Photoluminescence from Au nanoparticles embedded in Au:oxide composite films

International Nuclear Information System (INIS)

Liao Hongbo; Wen Weijia; Wong, George K. L.

2006-01-01

Au:oxide composite multilayer films with Au nanoparticles sandwiched by oxide layers (such as SiO 2 , ZnO, and TiO 2 ) were prepared in a magnetron sputtering system. Their photoluminescence (PL) spectra were investigated by employing a micro-Raman system in which an Argon laser with a wavelength of 514 nm was used as the pumping light. Distinct PL peaks located at a wavelength range between 590 and 680 nm were observed in most of our samples, with Au particle size varying from several to hundreds of nanometers. It was found that the surface plasmon resonance (SPR) in these composites exerted a strong influence on the position of the PL peaks but had little effect on the PL intensity

Photoluminescence of a single InAs/AlAs quantum dot

International Nuclear Information System (INIS)

Shamirzaev, T.S.; Zhuravlev, K.S.; Larsson, M.; Holtz, P.O.

2008-01-01

Micro-photoluminescence (μ-PL) of a simple InAs/AlAs quantum dot (QD) has been studied. It has been found that the μ-PL emission related to the recombination in a single QD is strongly broadened probably due to spectral diffusion. Emissions related to the recombination of biexcitons and excitons occupying excited levels of the QD are observed in μ-PL spectra at high excitation power densities. A red shift of the μ-PL emissions related to recombination of excitons in the ground and excited levels of the QD with increasing excitation power gives clear evidence for type I alignment of the InAs/AlAs QD. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases

International Nuclear Information System (INIS)

Moses, A. F.; Hoang, T. B.; Ahtapodov, L.; Dheeraj, D. L.; Fimland, B. O.; Weman, H.; Helvoort, A. T. J. van

2011-01-01

Low temperature (10 K) micro-photoluminescence (μ-PL) of single GaAs/AlGaAs core-shell nanowires with single GaAsSb inserts were measured. The PL emission from the zinc blende GaAsSb insert is strongly polarized along the nanowire axis while the PL emission from the wurtzite GaAs nanowire is perpendiculary polarized to the nanowire axis. The result indicates that the crystal phase, through the optical selection rules, has significant effect on the polarization of the PL from NWs besides the dielectric mismatch. The analysis of the PL results based on the electronic structure of these nanowires supports the correlation between the crystal phase and the PL emission.

Structure and photoluminescence of boron and nitrogen co-doped carbon nanorods

Energy Technology Data Exchange (ETDEWEB)

Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Gao, B. [College of Computer Science, Chongqing University, Chongqing 400044 (China); Chongqing Municipal Education Examinations Authority, Chongqing 401147 (China); Zhong, X.X., E-mail: xxzhong@sjtu.edu.cn [Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

2016-07-15

Graphical abstract: Boron- and nitrogen- doped carbon nanorods. - Highlights: • The co-doping of nitrogen and boron in carbon nanorods. • The doping mechanism of nitrogen and boron in carbon nanorods by plasma. • Photoluminescence properties of nitrogen- and boron-doped carbon nanorods. - Abstract: Boron and nitrogen doped carbon nanorods (BNCNRs) were synthesized by plasma-enhanced hot filament chemical vapor deposition, where methane, nitrogen and hydrogen were used as the reaction gases and boron carbide was the boron source. The results of scanning electron microscopy, micro-Raman spectroscopy, transmission electron microscopy and X-ray photoelectron spectroscopy indicate that boron and nitrogen can be used as co-dopants in amorphous carbon nanorods. Combined with the characterization results, the doping mechanism was studied. The mechanism is used to explain the formation of different carbon materials by different methods. The photoluminescence (PL) properties of BNCNRs were studied. The PL results show that the BNCNRs generate strong green PL bands and weak blue PL bands, and the PL intensity lowered due to the doping of boron. The outcomes advance our knowledge on the synthesis and optical properties of carbon-based nanomaterials and contribute to the development of optoelectronic nanodevices based on nano-carbon mateirals.

UV and air stability of high-efficiency photoluminescent silicon nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Yang, Jihua, E-mail: yangj@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Liptak, Richard [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Ave, Terre Haute, IN 47803 (United States); Rowe, David; Wu, Jeslin [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Casey, James; Witker, David [Dow Corning Corporation, 2200 W. Salzburg Road, Midland, MI 48686 (United States); Campbell, Stephen A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Kortshagen, Uwe, E-mail: kortshagen@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States)

2014-12-30

The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

International Nuclear Information System (INIS)

Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

2017-01-01

Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is

Rethinking the theoretical description of photoluminescence in compound semiconductors

Science.gov (United States)

Valkovskii, V.; Jandieri, K.; Gebhard, F.; Baranovskii, S. D.

2018-02-01

Semiconductor compounds, such as Ga(NAsP)/GaP or GaAsBi/GaAs, are in the focus of intensive research due to their unique features for optoelectronic devices. The optical spectra of compound semiconductors are strongly influenced by the random scattering potentials caused by compositional and structural disorder. The disorder potential is responsible for the red-shift (Stokes shift) of the photoluminescence (PL) peak and for the inhomogeneous broadening of the PL spectra. So far, the anomalous broadening of the PL spectra in Ga(NAsP)/GaP has been explained assuming two coexisting length scales of disorder. However, this interpretation appears in contradiction to the recently observed dependence of the PL linewidth on the excitation intensity. We suggest an alternative approach that describes the PL characteristics in the framework of a model with a single length scale of disorder. The price is the assumption of two types of localized states with different, temperature-dependent non-radiative recombination rates.

Photoluminescence of Turkish purple jade (turkiyenite)

International Nuclear Information System (INIS)

Hatipoğlu, Murat; Başevirgen, Yasemin

2012-01-01

The purple-colored unique gem material is only found in the Harmancık (Bursa) region of the western Anatolia (Turkey). Therefore, it is specially called “Turkish purple jade or turkiyenite” on the worldwide gem market. Even though its jadeite implication is the principal constituent, the material cannot be considered as a single jadeite mineral since other implications are quartz, orthoclase, epidote, chloritoid and phlogopite minerals. Even if the analytical methods are used to characterize and identify the Turkish purple jade samples in detail, the luminescence spectra, especially photoluminescence features regarding to composite mineral implications of the material are important because of the existence the numerous characteristic broad and intensive luminescence bands in the samples. We can state that the UV-irradiation luminescence centers as photoluminescence (PL) are due to the overall signals in the Turkish purple jade samples. Accordingly, the distinctive photoluminescence peaks at 743, 717, 698, 484, 465 and 442 nm in PL-2D (counter diagram and sections) and PL-3D (sequence spectra) ranging between 300 and 900 nm of wavelengths, and between 220 and 340 K of temperatures are observed. Finally, photoluminescence features of the heterogeneous-structured material cannot be simply attributed to any chemical impurities, since the jade mass has numerous heterogeneous mineral constituents instead of a single jadeite mineral. Six different mineral implications and chemical impurities in the material composition display complex and individual all kind of luminescence features. Therefore, photoluminescence as well as radioluminescence, cathodoluminescence and thermoluminescence spectra provide positive identification regarding to the provenance (geographic origin) of the original Turkish purple jade (turkiyenite). - Highlights: ► The purple-colored gem material is only found in the Harmancık-Bursa region of Turkey. ► Material is called “Turkish purple

Study of defect generated visible photoluminescence in zinc oxide nano-particles prepared using PVA templates

Energy Technology Data Exchange (ETDEWEB)

Oudhia, A. [Department of Physics, Government V.Y.T. PG. Autonomous College, Durg, 491001 C.G. (India); Choudhary, A., E-mail: aarti.bhilai@gmail.com [Department of Physics, Government V.Y.T. PG. Autonomous College, Durg, 491001 C.G. (India); Sharma, S.; Aggrawal, S. [Department of Physics, Government V.Y.T. PG. Autonomous College, Durg, 491001 C.G. (India); Dhoble, S.J. [RTM University Nagpur, Maharashtra (India)

2014-10-15

Intrinsic defect generated photoluminescence (PL) in zinc oxide nanoparticles (NPs) obtained by a PVA template based wet-chemical process has been studied. A good controllability was achieved on the surface defects, structure and the morphology of ZnO NPs through the variation of solvents used in synthesis. The PL emission strongly depended on the defect structure and morphology. SEM, XRD, annealing and PL excitation studies were used to analyze the types of defects involved in the visible emission as well as the defect concentration. The mechanism for the blue, green and yellow emissions was proposed. The spectral content of the visible emission was controlled through generation/removal of defects through the shape transformation or annealing by focusing on defect origins and broad controls. - Highlights: • ZnO nanoparticles were synthesized using poly-vinyl alcohol template in various solvents. • The structure and morphology of ZnO nanoparticles were depended on dielectric constant and boiling point of solvents. • Photoluminescence properties of ZnO nanoparticles were studied. • Maximum optical absorbance and Photoluminescence intensity were found in ethanolic preparation. • ZnO nanoparticles were annealed at different temperatures for detection of defect emission.

The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN

KAUST Repository

O'Donnell, Kevin Peter

2011-05-01

Several distinct luminescent centres form in GaN samples doped with Eu. One centre, Eu2, recently identified as the isolated, substitutional Eu impurity, EuGa, is dominant in ion-implanted samples annealed under very high pressures (1 GPa) of N2. According to structural determinations, such samples exhibit an essentially complete removal of lattice damage caused by the implantation process. A second centre, Eu1, probably comprising EuGa in association with an intrinsic lattice defect, produces a more complex emission spectrum. In addition there are several unidentified features in the 5D0 to 7F2 spectral region near 620 nm. We can readily distinguish Eu1 and Eu2 by their excitation spectra, in particular through their different sensitivities to above-gap and below-gap excitation. The present study extends recent work on photoluminescence/ excitation (PL/E) spectroscopy of Eu1 and Eu2 to arrive at an understanding of these mechanisms in terms of residual optically active defect concentrations. We also report further on the \\'host-independent\\' excitation mechanism that is active in the case of a prominent minority centre. The relevance of this work to the operation of the red GaN:Eu light-emitting diode is discussed. © 2010 Elsevier B.V. All rights reserved.

The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN

KAUST Repository

O'Donnell, Kevin Peter; Roqan, Iman S.; Wang, Ke; Lorenz, Katharina; Alves, Eduardo Jorge; Boćkowski, Michał X.

2011-01-01

Several distinct luminescent centres form in GaN samples doped with Eu. One centre, Eu2, recently identified as the isolated, substitutional Eu impurity, EuGa, is dominant in ion-implanted samples annealed under very high pressures (1 GPa) of N2. According to structural determinations, such samples exhibit an essentially complete removal of lattice damage caused by the implantation process. A second centre, Eu1, probably comprising EuGa in association with an intrinsic lattice defect, produces a more complex emission spectrum. In addition there are several unidentified features in the 5D0 to 7F2 spectral region near 620 nm. We can readily distinguish Eu1 and Eu2 by their excitation spectra, in particular through their different sensitivities to above-gap and below-gap excitation. The present study extends recent work on photoluminescence/ excitation (PL/E) spectroscopy of Eu1 and Eu2 to arrive at an understanding of these mechanisms in terms of residual optically active defect concentrations. We also report further on the 'host-independent' excitation mechanism that is active in the case of a prominent minority centre. The relevance of this work to the operation of the red GaN:Eu light-emitting diode is discussed. © 2010 Elsevier B.V. All rights reserved.

Localized surface plasmon resonance enhanced photoluminescence of CdSe QDs in PMMA matrix on silver colloids with different shapes

International Nuclear Information System (INIS)

Lu Liu; Xu Xiaoliang; Shi Chaoshu; Ming Hai

2010-01-01

Localized surface plasmon resonance (LSPR) enhanced photoluminescences (PL) from CdSe quantum dots (QDs) on worm-like or quasi-spherical silver colloids have been investigated. The shape of silver colloid film is controlled by annealing temperature (200 o C∼350 o C). Strong PL enhancements of CdSe QDs on both as-grown and annealed silver colloid films are observed. The results show that the PL enhancement factor of CdSe QDs on worm-like silver colloid film reaches as high as 15-fold. Moreover, the enhancement factor is 5 times larger than that obtained from the quasi-spherical silver colloids. The superiority of worm-like silver nanostructure on LSPR enhanced photoluminescence is attributed to its larger size, hot spots and multiple dipole resonance modes coupling, which are induced by aggregation effect.

380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

International Nuclear Information System (INIS)

Okada, Hiroshi; Nakanishi, Yasuo; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi

2008-01-01

The effect of 380 keV proton irradiation on the photoluminescence (PL) properties has been investigated for undoped and Eu-doped GaN. As the proton irradiation exceeds 1x10 13 cm -2 , a drastic decrease of PL intensity of the near band-edge emission of undoped GaN was observed. On the other hand, for Eu-doped GaN, the PL emission corresponding to the 5 D 0 → 7 F 2 transition in Eu 3+ kept the initial PL intensity after the proton irradiation up to 1x10 14 cm -2 . Present results, together with our previous report on electron irradiation results, suggest that Eu-doped GaN is a strong candidate for light emitting devices in high irradiation environment

Photoluminescence of Mg{sub 2}Si films fabricated by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Liao, Yang-Fang [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Xie, Quan, E-mail: qxie@gzu.edu.cn [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xiao, Qing-Quan [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Engineering Center for Avionics Electrical and Information Network of Guizhou Provincial Colleges and Universities, Anshun 561000 (China); Chen, Qian; Fan, Meng-Hui [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xie, Jing [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China)

2017-05-01

Highlights: • High quality Mg{sub 2}Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg{sub 2}Si films was reported. • The Mg{sub 2}Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg{sub 2}Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg{sub 2}Si-based light-emitting devices, Mg{sub 2}Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg{sub 2}Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg{sub 2}Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg{sub 2}Si film on Si (111) displays polycrystalline structure, whereas Mg{sub 2}Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg{sub 2}Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg{sub 2}Si films was observed for the first time. The PL emission wavelengths of Mg{sub 2}Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg{sub 2}Si films on glass substrate is much larger than that of Mg

The effect of ultraviolet irradiation on the photothermal, photoluminescence and photoluminescence excitation spectra of Mn-doped ZnS nanoparticles

International Nuclear Information System (INIS)

Briones Cruz, Almira; Shen Qing; Toyoda, Taro

2006-01-01

Research involving Mn doped nanocrystalline ZnS (ZnS:Mn) has grown in recent years, partly due to the high quantum luminescence efficiencies that have been reported. We measured the photoacoustic (PA), the photoluminescence (PL) and the photoluminescence excitation (PLE) spectra of surface-passivated and unpassivated ZnS:Mn. The effects of UV irradiation on the PL and PLE spectra were also studied. A decrease in the PA intensity after UV exposure was observed for the ZnS:Mn, indicating a decrease in the nonradiative relaxation probability. The observed increase in PL intensity indicates a corresponding increase in the radiative transition probability. For the PLE spectra, possible aggregation of the primary particles could have resulted in the lower measured energy of the PLE peak compared to the value predicted by the effective mass approximation theory

Solvothermal tuning of photoluminescent graphene quantum dots: from preparation to photoluminescence mechanism

Science.gov (United States)

Qi, Bao-Ping; Zhang, Xiaoru; Shang, Bing-Bing; Xiang, Dongshan; Zhang, Shenghui

2018-02-01

Solvothermal synthesis was employed to tune the surface states of graphene quantum dots (GQDs). Two series of GQDs with the particle sizes from 2.6 to 4.5 nm were prepared as follows: (I) GQDs with the same size but different oxygen degrees; (II) GQDs with different core sizes but the similar surface chemistry. Both the large sizes and the high surface oxidation degrees led to the redshift photoluminescence (PL) of GQDs. Electrochemiluminescence (ECL) spectra from two series of GQDs were all in accordance with their PL spectra, respectively, which provided good evidence for the conjugated structures in GQDs responsible for PL. [Figure not available: see fulltext.

Photoluminescence of highly compensated GaAs doped with high concentration of Ge

Science.gov (United States)

Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

1999-12-01

We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

Energy Technology Data Exchange (ETDEWEB)

Liu, Ke; Ma, Wenquan, E-mail: wqma@semi.ac.cn; Huang, Jianliang; Zhang, Yanhua; Cao, Yulian; Huang, Wenjun; Luo, Shuai; Yang, Tao [Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35, Beijing 100083 (China)

2015-07-27

We report on photoluminescence (PL) emission with long wavelength for quantum structure by the sub-monolayer (SML) growth technique on GaAs (001) substrate. It is found that the PL emission wavelength can be controlled by controlling the SML InAs deposition amount. At 12 K, the PL peak position of the grown samples changes from about 1.66 to 1.78 μm. At 120 K, the PL emission of a sample reaches 1.91 μm. The physical mechanism responsible for the measured long wavelength PL emission may be related to strong In segregation and intermixing effects occurred in the structure grown by SML growth technique.

Photoluminescence model of sulfur passivated p-InP nanowires

International Nuclear Information System (INIS)

Tajik, N; Haapamaki, C M; LaPierre, R R

2012-01-01

The effect of ammonium polysulfide solution, (NH 4 ) 2 S x , on the surface passivation of p-doped InP nanowires (NWs) was investigated by micro-photoluminescence. An improvement in photoluminescence (PL) intensity from individual NWs upon passivation was used to optimize the passivation procedure using different solvents, sulfur concentrations and durations of passivation. The optimized passivation procedure gave an average of 24 times improvement in peak PL intensity. A numerical model is presented to explain the PL improvement upon passivation in terms of a reduction in surface trap density by two orders of magnitude from 10 12 to 10 10 cm −2 , corresponding to a change in surface recombination velocity from 10 6 to 10 4 cm s −1 . The diameter dependence of the PL intensity is investigated and explained by the model. The PL intensity from passivated nanowires decreased to its initial (pre-passivation) value over a period of seven days in ambient air, indicating that the S passivation was unstable. (paper)

Effect of proton irradiation on photoluminescent properties of PDMS-nanodiamond composites

International Nuclear Information System (INIS)

Borjanovic, Vesna; Hens, Suzanne; Shenderova, Olga; McGuire, Gary E; Lawrence, William G; Edson, Clark; Jaksic, Milko; Zamboni, Ivana; Vlasov, Igor

2008-01-01

Pure poly(dimethylsiloxane) (PDMS) films, PDMS-nanodiamond (ND) and pure nanodiamond powder were irradiated with 2 MeV protons under a variety of fluence and current conditions. Upon proton irradiation, these samples acquire a fluence-dependent photoluminescence (PL). The emission and excitation spectra, photostability and emission lifetime of the induced photoluminescence of PDMS and PDMS-ND samples are reported. Pure PDMS exhibits a noticeable stable blue PL, while the PDMS-ND composites exhibit a pronounced stable green PL under 425 nm excitation. The PL of PDMS-ND composites is much more prominent than that of pure PDMS or pure ND powder even when irradiated at higher doses. The origin of the significantly enhanced PL intensity for the proton-irradiated PDMS-ND composite is explained by the combination of enhanced intrinsic PL within ND particles due to ion-implantation-generated defects and by PL originating from structural transformations produced by protons at the nanodiamond/matrix interface.

Engineering of the photoluminescence of ZnO nanowires by different growth and annealing environments

DEFF Research Database (Denmark)

Fernandes Cauduro, André Luis; Sombrio, C I L; Franzen, P L

2015-01-01

Optical properties of ZnO nanowires were investigated through photoluminescence (PL) at room and low temperatures. An excitonic structure was observed in the UV band emission and we are able to distinguish between free excitons, bound excitons and donor acceptor pairs. The PL spectra shows deep...... level emissions ranging from 1.4 eV up to 2.8 eV, strongly depending on surface defects whereas the red emission (1.7 eV) is activated at cryogenic temperatures. We attribute the green luminescence (2.4 eV) emission to the presence of zinc vacancies into ZnO nanowires. Further evidences that confirm...... the mechanism are observed in the PL emission spectra after annealing in O2 or Ar environments....

Gold Photoluminescence: Wavelength and Polarization Engineering

DEFF Research Database (Denmark)

Andersen, Sebastian Kim Hjælm; Pors, Anders Lambertus; Bozhevolnyi, Sergey I.

2015-01-01

We demonstrate engineering of the spectral content and polarization of photoluminescence (PL) from arrayed gold nanoparticles atop a subwavelength-thin dielectric spacer and optically-thick gold film, a configuration that supports gap-surface plasmon resonances (GSPRs). Choice of shapes...... and dimensions of gold nanoparticles influences the GSPR wavelength and polarization characteristics, thereby allowing us to enhance and spectrally mold the plasmon-assisted PL while simultaneously controlling its polarization. In order to understand the underlying physics behind the plasmon-enhanced PL, we...

Photoluminescence of Er in SiOx

International Nuclear Information System (INIS)

Wan Jun; Sheng Chi; Lu Fang; Gong Dawei; Fan Yongliang; Lin Feng; Wang Xun

1998-01-01

Erbium-doped SiO x is prepared by molecular beam epitaxy. The influence of Er on the incorporation of O is studied by using Auger spectroscopy. Photoluminescence (PL) peaks around the wave-length of 1.53 μm have been observed within the temperature range of 18 to 300 K after annealing. The relationship between PL intensity and annealing temperature is discussed. The temperature dependence of the PL intensity shows an exponential decay with an activation energy of 12 meV at low temperatures ( 100 K)

Photoluminescence of CdTe nanocrystals grown by pulsed laser ablation on a template of Si nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Guillen-Cervantes, A.; Silva-Lopez, H.; Becerril-Silva, M.; Arias-Ceron, J.S.; Campos-Gonzalez, E.; Zelaya-Angel, O. [CINVESTAV-IPN, Physics Department, Apdo. Postal 14-740, Mexico (Mexico); Medina-Torres, A.C. [Escuela Superior de Fisica y Matematicas del IPN, Mexico (Mexico)

2014-11-12

CdTe nanocrystals were grown on eroded Si (111) substrates at room temperature by pulsed laser ablation. Before growth, Si substrates were subjected to different erosion time in order to investigate the effect on the CdTe samples. The erosion process consists of exposition to a pulsed high-voltage electric arc. The surface consequence of the erosion process consists of Si nanoparticles which acted as a template for the growth of CdTe nanocrystals. CdTe samples were studied by X-ray diffraction (XRD), room temperature photoluminescence (RT PL) and high-resolution transmission electron microscopy (HRTEM). CdTe nanocrystals grew in the stable cubic phase, according to XRD spectra. A strong visible emission was detected in photoluminescence (PL) experiments. The PL signal was centered at 540 nm (∝2.34 eV). With the effective mass approximation, the size of the CdTe crystals was estimated around 3.5 nm. HRTEM images corroborated the physical characteristics of CdTe nanocrystals. These results could be useful for the development of CdTe optoelectronic devices. (orig.)

Colloidal InP/ZnS core-shell nanocrystals studied by linearly and circularly polarized photoluminescence

International Nuclear Information System (INIS)

Langof, L.; Fradkin, L.; Ehrenfreund, E.; Lifshitz, E.; Micic, O.I.; Nozik, A.J.

2004-01-01

The magneto-optical properties of InP/ZnS core-shell nanocrystals (NCs) were investigated by measuring the degree of linear and circular polarization of photoluminescence (PL) spectra, in the presence of an external magnetic field under resonant or non-resonant excitation. The linearly polarized PL data strongly indicate that InP/ZnS NCs have a prolongated shape. The resonant-excited circularly polarized PL decay curves indicate that the spin relaxation time of the studied samples is shorter than the radiative lifetime of their exciton. Furthermore, the magnetic field-induced circularly polarized PL process reveals an exciton g factor (g ex ) of 0.55. Thus, such studies may serve as a tool to directly estimate the NC's shape anisotropy and to determine the g-factor of charge carriers and excitons in those NCs

Colloidal InP/ZnS core shell nanocrystals studied by linearly and circularly polarized photoluminescence

Science.gov (United States)

Langof, L.; Fradkin, L.; Ehrenfreund, E.; Lifshitz, E.; Micic, O. I.; Nozik, A. J.

2004-02-01

The magneto-optical properties of InP/ZnS core-shell nanocrystals (NCs) were investigated by measuring the degree of linear and circular polarization of photoluminescence (PL) spectra, in the presence of an external magnetic field under resonant or non-resonant excitation. The linearly polarized PL data strongly indicate that InP/ZnS NCs have a prolongated shape. The resonant-excited circularly polarized PL decay curves indicate that the spin relaxation time of the studied samples is shorter than the radiative lifetime of their exciton. Furthermore, the magnetic field-induced circularly polarized PL process reveals an exciton g factor ( gex) of 0.55. Thus, such studies may serve as a tool to directly estimate the NC's shape anisotropy and to determine the g-factor of charge carriers and excitons in those NCs.

Microscopic modeling of photoluminescence of strongly disordered semiconductors

International Nuclear Information System (INIS)

Bozsoki, P.; Kira, M.; Hoyer, W.; Meier, T.; Varga, I.; Thomas, P.; Koch, S.W.

2007-01-01

A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution

Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

International Nuclear Information System (INIS)

Hamadeh, H; Naddaf, M; Jazmati, A

2008-01-01

Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

Energy Technology Data Exchange (ETDEWEB)

Hamadeh, H; Naddaf, M; Jazmati, A [Department of Physics, Atomic Energy Commission of Syria, PO Box 6091, Damascus (Syrian Arab Republic)], E-mail: Scientific8@aec.org.sy

2008-12-21

Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

International Nuclear Information System (INIS)

Hamadeh, H.; Naddaf, M.; Jazmati, A.

2009-01-01

Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase of its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS. (author)

Near infrared photoluminescence properties of porous silicon prepared under the influence of light illumination

Science.gov (United States)

Hamadeh, H.; Naddaf, M.; Jazmati, A.

2008-12-01

Porous silicon (PS) has been prepared by anodic etching of boron doped silicon under the influence of monochromatic light illumination. The optical properties of the PS samples have been investigated using temperature dependent photoluminescence (PL) spectroscopy. An overall enhancement of the infrared luminescence yield is caused by the light illumination. In the visible spectral range, changes at the low energy side of the broad PL band were observed. In the near infrared spectral range, a new PL band at 850 nm, which is strongly correlated with light illumination, was detected. The new PL band disappears once blue light is used, whereas an increase in its intensity is observed, when the etching is performed under the illumination of light with wavelengths close to the band gap. By increasing the temperature, the 850 nm transition band grows at the expense of the main near infrared transition at 1100 nm. The recombination characteristics of this PL band are indicative of its extrinsic nature. The macroscopic morphology shows strong dependence on the wavelength of the illumination light. Photoassisted preparation could provide a tool for the control of the optical and structural properties of PS.

Tunable photoluminescence of porous silicon by liquid crystal infiltration

International Nuclear Information System (INIS)

Ma Qinglan; Xiong Rui; Huang Yuanming

2011-01-01

The photoluminescence (PL) of porous silicon films has been investigated as a function of the amount of liquid crystal molecules that are infiltrated into the constricted geometry of the porous silicon films. A typical nematic liquid crystal 4-pentyl-4'-cyanobiphenyl was employed in our experiment as the filler to modify the PL of porous silicon. It is found that the originally red PL of porous silicon films can be tuned to blue by simply adjusting the amount of liquid crystal molecules in the microchannels of the porous films. The chromaticity coordinates are calculated for the recorded PL spectra. The mechanism of the tunable PL is discussed. Our results have demonstrated that the luminescent properties of porous silicon films can be efficiently tuned by liquid crystal infiltration. - Highlights: → Liquid crystal infiltration can tune the photoluminescence of porous silicon. → Red emission of porous silicon can be switched to blue by the infiltration. → Chromaticity coordinates are calculated for the tuned emissions. → White emission is realized for porous silicon by liquid crystal infiltration.

Blue-green photoluminescence in MCM-41 mesoporous nanotubes

CERN Document Server

Shen, J L; Lui, Y L; Cheng, P W; Cheng, C F

2003-01-01

Different photoluminescence (PL) techniques have been used to study the blue-green emission from siliceous MCM-41 nanotubes. It was found that the intensity of the blue-green PL is enhanced by rapid thermal annealing (RTA). This enhancement is explained by the generation of twofold-coordinated Si centres and non-bridging oxygen hole centres, in line with the surface properties of MCM-41. On the basis of the analysis of the PL following RTA, polarized PL, and PL excitation, we suggest that the triplet-to-singlet transition of twofold-coordinated silicon centres is responsible for the blue-green PL in MCM-41 nanotubes. (letter to the editor)

Dependence of photoluminescence (PL) emission intensity on Eu3+ and ZnO concentrations in Y2O3:Eu3+ and ZnO·Y2O3:Eu3+ nanophosphors

CSIR Research Space (South Africa)

Mhlongo, GH

2011-08-01

Full Text Available Y2O3:Eu3+ and ZnO·Y2O3:Eu3+ nanophosphor powders with different concentrations of Eu3+ ions were synthesized by a sol–gel method and their luminescence properties were investigated. The red photoluminescence (PL) from Eu3+ ions with the main...

Photoluminescence decay lifetime measurements of hemicyanine derivatives of different alkyl chain lengths

International Nuclear Information System (INIS)

Shim, Taekyu; Lee, Myounghee; Kim, Sungho; Sung, Jaeho; Rhee, Bum Ku; Kim, Doseok; Kim, Hyunsung; Yoon, Kyung Byung

2004-01-01

The fluorescence upconversion setup for the detection of photoluminescence (PL) decay lifetime with subpicosecond time resolution was constructed, and the photoluminescence phenomena of several hemicyanine dyes with alkyl chains of different chain lengths tethered to the N atom of the pyridine moiety (HC-n, n=6, 15, 22) in methanol were investigated. The average decay lifetimes of the solutions determined from the measured data by multi-order exponential decay curve fitting were ∼27 ps at the PL peak wavelength. It was found that the PL decay properties did not depend on the alkyl chain length in the molecule, implying that the twist of the alkylpyridinium ring of the molecule is not possible as a nonfluorescing relaxation pathway. The time-dependent PL spectra constructed from the PL lifetime data showed the dynamic Stokes shift of ∼1000 cm -1

Coherent photoluminescence excitation spectroscopy of semicrystalline polymeric semiconductors

Science.gov (United States)

Silva, Carlos; Grégoire, Pascal; Thouin, Félix

In polymeric semiconductors, the competition between through-bond (intrachain) and through-space (interchain) electronic coupling determines two-dimensional spatial coherence of excitons. The balance of intra- and interchain excitonic coupling depends very sensitively on solid-state microstructure of the polymer film (polycrystalline, semicrystalline with amorphous domains, etc.). Regioregular poly(3-hexylthiophene) has emerged as a model material because its photoluminescence (PL) spectral lineshape reveals intricate information on the magnitude of excitonic coupling, the extent of energetic disorder, and on the extent to which the disordered energy landscape is correlated. I discuss implementation of coherent two-dimensional electronic spectroscopy. We identify cross peaks between 0-0 and 0-1 excitation peaks, and we measure their time evolution, which we interpret within the context of a hybrid HJ aggregate model. By measurement of the homogeneous linewidth in diverse polymer microstructures, we address the nature of optical transitions within such hynbrid aggregate model. These depend strongly on sample processing, and I discuss the relationship between microstructure, steady-state absorption and PL spectral lineshape, and 2D coherent PL excitation spectral lineshapes.

Tailoring surface groups of carbon quantum dots to improve photoluminescence behaviors

International Nuclear Information System (INIS)

Tian, Ruixue; Hu, Shengliang; Wu, Lingling; Chang, Qing; Yang, Jinlong; Liu, Jun

2014-01-01

Highlights: • We develop a facile and green method to tailor surface groups. • Photoluminescence behaviors of carbon quantum dots are improved by tailoring their surface groups. • Highly luminescent efficiency is produced by amino-hydrothermal treatment of reduced carbon quantum dots. - Abstract: A facile and green method to tailor surface groups of carbon quantum dots (CQDs) is developed by hydrothermal treatment in an autoclave. The photoluminescence (PL) behaviors of CQDs depend on the types of surface groups. Highly efficient photoluminescence is obtained through amino-hydrothermal treatment of the CQDs reduced by NaBH 4 . The effects of surface groups on PL behavior are attributed to the degrees of energy band bending induced by surface groups

Colloidal InP/ZnS core-shell nanocrystals studied by linearly and circularly polarized photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Langof, L.; Fradkin, L.; Ehrenfreund, E.; Lifshitz, E.; Micic, O.I.; Nozik, A.J

2004-02-16

The magneto-optical properties of InP/ZnS core-shell nanocrystals (NCs) were investigated by measuring the degree of linear and circular polarization of photoluminescence (PL) spectra, in the presence of an external magnetic field under resonant or non-resonant excitation. The linearly polarized PL data strongly indicate that InP/ZnS NCs have a prolongated shape. The resonant-excited circularly polarized PL decay curves indicate that the spin relaxation time of the studied samples is shorter than the radiative lifetime of their exciton. Furthermore, the magnetic field-induced circularly polarized PL process reveals an exciton g factor (g{sub ex}) of 0.55. Thus, such studies may serve as a tool to directly estimate the NC's shape anisotropy and to determine the g-factor of charge carriers and excitons in those NCs.

Photoluminescence of Copper-Doped Lithium Niobate Crystals

Science.gov (United States)

Gorelik, V. S.; Pyatyshev, A. Yu.; Sidorov, N. V.

2018-05-01

The photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV-Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520-620 nm.

Effect of ruthenium cluster on the photoluminescence of chemically derivatized porous silicon

International Nuclear Information System (INIS)

Boukherroub, Rabah; Zargarian, Davit; Reber, Christian; Lockwood, David J.; Carty, Arthur J.; Wayner, Danial D.M.

2003-01-01

A green photoluminescent triruthenium cluster (I) has been chemisorbed on highly luminescent porous silicon (PSi) layers, either freshly prepared or chemically modified with 1-decene, ethyl undecylenate, or undecylenic acid, in order to study the influence of the cluster on the photoluminescence (PL) arising from the PSi. Immersing the hydrogen-terminated PSi in a hexane solution of (I) for several days at room temperature led to the quenching of PL arising from PSi; the only PL detected was due to the Ru cluster (I). A complete quenching of the PL due to PSi was also observed when derivatized PSi surfaces were exposed to the same solution of (I); in these cases, the PL of (I) also shifted to lower energies. Both the quenching of the PL arising from the PSi layers and the shift in the PL of the cluster (I) are likely due to the difference in the chemical interaction of the PO moiety and the CO groups of the Ru cluster with the terminal functional group of the organic monolayer

Effect of ruthenium cluster on the photoluminescence of chemically derivatized porous silicon

Energy Technology Data Exchange (ETDEWEB)

Boukherroub, Rabah; Zargarian, Davit; Reber, Christian; Lockwood, David J.; Carty, Arthur J.; Wayner, Danial D.M

2003-07-15

A green photoluminescent triruthenium cluster (I) has been chemisorbed on highly luminescent porous silicon (PSi) layers, either freshly prepared or chemically modified with 1-decene, ethyl undecylenate, or undecylenic acid, in order to study the influence of the cluster on the photoluminescence (PL) arising from the PSi. Immersing the hydrogen-terminated PSi in a hexane solution of (I) for several days at room temperature led to the quenching of PL arising from PSi; the only PL detected was due to the Ru cluster (I). A complete quenching of the PL due to PSi was also observed when derivatized PSi surfaces were exposed to the same solution of (I); in these cases, the PL of (I) also shifted to lower energies. Both the quenching of the PL arising from the PSi layers and the shift in the PL of the cluster (I) are likely due to the difference in the chemical interaction of the PO moiety and the CO groups of the Ru cluster with the terminal functional group of the organic monolayer.

Effect of ruthenium cluster on the photoluminescence of chemically derivatized porous silicon

Science.gov (United States)

Boukherroub, Rabah; Zargarian, Davit; Reber, Christian; Lockwood, David J.; Carty, Arthur J.; Wayner, Danial D. M.

2003-07-01

A green photoluminescent triruthenium cluster (I) has been chemisorbed on highly luminescent porous silicon (PSi) layers, either freshly prepared or chemically modified with 1-decene, ethyl undecylenate, or undecylenic acid, in order to study the influence of the cluster on the photoluminescence (PL) arising from the PSi. Immersing the hydrogen-terminated PSi in a hexane solution of (I) for several days at room temperature led to the quenching of PL arising from PSi; the only PL detected was due to the Ru cluster (I). A complete quenching of the PL due to PSi was also observed when derivatized PSi surfaces were exposed to the same solution of (I); in these cases, the PL of (I) also shifted to lower energies. Both the quenching of the PL arising from the PSi layers and the shift in the PL of the cluster (I) are likely due to the difference in the chemical interaction of the PO moiety and the CO groups of the Ru cluster with the terminal functional group of the organic monolayer.

Photoluminescent (PL) or electroluminescent (EL) quantum dots for display, lighting, and photomedicine (Conference Presentation)

Science.gov (United States)

Dong, Yajie

2017-02-01

Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum

Synthesis of silver hollow nanoparticles and observation of photoluminescence emission properties

International Nuclear Information System (INIS)

Desarkar, H.S.; Kumbhakar, P.; Mitra, A.K.

2013-01-01

Preparation of hollow silver nanoparticles (HSNs) along-with solid silver nanoparticles are reported by Nd:YAG laser ablation of solid silver target immersed in water medium with a laser ablation time (LAT) duration of 50 min and with the incident laser fluence of 151 J/cm 2 . It is found that only solid silver nanoparticles are produced when the experiment is carried out with smaller values of LAT duration. The synthesized samples are characterized by using transmission electron microscopy and UV–Visible absorption spectroscopy. The UV–Visible absorption spectra of the samples show sharp absorptions in the ultraviolet and in visible regions due to interband transition and surface plasmon resonance oscillations in Ag nanoparticles, respectively. It is found that all samples exhibit photoluminescence (PL) emission, at room temperature, in the UV–Visible region peaked at ∼346 nm, due to the recombination of electrons with holes from sp conduction band to d band of Ag. The sample containing HSNs exhibits strong PL emission and the value of peak PL emission intensity is enhanced by the factor of 2.4 in comparison to that obtained from the sample synthesized with LAT duration of 20 min. The synthesized HSNs may find applications in catalysis and in chemical sensing. - Highlights: ►Hollow silver nanoparticles of 15–60 nm particle sizes are prepared by laser ablation. ►Prepared Ag nanoparticles show sharp absorptions in the UV and visible regions. ►Strong interband transition along-with SPR oscillations is reported. ►Enhancement (2.4 times) in photoluminescence emission in the UV region is reported.

Suppression of the green photoluminescence band in ZnO embedded into porous opal by spray pyrolysis

International Nuclear Information System (INIS)

Abrarov, S.M.; Yuldashev, Sh.U.; Lee, S.B.; Kang, T.W.

2004-01-01

The photoluminescence (PL) and transmittance characteristics of the zinc oxide embedded into voids of FCC sub-micron packed silicon dioxide spheres by using technologically simple and inexpensive spray pyrolysis are reported. The uniform formation of ZnO nanocrystalline particles inside of the porous opal takes place after deposition in aqueous solution with zinc nitrite hexahydride precursor followed by thermal annealing. The decrease of green PL is observed due to the inhibition of spontaneous emission through oxygen vacancies in ZnO. The strong red shift of the transmittance characteristics signifies the essential filling of voids in the opal matrix

Room-temperature synthesis and photoluminescence of hexagonal CePO4 nanorods

Science.gov (United States)

Zhu, J.; Zhang, K.; Zhao, H. Y.

2018-01-01

Hexagonal CePO4 nanorods were synthesized via a simple chemical precipitation route at room-temperature without the presence of surfactants and then characterized by powder X-ray diffraction (XRD), energy-dispersive X-ray (EDX) spectrometry, scanning electron microscopy (SEM), transmission electron microscopy (TEM), ultraviolet-visible (UV-vis) absorption and photoluminescence (PL) spectroscopy. Hexagonal CePO4 nanorods exhibit strong ultraviolet absorption and ultraviolet luminescence, which correspond to the electronic transitions between 4f and 5d state of Ce3+ ions.

Photoluminescence study of ZnS and ZnS:Pb nanoparticles

International Nuclear Information System (INIS)

Virpal,; Hastir, Anita; Kaur, Jasmeet; Singh, Gurpreet; Singh, Ravi Chand

2015-01-01

Photoluminescence (PL) study of pure and 5wt. % lead doped ZnS prepared by co-precipitation method was conducted at room temperature. The prepared nanoparticles were characterized by X-ray Diffraction (XRD), UV-Visible (UV-Vis) spectrophotometer, Photoluminescence (PL) and Raman spectroscopy. XRD patterns confirm cubic structure of ZnS and PbS in doped sample. The band gap energy value increased in case of Pb doped ZnS nanoparticles. The PL spectrum of pure ZnS was de-convoluted into two peaks centered at 399nm and 441nm which were attributed to defect states of ZnS. In doped sample, a shoulder peak at 389nm and a broad peak centered at 505nm were observed. This broad green emission peak originated due to Pb activated ZnS states

High yield growth of uniform ZnS nanospheres with strong photoluminescence properties

International Nuclear Information System (INIS)

Li, Yuan; Li, Qing; Wu, Huijie; Zhang, Jin; Lin, Hua; Nie, Ming; Zhang, Yu

2013-01-01

Graphical abstract: High-yield ZnS nanospheres with an average diameter of 80 nm were fabricated successfully in aqueous solution at 100 °C by the assistance of surfactant PVP. It was found that PVP plays a crucial role in the formation of uniform ZnS nanospheres. A possible self-assembling growth mechanism was proposed. The UV–vis spectrum indicates that the as-prepared ZnS nanospheres exhibit a dramatic blue-shift. PL spectrum reveals that the ZnS nanospheres have a strong visible emission peak centered at 516 nm with excitation light of 400 nm. Highlights: ► High-yield ZnS nanospheres were generated conveniently in aqueous solution. ► The amount of surfactant PVP plays a crucial role on the morphology and size of the products. ► A tentative explanation for the growth mechanism of ZnS nanospheres was proposed. ► The UV–vis spectrum indicated that the sample exhibits a dramatic blue-shift. ► PL spectrum reveals that ZnS nanospheres have a strong visible emission peak centered at 516 nm with excitation light of 400 nm. - Abstract: High yield ZnS nanospheres were generated conveniently in aqueous solution with the assistance of surfactant polyvinyl pyrrolidone (PVP). The products were characterized by XRD, EDX, XPS, FESEM, TEM and HRTEM. The as-prepared ZnS nanospheres were uniform with an average diameter of 80 nm. The role of PVP in the forming of ZnS nanospheres was investigated. The results indicated that surfactant PVP plays a crucial role on the morphology and size of the products. Moreover, a tentative explanation for the growth mechanism of ZnS nanospheres was proposed. UV–vis and PL absorption spectrum were used to investigate the optical properties of ZnS nanospheres. The UV–vis spectrum indicated that the sample exhibits a dramatic blue-shift. PL spectrum reveals that ZnS nanospheres have a strong visible emission peak centered at 516 nm with excitation light of 400 nm.

Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

KAUST Repository

Ben Slimane, Ahmed

2013-01-01

We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.

Energy transfer induced Eu{sup 3+} photoluminescence enhancement in tellurite glass

Energy Technology Data Exchange (ETDEWEB)

Stambouli, W. [Laboratoire des Materiaux Mineraux et leurs Applications, Centre National de Recherches en Sciences des Materiaux, B.P. 95, Hammam-Lif 2050 (Tunisia); Elhouichet, H., E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire des Materiaux Mineraux et leurs Applications, Centre National de Recherches en Sciences des Materiaux, B.P. 95, Hammam-Lif 2050 (Tunisia); Departement de Physique, Faculte des Sciences de Tunis, Universite de Tunis-ElManar ElManar 2092, Tunis (Tunisia); Gelloz, B. [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, 184-8588 Tokyo (Japan); Ferid, M. [Laboratoire des Materiaux Mineraux et leurs Applications, Centre National de Recherches en Sciences des Materiaux, B.P. 95, Hammam-Lif 2050 (Tunisia); Koshida, N. [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, 184-8588 Tokyo (Japan)

2012-01-15

In this work, structural, thermal and optical properties of Eu{sup 3+} doped TeO{sub 2}-La{sub 2}O{sub 3}-TiO{sub 2} glass were investigated. The differential scanning calorimetry (DSC) measurements reveal an important stability factor {Delta}T=143.52 K, which indicates the good thermal and mechanical stabilities of tellurite glass. From the absorption spectrum, the optical band gap was found to be direct with E{sub g}=3.23 eV. The temperature dependences of photoluminescence (PL) properties of Eu-doped and Eu-Tb codoped tellurite glass are investigated. As the temperature increases from 7 to 300 K, both the PL intensity and the PL lifetime relative to the {sup 5}D{sub 2}{yields}{sup 7}F{sub 0} are nearly constant below 230 K and then an enhancement takes place. This anomalous feature is attributed to the thermally activated carrier transfer process from charged intrinsic defects states to Eu{sup 3+} energy levels. By co-doping tellurite glasses with Eu and Tb, a strong Eu{sup 3+} PL enhancement is shown due to excitation transfer from Tb{sup 3+} and intrinsic defects to Eu ions. - Highlights: > TeO{sub 2}-La{sub 2}O{sub 3}-TiO{sub 2} glass doped Eu{sup 3+} with good thermal stability elaborated. > PL evolution of Eu{sup 3+} with temperature shows a non-conventional behavior. > Thermally activated carrier transfer from intrinsic defects states to Eu{sup 3+} shown. > Strong Eu{sup 3+} PL enhancement is shown in Eu-Tb codoped glass.

[The photoluminescence and absorption properties of Co/AAO nano-array composites].

Science.gov (United States)

Li, Shou-Yi; Wang, Cheng-Wei; Li, Yan; Wang, Jian; Ma, Bao-Hong

2008-03-01

Ordered Co/AAO nano-array structures were fabricated by alternating current (AC) electrodeposition method within the cylindrical pores of anodic aluminum oxide (AAO) template prepared in oxalic acid electrolyte. The photoluminescence (PL) emission and photoabsorption of AAO templates and Co/AAO nano-array structures were investigated respectively. The results show that a marked photoluminescence band of AAO membranes occurs in the wavelength range of 350-550 nm and their PL peak position is at 395 nm. And with the increase in the deposition amount of Co nanoparticles, the PL intensity of Co/AAO nano-array structures decreases gradually, and their peak positions of the PL are invariable (395 nm). Meanwhile the absorption edges of Co/AAO show a larger redshift, and the largest shift from the near ultraviolet to the infrared exceeds 380 nm. The above phenomena caused by Co nano-particles in Co/AAO composite were analyzed.

Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy

International Nuclear Information System (INIS)

Shen, C.H.; Chen, H.Y.; Lin, H.W.; Wu, C.Y.; Gwo, S.; Klochikhin, A.A.; Davydov, V.Yu.

2007-01-01

We report the unusual photoluminescence (PL) properties of vertically aligned InN nanorod arrays grown on Si(111) with a Si 3 N 4 buffer layer. The optimum growth conditions of InN nanorods are obtained by controlling the III/V ratio and the growth temperature. Structural characterization by X-ray diffraction and scanning electron microscopy indicates that individual nanorods are wurtzite InN single crystals with the growth direction along the c-axis. Near-infrared PL from InN nanorods is clearly observed at room temperature. However, in comparison to the PL from InN epitaxial films, the PL from InN nanorods is significantly lower in efficiency and exhibit anomalous temperature dependence. We propose that these unusual PL properties are results of considerable structural disorder (especially for the low-temperature grown InN nanorods) and strong surface electron accumulation effect. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Band-edge photoluminescence in CdTe

International Nuclear Information System (INIS)

Horodysky, P.; Grill, R.; Hlidek, P.

2006-01-01

Near band-gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4-500 K). It is demonstrated that the high-temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free-exciton resonance energy on the PL spectra is analytically studied by solving the diffusion-recombination equation. We show that the reabsorption of the radiation by the free-exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room-temperature PL maximum matches neither the free-exciton resonance nor the band-gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electro- and photoluminescence in ZnS crystals

International Nuclear Information System (INIS)

Klimenko, V.I.; Muradyan, A.M.; Solov'ev, A.V.; Shmurak, S.Z.

1991-01-01

Comperative study of spectral characteristics of electroluminescence (EL), induced by alternative electrical field (frequency-10kHz, average field intencity-10 2 -5x10 3 V/cm), and photoluminescence (PL) of ZnS-Cu microtwin crystals is carried out. It is shown, that PL and EL spectra differ within the hole temperature range of 77-300 K. Difference in the process of EL and PL temperature dependences is revealed. The EL minimum at T min ∼ 170-180K. The EL intensity at T min is by order lower than at 77 and 300 K. The PL dependence at the same time monotonically decreases by T increase. EL mechanism, explaining the experimental data obtained is proposed

Nanophosphor CaSO4:Eu2+ for photoluminescence liquid crystal display (PLLCD)

Science.gov (United States)

Patle, Anita; Patil, R. R.; Moharil, S. V.

2018-05-01

In this work PL enhancement of CaSO4:Eu2+ nanophosphor which was synthesized with 0.01M molarity by co-precipitation method is presented. Synthesized phosphor was characterized by XRD, SEM, TEM and PL measurements. Average particle size is found to be in the range 80-100nm with Hexagonal morphology and PL studies showed emission peaks at 380nm, when samples were excited by 254nm. The observed PL emission is characteristic emission of Eu2+ similar to that observed in bulk CaSO4:Eu2. However under identical condition it is observed that intensity of emission get enhanced for 0.01M size which is doubled to that of 0.1M with similar emission at 380nm. A phosphor with narrow emission band around 390 nm is desirable, since at this wavelength the transmission of standard glass, polarizing plastic, other coating and LCD material is at acceptable level. Strong Eu2+ emission is observed in CaSO4:Eu nanophosphor which finds applications for PLLCD (photoluminescent liquid crystal display).

Defect chemistry in CuGaS2 thin films: A photoluminescence study

International Nuclear Information System (INIS)

Botha, J.R.; Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Weber, J.

2007-01-01

In this paper, the radiative recombination in CuGaS 2 thin films, deposited by metalorganic vapour phase epitaxy (MOVPE), is studied by photoluminescence (PL) spectroscopy. From PL studies of several series of layers grown under various growth conditions, a clear picture emerges of the radiative emission dominating for Cu-rich and Ga-rich layers. For near-stoichiometric layers, weak excitonic recombination at ∼ 2.48 eV and a donor-acceptor line at ∼ 2.4 eV are observed in the low temperature PL spectra. In Cu-rich layers, a donor-acceptor band at ∼ 2.18 eV dominates, while a band at ∼ 2.25 eV dominates for slightly Ga-rich material. For Ga-rich layers, deviations from the ideal Cu/Ga ratio of more than a few percent strongly quenches the emission above 2 eV in favour of a very broad band at ∼ 1.8 eV. The PL response is discussed within the context of fluctuating potentials in compensated material and compared to available reports in literature

Photoluminescence and photocatalytic activities of Ag/ZnO metal-semiconductor heterostructure

International Nuclear Information System (INIS)

Sarma, Bikash; Deb, Sujit Kumar; Sarma, Bimal K.

2016-01-01

Present article focuses on the photocatalytic activities of ZnO nanorods and Ag/ZnO heterostructure deposited on polyethylene terephthalate (PET) substrate. ZnO nanorods are synthesized by thermal decomposition technique and Ag nanoparticles deposition is done by photo-deposition technique using UV light. X-ray diffraction studies reveal that the ZnO nanorods are of hexagonal wurtzite structure. Further, as-prepared samples are characterized by Scanning Electron Microscopy (SEM), Photoluminescence (PL) spectroscopy and UV-Vis spectroscopy. The surface plasmon resonance response of Ag/ZnO is found at 420 nm. The photocatalytic activities of the samples are evaluated by photocatalytic decolorization of methyl orange (MO) dye with UV irradiation. The degradation rate of MO increases with increase in irradiation time. The degradation of MO follows the first order kinetics. The photocatalytic activity of Ag/ZnO heterostructure is found to be more than that of ZnO nanorods. The PL intensity of ZnO nanorods is stronger than that of the Ag/ZnO heterostructure. The strong PL intensity indicates high recombination rate of photoinduced charge carriers which lowers the photocatalytic activity of ZnO nanorods. The charge carrier recombination is effectively suppressed by introducing Ag nanoparticles on the surface of the ZnO nanorods. This study demonstrates a strong relationship between PL intensity and photocatalytic activity. (paper)

Time-resolved photoluminescence investigation of (Mg, Zn) O alloy growth on a non-polar plane

Science.gov (United States)

Mohammed Ali, Mohammed Jassim; Chauveau, J. M.; Bretagnon, T.

2018-04-01

Excitons recombination dynamics in ZnMgO alloy have been studied by time-resolved photoluminescence according to temperature. At low temperature, localisation effects of the exciton are found to play a significant role. The photoluminescence (PL) decays are bi-exponential. The short lifetime has a constant value, whereas the long lifetime shows a dependency with temperature. For temperature higher than 100 K the declines show a mono-exponential decay. The PL declines are dominated by non-radiative process at temperatures above 150 K. The PL lifetime dependancy with temperature is analysed using a model including localisation effects and non-radiative recombinations.

Strong Mechanoluminescence from Oxynitridosilicate Phosphors

Energy Technology Data Exchange (ETDEWEB)

Zhang Lin; Xu Chaonan; Yamada, Hiroshi, E-mail: cn-xu@aist.go.jp [National Institute of Advanced Industrial Science and Technology (AIST), 807-1 Shuku, Tosu, Saga 841-0052 (Japan)

2011-10-29

We successfully developed a novel Mechanoluminescence (ML) material with water resistance, oxynitridosilicate; BaSi{sub 2}O{sub 2}N{sub 2}: Eu{sup 2+}. The crystal structure, photoluminescence (PL) and ML properties were characterized. The ML of BaSi{sub 2}O{sub 2}N{sub 2}: Eu{sup 2+} is so strong that the blue-green emission can be observed by the naked eyes clearly. In addition, it shows superior water resistance property. No changes were found in the ML intensities during the total water treatment test.

Photoconductance-calibrated photoluminescence lifetime imaging of crystalline silicon

International Nuclear Information System (INIS)

Herlufsen, Sandra; Schmidt, Jan; Hinken, David; Bothe, Karsten; Brendel, Rolf

2008-01-01

We use photoluminescence (PL) measurements by a silicon charge-coupled device camera to generate high-resolution lifetime images of multicrystalline silicon wafers. Absolute values of the excess carrier density are determined by calibrating the PL image by means of contactless photoconductance measurements. The photoconductance setup is integrated in the camera-based PL setup and therefore identical measurement conditions are realised. We demonstrate the validity of this method by comparison with microwave-detected photoconductance decay measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2008], Wiley Periodicals, Inc.)

Photoluminescence properties of a novel conjugate of water-soluble CdTe quantum dots to guanine

Energy Technology Data Exchange (ETDEWEB)

Feng Xuejiao [North-East Normal University, Changchun 130024 (China); Shang, Qingkun, E-mail: shangqk995@nenu.edu.c [North-East Normal University, Changchun 130024 (China); Liu Hongjian [Relia Diagnostic Systems, Burlingame, CA 94010 (United States); Wang Wenlan; Wang Zhidan; Liu Junyu [North-East Normal University, Changchun 130024 (China)

2010-04-15

A novel conjugate of water-soluble CdTe quantum dots to a small biomolecule guanine has been obtained in aqueous phase. The photoluminescence property and the stability of the conjugate increased comparing to CdTe QDs. The interaction between CdTe QDs and guanine was studied by TEM, fluorescence microscope and photoluminescence (PL), IR, UV-Vis spectra. The effects of reflux time, pH value, ionic strength, and the ratio of CdTe QDs to guanine on the photoluminescence properties of conjugate were investigated in detail. The results show that guanine has a great influence on both the photoluminescence property and stability of thioglycolic acid-stabilized CdTe QDs. The formation of coordination and hydrogen bond between guanine molecules and CdTe including thioglycolic acid on its surface may effectively enhance the PL intensity and stability of CdTe QDs. The maximum PL intensity of the conjugate was obtained on the condition with lower ionic strength, less than 30 min reflux time, neutral pH value and 6/1 as molar ratio of guanine to CdTe.

Photoluminescence of monovalent indium centres in phosphate glass

OpenAIRE

Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

2015-01-01

Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL ...

Microwave Assisted Synthesis and Photoluminescence Properties of ...

Indian Academy of Sciences (India)

46

earth doping of ZnS would not lead to sufficiently bright PL materials. As a result, several new ... photoluminescence characteristics of ZnS nanoparticles doped with Pb2+. New luminescent ..... Papers, San Francisco, CA, USA, 249. [6] Tanaka ...

Intrinsic and extrinsic photoluminescence in the NH sub 4 MnCl sub 3 cubic perovskite: a spectroscopic study

CERN Document Server

Hernandez, I

2003-01-01

This work investigates the photoluminescence (PL) properties of the cubic chloroperovskite NH sub 4 MnCl sub 3. Like in most concentrated materials, the Mn sup 2 sup + PL which is located at 2.10 eV at T = 10 K strongly depends on the temperature. Optical absorption (OA), emission, and excitation spectroscopy, as well as lifetime measurements, performed on NH sub 4 MnCl sub 3 indicate that the PL is mainly intrinsic at T = 10 K and consists of a broad band located at 2.10 eV. Above this temperature, the PL gradually transforms to extrinsic PL due to exciton migration and subsequent trapping. Further temperature increase above 100 K yields transfer to killers of excitation which are responsible for the PL quenching, and hence the absence of PL at ambient conditions. The exciton traps are identified with perturbed Mn sup 2 sup + sites with the effective activation energy of 52 meV, whilst the activation energy for energy transfer is 47 meV. The existence of these traps has been directly revealed by time-resolve...

SYNTHESIS AND PHOTOLUMINESCENCE STUDIES ON ZINC OXIDE NANOWIRES

Directory of Open Access Journals (Sweden)

Nguyen Ngoc Long

2017-11-01

Full Text Available Semiconductor single crystal ZnO nanowires have been successfully synthesized by a simple method based on thermal evaporation of ZnO powders mixed with graphite. Metallic catalysts, carrying gases, and vacuum conditions are not necessary. The x-ray diffraction (XRD analysis shows that the ZnO nanowires are highly crystallized and have a typical wurtzite hexagonal structure with lattice constants a = 0.3246 nm and c = 0.5203 nm. The scanning electron microscopy (SEM images of nanowires indicate that diameters of the ZnO nanowires normally range from 100 to 300 nm and their lengths are several tens of micrometers. Photoluminescence (PL and photoluminescence excitation (PLE spectra of the nanowires were measured in the range of temperature from 15 K to the room temperature. Photoluminescence spectra at low temperatures exhibit a group of ultraviolet (UV narrow peaks in the region 368 nm ~ 390 nm, and a blue-green very broad peak at 500 nm. Origin of the emission lines in PL spectra and the lines in PLE spectra is discussed.

Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

Energy Technology Data Exchange (ETDEWEB)

Ananthakumar, S. [Crystal Growth Centre, Anna University, Chennai 600025 (India); Jayabalan, J., E-mail: jjaya@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Singh, Asha; Khan, Salahuddin [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Babu, S. Moorthy [Crystal Growth Centre, Anna University, Chennai 600025 (India); Chari, Rama [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2016-01-15

The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a 'UCPL bright point' in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

Size dependence of upconversion photoluminescence in MPA capped CdTe quantum dots: Existence of upconversion bright point

International Nuclear Information System (INIS)

Ananthakumar, S.; Jayabalan, J.; Singh, Asha; Khan, Salahuddin; Babu, S. Moorthy; Chari, Rama

2016-01-01

The photoluminescence (PL) from semiconductor quantum dots can show a “PL bright point”, that is the PL from as prepared quantum dots is maximum at a particular size. In this work we show that, for CdTe quantum dots, upconversion photoluminescence (UCPL) originating from nonlinear absorption shows a similar “UCPL bright point”. The PL and UCPL bright points occur at nearly the same size. The existence of a UCPL bright point has important implications for upconversion microscopy applications. - Highlights: • The size dependence of the upconversion photoluminescence (UCPL) spectrum of CdTe quantum dots has been reported. • We show that the UCPL from the CdTe quantum dots is highest at a particular size. • Thus the occurrence of a "UCPL bright point" in CdTe quantum dots has been demonstrated. • It has been shown that the UCPL bright point occurs at nearly the same size as a normal bright point.

Size Controlled CaF2 Nanocubes and Their Dosimetric Properties Using Photoluminescence Technique

Directory of Open Access Journals (Sweden)

Najlaa D. Alharbi

2015-01-01

Full Text Available A new synthetic chemical coprecipitation route for the preparation of well-crystallized size controlled nano- and microcrystalline cubes of CaF2 is reported. Crystalline cubes in the range of 2 μm–20 nm could be synthesized and their sizes were controlled by varying the solvent : cosolvent ratio. The as-synthesized CaF2 nanocubes were characterized by different techniques. Photoluminescence (PL emission spectrum of CaF2 nanocrystalline powder showed strong emission band at 415 nm. Moreover, the effect of Eu as a dopant on the emission spectrum of CaF2 was investigated. This dopant was found to get incorporated in its Eu2+ and Eu3+ forms. The as-produced nanocubes were exposed to UV irradiation and the corresponding PL emission was studied. Excellent results are obtained, where CaF2:Eu nanocubes were found to be highly sensitive and might be suitable for esteeming the doses of UV irradiation using the PL technique.

Excess carrier depths profiles in Cu(In,Ga)(S,Se){sub 2} absorbers from spectral photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Koenne, Nils; Knabe, Sebastian; Bauer, Gottfried H. [Institute of Physics, CvO University Oldenburg (Germany); Witte, Wolfram; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany); Meeder, Alexander [SULFURCELL Solartechnik GmbH, Berlin (Germany)

2011-07-01

The polycrystalline structure of chalcopyrite absorbers, such as Cu(In,Ga)(S,Se){sub 2} and their complex metallurgical composition results in lateral and depth dependent inhomogeneities. The spectral photoluminescence (PL) recorded from front and rear side of these chalcopyrite thin-film systems shows a distinct different behavior in particular of the high energy PL-wing which is strongly governed by absorption/emission approaching unity, as well as by re-absorption of emitted PL-photons and their depth dependent origin, say excess carrier depth profile. We define a contrast parameter for the high energy PL-yield of the fluxes recorded from front side and rear side and we proof the origin of the experimental contrast with numerical simulations of spectral PL-yields via Planck's generalized law for different depth profiles of excess carriers and band gap/absorption coefficients. By comparison of experimental contrast parameters with results from numerical simulations we conclude a set of regimes of realistic combinations of depth profiles for excess carriers and band gaps.

Red photoluminescence and band edge shift from ZnO thin films

International Nuclear Information System (INIS)

Marotti, Ricardo E.; Badan, Juan A.; Quagliata, Eduardo; Dalchiele, Enrique A.

2007-01-01

The red photoluminescence (PL) band (peaked between 610 and 640 nm) from electrochemically deposited ZnO thin films is studied. The absorption coefficient is obtained from diffuse reflectance measurements. The absorption band edge depends on deposition conditions. The PL peak follows the shift of the band edge. A similar correlation appears when cooling down to 20 K. This suggests that PL is due to a transition from an intrinsic shallow state to an intrinsic deep state. Comparing against ZnO samples showing green PL, the shallow nature of the state is confirmed

Gold nanoparticles–gelatinhybrid fibers with bright photoluminescence

DEFF Research Database (Denmark)

Liu, Shuiping; Tan, Lianjiang; Li, Xiaoqiang

2014-01-01

acid and gave rise to in situ synthesis of GNPs in the spinning solutions. The GNPs–gelatin fibers were fabricated by electrospinning the spinning solutions. The GNPs were encapsulated in the fibers, which endowed the fibers photoluminescence (PL) characteristics. A variety of experiments were...

Effect of illumination on photoluminescence properties of porous silicon

International Nuclear Information System (INIS)

Naddaf, M.; Hamadeh, H.

2008-11-01

Porous silicon (PS) layers were formed by photo-electrochemical etching of both p-type and n-type single crystal wafers in HF based solution. During the etching process, the silicon wafer was illuminated by a halogen lamp light guided by an optical fiber through a monochromator or diode lasers at different power density and wavelengths (480,533,580 and 635 nm). The optical and structural properties of the prepared PS samples have been investigated by using temperature dependent photoluminescence (PL) spectroscopy, Fourier Transform Infrared (FTIR) spectroscopy, contact angle (CA) measurements, optical microscope and atomic force microscope (AFM). Beside the strong red-yellow PL band, a blue PL band has been observed only in the PS samples formed under the illumination with low power and short wavelengths (480-580 nm) light. In the near infrared (IR) spectral range, a new PL band at 850 nm was observed in p-type PS samples, which prepared under darkness or illumination with 635 nm of low power light. Temperature dependent PL measurements showed that, in contrast to the main IR PL band at around 1100 nm, the intensity of this new band increases on increasing the temperature. These changes in the PL properties was correlated with the illumination induced-structural and morphological modifications in the PS skeleton. In particular, the FTIR analysis showed that the chemical groups and bonds constituting the PS skeleton, such as, SiH, SiO bonds and silanol SiOH group play key role in deciding the PL emission intensity and blue shift. The study proved that the illumination parameters during the photo-electrochemical etching process can be utilized for tailoring a porous layer with novel optical and structural properties. (Authors)

Effect of illumination on photoluminescence properties of porous silicon

International Nuclear Information System (INIS)

Naddaf, M.; Hamadeh, H.

2009-01-01

Porous silicon (PS) layers were formed by photo-electrochemical etching of both p-type and n-type single crystal wafers in HF based solution. During the etching process, the silicon wafer was illuminated by a halogen lamp light guided by an optical fiber through a monochromator or diode lasers at different power density and wavelengths (480,533,580 and 635 nm). The optical and structural properties of the prepared PS samples have been investigated by using temperature dependent photoluminescence (PL) spectroscopy, Fourier Transform Infrared (FTIR) spectroscopy, contact angle (CA) measurements, optical microscope and atomic force microscope (AFM). Beside the strong red-yellow PL band, a blue PL band has been observed only in the PS samples formed under the illumination with low power and short wavelengths (480-580 nm) light. In the near infrared (IR) spectral range, a new PL band at 850 nm was observed in p-type PS samples, which prepared under darkness or illumination with 635 nm of low power light. Temperature dependent PL measurements showed that, in contrast to the main IR PL band at around 1100 nm, the intensity of this new band increases on increasing the temperature. These changes in the PL properties was correlated with the illumination induced-structural and morphological modifications in the PS skeleton. In particular, the FTIR analysis showed that the chemical groups and bonds constituting the PS skeleton, such as, SiH, SiO bonds and silanol SiOH group play key role in deciding the PL emission intensity and blue shift. The study proved that the illumination parameters during the photo-electrochemical etching process can be utilized for tailoring a porous layer with novel optical and structural properties. (Authors)

Mechanoluminescence and photoluminescence of Pr3+ activated KMgF3 phosphor

International Nuclear Information System (INIS)

Dhoble, S.J.; Kher, R.S.; Furetta, C.

2003-01-01

A Czochralski method for the preparation of crystalline KMgF 3 : Pr phosphors are reported. Photoluminescence (PL) and mechanoluminescence (ML) characteristics are studied. Photoluminescence of Pr 3+ activated KMgF 3 shows the strong emission of Pr 3+ ions were observed at 498 and 650 nm by excitation of 213 mn. ML of KMgF 3 : Pr 3+ shows two peaks, which have been observed in ML intensity versus time curve. The ML peak shows the recombination of electrons with free radical (anion radical produced by γ-irradiation) released from two type traps during the mechanical pressure applied on KMgF 3 : Pr 3+ phosphor. It has a supra linear ML response with γ-ray exposure and a negligible fading. These properties of phosphor should be suitable in dosimetry of ionization relation using ML technique. Therefore the KMgF 3 : Pr 3+ phosphor proposed for ML dosimetry of ionization radiations. (Author)

Photoluminescence decay kinetics of doped ZnS nanophosphors

International Nuclear Information System (INIS)

Sharma, Rajesh; Bhatti, H S

2007-01-01

Doped nanophosphor samples of ZnS:Mn, ZnS:Mn, Co and ZnS:Mn, Fe were prepared using a chemical precipitation method. Photoluminescence (PL) spectra were obtained and lifetime studies of the nanophosphors were carried out at room temperature. To the best of our knowledge, there are very few reports on the photoluminescence investigations of Co-doped or Fe-doped ZnS:Mn nanoparticles in the literature. Furthermore, there is no report on luminescence lifetime shortening of ZnS:Mn nanoparticles doped with Co or Fe impurity. Experimental results showed that there is considerable change in the photoluminescence spectra of ZnS:Mn nanoparticles doped with X (X = Co, Fe). The PL spectra of the ZnS:Mn, Co nanoparticle sample show three peaks at 410, 432 and 594 nm, while in the case of the ZnS:Mn, Fe nanoparticle sample the peaks are considerably different. The lifetimes are found to be in microsecond time domain for 594 nm emission, while nanosecond order lifetimes are obtained for 432 and 411 nm emission in ZnS:Mn, X nanophosphor samples. These lifetimes suggest a new additional decay channel of the carrier in the host material

Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xN x layers

International Nuclear Information System (INIS)

Bousbih, F.; Bouzid, S.B.; Hamdouni, A.; Chtourou, R.; Harmand, J.C.

2005-01-01

A set of GaAs 1-x N x samples with small nitrogen content were investigated by photoluminescence (PL) measurements as function of irradiance in order to investigate the effect of rapid thermal annealing (RTA) on photoluminescence (PL) properties. The analysis of PL spectra as function of irradiance and nitrogen content shows that the PL spectra associated to the GaAs 1- x N x layers are the result of the nitrogen localized state recombination. The results are examined as a consequence of a rapid thermal annealing (RTA). The variation of the emission band peak energy (E p ), at 10 K as a function of irradiance, is fitted by a theoretical model taking into account two types of nitrogen localized states. The variation of the PL intensity versus irradiance in the range from 1.59 to 159 W/cm 2 for different GaAs 1-x N x samples confirm that the PL spectra result from the nitrogen localized state recombination

Strong broad green UV-excited photoluminescence in rare earth (RE = Ce, Eu, Dy, Er, Yb) doped barium zirconate

Energy Technology Data Exchange (ETDEWEB)

Borja-Urby, R. [Grupo de Espectroscopia de Materiales Avanzados y Nanoestructurados (EMANA), Centro de Investigaciones en Optica A. C., Leon, Gto. 37150 (Mexico); Diaz-Torres, L.A., E-mail: ditlacio@cio.mx [Grupo de Espectroscopia de Materiales Avanzados y Nanoestructurados (EMANA), Centro de Investigaciones en Optica A. C., Leon, Gto. 37150 (Mexico); Salas, P. [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, A.P. 1-1010, Queretaro, Qro. 76000 (Mexico); Angeles-Chavez, C. [Instituto Mexicano del Petroleo, Ciudad de Mexico, D. F. 07730 (Mexico); Meza, O. [Grupo de Espectroscopia de Materiales Avanzados y Nanoestructurados (EMANA), Centro de Investigaciones en Optica A. C., Leon, Gto. 37150 (Mexico)

2011-10-25

Highlights: > Trivalent rare earth (RE) substitution on Zr{sup 4+} sites in BaZrO{sub 3} lead to band gap narrowing. > RE substitution lead to enhanced blue-green intrinsic emission of nanocrystalline BaZrO{sub 3} > Blue-green hue of BaZrO3:RE depends on RE dopant and excitation UV wavelength > BaZrO3: Dy{sup 3+} PL chromatic coordinates correspond to pure white color coordinates of CIE 1931 model - Abstract: The wet synthesis hydrothermal method at 100 deg. C was used to elaborate barium zirconate (BaZrO{sub 3}) unpurified with 0.5 mol% of different rare earth ions (RE = Yb, Er, Dy, Eu, Ce). Morphological, structural and UV-photoluminescence properties depend on the substituted rare earth ionic radii. While the crystalline structure of RE doped BaZrO{sub 3} remains as a cubic perovskite for all substituted RE ions, its band gap changes between 4.65 and 4.93 eV. Under 267 nm excitation the intrinsic green photoluminescence of the as synthesized BaZrO{sub 3}: RE samples is considerably improved by the substitution on RE ions. For 1000 deg. C annealed samples, under 267 nm, the photoluminescence is dominated by the intrinsic BZO emission. It is interesting to notice that Dy{sup 3+}, Er{sup 3+} and Yb{sup 3+} doped samples present whitish emissions that might be useful for white light generation under 267 nm excitation. CIE color coordinates are reported for all samples.

Photoluminescence of Co: ZnNiO and Zr: ZnNiO nanocomposites capped with biodegradable polymer poly (2-ethyl-2-oxazoline)

Science.gov (United States)

John, Sam; George, James Baben; Joseph, Abraham

2018-05-01

The optical properties of the semiconducting nanomaterials has a wide variety of applications in the biological and industrial fields, which include the synthesis of UV laser, light emitting diodes, solar cells, gas sensors, piezoelectric transducers etc. Among the various types of optical properties, luminescence especially photoluminescence (PL) of metal oxides are more prominently studied. This is because PL spectrum is an effective way to investigate the electronic structure, optical and photochemical properties of semiconductor materials which deciphers information such as surface oxygen vacancies, defects, efficiency of charge carrier trapping, immigration, transfer etc. To overcome the drawbacks in luminescence studies of metal oxide nanomaterials, polymer technology has also been incorporated. The scientists found that the doping of some elements into the polymer capped ZnO nanocomposites enhanced the luminescence properties of the compound. In the current study, we are investigating the photoluminescence properties of ZnO nanocomposites capped with a biodegradable polymer poly (2-ethyl 2-oxazoline) and doped with the elements Cobalt and Zirconium. We obtained many strong fluorescence peaks in the visible and UV regions in the PL spectrum and UV absorption spectroscopy.

Photoluminescence from CdxHg1-xTe

International Nuclear Information System (INIS)

Breivik, M; Selvig, E; Tonheim, C R; Brendhagen, E; Brudevoll, T; Rheenen, A D van; Steen, H; Nicolas, S; Lorentzen, T; Haakenaasen, R

2008-01-01

We present important aspects of photoluminescence (PL) of Cd x Hg 1-x Te in the infrared part of the spectrum where background thermal radiation significantly affects the PL spectrum. We show how the background spectrum can be removed from the data. We also show how the wavelength of the excitation laser affects the relative intensity of the PL peaks from a multi-layer structure. Finally, we present temperature dependent PL of a Cd 0.36 Hg 0.64 Te/Cd 0.61 Hg 0.39 Te multiple quantum well structure grown on a 4 μm thick Cd 0.36 Hg 0.64 Te buffer layer. We attribute the low temperature peak from the buffer layer to impurities. The impurity levels are depopulated as the temperature increases, resulting in a decreased PL peak intensity. Above ∼200 K a band-to-band peak from the buffer layer is observed. The quantum well peak persists up to ∼200 K

Photoluminescence properties of anodic aluminum oxide formed in a mixture of ammonium fluoride and oxalic acid

Science.gov (United States)

Li, Shou-Yi; Wang, Jian; Li, Yan

2017-06-01

Highly ordered anodic aluminum oxide (AAO) membranes are fabricated electrochemically in an electrolyte mixture with various concentrations of C2H2O4 or NH4F. Photoluminescence (PL) properties of AAO membranes have been investigated before and after annealing in the range from 300°C to 650°C. X-ray diffraction reveals the amorphous nature of AAO membranes. Energy dispersive spectroscopy indicates the presence of fluorine species incorporated in oxide membranes during the anodizing. PL measurements show a strong PL band in the wavelength range of 350 to 550 nm. With the increase of the concentration of the NH4F or C2H2O4 in the electrolyte mixture, the peak positions of the PL bands have a blueshift or redshift and the intensities have a maximum value. As indicated by the PL excitation spectra, there are two excitation peaks of 285 and 330 nm, which can account for the PL emission band. We have proposed that the PL originates from optical transitions in two kinds of centers that are related to oxygen vacancies, F+ (285 nm) and F (330 nm). This work is not only beneficial to further understanding of the light-emitting property of AAO membranes but also enlarges the application scope.

Humidity-Induced Photoluminescence Hysteresis in Variable Cs/Br Ratio Hybrid Perovskites.

Science.gov (United States)

Howard, John M; Tennyson, Elizabeth M; Barik, Sabyasachi; Szostak, Rodrigo; Waks, Edo; Toney, Michael F; Nogueira, Ana F; Neves, Bernardo R A; Leite, Marina S

2018-06-12

Hybrid organic-inorganic perovskites containing Cs are a promising new material for light-absorbing and light-emitting optoelectronics. However, the impact of environmental conditions on their optical properties is not fully understood. Here, we elucidate and quantify the influence of distinct humidity levels on the charge carrier recombination in Cs x FA 1- x Pb(I y Br 1- y ) 3 perovskites. Using in situ environmental photoluminescence (PL), we temporally and spectrally resolve light emission within a loop of critical relative humidity (rH) levels. Our measurements show that exposure up to 35% rH increases the PL emission for all Cs (10-17%) and Br (17-38%) concentrations investigated here. Spectrally, samples with larger Br concentrations exhibit PL redshift at higher humidity levels, revealing water-driven halide segregation. The compositions considered present hysteresis in their PL intensity upon returning to a low-moisture environment due to partially reversible hydration of the perovskites. Our findings demonstrate that the Cs/Br ratio strongly influences both the spectral stability and extent of light emission hysteresis. We expect our method to become standard when testing the stability of emerging perovskites, including lead-free options, and to be combined with other parameters known for affecting material degradation, e.g., oxygen and temperature.

Photoluminescence dynamics of weakly confined excitons in GaAs thin films

International Nuclear Information System (INIS)

Kanno, Atsushi; Katouf, Redouane; Kojima, Osamu; Ishi-Hayase, Junko; Sasaki, Masahide; Tsuchiya, Masahiro; Isu, Toshiro

2008-01-01

We investigate the dynamics of weakly confined excitons in GaAs thin films measured by time-resolved photoluminescence (PL) technique. When excitation energy was above the resonant energy of the exciton, a long PL rise time of about 200 ps was observed. It is considered that an exciton formation process from excited continuum energy states to discrete energy states of the exciton in the thin film causes the slow PL rise. The observed PL decay time constant was about 14 ns due to high quality fabricated samples. The observed population dynamics can be surely ascribed to the specific features of weakly confined excitons

Photoluminescence Enhancement in Formamidinium Lead Iodide Thin Films

NARCIS (Netherlands)

Fang, Hong-Hua; Wang, Feng; Adjokatse, Sampson; Zhao, Ni; Loi, Maria Antonietta

2016-01-01

Formamidinium lead iodide (FAPbI(3)) has a broader absorption spectrum and better thermal stability than the most famous methylammonium lead iodide, thus exhibiting great potential for photovoltaic applications. In this report, the light-induced photoluminescence (PL) evolution in FAPbI(3) thin

Surface effects on the photoluminescence of Si quantum dots

International Nuclear Information System (INIS)

Wang, Chiang-Jing; Tsai, Meng-Yen; Chi, Cheng Chung; Perng, Tsong-Pyng

2009-01-01

Si quantum dots (SiQDs) with sizes ranging from 5 to 20 nm were fabricated by vapor condensation. They showed red photoluminescence (PL) in vacuum with the peak located at around 750 nm. After the specimen was exposed to air, the PL intensity became higher, and continued to increase during the PL test with a cycling of vacuum-air-vacuum. In pure oxygen, the PL intensity exhibited an irreversible decrease, while in nitrogen a smaller amount of reversible increase of PL intensity was observed. Furthermore, the PL intensity exhibited a remarkable enhancement if the SiQDs were treated with water. With HF treatment, the PL peak position showed a blue-shift to 680 nm, and was recovered after subsequent exposure to air. Si-O-H complexes were suggested to be responsible for this red luminescence. The irreversible decrease of PL intensity due to oxygen adsorption was speculated to be caused by the modification of chemical bonds on the surface. In the case of nitrogen adsorption, the PL change was attributed to the surface charging during adsorption.

CVD grown 2D MoS{sub 2} layers: A photoluminescence and fluorescence lifetime imaging study

Energy Technology Data Exchange (ETDEWEB)

Oezden, Ayberk; Madenoglu, Buesra [Department of Materials Science and Engineering, Faculty of Engineering, Anadolu University, Eskisehir (Turkey); Sar, Hueseyin; Ay, Feridun; Perkgoez, Nihan Kosku [Department of Electrical and Electronics Engineering, Faculty of Engineering, Anadolu University, Eskisehir (Turkey); Yeltik, Aydan [Department of Physics, UNAM Institute of Materials Science and Nanotechnology, Bilkent University, Ankara (Turkey); Sevik, Cem [Department of Mechanical Engineering, Faculty of Engineering, Anadolu University, Eskisehir (Turkey)

2016-11-15

In this letter, we report on the fluorescence lifetime imaging and accompanying photoluminescence properties of a chemical vapour deposition (CVD) grown atomically thin material, MoS{sub 2}. μ-Raman, μ-photoluminescence (PL) and fluorescence lifetime imaging microscopy (FLIM) are utilized to probe the fluorescence lifetime and photoluminescence properties of individual flakes of MoS{sub 2} films. Usage of these three techniques allows identification of the grown layers, grain boundaries, structural defects and their relative effects on the PL and fluorescence lifetime spectra. Our investigation on individual monolayer flakes reveals a clear increase of the fluorescence lifetime from 0.3 ns to 0.45 ns at the edges with respect to interior region. On the other hand, investigation of the film layer reveals quenching of PL intensity and lifetime at the grain boundaries. These results could be important for applications where the activity of edges is important such as in photocatalytic water splitting. Finally, it has been demonstrated that PL mapping and FLIM are viable techniques for the investigation of the grain-boundaries. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Diameter Control and Photoluminescence of ZnO Nanorods from Trialkylamines

Directory of Open Access Journals (Sweden)

Tamar Andelman

2007-01-01

Full Text Available A novel solution method to control the diameter of ZnO nanorods is reported. Small diameter (2-3 nm nanorods were synthesized from trihexylamine, and large diameter (50–80 nm nanorods were synthesized by increasing the alkyl chain length to tridodecylamine. The defect (green emission of the photoluminescence (PL spectra of the nanorods varies with diameter, and can thus be controlled by the diameter control. The small ZnO nanorods have strong green emission, while the large diameter nanorods exhibit a remarkably suppressed green band. We show that this observation supports surface oxygen vacancies as the defect that gives rise to the green emission.

Photoluminescence up-conversion in five Inx(Al0.17Ga0.83)1-xAs/ Al0.17Ga0.83As quantum wells with different x values

DEFF Research Database (Denmark)

Machida, S.; Tadakuma, T.; Satake, A.

Photoluminescence (PL) up-conversion in a unique system with five different quantum wells has been investigated. Anti-Stokes PL intensity observed shows dramatic dependence on where carriers are resonantly photoexcited, indicating nonlinear processes with spatial position dependence.......Photoluminescence (PL) up-conversion in a unique system with five different quantum wells has been investigated. Anti-Stokes PL intensity observed shows dramatic dependence on where carriers are resonantly photoexcited, indicating nonlinear processes with spatial position dependence....

Characterization and photoluminescence studies of CdTe ...

Indian Academy of Sciences (India)

Administrator

Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

Highly Controlled Synthesis and Super-Radiant Photoluminescence of Plasmonic Cube-in-Cube Nanoparticles.

Science.gov (United States)

Park, Jeong-Eun; Kim, Sungi; Son, Jiwoong; Lee, Yeonhee; Nam, Jwa-Min

2016-12-14

The plasmonic properties of metal nanostructures have been heavily utilized for surface-enhanced Raman scattering (SERS) and metal-enhanced fluorescence (MEF), but the direct photoluminescence (PL) from plasmonic metal nanostructures, especially with plasmonic coupling, has not been widely used as much as SERS and MEF due to the lack of understanding of the PL mechanism, relatively weak signals, and the poor availability of the synthetic methods for the nanostructures with strong PL signals. The direct PL from metal nanostructures is beneficial if these issues can be addressed because it does not exhibit photoblinking or photobleaching, does not require dye-labeling, and can be employed as a highly reliable optical signal that directly depends on nanostructure morphology. Herein, we designed and synthesized plasmonic cube-in-cube (CiC) nanoparticles (NPs) with a controllable interior nanogap in a high yield from Au nanocubes (AuNCs). In synthesizing the CiC NPs, we developed a galvanic void formation (GVF) process, composed of replacement/reduction and void formation steps. We unraveled the super-radiant character of the plasmonic coupling-induced plasmon mode which can result in highly enhanced PL intensity and long-lasting PL, and the PL mechanisms of these structures were analyzed and matched with the plasmon hybridization model. Importantly, the PL intensity and quantum yield (QY) of CiC NPs are 31 times and 16 times higher than those of AuNCs, respectively, which have shown the highest PL intensity and QY reported for metallic nanostructures. Finally, we confirmed the long-term photostability of the PL signal, and the signal remained stable for at least 1 h under continuous illumination.

Photoluminescence of Se-related oxygen deficient center in ion-implanted silica films

International Nuclear Information System (INIS)

Zatsepin, A.F.; Buntov, E.A.; Pustovarov, V.A.; Fitting, H.-J.

2013-01-01

The results of low-temperature time-resolved photoluminescence (PL) investigation of thin SiO 2 films implanted with Se + ions are presented. The films demonstrate an intensive PL band in the violet spectral region, which is attributed to the triplet luminescence of a new variant of selenium-related oxygen deficient center (ODC). The main peculiarity of the defect energy structure is the inefficient direct optical excitation. Comparison with spectral characteristics of isoelectronic Si-, Ge- and SnODCs show that the difference in electronic properties of the new center is related to ion size factor. It was established that the dominating triplet PL excitation under VUV light irradiation is related to the energy transfer from SiO 2 excitons. A possible model of Se-related ODC is considered. -- Highlights: • The low-temperature photoluminescence of thin SiO 2 films implanted with Se + ions was studied. • The 3.4 eV PL band was attributed to triplet luminescence of Se-related ODC. • The peculiarity of SeODC electronic properties is related to ion size factor. • The dominating VUV excitation of triplet PL is related to energy transfer from SiO 2 excitons. • A possible model of Se-related ODC is considered

Conditions giving rise to intense visible room temperature photoluminescence in SrWO4 thin films: the role of disorder

International Nuclear Information System (INIS)

Orhan, E.; Anicete-Santos, M.; Maurera, M.A.M.A.; Pontes, F.M.; Paiva-Santos, C.O.; Souza, A.G.; Varela, J.A.; Pizani, P.S.; Longo, E.

2005-01-01

The nature of intense visible photoluminescence at room temperature of SrWO 4 (SWO) non-crystalline thin films is discussed in the light of experimental results and theoretical calculations. The SWO thin films were synthesized by the polymeric precursors method. Their structural properties have been obtained by X-ray diffraction data and the corresponding photoluminescence (PL) spectra have been measured. The UV-vis optical spectra measurements suggest the creation of localized states in the disordered structure. The photoluminescence measurements reveal that the PL changes with the degree of disorder in the SWO thin film. To understand the origin of visible PL at room temperature in disordered SWO, we performed quantum-mechanical calculations on crystalline and disordered SWO periodic models. Their electronic structures are analyzed in terms of DOS, band dispersion and charge densities. We used DFT method with the hybrid non-local B3LYP approximation. The polarization induced by the symmetry break and the existence of localized levels favors the creation of trapped holes and electrons, giving origin to the room temperature photoluminescence phenomenon in the SWO thin films

Photoluminescence properties of cerium oxide nanoparticles as a function of lanthanum content

International Nuclear Information System (INIS)

Deus, R.C.; Cortés, J.A.; Ramirez, M.A.; Ponce, M.A.; Andres, J.; Rocha, L.S.R.

2015-01-01

Highlights: • CeO 2 nanoparticles were obtained by microwave-hydrothermal method. • Rietveld refinement reveals a cubic structure. • KOH mineralizer agent exhibit weak agglomeration at low temperature and shorter time. - Abstract: The structural and photoluminescent properties at room temperature of CeO 2 and La-doped CeO 2 particles were undertaken. The obtained particles were synthesized by a microwave-assisted hydrothermal method (MAH) under different lanthanum contents. X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Fourier transform Raman (FT-Raman), Ultra-violet spectroscopy (UV–vis) and photoluminescence (PL) measurements were carried out. XRD revealed that the powders are free of secondary phases and crystallize in the cubic structure. Raman data show that increasing La doping content increase oxygen vacancies due to lattice expansion. The UV/vis absorption spectroscopy suggested the presence of intermediate energy levels in the band gap of structurally ordered powders. Lanthanum addition creates oxygen vacancies and shifts the photoluminescence in the low energy range leading to intense PL emission

Photoluminescence properties of the composite of porous alumina and poly (2,5-dibutoxy-1,4 phenylenevinylene)

International Nuclear Information System (INIS)

Zhao Yi; Yang Deren; Zhou Chengyao; Yang Qing; Que Duanlin

2003-01-01

The spin coating method was used to assemble polymer (Poly (2,5-dibutoxy-1,4-phenylenevinylene)) (DBO-PPV) into the pores of porous alumina which was prepared by anodization. Four peaks in the photoluminescence (PL) spectra of the composite, with contributions from the DBO-PPV and porous alumina, were found. It was also found that the light emitting from the porous alumina could excite the photoluminescence of DBO-PPV. The nanometer effect of the porous alumina can lead to a blue shift of 90 nm of the PL peaks of DBO-PPV

Photoluminescence quenching of chemically functionalized porous silicon by a ruthenium cluster

Energy Technology Data Exchange (ETDEWEB)

Boukherroub, R.; Wayner, D.D.M. [Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ontario (Canada); Lockwood, D.J. [Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario (Canada); Zargarian, D. [Chemistry Department, University of Montreal, C.P. 6128, succursale, Centre-ville, Montreal QC (Canada)

2003-05-01

This paper describes photoluminescence (PL) quenching of hydrogen-terminated and chemically derivatized porous silicon (PSi) nanostructures by a green ruthenium cluster (I). Chemisorption of freshly prepared PSi surfaces in a hexane solution of the Ru cluster for several days at room temperature led to a complete quenching of the PSi PL. The only visible PL was due to the original PL of the cluster. When the PSi surface functionalized with undecylenic acid was immersed in the same hexane solution of (I), the PSi PL was completely quenched and accompanied with a shift to a lower energy of the cluster PL. This shift was assigned to the formation of an ester linkage resulting from the nucleophilic attack of the PO anion of the cluster on the terminal acid functional group. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

Photoluminescence quenching of chemically functionalized porous silicon by a ruthenium cluster

Science.gov (United States)

Boukherroub, R.; Wayner, D. D. M.; Lockwood, D. J.; Zargarian, D.

2003-05-01

This paper describes photoluminescence (PL) quenching of hydrogen-terminated and chemically derivatized porous silicon (PSi) nanostructures by a green ruthenium cluster (I). Chemisorption of freshly prepared PSi surfaces in a hexane solution of the Ru cluster for several days at room temperature led to a complete quenching of the PSi PL. The only visible PL was due to the original PL of the cluster. When the PSi surface functionalized with undecylenic acid was immersed in the same hexane solution of (I), the PSi PL was completely quenched and accompanied with a shift to a lower energy of the cluster PL. This shift was assigned to the formation of an ester linkage resulting from the nucleophilic attack of the PO anion of the cluster on the terminal acid functional group.

White light photoluminescence from ZnS films on porous Si substrates

International Nuclear Information System (INIS)

Wang Caifeng; Li Weibing; Li Qingshan; Hu Bo

2010-01-01

ZnS films were deposited on porous Si (PS) substrates using a pulsed laser deposition (PLD) technique. White light emission is observed in photoluminescence (PL) spectra, and the white light is the combination of blue and green emission from ZnS and red emission from PS. The white PL spectra are broad, intense in a visible band ranging from 450 to 700 nm. The effects of the excitation wavelength, growth temperature of ZnS films, PS porosity and annealing temperature on the PL spectra of ZnS/PS were also investigated. (semiconductor materials)

Visible photoluminescence from plasma-polymerized-organosilicone thin films deposited from HMDSO/O2 induced remote plasma: effect of oxygen fraction

International Nuclear Information System (INIS)

Naddaf, M.; Saloum, S.

2009-01-01

Visible photoluminescence (PL) from thin films deposited on silicon wafers by remote plasma polymerization of the hexamethyldisiloxane (HMDSO)/O 2 mixture in a radio-frequency hollow cathode discharge reactor has been investigated as a function of different oxygen fractions (χ0 2 0.38, 0.61, 0.76 and 0.9). At room temperature, the film deposited at exhibits a strong, broad PL band peak centred at around 537.6 nm. A blue shift and a considerable decrease (∼one order) in the intensity of the PL peak are observed after the addition of oxygen. Furthermore, in contrast to the film deposited from pure HMDSO, the low temperature (15 K) PL spectra of the film deposited from different HMDSO/O 2 mixtures exhibit two separated green-blue and yellow-green PL peaks. The PL behaviour of the deposited films is correlated with their structural and morphological properties, investigated by using Fourier transform infrared, atomic force microscope and contact angle techniques. In addition, it is found from spectrophotometry measurements that the deposited films have relatively low absorption coefficients (in the range 100-500 cm -1 ) in the spectral range of their PL emission, attractive for possible integrated optics devices. (authors)

Strong Carrier-Phonon Coupling in Lead Halide Perovskite Nanocrystals

NARCIS (Netherlands)

Iaru, Claudiu M; Geuchies, Jaco J|info:eu-repo/dai/nl/370526090; Koenraad, Paul M; Vanmaekelbergh, Daniël|info:eu-repo/dai/nl/304829137; Silov, Andrei Yu

2017-01-01

We highlight the importance of carrier-phonon coupling in inorganic lead halide perovskite nanocrystals. The low-temperature photoluminescence (PL) spectrum of CsPbBr3 has been investigated under a nonresonant and a nonstandard, quasi-resonant excitation scheme, and phonon replicas of the main PL

Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors

International Nuclear Information System (INIS)

Oda, Katsuya; Okumura, Tadashi; Tani, Kazuki; Saito, Shin-ichi; Ido, Tatemi

2014-01-01

Lattice strain applied by patterned Si 3 N 4 stressors in order to improve the optical properties of Ge layers directly grown on a Si substrate was investigated. Patterned Si 3 N 4 stressors were fabricated by various methods and their effects on the strain and photoluminescence were studied. Although we found that when the stressor was fabricated by thermal chemical vapor deposition (CVD), the Ge waveguide was tensilely and compressively strained in the edge and center positions, respectively, and photoluminescence (PL) could be improved by decreasing the width of the waveguide, the crystallinity of the Ge waveguide was degraded by the thermal impact of the deposition process. Low-temperature methods were therefore used to make the patterned stressors. The tensile strain of the Ge layer increased from 0.14% to 0.2% when the stressor was grown by plasma enhanced CVD at 350 °C, but the effects of the increased tensile strain could not be confirmed because the Si 3 N 4 layer was unstable when irradiated with the excitation light used in photoluminescence measurements. Si 3 N 4 stressors grown by inductively coupled plasma CVD at room temperature increased the tensile strain of the Ge layer up to 0.4%, thus red-shifting the PL peak and obviously increasing the PL intensity. These results indicate that the Si 3 N 4 stressors fabricated by the room-temperature process efficiently improve the performance of Ge light-emitting devices. - Highlights: • Ge layers were directly grown on a Si substrate by low-temperature epitaxial growth. • Si 3 N 4 stressors were fabricated on the Ge layers by various methods. • Tensile strain of the Ge layers was improved by the Si 3 N 4 stressors. • Photoluminescence (PL) intensity was increased with the Si 3 N 4 stressors. • Red-shift of the PL spectra was observed from the tensile strained Ge layers

Photoluminescence wavelength variation of monolayer MoS2 by oxygen plasma treatment

International Nuclear Information System (INIS)

Kim, Min Su; Nam, Giwoong; Park, Seki; Kim, Hyun; Han, Gang Hee; Lee, Jubok; Dhakal, Krishna P.; Leem, Jae-Young; Lee, Young Hee; Kim, Jeongyong

2015-01-01

We performed nanoscale confocal photoluminescence (PL), Raman, and absorption spectral imaging measurements to investigate the optical and structural properties of molybdenum disulfide (MoS 2 ) monolayers synthesized by chemical vapor deposition method and subjected to oxygen plasma treatment for 10 to 120 s under high vacuum (1.3 × 10 −3 Pa). Oxygen plasma treatment induced red shifts of ~ 20 nm in the PL emission peaks corresponding to A and B excitons. Similarly, the peak positions corresponding to A and B excitons of the absorption spectra were red-shifted following oxygen plasma treatment. Based on the confocal PL, absorption, and Raman microscopy results, we suggest that the red-shifting of the A and B exciton peaks originated from shallow defect states generated by oxygen plasma treatment. - Highlights: • Effects of oxygen plasma on optical properties of monolayer MoS 2 were investigated. • Confocal photoluminescence, Raman, and absorption spectral maps are presented. • Wavelength tuning up to ~ 20 nm for the peak emission wavelength was achieved

Optical modelling of photoluminescence emitted by thin doped films

International Nuclear Information System (INIS)

Pigeat, P.; Easwarakhanthan, T.; Briancon, J.L.; Rinnert, H.

2011-01-01

Photoluminescence (PL) spectra emitted by doped films are deformed owing to film thickness-dependent wave interference. This hampers knowing well their PL generating mechanisms as well as designing photonic devices with suitable geometries that improve their PL efficiency. We develop in this paper an energy model for PL emitted by doped films considering the interaction between the wavelength-differing incident standing and emitted waves, their energy transfer in-between, and the interferences undergone by both. The film optical constants are estimated fitting the model to the measured PL. This simple model has thus allowed us to interpret the evolution of PL emitted by Er-doped AlN films prepared on Si substrates by reactive magnetron sputtering. The shapes, the amplitudes, and the illusive sub-spectral features of the PL spectra depend essentially on the film thickness. The model further predicts high sensitivity for PL emitted by non-homogenously doped stacked-films to incident light wavelengths and film-thickness variations. This property has potential applications in tracking wavelength variations and in measuring physical quantities producing thickness variations. This model may be used to optimise PL efficiency of photonic devices through different film geometries and optical properties.

Shape controlled synthesis of CaMoO4 thin films and their photoluminescence property

International Nuclear Information System (INIS)

Marques, Ana Paula de Azevedo; Longo, Valeria M.; Melo, Dulce M.A. de; Pizani, Paulo S.; Leite, Edson R.; Varela, Jose Arana; Longo, Elson

2008-01-01

CaMoO 4 (CMO) disordered and ordered thin films were prepared by the complex polymerization method (CPM). The films were annealed at different temperatures and time in a conventional resistive furnace (RF) and in a microwave (MW) oven. The microstructure and surface morphology of the structure were monitored by atomic force microscopy (AFM) and high-resolution scanning electron microscopy (HRSEM). Order and disorder were characterized by X-ray diffraction (XRD) and optical reflectance. A strong photoluminescence (PL) emission was observed in the disordered thin films and was attributed to complex cluster vacancies. The experimental results were compared with density functional and Hartree-Fock calculations. - Graphical abstract: CaMoO 4 thin films were prepared by the complex polymerization method (CPM). The films were annealed at different temperatures and time in a conventional resistive furnace and in a microwave oven. A strong photoluminescence emission was observed in the disordered thin films and was attributed to complex cluster vacancies. The experimental results were confirmed by high level first principle calculations

Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Woscholski, R., E-mail: ronja.woscholski@physik.uni-marburg.de; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

2016-08-31

Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C.

Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

International Nuclear Information System (INIS)

Woscholski, R.; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

2016-01-01

Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C

Temperature dependence of photoluminescence spectra of bilayer two-dimensional electron gases in LaAlO3/SrTiO3 superlattices: coexistence of Auger recombination and single-carrier trapping

Directory of Open Access Journals (Sweden)

H. J. Harsan Ma

2015-06-01

Full Text Available We report emerging photoluminescence (PL of bilayer two-dimensional electron gases (2DEG in LaAlO3/SrTiO3 (LAO/STO systems. A strong blue PL emerges in bilayer-2DEGs in LAO/STO/LAO/STO which doesn’t show in LAO/STO. PL band in bilayer-2DEGs includes both nearly temperature independent Auger recombination and temperature dependent free electron trapping while it crossovers from Auger recombination to single carrier trapping in LAO/STO. The PL signal of free electron trapping appears at high temperatures and it is much stronger than Auger recombination in the conducting channel in bilayer 2DEGs. This observation shows that high mobility carriers dominate the carrier dynamics in bilayer-2DEGs in LAO/STO superlattices.

Simple and greener synthesis of highly photoluminescence Mn{sup 2+}-doped ZnS quantum dots and its surface passivation mechanism

Energy Technology Data Exchange (ETDEWEB)

Wang, Yongbo; Liang, Xuhua; Ma, Xuan; Hu, Yahong [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Hu, Xiaoyun; Li, Xinghua [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China); Fan, Jun, E-mail: fanjun@nwu.edu.cn [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi’an, Shannxi, 710069 (China)

2014-10-15

Graphical abstract: TEM and HRTEM (inset) images of the as-prepared Mn{sup 2+}-doped ZnS QDs and the passivation mechanism model of GSH-capped ZnS QDs (b). - Highlights: • Highly photoluminescent Mn{sup 2+}-doped ZnS quantum dots were synthesized by a simple synthetic method. • The effects of Mn{sup 2+} doping concentration, reaction time and temperature on PL intensity were investigated. • The mechanism of surface passivation was described. - Abstract: In this paper, we reported a simple synthetic method of highly photoluminescent (PL) and stable Mn{sup 2+}-doped ZnS quantum dots (QDs) with glutathione (GSH) as the capping molecule and focused on mechanism of the surface passivation of QDs. The Mn{sup 2+}-doped ZnS QDs that was synthesized in basic solution (pH 10) at 120 °C for 5 h exhibited blue trap-state emission around 418 nm and a strong orange-red emission at about 580 nm with an excitation wavelength of 330 nm. The optimum doping concentration is determined to be 1.5 at.%, and the present Mn{sup 2+}-doped ZnS QDs synthesized under the optimal reaction condition exhibited a quantum yield of 48%. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) indicated that the Mn{sup 2+}-doped ZnS QDs were 3–5 nm in size with a zinc blend structure. More importantly, the PL intensity and chemical stability can be improved using organic ligand modification strategies, it was found that GSH could passivate surface defects very efficiently by comparing and analyzing the results of the different organic ligands modification. The cadmium-free Mn{sup 2+}-doped ZnS QDs well-passivated with GSH as capping molecule acquired the advantages of strong PL and excellent chemical stability, which are important to QD applications.

Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

Energy Technology Data Exchange (ETDEWEB)

Joo, Jinmyoung [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Biomedical Engineering Research Center, Asan Institute for Life Sciences, Asan Medical Center, University of Ulsan College of Medicine, Seoul 05505 (Korea, Republic of); Defforge, Thomas; Gautier, Gael, E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Universite Francois Rabelais de Tours, CNRS CEA, INSA-CVL, GREMAN UMR 7347, 37071 Tours Cedex 2 (France); Loni, Armando [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Kim, Dokyoung; Sailor, Michael J., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Li, Z. Y. [Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Canham, Leigh T., E-mail: msailor@ucsd.edu, E-mail: gael.gautier@univ-tours.fr, E-mail: lcanham@psivida.com [pSiMedica Ltd., Malvern Hills Science Park, Geraldine Road, Malvern, Worcestershire WR14 3SZ (United Kingdom); Nanoscale Physics Research Laboratory, School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom)

2016-04-11

The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals (<5 nm), pore collapse and morphological changes within the nanocrystalline structure after common drying processes can affect PL efficiency. We report the highly beneficial effects of using SCD for preparation of photoluminescent pSi powders. Significantly higher surface areas and pore volumes have been realized by utilizing SCD (with CO{sub 2} solvent) instead of air-drying. Correspondingly, the pSi powders better retain the porous structure and the nano-sized silicon grains, thus minimizing the formation of non-radiative defects during liquid evaporation (air drying). The SCD process also minimizes capillary-stress induced contact of neighboring nanocrystals, resulting in lower exciton migration levels within the network. A significant enhancement of the PL quantum yield (>32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

Enhancement of the photoluminescence in CdSe quantum dot–polyvinyl alcohol composite by light irradiation

Energy Technology Data Exchange (ETDEWEB)

Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Gudymenko, O.; Venger, Ye. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauky 41, 03028 Kyiv (Ukraine); Stroyuk, O.; Raevska, O. [L. Pysarzhevsky Institute of Physical Chemistry, NAS of Ukraine, pr. Nauky 31, 03028 Kyiv (Ukraine); Kryshtab, T., E-mail: kryshtab@gmail.com [Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9 U.P.A.L.M., 07738 Mexico D.F. (Mexico)

2013-09-15

The effect of photo-induced enhancement (more than a tenfold) of room temperature deep-trap photoluminescence (PL) in CdSe quantum dots (QDs) embedded in polyvinyl alcohol (PVA) film has been found and investigated by the PL and X-ray diffraction methods. The effect is observed under illumination of the QD/PVA composite with LED's light of 409 or 470 nm at elevated temperatures and is shown to be caused by an increase of the activation energy of thermal quenching of defect-related PL. It is shown that thermal annealing of the composite by itself stimulates polymer crystallization and produces a small increase in the intensity of both the band-edge and defect-related PL bands of CdSe QDs. It is found that the effect of illumination decreases when the annealing temperature increases from 90 °C to 120 °C because thermal annealing at 120 °C per se results in strong enhancement of room temperature deep-trap PL. The effect of photo-induced enhancement of defect-related PL is found to be irreversible and is assumed to be related to the change of QD surface defect passivation or surface defect rearrangement. This is ascribed to partial destruction of PVA matrix as a result of interaction of QD/PVA interface with photocarriers generated in the QDs due to LED's light absorption.

Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films

National Research Council Canada - National Science Library

Seo, J. T; Hoemmerich, U; Lee, D. C; Heikenfeld, J; Steckl, A. J; Zavada, J. M

2002-01-01

The green (537 and 558 nm) and near infrared (1.54 micrometers) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity...

Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene

OpenAIRE

Zhang, Shuang; Yang, Jiong; Xu, Renjing; Wang, Fan; Li, Weifeng; Ghufran, Muhammad; Zhang, Yong-wei; Yu, Zongfu; Zhang, Gang; Qin, Qinghua; Lu, Yuerui

2014-01-01

Phosphorene is a new family member of two-dimensional materials. We observed strong and highly layer-dependent photoluminescence in few-layer phosphorene (2 to 5 layers). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us ...

Structural and photoluminescence characterization of SnO{sub 2}: F thin films deposited by advanced spray pyrolysis technique at low substrate temperature

Energy Technology Data Exchange (ETDEWEB)

Shewale, P.S. [Thin Film Physics Laboratory, Department of Electronics, Shivaji University, Kolhapur 416004 (India); Ung Sim, Kyu; Kim, Ye-bin; Kim, J.H. [Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Buk-Gu, Gwangju 500757 (Korea, Republic of); Moholkar, A.V. [Department of Physics, Shivaji University, Kolhapur 416004 (India); Uplane, M.D., E-mail: mdu_eln@unishivaji.ac.in [Thin Film Physics Laboratory, Department of Electronics, Shivaji University, Kolhapur 416004 (India)

2013-07-15

Fluorine doped tin oxide (FTO) thin films were deposited on glass substrates, at different substrate temperatures using advanced spray pyrolysis technique. X-ray diffraction studies showed that the crystallinity of the thin films increased with increasing substrate temperature. FESEM and AFM studies support the conclusions drawn from X-ray diffraction studies. X-ray photoelectron studies confirm oxygen deficiency in formation of the FTO nanocrystallites. The photoluminescence of the FTO films were investigated. It was found that, room temperature photoluminescence spectra are dominated by oxygen vacancies and exhibit a rich violet photoluminescence band about ∼404 nm with an extensively feeble red emission about 700 nm. The Photoluminescence intensity varies with the substrate temperature. The photoemission position is observed to be independent of substrate temperature. -- Highlights: ► Photoluminescent FTO thin films were deposited at low substrate temperatures. ► Influence of substrate temperature on the PL characteristics was studied. ► The samples are polycrystalline with a cassiterite tetragonal crystal structure. ► The room temperature UV/violet PL emission was dominated by the oxygen vacancies. ► PL efficiency is optimum at 613 K substrate temperature.

Micro-Raman and micro-photoluminescence study of bio-conjugated core–shell CdSe/ZnS nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics of NASU, pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Kolomys, O.; Strelchuk, V. [V. Lashkaryov Institute of Semiconductor Physics of NASU, pr. Nauky 41, 03028 Kyiv (Ukraine); Rachkov, O. [The Institute of Molecular Biology and Genetics of NASU, Zabolotnogo Str. 150, 03680 Kyiv (Ukraine); Kryvko, A. [Instituto Politécnico Nacional – ESIME, Av. IPN, Ed. Z4, U.P.A.L.M., 07738 Mexico D.F. (Mexico)

2014-11-15

The micro-Raman and micro-photoluminescence spectra of non-conjugated and conjugated with antibody against S6K2 commercial CdSe/ZnS quantum dots (QDs) were investigated under different excitation wavelengths and at different temperatures. In the photoluminescence (PL) spectra, the additional PL band shifted on 0.6–0.65 eV to higher energies from the CdSe/ZnS QD exciton PL band is revealed. The relative intensity of this band is found to be several times larger in bio-conjugated QDs, than in the non-conjugated ones. The characteristics of both PL bands (the PL intensity, spectral position and half-width of the PL band) vary similarly under continuous laser light irradiation, storage of the QD samples in the atmospheric ambience as well as during the temperature change. In the Raman spectra recorded under excitation resonant with the high-energy PL band, the additional Raman peaks at about 300 cm{sup −1} and 600 cm{sup −1}, which are close to the frequency of LO and 2LO phonons of bulk CdS, are found. It is proposed that alloyed QDs with chemical composition close to CdS are responsible for the additional high-energy PL band. The possible reasons for the formation of the alloyed QDs are discussed.

Influence of fabrication parameter on the nanostructure and photoluminescence of highly doped p-porous silicon

Energy Technology Data Exchange (ETDEWEB)

Li, Shaoyuan [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Ma, Wenhui, E-mail: mwhsilicon@163.com [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Zhou, Yang, E-mail: zhouyangnano@163.com [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Chen, Xiuhua [Faculty of Physical Science and Technology, Yunnan University, Kunming 650091 (China); Ma, Mingyu [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China); Xiao, Yongyin [Faculty of Physical Science and Technology, Yunnan University, Kunming 650091 (China); Xu, Yaohui [National Engineering Laboratory for Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093 (China); Faculty of Metallurgical and energy engineering, Kunming University of Science and Technology, Kunming 650093 (China)

2014-02-15

Porous silicon (PS) was prepared by anodizing highly doped p-type silicon in the solution of H{sub 2}O/ethanol/HF. The effects of key fabrication parameters (HF concentration, etching time and current density) on the nanostructure of PS were carefully investigated by AFM, SEM and TEM characterization. According to the experimental results, a more full-fledged model was developed to explain the crack behaviors on PS surface. The photoluminescence (PL) of resulting PS was studied by a fluorescence spectrophotometer and the results show that PL peak positions shift to shorter wavelength with the increasing current density, anodisation time and dilution of electrolyte. The PL spectra blue shift of the sample with higher porosity is confirmed by HRTEM results that the higher porosity results in smaller Si nanocrystals. A linear model (λ{sub PL/nm}=620.3–0.595P, R=0.905) was established to describe the correlation between PL peak positions and porosity of PS. -- Highlights: • The effect of fabrication parameter on the nanostructure of PS is investigated. • The influence of nanostructure on the photoluminescence behaviors is studied • A full-fledged model for expounding the crack behaviors of PS is presented. • The correlation between the porosity and PL peak blue shift is described by a linear model.

Origin of photoluminescence in β -G a2O3

Science.gov (United States)

Ho, Quoc Duy; Frauenheim, Thomas; Deák, Peter

2018-03-01

β -G a2O3 , a candidate material for power electronics and UV optoelectronics, shows strong room-temperature photoluminescence (PL). In addition to the three well-known bands of as-grown samples in the UV, blue, and green, also red PL was observed upon nitrogen doping. This raises the possibility of applying β -G a2O3 nanostructures as white phosphors. Using an optimized, Koopmans-compliant hybrid functional, we show that most intrinsic point defects, as well as substitutional nitrogen, act as deep acceptors, and each of the observed PL bands can be explained by electron recombination with a hole trapped in one of them. We suggest this mechanism to be general in wide-band-gap semiconductors which can only be doped n -type. Calculations on the nitrogen acceptor reproduce the observed red luminescence accurately. Earlier we have shown that not only the energy, but the polarization properties of the UV band can be explained by self-trapped hole states. Here we find that the blue band has its origin mainly in singly negative Ga-O divacancies, and the green band is caused dominantly by interstitial O atoms (with minor contribution of Ga vacancies to both). These assignments can explain the experimentally observed dependence of the PL bands on free-electron concentration and stoichiometry. The information provided here paves the way for the conscious tuning of light emission from β -G a2O3 .

From photoluminescence emissions to plasmonic properties in platinum nanoparticles embedded in silica by ion implantation

Energy Technology Data Exchange (ETDEWEB)

Bornacelli, J., E-mail: jhbornacelli@gmail.com [Instituto de Física, Universidad Nacional Autónoma de México, 04510 México D.F. (Mexico); Silva-Pereyra, H.G. [IPICyT, Division de Materiales Avanzados, Camino a la presa San Jose 2055, San Luis Potosi, S.L.P. 78216 (Mexico); Rodríguez-Fernández, L. [Instituto de Física, Universidad Nacional Autónoma de México, 04510 México D.F. (Mexico); Avalos-Borja, M. [IPICyT, Division de Materiales Avanzados, Camino a la presa San Jose 2055, San Luis Potosi, S.L.P. 78216 (Mexico); Centro de Nanociencias y Nanotecnologia – Universidad Nacional Autónoma de México, A. Postal 2681, Ensenada, B.C. (Mexico); Oliver, A. [Instituto de Física, Universidad Nacional Autónoma de México, 04510 México D.F. (Mexico)

2016-11-15

We have studied photoluminescence emission and optical absorption from platinum nanoparticles (Pt-nps) embedded in a silica matrix obtained by ion implantation. The Pt ions were implanted at 2 MeV and the nanoclusters were nucleated after thermal treatment at 600, 800, and 1100 °C under two different atmospheres: argon gas and a reducing atmosphere compound of H{sub 2} and N{sub 2}. The luminescent spectrum is broader (400–600 nm) and is peaked at 530 nm, but its intensity decreases as the annealing temperature increases. However, at high annealing temperatures, a Mie resonance at 220 nm emerges in the absorption spectrum. We then observed a transition between two optical properties in a system of Pt-nps embedded in silica: from molecule-like properties such as photoluminescence emission to localized surface plasmon absorption. - Highlights: • Photoluminescence (PL) from ion-implanted Pt-nps in silica have been demonstrated. • PL properties depend on the temperature and atmosphere used to form Pt-nps in silica. • PL is quenched for samples with larger Pt-nps, however a Mie resonance appear. • Transition from molecule-like to bulk-like properties of Pt-nps in silica is reveled.

Photoluminescence properties of white light emitting La2O3:Dy3+ nanocrystals

Science.gov (United States)

Reenabati Devi, Konsam; Dorendrajit Singh, Shougaijam; David Singh, Th.

2018-01-01

White light emitting nanocrystalline La2O3:Dy3+ phosphors with different concentration (0.5-2 at.%) were synthesized by simple precipitation method. X-ray diffraction (XRD) pattern indicates all the samples crystallizes in the hexagonal phase. Average crystallite sizes of the samples calculated from XRD data were found to be in the range of 20-55 nm. Transmission electron microscopy, selected area electron diffraction, energy dispersive analysis of X-ray and photoluminescence (PL) of the samples are also reported. Strong PL excitation peak due to charge transfer band was observed at 230 nm. Photoluminescence emission peaks observed at 486 and 575 nm were probably attributed to 4F9/2-6H15/2 and 4F9/2-6H13/2 of Dy3+ ions respectively. Optimum luminescence intensity is found at 1 at.% Dy3+ doped La2O3 sample. Further, Commission Internationale de l'é clairage (CIE, 1931) co-ordinates and correlated color temperature (CCT) of the doped sample were calculated to investigate the phosphors' performance and technical applicability of the emitted light respectively. CCT of the 0.5 and 1 at.% samples is 5894 K (white light), within the range of vertical daylight, which makes the synthesised samples promising nanophosphor and may find application in simulating vertical daylight of the Sun.

Three-photon excited PL spectroscopy and photo-generated Frenkel defects in wide-bandgap layered CdI2 semiconductors

International Nuclear Information System (INIS)

Miah, M. Idrish

2009-01-01

We performed a three-photon excitation nonlinear photoluminescence (PL) spectroscopy in single crystals of wide-bandgap semiconductors (WBSs). The crystal temperature (T L )-dependent PL emission intensity (I PL ) excited with different excitation power density (P) was measured. The PL emissions showed characteristics I PL with their maxima at around 520 nm. The I PL might be due to the presence of the photo-generated Frenkel defects (FDs) in WBSs. A detailed analysis of the PL spectra showed a third-order power law dependence of the maximum I PL on P for all the crystal temperature T L . The I PL was found to increase with decreasing T L . The results demonstrated the existence of the self-trapped excitons resulting from the presence of the FDs in the crystals.

Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes

International Nuclear Information System (INIS)

Hadj Alouane, M. H.; Ilahi, B.; Maaref, H.; Salem, B.; Aimez, V.; Morris, D.; Turala, A.; Regreny, P.; Gendry, M.

2010-01-01

We report on the effects of the As/P intermixing induced by phosphorus ion implantation in InAs/InP quantum dashes (QDas) on their photoluminescence (PL) properties. For nonintermixed QDas, usual temperature-dependent PL properties characterized by a monotonic redshift in the emission band and a continual broadening of the PL linewidth as the temperature increases, are observed. For intermediate ion implantation doses, the inhomogeneous intermixing enhances the QDas size dispersion and the enlarged distribution of carrier confining potential depths strongly affects the temperature-dependent PL properties below 180 K. An important redshift in the PL emission band occurs between 10 and 180 K which is explained by a redistribution of carriers among the different intermixed QDas of the ensemble. For higher implantation doses, the homogeneous intermixing reduces the broadening of the localized QDas state distribution and the measured linewidth temperature behavior matches that of the nonintermixed QDas. An anomalous temperature-dependent emission energy behavior has been observed for extremely high implantation doses, which is interpreted by a possible QDas dissolution.

Hydrothermal synthesis of two photoluminescent nitrogen-doped graphene quantum dots emitted green and khaki luminescence

International Nuclear Information System (INIS)

Zhu, Xiaohua; Zuo, Xiaoxi; Hu, Ruiping; Xiao, Xin; Liang, Yong; Nan, Junmin

2014-01-01

A simple and effective chemical synthesis of the photoluminescent nitrogen-doped graphene quantum dots (N-GQDs) biomaterial is reported. Using the hydrothermal treatment of graphene oxide (GO) in the presence of hydrogen peroxide (H 2 O 2 ) and ammonia, the N-GQDs are synthesized through H 2 O 2 exfoliating the GO into nanocrystals with lateral dimensions and ammonia passivating the generated active surface. Then, after a dialytic separation, two water-soluble N-GQDs with average size of about 2.1 nm/6.2 nm, which emit green/khaki luminescence and exhibit excitation dependent/independent photoluminescence (PL) behaviors, are obtained. In addition, it is also demonstrated that these two N-GQDs are stable over a broad pH range and have the upconversion PL property, showing this approach provides a simple and effective method to synthesize the functional N-GQDs. - Highlights: • Nitrogen-doped graphene quantum dots (N-GQDs) are prepared by hydrothermal routine. • Two N-GQDs with different size distribution emit green/khaki photoluminescence. • Two N-GQDs exhibit excitation-dependent/independent photoluminescence behaviors

Photoluminescence studies on porous silicon/polymer heterostructure

International Nuclear Information System (INIS)

Mishra, J.K.; Bhunia, S.; Banerjee, S.; Banerji, P.

2008-01-01

Hybrid devices formed by filling porous silicon with MEH-PPV or poly [2-methoxy-5(2-ethylhexyloxy-p-phenylenevinylene)] have been investigated in this work. Analyses of the structures by scanning electron microscopy (SEM) demonstrated that the porous silicon layer was filled by the polymer with no significant change of the structures except that the polymer was infiltrated in the pores. The photoluminescence (PL) of the structures at 300 K showed that the emission intensity was very high as compared with that of the MEH-PPV films on different substrates such as crystalline silicon (c-Si) and indium tin oxide (ITO). The PL peak in the MEH-PPV/porous silicon composite structure is found to be shifted towards higher energy in comparison with porous silicon PL. A number of possibilities are discussed to explain the observations

Defect-Induced Photoluminescence Enhancement and Corresponding Transport Degradation in Individual Suspended Carbon Nanotubes

Science.gov (United States)

Wang, Bo; Shen, Lang; Yang, Sisi; Chen, Jihan; Echternach, Juliana; Dhall, Rohan; Kang, DaeJin; Cronin, Stephen

2018-05-01

This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus. The utilization of defects in carbon nanotubes to improve their photoluminescence efficiency has become a widespread study of the realization of efficient light-emitting devices. Here, we report a detailed comparison of the defects in nanotubes (quantified by Raman spectroscopy) and photoluminescence (PL) intensity of individual suspended carbon nanotubes (CNTs). We also evaluate the impact of these defects on the electron or hole transport in the nanotubes, which is crucial for the ultimate realization of optoelectronic devices. We find that brightly luminescent nanotubes exhibit a pronounced D-band in their Raman spectra, and vice versa, dimly luminescent nanotubes exhibit almost no D-band. Here, defects are advantageous for light emission by trapping excitons, which extend their lifetimes. We quantify this behavior by plotting the PL intensity as a function of the ID /IG -band Raman intensity ratio, which exhibits a Lorentzian distribution peaked at ID /IG=0.17 . For CNTs with a ID /IG ratio >0.25 , the PL intensity decreases, indicating that above some critical density, nonradiative recombination at defect sites dominates over the advantages of exciton trapping. In an attempt to fabricate optoelectronic devices based on these brightly luminescent CNTs, we transfer these suspended CNTs to platinum electrodes and find that the brightly photoluminescent nanotubes exhibit nearly infinite resistance due to these defects, while those without bright photoluminescence exhibit finite resistance. These findings indicate a potential limitation in the use of brightly luminescent CNTs for optoelectronic applications.

Negative thermal quenching of photoluminescence in ZnO

International Nuclear Information System (INIS)

Watanabe, M.; Sakai, M.; Shibata, H.; Satou, C.; Satou, S.; Shibayama, T.; Tampo, H.; Yamada, A.; Matsubara, K.; Sakurai, K.; Ishizuka, S.; Niki, S.; Maeda, K.; Niikura, I.

2006-01-01

We have studied photoluminescence (PL) spectra of ZnO single crystals at photon energies ranging between 2.1 and 3.4eV as a function of temperature to determine thermal quenching behavior in PL emission intensity. It appears that the deep level emissions, donor-acceptor pair emissions, and the bound excitonic emissions undergo negative thermal quenching (NTQ) at intermediate temperatures above ∼10K. By employing an NTQ formula expressed analytically as a function of temperature, we have obtained quantitative NTQ characteristics in terms of the activation energies associated with the intermediate states as well as nonradiative channels

Photoluminescence properties of cerium oxide nanoparticles as a function of lanthanum content

Energy Technology Data Exchange (ETDEWEB)

Deus, R.C. [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); Cortés, J.A., E-mail: leandrosrr89@gmail.com [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); Ramirez, M.A. [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); Ponce, M.A. [Instituto de Investigaciones en Ciencia y Tecnología de Materiales (INTEMA) (CONICET-Universidad Nacional de Mar del Plata), Juan B. Justo 4302, 7600 Mar del Plata (Argentina); Andres, J. [Laboratório Interdisciplinar em Cerâmica, Instituto de Química, Universidade Estadual Paulista, P.O. Box 355, 14801-907 Araraquara, São Paulo (Brazil); Rocha, L.S.R. [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); and others

2015-10-15

Highlights: • CeO{sub 2} nanoparticles were obtained by microwave-hydrothermal method. • Rietveld refinement reveals a cubic structure. • KOH mineralizer agent exhibit weak agglomeration at low temperature and shorter time. - Abstract: The structural and photoluminescent properties at room temperature of CeO{sub 2} and La-doped CeO{sub 2} particles were undertaken. The obtained particles were synthesized by a microwave-assisted hydrothermal method (MAH) under different lanthanum contents. X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Fourier transform Raman (FT-Raman), Ultra-violet spectroscopy (UV–vis) and photoluminescence (PL) measurements were carried out. XRD revealed that the powders are free of secondary phases and crystallize in the cubic structure. Raman data show that increasing La doping content increase oxygen vacancies due to lattice expansion. The UV/vis absorption spectroscopy suggested the presence of intermediate energy levels in the band gap of structurally ordered powders. Lanthanum addition creates oxygen vacancies and shifts the photoluminescence in the low energy range leading to intense PL emission.

Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation

International Nuclear Information System (INIS)

Shiozaki, Nanako; Anantathanasarn, Sanguan; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki

2005-01-01

Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of W and d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties

Photoluminescence properties of Eu2+-activated Ca2Y2Si2O9 phosphor

NARCIS (Netherlands)

Zhang, Zhijun; Delsing, A.C.A.; Notten, P.H.L.; Zhao, Jingtai; Hintzen, H.T.J.M.

2012-01-01

Eu2+-activated Ca2Y2Si2O9 phosphors with different Eu2+ concentrations have been prepared by a solid-state reaction method at high temperature and their photoluminescence (PL) properties were investigated. Photoluminescence results show that Eu2+-doped Ca2Y2Si2O9 can be efficiently excited by

Visible photoluminescence from plasma-polymerized-organosilicone thin films deposited from HMDSO/O2 induced remote plasma: effect of oxygen fraction

Science.gov (United States)

Naddaf, M.; Saloum, S.

2008-09-01

Visible photoluminescence (PL) from thin films deposited on silicon wafers by remote plasma polymerization of the hexamethyledisiloxane (HMDSO)/O2 mixture in a radio-frequency hollow cathode discharge reactor has been investigated as a function of different oxygen fractions ( \\chi _{O_2 } =0 , 0.38, 0.61, 0.76 and 0.9). At room temperature, the film deposited at \\chi _{O_2 } =0 exhibits a strong, broad PL band peak centred at around 537.6 nm. A blue shift and a considerable decrease (~one order) in the intensity of the PL peak are observed after the addition of oxygen. Furthermore, in contrast to the film deposited from pure HMDSO, the low temperature (15 K) PL spectra of the film deposited from different HMDSO/O2 mixtures exhibit two separated 'green-blue' and 'yellow-green' PL peaks. The PL behaviour of the deposited films is correlated with their structural and morphological properties, investigated by using Fourier transform infrared, atomic force microscope and contact angle techniques. In addition, it is found from spectrophotometry measurements that the deposited films have relatively low absorption coefficients (in the range 100-500 cm-1) in the spectral range of their PL emission, attractive for possible integrated optics devices.

Visible photoluminescence from plasma-polymerized-organosilicone thin films deposited from HMDSO/O2 induced remote plasma: effect of oxygen fraction

International Nuclear Information System (INIS)

Naddaf, M; Saloum, S

2008-01-01

Visible photoluminescence (PL) from thin films deposited on silicon wafers by remote plasma polymerization of the hexamethyledisiloxane (HMDSO)/O 2 mixture in a radio-frequency hollow cathode discharge reactor has been investigated as a function of different oxygen fractions (χ O 2 =0, 0.38, 0.61, 0.76 and 0.9). At room temperature, the film deposited at (χ O 2 =0 exhibits a strong, broad PL band peak centred at around 537.6 nm. A blue shift and a considerable decrease (∼one order) in the intensity of the PL peak are observed after the addition of oxygen. Furthermore, in contrast to the film deposited from pure HMDSO, the low temperature (15 K) PL spectra of the film deposited from different HMDSO/O 2 mixtures exhibit two separated 'green-blue' and 'yellow-green' PL peaks. The PL behaviour of the deposited films is correlated with their structural and morphological properties, investigated by using Fourier transform infrared, atomic force microscope and contact angle techniques. In addition, it is found from spectrophotometry measurements that the deposited films have relatively low absorption coefficients (in the range 100-500 cm -1 ) in the spectral range of their PL emission, attractive for possible integrated optics devices

Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

International Nuclear Information System (INIS)

Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A.

2008-01-01

InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E 2 h mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

Energy Technology Data Exchange (ETDEWEB)

Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Fundacio General de la Universitat de Valencia, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

2008-07-01

InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E{sub 2}{sup h} mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

UV photooxidation induced structural and photoluminescence behaviors in vapor-etching based porous silicon

International Nuclear Information System (INIS)

Aouida, S.; Saadoun, M.; Ben Saad, K.; Bessais, B.

2006-01-01

In this paper, we investigate the effect of UV irradiation on Vapor-Etching (VE) based Porous Silicon (PS) structure and luminescence under controlled atmosphere (N 2 , air, O 2 ). The oxidation evolution is monitored by Fourier transform infrared (FTIR) spectroscopy. FTIR measurements show that the SiH x bond, initially present in the freshly prepared PS layers, decreased progressively with UV irradiation time until they completely disappear. We found that this treatment accelerates the oxidation process. SiO x structures appear and gradually become dominant as regard to the SiH x species, while UV irradiation is in progress. Generally, the photoluminescence (PL) intensity of the PS layer decreases instantaneously at the starting by the UV excitation and stabilizes after a period depending on the ambient gas and the specific surface area of the porous structure. Further UV exposure leads to a linear decrease of the PL intensity due to change of surface passivation from SiH x to O y SiH x . After less than 100 min of UV irradiation, the PL intensity exhibits an exponential decay. UV exposure in air and O 2 leads approximately to the same PL behavior, although faster PL intensity decrease was observed under O 2 -rich ambient. This was explained as being due to intense hydrogen desorption in presence of oxygen. Correlations of PL results with FTIR measurements show that surface passivation determine the electronic states of silicon nano-crystallites and influence the photoluminescence efficiency

Improvement of photoluminescence from Ge layer with patterned Si{sub 3}N{sub 4} stressors

Energy Technology Data Exchange (ETDEWEB)

Oda, Katsuya, E-mail: Katsuya.Oda.cb@hitachi.com; Okumura, Tadashi; Tani, Kazuki; Saito, Shin-ichi; Ido, Tatemi

2014-04-30

Lattice strain applied by patterned Si{sub 3}N{sub 4} stressors in order to improve the optical properties of Ge layers directly grown on a Si substrate was investigated. Patterned Si{sub 3}N{sub 4} stressors were fabricated by various methods and their effects on the strain and photoluminescence were studied. Although we found that when the stressor was fabricated by thermal chemical vapor deposition (CVD), the Ge waveguide was tensilely and compressively strained in the edge and center positions, respectively, and photoluminescence (PL) could be improved by decreasing the width of the waveguide, the crystallinity of the Ge waveguide was degraded by the thermal impact of the deposition process. Low-temperature methods were therefore used to make the patterned stressors. The tensile strain of the Ge layer increased from 0.14% to 0.2% when the stressor was grown by plasma enhanced CVD at 350 °C, but the effects of the increased tensile strain could not be confirmed because the Si{sub 3}N{sub 4} layer was unstable when irradiated with the excitation light used in photoluminescence measurements. Si{sub 3}N{sub 4} stressors grown by inductively coupled plasma CVD at room temperature increased the tensile strain of the Ge layer up to 0.4%, thus red-shifting the PL peak and obviously increasing the PL intensity. These results indicate that the Si{sub 3}N{sub 4} stressors fabricated by the room-temperature process efficiently improve the performance of Ge light-emitting devices. - Highlights: • Ge layers were directly grown on a Si substrate by low-temperature epitaxial growth. • Si{sub 3}N{sub 4} stressors were fabricated on the Ge layers by various methods. • Tensile strain of the Ge layers was improved by the Si{sub 3}N{sub 4} stressors. • Photoluminescence (PL) intensity was increased with the Si{sub 3}N{sub 4} stressors. • Red-shift of the PL spectra was observed from the tensile strained Ge layers.

Polycrystalline Si nanoparticles and their strong aging enhancement of blue photoluminescence

Science.gov (United States)

Yang, Shikuan; Cai, Weiping; Zeng, Haibo; Li, Zhigang

2008-07-01

Nearly spherical polycrystalline Si nanoparticles with 20 nm diameter were fabricated based on laser ablation of silicon wafer immersed in sodium dodecyl sulfate aqueous solution. Such Si nanoparticles consist of disordered areas and ultrafine grains of 3 nm in mean size and exhibit significant photoluminescence in blue region. Importantly, aging at ambient air leads to continuing enhancement of the emission (more than 130 times higher in 16 weeks) showing stable and strong blue emission. This aging enhancement is attributed to progressive passivation of nonradiative Pb centers corresponding to silicon dangling bonds on the particles' surface. This study could be helpful in pushing Si into optoelectronic field and Si-based full color display, biomedical tagging, and flash memories.

SEMICONDUCTOR MATERIALS: White light photoluminescence from ZnS films on porous Si substrates

Science.gov (United States)

Caifeng, Wang; Qingshan, Li; Bo, Hu; Weibing, Li

2010-03-01

ZnS films were deposited on porous Si (PS) substrates using a pulsed laser deposition (PLD) technique. White light emission is observed in photoluminescence (PL) spectra, and the white light is the combination of blue and green emission from ZnS and red emission from PS. The white PL spectra are broad, intense in a visible band ranging from 450 to 700 nm. The effects of the excitation wavelength, growth temperature of ZnS films, PS porosity and annealing temperature on the PL spectra of ZnS/PS were also investigated.

Growth orientation dependent photoluminescence of GaAsN alloys

International Nuclear Information System (INIS)

Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi; Sato, Shinichiro

2012-01-01

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

Using quantum dot photoluminescence for load detection

Science.gov (United States)

Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

2016-08-01

We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

Using quantum dot photoluminescence for load detection

Directory of Open Access Journals (Sweden)

M. Moebius

2016-08-01

Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

Photoluminescence at room temperature of liquid-phase crystallized silicon on glass

Directory of Open Access Journals (Sweden)

Michael Vetter

2016-12-01

Full Text Available The room temperature photoluminescence (PL spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.

Visible photoluminescence from plasma-polymerized-organosilicone thin films deposited from HMDSO/O{sub 2} induced remote plasma: effect of oxygen fraction

Energy Technology Data Exchange (ETDEWEB)

Naddaf, M; Saloum, S [Department of Physics, Atomic Energy Commission of Syria (AECS), PO Box 6091 Damascus (Syrian Arab Republic)], E-mail: scientific6@aec.org.sy

2008-09-07

Visible photoluminescence (PL) from thin films deposited on silicon wafers by remote plasma polymerization of the hexamethyledisiloxane (HMDSO)/O{sub 2} mixture in a radio-frequency hollow cathode discharge reactor has been investigated as a function of different oxygen fractions ({chi}{sub O{sub 2}}=0, 0.38, 0.61, 0.76 and 0.9). At room temperature, the film deposited at ({chi}{sub O{sub 2}}=0 exhibits a strong, broad PL band peak centred at around 537.6 nm. A blue shift and a considerable decrease ({approx}one order) in the intensity of the PL peak are observed after the addition of oxygen. Furthermore, in contrast to the film deposited from pure HMDSO, the low temperature (15 K) PL spectra of the film deposited from different HMDSO/O{sub 2} mixtures exhibit two separated 'green-blue' and 'yellow-green' PL peaks. The PL behaviour of the deposited films is correlated with their structural and morphological properties, investigated by using Fourier transform infrared, atomic force microscope and contact angle techniques. In addition, it is found from spectrophotometry measurements that the deposited films have relatively low absorption coefficients (in the range 100-500 cm{sup -1}) in the spectral range of their PL emission, attractive for possible integrated optics devices.

Effect of heat treatment on the structure of incorporated oxalate species and photoluminescent properties of porous alumina films formed in oxalic acid

Science.gov (United States)

Vrublevsky, I.; Jagminas, A.; Hemeltjen, S.; Goedel, W. A.

2008-09-01

The present work focuses on the use of IR spectroscopy and photoluminescence spectral measurements for studying the treatment temperature effect on the compositional and luminescent properties of oxalic acid alumina films. In line with the recent researches we have also found that heat treatment of porous alumina films formed in oxalic acid leads to considerable changes in their photoluminescence properties: upon annealing the intensity of photoluminescence (PL) increases reaching a maximum at the temperature of around 500 °C and then decreases. IR spectra of as-grown and heat-treated films have proved that PL emission in the anodic alumina films is related with the state of 'structural' oxalate species incorporated in the oxide lattice. These results allowed us to conclude that PL behavior of oxalic acid alumina films can be explained through the concept of variations in the bonding molecular orbitals of incorporated oxalate species including σ- and π-bonds.

Formation of photoluminescent n-type macroporous silicon: Effect of magnetic field and lateral electric potential

Energy Technology Data Exchange (ETDEWEB)

Antunez, E.E. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Estevez, J.O. [Instituto de Física, B. Universidad Autónoma de Puebla, A.P. J-48, Puebla 72570 (Mexico); Campos, J. [Instituto de Energías Renovables, UNAM, Priv. Xochicalco S/N, Temixco, Morelos, CP 62580 (Mexico); Basurto-Pensado, M.A. [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico); Agarwal, V., E-mail: vagarwal@uaem.mx [Centro de Investigación en Ingeniería y Ciencias Aplicadas, UAEM, Av. Universidad 1001, Col. Chamilpa, Cuernavaca, Morelos, CP 62210 (Mexico)

2014-11-15

Metal electrode-free electrochemical etching of low doped n-type silicon substrates, under the combined effect of magnetic and lateral electric field, is used to fabricate photoluminescent n-type porous silicon structures in dark conditions. A lateral gradient in terms of structural characteristics (i.e. thickness and pore dimensions) along the electric field direction is formed. Enhancement of electric and magnetic field resulted in the increase of pore density and a change in the shape of the macropore structure, from circular to square morphology. Broad photoluminescence (PL) emission from 500 to 800 nm, with a PL peak wavelength ranging from 571 to 642 nm, is attributed to the wide range of microporous features present on the porous silicon layer.

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

KAUST Repository

Tangi, Malleswararao

2017-09-22

We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.

Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

KAUST Repository

Tangi, Malleswararao; Shakfa, Mohammad Khaled; Mishra, Pawan; Li, Ming-Yang; Chiu, Ming-Hui; Ng, Tien Khee; Li, Lain-Jong; Ooi, Boon S.

2017-01-01

We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.

Ultrafast Time-Resolved Photoluminescence Studies of Gallium-Arsenide

Science.gov (United States)

Johnson, Matthew Bruce

This thesis concerns the study of ultrafast phenomena in GaAs using time-resolved photoluminescence (PL). The thesis consists of five chapters. Chapter one is an introduction, which discusses the study of ultrafast phenomena in semiconductors. Chapter two is a description of the colliding-pulse mode-locked (CPM) ring dye laser, which is at the heart of the experimental apparatus used in this thesis. Chapter three presents a detailed experimental and theoretical investigation of photoluminescence excitation correlation spectroscopy (PECS), the novel technique which is used to time-resolve ultrafast PL phenomena. Chapters 4 and 5 discuss two applications of the PECS technique. In Chapter 4 the variation of PL intensity in In-alloyed GaAs substrate material is studied, while Chapter 5 discusses the variation of carrier lifetimes in ion-damaged GaAs used in photo-conductive circuit elements (PCEs). PECS is a pulse-probe technique that measures the cross correlation of photo-excited carrier populations. The theoretical model employed in this thesis is based upon the rate equation for a simple three-level system consisting of valence and conduction bands and a single trap level. In the limit of radiative band-to-band dominated recombination, no PECS signal should be observed; while in the capture -dominated recombination limit, the PECS signal from the band-to-band PL measures the cross correlation of the excited electron and hole populations and thus, the electron and hole lifetimes. PECS is experimentally investigated using a case study of PL in semi-insulating (SI) GaAs and In -alloyed GaAs. At 77 K, the PECS signal is characteristic of a capture-dominated system, yielding an electron-hole lifetime of about 200 ps. However, at 5 K the behavior is more complicated and shows saturation effects due to the C acceptor level, which is un-ionized at 5 K. As a first application, PECS is used to investigate the large band-to-band PL contrast observed near dislocations in In

The correlation of blue shift of photoluminescence and morphology of silicon nanoporous

Energy Technology Data Exchange (ETDEWEB)

Al-Jumaili, Batool E. B., E-mail: batooleneaze@gmail.com [Department of Physics, (UPM), Serdang, Selangor 43400 (Malaysia); Department of Physics, Anbar University (Iraq); Talib, Zainal A.; Josephine, L.Y.; Paiman, Suriati B.; Muh’d, Ibrahim B.; Mofdal, Manahil E. E. [Department of Physics, (UPM), Serdang, Selangor 43400 (Malaysia); Ahmed, Naser M.; Abdulateef, Sinan A. [School of Physics, USM, 11800 Penang (Malaysia); Al-Jumaily, Abdulmajeed H. J. [Department of Computer and Communication Systems Engineering, Universiti Putra Malaysia (UPM), Serdang, Selangor 43400 (Malaysia); Ramizy, Asmiet [Department of Physics, Anbar University (Iraq)

2016-07-06

Porous silicon with diameters ranging from 6.41 to 7.12 nm were synthesized via electrochemical etching by varied anodization current density in ethanoic solutions containing aqueous hydrofluoric acid up to 65 mA/cm{sup 2}.The luminescence properties of the nanoporous at room temperature were analyzed via photoluminescence spectroscopy. Photoluminescence PL spectra exhibit a broad emission band in the range of 360-700 nm photon energy. The PL spectrum has a blue shift in varied anodization current density; the blue shift incremented as the existing of anodization although the intensity decreased. The current blue shift is owning to alteration of silicon nanocrystal structure at the superficies. The superficial morphology of the PS layers consists of unified and orderly distribution of nanocrystalline Si structures, have high porosity around (93.75%) and high thickness 39.52 µm.

Photoluminescent properties of ZnS nanoparticles prepared by electro-explosion of Zn wires

International Nuclear Information System (INIS)

Goswami, Navendu; Sen, P.

2007-01-01

We study the photoluminescent properties of ZnS nanoparticles without the influence of dopants or magnetic impurities. The ZnS nanoparticles reported in this case were synthesized by a novel method of electro-explosion of wire (EEW). The nanoparticles were prepared employing electro-explosion of pure zinc wires in a cell filled with sulfide ions to produce a free-standing compound ZnS semiconductor. To investigate the structural and optical properties, these nanoparticles were characterized by X-ray powder diffraction (XRD), atomic force microscopy (AFM), UV-visible and photoluminescence (PL) spectroscopy. Consistent with the enhancement of the PL intensity of the 443 nm peak due to deep blue emission of ZnS particles, the XRD of the nanoparticles reveals a hexagonal phase of ZnS nanocrystallites prepared by our novel synthesis technique

Self-assembly and photoluminescence evolution of hydrophilic and hydrophobic quantum dots in sol–gel processes

Energy Technology Data Exchange (ETDEWEB)

Yang, Ping, E-mail: mse_yangp@ujn.edu.cn [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China); Matras-Postolek, Katarzyna [Faculty of Chemical Engineering and Technology, Cracow University of Technology, Krakow 31-155 (Poland); Song, Xueling; Zheng, Yan; Liu, Yumeng; Ding, Kun; Nie, Shijie [School of Material Science and Engineering, University of Jinan, Jinan 250022 (China)

2015-10-15

Graphical abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were assembled into various morphologies including chain, hollow spheres, fibers, and ring structures through sol–gel processes. The PL properties during assembly as investigated. - Highlights: • Highly luminescent quantum dots (QDs) were synthesized from several ligands. • The evolution of PL in self-assembly via sol–gel processes was investigated. • CdTe QDs were assembled into a chain by controlling hydrolysis and condensation reactions. • Hollow spheres, fibers, and ring structures were created via CdSe/ZnS QDs in sol–gel processes. - Abstract: Highly luminescent quantum dots (QDs) with tunable photoluminescence (PL) wavelength were synthesized from several ligands to investigate the PL evolution in QD self-assembly via sol–gel processes. After ligand exchange, CdTe QDs were assembled into a chain by controlling the hydrolysis and condensation reaction of 3-mercaptopropyl-trimethoxysilane. The chain was then coated with a SiO{sub 2} shell from tetraethyl orthosilicate (TEOS). Hollow spheres, fibers, and ring structures were created from CdSe/ZnS QDs via various sol–gel processes. CdTe QDs revealed red-shifted and narrowed PL spectrum after assembly compared with their initial one. In contrast, the red-shift of PL spectra of CdSe/ZnS QDs is small. By optimizing experimental conditions, SiO{sub 2} spheres with multiple CdSe/ZnS QDs were fabricated using TEOS and MPS. The QDs in these SiO{sub 2} spheres retained their initial PL properties. This result is useful for application because of their high stability and high PL efficiency of 33%.

Combined experimental and theoretical investigations of the photoluminescent behavior of Ba(Ti, Zr)O3 thin films

International Nuclear Information System (INIS)

Cavalcante, L.S.; Gurgel, M.F.C.; Paris, E.C.; Simoes, A.Z.; Joya, M.R.; Varela, J.A.; Pizani, P.S.; Longo, E.

2007-01-01

The correlation between experimental data and theoretical calculations have been investigated to explain the photoluminescence at room temperature of Ba(Ti 0.75 Zr 0.25 )O 3 (BTZ) thin films prepared by the polymeric precursor method. The degree of structural order-disorder was investigated by X-ray diffraction, Fourier transform infrared spectroscopy, ultraviolet-visible absorption spectroscopy and photoluminescence (PL) measurements. First-principles quantum mechanical calculations based on density functional theory (B3LYP level) were employed to study the electronic structure of ordered and deformed asymmetric models. The electronic properties are analyzed and the relevance of the present theoretical and experimental results on the PL behavior is discussed. The presence of localized electronic levels and a charge gradient in the band gap due to a break in symmetry, are responsible for the PL in disordered BTZ lattice

Photoluminescence wavelength variation of monolayer MoS{sub 2} by oxygen plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Kim, Min Su [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nam, Giwoong [Department of Nanoscience & Engineering, Inje University, Gimhae 621-749 (Korea, Republic of); Park, Seki; Kim, Hyun [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Han, Gang Hee [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, Jubok; Dhakal, Krishna P. [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Leem, Jae-Young [Department of Nanoscience & Engineering, Inje University, Gimhae 621-749 (Korea, Republic of); Lee, Young Hee [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Jeongyong, E-mail: j.kim@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2015-09-01

We performed nanoscale confocal photoluminescence (PL), Raman, and absorption spectral imaging measurements to investigate the optical and structural properties of molybdenum disulfide (MoS{sub 2}) monolayers synthesized by chemical vapor deposition method and subjected to oxygen plasma treatment for 10 to 120 s under high vacuum (1.3 × 10{sup −3} Pa). Oxygen plasma treatment induced red shifts of ~ 20 nm in the PL emission peaks corresponding to A and B excitons. Similarly, the peak positions corresponding to A and B excitons of the absorption spectra were red-shifted following oxygen plasma treatment. Based on the confocal PL, absorption, and Raman microscopy results, we suggest that the red-shifting of the A and B exciton peaks originated from shallow defect states generated by oxygen plasma treatment. - Highlights: • Effects of oxygen plasma on optical properties of monolayer MoS{sub 2} were investigated. • Confocal photoluminescence, Raman, and absorption spectral maps are presented. • Wavelength tuning up to ~ 20 nm for the peak emission wavelength was achieved.

Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy

International Nuclear Information System (INIS)

Rihani, J.; Sallet, V.; Yahyaoui, N.; Harmand, J.C.; Oueslati, M.; Chtourou, R.

2009-01-01

Self-assembled InAs quantum dots (QDs) on GaAs(0 0 1) substrate were grown by molecular beam epitaxy (MBE) at a growth temperature of 490 deg. C. Two different families of dots were observed in the atomic force microscopy (AFM) image and ambiguously identified in the photoluminescence (PL) spectra. Temperature-dependent PL study was carried out in the 8-270 K temperature range. The integrated-PL intensity behavior of the two QDs populations was fit with the help of a rate equations model. It is found that the evolutions of the integrated-PL intensity of the two QDs population were governed by two regimes. The first one occurs in the 8-210 K temperature range and reveals an unusual enhancement of the integrated-PL intensity of the larger QDs (LQDs) class. This was attributed to the carrier supplies from the smaller QDs (SQDs) class via the tunneling process. The second one occurs in the 210-270 K temperature range and shows a common quench of the PL signals of the two QDs families, reflecting the same thermal escape mechanism of carriers

Three-photon excited PL spectroscopy and photo-generated Frenkel defects in wide-bandgap layered CdI{sub 2} semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.a [Qeensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)] [School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)] [Department of Physics, University of Chittagong, Chittagong-4331 (Bangladesh)

2009-12-14

We performed a three-photon excitation nonlinear photoluminescence (PL) spectroscopy in single crystals of wide-bandgap semiconductors (WBSs). The crystal temperature (T{sub L})-dependent PL emission intensity (I{sub PL}) excited with different excitation power density (P) was measured. The PL emissions showed characteristics I{sub PL} with their maxima at around 520 nm. The I{sub PL} might be due to the presence of the photo-generated Frenkel defects (FDs) in WBSs. A detailed analysis of the PL spectra showed a third-order power law dependence of the maximum I{sub PL} on P for all the crystal temperature T{sub L}. The I{sub PL} was found to increase with decreasing T{sub L}. The results demonstrated the existence of the self-trapped excitons resulting from the presence of the FDs in the crystals.

Photoluminescence due to early stage of oxygen precipitation in multicrystalline Si for solar cells

Science.gov (United States)

Higuchi, Fumito; Tajima, Michio; Ogura, Atsushi

2017-07-01

To analyze the early stage of oxygen precipitation in n-type multicrytalline Si, the spectral change of photoluminescence (PL) induced by thermal treatment at 450-650 °C was investigated in relation to the changes in excess donor and interstitial oxygen concentrations. We observed the characteristic PL bands in the near-band-edge region and sharp lines in the deep-level region in correspondence with the generation of thermal donors and new donors. The observed PL spectral variation is essentially the same as that in Czochralski-grown Si annealed at 450-650 °C.

Tuning the Photoluminescence of Graphene Quantum Dots by Photochemical Doping with Nitrogen

Directory of Open Access Journals (Sweden)

Xiaofen Xu

2017-11-01

Full Text Available Nitrogen-doped graphene quantum dots (NGQDs were synthesized by irradiating graphene quantum dots (GQDs in an NH3 atmosphere. The photoluminescence (PL properties of the GQDs and the NGQDs samples were investigated. Compared with GQDs, a clear PL blue-shift of NGQDs could be achieved by regulating the irradiating time. The NGQDs obtained by irradiation of GQDs for 70 min had a high N content of 15.34 at % and a PL blue-shift of about 47 nm. This may be due to the fact that photochemical doping of GQDs with nitrogen can significantly enhance the contents of pyridine-like nitrogen, and also effectively decrease the contents of oxygen functional groups of NGQDs, thus leading to the observed obvious PL blue-shift.

Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN

Energy Technology Data Exchange (ETDEWEB)

Devaraju, G. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Pathak, A.P., E-mail: appsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Srinivasa Rao, N.; Saikiran, V. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Enrichi, Francesco [Coordinamento Interuniversitario Veneto per le Nanotecnologie (CIVEN), via delle Industrie 5, Marghera, I-30175Venice (Italy); Trave, Enrico [Dipartimento di Chimica Fisica, Universita Ca' Foscari Venezia, Dorsoduro 2137, I-30123 Venice (Italy)

2011-09-01

Highlights: {yields} MOCVD grown GaN samples are irradiated with 80 MeV Ni ions at room temperature. {yields} PL and PLE studies have been carried out for band to band, BL and YL emissions. {yields} Ni ions irradiated GaN shows BL band at 450 nm besides YL band. {yields} Radiation annealed Ga vacancies have quenching effect on YL intensity. {yields} We speculated that BL and YL are associated with N and Ga vacancies, respectively. - Abstract: We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80 MeV Ni ions at a fluence of 1 x 10{sup 13} ions/cm{sup 2}. Irradiated GaN thin films were subjected to rapid thermal annealing for 60 s in nitrogen atmosphere to anneal out the defects. The effects of defects on luminescence were explored with photoluminescence measurements. Room temperature photoluminescence spectra from pristine sample revealed presence of band to band transition besides unwanted yellow luminescence. Irradiated GaN does not show any band to band transition but there is a strong peak at 450 nm which is attributed to ion induced defect blue luminescence. However, irradiated and subsequently annealed samples show improved band to band transitions and a significant decrease in yellow luminescence intensity due to annihilation of defects which were created during irradiation. Irradiation induced effects on yellow and blue emissions are discussed.

Photoluminescence study of CdSe nanorods embedded in a PVA matrix

Energy Technology Data Exchange (ETDEWEB)

Sharma, Mamta [Centre of Advanced Study in Physics, Department of Physics, Panjab University, Chandigarh 160014 (India); Tripathi, S.K., E-mail: surya@pu.ac.in [Centre of Advanced Study in Physics, Department of Physics, Panjab University, Chandigarh 160014 (India)

2013-03-15

Nanometer-sized semiconductor CdSe nanorods have been successfully grown within polyvinyl alcohol (PVA) matrix by in situ technique. PVA:n-CdSe nanorods are characterized by X-ray diffraction, transmission electron microscopy, UV-vis spectrophotometer and photoluminescence spectroscopy. The photoluminescence spectra of PVA:n-CdSe nanorods are studied at different excitation wavelengths. PVA:n-CdSe nanorods have demonstrated to exhibit strong and well-defined green photoluminescence emission. The long-term stability of the PL properties of PVA:n-CdSe nanorods is also investigated in view of possible applications of polymer nanocomposites. The linear optical constants such as the extinction coefficient (k), real ({epsilon}{sub 1}) and imaginary ({epsilon}{sub 2}) dielectric constant, optical conductivity ({sigma}{sub opt}) are calculated for PVA:n-CdSe nanorods. The optical properties i.e. good photostability and larger stokes shift suggesting to apply PVA:n-CdSe nanorods in bioimaging applications. - Highlights: Black-Right-Pointing-Pointer In situ synthesis of PVA:n-CdSe via chemical bath method at room temperature. {open_square} From TEM image, the three arm nanorods morphology of PVA:n-CdSe is obtained. Black-Right-Pointing-Pointer The optical constants i.e. n, k, {epsilon}{sub 1}, {epsilon}{sub 2} and {sigma}{sub opt} are calculated. Black-Right-Pointing-Pointer Exhibiting green band photoemission peak at 540 nm.

Photoluminescence properties of PZT 52/48 synthesized by microwave hydrothermal method using PVA with template

Energy Technology Data Exchange (ETDEWEB)

Teixeira, G.F., E-mail: guilmina@hotmail.com [Instituto de Quimica, Universidade Estadual Paulista, Departamento de Bioquimica e Tecnologia Quimica, Rua Francisco Degni s/n, Quitandinha, 14800-900 Araraquara, SP (Brazil); Gasparotto, G. [Instituto de Quimica, Universidade Estadual Paulista, Departamento de Bioquimica e Tecnologia Quimica, Rua Francisco Degni s/n, Quitandinha, 14800-900 Araraquara, SP (Brazil); Paris, E.C. [Empresa Brasileira de Pesquisa Agropecuaria, Embrapa Instrumentacao, Rua XV de novembro, 1452, Centro, 13.569-970 Sao Carlos, SP (Brazil); Zaghete, M.A.; Longo, E.; Varela, J.A. [Instituto de Quimica, Universidade Estadual Paulista, Departamento de Bioquimica e Tecnologia Quimica, Rua Francisco Degni s/n, Quitandinha, 14800-900 Araraquara, SP (Brazil)

2012-01-15

Lead Titanate Zirconate (PZT) perovskite powders were synthesized by microwave hydrothermal method (M-H) at 180 {sup o}C for different time periods (2, 4, 8 and 12 h) with the presence of aqueous polyvinyl alcohol (PVA) solution 0.36 g L{sup -1}. The X-Ray diffraction (XRD), SE-FEG as well as the measurements of photoluminescence (PL) emission were used for monitoring the formation of a perovskite phase with random polycrystalline distortion in the structure. Emission spectra with fixed excitation wavelength of 350 nm showed higher value for the powder obtained after undergoing 8 h of treatment. A theoretical model derived from previous calculations allows us to discuss the origin of photoluminescence emission in the powders, which can be further related to the local disorder in the network of both ZrO{sub 6} and TiO{sub 6} octahedral, and dodecahedral PbO{sub 12}. The new morphology initially observed from the PZT perovskite crystal growth bearing the shape of fine plates is found to be directly related to photoluminescence emission with energy lower than that present in the PZT with cube-like morphology that emits in 560 nm. - Highlights: > This work details the efficiency of microwave hydrothermal synthesis in obtaining PZT powders. > PVA is used as a crystallization agent of PZT particles. > PZT particles presented photoluminescent (PL) behavior. > There aren't previous reports of photoluminescent PZT obtained by microwave hydrothermal synthesis. > Photoluminescence is one more interesting property for technological applications this material.

Photoluminescence study of MBE grown InGaN with intentional indium segregation

International Nuclear Information System (INIS)

Cheung, Maurice C.; Chen, Fei; Furis, Madalina; Cartwright, Alexander N.; Namkoong, Gon; Doolittle, W. Alan; Pudavar, Haridas E.

2005-01-01

Proper control of MBE growth conditions has yielded an In 0.13 Ga 0.87 N thin film sample with emission consistent with In-segregation. The photoluminescence (PL) from this epilayer showed multiple emission components. Moreover, temperature and power dependent studies of the PL demonstrated that two of the components were excitonic in nature and consistent with indium phase separation. At 15 K, time resolved PL showed a non-exponential PL decay that was well fitted with the stretched exponential solution expected for disordered systems. Consistent with the assumed carrier hopping mechanism of this model, the effective lifetime, τ, and the stretched exponential parameter, β, decrease with increasing emission energy. Finally, room temperature micro-PL using a confocal microscope showed spatial clustering of low energy emission. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence study of MBE grown InGaN with intentional indium segregation

Energy Technology Data Exchange (ETDEWEB)

Cheung, Maurice C.; Chen, Fei; Furis, Madalina; Cartwright, Alexander N. [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Namkoong, Gon; Doolittle, W. Alan [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States); Pudavar, Haridas E. [Department of Chemistry, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States)

2005-05-01

Proper control of MBE growth conditions has yielded an In{sub 0.13}Ga{sub 0.87}N thin film sample with emission consistent with In-segregation. The photoluminescence (PL) from this epilayer showed multiple emission components. Moreover, temperature and power dependent studies of the PL demonstrated that two of the components were excitonic in nature and consistent with indium phase separation. At 15 K, time resolved PL showed a non-exponential PL decay that was well fitted with the stretched exponential solution expected for disordered systems. Consistent with the assumed carrier hopping mechanism of this model, the effective lifetime, {tau}, and the stretched exponential parameter, {beta}, decrease with increasing emission energy. Finally, room temperature micro-PL using a confocal microscope showed spatial clustering of low energy emission. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Photoluminescence of rare-earth-doped Ca4Ga2S7

International Nuclear Information System (INIS)

Tagiev, B.G.; Tagiev, O.B.; Dzhabbarov, R.B.; Musaeva, N.N.; Kasumov, U.F.

2001-01-01

One obtained Ca 4 Ga 2 S 7 :REM crystals and studied their photoluminescent (PL) properties. One used Nd, Ce, Pr and Tb as promoters. It is shown that in all investigated crystals one observed PL intensity maximums at λ 543 nm that result from intracentre transitions of Nd 3+ ions. The excitation energy is effectively transferred nonradiatingly from Ce 3+ , Pr 3+ , Tb 3+ ions to Nd 3+ ion. In the case, Ce 3+ , Pr 3+ , Tb 3+ are the effective ions-sensitizers [ru

Blue-green and red photoluminescence in CaTiO3:Sm

International Nuclear Information System (INIS)

Figueiredo, Alberthmeiry T. de; Longo, Valeria M.; Lazaro, Sergio de; Mastelaro, Valmor R.; De Vicente, Fabio S.; Hernandes, Antonio C.; Siu Li, Maximo; Varela, Jose A.; Longo, Elson

2007-01-01

Blue-green and red photoluminescence (PL) emission in structurally disordered CaTiO 3 :Sm (CT:Sm) powders was observed at room temperature with laser excitation at 350.7 nm. The perovskite-like titanate CT:Sm powders prepared by a soft chemical processing at different temperatures of annealing were structurally characterized by X-ray diffraction (XRD) and X-ray absorption near-edge structure (XANES). The results indicate that the generation of the broad PL band is related to order-disorder degree in the perovskite-like structure

Photoluminescence characterization of Dy3+ and Eu2+ ion in M5(PO4)3F (M = Ba, Sr, Ca) phosphors

International Nuclear Information System (INIS)

Nagpure, I.M.; Shinde, K.N.; Dhoble, S.J.; Kumar, Animesh

2009-01-01

Photoluminescence investigation of Eu and Dy activated phosphate based phosphors prepared by combustion synthesis, characterized by XRD (X-ray diffraction) and photoluminescence techniques, has been reported. PL excitation spectrum of M 5 (PO 4 ) 3 F:Dy phosphors shows the excitation peaks ranging from 300 to 400 nm due to 4f → 4f transitions of Dy 3+ ions. PL emission spectrum of Dy 3+ ion under 348 nm excitation gives PL emission at 482 nm (blue) due to 4 F 9/2 → 6 H 15/2 transitions, 574 nm (yellow) emission due to 4 F 9/2 → 6 H 13/2 transitions and 670 nm (red) due to 4 F 9/2 → 6 H 11/2 transitions, gives BYR (blue-yellow-red) emissions. The Eu 2+ broad band PL emission spectrum was observed in M 5 (PO 4 ) 3 F:Eu phosphor at 440 nm in the blue region of the spectrum due to 5d → 4f transition at 352 nm excitation. The 300-400 nm is Hg-free excitation (Hg excitation is 85% 254 nm wavelength of light and 15% other wavelengths), which is characteristic of solid-state lighting phosphors. Hence PL emission in divalent europium and trivalent dysprosium may be efficient photoluminescent materials for solid-state lighting phosphors.

Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

2013-12-04

We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

Photoluminescence study of high energy proton irradiation on Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Koo, Bonhyeong [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Lee, June Hyuk [Neutron Science Division, Korea Atomic Energy Research Institute (KAERI), 989-111 Daedeok-daero, Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Shin, Donghyeop [Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708 (United States); Ahn, Byung Tae, E-mail: btahn@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Shin, Byungha, E-mail: byungha@kaist.ac.kr [Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2016-03-31

We have studied the effect of proton irradiation on Cu(In,Ga)Se{sub 2} (CIGS) thin films using photoluminescence (PL). We used a 10 MeV proton beam with varying doses from 10{sup 9} to 10{sup 12} cm{sup −2}. Intensity-dependent low temperature PL measurements suggest that the proton irradiation does not create a new defect level but instead changes the number of preexisting defects in the detection range of the PL system. By comparing PL spectra after the proton irradiation with those obtained after thermal annealing under inert gas as well as under hydrogen gas ambient, we find that the irradiation-induced change in the defect structure does not originate from the incorporation of hydrogen but from energetics of the irradiating particles. Electrical resistivity of the proton irradiated CIGS thin films is shown to decrease after the proton irradiation, and this is explained by the reduction of the concentration of compensating donor-like defects, specifically selenium vacancies, based on the PL results. - Highlights: • Photoluminescence study of 10 MeV proton irradiation on CIGS at 10 K. • Irradiation modified population of existing defects without introducing new levels. • Changes in CIGS by 10 MeV irradiation are due to energetics of irradiating protons.

Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

International Nuclear Information System (INIS)

Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

2008-01-01

The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Bychto, Leszek, E-mail: leszek.bychto@tu.koszalin.pl; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia, E-mail: eumat@upvnet.upv.e [Technical University of Valencia, Nanophotonics Technology Center (Spain)

2008-12-15

The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 {Omega}cm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

Influence of preparation and storage conditions on photoluminescence of porous silicon powder with embedded Si nanocrystals

Science.gov (United States)

Bychto, Leszek; Balaguer, Maria; Pastor, Ester; Chirvony, Vladimir; Matveeva, Eugenia

2008-12-01

The time changes of photoluminescence (PL) characteristics of porous silicon (porSi) powder during storing in different ambients have been reported. A porous silicon material with embedded Si nanocrystals of size of few nanometers was prepared by an electrochemical method from 10 to 20 Ωcm p-type Si wafers, and both constant and pulse current anodization regimes were used. A powder with a submicron average particle size was obtained by simple mechanical lift-off of the porous layer followed by additional manual milling. The air, hexane, and water as storage media were used, and modification by a nonionic surfactant (undecylenic acid) of the porSi surface was applied in the latter case. Dependence of PL characteristics on preparation and storage conditions was then studied. A remarkable blue shift of a position of PL maximum was observed in time for porSi powders in each storage media. In water suspension a many-fold build-up (10-30) of PL intensity in a time scale of few days was accompanied by an observed blue shift. Photoluminescence time behavior of porSi powders was described by a known mechanism of the change of porSi PL from free exciton emission of Si nanocrystals to luminescence of localized oxidized states on the Si nanocrystal surface.

Structural, photoluminescence and XPS properties of Tm3þ ions in ZnO nanostructures

CSIR Research Space (South Africa)

Kabongo, GL

2017-07-01

Full Text Available of photoluminescence (PL) spectroscopy. Finally, Tm 4d core level was detected in ZnO: 0.5 mol% Tm(sup3+) sample from high resolution X-Ray Photoelectron Spectroscopy (XPS) scan....

Photoluminescence in Carborane-Stilbene Triads: A Structural, Spectroscopic, and Computational Study.

Science.gov (United States)

Cabrera-González, Justo; Viñas, Clara; Haukka, Matti; Bhattacharyya, Santanu; Gierschner, Johannes; Núñez, Rosario

2016-09-12

A set of triads in which o- and m-carborane clusters are bonded to two stilbene units through Ccluster -CH2 bonds was synthesized, and their structures were confirmed by X-ray diffraction. A study on the influence of the o- and m- isomers on the absorption and photoluminescence properties of the stilbene units in solution revealed no charge-transfer contributions in the lowest excited state, as confirmed by (TD)DFT calculations. The presence of one or two B-I groups in m-carborane derivatives does not affect the emission properties of the stilbenes in solution, probably due to the rather large distance between the iodo substituents and the fluorophore. Nevertheless, a significant redshift of the photoluminescence (PL) emission maximum in the solid state (thin films and powder samples) compared to solution was observed; this can be traced back to PL sensitization, most probably due to more densely packed stilbene moieties. Remarkably, the PL absolute quantum yields of powder samples are significantly higher than those in solution, and this was attributed to the restricted environment and the aforementioned sensitization. Thus, the bonding of the carborane clusters to two stilbene units preserves their PL behavior in solution, but produces significant changes in the solid state. Furthermore, iodinated species can be considered to be promising precursors for theranostic agents in which both imaging and therapeutic functions could possibly be combined. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN

International Nuclear Information System (INIS)

Kim, S.; Henry, R. L.; Wickenden, A. E.; Koleske, D. D.; Rhee, S. J.; White, J. O.; Myoung, J. M.; Kim, K.; Li, X.; Coleman, J. J.

2001-01-01

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies have been carried out at 6 K on the ∼1540 nm 4 I 13/2 - 4 I 15/2 emissions of Er 3+ in Er-implanted and annealed GaN. These studies revealed the existence of multiple Er 3+ centers and associated PL spectra in Er-implanted GaN films grown by metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy. The results demonstrate that the multiple Er 3+ PL centers and below-gap defect-related absorption bands by which they are selectively excited are universal features of Er-implanted GaN grown by different techniques. It is suggested that implantation-induced defects common to all the GaN samples are responsible for the Er site distortions that give rise to the distinctive, selectively excited Er 3+ PL spectra. The investigations of selectively excited Er 3+ PL and PLE spectra have also been extended to Er-implanted samples of Mg-doped GaN grown by various techniques. In each of these samples, the so-called violet-pumped Er 3+ PL band and its associated broad violet PLE band are significantly enhanced relative to the PL and PLE of the other selectively excited Er 3+ PL centers. More importantly, the violet-pumped Er 3+ PL spectrum dominates the above-gap excited Er 3+ PL spectrum of Er-implanted Mg-doped GaN, whereas it was unobservable under above-gap excitation in Er-implanted undoped GaN. These results confirm the hypothesis that appropriate codopants can increase the efficiency of trap-mediated above-gap excitation of Er 3+ emission in Er-implanted GaN. [copyright] 2001 American Institute of Physics

Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1-xN x structures

International Nuclear Information System (INIS)

Hamdouni, A.; Bousbih, F.; Ben Bouzid, S.; Oueslati, M.; Chtourou, R.; Harmand, J.C.

2005-01-01

We report a low-temperature photoluminescence spectra (LTPL) of GaAs 1-x N x layers and two-dimension electron gas (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure grown on GaAs substrates by molecular beam epitaxy (MBE) with low nitrogen content [N] = 2 x 10 18 cm -3 . At low temperature, PL spectra of GaAs 1-x N x layers are governed by several features associate to the excitons bound to nitrogen complexes, these features disappear in (2DEG) GaAs 1-x N x /AlGaAs modulation doped heterostructure and the PL peak energy decrease with the laser power excitation. This effect is explained by the strongly coupling of the (2DEG) fundamental state with the nitrogen localized states. An activated energy of about 55 meV is deduced by photoluminescence measurements in the 10-300 K range for a laser power excitation P = 6 W/cm 2

Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

Science.gov (United States)

Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

2018-01-01

High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.

Dominant ultraviolet-blue photoluminescence of ZnO embedded into synthetic opal

International Nuclear Information System (INIS)

Abrarov, S.M.; Yuldashev, Sh.U.; Kim, T.W.; Lee, S.B.; Kwon, H.Y.; Kang, T.W.

2005-01-01

The temperature-dependent photoluminescence (PL) characteristics of zinc oxide (ZnO) embedded into the voids of synthetic opal were studied. ZnO was infiltrated into opal from aqueous solution with zinc nitrate precursor followed by thermal annealing. The PL spectra of the ZnO powder exhibit very high and broad emission peaks in the green region due to crystal defects, such as oxygen vacancies and zinc ion interstitials. In contrast to the PL spectra of ZnO powder, nanocrystals of ZnO embedded into the voids of FCC packed opal matrix exhibit dominant ultraviolet (UV)-blue and rapidly decreasing green PL emissions with decreasing temperature. The temperature-dependent PL characteristics show that the green band suppression in the ZnO nanocrystals is due to the influence of photonic crystal. The infiltration of nanoparticles into synthetic opal may be used for the fabrication of polycrystalline ZnO with dominant UV-blue PL. These results indicate that the luminescent materials embedded into photonic crystal may be promising for the fabrication of the RGB pixels in full-color displays

Origin of stretched-exponential photoluminescence relaxation in size-separated silicon nanocrystals

Directory of Open Access Journals (Sweden)

Samuel L. Brown

2017-05-01

Full Text Available A detailed understanding of the photoluminescence (PL from silicon nanocrystals (SiNCs is convoluted by the complexity of the decay mechanism, including a stretched-exponential relaxation and the presence of both nanosecond and microsecond time scales. In this publication, we analyze the microsecond PL decay of size-resolved SiNC fractions in both full-spectrum (FS and spectrally resolved (SR configurations, where the stretching exponent and lifetime are used to deduce a probability distribution function (PDF of decay rates. For the PL decay measured at peak emission, we find a systematic shift and narrowing of the PDF in comparison to the FS measurements. In a similar fashion, we resolve the PL lifetime of the ‘blue’, ‘peak’, and ‘red’ regions of the spectrum and map PL decays of different photon energy onto their corresponding location in the PDF. A general trend is observed where higher and lower photon energies are correlated with shorter and longer lifetimes, respectively, which we relate to the PL line width and electron-phonon coupling.

Presence of photoluminescent carbon dots in Nescafe® original instant coffee: applications to bioimaging.

Science.gov (United States)

Jiang, Chengkun; Wu, Hao; Song, Xiaojie; Ma, Xiaojun; Wang, Jihui; Tan, Mingqian

2014-09-01

The presence of the carbon dots (C-dots) in food is a hotly debated topic and our knowledge about the presence and the use of carbon dots (C-dots) in food is still in its infancy. We report the finding of the presence of photoluminescent (PL) C-dots in commercial Nescafe instant coffee. TEM analysis reveals that the extracted C-dots have an average size of 4.4 nm. They were well-dispersed in water and strongly photoluminescent under the excitation of ultra-violet light with a quantum yield (QY) about 5.5%, which were also found to possess clear upconversion PL properties. X-ray photoelectron spectroscopy characterization demonstrates that the C-dots contain C, O and N three elements with the relative contents ca. 30.1, 62.2 and 7.8%. The X-ray diffraction (XRD) analysis indicates that the C-dots are amorphous. Fourier-transform infrared (FTIR) spectra were employed to characterize the surface groups of the C-dots. The C-dots show a pH independent behavior by varying the pH value from 2 to 11. The cytotoxicity study revealed that the C-dots did not cause any toxicity to cells at a concentration as high as 20 mg/mL. The C-dots have been directly applied in cells and fish imaging, which suggested that the C-dots present in commercial coffee may have more potential biological applications. Copyright © 2014. Published by Elsevier B.V.

The down-conversion and up-conversion photoluminescence properties of Na0.5Bi0.5TiO3:Yb3+/Pr3+ ceramics

International Nuclear Information System (INIS)

Huang, Yinpeng; Luo, Laihui; Wang, Jia; Zuo, Qianghui; Yao, Yongjie; Li, Weiping

2015-01-01

Na 0.5 Bi 0.5−x−y Yb x Pr y TiO 3 (NBT:xYb/yPr) ceramics with different Yb and Pr contents are prepared. Both the down-conversion (DC) and up-conversion (UC) photoluminescence (PL) of the ceramics via 453 and 980 nm excitation, respectively, are investigated. The effect of Yb 3+ and Pr 3+ doping contents on the DC and UC PL is significantly different from each other. Furthermore, the UC PL of the ceramics as a function of temperatures is measured to investigate the UC process in detail. Based on energy level diagram of Pr 3+ and Yb 3+ ions and the DC and UC PL spectra, the DC and UC PL mechanisms of Pr 3+ and Yb 3+ ions are discussed. Especially, the UC PL mechanism is clarified, which is different from the previously reported literature. Also, the temperature sensing properties of the ceramics are studied based on the photoluminescence ratio technique, using the thermal coupling energy levels of Pr 3+

Synthesis of YVO4:Eu3+/YBO3Heteronanostructures with Enhanced Photoluminescence Properties

Directory of Open Access Journals (Sweden)

Hu Haihua

2009-01-01

Full Text Available Abstract Novel YVO4:Eu3+/YBO3core/shell heteronanostructures with different shell ratios (SRs were successfully prepared by a facile two-step method. X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy were used to characterize the heteronanostructures. Photoluminescence (PL study reveals that PL efficiency of the YVO4:Eu3+nanocrystals (cores can be improved by the growth of YBO3nanocoatings onto the cores to form the YVO4:Eu3+/YBO3core/shell heteronanostructures. Furthermore, shell ratio plays a critical role in their PL efficiency. The heteronanostructures (SR = 1/7 exhibit the highest PL efficiency; its PL intensity of the5D0–7F2emission at 620 nm is 27% higher than that of the YVO4:Eu3+nanocrystals under the same conditions.

Photoluminescence characteristics of InAs quantum dots grown by STM/MBE site-control technique

Energy Technology Data Exchange (ETDEWEB)

Nishikawa, S.; Kohmoto, S.; Nakamura, H.; Ishikawa, T.; Asakawa, K.; Wada, O. [Femtosecond Technology Research Association, Tsukuba, Ibaraki (Japan). FESTA Lab.

2001-03-08

This paper describes micro-photoluminescence (PL) analysis of site-controlled QDs (SCQDs) grown using a novel in-situ MBE growth technique in which sites of self-assembled InAs QDs are controlled by forming nanometer deposits using a scanning tunneling microscope (STM) probe. We found from the temperature dependence of PL that the carrier collection at QDs at low temperature is limited by carrier diffusion in the wetting layer. The analysis of PL data considering this effect has indicated that individual QDs grown have high crystalline quality in spite of the addition of an artificial STM process during growth. (orig.)

Photoluminescence from Cd{sub x}Hg{sub 1-x}Te

Energy Technology Data Exchange (ETDEWEB)

Breivik, M; Selvig, E; Tonheim, C R; Brendhagen, E; Brudevoll, T; Rheenen, A D van; Steen, H; Nicolas, S; Lorentzen, T; Haakenaasen, R [Norwegian Defence Research Establishment, P O Box 25, N-2027 Kjeller (Norway)], E-mail: magnus.breivik@gmail.com

2008-03-15

We present important aspects of photoluminescence (PL) of Cd{sub x}Hg{sub 1-x}Te in the infrared part of the spectrum where background thermal radiation significantly affects the PL spectrum. We show how the background spectrum can be removed from the data. We also show how the wavelength of the excitation laser affects the relative intensity of the PL peaks from a multi-layer structure. Finally, we present temperature dependent PL of a Cd{sub 0.36}Hg{sub 0.64}Te/Cd{sub 0.61}Hg{sub 0.39}Te multiple quantum well structure grown on a 4 {mu}m thick Cd{sub 0.36}Hg{sub 0.64}Te buffer layer. We attribute the low temperature peak from the buffer layer to impurities. The impurity levels are depopulated as the temperature increases, resulting in a decreased PL peak intensity. Above {approx}200 K a band-to-band peak from the buffer layer is observed. The quantum well peak persists up to {approx}200 K.

Crystal habit dependent quantum confined photoluminescence of zinc oxide nanostructures

International Nuclear Information System (INIS)

Arellano, Ian Harvey J.; Payawan, Leon Jr. M.; Sarmago, Roland V.

2008-01-01

Diverse zinc oxide crystal habits namely wire, rods, tubes, whiskers and tetrapods were synthesized via hydrothermal and carbothermal reduction routes. A vapor current induced regionalization in the carbothermal synthesis lead to the isolation of these crystal habits for characterization. The surface morphology of the nanostructures was analyzed via field emission scanning electron microscopy (FESEM). The morphology and crystallinity of the as-synthesized nanostructure architectural motifs were related to their photoluminescence (PL). The photoluminescence at 157 nm was taken using F2 excimer laser and a crystal habit dependent response was observed. X-ray diffraction (XRD) analyses were conducted to deduce the degree of crystallinity showing results consistent with the excitonic emission at the band edge and visible emission at the electron-hole recombination sites. The presence of minimal crystal defects which gave the green emission was supported by energy dispersive spectroscopy (EDS) data. Transmission spectroscopy for the tetrapods exhibited an interesting PL reduction associated with high-energy deep traps in the nanostructures. Furthermore, some intensity dependent characteristics were deduced indicating quantum confined properties of these nano structures. (author)

Er{sup 3+}-doped fluorotellurite thin film glasses with improved photoluminescence emission at 1.53 µm

Energy Technology Data Exchange (ETDEWEB)

Morea, R. [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain); Miguel, A. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n, 48013 Bilbao (Spain); Fernandez, T.T. [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain); Maté, B. [Instituto de Estructura de la Materia, CSIC, Serrano 121, 28006 Madrid (Spain); Ferrer, F.J. [Centro Nacional de Aceleradores, Univ. Sevilla-CSIC, Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Maffiotte, C. [CIEMAT, Departamento de Tecnología, Av. Complutense 40, 28040 Madrid (Spain); Fernandez, J.; Balda, R. [Departamento de Física Aplicada I, Escuela Superior de Ingeniería, Universidad del País Vasco UPV/EHU, Alda. Urquijo s/n, 48013 Bilbao (Spain); Materials Physics Center CSIC-UPV/EHU and Donostia International Physics Center, 20018 San Sebastian (Spain); Gonzalo, J., E-mail: j.gonzalo@csic.es [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain)

2016-02-15

Transparent oxyfluoride tellurite thin film glasses have been produced at room temperature by pulsed laser deposition in O{sub 2} atmosphere from an Er-doped TeO{sub 2}–ZnO–ZnF{sub 2} bulk glass. Thin film glasses present high refractive index (n≥1.95) and good transparency (T≥80%) in the visible (λ>400 nm) and near infrared range. However, their photoluminescence (PL) performance at 1.5 μm is poor. Thermal annealing at moderate temperatures (T≤315 °C), well below glass crystallization, increases the PL intensity by more than one order of magnitude as well as the PL lifetime up to τ≈3.3 ms. Film glasses present a larger fraction of TeO{sub 3} trigonal pyramids than the bulk glass and a very large OH{sup −} content. The structure and composition of film glasses do not change upon annealing and thus the activation of the PL response is related to the improvement of the surface morphology and the significant decrease of their OH{sup −} content. - Highlights: • Transparent Er-doped fluorotellurite films are produced by pulsed laser deposition. • Post-deposition thermal treatments are required to activate Er{sup 3+} photoluminescence. • {sup 4}I{sub 13/2}→{sup 4}I{sub 15/2} emission spectrum is similar for bulk and annealed film glasses. • {sup 4}I{sub 13/2} level fluorescence decay is shorter in annealed films than in bulk glasses. • Photoluminescence response relates to hydroxyl groups concentration in film glasses.

Photoluminescence inhomogeneity and excitons in CVD-grown monolayer WS2

Science.gov (United States)

Ren, Dan-Dan; Qin, Jing-Kai; Li, Yang; Miao, Peng; Sun, Zhao-Yuan; Xu, Ping; Zhen, Liang; Xu, Cheng-Yan

2018-06-01

Transition metal dichalcogenides two-dimensional materials are of great importance for future electronic and optoelectronic applications. In this work, triangular WS2 monolayers with size up to 130 μm were prepared via chemical vapor deposition method. WS2 monolayers presented uniform Raman intensity, while quenched photoluminescence (PL) was observed in the center. The PL quenching in the central part of WS2 monolayer flakes was attributed to the gradually increasing sulfur vacancies toward the center. The proportion of negative trion (X-) in PL spectrum increases with increasing sulfur vacancies in WS2. The enhanced binding energy of X- suggests higher Fermi level and n-doping level with larger sulfur vacancy concentration. Our findings may be beneficial to the development of integrated devices, and also explore the defect-induced optical and electrical properties for nanophotonics.

Photoluminescence enhancement of porous silicon particles by microwave-assisted activation

Energy Technology Data Exchange (ETDEWEB)

Xia, Bing [Key Laboratory of Forest Genetics and Biotechnology (Ministry of Education of China), Nanjing Forestry University, Nanjing 210037 (China); Advanced Analysis and Testing Center, Nanjing Forestry University, Nanjing 210037 (China); Zhang, Wenyi; Dong, Chen; Shi, Jisen [Key Laboratory of Forest Genetics and Biotechnology (Ministry of Education of China), Nanjing Forestry University, Nanjing 210037 (China); Bao, Weiyi [Advanced Analysis and Testing Center, Nanjing Forestry University, Nanjing 210037 (China); Zhang, Junfeng [State Key Laboratory of Pharmaceutical Biotechnology, School of Life Sciences, Nanjing University, Nanjing 210093 (China)

2012-11-15

Photoluminescence (PL) of porous silicon (PSi) particles can be significantly enhanced in some organic solvents (i.e., ethanol or dimethyl sulfoxide) under microwave irradiation. Fourier transform infrared spectra, dynamic-light-scattering measurements, and scanning electron microscopy had been adopted to explore the mechanism of PL enhancement of PSi particles under microwave irradiation, which is attributed to the formation of higher porosity and the growth of silicon oxide by microwave-assisted wet etching. Compared with that fabricated by ultrasonication, smaller luminescent PSi nanoparticles (average size {proportional_to}60 nm) with stronger orange-red fluorescence (PL quantum yield {proportional_to}14.8%) and higher dispersibility can be large-scale prepared for cellular imaging and drug delivery in biomedical applications. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Structural, optical, and photoluminescence characterization of electron beam evaporated ZnS/CdSe nanoparticles thin films

Science.gov (United States)

Mohamed, S. H.; Ali, H. M.

2011-01-01

Structural, optical, and photoluminescence investigations of ZnS capped with CdSe films prepared by electron beam evaporation are presented. X-ray diffraction analysis revealed that the ZnS/CdSe nanoparticles films contain cubic cadmium selenide and hexagonal zinc sulfide crystals and the ZnS grain sizes increased with increasing ZnS thickness. The refractive index was evaluated in terms of envelope method, which has been suggested by Swanepoel in the transparent region. The refractive index values were found to increase with increasing ZnS thickness. However, the optical band gap and the extinction coefficient were decreased with increasing ZnS thickness. Photoluminescence (PL) investigations revealed the presence of two broad emission bands. The ZnS thickness significantly influenced the PL intensities.

Femtosecond transient photoluminescence of the substituted poly(diphenylacetulene)s.

Science.gov (United States)

Piskun, N. V.; Wang, D. K.; Lim, H.; Epstein, A. J.; Vanwoerkom, L. D.; Gustafson, T. L.

2000-03-01

We present the results of a femtosecond transient photoluminescence (PL) study of solutions of two derivatives of substituted poly(diphenylacetylene) using an up-conversion technique. n-Butyl (nBu) and p-carbazole (Cz) substituted poly(diphenylacetylene), PDPA-nBu and PDPA-Cz respectively, have band gaps determined by maxima in the slope of absorption vs. energy of 2.75 eV and 2.63 eV. The steady state emission peaks are at 2.4 eV for PDPA-nBu and at 2.3 eV for PDPA-Cz respectively. The PL peak for PDPA-Cz is red shifted in comparison to the PL peak for PDPA-nBu. Roles of phenyl groups, electron donating effect of the carbazole side units and planarity of the backbone are discussed. Exciting at 3.1 eV, the fs PL shows a faster decay for PDPA-Cz than that for PDPA-nBu, in accord with the decrease of PL quantum efficiency of PDPA-Cz. The 200 fs - 80 ps PL(t) agrees with ~1 ns lifetime. The PDPA-Cz has larger red shift in the 0.2-20 ps time frame. The origin of that shift will be discussed. This work is supported in part by ONR.

Reversible Concentration-Dependent Photoluminescence Quenching and Change of Emission Color in CsPbBr3 Nanowires and Nanoplatelets.

Science.gov (United States)

Di Stasio, Francesco; Imran, Muhammad; Akkerman, Quinten A; Prato, Mirko; Manna, Liberato; Krahne, Roman

2017-06-15

We discuss the photoluminescence (PL) of quantum-confined CsPbBr 3 colloidal nanocrystals of two different shapes (nanowires and nanoplatelets) at different concentrations in solution and in solid-state films. Upon increasing the nanocrystal concentration in solution, a constant drop in photoluminescence quantum yield is observed, accompanied by a significant PL red shift. This effect is reversible, and the original PL can be restored by diluting to the original concentration. We show that this effect can be in part attributed to self-absorption and partly to aggregation. In particular, for nanoplatelets, where the aggregation is mostly irreversible, while the self-absorption effect is reversible, the two contributions can be well separated. Finally, when dry solid-state films are prepared, the emission band is shifted into the green spectral region, close to the bulk CsPbBr 3 band gap, thus preventing blue emission from such films.

Photoluminescent properties of nanoporous anodic alumina doped with manganese ions

Energy Technology Data Exchange (ETDEWEB)

Gasenkova, I.V. [State Research and Production Association ' Optic, Optoelectronic and Laser techniques”, 68 Nezavisimosti Ave., Minsk 220072 (Belarus); Mukhurov, N.I., E-mail: n.mukhurov@ifanbel.bas-net.by [State Research and Production Association ' Optic, Optoelectronic and Laser techniques”, 68 Nezavisimosti Ave., Minsk 220072 (Belarus); Zhvavyi, S.P.; Kolesnik, E.E. [State Research and Production Association ' Optic, Optoelectronic and Laser techniques”, 68 Nezavisimosti Ave., Minsk 220072 (Belarus); Stupak, A.P. [B.I.Stepanov Institute of Physics of the National Academy of Sciences of Belarus, 68 Nezavisimosti Ave., Minsk 220072 (Belarus)

2017-05-15

The results are presented of a comparative study of photoluminescent (PL) properties of unalloyed and Mn-alloyed porous anodic alumina (PAA) subjected to annealing at temperatures in the range of ГђВў{sub a}=200–1300 °ГђВЎ. The possibility of alloying of PAA with metal atoms is illustrated through an example of Mn atoms, and the effect of this impurity on the optical properties of aluminum oxide is examined. Alloying of PAA with Mn ions leads to the formation of complex defects including manganese ions and oxygen vacancies. The difference observed in the spectral dependences of the PL intensity of alloyed and unalloyed specimens is explained by the change in the valence of manganese ions in the complex defects. A decrease has been discovered in the PL intensity of the PL bands and R-lines of Mn and Cr ions in the α-phase under prolonged UV-exposure of the alloyed samples.

Photoluminescence of electron beam evaporated CaS:Bi thin films

CERN Document Server

Smet, P F; Poelman, D R; Meirhaeghe, R L V

2003-01-01

For the first time, the photoluminescence (PL) of electron beam evaporated CaS:Bi thin films is reported. Luminescent CaS:Bi powder prepared out of aqueous solutions was used as source material. The influence of substrate temperature on the PL and the morphology of thin films is discussed, and an optimum is determined. Substrate temperatures between 200 deg. C and 300 deg. C lead to good quality thin films with sufficient PL intensity. As-deposited thin films show two emission bands, peaking at 450 and 530 nm. Upon annealing the emission intensity increases, and annealing at 800 deg. C is sufficient to obtain a homogeneously blue emitting thin film (CIE colour coordinates (0.17; 0.12)), thanks to a single remaining emission band at 450 nm. The influence of ambient temperature on the PL of CaS:Bi powder and thin films was also investigated and it was found that CaS:Bi thin films show a favourable thermal quenching behaviour near room temperature.

Effect of Mg Doping on the Photoluminescence of GaN:Mg Films by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

International Nuclear Information System (INIS)

Sui Yan-Ping; Yu Guang-Hui

2011-01-01

We investigate undoped GaN and Mg-doped GaN grown by rf plasma-assisted molecular beam epitaxy (MBE) with different Mg concentrations by photoluminescence (PL) at low temperature, Hall-effect and XRD measurements. In the PL spectra of lightly Mg-doped GaN films, a low intensity near band edge (NBE) emission and strong donor-acceptor pair (DAP) emission with its phonon replicas are observed. As the Mg concentration is increased, the DAP and NBE bands become weaker and a red shift of these bands is observed in the PL spectra. Yellow luminescence (YL) is observed in heavily Mg-doped GaN. The x-ray diffraction is employed to study the structure of the films. Hall measurement shows that there is a maximum value (3.9 × 10 18 cm −3 ) of hole concentration with increasing Mg source temperature for compensation effect. PL spectra of undoped GaN are also studied under N-rich and Ga-rich growth conditions. Yellow luminescences of undoped Ga-rich GaN and heavily Mg-doped GaN are compared, indicating the different origins of the YL bands. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Micropatterned 2D Hybrid Perovskite Thin Films with Enhanced Photoluminescence Lifetimes.

Science.gov (United States)

Kamminga, Machteld E; Fang, Hong-Hua; Loi, Maria Antonietta; Ten Brink, Gert H; Blake, Graeme R; Palstra, Thomas T M; Ten Elshof, Johan E

2018-04-18

The application of luminescent materials in display screens and devices requires micropatterned structures. In this work, we have successfully printed microstructures of a two-dimensional (2D), orange-colored organic/inorganic hybrid perovskite ((C 6 H 5 CH 2 NH 3 ) 2 PbI 4 ) using two different soft lithography techniques. Notably, both techniques yield microstructures with very high aspect ratios in the range of 1.5-1.8. X-ray diffraction reveals a strong preferential orientation of the crystallites along the c-axis in both patterned structures, when compared to nonpatterned, drop-casted thin films. Furthermore, (time-resolved) photoluminescence (PL) measurements reveal that the optical properties of (C 6 H 5 CH 2 NH 3 ) 2 PbI 4 are conserved upon patterning. We find that the larger grain sizes of the patterned films with respect to the nonpatterned film give rise to an enhanced PL lifetime. Thus, our results demonstrate easy and cost-effective ways to manufacture patterns of 2D organic/inorganic hybrid perovskites, while even improving their optical properties. This demonstrates the potential use of color-tunable 2D hybrids in optoelectronic devices.

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

International Nuclear Information System (INIS)

Naddaf, M; Saloum, S; Hamadeh, H

2007-01-01

Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

Science.gov (United States)

Naddaf, M.; Saloum, S.; Hamadeh, H.

2007-07-01

Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 °C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups.

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

Energy Technology Data Exchange (ETDEWEB)

Naddaf, M; Saloum, S; Hamadeh, H [Department of Physics, Atomic Energy Commission of Syria (AECS), PO Box 6091, Damascus (Syrian Arab Republic)

2007-07-07

Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups.

Photoluminescence from PP-HMDSO thin films deposited using a remote plasma of 13.56 MHz hollow cathode discharge

International Nuclear Information System (INIS)

Naddaf, M.; Saloum, S.; Hamadeh, H.

2008-01-01

Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in a low pressure-low temperature remote plasma ignited in a 13.56 MHz hollow cathode discharge reactor, using pure HMDSO as a monomer and Ar as a feed gas. The substrate temperature during the deposition was as low as 40 deg. C and the total pressure was about 0.03 mbar. Optical emission spectroscopy (OES) has been used as in situ tool for monitoring the different chemical species present in the plasma during deposition processes. The deposited PP-HMDSO films showed a strong, broad 'green/yellow' PL band. The RF power and the flow rate of the HMDSO monomer are found to have a significant impact on the PL intensity of the deposited film. The changes in the chemical bonding of the film as a function of deposition parameters have been investigated by using the Fourier transform infrared (FTIR) spectroscopic analysis and are related to PL and OES results. The 'green/yellow' PL band is ascribed to chemical groups and bonds of silicon, hydrogen and/or oxygen constituting the films, in particular, SiH, SiO bonds and silanol Si-O-H groups. (Authors)

Preparation of Polyimide/Zinc Oxide Nanocomposite Films via an Ion-Exchange Technique and Their Photoluminescence Properties

Directory of Open Access Journals (Sweden)

Shuxiang Mu

2011-01-01

Full Text Available Polyimide (PI composite films with ZnO nanoparticles embedded in the surface layer were prepared by alkali hydrolyzation following ion exchange in Zn(NO32 solution and thermal treatment of the zinc ion-doped PI films in air atmosphere. The effect of alkali treatment, ion exchange, and thermal treatment conditions was investigated in relation to the amount of zinc atomic loading, morphology, photoluminescence (PL, and thermal properties of the PI/ZnO composite films using ICP, XPS, FE-SEM, TEM, Raman microscope, TGA, and DSC. ZnO nanoparticles were formed slowly and dispersed uniformly in the surface-modified layers of PI films with an average diameter of 20 nm. The PL spectra of all the PI/ZnO nanocomposite films obtained at 350°C/7 h possessed a weak ultraviolet emission peak and a broad and strong visible emission band. The PI/ZnO nanocomposite films maintained the excellent thermal property of the host PI films.

A novel approach to obtain highly intense self-activated photoluminescence emissions in hydroxyapatite nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Machado, Thales R. [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil); QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Sczancoski, Júlio C. [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil); Beltrán-Mir, Héctor [QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Nogueira, Içamira C. [PPGEM-IFMA, Instituto Federal de Educação, Ciência e Tecnologia do Maranhão, 65030-005 São Luís, MA (Brazil); Li, Máximo S. [IFSC-USP, Universidade de São Paulo, P.O. Box 369, 13560-970 São Carlos, SP (Brazil); Andrés, Juan [QFA-UJI, Universitat Jaume I, 12071 Castellón (Spain); Cordoncillo, Eloisa [QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Longo, Elson, E-mail: elson.liec@gmail.com [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil)

2017-05-15

Defect-related photoluminescence (PL) in materials have attracted interest for applications including near ultraviolet (NUV) excitable light-emitting diodes and in biomedical field. In this paper, hydroxyapatite [Ca{sub 10}(PO{sub 4}){sub 6}(OH){sub 2}] nanorods with intense PL bands (bluish- and yellowish-white emissions) were obtained when excited under NUV radiation at room temperature. These nanoparticles were synthesized via chemical precipitation at 90 °C followed by distinct heat treatments temperatures (200–800 °C). Intense and broad emission profiles were achieved at 350 °C (380–750 nm) and 400 °C (380–800 nm). UV–Vis spectroscopy revealed band gap energies (5.58–5.78 eV) higher than the excitation energies (~3.54 and ~2.98 eV at 350 and 415 nm, respectively), confirming the contribution of defect energy levels within the forbidden zone for PL emissions. The structural features were characterized by X-ray diffraction, Rietveld refinement, thermogravimetric analysis, and Fourier transform infrared spectroscopy. By means of these techniques, the relation between structural order-disorder induced by defects, chemical reactions at both lattice and surface of the materials as well as the PL, without activator centers, was discussed in details. - Graphical abstract: The self-activated photoluminescence emissions of chemically precipitated hydroxyapatite nanorods were improved by different heat treatment temperatures. - Highlights: • HA nanorods were synthesized with improved self-activated PL at room temperature. • PL profile and intensity dependents on the temperature of posterior heat treatments. • Bluish- and yellowish-white emissions under NUV excitation (350 and 415 nm). • Broad and intense profiles achieved at 350 °C (380–750 nm) and 400 °C (380–800 nm). • PL from the e′–h{sup •} recombination between defect energy levels within the band gap.

Structural, optical, photoluminescence and photocatalytic assessment of Sr-doped ZnO nanoparticles

International Nuclear Information System (INIS)

Pradeev Raj, K.; Sadaiyandi, K.; Kennedy, A.; Thamizselvi, R.

2016-01-01

ZnO nanoparticles (NPs) and Strontium doped ZnO nanoparticles (2–6 mol %) (SZ-NPs) were synthesized via Co-precipitation method. Synthesized samples were investigated by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Elemental dispersive spectroscopy (EDS), UV–visible, and Photoluminescence (PL) spectroscopy. Photocatalytic studies for Rhodamine B (RhB) dye in aqueous solution under UV–Vis radiation. XRD analysis confirms that all the samples have hexagonal wurtzite structure. The average crystallite size of the nanoparticles was in the range of 29–51 nm. From the Williamson –Hall (W-H) plot, a positive slope is inferred for pure and SZ-NPs, confirming the presence of tensile strain. SEM images reveal the synthesized NPs are in nanometer range with various shapes are observed. The presence of strontium (Sr) in the host lattice was confirmed by EDS spectroscopy. The optical analysis shows the absorption decreases on doping and shifts slightly towards the longer wavelength region. The band gap energy (Eg) decreases (3.32–3.03 eV) with the increase of Sr dopant concentration. The photoluminescence (PL) spectrum reveals the UV emission is strong near the band-edge region (NBE) (392 nm) and intrinsic defects resulted in series of Vis emissions around 400–560 nm. Kinetic studies on RhB dye indicates the degradation rate has increased with dopant concentration. The improved photocatalytic activity is observed due to the efficient charge separation, improved visible light absorption, inhibition of the electron-hole pair's recombination and better adsorptive of RhB dye molecule on the surface of SZ-NPs. Moreover, the reduction in the total organic carbon (TOC) results reveals the improved photocatalytic activity of strontium doped ZnO NPs. - Highlights: • Effective synthesis of ZnO and Sr−ZnO nanoparticles by co-precipitation method. • Samples were characterized by XRD, SEM, EDS, UV–Vis and PL technique. • Higher optical absorption and

Structural, optical, photoluminescence and photocatalytic assessment of Sr-doped ZnO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Pradeev Raj, K., E-mail: pradeevraj@gmail.com [Research and Development Centre, Bharathiar University, Coimbatore, 641 046, Tamilnadu (India); Department of Physics, CSI College of Engineering, Ooty, The Nilgiris, 643 215, Tamil Nadu (India); Sadaiyandi, K. [Department of Physics, Alagappa Government Arts College, Karaikudi, Sivagangai, 630 003, Tamil Nadu (India); Kennedy, A. [Department of Physics, CSI College of Engineering, Ooty, The Nilgiris, 643 215, Tamil Nadu (India); Thamizselvi, R. [Department of Chemistry, L.R.G. Govt Arts College for Women, Tirupur, 641604, Tamil Nadu (India)

2016-11-01

ZnO nanoparticles (NPs) and Strontium doped ZnO nanoparticles (2–6 mol %) (SZ-NPs) were synthesized via Co-precipitation method. Synthesized samples were investigated by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Elemental dispersive spectroscopy (EDS), UV–visible, and Photoluminescence (PL) spectroscopy. Photocatalytic studies for Rhodamine B (RhB) dye in aqueous solution under UV–Vis radiation. XRD analysis confirms that all the samples have hexagonal wurtzite structure. The average crystallite size of the nanoparticles was in the range of 29–51 nm. From the Williamson –Hall (W-H) plot, a positive slope is inferred for pure and SZ-NPs, confirming the presence of tensile strain. SEM images reveal the synthesized NPs are in nanometer range with various shapes are observed. The presence of strontium (Sr) in the host lattice was confirmed by EDS spectroscopy. The optical analysis shows the absorption decreases on doping and shifts slightly towards the longer wavelength region. The band gap energy (Eg) decreases (3.32–3.03 eV) with the increase of Sr dopant concentration. The photoluminescence (PL) spectrum reveals the UV emission is strong near the band-edge region (NBE) (392 nm) and intrinsic defects resulted in series of Vis emissions around 400–560 nm. Kinetic studies on RhB dye indicates the degradation rate has increased with dopant concentration. The improved photocatalytic activity is observed due to the efficient charge separation, improved visible light absorption, inhibition of the electron-hole pair's recombination and better adsorptive of RhB dye molecule on the surface of SZ-NPs. Moreover, the reduction in the total organic carbon (TOC) results reveals the improved photocatalytic activity of strontium doped ZnO NPs. - Highlights: • Effective synthesis of ZnO and Sr−ZnO nanoparticles by co-precipitation method. • Samples were characterized by XRD, SEM, EDS, UV–Vis and PL technique. • Higher optical absorption

Photoluminescence properties of TiO{sub 2} nanofibers

Energy Technology Data Exchange (ETDEWEB)

Chetibi, Loubna [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria); Busko, Tetiana; Kulish, Nikolay Polikarpovich [Kyiv National Taras Shevchenko University (Ukraine); Hamana, Djamel [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria); Chaieb, Sahraoui [Lawrence Berkeley National Laboratory (United States); Achour, Slimane, E-mail: achourslimane11@yahoo.fr [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria)

2017-04-15

Multi-walled carbon nanotube (MWCNT)-TiO{sub 2} nanofiber (NF) composites forming a layered nanostructure (MWCNTs/TiO{sub 2} NFs/Ti) were prepared by impregnation at low temperature. Room temperature photoluminescence (PL) of these nanostructures shows a broad intense band in the visible light range (∼450–600 nm). The origin of the PL emission which, mainly, resulted from surface oxygen vacancies and other defects was investigated. We studied the effect of MWCNT deposition on the PL of TiO{sub 2} NFs where the MWCNTs can act as an electron reservoir of electrons emitted from TiO{sub 2} nanofibers when irradiated with UV light. The combination of MWCNTs and TiO{sub 2} results in quenching of TiO{sub 2} luminescence in the visible range. In addition, the prepared surface of MWCNTs-TiO{sub 2} was irradiated with Ti{sup +} ions using irradiation energy of 140 keV and doses of 10{sup 13} ions/cm{sup 2}. Also, this treatment induced the PL intensity quenching due to the generation of non-radiative additional levels inside the band gap.

Graphitic carbon nitride/graphene oxide/reduced graphene oxide nanocomposites for photoluminescence and photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Aleksandrzak, Malgorzata, E-mail: malgorzata.aleksandrzak@o2.pl; Kukulka, Wojciech; Mijowska, Ewa

2017-03-15

Highlights: • Graphitic carbon nitride modified with graphene nanostructures. • Influence of graphene nanostructures size in photocatalytic properties of g-C{sub 3}N{sub 4}. • Improved photocatalysis resulted from up-converted photoluminescence. - Abstract: The study presents a modification of graphitic carbon nitride (g-C{sub 3}N{sub 4}) with graphene oxide (GO) and reduced graphene oxide (rGO) and investigation of photoluminescent and photocatalytic properties. The influence of GO and rGO lateral sizes used for the modification was investigated. The nanomaterials were characterized with atomic force microscopy (AFM), transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), diffuse reflectance UV–vis spectroscopy (DR-UV-vis) and photoluminescence spectroscopy (PL). PL revealed that pristine graphitic carbon nitride and its nanocomposites with GO and rGO emitted up-converted photoluminescence (UCPL) which could contribute to the improvement of photocatalytic activity of the materials. The photoactivity was evaluated in a process of phenol decomposition under visible light. A hybrid composed of rGO nanoparticles (rGONPs, 4–135 nm) exhibited the highest photoactivity compared to rGO with size of 150 nm–7.2 μm and graphene oxide with the corresponding sizes. The possible reason of the superior photocatalytic activity is the most enhanced UCPL of rGONPs, contributing to the emission of light with higher energy than the incident light, resulting in improved photogeneration of electron-hole pairs.

Photoluminescence effects of graphitic core size and surface functional groups in carbon dots: COO− induced red-shift emission

KAUST Repository

Hola, Katerina; Bourlinos, Athanasios B.; Kozak, Ondrej; Berka, Karel; Siskova, Karolina M.; Havrdova, Marketa; Tucek, Jiri; Safarova, Klara; Otyepka, Michal; Giannelis, Emmanuel P.; Zboril, Radek

2014-01-01

We present a simple molecular approach to control the lipophilic/ hydrophilic nature of photoluminescent carbon dots (CDs) based on pyrolysis of alkyl gallate precursors. Depending on the gallic acid derivative used, CDs with different alkyl groups (methyl, propyl, lauryl) on the surface can be obtained by isothermal heating at 270 C. This precursor-derived approach allows not only the control of lipophilicity but also the length of the particular alkyl chain enables the control over both the size and photoluminescence (PL) of the prepared CDs. Moreover, the alkyl chains on the CDs surface can be readily converted to carboxylate groups via a mild base hydrolysis to obtain water dispersible CDs with a record biocompatibility. The observed differences in PL properties of CDs and time-resolved PL data, including contributions from carbogenic cores and surface functional group, are rationalized and discussed in detail using time-dependent density functional theory (TD-DFT) calculations. © 2013 Elsevier Ltd. All rights reserved.

Photoluminescence effects of graphitic core size and surface functional groups in carbon dots: COO− induced red-shift emission

KAUST Repository

Hola, Katerina

2014-04-01

We present a simple molecular approach to control the lipophilic/ hydrophilic nature of photoluminescent carbon dots (CDs) based on pyrolysis of alkyl gallate precursors. Depending on the gallic acid derivative used, CDs with different alkyl groups (methyl, propyl, lauryl) on the surface can be obtained by isothermal heating at 270 C. This precursor-derived approach allows not only the control of lipophilicity but also the length of the particular alkyl chain enables the control over both the size and photoluminescence (PL) of the prepared CDs. Moreover, the alkyl chains on the CDs surface can be readily converted to carboxylate groups via a mild base hydrolysis to obtain water dispersible CDs with a record biocompatibility. The observed differences in PL properties of CDs and time-resolved PL data, including contributions from carbogenic cores and surface functional group, are rationalized and discussed in detail using time-dependent density functional theory (TD-DFT) calculations. © 2013 Elsevier Ltd. All rights reserved.

Detection of Human Ig G Using Photoluminescent Porous Silicon Interferometer.

Science.gov (United States)

Cho, Bomin; Kim, Seongwoong; Woo, Hee-Gweon; Kim, Sungsoo; Sohn, Honglae

2015-02-01

Photoluminescent porous silicon (PSi) interferometers having dual optical properties, both Fabry-Pérot fringe and photolumincence (PL), have been developed and used as biosensors for detection of Human Immunoglobin G (Ig G). PSi samples were prepared by electrochemical etching of p-type silicon under white light exposure. The surface of PSi was characterized using a cold field emission scanning electron microscope. The sensor system studied consisted of a single layer of porous silicon modified with Protein A. The system was probed with various fragments of aqueous human immunoglobin G (Ig G) analyte. Both reflectivity and PL were simultaneously measured under the exposure of human Ig G. An increase of optical thickness and decrease of PL were obtained under the exposure of human Ig G. Detection limit of 500 fM was observed for the human Ig G.

Defect-mediated photoluminescence up-conversion in cadmium sulfide nanobelts (Conference Presentation)

Science.gov (United States)

Morozov, Yurii; Kuno, Masaru K.

2017-02-01

The concept of optical cooling of solids has existed for nearly 90 years ever since Pringsheim proposed a way to cool solids through the annihilation of phonons via phonon-assisted photoluminescence (PL) up-conversion. In this process, energy is removed from the solid by the emission of photons with energies larger than those of incident photons. However, actually realizing optical cooling requires exacting parameters from the condensed phase medium such as near unity external quantum efficiencies as well as existence of a low background absorption. Until recently, laser cooling has only been successfully realized in rare earth doped solids. In semiconductors, optical cooling has very recently been demonstrated in cadmium sulfide (CdS) nanobelts as well as in hybrid lead halide perovskites. For the former, large internal quantum efficiencies, sub-wavelength thicknesses, which decrease light trapping, and low background absorption, all make near unity external quantum yields possible. Net cooling by as much as 40 K has therefore been possible with CdS nanobelts. In this study, we describe a detailed investigation of the nature of efficient anti-Stokes photoluminescence (ASPL) in CdS nanobelts. Temperature-dependent PL up-conversion and optical absorption studies on individual NBs together with frequency-dependent up-converted PL intensity spectroscopies suggest that ASPL in CdS nanobelts is defect-mediated through involvement of defect levels below the band gap.

Low temperature and decay lifetime photoluminescence of Eu and Tb nanoparticles embedded into SiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Bregolin, F.L. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves 9500, 91501-970 Porto Alegre-RS (Brazil); Franzen, P.; Boudinov, H. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves 9500, 91501-970 Porto Alegre-RS (Brazil); Sias, U.S. [Instituto Federal Sul-rio-grandense – Campus Pelotas, Praça 20 de Setembro 455, 96015-360 Pelotas-RS (Brazil); Behar, M. [Instituto de Física, Universidade Federal do Rio Grande do Sul, Av. Bento Gonçalves 9500, 91501-970 Porto Alegre-RS (Brazil)

2014-09-15

In the present work, we have studied the photoluminescence (PL) and decay lifetime of Tb and Eu nanoparticles (NPs) at low temperatures. The NPs were obtained by ion implantation into a SiO{sub 2} matrix. Concerning the PL emission of Tb NPs (from 370 to 700 nm), the shape does not change with the sample temperature and the PL yield has a maximum at 12 K and decreases with increasing temperature, reaching a minimum at 300 K. The PL lifetime is wavelength independent and remains almost constant at a value of 1.5 ms. Regarding Eu NPs emission, two spectral regions were identified, one with narrow emission bands (from 570 to 750 nm) and the other with a broad emission band (from 400 to 550 nm). Both PL regions show a minimum yield at 12 K, and next it rises with increasing temperatures, reaching the maximum at around 100 K. Then, the PL yields start to decrease, reaching at 300 K a value similar to the one obtained at 12 K. For the Eu NPs PL lifetime, two different results were obtained. The long wavelength spectral region shows a lifetime of the order of 1.0 ms independent of the temperature. Conversely, the short wavelength one is strongly temperature dependent, being of the order of several milliseconds for temperatures lower than 100 K down to 0.05 ms at 300 K. - Highlights: • Eu and Tb nanoparticles (NPs) were obtained by hot ion implantation into SiO{sub 2} films. • PL and PL decay of Tb and Eu NPs were investigated as a function of temperature. • The highest PL yield was achieved at 12 K for Tb NPs and for the Eu NPs at 100 K. • Tb NPs PL decay is temperature independent (∼1.5 ms) like Eu NPs in the 600–800 nm range (∼1 ms). • Eu NPs PL decay, in the 400–550 nm range, is some milliseconds at low temperatures and down to 100 µs at 300 K.

Microstructural and photoluminescence properties of sol–gel derived Tb3+ doped ZnO nanocrystals

CSIR Research Space (South Africa)

Kabongo, GL

2014-04-01

Full Text Available Un-doped and Tb(Sup3+) doped ZnO nanocrystals with different concentrations of Tb(Sup3+) were synthesized by a sol–gel method and their photoluminescence (PL) properties were investigated. The successful incorporation of Tb(sup3+) ions...

Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques

Energy Technology Data Exchange (ETDEWEB)

Koida, T. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); NICP, ERATO, Japan Science and Technology Agency (JST), Chiyoda 102-0071 (Japan); Uedono, A. [Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan); Tsukazaki, A. [Institute for Materials Research, Tohoku University, Sendai 980-8755 (Japan); Sota, T. [Department of Electrical, Engineering and Bioscience, Waseda University, Shinjuku 169-8555 (Japan); Kawasaki, M. [Institute for Materials Research, Tohoku University, Sendai 980-8755 (Japan); Combinatorial Materials Exploration and Technology (COMET), Tsukuba 305-0044 (Japan); Chichibu, S.F. [NICP, ERATO, Japan Science and Technology Agency (JST), Chiyoda 102-0071 (Japan); Photodynamics Research Center, RIKEN, Sendai 980-0868 (Japan)

2004-09-01

The roles of point defects and defect complexes governing nonradiative processes in ZnO epilayers were studied using time-resolved photoluminescence (PL) and slow positron annihilation measurements. The density or size of Zn vacancies (V{sub Zn}) decreased and the nonradiative PL lifetime ({tau}{sub nr}) increased with higher growth temperature for epilayers grown on a ScAlMgO{sub 4} substrate. Accordingly, the steady-state free excitonic PL intensity increased with increase in {tau}{sub nr} at room temperature. The use of a homoepitaxial substrate further decreased the V{sub Zn} concentration. However, no perfect relation between {tau}{sub nr} and the density or size of V{sub Zn} or other positron scattering centers was found. The results indicated that nonradiative recombination processes are governed not solely by single point defects, but by certain defect species introduced by the presence of V{sub Zn} such as vacancy complexes. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Mechanofluorochromic Carbon Nanodots: Controllable Pressure-Triggered Blue- and Red-Shifted Photoluminescence.

Science.gov (United States)

Liu, Cui; Xiao, Guanjun; Yang, Mengli; Zou, Bo; Zhang, Zhi-Ling; Pang, Dai-Wen

2018-02-12

Mechanofluorochromic materials, which change their photoluminescence (PL) colors in responding to mechanical stimuli, can be used as mechanosensors, security papers, and photoelectronic devices. However, traditional mechanofluorochromic materials can only be adjusted to a monotone direction upon the external stimuli. Controllable pressure-triggered blue- and red-shifted PL is reported for C-dots. The origin of mechanofluorochromism (MFC) in C-dots is interpreted based on structure-property relationships. The carbonyl group and the π-conjugated system play key roles in the PL change of C-dots under high pressure. As the pressure increases, the enhanced π-π stacking of the π-conjugated system causes the red-shift of PL, while the conversion of carbonyl groups eventually induces a blue-shift. Together with their low toxicity, good hydrophilicity, and small size, the tunable MFC property would boost various potential applications of C-dots. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structure and photoluminescence properties of carbon nanotip-vertical graphene nanohybrids

Energy Technology Data Exchange (ETDEWEB)

Wang, B. B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd., Lijiatuo, Banan District, Chongqing 400054 (China); Institute for Future Environments and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Zhu, K. [Division of Technical Support, Institute of Physics, Chinese Academy of Science, Beijing 10091 (China); Ostrikov, K., E-mail: kostya.ostrikov@qut.edu.au [Institute for Future Environments and School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Plasma Nanoscience Laboratories, Commonwealth Scientific and Industrial Research Organization, P. O. Box 218, Lindfield, New South Wales 2070 (Australia); Plasma Nanoscience, School of Physics, The University of Sydney, Sydney, New South Wales 2006 (Australia); Shao, R. W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

2016-01-14

We report on the effective enhancement and tuning of photoluminescence (PL) by combining vertical graphene nanoflakes (VGs) and carbon nanotips (CNTPs). The VGs are grown on the vertical CNTPs by hot filament chemical vapor deposition in the methane environment, where the CNTPs are synthesized on silicon substrates by CH{sub 4}-H{sub 2}-N{sub 2} plasma-enhanced hot filament chemical vapor deposition. The results of field emission scanning electron microscopy, transmission electron microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy indicate that the VGs can be grown on the CNTP and silicon substrate surfaces with the orientation perpendicular to the surfaces of CNTPs and silicon substrates. The PL properties of VG, CNTP, and CNTP-VG structures are studied using a 325 nm line of He-Cd laser as the excitation source. The PL results indicate that the PL of VGs is enhanced by the CNTPs due to the increasing density of PL emitters, while the PL properties of the nanohybrid system can be tuned. Furthermore, the potential applications of CNTP-VG structures in optoelectronic devices are analyzed. These results contribute to the design of functional graphene-based materials and the development of next-generation optoelectronic devices.

Extraordinary photoluminescence and strong temperature/angle-dependent Raman responses in few-layer phosphorene.

Science.gov (United States)

Zhang, Shuang; Yang, Jiong; Xu, Renjing; Wang, Fan; Li, Weifeng; Ghufran, Muhammad; Zhang, Yong-Wei; Yu, Zongfu; Zhang, Gang; Qin, Qinghua; Lu, Yuerui

2014-09-23

Phosphorene is a new family member of two-dimensional materials. We observed strong and highly layer-dependent photoluminescence in few-layer phosphorene (two to five layers). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us to use an optical method to quickly determine the crystalline orientation without tunneling electron microscopy or scanning tunneling microscopy. Our results provide much needed experimental information about the band structures and exciton nature in few-layer phosphorene.

Correlation between reflectance and photoluminescent properties of al-rich ZnO nano-structures

Science.gov (United States)

Khan, Firoz; Baek, Seong-Ho; Ahmad, Nafis; Lee, Gun Hee; Seo, Tae Hoon; Suh, Eun-kyung; Kim, Jae Hyun

2015-05-01

Al rich zinc oxide nano-structured films were synthesized using spin coating sol-gel technique. The films were annealed in oxygen ambient in the temperature range of 200-700 °C. The structural, optical, and photoluminescence (PL) properties of the films were studied at various annealing temperatures using X-ray diffraction spectroscopy, field emission scanning electron microscopy, photoluminescence emission spectra measurement, and Raman and UV-Vis spectroscopy. The optical band gap was found to decrease with the increase of the annealing temperature following the Gauss Amp function due to the confinement of the exciton. The PL peak intensity in the near band region (INBE) was found to increase with the increase of the annealing temperature up to 600 °C, then to decrease fast to a lower value for the annealing temperature of 700 °C due to crystalline quality. The Raman peak of E2 (low) was red shifted from 118 cm-1 to 126 cm-1 with the increase of the annealing temperature. The intensity of the second order phonon (TA+LO) at 674 cm-1 was found to decrease with the increase of the annealing temperature. The normalized values of the reflectance and the PL intensity in the NBE region were highest for the annealing temperature of 600 °C. A special correlation was found between the reflectance at λ = 1000 nm and the normalized PL intensity in the green region due to scattering due to presence of grains.

Shine red and yellow photoluminescence in GdAlO3−δ powders

International Nuclear Information System (INIS)

Dhahri, Kh.; Bejar, M.; Dhahri, E.; Soares, M.J.; Sousa, M.; Valente, M.A.

2015-01-01

Highlights: • GdAlO 3−δ (δ = 0.0, 0.1 and 0.2) powders were synthesized using the conventional solid-state method. • The PL study has revealed the apparition of intense red and yellow photoluminescence (PL) emissions at room temperature. • The red emission was directly related to the singly ionized oxygen vacancy V O · . • The green emission was directly related the doubly ionized oxygen vacancy V O ·· . • The presence of the singly ionized oxygen vacancy was confirmed from the EPR study. - Abstract: GdAlO 3−δ (δ = 0.0, 0.1 and 0.2) compounds were prepared by the conventional solid-state method. XRD patterns revealed that all samples present a major orthorhombic structure. An intense red and a yellow photoluminescence (PL) emissions were observed at room temperature for δ = 0.0 and δ ≠ 0.0 samples, respectively. The red emission was related to the singly ionized oxygen vacancies V O · . The production of doubly ionized oxygen vacancies V O ·· lead to the appearance of a yellow color observed directly from δ = 0.1 and 0.2 samples. The presence of singly and doubly ionized clusters was found to play an important role in the formation of hole–electron pairs and to give rise to the PL emission. The presence of singly ionized oxygen vacancies was confirmed by the EPR study

Stationary and time resolved PL spectroscopy for analysis of ultrafst photoreactions in MALDI and solar cell samples; Stationaere und zeitaufgeloeste Photolumineszenz-Spektroskopie zur Analyse ultraschneller Photoreaktionen in MALDI- und Solarzellenproben

Energy Technology Data Exchange (ETDEWEB)

Hoyer, Theo

2009-02-12

Stationary and time resolved measurements of photoluminescence (PL) were performed to analyse ultrafast photoreactions in solid MALDI (Matrix-Assisted Laser Desorption/Ionization) and solar cell samples. The investigation of pure cinnamic acid samples resulted in a first-time observation of a PL signature which is controlled by a photodimerisation on a ps- and fs-time scale. Other matrix compounds showed clear evidence of ultrafast photoinduced crystal reactions as well. In analyte/matrix mixtures consisting of angiotensin II and alpha-cyano-4-hydroxycinnamic acid or sinapinic acid, an additional effective PL quenching of matrix monomers was identified. This clearly indicates the existence of a further ultrafast photoreaction which strongly competes with the photodimerisation. The additional reaction is assumed to be a photoisomerisation of matrix monomers and to occur in the immediate vicinity of the analyte molecules. PL measurements on solar cell samples were performed with a P3HT/PCBM-mixture. The results show that within 150 fs about 50% of the P3HT-excitations relax via spontaneous charge transfer to PCBM molecules in this mixture.

Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying

International Nuclear Information System (INIS)

Joo, Jinmyoung; Defforge, Thomas; Gautier, Gael; Loni, Armando; Kim, Dokyoung; Sailor, Michael J.; Li, Z. Y.; Canham, Leigh T.

2016-01-01

The effect of supercritical drying (SCD) on the preparation of porous silicon (pSi) powders has been investigated in terms of photoluminescence (PL) efficiency. Since the pSi contains closely spaced and possibly interconnected Si nanocrystals ( 32% at room temperature) has been achieved, prompting the need for further detailed studies to establish the dominant causes of such an improvement.

Photoactivation and perturbation of photoluminescent properties of aqueous ZnS nanoparticles: Probing the surfactant-semiconductor interfaces

International Nuclear Information System (INIS)

Mehta, S.K.; Kumar, Sanjay

2011-01-01

Graphical abstract: The variation in PL emission intensity of growing ZnS NPs during first hour of their growth depends upon the nature of surfactants used for their stabilization. Highlights: ► Photoluminescence (PL) intensity of growing ZnS NPs increases linearly with time. ► Significant PL enhancement in anionic surfactant stabilized ZnS NPs on irradiation. ► PL decay with delay time after removing from UV-irradiation in all the surfactants. ► Better PL stability of ZnS NPs stabilized in anionic surfactants than cationic ones. - Abstract: The in situ photochemistry of aqueous colloidal ZnS has been studied in relation to variety of the surfactants as surface passivating agents. The photoluminescence (PL) intensity of ZnS nanoparticles (NPs) has been drastically enhanced as compared to their bare counterparts due to surface passivation by surfactants depending upon their molecular structure. Cationic surfactants of alkyltrimethylammonium bromide series with different chain lengths (C 16 , C 14 and C 12 ) have been tested. The PL emission of ZnS NPs decreases with decrease in chain length because of ineffective stabilization and passivation of surface because the larger sized NPs were produced in the surfactant with smaller chain length. On the other hand, three anionic surfactants with C 12 chain length with different head groups have been capable of comparatively effective passivation to produce stable NPs with better luminescence. The changing nature of surface states during growth and long time ripening of ZnS NPs has also been monitored by comparing time evolution PL emission in different surfactants. The influence of UV-light irradiation in enhancing the PL emission has been found to be surfactant structure dependent with maximum enhancement observed with the surfactants having π-electrons in their head group functionalities. The anionic surfactants also display better tendency to retain the enhanced PL of ZnS NPs for longer time durations.

Surface modification effects on defect-related photoluminescence in colloidal CdS quantum dots.

Science.gov (United States)

Lee, TaeGi; Shimura, Kunio; Kim, DaeGwi

2018-05-03

We investigated the effects of surface modification on the defect-related photoluminescence (PL) band in colloidal CdS quantum dots (QDs). A size-selective photoetching process and a surface modification technique with a Cd(OH)2 layer enabled the preparation of size-controlled CdS QDs with high PL efficiency. The Stokes shift of the defect-related PL band before and after the surface modification was ∼1.0 eV and ∼0.63 eV, respectively. This difference in the Stokes shifts suggests that the origin of the defect-related PL band was changed by the surface modification. Analysis by X-ray photoelectron spectroscopy revealed that the surface of the CdS QDs before and after the surface modification was S rich and Cd rich, respectively. These results suggest that Cd-vacancy acceptors and S-vacancy donors affect PL processes in CdS QDs before and after the surface modification, respectively.

One-step microwave synthesis of photoluminescent carbon nanoparticles from sodium dextran sulfate water solution

Science.gov (United States)

Kokorina, Alina A.; Goryacheva, Irina Y.; Sapelkin, Andrei V.; Sukhorukov, Gleb B.

2018-04-01

Photoluminescent (PL) carbon nanoparticles (CNPs) have been synthesized by one-step microwave irradiation from water solution of sodium dextran sulfate (DSS) as the sole carbon source. Microwave (MW) method is very simple and cheap and it provides fast synthesis of CNPs. We have varied synthesis time for obtaining high luminescent CNPs. The synthesized CNPs exhibit excitation-dependent photoluminescent. Final CNPs water solution has a blue- green luminescence. CNPs have low cytotoxicity, good photostability and can be potentially suitable candidates for bioimaging, analysis or analytical tests.

Plasmon-Enhanced Photoluminescence of an Amorphous Silicon Quantum Dot Light-Emitting Device by Localized Surface Plasmon Polaritons in Ag/SiOx:a-Si QDs/Ag Sandwich Nanostructures

Directory of Open Access Journals (Sweden)

Tsung-Han Tsai

2015-01-01

Full Text Available We investigated experimentally the plasmon-enhanced photoluminescence of the amorphous silicon quantum dots (a-Si QDs light-emitting devices (LEDs with the Ag/SiOx:a-Si QDs/Ag sandwich nanostructures, through the coupling between the a-Si QDs and localized surface plasmons polaritons (LSPPs mode, by tuning a one-dimensional (1D Ag grating on the top. The coupling of surface plasmons at the top and bottom Ag/SiOx:a-Si QDs interfaces resulted in the localized surface plasmon polaritons (LSPPs confined underneath the Ag lines, which exhibit the Fabry-Pérot resonance. From the Raman spectrum, it proves the existence of a-Si QDs embedded in Si-rich SiOx film (SiOx:a-Si QDs at a low annealing temperature (300°C to prevent the possible diffusion of Ag atoms from Ag film. The photoluminescence (PL spectra of a-Si QDs can be precisely tuned by a 1D Ag grating with different pitches and Ag line widths were investigated. An optimized Ag grating structure, with 500 nm pitch and 125 nm Ag line width, was found to achieve up to 4.8-fold PL enhancement at 526 nm and 2.46-fold PL integrated intensity compared to the a-Si QDs LEDs without Ag grating structure, due to the strong a-Si QDs-LSPPs coupling.

Photoluminescence from ZnO-SiO2 opals with different sphere diameters and thicknesses

International Nuclear Information System (INIS)

Yang Yingling; Yan Hongwei; Fu Zhengping; Yang Beifang; Xia Linsheng; Wang Zhen; Zuo Jian; Yu Shijun; Fu Shengquan; Li Fanqing

2007-01-01

We systematically investigated the photoluminescence (PL) and transmittance characteristics of ZnO-SiO 2 opals with varied positions of the stop-band and film thicknesses. An improved ultraviolet (UV) luminescence was observed from ZnO-SiO 2 composites over pure ZnO nanocrystals under 325 nm He-Cd laser excitation at room temperature. The UV PL of ZnO nanocrystals in SiO 2 opals with stop-bands center of 410 nm is sensitive to the thickness of opal films, and the UV PL intensity increases with the film thickness increasing. The PL spectra of ZnO nanocrystals in SiO 2 opals with stop-bands center of 570 nm show a suppression of the weak visible band. The experimental results are discussed based on the scattering and/or absorbance in opal crystals

Chemically modulated graphene quantum dot for tuning the photoluminescence as novel sensory probe

Science.gov (United States)

Hwang, Eunhee; Hwang, Hee Min; Shin, Yonghun; Yoon, Yeoheung; Lee, Hanleem; Yang, Junghee; Bak, Sora; Lee, Hyoyoung

2016-12-01

A band gap tuning of environmental-friendly graphene quantum dot (GQD) becomes a keen interest for novel applications such as photoluminescence (PL) sensor. Here, for tuning the band gap of GQD, a hexafluorohydroxypropanyl benzene (HFHPB) group acted as a receptor of a chemical warfare agent was chemically attached on the GQD via the diazonium coupling reaction of HFHPB diazonium salt, providing new HFHPB-GQD material. With a help of the electron withdrawing HFHPB group, the energy band gap of the HFHPB-GQD was widened and its PL decay life time decreased. As designed, after addition of dimethyl methyl phosphonate (DMMP), the PL intensity of HFHPB-GQD sensor sharply increased up to approximately 200% through a hydrogen bond with DMMP. The fast response and short recovery time was proven by quartz crystal microbalance (QCM) analysis. This HFHPB-GQD sensor shows highly sensitive to DMMP in comparison with GQD sensor without HFHPB and graphene. In addition, the HFHPB-GQD sensor showed high selectivity only to the phosphonate functional group among many other analytes and also stable enough for real device applications. Thus, the tuning of the band gap of the photoluminescent GQDs may open up new promising strategies for the molecular detection of target substrates.

Structure and photoluminescence of films composed of carbon nanoflakes

Energy Technology Data Exchange (ETDEWEB)

Wang, Yi, E-mail: wangyi@cqut.edu.cn [College of Mechanical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054, P R China (China); Li, Lin [College of Chemistry, Chongqing Normal University, Chongqing 401331, P R China (China); Cheng, Qijin [School of Energy Research, Xiamen University, Xiamen 361005, P R China (China); He, Chunlin [Liaoning Provincial Key Laboratory of Advanced Materials, Shenyang University, Shenyang 110044, P R China (China)

2015-05-15

Carbon nanoflake films (CNFFs) were directly synthesized by plasma-enhanced hot filament chemical vapor deposition. The results of field emission scanning electron microscope, transmission electron microscope, micro-Raman spectroscope, X-ray photoelectron spectroscope and Fourier transform infrared spectroscope indicate that the CNFFs are composed of bending carbon nanoflakes with the hydrocarbon and hydroxyl functional groups, and the carbon nanoflakes become thin in a long deposition time. The structural change of carbon nanoflakes is related to the formation of structural units and the aggregation of hydrocarbon radicals near the carbon nanoflakes. Moreover, the photoluminescence (PL) properties of CNFFs were studied in a Ramalog system and a PL spectroscope. The PL results indicate that the PL intensity of CNFFs is lowered with the increase of thickness of CNFFs. The lowering of PL intensity for the thick CNFFs originates from the effect of more dangling bonds in the CNFFs. In addition, we studied the structural difference of carbon nanoflakes grown by different CVD systems and the PL difference of carbon nanoflakes in different measurement systems. The results achieved here are important to control the growth and structure of graphene-based materials and fabricate the optoelectronic devices related to carbon-based materials. - Highlights: • Carbon nanoflake films (CNFFs) were synthesized by PEHFCVD. • The structure of CNFFs is related to the aggregation of carbon hydrocarbon radicals. • The PL intensity of CNFFs is lowered with the thickness increase of CNFFs. • The change of PL intensity of CNFFs is due to the dangling bonds in CNFFs. • The widening of PL bands of CNFFs results from the diversity of carbon nanofalkes.

From photoluminescence to thermal emission: Thermally-enhanced PL (TEPL) for efficient PV (Conference Presentation)

Science.gov (United States)

Manor, Assaf; Kruger, Nimrod; Martin, Leopoldo L.; Rotschild, Carmel

2016-09-01

The Shockley-Queisser efficiency limit of 40% for single-junction photovoltaic (PV) cells is mainly caused by the heat dissipation accompanying the process of electro-chemical potential generation. Concepts such as solar thermo-photovoltaics (STPV) aim to harvest this heat loss by the use of a primary absorber which acts as a mediator between the sun and the PV, spectrally shaping the light impinging on the cell. However, this approach is challenging to realize due to the high operating temperatures of above 2000K required in order to generate high thermal emission fluxes. After over thirty years of STPV research, the record conversion efficiency for STPV device stands at 3.2% for 1285K operating temperature. In contrast, we recently demonstrated how thermally-enhanced photoluminescence (TEPL) is an optical heat-pump, in which photoluminescence is thermally blue-shifted upon heating while the number of emitted photons is conserved. This process generates energetic photon-rates which are comparable to thermal emission in significantly reduced temperatures, opening the way for a TEPL based energy converter. In such a device, a photoluminescent low bandgap absorber replaces the STPV thermal absorber. The thermalization heat induces a temperature rise and a blue-shifted emission, which is efficiently harvested by a higher bandgap PV. We show that such an approach can yield ideal efficiencies of 70% at 1140K, and realistic efficiencies of almost 50% at moderate concentration levels. As an experimental proof-of-concept, we demonstrate 1.4% efficient TEPL energy conversion of an Nd3+ system coupled to a GaAs cell, at 600K.

Unusual near-band-edge photoluminescence at room temperature in heavily-doped ZnO:Al thin films prepared by pulsed laser deposition

International Nuclear Information System (INIS)

Mohanty, Bhaskar Chandra; Yeon, Deuk Ho; Das, Sachindra Nath; Kwak, Ji Hye; Yoon, Kyung Hoon; Cho, Yong Soo

2013-01-01

Room temperature photoluminescence (PL) properties of heavily-doped ZnO:Al thin films (with carrier concentration n in the range of 5–20 × 10 20 cm −3 ) prepared by pulsed laser deposition have been investigated. Despite their high carrier concentration, the films exhibited strong room temperature near-band-edge bound excitons at ∼3.34 eV and an unusual peak at ∼3.16 eV, and negligible deep-level emission even for the films deposited at a temperature as low as 25 °C. The radiative efficiency of the films increased with growth temperature as a result of increased n and improved crystallinity. A large blue shift of optical band gap was observed, which is consistent with the n-dependent Burstein–Moss and band gap-renormalization effects. Comparison of the results of the PL and optical measurements revealed a large Stokes shift that increased with increase in n. It has been explained by a model based on local potential fluctuations caused by randomly-distributed doping impurities. - Highlights: • Studied PL properties of heavily-doped ZnO:Al films grown by PLD. • Unusual strong near-band-edge emissions and negligible deep-level emission at RT. • Increased optical band gap with growth temperature and thus carrier concentration. • Stokes shift and PL peak width increased with carrier concentration. • Results explained by a model based on local potential fluctuations

Complementary roles of benzylpiperazine and iodine 'vapor' in the strong enhancement of orange photoluminescence from CuI(1 1 1) thin film.

Science.gov (United States)

Rawal, Takat B; Turkowski, Volodymyr; Rahman, Talat S

2014-05-07

We have employed density functional theory, corrected by the on-site electron-electron repulsion energy U, to clarify the mechanism behind the enhanced orange photoluminescence (PL) of a CuI(1 1 1) thin film conjugated with a benzylpiperazine (BZP) molecule in the presence of an iodine 'vapor' atom. Our results demonstrated that the adsorbed molecule and the 'vapor' atom play complementary roles in producing the PL. The latter, in attaching to the film surface, creates a hole-trapping surface state located ~0.25 eV above the valence band-edge of the film, in good agreement with ~0.2 eV reported in experiments. Upon photo-excitation of the BZP/CuI(1 1 1) system in the presence of surface iodine 'vapor' atoms, excited electrons are transferred into the conduction band of CuI, and holes are trapped by the 'vapor' atoms. These holes, in turn, quickly relax into the HOMO state of the BZP molecule, owing to the fact that the molecule adsorbs on the film surface in the immediate vicinity of a 'vapor' atom. Relaxed holes subsequently recombine with excited electrons in the conduction band of the CuI film, thereby producing a luminescence peak at ~2.1 eV, in qualitative agreement with experimental findings.

Novel photoluminescence enzyme immunoassay based on supramolecular host-guest recognition using L-arginine/6-aza-2-thiothymine-stabilized gold nanocluster.

Science.gov (United States)

Wang, Youmei; Lu, Minghua; Tang, Dianping

2018-06-30

A new photoluminescence (PL) enzyme immunoassay was designed for sensitive detection of aflatoxin B 1 (AFB 1 ) via an innovative enzyme substrate, 6-aza-2-thiothymine-stabilized gold nanocluster (AAT-AuNC) with L-arginine. The enzyme substrate with strong PL intensity was formed through supramolecular host-guest assembly between guanidine group of L-arginine and AAT capped on the surface of AuNC. Upon arginase introduction, the captured L-arginine was hydrolyzed into ornithine and urea, thus resulting in the decreasing PL intensity. Based on this principle, a novel competitive-type immunoreaction was first carried out on AFB 1 -bovine serum albumin (AFB 1 -BSA) conjugate-coated microplate, using arginase-labeled anti-AFB 1 antibody as the competitor. Under the optimum conditions, the PL intensity increased with the increment of target AFB 1 , and allowed the detection of the analyte at concentrations as low as 3.2 pg mL -1 (ppt). Moreover, L-arginine-AAT-AuNC-based PL enzyme immunoassay afforded good reproducibility and acceptable specificity. In addition, the accuracy of this methodology, referring to commercial AFB 1 ELISA kit, was evaluated to analyze naturally contaminated or spiked peanut samples, giving well-matched results between two methods, thus representing a useful scheme for practical application in quantitative monitoring of mycotoxins in foodstuff. Copyright © 2018 Elsevier B.V. All rights reserved.

Studies on Characterization, Optical Absorption, and Photoluminescence of Yttrium Doped ZnS Nanoparticles

Directory of Open Access Journals (Sweden)

Ranganaik Viswanath

2014-01-01

Full Text Available Pure ZnS and ZnS:Y nanoparticles were synthesized by a chemical coprecipitation route using EDTA-ethylenediamine as a stabilizing agent. X-ray diffraction (XRD, high resolution transmission electron microscopy (HRTEM, field emission scanning electron microscopy (FE-SEM, Fourier transform infrared spectrometry (FTIR, thermogravimetric-differential scanning calorimetry (TG-DSC, and UV-visible and photoluminescence (PL spectroscopy were employed to characterize the as-synthesized ZnS and ZnS:Y nanoparticles, respectively. XRD and TEM studies show the formation of cubic ZnS:Y particles with an average size of ~4.5 nm. The doping did not alter the phase of the zinc sulphide, as a result the sample showed cubic zincblende structure. The UV-visible spectra of ZnS and ZnS:Y nanoparticles showed a band gap energy value, 3.85 eV and 3.73 eV, which corresponds to a semiconductor material. A luminescence characteristics such as strong and stable visible-light emissions in the orange region alone with the blue emission peaks were observed for doped ZnS nanoparticles at room temperature. The PL intensity of orange emission peak was found to be increased with an increase in yttrium ions concentration by suppressing blue emission peaks. These results strongly propose that yttrium doped zinc sulphide nanoparticles form a new class of luminescent material.

Temperature dependence of photoluminescence from submonolayer deposited InGaAs/GaAs quantum dots

DEFF Research Database (Denmark)

Xu, Zhangcheng; Leosson, K.; Birkedal, Dan

2002-01-01

The temperature dependence of photoluminescence (PL) from self-assembled InGaAs quantum dots (QD's) grown by submonolayer deposition mode (non-SK mode), is investigated. It is found that the PL spectra are dominated by the ground-state transitions at low temperatures, but increasingly...... by the excited-state transitions at higher temperatures. The emission linewidth of the ground-state transitions of QDs ensembles first decreases and then increases with the increase of temperature, which results from the carrier transfer between dots via barrier states....

Low temperature synthesis of Zn{sub 2}GeO{sub 4} nanorods and their photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Tsai, Meng-Yen [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan (China); Huang, Sheng-Hsin [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Perng, Tsong-Pyng, E-mail: tpperng@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Department of Chemical Engineering and Materials Science, Yuan Ze University, Chungli 320, Taiwan (China)

2013-04-15

Zn{sub 2}GeO{sub 4} nanorods were synthesized using a simple reflux method. The product with 0.05 M Zn{sub 2}GeO{sub 4} is an aggregation of short nanorods with the diameter ranging from 30 to 50 nm. If the Zn{sub 2}GeO{sub 4} molarity was increased, the nanorods became longer and aggregated as bundles. An intense white-bluish photoluminescence (PL) was observed from these nanorods, and the PL band can be dissolved into four Gaussian peaks that are associated with the native defects. Since the PL intensity of the nanorods is comparable to that of sintered particles, this reflux method provides a time- and energy-efficient route to prepare Zn{sub 2}GeO{sub 4} phosphor. -- Highlights: ► Zn{sub 2}GeO{sub 4} nanorods were prepared by a simple refluxing method at low temperature without any surfactants. ► The morphologies and crystal structures of Zn{sub 2}GeO{sub 4} growth were studied from beginning to the end (0 min to 3 h). ► The photoluminescence of Zn{sub 2}GeO{sub 4} synthesized by different methods was studied.

Simultaneous synthesis and densification of transparent, photoluminescent polycrystalline YAG by current activated pressure assisted densification (CAPAD)

International Nuclear Information System (INIS)

Penilla, E.H.; Kodera, Y.; Garay, J.E.

2012-01-01

Highlights: ► We report a method for the synthesis of transparent and PL bulk polycrystalline Ce:YAG using CAPAD. ► The process uses γ-Al 2 O 3 , Y 2 O 3 , and CeO 2 nanopowders, reacted and densified simultaneously. ► The synthesis/densification kinetics are faster than those reported previously. ► Optical measurements show good transparency in the visible and photoluminescence (PL) in the Ce:YAG. ► The PL peak is broad and appears white when excited using blue light. - Abstract: We report a method for the synthesis and processing of transparent bulk polycrystalline yttrium aluminum garnet (YAG) and photoluminescent Ce-doped YAG ceramics via solid-state reactive-current activated pressure assisted densification (CAPAD). The process uses commercially available γ-Al 2 O 3 , Y 2 O 3 , and CeO 2 nanopowders. The nanopowders were reacted and densified simultaneously at temperatures between 850 °C and 1550 °C and at a maximum pressure of 105 MPa. The solid-state reaction to phase pure YAG occurs in under 4 min at processing temperatures 1100 °C which is significantly faster (on the order of tens of hours) and occurs at much lower temperatures (∼600 °C) compared to conventional reaction sintering. We found that the reaction significantly improves densification – the shrinkage rate of reaction-produced YAG was three times higher than that of YAG using pre-reacted powder. The Ce additions were found to retard the reaction driven shrinkage kinetics by a factor ∼3, but are still faster (by a factor ∼1.6) than those associated with direct densification (no synthesis). Densities >99% were achieved in both pure YAG and Ce doped YAG (Ce:YAG). Results of optical measurements show good transparency in the visible and photoluminescence (PL) in the Ce:YAG. The PL peak is broad and appears white when excited using blue light confirming that the ceramics can be used in solid state lighting to produce white light.

Photoluminescence of Sequential Infiltration Synthesized ZnO nanostructures

Science.gov (United States)

Ocola, Leonidas; Gosztola, David; Yanguas-Gil, Angel; Connolly, Aine

We have investigated a variation of atomic layer deposition (ALD), called sequential infiltration synthesis (SiS), as an alternate method to incorporate ZnO and other oxides inside polymethylmethacrylate (PMMA) and other polymers. Energy dispersive spectroscopy (EDS) results show that we synthesize ZnO up to 300 nm inside a PMMA film. Photoluminescence data on a PMMA film shows that we achieve a factor of 400X increase in photoluminescence (PL) intensity when comparing a blank Si sample and a 270 nm thick PMMA film, where both were treated with the same 12 alternating cycles of H2O and diethyl zinc (DEZ). PMMA is a well-known ebeam resist. We can expose and develop patterns useful for photonics or sensing applications first, and then convert them afterwards into a hybrid polymer-oxide material. We show that patterning does indeed affect the photoluminescence signature of native ZnO. We demonstrate we can track the growth of the ZnO inside the PMMA polymer using both photoluminescence and Raman spectroscopy and determine the point in the process where ZnO is first photoluminescent and also at which point ZnO first exhibits long range order in the polymer. This work was supported by the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

On the origin of excimer emission in electroluminescence and photoluminescence spectra of polyfluorenes

International Nuclear Information System (INIS)

Vacha, Martin; Ha, Jaekook; Sato, Hisaya

2007-01-01

We report a study on the differences in red-shifted excimer band in photoluminescence (PL) and electroluminescence (EL) spectra of thin films of a copolymer of dibutylfluorene and butylphenylphenoxazine. The relative intensity of the excimer band in PL spectra increases with temperature above the polymer glass transition, and with the intensity of the excitation light. In EL spectra, on the other hand, the relative excimer intensity is seen to decrease with increasing driving voltage. These opposite trends originate from the different nature of excitations in PL and EL spectra: photoexcitation directly creates singlet excitons while electric excitation proceeds via interaction of injected electrons and holes. In case of electric excitation, the observed results might be due to trap-assisted excimer formation

Structure and photoluminescence of Mn-passivated nanocrystalline ZnO:S thin films

International Nuclear Information System (INIS)

Tong, Y.H.; Tang, Q.X.; Liu, Y.C.; Shao, C.L.; Xu, C.S.; Liu, Y.X.

2005-01-01

Mn-passivated nanocrystalline ZnO:S thin films were fabricated by thermally oxidizing Mn-doped ZnS (ZnS:Mn) films prepared by electron beam evaporation. Mn was introduced to passivate the surface defects of ZnO and to improve the optical properties. X-ray diffraction (XRD) and photoluminescence (PL) spectra at 81.9 K indicated the S content in ZnO thin film gradually decreased with increasing annealing temperature. The fitted result of the temperature-dependent PL spectra in the range from 81.9 to 302.2 K showed that S dopant could broaden the optical band gap energy of ZnO. Room temperature PL spectra confirmed that the ultraviolet peak shifted to lower energy with the decrease of S content in the thin film because of the Burstein-Moss effect

Photoluminescence investigation of thick GaN films grown on Si substrates by hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Yang, M.; Ahn, H. S.; Chang, J. H.; Yi, S. N.; Kim, K. H.; Kim, H.; Kim, S. W.

2003-01-01

The optical properties of thick GaN films grown by hydried vapor phase epitaxy (HVPE) using a low-temperature intermediate GaN buffer layer grown on a (111) Si substrate with a ZnO thin film were investigated by using photoluminescence (PL) measurement at 300 K and 77 K. The strong donor bound exciton (DBE) at 357 nm with a full width at half maximum (FWHM) of 15 meV was observed at 77 K. The value of 15 meV is extremely narrow for GaN grown on Si substrate by HVPE. An impurity-related peak was also observed at 367 nm. The origin of impurity was investigated using Auger spectroscopy.

Metal deposition on porous silicon by immersion plating to improve photoluminescence properties

Energy Technology Data Exchange (ETDEWEB)

Haddadi, Ikbel, E-mail: haded.ikbel@yahoo.fr; Amor, Sana Ben; Bousbih, Rabaa; Whibi, Seif El; Bardaoui, Afrah; Dimassi, Wissem; Ezzaouia, Hatem

2016-05-15

Metal deposition into porous silicon (PS) by immersion plating in aqueous solution during different times was investigated. The influence of immersion time on optical properties of porous silicon treated with Lithium (Li) was studied by photoluminescence (PL). From experimental results, we suggest that the treatment, for critical immersion time provides an easy way to achieve an improvement in the PL intensity. To identify surface modification, Fourier transmission infrared spectroscopy and atomic force microscopy were performed. The reflectivity spectra showed that the variation of light absorption can be probably due to the newly formed layer during the chemical deposition of Li. - Highlights: • We have varied the immersion time of PS in LiBr solution. • PL intensity shows significant variation as function of immersion time. • We observe reduction of Si–O–Li bands with increasing treatment time. • Concurrent with the loss of Li we observe a decrease of the PL.

Metal deposition on porous silicon by immersion plating to improve photoluminescence properties

International Nuclear Information System (INIS)

Haddadi, Ikbel; Amor, Sana Ben; Bousbih, Rabaa; Whibi, Seif El; Bardaoui, Afrah; Dimassi, Wissem; Ezzaouia, Hatem

2016-01-01

Metal deposition into porous silicon (PS) by immersion plating in aqueous solution during different times was investigated. The influence of immersion time on optical properties of porous silicon treated with Lithium (Li) was studied by photoluminescence (PL). From experimental results, we suggest that the treatment, for critical immersion time provides an easy way to achieve an improvement in the PL intensity. To identify surface modification, Fourier transmission infrared spectroscopy and atomic force microscopy were performed. The reflectivity spectra showed that the variation of light absorption can be probably due to the newly formed layer during the chemical deposition of Li. - Highlights: • We have varied the immersion time of PS in LiBr solution. • PL intensity shows significant variation as function of immersion time. • We observe reduction of Si–O–Li bands with increasing treatment time. • Concurrent with the loss of Li we observe a decrease of the PL.

Highly stable colloidal TiO2 nanocrystals with strong violet-blue emission

International Nuclear Information System (INIS)

Ghamsari, Morteza Sasani; Gaeeni, Mohammad Reza; Han, Wooje; Park, Hyung-Ho

2016-01-01

Improved sol–gel method has been applied to prepare highly stable colloidal TiO 2 nanocrystals. The synthesized titania nanocrystals exhibit strong emission in the violet-blue wavelength region. Very long evolution time was obtained by preventing the sol to gel conversion with reflux process. FTIR, XRD, UV–vis absorption, photoluminescence and high resolution transmission electron microscope (HRTEM) were used to study the optical properties, crystalline phase, morphology, shape and size of prepared TiO 2 colloidal nanocrystals. HRTEM showed that the diameter of TiO 2 colloidal nanocrystals is about 5 nm. Although the PL spectra show similar spectral features upon excitation wavelengths at 280, 300 and 350 nm, but their emission intensities are significantly different from each other. Photoluminescence quantum yield for TiO 2 colloidal nanocrystals is estimated to be 49% with 280 nm excitation wavelength which is in agreement and better than reported before. Obtained results confirm that the prepared colloidal TiO 2 sample has enough potential for optoelectronics applications.

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

International Nuclear Information System (INIS)

Shu, G W; Wang, C K; Wang, J S; Shen, J L; Hsiao, R S; Chou, W C; Chen, J F; Lin, T Y; Ko, C H; Lai, C M

2006-01-01

The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

Photoluminescence of sol–gel synthesized PZT powders

Energy Technology Data Exchange (ETDEWEB)

Rodríguez-Aranda, M.C. [Coordinación para la Innovación y Aplicación de la Ciencia y la Tecnología-Universidad Autónoma de San Luis Potosí, Av. Sierra Leona No.550,Col. Lomas 2a. sección, C.P. 78210 San Luis Potosí, SLP, México (Mexico); Calderón-Piñar, F. [Centro de Investigación y de Estudios Avanzados del I.P.N. Unidad Querétaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, C.P. 7623 Querétaro, Qro, México (Mexico); Facultad de Física/IMRE, San Lázaro y L, Universidad de la Habana, C.P. 10400 Habana (Cuba); Hernández-Landaverde, M.A. [Centro de Investigación y de Estudios Avanzados del I.P.N. Unidad Querétaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, C.P. 7623 Querétaro, Qro, México (Mexico); and others

2016-11-15

A wide band of photoluminescence (PL) emission in structurally disordered lead zirconate titanate (PZT) powders, prepared by sol–gel route, was observed at room temperature excited with a laser line (488 nm). Powders with PbZr{sub 0.53}Ti{sub 0.47}O{sub 3} nominal composition annealed at different temperatures were studied by X-ray diffraction, Raman spectroscopy, Luminescence, Diffuse Reflectance and Electronic Paramagnetic Resonance Spectroscopy (EPR). Our results indicate that the PL response can be associated to order–disorder degree in the perovskite structure, with the exception of samples annealed at low temperature, where a mixture of oxides precursorsГ—Ві phases was observed. Furthermore, in quasi-crystalline ordered samples (95% of crystallinity) a small generation of PL remains. In these experiments, the band gap increases with the formation of crystalline structure. EPR experiments were conducted in order to follow the evolution of paramagnetic species with thermal treatment from the mixture of oxides precursors to the perovskite phase and paramagnetic point defects were identified (Pb{sup +3} and Ti{sup +3}). EPR data suggest the presence of order–disorder within the lattice network. Paramagnetic species are similar in samples treated at 700 and 800 °C, nevertheless the emission intensity decreases by a factor of 6, indicating that the defects associated with PL are not paramagnetic at both temperatures.

Facile one-step synthesis and photoluminescence properties of Ag–ZnO core–shell structure

International Nuclear Information System (INIS)

Zhai, HongJu; Wang, LiJing; Han, DongLai; Wang, Huan; Wang, Jian; Liu, XiaoYan; Lin, Xue; Li, XiuYan; Gao, Ming; Yang, JingHai

2014-01-01

Graphical abstract: The PL of the Ag–ZnO core-shell nanostructure showed obvious increase of UV emission and slight decrease of visible light emission compared to that of the pure ZnO. With the calcination temperature increasing from 300 to 600 °C, the primary peak located at 380 nm became stronger and sharper, indicating that the increasing calcination temperature made the samples crystallize better. - Highlights: • Ag-ZnO core-shell structure was obtained via a simple one-step solvothermal process. • The approach was simple, mild, low cost, reproducible and easy-to-handle. • The obvious enhancement of UV luminescent has been observed. • Effects of the calcining temperature to luminescence were investigated in detail. - Abstract: Ag–ZnO core–shell structures were gained via one-step solvothermal process. The products were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, photoluminescence (PL) and UV–vis spectroscopy, respectively. It was shown that the properties were greatly changed compared to pure ZnO from the PL and Raman spectra, which indicated the strong interfacial interaction between ZnO and Ag. The work provides a feasible method to synthesize Ag–ZnO core–shell structure photocatalyst, which is promising in the further practical application of ZnO-based photocatalytic materials

Pool-Frenkel thermoelectric modulation of exciton photoluminescence in GaSe crystals

International Nuclear Information System (INIS)

Ertap, H.; Mamedov, G.M.; Karabulut, M.; Bacioglu, A.

2011-01-01

Effect of external field on the exciton photoluminescence of GaSe crystals has been investigated and it has been observed that the PL is quenched with the applied field. The changes observed in the PL spectra have been analyzed with impact exciton, Franz-Keldysh and Pool-Frenkel effects. From the analyses of the experimental data, it has been found that the intensity of direct free, indirect free and bound exciton peaks decreased exponentially with the square root of applied field as I∼exp-β√E. The energy positions of emission peaks were found to shift to longer wavelength with the applied field as ΔE∼β√E. From these findings, the Pool-Frenkel thermoelectric field effect is seen to be the dominant mechanism in the variation of exciton PL with the applied field even though the impact exciton and Franz-Keldysh effects contribute. - Highlights: → Exciton PL intensity varies with the applied field. It decreases with the square root of E in accordance with Pool-Frenkel effect. → In the intrinsic region of PL spectrum, lines belonging to direct and indirect free/bound excitons were observed. → Line positions shifted to longer wavelengths with the applied field. → It was shown that amplitude modulation of exciton PL with electric field was possible.

Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki

2002-01-01

We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively

Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)

International Nuclear Information System (INIS)

Saxena, Shailendra K.; Rai, Hari. M.; Late, Ravikiran; Sagdeo, Pankaj R.; Kumar, Rajesh

2015-01-01

In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence

Photoluminescence and cathodoluminescence of Mn doped zinc silicate nanophosphors for green and yellow field emissions displays

Science.gov (United States)

Omri, K.; Alyamani, A.; Mir, L. El

2018-02-01

Mn2+-doped Zn2SiO4 (ZSM2+) was synthesized by a facile sol-gel technique. The obtained samples were characterized by X-ray diffraction (XRD), Raman spectroscopy, photoluminescence (PL) and cathodoluminescence (CL) techniques. Under UV excitation, spectra showed that the α-ZSM2+ phosphor exhibited a strong green emission around 525 nm and reached the highest luminescence intensity with the Mn doping concentration of 5 at.%. However, for the β-ZSM2+ phase, an interesting yellow emission band centered at 575 nm of Mn2+ at the Zn2+ tetrahedral sites was observed. In addition, an unusual red shift with increasing Mn2+ content was also found and attributed to an exchange interaction between Mn2+. Both PL and CL spectra exhibit an intense green and yellow emission centered at 525 and 573 nm, respectively, due to the 4T1 (4G)-6A1 (6S) transition of Mn2+. Furthermore, these results indicated that the Mn2+-doped zinc silicate phosphors may have potential applications in green and yellow emissions displays like field emission displays (FEDs).

Strong carrier localization in stacking faults in semipolar (11-22) GaN

Science.gov (United States)

Okur, Serdal; Monavarian, Morteza; Das, Saikat; Izyumskaya, Natalia; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2015-03-01

The effects of stacking faults (SFs) on optical processes in epitaxially grown semipolar (1122) GaN on m-sapphire substrate have been investigated in detail using steady-state photoluminescence (PL) and time- and polarization-resolved PL. We demonstrate that the carrier recombination dynamics are substantially influenced due to strong carrier localization in the stacking faults. In addition to nonradiative recombination, carrier trapping/detrapping and carrier transfer between the stacking faults and donors are also found to be among the mechanisms affecting the recombination dynamics at different temperatures. PL decay times of both I1-type BSF and 3.31 eV SF (E-type BSF or prismatic stacking fault) do not show temperature dependence up to 80 K while 3.31 eV SF exhibits longer PL decay times (~3 ns) at low temperatures as compared to I1-type BSF (~1 ns), indicative of lower efficiency for radiative recombination. After 80 K, PL decay times decreased by power of ~-1 and ~-2 for 3.31 eV SF and I1-type BSF, respectively. It is obtained from radiative decay times with respect to temperature that the carrier localization becomes higher in I1-type BSF compared to 3.31 eV SF increasing the temperature. I1-type BSF also shows higher PL intensity, which is attributed to larger density, and therefore, larger contribution to recombination dynamics as compared to other type of stacking faults. Polarization-resolved PL measurements also revealed that the degree of polarization for the I1-type BSF (0.30) was twice that for the 3.31 eV SF.

Photoluminescence of acupoint 'Waiqiu' in human superficial fascia

International Nuclear Information System (INIS)

Zhang Yuan; Yan Xiaohui; Liu Chenglin; Dang Ruishan; Zhang Xinyi

2006-01-01

The spectral characters of an acupuncture point named 'Waiqiu' in superficial fascia tissue have been studied by photoluminescence (PL) spectroscopy under the excitation of 457.9 nm. The PL around 'Waiqiu' acupuncture point consists of two sub-bands resulting from the flavin adenine dinucleotide (FAD) and phospholipids, and the porphyrins (including purine, isoxanthopterin and tryptophan), respectively. More emission due to FAD and phospholipids is found inside the acupuncture effect area of 'Waiqiu' than its marginal or outside acupuncture regions. The ratio of emission intensity of FAD and phospholipids to one of porphyrins gradually decreases along the direction away from the center of the acupuncture point. It implies that the component proportion changes between FAD, phospholipids and porphyrins around the 'Waiqiu' acupuncture point. We suggest that there might be a certain relationship between redox function of FAD and 'Waiqiu' acupuncture effect

The effects of xenon ion irradiation on the photoluminesce behavior of poly(p-cresolformaldeyde)/diazonaphtoquinone thin films

Energy Technology Data Exchange (ETDEWEB)

Garcia, Irene T.S. [Depto. de Quimica Analitica e Inorganica, Instituto de Quimica e Geociencias, UFPel, Capao do Leao s/n, 96010-900, Pelotas, RS (Brazil)], E-mail: irene@ufpel.edu.br; Zawislak, F.C.; Balzaretti, Naira [Instituto de Fisica, UFRGS, Caixa Postal 15051, 91501-970 Porto Alegre (Brazil); Samios, D. [Instituto de Quimica, UFRGS, 91501-970 Porto Alegre (Brazil); Sias, U. [Centro Federal de Educacao Tecnologica de Pelotas, 96015-360 Pelotas (Brazil)

2007-10-15

In the present paper, we investigate the origin of photoluminescence (PL) and the changes in the optical properties: refractive index and absorption coefficient, in poly(p-cresolformaldeyde) and diazonaphtoquinone thin films irradiated with Xe ions. Films 400 nm thick have been irradiated with 800 keV Xe{sup 2+} ions in a fluence range from 10{sup 13} to 6 x 10{sup 15} Xe cm{sup -2}. The structural modifications were followed by the techniques of nuclear reaction analysis, elastic recoil detection analysis, Rutherford backscattering, Fourier transform infrared and Raman spectroscopies. The PL behavior was characterised with 488 nm excitation wavelength. The pristine films show emission with maxima of the main bands located at 635, 720 and 830 nm. For fluences up to 10{sup 14} Xe cm{sup -2}, the photoluminescence intensity increases with the irradiation fluence. The chain mobility lowering, characterized by the crosslinked structure, explains this behavior in organic systems. Other possible contribution for increasing of PL intensity, at these fluences, is the presence of oxygen trapped in the polymer chains by the dangling bonds. At intermediate and higher fluences, the photoluminescence starts to decrease. At fluences higher than 10{sup 14} Xe cm{sup -2}, irreversible changes of the organic structure occur and they are characterized by large losses of oxygen and hydrogen, transforming the material into amorphous carbon films. The loss of photoluminescent behavior is associated with the light absorption characteristics of the amorphous carbon structure. This conclusion is supported by the observed increase of the refractive indexes and absorption coefficients, obtained in the infrared region, as well as by the Raman results. Also, the effect of irradiation modifying the refractive index in the infrared region suggests the application of these films as waveguide in this region of wavelength.

Influence of thiol capping on the photoluminescence properties of L-cysteine-, mercaptoethanol- and mercaptopropionic acid-capped ZnS nanoparticles.

Science.gov (United States)

Tiwari, A; Dhoble, S J; Kher, R S

2015-11-01

Mercaptoethanol (ME), mercaptopropionic acid (MPA) and L-cysteine (L-Cys) having -SH functional groups were used as surface passivating agents for the wet chemical synthesis of ZnS nanoparticles. The effect of the thiol group on the optical and photoluminescence (PL) properties of ZnS nanoparticles was studied. L-Cysteine-capped ZnS nanoparticles showed the highest PL intensity among the studied capping agents, with a PL emission peak at 455 nm. The PL intensity was found to be dependent on the concentration of Zn(2+) and S(2-) precursors. The effect of buffer on the PL intensity of L-Cys-capped ZnS nanoparticles was also studied. UV/Vis spectra showed blue shifting of the absorption edge. Copyright © 2015 John Wiley & Sons, Ltd.

Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

International Nuclear Information System (INIS)

Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M.; Chen, D. D.; Xu, F.

2014-01-01

Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488 nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325 nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells

International Nuclear Information System (INIS)

Wang, L.S.; Sun, W.H.; Chua, S.J.; Johnson, Mark

2003-01-01

The GaN/AlGaN multi-quantum-wells (MQWs) have been grown via metalorganic chemical vapor deposition (MOCVD). Micro-photoluminescence (PL) measurement has been performed on non-, In- and Si- doped GaN/AlGaN MQW samples in the temperature ranges of 90-300 K. In the non-doped GaN/AlGaN MQWs we observed the free exciton peak at 3.4587 eV at 90 K. Other exciton related peaks are located at 3.4346, 3.4177, 3.394 and 3.3129 eV, which are probably associated with the strongly localized excitons involving the defects. In In-doped GaN/AlGaN MQWs, the free exciton peaks have a slight red-shift from 3.4712 to 3.4629 eV, but the PL intensities become stronger with increasing trimethylindium (TMIn) flow from 10.6 to 42.6 μmol min -1 . With Si-doping in the well layers, PL exhibits an envelope of exciton bands ranged from 3.4796 (free exciton) to 3.43915 eV. The excitonic peaks in the bands vary in intensity and position with sample temperature. In addition, we have also observed the LO phonon replica of AlGaN interacted by the laser line due to the resonance effect

Spin-exciton interaction and related micro-photoluminescence spectra of ZnSe:Mn DMS nanoribbon.

Science.gov (United States)

Hou, Lipeng; Zhou, Weichang; Zou, Bingsuo; Zhang, Yu; Han, Junbo; Yang, Xinxin; Gong, Zhihong; Li, Jingbo; Xie, Sishen; Shi, Li-Jie

2017-03-10

For their spintronic applications the magnetic and optical properties of diluted magnetic semiconductors (DMS) have been studied widely. However, the exact relationships between the magnetic interactions and optical emission behaviors in DMS are not well understood yet due to their complicated microstructural and compositional characters from different growth and preparation techniques. Manganese (Mn) doped ZnSe nanoribbons with high quality were obtained by using the chemical vapor deposition (CVD) method. Successful Mn ion doping in a single ZnSe nanoribbon was identified by elemental energy-dispersive x-ray spectroscopy mapping and micro-photoluminescence (PL) mapping of intrinsic d-d optical transition at 580 nm, i.e. the transition of 4 T 1 ( 4 G) →  6 A 1 ( 6 s),. Besides the d-d transition PL peak at 580 nm, two other PL peaks related to Mn ion aggregates in the ZnSe lattice were detected at 664 nm and 530 nm, which were assigned to the d-d transitions from the Mn 2+ -Mn 2+ pairs with ferromagnetic (FM) coupling and antiferromagnetic (AFM) coupling, respectively. Moreover, AFM pair formation goes along with strong coupling with acoustic phonon or structural defects. These arguments were supported by temperature-dependent PL spectra, power-dependent PL lifetimes, and first-principle calculations. Due to the ferromagnetic pair existence, an exciton magnetic polaron (EMP) is formed and emits at 460 nm. Defect existence favors the AFM pair, which also can account for its giant enhancement of spin-orbital coupling and the spin Hall effect observed in PRL 97, 126603(2006) and PRL 96, 196404(2006). These emission results of DMS reflect their relation to local sp-d hybridization, spin-spin magnetic coupling, exciton-spin or phonon interactions covering structural relaxations. This kind of material can be used to study the exciton-spin interaction and may find applications in spin-related photonic devices besides spintronics.

Photoluminescence emission at room temperature in zinc oxide nano-columns

International Nuclear Information System (INIS)

Rocha, L.S.R.; Deus, R.C.; Foschini, C.R.; Moura, F.; Garcia, F. Gonzalez; Simões, A.Z.

2014-01-01

Highlights: • ZnO nanoparticles were obtained by microwave-hydrothermal method. • X-ray diffraction reveals a hexagonal structure. • Photoluminescence emission evidenced two absorption peaks, at around 480 nm and 590 nm wavelengths. - Abstract: Hydrothermal microwave method (HTMW) was used to synthesize crystalline zinc oxide (ZnO) nano-columns at the temperature of 120 °C with a soaking time of 8 min. ZnO nano-columns were characterized by using X-ray analyses (XRD), infrared spectroscopy (FT-IR), thermogravimetric analyses (TG-DTA), field emission gun and transmission electron microscopy (FEG-SEM and TEM) and photoluminescence properties (PL). XRD results indicated that the ZnO nano-columns are free of any impurity phase and crystallize in the hexagonal structure. Typical FT-IR spectra for ZnO nano-columns presented well defined bands, indicating a substantial short-range order in the system. PL spectra consist of a broad band at 590 nm and narrow band at 480 nm corresponding to a near-band edge emission related to the recombination of excitons and level emission related to structural defects. These results show that the HTMW synthesis route is rapid, cost effective, and could be used as an alternative to obtain ZnO nano-columns in the temperature of 120 °C for 8 min

Photoluminescence emission at room temperature in zinc oxide nano-columns

Energy Technology Data Exchange (ETDEWEB)

Rocha, L.S.R.; Deus, R.C. [Universidade Estadual Paulista – Unesp, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil); Foschini, C.R. [Universidade Estadual Paulista – Unesp, Instituto de Química, Laboratório Interdisciplinar em Cerâmica (LIEC), Rua Professor Francisco Degni s/n, CEP 14800-90 Araraquara, SP (Brazil); Moura, F.; Garcia, F. Gonzalez [Universidade Federal de Itajubá – Unifei, Campus Itabira, Rua São Paulo, 377, Bairro Amazonas, CEP 35900-37 Itabira, MG (Brazil); Simões, A.Z., E-mail: alezipo@yahoo.com [Universidade Estadual Paulista – Unesp, Faculdade de Engenharia de Guaratinguetá, Av. Dr. Ariberto Pereira da Cunha, 333, Bairro Portal das Colinas, CEP 12516-410 Guaratinguetá, SP (Brazil)

2014-02-01

Highlights: • ZnO nanoparticles were obtained by microwave-hydrothermal method. • X-ray diffraction reveals a hexagonal structure. • Photoluminescence emission evidenced two absorption peaks, at around 480 nm and 590 nm wavelengths. - Abstract: Hydrothermal microwave method (HTMW) was used to synthesize crystalline zinc oxide (ZnO) nano-columns at the temperature of 120 °C with a soaking time of 8 min. ZnO nano-columns were characterized by using X-ray analyses (XRD), infrared spectroscopy (FT-IR), thermogravimetric analyses (TG-DTA), field emission gun and transmission electron microscopy (FEG-SEM and TEM) and photoluminescence properties (PL). XRD results indicated that the ZnO nano-columns are free of any impurity phase and crystallize in the hexagonal structure. Typical FT-IR spectra for ZnO nano-columns presented well defined bands, indicating a substantial short-range order in the system. PL spectra consist of a broad band at 590 nm and narrow band at 480 nm corresponding to a near-band edge emission related to the recombination of excitons and level emission related to structural defects. These results show that the HTMW synthesis route is rapid, cost effective, and could be used as an alternative to obtain ZnO nano-columns in the temperature of 120 °C for 8 min.

Photoluminescence and lasing properties of MAPbBr3 single crystals grown from solution

Science.gov (United States)

Aryal, Sandip; Lafalce, Evan; Zhang, Chuang; Zhai, Yaxin; Vardeny, Z. Valy

Recent studies of solution-grown single crystals of inorganic-organic hybrid lead-trihalide perovskites have suggested that surface traps may play a significant role in their photophysics. We study electron-hole recombination in single crystal MAPbBr3 through such trap states using cw photoluminescence (PL) and ps transient photoinduced absorption (PA) spectroscopies. By varying the depth of the collecting optics we examined the contributions from surface and bulk radiative recombination. We found a surface dominated PL band at the band-edge that is similar to that observed from polycrystalline thin films, as well as a weaker red-shifted emission band that originates from the bulk crystal. The two PL bands are distinguished in their temperature, excitation intensity and polarization dependencies, as well as their ps dynamics. Additionally, amplified spontaneous emission and crystal-related cavity lasing modes were observed in the same spectral range as the PL band assigned to the surface recombination. This work was funded by AFOSR through MURI Grant RA 9550-14-1-0037.

Synthesis and photoluminescence spectroscopy of BaGeF6:Mn4+ red phosphor

Science.gov (United States)

Sekiguchi, Daisuke; Adachi, Sadao

2015-04-01

We synthesized Mn4+-activated BaGeF6 red phosphor by the chemical reaction method from HF, H2SiF6, BaF2, KMnO4, and GeO2 powder. The structural and optical properties of BaGeF6:Mn4+ were investigated using X-ray diffraction analysis, secondary electron microscopy observation, electron spin resonance measurement, photoluminescence (PL), PL excitation (PLE) and Raman scattering spectroscopies, and luminescence decay time measurement. Temperature dependence of the PL intensity was measured from T = 20 to 500 K and analyzed by taking into consideration the Bose-Einstein phonon occupation number. The PLE spectra measured at T = 20 and 300 K and luminescence decay time at T = 20-460 K were also analyzed based on the Franck-Condon and conventional thermal quenching models, respectively. Comprehensive discussion was given on the Mn4+-related PL properties and Raman scattering behaviors in a family of the barium hexafluorometallate phosphors.

Investigation of influence of electronic irradiation on photoluminescence spectrum and ir-spectrum of porous silicon

International Nuclear Information System (INIS)

Daineko, E.A.; Dihanbayev, K.K.; Akhtar, P.; Hussain, A.

2007-01-01

In this article we study the influence of 2-Mev electron irradiation on porous silicon (PS). Photoluminescence (PL) spectrum and IR-spectrum have been done on both newly-prepared PS samples and samples prepared a year ago after the irradiation. We analyzed PL spectrum for both types of PS samples. The experimental results suggest that the peak position in PL spectrum decreases for newly-prepared PS samples. The size of the nanocrystals calculated by the method of singling out of spectrum components was equal to 3.0-3.2 nm. Porosity of the samples was 60-75%. From IR-spectrum of newly-prepared PS samples wide absorption band was observed at 1100 cm/sup -1/ (Si-O-Si bond). Another peak of Si-O-Si group was observed at 850 cm/sub -1/. Also hydrogen absorption bands were appearing from 2000 to 2200 cm/sup -1/, corresponding to vibration modes SiH, SiH/sub 2/, SiH/sub 3/. As a result of electron irradiation the PL intensity of newly-prepared PS samples decreases abruptly by a factor of 30 without peak shifting. As for the samples prepared a year ago we observed a decrease in the PL intensity by 25-30%. From IR-spectrum of PS samples prepared a year ago it was shown that the intensity of bridge bonds corresponding to absorption band 850 cm/sup -1/, decreases gradually. Our experimental data shows that PS samples stored for longer time have better radiation resistant properties than the newly-prepared PS samples due to the replacement of Si-H bonds with more resistant Si-O bonds. Porous silicon, electrochemical anodizing, photoluminescence spectrum, IR-spectrum, electronic irradiation. (author)

Anisotropic visible photoluminescence from thermally annealed few-layer black phosphorus

Science.gov (United States)

Zhao, Chuan; Sekhar, M. Chandra; Lu, Wei; Zhang, Chenglong; Lai, Jiawei; Jia, Shuang; Sun, Dong

2018-06-01

Black phosphorus, a two-dimensional material, with high carrier mobility, tunable direct bandgap and anisotropic electronic properties has attracted enormous research interest towards potential application in electronic, optoelectronic and optomechanical devices. The bandgap of BP is thickness dependent, ranging from 0.3 eV for bulk to 1.3 eV for monolayer, while lacking in the visible region, a widely used optical regime for practical optoelectronic applications. In this work, photoluminescence (PL) centered at 605 nm is observed from the thermally annealed BP with thickness ≤20 nm. This higher energy PL is most likely the consequence of the formation of higher bandgap phosphorene oxides and suboxides on the surface BP layers as a result of the enhanced rate of oxidation. Moreover, the polarization-resolved PL measurements show that the emitted light is anisotropic when the excitation polarization is along the armchair direction. However, if excited along zigzag direction, the PL is nearly isotropic. Our findings suggest that the thermal annealing of BP can be used as a convenient route to fill the visible gap of the BP-based optoelectronic and optomechanical devices.

Photoluminescence study of novel phosphorus-doped ZnO nanotetrapods synthesized by chemical vapour deposition

International Nuclear Information System (INIS)

Yu Dongqi; Hu Lizhong; Qiao Shuangshuang; Zhang Heqiu; Fu Qiang; Chen Xi; Sun Kaitong; Len, Song-En Andy; Len, L K

2009-01-01

Novel phosphorus-doped and undoped single crystal ZnO nanotetrapods were fabricated on sapphire by a simple chemical vapour deposition method, using phosphorus pentoxide (P 2 O 5 ) as the dopant source. The optical properties of the samples were investigated by photoluminescence (PL) spectroscopy. Low-temperature PL measurements of phosphorus-doped and undoped samples were compared, and the results indicated a decrease in deep level defects due to the incorporation of a phosphorus acceptor dopant. The PL spectrum of the phosphorus-doped sample at 10 K exhibited several acceptor-bound exciton related emission peaks. The effect of phosphorus doping on the optical characteristics of the samples was investigated by excitation intensity and temperature dependent PL spectra. The acceptor-binding energies of the phosphorus dopant were estimated to be about 120 meV, in good agreement with the corresponding theoretical and experimental values in phosphorus-doped ZnO films and nanowires.

Temperature dependence of electron mobility, electroluminescence and photoluminescence of Alq{sub 3} in OLED

Energy Technology Data Exchange (ETDEWEB)

Mu Haichuan; White, Dan; Sharpton, Buck [Office of Electronic Miniaturization, University of Alaska at Fairbanks, AK 99701 (United States); Klotzkin, David [Department of Electrical and Computer Engineering and Computer Sciences, University of Cincinnati, Cincinnati, OH 45221 (United States); De Silva, Ajith; Wagner, Hans Peter [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States)], E-mail: fnhm@uaf.edu

2008-12-07

The correlation of electroluminescence (EL), photoluminescence (PL) and electron mobility were investigated over temperature from 60 to 300 K in small-molecule organic light emitting diode (OLED) structures. The devices consisted of ITO/PEDOT(50 nm)/TPD(50 nm)/Alq{sub 3}(60 nm)/LiF(1 nm)/Al(90 nm), and were fabricated with high-vacuum sublimation/evaporation in a cross-linked configuration. Electron mobility was measured using an ac analysis of the device optical modulation characteristics, while PL and EL were measured by measuring optical power out at fixed pump power of 1 mW, and analysis of dc brightness-voltage (L-V) characteristics, respectively. PL intensity and mobility had a clear maximum at around 220 K, while EL efficiency was constant below 220 K and decrease monotonically above. The reason for the temperature dependent EL, PL and electron mobility behaviour will be discussed.

The effect of O2 partial pressure on the photoluminescence of ZnO thin films grown by pulsed laser deposition

International Nuclear Information System (INIS)

Lu, Y.M.; Li, X.P.; Su, S.C.; Cao, P.J.; Jia, F.; Han, S.; Zeng, Y.X.; Liu, W.J.; Zhu, D.L.

2014-01-01

In this paper, photoluminescence (PL) of ZnO thin films prepared on c-Al 2 O 3 substrates by the pulsed laser deposition (PLD) method at different O 2 partial pressures is investigated. For all samples, a narrow ultraviolet (UV) emission and a broad visible emission can be observed at room-temperature (RT). With increasing O 2 partial pressures from 0.2 to 5 Pa, the intensity ratio of the UV to visible emissions increases, and the energy positions of the UV emission band shift to the high energy side. It is noted that the visible part includes two emission bands of green luminescence (GL) and yellow luminescence (YL), in which the GL emission is strong at low oxygen pressure and the YL emission becomes dominant at high O 2 partial pressures. The temperature-dependent PL spectra show that the UV emission is composed of two bands labeled FX and FA. The dependences and possible assignments of these PL bands are briefly discussed. - Highlights: • We confirmed that the RT UV emission band is due to two transitions of the FX and FA. • The intensity of the FX and FA emission bands strongly depends on oxygen partial pressures. • We deduced that the acceptor-like defects located in the grain boundaries are responsible for the FA emission. • The visible emission includes the GL related to V O and the YL related to V Zn or O i . • The GL emission strongly affects the UV emission

Porosity and thickness effect of porous silicon layer on photoluminescence spectra

Science.gov (United States)

Husairi, F. S.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

2018-05-01

The porous silicon nanostructures was prepared by electrochemical etching of p-type silicon wafer. Porous silicon prepared by using different current density and fix etching time with assistance of halogen lamp. The physical structure of porous silicon measured by the parameters used which know as experimental factor. In this work, we select one of those factors to correlate which optical properties of porous silicon. We investigated the surface morphology by using Surface Profiler (SP) and photoluminescence using Photoluminescence (PL) spectrometer. Different physical characteristics of porous silicon produced when current density varied. Surface profiler used to measure the thickness of porous and the porosity calculated using mass different of silicon. Photoluminescence characteristics of porous silicon depend on their morphology because the size and distribution of pore its self will effect to their exciton energy level. At J=30 mA/cm2 the shorter wavelength produced and it followed the trend of porosity with current density applied.

Terahertz-field-induced photoluminescence of nanostructured gold films

DEFF Research Database (Denmark)

Iwaszczuk, Krzysztof; Malureanu, Radu; Zalkovskij, Maksim

2013-01-01

We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced at the pe......We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced...

Photoluminescence properties of Li{sup +}-doped KNbO{sub 3}: Eu{sup 3+} phosphors

Energy Technology Data Exchange (ETDEWEB)

Balakrishnaiah, R.; Kim, Dongwoo; Yi, Soungsoo; Kim, Sunghoon [Silla University, Busan (Korea, Republic of); Jang, Kiwan; Lee, Hosueb [Changwon National University, Changwon (Korea, Republic of); Moon, Byungkee; Jeong, Junghyun [Pukyong National University, Busan (Korea, Republic of)

2010-12-15

Different concentrations of Li{sup +}-ions doped KNbO{sub 3}:Eu polycrystalline powder phosphors were prepared by using the conventional solid state reaction method and were characterized by using X-ray diffraction, field emission scanning electron microscopy, and by using photoluminescence excitation and emission measurements. The morphological and the photoluminescence properties of the phosphors were effectively improved with Li-doping. The PL properties as a function of Li concentration in the Li-doped KNbO{sub 3}:Eu phosphors using different excitation wavelengths, along with a comparison of results with these in similar reported works, are discussed in the present work.

The mechanism of the photoluminescence changes in bio-conjugated CdSe/ZnS quantum dots

Science.gov (United States)

Borkovska, L.; Korsunska, N.; Stara, T.; Kolomys, O.; Strelchuk, V.; Rachkov, O.; Kryshtab, T.

2013-09-01

The change of the photoluminescence (PL) and optical characteristics in non-conjugated and conjugated with S6K2 antibody CdSe/ZnS core/shell quantum dots (QDs) during storage in air has been studied by the conventional PL, micro-PL and micro-Raman techniques. The QDs dried on a crystalline Si substrate were kept in the darkness and under illumination. In the PL spectra, the storage resulted in a blue shift of PL peak position, in the increasing of the full width at a half maximum (FWHM) of the PL band and in the decreasing of the PL intensity. In the Raman spectra, the shift of the CdSe LO peak position to the low frequency region and the increasing of its FWHM were observed. The transformations in the PL and optical characteristics correlate with each other and are found to be the largest in bio-conjugated QDs stored under illumination. The increase of the light intensity accelerated the changes occurred during storage. An oxidation of the QD core, which decreases the QD size, is supposed to be responsible for observed transformations. The bio-conjugation is assumed to promote QD oxidation that results in different PL peak position in stored non-conjugated and bio-conjugated QDs. The mechanism of the effect is discussed.

Excitation intensity dependent photoluminescence of annealed two-dimensional MoS_2 grown by chemical vapor deposition

International Nuclear Information System (INIS)

Kaplan, D.; Swaminathan, V.; Mills, K.; Lee, J.; Torrel, S.

2016-01-01

Here, we present detailed results of Raman and photoluminescence (PL) characterization of monolayers of MoS_2 grown by chemical vapor deposition (CVD) on SiO_2/Si substrates after thermal annealing at 150 °C, 200 °C, and 250 °C in an argon atmosphere. In comparison to the as-grown monolayers, annealing in the temperature range of 150–250 °C brings about significant changes in the band edge luminescence. It is observed that annealing at 150 °C gives rise to a 100-fold increase in the PL intensity and produces a strong band at 1.852 eV attributed to a free-to-bound transition that dominates over the band edge excitonic luminescence. This band disappears for the higher annealing temperatures. The improvement in PL after the 200 °C anneal is reduced in comparison to that obtained after the 150 °C anneal; this is suggested to arise from a decrease in the non-radiative lifetime caused by the creation of sulfur di-vacancies. Annealing at 250 °C degrades the PL in comparison to the as-grown sample because of the onset of disorder/decomposition of the sample. It is clear that the PL features of the CVD-grown MoS_2 monolayer are profoundly affected by thermal annealing in Ar atmosphere. However, further detailed studies are needed to identify, unambiguously, the role of native defects and/or adsorbed species in defining the radiative channels in annealed samples so that the beneficial effect of improvement in the optical efficiency of the MoS_2 monolayers can be leveraged for various device applications.

On red-shift of UV photoluminescence with decreasing size of silicon nanoparticles embedded in SiO2 matrix grown by pulsed laser deposition

International Nuclear Information System (INIS)

Chaturvedi, Amita; Joshi, M.P.; Rani, Ekta; Ingale, Alka; Srivastava, A.K.; Kukreja, L.M.

2014-01-01

Ensembles of silicon nanoparticles (Si-nps) embedded in SiO 2 matrix were grown by alternate ablation of Si and SiO 2 targets using KrF excimer laser based pulsed laser deposition (PLD). The sizes of Si-nps (mean size ranging from 1–5 nm) were controlled by varying the ablation time of silicon target. Transmission electron microscopy (TEM) along with selected area electron diffraction (SAED) and Raman spectroscopy were used to confirm the growth of silicon nanoparticles, its size variation with growth time and the crystalline quality of the grown nanoparticles. TEM analysis showed that mean size and size distribution of Si-nps increased with increase in the ablation time of Si target. Intense peaks ∼521 cm −1 in Raman analysis showed reasonably good crystalline quality of grown Si-nps. We observed asymmetric broadening of phonon line shapes which also redshift with decreasing size of Si-nps. Photoluminescence (PL) from these samples, obtained at room temperature, was broad band and consisted of three bands in UV and visible range. The intensity of PL band in UV spectral range (peak ∼3.2 eV) was strong compared to visible range bands (peaks ∼2.95 eV and ∼2.55 eV). We observed a small red-shift (∼0.07 eV) of peak position of UV range PL with the decrease in the mean sizes of Si-nps, while there was no appreciable size dependent shift of PL peak positions for other bands in the visible range. The width of UV PL band was also found to increase with decrease of Si-nps mean sizes. Based on the above observations of size dependent redshift of UV range PL band together with the PL lifetimes and PL excitation spectroscopy, the origin of UV PL band is attributed to the direct band transition at the Γ point of Si band structure. Visible range bands were ascribed as defect related transitions. The weak intensities of PL bands ∼2.95 eV and ∼2.55 eV suggested that Si nanoparticles grown by PLD were efficiently capped or passivated by SiO 2 with low density of

Excitation wavelength dependent photoluminescence emission behavior, UV induced photoluminescence enhancement and optical gap tuning of Zn0.45Cd0.55S nanoparticles for optoelectronic applications

Science.gov (United States)

Osman, M. A.; Abd-Elrahim, A. G.

2018-03-01

In the present study, we investigate the excitation wavelength (λex) dependent photoluminescence (PL) behavior in Zn0.45Cd0.55S nanoparticles. The deconvoluted PL emission bands for nanopowders and nanocolloids reveal noticeable spectral blue shift with decreasing λex accompanied by intensity enhancement. This unusual behavior is explained in terms of selective particle size distribution in nanostructures, advancing of fast ionization process at short λex; and solvation process in polar solvent. In addition, we attributed the UV-induced PL intensity enhancement and blue shift of the optical gap to the reduction in particle size by photo-corrosion process associated with the improvement in the quantum size effect; surface modification due to cross-linkage improvement of capping molecules at NPs surface; the creation of new radiative centers and the formation of photo-passivation layers from ZnSO4 and CdSO4, and photo-enhanced oxygen adsorption on Zn0.45Cd0.55S nanoparticles surface.

Electric Field Modulation of Semiconductor Quantum Dot Photoluminescence: Insights Into the Design of Robust Voltage-Sensitive Cellular Imaging Probes.

Science.gov (United States)

Rowland, Clare E; Susumu, Kimihiro; Stewart, Michael H; Oh, Eunkeu; Mäkinen, Antti J; O'Shaughnessy, Thomas J; Kushto, Gary; Wolak, Mason A; Erickson, Jeffrey S; Efros, Alexander L; Huston, Alan L; Delehanty, James B

2015-10-14

The intrinsic properties of quantum dots (QDs) and the growing ability to interface them controllably with living cells has far-reaching potential applications in probing cellular processes such as membrane action potential. We demonstrate that an electric field typical of those found in neuronal membranes results in suppression of the QD photoluminescence (PL) and, for the first time, that QD PL is able to track the action potential profile of a firing neuron with millisecond time resolution. This effect is shown to be connected with electric-field-driven QD ionization and consequent QD PL quenching, in contradiction with conventional wisdom that suppression of the QD PL is attributable to the quantum confined Stark effect.

Effects of electrolyte gating on photoluminescence spectra of large-area WSe2monolayer films

KAUST Repository

Matsuki, Keiichiro; Pu, Jiang; Kozawa, Daichi; Matsuda, Kazunari; Li, Lain-Jong; Takenobu, Taishi

2016-01-01

We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (>107Vcm%1) and the accumulation of high carrier density (>1013cm%2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation. © 2016 The Japan Society of Applied Physics.

Effects of electrolyte gating on photoluminescence spectra of large-area WSe2monolayer films

KAUST Repository

Matsuki, Keiichiro

2016-05-24

We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (>107Vcm%1) and the accumulation of high carrier density (>1013cm%2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation. © 2016 The Japan Society of Applied Physics.

Offer a novel method for size appraise of NiO nanoparticles by PL analysis: Synthesis by sonochemical method

Directory of Open Access Journals (Sweden)

Seyid Javad Musevi

2016-05-01

Full Text Available In this work, we will discuss the optical properties of NiO nanoparticles that we have investigated recently by photoluminescence (PL spectroscopy. In particular, we will show the blue-shifts of PL, originating from the electron–hole recombination of the self-trapped exciton (STE, observed in smaller-sized NiO nanoparticles. To explain the size effect in relating to the STE PL shift, a question has been raised on whether it is appropriate to apply him quantum confinement (QC theory usually used for the Mott-Winner type excitons in semiconductors to wide band-gap material, such as silica. Variations in several parameters and their effects on the structural (crystal size and morphology properties of nanoparticles were investigated. Characterizations were carried out by X-ray diffraction (XRD, scanning electron microscopy (SEM, thermal stability (TGA and DTA, solid state UV and solid state florescent (PL.

FastFLIM, the all-in-one engine for measuring photoluminescence lifetime of 100 picoseconds to 100 milliseconds

Science.gov (United States)

Sun, Yuansheng; Coskun, Ulas; Liao, Shih-Chu Jeff; Barbieri, Beniamino

2018-02-01

Photoluminescence (PL) refers to light emission initiated by any form of photon excitation. PL spectroscopy and microscopy imaging has been widely applied in material, chemical and life sciences. Measuring its lifetime yields a new dimension of the PL imaging and opens new opportunities for many PL applications. In solar cell research, quantification of the PL lifetime has become an important evaluation for the characteristics of the Perovskite thin film. Depending upon the PL process (fluorescence, phosphorescence, photon upconversion, etc.), the PL lifetimes to be measured can vary in a wide timescale range (e.g. from sub-nanoseconds to microseconds or even milliseconds) - it is challenging to cover this wide range of lifetime measurements by a single technique efficiently. Here, we present a novel digital frequency domain (DFD) technique named FastFLIM, capable of measuring the PL lifetime from 100 ps to 100 ms at the high data collection efficiency (up to 140-million counts per second). Other than the traditional nonlinear leastsquare fitting analysis, the raw data acquired by FastFLIM can be directly processed by the model-free phasor plots approach for instant and unbiased lifetime results, providing the ideal routine for the PL lifetime microscopy imaging.

Excitation dependence of photoluminescence in silicon quantum dots

International Nuclear Information System (INIS)

Wen Xiaoming; Lap Van Dao; Hannaford, Peter; Cho, E-C; Cho, Young H; Green, Martin A

2007-01-01

We have studied the optical properties of silicon quantum dots (QDs) embedded in a silicon oxide matrix using photoluminescence (PL) and time-resolved PL. A broad luminescence band is observed in the red region, in which the time evolution exhibits a stretched exponential decay. With increasing excitation intensity a significant saturation effect is observed. Direct electron-hole recombination is the dominant effect in the red band. A relatively narrow peak appears around 1.5 eV, which is attributed to the interface states overlapping with transition from the ground state of the silicon QDs. The saturation factor increases slowly with detection photon energy between 1.5 and 1.8 eV, which is attributed to the emission from zero-phonon electron-hole recombination. At higher photon energies the significantly increased saturation factor suggests a different emission mechanism, most likely the defect states from silicon, silicon oxide or silicon rich oxide

Simultaneous synthesis and densification of transparent, photoluminescent polycrystalline YAG by current activated pressure assisted densification (CAPAD)

Energy Technology Data Exchange (ETDEWEB)

Penilla, E.H.; Kodera, Y. [Mechanical Engineering Dept., Materials Science and Engineering Program, University of California, Riverside (United States); Garay, J.E., E-mail: jegaray@engr.ucr.edu [Mechanical Engineering Dept., Materials Science and Engineering Program, University of California, Riverside (United States)

2012-08-20

Highlights: Black-Right-Pointing-Pointer We report a method for the synthesis of transparent and PL bulk polycrystalline Ce:YAG using CAPAD. Black-Right-Pointing-Pointer The process uses {gamma}-Al{sub 2}O{sub 3}, Y{sub 2}O{sub 3}, and CeO{sub 2} nanopowders, reacted and densified simultaneously. Black-Right-Pointing-Pointer The synthesis/densification kinetics are faster than those reported previously. Black-Right-Pointing-Pointer Optical measurements show good transparency in the visible and photoluminescence (PL) in the Ce:YAG. Black-Right-Pointing-Pointer The PL peak is broad and appears white when excited using blue light. - Abstract: We report a method for the synthesis and processing of transparent bulk polycrystalline yttrium aluminum garnet (YAG) and photoluminescent Ce-doped YAG ceramics via solid-state reactive-current activated pressure assisted densification (CAPAD). The process uses commercially available {gamma}-Al{sub 2}O{sub 3}, Y{sub 2}O{sub 3}, and CeO{sub 2} nanopowders. The nanopowders were reacted and densified simultaneously at temperatures between 850 Degree-Sign C and 1550 Degree-Sign C and at a maximum pressure of 105 MPa. The solid-state reaction to phase pure YAG occurs in under 4 min at processing temperatures 1100 Degree-Sign C which is significantly faster (on the order of tens of hours) and occurs at much lower temperatures ({approx}600 Degree-Sign C) compared to conventional reaction sintering. We found that the reaction significantly improves densification - the shrinkage rate of reaction-produced YAG was three times higher than that of YAG using pre-reacted powder. The Ce additions were found to retard the reaction driven shrinkage kinetics by a factor {approx}3, but are still faster (by a factor {approx}1.6) than those associated with direct densification (no synthesis). Densities >99% were achieved in both pure YAG and Ce doped YAG (Ce:YAG). Results of optical measurements show good transparency in the visible and

Photoluminescence from a Tb-doped photonic crystal microcavity for white light generation

International Nuclear Information System (INIS)

Li Yigang; Almeida, Rui M

2010-01-01

Terbium-doped one-dimensional triple microcavities have been prepared by sol-gel processing. The photoluminescence (PL) of Tb 3+ ions outside a microcavity structure, when excited by blue laser light at 488 nm, consisted of three distinct peaks at 542, 587 and 619 nm. When embedded in the microcavities, the three Tb 3+ PL peaks were enhanced, balanced and broadened by the photonic crystal structure and combined into a continuous broad band. An analysis in the CIE colour space showed that white light can be obtained by mixing the modified Tb 3+ PL with the blue exciting light, while this is impossible with the original PL profile. This novel technique may improve white light generation by enhancing and modifying the spontaneous emission of current phosphors. It may also lead to the development of new rare-earth phosphor materials based on 4f-4f transitions, able to generate white light more efficiently, via simpler and cheaper alternatives to the current phosphor compositions. A novel configuration to combine this kind of structure with a white light-emitting-diode (LED) is also proposed.

Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.

Science.gov (United States)

Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming

2012-07-11

Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room temperature photoluminescence (PL) were observed from the samples in which Si spacers were grown at a higher temperature. The enhancement of PL is explained by higher effective electrons capturing in the larger size Ge QDs. Quantum confinement of the Ge QDs is responsible for the redshift of PL spectra. The Ge QDs' size and content were investigated by atomic force microscopy and Raman scattering measurements.

Photoluminescence and structural properties of CdSe quantum dot–gelatin composite films

Energy Technology Data Exchange (ETDEWEB)

Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Gudymenko, O.; Kladko, V. [V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine, Pr. Nauky 41, 03028 Kyiv (Ukraine); Stroyuk, O.; Raevskaya, A. [L. Pysarzhevsky Institute of Physical Chemistry of NAS of Ukraine, Pr. Nauky 31, 03028 Kyiv (Ukraine); Kryshtab, T. [Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9 U.P.A.L.M., 07738 Mexico D.F. (Mexico)

2014-11-15

Optical and structural properties of composite films of CdSe quantum dots (QDs) embedded in gelatin matrix have been investigated by photoluminescence (PL), optical absorption and X-ray diffraction (XRD) methods. The optical absorption of the composite in the visible spectral range is found to be determined mainly by light absorption in the QDs. The decrease of the film transparency and the shift of the absorption edge to lower energies observed upon thermal annealing of the films at 140–160 °C are ascribed to the formation of chromophore groups in gelatin matrix. XRD patterns of the composite revealed helix to coil transition in gelatin matrix under thermal annealing of the composite at 100–160 °C. It is found that PL spectra of the composite are dominated by exciton and defect-related emission of the QDs and also contain weak emission of gelatin matrix. It is found that thermal annealing of the composite at 100–160 °C changes PL intensity and produces the shift of the PL bands to lower energies. As the annealed composite was kept in air for several months, the shift of exciton-related PL band position restored partially and the PL intensity increased. It is proposed that the increase of the PL intensity upon the thermal annealing of composite at 140 °C can be used for enhancement of the QD-related PL. Changes that occurred in the PL spectra of composite are ascribed to structural and chemical transformations in gelatin matrix and at the QD/gelatin interface.

Spectrally and spatially resolved photoluminescence. Lateral fluctuations and depth profiles of Cu(In,Ga)Se2-absorbers

International Nuclear Information System (INIS)

Neumann, Oliver

2013-01-01

The aim of this thesis is the development and refinement of photoluminescence (PL) methods for inhomogeneous absorbers to identify lateral fluctuations and depth-dependent variations of spectroscopic, optical and opto-electronic properties in the submicron/micron range. The first approach deals with the spectral investigation of PL emission from the front and the rear side of an absorber, whereas the second idea is about the analysis of PL spectra from the front side of the absorber for different absorber thicknesses. Another technique for determination of depth-dependent variations are confocal PL measurements at cross sections of absorbers. The last concept pursues the study of lateral fluctuations with an optical near-field microscope on specially prepared absorbers. These four strategies are demonstrated with samples based on Cu(In,Ga)Se 2 .

Interfacial synthesis of polyethyleneimine-protected copper nanoclusters: Size-dependent tunable photoluminescence, pH sensor and bioimaging.

Science.gov (United States)

Wang, Chan; Yao, Yagang; Song, Qijun

2016-04-01

The copper nanoclusters (CuNCs) offer excellent potential as functional biological probes due to their unique photoluminescence (PL) properties. Herein, CuNCs capped with hyperbranched polyethylenimine (PEI) were prepared by the interfacial etching approach. The resultant PEI-CuNCs exhibited good dispersion and strong fluorescence with high quantum yields (QYs, up to 7.5%), which would be endowed for bioimaging system. By changing the reaction temperatures from 25 to 150 °C, the size of PEI-CuNCs changed from 1.8 to 3.5 nm, and thus tunable PL were achieved, which was confirmed by transmission electron microscopy (TEM) imagings and PL spectra. Besides, PEI-CuNCs had smart absorption characteristics that the color changes from colorless to blue with changing the pH value from 2.0 to 13.2, and thus they could be used as color indicator for pH detection. In addition, the PEI-CuNCs exhibited good biocompatibility and low cytotoxicity to 293T cells through MTT assay. Owing to the positively charged of PEI-CuNCs surface, they had the ability to capture DNA, and the PEI-CuNCs/DNA complexes could get access to cells for efficient gene expression. Armed with these attractive properties, the synthesized PEI-CuNCs are quite promising in biological applications. Copyright © 2016 Elsevier B.V. All rights reserved.

Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

International Nuclear Information System (INIS)

Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

2011-01-01

Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

Science.gov (United States)

Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

2011-05-01

Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

Energy Technology Data Exchange (ETDEWEB)

Prtljaga, Nikola; D' Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo, E-mail: nikolap@science.unitn.it [Department of Physics, University of Trento, Via Sommarive 14, I-38123 Trento (Italy)

2011-05-27

Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

An intense ultraviolet photoluminescence in sol-gel ZnO-SiO sub 2 nanocomposites

CERN Document Server

Fu Zheng Ping; Li Li; Dong Wei Wei; Jia Chong; Wu Wan

2003-01-01

We report the phenomenon that the intensity of the ultraviolet (UV) photoluminescence (PL) from ZnO was greatly enhanced by incorporating ZnO into the SiO sub 2 matrix. PL excitation results show that both the ZnO nanoparticles and the SiO sub 2 matrix in the nanocomposites contribute to the luminescence process for the UV band. On the basis of the x-ray photoelectron spectra, we suggest that interface energy states are formed due to the presence of Zn-O-Si bonds between ZnO nanoparticles and the SiO sub 2 matrix. A tentative model concerning the contribution of the ZnO nanoparticles, SiO sub 2 matrix, and ZnO-SiO sub 2 interface is suggested to explain the PL enhancement effect.

Analysis of polarized photoluminescence emission of ordered III–V semiconductor quaternary alloys

Energy Technology Data Exchange (ETDEWEB)

Prutskij, Tatiana, E-mail: tatiana.prutskij@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Makarov, Nykolay, E-mail: nykolay.makarov@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Attolini, Giovanni, E-mail: giovanni@imem.cnr.it [IMEM/CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy)

2016-04-15

Ternary and quaternary III–V alloys obtained by metal-organic vapor-phase epitaxy (MOVPE) grow very often with some degree of atomic ordering. Atomic ordering reduces the symmetry of the crystal lattice and thus drastically changes optical properties of the alloy. Moreover, the photoluminescence (PL) emission becomes polarized and its study helps to understand the atomic arrangement within the crystal lattice. In this work we experimentally studied the polarization of the PL emission from different crystallographic planes of several quaternary III–V semiconductor alloys grown on GaAs substrates by MOVPE. We compare the measured PL emission polarization angular patterns with those calculated with a model made for ternary alloys and discuss the limits of application of this model for quaternaries. It is found that the experimentally obtained polarization patterns are consistent with the existence of different ordering crystallographic planes for III- and for V-group atoms.

Preparation and Characterization of Cerium (III Doped Captopril Nanoparticles and Study of their Photoluminescence Properties

Directory of Open Access Journals (Sweden)

Ghamami Shahriar

2016-01-01

Full Text Available In this research Ce3+ doped Captopril nanoparticles (Ce3+ doped CAP-NP were prepared by a cold welding process and have been studied. Captopril may be applied in the treatment of hypertension and some types of congestive heart failure and for preventing kidney failure due to high blood pressure and diabetes. CAP-NP was synthesized by a cold welding process. The cerium nitrate was added at a ratio of 10% and the optical properties have been studied by photoluminescence (PL. The synthesized compounds were characterized by Fourier transform infrared spectroscopy. The size of CAP-NP was calculated by X-ray diffraction (XRD. The size of CAP-NP was in the range of 50 nm. Morphology of surface of synthesized nanoparticles was studied by scanning electron microscopy (SEM. Finally the luminescence properties of undoped and doped CAP-NP were compared. PL spectra from undoped CAP-NP show a strong pack in the range of 546 nm after doped cerium ion into the captopril appeared two bands at 680 and 357 nm, which is ascribed to the well-known 5d–4f emission band of the cerium.

Time-resolved ultraviolet near-field scanning optical microscope for characterizing photoluminescence lifetime of light-emitting devices.

Science.gov (United States)

Park, Kyoung-Duck; Jeong, Hyun; Kim, Yong Hwan; Yim, Sang-Youp; Lee, Hong Seok; Suh, Eun-Kyung; Jeong, Mun Seok

2013-03-01

We developed a instrument consisting of an ultraviolet (UV) near-field scanning optical microscope (NSOM) combined with time-correlated single photon counting, which allows efficient observation of temporal dynamics of near-field photoluminescence (PL) down to the sub-wavelength scale. The developed time-resolved UV NSOM system showed a spatial resolution of 110 nm and a temporal resolution of 130 ps in the optical signal. The proposed microscope system was successfully demonstrated by characterizing the near-field PL lifetime of InGaN/GaN multiple quantum wells.

Probing the photoluminescence properties of gold nanoclusters by fluorescence lifetime correlation spectroscopy

International Nuclear Information System (INIS)

Yuan, C. T.; Lin, T. N.; Shen, J. L.; Lin, C. A.; Chang, W. H.; Cheng, H. W.; Tang, J.

2013-01-01

Gold nanoclusters (Au NCs) have attracted much attention for promising applications in biological imaging owing to their tiny sizes and biocompatibility. So far, most efforts have been focused on the strategies for fabricating high-quality Au NCs and then characterized by conventional ensemble measurement. Here, a fusion single-molecule technique combining fluorescence correlation spectroscopy and time-correlated single-photon counting can be successfully applied to probe the photoluminescence (PL) properties for sparse Au NCs. In this case, the triplet-state dynamics and diffusion process can be observed simultaneously and the relevant time constants can be derived. This work provides a complementary insight into the PL mechanism at the molecular levels for Au NCs in solution

Enhanced photoluminescence of Si nanocrystals-doped cellulose nanofibers by plasmonic light scattering

Energy Technology Data Exchange (ETDEWEB)

Sugimoto, Hiroshi [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary Street, Boston, Massachusetts 02215 (United States); Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan); Zhang, Ran [Division of Materials Science and Engineering, Boston University, 15 Saint Mary' s Street, Brookline, Massachusetts 02446 (United States); Reinhard, Björn M. [Department of Chemistry and Photonics Center, Boston University, Boston, Massachusetts 02215 (United States); Fujii, Minoru [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan); Perotto, Giovanni; Marelli, Benedetto; Omenetto, Fiorenzo G. [Department of Biomedical Engineering and Department of Physics, Tufts University, 4 Colby Street, Medford, Massachusetts 02155 (United States); Dal Negro, Luca, E-mail: dalnegro@bu.edu [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary Street, Boston, Massachusetts 02215 (United States); Division of Materials Science and Engineering, Boston University, 15 Saint Mary' s Street, Brookline, Massachusetts 02446 (United States)

2015-07-27

We report the development of bio-compatible cellulose nanofibers doped with light emitting silicon nanocrystals and Au nanoparticles via facile electrospinning. By performing photoluminescence (PL) spectroscopy as a function of excitation wavelength, we demonstrate plasmon-enhanced PL by a factor of 2.2 with negligible non-radiative quenching due to plasmon-enhanced scattering of excitation light from Au nanoparticles to silicon nanocrystals inside the nanofibers. These findings provide an alternative approach for the development of plasmon-enhanced active systems integrated within the compact nanofiber geometry. Furthermore, bio-compatible light-emitting nanofibers prepared by a cost-effective solution-based processing are very promising platforms for biophotonic applications such as fluorescence sensing and imaging.

Influence of Ag doping on structural, optical, and photoluminescence properties of nanostructured AZO films by sol–gel technique

International Nuclear Information System (INIS)

Khan, Firoz; Baek, Seong-Ho; Kim, Jae Hyun

2014-01-01

Graphical abstract: The optical band gap of the Ag–AZO film first decreased to a value of ∼3.31 eV for a 1% Ag/Zn atomic ratio from a value of ∼3.69 for undoped AZO film. For higher values (beyond a 1% Ag/Zn atomic ratio) of Ag doping, the values of Eg started to increase and finally attained a value of ∼3.66 eV for an Ag/Zn 3% atomic ratio. The photoluminescence (PL) studies showed that the relative PL intensity of the Ag–AZO films in blue (IB) and green (IG) regions increased with Ag doping. The PL positions of these peaks were blue shifted with increased Ag content up to an Ag/Zn atomic ratio of 3%. The increase in IB and IG is due to the charge difference between Ag + and Zn 2+ , whereas shifting of the PL positions is due to the size of Ag + and Zn 2+ ions. -- Highlights: • The optical band gap of the Ag–AZO film is tuned with Ag doping. • The PL intensity of the Ag–AZO film in visible region is increased with Ag doping. • The PL positions of these peaks were blue shifted with increased Ag content. • The increase in I B and I G is due to the charge difference between Ag + and Zn 2+ . • The shifting of the PL positions is due to the size of Ag + and Zn 2+ ions. -- Abstract: The effects of Ag doping on the structural, electrical, optical, and photoluminescence properties of sol-gel derived Al rich zinc oxide (Ag–AZO) films are studied. The Al/Zn atomic ratio was constant (∼20%) in all the films, whereas the Ag/Zn atomic ratio varied from 0% to 3%. All the films were highly transparent in the 400–1200 nm wavelength range. The XRD results and surface morphologies of the films confirmed that the grain size increased with Ag doping. The optical band gap (E g ) of the Ag–AZO film first decreased to a value of ∼3.31 eV for a 1% Ag/Zn atomic ratio from a value of ∼3.69 for undoped AZO film. For higher values (beyond a 1% Ag/Zn atomic ratio) of Ag doping, the values of E g started to increase and finally attained a value of ∼3.66 e

Effect of Ligand Exchange on the Photoluminescence Properties of Cu-Doped Zn-In-Se Quantum Dots

Science.gov (United States)

Dong, Xiaofei; Xu, Jianping; Yang, Hui; Zhang, Xiaosong; Mo, Zhaojun; Shi, Shaobo; Li, Lan; Yin, Shougen

2018-04-01

The surface-bound ligands of a semiconductor nanocrystal can affect its electron transition behavior. We investigate the photoluminescence (PL) properties of Cu-doped Zn-In-Se quantum dots (QDs) through the exchange of oleylamine with 6-mercaptohexanol (MCH). Fourier transform infrared and 1H nuclear magnetic resonance spectroscopies, and mass spectrometry reveal that the short-chain MCH molecules are bound to the QD surface. The emission peaks remain unchanged after ligand exchange, and the PL quantum yield is reduced from 49% to 38%. The effects of particle size and defect type on the change in PL behavior upon ligand substitution are excluded through high-resolution transmission electron microscopy, UV-Vis absorption, and PL spectroscopies. The origin of the decreased PL intensity is associated with increased ligand density and the stronger ligand electron-donating abilities of MCH-capped QDs that induce an increase in the nonradiative transition probability. A lower PL quenching transition temperature is observed for MCH-capped QDs and is associated with increasing electron-acoustic phonon coupling due to the lower melting temperature of MCH.

Annealing effects on photoluminescence of SiNx films grown by PECVD

International Nuclear Information System (INIS)

Komarov, F.F.; Parkhomenko, I.N.; Vlasukova, L.A.; Milchanin, O.V.; Togambayeva, A.K.; Kovalchuk, N.S.

2013-01-01

Si-rich and N-rich silicon nitride films were deposited at low temperature 300 °C by using plasma-enhanced chemical vapor deposition (PECVD). The optical and structural properties of these films have been investigated by ellipsometry, Rutherford backscattering (RBS), transmission electron microscopy (TEM), Raman spectroscopy (RS) and photoluminescence (PL). The formation of silicon clusters in both Si-rich and N-rich silicon nitride films after annealing at 900 °C and 1000 °C for hour in N 2 ambient has been revealed by TEM. Dependency of PL spectra on stoichiometry and post-annealing temperature was analyzed. The contribution of Si and N-related defects in emitting properties of Si-rich and N-rich SiN x has been discussed. (authors)

Color-tunable mixed photoluminescence emission from Alq3 organic layer in metal-Alq3-metal surface plasmon structure

OpenAIRE

Chen, Nai-Chuan; Liao, Chung-Chi; Chen, Cheng-Chang; Fan, Wan-Ting; Wu, Jin-Han; Li, Jung-Yu; Chen, Shih-Pu; Huang, Bohr-Ran; Lee, Li-Ling

2014-01-01

This work reports the color-tunable mixed photoluminescence (PL) emission from an Alq3 organic layer in an Au-Alq3-Au plasmonic structure through the combination of organic fluorescence emission and another form of emission that is enabled by the surface plasmons in the plasmonic structure. The emission wavelength of the latter depends on the Alq3 thickness and can be tuned within the Alq3 fluorescent spectra. Therefore, a two-color broadband, color-tunable mixed PL structure was obtained. Ob...

Effect of annealing on photoluminescence properties of neon implanted GaN

Energy Technology Data Exchange (ETDEWEB)

Majid, Abdul [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); Zhu, J J [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Wang, Y T [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, W [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Lu, G J [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, W B [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhang, L Q [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, Z S [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhao, D G [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhang, S M [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Jiang, D S; Yang, H [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)

2008-01-21

The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10{sup 14} to 9 x 10{sup 15} cm{sup -2} and annealed isochronally at 800 and 900 deg. C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 deg. C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 deg. C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10{sup 15} cm{sup -2}. The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of V{sub Ga}O{sub N} complexes caused by high energy ion implantation.

Effect of annealing on photoluminescence properties of neon implanted GaN

International Nuclear Information System (INIS)

Majid, Abdul; Ali, Akbar; Zhu, J J; Wang, Y T; Liu, W; Lu, G J; Liu, W B; Zhang, L Q; Liu, Z S; Zhao, D G; Zhang, S M; Jiang, D S; Yang, H

2008-01-01

The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10 14 to 9 x 10 15 cm -2 and annealed isochronally at 800 and 900 deg. C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 deg. C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 deg. C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10 15 cm -2 . The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of V Ga O N complexes caused by high energy ion implantation

Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the milling

International Nuclear Information System (INIS)

Pociask, M.; Izhnin, I.I.; Mynbaev, K.D.; Izhnin, A.I.; Dvoretsky, S.A.; Mikhailov, N.N.; Sidorov, Yu.G.; Varavin, V.S.

2010-01-01

Simultaneous measurements of electrical conductivity, the Hall coefficient, and photoluminescence (PL) spectra of ion-milled Hg 1 - x Cd x Te films (x ∼ 0.30 and 0.38) were performed during post-milling ageing of the films at 293 K. In the course of the PL study, a 'relaxation' of the blue-shift of the PL band of ion-milled Hg 0.70 Cd 0.30 Te was observed. The relaxation was caused by the decrease of the electron concentration due to gradual disintegration of defects induced by the milling. It is shown that while ion milling substantially changes the electrical properties of Hg 1 - x Cd x Te, its PL spectrum in the long-term is affected insignificantly.

Photoluminescence detection of alpha particle using DAM-ADC nuclear detector

Energy Technology Data Exchange (ETDEWEB)

Abdalla, Ayman M., E-mail: aymanabdalla62@hotmail.com [Department of Physics, College of Science and Arts, Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Promising Centre for Sensors and Electronic Devices (PCSED), Najran University, P.O. Box: 1988, Najran 11001 (Saudi Arabia); Harraz, Farid A., E-mail: fharraz68@yahoo.com [Promising Centre for Sensors and Electronic Devices (PCSED), Najran University, P.O. Box: 1988, Najran 11001 (Saudi Arabia); Nanostructured Materials and Nanotechnology Division, Central Metallurgical Research and Development Institute (CMRDI), P.O. Box: 87 Helwan, Cairo 11421 (Egypt); Ali, Atif M. [Department of Physics, Faculty of Science, King Khalid University, Abha (Saudi Arabia); Al-Sayari, S.A. [Promising Centre for Sensors and Electronic Devices (PCSED), Najran University, P.O. Box: 1988, Najran 11001 (Saudi Arabia); College of Science and Arts-Sharoura, Najran University (Saudi Arabia); Al-Hajry, A. [Department of Physics, College of Science and Arts, Najran University, P.O. Box 1988, Najran 11001 (Saudi Arabia); Promising Centre for Sensors and Electronic Devices (PCSED), Najran University, P.O. Box: 1988, Najran 11001 (Saudi Arabia)

2016-09-11

The photoluminescence (PL) and UV–vis spectral analysis of DAM-ADC (diallyl maleate: DAM, polyallyl diglycol carbonate: ADC) nuclear detector are demonstrated for the first time. The DAM-ADC surfaces were exposed to thin {sup 241}Am disk source that emits alpha particles with activity 333 kBq. It is found that the track density of the irradiated samples remarkably influences the PL characteristics of the DAM-ADC detector. The spectral peak heights and the integrated intensities under the peaks exhibit linear correlations with correlation coefficient R{sup 2}=0.9636 and 0.9806, respectively for different alpha particle fluences ranging from 8.16–40.82×10{sup 7} particles/cm{sup 2}. Additionally, a correlation coefficient R{sup 2}=0.9734 was achieved for the UV–vis spectral analysis. The linear fitting functions, along with the corresponding fitting parameters were evaluated in each case. Both the PL and the UV–vis data of the irradiated DAM-ADC samples showed considerable spectral differences, and hence they would be used to offer sensitive approaches for alpha particle detection.

A Label-Free Photoluminescence Genosensor Using Nanostructured Magnesium Oxide for Cholera Detection

Science.gov (United States)

Patel, Manoj Kumar; Ali, Md. Azahar; Krishnan, Sadagopan; Agrawal, Ved Varun; Al Kheraif, Abdulaziz A.; Fouad, H.; Ansari, Z. A.; Ansari, S. G.; Malhotra, Bansi D.

2015-11-01

Nanomaterial-based photoluminescence (PL) diagnostic devices offer fast and highly sensitive detection of pesticides, DNA, and toxic agents. Here we report a label-free PL genosensor for sensitive detection of Vibrio cholerae that is based on a DNA hybridization strategy utilizing nanostructured magnesium oxide (nMgO; size >30 nm) particles. The morphology and size of the synthesized nMgO were determined by transmission electron microscopic (TEM) studies. The probe DNA (pDNA) was conjugated with nMgO and characterized by X-ray photoelectron and Fourier transform infrared spectroscopic techniques. The target complementary genomic DNA (cDNA) isolated from clinical samples of V. cholerae was subjected to DNA hybridization studies using the pDNA-nMgO complex and detection of the cDNA was accomplished by measuring changes in PL intensity. The PL peak intensity measured at 700 nm (red emission) increases with the increase in cDNA concentration. A linear range of response in the developed PL genosensor was observed from 100 to 500 ng/μL with a sensitivity of 1.306 emi/ng, detection limit of 3.133 ng/μL and a regression coefficient (R2) of 0.987. These results show that this ultrasensitive PL genosensor has the potential for applications in the clinical diagnosis of cholera.

Photoluminescence investigation of type-II GaSb/GaAs quantum dots grown by liquid phase epitaxy

Science.gov (United States)

Wang, Yang; Hu, Shuhong; Xie, Hao; Lin, Hongyu; lu, Hongbo; Wang, Chao; Sun, Yan; Dai, Ning

2018-06-01

GaSb quantum dots (QDs) with an areal density of ∼1 × 1010 cm-2 are successfully grown by the modified (rapid slider) liquid phase epitaxy technique. The morphology of the QDs has been investigated by scanning electron microscope (SEM) and atom force microscope (AFM). The power-dependence and temperature-dependence photoluminescence (PL) spectra have been studied. The bright room-temperature PL suggests a good luminescence quality of GaSb QDs/GaAs matrix system. The type-II alignment of the GaSb QDs/GaAs matrix system is verified by the blue-shift of the QDs peak with the increase of excitation power. From the temperature-dependence PL spectra, the activation energy of QDs is determined to be 111 meV.

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Science.gov (United States)

Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

2017-10-01

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

Probing the exciton density of states in semiconductor nanocrystals using integrated photoluminescence spectroscopy

CERN Document Server

Filonovich, S A; Vasilevskiy, M I; Rolo, A G; Gomes, M J M; Artemiev, M V; Talapin, D V; Rogach, A L

2002-01-01

We present the results of a comparative analysis of the absorption and photoluminescence excitation (PLE) spectra vs. integrated photoluminescence (IPL) measured as a function of the excitation wavelength for a number of samples containing II-VI semiconductor nanocrystals (NCs) produced by different techniques. The structure of the absorption and PL spectra due to excitons confined in NCs and difficulties with the correct interpretation of the transmittance and PLE results are discussed. It is shown that, compared to the conventional PLE, the IPL intensity plotted against the excitation wavelength (IPLE spectra) reproduce better the structure of the absorption spectra. Therefore, IPLE spectroscopy can be successfully used for probing the quantized electron-hole (e-h) transitions in semiconductor nanocrystals. (author)

Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

International Nuclear Information System (INIS)

Sun, Shibin; Chang, Xueting; Li, Zhenjiang

2010-01-01

Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 o C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

Thermal-treatment effect on the photoluminescence and gas-sensing properties of tungsten oxide nanowires

Energy Technology Data Exchange (ETDEWEB)

Sun, Shibin [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China); Chang, Xueting [Institute of Materials Science and Engineering, Ocean University of China, Qingdao 266100, Shandong (China); Li, Zhenjiang, E-mail: zjli126@126.com [College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao 266061, Shandong (China)

2010-09-15

Single-crystalline non-stoichiometric tungsten oxide nanowires were initially prepared using a simple solvothermal method. High resolution transmission electron microscopy (HRTEM) investigations indicate that the tungsten oxide nanowires exhibit various crystal defects, including stacking faults, dislocations, and vacancies. A possible defect-induced mechanism was proposed to account for the temperature-dependent morphological evolution of the tungsten oxide nanowires under thermal processing. Due to the high specific surface areas and non-stoichiometric crystal structure, the original tungsten oxide nanowires were highly sensitive to ppm level ethanol at room temperature. Thermal treatment under dry air condition was found to deteriorate the selectivity of room-temperature tungsten oxide sensors, and 400 {sup o}C may be considered as the top temperature limit in sensor applications for the solvothermally-prepared nanowires. The photoluminescence (PL) characteristics of tungsten oxide nanowires were also strongly influenced by thermal treatment.

PL and EL characterizations of ZnO:Eu3+, Li+ films derived by sol-gel process

International Nuclear Information System (INIS)

Xue Daoqi; Zhang Junying; Yang Chun; Wang Tianmin

2008-01-01

ZnO:Eu 3+ , Li + films prepared by the dip-coating method were characterized by photoluminescence (PL) and electroluminescence (EL). When the ZnO:Eu 3+ , Li + films were excited using UV light with energy corresponding to the band-to-band excitation of the host matrix, the PL spectra showed emissions from both ZnO and Eu 3+ ions, while their EL spectra showed emissions only from Eu 3+ ions, and no emission from ZnO could be detected. It is found that the EL emission intensity B is dependent on the applied voltage, B=B o exp(-bV -1/2 ). With increasing frequency, the EL intensity dramatically increases at lower frequencies ( 1000 Hz)

Temperature- and excitation intensity-dependent photoluminescence in TlInSeS single crystals

CERN Document Server

Gasanly, N M; Yuksek, N S

2002-01-01

Photoluminescence (PL) spectra of TlInSeS layered single crystals were investigated in the wavelength region 460-800 nm and in the temperature range 10-65 K. We observed one wide PL band centred at 584 nm (2.122 eV) at T=10 K and an excitation intensity of 7.5 W cm sup - sup 2. We have also studied the variation of the PL intensity versus excitation laser intensity in the range from 0.023 to 7.5 W cm sup - sup 2. The red shift of this band with increasing temperature and blue shift with increasing laser excitation intensity was observed. The PL was found to be due to radiative transitions from the moderately deep donor level located at 0.243 eV below the bottom of the conduction band to the shallow acceptor level at 0.023 eV located above the top of the valence band. The proposed energy-level diagram permits us to interpret the recombination processes in TlInSeS layered single crystals.

Temperature- and excitation intensity-dependent photoluminescence in TlInSeS single crystals

International Nuclear Information System (INIS)

Gasanly, N M; Aydinli, A; Yuksek, N S

2002-01-01

Photoluminescence (PL) spectra of TlInSeS layered single crystals were investigated in the wavelength region 460-800 nm and in the temperature range 10-65 K. We observed one wide PL band centred at 584 nm (2.122 eV) at T=10 K and an excitation intensity of 7.5 W cm -2 . We have also studied the variation of the PL intensity versus excitation laser intensity in the range from 0.023 to 7.5 W cm -2 . The red shift of this band with increasing temperature and blue shift with increasing laser excitation intensity was observed. The PL was found to be due to radiative transitions from the moderately deep donor level located at 0.243 eV below the bottom of the conduction band to the shallow acceptor level at 0.023 eV located above the top of the valence band. The proposed energy-level diagram permits us to interpret the recombination processes in TlInSeS layered single crystals

Photoluminescence of crystalline and disordered BTO:Mn powder: Experimental and theoretical modeling

International Nuclear Information System (INIS)

Gurgel, M.F.C.; Espinosa, J.W.M.; Campos, A.B.; Rosa, I.L.V.; Joya, M.R.; Souza, A.G.; Zaghete, M.A.; Pizani, P.S.; Leite, E.R.; Varela, J.A.; Longo, E.

2007-01-01

Disordered and crystalline Mn-doped BaTiO 3 (BTO:Mn) powders were synthesized by the polymeric precursor method. After heat treatment, the nature of visible photoluminescence (PL) at room temperature in amorphous BTO:Mn was discussed, considering results of experimental and theoretical studies. X-ray diffraction (XRD), PL, and UV-vis were used to characterize this material. Rietveld refinement of the BTO:Mn from XRD data was used to built two models, which represent the crystalline BTO:Mn (BTO:Mn c ) and disordered BTO:Mn (BTO:Mn d ) structures. Theses models were analyzed by the periodic ab initio quantum mechanical calculations using the CRYSTAL98 package within the framework of density functional theory at the B3LYP level. The experimental and theoretical results indicated that PL is related with the degree of disorder in the BTO:Mn powders and also suggests the presence of localized states in the disordered structure

Photoluminescence and structural studies of Tb and Eu implanted at high temperatures into SiO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Bregolin, F.L. [Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Av. Bento Goncalves 9500, 91501-970, Porto Alegre-RS (Brazil); Sias, U.S., E-mail: uilson.sias@gmail.com [Instituto Federal Sul-rio-grandense, Campus Pelotas, Praca 20 de Setembro 455, 96015-360, Pelotas-RS (Brazil); Behar, M. [Instituto de Fisica, Universidade Federal do Rio Grande do Sul, Av. Bento Goncalves 9500, 91501-970, Porto Alegre-RS (Brazil)

2013-03-15

The present work deals with the photoluminescence (PL) emitted from Eu and Tb ions implanted at room temperature (RT) up to 350 Degree-Sign C in a SiO{sub 2} matrix, followed by a further anneal process. The ions were implanted with energy of 100 keV and a fluence of 3 Multiplication-Sign 10{sup 15} ions/cm Superscript-Two . Further anneals were performed in atmospheres of N{sub 2} or O{sub 2} with temperatures ranging from 500 up to 800 Degree-Sign C. PL measurements were performed at RT and structural measurements were done via transmission electron microscopy (TEM). In addition, the Rutherford backscattering technique (RBS) was used to investigate the corresponding ion depth profiles. For Tb, the optimal implantation temperature was 200 Degree-Sign C, and the anneal one was of 500 Degree-Sign C. Under these conditions, the PL yield of the sharp band centered at 550 nm was significatively higher than the one obtained with RT implants. The PL spectra corresponding to the Eu ions show two bands, one narrow centered around 650 nm and a second broad one in the blue-green region. The implantation temperature plays a small influence on the PL shape and yield. However, the annealing atmosphere has a strong influence on it. Samples annealed in N{sub 2} present a broad PL band, ranging from 370 up to 840 nm. On the other hand, the O{sub 2} anneal conserves the original as-implanted spectrum, that is: a broad PL band in the blue-green region together with sharp PL band in the red one. For both ions, Tb and Eu, the TEM analyses indicate the formation of nanoclusters in the hot as-implanted samples. - Highlights: Black-Right-Pointing-Pointer Eu and Tb nanoparticles were obtained by hot ion implantation into SiO{sub 2} matrix. Black-Right-Pointing-Pointer TEM results indicate the formation of nanoclusters in the hot as-implanted samples. Black-Right-Pointing-Pointer Samples annealed in N{sub 2} presented a broad PL band (from 370 up to 840 nm). Black-Right-Pointing-Pointer O

Effects of precursors on the crystal structure and photoluminescence of CdS nanocrystalline

International Nuclear Information System (INIS)

Fu Zuoling; Zhou Shihong; Shi Jinsheng; Zhang Siyuan

2005-01-01

A series of cadmium sulfide (CdS) nanocrystalline were synthesized by precipitation from a mixture of aqueous solutions of cadmium salts and sulfur salts without adding any surface-termination agent. Their crystal structures and particle sizes were determined by X-ray diffraction (XRD). The CdS nanocrystalline precipitated from different precursors exhibited three cases: cubic phase, hexagonal phase and a hybrid of cubic and hexagonal phases. The photoluminescence (PL) of cadmium salt precursors and CdS nanocrystalline is also analyzed. Similar spectral band structure of cadmium salt precursors and CdS nanocrystalline is found. The PL of 3.4, 2.4 and 2.0 nm sized CdS nanocrystalline with the same crystal structure indicated quantum confinement effect

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kawazu, T., E-mail: KAWAZU.Takuya@nims.go.jp; Noda, T.; Sakuma, Y. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)

2016-04-15

We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy. We prepared two QD samples annealed at slightly different temperatures (380 {sup o}C and 400 {sup o}C) and carried out PL measurements. The 20 {sup o}C increase of the annealing temperature leads to (1) about 140 and 60 times stronger wetting layer (WL) luminescence at low and high P, (2) about 45% large energy shift of QD luminescence with P, and (3) the different P dependence of the PL intensity ratio between the QD and the WL. These differences of the PL characteristics are explained by the effects of the WL.

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

KAUST Repository

Marcinkevičius, S.; Gelžinytė, K.; Zhao, Y.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

2014-01-01

© 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs

Defect states in microcrystalline silicon probed by photoluminescence spectroscopy

International Nuclear Information System (INIS)

Merdzhanova, T.; Carius, R.; Klein, S.; Finger, F.; Dimova-Malinovska, D.

2006-01-01

Photoluminescence (PL) spectroscopy is used to investigate defects and localized band tail states within the band gap of hydrogenated microcrystalline silicon (μc-Si:H) prepared by plasma enhanced chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD). The effect of the substrate temperature (T S ), which influences mainly the defect density, and silane concentration (SC), as Key parameter to control the microstructure of the material were varied. In high quality μc-Si:H films (T S = 185-200 deg. C) a PL band ('μc'-Si-band) is observed at ∼ 0.9-1.05 eV which is attributed to radiative recombination via localized band tail states in the microcrystalline phase. In μc-Si:H films prepared at higher T S (> 300 deg. C), an additional PL band at ∼ 0.7 eV with a width of ∼ 0.17 eV is found for both PECVD and HWCVD material. This band maintains its position at ∼ 0.7 eV with increasing SC in contrast to the observed shift of the 'μc'-Si-band to higher energies. Studies of the temperature dependences of the PL peak energy and intensity for the two bands show: (i) the PL band at 0.7 eV remains unaffected upon increasing temperature, while the 'μc'-Si-band shifts to lower energies (ii) a much weaker quenching for the 0.7 eV band compared to the 'μc'-Si-band. It was also found that the PL band at 0.7 eV exhibits a slightly stronger temperature dependence of the PL intensity compared to 'defect' band at 0.9 eV in a-Si:H suggesting similar recombination transition via deeper trap states. Due to a similar PL properties of the emission band previously observed in Czochralski-grown silicon (Cz-Si), the 0.7 eV band in μc-Si:H is assigned tentatively to defect-related transitions in the crystalline phase

Photoluminescence intermittency of semiconductor quantum dots in dielectric environments

Energy Technology Data Exchange (ETDEWEB)

Isaac, A.

2006-08-11

The experimental studies presented in this thesis deal with the photoluminescence intermittency of semiconductor quantum dots in different dielectric environments. Detailed analysis of intermittency statistics from single capped CdSe/ZnS, uncapped CdSe and water dispersed CdSe/ZnS QDs in different matrices provide experimental evidence for the model of photoionization with a charge ejected into the surrounding matrix as the source of PL intermittency phenomenon. We propose a self-trapping model to explain the increase of dark state lifetimes with the dielectric constant of the matrix. (orig.)

Photoluminescence Enhancement of Poly(3-methylthiophene Nanowires upon Length Variable DNA Hybridization

Directory of Open Access Journals (Sweden)

Jingyuan Huang

2018-01-01

Full Text Available The use of low-dimensional inorganic or organic nanomaterials has advantages for DNA and protein recognition due to their sensitivity, accuracy, and physical size matching. In this research, poly(3-methylthiophene (P3MT nanowires (NWs are electrochemically prepared with dopant followed by functionalization with probe DNA (pDNA sequence through electrostatic interaction. Various lengths of pDNA sequences (10-, 20- and 30-mer are conjugated to the P3MT NWs respectively followed with hybridization with their complementary target DNA (tDNA sequences. The nanoscale photoluminescence (PL properties of the P3MT NWs are studied throughout the whole process at solid state. In addition, the correlation between the PL enhancement and the double helix DNA with various lengths is demonstrated.

Composition-dependent photoluminescence properties of CuInS_2/ZnS core/shell quantum dots

International Nuclear Information System (INIS)

Hua, Jie; Du, Yuwei; Wei, Qi; Yuan, Xi; Wang, Jin; Zhao, Jialong; Li, Haibo

2016-01-01

CuInS_2/ZnS (CIS/ZnS) core/shell quantum dots (QDs) with various Cu/In ratios were synthesized using the hot-injection method, and their photoluminescence (PL) properties were investigated by measuring steady-state and time-resolved PL spectroscopy. The emission peak of the CIS/ZnS QDs were tuned from 680 to 580 nm by decreasing the Cu/In precursor ratio from 1/1 to 1/9. As the Cu/In ratio decreases, the PL lifetimes and PL quantum yields (QYs) of CIS/ZnS core/shell QDs increased firstly and then decreased. Two dominant radiative recombination processes were postulated to analyze composition-dependent PL properties, including the recombination from a quantized conduction band to deep defects state and donor-acceptor pair (DAP) recombination. The decrease of PL efficiency resulted from high density defects and traps, which formed at the interface between CIS core and ZnS shell due to the large off-stoichiometry composition. The PL intensity and peak energy for CIS/ZnS core/shell QDs as a function of temperature were also provided. The thermal quenching further confirmed that the PL emission of CIS/ZnS QDs did not come from the recombination of excitons but from the recombination of many kinds of intrinsic defects inside the QDs as emission centers.

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

OpenAIRE

Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

2011-01-01

Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

Changes of photoluminescence of electron beam irradiated self-assembled InAs/GaAs quantum dots

Science.gov (United States)

Maliya; Aierken, Abuduwayiti; Li, Yudong; Zhou, Dong; Zhao, Xiaofan; Guo, Qi; Liu, Chaoming

2018-03-01

We investigate the effects of 1.0MeV electron beam irradiation on the photoluminescence of self-assembled InAs/GaAs quantum dots. After irradiation doses up to 1×1016e-/cm2 , photoluminescence of all samples was degraded dramatically and some additional radiation-induced changes in photo-carrier recombination from QDs, which include a slight increase in PL emission with low electron doses under different photo-injection condition in two samples, are also noticed. Different energy shift was observed in two samples with different Quantum Dot sizes. We attribute this remarkable phenomenon to combination of stress relaxation induced red-shift and In-Ga intermixing caused blue-shift.

Highly stable colloidal TiO{sub 2} nanocrystals with strong violet-blue emission

Energy Technology Data Exchange (ETDEWEB)

Ghamsari, Morteza Sasani, E-mail: msghamsari@yahoo.com [Laser & Optics Research School, NSTRI, 11155-3486 Tehran (Iran, Islamic Republic of); Gaeeni, Mohammad Reza [Laser & Optics Research School, NSTRI, 11155-3486 Tehran (Iran, Islamic Republic of); Han, Wooje; Park, Hyung-Ho [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

2016-10-15

Improved sol–gel method has been applied to prepare highly stable colloidal TiO{sub 2} nanocrystals. The synthesized titania nanocrystals exhibit strong emission in the violet-blue wavelength region. Very long evolution time was obtained by preventing the sol to gel conversion with reflux process. FTIR, XRD, UV–vis absorption, photoluminescence and high resolution transmission electron microscope (HRTEM) were used to study the optical properties, crystalline phase, morphology, shape and size of prepared TiO{sub 2} colloidal nanocrystals. HRTEM showed that the diameter of TiO{sub 2} colloidal nanocrystals is about 5 nm. Although the PL spectra show similar spectral features upon excitation wavelengths at 280, 300 and 350 nm, but their emission intensities are significantly different from each other. Photoluminescence quantum yield for TiO{sub 2} colloidal nanocrystals is estimated to be 49% with 280 nm excitation wavelength which is in agreement and better than reported before. Obtained results confirm that the prepared colloidal TiO{sub 2} sample has enough potential for optoelectronics applications.

Defect study of Cu2ZnSn(SxSe1-x)4 thin film absorbers using photoluminescence and modulated surface photovoltage spectroscopy

Science.gov (United States)

Lin, Xianzhong; Ennaoui, Ahmed; Levcenko, Sergiu; Dittrich, Thomas; Kavalakkatt, Jaison; Kretzschmar, Steffen; Unold, Thomas; Lux-Steiner, Martha Ch.

2015-01-01

Defect states in Cu2ZnSn(SxSe1-x)4 thin films with x = 0.28, 0.36, and 1 were studied by combining photoluminescence (PL) and modulated surface photovoltage (SPV) spectroscopy. A single broad band emission in the PL spectra was observed and can be related to quasi-donor-acceptor pair transitions. The analysis of the temperature dependent quenching of the PL band (x = 0.28, 0.36, and 1) and SPV (x = 0.28) signals resulted in activation energies below 150 meV for PL and about 90 and 300 meV for SPV. Possible intrinsic point defects that might be associated with these observed activation energies are discussed.

Kinetic energy dependence of carrier diffusion in a GaAs epilayer studied by wavelength selective PL imaging

Energy Technology Data Exchange (ETDEWEB)

Zhang, S. [University of North Carolina at Charlotte, Charlotte, NC 28223 (United States); Providence High School, Charlotte, NC 28270 (United States); Su, L.Q.; Kon, J. [University of North Carolina at Charlotte, Charlotte, NC 28223 (United States); Gfroerer, T. [Davidson College, Davidson, NC 28035 (United States); Wanlass, M.W. [National Renewable Energy Laboratory, Golden, CO 80401 (United States); Zhang, Y., E-mail: yong.zhang@uncc.edu [University of North Carolina at Charlotte, Charlotte, NC 28223 (United States)

2017-05-15

Photoluminescence (PL) imaging has been shown to be an efficient technique for investigating carrier diffusion in semiconductors. In the past, the measurement was typically carried out by measuring at one wavelength (e.g., at the band gap) or simply the whole emission band. At room temperature in a semiconductor like GaAs, the band-to-band PL emission may occur in a spectral range over 200 meV, vastly exceeding the average thermal energy of about 26 meV. To investigate the potential dependence of the carrier diffusion on the carrier kinetic energy, we performed wavelength selective PL imaging on a GaAs double hetero-structure in a spectral range from about 70 meV above to 50 meV below the bandgap, extracting the carrier diffusion lengths at different PL wavelengths by fitting the imaging data to a theoretical model. The results clearly show that the locally generated carriers of different kinetic energies mostly diffuse together, maintaining the same thermal distribution throughout the diffusion process. Potential effects related to carrier density, self-absorption, lateral wave-guiding, and local heating are also discussed.

Microcrystalline silicon films and solar cells investigatet by photoluminescence spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Merdzhanova, T.

2005-07-01

A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ({mu}c-Si:H) films with structural composition changing from highly crystalline to predominantly amorphous is presented. The samples were prepared by PECVD and HWCVD with different silane concentration in hydrogen (SC). By using photoluminescence in combination with Raman spectroscopy the relationship between electronic properties and the microstructure of the material is studied. The PL spectra of {mu}c-Si:H reveal a rather broad ({proportional_to}0.13 eV) featureless band at about 1 eV ('{mu}c'-Si-band). In mixed phase material of crystalline and amorphous regions, a band at about 1.3 eV with halfwidth of about 0.3 eV is found in addition to '{mu}c'-Si-band, which is attributed to the amorphous phase ('a'-Si-band). Similarly to amorphous silicon, the '{mu}c'-Si-band is assigned to recombination between electrons and holes in band tail states. An additional PL band centred at about 0.7 eV with halfwidth slightly broader than the '{mu}c'-Si-band is observed only for films prepared at high substrate temperature and it is preliminarily assigned to defect-related transitions as in polycrystalline silicon. With decreasing crystalline volume fraction, the '{mu}c'-Si-band shifts continuously to higher energies for all {mu}c-Si:H films but the linewidth of the PL spectra is almost unaffected. This is valid for all deposition conditions investigated. The results are interpreted, assuming decrease of the density of band tail states with decreasing crystalline volume fraction. A simple model is proposed to simulate PL spectra and V{sub oc} in {mu}c-Si:H solar cells as a function of temperature, based on carrier distributions in quasi-equilibrium conditions. In the model is assumed symmetric density of states distributions for electrons and holes in the conduction and the valence band tail states. The best agreement between

Comparative PL study of individual ZnO nanorods, grown by APMOCVD and CBD techniques

Energy Technology Data Exchange (ETDEWEB)

Khranovskyy, Volodymyr, E-mail: volkh@ifm.liu.se [Department of Physics, Chemistry and Biology (IFM), Linkoeping University, 58183 Linkoeping (Sweden); Yakimova, Rositza; Karlsson, Fredrik; Syed, Abdul S.; Holtz, Per-Olof [Department of Physics, Chemistry and Biology (IFM), Linkoeping University, 58183 Linkoeping (Sweden); Nigussa Urgessa, Zelalem [Department of Physics, P.O Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Samuel Oluwafemi, Oluwatobi [Department of Chemistry and Chemical Technology, Walter Sisulu University, Mthatha Campus, Private Bag XI 5117 (South Africa); Reinhardt Botha, Johannes [Department of Physics, P.O Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

2012-05-15

The photoluminescence properties of individual ZnO nanorods, grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCV) and chemical bath deposition (CBD) are investigated by means of temperature dependent micro-PL. It was found that the low temperature PL spectra are driven by neutral donor bound exciton emission D{sup 0}X, peaked at 3.359 and 3.363 eV for APMOCVD and CBD ZnO nanorods, respectively. The temperature increase causes a red energy shift of the peaks and enhancement of the free excitonic emission (FX). The FX was found to dominate after 150 K for both samples. It was observed that while APMOCVD ZnO nanorods possess a constant low signal of visible deep level emission with temperature, the ZnO nanorods grown by CBD revealed the thermal activation of deep level emission (DLE) after 130 K. The resulting room temperature DLE was a wide band located at 420-550 nm. The PL properties of individual ZnO nanorods can be of importance for their forthcoming application in future optoelectronics and photonics.

Comparative PL study of individual ZnO nanorods, grown by APMOCVD and CBD techniques

International Nuclear Information System (INIS)

Khranovskyy, Volodymyr; Yakimova, Rositza; Karlsson, Fredrik; Syed, Abdul S.; Holtz, Per-Olof; Nigussa Urgessa, Zelalem; Samuel Oluwafemi, Oluwatobi; Reinhardt Botha, Johannes

2012-01-01

The photoluminescence properties of individual ZnO nanorods, grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCV) and chemical bath deposition (CBD) are investigated by means of temperature dependent micro-PL. It was found that the low temperature PL spectra are driven by neutral donor bound exciton emission D 0 X, peaked at 3.359 and 3.363 eV for APMOCVD and CBD ZnO nanorods, respectively. The temperature increase causes a red energy shift of the peaks and enhancement of the free excitonic emission (FX). The FX was found to dominate after 150 K for both samples. It was observed that while APMOCVD ZnO nanorods possess a constant low signal of visible deep level emission with temperature, the ZnO nanorods grown by CBD revealed the thermal activation of deep level emission (DLE) after 130 K. The resulting room temperature DLE was a wide band located at 420–550 nm. The PL properties of individual ZnO nanorods can be of importance for their forthcoming application in future optoelectronics and photonics.

Polarization-selective three-photon absorption and subsequent photoluminescence in CsPbBr3 single crystal at room temperature

Science.gov (United States)

Clark, D. J.; Stoumpos, C. C.; Saouma, F. O.; Kanatzidis, M. G.; Jang, J. I.

2016-05-01

We report on highly polarization-selective three-photon absorption (3PA) in a Bridgman-grown single crystal of CsPbBr3 oriented along the (112) direction, which is an inorganic counterpart to emerging organic-inorganic hybrid halide perovskites for solar-cell and optoelectronic applications. The crystal exhibits strong photoluminescence (PL) at room temperature as a direct consequence of 3PA of fundamental radiation. Interestingly, 3PA disappears when the input polarization is parallel to the (-110 ) direction. This 3PA effect is strongest when orthogonal to (-110 ) and the corresponding 3PA coefficient was measured to be γ =0.14 ±0.03 cm3/GW2 under picosecond-pulse excitation at the fundamental wavelength of λ =1200 nm. The laser-induced damage threshold was also determined to be about 20 GW/cm2 at the same wavelength. Based on relative PL intensities upon λ tuning over the entire 3PA range (1100 -1700 nm), we determined the nonlinear optical dispersion of the 3PA coefficient for CsPbBr3, which is consistent with a theoretical prediction. Experimentally observed significant polarization dependence of γ was explained by relevant selection rules. The perovskite is potentially important for nonlinear optical applications owing to its highly efficient 3PA-induced PL response with a sharp on/off ratio by active polarization control.

Photoluminescence of colloidal CdSe nano-tetrapods and quantum dots in oxygenic and oxygen-free environments

Energy Technology Data Exchange (ETDEWEB)

Zhao, Lijuan [Donghua University, Applied Physics Department, Shanghai (China); Hong Kong University of Science and Technology, Physics Department and the Institute of Nano-Science and Technology, Hong Kong (China); Pang, Qi; Ge, Weikun; Wang, Jiannong [Hong Kong University of Science and Technology, Physics Department and the Institute of Nano-Science and Technology, Hong Kong (China); Yang, Shihe [Hong Kong University of Science and Technology, Chemistry Department and the Institute of Nano-Science and Technology, Hong Kong (China)

2011-05-15

The effects of oxygenic versus oxygen-free environments on colloidal CdSe nano-tetrapods and quantum dots (QDs) were studied using both continuous and time-resolved photoluminescence (PL) measurements. The decays of PL intensities for tetrapods and QDs in oxygen-free solution (chloroform) and in air (on silicon) can be well fitted by a bi-exponential function. Based on the emission-energy dependence of carrier lifetimes and the amplitude ratio of the fast-decay component to the slow-decay component, the fast and slow PL decays of CdSe nanocrystals are attributed to the recombination of delocalized carriers in the core states and localized carriers in the surface states, respectively. The PL intensities of CdSe nano-tetrapods and QDs were found to be five times and an order of magnitude higher in air than in vacuum, respectively, which is explained by the passivation of surface defects by the polar gas (oxygen) absorption. The lower enhancement in PL intensities of CdSe nano-tetrapods is explained by the special morphology of the tetrapods. (orig.)

Effect of temperature on structural, optical and photoluminescence studies on ZnO nanoparticles synthesized by the standard co-precipitation method

Energy Technology Data Exchange (ETDEWEB)

Raj, K. Pradeev [Research and Development Centre, Bharathiar University, Coimbatore 641046, Tamil Nadu (India); Department of Physics, CSI College of Engineering, Ooty 643215, Tamil Nadu (India); Sadayandi, K. [Department of Physics, Alagappa Government Arts College, Karaikudi, Sivagangai 630003, Tamil Nadu (India)

2016-04-15

This present study brings the synthesis of Zinc oxide (ZnO) nanoparticles (NPs) by the standard aqueous chemical route technique. The impact of calcination temperature on the extent of the ZnO nanoparticles is studied for its lattice constraints. X-ray diffraction (XRD) affirms the hexagonal Wurtzite structure of the synthesized ZnO nanoparticles. From the Williamson–Hall (W–H) plot, positive slope is inferred for pure and calcined ZnO NPs and confirms the presence of tensile strain. From the SEM images it is found that the crystallinity enhances with calcination temperature. From the optical studies, it is found that the band gap energy decreases with improved transmission. The Photoluminescence (PL) spectrum reveals the UV emission is strong near the band-edge. The emission peaks around 400–480 nm result in blue emission and the peaks around 540–560 nm result in green emission. Decrease in band gap energy and enhancement in PL studies reveal the red shift of the calcined ZnO exhibiting solid quantum confinements.

Excitation intensity dependent photoluminescence of annealed two-dimensional MoS{sub 2} grown by chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Kaplan, D.; Swaminathan, V. [U.S. Army RDECOM-ARDEC, Fuze Precision Armaments and Technology Directorate, Picatinny Arsenal, New Jersey 07806 (United States); Mills, K. [U.S. Army RDECOM-ARDEC, Energetics, Warheads and Manufacturing Technology Directorate, Picatinny Arsenal, New Jersey 07806 (United States); Lee, J. [Agency for Defense Development, Yuseong, P.O. Box 35, Daejeon, 305-600 (Korea, Republic of); Torrel, S. [Department of Materials Science and Engineering, Piscataway, Rutgers, The State University of New Jersey, New Jersey 08854 (United States)

2016-06-07

Here, we present detailed results of Raman and photoluminescence (PL) characterization of monolayers of MoS{sub 2} grown by chemical vapor deposition (CVD) on SiO{sub 2}/Si substrates after thermal annealing at 150 °C, 200 °C, and 250 °C in an argon atmosphere. In comparison to the as-grown monolayers, annealing in the temperature range of 150–250 °C brings about significant changes in the band edge luminescence. It is observed that annealing at 150 °C gives rise to a 100-fold increase in the PL intensity and produces a strong band at 1.852 eV attributed to a free-to-bound transition that dominates over the band edge excitonic luminescence. This band disappears for the higher annealing temperatures. The improvement in PL after the 200 °C anneal is reduced in comparison to that obtained after the 150 °C anneal; this is suggested to arise from a decrease in the non-radiative lifetime caused by the creation of sulfur di-vacancies. Annealing at 250 °C degrades the PL in comparison to the as-grown sample because of the onset of disorder/decomposition of the sample. It is clear that the PL features of the CVD-grown MoS{sub 2} monolayer are profoundly affected by thermal annealing in Ar atmosphere. However, further detailed studies are needed to identify, unambiguously, the role of native defects and/or adsorbed species in defining the radiative channels in annealed samples so that the beneficial effect of improvement in the optical efficiency of the MoS{sub 2} monolayers can be leveraged for various device applications.

Synthesis, photoluminescence and magnetic properties of barium vanadate nanoflowers

International Nuclear Information System (INIS)

Xu, Jing; Hu, Chenguo; Xi, Yi; Peng, Chen; Wan, Buyong; He, Xiaoshan

2011-01-01

Graphical abstract: The flower-shaped barium vanadate was obtained for the first time. The photoluminescence and magnetic properties of the barium vanadate nanoflowers were investigated at room temperature. Research highlights: → In the paper, the flower-shaped barium vanadate were obtained for the first time. The CHM method used here is new and simple for preparation of barium vanadate. → The photoluminescence and magnetic properties of the barium vanadate nanoflowers were investigated at room temperature. The strong bluish-green emission was observed. → The ferromagnetic behavior of the barium vanadate nanoflowers was found with saturation magnetization of about 83.50 x 10 -3 emu/g, coercivity of 18.89 Oe and remnant magnetization of 4.63 x 10 -3 emu/g. → The mechanisms of PL and magnetic property of barium vanadate nanoflowers have been discussed. -- Abstract: The flower-shaped barium vanadate has been obtained by the composite hydroxide mediated (CHM) method from V 2 O 5 and BaCl 2 at 200 o C for 13 h. XRD and XPS spectrum of the as-synthesized sample indicate it is hexagonal Ba 3 V 2 O 8 with small amount of Ba 3 VO 4.8 coexistence. Scan electron microscope and transmission electron microscope display that the flower-shaped crystals are composed of nanosheets with thickness of ∼20 nm. The UV-visible spectrum shows that the barium vanadate sample has two optical gaps (3.85 eV and 3.12 eV). Photoluminescence spectrum of the barium vanadate flowers exhibits a visible light emission centered at 492 and 525 nm which might be attributed to VO 4 tetrahedron with T d symmetry in Ba 3 V 2 O 8 . The ferromagnetic behavior of the barium vanadate nanoflowers has been found with saturation magnetization of about 83.50 x 10 -3 emu/g, coercivity of 18.89 Oe and remnant magnetization of 4.63 x 10 -3 emu/g, which is mainly due to the presence of a non-orthovanadate phase with spin S = 1/2.

Structural study, photoluminescence, and photocatalytic activity of semiconducting BaZrO{sub 3}:Bi nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Borja-Urby, R. [Grupo de Espectroscopia de Materiales Avanzados y Nanoestructurados (EMANA), Centro de Investigaciones en Optica A.C., Leon, Gto 37150 (Mexico); Diaz-Torres, L.A., E-mail: ditlacio@cio.mx [Grupo de Espectroscopia de Materiales Avanzados y Nanoestructurados (EMANA), Centro de Investigaciones en Optica A.C., Leon, Gto 37150 (Mexico); Salas, P. [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, A.P. 1-1010, Queretaro 76000 (Mexico); Moctezuma, E. [Facultad de Ciencias Quimicas, Universidad Autonoma de San Luis Potosi, Av. Manuel Nava 6, San Luis Potosi, S.L.P., Mexico 78290 (Mexico); Vega, M. [Centro de Geociencias-UNAM, A.P. 1-1010, Queretaro 76000 (Mexico); Angeles-Chavez, C. [Instituto Mexicano del Petroleo, Ciudad de Mexico, D.F. 07730 (Mexico)

2011-10-25

Wide band gap nanocrystalline bismuth doped barium zirconate is synthesized by a facile hydrothermal method at 100 deg. C. The obtained cubic perovskites are characterized by powder X-ray diffraction (XRD), UV-VIS diffuse reflectance spectroscopy, photoluminescence (PL) spectroscopy, and photocatalytic activity. The estimated band gap in the 2.4-4.9 eV range, depending on Bi concentration, suggests nanocrystalline BaZrO{sub 3}:Bi as a useful visible-light activated photocatalyst under excitation wavelengths <800 nm. Displacement of main XRD pattern peaks suggest that bismuth ion mostly substitutes into Zr{sup 4+} sites within the BaZrO{sub 3} host lattice. It is found that BaZrO{sub 3}:Bi decomposes methylene blue (MB) under both UV and visible light irradiation. The photocatalyst efficiency depends strongly on Bi content and induced defects.

Preparation and Photoluminescence of ZnO Comb-Like Structure and Nanorod Arrays

Science.gov (United States)

Yin, Song; Chen, Yi-qing; Su, Yong; Zhou, Qing-tao

2007-06-01

A large quantity of Zinc oxide (ZnO) comb-like structure and high-density well-aligned ZnO nanorod arrays were prepared on silicon substrate via thermal evaporation process without any catalyst. The morphology, growth mechanism, and optical properties of the both structures were investigated using XRD, SEM, TEM and PL. The resulting comb-teeth, with a diameter about 20 nm, growing along the [0001] direction have a well-defined epitaxial relationship with the comb ribbon. The ZnO nanorod arrays have a diameter about 200 nm and length up to several micrometers growing approximately vertical to the Si substrate. A ZnO film was obtained before the nanorods growth. A growth model is proposed for interpreting the growth mechanism of comb-like zigzag-notch nanostructure. Room temperature photoluminescence measurements under excitation wavelength of 325 nm showed that the ZnO comb-like nanostructure has a weak UV emission at around 384 nm and a strong green emission around 491 nm, which correspond to a near band-edge transition and the singly ionized oxygen vacancy, respectively. In contrast, a strong and sharp UV peak and a weak green peak was obtained from the ZnO nanorod arrays.

3PL, 4PL and insourcing logistics

Directory of Open Access Journals (Sweden)

Mauro Vivaldini

2015-12-01

Full Text Available Logistics services have evolved and changed over time, especially in the hiring of them according to the concepts of 3PL (third party logistics, 4PL (fourth party logistics or insourcing logistics. 3PL service is a consolidated business, 4PL is an option for outsourcing logistics and has already been adopted by some organizations, and insourcing logistics suggests the return of these activities being internalized by companies, which is still a relatively unexplored subject in logistics literature. Analyzing these themes in the literature, this study updates the view on them and proposes a conceptual framework that classifies the different models of logistics services, showing the different options that can be adopted to help the company decide how to run their logistics services.

Photoluminescence and reflectivity studies of high energy light ions irradiated polymethyl methacrylate films

Science.gov (United States)

Bharti, Madhu Lata; Singh, Fouran; Ramola, R. C.; Joshi, Veena

2017-11-01

The self-standing films of non-conducting polymethyl methacrylate (PMMA) were irradiated in vacuum using high energy light ions (HELIs) of 50 MeV Lithium (Li+3) and 80 MeV Carbon (C+5) at various ion dose to induce the optical changes in the films. Upon HELI irradiation, films exhibit a significant enhancement in optical reflectivity at the highest dose. Interestingly, the photoluminescence (PL) emission band with green light at (514.5 nm) shows a noticeable increase in the intensity with increasing ion dose for both ions. However, the rate of increase in PL intensity is different for both HELI and can be correlated with the linear energy transfer by these ions in the films. Origin of PL is attributed to the formation of carbon cluster and hydrogenated amorphous carbon in the polymer films. HAC clusters act as PL active centres with optical reflectivity. Most of the harmful radiation like UV are absorbed by the material and is becoming opaque after irradiation and this PL active material are useful in fabrication of optoelectronic devices, UV-filter, back-lit components in liquid crystal display systems, micro-components for integrate optical circuits, diffractive elements, advanced materials and are also applicable to the post irradiation laser treatment by means of ion irradiation.

Time-correlated single-photon counting study of multiple photoluminescence lifetime components of silicon nanoclusters

Energy Technology Data Exchange (ETDEWEB)

Diamare, D., E-mail: d.diamare@ee.ucl.ac.uk [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom); Wojdak, M. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom); Lettieri, S. [Institute for Superconductors and Innovative Materials, National Council of Research (CNR-SPIN), Via Cintia 80126, Naples (Italy); Department of Physical Sciences, University of Naples “Federico II”, Via Cintia 80126, Naples (Italy); Kenyon, A.J. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom)

2013-04-15

We report time-resolved photoluminescence measurements of thin films of silica containing silicon nanoclusters (Si NCs), produced by PECVD and annealed at temperatures between 700 °C and 1150 °C. While the near infrared emission of Si NCs has long been studied, visible light emission has only recently attracted interest due to its very short decay times and its recently-reported redshift with decreasing NCs size. We analyse the PL decay dynamics in the range 450–700 nm with picosecond time resolution using Time Correlated Single Photon Counting. In the resultant multi-exponential decays two dominant components can clearly be distinguished: a very short component, in the range of hundreds of picoseconds, and a nanosecond component. In this wavelength range we do not detect the microsecond component generally associated with excitonic recombination. We associate the nanosecond component to defect relaxation: it decreases in intensity in the sample annealed at higher temperature, suggesting that the contribution from defects decreases with increasing temperature. The origin of the very fast PL component (ps time region) is also discussed. We show that it is consistent with the Auger recombination times of multiple excitons. Further work needs to be done in order to assess the contribution of the Auger-controlled recombinations to the defect-assisted mechanism of photoluminescence. -- Highlights: ► We report time-resolved PL measurements of Si-Ncs embedded in SiO{sub 2} matrix. ► Net decrease of PL with increasing the annealing temperature has been observed. ► Lifetime distribution analysis revealed a multiexponential decay with ns and ps components. ► Ps components are consistent with the lifetime range of the Auger recombination times. ► No evidence for a fast direct transition at the Brillouin zone centre.

Spin-Related Micro-Photoluminescence in Fe3+ Doped ZnSe Nanoribbons

Directory of Open Access Journals (Sweden)

Lipeng Hou

2016-12-01

Full Text Available Spin-related emission properties have important applications in the future information technology; however, they involve microscopic ferromagnetic coupling, antiferromagnetic or ferrimagnetic coupling between transition metal ions and excitons, or d state coupling with phonons is not well understood in these diluted magnetic semiconductors (DMS. Fe3+ doped ZnSe nanoribbons, as a DMS example, have been successfully prepared by a thermal evaporation method. Their power-dependent micro-photoluminescence (PL spectra and temperature-dependent PL spectra of a single ZnSe:Fe nanoribbon have been obtained and demonstrated that alio-valence ion doping diminishes the exciton magnetic polaron (EMP effect by introducing exceeded charges. The d-d transition emission peaks of Fe3+ assigned to the 4T2 (G → 6A1 (S transition at 553 nm and 4T1 (G → 6A1 (S transition at 630 nm in the ZnSe lattice have been observed. The emission lifetimes and their temperature dependences have been obtained, which reflected different spin–phonon interactions. There exists a sharp decrease of PL lifetime at about 60 K, which hints at a magnetic phase transition. These spin–spin and spin–phonon interaction related PL phenomena are applicable in the future spin-related photonic nanodevices.

Temperature-Dependent Photoluminescence Emission from Unstrained and Strained GaSe Nanosheets

Directory of Open Access Journals (Sweden)

Duan Zhang

2017-11-01

Full Text Available Two-dimensional AIIIBVI layered semiconductors have recently attracted great attention due to their potential applications in piezo-phototronics and optoelectronics. Here, we report the temperature-dependent photoluminescence (PL of strained and unstrained GaSe flakes. It is found that, as the temperature increases, the PL from both the strained (wrinkled and unstrained (flat positions show a prominent red-shift to low energies. However, for the flat case, the slope of PL energy versus temperature at the range of 163–283 K is about −0.36 meV/K, which is smaller than that of the wrinkled one (−0.5 meV/K. This is because more strain can be introduced at the freestanding wrinkled position during the temperature increase, thus accelerates the main PL peak (peak I, direct band gap transition shift to lower energy. Additionally, for the wrinkled sheet, three new exciton states (peaks III, IV, and V appear at the red side of peak I, and the emission intensity is highly dependent on the temperature variation. These peaks can be attributed to the bound exciton recombination. These findings demonstrate an interesting route for optical band gap tuning of the layered GaSe sheet, which are important for future optoelectronic device design.

Correcting for interference effects in the photoluminescence of Cu(In,Ga)Se{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Wolter, Max Hilaire; Siebentritt, Susanne [Laboratory for Photovoltaics, Physics and Materials Science Research Unit, University of Luxembourg, 4422 Belvaux (Luxembourg); Bissig, Benjamin; Reinhard, Patrick; Buecheler, Stephan [Laboratory for Thin Films and Photovoltaics, Empa - Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstr. 129, 8600 Duebendorf (Switzerland); Jackson, Philip [Zentrum fuer Sonnenenergie-und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), 70565 Stuttgart (Germany)

2017-06-15

Photoluminescence (PL) measurements are performed on high-quality Cu(In,Ga)Se{sub 2} (CIGS) thin films with the intention of investigating their electronic structure. Due to the nature of the CIGS absorbers, notably their smooth surface and a graded band gap, the measured PL spectra are distorted by interference effects, limiting thus the information that one can gain. Here we show that, by varying the entrance angle of the laser light and the detection angle of the emitted PL, we are able to correct for interference effects. As a result, we receive interference-free PL spectra that enable us to determine quantities such as band gap energies and quasi-Fermi level splittings (QFLS). Furthermore, we show that it is possible to measure the QFLS even without correcting for interference effects and we compare the QFLS to the open circuit voltage for a particular sample. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition

International Nuclear Information System (INIS)

Feng, Z.C.; Liu, W.; Chua, S.J.; Yu, J.W.; Yang, C.C.; Yang, T.R.; Zhao, J.

2006-01-01

The wavelength shifts in the photoluminescence (PL) from low indium composition (∼ 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energy red-shifts very slightly first, then blue-shifts to reach a maximum at near 100 K, and red-shifts again till room temperature. This unique PL behaviour, indicating the existence of the phase separation, is interpreted qualitatively from the spatial variation of band structure due to the In-compositional fluctuation. Theoretical calculation, based upon a model involving the band-tail states in the radiative recombination, explains the experimental data successfully

Crystal structure, thermally stability and photoluminescence properties of novel Sr10(PO4)6O:Eu2+ phosphors

International Nuclear Information System (INIS)

Guo, Qingfeng; Liao, Libing; Mei, Lefu; Liu, Haikun

2015-01-01

A series of novel luminescent phosphors Sr 10 (PO 4 ) 6 O:Eu 2+ with apatite structure were synthesized via a high temperature solid-state reaction. The phase structure, photoluminescence (PL) properties, the PL thermal stability, as well as the fluorescence decay curves of the samples were investigated to characterize the resulting samples, and the selected Sr 9.97 (PO 4 ) 6 O:0.03Eu 2+ phosphor exhibits strong thermal quenching resistance, retaining the luminance of 88.73% at 150 °C. The quenching concentration of Eu 2+ in Sr 10 (PO 4 ) 6 O was about 0.03 attributing to the dipole–quadrupole interaction. The Sr 10 (PO 4 ) 6 O:Eu 2+ phosphor exhibited a broad-band blue emission at 439 nm upon excitation at 346 nm. The results indicate that Sr 10 (PO 4 ) 6 O:Eu 2+ phosphors have potential applications as near UV-convertible phosphors for white-light UV LEDs. - Graphical abstract: Sr 10 (PO 4 ) 6 O:Eu 2+ phosphors have potential applications as near UV-convertible phosphors for white-light UV LEDs. - Highlights: • Sr 9.97 (PO 4 ) 6 O:0.03Eu 2+ phosphor exhibits strong thermal quenching resistance. • Two different Eu 2+ emission centers exists in Sr 10 (PO 4 ) 6 O. • The activation energy was also estimated for the Eu 2+ luminescence center

Practical considerations for solar energy thermally enhanced photo-luminescence (TEPL) (Conference Presentation)

Science.gov (United States)

Kruger, Nimrod; Manor, Assaf; Kurtulik, Matej; Sabapathy, Tamilarasan; Rotschild, Carmel

2017-04-01

While single-junction photovoltaics (PV's) are considered limited in conversion efficiency according to the Shockley-Queisser limit, concepts such as solar thermo-photovoltaics aim to harness lost heat and overcome this barrier. We claim the novel concept of Thermally Enhanced Photoluminescence (TEPL) as an easier route to achieve this goal. Here we present a practical TEPL device where a thermally insulated photo-luminescent (PL) absorber, acts as a mediator between a photovoltaic cell and the sun. This high temperature absorber emits blue-shifted PL at constant flux, then coupled to a high band gap PV cell. This scheme promotes PV conversion efficiencies, under ideal conditions, higher than 62% at temperatures lower than 1300K. Moreover, for a PV and absorber band-gaps of 1.45eV (GaAs PV's) and 1.1eV respectively, under practical conditions, solar concentration of 1000 suns, and moderate thermal insulation; the conversion efficiencies potentially exceed 46%. Some of these practical conditions belong to the realm of optical design; including high photon recycling (PR) and absorber external quantum efficiency (EQE). High EQE values, a product of the internal QE of the active PL materials and the extraction efficiency of each photon (determined by the absorber geometry and interfaces), have successfully been reached by experts in laser cooling technology. PR is the part of emitted low energy photons (in relation to the PV band-gap) that are reabsorbed and consequently reemitted with above band-gap energies. PV back-reflector reflectivity, also successfully achieved by those who design the cutting edge high efficiency PV cells, plays a major role here.

Nanomaterial Host Bands Effect on the Photoluminescence Properties of Ce-Doped YAG Nanophosphor Synthesized by Sol-Gel Method

Directory of Open Access Journals (Sweden)

L. Guerbous

2015-01-01

Full Text Available Cerium trivalent (Ce3+ doped YAG nano-sized phosphors have been successfully synthesized by sol-gel method using different annealing temperatures. The samples have been characterized by X-ray diffraction (XRD, thermogravimetry (TG, differential scanning calorimetry (DSC analysis, Fourier transform infrared (FTIR spectroscopy, and steady photoluminescence (PL spectroscopy. X-ray diffraction analysis indicates that the pure cubic phase YAG was formed and strongly depends on the cerium content and the annealing temperature. It was found that the grain size ranges from 30 to 58 nm depending on the calcination temperature. The YAG: Ce nanophosphors showed intense, green-yellow emission, corresponding to Ce3+ 5d1→2F5/2, 2F7/2 transitions and its photoluminescence excitation spectrum contains the two Ce3+ 4f1→5d1, 5d2 bands. The crystal filed splitting energy levels positions 5d1 and 5d2 and the emission transitions blue shift with annealing temperatures have been discussed. It was found that the Ce3+ 4f1 ground state position relative to valence band maximum of YAG host nanomaterial decreases with increasing the temperature.

Photoluminescence study of trap-state defect on TiO2 thin films at different substrate temperature via RF magnetron sputtering

Science.gov (United States)

Abdullah, S. A.; Sahdan, M. Z.; Nafarizal, N.; Saim, H.; Bakri, A. S.; Cik Rohaida, C. H.; Adriyanto, F.; Sari, Y.

2018-04-01

This paper highlights the defect levels using photoluminescence spectroscopy of TiO2 thin films. The TiO2 were deposited by Magnetron Sputtering system with 200, 300, 400, and 500 °C substrate temperature on microscope glass substrate. The PL result shows profound effect of various substrate temperatures to defect levels of oxygen vacancies and Ti3+ at titanium interstitial site. Increasing temperature would minimize the oxygen vacancy defect, however Ti3+ shows otherwise. Green region of PL consist of trapped hole for oxygen vacancy, while red region of PL is trapped electron associated to structural defect Ti3+. Green PL is dominant peak at temperature 200 °C, indicating that oxygen vacancy is the main defect at this temperature. However, PL peak shows slightly same value for others samples indicating that the temperature did not give high influence to other level of defect after 200 °C.

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

KAUST Repository

Marcinkevičius, S.

2014-09-15

© 2014 AIP Publishing LLC. Scanning near-field photoluminescence (PL) spectroscopy at different excitation powers was applied to study nanoscale properties of carrier localization and recombination in semipolar (202¯1) InGaN quantum wells (QWs) emitting in violet, blue, and green-yellow spectral regions. With increased excitation power, an untypical PL peak energy shift to lower energies was observed. The shift was attributed to carrier density dependent carrier redistribution between nm-scale sites of different potentials. Near-field PL scans showed that in (202¯1) QWs the in-plane carrier diffusion is modest, and the recombination properties are uniform, which is advantageous for photonic applications.

Photoluminescence and dynamics of excitation relaxation in graphene oxide-porphyrin nanorods composite

International Nuclear Information System (INIS)

Khenfouch, M.; Wéry, J.; Baïtoul, M.; Maaza, M.

2014-01-01

Generally, porphyrin nanostructured materials are known by playing many roles such as photoconductors, photovoltaics and capable of light induced charging. Also their combination with acceptors like graphene, the rising two dimension material, added exciting physical and chemical properties. In this work, Morphology, optical absorption and photoluminescence properties were investigated in order to elucidate the interaction between the few layered graphene oxide (FGO) and pophyrin nanorods. Reporting on the photoluminescence (PL) of both porphyrin nanorods and FGO/porphyrin nanorods composite, synthesized via a self-assembly method, we have experimentally demonstrated the generation of a new photoluminescence band giving rise to a white light. This luminescence was studied by the analysis of its origins and dynamics which show a huge change of exciton life time found to be longer after the interaction with graphene oxide (GO) sheets. -- Highlights: • We prepared FGO-porphyrin nanorods composite via a simple chemical method. • Luminescence properties were studied presenting the absorption, photoluminescence and dynamics measurements. • These results show the emission of a white light which we studied its emissions origins. • TEM images show FGO sheets decorated with porphyrin nanorods. • FGO had like effect an increase of the exciton lifetime in porphyrin nanorods

Photoluminescence and dynamics of excitation relaxation in graphene oxide-porphyrin nanorods composite

Energy Technology Data Exchange (ETDEWEB)

Khenfouch, M., E-mail: khenfouch@yahoo.fr [University Sidi Mohamed Ben Abdellah, Faculty of Sciences Dhar el Mahraz, Laboratory of Solid State Physics, Group of Polymers and Nanomaterials, BP 1796 Atlas, Fez 30 000 (Morocco); iThemba LABS-National Research Foundation of South Africa, Old Faure Road, PO Box 722, Somerset West 7129, Western Cape Province (South Africa); UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, PO Box 392, Pretoria (South Africa); Wéry, J. [Institut des Matériaux Jean Rouxel, Nantes, 2 rue de la Houssinière, BP 32229, 44322 Nantes, Cedex 3 (France); Baïtoul, M., E-mail: baitoul@yahoo.fr [University Sidi Mohamed Ben Abdellah, Faculty of Sciences Dhar el Mahraz, Laboratory of Solid State Physics, Group of Polymers and Nanomaterials, BP 1796 Atlas, Fez 30 000 (Morocco); Maaza, M. [iThemba LABS-National Research Foundation of South Africa, Old Faure Road, PO Box 722, Somerset West 7129, Western Cape Province (South Africa); UNESCO-UNISA Africa Chair in Nanosciences-Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk ridge, PO Box 392, Pretoria (South Africa)

2014-01-15

Generally, porphyrin nanostructured materials are known by playing many roles such as photoconductors, photovoltaics and capable of light induced charging. Also their combination with acceptors like graphene, the rising two dimension material, added exciting physical and chemical properties. In this work, Morphology, optical absorption and photoluminescence properties were investigated in order to elucidate the interaction between the few layered graphene oxide (FGO) and pophyrin nanorods. Reporting on the photoluminescence (PL) of both porphyrin nanorods and FGO/porphyrin nanorods composite, synthesized via a self-assembly method, we have experimentally demonstrated the generation of a new photoluminescence band giving rise to a white light. This luminescence was studied by the analysis of its origins and dynamics which show a huge change of exciton life time found to be longer after the interaction with graphene oxide (GO) sheets. -- Highlights: • We prepared FGO-porphyrin nanorods composite via a simple chemical method. • Luminescence properties were studied presenting the absorption, photoluminescence and dynamics measurements. • These results show the emission of a white light which we studied its emissions origins. • TEM images show FGO sheets decorated with porphyrin nanorods. • FGO had like effect an increase of the exciton lifetime in porphyrin nanorods.

Interwell and intrawell magnetoexcitons in GaAs/AlGaAs superlattices

DEFF Research Database (Denmark)

Timofeev, V. B.; Filin, A. I.; Tartakovskii, A. I.

1997-01-01

The formation of spatially indirect (interwell) excitons in superlattices (SLs) with different barrier widths (different tunneling coupling) is experimentally investigated in a strong enough magnetic field with the use of photoluminescence (PL), photoluminescence excitation (PLE), reflectance spec...

Transformation of photoluminescence and Raman scattering spectra of Si-rich Al{sub 2}O{sub 3} films at thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Vergara Hernandez, E. [UPIITA-Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM-Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Jedrzejewski, J.; Balberg, I. [Racah Institute of Physics, Hebrew University, 91904 Jerusalem (Israel)

2014-11-15

The effect of thermal annealing on optical properties of Al{sub 2}O{sub 3} films with the different Si contents was investigated using the photoluminescence and Raman scattering methods. Si-rich Al{sub 2}O{sub 3} films were prepared by RF magnetron co-sputtering of Si and Al{sub 2}O{sub 3} targets on long quartz glass substrates. Photoluminescence (PL) spectra of as grown Si-rich Al{sub 2}O{sub 3} films are characterized by four PL bands with the peak positions at 2.90, 2.70, 2.30 and 1.45 eV. The small intensity Raman peaks related to the scattering in the amorphous Si phase has been detected in as grown films as well. Thermal annealing at 1150 °C for 90 min stimulates the formation of Si nanocrystals (NCs) in the film area with the Si content exceeded 50%. The Raman peak related to the scattering on optic phonons in Si NCs has been detected for this area. After thermal annealing the PL intensity of all mentioned PL bands decreases in the film area with smaller Si content (≤50%) and increases in the film area with higher Si content (≥50%). Simultaneously the new PL band with the peak position at 1.65 eV appears in the film area with higher Si content (≥50%). The new PL band (1.65 eV) is attributed to the exciton recombination inside of small size Si NCs (2.5–2.7 nm). In bigger size Si NCs (3.5–5.0 nm) the PL band at 1.65 eV has been not detected due to the impact, apparently, of elastic strain appeared at the Si/Al{sub 2}O{sub 3} interface. Temperature dependences of PL spectra for the Si-rich Al{sub 2}O{sub 3} films have been studied in the range of 10–300 K with the aim to reveal the mechanism of recombination transitions for the mentioned above PL bands 2.90, 2.70, 2.30 and 1.45 eV in as grown films. The thermal activation of PL intensity and permanent PL peak positions in the temperature range 10–300 K permit to assign these PL bands to defect related emission in Al{sub 2}O{sub 3} matrix.

Structure and photoluminescence properties of ZnS films grown on porous Si substrates

Science.gov (United States)

Wang, Cai-feng; Hu, Bo; Yi, Hou-hui; Li, Wei-bing

2011-11-01

ZnS films were deposited on porous silicon (PS) substrates with different porosities. With the increase of PS substrate porosity, the XRD diffraction peak intensity decreases and the surface morphology of the ZnS films becomes rougher. Voids appear in the films, due to the increased roughness of PS structure. The photoluminescence (PL) spectra of the samples before and after deposition of ZnS were measured to study the effect of substrate porosity on the luminescence properties of ZnS/PS composites. As-prepared PS substrates emit strong red light. The red PL peak of PS after deposition of ZnS shows an obvious blueshift. As PS substrate porosity increases, the trend of blueshift increases. A green emission at about 550 nm was also observed when the porosity of PS increased, which is ascribed to the defect-center luminescence of ZnS. The effect of annealing time on the structural and luminescence properties of ZnS/PS composites were also studied. With the increase of annealing time, the XRD diffraction peak intensity and the self-activated luminescence intensity of ZnS increase, and, the surface morphology of the ZnS films becomes smooth and compact. However, the red emission intensity of PS decreases, which was associated with a redshift. White light emission was obtained by combining the luminescence of ZnS with the luminescence of PS.

Photoluminescence of acupoint 'Waiqiu' in human superficial fascia

Energy Technology Data Exchange (ETDEWEB)

Zhang Yuan [Synchrotron Radiation Research Center, Department of Physics, Surface Physics Laboratory (State Key Laboratory) of Fudan University, Shanghai 200433 (China); Yan Xiaohui [Synchrotron Radiation Research Center, Department of Physics, Surface Physics Laboratory (State Key Laboratory) of Fudan University, Shanghai 200433 (China); Liu Chenglin [Synchrotron Radiation Research Center, Department of Physics, Surface Physics Laboratory (State Key Laboratory) of Fudan University, Shanghai 200433 (China); Dang Ruishan [Second Military Medical University, Shanghai 200433 (China); Zhang Xinyi [Synchrotron Radiation Research Center, Department of Physics, Surface Physics Laboratory (State Key Laboratory) of Fudan University, Shanghai 200433 (China) and Shanghai Research Center of Acupuncture and Meridian, Pudong, Shanghai 201203 (China)]. E-mail: xy-zhang@fudan.edu.cn

2006-07-15

The spectral characters of an acupuncture point named 'Waiqiu' in superficial fascia tissue have been studied by photoluminescence (PL) spectroscopy under the excitation of 457.9 nm. The PL around 'Waiqiu' acupuncture point consists of two sub-bands resulting from the flavin adenine dinucleotide (FAD) and phospholipids, and the porphyrins (including purine, isoxanthopterin and tryptophan), respectively. More emission due to FAD and phospholipids is found inside the acupuncture effect area of 'Waiqiu' than its marginal or outside acupuncture regions. The ratio of emission intensity of FAD and phospholipids to one of porphyrins gradually decreases along the direction away from the center of the acupuncture point. It implies that the component proportion changes between FAD, phospholipids and porphyrins around the 'Waiqiu' acupuncture point. We suggest that there might be a certain relationship between redox function of FAD and 'Waiqiu' acupuncture effect.

Complementary roles of benzylpiperazine and iodine ‘vapor’ in the strong enhancement of orange photoluminescence from CuI(1 1 1) thin film

International Nuclear Information System (INIS)

Rawal, Takat B; Turkowski, Volodymyr; Rahman, Talat S

2014-01-01

We have employed density functional theory, corrected by the on-site electron–electron repulsion energy U, to clarify the mechanism behind the enhanced orange photoluminescence (PL) of a CuI(1 1 1) thin film conjugated with a benzylpiperazine (BZP) molecule in the presence of an iodine ‘vapor’ atom. Our results demonstrated that the adsorbed molecule and the ‘vapor’ atom play complementary roles in producing the PL. The latter, in attaching to the film surface, creates a hole-trapping surface state located ∼0.25 eV above the valence band-edge of the film, in good agreement with ∼0.2 eV reported in experiments. Upon photo-excitation of the BZP/CuI(1 1 1) system in the presence of surface iodine ‘vapor’ atoms, excited electrons are transferred into the conduction band of CuI, and holes are trapped by the ‘vapor’ atoms. These holes, in turn, quickly relax into the HOMO state of the BZP molecule, owing to the fact that the molecule adsorbs on the film surface in the immediate vicinity of a ‘vapor’ atom. Relaxed holes subsequently recombine with excited electrons in the conduction band of the CuI film, thereby producing a luminescence peak at ∼2.1 eV, in qualitative agreement with experimental findings. (paper)

Hydrothermal synthesis and characteristic photoluminescence of Er-doped SnO{sub 2} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Tuan, Pham Van; Hieu, Le Trung; Nga, La Quynh [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Dung, Nguyen Duc [Advanced Institute of Science and Technology, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Ha, Ngo Ngoc [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam); Khiem, Tran Ngoc, E-mail: khiem@itims.edu.vn [International Training Institute for Materials Science, Hanoi University of Science and Technology, No.1, Dai Co Viet, Hanoi (Viet Nam)

2016-11-15

We report the characteristic photoluminescence (PL) spectra of erbium ion (Er{sup 3+})-doped tin dioxide (SnO{sub 2})nanoparticles. The materials were prepared via hydrothermal method at 180 °C with in 20 h by using various Er{sup 3+} ion concentrations ranging from 0.0 to 1.0 at%. After the synthesis, the materials were characterized through X-ray diffraction and high-resolution transmission electron microscopy. Crystallite SnO{sub 2} and its average particle diameter of approximately 5 nm did not change with Er{sup 3+} ion dopant concentration. Photoluminescence spectra showed the characteristic light emission from the Er{sup 3+} ions. The PL excitation spectra referred to an efficient energy transfer to Er{sup 3+} ions in the presence of SnO{sub 2}nanoparticles. The most intense Er-related emission of SnO{sub 2}:Er{sup 3+} nanoparticles in near infrared region was found in samples containing an Er{sup 3+} ion concentration of 0.25 at%. Although the absorption bandgaps of the materials were identified at approximately 3.8 eV, we found that efficient excitation comes with low excitation energy band edge. Excitation is possibly involved in shallow defects in SnO{sub 2} nanoparticles.

Photoluminescence at 1.54 {mu}m of Er-doped hydrogenated amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Bresler, Mikhail; Gusev, Oleg; Kuznetsov, Alexey; Kudoyarova, Vera; Terukov, Evgenii; Yassievich, Irina [A.F. Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Fuhs, Walther [Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin (Germany); Ulber, Isabell; Weiser, Gerhard [Philipps-Universitat Marburg, Fachbereich Physik, D-35032 Marburg (Germany)

1998-05-11

Photoluminescence (PL) and light absorption of Er-doped amorphous hydrogenated silicon samples are measured at 77-300K. The temperature dependence of luminescence of erbium ions in a-Si:H(Er) is compared with that of intrinsic PL of a-Si:H. The lifetime of excited erbium ions in this amorphous matrix changes from 20 to 8 {mu}s in this temperature range. We propose a defect-related Auger excitation (DRAE) mechanism of erbium luminescence and demonstrate that it is consistent with the whole set of our experimental results. The temperature quenching of the erbium luminescence observed above 200K, with the activation energy of 250 meV, results from the competition of the DRAE and multiphonon nonradiative defect processes for D{sup 0}+e>D{sup -} transition

Nanomedicine photoluminescence crystal-inspired brain sensing approach

Science.gov (United States)

Fang, Yan; Wang, Fangzhen; Wu, Rong

2018-02-01

Precision sensing needs to overcome a gap of a single atomic step height standard. In response to the cutting-edge challenge, a heterosingle molecular nanomedicine crystal was developed wherein a nanomedicine crystal height less than 1 nm was designed and selfassembled on a substrate of either a highly ordered and freshly separated graphite or a N-doped silicon with hydrogen bonding by a home-made hybrid system of interacting single bioelectron donor-acceptor and a single biophoton donor-acceptor according to orthogonal mathematical optimization scheme, and an atomic spatial resolution conducting atomic force microscopy (C-AFM) with MHz signal processing by a special transformation of an atomic force microscopy (AFM) and a scanning tunneling microscopy (STM) were employed, wherein a z axis direction UV-VIS laser interferometer and a feedback circuit were used to achieve the minimized uncertainty of a micro-regional structure height and its corresponding local differential conductance quantization (spin state) process was repeatedly measured with a highly time resolution, as well as a pulsed UV-VIS laser micro-photoluminescence (PL) spectrum with a single photon resolution was set up by traceable quantum sensing and metrology relied up a quantum electrical triangle principle. The coupling of a single bioelectron conducting, a single biophoton photoluminescence, a frequency domain temporal spin phase in nanomedicine crystal-inspired sensing methods and sensor technologies were revealed by a combination of C-AFM and PL measurement data-based mathematic analyses1-3, as depicted in Figure 1 and repeated in nanomedicine crystals with a single atomic height. It is concluded that height-current-phase uncertainty correlation pave a way to develop a brain imaging and a single atomic height standard, quantum sensing, national security, worldwide impact1-3 technology and beyond.

Photoluminescence and thermoluminescence characterization of Eu3+- and Dy3+ -activated Ca3(PO4)2 phosphor

International Nuclear Information System (INIS)

Nagpure, I.M.; Saha, Subhajit; Dhoble, S.J.

2009-01-01

Rare-earth-doped polycrystalline Ca 3 (PO 4 ) 2 :Eu, Ca 3 (PO 4 ) 2 :Dy and Ca 3 (PO 4 ) 2 :Eu,Dy phosphors prepared by a modified solid-state synthesis has been studied for its X-ray diffraction, thermoluminescence (TL) and photoluminescence (PL) characteristics. The PL emission spectra of the phosphor suggest the presence of Eu 3+ ion in Ca 3 (PO 4 ) 2 :Eu and Dy 3+ ion in Ca 3 (PO 4 ) 2 :Dy lattice sites. The TL glow curve of the Ca 3 (PO 4 ) 2 :Eu compounds has a simple structure with a prominent peak at 228 deg. C, while Ca 3 (PO 4 ) 2 :Dy peaking at 146 and 230 deg. C. TL sensitivity of phosphors are compared with CaSO 4 : Dy and found 1.52 and 1.20 times less in Ca 3 (PO 4 ) 2 :Eu and Ca 3 (PO 4 ) 2 :Dy phosphors, respectively. The Ca 3 (PO 4 ) 2 :Eu,Dy phosphors shows switching behavior under two different excitation wavelengths and enhancement in PL intensity of Dy 3+ ions were reported. The paper discusses the photoluminescence and thermoluminescence behavior of Eu 3+ and Dy 3+ ion in Ca 3 (PO 4 ) 2 hosts, it may be applicable to solid-state lighting as well as thermoluminescence dosimetry applications.

Fabrication and micro-photoluminescence property of CdSe/CdS core/shell nanowires

Energy Technology Data Exchange (ETDEWEB)

Dai, Guozhang; Gou, Guangyang; Wu, Zeming; Chen, Yu; Li, Hongjian [Central South University, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Changsha, Hunan (China); Wan, Qiang [Hunan University, School of Physics and Electronics, Changsha (China); Zou, Bingsuo [Beijing Institute of Technology, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing (China)

2015-04-01

Hetero-epitaxial CdSe/CdS core/shell nanowires (NWs) were prepared by a source-controllable chemical vapor deposition method. A two-stage growth mechanism was proposed to the growth process of the core/shell NWs. Micro-photoluminescence (μ-PL) property of individual NW was studied by a confocal microscopy system. The pure CdSe NW emits a red light with peak at 712.3 nm, which is inconsistent with the CdSe band-edge emission. The CdSe/CdS core/shell NW emits two apparent peaks, one is an intensive red emission peak centered at 715.2 nm and the other is a weak green emission peak located at 516.2 nm. The room temperature μ-PL spectrum shows that the PL intensity of CdSe NW was evidently promoted by coating the CdS shell, and this is because CdS improves the surface state optimizing the energy band structure of CdSe NW. The as-synthesized CdSe/CdS core/shell NW has more efficient PL quantum yields than pure CdSe NW and may find potential applications in nanoscale photonic devices. (orig.)

Fabrication and micro-photoluminescence property of CdSe/CdS core/shell nanowires

International Nuclear Information System (INIS)

Dai, Guozhang; Gou, Guangyang; Wu, Zeming; Chen, Yu; Li, Hongjian; Wan, Qiang; Zou, Bingsuo

2015-01-01

Hetero-epitaxial CdSe/CdS core/shell nanowires (NWs) were prepared by a source-controllable chemical vapor deposition method. A two-stage growth mechanism was proposed to the growth process of the core/shell NWs. Micro-photoluminescence (μ-PL) property of individual NW was studied by a confocal microscopy system. The pure CdSe NW emits a red light with peak at 712.3 nm, which is inconsistent with the CdSe band-edge emission. The CdSe/CdS core/shell NW emits two apparent peaks, one is an intensive red emission peak centered at 715.2 nm and the other is a weak green emission peak located at 516.2 nm. The room temperature μ-PL spectrum shows that the PL intensity of CdSe NW was evidently promoted by coating the CdS shell, and this is because CdS improves the surface state optimizing the energy band structure of CdSe NW. The as-synthesized CdSe/CdS core/shell NW has more efficient PL quantum yields than pure CdSe NW and may find potential applications in nanoscale photonic devices. (orig.)

Facile synthesis of S, N co-doped carbon dots and investigation of their photoluminescence properties.

Science.gov (United States)

Zhang, Yue; He, Junhui

2015-08-21

A facile one-pot approach to prepare photoluminescent carbon dots (CDs) was developed through hydrothermal treatment of cysteine and citric acid. The obtained CDs show stable and bright blue emission with a quantum yield of 54% and an average lifetime of 11.61 ns. Moreover, the two-photon induced upconversion fluorescence of the CDs was observed and demonstrated. Interestingly, both down and up conversion fluorescence of the CDs show excitation-independent emission, which is quite different from most of the previously reported CDs. Ultrafast spectroscopy was also employed here to study the photoluminescence (PL) properties of the CDs. After characterization using various spectroscopic techniques, a unique PL mechanism for the as-prepared CDs' fluorescence was proposed accordingly. In addition, the influence of various metal ions on the CD fluorescence was examined and no quenching phenomena were observed. Meanwhile, gold nanoparticles (Au NPs) were found to be good quenchers of CD fluorescence and their quenching behavior was fitted to the Stern-Volmer equation. This provides new opportunities for fluorescence sensor designs and light energy conversion applications. Finally, the as-prepared CDs were inkjet-printed to form a desirable pattern, which is useful for fluorescent patterns, and anti-counterfeiting labeling.

Multiple approaches for enhancing all-organic electronics photoluminescent sensors: Simultaneous oxygen and pH monitoring

International Nuclear Information System (INIS)

Liu, Rui; Xiao, Teng; Cui, Weipan; Shinar, Joseph; Shinar, Ruth

2013-01-01

Graphical abstract: -- Highlights: •Novel simply-fabricated all-organic electronics pH and oxygen optical monitor. •Excitation sources: directionally emitting, narrowed multicolor microcavity OLEDs. •Photodetectors: small molecule- or polymer-based with selective spectral responses. •Sensor film: structured high molecular weight polystyrene:polyethylene glycol blend. •×1.9 sensitivity enhancement and ×2.7 increase in the photoluminescence for oxygen. -- Abstract: Key issues in using organic light emitting diodes (OLEDs) as excitation sources in structurally integrated photoluminescence (PL)-based sensors are the low forward light outcoupling, the OLEDs’ broad electroluminescence (EL) bands, and the long-lived remnant EL that follows an EL pulse. The outcoupling issue limits the detection sensitivity (S) as only ∼20% of the light generated within standard OLEDs can be forward outcoupled and used for sensor probe excitation. The EL broad band interferes with the analyte-sensitive PL, leading to a background that reduces S and dynamic range. In particular, these issues hinder designing compact sensors, potentially miniaturizable, that are devoid of optical filters and couplers. We address these shortcomings by introducing easy-to-employ multiple approaches for outcoupling improvement, PL enhancement, and background EL reduction leading to novel, compact all-organic device architectures demonstrated for simultaneous monitoring of oxygen and pH. The sensor comprises simply-fabricated, directionally-emitting, narrower-band, multicolor microcavity OLED excitation and small molecule- and polymer-based organic photodetectors (OPDs) with a more selective spectral response. Additionally, S and PL intensity for oxygen are enhanced by using polystyrene (PS):polyethylene glycol (PEG) blends as the sensing film matrix. By utilizing higher molecular weight PS, the ratio τ 0 /τ 100 (PL decay time τ at 0% O 2 /τ at 100% O 2 ) that is often used to express S

Negative thermal quenching of the defects in GaInP top cell with temperature-dependent photoluminescence analysis

Science.gov (United States)

Junling, Wang; Rui, Wu; Tiancheng, Yi; Yong, Zheng; Rong, Wang

2018-01-01

Temperature-dependent photoluminescence (PL) measurements were carried out to investigate the irradiation effects of 1.0 MeV electrons on the n+- p GaInP top cell of GaInP/GaAs/Ge triple-junction solar cells in the 10-300 K temperature range. The PL intensities plotted against inverse temperature in an Arrhenius plot shows a thermal quenching behavior from 10 K to 140 K and an unusual negative thermal quenching (NTQ) behavior from 150 K to 300 K. The appearance of the PL thermal quenching with increasing temperature confirms that there is a nonradiative recombination center, i.e., the H2 hole trap located at Ev + 0.55 eV, in the cell after electron irradiation. The PL negative thermal quenching behavior may tentatively be attributed to the intermediate states at an energy level of 0.05 eV within the band gap in GaInP top cell.

Examination of electronic structure differences between CIGSSe and CZTSSe by photoluminescence study

Energy Technology Data Exchange (ETDEWEB)

Tai, Kong Fai; Huan, Cheng Hon Alfred [Division of Physics and Applied Physics, School of Physical & Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371 (Singapore); Gershon, Talia; Gunawan, Oki, E-mail: ogunawa@us.ibm.com [IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, New York 10598 (United States)

2015-06-21

In this paper, we elaborate on the interpretation and use of photoluminescence (PL) measurements as they relate to the “donor/acceptor” and “electrostatic potential fluctuations” models for compensated semiconductors. Low-temperature (7 K) PL measurements were performed on high-efficiency Cu(In,Ga)(S,Se){sub 2} and two Cu{sub 2}ZnSn(S,Se){sub 4} solar cells with high- and low-S/(S + Se) ratio, all fabricated by a hydrazine solution-processing method. From excitation-dependent PL, the total defect density (which include radiative and non-radiative defects) within the band gap (E{sub g}) was estimated for each material and the consequent depth of the electrostatic potential fluctuation (γ) was calculated. The quasi-donor-acceptor pair (QDAP) density was estimated from the blue-shift magnitude of the QDAP PL peak position in power-dependent PL spectra. As a further verification, we show that the slope of the lifetime as a function of photon energies (dτ/dE) is consistent with our estimate for the magnitude of γ. Lastly, the energetic depth of the QDAP defects is examined by studying the spectral evolution of the PL as a function of temperature. The shallow defect levels in CIGSSe resulted in a significant blue-shift of the PL peak with temperature, whereas no obvious shift was observed for either CZTSSe sample, indicating an increase in the depth of the defects. Further improvement on Cu{sub 2}ZnSn(S,Se){sub 4} solar cell should focus on reducing the sub-E{sub g} defect density and avoiding the formation of deep defects.

Photoluminescence study of epitaxially grown ZnSnAs2:Mn thin films

International Nuclear Information System (INIS)

Mammadov, E; Haneta, M; Toyota, H; Uchitomi, N

2011-01-01

The photoluminescence (PL) properties of heavily Mn-doped ZnSnAs 2 layers epitaxially grown on nearly lattice-matched semi-insulating InP substrates are studied. PL spectra are obtained for samples with Mn concentrations of 5, 12 and 24 mol% relative to the combined concentrations of Zn and Sn. A broad emission band centered at ∼ 1 eV is detected for Mn-doped layers at room temperature. The emission is a intense broad asymmetric line at low temperatures. The line is reconstructed by superposition of two bands with peak energies of ∼ 0.99 and 1.07 eV, similar to those reported for InP. These bands are superimposed onto a 1.14 eV band with well-resolved phonon structure for the layer doped with 12 % Mn. Recombination mechanism involving the split-off band of the ZnSnAs 2 is suggested. Temperature dependence of integrated intensities of the PL bands indicates to thermally activated emission with activation energies somewhat different from those found for InP. Mn substitution at cationic sites increases the concentration of holes which may act as recombination centers. Recombination to the holes bound to Mn ions with the ground state located below the top of the valence band has been proposed as a possible PL mechanism.

Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

DEFF Research Database (Denmark)

Steffensen, O. M.; Birkedal, Dan; Hanberg, J.

1995-01-01

The effects of CH4/H2 reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0...

Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

Energy Technology Data Exchange (ETDEWEB)

Shaleev, Mikhail; Novikov, Alexey; Baydakova, Nataliya; Yablonskiy, Artem; Drozdov, Yuriy; Lobanov, Dmitriy; Krasilnik, Zakhary [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Kuznetsov, Oleg [Physical-Technical Research Institute, Nizhny Novgorod State University, pr. Gagarina 23, 603950 Nizhny Novgorod (Russian Federation)

2011-03-15

The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self-assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile-stained Si layers was studied. This line appears due to the II-type optical transition between the holes localized in islands and the electrons confined in tensile-strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion-induced smearing of strained Si layer above the islands. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Glutathione-assisted synthesis of star-shaped zinc oxide nanostructures and their photoluminescence behavior

International Nuclear Information System (INIS)

Kavita; Singh, Karamjit; Kumar, Sunil; Bhatti, H.S.

2014-01-01

Star-shaped ZnO nanostructures have been synthesized by facile chemical co-precipitation method in the presence of glutathione. Glutathione, a reducing agent, shape modifier and an entirely benign antioxidant; acts as a capping agent in the present study. The powder X-ray diffraction patterns indicate that the novel star-shaped ZnO nanostructures exhibit hexagonal structure. Fourier transform infra-red spectroscopic studies confirmed the anchoring of glutathione on ZnO nanocrystals. Transmission electron microscopy and field emission scanning electron microscopy revealed the star and cube-shaped shaped morphology of the glutathione modified nanocrystals. Optical characterization of synthesized nanocrystals has been done by UV–vis absorption spectroscopy and steady state photoluminescence spectroscopy. Recorded Photoluminescence spectra confirm the multi-chromatic photoluminescence behavior of the synthesized nanostructures. - Highlights: • Morphology has been investigated as a function of capping agent concentration. • Comparison between capped and uncapped ZnO nanoparticles has been examined. • Diffraction scans show the crystalline wurtzite structure of synthesized product. • Recorded PL spectra show the multichromatic behavior of synthesized nanostructures

Synthesis and photoluminescence properties of Sm3+-doped CaWO4 nanoparticles

International Nuclear Information System (INIS)

Xiao Qi; Zhou Qitao; Li Ming

2010-01-01

The Sm 3+ -doped CaWO 4 nanoparticles were synthesized by hydrothermal method. The room temperature photoluminescence (PL) spectra of Sm 3+ -doped CaWO 4 nanoparticles doped with different Sm 3+ concentrations under 405 nm excitation have been investigated. The PL spectra showed four strong emission peaks at 460, 571, 609, and 653 nm. The first emission peak at 460 nm could be due to a structural defect of the lattice, an oxygen-deficient WO 3 complex. The other three emissions at 571, 609, and 653 nm were due to the f-f forbidden transitions of the 4f electrons of Sm 3+ , corresponding to 4 G 5/2 → 6 H 5/2 (571 nm), 6 H 7/2 (609 nm), and 6 H 9/2 (653 nm), respectively. In addition, the optimum Sm 3+ concentration in CaWO 4 nanoparticles for optical emission was determined to be 1.0%. The Sm 3+4 G 5/2 → 6 H 7/2 (609 nm) emission intensity of Sm 3+ -doped CaWO 4 nanoparticles significantly increased with the increase of Sm 3+ concentration, and showed a maximum when Sm 3+ doping content was 1.0%. If Sm 3+ concentration continued to increase, namely more than 1.0%, the Sm 3+4 G 5/2 → 6 H 7/2 emission intensity would decrease. The present materials might be a promising phosphor for white-light LED applications.

A series of luminescent Re(I) complexes with electron-donor/acceptor moieties: Synthesis, characterization, and photoluminescence

International Nuclear Information System (INIS)

Ge Hu; Qing She; Lei Guo

2012-01-01

In this paper, we synthesize three Re(I) complexes of Re(CO) 3 (PPO)Br, Re(CO) 3 (PTO)Br, and Re(CO) 3 (PBI)Br, where PPO=2-phenyl-5-(pyridin-2-yl)-1,3,4-oxadiazole, PTO=2-(pyridin-2-yl)-5-p-tolyl-1,3,4-oxadiazole, PBI=2-(pyridin-2-yl)-1H-benzo[d]imidazole. Their single crystals and photophysical properties are measured and discussed in detail. The correlation between ligand structure and corresponding PL characteristics of Re(I) complex has been investigated. It is found that a ligand with strong electron-donor can efficiently increase both absorption and emissive energy of Re(I) complex. In addition, electron-rich ligand can increase the electron density of the complex and thus enhance the oscillator strength of electronic transition, improving the photoluminescence performance. - Highlights: ► Three novel phosphorescent Re(I) complexes are synthesized. ► Molecular structures, photophysical, and electronic properties are studied. ► Strong electron-donor can increase emissive energy. ► Electron-rich ligand can enhance the oscillator strength of electronic transition.

Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

Energy Technology Data Exchange (ETDEWEB)

Shimosako, N., E-mail: n-shimosako@sophia.jp; Inose, Y.; Satoh, H.; Kinjo, K.; Nakaoka, T.; Oto, T. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Kishino, K.; Ema, K. [Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan); Sophia Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

2015-11-07

We have measured and analyzed the carrier-density dependence of photoluminescence (PL) spectra and the PL efficiency of InGaN/GaN multiple quantum wells in nanocolumns and in a thin film over a wide excitation range. The localized states parameters, such as the tailing parameter, density and size of the localized states, and the mobility edge density are estimated. The spectral change and reduction of PL efficiency are explained by filling of the localized states and population into the extended states around the mobility edge density. We have also found that the nanocolumns have a narrower distribution of the localized states and a higher PL efficiency than those of the film sample although the In composition of the nanocolumns is higher than that of the film.

Propagation effect on photoluminescence of spin-aligned high-density exciton magnetic polarons in Cd{sub 0.8}Mn{sub 0.2}Te

Energy Technology Data Exchange (ETDEWEB)

Nagata, M.; Hirase, T.; Miyajima, K., E-mail: miyajima@rs.tus.ac.jp

2017-04-15

Characteristics of photoluminescence (PL) originating from high-density exciton magnetic polarons (HD-EMPs) for Cd{sub 0.8}Mn{sub 0.2}Te were investigated. The PL appeared only under selective excitation of the localized excitons, and the intensity increased superlinearly with the excitation density. Directivity of the PL was revealed. Therefore, it is concluded that the superlinear increase in the PL intensity resulted from a light amplification process owing to the stimulated emission. In addition, the existence of birefringence that originates from a uniaxial gradation of the Mn ion concentrations was revealed. The degree of circular polarization (DOCP) of the PL is important to obtain the spin alignment state of the HD-EMPs. The initial DOCPs of the PL were examined by removing a variation of the polarization during propagation inside the sample. As a result, it was found that the initial DOCPs of the PL were almost constant for the photon energy. The obtained initial DOCPs exhibited different values for right- and left-circularly polarized excitations, which resulted from different mechanisms of the spin alignment of the HD-EMPs.

Environment dependent enhanced photoluminescence and Boolean logic gates like behavior of Bi2O3 and Ag:Bi2O3 nanostructures

Science.gov (United States)

Hariharan, S.; Karthikeyan, B.

2018-03-01

In the evolution of nanotechnology research for smart and precise sensor fabrication, here we report the implementation of simple logic gate operations performing by luminescent nanostructures in biomolecule environment based on photoluminescence (PL) technique. This present work deals with the luminescence property of α-Bi2O3 and Ag modified α-Bi2O3 nanostructures for D-glucose and Bovine serum albumin (BSA) sensing applications. These nanostructures are prepared by simple co-precipitation method and their morphology are examined using transmission electron microscope (TEM). We explore the PL characteristics of the prepared nanostructures and observe their change in PL intensity in the presence of D-glucose and BSA molecules. Enhancement in PL intensity is observed in the presence of D-glucose and BSA. Based on the PL response of prepared nanostructures in the biomolecule environment, we demonstrate biophotonic logic gates including YES, PASS 0, OR and INHIBIT gates.

Linearly polarized photoluminescence of anisotropically strained c-plane GaN layers on stripe-shaped cavity-engineered sapphire substrate

Science.gov (United States)

Kim, Jongmyeong; Moon, Daeyoung; Lee, Seungmin; Lee, Donghyun; Yang, Duyoung; Jang, Jeonghwan; Park, Yongjo; Yoon, Euijoon

2018-05-01

Anisotropic in-plane strain and resultant linearly polarized photoluminescence (PL) of c-plane GaN layers were realized by using a stripe-shaped cavity-engineered sapphire substrate (SCES). High resolution X-ray reciprocal space mapping measurements revealed that the GaN layers on the SCES were under significant anisotropic in-plane strain of -0.0140% and -0.1351% along the directions perpendicular and parallel to the stripe pattern, respectively. The anisotropic in-plane strain in the GaN layers was attributed to the anisotropic strain relaxation due to the anisotropic arrangement of cavity-incorporated membranes. Linearly polarized PL behavior such as the observed angle-dependent shift in PL peak position and intensity comparable with the calculated value based on k.p perturbation theory. It was found that the polarized PL behavior was attributed to the modification of valence band structures induced by anisotropic in-plane strain in the GaN layers on the SCES.

Improved photoluminescence property of CTAB assisted polyaniline-AlZnO nanocomposite

Energy Technology Data Exchange (ETDEWEB)

Mitra, Mousumi; Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com [Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah (India); Kargupta, Kajari [Department of Chemical Engineering, Jadavpur University, Kolkata (India); Ganguly, Saibal [Chemical Engineering department, Universiti Teknology Petronas, Tronoh (Malaysia)

2015-06-24

Polyaniline-Al doped ZnO ((PANI-AlZnO:: 70:30) nanocomposite was prepared via in situ chemical oxidative polymerization, while the hexagonal powder of AlZnO was synthesized via sol-gel technique, using Hexadecyltrimethylammonium bromide (CTAB) as a capping agent. The prepared nanocomposite was characterized by High resolution transmission electron microscopy (HRTEM), EDAX, X-ray diffraction (XRD) and Fourier transforms infrared (FTIR) spectra. The optical property of the nanomaterials is examined by photoluminescence (PL) spectra analysis. The XRD pattern confirms the formation of Al doped ZnO as well as PANI. The HRTEM images of the composite showed the formation of hexagonal AlZnO embedded in polyaniline matrix. EDAX spectrum shows the compositional analysis of the nanocomposite. FTIR spectra confirm the formation of nanocomposite of PANI and hexagonal AlZnO. The PL intensity of the nanocomposite is improved as compared to pure AlZnO.

Temperature-dependent photoluminescence analysis of ZnO nanowire array annealed in air

Science.gov (United States)

Sun, Yanan; Gu, Xiuquan; Zhao, Yulong; Wang, Linmeng; Qiang, Yinghuai

2018-05-01

ZnO nanowire arrays (NWAs) were prepared on transparent conducting fluorine doped tin oxide (FTO) substrates through a facile hydrothermal method, followed by a 500 °C annealing to improve their crystalline qualities and photoelectrochemical (PEC) activities. It was found that the annealing didn't change the morphology, but resulted in a significant reduction of the donor concentration. Temperature-dependent photoluminescence (PL) was carried out for a comprehensive analysis of the effect from annealing. Noteworthy, four dominant peaks were identified from the 10 K spectrum of a 500 °C annealed sample, and they were assigned to FX, D0X, (e, D0) and (e, D0) -1LO, respectively. Of them, the FX emission was only existed below 130 K, while the room-temperature (RT) PL spectrum was dominated by the D0X emission.

Photoluminescence and lasing properties of ZnO nanorods

International Nuclear Information System (INIS)

Lee, Geon Joon; Lee, Young Pak; Min, Sun Ki; Han, Sung Hwan; Lim, Hwan Hong; Cha, Myoung Sik; Kim, Sung Soo; Cheong, Hyeon Sik

2010-01-01

In this study, we investigated the structures, photoluminescence (PL), and lasing characteristics of the ZnO nanorods prepared by using chemical bath deposition. The continuous-wave HeCd laser excited PL spectra of the ZnO nanorods exhibited two emission bands, one in the UV region and the other in the visible region. The UV emission band has its peak at 3.25 eV with a bandwidth of 160 meV. However, the PL spectra under 355-nm, 35-ps pulse excitation exhibited a spectrally-narrowed UV emission band with a peak at 3.20 eV and a spectral width of 35 meV. The lasing phenomena were ascribed to the amplified spontaneous emission (ASE) caused by coupling of the microcavity effect of ZnO nanorods and the high-intensity excitation. Above the lasing threshold, the ASE peak intensity exhibited a superlinear dependence on the excitation intensity. For an excitation pulse energy of 3 mJ, the ASE peak intensity was increased by enlarging the length of the ZnO nanorods from 1 μm to 4 μm. In addition, the PL spectrum under 800-nm femtosecond pulse excitation exhibited second harmonic generation, as well as the multiphoton absorption-induced UV emission band. In this research, ZnO nanorods were grown on seed layers by using chemical bath deposition in an aqueous solution of Zn(NO 3 ) 2 and hexamethyltetramine. The seed layers were prepared on conducting glass substrates by dip coating in an aqueous colloidal dispersion containing 50% 70-nm ZnO nanoparticles. Scanning electron microscopy clearly revealed that ZnO nanorods were successfully grown on the seed layers.

Substrate effects on photoluminescence and low temperature phase transition of methylammonium lead iodide hybrid perovskite thin films

Science.gov (United States)

Shojaee, S. A.; Harriman, T. A.; Han, G. S.; Lee, J.-K.; Lucca, D. A.

2017-07-01

We examine the effects of substrates on the low temperature photoluminescence (PL) spectra and phase transition in methylammonium lead iodide hybrid perovskite (CH3NH3PbI3) thin films. Structural characterization at room temperature with X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman spectroscopy indicated that while the chemical structure of films deposited on glass and quartz was similar, the glass substrate induced strain in the perovskite films and suppressed the grain growth. The luminescence response and phase transition of the perovskite thin films were studied by PL spectroscopy. The induced strain was found to affect both the room temperature and low temperature PL spectra of the hybrid perovskite films. In addition, it was found that the effects of the glass substrate inhibited a tetragonal to orthorhombic phase transition such that it occurred at lower temperatures.

Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing

International Nuclear Information System (INIS)

Fu Mingyue; Tsai, J.-H.; Yang, C.-F.; Liao, C.-H.

2008-01-01

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO 2 films implanted by different doses of Si + ions. Room-temperature PL from 400-nm-thick SiO 2 films implanted to a dose of 3x10 16 cm -2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 deg. C) and duration (5-20 s). The reported approach of implanting silicon into SiO 2 films followed by RTA may be effective for tuning Si-based photonic devices.

Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

International Nuclear Information System (INIS)

Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

2002-01-01

The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

Science.gov (United States)

Barbagiovanni, E. G.; Strano, V.; Franzò, G.; Crupi, I.; Mirabella, S.

2015-03-01

Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two Vo states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O2 on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs.

Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy

International Nuclear Information System (INIS)

Kashtiban, R J; Bangert, U; Harvey, A J; Sherliker, B; Halsall, M P

2010-01-01

InGaN/GaN multilayer quantum dot structures produced by MOCVD techniques on c-plane sapphire were studied by transmission electron microscopy (TEM) and photoluminescence (PL) techniques. Indium fluctuations ranging from 1-4 nm were observed with both energy filtered TEM (EFTEM) and high angle annular dark field (HAADF) scanning TEM. The existence of V-shaped defects with nucleation centres at the termination of threading dislocation were observed in HAADF images. There was also evidence of the formation of large quantum dots at low densities from lattice HRTEM images. This was further confirmed by PL measurements through the observation of a single sharp line at low power with the typical saturation behaviour at higher power excitation.

Low Temperature Photoluminescence of 6H fluorescent SiC

DEFF Research Database (Denmark)

Wei, Yi; Künecke, Ulrike; Jokubavicius, Valdas

. The PL was excited by a diode laser source with wavelength of 405 nm and power of 5 mW. The temperature of the PL measurement was ranged from 25K to 300K when the liquid nitrogen cryostat was used, while lower temperature from 5K was achieved when the cryostat with liquid helium was applied....... The anomalous temperature dependences of the PL intensity spectrum of f-SiC samples were found. The PL peak energy’s S-shape dependence on the temperature was observed which was caused by nitrogen induced localization effect. For strong p-type f-SiC, one more PL intensity peak at 5 k was observed at wavelength...

Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

Energy Technology Data Exchange (ETDEWEB)

Kim, Soaram; Park, Hyunggil; Nam, Giwoong; Yoon, Hyunsik; Leem, Jaeyoung [Inje Univ., Gimhae (Korea, Republic of); Kim, Jong Su; Lee, Sangheon [Yeungnam Univ., Gyeongsan (Korea, Republic of); Kim, Jin Soo [Chonbuk National Univ., Jeonju (Korea, Republic of); Son, Jeongsik [Kyungwoon Univ., Gumi (Korea, Republic of)

2013-11-15

Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons (D{sup o}X), and the first LO phonon replicas of D{sup o}X, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about ∼70 meV, while that of DAP was about ∼38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.

Improving the photoluminescence response of Er-Tm: Al2O3 films by Yb codoping

International Nuclear Information System (INIS)

Xiao Zhisong; Serna, R.; Afonso, C.N.; Cheng Guoan; Vickridge, I.

2007-01-01

Amorphous Al 2 O 3 films doped with Er, Tm and Yb have been prepared by pulsed laser deposition. A broadband emission in the range 1400-1700 nm with two peaks around 1540 and 1640 nm has been observed, both in the Er-Tm and Er-Tm-Yb codoped films. The Tm-related photoluminescence (PL) intensity at 1640 nm is enhanced when codoping with Yb thus suggesting the existence of multiple energy transfer processes from Yb to Er and Er to Tm. The Er-Tm-Yb codoped film exhibits a broadband emission with a full-width half-maximum of 184 nm similar to that of the film codoped with Tm and Er but having higher Tm to Er concentration ratio and higher PL lifetime values

Photoluminescence of double core/shell infrared (CdSeTe)/ZnS quantum dots conjugated to Pseudo rabies virus antibodies

Science.gov (United States)

Torchynska, T. V.; Casas Espinola, J. L.; Jaramillo Gómez, J. A.; Douda, J.; Gazarian, K.

2013-06-01

Double core CdSeTe/ZnS quantum dots (QDs) with emission at 800 nm (1.60 eV) have been studied by photoluminescence (PL) and Raman scattering methods in the non-conjugated state and after the conjugation to the Pseudo rabies virus (PRV) antibodies. The transformation of PL spectra, stimulated by the electric charge of antibodies, has been detected for the bioconjugated QDs. Raman scattering spectra are investigated with the aim to reveal the CdSeTe core compositions. The double core QD energy diagrams were designed that help to analyze the PL spectra and their transformation at the bioconjugation. It is revealed that the interface in double core QDs has the type II quantum well character that permits to explain the near IR optical transition (1.60 eV) in the double core QDs. It is shown that the essential transformation of PL spectra is useful for the study of QD bioconjugation with specific antibodies and can be a powerful technique in early medical diagnostics.

Evolution of Photoluminescence, Raman, and Structure of CH3NH3PbI3 Perovskite Microwires Under Humidity Exposure

Science.gov (United States)

Segovia, Rubén; Qu, Geyang; Peng, Miao; Sun, Xiudong; Shi, Hongyan; Gao, Bo

2018-03-01

Self-assembled organic-inorganic CH3NH3PbI3 perovskite microwires (MWs) upon humidity exposure along several weeks were investigated by photoluminescence (PL) spectroscopy, Raman spectroscopy, and X-ray diffraction (XRD). We show that, in addition to the common perovskite decomposition into PbI2 and the formation of a hydrated phase, humidity induced a gradual PL redshift at the initial weeks that is stabilized for longer exposure ( 21 nm over the degradation process) and an intensity enhancement. Original perovskite Raman band and XRD reflections slightly shifted upon humidity, indicating defects formation and structure distortion of the MWs crystal lattice. By correlating the PL, Raman, and XRD results, it is believed that the redshift of the MWs PL emission was originated from the structural disorder caused by the incorporation of H2O molecules in the crystal lattice and radiative recombination through moisture-induced subgap trap states. Our study provides insights into the optical and structural response of organic-inorganic perovskite materials upon humidity exposure.

Strong Carrier–Phonon Coupling in Lead Halide Perovskite Nanocrystals

Science.gov (United States)

2017-01-01

We highlight the importance of carrier–phonon coupling in inorganic lead halide perovskite nanocrystals. The low-temperature photoluminescence (PL) spectrum of CsPbBr3 has been investigated under a nonresonant and a nonstandard, quasi-resonant excitation scheme, and phonon replicas of the main PL band have been identified as due to the Fröhlich interaction. The energy of longitudinal optical (LO) phonons has been determined from the separation of the zero phonon band and phonon replicas. We reason that the observed LO phonon coupling can only be related to an orthorhombically distorted crystal structure of the perovskite nanocrystals. Additionally, the strength of carrier–phonon coupling has been characterized using the ratio between the intensities of the first phonon replica and the zero-phonon band. PL emission from localized versus delocalized carriers has been identified as the source of the observed discrepancies between the LO phonon energy and phonon coupling strength under quasi-resonant and nonresonant excitation conditions, respectively. PMID:29019652

Improving stability of photoluminescence of ZnSe thin films grown by molecular beam epitaxy by incorporating Cl dopant

International Nuclear Information System (INIS)

Wang, J. S.; Shen, J. L.; Chen, W. J.; Tsai, Y. H.; Wang, H. H.; Yang, C. S.; Chen, R. H.; Tsai, C. D.

2011-01-01

This investigation studies the effect of chlorine (Cl) dopant in ZnSe thin films that were grown by molecular beam epitaxy on their photoluminescence (PL) and the stability thereof. Free excitonic emission was observed at room-temperature in the Cl-doped sample. Photon irradiation with a wavelength of 404 nm and a power density of 9.1 W/cm 2 has a much stronger effect on PL degradation than does thermal heating to a temperature of 150 deg. C. Additionally, this study shows that the generation of nonradiative centers by both photon irradiation and thermal heating can be greatly inhibited by incorporating Cl dopant.

Tuning the carbon nanotube photoluminescence enhancement at addition of cysteine through the change of external conditions

Energy Technology Data Exchange (ETDEWEB)

Kurnosov, N.V.; Karachevtsev, M.V.; Leontiev, V.S.; Karachevtsev, V.A., E-mail: karachevtsev@ilt.kharkov.ua

2017-01-15

The enhancement of the photoluminescence (PL) from the semiconducting single-walled carbon nanotubes suspended with single-stranded DNA (ssDNA) in water observed after amino acids doping is the largest at cysteine addition. The PL intensity increased through the passivation of p-defects on the carbon nanotube sidewall by the cysteine molecules due to thiol group. The effect of several external factors on the cysteine-induced enhancement of PL from carbon nanotubes covered with ssDNA was studied: UV irradiation, tip or bath sonication treatment of the suspension, the ionic strength and pH of aqueous suspension. It turned out that all these factors have an essential influence on the dependence of the PL enhancement on the cysteine concentration through inducing of additional defects on nanotube as well as a change of the nanotube surface coverage with polymer. The obtained experimental results demonstrated that PL from carbon nanotubes can be exploited successfully for the monitoring of cysteine concentration in aqueous solution. - Highlights: • Cysteine doping enhances carbon nanotube emission more than other amino acids do. • SWNT emission dependence on cysteine concentration is tuned by UV irradiation and pH. • Type of sonication treatment influences SWNT PL dependence on cysteine concentration. • Polymer coverage and defectiveness of nanotubes effect on nanotube emission. • Graphic abstract.

Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

International Nuclear Information System (INIS)

Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru

2012-01-01

Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.

A dioxaborine cyanine dye as a photoluminescence probe for sensing carbon nanotubes

Directory of Open Access Journals (Sweden)

Mohammed Al Araimi

2016-12-01

Full Text Available The unique properties of carbon nanotubes have made them the material of choice for many current and future industrial applications. As a consequence of the increasing development of nanotechnology, carbon nanotubes show potential threat to health and environment. Therefore, development of efficient method for detection of carbon nanotubes is required. In this work, we have studied the interaction of indopentamethinedioxaborine dye (DOB-719 and single-walled carbon nanotubes (SWNTs using absorption and photoluminescence (PL spectroscopy. In the mixture of the dye and the SWNTs we have revealed new optical features in the spectral range of the intrinsic excitation of the dye due to resonance energy transfer from DOB-719 to SWNTs. Specifically, we have observed an emergence of new PL peaks at the excitation wavelength of 735 nm and a redshift of the intrinsic PL peaks of SWNT emission (up to 40 nm in the near-infrared range. The possible mechanism of the interaction between DOB-719 and SWNTs has been proposed. Thus, it can be concluded that DOB-719 dye has promising applications for designing efficient and tailorable optical probes for the detection of SWNTs.

Identification of Ag and Cd photoluminescence in $^{111}$Ag-doped GaN

CERN Document Server

Stötzler, A; Deicher, M

1999-01-01

In order to unambiguously identify the chemical nature of Cd and Ag related optical transitions in GaN, epitaxial GaN layers were implanted with the radioactive isotope $^{111}$Ag which decays into stable $^{111}$Cd. This chemical transmutation was monitored by photoluminescence (PL) spectroscopy. Being an element specific property, the half-life of this decay was used to establish the chemical assignment of the optical transitions to a specific defect. We found that the Ag related transitions consist of a series of four single lines (1.610, 1.600, 1.594, and 1.573 eV), each accompanied by two phonon replicas separated by 63 meV. Cd produces two PL bands centered at 2.7 and 3.2 eV. Additional Cd-related single transitions at 3.341, 3.328, and 3.249 eV have been observed. Exponential fits to the PL intensities yield half-lives of $t_{1/2}^{Ag}$= (7.61$\\pm$0.27) d and $t_{1/2}^{Cd}$=(7.60$\\pm$0.27) d, respectively, in good agreement with the half-life of $^{111}$Ag of 7.45 d. (13 refs).

Tailoring the morphology of electrodeposited ZnO and its photoluminescence properties

Science.gov (United States)

Cui, H.; Mollar, M.; Marí, B.

2011-01-01

High density ZnO columnar films with well-aligned and well-perpendicular to the surface of film were electrodeposited on ITO substrates by using an electrolyte consisting of a mix of water and organic solvent namely dimethylsulfoxide (DMSO). The effect of mixing ratio of water and DMSO on the growth of film has been examined critically. SEM images have shown that well-oriented ZnO quasi-nano columns were formed perpendicular to the substrate. At the same time we found there are three kinds of competitions for growth of ZnO crystalmorphology i.e. column, rod and needle like. The needle like morphology has high density with well-aligned structure. The reasons for the growth of films of different morphology and their photoluminescence (PL) properties have been presented and discussed. It has been found that the three-dimensional (3D) ordered ZnO structure exhibits high intensity PL band which may shift their position and intensity with the varying conditions of depositions.

Photoluminescence studies of ZnO doped with stable and radioactive impurities

CERN Document Server

Cullen, Joseph; Martin O, Henry

In this work the IIb-VI compound semiconductor ZnO is doped, via ion implantation of stable and radioactive isotopes, in order to investigate the chemical nature of exciton re-combinations bound to previously unidentified defects. Photo-luminescence (PL) is discussed and is used extensively as the primary investigative technique. A new defect emission feature, centred around 3.324 eV, is found to be related to Ge impurities occupying substitutional Zn sites in ZnO. This centre is investigated by temperature dependent PL, piezo-spectroscopy and Zeeman spectroscopy. The centre is donor-like in nature. Uniaxial stress measurements indicate that the defect centre has trigonal symmetry and applied magnetic field measurements reveal the neutral charge state of the centre and the donor-like binding mechanism. Subsequent to this, a study is undertaken of the iso-electronic defect Hg in ZnO studying the zero phonon feature at 3.279 eV and its associated phonon replica band. Temperature dependent measurements reveal tw...

Enantioselective silver nanoclusters: Preparation, characterization and photoluminescence spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Farrag, Mostafa, E-mail: mostafafarrag@aun.edu.eg

2016-09-01

Herein, we report a new wet-synthesis method to separate some water-soluble chiral silver nanoclusters with high yield. The cluster material was obtained by the reduction of silver nitrate with NaBH{sub 4} in the presence of three ligands L-penicillamine (L-pen), D-penicillamine (D-pen) and racemic mixture of penicillamine (rac-pen), functioning as capping ligand. For characterizing all silver cluster samples, the particle size was assessed by transmission electron microscopy (TEM) and powder X-ray diffraction (XRD) and their average chemical formula was determined from thermogravimetric analysis (TGA) and elemental analysis (EA). The particles sizes of all three clusters are 2.1 ± 0.2 nm. The optical properties of the samples were studied by four different methods: UV-vis spectroscopy, Fourier transform infrared spectroscopy (FTIR), photoluminescence spectroscopy (PL) and circular dichroism (CD) spectroscopy. The spectra are dominated by the typical and intense plasmon peak at 486 nm accompanied by a small shoulder at 540 nm. Infrared spectroscopy was measured for the free ligand and protected silver nanoclusters, where the disappearance of the S-H vibrational band (2535–2570 cm{sup −1}) in the silver nanoclusters confirmed anchoring of ligand to the cluster surface through the sulfur atom. PL studies yielded the fluorescent properties of the samples. The main focus of this work, however, lies in the chirality of the particles. For all silver clusters CD spectra were recorded. While for clusters capped with one of the two enantiomers (D- or L-form) typical CD spectra were observed, no significant signals were detected for a racemic ligand mixture. Furthermore, silver clusters show quite large asymmetry factors (up to 3 × 10{sup −4}) in comparison to most other ligand protected clusters. These large factors and bands in the visible range of the spectrum suggest a strong chiral induction from the ligand to the metal core. Textural features of the

Far field photoluminescence imaging of single AlGaN nanowire in the sub-wavelength scale using confinement of polarized light

Energy Technology Data Exchange (ETDEWEB)

Sivadasan, A.K.; Dhara, Sandip [Nanomaterials and Sensors Section, Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Homi Bhabha National Institute, Kalpakkam (India); Sardar, Manas [Theoretical Studies Section, Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

2017-03-15

Till now the nanoscale focusing and imaging in the sub-diffraction limit is achieved mainly with the help of plasmonic field enhancement by confining the light assisted with noble metal nanostructures. Using far field imaging technique, we have recorded polarized spectroscopic photoluminescence (PL) imaging of a single AlGaN nanowire (NW) of diameter ∝100 nm using confinement of polarized light. It is found that the PL from a single NW is influenced by the proximity to other NWs. The PL intensity is proportional to 1/(l x d), where l and d are the average NW length and separation between the NWs, respectively. We suggest that the proximity induced PL intensity enhancement can be understood by assuming the existence of reasonably long lived photons in the intervening space between the NWs. A nonzero non-equilibrium population of such photons may cause stimulated emission leading to the enhancement of PL emission with the intensity proportional to 1/(l x d). The enhancement of PL emission facilitates far field spectroscopic imaging of a single semiconductor AlGaN NW of sub-wavelength dimension. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Photoluminescence behaviors of single CdSe/ZnS/TOPO nanocrystals: Adsorption effects of water molecules onto nanocrystal surfaces

International Nuclear Information System (INIS)

Oda, Masaru; Hasegawa, Atsushi; Iwami, Noriya; Nishiura, Ken; Ando, Naohisa; Nishiyama, Akira; Horiuchi, Hiromi; Tani, Toshiro

2007-01-01

We report here the distinctive modifications of photoluminescence (PL) behaviors in single CdSe/ZnS/TOPO nanocrystals depending on their environments. Long-time traces of PL intensity from single nanocrystals have been obtained in both vacuum and a wet nitrogen atmosphere. While all of the nanocrystals in both environments exhibit PL blinking behaviors, i.e. on-off intermittency of PL intensity, as usual, some of the nanocrystals in the wet nitrogen atmosphere show significant increase in duration time of on-events. As for the duration time of blinking off-events, it is for the moment associated with the occasional events of carrier capturing at trap sites on or near the nanocrystal surfaces. We propose a model in which adsorbed water molecules at the trap sites on the nanocrystal surfaces transform them under light irradiation, which eventually decreases the occurrence of the trapping events due to their inactivation. It in turn increases the PL on-times. In addition to the drastic modification of the blinking profile, we also found that in the PL time traces some kinds of undulated behaviors, i.e. continuous and rather low frequency fluctuation of PL intensity, appear during each on-event in vacuum while they disappear totally in the wet nitrogen atmosphere. These results are also described on the basis of the inactivation model of the trap sites introduced above

ZnO nanorod arrays grown under different pressures and their photoluminescence properties

Energy Technology Data Exchange (ETDEWEB)

Meng Xiuqing [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China)]. E-mail: dxzhao2000@yahoo.com.cn; Shen Dezhen [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Zhang Jiying [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Li Binghui [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Wang Xiaohua [National Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and technology, 7089 Weixing Road Changchun (China); Fan Xiwu [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China)

2007-01-15

The ZnO nanorod arrays were synthesized via a simple vapor deposition method on Si (1 1 1) substrates at a low growth temperature of 520 deg. C. By selecting different source materials under different growth pressures, well-aligned hexagonal-shaped ZnO nanorod arrays were obtained under both conditions. X-ray diffraction (XRD) analysis confirmed the nanorods are c-axis orientated. Selected area electron diffraction (SAED) and transmission electron microscopy (TEM) analysis demonstrated the individual nanorod is single crystal. Photoluminescence (PL) analyses show the superior optical properties of the nanorod arrays.

ZnO nanorod arrays grown under different pressures and their photoluminescence properties

International Nuclear Information System (INIS)

Meng Xiuqing; Zhao Dongxu; Shen Dezhen; Zhang Jiying; Li Binghui; Wang Xiaohua; Fan Xiwu

2007-01-01

The ZnO nanorod arrays were synthesized via a simple vapor deposition method on Si (1 1 1) substrates at a low growth temperature of 520 deg. C. By selecting different source materials under different growth pressures, well-aligned hexagonal-shaped ZnO nanorod arrays were obtained under both conditions. X-ray diffraction (XRD) analysis confirmed the nanorods are c-axis orientated. Selected area electron diffraction (SAED) and transmission electron microscopy (TEM) analysis demonstrated the individual nanorod is single crystal. Photoluminescence (PL) analyses show the superior optical properties of the nanorod arrays

Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

Science.gov (United States)

Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Prabaswara, Aditya; Zhao, Chao; Priante, Davide; Min, Jung-Wook; Ng, Tien Khee; Ooi, Boon S.

2018-03-01

We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

KAUST Repository

Tangi, Malleswararao

2018-03-09

We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

Stretched exponential profiles of photoluminescence decays related to localized states in InGaAsN/GaAs single-quantum wells

International Nuclear Information System (INIS)

Nakayama, M.; Iguchi, Y.; Nomura, K.; Hashimoto, J.; Yamada, T.; Takagishi, S.

2007-01-01

We have investigated photoluminescence (PL) dynamics related to localized states in In x Ga 1-x As 1-y N y /GaAs single-quantum wells (SQWs) with the constant In content of x=0.32 and various N contents of y=0,0.004,and0.008. In order to determine the intrinsic band-edge energy, we used photoreflectance (PR) spectroscopy that is sensitive to the optical transitions at critical points. From systematic measurements of the PL and PR spectra, it is demonstrated that the slight incorporation of nitrogen considerably disorders the band-edge states of the InGaAsN SQWs, resulting from formation of localized states, so-called band-tail states. We find that the PL-decay profile related to the localized states generally exhibits a stretched exponential behavior peculiar to a disordered system at low temperatures, which means that randomness of alloy potential fluctuations including nitrogen dominates the PL dynamics

Photo-stability and time-resolved photoluminescence study of colloidal CdSe/ZnS quantum dots passivated in Al{sub 2}O{sub 3} using atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Cheng, Chih-Yi [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Mao, Ming-Hua, E-mail: mhmao@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2016-08-28

We report photo-stability enhancement of colloidal CdSe/ZnS quantum dots (QDs) passivated in Al{sub 2}O{sub 3} thin film using the atomic layer deposition (ALD) technique. 62% of the original peak photoluminescence (PL) intensity remained after ALD. The photo-oxidation and photo-induced fluorescence enhancement effects of both the unpassivated and passivated QDs were studied under various conditions, including different excitation sources, power densities, and environment. The unpassivated QDs showed rapid PL degradation under high excitation due to strong photo-oxidation in air while the PL intensity of Al{sub 2}O{sub 3} passivated QDs was found to remain stable. Furthermore, recombination dynamics of the unpassivated and passivated QDs were investigated by time-resolved measurements. The average lifetime of the unpassivated QDs decreases with laser irradiation time due to photo-oxidation. Photo-oxidation creates surface defects which reduces the QD emission intensity and enhances the non-radiative recombination rate. From the comparison of PL decay profiles of the unpassivated and passivated QDs, photo-oxidation-induced surface defects unexpectedly also reduce the radiative recombination rate. The ALD passivation of Al{sub 2}O{sub 3} protects QDs from photo-oxidation and therefore avoids the reduction of radiative recombination rate. Our experimental results demonstrated that passivation of colloidal QDs by ALD is a promising method to well encapsulate QDs to prevent gas permeation and to enhance photo-stability, including the PL intensity and carrier lifetime in air. This is essential for the applications of colloidal QDs in light-emitting devices.

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Electronics Department, University of Alcala, Alcala de Henares (Spain); Rigutti, Lorenzo; Julien, Francois H. [Institut d' Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay (France); Lacroix, Bertrand; Ruterana, Pierre [Centre de Recherche sur les Ions les Materiaux et la Photonique (CIMAP), UMR 6252, CNRS, ENSICAEN, CEA, UCBN, Caen (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Madrid (Spain); Monroy, Eva [CEA Grenoble, INAC/SP2M, Grenoble (France)

2012-01-15

We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperaure, explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

International Nuclear Information System (INIS)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; Rigutti, Lorenzo; Julien, Francois H.; Lacroix, Bertrand; Ruterana, Pierre; Fernandez, Susana; Monroy, Eva

2012-01-01

We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-μm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∝0.73 eV with a full width at half maximum of ∝86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∝12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∝16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Oxygen vacancy effect on photoluminescence of KNb3O8 nanosheets

Science.gov (United States)

Li, Rui; Liu, Liying; Ming, Bangming; Ji, Yuhang; Wang, Ruzhi

2018-05-01

Fungus-like potassium niobate (KNb3O8) nanosheets have been synthesized on indium-doped tin oxide (ITO) glass substrates by a simple and environmental friendly two-step hydrothermal process. The prepared samples have been characterized by using X-ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FESEM), High Resolution Transmission Electron Microscope (HRTEM), Fourier Transform Infra-Red Spectroscopy (FTIR), Raman Spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Furthermore, the photoluminescence (PL) of KNb3O8 nanosheets have been systematically studied. The results showed that the PL spectrum is between 300 and 645 nm with a 325 nm light excitation, which is divided into some sub-peaks. It is different from the perfect KNb3O8 nanosheets whose PL emission peaks located at near 433 nm. It should be originated from the effect of the oxygen (O) vacancies in the KNb3O8 nanosheets, which the PLs peaks can be found at about 490 nm and 530 nm by different position of O vacancy. The experimental results are in accordance with the first-principles calculations. Our results may present a feasible clue to estimate the defect position in KNb3O8 by the shape analysis of its spectrum of PLs.

High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

International Nuclear Information System (INIS)

Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, L.A.; Watkins, S.P.

2016-01-01

Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. Here we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I 10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I 10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I 10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn Zn double donor compensated by an unknown single acceptor.

Interdot carrier transfer in semimagnetic Pb1-xMnxSe nanocrystals embedded in oxide glass

International Nuclear Information System (INIS)

Lourenco, S.A.; Silva, R.S.; Andrade, A.A.; Dantas, N.O.

2010-01-01

Temperature- and excitation-intensity-dependent photoluminescence (PL) spectra of semimagnetic Pb 1-x Mn x Se nanocrystals embedded in glass matrix have been studied. Two types of dot families with different sizes and dispersions were identified by spectral deconvolution in Gaussian components with different full widths at half maxima values. Temperature induced carrier-transfer interdots are responsible for the sigmoidal temperature dependence of the higher PL peak energy and for anomalous enhanced photoluminescence emission efficiency, at low temperatures. The activation energy of nonradiative channel responsible for a strong thermal quenching, at T>80 K, is deduced from an Arrhenius plot of integrated PL intensity.

Effect of microwave (24 GHz) radiation treatment on impurity photoluminescence of CdTe:Cl single crystals

International Nuclear Information System (INIS)

Red'ko, R.A.; Budzulyak, S.I.; Vakhnyak, N.D.; Demchina, L.A.; Korbutyak, D.V.; Konakova, R.V.; Lotsko, A.P.; Okhrimenko, O.B.; Berezovskaya, N.I.; Bykov, Yu.V.; Egorov, S.V.; Eremeev, A.G.

2016-01-01

Effect of microwave radiation (24 GHz) on transformation of impurity-defect complexes in CdTe:Cl single crystals within the spectral range 1.3–1.5 eV was studied using the low-temperature (T=2 K) photoluminescence (PL) technique. The shapes of donor–acceptor pairs (DAP) and Y PL bands were studied in detail. The Huang–Rhys factor was calculated for the DAP luminescence depending on microwave radiation treatment. The increase of the distance between the DAP components responsible for emission at 1.455 eV and the quenching of Y-band due to microwave irradiation were observed. The method to decrease the amount of extended defects in near-surface layers of CdTe:Cl single crystals has been proposed.

Shift in room-temperature photoluminescence of low-fluence Si{sup +}-implanted SiO{sub 2} films subjected to rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Mingyue, Fu [Department of Avionics Engineering, Air Force Academy, Kangshan, Kaohsiung 820, Taiwan (China); Tsai, J -H [Department of Mathematics and Physics, Air Force Academy, Kangshan, Kaohsiung 820, Taiwan (China); Yang, C -F [Department of Chemical and Materials Engineering, National Kaohsiung University, Nan-Tzu District, Kaohsiung 811, Taiwan (China); Liao, C.-H. [Department of Physics, Chinese Military Academy, Fengshan, Kaohsiung 830, Taiwan (China)], E-mail: fumy@cc.cafa.edu.tw

2008-12-15

We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO{sub 2} films implanted by different doses of Si{sup +} ions. Room-temperature PL from 400-nm-thick SiO{sub 2} films implanted to a dose of 3x10{sup 16} cm{sup -2} shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 deg. C) and duration (5-20 s). The reported approach of implanting silicon into SiO{sub 2} films followed by RTA may be effective for tuning Si-based photonic devices.

Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots

NARCIS (Netherlands)

Fomin, V.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Koenraad, P.M.; Wolter, J.H.

2000-01-01

We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes.

Temperature-dependent photoluminescence analysis of 1-MeV electron irradiation-induced nonradiative recombination centers in GaAs/Ge space solar cells

Energy Technology Data Exchange (ETDEWEB)

Tiancheng, Yi; Pengfei, Xiao; Yong, Zheng; Juan, Tang; Rong, Wang, E-mail: wangr@bnu.edu.cn

2016-03-01

The effects of irradiation of 1-MeV electrons on p{sup +}–n GaAs/Ge solar cells have been investigated by temperature-dependent photoluminescence (PL) measurements in the temperature range of 10–290 K. The temperature dependence of the PL peak energy agrees well with the Varnish relation, and the thermal quenching of the total integrated PL intensity is well explained by the thermal quenching theory. Meanwhile, the thermal quenching of temperature-dependent PL confirmed that there are two nonradiative recombination centers in the solar cells, and the thermal activation energies of these centers are determined by Arrhenius plots of the total integrated PL intensity. Furthermore, the nonradiative recombination center, as a primary defect, is identified as the H3 hole trap located at E{sub v} + 0.71 eV at room temperature and the H2 hole trap located at E{sub v} + 0.41 eV in the temperature range of 100–200 K, by comparing the thermal activation and ionization energies of the defects.

Photoluminescence study of Dy3+ doped SrCeVO5 phosphor

International Nuclear Information System (INIS)

Suresh, K.; Dai, Ch. Vijay Anil; Murthy, K.V.R.

2016-01-01

Dy 3+ doped SrCeVO 5 phosphor was synthesized by the solid-state reaction method. Photoluminescence (PL) technique was performed to characterize the sample. The excitation spectra monitored under 520 nm and 610 nm wavelength was characterized by a broad band ranging from 220-400 nm. From the excitation spectra two main bands at 265 nm and 325 nm were observed. The PLE intensity of 520 nm monitored shows high intensity than 610 nm spectrum. The emission spectra of SrCeVO 5 phosphor under excitations at 265 nm and 325 nm exhibited main peak at 515 nm (cyan) which is a strong, intense well resolved peak with FWHM (full width at half maximum) of 130 nm is observed. This emission is mainly may be due to Ce ion but not Dy ion. The same emission under 640 and 670 nm excitations (up conversion) with good intensity was also observed. Commission international de l'eclairage (CIE) co-ordinates under these excitations revealed that this phosphor emit cyan colour and could be used for the generation of white light in display and lamp devices. (author)

Temperature-dependent photoluminescence and contactless electroreflectance characterization of a ZnxCd1-xSe/Znx'Cdy'Mg1-x'-y'Se asymmetric coupled quantum well structure

International Nuclear Information System (INIS)

Wu, J.D.; Huang, Y.S.; Lin, D.Y.; Charles, W.O.; Shen, A.; Tamargo, M.C.; Tiong, K.K.

2011-01-01

Research highlights: → We report a detailed study of a ZnxCd 1-x Se/Znx'Cdy'Mg 1-x '-y'Se asymmetric coupled quantum well structure by using temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) techniques. → The PL peak position yielded information of the fundamental excitonic recombinations. → Analysis of the CER spectra led to the identification of various interband transitions. →Study of the temperature dependence of the excitonic transition energies indicated that main influence of temperature on the quantized transitions is through temperature dependence of the constituent material band gap in the well. - Abstract: Temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) were used to characterize a Zn x Cd 1-x Se/Zn x' Cd y' Mg 1-x'-y' Se asymmetric coupled quantum well (ACQW) structure in the range of 10-300 K. The PL peak position yielded information of the fundamental excitonic recombinations. A detailed analysis of the CER spectra led to the identification of various interband transitions. The intersubband transitions were then estimated and found to be in a good agreement with the previous report of Fourier-transform infrared absorption measurements. At low temperature, the PL spectra of the sample showed an asymmetric behavior with an exponential tail at the lower-energy side and were attributed to the localized excitonic recombinations due to potential fluctuations. Detailed study of the temperature dependence of the excitonic transition energies indicated that the main influence of temperature on the quantized transitions is through the temperature dependence of the band gap of the constituent material in the well.

In situ generated CdS nanostructure induced enhanced photoluminescence from Dy{sup 3+} ions doped dielectric nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Dey, Chirantan; Karmakar, Basudeb [Glass Science and Technology Section, Glass Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata (India)

2017-08-15

We report CdS nanostructure induced enhanced photoluminescence (PL) from Dy{sup +3}:CdS co-doped dielectric-nanocomposites synthesized by the conventional melt-quench technique. CdS nanocrystals (NCs) were synthesized as in situ within the dielectric medium and their growth was controlled by heat treatment duration. Nanoparticles were investigated with absorption spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), and Raman spectroscopy. The experimentally obtained sizes of the NCs are found to increase from 5-11 nm to 50-80 nm. Bandgap enhancement for the carrier confinement was found to alter within the range of 0.20-0.38 eV. Phonon confinement effect has been confirmed by blue shifting of Raman peak for CdS NCs at 303 cm{sup -1}. Enhanced highly intense sharp PL peak at 576 nm was detected, and different parameters associated with the PL enhancement including energy transfer from CdS NCs to Dy{sup 3+} ions have been studied. This PL enhancement was steered by varying CdS NC sizes. Enhanced PL of these nanocomposites finds their potential applications as gain medium in the field of solid state lasers. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Color-tunable mixed photoluminescence emission from Alq3 organic layer in metal-Alq3-metal surface plasmon structure.

Science.gov (United States)

Chen, Nai-Chuan; Liao, Chung-Chi; Chen, Cheng-Chang; Fan, Wan-Ting; Wu, Jin-Han; Li, Jung-Yu; Chen, Shih-Pu; Huang, Bohr-Ran; Lee, Li-Ling

2014-01-01

This work reports the color-tunable mixed photoluminescence (PL) emission from an Alq3 organic layer in an Au-Alq3-Au plasmonic structure through the combination of organic fluorescence emission and another form of emission that is enabled by the surface plasmons in the plasmonic structure. The emission wavelength of the latter depends on the Alq3 thickness and can be tuned within the Alq3 fluorescent spectra. Therefore, a two-color broadband, color-tunable mixed PL structure was obtained. Obvious changes in the Commission Internationale d'Eclairage (CIE) coordinates and the corresponding emission colors of Au-Alq3-Au samples clearly varied with the Alq3 thickness (90, 130, and 156 nm).

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

Science.gov (United States)

Rosales, Daniel; Gil, Bernard; Monavarian, Morteza; Zhang, Fan; Okur, Serdal; Izyumskaya, Natalia; Avrutin, Vitaliy; Özgür, Ümit; Morkoç, Hadis

2015-03-01

We studied the temperature dependence and the recombination dynamics of the photoluminescence of (1-101)-oriented semi-polar Al0.2Ga0.8N/GaN multiple quantum wells (MQW). The polarized low-temperature PL measurements reveal that radiative recombination exhibit an anisotropic behavior. The PL intensity at room temperature is reduced by one order of magnitude with respect to low temperature. The radiative decay time exhibits a mixed behavior: it is roughly constant between 8K to ranging near 140-150K and then rapidly increases with a slope of 10 ps.K-1. This behavior is indicative of coexistence of localized excitons and free excitons which relative proportion are statistically computed.

Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

Science.gov (United States)

Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

2018-04-01

The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

Preparation of Fe(3)O(4)@C@CNC multifunctional magnetic core/shell nanoparticles and their application in a signal-type flow-injection photoluminescence immunosensor.

Science.gov (United States)

Chu, Chengchao; Li, Meng; Li, Long; Ge, Shenguang; Ge, Lei; Yu, Jinghua; Yan, Mei; Song, Xianrang

2013-11-01

We describe here the preparation of carbon-coated Fe3O4 magnetic nanoparticles that were further fabricated into multifunctional core/shell nanoparticles (Fe3O4@C@CNCs) through a layer-by-layer self-assembly process of carbon nanocrystals (CNCs). The nanoparticles were applied in a photoluminescence (PL) immunosensor to detect the carcinoembryonic antigen (CEA), and CEA primary antibody was immobilized onto the surface of the nanoparticles. In addition, CEA secondary antibody and glucose oxidase were covalently bonded to silica nanoparticles. After stepwise immunoreactions, the immunoreagent was injected into the PL cell using a flow-injection PL system. When glucose was injected, hydrogen peroxide was obtained because of glucose oxidase catalysis and quenched the PL of the Fe3O4@C@CNC nanoparticles. The here proposed PL immunosensor allowed us to determine CEA concentrations in the 0.005–50 ng·mL-1 concentration range, with a detection limit of 1.8 pg·mL-1.

Enhancement of field emission and photoluminescence properties of graphene-SnO2 composite nanostructures.

Science.gov (United States)

Ding, Jijun; Yan, Xingbin; Li, Jun; Shen, Baoshou; Yang, Juan; Chen, Jiangtao; Xue, Qunji

2011-11-01

In this study, the SnO(2) nanostructures and graphene-SnO(2) (G-SnO(2)) composite nanostructures were prepared on n-Si (100) substrates by electrophoretic deposition and magnetron sputtering techniques. The field emission of SnO(2) nanostructures is improved largely by depositing graphene buffer layer, and the field emission of G-SnO(2) composite nanostructures can also further be improved by decreasing sputtering time of Sn nanoparticles to 5 min. The photoluminescence (PL) spectra of the SnO(2) nanostructures revealed multipeaks, which are consistent with previous reports except for a new peak at 422 nm. Intensity of six emission peaks increased after depositing graphene buffer layer. Our results indicated that graphene can also be used as buffer layer acting as interface modification to simultaneity improve the field emission and PL properties of SnO(2) nanostructures effectively.

Photoluminescence properties of perovskite multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

2016-07-01

Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

Interfacial Charge-Carrier Trapping in CH3NH3PbI3-Based Heterolayered Structures Revealed by Time-Resolved Photoluminescence Spectroscopy.

Science.gov (United States)

Yamada, Yasuhiro; Yamada, Takumi; Shimazaki, Ai; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

2016-06-02

The fast-decaying component of photoluminescence (PL) under very weak pulse photoexcitation is dominated by the rapid relaxation of the photoexcited carriers into a small number of carrier-trapping defect states. Here, we report the subnanosecond decay of the PL under excitation weaker than 1 nJ/cm(2) both in CH3NH3PbI3-based heterostructures and bare thin films. The trap-site density at the interface was evaluated on the basis of the fluence-dependent PL decay profiles. It was found that high-density defects determining the PL decay dynamics are formed near the interface between CH3NH3PbI3 and the hole-transporting Spiro-OMeTAD but not at the CH3NH3PbI3/TiO2 interface and the interior regions of CH3NH3PbI3 films. This finding can aid the fabrication of high-quality heterointerfaces, which are required improving the photoconversion efficiency of perovskite-based solar cells.

Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

Directory of Open Access Journals (Sweden)

Qi Wang

2013-07-01

Full Text Available In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM of only 29.5 meV. In addition, a slight blue-shift (∼18 meV of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( 40%, the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.

Origin of blue photoluminescence from colloidal silicon nanocrystals fabricated by femtosecond laser ablation in solution.

Science.gov (United States)

Hao, H L; Wu, W S; Zhang, Y; Wu, L K; Shen, W Z

2016-08-12

We present a detailed investigation into the origin of blue emission from colloidal silicon (Si) nanocrystals (NCs) fabricated by femtosecond laser ablation of Si powder in 1-hexene. High resolution transmission electron microscopy and Raman spectroscopy observations confirm that Si NCs with average size 2.7 nm are produced and well dispersed in 1-hexene. Fourier transform infrared spectrum and x-ray photoelectron spectra have been employed to reveal the passivation of Si NCs surfaces with organic molecules. On the basis of the structural characterization, UV-visible absorption, temperature-dependent photoluminescence (PL), time-resolved PL, and PL excitation spectra investigations, we deduce that room-temperature blue luminescence from colloidal Si NCs originates from the following two processes: (i) under illumination, excitons first form within colloidal Si NCs by direct transition at the X or Γ (Γ25 → Γ'2) point; (ii) and then some trapped excitons migrate to the surfaces of colloidal Si NCs and further recombine via the surface states associated with the Si-C or Si-C-H2 bonds.

Enhanced photoluminescence in transparent thin films of polyaniline–zinc oxide nanocomposite prepared from oleic acid modified zinc oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Sajimol Augustine, M., E-mail: sajimollazar@gmail.com [Department of Physics, St. Teresa' s College, Kochi-11, Kerala (India); Jeeju, P.P.; Varma, S.J.; Francis Xavier, P.A. [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India); Jayalekshmi, S., E-mail: lakshminathcusat@gmail.com [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India)

2014-07-01

Oleic acid capped zinc oxide (ZnO) nanoparticles have been synthesized by a wet chemical route. The chemical oxidative method is employed to synthesize polyaniline (PANI) and PANI/ZnO nanocomposites doped with four different dopants such as orthophosphoric acid (H{sub 3}PO{sub 4}), hydrochloric acid (HCl), naphthalene-2-sulphonic acid and camphor sulphonic acid (CSA). The samples have been structurally characterized by X-ray diffraction (XRD), field emission scanning electron microscopy and Fourier transform infrared (FT-IR) spectroscopic techniques. A comparison of the photoluminescence (PL) emission intensity of PANI and PANI/ZnO nanocomposites is attempted. The enhanced PL intensity in PANI/ZnO nanocomposites is caused by the presence of nanostructured and highly fluorescent ZnO in the composites. It has been observed that, among the composites, the H{sub 3}PO{sub 4} doped PANI/ZnO nanocomposite is found to exhibit the highest PL intensity because of the higher extent of (pi) conjugation and the more orderly arrangement of the benzenoid and quinonoid units. In the present work, transparent thin films of PANI and PANI/ZnO nanocomposite for which PL intensity is found to be maximum, have been prepared after re-doping with CSA by the spin-coating technique. The XRD pattern of the PANI/ZnO film shows exceptionally good crystallanity compared to that of pure PANI, which suggests that the addition of ZnO nanocrystals helps in enhancing the crystallanity of the PANI/ZnO nanocomposite. There is a significant increase in the PL emission intensity of the PANI/ZnO nanocomposite film making it suitable for the fabrication of optoelectronic devices. - Highlights: • Oleic acid capped zinc oxide nanoparticles are synthesized by wet chemical method. • Polyaniline/zinc oxide nanocomposites are prepared by in-situ polymerization. • Polyaniline and polyaniline/zinc oxide thin films are deposited using spin-coating. • Enhanced photoluminescence is observed in polyaniline

Stokes and anti-Stokes photoluminescence towards five different In-x(Al0.17Ga0.83)(1-x)As/Al0.17Ga0.83As quantum wells

DEFF Research Database (Denmark)

Machida, S.; Tadakuma, T.; Satake, A.

2005-01-01

Stokes and anti-Stokes photoluminescence (AS-PL) has been investigated in a step-graded Inx(Al0.17Ga0.83)1–xAs/Al0.17Ga0.83As quantum-well (QW) heterostructure consisting of five QWs with different x values. Stokes PL spectra of this sample show a significant difference in PL intensity between...... the wells under indirect excitation conditions due to the existence of competitive resonant and nonresonant capture processes, while they exhibit a rather uniform PL intensity distribution under direct excitation. When the excitation wavelength is tuned to 810 nm for AS-PL detection, it is transparent...... is basically determined by the competitive capture of photoexcited carriers through the thick barriers, generated far from the five wells due to the nonlinear excitation processes in GaAs. ©2005 American Institute of Physics...

Structural and photoluminescence investigations of Sm{sup 3+} doped BaY{sub 2}ZnO{sub 5} nanophosphors

Energy Technology Data Exchange (ETDEWEB)

Chahar, Sangeeta; Taxak, V.B.; Dalal, Mandeep; Singh, Sonika; Khatkar, S.P., E-mail: s_khatkar@rediffmail.com

2016-05-15

Highlights: • BaY{sub 2(1−x)}Sm{sub 2x}ZnO{sub 5} nanophosphors have been synthesized via solution combustion. • The nanophosphors have been characterized by XRD, TEM and PL spectroscopy. • The crystal structure reveals influence of doping on lattice parameters. • This nanophosphor executes orange–red emission under near UV excitation. - Abstract: BaY{sub 2}ZnO{sub 5}:Sm{sup 3+} nanophosphor was successfully synthesized using solution combustion process. XRD and photoluminescence (PL) techniques were used to analyze the structural and photoluminescence properties. Morphological study of the thermally stable powder was carried out using transmission electron microscope (TEM). Rietveld refinement technique has been used to analyze the samples qualitatively as well as quantitatively. X-Ray diffraction analysis confirms that the highly crystalline single phased Sm{sup 3+} doped BaY{sub 2}ZnO{sub 5} nanophosphor crystallizes in orthorhombic lattice with Pbnm space group. The average particle size lies in the range 80–90 nm with spherical morphology. The photoluminescence excitation at 411 nm yields an intense orange–red emission centered at 610 nm due to {sup 4}G{sub 5/2}–{sup 6}H{sub 7/2} transition. The concentration dependent luminescent behavior of BaY{sub 2(1−x)}Sm{sub 2x}ZnO{sub 5} nanophosphor shows that the optimum concentration for best luminescence is 3 mol%. These results indicate that these nanophosphors find potential applications in the field of phosphor-converted white LED systems.

Effect of annealing temperature on the structural, photoluminescence and magnetic properties of sol-gel derived Magnetoplumbite-type (M-type) hexagonal strontium ferrite

International Nuclear Information System (INIS)

Teh, Geok Bee; Wong, Yat Choy; Tilley, Richard D.

2011-01-01

Magnetoplumbite-type (M-type) hexagonal strontium ferrite particles were synthesized via sol-gel technique employing ethylene glycol as the gel precursor at two different calcination temperatures (800 and 1000 deg. C). Structural properties were systematically investigated via X-ray diffraction (XRD), field emission scanning electron microscopy, high resolution transmission electron microscopy (HRTEM), energy dispersive spectroscopy (EDS), thermogravimetric analysis (TGA), photoluminescence spectrophotometry and superconducting quantum interference device magnetometer. XRD results showed that the sample synthesized at 1000 deg. C was of single-phase with a space group of P6 3 /mmc and lattice cell parameter values of a=5.882 A and c=23.048 A. EDS confirmed the composition of strontium ferrite calcined at 1000 deg. C being mainly of M-type SrFe 12 O 19 with HRTEM micrographs confirming the ferrites exhibiting M-type long range ordering along the c-axis of the crystal structure. The photoluminescence (PL) property of strontium ferrite was examined at excitation wavelengths of 260 and 270 nm with significant PL emission peaks centered at 350 nm being detected. Strontium ferrite annealed at higher temperature (1000 deg. C) was found to have grown into larger particle size, having higher content of oxygen vacancies and exhibited 83-85% more intense PL. Both the as-prepared strontium ferrites exhibited significant oxygen vacancies defect structures, which were verified via TGA. Higher calcination temperature turned strontium ferrite into a softer ferrite. - Highlights: → High annealing temperature produced M-type ferrite with higher oxygen vacancies. → Photoluminescence intensity is proportional to the existence of oxygen vacancies. → XRD data showed cell contraction well suited to the change of oxygen vacancies. → Shift in hysteresis loop due to defect-induced exchange bias was observed.

Effect of annealing temperature on the structural, photoluminescence and magnetic properties of sol-gel derived Magnetoplumbite-type (M-type) hexagonal strontium ferrite

Energy Technology Data Exchange (ETDEWEB)

Teh, Geok Bee, E-mail: sharonteh2009@gmail.com [Division of Bioscience and Chemistry, School of Arts and Science, Tunku Abdul Rahman College, Jalan Genting Kelang, 53300 Kuala Lumpur (Malaysia); Wong, Yat Choy [Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, PO Box 218, Hawthorn, Victoria 3122 (Australia); Tilley, Richard D. [School of Chemical and Physical Sciences, MacDiarmid Institute of Advanced Materials and Nanotechnology, Victoria University of Wellington, PO Box 600, Wellington (New Zealand)

2011-09-15

Magnetoplumbite-type (M-type) hexagonal strontium ferrite particles were synthesized via sol-gel technique employing ethylene glycol as the gel precursor at two different calcination temperatures (800 and 1000 deg. C). Structural properties were systematically investigated via X-ray diffraction (XRD), field emission scanning electron microscopy, high resolution transmission electron microscopy (HRTEM), energy dispersive spectroscopy (EDS), thermogravimetric analysis (TGA), photoluminescence spectrophotometry and superconducting quantum interference device magnetometer. XRD results showed that the sample synthesized at 1000 deg. C was of single-phase with a space group of P6{sub 3}/mmc and lattice cell parameter values of a=5.882 A and c=23.048 A. EDS confirmed the composition of strontium ferrite calcined at 1000 deg. C being mainly of M-type SrFe{sub 12}O{sub 19} with HRTEM micrographs confirming the ferrites exhibiting M-type long range ordering along the c-axis of the crystal structure. The photoluminescence (PL) property of strontium ferrite was examined at excitation wavelengths of 260 and 270 nm with significant PL emission peaks centered at 350 nm being detected. Strontium ferrite annealed at higher temperature (1000 deg. C) was found to have grown into larger particle size, having higher content of oxygen vacancies and exhibited 83-85% more intense PL. Both the as-prepared strontium ferrites exhibited significant oxygen vacancies defect structures, which were verified via TGA. Higher calcination temperature turned strontium ferrite into a softer ferrite. - Highlights: > High annealing temperature produced M-type ferrite with higher oxygen vacancies. > Photoluminescence intensity is proportional to the existence of oxygen vacancies. > XRD data showed cell contraction well suited to the change of oxygen vacancies. > Shift in hysteresis loop due to defect-induced exchange bias was observed.

Study on the fabrication and photoluminescence characteristics of LiPO3 glass scintillators with the lanthanides activators

International Nuclear Information System (INIS)

Jeong, S. Z.; Lee, J. M.; Hwang, J. H.; Choi, S. H.

2001-01-01

In this syudy, LiPO 3 glass scintillators were fabricated, and lanthanides (except Pm) oxides or chlorides were used as an activator. For the fabrication of LiPO 3 glasses, optimum heating conditions were obtained, and the photoluminescence of the glasses was measured by the monochromator. For the best transparency of the glass samples, optimum heating temperature and time is 950 .deg. C and 90 min, respectively. As the result of photoluminescence analysis, it was impossible to apply Pr, Nd, Gd, Ho, Er, Tm, Yb, and Lu to activator. Because emission spectrum of samples with them was equal to that of sample without activator. In case of samples with Europium, the peak of emission spectrum of Eu(II) and Eu(III) is 420 nm and 620 nm, separately. And Samples with Ce(III) are about 380 nm, and Tb(III) are about 550 nm. On the fabrication of LiPO 3 glass samples, PL intensity was increased by adding sugar as reductant, and using Ar reduction atmosphere. And the optimum reduction conditions were differed as to the kinds of activators. Samples with Eu(II) and Tb(III) have the best PL intensity in the Ar reduction atmosphere, and sample with Ce(III) have the best intensity by added sugar

Photoluminescence and photostability of YVO{sub 4}:Eu{sup 3+} nanoparticle/layered double hydroxide multilayer films prepared via layer-by-layer assembly

Energy Technology Data Exchange (ETDEWEB)

Onishi, Wataru; Takeshita, Satoru, E-mail: takeshita@applc.keio.ac.jp; Iso, Yoshiki; Isobe, Tetsuhiko, E-mail: isobe@applc.keio.ac.jp

2016-07-15

Layered double hydroxides (LDHs) consist of positively charged brucite-like layers with interlayer anions for charge compensation. Delaminated cationic LDH nanosheets can be used as building blocks to fabricate functional nanocomposites. In this study, we fabricated photoluminescent multilayer films containing positively charged LDH nanosheets and negatively charged YVO{sub 4}:Eu{sup 3+} nanoparticles on quartz glass substrates through a layer-by-layer assembly technique. The absorbance and photoluminescence (PL) intensity of the YVO{sub 4}:Eu{sup 3+} nanoparticles in the multilayer films were proportional to the number of deposition cycles. These linear relationships indicate that constant amounts of LDH nanosheets and YVO{sub 4}:Eu{sup 3+} nanoparticles were alternately deposited on the substrate. The change in intensity of the 620 nm emission of the YVO{sub 4}:Eu{sup 3+} nanoparticle powder and the multilayer film (LDH/YVO{sub 4}:Eu{sup 3+}){sub 10} under continuous 270 nm excitation was measured to compare both photostabilities. The PL intensity of the YVO{sub 4}:Eu{sup 3+} nanoparticle powder decreased to 7% of the initial intensity and then gradually recovered to 19%. In contrast, the PL intensity of the multilayer film (LDH/YVO{sub 4}:Eu{sup 3+}){sub 10} decreased to 36% of the initial intensity and then recovered to 139%. The photo-degradation and recovery are discussed.

Photoluminescence characteristics of sintered silica glass doped with Cu ions using mesoporous SiO{sub 2}-PVA nanocomposite

Energy Technology Data Exchange (ETDEWEB)

Ikeda, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Murata, Takahiro [Faculty of Education and Master' s Course in Education, Kumamoto University, 2-40-1 Kurokami, Chuo-ku, Kumamoto 860-8555 (Japan); Fujino, Shigeru, E-mail: fujino@astec.kyushu-u.ac.jp [Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

2015-07-15

Monolithic silica glasses doped with Cu ions were prepared by immersing a mesoporous SiO{sub 2}-polyvinyl alcohol (PVA) nanocomposite in a copper nitrate solution followed by sintering at 1100 °C for 12 h in air. The Cu ions were reduced from divalent to monovalent during the sintering process and consequently Cu{sup +} was doped into the silica glass matrix. The sintered glass possessed blue or yellow photoluminescence (PL) under UV irradiation, depending on the total concentration of Cu ions in the sintered silica glass. At a lower concentration below 30 ppm, the isolated Cu{sup +} existed in the glass matrix resulting in the blue PL. However, above 70 ppm, the Cu{sup +}–Cu{sup +} pairs were present, exhibiting the yellow PL. It was demonstrated that the PL characteristics of the sintered silica glasses doped with monovalent copper ions were affected by the total concentration of Cu ions in the glass, which can be adjusted as a function of the immersion conditions. - Highlights: • Silica glass doped with Cu{sup +} was fabricated by sintering the nanocomposite. • The Cu ions were reduced from divalent to monovalent during the sintering process. • The sintered glass possessed blue or yellow PL under UV irradiation. • The blue and yellow PL are due to isolated Cu{sup +} and Cu{sup +}–Cu{sup +} pairs, respectively. • The PL characteristics depended on the total concentration of Cu ions in the glass.

Substituent effects on the redox states of locally functionalized single-walled carbon nanotubes revealed by in situ photoluminescence spectroelectrochemistry.

Science.gov (United States)

Shiraishi, Tomonari; Shiraki, Tomohiro; Nakashima, Naotoshi

2017-11-09

Single-walled carbon nanotubes (SWNTs) with local chemical modification have been recognized as a novel near infrared (NIR) photoluminescent nanomaterial due to the emergence of a new red-shifted photoluminescence (PL) with enhanced quantum yields. As a characteristic feature of the locally functionalized SWNTs (lf-SWNTs), PL wavelength changes occur with the structural dependence of the substituent structures in the modified aryl groups, showing up to a 60 nm peak shift according to an electronic property difference of the aryl groups. Up to now, however, the structural effect on the electronic states of the lf-SWNTs has been discussed only on the basis of theoretical calculations due to the very limited amount of modifications. Herein, we describe the successfully-determined electronic states of the aryl-modified lf-SWNTs with different substituents (Ar-X SWNTs) using an in situ PL spectroelectrochemical method based on electrochemical quenching of the PL intensities analyzed by the Nernst equation. In particular, we reveal that the local functionalization of (6,5)SWNTs induced potential changes in the energy levels of the HOMO and the LUMO by -23 to -38 meV and +20 to +22 meV, respectively, compared to those of the pristine SWNTs, which generates exciton trapping sites with narrower band gaps. Moreover, the HOMO levels of the Ar-X SWNTs specifically shift in a negative potential direction by 15 meV according to an enhancement of the electron-accepting property of the substituents in the aryl groups that corresponds to an increase in the Hammet substituent constants, suggesting the importance of the dipole effect from the aryl groups on the lf-SWNTs to the level shift of the frontier orbitals. Our method is a promising way to characterize the electronic features of the lf-SWNTs.

Optical Absorption and Visible Photoluminescence from Thin Films of Silicon Phthalocyanine Derivatives

Directory of Open Access Journals (Sweden)

Arturo Rodríguez Gómez

2014-09-01

Full Text Available The interest of microelectronics industry in new organic compounds for the manufacture of luminescent devices has increased substantially in the last decade. In this paper, we carried out a study of the usage feasibility of three organic bidentate ligands (2,6-dihydroxyanthraquinone, anthraflavic acid and potassium derivative salt of anthraflavic acid for the synthesis of an organic semiconductor based in silicon phthalocyanines (SiPcs. We report the visible photoluminescence (PL at room temperature obtained from thermal-evaporated thin films of these new materials. The surface morphology of these films was analyzed by atomic force microscopy (AFM and scanning electron microscopy (SEM. AFM indicated that the thermal evaporation technique is an excellent resource in order to obtain low thin film roughness when depositing these kinds of compounds. Fourier transform infrared spectroscopy (FTIR spectroscopy was employed to investigate possible changes in the intra-molecular bonds and to identify any evidence of crystallinity in the powder compounds and in the thin films after their deposition. FTIR showed that there was not any important change in the samples after the thermal deposition. The absorption coefficient (α in the absorption region reveals non-direct transitions. Furthermore, the PL of all the investigated samples were observed with the naked eye in a bright background and also measured by a spectrofluorometer. The normalized PL spectra showed a Stokes shift ≈ 0.6 eV in two of our three samples, and no PL emission in the last one. Those results indicate that the Vis PL comes from a recombination of charge carriers between conduction band and valence band preceded by a non-radiative relaxation in the conduction band tails.

Spatially resolved photoluminescence and AFM measurements on Cu(In,Ga)Se{sub 2}-based thin film absorbers prepared with different throughput speeds

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Meessen, Max; Neumann, Oliver; Heise, Stephan J.; Brueggemann, Rudolf; Bauer, Gottfried H. [Institut fuer Physik, Carl von Ossietzky Universitaet Oldenburg (Germany); Witte, Wolfram; Hariskos, Dimitrios [Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung Baden-Wuerttemberg (ZSW), Stuttgart (Germany)

2011-07-01

We study the behavior and interdependence of quantities such as photoluminescence (PL) yield, quasi-Fermi level splitting and AFM-determined surface roughness on CIGS thin-film absorbers with different thicknesses between 0.25 and 3 {mu}m achieved by varying the throughput speed in an in-line physical vapor deposition (PVD) process. These quantities are studied on the macroscopic as well as on the microscopic scale with a resolution of approximately 1 {mu}m. It is shown that the structural sizes of the inhomogeneities of the absorber layer itself and its lateral photoluminescence properties decrease with decreasing absorber thickness. These results are compared to those on samples thinned by bromine-methanol etching. Furthermore, we show that varying the thickness of the CdS buffer layer on top of the absorber influences surface recombination and thereby PL yield and quasi-Fermi level splitting. A decrease in surface recombination at higher buffer thicknesses has to be weighed against the increase in absorption in the buffer layer, which in turn decreases carrier generation in the absorber layer.

Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Kong, Lingmin, E-mail: konglm@qq.com [School of Marine Science and Technology, Zhejiang Ocean University, Zhoushan 316000 (China); Sun, Wei [SEM School of Electromechanical Engineering, Weifang Engineering Vocational College, Qingzhou 262500 (China); Feng, Zhe Chuan, E-mail: zcfeng@nut.edu.tw [Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan (China); Xie, Sheng [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian [Department of Physics, Zhejiang Ocean University, Zhoushan 316000 (China); Wu, Zhengyun [Department of Physics, Xiamen University, Xiamen 361005 China (China)

2014-07-01

Two kinds of self-assembled quantum dots (QDs) embedded within InGaAs/GaAs quantum wells were grown by molecular beam epitaxy: one was capped with an InAlAs strain reducing (SR) layer, while the other was not. Their emission dynamics was investigated by time-resolved and temperature dependent (TD) photoluminescence (PL) measurements. A significant redshift can be observed in the emission peak position of InAs QDs with thin InAlAs SR cap layer, which results from SR effects. Different behaviors of the integrated PL intensity for the samples with or without InAlAs layer may be ascribed to the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer, and the TD mode of carrier migration. The PL decay time of quantum dots grown with InAlAs layer was much longer than that without the layer, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. These observations are discussed from the viewpoint of strain compensation and potential barrier variation with SR layers. Our experiments also demonstrate that the main mode of carrier migration is quantum tunneling effect at lower temperature, while it is quantum transition at higher temperature. The results demonstrate the importance of InAlAs SR layer for the optical quality of InAs QDs. - Highlights: • InAs quantum dots (QDs) were grown on GaAs. • A thin InAlAs layer was grown on InAs QDs. • Temperature dependent photoluminescence (PL) and time-resolved PL were carried out. • Both a redshift and a double exponential decay of PL emission were generated by the InAlAs layer.

Investigation of the photoluminescence properties of thermochemically synthesized CdS nanocrystals

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M. Molaei

2011-03-01

Full Text Available In this work we have synthesized CdS nanocrystals with thermochemical method. CdSO4 and Na2S2O3 were used as the precursors and thioglycolic acid (TGA was used as capping agent molecule. The structure and optical property of the nanocrystals were characterized by means of XRD, TEM, UV-visible optical spectroscopy and photoluminescence (PL. X-ray diffraction (XRD and TEM analyses demonstrated hexagonal phase CdS nanocrystals with an average size around 2 nm. Synthesized nanocrystals exhibited band gap of about 3.2 eV and showed a broad band emission from 400-750 nm centered at 504 nm with a (0.27, 0.39 CIE coordinate. This emission can be attributed to recombination of an electron in conduction band with a hole trapped in Cd vacancies near to the valance band of CdS. The best attained photoluminescence quantum yield of the nanocrystals was about 12%, this amount is about 20 times higher than that for thioglycerol (TG capped CdS nanocrystals.

Ce3+-Doping to Modulate Photoluminescence Kinetics for Efficient CsPbBr3 Nanocrystals Based Light-Emitting Diodes.

Science.gov (United States)

Yao, Ji-Song; Ge, Jing; Han, Bo-Ning; Wang, Kun-Hua; Yao, Hong-Bin; Yu, Hao-Lei; Li, Jian-Hai; Zhu, Bai-Sheng; Song, Ji-Zhong; Chen, Chen; Zhang, Qun; Zeng, Hai-Bo; Luo, Yi; Yu, Shu-Hong

2018-03-14

Inorganic perovskite CsPbBr 3 nanocrystals (NCs) are emerging, highly attractive light emitters with high color purity and good thermal stability for light-emitting diodes (LEDs). Their high photo/electroluminescence efficiencies are very important for fabricating efficient LEDs. Here, we propose a novel strategy to enhance the photo/electroluminescence efficiency of CsPbBr 3 NCs through doping of heterovalent Ce 3+ ions via a facile hot-injection method. The Ce 3+ cation was chosen as the dopant for CsPbBr 3 NCs by virtue of its similar ion radius and formation of higher energy level of conduction band with bromine in comparison with the Pb 2+ cation to maintain the integrity of perovskite structure without introducing additional trap states. It was found that by increasing the doping amount of Ce 3+ in CsPbBr 3 NCs to 2.88% (atomic percentage of Ce compared to Pb) the photoluminescence quantum yield (PLQY) of CsPbBr 3 NCs reached up to 89%, a factor of 2 increase in comparison with the native, undoped ones. The ultrafast transient absorption and time-resolved photoluminescence (PL) spectroscopy revealed that Ce 3+ -doping can significantly modulate the PL kinetics to enhance the PL efficiency of doped CsPbBr 3 NCs. As a result, the LED device fabricated by adopting Ce 3+ -doped CsPbBr 3 NCs as the emitting layers exhibited a pronounced improvement of electroluminescence with external quantum efficiency (EQE) from 1.6 to 4.4% via Ce 3+ -doping.

Effect of lead salts on phase, morphologies and photoluminescence of nanocrystalline PbMoO4 and PbWO4 synthesized by microwave radiation

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Phuruangrat Anukorn

2016-09-01

Full Text Available PbMoO4 and PbWO4 were successfully synthesized by microwave radiation using different lead salts (acetate, chloride, nitrate and sulfate and Na2MO4 (M = Mo, W in propylene glycol. The products were characterized by X-ray diffraction (XRD, scanning and transmission electron microscopy (SEM, TEM, Fourier transform infrared (FT-IR, Raman spectroscopy and photoluminescence (PL spectroscopy. In this research, morphologies, crystallization and photoluminescence of the products were influenced by the kinetics of anions, including the detection of M–O (M = Mo, W stretching modes in the (MO42− tetrahedrons. Photoluminescence of PbMoO4 synthesized from Pb(NO32 and of PbWO4 synthesized from PbCl2 showed the strongest blue emission due to the electronic diffusion in tetrahedrons at room temperature.

Photoluminescence of rare-earth-doped Ca{sub 4}Ga{sub 2}S{sub 7}; Fotolyuminestsentsiya Ca{sub 4}Ga{sub 2}S{sub 7}:RZEh

Energy Technology Data Exchange (ETDEWEB)

Tagiev, B G; Tagiev, O B; Dzhabbarov, R B; Musaeva, N N; Kasumov, U F [Inst. Fiziki im. G.M. Abdullaeva AN Azerbajdzhana, Baku (Azerbaijan)

2001-12-01

One obtained Ca{sub 4}Ga{sub 2}S{sub 7}:REM crystals and studied their photoluminescent (PL) properties. One used Nd, Ce, Pr and Tb as promoters. It is shown that in all investigated crystals one observed PL intensity maximums at {lambda} 543 nm that result from intracentre transitions of Nd{sup 3+} ions. The excitation energy is effectively transferred nonradiatingly from Ce{sup 3+}, Pr{sup 3+}, Tb{sup 3+} ions to Nd{sup 3+} ion. In the case, Ce{sup 3+}, Pr{sup 3+}, Tb{sup 3+} are the effective ions-sensitizers.

Optical properties of ion-implanted InP and GaAs: Selectivity-excited photoluminescence spectra

International Nuclear Information System (INIS)

Makita, Yunosuke; Yamada, Akimasa; Kimura, Shinji; Niki, Shigeru; Yoshinaga, Hiroshi; Matsumori, Tokue; Iida, Tsutomu; Uekusa, Ichiro

1993-01-01

Implantation of Mg+ ions was carried out into high purity InP grown by liquid encapsulated Czochralski method. Mg+ ion-implanted InP presented the formation of plural novel emissions with increasing Mg concentration, [Mg] in the low temperature photoluminescence spectra. Selectively-excited photoluminescence (SPL) measurements were made to examine the features of two-hole replicas pertinent to the emissions of excitons bound to neutral Mg and residual Zn acceptors. Systematic variation of the emission intensities from the two types of two-hole replicas was found to be utilized for the evaluation of ion-implanted materials. The significant discrepancy of emission spectra between PL and SPL was attributed to the difference of the depth examined by using the excitation light with high and low absorption coefficient. The results revealed that the diffusion of ion-implanted Mg is extremely enhanced when [Mg] exceeds 1x10 17 cm -3

On the origin of fine structure in the photoluminescence spectra of the β-sialon:Eu2+ green phosphor

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Kohsei Takahashi, Ken-ichi Yoshimura, Masamichi Harada, Yoshitaka Tomomura, Takashi Takeda, Rong-Jun Xie and Naoto Hirosaki

2012-01-01

Full Text Available The photoluminescence (PL and PL excitation (PLE spectra of Si6−zAlzOzN8−z (β-sialon:Eu2+ phosphors with small z values (z=0.025–0.24 were studied at room temperature and 6 K. The PL and PLE spectra exhibit fine structure with the PL lines being as sharp as 45–55 nm even at room temperature; this fine structure was enhanced by decreasing the z value. These results can be used for expanding the color gamut of liquid crystal displays, particularly in the blue–green region. From low-temperature measurements, the fine PLE structure was ascribed to discrete energy levels of 7FJ states. The 4f65d excited states of Eu2+ are considered to be localized near the 4f orbital. This is because the bonding of Eu2+ with surrounding atoms is ionic rather than covalent. Lattice phonon absorptions were also observed in the PLE spectrum, revealing that the optically active Eu2+ ions are located in the β-sialon crystal. The PL spectrum of the sample with the smallest z value (0.025 consists of a sharp zero-phonon line and lattice phonon replicas, which results in a sharp and asymmetric spectral shape.

Photoluminescence studies on holmium (III) and praseodymium (III) doped calcium borophosphate (CBP) phosphors

Science.gov (United States)

Reddy Prasad, V.; Damodaraiah, S.; Devara, S. N.; Ratnakaram, Y. C.

2018-05-01

Using solid state reaction method, Ho3+ and Pr3+ doped calcium borophosphate (CBP) phosphors were prepared. These phosphors were characterized using XRD, SEM, FT-IR, 31P solid state NMR, photoluminescence (PL) and decay profiles. Structural details were discussed from XRD and FT-IR spectra. From 31P NMR spectra of these phosphors, mono-phosphate complexes Q0-(PO43-) were observed. Photoluminescence spectra were measured for both Ho3+ and Pr3+ doped calcium borophosphate phosphors and the spectra were studied for different concentrations. Decay curves were obtained for the excited level, 5F4+5S2 of Ho3+ and 1D2 level of Pr3+ in these calcium borophosphate phosphors and lifetimes were measured. CIE color chromaticity diagrams are drawn for these two rare earth ions in calcium borophosphate phosphors. Results show that Ho3+ and Pr3+ doped CBP phosphors might be served as green and red luminescence materials.

Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films

International Nuclear Information System (INIS)

Sel, Kıvanç; Güneş, İbrahim

2012-01-01

Room temperature photoluminescence (PL) spectrum of hydrogenated amorphous silicon carbide (a-SiC x :H) thin films was modeled by a joint density of tail states approach. In the frame of these analyses, the density of tail states was defined in terms of empirical Gaussian functions for conduction and valance bands. The PL spectrum was represented in terms of an integral of joint density of states functions and Fermi distribution function. The analyses were performed for various values of energy band gap, Fermi energy and disorder parameter, which is a parameter that represents the width of the energy band tails. Finally, the model was applied to the measured room temperature PL spectra of a-SiC x :H thin films deposited by plasma enhanced chemical vapor deposition system, with various carbon contents, which were determined by X-ray photoelectron spectroscopy measurements. The energy band gap and disorder parameters of the conduction and valance band tails were determined and compared with the optical energies and Urbach energies, obtained by UV–Visible transmittance measurements. As a result of the analyses, it was observed that the proposed model sufficiently represents the room temperature PL spectra of a-SiC x :H thin films. - Highlights: ► Photoluminescence spectra (PL) of the films were modeled. ► In the model, joint density of tail states and Fermi distribution function are used. ► Various values of energy band gap, Fermi energy and disorder parameter are applied. ► The model was applied to the measured PL of the films. ► The proposed model represented the room temperature PL spectrum of the films.

Low-temperature synthesis of Zn{sub 2}SiO{sub 4}:Mn green photoluminescence phosphor

Energy Technology Data Exchange (ETDEWEB)

Sivakumar, V. [Saveetha Engineering College, Thandalam, Chennai 602105 (India); Lakshmanan, Arunachalam, E-mail: arunachalamlakshmanan@yahoo.com [Saveetha Engineering College, Thandalam, Chennai 602105 (India); Kalpana, S.; Sangeetha Rani, R.; Satheesh Kumar, R. [Saveetha Engineering College, Thandalam, Chennai 602105 (India); Jose, M.T. [Radiological Safety Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

2012-08-15

Zn{sub 2}SiO{sub 4}:Mn green phosphor having comparable photoluminescence (PL) efficiency with commercial phosphor has been synthesized at 1000 Degree-Sign C using solid state reactions involving ZnO, silicic acid and manganese acetate. The water of crystallization attached to SiO{sub 2} in silicic acid whose dissociation at 1000 Degree-Sign C seem to promote the sintering efficiency of Zn{sub 2}SiO{sub 4}:Mn. Incremental ZnO addition and re-firing at 1000 Degree-Sign C promote the diffusion rate of ZnO and SiO{sub 2}. The formation of a single crystalline phase of willemite structure in the samples was confirmed by powder XRD measurements. The phosphor exhibit an intense excitation band centered around 275 nm and a relatively weak excitation centered around 380 nm while the broad band green emission peaks at 524 nm. Other parameters studied include PL spectra, grain morphology, ZnO/SiO{sub 2} molar ratio, Mn concentration, co-dopant/flux and the effect of chemical forms of Mn dopant as well as silica on the PL efficiency. - Highlights: Black-Right-Pointing-Pointer Synthesis of Zn{sub 2}SiO{sub 4}:Mn by solid state sintering at a low temperature of 1000 Degree-Sign C in air. Black-Right-Pointing-Pointer Dissociation of water of crystallization in silicic acid promote sintering efficiency. Black-Right-Pointing-Pointer Photoluminescence efficiency comparable with that of the commercial phosphor. Black-Right-Pointing-Pointer Enhancement in luminescence with MgCO{sub 3} co-doping and refiring as well as ZnO addition. Black-Right-Pointing-Pointer XRD confirm single phase willemite structure (rhombohedral) of Zn{sub 2}SiO{sub 4}:Mn.

Multiple approaches for enhancing all-organic electronics photoluminescent sensors: Simultaneous oxygen and pH monitoring