WorldWideScience

Sample records for stretchable silicon integrated

  1. Stretchable and foldable silicon-based electronics

    KAUST Repository

    Cavazos Sepulveda, Adrian Cesar

    2017-03-30

    Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

  2. Microstructured silicone substrate for printable and stretchable metallic films.

    Science.gov (United States)

    Robinson, Adam P; Minev, Ivan; Graz, Ingrid M; Lacour, Stéphanie P

    2011-04-19

    Stretchable electronics (i.e., hybrid inorganic or organic circuits integrated on elastomeric substrates) rely on elastic wiring. We present a technique for fabricating reversibly stretchable metallic films by printing silver-based ink onto microstructured silicone substrates. The wetting and pinning of the ink on the elastomer surface is adjusted and optimized by varying the geometry of micropillar arrays patterned on the silicone substrate. The resulting films exhibit high electrical conductivity (∼11 000 S/cm) and can stretch reversibly to 20% strain over 1000 times without failing electrically. The stretchability of the ≥200 nm thick metallic film relies on engineered strain relief in the printed film on patterned PDMS. © 2011 American Chemical Society

  3. Design and characterization of ultra-stretchable monolithic silicon fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-10-13

    Stretchable electronic systems can play instrumental role for reconfigurable macro-electronics such as distributed sensor networks for wearable and bio-integrated electronics. Typically, polymer composite based materials and its deterministic design as interconnects are used to achieve such systems. Nonetheless, non-polymeric inorganic silicon is the predominant material for 90% of electronics. Therefore, we report the design and fabrication of an all silicon based network of hexagonal islands connected through spiral springs to form an ultra-stretchable arrangement for complete compliance to highly asymmetric shapes. Several design parameters are considered and their validation is carried out through finite element analysis. The fabrication process is based on conventional microfabrication techniques and the measured stretchability is more than 1000% for single spirals and area expansions as high as 30 folds in arrays. The reported method can provide ultra-stretchable and adaptable electronic systems for distributed network of high-performance macro-electronics especially useful for wearable electronics and bio-integrated devices.

  4. Engineering in-plane silicon nanowire springs for highly stretchable electronics

    Science.gov (United States)

    Xue, Zhaoguo; Dong, Taige; Zhu, Zhimin; Zhao, Yaolong; Sun, Ying; Yu, Linwei

    2018-01-01

    Crystalline silicon (c-Si) is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional (1D) geometry, or the line-shape, of Si nanowire (SiNW) can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquid-solid (IPSLS) mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited. Project supported by the National Basic Research 973 Program (No. 2014CB921101), the National Natural Science Foundation of China (No. 61674075), the National Key Research and Development Program of China (No. 2017YFA0205003), the Jiangsu Excellent Young Scholar Program (No. BK20160020), the Scientific and Technological Support Program in Jiangsu Province (No. BE

  5. Biodegradable elastomers and silicon nanomembranes/nanoribbons for stretchable, transient electronics, and biosensors.

    Science.gov (United States)

    Hwang, Suk-Won; Lee, Chi Hwan; Cheng, Huanyu; Jeong, Jae-Woong; Kang, Seung-Kyun; Kim, Jae-Hwan; Shin, Jiho; Yang, Jian; Liu, Zhuangjian; Ameer, Guillermo A; Huang, Yonggang; Rogers, John A

    2015-05-13

    Transient electronics represents an emerging class of technology that exploits materials and/or device constructs that are capable of physically disappearing or disintegrating in a controlled manner at programmed rates or times. Inorganic semiconductor nanomaterials such as silicon nanomembranes/nanoribbons provide attractive choices for active elements in transistors, diodes and other essential components of overall systems that dissolve completely by hydrolysis in biofluids or groundwater. We describe here materials, mechanics, and design layouts to achieve this type of technology in stretchable configurations with biodegradable elastomers for substrate/encapsulation layers. Experimental and theoretical results illuminate the mechanical properties under large strain deformation. Circuit characterization of complementary metal-oxide-semiconductor inverters and individual transistors under various levels of applied loads validates the design strategies. Examples of biosensors demonstrate possibilities for stretchable, transient devices in biomedical applications.

  6. Body-Attachable and Stretchable Multisensors Integrated with Wirelessly Rechargeable Energy Storage Devices.

    Science.gov (United States)

    Kim, Daeil; Kim, Doyeon; Lee, Hyunkyu; Jeong, Yu Ra; Lee, Seung-Jung; Yang, Gwangseok; Kim, Hyoungjun; Lee, Geumbee; Jeon, Sanggeun; Zi, Goangseup; Kim, Jihyun; Ha, Jeong Sook

    2016-01-27

    A stretchable multisensor system is successfully demonstrated with an integrated energy-storage device, an array of microsupercapacitors that can be repeatedly charged via a wireless radio-frequency power receiver on the same stretchable polymer substrate. The integrated devices are interconnected by a liquid-metal interconnection and operate stably without noticeable performance degradation under strain due to the skin attachment, and a uniaxial strain up to 50%. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Drop casting of stiffness gradients for chip integration into stretchable substrates

    International Nuclear Information System (INIS)

    Naserifar, Naser; LeDuc, Philip R; Fedder, Gary K

    2017-01-01

    Stretchable electronics have demonstrated promise within unobtrusive wearable systems in areas such as health monitoring and medical therapy. One significant question is whether it is more advantageous to develop holistic stretchable electronics or to integrate mature CMOS into stretchable electronic substrates where the CMOS process is separated from the mechanical processing steps. A major limitation with integrating CMOS is the dissimilar interface between the soft stretchable and hard CMOS materials. To address this, we developed an approach to pattern an elastomeric polymer layer with spatially varying mechanical properties around CMOS electronics to create a controllable material stiffness gradient. Our experimental approach reveals that modifying the interfaces can increase the strain failure threshold up to 30% and subsequently decreases delamination. The stiffness gradient in the polymer layer provides a safe region for electronic chips to function under a substrate tensile strain up to 150%. These results will have impacts in diverse applications including skin sensors and wearable health monitoring systems. (paper)

  8. Environmentally Benign Production of Stretchable and Robust Superhydrophobic Silicone Monoliths.

    Science.gov (United States)

    Davis, Alexander; Surdo, Salvatore; Caputo, Gianvito; Bayer, Ilker S; Athanassiou, Athanassia

    2018-01-24

    Superhydrophobic materials hold an enormous potential in sectors as important as aerospace, food industries, or biomedicine. Despite this great promise, the lack of environmentally friendly production methods and limited robustness remain the two most pertinent barriers to the scalability, large-area production, and widespread use of superhydrophobic materials. In this work, highly robust superhydrophobic silicone monoliths are produced through a scalable and environmentally friendly emulsion technique. It is first found that stable and surfactantless water-in-polydimethylsiloxane (PDMS) emulsions can be formed through mechanical mixing. Increasing the internal phase fraction of the precursor emulsion is found to increase porosity and microtexture of the final monoliths, rendering them superhydrophobic. Silica nanoparticles can also be dispersed in the aqueous internal phase to create micro/nanotextured monoliths, giving further improvements in superhydrophobicity. Due to the elastomeric nature of PDMS, superhydrophobicity can be maintained even while the material is mechanically strained or compressed. In addition, because of their self-similarity, the monoliths show outstanding robustness to knife-scratch, tape-peel, and finger-wipe tests, as well as rigorous sandpaper abrasion. Superhydrophobicity was also unchanged when exposed to adverse environmental conditions including corrosive solutions, UV light, extreme temperatures, and high-energy droplet impact. Finally, important properties for eventual adoption in real-world applications including self-cleaning, stain-repellence, and blood-repellence are demonstrated.

  9. Stretchable form of single crystal silicon for high performance electronics on rubber substrates

    Science.gov (United States)

    University of Illinois

    2009-04-21

    The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  10. Black silicon integrated aperture

    Science.gov (United States)

    Liu, Tianbo; Dickensheets, David L.

    2017-10-01

    This paper describes the incorporation of nanotextured black silicon as an optical absorbing material into silicon-based micro-optoelectromechanical systems devices to reduce stray light and increase optical contrast during imaging. Black silicon is created through a maskless dry etch process and characterized for two different etch conditions, a cold etch performed at 0°C and a cryogenic etch performed at -110°C. We measure specular reflection at visible wavelengths to be black velvet paint used to coat optical baffles and compare favorably with other methods to produce black surfaces from nanotextured silicon or using carbon nanotubes. We illustrate the use of this material by integrating a black silicon aperture around the perimeter of a deformable focus-control mirror. Imaging results show a significant improvement in contrast and image fidelity due to the effective reduction in stray light achieved with the self-aligned black aperture.

  11. 2.5D direct laser engraving of silicone microfluidic channels for stretchable electronics

    OpenAIRE

    Nagels, Steven; Deferme, Wim

    2017-01-01

    Stretchable and bendable sensors have become increasingly relevant as the technology behind them matures rapidly from lab based to industrially applicable production principles. In a broader sense, stretchable electronics promises to increase the way we are surrounded by and interact with our devices. Electronic circuits will be deployed in environments where we require them to dynamically flex, bend, stretch, compress, twist and - quite possibly - even fold; where they have to demonstrate a ...

  12. Waterproof stretchable optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, John A.; Kim, Rak-Hwan; Kim, Dae-Hyeong; Kaplan, David L.; Omenetto, Fiorenzo G.

    2018-04-03

    Described herein are flexible and stretchable LED arrays and methods utilizing flexible and stretchable LED arrays. Assembly of flexible LED arrays alongside flexible plasmonic crystals is useful for construction of fluid monitors, permitting sensitive detection of fluid refractive index and composition. Co-integration of flexible LED arrays with flexible photodetector arrays is useful for construction of flexible proximity sensors. Application of stretchable LED arrays onto flexible threads as light emitting sutures provides novel means for performing radiation therapy on wounds.

  13. A stretchable and screen-printable conductive ink for stretchable electronics

    Science.gov (United States)

    Mohammed, Anwar; Pecht, Michael

    2016-10-01

    Stretchable electronics can offer an added degree of design freedom and generate products with unprecedented capabilities. Stretchable conductive ink serving as interconnect, is a key enabler for stretchable electronics. This paper focuses on the development of a stretchable and screen printable conductive ink which could be stretched more than 500 cycles at 20% strain while maintaining electrical and mechanical integrity. The screen printable and stretchable conductive ink developed in this paper marks an important milestone for this nascent technology.

  14. Stretchable electronics for wearable and high-current applications

    Science.gov (United States)

    Hilbich, Daniel; Shannon, Lesley; Gray, Bonnie L.

    2016-04-01

    Advances in the development of novel materials and fabrication processes are resulting in an increased number of flexible and stretchable electronics applications. This evolving technology enables new devices that are not readily fabricated using traditional silicon processes, and has the potential to transform many industries, including personalized healthcare, consumer electronics, and communication. Fabrication of stretchable devices is typically achieved through the use of stretchable polymer-based conductors, or more rigid conductors, such as metals, with patterned geometries that can accommodate stretching. Although the application space for stretchable electronics is extensive, the practicality of these devices can be severely limited by power consumption and cost. Moreover, strict process flows can impede innovation that would otherwise enable new applications. In an effort to overcome these impediments, we present two modified approaches and applications based on a newly developed process for stretchable and flexible electronics fabrication. This includes the development of a metallization pattern stamping process allowing for 1) stretchable interconnects to be directly integrated with stretchable/wearable fabrics, and 2) a process variation enabling aligned multi-layer devices with integrated ferromagnetic nanocomposite polymer components enabling a fully-flexible electromagnetic microactuator for large-magnitude magnetic field generation. The wearable interconnects are measured, showing high conductivity, and can accommodate over 20% strain before experiencing conductive failure. The electromagnetic actuators have been fabricated and initial measurements show well-aligned, highly conductive, isolated metal layers. These two applications demonstrate the versatility of the newly developed process and suggest potential for its furthered use in stretchable electronics and MEMS applications.

  15. Fractal design concepts for stretchable electronics.

    Science.gov (United States)

    Fan, Jonathan A; Yeo, Woon-Hong; Su, Yewang; Hattori, Yoshiaki; Lee, Woosik; Jung, Sung-Young; Zhang, Yihui; Liu, Zhuangjian; Cheng, Huanyu; Falgout, Leo; Bajema, Mike; Coleman, Todd; Gregoire, Dan; Larsen, Ryan J; Huang, Yonggang; Rogers, John A

    2014-01-01

    Stretchable electronics provide a foundation for applications that exceed the scope of conventional wafer and circuit board technologies due to their unique capacity to integrate with soft materials and curvilinear surfaces. The range of possibilities is predicated on the development of device architectures that simultaneously offer advanced electronic function and compliant mechanics. Here we report that thin films of hard electronic materials patterned in deterministic fractal motifs and bonded to elastomers enable unusual mechanics with important implications in stretchable device design. In particular, we demonstrate the utility of Peano, Greek cross, Vicsek and other fractal constructs to yield space-filling structures of electronic materials, including monocrystalline silicon, for electrophysiological sensors, precision monitors and actuators, and radio frequency antennas. These devices support conformal mounting on the skin and have unique properties such as invisibility under magnetic resonance imaging. The results suggest that fractal-based layouts represent important strategies for hard-soft materials integration.

  16. Microfluidic stretchable RF electronics.

    Science.gov (United States)

    Cheng, Shi; Wu, Zhigang

    2010-12-07

    Stretchable electronics is a revolutionary technology that will potentially create a world of radically different electronic devices and systems that open up an entirely new spectrum of possibilities. This article proposes a microfluidic based solution for stretchable radio frequency (RF) electronics, using hybrid integration of active circuits assembled on flex foils and liquid alloy passive structures embedded in elastic substrates, e.g. polydimethylsiloxane (PDMS). This concept was employed to implement a 900 MHz stretchable RF radiation sensor, consisting of a large area elastic antenna and a cluster of conventional rigid components for RF power detection. The integrated radiation sensor except the power supply was fully embedded in a thin elastomeric substrate. Good electrical performance of the standalone stretchable antenna as well as the RF power detection sub-module was verified by experiments. The sensor successfully detected the RF radiation over 5 m distance in the system demonstration. Experiments on two-dimensional (2D) stretching up to 15%, folding and twisting of the demonstrated sensor were also carried out. Despite the integrated device was severely deformed, no failure in RF radiation sensing was observed in the tests. This technique illuminates a promising route of realizing stretchable and foldable large area integrated RF electronics that are of great interest to a variety of applications like wearable computing, health monitoring, medical diagnostics, and curvilinear electronics.

  17. Hybrid Integrated Platforms for Silicon Photonics

    Science.gov (United States)

    Liang, Di; Roelkens, Gunther; Baets, Roel; Bowers, John E.

    2010-01-01

    A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

  18. Flexible and Stretchable Microneedle Patches with Integrated Rigid Stainless Steel Microneedles for Transdermal Biointerfacing.

    Science.gov (United States)

    Rajabi, Mina; Roxhed, Niclas; Shafagh, Reza Zandi; Haraldson, Tommy; Fischer, Andreas Christin; Wijngaart, Wouter van der; Stemme, Göran; Niklaus, Frank

    2016-01-01

    This paper demonstrates flexible and stretchable microneedle patches that combine soft and flexible base substrates with hard and sharp stainless steel microneedles. An elastomeric polymer base enables conformal contact between the microneedle patch and the complex topography and texture of the underlying skin, while robust and sharp stainless steel microneedles reliably pierce the outer layers of the skin. The flexible microneedle patches have been realized by magnetically assembling short stainless steel microneedles into a flexible polymer supporting base. In our experimental investigation, the microneedle patches were applied to human skin and an excellent adaptation of the patch to the wrinkles and deformations of the skin was verified, while at the same time the microneedles reliably penetrate the surface of the skin. The unobtrusive flexible and stretchable microneedle patches have great potential for transdermal biointerfacing in a variety of emerging applications such as transdermal drug delivery, bioelectric treatments and wearable bio-electronics for health and fitness monitoring.

  19. Ultra-Stretchable Interconnects for High-Density Stretchable Electronics

    Directory of Open Access Journals (Sweden)

    Salman Shafqat

    2017-09-01

    Full Text Available The exciting field of stretchable electronics (SE promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS-type process recipes using bulk integrated circuit (IC microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.

  20. Emerging heterogeneous integrated photonic platforms on silicon

    Directory of Open Access Journals (Sweden)

    Fathpour Sasan

    2015-05-01

    Full Text Available Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths and feasibility of electrically-injected lasers (at least at room temperature. More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III–V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for

  1. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  2. Soft, stretchable, epidermal sensor with integrated electronics and photochemistry for measuring personal UV exposures.

    Directory of Open Access Journals (Sweden)

    Yunzhou Shi

    Full Text Available Excessive ultraviolet (UV radiation induces acute and chronic effects on the skin, eye and immune system. Personalized monitoring of UV radiation is thus paramount to measure the extent of personal sun exposure, which could vary with environment, lifestyle, and sunscreen use. Here, we demonstrate an ultralow modulus, stretchable, skin-mounted UV patch that measures personal UV doses. The patch contains functional layers of ultrathin stretchable electronics and a photosensitive patterned dye that reacts to UV radiation. Color changes in the photosensitive dyes correspond to UV radiation intensity and are analyzed with a smartphone camera. A software application has feature recognition, lighting condition correction, and quantification algorithms that detect and quantify changes in color. These color changes are then correlated with corresponding shifts in UV dose, and compared to existing UV dose risk levels. The soft mechanics of the UV patch allow for multi-day wear in the presence of sunscreen and water. Two evaluation studies serve to demonstrate the utility of the UV patch during daily activities with and without sunscreen application.

  3. Soft, stretchable, epidermal sensor with integrated electronics and photochemistry for measuring personal UV exposures.

    Science.gov (United States)

    Shi, Yunzhou; Manco, Megan; Moyal, Dominique; Huppert, Gil; Araki, Hitoshi; Banks, Anthony; Joshi, Hemant; McKenzie, Richard; Seewald, Alex; Griffin, Guy; Sen-Gupta, Ellora; Wright, Donald; Bastien, Philippe; Valceschini, Florent; Seité, Sophie; Wright, John A; Ghaffari, Roozbeh; Rogers, John; Balooch, Guive; Pielak, Rafal M

    2018-01-01

    Excessive ultraviolet (UV) radiation induces acute and chronic effects on the skin, eye and immune system. Personalized monitoring of UV radiation is thus paramount to measure the extent of personal sun exposure, which could vary with environment, lifestyle, and sunscreen use. Here, we demonstrate an ultralow modulus, stretchable, skin-mounted UV patch that measures personal UV doses. The patch contains functional layers of ultrathin stretchable electronics and a photosensitive patterned dye that reacts to UV radiation. Color changes in the photosensitive dyes correspond to UV radiation intensity and are analyzed with a smartphone camera. A software application has feature recognition, lighting condition correction, and quantification algorithms that detect and quantify changes in color. These color changes are then correlated with corresponding shifts in UV dose, and compared to existing UV dose risk levels. The soft mechanics of the UV patch allow for multi-day wear in the presence of sunscreen and water. Two evaluation studies serve to demonstrate the utility of the UV patch during daily activities with and without sunscreen application.

  4. Scalable Microfabrication Procedures for Adhesive-Integrated Flexible and Stretchable Electronic Sensors

    Science.gov (United States)

    Kang, Dae Y.; Kim, Yun-Soung; Ornelas, Gladys; Sinha, Mridu; Naidu, Keerthiga; Coleman, Todd P.

    2015-01-01

    New classes of ultrathin flexible and stretchable devices have changed the way modern electronics are designed to interact with their target systems. Though more and more novel technologies surface and steer the way we think about future electronics, there exists an unmet need in regards to optimizing the fabrication procedures for these devices so that large-scale industrial translation is realistic. This article presents an unconventional approach for facile microfabrication and processing of adhesive-peeled (AP) flexible sensors. By assembling AP sensors on a weakly-adhering substrate in an inverted fashion, we demonstrate a procedure with 50% reduced end-to-end processing time that achieves greater levels of fabrication yield. The methodology is used to demonstrate the fabrication of electrical and mechanical flexible and stretchable AP sensors that are peeled-off their carrier substrates by consumer adhesives. In using this approach, we outline the manner by which adhesion is maintained and buckling is reduced for gold film processing on polydimethylsiloxane substrates. In addition, we demonstrate the compatibility of our methodology with large-scale post-processing using a roll-to-roll approach. PMID:26389915

  5. Soft, stretchable, epidermal sensor with integrated electronics and photochemistry for measuring personal UV exposures

    Science.gov (United States)

    Shi, Yunzhou; Manco, Megan; Moyal, Dominique; Huppert, Gil; Araki, Hitoshi; Banks, Anthony; Joshi, Hemant; McKenzie, Richard; Seewald, Alex; Griffin, Guy; Sen-Gupta, Ellora; Wright, Donald; Bastien, Philippe; Valceschini, Florent; Seité, Sophie; Wright, John A.; Ghaffari, Roozbeh; Rogers, John; Balooch, Guive

    2018-01-01

    Excessive ultraviolet (UV) radiation induces acute and chronic effects on the skin, eye and immune system. Personalized monitoring of UV radiation is thus paramount to measure the extent of personal sun exposure, which could vary with environment, lifestyle, and sunscreen use. Here, we demonstrate an ultralow modulus, stretchable, skin-mounted UV patch that measures personal UV doses. The patch contains functional layers of ultrathin stretchable electronics and a photosensitive patterned dye that reacts to UV radiation. Color changes in the photosensitive dyes correspond to UV radiation intensity and are analyzed with a smartphone camera. A software application has feature recognition, lighting condition correction, and quantification algorithms that detect and quantify changes in color. These color changes are then correlated with corresponding shifts in UV dose, and compared to existing UV dose risk levels. The soft mechanics of the UV patch allow for multi-day wear in the presence of sunscreen and water. Two evaluation studies serve to demonstrate the utility of the UV patch during daily activities with and without sunscreen application. PMID:29293664

  6. Scalable Microfabrication Procedures for Adhesive-Integrated Flexible and Stretchable Electronic Sensors

    Directory of Open Access Journals (Sweden)

    Dae Y. Kang

    2015-09-01

    Full Text Available New classes of ultrathin flexible and stretchable devices have changed the way modern electronics are designed to interact with their target systems. Though more and more novel technologies surface and steer the way we think about future electronics, there exists an unmet need in regards to optimizing the fabrication procedures for these devices so that large-scale industrial translation is realistic. This article presents an unconventional approach for facile microfabrication and processing of adhesive-peeled (AP flexible sensors. By assembling AP sensors on a weakly-adhering substrate in an inverted fashion, we demonstrate a procedure with 50% reduced end-to-end processing time that achieves greater levels of fabrication yield. The methodology is used to demonstrate the fabrication of electrical and mechanical flexible and stretchable AP sensors that are peeled-off their carrier substrates by consumer adhesives. In using this approach, we outline the manner by which adhesion is maintained and buckling is reduced for gold film processing on polydimethylsiloxane substrates. In addition, we demonstrate the compatibility of our methodology with large-scale post-processing using a roll-to-roll approach.

  7. Scalable Microfabrication Procedures for Adhesive-Integrated Flexible and Stretchable Electronic Sensors.

    Science.gov (United States)

    Kang, Dae Y; Kim, Yun-Soung; Ornelas, Gladys; Sinha, Mridu; Naidu, Keerthiga; Coleman, Todd P

    2015-09-16

    New classes of ultrathin flexible and stretchable devices have changed the way modern electronics are designed to interact with their target systems. Though more and more novel technologies surface and steer the way we think about future electronics, there exists an unmet need in regards to optimizing the fabrication procedures for these devices so that large-scale industrial translation is realistic. This article presents an unconventional approach for facile microfabrication and processing of adhesive-peeled (AP) flexible sensors. By assembling AP sensors on a weakly-adhering substrate in an inverted fashion, we demonstrate a procedure with 50% reduced end-to-end processing time that achieves greater levels of fabrication yield. The methodology is used to demonstrate the fabrication of electrical and mechanical flexible and stretchable AP sensors that are peeled-off their carrier substrates by consumer adhesives. In using this approach, we outline the manner by which adhesion is maintained and buckling is reduced for gold film processing on polydimethylsiloxane substrates. In addition, we demonstrate the compatibility of our methodology with large-scale post-processing using a roll-to-roll approach.

  8. Self-similar and fractal design for stretchable electronics

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, John A.; Fan, Jonathan; Yeo, Woon-Hong; Su, Yewang; Huang, Yonggang; Zhang, Yihui

    2017-04-04

    The present invention provides electronic circuits, devices and device components including one or more stretchable components, such as stretchable electrical interconnects, electrodes and/or semiconductor components. Stretchability of some of the present systems is achieved via a materials level integration of stretchable metallic or semiconducting structures with soft, elastomeric materials in a configuration allowing for elastic deformations to occur in a repeatable and well-defined way. The stretchable device geometries and hard-soft materials integration approaches of the invention provide a combination of advance electronic function and compliant mechanics supporting a broad range of device applications including sensing, actuation, power storage and communications.

  9. Stretchable electronics

    CERN Document Server

    Someya, Takao

    2012-01-01

    With its comprehensive coverage this handbook and ready reference brings together some of the most outstanding scientists in the field to lay down the undisputed knowledge on how to make electronics stretchable.As such, it focuses on gathering and evaluating the materials, designs, models and technologies that enable the fabrication of fully elastic electronic devices which can sustain high strain. Furthermore, it provides a review of those specific applications that directly benefit from highly compliant electronics, including transistors, photonic devices and sensors. In addition to stre

  10. Mechanics and thermal management of stretchable inorganic electronics.

    Science.gov (United States)

    Song, Jizhou; Feng, Xue; Huang, Yonggang

    2016-03-01

    Stretchable electronics enables lots of novel applications ranging from wearable electronics, curvilinear electronics to bio-integrated therapeutic devices that are not possible through conventional electronics that is rigid and flat in nature. One effective strategy to realize stretchable electronics exploits the design of inorganic semiconductor material in a stretchable format on an elastomeric substrate. In this review, we summarize the advances in mechanics and thermal management of stretchable electronics based on inorganic semiconductor materials. The mechanics and thermal models are very helpful in understanding the underlying physics associated with these systems, and they also provide design guidelines for the development of stretchable inorganic electronics.

  11. Mechanics and thermal management of stretchable inorganic electronics

    Science.gov (United States)

    Song, Jizhou; Feng, Xue; Huang, Yonggang

    2016-01-01

    Stretchable electronics enables lots of novel applications ranging from wearable electronics, curvilinear electronics to bio-integrated therapeutic devices that are not possible through conventional electronics that is rigid and flat in nature. One effective strategy to realize stretchable electronics exploits the design of inorganic semiconductor material in a stretchable format on an elastomeric substrate. In this review, we summarize the advances in mechanics and thermal management of stretchable electronics based on inorganic semiconductor materials. The mechanics and thermal models are very helpful in understanding the underlying physics associated with these systems, and they also provide design guidelines for the development of stretchable inorganic electronics. PMID:27547485

  12. Stretchable biocompatible electronics by embedding electrical circuitry in biocompatible elastomers.

    Science.gov (United States)

    Jahanshahi, Amir; Salvo, Pietro; Vanfleteren, Jan

    2012-01-01

    Stretchable and curvilinear electronics has been used recently for the fabrication of micro systems interacting with the human body. The applications range from different kinds of implantable sensors inside the body to conformable electrodes and artificial skins. One of the key parameters in biocompatible stretchable electronics is the fabrication of reliable electrical interconnects. Although very recent literature has reported on the reliability of stretchable interconnects by cyclic loading, work still needs to be done on the integration of electrical circuitry composed of rigid components and stretchable interconnects in a biological environment. In this work, the feasibility of a developed technology to fabricate simple electrical circuits with meander shaped stretchable interconnects is presented. Stretchable interconnects are 200 nm thin Au layer supported with polyimide (PI). A stretchable array of light emitting diodes (LEDs) is embedded in biocompatible elastomer using this technology platform and it features a 50% total elongation.

  13. Silicon integrated circuits part A : supplement 2

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters-physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This public

  14. Integrated Arrays on Silicon at Terahertz Frequencies

    Science.gov (United States)

    Chattopadhayay, Goutam; Lee, Choonsup; Jung, Cecil; Lin, Robert; Peralta, Alessandro; Mehdi, Imran; Llombert, Nuria; Thomas, Bertrand

    2011-01-01

    In this paper we explore various receiver font-end and antenna architecture for use in integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies and use of novel integrated antennas with silicon micromachining are reported. We report novel stacking of micromachined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages which easily leads to the development of 2- dimensioanl multi-pixel receiver front-ends in the terahertz frequency range. We also report an integrated micro-lens antenna that goes with the silicon micro-machined front-end. The micro-lens antenna is fed by a waveguide that excites a silicon lens antenna through a leaky-wave or electromagnetic band gap (EBG) resonant cavity. We utilized advanced semiconductor nanofabrication techniques to design, fabricate, and demonstrate a super-compact, low-mass submillimeter-wave heterodyne frontend. When the micro-lens antenna is integrated with the receiver front-end we will be able to assemble integrated heterodyne array receivers for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.

  15. Porous silicon technology for integrated microsystems

    Science.gov (United States)

    Wallner, Jin Zheng

    With the development of micro systems, there is an increasing demand for integrable porous materials. In addition to those conventional applications, such as filtration, wicking, and insulating, many new micro devices, including micro reactors, sensors, actuators, and optical components, can benefit from porous materials. Conventional porous materials, such as ceramics and polymers, however, cannot meet the challenges posed by micro systems, due to their incompatibility with standard micro-fabrication processes. In an effort to produce porous materials that can be used in micro systems, porous silicon (PS) generated by anodization of single crystalline silicon has been investigated. In this work, the PS formation process has been extensively studied and characterized as a function of substrate type, crystal orientation, doping concentration, current density and surfactant concentration and type. Anodization conditions have been optimized for producing very thick porous silicon layers with uniform pore size, and for obtaining ideal pore morphologies. Three different types of porous silicon materials: meso porous silicon, macro porous silicon with straight pores, and macro porous silicon with tortuous pores, have been successfully produced. Regular pore arrays with controllable pore size in the range of 2mum to 6mum have been demonstrated as well. Localized PS formation has been achieved by using oxide/nitride/polysilicon stack as masking materials, which can withstand anodization in hydrofluoric acid up to twenty hours. A special etching cell with electrolytic liquid backside contact along with two process flows has been developed to enable the fabrication of thick macro porous silicon membranes with though wafer pores. For device assembly, Si-Au and In-Au bonding technologies have been developed. Very low bonding temperature (˜200°C) and thick/soft bonding layers (˜6mum) have been achieved by In-Au bonding technology, which is able to compensate the potentially

  16. Silicon Photonic Integrated Circuit Mode Multiplexer

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Xu, Jing

    2013-01-01

    We propose and demonstrate a novel silicon photonic integrated circuit enabling multiplexing of orthogonal modes in a few-mode fiber (FMF). By selectively launching light to four vertical grating couplers, all six orthogonal spatial and polarization modes supported by the FMF are successfully exc...

  17. Materials issues in silicon integrated circuit processing

    International Nuclear Information System (INIS)

    Wittmer, M.; Stimmell, J.; Strathman, M.

    1986-01-01

    The symposium on ''Materials Issues in Integrated Circuit Processing'' sought to bring together all of the materials issued pertinent to modern integrated circuit processing. The inherent properties of the materials are becoming an important concern in integrated circuit manufacturing and accordingly research in materials science is vital for the successful implementation of modern integrated circuit technology. The session on Silicon Materials Science revealed the advanced stage of knowledge which topics such as point defects, intrinsic and extrinsic gettering and diffusion kinetics have achieved. Adaption of this knowledge to specific integrated circuit processing technologies is beginning to be addressed. The session on Epitaxy included invited papers on epitaxial insulators and IR detectors. Heteroepitaxy on silicon is receiving great attention and the results presented in this session suggest that 3-d integrated structures are an increasingly realistic possibility. Progress in low temperature silicon epitaxy and epitaxy of thin films with abrupt interfaces was also reported. Diffusion and Ion Implantation were well presented. Regrowth of implant-damaged layers and the nature of the defects which remain after regrowth were discussed in no less than seven papers. Substantial progress was also reported in the understanding of amorphising boron implants and the use of gallium implants for the formation of shallow p/sup +/ -layers

  18. CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

    KAUST Repository

    Hussain, Aftab M.

    2015-11-26

    Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today\\'s digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Photonic integration and photonics-electronics convergence on silicon platform

    CERN Document Server

    Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

    2015-01-01

    Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

  20. Silicon-Based Light Sources for Silicon Integrated Circuits

    Directory of Open Access Journals (Sweden)

    L. Pavesi

    2008-01-01

    Full Text Available Silicon the material per excellence for electronics is not used for sourcing light due to the lack of efficient light emitters and lasers. In this review, after having introduced the basics on lasing, I will discuss the physical reasons why silicon is not a laser material and the approaches to make it lasing. I will start with bulk silicon, then I will discuss silicon nanocrystals and Er3+ coupled silicon nanocrystals where significant advances have been done in the past and can be expected in the near future. I will conclude with an optimistic note on silicon lasing.

  1. Integrating optical emitters into silicon photonic waveguides

    Science.gov (United States)

    Milgram, Joel

    This thesis reports work targeting the integration of Si light emitters with optical waveguides. Such integrated devices would find utility in a number of applications including telecommunications, optical interconnects, and biological and chemical sensors. Much research has been directed by others on how to improve the emission efficiency and achieve lasing in VLSI (very large scale integration) compatible sources. Here, the focus is on how such devices can be integrated with planar waveguides. Two enhancement techniques were selected for potential integration; defect engineering (DE), and Si nanocrystals (Si-nc) embedded in SOI2. Defect engineered light emitting diodes (LEDs) made on silicon-on-insulator (SOI) and emitting at 1.1 mum were successfully demonstrated. In addition, surface photoluminescence from SOI was analyzed to account for interference from the SOI cavity. However, it was determined that the emission efficiency of defect engineered LEDs studied during the course of this work is below that which was reported previously, and that the fabrication procedure thus suffers from irreproducibility. Barring an enormous advancement in the DE technique, it is concluded that the emission efficiency is too small to make use of its integration potential. A more successful approach was obtained from the Si-nc system fabricated using electron-cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD). Optically pumped edge emitting devices were designed, fabricated and characterized. The devices are comprised of Si-ncs emitting at 800 nm, integrated with slab silicon nitride waveguides. This work is the first report of edge emission from Si-ncs integrated with silicon nitride waveguides. Edge emission and waveguide properties were characterized in the ˜850 nm emission band of the Si-ncs, The edge emission was well described as a propagating mode, attenuated primarily by the Si-nc film. Propagation losses of a typical air/Si-nc/SiNx/SiO2 waveguide

  2. Laser Integration on Silicon Photonic Circuits Through Transfer Printing

    Science.gov (United States)

    2017-03-10

    silicon transfer printed single wavelength laser . Introduction Silicon has long offered promise as the ultimate platform for realizing compact photonic...the field has faced a big stumbling block: the lack of an integrated laser source. Thus far, silicon-photonics applications have had to rely on...AFRL-AFOSR-UK-TR-2017-0019 Laser integration on silicon photonic circuits through transfer printing Gunther Roelkens UNIVERSITEIT GENT VZW Final

  3. Silicon Oxynitride: A Versatile Material for Integrated Optics Applications

    NARCIS (Netherlands)

    Worhoff, Kerstin; Hilderink, L.T.H.; Driessen, A.; Lambeck, Paul

    Silicon oxynitride is a very attractive material for integrated optics application, because of its excellent optical properties (~e.g. optical loss below 0.2 dB/cm!, the large refractive index range ~between 1.45 for silicon oxide and 2.0 for silicon nitride), and last but not least, the

  4. Stretchable inductor with liquid magnetic core

    Science.gov (United States)

    Lazarus, N.; Meyer, C. D.

    2016-03-01

    Adding magnetic materials is a well-established method for improving performance of inductors. However, traditional magnetic cores are rigid and poorly suited for the emerging field of stretchable electronics, where highly deformable inductors are used to wirelessly couple power and data signals. In this work, stretchable inductors are demonstrated based on the use of ferrofluids, magnetic liquids based on distributed magnetic particles, to create a compliant magnetic core. Using a silicone molding technique to create multi-layer fluidic channels, a liquid metal solenoid is fabricated around a ferrofluid channel. An analytical model is developed for the effects of mechanical strain, followed by experimental verification using two different ferrofluids with different permeabilities. Adding ferrofluid was found to increase the unstrained inductance by up to 280% relative to a similar inductor with a non-magnetic silicone core, while retaining the ability to survive uniaxial strains up to 100%.

  5. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    -division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

  6. Biomedical stretchable sytems using MID based stretchable electronics technology.

    Science.gov (United States)

    Axisa, F; Brosteaux, D; De Leersnyder, E; Bossuyt, F; Vanfleteren, J; Hermans, B; Puers, R

    2007-01-01

    In order to fit human body, flexibility, or even better stretchability is requested for biomedical systems like implants or smart clothes. A stretchable electronic technology has been developed. This can provide highly stretchable interconnections fully compatible with PCB technologies. In order to prove the feasibility of complex biomedical systems like inner body implants or wearable systems, a variety of stretchable systems has been designed from sensor to power source systems.

  7. Development of a New Stretchable and Screen Printable Conductive Ink

    Science.gov (United States)

    Mohammed, Anwar A.

    Stretchable conductive ink is a key enabler for stretchable electronics. This thesis research focuses on the development of a new stretchable and screen printable conductive ink. After print and cure, this ink would be capable of being stretched by at least 500 cycles at 20% strain without increasing its resistance by more than 30 times the original resistance, while maintaining electrical and mechanical integrity. For a stretchable and screen-printable conductive ink, the correct morphology of the metal powder selected and the ability of the binder to be stretched after the sintering process, are both indispensable. This research has shown that a bi-modal mixture of fine and large-diameter silver flakes will improve stretchability. While the smaller flakes increase the conductivity and lower the sintering temperature, the larger flake particles promote ohmic connectivity during stretching. The bi-modal flake distribution increases connection points while enhancing packing density and lowering the thermal activation barrier. The polymer binder phase plays a crucial role in offering stretchability to the stretchable conductive inks. The silver flakes by themselves are not stretchable but they are contained within a stretchable binder system. The research demonstrates that commonly used printable ink binder when combined with large-chain polymers through a process known as 'elastomeric chain polymerization' will enable the conductive ink to become more stretchable. This research has shown that the new stretchable and screen printable silver conductive ink developed based upon the two insights mentioned above; (1) bi modal flakes to improve ohmic connectivity during stretching and (2) elastomeric chain polymerized binder system which could stretch even after the ink is sintered to the substrate, can exhibit an ink stretchability of at least 500 cycles at 20% strain while increasing the resistance by less than 30 times the original resistance. Wavy print patterns can

  8. DEA deformed stretchable patch antenna

    International Nuclear Information System (INIS)

    Jiang, X-J; Jalali Mazlouman, S; Menon, C; Mahanfar, A; Vaughan, R G

    2012-01-01

    A stretchable patch antenna (SPA) whose frequency is tuned by a planar dielectric elastomer actuator (DEA) is presented in this paper. This mechanically reconfigurable antenna system has a configuration resembling a pre-stretched silicone belt. Part of the belt is embedded with a layer of conductive liquid metal to form the patch antenna. Part of the belt is sandwiched between conductive electrodes to form the DEA. Electrical activation of the DEA results in a contraction of the patch antenna, and as a result, in a variation of its resonance frequency. Design and fabrication steps of this system are presented. Measurement results for deformation, resonance frequency variation and efficiency of the patch antenna are also presented. (paper)

  9. VCSEL Scaling, Laser Integration on Silicon, and Bit Energy

    Science.gov (United States)

    2017-03-01

    Silicon Photonics: Figure 1 shows the electronic circuitry and comparison key to analyzing photonic bit energies for transceivers used in data centers...VCSEL Scaling, Laser Integration on Silicon , and Bit Energy D.G. Deppe,1,2 Ja. Leshin,1 and Je. Leshin1 1CREOL, College of Optics & Photonics...laser; (000.0000) General [For codes, see www.opticsinfobase.org/submit/ocis.] Keywords: VCSELs, Nanoscale lasers, optical interconnects, silicon

  10. Mid-infrared integrated photonics on silicon: a perspective

    Science.gov (United States)

    Lin, Hongtao; Luo, Zhengqian; Gu, Tian; Kimerling, Lionel C.; Wada, Kazumi; Agarwal, Anu; Hu, Juejun

    2017-12-01

    The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

  11. Flexible integration of free-standing nanowires into silicon photonics.

    Science.gov (United States)

    Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

    2017-06-14

    Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

  12. From stretchable to reconfigurable inorganic electronics

    KAUST Repository

    Nassar, Joanna M.

    2016-05-06

    Today’s state-of-the-art electronics are high performing, energy efficient, multi-functional and cost effective. However, they are also typically rigid and brittle. With the emergence of the Internet of Everything, electronic applications are expanding into previously unexplored areas, like healthcare, smart wearable artifacts, and robotics. One major challenge is the physical asymmetry of target application surfaces, which often cause mechanical stretching, contracting, twisting and other deformations to the application. In this review paper, we explore materials, processes, mechanics and devices that enable physically stretchable and reconfigurable electronics. While the concept of stretchable electronics is commonly used in practice, the notion of physically reconfigurable electronics is still in its infancy. Because organic materials are commonly naturally stretchable and physically deformable, we predominantly focus on electronics made from inorganic materials that have the capacity for physical stretching and reconfiguration while retaining their intended attributes. We emphasize how applications of electronics dictate theory to integration strategy for stretchable and reconfigurable inorganic electronics.

  13. III-V semiconductor devices integrated with silicon III-V semiconductor devices integrated with silicon

    Science.gov (United States)

    Hopkinson, Mark; Martin, Trevor; Smowton, Peter

    2013-09-01

    The integration of III-V semiconductor devices with silicon is one of the most topical challenges in current electronic materials research. The combination has the potential to exploit the unique optical and electronic functionality of III-V technology with the signal processing capabilities and advanced low-cost volume production techniques associated with silicon. Key industrial drivers include the use of high mobility III-V channel materials (InGaAs, InAs, InSb) to extend the performance of Si CMOS, the unification of electronics and photonics by combining photonic components (GaAs, InP) with a silicon platform for next-generation optical interconnects and the exploitation of large-area silicon substrates and high-volume Si processing capabilities to meet the challenges of low-cost production, a challenge which is particularly important for GaN-based devices in both power management and lighting applications. The diverse nature of the III-V and Si device approaches, materials technologies and the distinct differences between industrial Si and III-V processing have provided a major barrier to integration in the past. However, advances over the last decade in areas such as die transfer, wafer fusion and epitaxial growth have promoted widespread renewed interest. It is now timely to bring some of these topics together in a special issue covering a range of approaches and materials providing a snapshot of recent progress across the field. The issue opens a paper describing a strategy for the epitaxial integration of photonic devices where Kataria et al describe progress in the lateral overgrowth of InP/Si. As an alternative, Benjoucef and Reithmaier report on the potential of InAs quantum dots grown direct onto Si surfaces whilst Sandall et al describe the properties of similar InAs quantum dots as an optical modulator device. As an alternative to epitaxial integration approaches, Yokoyama et al describe a wafer bonding approach using a buried oxide concept, Corbett

  14. Towards Silicon-Based Longwave Integrated Optoelectronics (LIO)

    Science.gov (United States)

    2008-01-21

    complex longwave functions performed by the on-chip network, (6) adaptable sensing using intelligent electronics, (7) inexpensive Foundry integration...PD1 PD2 Tunable laser diode gas everywhere on serpent Silicon LIO chip Ge/Si ref rence waveguide (no slot) Slotted serpentine Ge/Si waveguide μB1...everywhere on serpent CMOS electronics Silicon LIO chip Ge/Si reference waveguide (no slot) Slotted Ge/Si waveguide

  15. An integrated silicon double bridge anemometer

    NARCIS (Netherlands)

    van Putten, A.F.P.

    1983-01-01

    Since 1974, silicon has been used for making flow sensors, though a lot of problems with respect to drift in time and temperature behaviour had to be solved. This is especially the case when the chip is operating at elevated temperatures. Heat conduction plays a vital role in the general heat

  16. Silicon integrated circuits advances in materials and device research

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, an

  17. Skin electronics from scalable fabrication of an intrinsically stretchable transistor array.

    Science.gov (United States)

    Wang, Sihong; Xu, Jie; Wang, Weichen; Wang, Ging-Ji Nathan; Rastak, Reza; Molina-Lopez, Francisco; Chung, Jong Won; Niu, Simiao; Feig, Vivian R; Lopez, Jeffery; Lei, Ting; Kwon, Soon-Ki; Kim, Yeongin; Foudeh, Amir M; Ehrlich, Anatol; Gasperini, Andrea; Yun, Youngjun; Murmann, Boris; Tok, Jeffery B-H; Bao, Zhenan

    2018-03-01

    Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring, medical treatment, medical implants and biological studies, and for technologies that include human-machine interfaces, soft robotics and augmented reality. Rendering such electronics soft and stretchable-like human skin-would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array. We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy: such materials have been reported, but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current-voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a

  18. Monolithically Integrated High-β Nanowire Lasers on Silicon.

    Science.gov (United States)

    Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

    2016-01-13

    Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.

  19. Novel technique for reliability testing of silicon integrated circuits

    NARCIS (Netherlands)

    Le Minh, P.; Wallinga, Hans; Woerlee, P.H.; van den Berg, Albert; Holleman, J.

    2001-01-01

    We propose a simple, inexpensive technique with high resolution to identify the weak spots in integrated circuits by means of a non-destructive photochemical process in which photoresist is used as the photon detection tool. The experiment was done to localize the breakdown link of thin silicon

  20. Free form CMOS electronics: Physically flexible and stretchable

    KAUST Repository

    Hussain, Muhammad Mustafa

    2015-12-07

    Free form (physically flexible and stretchable) electronics can be used for applications which are unexplored today due to the rigid and brittle nature of the state-of-the-art electronics. Therefore, we show integration strategy to rationally design materials, processes and devices to transform advanced complementary metal oxide semiconductor (CMOS) electronics into flexible and stretchable one while retaining their high performance, energy efficiency, ultra-large-scale-integration (ULSI) density, reliability and performance over cost benefit to expand its applications for wearable, implantable and Internet-of-Everything electronics.

  1. Integration of mask and silicon metrology in DFM

    Science.gov (United States)

    Matsuoka, Ryoichi; Mito, Hiroaki; Sugiyama, Akiyuki; Toyoda, Yasutaka

    2009-03-01

    We have developed a highly integrated method of mask and silicon metrology. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used in mask CD-SEM and silicon CD-SEM. We have inspected the high accuracy, stability and reproducibility in the experiments of integration. The accuracy is comparable with that of the mask and silicon CD-SEM metrology. In this report, we introduce the experimental results and the application. As shrinkage of design rule for semiconductor device advances, OPC (Optical Proximity Correction) goes aggressively dense in RET (Resolution Enhancement Technology). However, from the view point of DFM (Design for Manufacturability), the cost of data process for advanced MDP (Mask Data Preparation) and mask producing is a problem. Such trade-off between RET and mask producing is a big issue in semiconductor market especially in mask business. Seeing silicon device production process, information sharing is not completely organized between design section and production section. Design data created with OPC and MDP should be linked to process control on production. But design data and process control data are optimized independently. Thus, we provided a solution of DFM: advanced integration of mask metrology and silicon metrology. The system we propose here is composed of followings. 1) Design based recipe creation: Specify patterns on the design data for metrology. This step is fully automated since they are interfaced with hot spot coordinate information detected by various verification methods. 2) Design based image acquisition: Acquire the images of mask and silicon automatically by a recipe based on the pattern design of CD-SEM.It is a robust automated step because a wide range of design data is used for the image acquisition. 3) Contour profiling and GDS data generation: An image profiling process is applied to the acquired image based

  2. Stretchable Conductive Composites from Cu-Ag Nanowire Felt.

    Science.gov (United States)

    Catenacci, Matthew J; Reyes, Christopher; Cruz, Mutya A; Wiley, Benjamin J

    2018-03-21

    Materials that retain a high conductivity under strain are essential for wearable electronics. This article describes a conductive, stretchable composite consisting of a Cu-Ag core-shell nanowire felt infiltrated with a silicone elastomer. This composite exhibits a retention of conductivity under strain that is superior to any composite with a conductivity greater than 1000 S cm -1 . This work also shows how the mechanical properties, conductivity, and deformation mechanism of the composite changes as a function of the stiffness of the silicone matrix. The retention of conductivity under strain was found to decrease as the Young's modulus of the matrix increased. This was attributed to void formation as a result of debonding between the nanowire felt and the elastomer. The nanowire composite was also patterned to create serpentine circuits with a stretchability of 300%.

  3. Stretchable piezoelectric nanocomposite generator.

    Science.gov (United States)

    Park, Kwi-Il; Jeong, Chang Kyu; Kim, Na Kyung; Lee, Keon Jae

    2016-01-01

    Piezoelectric energy conversion that generate electric energy from ambient mechanical and vibrational movements is promising energy harvesting technology because it can use more accessible energy resources than other renewable natural energy. In particular, flexible and stretchable piezoelectric energy harvesters which can harvest the tiny biomechanical motions inside human body into electricity properly facilitate not only the self-powered energy system for flexible and wearable electronics but also sensitive piezoelectric sensors for motion detectors and in vivo diagnosis kits. Since the piezoelectric ZnO nanowires (NWs)-based energy harvesters (nanogenerators) were proposed in 2006, many researchers have attempted the nanogenerator by using the various fabrication process such as nanowire growth, electrospinning, and transfer techniques with piezoelectric materials including polyvinylidene fluoride (PVDF) polymer and perovskite ceramics. In 2012, the composite-based nanogenerators were developed using simple, low-cost, and scalable methods to overcome the significant issues with previously-reported energy harvester, such as insufficient output performance and size limitation. This review paper provides a brief overview of flexible and stretchable piezoelectric nanocomposite generator for realizing the self-powered energy system with development history, power performance, and applications.

  4. Stretchable piezoelectric nanocomposite generator

    Science.gov (United States)

    Park, Kwi-Il; Jeong, Chang Kyu; Kim, Na Kyung; Lee, Keon Jae

    2016-06-01

    Piezoelectric energy conversion that generate electric energy from ambient mechanical and vibrational movements is promising energy harvesting technology because it can use more accessible energy resources than other renewable natural energy. In particular, flexible and stretchable piezoelectric energy harvesters which can harvest the tiny biomechanical motions inside human body into electricity properly facilitate not only the self-powered energy system for flexible and wearable electronics but also sensitive piezoelectric sensors for motion detectors and in vivo diagnosis kits. Since the piezoelectric ZnO nanowires (NWs)-based energy harvesters (nanogenerators) were proposed in 2006, many researchers have attempted the nanogenerator by using the various fabrication process such as nanowire growth, electrospinning, and transfer techniques with piezoelectric materials including polyvinylidene fluoride (PVDF) polymer and perovskite ceramics. In 2012, the composite-based nanogenerators were developed using simple, low-cost, and scalable methods to overcome the significant issues with previously-reported energy harvester, such as insufficient output performance and size limitation. This review paper provides a brief overview of flexible and stretchable piezoelectric nanocomposite generator for realizing the self-powered energy system with development history, power performance, and applications.

  5. Skin electronics from scalable fabrication of an intrinsically stretchable transistor array

    Science.gov (United States)

    Wang, Sihong; Xu, Jie; Wang, Weichen; Wang, Ging-Ji Nathan; Rastak, Reza; Molina-Lopez, Francisco; Chung, Jong Won; Niu, Simiao; Feig, Vivian R.; Lopez, Jeffery; Lei, Ting; Kwon, Soon-Ki; Kim, Yeongin; Foudeh, Amir M.; Ehrlich, Anatol; Gasperini, Andrea; Yun, Youngjun; Murmann, Boris; Tok, Jeffery B.-H.; Bao, Zhenan

    2018-03-01

    Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring, medical treatment, medical implants and biological studies, and for technologies that include human-machine interfaces, soft robotics and augmented reality. Rendering such electronics soft and stretchable—like human skin—would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array. We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy: such materials have been reported, but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current-voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a

  6. Kirigami-based stretchable lithium-ion batteries

    Science.gov (United States)

    Song, Zeming; Wang, Xu; Lv, Cheng; An, Yonghao; Liang, Mengbing; Ma, Teng; He, David; Zheng, Ying-Jie; Huang, Shi-Qing; Yu, Hongyu; Jiang, Hanqing

    2015-01-01

    We have produced stretchable lithium-ion batteries (LIBs) using the concept of kirigami, i.e., a combination of folding and cutting. The designated kirigami patterns have been discovered and implemented to achieve great stretchability (over 150%) to LIBs that are produced by standardized battery manufacturing. It is shown that fracture due to cutting and folding is suppressed by plastic rolling, which provides kirigami LIBs excellent electrochemical and mechanical characteristics. The kirigami LIBs have demonstrated the capability to be integrated and power a smart watch, which may disruptively impact the field of wearable electronics by offering extra physical and functionality design spaces. PMID:26066809

  7. Integrated nanoscale silicon sensors using top-down fabrication

    Science.gov (United States)

    Elibol, O. H.; Morisette, D.; Akin, D.; Denton, J. P.; Bashir, R.

    2003-12-01

    Semiconductor device-based sensing of chemical and biological entities has been demonstrated through the use of micro- and nanoscale field-effect devices and close variants. Although carbon nanotubes and silicon nanowires have been demonstrated as single molecule biosensors, the fabrication methods that have been used for creating these devices are typically not compatible with modern semiconductor manufacturing techniques and their large scale integration is problematic. These shortcomings are addressed by recent advancements in microelectronic fabrication techniques which resulted in the realization of nanowire-like structures. Here we report a method to fabricate silicon nanowires at precise locations using such techniques. Our method allows for the realization of truly integrated sensors capable of production of dense arrays. Sensitivity of these devices to changes in the ambient gas composition is also shown.

  8. Integration of functional complex oxide nanomaterials on silicon

    Directory of Open Access Journals (Sweden)

    Jose Manuel eVila-Fungueiriño

    2015-06-01

    Full Text Available The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE. Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

  9. Bio-Inspired Stretchable Absolute Pressure Sensor Network.

    Science.gov (United States)

    Guo, Yue; Li, Yu-Hung; Guo, Zhiqiang; Kim, Kyunglok; Chang, Fu-Kuo; Wang, Shan X

    2016-01-02

    A bio-inspired absolute pressure sensor network has been developed. Absolute pressure sensors, distributed on multiple silicon islands, are connected as a network by stretchable polyimide wires. This sensor network, made on a 4'' wafer, has 77 nodes and can be mounted on various curved surfaces to cover an area up to 0.64 m × 0.64 m, which is 100 times larger than its original size. Due to Micro Electro-Mechanical system (MEMS) surface micromachining technology, ultrathin sensing nodes can be realized with thicknesses of less than 100 µm. Additionally, good linearity and high sensitivity (~14 mV/V/bar) have been achieved. Since the MEMS sensor process has also been well integrated with a flexible polymer substrate process, the entire sensor network can be fabricated in a time-efficient and cost-effective manner. Moreover, an accurate pressure contour can be obtained from the sensor network. Therefore, this absolute pressure sensor network holds significant promise for smart vehicle applications, especially for unmanned aerial vehicles.

  10. Integrated Silicon Carbide Power Electronic Block

    Energy Technology Data Exchange (ETDEWEB)

    Radhakrishnan, Rahul [Global Power Technologies Group, Inc., Lake Forest, CA (United States)

    2017-11-07

    Research involved in this project is aimed at monolithically integrating an anti-parallel diode to the SiC MOSFET switch, so as to avoid having to use an external anti-parallel diode in power circuit applications. SiC MOSFETs are replacing Si MOSFETs and IGBTs in many applications, yet the high bandgap of the body diode in SiC MOSFET and consequent need for an external anti-parallel diode increases costs and discourages circuit designers from adopting this technology. Successful demonstration and subsequent commercialization of this technology would reduce SiC MOSFET cost and additionally reduce component count as well as other costs at the power circuit level. In this Phase I project, we have created multiple device designs, set up a process for device fabrication at the 150mm SiC foundry XFAB Texas, demonstrated unit-processes for device fabrication in short loops and started full flow device fabrication. Key findings of the development activity were: The limits of coverage of photoresist over the topology of thick polysilicon structures covered with oxide, which required larger feature dimensions to overcome; and The insufficient process margin for removing oxide spacers from polysilicon field ring features which could result in loss of some features without further process development No fundamental obstacles were uncovered during the process development. Given sufficient time for additional development it is likely that processes could be tuned to realize the monolithically integrated SiC JBS diode and MOSFET. Sufficient funds were not available in this program to resolve processing difficulties and fabricate the devices.

  11. Feasibility studies of microelectrode silicon detectors with integrated electronics

    International Nuclear Information System (INIS)

    Dalla Betta, G.-F.; Batignani, G.; Bettarini, S.; Boscardin, M.; Bosisio, L.; Carpinelli, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Lusiani, A.; Manghisoni, M.; Pignatel, G.U.; Rama, M.; Ratti, L.; Re, V.; Sandrelli, F.; Speziali, V.; Svelto, F.; Zorzi, N.

    2002-01-01

    We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced

  12. Environmental life cycle assessment of roof-integrated flexible amorphous silicon/nanocrystalline silicon solar cell laminate

    NARCIS (Netherlands)

    Mohr, N.J.; Meijer, A.; Huijbregts, M.A.J.; Reijnders, L.

    2013-01-01

    This paper presents an environmental life cycle assessment of a roof-integrated flexible solar cell laminate with tandem solar cells composed of amorphous silicon/nanocrystalline silicon (a-Si/nc-Si). The a-Si/nc-Si cells are considered to have 10% conversion efficiency. Their expected service life

  13. Lateral buckling and mechanical stretchability of fractal interconnects partially bonded onto an elastomeric substrate

    International Nuclear Information System (INIS)

    Fu, Haoran; Xu, Sheng; Rogers, John A.; Xu, Renxiao; Huang, Yonggang; Jiang, Jianqun; Zhang, Yihui

    2015-01-01

    Fractal-inspired designs for interconnects that join rigid, functional devices can ensure mechanical integrity in stretchable electronic systems under extreme deformations. The bonding configuration of such interconnects with the elastomer substrate is crucial to the resulting deformation modes, and therefore the stretchability of the entire system. In this study, both theoretical and experimental analyses are performed for postbuckling of fractal serpentine interconnects partially bonded to the substrate. The deformation behaviors and the elastic stretchability of such systems are systematically explored, and compared to counterparts that are not bonded at all to the substrate

  14. Cobalt micro-magnet integration on silicon MOS quantum dots

    Science.gov (United States)

    Camirand Lemyre, Julien; Rochette, Sophie; Anderson, John; Manginell, Ronald P.; Pluym, Tammy; Ward, Dan; Carroll, Malcom S.; Pioro-Ladrière, Michel

    Integration of cobalt micro-magnets on silicon metal-oxide-semiconductor (MOS) quantum dot devices has been investigated. The micro-magnets are fabricated in a lift-off process with e-beam lithography and deposited directly on top of an etched poly-silicon gate stack. Among the five resist stacks tested, one is found to be compatible with our MOS specific materials (Si and SiO2) . Moreover, devices with and without additional Al2O3 insulating layer show no additional gate leakage after processing. Preliminary transport data indicates electrostatic stability of our devices with integrated magnets. This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  15. Efficient colored silicon solar modules using integrated resonant dielectric nanoscatterers

    Science.gov (United States)

    Neder, Verena; Luxembourg, Stefan L.; Polman, Albert

    2017-08-01

    We demonstrate photovoltaic modules with a bright green color based on silicon heterojunction solar cells integrated with arrays of light scattering dielectric nanoscatterers. Dense arrays of crystalline silicon nanocylinders, 100-120 nm wide, 240 nm tall, and 325 nm pitch, are made onto module cover slides using substrate-conformal soft-imprint lithography. Strong electric and magnetic dipolar Mie resonances with a narrow linewidth (Q ˜ 30) cause strong (35%-40%) specular light scattering on resonance (˜540 nm). The green color is observed over a wide range of angles (8°-75°). As the resonant nanoscatterers are transparent for the major fraction of the incident solar spectrum, the relative loss in short-circuit current is only 10%-11%. The soft-imprinted nanopatterns can be applied on full-size solar modules and integrated with conventional module encapsulation. The dielectric Mie resonances can be controlled by geometry, opening up a road for designing efficient colorful or white building-integrated photovoltaics.

  16. Silicon compiler design of combinational and pipeline adder integrated circuits

    Science.gov (United States)

    Froede, A. O., III

    1985-06-01

    The architecture and structures used by the MacPitts silicon compiler to design integrated circuits are described, and the capabilities and limitations of the compiler are discussed. The performance of several combinational and pipeline adders designed by MacPitts and a hand-crafted pipeline adder are compared. Several different MacPitts design errors are documented. Tutorial material is presented to aid in using the MacPitts interpreter and to illustrate timing analysis of MacPitts-designed circuits using the program Crystal.

  17. Silicon-based photonic integrated circuit for label-free biosensing

    OpenAIRE

    Samusenko, Alina

    2016-01-01

    Silicon-based Photonic Integrated Circuit (PIC) is a device that integrates several optical components using the mature semiconductor technology platform, developed through years for the needs of electronic integrated circuits. In recent years, silicon PICs have been demonstrated as a powerful platform for biosensing systems - devices which play an omnipresent role in such essential life aspects as health care, environmental monitoring, food safety, etc. The growing importance of silicon phot...

  18. Metal/Polymer Based Stretchable Antenna for Constant Frequency Far-Field Communication in Wearable Electronics

    KAUST Repository

    Hussain, Aftab M.

    2015-10-06

    Body integrated wearable electronics can be used for advanced health monitoring, security, and wellness. Due to the complex, asymmetric surface of human body and atypical motion such as stretching in elbow, finger joints, wrist, knee, ankle, etc. electronics integrated to body need to be physically flexible, conforming, and stretchable. In that context, state-of-the-art electronics are unusable due to their bulky, rigid, and brittle framework. Therefore, it is critical to develop stretchable electronics which can physically stretch to absorb the strain associated with body movements. While research in stretchable electronics has started to gain momentum, a stretchable antenna which can perform far-field communications and can operate at constant frequency, such that physical shape modulation will not compromise its functionality, is yet to be realized. Here, a stretchable antenna is shown, using a low-cost metal (copper) on flexible polymeric platform, which functions at constant frequency of 2.45 GHz, for far-field applications. While mounted on a stretchable fabric worn by a human subject, the fabricated antenna communicated at a distance of 80 m with 1.25 mW transmitted power. This work shows an integration strategy from compact antenna design to its practical experimentation for enhanced data communication capability in future generation wearable electronics.

  19. Recent developments of truly stretchable thin film electronic and optoelectronic devices.

    Science.gov (United States)

    Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

    2018-03-29

    Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

  20. Single crystal ternary oxide ferroelectric integration with Silicon

    Science.gov (United States)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  1. Hybrid Integrated Silicon Microfluidic Platform for Fluorescence Based Biodetection

    Directory of Open Access Journals (Sweden)

    André Darveau

    2007-09-01

    Full Text Available The desideratum to develop a fully integrated Lab-on-a-chip device capable ofrapid specimen detection for high throughput in-situ biomedical diagnoses and Point-of-Care testing applications has called for the integration of some of the novel technologiessuch as the microfluidics, microphotonics, immunoproteomics and Micro ElectroMechanical Systems (MEMS. In the present work, a silicon based microfluidic device hasbeen developed for carrying out fluorescence based immunoassay. By hybrid attachment ofthe microfluidic device with a Spectrometer-on-chip, the feasibility of synthesizing anintegrated Lab-on-a-chip type device for fluorescence based biosensing has beendemonstrated. Biodetection using the microfluidic device has been carried out usingantigen sheep IgG and Alexafluor-647 tagged antibody particles and the experimentalresults prove that silicon is a compatible material for the present application given thevarious advantages it offers such as cost-effectiveness, ease of bulk microfabrication,superior surface affinity to biomolecules, ease of disposability of the device etc., and is thussuitable for fabricating Lab-on-a-chip type devices.

  2. Ultratransparent and stretchable graphene electrodes

    Science.gov (United States)

    Liu, Nan; Chortos, Alex; Lei, Ting; Jin, Lihua; Kim, Taeho Roy; Bae, Won-Gyu; Zhu, Chenxin; Wang, Sihong; Pfattner, Raphael; Chen, Xiyuan; Sinclair, Robert; Bao, Zhenan

    2017-01-01

    Two-dimensional materials, such as graphene, are attractive for both conventional semiconductor applications and nascent applications in flexible electronics. However, the high tensile strength of graphene results in fracturing at low strain, making it challenging to take advantage of its extraordinary electronic properties in stretchable electronics. To enable excellent strain-dependent performance of transparent graphene conductors, we created graphene nanoscrolls in between stacked graphene layers, referred to as multilayer graphene/graphene scrolls (MGGs). Under strain, some scrolls bridged the fragmented domains of graphene to maintain a percolating network that enabled excellent conductivity at high strains. Trilayer MGGs supported on elastomers retained 65% of their original conductance at 100% strain, which is perpendicular to the direction of current flow, whereas trilayer films of graphene without nanoscrolls retained only 25% of their starting conductance. A stretchable all-carbon transistor fabricated using MGGs as electrodes exhibited a transmittance of >90% and retained 60% of its original current output at 120% strain (parallel to the direction of charge transport). These highly stretchable and transparent all-carbon transistors could enable sophisticated stretchable optoelectronics. PMID:28913422

  3. 3D Printed Stretchable Capacitive Sensors for Highly Sensitive Tactile and Electrochemical Sensing.

    Science.gov (United States)

    Li, Kai; Wei, Hong; Liu, Wenguang; Meng, Hong; Zhang, Peixin; Yan, Chaoyi

    2018-02-15

    Developments of innovative strategies for the fabrication of stretchable sensors are of crucial importance for their applications in wearable electronic systems. In this work, we report the successful fabrication of stretchable capacitive sensors using a novel 3D printing method for highly sensitive tactile and electrochemical sensing applications. Unlike conventional lithographic or templated methods, the programmable 3D printing technique can fabricate complex device structures in a cost-effective and facile manner. We designed and fabricated stretchable capacitive sensors with interdigital and double-vortex designs and demonstrated their successful applications as tactile and electrochemical sensors. Especially, our stretchable sensors exhibited a detection limit as low as 1×10-6 M for NaCl aqueous solution, which could have significant potential applications when integrated in electronics skins. © 2018 IOP Publishing Ltd.

  4. Flexible, Stretchable, and Transparent Planar Microsupercapacitors Based on 3D Porous Laser-Induced Graphene.

    Science.gov (United States)

    Song, Weixing; Zhu, Jianxiong; Gan, Baoheng; Zhao, Shuyu; Wang, Hui; Li, Congju; Wang, Jie

    2018-01-01

    The graphene with 3D porous network structure is directly laser-induced on polyimide sheets at room temperature in ambient environment by an inexpensive and one-step method, then transferred to silicon rubber substrate to obtain highly stretchable, transparent, and flexible electrode of the all-solid-state planar microsupercapacitors. The electrochemical capacitance properties of the graphene electrodes are further enhanced by nitrogen doping and with conductive poly(3,4-ethylenedioxythiophene) coating. With excellent flexibility, stretchability, and capacitance properties, the planar microsupercapacitors present a great potential in fashionable and comfortable designs for wearable electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Nonlinear Silicon Waveguides for Integrated Fiber Laser Systems

    Science.gov (United States)

    Wong, Chi Yan

    Silicon-on-insulator (SOI) based photonic devices have attracted great interest from photonics community because of its compatibility with state-of-the-art CMOS fabrication processes and its potential of making energy efficient and low cost photonic integrated circuits (PICs) for high bandwidth optical interconnects and integrated optical sensors. Wavelength division multiplexing (WDM) is already widely used in optical communications and is also of interest for optical sensors, providing advantages of low cost, and high speed compared with single wavelength approach. However, the cost and the bulkiness of WDM systems increase proportionally with the number of wavelengths if conventional external laser source is used. Therefore, low cost and compact laser source with stable and high line quality is of great interest for integrated sensors. In this thesis, we investigate the incorporation of silicon photonic devices as intracavity elements in fiber lasers for various applications. Therefore, the high flexibly and rich functionalities of fiber lasers can be directly used in the PIC. Also, high-speed feedback control of the cavity becomes possible. The possibility of applying nonlinear SOI waveguides to fiber lasers is investigated. We propose and demonstrate a multiwavelength erbium-doped fiber laser stabilized by four-wave mixing (FWM) in a nonlinear SOI waveguide. Such multiwavelength lasers are potentially suitable for WDM sensing. The wavelength selectivity was achieved by an intracavity Fabry-Perot comb filter. Making use of the nonlinearity of the SOI waveguide, a multiwavelength laser with six output wavelengths at 0.8 nm spacing was achieved. We study a passive mode-locked erbium-doped fiber ring laser based on a nonlinear SOI microring resonator (MRR). By using the MRR as the comb filter and the nonlinear medium, a stable mode-locked pulse train at 100 GHz was produced by filter-driven four-wave mixing. Such lasers can act as high repetition rate optical

  6. Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

    OpenAIRE

    Liao, M.; Chen, S.; Huo, S.; Chen, S.; Wu, J.; Tang, M.; Kennedy, K.; Li, W.; Kumar, S.; Martin, M.; Baron, T.; Jin, C.; Ross, I.; Seeds, A.; Liu, H.

    2017-01-01

    In this paper, we report monolithically integrated IIIV\\ud quantum dot (QD) light-emitting sources on silicon substrates\\ud for silicon photonics. We describe the first practical InAs/GaAs\\ud QD lasers monolithically grown on an offcut silicon (001) substrate\\ud due to the realization of high quality III-V epilayers on silicon with\\ud low defect density, indicating that the large material dissimilarity\\ud between III-Vs and silicon is no longer a fundamental barrier\\ud limiting monolithic gro...

  7. Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

    2016-01-01

    Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

  8. Highly stretchable and conductive fibers enabled by liquid metal dip-coating

    Science.gov (United States)

    Zhang, Qiang; Roach, Devin J.; Geng, Luchao; Chen, Haosen; Qi, H. Jerry; Fang, Daining

    2018-03-01

    Highly stretchable and conductive fibers have been fabricated by dip-coating of a layer of liquid metal (eutectic gallium indium, EGaIn) on printed silicone elastomer filaments. This fabrication method exploits a nanolayer of oxide skin that rapidly forms on the surface of EGaIn when exposed to air. Through dip-coating, the sticky nature of the oxide skin leads to the formation of a thin EGaIn coating (˜5 μm thick) on the originally nonconductive filaments and renders these fibers excellent conductivity. Electrical characterization shows that the fiber resistance increases moderately as the fiber elongates but always maintains conductivity even when stretched by 800%. Besides this, these fibers possess good cyclic electrical stability with little degradation after hundreds of stretching cycles, which makes them an excellent candidate for stretchable conductors. We then demonstrate a highly stretchable LED circuit as well as a conductive stretchable net that extends the 1D fibers into a 2D configuration. These examples demonstrate potential applications for topologically complex stretchable electronics.

  9. Stretchable antenna for wearable electronics

    KAUST Repository

    Hussain, Muhammad Mustafa

    2017-04-13

    Various examples are provided for stretchable antennas that can be used for applications such as wearable electronics. In one example, a stretchable antenna includes a flexible support structure including a lateral spring section having a proximal end and at a distal end; a metallic antenna disposed on at least a portion of the lateral spring section, the metallic antenna extending along the lateral spring section from the proximal end; and a metallic feed coupled to the metallic antenna at the proximal end of the lateral spring section. In another example, a method includes patterning a polymer layer disposed on a substrate to define a lateral spring section; disposing a metal layer on at least a portion of the lateral spring section, the metal layer forming an antenna extending along the portion of the lateral spring section; and releasing the polymer layer and the metal layer from the substrate.

  10. Progress and Prospects in Stretchable Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    Wang Jiangxin

    2017-03-01

    Full Text Available Stretchable electroluminescent (EL devices are a new form of mechanically deformable electronics that are gaining increasing interests and believed to be one of the essential technologies for next generation lighting and display applications. Apart from the simple bending capability in flexible EL devices, the stretchable EL devices are required to withstand larger mechanical deformations and accommodate stretching strain beyond 10%. The excellent mechanical conformability in these devices enables their applications in rigorous mechanical conditions such as flexing, twisting, stretching, and folding.The stretchable EL devices can be conformably wrapped onto arbitrary curvilinear surface and respond seamlessly to the external or internal forces, leading to unprecedented applications that cannot be addressed with conventional technologies. For example, they are in demand for wide applications in biomedical-related devices or sensors and soft interactive display systems, including activating devices for photosensitive drug, imaging apparatus for internal tissues, electronic skins, interactive input and output devices, robotics, and volumetric displays. With increasingly stringent demand on the mechanical requirements, the fabrication of stretchable EL device is encountering many challenges that are difficult to resolve. In this review, recent progresses in the stretchable EL devices are covered with a focus on the approaches that are adopted to tackle materials and process challenges in stretchable EL devices and delineate the strategies in stretchable electronics. We first introduce the emission mechanisms that have been successfully demonstrated on stretchable EL devices. Limitations and advantages of the different mechanisms for stretchable EL devices are also discussed. Representative reports are reviewed based on different structural and material strategies. Unprecedented applications that have been enabled by the stretchable EL devices are

  11. Progress and Prospects in Stretchable Electroluminescent Devices

    Science.gov (United States)

    Wang, Jiangxin; Lee, Pooi See

    2017-03-01

    Stretchable electroluminescent (EL) devices are a new form of mechanically deformable electronics that are gaining increasing interests and believed to be one of the essential technologies for next generation lighting and display applications. Apart from the simple bending capability in flexible EL devices, the stretchable EL devices are required to withstand larger mechanical deformations and accommodate stretching strain beyond 10%. The excellent mechanical conformability in these devices enables their applications in rigorous mechanical conditions such as flexing, twisting, stretching, and folding.The stretchable EL devices can be conformably wrapped onto arbitrary curvilinear surface and respond seamlessly to the external or internal forces, leading to unprecedented applications that cannot be addressed with conventional technologies. For example, they are in demand for wide applications in biomedical-related devices or sensors and soft interactive display systems, including activating devices for photosensitive drug, imaging apparatus for internal tissues, electronic skins, interactive input and output devices, robotics, and volumetric displays. With increasingly stringent demand on the mechanical requirements, the fabrication of stretchable EL device is encountering many challenges that are difficult to resolve. In this review, recent progresses in the stretchable EL devices are covered with a focus on the approaches that are adopted to tackle materials and process challenges in stretchable EL devices and delineate the strategies in stretchable electronics. We first introduce the emission mechanisms that have been successfully demonstrated on stretchable EL devices. Limitations and advantages of the different mechanisms for stretchable EL devices are also discussed. Representative reports are reviewed based on different structural and material strategies. Unprecedented applications that have been enabled by the stretchable EL devices are reviewed. Finally, we

  12. Highly Stretchable Non-volatile Nylon Thread Memory.

    Science.gov (United States)

    Kang, Ting-Kuo

    2016-04-13

    Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene- PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 10(3) is maintained for a retention time of 10(6)s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

  13. Highly Stretchable Non-volatile Nylon Thread Memory

    Science.gov (United States)

    Kang, Ting-Kuo

    2016-04-01

    Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

  14. Flexible and stretchable power sources for wearable electronics.

    Science.gov (United States)

    Zamarayeva, Alla M; Ostfeld, Aminy E; Wang, Michael; Duey, Jerica K; Deckman, Igal; Lechêne, Balthazar P; Davies, Greg; Steingart, Daniel A; Arias, Ana Claudia

    2017-06-01

    Flexible and stretchable power sources represent a key technology for the realization of wearable electronics. Developing flexible and stretchable batteries with mechanical endurance that is on par with commercial standards and offer compliance while retaining safety remains a significant challenge. We present a unique approach that demonstrates mechanically robust, intrinsically safe silver-zinc batteries. This approach uses current collectors with enhanced mechanical design, such as helical springs and serpentines, as a structural support and backbone for all battery components. We show wire-shaped batteries based on helical band springs that are resilient to fatigue and retain electrochemical performance over 17,000 flexure cycles at a 0.5-cm bending radius. Serpentine-shaped batteries can be stretched with tunable degree and directionality while maintaining their specific capacity. Finally, the batteries are integrated, as a wearable device, with a photovoltaic module that enables recharging of the batteries.

  15. A Stretchable Alternating Current Electroluminescent Fiber

    Directory of Open Access Journals (Sweden)

    Dan Hu

    2018-01-01

    Full Text Available Flexible, stretchable electroluminescent fibers are of significance to meet the escalating requirements of increasing complexity and multifunctionality of smart electronics. We report a stretchable alternating current electroluminescent (ACEL fiber by a low-cost and all solution-processed scalable process. The ACEL fiber provides high stretchability, decent light-emitting performance, with excellent stability and nearly zero hysteresis. It can be stretched up to 80% strain. Our ACEL fiber device maintained a stable luminance for over 6000 stretch-release cycles at 50% strain. The mechanical stretchability and optical stability of our ACEL fiber device provides new possibilities towards next-generation stretchable displays, electronic textiles, advanced biomedical imaging and lighting, conformable visual readouts in arbitrary shapes, and novel health-monitoring devices.

  16. Integrated nanophotonic frequency shifter on the silicon-organic hybrid (SOH) platform for laser vibrometry

    International Nuclear Information System (INIS)

    Lauermann, M.; Weimann, C.; Palmer, R.; Schindler, P. C.; Koeber, S.; Freude, W.; Koos, C.; Rembe, C.

    2014-01-01

    We demonstrate a waveguide-based frequency shifter on the silicon photonic platform, enabling frequency shifts up to 10 GHz. The device is realized by silicon-organic hybrid (SOH) integration. Temporal shaping of the drive signal allows the suppression of spurious side-modes by more than 23 dB

  17. 75 FR 11939 - Integrated Silicon Solution, Inc. (ISSI); San Jose, CA; Notice of Termination of Investigation

    Science.gov (United States)

    2010-03-12

    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF LABOR Employment and Training Administration Integrated Silicon Solution, Inc. (ISSI); San Jose, CA; Notice of... Silicon Solution, Inc., San Jose, California. The petitioner has requested that the petition be withdrawn...

  18. Enhanced piezoelectricity and stretchability in energy harvesting devices fabricated from buckled PZT ribbons.

    Science.gov (United States)

    Qi, Yi; Kim, Jihoon; Nguyen, Thanh D; Lisko, Bozhena; Purohit, Prashant K; McAlpine, Michael C

    2011-03-09

    The development of a method for integrating highly efficient energy conversion materials onto soft, biocompatible substrates could yield breakthroughs in implantable or wearable energy harvesting systems. Of particular interest are devices which can conform to irregular, curved surfaces, and operate in vital environments that may involve both flexing and stretching modes. Previous studies have shown significant advances in the integration of highly efficient piezoelectric nanocrystals on flexible and bendable substrates. Yet, such inorganic nanomaterials are mechanically incompatible with the extreme elasticity of elastomeric substrates. Here, we present a novel strategy for overcoming these limitations, by generating wavy piezoelectric ribbons on silicone rubber. Our results show that the amplitudes in the waves accommodate order-of-magnitude increases in maximum tensile strain without fracture. Further, local probing of the buckled ribbons reveals an enhancement in the piezoelectric effect of up to 70%, thus representing the highest reported piezoelectric response on a stretchable medium. These results allow for the integration of energy conversion devices which operate in stretching mode via reversible deformations in the wavy/buckled ribbons.

  19. Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

    CERN Document Server

    Radamson, Henry

    2014-01-01

    Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

  20. Crystalline Silicon Interconnected Strips (XIS). Introduction to a New, Integrated Device and Module Concept

    Energy Technology Data Exchange (ETDEWEB)

    Van Roosmalen, J.; Bronsveld, P.; Mewe, A.; Janssen, G.; Stodolny, M.; Cobussen-Pool, E.; Bennett, I.; Weeber, A.; Geerligs, B. [ECN Solar Energy, P.O. Box 1, NL-1755 ZG, Petten (Netherlands)

    2012-06-15

    A new device concept for high efficiency, low cost, wafer based silicon solar cells is introduced. To significantly lower the costs of Si photovoltaics, high efficiencies and large reductions of metals and silicon costs are required. To enable this, the device architecture was adapted into low current devices by applying thin silicon strips, to which a special high efficiency back-contact heterojunction cell design was applied. Standard industrial production processes can be used for our fully integrated cell and module design, with a cost reduction potential below 0.5 euro/Wp. First devices have been realized demonstrating the principle of a series connected back contact hybrid silicon heterojunction module concept.

  1. Fabrication and modeling of stretchable conductors for traumatic brain injury research

    Science.gov (United States)

    Cao, Wenzhe

    Stretchable electronics are an emergent class of electronics that can retain their electric functionality under large mechanical deformation, such as stretching, bending and compression. Like traditional electric circuits, stretchable electronics rely on electrical conductors, but in this specific instance the conductors must also be stretchable. This thesis research had three goals: (1) fabricate elastically stretchable conductors that retain their electrical conductance when stretched by tens of percent of strain; (2) understand the underlying stretching mechanism of gold conductors on polydimethylsiloxane (PDMS) substrates; (3) produce a special device---a stretchable microelectrode array, which contains a matrix of stretchable conductors that enables a new approach to studying traumatic brain injury. We first developed and optimized the micro-fabrication process to make elastically stretchable thin gold film conductors on PDMS substrates. The conductors can retain electrical conduction while being stretched reversibly to 140% uniaxially and 16% radially. We further developed a fabrication process to encapsulate the conductors with either a commercially available photopatternable silicone (PPS) or with PDMS. 100 microm by 100 microm vias were patterned in the encapsulation layer to expose electrical contacts. PPS encapsulated conductors can be stretched uniaxially to 80%, and the PDMS encapsulated conductor can be stretched to ˜15%, without losing electrical conduction. We also introduced acrylate-based shape memory polymers (SMPs) as a new type of substrate for stretchable conductors. Their stiffness can be tuned by varying the monomer composition or by changing the ambient temperature. Thin gold film conductors deposited on pre-strained SMPs remain conductive when first stretched and then relaxed to their pre-strain value. Moreover, an SMP can also serve as a stretchable carrier to make pre-strained conductors on an overlying PDMS membrane. The resistance of

  2. Graphene-on-silicon hybrid plasmonic-photonic integrated circuits

    Science.gov (United States)

    Xiao, Ting-Hui; Cheng, Zhenzhou; Goda, Keisuke

    2017-06-01

    Graphene surface plasmons (GSPs) have shown great potential in biochemical sensing, thermal imaging, and optoelectronics. To excite GSPs, several methods based on the near-field optical microscope and graphene nanostructures have been developed in the past few years. However, these methods suffer from their bulky setups and low GSP-excitation efficiency due to the short interaction length between free-space vertical excitation light and the atomic layer of graphene. Here we present a CMOS-compatible design of graphene-on-silicon hybrid plasmonic-photonic integrated circuits that achieve the in-plane excitation of GSP polaritons as well as localized surface plasmon (SP) resonance. By employing a suspended membrane slot waveguide, our design is able to excite GSP polaritons on a chip. Moreover, by utilizing a graphene nanoribbon array, we engineer the transmission spectrum of the waveguide by excitation of localized SP resonance. Our theoretical and computational study paves a new avenue to enable, modulate, and monitor GSPs on a chip, potentially applicable for the development of on-chip electro-optic devices.

  3. Highly Stretchable and Conductive Superhydrophobic Coating for Flexible Electronics.

    Science.gov (United States)

    Su, Xiaojing; Li, Hongqiang; Lai, Xuejun; Chen, Zhonghua; Zeng, Xingrong

    2018-03-28

    Superhydrophobic materials integrating stretchability with conductivity have huge potential in the emerging application horizons such as wearable electronic sensors, flexible power storage apparatus, and corrosion-resistant circuits. Herein, a facile spraying method is reported to fabricate a durable superhydrophobic coating with excellent stretchable and electrical performance by combing 1-octadecanethiol-modified silver nanoparticles (M-AgNPs) with polystyrene- b-poly(ethylene- co-butylene)- b-polystyrene (SEBS) on a prestretched natural rubber (NR) substrate. The embedding of M-AgNPs in elastic SEBS matrix and relaxation of prestretched NR substrate construct hierarchical rough architecture and endow the coating with dense charge-transport pathways. The fabricated coating exhibits superhydrophobicity with water contact angle larger than 160° and a high conductivity with resistance of about 10 Ω. The coating not only maintains superhydrophobicity at low/high stretch ratio for the newly generated small/large protuberances but also responds to stretching and bending with good sensitivity, broad sensing range, and stable response cycles. Moreover, the coating exhibits excellent durability to heat and strong acid/alkali and mechanical forces including droplet impact, kneading, torsion, and repetitive stretching-relaxation. The findings conceivably stand out as a new tool to fabricate multifunctional superhydrophobic materials with excellent stretchability and conductivity for flexible electronics under wet or corrosive environments.

  4. Experimental Demonstration of 7 Tb/s Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    We demonstrate BER performance <10^-9 for a 1 Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers.......We demonstrate BER performance Tb/s/core transmission over 7-core fiber and SDM switching using a novel silicon photonic integrated circuit composed of a 7x7 fiber switch and low loss SDM couplers....

  5. Stretchable supercapacitors based on highly stretchable ionic liquid incorporated polymer electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Tamilarasan, P.; Ramaprabhu, S., E-mail: ramp@iitm.ac.in

    2014-11-14

    Mechanical stability of electrolyte in all-solid-state supercapacitor attains immense attention as it addresses safety aspects. In this study, we have demonstrated, the fabrication of stretchable supercapacitor based on stretchable electrolyte and hydrogen exfoliated graphene electrode. We synthesized ionic liquid incorporated stretchable Poly(methyl methacrylate) electrolyte which plays dual role as electrolyte and stretchable support for electrode material. The molecular vibration studies show composite nature of the electrolyte. At least four-fold stretchability has been observed along with good ionic conductivity (0.78 mS cm{sup −1} at 28 °C) for this polymer electrolyte. This stretchable supercapacitor shows a low equivalent series resistance (16 Ω) due to the compatibility at electrode–electrolyte interface. The performance of the device has been determined under strain as well. - Highlights: • A stretchable supercapacitor has been fabricated using stretchable electrolyte. • Here ionic liquid incorporated polymer plays dual role as electrolyte and stretchable support. • The developed device shows low equivalent series resistance. • The device has specific capacitance of 83 F g{sup −1}, at the specific current of 2.67 A g{sup −1}. • The energy density and power density of 25.7 Wh kg{sup −1} and 35.2 kW kg{sup −1}, respectively.

  6. Dispersed, porous nanoislands landing on stretchable nanocrack gold films: maintenance of stretchability and controllable impedance.

    Science.gov (United States)

    Liu, Zhiyuan; Yu, Mei; Lv, Junhui; Li, Yuchun; Yu, Zhe

    2014-08-27

    Stretchable electronic devices have great potential for serving as bioelectrical interfaces due to their better deformability and modulus match with biological organs. However, surface modification, which is usually applied to enhance the capability of sensing and stimulating, as well as biocompatibility, may cause problems since their stretchability highly depends on the surface structure. In this work, stretchable nanocrack gold (SNCG) electrodes were fabricated, which can be stretched by a maximum 120% uniaxial strain while maintaining their electrical conductivity. We found that the electrodes lost their stretchability after surface modification of an additional continuous platinum layer, which was found to selectively weld or fully cover the nanocracks, consequently eliminating its crack structure. To address this issue, we designed a complex structure of dispersed, porous nanoislands landing on the SNCG film, which was further demonstrated as capable of maintaining the stretchability of electrodes while allowing the reshaping of cracks. Moreover, stretchable microelectrode arrays were then developed with this complex structure. Animal experiments demonstrated their capability of conformally wrapping on a rat brain cortex and effectively monitoring an intracranial electroencephalogram under deformation. In addition, their impedance can be precisely controlled by modulating the dispersity, diameter, and aspect ratio of individual nanoislands. This complex structure has great potential for developing highly stretchable, multiplexing sensors, allowing stiff materials to land on a stretchable conducting surface with maintenance of stretchability and controllable functional area.

  7. Conductive Elastomers for Stretchable Electronics, Sensors and Energy Harvesters

    Directory of Open Access Journals (Sweden)

    Jin-Seo Noh

    2016-04-01

    Full Text Available There have been a wide variety of efforts to develop conductive elastomers that satisfy both mechanical stretchability and electrical conductivity, as a response to growing demands on stretchable and wearable devices. This article reviews the important progress in conductive elastomers made in three application fields of stretchable technology: stretchable electronics, stretchable sensors, and stretchable energy harvesters. Diverse combinations of insulating elastomers and non-stretchable conductive materials have been studied to realize optimal conductive elastomers. It is noted that similar material combinations and similar structures have often been employed in different fields of application. In terms of stretchability, cyclic operation, and overall performance, fields such as stretchable conductors and stretchable strain/pressure sensors have achieved great advancement, whereas other fields like stretchable memories and stretchable thermoelectric energy harvesting are in their infancy. It is worth mentioning that there are still obstacles to overcome for the further progress of stretchable technology in the respective fields, which include the simplification of material combination and device structure, securement of reproducibility and reliability, and the establishment of easy fabrication techniques. Through this review article, both the progress and obstacles associated with the respective stretchable technologies will be understood more clearly.

  8. PECASE: All-Optical Photonic Integrated Circuits in Silicon

    Science.gov (United States)

    2011-01-14

    linear and nonlinear optical properties of silicon micro/ nano cavities for chip-scale sensing and signal processing. To achieve this goal, in what...enhancing the linear and nonlinear optical properties of silicon micro/ nano cavities for chip- scale sensing and signal processing. To achieve this...During the TIRS measurements, the samples are placed on a TEC -equipped stage with a built-in thermistor to monitor the temperature. The transmission

  9. Stretchable bioelectronics for medical devices and systems

    CERN Document Server

    Ghaffari, Roozbeh; Kim, Dae-Hyeong

    2016-01-01

    This book highlights recent advances in soft and stretchable biointegrated electronics. A renowned group of authors address key ideas in the materials, processes, mechanics, and devices of soft and stretchable electronics; the wearable electronics systems; and bioinspired and implantable biomedical electronics. Among the topics discussed are liquid metals, stretchable and flexible energy sources, skin-like devices, in vitro neural recording, and more. Special focus is given to recent advances in extremely soft and stretchable bio-inspired electronics with real-world clinical studies that validate the technology. Foundational theoretical and experimental aspects are also covered in relation to the design and application of these biointegrated electronics systems. This is an ideal book for researchers, engineers, and industry professionals involved in developing healthcare devices, medical tools and related instruments relevant to various clinical practices.

  10. Integration of the End Cap TEC+ of the CMS Silicon Strip Tracker

    CERN Document Server

    Adler, Volker; Ageron, Michel; Agram, Jean-Laurent; Atz, Bernd; Barvich, Tobias; Baulieu, Guillaume; Beaumont, Willem; Beissel, Franz; Bergauer, Thomas; Berst, Jean-Daniel; Blüm, Peter; Bock, E; Bogelsbacher, F; de Boer, Wim; Bonnet, Jean-Luc; Bonnevaux, Alain; Boudoul, Gaelle; Bouhali, Othmane; Braunschweig, Wolfgang; Bremer, R; Brom, Jean-Marie; Butz, Erik; Chabanat, Eric; Chabert, Eric Christian; Clerbaux, Barbara; Contardo, Didier; De Callatay, Bernard; Dehm, Philip; Delaere, Christophe; Della Negra, Rodolphe; Dewulf, Jean-Paul; D'Hondt, Jorgen; Didierjean, Francois; Dierlamm, Alexander; Dirkes, Guido; Dragicevic, Marko; Drouhin, Frédéric; Ernenwein, Jean-Pierre; Esser, Hans; Estre, Nicolas; Fahrer, Manuel; Feld, Lutz; Fernández, J; Florins, Benoit; Flossdorf, Alexander; Flucke, Gero; Flügge, Günter; Fontaine, Jean-Charles; Freudenreich, Klaus; Frey, Martin; Friedl, Markus; Furgeri, Alexander; Giraud, Noël; Goerlach, Ulrich; Goorens, Robert; Graehling, Philippe; Grégoire, Ghislain; Gregoriev, E; Gross, Laurent; Hansel, S; Haroutunian, Roger; Hartmann, Frank; Heier, Stefan; Hermanns, Thomas; Heydhausen, Dirk; Heyninck, Jan; Hosselet, J; Hrubec, Josef; Jahn, Dieter; Juillot, Pierre; Kaminski, Jochen; Karpinski, Waclaw; Kaussen, Gordon; Keutgen, Thomas; Klanner, Robert; Klein, Katja; König, Stefan; Kosbow, M; Krammer, Manfred; Ledermann, Bernhard; Lemaître, Vincent; De Lentdecker, Gilles; Linn, Alexander; Lounis, Abdenour; Lübelsmeyer, Klaus; Lumb, Nicholas; Maazouzi, Chaker; Mahmoud, Tariq; Michotte, Daniel; Militaru, Otilia; Mirabito, Laurent; Müller, Thomas; Neukermans, Lionel; Ollivetto, C; Olzem, Jan; Ostapchuk, Andrey; Pandoulas, Demetrios; Pein, Uwe; Pernicka, Manfred; Perriès, Stephane; Piaseki, C; Pierschel, Gerhard; Piotrzkowski, Krzysztof; Poettgens, Michael; Pooth, Oliver; Rouby, Xavier; Sabellek, Andreas; Schael, Stefan; Schirm, Norbert; Schleper, Peter; Schmitz, Stefan Antonius; Schultz von Dratzig, Arndt; Siedling, Rolf; Simonis, Hans-Jürgen; Stahl, Achim; Steck, Pia; Steinbruck, G; Stoye, Markus; Strub, Roger; Tavernier, Stefaan; Teyssier, Daniel; Theel, Andreas; Trocmé, Benjamin; Udo, Fred; Van der Donckt, M; Van der Velde, C; Van Hove, Pierre; Vanlaer, Pascal; Van Lancker, Luc; Van Staa, Rolf; Vanzetto, Sylvain; Weber, Markus; Weiler, Thomas; Weseler, Siegfried; Wickens, John; Wittmer, Bruno; Wlochal, Michael; De Wolf, Eddi A; Zhukov, Valery; Zoeller, Marc Henning

    2009-01-01

    The silicon strip tracker of the CMS experiment has been completed and inserted into the CMS detector in late 2007. The largest sub-system of the tracker is its end cap system, comprising two large end caps (TEC) each containing 3200 silicon strip modules. To ease construction, the end caps feature a modular design: groups of about 20 silicon modules are placed on sub-assemblies called petals and these self-contained elements are then mounted into the TEC support structures. Each end cap consists of 144 petals, and the insertion of these petals into the end cap structure is referred to as TEC integration. The two end caps were integrated independently in Aachen (TEC+) and at CERN (TEC--). This note deals with the integration of TEC+, describing procedures for end cap integration and for quality control during testing of integrated sections of the end cap and presenting results from the testing.

  11. Effect of weak metallic contamination on silicon epitaxial layer and gate oxide integrity

    Energy Technology Data Exchange (ETDEWEB)

    Mello, D.; Coccorese, C.; Ferlito, E.; Sciuto, G.; Ricciari, R.; Barbarino, P.; Astuto, M. [STMicroelectronics, Physics Lab. Stradale primosole, 50 I-95121 Catania (Italy)

    2011-08-15

    The detection of metallic contaminants in microelectronics devices is one of the main issues in production line. In fact they could diffuse rapidly into the silicon bulk and establishing energy states into the silicon energy-band gap. The presence of trace of metals on the silicon surface can also degrade the gate oxide integrity, cause structural defect in silicon epitaxial layers or anomalies in silicon/gate oxide interface. Usually in semiconductor manufacturing superficial metallic contamination is monitored using Total X-ray Reflection Fluorescence spectroscopy (TXRF) and performing specific electrical measurements on dedicated capacitor. In this work a weak contamination, undetected by TXRF analysis, was revealed by Transmission Electron Microscopy (TEM) observing lattice damaging and Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) detecting an anomalous Na distribution in depth profile. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Single-Thread-Based Wearable and Highly Stretchable Triboelectric Nanogenerators and Their Applications in Cloth-Based Self-Powered Human-Interactive and Biomedical Sensing

    KAUST Repository

    Lai, Ying-Chih

    2016-11-03

    The development of wearable and large-area fabric energy harvester and sensor has received great attention due to their promising applications in next-generation autonomous and wearable healthcare technologies. Here, a new type of “single” thread-based triboelectric nanogenerator (TENG) and its uses in elastically textile-based energy harvesting and sensing have been demonstrated. The energy-harvesting thread composed by one silicone-rubber-coated stainless-steel thread can extract energy during contact with skin. With sewing the energy-harvesting thread into a serpentine shape on an elastic textile, a highly stretchable and scalable TENG textile is realized to scavenge various kinds of human-motion energy. The collected energy is capable to sustainably power a commercial smart watch. Moreover, the simplified single triboelectric thread can be applied in a wide range of thread-based self-powered and active sensing uses, including gesture sensing, human-interactive interfaces, and human physiological signal monitoring. After integration with microcontrollers, more complicated systems, such as wireless wearable keyboards and smart beds, are demonstrated. These results show that the newly designed single-thread-based TENG, with the advantage of interactive, responsive, sewable, and conformal features, can meet application needs of a vast variety of fields, ranging from wearable and stretchable energy harvesters to smart cloth-based articles.

  13. High-Density Stretchable Electrode Grids for Chronic Neural Recording.

    Science.gov (United States)

    Tybrandt, Klas; Khodagholy, Dion; Dielacher, Bernd; Stauffer, Flurin; Renz, Aline F; Buzsáki, György; Vörös, János

    2018-02-28

    Electrical interfacing with neural tissue is key to advancing diagnosis and therapies for neurological disorders, as well as providing detailed information about neural signals. A challenge for creating long-term stable interfaces between electronics and neural tissue is the huge mechanical mismatch between the systems. So far, materials and fabrication processes have restricted the development of soft electrode grids able to combine high performance, long-term stability, and high electrode density, aspects all essential for neural interfacing. Here, this challenge is addressed by developing a soft, high-density, stretchable electrode grid based on an inert, high-performance composite material comprising gold-coated titanium dioxide nanowires embedded in a silicone matrix. The developed grid can resolve high spatiotemporal neural signals from the surface of the cortex in freely moving rats with stable neural recording quality and preserved electrode signal coherence during 3 months of implantation. Due to its flexible and stretchable nature, it is possible to minimize the size of the craniotomy required for placement, further reducing the level of invasiveness. The material and device technology presented herein have potential for a wide range of emerging biomedical applications. © 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Material approaches to stretchable strain sensors.

    Science.gov (United States)

    Park, Jaeyoon; You, Insang; Shin, Sangbaie; Jeong, Unyong

    2015-04-27

    With the recent progress made in wearable electronics, devices now require high flexibility and stretchability up to large strain levels (typically larger than 30 % strain). Wearable strain sensors or deformable strain sensors have been gaining increasing research interest because of the rapid development of electronic skins and robotics and because of their biomedical applications. Conventional brittle strain sensors made of metals and piezoresistors are not applicable for such stretchable sensors. This Review summarizes recent advances in stretchable sensors and focuses on material aspects for high stretchability and sensitivity. It begins with a brief introduction to the Wheatstone bridge circuit of conventional resistive strain sensors. Then, studies on the manipulation of materials are reviewed, including waved structural approaches for making metals and semiconductors stretchable, the use of liquid metals, and conductive filler/elastomer composites by using percolation among the fillers. For capacitive strain sensors, the constant conductivity of the electrode is a key factor in obtaining reliable sensors. Possible approaches to developing capacitive strain sensors are presented. This Review concludes with a discussion on the major challenges and perspectives related to stretchable strain sensors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Integrated GaN photonic circuits on silicon (100) for second harmonic generation

    OpenAIRE

    Xiong, Chi; Pernice, Wolfram; Ryu, Kevin K.; Schuck, Carsten; Fong, King Y.; Palacios, Tomas; Tang, Hong X.

    2014-01-01

    We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \\{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and ...

  16. The CMS Silicon Strip Tracker from integration to start-up

    CERN Document Server

    Ciulli, V

    2008-01-01

    The CMS Silicon Strip Tracker (SST) integration has been completed. After an extensive period of testing with cosmic muons the detector is ready for the final installation inside the CMS magnet. This paper will review the integration procedures and the tests completed to ensure that SST performs according to specifications.

  17. Characterization of porous silicon integrated in liquid chromatography chips

    NARCIS (Netherlands)

    Tiggelaar, Roald M.; Verdoold, Vincent; Eghbali, H.; Desmet, G.; Gardeniers, Johannes G.E.

    2009-01-01

    Properties of porous silicon which are relevant for use of the material as a stationary phase in liquid chromatography chips, like porosity, pore size and specific surface area, were determined with high-resolution SEM and N2 adsorption–desorption isotherms. For the anodization conditions

  18. Integrated programmable photonic filter on the silicon -on- insulator platform

    DEFF Research Database (Denmark)

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe

    2014-01-01

    We propose and demonstrate a silicon - on - insulator (SOI) on - chip programmable filter based on a four - tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heater s. We further demonstrate...

  19. Mogul-Patterned Elastomeric Substrate for Stretchable Electronics.

    Science.gov (United States)

    Lee, Han-Byeol; Bae, Chan-Wool; Duy, Le Thai; Sohn, Il-Yung; Kim, Do-Il; Song, You-Joon; Kim, Youn-Jea; Lee, Nae-Eung

    2016-04-01

    A mogul-patterned stretchable substrate with multidirectional stretchability and minimal fracture of layers under high stretching is fabricated by double photolithography and soft lithography. Au layers and a reduced graphene oxide chemiresistor on a mogul-patterned poly(dimethylsiloxane) substrate are stable and durable under various stretching conditions. The newly designed mogul-patterned stretchable substrate shows great promise for stretchable electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Stretchable, Porous, and Conductive Energy Textiles

    KAUST Repository

    Hu, Liangbing

    2010-02-10

    Recently there is strong interest in lightweight, flexible, and wearable electronics to meet the technological demands of modern society. Integrated energy storage devices of this type are a key area that is still significantly underdeveloped. Here, we describe wearable power devices using everyday textiles as the platform. With an extremely simple "dipping and drying" process using single-walled carbon nanotube (SWNT) ink, we produced highly conductive textiles with conductivity of 125 S cm-1 and sheet resistance less than 1 Ω/sq. Such conductive textiles show outstanding flexibility and stretchability and demonstrate strong adhesion between the SWNTs and the textiles of interest. Supercapacitors made from these conductive textiles show high areal capacitance, up to 0.48F/cm2, and high specific energy. We demonstrate the loading of pseudocapacitor materials into these conductive textiles that leads to a 24-fold increase of the areal capacitance of the device. These highly conductive textiles can provide new design opportunities for wearable electronics and energy storage applications. © 2010 American Chemical Society.

  1. Stretchable, porous, and conductive energy textiles.

    Science.gov (United States)

    Hu, Liangbing; Pasta, Mauro; Mantia, Fabio La; Cui, Lifeng; Jeong, Sangmoo; Deshazer, Heather Dawn; Choi, Jang Wook; Han, Seung Min; Cui, Yi

    2010-02-10

    Recently there is strong interest in lightweight, flexible, and wearable electronics to meet the technological demands of modern society. Integrated energy storage devices of this type are a key area that is still significantly underdeveloped. Here, we describe wearable power devices using everyday textiles as the platform. With an extremely simple "dipping and drying" process using single-walled carbon nanotube (SWNT) ink, we produced highly conductive textiles with conductivity of 125 S cm(-1) and sheet resistance less than 1 Omega/sq. Such conductive textiles show outstanding flexibility and stretchability and demonstrate strong adhesion between the SWNTs and the textiles of interest. Supercapacitors made from these conductive textiles show high areal capacitance, up to 0.48F/cm(2), and high specific energy. We demonstrate the loading of pseudocapacitor materials into these conductive textiles that leads to a 24-fold increase of the areal capacitance of the device. These highly conductive textiles can provide new design opportunities for wearable electronics and energy storage applications.

  2. A new semicustom integrated bipolar amplifier for silicon strip detectors

    International Nuclear Information System (INIS)

    Zimmerman, T.

    1989-01-01

    The QPA02 is a four channel DC coupled two stage transimpedance amplifier designed at Fermilab on a semicustom linear array (Quickchip 2S) manufactured by Tektronix. The chip was developed as a silicon strip amplifier but may have other applications as well. Each channel consists of a preamplifier and a second stage amplifier/sharper with differential output which can directly drive a transmission line (90 to 140 ohms). External bypass capacitors are the only discrete components required. QPA02 has been tested and demonstrated to be an effective silicon strip amplifier. Other applications may exist which can use this amplifier or a modified version of this amplifier. For example, another design is now in progress for a wire chamber amplifier, QPA03, to be reported later. Only a relatively small effort was required to modify the design and layout for this application. 11 figs

  3. Optoelectronic Device Integration in Silicon (OpSIS)

    Science.gov (United States)

    2015-10-26

    device was fabricated in a CMOS-compatible process using 248 nm lithography, with only one patterning step. 14 Fig. 1 Schematic layout of the...Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr- Jones, Thomas; Hochberg, Michael; “Quantum dot SOA /silicon...filter drop (solid) and through (dashed) spectrum, and SOA gain spectrum at 150 mA (blue). The expected lasing wavelength (1552.3 nm) is labeled by a red

  4. Ultrahigh-speed hybrid laser for silicon photonic integrated chips

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Park, Gyeong Cheol; Ran, Qijiang

    2013-01-01

    and light-emitting diode (LED) structures have been proposed so far. Our hybrid laser is one of these efforts [2]. The hybrid laser consists of a dielectric reflector, a III-V semiconductor active material, and a high-index-contrast grating (HCG) reflector formed in the silicon layer of a silicon......-oninsulator (SOI) wafer. ‘Hybrid’ indicates that a III-V active material is wafer-bonded to a silicon SOI wafer. In the hybrid laser, light is vertically amplified between the dielectric and the HCG reflectors, while the light output is laterally emitted to a normal Si ridge waveguide that is connected to the HCG...... reflector. The HCG works as a vertical mirror as well as a vertical-to-lateral coupler. Very small field penetration into the HCG allows for 3-4 times smaller modal volume than typical vertical-cavity surface-emitting lasers (VCSELs). This leads to high direct modulation speed. Details on device operating...

  5. Rugged and breathable forms of stretchable electronics with adherent composite substrates for transcutaneous monitoring.

    Science.gov (United States)

    Jang, Kyung-In; Han, Sang Youn; Xu, Sheng; Mathewson, Kyle E; Zhang, Yihui; Jeong, Jae-Woong; Kim, Gwang-Tae; Webb, R Chad; Lee, Jung Woo; Dawidczyk, Thomas J; Kim, Rak Hwan; Song, Young Min; Yeo, Woon-Hong; Kim, Stanley; Cheng, Huanyu; Rhee, Sang Il; Chung, Jeahoon; Kim, Byunggik; Chung, Ha Uk; Lee, Dongjun; Yang, Yiyuan; Cho, Moongee; Gaspar, John G; Carbonari, Ronald; Fabiani, Monica; Gratton, Gabriele; Huang, Yonggang; Rogers, John A

    2014-09-03

    Research in stretchable electronics involves fundamental scientific topics relevant to applications with importance in human healthcare. Despite significant progress in active components, routes to mechanically robust construction are lacking. Here, we introduce materials and composite designs for thin, breathable, soft electronics that can adhere strongly to the skin, with the ability to be applied and removed hundreds of times without damaging the devices or the skin, even in regions with substantial topography and coverage of hair. The approach combines thin, ultralow modulus, cellular silicone materials with elastic, strain-limiting fabrics, to yield a compliant but rugged platform for stretchable electronics. Theoretical and experimental studies highlight the mechanics of adhesion and elastic deformation. Demonstrations include cutaneous optical, electrical and radio frequency sensors for measuring hydration state, electrophysiological activity, pulse and cerebral oximetry. Multipoint monitoring of a subject in an advanced driving simulator provides a practical example.

  6. Rugged and breathable forms of stretchable electronics with adherent composite substrates for transcutaneous monitoring

    Science.gov (United States)

    Jang, Kyung-In; Han, Sang Youn; Xu, Sheng; Mathewson, Kyle E.; Zhang, Yihui; Jeong, Jae-Woong; Kim, Gwang-Tae; Webb, R. Chad; Lee, Jung Woo; Dawidczyk, Thomas J.; Kim, Rak Hwan; Song, Young Min; Yeo, Woon-Hong; Kim, Stanley; Cheng, Huanyu; Rhee, Sang Il; Chung, Jeahoon; Kim, Byunggik; Chung, Ha Uk; Lee, Dongjun; Yang, Yiyuan; Cho, Moongee; Gaspar, John G.; Carbonari, Ronald; Fabiani, Monica; Gratton, Gabriele; Huang, Yonggang; Rogers, John A.

    2014-09-01

    Research in stretchable electronics involves fundamental scientific topics relevant to applications with importance in human healthcare. Despite significant progress in active components, routes to mechanically robust construction are lacking. Here, we introduce materials and composite designs for thin, breathable, soft electronics that can adhere strongly to the skin, with the ability to be applied and removed hundreds of times without damaging the devices or the skin, even in regions with substantial topography and coverage of hair. The approach combines thin, ultralow modulus, cellular silicone materials with elastic, strain-limiting fabrics, to yield a compliant but rugged platform for stretchable electronics. Theoretical and experimental studies highlight the mechanics of adhesion and elastic deformation. Demonstrations include cutaneous optical, electrical and radio frequency sensors for measuring hydration state, electrophysiological activity, pulse and cerebral oximetry. Multipoint monitoring of a subject in an advanced driving simulator provides a practical example.

  7. Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

    Science.gov (United States)

    Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

    2017-12-13

    Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

  8. Transparent Stretchable Self-Powered Patchable Sensor Platform with Ultrasensitive Recognition of Human Activities.

    Science.gov (United States)

    Hwang, Byeong-Ung; Lee, Ju-Hyuck; Trung, Tran Quang; Roh, Eun; Kim, Do-Il; Kim, Sang-Woo; Lee, Nae-Eung

    2015-09-22

    Monitoring of human activities can provide clinically relevant information pertaining to disease diagnostics, preventive medicine, care for patients with chronic diseases, rehabilitation, and prosthetics. The recognition of strains on human skin, induced by subtle movements of muscles in the internal organs, such as the esophagus and trachea, and the motion of joints, was demonstrated using a self-powered patchable strain sensor platform, composed on multifunctional nanocomposites of low-density silver nanowires with a conductive elastomer of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate/polyurethane, with high sensitivity, stretchability, and optical transparency. The ultra-low-power consumption of the sensor, integrated with both a supercapacitor and a triboelectric nanogenerator into a single transparent stretchable platform based on the same nanocomposites, results in a self-powered monitoring system for skin strain. The capability of the sensor to recognize a wide range of strain on skin has the potential for use in new areas of invisible stretchable electronics for human monitoring. A new type of transparent, stretchable, and ultrasensitive strain sensor based on a AgNW/PEDOT:PSS/PU nanocomposite was developed. The concept of a self-powered patchable sensor system integrated with a supercapacitor and a triboelectric nanogenerator that can be used universally as an autonomous invisible sensor system was used to detect the wide range of strain on human skin.

  9. Silicon analog components device design, process integration, characterization, and reliability

    CERN Document Server

    El-Kareh, Badih

    2015-01-01

    This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.

  10. MWCNTs based flexible and stretchable strain sensors

    Science.gov (United States)

    Khan, Saeed Ahmed; Gao, Min; Zhu, Yuechang; Yan, Zhuocheng; Lin, Yuan

    2017-06-01

    Carbon nanotubes have potential applications in flexible and stretchable devices due to their remarkable electromechanical properties. Flexible and stretchable strain sensors of multi-walled carbon nanotubes (MWCNTs) with aligned or random structures were fabricated on poly-dimethylsiloxane (PDMS) substrate with different techniques. It was observed that the spraycoatedtechniquebased strain sensor fabricated on PDMS substrate showed higher sensitivity higher stretchability, better linearity and excellent longer time stability than the sensor fabricated with other methods presented in this work. The scanning electron microscopy images indicated the spray coating technique can produce a better uniform and compact CNT network, which is the important role affecting the performance of CNT-based flexible strain sensors. Project supported by the National Basic Research Program of China (No. 2015CB351905), the National Natural Science Foundation of China (No. 61306015), the Technology Innovative Research Team of Sichuan Province of China (No.2015TD0005), and “111” Project (No. B13042)

  11. Graphene metallization of high-stress silicon nitride resonators for electrical integration.

    Science.gov (United States)

    Lee, Sunwoo; Adiga, Vivekananda P; Barton, Robert A; van der Zande, Arend M; Lee, Gwan-Hyoung; Ilic, B Rob; Gondarenko, Alexander; Parpia, Jeevak M; Craighead, Harold G; Hone, James

    2013-09-11

    High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing, signal processing, and optomechanics. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30% on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electrostatic tuning of the frequency by up to 0.3% per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.

  12. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea; Svendsen, Winnie Edith; Dimaki, Maria

    2016-01-01

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project....... The presented research is based on this sensor structure and investigates its potential as a versatile biomarker detection platform by evaluating different functionalization approaches. The functionalization of the silicon sensor surface with organic molecules was investigated in detail to determine...... the suitability of different methods for the preparation of organic interfaces for protein attachment. Oxide-free silicon surfaces offer unique possibilities to create highly sensitive sensor surfaces for charge detection due to the lack of an insulating oxide layer, but the highly reactive surface presents...

  13. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors

    DEFF Research Database (Denmark)

    Pfreundt, Andrea

    This thesis deals with the development of a novel biosensor for the detection of biomolecules based on a silicon nanowire biologically gated field-effect transistor and its integration into a point-of-care device. The sensor and electrical on-chip integration was developed in a different project....... The presented research is based on this sensor structure and investigates its potential as a versatile biomarker detection platform by evaluating different functionalization approaches. The functionalization of the silicon sensor surface with organic molecules was investigated in detail to determine...... the suitability of different methods for the preparation of organic interfaces for protein attachment. Oxide-free silicon surfaces offer unique possibilities to create highly sensitive sensor surfaces for charge detection due to the lack of an insulating oxide layer, but the highly reactive surface presents...

  14. High-dimensional quantum key distribution based on multicore fiber using silicon photonic integrated circuits

    DEFF Research Database (Denmark)

    Ding, Yunhong; Bacco, Davide; Dalgaard, Kjeld

    2017-01-01

    is intrinsically limited to 1 bit/photon. Here we propose and experimentally demonstrate, for the first time, a high-dimensional quantum key distribution protocol based on space division multiplexing in multicore fiber using silicon photonic integrated lightwave circuits. We successfully realized three mutually......-dimensional quantum states, and enables breaking the information efficiency limit of traditional quantum key distribution protocols. In addition, the silicon photonic circuits used in our work integrate variable optical attenuators, highly efficient multicore fiber couplers, and Mach-Zehnder interferometers, enabling...... manipulating high-dimensional quantum states in a compact and stable manner. Our demonstration paves the way to utilize state-of-the-art multicore fibers for noise tolerance high-dimensional quantum key distribution, and boost silicon photonics for high information efficiency quantum communications....

  15. In-plane tunnelling field-effect transistor integrated on Silicon.

    Science.gov (United States)

    Fina, Ignasi; Apachitei, Geanina; Preziosi, Daniele; Deniz, Hakan; Kriegner, Dominik; Marti, Xavier; Alexe, Marin

    2015-09-25

    Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. On the other hand, there has been a numerous demonstrations of the so-called magnetoelectric effect (coupling between ferroelectric and ferromagnetic order) using nearly-perfect heterostructures. However, the scrutiny of the ingredients that lead to magnetoelectric coupling, namely magnetic moment and a conducting channel, does not necessarily require structural perfection. In this work, we circumvent the stringent requirements for epilayers while preserving the magnetoelectric functionality in a silicon-integrated device. Additionally, we have identified an in-plane tunnelling mechanism which responds to a vertical electric field. This genuine electroresistance effect is distinct from known resistive-switching or tunnel electro resistance.

  16. An innovative large scale integration of silicon nanowire-based field effect transistors

    Science.gov (United States)

    Legallais, M.; Nguyen, T. T. T.; Mouis, M.; Salem, B.; Robin, E.; Chenevier, P.; Ternon, C.

    2018-05-01

    Since the early 2000s, silicon nanowire field effect transistors are emerging as ultrasensitive biosensors while offering label-free, portable and rapid detection. Nevertheless, their large scale production remains an ongoing challenge due to time consuming, complex and costly technology. In order to bypass these issues, we report here on the first integration of silicon nanowire networks, called nanonet, into long channel field effect transistors using standard microelectronic process. A special attention is paid to the silicidation of the contacts which involved a large number of SiNWs. The electrical characteristics of these FETs constituted by randomly oriented silicon nanowires are also studied. Compatible integration on the back-end of CMOS readout and promising electrical performances open new opportunities for sensing applications.

  17. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

    Science.gov (United States)

    Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

    2018-04-01

    Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

  18. Highly stretchable electrospun conducting polymer nanofibers

    Science.gov (United States)

    Boubée de Gramont, Fanny; Zhang, Shiming; Tomasello, Gaia; Kumar, Prajwal; Sarkissian, Andranik; Cicoira, Fabio

    2017-08-01

    Biomedical electronics research targets both wearable and biocompatible electronic devices easily adaptable to specific functions. To achieve such goals, stretchable organic electronic materials are some of the most intriguing candidates. Herein, we develop highly stretchable poly-(3,4-ethylenedioxythiphene) (PEDOT) doped with tosylate (PEDOT:Tos) nanofibers. A two-step process involving electrospinning of a carrier polymer (with oxidant) and vapor phase polymerization was used to produce fibers on a polydimethylsiloxane substrate. The fibers can be stretched up to 140% of the initial length maintaining high conductivity.

  19. Integration of 2D materials on a silicon photonics platform for optoelectronics applications

    Directory of Open Access Journals (Sweden)

    Youngblood Nathan

    2016-12-01

    Full Text Available Owing to enormous growth in both data storage and the demand for high-performance computing, there has been a major effort to integrate telecom networks on-chip. Silicon photonics is an ideal candidate, thanks to the maturity and economics of current CMOS processes in addition to the desirable optical properties of silicon in the near IR. The basics of optical communication require the ability to generate, modulate, and detect light, which is not currently possible with silicon alone. Growing germanium or III/V materials on silicon is technically challenging due to the mismatch between lattice constants and thermal properties. One proposed solution is to use two-dimensional materials, which have covalent bonds in-plane, but are held together by van der Waals forces out of plane. These materials have many unique electrical and optical properties and can be transferred to an arbitrary substrate without lattice matching requirements. This article reviews recent progress toward the integration of 2D materials on a silicon photonics platform for optoelectronic applications.

  20. Tape transfer printing of a liquid metal alloy for stretchable RF electronics.

    Science.gov (United States)

    Jeong, Seung Hee; Hjort, Klas; Wu, Zhigang

    2014-09-03

    In order to make conductors with large cross sections for low impedance radio frequency (RF) electronics, while still retaining high stretchability, liquid-alloy-based microfluidic stretchable electronics offers stretchable electronic systems the unique opportunity to combine various sensors on our bodies or organs with high-quality wireless communication with the external world (devices/systems), without sacrificing enhanced user comfort. This microfluidic approach, based on printed circuit board technology, allows large area processing of large cross section conductors and robust contacts, which can handle a lot of stretching between the embedded rigid active components and the surrounding system. Although it provides such benefits, further development is needed to realize its potential as a high throughput, cost-effective process technology. In this paper, tape transfer printing is proposed to supply a rapid prototyping batch process at low cost, albeit at a low resolution of 150 μm. In particular, isolated patterns can be obtained in a simple one-step process. Finally, a stretchable radio frequency identification (RFID) tag is demonstrated. The measured results show the robustness of the hybrid integrated system when the tag is stretched at 50% for 3000 cycles.

  1. Tape Transfer Printing of a Liquid Metal Alloy for Stretchable RF Electronics

    Directory of Open Access Journals (Sweden)

    Seung Hee Jeong

    2014-09-01

    Full Text Available In order to make conductors with large cross sections for low impedance radio frequency (RF electronics, while still retaining high stretchability, liquid-alloy-based microfluidic stretchable electronics offers stretchable electronic systems the unique opportunity to combine various sensors on our bodies or organs with high-quality wireless communication with the external world (devices/systems, without sacrificing enhanced user comfort. This microfluidic approach, based on printed circuit board technology, allows large area processing of large cross section conductors and robust contacts, which can handle a lot of stretching between the embedded rigid active components and the surrounding system. Although it provides such benefits, further development is needed to realize its potential as a high throughput, cost-effective process technology. In this paper, tape transfer printing is proposed to supply a rapid prototyping batch process at low cost, albeit at a low resolution of 150 μm. In particular, isolated patterns can be obtained in a simple one-step process. Finally, a stretchable radio frequency identification (RFID tag is demonstrated. The measured results show the robustness of the hybrid integrated system when the tag is stretched at 50% for 3000 cycles.

  2. Mechanics of ultra-stretchable self-similar serpentine interconnects

    International Nuclear Information System (INIS)

    Zhang, Yihui; Fu, Haoran; Su, Yewang; Xu, Sheng

    2013-01-01

    Graphical abstract: We developed analytical models of flexibility and elastic-stretchability for self-similar interconnect. The analytic solutions agree very well with the finite element analyses, both demonstrating that the elastic-stretchability more than doubles when the order of self-similar structure increases by one. Design optimization yields 90% and 50% elastic stretchability for systems with surface filling ratios of 50% and 70% of active devices, respectively. The analytic models are useful for the development of stretchable electronics that simultaneously demand large coverage of active devices, such as stretchable photovoltaics and electronic eye-ball cameras. -- Abstract: Electrical interconnects that adopt self-similar, serpentine layouts offer exceptional levels of stretchability in systems that consist of collections of small, non-stretchable active devices in the so-called island–bridge design. This paper develops analytical models of flexibility and elastic stretchability for such structures, and establishes recursive formulae at different orders of self-similarity. The analytic solutions agree well with finite element analysis, with both demonstrating that the elastic stretchability more than doubles when the order of the self-similar structure increases by one. Design optimization yields 90% and 50% elastic stretchability for systems with surface filling ratios of 50% and 70% of active devices, respectively

  3. Inkjet-printed, intrinsically stretchable conductors and interconnects

    Science.gov (United States)

    Kraft, U.; Molina-Lopez, F.; Zhu, C.; Wang, Y.; Bao, Z.; Murmann, B.

    2017-08-01

    In the future, a large variety of electronic devices will be wearable and operate in close contact with the skin. To accommodate deformations such as twisting and elongation, these devices should ideally be stretchable. One viable approach toward stretchable electronics is the development of intrinsically stretchable electronic materials, devices and circuits. Recently, the first intrinsically stretchable transistors have been demonstrated [1-7]. However, for the realization of stretchable circuits, stretchable interconnects are equally important. For the deployment of highly stretchable materials as interconnects and electrodes, patterning is crucial. Therefore, we developed a process for inkjet printing of intrinsically stretchable PEDOT:PSS-based interconnects and conductors. Ionic additives act as dopants and plasticisers in this approach [8]. A customized ink was printed on stretchable polymeric substrates (SEBS, styrene-ethylene-butadiene-styrene) and optimized to achieve a smooth morphology of the printed features by adjusting the surface tension and suppressing the coffee stain effect. The printed interconnects have a conductivity of 700 S/cm, sustain strains above 100% and show good stability in 1000-cycle stretching experiments. In addition to morphology, electrical properties and stretchability, we also investigated bias-stress stability, long-term stability in ambient air and cycling stability.

  4. Wearable Intrinsically Soft, Stretchable, Flexible Devices for Memories and Computing.

    Science.gov (United States)

    Rajan, Krishna; Garofalo, Erik; Chiolerio, Alessandro

    2018-01-27

    A recent trend in the development of high mass consumption electron devices is towards electronic textiles (e-textiles), smart wearable devices, smart clothes, and flexible or printable electronics. Intrinsically soft, stretchable, flexible, Wearable Memories and Computing devices (WMCs) bring us closer to sci-fi scenarios, where future electronic systems are totally integrated in our everyday outfits and help us in achieving a higher comfort level, interacting for us with other digital devices such as smartphones and domotics, or with analog devices, such as our brain/peripheral nervous system. WMC will enable each of us to contribute to open and big data systems as individual nodes, providing real-time information about physical and environmental parameters (including air pollution monitoring, sound and light pollution, chemical or radioactive fallout alert, network availability, and so on). Furthermore, WMC could be directly connected to human brain and enable extremely fast operation and unprecedented interface complexity, directly mapping the continuous states available to biological systems. This review focuses on recent advances in nanotechnology and materials science and pays particular attention to any result and promising technology to enable intrinsically soft, stretchable, flexible WMC.

  5. Facile Fabrication of Highly Stretchable Nanocrack Indium Film Using Magnetron Sputtering

    Science.gov (United States)

    Yang, Cancan; Yu, Mei; Wang, Chong; Yu, Zhe

    2017-12-01

    Stretchable electronics, such as stretchable displays and bioeletrictrical interfaces, require stretchable electrical conductors which can be stretched by large strain repeatedly. In this work, highly stretchable indium films were successfully deposited on PDMS substrates using magnetron sputtering. Stretchable indium films can sustain as much as 180% mechanical strain while maintaining great electrical conductivity. Compared to popular gold films, indium films have much better stretchability, light permeability and lower melting point, which can be widely used in bioelectronics.

  6. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi

    2014-01-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.

  7. Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics.

    Science.gov (United States)

    Chen, Che; Youngblood, Nathan; Peng, Ruoming; Yoo, Daehan; Mohr, Daniel A; Johnson, Timothy W; Oh, Sang-Hyun; Li, Mo

    2017-02-08

    We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.

  8. Tattoo-Like Strain Gauges Based on Silicon Nano-Membranes

    Science.gov (United States)

    Lu, Nanshu

    2012-02-01

    This talk reports the in vivo measurement of tissue deformation through adhesive-free, conformable lamination of a tattoo-like elastic strain gauge consisted of piezoresistive silicon nano-membranes strategically integrated with tissue-like elastomeric substrates. The mechanical deformation in soft tissues cannot yet be directly quantified due to the lack of enabling tools. While stiff strain gauges for structural health monitoring have long existed, biological tissues are soft, curvilinear and highly deformable in contrast to civil or aerospace structures. An ultra-thin, ultra-soft, tattoo-like strain gauge that can conform to the convoluted surface of human body and stay attached during locomotion will be able to directly quantify tissue deformation without affecting the mechanical behavior of the tissue. While single crystalline silicon is known to have the highest gauge factor and best elastic response, it is intrinsically stiff and brittle. To achieve strain gauges with high compliance, high stretchability and reasonable sensitivity, single crystalline silicon nano-membranes will be transfer-printed onto polymeric support through carefully engineered stamps. The thickness and length of the Si strip will be chosen according to theoretical and numerical mechanics analysis which takes into account for the tradeoff between stretchability and sensitivity.

  9. A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources

    Science.gov (United States)

    Venter, Petrus J.; Alberts, Antonie C.; du Plessis, Monuko; Joubert, Trudi-Heleen; Goosen, Marius E.; Janse van Rensburg, Christo; Rademeyer, Pieter; Fauré, Nicolaas M.

    2013-03-01

    Microdisplay technology, the miniaturization and integration of small displays for various applications, is predominantly based on OLED and LCoS technologies. Silicon light emission from hot carrier electroluminescence has been shown to emit light visibly perceptible without the aid of any additional intensification, although the electrical to optical conversion efficiency is not as high as the technologies mentioned above. For some applications, this drawback may be traded off against the major cost advantage and superior integration opportunities offered by CMOS microdisplays using integrated silicon light sources. This work introduces an improved version of our previously published microdisplay by making use of new efficiency enhanced CMOS light emitting structures and an increased display resolution. Silicon hot carrier luminescence is often created when reverse biased pn-junctions enter the breakdown regime where impact ionization results in carrier transport across the junction. Avalanche breakdown is typically unwanted in modern CMOS processes. Design rules and process design are generally tailored to prevent breakdown, while the voltages associated with breakdown are too high to directly interact with the rest of the CMOS standard library. This work shows that it is possible to lower the operating voltage of CMOS light sources without compromising the optical output power. This results in more efficient light sources with improved interaction with other standard library components. This work proves that it is possible to create a reasonably high resolution microdisplay while integrating the active matrix controller and drivers on the same integrated circuit die without additional modifications, in a standard CMOS process.

  10. Radiation hardness of silicon integrated nano photonic devices

    NARCIS (Netherlands)

    Ebeling, R.; Yang, S.; Bodis, P.; Harmsma, P.J.; Berg, J.H. van den; Boom, C.W. de; Yousefi, M.

    2010-01-01

    Integrated Nano Photonic (INP) sensors will be used in medical and space applications in the near future. Therefore, these devices must also be able to withstand harsh environments without failure. For space and medical applications radiation hardness is a very important issue. At TNO we have

  11. Platinum microheater integrated silicon optical bench assembly for endoscopic optical coherence tomography

    International Nuclear Information System (INIS)

    Xu, Y; Wang, M F; Premachandran, C S; Chen, K W S; Chen, N; Olivo, M

    2010-01-01

    A novel platinum microheater and comb isolator integrated silicon optical bench (SiOB) assembly method has been successfully demonstrated to provide electrical connection and high precision alignment for a two-axis gimbal-less micromirror. Localized heating and wetting of plastic core micro solder balls is achieved by the integrated platinum heater, and the maximum measured temperature of the platinum heater is about 250 °C. In addition, assembly procedures are significantly simplified by involving a comb isolator made by deep reactive ion etching (DRIE) in comparison with our previously reported design. DRIE is also applied to form a 45° trench on the lower silicon substrate with a nearly vertical sidewall for the micromirror. Hence, the overall dimensions of the SiOB assembly can be reduced further to meet the requirements of endoscopic optical coherence tomography (EOCT) for miniaturization

  12. PDMS-on-silicon microsystems: Integration of polymer micro/nanostructures for new MEMS device functions

    Science.gov (United States)

    Tung, Yi-Chung

    2005-11-01

    Modern technologies found in military, space-craft, automotive, and telecommunications applications strongly demand reductions of the manufacturing cost, power consumption, size, and weight of integrated sensors and actuators. The research field of microelectromechanical systems (MEMS) has seen significant technological innovations and advancements to meet this demand in the last two decades. Historically, MEMS technology has been seen as an offspring of silicon-based integrated circuit (IC) technology. But recently, the roles that polymer materials play in MEMS have been more pronounced due to their cost effectiveness, manufacturability, and compatibility with micro/nanoscale biological and chemical systems. Among these polymers, an organic elastomer, Polydimethylsiloxane (PDMS), has become one of the most popular materials because of its unique material properties and moldability suited for low-cost rapid prototyping based on a fabrication technique called soft lithography. However, PDMS micro/nanostructures, not allowed to be integrated with other silicon-based devices, find their limited use in MEMS other than in passive microfluidic components. The lack of a technology bridging the gap between silicon and PDMS prohibits us to realize new MEMS devices potentially resulting from the simultaneous use of these two materials. This research explores a fully new technological concept of "PDMS-on-silicon microsystems." "PDMS-on-silicon microsystems" refers to a class of novel MEMS devices integrating PDMS micro/nanostructures onto silicon actuators and/or sensors. The research aims to demonstrate a new type of MEMS devices taking advantage of benefits resulting from both of silicon and PDMS. To achieve this goal, this work develops a new MEMS fabrication technique called "soft-lithographic lift-off and grafting (SLLOG)." The SLLOG process starts with soft lithography-based molding and release of a three-dimensional (3D) PDMS microstructure. This is followed by

  13. W-band Phased Array Systems using Silicon Integrated Circuits

    Science.gov (United States)

    Kim, Sang Young

    This thesis presents the silicon-based on-chip W-band phased array systems. An improved quadrature all-pass filter (QAF) and its implementation in 60--80 GHz active phase shifter using 0.13 microm SiGe BiCMOS technology is presented. It is demonstrated that with the inclusion of an Rs/R in the high Q branches of C and L, the sensitivity to the loading capacitance, therefore the I/Q phase and amplitude errors are minimized. This technique is especially suited for wideband millimeter-wave circuits where the loading capacitance (CL) is comparable to the filter capacitance (C). A prototype 60--80 GHz active phased shifter using the improved QAF is demonstrated. The overall chip size is 1.15 x 0.92 mm2 with the power consumption of 108 mW. The measured S11 and S22 are pass pi-network. The chip size is 0.45 x 0.3 mm2 without pads and consumes virtually no power. The measured S11 and S22 is 8 dBm and the simulated IIP3 is > 22 dBm. A low-power 76--84 GHz 4-element phased array receiver using the designed passive phase shifter is presented. The power consumption is minimized by using a single-ended design and alternating the amplifiers and phase shifter cells to result in a low noise figure at a low power consumption. A variable gain amplifier and the 11° phase shifter are used to correct for the rms gain and phase errors at different operating frequencies. The overall chip size is 2.0 x 2.7 mm2 with the current consumption of 18 mA/channel with 1.8 V supply voltage. The measured S11 and S 22 is circuits are designed differentially to result in less sensitivity to packaging effect and high channel-to-channel isolation. The overall chip size is 5.0 x 5.8 mm 2 with the power consumption of 500--600 mA from 2 V supply voltage. The measured S11 and S22 for all 16 phase states is 10 dB for 76.4--90 GHz with the rms gain error of -45 dB. The measured NF is 11.2--13 dB at 77--87 GHz at the maximum gain state. And the measured input P1dB is 20 dBm at 77 GHz and -25.8 dBm at the

  14. An improved PIN photodetector with integrated JFET on high-resistivity silicon

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Piemonte, Claudio; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Fazzi, Alberto; Pignatel, Giorgio U.

    2006-01-01

    We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed

  15. Integrated investigation approach for determining mechanical properties of poly-silicon membranes

    OpenAIRE

    Brueckner, J.; Dehe, A.; Auerswald, E.; Dudek, R.; Michel, B.; Rzepka, S.

    2014-01-01

    A methodology is presented for determining mechanical properties of free-standing thin films such as poly-silicon membranes. The integrated investigation approach comprises test structure development, mechanical testing, and numerical simulation. All membrane test structures developed and manufactured consist of the same material but have different stiffness due to variations in the geometric design. The mechanical tests apply microscopic loads utilizing a nanoindentation tool. Young's modulu...

  16. Transparent and Stretchable High-Performance Supercapacitors Based on Wrinkled Graphene Electrodes

    Science.gov (United States)

    2013-12-18

    High-Performance Supercapacitors Based onWrinkledGraphene Electrodes Tao Chen,† Yuhua Xue,† Ajit K. Roy,‡ and Liming Dai†,* †Center of Advanced Science...batteries,4 and textile super- capacitors,7 have been developed to retain their functions even when they were under large strains (up to 40%). Along... electrodes and the associated supercapacitor cells cannot be both trans- parent and stretchable.1318 It is highly desirable to integrate the

  17. A bipolar analog front-end integrated circuit for the SDC silicon tracker

    International Nuclear Information System (INIS)

    Kipnis, I.; Spieler, H.; Collins, T.

    1993-11-01

    A low-noise, low-power, high-bandwidth, radiation hard, silicon bipolar-transistor full-custom integrated circuit (IC) containing 64 channels of analog signal processing has been developed for the SDC silicon tracker. The IC was designed and tested at LBL and was fabricated using AT ampersand T's CBIC-U2, 4 GHz f T complementary bipolar technology. Each channel contains the following functions: low-noise preamplification, pulse shaping and threshold discrimination. This is the first iteration of the production analog IC for the SDC silicon tracker. The IC is laid out to directly match the 50 μm pitch double-sided silicon strip detector. The chip measures 6.8 mm x 3.1 mm and contains 3,600 transistors. Three stages of amplification provide 180 mV/fC of gain with a 35 nsec peaking time at the comparator input. For a 14 pF detector capacitance, the equivalent noise charge is 1300 el. rms at a power consumption of 1 mW/channel from a single 3.5 V supply. With the discriminator threshold set to 4 times the noise level, a 16 nsec time-walk for 1.25 to 10fC signals is achieved using a time-walk compensation network. Irradiation tests at TRIUMF to a Φ=10 14 protons/cm 2 have been performed on the IC, demonstrating the radiation hardness of the complementary bipolar process

  18. Stretchable conductive polypyrrole films modified with dopaminated hyaluronic acid.

    Science.gov (United States)

    Texidó, Robert; Orgaz, Antonio; Ramos-Pérez, Victor; Borrós, Salvador

    2017-07-01

    In this paper, we report the modification of polypirrole (PPy) with dopaminated hyaluronic acid (HADA). This design improves PPy adhesion onto stretchable materials such as poly(dimethylsiloxane) (PDMS) allowing the formation of conducting films on this kind of very flexible, hydrophobic materials. The results revealed that described PPy modification allows to obtain stable PPy:HADA nano-suspension able to cast films directly on PDMS. The comparison of PPy:HADA films with conventional PPy and other modified PPy shows that the modification improved the strength of the films under tension stress and their water resistance. Moreover, the modification proposed does not affect significantly the conductivity of the PPy films. The resulting properties of the material make it especially suitable for bio-integrated device applications, where a biocompatible material with stable electrical behaviour under deformation and water media is needed. Copyright © 2017 Elsevier B.V. All rights reserved.

  19. Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems

    DEFF Research Database (Denmark)

    Jovanovic, Vladimir; Gentile, Gennaro; Dekker, Ronald

    2015-01-01

    IC processing is used to develop technology for silicon-filled millimeter-wave-integrated waveguides. The front-end process defines critical waveguide sections and enables integration of dedicated components, such as RF capacitors and resistors. Wafer gluing is used to strengthen the mechanical...... insertion loss is only 0.12 dB/mm at 105 GHz. The optimized planar transition, the components of a beam-forming network, and a slotted waveguide antenna array are fabricated as further technology demonstrators. The broadside radiation of the antenna array has a beam steering of 63° using a frequency...

  20. Online analysis of oxygen inside silicon-glass microreactors with integrated optical sensors

    DEFF Research Database (Denmark)

    Ehgartner, Josef; Sulzer, Philipp; Burger, Tobias

    2016-01-01

    A powerful online analysis set-up for oxygen measurements within microfluidic devices is presented. It features integration of optical oxygen sensors into microreactors, which enables contactless, accurate and inexpensive readout using commercially available oxygen meters via luminescent lifetime...... measurements in the frequency domain (phase shifts). The fabrication and patterning of sensor layers down to a size of 100 μm in diameter is performed via automated airbrush spraying and was used for the integration into silicon-glass microreactors. A novel and easily processable sensor material is also...

  1. Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations.

    Science.gov (United States)

    Kim, Dae-Hyeong; Song, Jizhou; Choi, Won Mook; Kim, Hoon-Sik; Kim, Rak-Hwan; Liu, Zhuangjian; Huang, Yonggang Y; Hwang, Keh-Chih; Zhang, Yong-wei; Rogers, John A

    2008-12-02

    Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90 degrees in approximately 1 cm) and linear stretching to "rubber-band" levels of strain (e.g., up to approximately 140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics.

  2. Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations

    Science.gov (United States)

    Kim, Dae-Hyeong; Song, Jizhou; Choi, Won Mook; Kim, Hoon-Sik; Kim, Rak-Hwan; Liu, Zhuangjian; Huang, Yonggang Y.; Hwang, Keh-Chih; Zhang, Yong-wei; Rogers, John A.

    2008-01-01

    Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90° in ≈1 cm) and linear stretching to “rubber-band” levels of strain (e.g., up to ≈140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics. PMID:19015528

  3. Stretchable and Soft Electronics using Liquid Metals.

    Science.gov (United States)

    Dickey, Michael D

    2017-07-01

    The use of liquid metals based on gallium for soft and stretchable electronics is discussed. This emerging class of electronics is motivated, in part, by the new opportunities that arise from devices that have mechanical properties similar to those encountered in the human experience, such as skin, tissue, textiles, and clothing. These types of electronics (e.g., wearable or implantable electronics, sensors for soft robotics, e-skin) must operate during deformation. Liquid metals are compelling materials for these applications because, in principle, they are infinitely deformable while retaining metallic conductivity. Liquid metals have been used for stretchable wires and interconnects, reconfigurable antennas, soft sensors, self-healing circuits, and conformal electrodes. In contrast to Hg, liquid metals based on gallium have low toxicity and essentially no vapor pressure and are therefore considered safe to handle. Whereas most liquids bead up to minimize surface energy, the presence of a surface oxide on these metals makes it possible to pattern them into useful shapes using a variety of techniques, including fluidic injection and 3D printing. In addition to forming excellent conductors, these metals can be used actively to form memory devices, sensors, and diodes that are completely built from soft materials. The properties of these materials, their applications within soft and stretchable electronics, and future opportunities and challenges are considered. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    Science.gov (United States)

    Bickford, Justin Robert

    Waferbonding is a technique that integrates different semiconductors together, in order to obtain hybrid structures that exploit the strengths of each material. Work was done at the University of California at San Diego to investigate the waferbonding of III/V compound semiconductors to silicon using a metal interface. GaAs and other III/V compound semiconductors surpass silicon in their ability to create high performance microwave devices, while silicon offers an inexpensive platform with a proven digital architecture that can interface with microwave devices and support passive components and driver circuitry. Intimate integration of the two will be required, as mixed RF/digital and optical/digital systems for communications devices such as cell phones, wi-fi, and optical communications systems are pushed smaller, faster, and to higher power. The metalbonding implementation of a proposed heterogeneous monolithic microwave integrated circuit (HMMIC) system was investigated, and was shown to extend the capabilities of existing homogeneous monolithic microwave integrated circuit (MMIC) systems. The main goals of this work were two-fold; first to implement a robust heterogeneous integration technique, and second, to show that this approach uniquely improves upon existing microwave integration technology. The metalbonding technique investigated sparsely integrated GaAs structures onto silicon, in pursuit of this HMMIC scheme. Both bottom-up and top-down fabrication methods were implemented. These approaches required the development of a myriad of meticulously designed fabrication procedures capable of avoiding the many incompatibilities between the compound semiconductor, bondmetal, and silicon materials. The bondmetal interface, provided by these techniques, broadens the scope of existing monolithic microwave integrated circuit technology design possibilities. Essential bond interface properties were measured to establish the performance of this heterogeneous

  5. Origami-enabled deformable silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); Tu, Hongen; Xu, Yong [Electrical and Computer Engineering, Wayne State University, 5050 Anthony Wayne Dr., Detroit, Michigan 48202 (United States); Song, Zeming; Jiang, Hanqing, E-mail: hanqing.jiang@asu.edu [School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States); Yu, Hongyu, E-mail: hongyu.yu@asu.edu [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287 (United States); School of Earth and Space Exploration, Arizona State University, Tempe, Arizona 85287 (United States)

    2014-02-24

    Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics.

  6. Origami-enabled deformable silicon solar cells

    International Nuclear Information System (INIS)

    Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing; Tu, Hongen; Xu, Yong; Song, Zeming; Jiang, Hanqing; Yu, Hongyu

    2014-01-01

    Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics

  7. Development of hybrid photon detectors with integrated silicon pixel readout for the RICH counters of LHCb

    CERN Document Server

    Alemi, M; Formenti, F; Gys, Thierry; Piedigrossi, D; Puertolas, D; Rosso, E; Snoeys, W; Wyllie, Ken H

    1999-01-01

    We report on the ongoing work towards a hybrid photon detector with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment at the Large Hadron Collider at CERN. The photon detector is based $9 on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a fast, binary readout chip with matching pixel electronics. The $9 performance of a half-scale prototype is presented, together with the developments and tests of a full-scale tube with large active area. Specific requirements for pixel front-end and readout electronics in LHCb are outlined, and $9 recent results obtained from pixel chips applicable to hybrid photon detector design are summarized.

  8. Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

    International Nuclear Information System (INIS)

    Clement, J.J.

    1980-01-01

    The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

  9. Micro direct methanol fuel cell with perforated silicon-plate integrated ionomer membrane

    DEFF Research Database (Denmark)

    Larsen, Jackie Vincent; Dalslet, Bjarke Thomas; Johansson, Anne-Charlotte Elisabeth Birgitta

    2014-01-01

    and catalytic electrode. AC impedance spectroscopy is utilized alongside IV characterization to determine the influence of the plate perforation geometries on the cell performance. It is found that higher ratios of perforation increases peak power density, with the highest achieved being 2.5 mW cm−2......This article describes the fabrication and characterization of a silicon based micro direct methanol fuel cell using a Nafion ionomer membrane integrated into a perforated silicon plate. The focus of this work is to provide a platform for micro- and nanostructuring of a combined current collector...... at a perforation ratio of 40.3%. The presented fuel cells also show a high volumetric peak power density of 2 mW cm−3 in light of the small system volume of 480 μL, while being fully self contained and passively feed....

  10. Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout

    Science.gov (United States)

    Noda, Manabu; Shibai, Hiroshi; Watabe, Toyoki; Hirao, Takanori; Yoda, Hiroyuki; Nagata, Hirohisa; Nakagawa, Takao; Kawada, Mitsunobu

    1998-08-01

    Low-noise and low-power cryogenic readout electronics are developed for a focal plane instrument of the IR Imaging Surveyor. We measured the static characteristics and the noise spectra of several types of silicon MOSFETs at the cryogenic temperature where silicon JFETs do not work well due to the carrier freeze-out. The 'kink' behavior of n- channel MOSFETs was observed below the carrier freeze-out temperature, but it was not obvious for the p-channel MOSFET. It was demonstrated the p-channel MOSFETs can be used for the cryogenic readout electronics of the IRIS's far-IR array with an acceptable performance. The amplifier integrated with these MOSFETs showed low-noise at 2K under a low power consumption of 1 (mu) W per MOSFET. We now design and evaluate several circuits that are fabricated by the CMOS process for cryogenic readout.

  11. Direct monolithic integration of vertical single crystalline octahedral molecular sieve nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Carretero-Genevrier, Adrian [Institut des Nanotechnologies de Lyon (INL), UMR-CNRS 5270, Ecole Central de Lyon, Ecully (France); Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Oro-Sole, Judith [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Gazquez, Jaume [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Magen, Cesar [Univ. de Zaragoza, Zaragoza (Spain); Miranda, Laura [Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Puig, Teresa [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Obradors, Xavier [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Ferain, Etienne [Univ. Catholique de Louvain, Louvain-la-Neuve (Belgium); Sanchez, Clement [Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Rodriguez-Carvajal, Juan [Institut Laue-Langevin, Grenoble Cedex (France); Mestres, Narcis [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain)

    2013-12-13

    We developed an original strategy to produce vertical epitaxial single crystalline manganese oxide octahedral molecular sieve (OMS) nanowires with tunable pore sizes and compositions on silicon substrates by using a chemical solution deposition approach. The nanowire growth mechanism involves the use of track-etched nanoporous polymer templates combined with the controlled growth of quartz thin films at the silicon surface, which allowed OMS nanowires to stabilize and crystallize. α-quartz thin films were obtained after thermal activated crystallization of the native amorphous silica surface layer assisted by Sr2+- or Ba2+-mediated heterogeneous catalysis in the air at 800 °C. These α-quartz thin films work as a selective template for the epitaxial growth of randomly oriented vertical OMS nanowires. Furthermore, the combination of soft chemistry and epitaxial growth opens new opportunities for the effective integration of novel technological functional tunneled complex oxides nanomaterials on Si substrates.

  12. Stretchable Kirigami Polyvinylidene Difluoride Thin Films for Energy Harvesting: Design, Analysis, and Performance

    Science.gov (United States)

    Hu, Nan; Chen, Dajing; Wang, Dong; Huang, Shicheng; Trase, Ian; Grover, Hannah M.; Yu, Xiaojiao; Zhang, John X. J.; Chen, Zi

    2018-02-01

    Kirigami, a modified form of origami which includes cutting, has been used to improve material stretchability and compliance. However, this technique is, so far, underexplored in patterning piezoelectric materials towards developing efficient and mechanically flexible thin-film energy generators. Motivated by existing kirigami-based applications, we introduce interdigitated cuts to polyvinylidene fluoride (PVDF) films to evaluate the effect on voltage generation and stretchability. Our results from theoretical analysis, numerical simulations, and experimental tests show that kirigami PVDF films exhibit an extended strain range while still maintaining significant voltage generation compared to films without cuts. Various cutting patterns are studied, and it is found that films with denser cuts have a larger voltage output. This kirigami design can enhance the properties of existing piezoelectric materials and help to integrate tunable PVDF generators into biomedical devices.

  13. Stretchable carbon nanotube charge-trap floating-gate memory and logic devices for wearable electronics.

    Science.gov (United States)

    Son, Donghee; Koo, Ja Hoon; Song, Jun-Kyul; Kim, Jaemin; Lee, Mincheol; Shim, Hyung Joon; Park, Minjoon; Lee, Minbaek; Kim, Ji Hoon; Kim, Dae-Hyeong

    2015-05-26

    Electronics for wearable applications require soft, flexible, and stretchable materials and designs to overcome the mechanical mismatch between the human body and devices. A key requirement for such wearable electronics is reliable operation with high performance and robustness during various deformations induced by motions. Here, we present materials and device design strategies for the core elements of wearable electronics, such as transistors, charge-trap floating-gate memory units, and various logic gates, with stretchable form factors. The use of semiconducting carbon nanotube networks designed for integration with charge traps and ultrathin dielectric layers meets the performance requirements as well as reliability, proven by detailed material and electrical characterizations using statistics. Serpentine interconnections and neutral mechanical plane layouts further enhance the deformability required for skin-based systems. Repetitive stretching tests and studies in mechanics corroborate the validity of the current approaches.

  14. Conductive Fabric-Based Stretchable Hybridized Nanogenerator for Scavenging Biomechanical Energy.

    Science.gov (United States)

    Zhang, Kewei; Wang, Zhong Lin; Yang, Ya

    2016-04-26

    We demonstrate a stretchable hybridized nanogenerator based on a highly conductive fabric of glass fibers/silver nanowires/polydimethylsiloxane. Including a triboelectric nanogenerator and an electromagnetic generator, the hybridized nanogenerator can deliver output voltage/current signals from stretchable movements by both triboelectrification and electromagnetic induction, maximizing the efficiency of energy scavenging from one motion. Compared to the individual energy-harvesting units, the hybridized nanogenerator has a better charging performance, where a 47 μF capacitor can be charged to 2.8 V in only 16 s. The hybridized nanogenerator can be integrated with a bus grip for scavenging wasted biomechanical energy from human body movements to solve the power source issue of some electric devices in the pure electric bus.

  15. Highly stretchable thermoset fibers and nonwovens using thiol-ene photopolymerization.

    Science.gov (United States)

    Shanmuganathan, Kadhiravan; Elliot, Steven M; Lane, Austin P; Ellison, Christopher J

    2014-08-27

    In this report, we describe the preparation and characterization of a new class of thermoset fibers with high elongation and elastic recovery. Integrating UV-activated thiol-ene photopolymerization and electrospinning, we demonstrate an environmentally friendly single step approach to convert small monomeric precursor molecules into highly elastic fibers and nonwoven mats. The fibers were derived by in situ photopolymerization of a trifunctional vinyl ether monomer and a tetrafunctional thiol. Although thermosets often offer good chemical and thermal stability, these fibers also have a high average elongation at break of 62%. The elastomeric nature of these vinyl-ether based fibers can be partly attributed to their subambient Tg and partly to the cross-link density, monomer structure, and resulting network homogeneity. Nonwoven mats of these fibers were also stretchable and exhibited a much higher elongation at break of about 85%. These thermoset stretchable fibers could have potential applications as textile, biomedical, hot chemical filtration, and composite materials.

  16. Recent advances on thermal analysis of stretchable electronics

    Directory of Open Access Journals (Sweden)

    Yuhang Li

    2016-01-01

    Full Text Available Stretchable electronics, which offers the performance of conventional wafer-based devices and mechanical properties of a rubber band, enables many novel applications that are not possible through conventional electronics due to its brittle nature. One effective strategy to realize stretchable electronics is to design the inorganic semiconductor material in a stretchable format on a compliant elastomeric substrate. Engineering thermal management is essential for the development of stretchable electronics to avoid adverse thermal effects on its performance as well as in applications involving human body and biological tissues where even 1–2 °C temperature increase is not allowed. This article reviews the recent advances in thermal management of stretchable inorganic electronics with focuses on the thermal models and their comparisons to experiments and finite element simulations.

  17. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu [Department of Materials Science and Engineering, Beckman Institute for Advanced Science and Technology, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S Goodwin Ave., Urbana, Illinois 61801 (United States); Bozler, Carl [Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420 (United States); Omenetto, Fiorenzo [Department of Biomedical Engineering, Department of Physics, Tufts University, 4 Colby St., Medford, Massachusetts 02155 (United States)

    2015-01-05

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

  18. Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

    International Nuclear Information System (INIS)

    Yin, Lan; Harburg, Daniel V.; Rogers, John A.; Bozler, Carl; Omenetto, Fiorenzo

    2015-01-01

    Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems

  19. Gigascale Silicon Photonic Transmitters Integrating HBT-based Carrier-injection Electroabsorption Modulator Structures

    Science.gov (United States)

    Fu, Enjin

    Demand for more bandwidth is rapidly increasing, which is driven by data intensive applications such as high-definition (HD) video streaming, cloud storage, and terascale computing applications. Next-generation high-performance computing systems require power efficient chip-to-chip and intra-chip interconnect yielding densities on the order of 1Tbps/cm2. The performance requirements of such system are the driving force behind the development of silicon integrated optical interconnect, providing a cost-effective solution for fully integrated optical interconnect systems on a single substrate. Compared to conventional electrical interconnect, optical interconnects have several advantages, including frequency independent insertion loss resulting in ultra wide bandwidth and link latency reduction. For high-speed optical transmitter modules, the optical modulator is a key component of the optical I/O channel. This thesis presents a silicon integrated optical transmitter module design based on a novel silicon HBT-based carrier injection electroabsorption modulator (EAM), which has the merits of wide optical bandwidth, high speed, low power, low drive voltage, small footprint, and high modulation efficiency. The structure, mechanism, and fabrication of the modulator structure will be discussed which is followed by the electrical modeling of the post-processed modulator device. The design and realization of a 10Gbps monolithic optical transmitter module integrating the driver circuit architecture and the HBT-based EAM device in a 130nm BiCMOS process is discussed. For high power efficiency, a 6Gbps ultra-low power driver IC implemented in a 130nm BiCMOS process is presented. The driver IC incorporates an integrated 27-1 pseudo-random bit sequence (PRBS) generator for reliable high-speed testing, and a driver circuit featuring digitally-tuned pre-emphasis signal strength. With outstanding drive capability, the driver module can be applied to a wide range of carrier

  20. Intrinsically Stretchable Nanostructured Silver Electrodes for Realizing Efficient Strain Sensors and Stretchable Organic Photovoltaics.

    Science.gov (United States)

    Yu, Yang-Yen; Chen, Chien-Hsun; Chueh, Chu-Chen; Chiang, Chun-Ying; Hsieh, Jang-Hsing; Chen, Chih-Ping; Chen, Wen-Chang

    2017-08-23

    In this study, a new hybrid electrode featuring a high gauge factor of >30, decent stretchability (100% of the original conductivity can be retained after 50 cycles of stretching under a 20% strain without prestrain treatment), high transmittance (>70%) across 400-900 nm, and a good sheet resistance (electrode is susceptible to the applied tensile strain and the ensuing change in conductivity enables the realization of an efficient strain sensor. Besides, a representative PTB7-th:PC 71 BM organic photovoltaic (OPV) using this electrode (with the assistance of a wrinkled scaffold to reinforce the stretchability of the active layer) can exhibit a power-conversion efficiency (PCE) of 6% along with high deformability, for which 75% of its original PCE is retained after 50 cycles of stretching under a 20% strain. Meanwhile, a representative all-polymer OPV consisting of a PTB7-th:N2200 blend, in which the N2200 has a better mechanical stretchability than that of PC 71 BM, can maintain over 96% of its original PCE after 50 cycles of stretching (under a 20% strain) without employing the wrinkled scaffold. Such promising performance in stretchable OPVs is among the state-of-the-art results reported to date.

  1. Hybrid graphene/silicon integrated optical isolators with photonic spin–orbit interaction

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Jingwen; Sun, Xiankai, E-mail: xksun@cuhk.edu.hk [Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories (Hong Kong); Shun Hing Institute of Advanced Engineering, The Chinese University of Hong Kong, Shatin, New Territories (Hong Kong); Xi, Xiang; Yu, Zejie [Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories (Hong Kong)

    2016-04-11

    Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphene's magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spins exhibit different responses to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 μm. Featuring graphene's CMOS compatibility and substantially reduced device footprint, our proposal sheds light on monolithic integration of nonreciprocal photonic devices.

  2. Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers.

    Science.gov (United States)

    Li, Nanxi; Magden, Emir Salih; Su, Zhan; Singh, Neetesh; Ruocco, Alfonso; Xin, Ming; Byrd, Matthew; Callahan, Patrick T; Bradley, Jonathan D B; Baiocco, Christopher; Vermeulen, Diedrik; Watts, Michael R

    2018-02-05

    Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al 2 O 3 :Ho 3+ glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and Al 2 O 3 :Ho 3+ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.

  3. Integrating Silicon detector with segmentation for scanning transmission X-ray microscopy

    Science.gov (United States)

    Feser, Michael; Hornberger, Benjamin; Jacobsen, Chris; De Geronimo, Gianluigi; Rehak, Pavel; Holl, Peter; Strüder, Lothar

    2006-09-01

    Scanning transmission X-ray microscopes require detectors with high quantum efficiency and wide dynamic range. While large area detectors provide absorption contrast, the addition of spatial segmentation adds phase contrast imaging capabilities. We describe a charge integrating Silicon detector for use at energies from 200-1000 eV. The detector uses patterned rectifying junctions on high-resistivity n-type Silicon, with separate current readout for each segment. The detector has been subdivided into eight regions arranged in a circular geometry according to the beam profile in a scanning X-ray microscope. The uncooled chip is fully depleted by a positive bias voltage applied at the ohmic contact on the back side. X-rays are collected on the radiation-hard back side with very high efficiency ( >75% for 250 eV X-rays), and compact, low-noise electronics integrate the current from the detector segments. The RMS noise of the combined system is about 500 electrons/channel for a 1 ms integration time, which is equivalent to about five photons per channel at 360 eV X-ray energy.

  4. Integrating Silicon detector with segmentation for scanning transmission X-ray microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Feser, Michael [Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY 11794-3800 (United States); Hornberger, Benjamin [Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY 11794-3800 (United States)]. E-mail: benjamin.hornberger@stonybrook.edu; Jacobsen, Chris [Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY 11794-3800 (United States); De Geronimo, Gianluigi [Brookhaven National Laboratory, Instrumentation Division, Upton, NY 11973 (United States); Rehak, Pavel [Brookhaven National Laboratory, Instrumentation Division, Upton, NY 11973 (United States)]. E-mail: rehak@bnl.gov; Holl, Peter [PNSensor GmbH, Roemerstr. 28, 80803 Munich (Germany); Strueder, Lothar [MPI fuer Extraterrestrische Physik, 85741 Garching (Germany)

    2006-09-15

    Scanning transmission X-ray microscopes require detectors with high quantum efficiency and wide dynamic range. While large area detectors provide absorption contrast, the addition of spatial segmentation adds phase contrast imaging capabilities. We describe a charge integrating Silicon detector for use at energies from 200-1000eV. The detector uses patterned rectifying junctions on high-resistivity n-type Silicon, with separate current readout for each segment. The detector has been subdivided into eight regions arranged in a circular geometry according to the beam profile in a scanning X-ray microscope. The uncooled chip is fully depleted by a positive bias voltage applied at the ohmic contact on the back side. X-rays are collected on the radiation-hard back side with very high efficiency (>75% for 250eV X-rays), and compact, low-noise electronics integrate the current from the detector segments. The RMS noise of the combined system is about 500 electrons/channel for a 1ms integration time, which is equivalent to about five photons per channel at 360eV X-ray energy.

  5. Integration of the end cap TEC+ of the CMS silicon strip tracker

    Energy Technology Data Exchange (ETDEWEB)

    Bremer, Richard

    2008-04-28

    CMS is the first large experiment of high-energy particle physics whose inner tracking system is exclusively instrumented with silicon detector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction point in 10-12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completion of the end caps of the tracking system. The institute played a leading role in the end cap design, produced virtually all support structures and several important electrical components, designed and built the laser alignment system of the tracker, performed system tests and finally integrated one of the two end caps in Aachen. This integration constitutes the central part of the present thesis work. The main focus was on the development of methods to recognise defects early in the integration process and to assert the detector's functionality. Characteristic quantities such as the detector noise or the optical gain of the readout chain were determined during integration as well as during a series of tests performed after transport of the end cap from Aachen to CERN. The procedures followed during the mechanical integration of the detector and during the commissioning of integrated sectors are explained, and the software packages developed for quality assurance are described. In addition, results of the detector readout are presented. During the integration phase, sub-structures of the end cap - named petals - were subjected to a reception test which has also been designed and operated as part of this thesis work. The test setup and software developed for the test are introduced and an account of the analysis of the recorded data is given. Before the end cap project entered the production phase, a final test beam experiment was performed in which the suitability of a system of two fully equipped petals for operation at the LHC was checked. The measured ratio of the signal induced in the silicon sensors by minimal ionising

  6. Integration of the end cap TEC+ of the CMS silicon strip tracker

    International Nuclear Information System (INIS)

    Bremer, Richard

    2008-01-01

    CMS is the first large experiment of high-energy particle physics whose inner tracking system is exclusively instrumented with silicon detector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction point in 10-12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completion of the end caps of the tracking system. The institute played a leading role in the end cap design, produced virtually all support structures and several important electrical components, designed and built the laser alignment system of the tracker, performed system tests and finally integrated one of the two end caps in Aachen. This integration constitutes the central part of the present thesis work. The main focus was on the development of methods to recognise defects early in the integration process and to assert the detector's functionality. Characteristic quantities such as the detector noise or the optical gain of the readout chain were determined during integration as well as during a series of tests performed after transport of the end cap from Aachen to CERN. The procedures followed during the mechanical integration of the detector and during the commissioning of integrated sectors are explained, and the software packages developed for quality assurance are described. In addition, results of the detector readout are presented. During the integration phase, sub-structures of the end cap - named petals - were subjected to a reception test which has also been designed and operated as part of this thesis work. The test setup and software developed for the test are introduced and an account of the analysis of the recorded data is given. Before the end cap project entered the production phase, a final test beam experiment was performed in which the suitability of a system of two fully equipped petals for operation at the LHC was checked. The measured ratio of the signal induced in the silicon sensors by minimal ionising particles

  7. The SuperB Silicon Vertex Tracker and 3D vertical integration

    CERN Document Server

    Re, Valerio

    2011-01-01

    The construction of the SuperB high luminosity collider was approved and funded by the Italian government in 2011. The performance specifications set by the target luminosity of this machine (> 10^36 cm^-2 s^-1) ask for the development of a Silicon Vertex Tracker with high resolution, high tolerance to radiation and excellent capability of handling high data rates. This paper reviews the R&D activity that is being carried out for the SuperB SVT. Special emphasis is given to the option of exploiting 3D vertical integration to build advanced pixel sensors and readout electronics that are able to comply with SuperB vertexing requirements.

  8. Integrated programmable photonic filter on the silicon-on-insulator platform.

    Science.gov (United States)

    Liao, Shasha; Ding, Yunhong; Peucheret, Christophe; Yang, Ting; Dong, Jianji; Zhang, Xinliang

    2014-12-29

    We propose and demonstrate a silicon-on-insulator (SOI) on-chip programmable filter based on a four-tap finite impulse response structure. The photonic filter is programmable thanks to amplitude and phase modulation of each tap controlled by thermal heaters. We further demonstrate the tunability of the filter central wavelength, bandwidth and variable passband shape. The tuning range of the central wavelength is at least 42% of the free spectral range. The bandwidth tuning range is at least half of the free spectral range. Our scheme has distinct advantages of compactness, capability for integrating with electronics.

  9. Physical and electrical characterization of corundum substrates and epitaxial silicon layers in view of fabricating integrated circuits

    International Nuclear Information System (INIS)

    Trilhe, J.; Legal, H.; Rolland, G.

    1975-01-01

    The S.O.S. technology (silicon on insulating substrate) allows compact, radiation hard, fast integrated circuits to be fabricated. It is noticeable that complex integrated circuits on corundum substrates obtained with various fabrication processes have various electrical characteristics. Possible correlations between the macroscopic defects of the substrate and the electrical characteristics of the circuit were investigated [fr

  10. Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s.

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2016-12-26

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

  11. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

    Science.gov (United States)

    Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

    2017-12-01

    One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

  12. Stretchable living materials and devices with hydrogel-elastomer hybrids hosting programmed cells.

    Science.gov (United States)

    Liu, Xinyue; Tang, Tzu-Chieh; Tham, Eléonore; Yuk, Hyunwoo; Lin, Shaoting; Lu, Timothy K; Zhao, Xuanhe

    2017-02-28

    Living systems, such as bacteria, yeasts, and mammalian cells, can be genetically programmed with synthetic circuits that execute sensing, computing, memory, and response functions. Integrating these functional living components into materials and devices will provide powerful tools for scientific research and enable new technological applications. However, it has been a grand challenge to maintain the viability, functionality, and safety of living components in freestanding materials and devices, which frequently undergo deformations during applications. Here, we report the design of a set of living materials and devices based on stretchable, robust, and biocompatible hydrogel-elastomer hybrids that host various types of genetically engineered bacterial cells. The hydrogel provides sustainable supplies of water and nutrients, and the elastomer is air-permeable, maintaining long-term viability and functionality of the encapsulated cells. Communication between different bacterial strains and with the environment is achieved via diffusion of molecules in the hydrogel. The high stretchability and robustness of the hydrogel-elastomer hybrids prevent leakage of cells from the living materials and devices, even under large deformations. We show functions and applications of stretchable living sensors that are responsive to multiple chemicals in a variety of form factors, including skin patches and gloves-based sensors. We further develop a quantitative model that couples transportation of signaling molecules and cellular response to aid the design of future living materials and devices.

  13. Recess integration of micro-cleaved laser diode platelets with dielectric waveguides on silicon

    Science.gov (United States)

    Fonstad, Clifton G., Jr.; Rumpler, Joseph J.; Barkley, Edward R.; Perkins, James M.; Famenini, Shaya

    2008-02-01

    Ongoing research directed at integrating 1.55 μm III-V ridge waveguide gain elements (i.e. diode lasers and semiconductor optical amplifiers) co-axially aligned with, and coupled to, silicon oxy-nitride waveguides on silicon substrates is presented. The integration techniques used are highly modular and consistent with fabricating waveguides on Si-CMOS wafers and doing the integration of the III-V gain elements after all standard front- and back-end Si processing has been completed. A novel micro-cleaving technique is used to produce active ridge waveguide platelets on the order of 6 µm thick and 100 μm wide, with precisely controlled lengths, in the current work 300 +/- 1 μm, and cleaved end facets. Typical ridge guide micro-cleaved platelet lasers have thresholds under 30 mA. Micro-cleaved platelets are bonded within dielectric recesses etched through the oxy-nitride (SiO xN y) waveguides on a wafer so the ridge and SiO xN y waveguides are co-axially aligned. Transmission measurements indicate coupling losses are as low as 5 db with air filling the gaps between the waveguide ends, and measurements made through filled gaps indicate that the coupling losses can be reduced to below 1.5 dB with a high index (n = 2.2) dielectric fill. Simulations indicate that with further optimization of the mode profile in the III-V waveguide the loss can be reduced to below 1 dB. The paper concludes with a discussion of device design and optimization for co-axial recess integration, and with a comparison of co-axial coupling with the hybrid evanescent vertical coupling III-V/Si integration approach recently introduced by researchers at UCSB and Intel.

  14. Radio-frequency flexible and stretchable electronics: the need, challenges and opportunities

    Science.gov (United States)

    Jung, Yei Hwan; Seo, Jung-Hun; Zhang, Huilong; Lee, Juhwan; Cho, Sang June; Chang, Tzu-Hsuan; Ma, Zhenqiang

    2017-05-01

    Successful integration of ultrathin flexible or stretchable systems with new applications, such as medical devices and biodegradable electronics, have intrigued many researchers and industries around the globe to seek materials and processes to create high-performance, non-invasive and cost-effective electronics to match those of state-of-the-art devices. Nevertheless, the crucial concept of transmitting data or power wirelessly for such unconventional devices has been difficult to realize due to limitations of radio-frequency (RF) electronics in individual components that form a wireless circuitry, such as antenna, transmission line, active devices, passive devices etc. To overcome such challenges, these components must be developed in a step-by-step manner, as each component faces a number of different challenges in ultrathin formats. Here, we report on materials and design considerations for fabricating flexible and stretchable electronics systems that operate in the microwave level. High-speed flexible active devices, including cost effective Si-based strained MOSFETs, GaAs-based HBTs and GaN-based HEMTs, performing at multi-gigahertz frequencies are presented. Furthermore, flexible or stretchable passive devices, including capacitors, inductors and transmission lines that are vital parts of a microwave circuitry are also demonstrated. We also present unique applications using the presented flexible or stretchable RF components, including wearable RF electronics and biodegradable RF electronics, which were impossible to achieve using conventional rigid, wafer-based technology. Further opportunities like implantable systems exist utilizing such ultrathin RF components, which are discussed in this report as well.

  15. Integration Science and Technology of Silicon-Based Ceramics and Composites:Technical Challenges and Opportunities

    Science.gov (United States)

    Singh, M.

    2013-01-01

    Ceramic integration technologies enable hierarchical design and manufacturing of intricate ceramic and composite parts starting with geometrically simpler units that are subsequently joined to themselves and/or to metals to create components with progressively higher levels of complexity and functionality. However, for the development of robust and reliable integrated systems with optimum performance for high temperature applications, detailed understanding of various thermochemical and thermomechanical factors is critical. Different technical approaches are required for the integration of ceramic to ceramic and ceramic to metal systems. Active metal brazing, in particular, is a simple and cost-effective method to integrate ceramic to metallic components. Active braze alloys usually contain a reactive filler metal (e.g., Ti, Cr, V, Hf etc) that promotes wettability and spreading by inducing chemical reactions with the ceramics and composites. In this presentation, various examples of brazing of silicon nitride to themselves and to metallic systems are presented. Other examples of joining of ceramic composites (C/SiC and SiC/SiC) using ceramic interlayers and the resulting microstructures are also presented. Thermomechanical characterization of joints is presented for both types of systems. In addition, various challenges and opportunities in design, fabrication, and testing of integrated similar (ceramic-ceramic) and dissimilar (ceramic-metal) material systems will be discussed. Potential opportunities and need for the development of innovative design philosophies, approaches, and integrated system testing under simulated application conditions will also be presented.

  16. The NeuroMedicator—a micropump integrated with silicon microprobes for drug delivery in neural research

    International Nuclear Information System (INIS)

    Spieth, S; Schumacher, A; Kallenbach, C; Messner, S; Zengerle, R

    2012-01-01

    The NeuroMedicator is a micropump integrated with application-specific silicon microprobes aimed for drug delivery in neural research with small animals. The micropump has outer dimensions of 11 × 15 × 3 mm 3 and contains 16 reservoirs each having a capacity of 0.25 µL. Thereby, the reservoirs are interconnected in a pearl-chain-like manner and are connected to two 8 mm long silicon microprobes. Each microprobe has a cross-sectional area of 250 × 250 µm 2 and features an integrated drug delivery channel of 50 × 50 µm 2 with an outlet of 25 µm in diameter. The drug is loaded to the micropump prior to implantation. After implantation, individual 0.25 µL portions of drug can be sequentially released by short heating pulses applied to a polydimethylsiloxane (PDMS) layer containing Expancel® microspheres. Due to local, irreversible thermal expansion of the elastic composite material, the drug is displaced from the reservoirs and released through the microprobe outlet directly to the neural tissue. While implanted, leakage of drug by diffusion occurs due to the open microprobe outlets. The maximum leakage within the first three days after implantation is calculated to be equivalent to 0.06 µL of drug solution. (paper)

  17. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    Science.gov (United States)

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  18. Integrated graphene based modulators enabled by interfacing plasmonic slot and silicon waveguides

    DEFF Research Database (Denmark)

    Xiao, Sanshui

    Graphene has offered a new paradigm for extremely fast and active optoelectronic devices due to its unique electronic and optical properties [1]. With the combination of high-index dielectric waveguides/resonators, several integrated graphene-based optical modulators have already been demonstrated...... [2,3]. However, the optical modes in these systems are inherently strongly localized in the high-index materials, thus jeopardizing light-graphene interactions. Surface plasmon polaritons have been shown the ability to manipulate light in the nanoscale, while at the same time giving possibility...... to direct more optical energy to the material interface where graphene could reside. We propose and demonstrate efficient graphene plasmonic waveguide electro-optical modulators, which are fully integrated with the silicon-on-insulator platform. We experimentally achieve the tunability of 0.13 d...

  19. Extending Moore’s Law for Silicon CMOS using More-Moore and More-than-Moore Technologies

    KAUST Repository

    Hussain, Aftab M.

    2016-12-01

    With the advancement of silicon electronics under threat from physical limits to dimensional scaling, the International Technology Roadmap for Semiconductors (ITRS) released a white paper in 2008, detailing the ways in which the semiconductor industry can keep itself continually growing in the twenty-first century. Two distinct paths were proposed: More-Moore and More-than-Moore. While More-Moore approach focuses on the continued use of state-of-the-art, complementary metal oxide semiconductor (CMOS) technology for next generation electronics, More-than-Moore approach calls for a disruptive change in the system architecture and integration strategies. In this doctoral thesis, we investigate both the approaches to obtain performance improvement in the state-of-the-art, CMOS electronics. We present a novel channel material, SiSn, for fabrication of CMOS circuits. This investigation is in line with the More-Moore approach because we are relying on the established CMOS industry infrastructure to obtain an incremental change in the integrated circuit (IC) performance by replacing silicon channel with SiSn. We report a simple, low-cost and CMOS compatible process for obtaining single crystal SiSn wafers. Tin (Sn) is deposited on silicon wafers in the form of a metallic thin film and annealed to facilitate diffusion into the silicon lattice. This diffusion provides for sufficient SiSn layer at the top surface for fabrication of CMOS devices. We report a lowering of band gap and enhanced mobility for SiSn channel MOSFETs compared to silicon control devices. We also present a process for fabrication of vertically integrated flexible silicon to form 3D integrated circuits. This disruptive change in the state-of-the-art, in line with the More-than-Moore approach, promises to increase the performance per area of a silicon chip. We report a process for stacking and bonding these pieces with polymeric bonding and interconnecting them using copper through silicon vias (TSVs). We

  20. Parallel Microcracks-based Ultrasensitive and Highly Stretchable Strain Sensors.

    Science.gov (United States)

    Amjadi, Morteza; Turan, Mehmet; Clementson, Cameron P; Sitti, Metin

    2016-03-02

    There is an increasing demand for flexible, skin-attachable, and wearable strain sensors due to their various potential applications. However, achieving strain sensors with both high sensitivity and high stretchability is still a grand challenge. Here, we propose highly sensitive and stretchable strain sensors based on the reversible microcrack formation in composite thin films. Controllable parallel microcracks are generated in graphite thin films coated on elastomer films. Sensors made of graphite thin films with short microcracks possess high gauge factors (maximum value of 522.6) and stretchability (ε ≥ 50%), whereas sensors with long microcracks show ultrahigh sensitivity (maximum value of 11,344) with limited stretchability (ε ≤ 50%). We demonstrate the high performance strain sensing of our sensors in both small and large strain sensing applications such as human physiological activity recognition, human body large motion capturing, vibration detection, pressure sensing, and soft robotics.

  1. Fabrication of a silver particle-integrated silicone polymer-covered metal stent against sludge and biofilm formation and stent-induced tissue inflammation.

    Science.gov (United States)

    Lee, Tae Hoon; Jang, Bong Seok; Jung, Min Kyo; Pack, Chan Gi; Choi, Jun-Ho; Park, Do Hyun

    2016-10-14

    To reduce tissue or tumor ingrowth, covered self-expandable metal stents (SEMSs) have been developed. The effectiveness of covered SEMSs may be attenuated by sludge or stone formation or by stent clogging due to the formation of biofilm on the covering membrane. In this study, we tested the hypothesis that a silicone membrane containing silver particles (Ag-P) would prevent sludge and biofilm formation on the covered SEMS. In vitro, the Ag-P-integrated silicone polymer-covered membrane exhibited sustained antibacterial activity, and there was no definite release of silver ions from the Ag-P-integrated silicone polymer membrane at any time point. Using a porcine stent model, in vivo analysis demonstrated that the Ag-P-integrated silicone polymer-covered SEMS reduced the thickness of the biofilm and the quantity of sludge formed, compared with a conventional silicone-covered SEMS. In vivo, the release of silver ions from an Ag-P-integrated silicone polymer-covered SEMS was not detected in porcine serum. The Ag-P-integrated silicone polymer-covered SEMS also resulted in significantly less stent-related bile duct and subepithelium tissue inflammation than a conventional silicone polymer-covered SEMS. Therefore, the Ag-P-integrated silicone polymer-covered SEMS reduced sludge and biofilm formation and stent-induced pathological changes in tissue. This novel SEMS may prolong the stent patency in clinical application.

  2. Flexible and stretchable power sources for wearable electronics

    OpenAIRE

    Zamarayeva, Alla M.; Ostfeld, Aminy E.; Wang, Michael; Duey, Jerica K.; Deckman, Igal; Lech?ne, Balthazar P.; Davies, Greg; Steingart, Daniel A.; Arias, Ana Claudia

    2017-01-01

    Flexible and stretchable power sources represent a key technology for the realization of wearable electronics. Developing flexible and stretchable batteries with mechanical endurance that is on par with commercial standards and offer compliance while retaining safety remains a significant challenge. We present a unique approach that demonstrates mechanically robust, intrinsically safe silver-zinc batteries. This approach uses current collectors with enhanced mechanical design, such as helical...

  3. Silicon Hard-Stop Mesas for 3D Integration of Superconducting Qubits

    Science.gov (United States)

    Kim, David; Rosenberg, Danna; Osadchy, Brenda; Calusine, Greg; Das, Rabindra; Melville, Alexander; Yoder, Jonilyn; Yost, Donna-Ruth; Racz, Livia; Oliver, William

    As quantum computing with superconducting qubits advances past the few-qubit stage, implementing 3D packaging/integration to route readout/control lines will become increasingly important. One approach is to bond chips that perform different functions using indium bump bonds. Because indium is malleable, however, achieving the desired spacing and tilt between two chips can be challenging. We present an approach based on etching several microns into the silicon substrate to produce hard stop silicon posts. Since this process involves etching into a pristine substrate, it is essential to evaluate its impact on qubit performance. We report the etched surface's effect on the resonator quality factor and qubit coherence time, as well as the improvement in planarity and tilt. This research was funded in part by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA) and by the Assistant Secretary of Defense for Research & Engineering under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

  4. Performance of integrated ΔE-E silicon detector telescope with light charged particles and fission fragments

    International Nuclear Information System (INIS)

    Singh, Arvind; Santra, S.; Topkar, Anita; Mahata, K.; Mukhopadhyay, P.K.; Chatterjee, A.; Pithawa, C.K.; Rath, P.K.; Parihari, A.

    2012-01-01

    Thin ΔE detectors with thickness of a few microns are used for study of nuclear reactions involving heavy charged particles such as fission fragments. Such detectors are difficult to fabricate using conventional silicon etching techniques and are also difficult to handle as they are very fragile. To overcome these problems, a novel detector in which the E and ΔE detectors are integrated on the same silicon chip has been developed. The performance of the first prototype has been presented earlier. In this paper, the performance of the second prototype with light charged particles (measured in 7 Li + 12 C reaction) and fission fragments (measured in 19 F + 209 Bi reaction) has been presented. The results presented in this paper demonstrate that the integrated detector has performance as good as that of a silicon detector telescope which incorporates commercially available physically separate E and ΔE detectors

  5. Transfer printing and patterning of stretchable electrospun film

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Yongqing; Huang, YongAn, E-mail: yahuang@hust.edu.cn; Yin, Zhouping

    2013-10-01

    Electrospinning is an effective method for nanofiber production, but seldom used in the fabrication of patterned structures directly due to the whipping instability of the electrospinning jet. The whipping instability of electrospinning is adopted to fabricate stretchable patterned film by combination with an improved thermal transfer printing. The electrospun film is composed of small-scale wavy/coiled fibers, which make the patterned film highly stretchable. The optimal process parameters of whipping-based electrospinning are investigated to fabricate electrospun film with uniform and compact wavy/coiled fiber. Then the transfer printing and thermal detachment lithography are studied to generate patterned film, including the pressure, temperature, and peeling-off speed. Finally, the stretchability of the patterned electrospun film is studied through experiment and finite element analysis. It may open a cost-effective and high-throughput way for flexible/stretchable electronics fabrication. - Highlights: • Stretchable nonwoven film with small-scale wavy fibers is fabricated. • The film is transferred and patterned by thermal detachment lithography. • The patterned film is validated with high stretchability.

  6. Highly-stretchable 3D-architected Mechanical Metamaterials.

    Science.gov (United States)

    Jiang, Yanhui; Wang, Qiming

    2016-09-26

    Soft materials featuring both 3D free-form architectures and high stretchability are highly desirable for a number of engineering applications ranging from cushion modulators, soft robots to stretchable electronics; however, both the manufacturing and fundamental mechanics are largely elusive. Here, we overcome the manufacturing difficulties and report a class of mechanical metamaterials that not only features 3D free-form lattice architectures but also poses ultrahigh reversible stretchability (strain > 414%), 4 times higher than that of the existing counterparts with the similar complexity of 3D architectures. The microarchitected metamaterials, made of highly stretchable elastomers, are realized through an additive manufacturing technique, projection microstereolithography, and its postprocessing. With the fabricated metamaterials, we reveal their exotic mechanical behaviors: Under large-strain tension, their moduli follow a linear scaling relationship with their densities regardless of architecture types, in sharp contrast to the architecture-dependent modulus power-law of the existing engineering materials; under large-strain compression, they present tunable negative-stiffness that enables ultrahigh energy absorption efficiencies. To harness their extraordinary stretchability and microstructures, we demonstrate that the metamaterials open a number of application avenues in lightweight and flexible structure connectors, ultraefficient dampers, 3D meshed rehabilitation structures and stretchable electronics with designed 3D anisotropic conductivity.

  7. Transfer printing and patterning of stretchable electrospun film

    International Nuclear Information System (INIS)

    Duan, Yongqing; Huang, YongAn; Yin, Zhouping

    2013-01-01

    Electrospinning is an effective method for nanofiber production, but seldom used in the fabrication of patterned structures directly due to the whipping instability of the electrospinning jet. The whipping instability of electrospinning is adopted to fabricate stretchable patterned film by combination with an improved thermal transfer printing. The electrospun film is composed of small-scale wavy/coiled fibers, which make the patterned film highly stretchable. The optimal process parameters of whipping-based electrospinning are investigated to fabricate electrospun film with uniform and compact wavy/coiled fiber. Then the transfer printing and thermal detachment lithography are studied to generate patterned film, including the pressure, temperature, and peeling-off speed. Finally, the stretchability of the patterned electrospun film is studied through experiment and finite element analysis. It may open a cost-effective and high-throughput way for flexible/stretchable electronics fabrication. - Highlights: • Stretchable nonwoven film with small-scale wavy fibers is fabricated. • The film is transferred and patterned by thermal detachment lithography. • The patterned film is validated with high stretchability

  8. III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

    Science.gov (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-08-04

    The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

  9. A monolithically integrated detector-preamplifier on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am 241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm 2 detector with on-chip amplifier in an experimental setup with substantial external pickup

  10. Ultra-compact polarization rotation in integrated silicon photonics using digital metamaterials.

    Science.gov (United States)

    Majumder, Apratim; Shen, Bing; Polson, Randy; Menon, Rajesh

    2017-08-21

    Polarization controlling devices such as polarization splitters and rotators are critical elements in integrated-photonic circuits that function via polarization-diversity schemes. Here, we present the design of an ultra-compact nanophotonic-polarization rotator (NPR) that rotates the polarization state from TE to TM with a simulated extinction ratio of 23dB over a coupling length of 5µm and an operating bandwidth of 40nm. This all-silicon device can be fabricated in a single lithography step and we have fabricated and characterized a preliminary device exhibiting 9dB extinction ratio. To emphasize the generality of our methodology, we also designed a NPR that can rotate the polarization state from TM to TE as well. A small device footprint is enabled by the evanescent coupling of guided modes enabled by computationally designed digital metamaterials.

  11. Mechanical and Cooling Design Studies for an Integrated Stave Concept for Silicon Strip Detectors for the Super LHC

    CERN Document Server

    Cepeda, M; Gilchriese, M G D; Haber, C; Miller, W K; Miller, W O; Post, R

    2008-01-01

    Design studies for the mechanical and thermal performance of an integrated stave concept for large-area silicon-strip detector support and cooling are described. The fabrication and test of small-scale prototypes are also presented. Finite-element and other calculations have been completed to develop the design concept and to compare with the measurements on prototypes.

  12. Silicon-Based Integration of Groups III, IV, V Chemical Vapor Depositions in High-Quality Photodiodes

    NARCIS (Netherlands)

    Sammak, A.

    2012-01-01

    Heterogeneous integration of III-V semiconductors with silicon (Si) technology is an interesting approach to utilize the advantages of both high-speed photonic and electronic properties. The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with

  13. Joining and Integration of Silicon Carbide-Based Materials for High Temperature Applications

    Science.gov (United States)

    Halbig, Michael C.; Singh, Mrityunjay

    2016-01-01

    Advanced joining and integration technologies of silicon carbide-based ceramics and ceramic matrix composites are enabling for their implementation into wide scale aerospace and ground-based applications. The robust joining and integration technologies allow for large and complex shapes to be fabricated and integrated with the larger system. Potential aerospace applications include lean-direct fuel injectors, thermal actuators, turbine vanes, blades, shrouds, combustor liners and other hot section components. Ground based applications include components for energy and environmental systems. Performance requirements and processing challenges are identified for the successful implementation different joining technologies. An overview will be provided of several joining approaches which have been developed for high temperature applications. In addition, various characterization approaches were pursued to provide an understanding of the processing-microstructure-property relationships. Microstructural analysis of the joint interfaces was conducted using optical, scanning electron, and transmission electron microscopy to identify phases and evaluate the bond quality. Mechanical testing results will be presented along with the need for new standardized test methods. The critical need for tailoring interlayer compositions for optimum joint properties will also be highlighted.

  14. Facile Fabrication of Highly Stretchable Nanocrack Silver Film using Magnetron Sputtering

    Science.gov (United States)

    Yang, Cancan; Yu, Mei; Wang, Chong; Yu, Zhe

    2017-11-01

    Recently, stretchable electronic devices have been growing rapidly, such as bioelectrical interfaces, wearable and implantable electronics. Apparently, their stretchability highly depends on the surface structure. In this paper, highly stretchable nanocrack silver films were deposited using magnetron sputtering, which can be stretched by a maximum 150% strain while maintaining great electrical conductivity. Experimental results show that, compared to popular gold films, silver has relatively high electrical conductivity and better stretchability.

  15. Structural Integrity of Flat Silicon Panels for Nanosatellites : Modeling and Testing

    OpenAIRE

    Nguyen, Hugo; Thorslund, Robert; Thornell, Greger; Köhler, Johan; Stenmark, Lars

    2006-01-01

    To utilize the high mass fraction of silicon material in a nanosatellite based on micro-electro-mechanical systems, part of the structural function has been assigned to the flat silicon stacks embracing these systems. Three modules for destructive testing in bending, warping and shearing cases were built with 68x68x1 mm silicon stacks bonded in aluminium frames by in-situ casting of silicone rubber. The rubber served as the deformation zone between the stiff and brittle silicon stacks and the...

  16. Mechanical and Electrical Ageing Effects on the Long-Term Stretching of Silicone Dielectric Elastomers with Soft Fillers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Zakaria, Shamsul Bin; Yu, Liyun

    2016-01-01

    Dielectric elastomer materials for actuators need to be soft and stretchable while possessing high dielectric permittivity. Soft silicone elastomers can be obtained through the use of silicone oils, while enhanced permittivity can be obtained through the use of dipolar groups on the polymer...

  17. Adjustable optical response of amorphous silicon nanowires integrated with thin films.

    Science.gov (United States)

    Dhindsa, Navneet; Walia, Jaspreet; Pathirane, Minoli; Khodadad, Iman; Wong, William S; Saini, Simarjeet Singh

    2016-04-08

    We experimentally demonstrate a new optical platform by integrating hydrogenated amorphous silicon nanowire arrays with thin films deposited on transparent substrates like glass. A 535 nm thick thin film is anisotropically etched to fabricate vertical nanowire arrays of 100 nm diameter arranged in a square lattice. Adjusting the nanowire length, and consequently the thin film thickness permits the optical properties of this configuration to be tuned for either transmission filter response or enhanced broadband absorption. Vivid structural colors are also achieved in reflection and transmission. The optical properties of the platform are investigated for three different etch depths. Transmission filter response is achieved for a configuration with nanowires on glass without any thin film. Alternatively, integrating thin film with nanowires increases the absorption efficiency by ∼97% compared to the thin film starting layer and by ∼78% over nanowires on glass. The ability to tune the optical response of this material in this fashion makes it a promising platform for high performance photovoltaics, photodetectors and sensors.

  18. An integrated nonlinear optical loop mirror in silicon photonics for all-optical signal processing

    Directory of Open Access Journals (Sweden)

    Zifei Wang

    2018-02-01

    Full Text Available The nonlinear optical loop mirror (NOLM has been studied for several decades and has attracted considerable attention for applications in high data rate optical communications and all-optical signal processing. The majority of NOLM research has focused on silica fiber-based implementations. While various fiber designs have been considered to increase the nonlinearity and manage dispersion, several meters to hundreds of meters of fiber are still required. On the other hand, there is increasing interest in developing photonic integrated circuits for realizing signal processing functions. In this paper, we realize the first-ever passive integrated NOLM in silicon photonics and demonstrate its application for all-optical signal processing. In particular, we show wavelength conversion of 10 Gb/s return-to-zero on-off keying (RZ-OOK signals over a wavelength range of 30 nm with error-free operation and a power penalty of less than 2.5 dB, we achieve error-free nonreturn to zero (NRZ-to-RZ modulation format conversion at 10 Gb/s also with a power penalty of less than 2.8 dB, and we obtain error-free all-optical time-division demultiplexing of a 40 Gb/s RZ-OOK data signal into its 10 Gb/s tributary channels with a maximum power penalty of 3.5 dB.

  19. Integrated USB based readout interface for silicon strip detectors of the ATLAS SCT module

    Science.gov (United States)

    Masek, P.; Linhart, V.; Granja, C.; Pospisil, S.; Husak, M.

    2011-12-01

    An integrated portable USB based readout interface for the ATLAS semiconductor trackers (SCT) has been built. The ATLAS SCT modules are large area silicon strip detectors designed for tracking of high-energy charged particles resulting in collisions on Large Hadron Collider (LHC) in CERN. These modules can be also used on small accelerators for medical or industry applications where a compact and configurable readout interface would be useful. A complete custom made PC-host software tool was written for Windows platform for control and DAQ with build-in online visualization. The new constructed interface provides integrated power, control and DAQ and configurable communication between the detector module and the controlling PC. The interface is based on the Field Programmable Gate Array (FPGA) and the high speed USB 2.0 standard. This design permits to operate the modules under high particle fluence while minimizing the dead time of the whole detection system. Utilization of the programmable device simplifies the operation and permits future expansion of the functionality without any hardware changes. The device includes the high voltage source for detector bias up to 500 V and it is equipped with number of devices for monitoring the operation and conditions of measurement (temperature, humidity, voltage). These features are particularly useful as the strip detector must be operated in a well controlled environment. The operation of the interface will be demonstrated on data measured with different particles from radiation sources.

  20. Quantum Coherent States and Path Integral Method to Stochastically Determine the Anisotropic Volume Expansion in Lithiated Silicon Nanowires

    Directory of Open Access Journals (Sweden)

    Donald C. Boone

    2017-10-01

    Full Text Available This computational research study will analyze the multi-physics of lithium ion insertion into a silicon nanowire in an attempt to explain the electrochemical kinetics at the nanoscale and quantum level. The electron coherent states and a quantum field version of photon density waves will be the joining theories that will explain the electron-photon interaction within the lithium-silicon lattice structure. These two quantum particles will be responsible for the photon absorption rate of silicon atoms that are hypothesized to be the leading cause of breaking diatomic silicon covalent bonds that ultimately leads to volume expansion. It will be demonstrated through the combination of Maxwell stress tensor, optical amplification and path integrals that a stochastic analyze using a variety of Poisson distributions that the anisotropic expansion rates in the <110>, <111> and <112> orthogonal directions confirms the findings ascertained in previous works made by other research groups. The computational findings presented in this work are similar to those which were discovered experimentally using transmission electron microscopy (TEM and simulation models that used density functional theory (DFT and molecular dynamics (MD. The refractive index and electric susceptibility parameters of lithiated silicon are interwoven in the first principle theoretical equations and appears frequently throughout this research presentation, which should serve to demonstrate the importance of these parameters in the understanding of this component in lithium ion batteries.

  1. Development and miniaturization of a photoacoustic silicon integrated spectrometer for trace gas analysis; Etude et developpement d`un spectrometre photoacoustique integre sur silicium pour analyse de gaz

    Energy Technology Data Exchange (ETDEWEB)

    Jourdain, A.

    1998-10-29

    The study deals with the integration on silicon wafers of an infrared spectrometer for carbon dioxide measurements. Photoacoustic detection that measures a differential pressure in a cavity turns out to be the best spectroscopic technique for miniaturization and integration. The micro-system is composed of two main components: an infrared light source on a silicon nitride membrane and a component integrating a tunable optical filter, a microphone for detection and a micro-cavity. After a theoretical study of the different components, each element is realized with the microelectronic techniques such as photolithography, thin films deposits and dry and wet etching. A resin sealing of all the different elements realizes the final micro-spectrophotometer. A characterization of the components is done thanks to the realization of an electronic specific set-up. (author) 107 refs.

  2. Auxetic Mechanical Metamaterials to Enhance Sensitivity of Stretchable Strain Sensors.

    Science.gov (United States)

    Jiang, Ying; Liu, Zhiyuan; Matsuhisa, Naoji; Qi, Dianpeng; Leow, Wan Ru; Yang, Hui; Yu, Jiancan; Chen, Geng; Liu, Yaqing; Wan, Changjin; Liu, Zhuangjian; Chen, Xiaodong

    2018-03-01

    Stretchable strain sensors play a pivotal role in wearable devices, soft robotics, and Internet-of-Things, yet these viable applications, which require subtle strain detection under various strain, are often limited by low sensitivity. This inadequate sensitivity stems from the Poisson effect in conventional strain sensors, where stretched elastomer substrates expand in the longitudinal direction but compress transversely. In stretchable strain sensors, expansion separates the active materials and contributes to the sensitivity, while Poisson compression squeezes active materials together, and thus intrinsically limits the sensitivity. Alternatively, auxetic mechanical metamaterials undergo 2D expansion in both directions, due to their negative structural Poisson's ratio. Herein, it is demonstrated that such auxetic metamaterials can be incorporated into stretchable strain sensors to significantly enhance the sensitivity. Compared to conventional sensors, the sensitivity is greatly elevated with a 24-fold improvement. This sensitivity enhancement is due to the synergistic effect of reduced structural Poisson's ratio and strain concentration. Furthermore, microcracks are elongated as an underlying mechanism, verified by both experiments and numerical simulations. This strategy of employing auxetic metamaterials can be further applied to other stretchable strain sensors with different constituent materials. Moreover, it paves the way for utilizing mechanical metamaterials into a broader library of stretchable electronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. A 12-bit SAR ADC integrated on a multichannel silicon drift detector readout IC

    International Nuclear Information System (INIS)

    Schembari, F.; Bellotti, G.; Fiorini, C.

    2016-01-01

    A 12-bit analog-to-digital converter (ADC) addressed to Silicon-Drift Detectors (SDDs) multichannel readout ASICs for X- and gamma-ray applications is presented. Aiming at digitizing output multiplexed data from the upstream analog filters banks, the converter must ensure 11-bit accuracy and a sampling frequency of about 5 MS/s. The ADC architecture is the charge-redistribution (CR) successive-approximation register (SAR). A fully differential topology has also been chosen for better rejection of common-mode noise and disturbances. The internal DAC is made of binary-scaled capacitors, whose bottom plates are switched by the SAR logic to perform the binary search of the analog input value by means of the monotonic switching scheme. The A/D converter is integrated on SFERA, a multichannel ASIC fabricated in a standard CMOS 0.35 μm 3.3 V technology and it occupies an area of 0.42 mm 2 . Simulated static performance shows monotonicity over the whole input–output characteristic. The description of the circuit topology and of inner blocks architectures together with the experimental characterization is here presented. - Highlights: • X- and γ-ray spectroscopy front-ends need to readout a high number of detectors. • Design efforts are increasingly oriented to compact and low-power ASICs. • A possible solution is the on-chip integration of the analog-to-digital converter. • A 12-bit CR successive-approximation-register ADC has been developed. • It is a suitable candidate as the digitizer to be integrated in multichannel ASICs

  4. Silicon-Nitride-based Integrated Optofluidic Biochemical Sensors using a Coupled-Resonator Optical Waveguide

    Directory of Open Access Journals (Sweden)

    Jiawei eWANG

    2015-04-01

    Full Text Available Silicon nitride (SiN is a promising material platform for integrating photonic components and microfluidic channels on a chip for label-free, optical biochemical sensing applications in the visible to near-infrared wavelengths. The chip-scale SiN-based optofluidic sensors can be compact due to a relatively high refractive index contrast between SiN and the fluidic medium, and low-cost due to the complementary metal-oxide-semiconductor (CMOS-compatible fabrication process. Here, we demonstrate SiN-based integrated optofluidic biochemical sensors using a coupled-resonator optical waveguide (CROW in the visible wavelengths. The working principle is based on imaging in the far field the out-of-plane elastic-light-scattering patterns of the CROW sensor at a fixed probe wavelength. We correlate the imaged pattern with reference patterns at the CROW eigenstates. Our sensing algorithm maps the correlation coefficients of the imaged pattern with a library of calibrated correlation coefficients to extract a minute change in the cladding refractive index. Given a calibrated CROW, our sensing mechanism in the spatial domain only requires a fixed-wavelength laser in the visible wavelengths as a light source, with the probe wavelength located within the CROW transmission band, and a silicon digital charge-coupled device (CCD / CMOS camera for recording the light scattering patterns. This is in sharp contrast with the conventional optical microcavity-based sensing methods that impose a strict requirement of spectral alignment with a high-quality cavity resonance using a wavelength-tunable laser. Our experimental results using a SiN CROW sensor with eight coupled microrings in the 680nm wavelength reveal a cladding refractive index change of ~1.3 × 10^-4 refractive index unit (RIU, with an average sensitivity of ~281 ± 271 RIU-1 and a noise-equivalent detection limit (NEDL of 1.8 ×10^-8 RIU ~ 1.0 ×10^-4 RIU across the CROW bandwidth of ~1 nm.

  5. Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

    Science.gov (United States)

    Rogers, John A; Meitl, Matthew; Sun, Yugang; Ko, Heung Cho; Carlson, Andrew; Choi, Won Mook; Stoykovich, Mark; Jiang, Hanqing; Huang, Yonggang; Nuzzo, Ralph G; Zhu, Zhengtao; Menard, Etienne; Khang, Dahl-Young

    2014-05-20

    In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

  6. Polymer-embedded colloidal lead-sulfide nanocrystals integrated to vertically slotted silicon-based ring resonators for telecom applications

    Science.gov (United States)

    Humer, Markus; Guider, Romain; Hackl, Florian; Fromherz, Thomas

    2013-01-01

    The main drawback of the rapidly evolving field of silicon photonics lies in the absence of efficient monolithically integrated radiation sources as a consequence of the indirect bandgap of Si and Ge. Relevant alternatives based on the hybrid combination of Si with optically active materials have to be technologically simple, temporally stable, and provide efficient coupling to the Si waveguides. Lead-sulfide nanocrystals (NCs) were blended into a polymer resist suitable for deep-UV- and electron-beam lithography and integrated into Si-based vertically slotted waveguides and ring resonators. The polymer both stabilizes the NC's photoluminescence emission against degradation under ambient conditions and allows lithographic patterning of this compound material. After integration into the optoelectronic structures and upon optical pumping, intense photoluminescence emission from ring resonators was recorded at the output of bus-waveguides. The resonator quality factors were investigated for polymer-NC compounds with NC concentrations in the range between 0.1 and 8 vol%. The spontaneous emission rate enhancement for vertically slotted resonators was estimated to be a factor of two higher as compared to unslotted ones. The stable integration of colloidal NCs as well as the improved light coupling to silicon circuits is an important step in the development of silicon-based hybrid photonics.

  7. Highly Stretchable and Highly Conductive PEDOT:PSS/Ionic Liquid Composite Transparent Electrodes for Solution-Processed Stretchable Electronics.

    Science.gov (United States)

    Teo, Mei Ying; Kim, Nara; Kee, Seyoung; Kim, Bong Seong; Kim, Geunjin; Hong, Soonil; Jung, Suhyun; Lee, Kwanghee

    2017-01-11

    Stretchable conductive materials have received great attention owing to their potential for realizing next-generation stretchable electronics. However, the simultaneous achievement of excellent mechanical stretchability and high electrical conductivity as well as cost-effective fabrication has been a significant challenge. Here, we report a highly stretchable and highly conducting polymer that was obtained by incorporating an ionic liquid. When 1-ethyl-3-methylimidazolium tetracyanoborate (EMIM TCB) was added to an aqueous conducting polymer solution of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), it was found that EMIM TCB acts not only as a secondary dopant but also as a plasticizer for PEDOT:PSS, resulting in a high conductivity of >1000 S cm -1 with stable performance at tensile strains up to 50% and even up to 180% in combination with the prestrained substrate technique. Consequently, by exploiting the additional benefits of high transparency and solution-processability of PEDOT:PSS, we were able to fabricate a highly stretchable, semitransparent, and wholly solution-processed alternating current electroluminescent device with unimpaired performance at 50% strain by using PEDOT:PSS/EMIM TCB composite films as both bottom and top electrodes.

  8. Clean graphene interfaces by selective dry transfer for large area silicon integration

    Science.gov (United States)

    Na, S. R.; Rahimi, S.; Tao, L.; Chou, H.; Ameri, S. K.; Akinwande, D.; Liechti, K. M.

    2016-03-01

    Here we present a very fast, selective mechanical approach for transferring graphene with low levels of copper contamination from seed wafers on which it was grown to target wafers for very large scale integration (VLSI) electronics. We found that graphene/copper or copper/silicon oxide delamination paths could be selected by slow and faster separation rates, respectively. Thus graphene can be transferred to a target wafer, either exposed or protected by the seed copper layer, which can later be removed by etching. Delamination paths were identified by SEM and Raman spectroscopy. The sheet resistance of the graphene produced by the two approaches was slightly higher than graphene transferred by a PMMA wet-transfer process, indicating reduced impurity doping, and the variation in the sheet resistance values was much lower. Copper contamination levels, quantitatively established by TOF-SIMS, were several orders of magnitude lower than the values for PMMA assisted transfer. In addition, we demonstrated that top-gated transistor devices from our mechanical, delamination transferred graphene exhibited superior transistor behavior to PMMA-assisted wet transfer graphene. The adhesion energy, strength and range of the interactions were quantitatively determined by nonlinear fracture analyses, and suggest that the roughness of the interface between graphene and copper plays an important role with implications for improvements in manufacturing processes.Here we present a very fast, selective mechanical approach for transferring graphene with low levels of copper contamination from seed wafers on which it was grown to target wafers for very large scale integration (VLSI) electronics. We found that graphene/copper or copper/silicon oxide delamination paths could be selected by slow and faster separation rates, respectively. Thus graphene can be transferred to a target wafer, either exposed or protected by the seed copper layer, which can later be removed by etching

  9. Mechanical Designs for Inorganic Stretchable Circuits in Soft Electronics

    Science.gov (United States)

    Wang, Shuodao; Huang, Yonggang; Rogers, John A.

    2016-01-01

    Mechanical concepts and designs in inorganic circuits for different levels of stretchability are reviewed in this paper, through discussions of the underlying mechanics and material theories, fabrication procedures for the constituent microscale/nanoscale devices, and experimental characterization. All of the designs reported here adopt heterogeneous structures of rigid and brittle inorganic materials on soft and elastic elastomeric substrates, with mechanical design layouts that isolate large deformations to the elastomer, thereby avoiding potentially destructive plastic strains in the brittle materials. The overall stiffnesses of the electronics, their stretchability, and curvilinear shapes can be designed to match the mechanical properties of biological tissues. The result is a class of soft stretchable electronic systems that are compatible with traditional high-performance inorganic semiconductor technologies. These systems afford promising options for applications in portable biomedical and health-monitoring devices. Mechanics theories and modeling play a key role in understanding the underlining physics and optimization of these systems. PMID:27668126

  10. Stretchable microelectrode array using room-temperature liquid alloy interconnects

    International Nuclear Information System (INIS)

    Wei, P; Ziaie, B; Taylor, R; Chung, C; Higgs, G; Pruitt, B L; Ding, Z; Abilez, O J

    2011-01-01

    In this paper, we present a stretchable microelectrode array for studying cell behavior under mechanical strain. The electrode array consists of gold-plated nail-head pins (250 µm tip diameter) or tungsten micro-wires (25.4 µm in diameter) inserted into a polydimethylsiloxane (PDMS) platform (25.4 × 25.4 mm 2 ). Stretchable interconnects to the outside were provided by fusible indium-alloy-filled microchannels. The alloy is liquid at room temperature, thus providing the necessary stretchability and electrical conductivity. The electrode platform can withstand strains of up to 40% and repeated (100 times) strains of up to 35% did not cause any failure in the electrodes or the PDMS substrate. We confirmed biocompatibility of short-term culture, and using the gold pin device, we demonstrated electric field pacing of adult murine heart cells. Further, using the tungsten microelectrode device, we successfully measured depolarizations of differentiated murine heart cells from embryoid body clusters

  11. Screen-Printing Fabrication and Characterization of Stretchable Electronics

    Science.gov (United States)

    Suikkola, Jari; Björninen, Toni; Mosallaei, Mahmoud; Kankkunen, Timo; Iso-Ketola, Pekka; Ukkonen, Leena; Vanhala, Jukka; Mäntysalo, Matti

    2016-01-01

    This article focuses on the fabrication and characterization of stretchable interconnects for wearable electronics applications. Interconnects were screen-printed with a stretchable silver-polymer composite ink on 50-μm thick thermoplastic polyurethane. The initial sheet resistances of the manufactured interconnects were an average of 36.2 mΩ/◽, and half the manufactured samples withstood single strains of up to 74%. The strain proportionality of resistance is discussed, and a regression model is introduced. Cycling strain increased resistance. However, the resistances here were almost fully reversible, and this recovery was time-dependent. Normalized resistances to 10%, 15%, and 20% cyclic strains stabilized at 1.3, 1.4, and 1.7. We also tested the validity of our model for radio-frequency applications through characterization of a stretchable radio-frequency identification tag. PMID:27173424

  12. Mechanical Designs for Inorganic Stretchable Circuits in Soft Electronics.

    Science.gov (United States)

    Wang, Shuodao; Huang, Yonggang; Rogers, John A

    2015-09-01

    Mechanical concepts and designs in inorganic circuits for different levels of stretchability are reviewed in this paper, through discussions of the underlying mechanics and material theories, fabrication procedures for the constituent microscale/nanoscale devices, and experimental characterization. All of the designs reported here adopt heterogeneous structures of rigid and brittle inorganic materials on soft and elastic elastomeric substrates, with mechanical design layouts that isolate large deformations to the elastomer, thereby avoiding potentially destructive plastic strains in the brittle materials. The overall stiffnesses of the electronics, their stretchability, and curvilinear shapes can be designed to match the mechanical properties of biological tissues. The result is a class of soft stretchable electronic systems that are compatible with traditional high-performance inorganic semiconductor technologies. These systems afford promising options for applications in portable biomedical and health-monitoring devices. Mechanics theories and modeling play a key role in understanding the underlining physics and optimization of these systems.

  13. Screen-Printing Fabrication and Characterization of Stretchable Electronics.

    Science.gov (United States)

    Suikkola, Jari; Björninen, Toni; Mosallaei, Mahmoud; Kankkunen, Timo; Iso-Ketola, Pekka; Ukkonen, Leena; Vanhala, Jukka; Mäntysalo, Matti

    2016-05-13

    This article focuses on the fabrication and characterization of stretchable interconnects for wearable electronics applications. Interconnects were screen-printed with a stretchable silver-polymer composite ink on 50-μm thick thermoplastic polyurethane. The initial sheet resistances of the manufactured interconnects were an average of 36.2 mΩ/◽, and half the manufactured samples withstood single strains of up to 74%. The strain proportionality of resistance is discussed, and a regression model is introduced. Cycling strain increased resistance. However, the resistances here were almost fully reversible, and this recovery was time-dependent. Normalized resistances to 10%, 15%, and 20% cyclic strains stabilized at 1.3, 1.4, and 1.7. We also tested the validity of our model for radio-frequency applications through characterization of a stretchable radio-frequency identification tag.

  14. Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations

    International Nuclear Information System (INIS)

    Despeisse, M.

    2006-03-01

    Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

  15. Temperature and color management of silicon solar cells for building integrated photovoltaic

    Directory of Open Access Journals (Sweden)

    Amara Mohamed

    2018-01-01

    Full Text Available Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time.

  16. Metamaterial CRLH Antennas on Silicon Substrate for Millimeter-Wave Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Gheorghe Ioan Sajin

    2012-01-01

    Full Text Available The paper presents two composite right/left-handed (CRLH coplanar waveguide (CPW zeroth-order resonant (ZOR antennas which were designed, processed, and electrically characterized for applications in the millimetric wave frequency range. Two CRLH antennas were developed for f=27 GHz and f=38.5, GHz, respectively. The CRLH antenna on f=27 GHz shows a return loss of RL<−18.78 dB at f=26.88 GHz. The −3 dB radiation characteristic beamwidth was approximately 37° and the gain was Gi=2.82 dBi. The CRLH antenna on f=38.5 GHz has a return loss of RL<−38.5 dB at f=38.82 GHz and the −3 dB radiation characteristic beamwidth of approximately 17°. The gains were Gi=1.08 dBi at f=38 GHz and Gi=1.2 dBi at f=38.6 GHz. The maximum measured gain was Gi=1.75 dBi at f=38.2 GHz. It is, upon the authors' knowledge, the first report of millimeter wave CRLH antennas on silicon substrate in CPW technique for use in mm-wave monolithic integrated circuit.

  17. Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

    Directory of Open Access Journals (Sweden)

    Philip G. Neudeck

    2016-12-01

    Full Text Available The prolonged operation of semiconductor integrated circuits (ICs needed for long-duration exploration of the surface of Venus has proven insurmountably challenging to date due to the ∼ 460 °C, ∼ 9.4 MPa caustic environment. Past and planned Venus landers have been limited to a few hours of surface operation, even when IC electronics needed for basic lander operation are protected with heavily cumbersome pressure vessels and cooling measures. Here we demonstrate vastly longer (weeks electrical operation of two silicon carbide (4H-SiC junction field effect transistor (JFET ring oscillator ICs tested with chips directly exposed (no cooling and no protective chip packaging to a high-fidelity physical and chemical reproduction of Venus’ surface atmosphere. This represents more than 100-fold extension of demonstrated Venus environment electronics durability. With further technology maturation, such SiC IC electronics could drastically improve Venus lander designs and mission concepts, fundamentally enabling long-duration enhanced missions to the surface of Venus.

  18. Monolithic Mid-Infrared Integrated Photonics Using Silicon-on-Epitaxial Barium Titanate Thin Films.

    Science.gov (United States)

    Jin, Tiening; Li, Leigang; Zhang, Bruce; Lin, Hao-Yu Greg; Wang, Haiyan; Lin, Pao Tai

    2017-07-05

    Broadband mid-infrared (mid-IR) photonic circuits that integrate silicon waveguides and epitaxial barium titanate (BTO) thin films are demonstrated using the complementary metal-oxide-semiconductor process. The epitaxial BTO thin films are grown on lanthanum aluminate (LAO) substrates by the pulsed laser deposition technique, wherein a broad infrared transmittance between λ = 2.5 and 7 μm is observed. The optical waveguiding direction is defined by the high-refractive-index amorphous Si (a-Si) ridge structure developed on the BTO layer. Our waveguides show a sharp fundamental mode over the broad mid-IR spectrum, whereas its optical field distribution between the a-Si and BTO layers can be modified by varying the height of the a-Si ridge. With the advantages of broad mid-IR transparency and the intrinsic electro-optic properties, our monolithic Si on a ferroelectric BTO platform will enable tunable mid-IR microphotonics that are desired for high-speed optical logic gates and chip-scale biochemical sensors.

  19. Temperature and color management of silicon solar cells for building integrated photovoltaic

    Science.gov (United States)

    Amara, Mohamed; Mandorlo, Fabien; Couderc, Romain; Gerenton, Félix; Lemiti, Mustapha

    2018-01-01

    Color management of integrated photovoltaics must meet two criteria of performance: provide maximum conversion efficiency and allow getting the chosen colors with an appropriate brightness, more particularly when using side by side solar cells of different colors. As the cooling conditions are not necessarily optimal, we need to take into account the influence of the heat transfer and temperature. In this article, we focus on the color space and brightness achieved by varying the antireflective properties of flat silicon solar cells. We demonstrate that taking into account the thermal effects allows freely choosing the color and adapting the brightness with a small impact on the conversion efficiency, except for dark blue solar cells. This behavior is especially true when heat exchange by convection is low. Our optical simulations show that the perceived color, for single layer ARC, is not varying with the position of the observer, whatever the chosen color. The use of a double layer ARC adds flexibility to tune the wanted color since the color space is greatly increased in the green and yellow directions. Last, choosing the accurate material allows both bright colors and high conversion efficiency at the same time.

  20. Integrating printed microfluidics with silicon photomultipliers for miniaturised and highly sensitive ATP bioluminescence detection.

    Science.gov (United States)

    Santangelo, M F; Libertino, S; Turner, A P F; Filippini, D; Mak, W C

    2018-01-15

    Bioluminescence has been widely used for important biosensing applications such as the measurement of adenosine triphosphate (ATP), the energy unit in biological systems and an indicator of vital processes. The current technology for detection is mainly based on large equipment such as readers and imaging systems, which require intensive and time-consuming procedures. A miniaturised bioluminescence sensing system, which would allow sensitive and continuous monitoring of ATP, with an integrated and low-cost disposable microfluidic chamber for handling of biological samples, is highly desirable. Here, we report the design, fabrication and testing of 3D printed microfluidics chips coupled with silicon photomultipliers (SiPMs) for high sensitive real-time ATP detection. The 3D microfluidic chip reduces reactant consumption and facilitates solution delivery close to the SiPM to increase the detection efficiency. Our system detects ATP with a limit of detection (LoD) of 8nM and an analytical dynamic range between 15nM and 1µM, showing a stability error of 3%, and a reproducibility error below of 20%. We demonstrate the dynamic monitoring of ATP in a continuous-flow system exhibiting a fast response time, ~4s, and a full recovery to the baseline level within 17s. Moreover, the SiPM-based bioluminescence sensing system shows a similar analytical dynamic range for ATP detection to that of a full-size PerkinElmer laboratory luminescence reader. Copyright © 2017 Elsevier B.V. All rights reserved.

  1. A 12-bit SAR ADC integrated on a multichannel silicon drift detector readout IC

    Science.gov (United States)

    Schembari, F.; Bellotti, G.; Fiorini, C.

    2016-07-01

    A 12-bit analog-to-digital converter (ADC) addressed to Silicon-Drift Detectors (SDDs) multichannel readout ASICs for X- and gamma-ray applications is presented. Aiming at digitizing output multiplexed data from the upstream analog filters banks, the converter must ensure 11-bit accuracy and a sampling frequency of about 5 MS/s. The ADC architecture is the charge-redistribution (CR) successive-approximation register (SAR). A fully differential topology has also been chosen for better rejection of common-mode noise and disturbances. The internal DAC is made of binary-scaled capacitors, whose bottom plates are switched by the SAR logic to perform the binary search of the analog input value by means of the monotonic switching scheme. The A/D converter is integrated on SFERA, a multichannel ASIC fabricated in a standard CMOS 0.35 μm 3.3 V technology and it occupies an area of 0.42 mm2. Simulated static performance shows monotonicity over the whole input-output characteristic. The description of the circuit topology and of inner blocks architectures together with the experimental characterization is here presented.

  2. Joining and Integration of Silicon Nitride Ceramics for Aerospace and Energy Systems

    Science.gov (United States)

    Singh, M.; Asthana, R.

    2009-01-01

    Light-weight, creep-resistant silicon nitride ceramics possess excellent high-temperature strength and are projected to significantly raise engine efficiency and performance when used as turbine components in the next-generation turbo-shaft engines without the extensive cooling that is needed for metallic parts. One key aspect of Si3N4 utilization in such applications is its joining response to diverse materials. In an ongoing research program, the joining and integration of Si3N4 ceramics with metallic, ceramic, and composite materials using braze interlayers with the liquidus temperature in the range 750-1240C is being explored. In this paper, the self-joining behavior of Kyocera Si3N4 and St. Gobain Si3N4 using a ductile Cu-based active braze (Cu-ABA) containing Ti will be presented. Joint microstructure, composition, hardness, and strength as revealed by optical microscopy, scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Knoop microhardness test, and offset compression shear test will be presented. Additionally, microstructure, composition, and joint strength of Si3N4/Inconel 625 joints made using Cu-ABA, will be presented. The results will be discussed with reference to the role of chemical reactions, wetting behavior, and residual stresses in joints.

  3. Wearable, wireless gas sensors using highly stretchable and transparent structures of nanowires and graphene

    Science.gov (United States)

    Park, Jihun; Kim, Joohee; Kim, Kukjoo; Kim, So-Yun; Cheong, Woon Hyung; Park, Kyeongmin; Song, Joo Hyeb; Namgoong, Gyeongho; Kim, Jae Joon; Heo, Jaeyeong; Bien, Franklin; Park, Jang-Ung

    2016-05-01

    Herein, we report the fabrication of a highly stretchable, transparent gas sensor based on silver nanowire-graphene hybrid nanostructures. Due to its superb mechanical and optical characteristics, the fabricated sensor demonstrates outstanding and stable performances even under extreme mechanical deformation (stable until 20% of strain). The integration of a Bluetooth system or an inductive antenna enables the wireless operation of the sensor. In addition, the mechanical robustness of the materials allows the device to be transferred onto various nonplanar substrates, including a watch, a bicycle light, and the leaves of live plants, thereby achieving next-generation sensing electronics for the `Internet of Things' area.Herein, we report the fabrication of a highly stretchable, transparent gas sensor based on silver nanowire-graphene hybrid nanostructures. Due to its superb mechanical and optical characteristics, the fabricated sensor demonstrates outstanding and stable performances even under extreme mechanical deformation (stable until 20% of strain). The integration of a Bluetooth system or an inductive antenna enables the wireless operation of the sensor. In addition, the mechanical robustness of the materials allows the device to be transferred onto various nonplanar substrates, including a watch, a bicycle light, and the leaves of live plants, thereby achieving next-generation sensing electronics for the `Internet of Things' area. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01468b

  4. Integrated circuits of silicon on insulator S.O.I. technologies: State of the art and perspectives

    International Nuclear Information System (INIS)

    Leray, J.L.; Dupont-Nivet, E.; Raffaelli, M.; Coic, Y.M.; Musseau, O.; Pere, J.F.; Lalande, P.; Bredy, J.; Auberton-Herve, A.J.; Bruel, M.; Giffard, B.

    1989-01-01

    Silicon On Insulator technologies have been proposed to increase the integrated circuits performances in radiation operation. Active researches are conducted, in France and abroad. This paper reviews briefly radiation effects phenomenology in that particular type of structure S.O.I. New results are presented that show very good radiation behaviour in term of speed, dose (10 to 100 megarad (Si)), dose rate and S.E.U. performances [fr

  5. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    CERN Document Server

    Alemi, M; Gys, Thierry; Mikulec, B; Piedigrossi, D; Puertolas, D; Rosso, E; Schomaker, R; Snoeys, W; Wyllie, Ken H

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface...

  6. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    International Nuclear Information System (INIS)

    Alemi, M.; Campbell, M.; Gys, T.; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K.

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface

  7. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    Energy Technology Data Exchange (ETDEWEB)

    Alemi, M.; Campbell, M.; Gys, T. E-mail: thierry.gys@cern.ch; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K

    2000-07-11

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface.

  8. Integration of a silicon-based microprobe into a gear measuring instrument for accurate measurement of micro gears

    International Nuclear Information System (INIS)

    Ferreira, N; Krah, T; Jeong, D C; Kniel, K; Härtig, F; Metz, D; Dietzel, A; Büttgenbach, S

    2014-01-01

    The integration of silicon micro probing systems into conventional gear measuring instruments (GMIs) allows fully automated measurements of external involute micro spur gears of normal modules smaller than 1 mm. This system, based on a silicon microprobe, has been developed and manufactured at the Institute for Microtechnology of the Technische Universität Braunschweig. The microprobe consists of a silicon sensor element and a stylus which is oriented perpendicularly to the sensor. The sensor is fabricated by means of silicon bulk micromachining. Its small dimensions of 6.5 mm × 6.5 mm allow compact mounting in a cartridge to facilitate the integration into a GMI. In this way, tactile measurements of 3D microstructures can be realized. To enable three-dimensional measurements with marginal forces, four Wheatstone bridges are built with diffused piezoresistors on the membrane of the sensor. On the reverse of the membrane, the stylus is glued perpendicularly to the sensor on a boss to transmit the probing forces to the sensor element during measurements. Sphere diameters smaller than 300 µm and shaft lengths of 5 mm as well as measurement forces from 10 µN enable the measurements of 3D microstructures. Such micro probing systems can be integrated into universal coordinate measuring machines and also into GMIs to extend their field of application. Practical measurements were carried out at the Physikalisch-Technische Bundesanstalt by qualifying the microprobes on a calibrated reference sphere to determine their sensitivity and their physical dimensions in volume. Following that, profile and helix measurements were carried out on a gear measurement standard with a module of 1 mm. The comparison of the measurements shows good agreement between the measurement values and the calibrated values. This result is a promising basis for the realization of smaller probe diameters for the tactile measurement of micro gears with smaller modules. (paper)

  9. The Language of Glove: Wireless gesture decoder with low-power and stretchable hybrid electronics.

    Science.gov (United States)

    O'Connor, Timothy F; Fach, Matthew E; Miller, Rachel; Root, Samuel E; Mercier, Patrick P; Lipomi, Darren J

    2017-01-01

    This communication describes a glove capable of wirelessly translating the American Sign Language (ASL) alphabet into text displayable on a computer or smartphone. The key components of the device are strain sensors comprising a piezoresistive composite of carbon particles embedded in a fluoroelastomer. These sensors are integrated with a wearable electronic module consisting of digitizers, a microcontroller, and a Bluetooth radio. Finite-element analysis predicts a peak strain on the sensors of 5% when the knuckles are fully bent. Fatigue studies suggest that the sensors successfully detect the articulation of the knuckles even when bent to their maximal degree 1,000 times. In concert with an accelerometer and pressure sensors, the glove is able to translate all 26 letters of the ASL alphabet. Lastly, data taken from the glove are used to control a virtual hand; this application suggests new ways in which stretchable and wearable electronics can enable humans to interface with virtual environments. Critically, this system was constructed of components costing less than $100 and did not require chemical synthesis or access to a cleanroom. It can thus be used as a test bed for materials scientists to evaluate the performance of new materials and flexible and stretchable hybrid electronics.

  10. The Language of Glove: Wireless gesture decoder with low-power and stretchable hybrid electronics.

    Directory of Open Access Journals (Sweden)

    Timothy F O'Connor

    Full Text Available This communication describes a glove capable of wirelessly translating the American Sign Language (ASL alphabet into text displayable on a computer or smartphone. The key components of the device are strain sensors comprising a piezoresistive composite of carbon particles embedded in a fluoroelastomer. These sensors are integrated with a wearable electronic module consisting of digitizers, a microcontroller, and a Bluetooth radio. Finite-element analysis predicts a peak strain on the sensors of 5% when the knuckles are fully bent. Fatigue studies suggest that the sensors successfully detect the articulation of the knuckles even when bent to their maximal degree 1,000 times. In concert with an accelerometer and pressure sensors, the glove is able to translate all 26 letters of the ASL alphabet. Lastly, data taken from the glove are used to control a virtual hand; this application suggests new ways in which stretchable and wearable electronics can enable humans to interface with virtual environments. Critically, this system was constructed of components costing less than $100 and did not require chemical synthesis or access to a cleanroom. It can thus be used as a test bed for materials scientists to evaluate the performance of new materials and flexible and stretchable hybrid electronics.

  11. The Language of Glove: Wireless gesture decoder with low-power and stretchable hybrid electronics

    Science.gov (United States)

    O’Connor, Timothy F.; Fach, Matthew E.; Miller, Rachel; Root, Samuel E.; Mercier, Patrick P.

    2017-01-01

    This communication describes a glove capable of wirelessly translating the American Sign Language (ASL) alphabet into text displayable on a computer or smartphone. The key components of the device are strain sensors comprising a piezoresistive composite of carbon particles embedded in a fluoroelastomer. These sensors are integrated with a wearable electronic module consisting of digitizers, a microcontroller, and a Bluetooth radio. Finite-element analysis predicts a peak strain on the sensors of 5% when the knuckles are fully bent. Fatigue studies suggest that the sensors successfully detect the articulation of the knuckles even when bent to their maximal degree 1,000 times. In concert with an accelerometer and pressure sensors, the glove is able to translate all 26 letters of the ASL alphabet. Lastly, data taken from the glove are used to control a virtual hand; this application suggests new ways in which stretchable and wearable electronics can enable humans to interface with virtual environments. Critically, this system was constructed of components costing less than $100 and did not require chemical synthesis or access to a cleanroom. It can thus be used as a test bed for materials scientists to evaluate the performance of new materials and flexible and stretchable hybrid electronics. PMID:28700603

  12. Integrated silicon grid ion extraction system for O sub 2 processes

    Energy Technology Data Exchange (ETDEWEB)

    Korzec, D.; Engemann, J.; Bansky, J.; Keller, H.M. (University of Wuppertal, Department of Electrical Engineering, 5600 Wuppertal 1, West Germany (DE))

    1990-11-01

    A novel multibeamlet very low energy ion extraction optic technology avoiding cumbersome grid readjustment and thermal degradation of beam properties during a reactive process has been developed. In this approach anisotropically etched silicon grids ((100)-oriented Si wafers) are permanently integrated into a holder made of layered ceramics or micromachined AlN. The performance of such extraction systems having 300, 600, and 900 {mu}m grid separation was tested in a 3 cm capacitively coupled rf-ion source. Stable system operation with use of oxygen has been achieved for an extended period of time ({gt}100 h) for a total extraction voltage of 140 V which represents the maximum voltage to be applied for a grid separation of 0.3 mm. Additionally detailed Faraday-cup measurements of the extracted ion beam have been carried out for a total voltage range of 0--600 V, a vacuum chamber pressure of 1{times}10{sup {minus}4}--1{times}10{sup {minus}3} mbar, rf-power levels of 10--170 W, a net-to-total voltage ratio of 0.5--1.0 and an axial magnetic field of up to 22 mT. For O{sub 2} an ion current density of 1.3 mA/cm{sup 2} could be extracted with ions having a mean energy of 60 eV. Even for energies as low as 50-eV current densities of 0.8 mA/cm{sup 2} could be achieved. In combination with the filamentless capacitively coupled rf source used, this approach has promise in various fields of materials research and processing such as ion beam assisted deposition of high-{ital T}{sub {ital c}} YBaCuO layers and etching/modification of diamondlike, diamond and polymer thin films.

  13. Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing.

    Science.gov (United States)

    Xiong, Chi; Pernice, Wolfram H P; Tang, Hong X

    2012-07-11

    Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for optical signal processing and on-chip optical networks. However, silicon is limited to wavelengths above 1.1 μm and does not provide the desired lowest order optical nonlinearity for active signal processing. Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible sputtered thin films we fabricate AlN-on-insulator waveguides that exhibit low propagation loss (0.6 dB/cm). Exploiting AlN's inherent Pockels effect we demonstrate electro-optic modulation up to 4.5 Gb/s with very low energy consumption (down to 10 fJ/bit). The ultrawide transparency window of AlN devices also enables high speed modulation at visible wavelengths. Our low cost, wideband, carrier-free photonic circuits hold promise for ultralow power and high-speed signal processing at the microprocessor chip level.

  14. Graphene-based stretchable and transparent moisture barrier

    Science.gov (United States)

    Won, Sejeong; Van Lam, Do; Lee, Jin Young; Jung, Hyun-June; Hur, Min; Kim, Kwang-Seop; Lee, Hak-Joo; Kim, Jae-Hyun

    2018-03-01

    We propose an alumina-deposited double-layer graphene (2LG) as a transparent, scalable, and stretchable barrier against moisture; this barrier is indispensable for foldable or stretchable organic displays and electronics. Both the barrier property and stretchability were significantly enhanced through the introduction of 2LG between alumina and a polymeric substrate. 2LG with negligible polymeric residues was coated on the polymeric substrate via a scalable dry transfer method in a roll-to-roll manner; an alumina layer was deposited on the graphene via atomic layer deposition. The effect of the graphene layer on crack generation in the alumina layer was systematically studied under external strain using an in situ micro-tensile tester, and correlations between the deformation-induced defects and water vapor transmission rate were quantitatively analyzed. The enhanced stretchability of alumina-deposited 2LG originated from the interlayer sliding between the graphene layers, which resulted in the crack density of the alumina layer being reduced under external strain.

  15. Stretchable transistors with buckled carbon nanotube films as conducting channels

    Science.gov (United States)

    Arnold, Michael S; Xu, Feng

    2015-03-24

    Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

  16. A washable, stretchable, and self-powered human-machine interfacing Triboelectric nanogenerator for wireless communications and soft robotics pressure sensor arrays

    KAUST Repository

    Ahmed, Abdelsalam

    2017-01-20

    Flexible and stretchable human-machine Interfacing devices have attracted great attention due to the need for portable, ergonomic, and geometrically compatible devices in the new era of computer technology. Triboelectric nanogenerators (TENG) have shown promising potential for self-powered human–machine interacting devices. In this paper, a flexible, stretchable and self-powered keyboard is developed based on vertical contact-separation mode TENG. The keyboard is fabricated using urethane, silicone rubbers and Carbon Nanotubes (CNTs) electrodes. The structure shows a highly flexible, stretchable, and mechanically durable behavior, which can be conformal on different surfaces. The keyboard is capable of converting mechanical energy of finger tapping to electrical energy based on contact electrification, which can eliminate the need of external power source. The device can be utilized for wireless communication with computers owing to the self-powering mechanism. The keyboards also demonstrate consistent behavior in generating voltage signals regardless of touching objects’ materials and environmental effects like humidity. In addition, the proposed system can be used for keystroke dynamic-based authentication. Therefore, highly secured accessibility to the computers can be achieved owing to the keyboard’s high sensitivity and accurate selectivity of different users.

  17. Clinical trial of an experimental cleaning solution: antibiofilm effect and integrity of a silicone-based denture liner.

    Science.gov (United States)

    Segundo, Antonio de Luna Malheiros; Pisani, Marina Xavier; Nascimento, Céssio do; Souza, Raphael Freitas; Paranhos, Helena de Freitas Oliveira; Silva-Lovato, Cléudia Helena

    2014-09-01

    This study evaluated the antibiofilm effect of an experimental solution of 2% Ricinus communis (R. communis) on a silicone-based denture liner by means of a randomized clinical trial, as well as the integrity of such liner following a cleansing regimen with such solution. About 30 complete denture wearers had their lower dentures relined with a silicone-based denture liner and randomly allocated to cleanse their dentures by means of: (A) a specific toothbrush for complete dentures and dentifrice; (B) soaking in an experimental 2% R. communis solution; and (C) association of A and B. Considered outcomes were biofilm coverage area (%), microbial counts by means of the deoxy-ribonucleic acid (DNA) checkerboard hybridization technique and physical integrity of the soft liner, assessed during a time interval of 60 days. Mean group values were compared by analysis of variance (ANOVA) and Tukey tests or generalized linear method (α = 0.05). The mechanical method presented the lowest biofilm percentage (1.45 ± 1.03) if compared to the chemical method (2.96 ± 1.98) and the associated one (2.71 ± 1.76). After 60 days (3.37 ± 2.04), biofilm accumulation was higher than at 15 days (1.28 ± 0.77) and 30 days (2.46 ± 1.54). The denture liner was less deteriorated and kept its physical integrity when the mechanical method was applied. The chemical method presented higher effectiveness against microorganisms, including some Candida species. The 2% R. communis solution presented stronger antimicrobial capacity than brushing on a silicone-based denture liner after immersion. However, it was not superior to the mechanical method in preserving the physical integrity of the material and in biofilm removal. Soft denture liners hygiene is a very important issue and not conclusive in the literature. The experimental solution of 2% R. communis evaluated presented promising antimicrobial potential and should be more explored to be recommended as cleanser.

  18. Echelle grating for silicon photonics applications: integration of electron beam lithography in the process flow and first results

    Science.gov (United States)

    Kaschel, Mathias; Letzkus, Florian; Butschke, Jörg; Skwierawski, Piotr; Schneider, Marc; Weber, Marc

    2016-05-01

    We present the technology steps to integrate an Echelle grating in the process flow of silicon-organic hybrid (SOH) modulators or related active devices. The CMOS-compatible process flow on SOI substrates uses a mix of optical i-line lithography and electron beam lithography (EBL). High speed optical data communication depends on wavelength divisions multiplexing and de-multiplexing devices like Echelle gratings. The minimum feature sizes vary from device to device and reach down to 60 nm inside a modulator, while the total area of a single Echelle grating is up to several mm2 of unprocessed silicon. Resist patterning using a variable shape beam electron beam pattern generator allows high resolution. An oxide hard mask is deposited, patterns are structured threefold by EBL and are later transferred to the silicon. We demonstrate a 9-channel multiplexer featuring a 2 dB on-chip loss and an adjacent channel crosstalk better than -22 dB. Additionally a 45-channel Echelle multiplexer is presented with 5 dB on chip loss and a channel crosstalk better than -12 dB. The devices cover an on-chip area of only 0.08 mm2 and 0.5 mm2 with a wavelength spacing of 10.5 nm and 2.0 nm, respectively.

  19. Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hossain, Nadir; Sweeney, Stephen [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Hosea, Jeff [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK and Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia); Liebich, Sven; Zimprich, Martin; Volz, Kerstin; Stolz, Wolfgang [Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg (Germany); Kunert, Bernerdette [NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)

    2013-12-04

    We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates.

  20. Performance of integrated retainer rings in silicon micro-turbines with thrust style micro-ball bearings

    International Nuclear Information System (INIS)

    Hergert, Robert J; Holmes, Andrew S; Hanrahan, Brendan; Ghodssi, Reza

    2013-01-01

    This work explores the performance of different silicon retainer ring designs when integrated into silicon micro-turbines (SMTs) incorporating thrust style bearings supported on 500 µm diameter steel balls. Experimental performance curves are presented for SMTs with rotor diameters of 5 mm and 10 mm, each with five different retainer designs varying in mechanical rigidity, ball pocket shape and ball complement. It was found that the different retainer designs yielded different performance curves, with the closed pocket designs consistently requiring lower input power for a given rotation speed, and the most rigid retainers giving the best performance overall. Both 5 mm and 10 mm diameter devices have shown repeatable performance at rotation speeds up to and exceeding 20 000 RPM with input power levels below 2 W, and devices were tested for over 2.5 million revolutions without failure. Retainer rings are commonly used in macro-scale bearings to ensure uniform spacing between the rolling elements. The integration of retainers into micro-bearings could lower costs by reducing the number of balls required for stable operation, and also open up the possibility of ‘smart’ bearings with integrated sensors to monitor the bearing status. (paper)

  1. Spirally Structured Conductive Composites for Highly Stretchable, Robust Conductors and Sensors.

    Science.gov (United States)

    Wu, Xiaodong; Han, Yangyang; Zhang, Xinxing; Lu, Canhui

    2017-07-12

    Flexible and stretchable electronics are highly desirable for next generation devices. However, stretchability and conductivity are fundamentally difficult to combine for conventional conductive composites, which restricts their widespread applications especially as stretchable electronics. Here, we innovatively develop a new class of highly stretchable and robust conductive composites via a simple and scalable structural approach. Briefly, carbon nanotubes are spray-coated onto a self-adhesive rubber film, followed by rolling up the film completely to create a spirally layered structure within the composites. This unique spirally layered structure breaks the typical trade-off between stretchability and conductivity of traditional conductive composites and, more importantly, restrains the generation and propagation of mechanical microcracks in the conductive layer under strain. Benefiting from such structure-induced advantages, the spirally layered composites exhibit high stretchability and flexibility, good conductive stability, and excellent robustness, enabling the composites to serve as highly stretchable conductors (up to 300% strain), versatile sensors for monitoring both subtle and large human activities, and functional threads for wearable electronics. This novel and efficient methodology provides a new design philosophy for manufacturing not only stretchable conductors and sensors but also other stretchable electronics, such as transistors, generators, artificial muscles, etc.

  2. Micromachined silicon cantilevers with integrated high-frequency magnetoimpedance sensors for simultaneous strain and magnetic field detection

    Science.gov (United States)

    Buettel, G.; Joppich, J.; Hartmann, U.

    2017-12-01

    Giant magnetoimpedance (GMI) measurements in the high-frequency regime utilizing a coplanar waveguide with an integrated Permalloy multilayer and micromachined on a silicon cantilever are reported. The fabrication process is described in detail. The aspect ratio of the magnetic multilayer in the magnetoresistive and magnetostrictive device was varied. Tensile strain and compressive strain were applied. Vector network analyzer measurements in the range from the skin effect to ferromagnetic resonance confirm the technological potential of GMI-based micro-electro-mechanical devices for strain and magnetic field sensing applications. The strain-impedance gauge factor was quantified by finite element strain calculations and reaches a maximum value of almost 200.

  3. Fabrication of a microstrip patch antenna integrated in low-resistance silicon wafer using a BCB dielectric

    Science.gov (United States)

    Tianxi, Wang; Mei, Han; Gaowei, Xu; Le, Luo

    2013-10-01

    This paper demonstrates a technique for microstrip patch antenna fabrication using a benzocyclobutene (BCB) dielectric. The most distinctive feature of this method is that the antenna is integrated on a low-resistance silicon wafer, and is fully compatible with the microwave multi-chip module packaging process. Low-permittivity dielectric BCB with excellent thermal and mechanical stability is employed to enhance the performance of the antenna. The as-fabricated antenna is characterized, and the experimental results show that the antenna resonates at 14.9 GHz with a 1.67% impedance bandwidth.

  4. Development and characterisation of silicon photomultipliers with bulk-integrated quench resistors for future applications in particle and astroparticle physics

    International Nuclear Information System (INIS)

    Jendrysik, Christian

    2014-01-01

    This thesis deals with the development and characterisation of a novel silicon photomultiplier concept with bulk-integrated quench resistors. The approach allows the realisation of a free entrance window and high fill factors, which leads to an improvement of the detection efficiency. With first prototype productions a proof of concept was possible. A full characterisation provided promising results, in particular with respect to the photon detection efficiency. By customising the simulation tools, a reliable description of the devices was achieved. In addition, conceptual studies of the next device generation demonstrated the possibility of single cell readout, expanding the application range of those detectors to particle tracking.

  5. Towards Cost-Effective Crystalline Silicon Based Flexible Solar Cells: Integration Strategy by Rational Design of Materials, Process, and Devices

    KAUST Repository

    Bahabry, Rabab R.

    2017-11-30

    The solar cells market has an annual growth of more than 30 percent over the past 15 years. At the same time, the cost of the solar modules diminished to meet both of the rapid global demand and the technological improvements. In particular for the crystalline silicon solar cells, the workhorse of this technology. The objective of this doctoral thesis is enhancing the efficiency of c-Si solar cells while exploring the cost reduction via innovative techniques. Contact metallization and ultra-flexible wafer based c-Si solar cells are the main areas under investigation. First, Silicon-based solar cells typically utilize screen printed Silver (Ag) metal contacts which affect the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used for the front contact grid lines. In this work, investigation of the microstructure and the electrical characteristics of nickel monosilicide (NiSi) ohmic contacts on the rear side of c-Si solar cells has been carried out. Significant enhancement in the fill factor leading to increasing the total power conversion efficiency is observed. Second, advanced classes of modern application require a new generation of versatile solar cells showcasing extreme mechanical resilience. However, silicon is a brittle material with a fracture strains <1%. Highly flexible Si-based solar cells are available in the form thin films which seem to be disadvantageous over thick Si solar cells due to the reduction of the optical absorption with less active Si material. Here, a complementary metal oxide semiconductor (CMOS) technology based integration strategy is designed where corrugation architecture to enable an ultra-flexible solar cell module from bulk mono-crystalline silicon solar wafer with 17% efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness and achieves flexibility via interdigitated back contacts. These cells

  6. The Piezojunction Effect in Silicon. Consequences and Applications for Integrated Circuits and Sensors

    NARCIS (Netherlands)

    Fruett, F.

    2001-01-01

    This thesis describes an investigation of the piezojunction effect in silicon. The aim of this investigation is twofold. First, to propose some techniques to reduce the mechanical-stress-induced inaccuracy and long-term instability of many analogue circuits such as bandgap references and monolithic

  7. Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

    NARCIS (Netherlands)

    Hussein, M.G.; Worhoff, Kerstin; Sengo, G.; Sengo, G.; Driessen, A.

    2007-01-01

    Silicon oxynitride $(SiO_{x}N_{y}:H)$ layers were grown from 2% $SiH_{4}/N_{2}$ and $N_{2}O$ gas mixtures by plasma-enhanced chemical vapor deposition (PECVD). Layer properties such as refractive index, deposition rate, thickness non-uniformity and hydrogen bond content were correlated to the

  8. Monolithic integration of detectors and transistors on high-resistivity silicon

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Batignani, Giovanni; Boscardin, Maurizio; Bosisio, Luciano; Gregori, Paolo; Pancheri, Lucio; Piemonte, Claudio; Ratti, Lodovico; Verzellesi, Giovanni; Zorzi, Nicola

    2007-01-01

    We report on the most recent results from an R and D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed

  9. All-optical Integrated Switches Based on Azo-benzene Liquid Crystals on Silicon

    Science.gov (United States)

    2011-11-01

    Conclusions References List of Figures and Tables Fig. 1: Tridimensional schematic of the LCW and a representation of the molecular...controlled Silicon V-groove: methods, assumptions and procedures Fig. 1: Tridimensional schematic of the LCW and a representation of molecular

  10. Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

    1999-01-01

    Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

  11. Comparison of compression properties of stretchable knitted fabrics and bi-stretch woven fabrics for compression garments

    NARCIS (Netherlands)

    Maqsood, Muhammad

    2017-01-01

    Stretchable fabrics have diverse applications ranging from casual apparel to performance sportswear and compression therapy. Compression therapy is the universally accepted treatment for the management of hypertrophic scarring after severe burns. Mostly stretchable knitted fabrics are used in

  12. Chemiluminescence lateral flow immunoassay cartridge with integrated amorphous silicon photosensors array for human serum albumin detection in urine samples.

    Science.gov (United States)

    Zangheri, Martina; Di Nardo, Fabio; Mirasoli, Mara; Anfossi, Laura; Nascetti, Augusto; Caputo, Domenico; De Cesare, Giampiero; Guardigli, Massimo; Baggiani, Claudio; Roda, Aldo

    2016-12-01

    A novel and disposable cartridge for chemiluminescent (CL)-lateral flow immunoassay (LFIA) with integrated amorphous silicon (a-Si:H) photosensors array was developed and applied to quantitatively detect human serum albumin (HSA) in urine samples. The presented analytical method is based on an indirect competitive immunoassay using horseradish peroxidase (HRP) as a tracer, which is detected by adding the luminol/enhancer/hydrogen peroxide CL cocktail. The system comprises an array of a-Si:H photosensors deposited on a glass substrate, on which a PDMS cartridge that houses the LFIA strip and the reagents necessary for the CL immunoassay was optically coupled to obtain an integrated analytical device controlled by a portable read-out electronics. The method is simple and fast with a detection limit of 2.5 mg L -1 for HSA in urine and a dynamic range up to 850 mg L -1 , which is suitable for measuring physiological levels of HSA in urine samples and their variation in different diseases (micro- and macroalbuminuria). The use of CL detection allowed accurate and objective analyte quantification in a dynamic range that extends from femtomoles to picomoles. The analytical performances of this integrated device were found to be comparable with those obtained using a charge-coupled device (CCD) as a reference off-chip detector. These results demonstrate that integrating the a-Si:H photosensors array with CL-LFIA technique provides compact, sensitive and low-cost systems for CL-based bioassays with a wide range of applications for in-field and point-of-care bioanalyses. Graphical Abstract A novel integrated portable device was developed for direct quantitative detection of human serum albumin (HSA) in urine samples, exploiting a chemiluminescence lateral flow immunoassay (LFIA). The device comprises a cartridge that holds the LFIA strip and all the reagents necessary for the analysis, an array of amorphous silicon photosensors, and a custom read-out electronics.

  13. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    Science.gov (United States)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  14. Electrochemically synthesized stretchable polypyrrole/fabric electrodes for supercapacitor

    International Nuclear Information System (INIS)

    Yue, Binbin; Wang, Caiyun; Ding, Xin; Wallace, Gordon G.

    2013-01-01

    Wearable electronics offer the combined advantages of both electronics and fabrics. Being an indispensable part of these electronics, lightweight, stretchable and wearable power sources are strongly demanded. Here we describe a daily-used cotton fabric coated with polypyrrole as electrode for stretchable supercapacitors. Polypyrrole was synthesized on the Au coated fabric via an electrochemical polymerization process with p-toluenesulfonic acid (p-TS) as dopant from acetonitrile solution. This material was characterized with FESEM, tensile stress, and studied as a supercapacitor electrode in 1.0 M NaCl. This conductive textile electrode can sustain up to 140% strain without electric failure. It delivers a high specific capacitance of 254.9 F g −1 at a scan rate of 10 mV s −1 , and keeps almost unchanged at an applied strain (i.e. 30% and 50%) but with an improved cycling stability

  15. Ultrasensitive, Stretchable Strain Sensors Based on Fragmented Carbon Nanotube Papers

    KAUST Repository

    Zhou, Jian

    2017-01-17

    The development of strain sensors featuring both ultra high sensitivity and high stretchability is still a challenge. We demonstrate that strain sensors based on fragmented single-walled carbon nanotube (SWCNT) paper embedded in poly(dimethylsiloxane) (PDMS) can sustain their sensitivity even at very high strain levels (with a gauge factor of over 10(7) at 50% strain). This record sensitivity is ascribed to the low initial electrical resistance (5-28 Omega) of the SWCNT paper and the wide change in resistance (up to 10(6) Omega) governed by the percolated network of SWCNT in the cracked region. The sensor response remains nearly unchanged after 10 000 strain cycles at 20% proving the robustness of this technology. This fragmentation based sensing system brings opportunities to engineer highly sensitive stretchable sensors.

  16. Stretchable biofuel cell with enzyme-modified conductive textiles.

    Science.gov (United States)

    Ogawa, Yudai; Takai, Yuki; Kato, Yuto; Kai, Hiroyuki; Miyake, Takeo; Nishizawa, Matsuhiko

    2015-12-15

    A sheet-type, stretchable biofuel cell was developed by laminating three components: a bioanode textile for fructose oxidation, a hydrogel sheet containing fructose as fuel, and a gas-diffusion biocathode textile for oxygen reduction. The anode and cathode textiles were prepared by modifying carbon nanotube (CNT)-decorated stretchable textiles with fructose dehydrogenase (FDH) and bilirubin oxidase (BOD), respectively. Enzymatic reaction currents of anode and cathode textiles were stable for 30 cycles of 50% stretching, with initial loss of 20-30% in the first few cycles due to the partial breaking of the CNT network at the junction of textile fibers. The assembled laminate biofuel cell showed power of ~0.2 mW/cm(2) with 1.2 kΩ load, which was stable even at stretched, twisted, and wrapped forms. Copyright © 2015 Elsevier B.V. All rights reserved.

  17. Mechanical response of spiral interconnect arrays for highly stretchable electronics

    KAUST Repository

    Qaiser, Nadeem

    2017-11-21

    A spiral interconnect array is a commonly used architecture for stretchable electronics, which accommodates large deformations during stretching. Here, we show the effect of different geometrical morphologies on the deformation behavior of the spiral island network. We use numerical modeling to calculate the stresses and strains in the spiral interconnects under the prescribed displacement of 1000 μm. Our result shows that spiral arm elongation depends on the angular position of that particular spiral in the array. We also introduce the concept of a unit-cell, which fairly replicates the deformation mechanism for full complex hexagon, diamond, and square shaped arrays. The spiral interconnects which are axially connected between displaced and fixed islands attain higher stretchability and thus experience the maximum deformations. We perform tensile testing of 3D printed replica and find that experimental observations corroborate with theoretical study.

  18. Chemical surface modifications for the development of silicon-based label-free integrated optical (IO) biosensors: a review.

    Science.gov (United States)

    Bañuls, María-José; Puchades, Rosa; Maquieira, Ángel

    2013-05-13

    Increasing interest has been paid to label-free biosensors in recent years. Among them, refractive index (RI) optical biosensors enable high density and the chip-scale integration of optical components. This makes them more appealing to help develop lab-on-a-chip devices. Today, many RI integrated optical (IO) devices are made using silicon-based materials. A key issue in their development is the biofunctionalization of sensing surfaces because they provide a specific, sensitive response to the analyte of interest. This review critically discusses the biofunctionalization procedures, assay formats and characterization techniques employed in setting up IO biosensors. In addition, it provides the most relevant results obtained from using these devices for real sample biosensing. Finally, an overview of the most promising future developments in the fields of chemical surface modification and capture agent attachment for IO biosensors follows. Copyright © 2013 Elsevier B.V. All rights reserved.

  19. Stretchable Electronic Platform for Soft and Smart Contact Lens Applications

    OpenAIRE

    Vasquez Quintero, Andrés Felipe; Verplancke, Rik; De Smet, Herbert; Vanfleteren, Jan

    2017-01-01

    A stretchable platform with spherical-shaped electronics based on thermo- plastic polyurethane (TPU) is introduced for soft smart contact lenses. The low glass transition temperature of TPU, its relatively low hardness, and its proven biocompatibility (i.e., protection of exterior body wounds) fulfill the essential requirements for eye wearable devices. These requirements include optical transparency, conformal fitting, and flexibility comparable with soft contact lense...

  20. Stretchable Helical Architecture Inorganic-Organic Hetero Thermoelectric Generator

    KAUST Repository

    Rojas, Jhonathan Prieto

    2016-10-26

    To achieve higher power output from a thermoelectric generator (TEG), one needs to maintain a larger temperature difference between hot and cold end. In that regard, a stretchable TEG can be interesting to adaptively control the temperature difference. Here we show, the development of simple yet versatile and highly stretchable thermoelectric generators (TEGs), by combining well-known inorganic thermoelectric materials Bismuth Telluride and Antimony Telluride (Bi2Te3 and Sb2Te3) with organic substrates (Off-Stoichiometry Thiol-Enes polymer platform – OSTE, polyimide or paper) and novel helical architecture (double-arm spirals) to achieve over 100% stretchability. First, an OSTE-based TEG design demonstrates higher open circuit voltage generation at 100% strain than at rest, although it exhibits high internal resistance and a relatively complex fabrication process. The second, simpler TEG design, achieves a significant resistance reduction and two different structural substrates (PI and paper) are compared. The paper-based TEG generates 17 nW (ΔT = 75 °C) at 60% strain, which represents more than twice the power generation while at rest (zero strain). On the other hand, polyimide produces more conductive TE films and higher power (~35 nW at ΔT = 75 °C) but due to its higher thermal conductivity, power does not increase at stretch. In conclusion, highly stretchable TEGs can lead to higher temperature gradients (thus higher power generation), given that thermal conductivity of the structural material is low enough. Furthermore, either horizontal or vertical displacement can be achieved with double-arm helical architecture, hence allowing to extend the device to any nearby and mobile heat sink for continuous, effectively higher power generation.

  1. Integrating a dual-silicon photoelectrochemical cell into a redox flow battery for unassisted photocharging

    DEFF Research Database (Denmark)

    Liao, Shichao; Zong, Xu; Seger, Brian

    2016-01-01

    Solar rechargeable flow cells (SRFCs) provide an attractive approach for in situ capture and storage of intermittent solar energy via photoelectrochemical regeneration of discharged redox species for electricity generation. However, overall SFRC performance is restricted by inefficient photoelect......Solar rechargeable flow cells (SRFCs) provide an attractive approach for in situ capture and storage of intermittent solar energy via photoelectrochemical regeneration of discharged redox species for electricity generation. However, overall SFRC performance is restricted by inefficient...... photoelectrochemical reactions. Here we report an efficient SRFC based on a dual-silicon photoelectrochemical cell and a quinone/bromine redox flow battery for in situ solar energy conversion and storage. Using narrow bandgap silicon for efficient photon collection and fast redox couples for rapid interface charge...

  2. Extraordinarily Stretchable All-Carbon Collaborative Nanoarchitectures for Epidermal Sensors

    KAUST Repository

    Cai, Yichen

    2017-06-16

    Multifunctional microelectronic components featuring large stretchability, high sensitivity, high signal-to-noise ratio (SNR), and broad sensing range have attracted a huge surge of interest with the fast developing epidermal electronic systems. Here, the epidermal sensors based on all-carbon collaborative percolation network are demonstrated, which consist 3D graphene foam and carbon nanotubes (CNTs) obtained by two-step chemical vapor deposition processes. The nanoscaled CNT networks largely enhance the stretchability and SNR of the 3D microarchitectural graphene foams, endowing the strain sensor with a gauge factor as high as 35, a wide reliable sensing range up to 85%, and excellent cyclic stability (>5000 cycles). The flexible and reversible strain sensor can be easily mounted on human skin as a wearable electronic device for real-time and high accuracy detecting of electrophysiological stimuli and even for acoustic vibration recognition. The rationally designed all-carbon nanoarchitectures are scalable, low cost, and promising in practical applications requiring extraordinary stretchability and ultrahigh SNRs.

  3. A Fabrication Method for Highly Stretchable Conductors with Silver Nanowires

    Science.gov (United States)

    Chang, Chia-Wei; Chen, Shih-Pin; Liao, Ying-Chih

    2016-01-01

    Stretchable electronics are identified as a key technology for electronic applications in the next generation. One of the challenges in fabrication of stretchable electronic devices is the preparation of stretchable conductors with great mechanical stability. In this study, we developed a simple fabrication method to chemically solder the contact points between silver nanowire (AgNW) networks. AgNW nanomesh was first deposited on a glass slide via spray coating method. A reactive ink composed of silver nanoparticle (AgNPs) precursors was applied over the spray coated AgNW thin films. After heating for 40 min, AgNPs were preferentially generated over the nanowire junctions to solder the AgNW nanomesh, and reinforced the conducting network. The chemically modified AgNW thin film was then transferred to polyurethane (PU) substrates by casting method. The soldered AgNW thin films on PU exhibited no obvious change in electrical conductivity under stretching or rolling process with elongation strains up to 120%. PMID:26862843

  4. A Stretchable Electromagnetic Absorber Fabricated Using Screen Printing Technology.

    Science.gov (United States)

    Jeong, Heijun; Lim, Sungjoon

    2017-05-21

    A stretchable electromagnetic absorber fabricated using screen printing technology is proposed in this paper. We used a polydimethylsiloxane (PDMS) substrate to fabricate the stretchable absorber since PDMS exhibits good dielectric properties, flexibility, and restoring capabilities. DuPont PE872 (DuPont, Wilmington, CT, USA), a stretchable silver conductive ink, was used for the screen printing technique. The reflection coefficient of the absorber was measured using a vector network analyzer and a waveguide. The proposed absorber was designed as a rectangular patch unit cell, wherein the top of the unit cell acted as the patch and the bottom formed the ground. The size of the patch was 8 mm × 7 mm. The prototype of the absorber consisted of two unit cells such that it fits into the WR-90 waveguide (dimensions: 22.86 mm × 10.16 mm) for experimental measurement. Before stretching the absorber, the resonant frequency was 11 GHz. When stretched along the x -direction, the resonant frequency shifted by 0.1 GHz, from 11 to 10.9 GHz, demonstrating 99% absorption. Furthermore, when stretched along the y -direction, the resonant frequency shifted by 0.6 GHz, from 11 to 10.4 GHz, demonstrating 99% absorption.

  5. Design of Elastomer Structure to Facilitate Incorporation of Expanded Graphite in Silicones Without Compromising Electromechanical Integrity

    DEFF Research Database (Denmark)

    Hassouneh, Suzan Sager; Daugaard, Anders Egede; Skov, Anne Ladegaard

    2015-01-01

    The development of elastomer materials with a high dielectric permittivity has attracted increased interest over the past years due to their use in, for example, dielectric elastomers. For this particular use, both the electrically insulating properties - as well as the mechanical properties......-functional crosslinker, which allows for development of a suitable network matrix. The dielectric permittivity was increased by almost a factor of 4 compared to a benchmark silicone elastomer....

  6. A Physically Transient Form of Silicon Electronics, With Integrated Sensors, Actuators and Power Supply

    Science.gov (United States)

    Hwang, Suk-Won; Tao, Hu; Kim, Dae-Hyeong; Cheng, Huanyu; Song, Jun-Kyul; Rill, Elliott; Brenckle, Mark A.; Panilaitis, Bruce; Won, Sang Min; Kim, Yun-Soung; Yu, Ki Jun; Ameen, Abid; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L.; Zakin, Mitchell R.; Slepian, Marvin J.; Huang, Yonggang; Omenetto, Fiorenzo G.; Rogers, John A.

    2013-01-01

    A remarkable feature of modern silicon electronics is its ability to remain functionally and physically invariant, almost indefinitely for many practical purposes. Here, we introduce a silicon-based technology that offers the opposite behavior: it gradually vanishes over time, in a well-controlled, programmed manner. Devices that are ‘transient’ in this sense create application possibilities that cannot be addressed with conventional electronics, such as active implants that exist for medically useful timeframes, but then completely dissolve and disappear via resorption by the body. We report a comprehensive set of materials, manufacturing schemes, device components and theoretical design tools for a complementary metal oxide semiconductor (CMOS) electronics of this type, together with four different classes of sensors and actuators in addressable arrays, two options for power supply and a wireless control strategy. A transient silicon device capable of delivering thermal therapy in an implantable mode and its demonstration in animal models illustrate a system-level example of this technology. PMID:23019646

  7. Micro-fabricated silicon devices for advanced thermal management and integration of particle tracking detectors

    CERN Document Server

    Romagnoli, Giulia; Gambaro, Carla

    Since their first studies targeting the cooling of high-power computing chips, micro-channel devices are proven to provide a very efficient cooling system. In the last years micro-channel cooling has been successfully applied to the cooling of particle detectors at CERN. Thanks to their high thermal efficiency, they can guarantee a good heat sink for the cooling of silicon trackers, fundamental for the reduction of the radiation damage caused by the beam interactions. The radiation damage on the silicon detector is increasing with temperature and furthermore the detectors are producing heat that should be dissipated in the supporting structure. Micro-channels guarantee a distributed and uniform thermal exchange, thanks to the high flexibility of the micro-fabrication process that allows a large variety of channel designs. The thin nature of the micro-channels etched inside silicon wafers, is fulfilling the physics requirement of minimization of the material crossed by the particle beam. Furthermore micro-chan...

  8. A sewing-enabled stitch-and-transfer method for robust, ultra-stretchable, conductive interconnects

    Science.gov (United States)

    Rahimi, Rahim; Ochoa, Manuel; Yu, Wuyang; Ziaie, Babak

    2014-09-01

    Fabricating highly stretchable and robust electrical interconnects at low-cost remains an unmet challenge in stretchable electronics. Previously reported stretchable interconnects require complicated fabrication processes with resulting devices exhibiting limited stretchability, poor reliability, and large gauge factors. Here, we demonstrate a novel sew-and-transfer method for rapid fabrication of low-cost, highly stretchable interconnects. Using a commercial sewing machine and double-thread stitch with one of the threads being water soluble polyvinyl alcohol (PVA), thin zigzag-pattern metallic wires are sewn into a polymeric film and are subsequently transferred onto a stretchable elastomeric substrate by dissolving PVA in warm water. The resulting structures exhibit extreme stretchability (exceeding 500% strain for a zigzag angle of 18 °) and robustness (capable of withstanding repeated stretch-and-release cycles of 15000 at 110% strain, 50000 at 55% strain, and  > 120000 at 30% strain without any noticeable change in resistance even at maximum strain levels). Using this technique, we demonstrate a stretchable inductive strain sensor for monitoring balloon expansion in a Foley urinary catheter capable of detecting the balloon diameter change from 9 mm to 38 mm with an average sensitivity of 4 nH/mm.

  9. Highly stretchable and transparent metal nanowire heater for wearable electronics applications.

    Science.gov (United States)

    Hong, Sukjoon; Lee, Habeom; Lee, Jinhwan; Kwon, Jinhyeong; Han, Seungyong; Suh, Young D; Cho, Hyunmin; Shin, Jaeho; Yeo, Junyeob; Ko, Seung Hwan

    2015-08-26

    A highly stretchable and transparent electrical heater is demonstrated by constructing a partially embedded silver nanowire percolative network on an elastic substrate. The stretchable network heater is applied on human wrists under real-time strain, bending, and twisting, and has potential for lightweight, biocompatible, and versatile wearable applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Stretchable Ag electrodes with mechanically tunable optical transmittance on wavy-patterned PDMS substrates

    Science.gov (United States)

    Ko, Eun-Hye; Kim, Hyo-Joong; Lee, Sang-Mok; Kim, Tae-Woong; Kim, Han-Ki

    2017-04-01

    We report on semi-transparent stretchable Ag films coated on a wavy-patterned polydimethylsiloxane (PDMS) substrate for use as stretchable electrodes for stretchable and transparent electronics. To improve the mechanical stretchability of the Ag films, we optimized the wavy-pattern of the PDMS substrate as a function of UV-ozone treatment time and pre-strain of the PDMS substrate. In addition, we investigated the effect of the Ag thickness on the mechanical stretchability of the Ag electrode formed on the wavy-patterned PDMS substrate. The semi-transparent Ag films formed on the wavy-patterned PDMS substrate showed better stretchability (strain 20%) than the Ag films formed on a flat PDMS substrate because the wavy pattern effectively relieved strain. In addition, the optical transmittance of the Ag electrode on the wavy-patterned PDMS substrate was tunable based on the degree of stretching for the PDMS substrate. In particular, it was found that the wavy-patterned PDMS with a smooth buckling was beneficial for a precise patterning of Ag interconnectors. Furthermore, we demonstrated the feasibility of semi-transparent Ag films on wavy-patterned PDMS as stretchable electrodes for the stretchable electronics based on bending tests, hysteresis tests, and dynamic fatigue tests.

  11. Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-02-01

    A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.

  12. Dielectric elastomer for stretchable sensors: influence of the design and material properties

    Science.gov (United States)

    Jean-Mistral, C.; Iglesias, S.; Pruvost, S.; Duchet-Rumeau, J.; Chesné, S.

    2016-04-01

    Dielectric elastomers exhibit extended capabilities as flexible sensors for the detection of load distributions, pressure or huge deformations. Tracking the human movements of the fingers or the arms could be useful for the reconstruction of sporting gesture, or to control a human-like robot. Proposing new measurements methods are addressed in a number of publications leading to improving the sensitivity and accuracy of the sensing method. Generally, the associated modelling remains simple (RC or RC transmission line). The material parameters are considered constant or having a negligible effect which can lead to serious reduction of accuracy. Comparisons between measurements and modelling require care and skill, and could be tricky. Thus, we propose here a comprehensive modelling, taking into account the influence of the material properties on the performances of the dielectric elastomer sensor (DES). Various parameters influencing the characteristics of the sensors have been identified: dielectric constant, hyper-elasticity. The variations of these parameters as a function of the strain impact the linearity and sensitivity of the sensor of few percent. The sensitivity of the DES is also evaluated changing geometrical parameters (initial thickness) and its design (rectangular and dog-bone shapes). We discuss the impact of the shape regarding stress. Finally, DES including a silicone elastomer sandwiched between two high conductive stretchable electrodes, were manufactured and investigated. Classic and reliable LCR measurements are detailed. Experimental results validate our numerical model of large strain sensor (>50%).

  13. A new soft dielectric silicone elastomer matrix with high mechanical integrity and low losses

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    Though dielectric elastomers (DEs) have many favourable properties, the issue of high driving voltages limits the commercial viability of the technology. Driving voltage can be lowered by decreasing the Young's modulus and increasing the dielectric permittivity of silicone elastomers. A decrease...... in Young's modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. A new soft elastomer matrix, with no loss of mechanical stability and high dielectric permittivity, was prepared through the use of alkyl chloride-functional siloxane copolymers...

  14. Modeling and feasibility study of a high resolution numerical time encoder in silicon and gallium arsenide integrated technologies

    International Nuclear Information System (INIS)

    Fota, C.

    1996-12-01

    This work is part of an evaluation of a high resolution time encoder implemented as a circular vernier. Two integrated technologies have been used, silicon CMOS and GaAs HEMT. After a short survey of the existing time encoding techniques, we propose a digital method using a circular time vernier built around two ring oscillators. We present the benefits of such a technique, a detailed analysis of the vernier, and simulation results. Technological spreads that are critical for such a time encoder have been measured on a silicon ship with 0.8 micron gate length CMOS technology. The achievable resolution is derived from the results. The frequencies dictated by the circular vernier architecture reach a few hundred Megahertz, the chip layout is thus critical, as showed from the measurements on a 0.3 micron GaAs HEMT chip. Measurements are compared with simulations for each chip. Several other circular vernier layouts are proposed in order to improve the results. A mathematical model of a calibration phase lock loop of the ring oscillators on a reference clock is also presented. (author)

  15. Investigation of Properties of Novel Silicon Pixel Assemblies Employing Thin n-in-p Sensors and 3D-Integration

    CERN Document Server

    Weigell, Philipp

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300/fb¹ , the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running|especially if the luminosity is raised to about 5x10^35/(cm²s¹ ) as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost-effective pixel assemblies with...

  16. Insertable B-Layer integration in the ATLAS experiment and development of future 3D silicon pixel sensors

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00371528; Røhne, Ole

    This work has two distinct objectives: the development of software for the integration of the Insertable B-Layer (IBL) in the ATLAS offline software framework and the study of the performance of 3D silicon sensors produced by SINTEF for future silicon pixel detectors. The former task consists in the implementation of the IBL byte stream converter. This offline tool performs the decoding of the binary-formatted data coming from the detector into information (e.g. hit position and Time over Threshold) that is stored in a format used in the reconstruction data flow. It also encodes the information extracted from simulations into a simulated IBL byte stream. The tool has been successfully used since the beginning of the LHC Run II data taking. The experimental work on SINTEF 3D sensors was performed in the framework of the development of pixel sensors for the next generation of tracking detectors. Preliminary tests on SINTEF 3D sensors showed that the majority of these devices suffers from high leakage currents, ...

  17. Silicon plasmonics at midinfrared using silicon-insulator-silicon platform

    Science.gov (United States)

    Gamal, Rania; Shafaay, Sarah; Ismail, Yehea; Swillam, Mohamed A.

    2017-01-01

    We propose devices based on doped silicon. Doped silicon is designed to act as a plasmonic medium in the midinfrared (MIR) range. The surface plasmon frequency of the doped silicon can be tuned within the MIR range, which gives rise to useful properties in the material's dispersion. We propose various plasmonic configurations that can be utilized for silicon on-chip applications in MIR. These devices have superior performance over conventional silicon devices and provide unique functionalities such as 90-sharp degree bends, T- and X-junction splitters, and stubs. These devices are CMOS-compatible and can be easily integrated with other electronic devices. In addition, the potential for biological and environmental sensing using doped silicon nanowires is demonstrated.

  18. Integration of the End Cap TEC+ of the CMS Silicon Strip Tracker

    CERN Document Server

    Bremer, Richard; Feld, Lutz

    2008-01-01

    At the European Organization for Nuclear Research (CERN) ne ar Geneva the new proton-proton collider ring LHC and the experiments that will be operated a t this accelerator are currently being finalised. Among these experiments is the multi-purpose det ector CMS whose aim it is to discover and investigate new physical phenomena that might become ac cessible by virtue of the high center- of-mass energy and luminosity of the LHC. Two of the most inte nsively studied possibilities are the discovery of the Higgs Boson and of particles from the spectr um of supersymmetric extensions of the Standard Model. CMS is the first large experiment of high- energy particle physics whose inner tracking system is exclusively instrumented with silicon d etector modules. This tracker comprises 15 148 silicon strip modules enclosing the interaction poin t in 10–12 layers. The 1. Physikalisches Institut B of RWTH Aachen was deeply involved in the completi on of the end caps of the tracking system. The institute played a leading...

  19. Noise characterization of silicon strip detectors-comparison of sensors with and without integrated jfet source-follower.

    CERN Document Server

    Giacomini, Gabriele

    Noise is often the main factor limiting the performance of detector systems. In this work a detailed study of the noise contributions in different types of silicon microstrip sensors is carried on. We investigate three sensors with double-sided readout fabricated by different suppliers for the ALICE experiment at the CERN LHC, in addition to detectors including an integrated JFET Source-Follower as a first signal conditioning stage. The latter have been designed as an attempt at improving the performance when very long strips, obtained by gangling together several sensors, are required. After a description of the strip sensors and of their operation, the “static” characterization measurements performed on them (current and capacitance versus voltage and/or frequency) are illustrated and interpreted. Numerical device simulation has been employed as an aid in interpreting some of the measurement results. The commonly used models for expressing the noise of the detector-amplifier system in terms of its relev...

  20. Imaging and chemical surface analysis of biomolecular functionalization of monolithically integrated on silicon Mach-Zehnder interferometric immunosensors

    Energy Technology Data Exchange (ETDEWEB)

    Gajos, Katarzyna, E-mail: kasia.fornal@uj.edu.pl [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Angelopoulou, Michailia; Petrou, Panagiota [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Awsiuk, Kamil [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Kakabakos, Sotirios [Institute of Nuclear & Radiological Sciences & Technology, Energy & Safety, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Haasnoot, Willem [RIKILT Wageningen UR, Akkermaalsbos 2, 6708 WB Wageningen (Netherlands); Bernasik, Andrzej [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Rysz, Jakub [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland); Marzec, Mateusz M. [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, Mickiewicza 30, 30-059 Kraków (Poland); Misiakos, Konstantinos; Raptis, Ioannis [Department of Microelectronics, Institute of Nanoscience and Nanotechnology, NCSR Demokritos, P. Grigoriou & Neapoleos St, Aghia Paraksevi 15310, Athens (Greece); Budkowski, Andrzej [M. Smoluchowski Institute of Physics, Jagiellonian University, Łojasiewicza 11, 30-348 Kraków (Poland)

    2016-11-01

    Highlights: • Optimization of probe immobilization with robotic spotter printing overlapping spots. • In-situ inspection of microstructured surfaces of biosensors integrated on silicon. • Imaging and chemical analysis of immobilization, surface blocking and immunoreaction. • Insight with molecular discrimination into step-by-step sensor surface modifications. • Optimized biofunctionalization improves sensor sensitivity and response repeatability. - Abstract: Time-of-flight secondary ion mass spectrometry (imaging, micro-analysis) has been employed to evaluate biofunctionalization of the sensing arm areas of Mach-Zehnder interferometers monolithically integrated on silicon chips for the immunochemical (competitive) detection of bovine κ-casein in goat milk. Biosensor surfaces are examined after: modification with (3-aminopropyl)triethoxysilane, application of multiple overlapping spots of κ-casein solutions, blocking with 100-times diluted goat milk, and reaction with monoclonal mouse anti-κ-casein antibodies in blocking solution. The areas spotted with κ-casein solutions of different concentrations are examined and optimum concentration providing homogeneous coverage is determined. Coverage of biosensor surfaces with biomolecules after each of the sequential steps employed in immunodetection is also evaluated with TOF-SIMS, supplemented by Atomic force microscopy and X-ray photoelectron spectroscopy. Uniform molecular distributions are observed on the sensing arm areas after spotting with optimum κ-casein concentration, blocking and immunoreaction. The corresponding biomolecular compositions are determined with a Principal Component Analysis that distinguished between protein amino acids and milk glycerides, as well as between amino acids characteristic for Mabs and κ-casein, respectively. Use of the optimum conditions (κ-casein concentration) for functionalization of chips with arrays of ten Mach-Zehnder interferometers provided on-chips assays

  1. Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

    Science.gov (United States)

    Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

    2017-06-26

    A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

  2. An All-Integrated Anode via Interlinked Chemical Bonding between Double-Shelled-Yolk-Structured Silicon and Binder for Lithium-Ion Batteries.

    Science.gov (United States)

    Liu, Yajie; Tai, Zhixin; Zhou, Tengfei; Sencadas, Vitor; Zhang, Jian; Zhang, Lei; Konstantinov, Konstantin; Guo, Zaiping; Liu, Hua Kun

    2017-11-01

    The concept of an all-integrated design with multifunctionalization is widely employed in optoelectronic devices, sensors, resonator systems, and microfluidic devices, resulting in benefits for many ongoing research projects. Here, maintaining structural/electrode stability against large volume change by means of an all-integrated design is realized for silicon anodes. An all-integrated silicon anode is achieved via multicomponent interlinking among carbon@void@silica@silicon (CVSS) nanospheres and cross-linked carboxymethyl cellulose and citric acid polymer binder (c-CMC-CA). Due to the additional protection from the silica layer, CVSS is superior to the carbon@void@silicon (CVS) electrode in terms of long-term cyclability. The as-prepared all-integrated CVSS electrode exhibits high mechanical strength, which can be ascribed to the high adhesivity and ductility of c-CMC-CA binder and the strong binding energy between CVSS and c-CMC-CA, as calculated based on density functional theory (DFT). This electrode exhibits a high reversible capacity of 1640 mA h g -1 after 100 cycles at a current density of 1 A g -1 , high rate performance, and long-term cycling stability with 84.6% capacity retention after 1000 cycles at 5 A g -1 . © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications

    KAUST Repository

    Nassar, Joanna M.

    2017-02-07

    We report CMOS technology enabled fabrication and system level integration of flexible bulk silicon (100) based multi-sensors platform which can simultaneously sense pressure, temperature, strain and humidity under various physical deformations. We also show an advanced wearable version for body vital monitoring which can enable advanced healthcare for IoT applications.

  4. Integrating a Silicon Solar Cell with a Triboelectric Nanogenerator via a Mutual Electrode for Harvesting Energy from Sunlight and Raindrops.

    Science.gov (United States)

    Liu, Yuqiang; Sun, Na; Liu, Jiawei; Wen, Zhen; Sun, Xuhui; Lee, Shuit-Tong; Sun, Baoquan

    2018-03-27

    Solar cells, as promising devices for converting light into electricity, have a dramatically reduced performance on rainy days. Here, an energy harvesting structure that integrates a solar cell and a triboelectric nanogenerator (TENG) device is built to realize power generation from both sunlight and raindrops. A heterojunction silicon (Si) solar cell is integrated with a TENG by a mutual electrode of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film. Regarding the solar cell, imprinted PEDOT:PSS is used to reduce light reflection, which leads to an enhanced short-circuit current density. A single-electrode-mode water-drop TENG on the solar cell is built by combining imprinted polydimethylsiloxane (PDMS) as a triboelectric material combined with a PEDOT:PSS layer as an electrode. The increasing contact area between the imprinted PDMS and water drops greatly improves the output of the TENG with a peak short-circuit current of ∼33.0 nA and a peak open-circuit voltage of ∼2.14 V, respectively. The hybrid energy harvesting system integrated electrode configuration can combine the advantages of high current level of a solar cell and high voltage of a TENG device, promising an efficient approach to collect energy from the environment in different weather conditions.

  5. Fabrication of a high-temperature microreactor with integrated heater and sensor patterns on an ultrathin silicon membrane

    NARCIS (Netherlands)

    Tiggelaar, Roald M.; Berenschot, Johan W.; van Male, P.; Oosterbroek, R.E.; Gardeniers, Johannes G.E.; de Croon, M.H.J.M.; Schouten, J.C.; van den Berg, Albert; Elwenspoek, Michael Curt

    2005-01-01

    In this paper critical steps in the fabrication process of a microreactor for high-temperature catalytic partial oxidation gas phase reactions are evaluated. The microreactor contains a flow channel etched in silicon, capped with an ultrathin composite membrane consisting of silicon and silicon

  6. Roof-integrated amorphous silicon photovoltaic installation at the Institute for Micro-Technology; Installation photovoltaique IMT Neuchatel silicium amorphe integre dans toiture

    Energy Technology Data Exchange (ETDEWEB)

    Tscharner, R.; Shah, A.V.

    2003-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) describes the 6.44 kW grid-connected photovoltaic (PV) power plant that has been in operation since 1996 at the Institute for Micro-Technology in Neuchatel, Switzerland. The PV plant, which features large-area, fully integrated modules using amorphous silicon cells was the first of its kind in Switzerland. Experience gained with the installation, which has been fully operational since its construction, as well as the power produced and efficiencies measured are presented and commented. The role of the installation as the forerunner of new, so-called 'micro-morph' thin-film solar cell technology developed at the institute is stressed. Technical details of the plant and its performance are given.

  7. Brush-paintable and highly stretchable Ag nanowire and PEDOT:PSS hybrid electrodes.

    Science.gov (United States)

    Lim, Ji-Eun; Lee, Sang-Mok; Kim, Seok-Soon; Kim, Tae-Woong; Koo, Hyun-Woo; Kim, Han-Ki

    2017-10-31

    Highly transparent and stretchable Ag nanowire (NW)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hybrid electrodes were prepared on stretchable polyurethane substrates by using simple and cost-effective brush painting technique. The optimized Ag NW/PEDOT:PSS hybrid electrode showed a sheet resistance of 19.7 Ohm/square and a high optical transmittance of 88.64% comparable to conventional ITO electrode. It was found that shear stress of the paintbrush led to an effective lateral alignment of the Ag NWs into the PEDOT:PSS matrix during brush painting process. In addition, we investigated mechanical properties of the brush painted Ag NW/PEDOT:PSS hybrid electrode using inner/outer bending test, stretching tests, twisting test and rolling test in detail. The optimized brush painted Ag NW/PEDOT:PSS electrode showed a higher strain (~30%) than brush painted Ag NW or sputtered ITO electrode. Furthermore, we demonstrated the outstanding stretchability of brush painted Ag NW/PEDOT:PSS hybrid electrode in two applications: stretchable interconnectors and stretchable electrodes for stretchable and wearable thin film heaters. These results provide clear evidence for its potential and widespread applications in next-generation, stretchable displays, solar cells, and electronic devices.

  8. Materials and mechanics for stretchable electronics.

    Science.gov (United States)

    Rogers, John A; Someya, Takao; Huang, Yonggang

    2010-03-26

    Recent advances in mechanics and materials provide routes to integrated circuits that can offer the electrical properties of conventional, rigid wafer-based technologies but with the ability to be stretched, compressed, twisted, bent, and deformed into arbitrary shapes. Inorganic and organic electronic materials in microstructured and nanostructured forms, intimately integrated with elastomeric substrates, offer particularly attractive characteristics, with realistic pathways to sophisticated embodiments. Here, we review these strategies and describe applications of them in systems ranging from electronic eyeball cameras to deformable light-emitting displays. We conclude with some perspectives on routes to commercialization, new device opportunities, and remaining challenges for research.

  9. High-Resolution Silicon-based Particle Sensor with Integrated Amplification, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I project will deliver a breakthrough in particle-detection sensors, by integrating an amplifying junction as part of the detector topology. Focusing...

  10. High-Resolution Silicon-based Particle Sensor with Integrated Amplification Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I project will deliver a breakthrough in particle-detection sensors, by integrating an amplifying junction as part of the detector topology. Focusing...

  11. Robust integration schemes for junction-based modulators in a 200mm CMOS compatible silicon photonic platform (Conference Presentation)

    Science.gov (United States)

    Szelag, Bertrand; Abraham, Alexis; Brision, Stéphane; Gindre, Paul; Blampey, Benjamin; Myko, André; Olivier, Segolene; Kopp, Christophe

    2017-05-01

    Silicon photonic is becoming a reality for next generation communication system addressing the increasing needs of HPC (High Performance Computing) systems and datacenters. CMOS compatible photonic platforms are developed in many foundries integrating passive and active devices. The use of existing and qualified microelectronics process guarantees cost efficient and mature photonic technologies. Meanwhile, photonic devices have their own fabrication constraints, not similar to those of cmos devices, which can affect their performances. In this paper, we are addressing the integration of PN junction Mach Zehnder modulator in a 200mm CMOS compatible photonic platform. Implantation based device characteristics are impacted by many process variations among which screening layer thickness, dopant diffusion, implantation mask overlay. CMOS devices are generally quite robust with respect to these processes thanks to dedicated design rules. For photonic devices, the situation is different since, most of the time, doped areas must be carefully located within waveguides and CMOS solutions like self-alignment to the gate cannot be applied. In this work, we present different robust integration solutions for junction-based modulators. A simulation setup has been built in order to optimize of the process conditions. It consist in a Mathlab interface coupling process and device electro-optic simulators in order to run many iterations. Illustrations of modulator characteristic variations with process parameters are done using this simulation setup. Parameters under study are, for instance, X and Y direction lithography shifts, screening oxide and slab thicknesses. A robust process and design approach leading to a pn junction Mach Zehnder modulator insensitive to lithography misalignment is then proposed. Simulation results are compared with experimental datas. Indeed, various modulators have been fabricated with different process conditions and integration schemes. Extensive

  12. Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

    International Nuclear Information System (INIS)

    Ghoneim, M. T.; Hussain, M. M.

    2015-01-01

    Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures

  13. High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

    Energy Technology Data Exchange (ETDEWEB)

    Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D.; Efetov, Dmitri K.; Assefa, Solomon; Koppens, Frank H. L.; Hone, James; Englund, Dirk

    2015-11-11

    Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal–oxide–semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron–phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

  14. Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-08-05

    Flexible memory can enable industrial, automobile, space, and smart grid centered harsh/extreme environment focused electronics application(s) for enhanced operation, safety, and monitoring where bent or complex shaped infrastructures are common and state-of-the-art rigid electronics cannot be deployed. Therefore, we report on the physical-mechanical-electrical characteristics of a flexible ferroelectric memory based on lead zirconium titanate as a key memory material and flexible version of bulk mono-crystalline silicon (100). The experimented devices show a bending radius down to 1.25 cm corresponding to 0.16% nominal strain (high pressure of ∼260 MPa), and full functionality up to 225 °C high temperature in ambient gas composition (21% oxygen and 55% relative humidity). The devices showed unaltered data retention and fatigue properties under harsh conditions, still the reduced memory window (20% difference between switching and non-switching currents at 225 °C) requires sensitive sense circuitry for proper functionality and is the limiting factor preventing operation at higher temperatures.

  15. Highly Stretchable, Biocompatible, Striated Substrate Made from Fugitive Glue

    Directory of Open Access Journals (Sweden)

    Wei Li

    2015-06-01

    Full Text Available We developed a novel substrate made from fugitive glue (styrenic block copolymer that can be used to analyze the effects of large strains on biological samples. The substrate has the following attributes: (1 It is easy to make from inexpensive components; (2 It is transparent and can be used in optical microscopy; (3 It is extremely stretchable as it can be stretched up to 700% strain; (4 It can be micro-molded, for example we created micro-ridges that are 6 μm high and 13 μm wide; (5 It is adhesive to biological fibers (we tested fibrin fibers, and can be used to uniformly stretch those fibers; (6 It is non-toxic to cells (we tested human mammary epithelial cells; (7 It can tolerate various salt concentrations up to 5 M NaCl and low (pH 0 and high (pH 14 pH values. Stretching of this extraordinary stretchable substrate is relatively uniform and thus, can be used to test multiple cells or fibers in parallel under the same conditions.

  16. Inverse-designed stretchable metalens with tunable focal distance

    Science.gov (United States)

    Callewaert, Francois; Velev, Vesselin; Jiang, Shizhou; Sahakian, Alan Varteres; Kumar, Prem; Aydin, Koray

    2018-02-01

    In this paper, we present an inverse-designed 3D-printed all-dielectric stretchable millimeter wave metalens with a tunable focal distance. A computational inverse-design method is used to design a flat metalens made of disconnected polymer building blocks with complex shapes, as opposed to conventional monolithic lenses. The proposed metalens provides better performance than a conventional Fresnel lens, using lesser amount of material and enabling larger focal distance tunability. The metalens is fabricated using a commercial 3D-printer and attached to a stretchable platform. Measurements and simulations show that the focal distance can be tuned by a factor of 4 with a stretching factor of only 75%, a nearly diffraction-limited focal spot, and with a 70% relative focusing efficiency, defined as the ratio between power focused in the focal spot and power going through the focal plane. The proposed platform can be extended for design and fabrication of multiple electromagnetic devices working from visible to microwave radiation depending on scaling of the devices.

  17. Design and characterization of low-loss 2D grating couplers for silicon photonics integrated circuits

    Science.gov (United States)

    Lacava, C.; Carrol, L.; Bozzola, A.; Marchetti, R.; Minzioni, P.; Cristiani, I.; Fournier, M.; Bernabe, S.; Gerace, D.; Andreani, L. C.

    2016-03-01

    We present the characterization of Silicon-on-insulator (SOI) photonic-crystal based 2D grating-couplers (2D-GCs) fabricated by CEA-Leti in the frame of the FP7 Fabulous project, which is dedicated to the realization of devices and systems for low-cost and high-performance passives-optical-networks. On the analyzed samples different test structures are present, including 2D-GC connected to another 2D-GC by different waveguides (in a Mach-Zehnder like configuration), and 2D-GC connected to two separate 2D-GCs, so as to allow a complete assessment of different parameters. Measurements were carried out using a tunable laser source operating in the extended telecom bandwidth and a fiber-based polarization controlling system at the input of device-under-test. The measured data yielded an overall fiber-to-fiber loss of 7.5 dB for the structure composed by an input 2D-GC connected to two identical 2D-GCs. This value was obtained at the peak wavelength of the grating, and the 3-dB bandwidth of the 2D-GC was assessed to be 43 nm. Assuming that the waveguide losses are negligible, so as to make a worst-case analysis, the coupling efficiency of the single 2D-GC results to be equal to -3.75 dB, constituting, to the best of our knowledge, the lowest value ever reported for a fully CMOS compatible 2D-GC. It is worth noting that both the obtained values are in good agreement with those expected by the numerical simulations performed using full 3D analysis by Lumerical FDTD-solutions.

  18. Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes

    NARCIS (Netherlands)

    Sakic, A.; Scholtes, T.L.M.; De Boer, W.B.; Golshani, N.; Derakhshandeh, J.; Nanver, L.K.

    2011-01-01

    An arsenic doping technique for depositing up to 40-?m-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm?3, a value that is solely

  19. An integrated optic adiabatic TE/TM mode splitter on silicon

    NARCIS (Netherlands)

    de Ridder, R.M.; Sander, A.F.M.; Driessen, A.; Fluitman, J.H.J.

    1993-01-01

    A compact integrated optic fundamental TE/TM mode splitter, based on the mode-sorting characteristics of an asymmetrical adiabatic Y junction of optical waveguides exhibiting shape birefringence, operating at 1550 nm, has been designed using the discrete sine method (DSM) and the beam propagation

  20. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

    NARCIS (Netherlands)

    Roozeboom, F.; Narayanan, V.; Kakushima, K.; Timans, P.J.; Gusev, E.P.; Karim, Z.; Gendt, S. De

    2016-01-01

    The topics of this annual symposium continue to describe the evolution of traditional scaling in CMOS integrated circuit manufacturing (More Moore for short), combined with the opportunities from growing diversification and embedded functionality (More than Moore). Once again, the main objective was

  1. mm-Wave Wireless Communications based on Silicon Photonics Integrated Circuits

    DEFF Research Database (Denmark)

    Rommel, Simon; Heck, Martijn; Vegas Olmos, Juan José

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency range are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical...

  2. Silicon Photonics Integrated Circuits for 5th Generation mm-Wave Wireless Communications

    DEFF Research Database (Denmark)

    Rommel, Simon; Vegas Olmos, Juan José; Tafur Monroy, Idelfonso

    Hybrid photonic-wireless transmission schemes in the mm-wave frequency are promising candidates to enable the multi-gigabit per second data communications required from wireless and mobile networks of the 5th and future generations. Photonic integration may pave the way to practical applicability...

  3. Stretchable surfaces with programmable 3D texture morphing for synthetic camouflaging skins.

    Science.gov (United States)

    Pikul, J H; Li, S; Bai, H; Hanlon, R T; Cohen, I; Shepherd, R F

    2017-10-13

    Technologies that use stretchable materials are increasingly important, yet we are unable to control how they stretch with much more sophistication than inflating balloons. Nature, however, demonstrates remarkable control of stretchable surfaces; for example, cephalopods can project hierarchical structures from their skin in milliseconds for a wide range of textural camouflage. Inspired by cephalopod muscular morphology, we developed synthetic tissue groupings that allowed programmable transformation of two-dimensional (2D) stretchable surfaces into target 3D shapes. The synthetic tissue groupings consisted of elastomeric membranes embedded with inextensible textile mesh that inflated to within 10% of their target shapes by using a simple fabrication method and modeling approach. These stretchable surfaces transform from flat sheets to 3D textures that imitate natural stone and plant shapes and camouflage into their background environments. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

  4. Stretchable surfaces with programmable 3D texture morphing for synthetic camouflaging skins

    Science.gov (United States)

    Pikul, J. H.; Li, S.; Bai, H.; Hanlon, R. T.; Cohen, I.; Shepherd, R. F.

    2017-10-01

    Technologies that use stretchable materials are increasingly important, yet we are unable to control how they stretch with much more sophistication than inflating balloons. Nature, however, demonstrates remarkable control of stretchable surfaces; for example, cephalopods can project hierarchical structures from their skin in milliseconds for a wide range of textural camouflage. Inspired by cephalopod muscular morphology, we developed synthetic tissue groupings that allowed programmable transformation of two-dimensional (2D) stretchable surfaces into target 3D shapes. The synthetic tissue groupings consisted of elastomeric membranes embedded with inextensible textile mesh that inflated to within 10% of their target shapes by using a simple fabrication method and modeling approach. These stretchable surfaces transform from flat sheets to 3D textures that imitate natural stone and plant shapes and camouflage into their background environments.

  5. BJT-based detector on high-resistivity silicon with integrated biasing structure

    Science.gov (United States)

    Verzellesi, G.; Batignani, G.; Bettarini, S.; Boscardin, M.; Bosisio, L.; Dalla Betta, G.-F.; Giacomini, G.; Piemonte, C.

    2006-11-01

    A novel method for biasing phototransistor-based radiation detectors on high-resistivity Si is presented, that relies on the integration into the detector base of a pnp transistor acting as a current source. The proposed approach can be extended in a natural way to the biasing of npn detector arrays, allowing different detectors to be biased at the same quiescent current, by connecting all the biasing pnp transistors with a diode-connected reference transistor (integrated onto the same chip), so that they form a current-mirror circuit. Relying on two-dimensional numerical device simulations, several test structures have been designed and fabricated, including single BJT detectors and detector arrays with pnp biasing transistors connected in the current-mirror configuration. The electrical characterization of fabricated structures shows that both single detectors and detector arrays are operational and behave in good agreement with simulations, thus demonstrating the feasibility of the proposed approach.

  6. Mechanical Characterization of Flexible and Stretchable Electronic Substrates

    OpenAIRE

    Wang, L.

    2010-01-01

    Conventional IC packages form a rigid shell around silicon IC dies. Their purpose is to provide environmental protection, electrical interconnect and heat dissipation. Despite the fact that majority of current silicon IC?s are realized in a very thin top layer of the silicon substrate (

  7. Mechanical Characterization of Flexible and Stretchable Electronic Substrates

    NARCIS (Netherlands)

    Wang, L.

    2010-01-01

    Conventional IC packages form a rigid shell around silicon IC dies. Their purpose is to provide environmental protection, electrical interconnect and heat dissipation. Despite the fact that majority of current silicon IC?s are realized in a very thin top layer of the silicon substrate (<10µm), the

  8. Meltability and Stretchability of White Brined Cheese: Effect of Emulsifier Salts

    OpenAIRE

    Khaled Abu-Alruz; Ayman S. Mazahreh; Ali F. Al-Shawabkeh; Amer A. Omari; Jihad M. Quasem

    2009-01-01

    Problem statement: This study was based on the hypothesis that by adding low concentrations of emulsifier salts, may specifically act on the cross linking bonds of the protein matrix, to the original brine (storage medium) it would be possible to induce meltability and stretchability in white brined cheese. Approach: A new apparatus for measuring the actual stretchability was designed and constructed; measurements on different cheese samples proved its validity and reliability to measure stre...

  9. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  10. Skin-Attachable, Stretchable Electrochemical Sweat Sensor for Glucose and pH Detection.

    Science.gov (United States)

    Oh, Seung Yun; Hong, Soo Yeong; Jeong, Yu Ra; Yun, Junyeong; Park, Heun; Jin, Sang Woo; Lee, Geumbee; Oh, Ju Hyun; Lee, Hanchan; Lee, Sang-Soo; Ha, Jeong Sook

    2018-04-11

    As part of increased efforts to develop wearable healthcare devices for monitoring and managing physiological and metabolic information, stretchable electrochemical sweat sensors have been investigated. In this study, we report on the fabrication of a stretchable and skin-attachable electrochemical sensor for detecting glucose and pH in sweat. A patterned stretchable electrode was fabricated via layer-by-layer deposition of carbon nanotubes (CNTs) on top of patterned Au nanosheets (AuNS) prepared by filtration onto stretchable substrate. For the detection of glucose and pH, CoWO 4 /CNT and polyaniline/CNT nanocomposites were coated onto the CNT-AuNS electrodes, respectively. A reference electrode was prepared via chlorination of silver nanowires. Encapsulation of the stretchable sensor with sticky silbione led to a skin-attachable sweat sensor. Our sensor showed high performance with sensitivities of 10.89 μA mM -1 cm -2 and 71.44 mV pH -1 for glucose and pH, respectively, with mechanical stability up to 30% stretching and air stability for 10 days. The sensor also showed good adhesion even to wet skin, allowing the detection of glucose and pH in sweat from running while being attached onto the skin. This work suggests the application of our stretchable and skin-attachable electrochemical sensor to health management as a high-performance healthcare wearable device.

  11. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    Energy Technology Data Exchange (ETDEWEB)

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-07-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a {approx}10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38.

  12. Gold nanostructure-integrated silica-on-silicon waveguide for the detection of antibiotics in milk and milk products

    Science.gov (United States)

    Ozhikandathil, Jayan; Badilescu, Simona; Packirisamy, Muthukumaran

    2012-10-01

    Antibiotics are extensively used in veterinary medicine for the treatment of infectious diseases. The use of antibiotics for the treatment of animals used for food production raised the concern of the public and a rapid screening method became necessary. A novel approach of detection of antibiotics in milk is reported in this work by using an immunoassay format and the Localized Surface Plasmon Resonance property of gold. An antibiotic from the penicillin family that is, ampicillin is used for testing. Gold nanostructures deposited on a glass substrate by a novel convective assembly method were heat-treated to form a nanoisland morphology. The Au nanostructures were functionalized and the corresponding antibody was absorbed from a solution. Solutions with known concentrations of antigen (antibiotics) were subsequently added and the spectral changes were monitored step by step. The Au LSPR band corresponding to the nano-island structure was found to be suitable for the detection of the antibody antigen interaction. The detection of the ampicillin was successfully demonstrated with the gold nano-islands deposited on glass substrate. This process was subsequently adapted for the integration of gold nanostructures on the silica-on-silicon waveguide for the purpose of detecting antibiotics.

  13. Growth of linked silicon/carbon nanospheres on copper substrate as integrated electrodes for Li-ion batteries.

    Science.gov (United States)

    Zhang, Zailei; Wang, Yanhong; Tan, Qiangqiang; Li, Dan; Chen, Yunfa; Zhong, Ziyi; Su, Fabing

    2014-01-07

    We report the growth of linked silicon/carbon (Si/C) nanospheres on Cu substrate as an integrated anode for Li-ion batteries. The Si/C nanospheres were synthesized by a catalytic chemical vapor deposition (CCVD) on Cu substrate as current collector using methyltrichlorosilane as precursor, a cheap by-product of the organosilane industry. The samples were characterized by X-ray diffraction, transmission electron microscopy, scanning electron microscopy, thermal gravimetry, Raman spectroscopy, nitrogen adsorption, inductively coupled plasma optical emission spectrometry, and X-ray photoelectron spectroscopy. It was found that the linked Si/C nanospheres with a diameter of 400-500 nm contain Si, Cu(x)Si, and Cu nanocrystals, which are highly dispersed in the amorphous carbon nanospheres. A CCVD mechanism was tentatively proposed, in which the evaporated Cu atoms play a critical role to catalytically grown Si nanocrystals embedded within linked Si/C nanospheres. The electrochemical measurement shows that these Si/C nanospheres delivered a capacity of 998.9, 713.1, 320.6, and 817.8 mA h g(-1) at 50, 200, 800, and 50 mA g(-1) respectively after 50 cycles, much higher than that of commercial graphite anode. This is because the amorphous carbon, Cu(x)Si, and Cu in the Si/C nanospheres could buffer the volume change of Si nanocrystals during the Li insertion and extraction reactions, thus hindering the cracking or crumbling of the electrode. Furthermore, the incorporation of conductive Cu(x)Si and Cu nanocrystals and the integration of active electrode materials with Cu substrate may improve the electrical conductivity from the current collector to individual Si active particles, resulting in a remarkably enhanced reversible capacity and cycling stability. The work will be helpful in the fabrication of low cost binder-free Si/C anode materials for Li-ion batteries.

  14. Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide

    Science.gov (United States)

    Weng, M. H.; Clark, D. T.; Wright, S. N.; Gordon, D. L.; Duncan, M. A.; Kirkham, S. J.; Idris, M. I.; Chan, H. K.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

    2017-05-01

    A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300 °C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2000 h at 300 °C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1000 h at 300 °C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realise sensor interface circuits capable of operating above 300 °C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.

  15. Stretchable, Transparent, and Stretch-Unresponsive Capacitive Touch Sensor Array with Selectively Patterned Silver Nanowires/Reduced Graphene Oxide Electrodes.

    Science.gov (United States)

    Choi, Tae Young; Hwang, Byeong-Ung; Kim, Bo-Yeong; Trung, Tran Quang; Nam, Yun Hyoung; Kim, Do-Nyun; Eom, Kilho; Lee, Nae-Eung

    2017-05-31

    Stretchable and transparent touch sensors are essential input devices for future stretchable transparent electronics. Capacitive touch sensors with a simple structure of only two electrodes and one dielectric are an established technology in current rigid electronics. However, the development of stretchable and transparent capacitive touch sensors has been limited due to changes in capacitance resulting from dimensional changes in elastomeric dielectrics and difficulty in obtaining stretchable transparent electrodes that are stable under large strains. Herein, a stretch-unresponsive stretchable and transparent capacitive touch sensor array was demonstrated by employing stretchable and transparent electrodes with a simple selective-patterning process and by carefully selecting dielectric and substrate materials with low strain responsivity. A selective-patterning process was used to embed a stretchable and transparent silver nanowires/reduced graphene oxide (AgNWs/rGO) electrode line into a polyurethane (PU) dielectric layer on a polydimethylsiloxane (PDMS) substrate using oxygen plasma treatment. This method provides the ability to directly fabricate thin film electrode lines on elastomeric substrates and can be used in conventional processes employed in stretchable electronics. We used a dielectric (PU) with a Poisson's ratio smaller than that of the substrate (PDMS), which prevented changes in the capacitance resulting from stretching of the sensor. The stretch-unresponsive touch sensing capability of our transparent and stretchable capacitive touch sensor has great potential in wearable electronics and human-machine interfaces.

  16. Photoacoustic CO2 sensor system: design and potential for miniaturization and integration in silicon

    Science.gov (United States)

    Huber, J.; Wöllenstein, J.

    2015-05-01

    The detection of CO2 indoors has a large impact on today's sensor market. The ambient room climate is important for human health and wellbeing. The CO2 concentration is a main indicator for indoor climate and correlates with the number of persons inside a room. People in Europe spend more than 90% of their time indoors. This leads to a high demand for miniaturized and energy efficient CO2 sensors. To realize small and energy-efficient mass-market sensors, we develop novel miniaturized photoacoustic sensor systems with optimized design for real-time and selective CO2 detection. The sensor system consists of two chambers, a measurement and a detection chamber. The detection chamber consists of an integrated pressure sensor under special gas atmosphere. As pressure sensor we use a commercially available cell phone microphone. We describe a possible miniaturization process of the developed system by regarding the possibility of integration of all sensor parts. The system is manufactured in precision mechanics with IR-optical sapphire windows as optical connections. During the miniaturization process the sapphire windows are replaced by Si chips with a special IR anti-reflection coating. The developed system is characterized in detail with gas measurements and optical transmission investigations. The results of the characterization process offer a high potential for further miniaturization with high capability for mass market applications.

  17. Aluminum nitride electro-optic phase shifter for backend integration on silicon.

    Science.gov (United States)

    Zhu, Shiyang; Lo, Guo-Qiang

    2016-06-13

    An AlN electro-optic phase shifter with a parallel plate capacitor structure is fabricated on Si using the back-end complementary metal-oxide-semiconductor technology, which is feasible for multilayer photonics integration. The modulation efficiency (Vπ⋅Lπ product) measured from the fabricated waveguide-ring resonators and Mach-Zehnder Interferometer (MZI) modulators near the 1550-nm wavelength is ∼240 V⋅cm for the transverse electric (TE) mode and ∼320 V⋅cm for the transverse magnetic (TM) mode, from which the Pockels coefficient of the deposited AlN is deduced to be ∼1.0 pm/V for both TE and TM modes. The methods for further modulation efficiency improvement are addressed.

  18. III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Ringel, Steven [The Ohio State Univ., Columbus, OH (United States); Carlin, John A [The Ohio State Univ., Columbus, OH (United States); Grassman, Tyler [The Ohio State Univ., Columbus, OH (United States)

    2018-04-17

    This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of our recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first

  19. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  20. Stretchable, Adhesion-Tunable Dry Adhesive by Surface Wrinkling

    KAUST Repository

    Jeong, Hoon Eui

    2010-02-16

    We introduce a simple yet robust method of fabricating a stretchable, adhesion-tunable dry adhesive by combining replica molding and surface wrinkling. By utilizing a thin, wrinkled polydimethyl siloxane (PDMS) sheet with a thickness of 1 mm with built-in micropillars, active, dynamic control of normal and shear adhesion was achieved. Relatively strong normal (∼10.8 N/cm2) and shear adhesion (∼14.7 N/cm2) forces could be obtained for a fully extended (strained) PDMS sheet (prestrain of∼3%), whereas the forces could be rapidly reduced to nearly zero once the prestrain was released (prestrain of ∼0.5%). Moreover, durability tests demonstrated that the adhesion strength in both the normal and shear directions was maintained over more than 100 cycles of attachment and detachment. © 2010 American Chemical Society.

  1. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    Energy Technology Data Exchange (ETDEWEB)

    Weigell, Philipp

    2013-01-15

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb{sup -1}, the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10{sup 35} cm{sup -2}s{sup -1} as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10{sup 16} n{sub eq}/cm{sup 2}. A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering

  2. Investigation of properties of novel silicon pixel assemblies employing thin n-in-p sensors and 3D-integration

    International Nuclear Information System (INIS)

    Weigell, Philipp

    2013-01-01

    Until the end of the 2020 decade the LHC programme will be defining the high energy frontier of particle physics. During this time, three upgrade steps of the accelerator are currently planned to further increase the luminosity and energy reach. In the course of these upgrades the specifications of several parts of the current LHC detectors will be exceeded. Especially, the innermost tracking detectors are challenged by the increasing track densities and the radiation damage. This thesis focuses on the implications for the ATLAS experiment. Here, around 2021/2, after having collected an integrated luminosity of around 300 fb -1 , the silicon and gas detector components of the inner tracker will reach the end of their lifetime and will need to be replaced to ensure sufficient performance for continued running - especially if the luminosity is raised to about 5 x 10 35 cm -2 s -1 as currently planned. An all silicon inner detector is foreseen to be installed. This upgrade demands cost effective pixel assemblies with a minimal material budget, a larger active area fraction as compared to the current detectors, and a higher granularity. Furthermore, the assemblies must be able to withstand received fluences up to 2 . 10 16 n eq /cm 2 . A new pixel assembly concept answering the challenges posed by the high instantaneous luminosities is investigated in this thesis. It employs five novel technologies, namely n-in-p pixel sensors, thin pixel sensors, slim edges with or without implanted sensor sides, and 3D-integration incorporating a new interconnection technology, named Solid Liquid InterDiffusion (SLID) as well as Inter-Chip-Vias (ICVs). n-in-p sensors are cost-effective, since they only need patterned processing on one side. Their performance before and after irradiation is investigated and compared to results obtained with currently used n-in-n sensors. Reducing the thickness of the sensors lowers the amount of multiple scattering within the tracking system and leads

  3. Corrosion of silicon integrated circuits and lifetime predictions in implantable electronic devices

    Science.gov (United States)

    Vanhoestenberghe, A.; Donaldson, N.

    2013-06-01

    Corrosion is a prime concern for active implantable devices. In this paper we review the principles underlying the concepts of hermetic packages and encapsulation, used to protect implanted electronics, some of which remain widely overlooked. We discuss how technological advances have created a need to update the way we evaluate the suitability of both protection methods. We demonstrate how lifetime predictability is lost for very small hermetic packages and introduce a single parameter to compare different packages, with an equation to calculate the minimum sensitivity required from a test method to guarantee a given lifetime. In the second part of this paper, we review the literature on the corrosion of encapsulated integrated circuits (ICs) and, following a new analysis of published data, we propose an equation for the pre-corrosion lifetime of implanted ICs, and discuss the influence of the temperature, relative humidity, encapsulation and field-strength. As any new protection will be tested under accelerated conditions, we demonstrate the sensitivity of acceleration factors to some inaccurately known parameters. These results are relevant for any application of electronics working in a moist environment. Our comparison of encapsulation and hermetic packages suggests that both concepts may be suitable for future implants.

  4. Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

    Directory of Open Access Journals (Sweden)

    Jaber Derakhshandeh

    2011-12-01

    Full Text Available An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm−3, a value that is solely limited by the cleanness of the epitaxial reactor chamber. To ensure such a low doping concentration, first an As-doped Si seed layer is grown with a concentration of 1016 to 1017 cm−3, after which the dopant gas arsine is turned off and a thick lightly-doped epi-layer is deposited. The final doping in the thick epi-layer relies on the segregation and incorporation of As from the seed layer, and it also depends on the final thickness of the layer, and the exact growth cycles. The obtained epi-layers exhibit a low density of stacking faults, an over-the-wafer doping uniformity of 3.6%, and a lifetime of generated carriers of more than 2.5 ms. Furthermore, the implementation of a segmented photodiode electron detector is demonstrated, featuring a 30 pF capacitance and a 90 Ω series resistance for a 7.6 mm2 anode area.

  5. Performance prediction for silicon photonics integrated circuits with layout-dependent correlated manufacturing variability.

    Science.gov (United States)

    Lu, Zeqin; Jhoja, Jaspreet; Klein, Jackson; Wang, Xu; Liu, Amy; Flueckiger, Jonas; Pond, James; Chrostowski, Lukas

    2017-05-01

    This work develops an enhanced Monte Carlo (MC) simulation methodology to predict the impacts of layout-dependent correlated manufacturing variations on the performance of photonics integrated circuits (PICs). First, to enable such performance prediction, we demonstrate a simple method with sub-nanometer accuracy to characterize photonics manufacturing variations, where the width and height for a fabricated waveguide can be extracted from the spectral response of a racetrack resonator. By measuring the spectral responses for a large number of identical resonators spread over a wafer, statistical results for the variations of waveguide width and height can be obtained. Second, we develop models for the layout-dependent enhanced MC simulation. Our models use netlist extraction to transfer physical layouts into circuit simulators. Spatially correlated physical variations across the PICs are simulated on a discrete grid and are mapped to each circuit component, so that the performance for each component can be updated according to its obtained variations, and therefore, circuit simulations take the correlated variations between components into account. The simulation flow and theoretical models for our layout-dependent enhanced MC simulation are detailed in this paper. As examples, several ring-resonator filter circuits are studied using the developed enhanced MC simulation, and statistical results from the simulations can predict both common-mode and differential-mode variations of the circuit performance.

  6. A monolithic lead sulfide-silicon MOS integrated-circuit structure

    Science.gov (United States)

    Jhabvala, M. D.; Barrett, J. R.

    1982-01-01

    A technique is developed for directly integrating infrared photoconductive PbS detector material with MOS transistors. A layer of chromium, instead of aluminum, is deposited followed by a gold deposition in order to ensure device survival during the chemical deposition of the PbS. Among other devices, a structure was fabricated and evaluated in which the PbS was directly coupled to the gate of a PMOS. The external bias, load, and source resistors were connected and the circuit was operated as a source-follower amplifier. Radiometric evaluations were performed on a variety of different MOSFETs of different geometry. In addition, various detector elements were simultaneously fabricated to demonstrate small element capability, and it was shown that elements of 25 x 25 microns could easily be fabricated. Results of room temperature evaluations using a filtered 700 K black body source yielded a detectivity at peak wavelength of 10 to the 11th cm (root Hz)/W at 100 Hz chopping frequency.

  7. Inflammation-free, gas-permeable, lightweight, stretchable on-skin electronics with nanomeshes.

    Science.gov (United States)

    Miyamoto, Akihito; Lee, Sungwon; Cooray, Nawalage Florence; Lee, Sunghoon; Mori, Mami; Matsuhisa, Naoji; Jin, Hanbit; Yoda, Leona; Yokota, Tomoyuki; Itoh, Akira; Sekino, Masaki; Kawasaki, Hiroshi; Ebihara, Tamotsu; Amagai, Masayuki; Someya, Takao

    2017-09-01

    Thin-film electronic devices can be integrated with skin for health monitoring and/or for interfacing with machines. Minimal invasiveness is highly desirable when applying wearable electronics directly onto human skin. However, manufacturing such on-skin electronics on planar substrates results in limited gas permeability. Therefore, it is necessary to systematically investigate their long-term physiological and psychological effects. As a demonstration of substrate-free electronics, here we show the successful fabrication of inflammation-free, highly gas-permeable, ultrathin, lightweight and stretchable sensors that can be directly laminated onto human skin for long periods of time, realized with a conductive nanomesh structure. A one-week skin patch test revealed that the risk of inflammation caused by on-skin sensors can be significantly suppressed by using the nanomesh sensors. Furthermore, a wireless system that can detect touch, temperature and pressure is successfully demonstrated using a nanomesh with excellent mechanical durability. In addition, electromyogram recordings were successfully taken with minimal discomfort to the user.

  8. Inflammation-free, gas-permeable, lightweight, stretchable on-skin electronics with nanomeshes

    Science.gov (United States)

    Miyamoto, Akihito; Lee, Sungwon; Cooray, Nawalage Florence; Lee, Sunghoon; Mori, Mami; Matsuhisa, Naoji; Jin, Hanbit; Yoda, Leona; Yokota, Tomoyuki; Itoh, Akira; Sekino, Masaki; Kawasaki, Hiroshi; Ebihara, Tamotsu; Amagai, Masayuki; Someya, Takao

    2017-09-01

    Thin-film electronic devices can be integrated with skin for health monitoring and/or for interfacing with machines. Minimal invasiveness is highly desirable when applying wearable electronics directly onto human skin. However, manufacturing such on-skin electronics on planar substrates results in limited gas permeability. Therefore, it is necessary to systematically investigate their long-term physiological and psychological effects. As a demonstration of substrate-free electronics, here we show the successful fabrication of inflammation-free, highly gas-permeable, ultrathin, lightweight and stretchable sensors that can be directly laminated onto human skin for long periods of time, realized with a conductive nanomesh structure. A one-week skin patch test revealed that the risk of inflammation caused by on-skin sensors can be significantly suppressed by using the nanomesh sensors. Furthermore, a wireless system that can detect touch, temperature and pressure is successfully demonstrated using a nanomesh with excellent mechanical durability. In addition, electromyogram recordings were successfully taken with minimal discomfort to the user.

  9. Finite element analysis on deformation of stretchable electronic interconnect substrate using polydimethylsiloxanes (PDMS)

    Science.gov (United States)

    Roslan, M. F.; Shaffiar, N. M.; Khairusshima, M. K. N.; Sharifah, I. S. S.

    2018-01-01

    Over the years, the technology of electronic industry has growth tremendously. Open ended research on how to make a better concept of electronic circuit is ongoing especially on the stretchable electronic devices. There are many designs to achieve stretchability in electronic circuits. The problem occurs when deformation applied to the stretchable electronic circuit, it cannot maintain its functionality. Fracture may happen on the conductor. In this research, the study on deformation of stretchable electronic interconnects substrate using Polydimethlysiloxanes is carried out. The purpose of this research are to study the axial deformation occur, to determine the optimum shape of the conductor designs (horseshoe, rectangular and u-shape design) for the stretchable electronic interconnect and to compare the mechanical properties of Polydimethlysiloxanes (PDMS) with Polyurethane (PU) using Finite Element Analysis (FEA). The simulation was done on the FE model of the stretchable circuit with dimension of 2.4 X 2.4 X 0.5 mm. The stretching of the FE model was simulated with the range of elongation at 10, 20 and 30 percent from its original length in order to find the strain value for all three of the conductor designs. The best conductor design is used to simulate with different types of substrate (PDMS and PU). From the simulation result, Horseshoe design record the lowest strain value for each elongation, followed by rectangular and U-shape design. Thus, Horseshoe is considered as the optimum design for the conductor compared to the other two designs. From the result also, it shows that PDMS substrate will offer more maximum allowable stretchability compared to PU substrates. Thus PDMS is considered as a better substrate compare to PU. PDMS is a good material to replace PU since it can perform under tension much better mechanically.

  10. Enhanced tolerance to stretch-induced performance degradation of stretchable MnO2-based supercapacitors.

    Science.gov (United States)

    Huang, Yan; Huang, Yang; Meng, Wenjun; Zhu, Minshen; Xue, Hongtao; Lee, Chun-Sing; Zhi, Chunyi

    2015-02-04

    The performance of many stretchable electronics, such as energy storage devices and strain sensors, is highly limited by the structural breakdown arising from the stretch imposed. In this article, we focus on a detailed study on materials matching between functional materials and their conductive substrate, as well as enhancement of the tolerance to stretch-induced performance degradation of stretchable supercapacitors, which are essential for the design of a stretchable device. It is revealed that, being widely utilized as the electrode material of the stretchable supercapacitor, metal oxides such as MnO2 nanosheets have serious strain-induced performance degradation due to their rigid structure. In comparison, with conducting polymers like a polypyrrole (PPy) film as the electrochemically active material, the performance of stretchable supercapacitors can be well preserved under strain. Therefore, a smart design is to combine PPy with MnO2 nanosheets to achieve enhanced tolerance to strain-induced performance degradation of MnO2-based supercapacitors, which is realized by fabricating an electrode of PPy-penetrated MnO2 nanosheets. The composite electrodes exhibit a remarkable enhanced tolerance to strain-induced performance degradation with well-preserved performance over 93% under strain. The detailed morphology and electrochemical impedance variations are investigated for the mechanism analyses. Our work presents a systematic investigation on the selection and matching of electrode materials for stretchable supercapacitors to achieve high performance and great tolerance to strain, which may guide the selection of functional materials and their substrate materials for the next-generation of stretchable electronics.

  11. The significance of strength of silicon carbide for the mechanical integrity of coated fuel particles for HTRs

    International Nuclear Information System (INIS)

    Bongartz, K.; Scheer, A.; Schuster, H.; Taeuber, K.

    1975-01-01

    Silicon carbide (SiC) and pyrocarbon are used as coating material for the HTR fuel particles. The PyC shell having a certain strength acts as a pressure vessel for the fission gases whereas the SiC shell has to retain the solid fission products in the fuel kernel. For measuring the strength of coating material the so-called Brittle Ring Test was developed. Strength and Young's modulus can be measured simultaneously with this method on SiC or PyC rings prepared out of the coating material of real fuel particles. The strength measured on the ring under a certain stress distribution which is characteristic for this method is transformed with the aid of the Weibull formalism for brittle fracture into the equivalent strength of the spherical coating shell on the fuel particle under uniform stress caused by the fission gas pressure. The values measured for the strength of the SiC were high (400-700MN/m 2 ), it could therefore be assumed that a SiC layer might contribute significantly also to the mechanical strength of the fuel coating. This assumption was confirmed by an irradiation test on coated particles with PyC-SiC-PyC coatings. There were several particles with all PyC layers broken during the irradiation, whereas the SiC layers remained intact having to withstand the fission gas pressure alone. This fact can only be explained assuming that the strength of the SiC is within the range of the values measured with the brittle ring test. The result indicates that, in optimising the coating of a fuel particle, the PyC layers of a multilayer coating should be considered alone as prospective layers for the SiC. The SiC shell, besides acting as a fission product barrier, is then also responsible for the mechanical integrity of the particle

  12. A low-power, high-speed, 9-channel germanium-silicon electro-absorption modulator array integrated with digital CMOS driver and wavelength multiplexer.

    Science.gov (United States)

    Krishnamoorthy, A V; Zheng, X; Feng, D; Lexau, J; Buckwalter, J F; Thacker, H D; Liu, F; Luo, Y; Chang, E; Amberg, P; Shubin, I; Djordjevic, S S; Lee, J H; Lin, S; Liang, H; Abed, A; Shafiiha, R; Raj, K; Ho, R; Asghari, M; Cunningham, J E

    2014-05-19

    We demonstrate the first germanium-silicon C-band electro-absorption based waveguide modulator array and echelle-grating-based silicon wavelength multiplexer integrated with a digital CMOS driver circuit. A 9-channel, 10Gbps SiGe electro-absorption wavelength-multiplexed modulator array consumed a power of 5.8mW per channel while being modulated at 10.25Gbps by 40nm CMOS drivers delivering peak-to-peak voltage swings of 2V, achieving a modulation energy-efficiency of ~570fJ/bit including drivers. Performance up to 25Gbps on a single-channel SiGe modulator and CMOS driver is also reported.

  13. Fabrication Approaches to Interconnect Based Devices for Stretchable Electronics: A Review

    Science.gov (United States)

    Nagels, Steven

    2018-01-01

    Stretchable electronics promise to naturalize the way that we are surrounded by and interact with our devices. Sensors that can stretch and bend furthermore have become increasingly relevant as the technology behind them matures rapidly from lab-based workflows to industrially applicable production principles. Regardless of the specific materials used, creating stretchable conductors involves either the implementation of strain reliefs through insightful geometric patterning, the dispersion of stiff conductive filler in an elastomeric matrix, or the employment of intrinsically stretchable conductive materials. These basic principles however have spawned a myriad of materials systems wherein future application engineers need to find their way. This paper reports a literature study on the spectrum of different approaches towards stretchable electronics, discusses standardization of characteristic tests together with their reports and estimates matureness for industry. Patterned copper foils that are embedded in elastomeric sheets, which are closest to conventional electronic circuits processing, make up one end of the spectrum. Furthest from industry are the more recent circuits based on intrinsically stretchable liquid metals. These show extremely promising results, however, as a technology, liquid metal is not mature enough to be adapted. Printing makes up the transition between both ends, and is also well established on an industrial level, but traditionally not linked to creating electronics. Even though a certain level of maturity was found amongst the approaches that are reviewed herein, industrial adaptation for consumer electronics remains unpredictable without a designated break-through commercial application. PMID:29510497

  14. The Combination of Coagulation and Stretchability Temperature on Mozzarella Chemical Quality with Lime Juice as Acidifier

    Directory of Open Access Journals (Sweden)

    Purwadi Purwadi

    2012-02-01

    Full Text Available This research was conducted about Mozzarella cheese manufacturing using lime juice as acidifier. The objectives of current research were to know the potency of lime juice as acidifier to make Mozarella cheese and its chemical quality. The method used in this research was 4x4 factorial design consisted of two factors. The first factor was coagulation temperature (G namely : G1=30 oC, G2=35 oC, G3=40 oC, and G4=45 oC, and the second factor was stretchable temperature (M namely: M1=70 oC, M2=75 oC, M3=80 oc, and M4=85 oC. Variables measured were whey protein level, whey dry matter, moisture stretchable protein and moisture stretchable dry matter. Variation analysis showed that the interaction between coagulation temperature and strechable temperature gave no significant difference (P<0.05. The best combination treatment was coagulatiom  temperature 30 oC with stretchable temperature 75 oC. Keywords: coagulation, stretchability, chemical quality, mozarella cheese, lime juice

  15. Fast and stable redox reactions of MnO₂/CNT hybrid electrodes for dynamically stretchable pseudocapacitors.

    Science.gov (United States)

    Gu, Taoli; Wei, Bingqing

    2015-07-21

    Pseudocapacitors, which are energy storage devices that take advantage of redox reactions to store electricity, have a different charge storage mechanism compared to lithium-ion batteries (LIBs) and electric double-layer capacitors (EDLCs), and they could realize further gains if they were used as stretchable power sources. The realization of dynamically stretchable pseudocapacitors and understanding of the underlying fundamentals of their mechanical-electrochemical relationship have become indispensable. We report herein the electrochemical performance of dynamically stretchable pseudocapacitors using buckled MnO2/CNT hybrid electrodes. The extremely small relaxation time constant of less than 0.15 s indicates a fast redox reaction at the MnO2/CNT hybrid electrodes, securing a stable electrochemical performance for the dynamically stretchable pseudocapacitors. This finding and the fundamental understanding gained from the pseudo-capacitive behavior coupled with mechanical deformation under a dynamic stretching mode would provide guidance to further improve their overall performance including a higher power density than LIBs, a higher energy density than EDLCs, and a long-life cycling stability. Most importantly, these results will potentially accelerate the applications of stretchable pseudocapacitors for flexible and biomedical electronics.

  16. Large-sized out-of-plane stretchable electrodes based on poly-dimethylsiloxane substrate

    International Nuclear Information System (INIS)

    Chou, Namsun; Lee, Jongho; Kim, Sohee

    2014-01-01

    This paper describes a reliable fabrication method of stretchable electrodes based on poly-dimethylsiloxane (PDMS) substrate. The electrode traces and pads were formed in out-of-plane structures to improve the flexibility and stretchability of the electrode array. The suspended traces and pads were attached to the PDMS substrate via parylene posts that were located nearby the traces and under the pads. As only conventional micro-electro-mechanical systems techniques were used, the out-of-plane electrode arrays were clearly fabricated at wafer level with high yield and reliability. Also, bi-layer out-of-plane electrodes were formed through additional fabrication steps in addition to mono-layer out-of-plane electrodes. The mechanical characteristics such as the stretchability, flexibility, and foldability of the fabricated electrodes were evaluated, resulting in stable electrical connection of the metal traces with up to 32.4% strain and up to 360° twist angle over 25 mm. The durability in stretched condition was validated by cyclic stretch test with 10% and 20% strain, resulting in electrical disconnection at 8600 cycles when subjected to 20% strain. From these results, it is concluded that the proposed fabrication method produced highly reliable, out-of-plane and stretchable electrodes, which would be used in various flexible and stretchable electronics applications

  17. Fabrication Approaches to Interconnect Based Devices for Stretchable Electronics: A Review.

    Science.gov (United States)

    Nagels, Steven; Deferme, Wim

    2018-03-03

    Stretchable electronics promise to naturalize the way that we are surrounded by and interact with our devices. Sensors that can stretch and bend furthermore have become increasingly relevant as the technology behind them matures rapidly from lab-based workflows to industrially applicable production principles. Regardless of the specific materials used, creating stretchable conductors involves either the implementation of strain reliefs through insightful geometric patterning, the dispersion of stiff conductive filler in an elastomeric matrix, or the employment of intrinsically stretchable conductive materials. These basic principles however have spawned a myriad of materials systems wherein future application engineers need to find their way. This paper reports a literature study on the spectrum of different approaches towards stretchable electronics, discusses standardization of characteristic tests together with their reports and estimates matureness for industry. Patterned copper foils that are embedded in elastomeric sheets, which are closest to conventional electronic circuits processing, make up one end of the spectrum. Furthest from industry are the more recent circuits based on intrinsically stretchable liquid metals. These show extremely promising results, however, as a technology, liquid metal is not mature enough to be adapted. Printing makes up the transition between both ends, and is also well established on an industrial level, but traditionally not linked to creating electronics. Even though a certain level of maturity was found amongst the approaches that are reviewed herein, industrial adaptation for consumer electronics remains unpredictable without a designated break-through commercial application.

  18. Fabrication Approaches to Interconnect Based Devices for Stretchable Electronics: A Review

    Directory of Open Access Journals (Sweden)

    Steven Nagels

    2018-03-01

    Full Text Available Stretchable electronics promise to naturalize the way that we are surrounded by and interact with our devices. Sensors that can stretch and bend furthermore have become increasingly relevant as the technology behind them matures rapidly from lab-based workflows to industrially applicable production principles. Regardless of the specific materials used, creating stretchable conductors involves either the implementation of strain reliefs through insightful geometric patterning, the dispersion of stiff conductive filler in an elastomeric matrix, or the employment of intrinsically stretchable conductive materials. These basic principles however have spawned a myriad of materials systems wherein future application engineers need to find their way. This paper reports a literature study on the spectrum of different approaches towards stretchable electronics, discusses standardization of characteristic tests together with their reports and estimates matureness for industry. Patterned copper foils that are embedded in elastomeric sheets, which are closest to conventional electronic circuits processing, make up one end of the spectrum. Furthest from industry are the more recent circuits based on intrinsically stretchable liquid metals. These show extremely promising results, however, as a technology, liquid metal is not mature enough to be adapted. Printing makes up the transition between both ends, and is also well established on an industrial level, but traditionally not linked to creating electronics. Even though a certain level of maturity was found amongst the approaches that are reviewed herein, industrial adaptation for consumer electronics remains unpredictable without a designated break-through commercial application.

  19. Stretchable Persistent Spin Helices in GaAs Quantum Wells

    Science.gov (United States)

    Dettwiler, Florian; Fu, Jiyong; Mack, Shawn; Weigele, Pirmin J.; Egues, J. Carlos; Awschalom, David D.; Zumbühl, Dominik M.

    2017-07-01

    The Rashba and Dresselhaus spin-orbit (SO) interactions in 2D electron gases act as effective magnetic fields with momentum-dependent directions, which cause spin decay as the spins undergo arbitrary precessions about these randomly oriented SO fields due to momentum scattering. Theoretically and experimentally, it has been established that by fine-tuning the Rashba α and renormalized Dresselhaus β couplings to equal fixed strengths α =β , the total SO field becomes unidirectional, thus rendering the electron spins immune to decay due to momentum scattering. A robust persistent spin helix (PSH), i.e., a helical spin-density wave excitation with constant pitch P =2 π /Q , Q =4 m α /ℏ2, has already been experimentally realized at this singular point α =β , enhancing the spin lifetime by up to 2 orders of magnitude. Here, we employ the suppression of weak antilocalization as a sensitive detector for matched SO fields together with independent electrical control over the SO couplings via top gate voltage VT and back gate voltage VB to extract all SO couplings when combined with detailed numerical simulations. We demonstrate for the first time the gate control of the renormalized β and the continuous locking of the SO fields at α =β ; i.e., we are able to vary both α and β controllably and continuously with VT and VB, while keeping them locked at equal strengths. This makes possible a new concept: "stretchable PSHs," i.e., helical spin patterns with continuously variable pitches P over a wide parameter range. Stretching the PSH, i.e., gate controlling P while staying locked in the PSH regime, provides protection from spin decay at the symmetry point α =β , thus offering an important advantage over other methods. This protection is limited mainly by the cubic Dresselhaus term, which breaks the unidirectionality of the total SO field and causes spin decay at higher electron densities. We quantify the cubic term, and find it to be sufficiently weak so that

  20. Stretchable Persistent Spin Helices in GaAs Quantum Wells

    Directory of Open Access Journals (Sweden)

    Florian Dettwiler

    2017-07-01

    Full Text Available The Rashba and Dresselhaus spin-orbit (SO interactions in 2D electron gases act as effective magnetic fields with momentum-dependent directions, which cause spin decay as the spins undergo arbitrary precessions about these randomly oriented SO fields due to momentum scattering. Theoretically and experimentally, it has been established that by fine-tuning the Rashba α and renormalized Dresselhaus β couplings to equal fixed strengths α=β, the total SO field becomes unidirectional, thus rendering the electron spins immune to decay due to momentum scattering. A robust persistent spin helix (PSH, i.e., a helical spin-density wave excitation with constant pitch P=2π/Q, Q=4mα/ℏ^{2}, has already been experimentally realized at this singular point α=β, enhancing the spin lifetime by up to 2 orders of magnitude. Here, we employ the suppression of weak antilocalization as a sensitive detector for matched SO fields together with independent electrical control over the SO couplings via top gate voltage V_{T} and back gate voltage V_{B} to extract all SO couplings when combined with detailed numerical simulations. We demonstrate for the first time the gate control of the renormalized β and the continuous locking of the SO fields at α=β; i.e., we are able to vary both α and β controllably and continuously with V_{T} and V_{B}, while keeping them locked at equal strengths. This makes possible a new concept: “stretchable PSHs,” i.e., helical spin patterns with continuously variable pitches P over a wide parameter range. Stretching the PSH, i.e., gate controlling P while staying locked in the PSH regime, provides protection from spin decay at the symmetry point α=β, thus offering an important advantage over other methods. This protection is limited mainly by the cubic Dresselhaus term, which breaks the unidirectionality of the total SO field and causes spin decay at higher electron densities. We quantify the cubic term, and find it to be

  1. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    plasma effect have been tested up to 40 Gbit/s, and hybrid evanescent silicon lasers have been realized both in the form of distributed feed-back lasers and micro-disk lasers. For enhancing the impact of silicon photonics in future ultrafast and energy-efficient all-optical signal processing, e.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some......Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice...

  2. Soft Pneumatic Bending Actuator with Integrated Carbon Nanotube Displacement Sensor

    Directory of Open Access Journals (Sweden)

    Tim Giffney

    2016-02-01

    Full Text Available The excellent compliance and large range of motion of soft actuators controlled by fluid pressure has lead to strong interest in applying devices of this type for biomimetic and human-robot interaction applications. However, in contrast to soft actuators fabricated from stretchable silicone materials, conventional technologies for position sensing are typically rigid or bulky and are not ideal for integration into soft robotic devices. Therefore, in order to facilitate the use of soft pneumatic actuators in applications where position sensing or closed loop control is required, a soft pneumatic bending actuator with an integrated carbon nanotube position sensor has been developed. The integrated carbon nanotube position sensor presented in this work is flexible and well suited to measuring the large displacements frequently encountered in soft robotics. The sensor is produced by a simple soft lithography process during the fabrication of the soft pneumatic actuator, with a greater than 30% resistance change between the relaxed state and the maximum displacement position. It is anticipated that integrated resistive position sensors using a similar design will be useful in a wide range of soft robotic systems.

  3. Crystal growth and evaluation of silicon for VLSI and ULSI

    CERN Document Server

    Eranna, Golla

    2014-01-01

    PrefaceAbout the AuthorIntroductionSilicon: The SemiconductorWhy Single CrystalsRevolution in Integrated Circuit Fabrication Technology and the Art of Device MiniaturizationUse of Silicon as a SemiconductorSilicon Devices for Boolean ApplicationsIntegration of Silicon Devices and the Art of Circuit MiniaturizationMOS and CMOS Devices for Digital ApplicationsLSI, VLSI, and ULSI Circuits and ApplicationsSilicon for MEMS ApplicationsSummaryReferencesSilicon: The Key Material for Integrated Circuit Fabrication TechnologyIntroductionPreparation of Raw Silicon MaterialMetallurgical-Grade SiliconPuri

  4. Integration of silicon-based neural probes and micro-drive arrays for chronic recording of large populations of neurons in behaving animals.

    Science.gov (United States)

    Michon, Frédéric; Aarts, Arno; Holzhammer, Tobias; Ruther, Patrick; Borghs, Gustaaf; McNaughton, Bruce; Kloosterman, Fabian

    2016-08-01

    Understanding how neuronal assemblies underlie cognitive function is a fundamental question in system neuroscience. It poses the technical challenge to monitor the activity of populations of neurons, potentially widely separated, in relation to behaviour. In this paper, we present a new system which aims at simultaneously recording from a large population of neurons from multiple separated brain regions in freely behaving animals. The concept of the new device is to combine the benefits of two existing electrophysiological techniques, i.e. the flexibility and modularity of micro-drive arrays and the high sampling ability of electrode-dense silicon probes. Newly engineered long bendable silicon probes were integrated into a micro-drive array. The resulting device can carry up to 16 independently movable silicon probes, each carrying 16 recording sites. Populations of neurons were recorded simultaneously in multiple cortical and/or hippocampal sites in two freely behaving implanted rats. Current approaches to monitor neuronal activity either allow to flexibly record from multiple widely separated brain regions (micro-drive arrays) but with a limited sampling density or to provide denser sampling at the expense of a flexible placement in multiple brain regions (neural probes). By combining these two approaches and their benefits, we present an alternative solution for flexible and simultaneous recordings from widely distributed populations of neurons in freely behaving rats.

  5. Evaluation of silicon and polymer substrates for fabrication of integrated microfluidic microsystems for DNA extraction and amplification.

    Science.gov (United States)

    Gheorghe, M; Blionas, S; Ragoussis, J; Galvin, P

    2006-01-01

    This paper is presenting two different alternatives for the DNA extraction and amplification that will be carried out by two competitive research projects developing bioanalytical microsystems with microfluidics. The first project will develop the microfluidics part on polymer material and the other one on silicon. The polymer approach is currently under development based on a modular microfluidic architecture aimed to simplify the process of designing and building such a microsystem device. A silicon alternative is about to start and is expected to decrease packaging costs of the microsystem allowing future manufacturability of the device.

  6. Materials, Mechanics, and Patterning Techniques for Elastomer-Based Stretchable Conductors

    Directory of Open Access Journals (Sweden)

    Xiaowei Yu

    2016-12-01

    Full Text Available Stretchable electronics represent a new generation of electronics that utilize soft, deformable elastomers as the substrate or matrix instead of the traditional rigid printed circuit boards. As the most essential component of stretchable electronics, the conductors should meet the requirements for both high conductivity and the capability to maintain conductive under large deformations such as bending, twisting, stretching, and compressing. This review summarizes recent progresses in various aspects of this fascinating and challenging area, including materials for supporting elastomers and electrical conductors, unique designs and stretching mechanics, and the subtractive and additive patterning techniques. The applications are discussed along with functional devices based on these conductors. Finally, the review is concluded with the current limitations, challenges, and future directions of stretchable conductors.

  7. Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs

    Science.gov (United States)

    Park, Hyungjin; Cho, Kyoungah; Oh, Hyungon; Kim, Sangsig

    2018-05-01

    In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm2/V·s, 1 V, and 3 × 107, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.

  8. A stretchable strain sensor based on a metal nanoparticle thin film for human motion detection

    Science.gov (United States)

    Lee, Jaehwan; Kim, Sanghyeok; Lee, Jinjae; Yang, Daejong; Park, Byong Chon; Ryu, Seunghwa; Park, Inkyu

    2014-09-01

    Wearable strain sensors for human motion detection are being highlighted in various fields such as medical, entertainment and sports industry. In this paper, we propose a new type of stretchable strain sensor that can detect both tensile and compressive strains and can be fabricated by a very simple process. A silver nanoparticle (Ag NP) thin film patterned on the polydimethylsiloxane (PDMS) stamp by a single-step direct transfer process is used as the strain sensing material. The working principle is the change in the electrical resistance caused by the opening/closure of micro-cracks under mechanical deformation. The fabricated stretchable strain sensor shows highly sensitive and durable sensing performances in various tensile/compressive strains, long-term cyclic loading and relaxation tests. We demonstrate the applications of our stretchable strain sensors such as flexible pressure sensors and wearable human motion detection devices with high sensitivity, response speed and mechanical robustness.Wearable strain sensors for human motion detection are being highlighted in various fields such as medical, entertainment and sports industry. In this paper, we propose a new type of stretchable strain sensor that can detect both tensile and compressive strains and can be fabricated by a very simple process. A silver nanoparticle (Ag NP) thin film patterned on the polydimethylsiloxane (PDMS) stamp by a single-step direct transfer process is used as the strain sensing material. The working principle is the change in the electrical resistance caused by the opening/closure of micro-cracks under mechanical deformation. The fabricated stretchable strain sensor shows highly sensitive and durable sensing performances in various tensile/compressive strains, long-term cyclic loading and relaxation tests. We demonstrate the applications of our stretchable strain sensors such as flexible pressure sensors and wearable human motion detection devices with high sensitivity, response

  9. Heterogeneous Configuration of a Ag Nanowire/Polymer Composite Structure for Selectively Stretchable Transparent Electrodes.

    Science.gov (United States)

    Kim, Youngmin; Jun, Sungwoo; Ju, Byeong-Kwon; Kim, Jong-Woong

    2017-03-01

    One of the most important aspects that we need to consider in the design of intrinsically stretchable electrodes is that most electronic devices that can be formed on them are not stretchable themselves. This discrepancy can induce severe stress singularities at the interfaces between stiff devices and stretchable electrodes, leading to catastrophic device delamination when the substrate is stretched. Here, we suggest a novel solution to this challenge which involves introducing a photolithography-based rigid-island approach to fabricate the heterogeneous configuration of a silver nanowire (AgNW)/polymer composite structure. For this, we designed two new transparent polymers: a photopatternable polymer that is rigid yet flexible, and a stretchable polymer, both of which have identical acrylate functional groups. Patterning of the rigid polymer and subsequent overcoating of the soft polymer formed rigid island disks embedded in the soft polymer, resulting in a selectively stretchable transparent film. Strong covalent bonds instead of weak physical interactions between the polymers strengthened the cohesive force at the interface of the rigid/soft polymers. Inverted-layer processing with a percolated AgNW network was used to form a heterogeneous AgNW/polymer composite structure that can be used as a selectively stretchable transparent electrode. An optimized structural configuration prevented the resistance of the rigid electrode from varying up to a lateral strain of 70%. A repeated stretch/release test with 60% strain for 5000 cycles did not cause any severe damage to the structure, revealing that the fabricated structure was mechanically stable and reliable.

  10. Rapid Prototyping Human Interfaces Using Stretchable Strain Sensor

    Directory of Open Access Journals (Sweden)

    Tokiya Yamaji

    2017-01-01

    Full Text Available In the modern society with a variety of information electronic devices, human interfaces increase their importance in a boundary of a human and a device. In general, the human is required to get used to the device. Even if the device is designed as a universal device or a high-usability device, the device is not suitable for all users. The usability of the device depends on the individual user. Therefore, personalized and customized human interfaces are effective for the user. To create customized interfaces, we propose rapid prototyping human interfaces using stretchable strain sensors. The human interfaces comprise parts formed by a three-dimensional printer and the four strain sensors. The three-dimensional printer easily makes customized human interfaces. The outputs of the interface are calculated based on the sensor’s lengths. Experiments evaluate three human interfaces: a sheet-shaped interface, a sliding lever interface, and a tilting lever interface. We confirm that the three human interfaces obtain input operations with a high accuracy.

  11. Experimental Evaluation of Incorporating Digital and Analog Integrated Circuit Die on a Common Substrate Utilizing Silicon-Hybrid Wafer-Scale Integration Technology

    Science.gov (United States)

    1992-03-01

    an uncoated optical alignment flat surface ... ............. . 5-4 5.2. Profilometer measurement of a polished Teflon coating on the optical...as interlevel dielectrics. The most common examples are: silicon dioxide, silicon nitride, spin- on glass (SOG), benzocyclobutene ( BCB ), and the...Glass 3.0 0.2-0.5 - 0.9 BCB 2.75 2.5 30-60 0.2-0.3 Polyimide 3.4 3 5-60 0.5-1.5 the area of vias tend to absorb moisture which adversely affects metal

  12. A stretchable nanowire UV-Vis-NIR photodetector with high performance.

    Science.gov (United States)

    Yoo, Jewon; Jeong, Sanghwa; Kim, Sungjee; Je, Jung Ho

    2015-03-11

    A simple direct-writing technique can be used to fabricate a stretchable UV-vis-NIR nanowire photodetector (NWPD) consisting of PbS quantum dot (QD)-poly(3-hexylthiopehene) (P3HT) hybrid NWs. The hybrid NWPD shows superior sensitivity and response speed in the UV-vis to NIR range. The stretchable UV-vis-NIR NWPD shows a nearly identical photoresponse under extreme (up to 100%) and repeated (up to 100 cycles) stretching conditions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Dynamic Silicon Nanophotonics

    Science.gov (United States)

    2013-07-31

    sensitive to fabrication imperfections and small temperature changes, therefore they are challenging to integrate into high yield mass production ... Cocoa Beach, Florida, September 2012. 15. Ali Wanis Elshaari, “Photon Manipulation in Silicon Nanophotonic Circuits,” Ph.D. Dissertation, Rochester...1.5-micron Light using Silicon Nanocrystals,” 2012 IEEE Avionics, Fiber Optics and Photonics Conference (AVFOP 2012), ThB3, Cocoa Beach, Florida

  14. Competition between deformability and charge transport in semiconducting polymers for flexible and stretchable electronics

    Energy Technology Data Exchange (ETDEWEB)

    Printz, Adam D.; Lipomi, Darren J., E-mail: dlipomi@ucsd.edu [Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448 (United States)

    2016-06-15

    The primary goal of the field concerned with organic semiconductors is to produce devices with performance approaching that of silicon electronics, but with the deformability—flexibility and stretchability—of conventional plastics. However, an inherent competition between deformability and charge transport has long been observed in these materials, and achieving the extreme (or even moderate) deformability implied by the word “plastic” concurrently with high charge transport may be elusive. This competition arises because the properties needed for high carrier mobilities—e.g., rigid chains in π-conjugated polymers and high degrees of crystallinity in the solid state—are antithetical to deformability. On the device scale, this competition can lead to low-performance yet mechanically robust devices, or high-performance devices that fail catastrophically (e.g., cracking, cohesive failure, and delamination) under strain. There are, however, some observations that contradict the notion of the mutual exclusivity of electronic and mechanical performances. These observations suggest that this problem may not be a fundamental trade-off, but rather an inconvenience that may be negotiated by a logical selection of materials and processing conditions. For example, the selection of the poly(3-alkylthiophene) with a critical side-chain length—poly(3-heptylthiophene) (n = 7)—marries the high deformability of poly(3-octylthiophene) (n = 8) with the high electronic performance (as manifested in photovoltaic efficiency) of poly(3-hexylthiophene) (n = 6). This review explores the relationship between deformability and charge transport in organic semiconductors. The principal conclusions are that reducing the competition between these two parameters is in fact possible, with two demonstrated routes being: (1) incorporation of softer, insulating material into a stiffer, semiconducting material and (2) increasing disorder in a highly ordered film, but not

  15. Polar and Nonpolar Gallium Nitride and Zinc Oxide based thin film heterostructures Integrated with Sapphire and Silicon

    Science.gov (United States)

    Gupta, Pranav

    This dissertation work explores the understanding of the relaxation and integration of polar and non-polar of GaN and ZnO thin films with Sapphire and silicon substrates. Strain management and epitaxial analysis has been performed on wurtzitic GaN(0001) thin films grown on c-Sapphire and wurtzitic non-polar a-plane GaN(11-20) thin films grown on r-plane Sapphire (10-12) by remote plasma atomic nitrogen source assisted UHV Pulsed Laser Deposition process. It has been established that high-quality 2-dimensional c-axis GaN(0001) nucleation layers can be grown on c-Sapphire by PLD process at growth temperatures as low as ˜650°C. Whereas the c-axis GaN on c-sapphire has biaxially negative misfit, the crystalline anisotropy of the a-plane GaN films on r-Sapphire results in compressive and tensile misfits in the two major orthogonal directions. The measured strains have been analyzed in detail by X-ray, Raman spectroscopy and TEM. Strain relaxation in GaN(0001)/Sapphire thin film heterostructure has been explained by the principle of domain matched epitaxial growth in large planar misfit system and has been demonstrated by TEM study. An attempt has been made to qualitatively understand the minimization of free energy of the system from the strain perspective. Analysis has been presented to quantify the strain components responsible for the compressive strain observed in the GaN(0001) thin films on c-axis Sapphire substrates. It was also observed that gallium rich deposition conditions in PLD process lead to smoother nucleation layers because of higher ad-atom mobility of gallium. We demonstrate near strain relaxed epitaxial (0001) GaN thin films grown on (111) Si substrates using TiN as intermediate buffer layer by remote nitrogen plasma assisted UHV pulsed laser deposition (PLD). Because of large misfits between the TiN/GaN and TiN/Si systems the TIN buffer layer growth occurs via nucleation of interfacial dislocations under domain matching epitaxy paradigm. X-ray and

  16. Design of a High-Performance Micro Integrated Surface Plasmon Resonance Sensor Based on Silicon-On-Insulator Rib Waveguide Array

    Directory of Open Access Journals (Sweden)

    Dengpeng Yuan

    2015-07-01

    Full Text Available Based on silicon-on-insulator (SOI rib waveguide with large cross-section, a micro integrated surface plasmon resonance (SPR biochemical sensor platform is proposed. SPR is excited at the deeply etched facet of the bend waveguide by the guiding mode and a bimetallic configuration is employed. With the advantages of SOI rib waveguide and the silicon microfabrication technology, an array of the SPR sensors can be composed to implement wavelength interrogation of the sensors’ output signal, so the spectrometer or other bulky and expensive equipment are not necessary, which enables the SPR sensor to realize the miniaturization and integration of the entire sensing system. The performances of the SPR sensor element are verified by using the two-dimensional finite-different time-domain method. The parameters of the sensor element and the array are optimized for the achievement of high performance for biochemical sensing application. As a typical example, a single bimetallic SPR sensor with 3 nm Au over 32 nm Al possesses a high sensitivity of 3.968 × 104 nm/RIU, a detection-accuracy of 14.7 μm−1. For a uniparted SPR sensor, it can achieve a detection limit of 5.04 × 10−7 RIU. With the relative power measurement accuracy of 0.01 dB, the refractive index variation of 1.14 × 10−5 RIU can be detected by the SPR sensor array.

  17. Hydrogenated amorphous silicon photonics

    Science.gov (United States)

    Narayanan, Karthik

    2011-12-01

    Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it is not clear how silicon photonics will be integrated into CMOS chips, particularly microprocessors. The issue of integrating photonic circuits into electronic IC fabrication processes to achieve maximum flexibility and minimum complexity and cost is an important one. In order to minimize usage of chip real estate, it will be advantageous to integrate in three-dimensions. Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising material for the 3-D integration of silicon photonics for on-chip optical interconnects. In addition, a-Si:H film can be deposited using CMOS compatible low temperature plasma-enhanced chemical vapor deposition (PECVD) process at any point in the fabrication process allowing maximum flexibility and minimal complexity. In this thesis, we demonstrate a-Si:H as a high performance alternate platform to crystalline silicon, enabling backend integration of optical interconnects in a hybrid photonic-electronic network-on-chip architecture. High quality passive devices are fabricated on a low-loss a-Si:H platform enabling wavelength division multiplexing schemes. We demonstrate a broadband all-optical modulation scheme based on free-carrier absorption effect, which can enable compact electro-optic modulators in a-Si:H. Furthermore, we comprehensively characterize the optical nonlinearities in a-Si:H and observe that a-Si:H exhibits enhanced nonlinearities as compared to crystalline silicon. Based on the enhanced nonlinearities, we demonstrate low-power four-wave mixing in a-Si:H waveguides enabling high speed all-optical devices in an a-Si:H platform. Finally, we demonstrate a novel data encoding scheme using thermal and all-optical tuning of silicon waveguides, increasing the spectral efficiency in an interconnect link.

  18. The role of pulse time Toff on porous silicon as template for Au nanoparticles by using the integrated electrochemical technique

    International Nuclear Information System (INIS)

    Amran, T.S.T.; Hashim, M.R.; Ali, N.K.; Yazid, H.; Adnan, R.

    2012-01-01

    Gold nanoparticles (AuNPs) having variety of sizes and shape were prepared using the template synthesis approach. Porous silicon (PSi) was fabricated using the pulsed electrochemical anodization method at different pause times, T off as template for gold deposition. Choosing suitable pulse parameter produces PSi with higher porosity and smaller crystallite size. SEM showed that the variation of T off affects the pores formation and the growth of gold nanoparticles while EDX suggested the presence of Au inside the pores structure. Photoluminescence spectra showed emission enhancement and a blue shifted relative to porous silicon before deposited with AuNPs. XRD shows a high degree crystallinity of the samples and the presence of cubic gold with crystalline sizes was around 42 nm.

  19. Design and fabrication of auxetic stretchable force sensor for hand rehabilitation

    International Nuclear Information System (INIS)

    Ko, Junghyuk; Bhullar, Sukhwinder; Cho, Yonghyun; Byung-Guk Jun, Martin; Lee, Patrick C

    2015-01-01

    Using a melt electrospinning technique, stretchable force sensors were designed for use in an application of hand rehabilitation. The main purpose of this study was to verify that the use of auxetic sensors improved hand rehabilitation practices when compared to their absence. For this study, novel stretchable poly (ϵ-caprolactone) (PCL) force sensors were fabricated into the following formations: auxetic microfiber sheets (AMSs), auxetic solid sheets (ASSs), microfiber sheets (MSs), and solid sheets (SSs). A femtosecond laser device was used to make an auxetic structure in the MSs and SSs. Subsequently, these sensors were coated with gold particles to make them conductive for the electrical current resistance assays. Through the cycles of applied stress and strain, auxetic structures were able to retain their original shape once these forces have been dissipated. This stretchable sensor could potentially measure applied external loads, resistance, and strain and could also be attachable to a desired substrate. In order to verify the workability and practicality of our designed sensors, we have attempted to use the sensors on a human hand. The AMS sensor had the highest sensitivity on measuring force and resistance among the four types of sensors. To our knowledge, this is the first study to form a stretchable force sensor using a melt electrospinning technique. (paper)

  20. Design and fabrication of auxetic stretchable force sensor for hand rehabilitation

    Science.gov (United States)

    Ko, Junghyuk; Bhullar, Sukhwinder; Cho, Yonghyun; Lee, Patrick C.; Byung-Guk Jun, Martin

    2015-07-01

    Using a melt electrospinning technique, stretchable force sensors were designed for use in an application of hand rehabilitation. The main purpose of this study was to verify that the use of auxetic sensors improved hand rehabilitation practices when compared to their absence. For this study, novel stretchable poly (ɛ-caprolactone) (PCL) force sensors were fabricated into the following formations: auxetic microfiber sheets (AMSs), auxetic solid sheets (ASSs), microfiber sheets (MSs), and solid sheets (SSs). A femtosecond laser device was used to make an auxetic structure in the MSs and SSs. Subsequently, these sensors were coated with gold particles to make them conductive for the electrical current resistance assays. Through the cycles of applied stress and strain, auxetic structures were able to retain their original shape once these forces have been dissipated. This stretchable sensor could potentially measure applied external loads, resistance, and strain and could also be attachable to a desired substrate. In order to verify the workability and practicality of our designed sensors, we have attempted to use the sensors on a human hand. The AMS sensor had the highest sensitivity on measuring force and resistance among the four types of sensors. To our knowledge, this is the first study to form a stretchable force sensor using a melt electrospinning technique.

  1. A Solution-Processable, Omnidirectionally Stretchable, and High-Pressure-Sensitive Piezoresistive Device.

    Science.gov (United States)

    Roh, Eun; Lee, Han-Byeol; Kim, Do-Il; Lee, Nae-Eung

    2017-11-01

    The development of omnidirectionally stretchable pressure sensors with high performance without stretching-induced interference has been hampered by many challenges. Herein, an omnidirectionally stretchable piezoresistive pressure-sensing device is demonstrated by combining an omniaxially stretchable substrate with a 3D micropattern array and solution-printing of electrode and piezoresistive materials. A unique substrate structural design and materials mean that devices that are highly sensitive are rendered, with a stable out-of-plane pressure response to both static (sensitivity of 0.5 kPa -1 and limit of detection of 28 Pa) and dynamic pressures and the minimized in-plane stretching responsiveness (a small strain gauge factor of 0.17), achieved through efficient strain absorption of the electrode and sensing materials. The device can detect human-body tremors, as well as measure the relative elastic properties of human skin. The omnidirectionally stretchable pressure sensor with a high pressure sensitivity and minimal stretch-responsiveness yields great potential to skin-attachable wearable electronics, human-machine interfaces, and soft robotics applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Three-Dimensional Highly Stretchable Conductors from Elastic Fiber Mat with Conductive Polymer Coating.

    Science.gov (United States)

    Duan, Shasha; Wang, Zhihui; Zhang, Ling; Liu, Jin; Li, Chunzhong

    2017-09-13

    The manufacture of stretchable conductors with well-reserved electrical performance under large-degree deformations via scalable processes remains of great importance. In this work, a highly stretchable 3D conductive framework consisting of a polyurethane fiber mat (PUF) and poly(3,4-ethylenedioxythiophene) (PEDOT) is reported through facile approaches, electrospinning, and in situ interfacial polymerization, which was then backfilled with poly(dimethylsiloxane) to obtain 3D conductors. The excellent stretchability of the 3D conductive network imparted the as-prepared electrode a superior mechanical durability. Moreover, the applied strains can be effectively accommodated by the arrangement and orientation of the fibers resulting in a relatively stable electrical performance with only a 20% increased resistance at 100% stretching. Meanwhile, the resistance of the conductor could remain constant during 2000 bending cycles and showed a slight increase during 100 cycles of 50% stretching. The potential in the applications of large-area stretchable electrodes was demonstrated by the construction of LED arrays with the PUF-based conductors as electrical connections.

  3. Silicon/Porous Silicon Composite Membrane for High Sensitivity Pressure Sensor

    Science.gov (United States)

    2009-07-21

    for integrating with other processes on silicon wafer. The fabrication of silicone rubber membranes for making microvalves has been reported [5...alcohol (IPA) is used along with HF to increase the wettability of the silicon surface and to remove the bubbles formed during the reaction. Aluminium ...Report for AOARD funded Project No. AOARD-074061 Title: Silicon /Porous Silicon composite membrane for high sensitivity pressure sensor PI

  4. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  5. Fabrication of curled conducting polymer microfibrous arrays via a novel electrospinning method for stretchable strain sensors

    Science.gov (United States)

    Sun, Bin; Long, Yun-Ze; Liu, Shu-Liang; Huang, Yuan-Yuan; Ma, Jie; Zhang, Hong-Di; Shen, Guozhen; Xu, Sheng

    2013-07-01

    Stretchable strain sensors based on aligned microfibrous arrays of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)-poly(vinyl pyrrolidone) (PEDOT:PSS-PVP) with curled architectures have been fabricated by a novel reciprocating-type electrospinning setup with a spinneret in straightforward simple harmonic motion. The incorporation of PEDOT:PSS into PVP is confirmed by Raman spectra, which improves the room-temperature conductivity of the composite fibers (1.6 × 10-5 S cm-1). Owing to the curled architectures of the as-spun fibrous polymer arrays, the sensors can be stretched reversibly with a linear elastic response to strain up to 4%, which is three times higher than that from electrospun nonwoven mats. In addition, the stretchable strain sensor with a high repeatability and durability has a gauge factor of about 360. These results may be helpful for the fabrication of stretchable devices which have potential applications in some fields such as soft robotics, elastic semiconductors, and elastic solar cells.Stretchable strain sensors based on aligned microfibrous arrays of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)-poly(vinyl pyrrolidone) (PEDOT:PSS-PVP) with curled architectures have been fabricated by a novel reciprocating-type electrospinning setup with a spinneret in straightforward simple harmonic motion. The incorporation of PEDOT:PSS into PVP is confirmed by Raman spectra, which improves the room-temperature conductivity of the composite fibers (1.6 × 10-5 S cm-1). Owing to the curled architectures of the as-spun fibrous polymer arrays, the sensors can be stretched reversibly with a linear elastic response to strain up to 4%, which is three times higher than that from electrospun nonwoven mats. In addition, the stretchable strain sensor with a high repeatability and durability has a gauge factor of about 360. These results may be helpful for the fabrication of stretchable devices which have potential applications in some fields such

  6. Silicon applications in photonics

    Science.gov (United States)

    Jelenski, A. M.; Gawlik, G.; Wesolowski, M.

    2005-09-01

    Silicon technology enabled the miniaturization of computers and other electronic system for information storage, transmission and transformation allowing the development of the Knowledge Based Information Society. Despite the fact that silicon roadmap indicates possibilities for further improvement, already now the speed of electrons and the bandwidth of electronic circuits are not sufficient and photons are commonly utilized for signal transmission through optical fibers and purely photonic circuits promise further improvements. However materials used for these purposes II/V semiconductor compounds, glasses make integration of optoelectronic circuits with silicon complex an expensive. Therefore research on light generation, transformation and transmission in silicon is very active and recently, due to nanotechnology some spectacular results were achieved despite the fact that mechanisms of light generation are still discussed. Three topics will be discussed. Porous silicon was actively investigated due to its relatively efficient electroluminescence enabling its use in light sources. Its index of refraction, differs considerably from the index of silicon, and this allows its utilization for Bragg mirrors, wave guides and photonic crystals. The enormous surface enables several applications on medicine and biotechnology and in particular due to the effective chemo-modulation of its refracting index the design of optical chemosensors. An effective luminescence of doped and undoped nanocrystalline silicon opened another way for the construction of silicon light sources. Optical amplification was already discovered opening perspectives for the construction of nanosilicon lasers. Luminescences was observed at red, green and blue wavelengths. The used technology of silica and ion implantation are compatible with commonly used CMOS technology. Finally the recently developed and proved idea of optically pumped silicon Raman lasers, using nonlinearity and vibrations in the

  7. Steps towards silicon optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Starovoytov, A

    1999-07-01

    This thesis addresses the issue of a potential future microelectronics technology, namely the possibility of utilising the optical properties of nanocrystalline silicon for optoelectronic circuits. The subject is subdivided into three chapters. Chapter 1 is an introduction. It formulates the oncoming problem for microelectronic development, explains the basics of Integrated Optoelectronics, introduces porous silicon as a new light-emitting material and gives a brief review of other competing light-emitting material systems currently under investigation. Examples of existing porous silicon devices are given. Chapter 2 reviews the basic physics relevant to the subject of this thesis and in-forms on the present situation in this field of research, including both experimental and theoretical knowledge gained up-to-date. The chapter provides the necessary background for correct interpretation of the results reported in Chapter 3 and for a realistic decision on the direction for future work. Chapter 3 describes my own experimental and computational results within the framework of the subject, obtained at De Montfort University. These include: one-step preparation of laterally structured porous silicon with photoluminescence and microscopy characterisation, Raman spectroscopy of porous silicon, a polarisation study of the photoluminescence from porous silicon, computer simulations of the conductivity of two-component media and of laser focused atomic deposition for nanostructure fabrication. Thus, this thesis makes a dual contribution to the chosen field: it summarises the present knowledge on the possibility of utilising optical properties of nanocrystalline silicon in silicon-based electronics, and it reports new results within the framework of the subject. The main conclusion is that due to its promising optoelectronic properties nanocrystalline silicon remains a prospective competitor for the cheapest and fastest microelectronics of the next century. (author)

  8. Two-Photon Laser-Assisted Device Alteration in Silicon Integrated Circuits (Open Access, Publisher’s Version)

    Science.gov (United States)

    2013-11-18

    2199–2207 (2003). 17. K. A. Serrels, E. Ramsay, R. J. Warburton, and D. T. Reid, “Nanoscale optical microscopy in the vectorial focusing regime,” Nat...was a proprietary 28 nm bulk-silicon test device (Vdd = 0.8 V, clock frequency = 50 MHz) containing production logic blocks. To exercise the device, a... production scan test, lasting 21 μs, was modified to engineer a race condition – as illustrated in Fig. 1. Data were launched through a data-path

  9. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  10. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  11. Materials Integration and Metamorphic Substrate Engineering from Silicon to Gallium Arsenide to Indium Phosphide for Advanced III-V/Silicon Photovoltaics

    Science.gov (United States)

    Carlin, Andrew M.

    ~10x, to a range of 1×107 cm-2, compared to current state of the art. This reduction can now enable future III-V/Si solar cells based on GaAsP metamorphic buffers in which the underlying Si substrate can participate as an active sub-cell, and such buffers have been demonstrated in this research. Second, in this same lattice constant range, novel GaP/SiGe interfaces on Si were grown and demonstrated to eliminate the small, but not negligible lattice misfit between GaP and Si, and provides a second pathway for future III-V/Si solar cell integration through subsequent metamorphic buffer growth. For the GaAs-InP range of lattice constants, multiple metamorphic buffer strategies, including those based on anion-specific quaternary GaInAsP, combinations of step and linearly-graded buffers, and buffers with multiple ternary alloys were all investigated. Micro-scale phase separation within quaternary anion-graded GaInAsP was identified as a mechanism to significantly inhibit proper lattice misfit strain relaxation, which was explained by thermodynamic arguments consistent with theoretical phase separation. This led to the creation of hybrid step and linearly graded InGaAs/InGaP metamorphic buffers through which phase separation was totally eliminated by avoiding specific compositions that were identified as sources for phase separation. These findings have enabled a realistic path for accessing the full range of bandgaps needed for future high efficiency III-V solar cells through optimized metamorphic III-V grading strategies.

  12. An integrated optic ethanol vapor sensor based on a silicon-on-insulator microring resonator coated with a porous ZnO film.

    Science.gov (United States)

    Yebo, Nebiyu A; Lommens, Petra; Hens, Zeger; Baets, Roel

    2010-05-24

    Optical structures fabricated on silicon-on-insulator technology provide a convenient platform for the implementation of highly compact, versatile and low cost devices. In this work, we demonstrate the promise of this technology for integrated low power and low cost optical gas sensing. A room temperature ethanol vapor sensor is demonstrated using a ZnO nanoparticle film as a coating on an SOI micro-ring resonator of 5 microm in radius. The local coating on the ring resonators is prepared from colloidal suspensions of ZnO nanoparticles of around 3 nm diameter. The porous nature of the coating provides a large surface area for gas adsorption. The ZnO refractive index change upon vapor adsorption shifts the microring resonance through evanescent field interaction. Ethanol vapor concentrations down to 100 ppm are detected with this sensing configuration and a detection limit below 25 ppm is estimated.

  13. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with silicon selectivity

    Science.gov (United States)

    Shoeb, Juline

    Plasma-surface interactions are very important in the fabrication of the nm-sized features of integrated circuits. Plasma processes are employed to produce high-resolution patterns in many of the thin layers of silicon integrated circuits and to remove masking layers while maintaining high selectivity. Integrated plasma processes consisting of sequential steps such as etch, clean and surface modification, are used in semiconductor industries. The surface in contact with the process plasma is exposed to the fluxes of neutrals, ions, molecules, electrons and photons. Modeling of surface reaction mechanisms requires the determination of the characterizations of fluxes (e.g. composition, magnitude, energy and angle) and development of the reaction mechanisms of the processes such as adsorption, reflection, bond breaking and etch product evolution, while reproducing the experimental results. When modeling the reaction mechanism for an entirely new material, the experimental data is often fragmentary. Therefore, fundamental principles such as bond energies and volatility of the etch products must be considered to develop the mechanism. In this thesis, results from a computational investigation of porous low-k SiCOH etching in fluorocarbon plasmas, damage during cleaning of CFx polymer etch residue in Ar/O2 and He/H2 plasmas, NH3 plasma pore sealing and low-k degradation due to water uptake, will be discussed. The plasma etching of HfO2 gate-stacks is also computationally investigated with an emphasis on the selectivity between HfO2 and Si.

  14. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  15. Flexible, Stretchable Sensors for Wearable Health Monitoring: Sensing Mechanisms, Materials, Fabrication Strategies and Features

    Science.gov (United States)

    Liu, Yan; Wang, Hai; Zhao, Wei; Qin, Hongbo; Xie, Yongqiang

    2018-01-01

    Wearable health monitoring systems have gained considerable interest in recent years owing to their tremendous promise for personal portable health watching and remote medical practices. The sensors with excellent flexibility and stretchability are crucial components that can provide health monitoring systems with the capability of continuously tracking physiological signals of human body without conspicuous uncomfortableness and invasiveness. The signals acquired by these sensors, such as body motion, heart rate, breath, skin temperature and metabolism parameter, are closely associated with personal health conditions. This review attempts to summarize the recent progress in flexible and stretchable sensors, concerning the detected health indicators, sensing mechanisms, functional materials, fabrication strategies, basic and desired features. The potential challenges and future perspectives of wearable health monitoring system are also briefly discussed. PMID:29470408

  16. Fabrication of a stretchable solid-state micro-supercapacitor array.

    Science.gov (United States)

    Kim, Daeil; Shin, Gunchul; Kang, Yu Jin; Kim, Woong; Ha, Jeong Sook

    2013-09-24

    We fabricated a stretchable micro-supercapacitor array with planar SWCNT electrodes and an ionic liquid-based triblock copolymer electrolyte. The mechanical stability of the entire supercapacitor array upon stretching was obtained by adopting strategic design concepts. First, the narrow and long serpentine metallic interconnections were encapsulated with polyimide thin film to ensure that they were within the mechanical neutral plane. Second, an array of two-dimensional planar micro-supercapacitor with SWCNT electrodes and an ion-gel-type electrolyte was made to achieve all-solid-state energy storage devices. The formed micro-supercapacitor array showed excellent performances which were stable over stretching up to 30% without any noticeable degradation. This work shows the strong potential of a stretchable micro-supercapacitor array in applications such as wearable computers, power dressing, electronic newspapers, paper-like mobile phones, and other easily collapsible gadgets.

  17. Stretchable Heater Using Ligand-Exchanged Silver Nanowire Nanocomposite for Wearable Articular Thermotherapy.

    Science.gov (United States)

    Choi, Suji; Park, Jinkyung; Hyun, Wonji; Kim, Jangwon; Kim, Jaemin; Lee, Young Bum; Song, Changyeong; Hwang, Hye Jin; Kim, Ji Hoon; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2015-06-23

    Thermal therapy is one of the most popular physiotherapies and it is particularly useful for treating joint injuries. Conventional devices adapted for thermal therapy including heat packs and wraps have often caused discomfort to their wearers because of their rigidity and heavy weight. In our study, we developed a soft, thin, and stretchable heater by using a nanocomposite of silver nanowires and a thermoplastic elastomer. A ligand exchange reaction enabled the formation of a highly conductive and homogeneous nanocomposite. By patterning the nanocomposite with serpentine-mesh structures, conformal lamination of devices on curvilinear joints and effective heat transfer even during motion were achieved. The combination of homogeneous conductive elastomer, stretchable design, and a custom-designed electronic band created a novel wearable system for long-term, continuous articular thermotherapy.

  18. Flexible, Stretchable Sensors for Wearable Health Monitoring: Sensing Mechanisms, Materials, Fabrication Strategies and Features

    Directory of Open Access Journals (Sweden)

    Yan Liu

    2018-02-01

    Full Text Available Wearable health monitoring systems have gained considerable interest in recent years owing to their tremendous promise for personal portable health watching and remote medical practices. The sensors with excellent flexibility and stretchability are crucial components that can provide health monitoring systems with the capability of continuously tracking physiological signals of human body without conspicuous uncomfortableness and invasiveness. The signals acquired by these sensors, such as body motion, heart rate, breath, skin temperature and metabolism parameter, are closely associated with personal health conditions. This review attempts to summarize the recent progress in flexible and stretchable sensors, concerning the detected health indicators, sensing mechanisms, functional materials, fabrication strategies, basic and desired features. The potential challenges and future perspectives of wearable health monitoring system are also briefly discussed.

  19. Coaxial printing method for directly writing stretchable cable as strain sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Hai-liang [College of Material Science and Engineering, Beijing University of Technology, 100124 Beijing (China); Chengdu Green Energy and Green Manufacturing Technology R& D Center, 610299 Chengdu (China); Chen, Yan-qiu, E-mail: yu.liu@vip.163.com, E-mail: cyqleaf@qq.com, E-mail: hyan@but.ac.cn; Deng, Yong-qiang; Zhang, Li-long; Lau, Woon-ming; Mei, Jun; Liu, Yu, E-mail: yu.liu@vip.163.com, E-mail: cyqleaf@qq.com, E-mail: hyan@but.ac.cn [Chengdu Green Energy and Green Manufacturing Technology R& D Center, 610299 Chengdu (China); Hong, Xiao [Chengdu Green Energy and Green Manufacturing Technology R& D Center, 610299 Chengdu (China); College of Computer Science, Sichuan University, Chengdu 610207 (China); Hui, David [Department of Mechanical Engineering, University of New Orleans, New Orleans, Louisiana 70148 (United States); Yan, Hui, E-mail: yu.liu@vip.163.com, E-mail: cyqleaf@qq.com, E-mail: hyan@but.ac.cn [College of Material Science and Engineering, Beijing University of Technology, 100124 Beijing (China)

    2016-08-22

    Through applying the liquid metal and elastomer as the core and shell materials, respectively, a coaxial printing method is being developed in this work for preparing a stretchable and conductive cable. When liquid metal alloy eutectic Gallium-Indium is embedded into the elastomer matrix under optimized control, the cable demonstrates well–posed extreme mechanic performance, under stretching for more than 350%. Under developed compression test, the fabricated cable also demonstrates the ability for recovering original properties due to the high flowability of the liquid metal and super elasticity of the elastomeric shell. The written cable presents high cycling reliability regarding its stretchability and conductivity, two properties which can be clearly predicted in theoretical calculation. This work can be further investigated as a strain sensor for monitoring motion status including frequency and amplitude of a curved object, with extensive applications in wearable devices, soft robots, electronic skins, and wireless communication.

  20. Omni-Purpose Stretchable Strain Sensor Based on a Highly Dense Nanocracking Structure for Whole-Body Motion Monitoring.

    Science.gov (United States)

    Jeon, Hyungkook; Hong, Seong Kyung; Kim, Min Seo; Cho, Seong J; Lim, Geunbae

    2017-12-06

    Here, we report an omni-purpose stretchable strain sensor (OPSS sensor) based on a nanocracking structure for monitoring whole-body motions including both joint-level and skin-level motions. By controlling and optimizing the nanocracking structure, inspired by the spider sensory system, the OPSS sensor is endowed with both high sensitivity (gauge factor ≈ 30) and a wide working range (strain up to 150%) under great linearity (R 2 = 0.9814) and fast response time (sensor has advantages of being extremely simple, patternable, integrated circuit-compatible, and reliable in terms of reproducibility. Using the OPSS sensor, we detected various human body motions including both moving of joints and subtle deforming of skin such as pulsation. As specific medical applications of the sensor, we also successfully developed a glove-type hand motion detector and a real-time Morse code communication system for patients with general paralysis. Therefore, considering the outstanding sensing performances, great advantages of the fabrication process, and successful results from a variety of practical applications, we believe that the OPSS sensor is a highly suitable strain sensor for whole-body motion monitoring and has potential for a wide range of applications, such as medical robotics and wearable healthcare devices.

  1. The Effect of adjusting PH on Stretchability and Meltability to White Brined Nabulsi Cheese

    OpenAIRE

    Ayman S. Mazahreh; Jihad M. Quasem; Ali F. Al-Shawabkeh; Ibrahim A. Afaneh; Ayman S. Mazahreh; Jihad M. Quasem; Ali F. Al-Shawabkeh; Ibrahim A. Afaneh

    2009-01-01

    Problem statement: Boiled white brined (Nabulsi cheese) is the mostly consumed in Jordan; this cheese should show meltability and high stretchability in order to fit in the production of high quality Kunafa and other popular local sweets and pastries.The most outstanding characteristic of Nabulsi cheese is the long keeping ability (more than one year) without cooling, since it is preserved in concentrated brine (up to 25%). Approach: This work was based on the hypothesis that it would be poss...

  2. Design of Hierarchically Cut Hinges for Highly Stretchable and Reconfigurable Metamaterials with Enhanced Strength.

    Science.gov (United States)

    Tang, Yichao; Lin, Gaojian; Han, Lin; Qiu, Songgang; Yang, Shu; Yin, Jie

    2015-11-25

    Applying hierarchical cuts to thin sheets of elastomer generates super-stretchable and reconfigurable metamaterials, exhibiting highly nonlinear stress-strain behaviors and tunable phononic bandgaps. The cut concept fails on brittle thin sheets due to severe stress concentration in the rotating hinges. By engineering the local hinge shapes and global hierarchical structure, cut-based reconfigurable metamaterials with largely enhanced strength are realized. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Molecular Engineering for Mechanically Resilient and Stretchable Electronic Polymers and Composites

    Science.gov (United States)

    2016-06-08

    transport in semiconducting polymers for flexible and stretchable electronics The primary goal of the field concerned with organic semiconductors is to...PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ORGANIZATION . 1. REPORT DATE (DD-MM-YYYY) 18-05-2016 2. REPORT TYPE Final 3. DATES COVERED (From - To) 01...5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) University of California, San Diego 9500 Gilman Dr. Mail Code 0448 La Jolla

  4. A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

    Science.gov (United States)

    Geng, Fei; Ding, Xiao-yun; Xu, Gao-wei; Luo, Le

    2009-10-01

    A wafer-level packaging structure with chips and passive components embedded in a silicon substrate for multichip modules (MCM) is proposed for radio frequency (RF) applications. The packaging structure consists of two layers of benzocyclobutene (BCB) films and three layers of metalized films, in which the monolithic microwave ICs (MMICs), thin film resistors, striplines and microstrip lines are integrated. The low resistivity silicon wafer with etched cavities is used as a substrate. The BCB films serve as interlayer dielectrics (ILDs). Wirebonding gold bumps are used as electric interconnections between different layers, which eliminate the need of preparing vias by costly procedures including dry etching, metal sputtering and electroplating. The chemical mechanical planarization (CMP) is used to uncover the gold bumps, and the BCB curing profile is optimized to obtain the appropriate BCB film for CMP process. In this work, the thermal, mechanical, electrical as well as RF properties of the packaging structure are investigated. The packaging thermal resistance can be controlled below 2 °C W-1. The average shear strength of the gold bumps on the BCB surface is about 70 MPa. In addition, a Kelvin test structure is fabricated for resistance testing of the vertical vias. The performances of MMIC and interconnection structure at high frequency are simulated and tested. The testing results reveal that the slight shifting of S-parameter curves of the packaged MMIC indicates perfect transmission characteristics at high frequency. For the transition structure of transmission line, the experimental results are compatible with the simulation results. The insertion loss (S21) is below 0.4 dB from 0 to 40 GHz and the return loss (S11) is less than -20 dB from 0 to 40 GHz. For a low noise amplifier (LNA) chip, the S21 shifting caused by the packaging structure is below 0.5 dB, and S11 is less than -10 dB from 8 GHz to 14 GHz.

  5. A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

    International Nuclear Information System (INIS)

    Geng, Fei; Ding, Xiao-yun; Xu, Gao-wei; Luo, Le

    2009-01-01

    A wafer-level packaging structure with chips and passive components embedded in a silicon substrate for multichip modules (MCM) is proposed for radio frequency (RF) applications. The packaging structure consists of two layers of benzocyclobutene (BCB) films and three layers of metalized films, in which the monolithic microwave ICs (MMICs), thin film resistors, striplines and microstrip lines are integrated. The low resistivity silicon wafer with etched cavities is used as a substrate. The BCB films serve as interlayer dielectrics (ILDs). Wirebonding gold bumps are used as electric interconnections between different layers, which eliminate the need of preparing vias by costly procedures including dry etching, metal sputtering and electroplating. The chemical mechanical planarization (CMP) is used to uncover the gold bumps, and the BCB curing profile is optimized to obtain the appropriate BCB film for CMP process. In this work, the thermal, mechanical, electrical as well as RF properties of the packaging structure are investigated. The packaging thermal resistance can be controlled below 2 °C W −1 . The average shear strength of the gold bumps on the BCB surface is about 70 MPa. In addition, a Kelvin test structure is fabricated for resistance testing of the vertical vias. The performances of MMIC and interconnection structure at high frequency are simulated and tested. The testing results reveal that the slight shifting of S-parameter curves of the packaged MMIC indicates perfect transmission characteristics at high frequency. For the transition structure of transmission line, the experimental results are compatible with the simulation results. The insertion loss (S 21 ) is below 0.4 dB from 0 to 40 GHz and the return loss (S 11 ) is less than −20 dB from 0 to 40 GHz. For a low noise amplifier (LNA) chip, the S 21 shifting caused by the packaging structure is below 0.5 dB, and S 11 is less than −10 dB from 8 GHz to 14 GHz

  6. Reduction of signal reflection along through silicon via channel in high-speed three-dimensional integration circuit

    Science.gov (United States)

    Liu, Xiao-Xian; Zhu, Zhang-Ming; Yang, Yin-Tang; Wang, Feng-Juan; Ding, Rui-Xue

    2014-03-01

    The through silicon via (TSV) technology has proven to be the critical enabler to realize a three-dimensional (3D) gigscale system with higher performance but shorter interconnect length. However, the received digital signal after transmission through a TSV channel, composed of redistribution layers (RDLs), TSVs, and bumps, is degraded at a high data-rate due to the non-idealities of the channel. We propose the Chebyshev multisection transformers to reduce the signal reflection of TSV channel when operating frequency goes up to 20 GHz, by which signal reflection coefficient (S11) and signal transmission coefficient (S21) are improved remarkably by 150% and 73.3%, respectively. Both the time delay and power dissipation are also reduced by 4% and 13.3%, respectively. The resistance-inductance-conductance-capacitance (RLGC) elements of the TSV channel are iterated from scattering (S)-parameters, and the proposed method of weakening the signal reflection is verified using high frequency simulator structure (HFSS) simulation software by Ansoft.

  7. Transparent and stretchable strain sensors based on metal nanowire microgrids for human motion monitoring.

    Science.gov (United States)

    Cho, Ji Hwan; Ha, Sung-Hun; Kim, Jong-Man

    2018-04-02

    Optical transparency is increasingly considered as one of the most important characteristics required in advanced stretchable strain sensors for application in body-attachable systems. In this paper, we present an entirely solution-processed fabrication route to highly transparent and stretchable resistive strain sensors based on silver nanowire microgrids (AgNW-MGs). The AgNW-MG strain sensors are readily prepared by patterning the AgNWs on a stretchable substrate into a MG geometry via a mesh-template-assisted contact-transfer printing. The MG has a unique architecture comprising the AgNWs and can be stretched to ε = 35%, with high gauge factors of ∼6.9 for ε = 0%-30% and ∼41.1 for ε = 30%-35%. The sensor also shows a high optical transmittance of 77.1% ± 1.5% (at 550 nm) and stably maintains the remarkable optical performance even at high strains. In addition, the sensor responses are found to be highly reversible with negligible hysteresis and are reliable even under repetitive stretching-releasing cycles (1000 cycles at ε = 10%). The practicality of the AgNW-MG strain sensor is confirmed by successfully monitoring a wide range of human motions in real time after firmly laminating the device onto various body parts.

  8. Highly Stretchable and Transparent Microfluidic Strain Sensors for Monitoring Human Body Motions.

    Science.gov (United States)

    Yoon, Sun Geun; Koo, Hyung-Jun; Chang, Suk Tai

    2015-12-16

    We report a new class of simple microfluidic strain sensors with high stretchability, transparency, sensitivity, and long-term stability with no considerable hysteresis and a fast response to various deformations by combining the merits of microfluidic techniques and ionic liquids. The high optical transparency of the strain sensors was achieved by introducing refractive-index matched ionic liquids into microfluidic networks or channels embedded in an elastomeric matrix. The microfluidic strain sensors offer the outstanding sensor performance under a variety of deformations induced by stretching, bending, pressing, and twisting of the microfluidic strain sensors. The principle of our microfluidic strain sensor is explained by a theoretical model based on the elastic channel deformation. In order to demonstrate its capability of practical usage, the simple-structured microfluidic strain sensors were performed onto a finger, wrist, and arm. The highly stretchable and transparent microfluidic strain sensors were successfully applied as potential platforms for distinctively monitoring a wide range of human body motions in real time. Our novel microfluidic strain sensors show great promise for making future stretchable electronic devices.

  9. Adsorbed Eutectic GaIn Structures on a Neoprene Foam for Stretchable MRI Coils.

    Science.gov (United States)

    Varga, Matija; Mehmann, Andreas; Marjanovic, Josip; Reber, Jonas; Vogt, Christian; Pruessmann, Klaas Paul; Tröster, Gerhard

    2017-11-01

    Stretchable conductors based on eutectic gallium-indium (eGaIn) alloy are patterned on a polychloroprene substrate (neoprene foam) using stencil printing. By tuning the amount of eGaIn on the neoprene substrate, different strain-sensitivity of electrical resistance is achieved. Conductors with a layer of eGaIn, which adsorbs to the walls of 60-100 µm wide neoprene cells, change their electrical resistance for 5% at 100% strain. When the amount of eGaIn is increased, the cells are filled with eGaIn and the strain-sensitivity of the electrical resistance rises to 300% at 100% strain. The developed conductors are patterned as stretchable on-body coils for receiving magnetic signals in a clinical magnetic resonance imaging setup. First images with a stretchable coil are acquired on an orange and compared to the images that are recorded using a rigid copper coil of the same size. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Transparent and stretchable strain sensors based on metal nanowire microgrids for human motion monitoring

    Science.gov (United States)

    Cho, Ji Hwan; Ha, Sung-Hun; Kim, Jong-Man

    2018-04-01

    Optical transparency is increasingly considered as one of the most important characteristics required in advanced stretchable strain sensors for application in body-attachable systems. In this paper, we present an entirely solution-processed fabrication route to highly transparent and stretchable resistive strain sensors based on silver nanowire microgrids (AgNW-MGs). The AgNW-MG strain sensors are readily prepared by patterning the AgNWs on a stretchable substrate into a MG geometry via a mesh-template-assisted contact-transfer printing. The MG has a unique architecture comprising the AgNWs and can be stretched to ɛ = 35%, with high gauge factors of ˜6.9 for ɛ = 0%-30% and ˜41.1 for ɛ = 30%-35%. The sensor also shows a high optical transmittance of 77.1% ± 1.5% (at 550 nm) and stably maintains the remarkable optical performance even at high strains. In addition, the sensor responses are found to be highly reversible with negligible hysteresis and are reliable even under repetitive stretching-releasing cycles (1000 cycles at ɛ = 10%). The practicality of the AgNW-MG strain sensor is confirmed by successfully monitoring a wide range of human motions in real time after firmly laminating the device onto various body parts.

  11. Stretchable conductors by kirigami patterning of aramid-silver nanocomposites with zero conductance gradient

    Science.gov (United States)

    Lyu, Jing; Hammig, Mark D.; Liu, Lehao; Xu, Lizhi; Chi, Hang; Uher, Ctirad; Li, Tiehu; Kotov, Nicholas A.

    2017-10-01

    Materials that are both stretchable and electrically conductive enable a broad spectrum of applications in sensing, actuating, electronics, optics and energy storage. The materials engineering concept of stretchable conductors is primarily based on combining nanowires, nanoribbons, nanoparticles, or nanocarbons with rubbery polymers to obtain composites with different abilities to transport charge and alter their nanoscale organization under strain. Although some of these composites reveal remarkably interesting multiscale reconfigurability and self-assembly phenomena, decreasing conductance with increased strain has restricted their widespread implementation. In a broader physical sense, the dependence of conductance on stress is undesirable because it requires a correlated change of electrical inputs. In this paper, we describe highly conductive and deformable sheets with a conductivity as high as 230 000 S cm-1, composed of silver nanoparticles, infiltrated within a porous aramid nanofiber (ANF) matrix. By forming a kirigami pattern, consisting of a regularized network of notches cut within the films, their ultimate tensile strain is improved from ˜2% to beyond 100%. The use of ANFs derived from well-known ultrastrong Kevlar™ fibers imparts high mechanical performance to the base composite. Importantly, the conductance of the films remains constant, even under large deformation resulting in a material with a zero conductance gradient. Unlike other nanocomposites for which strain and conductance are strongly coupled, the kirigami nanocomposite provides a pathway to demanding applications for flexible and stretchable electronics with power/voltage being unaffected by the deformation mode and temperature.

  12. Evaluation of mozzarella cheese stretchability by the ring-and-ball method.

    Science.gov (United States)

    Hicsasmaz, Z; Shippelt, L; Rizvi, S S H

    2004-07-01

    The functional quality of Mozzarella cheese is defined by its ability to melt and stretch. Currently used methods to evaluate the stretchability of Mozzarella cheese are empirical and lack control of moisture loss and temperature. The typical fork test, the imitative tensile stretch test, and the 3-pronged-hook probe tensile test all expose the test samples to ambient conditions during stretching and thus give poorly reproducible results. An objective method developed in our laboratory to evaluate stretchability of cheese is based on the principle of the Ring-and-Ball method used to measure the softening point of polymers. This technique, which controls temperature and moisture loss, was used to quantify the stretchability of Mozzarella cheese. Average stretch length varied between 4 to 9 cm between the youngest and the oldest cheese samples. The method was found to be sensitive enough to discriminate between cheeses of different ages. The results showed that the technique is reproducible and gives reliable stretch length and stretch length vs. time data, which was further used to estimate extensional viscosity of the test sample. Age-related differences were reflected in extensional viscosity that decreased from 17.4 to 13.6 kPa.s with increase in age.

  13. A Stretchable Radio-Frequency Strain Sensor Using Screen Printing Technology.

    Science.gov (United States)

    Jeong, Heijun; Lim, Sungjoon

    2016-11-02

    In this paper, we propose a stretchable radio-frequency (RF) strain sensor fabricated with screen printing technology. The RF sensor is designed using a half-wavelength patch that resonates at 3.7 GHz. The resonant frequency is determined by the length of the patch, and it therefore changes when the patch is stretched. Polydimethylsiloxane (PDMS) is used to create the substrate, because of its stretchable and screen-printable surface. In addition, Dupont PE872 (Dupont, NC, American) silver conductive ink is used to create the stretchable conductive patterns. The sensor performance is demonstrated both with full-wave simulations and with measurements carried out on a fabricated sample. When the length of the patch sensor is increased by a 7.8% stretch, the resonant frequency decreases from 3.7 GHz to 3.43 GHz, evidencing a sensitivity of 3.43 × 10⁷ Hz/%. Stretching the patch along its width does not change the resonant frequency.

  14. Mechanically Robust, Stretchable Solar Absorbers with Submicron-Thick Multilayer Sheets for Wearable and Energy Applications.

    Science.gov (United States)

    Lee, Hye Jin; Jung, Dae-Han; Kil, Tae-Hyeon; Kim, Sang Hyeon; Lee, Ki-Suk; Baek, Seung-Hyub; Choi, Won Jun; Baik, Jeong Min

    2017-05-31

    A facile method to fabricate a mechanically robust, stretchable solar absorber for stretchable heat generation and an enhanced thermoelectric generator (TEG) is demonstrated. This strategy is very simple: it uses a multilayer film made of titanium and magnesium fluoride optimized by a two-dimensional finite element frequency-domain simulation, followed by the application of mechanical stresses such as bending and stretching to the film. This process produces many microsized sheets with submicron thickness (∼500 nm), showing great adhesion to any substrates such as fabrics and polydimethylsiloxane. It exhibits a quite high light absorption of approximately 85% over a wavelength range of 0.2-4.0 μm. Under 1 sun illumination, the solar absorber on various stretchable substrates increased the substrate temperature to approximately 60 °C, irrespective of various mechanical stresses such as bending, stretching, rubbing, and even washing. The TEG with the absorber on the top surface also showed an enhanced output power of 60%, compared with that without the absorber. With an incident solar radiation flux of 38.3 kW/m 2 , the output power significantly increased to 24 mW/cm 2 because of the increase in the surface temperature to 141 °C.

  15. On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

    Science.gov (United States)

    Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

    2015-02-11

    The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

  16. Wafer-Scale Integration of Inverted Nanopyramid Arrays for Advanced Light Trapping in Crystalline Silicon Thin Film Solar Cells.

    Science.gov (United States)

    Zhou, Suqiong; Yang, Zhenhai; Gao, Pingqi; Li, Xiaofeng; Yang, Xi; Wang, Dan; He, Jian; Ying, Zhiqin; Ye, Jichun

    2016-12-01

    Crystalline silicon thin film (c-Si TF) solar cells with an active layer thickness of a few micrometers may provide a viable pathway for further sustainable development of photovoltaic technology, because of its potentials in cost reduction and high efficiency. However, the performance of such cells is largely constrained by the deteriorated light absorption of the ultrathin photoactive material. Here, we report an efficient light-trapping strategy in c-Si TFs (~20 μm in thickness) that utilizes two-dimensional (2D) arrays of inverted nanopyramid (INP) as surface texturing. Three types of INP arrays with typical periodicities of 300, 670, and 1400 nm, either on front, rear, or both surfaces of the c-Si TFs, are fabricated by scalable colloidal lithography and anisotropic wet etch technique. With the extra aid of antireflection coating, the sufficient optical absorption of 20-μm-thick c-Si with a double-sided 1400-nm INP arrays yields a photocurrent density of 39.86 mA/cm(2), which is about 76 % higher than the flat counterpart (22.63 mA/cm(2)) and is only 3 % lower than the value of Lambertian limit (41.10 mA/cm(2)). The novel surface texturing scheme with 2D INP arrays has the advantages of excellent antireflection and light-trapping capabilities, an inherent low parasitic surface area, a negligible surface damage, and a good compatibility for subsequent process steps, making it a good alternative for high-performance c-Si TF solar cells.

  17. On the integration of a microdialysis-based microTAS with calibration facility on a silicon-glass sandwich

    NARCIS (Netherlands)

    Sprenkels, A.J.; Olthuis, Wouter; Bergveld, Piet

    2000-01-01

    The integration is discussed of all parts of a microdialysis-based micro Total Analysis System or ¿TAS. In particular a microdialysis probe, a potentiometric and amperometric ion- and enzyme sensor and a calibration dosing pump have been developed separately using different precision machining

  18. Enhancement of the optical Kerr effect exhibited by an integrated configuration of silicon quantum dots and silver nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Suarez, A; Benami, A; Tamayo-Rivera L; Reyes-Esqueda, J A; Cheang-Wong, J C; Rodriguez-Fernandez, L; Crespo-Sosa, A; Oliver, A [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, D. F. 04510 (Mexico); R Rangel-Rojo [Departamento de Optica, Centro de Investigacion CientIfica y de Educacion Superior de Ensenada, Apartado Postal 2732, Ensenada, BC 22860 (Mexico); Torres-Torres, C, E-mail: rrangel@cicese.mx [Seccion de Estudios de Posgrado e Investigacion, ESIME-Z, Instituto Politecnico Nacional, D.F. 07738 (Mexico)

    2011-01-01

    We present nonlinear refractive results for three different systems produced by ion implantation: high purity silica substrates with silicon quantum dots (Si-QDs), silver nanoparticles (Ag-NPs), and one sample containing both. We used a femtosecond optical Kerr gate (OKG) with 80 fs pulses at 830 nm to investigate the magnitude and response time of their nonlinear response. The Ag-NPs samples were prepared implanting 2 MeV Ag{sup 2+} ions at different fluencies. A sample with 1x10{sup 17} ions/cm{sup 2} showed no discernible Kerr signal, while for one with 2.4x10{sup 17} ions/cm{sup 2} we measured |{chi}{sup (3)}|{sub 1111} = 5.1x10{sup -11} esu. The Si-QDs sample required irradiation with 1.5 MeV Si{sup 2+} ions, at a 2.5x10{sup 17} ions/cm{sup 2} fluence in order that the OKG results for this sample yielded a similar |{chi}{sup (3)}|{sub 1111} value. The sample containing the Si-QDs was then irradiated by 1 MeV Ag2+ ions at a 4.44 x 10{sup 16} ions/cm{sup 2} fluence and thermally treated, for which afterward we measured |{chi}{sup (3)}|{sub 1111} 1.7x10{sup -10} esu. In all cases the response time was quasi-instantaneous. These results imply that the inclusion of Ag-NPs at low fluence, enhances the nonlinearity of the composite by a factor of around three, and that this is purely electronic in nature. Pump-probe results show that there is not any nonlinear absorption present. We estimate that the confinement effect of the Si-QDs in the sample plays an important role for the excitation of the Surface Plasmon Resonance (SPR) related to the Ag-NPs. A theoretical model that describes the modification of the third order nonlinearity is also presented.

  19. Flexible and stretchable electronics for wearable health devices

    NARCIS (Netherlands)

    Brand, J. van den; Kok, M. de; Koetse, M.; Cauwe, M.; Verplancke, R.; Bossuyt, F.; Jablonski, M.; Vanfleteren, J.

    2015-01-01

    Measuring the quality of human health and well-being is one of the key growth areas in our society. Preferably, these measurements are done as unobtrusive as possible. These sensoric devices are then to be integrated directly on the human body as a patch or integrated into garments. This requires

  20. Collective optical Kerr effect exhibited by an integrated configuration of silicon quantum dots and gold nanoparticles embedded in ion-implanted silica

    International Nuclear Information System (INIS)

    Torres-Torres, C; López-Suárez, A; Oliver, A; Can-Uc, B; Rangel-Rojo, R; Tamayo-Rivera, L

    2015-01-01

    The study of the third-order optical nonlinear response exhibited by a composite containing gold nanoparticles and silicon quantum dots nucleated by ion implantation in a high-purity silica matrix is presented. The nanocomposites were explored as an integrated configuration containing two different ion-implanted distributions. The time-resolved optical Kerr gate and z-scan techniques were conducted using 80 fs pulses at a 825 nm wavelength; while the nanosecond response was investigated by a vectorial two-wave mixing method at 532 nm with 1 ns pulses. An ultrafast purely electronic nonlinearity was associated to the optical Kerr effect for the femtosecond experiments, while a thermal effect was identified as the main mechanism responsible for the nonlinear optical refraction induced by nanosecond pulses. Comparative experimental tests for examining the contribution of the Au and Si distributions to the total third-order optical response were carried out. We consider that the additional defects generated by consecutive ion irradiations in the preparation of ion-implanted samples do not notably modify the off-resonance electronic optical nonlinearities; but they do result in an important change for near-resonant nanosecond third-order optical phenomena exhibited by the closely spaced nanoparticle distributions. (paper)

  1. Design and implementation of an integrated architecture for massive parallel data treatment of analogue signals supplied by silicon detectors of very high spatial resolution

    International Nuclear Information System (INIS)

    Michel, J.

    1993-02-01

    This doctorate thesis studies an integrated architecture designed to a parallel massive treatment of analogue signals supplied by silicon detectors of very high spatial resolution. The first chapter is an introduction presenting the general outline and the triggering conditions of the spectrometer. Chapter two describes the operational structure of a microvertex detector made of Si micro-plates associated to the measuring chains. Information preconditioning is related to the pre-amplification stage, to the pile-up effects and to the reduction in the time characteristic due to the high counting rates. The chapter three describes the architecture of the analogue delay buffer, makes an analysis of the intrinsic noise and presents the operational testings and input/output control operations. The fourth chapter is devoted to the description of the analogue pulse shape processor and gives also the testings and the corresponding measurements on the circuit. Finally, the chapter five deals with the simplest modeling of the entire conditioning chain. Also, the testings and measuring procedures are here discussed. In conclusion the author presents some prospects for improving the signal-to-noise ratio by summation of the de-convoluted micro-paths. 78 refs., 78 figs., 1 annexe

  2. High-voltage (100 V ChipfilmTM single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays

    Directory of Open Access Journals (Sweden)

    J. N. Burghartz

    2009-05-01

    Full Text Available System-in-Foil (SiF is an emerging field of large-area polymer electronics that employs new materials such as conductive polymers and electrophoretic micro-capsules (E-Ink along with ultra-thin and thus flexible chips. In flexible displays, the integration of gate and source drivers onto the flexible part increases the yield and enhances the reliability of the system. In this work we propose a high-voltage ChipfilmTM lateral diffused MOS transistor (LDMOS structure on ultra-thin single-crystalline silicon chips. The fabrication process is compatible with CMOS standard processing. This LDMOS structure proves to be well suited for providing adequately large switching voltages in spite of the thin (<10 μm substrate. A breakdown voltage of more than 100 volts with drain-to-source saturation current Ids(sat≈85 μA/μm for N-LDMOS and Ids(sat≈20 μA/μm for P-LDMOS is predicted through process and device simulations.

  3. Flexible Thermoelectric Generators on Silicon Fabric

    KAUST Repository

    Sevilla, Galo T.

    2012-11-01

    In this work, the development of a Thermoelectric Generator on Flexible Silicon Fabric is explored to extend silicon electronics for flexible platforms. Low cost, easily deployable plastic based flexible electronics are of great interest for smart textile, wearable electronics and many other exciting applications. However, low thermal budget processing and fundamentally limited electron mobility hinders its potential to be competitive with well established and highly developed silicon technology. The use of silicon in flexible electronics involve expensive and abrasive materials and processes. In this work, high performance flexible thermoelectric energy harvesters are demonstrated from low cost bulk silicon (100) wafers. The fabrication of the micro- harvesters was done using existing silicon processes on silicon (100) and then peeled them off from the original substrate leaving it for reuse. Peeled off silicon has 3.6% thickness of bulk silicon reducing the thermal loss significantly and generating nearly 30% more output power than unpeeled harvesters. The demonstrated generic batch processing shows a pragmatic way of peeling off a whole silicon circuitry after conventional fabrication on bulk silicon wafers for extremely deformable high performance integrated electronics. In summary, by using a novel, low cost process, this work has successfully integrated existing and highly developed fabrication techniques to introduce a flexible energy harvester for sustainable applications.

  4. Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient

    DEFF Research Database (Denmark)

    Engstrøm, Daniel Southcott; Rupesinghe, Nalin L; Teo, Kenneth B K

    2011-01-01

    Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temper...

  5. Highly Stretchable and Transparent Supercapacitor by Ag-Au Core-Shell Nanowire Network with High Electrochemical Stability.

    Science.gov (United States)

    Lee, Habeom; Hong, Sukjoon; Lee, Jinhwan; Suh, Young Duk; Kwon, Jinhyeong; Moon, Hyunjin; Kim, Hyeonseok; Yeo, Junyeob; Ko, Seung Hwan

    2016-06-22

    Stretchable and transparent electronics have steadily attracted huge attention in wearable devices. Although Ag nanowire is the one of the most promising candidates for transparent and stretchable electronics, its electrochemical instability has forbidden its application to the development of electrochemical energy devices such as supercapacitors. Here, we introduce a highly stretchable and transparent supercapacitor based on electrochemically stable Ag-Au core-shell nanowire percolation network electrode. We developed a simple solution process to synthesize the Ag-Au core-shell nanowire with excellent electrical conductivity as well as greatly enhanced chemical and electrochemical stabilities compared to pristine Ag nanowire. The proposed core-shell nanowire-based supercapacitor still possesses fine optical transmittance and outstanding mechanical stability up to 60% strain. The Ag-Au core-shell nanowire can be a strong candidate for future wearable electrochemical energy devices.

  6. Laser-engraved carbon nanotube paper for instilling high sensitivity, high stretchability, and high linearity in strain sensors

    KAUST Repository

    Xin, Yangyang

    2017-06-29

    There is an increasing demand for strain sensors with high sensitivity and high stretchability for new applications such as robotics or wearable electronics. However, for the available technologies, the sensitivity of the sensors varies widely. These sensors are also highly nonlinear, making reliable measurement challenging. Here we introduce a new family of sensors composed of a laser-engraved carbon nanotube paper embedded in an elastomer. A roll-to-roll pressing of these sensors activates a pre-defined fragmentation process, which results in a well-controlled, fragmented microstructure. Such sensors are reproducible and durable and can attain ultrahigh sensitivity and high stretchability (with a gauge factor of over 4.2 × 10(4) at 150% strain). Moreover, they can attain high linearity from 0% to 15% and from 22% to 150% strain. They are good candidates for stretchable electronic applications that require high sensitivity and linearity at large strains.

  7. High-End Silicon PDICs

    Directory of Open Access Journals (Sweden)

    H. Zimmermann

    2008-05-01

    Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

  8. Process and device integration for silicon tunnel FETs utilizing isoelectronic trap technology to enhance the ON current

    Science.gov (United States)

    Mori, Takahiro; Asai, Hidehiro; Fukuda, Koichi; Matsukawa, Takashi

    2018-04-01

    A tunnel FET (TFET) is a candidate replacement for conventional MOSFETs to realize low-power LSI. The most significant issue with the practical application of TFETs concerns their low tunneling current. Si is an indirect-gap material with a low band-to-band tunneling probability and is not favored for the channel. However, a new technology has recently been proposed to enhance the tunneling current in Si-TFETs by utilizing isoelectronic trap (IET) technology. IET technology provides an innovative approach to realizing low-power LSI with TFETs. In this paper, state-of-the-art research on Si-TFETs with IET technology from the viewpoint of process and device integration is reviewed.

  9. Syringe siliconization process investigation and optimization.

    Science.gov (United States)

    Chan, Edwin; Hubbard, Aaron; Sane, Samir; Maa, Yuh-Fun

    2012-01-01

    The interior barrel of the prefilled syringe is often lubricated/siliconized by the syringe supplier or at the syringe filling site. Syringe siliconization is a complex process demanding automation with a high degree of precision; this information is often deemed "know-how" and is rarely published. The purpose of this study is to give a detailed account of developing and optimizing a bench-top siliconization unit with nozzle diving capabilities. This unit comprises a liquid dispense pump unit and a nozzle integrated with a Robo-cylinder linear actuator. The amount of coated silicone was determined by weighing the syringe before and after siliconization, and silicone distribution was visually inspected by glass powder coating or characterized by glide force testing. Nozzle spray range, nozzle retraction speed, silicone-coated amount, and air-to-nozzle pressure were found to be the key parameters affecting silicone distribution uniformity. Distribution uniformity is particularly sensitive to low-target silicone amount where the lack of silicone coating on the barrel near the needle side often caused the syringes to fail the glide force test or stall when using an autoinjector. In this bench-top unit we identified optimum coating conditions for a low silicone dose, which were also applicable to a pilot-scale siliconization system. The pilot unit outperformed the bench-top unit in a tighter control (standard deviation) in coated silicone amount due to the elimination of tubing flex. Tubing flex caused random nozzle mis-sprays and was prominent in the bench-top unit, while the inherent design of the pilot system substantially limited tubing flux. In summary, this bench-top coating unit demonstrated successful siliconization of the 1 mL long syringe with ∼0.2 mg of silicone oil using a spraying cycle also applicable to larger-scale siliconization. Syringe siliconization can be considered a well-established manufacturing process and has been implemented by numerous

  10. Stretchable Transparent Electrode Arrays for Simultaneous Electrical and Optical Interrogation of Neural Circuits in Vivo.

    Science.gov (United States)

    Zhang, Jing; Liu, Xiaojun; Xu, Wenjing; Luo, Wenhan; Li, Ming; Chu, Fangbing; Xu, Lu; Cao, Anyuan; Guan, Jisong; Tang, Shiming; Duan, Xiaojie

    2018-04-09

    Recent developments of transparent electrode arrays provide a unique capability for simultaneous optical and electrical interrogation of neural circuits in the brain. However, none of these electrode arrays possess the stretchability highly desired for interfacing with mechanically active neural systems, such as the brain under injury, the spinal cord, and the peripheral nervous system (PNS). Here, we report a stretchable transparent electrode array from carbon nanotube (CNT) web-like thin films that retains excellent electrochemical performance and broad-band optical transparency under stretching and is highly durable under cyclic stretching deformation. We show that the CNT electrodes record well-defined neuronal response signals with negligible light-induced artifacts from cortical surfaces under optogenetic stimulation. Simultaneous two-photon calcium imaging through the transparent CNT electrodes from cortical surfaces of GCaMP-expressing mice with epilepsy shows individual activated neurons in brain regions from which the concurrent electrical recording is taken, thus providing complementary cellular information in addition to the high-temporal-resolution electrical recording. Notably, the studies on rats show that the CNT electrodes remain operational during and after brain contusion that involves the rapid deformation of both the electrode array and brain tissue. This enables real-time, continuous electrophysiological monitoring of cortical activity under traumatic brain injury. These results highlight the potential application of the stretchable transparent CNT electrode arrays in combining electrical and optical modalities to study neural circuits, especially under mechanically active conditions, which could potentially provide important new insights into the local circuit dynamics of the spinal cord and PNS as well as the mechanism underlying traumatic injuries of the nervous system.

  11. A thermal-driven silicon micro xy-stage integrated with piezoresistive sensors for nano-positioning

    International Nuclear Information System (INIS)

    Choi, Young-Soo; Zhang, Yan; Lee, Dong-Weon

    2012-01-01

    This paper describes a novel micro xy-stage, driven by double-hot arm horizontal thermal micro-actuators integrated with a piezoresistive sensor (PS) for low-voltage operation and precise control. This micro xy-stage structure is linked with chevron beams and optimized to amplify the displacement generated by the micro-actuators that provide a pull force to the movable platform. The PS employed for in situ displacement detection and feedback control is fabricated at the base of a cold arm, which minimizes the influence of temperature change induced by electro-thermal heating. The micro xy-stage structure is defined through the use of a simple micromachining process, released by backside wet etching with a special tool. For an input power of approximately 44 mW, each chevron actuator provides about 16 µm and the total displacement of the platform is close to 32 µm. The sensitivity of the PS is better than 1 mV µm −1 , obtained from the amplified voltage output of the Wheatstone bridge circuit. The potential applications of the proposed micro xy-stage lie in micro- or nano-manipulation, as well as the positioning of ultra-small objects in nanotechnology. (paper)

  12. Efficiently-cooled plasmonic amorphous silicon solar cells integrated with a nano-coated heat-pipe plate

    Science.gov (United States)

    Zhang, Yinan; Du, Yanping; Shum, Clifford; Cai, Boyuan; Le, Nam Cao Hoai; Chen, Xi; Duck, Benjamin; Fell, Christopher; Zhu, Yonggang; Gu, Min

    2016-04-01

    Solar photovoltaics (PV) are emerging as a major alternative energy source. The cost of PV electricity depends on the efficiency of conversion of light to electricity. Despite of steady growth in the efficiency for several decades, little has been achieved to reduce the impact of real-world operating temperatures on this efficiency. Here we demonstrate a highly efficient cooling solution to the recently emerging high performance plasmonic solar cell technology by integrating an advanced nano-coated heat-pipe plate. This thermal cooling technology, efficient for both summer and winter time, demonstrates the heat transportation capability up to ten times higher than those of the metal plate and the conventional wickless heat-pipe plates. The reduction in temperature rise of the plasmonic solar cells operating under one sun condition can be as high as 46%, leading to an approximate 56% recovery in efficiency, which dramatically increases the energy yield of the plasmonic solar cells. This newly-developed, thermally-managed plasmonic solar cell device significantly extends the application scope of PV for highly efficient solar energy conversion.

  13. Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

    Science.gov (United States)

    Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

    2017-07-01

    4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

  14. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  15. Hemispherical coil electrically small antenna made by stretchable conductors printing and plastic thermoforming

    International Nuclear Information System (INIS)

    Wu, Zhigang; Jobs, Magnus; Rydberg, Anders; Hjort, Klas

    2015-01-01

    A production scalable technique is presented to make hemispherical coil antennas by using a stretchable printed silver paste conductor and plastic thermoforming. To ease the fabrication process an unbalanced feed-structure was designed for solderless mounting on conductive materials. The manufactured antenna had a resonance frequency of 2.467 GHz with a reflection coefficient of −33.8 dB. The measured and simulated radiation patterns corresponded to that of monopole structure and the measured efficiency was 40%. (technical note)

  16. Multichannel noninvasive human-machine interface via stretchable µm thick sEMG patches for robot manipulation

    Science.gov (United States)

    Zhou, Ying; Wang, Youhua; Liu, Runfeng; Xiao, Lin; Zhang, Qin; Huang, YongAn

    2018-01-01

    Epidermal electronics (e-skin) emerging in recent years offer the opportunity to noninvasively and wearably extract biosignals from human bodies. The conventional processes of e-skin based on standard microelectronic fabrication processes and a variety of transfer printing methods, nevertheless, unquestionably constrains the size of the devices, posing a serious challenge to collecting signals via skin, the largest organ in the human body. Herein we propose a multichannel noninvasive human-machine interface (HMI) using stretchable surface electromyography (sEMG) patches to realize a robot hand mimicking human gestures. Time-efficient processes are first developed to manufacture µm thick large-scale stretchable devices. With micron thickness, the stretchable µm thick sEMG patches show excellent conformability with human skin and consequently comparable electrical performance with conventional gel electrodes. Combined with the large-scale size, the multichannel noninvasive HMI via stretchable µm thick sEMG patches successfully manipulates the robot hand with eight different gestures, whose precision is as high as conventional gel electrodes array.

  17. Simple Approach to High-Performance Stretchable Heaters Based on Kirigami Patterning of Conductive Paper for Wearable Thermotherapy Applications.

    Science.gov (United States)

    Jang, Nam-Su; Kim, Kang-Hyun; Ha, Sung-Hun; Jung, Soo-Ho; Lee, Hye Moon; Kim, Jong-Man

    2017-06-14

    Recent efforts to develop stretchable resistive heaters open up the possibility for their use in wearable thermotherapy applications. Such heaters should have high electrothermal performance and stability to be used practically, and the fabrication must be simple, economic, reproducible, and scalable. Here we present a simple yet highly efficient way of producing high-performance stretchable heaters, which is based on a facile kirigami pattering (the art of cutting and folding paper) of a highly conductive paper for practical wearable thermotherapy. The resulting kirigami heater exhibits high heating performance at low voltage (>40 °C at 1.2 V) and fast thermal response (simple kirigami patterning approach enables the heater to be extremely stretchable (>400%) while stably retaining its excellent performance. Furthermore, the heater shows the uniform spatial distribution of heat over the whole heating area and is highly durable (1000 cycles at 300% strain). The heater attached to curvilinear body parts shows stable heating performance even under large motions while maintaining intimate conformal contact with the skin thanks to the high stretchability and sufficient restoring force. The usability of the heater as a wearable thermotherapy device is demonstrated by increased blood flow at the wrist during operation.

  18. Reduced graphene oxide filled poly(dimethyl siloxane) based transparent stretchable, and touch-responsive sensors

    International Nuclear Information System (INIS)

    Ponnamma, Deepalekshmi; Sadasivuni, Kishor Kumar; Cabibihan, John-John; Yoon, W. Jong; Kumar, Bijandra

    2016-01-01

    The ongoing revolution in touch panel technology and electronics demands the need for thin films, which are flexible, stretchable, conductive, and highly touch responsive. In this regard, conductive elastomer nanocomposites offer potential solutions for these stipulations; however, viability is limited to the poor dispersion of conductive nanomaterials such as graphene into the matrix. Here, we fabricated a reduced graphene oxide (rGO) and poly(dimethylsiloxane) (PDMS) elastomer based transparent and flexible conductive touch responsive film by dispersing rGO honeycombs uniformly into PDMS elastomer through an ionic liquid (IL) modification. Pursuing a simple, scalable, and safe method of solution casting, this provides a versatile and creative design of a transparent and stretchable rGO/IL-PDMS capacitive touch responsive, where rGO acts as a sensing element. This transparent film with ∼70% transmittance exhibits approximately a five times faster response in comparison to rGO/PDMS film, with negligible degradation over time. The performance of this touch screen film is expected to have applications in the emerging field of foldable electronics.

  19. Highly Stretchable and Reliable, Transparent and Conductive Entangled Graphene Mesh Networks.

    Science.gov (United States)

    Han, Jaehyun; Lee, Jun-Young; Lee, Jihye; Yeo, Jong-Souk

    2018-01-01

    A highly stretchable and reliable, transparent and conductive entangled graphene mesh network (EGMN) exhibits an interconnected percolation network, as usually shown in 1D nanowires, but with the electrical, mechanical, and thermal properties of 2D graphene. The unique combination of the 2D material properties and the network structure of wrinkled, waved, and crumpled graphene enables the EGMN to demonstrate excellent electrical reliability, mechanical durability, and thermal stability, even under harsh environmental and external conditions such as very high temperature, humidity, bending, and stretching. Specifically, after 100 000 cycles of bending with radius of 2 mm, the EGMN maintains its resistance similar to its initial value. The EGMN shows a steady monotonic response in resistance to strain cycles of 50 000 times with nearly constant gauge factors of 0.76, 1.67, and 2.55 at 10%, 40%, and 70% strains, respectively. Moreover, the EGMN shows very little change in resistance with the temperature increasing up to 1000 °C, by in situ thermal analysis with transmission electron microscopy and also by long-term stability testing at 70 °C and 70% relative humidity for 30 d. These results demonstrate that this novel entangled graphene mesh network can significantly broaden the application areas for various types of wearable and stretchable devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Reduced graphene oxide filled poly(dimethyl siloxane) based transparent stretchable, and touch-responsive sensors

    Science.gov (United States)

    Ponnamma, Deepalekshmi; Sadasivuni, Kishor Kumar; Cabibihan, John-John; Yoon, W. Jong; Kumar, Bijandra

    2016-04-01

    The ongoing revolution in touch panel technology and electronics demands the need for thin films, which are flexible, stretchable, conductive, and highly touch responsive. In this regard, conductive elastomer nanocomposites offer potential solutions for these stipulations; however, viability is limited to the poor dispersion of conductive nanomaterials such as graphene into the matrix. Here, we fabricated a reduced graphene oxide (rGO) and poly(dimethylsiloxane) (PDMS) elastomer based transparent and flexible conductive touch responsive film by dispersing rGO honeycombs uniformly into PDMS elastomer through an ionic liquid (IL) modification. Pursuing a simple, scalable, and safe method of solution casting, this provides a versatile and creative design of a transparent and stretchable rGO/IL-PDMS capacitive touch responsive, where rGO acts as a sensing element. This transparent film with ˜70% transmittance exhibits approximately a five times faster response in comparison to rGO/PDMS film, with negligible degradation over time. The performance of this touch screen film is expected to have applications in the emerging field of foldable electronics.

  1. Reduced graphene oxide filled poly(dimethyl siloxane) based transparent stretchable, and touch-responsive sensors

    Energy Technology Data Exchange (ETDEWEB)

    Ponnamma, Deepalekshmi [Center for Advanced Materials, Qatar University, P. O. Box 2713, Doha (Qatar); Sadasivuni, Kishor Kumar; Cabibihan, John-John [Mechanical and Industrial Engineering, Qatar University, P.O. Box 2713, Doha (Qatar); Yoon, W. Jong [School of Science, Technology, Engineering, and Mathematics, University of Washington, Bothell, Washington 98011 (United States); Kumar, Bijandra, E-mail: bijandra.kumar@louisville.edu [Conn Center for Renewable Energy Research, University of Louisville, Louisville, Kentucky 40292 (United States); Research and Development Centre in Pharmaceutical Science and Applied Chemistry, Poona College of Pharmacy, Bharati Vidyapeeth Deemed University Erandawane, Pune 411038 (India)

    2016-04-25

    The ongoing revolution in touch panel technology and electronics demands the need for thin films, which are flexible, stretchable, conductive, and highly touch responsive. In this regard, conductive elastomer nanocomposites offer potential solutions for these stipulations; however, viability is limited to the poor dispersion of conductive nanomaterials such as graphene into the matrix. Here, we fabricated a reduced graphene oxide (rGO) and poly(dimethylsiloxane) (PDMS) elastomer based transparent and flexible conductive touch responsive film by dispersing rGO honeycombs uniformly into PDMS elastomer through an ionic liquid (IL) modification. Pursuing a simple, scalable, and safe method of solution casting, this provides a versatile and creative design of a transparent and stretchable rGO/IL-PDMS capacitive touch responsive, where rGO acts as a sensing element. This transparent film with ∼70% transmittance exhibits approximately a five times faster response in comparison to rGO/PDMS film, with negligible degradation over time. The performance of this touch screen film is expected to have applications in the emerging field of foldable electronics.

  2. Graphene—vertically aligned carbon nanotube hybrid on PDMS as stretchable electrodes

    Science.gov (United States)

    Ding, Junjun; Fu, Shichen; Zhang, Runzhi; Boon, Eric; Lee, Woo; Fisher, Frank T.; Yang, Eui-Hyeok

    2017-11-01

    Stretchable electrodes are a critical component for flexible electronics such as displays, energy devices, and wearable sensors. Carbon nanotubes (CNTs) and graphene have been considered for flexible electrode applications, due to their mechanical strength, high carrier mobility, and excellent thermal conductivity. Vertically aligned carbon nanotubes (VACNTs) provide the possibility to serve as interconnects to graphene sheets as stretchable electrodes that could maintain high electrical conductivity under large tensile strain. In this work, a graphene oxide (GO)-VACNT hybrid on a PDMS substrate was demonstrated. Here, 50 μm long VACNTs were grown on a Si/SiO2 wafer substrate via atmospheric pressure chemical vapor deposition. VACNTs were directly transferred by delamination from the Si/SiO2 to a semi-cured PDMS substrate, ensuring strong adhesion between VACNTs and PDMS upon full curing of the PDMS. GO ink was then printed on the surface of the VACNT carpet and thermally reduced to reduced graphene oxide (rGO). The sheet resistance of the rGO-VACNT hybrid was measured under uniaxial tensile strains up to 300% applied to the substrate. Under applied strain, the rGO-VACNT hybrid maintained a sheet resistant of 386 ± 55 Ω/sq. Cyclic stretching of the rGO-VACNT hybrid was performed with up to 50 cycles at 100% maximum tensile strain, showing no increase in sheet resistance. These results demonstrate promising performance of the rGO-VACNT hybrid for flexible electronics applications.

  3. Three-dimensionally deformable, highly stretchable, permeable, durable and washable fabric circuit boards

    Science.gov (United States)

    Li, Qiao; Tao, Xiao Ming

    2014-01-01

    This paper reports fabric circuit boards (FCBs), a new type of circuit boards, that are three-dimensionally deformable, highly stretchable, durable and washable ideally for wearable electronic applications. Fabricated by using computerized knitting technologies at ambient dry conditions, the resultant knitted FCBs exhibit outstanding electrical stability with less than 1% relative resistance change up to 300% strain in unidirectional tensile test or 150% membrane strain in three-dimensional ball punch test, extraordinary fatigue life of more than 1 000 000 loading cycles at 20% maximum strain, and satisfactory washing capability up to 30 times. To the best of our knowledge, the performance of new FCBs has far exceeded those of previously reported metal-coated elastomeric films or other organic materials in terms of changes in electrical resistance, stretchability, fatigue life and washing capability as well as permeability. Theoretical analysis and numerical simulation illustrate that the structural conversion of knitted fabrics is attributed to the effective mitigation of strain in the conductive metal fibres, hence the outstanding mechanical and electrical properties. Those distinctive features make the FCBs particularly suitable for next-to-skin electronic devices. This paper has further demonstrated the application potential of the knitted FCBs in smart protective apparel for in situ measurement during ballistic impact. PMID:25383032

  4. Stretchable gold conductors embedded in PDMS and patterned by photolithography: fabrication and electromechanical characterization

    International Nuclear Information System (INIS)

    Adrega, T; Lacour, S P

    2010-01-01

    Stretchable gold conductors embedded in polydimethylsiloxane (PDMS) films were successfully prepared using standard photolithography. The minimum feature sizes patterned in the metal film and PDMS encapsulation are 10 µm and 20 µm, respectively. The micro-patterned conductors are robust to uni-axial (1D) and radial (2D) stretching with applied strains of tens of percent. The electrical response of the conductors follows a nonlinear increase with strain, and is reversible. The extensive stretchability of the conductors relies on a randomly and independently distributed network of micro-cracks (∼100 nm long) in the metal film on PDMS. The micro-cracks elongate to a few microns length both in the stretching and normal directions in 1D stretching but during 2D stretching, the micro-cracks grow and form 'dry mud' islands leaving the gold microstructure inside the islands intact. Patterning metallic thin films directly onto elastomeric substrates opens a promising route for microelectrodes and interconnects for soft and ultra-compliant MEMS and electronic devices.

  5. Printable, flexible and stretchable diamond for thermal management

    Science.gov (United States)

    Rogers, John A; Kim, Tae Ho; Choi, Won Mook; Kim, Dae Hyeong; Meitl, Matthew; Menard, Etienne; Carlisle, John

    2013-06-25

    Various heat-sinked components and methods of making heat-sinked components are disclosed where diamond in thermal contact with one or more heat-generating components are capable of dissipating heat, thereby providing thermally-regulated components. Thermally conductive diamond is provided in patterns capable of providing efficient and maximum heat transfer away from components that may be susceptible to damage by elevated temperatures. The devices and methods are used to cool flexible electronics, integrated circuits and other complex electronics that tend to generate significant heat. Also provided are methods of making printable diamond patterns that can be used in a range of devices and device components.

  6. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  7. Piezoresistive effect in top-down fabricated silicon nanowires

    DEFF Research Database (Denmark)

    Reck, Kasper; Richter, Jacob; Hansen, Ole

    2008-01-01

    resistor, each with integrated contacts for electrical 4-point measurements. We show an increase in the piezoresistive effect of 633% compared to bulk silicon. Preliminary temperature measurements indicate a larger temperature dependence of silicon nanowires, compared to bulk silicon. An increase of up...

  8. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  9. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Boeckl, John J.; Hellerstedt, Jack; Fuhrer, Michael S.; Iacopi, Francesca

    2016-07-01

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High-resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  10. Microscale Silicon Origami.

    Science.gov (United States)

    Song, Zeming; Lv, Cheng; Liang, Mengbing; Sanphuang, Varittha; Wu, Kedi; Chen, Bin; Zhao, Zhi; Bai, Jing; Wang, Xu; Volakis, John L; Wang, Liping; He, Ximin; Yao, Yu; Tongay, Sefaattin; Jiang, Hanqing

    2016-10-01

    A new methodology to create 3D origami patterns out of Si nanomembranes using pre-stretched and pre-patterned polydimethylsiloxane substrates is reported. It is shown this approach is able to mimic paper-based origami patterns. The combination of origami-based microscale 3D architectures and stretchable devices will lead to a breakthrough on reconfigurable systems. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Integrated in vitro approaches to assess the bioaccessibility and bioavailability of silicon-biofortified leafy vegetables and preliminary effects on bone.

    Science.gov (United States)

    D'Imperio, Massimiliano; Brunetti, Giacomina; Gigante, Isabella; Serio, Francesco; Santamaria, Pietro; Cardinali, Angela; Colucci, Silvia; Minervini, Fiorenza

    2017-03-01

    Food industries are increasingly oriented toward new foods to improve nutritional status and/or to combat nutritional deficiency diseases. In this context, silicon biofortification could be an innovative tool for obtaining new foods with possible positive effects on bone mineralization. In this paper, an alternative and quick in vitro approach was applied in order to evaluate the potential health-promoting effects of five silicon-biofortified leafy vegetables (tatsoi, mizuna, purslane, Swiss chard and chicory) on bone mineralization compared with a commercial silicon supplement. The silicon bioaccessibility and bioavailability of the five leafy vegetables (biofortified or not) and of the supplement were assessed by applying a protocol consisting of in vitro gastrointestinal digestion coupled with a Caco-2 cell model. Silicon bioaccessibility ranged from 0.89 to 8.18 mg/L and bioavailability ranged from 111 to 206 μg/L of Si for both vegetables and supplement. Furthermore, the bioavailable fractions were tested on a human osteoblast cell model following the expression of type 1 collagen and alkaline phosphatase. The results obtained highlighted that the bioavailable fraction of biofortified purslane and Swiss chard improved the expression of both osteoblast markers compared with the supplement and other vegetables. These results underline the potentially beneficial effect of biofortified leafy vegetables and also indicate the usefulness of in vitro approaches for selecting the best vegetable with positive bone effects for further in vivo research.

  12. Ferroelectric dielectrics integrated on silicon

    CERN Document Server

    Defay, Emmanuel

    2013-01-01

    This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterizat

  13. Silicon Valley Smart Corridor : draft evaluation strategy

    Science.gov (United States)

    2000-06-05

    This document outlines the strategy for evaluating the integrated freeway, arterial, and incident management system known as the Silicon Valley Smart Corridor (SVSC). Centered in San Jose, California, the SVSC is one of approximately 65 deployments o...

  14. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and 4-step laser scribing were researched, developed, and introduced into the production line to produce solar panels with various colors, such as purple, dark blue, light blue, silver, golden, orange, red wine, and coffee. The highest module power is 105 W and the highest visible light transmittance is near 20%.

  15. Influence of elastomeric seal plate surface chemistry on interface integrity in biofouling-prone systems: Evaluation of a hydrophobic "easy-release" silicone-epoxy coating for maintaining water seal integrity of a sliding neoprene/steel interface

    Science.gov (United States)

    Andolina, Vincent L.

    Attenuated Internal Reflection (MAIR-IR) and Microscopic Infrared Spectroscopy for organic surface compositional details, light microscopy for wear area quantification, and profilometry for surface roughness estimation and wear depth quantification. Pin-on-disc dynamic Coefficient of Friction (CoF) measurements provided data relevant to forecasts of seal integrity in dry, wet and biofouling-influenced sliding contact. Actual wear of neoprene seal material against uncoated and coated steel surfaces, wet and dry, was monitored after both rotary and linear cyclic wear testing, demonstrating significant reductions in elastomer wear areas and depths (and resultant volumes) when the coating was present. Coating the steel eliminated a 270% increase in neoprene surface area wear and an 11-fold increase in seal abrasive volume loss associated with underwater rusting in rotary experiments. Linear testing results confirm coating efficacy by reducing wear area in both loading regimes by about half. No coating delamination was observed, apparently due to a differential distribution of silicone and epoxy ingredients at the air-exposed vs. steel-bonded interfaces demonstrated by IR and EDS methods. Frictional testing revealed higher Coefficients of Friction (CoF) associated with the low-speed sliding of Neoprene over coated rather than uncoated steel surfaces in a wet environment, indicating better potential seal adhesion between the hydrophobic elastomer and coating than between the elastomer and intrinsically hydrophilic uncoated steel. When zebra mussel biofouling debris was present in the articulating joints, CoF was reduced as a result of a water channel path produced between the articulating surfaces by the retained biological matter. Easier release of the biofouling from the low-CST coated surfaces restored the seal integrity more rapidly with further water rinsing. Rapid sliding diminished these biofouling-related differences, but revealed a significant advantage in reducing the Co

  16. Silicon photonics III systems and applications

    CERN Document Server

    Lockwood, David

    2016-01-01

    This book is volume III of a series of books on silicon photonics. It reports on the development of fully integrated systems where many different photonics component are integrated together to build complex circuits. This is the demonstration of the fully potentiality of silicon photonics. It contains a number of chapters written by engineers and scientists of the main companies, research centers and universities active in the field. It can be of use for all those persons interested to know the potentialities and the recent applications of silicon photonics both in microelectronics, telecommunication and consumer electronics market.

  17. Ultra-Stretchable Ionic Nanocomposites: From Dynamic Bonding to Multi-Responsive Behavior

    KAUST Repository

    Odent, Jeremy

    2017-06-12

    Although multi-responsive materials have the potential to revolutionize a wide spectrum of technologies, the design of systems that combine a range of responses to a variety of different external changes without the associated property trade-offs has remained elusive. We herein demonstrate a new family of multi-responsive nanocomposites that leverage the dynamic and reversible nature of electrostatic interactions present in ionic systems with the reinforcement ability of nanoparticles in nanocomposites. This new design leads to a unique property profile that combines simultaneous improvements in stiffness, toughness and extensibility. In addition to their exceptional stretchability, the new, ionic nanocomposites exhibit unique strain-dependent behavior (i.e. the deformation increases with increasing strain rate) and return to normal state after deformation including shape-memory and scratching recovery.

  18. A simple method for fabrication of filler-free stretchable polydimethylsiloxane surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Bacharouche, Jalal; Kunemann, Philippe; Fioux, Philippe; Vallat, Marie-France; Lalevée, Jacques [Institut de Sciences des Materiaux de Mulhouse, IS2M – C.N.R.S., LRC 7228 – UHA, 15, Rue Jean Starcky, 68057 Mulhouse Cedex (France); Hemmerlé, Joseph [Institut National de la Sante et de la Recherche Medicale, I.N.S.E.R.M. – Unite 595, 11, Rue Humann, 67085 Strasbourg Cedex (France); Roucoules, Vincent, E-mail: Vincent.Roucoules@uha.fr [Institut de Sciences des Materiaux de Mulhouse, IS2M – C.N.R.S., LRC 7228 – UHA, 15, Rue Jean Starcky, 68057 Mulhouse Cedex (France)

    2013-04-01

    We propose a simple method to elaborate a filler-free stretchable PDMS surface strong enough to resist to successive elongation/retraction cycles even at high degree of stretching. It consists in creating free radicals on a filler-containing PDMS surface by argon plasma exposure and reacting them with a filler-free PDMS resin during the crosslinking step. Changes of physical and chemical properties upon plasma modification are monitored by FTIR and XPS spectroscopies, contact angle measurements and atomic force microscopy. Electron spin resonance (ESR) is used to identify the nature of radicals involved in interfacial bonding. Although a brittle silica-like layer is created on the filler-containing PDMS surface after plasma treatment, an increase in the PDMS/PDMS interfacial strength is observed and a high interfacial resistance has been found under elongation/retraction (stretching/relaxation) cycles.

  19. Synthesis of Stretchable Gold Films with Nanocracks: Stretched up to 120% Strain while Maintaining Conductivity

    Science.gov (United States)

    Yu, Mei; Wang, Chong; Yang, Cancan; Yu, Zhe

    2017-11-01

    With the great deformability of stretch, compression, bend and twisting, while preserving electrical property, metal films on elastomeric substrates have many applications for serving as bioelectrical interfaces. However, at present, most polymer-supported thin metal films reported rupture at small elongations (films were fabricated on PDMS substrates by a novel micro-processing technology. The as deposited films can be stretched by a maximum 120% strain while maintaining their electrical conductivity. Electrical characteristics of the gold films under single-cycle and multi-cycle stretch deformations are investigated in this work. SEM images imply that the gold films are under the structure of nanocracks. The mechanisms of the stretchability of the gold films can be explained by the nanocraks, which uniformly distribute with random orientation in the films.

  20. Electroless Deposition Metals on Poly(dimethylsiloxane) with Strong Adhesion As Flexible and Stretchable Conductive Materials.

    Science.gov (United States)

    Zhang, Fu-Tao; Xu, Lu; Chen, Jia-Hui; Zhao, Bo; Fu, Xian-Zhu; Sun, Rong; Chen, Qianwang; Wong, Ching-Ping

    2018-01-17

    A new surface modification method is developed for electroless deposition of robust metal (copper, nickel, silver) layers on poly(dimethylsiloxane) (PDMS) substrate with strong adhesion. Under the synergies of the polydopamine (PDA), the plasma process enhances Ag + reduction, and a thin Ag film is capable of tightly attaching to the PDMS surface, which catalyzes electroless deposition (ELD) to form robust metal layers on the PDMS surface with strong adhesion. Subsequently, a flexible and stretchable Cu-PDMS conductor is obtained through this method, showing excellent metallic conductivity of 1.2 × 10 7 S m -1 , even at the longest stretch strain (700%). This process provides a successful strategy for obtaining good robust metal layers on PDMS and other polymer substrate surfaces with strong adhesion and conductivity.

  1. Adhesion enhancement by a dielectric barrier discharge of PDMS used for flexible and stretchable electronics

    International Nuclear Information System (INIS)

    Morent, R; Geyter, N De; Axisa, F; Smet, N de; Gengembre, L; Leersnyder, E De; Leys, C; Vanfleteren, J; Rymarczyk-Machal, M; Schacht, E; Payen, E

    2007-01-01

    Currently, there is a strong tendency to replace rigid electronic assemblies by mechanically flexible and stretchable equivalents. This emerging technology can be applied for biomedical electronics, such as implantable devices and electronics on skin. In the first step of the production process of stretchable electronics, electronic interconnections and components are encapsulated into a thin layer of polydimethylsiloxane (PDMS). Afterwards, the electronic structures are completely embedded by placing another PDMS layer on top. It is very important that the metals inside the electronic circuit do not leak out in order to obtain a highly biocompatible system. Therefore, an excellent adhesion between the 2 PDMS layers is of great importance. However, PDMS has a very low surface energy, resulting in poor adhesion properties. Therefore, in this paper, PDMS films are plasma treated with a dielectric barrier discharge (DBD) operating in air at medium pressure (5.0 kPa). Contact angle and XPS measurements reveal that plasma treatment increases the hydrophilicity of the PDMS films due to the incorporation of silanol groups at the expense of methyl groups. T-peel tests show that plasma treatment rapidly imparts adhesion enhancement, but only when both PDMS layers are plasma treated. Results also reveal that it is very important to bond the plasma-treated PDMS films immediately after treatment. In this case, an excellent adhesion is maintained several days after treatment. The ageing behaviour of the plasma-treated PDMS films is also studied in detail: contact angle measurements show that the contact angle increases during storage in air and angle-resolved XPS reveals that this hydrophobic recovery is due to the migration of low molar mass PDMS species to the surface

  2. Exploiting Stretchable Metallic Springs as Compliant Electrodes for Cylindrical Dielectric Elastomer Actuators (DEAs

    Directory of Open Access Journals (Sweden)

    Chien-Hao Liu

    2017-11-01

    Full Text Available In recent years, dielectric elastomer actuators (DEAs have been widely used in soft robots and artificial bio-medical applications. Most DEAs are composed of a thin dielectric elastomer layer sandwiched between two compliant electrodes. DEAs vary in their design to provide bending, torsional, and stretch/contraction motions under the application of high external voltages. Most compliant electrodes are made of carbon powders or thin metallic films. In situations involving large deformations or improper fabrication, the electrodes are susceptible to breakage and increased resistivity. The worst cases result in a loss of conductivity and functional failure. In this study, we developed a method by which to exploit stretchable metallic springs as compliant electrodes for cylindrical DEAs. This design was inspired by the extensibility of mechanical springs. The main advantage of this approach is the fact that the metallic spring-like compliant electrodes remain conductive and do not increase the stiffness as the tube-like DEAs elongate in the axial direction. This can be attributed to a reduction in thickness in the radial direction. The proposed cylindrical structure is composed of highly-stretchable VHB 4905 film folded within a hollow tube and then sandwiched between copper springs (inside and outside to allow for stretching and contraction in the axial direction under the application of high DC voltages. We fabricated a prototype and evaluated the mechanical and electromechanical properties of the device experimentally using a high-voltage source of 9.9 kV. This device demonstrated a non-linear increase in axial stretching with an increase in applied voltage, reaching a maximum extension of 0.63 mm (axial strain of 2.35% at applied voltage of 9.9 kV. Further miniaturization and the incorporation of compressive springs are expected to allow the implementation of the proposed method in soft micro-robots and bio-mimetic applications.

  3. Silicon Nano-Photonic Devices

    DEFF Research Database (Denmark)

    Pu, Minhao

    to microwave systems and biosensing devices. An ultra-low loss inverse taper coupler for interfacing silicon ridge waveguides and optical bers is introduced and insertion losses of less than 1 dB are achieved for both transverse-electric (TE) and transversemagnetic (TM) polarizations. Integrated...... with the couplers, a silicon ridge waveguide is utilized in nonlinear all-optical signal processing for optical time division multiplexing (OTDM) systems. Record ultra-highspeed error-free optical demultiplexing and waveform sampling are realized and demonstrated for the rst time. Microwave phase shifters and notch...

  4. High-Index Contrast Silicon Rich Silicon Nitride Optical Waveguides and Devices

    DEFF Research Database (Denmark)

    Philipp, Hugh Taylor

    2004-01-01

    This research focused on the realization of high-density integrated optical devices made with high-index contrast waveguides. The material platform used for to develop these devices was modeled after standard silicon on silicon technology. The high-index waveguide core material was silicon rich...... silicon nitride. This provided a sharp contrast with silica and made low-loss waveguide bending radii less than 25mm possible. An immediate consequence of such small bending radii is the ability to make practical ring resonator based devices with a large free spectral range. Several ring resonator based...

  5. Tin (Sn) for enhancing performance in silicon CMOS

    KAUST Repository

    Hussain, Aftab M.

    2013-10-01

    We study a group IV element: tin (Sn) by integrating it into silicon lattice, to enhance the performance of silicon CMOS. We have evaluated the electrical properties of the SiSn lattice by performing simulations using First-principle studies, followed by experimental device fabrication and characterization. We fabricated high-κ/metal gate based Metal-Oxide-Semiconductor capacitors (MOSCAPs) using SiSn as channel material to study the impact of Sn integration into silicon. © 2013 IEEE.

  6. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  7. Flexible, Stretchable, and Rechargeable Fiber-Shaped Zinc-Air Battery Based on Cross-Stacked Carbon Nanotube Sheets.

    Science.gov (United States)

    Xu, Yifan; Zhang, Ye; Guo, Ziyang; Ren, Jing; Wang, Yonggang; Peng, Huisheng

    2015-12-14

    The fabrication of flexible, stretchable and rechargeable devices with a high energy density is critical for next-generation electronics. Herein, fiber-shaped Zn-air batteries, are realized for the first time by designing aligned, cross-stacked and porous carbon nanotube sheets simultaneously that behave as a gas diffusion layer, a catalyst layer, and a current collector. The combined remarkable electronic and mechanical properties of the aligned carbon nanotube sheets endow good electrochemical properties. They display excellent discharge and charge performances at a high current density of 2 A g(-1) . They are also flexible and stretchable, which is particularly promising to power portable and wearable electronic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Strained silicon as a new electro-optic material

    DEFF Research Database (Denmark)

    Jacobsen, Rune Shim; Andersen, Karin Nordström; Borel, Peter Ingo

    2006-01-01

    functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon3. Recently, however, a continuous-wave Raman silicon laser was demonstrated4; if an effective modulator could also be realized in silicon, data...... processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top...... of a silicon waveguide, and the induced nonlinear coefficient, (2) 15 pm V-1, makes it possible to realize a silicon electro-optic modulator. The strain-induced linear electro-optic effect may be used to remove a bottleneck5 in modern computers by replacing the electronic bus with a much faster optical...

  9. The role of pulse time T{sub off} on porous silicon as template for Au nanoparticles by using the integrated electrochemical technique

    Energy Technology Data Exchange (ETDEWEB)

    Amran, T.S.T. [Nano-optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Hashim, M.R., E-mail: roslan@usm.my [Nano-optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang (Malaysia); Ali, N.K. [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Yazid, H.; Adnan, R. [School of Chemical Sciences, Universiti Sains Malaysia, 11800 Penang (Malaysia)

    2012-12-01

    Gold nanoparticles (AuNPs) having variety of sizes and shape were prepared using the template synthesis approach. Porous silicon (PSi) was fabricated using the pulsed electrochemical anodization method at different pause times, T{sub off} as template for gold deposition. Choosing suitable pulse parameter produces PSi with higher porosity and smaller crystallite size. SEM showed that the variation of T{sub off} affects the pores formation and the growth of gold nanoparticles while EDX suggested the presence of Au inside the pores structure. Photoluminescence spectra showed emission enhancement and a blue shifted relative to porous silicon before deposited with AuNPs. XRD shows a high degree crystallinity of the samples and the presence of cubic gold with crystalline sizes was around 42 nm.

  10. A Flexible, Stretchable and Shape-Adaptive Approach for Versatile Energy Conversion and Self-Powered Biomedical Monitoring

    KAUST Repository

    Yang, Po Kang

    2015-05-15

    A flexible triboelectric nanogenerator (FTENG) based on wavy-structured Kapton film and a serpentine electrode on stretchable substrates is presented. The as-fabricated FTENG is capable of harvesting ambient mechanical energy via both compressive and stretching modes. Moreover, the FTENG can be a bendable power source to work on curved surfaces; it can also be adaptively attached onto human skin for monitoring gentle body motions. © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Ag/Au/Polypyrrole Core-shell Nanowire Network for Transparent, Stretchable and Flexible Supercapacitor in Wearable Energy Devices

    OpenAIRE

    Moon, Hyunjin; Lee, Habeom; Kwon, Jinhyeong; Suh, Young Duk; Kim, Dong Kwan; Ha, Inho; Yeo, Junyeob; Hong, Sukjoon; Ko, Seung Hwan

    2017-01-01

    Transparent and stretchable energy storage devices have attracted significant interest due to their potential to be applied to biocompatible and wearable electronics. Supercapacitors that use the reversible faradaic redox reaction of conducting polymer have a higher specific capacitance as compared with electrical double-layer capacitors. Typically, the conducting polymer electrode is fabricated through direct electropolymerization on the current collector. However, no research have been cond...

  12. Developing roll-to-roll manufacturing system for flexible and stretchable electronics by direct stamping of silver nano-ink

    OpenAIRE

    Kim, Jiseok

    2014-01-01

    Direct stamping of silver nanoparticle based ink has been developed for cost-effective and process-effective manufacturing of flexible or stretchable electronic devices. Facile removal of residual layer from deposited silver nanoparticles (AgNPs) layer results in high fidelity of final silver electrode without further post-processes. Scanning electron microscopy (SEM) images and energy dispersive x-ray spectroscopic analysis have revealed residue-free transfer of microscale inter-digitated ca...

  13. High-Performance Stretchable Conductive Composite Fibers from Surface-Modified Silver Nanowires and Thermoplastic Polyurethane by Wet Spinning.

    Science.gov (United States)

    Lu, Ying; Jiang, Jianwei; Yoon, Sungho; Kim, Kyung-Shik; Kim, Jae-Hyun; Park, Sanghyuk; Kim, Sang-Ho; Piao, Longhai

    2018-01-17

    Highly stretchable and conductive fibers have attracted great interest as a fundamental building block for the next generation of textile-based electronics. Because of its high conductivity and high aspect ratio, the Ag nanowire (AgNW) has been considered one of the most promising conducting materials for the percolation network-based conductive films and composites. However, the poor dispersibility of AgNWs in hydrophobic polymers has hindered their application to stretchable conductive composite fibers. In this paper, we present a highly stretchable and conductive composite fiber from the co-spinning of surface-modified AgNWs and thermoplastic polyurethane (PU). The surface modification of AgNWs with a polyethylene glycol derivative improved the compatibility of PU and AgNWs, which allowed the NWs to disperse homogeneously in the elastomeric matrix, forming effective percolation networks and causing the composite fiber to show enhanced electrical and mechanical performance. The maximum AgNW mass fraction in the composite fiber was 75.9 wt %, and its initial electrical conductivity was as high as 14 205 S/cm. The composite fibers also exhibited superior stretchability: the maximum rupture strain of the composite fiber with 14.6 wt % AgNW was 786%, and the composite fiber was also conductive even when it was stretched up to 200%. In addition, 2-dimensional (2-D) Ag nanoplates were added to the AgNW/PU composite fibers to increase the stability of the conductive network under repeated stretching and releasing. The Ag nanoplates acted as a bridge to effectively prevent the AgNWs from slippage and greatly improved the stability of the conductive network.

  14. Silicone chain extender

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a silicone chain extender, more particularly a chain extender for silicone polymers and copolymers, to a chain extended silicone polymer or copolymer and to a functionalized chain extended silicone polymer or copolymer, to a method for the preparation thereof...

  15. Epitaxial Oxides on Silicon by Pulsed Laser Deposition

    NARCIS (Netherlands)

    Dubbink, D.

    2017-01-01

    Within the perovskite oxides a wide range of physical properties can be found, making this class of materials interesting for use in new types of microelectronic devices. The microelectronic industry is silicon based, which requires integration of these oxides on silicon. This integration should be

  16. Ag/Au/Polypyrrole Core-shell Nanowire Network for Transparent, Stretchable and Flexible Supercapacitor in Wearable Energy Devices

    Science.gov (United States)

    Moon, Hyunjin; Lee, Habeom; Kwon, Jinhyeong; Suh, Young Duk; Kim, Dong Kwan; Ha, Inho; Yeo, Junyeob; Hong, Sukjoon; Ko, Seung Hwan

    2017-02-01

    Transparent and stretchable energy storage devices have attracted significant interest due to their potential to be applied to biocompatible and wearable electronics. Supercapacitors that use the reversible faradaic redox reaction of conducting polymer have a higher specific capacitance as compared with electrical double-layer capacitors. Typically, the conducting polymer electrode is fabricated through direct electropolymerization on the current collector. However, no research have been conducted on metal nanowires as current collectors for the direct electropolymerization, even though the metal nanowire network structure has proven to be superior as a transparent, flexible, and stretchable electrode platform because the conducting polymer’s redox potential for polymerization is higher than that of widely studied metal nanowires such as silver and copper. In this study, we demonstrated a highly transparent and stretchable supercapacitor by developing Ag/Au/Polypyrrole core-shell nanowire networks as electrode by coating the surface of Ag NWs with a thin layer of gold, which provide higher redox potential than the electropolymerizable monomer. The Ag/Au/Polypyrrole core-shell nanowire networks demonstrated superior mechanical stability under various mechanical bending and stretching. In addition, proposed supercapacitors showed fine optical transmittance together with fivefold improved areal capacitance compared to pristine Ag/Au core-shell nanowire mesh-based supercapacitors.

  17. Buckling-driven self-assembly of self-similar inspired micro/nanofibers for ultra-stretchable electronics.

    Science.gov (United States)

    Bian, Jing; Ding, Yajiang; Duan, Yongqing; Wan, Xiaodong; Huang, YongAn

    2017-10-18

    Self-similar structures are capable of highly enhancing the deformability of stretchable electronics. We presented a self-assembly method based on the tunable buckling of serpentine fiber-based interconnects (FiberBIs), which are deposited using our presented helix electrohydrodynamic printing (HE-printing) technique, to fabricate self-similar structures with enhanced stretchability (up to 250%). It provides a low-cost, printing-based approach for the generation of large-scale self-similar FiberBIs. Distinct buckling behaviors and modes occur under specific conditions. To elucidate the mechanics governing this phenomenon, we present detailed experimental and theoretical studies of the buckling mechanics of serpentine microfibers on compliant substrates. Firstly, the effect of the magnitude and direction of prestrain on the buckling behavior of a fiber-on-substrate is discussed. Secondly, the critical geometry of a serpentine fiber as a key parameter for fabricating uniform self-similar fibers is also figured out. Finally, the cross-sectional geometry of the fiber as a judgment criterion for determining the in-surface or out-of-surface buckling of the fiber is established. The investigation can guide the fabrication process of large-scale self-similar structures for high-performance electronic devices with extreme stretchability.

  18. The effects of bending on the resistance of elastically stretchable metal conductors, and a comparison with stretching

    Science.gov (United States)

    Graudejus, O.; Li, T.; Cheng, J.; Keiper, N.; Ponce Wong, R. D.; Pak, A. B.; Abbas, J.

    2017-05-01

    Microcracked gold films on elastomeric substrates can function as stretchable and deformable interconnects and sensors. In response to stretch or deformation, the design would seek to minimize the change in resistance for stretchable or deformable interconnects; if used as resistive sensors, a large change in resistance would be desired. This research examines the change in resistance upon bending of a microcracked conductor and compares the results with stretching such a conductor. The resistance depends on the strain in the film, which, for bending, is a function of the bending radius and the location of the film within the structure with respect to the neutral plane. The resistance decreases when the gold conductor is under compression and increases when it is under tension. The decrease in resistance under compression is small compared to the increase in resistance under tension, marginally depending on the bending radius. In contrast, the resistance under tension significantly increases with decreasing bending radius. The mechanics model presented here offers a mechanistic understanding of these observations. These results provide guidance for the design of interconnects for flexible and stretchable electronics and for flexible sensors to monitor the magnitude and direction of bending or stretching.

  19. A photonic sintering derived Ag flake/nanoparticle-based highly sensitive stretchable strain sensor for human motion monitoring.

    Science.gov (United States)

    Kim, Inhyuk; Woo, Kyoohee; Zhong, Zhaoyang; Ko, Pyungsam; Jang, Yunseok; Jung, Minhun; Jo, Jeongdai; Kwon, Sin; Lee, Seung-Hyun; Lee, Sungwon; Youn, Hongseok; Moon, Jooho

    2018-03-21

    Recently, the demand for stretchable strain sensors used for detecting human motion is rapidly increasing. This paper proposes high-performance strain sensors based on Ag flake/Ag nanocrystal (NC) hybrid materials incorporated into a polydimethylsiloxane (PDMS) elastomer. The addition of Ag NCs into an Ag flake network enhances the electrical conductivity and sensitivity of the strain sensors. The intense localized heating of Ag flakes/NCs is induced by intense pulsed light (IPL) irradiation, to achieve efficient sintering of the Ag NCs within a second, without damaging the PDMS matrix. This leads to significant improvement in the sensor sensitivity. Our strain sensors are highly stretchable (maximum strain = 80%) and sensitive (gauge factor = 7.1) with high mechanical stability over 10 000 stretching cycles under 50% strain. For practical demonstration, the fabrication of a smart glove for detecting the motions of fingers and a sports band for measuring the applied arm strength is also presented. This study provides an effective method for fabricating elastomer-based high-performance stretchable electronics.

  20. Scalable and Facile Preparation of Highly Stretchable Electrospun PEDOT:PSS@PU Fibrous Nonwovens toward Wearable Conductive Textile Applications.

    Science.gov (United States)

    Ding, Yichun; Xu, Wenhui; Wang, Wenyu; Fong, Hao; Zhu, Zhengtao

    2017-09-06

    Flexible and stretchable conductive textiles are highly desired for potential applications in wearable electronics. This study demonstrates a scalable and facile preparation of all-organic nonwoven that is mechanically stretchable and electrically conductive. Polyurethane (PU) fibrous nonwoven is prepared via the electrospinning technique; in the following step, the electrospun PU nonwoven is dip-coated with the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). This simple method enables convenient preparation of PEDOT:PSS@PU nonwovens with initial sheet resistance in the range of 35-240 Ω/sq (i.e., the electrical conductivity in the range of 30-200 S m -1 ) by varying the number of dip-coating times. The resistance change of the PEDOT:PSS@PU nonwoven under stretch is investigated. The PEDOT:PSS@PU nonwoven is first stretched and then released repeatedly under certain strain (denoted as prestretching strain); the resistance of PEDOT:PSS@PU nonwoven becomes constant after the irreversible change for the first 10 stretch-release cycles. Thereafter, the resistance of the nonwoven does not vary appreciably under stretch as long as the strain is within the prestretching strain. Therefore, the PEDOT:PSS@PU nonwoven can be used as a stretchable conductor within the prestretching strain. Circuits using sheet and twisted yarn of the nonwovens as electric conductors are demonstrated.

  1. Integration

    DEFF Research Database (Denmark)

    Emerek, Ruth

    2004-01-01

    Bidraget diskuterer de forskellige intergrationsopfattelse i Danmark - og hvad der kan forstås ved vellykket integration......Bidraget diskuterer de forskellige intergrationsopfattelse i Danmark - og hvad der kan forstås ved vellykket integration...

  2. Basic opto-electronics on silicon for sensor applications

    NARCIS (Netherlands)

    Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  3. Basic Opto-electronics on Silicon for Sensor Applications

    NARCIS (Netherlands)

    Joppe, J.L.; Bekman, H.H.P.T.; Krijger, A.J.T. de; Lambeck, P.V.; Chalmers, J.; Holleman, J.; Ikkink, T.; Kranenburg, H. van; Zhou, M.J.

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  4. Automotive Radar Sensors in Silicon Technologies

    CERN Document Server

    Jain, Vipul

    2013-01-01

    This book presents architectures and design techniques for mm-wave automotive radar transceivers. Several fully-integrated transceivers and receivers operating at 22-29 GHz and 77-81 GHz are demonstrated in both CMOS and SiGe BiCMOS technologies. Excellent performance is achieved indicating the suitability of silicon technologies for automotive radar sensors.  This book bridges an existing gap between information available on dependable system/architecture design and circuit design.  It provides the background of the field and detailed description of recent research and development of silicon-based radar sensors.  System-level requirements and circuit topologies for radar transceivers are described in detail. Holistic approaches towards designing radar sensors are validated with several examples of highly-integrated radar ICs in silicon technologies. Circuit techniques to design millimeter-wave circuits in silicon technologies are discussed in depth.  Describes concepts and fundamentals of automotive rada...

  5. Separation of Semiconducting Carbon Nanotubes for Flexible and Stretchable Electronics Using Polymer Removable Method.

    Science.gov (United States)

    Lei, Ting; Pochorovski, Igor; Bao, Zhenan

    2017-04-18

    Electronics that are soft, conformal, and stretchable are highly desirable for wearable electronics, prosthetics, and robotics. Among the various available electronic materials, single walled carbon nanotubes (SWNTs) and their network have exhibited high mechanical flexibility and stretchability, along with comparable electrical performance to traditional rigid materials, e.g. polysilicon and metal oxides. Unfortunately, SWNTs produced en masse contain a mixture of semiconducting (s-) and metallic (m-) SWNTs, rendering them unsuitable for electronic applications. Moreover, the poor solubility of SWNTs requires the introduction of insulating surfactants to properly disperse them into individual tubes for device fabrication. Compared to other SWNT dispersion and separation methods, e.g., DNA wrapping, density gradient ultracentrifugation, and gel chromatography, polymer wrapping can selectively disperse s-SWNTs with high selectivity (>99.7%), high concentration (>0.1 mg/mL), and high yield (>20%). In addition, this method only requires simple sonication and centrifuge equipment with short processing time down to 1 h. Despite these advantages, the polymer wrapping method still faces two major issues: (i) The purified s-SWNTs usually retain a substantial amount of polymers on their surface even after thorough rinsing. The low conductivity of the residual polymers impedes the charge transport in SWNT networks. (ii) Conjugated polymers used for SWNT wrapping are expensive. Their prices ($100-1000/g) are comparable or even higher than those of SWNTs ($10-300/g). These utilized conjugated polymers represent a large portion of the overall separation cost. In this Account, we summarize recent progresses in polymer design for selective dispersion and separation of SWNTs. We focus particularly on removable and/or recyclable polymers that enable low-cost and scalable separation methods. First, different separation methods are compared to show the advantages of the polymer

  6. Nonlinear optical interactions in silicon waveguides

    Directory of Open Access Journals (Sweden)

    Kuyken B.

    2017-03-01

    Full Text Available The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator.

  7. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building -integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  8. An epitaxial ferroelectric tunnel junction on silicon.

    Science.gov (United States)

    Li, Zhipeng; Guo, Xiao; Lu, Hui-Bin; Zhang, Zaoli; Song, Dongsheng; Cheng, Shaobo; Bosman, Michel; Zhu, Jing; Dong, Zhili; Zhu, Weiguang

    2014-11-12

    Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO3 barrier layer are demonstrated. The polarization-switching-induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non-volatile memory cells on a silicon platform. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Science.gov (United States)

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  10. Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor.

    Science.gov (United States)

    Han, Jin-Woo; Rim, Taiuk; Baek, Chang-Ki; Meyyappan, M

    2015-09-30

    Gas sensors based on metal-oxide-semiconductor transistor with the polysilicon gate replaced by a gas sensitive thin film have been around for over 50 years. These are not suitable for the emerging mobile and wearable sensor platforms due to operating voltages and powers far exceeding the supply capability of batteries. Here we present a novel approach to decouple the chemically sensitive region from the conducting channel for reducing the drive voltage and increasing reliability. This chemically gated field effect transistor uses silicon nanowire for the current conduction channel with a tin oxide film on top of the nanowire serving as the gas sensitive medium. The potential change induced by the molecular adsorption and desorption allows the electrically floating tin oxide film to gate the silicon channel. As the device is designed to be normally off, the power is consumed only during the gas sensing event. This feature is attractive for the battery operated sensor and wearable electronics. In addition, the decoupling of the chemical reaction and the current conduction regions allows the gas sensitive material to be free from electrical stress, thus increasing reliability. The device shows excellent gas sensitivity to the tested analytes relative to conventional metal oxide transistors and resistive sensors.

  11. Materials and integration schemes for above-IC integrated optics

    NARCIS (Netherlands)

    Schmitz, Jurriaan; Rangarajan, B.; Kovalgin, Alexeij Y.

    2014-01-01

    A study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon

  12. The Silicon Lattice Accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Spencer, J

    2003-11-24

    Previously, the generalized luminosity L was defined and calculated for all incident channels based on an NLC e{sup +}e{sup -} design. Alternatives were then considered to improve the differing beam-beam effects in the e{sup -}e{sup -}, e{gamma} and {gamma}{gamma} channels. One example was tensor beams composed of bunchlets n{sub ijk} implemented with a laser-driven, silicon accelerator based on micromachining techniques. Problems were considered and expressions given for radiative broadening due to bunchlet manipulation near the final focus to optimize luminosity via charge enhancement, neutralization or bunch shaping. Because the results were promising, we explore fully integrated structures that include sources, optics (for both light and particles) and acceleration in a common format--an accelerator-on-chip. Acceptable materials (and wavelengths) must allow velocity synchronism between many laser and electron pulses with optimal efficiency in high radiation environments. There are obvious control and cost advantages that accrue from using silicon structures if radiation effects can be made acceptable and the structures fabricated. Tests related to deep etching, fabrication and radiation effects on candidate amorphous and crystalline materials indicate Si(1.2 < {lambda}{sub L} < 10 {micro}m) and fused c-SiO{sub 2}(0.3 < {lambda}{sub L} < 4 {micro}m) to be ideal.

  13. The reduction of keep-out zone (˜10×) by the optimized novel trench structures near the through silicon vias for the application in 3-dimensional integrated circuits

    Science.gov (United States)

    Liao, M. H.

    2013-10-01

    The trench structure is designed and used to release the process induced stress, resulted from the different material thermal expansion coefficients, in the three-dimensional integral circuits (3-DICs). The stress in the designed trench structure is measured by the atomic force microscope-Raman technique experimentally and simulated by the full process simulation model. With the help of this simulation model, the optimized trench structure near the copper-filled through silicon via (TSV) is designed and reported. The experimental data demonstrate that the compressive stress near the TSV can be reduced from 600 MPa to 150 MPa, and the corresponding keep-out zone can also be decreased ˜4 times with the designed trench structure having the depth of 10 μm and the spacing distance of 8 μm to the TSV. This work provides one potential solution to release the process induced stress for the real application of 3-DICs.

  14. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  15. In-vitro bioactivity, biocorrosion and antibacterial activity of silicon integrated hydroxyapatite/chitosan composite coating on 316 L stainless steel implants

    Energy Technology Data Exchange (ETDEWEB)

    Sutha, S.; Kavitha, K.; Karunakaran, G.; Rajendran, V., E-mail: veerajendran@gmail.com

    2013-10-15

    A simple and effective ultrasonication method was applied for the preparation of 0, 0.4, 0.8, 1.0 and 1.6 wt% silicon substituted hydroxyapatite (HAp) (SH). The Ca/P ratio of the synthesised SH nanoparticles were in the range of 1.58–1.70. Morphological changes were noticed in HAp with respect to the amount of Si from 0 to 1.6 wt%. The morphology of the particles changed from spherical shape to rod-like morphology with respect to the amount of Si which was confirmed using transmission electron microscopy. X-ray diffraction studies confirm the formation of phase pure SH nanoparticles without any secondary phase. Chitosan (CTS) blended SH nanocomposites coating on surgical grade 316 L stainless steel (316 L SS) implant was made by spin coating technique. The surface of the coated implant was characterised using scanning electron microscopy which confirms the uniform coating without cracks and pores. The increased corrosion resistance of the 1.6 wt% of SH/CTS-coated SS implant in the simulated body fluid (SBF) indicates the long-term biostability of SH composite-coated ceramics in vitro than the 0 wt% SH/CTS. The testing of SH/CTS nanocomposites with gram-positive and gram-negative bacterial strains confirms that the antibacterial ability improves with the higher substitution of Si. In addition, formation of bone-like apatite layer on the SH/CTS-coated implant in SBF was studied through SEM analysis and it confirms the ability to increase the HAp formation on the surface of 1.0 wt% SH/CTS-coated 316 L SS implant. Highlights: • Hydroxyapatite particles are prepared with various silicon concentration • Prepared composites are blended with chitosan and coated on the implant • Corrosion resistance in simulated body fluid improves its stability • Increase in silicon concentration improves the antibacterial activity • Coated plate exhibit high in-vitro bioactivity in simulated body fluid.

  16. Stretchable conducting gold films prepared with composite MWNT/PDMS substrates

    Directory of Open Access Journals (Sweden)

    M. U. Manzoor

    2015-10-01

    Full Text Available Novel stretchable conducting films were prepared by depositing gold layers onto polymer nano-composites substrates formed by in-situ crosslinking of polydimethylsiloxane (PDMS in the presence of multiwall carbon nanotubes (MWNT. The MWNT content interferes with the PDMS cure reaction giving variations in thermal degradation, solvent swelling, mechanical and electrical properties. Tensile cycling experiments were carried out on the gold-coated PDMS and nano-composite substrates SEM analysis and electrical measurements demonstrated that the crack widening and increased electrical resistance observed during strain cycling were reversible. The inclusion of 8 % MWNT into PDMS brought more micro-cracking in the gold layer yet reduced the electrical resistance of the gold-coated samples by 172X at 5 % strain, 38X at 10 % strain and 19X at 20 %. Hence, this improvement in conduction is attributed to assisted-conduction through the MWNT loaded substrate. This mechanism results in a more stable and reproducible electrical behaviour, making electrical conduction less critically dependent on defects in the gold layer.

  17. Magnetohydrodynamic Flow and Heat Transfer of Nanofluids in Stretchable Convergent/Divergent Channels

    Directory of Open Access Journals (Sweden)

    Syed Tauseef Mohyud-Din

    2015-12-01

    Full Text Available This article is dedicated to analyzing the heat transfer in the flow of water-based nanofluids in a channel with non-parallel stretchable walls. The magnetohydrodynamic (MHD nature of the flow is considered. Equations governing the flow are transformed into a system of nonlinear ordinary differential equations. The said system is solved by employing two different techniques, the variational iteration method (VIM and the Runge-Kutta-Fehlberg method (RKF. The influence of the emerging parameters on the velocity and temperature profiles is highlighted with the help of graphs coupled with comprehensive discussions. A comparison with the already existing solutions is also made, which are the special cases of the current problem. It is observed that the temperature profile decreases with an increase in the nanoparticle volume fraction. Furthermore, a magnetic field can be used to control the possible separation caused by the backflows in the case of diverging channels. The effects of parameters on the skin friction coefficient and Nusselt number are also presented using graphical aid. The nanoparticle volume fraction helps to reduce the temperature of the channel and to enhance the rate of heat transfer at the wall.

  18. Lab-on-Skin: A Review of Flexible and Stretchable Electronics for Wearable Health Monitoring.

    Science.gov (United States)

    Liu, Yuhao; Pharr, Matt; Salvatore, Giovanni Antonio

    2017-10-24

    Skin is the largest organ of the human body, and it offers a diagnostic interface rich with vital biological signals from the inner organs, blood vessels, muscles, and dermis/epidermis. Soft, flexible, and stretchable electronic devices provide a novel platform to interface with soft tissues for robotic feedback and control, regenerative medicine, and continuous health monitoring. Here, we introduce the term "lab-on-skin" to describe a set of electronic devices that have physical properties, such as thickness, thermal mass, elastic modulus, and water-vapor permeability, which resemble those of the skin. These devices can conformally laminate on the epidermis to mitigate motion artifacts and mismatches in mechanical properties created by conventional, rigid electronics while simultaneously providing accurate, non-invasive, long-term, and continuous health monitoring. Recent progress in the design and fabrication of soft sensors with more advanced capabilities and enhanced reliability suggest an impending translation of these devices from the research lab to clinical environments. Regarding these advances, the first part of this manuscript reviews materials, design strategies, and powering systems used in soft electronics. Next, the paper provides an overview of applications of these devices in cardiology, dermatology, electrophysiology, and sweat diagnostics, with an emphasis on how these systems may replace conventional clinical tools. The review concludes with an outlook on current challenges and opportunities for future research directions in wearable health monitoring.

  19. Semi-metallic, strong and stretchable wet-spun conjugated polymer microfibers

    KAUST Repository

    Zhou, Jian

    2015-01-21

    A dramatic improvement in electrical conductivity is necessary to make conductive polymer fibers viable candidates in applications such as flexible electrodes, conductive textiles, and fast-response sensors and actuators. In this study, high-performance poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS) conjugated polymer microfibers were fabricated via wet-spinning followed by hot-drawing. Due to the combined effects of the vertical hot-drawing process and doping/de-doping the microfibers with ethylene glycol (EG), we achieved a record electrical conductivity of 2804 S cm−1. This is, to the best of our knowledge, a six-fold improvement over the best previously reported value for PEDOT/PSS fibers (467 S cm−1) and a two-fold improvement over the best values for conductive polymer films treated by EG de-doping (1418 S cm−1). Moreover, we found that these highly conductive fibers experience a semiconductor–metal transition at 313 K. They also have superior mechanical properties with a Young\\'s modulus up to 8.3 GPa, a tensile strength reaching 409.8 MPa and a large elongation before failure (21%). The most conductive fiber also demonstrates an extraordinary electrical performance during stretching/unstretching: the conductivity increased by 25% before the fiber rupture point with a maximum strain up to 21%. Simple fabrication of the semi-metallic, strong and stretchable wet-spun PEDOT/PSS microfibers described here could make them available for conductive smart electronics.

  20. Stefan blowing effect on bioconvective flow of nanofluid over a solid rotating stretchable disk

    Directory of Open Access Journals (Sweden)

    N.A. Latiff

    2016-12-01

    Full Text Available A mathematical model for the unsteady forced convection over rotating stretchable disk in nanofluid containing micro-organisms and taking into account Stefan blowing effect is presented theoretically and numerically. Appropriate transformations are used to transform the governing boundary layer equations into non-linear ordinary differential equations, before being solved numerically using the Runge-Kutta-Fehlberg method. The effect of the governing parameters on the dimensionless velocities, temperature, nanoparticle volume fraction (concentration, density of motile microorganisms as well as on the local skin friction, local Nusselt, Sherwood number and motile microorganisms numbers are thoroughly examined via graphs. It is observed that the Stefan blowing increases the local skin friction and reduces the heat transfer, mass transfer and microorganism transfer rates. The numerical results are in good agreement with those obtained from previous literature. Physical quantities results from this investigation show that the effects of higher disk stretching strength and suction case provides a good medium to enhance the heat, mass and microorganisms transfer compared to blowing case.