrence of NDTR.

A III-V nanowire channel on silicon for high-performance vertical transistors.

Science.gov (United States)

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

p-i-n Homojunction in Organic Light-Emitting Transistors

NARCIS (Netherlands)

Bisri, Satria Zulkarnaen; Takenobu, Taishi; Sawabe, Kosuke; Tsuda, Satoshi; Yomogidao, Yohei; Yamao, Takeshi; Hotta, Shu; Adachi, Chihaya; Iwasa, Yoshihiro

2011-01-01

A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETS) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously

The Atacama Large Millimeter/Submillimeter Array (ALMA) - A Successful Three-Way International Partnership Without a Majority Stakeholder

Science.gov (United States)

Vanden Bout, Paul A.

2013-04-01

The Atacama Millimeter/Submillimeter Array (ALMA) is the largest ground-based astronomical facility built to date. It's size and challenging site required an international effort. This talk presents the partnership structure, management challenges, current status, and examples of early scientific successes.

Micro and nano devices in passive millimetre wave imaging systems

Science.gov (United States)

Appleby, R.

2013-06-01

The impact of micro and nano technology on millimetre wave imaging from the post war years to the present day is reviewed. In the 1950s whisker contacted diodes in mixers and vacuum tubes were used to realise both radiometers and radars but required considerable skill to realise the performance needed. Development of planar semiconductor devices such as Gunn and Schottky diodes revolutionised mixer performance and provided considerable improvement. The next major breakthrough was high frequency transistors based on gallium arsenide which were initially used at intermediate frequencies but later after further development at millimeter wave frequencies. More recently Monolithic Microwave Integrated circuits(MMICs) offer exceptional performance and the opportunity for innovative design in passive imaging systems. In the future the use of micro and nano technology will continue to drive system performance and we can expect to see integration of antennae, millimetre wave and sub millimetre wave circuits and signal processing.

The effect and mechanism of the bipolar junction transistor in different temperature

International Nuclear Information System (INIS)

Wang Dong; Lu Wu; Ren Diyuan; Li Aiwu; Kuang Zhibing

2007-01-01

The annealing-effect of bipolar junction transistor in different temperature is investigated. It is found that the anneal of the bipolar transistor is related to the annealing-temperature, and the annealing-effect of the different type transistor is dissimilar. The possible mechanism is discussed. (authors)

Development and Experimental Evaluation of an Automated Multi-Media Course on Transistors.

Science.gov (United States)

Whitted, J.H., Jr.; And Others

A completely automated multi-media self-study program for teaching a portion of electronic solid-state fundamentals was developed. The subject matter areas included were fundamental theory of transistors, transistor amplifier fundamentals, and simple mathematical analysis of transistors including equivalent circuits, parameters, and characteristic…

Field emission current from a junction field-effect transistor

International Nuclear Information System (INIS)

Monshipouri, Mahta; Abdi, Yaser

2015-01-01

Fabrication of a titanium dioxide/carbon nanotube (TiO 2 /CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO 2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO 2 /CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO 2 /CNT hetero-structure is also investigated, and well modeled

Radio frequency and linearity performance of transistors using high-purity semiconducting carbon nanotubes.

Science.gov (United States)

Wang, Chuan; Badmaev, Alexander; Jooyaie, Alborz; Bao, Mingqiang; Wang, Kang L; Galatsis, Kosmas; Zhou, Chongwu

2011-05-24

This paper reports the radio frequency (RF) and linearity performance of transistors using high-purity semiconducting carbon nanotubes. High-density, uniform semiconducting nanotube networks are deposited at wafer scale using our APTES-assisted nanotube deposition technique, and RF transistors with channel lengths down to 500 nm are fabricated. We report on transistors exhibiting a cutoff frequency (f(t)) of 5 GHz and with maximum oscillation frequency (f(max)) of 1.5 GHz. Besides the cutoff frequency, the other important figure of merit for the RF transistors is the device linearity. For the first time, we report carbon nanotube RF transistor linearity metrics up to 1 GHz. Without the use of active probes to provide the high impedance termination, the measurement bandwidth is therefore not limited, and the linearity measurements can be conducted at the frequencies where the transistors are intended to be operating. We conclude that semiconducting nanotube-based transistors are potentially promising building blocks for highly linear RF electronics and circuit applications.

Lifetime prediction of InGaZnO thin film transistor for the application of display device and BEOL-transistors

Science.gov (United States)

Kim, Sang Min; Cho, Won Ju; Yu, Chong Gun; Park, Jong Tae

2018-04-01

In this work, the lifetime prediction models of amorphous InGaZnO thin film transistors (a-IGZO TFTs) were suggested for the application of display device and BEOL (Back End Of line) transistors with embedded a-IGZO TFTs. Four different types of test devices according to the active layer thickness, source/drain electrode materials and thermal treatments have been used to verify the suggested model. The device lifetimes under high gate bias stress and hot carrier stress were extracted through fittings of the stretched-exponential equation for threshold voltage shifts and the current estimation method for drain current degradations. Our suggested lifetime prediction models could be used in any kinds of structures of a-IGZO TFTs for the application of display device and BEOL transistors. The a-IGZO TFTs with embedded ITO local conducting layer under source/drain is better for BEOL transistor application and a-IGZO TFTs with InGaZnO thin film as source/drain electrodes may be better for the application of display devices. From 1983 to 1985, he was a Researcher at Gold-Star Semiconductor, Inc., Korea, where he worked on the development of SRAM. He joined the Department of Electronics Engineering, University of Incheon, Incheon, Korea, in 1987, where he is a Professor. As a visiting scientist at Massachusetts Institute of Technology, Cambridge, in 1991, he conducted research in hot carrier reliability of CMOS. As a visiting scholar at University of California, Davis, in 2001, he conducted research on the device structure of Nano-scale SOI CMOS. His recent interests are device structure and reliability of Nano-scale CMOS devices, flash memory, and thin film transistors.

Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

Science.gov (United States)

Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2008-11-01

In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

Mesoscopic photon heat transistor

DEFF Research Database (Denmark)

Ojanen, T.; Jauho, Antti-Pekka

2008-01-01

We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir-Wingreen-Landauer-typ......We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir......-Wingreen-Landauer-type of conductance formula, which gives the photonic heat current through an arbitrary circuit element coupled to two dissipative reservoirs at finite temperatures. As an illustration we present an exact solution for the case when the intermediate circuit can be described as an electromagnetic resonator. We discuss...

Submillimeter wave spectroscopy of ethyl isocyanide and its searches in Orion

Science.gov (United States)

Margulès, L.; Tercero, B.; Guillemin, J. C.; Motiyenko, R. A.; Cernicharo, J.

2018-02-01

Context. About 40 cyanide compounds have been detected in the interstellar medium, but only 3 examples of organic isocyanide compounds were observed in this medium. Ethyl isocyanide is one of the best candidates for possible detection. Aim. To date, measurements of rotational spectra are limited to 40 GHz. The extrapolation of the prediction in the millimeter wave domain is inaccurate and does not permit an unambiguous detection. Methods: The rotational spectra were reinvestigated from 0.15 to 1 THz. Using the new prediction, we searched for the compound ethyl isocyanide in Orion KL and Sgr B2. Results: We newly assigned 2906 transitions and fitted these new data with those from previous studies, reaching quantum numbers up to J = 103 and Ka = 30. The asymmetric top Hamiltonian proposed by Watson in the Ir representation was used for the analysis, and both reductions A and S were tested. The search for CH3CH2NC in Sgr B2 (IRAM 30m) and Orion KL (IRAM 30m, ALMA Science Verification) result in a non-detection; upper limits to the column density were derived. Tables S1-S4 are only available at the CDS via anonymous ftp to http://cdsarc.u-strasbg.fr (http://130.79.128.5) or via http://cdsarc.u-strasbg.fr/viz-bin/qcat?J/A+A/610/A44

DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.

Science.gov (United States)

Franklin, Aaron D

2015-08-14

For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices. Copyright © 2015, American Association for the Advancement of Science.

Dual-mode operation of 2D material-base hot electron transistors

KAUST Repository

Lan, Yann-Wen; Jr., Carlos M. Torres,; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R.; Lerner, Mitchell B.; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L.

2016-01-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V-CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (V-CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Dual-mode operation of 2D material-base hot electron transistors

KAUST Repository

Lan, Yann-Wen

2016-09-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V-CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (V-CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Dual-mode operation of 2D material-base hot electron transistors.

Science.gov (United States)

Lan, Yann-Wen; Torres, Carlos M; Zhu, Xiaodan; Qasem, Hussam; Adleman, James R; Lerner, Mitchell B; Tsai, Shin-Hung; Shi, Yumeng; Li, Lain-Jong; Yeh, Wen-Kuan; Wang, Kang L

2016-09-01

Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (VCB transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Parametrization of the radiation induced leakage current increase of NMOS transistors

International Nuclear Information System (INIS)

Backhaus, M.

2017-01-01

The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their drawbacks in terms of logic density and requirement of dedicated libraries. During operation the resulting increase of the supply current is a serious challenge and needs to be considered during the system design. A simple parametrization of the leakage current of NMOS transistors as a function of total ionizing dose is presented. The parametrization uses a transistor transfer characteristics of the parasitic transistor along the shallow trench isolation to describe the leakage current of the nominal transistor. Together with a parametrization of the number of positive charges trapped in the silicon dioxide and number of activated interface traps in the silicon to silicon dioxide interface the leakage current results as a function of the exposure time to ionizing radiation. This function is fitted to data of the leakage current of single transistors as well as to data of the supply current of full ASICs.

Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene

Science.gov (United States)

Heidler, Jonas; Yang, Sheng; Feng, Xinliang; Müllen, Klaus; Asadi, Kamal

2018-06-01

Memories based on graphene that could be mass produced using low-cost methods have not yet received much attention. Here we demonstrate graphene ferroelectric (dual-gate) field effect transistors. The graphene has been obtained using electrochemical exfoliation of graphite. Field-effect transistors are realized using a monolayer of graphene flakes deposited by the Langmuir-Blodgett protocol. Ferroelectric field effect transistor memories are realized using a random ferroelectric copolymer poly(vinylidenefluoride-co-trifluoroethylene) in a top gated geometry. The memory transistors reveal ambipolar behaviour with both electron and hole accumulation channels. We show that the non-ferroelectric bottom gate can be advantageously used to tune the on/off ratio.

Electrothermal Behavior of High-Frequency Silicon-On-Glass Transistors

NARCIS (Netherlands)

Nenadovic, N.

2004-01-01

In this thesis, research is focused on the investigation of electrothermal effects in high-speed silicon transistors. At high current levels the power dissipation in these devices can lead to heating of both the device itself and the adjacent devices. In advanced transistors these effects are

Controlling charge current through a DNA based molecular transistor

Energy Technology Data Exchange (ETDEWEB)

Behnia, S., E-mail: s.behnia@sci.uut.ac.ir; Fathizadeh, S.; Ziaei, J.

2017-01-05

Molecular electronics is complementary to silicon-based electronics and may induce electronic functions which are difficult to obtain with conventional technology. We have considered a DNA based molecular transistor and study its transport properties. The appropriate DNA sequence as a central chain in molecular transistor and the functional interval for applied voltages is obtained. I–V characteristic diagram shows the rectifier behavior as well as the negative differential resistance phenomenon of DNA transistor. We have observed the nearly periodic behavior in the current flowing through DNA. It is reported that there is a critical gate voltage for each applied bias which above it, the electrical current is always positive. - Highlights: • Modeling a DNA based molecular transistor and studying its transport properties. • Choosing the appropriate DNA sequence using the quantum chaos tools. • Choosing the functional interval for voltages via the inverse participation ratio tool. • Detecting the rectifier and negative differential resistance behavior of DNA.

Field emission current from a junction field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

2015-04-15

Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

Transport spectroscopy of coupled donors in silicon nano-transistors

Science.gov (United States)

Moraru, Daniel; Samanta, Arup; Anh, Le The; Mizuno, Takeshi; Mizuta, Hiroshi; Tabe, Michiharu

2014-01-01

The impact of dopant atoms in transistor functionality has significantly changed over the past few decades. In downscaled transistors, discrete dopants with uncontrolled positions and number induce fluctuations in device operation. On the other hand, by gaining access to tunneling through individual dopants, a new type of devices is developed: dopant-atom-based transistors. So far, most studies report transport through dopants randomly located in the channel. However, for practical applications, it is critical to control the location of the donors with simple techniques. Here, we fabricate silicon transistors with selectively nanoscale-doped channels using nano-lithography and thermal-diffusion doping processes. Coupled phosphorus donors form a quantum dot with the ground state split into a number of levels practically equal to the number of coupled donors, when the number of donors is small. Tunneling-transport spectroscopy reveals fine features which can be correlated with the different numbers of donors inside the quantum dot, as also suggested by first-principles simulation results. PMID:25164032

Investigation of Impact of the Gate Circuitry on IGBT Transistor Dynamic Parameters

Directory of Open Access Journals (Sweden)

Vytautas Bleizgys

2011-03-01

Full Text Available The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.Article in Lithuanian

Transistor-based filter for inhibiting load noise from entering a power supply

Science.gov (United States)

Taubman, Matthew S

2013-07-02

A transistor-based filter for inhibiting load noise from entering a power supply is disclosed. The filter includes a first transistor having an emitter coupled to a power supply, a collector coupled to a load, and a base. The filter also includes a first capacitor coupled between the base of the first transistor and a ground terminal. The filter further includes an impedance coupled between the base and a node between the collector and the load, or a second transistor and second capacitor. The impedance can be a resistor or an inductor.

The dual role of multiple-transistor charge sharing collection in single-event transients

International Nuclear Information System (INIS)

Guo Yang; Chen Jian-Jun; He Yi-Bai; Liang Bin; Liu Bi-Wei

2013-01-01

As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal—oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies. (condensed matter: structural, mechanical, and thermal properties)

Transistor analogs of emergent iono-neuronal dynamics.

Science.gov (United States)

Rachmuth, Guy; Poon, Chi-Sang

2008-06-01

Neuromorphic analog metal-oxide-silicon (MOS) transistor circuits promise compact, low-power, and high-speed emulations of iono-neuronal dynamics orders-of-magnitude faster than digital simulation. However, their inherently limited input voltage dynamic range vs power consumption and silicon die area tradeoffs makes them highly sensitive to transistor mismatch due to fabrication inaccuracy, device noise, and other nonidealities. This limitation precludes robust analog very-large-scale-integration (aVLSI) circuits implementation of emergent iono-neuronal dynamics computations beyond simple spiking with limited ion channel dynamics. Here we present versatile neuromorphic analog building-block circuits that afford near-maximum voltage dynamic range operating within the low-power MOS transistor weak-inversion regime which is ideal for aVLSI implementation or implantable biomimetic device applications. The fabricated microchip allowed robust realization of dynamic iono-neuronal computations such as coincidence detection of presynaptic spikes or pre- and postsynaptic activities. As a critical performance benchmark, the high-speed and highly interactive iono-neuronal simulation capability on-chip enabled our prompt discovery of a minimal model of chaotic pacemaker bursting, an emergent iono-neuronal behavior of fundamental biological significance which has hitherto defied experimental testing or computational exploration via conventional digital or analog simulations. These compact and power-efficient transistor analogs of emergent iono-neuronal dynamics open new avenues for next-generation neuromorphic, neuroprosthetic, and brain-machine interface applications.

On the choice of a head element for low-noise bipolar transistor amplifier

International Nuclear Information System (INIS)

Krasnokutskij, R.N.; Kurchaninov, L.L.; Fedyakin, N.N.; Shuvalov, R.S.

1988-01-01

The measurement results of equivalent noise charge (ENC) for KT382 transistor depending on detector capacity, formation duration and collector current are given. It is shown that the measurement results for this transistor in good agreement with calculations according to the noise model, time-consuming ENC measurements can be replaced by preliminary transistor rejection according to the distributed base resistance, current gain and simple calculations. In applications in the field of nuclear electronics the KT382 transistor enables to attain the same noise parameters as NE578, NE021 transistors (Japan) and it can be recommended for using as a head element of amplifiers

Transistor regenerative spectrometer for 14N nuclear quadrupole resonance study

International Nuclear Information System (INIS)

Anferov, V.P.; Mikhal'kov, V.M.

1981-01-01

Improvement of the Robinson transducer for investigations of nuclear quadrupole resonance (NQR) in 14 N is described. Amplifier of the suggested transducer is made using p-n field effect transistor and small-noise SHF bipolar transistor. Such a circuit permits to obtain optimal relation between input resistance, low-frequency noises and transconductance which provides uniform gain of the transducer in the frequency range of 0.6-12 MHz and permits to construct a transistor spectrometer of NQR not yielding to a lamp spectrometer in sensitivity [ru

Parametrization of the radiation induced leakage current increase of NMOS transistors

CERN Document Server

Backhaus, Malte

2017-01-13

The increase of the leakage current of NMOS transistors during exposure to ionizing radiation is known and well studied. Radiation hardness by design techniques have been developed to mitigate this effect and have been successfully used. More recent developments in smaller feature size technologies do not make use of these techniques due to their drawbacks in terms of logic density and requirement of dedicated libraries. During operation the resulting increase of the supply current is a serious challenge and needs to be considered during the system design. A simple parametrization of the leakage current of NMOS transistors as a function of total ionizing dose is presented. The parametrization uses a transistor transfer characteristics of the parasitic transistor along the shallow trench isolation to describe the leakage current of the nominal transistor. Together with a parametrization of the number of positive charges trapped in the silicon dioxide and number of activated interface traps in the silicon to si...

Collective CO2 laser scattering on moving discharge structures in the submillimeter range in a magnetohydrodynamic generator

NARCIS (Netherlands)

de Haas, J.C.M.; Schenkelaars, H.J.W.; vd Mortel, P.J.; Schram, D.C.; Veefkind, A.

1986-01-01

Collective scattering of CO/sub 2/ laser light on electrons is used to determine the radial scale length of the discharge structures occurring in a closed cycle magnetohydrodynamic generator. Heterodyne detection of scattered radiation is used to obtain a spatial resolution in the submillimeter

Junctionless Cooper pair transistor

Energy Technology Data Exchange (ETDEWEB)

Arutyunov, K. Yu., E-mail: konstantin.yu.arutyunov@jyu.fi [National Research University Higher School of Economics , Moscow Institute of Electronics and Mathematics, 101000 Moscow (Russian Federation); P.L. Kapitza Institute for Physical Problems RAS , Moscow 119334 (Russian Federation); Lehtinen, J.S. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, FI-02044 VTT (Finland)

2017-02-15

Highlights: • Junctionless Cooper pair box. • Quantum phase slips. • Coulomb blockade and gate modulation of the Coulomb gap. - Abstract: Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by ±2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime was used. The current–voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field.

Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes.

Science.gov (United States)

Cao, Xuan; Cao, Yu; Zhou, Chongwu

2016-01-26

Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes. Nevertheless, previous research effort only led to nanotube thin-film transistors with the smallest bending radius down to 1 mm. In this paper, we have realized the full potential of carbon nanotubes by making ultraflexible and imperceptible p-type transistors and circuits with a bending radius down to 40 μm. In addition, the resulted transistors show mobility up to 12.04 cm(2) V(-1) S(-1), high on-off ratio (∼10(6)), ultralight weight (transistors and circuits have great potential to work as indispensable components for ultraflexible complementary electronics.

DUST AND GAS IN THE MAGELLANIC CLOUDS FROM THE HERITAGE HERSCHEL KEY PROJECT. I. DUST PROPERTIES AND INSIGHTS INTO THE ORIGIN OF THE SUBMILLIMETER EXCESS EMISSION

Energy Technology Data Exchange (ETDEWEB)

Gordon, Karl D.; Roman-Duval, Julia; Meixner, Margaret [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Bot, Caroline [Observatoire astronomique de Strasbourg, Université de Strasbourg, CNRS, UMR 7550, 11 rue de l Université, F-67000 Strasbourg (France); Babler, Brian [Department of Astronomy, 475 North Charter Street, University of Wisconsin, Madison, WI 53706 (United States); Bernard, Jean-Philippe [CESR, Université de Toulouse, UPS, 9 Avenue du Colonel Roche, F-31028 Toulouse, Cedex 4 (France); Bolatto, Alberto; Jameson, Katherine [Department of Astronomy, Lab for Millimeter-wave Astronomy, University of Maryland, College Park, MD 20742-2421 (United States); Boyer, Martha L. [Observational Cosmology Lab, Code 665, NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Clayton, Geoffrey C. [Department of Physics and Astronomy, Louisiana State University, 233-A Nicholson Hall, Tower Drive, Baton Rouge, LA 70803 (United States); Engelbracht, Charles [Steward Observatory, University of Arizona, 933 North Cherry Avenue, Tucson, AZ 85721 (United States); Fukui, Yasuo [Department of Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602 (Japan); Galametz, Maud [European Southern Observatory, Karl-Schwarzschild-Str. 2, D-85748 Garching-bei-Mnchen (Germany); Galliano, Frederic; Hony, Sacha; Lebouteiller, Vianney [CEA, Laboratoire AIM, Irfu/SAp, Orme des Merisiers, F-91191 Gif-sur-Yvette (France); Hughes, Annie [Max-Planck-Institut für Astronomie, Königstuhl 17, D-69117 Heidelberg (Germany); Indebetouw, Remy [Department of Astronomy, University of Virginia, and National Radio Astronomy Observatory, 520 Edgemont Road, Charlottesville, VA 22903 (United States); Israel, Frank P. [Sterrewacht Leiden, Leiden University, P.O. Box 9513, NL-2300 RA Leiden (Netherlands); Kawamura, Akiko [National Astronomical Observatory of Japan, Osawa, Mitaka, Tokyo, 181-8588 (Japan); and others

2014-12-20

The dust properties in the Large and Small Magellanic clouds (LMC/SMC) are studied using the HERITAGE Herschel Key Project photometric data in five bands from 100 to 500 μm. Three simple models of dust emission were fit to the observations: a single temperature blackbody modified by a power-law emissivity (SMBB), a single temperature blackbody modified by a broken power-law emissivity (BEMBB), and two blackbodies with different temperatures, both modified by the same power-law emissivity (TTMBB). Using these models, we investigate the origin of the submillimeter excess, defined as the submillimeter emission above that expected from SMBB models fit to observations <200 μm. We find that the BEMBB model produces the lowest fit residuals with pixel-averaged 500 μm submillimeter excesses of 27% and 43% for the LMC and SMC, respectively. Adopting gas masses from previous works, the gas-to-dust ratios calculated from our fitting results show that the TTMBB fits require significantly more dust than are available even if all the metals present in the interstellar medium (ISM) were condensed into dust. This indicates that the submillimeter excess is more likely to be due to emissivity variations than a second population of colder dust. We derive integrated dust masses of (7.3 ± 1.7) × 10{sup 5} and (8.3 ± 2.1) × 10{sup 4} M {sub ☉} for the LMC and SMC, respectively. We find significant correlations between the submillimeter excess and other dust properties; further work is needed to determine the relative contributions of fitting noise and ISM physics to the correlations.

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

Science.gov (United States)

Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2017-07-10

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Optimizing switching frequency of the soliton transistor by numerical simulation

Energy Technology Data Exchange (ETDEWEB)

Izadyar, S., E-mail: S_izadyar@yahoo.co [Department of Electronics, Khaje Nasir Toosi University of Technology, Shariati Ave., Tehran (Iran, Islamic Republic of); Niazzadeh, M.; Raissi, F. [Department of Electronics, Khaje Nasir Toosi University of Technology, Shariati Ave., Tehran (Iran, Islamic Republic of)

2009-10-15

In this paper, by numerical simulations we have examined different ways to increase the soliton transistor's switching frequency. Speed of the solitons in a soliton transistor depends on various parameters such as the loss of the junction, the applied bias current, and the transmission line characteristics. Three different ways have been examined; (i) decreasing the size of the transistor without losing transistor effect. (ii) Decreasing the amount of loss of the junction to increase the soliton speed. (iii) Optimizing the bias current to obtain maximum possible speed. We have obtained the shortest possible length to have at least one working soliton inside the transistor. The dimension of the soliton can be decreased by changing the inductance of the transmission line, causing a further decrease in the size of the transistor, however, a trade off between the size and the inductance is needed to obtain the optimum switching speed. Decreasing the amount of loss can be accomplished by increasing the characteristic tunneling resistance of the device, however, a trade off is again needed to make soliton and antisoliton annihilation possible. By increasing the bias current, the forces acting the solitons increases and so does their speed. Due to nonuniform application of bias current a self induced magnetic field is created which can result in creation of unwanted solitons. Optimum bias current application can result in larger bias currents and larger soliton speed. Simulations have provided us with such an arrangement of bias current paths.

Optimizing switching frequency of the soliton transistor by numerical simulation

International Nuclear Information System (INIS)

Izadyar, S.; Niazzadeh, M.; Raissi, F.

2009-01-01

In this paper, by numerical simulations we have examined different ways to increase the soliton transistor's switching frequency. Speed of the solitons in a soliton transistor depends on various parameters such as the loss of the junction, the applied bias current, and the transmission line characteristics. Three different ways have been examined; (i) decreasing the size of the transistor without losing transistor effect. (ii) Decreasing the amount of loss of the junction to increase the soliton speed. (iii) Optimizing the bias current to obtain maximum possible speed. We have obtained the shortest possible length to have at least one working soliton inside the transistor. The dimension of the soliton can be decreased by changing the inductance of the transmission line, causing a further decrease in the size of the transistor, however, a trade off between the size and the inductance is needed to obtain the optimum switching speed. Decreasing the amount of loss can be accomplished by increasing the characteristic tunneling resistance of the device, however, a trade off is again needed to make soliton and antisoliton annihilation possible. By increasing the bias current, the forces acting the solitons increases and so does their speed. Due to nonuniform application of bias current a self induced magnetic field is created which can result in creation of unwanted solitons. Optimum bias current application can result in larger bias currents and larger soliton speed. Simulations have provided us with such an arrangement of bias current paths.

Evolution of the MOS transistor - From conception to VLSI

International Nuclear Information System (INIS)

Sah, C.T.

1988-01-01

Historical developments of the metal-oxide-semiconductor field-effect-transistor (MOSFET) during the last sixty years are reviewed, from the 1928 patent disclosures of the field-effect conductivity modulation concept and the semiconductor triodes structures proposed by Lilienfeld to the 1947 Shockley-originated efforts which led to the laboratory demonstration of the modern silicon MOSFET thirty years later in 1960. A survey is then made of the milestones of the past thirty years leading to the latest submicron silicon logic CMOS (Complementary MOS) and BICMOS (Bipolar-Junction-Transistor CMOS combined) arrays and the three-dimensional and ferroelectric extensions of Dennard's one-transistor dynamic random access memory (DRAM) cell. Status of the submicron lithographic technologies (deep ultra-violet light, X-ray, electron-beam) are summarized. Future trends of memory cell density and logic gate speed are projected. Comparisons of the switching speed of the silicon MOSFET with that of silicon bipolar and GaAs field-effect transistors are reviewed. Use of high-temperature superconducting wires and GaAs-on-Si monolithic semiconductor optical clocks to break the interconnect-wiring delay barrier is discussed. Further needs in basic research and mathematical modeling on the failure mechanisms in submicron silicon transistors at high electric fields (hot electron effects) and in interconnection conductors at high current densities and low as well as high electric fields (electromigration) are indicated

Study on ionizing radiation effects of bipolar transistor with BPSG films

International Nuclear Information System (INIS)

Lu Man; Zhang Xiaoling; Xie Xuesong; Sun Jiangchao; Wang Pengpeng; Lu Changzhi; Zhang Yanxiu

2013-01-01

Background: Because of the damage induced by ionizing radiation, bipolar transistors in integrated voltage regulator could induce the current gain degradation and increase leakage current. This will bring serious problems to electronic system. Purpose: In order to ensure the reliability of the device work in the radiation environments, the device irradiation reinforcement technology is used. Methods: The characteristics of 60 Co γ irradiation and annealing at different temperatures in bipolar transistors and voltage regulators (JW117) with different passive films for SiO 2 +BPSG+SiO 2 and SiO 2 +SiN have been investigated. Results: The devices with BPSG film enhanced radiation tolerance significantly. Because BPSG films have better absorption for Na + in SiO 2 layer, the surface recombination rate of base region in a bipolar transistor and the excess base current have been reduced. It may be the main reason for BJT with BPSG film having a good radiation hardness. And annealing experiments at different temperatures after irradiation ensure the reliability of the devices with BPSG films. Conclusions: A method of improving the ionizing irradiation hardness of bipolar transistors is proposed. As well as the linear integrated circuits which containing bipolar transistors, an experimental basis for the anti-ionizing radiation effects of bipolar transistors is provided. (authors)

Terahertz Plasma Waves in Two Dimensional Quantum Electron Gas with Electron Scattering

International Nuclear Information System (INIS)

Zhang Liping

2015-01-01

We investigate the Terahertz (THz) plasma waves in a two-dimensional (2D) electron gas in a nanometer field effect transistor (FET) with quantum effects, the electron scattering, the thermal motion of electrons and electron exchange-correlation. We find that, while the electron scattering, the wave number along y direction and the electron exchange-correlation suppress the radiation power, but the thermal motion of electrons and the quantum effects can amplify the radiation power. The radiation frequency decreases with electron exchange-correlation contributions, but increases with quantum effects, the wave number along y direction and thermal motion of electrons. It is worth mentioning that the electron scattering has scarce influence on the radiation frequency. These properties could be of great help to the realization of practical THz plasma oscillations in nanometer FET. (paper)

High-Sensitivity AGN Polarimetry at Sub-Millimeter Wavelengths

Directory of Open Access Journals (Sweden)

Ivan Martí-Vidal

2017-10-01

Full Text Available The innermost regions of radio loud Active Galactic Nuclei (AGN jets are heavily affected by synchrotron self-absorption, due to the strong magnetic fields and high particle densities in these extreme zones. The only way to overcome this absorption is to observe at sub-millimeter wavelengths, although polarimetric observations at such frequencies have so far been limited by sensitivity and calibration accuracy. However, new generation instruments such as the Atacama Large mm/sub-mm Array (ALMA overcome these limitations and are starting to deliver revolutionary results in the observational studies of AGN polarimetry. Here we present an overview of our state-of-the-art interferometric mm/sub-mm polarization observations of AGN jets with ALMA (in particular, the gravitationally-lensed sources PKS 1830−211 and B0218+359, which allow us to probe the magneto-ionic conditions at the regions closest to the central black holes.

TWO BRIGHT SUBMILLIMETER GALAXIES IN A z = 4.05 PROTOCLUSTER IN GOODS-NORTH, AND ACCURATE RADIO-INFRARED PHOTOMETRIC REDSHIFTS

International Nuclear Information System (INIS)

Daddi, E.; Elbaz, D.; Mancini, C.; Dannerbauer, H.; Stern, D.; Dickinson, M.; Pope, A.; Morrison, G.; Giavalisco, M.; Spinrad, H.

2009-01-01

We present the serendipitous discovery of molecular gas CO emission lines with the IRAM Plateau de Bure interferometer coincident with two luminous submillimeter galaxies (SMGs) in the Great Observatories Origins Deep Survey North (GOODS-N) field. The identification of the millimeter emission lines as CO[4-3] at z = 4.05 is based on the optical and near-IR photometric redshifts, radio-infrared photometric redshifts, and Keck+DEIMOS optical spectroscopy. These two galaxies include the brightest submillimeter source in the field (GN20; S 850μm = 20.3 mJy, z CO = 4.055 ± 0.001) and its companion (GN20.2; S 850μm = 9.9 mJy, z CO = 4.051 ± 0.003). These are among the most distant submillimeter-selected galaxies reliably identified through CO emission and also some of the most luminous known. GN20.2 has a possible additional counterpart and a luminous active galactic nucleus inside its primary counterpart revealed in the radio. Continuum emission of 0.3 mJy at 3.3 mm (0.65 mm in the rest frame) is detected at 5σ for GN20, the first dust continuum detection in an SMG at such long wavelength, unveiling a spectral energy distribution that is similar to local ultra luminous IR galaxies. In terms of CO to bolometric luminosities, stellar mass, and star formation rates (SFRs), these newly discovered z > 4 SMGs are similar to z ∼ 2-3 SMGs studied to date. These z ∼ 4 SMGs have much higher specific star formation rates than those of typical B-band dropout Lyman break galaxies at the same redshift. The stellar mass-SFR correlation for normal galaxies does not seem to evolve much further, between z ∼ 2 and z ∼ 4. A significant z = 4.05 spectroscopic redshift spike is observed in GOODS-N, and a strong spatial overdensity of B-band dropouts and IRAC selected z > 3.5 galaxies appears to be centered on the GN20 and GN20.2 galaxies. This suggests a protocluster structure with total mass ∼10 14 M sun . Using photometry at mid-IR (24 μm), submillimeter (850 μm), and

Submillimeter and microwave residual losses in epitaxial films of Y-Ba-Cu-O and Tl-Ca-Ba-Cu-O

International Nuclear Information System (INIS)

Miller, D.; Richards, P.L.; Eom, C.B.; Geballe, T.H.; Etemad, S.; Inam, A.; Venkatesan, T.; Martens, J.S.; Lee, W.Y.

1992-12-01

We have used a novel bolometric technique and a resonant technique to obtain accurate submillimeter and microwave residual loss data for epitaxial thin films of YBa 2 Cu 3 O 7 , Tl 2 Ca 2 Ba 2 Cu 3 O 10 and Tl 2 CaBa 2 Cu 2 O 8 . For all films we obtain good agreement between the submillimeter and microwave data, with the residual losses in both the Y-Ba-Cu-O and Tl-Ca-Ba-Cu-O films scaling approximately as frequency squared below ∼ 1 THz. We are able to fit the losses in the Y-Ba-Cu-O films to a two fluid and a weakly coupled grain model for the a-b planeconductivity, in good agreement with results from a Kramers-Kronig analysis of the loss data

Oscillation of Critical Current by Gate Voltage in Cooper Pair Transistor

International Nuclear Information System (INIS)

Kim, N.; Cheong, Y.; Song, W.

2010-01-01

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

Far-infrared and submillimeter brightness temperatures of the giant planets

International Nuclear Information System (INIS)

Hildebrand, R.H.; Loewenstein, R.F.; Harper, D.A.; Orton, G.S.; Keene, J.; Yerkes Observatory, Williams Bay, WI; California Institute of Technology, Jet Propulsion Laboratory, Pasadena; California Institute of Technology, Pasadena)

1985-01-01

The brightness temperatures of Jupiter, Saturn, Uranus, and Neptune were measured in the 35-1000 micron range with the 3-m NASA Infrared Telescope Facility (at wavelengths greater than 350 microns) and with the Kuiper Airborne Observatory (at wavelengths less than 350 microns). The data indicate the presence in Jupiter's spectrum of excess radiation (compared to theoretical models) at 300-400 microns. In addition, slightly less flux was observed from Saturn at 200 microns than predicted by atmospheric models, which suggests the possible presence of an unmodeled absorber. The submillimeter fluxes from Uranus and Neptune appear to be most consistent with low mixing ratios (less than 1 percent) of CH 4 in their deep atmospheres. 73 refs

SUBMILLIMETER POLARIZATION SPECTRUM IN THE VELA C MOLECULAR CLOUD

Energy Technology Data Exchange (ETDEWEB)

Gandilo, Natalie N. [Department of Astronomy and Astrophysics, University of Toronto, 50 St. George Street Toronto, ON M5S 3H4 (Canada); Ade, Peter A. R.; Pascale, Enzo [Cardiff University, School of Physics and Astronomy, Queens Buildings, The Parade, Cardiff, CF24 3AA (United Kingdom); Angilè, Francesco E.; Devlin, Mark J.; Dober, Bradley; Galitzki, Nicholas; Klein, Jeffrey [Department of Physics and Astronomy, University of Pennsylvania, 209 South 33rd Street, Philadelphia, PA, 19104 (United States); Ashton, Peter; Fissel, Laura M.; Matthews, Tristan G.; Novak, Giles [Center for Interdisciplinary Exploration and Research in Astrophysics (CIERA) and Department of Physics and Astronomy, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208 (United States); Benton, Steven J. [Department of Physics, Princeton University, Jadwin Hall, Princeton, NJ 08544 (United States); Fukui, Yasuo [Department of Physics and Astrophysics, Nagoya University, Nagoya 464-8602 (Japan); Korotkov, Andrei L. [Department of Physics, Brown University, 182 Hope Street, Providence, RI, 02912 (United States); Li, Zhi-Yun [Department of Astronomy, University of Virginia, 530 McCormick Road, Charlottesville, VA 22904 (United States); Martin, Peter G. [CITA, University of Toronto, 60 St. George Street, Toronto, ON M5S 3H8 (Canada); Moncelsi, Lorenzo [California Institute of Technology, 1200 E. California Boulevard, Pasadena, CA, 91125 (United States); Nakamura, Fumitaka [National Astronomical Observatory, Mitaka, Tokyo 181-8588 (Japan); Netterfield, Calvin B., E-mail: ngandil1@jhu.edu [Department of Physics and Astronomy, Johns Hopkins University, 3701 San Martin Drive, Baltimore, Maryland (United States); and others

2016-06-20

Polarization maps of the Vela C molecular cloud were obtained at 250, 350, and 500 μ m during the 2012 flight of the balloon-borne telescope BLASTPol. These measurements are used in conjunction with 850 μ m data from Planck to study the submillimeter spectrum of the polarization fraction for this cloud. The spectrum is relatively flat and does not exhibit a pronounced minimum at λ ∼ 350 μ m as suggested by previous measurements of other molecular clouds. The shape of the spectrum does not depend strongly on the radiative environment of the dust, as quantified by the column density or the dust temperature obtained from Herschel data. The polarization ratios observed in Vela C are consistent with a model of a porous clumpy molecular cloud being uniformly heated by the interstellar radiation field.

Fundamentals of RF and microwave transistor amplifiers

CERN Document Server

Bahl, Inder J

2009-01-01

A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

Transistor and integrated circuit manufacture

Energy Technology Data Exchange (ETDEWEB)

Colman, D

1978-09-27

This invention relates to the manufacture of transistors and integrated circuits by ion bombardment techniques and is particularly, but not exclusively, of value in the manufacture of so-called integrated injection logic circuitry.

Centralized operations and maintenance planning at the Atacama Large Millimeter/submillimeter Array (ALMA)

Science.gov (United States)

Lopez, Bernhard; Whyborn, Nicholas D.; Guniat, Serge; Hernandez, Octavio; Gairing, Stefan

2016-07-01

The Atacama Large Millimeter/submillimeter Array (ALMA) is a joint project between astronomical organizations in Europe, North America, and East Asia, in collaboration with the Republic of Chile. ALMA consists of 54 twelve-meter antennas and 12 seven-meter antennas operating as an aperture synthesis array in the (sub)millimeter wavelength range. Since the inauguration of the observatory back in March 2013 there has been a continuous effort to establish solid operations processes for effective and efficient management of technical and administrative tasks on site. Here a key aspect had been the centralized maintenance and operations planning: input is collected from science stakeholders, the computerized maintenance management system (CMMS) and from the technical teams spread around the world, then this information is analyzed and consolidated based on the established maintenance strategy, the observatory long-term plan and the short-term priorities definitions. This paper presents the high-level process that has been developed for the planning and scheduling of planned- and unplanned maintenance tasks, and for site operations like the telescope array reconfiguration campaigns. We focus on the centralized planning approach by presenting its genesis, its current implementation for the observatory operations including related planning products, and we explore the necessary next steps in order to fully achieve a comprehensive centralized planning approach for ALMA in steady-state operations.

Going ballistic: Graphene hot electron transistors

Science.gov (United States)

Vaziri, S.; Smith, A. D.; Östling, M.; Lupina, G.; Dabrowski, J.; Lippert, G.; Mehr, W.; Driussi, F.; Venica, S.; Di Lecce, V.; Gnudi, A.; König, M.; Ruhl, G.; Belete, M.; Lemme, M. C.

2015-12-01

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.

Submillimeter heterodyne receiver for the CSO telescope

International Nuclear Information System (INIS)

Gulkis, S.

1988-01-01

This task is to build a cryogenically cooled 620 to 700 GHz astronomical receiver that will be used as a facility instrument at the CalTech Submillimeter Observatory (CSO) on Mauna Kea, Hawaii. The receiver will have applications as a very high resolution spectrometer to investigate spectral lines in planetary and satellite atmospheres, and comets. The receiver will also be used to make continuum measurements of planets, satellites, and asteroids. During FY88, a scale model (200 GHz) SIS mixer radiometer was built and intrgrated into a cryostat designed for use on the CSO telescope. This system will serve as a model to guide the work on the higher frequency mixer. A solid state local oscillator source that covers two bands in the 600 to 700 GHz has been developed under contract JPL and will be delivered before the end of the year. Work has continued on the SIS materials needed for the 620 to 700 GHz mixer. Test hardware has been developed which allow the 1 to 5 curves for SIS material to be easily measured

Tin Dioxide Electrolyte-Gated Transistors Working in Depletion and Enhancement Modes.

Science.gov (United States)

Valitova, Irina; Natile, Marta Maria; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2017-10-25

Metal oxide semiconductors are interesting for next-generation flexible and transparent electronics because of their performance and reliability. Tin dioxide (SnO 2 ) is a very promising material that has already found applications in sensing, photovoltaics, optoelectronics, and batteries. In this work, we report on electrolyte-gated, solution-processed polycrystalline SnO 2 transistors on both rigid and flexible substrates. For the transistor channel, we used both unpatterned and patterned SnO 2 films. Since decreasing the SnO 2  area in contact with the electrolyte increases the charge-carrier density, patterned transistors operate in the depletion mode, whereas unpatterned ones operate in the enhancement mode. We also fabricated flexible SnO 2 transistors that operate in the enhancement mode that can withstand moderate mechanical bending.

Bottom-Up Tri-gate Transistors and Submicrosecond Photodetectors from Guided CdS Nanowalls.

Science.gov (United States)

Xu, Jinyou; Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

2017-11-08

Tri-gate transistors offer better performance than planar transistors by exerting additional gate control over a channel from two lateral sides of semiconductor nanowalls (or "fins"). Here we report the bottom-up assembly of aligned CdS nanowalls by a simultaneous combination of horizontal catalytic vapor-liquid-solid growth and vertical facet-selective noncatalytic vapor-solid growth and their parallel integration into tri-gate transistors and photodetectors at wafer scale (cm 2 ) without postgrowth transfer or alignment steps. These tri-gate transistors act as enhancement-mode transistors with an on/off current ratio on the order of 10 8 , 4 orders of magnitude higher than the best results ever reported for planar enhancement-mode CdS transistors. The response time of the photodetector is reduced to the submicrosecond level, 1 order of magnitude shorter than the best results ever reported for photodetectors made of bottom-up semiconductor nanostructures. Guided semiconductor nanowalls open new opportunities for high-performance 3D nanodevices assembled from the bottom up.

Effects on focused ion beam irradiation on MOS transistors

International Nuclear Information System (INIS)

Campbell, A.N.; Peterson, K.A.; Fleetwood, D.M.; Soden, J.M.

1997-01-01

The effects of irradiation from a focused ion beam (FIB) system on MOS transistors are reported systematically for the first time. Three MOS transistor technologies, with 0.5, 1, and 3 μm minimum feature sizes and with gate oxide thicknesses ranging from 11 to 50 nm, were analyzed. Significant shifts in transistor parameters (such as threshold voltage, transconductance, and mobility) were observed following irradiation with a 30 keV Ga + focused ion beam with ion doses varying by over 5 orders of magnitude. The apparent damage mechanism (which involved the creation of interface traps, oxide trapped charge, or both) and extent of damage were different for each of the three technologies investigated

Retrieval of an ice water path over the ocean from ISMAR and MARSS millimeter and submillimeter brightness temperatures

Directory of Open Access Journals (Sweden)

M. Brath

2018-02-01

Full Text Available A neural-network-based retrieval method to determine the snow ice water path (SIWP, liquid water path (LWP, and integrated water vapor (IWV from millimeter and submillimeter brightness temperatures, measured by using airborne radiometers (ISMAR and MARSS, is presented. The neural networks were trained by using atmospheric profiles from the ICON numerical weather prediction (NWP model and by radiative transfer simulations using the Atmospheric Radiative Transfer Simulator (ARTS. The basic performance of the retrieval method was analyzed in terms of offset (bias and the median fractional error (MFE, and the benefit of using submillimeter channels was studied in comparison to pure microwave retrievals. The retrieval is offset-free for SIWP  > 0.01 kg m−2, LWP  > 0.1 kg m−2, and IWV  > 3 kg m−2. The MFE of SIWP decreases from 100 % at SIWP  =  0.01 kg m−2 to 20 % at SIWP  =  1 kg m−2 and the MFE of LWP from 100 % at LWP  = 0.05 kg m−2 to 30 % at LWP  =  1 kg m−2. The MFE of IWV for IWV  > 3 kg m−2 is 5 to 8 %. The SIWP retrieval strongly benefits from submillimeter channels, which reduce the MFE by a factor of 2, compared to pure microwave retrievals. The IWV and the LWP retrievals also benefit from submillimeter channels, albeit to a lesser degree. The retrieval was applied to ISMAR and MARSS brightness temperatures from FAAM flight B897 on 18 March 2015 of a precipitating frontal system west of the coast of Iceland. Considering the given uncertainties, the retrieval is in reasonable agreement with the SIWP, LWP, and IWV values simulated by the ICON NWP model for that flight. A comparison of the retrieved IWV with IWV from 12 dropsonde measurements shows an offset of 0.5 kg m−2 and an RMS difference of 0.8 kg m−2, showing that the retrieval of IWV is highly effective even under cloudy conditions.

Light programmable organic transistor memory device based on hybrid dielectric

Science.gov (United States)

Ren, Xiaochen; Chan, Paddy K. L.

2013-09-01

We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

Transistor and integrated circuit manufacture

International Nuclear Information System (INIS)

Colman, D.

1978-01-01

This invention relates to the manufacture of transistors and integrated circuits by ion bombardment techniques and is particularly, but not exclusively, of value in the manufacture of so-called integrated injection logic circuitry. (author)

Method for double-sided processing of thin film transistors

Science.gov (United States)

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2008-04-08

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Fully printed metabolite sensor using organic electrochemical transistor

Science.gov (United States)

Scheiblin, Gaëtan; Aliane, Abdelkader; Coppard, Romain; Owens, Róisín. M.; Mailley, Pascal; Malliaras, George G.

2015-08-01

As conducting polymer based devices, organic electrochemical transistors (OECTs) are suited for printing process. The convenience of the screen-printing techniques allowed us to design and fabricate OECTs with a selected design and using different gate material. Depending on the material used, we were able to tune the transistor for different biological application. Ag/AgCl gate provided transistor with good transconductance, and electrochemical sensitivity to pH was provided by polyaniline ink. Finally, we validate the enzymatic sensing of glucose and lactate with a Poly(3,4-ethylene dioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) gate often used due to its biocompatible properties. The screen-printing process allowed us to fabricate a large amount of devices in a short period of time, using only commercially available grades of ink, showing by this way the possible transfer to industrial purpose.

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

Science.gov (United States)

Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2012-01-01

Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

Transport and performance of a gate all around InAs nanowire transistor

International Nuclear Information System (INIS)

Alam, Khairul

2009-01-01

The transport physics and performance metrics of a gate all around an InAs nanowire transistor are studied using a three-dimensional quantum simulation. The transistor action of an InAs nanowire transistor occurs by modulating the transmission coefficient of the device. This action is different from a conventional metal-oxide-semiconductor field effect transistor, where the transistor action occurs by modulating the charge in the channel. The device has 82% tunneling current in the off-state and 81% thermal current in the on-state. The two current components become equal at a gate bias at which an approximate source-channel flat-band condition is achieved. Prior to this gate bias, the tunneling current dominates and the thermal current dominates beyond it. The device has an on/off current ratio of 7.84 × 10 5 and an inverse subthreshold slope of 63 mV dec −1 . The transistor operates in the quantum capacitance limit with a normalized transconductance value of 14.43 mS µm −1 , an intrinsic switching delay of 90.1675 fs, and an intrinsic unity current gain frequency of 6.8697 THz

CORRELATIONS IN THE (SUB)MILLIMETER BACKGROUND FROM ACT Multiplication-Sign BLAST

Energy Technology Data Exchange (ETDEWEB)

Hajian, Amir; Battaglia, Nick; Bond, J. Richard [Canadian Institute for Theoretical Astrophysics, University of Toronto, Toronto, ON M5S 3H8 (Canada); Viero, Marco P.; Bock, James J. [California Institute of Technology, Pasadena, CA 91125 (United States); Addison, Graeme [Department of Astrophysics, Oxford University, Oxford, OX1 3RH (United Kingdom); Aguirre, Paula [Departamento de Astronomia y Astrofisica, Facultad de Fisica, Pontificia Universidad Catolica, Casilla 306, Santiago 22 (Chile); Appel, John William; Duenner, Rolando; Essinger-Hileman, Thomas; Fowler, Joseph W.; Hincks, Adam D. [Joseph Henry Laboratories of Physics, Jadwin Hall, Princeton University, Princeton, NJ 08544 (United States); Das, Sudeep; Dunkley, Joanna [Department of Astrophysical Sciences, Peyton Hall, Princeton University, Princeton, NJ 08544 (United States); Devlin, Mark J.; Dicker, Simon R. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104 (United States); Hughes, John P. [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854-8019 (United States); Halpern, Mark [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC V6T 1Z4 (Canada); Hasselfield, Matthew [Laboratoire APC, Universite Paris Diderot, 75205 Paris (France); Hilton, Matt [Astrophysics and Cosmology Research Unit, School of Mathematical Sciences, University of KwaZulu-Natal, Durban 4041 (South Africa); and others

2012-01-01

We present measurements of the auto- and cross-frequency correlation power spectra of the cosmic (sub)millimeter background at 250, 350, and 500 {mu}m (1200, 860, and 600 GHz) from observations made with the Balloon-borne Large Aperture Submillimeter Telescope (BLAST); and at 1380 and 2030 {mu}m (218 and 148 GHz) from observations made with the Atacama Cosmology Telescope (ACT). The overlapping observations cover 8.6 deg{sup 2} in an area relatively free of Galactic dust near the south ecliptic pole. The ACT bands are sensitive to radiation from the cosmic microwave background, to the Sunyaev-Zel'dovich effect from galaxy clusters, and to emission by radio and dusty star-forming galaxies (DSFGs), while the dominant contribution to the BLAST bands is from DSFGs. We confirm and extend the BLAST analysis of clustering with an independent pipeline and also detect correlations between the ACT and BLAST maps at over 25{sigma} significance, which we interpret as a detection of the DSFGs in the ACT maps. In addition to a Poisson component in the cross-frequency power spectra, we detect a clustered signal at 4{sigma}, and using a model for the DSFG evolution and number counts, we successfully fit all of our spectra with a linear clustering model and a bias that depends only on redshift and not on scale. Finally, the data are compared to, and generally agree with, phenomenological models for the DSFG population. This study demonstrates the constraining power of the cross-frequency correlation technique to constrain models for the DSFGs. Similar analyses with more data will impose tight constraints on future models.

Advantages of cortical surface reconstruction using submillimeter 7 T MEMPRAGE.

Science.gov (United States)

Zaretskaya, Natalia; Fischl, Bruce; Reuter, Martin; Renvall, Ville; Polimeni, Jonathan R

2018-01-15

Recent advances in MR technology have enabled increased spatial resolution for routine functional and anatomical imaging, which has created demand for software tools that are able to process these data. The availability of high-resolution data also raises the question of whether higher resolution leads to substantial gains in accuracy of quantitative morphometric neuroimaging procedures, in particular the cortical surface reconstruction and cortical thickness estimation. In this study we adapted the FreeSurfer cortical surface reconstruction pipeline to process structural data at native submillimeter resolution. We then quantified the differences in surface placement between meshes generated from (0.75 mm) 3 isotropic resolution data acquired in 39 volunteers and the same data downsampled to the conventional 1 mm 3 voxel size. We find that when processed at native resolution, cortex is estimated to be thinner in most areas, but thicker around the Cingulate and the Calcarine sulci as well as in the posterior bank of the Central sulcus. Thickness differences are driven by two kinds of effects. First, the gray-white surface is found closer to the white matter, especially in cortical areas with high myelin content, and thus low contrast, such as the Calcarine and the Central sulci, causing local increases in thickness estimates. Second, the gray-CSF surface is placed more interiorly, especially in the deep sulci, contributing to local decreases in thickness estimates. We suggest that both effects are due to reduced partial volume effects at higher spatial resolution. Submillimeter voxel sizes can therefore provide improved accuracy for measuring cortical thickness. Copyright © 2017 Elsevier Inc. All rights reserved.

HerMES: Spectral energy distributions of submillimeter galaxies at z > 4

International Nuclear Information System (INIS)

Huang, J.-S.; Rigopoulou, D.; Magdis, G.; Rowan-Robinson, M.; Clements, D. L.; Dai, Y.; Fazio, G. G.; Bock, J. J.; Burgarella, D.; Chapman, S.; Cooray, A.; Farrah, D.; Glenn, J.; Oliver, S.; Smith, A. J.; Wang, L.; Page, M.; Symeonidis, M.; Riechers, D.; Roseboom, I.

2014-01-01

We present a study of the infrared properties for a sample of seven spectroscopically confirmed submillimeter galaxies (SMGs) at z > 4.0. By combining ground-based near-infrared, Spitzer IRAC and MIPS, Herschel SPIRE, and ground-based submillimeter/millimeter photometry, we construct their spectral energy distributions (SEDs) and a composite model to fit the SEDs. The model includes a stellar emission component at λ rest < 3.5 μm, a hot dust component peaking at λ rest ∼ 5 μm, and cold dust component which becomes significant for λ rest > 50 μm. Six objects in the sample are detected at 250 and 350 μm. The dust temperatures for the sources in this sample are in the range of 40-80 K, and their L FIR ∼ 10 13 L ☉ qualifies them as hyper-luminous infrared galaxies. The mean FIR-radio index for this sample is around (q) = 2.2 indicating no radio excess in their radio emission. Most sources in the sample have 24 μm detections corresponding to a rest-frame 4.5 μm luminosity of Log 10 (L 4.5 /L ☉ ) = 11 ∼ 11.5. Their L 4.5 /L FIR ratios are very similar to those of starburst-dominated SMGs at z ∼ 2. The L CO – L FIR relation for this sample is consistent with that determined for local ULIRGs and SMGs at z ∼ 2. We conclude that SMGs at z > 4 are hotter and more luminous in the FIR but otherwise very similar to those at z ∼ 2. None of these sources show any sign of the strong QSO phase being triggered.

Dose enhancement effects of X ray radiation in bipolar transistors

International Nuclear Information System (INIS)

Chen Panxun

1997-01-01

The author has presented behaviour degradation and dose enhancement effects of bipolar transistors in X ray irradiation environment. The relative dose enhancement factors of X ray radiation were measured in bipolar transistors by the experiment methods. The mechanism of bipolar device dose enhancement was investigated

Worst-Case Bias During Total Dose Irradiation of SOI Transistors

International Nuclear Information System (INIS)

Ferlet-Cavrois, V.; Colladant, T.; Paillet, P.; Leray, J.-L; Musseau, O.; Schwank, James R.; Shaneyfelt, Marty R.; Pelloie, J.L.; Du Port de Poncharra, J.

2000-01-01

The worst case bias during total dose irradiation of partially depleted SOI transistors (from SNL and from CEA/LETI) is correlated to the device architecture. Experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide

Static Characteristics of the Ferroelectric Transistor Inverter

Science.gov (United States)

Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

2010-01-01

The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

Pulse GaAs field transistor amplifier with subnanosecond time transient

International Nuclear Information System (INIS)

Sidnev, A.N.

1987-01-01

Pulse amplifier on fast field effect GaAs transistors with Schottky barrier is described. The amplifier contains four cascades, the first three of which are made on combined transistors on the common-drain circuit. The last cascade is made on high-power field effect GaAs transistor for coordination with 50 ohm load. The amplifier operates within the range of input signals from 0.5 up to 100 mV with repetition frequency up to 16 Hz, The gain of the amplifier is ≅ 20 dB. The setting time at output pulses amplitude up to 1 V constitutes ∼ 0.2 ns

Investigations of Tunneling for Field Effect Transistors

OpenAIRE

Matheu, Peter

2012-01-01

Over 40 years of scaling dimensions for new and continuing product cycles has introduced new challenges for transistor design. As the end of the technology roadmap for semiconductors approaches, new device structures are being investigated as possible replacements for traditional metal-oxide-semiconductor field effect transistors (MOSFETs). Band-to-band tunneling (BTBT) in semiconductors, often viewed as an adverse effect of short channel lengths in MOSFETs, has been discussed as a promising ...

QUANTUM ELECTRONIC DEVICES: Superconducting Nb3Sn point contact in the submillimeter range of electromagnetic radiation

Science.gov (United States)

Belenov, É. M.; Danileĭko, M. V.; Derkach, V. E.; Romanenko, V. I.; Uskov, A. V.

1988-05-01

An investigation was made of the influence of submillimeter radiation emitted by an HCN laser operating at a frequency νl = 891 GHz on a superconducting point contact made of Nb3Sn. Three steps of the electric current were recorded. The experimental results indicated that such a contact could be used for frequency multiplication up to 3 THz.

Organic tunnel field effect transistors

KAUST Repository

Tietze, Max Lutz; Lussem, Bjorn; Liu, Shiyi

2017-01-01

Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer

Multi-channel spintronic transistor design based on magnetoelectric barriers and spin-orbital effects

International Nuclear Information System (INIS)

Fujita, T; Jalil, M B A; Tan, S G

2008-01-01

We present a spin transistor design based on spin-orbital interactions in a two-dimensional electron gas, with magnetic barriers induced by a patterned ferromagnetic gate. The proposed device overcomes certain shortcomings of previous spin transistor designs such as long device length and degradation of conductance modulation for multi-channel transport. The robustness of our device for multi-channel transport is unique in spin transistor designs based on spin-orbit coupling. The device is more practical in fabrication and experimental respects compared to previously conceived single-mode spin transistors

Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

Science.gov (United States)

Bu, Laju; Hu, Mengxing; Lu, Wanlong; Wang, Ziyu; Lu, Guanghao

2018-01-01

Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO 2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm 2 V -1 s -1 with an on/off ratio > 10 7 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Submillimeter and millimeter observations of solar system objects

International Nuclear Information System (INIS)

Muhleman, D.O.

1988-01-01

Planetary atmospheres and satellite surfaces are observed with the three element array at Caltech's Owens Valley Radio Observatory, Caltech's submillimeter telescope on Mauna Kea and at the 12-meter telescope at Kitt Peak. Researchers are primarily interested in spectroscopy of the atmospheres of Venus, Mars and Titan and the continuum structure of Saturn Rings, Galilean satellites, Neptune and Uranus. During the last year researchers completed a supersynthesis of the Saturn system at 2.8 mm with spatial resolution of 3 arc sec. They just completed a 4-confuguration synthesis of Venus in the CO absorption line. They hope to recover the wind patterns in the altitude range from 60 to 100 km where winds have never been measured. Two important questions are being investigated: (1) how high in the Venus atmosphere do 4-day winds extend, and (2) can we produce experiment proof (or disproof) of the subsolar-to-anti-solar flow (Dickenson winds) predicted by general circulation models

High-frequency self-aligned graphene transistors with transferred gate stacks

Science.gov (United States)

Cheng, Rui; Bai, Jingwei; Liao, Lei; Zhou, Hailong; Chen, Yu; Liu, Lixin; Lin, Yung-Chen; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-01-01

Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits. PMID:22753503

BUSFET -- A radiation-hardened SOI transistor

International Nuclear Information System (INIS)

Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

1999-01-01

The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, the authors propose a partially-depleted SOI transistor structure for mitigating the effects of trapped charge in the buried oxide on radiation hardness. They call this structure the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU or dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration, and the depth of the source. 3-D simulations show that for a body doping concentration of 10 18 cm -3 , a drain bias of 3 V, and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3 x 10 17 cm -3 , a thicker silicon film (300 nm) must be used

Progresses in organic field-effect transistors and molecular electronics

Institute of Scientific and Technical Information of China (English)

Wu Weiping; Xu Wei; Hu Wenping; Liu Yunqi; Zhu Daoben

2006-01-01

In the past years,organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs).In this review,we briefly summarize the current status of organic field-effect transistors including materials design,device physics,molecular electronics and the applications of carbon nanotubes in molecular electronics.Future prospects and investigations required to improve the OFET performance are also involved.

A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

Science.gov (United States)

She, Xiao-Jian; Gustafsson, David; Sirringhaus, Henning

2017-02-01

A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High Stability Pentacene Transistors Using Polymeric Dielectric Surface Modifier.

Science.gov (United States)

Wang, Xiaohong; Lin, Guangqing; Li, Peng; Lv, Guoqiang; Qiu, Longzhen; Ding, Yunsheng

2015-08-01

1,6-bis(trichlorosilyl)hexane (C6Cl), polystyrene (PS), and cross-linked polystyrene (CPS) were investigated as gate dielectric modified layers for high performance organic transistors. The influence of the surface energy, roughness and morphology on the charge transport of the organic thin-film transistors (OTFTs) was investigated. The surface energy and roughness both affect the grain size of the pentacene films which will control the charge carrier mobility of the devices. Pentacene thin-film transistors fabricated on the CPS modified dielectric layers exhibited charge carrier mobility as high as 1.11 cm2 V-1 s-1. The bias stress stability for the CPS devices shows that the drain current only decays 1% after 1530 s and the mobility never decreases until 13530 s.

Oxygen effect on the electrical characteristics of pentacene transistors

International Nuclear Information System (INIS)

Hu Yan; Dong Guifang; Hu Yuanchuan; Wang Liduo; Qiu Yong

2006-01-01

The effect of oxygen on the electrical characteristics of organic thin film transistors with pentacene as the active layer has been investigated. The saturation currents and mobilities of the transistors increase as the ambient oxygen concentration decreases, which is ascribed to the formation of a charge transfer complex between pentacene and O 2 . The deposition rate of the pentacene layer affects this phenomenon. The transistor with the pentacene layer deposited at a rate of 15 nm min -1 shows higher sensitivity to oxygen concentration than the device with the pentacene layer deposited at 30 nm min -1 . We suggest that when deposited at a lower rate the pentacene film is less compact, leading to easier entrance of oxygen into the charge accumulation region

Research of the voltage and current stabilization processes by using the silicon field-effect transistor

International Nuclear Information System (INIS)

Karimov, A.V.; Yodgorova, D.M.; Kamanov, B.M.; Giyasova, F.A.; Yakudov, A.A.

2012-01-01

The silicon field-effect transistors were investigated to use in circuits for stabilization of current and voltage. As in gallium arsenide field-effect transistors, in silicon field-effect transistors with p-n-junction a new mechanism of saturation of the drain current is experimentally found out due to both transverse and longitudinal compression of channel by additional resistance between the source and the gate of the transistor. The criteria for evaluating the coefficients of stabilization of transient current suppressors and voltage stabilizator based on the field-effect transistor are considered. (authors)

Organic field-effect transistors using single crystals

International Nuclear Information System (INIS)

Hasegawa, Tatsuo; Takeya, Jun

2009-01-01

Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. (topical review)

Circuit and method for controlling the threshold voltage of transistors.

NARCIS (Netherlands)

2008-01-01

A control unit, for controlling a threshold voltage of a circuit unit having transistor devices, includes a reference circuit and a measuring unit. The measuring unit is configured to measure a threshold voltage of at least one sensing transistor of the circuit unit, and to measure a threshold

Large-area WSe2 electric double layer transistors on a plastic substrate

KAUST Repository

Funahashi, Kazuma; Pu, Jiang; Li, Ming Yang; Li, Lain-Jong; Iwasa, Yoshihiro; Takenobu, Taishi

2015-01-01

Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.

Large-area WSe2 electric double layer transistors on a plastic substrate

KAUST Repository

Funahashi, Kazuma

2015-04-27

Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.

The next generation balloon-borne large aperture submillimeter telescope (BLAST-TNG)

Science.gov (United States)

Dober, Bradley Jerald

Large areas of astrophysics, such as precision cosmology, have benefited greatly from large maps and datasets, yielded by telescopes of ever-increasing number and ability. However, due to the unique challenges posed by submillimeter polarimetry, the study of molecular cloud dynamics and star formation remain stunted. Previously, polarimetry data was limited to a few vectors on only the brightest areas of molecular clouds. This made drawing statistically-driven conclusions a daunting task. However, the successful flight of the Balloon-born Large Aperture Submillimeter Telescope for Polarimetry (BLASTPol) generated maps with thousands of independent polarization measurements of molecular clouds, and ushered in a new era of empirical modeling of molecular cloud dynamics. Now that the potential benefits from large-scale maps of magnetic fields in molecular clouds had been identified, a successor that would truly unlock the secrets must be born. The Next Generation Balloon-borne Large Aperture Submillimeter Telescope (BLAST-TNG), the successor to BLASTPol, has the ability to make larger and more detailed maps of magnetic fields in molecular clouds. It will push the field of star formation into a statistics-driven, empirical realm. With these large, detailed datasets, astronomers will be able to find new relationships between the dust dynamics and the magnetic fields. The field will surge to a new level of understanding. One of the key enabling technologies of BLAST-TNG is its three arrays of polarization-sensitive Microwave Kinetic Inductance Detectors (MKIDs). MKIDs are superconducting RLC circuits with a resonant frequency that shifts proportionally to the amount of incident radiation. The key feature of MKIDs is that thousands of detectors, each with their own unique resonant frequency, can be coupled to the same readout line. This technology will be able to drive the production of large-scale monolithic arrays, containing tens or hundreds of thousands of detectors

Effect of 1MeV electron beam on transistors and circuits

International Nuclear Information System (INIS)

Lee, Tae Hoon

1998-02-01

It has been known that semiconductor devices operating in a radiation environment exhibited significant alterations of their electrical responses. Since an electron beam bombardment produces lattice damage in Si and charged defects in SiO 2 , several electrical parameters of transistors exhibit significant changes. Those parameters are the current gain of BJT (Bipolar Junction Transistor) and the threshold voltage of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The degradation of transistors brings about that of circuits. This paper presents the results of experiments and simulations performed to study the effects of 1MeV electron beam irradiation on selected silicon transistors and circuits. For BJTs, the current gains of npn (2N3904) and pnp (2N3906) linearly decreased as the irradiation dose increased, and from this result, the damage constants, Ks were obtained as 13.65 for 2N3904 and 22.52 for 2N3906 in MGy, indicating a more stable operation in the electron radiation environment for pnp than that for npn. The decrease of current gain was due to that of minority-carrier lifetime in the base region. For MOSFETs (CD4007s), the threshold voltages of NMOS and PMOS shifted to the lower values, which was resulted from the accumulation of charge in SiO 2 . The charges could be categorized into fixed oxide charge and interfacial trap charge. From experimental results, the amounts of the induced charges could be quantitatively estimated. These degradations of transistors brought about the decrease in the voltage gain of CE (Common Emitter) amplifier and the shifts in the inverting voltage of inverter. Additionally, PSpice simulations of these circuits were carried out by modeling of irradiated transistors. The comparison of simulation with experiment showed the relatively good agreement of simulation for the degradation of circuits after irradiation

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Science.gov (United States)

Liu, Yuan; Guo, Jian; Wu, Yecun; Zhu, Enbo; Weiss, Nathan O; He, Qiyuan; Wu, Hao; Cheng, Hung-Chieh; Xu, Yang; Shakir, Imran; Huang, Yu; Duan, Xiangfeng

2016-10-12

Two-dimensional semiconductors (2DSCs) such as molybdenum disulfide (MoS 2 ) have attracted intense interest as an alternative electronic material in the postsilicon era. However, the ON-current density achieved in 2DSC transistors to date is considerably lower than that of silicon devices, and it remains an open question whether 2DSC transistors can offer competitive performance. A high current device requires simultaneous minimization of the contact resistance and channel length, which is a nontrivial challenge for atomically thin 2DSCs, since the typical low contact resistance approaches for 2DSCs either degrade the electronic properties of the channel or are incompatible with the fabrication process for short channel devices. Here, we report a new approach toward high-performance MoS 2 transistors by using a physically assembled nanowire as a lift-off mask to create ultrashort channel devices with pristine MoS 2 channel and self-aligned low resistance metal/graphene hybrid contact. With the optimized contact in short channel devices, we demonstrate sub-100 nm MoS 2 transistor delivering a record high ON-current of 0.83 mA/μm at 300 K and 1.48 mA/μm at 20 K, which compares well with that of silicon devices. Our study, for the first time, demonstrates that the 2DSC transistors can offer comparable performance to the 2017 target for silicon transistors in International Technology Roadmap for Semiconductors (ITRS), marking an important milestone in 2DSC electronics.

The total dose effects on the 1/f noise of deep submicron CMOS transistors

International Nuclear Information System (INIS)

Hu Rongbin; Wang Yuxin; Lu Wu

2014-01-01

Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO 2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion. (semiconductor devices)

Schottky barrier diode embedded AlGaN/GaN switching transistor

International Nuclear Information System (INIS)

Park, Bong-Ryeol; Lee, Jung-Yeon; Lee, Jae-Gil; Lee, Dong-Myung; Cha, Ho-Young; Kim, Moon-Kyung

2013-01-01

We developed a Schottky barrier diode (SBD) embedded AlGaN/GaN switching transistor to allow negative current flow during off-state condition. An SBD was embedded in a recessed normally-off AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET). The fabricated device exhibited normally-off characteristics with a gate threshold voltage of 2.8 V, a diode turn-on voltage of 1.2 V, and a breakdown voltage of 849 V for the anode-to-drain distance of 8 µm. An on-resistance of 2.66 mΩcm 2 was achieved at a gate voltage of 16 V in the forward transistor mode. Eliminating the need for an external diode, the SBD embedded switching transistor has advantages of significant reduction in parasitic inductance and chip area. (paper)

Transistor design considerations for low-noise preamplifiers

International Nuclear Information System (INIS)

Fair, R.B.

1976-01-01

A review is presented of design considerations for GaAs Schottky-barrier FETs and other types of transistors in low-noise amplifiers for capacitive sources which are used in nuclear radiation detectors and high speed fiber-optic communication systems. Ultimate limits on performance are evaluated in terms of the g/sub m//C/sub i/ ratio and the gate leakage current to minimize the noise sources. Si bipolar transistors and the future prospects of GaAs, Si and InAs MISFETs are discussed, and performance is compared to FETs currently being used in low-noise preamplifiers

Total dose induced latch in short channel NMOS/SOI transistors

International Nuclear Information System (INIS)

Ferlet-Cavrois, V.; Quoizola, S.; Musseau, O.; Flament, O.; Leray, J.L.; Pelloie, J.L.; Raynaud, C.; Faynot, O.

1998-01-01

A latch effect induced by total dose irradiation is observed in short channel SOI transistors. This effect appears on NMOS transistors with either a fully or a partially depleted structure. It is characterized by a hysteresis behavior of the Id-Vg characteristics at high drain bias for a given critical dose. Above this dose, the authors still observe a limited leakage current at low drain bias (0.1 V), but a high conduction current at high drain bias (2 V) as the transistor should be in the off-state. The critical dose above which the latch appears strongly depends on gate length, transistor structure (fully or partially depleted), buried oxide thickness and supply voltage. Two-dimensional (2D) numerical simulations indicate that the parasitic condition is due to the latch of the back gate transistor triggered by charge trapping in the buried oxide. To avoid the latch induced by the floating body effect, different techniques can be used: doping engineering, body contacts, etc. The study of the main parameters influencing the latch (gate length, supply voltage) shows that the scaling of technologies does not necessarily imply an increased latch sensitivity. Some technological parameters like the buried oxide hardness and thickness can be used to avoid latch, even at high cumulated dose, on highly integrated SOI technologies

Superconducting Microwave Resonator Arrays for Submillimeter/Far-Infrared Imaging

Science.gov (United States)

Noroozian, Omid

Superconducting microwave resonators have the potential to revolutionize submillimeter and far-infrared astronomy, and with it our understanding of the universe. The field of low-temperature detector technology has reached a point where extremely sensitive devices like transition-edge sensors are now capable of detecting radiation limited by the background noise of the universe. However, the size of these detector arrays are limited to only a few thousand pixels. This is because of the cost and complexity of fabricating large-scale arrays of these detectors that can reach up to 10 lithographic levels on chip, and the complicated SQUID-based multiplexing circuitry and wiring for readout of each detector. In order to make substantial progress, next-generation ground-based telescopes such as CCAT or future space telescopes require focal planes with large-scale detector arrays of 104--10 6 pixels. Arrays using microwave kinetic inductance detectors (MKID) are a potential solution. These arrays can be easily made with a single layer of superconducting metal film deposited on a silicon substrate and pattered using conventional optical lithography. Furthermore, MKIDs are inherently multiplexable in the frequency domain, allowing ˜ 10 3 detectors to be read out using a single coaxial transmission line and cryogenic amplifier, drastically reducing cost and complexity. An MKID uses the change in the microwave surface impedance of a superconducting thin-film microresonator to detect photons. Absorption of photons in the superconductor breaks Cooper pairs into quasiparticles, changing the complex surface impedance, which results in a perturbation of resonator frequency and quality factor. For excitation and readout, the resonator is weakly coupled to a transmission line. The complex amplitude of a microwave probe signal tuned on-resonance and transmitted on the feedline past the resonator is perturbed as photons are absorbed in the superconductor. The perturbation can be

Towards realization of quantitative atmospheric and industrial gas sensing using THz wave electronics

Science.gov (United States)

Tekawade, Aniket; Rice, Timothy E.; Oehlschlaeger, Matthew A.; Mansha, Muhammad Waleed; Wu, Kefei; Hella, Mona M.; Wilke, Ingrid

2018-06-01

The potential of THz wave electronics for miniaturized non-intrusive sensors for atmospheric, environmental, and industrial gases is explored. A THz wave spectrometer is developed using a radio-frequency multiplier source and a Schottky-diode detector. Spectral absorption measurements were made in a gas cell within a frequency range of 220-330 GHz at room temperature and subatmospheric pressures. Measurements are reported for pure acetonitrile (CH3CN), methanol (CH3OH), and ethanol (C2H5OH) vapors at 5 and 10 Torr and for methanol dilute in the air (0.75-3.0 mol%) at a pressure of 500 Torr. An absorbance noise floor of 10-3 was achieved for a single 10 s scan of the 220-330 GHz frequency domain. Measured absorption spectra for methanol/air agree well at collisional-broadened conditions with spectral simulations carried out using literature spectroscopic parameters. In contrast to the previous submillimeter wave research that has focused on spectral absorbance at extremely low pressures (mTorr), where transitions are in the Doppler limit, and the present study illustrates the applicability of THz electronics for gas sensing at pressures approaching those found in atmospheric and industrial environments.

Noise characteristics of single-walled carbon nanotube network transistors

International Nuclear Information System (INIS)

Kim, Un Jeong; Kim, Kang Hyun; Kim, Kyu Tae; Min, Yo-Sep; Park, Wanjun

2008-01-01

The noise characteristics of randomly networked single-walled carbon nanotubes grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area and the large number of tube-tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the noise shows a similar level to that of a single single-walled carbon nanotube transistor. Detailed analysis is performed with the parameters of number of mobile carriers and mobility in the different environment. This shows that the change in the number of mobile carriers resulting in the mobility change due to adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube surface is a key factor in the 1/f noise level for carbon nanotube network transistors

Degenerate four-wave mixing and phase conjugation in a collisional plasma

International Nuclear Information System (INIS)

Federici, J.F.; Mansfield, D.K.

1986-06-01

Although degenerate four-wave mixing (DFWM) has many practical applications in the visible regime, no successful attempt has been made to study or demonstrate DFWM for wavelengths longer than 10μm. Recently, Steel and Lam established plasma as a viable DFWM and phase conjugation (PC) medium for infrared, far-infrared, and microwaves. However, their analysis is incomplete since collisional effects were not included. Using a fluid description, our results demonstrate that when collisional absorption is small and the collisional mean-free path is shorter than the nonlinear density grating scale length, collisional heating generates a thermal force which substantially enhances the phase conjugate reflectivity. When the collisional attenuation length becomes comparable to the length of the plasma, the dominant effect is collisional absorption of the pump waves. Numerical estimates of the phase conjugate reflectivity indicate that for modest power levels, gains greater than or equal to1 are possible in the submillimeter to centimeter wavelength range. This suggests that a plasma is a viable PC medium at those long wavelengths. In addition, doubly DFWM is discussed

A COMPREHENSIVE VIEW OF A STRONGLY LENSED PLANCK-ASSOCIATED SUBMILLIMETER GALAXY

Energy Technology Data Exchange (ETDEWEB)

Fu Hai; Cooray, A. [Department of Physics and Astronomy, University of California, Irvine, CA 92697 (United States); Jullo, E. [Observatoire d' Astrophysique de Marseille-Provence, 38 rue Frederic Joliot-Curie, F-13388 Marseille (France); Bussmann, R. S. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Ivison, R. J. [UK Astronomy Technology Centre, Royal Observatory, Edinburgh EH9 3HJ (United Kingdom); Perez-Fournon, I. [Instituto de Astrofisica de Canarias (IAC), E-38200 La Laguna, Tenerife (Spain); Djorgovski, S. G.; Scoville, N.; Yan, L.; Riechers, D. A.; Bradford, M. [Department of Astronomy, California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125 (United States); Aguirre, J. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104 (United States); Auld, R. [School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA (United Kingdom); Baes, M. [Sterrenkundig Observatorium, Universiteit Gent, Krijgslaan 281 S9, B-9000 Gent (Belgium); Baker, A. J. [Department of Physics and Astronomy, Rutgers, The State University of New Jersey, 136 Frelinghuysen Rd., Piscataway, NJ 08854 (United States); Cava, A. [Departamento de Astrofisica, Facultad de CC. Fisicas, Universidad Complutense de Madrid, E-28040 Madrid (Spain); Clements, D. L. [Astrophysics Group, Imperial College London, Blackett Laboratory, Prince Consort Road, London SW7 2AZ (United Kingdom); Dannerbauer, H. [Institut fuer Astronomie, Universitaet Wien, Tuerkenschanzstrasse 17, A-1160 Wien (Austria); Dariush, A. [Physics Department, Imperial College London, Prince Consort Road, London SW7 2AZ (United Kingdom); De Zotti, G., E-mail: haif@uci.edu [INAF-Osservatorio Astronomico di Padova, Vicolo dell' Osservatorio 5, I-35122 Padova (Italy); and others

2012-07-10

We present high-resolution maps of stars, dust, and molecular gas in a strongly lensed submillimeter galaxy (SMG) at z = 3.259. HATLAS J114637.9-001132 is selected from the Herschel-Astrophysical Terahertz Large Area Survey (H-ATLAS) as a strong lens candidate mainly based on its unusually high 500 {mu}m flux density ({approx}300 mJy). It is the only high-redshift Planck detection in the 130 deg{sup 2} H-ATLAS Phase-I area. Keck Adaptive Optics images reveal a quadruply imaged galaxy in the K band while the Submillimeter Array and the Jansky Very Large Array show doubly imaged 880 {mu}m and CO(1{yields}0) sources, indicating differentiated distributions of the various components in the galaxy. In the source plane, the stars reside in three major kpc-scale clumps extended over {approx}1.6 kpc, the dust in a compact ({approx}1 kpc) region {approx}3 kpc north of the stars, and the cold molecular gas in an extended ({approx}7 kpc) disk {approx}5 kpc northeast of the stars. The emissions from the stars, dust, and gas are magnified by {approx}17, {approx}8, and {approx}7 times, respectively, by four lensing galaxies at z {approx} 1. Intrinsically, the lensed galaxy is a warm (T{sub dust} {approx} 40-65 K), hyper-luminous (L{sub IR} {approx} 1.7 Multiplication-Sign 10{sup 13} L{sub Sun }; star formation rate (SFR) {approx}2000 M{sub Sun} yr{sup -1}), gas-rich (M{sub gas}/M{sub baryon} {approx} 70%), young (M{sub stellar}/SFR {approx} 20 Myr), and short-lived (M{sub gas}/SFR {approx} 40 Myr) starburst. With physical properties similar to unlensed z > 2 SMGs, HATLAS J114637.9-001132 offers a detailed view of a typical SMG through a powerful cosmic microscope.

Design Optimization of Transistors Used for Neural Recording

Directory of Open Access Journals (Sweden)

Eric Basham

2012-01-01

Full Text Available Neurons cultured directly over open-gate field-effect transistors result in a hybrid device, the neuron-FET. Neuron-FET amplifier circuits reported in the literature employ the neuron-FET transducer as a current-mode device in conjunction with a transimpedance amplifier. In this configuration, the transducer does not provide any signal gain, and characterization of the transducer out of the amplification circuit is required. Furthermore, the circuit requires a complex biasing scheme that must be retuned to compensate for drift. Here we present an alternative strategy based on the gm/Id design approach to optimize a single-stage common-source amplifier design. The gm/Id design approach facilitates in circuit characterization of the neuron-FET and provides insight into approaches to improving the transistor process design for application as a neuron-FET transducer. Simulation data for a test case demonstrates optimization of the transistor design and significant increase in gain over a current mode implementation.

Effect of Disorder on the Conductance of Spin Field Effect Transistors (SPINFET)

OpenAIRE

Cahay, M.; Bandyopadhyay, S.

2003-01-01

We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the amplitude and phase of the transistor's conductance oscillations to the location of a single impurity in the channel is reminiscent of the phenomenon of universal conductance fluctuations in mesoscopic samples and is extremely problematic as far as device imple...

Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

Energy Technology Data Exchange (ETDEWEB)

Curry, M. J. [Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); England, T. D.; Bishop, N. C.; Ten-Eyck, G.; Wendt, J. R.; Pluym, T.; Lilly, M. P.; Carroll, M. S. [Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); Carr, S. M. [Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States)

2015-05-18

We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

Graphene-graphite oxide field-effect transistors.

Science.gov (United States)

Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

2012-03-14

Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

Cylindrical-shaped nanotube field effect transistor

KAUST Repository

Hussain, Muhammad Mustafa; Fahad, Hossain M.; Smith, Casey E.; Rojas, Jhonathan Prieto

2015-01-01

A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

Cylindrical-shaped nanotube field effect transistor

KAUST Repository

Hussain, Muhammad Mustafa

2015-12-29

A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

High-mobility pyrene-based semiconductor for organic thin-film transistors.

Science.gov (United States)

Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

2013-05-01

Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

Wavy Architecture Thin-Film Transistor for Ultrahigh Resolution Flexible Displays

KAUST Repository

Hanna, Amir Nabil

2017-11-13

A novel wavy-shaped thin-film-transistor (TFT) architecture, capable of achieving 70% higher drive current per unit chip area when compared with planar conventional TFT architectures, is reported for flexible display application. The transistor, due to its atypical architecture, does not alter the turn-on voltage or the OFF current values, leading to higher performance without compromising static power consumption. The concept behind this architecture is expanding the transistor\\'s width vertically through grooved trenches in a structural layer deposited on a flexible substrate. Operation of zinc oxide (ZnO)-based TFTs is shown down to a bending radius of 5 mm with no degradation in the electrical performance or cracks in the gate stack. Finally, flexible low-power LEDs driven by the respective currents of the novel wavy, and conventional coplanar architectures are demonstrated, where the novel architecture is able to drive the LED at 2 × the output power, 3 versus 1.5 mW, which demonstrates the potential use for ultrahigh resolution displays in an area efficient manner.

Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process

Science.gov (United States)

Song, Ki-Whan; Lee, Yong Kyu; Sim, Jae Sung; Kim, Kyung Rok; Lee, Jong Duk; Park, Byung-Gook; You, Young Sub; Park, Joo-On; Jin, You Seung; Kim, Young-Wug

2005-04-01

We propose a complementary self-biasing method which enables the single-electron transistor (SET)/complementary metal-oxide semiconductor (CMOS) hybrid multi-valued logics (MVLs) to operate well at high temperatures, where the peak-to-valley current ratio (PVCR) of the Coulomb oscillation markedly decreases. The new architecture is implemented with a few transistors by utilizing the phase control capability of the sidewall depletion gates in dual-gate single-electron transistors (DGSETs). The suggested scheme is evaluated by a SPICE simulation with an analytical DGSET model. Furthermore, we have developed a new process technology for the SET/CMOS hybrid systems. We have confirmed that both of the fabricated devices, namely, SET and CMOS transistors, exhibit the ideal characteristics for the complementary self-biasing scheme: the SET shows clear Coulomb oscillations with a 100 mV period and the CMOS transistors show a high voltage gain.

Polarization sensitive detection of 100 GHz radiation by high mobility field-effect transistors

International Nuclear Information System (INIS)

Sakowicz, M.; Lusakowski, J.; Karpierz, K.; Grynberg, M.; Knap, W.; Gwarek, W.

2008-01-01

Detection of 100 GHz electromagnetic radiation by a GaAs/AlGaAs high electron mobility field-effect transistor was investigated at 300 K as a function of the angle α between the direction of linear polarization of the radiation and the symmetry axis of the transistor. The angular dependence of the detected signal was found to be A 0 cos 2 (α-α 0 )+C with A 0 , α 0 , and C dependent on the electrical polarization of the transistor gate. This dependence is interpreted as due to excitation of two crossed phase-shifted oscillators. A response of the transistor chip (including bonding wires and the substrate) to 100 GHz radiation was numerically simulated. Results of calculations confirmed experimentally observed dependencies and showed that the two oscillators result from an interplay of 100 GHz currents defined by the transistor impedance together with bonding wires and substrate related modes

Recent advances in understanding total-dose effects in bipolar transistors

International Nuclear Information System (INIS)

Schrimpf, R.D.

1996-01-01

Gain degradation in irradiated bipolar transistors can be a significant problem, particularly in linear integrated circuits. In many bipolar technologies, the degradation is greater for irradiation at low dose rates than it is for typical laboratory dose rates. Ionizing radiation causes the base current in bipolar transistors to increase, due to the presence of net positive charge in the oxides covering sensitive device areas and increases in surface recombination velocity. Understanding the mechanisms responsible for radiation-induced gain degradation in bipolar transistors is important in developing appropriate hardness assurance methods. This paper reviews recent modeling and experimental work, with the emphasis on low-dose-rate effects. A promising hardness assurance method based on irradiation at elevated temperatures is described

Submillimeter residual losses in high-T_c superconductors

Energy Technology Data Exchange (ETDEWEB)

Miller, David [Univ. of California, Berkeley, CA (United States)

1993-09-01

Bolometry was used obtain accurate submillimeter residual loss data for epitaxial films of YBa₂Cu₃O₇ (YBCO), Tl₂Ca₂Ba₂Cu₃O₁₀, Tl₂CaBa₂Cu₂O₈ (TCBCO), and Ba_0.6K_0.4BiO₃ (BKBO). We were able to fit the absorptivity measured for Nb films to an Eliashberg strong coupling calculation; excellent agreement resulted between parameters from best fits and measured Residual Resistivity Ratio. Microwave surface resistance measurements made on the same YBCO and TCBCO films are in excellent agreement with submillimeter measurements. Absorptivities for all YBCO films studied are qualitatively similar, increasing smoothly with frequency, with no gap-like features below the well known absorption edge at 450 cm^-1. Losses in YBCO films were fit to a weakly coupled grain model for the a-b plane conductivity. Strong phonon structure was observed in TCBCO films between 60 and 700 cm^-1 (2 THz and 23 THz); these losses could not be fitted to the simple weakly coupled grain model, in contrast to the case for other high-T_c superconductors where phonon structure observed in ceramics are is absent in epitaxial oriented films and crystals because of electronic screening due to high conductivity of a-b planes. Absorptivity data for the BKBO films all show a strong absorption onset near the BCS tunneling gap of 3.5 k_BT_c. Comparison with strong coupling Eliashberg predictions and of a Kramers-Kronig analysis indicate that the absorption onset is consistent with a superconducting energy gap. Effects of magnetic field on residual losses in YBCO films show a resonant absorption feature in vicinity of predicted

Report on the results of research and development under a consignment from NEDO on deca-nano quantum integrating transistor substrate technologies; 1997 nendo sangyo kagaku gijutsu kenkyu kaihatsu jigyo Shin energy Sangyo Gijutsu Sogo Kaihatsu Kiko itaku. Deca-nano ryoshi shusekika soshi kiban gijutsu no kenkyu kaihatsu seika hokokusho

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

Researches have been conducted on deca-nano quantum integrating transistor substrate technologies, and developments were made on a three-dimensional device simulator which can be used in deca-nano domains, and a circuit simulator to have quantifying function transistors coexist with silicon semiconductor integrated circuits. The researches were intended to develop a simulator capable of analyzing properties of very small silicon and compound semiconductor devices in deca-nano domains. The researches discussed the applicability of conventional simulators, calculated quantum levels in a three-dimensional hetero structure, and resulted in development of an electron wave propagation simulator in optional two-dimensional shapes, a quantum Monte Carlo simulator, and a three-dimensional semiconductor device simulator with quantum correction. On the other hand, in order to estimate characteristics of a hybrid circuit in which single electron transistors coexist with conventional transistors such as CMOS transistors, a single electron hybrid circuit simulator was developed. The development indicated that a CMOS-SET fused memory is promising as a future LSI memory. 22 refs., 116 figs., 3 tabs.

Theory and experiments on the generation of spontaneous emission using a plasma wave undulator

International Nuclear Information System (INIS)

Williams, R.L.; Clayton, C.E.; Joshi, C.; Katsouleas, T.; Mori, W.B.; Slater, J.

1990-01-01

This paper reports that, the authors are studying the feasibility of using relativistically moving plasma waves as short wavelength undulators for possible FEL and Compton scattering applications at UCLA. The remarkable property of such waves is that the wiggler parameter a w = eA/mc 2 can be on the order 0.1 while their wavelength λ w can be submillimeter. Such waves can be excited by either an intense electron bunch going through a plasma (plasma wake field) or a short but intense laser pulse going through the plasma (laser wake field). A variation of the laser wake field scheme is the plasm beat wave excitation. Here a moderately intense laser pulse containing two frequencies excites the plasm wave resonantly. Using a laser pulse containing 10.27 μm and 9.6 μm lines of the Co 2 laser that is approximately 400 ps (FWHM) and 200 GW of power, we were able to measure a w times the length product of 0.013 cm in our experiments. If a length of 0.75 cm i assumed, this implies an a w of 0.17 for a λ w ∼156 μm. Injection of an electron beam across such a plasma wave proved not to be feasible in these experiments, because the θ-pinch plasma source contained significant trapped magnetic fields. We are currently developing a field free plasma source which will permit transverse electron injection

BUSFET - A Novel Radiation-Hardened SOI Transistor

International Nuclear Information System (INIS)

Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

1999-01-01

The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, we propose a new partially-depleted SOI transistor structure that we call the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU and dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration and the depth of the source. 3-D simulations show that for a doping concentration of 10 18 cm -3 and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3x10 17 cm -3 , a thicker silicon film (300 nm) must be used

Organic field-effect transistors using single crystals

Directory of Open Access Journals (Sweden)

Tatsuo Hasegawa and Jun Takeya

2009-01-01

Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

A pattern recognition approach to transistor array parameter variance

Science.gov (United States)

da F. Costa, Luciano; Silva, Filipi N.; Comin, Cesar H.

2018-06-01

The properties of semiconductor devices, including bipolar junction transistors (BJTs), are known to vary substantially in terms of their parameters. In this work, an experimental approach, including pattern recognition concepts and methods such as principal component analysis (PCA) and linear discriminant analysis (LDA), was used to experimentally investigate the variation among BJTs belonging to integrated circuits known as transistor arrays. It was shown that a good deal of the devices variance can be captured using only two PCA axes. It was also verified that, though substantially small variation of parameters is observed for BJT from the same array, larger variation arises between BJTs from distinct arrays, suggesting the consideration of device characteristics in more critical analog designs. As a consequence of its supervised nature, LDA was able to provide a substantial separation of the BJT into clusters, corresponding to each transistor array. In addition, the LDA mapping into two dimensions revealed a clear relationship between the considered measurements. Interestingly, a specific mapping suggested by the PCA, involving the total harmonic distortion variation expressed in terms of the average voltage gain, yielded an even better separation between the transistor array clusters. All in all, this work yielded interesting results from both semiconductor engineering and pattern recognition perspectives.

Logarithmic unification from symmetries enhanced in the sub-millimeter infrared

International Nuclear Information System (INIS)

Arkani-Hamed, Nima; Dimopoulos, Savas; March-Russell, John

1999-01-01

In theories with TeV string scale and sub-millimeter extra dimensions the attractive picture of logarithmic gauge coupling unification at 10 16 GeV is seemingly destroyed. In this paper we argue to the contrary that logarithmic unification can occur in such theories. The rationale for unification is no longer that a gauge symmetry is restored at short distances, but rather that a geometric symmetry is restored at large distances in the bulk away from our 3-brane. The apparent ''running'' of the gauge couplings to energies far above the string scale actually arises from the logarithmic variation of classical fields in (sets of) two large transverse dimensions. We present a number of N = 2 and N = 1 supersymmetric D-brane constructions illustrating this picture for unification

Combinatorial study of zinc tin oxide thin-film transistors

Science.gov (United States)

McDowell, M. G.; Sanderson, R. J.; Hill, I. G.

2008-01-01

Groups of thin-film transistors using a zinc tin oxide semiconductor layer have been fabricated via a combinatorial rf sputtering technique. The ZnO :SnO2 ratio of the film varies as a function of position on the sample, from pure ZnO to SnO2, allowing for a study of zinc tin oxide transistor performance as a function of channel stoichiometry. The devices were found to have mobilities ranging from 2to12cm2/Vs, with two peaks in mobility in devices at ZnO fractions of 0.80±0.03 and 0.25±0.05, and on/off ratios as high as 107. Transistors composed predominantly of SnO2 were found to exhibit light sensitivity which affected both the on/off ratios and threshold voltages of these devices.

Graphene Field Effect Transistor for Radiation Detection

Science.gov (United States)

Li, Mary J. (Inventor); Chen, Zhihong (Inventor)

2016-01-01

The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

Deformable Organic Nanowire Field-Effect Transistors.

Science.gov (United States)

Lee, Yeongjun; Oh, Jin Young; Kim, Taeho Roy; Gu, Xiaodan; Kim, Yeongin; Wang, Ging-Ji Nathan; Wu, Hung-Chin; Pfattner, Raphael; To, John W F; Katsumata, Toru; Son, Donghee; Kang, Jiheong; Matthews, James R; Niu, Weijun; He, Mingqian; Sinclair, Robert; Cui, Yi; Tok, Jeffery B-H; Lee, Tae-Woo; Bao, Zhenan

2018-02-01

Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next-generation implantable bioelectronic devices. Here, deformable field-effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high-molecular-weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field-effect mobility >8 cm 2 V -1 s -1 with poly(vinylidenefluoride-co-trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine-like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min -1 (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Proton migration mechanism for the instability of organic field-effect transistors

NARCIS (Netherlands)

Sharma, A.; Mathijssen, S.G.J.; Kemerink, M.; Leeuw, de D.M.; Bobbert, P.A.

2009-01-01

During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based on

The CCAT-prime Extreme Field-of-View Submillimeter Telescope on Cerro Chajnantor

Science.gov (United States)

Koopman, Brian; Bertoldi, Frank; Chapman, Scott; Fich, Michel; Giovanelli, Riccardo; Haynes, Martha P.; Herter, Terry L.; Murray, Norman W.; Niemack, Michael D.; Riechers, Dominik; Schilke, Peter; Stacey, Gordon J.; Stutzki, Juergen; CCAT-prime Collaboration

2017-01-01

CCAT-prime is a six meter aperture off-axis submillimeter telescope that we plan to build at 5600m elevation on Cerro Chajnantor in Chile. The CCAT-prime optics are based on a cross-Dragone design with high throughput and a wide field-of-view optimized to increase the mapping speed of next generation cosmic microwave background (CMB) observations. These characteristics make CCAT-prime an excellent platform for a wide range of next generation millimeter and submillimeter science goals, and a potential platform for CMB stage-IV measurements. Here we present the telescope design for CCAT-prime and review the science goals.Taking advantage of the high elevation site, the first generation instrument for CCAT-prime will measure seven different frequency bands from 350um to 3mm. These seven bands will enable precise measurements of the Sunyaev-Zel’dovich effects (SZE) by separating contributions from CMB, thermal SZE, kinetic SZE, bright submm galaxies, and radio sources with a goal of extracting the peculiar velocities from a large number of galaxy clusters. Additional science priorities for CCAT-prime include: Galactic Ecology studies of the dynamic intersteller medium by mapping the fine structure lines [CI], [CII] and [NII] as well as high-excitation CO lines at the shortest wavelength bands; high redshift intensity mapping of [CII] emission from star-forming galaxies that likely dominates cosmic reionization at z~5-9 to probe the Epoch of Reionization; and next generation CMB polarization measurements to constrain inflation and cosmological models. The CCAT-prime facility will further our understanding of astrophysical processes from moments after the Big Bang to the present-day evolution of the Milky Way.

Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.

Science.gov (United States)

Penumatcha, Ashish V; Salazar, Ramon B; Appenzeller, Joerg

2015-11-13

Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

Hybrid light emitting transistors (Presentation Recording)

Science.gov (United States)

Muhieddine, Khalid; Ullah, Mujeeb; Namdas, Ebinazar B.; Burn, Paul L.

2015-10-01

Organic light-emitting diodes (OLEDs) are well studied and established in current display applications. Light-emitting transistors (LETs) have been developed to further simplify the necessary circuitry for these applications, combining the switching capabilities of a transistor with the light emitting capabilities of an OLED. Such devices have been studied using mono- and bilayer geometries and a variety of polymers [1], small organic molecules [2] and single crystals [3] within the active layers. Current devices can often suffer from low carrier mobilities and most operate in p-type mode due to a lack of suitable n-type organic charge carrier materials. Hybrid light-emitting transistors (HLETs) are a logical step to improve device performance by harnessing the charge carrier capabilities of inorganic semiconductors [4]. We present state of the art, all solution processed hybrid light-emitting transistors using a non-planar contact geometry [1, 5]. We will discuss HLETs comprised of an inorganic electron transport layer prepared from a sol-gel of zinc tin oxide and several organic emissive materials. The mobility of the devices is found between 1-5 cm2/Vs and they had on/off ratios of ~105. Combined with optical brightness and efficiencies of the order of 103 cd/m2 and 10-3-10-1 %, respectively, these devices are moving towards the performance required for application in displays. [1] M. Ullah, K. Tandy, S. D. Yambem, M. Aljada, P. L. Burn, P. Meredith, E. B. Namdas., Adv. Mater. 2013, 25, 53, 6213 [2] R. Capelli, S. Toffanin, G. Generali, H. Usta, A. Facchetti, M. Muccini, Nature Materials 2010, 9, 496 [3] T. Takenobu, S. Z. Bisri, T. Takahashi, M. Yahiro, C. Adachi, Y. Iwasa, Phys. Rev. Lett. 2008, 100, 066601 [4] H. Nakanotani, M. Yahiro, C. Adachi, K. Yano, Appl. Phys. Lett. 2007, 90, 262104 [5] K. Muhieddine, M. Ullah, B. N. Pal, P. Burn E. B. Namdas, Adv. Mater. 2014, 26,37, 6410

Radiation induced deep level defects in bipolar junction transistors under various bias conditions

International Nuclear Information System (INIS)

Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

2015-01-01

Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

Low-power bacteriorhodopsin-silicon n-channel metal-oxide field-effect transistor photoreceiver.

Science.gov (United States)

Shin, Jonghyun; Bhattacharya, Pallab; Yuan, Hao-Chih; Ma, Zhenqiang; Váró, György

2007-03-01

A bacteriorhodopsin (bR)-silicon n-channel metal-oxide field-effect transistor (NMOSFET) monolithically integrated photoreceiver is demonstrated. The bR film is selectively formed on an external gate electrode of the transistor by electrophoretic deposition. A modified biasing circuit is incorporated, which helps to match the resistance of the bR film to the input impedance of the NMOSFET and to shift the operating point of the transistor to coincide with the maximum gain. The photoreceiver exhibits a responsivity of 4.7 mA/W.

Validation of Nonlinear Bipolar Transistor Model by Small-Signal Measurements

DEFF Research Database (Denmark)

Vidkjær, Jens; Porra, V.; Zhu, J.

1992-01-01

A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis...... results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor....

AzTEC on ASTE Survey of Submillimeter Galaxies

Science.gov (United States)

Kohno, K.; Tamura, Y.; Hatsukade, B.; Nakanishi, K.; Iono, D.; Takata, T.; Wilson, G. W.; Yun, M. S.; Perera, T.; Austermann, J. E.; Scott, K. S.; Hughes, H.; Aretxaga, I.; Tanaka, K.; Oshima, T.; Yamaguchi, N.; Matsuo, H.; Ezawa, H.; Kawabe, R.

2008-10-01

We have conducted an unprecedented survey of submillimeter galaxies (SMGs) using the 144 pixel bolometer camera AzTEC mounted on the ASTE 10-m dish in Chile. We have already obtained many (>20) wide (typically 12' × 12' or wider) and deep (1 σ sensitivity of 0.5-1.0 mJy) 1.1 mm continuum images of known blank fields and over-density regions/protoclusters across a wide range of redshifts with a spatial resolution of ˜ 30''. It has resulted in the numerous (˜ a few 100, almost equivalent to the total number of the previously known SMGs) new and secure detections of SMGs. In this paper, we present initial results of two selected fields, SSA 22 and AKARI Deep Field South (ADF-S). A significnat clustering of bright SMGs toward the density peak of LAEs is found in SSA 22. We derived the differential and cumulative number counts from the detected sources in ADF-S, which probe the faintest flux densities (down to ˜1 mJy) among 1-mm blank field surveys to date.

Principles of an atomtronic transistor

International Nuclear Information System (INIS)

Caliga, Seth C; Anderson, Dana Z; Straatsma, Cameron J E; Zozulya, Alex A

2016-01-01

A semiclassical formalism is used to investigate the transistor-like behavior of ultracold atoms in a triple-well potential. Atom current flows from the source well, held at fixed chemical potential and temperature, into an empty drain well. In steady-state, the gate well located between the source and drain is shown to acquire a well-defined chemical potential and temperature, which are controlled by the relative height of the barriers separating the three wells. It is shown that the gate chemical potential can exceed that of the source and have a lower temperature. In electronics terminology, the source–gate junction can be reverse-biased. As a result, the device exhibits regimes of negative resistance and transresistance, indicating the presence of gain. Given an external current input to the gate, transistor-like behavior is characterized both in terms of the current gain, which can be greater than unity, and the power output of the device. (paper)

Direct observation of single-charge-detection capability of nanowire field-effect transistors.

Science.gov (United States)

Salfi, J; Savelyev, I G; Blumin, M; Nair, S V; Ruda, H E

2010-10-01

A single localized charge can quench the luminescence of a semiconductor nanowire, but relatively little is known about the effect of single charges on the conductance of the nanowire. In one-dimensional nanostructures embedded in a material with a low dielectric permittivity, the Coulomb interaction and excitonic binding energy are much larger than the corresponding values when embedded in a material with the same dielectric permittivity. The stronger Coulomb interaction is also predicted to limit the carrier mobility in nanowires. Here, we experimentally isolate and study the effect of individual localized electrons on carrier transport in InAs nanowire field-effect transistors, and extract the equivalent charge sensitivity. In the low carrier density regime, the electrostatic potential produced by one electron can create an insulating weak link in an otherwise conducting nanowire field-effect transistor, modulating its conductance by as much as 4,200% at 31 K. The equivalent charge sensitivity, 4 × 10(-5) e Hz(-1/2) at 25 K and 6 × 10(-5) e Hz(-1/2) at 198 K, is orders of magnitude better than conventional field-effect transistors and nanoelectromechanical systems, and is just a factor of 20-30 away from the record sensitivity for state-of-the-art single-electron transistors operating below 4 K (ref. 8). This work demonstrates the feasibility of nanowire-based single-electron memories and illustrates a physical process of potential relevance for high performance chemical sensors. The charge-state-detection capability we demonstrate also makes the nanowire field-effect transistor a promising host system for impurities (which may be introduced intentionally or unintentionally) with potentially long spin lifetimes, because such transistors offer more sensitive spin-to-charge conversion readout than schemes based on conventional field-effect transistors.

Large signal S-parameters: modeling and radiation effects in microwave power transistors

International Nuclear Information System (INIS)

Graham, E.D. Jr.; Chaffin, R.J.; Gwyn, C.W.

1973-01-01

Microwave power transistors are usually characterized by measuring the source and load impedances, efficiency, and power output at a specified frequency and bias condition in a tuned circuit. These measurements provide limited data for circuit design and yield essentially no information concerning broadbanding possibilities. Recently, a method using large signal S-parameters has been developed which provides a rapid and repeatable means for measuring microwave power transistor parameters. These large signal S-parameters have been successfully used to design rf power amplifiers. Attempts at modeling rf power transistors have in the past been restricted to a modified Ebers-Moll procedure with numerous adjustable model parameters. The modified Ebers-Moll model is further complicated by inclusion of package parasitics. In the present paper an exact one-dimensional device analysis code has been used to model the performance of the transistor chip. This code has been integrated into the SCEPTRE circuit analysis code such that chip, package and circuit performance can be coupled together in the analysis. Using []his computational tool, rf transistor performance has been examined with particular attention given to the theoretical validity of large-signal S-parameters and the effects of nuclear radiation on device parameters. (auth)

High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

KAUST Repository

Torres, Carlos M.

2015-12-09

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

High-Current Gain Two-Dimensional MoS 2 -Base Hot-Electron Transistors

KAUST Repository

Torres, Carlos M.; Lan, Yann Wen; Zeng, Caifu; Chen, Jyun Hong; Kou, Xufeng; Navabi, Aryan; Tang, Jianshi; Montazeri, Mohammad; Adleman, James R.; Lerner, Mitchell B.; Zhong, Yuan Liang; Li, Lain-Jong; Chen, Chii Dong; Wang, Kang L.

2015-01-01

The vertical transport of nonequilibrium charge carriers through semiconductor heterostructures has led to milestones in electronics with the development of the hot-electron transistor. Recently, significant advances have been made with atomically sharp heterostructures implementing various two-dimensional materials. Although graphene-base hot-electron transistors show great promise for electronic switching at high frequencies, they are limited by their low current gain. Here we show that, by choosing MoS2 and HfO2 for the filter barrier interface and using a noncrystalline semiconductor such as ITO for the collector, we can achieve an unprecedentedly high-current gain (α ∼ 0.95) in our hot-electron transistors operating at room temperature. Furthermore, the current gain can be tuned over 2 orders of magnitude with the collector-base voltage albeit this feature currently presents a drawback in the transistor performance metrics such as poor output resistance and poor intrinsic voltage gain. We anticipate our transistors will pave the way toward the realization of novel flexible 2D material-based high-density, low-energy, and high-frequency hot-carrier electronic applications. © 2015 American Chemical Society.

Laser-Printed Organic Thin-Film Transistors

KAUST Repository

Diemer, Peter J.; Harper, Angela F.; Niazi, Muhammad Rizwan; Petty, Anthony J.; Anthony, John E.; Amassian, Aram; Jurchescu, Oana D.

2017-01-01

their incorporation in large-scale manufacturing processes. Here, the first ever organic thin-film transistor fabricated with an electrophotographic laser printing process using a standard office laser printer is reported. This completely solvent-free additive

Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors.

Science.gov (United States)

Chen, Haitian; Cao, Yu; Zhang, Jialu; Zhou, Chongwu

2014-06-13

Carbon nanotubes and metal oxide semiconductors have emerged as important materials for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated macroelectronics operating in complementary mode has been challenging due to the difficulty in making n-type carbon nanotube transistors and p-type metal oxide transistors. Here we report a hybrid integration of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors to achieve large-scale (>1,000 transistors for 501-stage ring oscillators) complementary macroelectronic circuits on both rigid and flexible substrates. This approach of hybrid integration allows us to combine the strength of p-type carbon nanotube and n-type indium-gallium-zinc-oxide thin-film transistors, and offers high device yield and low device variation. Based on this approach, we report the successful demonstration of various logic gates (inverter, NAND and NOR gates), ring oscillators (from 51 stages to 501 stages) and dynamic logic circuits (dynamic inverter, NAND and NOR gates).

High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Cao, Yu; Che, Yuchi; Zhou, Chongwu, E-mail: chongwuz@usc.edu [Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States); Seo, Jung-Woo T.; Hersam, Mark C. [Department of Materials Science and Engineering and Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Gui, Hui [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States)

2016-06-06

In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of ∼1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 μS/μm and desirable drain current saturation with an output resistance of ∼100 KΩ μm. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailored diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics.

Self-standing chitosan films as dielectrics in organic thin-film transistors

Directory of Open Access Journals (Sweden)

J. Morgado

2013-12-01

Full Text Available Organic thin film transistors, using self-standing 50 µm thick chitosan films as dielectric, are fabricated using sublimed pentacene or two conjugated polymers deposited by spin coating as semiconductors. Field-effect mobilities are found to be similar to values obtained with other dielectrics and, in the case of pentacene, a value (0.13 cm2/(V•s comparable to high performing transistors was determined. In spite of the low On/Off ratios (a maximum value of 600 was obtained for the pentacene-based transistors, these are promising results for the area of sustainable organic electronics in general and for biocompatible electronics in particular.

All-Metallic Vertical Transistors Based on Stacked Dirac Materials

OpenAIRE

Wang, Yangyang; Ni, Zeyuan; Liu, Qihang; Quhe, Ruge; Zheng, Jiaxin; Ye, Meng; Yu, Dapeng; Shi, Junjie; Yang, Jinbo; Lu, Jing

2014-01-01

It is an ongoing pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac ...

Imaging the environment of a z = 6.3 submillimeter galaxy with SCUBA-2

International Nuclear Information System (INIS)

Robson, E. I.; Holland, W. S.; Ivison, R. J.; Smail, Ian; Geach, J. E.; Gibb, A. G.; Riechers, D.; Ade, P. A. R.; Bintley, D.; Bock, J.; Chapin, E. L.; Chapman, S. C.; Clements, D. L.; Conley, A.; Cooray, A.; Dunlop, J. S.; Farrah, D.

2014-01-01

We describe a search for submillimeter emission in the vicinity of one of the most distant, luminous galaxies known, HerMES FLS3, at z = 6.34, exploiting it as a signpost to a potentially biased region of the early universe, as might be expected in hierarchical structure formation models. Imaging to the confusion limit with the innovative, wide-field submillimeter bolometer camera, SCUBA-2, we are sensitive to colder and/or less luminous galaxies in the surroundings of HFLS3. We use the Millennium Simulation to illustrate that HFLS3 may be expected to have companions if it is as massive as claimed, but find no significant evidence from the surface density of SCUBA-2 galaxies in its vicinity, or their colors, that HFLS3 marks an overdensity of dusty, star-forming galaxies. We cannot rule out the presence of dusty neighbors with confidence, but deeper 450 μm imaging has the potential to more tightly constrain the redshifts of nearby galaxies, at least one of which likely lies at z ≳ 5. If associations with HFLS3 can be ruled out, this could be taken as evidence that HFLS3 is less biased than a simple extrapolation of the Millennium Simulation may imply. This could suggest either that it represents a rare short-lived, but highly luminous, phase in the evolution of an otherwise typical galaxy, or that this system has suffered amplification due to a foreground gravitational lens and so is not as intrinsically luminous as claimed.

Imaging the environment of a z = 6.3 submillimeter galaxy with SCUBA-2

Energy Technology Data Exchange (ETDEWEB)

Robson, E. I.; Holland, W. S. [United Kingdom Astronomy Technology Centre, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Ivison, R. J. [European Space Observatory, Karl Schwarzschild Strasse 2, D-85748 Garching (Germany); Smail, Ian [Institute for Computational Cosmology, Durham University, South Road, Durham DH1 3LE (United Kingdom); Geach, J. E. [Centre for Astrophysics Research, University of Hertfordshire, Hatfield AL10 9AB (United Kingdom); Gibb, A. G. [Department of Physics and Astronomy, University of British Columbia, 6224 Agricultural Road, Vancouver, BC V6T 1Z1 (Canada); Riechers, D. [Astronomy Department, Cornell University, Ithaca, NY 14853 (United States); Ade, P. A. R. [Astronomy and Instrumentation Group, Cardiff University, Cardiff, Wales CF10 3XQ (United Kingdom); Bintley, D. [Joint Astronomy Centre, 660 North Ahoku Place, University Park, Hilo, HI 96720 (United States); Bock, J. [Jet Propulsion Laboratory, National Aeronautics and Space Administration, Pasadena, CA 91109 (United States); Chapin, E. L. [XMM-Newton Science Operations Centre, European Space Astronomy Centre, Apartado 79, E-28691 Villaneueva de la Canada, Madrid (Spain); Chapman, S. C. [Department of Physics and Atmospheric Science, Dalhousie University, Coburg Road, Halifax B3H 1A6 (Canada); Clements, D. L. [Astrophysics Group, Imperial College London, Blackett Laboratory, Prince Consort Road, London SW7 2AZ (United Kingdom); Conley, A. [Center for Astrophysics and Space Astronomy, 389 UCB, University of Colorado, Boulder, CO 80309 (United States); Cooray, A. [Department of Physics and Astronomy, University of California, Irvine, CA 92697 (United States); Dunlop, J. S. [Institute for Astronomy, University of Edinburgh, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Farrah, D., E-mail: rob.ivison@gmail.com [Department of Physics, Virginia Tech, Blacksburg, VA 24061 (United States); and others

2014-09-20

We describe a search for submillimeter emission in the vicinity of one of the most distant, luminous galaxies known, HerMES FLS3, at z = 6.34, exploiting it as a signpost to a potentially biased region of the early universe, as might be expected in hierarchical structure formation models. Imaging to the confusion limit with the innovative, wide-field submillimeter bolometer camera, SCUBA-2, we are sensitive to colder and/or less luminous galaxies in the surroundings of HFLS3. We use the Millennium Simulation to illustrate that HFLS3 may be expected to have companions if it is as massive as claimed, but find no significant evidence from the surface density of SCUBA-2 galaxies in its vicinity, or their colors, that HFLS3 marks an overdensity of dusty, star-forming galaxies. We cannot rule out the presence of dusty neighbors with confidence, but deeper 450 μm imaging has the potential to more tightly constrain the redshifts of nearby galaxies, at least one of which likely lies at z ≳ 5. If associations with HFLS3 can be ruled out, this could be taken as evidence that HFLS3 is less biased than a simple extrapolation of the Millennium Simulation may imply. This could suggest either that it represents a rare short-lived, but highly luminous, phase in the evolution of an otherwise typical galaxy, or that this system has suffered amplification due to a foreground gravitational lens and so is not as intrinsically luminous as claimed.

Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.

Science.gov (United States)

Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

2014-05-07

Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.

Electric double layer transistors with ferroelectric BaTiO3 channels

NARCIS (Netherlands)

Ito, M.; Matsubara, Y.; Kozuka, Y.; Takahashi, K. S.; Kagawa, F.; Ye, J. T.; Iwasa, Y.; Ueno, K.; Tokura, Y.; Kawasaki, M.

2014-01-01

We report the surface conduction of a BaTiO3 thin film using electric double layer transistor (EDLT) structure. A transistor operation was observed at 220 K with an on/off ratio exceeding 10(5), demonstrating that ionic liquid gating is effective to induce carriers at the surface of ferroelectric

E-Learning System for Design and Construction of Amplifier Using Transistors

Science.gov (United States)

Takemura, Atsushi

2014-01-01

This paper proposes a novel e-Learning system for the comprehensive understanding of electronic circuits with transistors. The proposed e-Learning system allows users to learn a wide range of topics, encompassing circuit theories, design, construction, and measurement. Given the fact that the amplifiers with transistors are an integral part of…

THE SCUBA-2 COSMOLOGY LEGACY SURVEY: ALMA RESOLVES THE REST-FRAME FAR-INFRARED EMISSION OF SUB-MILLIMETER GALAXIES

Energy Technology Data Exchange (ETDEWEB)

Simpson, J. M.; Smail, Ian; Swinbank, A. M.; Chen, Chian-Chou; Danielson, A. L. R.; Edge, A. C.; Ma, C.-J. [Institute for Computational Cosmology, Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Almaini, O.; Conselice, C.; Hartley, W. G.; Lani, C. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Blain, A. W. [Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Bremer, M. N.; Coppin, K. E. K. [School of Physics, HH Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Chapman, S. C. [Department of Physics and Atmospheric Science, Dalhousie University, Halifax, NS B3H 3J5 (Canada); Dunlop, J. S.; Ivison, R. J. [Institute for Astronomy, University of Edinburgh, Royal Observatory, Blackford HIll, Edinburgh EH9 3HJ (United Kingdom); Farrah, D. [Department of Physics, Virginia Tech, Blacksburg, VA 24061 (United States); Geach, J. E. [Centre for Astrophysics Research, Science and Technology Research Institute, University of Hertfordshire, Hatfield AL10 9AB (United Kingdom); Karim, A., E-mail: j.m.simpson@dur.ac.uk [Argelander-Institute for Astronomy, Bonn University, Auf dem Hügel 71, D-53121 Bonn (Germany); and others

2015-01-20

We present high-resolution (0.''3) Atacama Large Millimeter Array 870 μm imaging of 52 sub-millimeter galaxies (SMGs) in the Ultra Deep Survey field to investigate the size and morphology of the sub-millimeter (sub-mm) emission on 2-10 kpc scales. We derive a median intrinsic angular size of FWHM = 0.''30 ± 0.''04 for the 23 SMGs in the sample detected at a signal-to-noise ratio (S/N) >10. Using the photometric redshifts of the SMGs we show that this corresponds to a median physical half-light diameter of 2.4 ± 0.2 kpc. A stacking analysis of the SMGs detected at S/N <10 shows they have sizes consistent with the 870 μm bright SMGs in the sample. We compare our results to the sizes of SMGs derived from other multi-wavelength studies, and show that the rest-frame ∼250 μm sizes of SMGs are consistent with studies of resolved {sup 12}CO (J = 3-2 to 7-6) emission lines, but that sizes derived from 1.4 GHz imaging appear to be approximately two times larger on average, which we attribute to cosmic ray diffusion. The rest-frame optical sizes of SMGs are around four times larger than the sub-millimeter sizes, indicating that the star formation in these galaxies is compact relative to the pre-existing stellar distribution. The size of the starburst region in SMGs is consistent with the majority of the star formation occurring in a central region, a few kiloparsecs in extent, with a median star formation rate surface density of 90 ± 30 M {sub ☉} yr{sup –1} kpc{sup –2}, which may suggest that we are witnessing an intense period of bulge growth in these galaxies.

PHYSICAL PROPERTIES AND MORPHOLOGY OF A NEWLY IDENTIFIED COMPACT z = 4.04 LENSED SUBMILLIMETER GALAXY IN ABELL 2218

International Nuclear Information System (INIS)

Knudsen, Kirsten K.; Kneib, Jean-Paul; Richard, Johan; Petitpas, Glen; Egami, Eiichi

2010-01-01

We present the identification of a bright submillimeter (submm) source, SMM J163555.5+661300, detected in the lensing cluster Abell 2218, for which we have accurately determined the position using observations from the Submillimeter Array (SMA). The identified optical counterpart has a spectroscopic redshift of z = 4.044 ± 0.001 if we attribute the single emission line detected at λ = 6140 A to Lyα. This redshift identification is in good agreement with the optical/near-infrared photometric redshift as well as the submm flux ratio S 450 /S 850 ∼ 1.6, the radio-submm flux ratio S 1.4 /S 850 24 /S 850 12 L sun , which implies a star formation rate (SFR) of 230 M sun yr -1 . This makes it the lowest-luminosity submillimeter galaxy (SMG) known at z>4 to date. Previous CO(4-3) emission line observations yielded a non-detection, for which we derived an upper limit of the CO line luminosity of L CO ' = 0.3x10 10 K km s -1 pc -2 , which is not inconsistent with the L ' CO -L FIR relation for starburst galaxies. The best-fit model to the optical and near-infrared photometry give a stellar population with an age of 1.4 Gyr and a stellar mass of 1.6 x 10 10 M sun . The optical morphology is compact and in the source plane the galaxy has an extent of ∼6 x 3 kpc with individual star-forming knots of sun yr -1 kpc 2 . The redshift of J163556 extends the redshift distribution of faint, lensed SMGs, and we find no evidence that these have a different redshift distribution than bright SMGs.

MOSFET-based high voltage double square-wave pulse generator with an inductive adder configuration

Energy Technology Data Exchange (ETDEWEB)

Zhao, Xin [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); Zhang, Qiaogen, E-mail: hvzhang@mail.xjtu.edu.cn [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); Long, Jinghua [College of Physics, Shenzhen University, Shenzhen 518060 (China); Lei, Yunfei; Liu, Jinyuan [Institute of Optoelectronics, Shenzhen University, Shenzhen 518060 (China)

2015-09-01

This paper presents a fast MOSFET-based solid-state pulse generator for high voltage double square-wave pulses. The generator consists mainly of an inductive adder system stacked of 20 solid-state modules. Each of the modules has 18 power MOSFETs in parallel, which are triggered by individual drive circuits; these drive circuits themselves are synchronously triggered by a signal from avalanche transistors. Our experiments demonstrate that the output pulses with amplitude of 8.1 kV and peak current of about 405 A are available at a load impedance of 20 Ω. The pulse has a double square-wave form with a rise and fall time of 40 ns and 26 ns, respectively and bottom flatness better than 12%. The interval time of the double square-wave pulses can be adjustable by varying the interval time of the trigger pulses.

A 547 GHz SIS Receiver Employing a Submicron Nb Junction with an Integrated Matching Circuit

Science.gov (United States)

Febvre, P.; McGrath, W.; Leduc, H.; Batelaan, P.; Frerking, M.; Hernichel, J.; Bumble, B.

1993-01-01

The most sensitive heterodyne receivers used for millimeter wave and submillimeter wave radioastronomy employ superconductor-insulator-superconductor (SIS) tunnel junctions as the nonlinear mixing element.

Reevaluating the worst-case radiation response of MOS transistors

Science.gov (United States)

Fleetwood, D. M.

Predicting worst-case response of a semiconductor device to ionizing radiation is a formidable challenge. As processes change and MOS gate insulators become thinner in advanced VLSI and VHSIC technologies, failure mechanisms must be constantly re-examined. Results are presented of a recent study in which more than 100 MOS transistors were monitored for up to 300 days after Co-60 exposure. Based on these results, a reevaluation of worst-case n-channel transistor response (most positive threshold voltage shift) in low-dose-rate and postirradiation environments is required in many cases. It is shown for Sandia hardened n-channel transistors with a 32 nm gate oxide, that switching from zero-volt bias, held during the entire radiation period, to positive bias during anneal clearly leads to a more positive threshold voltage shift (and thus the slowest circuit response) after Co-60 exposure than the standard case of maintaining positive bias during irradiation and anneal. It is concluded that irradiating these kinds of transistors with zero-volt bias, and annealing with positive bias, leads to worst-case postirradiation response. For commercial devices (with few interface states at doses of interest), on the other hand, device response only improves postirradiation, and worst-case response (in terms of device leakage) is for devices irradiated under positive bias and annealed with zero-volts bias.

Lateral power transistors in integrated circuits

CERN Document Server

Erlbacher, Tobias

2014-01-01

This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-10-20

To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

Fermilab main accelerator quadrupole transistorized regulators for improved tune stability

International Nuclear Information System (INIS)

Yarema, R.J.; Pfeffer, H.

1977-01-01

During early operation of the Fermilab Main Accelerator, tune fluctuations, caused by the SCR-controlled power supplies in the quad bus, limited the beam aperature at low energies. To correct this problem, two transistorized power supplies were built in 1975 to regulate and filter the main ring quad magnet current during injection and beam acceleration through the rf transistion region. There is one power supply in series with each quad bus. Each supply uses 320 parallel power transistors and is rated at 300A, 120V. Since the voltage and current capabilities of the transistorized supplies are limited, the supplies are turned-off at about 25GeV. A real-time computer system initiates turn-on of the SCR-controlled power supplies and regulation takeover by the SCR-controlled supplies, at the appropriate times

Nanophotonic quantum computer based on atomic quantum transistor

International Nuclear Information System (INIS)

Andrianov, S N; Moiseev, S A

2015-01-01

We propose a scheme of a quantum computer based on nanophotonic elements: two buses in the form of nanowaveguide resonators, two nanosized units of multiatom multiqubit quantum memory and a set of nanoprocessors in the form of photonic quantum transistors, each containing a pair of nanowaveguide ring resonators coupled via a quantum dot. The operation modes of nanoprocessor photonic quantum transistors are theoretically studied and the execution of main logical operations by means of them is demonstrated. We also discuss the prospects of the proposed nanophotonic quantum computer for operating in high-speed optical fibre networks. (quantum computations)

Nanophotonic quantum computer based on atomic quantum transistor

Energy Technology Data Exchange (ETDEWEB)

Andrianov, S N [Institute of Advanced Research, Academy of Sciences of the Republic of Tatarstan, Kazan (Russian Federation); Moiseev, S A [Kazan E. K. Zavoisky Physical-Technical Institute, Kazan Scientific Center, Russian Academy of Sciences, Kazan (Russian Federation)

2015-10-31

We propose a scheme of a quantum computer based on nanophotonic elements: two buses in the form of nanowaveguide resonators, two nanosized units of multiatom multiqubit quantum memory and a set of nanoprocessors in the form of photonic quantum transistors, each containing a pair of nanowaveguide ring resonators coupled via a quantum dot. The operation modes of nanoprocessor photonic quantum transistors are theoretically studied and the execution of main logical operations by means of them is demonstrated. We also discuss the prospects of the proposed nanophotonic quantum computer for operating in high-speed optical fibre networks. (quantum computations)

Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

Institute of Scientific and Technical Information of China (English)

潘洪亮; 金智; 麻芃; 郭建楠; 刘新宇; 叶甜春; 李佳; 敦少博; 冯志红

2011-01-01

Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2O3 as the top-gate dielectric.The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate.The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found.For the intrinsic characteristic of this particular channel material,the devices cannot be switched off.The cut-off frequencies of these graphene field-effect transistors,which have a gate length of l μm,are larger than 800 MHz.The largest one can reach 1.24 GHz.There are greater than 95％ active devices that can be successfully applied.We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors,which paves the way for high-performance graphene devices and circuits.%Wafer-scale graphene Beld-effect transistors are fabricated using benzocyclobutene and atomic layer deposition AI2O3 as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of l μm, are larger than 800MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene Geld-effect transistors, which paves the way for high-performance graphene devices and circuits.

Optimization of ultra-low-power CMOS transistors

International Nuclear Information System (INIS)

Stockinger, M.

2000-01-01

Ultra-low-power CMOS integrated circuits have constantly gained importance due to the fast growing portable electronics market. High-performance applications like mobile telephones ask for high-speed computations and low stand-by power consumption to increase the actual operating time. This means that transistors with low leakage currents and high drive currents have to be provided. Common fabrication methods will soon reach their limits if the on-chip feature size of CMOS technology continues to shrink at this very fast rate. New device architectures will help to keep track with the roadmap of the semiconductor industry. Especially doping profiles offer much freedom for performance improvements as they determine the 'inner functioning' of a transistor. In this work automated doping profile optimization is performed on MOS transistors within the TCAD framework SIESTA. The doping between and under the source/drain wells is discretized on an orthogonal optimization grid facilitating almost arbitrary two-dimensional shapes. A linear optimizer issued to find the optimum doping profile by variation of the doping parameters utilizing numerical device simulations with MINIMOS-NT. Gaussian functions are used in further optimization runs to make the doping profiles smooth. Two device generations are considered, one with 0.25 μm, the other with 0.1 μm gate length. The device geometries and source/drain doping profiles are kept fixed during optimization and supply voltages are chosen suitable for ultra-low-power purposes. In a first optimization study the drive current of NMOS transistors is maximized while keeping the leakage current below a limit of 1 pA/μm. This results in peaking channel doping devices (PCD) with narrow doping peaks placed asymmetrically in the channel. Drive current improvements of 45 % and 71 % for the 0.25 μm and 0.1 μm devices, respectively, are achieved compared to uniformly doped devices. The PCD device is studied in detail and explanations for

Low-Loss Ferrite Components for NASA Missions, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Ferrite based isolators and circulators have been successfully demonstrated at microwave, millimeter-wave and submillimeter-wave frequencies. These components are...

Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts.

Science.gov (United States)

Wang, Ching-Hua; Incorvia, Jean Anne C; McClellan, Connor J; Yu, Andrew C; Mleczko, Michal J; Pop, Eric; Wong, H-S Philip

2018-05-09

Black phosphorus (BP) is a promising two-dimensional (2D) material for nanoscale transistors, due to its expected higher mobility than other 2D semiconductors. While most studies have reported ambipolar BP with a stronger p-type transport, it is important to fabricate both unipolar p- and n-type transistors for low-power digital circuits. Here, we report unipolar n-type BP transistors with low work function Sc and Er contacts, demonstrating a record high n-type current of 200 μA/μm in 6.5 nm thick BP. Intriguingly, the electrical transport of the as-fabricated, capped devices changes from ambipolar to n-type unipolar behavior after a month at room temperature. Transmission electron microscopy analysis of the contact cross-section reveals an intermixing layer consisting of partly oxidized metal at the interface. This intermixing layer results in a low n-type Schottky barrier between Sc and BP, leading to the unipolar behavior of the BP transistor. This unipolar transport with a suppressed p-type current is favorable for digital logic circuits to ensure a lower off-power consumption.

Pseudo-diode based on protonic/electronic hybrid oxide transistor

Science.gov (United States)

Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran

2018-01-01

Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.

Organic transistors with high thermal stability for medical applications.

Science.gov (United States)

Kuribara, Kazunori; Wang, He; Uchiyama, Naoya; Fukuda, Kenjiro; Yokota, Tomoyuki; Zschieschang, Ute; Jaye, Cherno; Fischer, Daniel; Klauk, Hagen; Yamamoto, Tatsuya; Takimiya, Kazuo; Ikeda, Masaaki; Kuwabara, Hirokazu; Sekitani, Tsuyoshi; Loo, Yueh-Lin; Someya, Takao

2012-03-06

The excellent mechanical flexibility of organic electronic devices is expected to open up a range of new application opportunities in electronics, such as flexible displays, robotic sensors, and biological and medical electronic applications. However, one of the major remaining issues for organic devices is their instability, especially their thermal instability, because low melting temperatures and large thermal expansion coefficients of organic materials cause thermal degradation. Here we demonstrate the fabrication of flexible thin-film transistors with excellent thermal stability and their viability for biomedical sterilization processes. The organic thin-film transistors comprise a high-mobility organic semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, and thin gate dielectrics comprising a 2-nm-thick self-assembled monolayer and a 4-nm-thick aluminium oxide layer. The transistors exhibit a mobility of 1.2 cm(2) V(-1)s(-1) within a 2 V operation and are stable even after exposure to conditions typically used for medical sterilization.

Controlled ion-beam transformation of silicon bipolar microwave power transistor's characteristics

International Nuclear Information System (INIS)

Solodukha, V.A.; Snitovskij, Yu.P.

2015-01-01

In this article, a method for changing the silicon bipolar microwave power transistor's characteristics in a direct and deliberate manner by modifying the chemical composition at the molybdenum - silicon boundary, the electro-physical properties of molybdenum - silicon contacts, and the electrophysical characteristics of transistor structure areas by the phosphorus ions irradiation of generated ohmic molybdenum - silicon contacts to the transistor emitters is proposed for the first time. The possibilities of this method are investigated and confirmed experimentally. (authors)

Controlling the mode of operation of organic transistors through side-chain engineering

KAUST Repository

Giovannitti, Alexander

2016-10-11

Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors.

Controlling the mode of operation of organic transistors through side-chain engineering

Science.gov (United States)

Giovannitti, Alexander; Sbircea, Dan-Tiberiu; Inal, Sahika; Nielsen, Christian B.; Bandiello, Enrico; Hanifi, David A.; Sessolo, Michele; Malliaras, George G.; McCulloch, Iain; Rivnay, Jonathan

2016-01-01

Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors. PMID:27790983

Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors.

Science.gov (United States)

Santos, Lídia; Nunes, Daniela; Calmeiro, Tomás; Branquinho, Rita; Salgueiro, Daniela; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

2015-01-14

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

Improving the performance of X-ray proportional counters by using field transistor preamplifiers

International Nuclear Information System (INIS)

Kalinina, N.I.; Mel'ttser, L.V.; Pan'kin, V.V.

1972-01-01

The possibility of using low-noise field-effect transistors with the n-channel in preamplifiers for x-ray proportional counters constitutes the object of this article. The operation of the preamplifier assembled according to the scheme of the voltage amplifier and charge-sensitive preamplifier has been studied. The use of the field-effect transistor with the n-channel in preamplifiers for proportional counters allows to improve significantly the energy resolution and operation at reduced voltage and at high loads. Notably good results have been obtained when constructing the circuit of the premplifier with the field-effect transistor on the charge-sensitive principle. The use of home-produced field-effect transistors makes it possible to construct detectors of roentgen radiometric instruments to measure light element content with proportional counters at reduced voltage

Characteristics of voltage regulators with serial NPN transistor in the fields of medium and high energy photons

International Nuclear Information System (INIS)

Vukic, V.; Osmokrovic, P.

2007-01-01

Variation of collector - emitter dropout voltage on serial transistors of voltage regulators LM2990T-5 and LT1086CT5 were used as the parameter for detection of examined devices' radiation hardness in X and ? radiation fields. Biased voltage regulators with serial super-β transistor in the medium dose rate X radiation field had significantly different response from devices with conventional serial NPN transistor. Although unbiased components suffered greater damage in most cases, complete device failure happened only among the biased components with serial super-β transistor in Bremsstrahlung field. Mechanisms of transistors degradation in ionizing radiation fields were analysed [sr

Millimeter-Wave Thermal Analysis Development and Application to GEN IV Reactor Materials

Energy Technology Data Exchange (ETDEWEB)

Wosko, Paul; Sundram, S. K.

2012-10-16

New millimeter-wave thermal analysis instrumentation has been developed and studied for characterization of materials required for diverse fuel and structural needs in high temperature reactor environments such as the Next Generation Nuclear Plant (NGNP). A two-receiver 137 GHz system with orthogonal polarizations for anisotropic resolution of material properties has been implemented at MIT. The system was tested with graphite and silicon carbide specimens at temperatures up to 1300 ºC inside an electric furnace. The analytic and hardware basis for active millimeter-wave radiometry of reactor materials at high temperature has been established. Real-time, non contact measurement sensitivity to anisotropic surface emissivity and submillimeter surface displacement was demonstrated. The 137 GHz emissivity of reactor grade graphite (NBG17) from SGL Group was found to be low, ~ 5 %, in the 500 – 1200 °C range and increases by a factor of 2 to 4 with small linear grooves simulating fracturing. The low graphite emissivity would make millimeter-wave active radiometry a sensitive diagnostic of graphite changes due to environmentally induced stress fracturing, swelling, or corrosion. The silicon carbide tested from Ortek, Inc. was found to have a much higher emissivity at 137 GHz of ~90% Thin coatings of silicon carbide on reactor grade graphite supplied by SGL Group were found to be mostly transparent to millimeter-waves, increasing the 137 GHz emissivity of the coated reactor grade graphite to about ~14% at 1250 ºC.

Flexible Textile-Based Organic Transistors Using Graphene/Ag Nanoparticle Electrode

Science.gov (United States)

Kim, Youn; Kwon, Yeon Ju; Lee, Kang Eun; Oh, Youngseok; Um, Moon-Kwang; Seong, Dong Gi; Lee, Jea Uk

2016-01-01

Highly flexible and electrically-conductive multifunctional textiles are desirable for use in wearable electronic applications. In this study, we fabricated multifunctional textile composites by vacuum filtration and wet-transfer of graphene oxide films on a flexible polyethylene terephthalate (PET) textile in association with embedding Ag nanoparticles (AgNPs) to improve the electrical conductivity. A flexible organic transistor can be developed by direct transfer of a dielectric/semiconducting double layer on the graphene/AgNP textile composite, where the textile composite was used as both flexible substrate and conductive gate electrode. The thermal treatment of a textile-based transistor enhanced the electrical performance (mobility = 7.2 cm2·V−1·s−1, on/off current ratio = 4 × 105, and threshold voltage = −1.1 V) due to the improvement of interfacial properties between the conductive textile electrode and the ion-gel dielectric layer. Furthermore, the textile transistors exhibited highly stable device performance under extended bending conditions (with a bending radius down to 3 mm and repeated tests over 1000 cycles). We believe that our simple methods for the fabrication of graphene/AgNP textile composite for use in textile-type transistors can potentially be applied to the development of flexible large-area electronic clothes. PMID:28335276

Neutron Radiation Effect On 2N2222 And NTE 123 NPN Silicon Bipolar Junction Transistors

International Nuclear Information System (INIS)

Oo, Myo Min; Rashid, N K A Md; Hasbullah, N F; Karim, J Abdul; Zin, M R Mohamed

2013-01-01

This paper examines neutron radiation with PTS (Pneumatic Transfer System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analysis of the transistors in terms of electrical characterization such as current gain after neutron radiation. The key parameters are measured with Keithley 4200SCS. Experiment results show that the current gain degradation of the transistors is very sensitive to neutron radiation. The neutron radiation can cause displacement damage in the bulk layer of the transistor structure. The current degradation is believed to be governed by increasing recombination current between the base and emitter depletion region

Celebrating 65th Anniversary of the Transistor

Directory of Open Access Journals (Sweden)

Goce L. Arsov

2013-12-01

Full Text Available The paper is dedicated to the 65th anniversary of the invention of the revolutionary electronic component that actually changed our way of life—the transistor. It recounts the key historical moments leading up to the invention of the first semiconductor active component in 1947. The meaning of the blend “transistor” is explained using the memorandum issued by Bell Telephone Laboratories. Certain problems appeared in the engineering phase of the transistor development and the new components obtained as a result of this research are reviewed. The impact of this invention on the development of power electronics is being emphasized. Finally, the possibility that the most important invention of the 20th century has been conceived not once but twice is discussed.

Quantum engineering of transistors based on 2D materials heterostructures

Science.gov (United States)

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Nanowire transistors physics of devices and materials in one dimension

CERN Document Server

Colinge, Jean-Pierre

2016-01-01

From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in ...

Carbon nanotubes field-effect transistor for rapid detection of DHA

International Nuclear Information System (INIS)

Nguyen Thi Thuy; Nguyen Duc Chien; Mai Anh Tuan

2012-01-01

This paper presents the development of DNA sensor based on a network carbon nanotubes field effect transistor (CNTFETs) for Escherichia coli bacteria detection. The DNA sequences were immobilized on single-walled carbon nanotubes of transistor CNTFETs by using absorption. The hybridization of the DNA probe sequences and complementary DNA strands was detected by electrical conductance change from the electron doping by DNA hybridization directly on the carbon nanotubes leading to the change in the metal-CNTs barrier energy through the modulation of the electrode work function of carbon nanotubes field effect transistor. The results showed that the response time of DNA sensor was approximately 1 min and the sensitivity of DNA sensor was at 0.565 μA/nM; the detection limit of the sensor was about 1 pM of E. coli bacteria sample. (author)

Quantum engineering of transistors based on 2D materials heterostructures.

Science.gov (United States)

Iannaccone, Giuseppe; Bonaccorso, Francesco; Colombo, Luigi; Fiori, Gianluca

2018-03-01

Quantum engineering entails atom-by-atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of the practical realization of next-generation atomically thin transistors? In this Perspective, we analyse the outlook and the challenges of quantum-engineered transistors using heterostructures of two-dimensional materials against the benchmark of silicon technology and its foreseeable evolution in terms of potential performance and manufacturability. Transistors based on lateral heterostructures emerge as the most promising option from a performance point of view, even if heterostructure formation and control are in the initial technology development stage.

Carbon Nanotube Thin Film Transistors for Flat Panel Display Application.

Science.gov (United States)

Liang, Xuelei; Xia, Jiye; Dong, Guodong; Tian, Boyuan; Peng, Lianmao

2016-12-01

Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.

P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

KAUST Repository

Al-Jawhari, Hala A.

2013-10-09

P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.

Carbon Based Transistors and Nanoelectronic Devices

Science.gov (United States)

Rouhi, Nima

Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

Achromatic half-wave plate for submillimeter instruments in cosmic microwave background astronomy: modeling and simulation.

Science.gov (United States)

Savini, Giorgio; Pisano, Giampaolo; Ade, Peter A R

2006-12-10

We adopted an existing formalism and modified it to simulate, with high precision, the transmission, reflection, and absorption of multiple-plate birefringent devices as a function of frequency. To validate the model, we use it to compare the measured properties of an achromatic five-plate device with a broadband antireflection coating to expectations derived from the material optical constants and its geometric configuration. The half-wave plate presented here is observed to perform well with a phase shift variation of < 2 degrees from the ideal 180 degrees over a bandwidth of Deltav/v approximately 1 at millimeter wavelengths. This formalism represents a powerful design tool for birefringent polarization modulators and enables its optical properties to be specified with high accuracy.

Optomechanical transistor with mechanical gain

Science.gov (United States)

Zhang, X. Z.; Tian, Lin; Li, Yong

2018-04-01

We study an optomechanical transistor, where an input field can be transferred and amplified unidirectionally in a cyclic three-mode optomechanical system. In this system, the mechanical resonator is coupled simultaneously to two cavity modes. We show that it only requires a finite mechanical gain to achieve the nonreciprocal amplification. Here the nonreciprocity is caused by the phase difference between the linearized optomechanical couplings that breaks the time-reversal symmetry of this system. The amplification arises from the mechanical gain, which provides an effective phonon bath that pumps the mechanical mode coherently. This effect is analogous to the stimulated emission of atoms, where the probe field can be amplified when its frequency is in resonance with that of the anti-Stokes transition. We show that by choosing optimal parameters, this optomechanical transistor can reach perfect unidirectionality accompanied with strong amplification. In addition, the presence of the mechanical gain can result in ultralong delay in the phase of the probe field, which provides an alternative to controlling light transport in optomechanical systems.

Nanogap Electrodes towards Solid State Single-Molecule Transistors.

Science.gov (United States)

Cui, Ajuan; Dong, Huanli; Hu, Wenping

2015-12-01

With the establishment of complementary metal-oxide-semiconductor (CMOS)-based integrated circuit technology, it has become more difficult to follow Moore's law to further downscale the size of electronic components. Devices based on various nanostructures were constructed to continue the trend in the minimization of electronics, and molecular devices are among the most promising candidates. Compared with other candidates, molecular devices show unique superiorities, and intensive studies on molecular devices have been carried out both experimentally and theoretically at the present time. Compared to two-terminal molecular devices, three-terminal devices, namely single-molecule transistors, show unique advantages both in fundamental research and application and are considered to be an essential part of integrated circuits based on molecular devices. However, it is very difficult to construct them using the traditional microfabrication techniques directly, thus new fabrication strategies are developed. This review aims to provide an exclusive way of manufacturing solid state gated nanogap electrodes, the foundation of constructing transistors of single or a few molecules. Such single-molecule transistors have the potential to be used to build integrated circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.