The New Silicon Strip Detectors for the CMS Tracker Upgrade

CERN Document Server

Dragicevic, Marko

2010-01-01

The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the ...

Superconducting nano-strip particle detectors

International Nuclear Information System (INIS)

Cristiano, R; Ejrnaes, M; Casaburi, A; Zen, N; Ohkubo, M

2015-01-01

We review progress in the development and applications of superconducting nano-strip particle detectors. Particle detectors based on superconducting nano-strips stem from the parent devices developed for single photon detection (SSPD) and share with them ultra-fast response times (sub-nanosecond) and the ability to operate at a relatively high temperature (2–5 K) compared with other cryogenic detectors. SSPDs have been used in the detection of electrons, neutral and charged ions, and biological macromolecules; nevertheless, the development of superconducting nano-strip particle detectors has mainly been driven by their use in time-of-flight mass spectrometers (TOF-MSs) where the goal of 100% efficiency at large mass values can be achieved. Special emphasis will be given to this case, reporting on the great progress which has been achieved and which permits us to overcome the limitations of existing mass spectrometers represented by low detection efficiency at large masses and charge/mass ambiguity. Furthermore, such progress could represent a breakthrough in the field. In this review article we will introduce the device concept and detection principle, stressing the peculiarities of the nano-strip particle detector as well as its similarities with photon detectors. The development of parallel strip configuration is introduced and extensively discussed, since it has contributed to the significant progress of TOF-MS applications. (paper)

Characterisation of an inhomogeneously irradiated microstrip detector using a fine spot infrared laser

CERN Document Server

Casse, G; Bowcock, T J V; Greenall, A; Phillips, JP; Turner, PR; Wright, V

2001-01-01

A prototype silicon microstrip detector for the LHCb vertex locator (VELO) has been partially irradiated using a 24 GeV/c proton beam at the CERN-PS accelerator. The detector possesses a radial strip geometry designed to measure the azimuthal coordinate (Phi) of tracks within the VELO. The peak fluence received by the detector was measured to be 4.6×10 14 p/cm 2 though the non-uniform nature of the exposure left part of the detector unirradiated. The inhomogeneous irradiation introduced a damage profile in the detector approximating to that expected in the VELO. High irradiation gradients are important to study as they can modify the electric field within the silicon. Of special interest are changes in the component of the electric field parallel to the strip plane but perpendicular to the strips which lead to systematic shifts in the reconstructed cluster position. If these (flux and position dependent) shifts are sufficiently large they could contribute to a degraded spatial resolution of the detector. In ...

Charge collection in silicon strip detectors

International Nuclear Information System (INIS)

Kraner, H.W.; Beuttenmuller, R.; Ludlam, T.; Hanson, A.L.; Jones, K.W.; Radeka, V.; Heijne, E.H.M.

1982-11-01

The use of position sensitive silicon detectors as very high resolution tracking devices in high energy physics experiments has been a subject of intense development over the past few years. Typical applications call for the detection of minimum ionizing particles with position measurement accuracy of 10 μm in each detector plane. The most straightforward detector geometry is that in which one of the collecting electrodes is subdivided into closely spaced strips, giving a high degree of segmentation in one coordinate. Each strip may be read out as a separate detection element, or, alternatively, resistive and/or capacitive coupling between adjacent strips may be exploited to interpolate the position via charge division measrurements. With readout techniques that couple several strips, the numer of readout channels can, in principle, be reduced by large factors without sacrificing the intrinsic position accuracy. The testing of individual strip properties and charge division between strips has been carried out with minimum ionizing particles or beams for the most part except in one case which used alphs particless scans. This paper describes the use of a highly collimated MeV proton beam for studies of the position sensing properties of representative one dimensional strip detectors

Simulation of new p-type strip detectors with trench to enhance the charge multiplication effect in the n-type electrodes

International Nuclear Information System (INIS)

Fernández-Martínez, P.; Pellegrini, G.; Balbuena, J.P.; Quirion, D.; Hidalgo, S.; Flores, D.; Lozano, M.; Casse, G.

2011-01-01

This paper shows the simulation results of new p-type strip detectors with trench electrodes to enhance the charge multiplication effect in the irradiated detector. The new design includes baby microstrip detectors (area=1 cm 2 ) with a strip pitch of 80 μm and p-stop isolation structures. The strip has a 5 μm-wide trench along all its length, filled and doped with polysilicon to create a deep N + contact into the material bulk. The trench depth can be varied in order to study the influence of the electric field on the charge multiplication effect in heavily irradiated samples. Some alternative designs have also been studied to establish a comparison between various structures using different technologies. Simulation reproduce the electrical behaviour under different irradiation conditions, taking into account the damage accumulated after irradiation with neutrons and protons with several fluence values. The investigation of these effects provides important indications on the ability of this modified electrode geometry to control and optimise the charge multiplication effect, in order to fully recover the collection efficiency of heavily irradiated microstrip detectors, at reasonable bias voltage compatible with the voltage feed limitation of the CERN SLHC experiments.

Silicon strip detectors for the ATLAS upgrade

CERN Document Server

Gonzalez Sevilla, S; The ATLAS collaboration

2011-01-01

The Large Hadron Collider at CERN will extend its current physics program by increasing the peak luminosity by one order of magnitude. For ATLAS, one of the two general-purpose experiments of the LHC, an upgrade scenario will imply the complete replacement of its internal tracker due to the harsh conditions in terms of particle rates and radiation doses. New radiation-hard prototype n-in-p silicon sensors have been produced for the short-strip region of the future ATLAS tracker. The sensors have been irradiated up to the fluences expected in the high-luminous LHC collider. This paper summarizes recent results on the performance of the irradiated n-in-p detectors.

Strip detector for the ATLAS detector upgrade for the High-Luminosity LHC

CERN Document Server

Veloce, Laurelle Maria; The ATLAS collaboration

2017-01-01

The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High Luminosity LHC, scheduled for 2025. The expected radiation damage at an integrated luminosity of 3000fb-1 will require the tracking detectors to withstand hadron fluencies to over 1x1016 1 MeV neutron equivalent per cm2. With the addition of increased readout rates, the existing Inner Detector will have to be replaced by an all-silicon Inner Tracker (ITk) with a pixel detector surrounded by a strip detector. The ITk strip detector consists of a four-layer barrel and a forward region composed of six discs on each side of the barrel. The current prototyping phase has resulted in the ITk Strip Detector Technical Design Report (TDR), which starts the pre-production readiness phase at the involved institutes. In this contribution we present the design of the ITk Strip Detector and current status of R&D of various detector components.

Silicon strip detector for a novel 2D dosimetric method for radiotherapy treatment verification

Science.gov (United States)

Bocci, A.; Cortés-Giraldo, M. A.; Gallardo, M. I.; Espino, J. M.; Arráns, R.; Alvarez, M. A. G.; Abou-Haïdar, Z.; Quesada, J. M.; Pérez Vega-Leal, A.; Pérez Nieto, F. J.

2012-05-01

The aim of this work is to characterize a silicon strip detector and its associated data acquisition system, based on discrete electronics, to obtain in a near future absorbed dose maps in axial planes for complex radiotherapy treatments, using a novel technique. The experimental setup is based on two phantom prototypes: the first one is a polyethylene slab phantom used to characterize the detector in terms of linearity, percent depth dose, reproducibility, uniformity and penumbra. The second one is a cylindrical phantom, specifically designed and built to recreate conditions close to those normally found in clinical environments, for treatment planning assessment. This system has been used to study the dosimetric response of the detector, in the axial plane of the phantom, as a function of its angle with respect to the irradiation beam. A software has been developed to operate the rotation of this phantom and to acquire signals from the silicon strip detector. As an innovation, the detector was positioned inside the cylindrical phantom parallel to the beam axis. Irradiation experiments were carried out with a Siemens PRIMUS linac operating in the 6 MV photon mode at the Virgen Macarena Hospital. Monte Carlo simulations were performed using Geant4 toolkit and results were compared to Treatment Planning System (TPS) calculations for the absorbed dose-to-water case. Geant4 simulations were used to estimate the sensitivity of the detector in different experimental configurations, in relation to the absorbed dose in each strip. A final calibration of the detector in this clinical setup was obtained by comparing experimental data with TPS calculations.

The charge collection in silicon strip detectors

International Nuclear Information System (INIS)

Boehringer, T.; Hubbeling, L.; Weilhammer, P.; Kemmer, J.; Koetz, U.; Riebesell, M.; Belau, E.; Klanner, R.; Lutz, G.; Neugebauer, E.; Seebrunner, H.J.; Wylie, A.

1983-02-01

The charge collection in silicon detectors has been studied, by measuring the response to high-energy particles of a 20μm pitch strip detector as a function of applied voltage and magnetic field. The results are well described by a simple model. The model is used to predict the spatial resolution of silicon strip detectors and to propose a detector with optimized spatial resolution. (orig.)

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

CERN Document Server

Peltola, Timo Hannu Tapani

2014-01-01

A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching to measurements of silicon strip detectors. However, the model does not provide the expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's...

One dimensional detector for X-ray diffraction with superior energy resolution based on silicon strip detector technology

International Nuclear Information System (INIS)

Dąbrowski, W; Fiutowski, T; Wiącek, P; Fink, J; Krane, H-G

2012-01-01

1-D position sensitive X-ray detectors based on silicon strip detector technology have become standard instruments in X-ray diffraction and are available from several vendors. As these devices have been proven to be very useful and efficient further improvement of their performance is investigated. The silicon strip detectors in X-ray diffraction are primarily used as counting devices and the requirements concerning the spatial resolution, dynamic range and count rate capability are of primary importance. However, there are several experimental issues in which a good energy resolution is important. The energy resolution of silicon strip detectors is limited by the charge sharing effects in the sensor as well as by noise of the front-end electronics. The charge sharing effects in the sensor and various aspects of the electronics, including the baseline fluctuations, which affect the energy resolution, have been analyzed in detail and a new readout concept has been developed. A front-end ASIC with a novel scheme of baseline restoration and novel interstrip logic circuitry has been designed. The interstrip logic is used to reject the events resulting in significant charge sharing between neighboring strips. At the expense of rejecting small fraction of photons entering the detector one can obtain single strip energy spectra almost free of charge sharing effects. In the paper we present the design considerations and measured performance of the detector being developed. The electronic noise of the system at room temperature is typically of the order of 70 el rms for 17 mm long silicon strips and a peaking time of about 1 μs. The energy resolution of 600 eV FWHM has been achieved including the non-reducible charge sharing effects and the electronic noise. This energy resolution is sufficient to address a common problem in X-ray diffraction, i.e. electronic suppression of the fluorescence radiation from samples containing iron or cobalt while irradiated with 8.04 ke

Noise analysis due to strip resistance in the ATLAS SCT silicon strip module

International Nuclear Information System (INIS)

Kipnis, I.

1996-08-01

The module is made out of four 6 cm x 6 cm single sided Si microstrip detectors. Two detectors are butt glued to form a 12 cm long mechanical unit and strips of the two detectors are electrically connected to form 12 cm long strips. The butt gluing is followed by a back to back attachment. The module in this note is the Rφ module where the electronics is oriented parallel to the strip direction and bonded directly to the strips. This module concept provides the maximum signal-to-noise ratio, particularly when the front-end electronics is placed near the middle rather than at the end. From the noise analysis, it is concluded that the worst-case ΔENC (far-end injection) between end- and center-tapped modules will be 120 to 210 el. rms (9 to 15%) for a non-irradiated detector and 75 to 130 el. rms (5 to 9%) for an irradiated detector, for a metal strip resistance of 10 to 20 Ω/cm

Beam tests of ATLAS SCT silicon strip detector modules

CERN Document Server

Campabadal, F; Key, M; Lozano, M; Martínez, C; Pellegrini, G; Rafí, J M; Ullán, M; Johansen, L; Pommeresche, B; Stugu, B; Ciocio, A; Fadeev, V; Gilchriese, M G D; Haber, C; Siegrist, J; Spieler, H; Vu, C; Bell, P J; Charlton, D G; Dowell, John D; Gallop, B J; Homer, R J; Jovanovic, P; Mahout, G; McMahon, T J; Wilson, J A; Barr, A J; Carter, J R; Fromant, B P; Goodrick, M J; Hill, J C; Lester, C G; Palmer, M J; Parker, M A; Robinson, D; Sabetfakhri, A; Shaw, R J; Anghinolfi, F; Chesi, Enrico Guido; Chouridou, S; Fortin, R; Grosse-Knetter, J; Gruwé, M; Ferrari, P; Jarron, P; Kaplon, J; MacPherson, A; Niinikoski, T O; Pernegger, H; Roe, S; Rudge, A; Ruggiero, G; Wallny, R; Weilhammer, P; Bialas, W; Dabrowski, W; Grybos, P; Koperny, S; Blocki, J; Brückman, P; Gadomski, S; Godlewski, J; Górnicki, E; Malecki, P; Moszczynski, A; Stanecka, E; Stodulski, M; Szczygiel, R; Turala, M; Wolter, M; Ahmad, A; Benes, J; Carpentieri, C; Feld, L; Ketterer, C; Ludwig, J; Meinhardt, J; Runge, K; Mikulec, B; Mangin-Brinet, M; D'Onofrio, M; Donega, M; Moêd, S; Sfyrla, A; Ferrère, D; Clark, A G; Perrin, E; Weber, M; Bates, R L; Cheplakov, A P; Saxon, D H; O'Shea, V; Smith, K M; Iwata, Y; Ohsugi, T; Kohriki, T; Kondo, T; Terada, S; Ujiie, N; Ikegami, Y; Unno, Y; Takashima, R; Brodbeck, T; Chilingarov, A G; Hughes, G; Ratoff, P; Sloan, T; Allport, P P; Casse, G L; Greenall, A; Jackson, J N; Jones, T J; King, B T; Maxfield, S J; Smith, N A; Sutcliffe, P; Vossebeld, Joost Herman; Beck, G A; Carter, A A; Lloyd, S L; Martin, A J; Morris, J; Morin, J; Nagai, K; Pritchard, T W; Anderson, B E; Butterworth, J M; Fraser, T J; Jones, T W; Lane, J B; Postranecky, M; Warren, M R M; Cindro, V; Kramberger, G; Mandic, I; Mikuz, M; Duerdoth, I P; Freestone, J; Foster, J M; Ibbotson, M; Loebinger, F K; Pater, J; Snow, S W; Thompson, R J; Atkinson, T M; Bright, G; Kazi, S; Lindsay, S; Moorhead, G F; Taylor, G N; Bachindgagyan, G; Baranova, N; Karmanov, D; Merkine, M; Andricek, L; Bethke, Siegfried; Kudlaty, J; Lutz, Gerhard; Moser, H G; Nisius, R; Richter, R; Schieck, J; Cornelissen, T; Gorfine, G W; Hartjes, F G; Hessey, N P; de Jong, P; Muijs, A J M; Peeters, S J M; Tomeda, Y; Tanaka, R; Nakano, I; Dorholt, O; Danielsen, K M; Huse, T; Sandaker, H; Stapnes, S; Bargassa, Pedrame; Reichold, A; Huffman, T; Nickerson, R B; Weidberg, A; Doucas, G; Hawes, B; Lau, W; Howell, D; Kundu, N; Wastie, R; Böhm, J; Mikestikova, M; Stastny, J; Broklová, Z; Broz, J; Dolezal, Z; Kodys, P; Kubík, P; Reznicek, P; Vorobel, V; Wilhelm, I; Chren, D; Horazdovsky, T; Linhart, V; Pospísil, S; Sinor, M; Solar, M; Sopko, B; Stekl, I; Ardashev, E N; Golovnya, S N; Gorokhov, S A; Kholodenko, A G; Rudenko, R E; Ryadovikov, V N; Vorobev, A P; Adkin, P J; Apsimon, R J; Batchelor, L E; Bizzell, J P; Booker, P; Davis, V R; Easton, J M; Fowler, C; Gibson, M D; Haywood, S J; MacWaters, C; Matheson, J P; Matson, R M; McMahon, S J; Morris, F S; Morrissey, M; Murray, W J; Phillips, P W; Tyndel, M; Villani, E G; Dorfan, D E; Grillo, A A; Rosenbaum, F; Sadrozinski, H F W; Seiden, A; Spencer, E; Wilder, M; Booth, P; Buttar, C M; Dawson, I; Dervan, P; Grigson, C; Harper, R; Moraes, A; Peak, L S; Varvell, K E; Chu Ming Lee; Hou Li Shing; Lee Shih Chang; Teng Ping Kun; Wan Chang Chun; Hara, K; Kato, Y; Kuwano, T; Minagawa, M; Sengoku, H; Bingefors, N; Brenner, R; Ekelöf, T J C; Eklund, L; Bernabeu, J; Civera, J V; Costa, M J; Fuster, J; García, C; García, J E; González-Sevilla, S; Lacasta, C; Llosa, G; Martí i García, S; Modesto, P; Sánchez, J; Sospedra, L; Vos, M; Fasching, D; González, S; Jared, R C; Charles, E

2005-01-01

The design and technology of the silicon strip detector modules for the Semiconductor Tracker (SCT) of the ATLAS experiment have been finalised in the last several years. Integral to this process has been the measurement and verification of the tracking performance of the different module types in test beams at the CERN SPS and the KEK PS. Tests have been performed to explore the module performance under various operating conditions including detector bias voltage, magnetic field, incidence angle, and state of irradiation up to 3 multiplied by 1014 protons per square centimetre. A particular emphasis has been the understanding of the operational consequences of the binary readout scheme.

Position-sensitive silicon strip detector characterization using particle beams

CERN Document Server

Maenpaeae, Teppo

2012-01-01

Silicon strip detectors are fast, cost-effective and have an excellent spatial resolution.They are widely used in many high-energy physics experiments. Modern high energyphysics experiments impose harsh operation conditions on the detectors, e.g., of LHCexperiments. The high radiation doses cause the detectors to eventually fail as a resultof excessive radiation damage. This has led to a need to study radiation tolerance usingvarious techniques. At the same time, a need to operate sensors approaching the endtheir lifetimes has arisen.The goal of this work is to demonstrate that novel detectors can survive the environment that is foreseen for future high-energy physics experiments. To reach this goal,measurement apparatuses are built. The devices are then used to measure the propertiesof irradiated detectors. The measurement data are analyzed, and conclusions are drawn.Three measurement apparatuses built as a part of this work are described: two telescopes measuring the tracks of the beam of a particle acceler...

Test-beam evaluation of heavily irradiated silicon strip modules for ATLAS Phase-II Strip Tracker Upgrade

CERN Document Server

Blue, Andrew; The ATLAS collaboration

2018-01-01

The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of 7.5x1034cm−2s−1. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over 1x1015 1 MeV neutron equivalent per cm2 in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II and CERN SPS test beam facilities to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before and after irradiation with 8x1014neqcm−2 protons and a total ionising dose of 37.2MRad. The DURA...

Efficiency measurements for 3D silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich, E-mail: ulrich.parzefall@physik.uni-freiburg.d [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Dalla Betta, Gian-Franco [INFN Trento and Universita di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Koehler, Michael; Kuehn, Susanne; Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris; Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Zoboli, Andrea [INFN Trento and Universita di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2010-11-01

Silicon strip detectors are widely used as part of the inner tracking layers in particle physics experiments. For applications at the luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, silicon detectors with extreme radiation hardness are required. The 3D detector design, where electrodes are processed from underneath the strips into the silicon bulk material, provides a way to enhance the radiation tolerance of standard planar silicon strip detectors. Detectors with several innovative 3D designs that constitute a simpler and more cost-effective processing than the 3D design initially proposed were connected to read-out electronics from LHC experiments and subsequently tested. Results on the amount of charge collected, the noise and the uniformity of charge collection are given.

ALICE Silicon Strip Detector

CERN Multimedia

Nooren, G

2013-01-01

The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

Strip detector for the ATLAS detector upgrade for the high-luminosity LHC

CERN Document Server

Madaffari, Daniele; The ATLAS collaboration

2017-01-01

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential of the LHC through a sizeable increase in the luminosity, reaching 1x10$^{35}$ cm$^{-2}$s$^{-1}$ after 10 years of operation. A consequence of this increased luminosity is the expected radiation damage at an integrated luminosity of 3000 fb$^{-1}$, requiring the tracking detectors to withstand hadron fluencies to over 1x10$^{16}$ 1 MeV neutron equivalent per cm$^2$. With the addition of increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk), which will consist of both strip and pixelated silicon detectors. The physics motivations, required performance characteristics and basic design of the proposed upgrade of the strip detector will be a subject of this talk. Present ideas and solutions for the strip detector and current research and development program will be discussed.

New developments in double sided silicon strip detectors

International Nuclear Information System (INIS)

Becker, H.; Boulos, T.; Cattaneo, P.; Dietl, H.; Hauff, D.; Holl, P.; Lange, E.; Lutz, G.; Moser, H.G.; Schwarz, A.S.; Settles, R.; Struder, L.; Kemmer, J.; Buttler, W.

1990-01-01

A new type of double sided silicon strip detector has been built and tested using highly density VLSI readout electronics connected to both sides. Capacitive coupling of the strips to the readout electronics has been achieved by integrating the capacitors into the detector design, which was made possible by introducing a new detector biasing concept. Schemes to simplify the technology of the fabrication of the detectors are discussed. The static performance properties of the devices as well as implications of the use of VLSI electronics in their readout are described. Prototype detectors of the described design equipped with high density readout electronics have been installed in the ALEPH detector at LEP. Test results on the performance are given

Study of the effects of neutron irradiation on silicon strip detectors

International Nuclear Information System (INIS)

Giubellino, P.; Panizza, G.; Hall, G.; Sotthibandhu, S.; Ziock, H.J.; Ferguson, P.; Sommer, W.F.; Edwards, M.; Cartiglia, N.; Hubbard, B.; Leslie, J.; Pitzl, D.; O'Shaughnessy, K.; Rowe, W.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E.

1992-01-01

Silicon strip detectors and test structures were exposed to neutron fluences up to Φ=6.1x10 14 n/cm 2 , using the ISIS neutron source at the Rutherford Appleton Laboratory (UK). In this paper we report some of our results concerning the effects of displacement damage, with a comparison of devices made of silicon of different resistivity. The various samples exposed showed a very similar dependence of the leakage current on the fluence received. We studied the change of effective doping concentration, and observed a behaviour suggesting the onset of type inversion at a fluence of ∝2.0x10 13 n/cm 2 , a value which depends on the initial doping concentration. The linear increase of the depletion voltage for fluences higher than the inversion point could eventually determine the maximum fluence tolerable by silicon detectors. (orig.)

Synchrotron applications of pixel and strip detectors at Diamond Light Source

International Nuclear Information System (INIS)

Marchal, J.; Tartoni, N.; Nave, C.

2009-01-01

A wide range of position-sensitive X-ray detectors have been commissioned on the synchrotron X-ray beamlines operating at the Diamond Light Source in UK. In addition to mature technologies such as image-plates, CCD-based detectors, multi-wire and micro-strip gas detectors, more recent detectors based on semiconductor pixel or strip sensors coupled to CMOS read-out chips are also in use for routine synchrotron X-ray diffraction and scattering experiments. The performance of several commercial and developmental pixel/strip detectors for synchrotron studies are discussed with emphasis on the image quality achieved with these devices. Examples of pixel or strip detector applications at Diamond Light Source as well as the status of the commissioning of these detectors on the beamlines are presented. Finally, priorities and ideas for future developments are discussed.

The depletion properties of silicon microstrip detectors with variable strip pitch

International Nuclear Information System (INIS)

Krizmanic, J.F.

1994-01-01

We have investigated the depletion properties of trapezoidal shaped silicon microstrip detectors which have variable strip pitch. Four types of detectors were examined: three detectors have constant strip width and a fourth has a varying strip width. The detectors are single sided with readout performed via p + strips. The depletion properties of the devices were measured using two different methods. The first used capacitance versus voltage measurements, while the second used a 1060 nm wavelength laser coupled to a single mode fiber with a mode field diameter less than 10 μm. The small laser spot size allowed for the depletion depth to be measured in a localized area of the detector. The laser induced charge on an electrode was measured as a function of reverse bias voltage using a sensitive charge preamplifier. The depletion voltages of the detectors demonstrate a strong dependence upon the ratio of strip width to strip pitch. Moreover, these measurements show that a large value of this ratio yields a lower depletion voltage and vice versa. (orig.)

Strip type radiation detector and method of making same

International Nuclear Information System (INIS)

Jantsch, O.; Feigt, I.; Willig, W.R.

1976-01-01

An improved strip detector and a method for making such a detector in which a high resistivity N conduction semiconductor body has electrode strips formed thereon by diffusion is described. The strips are formed so as to be covered by an oxide layer at the surface point of the PN junction and in which the opposite side of the semiconductor body then has a substantial amount of material etched away to form a thin semiconductor upon which strip electrodes which are perpendicular to the electrodes on the first side are then placed

Characterization and Calibration of Large Area Resistive Strip Micromegas Detectors

CERN Document Server

Losel, Philipp Jonathan; The ATLAS collaboration

2015-01-01

Resisitve strip Micromegas detectors behave discharge tolerant. They have been tested extensively as smaller detectors of about 10 x 10 cm$^2$ in size and they work reliably at high rates of 100\\,kHz/cm$^2$ and above. Tracking resolutions well below 100\\,$\\mu$m have been observed for 100 GeV muons and pions. Micromegas detectors are meanwhile proposed as large area muon precision trackers of 2-3\\,m$^2$ in size. To investigate possible differences between small and large detectors, a 1\\,m$^2$ detector with 2048 resistive strips at a pitch of 450 $\\mu$m was studied in the LMU Cosmic Ray Facility (CRF) using two 4 $\\times$ 2.2 m$^2$ large Monitored Drift Tube (MDT) chambers for cosmic muon reference tracking. Segmentation of the resistive strip anode plane in 57.6\\,mm x 95\\,mm large areas has been realized by the readout of 128 strips with one APV25 chip each and by 11 95\\,mm broad trigger scintillators placed along the readout strips.\\\\ This allows for mapping of homogenity in pulse height and efficiency, deter...

Advancements of floating strip Micromegas detectors for medical imaging applications

Energy Technology Data Exchange (ETDEWEB)

Klitzner, Felix; Biebel, Otmar; Bortfeldt, Jonathan; Flierl, Bernhard [LS Schaile, LMU Muenchen (Germany); Magallanes, Lorena [LS Parodi, LMU Muenchen (Germany); Universitaetsklinikum Heidelberg (Germany); Parodi, Katia [LS Parodi, LMU Muenchen (Germany); Heidelberger Ionenstrahl Therapiezentrum (Germany); Voss, Bernd [Gesellschaft fuer Schwerionenforschung, Darmstadt (Germany)

2016-07-01

Floating strip Micromegas have proven to be high-rate capable tracking detectors with excellent spatial and temporal resolution for particle fluxes up to 7 MHz/cm{sup 2}. To further increase the high-rate capability a Ne:CF{sub 4} 86:14 vol.% gas mixture has been used as detector gas. We present results from measurements with a seven detector system consisting of six low material budget floating strip Micromegas, a GEM detector and a scintillator based particle range telescope. The gaseous and the scintillation detectors were read out with APV25 frontend boards, allowing for single strip readout with pulse height and timing information. A two-dimensional readout anode for floating strip Micromegas has been tested for the first time. The Micromegas detectors were operated with minimal additional drift field, which significantly improves the timing resolution and also the spatial resolution for inclined tracks. We discuss the detector performance in high-rate carbon and proton beams at the Heidelberg Ion Beam Therapy Center (HIT) and present radiographies of phantoms, acquired with the system.

Evaluation of the performance of irradiated silicon strip sensors for the forward detector of the ATLAS Inner Tracker Upgrade

Energy Technology Data Exchange (ETDEWEB)

Mori, R., E-mail: riccardo.mori@physik.uni-freiburg.de [Physikalisches Institut, Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Allport, P.P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Kuczewski, P.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Arratia-Munoz, M.I.; Hommels, L.B.A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ullan, M.; Fleta, C.; Fernandez-Tejero, J. [Centro Nacional de Microelectronica (IMB-CNM, CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain); Bloch, I.; Gregor, I.M.; Lohwasser, K. [DESY, Notkestrasse 85, 22607 Hambrug (Germany); and others

2016-09-21

The upgrade to the High-Luminosity LHC foreseen in about ten years represents a great challenge for the ATLAS inner tracker and the silicon strip sensors in the forward region. Several strip sensor designs were developed by the ATLAS collaboration and fabricated by Hamamatsu in order to maintain enough performance in terms of charge collection efficiency and its uniformity throughout the active region. Of particular attention, in the case of a stereo-strip sensor, is the area near the sensor edge where shorter strips were ganged to the complete ones. In this work the electrical and charge collection test results on irradiated miniature sensors with forward geometry are presented. Results from charge collection efficiency measurements show that at the maximum expected fluence, the collected charge is roughly halved with respect to the one obtained prior to irradiation. Laser measurements show a good signal uniformity over the sensor. Ganged strips have a similar efficiency as standard strips.

The Argonne silicon strip-detector array

Energy Technology Data Exchange (ETDEWEB)

Wuosmaa, A H; Back, B B; Betts, R R; Freer, M; Gehring, J; Glagola, B G; Happ, Th; Henderson, D J; Wilt, P [Argonne National Lab., IL (United States); Bearden, I G [Purdue Univ., Lafayette, IN (United States). Dept. of Physics

1992-08-01

Many nuclear physics experiments require the ability to analyze events in which large numbers of charged particles are detected and identified simultaneously, with good resolution and high efficiency, either alone, or in coincidence with gamma rays. The authors have constructed a compact large-area detector array to measure these processes efficiently and with excellent energy resolution. The array consists of four double-sided silicon strip detectors, each 5x5 cm{sup 2} in area, with front and back sides divided into 16 strips. To exploit the capability of the device fully, a system to read each strip-detector segment has been designed and constructed, based around a custom-built multi-channel preamplifier. The remainder of the system consists of high-density CAMAC modules, including multi-channel discriminators, charge-sensing analog-to-digital converters, and time-to-digital converters. The array`s performance has been evaluated using alpha-particle sources, and in a number of experiments conducted at Argonne and elsewhere. Energy resolutions of {Delta}E {approx} 20-30 keV have been observed for 5 to 8 MeV alpha particles, as well as time resolutions {Delta}T {<=} 500 ps. 4 figs.

Study of the effects of neutron irradiation on silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Giubellino, P.; Panizza, G. (INFN Torino (Italy)); Hall, G.; Sotthibandhu, S. (Imperial Coll., London (United Kingdom)); Ziock, H.J.; Ferguson, P.; Sommer, W.F. (Los Alamos National Lab., NM (United States)); Edwards, M. (Rutherford Appleton Lab., Chilton (United Kingdom)); Cartiglia, N.; Hubbard, B.; Leslie, J.; Pitzl, D.; O' Shaughnessy, K.; Rowe, W.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E. (Santa Cruz Inst. for Particle Physics, Univ. California, CA (United States))

1992-05-01

Silicon strip detectors and test structures were exposed to neutron fluences up to {Phi}=6.1x10{sup 14} n/cm{sup 2}, using the ISIS neutron source at the Rutherford Appleton Laboratory (UK). In this paper we report some of our results concerning the effects of displacement damage, with a comparison of devices made of silicon of different resistivity. The various samples exposed showed a very similar dependence of the leakage current on the fluence received. We studied the change of effective doping concentration, and observed a behaviour suggesting the onset of type inversion at a fluence of {proportional to}2.0x10{sup 13} n/cm{sup 2}, a value which depends on the initial doping concentration. The linear increase of the depletion voltage for fluences higher than the inversion point could eventually determine the maximum fluence tolerable by silicon detectors. (orig.).

ATLAS ITk Strip Detector for High-Luminosity LHC

CERN Document Server

Kroll, Jiri; The ATLAS collaboration

2017-01-01

The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High-Luminosity LHC that is scheduled for 2026. The expected peak instantaneous luminosity up to 7.5E34 per second and cm2 corresponding to approximately 200 inelastic proton-proton interactions per beam crossing, radiation damage at an integrated luminosity of 3000/fb and hadron fluencies over 1E16 1 MeV neutron equivalent per cm2, as well as fast hardware tracking capability that will bring Level-0 trigger rate of a few MHz down to a Level-1 trigger rate below 1 MHz require a replacement of existing Inner Detector by an all-silicon Inner Tracker (ITk) with a pixel detector surrounded by a strip detector. The current prototyping phase, that is working with ITk Strip Detector consisting of a four-layer barrel and a forward region composed of six discs on each side of the barrel, has resulted in the ATLAS ITk Strip Detector Technical Design Report (TDR), which starts the pre-production readiness phase at the ...

Fabrication of double-sided thallium bromide strip detectors

Energy Technology Data Exchange (ETDEWEB)

Hitomi, Keitaro, E-mail: keitaro.hitomi@qse.tohoku.ac.jp [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Nagano, Nobumichi [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Onodera, Toshiyuki [Department of Electronics and Intelligent Systems, Tohoku Institute of Technology, Sendai 982-8577 (Japan); Kim, Seong-Yun; Ito, Tatsuya; Ishii, Keizo [Department of Quantum Science and Energy Engineering, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan)

2016-07-01

Double-sided strip detectors were fabricated from thallium bromide (TlBr) crystals grown by the traveling-molten zone method using zone-purified materials. The detectors had three 3.4-mm-long strips with 1-mm widths and a surrounding electrode placed orthogonally on opposite surfaces of the crystals at approximately 6.5×6.5 mm{sup 2} in area and 5 mm in thickness. Excellent charge transport properties for both electrons and holes were observed from the TlBr crystals. The mobility-lifetime products for electrons and holes in the detector were measured to be ~3×10{sup −3} cm{sup 2}/V and ~1×10{sup −3} cm{sup 2}/V, respectively. The {sup 137}Cs spectra corresponding to the gamma-ray interaction position were obtained from the detector. An energy resolution of 3.4% of full width at half maximum for 662-keV gamma rays was obtained from one “pixel” (an intersection of the strips) of the detector at room temperature.

ATLAS ITk Strip Detector for High-Luminosity LHC

CERN Document Server

Kroll, Jiri; The ATLAS collaboration

2017-01-01

The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High-Luminosity LHC that is scheduled for 2026. The expected peak instantaneous luminosity up to $7.5\\times10^{34}\\;\\mathrm{cm}^{-2}\\mathrm{s}^{-1}$ corresponding to approximately 200 inelastic proton-proton interactions per beam crossing, radiation damage at an integrated luminosity of $3000\\;\\mathrm{fb}^{-1}$ and hadron fluencies over $2\\times10^{16}\\;\\mathrm{n}_{\\mathrm{eq}}/\\mathrm{cm}^{2}$, as well as fast hardware tracking capability that will bring Level-0 trigger rate of a few MHz down to a Level-1 trigger rate below 1 MHz require a replacement of existing Inner Detector by an all-silicon Inner Tracker with a pixel detector surrounded by a strip detector. The current prototyping phase, that is working with ITk Strip Detector consisting of a four-layer barrel and a forward region composed of six disks on each side of the barrel, has resulted in the ATLAS Inner Tracker Strip Detector Technical Design R...

A new strips tracker for the upgraded ATLAS ITk detector

Science.gov (United States)

David, C.

2018-01-01

The ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the fluences and radiation levels will be higher by as much as a factor of ten. The new sub-detectors must thus be faster, of larger area, more segmented and more radiation hard while the amount of inactive material should be minimized and the power supply to the front-end systems should be increased. For those reasons, the current inner tracker of the ATLAS detector will be fully replaced by an all-silicon tracking system that consists of a pixel detector at small radius close to the beam line and a large area strip tracker surrounding it. This document gives an overview of the design of the strip inner tracker (Strip ITk) and summarises the intensive R&D activities performed over the last years by the numerous institutes within the Strips ITk collaboration. These studies are accompanied with a strong prototyping effort to contribute to the optimisation of the Strip ITk's structure and components. This effort culminated recently in the release of the ATLAS Strips ITk Technical Design Report (TDR).

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

CERN Document Server

INSPIRE-00335524; Bhardwaj, A.; Dalal, R.; Eber, R.; Eichhorn, T.; Lalwani, K.; Messineo, A.; Printz, M.; Ranjan, K.

2015-04-23

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. To upgrade the tracker to required performance level, extensive measurements and simulations studies have already been carried out. A defect model of Synopsys Sentaurus TCAD simulation package for the bulk properties of proton irradiated devices has been producing simulations closely matching with measurements of silicon strip detectors. However, the model does not provide expected behavior due to the fluence increased surface damage. The solution requires an approach that does not affect the accurate bulk properties produced by the proton model, but only adds to it the required radiation induced properties close to the surface. These include the observed position dependency of the strip detector's charge collec...

Characterization and Calibration of Large Area Resistive Strip Micromegas Detectors

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00389527; The ATLAS collaboration

2016-01-01

Resistive strip Micromegas detectors are discharge tolerant. They have been tested extensively as small detectors of about 10 x 10 cm$^2$ in size and they work reliably at high rates of 100 kHz/cm$^2$ and above. Tracking resolution well below 100 $\\mu$m has been observed for 100 GeV muons and pions. Micromegas detectors are meanwhile proposed as large area muon precision trackers of 2-3 m$^2$ in size. To investigate possible differences between small and large detectors, a 1 m$^2$ detector with 2048 resistive strips at a pitch of 450 $\\mu$m was studied in the LMU Cosmic Ray Measurement Facility (CRMF) using two 4 $\\times$ 2.2 m$^2$ large Monitored Drift Tube (MDT) chambers for cosmic muon reference tracking. A segmentation of the resistive strip anode plane in 57.6 mm x 93 mm large areas has been realized by the readout of 128 strips with one APV25 chip each and by eleven 93 mm broad trigger scintillators placed along the readout strips. This allows for mapping of homogeneity in pulse height and efficiency, d...

Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

CERN Document Server

Hara, K; The ATLAS collaboration

2012-01-01

The present ATLAS silicon strip (SCT) and transition radiation (TRT) trackers will be replaced with new silicon strip detectors, as part of the Inner Tracker System (ITK), for the Phase-2 upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs to establish radiation harder strip detectors that can survive in a radiation level up to 3000 fb-1 of integrated luminosity based on n+-on-p microstrip detector. We describe main specifications for this year’s sensor fabrication, followed by a description of possible module integration schema

Fabrication of silicon strip detectors using a step-and-repeat lithography system

International Nuclear Information System (INIS)

Holland, S.

1991-11-01

In this work we describe the use of a step-and-repeat lithography system (stepper) for the fabrication of silicon strip detectors. Although the field size of the stepper is only 20 mm in diameter, we have fabricated much larger detectors by printing a repetitive strip detector pattern in a step-and-repeat fashion. The basic unit cell is 7 mm in length. The stepper employs a laser interferometer for stage placement, and the resulting high precision allows one to accurately place the repetitive patterns on the wafer. A small overlap between the patterns ensures a continuous strip. A detector consisting of 512 strips on a 50 μm pitch has been fabricated using this technique. The dimensions of the detector are 6.3 cm by 2.56 cm. Yields of over 99% have been achieved, where yield is defined as the percentage of strips with reverse leakage current below 1 nA. In addition to the inherent advantages of a step-and-repeat system, this technique offers great flexibility in the fabrication of large-area strip detectors since the length and width of the detector can be changed by simply reprogramming the stepper computer. Hence various geometry strip detectors can be fabricated with only one set of masks, as opposed to a separate set of masks for each geometry as would be required with a contact or proximity aligner

Coordinate determination of high energy charged particles by silicon strip detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Zinets, O.S.

2002-01-01

The coordinate determination accuracy of minimum ionizing and short-range particles by silicon strip detectors has been considered. The charge collection on neighboring strips of the detector is studied and the influence of diffusion and the electric field distribution on the accuracy of the coordinate determination is analyzed. It has been shown that coordinates of both minimum ionizing and short-range particles can be determined with accuracy to a few microns using silicon strip detectors. 11 refs.; 8 figs

Si-strip photon counting detectors for contrast-enhanced spectral mammography

Science.gov (United States)

Chen, Buxin; Reiser, Ingrid; Wessel, Jan C.; Malakhov, Nail; Wawrzyniak, Gregor; Hartsough, Neal E.; Gandhi, Thulasi; Chen, Chin-Tu; Iwanczyk, Jan S.; Barber, William C.

2015-08-01

We report on the development of silicon strip detectors for energy-resolved clinical mammography. Typically, X-ray integrating detectors based on scintillating cesium iodide CsI(Tl) or amorphous selenium (a-Se) are used in most commercial systems. Recently, mammography instrumentation has been introduced based on photon counting Si strip detectors. The required performance for mammography in terms of the output count rate, spatial resolution, and dynamic range must be obtained with sufficient field of view for the application, thus requiring the tiling of pixel arrays and particular scanning techniques. Room temperature Si strip detector, operating as direct conversion x-ray sensors, can provide the required speed when connected to application specific integrated circuits (ASICs) operating at fast peaking times with multiple fixed thresholds per pixel, provided that the sensors are designed for rapid signal formation across the X-ray energy ranges of the application. We present our methods and results from the optimization of Si-strip detectors for contrast enhanced spectral mammography. We describe the method being developed for quantifying iodine contrast using the energy-resolved detector with fixed thresholds. We demonstrate the feasibility of the method by scanning an iodine phantom with clinically relevant contrast levels.

The silicon strip detector at the Mark 2

International Nuclear Information System (INIS)

Jacobsen, R.; Golubev, V.; Lueth, V.; Barnett, B.; Dauncey, P.; Matthews, J.; Adolphsen, C.; Burchat, P.; Gratta, G.; King, M.; Labarga, L.; Litke, A.; Turala, M.; Zaccardelli, C.

1990-04-01

We have installed a Silicon Strip Vertex Detector in the Mark II detector at the Stanford Linear Collider. We report on the performance of the detector during a recent test run, including backgrounds, stability and charged particle tracking. 10 refs., 9 figs

Design, fabrication and characterization of multi-guard-ring furnished p+n-n+ silicon strip detectors for future HEP experiments

Science.gov (United States)

Lalwani, Kavita; Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh

2016-07-01

Si detectors, in various configurations (strips and pixels), have been playing a key role in High Energy Physics (HEP) experiments due to their excellent vertexing and high precision tracking information. In future HEP experiments like upgrade of the Compact Muon Solenoid experiment (CMS) at the Large Hadron Collider (LHC), CERN and the proposed International Linear Collider (ILC), the Si tracking detectors will be operated in a very harsh radiation environment, which leads to both surface and bulk damage in Si detectors which in turn changes their electrical properties, i.e. change in the full depletion voltage, increase in the leakage current and decrease in the charge collection efficiency. In order to achieve the long term durability of Si-detectors in future HEP experiments, it is required to operate these detectors at very high reverse biases, beyond the full depletion voltage, thus requiring higher detector breakdown voltage. Delhi University (DU) is involved in the design, fabrication and characterization of multi-guard-ring furnished ac-coupled, single sided, p+n-n+ Si strip detectors for future HEP experiments. The design has been optimized using a two-dimensional numerical device simulation program (TCAD-Silvaco). The Si strip detectors are fabricated with eight-layers mask process using the planar fabrication technology by Bharat Electronic Lab (BEL), India. Further an electrical characterization set-up is established at DU to ensure the quality performance of fabricated Si strip detectors and test structures. In this work measurement results on non irradiated Si Strip detectors and test structures with multi-guard-rings using Current Voltage (IV) and Capacitance Voltage (CV) characterization set-ups are discussed. The effect of various design parameters, for example guard-ring spacing, number of guard-rings and metal overhang on breakdown voltage of test structures have been studied.

Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

CERN Document Server

Hara, K; The ATLAS collaboration

2012-01-01

present ATLAS silicon strip tracker (SCT) and transition radiation tracker(TRT) are to be replaced with new silicon strip detectors as part of the Inner Tracker System (ITK) for the Phase-II upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs based on n+-on-p microstrip detectors to fabricate improved radiation hard strip detectors that can survive the radiation levels corresponding to the integrated luminosity of up to 3000 fb−1. We describe the main specifications for this year’s sensor fabrication and the related R&D results, followed by a description of the candidate schema for module integration.

Low dose radiation damage effects in silicon strip detectors

International Nuclear Information System (INIS)

Wiącek, P.; Dąbrowski, W.

2016-01-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Low dose radiation damage effects in silicon strip detectors

Science.gov (United States)

Wiącek, P.; Dąbrowski, W.

2016-11-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade

Energy Technology Data Exchange (ETDEWEB)

Laakso, M. (Fermi National Accelerator Lab., Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland))

1992-03-01

Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N{sup +}{minus} strips or the usage of the phenomenon known as the punch-through effect for P{sup +}{minus} strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade.

Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade

International Nuclear Information System (INIS)

Laakso, M.

1992-03-01

Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N + - strips or the usage of the phenomenon known as the punch-through effect for P + - strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade

Apparatus for irradiating a continuous line metallic strip with electron beams

International Nuclear Information System (INIS)

Matsuda, Shozo; Tanaka, Tadashi; Okamoto, Tadaaki; Ueno, Nagaharu.

1970-01-01

The secondary X-rays from an irradiated object are completely shielded by providing direction-change rollers between applicator rollers and irradiation devices. The substrate strip turns its direction of travel by 90 0 through idle rollers and before it enters a front side applicator roller. After the application of coatings, the strip travels over a roller to turn upwardly, so that the applicator is isolated from the following irradiation enclosure. Next, the irradiated strip changes its direction by 90 0 through a roller to enter a bake side coating applicator. After a direction change through a roller, the strip enters the irradiation enclosure. In this way, the applicators can prevent leakage of secondary X-rays. (Iwakiri, K.)

Distribution of electric field and charge collection in silicon strip detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Zinets, O.S.

1995-01-01

The distribution of electric field in silicon strip detectors is analyzed in the case of dull depletion as well as for partial depletion. Influence of inhomogeneous electric fields on the charge collection and performances of silicon strip detectors is discussed

The new silicon strip detectors for the CMS tracker upgrade

International Nuclear Information System (INIS)

Dragicevic, M.

2010-01-01

The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the tracker caused by the increase in luminosity which is proposed as an upgrade to the LHC accelerator (sLHC). This chapter motivates the work I have conducted and clarifies why the solutions proposed by myself are important contributions to the upgrade of the CMS tracker. The following chapters present the concepts that are necessary to operate the silicon strip sensors at sLHC luminosities and additional improvements to the construction and quality assurance of the sensors and the detector modules. The most important concepts and works presented in chapters 7 to 9 are: Development of a software framework to enable the flexible and quick design of test structures and sensors. Selecting a suitable sensor material which is sufficiently radiation hard. Design, implementation and production of a standard set of test structures to enable the quality assurance of such sensors and any future developments. Electrical characterisation of the test structures and analysis

The ATLAS tracker strip detector for HL-LHC

CERN Document Server

Cormier, Kyle James Read; The ATLAS collaboration

2016-01-01

As part of the ATLAS upgrades for the High Luminsotiy LHC (HL-LHC) the current ATLAS Inner Detector (ID) will be replaced by a new Inner Tracker (ITk). The ITk will consist of two main components: semi-conductor pixels at the innermost radii, and silicon strips covering larger radii out as far as the ATLAS solenoid magnet including the volume currently occupied by the ATLAS Transition Radiation Tracker (TRT). The primary challenges faced by the ITk are the higher planned read out rate of ATLAS, the high density of charged particles in HL-LHC conditions for which tracks need to be resolved, and the corresponding high radiation doses that the detector and electronics will receive. The ITk strips community is currently working on designing and testing all aspects of the sensors, readout, mechanics, cooling and integration to meet these goals and a Technical Design Report is being prepared. This talk is an overview of the strip detector component of the ITk, highlighting the current status and the road ahead.

The ATLAS tracker strip detector for HL-LHC

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00512833; The ATLAS collaboration

2017-01-01

As part of the ATLAS upgrades for the High Luminsotiy LHC (HL-LHC) the current ATLAS Inner Detector (ID) will be replaced by a new Inner Tracker (ITk). The ITk will consist of two main components: semi-conductor pixels at the innermost radii, and silicon strips covering larger radii out as far as the ATLAS solenoid magnet including the volume currently occupied by the ATLAS Transition Radiation Tracker (TRT). The primary challenges faced by the ITk are the higher planned read out rate of ATLAS, the high density of charged particles in HL-LHC conditions for which tracks need to be resolved, and the corresponding high radiation doses that the detector and electronics will receive. The ITk strips community is currently working on designing and testing all aspects of the sensors, readout, mechanics, cooling and integration to meet these goals and a Technical Design Report is being prepared. This talk is an overview of the strip detector component of the ITk, highlighting the current status and the road ahead.

Quality assurance and irradiation studies on CMS silicon strip sensors

CERN Document Server

Furgeri, Alexander

The high luminosity at the Large Hadron Collider at the European Particle Physics Laboratory CERN in Geneva causes a harsh radiation environment for the detectors. The most inner layers of the tracker are irradiated to an equivalent fluence of 1.6e14 1MeV-neutrons per cmˆ2. The radiation causes damage in the silicon lattice of the sensors. This increases the leakage current and changes the full depletion voltage. Both of these parameters are after irradiation neither stable with time nor with temperatures above 0oC. This thesis presents the changes of the leakage currents, the full depletion voltages, and all strip parameters of the sensors after proton and neutron irradiation. After irradiation annealing studies have been carried out. All observed effects are used to simulate the evolution of full depletion voltage for different annealing times and annealing temperatures in order to keep the power consumption as low as possible. From the observed radiation damage and annealing effects the sensors of the tra...

Compton recoil electron tracking with silicon strip detectors

International Nuclear Information System (INIS)

O'Neill, T.J.; Ait-Ouamer, F.; Schwartz, I.; Tumer, O.T.; White, R.S.; Zych, A.D.

1992-01-01

The application of silicon strip detectors to Compton gamma ray astronomy telescopes is described in this paper. The Silicon Compton Recoil Telescope (SCRT) tracks Compton recoil electrons in silicon strip converters to provide a unique direction for Compton scattered gamma rays above 1 MeV. With strip detectors of modest positional and energy resolutions of 1 mm FWHM and 3% at 662 keV, respectively, 'true imaging' can be achieved to provide an order of magnitude improvement in sensitivity to 1.6 x 10 - 6 γ/cm 2 -s at 2 MeV. The results of extensive Monte Carlo calculations of recoil electrons traversing multiple layers of 200 micron silicon wafers are presented. Multiple Coulomb scattering of the recoil electron in the silicon wafer of the Compton interaction and the next adjacent wafer is the basic limitation to determining the electron's initial direction

Evaluation of silicon micro strip detectors with large read-out pitch

International Nuclear Information System (INIS)

Senyo, K.; Yamamura, K.; Tsuboyama, T.; Avrillon, S.; Asano, Y.; Bozek, A.; Natkaniec, Z.; Palka, H.; Rozanska, M.; Rybicki, K.

1996-01-01

For the development of the silicon micro-strip detector with the pitch of the readout strips as large as 250 μm on the ohmic side, we made samples with different structures. Charge collection was evaluated to optimize the width of implant strips, aluminum read-out strips, and/or the read-out scheme among strips. (orig.)

Quality Tests of Double-Sided Silicon Strip Detectors

CERN Document Server

Cambon, T; CERN. Geneva; Fintz, P; Guillaume, G; Jundt, F; Kuhn, C; Lutz, Jean Robert; Pagès, P; Pozdniakov, S; Rami, F; Sparavec, K; Dulinski, W; Arnold, L

1997-01-01

The quality of the SiO2 insulator (AC coupling between metal and implanted strips) of double-sided Silicon strip detectors has been studied by using a probe station. Some tests performed on 23 wafers are described and the results are discussed. Remark This note seems to cause problems with ghostview but it can be printed without any problem.

The ATLAS Tracker Upgrade: Short Strips Detectors for the SLHC

CERN Document Server

Soldevila, U; Lacasta, C; Marti i García, S; Miñano, M

2009-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN around 2018 by about an order of magnitude, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for SLHC operation. In order to cope with the order of magnitude increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. A massive R&D programme is underway to develop silicon sensors with sufficient radiation hardness. New front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics ...

Output factor determination for dose measurements in axial and perpendicular planes using a silicon strip detector

Science.gov (United States)

Abou-Haïdar, Z.; Bocci, A.; Alvarez, M. A. G.; Espino, J. M.; Gallardo, M. I.; Cortés-Giraldo, M. A.; Ovejero, M. C.; Quesada, J. M.; Arráns, R.; Prieto, M. Ruiz; Vega-Leal, A. Pérez; Nieto, F. J. Pérez

2012-04-01

In this work we present the output factor measurements of a clinical linear accelerator using a silicon strip detector coupled to a new system for complex radiation therapy treatment verification. The objective of these measurements is to validate the system we built for treatment verification. The measurements were performed at the Virgin Macarena University Hospital in Seville. Irradiations were carried out with a Siemens ONCOR™ linac used to deliver radiotherapy treatment for cancer patients. The linac was operating in 6 MV photon mode; the different sizes of the fields were defined with the collimation system provided within the accelerator head. The output factor was measured with the silicon strip detector in two different layouts using two phantoms. In the first, the active area of the detector was placed perpendicular to the beam axis. In the second, the innovation consisted of a cylindrical phantom where the detector was placed in an axial plane with respect to the beam. The measured data were compared with data given by a commercial treatment planning system. Results were shown to be in a very good agreement between the compared set of data.

MUST: A silicon strip detector array for radioactive beam experiments

CERN Document Server

Blumenfeld, Y; Sauvestre, J E; Maréchal, F; Ottini, S; Alamanos, N; Barbier, A; Beaumel, D; Bonnereau, B; Charlet, D; Clavelin, J F; Courtat, P; Delbourgo-Salvador, P; Douet, R; Engrand, M; Ethvignot, T; Gillibert, A; Khan, E; Lapoux, V; Lagoyannis, A; Lavergne, L; Lebon, S; Lelong, P; Lesage, A; Le Ven, V; Lhenry, I; Martin, J M; Musumarra, A; Pita, S; Petizon, L; Pollacco, E; Pouthas, J; Richard, A; Rougier, D; Santonocito, D; Scarpaci, J A; Sida, J L; Soulet, C; Stutzmann, J S; Suomijärvi, T; Szmigiel, M; Volkov, P; Voltolini, G

1999-01-01

A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm sup 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and a...

Technology Development on P-type Silicon Strip Detectors for Proton Beam Dosimetry

International Nuclear Information System (INIS)

Aouadi, K.; Bouterfa, M.; Delamare, R.; Flandre, D.; Bertrand, D.; Henry, F.

2013-06-01

In this paper, we present a technology for the fabrication of n-in-p silicon strip detectors, which is based on the use of Al 2 O 3 oxide compared to p-spray insulation scheme. This technology has been developed using the best technological parameters deduced from simulations, particularly for the p-spray implantation parameters. Different wafers were processed towards the fabrication of the radiation detectors with p-spray insulation and Al 2 O 3 . The evaluation of the prototype detectors has been carried out by performing the electrical characterization of the devices through the measurement of current-voltage and capacitance-voltage characteristics, as well as the measurement of detection response under radiation. The results of electrical measurements indicate that detectors fabricated with Al 2 O 3 exhibit a dark current several times lower than p-spray detectors and show an excellent electrical insulation between strips with a higher inter-strip resistance. Response of Al 2 O 3 strip detector under radiation has been found better. The resulting improved output signal dynamic range finally makes the use of Al 2 O 3 more attractive. (authors)

ATLAS Tracker Upgrade: Silicon Strip Detectors for the sLHC

CERN Document Server

Koehler, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. A key issue ...

The development of drift-strip detectors based on CdZnTe

DEFF Research Database (Denmark)

Gostilo, V.; Budtz-Jørgensen, Carl; Kuvvetli, Irfan

2002-01-01

The design and technological development of a CdZnTe drift strip detector is described. The device is based on a monocrystal of dimensions 10 x 10 x 3 mm(3) and has a pitch of 200 mum and a strip width of 100 mum. The strip length is 9.5 mm. The distribution of the leakage currents of the strips...

Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

International Nuclear Information System (INIS)

Wang Pengfei; Li Zhankui; Li Haixia

2014-01-01

Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

MUST, a set of strip detectors for studying radioactive beams induced reactions

International Nuclear Information System (INIS)

Blumenfeld, Y.; Barbier, A.; Beaumel, D.; Charlet, D.; Clavelin, J.F.; Douet, R.; Engrand, M.; Lebon, S.; Lelong, P.; Lesage, A.; Leven, V.; Lhenry, I.; Marechal, F.; Petizon, L.; Pouthas, J.; Richard, A.; Rougier, D.; Soulet, C.; Suomijaervi, T.; Volkov, P.; Voltolini, G.

1996-01-01

This report states the specificity of light particles elastic scattering, and the need of detecting recoil protons to improve angular resolution. Then the development of a specific MUST strip detector is detailed: 60 strips detectors with Si O sub 2 dielectric, that yield 500 ps time resolution, and Si (Li) detectors following next. A versatile data acquisition system has been developed too, with CAMAC interface to suit to any experimental plant. (D.L.)

Strip detectors read-out system user's guide

International Nuclear Information System (INIS)

Claus, G.; Dulinski, W.; Lounis, A.

1996-01-01

The Strip Detector Read-out System consists of two VME modules: SDR-Flash and SDR-seq completed by a fast logic SDR-Trig stand alone card. The system is a self-consistent, cost effective and easy use solution for the read-out of analog multiplexed signals coming from some of the front-end electronics chips (Viking/VA chips family, Premus 128 etc...) currently used together with solid (silicon) or gas microstrip detectors. (author)

A high rate, low noise, x-ray silicon strip detector system

International Nuclear Information System (INIS)

Ludewigt, B.; Jaklevic, J.; Kipnis, I.; Rossington, C.; Spieler, H.

1993-11-01

An x-ray detector system, based on a silicon strip detector wire-bonded to a low noise charge-senstive amplifier integrated circuit, has been developed for synchrotron radiation experiments which require very high count rates and good energy resolution. Noise measurements and x-ray spectra were taken using a 6 mm long, 55 μm pitch strip detector in conjunction with a prototype 16-channel charge-sensitive preamplifier, both fabricated using standard 1.2 μm CMOS technology. The detector system currently achieves an energy resolution of 350 eV FWHM at 5.9 key, 2 μs peaking time, when cooled to -5 degree C

The ATLAS Tracker Upgrade Short Strips Detectors for the sLHC

CERN Document Server

Soldevila, U; Lacasta, C; Marti i García, S; Miñano, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN around 2018 by about an order of magnitude, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for SLHC operation. In order to cope with the order of magnitude increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. A massive R&D programme is underway to develop silicon sensors with sufficient radiation hardness. New front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics ...

ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

CERN Document Server

Minano, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

Atlas Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

CERN Document Server

Minano, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a significant factor, with the upgraded machine dubbed Super-LHC. The ATLAS experiment will require a new tracker for Super-LHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will imply a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

Position calibration of silicon strip detector using quasi-elastic scattering of 16O+197Au

International Nuclear Information System (INIS)

Yan Wenqi; Hu Hailong; Zhang Gaolong

2013-01-01

Background: Elastic scattering is induced by weakly unstable nuclei. Generally, a good angular resolution for angular distribution of elastic scattering is needed. The silicon strip detector is often used for this kind of experiment. Purpose: In order to use silicon strip detector to study the elastic scattering of weakly unbound nuclei, it is important to get the information of its position calibration. It is well known that the elastic scattering of stable nuclei has a good angular distribution and many experimental data have been obtained. Methods: So the scattering of stable nuclei can be used to calibrate the position information of silicon strip detector. In this experiment, the positions of silicon strip detectors are calibrated using 101 MeV and 59 MeV 16 O scattering on the 197 Au target. Results: The quasi-elastic peaks can be observed in the silicon strip detectors and the counts of quasi-elastic 16 O can be obtained. The solid angles of the silicon strip detectors are calibrated by using alpha source which has three alpha energy values. The angular distribution of quasi-elastic scattering of 16 O+ 197 Au is obtained at these two energy values. Conclusions: The experimental data of angular distribution are reasonable and fit for the principle of angular distribution of elastic scattering. It is concluded that in the experiment these silicon strip detectors can accurately give the position information and can be used for the elastic scattering experiment. (authors)

ATLAS Tracker Upgrade: Silicon Strip Detectors for the sLHC

CERN Document Server

Koehler, M; The ATLAS collaboration

2010-01-01

To extend the physics potential of the Large Hadron Colider (LHC) at CERN, upgrades of the accelerator complex and the detectors towards the Super-LHC (sLHC) are foreseen. The upgrades, separated in Phase-1 and Phase-2, aim at increasing the luminosity while leaving the energy of the colliding particles (7 TeV per proton beam) unchanged. After the Phase-2 upgrade the instantaneous luminosity will be a factor of 5-10 higher than the design luminosity of the LHC. Due to the increased track rate and extreme radiation levels for the tracking detectors, upgrades of the detectors are necessary. At ATLAS, one of the two general purpose detectors at the LHC, the current inner detector will be replaced by an all-silicon tracker. This article describes the plans for the Phase-2 upgrade of the silicon strip detector of ATLAS. Radiation hard n-in-p silicon detectors with shorter strips than currently installed in ATLAS are planned. Results of measurements with these sensors and plans for module designs will be discussed.

Collected charge and Lorentz angle measurement on non-irradiated ATLAS silicon micro-strip sensors for the HL-LHC

Energy Technology Data Exchange (ETDEWEB)

Yildirim, Eda

2017-02-15

In this thesis, the collected charge and the Lorentz angle on non-irradiated and the irradiated miniature of the current test silicon micro-strip sensors (ATLAS12) of the future ATLAS inner tracker are measured. The samples are irradiated up to 5 x 10{sup 15} 1 MeV n{sub eq}/cm{sup 2} and some of them also measured after short-term annealing (80 min at 60 C). The measurements are performed at the DESY II test beam, which provides the advantage of tracking to suppress noise hits. The collected charge is measured at various bias voltages for each sample. The results are compared with the measurements performed using a Sr{sup 90} radioactive source. It is shown that the measurements with beam and radioactive source are consistent with each other, and the advantage of tracking at the beam measurements provides the measurement of collected charge on highly irradiated sensors at lower bias voltages. The Lorentz angle is measured for each sample at different magnetic field strengths between 0 T and 1 T, the results are extrapolated to 2 T, which is the magnetic field in the inner tracker of the ATLAS detector. Most of the measurements are performed at -500 V bias voltage, which is the planned operation bias voltage of the future strip tracker. Some samples are also measured at different bias voltages to observe the effect of bias voltage on the Lorentz angle. The signal reconstruction of the strip sensors are performed using the lowest possible signal-to-noise thresholds. For non-irradiated samples, the measured Lorentz angle agrees with the prediction of the BFK model. On the irradiated samples, the results suggest that the Lorentz angle decreases with increasing bias voltage due to the increasing electric field in the sensor. The Lorentz angle decreases with increasing irradiation level; however, if the sample is under-depleted, the effect of electric field dominates and the Lorentz angle increases. Once the irradiation level becomes too high, hence the collected charge

Resistive-strips micromegas detectors with two-dimensional readout

Science.gov (United States)

Byszewski, M.; Wotschack, J.

2012-02-01

Micromegas detectors show very good performance for charged particle tracking in high rate environments as for example at the LHC. It is shown that two coordinates can be extracted from a single gas gap in these detectors. Several micromegas chambers with spark protection by resistive strips and two-dimensional readout have been tested in the context of the R&D work for the ATLAS Muon System upgrade.

Numerical analysis of edge effects in side illuminated strip detectors for digital radiology

CERN Document Server

Krizaj, D

2000-01-01

The influence of edge defects on side illuminated X-ray strip detectors for digital radiology is investigated by numerical device modeling. By assuming positive fixed oxide charges on side and top surfaces simulations have shown strong curvature of the equipotential lines in the edge region. A fraction of the edge generated current surpasses the edge guard-ring junction and is collected by the readout strips. As a consequence, strips cannot be placed close to the edge of the structure and collection efficiency is reduced. An n-on-n instead of a p-on-n strip detector is proposed enabling collection of edge generated carriers by a very narrow guard-ring junction and placement of the readout strip close to the edge without increase of the strip leakage current.

Silicon strip detector qualification for the CMS experiment

Energy Technology Data Exchange (ETDEWEB)

Kaussen, Gordon

2008-10-06

To provide the best spatial resolution for the particle trajectory reconstruction and a very fast readout, the inner tracking system of CMS is build up of silicon detectors with a pixel tracker in the center surrounded by a strip tracker. The silicon strip tracker consists of so-called modules representing the smallest detection unit of the tracking device. These modules are mounted on higher-level structures called shells in the tracker inner barrel (TIB), rods in the tracker outer barrel (TOB), disks in the tracker inner disks (TID) and petals in the tracker end caps (TEC). The performance of the participating two shells of the TIB, four rods of the TOB and two petals of the TEC (representing about 1% of the final strip tracker) could be studied in different magnetic fields over a period of approximately two month using cosmic muon signals. The last test before inserting the tracker in the CMS experiment was the Tracker Slice Test performed in spring/summer 2007 at the Tracker Integration Facility (TIF) at CERN after installing all subdetectors in the tracker support tube. Approximately 25% of the strip tracker +z side was powered and read out using a cosmic ray trigger built up of scintillation counters. In total, about 5 million muon events were recorded under various operating conditions. These events together with results from commissioning runs were used to study the detector response like cluster charges, signal-to-noise ratios and single strip noise behaviour as well as to identify faulty channels which turned out to be in the order of a few per mille. The performance of the silicon strip tracker during these different construction stages is discussed in this thesis with a special emphasis on the tracker end caps. (orig.)

Silicon strip detector qualification for the CMS experiment

International Nuclear Information System (INIS)

Kaussen, Gordon

2008-01-01

To provide the best spatial resolution for the particle trajectory reconstruction and a very fast readout, the inner tracking system of CMS is build up of silicon detectors with a pixel tracker in the center surrounded by a strip tracker. The silicon strip tracker consists of so-called modules representing the smallest detection unit of the tracking device. These modules are mounted on higher-level structures called shells in the tracker inner barrel (TIB), rods in the tracker outer barrel (TOB), disks in the tracker inner disks (TID) and petals in the tracker end caps (TEC). The performance of the participating two shells of the TIB, four rods of the TOB and two petals of the TEC (representing about 1% of the final strip tracker) could be studied in different magnetic fields over a period of approximately two month using cosmic muon signals. The last test before inserting the tracker in the CMS experiment was the Tracker Slice Test performed in spring/summer 2007 at the Tracker Integration Facility (TIF) at CERN after installing all subdetectors in the tracker support tube. Approximately 25% of the strip tracker +z side was powered and read out using a cosmic ray trigger built up of scintillation counters. In total, about 5 million muon events were recorded under various operating conditions. These events together with results from commissioning runs were used to study the detector response like cluster charges, signal-to-noise ratios and single strip noise behaviour as well as to identify faulty channels which turned out to be in the order of a few per mille. The performance of the silicon strip tracker during these different construction stages is discussed in this thesis with a special emphasis on the tracker end caps. (orig.)

Parallel superconducting strip-line detectors: reset behaviour in the single-strip switch regime

International Nuclear Information System (INIS)

Casaburi, A; Heath, R M; Tanner, M G; Hadfield, R H; Cristiano, R; Ejrnaes, M; Nappi, C

2014-01-01

Superconducting strip-line detectors (SSLDs) are an important emerging technology for the detection of single molecules in time-of-flight mass spectrometry (TOF-MS). We present an experimental investigation of a SSLD laid out in a parallel configuration, designed to address selected single strip-lines operating in the single-strip switch regime. Fast laser pulses were tightly focused onto the device, allowing controllable nucleation of a resistive region at a specific location and study of the subsequent device response dynamics. We observed that in this regime, although the strip-line returns to the superconducting state after triggering, no effective recovery of the bias current occurs, in qualitative agreement with a phenomenological circuit simulation that we performed. Moreover, from theoretical considerations and by looking at the experimental pulse amplitude distribution histogram, we have the first confirmation of the fact that the phenomenological London model governs the current redistribution in these large area devices also after detection events. (paper)

First results from a silicon-strip detector with VLSI readout

International Nuclear Information System (INIS)

Anzivino, G.; Horisberger, R.; Hubbeling, L.; Hyams, B.; Parker, S.; Breakstone, A.; Litke, A.M.; Walker, J.T.; Bingefors, N.

1986-01-01

A 256-strip silicon detector with 25 μm strip pitch, connected to two 128-channel NMOS VLSI chips (Microplex), has been tested using straight-through tracks from a ruthenium beta source. The readout channels have a pitch of 47.5 μm. A single multiplexed output provides voltages proportional to the integrated charge from each strip. The most probable signal height from the beta traversals is approximately 14 times the rms noise in any single channel. (orig.)

ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the sLHC

International Nuclear Information System (INIS)

Lefebvre, Michel; Minano Moya, Mercedes

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. (authors)

Study of inter-strip gap effects and efficiency for full energy detection of double sided silicon strip detectors

International Nuclear Information System (INIS)

Fisichella, M.; Forneris, J.; Grassi, L.

2015-01-01

We performed a characterization of Double Sided Silicon Strip Detectors (DSSSD) with the aim to carry out a systematic study of the inter-strip effects on the energy measurement of charged particles. The dependence of the DSSSD response on ion, energy and applied bias has been investigated. (author)

Silicon Strip detectors for the ATLAS End-Cap Tracker at the HL-LHC

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00232570

Inside physics programme of the LHC different experiment upgrades are foreseen. After the phase-II upgrade of the ATLAS detector the luminosity will be increased up to 5-7.5x10E34 cm-2s-1. This will mean a considerable increase in the radiation levels, above 10E16 neq/cm2 in the inner regions. This thesis is focused on the development of silicon microstrip detectors enough radiation hard to cope with the particle fluence expected at the ATLAS detector during HL-LHC experiment. In particular on the electrical characterization of silicon sensors for the ATLAS End-Caps. Different mechanical and thermal tests are shown using a Petal core as well as the electrical characterization of the silicon sensors that will be used with the Petal structure. Charge collection efficiency studies are carried out on sensors with different irradiation fluences using the ALiBaVa system and two kinds of strips connection are also analized (DC and AC ganging) with a laser system. The Petalet project is presented and the electrical c...

Accelerated life test of an ONO stacked insulator film for a silicon micro-strip detector

International Nuclear Information System (INIS)

Okuno, Shoji; Ikeda, Hirokazu; Saitoh, Yutaka

1996-01-01

We have used to acquire the signal through an integrated capacitor for a silicon micro-strip detector. When we have been using a double-sided silicon micro-strip detector, we have required a long-term stability and a high feasibility for the integrated capacitor. An oxide-nitride-oxide (ONO) insulator film was theoretically expected to have a superior nature in terms of long term reliability. In order to test long term reliability for integrated capacitor of a silicon micro-strip detector, we made a multi-channel measuring system for capacitors

Results on a 10 micron pitch detector with individual strip readout

International Nuclear Information System (INIS)

Antinori, F.; Dameri, M.; Olcese, A.; Osculati, B.; Rossi, L.; Forino, A.; Marioli, D.; Meroni, C.; Redaelli, N.; Torretta, D.

1990-01-01

A 10 μm pitch silicon microstrip detector with individual strip readout via hybrid electronics has been produced and operated. Connections to digital and analog electronics is realized through an insensitive fan-out structure on the detector itself. The detector has been used in the WA82 experiment at the CERN Ω' spectrometer. (orig.)

Development and performance of double sided silicon strip detectors

International Nuclear Information System (INIS)

Batignani, G.; Forti, F.; Moneta, L.; Triggiani, G.; Bosisio, L.; Focardi, E.; Giorgi, M.A.; Parrini, G.; Tonelli, G.

1991-01-01

Microstrip silicon detectors with orthogonal readout on opposite sides have been designed and fabricated. The active area of each device is 25 cm 2 and the strip pitch is 25 μm on the junction side and 50 μm on the opposite ohmic side. A space resolution of 15 μm on the junction side (100 μm readout pitch) and 24 μm on the ohmic side (200 μm readout pitch) has been measured. We also report on AC-coupling chips, designed and fabricated in order to allow AC connection of the strips to the amplifiers. These chips are 6.4x5.0 mm 2 and have 100 μm pitch. Both AC-couplers and detectors have been installed as part of the ALEPH minivertex. (orig.)

A double sided silicon strip detector as a DRAGON end detector

CERN Document Server

Wrede, C; Rogers, J G; D'Auria, J M

2003-01-01

The new DRAGON facility (detector of recoils and gammas of nuclear reactions), located at the TRlUMF-ISAC Radioactive Beams facility in Vancouver, Canada is now operational. This facility is used to study radiative proton capture reactions in inverse kinematics (heavy ion beam onto a light gaseous target) with both stable beams and radioactive beams of mass A=13-26 in the energy range 0.15-1.5 MeV/u. A double sided silicon strip detector (DSSSD) has been used to detect recoil ions. Tests have been performed to determine the performance of this DSSSD.

Beam tests of lead tungstate crystal matrices and a silicon strip preshower detector for the CMS electromagnetic calorimeter

CERN Document Server

Auffray, Etiennette; Barney, D; Bassompierre, Gabriel; Benhammou, Ya; Blick, A M; Bloch, P; Bonamy, P; Bourotte, J; Buiron, L; Cavallari, F; Chipaux, Rémi; Cockerill, D J A; Dafinei, I; Davies, G; Depasse, P; Deiters, K; Diemoz, M; Dobrzynski, Ludwik; Donskov, S V; Mamouni, H E; Ercoli, C; Faure, J L; Felcini, Marta; Gautheron, F; Géléoc, M; Givernaud, Alain; Gninenko, S N; Godinovic, N; Graham, D J; Guillaud, J P; Guschin, E; Haguenauer, Maurice; Hillemanns, H; Hofer, H; Ille, B; Inyakin, A V; Jääskeläinen, S; Katchanov, V A; Kirn, T; Kloukinas, Kostas C; Korzhik, M V; Lassila-Perini, K M; Lebrun, P; Lecoq, P; Lecoeur, Gérard; Lecomte, P; Leonardi, E; Locci, E; Loos, R; Longo, E; MacKay, C K; Martin, E; Mendiburu, J P; Musienko, Yu V; Nédélec, P; Nessi-Tedaldi, F; Organtini, G; Paoletti, S; Pansart, J P; Peigneux, J P; Puljak, I; Qian, S; Reid, E; Renker, D; Rosowsky, A; Rosso, E; Rusack, R W; Rykaczewski, H; Schneegans, M; Seez, Christopher J; Semeniouk, I N; Shagin, P M; Sillou, D; Singovsky, A V; Sougonyaev, V; Soric, I; Verrecchia, P; Vialle, J P; Virdee, Tejinder S; Zhu, R Y

1998-01-01

Tests of lead tungstate crystal matrices carried out in high-energy electron beams in 1996, using new crystals, new APDs and an improved test set-up, confirm that an energy resolution of better than 0 .6% at 100 GeV can be obtained when the longitudinal uniformity of the struck crystal is adequate. Light loss measurements under low dose irradiation are reported. It is shown that there is no loss of energy resolution after irradiation and that the calibration change due to light loss can be tracked with a precision monitoring system. Finally, successuful tests with a preshower device, equipped wi th silicon strip detector readout, are described.

A silicon strip detector dose magnifying glass for IMRT dosimetry

International Nuclear Information System (INIS)

Wong, J. H. D.; Carolan, M.; Lerch, M. L. F.; Petasecca, M.; Khanna, S.; Perevertaylo, V. L.; Metcalfe, P.; Rosenfeld, A. B.

2010-01-01

Purpose: Intensity modulated radiation therapy (IMRT) allows the delivery of escalated radiation dose to tumor while sparing adjacent critical organs. In doing so, IMRT plans tend to incorporate steep dose gradients at interfaces between the target and the organs at risk. Current quality assurance (QA) verification tools such as 2D diode arrays, are limited by their spatial resolution and conventional films are nonreal time. In this article, the authors describe a novel silicon strip detector (CMRP DMG) of high spatial resolution (200 μm) suitable for measuring the high dose gradients in an IMRT delivery. Methods: A full characterization of the detector was performed, including dose per pulse effect, percent depth dose comparison with Farmer ion chamber measurements, stem effect, dose linearity, uniformity, energy response, angular response, and penumbra measurements. They also present the application of the CMRP DMG in the dosimetric verification of a clinical IMRT plan. Results: The detector response changed by 23% for a 390-fold change in the dose per pulse. A correction function is derived to correct for this effect. The strip detector depth dose curve agrees with the Farmer ion chamber within 0.8%. The stem effect was negligible (0.2%). The dose linearity was excellent for the dose range of 3-300 cGy. A uniformity correction method is described to correct for variations in the individual detector pixel responses. The detector showed an over-response relative to tissue dose at lower photon energies with the maximum dose response at 75 kVp nominal photon energy. Penumbra studies using a Varian Clinac 21EX at 1.5 and 10.0 cm depths were measured to be 2.77 and 3.94 mm for the secondary collimators, 3.52 and 5.60 mm for the multileaf collimator rounded leaf ends, respectively. Point doses measured with the strip detector were compared to doses measured with EBT film and doses predicted by the Philips Pinnacle treatment planning system. The differences were 1.1%�

Radiation tolerance of oxygenated n-strip read-out detectors

CERN Document Server

Allport, P P; Greenall, A

2003-01-01

Following earlier work on 'oxygenated' detectors in terms of charge collection efficiencies after proton irradiation, full-size detectors for the LHC have been processed with n-side read-out on oxygen enhanced n-type silicon substrates. Two hundred-micron-thick detectors have been inhomogeneously irradiated up to doses of 7 multiplied by 10**1**4p/cm**2 using 24 GeV protons from the CERN PS. Results are presented on the charge collection efficiencies as a function of operating voltage for regions of the detectors irradiated to different doses, using LHC speed analogue read-out electronics. The measurements confirm the expectations which led to our original proposal of such detectors which are now being envisaged for the silicon-based detector systems at the LHC designed to withstand the greatest doses. The possibilities for survival at an upgraded luminosity LHC (Super-LHC) are also briefly discussed.

Design and development of a vertex reconstruction for the CMS (Compact Muon Solenoid) data. Study of gaseous and silicon micro-strips detectors (MSGC)

International Nuclear Information System (INIS)

Moreau, St.

2002-12-01

The work presented in this thesis has contributed to the development of the Compact Muon Solenoid detector (CMS) that will be installed at the future Large Hadron Collider (LHC) which will start running in summer 2007. This report is organised in three parts: the study of gaseous detectors and silicon micro-strips detectors, and a development of a software for the reconstruction and analysis of CMS data in the framework of ORCA. First, the micro-strips gaseous detectors (MSGC) study was on the ultimate critical irradiation test before their substitution in the CMS tracker. This test showed a really small number of lost anodes and a stable signal to noise ratio. This test proved that the described MSGC fulfill all the requirements to be integrated in the CMS tracker. The following contribution described a study of silicon micro-strips detectors and its electronics exposed to a 40 MHz bunched LHC like beam. These tests indicated a good behaviour of the data acquisition and control system. The signal to noise ratio, the bunch crossing identification and the cluster finding efficiency had also be analysed. The last study concern the design and the development of an ORCA algorithm dedicates to secondary vertex reconstruction. This iterative algorithm aims to be use for b tagging. This part analyse also primary vertex reconstruction in events without and with pile up. (author)

Beam test of CSES silicon strip detector module

Science.gov (United States)

Zhang, Da-Li; Lu, Hong; Wang, Huan-Yu; Li, Xin-Qiao; Xu, Yan-Bing; An, Zheng-Hua; Yu, Xiao-xia; Wang, Hui; Shi, Feng; Wang, Ping; Zhao, Xiao-Yun

2017-05-01

The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. A low-noise analog ASIC VA140 was used in this study for DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400-800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and intensity distribution of incident particles of the DSSD module are presented. Supported by the XXX Civil Space Programme

Silicon Strip Detectors for the ATLAS sLHC Upgrade

CERN Document Server

Miñano, M; The ATLAS collaboration

2011-01-01

While the Large Hadron Collider (LHC) at CERN is continuing to deliver an ever-increasing luminosity to the experiments, plans for an upgraded machine called Super-LHC (sLHC) are progressing. The upgrade is foreseen to increase the LHC design luminosity by a factor ten. The ATLAS experiment will need to build a new tracker for sLHC operation, which needs to be suited to the harsh sLHC conditions in terms of particle rates. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. To successfully face the increased radiation dose, a new generation of extremely radiation hard silicon detectors is being designed. The left part of figure 1 shows the simulated layout for the ATLAS tracker upgrade to be installed in the volume taken up by the current ATLAS pixel, strip and transition radiation detectors. Silicon sensors with sufficient radiation hardness are the subject of an international R&D programme, working on pixel and strip sensors. The...

MUST: A silicon strip detector array for radioactive beam experiments

International Nuclear Information System (INIS)

Blumenfeld, Y.; Auger, F.; Sauvestre, J.E.; Marechal, F.; Ottini, S.; Alamanos, N.; Barbier, A.; Beaumel, D.; Bonnereau, B.; Charlet, D.; Clavelin, J.F.; Courtat, P.; Delbourgo-Salvador, P.; Douet, R.; Engrand, M.; Ethvignot, T.; Gillibert, A.; Khan, E.; Lapoux, V.; Lagoyannis, A.; Lavergne, L.; Lebon, S.; Lelong, P.; Lesage, A.; Le Ven, V.; Lhenry, I.; Martin, J.M.; Musumarra, A.; Pita, S.; Petizon, L.; Pollacco, E.; Pouthas, J.; Richard, A.; Rougier, D.; Santonocito, D.; Scarpaci, J.A.; Sida, J.L.; Soulet, C.; Stutzmann, J.S.; Suomijaervi, T.; Szmigiel, M.; Volkov, P.; Voltolini, G.

1999-01-01

A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and analog channels of the array in one crate placed adjacent to the reaction chamber and fully remote controlled, including pulse visualization on oscilloscopes. A stand alone data acquisition system devoted to the MUST array has been developed. Isotope identification of light charged particles over the full energy range has been achieved, and the capability of the system to measure angular distributions of states populated in inverse kinematics reactions has been demonstrated

Experience with the silicon strip detector of ALICE

NARCIS (Netherlands)

Nooren, G.J.L.

2009-01-01

The Silicon Strip Detector (SSD) forms the two outermost layers of the ALICE Inner Track- ing System (ITS), connecting the TPC with the inner layers of the ITS. The SSD consists of 1698 double-sided silicon microstrip modules, 95 μm pitch, distributed in two cylindrical bar- rels, whose radii are

Silicon μ-strip detectors with SVX chip readout

International Nuclear Information System (INIS)

Brueckner, W.; Dropmann, F.; Godbersen, M.; Konorov, I.; Koenigsmann, K.; Newsom, C.; Paul, S.; Povh, B.; Russ, J.; Timm, S.; Vorwalter, K.; Werding, R.

1994-01-01

A new silicon strip detector has been designed and constructed for a fixed target experiment at CERN. The system of about 30 000 channels is equipped with SVX chips and read out via a double buffer into Fastbus memory. Construction and performance during the actual data taking run are discussed. ((orig.))

The development of two ASIC's for a fast silicon strip detector readout system

International Nuclear Information System (INIS)

Christain, D.; Haldeman, M.; Yarema, R.; Zimmerman, T.; Newcomer, F.M.; VanBerg, R.

1989-01-01

A high speed, low noise readout system for silicon strip detectors is being developed for Fermilab E771, which will begin taking data in 1989. E771 is a fixed target experiment designed to study the production of B hadrons by an 800 GeV/c proton beam. The experimental apparatus consists of an open geometry magnetic spectrometer featuring good muon and electron identification and a 16000 channel silicon microstrip vertex detector. This paper reviews the design and prototyping of two application specific integrated circuits (ASIC's) an amplifier and a discriminator, which are being produced for the silicon strip detector readout system

Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

Energy Technology Data Exchange (ETDEWEB)

Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

2016-08-21

Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

Development of the H1 backward silicon strip detector

International Nuclear Information System (INIS)

Eick, W.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Newton, A.M.; Wilburn, C.D.; Horisberger, R.; Pitzl, D.; Haynes, W.J.; Noyes, G.

1996-10-01

The development and first results are described of a silicon strip detector telescope for the HERA experiment H1 designed to measure the polar angle of deep inelastic scattered electrons at small Bjorken x and low momentum transfers Q 2 . (orig.)

Development of the H1 backward silicon strip detector

International Nuclear Information System (INIS)

Eick, W.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Newton, A.M.; Wilburn, C.D.; Horisberger, R.; Pitzl, D.; Haynes, W.J.; Noyes, G.

1997-01-01

The development and first results are described of a silicon strip detector telescope for the HERA experiment H1 designed to measure the polar angle of deep inelastic scattered electrons at small Bjorken x and low momentum transfers Q 2 . (orig.)

Annealing Studies of irradiated p-type Sensors Designed for the Upgrade of ATLAS Phase-II Strip Tracker

CERN Document Server

Wiik-Fuchs, Liv Antje Mari; The ATLAS collaboration

2018-01-01

The upgrade for the High Luminosity LHC in 2025 will challenge the silicon strip detector performance with high fluence and long operation time. Sensors have been designed and tests on charge collection and electrical performance have been carried out in order to evaluate their behaviour. Besides that, it is important to understand and predict the long-term evolution of the sensor prop- erties. In this work, detailed studies on the annealing behaviour of ATLAS12 strip sensors designed by the ITK Strip Sensor Working Group and irradiated from 5 × 1013 neqcm−2 to 2 × 1015 neqcm−2 are presented. Systematic charge collection, leakage current and impedance measurements have been carried out during the annealing time at 23 and 60◦C until break-down or the appearance of charge multiplication. Sensors showing charge multiplication have been then kept at high voltage for a long time in order to monitor their stability. The difference in the annealing behaviour between the two temperatures has been analysed and...

Annealing studies of irradiated p-type sensors designed for the upgrade of ATLAS Phase-II Strip Tracker

CERN Document Server

Wiik-Fuchs, Liv Antje Mari; The ATLAS collaboration

2018-01-01

The upgrade for the High Luminosity LHC in 2025 will challenge the silicon strip detector performance with high fluence and long operation time. Sensors have been designed and tests on charge collection and electrical performance have been carried out in order to evaluate their behavior. Besides that, it is important to understand and predict the long-term evolution of the sensor properties. In this work, we present detailed studies on the annealing behavior of ATLAS12 strip sensors designed by the ITK Strip Sensor Working Group and irradiated from 510^13 to 210^15 n_eq/cm^2. Systematic charge collection, leakage current and impedance measurements have been carried out during the annealing time at 23 and 60°C until break-down or the appearance of charge multiplication. Sensors showing charge multiplication have been then kept at high voltage for a long time in order to monitor their stability. The difference in the annealing behavior between the two temperatures has been analyzed. From the impedance measurem...

Characterization of a dose verification system dedicated to radiotherapy treatments based on a silicon detector multi-strips

International Nuclear Information System (INIS)

Bocca, A.; Cortes Giraldo, M. A.; Gallardo, M. I.; Espino, J. M.; Aranas, R.; Abou Haidar, Z.; Alvarez, M. A. G.; Quesada, J. M.; Vega-Leal, A. P.; Perez Neto, F. J.

2011-01-01

In this paper, we present the characterization of a silicon detector multi-strips (SSSSD: Single Sided Silicon Strip Detector), developed by the company Micron Semiconductors Ltd. for use as a verification system for radiotherapy treatments.

Signal collection and position reconstruction of silicon strip detectors with 200 μm readout pitch

International Nuclear Information System (INIS)

Krammer, M.; Pernegger, H.

1997-01-01

Silicon strip detectors with large readout pitch and intermediate strips offer an interesting approach to reduce the number of readout channels in the tracking systems of future collider experiments without compromising too much on the spatial resolution. Various detector geometries with a readout pitch of 200 μm have been studied for their signal response and spatial resolution. (orig.)

The silicon strips Inner Tracker (ITk) of the ATLAS Phase-II upgrade detector

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00220523; The ATLAS collaboration

2018-01-01

The inner detector of the present ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the particle densities and radiation levels will be higher by as much as a factor of ten. The new detectors must be faster, they need to be more highly segmented, and covering more area. They also need to be more resistant to radiation, and they require much greater power delivery to the front-end systems. At the same time, they cannot introduce excess material which could undermine performance. For those reasons, the inner tracker of the ATLAS detector must be redesigned and rebuilt completely. The inner detector of the current detector will be replaced by the Inner Tracker (ITk). It consists of an innermost pixel detector and an outer strips tracker. This contribution focuses on the strips tracker. The basic detection unit of the ...

Performance of a large-area GEM detector read out with wide radial zigzag strips

Energy Technology Data Exchange (ETDEWEB)

Zhang, Aiwu, E-mail: azhang@fit.edu; Bhopatkar, Vallary; Hansen, Eric; Hohlmann, Marcus; Khanal, Shreeya; Phipps, Michael; Starling, Elizabeth; Twigger, Jessie; Walton, Kimberly

2016-03-01

A 1-meter-long trapezoidal Triple-GEM detector with wide readout strips was tested in hadron beams at the Fermilab Test Beam Facility in October 2013. The readout strips have a special zigzag geometry and run radially with an azimuthal pitch of 1.37 mrad to measure the azimuthal ϕ-coordinate of incident particles. The zigzag geometry of the readout reduces the required number of electronic channels by a factor of three compared to conventional straight readout strips while preserving good angular resolution. The average crosstalk between zigzag strips is measured to be an acceptable 5.5%. The detection efficiency of the detector is (98.4±0.2)%. When the non-linearity of the zigzag-strip response is corrected with track information, the angular resolution is measured to be (193±3) μrad, which corresponds to 14% of the angular strip pitch. Multiple Coulomb scattering effects are fully taken into account in the data analysis with the help of a stand-alone Geant4 simulation that estimates interpolated track errors.

A feasibility study of a PET/MRI insert detector using strip-line and waveform sampling data acquisition.

Science.gov (United States)

Kim, H; Chen, C-T; Eclov, N; Ronzhin, A; Murat, P; Ramberg, E; Los, S; Wyrwicz, Alice M; Li, Limin; Kao, C-M

2015-06-01

We are developing a time-of-flight Positron Emission Tomography (PET) detector by using silicon photo-multipliers (SiPM) on a strip-line and high speed waveform sampling data acquisition. In this design, multiple SiPMs are connected on a single strip-line and signal waveforms on the strip-line are sampled at two ends of the strip to reduce readout channels while fully exploiting the fast time response of SiPMs. In addition to the deposited energy and time information, the position of the hit SiPM along the strip-line is determined by the arrival time difference of the waveform. Due to the insensitivity of the SiPMs to magnetic fields and the compact front-end electronics, the detector approach is highly attractive for developing a PET insert system for a magnetic resonance imaging (MRI) scanner to provide simultaneous PET/MR imaging. To investigate the feasibility, experimental tests using prototype detector modules have been conducted inside a 9.4 Tesla small animal MRI scanner (Bruker BioSpec 94/30 imaging spectrometer). On the prototype strip-line board, 16 SiPMs (5.2 mm pitch) are installed on two strip-lines and coupled to 2 × 8 LYSO scintillators (5.0 × 5.0 × 10.0 mm 3 with 5.2 mm pitch). The outputs of the strip-line boards are connected to a Domino-Ring-Sampler (DRS4) evaluation board for waveform sampling. Preliminary experimental results show that the effect of interference on the MRI image due to the PET detector is negligible and that PET detector performance is comparable with the results measured outside the MRI scanner.

Response of CZT drift-strip detector to X- and gamma rays

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Gerward, Leif

2001-01-01

The drift-strip method for improving the energy response of a CdZnTe (CZT) detector to hard X- and gamma rays is discussed. Results for a 10 x 10 x 3 mm(3) detector crystal demonstrate a remarkable improvement of the energy resolution. The full width at half maximum (FWHM) is 2.18 keV (3.6%), 2...

A digital X-ray imaging system based on silicon strip detectors working in edge-on configuration

Energy Technology Data Exchange (ETDEWEB)

Bolanos, L. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Boscardin, M. [IRST, Fondazione Bruno Kessler, Via Sommarive 18, Povo, 38100 Trento (Italy); Cabal, A.E. [CEADEN, Calle 30 502 e/ 5ta y 7ma Avenida, Playa, Ciudad Habana (Cuba); Diaz, M. [InSTEC, Ave. Salvador Allende esq. Luaces, Quinta de los Molinos, Ciudad Habana (Cuba); Grybos, P.; Maj, P. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland); Prino, F. [Istituto Nazionale di Fisica Nucleare, Sezione di Torino, Via P. Giuria 1, 10125 Torino (Italy); Ramello, L. [Dipartimento di Scienze e Tecnologie Avanzate, Universita del Piemonte Orientale, Via T. Michel 11, 15100 Alessandria (Italy)], E-mail: luciano.ramello@mfn.unipmn.it; Szczygiel, R. [Faculty of Electrical Engineering, Automatics, Computer Science and Electronics, Department of Measurement and Instrumentation, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Cracow (Poland)

2009-09-21

We present the energy resolution and imaging performance of a digital X-ray imaging system based on a 512-strip silicon strip detector (SSD) working in the edge-on configuration. The SSDs tested in the system are 300 {mu}m thick with 1 or 2-cm-long strips and 100 {mu}m pitch. To ensure a very small dead area of the SSD working in edge-on configuration, the detector is cut perpendicular to the strips at a distance of only 20 {mu}m from the end of the strips. The 512-strip silicon detector is read out by eight 64-channel integrated circuits called DEDIX [Grybos et al., IEEE Trans. Nucl. Sci. NS-54 (2007) 1207]. The DEDIX IC operates in a single photon counting mode with two independent amplitude discriminators per channel. The readout electronic channel connected to a detector with effective input capacitance of about 2 pF has an average equivalent noise charge (ENC) of about 163 el. rms and is able to count 1 Mcps of average rate of input pulses. The system consisting of 512 channels has an excellent channel-to-channel uniformity-the effective threshold spread calculated to the charge-sensitive amplifier inputs is 12 el. rms (at one sigma level). With this system a few test images of a phantom have been taken in the 10-30 keV energy range.

Cross-talk studies on FPCB of double-sided silicon micro-strip detector

International Nuclear Information System (INIS)

Yang, Lei; Li, Zhankui; Li, Haixia; Wang, Pengfei; Wang, Zhusheng; Chen, Cuihong; Liu, Fengqiong; Li, Ronghua; Wang, Xiuhua; Li, Chunyan; Zu, Kailing

2014-01-01

Double-sided silicon micro-strip detector's parameters and a test method and the results of cross-talk of FPCB are given in this abstract. In addition, the value of our detector's readout signal has little relation to FPCB's cross-talk.

A readout system for position sensitive measurements of X-ray using silicon strip detectors

CERN Document Server

Dabrowski, W; Grybos, P; Idzik, M; Kudlaty, J

2000-01-01

In this paper we describe the development of a readout system for X-ray measurements using silicon strip detectors. The limitation concerning the inherent spatial resolution of silicon strip detectors has been evaluated by Monte Carlo simulation and the results are discussed. The developed readout system is based on the binary readout architecture and consists of two ASICs: RX32 front-end chip comprising 32 channels of preamplifiers, shapers and discriminators, and COUNT32 counter chip comprising 32 20-bit asynchronous counters and the readout logic. This work focuses on the design and performance of the front-end chip. The RX32 chip has been optimised for a low detector capacitance, in the range of 1-3 pF, and high counting rate applications. It can be used with DC coupled detectors allowing the leakage current up to a few nA per strip. For the prototype chip manufactured in a CMOS process all basic parameters have been evaluated by electronic measurements. The noise below 140 el rms has been achieved for a ...

Testbeam evaluation of silicon strip modules for ATLAS Phase - II Strip Tracker Upgrade

CERN Document Server

Blue, Andrew; The ATLAS collaboration; Ai, Xiaocong; Allport, Phillip; Arling, Jan-Hendrik; Atkin, Ryan Justin; Bruni, Lucrezia Stella; Carli, Ina; Casse, Gianluigi; Chen, Liejian; Chisholm, Andrew; Cormier, Kyle James Read; Cunningham, William Reilly; Dervan, Paul; Diez Cornell, Sergio; Dolezal, Zdenek; Dopke, Jens; Dreyer, Etienne; Dreyling-Eschweiler, Jan Linus Roderik; Escobar, Carlos; Fabiani, Veronica; Fadeyev, Vitaliy; Fernandez Tejero, Javier; Fleta Corral, Maria Celeste; Gallop, Bruce; Garcia-Argos, Carlos; Greenall, Ashley; Gregor, Ingrid-Maria; Greig, Graham George; Guescini, Francesco; Hara, Kazuhiko; Hauser, Marc Manuel; Huang, Yanping; Hunter, Robert Francis Holub; Keller, John; Klein, Christoph; Kodys, Peter; Koffas, Thomas; Kotek, Zdenek; Kroll, Jiri; Kuehn, Susanne; Lee, Steven Juhyung; Liu, Yi; Lohwasser, Kristin; Meszarosova, Lucia; Mikestikova, Marcela; Mi\\~nano Moya, Mercedes; Mori, Riccardo; Moser, Brian; Nikolopoulos, Konstantinos; Peschke, Richard; Pezzullo, Giuseppe; Phillips, Peter William; Poley, Anne-luise; Queitsch-Maitland, Michaela; Ravotti, Federico; Rodriguez Rodriguez, Daniel

2018-01-01

The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of \\mbox{$7.5\\times10^{34}\\;\\mathrm{cm}^{-2}\\mathrm{s}^{-1}$}. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over $1x10^{15}$ 1 MeV neutron equivalent per $cm^{2}$ in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II test beam facility to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before irradiation. The DURANTA telescope was used to obtain a pointing...

Developing silicon strip detectors with a large-scale commercial foundry

Energy Technology Data Exchange (ETDEWEB)

König, A., E-mail: axel.koenig@oeaw.ac.at [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Bartl, U. [Infineon Technologies Austria AG, Villach (Austria); Bergauer, T.; Dragicevic, M. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria); Hacker, J. [Infineon Technologies Austria AG, Villach (Austria); Treberspurg, W. [Institute of High Energy Physics, Austrian Academy of Sciences, Vienna (Austria)

2016-07-11

Since 2009 the Institute of High Energy Physics (HEPHY) in Vienna is developing a production process for planar silicon strip sensors on 6-in. wafers together with the semiconductor manufacturer Infineon Technologies. Four runs with several batches of wafers, each comprising six different sensors, were manufactured and characterized. A brief summary of the recently completed 6-in. campaign is given. Milestones in sensor development as well as techniques to improve the sensor quality are discussed. Particular emphasis is placed on a failure causing areas of defective strips which accompanied the whole campaign. Beam tests at different irradiation facilities were conducted to validate the key capability of particle detection. Another major aspect is to prove the radiation hardness of sensors produced by Infineon. Therefore, neutron irradiation studies were performed.

Micro-strip Metal Foil Detectors for the Beam Profile Monitoring

CERN Document Server

Pugatch, V M; Fedorovitch, O A; Mikhailenko, A V; Prystupa, S V; Pylypchenko, Y

2005-01-01

The Micro-strip Metal Foil Detectors (MMFD) designed and used for the Beam Profile Monitoring (BPM) are discussed. Fast particles hitting a metal strip initiate Secondary Electron Emission (SEE) which occurs at 10 - 50 nm surface layers of a strip. The SEE yield is measured by a sensitive Charge Integrator with built-in current-to-frequency converter (1 Hz per 1 fA). The MMFD (deposited onto the 20 μm thick Si-wafer) with 32 Al strips (10 μm wide, 32 μm pitch) has been used for the BPM of the 32 MeV alpha-particle beam at the MPIfK (Heidelberg) Tandem generator for Single-Event-Upset studies of the BEETLE micro-chip. Similar MMFD (0.5 μm thick Ni-strips) with totally removed Si-wafer (by plasma-chemistry, at the working area of 8 x 10 mm2) has been applied for the on-line X-ray BPM at the HASYLAB (DESY). The number of photons (11.3 GeV, mean X-ray energy 18 keV) producing out of a strip a single SEE was evaluated as (1.5 ±0.5)* 104. MMFD has demonstrated stable...

Development of a Compton camera for medical applications based on silicon strip and scintillation detectors

Energy Technology Data Exchange (ETDEWEB)

Krimmer, J., E-mail: j.krimmer@ipnl.in2p3.fr [Institut de Physique Nucléaire de Lyon, Université de Lyon, Université Lyon 1, CNRS/IN2P3 UMR 5822, 69622 Villeurbanne cedex (France); Ley, J.-L. [Institut de Physique Nucléaire de Lyon, Université de Lyon, Université Lyon 1, CNRS/IN2P3 UMR 5822, 69622 Villeurbanne cedex (France); Abellan, C.; Cachemiche, J.-P. [Aix-Marseille Université, CNRS/IN2P3, CPPM UMR 7346, 13288 Marseille (France); Caponetto, L.; Chen, X.; Dahoumane, M.; Dauvergne, D. [Institut de Physique Nucléaire de Lyon, Université de Lyon, Université Lyon 1, CNRS/IN2P3 UMR 5822, 69622 Villeurbanne cedex (France); Freud, N. [Université de Lyon, CREATIS, CNRS UMR5220, Inserm U1044, INSA - Lyon, Université Lyon 1, Centre Léon Bérard (France); Joly, B.; Lambert, D.; Lestand, L. [Clermont Université, Université Blaise Pascal, CNRS/IN2P3, Laboratoire de Physique Corpusculaire, BP 10448, F-63000 Clermont-Ferrand (France); Létang, J.M. [Université de Lyon, CREATIS, CNRS UMR5220, Inserm U1044, INSA - Lyon, Université Lyon 1, Centre Léon Bérard (France); Magne, M. [Clermont Université, Université Blaise Pascal, CNRS/IN2P3, Laboratoire de Physique Corpusculaire, BP 10448, F-63000 Clermont-Ferrand (France); and others

2015-07-01

A Compton camera is being developed for the purpose of ion-range monitoring during hadrontherapy via the detection of prompt-gamma rays. The system consists of a scintillating fiber beam tagging hodoscope, a stack of double sided silicon strip detectors (90×90×2 mm{sup 3}, 2×64 strips) as scatter detectors, as well as bismuth germanate (BGO) scintillation detectors (38×35×30 mm{sup 3}, 100 blocks) as absorbers. The individual components will be described, together with the status of their characterization.

Development of readout electronics for monolithic integration with diode strip detectors

International Nuclear Information System (INIS)

Hosticka, B.J.; Wrede, M.; Zimmer, G.; Kemmer, J.; Hofmann, R.; Lutz, G.

1984-03-01

Parallel in - serial out analog readout electronics integrated with silicon strip detectors will bring a reduction of two orders of magnitude in external electronics. The readout concept and the chosen CMOS technology solve the basic problem of low noise and low power requirements. A hybrid solution is an intermediate step towards the final goal of monolithic integration of detector and electronics. (orig.)

Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

Science.gov (United States)

Ghosh, P.

2016-01-01

The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm, wavelength = 1060 nm). The pulse with a duration of ≈ 10 ns and power ≈ 5 mW of the laser pulse is selected such, that the absorption of the laser light in the 300 μm thick silicon sensor produces ≈ 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.

Incomplete charge collection in an HPGe double-sided strip detector

International Nuclear Information System (INIS)

Hayward, Jason; Wehe, David

2008-01-01

For gamma-ray detection, high-purity germanium (HPGe) has long been the standard for energy resolution, and double-sided strip detectors (DSSDs) offer the possibility of sub-millimeter position resolution. Our HPGe DSSD is 81 mm in diameter, 11-mm thick, and has 3-mm strip pitch with a gap width of 500 μm. In this work, we focus on characterizing just the interactions that occur between collecting strips. Simulation and measurement results for our HPGe DSSD show that the gap between strips is the most position-sensitive region. But, spectra collected from events that occur in and near the gaps are complicated by: (1) incomplete charge-carrier collection, or charge loss; (2) signal variance introduced by charge-carrier cloud size, orientation, and lateral spreading; and (3) the difficulty of distinguishing single interactions from multiple close interactions. Using tightly, collimated beams of monoenergetic gamma rays, the measured energy spectra at the gap center show that incomplete charge collection is significant in our detector at 356 and 662 keV, resulting in degradation of the photopeak efficiency. Additionally, close interactions are identifiable in the spectra. Thus, close interactions must be identified on an event-by-event basis in order to precisely identify gap interaction position or make charge-loss corrections at these energies. Furthermore, spectral differences are observed between anode and cathode gaps, and a possible reason for this asymmetry is proposed

Characterisation of strip silicon detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

Science.gov (United States)

Poley, L.; Blue, A.; Bates, R.; Bloch, I.; Díez, S.; Fernandez-Tejero, J.; Fleta, C.; Gallop, B.; Greenall, A.; Gregor, I.-M.; Hara, K.; Ikegami, Y.; Lacasta, C.; Lohwasser, K.; Maneuski, D.; Nagorski, S.; Pape, I.; Phillips, P. W.; Sperlich, D.; Sawhney, K.; Soldevila, U.; Ullan, M.; Unno, Y.; Warren, M.

2016-07-01

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6·1034 cm-2s-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1·1016 1 MeV neq/cm2. In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 μm strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.

Ion-implanted capacitively coupled silicon strip detectors with integrated polysilicon bias resistors processed on a 100 mm wafer

International Nuclear Information System (INIS)

Hietanen, I.; Lindgren, J.; Orava, R.; Tuuva, T.; Voutilainen, M.; Brenner, R.; Andersson, M.; Leinonen, K.; Ronkainen, H.

1991-01-01

Double-sided silicon strip detectors with integrated coupling capacitors and polysilicon resistors have been processed on a 100 mm wafer. A detector with an active area of 19x19 mm 2 was connected to LSI readout electronics and tested. The strip pitch of the detector is 25 μm on the p-side and 50 μm on the n-side. The readout pitch is 50 μm on both sides. The number of readout strips is 774 and the total number of strips is 1161. On the p-side a signal-to-noise of 35 has been measured using a 90 Sr β-source. The n-side has been studied using a laser. (orig.)

Performance tests of developed silicon strip detector by using a 150 GeV electron beam

International Nuclear Information System (INIS)

Hyun, Hyojung; Jung, Sunwoo; Kah, Dongha; Kang, Heedong; Kim, Hongjoo; Park, Hwanbae

2008-01-01

We manufactured and characterized a silicon micro-strip detector to be used in a beam tracker. A silicon detector features a DC-coupled silicon strip sensor with VA1 Prime2 analog readout chips. The silicon strip sensors have been fabricated on 5-in. wafers at Electronics and Telecommunications Research Institute (Daejeon, Korea). The silicon strip sensor is single-sided and has 32 channels with a 1 mm pitch, and its active area is 3.2 by 3.2 cm 2 with 380 μm thickness. The readout electronics consists of VA hybrid, VA Interface, and FlashADC and Control boards. Analog signals from the silicon strip sensor were being processed by the analog readout chips on the VA hybrid board. Analog signals were then changed into digital signals by a 12 bit 25 MHz FlashADC. The digital signals were read out by the Linux-operating PC through the FlashADC-USB2 interface. The DAQ system and analysis programs were written in the framework of ROOT package. The beam test with the silicon detector had been performed at CERN beam facility. We used a 150 GeV electron beam out of the SPS(Super Proton Synchrotron) H2 beam line. We present beam test setup and measurement result of signal-to-noise ratio of each strip channel. (author)

A Proposal to Upgrade the Silicon Strip Detector

International Nuclear Information System (INIS)

Matis, Howard; Michael, LeVine; Jonathan, Bouchet; Stephane, Bouvier; Artemios, Geromitsos; Gerard, Guilloux; Sonia, Kabana; Christophe, Renard; Howard, Matis; Jim, Thomas; Vi Nham, Tram

2007-01-01

The STAR Silicon Strip Detector (SSD) was built by a collaboration of Nantes, Strasbourg and Warsaw collaborators. It is a beautiful detector; it can provide 500 mu m scale pointing resolution at the vertex when working in combination with the TPC. It was first used in Run 4, when half the SSD was installed in an engineering run. The full detector was installed for Run 5 (the Cu-Cu run) and the operation and performance of the detector was very successful. However, in preparation for Run 6, two noisy ladders (out of 20) were replaced and this required that the SSD be removed from the STAR detector. The re-installation of the SSD was not fully successful and so for the next two Runs, 6 and 7, the SSD suffered a cooling system failure that allowed a large fraction of the ladders to overheat and become noisy, or fail. (The cause of the SSD cooling failure was rather trivial but the SSD could not be removed between Runs 6 and 7 due to the inability of the STAR detector to roll along its tracks at that time.)

Performance updating of CdZnTe strip-drift detectors

DEFF Research Database (Denmark)

Shorohov, M.; Tsirkunova, I.; Loupilov, A.

2007-01-01

59.6 and 662 keV correspondingly. Recently, significant progress was done in CdZnTe crystals growth technology. In the present paper we present preliminary result of performance updating of CdZnTe strip-drift detectors based on crystal of 10 x 10 x 6 mm 3 produced by Yinnel Tech company. Results...

Charge Division Readout of a Two-Dimensional Germanium Strip Detector

National Research Council Canada - National Science Library

Kroeger, R. A; Inderhees, S. E; Johnson, W. N; Kinzer, R. L; Kurfess, J. D; Gehrels, N

1993-01-01

.... The four data channels are stored as an event list for subsequent processing. We form a response map over the detector surface in order to locate the position of each interaction with the spatial resolution of the strip pitch, in our case 9 mm...

Signal development in irradiated silicon detectors

CERN Document Server

Kramberger, Gregor; Mikuz, Marko

2001-01-01

This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

Prototyping of Silicon Strip Detectors for the Inner Tracker of the ALICE Experiment

CERN Document Server

Sokolov, Oleksiy

2006-01-01

The ALICE experiment at CERN will study heavy ion collisions at a center-of-mass energy 5.5∼TeV per nucleon. Particle tracking around the interaction region at radii r<45 cm is done by the Inner Tracking System (ITS), consisting of six cylindrical layers of silicon detectors. The outer two layers of the ITS use double-sided silicon strip detectors. This thesis focuses on testing of these detectors and performance studies of the detector module prototypes at the beam test. Silicon strip detector layers will require about 20 thousand HAL25 front-end readout chips and about 3.5 thousand hybrids each containing 6 HAL25 chips. During the assembly procedure, chips are bonded on a patterned TAB aluminium microcables which connect to all the chip input and output pads, and then the chips are assembled on the hybrids. Bonding failures at the chip or hybrid level may either render the component non-functional or deteriorate its the performance such that it can not be used for the module production. After each bond...

Assembly and Electrical Tests of the First Full-size Forward Module for the ATLAS ITk Strip Detector

CERN Document Server

Garcia-Argos, Carlos; The ATLAS collaboration

2018-01-01

The ATLAS experiment will replace the existing Inner Detector by an all-silicon detector named the Inner Tracker (ITk) for the High Luminosity LHC upgrades. In the outer region of the Inner Tracker is the strip detector, which consists of a four layer barrel and six discs to each side of the barrel, with silicon-strip modules as basic units. Each module is composed of a sensor and one or more flex circuits that hold the read-out electronics. In the experiment, the modules are mounted on support structures with integrated power and cooling. The modules are designed with geometries that accommodate the central and forward regions, with rectangular sensors in the barrels and wedge shaped sensors in the end-caps. The strips lengths and pitch sizes vary according to the occupancy of the region. In this contribution, we present the construction and results of the electrical tests of the first full-size module of the innermost forward region, named \\textit{Ring 0} in the ATLAS ITk strip detector nomenclature. This m...

Assembly and Electrical Tests of the First Full-size Forward Module for the ATLAS ITk Strip Detector

CERN Document Server

Garcia-Argos, Carlos; The ATLAS collaboration

2017-01-01

The ATLAS experiment will replace the existing Inner Detector by an all-silicon detector named the Inner Tracker (ITk) for the High Luminosity LHC upgrades. In the outer region of the Inner Tracker is the strip detector, which consists of a four layer barrel and six discs to each side of the barrel, with silicon-strip modules as basic units. Each module is composed of a sensor and one or more flex circuits that hold the read-out electronics. In the experiment, the modules are mounted on support structures with integrated power and cooling. The modules are designed with geometries that accommodate the central and forward regions, with rectangular sensors in the barrels and wedge shaped sensors in the end-caps. The strips lengths and pitch sizes vary according to the occupancy of the region. In this contribution, we present the construction and the results of the electrical tests of the first full-size module of the innermost forward region, named Ring 0 in the ATLAS ITk strip detector nomenclature. This module...

Application of a wedge strip anode in micro-pattern gaseous detectors

International Nuclear Information System (INIS)

Tian Yang; Yang Yigang; Li Yulan; Li Yuanjing

2013-01-01

The wedge strip anode (WSA) has been widely used in 2-D position-sensitive detectors. A circular WSA with an effective diameter of 52 mm is successfully coupled to a tripe gas electron multiplier (GEM) detector through a simple resistive layer. A spatial resolution of 440 μm (FWHM) is achieved for a 10 kVp X-ray using 1 atm Ar:CO 2 =70:30 gas. The simple electronics of only three channels makes it very useful in applications strongly requiring simple interface design, e.g. sealed tubes and high pressure detectors. (authors)

Electromagnetic noise studies in a silicon strip detector, used as part of a luminosity monitor at LEP

Science.gov (United States)

Ødegaard, Trygve; Tafjord, Harald; Buran, Torleiv

1995-02-01

As part of the luminosity monitor, SAT, in the DELPHI [1] experiment at CERN's Large Electron Positron collider, a tracking detector constructed from silicon strip detector elements was installed in front of an electromagnetic calorimeter. The luminosity was measured by counting the number of Bhabha events at the interaction point of the electron and the positron beans. The tracking detector reconstructs from the interaction point and the calorimeter measures the corresponding particles' energies. The SAT Tracker [2] consists of 504 silicon strip detectors. The strips are DC-coupled to CMOS VLSI-chips, baptized Balder [3,4]. The chip performs amplification, zero-suppression, digitalisation, and multiplexing. The requirements of good space resolution and high efficiency put strong requirements on noise control. A short description of the geometry and the relevant circuit layout is given. We describe the efforts made to minimise the electromagnetic noise in the detector and present some numbers of the noise level using various techniques.

Electromagnetic noise studies in a silicon strip detector, used as part of a luminosity monitor at LEP

International Nuclear Information System (INIS)

Oedegaard, T.; Tafjord, H.; Buran, T.

1994-12-01

As part of the luminosity monitor SAT in the DELPHI experiment at CERN's Large Electron Positron collider, a tracking detector constructed from silicon strip detector elements was installed in front of an electromagnetic calorimeter. The luminosity was measured by counting the number of Bhabha events at the interaction point of the electron and the positron beams. The tracking detector reconstructs tracks from the interaction point and the calorimeter measures the corresponding particles' energies.The SAT Tracker consists of 504 silicon strip detectors. The strips are DC-coupled to CMOS VLSI-chips, baptized Balder. The chip performs amplification, zero-suppression, digitalisation, and multiplexing. The requirements of good space resolution and high efficiency put strong requirements on noise control. A short description of the geometry and the relevant circuit layout is given. The authors describe the efforts made to minimise the electromagnetic noise in the detector and present some numbers of the noise level using various techniques. 11 refs., 5 figs., 4 tabs

First implementation of the MEPHISTO binary readout architecture for strip detectors

International Nuclear Information System (INIS)

Fischer, P.

2001-01-01

Today's front-end readout chips for multi-channel silicon strip detectors use pipeline-like structures for temporary storage of hit information until arrival of a trigger signal. This approach leads to large-area chips when long trigger latencies are necessary. The MEPHISTO architecture uses a different concept. Hit strips are identified in real time and only the relevant binary hit information is stored in FIFOs. For the typical occupancies in LHC detectors of ∼1 hit per clock cycle this architecture requires less than half the chip area of a typical binary pipeline. This reduces the system cost considerably. At a lower data rate, operation with very long trigger latencies or even without any trigger is possible due to the real-time data sparsification. The Mephisto II architecture is presented and the expected performance is discussed

Timing characteristics of a two-dimensional multi-wire cathode strip detector for fission fragments

International Nuclear Information System (INIS)

Vind, R.P.; Joshi, B.N.; Jangale, R.V.; Inkar, A.L.; Prajapati, G.K.; John, B.V.; Biswas, D.C.

2014-01-01

In the recent past, a gas filled two-dimensional multi-wire cathode strip detector (MCSD) was developed for the detection of fission fragments (FFs). The position resolution was found to be about 1.0 and 1.5 mm in X and Y directions respectively. The detector has three electrode planes consisting of cathode strip (X-plane), anode wires and split-cathode wires (Y-plane). Each thin wire of the anode plane placed between the two cathode planes is essentially independent and behaves like a proportional counter. The construction of the detector in detail has been given in our earlier paper. The position information has been obtained by employing high impedance discrete delay line read out method for extracting position information in X and Y-directions. In this work, the timing characteristics of MCSD detector are reported to explore the possible use of this detector for the measurement of the mass of the fission fragments produced in heavy ion induced fission reactions

Development of the RAIDS extreme ultraviolet wedge and strip detector. [Remote Atmospheric and Ionospheric Detector System

Science.gov (United States)

Kayser, D. C.; Chater, W. T.; Christensen, A. B.; Howey, C. K.; Pranke, J. B.

1988-01-01

In the next few years the Remote Atmospheric and Ionospheric Detector System (RAIDS) package will be flown on a Tiros spacecraft. The EUV spectrometer experiment contains a position-sensitive detector based on wedge and strip anode technology. A detector design has been implemented in brazed alumina and kovar to provide a rugged bakeable housing and anode. A stack of three 80:1 microchannel plates is operated at 3500-4100 V. to achieve a gain of about 10 to the 7th. The top MCP is to be coated with MgF for increased quantum efficiency in the range of 50-115 nm. A summary of fabrication techniques and detector performance characteristics is presented.

Performance of irradiated silicon microstrip detectors

International Nuclear Information System (INIS)

Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, M.; Meschini, M.; Parrini, G.; Pieri, M.

1999-01-01

Silicon microstrip devices to be installed in Large Hadron Collider (LHC) tracking detectors will have to operate in a high radiation environment. We report on performance studies of silicon microstrip detectors irradiated with neutrons or protons, up to fluences comparable to the first ten years of running at LHC. Obtained results show that irradiated detectors can still be operated with satisfactory signal-to-noise ratio,and in the case of inhomogeneously type inverted detector a very good position resolution is achieved regardless of the zone crossed by the particle

Petalet prototype for the ATLAS silicon strip detector upgrade

Energy Technology Data Exchange (ETDEWEB)

Sperlich, Dennis [Humboldt-Universitaet zu Berlin (Germany); Gregor, Ingrid-Maria; Bloch, Ingo; Keller, John Stakely; Lohwasser, Kristin; Poley, Louise; Zakharchuk, Nataliia; Diez Cornell, Sergio [DESY (Germany); Hauser, Marc Manuel; Mori, Riccardo; Kuehl, Susanne; Parzefall, Ulrich [Albert-Ludwigs Universitaet Freiburg (Germany)

2015-07-01

To achieve more precise measurements and to search new physics phenomena, the luminosity at the LHC is expected to be increased during a series of upgrades in the next years. The latest scheduled upgrade, called the High Luminosity LHC (HL-LHC) is proposed to provide instantaneous luminosity of 5 x 10{sup 34} cm{sup 2}s{sup -1}. The increased luminosity and the radiation damage will affect the current Inner Tracker. In order to cope with the higher radiation dose and occupancy, the ATLAS experiment plans to replace the current Inner Detector with a new all-silicon tracker consisting of ∝8 m{sup 2} pixel and ∝192 m{sup 2} strip detectors. In response to the needs, highly modular structures will be used for the strip system, called Staves for the barrel region and Petals for the end-caps region. A small-scaled prototype for the Petal, the Petalet, is built to study some specialties of this complex wedge-shaped structures. The Petalet consists of one large and two small sized sensors. This report focuses on the recent progress in the prototyping of the Petalet and their electrical performances.

Charge collection and depth sensing investigation on CZT drift strip detectors

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Caroli, E.

2010-01-01

CZT drift strip detectors with Planar Transverse Field (PTF) configuration are suitable for high energy astrophysics instrumentation, where high efficiency, high energy and position resolution are required from the sensors. We report on experimental investigations on the DTU Space developed CZT d...

Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

International Nuclear Information System (INIS)

Larionov, Pavel

2016-10-01

The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10 14 cm -2 in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10 14 n eq /cm 2 . The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational stability of these

Method and apparatus for nuclear logging making use of lithium detectors and equipment for gamma ray stripping; Fremgangsmaate og apparat til nuklear logging med bruk av litiummontasjer og anordning for gammastraalestripping

Energy Technology Data Exchange (ETDEWEB)

Perry, C.A.; Daigle, G.A.; Bruck, W.D. [and others

1998-05-11

The patent deals with a borehole logging tool where a pair of spaced-apart lithium detectors is lowered into a borehole traversing a sursurface formation. The formation is irradiated with bursts of neutrons, and the neutrons returning to the borehole are detected by thermal neutron detectors. The dieaway gamma ray spectra provide information on the formation porosity. A MWD system includes a programmable gain amplifier and gamma ray stripping means. 30 figs.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

OpenAIRE

Poley, Luise; Bloch, Ingo; Edwards, Sam; Friedrich, Conrad; Gregor, Ingrid-Maria; Jones, Tim; Lacker, Heiko; Pyatt, Simon; Rehnisch, Laura; Sperlich, Dennis; Wilson, John

2015-01-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy gl...

Digital autoradiography using silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Overdick, M.

1998-05-01

Spatially resolving radiation detection systems operating in real time can be used to acquire autoradiographic images. An overview over alternatives to traditional autoradiography is given and the special features of these filmless methods are discussed. On this basis the design of a system for digital autoradiography using silicon strip detectors is presented. Special emphasis is put on the physical background of the detection process in the semiconductor and on the self-triggering read-out technique. The practical performance of the system is analyzed with respect to energy and spatial resolution. This analysis is complemented by case studies from cell biology (especially electrophoresis), botany and mineralogy. Also the results from a time-resolved autoradiographic experiment are presented. (orig.) 80 refs.

Silicon strip detector system for Fermilab E706

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Plants, D; Shepard, P F; Wilkins, R [Pittsburgh Univ., PA (USA); Hossain, S [Northeastern Univ., Boston, MA (USA)

1984-09-15

Fermilab Experiment E706 is an experiment to study direct photon production in hadron-hadron collisions at the Fermilab Tevatron II. A part of the charged particle spectrometer is a silicon strip detector system used to determine the position of interaction vertices in the production target and to provide angular formation about the secondary hadrons produced in a collision. We present some design criteria, as well as the results of tests of a wafer similar to those to be used in the experiment.

Prototyping of petalets for the Phase-II upgrade of the silicon strip tracking detector of the ATLAS experiment

Science.gov (United States)

Kuehn, S.; Benítez, V.; Fernández-Tejero, J.; Fleta, C.; Lozano, M.; Ullán, M.; Lacker, H.; Rehnisch, L.; Sperlich, D.; Ariza, D.; Bloch, I.; Díez, S.; Gregor, I.; Keller, J.; Lohwasser, K.; Poley, L.; Prahl, V.; Zakharchuk, N.; Hauser, M.; Jakobs, K.; Mahboubi, K.; Mori, R.; Parzefall, U.; Bernabéu, J.; Lacasta, C.; Marco-Hernandez, R.; Rodriguez Rodriguez, D.; Santoyo, D.; Solaz Contell, C.; Soldevila Serrano, U.; Affolder, T.; Greenall, A.; Gallop, B.; Phillips, P. W.; Cindro, V.

2018-03-01

In the high luminosity era of the Large Hadron Collider, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.

Assembly of an endcap of the ATLAS silicon strip detector at NIKHEF, Amsterdam.

CERN Multimedia

Ginter, P

2005-01-01

Assembly of an endcap of the ATLAS silicon strip detector (SCT) at NIKHEF, Amsterdam. Technicians are mounting the power distribution cables on the cylinder that houses nine disks with silicon sensors.

Radiation damage status of the ATLAS silicon strip detectors (SCT)

CERN Document Server

Kondo, Takahiko; The ATLAS collaboration

2017-01-01

The Silicon microstrip detector system (SCT) of the ATLAS experiment at LHC has been working well for about 7 years since 2010. The innermost layer has already received a few times of 10**13 1-MeV neutron-equivalent fluences/cm2. The evolutions of the radiation damage effects on strip sensors such as leakage current and full depletion voltages will be presented.

Measurement of the spatial resolution of wide-pitch silicon strip detectors with large incident angle

International Nuclear Information System (INIS)

Kawasaki, T.; Hazumi, M.; Nagashima, Y.

1996-01-01

As a part of R ampersand D for the BELLE experiment at KEK-B, we measured the spatial resolution of silicon strip detectors for particles with incident angles ranging from 0 degrees to 75 degrees. These detectors have strips with pitches of 50, 125 and 250 μm on the ohmic side. We have obtained the incident angle dependence which agreed well with a Monte Carlo simulation. The resolution was found to be 11 μm for normal incidence with a pitch of 50 μm, and 29 μm for incident angle of 75 degrees with a pitch of 250μm

Detector and Front-end electronics for ALICE and STAR silicon strip layers

CERN Document Server

Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

1998-01-01

Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

A silicon strip detector used as a high rate focal plane sensor for electrons in a magnetic spectrometer

CERN Document Server

Miyoshi, T; Fujii, Y; Hashimoto, O; Hungerford, E V; Sato, Y; Sarsour, M; Takahashi, T; Tang, L; Ukai, M; Yamaguchi, H

2003-01-01

A silicon strip detector was developed as a focal plane sensor for a 300 MeV electron spectrometer and operated in a high rate environment. The detector with 500 mu m pitch provided good position resolution for electrons crossing the focal plane of the magnetic spectrometer system which was mounted in Hall C of the Thomas Jefferson National Accelerator Facility. The design of the silicon strip detector and the performance under high counting rate (<=2.0x10 sup 8 s sup - sup 1 for approx 1000 SSD channels) and high dose are discussed.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

CERN Document Server

INSPIRE-00407830; Bloch, Ingo; Edwards, Sam; Friedrich, Conrad; Gregor, Ingrid M.; Jones, T; Lacker, Heiko; Pyatt, Simon; Rehnisch, Laura; Sperlich, Dennis; Wilson, John

2016-05-24

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigatio...

Systematic irradiation studies and quality assurance of silicon strip sensors for the CBM Silicon Tracking System

Energy Technology Data Exchange (ETDEWEB)

Larionov, Pavel

2016-10-15

The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is designed to investigate the phase diagram of strongly interacting matter at neutron star core densities under laboratory conditions. This work is a contribution to the development of the main tracking detector of the CBM experiment - the Silicon Tracking System (STS), designed to provide the tracking and the momentum information for charged particles in a high multiplicity environment. The STS will be composed of about 900 highly segmented double-sided silicon strip sensors and is expected to face a harsh radiation environment up to 1 x 10{sup 14} cm{sup -2} in 1 MeV neutron equivalent fluence after several years of operation. The two most limiting factors of the successful operation of the system are the radiation damage and the quality of produced silicon sensors. It is therefore of importance to ensure both the radiation tolerance of the STS sensors and their quality during the production phase. The first part of this work details the investigation of the radiation tolerance of the STS sensors. Series of irradiations of miniature sensors as well as full-size prototype sensors were performed with reactor neutrons and 23 MeV protons to a broad range of fluences, up to 2 x 10{sup 14} n{sub eq}/cm{sup 2}. The evolution of the main sensor characteristics (leakage current, full depletion voltage and charge collection) was extensively studied both as a function of accumulated fluence and time after irradiation. In particular, charge collection measurements of miniature sensors demonstrated the ability of the sensors to yield approx. 90% to 95% of the signal after irradiation up to the lifetime fluence, depending on the readout side. First results on the charge collection performance of irradiated full-size prototype sensors have been obtained, serving as an input data for further final signal-to-noise evaluation in the whole readout chain. Operational

Light output optimization for the Cherenkov strips of the Barrel detector of FOPI

Energy Technology Data Exchange (ETDEWEB)

Petrovici, M; Gobbi, A; Hildenbrand, K D [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany); Kirejczyk, M; Sikora, B [Warsaw Univ. (Poland); Chelepov, V; Dulin, M; Frolov, S; Judentsov, A; Krylov, V; Nikitin, A; Smolyankin, V; Zhilin, A [Institute for Theoretical and Expermental Physics - ITEP, B. Chermushkinskaya ulitsa 25, RU-117 259 Moskva, (Russian Federation); Mgebrishvili, G; Vasiliev, M [I.V. Kurchatov Institute of Atomic Energy, Ulitsa Kurchatova 46, RU-123 182 Moskva, (Russian Federation)

1994-12-31

Available as short communication only. A systematic study on how to increase the number of the photoelectrons (PE) in the phototubes at the end of the bent light guides has been undertaken prior to the final assembly of the Cherenkov strips of the Barrel detector for the 4{pi} facility FOPI at GSI-Darmstadt. This was motivated by the observation that with the mass-produced strips only 0.8 PE were found for cosmic rays incident at the center of the 240 cm long strips, a value too low to ensure a decent detection of even {beta}=1 particles. The method used was based on a careful calibration of the amplitude spectra by means of measuring single-electron peaks in the attached tubes. As the consequence of these studies the wave-length shifter (amino G salt) concentration in the distilled water of strips was optimized and a cell of 1000 mm with a mirror on one side has been used. These changes brought a improvement factor of 9 in the number of PE at 85 cm distance from the light guide. This results led to the decision of changing the former design of the Cherenkov layer. In addition during production of these final modules it has been observed that variances between different strips in terms of the number of PE could be minimized by an outer polishing of the plexiglas cells. Finally, during mounting of the detectors the used phototubes were selected according to their performance in peak to valley ratio of the single electron peaks spectrum. (Author) 3 Figs., 2 Refs.

The Control System for the CMS Strip Tracking Detector

CERN Document Server

Fahrer, Manuel; Chen, Jie; Dierlamm, Alexander; Frey, Martin; Masetti, Lorenzo; Militaru, Otilia; Shah, Yousaf; Stringer, Robert; Tsirou, Andromachi

2008-01-01

The Tracker of the CMS silicon strip tracking detector covers a surface of 206 m2. 9648128 channels are available on 75376 APV front-end chips on 15232 modules, built of 24328 silicon sensors. The power supply of the detector modules is split up in 1944 power supplies with two low voltage for front end power and two high voltage channels each for the bias voltage of the silicon sensors. In addition 356 low voltage channels are needed to power the control chain. The tracker will run at -20°C at low relative humidity for at least 10 years. The Tracker Control System handles all interdependencies of control, low and high voltages, as well as fast ramp downs in case of higher than allowed temperatures or currents in the detector and experimental cavern problems. This is ensured by evaluating $10^{4}$ power supply parameters, $10^{3}$ information from Tracker Safety System and $10^{5}$ information from the tracker front end.

Initial beam test results from a silicon-strip detector with VLSI readout

International Nuclear Information System (INIS)

Adolphsen, C.; Litke, A.; Schwarz, A.

1986-01-01

Silicon detectors with 256 strips, having a pitch of 25 μm, and connected to two 128 channel NMOS VLSI chips each (Microplex), have been tested in relativistic charged particle beams at CERN and at the Stanford Linear Accelerator Center. The readout chips have an input channel pitch of 47.5 μm and a single multiplexed output which provides voltages proportional to the integrated charge from each strip. The most probable signal height from minimum ionizing tracks was 15 times the rms noise in any single channel. Two-track traversals with a separation of 100 μm were cleanly resolved

Effects of the interstrip gap on the efficiency and response of Double Sided Silicon Strip Detectors

Directory of Open Access Journals (Sweden)

Torresi D.

2016-01-01

Full Text Available In this work the effects of the segmentation of the electrodes of Double Sided Silicon Strip Detectors (DSSSDs are investigated. In order to characterize the response of the DSSSDs we perform a first experiment by using tandem beams of different energies directly sent on the detector and a second experiment by mean of a proton microbeam. Results show that the effective width of the inter-strip region and the efficiency for full energy detection, varies with both detected energy and bias voltage. The experimental results are qualitatively reproduced by a simplified model based on the Shockley-Ramo-Gunn framework.

Evaluation of the data of the HERA-B vertex detector with regards to the physical properties of the applied silicon strip counters

International Nuclear Information System (INIS)

Wagner, W.

1999-01-01

The HERA-B experiment at the DESY laboratory in Hamburg is dedicated to measuring CP-violation in the decays of neutral B-mesons. The primary purpose of the experiment in the measurement of the CP-asymmetry in the decay channel B 0 → J/ψK S 0 . In order to identify the B-mesons and to determine the time-dependent asymmetry, the decay length anti Δ anti l of the B-mesons must be measured to an accuracy of σ Δl ≤ 500 μm. To achieve this aim, HERA-B has a vertex detector which is based on double-sided silicon strip detectors mounted in a Roman pot system. One important specification of the vertex detector is to allow independent tracking with an efficiency above 95%. Therefore, it is required to select hits on the strip detectors with an efficiency above 99% and optimize the suppression of noise. This thesis describes a detailed investigation of the behaviour of the silicon strip detectors used in the vertex detector. The first part presents measurements performed in the laboratory using a tunable infrared dye laser to simulate the passage of charged particles through the detector. This includes measurements of the charge division between adjacent readout strips and mapping of the detector depletion. The results of the measurements agree excellently with the predictions from a detailed model calculation carried out in this thesis. The second part of the thesis the analysis of data recorded with the HERA-B vertex detector during the commissioning run of spring 1999. The analysis focusses on the investigation of cluster shapes and cluster sizes. In particular, the dependence of these distributions from the selection cuts is analyzed. Additionally, the differences between the two detector designs used, p-spray and p-stop detectors with intermediate strip or without respectively, are worked out. The measured distributions agree very well with the predictions from a model calculation taking all relevant detector parameters into account. The results of the data

Expert System for the LHC CMS Cathode Strip Chambers (CSC) detector

Energy Technology Data Exchange (ETDEWEB)

Rapsevicius, Valdas, E-mail: valdas.rapsevicius@cern.ch [Fermi National Accelerator Laboratory, Batavia, IL (United States); Vilnius University, Didlaukio g. 47-325, LT-08303 Vilnius (Lithuania); Juska, Evaldas, E-mail: evaldas.juska@cern.ch [Fermi National Accelerator Laboratory, Batavia, IL (United States)

2014-02-21

Modern High Energy Physics experiments are of high demand for a generic and consolidated solution to integrate and process high frequency data streams by applying experts' knowledge and inventory configurations. In this paper we present the Expert System application that was built for the Compact Muon Solenoid (CMS) Cathode Strip Chambers (CSC) detector at the Large Hadron Collider (LHC) aiming to support the detector operations and to provide integrated monitoring. The main building blocks are the integration platform, rule-based complex event processing engine, ontology-based knowledge base, persistent storage and user interfaces for results and control.

Characterization and calibration of radiation-damaged double-sided silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Kaya, L. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Vogt, A., E-mail: andreas.vogt@ikp.uni-koeln.de [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Reiter, P.; Birkenbach, B.; Hirsch, R.; Arnswald, K.; Hess, H.; Seidlitz, M.; Steinbach, T.; Warr, N.; Wolf, K. [Institut für Kernphysik, Universität zu Köln, D-50937 Köln (Germany); Stahl, C.; Pietralla, N. [Institut für Kernphysik, Technische Universität Darmstadt, D-64291 Darmstadt (Germany); Limböck, T.; Meerholz, K. [Physikalische Chemie, Universität zu Köln, D-50939 Köln (Germany); Lutter, R. [Maier-Leibnitz-Laboratorium, Ludwig-Maximilians-Universität München, D-85748 Garching (Germany)

2017-05-21

Double-sided silicon strip detectors (DSSSD) are commonly used for event-by-event identification of charged particles as well as the reconstruction of particle trajectories in nuclear physics experiments with stable and radioactive beams. Intersecting areas of both p- and n-doped front- and back-side segments form individual virtual pixel segments allowing for a high detector granularity. DSSSDs are employed in demanding experimental environments and have to withstand high count rates of impinging nuclei. The illumination of the detector is often not homogeneous. Consequently, radiation damage of the detector is distributed non-uniformly. Position-dependent incomplete charge collection due to radiation damage limits the performance and lifetime of the detectors, the response of different channels may vary drastically. Position-resolved charge-collection losses between front- and back-side segments are investigated in an in-beam experiment and by performing radioactive source measurements. A novel position-resolved calibration method based on mutual consistency of p-side and n-side charges yields a significant enhancement of the energy resolution and the performance of radiation-damaged parts of the detector.

A test-bench for measurement of electrical static parameters of strip silicon detectors

International Nuclear Information System (INIS)

Golutvin, I.A.; Dmitriev, A.Yu.; Elsha, V.V.

2003-01-01

An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control. (author)

A Test-Bench for Measurement of Electrical Static Parameters of Strip Silicon Detectors

CERN Document Server

Golutvin, I A; Danilevich, V G; Dmitriev, A Yu; Elsha, V V; Zamiatin, Y I; Zubarev, E V; Ziaziulia, F E; Kozus, V I; Lomako, V M; Stepankov, D V; Khomich, A P; Shumeiko, N M; Cheremuhin, A E

2003-01-01

An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for measurement data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control.

Prototype Strip Barrel Modules for the ATLAS ITk Strip Detector

CERN Document Server

Sawyer, Craig; The ATLAS collaboration

2017-01-01

The module design for the Phase II Upgrade of the new ATLAS Inner Tracker (ITk) detector at the LHC employs integrated low mass assembly using single-sided flexible circuits with readout ASICs and a powering circuit incorporating control and monitoring of HV, LV and temperature on the module. Both readout and powering circuits are glued directly onto the silicon sensor surface resulting in a fully integrated, extremely low radiation length module which simultaneously reduces the material requirements of the local support structure by allowing a reduced width stave structure to be employed. Such a module concept has now been fully demonstrated using so-called ABC130 and HCC130 ASICs fabricated in 130nm CMOS technology to readout ATLAS12 n+-in-p silicon strip sensors. Low voltage powering for these demonstrator modules has been realised by utilising a DCDC powerboard based around the CERN FEAST ASIC. This powerboard incorporates an HV multiplexing switch based on a Panasonic GaN transistor. Control and monitori...

A simple pulse shape discrimination technique applied to a silicon strip detector

International Nuclear Information System (INIS)

Figuera, P.; Lu, J.; Amorini, F.; Cardella, G.; DiPietro, A.; Papa, M.; Musumarra, A.; Pappalardo, G.; Rizzo, F.; Tudisco, S.

2001-01-01

Full text: Since the early sixties, it has been known that the shape of signals from solid state detectors can be used for particle identification. Recently, this idea has been revised in a group of papers where it has been shown that the shape of current signals from solid state detectors is mainly governed by the combination of plasma erosion time and charge carrier collection time effects. We will present the results of a systematic study on a pulse shape identification method which, contrary to the techniques proposed, is based on the use of the same electronic chain normally used in the conventional time of flight technique. The method is based on the use of charge preamplifiers, low polarization voltages (i.e. just above full depletion ones), rear side injection of the incident particles, and on a proper setting of the constant fraction discriminators which enhances the dependence of the timing output on the rise time of the input signals (which depends on the charge and energy of the incident ions). The method has been applied to an annular Si strip detector with an inner radius of about 16 mm and an outer radius of about 88 mm. The detector, manufactured by Eurisys Measures (Type Ips.73.74.300.N9), is 300 microns thick and consists of 8 independent sectors each divided into 9 circular strips. On beam tests have been performed at the cyclotron of the Laboratori Nazionali del Sud in Catania using a 25.7 MeV/nucleon 58 Ni beam impinging on a 51 V and 45 Sc composite target. Excellent charge identification from H up to the Ni projectile has been observed and typical charge identification thresholds are: ∼ 1.7 MeV/nucleon for Z ≅ 6, ∼ 3.0 MeV/nucleon for Z ≅ 11, and ∼ 5.5 MeV/nucleon for Z ≅ 20. Isotope identification up to A ≅ 13 has been observed with an energy threshold of about 6 MeV/nucleon. The identification quality has been studied as a function of the constant fraction settings. The method has been applied to all the 72 independent strips

Status of the Silicon Strip Detector at CMS

CERN Document Server

Simonis, H J

2008-01-01

The CMS Tracker is the world's largest silicon detector. It has only recently been moved underground and installed in the 4T solenoid. Prior to this there has been an intensive testing on the surface, which confirms that the detector system fully meets the design specifications. Irradiation studies with the sensor material shows that the system will survive for at least 10 years in the harsh radiation environment prevailing within the Tracker volume. The planning phase for SLHC as the successor of LHC, with a ten times higher luminosity at the same energy has already begun. First R\\&D studies for more robust detector materials and a new Tracker layout have started.

Radiography imaging by 64 and 128 micro-strips crystalline detectors at different X-ray energies

International Nuclear Information System (INIS)

Leyva, A.; Cabal, A.; Montano, L. M.; Fontaine, M.; Mora, R. de la; Padilla, F.

2006-01-01

This paper summarizes some results obtained in the evaluation of the performance of position sensitive detectors in track reconstruction in particle physics experiments. Crystalline silicon micro-strips detectors with 64 and 128 channels and 100 μm pitch were used to obtain radiographic digital images of different objects. The more relevant figures for spectrometry applications were measured and reported. Two-dimensional images were obtained by scanning the object with a collimated beam using different source-target-detector positioning and three sources of X-rays (8.04, 18.55 and 22.16 keV). The counts acquired by each strip correspond to a particular collimator position during the scan, thus serving to reconstruct the image of the exposed to X-ray object and to reveal its internal structure. The use of some techniques for image processing allow the further improvement of the radiography quality. The preliminary results obtained using in-house made and accreditation mammography phantoms allow to infer that such detectors can be successfully introduced in the digital mammography practice. (Author)

EMC Diagnosis and Corrective Actions for Silicon Strip Tracker Detectors

Energy Technology Data Exchange (ETDEWEB)

Arteche, F.; /CERN /Imperial Coll., London; Rivetta, C.; /SLAC

2006-06-06

The tracker sub-system is one of the five sub-detectors of the Compact Muon Solenoid (CMS) experiment under construction at CERN for the Large Hadron Collider (LHC) accelerator. The tracker subdetector is designed to reconstruct tracks of charged sub-atomic particles generated after collisions. The tracker system processes analogue signals from 10 million channels distributed across 14000 silicon micro-strip detectors. It is designed to process signals of a few nA and digitize them at 40 MHz. The overall sub-detector is embedded in a high particle radiation environment and a magnetic field of 4 Tesla. The evaluation of the electromagnetic immunity of the system is very important to optimize the performance of the tracker sub-detector and the whole CMS experiment. This paper presents the EMC diagnosis of the CMS silicon tracker sub-detector. Immunity tests were performed using the final prototype of the Silicon Tracker End-Caps (TEC) system to estimate the sensitivity of the system to conducted noise, evaluate the weakest areas of the system and take corrective actions before the integration of the overall detector. This paper shows the results of one of those tests, that is the measurement and analysis of the immunity to CM external conducted noise perturbations.

A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

Energy Technology Data Exchange (ETDEWEB)

Irmler, C., E-mail: christian.irmler@oeaw.ac.at [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Higuchi, T. [University of Tokyo, Kavli Institute for Physics and Mathematics of the Universe, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Ishikawa, A. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Joo, C. [Seoul National University, High Energy Physics Laboratory, 25-107 Shinlim-dong, Kwanak-gu, Seoul 151-742 (Korea, Republic of); Kah, D.H.; Kang, K.H. [Kyungpook National University, Department of Physics, 1370 Sankyuk Dong, Buk Gu, Daegu 702-701 (Korea, Republic of); Rao, K.K. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Kato, E. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Mohanty, G.B. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Negishi, K. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Onuki, Y.; Shimizu, N. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Tsuboyama, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Valentan, M. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

2013-12-21

B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO{sub 2} system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules.

A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

International Nuclear Information System (INIS)

Irmler, C.; Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I.; Higuchi, T.; Ishikawa, A.; Joo, C.; Kah, D.H.; Kang, K.H.; Rao, K.K.; Kato, E.; Mohanty, G.B.; Negishi, K.; Onuki, Y.; Shimizu, N.; Tsuboyama, T.; Valentan, M.

2013-01-01

B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO 2 system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules

Characterization of 3D-DDTC strip sensors with passing-through columns

Energy Technology Data Exchange (ETDEWEB)

Povoli, M., E-mail: povoli@disi.unitn.it [Dipartimento di Ingegneria e Scienza dellInformazione, Universitá di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38123 Povo di Trento (Italy); Betancourt, C. [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Boscardin, M. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento (Italy); Dalla Betta, G.-F. [Dipartimento di Ingegneria e Scienza dellInformazione, Universitá di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); INFN, Sezione di Padova (Gruppo Collegato di Trento), Via Sommarive, 14, I-38123 Povo di Trento (Italy); Giacomini, G. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento (Italy); Lecini, B. [Dipartimento di Ingegneria e Scienza dellInformazione, Universitá di Trento, Via Sommarive, 14, I-38123 Povo di Trento (Italy); Kuehn, S.; Parzefall, U. [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Zorzi, N. [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive, 18, I-38123 Povo di Trento (Italy)

2013-12-01

We report on the pre-irradiation electrical and functional characterization of newly developed 3D silicon strip detectors fabricated at FBK. Critical layout aspects present in the previous version of the technology were solved, and the new sensors are showing encouraging results both in terms of electrical properties and charge collection efficiency.

NaI(Tl) scintillator detectors stripping procedure for air kerma measurements of diagnostic X-ray beams

Science.gov (United States)

Oliveira, L. S. R.; Conti, C. C.; Amorim, A. S.; Balthar, M. C. V.

2013-03-01

Air kerma is an essential quantity for the calibration of national standards used in diagnostic radiology and the measurement of operating parameters used in radiation protection. Its measurement within the appropriate limits of accuracy, uncertainty and reproducibility is important for the characterization and control of the radiation field for the dosimetry of the patients submitted to diagnostic radiology and, also, for the assessment of the system which produces radiological images. Only the incident beam must be considered for the calculation of the air kerma. Therefore, for energy spectrum, counts apart the total energy deposition in the detector must be subtracted. It is necessary to establish a procedure to sort out the different contributions to the original spectrum and remove the counts representing scattered photons in the detector's materials, partial energy deposition due to the interactions in the detector active volume and, also, the escape peaks contributions. The main goal of this work is to present spectrum stripping procedure, using the MCNP Monte Carlo computer code, for NaI(Tl) scintillation detectors to calculate the air kerma due to an X-ray beam usually used in medical radiology. The comparison between the spectrum before stripping procedure against the reference value showed a discrepancy of more than 63%, while the comparison with the same spectrum after the stripping procedure showed a discrepancy of less than 0.2%.

Double-sided FoxFET biased microstrip detectors

International Nuclear Information System (INIS)

Allport, P.P.; Carter, J.R.; Dunwoody, U.C.; Gibson, V.; Goodrick, M.J.; Beck, G.A.; Carter, A.A.; Martin, A.J.; Pritchard, T.W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Wilburn, C.D.

1994-01-01

The use of the field effect transistor, integrated onto AC-coupled silicon detectors, as a novel technique for biasing the implanted p + strips [P.P. Allport et al., Nucl. Instr. and Meth. A 310 (1991) 155], was first employed for the OPAL microvertex detector. The detector has proved very successful, with ladders of three single-sided detectors showing signal/noise of 22 : 1 with MX5 readout electronics [P.P. Allport et al., Nucl. Instr. and Meth. A 324 (1993) 34; Nucl. Phys. B (Proc. Suppl.) 32 (1993) 208]. This technique has been extended to bias also the n + strips and p strips on the ohmic side of a double-sided detector [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Full-size detectors with orthogonal readout have been fabricated by Micron and tested with MX7 readout on both sides. Both the junction and ohmic sides of these detectors have similar signal/noise values to those for single-sided wafers [P.P. Allport et al., Nucl. Instr. and Meth. A, to be submitted]. Test structures have been irradiated with beta particles to study the radiation hardness of the devices, and probe station electrical measurements of the detectors and test structures are presented. ((orig.))

Mechanical studies towards a silicon micro-strip super module for the ATLAS inner detector upgrade at the high luminosity LHC

International Nuclear Information System (INIS)

Barbier, G; Cadoux, F; Clark, A; Favre, Y; Ferrere, D; Gonzalez-Sevilla, S; Iacobucci, G; Marra, D La; Perrin, E; Seez, W; Endo, M; Hanagaki, K; Hara, K; Ikegami, Y; Nakamura, K; Takubo, Y; Terada, S; Jinnouchi, O; Nishimura, R; Takashima, R

2014-01-01

It is expected that after several years of data-taking, the Large Hadron Collider (LHC) physics programme will be extended to the so-called High-Luminosity LHC, where the instantaneous luminosity will be increased up to 5 × 10 34  cm −2  s −1 . For the general-purpose ATLAS experiment at the LHC, a complete replacement of its internal tracking detector will be necessary, as the existing detector will not provide the required performance due to the cumulated radiation damage and the increase in the detector occupancy. The baseline layout for the new ATLAS tracker is an all-silicon-based detector, with pixel sensors in the inner layers and silicon micro-strip detectors at intermediate and outer radii. The super-module (SM) is an integration concept proposed for the barrel strip region of the future ATLAS tracker, where double-sided stereo silicon micro-strip modules (DSM) are assembled into a low-mass local support (LS) structure. Mechanical aspects of the proposed LS structure are described

A silicon strip module for the ATLAS inner detector upgrade in the super LHC collider

Energy Technology Data Exchange (ETDEWEB)

Gonzalez-Sevilla, S., E-mail: Sergio.Gonzalez.Sevilla@cern.ch [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Barbier, G. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Anghinolfi, F. [European Organization for Nuclear Research, CERN CH-1211, Geneva 23 (Switzerland); Cadoux, F.; Clark, A. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Dabrowski, W.; Dwuznik, M. [AGH University of Sceince and Technology, Faculty of Physics and Applied Computer Science, Krakow (Poland); Ferrere, D. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Garcia, C. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); Ikegami, Y. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Hara, K. [University of Tsukuba, School of Pure and Applied Sciences, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan); Jakobs, K. [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Kaplon, J. [European Organization for Nuclear Research, CERN CH-1211, Geneva 23 (Switzerland); Koriki, T. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan); Lacasta, C. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); La Marra, D. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Marti i Garcia, S. [IFIC, Instituto de Fisica Corpuscular (CSIC-Universitat de Valencia), Edificio Investigacion Paterna, Apartado 22085 46071 Valencia (Spain); Parzefall, U. [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Pohl, M. [DPNC, University of Geneva, CH 1211 Geneva 4 (Switzerland); Terada, S. [KEK, High Energy Accelerator Research Organization, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

2011-04-21

The ATLAS detector is a general purpose experiment designed to fully exploit the discovery potential of the Large Hadron Collider (LHC) at a nominal luminosity of 10{sup 34} cm{sup -2} s{sup -1}. It is expected that after several years of successful data-taking, the LHC physics program will be extended by increasing the peak luminosity by one order of magnitude. For ATLAS, an upgrade scenario will imply the complete replacement of the Inner Detector (ID), since the current tracker will not provide the required performance due to cumulated radiation damage and a dramatic increase in the detector occupancy. In this paper, a proposal of a double-sided silicon micro-strip module for the short-strip region of the future ATLAS ID is presented. The expected thermal performance based upon detailed FEA simulations is discussed. First electrical results from a prototype version of the next generation readout front-end chips are also shown.

A silicon strip module for the ATLAS inner detector upgrade in the super LHC collider

CERN Document Server

Gonzalez-Sevilla, S; Parzefall, U; Clark, A; Ikegami, Y; Hara, K; Garcia, C; Jakobs, K; Dwuznik, M; Terada, S; Barbier, G; Koriki, T; Lacasta, C; Unno, Y; Anghinolfi, F; Cadoux, F; Garcia, S M I; Ferrere, D; La Marra, D; Pohl, M; Dabrowski, W; Kaplon, J

2011-01-01

The ATLAS detector is a general purpose experiment designed to fully exploit the discovery potential of the Large Hadron Collider (LHC) at a nominal luminosity of 10(34)cm(-2)s(-1). It is expected that after several years of successful data-taking, the LHC physics program will be extended by increasing the peak luminosity by one order of magnitude. For ATLAS, an upgrade scenario will imply the complete replacement of the Inner Detector (ID), since the current tracker will not provide the required performance due to cumulated radiation damage and a dramatic increase in the detector occupancy. In this paper, a proposal of a double-sided silicon micro-strip module for the short-strip region of the future ATLAS ID is presented. The expected thermal performance based upon detailed FEA simulations is discussed. First electrical results from a prototype version of the next generation readout front-end chips are also shown. (C) 2010 Elsevier B.V. All rights reserved.

Transparent silicon strip sensors for the optical alignment of particle detector systems

International Nuclear Information System (INIS)

Blum, W.; Kroha, H.; Widmann, P.

1995-05-01

Modern large-area precision tracking detectors require increasing accuracy for the alignment of their components. A novel multi-point laser alignment system has been developed for such applications. The position of detector components with respect to reference laser beams is monitored by semi-transparent optical position sensors which work on the principle of silicon strip photodiodes. Two types of custom designed transparent strip sensors, based on crystalline and on amorphous silicon as active material, have been studied. The sensors are optimised for the typical diameters of collimated laser beams of 3-5 mm over distances of 10-20 m. They provide very high position resolution, on the order of 1 μm, uniformly over a wide measurement range of several centimeters. The preparation of the sensor surfaces requires special attention in order to achieve high light transmittance and minimum distortion of the traversing laser beams. At selected wavelengths, produced by laser diodes, transmission rates above 90% have been achieved. This allows to position more than 30 sensors along one laser beam. The sensors will be equipped with custom designed integrated readout electronics. (orig.)

Effect of SiO$_{2}$ passivating layer in segmented silicon planar detectors on the detector response

CERN Document Server

Verbitskaya, Elena; Eremin, Vladimir; Golubkov, S; Konkov, K; Roe, Shaun; Ruggiero, G; Sidorov, A; Weilhammer, Peter

2004-01-01

Silicon detectors with a fine segmentation (micropixel and microstrip) are the main type of detectors used in the inner trackers of LHC experiments. Due to the high luminosity of the LHC machines they are required to have a fast response to fit the short shaping time of 25 ns and to be radiation hard. Evaluation of silicon microstrip detectors developed for the ATLAS silicon tracker and carried out under collaboration of CERN and PTI has shown the reversal of the pulse polarity in the detector response to short- range radiation. Since the negative signal is of about 30% of the normal positive one, the effect strongly reduces the charge collection efficiency in irradiated detectors. The investigation presents the consideration on the origin of a negative response in Si microstrip detectors and the experimental proof of the model. The study of the effect has been carried out using "baby" strip detectors with a special design: each strip has a window in a metallization, which covers the p/sup +/ implant. The sca...

Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinski (Finland); Singh, P; Engels, E Jr; Shepard, J; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

1993-03-01

AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a [sup 137]Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 Mrad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are discribed. (orig.).

Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

International Nuclear Information System (INIS)

Laakso, M.; Helsinki Univ.; Singh, P.; Engels, E. Jr.; Shepard, P.

1992-02-01

AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a 137 Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 MRad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are described. 13 refs

Fast timing readout for silicon strip detectors

International Nuclear Information System (INIS)

Jhingan, A.; Saneesh, N.; Kumar, M.

2016-01-01

The development and performance of a 16 channel hybrid fast timing amplifier (FTA), for extracting timing information from silicon strip detectors (SSD), is described. The FTA will be used in a time of flight (TOF) measurement, in which one SSD is used to obtain the ion velocity (A) as well as the energy information of a scattered particle. The TOF information with a thin transmission SSD, acting as ΔE detector (Z) in a detector telescope, will provide a unique detection system for the identification of reaction products in the slowed down beam campaign of low energy branch (LEB) at NUSTAR-FAIR. Such a system will also provide large solid angle coverage with ~ 100% detection efficiency, and adequate segmentation for angular information. A good timing resolution (≤ 100 ps) enables to have shorter flight paths, thus a closely packed 4π array should be feasible. Preamplifiers for energy readout in SSD are easily available. A major constraint with SSDs is the missing high density multichannel preamplifiers which can provide both fast timing as well as energy. Provision of both timing and energy processing, generally makes circuit bulky, with higher power consumption, which may not be suitable in SSD arrays. In case of DSSSD, the problem was overcome by using timing from one side and energy from the other side. A custom designed 16 channel FTA has been developed for DSSSD design W from Micron Semiconductors, UK

Study of 236U/238U ratio at CIRCE using a 16-strip silicon detector with a TOF system

Science.gov (United States)

De Cesare, M.; De Cesare, N.; D'Onofrio, A.; Gialanella, L.; Terrasi, F.

2015-04-01

Accelerator Mass Spectrometry (AMS) is presently the most sensitive technique for the measurement of long-lived actinides, e.g. 236U and xPu isotopes. A new actinide AMS system, based on a 3-MV pelletron tandem accelerator, is operated at the Center for Isotopic Research on Cultural and Environmental Heritage (CIRCE) in Caserta, Italy. In this paper we report on the procedure adopted to increase the 236U abundance sensitivity as low as possible. The energy and position determinations of the 236U ions, using a 16-strip silicon detector have been obtained. A 236U/238U isotopic ratio background level of about 2.9×10-11 was obtained, summing over all the strips, using a Time of Flight-Energy (TOF-E) system with a 16-strip silicon detector (4.9×10-12 just with one strip).

A time-based front-end ASIC for the silicon micro strip sensors of the bar PANDA Micro Vertex Detector

Science.gov (United States)

Di Pietro, V.; Brinkmann, K.-Th.; Riccardi, A.; Ritman, J.; Rivetti, A.; Rolo, M. D.; Stockmanns, T.; Zambanini, A.

2016-03-01

The bar PANDA (Antiproton Annihilation at Darmstadt) experiment foresees many detectors for tracking, particle identification and calorimetry. Among them, the innermost is the MVD (Micro Vertex Detector) responsible for a precise tracking and the reconstruction of secondary vertices. This detector will be built from both hybrid pixel (two inner barrels and six forward disks) and double-sided micro strip (two outer barrels and outer rim of the last two disks) silicon sensors. A time-based approach has been chosen for the readout ASIC of the strip sensors. The PASTA (bar PANDA Strip ASIC) chip aims at high resolution time-stamping and charge information through the Time over Threshold (ToT) technique. It benefits from a Time to Digital Converter (TDC) allowing a time bin width down to 50 ps. The analog front-end was designed to serve both n-type and p-type strips and the performed simulations show remarkable performances in terms of linearity and electronic noise. The TDC consists of an analog interpolator, a digital local controller, and a digital global controller as the common back-end for all of the 64 channels.

Performance of CdZnTe strip detectors as sub-millimeter resolution imaging gamma radiation spectrometers

International Nuclear Information System (INIS)

Mayer, M.; Boykin, D.V.; Drake, A.

1996-01-01

We report γ-ray detection performance measurements and computer simulations of a sub-millimeter pitch CdZnTe strip detector. The detector is a prototype for γ-ray astronomy measurements in the range of 20-200 keV. The prototype is a 1.5 mm thick, 64 x 64 orthogonal stripe CdZnTe detector of 0.375 mm pitch in both dimensions, with approximately one square inch of sensitive area. Using discrete laboratory electronics to process signals from 8 x 8 stripe region of the prototype we measured good spectroscopic uniformity and sub-pitch (∼ 0.2 mm) spatial resolution in both x and y dimensions. We present below measurements of the spatial uniformity, relative timing and pulse height of the anode and cathode signals, and the photon detection efficiency. We also present a technique for determining the location of the event in the third dimension (depth). We simulated the photon interactions and signal generation in the strip detector and the test electronics and we compare these results with the data. The data indicate that cathode signal - as well as the anode signal - arises more strongly from the conduction electrons rather than the holes

CVD diamond detectors for ionizing radiation

Science.gov (United States)

Friedl, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2×4 cm2 have been grown and refined for better charge collection properties, which are measured with a β source or in a testbeam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5×10 15 cm-2 to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics.

Submicron position-sensitive detector

Energy Technology Data Exchange (ETDEWEB)

Pugatch, V M; Rosenfeld, A B; Litovchenko, P G; Barabash, L I; Nemets, O F; Pavlenko, Yu N; Vasiliev, Yu O [Ukrainian Academy of Sciences, Kiev (Ukraine). Inst. for Nuclear Research

1992-08-01

A method has been developed to measure precisely the coordinates of charged particles incident between adjacent strips of a strip detector. The position sensitivity of an inter-strip gap has been studied by means of a pulsed laser beam and irradiation by [alpha]-particles of a [sup 226]Ra-source. The capacitive division of charge generated by the incident particle depends on the position of its track. Its coordinates were determined by two-dimensional amplitude analysis of the charges collected by neighbouring strips. This method of coordinate determination applied to studies of spatial and energy distributions of electromagnetic as well as charged particle beams (including radioactive ion beams) of low intensity could provide the highest level of the precision limited by the track dimensions of charged particles, i.e. percents of a micrometer. (orig.).

Data quality monitoring of the CMS Silicon Strip Tracker detector

International Nuclear Information System (INIS)

Benucci, L.

2010-01-01

The Physics and Data Quality Monitoring (DQM) framework aims at providing a homogeneous monitoring environment across various applications related to data taking at the CMS experiment. In this contribution, the DQM system for the Silicon Strip Tracker will be introduced. The set of elements to assess the status of detector will be mentioned, along with the way to identify problems and trace them to specific tracker elements. Monitoring tools, user interfaces and automated software will be briefly described. The system was used during extensive cosmic data taking of CMS in Autumn 2008, where it demonstrated to have a flexible and robust implementation and has been essential to improve the understanding of the detector. CMS Collaboration believes that this tool is now mature to face the forthcoming data-taking era.

Response of Superheated Droplet Detector (SDD) and Bubble Detector (BD) to interrupted irradiations

Energy Technology Data Exchange (ETDEWEB)

Mondal, Prasanna Kumar, E-mail: prasanna_ind_82@yahoo.com; Sarkar, Rupa, E-mail: sarkar_rupa2003@yahoo.com; Chatterjee, Barun Kumar, E-mail: barun_k_chatterjee@yahoo.com

2017-06-11

Superheated droplet detectors (SDD) and bubble detectors (BD) are suspensions of micron-sized superheated liquid droplets in inert medium. The metastable droplets can vaporise upon interaction with ionising radiation generating visible bubbles. In this work, we investigated the response of SDD and BD to interrupted neutron irradiations. We observed that the droplet vaporisation rates for SDD and BD are different in nature. The unusual increase in droplet vaporisation rate observed when the SDD is exposed to neutrons after few minutes of radiation-off period is absent for BD. - Highlights: • Superheated droplet detectors (SDD) and bubble detectors (BD) are suspensions of superheated liquid droplets in inert medium. • The bubble nucleation in superheated droplets can be induced by ionising radiation. • The droplet vaporisation rate for SDD is non-monotonic when it is irradiated periodically to neutrons. • For BD the droplet vaporisation rate decrease monotonically when it is irradiated periodically to neutrons.

Study of 236U/238U ratio at CIRCE using a 16-strip silicon detector with a TOF system

Directory of Open Access Journals (Sweden)

De Cesare M.

2015-01-01

Full Text Available Accelerator Mass Spectrometry (AMS is presently the most sensitive technique for the measurement of long-lived actinides, e.g. 236U and xPu isotopes. A new actinide AMS system, based on a 3-MV pelletron tandem accelerator, is operated at the Center for Isotopic Research on Cultural and Environmental Heritage (CIRCE in Caserta, Italy. In this paper we report on the procedure adopted to increase the 236U abundance sensitivity as low as possible. The energy and position determinations of the 236U ions, using a 16-strip silicon detector have been obtained. A 236U/238U isotopic ratio background level of about 2.9×10−11 was obtained, summing over all the strips, using a Time of Flight-Energy (TOF-E system with a 16-strip silicon detector (4.9×10−12 just with one strip.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS inner detector

International Nuclear Information System (INIS)

Poley, Luise; Bloch, Ingo; Edwards, Sam

2016-04-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives. Results from electrical tests of first prototype modules constructed using these glues are presented.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS inner detector

Energy Technology Data Exchange (ETDEWEB)

Poley, Luise [DESY, Zeuthen (Germany); Humboldt Univ. Berlin (Germany); Bloch, Ingo [DESY, Zeuthen (Germany); Edwards, Sam [Birmingham Univ. (United Kingdom); and others

2016-04-15

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). This glue has several disadvantages, which motivated the search for an alternative. This paper presents a study concerning the use of six ultra-violet (UV) cure glues and a glue pad for use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, the thermal conduction and shear strength, thermal cycling, radiation hardness, corrosion resistance and shear strength tests. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives. Results from electrical tests of first prototype modules constructed using these glues are presented.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

Science.gov (United States)

Poley, L.; Bloch, I.; Edwards, S.; Friedrich, C.; Gregor, I.-M.; Jones, T.; Lacker, H.; Pyatt, S.; Rehnisch, L.; Sperlich, D.; Wilson, J.

2016-05-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

Alternative glues for the production of ATLAS silicon strip modules for the Phase-II upgrade of the ATLAS Inner Detector

International Nuclear Information System (INIS)

Poley, L.; Bloch, I.; Friedrich, C.; Gregor, I.-M.; Edwards, S.; Pyatt, S.; Wilson, J.; Jones, T.; Lacker, H.; Rehnisch, L.; Sperlich, D.

2016-01-01

The Phase-II upgrade of the ATLAS detector for the High Luminosity Large Hadron Collider (HL-LHC) includes the replacement of the current Inner Detector with an all-silicon tracker consisting of pixel and strip detectors. The current Phase-II detector layout requires the construction of 20,000 strip detector modules consisting of sensor, circuit boards and readout chips, which are connected mechanically using adhesives. The adhesive used initially between readout chips and circuit board is a silver epoxy glue as was used in the current ATLAS SemiConductor Tracker (SCT). However, this glue has several disadvantages, which motivated the search for an alternative. This paper presents a study of six ultra-violet (UV) cure glues and a glue pad for possible use in the assembly of silicon strip detector modules for the ATLAS upgrade. Trials were carried out to determine the ease of use, thermal conduction and shear strength. Samples were thermally cycled, radiation hardness and corrosion resistance were also determined. These investigations led to the exclusion of three UV cure glues as well as the glue pad. Three UV cure glues were found to be possible better alternatives than silver loaded glue. Results from electrical tests of first prototype modules constructed using these glues are presented.

Hadron-therapy beam monitoring: Towards a new generation of ultra-thin p-type silicon strip detectors

International Nuclear Information System (INIS)

Bouterfa, M.; Aouadi, K.; Bertrand, D.; Olbrechts, B.; Delamare, R.; Raskin, J. P.; Gil, E. C.; Flandre, D.

2011-01-01

Hadron-therapy has gained increasing interest for cancer treatment especially within the last decade. System commissioning and quality assurance procedures impose to monitor the particle beam using 2D dose measurements. Nowadays, several monitoring systems exist for hadron-therapy but all show a relatively high influence on the beam properties: indeed, most devices consist of several layers of materials that degrade the beam through scattering and energy losses. For precise treatment purposes, ultra-thin silicon strip detectors are investigated in order to reduce this beam scattering. We assess the beam size increase provoked by the Multiple Coulomb Scattering when passing through Si, to derive a target thickness. Monte-Carlo based simulations show a characteristic scattering opening angle lower than 1 mrad for thicknesses below 20 μm. We then evaluated the fabrication process feasibility. We successfully thinned down silicon wafers to thicknesses lower than 10 μm over areas of several cm 2 . Strip detectors are presently being processed and they will tentatively be thinned down to 20 μm. Moreover, two-dimensional TCAD simulations were carried out to investigate the beam detector performances on p-type Si substrates. Additionally, thick and thin substrates have been compared thanks to electrical simulations. Reducing the pitch between the strips increases breakdown voltage, whereas leakage current is quite insensitive to strips geometrical configuration. The samples are to be characterized as soon as possible in one of the IBA hadron-therapy facilities. For hadron-therapy, this would represent a considerable step forward in terms of treatment precision. (authors)

Development of a novel depth of interaction PET detector using highly multiplexed G-APD cross-strip encoding

Energy Technology Data Exchange (ETDEWEB)

Kolb, A., E-mail: armin.kolb@med.uni-tuebingen.de; Parl, C.; Liu, C. C.; Pichler, B. J. [Werner Siemens Imaging Center, Department of Preclinical Imaging and Radiopharmacy, Eberhard Karls University, 72076 Tübingen (Germany); Mantlik, F. [Werner Siemens Imaging Center, Department of Preclinical Imaging and Radiopharmacy, Eberhard Karls University, 72076 Tübingen, Germany and Department of Empirical Inference, Max Planck Institute for Intelligent Systems, 72076 Tübingen (Germany); Lorenz, E. [Max Planck Institute for Physics, Föhringer Ring 6, 80805 München (Germany); Renker, D. [Department of Physics, Technische Universität München, 85748 Garching (Germany)

2014-08-15

Purpose: The aim of this study was to develop a prototype PET detector module for a combined small animal positron emission tomography and magnetic resonance imaging (PET/MRI) system. The most important factor for small animal imaging applications is the detection sensitivity of the PET camera, which can be optimized by utilizing longer scintillation crystals. At the same time, small animal PET systems must yield a high spatial resolution. The measured object is very close to the PET detector because the bore diameter of a high field animal MR scanner is limited. When used in combination with long scintillation crystals, these small-bore PET systems generate parallax errors that ultimately lead to a decreased spatial resolution. Thus, we developed a depth of interaction (DoI) encoding PET detector module that has a uniform spatial resolution across the whole field of view (FOV), high detection sensitivity, compactness, and insensitivity to magnetic fields. Methods: The approach was based on Geiger mode avalanche photodiode (G-APD) detectors with cross-strip encoding. The number of readout channels was reduced by a factor of 36 for the chosen block elements. Two 12 × 2 G-APD strip arrays (25μm cells) were placed perpendicular on each face of a 12 × 12 lutetium oxyorthosilicate crystal block with a crystal size of 1.55 × 1.55 × 20 mm. The strip arrays were multiplexed into two channels and used to calculate the x, y coordinates for each array and the deposited energy. The DoI was measured in step sizes of 1.8 mm by a collimated {sup 18}F source. The coincident resolved time (CRT) was analyzed at all DoI positions by acquiring the waveform for each event and applying a digital leading edge discriminator. Results: All 144 crystals were well resolved in the crystal flood map. The average full width half maximum (FWHM) energy resolution of the detector was 12.8% ± 1.5% with a FWHM CRT of 1.14 ± 0.02 ns. The average FWHM DoI resolution over 12 crystals was 2.90 �

Search for heavy lepton resonances decaying to a Z boson and a lepton in proton-proton collisions at √(s)=8 TeV with the ATLAS detector and investigations of radiation tolerant silicon-strip detectors for the high-luminosity LHC upgrade of the ATLAS inner detector

Energy Technology Data Exchange (ETDEWEB)

Wiik-Fuchs, Liv

2017-03-09

planar n-in-p and 3D silicon strip sensors, where the electrodes are etched into the silicon substrate. The six sensors in this beam test were irradiated with fluences of up to 3 x 10{sup 15} n{sub eq}cm{sup -2}. Detailed investigations on the collected charge showed that both sensor geometries collect enough charge to equip the silicon microstrip layers at the upgraded Inner Tracker. The beam test measurements also provided the first observation of charge multiplication in 3D detectors, an effect attributed to an avalanche of charges in detector regions with high electric fields. Finally a summary on the installation of a centralised test facility for large scale structures and irradiated modules is presented including a direct comparison of competing design approaches for the Inner Tracker, called stave and supermodule approach.

Search for heavy lepton resonances decaying to a Z boson and a lepton in proton-proton collisions at √(s)=8 TeV with the ATLAS detector and investigations of radiation tolerant silicon-strip detectors for the high-luminosity LHC upgrade of the ATLAS inner detector

International Nuclear Information System (INIS)

Wiik-Fuchs, Liv

2017-01-01

planar n-in-p and 3D silicon strip sensors, where the electrodes are etched into the silicon substrate. The six sensors in this beam test were irradiated with fluences of up to 3 x 10"1"5 n_e_qcm"-"2. Detailed investigations on the collected charge showed that both sensor geometries collect enough charge to equip the silicon microstrip layers at the upgraded Inner Tracker. The beam test measurements also provided the first observation of charge multiplication in 3D detectors, an effect attributed to an avalanche of charges in detector regions with high electric fields. Finally a summary on the installation of a centralised test facility for large scale structures and irradiated modules is presented including a direct comparison of competing design approaches for the Inner Tracker, called stave and supermodule approach.

Study of charge transport in silicon detectors: Non-irradiated and irradiated

International Nuclear Information System (INIS)

Leroy, C.; Roy, P.; Casse, G.; Glaser, M.; Grigoriev, E.; Lemeilleur, F.

1999-01-01

The electrical characteristics of silicon detectors (standard planar float zone and MESA detectors) as a function of the particle fluence can be extracted by the application of a model describing the transport of charge carriers generated in the detectors by ionizing particles. The current pulse response induced by α and β particles in non-irradiated detectors and detectors irradiated up to fluences PHI ∼ 3 · 10 14 particles/cm 2 is reproduced via this model: i) by adding a small n-type region 15 μm deep on the p + side for the detectors at fluences beyond the n to p-type inversion and ii) for the MESA detectors, by considering one additional dead layer of 14 μm (observed experimentally) on each side of the detector, and introducing a second (delayed) component to the current pulse response. For both types of detectors, the model gives mobilities decreasing linearily up to fluences of about 5·10 13 particles/cm 2 and converging, beyond, to saturation values of about 1050 cm 2 /Vs and 450 cm 2 /Vs for electrons and holes, respectively. At a fluence PHI ∼ 10 14 particles/cm 2 (corresponding to about ten years of operation at the CERN-LHC), charge collection deficits of about 14% for β particles, 25% for α particles incident on the front and 35% for α particles incident on the back of the detector are found for both type of detectors

Proposed method of assembly for the BCD silicon strip vertex detector modules

International Nuclear Information System (INIS)

Lindenmeyer, C.

1989-01-01

The BCD Silicon strip Vertex Detector is constructed of 10 identical central region modules and 18 similar forward region modules. This memo describes a method of assembling these modules from individual silicon wafers. Each wafer is fitted with associated front end electronics and cables and has been tested to insure that only good wafers reach the final assembly stage. 5 figs

Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

International Nuclear Information System (INIS)

Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

2007-01-01

Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

Improvement of radiation response characteristic on CdTe detectors using fast neutron irradiation

International Nuclear Information System (INIS)

Miyamaru, Hiroyuki; Takahashi, Akito; Iida, Toshiyuki

1999-01-01

The treatment of fast neutron pre-irradiation was applied to a CdTe radiation detector in order to improve radiation response characteristic. Electron transport property of the detector was changed by the irradiation effect to suppress pulse amplitude fluctuation in risetime. Spectroscopic performance of the pre-irradiated detector was compared with the original. Additionally, the pre-irradiated detector was employed with a detection system using electrical signal processing of risetime discrimination (RTD). Pulse height spectra of 241 Am, 133 Ba, and 137 Cs gamma rays were measured to examine the change of the detector performance. The experimental results indicated that response characteristic for high-energy photons was improved by the pre-irradiation. The combination of the pre-irradiated detector and the RTD processing was found to provide further enhancement of the energy resolution. Application of fast neutron irradiation effect to the CdTe detector was demonstrated. (author)

Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

Energy Technology Data Exchange (ETDEWEB)

Dalla Betta, Gian-Franco, E-mail: gianfranco.dallabetta@unitn.it [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Betancourt, Christopher [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Boscardin, Maurizio; Giacomini, Gabriele [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy); Jakobs, Karl; Kühn, Susanne [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Lecini, Besnik [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Mendicino, Roberto [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Mori, Riccardo; Parzefall, Ulrich [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Povoli, Marco [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Thomas, Maira [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Zorzi, Nicola [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy)

2014-11-21

This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages.

Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

International Nuclear Information System (INIS)

Dalla Betta, Gian-Franco; Betancourt, Christopher; Boscardin, Maurizio; Giacomini, Gabriele; Jakobs, Karl; Kühn, Susanne; Lecini, Besnik; Mendicino, Roberto; Mori, Riccardo; Parzefall, Ulrich; Povoli, Marco; Thomas, Maira; Zorzi, Nicola

2014-01-01

This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages

Monolithic front-end ICs for interpolating cathode pad and strip detectors for GEM

International Nuclear Information System (INIS)

O'Connor, P.

1993-05-01

We are developing CMOS circuits for readout of interpolating cathode strip and pad chambers for the GEM experiment at the SSC. Because these detectors require position resolution of about 1% of the strip pitch, the electronic noise level must be less than 2000 electrons. Several test chips have been fabricated to demonstrate the feasibility of achieving the combination of low noise, speed, and wide dynamic range in CMOS. Results to date show satisfactory noise and linearity performance. Future development will concentrate on radiation-hardening the central tracker ASIC design, optimizing the shaper peaking time and noise contribution, providing more user-configurable output options, and packaging and test issues

Noise characterization of silicon strip detectors-comparison of sensors with and without integrated jfet source-follower.

CERN Document Server

Giacomini, Gabriele

Noise is often the main factor limiting the performance of detector systems. In this work a detailed study of the noise contributions in different types of silicon microstrip sensors is carried on. We investigate three sensors with double-sided readout fabricated by different suppliers for the ALICE experiment at the CERN LHC, in addition to detectors including an integrated JFET Source-Follower as a first signal conditioning stage. The latter have been designed as an attempt at improving the performance when very long strips, obtained by gangling together several sensors, are required. After a description of the strip sensors and of their operation, the “static” characterization measurements performed on them (current and capacitance versus voltage and/or frequency) are illustrated and interpreted. Numerical device simulation has been employed as an aid in interpreting some of the measurement results. The commonly used models for expressing the noise of the detector-amplifier system in terms of its relev...

Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker

OpenAIRE

Poley, Anne-Luise

2018-01-01

This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were tested using three UV cure glues in comparison with the current baseline glue (a non-conductive epoxy).The impact of irradiation on the chemical composition of all adhesives under investigation was studied using three standard methods for chemical analysis: quadrupole...

Prototyping of Silicon Strip Detectors for the Inner Tracker of the ALICE Experiment

Science.gov (United States)

Sokolov, Oleksiy

2006-04-01

The ALICE experiment at CERN will study heavy ion collisions at a center-of-mass energy 5.5˜TeV per nucleon. Particle tracking around the interaction region at radii rrequire about 20 thousand HAL25 front-end readout chips and about 3.5 thousand hybrids each containing 6 HAL25 chips. During the assembly procedure, chips are bonded on a patterned TAB aluminium microcables which connect to all the chip input and output pads, and then the chips are assembled on the hybrids. Bonding failures at the chip or hybrid level may either render the component non-functional or deteriorate its the performance such that it can not be used for the module production. After each bonding operation, the component testing is done to reject the non-functional or poorly performing chips and hybrids. The LabView-controlled test station for this operation has been built at Utrecht University and was successfully used for mass production acceptance tests of chips and hybrids at three production labs. The functionality of the chip registers, bonding quality and analogue functionality of the chips and hybrids are addressed in the test. The test routines were optimized to minimize the testing time to make sure that testing is not a bottleneck of the mass production. For testing of complete modules the laser scanning station with 1060 nm diode laser has been assembled at Utrecht University. The testing method relies of the fact that a response of the detector module to a short collimated laser beam pulse resembles a response to a minimum ionizing particle. A small beam spot size (˜7 μm ) allows to deposit the charge in a narrow region and measure the response of individual detector channels. First several module prototypes have been studied with this setup, the strip gain and charge sharing function have been measured, the later is compared with the model predictions. It was also shown that for a laser beam of a high monochromaticity, interference in the sensor bulk significantly modulates

Apparatus for measuring profile thickness of strip material

International Nuclear Information System (INIS)

Hold, A.C.

1982-01-01

Apparatus for measuring the thickness profile of steel strip comprises a radiation source reciprocally movable in a stepwise fashion (by a belt) across the strip width on one side thereof and a single elongated detector on the other side of the strip aligned with the scanning source. This detector may be a fluorescent scintillator detector or an ionisation chamber. Means are provided for sensing the degree of excitation in the detector in synchronism with the scanning source whereby to provide an output representative of the thickness profile of the strip. (author)

CVD diamond detectors for ionizing radiation

CERN Document Server

Friedl, M; Bauer, C; Berfermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

1999-01-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2*4 cm/sup 2/ have been grown and refined for better charge collection properties, which are measured with a beta source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5*10/sup 15/ cm/sup -2/ to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (16 refs).

CVD diamond detectors for ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Friedl, M. E-mail: markus.friedl@cern.ch; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2x4 cm{sup 2} have been grown and refined for better charge collection properties, which are measured with a {beta} source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5x10{sup 15} cm{sup -2} to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (author)

A time-based front-end ASIC for the silicon micro strip sensors of the P-bar ANDA Micro Vertex Detector

International Nuclear Information System (INIS)

Pietro, V. Di; Brinkmann, K.-Th.; Riccardi, A.; Ritman, J.; Stockmanns, T.; Zambanini, A.; Rivetti, A.; Rolo, M.D.

2016-01-01

The P-bar ANDA (Antiproton Annihilation at Darmstadt) experiment foresees many detectors for tracking, particle identification and calorimetry. Among them, the innermost is the MVD (Micro Vertex Detector) responsible for a precise tracking and the reconstruction of secondary vertices. This detector will be built from both hybrid pixel (two inner barrels and six forward disks) and double-sided micro strip (two outer barrels and outer rim of the last two disks) silicon sensors. A time-based approach has been chosen for the readout ASIC of the strip sensors. The PASTA ( P-bar ANDA Strip ASIC) chip aims at high resolution time-stamping and charge information through the Time over Threshold (ToT) technique. It benefits from a Time to Digital Converter (TDC) allowing a time bin width down to 50 ps. The analog front-end was designed to serve both n-type and p-type strips and the performed simulations show remarkable performances in terms of linearity and electronic noise. The TDC consists of an analog interpolator, a digital local controller, and a digital global controller as the common back-end for all of the 64 channels

High-resolution Compton cameras based on Si/CdTe double-sided strip detectors

International Nuclear Information System (INIS)

Odaka, Hirokazu; Ichinohe, Yuto; Takeda, Shin'ichiro; Fukuyama, Taro; Hagino, Koichi; Saito, Shinya; Sato, Tamotsu; Sato, Goro; Watanabe, Shin; Kokubun, Motohide; Takahashi, Tadayuki; Yamaguchi, Mitsutaka

2012-01-01

We have developed a new Compton camera based on silicon (Si) and cadmium telluride (CdTe) semiconductor double-sided strip detectors (DSDs). The camera consists of a 500-μm-thick Si-DSD and four layers of 750-μm-thick CdTe-DSDs all of which have common electrode configuration segmented into 128 strips on each side with pitches of 250μm. In order to realize high angular resolution and to reduce size of the detector system, a stack of DSDs with short stack pitches of 4 mm is utilized to make the camera. Taking advantage of the excellent energy and position resolutions of the semiconductor devices, the camera achieves high angular resolutions of 4.5° at 356 keV and 3.5° at 662 keV. To obtain such high resolutions together with an acceptable detection efficiency, we demonstrate data reduction methods including energy calibration using Compton scattering continuum and depth sensing in the CdTe-DSD. We also discuss imaging capability of the camera and show simultaneous multi-energy imaging.

Interference coupling mechanisms in Silicon Strip Detectors - CMS tracker "wings" A learned lesson for SLHC

CERN Document Server

Arteche, F; Rivetta, C

2009-01-01

The identification of coupling mechanisms between noise sources and sensitive areas of the front-end electronics (FEE) in the previous CMS tracker sub-system is critical to optimize the design and integration of integrated circuits, sensors and power distribution circuitry for the proposed SLHC Silicon Strip Tracker systems. This paper presents a validated model of the noise sensitivity observed in the Silicon Strip Detector-FEE of the CMS tracker that allows quantifying both the impact of the noise coupling mechanisms and the system immunity against electromagnetic interferences. This model has been validated based on simulations using finite element models and immunity tests conducted on prototypes of the Silicon Tracker End-Caps (TEC) and Outer Barrel (TOB) systems. The results of these studies show important recommendations and criteria to be applied in the design of future detectors to increase the immunity against electromagnetic noise.

Performance of a single photon counting microstrip detector for strip pitches down to 10 μm

International Nuclear Information System (INIS)

Bergamaschi, A.; Broennimann, Ch.; Dinapoli, R.; Eikenberry, E.; Gozzo, F.; Henrich, B.; Kobas, M.; Kraft, P.; Patterson, B.; Schmitt, B.

2008-01-01

The MYTHEN detector is a one-dimensional microstrip detector with single photon counting readout optimized for time resolved powder diffraction experiments at the Swiss Light Source (SLS). The system has been successfully tested for many different synchrotron radiation applications including phase contrast and tomographic imaging, small angle scattering, diffraction and time resolved pump and probe experiments for X-ray energies down to 5 keV and counting rate up to 3 MHz. The frontend electronics is designed in order to be coupled to 50 μm pitch microstrip sensors but some interest in enhancing the spatial resolution is arising for imaging and powder diffraction experiments. A test structure with strip pitches in the range 10-50 μm has been tested and the gain and noise on the readout electronics have been measured for the different strip pitches, observing no large difference down to 25 μm. Moreover, the effect of the charge sharing between neighboring strips on the spatial resolution has been quantified by measuring the Point Spread Function (PSF) of the system for the different pitches

Performance of a single photon counting microstrip detector for strip pitches down to 10 μm

Science.gov (United States)

Bergamaschi, A.; Broennimann, Ch.; Dinapoli, R.; Eikenberry, E.; Gozzo, F.; Henrich, B.; Kobas, M.; Kraft, P.; Patterson, B.; Schmitt, B.

2008-06-01

The MYTHEN detector is a one-dimensional microstrip detector with single photon counting readout optimized for time resolved powder diffraction experiments at the Swiss Light Source (SLS). The system has been successfully tested for many different synchrotron radiation applications including phase contrast and tomographic imaging, small angle scattering, diffraction and time resolved pump and probe experiments for X-ray energies down to 5 keV and counting rate up to 3 MHz. The frontend electronics is designed in order to be coupled to 50 μm pitch microstrip sensors but some interest in enhancing the spatial resolution is arising for imaging and powder diffraction experiments. A test structure with strip pitches in the range 10-50 μm has been tested and the gain and noise on the readout electronics have been measured for the different strip pitches, observing no large difference down to 25 μm. Moreover, the effect of the charge sharing between neighboring strips on the spatial resolution has been quantified by measuring the Point Spread Function (PSF) of the system for the different pitches.

NaI(Tl) scintillator detectors stripping procedure for air kerma measurements of diagnostic X-ray beams

Energy Technology Data Exchange (ETDEWEB)

Oliveira, L.S.R. [Centro Tecnológico do Exército, CTEx (Brazilian Army Technological Center), Av. das Américas n° 28705, 23085-470 Rio de Janeiro (Brazil); Instituto de Radioprotecão e Dosimetria, CNEN/IRD (Institute for Radioprotection and Dosimetry, CNEN/IRD), Av. Salvador Allende s/no, P.O. Box 37750, 22783-127 Barra da Tijuca, Rio de Janeiro (Brazil); Conti, C.C., E-mail: ccconti@ird.gov.br [Instituto de Radioprotecão e Dosimetria, CNEN/IRD (Institute for Radioprotection and Dosimetry, CNEN/IRD), Av. Salvador Allende s/no, P.O. Box 37750, 22783-127 Barra da Tijuca, Rio de Janeiro (Brazil); Amorim, A.S.; Balthar, M.C.V. [Centro Tecnológico do Exército, CTEx (Brazilian Army Technological Center), Av. das Américas n° 28705, 23085-470 Rio de Janeiro (Brazil)

2013-03-21

Air kerma is an essential quantity for the calibration of national standards used in diagnostic radiology and the measurement of operating parameters used in radiation protection. Its measurement within the appropriate limits of accuracy, uncertainty and reproducibility is important for the characterization and control of the radiation field for the dosimetry of the patients submitted to diagnostic radiology and, also, for the assessment of the system which produces radiological images. Only the incident beam must be considered for the calculation of the air kerma. Therefore, for energy spectrum, counts apart the total energy deposition in the detector must be subtracted. It is necessary to establish a procedure to sort out the different contributions to the original spectrum and remove the counts representing scattered photons in the detector’s materials, partial energy deposition due to the interactions in the detector active volume and, also, the escape peaks contributions. The main goal of this work is to present spectrum stripping procedure, using the MCNP Monte Carlo computer code, for NaI(Tl) scintillation detectors to calculate the air kerma due to an X-ray beam usually used in medical radiology. The comparison between the spectrum before stripping procedure against the reference value showed a discrepancy of more than 63%, while the comparison with the same spectrum after the stripping procedure showed a discrepancy of less than 0.2%.

High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

International Nuclear Information System (INIS)

Tian, Y.; Shimazoe, K.; Yan, X.; Ueda, O.; Ishikura, T.; Fujiwara, T.; Uesaka, M.; Ohno, M.; Tomita, H.; Yoshihara, Y.; Takahashi, H.

2016-01-01

A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

High energy X-ray photon counting imaging using linear accelerator and silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Tian, Y., E-mail: cycjty@sophie.q.t.u-tokyo.ac.jp [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Shimazoe, K.; Yan, X. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Ueda, O.; Ishikura, T. [Fuji Electric Co., Ltd., Fuji, Hino, Tokyo 191-8502 (Japan); Fujiwara, T. [National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568 (Japan); Uesaka, M.; Ohno, M. [Nuclear Professional School, the University of Tokyo, 2-22 Shirakata-shirane, Tokai, Ibaraki 319-1188 (Japan); Tomita, H. [Department of Quantum Engineering, Nagoya University, Furo, Chikusa, Nagoya 464-8603 (Japan); Yoshihara, Y. [Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Takahashi, H. [Department of Bioengineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Nuclear Engineering and Management, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-09-11

A photon counting imaging detector system for high energy X-rays is developed for on-site non-destructive testing of thick objects. One-dimensional silicon strip (1 mm pitch) detectors are stacked to form a two-dimensional edge-on module. Each detector is connected to a 48-channel application specific integrated circuit (ASIC). The threshold-triggered events are recorded by a field programmable gate array based counter in each channel. The detector prototype is tested using 950 kV linear accelerator X-rays. The fast CR shaper (300 ns pulse width) of the ASIC makes it possible to deal with the high instant count rate during the 2 μs beam pulse. The preliminary imaging results of several metal and concrete samples are demonstrated.

Study on effects of gamma-ray irradiation on TlBr semiconductor detectors

International Nuclear Information System (INIS)

Matsumura, Motohiro; Watanabe, Kenichi; Yamazaki, Atsushi; Uritani, Akira; Kimura, Norihisa; Nagano, Nobumichi; Hitomi, Keitaro

2016-01-01

Radiation hardness of thallium bromide (TlBr) semiconductor detectors to 60 Co gamma-ray irradiation was evaluated. The energy spectra and μτ products of electrons were measured to evaluate the irradiation effects. No significant degradation of spectroscopic performance of the TlBr detector for 137 Cs gamma-rays was observed up to 45 kGy irradiation. Although the μτ products of electrons in the TlBr detector slightly decreased, position of the photo-peak was stable without significant degradation after the gamma-ray irradiation. We confirmed that the TlBr semiconductor detector has a high tolerance for gamma-ray irradiation at least up to 45 kGy. (author)

P-Type Silicon Strip Sensors for the Future CMS Tracker

CERN Document Server

The Tracker Group of the CMS Collaboration

2016-01-01

The upgrade to the High-Luminosity LHC (HL-LHC) is expected to increase the LHC design luminosity by an order of magnitude. This will require silicon tracking detectors with a significantly higher radiation hardness. The CMS Tracker Collaboration has conducted an irradiation and measurement campaign to identify suitable silicon sensor materials and strip designs for the future outer tracker at CMS. Based on these results, the collaboration has chosen to use n-in-p type strip and macro-pixel sensors and focus further investigations on the optimization of that sensor type. This paper describes the main measurement results and conclusions that motivated this decision.

Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

International Nuclear Information System (INIS)

Casagrande, L.; Barnett, B.M.; Bartalina, P.

1999-01-01

In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼4 x 10 14 p/cm 2 , no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

Characterisation of strip silicon detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

CERN Document Server

INSPIRE-00407830; Blue, Andrew; Bates, Richard; Bloch, Ingo; Diez, Sergio; Fernandez-Tejero, Javier; Fleta, Celeste; Gallop, Bruce; Greenall, Ashley; Gregor, Ingrid-Maria; Hara, Kazuhiko; Ikegami, Yoichi; Lacasta, Carlos; Lohwasser, Kristin; Maneuski, Dzmitry; Nagorski, Sebastian; Pape, Ian; Phillips, Peter W.; Sperlich, Dennis; Sawhney, Kawal; Soldevila, Urmila; Ullan, Miguel; Unno, Yoshinobu; Warren, Matt

2016-07-29

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity, totalling 1x10^35 cm^-2 s^-1 after 10 years of operation. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1, requiring the tracking detectors to withstand hadron equivalences to over 1x10^16 1 MeV neutrons per cm^2. With the addition of increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 micron FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 micron thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 micron thick full size radial (Endcap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout...

The SVX3D integrated circuit for dead-timeless silicon strip readout

Energy Technology Data Exchange (ETDEWEB)

Garcia-Sciveres, M. E-mail: mgs@lbl.gov; Milgrome, O.; Zimmerman, T.; Volobouev, I.; Ely, R.P.; Connolly, A.; Fish, D.; Affolder, T.; Sill, A

1999-10-01

The revision D of the SVX3 readout IC has been fabricated in the Honeywell radiation-hard 0.8 {mu}m bulk CMOS process, for instrumenting 712,704 silicon strips in the upgrade to the Collider Detector at Fermilab. This final revision incorporates new features and changes to the original architecture that were added to meet the goal of dead-timeless operation. This paper describes the features central to dead-timeless operation, and presents test data for un-irradiated and irradiated SVX3D chips. (author)

Pulse laser irradiation into superconducting MgB2 detector

International Nuclear Information System (INIS)

Fujiwara, Daisuke; Miki, Shigehito; Satoh, Kazuo; Yotsuya, Tsutomu; Shimakage, Hisashi; Wang, Zhen; Okayasu, Satoru; Katagiri, Masaki; Machida, Masahiko; Kato, Masaru; Ishida, Takekazu

2005-01-01

We performed 20-ps pulse laser irradiation experiments on a MgB 2 neutron detector to know a thermal-relaxation process for designing a MgB 2 neutron detector. The membrane-type structured MgB 2 device was fabricated to minimize the heat capacity of sensing part of a detector as well as to enhance its sensitivity. We successfully observed a thermal-relaxation signal resulting from pulse laser irradiation by developing a detection circuit. The response time was faster than 1 μs, meaning that the detector would be capable of counting neutrons at a rate of more than 10 6 events per second

Development of a 3D CZT detector prototype for Laue Lens telescope

DEFF Research Database (Denmark)

Caroli, Ezio; Auricchio, Natalia; Del Sordo, Stefano

2010-01-01

We report on the development of a 3D position sensitive prototype suitable as focal plane detector for Laue lens telescope. The basic sensitive unit is a drift strip detector based on a CZT crystal, (~19×8 mm2 area, 2.4 mm thick), irradiated transversally to the electric field direction. The anode...

The ALICE forward multiplicity detector

DEFF Research Database (Denmark)

Holm Christensen, Christian; Gulbrandsen, Kristjan; Sogaard, Carsten

2007-01-01

The ALICE Forward Multiplicity Detector (FMD) is a silicon strip detector with 51,200 strips arranged in 5 rings, covering the range $-3.4......The ALICE Forward Multiplicity Detector (FMD) is a silicon strip detector with 51,200 strips arranged in 5 rings, covering the range $-3.4...

Gamma Large Area Silicon Telescope (GLAST): Applying silicon strip detector technology to the detection of gamma rays in space

International Nuclear Information System (INIS)

Atwood, W.B.

1993-06-01

The recent discoveries and excitement generated by space satellite experiment EGRET (presently operating on Compton Gamma Ray Observatory -- CGRO) have prompted an investigation into modern detector technologies for the next generation space based gamma ray telescopes. The GLAST proposal is based on silicon strip detectors as the open-quotes technology of choiceclose quotes for space application: no consumables, no gas volume, robust (versus fragile), long lived, and self triggerable. The GLAST detector basically has two components: a tracking module preceding a calorimeter. The tracking module has planes of crossed strip (x,y) 300 μm pitch silicon detectors coupled to a thin radiator to measure the coordinates of converted electron-positron pairs. The gap between the layers (∼5 cm) provides a lever arm for track fitting resulting in an angular resolution of <0.1 degree at high energy. The status of this R ampersand D effort is discussed including details on triggering the instrument, the organization of the detector electronics and readout, and work on computer simulations to model this instrument

Operation of heavily irradiated silicon detectors in non-depletion mode

International Nuclear Information System (INIS)

Verbitskaya, E.; Eremin, V.; Ilyashenko, I.; Li, Z.; Haerkoenen, J.; Tuovinen, E.; Luukka, P.

2006-01-01

The non-depletion detector operation mode has generally been disregarded as an option in high-energy physics experiments. In this paper, the non-depletion operation is examined by detailed analysis of the electric field distribution and the current pulse response of heavily irradiated silicon (Si) detectors. The previously reported model of double junction in heavily irradiated Si detector is further developed and a simulation of the current pulse response has been performed. It is shown that detectors can operate in a non-depletion mode due to the fact that the value of the electric field in a non-depleted region is high enough for efficient carrier drift. This electric field originates from the current flow through the detector and a consequent drop of the potential across high-resistivity bulk of a non-depleted region. It is anticipated that the electric field in a non-depleted region, which is still electrically neutral, increases with fluence that improves the non-depleted detector operation. Consideration of the electric field in a non-depleted region allows the explanation of the recorded double-peak current pulse shape of heavily irradiated Si detectors and definition of the requirements for the detector operational conditions. Detailed reconstruction of the electric field distribution gives new information on radiation effects in Si detectors

Study of the physical processes involved in the operating mode of the micro-strips gas detector Micromegas

International Nuclear Information System (INIS)

Barouch, G.

2001-04-01

Micromegas is a micro-strip gaseous detector invented in 1996. It consists of two volumes of gas separated by a micro-mesh. The first volume of gas, 3 mm thick, is used to liberate ionization electrons from the incident charged particle. In the second volume, only 100 μm thick, an avalanche phenomenon amplifies the electrons produced in the first volume. Strips printed on an insulating substrate collect the electrons from the avalanche. The geometrical configuration of Micromegas showed many advantages. The short anode-cathode distance combined with a high granularity provide high rate capabilities due to a fast collection of ions produced during the avalanche development. Moreover, the possibility to localize the avalanche with strips printed about every hundreds of micrometers allows to measure the position of the incident particle with a good resolution. In this work, experimental tests of Micromegas are presented along with detailed Monte Carlo simulations used to understand and optimize the detector's performances. The prototypes were tested several times at the PS accelerator at CERN. The analysis of the date showed a stable and efficient behavior of Micromegas combined with an excellent space resolution. In fact, spatial resolutions of less than 15 μm were obtained. In parallel with the in-beam tests, several simulations have been developed in order to gain a better understanding of the detector's response. (author)

Charge transport in non-irradiated and irradiated silicon detectors

International Nuclear Information System (INIS)

Leroy, C.; Roy, P.; Casse, G.L.; Glaser, M.; Grigoriev, E.; Lemeilleur, F.

1999-01-01

A model describing the transport of the charge carriers generated in n-type silicon detectors by ionizing particles is presented. In order to reproduce the experimental current pulse responses induced by α and β particles in non-irradiated and irradiated detectors up to fluences (PHI) much beyond the n to p-type inversion, an n-type region 15 μm deep is introduced on the p + side of the diode. This model also gives mobilities which decrease linearly up to fluences of around 5x10 13 particles/cm 2 and beyond, converging to saturation values of about 1000 and 450 cm 2 /V s for electrons and holes, respectively. The charge carrier lifetime degradation with increased fluence, due to trapping, is responsible for a predicted charge collection deficit for β particles and for α particles which is found to agree with direct CCE measurements. (author)

Front-side biasing of n-in-p silicon strip detectors

CERN Document Server

Baselga Bacardit, Marta; Dierlamm, Alexander Hermann; Dragicevic, Marko Gerhart; Konig, Axel; Pree, Elias; Metzler, Marius

2018-01-01

Front-side biasing is an alternative method to bias a silicon sensor. Instead of directly applying high voltage to the back-side, one can exploit the conductive properties of the edge region to bias a detector exclusively via top-side connections. This option can be beneficial for the detector design and might help to facilitate the assembly process of modules. The effective bias voltage is affected by the resistance of the edge region and the sensor current. The measurements of n-in-p sensors performed to qualify this concept have shown that the voltage drop emerging from this resistance is negligible before irradiation. After irradiation, however, the resistivity of the edge region increases with fluence and saturates in the region of 10$^{7}\\,\\Omega$ at a fluence of 1$\\,\\cdot\\,10^{15}\\,$n$_{\\textrm{eq}}$cm$^{-2}$. The measurements are complemented by TCAD simulations and interpretations of the observed effects.

Performance studies under high irradiation and ageing properties of resistive bulk Micromegas chambers at the new CERN Gamma Irradiation Facility

International Nuclear Information System (INIS)

Sidiropoulou, O.; Gonzalez, B. Alvarez; Bianco, M.; Farina, E.M.; Iengo, P.; Longo, L.; Pfeiffer, D.; Wotschack, J.

2017-01-01

Resistive bulk Micromegas chambers, produced at CERN, have been installed at the new CERN Gamma Irradiation Facility (GIF++) in order to study the effects of ageing and to evaluate the detector behaviour under high irradiation. The chambers have an active area of 10×10 cm 2 , strip pitch of 400 μm and an amplification gap of 128 μm. We present the detector performance as a function of the background rate of up to 20 MHz/cm 2 . - Highlights: • Small-size resistive bulk Micromegas detectors have been exposed to the new GIF++. • 9 months irradiation to γ up to 20 Mhz/cm 2 . 0.09 C/cm 2 collected integrated charge. • Νo degradation of the detector performance was observed. • Muon tracks successfully reconstructed up to 68 kHz/cm 2 gamma background. • Higher background rates will be studied in the coming months.

LabVIEW-based control and acquisition system for the dosimetric characterization of a silicon strip detector.

Science.gov (United States)

Ovejero, M C; Pérez Vega-Leal, A; Gallardo, M I; Espino, J M; Selva, A; Cortés-Giraldo, M A; Arráns, R

2017-02-01

The aim of this work is to present a new data acquisition, control, and analysis software system written in LabVIEW. This system has been designed to obtain the dosimetry of a silicon strip detector in polyethylene. It allows the full automation of the experiments and data analysis required for the dosimetric characterization of silicon detectors. It becomes a useful tool that can be applied in the daily routine check of a beam accelerator.

Evaluation of Irradiated Barrel Detector Modules for the Upgrade of the CMS Pixel Detector

CERN Document Server

Sibille, Jennifer Ann

2013-01-01

Prototype detector modules comprising sensors and the new readout chips were assembled and irradiated with protons at the CERN PS, and readout chips without sensors have been irradiated with protons at the Karls...

Development of a multi-channel front-end electronics module based on ASIC for silicon strip array detectors

International Nuclear Information System (INIS)

Zhao Xingwen; Yan Duo; Su Hong; Qian Yi; Kong Jie; Zhang Xueheng; Li Zhankui; Li Haixia

2014-01-01

The silicon strip array detector is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). Using the ASICs, the front-end electronics module has been developed for the silicon strip array detectors and can implement measurement of energy of 96 channels. The performance of the front-end electronics module has been tested. The energy linearity of the front-end electronics module is better than 0.3% for the dynamic range of 0.1∼0.7 V. The energy resolution is better than 0.45%. The maximum channel crosstalk is better than 10%. The channel consistency is better than 1.3%. After continuously working for 24 h at room temperature, the maximum drift of the zero-peak is 1.48 mV. (authors)

Development of AC-coupled, poly-silicon biased, p-on-n silicon strip detectors in India for HEP experiments

Science.gov (United States)

Jain, Geetika; Dalal, Ranjeet; Bhardwaj, Ashutosh; Ranjan, Kirti; Dierlamm, Alexander; Hartmann, Frank; Eber, Robert; Demarteau, Marcel

2018-02-01

P-on-n silicon strip sensors having multiple guard-ring structures have been developed for High Energy Physics applications. The study constitutes the optimization of the sensor design, and fabrication of AC-coupled, poly-silicon biased sensors of strip width of 30 μm and strip pitch of 55 μm. The silicon wafers used for the fabrication are of 4 inch n-type, having an average resistivity of 2-5 k Ω cm, with a thickness of 300 μm. The electrical characterization of these detectors comprises of: (a) global measurements of total leakage current, and backplane capacitance; (b) strip and voltage scans of strip leakage current, poly-silicon resistance, interstrip capacitance, interstrip resistance, coupling capacitance, and dielectric current; and (c) charge collection measurements using ALiBaVa setup. The results of the same are reported here.

Aging tests of MSGC detectors

CERN Document Server

Boulogne, I; Defontaines, F; Grard, Fernand

2003-01-01

MSGC aging effects have been systematically studied to determine optimal performance in the design framework of the CMS forward tracker. Tests were conducted on prototypes under various operating conditions (glass substrates, Cr or Au strips, Ar-DME or Ne-DME gas mixtures, gas set-up purity, and others), using an X-ray generator for irradiation. The different steps of our investigations are summarized. They demonstrate the complexity of the aging phenomenon as well as the difficulty of getting stable behavior of MSGC detectors under high rates of irradiation.

ASTRO-H CdTe detectors proton irradiation at PIF

International Nuclear Information System (INIS)

Limousin, O.; Renaud, D.; Horeau, B.; Dubos, S.; Laurent, P.; Lebrun, F.; Chipaux, R.; Boatella Polo, C.; Marcinkowski, R.; Kawaharada, M.; Watanabe, S.; Ohta, M.; Sato, G.; Takahashi, T.

2015-01-01

Asbstract: The French Atomic Energy Commission (CEA), with the support of the European Space Agency (ESA), is partner of the Soft Gamma-Ray Detector (SGD) and the Hard X-ray Imager (HXI) onboard the 6th Japanese X-ray scientific satellite ASTRO-H (JAXA) initiated by the Institute of Space and Astronautical Science (ISAS). Both scientific instruments, one hosting a series of Compton Gamma Cameras and the other being a focal plane of a grazing incidence mirror telescope in the hard X-ray domain, are equipped with Cadmium Telluride based detectors. ASTRO-H will be operated in a Low Earth Orbit with a 31° inclination at ~550 km altitude, thus passing daily through the South Atlantic Anomaly radiation belt, a specially harsh environment where the detectors are suffering the effect of the interaction with trapped high energy protons. As CdTe detector performance might be affected by the irradiation, we investigate the effect of the accumulated proton fluence on their spectral response. To do so, we have characterized and irradiated representative samples of SGD and HXI detector under different conditions. The detectors in question, from ACRORAD, are single-pixels having a size of 2 mm by 2 mm and 750 µm thick. The Schottky contact is either made of an Indium or Aluminum for SGD and HXI respectively. We ran the irradiation test campaign at the Proton Irradiation Facility (PIF) at PSI, and ESA approved equipment to evaluate the radiation hardness of flight hardware. We simulated the proton flux expected on the sensors over the entire mission, and secondary neutrons flux due to primary proton interactions into the surrounding BGO active shielding. We eventually characterized the detector response evolution, emphasizing each detector spectral response as well as its stability by studying the so-called Polarization effect. The latter is provoking a spectral response degradation against time as a charge accumulation process occurs in Schottky type CdTe sensors. In this paper

Spectral Irradiance Measurements Based on Detector

International Nuclear Information System (INIS)

Lima, M S; Menegotto, T; Duarte, I; Da Silva, T Ferreira; Alves, L C; Alvarenga, A D; Almeida, G B; Couceiro, I B; Teixeira, R N

2015-01-01

This paper presents the preliminary results of the realization of absolute spectral irradiance scale at INMETRO in the ultraviolet, visible and infrared regions using filter radiometers as secondary standards. In the construction of these instruments are used, at least, apertures, interference filters and a trap detector. In the assembly of the trap detectors it was necessary to characterize several photocells in spatial uniformity and shunt resistance. All components were calibrated and these results were analyzed to mount the filter radiometer

Silicon microstrip detectors in 3D technology for the sLHC

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne; Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris; Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2009-08-01

The projected luminosity upgrade of the large hadron collider (LHC), the sLHC, will constitute a challenging radiation environment for tracking detectors. Massive improvements in radiation hardness are required with respect to the LHC. In the layout for the new ATLAS tracker, silicon strip detectors (SSDs) with short strips cover the region from 28 to 60 cm distance to the beam. These SSDs will be exposed to fluences up to 10{sup 15}N{sub eq}/cm{sup 2}, hence radiation resistance is the major concern. It is advantageous to fuse the superior radiation hardness of the 3D design originally conceived for pixel-style applications with the benefits of the well-known planar technology for strip detectors. This is achieved by ganging rows of 3D columns together to form strips. Several prototype sLHC detector modules using 3D SSD with short strips, processed on p-type silicon, and LHC-speed front-end electronics from the present ATLAS semi-conductor tracker (SCT) were built. The modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency (CCE), a Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particles (MIPs), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the performance of these 3D modules, and draws conclusions about options for using 3D strip sensors as tracking detectors at the sLHC.

Silicon microstrip detectors in 3D technology for the sLHC

International Nuclear Information System (INIS)

Parzefall, Ulrich; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Pahn, Gregor; Parkes, Chris; Pennicard, David; Ronchin, Sabina; Zoboli, Andrea; Zorzi, Nicola

2009-01-01

The projected luminosity upgrade of the large hadron collider (LHC), the sLHC, will constitute a challenging radiation environment for tracking detectors. Massive improvements in radiation hardness are required with respect to the LHC. In the layout for the new ATLAS tracker, silicon strip detectors (SSDs) with short strips cover the region from 28 to 60 cm distance to the beam. These SSDs will be exposed to fluences up to 10 15 N eq /cm 2 , hence radiation resistance is the major concern. It is advantageous to fuse the superior radiation hardness of the 3D design originally conceived for pixel-style applications with the benefits of the well-known planar technology for strip detectors. This is achieved by ganging rows of 3D columns together to form strips. Several prototype sLHC detector modules using 3D SSD with short strips, processed on p-type silicon, and LHC-speed front-end electronics from the present ATLAS semi-conductor tracker (SCT) were built. The modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency (CCE), a Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particles (MIPs), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the performance of these 3D modules, and draws conclusions about options for using 3D strip sensors as tracking detectors at the sLHC.

Neutron irradiation test of depleted CMOS pixel detector prototypes

International Nuclear Information System (INIS)

Mandić, I.; Cindro, V.; Gorišek, A.; Hiti, B.; Kramberger, G.; Mikuž, M.; Zavrtanik, M.; Hemperek, T.; Daas, M.; Hügging, F.; Krüger, H.; Pohl, D.-L.; Wermes, N.; Gonella, L.

2017-01-01

Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 kΩ cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1 · 10 13 n/cm 2 and 5 · 10 13 n/cm 2 and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1 · 10 15 n/cm 2 is more than 50 μm at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments.

Technical Design Report for the ATLAS Inner Tracker Strip Detector

CERN Document Server

Collaboration, ATLAS

2017-01-01

This is the first of two Technical Design Report documents that describe the upgrade of the central tracking system for the ATLAS experiment for the operation at the High Luminosity LHC (HL-LHC) starting in the middle of 2026. At this time the LHC will have been upgraded to reach a peak instantaneous luminosity of 7.5x10^34 cm^[-2]s^[-1], which corresponds to approximately 200 inelastic proton-proton collisions per beam crossing. The new Inner Tracker (ITk) will be operational for more than ten years, during which ATLAS aims to accumulate a total data set of 3,000 fb^[-1]. Meeting these requirements presents a unique challenge for the design of an all-silicon tracking system that consists of a pixel detector at small radius close to the beam line and a large-area strip tracking detector surrounding it. This document presents in detail the requirements of the new tracker, its layout and expected performance including the results of several benchmark physics studies at the highest numbers of collisions per beam...

The ATLAS ITk strip detector. Status of R&D

Energy Technology Data Exchange (ETDEWEB)

García Argos, Carlos, E-mail: carlos.garcia.argos@cern.ch

2017-02-11

While the LHC at CERN is ramping up luminosity after the discovery of the Higgs Boson in the ATLAS and CMS experiments in 2012, upgrades to the LHC and experiments are planned. The major upgrade is foreseen for 2024, with a roughly tenfold increase in luminosity, resulting in corresponding increases in particle rates and radiation doses. In ATLAS the entire Inner Detector will be replaced for Phase-II running with an all-silicon system. This paper concentrates on the strip part. Its layout foresees low-mass and modular yet highly integrated double-sided structures for the barrel and forward region. The design features conceptually simple modules made from electronic hybrids glued directly onto the silicon. Modules will then be assembled on both sides of large carbon-core structures with integrated cooling and electrical services.

Design and development of a vertex reconstruction for the CMS (Compact Muon Solenoid) data. Study of gaseous and silicon micro-strips detectors (MSGC); Conception d'un algorithme de reconstruction de vertex pour les donnees de CMS. Etude de detecteurs gazeux (MSGC) et silicium a micropistes

Energy Technology Data Exchange (ETDEWEB)

Moreau, St

2002-12-01

The work presented in this thesis has contributed to the development of the Compact Muon Solenoid detector (CMS) that will be installed at the future Large Hadron Collider (LHC) which will start running in summer 2007. This report is organised in three parts: the study of gaseous detectors and silicon micro-strips detectors, and a development of a software for the reconstruction and analysis of CMS data in the framework of ORCA. First, the micro-strips gaseous detectors (MSGC) study was on the ultimate critical irradiation test before their substitution in the CMS tracker. This test showed a really small number of lost anodes and a stable signal to noise ratio. This test proved that the described MSGC fulfill all the requirements to be integrated in the CMS tracker. The following contribution described a study of silicon micro-strips detectors and its electronics exposed to a 40 MHz bunched LHC like beam. These tests indicated a good behaviour of the data acquisition and control system. The signal to noise ratio, the bunch crossing identification and the cluster finding efficiency had also be analysed. The last study concern the design and the development of an ORCA algorithm dedicates to secondary vertex reconstruction. This iterative algorithm aims to be use for b tagging. This part analyse also primary vertex reconstruction in events without and with pile up. (author)

Development and Evaluation of Test Stations for the Quality Assurance of the Silicon Micro-Strip Detector Modules for the CMS Experiment

CERN Document Server

Pöttgens, Michael

2007-01-01

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m2, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control o...

First results of the front-end ASIC for the strip detector of the PANDA MVD

Science.gov (United States)

Quagli, T.; Brinkmann, K.-T.; Calvo, D.; Di Pietro, V.; Lai, A.; Riccardi, A.; Ritman, J.; Rivetti, A.; Rolo, M. D.; Stockmanns, T.; Wheadon, R.; Zambanini, A.

2017-03-01

PANDA is a key experiment of the future FAIR facility and the Micro Vertex Detector (MVD) is the innermost part of its tracking system. PASTA (PAnda STrip ASIC) is the readout chip for the strip part of the MVD. The chip is designed to provide high resolution timestamp and charge information with the Time over Threshold (ToT) technique. Its architecture is based on Time to Digital Converters with analog interpolators, with a time bin width of 50 ps. The chip implements Single Event Upset (SEU) protection techniques for its digital parts. A first full-size prototype with 64 channels was produced in a commercial 110 nm CMOS technology and the first characterizations of the prototype were performed.

SiliPET: An ultra-high resolution design of a small animal PET scanner based on stacks of double-sided silicon strip detector

International Nuclear Information System (INIS)

Di Domenico, Giovanni; Zavattini, Guido; Cesca, Nicola; Auricchio, Natalia; Andritschke, Robert; Schopper, Florian; Kanbach, Gottfried

2007-01-01

We investigated with Monte Carlo simulations, using the EGSNrcMP code, the capabilities of a small animal PET scanner based on four stacks of double-sided silicon strip detectors. Each stack consists of 40 silicon detectors with dimension of 60x60x1 mm 3 and 128 orthogonal strips on each side. Two coordinates of the interaction are given by the strips, whereas the third coordinate is given by the detector number in the stack. The stacks are arranged to form a box of 5x5x6 cm 3 with minor sides opened; the box represents the minimal FOV of the scanner. The performance parameters of the SiliPET scanner have been estimated giving a (positron range limited) spatial resolution of 0.52 mm FWHM, and an absolute sensitivity of 5.1% at the center of system. Preliminary results of a proof of principle measurement done with the MEGA advanced Compton imager using a ∼1 mm diameter 22 Na source, showed a focal ray tracing FWHM of 1 mm

Projection of the annealing behavior of irradiated Si sensors in the LHC environment

CERN Document Server

Chatterji, S; Bhardwaj, N; Chauhan, S S; Choudhary, B C; Gupta, P; Jha, M; Kumar, A; Naimuddin, M; Ranjan, K; Shivpuri, R K; Srivastava-Ajay, K

2004-01-01

The study of the radiation tolerance and subsequent annealing effects on p+-n-n+ silicon micro strip detectors has been performed as a part of R&D program for the preshower detector in the CMS experiment. CMS silicon strip sensors were irradiated with 24 GeV protons at CERN proton synchrotron (PS) to a total fluence of 3*10/sup 14/ p/cm/sup 2 /. Sensors were stored in freezer after irradiation and I-V and C-V measurements were carried out. Variation in full depletion voltage and leakage current have been studied as a function of annealing time. The breakdown performance of the device actually improves after irradiation due to the beneficial effect of type-inversion. The breakdown voltage increases further with annealing time. However, the leakage current increases tremendously just after irradiation. As the sensors are annealed, there is a drop in leakage current. The rate of annealing is observed to be temperature dependent. Hence in terms of leakage current, it seems that room temperature annealing is b...

Modules and Front-End Electronics Developments for the ATLAS ITk Strips Upgrade

CERN Document Server

Garcia-Argos, Carlos; The ATLAS collaboration

2017-01-01

The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High Luminosity LHC, scheduled for 2024. The existing Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) with a pixel detector surrounded by a strip detector. The ITk strip detector consists of a four layer barrel and a forward region composed of six discs on each side of the barrel. The basic unit of the detector is the silicon-strip module, consisting of a sensor and one or more hybrid circuits that hold the read-out electronics. The geometries of the barrel and end-cap modules take into account the regions that they have to cover. In the central region, the detectors are rectangular with straight strips, whereas on the forward region the modules require wedge shaped sensors with varying strip length and pitch. The current prototyping phase has resulted in the ITk Strip Detector Technical Design Report (TDR), which kicks-off the pre-production readiness phase at the involved institutes. ...

Modules and Front-End Electronics Developments for the ATLAS ITk Strips Upgrade

CERN Document Server

Garcia-Argos, Carlos; The ATLAS collaboration

2017-01-01

The ATLAS experiment is currently preparing for an upgrade of the tracking system in the course of the High Luminosity LHC, scheduled for 2024. The existing Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) with a pixel detector surrounded by a strip detector. The ITk strip detector consists of a four layer barrel and a forward region composed of six discs on each side of the barrel. The basic unit of the detector is the silicon-strip module, consisting of a sensor and one or more hybrid circuits that hold the read-out electronics. The geometries of the barrel and end-cap modules take into account the regions that they have to cover. In the central region, the detectors are rectangular with straight strips, whereas in the forward region the modules require wedge shaped sensors with varying strip length and pitch. The current prototyping phase has resulted in the ITk Strip Detector Technical Design Report (TDR), which kicks-off the pre-production readiness phase at the involved institutes. ...

MUST, a set of strip detectors for studying radioactive beams induced reactions; MUST, un ensemble de detecteurs a pistes pour l`etude des reactions induites par faisceaux radioactifs

Energy Technology Data Exchange (ETDEWEB)

Blumenfeld, Y.; Barbier, A.; Beaumel, D.; Charlet, D.; Clavelin, J.F.; Douet, R.; Engrand, M.; Lebon, S.; Lelong, P.; Lesage, A.; Leven, V.; Lhenry, I.; Marechal, F.; Petizon, L.; Pouthas, J.; Richard, A.; Rougier, D.; Soulet, C.; Suomijaervi, T.; Volkov, P.; Voltolini, G. [Paris-11 Univ., 91 - Orsay (France). Inst. de Physique Nucleaire; Auger, F.; Ottini, S.; Alamanos, N. [CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Astrophysique, de la Physique des Particules, de la Physique Nucleaire et de l`Instrumentation Associee; Sauvestre, J.E.; Bonnereau, B.; Champion, L.; Delbourgo-Salvador, P.; Ethvignot, T.; Szmigiel, M. [CEA Centre d`Etudes de Bruyeres-le-Chatel, 91 (France)

1996-12-31

This report states the specificity of light particles elastic scattering, and the need of detecting recoil protons to improve angular resolution. Then the development of a specific MUST strip detector is detailed: 60 strips detectors with Si O sub 2 dielectric, that yield 500 ps time resolution, and Si (Li) detectors following next. A versatile data acquisition system has been developed too, with CAMAC interface to suit to any experimental plant. (D.L.). 27 refs.

MCNPX calculations for electron irradiated semiconductor detectors

International Nuclear Information System (INIS)

Sedlackova, K.; Necas, V.; Sagatova, A.; Zatko, B.

2014-01-01

This study aimed to treat some practical problems of (not only) semiconductor material irradiation by high energy electron beam using MCNPX simulation code. The relation between the absorbed dose and the fluency was found and the energy distribution of electron flux density was simulated on the top and back side of 270 μm thick GaAs, SiC and Si detectors. Furthermore, the dose depth profiles were calculated for GaAs, SiC and Si materials irradiated by 4 and 5 MeV electron beams. For the GaAs detector, a very good agreement with the experiment was shown. To match the absolute values of the absorbed dose with experimentally obtained values, the electron source emissivity has to be determined in relation to the electron beam setting parameters. (authors)

The honeycomb strip chamber: A two coordinate and high precision muon detector

International Nuclear Information System (INIS)

Tolsma, H.P.T.

1996-01-01

This thesis describes the construction and performance of the Honeycomb Strip Chamber (HSC). The HSC offers several advantages with respect to classical drift chambers and drift tubes. The main features of the HSC are: -The detector offers the possibility of simultaneous readout of two orthogonal coordinates with approximately the same precision. - The HSC technology is optimised for mass production. This means that the design is modular (monolayers) and automisation of most of the production steps is possible (folding and welding machines). - The technology is flexible. The cell diameter can easily be changed from a few millimetres to at least 20 mm by changing the parameters in the computer programme of the folding machine. The number of monolayers per station can be chosen freely to the demands of the experiment. -The honeycomb structure gives the detector stiffness and makes it self supporting. This makes the technology a very transparent one in terms of radiation length which is important to prevent multiple scattering of high energetic muons. - The dimensions of the detector are defined by high precision templates. Those templates constrain for example the overall tolerance on the wire positions to 20 μm rms. Reproduction of the high precision assembly of the detector is thus guaranteed. (orig.)

The honeycomb strip chamber: A two coordinate and high precision muon detector

Energy Technology Data Exchange (ETDEWEB)

Tolsma, H P.T.

1996-04-19

This thesis describes the construction and performance of the Honeycomb Strip Chamber (HSC). The HSC offers several advantages with respect to classical drift chambers and drift tubes. The main features of the HSC are: -The detector offers the possibility of simultaneous readout of two orthogonal coordinates with approximately the same precision. - The HSC technology is optimised for mass production. This means that the design is modular (monolayers) and automisation of most of the production steps is possible (folding and welding machines). - The technology is flexible. The cell diameter can easily be changed from a few millimetres to at least 20 mm by changing the parameters in the computer programme of the folding machine. The number of monolayers per station can be chosen freely to the demands of the experiment. -The honeycomb structure gives the detector stiffness and makes it self supporting. This makes the technology a very transparent one in terms of radiation length which is important to prevent multiple scattering of high energetic muons. - The dimensions of the detector are defined by high precision templates. Those templates constrain for example the overall tolerance on the wire positions to 20 {mu}m rms. Reproduction of the high precision assembly of the detector is thus guaranteed. (orig.).

Radiation studies on resistive bulk-micromegas chambers at the CERN Gamma Irradiation Facility

CERN Document Server

Alvarez Gonzalez, Barbara; Camerlingo, Maria Teresa; Farina, Edoardo; Iengo, Paolo; Longo, Luigi; Samarati, Jerome; Sidiropoulou, Ourania; Wotschack, Joerg

2018-01-01

With the growing diffusion of resistive Micromegas detectors in HEP experiments the study of long-term aging behaviour is becoming more and more relevant. Two resistive bulk-Micromegas detectors were installed in May 2015 at the CERN Gamma Irradiation Facility and exposed to an intense gamma irradiation with the aim to study the detector behavior under high irradiation and the long-term aging. The detectors have an active area of 10 × 10 cm 2 , readout strip pitch of 400 μ m , amplification gap of 128 μ m and drift gap of 5 mm. The desired accumulated charge of more than 0.2 C/cm 2 has been reached for both chambers, equivalent to 10 years of HL-LHC operation. The efficiency, amplification, and resolution of the Micromegas after this long-term irradiation period is compared with the performance of a non irradiated detector. In addition, the latest results of the measured particle rate as a function of the amplification voltage is presented and compared with those obtained in 2015.

Charge collection in Si detectors irradiated in situ at superfluid helium temperature

Science.gov (United States)

Verbitskaya, Elena; Eremin, Vladimir; Zabrodskii, Andrei; Dehning, Bernd; Kurfürst, Christoph; Sapinski, Mariusz; Bartosik, Marcin R.; Egorov, Nicolai; Härkönen, Jaakko

2015-10-01

Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of the LHC beam loss monitoring system. The detectors would be installed in immediate proximity of the superconducting coils of the triplet magnets. We present here the results of the in situ irradiation test for silicon detectors using 23 GeV protons while keeping the detectors at a temperature of 1.9 K. Red laser (630 nm) Transient Current Technique and DC current measurements were used to study the pulse response and collected charge for silicon detectors irradiated to a maximum radiation fluence of 1×1016 p/cm2. The dependence between collected charge and irradiation fluence was parameterized using the Hecht equation and assumption of a uniform electric field distribution. The collected charge was found to degrade with particle fluence for both bias polarities. We observed that the main factor responsible for this degradation was related to trapping of holes on the donor-type radiation-induced defects. In contrast to expectations, along with formation of donors, acceptor-type defects (electron traps) are introduced into the silicon bulk. This suggests that the current models describing charge collection in irradiated silicon detectors require an extension for taking into account trapping at low temperatures with a contribution of shallow levels. New in situ irradiation tests are needed and planned now to extend statistics of the results and gain a deeper insight into the physics of low temperature detector operation in harsh radiation environment.

T-CAD analysis of electric fields in n-in-p silicon strip detectors in dependence on the p-stop pattern and doping concentration

CERN Document Server

Printz, Martin

2015-01-01

However, n-in-p detectors necessarily need an isolation layer of the n+ strips due to an accumula- tion layer of electrons caused by positive charge in the SiO$_2$ at the sensor surface. An additional implantation of acceptors like boron between the n+ strips cuts the co...

A Silicon Strip Detector for the Phase II High Luminosity Upgrade of the ATLAS Detector at the Large Hadron Collider

CERN Document Server

INSPIRE-00425747; McMahon, Stephen J

2015-01-01

ATLAS is a particle physics experiment at the Large Hadron Collider (LHC) that detects proton-proton collisions at a centre of mass energy of 14 TeV. The Semiconductor Tracker is part of the Inner Detector, implemented using silicon microstrip detectors with binary read-out, providing momentum measurement of charged particles with excellent resolution. The operation of the LHC and the ATLAS experiment started in 2010, with ten years of operation expected until major upgrades are needed in the accelerator and the experiments. The ATLAS tracker will need to be completely replaced due to the radiation damage and occupancy of some detector elements and the data links at high luminosities. These upgrades after the first ten years of operation are named the Phase-II Upgrade and involve a re-design of the LHC, resulting in the High Luminosity Large Hadron Collider (HL-LHC). This thesis presents the work carried out in the testing of the ATLAS Phase-II Upgrade electronic systems in the future strips tracker a...

Charge collection in Si detectors irradiated in situ at superfluid helium temperature

Energy Technology Data Exchange (ETDEWEB)

Verbitskaya, Elena, E-mail: elena.verbitskaya@cern.ch [Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg 194021 (Russian Federation); Eremin, Vladimir; Zabrodskii, Andrei [Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg 194021 (Russian Federation); Dehning, Bernd; Kurfürst, Christoph; Sapinski, Mariusz; Bartosik, Marcin R. [CERN, CH-1211, Geneva 23 (Switzerland); Egorov, Nicolai [Research Institute of Material Science and Technology, 4 Passage 4806, Moscow, Zelenograd 124460 (Russian Federation); Härkönen, Jaakko [Helsinki Institute of Physics, P.O.Box 64 (Gustaf Hallströmin katu 2) FI-00014 University of Helsinki (Finland)

2015-10-01

Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of the LHC beam loss monitoring system. The detectors would be installed in immediate proximity of the superconducting coils of the triplet magnets. We present here the results of the in situ irradiation test for silicon detectors using 23 GeV protons while keeping the detectors at a temperature of 1.9 K. Red laser (630 nm) Transient Current Technique and DC current measurements were used to study the pulse response and collected charge for silicon detectors irradiated to a maximum radiation fluence of 1×10{sup 16} p/cm{sup 2}. The dependence between collected charge and irradiation fluence was parameterized using the Hecht equation and assumption of a uniform electric field distribution. The collected charge was found to degrade with particle fluence for both bias polarities. We observed that the main factor responsible for this degradation was related to trapping of holes on the donor-type radiation-induced defects. In contrast to expectations, along with formation of donors, acceptor-type defects (electron traps) are introduced into the silicon bulk. This suggests that the current models describing charge collection in irradiated silicon detectors require an extension for taking into account trapping at low temperatures with a contribution of shallow levels. New in situ irradiation tests are needed and planned now to extend statistics of the results and gain a deeper insight into the physics of low temperature detector operation in harsh radiation environment. - Highlights: • Si detectors irradiated in situ at 1.9 K by 23 GeV protons are further studied. • Trapping parameters are derived from the fits of collected charge vs. fluence data. • Acceptor-type defects are likely to be induced along with donor-type ones. • Trapping of holes has a dominating effect on the collected charge degradation. • New tests are planned to gain deeper insight

Design and characterization of integrated front-end transistors in a micro-strip detector technology

International Nuclear Information System (INIS)

Simi, G.; Angelini, C.; Batignani, G.; Bettarini, S.; Bondioli, M.; Boscardin, M.; Bosisio, L.; Dalla Betta, G.-F.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Manghisoni, M.; Morganti, M.; U. Pignatel, G.; Ratti, L.; Re, V.; Rizzo, G.; Speziali, V.; Zorzi, N.

2002-01-01

We present the developments in a research program aimed at the realization of silicon micro-strip detectors with front-end electronics integrated in a high resistivity substrate to be used in high-energy physics, space and medical/industrial imaging applications. We report on the fabrication process developed at IRST (Trento, Italy), the characterization of the basic wafer parameters and measurements of the relevant working characteristics of the integrated transistors and related test structures

Volumetric CT with sparse detector arrays (and application to Si-strip photon counters).

Science.gov (United States)

Sisniega, A; Zbijewski, W; Stayman, J W; Xu, J; Taguchi, K; Fredenberg, E; Lundqvist, Mats; Siewerdsen, J H

2016-01-07

Novel x-ray medical imaging sensors, such as photon counting detectors (PCDs) and large area CCD and CMOS cameras can involve irregular and/or sparse sampling of the detector plane. Application of such detectors to CT involves undersampling that is markedly different from the commonly considered case of sparse angular sampling. This work investigates volumetric sampling in CT systems incorporating sparsely sampled detectors with axial and helical scan orbits and evaluates performance of model-based image reconstruction (MBIR) with spatially varying regularization in mitigating artifacts due to sparse detector sampling. Volumetric metrics of sampling density and uniformity were introduced. Penalized-likelihood MBIR with a spatially varying penalty that homogenized resolution by accounting for variations in local sampling density (i.e. detector gaps) was evaluated. The proposed methodology was tested in simulations and on an imaging bench based on a Si-strip PCD (total area 5 cm  ×  25 cm) consisting of an arrangement of line sensors separated by gaps of up to 2.5 mm. The bench was equipped with translation/rotation stages allowing a variety of scanning trajectories, ranging from a simple axial acquisition to helical scans with variable pitch. Statistical (spherical clutter) and anthropomorphic (hand) phantoms were considered. Image quality was compared to that obtained with a conventional uniform penalty in terms of structural similarity index (SSIM), image uniformity, spatial resolution, contrast, and noise. Scan trajectories with intermediate helical width (~10 mm longitudinal distance per 360° rotation) demonstrated optimal tradeoff between the average sampling density and the homogeneity of sampling throughout the volume. For a scan trajectory with 10.8 mm helical width, the spatially varying penalty resulted in significant visual reduction of sampling artifacts, confirmed by a 10% reduction in minimum SSIM (from 0.88 to 0.8) and a 40

Beam loss studies on silicon strip detector modules for the CMS experiment

CERN Document Server

Fahrer, Manuel

2006-01-01

The large beam energy of the LHC demands for a save beam abort system. Nevertheless, failures cannot be excluded with last assurance and are predicted to occur once per year. As the CMS experiment is placed in the neighboured LHC octant, it is affected by such events. The effect of an unsynchronized beam abort on the silicon strip modules of the CMS tracking detector has been investigated in this thesis by performing one accelerator and two lab experiments. The dynamical behaviour of operational parameters of modules and components has been recorded during simulated beam loss events to be able to disentangle the reasons of possible damages. The first study with high intensive proton bunches at the CERN PS ensured the robustness of the module design against beam losses. A further lab experiment with pulsed IR LEDs clarified the physical and electrical processes during such events. The silicon strip sensors on a module are protected against beam losses by a part of the module design that originally has not been...

Development of carbon fiber staves for the strip part of the PANDA micro vertex detector

Energy Technology Data Exchange (ETDEWEB)

Quagli, Tommaso; Brinkmann, Kai-Thomas [II. Physikalisches Institut, Justus-Liebig Universitaet Giessen (Germany); Fracassi, Vincenzo; Grunwald, Dirk; Rosenthal, Eberhard [ZEA-1, Forschungszentrum Juelich GmbH, Juelich (Germany); Collaboration: PANDA-Collaboration

2015-07-01

PANDA is a key experiment of the future FAIR facility, under construction in Darmstadt, Germany. It will study the collisions between an antiproton beam and a fixed proton or nuclear target. The Micro Vertex Detector (MVD) is the innermost detector of the apparatus and is composed of four concentric barrels and six forward disks, instrumented with silicon hybrid pixel detectors and double-sided silicon microstrip detectors; its main task is the identification of primary and secondary vertices. The central requirements include high spatial and time resolution, trigger-less readout with high rate capability, good radiation tolerance and low material budget. Because of the compact layout of the system, its integration poses significant challenges. The detectors in the strip barrels will be supported by a composite structure of carbon fiber and carbon foam; a water-based cooling system embedded in the mechanical supports will be used to remove the excess heat from the readout electronics. In this contribution the design of the barrel stave and the ongoing development of some hardware components related to its integration will be presented.

The ATLAS inner detector semiconductor tracker (Si and GaAs strips): review of the 1995 beam tests at the CERN SPS H8 beamline

International Nuclear Information System (INIS)

Moorhead, G.F.

1995-01-01

This talk will consist of a brief review of the ATLAS Inner Detector (ID) Semiconductor Tracker (SCT) strip detector (both silicon and gallium arsenide) beam tests conducted at the ATLAS test beam facility at the CERN SPS H8 beamline. It will include a brief overview of the H8 facilities, the experimental layout of the SCT/Strip apparatus, the data acquisition system, some of the online software tools and the high precision silicon hodoscope and timing modules used. A very brief indication of some of the main varieties of detector systems tested and the measurements performed will be given. Throughout some emphasis will be placed on the contributions and-interests of members of the Melbourne group. (author)

A programmable electronic Microplex Driver Unit for readout of silicon strip detectors

International Nuclear Information System (INIS)

Bairstow, R.

1990-08-01

The unit provides the necessary signals to drive arrays of Microplex devices used to readout silicon strip Vertex detectors as used in DELPHI and OPAL at CERN. The unit has a CAMAC interface allowing operation of the unit by computer in a Remote-control mode. The computer can control all the essential parameters of the drive signals, together with the operational characteristics of the system. Alternatively, the unit can be used in a stand-alone Local-control mode. In this case the front panel controls and displays enable the user to set up the unit. (author)

micro strip gas chamber

CERN Multimedia

1998-01-01

About 16 000 Micro Strip Gas Chambers like this one will be used in the CMS tracking detector. They will measure the tracks of charged particles to a hundredth of a millimetre precision in the region near the collision point where the density of particles is very high. Each chamber is filled with a gas mixture of argon and dimethyl ether. Charged particles passing through ionise the gas, knocking out electrons which are collected on the aluminium strips visible under the microscope. Such detectors are being used in radiography. They give higher resolution imaging and reduce the required dose of radiation.

Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam

Science.gov (United States)

Bates, R.; Blue, A.; Christophersen, M.; Eklund, L.; Ely, S.; Fadeyev, V.; Gimenez, E.; Kachkanov, V.; Kalliopuska, J.; Macchiolo, A.; Maneuski, D.; Phlips, B. F.; Sadrozinski, H. F.-W.; Stewart, G.; Tartoni, N.; Zain, R. M.

2013-01-01

Reduced edge or ``edgeless'' detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

UV-irradiation effects on polyester nuclear track detector

International Nuclear Information System (INIS)

Agarwal, Chhavi; Kalsi, P.C.

2010-01-01

The effects of UV irradiation (λ=254 nm) on polyester nuclear track detector have been investigated employing bulk-etch technique, UV-visible spectrophotometry and infra-red spectrometry (FTIR). The activation energy values for bulk-etching were found to decrease with the UV-irradiation time indicating the scission of the polymer. Not much shift in the absorption edge due to UV irradiation was seen in the UV-visible spectra. FTIR studies also indicate the scission of the chemical bonds, thereby further validating the bulk-etch rate results.

The effect of charge collection recovery in silicon p-n junction detectors irradiated by different particles

International Nuclear Information System (INIS)

Verbitskaya, E.; Abreu, M.; Anbinderis, P.; Anbinderis, T.; D'Ambrosio, N.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, L.; Chen, W.; Cindro, V.; Dezillie, B.; Dierlamm, A.; Eremin, V.; Gaubas, E.; Gorbatenko, V.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Haerkoenen, J.; Ilyashenko, I.; Janos, S.; Jungermann, L.; Kalesinskas, V.; Kapturauskas, J.; Laiho, R.; Li, Z.; Mandic, I.; De Masi, Rita; Menichelli, D.; Mikuz, M.; Militaru, O.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Perea Solano, B.; Piotrzkowski, K.; Pirollo, S.; Pretzl, K.; Rato Mendes, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Tuominen, E.; Vaitkus, J.; Da Via, C.; Wobst, E.; Zavrtanik, M.

2003-01-01

The recovery of the charge collection efficiency (CCE) at low temperatures, the so-called 'Lazarus effect', was studied in Si detectors irradiated by fast reactor neutrons, by protons of medium and high energy, by pions and by gamma-rays. The experimental results show that the Lazarus effect is observed: (a) after all types of irradiation; (b) before and after space charge sign inversion; (c) only in detectors that are biased at voltages resulting in partial depletion at room temperature. The experimental temperature dependence of the CCE for proton-irradiated detectors shows non-monotonic behaviour with a maximum at a temperature defined as the CCE recovery temperature. The model of the effect for proton-irradiated detectors agrees well with that developed earlier for detectors irradiated by neutrons. The same midgap acceptor-type and donor-type levels are responsible for the Lazarus effect in detectors irradiated by neutrons and by protons. A new, abnormal 'zigzag'-shaped temperature dependence of the CCE was observed for detectors irradiated by all particles (neutrons, protons and pions) and by an ultra-high dose of γ-rays, when operating at low bias voltages. This effect is explained in the framework of the double-peak electric field distribution model for heavily irradiated detectors. The redistribution of the space charge region depth between the depleted regions adjacent to p + and n + contacts is responsible for the 'zigzag'- shaped curves. It is shown that the CCE recovery temperature increases with reverse bias in all detectors, regardless of the type of radiation

A silicon photo-multiplier signal readout using strip-line and waveform sampling for Positron Emission Tomography

Science.gov (United States)

Kim, H.; Chen, C.-T.; Eclov, N.; Ronzhin, A.; Murat, P.; Ramberg, E.; Los, S.; Kao, C.-M.

2016-09-01

A strip-line and waveform sampling based readout is a signal multiplexing method that can efficiently reduce the readout channels while fully exploiting the fast time characteristics of photo-detectors such as the SiPM. We have applied this readout method for SiPM-based time-of-flight (TOF) positron emission tomography (PET) detectors. We have prototyped strip-line boards in which 8 SiPMs (pitch 5.2 mm) are connected by using a single strip-line, and the signals appearing at the ends of the strip-line are acquired by using the DRS4 waveform sampler at a nominal sampling frequency of 1-5 GS/s. Experimental tests using laser and LYSO scintillator are carried out to assess the performance of the strip-line board. Each SiPM position, which is inferred from the arrival time difference of the two signals at the ends of the strip-line, is well identified with 2.6 mm FWHM resolution when the SiPMs are coupled to LYSO crystals and irradiated by a 22Na source. The average energy and coincidence time resolution corresponding to 511 keV photons are measured to be ∼32% and ∼510 ps FWHM, respectively, at a 5.0 GS/s DRS4 sampling rate. The results show that the sampling rate can be lowered to 1.5 GS/s without performance degradation. These encouraging initial test results indicate that the strip-line and waveform sampling readout method is applicable for SiPM-based TOF PET development.

Studies of adhesives and metal contacts on silicon strip sensors for the ATLAS Inner Tracker

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00407830; Moenig, Klaus

2018-04-04

This thesis presents studies investigating the use of adhesives on the active area of silicon strip sensors for the construction of silicon strip detector modules for the ATLAS Phase-II Upgrade. 60 ATLAS07 miniature sensors were tested using three UV cure glues in comparison with the current baseline glue (a non-conductive epoxy). The impact of irradiation on the chemical composition of all adhesives under investigation was studied using three standard methods for chemical analysis: quadrupole time-of-flight mass spectroscopy, gel permeability chromatography and gas chromatography combined with mass spectrometry (GC-MS). GC-MS analyses of glue sample extracts before and after irradiation showed molecule cross-linking and broken chemical bonds to different extents and allowed to quantify the radiation hardness of the adhesives under investigation. Probe station measurements were used to investigate electrical characteristics of sensors partially covered with adhesives in comparison with sensors without adhesiv...

Photosensitive Strip RETHGEM

CERN Document Server

Peskov, Vladimir; Nappi, E.; Oliveira, R.; Paic, G.; Pietropaolo, F.; Picchi, P.

2008-01-01

An innovative photosensitive gaseous detector, consisting of a GEM like amplification structure with double layered electrodes (instead of commonly used metallic ones) coated with a CsI reflective photocathode, is described. In one of our latest designs, the inner electrode consists of a metallic grid and the outer one is made of resistive strips; the latter are manufactured by a screen printing technology on the top of the metallic strips grid The inner metallic grid is used for 2D position measurements whereas the resistive layer provides an efficient spark protected operation at high gains - close to the breakdown limit. Detectors with active areas of 10cm x10cm and 10cm x20cm were tested under various conditions including the operation in photosensitive gas mixtures containing ethylferrocene or TMAE vapors. The new technique could have many applications requiring robust and reliable large area detectors for UV visualization, as for example, in Cherenkov imaging devices.

Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons

International Nuclear Information System (INIS)

Eremin, V.; Verbitskaya, E.; Sidorov, A.; Fretwurst, E.; Lindstrom, G.

1996-03-01

Investigation of the I-V stabilization phenomena in neutron irradiated silicon detectors has been carried out using scanning transient current technique (STCT) on non-irradiated PP + -p-n + detectors. The PP + -p-n + detectors were used to simulate the PP + -n-n + detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I- V stabilization have been identified

Performance studies under high irradiation of resistive bulk-micromegas chambers at the CERN Gamma Irradiation Facility

CERN Document Server

Sidiropoulou, Ourania; Bortfeldt, J; Farina, E; Iengo, P; Longo, L; Sidiropoulou, O; Wotschack, J

2017-01-01

Radiation studies on several resistive bulk-Micromegas chambers produced at CERN will be viewed in this document. Two resistive bulk-Micromegas chambers have been installed at the CERN Gamma Irradiation Facility (GIF++) exposed to an intense gamma irradiation with the aim of evaluating the detector behaviour under high irradiation and carrying out a long-term age- ing study. The chambers under study have an active area of 10 x 10 cm 2 , a strip pitch of 400 m m , an ampli- fication gap of 128 m m , and a drift gap of 5 mm. The results on the detector performance as a function of the photon flux up to 44 MHz/cm 2 will be shown as well as the ageing properties as function of the integrated charge and the current intensity and its stability with time. In addition, the results of the efficiency measurements before, during, and after the irradiation will also be presented as a function of the amplification voltage at which the chambers are operated.

High rate behavior and discharge limits in micro-pattern detectors

CERN Document Server

Bressan, A; Pagano, P; Ropelewski, Leszek; Sauli, Fabio; Biagi, S F; Buzulutskov, A F; Gruwé, M; De Lentdecker, G; Mörmann, D; Sharma, A

1999-01-01

We present and discuss a set of systematic measurements, carried out with gaseous proportional micro-pattern detectors, in order to assess their maximum gain when irradiated with high-rate soft X-rays and heavily ionizing alpha particles. The inventory of detectors tested includes: micro-strip micromegas, micro-dot, gas electron multiplier, CAT (compteur à trous), trench (or groove), micro-CAT (or WELL) detectors, as well as systems with two elements of gaseous amplification in cascade. We confirm the general trend of all single-stage detectors to follow Raether's criterion, i.e. a spontaneous transition from avalanche to streamer, followed by a discharge, when the avalanche size reaches a value of a few 10 7 ; a noticeable exception is the micro-dot counter holding more than 10 8. In multiple structures, where the gain under irradiation is increased by at least one order of magnitude; we speculate this to be a consequence of a voltage dependence of Raether's limit, larger for low operating potentials. Our c...

Developing a fast simulator for irradiated silicon detectors

CERN Document Server

Diez Gonzalez-Pardo, Alvaro

2015-01-01

Simulation software for irradiated silicon detectors has been developed on the basis of an already existing C++ simulation software called TRACS[1]. This software has been already proven useful in understanding non-irradiated silicon diodes and microstrips. In addition a wide variety of user-focus features has been implemented to improve on TRACS flexibility. Such features include an interface to allow any program to leverage TRACS functionalities, a configuration file and improved documentation.

Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

International Nuclear Information System (INIS)

Poettgens, M.

2007-01-01

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m 2 , the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the corresponding

Development and evaluation of test stations for the quality assurance of the silicon micro-strip detector modules for the CMS experiment

Energy Technology Data Exchange (ETDEWEB)

Poettgens, M.

2007-11-22

CMS (Compact Muon Solenoid) is one of four large-scale detectors which will be operated at the LHC (Large Hadron Collider) at the European Laboratory for Particle Physics (CERN). For the search for new physics the reconstruction of the collision products and their properties is essential. In the innermost part of the CMS detector the traces of ionizing particles are measured utilizing a silicon tracker. A large fraction of this detector is equipped with silicon micro-strip modules which provide a precise space resolution in 1-dimension. A module consists of a sensor for detection of particles, the corresponding read-out electronics (hybrid) and a mechanical support structure. Since the 15,148 modules, which will be installed in the silicon micro-strip detector, have a total sensitive surface area of about 198 m{sup 2}, the inner tracker of CMS is the largest silicon tracking detector, which has ever been built. While the sensors and hybrids are produced in industry, the construction of the modules and the control of the quality is done by the members of the 21 participating institutes. Since the access to the silicon micro-strip tracker will be very limited after the installation in the CMS detector the installed modules must be of high quality. For this reason the modules are thoroughly tested and the test results are uploaded to a central database. By the development of a read-out system and the corresponding software the III. Physikalisches Institut made an important contribution for the electrical and functional quality control of hybrids and modules. The read-out system provides all features for the operation and test of hybrids and modules and stands out due to high reliability and simple handling. Because a very user-friedly and highly automated software it became the official test tool and was integrated in various test stands. The test stands, in which the read-out system is integrated in, are described and the tests which are implemented in the

Commissioning of the scatter component of a Compton camera consisting of a stack of Si strip detectors

Energy Technology Data Exchange (ETDEWEB)

Liprandi, S.; Marinsek, T.; Bortfeldt, J.; Lang, C.; Lutter, R.; Dedes, G.; Parodi, K.; Thirolf, P.G. [LMU Munich, Garching (Germany); Aldawood, S. [LMU Munich, Garching (Germany); King Saud University, Riyadh (Saudi Arabia); Maier, L.; Gernhaeuser, R. [TU Munich, Garching (Germany); Kolff, H. van der [LMU Munich, Garching (Germany); TU Delft (Netherlands); Castelhano, I. [LMU Munich, Garching (Germany); University of Lisbon, Lisbon (Portugal); Schaart, D.R. [TU Delft (Netherlands)

2015-07-01

At LMU Munich in Garching a Compton camera is presently being developed aiming at the range verification of proton (or ion) beams for hadron therapy via imaging of prompt γ rays from nuclear reactions in the tissue. The poster presentation focuses on the characterization of the scatter component of the Compton camera, consisting of a stack of six double-sided Si strip detectors (50 x 50 mm{sup 2}, 0.5 mm thick, 128 strips/side). The overall 1536 electronics channels are processed by a readout system based on the GASSIPLEX ASIC chip, feeding into a VME-based data acquisition system. The status of the offline and online characterization studies is presented.

Performance of silicon pad detectors after mixed irradiations with neutrons and fast charged hadrons

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G. [Jozef Stefan Institute, Department of Physics, University of Ljubljana, Jamova 39, SI-1000 Ljubljana (Slovenia)], E-mail: Gregor.Kramberger@ijs.si; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M. [Jozef Stefan Institute, Department of Physics, University of Ljubljana, Jamova 39, SI-1000 Ljubljana (Slovenia)

2009-10-11

A large set of silicon pad detectors produced on MCz and FZ wafer of p- and n-type was irradiated in two steps, first by fast charged hadrons followed by reactor neutrons. In this way the irradiations resemble the real irradiation fields at LHC. After irradiations controlled annealing started in steps during which the evolution of full depletion voltage, leakage current and charge collection efficiency was monitored. The damage introduced by different irradiation particles was found to be additive. The most striking consequence of that is a decrease of the full depletion voltage for n-type MCz detectors after additional neutron irradiation. This confirms that effective donors introduced by charged hadron irradiation are compensated by acceptors from neutron irradiation.

Performance of silicon pad detectors after mixed irradiations with neutrons and fast charged hadrons

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2009-01-01

A large set of silicon pad detectors produced on MCz and FZ wafer of p- and n-type was irradiated in two steps, first by fast charged hadrons followed by reactor neutrons. In this way the irradiations resemble the real irradiation fields at LHC. After irradiations controlled annealing started in steps during which the evolution of full depletion voltage, leakage current and charge collection efficiency was monitored. The damage introduced by different irradiation particles was found to be additive. The most striking consequence of that is a decrease of the full depletion voltage for n-type MCz detectors after additional neutron irradiation. This confirms that effective donors introduced by charged hadron irradiation are compensated by acceptors from neutron irradiation.

Quantitative measurements of oxidative stress in mouse skin induced by X-ray irradiation

International Nuclear Information System (INIS)

Chi, Cuiping; Tanaka, Ryoko; Okuda, Yohei; Ikota, Nobuo; Ozawa, Toshihiko; Anzai, Kazunori; Yamamoto, Haruhiko; Urano, Shiro

2005-01-01

To find efficient methods to evaluate oxidative stress in mouse skin caused by X-ray irradiation, several markers and methodologies were examined. Hairless mice were irradiated with 50 Gy X-rays and skin homogenates or skin strips were prepared. Lipid peroxidation was measured using the skin homogenate as the level of thiobarbituric acid reactive substances. The level of lipid peroxidation increased with time after irradiation and was twice that of the control at 78 h. Electron spin resonance (ESR) spectra of skin strips showed a clear signal for the ascorbyl radical, which increased with time after irradiation in a manner similar to that of lipid peroxidation. To measure levels of glutathione (GSH) and its oxidized forms (GSSG) simultaneously, two high performance liquid chromatography (HPLC) methods, sample derivatization with 1-fluoro-2,4-dinitrobenzene and detection with a UV detector (method A) and no derivatization and detection with an electrochemical detector (method B), were compared and the latter was found to be better. No significant change was observed within 24 h after irradiation in the levels of GSH and GSSG measured by method B. The GSH/GSSG ratio may be a less sensitive parameter for the evaluation of acute oxidative stress caused by X-ray irradiation in the skin. Monitoring the ascorbyl radical seems to be a good way to evaluate oxidative stress in skin in vivo. (author)

Radiation damage of pixelated photon detector by neutron irradiation

Energy Technology Data Exchange (ETDEWEB)

Nakamura, Isamu [KEK, 1-1 Oho Tsukuba 305-0801 (Japan)], E-mail: isamu.nakamura@kek.jp

2009-10-21

Radiation Damage of Pixelated Photon Detector by neutron irradiation is reported. MPPC, one of PPD or Geiger-mode APD, developed by Hamamatsu Photonics, is planned to be used in many high energy physics experiments. In such experiments radiation damage is a serious issue. A series of neutron irradiation tests is performed at the Reactor YAYOI of the University of Tokyo. MPPCs were irradiated at the reactor up to 10{sup 12}neutron/cm{sup 2}. In this paper, the effect of neutron irradiation on the basic characteristics of PPD including gain, noise rate, photon detection efficiency is presented.

Low material budget floating strip Micromegas for ion transmission radiography

Energy Technology Data Exchange (ETDEWEB)

Bortfeldt, J., E-mail: jonathan.bortfeldt@cern.ch [LMU Munich, LS Schaile, Am Coulombwall 1, D-85748 Garching (Germany); Biebel, O.; Flierl, B.; Hertenberger, R.; Klitzner, F.; Lösel, Ph. [LMU Munich, LS Schaile, Am Coulombwall 1, D-85748 Garching (Germany); Magallanes, L. [LMU Munich, LS Parodi, Am Coulombwall 1, D-85748 Garching (Germany); University Hospital Heidelberg, Im Neuenheimer Feld 672, D-69120 Heidelberg (Germany); Müller, R. [LMU Munich, LS Schaile, Am Coulombwall 1, D-85748 Garching (Germany); Parodi, K. [LMU Munich, LS Parodi, Am Coulombwall 1, D-85748 Garching (Germany); Heidelberg Ion-Beam Therapy Center, Im Neuenheimer Feld 450, D-69120 Heidelberg (Germany); Schlüter, T. [LMU Munich, Excellence Cluster Universe, Boltzmannstr. 2, D-85748 Garching (Germany); Voss, B. [GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstr. 1, D-64291 Darmstadt (Germany); Zibell, A. [JMU Würzburg, Sanderring 2, D-97070 Würzburg (Germany)

2017-02-11

Floating strip Micromegas are high-accuracy and discharge insensitive gaseous detectors, able to track single particles at fluxes of 7 MHz/cm{sup 2} with 100 μm resolution. We developed low-material-budget detectors with one-dimensional strip readout, suitable for tracking at highest particle rates as encountered in medical ion transmission radiography or inner tracker applications. Recently we additionally developed Kapton-based floating strip Micromegas with two-dimensional strip readout, featuring an overall thickness of 0.011 X{sub 0}. These detectors were tested in high-rate proton and carbon-ion beams at the tandem accelerator in Garching and the Heidelberg Ion-Beam Therapy Center, operated with an optimized Ne:CF{sub 4} gas mixture. By coupling the Micromegas detectors to a new scintillator based range detector, ion transmission radiographies of PMMA and tissue-equivalent phantoms were acquired. The range detector with 18 layers is read out via wavelength shifting fibers, coupled to a multi-anode photomultiplier. We present the performance of the Micromegas detectors with respect to timing and single plane track reconstruction using the μTPC method. We discuss the range resolution of the scintillator range telescope and present the image reconstruction capabilities of the combined system.

Fast CMOS binary front-end for silicon strip detectors at LHC experiments

CERN Document Server

Kaplon, Jan

2004-01-01

We present the design and the test results of a front-end circuit developed in a 0.25 mu m CMOS technology. The aim of this work is to study the performance of a deep submicron process in applications for fast binary front-end for silicon strip detectors. The channel comprises a fast transimpedance preamplifier working with an active feedback loop, two stages of the amplifier-integrator circuits providing 22 ns peaking time and two-stage differential discriminator. Particular effort has been made to minimize the current and the power consumption of the preamplifier, while keeping the required noise and timing performance. For a detector capacitance of 20 pF noise below 1500 e/sup -/ ENC has been achieved for 300 mu A bias current in the input transistor, which is comparable with levels achieved in the past for a front-end using bipolar input transistor. The total supply current of the front-end is 600 mu A and the power dissipation is 1.5 mW per channel. The offset spread of the comparator is below 3 mV rms.

Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

International Nuclear Information System (INIS)

Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.

2017-01-01

Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20–25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30–60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p + implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO 2 interface charge densities ( Q f ) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p + implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Q f , that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.

Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection

Science.gov (United States)

Peltola, T.; Eremin, V.; Verbitskaya, E.; Härkönen, J.

2017-09-01

Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence of energetic particles, detectors with fast response to fit the short shaping time of 20-25 ns and sufficient radiation hardness are required. Charge collection measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30-60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations. As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p+ implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO2 interface charge densities (Qf) were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p+ implant the negative response vanishes and the collected charge at the active strip increases respectively. The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The main result of the study is that a threshold value of Qf, that enables negligible losses of collected charges, is defined. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.

Simulation studies for the ATLAS upgrade Strip tracker

CERN Document Server

Wang, Jike; The ATLAS collaboration

2017-01-01

ATLAS is making extensive efforts towards preparing a detector upgrade for the High luminosity operations of the LHC (HL-LHC), which will commence operation in ~10 years. The current ATLAS Inner Detector will be replaced by a all-silicon tracker (comprising an inner Pixel tracker and outer Strip tracker). The software currently used for the new silicon tracker is broadly inherited from that used for the LHC Run 1 and 2, but many new developments have been made to better fulfil the future detector and operation requirements. One aspect in particular which will be highlighted is the simulation software for the Strip tracker. The available geometry description software (including the detailed description for all the sensitive elements, the services, etc.) did not allow for accurate modeling of the planned detector design. A range of sensors/layouts for the Strip tracker are being considered and must be studied in detailed simulations in order to assess the performance and ascertain that requirements are met. For...

Charge-partitioning study of a wide-pitch silicon micro-strip detector with a 64-channel CMOS preamplifier array

International Nuclear Information System (INIS)

Ikeda, H.; Tsuboyama, T.; Okuno, S.; Saitoh, Y.; Akamine, T.; Satoh, K.; Inoue, M.; Yamanaka, J.; Mandai, M.; Takeuchi, H.; Kitta, T.; Miyahara, S.; Kamiya, M.

1996-01-01

The wider pitch readout operation of a 50 μm-pitch double-sided silicon micro-strip detector has been studied specifically concerning its ohmic side. Every second readout and ganged configuration was examined by employing a newly developed 64-channel preamplifier array. The observed charge responses for collimated IR light were compared with a numerical model. (orig.)

The Honeycomb Strip Chamber

International Nuclear Information System (INIS)

Graaf, Harry van der; Buskens, Joop; Rewiersma, Paul; Koenig, Adriaan; Wijnen, Thei

1991-06-01

The Honeycomb Strip Chamber (HSC) is a new position sensitive detector. It consists of a stack of folded foils, forming a rigid honeycomb structure. In the centre of each hexagonal cell a wire is strung. Conducting strips on the foils, perpendicular to the wires, pick up the induced avalanche charge. Test results of a prototype show that processing the signals form three adjacent strips nearest to the track gives a spatial resolution better than 64 μm for perpendicular incident tracks. The chamber performance is only slightly affected by a magnetic field. (author). 25 refs.; 21 figs

Study of micro-strip gas ionisation chambers substrates for CMS experiment at LHC

International Nuclear Information System (INIS)

Pallares, A.

1996-01-01

High luminosity, expected interaction and dose rates of the future LHC collider require the development of micro-strips gas chambers. In addition to optimization of this new detector, this work is concerned with understanding of gain loss phenomena. Influence of the gas substrate is carefully analysed, as well as theoretical concepts concerning glasses and their behaviour under polarization and irradiation, and the consequence on detection operations.Electron spin resonance is used to study, in standard glass, creation of radiation induced defects which may be charged. (D.L.)

Charge collection properties of heavily irradiated epitaxial silicon detectors

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Fretwurst, E.; Lindstroem, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2005-01-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75μm thicknesses (ρ=50Ωcm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10 16 cm -2 . Charge collection for minimum ionizing electrons from a 90 Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC

Charge collection properties of heavily irradiated epitaxial silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)]. E-mail: Gregor.Kramberger@ijs.si; Cindro, V. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Dolenc, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Fretwurst, E. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Lindstroem, G. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Mandic, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Mikuz, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Zavrtanik, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)

2005-12-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75{mu}m thicknesses ({rho}=50{omega}cm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10{sup 16}cm{sup -2}. Charge collection for minimum ionizing electrons from a {sup 90}Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.

High Precision Axial Coordinate Readout for an Axial 3-D PET Detector Module using a Wave Length Shifter Strip Matrix

CERN Document Server

Braem, André; Joram, C; Séguinot, Jacques; Weilhammer, P; De Leo, R; Nappi, E; Lustermann, W; Schinzel, D; Johnson, I; Renker, D; Albrecht, S

2007-01-01

We describe a novel method to extract the axial coordinate from a matrix of long axially oriented crystals, which is based on wavelength shifting plastic strips. The method allows building compact 3-D axial gamma detector modules for PET scanners with excellent 3-dimensional spatial, timing and energy resolution while keeping the number of readout channels reasonably low. A voxel resolution of about 10 mm3 is expected. We assess the performance of the method in two independent ways, using classical PMTs and G-APDs to read out the LYSO (LSO) scintillation crystals and the wavelength shifting strips. We observe yields in excess of 35 photoelectrons from the strips for a 511 keV gamma and reconstruct the axial coordinate with a precision of about 2.5 mm (FWHM).

Charge collection and charge pulse formation in highly irradiated silicon planar detectors

International Nuclear Information System (INIS)

Dezillie, B.; Li, Z.; Eremin, V.

1998-06-01

The interpretation of experimental data and predictions for future experiments for high-energy physics have been based on conventional methods like capacitance versus voltage (C-V) measurements. Experiments carried out on highly irradiated detectors show that the kinetics of the charge collection and the dependence of the charge pulse amplitude on the applied bias are deviated too far from those predicted by the conventional methods. The described results show that in highly irradiated detectors, at a bias lower than the real full depletion voltage (V fd ), the kinetics of the charge collection (Q) contains a fast and a slow component. At V = V fd *, which is the full depletion voltage traditionally determined by the extrapolation of the fast component amplitude of q versus bias to the maximum value or from the standard C-V measurements, the pulse has a slow component with significant amplitude. This slow component can only be eliminated by applying additional bias that amounts to the real full depletion voltage (V fd ) or more. The above mentioned regularities are explained in this paper in terms of a model of an irradiated detector with multiple regions. This model allows one to use C-V, in a modified way, as well as TChT (transient charge technique) measurements to determine the V fd for highly irradiated detectors

Development of Silicon Detectors for the High Luminosity LHC

International Nuclear Information System (INIS)

Eichhorn, Thomas Valentin

2015-07-01

The Large Hadron Collider (LHC) at CERN will be upgraded to a High Luminosity LHC in the year 2022, increasing the instantaneous luminosity by a factor of five. This will have major impacts on the experiments at the LHC, such as the Compact Muon Solenoid (CMS) experiment, and especially for their inner silicon tracking systems. Among other things, the silicon sensors used therein will be exposed to unprecedented levels of radiation damage, necessitating a replacement of the entire tracking detector. In order to maintain the excellent current performance, a new tracking detector has to be equipped with sensors of increased radiation hardness and higher granularity. The CMS experiment is undertaking an extensive R and D campaign in the search for the future silicon sensor technology baseline to be used in this upgrade. This thesis presents two methods suitable for use in this search: finite element TCAD simulations and test beam measurements. The simulations are focussed on the interstrip capacitance between sensor strips and are compared to measurements before and after the inclusion of radiation damage effects. A geometrical representation of the strip sensors used in the campaign has been found, establishing the predictive power of simulations. The test beam measurements make use of the high-precision pixel telescopes available at the DESY-II test beam facility. The performance of these telescopes has been assessed and their achievable pointing resolution has been found to be below 2 μm. Thin, epitaxial silicon is a candidate material for usage in radiation hard sensors for the future CMS tracking detector. Sample strip sensors of this material have been irradiated to fluences of up to 1.3 x 10 16 n eq /cm 2 with 800 MeV or 23 GeV protons. Test beam measurements with 5 GeV electrons have been performed to investigate the radiation hardness of epitaxial sensors using the pixel beam telescopes. The epitaxial device under test (DUT) has been integrated into the

A GEM readout with radial zigzag strips and linear charge-sharing response

Science.gov (United States)

Zhang, Aiwu; Hohlmann, Marcus; Azmoun, Babak; Purschke, Martin L.; Woody, Craig

2018-04-01

We study the position sensitivity of radial zigzag strips intended to read out large GEM detectors for tracking at future experiments. Zigzag strips can cover a readout area with fewer strips than regular straight strips while maintaining good spatial resolution. Consequently, they can reduce the number of required electronic channels and related cost for large-area GEM detector systems. A non-linear relation between incident particle position and hit position measured from charge sharing among zigzag strips was observed in a previous study. We significantly reduce this non-linearity by improving the interleaving of adjacent physical zigzag strips. Zigzag readout structures are implemented on PCBs and on a flexible foil and are tested using a 10 cm × 10 cm triple-GEM detector scanned with a strongly collimated X-ray gun on a 2D motorized stage. Angular resolutions of 60-84 μrad are achieved with a 1.37 mrad angular strip pitch at a radius of 784 mm. On a linear scale this corresponds to resolutions below 100 μm.

LHCb - SALT, a dedicated readout chip for strip detectors in the LHCb Upgrade experiment

CERN Multimedia

Swientek, Krzysztof Piotr

2015-01-01

Silicon strip detectors in the upgraded Tracker of LHCb experiment will require a new readout 128-channel ASIC called SALT. It will extract and digitise analogue signals from the sensor, perform digital processing and transmit serial output data. SALT is designed in CMOS 130 nm process and uses a novel architecture comprising of analogue front-end and ultra-low power ($<$0.5 mW) fast (40 MSps) sampling 6-bit ADC in each channel. A prototype of first 8-channel version of SALT chip, comprising all important functionalities, was submitted. Its design and possibly first tests results will be presented.

A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures

CERN Document Server

Santocchia, A; Hall, G; MacEvoy, B; Moscatelli, F; Passeri, D; Pignatel, Giogrio Umberto

2003-01-01

The effect of particle irradiation on high-resistivity silicon detectors has been extensively studied with the goal of engineering devices able to survive the very challenging radiation environment at the CERN Large Hadron Collider (LHC). The main aspect under investigation has been the changes observed in detector effective doping concentration (N/sub eff/). We have previously proposed a mechanism to explain the evolution of N/sub eff/, whereby charge is exchanged directly between closely-spaced defect centres in the dense terminal clusters formed by hadron irradiation. This model has been implemented in both a commercial finite-element device simulator (ISE-TCAD) and a purpose-built simulation of interdefect charge exchange. To control the risk of breakdown due to the high leakage currents foreseen during ten years of LHC operation, silicon detectors will be operated below room temperature (around -10 degrees C). This, and more general current interest in the field of cryogenic operation, has led us to inve...

Two-dimensional readout system for radiation detector

International Nuclear Information System (INIS)

Lee, L.Y.

1975-01-01

A two dimensional readout system has been provided for reading out locations of scintillations produced in a scintillation type radiation detector array wherein strips of scintillator material are arranged in a parallel planar array. Two sets of light guides are placed perpendicular to the scintillator strips, one on the top and one on the bottom to extend in alignment across the strips. Both the top and bottom guides are composed of a number of 90 0 triangular prisms with the lateral side forming the hypotenuse equal to twice the width of a scintillator strip. The prism system reflects light from a scintillation along one of the strips back and forth through adjacent strips to light pipes coupled to the outermost strips of the detector array which transmit light pulses to appropriate detectors to determine the scintillation along one axis. Other light pipes are connected to the end portions of the strips to transmit light from the individual strips to appropriate light detectors to indicate the particular strip activated, thereby determining the position of a scintillation along the other axis. The number of light guide pairs may be equal the number of the scintillation strips when equal spatial resolution for each of the two coordinates is desired. When the scintillator array detects an event which produces a scintillation along one of the strips, the emitted light travels along four different paths, two of which are along the strip, and two of which are through the light guide pair perpendicular to the strips until all four beams reach the outer edges of the array where they may be transmitted to light detectors by means of light pipes connected therebetween according to a binary code for direct digital readout. (U.S.)

Micro-strip sensors based on CVD diamond

Energy Technology Data Exchange (ETDEWEB)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D. E-mail: dirk.meier@cern.ch; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M

2000-10-11

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

Micro-strip sensors based on CVD Diamond

CERN Document Server

Adam, W; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Krammer, Manfred; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S R; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zoeller, M M

2000-01-01

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

Micro-strip sensors based on CVD diamond

International Nuclear Information System (INIS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

2000-01-01

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation

Micro-strip sensors based on CVD diamond

Science.gov (United States)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; RD42 Collaboration

2000-10-01

In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

Modeling of displacement damage in silicon carbide detectors resulting from neutron irradiation

Science.gov (United States)

Khorsandi, Behrooz

There is considerable interest in developing a power monitor system for Generation IV reactors (for instance GT-MHR). A new type of semiconductor radiation detector is under development based on silicon carbide (SiC) technology for these reactors. SiC has been selected as the semiconductor material due to its superior thermal-electrical-neutronic properties. Compared to Si, SiC is a radiation hard material; however, like Si, the properties of SiC are changed by irradiation by a large fluence of energetic neutrons, as a consequence of displacement damage, and that irradiation decreases the life-time of detectors. Predictions of displacement damage and the concomitant radiation effects are important for deciding where the SiC detectors should be placed. The purpose of this dissertation is to develop computer simulation methods to estimate the number of various defects created in SiC detectors, because of neutron irradiation, and predict at what positions of a reactor, SiC detectors could monitor the neutron flux with high reliability. The simulation modeling includes several well-known---and commercial---codes (MCNP5, TRIM, MARLOWE and VASP), and two kinetic Monte Carlo codes written by the author (MCASIC and DCRSIC). My dissertation will highlight the displacement damage that may happen in SiC detectors located in available positions in the OSURR, GT-MHR and IRIS. As extra modeling output data, the count rates of SiC for the specified locations are calculated. A conclusion of this thesis is SiC detectors that are placed in the thermal neutron region of a graphite moderator-reflector reactor have a chance to survive at least one reactor refueling cycle, while their count rates are acceptably high.

Proton Irradiation of CVD Diamond Detectors for High Luminosity Experiments at the LHC

CERN Document Server

Meier, D; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Jany, C; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Marshall, R D; Mishina, M; Le Normand, F; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

1999-01-01

CVD diamond shows promising properties for use as a position sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardn ess of diamond we exposed CVD diamond detector samples to 24~GeV/$c$ and 500~MeV protons up to a fluence of $5\\times 10^{15}~p/{\\rm cm^2}$. We measured the charge collection distance, the ave rage distance electron hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to $1\\ times 10^{15}~p/{\\rm cm^2}$ and decreases by $\\approx$40~\\% at $5\\times 10^{15}~p/{\\rm cm^2}$. Leakage currents of diamond samples were below 1~pA before and after irradiation. The particle indu ced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage curren t. We conclude that CVD diamond detectors are radia...

Large-scale module production for the CMS silicon strip tracker

CERN Document Server

Cattai, A

2005-01-01

The Silicon Strip Tracker (SST) for the CMS experiment at LHC consists of 210 m**2 of silicon strip detectors grouped into four distinct sub-systems. We present a brief description of the CMS Tracker, the industrialised detector module production methods and the current status of the SST with reference to some problems encountered at the factories and in the construction centres.

Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

International Nuclear Information System (INIS)

Borer, K.; Janos, S.; Palmieri, V.G.; Dezillie, B.; Li, Z.; Collins, P.; Niinikoski, T.O.; Lourenco, C.; Sonderegger, P.; Borchi, E.; Bruzzi, M.; Pirollo, S.; Granata, V.; Pagano, S.; Chapuy, S.; Dimcovski, Z.; Grigoriev, E.; Bell, W.; Devine, S.R.H.; O'Shea, V.; Smith, K.; Berglund, P.; Boer, W. de; Hauler, F.; Heising, S.; Jungermann, L.; Casagrande, L.; Cindro, V.; Mikuz, M.; Zavartanik, M.; Via, C. da; Esposito, A.; Konorov, I.; Paul, S.; Schmitt, L.; Buontempo, S.; D'Ambrosio, N.; Pagano, S.; Ruggiero, G.; Eremin, V.; Verbitskaya, E.

2000-01-01

The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2x10 15 n/cm 2 yields a MIP signal of at least 15000 e - both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The 'Lazarus effect' was thus shown to extend to fluences at least ten times higher than was previously studied

The noise analysis and optimum filtering techniques for a two-dimensional position sensitive orthogonal strip gamma ray detector employing resistive charge division

International Nuclear Information System (INIS)

Gerber, M.S.; Muller, D.W.

1976-01-01

The analysis of an orthogonal strip, two-dimensional position sensitive high purity germanium gamma ray detector is discussed. Position sensitivity is obtained by connecting each electrode strip on the detector to a resistor network. Charge, entering the network, divides in relation to the resistance between its entry point and the virtual earth points of the charge sensitive preamplifiers located at the end of each resistor network. The difference of the voltage pulses at the output of each preamplifier is proportional to the position at which the charge entered the resistor network and the sum of the pulse is proportional to the energy of the detected gamma ray. The analysis and spatial noise resolution is presented for this type of position sensitive detector. The results of the analysis show that the position resolution is proportional to the square root of the filter amplifier's output pulse time constant and that for energy measurement the resolution is maximized at the filter amplifier's noise corner time constant. The design of the electronic noise filtering system for the prototype gamma ray camera was based on the mathematical energy and spatial resolution equations. For the spatial channel a Gaussian trapezoidal filtering system was developed. Gaussian filtering was used for the energy channel. The detector noise model was verified by taking rms noise measurements of the filtered energy and spatial pulses from resistive readout charge dividing detectors. These measurements were within 10% of theory. (Auth.)

Characterisation of micro-strip and pixel silicon detectors before and after hadron irradiation

CERN Document Server

Allport, P.P

2012-01-01

The use of segmented silicon detectors for tracking and vertexing in particle physics has grown substantially since their introduction in 1980. It is now anticipated that roughly 50,000 six inch wafers of high resistivity silicon will need to be processed into sensors to be deployed in the upgraded experiments in the future high luminosity LHC (HL-LHC) at CERN. These detectors will also face an extremely severe radiation environment, varying with distance from the interaction point. The volume of required sensors is large and their delivery is required during a relatively short time, demanding a high throughput from the chosen suppliers. The current situation internationally, in this highly specialist market, means that security of supply for large orders can therefore be an issue and bringing additional potential vendors into the field can only be an advantage. Semiconductor companies that could include planar sensors suitable for particle physics in their product lines will, however, need to prove their pro...

Test-Beam Results on <100> Silicon Prototype Detectors with APV6 Front-End Chip Readout

CERN Document Server

Winkler, Matthias

2000-01-01

Results are presented using data collected during the X5 test-beam performed in August 1999. To achieve a good estimate of signal and noise values, the raw data are processed off-line by a dedicated reconstruction program. In particular, an efficient algorithm for pedestal, noise and common mode calculation was developed and tested. The intrinsic performances of an AC-coupled CMS silicon micro-strip multi-geometry prototype detector, with a <100> crystal orientation and a low resistivity ( 1~k Omega cm), are investigated. This detector was exposed to an irradiation fluence of 3 imes10^{14} p/cm ^2 , equivalent to 10 years of operation at LHC. The signal-to-noise ratio and the ghost rates per strip and per cm ^2 are presented, as a function of the bias voltage.

Design, characterization and beam test performance of different silicon microstrip detector geometries

International Nuclear Information System (INIS)

Catacchini, E.; Ciampolini, L.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, M.; Meschini, M.; Parrini, G.; Pieri, M.

1998-01-01

During the last few years a large number of silicon microstrip detectors has been especially designed and tested in order to study and optimize the performances of the tracking devices to be used in the forward-backward part of the CMS (technical proposal, CERN/LHCC 94-38 LHCC/Pl, 15 December 1994) experiment. Both single and double sided silicon detectors of a trapezoidal ('wedge') shape and with different strip configurations, including prototypes produced with double metal technology, were characterized in the laboratory and tested using high-energy beams. Furthermore, due to the high-radiation environment where the detectors should operate, particular care was devoted to the study of the characteristics of heavily irradiated detectors. The main results of detector performances (charge response, signal-to-noise ratio, spatial resolution etc.) will be reviewed and discussed. (author)

Design and tests of the silicon sensors for the ZEUS micro vertex detector

International Nuclear Information System (INIS)

Dannheim, D.; Koetz, U.; Coldewey, C.; Fretwurst, E.; Garfagnini, A.; Klanner, R.; Martens, J.; Koffeman, E.; Tiecke, H.; Carlin, R.

2003-01-01

To fully exploit the HERA-II upgrade, the ZEUS experiment has installed a Micro Vertex Detector (MVD) using n-type, single-sided, silicon μ-strip sensors with capacitive charge division. The sensors have a readout pitch of 120 μm, with five intermediate strips (20 μm strip pitch). The designs of the silicon sensors and of the test structures used to verify the technological parameters, are presented. Results on the electrical measurements are discussed. A total of 1123 sensors with three different geometries have been produced by Hamamatsu Photonics K.K. Irradiation tests with reactor neutrons and 60 Co photons have been performed for a small sample of sensors. The results on neutron irradiation (with a fluence of 1x10 13 1 MeV equivalent neutrons/cm 2 ) are well described by empirical formulae for bulk damage. The 60 Co photons (with doses up to 2.9 kGy) show the presence of generation currents in the SiO 2 -Si interface, a large shift of the flatband voltage and a decrease of the hole mobility

Study of surface properties of ATLAS12 strip sensors and their radiation resistance

Energy Technology Data Exchange (ETDEWEB)

Mikestikova, M., E-mail: mikestik@fzu.cz [Academy of Sciences of the Czech Republic, Institute of Physics, Na Slovance 2, 18221 Prague 8 (Czech Republic); Allport, P.P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Kuczewski, P.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Hommels, L.B.A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ullan, M. [Centro Nacional de Microelectronica (IMB-CNM, CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain); Bloch, I.; Gregor, I.M.; Tackmann, K. [DESY, Notkestrasse 85, 22607 Hamburg (Germany); Hauser, M.; Jakobs, K.; Kuehn, S. [Physikalisches Institut, Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); and others

2016-09-21

A radiation hard n{sup +}-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the “ATLAS ITk Strip Sensor collaboration” and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in “punch-through protection” (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×10{sup 16} n{sub eq}/cm{sup 2}, by reactor neutron fluence of 1×10{sup 15} n{sub eq}/cm{sup 2} and by gamma rays from {sup 60}Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07. - Highlights: �

Design and performance of the ABCD3TA ASIC for readout of silicon strip detectors in the ATLAS semiconductor tracker

Czech Academy of Sciences Publication Activity Database

Campabadal, F.; Fleta, C.; Key, M.; Böhm, Jan; Mikeštíková, Marcela; Šťastný, Jan

2005-01-01

Roč. 552, - (2005), s. 292-328 ISSN 0168-9002 R&D Projects: GA MŠk 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : front-end electronics * binary readout * silicon strip detectors * application specific integrated circuits * quality assurance Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.224, year: 2005

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

Science.gov (United States)

Meier, D.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Manfredi, P. F.; Marshall, R. D.; Mishina, M.; Le Normand, F.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-04-01

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/ c and 500 Mev protons up to a fluence of 5×10 15 p/cm 2. We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1×10 15 p/cm 2 and decreases by ≈40% at 5×10 15 p/cm 2. Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/ c and 500 MeV protons up to at least 1×10 15p/cm 2 without signal loss.

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

International Nuclear Information System (INIS)

Meier, D.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Manfredi, P.F.; Marshall, R.D.; Mishina, M.; Le Normand, F.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.

1999-01-01

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/c and 500 Mev protons up to a fluence of 5x10 15 p/cm 2 . We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1x10 15 p/cm 2 and decreases by ∼40% at 5x10 15 p/cm 2 . Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/c and 500 MeV protons up to at least 1x10 15 p/cm 2 without signal loss

High irradiation and ageing properties of resistive Micromegas detectors at the new CERN Gamma Irradiation Facility

CERN Document Server

Andreou, Dimitra

2016-01-01

Resistive Micromegas have been developed in recent years with the aim of making this technology usable in HEP experiments where the high sparking rate of classical Micromegas is not tolerable. A resistive Micromegas with four layers and an active surface of 0.5 m2 each, has been designed and built at CERN as prototype of the detectors to be used for the upgrade of the ATLAS experiment. The detector has been exposed to an intense gamma source of 16 TBq in order to study the effects of ageing and evaluate the detector behavior under high irradiation.

Testbeam and laboratory test results of irradiated 3D CMS pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Bubna, Mayur [Purdue University, Department of Physics, West Lafayette, IN 47907-1396 (United States); Purdue University, School of Electrical and Computer Engineering, West Lafayette, IN 47907-1396 (United States); Alagoz, Enver, E-mail: enver.alagoz@cern.ch [Purdue University, Department of Physics, West Lafayette, IN 47907-1396 (United States); Cervantes, Mayra; Krzywda, Alex; Arndt, Kirk [Purdue University, Department of Physics, West Lafayette, IN 47907-1396 (United States); Obertino, Margherita; Solano, Ada [Istituto Nazionale di Fisica Nucleare, Sezione di Torino, 10125 Torino (Italy); Dalla Betta, Gian-Franco [INFN Padova (Gruppo Collegato di Trento) (Italy); Dipartimento di Ingegneria e Scienzadella Informazione, Universitá di Trento, I-38123 Povo di Trento (Italy); Menace, Dario; Moroni, Luigi [Istituto Nazionale di Fisica Nucleare, Sezione di Milano Bicocca (Italy); Universitá degli Studi di Milano Bicocca, 20126 Milano (Italy); Uplegger, Lorenzo; Rivera, Ryan [Fermi National Accelerator Laboratory, Batavia, IL 60510-0500 (United States); Osipenkov, Ilya [Texas A and M University, Department of Physics, College Station, TX 77843-4242 (United States); Andresen, Jeff [Fermi National Accelerator Laboratory, Batavia, IL 60510-0500 (United States); Bolla, Gino; Bortoletto, Daniela [Purdue University, Department of Physics, West Lafayette, IN 47907-1396 (United States); Boscardin, Maurizio [Centro per i Materiali e i Microsistemi Fondazione Bruno Kessler (FBK), Trento, I-38123 Povo di Trento (Italy); Marie Brom, Jean [Strasbourg IPHC, Institut Pluriedisciplinaire Hubert Curien, F-67037 Strasbourg Cedex (France); Brosius, Richard [State University of New York at Buffalo (SUNY), Department of Physics, Buffalo, NY 14260-1500 (United States); Chramowicz, John [Fermi National Accelerator Laboratory, Batavia, IL 60510-0500 (United States); and others

2013-12-21

The CMS silicon pixel detector is the tracking device closest to the LHC p–p collisions, which precisely reconstructs the charged particle trajectories. The planar technology used in the current innermost layer of the pixel detector will reach the design limit for radiation hardness at the end of Phase I upgrade and will need to be replaced before the Phase II upgrade in 2020. Due to its unprecedented performance in harsh radiation environments, 3D silicon technology is under consideration as a possible replacement of planar technology for the High Luminosity-LHC or HL-LHC. 3D silicon detectors are fabricated by the Deep Reactive-Ion-Etching (DRIE) technique which allows p- and n-type electrodes to be processed through the silicon substrate as opposed to being implanted through the silicon surface. The 3D CMS pixel devices presented in this paper were processed at FBK. They were bump bonded to the current CMS pixel readout chip, tested in the laboratory, and testbeams carried out at FNAL with the proton beam of 120 GeV/c. In this paper we present the laboratory and beam test results for the irradiated 3D CMS pixel devices. -- Highlights: •Pre-irradiation and post-irradiation electrical properties of 3D sensors and 3D diodes from various FBK production batches were measured and analyzed. •I–T measurements of gamma irradiated diodes were analyzed to understand leakage current generation mechanism in 3D diodes. •Laboratory measurements: signal to noise ratio and charge collection efficiency of 3D sensors before and after irradiation. •Testbeam measurements: pre- and post-irradiation pixel cell efficiency and position resolution of 3D sensors.

Lithium analysis using a double-sided silicon strip detector at LIBAF

Science.gov (United States)

De La Rosa, Nathaly; Kristiansson, Per; Nilsson, E. J. Charlotta; Ros, Linus; Elfman, Mikael; Pallon, Jan

2017-08-01

Quantification and mapping possibilities of lithium in geological material, by Nuclear Reaction Analysis (NRA), was evaluated at the Lund Ion Beam Analysis Facility (LIBAF). LiF and two Standard Reference Materials, (SRM 610 and SRM 612) were used in the investigation. The main part of the data was obtained at the beam energy 635 keV studying the high Q-value reaction 7Li(p, α)4He, but reaction yield and detection limits were also briefly investigated as a function of the energy. A double-sided silicon strip detector (DSSSD) was used to detect the α -particles emitted in the reaction in the backward direction. The combination of the high Q-value, a reasonably good cross-section and the possibility to use a high beam current have been demonstrated to allow for measurement of concentrations down below 50 ppm. Proton energies below 800 keV were demonstrated to be appropriate energies for extracting lithium in combination with boron analysis.

Test of radiation hardness of pcCVD detectors

Energy Technology Data Exchange (ETDEWEB)

Schlemme, Steffen [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Enders, Joachim [Technische Universitaet Darmstadt (Germany); Figuera, P.; Salamone, S. [LNS-INFN Catania (Italy); Fruehauf, J.; Kis, Mladen; Kratz, A.; Kurz, N.; Loechner, S.; Nociforo, Chiara; Schirru, Fabio; Szczepanczyk, B.; Traeger, M.; Visinka, R. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Musumarra, A. [LNS-INFN Catania (Italy); University of Catania (Italy)

2016-07-01

The new in-flight separator Super-FRS is under construction at the Facility for Antiproton and Ion Research (FAIR, Darmstadt). Ion rates up to 3 x 10{sup 11} {sup 238}U/spill demand an adaption of detectors to a high radiation environment. A test experiment to investigate the radiation hardness of polycrystalline diamond detectors (pcCVD) was performed at the LNS-INFN in Catania using a {sup 12}C beam at 62 MeV/u and intensities of up to 1.5 pnA. The setup consisted of pcCVD strip detectors to measure the beam profile, a single crystal diamond detector to calibrate the ionisation chamber working in current mode as a beam intensity monitor and a pcCVD sample to be irradiated. The IC used was designed for FAIR and showed a stable counting rate allowing us to calibrate and perform beam intensity measurements with it. The total measured counts on the sample were 8.25 x 10{sup 11} counts/mm{sup 2} over a period of 60 hours. Digital waveforms of the pcCVD signals were taken with an oscilloscope and analysed. The results showed no change of the pcCVD signal properties during the entire irradiation.

High rate behavior and discharge limits in micro-pattern detectors

International Nuclear Information System (INIS)

Bressan, A.; Hoch, M.; Pagano, P.; Ropelewski, L.; Sauli, F.; Biagi, S.; Buzulutskov, A.; Gruwe, M.; De Lentdecker, G.; Moermann, D.; Sharma, A.

1999-01-01

We present and discuss a set of systematic measurements, carried out with gaseous proportional micro-pattern detectors, in order to assess their maximum gain when irradiated with high-rate soft X-rays and heavily ionizing alpha particles. The inventory of detectors tested includes: micro-strips, micromegas, micro-dot, gas electron multiplier, CAT (compteur a trous), trench (or groove), micro-CAT (or WELL) detectors, as well as systems with two elements of gaseous amplification in cascade. We confirm the general trend of all single-stage detectors to follow Raether's criterion, i.e. a spontaneous transition from avalanche to streamer, followed by a discharge, when the avalanche size reaches a value of a few 10 7 ; a noticeable exception is the micro-dot counter holding more than 10 8 . In multiple structures, where the gain is shared between two devices in cascade, the maximum overall gain under irradiation is increased by at least one order of magnitude; we speculate this to be a consequence of a voltage dependence of Raether's limit, larger for low operating potentials. Our conclusion is that only multiple devices can guarantee a sufficient margin of reliability for operation in harsh LHC running conditions

A normalization of the physical tests for external irradiation measuring detectors

International Nuclear Information System (INIS)

1977-05-01

This report is the result of a normalization work, realized within the Radioprotection Services of the C.E.A., of the physical tests for detectors measuring external irradiation. Among the various tests mentionned are treated more in details, calibration and the establishment of the relative spectral response. As far as calibration is concerned, the normalization refers to: the reference detector, the reference radiation source, the installation and calibration procedure. As for the relative spectral response the normalization refers to: the reference detector, the radiation sources to be used. Finally, a chapter is consecrated to the high flux detectors and to those for pulsed electromagnetic radiations [fr

Construction of two large-size four-plane micromegas detectors

CERN Document Server

Bianco, Michele; Degrange, Jordan; De Oliveira, Rui; Düdder, Andreas; Farina, Edoardo; Kuger, Fabian; Iengo, Paolo; Gomez, Francisco Perez; Lin, Tai-Hua; Schott, Matthias; Sekhniaidze, Givi; Sforza, Federico; Sidiropoulou, Ourania; Valderanis, Chrysostomos; Vergain, Maurice; Wotschack, Jörg

2016-01-01

We report on the construction and initial performance studies of two micromegas detector quadruplets with an area of 0.5 m$^2$. They serve as prototypes for the planned upgrade project of the ATLAS muon system. Their design is based on the resistive-strip technology and thus renders the detectors spark tolerant. Each quadruplet comprises four detection layers with 1024 readout strips and a strip pitch of 415 $\\mu$m. In two out of the four layers the strips are inclined by $\\pm$1.5$^{\\circ}$ to allow for the measurement of a second coordinate. We present the detector concept and report on the experience gained during the detector construction. In addition an evaluation of the detector performance with cosmic rays and test-beam data is given.

Characterisation of silicon detectors for the LHCb Vertex Locator Upgrade

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00401830

The LHCb Vertex Locator must be upgraded in the next long shutdown of the LHC, starting at the end of 2018. This is due to the increased occupancy. The current silicon strip detector is being upgraded to a silicon pixel detector. The prototype sensors for this detector were tested thoroughly before a final design will be chosen. The testing was done with the Timepix3 Telescope, which was commissioned in the summer of 2014. The charge collected by the sensors and efficiency of the sensors were investigated. After maximum irradiation, of 8$\\times$10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, the sensors must have a most probable value of collected charge of 6000 electrons before 1000 V or breakdown, whichever comes first. The sensors must also have a high efficiency at maximum irradiation of 8$\\times$10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. All tested sensors reach these criteria. All sensors reach 6000 electrons between 600 V and 800 V and have a cluster finding efficiency of over 95\\% at the respective voltages. Overall, a 15...

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

Energy Technology Data Exchange (ETDEWEB)

Meier, D. E-mail: dirk.meier@cern.ch.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Manfredi, P.F.; Marshall, R.D.; Mishina, M.; Le Normand, F.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

1999-04-21

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/c and 500 Mev protons up to a fluence of 5x10{sup 15} p/cm{sup 2}. We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1x10{sup 15} p/cm{sup 2} and decreases by {approx}40% at 5x10{sup 15} p/cm{sup 2}. Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/c and 500 MeV protons up to at least 1x10{sup 15}p/cm{sup 2} without signal loss.

The effect of ArF laser irradiation (193 nm) on the photodegradation and etching properties of alpha-irradiated CR-39 detectors

Energy Technology Data Exchange (ETDEWEB)

Shakeri Jooybari, B. [Department of Energy Engineering and Physics, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Nuclear Science and Technology Research Institute (NSRT), Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Ghergherehchi, M. [College of Information and Technology/ school of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon (Korea, Republic of); Afarideh, H., E-mail: hafarideh@aut.ac.ir [Department of Energy Engineering and Physics, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran, Islamic Republic of Iran (Iran, Islamic Republic of); Lamehi-Rachti, M. [Nuclear Science and Technology Research Institute (NSRT), Tehran, Islamic Republic of Iran (Iran, Islamic Republic of)

2015-01-01

The effects of ArF laser irradiation (λ=193nm) at various fluences (energy dose or energy density) on the etching properties of pre-exposed (laser + alpha) CR-39 detectors were studied. First, UV–Vis and Fourier transform infrared (FTIR) spectra were acquired for non-laser-irradiated and laser-irradiated samples to detect the influence of the ArF laser on the chemical modification of the CR-39. Changes observed in the spectra indicated that the predominant process that occurred upon ArF laser irradiation was a bond-scission process. Thereafter, the mean track and bulk etching parameters were experimentally measured in ArF-laser-irradiated CR-39 detectors exposed to an alpha source ({sup 241}Am, E = 5.49 MeV). Inhomogeneous regions in the laser-irradiated side of the CR-39 demonstrated a variable etching rate on only the front side of the CR-39 detector. New equations are also presented for the average bulk etching rate for these inhomogeneous regions (front side). The mean bulk and track etching rates and the mean track dimensions increased in a fluence range of 0–37.03 mJ/cm{sup 2} because of photodegradation and the scission of chemical bonds, which are the predominant processes in this range. When the fluence was increased from 37.03 to 123.45 mJ/cm{sup 2}, the bulk and track etching rates and the track dimensions slowly decreased because of the formation of cross-linked structures on the CR-39 surface. The behavior of the bulk and track etching rates and the track dimensions appears to be proportional to the dose absorbed on the detector surface. It was observed that as the etching time was increased, the bulk and track etching rates and the track dimensions of the laser-irradiated samples decreased because of the shallow penetration depth of the 193 nm laser and the reduction in the oxygen penetration depth.

TOSCA simulation of some effects observed in irradiated silicon detectors

International Nuclear Information System (INIS)

Moszczynski, A.S.

2001-12-01

TOSCA package has been used to simulate some effects observed recently in heavily irradiated silicon detectors. In particular, unexpected possibility of α-particle registration at p+ contact has been explained without presented elsewhere assumption that there was p-n junction of unknown origin beneath p+ layer. Performed simulations showed that assumption on relaxation-like character of irradiated silicon material is also not necessary to explain such effects like low-voltage capacitance peak in reverse bias and negative capacitance in forward bias. (author)

Design,construction and commissioning of a cylinder of double-sided silicon micro-strips detectors for the Star experiment at RHIC

International Nuclear Information System (INIS)

Guedon, M.

2005-05-01

This study has been performed in the frame of quark gluon plasma physics research in the STAR experiment at RHIC. It deals with the design, the construction and the commissioning of a barrel of silicon-strip detectors (SSD). Added to the Silicon Vertex Tracker (SVT) of the STAR detector, it extends the capabilities of track reconstruction for charged particles emitted in ultra-relativistic heavy-ion collisions. It also contributes to the general study of the quark-gluon plasma production undertaken at STAR. The SSD is a cylinder of 1 m long and of 23 cm radius, and it is composed of 320 compact identical modules. Each module includes one double-sided silicon micro-strip detector, 12 readout chips ALICE 128C, 12 TAB ribbons, 2 COSTAR control chips and 2 hybrids supporting all the components. The document explains why the SSD is an important and relevant element, and justifies the technological choices as well as their validation by in-beam characterization. All component functionalities, characteristics and test procedures are presented. The data and test results are stored in a database for tracing purpose. Component and module production is described. Two parallel studies have been performed, analysed and described. One on the temperature dependence of the module performances and the other one on the optimal adjustments of the analogue blocks inside the ALICE 128C chip. The SSD installation on the RHIC site as well as the commissioning are presented together with the first data takings. (author)

Development of double-sided silicon strip detectors (DSSD) for a Compton telescope

International Nuclear Information System (INIS)

Takeda, Shin'ichiro; Watanabe, Shin; Tanaka, Takaaki; Nakazawa, Kazuhiro; Takahashi, Tadayuki; Fukazawa, Yasushi; Yasuda, Hajimu; Tajima, Hiroyasu; Kuroda, Yoshikatsu; Onishi, Mitsunobu; Genba, Kei

2007-01-01

The low noise double-sided silicon strip detector (DSSD) technology is used to construct a next generation Compton telescope which is required to have both high-energy resolution and high-Compton reconstruction efficiency. In this paper, we present the result of a newly designed stacked DSSD module with high-energy resolution in highly packed mechanical structure. The system is designed to obtain good P-side and N-side noise performance by means of DC-coupled read-out. Since there are no decoupling capacitors in front-end electronics before the read-out ASICs, a high density stacked module with a pitch of 2 mm can be constructed. By using a prototype with four-layer of DSSDs with an area of 2.56cmx2.56cm, we have succeeded to operate the system. The energy resolution at 59.5 keV is measured to be 1.6 keV (FWHM) for the P-side and 2.8 keV (FWHM) for the N-side, respectively. In addition to the DSSD used in the prototype, a 4 cm wide DSSD with a thickness of 300μm is also developed. With this device, an energy resolution of 1.5 keV (FWHM) was obtained. A method to model the detector energy response to properly handle split events is also discussed

SiliPET: An ultra high resolution design of a small animal PET scanner based on double sided silicon strip detector stacks

International Nuclear Information System (INIS)

Zavattini, G.; Cesca, N.; Di Domenico, G.; Moretti, E.; Sabba, N.

2006-01-01

We investigated the capabilities of a small animal PET scanner, named SiliPET, based on four stacks of double sided silicon strips detectors. Each stack consists of 40 silicon detectors with dimension 60x60x1mm 3 . These are arranged to form a box 5x5x6cm 3 with minor sides opened; the box represents the maximal FOV of the scanner. The performance parameters of SiliPET scanner have been estimated, giving an intrinsic spatial resolution of 0.52mm and a sensitivity of 5.1% at the center of the system

A standardization of the physical tests for external irradiation measuring detectors

International Nuclear Information System (INIS)

1977-05-01

This report is the result of a standardization work, realized within the Radioprotection Services of the A.E.C., of the physical tests for dectors measuring external irradiations. Among the various tests mentionned, calibration and the establishment of the relative spectral response are treated in details. As far as calibration is concerned, the standardization refers to: the reference detector, the reference radiation source, the installation and calibration procedure. As for the relative spectral response the standardization refers to: the reference detector, the radiation sources to be used. High flux detectors and those for pulse electromagnetic radiations are also dealt with [fr

Suppression of irradiation effects in gold-doped silicon detectors

International Nuclear Information System (INIS)

McPherson, M.; Sloan, T.; Jones, B.K.

1997-01-01

Two sets of silicon detectors were irradiated with 1 MeV neutrons to different fluences and then characterized. The first batch were ordinary p-i-n photodiodes fabricated from high-resistivity (400 Ω cm) silicon, while the second batch were gold-doped powder diodes fabricated from silicon material initially of low resistivity (20 Ω cm). The increase in reverse leakage current after irradiation was found to be more in the former case than in the latter. The fluence dependence of the capacitance was much more pronounced in the p-i-n diodes than in the gold-doped diodes. Furthermore, photo current generation by optical means was less in the gold doped devices. All these results suggest that gold doping in silicon somewhat suppresses the effects of neutron irradiation. (author)

Characteristic performance evaluation of a photon counting Si strip detector for low dose spectral breast CT imaging

Science.gov (United States)

Cho, Hyo-Min; Barber, William C.; Ding, Huanjun; Iwanczyk, Jan S.; Molloi, Sabee

2014-01-01

Purpose: The possible clinical applications which can be performed using a newly developed detector depend on the detector's characteristic performance in a number of metrics including the dynamic range, resolution, uniformity, and stability. The authors have evaluated a prototype energy resolved fast photon counting x-ray detector based on a silicon (Si) strip sensor used in an edge-on geometry with an application specific integrated circuit to record the number of x-rays and their energies at high flux and fast frame rates. The investigated detector was integrated with a dedicated breast spectral computed tomography (CT) system to make use of the detector's high spatial and energy resolution and low noise performance under conditions suitable for clinical breast imaging. The aim of this article is to investigate the intrinsic characteristics of the detector, in terms of maximum output count rate, spatial and energy resolution, and noise performance of the imaging system. Methods: The maximum output count rate was obtained with a 50 W x-ray tube with a maximum continuous output of 50 kVp at 1.0 mA. A109Cd source, with a characteristic x-ray peak at 22 keV from Ag, was used to measure the energy resolution of the detector. The axial plane modulation transfer function (MTF) was measured using a 67 μm diameter tungsten wire. The two-dimensional (2D) noise power spectrum (NPS) was measured using flat field images and noise equivalent quanta (NEQ) were calculated using the MTF and NPS results. The image quality parameters were studied as a function of various radiation doses and reconstruction filters. The one-dimensional (1D) NPS was used to investigate the effect of electronic noise elimination by varying the minimum energy threshold. Results: A maximum output count rate of 100 million counts per second per square millimeter (cps/mm2) has been obtained (1 million cps per 100 × 100 μm pixel). The electrical noise floor was less than 4 keV. The energy resolution

New results on silicon microstrip detectors of CMS tracker

International Nuclear Information System (INIS)

Demaria, N.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bolla, G.; Bosi, F.; Borrello, L.; Bortoletto, D.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Favro, G.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Li Yahong; Watts, S.; Wittmer, B.

2000-01-01

Interstrip and backplane capacitances on silicon microstrip detectors with p + strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4x10 14 protons/cm 2 of 24 GeV/c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence found to enhance the stability

Beam test results of the irradiated Silicon Drift Detector for ALICE

OpenAIRE

Kushpil, S.; Crescio, E.; Giubellino, P.; Idzik, M.; Kolozhvari, A.; Kushpil, V.; Martinez, M. I.; Mazza, G.; Mazzoni, A.; Meddi, F.; Nouais, D.; Petracek, V.; Piemonte, C.; Rashevsky, A.; Riccati, L.

2005-01-01

The Silicon Drift Detectors will equip two of the six cylindrical layers of high precision position sensitive detectors in the ITS of the ALICE experiment at LHC. In this paper we report the beam test results of a SDD irradiated with 1 GeV electrons. The aim of this test was to verify the radiation tolerance of the device under an electron fluence equivalent to twice particle fluence expected during 10 years of ALICE operation.

Dose Response of Alanine Detectors Irradiated with Carbon Ion Beams

DEFF Research Database (Denmark)

Herrmann, Rochus; Jäkel, Oliver; Palmans, Hugo

2011-01-01

Purpose: The dose response of the alanine detector shows a dependence on particle energy and type, when irradiated with ion beams. The purpose of this study is to investigate the response behaviour of the alanine detector in clinical carbon ion beams and compare the results with model predictions......-dose curves deviate from predictions in the peak region, most pronounced at the distal edge of the peak. Conclusions: The used model and its implementation show a good overall agreement for quasi mono energetic measurements. Deviations in depth-dose measurements are mainly attributed to uncertainties...

Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors

CERN Document Server

Nava, F; Canali, C; Vittone, E; Polesello, P; Biggeri, U; Leroy, C

1999-01-01

The radiation damage in 100 mu m thick Schottky diodes made on semi-insulating undoped GaAs materials, were studied using alpha-, beta-, proton- and gamma-spectroscopy as well as I-V measurements. The results have been analysed within the framework of the Hecht model to investigate the influence of the plasma produced by short-range strongly ionising particles on the detector performance after 24 GeV proton irradiation. It has been found that with the mean free drift lengths for electrons and holes determined from alpha-spectra in overdepleted detectors, the charge collection efficiency for beta-particles, cce subbeta, is well predicted in the unirradiated detectors, while in the most irradiated ones, the cce subbeta is underestimated by more than 40%. The observed disagreement can be explained by assuming that the charge carrier recombination in the plasma region of such detectors, becomes significant.

Study of surface properties of ATLAS12 strip sensors and their radiation resistance

Science.gov (United States)

Mikestikova, M.; Allport, P. P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Kuczewski, P.; Lynn, D.; Hommels, L. B. A.; Ullan, M.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Hauser, M.; Jakobs, K.; Kuehn, S.; Mahboubi, K.; Mori, R.; Parzefall, U.; Clark, A.; Ferrere, D.; Sevilla, S. Gonzalez; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; McMullen, T.; McEwan, F.; O'Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Stastny, J.; Bevan, A.; Beck, G.; Milke, C.; Domingo, M.; Fadeyev, V.; Galloway, Z.; Hibbard-Lubow, D.; Liang, Z.; Sadrozinski, H. F.-W.; Seiden, A.; To, K.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Jinnouchi, O.; Hara, K.; Sato, K.; Hagihara, M.; Iwabuchi, S.; Bernabeu, J.; Civera, J. V.; Garcia, C.; Lacasta, C.; Marti i Garcia, S.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.

2016-09-01

A radiation hard n+-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the "ATLAS ITk Strip Sensor collaboration" and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in "punch-through protection" (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×1016 neq/cm2, by reactor neutron fluence of 1×1015 neq/cm2 and by gamma rays from 60Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07.

Signal generation in highly irradiated silicon microstrip detectors for the ATLAS experiment

International Nuclear Information System (INIS)

Ruggiero, Gennaro

2003-01-01

Silicon detectors are the most diffused tracking devices in High Energy Physics (HEP). The reason of such success can be found in the characteristics of the material together with the existing advanced technology for the fabrication of these devices. Nevertheless in many modem HEP experiments the observation of vary rare events require data taking at high luminosity with a consequent extremely intense hadron radiation field that damages the silicon and degrades the performance of these devices. In this thesis work a detailed study of the signal generation in microstrip detectors has been produced with a special care for the ATLAS semiconductor tracker geometry. This has required a development of an appropriate setup to perform measurements with Transient Current/ Charge Technique. This has allowed studying the evolution of the signal in several microstrips detector samples irradiated at fluences covering the range expected in the ATLAS Semiconductor Tracker. For a better understanding of these measurements a powerful software package that simulates the signal generation in these devices has been developed. Moreover in this thesis it has been also shown that the degradation due to radiation in silicon detectors can be strongly reduced if the data taking is done with detectors operated at 130 K. This makes low temperature operation that benefits of the recovery of the charge collection efficiency in highly irradiated silicon detectors (also known as Lazarus effect) an optimal option for future high luminosity experiments. (author)

Detectors for Particle Radiation

Science.gov (United States)

Kleinknecht, Konrad

1999-01-01

This textbook provides a clear, concise and comprehensive review of the physical principles behind the devices used to detect charged particles and gamma rays, and the construction and performance of these many different types of detectors. Detectors for high-energy particles and radiation are used in many areas of science, especially particle physics and nuclear physics experiments, nuclear medicine, cosmic ray measurements, space sciences and geological exploration. This second edition includes all the latest developments in detector technology, including several new chapters covering micro-strip gas chambers, silicion strip detectors and CCDs, scintillating fibers, shower detectors using noble liquid gases, and compensating calorimeters for hadronic showers. This well-illustrated textbook contains examples from the many areas in science in which these detectors are used. It provides both a coursebook for students in physics, and a useful introduction for researchers in other fields.

Study the Z-Plane Strip Capacitance

International Nuclear Information System (INIS)

Parikh, H.; Swain, S.

2005-01-01

The BaBaR detector at the Stanford Linear Accelerator Center is currently undergoing an upgrade to improve its muon and neutral hadron detection system. The Resistive Plate Chambers (RPCs) that had been used till now have deteriorated in performance over the past few years and are being replaced by Limited Streamer Tube (LSTs). Each layer of the system consists of a set of up to 10 streamer tube modules which provide one coordinate (φ coordinate) and a single ''Z-plane'' which provides the Z coordinate of the hit. The large area Z-planes (up to 12m 2 ) are 1mm thick and contain 96 copper strips that detect the induced charge from avalanches created in the streamer tube wires. All the Z-planes needed for the upgrade have already been constructed, but only a third of the planes were installed last summer. After installing the 24 Z-planes last year, it was learned that 0.7% of the strips were dead when put inside the detector. This was mainly due to the delicate solder joint between the read-out cable and the strip, and since it is difficult to access or replace the Z-planes inside the detector, it is very important to perform various tests to make sure that the Z-planes will be efficient and effective in the long term. We measure the capacitance between the copper strips and the ground plane, and compare it to the theoretical value that we expect. Instead of measuring the capacitance channel by channel, which would be a very tedious job, we developed a more effective method of measuring the capacitance. Since all the Z-planes were built at SLAC, we also built a smaller 46 cm by 30 cm Z-plane with 12 strips just to see how they were constructed and to gain a better understanding about the solder joints

Fast neutron irradiation effects on CR-39 nuclear track detector for dosimetric applications

International Nuclear Information System (INIS)

Kader, M.H.

2005-01-01

The effect of neutron irradiation on the dosimetric properties of CR-39 solid-state nuclear track detector have been investigated. CR-39 samples were irradiated with neutrons of energies follow a Maxwellian distribution centered about 2 MeV. These samples were irradiated with different doses in the range 0.1-1 Sv. The background and track density were measured as a function of etching time. In addition, the dependence of sensitivity of CR-39 detector on the neutrons dose has been investigated. The results show that the Sensitivity started to increase at 0.4 Sv neutrons dose, so this sample were chosen to be a subject for further study to investigate the effect of gamma dose on its properties. The sample irradiated with 0.4 Sv were exposed to different doses of gamma rays at levels between 10 and 80 kGy. The effect of gamma doses on the bulk etching rate VB, the track diameter and the sensitivity of the CR-39 samples was investigated. The results show that the dosimetric properties of CR-39 SSNTD are greatly affected by both neutron and gamma irradiation

Opto-structural characterization of gamma irradiated Bayfol polymer track detector

Energy Technology Data Exchange (ETDEWEB)

Tayel, A. [Physics Department, Faculty of Industrial Education, Helwan University, Cairo (Egypt); Zaki, M.F., E-mail: moha1016@yahoo.com [Experimental Nuclear Physics Department, Nuclear Research Center, Atomic Energy Authority, P.O. 13759, Abu Zaabal, Cairo (Egypt); El Basaty, A.B. [Physics Department, Faculty of Industrial Education, Helwan University, Cairo (Egypt); Hegazy, Tarek M. [Physics Department, College of Women for Arts, Science and Education, Ain Shams University, Cairo (Egypt)

2013-11-15

Bayfol CR 1-4 is one of polymeric solid state nuclear track detector which has numerous applications due to its outstanding optical, mechanical, thermal and electrical properties. In the present study, Bayfol polymer is irradiated with different doses of gamma rays ranging from 0 to 1000 KGy. The effects of gamma irradiations on the optical, structural and chemical properties of Bayfol were studied using Ultraviolet and visible (UV/Vis) spectroscopy, X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. The UV–Vis spectra of irradiated samples show that the absorption edge is shifted towards longer wavelength comparing to pristine sample spectrum. This behavior indicates that there is a decrease in the band gap after irradiation. The maximum decrease in the band gap is about 0.8 eV. The XRD patterns of amorphous halo of pristine and irradiated samples show a fluctuation of integrated intensity of amorphous halo. This indicates a change in the structure due to gamma irradiation. In order to understand that structure change mechanism, we used the FTIR spectroscopy.

The ATLAS Inner Detector operation,data quality and tracking performance.

CERN Document Server

Stanecka, E; The ATLAS collaboration

2012-01-01

The ATLAS Inner Detector comprises silicon and gas based detectors. The Semi-Conductor Tracker (SCT) and the Pixel Detector are the key precision tracking silicon devices in the Inner Detector of the ATLAS experiment at CERN LHC. And the the Transition Radiation Tracker (TRT), the outermost of the three subsystems of the ATLAS Inner Detector is made of thin-walled proportional-mode drift tubes (straws). The Pixel Detector consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. The SCT is a silicon strip detector and is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. The TRT is made...

Simulation of medical irradiation and X-ray detector signals

Energy Technology Data Exchange (ETDEWEB)

Kreisler, Bjoern

2010-02-08

This thesis aims for an improved understanding of medical irradiation. Two major parts are investigated: the beam shaping components of a medical linear accelerator, i.e. the source of the radiation, and the signal generation inside semiconductor sensors, i.e. the detection of the radiation. The direct measurement of the spatial and spectral particle distribution in the irradiation beam is not possible with state of the art detectors due to the high particle flux. The development of new advanced detectors is the goal of the first part of this thesis. The focus is set on the signal generation inside the sensor volume of a semiconductor detector. Incoming particles interact with the sensor material and generate clouds of electron hole pairs. These pairs get separated by an applied bias voltage. The motion of the charge clouds is simulated with a finite element programme taking into account the drift and diffusion. Mirror charges are induced on the electrodes which move due to the motion of the charge cloud. The motion of the induced mirror charges leads to the signal that is detected. The transient calculation of the signals is based on Ramo's theorem. The efficient adjoint formulation of the induction solution is adjusted to doped materials, as for example the electric bias field and hence the motion of the charge cloud is changing with the doping level. The effect of the doping of the material on the signal shape is shown together with influences of different voltages and pixel geometries. Smaller pixels and higher bias voltages can lead to shorter signals which is preferable for high flux measurements. Possible count rate improvements are limited by electric break through, high dark current across the sensor layer and charge sharing. Another option to shorten the signals is the use of steering grid electrodes which modify the electric and the weighting field. This results in shorter signals and thus in a higher possible rate. The detailed Monte

Simulation of medical irradiation and X-ray detector signals

International Nuclear Information System (INIS)

Kreisler, Bjoern

2010-01-01

This thesis aims for an improved understanding of medical irradiation. Two major parts are investigated: the beam shaping components of a medical linear accelerator, i.e. the source of the radiation, and the signal generation inside semiconductor sensors, i.e. the detection of the radiation. The direct measurement of the spatial and spectral particle distribution in the irradiation beam is not possible with state of the art detectors due to the high particle flux. The development of new advanced detectors is the goal of the first part of this thesis. The focus is set on the signal generation inside the sensor volume of a semiconductor detector. Incoming particles interact with the sensor material and generate clouds of electron hole pairs. These pairs get separated by an applied bias voltage. The motion of the charge clouds is simulated with a finite element programme taking into account the drift and diffusion. Mirror charges are induced on the electrodes which move due to the motion of the charge cloud. The motion of the induced mirror charges leads to the signal that is detected. The transient calculation of the signals is based on Ramo's theorem. The efficient adjoint formulation of the induction solution is adjusted to doped materials, as for example the electric bias field and hence the motion of the charge cloud is changing with the doping level. The effect of the doping of the material on the signal shape is shown together with influences of different voltages and pixel geometries. Smaller pixels and higher bias voltages can lead to shorter signals which is preferable for high flux measurements. Possible count rate improvements are limited by electric break through, high dark current across the sensor layer and charge sharing. Another option to shorten the signals is the use of steering grid electrodes which modify the electric and the weighting field. This results in shorter signals and thus in a higher possible rate. The detailed Monte-Carlo simulation of

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

CERN Document Server

Fretwurst, E.; Stahl, J.; Pintilie, I.

2002-01-01

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising re...

A pixel segmented silicon strip detector for ultra fast shaping at low noise and low power consumption

International Nuclear Information System (INIS)

Misiakos, K.; Kavadias, S.

1996-01-01

A new radiation imaging device is proposed based on strips segmented into small pixels. Every pixel contains a submicron transistor that is normally biased in weak inversion. The ionization charge, upon collection by the pixel, changes the bias of the transistor to strong inversion and supplies a current up to several tens of a microA. This is a consequence of the small pixel capacitance (12 fF). The drains and sources of the transistors on the same row and column are shorted to bus lines that effectively become the Y and X coordinates. These bus lines are connected to the off chip ICON amplifiers to provide a 10 ns peaking time at a noise of about 150 electrons and 1 nW power consumption, for a 10x10 cm 2 detector and a MIP excitation. The noise performance is dominated by the ICON transistors. The cross talk between adjacent strips can be kept at a few percentage points provided a low transistor bias current is used

Large strip RPCs for the LEPS2 TOF system

Energy Technology Data Exchange (ETDEWEB)

Tomida, N., E-mail: natsuki@scphys.kyoto-u.ac.jp [Department of Physics, Kyoto University, Kyoto 606-8502 (Japan); Niiyama, M. [Department of Physics, Kyoto University, Kyoto 606-8502 (Japan); Ohnishi, H. [RIKEN (The Institute of Physical and Chemical Research), Wako, Saitama 351-0198 (Japan); Tran, N. [Research Center for Nuclear Physics (RCNP), Osaka University, Ibaraki, Osaka 567-0047 (Japan); Hsieh, C.-Y.; Chu, M.-L.; Chang, W.-C. [Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan (China); Chen, J.-Y. [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China)

2014-12-01

High time-resolution resistive plate chambers (RPCs) with large-size readout strips are developed for the time-of-flight (TOF) detector system of the LEPS2 experiment at SPring-8. The experimental requirement is a 50-ps time resolution for a strip size larger than 100 cm{sup 2}/channel. We are able to achieve 50-ps time resolutions with 2.5×100 cm{sup 2} strips by directly connecting the amplifiers to strips. With the same time resolution, the number of front-end electronics (FEE) is also reduced by signal addition. - Highlights: • Find a way to achieve a good time resolution with a large strip RPC. • 2.5 cm narrow strips have better resolutions than 5.0 cm ones. • The 0.5 mm narrow strip interval shows flat time resolutions between strips. • FEEs directly connected to strips make the signal reflection at the strip edge small. • A time resolution of 50 ps was achieved with 2.5 cm×100 cm strips.

Spectral CT of the extremities with a silicon strip photon counting detector

Science.gov (United States)

Sisniega, A.; Zbijewski, W.; Stayman, J. W.; Xu, J.; Taguchi, K.; Siewerdsen, J. H.

2015-03-01

Purpose: Photon counting x-ray detectors (PCXDs) are an important emerging technology for spectral imaging and material differentiation with numerous potential applications in diagnostic imaging. We report development of a Si-strip PCXD system originally developed for mammography with potential application to spectral CT of musculoskeletal extremities, including challenges associated with sparse sampling, spectral calibration, and optimization for higher energy x-ray beams. Methods: A bench-top CT system was developed incorporating a Si-strip PCXD, fixed anode x-ray source, and rotational and translational motions to execute complex acquisition trajectories. Trajectories involving rotation and translation combined with iterative reconstruction were investigated, including single and multiple axial scans and longitudinal helical scans. The system was calibrated to provide accurate spectral separation in dual-energy three-material decomposition of soft-tissue, bone, and iodine. Image quality and decomposition accuracy were assessed in experiments using a phantom with pairs of bone and iodine inserts (3, 5, 15 and 20 mm) and an anthropomorphic wrist. Results: The designed trajectories improved the sampling distribution from 56% minimum sampling of voxels to 75%. Use of iterative reconstruction (viz., penalized likelihood with edge preserving regularization) in combination with such trajectories resulted in a very low level of artifacts in images of the wrist. For large bone or iodine inserts (>5 mm diameter), the error in the estimated material concentration was errors of 20-40% were observed and motivate improved methods for spectral calibration and optimization of the edge-preserving regularizer. Conclusion: Use of PCXDs for three-material decomposition in joint imaging proved feasible through a combination of rotation-translation acquisition trajectories and iterative reconstruction with optimized regularization.

The Micro Wire Detector

International Nuclear Information System (INIS)

Adeva, B.; Gomez, F.; Pazos, A.; Pfau, R.; Plo, M.; Rodriguez, J.M.; Vazquez, P.; Labbe, J.C.

1999-01-01

We present the performance of a new proportional gas detector. Its geometry consists of a cathode plane with 70x70 μm 2 apertures, crossed by 25 μm anode strips to which it is attached by 50 μm kapton spacers. In the region where the avalanche takes place, the anode strips are suspended in the gas mixture as in a standard wire chamber. This detector exhibits high rate capability and large gains, introducing very little material. (author)

The Micro Wire Detector

Energy Technology Data Exchange (ETDEWEB)

Adeva, B.; Gomez, F.; Pazos, A.; Pfau, R.; Plo, M. E-mail: maximo.plo@cern.ch; Rodriguez, J.M.; Vazquez, P.; Labbe, J.C

1999-10-11

We present the performance of a new proportional gas detector. Its geometry consists of a cathode plane with 70x70 {mu}m{sup 2} apertures, crossed by 25 {mu}m anode strips to which it is attached by 50 {mu}m kapton spacers. In the region where the avalanche takes place, the anode strips are suspended in the gas mixture as in a standard wire chamber. This detector exhibits high rate capability and large gains, introducing very little material. (author)

Laboratory course on silicon strip detectors

International Nuclear Information System (INIS)

Montano, Luis M

2005-01-01

In this laboratory course we present an elementary introduction to the characteristics and applications of silicon detectors in High-Energy Physics, through performing some measurements which give an overview of the properties of these detectors as position resolution. The principles of operation are described in the activities the students have to develop together with some exercises to reinforce their knowledge on these devices

Self-Powered Neutron Detector Calibration Using a Large Vertical Irradiation Hole of HANARO

Directory of Open Access Journals (Sweden)

Kim Myong-Seop

2018-01-01

Full Text Available A calibration technology of the self-powered neutron detectors (SPNDs using a large vertical irradiation hole of HANARO is developed. The 40 Rh-SPNDs are installed on the polycarbonate plastic support, and the gold wires with the same length as the effective length of the rhodium emitter of the SPND are also installed to measure the neutron flux on the SPND. They are irradiated at a low reactor power, and the SPND current is measured using the pico-ammeter. The external gamma-rays which affect the SPND current response are analyzed using the Monte Carlo simulation for various irradiation conditions in HANARO. It is confirmed that the effect of the external gamma-rays to the SPND current is dependent on the reactor characteristics, and that it is affected by materials around the detector. The current signals due to the external gamma-rays can be either positive or negative, in that the net flow of the current may be either in the same or the opposite direction as the neutron-induced current by the rhodium emitter. From the above procedure, the effective calibration methodology of multiple SPNDs using the large hole of HANARO is developed. It could be useful for the calibration experiment of the neutron detectors in the research reactors.

Self-Powered Neutron Detector Calibration Using a Large Vertical Irradiation Hole of HANARO

Science.gov (United States)

Kim, Myong-Seop; Park, Byung-Gun; Kang, Gi-Doo

2018-01-01

A calibration technology of the self-powered neutron detectors (SPNDs) using a large vertical irradiation hole of HANARO is developed. The 40 Rh-SPNDs are installed on the polycarbonate plastic support, and the gold wires with the same length as the effective length of the rhodium emitter of the SPND are also installed to measure the neutron flux on the SPND. They are irradiated at a low reactor power, and the SPND current is measured using the pico-ammeter. The external gamma-rays which affect the SPND current response are analyzed using the Monte Carlo simulation for various irradiation conditions in HANARO. It is confirmed that the effect of the external gamma-rays to the SPND current is dependent on the reactor characteristics, and that it is affected by materials around the detector. The current signals due to the external gamma-rays can be either positive or negative, in that the net flow of the current may be either in the same or the opposite direction as the neutron-induced current by the rhodium emitter. From the above procedure, the effective calibration methodology of multiple SPNDs using the large hole of HANARO is developed. It could be useful for the calibration experiment of the neutron detectors in the research reactors.

A novel enhanced calibration method for DSSSD detectors

Energy Technology Data Exchange (ETDEWEB)

Kaya, Levent; Vogt, Andreas; Reiter, Peter; Birkenbach, Benedikt; Hirsch, Rouven; Seidlitz, Michael; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln (Germany)

2016-07-01

Double-sided silicon strip detectors (DSSSD) are employed for the detection of charged particles in low-energy nuclear physics providing position and energy information for the impinging particle. Intersecting areas of both p- and n-side strips form individual pixel segments allowing for a high detector granularity. However, due to limitation in fabrication and the response of readout electronics, the performance of different channels may vary. In order to achieve best energy information, a calibration of each p- and n-side strip with a very high precision is mandatory. DSSSD responses are analyzed employing energy correlation matrices between adjacent strips in order to determine charge-sharing and energy-loss effects. A novel calibration method is based on the fact that each event is registered simultaneously on the p- and n-side strips. A two-dimensional calibration procedure allows for a significant enhancement of the energy resolution. In this way, the performance of DSSSDs with position-dependent radiation damage is improved clearly by excluding locally damaged detector areas without losing the information of complete p- or n-side strips.

Developments, characterization and proton irradiation damage tests of AlN detectors for VUV solar observations

Energy Technology Data Exchange (ETDEWEB)

BenMoussa, A., E-mail: ali.benmoussa@stce.be [Solar Terrestrial Center of Excellence (STCE), Royal Observatory of Belgium, Circular Avenue 3, B-1180 Brussels (Belgium); Soltani, A.; Gerbedoen, J.-C [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), F-59652 Villeneuve d’Ascq (France); Saito, T. [Department of Environment and Energy, Tohoku Institute of Technology, 35-1, Yagiyama-Kasumi-cho, Taihaku-ku, Sendai, Miyagi 982-8577 (Japan); Averin, S. [Fryazino Branch of the Kotel’nikov Institute of Radioengineering and Electronics of Russian Academy of Sciences, 141190 Square Vvedenski 1, Fryazino, Moscow Region (Russian Federation); Gissot, S.; Giordanengo, B. [Solar Terrestrial Center of Excellence (STCE), Royal Observatory of Belgium, Circular Avenue 3, B-1180 Brussels (Belgium); Berger, G. [Catholic University of Louvain-la-Neuve, Chemin du Cyclotron 2, B-1348 Louvain la Neuve (Belgium); Kroth, U. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, D-10587 Berlin (Germany); De Jaeger, J.-C. [Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), F-59652 Villeneuve d’Ascq (France); Gottwald, A. [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, D-10587 Berlin (Germany)

2013-10-01

For next generation spaceborne solar ultraviolet radiometers, innovative metal–semiconductor–metal detectors based on wurtzite aluminum nitride are being developed and characterized. A set of measurement campaigns and proton irradiation damage tests was carried out to obtain their ultraviolet-to-visible characterization and degradation mechanisms. First results on large area prototypes up to 4.3 mm diameter are presented here. In the wavelength range of interest, this detector is reasonably sensitive and stable under brief irradiation with a negligible low dark current (3–6 pA/cm{sup 2}). No significant degradation of the detector performance was observed after exposure to protons of 14.4 MeV energy, showing a good radiation tolerance up to fluences of 1 × 10{sup 11} protons/cm{sup 2}.

Beam Test Results for Single- and Double-Sided Silicon Detector Prototypes of the CMS Central Detector

CERN Document Server

Adriani, O

1997-01-01

We report the results of two beam tests performed in July and September 1995 at CERN using silicon microstrip detectors of various types: single sided, double sided with small angle stereo strips, double sided with orthogonal strips, double sided with pads. For the read-out electronics use was made of Preshape32, Premux128 and VA1 chips. The signal to noise ratio and the resolution of the detectors was studied for different incident angles of the incoming particles and for different values of the detector bias voltage. The goal of these tests was to check and improve the performances of the prototypes for the CMS Central Detector.

Measurement of charge collection in irradiated miniature sensors for the upgrade of ATLAS Phase-II Strip tracker

CERN Document Server

Cindro, Vladimir; The ATLAS collaboration

2018-01-01

Miniature sensors with outer dimension of 10 mm x 10 mm were produced together with full size sensors for the innermost ring (R0) of the end-cap part in the upgraded ATLAS inner tracker (ITk). AC and DC coupled n-type strips with three different pitches (wide, default and narrow) were processed on high resistivity p-type FZ silicon substrates by Hamamatsu Photonics. Miniature sensors were irradiated with 70 MeV protons at CYRIC at Tohoku University (Japan) and reactor neutrons at Jožef Stefan Institute (Slovenia) to three different 1 MeV neutron equivalent fluences: 0.5, 1 and 2 x 1015 neqcm-2. The upper fluence range exceeds the highest anticipated in the inner-most part of the ATLAS ITk-Strips over the HL-LHC lifetime (~1.25 x 1015 neqcm2). Charge collection in test sensors has been evaluated systematically using 90Sr β- source and Alibava analogue readout system at reverse bias voltages up to 1000 V.

Measurement of charge collection in irradiated miniature sensors for the upgrade of ATLAS Phase-II Strip tracker

CERN Document Server

Cindro, Vladimir; The ATLAS collaboration

2017-01-01

Miniature sensors with outer dimension of 10 mm x 10 mm have been produced together with full size sensors for the innermost ring (R0) of the end-cap part in the upgraded ATLAS inner tracker (ITk). AC and DC coupled n-type strips with three different pitches (wide, default and narrow) were processed on high resistivity p-type FZ silicon substrates by Hamamatsu Photonics. Miniature sensors were irradiated with 70 MeV protons at CYRIC at Tohoku University (Japan) and reactor neutrons at Jožef Stefan Institute (Slovenia) to three different 1 MeV neutron equivalent fluences: 0.5, 1 and 2 x 1015 neqcm-2. The upper fluence range exceeds the highest anticipated in the inner-most part of the ATLAS ITk-Strips over the HL-LHC lifetime (~1.5 x 1015 neqcm2). Charge collection in test sensors has been evaluated systematically using 90Sr β-source and Alibava analogue readout system at reverse bias voltages up to 1000 V.

Technology developments and first measurements of Low Gain Avalanche Detectors (LGAD) for high energy physics applications

International Nuclear Information System (INIS)

Pellegrini, G.; Fernández-Martínez, P.; Baselga, M.; Fleta, C.; Flores, D.; Greco, V; Hidalgo, S.; Mandić, I.; Kramberger, G.; Quirion, D.; Ullan, M.

2014-01-01

This paper introduces a new concept of silicon radiation detector with intrinsic multiplication of the charge, called Low Gain Avalanche Detector (LGAD). These new devices are based on the standard Avalanche Photo Diodes (APD) normally used for optical and X-ray detection applications. The main differences to standard APD detectors are the low gain requested to detect high energy charged particles, and the possibility to have fine segmentation pitches: this allows fabrication of microstrip or pixel devices which do not suffer from the limitations normally found [1] in avalanche detectors. In addition, a moderate multiplication value will allow the fabrication of thinner devices with the same output signal of standard thick substrates. The investigation of these detectors provides important indications on the ability of such modified electrode geometry to control and optimize the charge multiplication effect, in order to fully recover the collection efficiency of heavily irradiated silicon detectors, at reasonable bias voltage, compatible with the voltage feed limitation of the CERN High Luminosity Large Hadron Collider (HL-LHC) experiments [2]. For instance, the inner most pixel detector layers of the ATLAS tracker will be exposed to fluences up to 2×10 16 1 MeV n eq /cm 2 , while for the inner strip detector region fluences of 1×10 15 n eq /cm 2 are expected. The gain implemented in the non-irradiated devices must retain some effect also after irradiation, with a higher multiplication factor with respect to standard structures, in order to be used in harsh environments such those expected at collider experiments

The use of a silicon strip detector dose magnifying glass in stereotactic radiotherapy QA and dosimetry.

Science.gov (United States)

Wong, J H D; Knittel, T; Downes, S; Carolan, M; Lerch, M L F; Petasecca, M; Perevertaylo, V L; Metcalfe, P; Jackson, M; Rosenfeld, A B

2011-03-01

Stereotactic radiosurgery/therapy (SRS/SRT) is the use of radiation ablation in place of conventional surgical excision to remove or create fibrous tissue in small target volumes. The target of the SRT/SRS treatment is often located in close proximity to critical organs, hence the requirement of high geometric precision including a tight margin on the planning target volume and a sharp dose fall off. One of the major problems with quality assurance (QA) of SRT/SRS is the availability of suitable detectors with the required spatial resolution. The authors present a novel detector that they refer to as the dose magnifying glass (DMG), which has a high spatial resolution (0.2 mm) and is capable of meeting the stringent requirements of QA and dosimetry in SRS/SRT therapy. The DMG is an array of 128 phosphor implanted n+ strips on a p-type Si wafer. The sensitive area defined by a single n+ strip is 20 x 2000 microm2. The Si wafer is 375 microm thick. It is mounted on a 0.12 mm thick Kapton substrate. The authors studied the dose per pulse (dpp) and angular response of the detector in a custom-made SRS phantom. The DMG was used to determine the centers of rotation and positioning errors for the linear accelerator's gantry, couch, and collimator rotations. They also used the DMG to measure the profiles and the total scatter factor (S(cp)) of the SRS cones. Comparisons were made with the EBT2 film and standard S(cp) values. The DMG was also used for dosimetric verification of a typical SRS treatment with various noncoplanar fields and arc treatments when applied to the phantom. The dose per pulse dependency of the DMG was found to be DMG and EBT2 measurements for a simulated SRS treatment shows a maximum difference of 2.5%. The DMG was investigated for dose per pulse and angular dependency. Its application to SRS/SRT delivery verification was demonstrated. The DMG with its high spatial resolution and real time capability allows measurement of dose profiles for cone

3D detectors at ITC-irst: first irradiation studies

International Nuclear Information System (INIS)

Ronchin, S.; Boscardin, M.; Bosisio, L.; Cindro, V.; Dalla Betta, G.-F.; Piemonte, C.; Pozza, A.; Zoboli, A.; Zorzi, N.

2007-01-01

In the past two years, we have developed 3D detector technologies at ITC-irst (Trento, Italy). We have proposed a new 3D architecture, having columnar electrodes of one doping type only, allowing for a simplified fabrication process. In this paper, we report on preliminary results from the electrical characterization of devices irradiated with neutrons, showing that low depletion voltage values can be achieved even after very large fluences

Implementation of a Large Scale Control System for a High-Energy Physics Detector: The CMS Silicon Strip Tracker

CERN Document Server

Masetti, Lorenzo; Fischer, Peter

2011-01-01

Control systems for modern High-Energy Physics (HEP) detectors are large distributed software systems managing a significant data volume and implementing complex operational procedures. The control software for the LHC experiments at CERN is built on top of a commercial software used in industrial automation. However, HEP specific requirements call for extended functionalities. This thesis focuses on the design and implementation of the control system for the CMS Silicon Strip Tracker but presents some general strategies that have been applied in other contexts. Specific design solutions are developed to ensure acceptable response times and to provide the operator with an effective summary of the status of the devices. Detector safety is guaranteed by proper configuration of independent hardware systems. A software protection mechanism is used to avoid the widespread intervention of the hardware safety and to inhibit dangerous commands. A wizard approach allows non expert operators to recover error situations...

Web-Based Cathode Strip Chamber Data Display

CERN Multimedia

Firmansyah, M

2013-01-01

Cathode Strip Chamber (CSC) is a detector that uses gas and high electric field to detect particles. When a particle goes through CSC, it will ionize gas particles and generate electric signal in the anode and cathode of the detector. Analysis of the electric signal data can help physicists to reconstruct path of the particles and determine what happen inside the detector. Using data display, analysis of CSC data becomes easier. One can determine which data is interesting, unusual, or maybe only contain noise.\

ATLAS SemiConductor Tracker and Pixel Detector: Status and Performance

CERN Document Server

Reeves, K; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) and the Pixel Detector are the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is a silicon strip detector and is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. The Pixel Detector consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In the talk the current status of the SCT and Pixel Detector will be reviewed. We will report on the operation of the detectors including an overview of the issues we encountered and the observation of significant increases in leakage currents (as expected) from bulk ...

Scanning of irradiated silicon detectors using $\\alpha$ particles and low energy protons

CERN Document Server

Casse, G L; Glaser, M; Kohout, Z; Konícek, J; Lemeilleur, F; Leroy, C; Linhart, V; Mares, J J; Pospísil, S; Roy, P; Sopko, B; Sinor, M; Svejda, J; Vorobel, V; Wilhelm, I

1999-01-01

In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5~MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection efficiency was determined as a function of fluence

New Position Algorithms for the 3-D CZT Drift Detector

Science.gov (United States)

Budtz-Jørgensen, C.; Kuvvetli, I.

2017-06-01

The 3-D position sensitive CZT detector for high-energy astrophysics developed at DTU has been investigated with a digitizer readout system. The 3-D CZT detector is based on the CZT drift-strip detector principle and was fabricated using a REDLEN CZT crystal (20 mm × 20 mm × 5 mm). The detector contains 12 drift cells, each comprising one collecting anode strip with four drift strips, biased such that the electrons are focused and collected by the anode strips. Three-dimensional position determination is achieved using the anode strip signals, the drift-strip signals, and the signals from ten cathode strips. For the characterization work, we used a DAQ system with a 16 channels 250-MHz 14-b digitizer, SIS3316. It allowed us to analyze the pulse shapes of the signals from four detector cells at a time. The 3-D CZT setup was characterized with a finely collimated radioactive source of 137Cs at 662 keV. The analysis required development of novel position determination algorithms which are the subject of this paper. Using the digitizer readout, we demonstrate improved position determination compared to the previous read out system based on analog electronics. Position resolutions of 0.4-mm full width at half maximum (FWHM) in the x-, y-, and z-directions were achieved and the energy resolution was 7.2-keV FWHM at 662 keV. The timing information allows identification of multiple interaction events within one detector cell, e.g., Compton scattering followed by photoelectric absorption. These characteristics are very important for a high-energy spectral-imager suitable for use in advanced Compton telescopes, or as focal detector for new hard X-ray and soft γ-ray focusing telescopes or in polarimeter instrumentation. CZT detectors are attractive for these applications since they offer relatively high-quantum efficiency. From a technical point of view it is advantageous that their cooling requirements are modest.

Microcalcification detectability using a bench-top prototype photon-counting breast CT based on a Si strip detector.

Science.gov (United States)

Cho, Hyo-Min; Ding, Huanjun; Barber, William C; Iwanczyk, Jan S; Molloi, Sabee

2015-07-01

To investigate the feasibility of detecting breast microcalcification (μCa) with a dedicated breast computed tomography (CT) system based on energy-resolved photon-counting silicon (Si) strip detectors. The proposed photon-counting breast CT system and a bench-top prototype photon-counting breast CT system were simulated using a simulation package written in matlab to determine the smallest detectable μCa. A 14 cm diameter cylindrical phantom made of breast tissue with 20% glandularity was used to simulate an average-sized breast. Five different size groups of calcium carbonate grains, from 100 to 180 μm in diameter, were simulated inside of the cylindrical phantom. The images were acquired with a mean glandular dose (MGD) in the range of 0.7-8 mGy. A total of 400 images was used to perform a reader study. Another simulation study was performed using a 1.6 cm diameter cylindrical phantom to validate the experimental results from a bench-top prototype breast CT system. In the experimental study, a bench-top prototype CT system was constructed using a tungsten anode x-ray source and a single line 256-pixels Si strip photon-counting detector with a pixel pitch of 100 μm. Calcium carbonate grains, with diameter in the range of 105-215 μm, were embedded in a cylindrical plastic resin phantom to simulate μCas. The physical phantoms were imaged at 65 kVp with an entrance exposure in the range of 0.6-8 mGy. A total of 500 images was used to perform another reader study. The images were displayed in random order to three blinded observers, who were asked to give a 4-point confidence rating on each image regarding the presence of μCa. The μCa detectability for each image was evaluated by using the average area under the receiver operating characteristic curve (AUC) across the readers. The simulation results using a 14 cm diameter breast phantom showed that the proposed photon-counting breast CT system can achieve high detection accuracy with an average AUC greater

Study of the physical processes involved in the operating mode of the micro-strips gas detector Micromegas; Analyse des phenomenes physiques lies au fonctionnement du detecteur gazeux a micropistes micromegas

Energy Technology Data Exchange (ETDEWEB)

Barouch, G

2001-04-01

Micromegas is a micro-strip gaseous detector invented in 1996. It consists of two volumes of gas separated by a micro-mesh. The first volume of gas, 3 mm thick, is used to liberate ionization electrons from the incident charged particle. In the second volume, only 100 {mu}m thick, an avalanche phenomenon amplifies the electrons produced in the first volume. Strips printed on an insulating substrate collect the electrons from the avalanche. The geometrical configuration of Micromegas showed many advantages. The short anode-cathode distance combined with a high granularity provide high rate capabilities due to a fast collection of ions produced during the avalanche development. Moreover, the possibility to localize the avalanche with strips printed about every hundreds of micrometers allows to measure the position of the incident particle with a good resolution. In this work, experimental tests of Micromegas are presented along with detailed Monte Carlo simulations used to understand and optimize the detector's performances. The prototypes were tested several times at the PS accelerator at CERN. The analysis of the date showed a stable and efficient behavior of Micromegas combined with an excellent space resolution. In fact, spatial resolutions of less than 15 {mu}m were obtained. In parallel with the in-beam tests, several simulations have been developed in order to gain a better understanding of the detector's response. (author)

Strip Ionization Chamber as Beam Monitor in the Proton Therapy Eye Treatment

Science.gov (United States)

Marchetto, F.; Cirio, R.; Garella, M. A.; Giordanengo, S.; Boriano, A.; Givehchi, N.; La Rosa, A.; Peroni, C.; Donetti, M.; Bourhaleb, F.; Pitta', G.; Cirrone, G. A. P.; Cuttone, G.; Raffaele, L.; Sabini, M. G.; Valastro, L.

2006-04-01

Since spring 2002, ocular pathologies have been treated in Catania at the Centro di AdroTerapia e Applicazioni Nucleari Avanzate (CATANA) within a collaboration between INFN Laboratori Nazionali del Sud (LNS), Physics Department, Ophthalmology Institute, Radiology Institute of the Catania University and CSFNSM Catania. A beam line from a 62 MeV Superconducting Cyclotron is used to treat shallow tumors. The beam is conformed to the tumor shape with a passive delivery system. A detector system has been developed in collaboration with INFN-Torino to be used as real time beam monitor. The detector, placed upstream of the patient collimator, consists of two parallel plate ionization chambers with the anode segmented in strips. Each anode is made of 0.5 mm-wide 256 strips corresponding to (12.8 × 12.8) cm2 sensitive area. With the two strip ionization chambers one can measure the relevant beam parameters during treatment to probe both asymmetry and flatness. In the test carried out at CATANA the detector has been used under different and extreme beam conditions. Preliminary results are given for profiles and skewness, together with a comparison with reference detectors.

Neutron irradiation effects on silicon detectors structure, electrical and mechanical characteristics

International Nuclear Information System (INIS)

Rabinovich, E.; Golan, G.; Axelevich, A.; Inberg, A.; Oksman, M.; Rosenwaks, I.; Lubarsky, G.; Seidman, A.; Croitoru, N.; Rancoita, P.G.; Rattaggi, M.

1999-01-01

Neutron irradiation effects on (p-n) and Schottky-junction silicon detectors were studied. It was shown that neutron interactions with monocrystalline silicon create specific types of microstructure defects with morphology differing according to the level of neutron fluences (Φ). The isolated dislocation loops, formed by interstitial atoms were observed in microstructure images for 10 10 ≤ Φ ≤ 10 12 n/cm 2 . A strong change in the dislocation loops density and a cluster formation was observed for Φ ≥ 10 13 n/cm 2 . A drastic silicon damage was found for fluences over 10 14 n/cm 2 . These fluences created zones enriched with all types of dislocations, covering more than 50 % of the total surface area. A mechanical fragility appeared in that fluence range in a form of microcracks. 10 14 n/cm 2 appears to be a critical value of neutron irradiation because of the radiation damage described above and because the characteristics I f -V f of silicon detectors can be differentiated from those obtained at low fluences. (A.C.)

The results of the irradiations of microstrip detectors for the ATLAS tracker (SCT)

International Nuclear Information System (INIS)

Dervan, P.J.

2003-01-01

The SemiConductor Tracker (SCT) of ATLAS will operate in the Large Hadron Collider (LHC) at CERN, which will reach luminosities of 10 34 cm 2 s -1 . Silicon single-sided microstrip detectors will be used for particle tracking. Due to the proximity to the beam, the silicon detectors need to withstand damage from ionising radiation (10 Mrad total dose) and from non-ionising radiation such as neutrons (2x10 14 1 MeV equivalent neutrons/cm 2 total fluence). The final characteristics of the silicon SCT detectors which are needed to operate under LHC conditions and the conclusions reached after various years of test irradiation studies will be reported. The integration and performance of these detectors in complete SCT modules is also discussed

Operational issues of present ATLAS strip detector

CERN Document Server

Yacoob, S; The ATLAS collaboration

2013-01-01

Current results from the successful operation of the Semi-Conductor Tracker (SCT) Detector at the LHC and its status after three years of operation is presented. This note reports on the operation of the detector including an overview of the issues we encountered and the observation of significant increases in leakage currents from bulk damage due to non-ionising radiation, there have been a small number of significant changes effecting detector operation since the contribution to the previous conference in the series [1]. The main emphasis is given to the tracking performance of the SCT and the data quality during the many months of data-taking (the LHC delivered 47 pb

Study of the response of a silicon detector irradiated with 1 MeV neutrons; Etude de la reponse d`un detecteur Si irradie par des neutrons de 1 MeV

Energy Technology Data Exchange (ETDEWEB)

Roy, P [Montreal Univ., PQ (Canada). Lab. de Physique Nucleaire

1994-12-31

The author studied the response of an n-type silicon detector irradiated with 1 MeV neutrons at fluences ranging from 0.26x10{sup 13} to 11.19x10{sup 13} neutrons/cm{sup 2}. The response of the irradiated detector to {sup 241}Am alpha particles was measured. 13 refs., 7 figs.

CVD diamond sensors for charged particle detection

CERN Document Server

Krammer, Manfred; Berdermann, E; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dencuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zöller, M

2001-01-01

CVD diamond material was used to build position-sensitive detectors for single-charged particles to be employed in high-intensity physics experiments. To obtain position information, metal contacts shaped as strips or pixels are applied to the detector surface for one- or two- dimensional coordinate measurement. Strip detectors 2*4 cm/sup 2/ in size with a strip distance of 50 mu m were tested. Pixel detectors of various pixel sizes were bump bonded to electronics chips and investigated. A key issue for the use of these sensors in high intensity experiments is the radiation hardness. Several irradiation experiments were carried out with pions, protons and neutrons exceeding a fluence of 10/sup 15/ particles/cm/sup 2/. The paper presents an overview of the results obtained with strip and pixel detectors in high-energy test beams and summarises the irradiation studies. (8 refs).

Photovoltaic radiation detector element

International Nuclear Information System (INIS)

Agouridis, D.C.

1980-01-01

A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein in the edge of which closely approaches but is spaced from the current collector strips

The use of a silicon strip detector dose magnifying glass in stereotactic radiotherapy QA and dosimetry

International Nuclear Information System (INIS)

Wong, J. H. D.; Knittel, T.; Downes, S.; Carolan, M.; Lerch, M. L. F.; Petasecca, M.; Perevertaylo, V. L.; Metcalfe, P.; Jackson, M.; Rosenfeld, A. B.

2011-01-01

Purpose: Stereotactic radiosurgery/therapy (SRS/SRT) is the use of radiation ablation in place of conventional surgical excision to remove or create fibrous tissue in small target volumes. The target of the SRT/SRS treatment is often located in close proximity to critical organs, hence the requirement of high geometric precision including a tight margin on the planning target volume and a sharp dose fall off. One of the major problems with quality assurance (QA) of SRT/SRS is the availability of suitable detectors with the required spatial resolution. The authors present a novel detector that they refer to as the dose magnifying glass (DMG), which has a high spatial resolution (0.2 mm) and is capable of meeting the stringent requirements of QA and dosimetry in SRS/SRT therapy. Methods: The DMG is an array of 128 phosphor implanted n + strips on a p-type Si wafer. The sensitive area defined by a single n + strip is 20x2000 μm 2 . The Si wafer is 375 μm thick. It is mounted on a 0.12 mm thick Kapton substrate. The authors studied the dose per pulse (dpp) and angular response of the detector in a custom-made SRS phantom. The DMG was used to determine the centers of rotation and positioning errors for the linear accelerator's gantry, couch, and collimator rotations. They also used the DMG to measure the profiles and the total scatter factor (S cp ) of the SRS cones. Comparisons were made with the EBT2 film and standard S cp values. The DMG was also used for dosimetric verification of a typical SRS treatment with various noncoplanar fields and arc treatments when applied to the phantom. Results: The dose per pulse dependency of the DMG was found to be cp agrees very well with the standard data with an average difference of 1.2±1.1%. Comparison of the relative intensity profiles of the DMG and EBT2 measurements for a simulated SRS treatment shows a maximum difference of 2.5%. Conclusions: The DMG was investigated for dose per pulse and angular dependency. Its

A 3D CZT high resolution detector for x- and gamma-ray astronomy

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Zappettini, A.

2014-01-01

At DTU Space we have developed a high resolution three dimensional (3D) position sensitive CZT detector for high energy astronomy. The design of the 3D CZT detector is based on the CZT Drift Strip detector principle. The position determination perpendicular to the anode strips is performed using...

Data acquisition software for the CMS strip tracker

International Nuclear Information System (INIS)

Bainbridge, R; Cripps, N; Fulcher, J; Radicci, V; Wingham, M; Baulieu, G; Bel, S; Delaere, C; Drouhin, F; Gill, K; Mirabito, L; Cole, J; Jesus, A C A; Giassi, A; Giordano, D; Gross, L; Hahn, K; Mersi, S; Nikolic, M; Tkaczyk, S

2008-01-01

The CMS silicon strip tracker, providing a sensitive area of approximately 200 m 2 and comprising 10 million readout channels, has recently been completed at the tracker integration facility at CERN. The strip tracker community is currently working to develop and integrate the online and offline software frameworks, known as XDAQ and CMSSW respectively, for the purposes of data acquisition and detector commissioning and monitoring. Recent developments have seen the integration of many new services and tools within the online data acquisition system, such as event building, online distributed analysis, an online monitoring framework, and data storage management. We review the various software components that comprise the strip tracker data acquisition system, the software architectures used for stand-alone and global data-taking modes. Our experiences in commissioning and operating one of the largest ever silicon micro-strip tracking systems are also reviewed

Short p-type silicon microstrip detectors in 3D-stc technology

Energy Technology Data Exchange (ETDEWEB)

Eckert, S. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany)], E-mail: simon.eckert@physik.uni-freiburg.de; Jakobs, K.; Kuehn, S.; Parzefall, U. [Physikalisches Institut, Albert-Ludwigs-Universitaet Freiburg, Hermann-Herder Strasse 3b, D-79104 Freiburg i. Br. (Germany); Dalla-Betta, G.-F.; Zoboli, A. [Dipartimento di Ingegneria e Scienza dell' Informazione, Universita degli Studi di Trento, via Sommarive 14, I-38050 Povo di Trento (Italy); Pozza, A.; Zorzi, N. [FBK-irst Trento, Microsystems Division, via Sommarive 18, I-38050 Povo di Trento (Italy)

2008-10-21

The luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, will constitute an extremely challenging radiation environment for tracking detectors. Significant improvements in radiation hardness are needed to cope with the increased radiation dose, requiring new tracking detectors. In the upgraded ATLAS detector the region from 20 to 50 cm distance to the beam will be covered by silicon strip detectors (SSD) with short strips. These will have to withstand a 1 MeV neutron equivalent fluence of about 1x10{sup 15}n{sub eq}/cm{sup 2}, hence extreme radiation resistance is necessary. For the short strips, we propose to use SSD realised in the radiation tolerant 3D technology, where rows of columns-etched into the silicon bulk-are joined together to form strips. To demonstrate the feasibility of 3D SSD for the sLHC, we have built prototype modules using 3D-single-type-column (stc) SSD with short strips and front-end electronics from the present ATLAS SCT. The modules were read out with the SCT Data Acquisition system and tested with an IR-laser. We report on the performance of these 3D modules, in particular the noise at 40 MHz which constitutes a measurement of the effective detector capacitance. Conclusions about options for using 3D SSD detectors for tracking at the sLHC are drawn.

Status of fully integrated GaAs particle detectors

International Nuclear Information System (INIS)

Braunschweig, W.; Breibach, J.; Kubicki, Th.; Luebelsmeyer, K.; Maesing, Th.; Rente, C.; Roeper, Ch.; Siemes, A.

1999-01-01

GaAs strip detectors are of interest because of their radiation hardness at room temperature and the high absorption coefficient of GaAs for x-rays. The detectors currently under development will be used in the VLQ-experiment at the H1 experiment at the HERA collider. This will be the first high energy physics experiment where GaAs detectors will be used. The detectors have a sensitive area of 5 x 4 cm with a pitch of 62 μ m. Due to the high density of channels the biasing resistors and coupling capacitors are integrated. For the resistors a resistive layer made of Cermet is used. The properties of the first fully integrated strip detector are presented

Studies for the Commissioning of the CERN CMS Silicon Strip Tracker

CERN Document Server

Bloch, Christoph; Abbaneo, Duccio; Fabjan, Christian Wolfgang

2008-01-01

In 2008 the Large Hadron Collider (LHC) at CERN will start producing proton-proton collisions of unprecedented energy. One of its main experiments is the Compact Muon Solenoid (CMS), a general purpose detector, optimized for the search of the Higgs boson and super symmetric particles. The discovery potential of the CMS detector relies on a high precision tracking system, made of a pixel detector and the largest silicon strip Tracker ever built. In order to operate successfully a device as complex as the CMS silicon strip Tracker, and to fully exploit its potential, the properties of the hardware need to be characterized as precisely as possible, and the reconstruction software needs to be commissioned with physics signals. A number of issues were identified and studied to commission the detector, some of which concern the entire Tracker, while some are specific to the Tracker Outer Barrel (TOB): - the time evolution of the signals in the readout electronics need to be precisely measured and correctly simulate...

An Efficient, FPGA-Based, Cluster Detection Algorithm Implementation for a Strip Detector Readout System in a Time Projection Chamber Polarimeter

Science.gov (United States)

Gregory, Kyle J.; Hill, Joanne E. (Editor); Black, J. Kevin; Baumgartner, Wayne H.; Jahoda, Keith

2016-01-01

A fundamental challenge in a spaceborne application of a gas-based Time Projection Chamber (TPC) for observation of X-ray polarization is handling the large amount of data collected. The TPC polarimeter described uses the APV-25 Application Specific Integrated Circuit (ASIC) to readout a strip detector. Two dimensional photoelectron track images are created with a time projection technique and used to determine the polarization of the incident X-rays. The detector produces a 128x30 pixel image per photon interaction with each pixel registering 12 bits of collected charge. This creates challenging requirements for data storage and downlink bandwidth with only a modest incidence of photons and can have a significant impact on the overall mission cost. An approach is described for locating and isolating the photoelectron track within the detector image, yielding a much smaller data product, typically between 8x8 pixels and 20x20 pixels. This approach is implemented using a Microsemi RT-ProASIC3-3000 Field-Programmable Gate Array (FPGA), clocked at 20 MHz and utilizing 10.7k logic gates (14% of FPGA), 20 Block RAMs (17% of FPGA), and no external RAM. Results will be presented, demonstrating successful photoelectron track cluster detection with minimal impact to detector dead-time.

Development of Diamond Tracking Detectors for High Luminosity Experiments at the LHC

CERN Multimedia

Kerbikov, B; Cumalat, J P; Mandic, I; Kagan, H P; Grigoriev, E; Mikuz, M; Oh, A; Martemiyanov, A; Golubev, A; Gorisek, A; Seidel, S C; Eusebi, R

2002-01-01

\\\\ \\\\% RD42 \\\\ \\\\Diamond, grown in a chemical vapour deposition process, can be used as a particle detector. The RD42 collaboration investigates its application in experiments at the Large Hadron Collider for particle tracking very close to the interaction region. Diamond is known to be radiation hard, in particular to photons and electrons up to at least 100 MRad. Irradiations with pions, protons and neutrons at room temperature show that diamond can resist higher fluences than silicon devices. An irradiation with 24 GeV/c protons on diamond samples shows no degradation up to fluences of 1 x 10$^{15} \\emph{p}$/cm$^{2}$ and a decrease in signal of only 40\\% at 5 x 10$^{15} \\emph{p}$/cm$^{2}$.\\\\ \\\\The signal response to a minimum ionizing particle in the best diamond samples is 9000 electon-hole-pairs which corresponds to a charge collection distance of 250 $\\mu$m.\\\\ \\\\Diamond strip detectors with sizes from 1 x 1 cm$^{2}$ to 2 x 4 cm$^{2}$ are routinely tested in particle beams using low noise VA readout elec...

The performance of silicon detectors for the SiliPET project: A small animal PET scanner based on stacks of silicon detectors

International Nuclear Information System (INIS)

Auricchio, Natalia; Domenico, Giovanni di; Zavattini, Guido; Milano, Luciano; Malaguti, Roberto

2011-01-01

We propose a new scanner for small animal Positron Emission Tomography (PET) based on stacks of double sided silicon detectors. Each stack is made of 40 planar detectors with dimension 60x60x1 mm 3 and 128 orthogonal strips on both sides to read the two coordinates of interaction, the third being the detector number in the stack. Multiple interactions in a stack are discarded by an exclusive OR applied between each detector plane of a stack. In this way we achieve a precise determination of the interaction point of the two 511 keV photons. The reduced dimensions of the scanner also improve the solid angle coverage resulting in a high sensitivity. Preliminary results were obtained with MEGA prototype tracker (11 double sided Si detector layers), divided into two stacks 2 cm apart made of, respectively, 5 and 6 prototype layers, placing a small spherical 22 Na source in different positions. We report on the results, spatial resolution, imaging and timing performances obtained with double sided silicon detectors, manufactured by ITC-FBK, having an active area of 3x3 cm 2 , thickness of 1 mm and a strip pitch of 500μm. Two different strip widths of 300 and 200μm equipped with 64 orthogonal p and n strips on opposite sides were read out with the VATAGP2.5 ASIC, a 128-channel 'general purpose' charge sensitive amplifier.

GaAs strip detectors: the Australian production program

International Nuclear Information System (INIS)

Butcher, K.S.A.; Alexiev, D.

1995-01-01

The Australian High Energy Physics consortium (composed of the University of Melbourne, the University of Sydney and ANSTO) has been investigating the possibility of producing a large area wheel of SI GaAs detectors for the ATLAS detector array. To help assess the extent of Australia's role in this venture a few SI GaAs microstrip detectors are to be manufactured under contract by the CSIRO division of Radiophysics GaAs IC Prototyping Facility. The planned production of the devices is discussed. First, the reasons for producing the detectors here in Australia are examined, then some basic characteristics of the material are considered, and finally details are provided of the design used for the manufacture of the devices. Two sets of detectors will be produced using the standard Glasgow production recipe; SIGaAs and GaN. The Glasgow mask set is being used as a benchmark against which to compare the Australian devices

The influence of fast neutron irradiation on the noise properties of silicon surface-barrier detectors

International Nuclear Information System (INIS)

Dabrowski, W.; Korbel, K.

1988-01-01

The susceptibility to the fast neutron irradiation of silicon surface-barrier detectors has been investigated. It was shown that the 1/f-noise decreases substantially with increasing fluence in the range from 10 10 n/cm 2 to 10 11 n/cm 2 . The deterioration of the detector performance is caused mainly by the positively-charged defects induced by the radiation. The critical value of the neutron fluence, at which the detector performance begins to be worsened was also determined. 5 refs., 5 figs. (author)

Study the radiation damage effects in Si microstrip detectors for future HEP experiments

International Nuclear Information System (INIS)

Lalwani, Kavita; Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh

2016-01-01

Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

Study the radiation damage effects in Si microstrip detectors for future HEP experiments

Energy Technology Data Exchange (ETDEWEB)

Lalwani, Kavita, E-mail: kavita.phy@mnit.ac.in [Malaviya National Institute of Technology (MNIT) Jaipur, Jaipur-302017 (India); Jain, Geetika; Dalal, Ranjeet; Ranjan, Kirti; Bhardwaj, Ashutosh [University of Delhi (DU), Delhi-110007 (India)

2016-07-15

Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

Characterization of 150 $\\mu$m thick epitaxial silicon detectors from different producers after proton irradiation

CERN Document Server

Hoedlmoser, H; Haerkoenen, J; Kronberger, M; Trummer, J; Rodeghiero, P

2007-01-01

Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150 mm thick EPI silicon diodes irradiated with 24GeV=c protons up to a fluence of 3 1015 p=cm2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV=IV characterizations. The aim of the work was to investigate the impact of radiation damage as well as the influence of the wafer processing on the material performance by comparing diodes from different manufacturers. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. While the generation of leakage current due to irradiation is similar in all investigated series of detectors, a difference in the effective doping concentration can be observed after irradiation. In the CCE measurements an anomalous drop in performance was found even for diodes exposed to ...

Combined effect of bulk and surface damage on strip insulation properties of proton irradiated n$^{+}$-p silicon strip sensors

CERN Document Server

Dalal, R; Ranjan, K; Moll, M; Elliott-Peisert, A

2014-01-01

Silicon sensors in next generation hadron colliders willface a tremendously harsh radiation environment. Requirement tostudy rarest reaction channels with statistical constraints hasresulted in a huge increment in radiation flux, resulting in bothsurface damage and bulk damage. For sensors which are used in acharged hadron environment, both of these degrading processes takeplace simultaneously. Recently it has been observed in protonirradiated n$^{+}$-p Si strip sensors that n$^{+}$ strips had a goodinter-strip insulation with low values of p-spray and p-stop dopingdensities which is contrary to the expected behaviour from thecurrent understanding of radiation damage. In this work a simulationmodel has been devised incorporating radiation damage to understandand provide a possible explanation to the observed behaviour ofirradiated sensors.

Characterization of hybrid self-powered neutron detector under neutron irradiation

CERN Document Server

Nakamichi, M; Yamamura, C; Nakazawa, M; Kawamura, H

2000-01-01

To evaluate the irradiation behaviour of a blanket mock-up on in-pile functional test, it is necessary to measure the neutron flux change in the in-pile mock-up by a neutron detector, such as the self-powered neutron detector (SPND). With its small-sized emitter, which has high sensitivity and fast response time, SPND is an indispensable tool in order to measure the local neutron flux change. In the case of an in-pile functional test, it is necessary that response time is less than 1s and ratio of SPND output current is more than 0.3 of output current of SPND with Rh emitter. Therefore, a hybrid SPND with high sensitivity and fast response time was developed. This hybrid SPND used a hybrid emitter, i.e. Co cladded Pt-13%Rh.

Thermal Module Tests with Irradiated 070 Detectors.

CERN Document Server

HOWCROFT, C L F

1998-01-01

Four n-in-n detectors were irradiated at KEK to a fluence of 3*1014 protons cm-2. These were used to construct a thermal barrel module to 070 drawings with an A3-90 baseboard at the Rutherford Appleton Laboratory. Thermal testes were conducted on the module, examining the runaway point and the temperatures across the silicon. The results obtained were used to calculate the runaway point under ATLAS conditions. It was concluded that this module meets the specifications in the Technical Design Report, of 160 mW mm-2@ 0°C for runaway and less than 5°C across the silicon. The module was also compared to a Finite Element Analysis, and showed a good agreement.

Development of the specialized integrated circuit for signal readout from micro-strip structures of a coordinate detectors

International Nuclear Information System (INIS)

Aulchenko, V.; Shekhtman, L.; Zhulanov, V.

2015-01-01

The paper presents current status of development of a specialized 64-channel integrated circuit (IC, ASIC) for front-end electronics of coordinate detectors in the Budker INP. The ASIC is produced using 180 nm process. During the recording phase the IC allows integration of short current pulses from strips of a coordinate sensor, and storing of up to 100 corresponding charge values in the analogue memory with minimum time interval of 100 ns. Maximum input charge is equal to 2×10 6 electrons, equivalent noise charge is ∼2.7×10 3 electrons. Conversion of the data, stored in the analogue memory, to digital form is performed by an external ADC during the readout through an analogue multiplexer

Self-Powered Neutron Detector Calibration Using a Large Vertical Irradiation Hole of HANARO