Strain-induced topological quantum phase transition in phosphorene oxide

Science.gov (United States)

Kang, Seoung-Hun; Park, Jejune; Woo, Sungjong; Kwon, Young-Kyun

Using ab initio density functional theory, we investigate the structural stability and electronic properties of phosphorene oxides (POx) with different oxygen compositions x. A variety of configurations are modeled and optimized geometrically to search for the equilibrium structure for each x value. Our electronic structure calculations on the equilibrium configuration obtained for each x reveal that the band gap tends to increase with the oxygen composition of x 0.5. We further explore the strain effect on the electronic structure of the fully oxidized phosphorene, PO, with x = 1. At a particular strain without spin-orbit coupling (SOC) is observed a band gap closure near the Γ point in the k space. We further find the strain in tandem with SOC induces an interesting band inversion with a reopened very small band gap (5 meV), and thus gives rise to a topological quantum phase transition from a normal insulator to a topological insulator. Such a topological phase transition is confirmed by the wave function analysis and the band topology identified by the Z2 invariant calculation.

Slow Light Using Electromagnetically Induced Transparency from Spin Coherence in [110] Strained Quantum Wells

Science.gov (United States)

Chang, Shu-Wei; Chang-Hasnain, Connie J.; Wang, Hailin

2005-03-01

The electromagnetically induced transparency from spin coherence has been proposed in [001] quantum wells recently. [1] The spin coherence is a potential candidate to demonstrate semiconductor-based slow light at room temperature. However, the spin coherence time is not long enough to demonstrate a significant slowdown factor in [001] quantum wells. Further, the required transition of light-hole excitons lies in the absorption of heavy-hole continuum states. The extra dephasing and absorption from these continuum states are drawbacks for slow light. Here, we propose to use [110] strained quantum wells instead of [001] quantum wells. The long spin relaxation time in [110] quantum wells at room temperature, and thus more robust spin coherence, [2] as well as the strain-induced separation [3, 4] of the light-hole exciton transition from the heavy-hole continuum absorption can help to slow down light in quantum wells. [1] T. Li, H. Wang, N. H. Kwong, and R. Binder, Opt. Express 11, 3298 (2003). [2] Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, Phys. Rev. Lett. 83, 4196 (1999). [3] C. Y. P. Chao and S. L. Chuang, Phys. Rev. B 46, 4110 (1992). [4] C. Jagannath, E. S. Koteles, J. Lee, Y. J. Chen, B. S. Elman, and J. Y. Chi, Phys. Rev. B 34, 7027 (1986).

Strain-induced enhancement of thermoelectric performance of TiS2 monolayer based on first-principles phonon and electron band structures

Science.gov (United States)

Li, Guanpeng; Yao, Kailun; Gao, Guoying

2018-01-01

Using first-principle calculations combined with Boltzmann transport theory, we investigate the biaxial strain effect on the electronic and phonon thermal transport properties of a 1 T (CdI2-type) structural TiS2 monolayer, a recent experimental two-dimensional (2D) material. It is found that the electronic band structure can be effectively modulated and that the band gap experiences an indirect-direct-indirect transition with increasing tensile strain. The band convergence induced by the tensile strain increases the Seebeck coefficient and the power factor, while the lattice thermal conductivity is decreased under the tensile strain due to the decreasing group velocity and the increasing scattering chances between the acoustic phonon modes and the optical phonon modes, which together greatly increase the thermoelectric performance. The figure of merit can reach 0.95 (0.82) at an 8 percent tensile strain for the p-type (n-type) doping, which is much larger than that without strain. The present work suggests that the TiS2 monolayer is a good candidate for 2D thermoelectric materials, and that biaxial strain is a powerful tool with which to enhance thermoelectric performance.

Strain-induced large spin splitting and persistent spin helix at LaAlO$_3$/SrTiO$_3$ interface

OpenAIRE

Yamaguchi, Naoya; Ishii, Fumiyuki

2017-01-01

We investigated the effect of the tensile strain on the spin splitting at the n-type interface in LaAlO$_3$/SrTiO$_3$ in terms of the spin-orbit coupling coefficient $\\alpha$ and spin texture in the momentum space using first-principles calculations. We found that the $\\alpha$ could be controlled by the tensile strain and be enhanced up to 5 times for the tensile strain of 7%, and the effect of the tensile strain leads to a persistent spin helix, which has a long spin lifetime. These results ...

Spin Orbit Coupling Gap and Indirect Gap in Strain-Tuned Topological Insulator-Antimonene

OpenAIRE

Cheung, Chi-Ho; Fuh, Huei-Ru; Hsu, Ming-Chien; Lin, Yeu-Chung; Chang, Ching-Ray

2016-01-01

Recently, searching large-bulk band gap topological insulator (TI) is under intensive study. Through k?P theory and first-principles calculations analysis on antimonene, we find that ?-phase antimonene can be tuned to a 2D TI under an in-plane anisotropic strain and the magnitude of direct bulk band gap (SOC gap) depends on the strength of spin-orbit coupling (SOC) which is strain-dependent. As the band inversion of this TI accompanies with an indirect band gap, the TI bulk band gap is the in...

Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain

Science.gov (United States)

Mansir, J.; Conti, P.; Zeng, Z.; Pla, J. J.; Bertet, P.; Swift, M. W.; Van de Walle, C. G.; Thewalt, M. L. W.; Sklenard, B.; Niquet, Y. M.; Morton, J. J. L.

2018-04-01

We experimentally study the coupling of group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts that are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains |ɛ |hydrostatic component of strain and achieve semiquantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150 GHz per strain, for Bi donors in Si) offers a method for donor spin tuning—shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order 10-6—as well as opportunities for coupling to mechanical resonators.

Magnetization and spin-polarized conductance of asymmetrically hydrogenated graphene nanoribbons: significance of sigma bands

International Nuclear Information System (INIS)

Honda, Syuta; Inuzuka, Kouhei; Inoshita, Takeshi; Ota, Norio; Sano, Nobuyuki

2014-01-01

The magnetization and spin transport of asymmetric zigzag-edge graphene nanoribbons, terminated by hydrogen on one edge while unterminated on the other edge, were investigated by a combination of first-principles calculations and a tight-binding approach. At the unterminated edge, a spin-polarized σ edge state of minority spin appears near the Fermi level and contributes to spin transport. This state enters the band gap for ribbon widths of less than 15 chains, dominating the spin-polarized current. This indicates the importance of the σ edge states in the design of spintronic devices using graphene nanoribbons. We also examined the case where the ‘unterminated’ edge is partially terminated by hydrogen. (paper)

Anisotropic optical absorption induced by Rashba spin-orbit coupling in monolayer phosphorene

Science.gov (United States)

Li, Yuan; Li, Xin; Wan, Qi; Bai, R.; Wen, Z. C.

2018-04-01

We obtain the effective Hamiltonian of the phosphorene including the effect of Rashba spin-orbit coupling in the frame work of the low-energy theory. The spin-splitting energy bands show an anisotropy feature for the wave vectors along kx and ky directions, where kx orients to ΓX direction in the k space. We numerically study the optical absorption of the electrons for different wave vectors with Rashba spin-orbit coupling. We find that the spin-flip transition from the valence band to the conduction band induced by the circular polarized light closes to zero with increasing the x-component wave vector when ky equals to zero, while it can be significantly increased to a large value when ky gets a small value. When the wave vector varies along the ky direction, the spin-flip transition can also increase to a large value, however, which shows an anisotropy feature for the optical absorption. Especially, the spin-conserved transitions keep unchanged and have similar varying trends for different wave vectors. This phenomenon provides a novel route for the manipulation of the spin-dependent property of the fermions in the monolayer phosphorene.

Spins of superdeformed band in {sup 192}Hg

Energy Technology Data Exchange (ETDEWEB)

Lauritsen, T.; Khoo, T.L.; Henry, R.G. [and others

1995-08-01

Determination of the spins of SD states is the most important challenge in the study of superdeformation. Knowledge of the spin will provide crucial information on SD bands, in particular on the fascinating phenomenon of bands with identical energies and moments of inertia. Angular distribution coefficients of the {gamma}rays decaying out of the {sup 192}Hg SD band were determined using Eurogam data. These coefficients, as well as the spectral shape and multiplicity of the spectrum, are compared with the results of calculations, thereby providing a check on these calculations. From the measured decay multiplicity and the calculated average spin removed per photon (0.3 h), we deduce the average spin {bar I}{sub decay} removed by the {gamma} rays connecting SD and normal states. The spin I{sub SD} of the SD band from which the decay occurs is given by I{sub SD} = {bar I} decay + {bar I} ND, where {bar I} ND is the average spin removed by the normal yrast states. The state from which the major decay out of the SD band occurs is found to have spin 9.5 {plus_minus} 0.8 h. Since angular momentum is (quantized), this leads to a spin assignment of 9 or 10 h. The latter value is favored since the yrast band in the SD well must have only even spin values. This constitutes the first deduction of spin from data in the mass 150 and 190 regions. The spin of 10 h agrees with the spin which is inferred from a model, using the observed moment of inertia (Im){sup (2)}{omega}.

Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells.

Science.gov (United States)

Yu, Jinling; Cheng, Shuying; Lai, Yunfeng; Zheng, Qiao; Chen, Yonghai

2014-03-19

: Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect (CPGE) at inter-band excitation have been experimentally investigated in InGaAs/GaAs/AlGaAs step quantum wells (QWs) at room temperature. The Rashba- and Dresselhaus-induced CPGE spectra are quite similar with each other during the spectral region corresponding to the transition of the excitonic state 1H1E (the first valence subband of heavy hole to the first conduction subband of electrons). The ratio of Rashba- and Dresselhaus-induced CPGE current for the transition 1H1E is estimated to be 8.8±0.1, much larger than that obtained in symmetric QWs (4.95). Compared to symmetric QWs, the reduced well width enhances the Dresselhaus-type spin splitting, but the Rashba-type spin splitting increases more rapidly in the step QWs. Since the degree of the segregation effect of indium atoms and the intensity of build-in field in the step QWs are comparable to those in symmetric QWs, as proved by reflectance difference and photoreflectance spectra, respectively, the larger Rashba-type spin splitting is mainly induced by the additional interface introduced by step structures.

External-strain-induced semimetallic and metallic phase of chlorographene

Science.gov (United States)

Puri, Shivam; Bhowmick, Somnath

2018-04-01

To overcome the limitations of graphene due to lack of intrinsic band gap, it is generally functionalized with hydrogen or halogen atoms such as fluorine and chlorine. Generally, such functionalization yields a moderate- to high-band-gap material in case of 100% coverage, for example ≈1.5 eV in graphene functionalized with chlorine atoms or chlorographene. In this paper, using ab initio calculations, we report very interesting transformations observed in chlorographene under external strain, driving it to a state with nearly vanishing band gap (under tensile strain) and even converting it to a metal (under compressive strain). We also show the importance of spin-orbit coupling, responsible for the few meV band gap of chlorographene observed under high tensile strain, which would have been a gapless semimetal otherwise.

Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure

International Nuclear Information System (INIS)

Peter, A. John; Lee, Chang Woo

2012-01-01

Photo-induced spin dependent electron transmission through a narrow gap InSb/InGa x Sb 1−x semiconductor symmetric well is theoretically studied using transfer matrix formulism. The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium. Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed. Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration

Spins of superdeformed rotational bands in Tl isotopes

Energy Technology Data Exchange (ETDEWEB)

Dadwal, Anshul; Mittal, H.M. [Dr. B.R. Ambedkar National Institute of Technology, Jalandhar (India)

2017-01-15

The two-parameter model defined for even-even nuclei viz. soft-rotor formula is used to assign the band-head spin of the 17 rotational bands in Tl isotopes. The least-squares fitting method is employed to obtain the spins of these bands in the A ∝ 190 mass region. The calculated transition energies are found to depend sensitively on the proposed spin. Whenever a correct spin assignment is made, the calculated and experimental transition energies coincide very well. The dynamic moment of inertia is also calculated and its variation with rotational frequency is explored. (orig.)

Tunneling conductance of a two-dimensional electron gas with Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Srisongmuang, B.; Ka-oey, A.

2012-01-01

We theoretically studied the spin-dependent charge transport in a two-dimensional electron gas with Dresselhaus spin-orbit coupling (DSOC) and metal junctions. It is shown that the DSOC energy can be directly measured from the tunneling conductance spectrum. We found that spin polarization of the conductance in the propagation direction can be obtained by injecting from the DSOC system. We also considered the effect of the interfacial scattering barrier (both spin-flip and non-spin-flip scattering) on the overall conductance and the spin polarization of the conductance. It is found that the increase of spin-flip scattering can enhance the conductance under certain conditions. Moreover, both types of scattering can increase the spin polarization below the branches crossing of the energy band. - Highlights: → DSOC energy can be directly measured from tunneling conductance spectrum. → Spin polarization of conductance in the propagation direction can be obtained by injecting from DSOC system. → Both types of scattering can increase spin polarization.

Strain-induced band engineering in monolayer stanene on Sb(111)

Science.gov (United States)

Gou, Jian; Kong, Longjuan; Li, Hui; Zhong, Qing; Li, Wenbin; Cheng, Peng; Chen, Lan; Wu, Kehui

2017-10-01

The two-dimensional (2D) allotrope of tin with low buckled honeycomb structure named stanene is proposed to be an ideal 2D topological insulator with a nontrivial gap larger than 0.1 eV. Theoretical works also pointed out the topological property of stanene amenability to strain tuning. In this paper we report the successful realization of high quality, monolayer stanene film as well as monolayer stanene nanoribbons on Sb(111) surface by molecular-beam epitaxy, providing an ideal platform to the study of stanene. More importantly, we observed a continuous evolution of the electronic bands of stanene across the nanoribbon, related to the strain field gradient in stanene. Our work experimentally confirmed that strain is an effective method for band engineering in stanene, which is important for fundamental research and application of stanene.

Shear deformation-induced anisotropic thermal conductivity of graphene.

Science.gov (United States)

Cui, Liu; Shi, Sanqiang; Wei, Gaosheng; Du, Xiaoze

2018-01-03

Graphene-based materials exhibit intriguing phononic and thermal properties. In this paper, we have investigated the heat conductance in graphene sheets under shear-strain-induced wrinkling deformation, using equilibrium molecular dynamics simulations. A significant orientation dependence of the thermal conductivity of graphene wrinkles (GWs) is observed. The directional dependence of the thermal conductivity of GWs stems from the anisotropy of phonon group velocities as revealed by the G-band broadening of the phonon density of states (DOS), the anisotropy of thermal resistance as evidenced by the G-band peak mismatch of the phonon DOS, and the anisotropy of phonon relaxation times as a direct result of the double-exponential-fitting of the heat current autocorrelation function. By analyzing the relative contributions of different lattice vibrations to the heat flux, we have shown that the contributions of different lattice vibrations to the heat flux of GWs are sensitive to the heat flux direction, which further indicates the orientation-dependent thermal conductivity of GWs. Moreover, we have found that, in the strain range of 0-0.1, the anisotropy ratio of GWs increases monotonously with increasing shear strain. This is induced by the change in the number of wrinkles, which is more influential in the direction perpendicular to the wrinkle texture. The findings elucidated here emphasize the utility of wrinkle engineering for manipulation of nanoscale heat transport, which offers opportunities for the development of thermal channeling devices.

External electric field driven modification of the anomalous and spin Hall conductivities in Fe thin films on MgO(001)

Science.gov (United States)

Pradipto, Abdul-Muizz; Akiyama, Toru; Ito, Tomonori; Nakamura, Kohji

2018-01-01

The effects of applying external electric fields to the anomalous and spin Hall conductivities in Fe thin-film models with different layer thicknesses on MgO(001) are investigated by using first-principles calculations. We observe that, for the considered systems, the application of positive electric field associated with the accumulation of negative charges on the Fe side generally decreases (increases) the anomalous (spin) Hall conductivities. The mapping of the Hall conductivities within the two-dimensional Brillouin zone shows that the electric-field-induced modifications are related to the modification of the band structures of the atoms at the interface with the MgO substrate. In particular, the external electric field affects the Hall conductivities via the modifications of the dx z,dy z orbitals, in which the application of positive electric field pushes the minority-spin states of the dx z,dy z bands closer to the Fermi level. Better agreement with the anomalous Hall conductivity for bulk Fe and a more realistic scenario for the electric field modification of Hall conductivities are obtained by using the thicker layers of Fe on MgO (Fe3/MgO and Fe5/MgO).

Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

Energy Technology Data Exchange (ETDEWEB)

Sengupta, Parijat; Bellotti, Enrico [Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215 (United States)

2016-05-23

We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the off-resonant condition) do not excite electrons but rearrange the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe{sub 2} to MoS{sub 2}; the spin Hall conductivity of WSe{sub 2} was found to be larger.

Spin-relaxation time in the impurity band of wurtzite semiconductors

Science.gov (United States)

Tamborenea, Pablo I.; Wellens, Thomas; Weinmann, Dietmar; Jalabert, Rodolfo A.

2017-09-01

The spin-relaxation time for electrons in the impurity band of semiconductors with wurtzite crystal structure is determined. The effective Dresselhaus spin-orbit interaction Hamiltonian is taken as the source of the spin relaxation at low temperature and for doping densities corresponding to the metallic side of the metal-insulator transition. The spin-flip hopping matrix elements between impurity states are calculated and used to set up a tight-binding Hamiltonian that incorporates the symmetries of wurtzite semiconductors. The spin-relaxation time is obtained from a semiclassical model of spin diffusion, as well as from a microscopic self-consistent diagrammatic theory of spin and charge diffusion in doped semiconductors. Estimates are provided for particularly important materials. The theoretical spin-relaxation times compare favorably with the corresponding low-temperature measurements in GaN and ZnO. For InN and AlN we predict that tuning of the spin-orbit coupling constant induced by an external potential leads to a potentially dramatic increase of the spin-relaxation time related to the mechanism under study.

A facile approach to spinning multifunctional conductive elastomer fibres with nanocarbon fillers

International Nuclear Information System (INIS)

Seyedin, Shayan; Razal, Joselito M; Innis, Peter C; Wallace, Gordon G

2016-01-01

Electrically conductive elastomeric fibres prepared using a wet-spinning process are promising materials for intelligent textiles, in particular as a strain sensing component of the fabric. However, these fibres, when reinforced with conducting fillers, typically result in a compromise between mechanical and electrical properties and, ultimately, in the strain sensing functionality. Here we investigate the wet-spinning of polyurethane (PU) fibres with a range of conducting fillers such as carbon black (CB), single-walled carbon nanotubes (SWCNTs), and chemically converted graphene. We show that the electrical and mechanical properties of the composite fibres were strongly dependent on the aspect ratio of the filler and the interaction between the filler and the elastomer. The high aspect ratio SWCNT filler resulted in fibres with the highest electrical properties and reinforcement, while the fibres produced from the low aspect ratio CB had the highest stretchability. Furthermore, PU/SWCNT fibres presented the largest sensing range (up to 60% applied strain) and the most consistent and stable cyclic sensing behaviour. This work provides an understanding of the important factors that influence the production of conductive elastomer fibres by wet-spinning, which can be woven or knitted into textiles for the development of wearable strain sensors. (paper)

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

KAUST Repository

Zhu, Zhiyong

2011-10-14

Fully relativistic first-principles calculations based on density functional theory are performed to study the spin-orbit-induced spin splitting in monolayer systems of the transition-metal dichalcogenides MoS2, MoSe2, WS2, and WSe2. All these systems are identified as direct-band-gap semiconductors. Giant spin splittings of 148–456 meV result from missing inversion symmetry. Full out-of-plane spin polarization is due to the two-dimensional nature of the electron motion and the potential gradient asymmetry. By suppression of the Dyakonov-Perel spin relaxation, spin lifetimes are expected to be very long. Because of the giant spin splittings, the studied materials have great potential in spintronics applications.

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

KAUST Repository

Zhu, Zhiyong; Cheng, Yingchun; Schwingenschlö gl, Udo

2011-01-01

Fully relativistic first-principles calculations based on density functional theory are performed to study the spin-orbit-induced spin splitting in monolayer systems of the transition-metal dichalcogenides MoS2, MoSe2, WS2, and WSe2. All these systems are identified as direct-band-gap semiconductors. Giant spin splittings of 148–456 meV result from missing inversion symmetry. Full out-of-plane spin polarization is due to the two-dimensional nature of the electron motion and the potential gradient asymmetry. By suppression of the Dyakonov-Perel spin relaxation, spin lifetimes are expected to be very long. Because of the giant spin splittings, the studied materials have great potential in spintronics applications.

Giant Rashba spin splitting in Bi2Se3: Tl

KAUST Repository

Singh, Nirpendra

2014-07-25

First-principles calculations are employed to demonstrate a giant Rashba spin splitting in Bi2Se3:Tl. Biaxial tensile and compressive strain is used to tune the splitting by modifying the potential gradient. The band gap is found to increase under compression and decreases under tension, whereas the dependence of the Rashba spin splitting on the strain is the opposite. Large values of αR = 1.57 eV Å at the bottom of the conduction band (electrons) and αR = 3.34 eV Å at the top of the valence band (holes) are obtained without strain. These values can be further enhanced to αR = 1.83 eV Å and αR = 3.64 eV Å, respectively, by 2% tensile strain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections

Energy Technology Data Exchange (ETDEWEB)

Ribeiro, M. [Centro de Pesquisas Avancadas Wernher von Braun, Av. Alice de Castro P.N. Mattosinho 301, CEP 13098-392 Campinas, SP (Brazil); Ferreira, L.G. [Departamento de Fisica dos Materiais e Mecanica, Instituto de Fisica, Universidade de Sao Paulo, 05315-970 Sao Paulo, SP (Brazil); Fonseca, L.R.C. [Center for Semiconductor Components, State University of Campinas, R. Pandia Calogeras 90, 13083-870 Campinas, SP (Brazil); Ramprasad, R. [Department of Chemical, Materials and Biomolecular Engineering, Institute of Materials Science, University of Connecticut, 97 North Eagleville Road, Storrs, CT 06269 (United States)

2012-09-20

We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction scheme to obtain corrected band gaps and band offsets. Our calculations include the spin-orbit effects for the bulk cases, which have shown to be of importance for the equilibrium systems and are possibly degraded in these strained semiconductors. Therefore, the SO showed reduced importance for the band alignment of this particular system. Moreover, the electronic structure calculated along the transition region across the CdSe/CdTe interface shows an interesting non-monotonic variation of the band gap in the range 0.8-1.8 eV, which may enhance the absorption of light for corresponding frequencies at the interface between these two materials in photovoltaic applications.

Relaxation of electron–hole spins in strained graphene nanoribbons

International Nuclear Information System (INIS)

Prabhakar, Sanjay; Melnik, Roderick

2015-01-01

We investigate the influence of magnetic field originating from the electromechanical effect on the spin-flip behaviors caused by electromagnetic field radiation in the strained graphene nanoribbons (GNRs). We show that the spin splitting energy difference (≈10 meV) due to pseudospin is much larger than the spin-orbit coupling effect (Balakrishnan et al 2013 Nat. Phys. 9 284) that might provide an evidence of broken symmetry of degeneracy. The induced spin splitting energy due to ripple waves can be further enhanced with increasing values of applied tensile edge stress for potential applications in straintronic devices. In particular, we show that the enhancement in the magnitude of the ripple waves due to externally applied tensile edge stress extends the tuning of spin-flip behaviors to larger widths of GNRs. (paper)

Spin-Triplet Pairing Induced by Spin-Singlet Interactions in Noncentrosymmetric Superconductors

Science.gov (United States)

Matsuzaki, Tomoaki; Shimahara, Hiroshi

2017-02-01

In noncentrosymmetric superconductors, we examine the effect of the difference between the intraband and interband interactions, which becomes more important when the band splitting increases. We define the difference ΔVμ between their coupling constants, i.e., that between the intraband and interband hopping energies of intraband Cooper pairs. Here, the subscript μ of ΔVμ indicates that the interactions scatter the spin-singlet and spin-triplet pairs when μ = 0 and μ = 1,2,3, respectively. It is shown that the strong antisymmetric spin-orbit interaction reverses the target spin parity of the interaction: it converts the spin-singlet and spin-triplet interactions represented by ΔV0 and ΔVμ>0 into effective spin-triplet and spin-singlet pairing interactions, respectively. Hence, for example, triplet pairing can be induced solely by the singlet interaction ΔV0. We name the pairing symmetry of the system after that of the intraband Cooper pair wave function, but with an odd-parity phase factor excluded. The pairing symmetry must then be even, even for the triplet component, and the following results are obtained. When ΔVμ is small, the spin-triplet p-wave interactions induce spin-triplet s-wave and spin-triplet d-wave pairings in the regions where the repulsive singlet s-wave interaction is weak and strong, respectively. When ΔV0 is large, a repulsive interband spin-singlet interaction can stabilize spin-triplet pairing. When the Rashba interaction is adopted for the spin-orbit interaction, the spin-triplet pairing interactions mediated by transverse magnetic fluctuations do not contribute to triplet pairing.

Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain

International Nuclear Information System (INIS)

Peng Xihong; Tang Fu; Logan, Paul

2011-01-01

Strain modulated electronic properties of Si/Ge core-shell nanowires along the [110] direction were reported, on the basis of first principles density-functional theory calculations. In particular, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of the band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (∼1%), the valence band edge shifts away from Γ, which indicates that the band gap of the Si/Ge core-shell nanowires experiences a transition from direct to indirect. Our studies further showed that effective masses of charge carriers can also be tuned using the external uniaxial strain. The effective mass of the hole increases dramatically with tensile strain, while strain shows a minimal effect on tuning the effective mass of the electron. Finally, the relation between strain and the conduction/valence band edge is discussed thoroughly in terms of site-projected wavefunction characters.

Possible evidence for spin-transfer torque induced by spin-triplet supercurrent

KAUST Repository

Li, Lailai

2017-10-04

Cooper pairs in superconductors are normally spin singlet. Nevertheless, recent studies suggest that spin-triplet Cooper pairs can be created at carefully engineered superconductor-ferromagnet interfaces. If Cooper pairs are spin-polarized they would transport not only charge but also a net spin component, but without dissipation, and therefore minimize the heating effects associated with spintronic devices. Although it is now established that triplet supercurrents exist, their most interesting property - spin - is only inferred indirectly from transport measurements. In conventional spintronics, it is well known that spin currents generate spin-transfer torques that alter magnetization dynamics and switch magnetic moments. The observation of similar effects due to spin-triplet supercurrents would not only confirm the net spin of triplet pairs but also pave the way for applications of superconducting spintronics. Here, we present a possible evidence for spin-transfer torques induced by triplet supercurrents in superconductor/ferromagnet/superconductor (S/F/S) Josephson junctions. Below the superconducting transition temperature T_c, the ferromagnetic resonance (FMR) field at X-band (~ 9.0 GHz) shifts rapidly to a lower field with decreasing temperature due to the spin-transfer torques induced by triplet supercurrents. In contrast, this phenomenon is absent in ferromagnet/superconductor (F/S) bilayers and superconductor/insulator/ferromagnet/superconductor (S/I/F/S) multilayers where no supercurrents pass through the ferromagnetic layer. These experimental observations are discussed with theoretical predictions for ferromagnetic Josephson junctions with precessing magnetization.

Band head spin assignment of superdeformed bands in 133Pr using two-parameter formulae

Science.gov (United States)

Sharma, Honey; Mittal, H. M.

2018-03-01

The two-parameter formulae viz. the power index formula, the nuclear softness formula and the VMI model are adopted to accredit the band head spin (I0) of four superdeformed rotational bands in 133Pr. The technique of least square fitting is used to accredit the band head spin for four superdeformed rotational bands in 133Pr. The root mean deviation among the computed transition energies and well-known experimental transition energies are attained by extracting the model parameters from the two-parameter formulae. The determined transition energies are in excellent agreement with the experimental transition energies, whenever exact spins are accredited. The power index formula coincides well with the experimental data and provides minimum root mean deviation. So, the power index formula is more efficient tool than the nuclear softness formula and the VMI model. The deviation of dynamic moment of inertia J(2) against the rotational frequency is also examined.

EDITORIAL: Excelling under strain: band engineering in nanomaterials Excelling under strain: band engineering in nanomaterials

Science.gov (United States)

Demming, Anna

2013-08-01

interest in strain studies as well. Researchers in China investigated the effects of tensile strain on the thermal conductivity of graphene nanoribbons. Tuning the thermal conductivity of nanomaterials is highly desirable to optimize their functionality [5]. Wei and colleagues use computer simulations based on reverse nonequilibrium molecular dynamics (RNEMD) to demonstrate what they describe as 'a strain-induced magic flexibility of thermal engineering for carbon-based nanostructures', which may provide a new approach for tailoring nanomaterial functionality. Despite the attractions of more recently discovered carbon nanomaterials silicon remains the bedrock of the semiconductor device industry. Germanium nanostructures also hold significant interest, such as Ge nanowires, which have high mobility and a conveniently low synthesis temperature [6]. In fact the potential applications of germanium nanowires in field effect transistors and nanobridge devices prompted Jagadish and colleagues in Australia, Korea and the UK to investigate the growth of taper-free kinked Ge nanowires in silicon [7]. As they point out many recent reports have highlighted such kinked nanowires as valuable components for novel nanodevices. The work reported by Hrauda and colleagues in this issue looks at the growth of germanium islands on a silicon substrate rather than nanowires [2]. They grow islands on pre-patterned silicon with different levels of Ge deposition with the aim of better understanding how to manage the effects of strain due to lattice mismatch between the two metals. Their results show that considerably more Ge can be deposited without dislocations forming than previously thought and reveal a distinctive cycle of changing island morphologies as Ge is deposited. They add, 'Strain relaxation is revealed to be the main driving force of a rather complex evolution of island shape and Ge distribution'. In reference to his theory of atoms Bohr is once said to have told Werner Heisenberg

Effect of ferromagnetic exchange field on band gap and spin polarisation of graphene on a TMD substrate

Science.gov (United States)

Goswami, Partha

2018-03-01

We calculate the electronic band dispersion of graphene monolayer on a two-dimensional transition metal dichalcogenide substrate (GrTMD) around K and K^' } points by taking into account the interplay of the ferromagnetic impurities and the substrate-induced interactions. The latter are (strongly enhanced) intrinsic spin-orbit interaction (SOI), the extrinsic Rashba spin-orbit interaction (RSOI) and the one related to the transfer of the electronic charge from graphene to substrate. We introduce exchange field ( M) in the Hamiltonian to take into account the deposition of magnetic impurities on the graphene surface. The cavalcade of the perturbations yield particle-hole symmetric band dispersion with an effective Zeeman field due to the interplay of the substrate-induced interactions with RSOI as the prime player. Our graphical analysis with extremely low-lying states strongly suggests the following: The GrTMDs, such as graphene on WY2, exhibit (direct) band-gap narrowing / widening (Moss-Burstein (MB) gap shift) including the increase in spin polarisation ( P) at low temperature due to the increase in the exchange field ( M) at the Dirac points. The polarisation is found to be electric field tunable as well. Finally, there is anticrossing of non-parabolic bands with opposite spins, the gap closing with same spins, etc. around the Dirac points. A direct electric field control of magnetism at the nanoscale is needed here. The magnetic multiferroics, like BiFeO3 (BFO), are useful for this purpose due to the coupling between the magnetic and electric order parameters.

Spin-pump-induced spin transport in a thermally evaporated pentacene film

Energy Technology Data Exchange (ETDEWEB)

Tani, Yasuo; Shikoh, Eiji, E-mail: shikoh@elec.eng.osaka-cu.ac.jp [Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585 (Japan); Teki, Yoshio [Graduate School of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-ku, Osaka 558-8585 (Japan)

2015-12-14

We report the spin-pump-induced spin transport properties of a pentacene film prepared by thermal evaporation. In a palladium(Pd)/pentacene/Ni{sub 80}Fe{sub 20} tri-layer sample, a pure spin-current is generated in the pentacene layer by the spin-pumping of Ni{sub 80}Fe{sub 20}, which is independent of the conductance mismatch problem in spin injection. The spin current is absorbed into the Pd layer, converted into a charge current with the inverse spin-Hall effect in Pd, and detected as an electromotive force. This is clear evidence for the pure spin current at room temperature in pentacene films prepared by thermal evaporation.

Magneto-spin Hall conductivity of a two-dimensional electron gas

OpenAIRE

Milletari', M.; Raimondi, R.; Schwab, P.

2008-01-01

It is shown that the interplay of long-range disorder and in-plane magnetic field gives rise to an out-of-plane spin polarization and a finite spin Hall conductivity of the two-dimensional electron gas in the presence of Rashba spin-orbit coupling. A key aspect is provided by the electric-field induced in-plane spin polarization. Our results are obtained first in the \\textit{clean} limit where the spin-orbit splitting is much larger than the disorder broadening of the energy levels via the di...

Spin-orbit-induced spin splittings in polar transition metal dichalcogenide monolayers

KAUST Repository

Cheng, Yingchun

2013-06-01

The Rashba effect in quasi two-dimensional materials, such as noble metal surfaces and semiconductor heterostructures, has been investigated extensively, while interest in real two-dimensional systems has just emerged with the discovery of graphene. We present ab initio electronic structure, phonon, and molecular-dynamics calculations to study the structural stability and spin-orbit-induced spin splitting in the transition metal dichalcogenide monolayers MXY (M = Mo, W and X, Y = S, Se, Te). In contrast to the non-polar systems with X = Y, in the polar systems with X ≠ Y the Rashba splitting at the Γ-point for the uppermost valence band is caused by the broken mirror symmetry. An enhancement of the splitting can be achieved by increasing the spin-orbit coupling and/or the potential gradient. © Copyright EPLA, 2013.

Conductance and spin polarization for a quantum wire with the competition of Rashba and Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Fu Xi; Chen Zeshun; Zhong Feng; Zhou Guanghui

2010-01-01

We investigate theoretically the spin transport of a quantum wire (QW) with weak Rashba and Dresselhaus spin-orbit coupling (SOC) nonadiabatically connected to two normal leads. Using scattering matrix method and Landauer-Buettiker formula within effective free-electron approximation, we have calculated spin-dependent conductances G ↑ and G ↓ , total conductance G and spin polarization P z for a hard-wall potential confined QW. It is demonstrated that, the SOCs induce the splitting of G ↑ and G ↓ and form spin polarization P z . Moreover, the conductances present quantized plateaus, the plateaus and P z show oscillation structures near the subband edges. Furthermore, with the increase of QW width a strong spin polarization (P z ∼1) gradually becomes weak, which can be used to realize a spin filter. When the two SOCs coexist, the total conductance presents an isotropy transport due to the Rashba and Dresselhaus Hamiltonians being fixed, and the alteration of two SOCs strength ratio changes the sign of spin polarization. This may provide a way of realizing the expression of unit information by tuning gate voltage.

Identification of an Actual Strain-Induced Effect on Fast Ion Conduction in a Thin-Film Electrolyte.

Science.gov (United States)

Ahn, Junsung; Jang, Ho Won; Ji, Hoil; Kim, Hyoungchul; Yoon, Kyung Joong; Son, Ji-Won; Kim, Byung-Kook; Lee, Hae-Weon; Lee, Jong-Ho

2018-05-09

Strain-induced fast ion conduction has been a research area of interest for nanoscale energy conversion and storage systems. However, because of significant discrepancies in the interpretation of strain effects, there remains a lack of understanding of how fast ionic transport can be achieved by strain effects and how strain can be controlled in a nanoscale system. In this study, we investigated strain effects on the ionic conductivity of Gd 0.2 Ce 0.8 O 1.9-δ (100) thin films under well controlled experimental conditions, in which errors due to the external environment could not intervene during the conductivity measurement. In order to avoid any interference from perpendicular-to-surface defects, such as grain boundaries, the ionic conductivity was measured in the out-of-plane direction by electrochemical impedance spectroscopy analysis. With varying film thickness, we found that a thicker film has a lower activation energy of ionic conduction. In addition, careful strain analysis using both reciprocal space mapping and strain mapping in transmission electron microscopy shows that a thicker film has a higher tensile strain than a thinner film. Furthermore, the tensile strain of thicker film was mostly developed near a grain boundary, which indicates that intrinsic strain is dominant rather than epitaxial or thermal strain during thin-film deposition and growth via the Volmer-Weber (island) growth mode.

A polarized photoluminescence study of strained layer GaAs photocathodes

International Nuclear Information System (INIS)

Mair, R.A.

1996-07-01

Photoluminescence measurements have been made on a set of epitaxially grown strained GaAs photocathode structures. The photocathodes are designed to exhibit a strain-induced enhancement of the electron spin polarization obtainable by optical pumping with circularly polarized radiation of near band gap energy. For the case of non-strained GaAs, the degree of spin polarization is limited to 50% by crystal symmetry. Under an appropriate uniaxial compression or tension, however, the valence band structure near the gap minimum is modified such that a spin polarization of 100% is theoretically possible. A total of nine samples with biaxial compressive strains ranging from zero to ∼0.8% are studied. X-ray diffraction analysis, utilizing Bragg reflections, is used to determine the crystal lattice structure of the samples. Luminescence spectra and luminescence circular polarization data are obtained at room temperature, ∼78 K and ∼12 K. The degree of luminescence circular polarization is used as a relative measure of the photo-excited electron spin polarization. The room temperature luminescence circular polarization data is compared with the measured electron spin polarization when the samples are used as electron photo-emitters with a negative electron affinity surface preparation. The luminescence data is also analyzed in conjunction with the crystal structure data with the goal of understanding the strain dependent valence band structure, optical pumping characteristics and spin depolarization mechanisms of the photocathode structures. A simple model is used to describe the luminescence data, obtained for the set of samples. Within the assumptions of the model, the deformation potentials a, b and d for GaAs are determined. The measured values are a = -10.16±.21 eV, b = -2.00±.05 eV and d = -4.87±.29 eV. Good agreement with published values of the deformation potentials provides support for the model used to describe the data

Strain gradient drives shear banding in metallic glasses

Science.gov (United States)

Tian, Zhi-Li; Wang, Yun-Jiang; Chen, Yan; Dai, Lan-Hong

2017-09-01

Shear banding is a nucleation-controlled process in metallic glasses (MGs) involving multiple temporal-spatial scales, which hinders a concrete understanding of its structural origin down to the atomic scale. Here, inspired by the morphology of composite materials, we propose a different perspective of MGs as a hard particle-reinforced material based on atomic-scale structural heterogeneity. The local stable structures indicated by a high level of local fivefold symmetry (L5FS) act as hard "particles" which are embedded in the relatively soft matrix. We demonstrate this concept by performing atomistic simulations of shear banding in CuZr MG. A shear band is prone to form in a sample with a high degree of L5FS which is slowly quenched from the liquid. An atomic-scale analysis on strain and the structural evolution reveals that it is the strain gradient effect that has originated from structural heterogeneity that facilitates shear transformation zones (STZs) to mature shear bands. An artificial composite model with a high degree of strain gradient, generated by inserting hard MG strips into a soft MG matrix, demonstrates a great propensity for shear banding. It therefore confirms the critical role strain gradient plays in shear banding. The strain gradient effect on shear banding is further quantified with a continuum model and a mechanical instability analysis. These physical insights might highlight the strain gradient as the hidden driving force in transforming STZs into shear bands in MGs.

High-spin structure of 121Xe: triaxiality, band termination and signature inversion

International Nuclear Information System (INIS)

Timar, J.; Paul, E.S.; Beausang, C.W.; Joyce, M.J.; Sharpey-Schafer, J.F.

1995-01-01

High-spin states of the odd-neutron 121 Xe nucleus have been studied with Eurogam using the 96 Zr( 30 Si, 5n) 121 Xe fusion-evaporation reaction. The level scheme has been extended up to a tentative spin of 67/2h at an excitation energy of ∼ 14 MeV. Several new rotational bands have been observed and the previously known bands extended. Two of them lose their regular character at high spins, which may be interpreted as transition from collective behaviour to a regime of noncollective oblate states. The deduced high-spin structure is compared to Woods-Saxon TRS cranking and CSM calculations. Configurations of the bands have been suggested. The νh 1 1/2 band is interpreted as having a triaxial shape. Signature inversion and an unexpectedly large staggering of the B(M1)/B(E2) ratios has been found for one of the bands. Enhanced E1 transitions have been observed between the νd 5/2 and the νh 1 1/2 bands. (orig.)

Strain localization band width evolution by electronic speckle pattern interferometry strain rate measurement

Energy Technology Data Exchange (ETDEWEB)

Guelorget, Bruno [Institut Charles Delaunay-LASMIS, Universite de technologie de Troyes, FRE CNRS 2848, 12 rue Marie Curie, B.P. 2060, 10010 Troyes Cedex (France)], E-mail: bruno.guelorget@utt.fr; Francois, Manuel; Montay, Guillaume [Institut Charles Delaunay-LASMIS, Universite de technologie de Troyes, FRE CNRS 2848, 12 rue Marie Curie, B.P. 2060, 10010 Troyes Cedex (France)

2009-04-15

In this paper, electronic speckle pattern interferometry strain rate measurements are used to quantify the width of the strain localization band, which occurs when a sheet specimen is submitted to tension. It is shown that the width of this band decreases with increasing strain. Just before fracture, this measured width is about five times wider than the shear band and the initial sheet thickness.

h-BN/graphene van der Waals vertical heterostructure: a fully spin-polarized photocurrent generator.

Science.gov (United States)

Tao, Xixi; Zhang, Lei; Zheng, Xiaohong; Hao, Hua; Wang, Xianlong; Song, Lingling; Zeng, Zhi; Guo, Hong

2017-12-21

By constructing transport junctions using graphene-based van der Waals (vdW) heterostructures in which a zigzag-edged graphene nanoribbon (ZGNR) is sandwiched between two hexagonal boron-nitride sheets, we computationally demonstrate a new scheme for generating perfect spin-polarized quantum transport in ZGNRs by light irradiation. The mechanism lies in the lift of spin degeneracy of ZGNR induced by the stagger potential it receives from the BN sheets and the subsequent possibility of single spin excitation of electrons from the valence band to the conduction band by properly tuning the photon energy. This scheme is rather robust in that we always achieve desirable results irrespective of whether we decrease or increase the interlayer distance by applying compressive or tensile strain vertically to the sheets or shift the BN sheets in-plane relative to the graphene nanoribbons. More importantly, this scheme overcomes the long-standing difficulties in traditional ways of using solely electrical field or chemical modification for obtaining half-metallic transport in ZGNRs and thus paves a more feasible way for their application in spintronics.

Symmetry analysis of strain, electric and magnetic fields in the Bi2Se3-class of topological insulators

DEFF Research Database (Denmark)

Brems, Mathias Rosdahl; Paaske, Jens; Lunde, Anders Mathias

2018-01-01

velocity. The spin-momentum locking of strained Bi2Se3 is shown to be modified. Hence, strain control can be used to manipulate the spin degree of freedom via the spin–orbit coupling. We show that for a thin film of Bi2Se3 the SS band gap induced by coupling between the opposite surfaces changes opposite...... to the bulk band gap under strain. Tuning the SS band gap by strain, gives new possibilities for the experimental investigation of the thickness dependent gap and optimization of optical properties relevant for, e.g., photodetector and energy harvesting applications. We finally derive analytical expressions...... analytically the effects of strain on the electronic structure of Bi2Se3. For the most experimentally relevant surface termination we analytically derive the surface state (SS) spectrum, revealing an anisotropic Dirac cone with elliptical constant energy contours giving rise to a direction-dependent group...

Tunability of the Quantum Spin Hall Effect in Bi(110) Films: Effects of Electric Field and Strain Engineering.

Science.gov (United States)

Li, Sheng-Shi; Ji, Wei-Xiao; Li, Ping; Hu, Shu-Jun; Cai, Li; Zhang, Chang-Wen; Yan, Shi-Shen

2017-06-28

The quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to their robust gapless edge states inside insulating bulk gap. However, the currently discussed QSH insulators usually suffer from ultrahigh vacuum or low temperature due to the small bulk gap, which limits their practical applications. Searching for large-gap QSH insulators is highly desirable. Here, the tunable QSH state of a Bi(110) films with a black phosphorus (BP) structure, which is robust against structural deformation and electric field, is explored by first-principles calculations. It is found that the two-monolayer BP-Bi(110) film obtains a tunable large bulk gap by strain engineering and its QSH effect shows a favorable robustness within a wide range of combinations of in-plane and out-of-plane strains, although a single in-plane compression or out-of-plane extension may restrict the topological phase due to the self-doping effect. More interestingly, in view of biaxial strain, two competing physics on band topology induced by bonding-antibonding and p x,y -p z band inversions are obtained. Meanwhile, the QSH effect can be persevered under an electric field of up to 0.9 V/Å. Moreover, with appropriate in-plane strain engineering, a nontrivial topological phase in a four-monolayer BP-Bi(110) film is identified. Our findings suggest that these two-dimensional BP-Bi(110) films are ideal platforms of the QSH effect for low-power dissipation devices.

The two bands model for the high temperature conductivity of the binary rare earth alloys

International Nuclear Information System (INIS)

Borgiel, W.

1983-09-01

The formula for the high temperature spin disorder resistivity for the concentrated Asub(1-x)Bsub(x)C alloys where A,B is an element of Rare Earth (RE) is determined on the basis of two bands model and the coherent potential approximation (CPA). The conductivity given by the 5d bands coming from the RE compounds has been taken into account

Strain effects in the common-cation II-VI heterostructures: case of ZnS/ZnSe superlattices

CERN Document Server

Tit, N

2003-01-01

The electronic band-structures of the strained-layer ZnS/ZnSe (001) superlattices (SLs) have been investigated using the sp sup 3 s* tight-binding method, which includes the strain and spin-orbit effects. The SL band-structures are studied versus the biaxial strain, layer thickness, and band offsets. The results suggest that the common-cation II-VI heterojunction exhibit a vanishingly small conduction-band offset (CBO). It is shown that the SL valence-band top state is always a heavy-hole localized within ZnSe slabs; whereas the conduction-band edge state (electron) is sensitive to the biaxial strain (or VBO). To assess the strain effects, we considered three differently strained SLs corresponding to the three substrates: (i) ZnSe; (ii) ZnS sub 0 sub . sub 5 Se sub 0 sub . sub 5; and (iii) ZnS. The results show that all the studied SLs are of type-I except those strained to ZnS (case iii), that may exhibit type-I to type-II transition. One striking result obtained here is the existence of a critical VBO (V su...

Resolved sidebands in a strain-coupled hybrid spin-oscillator system

OpenAIRE

Teissier, Jean; Barfuss, Arne; Appel, Patrick; Neu, Elke; Maletinsky, P.

2014-01-01

We report on single electronic spins coupled to the motion of mechanical resonators by a novel mechanism based on crystal strain. Our device consists of single-crystalline diamond cantilevers with embedded Nitrogen-Vacancy center spins. Using optically detected electron spin resonance, we determine the unknown spin-strain coupling constants and demonstrate that our system resides well within the resolved sideband regime. We realize coupling strengths exceeding ten MHz under mechanical driving...

High spin rotational bands in Zn

Indian Academy of Sciences (India)

We present here some preliminary results from our studies in the. ~ ¼ region in which we have observed an yrast band structure in Zn extending to spin (41/2 ). ... gaps implies that nuclei may exhibit different shapes at different excitation energies. .... uration, identifying previously unobserved states up to an excitation energy ...

Prediction of giant intrinsic spin-Hall effect in strained p-GaAs quantum wells

Energy Technology Data Exchange (ETDEWEB)

Schindler, Christoph; Kubis, Tillmann; Vogl, Peter [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany)

2009-07-01

We present a systematic study of the intrinsic spin-Hall effect and its inverse effect in various two dimensional nanostructures using the non-equilibrium Green's function technique. We include elastic impurity scattering as well as inelastic acoustical phonon scattering. The parameters for the Dresselhaus and Rashba spin-orbit coupling are obtained from an atomistic tight binding calculation. We predict exceptionally large spin polarization effects in specially band engineered and geometrically designed nanostructures. In strained p-GasAs, we find a k-linear spin splitting that is enhanced by a factor of 50 compared to the unstrained case. We propose a T shaped three-terminal device that acts as a spin polarizer without external magnetic field. Optimizing the geometry with respect to the spin-precession length results in a spin accumulation at the drain contacts of up to 25%. We also study the inverse intrinsic spin-Hall effect. In a four-terminal ''H'' shaped structure it can be used to measure the direct spin-Hall effect by simply applying a gate voltage. For such a measurement, we predict a threshold value for the spin-orbit coupling strength that cannot be met by simple n-GaAs systems.

Band head spin assignment of superdeformed bands in Hg isotopes through power index formula

Science.gov (United States)

Sharma, Honey; Mittal, H. M.

2018-05-01

The power index formula has been used to obtain the band head spin (I 0) of all the superdeformed (SD) bands in Hg isotopes. A least squares fitting approach is used. The root mean square deviations between the determined and the observed transition energies are calculated by extracting the model parameters using the power index formula. Whenever definite spins are available, the determined and the observed transition energies are in accordance with each other. The computed values of dynamic moment of inertia J (2) obtained by using the power index formula and its deviation with the rotational frequency is also studied. Excellent agreement is shown between the calculated and the experimental results for J (2) versus the rotational frequency. Hence, the power index formula works very well for all the SD bands in Hg isotopes expect for 195Hg(2, 3, 4).

Field induced phase transition in layered honeycomb spin system α-RuCl3 studied by thermal conductivity

Science.gov (United States)

Leahy, Ian; Bornstein, Alex; Choi, Kwang-Yong; Lee, Minhyea

α -RuCl3, a quasi -two-dimensional honeycomb lattice is known to be a candidate material to realize the Heisenberg-Kitaev spin model of a highly anisotropic bond-dependent exchange interaction. We investigate in-plane thermal conductivity (κ) as a function of temperature (T) and in-plane applied field (H). At H = 0 , the onset of a strong increase in κ marks the spontaneous long range ordering temperature, Tc = 6 . 5 K , corresponding to ``zigzag'' antiferromagnetic ordering. A broad peak appearing below Tc in κ was found to be suppressed significantly as H increases up to ~ 7 T , implying the system undergoes a field-induced transition from ordered to a new spin-disordered state analogous to the transverse-field Ising model. Further increasing H above 7 . 1 T , the large field seems to begin polarizing spins thus increasing the phonon mean free path, resulting in a significant rise in κ. This tendency is clearly shown in the field dependence of κ below Tc, which has a pronounced minimum at Hmin = 7 . 1 T . We will discuss our scaling analysis to characterize this field-induced phase transition and compare to the transverse-field Ising spin system. Work at the University of Colorado was supported by the US DOE Basic Energy Sciences under Award No. DE-SC0006888.

Vortex-induced dynamic loads on a non-spinning volleyball

Science.gov (United States)

Qing-ding, Wei; Rong-sheng, Lin; Zhi-jie, Liu

1988-09-01

An experiment on vortex-induced dynamic loads on a non-spinning Volleyball was conducted in a wind tunnel. The flow past the Volleyball was visualized, and the aerodynamic load was measured by use of a strain gauge balance. The separation on the Volleyball was measured with hot-film. The experimental results suggest that under the action of an unstable tail vortex system the separation region is changeable, and that the fluctuation of drag and lateral forces is the same order of magnitude as the mean drag, no matter whether the seam of the Volleyball is symmetric or asymmetric, with regard to the flow. Based on the experimental data a numerical simulation of Volleyball swerve motion was made.

Thermal conductivity of a superconducting spin-glass

International Nuclear Information System (INIS)

Crisan, M.

1988-01-01

The temperature dependence of the thermal conductivity for a superconducting spin-glass is calculated, taking a short-range spin-spin interaction in a super-conductor carrying a uniform flow. The presence of the short-range interaction between frozen spins gives rise to a strong depression in the thermal conductivity

The effect of spin-orbit coupling in band structure of few-layer graphene

Energy Technology Data Exchange (ETDEWEB)

Sahdan, Muhammad Fauzi, E-mail: sahdan89@yahoo.co.id; Darma, Yudi, E-mail: sahdan89@yahoo.co.id [Department of Physics, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132 (Indonesia)

2014-03-24

Topological insulators are electronic materials that have a bulk band gap like an ordinary insulator but have protected conducting states on their edge or surface. This can be happened due to spin-orbit coupling and time-reversal symmetry. Moreover, the edge current flows through their edge or surface depends on its spin orientation and also it is robust against non-magnetic impurities. Therefore, topological insulators are predicted to be useful ranging from spintronics to quantum computation. Graphene was first predicted to be the precursor of topological insulator by Kane-Mele. They developed a Hamiltonian model to describe the gap opening in graphene. In this work, we investigate the band structure of few-layer graphene by using this model with analytical approach. The results of our calculations show that the gap opening occurs at K and K’ point, not only in single layer, but also in bilayer and trilayer graphene.

Conduction gap in graphene strain junctions: direction dependence

International Nuclear Information System (INIS)

Nguyen, M Chung; Nguyen, V Hung; Dollfus, P; Nguyen, Huy-Viet

2014-01-01

It has been shown in a recent study (Nguyen et al 2014 Nanotechnology 25 165201) that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors which is usually hindered by the gapless nature of graphene. Although the energy bandgap of strained graphene still remains zero, the shift of Dirac points in the k-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundred meV in strained junctions with a strain of only a few per cent. However, since it depends essentially on the magnitude of the Dirac point shift, this conduction gap strongly depends on the direction of applied strain and the transport direction. In this work, a systematic study of conduction-gap properties with respect to these quantities is presented and the results are carefully analyzed. Our study provides useful information for further investigations to exploit graphene-strained junctions in electronic applications and strain sensors. (paper)

Synthetical analysis of the spin assignment for the superdeformed bands in A≅190 region

International Nuclear Information System (INIS)

Di Yaomin

2002-01-01

The spin assignment for the superdeformed bands of even-even nuclei in A ≅190 region is given by means of using the method of synthetical analysis. The I( I + 1) expression is used to fit the experimental data of the transition γ energies. In contrast to other procedure, the convergence process of the series expansions is put stress upon, whereas taking how many terms exactly in the expression does not emphasized. Moreover as well as the method of fitting the physical quantity, by use of these series expansions the moment of inertia of band heads is also calculated and then the systematics is used for the spin assignments. In practice, when the experimental data is abundant the systematics of the moment of inertia of band heads is more efficient than the method of fitting the physical quantity in the spin assignment. As for a few bands which spin assignment is difficult, the deviation from the typical rotational bands must be considered, which may be judged easily from the second class of moment of inertia of the bands. Finally the results of the spin assignment and the comparison with other literature are presented. These results should be more reliable

Spin-dependent delay time and Hartman effect in asymmetrical graphene barrier under strain

Science.gov (United States)

Sattari, Farhad; Mirershadi, Soghra

2018-01-01

We study the spin-dependent tunneling time, including group delay and dwell time, in a graphene based asymmetrical barrier with Rashba spin-orbit interaction in the presence of strain, sandwiched between two normal leads. We find that the spin-dependent tunneling time can be efficiently tuned by the barrier width, and the bias voltage. Moreover, for the zigzag direction strain although the oscillation period of the dwell time does not change, the oscillation amplitude increases by increasing the incident electron angle. It is found that for the armchair direction strain unlike the zigzag direction the group delay time at the normal incidence depends on the spin state of electrons and Hartman effect can be observed. In addition, for the armchair direction strain the spin polarization increases with increasing the RSOI strength and the bias voltage. The magnitude and sign of spin polarization can be manipulated by strain. In particular, by applying an external electric field the efficiency of the spin polarization is improved significantly in strained graphene, and a fully spin-polarized current is generated.

Quasiparticle semiconductor band structures including spin-orbit interactions.

Science.gov (United States)

Malone, Brad D; Cohen, Marvin L

2013-03-13

We present first-principles calculations of the quasiparticle band structure of the group IV materials Si and Ge and the group III-V compound semiconductors AlP, AlAs, AlSb, InP, InAs, InSb, GaP, GaAs and GaSb. Calculations are performed using the plane wave pseudopotential method and the 'one-shot' GW method, i.e. G(0)W(0). Quasiparticle band structures, augmented with the effects of spin-orbit, are obtained via a Wannier interpolation of the obtained quasiparticle energies and calculated spin-orbit matrix. Our calculations explicitly treat the shallow semicore states of In and Ga, which are known to be important in the description of the electronic properties, as valence states in the quasiparticle calculation. Our calculated quasiparticle energies, combining both the ab initio evaluation of the electron self-energy and the vector part of the pseudopotential representing the spin-orbit effects, are in generally very good agreement with experimental values. These calculations illustrate the predictive power of the methodology as applied to group IV and III-V semiconductors.

Highly effective strain-induced band-engineering of (111) oriented, direct-gap GeSn crystallized on amorphous SiO{sub 2} layers

Energy Technology Data Exchange (ETDEWEB)

Li, Haofeng; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, 14 Engineering Drive, Hanover, New Hampshire 03755 (United States)

2016-03-07

We demonstrate highly effective strain-induced band-engineering of (111) oriented direct-gap Ge{sub 1−x}Sn{sub x} thin films (0.074 < x < 0.085) crystallized on amorphous SiO{sub 2} towards 3D photonic integration. Due to a much smaller Poisson's ratio for (111) vs. (100) orientation, 0.44% thermally induced biaxial tensile strain reduces the direct-gap by 0.125 eV towards enhanced direct-gap semiconductor properties, twice as effective as the tensile strain in Ge(100) films. Correspondingly, the optical response is extended to λ = 2.8 μm. A dilatational deformation potential of a = −12.8 ± 0.8 eV is derived. These GeSn films also demonstrate high thermal stability, offering both excellent direct-gap optoelectronic properties and fabrication/operation robustness for integrated photonics.

Spin splitting in band structures of BiTeX (X=Cl, Br, I) monolayers

Science.gov (United States)

Hvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.

2018-04-01

In systems with breaking of inversion symmetry a perpendicular electric field arises that interacts with the conduction electrons. It may give rise to electron state splitting even without influence of external magnetic field due to the spin-orbital interaction (SOI). Such a removal of the spin degeneracy is called the Rashba effect. Nanostructure with the Rashba effect can be part of a spin transistor. Spin degeneracy can be realized in a channel from a material of this type without additive of magnetic ions. Lack of additive increases the charge carrier mobility and reliability of the device. Ab initio simulations of BiTeX (X=Cl, Br, I) monolayers have been carried out using VASP wherein implemented DFT method. The study of this structures is of interest because such sort of structures can be used their as spin-orbitronics materials. The crystal parameters of BiTeCl, BiTeBr, BiTeI have been determined by the ionic relaxation and static calculations. It is necessary to note that splitting of energy bands occurs in case of SOI included. The values of the Rashba coefficient aR (in the range from 6.25 to 10.00 eV·Å) have high magnitudes for spintronics materials. Band structure of monolayers structures have ideal Rashba electron gas, i.e. there no other energy states near to Fermi level except Rashba states.

Predicting superdeformed rotational band-head spin in A ∼ 190 mass region using variable moment of inertia model

International Nuclear Information System (INIS)

Uma, V.S.; Goel, Alpana; Yadav, Archana; Jain, A.K.

2016-01-01

The band-head spin (I 0 ) of superdeformed (SD) rotational bands in A ∼ 190 mass region is predicted using the variable moment of inertia (VMI) model for 66 SD rotational bands. The superdeformed rotational bands exhibited considerably good rotational property and rigid behaviour. The transition energies were dependent on the prescribed band-head spins. The ratio of transition energies over spin Eγ/ 2 I (RTEOS) vs. angular momentum (I) have confirmed the rigid behaviour, provided the band-head spin value is assigned correctly. There is a good agreement between the calculated and the observed transition energies. This method gives a very comprehensive interpretation for spin assignment of SD rotational bands which could help in designing future experiments for SD bands. (author)

Strain-engineering of the topological insulator HgTe

International Nuclear Information System (INIS)

Leubner, Philipp

2017-01-01

demonstrated as well. Strain in bulk layers lifts the degeneracy of the Γ 8 bands at k=0. Tensile strain opens an energy gap, compressive strain shifts the touching points of the valence- and conduction band to positions in the Brillouin zone with finite k. Such a situation has been realized for the first time in the course of this work. For QWs in the inverted regime, it is demonstrated that compressive strain can be used to significantly enhance the thermal energy gap of the two-dimensional electron gas (2DEG). An examination of the temperature dependence of the subband ordering in QWs revealed that the band gap is only temperature-stable for appropriate sample parameters and temperature regimes. The band inversion is always lifted for sufficiently high temperatures. An enhancement of the stability of quantum-spin-Hall edge state conductance is expected for enlarged band gaps. Detailed low-temperature magnetotransport studies have been carried out on QWs and bulk layers. The Fermi energy in the 2DEG has been adjusted by means of a top gate electrode. The strain-induced transition from semi-metallic to semiconducting characteristics in wide QWs was shown. The magnitude of the semi-metallic overlap of valence- and conduction band was determined by an analysis of the two-carrier conductance and is in agreement with band structure calculations. The band gap of the semiconducting sample was determined by measurements of the temperature dependence of the conductance at the charge-neutrality point. The influence of the band gap on the stability of QSH edge state conductance has been investigated on a set of six samples. The band gap of the set spans a range of 10 to 55 meV. The latter value has been achieved in a highly compressively strained QW, has been confirmed by temperature-dependent conductance measurements, and is the highest ever reported in the inverted regime. Studies of the carrier mobility reveal a degradation of the sample quality with increasing Zn-fraction in the

Strain-engineering of the topological insulator HgTe

Energy Technology Data Exchange (ETDEWEB)

Leubner, Philipp

2017-07-24

thickness of at least 50 nm) was demonstrated as well. Strain in bulk layers lifts the degeneracy of the Γ{sub 8} bands at k=0. Tensile strain opens an energy gap, compressive strain shifts the touching points of the valence- and conduction band to positions in the Brillouin zone with finite k. Such a situation has been realized for the first time in the course of this work. For QWs in the inverted regime, it is demonstrated that compressive strain can be used to significantly enhance the thermal energy gap of the two-dimensional electron gas (2DEG). An examination of the temperature dependence of the subband ordering in QWs revealed that the band gap is only temperature-stable for appropriate sample parameters and temperature regimes. The band inversion is always lifted for sufficiently high temperatures. An enhancement of the stability of quantum-spin-Hall edge state conductance is expected for enlarged band gaps. Detailed low-temperature magnetotransport studies have been carried out on QWs and bulk layers. The Fermi energy in the 2DEG has been adjusted by means of a top gate electrode. The strain-induced transition from semi-metallic to semiconducting characteristics in wide QWs was shown. The magnitude of the semi-metallic overlap of valence- and conduction band was determined by an analysis of the two-carrier conductance and is in agreement with band structure calculations. The band gap of the semiconducting sample was determined by measurements of the temperature dependence of the conductance at the charge-neutrality point. The influence of the band gap on the stability of QSH edge state conductance has been investigated on a set of six samples. The band gap of the set spans a range of 10 to 55 meV. The latter value has been achieved in a highly compressively strained QW, has been confirmed by temperature-dependent conductance measurements, and is the highest ever reported in the inverted regime. Studies of the carrier mobility reveal a degradation of the sample

Tunable band structures of polycrystalline graphene by external and mismatch strains

Institute of Scientific and Technical Information of China (English)

Jiang-Tao Wu; Xing-Hua Shi; Yu-Jie Wei

2012-01-01

Lacking a band gap largely limits the application of graphene in electronic devices.Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene.Here,we investigate the band structure of polycrystalline graphene tuned by externally imposed strains and intrinsic mismatch strains at the GB by density functional theory (DFT) calculations.We found that graphene with symmetrical GBs typically has zero band gap even with large uniaxial and biaxial strain.However,some particular asymmetrical GBs can open a band gap in graphene and their band structures can be substantially tuned by external strains.A maximum band gap about 0.19 eV was observed in matched-armchair GB (5,5) | (3,7) with a misorientation of θ =13° when the applied uniaxial strain increases to 9％.Although mismatch strain is inevitable in asymmetrical GBs,it has a small influence on the band gap of polycrystalline graphene.

Strain-induced topological magnon phase transitions: applications to kagome-lattice ferromagnets

Science.gov (United States)

Owerre, S. A.

2018-06-01

A common feature of topological insulators is that they are characterized by topologically invariant quantity such as the Chern number and the index. This quantity distinguishes a nontrivial topological system from a trivial one. A topological phase transition may occur when there are two topologically distinct phases, and it is usually defined by a gap closing point where the topologically invariant quantity is ill-defined. In this paper, we show that the magnon bands in the strained (distorted) kagome-lattice ferromagnets realize an example of a topological magnon phase transition in the realistic parameter regime of the system. When spin–orbit coupling (SOC) is neglected (i.e. no Dzyaloshinskii–Moriya interaction), we show that all three magnon branches are dispersive with no flat band, and there exists a critical point where tilted Dirac and semi-Dirac point coexist in the magnon spectra. The critical point separates two gapless magnon phases as opposed to the usual phase transition. Upon the inclusion of SOC, we realize a topological magnon phase transition point at the critical strain , where D and J denote the perturbative SOC and the Heisenberg spin exchange interaction respectively. It separates two distinct topological magnon phases with different Chern numbers for and for . The associated anomalous thermal Hall conductivity develops an abrupt change at , due to the divergence of the Berry curvature in momentum space. The proposed topological magnon phase transition is experimentally feasible by applying external perturbations such as uniaxial strain or pressure.

Valence band variation in Si (110) nanowire induced by a covered insulator

International Nuclear Information System (INIS)

Hong-Hua, Xu; Xiao-Yan, Liu; Yu-Hui, He; Gang, Du; Ru-Qi, Han; Jin-Feng, Kang; Chun, Fan; Ai-Dong, Sun

2010-01-01

In this work, we investigate strain effects induced by the deposition of gate dielectrics on the valence band structures in Si (110) nanowire via the simulation of strain distribution and the calculation of a generalized 6×6k·p strained valence band. The nanowire is surrounded by the gate dielectric. Our simulation indicates that the strain of the amorphous SiO 2 insulator is negligible without considering temperature factors. On the other hand, the thermal residual strain in a nanowire with amorphous SiO 2 insulator which has negligible lattice misfit strain pushes the valence subbands upwards by chemical vapour deposition and downwards by thermal oxidation treatment. In contrast with the strain of the amorphous SiO 2 insulator, the strain of the HfO 2 gate insulator in Si (110) nanowire pushes the valence subbands upwards remarkably. The thermal residual strain by HfO 2 insulator contributes to the up-shifting tendency. Our simulation results for valence band shifting and warping in Si nanowires can provide useful guidance for further nanowire device design. (classical areas of phenomenology)

On the possibility of contact-induced spin polarization in interfaces of armchair nanotubes with transition metal substrates

Energy Technology Data Exchange (ETDEWEB)

Kuzubov, Alexander A. [Siberian Federal University, 79 Svobodny Prospect, 660041 Krasnoyarsk (Russian Federation); Kirensky Institute of Physics, 50 Akademgorodok, 660036 Krasnoyarsk (Russian Federation); Kovaleva, Evgenia A., E-mail: kovaleva.evgeniya1991@mail.ru [Siberian Federal University, 79 Svobodny Prospect, 660041 Krasnoyarsk (Russian Federation); Kirensky Institute of Physics, 50 Akademgorodok, 660036 Krasnoyarsk (Russian Federation); Tomilin, Felix N.; Mikhaleva, Natalya S.; Kuklin, Artem V. [Siberian Federal University, 79 Svobodny Prospect, 660041 Krasnoyarsk (Russian Federation); Kirensky Institute of Physics, 50 Akademgorodok, 660036 Krasnoyarsk (Russian Federation)

2015-12-15

The interaction between armchair carbon and boron nitride nanotubes (NT) with ferromagnetic transition metal (TM) surfaces, namely, Ni(111) and Co(0001), was studied by means of density functional theory. Different configurations of composite compartments mutual arrangement were considered. Partial densities of states and spin density spatial distribution of optimized structures were investigated. Influence of ferromagnetic substrate on nanotubes’ electronic properties was discussed. The values of spin polarization magnitude at the Fermi level are also presented and confirm the patterns of spin density spatial distribution. - Highlights: • Interaction of armchair nanotubes with ferromagnetic metal surfaces was investigated. • Different configurations of nanotube's location were considered. • For all nanotubes the energy difference between configurations is negligible. • Nanotubes were found to be more or less spin-polarized regarding to the configuration. • BN nanotubes demonstrate vanishing of the band gap and contact-induced conductivity.

Spin-polarized photoemission from SiGe heterostructures

Energy Technology Data Exchange (ETDEWEB)

Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

2013-12-04

We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

Enhanced thermo-mechanical performance and strain-induced ...

Indian Academy of Sciences (India)

Enhanced thermo-mechanical performance and strain-induced band gap reduction of TiO2@PVC nanocomposite films ... School of Chemical Engineering, Yeungnam University, Gyeongsan 712-749, Republic of Korea; School of Mechanical Engineering, Yeungnam University, Gyeongsan 712-749, Republic of Korea ...

Pseudo-spin band in the odd-odd nucleus sup 1 sup 7 sup 2 Lu

CERN Document Server

Venkova, T; Gast, W; Podsvirova, E O; Jäger, H M; Mihailescu, L; Bazzacco, D; Menegazzo, R; Lunardi, S; Alvarez, C R; Ur, C; Martínez, T; Angelis, G D; Axiotis, M; Napoli, D; Urban, W; Rzaca-Urban, T; Frauendorf, S

2003-01-01

High-spin states in the odd-odd nucleus sup 1 sup 7 sup 2 Lu have been populated in a sup 1 sup 7 sup 0 Er( sup 7 Li,5n) reaction and the emitted gamma-radiation was detected with the GASP array. Two sequences of a new identical band have been observed with the transition energies in the favoured and unfavoured sequences being identical within approx 3 keV at low spins and approx 1 keV at high spins over the whole observed spin range. An interpretation as a pseudo-spin singlet band of pi 1/2 sup - [541] x nu 1/2 sup - [420] configuration is proposed. It represents the best example of a pseudo-spin singlet band in normal deformed nuclei known until now.

Spin dynamics of light-induced charge separation in composites of semiconducting polymers and PC60BM revealed using Q-band pulse EPR.

Science.gov (United States)

Lukina, E A; Suturina, E; Reijerse, E; Lubitz, W; Kulik, L V

2017-08-23

Light-induced processes in composites of semiconducting polymers and fullerene derivatives have been widely studied due to their usage as active layers of organic solar cells. However the process of charge separation under light illumination - the key process of an organic solar cell is not well understood yet. Here we report a Q-band pulse electron paramagnetic resonance study of composites of the fullerene derivative PC 60 BM ([6,6]-phenyl-C 61 -butyric acid methyl ester) with different p-type semiconducting polymers regioregular and regiorandom P3HT (poly(3-hexylthiophene-2,5-diyl), MEH-PPV (poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]), PCDTBT (poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)]), PTB7 (poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl}))), resulting in a detailed description of the in-phase laser flash-induced electron spin echo (ESE) signal. We found that in organic donor-acceptor composites the laser flash simultaneously induces species of two types: a polymer˙ + /fullerene˙ - spin-correlated polaron pair (SCPP) with an initial singlet spin state and (nearly) free polymer˙ + and fullerene˙ - species with non-equilibrium spin polarization. Species of the first type (SCPP) are well-known for polymer/fullerene blends and are usually associated with a charge-separated state. Also, spin polarization of long-living free species (polarons in deep traps) is affected by the laser flash, which is the third contribution to the flash-induced ESE signal. A protocol for extracting the in-phase ESE signal of the SCPP based on the dependence of the microwave nutation frequency on the strength of the spin coupling within the polaron pair was developed. Nutation experiments revealed an unusual pattern of the SCPP in RR-P3HT/PC 60 BM composites, from which the strength of the exchange interaction between the polymer

Spin-splitting in p-type Ge devices

Energy Technology Data Exchange (ETDEWEB)

Holmes, S. N., E-mail: s.holmes@crl.toshiba.co.uk; Newton, P. J.; Llandro, J.; Mansell, R.; Barnes, C. H. W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Morrison, C.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2016-08-28

Compressively strained Ge quantum well devices have a spin-splitting in applied magnetic field that is entirely consistent with a Zeeman effect in the heavy hole valence band. The spin orientation is determined by the biaxial strain in the quantum well with the relaxed SiGe buffer layers and is quantized in the growth direction perpendicular to the conducting channel. The measured spin-splitting in the resistivity ρ{sub xx} agrees with the predictions of the Zeeman Hamiltonian where the Shubnikov-deHaas effect exhibits a loss of even filling factor minima in the resistivity ρ{sub xx} with hole depletion from a gate field, increasing disorder or increasing temperature. There is no measurable Rashba spin-orbit coupling irrespective of the structural inversion asymmetry of the confining potential in low p-doped or undoped Ge quantum wells from a density of 6 × 10{sup 10} cm{sup −2} in depletion mode to 1.7 × 10{sup 11} cm{sup −2} in enhancement.

Light-Induced Type-II Band Inversion and Quantum Anomalous Hall State in Monolayer FeSe

Science.gov (United States)

Wang, Z. F.; Liu, Zhao; Yang, Jinlong; Liu, Feng

2018-04-01

Coupling a quantum anomalous Hall (QAH) state with a superconducting state offers an attractive approach to detect the signature alluding to a topological superconducting state [Q. L. He et al., Science 357, 294 (2017), 10.1126/science.aag2792], but its explanation could be clouded by disorder effects in magnetic doped QAH materials. On the other hand, an antiferromagnetic (AFM) quantum spin Hall (QSH) state is identified in the well-known high-temperature 2D superconductor of monolayer FeSe [Z. F. Wang et al., Nat. Mater. 15, 968 (2016), 10.1038/nmat4686]. Here, we report a light-induced type-II band inversion (BI) and a QSH-to-QAH phase transition in the monolayer FeSe. Depending on the handedness of light, a spin-tunable QAH state with a high Chern number of ±2 is realized. In contrast to the conventional type-I BI resulting from intrinsic spin-orbital coupling (SOC), which inverts the band an odd number of times and respects time reversal symmetry, the type-II BI results from a light-induced handedness-dependent effective SOC, which inverts the band an even number of times and does not respect time reversal symmetry. The interplay between these two SOC terms makes the spin-up and -down bands of an AFM QSH state respond oppositely to a circularly polarized light, leading to the type-II BI and an exotic topological phase transition. Our finding affords an exciting opportunity to detect Majorana fermions in one single material without magnetic doping.

Amplification of transcutaneous and percutaneous bone-conduction devices with a test-band in an induced model of conductive hearing loss.

Science.gov (United States)

Park, Marn Joon; Lee, Jae Ryung; Yang, Chan Joo; Yoo, Myung Hoon; Jin, In Suk; Choi, Chi Ho; Park, Hong Ju

2016-11-01

Transcutaneous devices have a disadvantage, the dampening effect by soft tissue between the bone and devices. We investigated hearing outcomes with percutaneous and transcutaneous devices using test-bands in an induced unilateral conductive hearing loss. Comparison of hearing outcomes of two devices in the same individuals. The right ear was plugged in 30 subjects and a test-band with devices (Cochlear™ Baha® BP110 Power and Sophono® Alpha-2 MPO™) was applied on the right mastoid tip with the left ear masked. Sound-field thresholds, speech recognition thresholds (SRTs), and word recognition scores (WRSs) were compared. Aided thresholds of Sophono were significantly better than those of Baha at most frequencies. Sophono WRSs (86 ± 12%) at 40 dB SPL and SRTs (14 ± 5 dB HL) were significantly better than those (73 ± 24% and 23 ± 8 dB HL) of Baha. However, Sophono WRSs (98 ± 3%) at 60 dB SPL did not differ from Baha WRSs (95 ± 12%). Amplifications of the current transcutaneous device were not inferior to those of percutaneous devices with a test-band in subjects with normal bone-conduction thresholds. Since the percutaneous devices can increase the gain when fixed to the skull by eliminating the dampening effect, both devices are expected to provide sufficient hearing amplification.

Strain engineering of WS2, WSe2, and WTe2

KAUST Repository

Amin, Bin

2014-01-01

We perform first-principles calculations to investigate the structural, electronic, and vibrational properties of WS2, WSe2, and WTe2 monolayers, taking into account the strong spin orbit coupling. A transition from a direct to an indirect band gap is achieved for compressive strain of 1% for WS2, 1.5% for WSe2, and 2% for WTe 2, while the nature of the band gap remains direct in the case of tensile strain. The size of the band gap passes through a maximum under compressive strain and decreases monotonically under tensile strain. A strong spin splitting is found for the valence band in all three compounds, which is further enhanced by tensile strain. The mobility of the electrons grows along the series WS2 < WSe2 < WTe2. This journal is © the Partner Organisations 2014.

Rotational bands terminating at maximal spin in the valence space

Energy Technology Data Exchange (ETDEWEB)

Ragnarsson, I.; Afanasjev, A.V. [Lund Institute of Technology (Sweden)

1996-12-31

For nuclei with mass A {le} 120, the spin available in {open_quotes}normal deformation configurations{close_quotes} is experimentally accessible with present detector systems. Of special interest are the nuclei which show collective features at low or medium-high spin and where the corresponding rotational bands with increasing spin can be followed in a continuous way to or close to a non-collective terminating state. Some specific features in this context are discussed for nuclei in the A = 80 region and for {sup 117,118}Xe.

Spin heat accumulation induced by tunneling from a ferromagnet.

Science.gov (United States)

Vera-Marun, I J; van Wees, B J; Jansen, R

2014-02-07

An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

Strain effects on the optical conductivity of gapped graphene in the presence of Holstein phonons beyond the Dirac cone approximation

Energy Technology Data Exchange (ETDEWEB)

Yarmohammadi, Mohsen, E-mail: m.yarmohammadi69@gmail.com [Young Researchers and Elite Club, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of)

2016-08-15

In this paper we study the optical conductivity and density of states (DOS) of doped gapped graphene beyond the Dirac cone approximation in the presence of electron-phonon (e-ph) interaction under strain, i.e., within the framework of a full π-band Holstein model, by using the Kubo linear response formalism that is established upon the retarded self-energy. A new peak in the optical conductivity for a large enough e-ph interaction strength is found which is associated to transitions between the midgap states and the Van Hove singularities of the main π-band. Optical conductivity decreases with strain and at large strains, the system has a zero optical conductivity at low energies due to optically inter-band excitations through the limit of zero doping. As a result, the Drude weight changes with e-ph interaction, temperature and strain. Consequently, DOS and optical conductivity remains stable with temperature at low e-ph coupling strengths.

A tight binding model study of tunneling conductance spectra of spin and orbitally ordered CMR manganites

Science.gov (United States)

Panda, Saswati; Sahoo, D. D.; Rout, G. C.

2018-04-01

We report here a tight binding model for colossal magnetoresistive (CMR) manganites to study the pseudo gap (PG) behavior near Fermi level. In the Kubo-Ohata type DE model, we consider first and second nearest neighbor interactions for transverse spin fluctuations in core band and hopping integrals in conduction band, in the presence of static band Jahn-Teller distortion. The model Hamiltonian is solved using Zubarev's Green's function technique. The electron density of states (DOS) is found out from the Green's functions. We observe clear PG near Fermi level in the electron DOS.

Spin-polarized ballistic conduction through correlated Au-NiMnSb-Au heterostructures

KAUST Repository

Morari, C.

2017-11-20

We examine the ballistic conduction through Au-NiMnSb-Au heterostructures consisting of up to four units of the half-metallic NiMnSb in the scattering region, using density functional theory (DFT) methods. For a single NiMnSb unit the transmission function displays a spin polarization of around 50% in a window of 1eV centered around the Fermi level. By increasing the number of layers, an almost complete spin polarization of the transmission is obtained in this energy range. Supplementing the DFT calculations with local electronic interactions, of Hubbard-type on the Mn sites, leads to a hybridization between the interface and many-body states. The significant reduction of the spin polarization seen in the density of states is not apparent in the spin polarization of the conduction electron transmission, which suggests that the hybridized interface and many-body induced states are localized.

Internal-strain effect on the valence band of strained silicon and its correlation with the bond angles

Energy Technology Data Exchange (ETDEWEB)

Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Yanagisawa, Susumu; Kadekawa, Yukihiro [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

2014-02-14

By means of the first-principles density-functional theory, we investigate the effect of relative atom displacement in the crystal unit cell, namely, internal strain on the valence-band dispersion of strained silicon, and find close correlation of this effect with variation in the specific bond angles due to internal strain. We consider the [111] ([110]) band dispersion for (111) ((110)) biaxial tensility and [111] ([110]) uniaxial compression, because remarkably small values of hole effective mass m* can be obtained in this dispersion. Under the practical condition of no normal stress, biaxial tensility (uniaxial compression) involves additional normal compression (tensility) and internal strain. With an increase in the internal-strain parameter, the energy separation between the highest and second-highest valence bands becomes strikingly larger, and the highest band with conspicuously small m* extends remarkably down to a lower energy region, until it intersects or becomes admixed with the second band. This is closely correlated with the change in the specific bond angles, and this change can reasonably explain the above enlargement of the band separation.

Current-induced Rashba spin orbit torque in silicene

Energy Technology Data Exchange (ETDEWEB)

Chen, Ji, E-mail: muze7777@hdu.edu.cn [Department of Mathematics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Peng, Yingzi [Department of Physics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Center for Integrated Spintronic Devices, Hangzhou Dianzi University, Hangzhou 310018 (China); Zhou, Jie [Department of Mathematics, School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China)

2017-06-15

Highlights: • The spin dynamics of a ferromagnetic layer coupled to a silicene is investigated. • The Rashba spin orbit torque is obtained and the well-known LLG equation is modified. • The explicit forms of spin orbit torques in Domain Wall and vortex is also obtained. - Abstract: We study theoretically the spin torque of a ferromagnetic layer coupled to a silicene in the presence of the intrinsic Rashba spin orbit coupling (RSOC) effect. By using gauge field method, we find that under the applied current, the RSOC can induce an effective field which will result in the spin precession of conduction electron without applying any magnetic field. We also derive the spin torques due to the RSOC, which generalize the Landau-Lifshitz-Gilbert (LLG) equation. The spin torques are related to the applied current, the carrier density and Rashba strength of the system.

Gate tunable spin transport in graphene with Rashba spin-orbit coupling

Science.gov (United States)

Tan, Xiao-Dong; Liao, Xiao-Ping; Sun, Litao

2016-10-01

Recently, it attracts much attention to study spin-resolved transport properties in graphene with Rashba spin-orbit coupling (RSOC). One remarkable finding is that Klein tunneling in single layer graphene (SLG) with RSOC (SLG + R for short below) behaves as in bi-layer graphene (BLG). Based on the effective Dirac theory, we reconsider this tunneling problem and derive the analytical solution for the transmission coefficients. Our result shows that Klein tunneling in SLG + R and BLG exhibits completely different behaviors. More importantly, we find two new transmission selection rules in SLG + R, i.e., the single band to single band (S → S) and the single band to multiple bands (S → M) transmission regimes, which strongly depend on the relative height among Fermi level, RSOC, and potential barrier. Interestingly, in the S → S transmission regime, only normally incident electrons have capacity to pass through the barrier, while in the S → M transmission regime the angle-dependent tunneling becomes very prominent. Using the transmission coefficients, we also derive spin-resolved conductance analytically, and conductance oscillation with the increasing barrier height and zero conductance gap are found in SLG + R. The present study offers new insights and opportunities for developing graphene-based spin devices.

Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

Science.gov (United States)

Thorpe, B.; Kalna, K.; Langbein, F. C.; Schirmer, S.

2017-12-01

Spin-based logic devices could operate at a very high speed with a very low energy consumption and hold significant promise for quantum information processing and metrology. We develop a spintronic device simulator by combining an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with spin transport based on a Bloch equation model and a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings. It is employed to simulate a spin field effect transistor operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a 25 nm gate length In0.7Ga0.3As metal-oxide-semiconductor field-effect transistor with a CMOS compatible architecture. We observe a non-uniform decay of the net magnetization between the source and the gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and the drain. We demonstrate a coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current can be increased twofold by the strain induced into the channel.

Electrical tuning of the band alignment and magnetoconductance in an n-type ferromagnetic semiconductor (In,Fe)As-based spin-Esaki diode

Science.gov (United States)

Anh, Le Duc; Hai, Pham Nam; Tanaka, Masaaki

2018-03-01

We report a strong bias dependence of the magnetoconductance (MC) of a spin-Esaki diode composed of n+-type ferromagnetic semiconductor (FMS) (In,Fe)As and p+-type Be doped InAs grown on a p+-InAs (001) substrate by molecular beam epitaxy. When the bias voltage V is increased above 450 mV in the forward bias, we found that the MC, measured at 3.5 K under a magnetic field H of 1 T in the in-plane [110] direction, changes its sign from positive to negative and its magnitude rises rapidly from 0.5% at V fluid model, we explain both the magnitude and the anisotropy of the MC based on the evolution of the spin-Esaki diode's band profile with V. This analysis provides insights into the density of states and spin-polarization of the conduction band and the Fe-related impurity band in n-type FMS (In,Fe)As.

Spin-dependent electron many-body effects in GaAs

Science.gov (United States)

Nemec, P.; Kerachian, Y.; van Driel, H. M.; Smirl, Arthur L.

2005-12-01

Time- and polarization-resolved differential transmission measurements employing same and oppositely circularly polarized 150fs optical pulses are used to investigate spin characteristics of conduction band electrons in bulk GaAs at 295K . Electrons and holes with densities in the 2×1016cm-3-1018cm-3 range are generated and probed with pulses whose center wavelength is between 865 and 775nm . The transmissivity results can be explained in terms of the spin sensitivity of both phase-space filling and many-body effects (band-gap renormalization and screening of the Coulomb enhancement factor). For excitation and probing at 865nm , just above the band-gap edge, the transmissivity changes mainly reflect spin-dependent phase-space filling which is dominated by the electron Fermi factors. However, for 775nm probing, the influence of many-body effects on the induced transmission change are comparable with those from reduced phase space filling, exposing the spin dependence of the many-body effects. If one does not take account of these spin-dependent effects one can misinterpret both the magnitude and time evolution of the electron spin polarization. For suitable measurements we find that the electron spin relaxation time is 130ps .

Strain cupling of a nitrogen-vacancy center spin to a diamond mechanical oscillator

OpenAIRE

Teissier, J.; Barfuss, A.; Appel, P.; Neu, E.; Maletinsky, P.

2014-01-01

We report on single electronic spins coupled to the motion of mechanical resonators by a novel mechanism based on crystal strain. Our device consists of single-crystal diamond cantilevers with embedded nitrogen-vacancy center spins. Using optically detected electron spin resonance, we determine the unknown spin-strain coupling constants and demonstrate that our system resides well within the resolved sideband regime. We realize coupling strengths exceeding 10 MHz under mechanical driving and ...

Photo-induced spin and valley-dependent Seebeck effect in the low-buckled Dirac materials

Science.gov (United States)

Mohammadi, Yawar

2018-04-01

Employing the Landauer-Buttiker formula we investigate the spin and valley dependence of Seebeck effect in low-buckled Dirac materials (LBDMs), whose band structure are modulated by local application of a gate voltage and off-resonant circularly polarized light. We calculate the charge, spin and valley Seebeck coefficients of an irradiated LBDM as functions of electronic doping, light intensity and the amount of the electric field in the linear regime. Our calculation reveal that all Seebeck coefficients always shows an odd features with respect to the chemical potential. Moreover, we show that, due to the strong spin-orbit coupling in the LBDMs, the induced thermovoltage in the irradiated LBDMs is spin polarized, and can also become valley polarized if the gate voltage is applied too. It is also found that the valley (spin) polarization of the induced thermovoltage could be inverted by reversing the circular polarization of light or reversing the direction the electric field (only by reversing the circular polarization of light).

Spin heat capacity of monolayer and AB-stacked bilayer MoS2 in the presence of exchange magnetic field

Science.gov (United States)

Hoi, Bui Dinh; Yarmohammadi, Mohsen; Mirabbaszadeh, Kavoos

2017-04-01

Dirac theory and Green's function technique are carried out to compute the spin dependent band structures and corresponding electronic heat capacity (EHC) of monolayer (ML) and AB-stacked bilayer (BL) molybdenum disulfide (MoS2) two-dimensional (2D) crystals. We report the influence of induced exchange magnetic field (EMF) by magnetic insulator substrates on these quantities for both structures. The spin-up (down) subband gaps are shifted with EMF from conduction (valence) band to valence (conduction) band at both Dirac points in the ML because of the spin-orbit coupling (SOC) which leads to a critical EMF in the K point and EHC returns to its initial states for both spins. In the BL case, EMF results split states and the decrease (increase) behavior of spin-up (down) subband gaps has been observed at both K and K‧ valleys which is due to the combined effect of SOC and interlayer coupling. For low and high EMFs, EHC of BL MoS2 does not change for spin-up subbands while increases for spin-down subbands.

Quantum spin transport in semiconductor nanostructures

Energy Technology Data Exchange (ETDEWEB)

Schindler, Christoph

2012-05-15

In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

Quantum spin transport in semiconductor nanostructures

International Nuclear Information System (INIS)

Schindler, Christoph

2012-01-01

In this work, we study and quantitatively predict the quantum spin Hall effect, the spin-orbit interaction induced intrinsic spin-Hall effect, spin-orbit induced magnetizations, and spin-polarized electric currents in nanostructured two-dimensional electron or hole gases with and without the presence of magnetic fields. We propose concrete device geometries for the generation, detection, and manipulation of spin polarization and spin-polarized currents. To this end a novel multi-band quantum transport theory, that we termed the multi-scattering Buettiker probe model, is developed. The method treats quantum interference and coherence in open quantum devices on the same footing as incoherent scattering and incorporates inhomogeneous magnetic fields in a gauge-invariant and nonperturbative manner. The spin-orbit interaction parameters that control effects such as band energy spin splittings, g-factors, and spin relaxations are calculated microscopically in terms of an atomistic relativistic tight-binding model. We calculate the transverse electron focusing in external magnetic and electric fields. We have performed detailed studies of the intrinsic spin-Hall effect and its inverse effect in various material systems and geometries. We find a geometry dependent threshold value for the spin-orbit interaction for the inverse intrinsic spin-Hall effect that cannot be met by n-type GaAs structures. We propose geometries that spin polarize electric current in zero magnetic field and analyze the out-of-plane spin polarization by all electrical means. We predict unexpectedly large spin-orbit induced spin-polarization effects in zero magnetic fields that are caused by resonant enhancements of the spin-orbit interaction in specially band engineered and geometrically designed p-type nanostructures. We propose a concrete realization of a spin transistor in HgTe quantum wells, that employs the helical edge channel in the quantum spin Hall effect.

Spin properties of black phosphorus and phosphorene, and their prospects for spincalorics

Science.gov (United States)

Kurpas, Marcin; Gmitra, Martin; Fabian, Jaroslav

2018-05-01

Semiconducting black phosphorus attracts a lot of attention due to its extraordinary electronic properties. Its application to spincalorics requires the knowledge about the spin and thermal properties. Here, we describe first principles calculations of the spin–orbit coupling and spin scattering in phosphorene and bulk black phosphorus. We find that the intrinsic spin–orbit coupling is of the order of 20 meV for the valence and conduction band, both for phosphorene and bulk black phosphorus, and induces spin mixing with the probability b2 ≈ 10-5 –10‑4. A strong anisotropy of b 2 is observed. The calculated Elliott–Yafet spin relaxation times reach nanoseconds for realistic values of the momentum relaxation times. The extrinsic spin–orbit coupling, enabling the D’yakonov–Perel’ spin relaxation mechanism, is studied for phosphorene by application of a transverse electric field. We observe a strong anisotropy of the extrinsic effects for the valence band and much weaker for the conduction band. It is shown, that for small enough electric fields the spin relaxation is dominated by the Elliott–Yafet mechanism, while the D’yakonov–Perel’ matters for higher electric fields. Our theoretical results stay in a good agreement with the experimental findings, and indicates that long spin lifetimes in black phosphorus and phosphorene makes them prospective materials for spincalorics and spintronics.

Intrinsic properties of high-spin band structures in triaxial nuclei

Science.gov (United States)

Jehangir, S.; Bhat, G. H.; Sheikh, J. A.; Palit, R.; Ganai, P. A.

2017-12-01

The band structures of 68,70Ge, 128,130,132,134Ce and 132,134,136,138Nd are investigated using the triaxial projected shell model (TPSM) approach. These nuclei depict forking of the ground-state band into several s-bands and in some cases, both the lowest two observed s-bands depict neutron or proton character. It was discussed in our earlier work that this anomalous behaviour can be explained by considering γ-bands based on two-quasiparticle configurations. As the parent band and the γ-band built on it have the same intrinsic structure, g-factors of the two bands are expected to be similar. In the present work, we have undertaken a detailed investigation of g-factors for the excited band structures of the studied nuclei and the available data for a few high-spin states are shown to be in fair agreement with the predicted values.

Symmetry analysis of strain, electric and magnetic fields in the Bi2Se3-class of topological insulators

Science.gov (United States)

Rosdahl Brems, Mathias; Paaske, Jens; Lunde, Anders Mathias; Willatzen, Morten

2018-05-01

Based on group theoretical arguments we derive the most general Hamiltonian for the Bi2Se3-class of materials including terms to third order in the wave vector, first order in electric and magnetic fields, first order in strain and first order in both strain and wave vector. We determine analytically the effects of strain on the electronic structure of Bi2Se3. For the most experimentally relevant surface termination we analytically derive the surface state (SS) spectrum, revealing an anisotropic Dirac cone with elliptical constant energy contours giving rise to a direction-dependent group velocity. The spin-momentum locking of strained Bi2Se3 is shown to be modified. Hence, strain control can be used to manipulate the spin degree of freedom via the spin–orbit coupling. We show that for a thin film of Bi2Se3 the SS band gap induced by coupling between the opposite surfaces changes opposite to the bulk band gap under strain. Tuning the SS band gap by strain, gives new possibilities for the experimental investigation of the thickness dependent gap and optimization of optical properties relevant for, e.g., photodetector and energy harvesting applications. We finally derive analytical expressions for the effective mass tensor of the Bi2Se3 class of materials as a function of strain and electric field.

New high spin states and band termination in 83Y and 84Zr

International Nuclear Information System (INIS)

Johnson, T.D.; Aprahamian, A.; Lister, C.J.; Blumenthal, D.J.; Crowell, B.; Chowdhury, P.; Fallon, P.; Machiavelli, A.O.

1997-01-01

The gamma decay of high spin yrast states in 83 Y up to I π =59/2 + and 53/2 - have been observed using the reaction 58 Ni( 29 Si,3p) at 110 MeV and the Gammasphere Early Implementation Array. The level scheme has been substantially extended due to the observations of several new transitions in all of the bands. A sequence of transitions feeding into the positive parity yrast band above I π =47/2 + seems to be consistent with a noncollective oblate structure expected at these high spins. A similar cascade is found in the data for 84 Zr. A new forking of the favored negative parity band is found which may be due to neutron alignment polarizing the core to a different shape. This suggests that the open-quotes isomeric close-quote close-quote band in 83 Y, for which one more connecting transition was found, is of a similar nature to other high-K bands found in this region. Lifetime measurements in the unfavored negative parity band are consistent with cranking calculations which predict a nearly oblate shape with a deformation parameter β 2 ∼0.2. A qualitative analysis of line shapes at very high spins suggests the persistence of collectivity in the yrast sequence to the highest excitations seen. copyright 1997 The American Physical Society

An enhancement of spin polarization by multiphoton pumping in semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

2011-08-15

Highlights: {yields} Multiphoton pumping and spin generation in semiconductors. {yields} Optical selection rules for inter-band transitions. {yields} Calculations of spin polarization using band-energy model and the second order perturbation theory. {yields} Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

An enhancement of spin polarization by multiphoton pumping in semiconductors

International Nuclear Information System (INIS)

Miah, M. Idrish

2011-01-01

Highlights: → Multiphoton pumping and spin generation in semiconductors. → Optical selection rules for inter-band transitions. → Calculations of spin polarization using band-energy model and the second order perturbation theory. → Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

Effect of different conductivity between the spin polarons on spin injection in a ferromagnet/organic semiconductor system

International Nuclear Information System (INIS)

Mi Yilin; Zhang Ming; Yan Hui

2008-01-01

Spin injection across ferromagnet/organic semiconductor system with finite width of the layers was studied theoretically considering spin-dependent conductivity in the organic-semiconductor. It was found that the spin injection efficiency is directly dependent on the difference between the conductivity of the up-spin and down-spin polarons in the spin-injected organic system. Furthermore, the finite width of the structure, interfacial electrochemical-potential and conductivity mismatch have great influence on the spin injection process across ferromagnet/organic semiconductor interface

Two-dimensional silica: Structural, mechanical properties, and strain-induced band gap tuning

Energy Technology Data Exchange (ETDEWEB)

Gao, Enlai; Xie, Bo [Applied Mechanics Laboratory, Department of Engineering Mechanics, and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084 (China); Xu, Zhiping, E-mail: xuzp@tsinghua.edu.cn [Applied Mechanics Laboratory, Department of Engineering Mechanics, and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084 (China); State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016 (China)

2016-01-07

Two-dimensional silica is of rising interests not only for its practical applications as insulating layers in nanoelectronics, but also as a model material to understand crystals and glasses. In this study, we examine structural and electronic properties of hexagonal and haeckelite phases of silica bilayers by performing first-principles calculations. We find that the corner-sharing SiO{sub 4} tetrahedrons in these two phases are locally similar. The robustness and resilience of these tetrahedrons under mechanical perturbation allow effective strain engineering of the electronic structures with band gaps covering a very wide range, from of that for insulators, to wide-, and even narrow-gap semiconductors. These findings suggest that the flexible 2D silica holds great promises in developing nanoelectronic devices with strain-tunable performance, and lay the ground for the understanding of crystalline and vitreous phases in 2D, where bilayer silica provides an ideal test-bed.

Strain Effect on Electronic Structure and Work Function in α-Fe2O3 Films

Directory of Open Access Journals (Sweden)

Li Chen

2017-03-01

Full Text Available We investigate the electronic structure and work function modulation of α-Fe2O3 films by strain based on the density functional method. We find that the band gap of clean α-Fe2O3 films is a function of the strain and is influenced significantly by the element termination on the surface. The px and py orbitals keep close to Fermi level and account for a pronounced narrowing band gap under compressive strain, while unoccupied dz2 orbitals from conduction band minimum draw nearer to Fermi level and are responsible for the pronounced narrowing band gap under tensile strain. The spin polarized surface state, arising from localized dangling-bond states, is insensitive to strain, while the bulk band, especially for pz orbital, arising from extended Bloch states, is very sensitive to strain, which plays an important role for work function decreasing (increasing under compressive (tensile strain in Fe termination films. In particular, the work function in O terminated films is insensitive to strain because pz orbitals are less sensitive to strain than that of Fe termination films. Our findings confirm that the strain is an effective means to manipulate electronic structures and corrosion potential.

Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

International Nuclear Information System (INIS)

Tuğluoğlu, Nihat; Barış, Behzad; Gürel, Hatice; Karadeniz, Serdar; Yüksel, Ömer Faruk

2014-01-01

Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E U ) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions

Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

Energy Technology Data Exchange (ETDEWEB)

Tuğluoğlu, Nihat, E-mail: tugluo@gmail.com [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Barış, Behzad; Gürel, Hatice [Department of Physics, Faculty of Arts and Sciences, Giresun University, Gazipaşa Campus, Giresun 28100 (Turkey); Karadeniz, Serdar [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Yüksel, Ömer Faruk [Department of Physics, Faculty of Science, Selçuk University, Campus Konya 42075 (Turkey)

2014-01-05

Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E{sub U}) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions.

Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

International Nuclear Information System (INIS)

Lucovsky, G.; Fulton, C.C.; Zhang, Y.; Luning, J.; Edge, L.; Whitten, J.L.; Nemanich, R.J.; Schlom, D.G.; Afanase'v, V.V.

2005-01-01

X-ray absorption spectroscopy (XAS) is used to study conduction band edge electronic structure of high-k transition metal (TM) and trivalent lanthanide series rare earth (RE) oxide dielectrics. Empty TM/RE d-states are studied by intra-atomic transitions originating in core level spin-orbit split p-states, and conduction band states are studied in inter-atomic transitions which originate in the oxygen atom 1s core level state. In non-crystalline Zr and Hf silicate alloys, the local bonding symmetry, or crystal field splits these d-states into doubly and triply degenerate features. In nano-crystalline oxides, there are additional d-state splittings due to contributions of more distant neighbors that completely remove d-state degeneracies via the Jahn-Teller effect mechanism. This gives rise to highly localized band edge states that are electronically active in photoconductivity, internal photoemission, and act as bulk traps in metal oxide semiconductor (MOS) devices

Self-consistent, relativistic, ferromagnetic band structure of gadolinium

International Nuclear Information System (INIS)

Harmon, B.N.; Schirber, J.; Koelling, D.D.

1977-01-01

An initial self-consistent calculation of the ground state magnetic band structure of gadolinium is described. A linearized APW method was used which included all single particle relativistic effects except spin-orbit coupling. The spin polarized potential was obtained in the muffin-tin form using the local spin density approximation for exchange and correlation. The most striking and unorthodox aspect of the results is the position of the 4f spin-down ''bands'' which are required to float just on top of the Fermi level in order to obtain convergence. If the 4f states (l = 3 resonance) are removed from the occupied region of the conduction bands the magnetic moment is approximately .75 μ/sub B//atom; however, as the 4f spin-down states are allowed to find their own position they hybridize with the conduction bands at the Fermi level and the moment becomes smaller. Means of improving the calculation are discussed

Temperature dependence of spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/AlGaAs quantum wells.

Science.gov (United States)

Yu, Jinling; Cheng, Shuying; Lai, Yunfeng; Zheng, Qiao; Zhu, Laipan; Chen, Yonghai; Ren, Jun

2015-10-19

Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect (CPGE) at inter-band excitation have been experimentally investigated in InGaAs/AlGaAs quantum wells at a temperature range of 80 to 290 K. It is found that, the sign of Rashba-type current reverses at low temperatures, while that of Dresselhaus-type remains unchanged. The temperature dependence of ratio of Rashba and Dresselhaus spin-orbit coupling parameters, increasing from -6.7 to 17.9, is obtained, and the possible reasons are discussed. We also develop a model to extract the Rashba-type effective electric field at different temperatures. It is demonstrated that excitonic effect will significantly influence the Rashba-type CPGE, while it has little effect on Dresselhaus-type CPGE.

Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps

KAUST Repository

Mei, Yaochuan

2017-08-02

The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.

Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps.

Science.gov (United States)

Mei, Yaochuan; Diemer, Peter J; Niazi, Muhammad R; Hallani, Rawad K; Jarolimek, Karol; Day, Cynthia S; Risko, Chad; Anthony, John E; Amassian, Aram; Jurchescu, Oana D

2017-08-15

The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.

Mean-field study of correlation-induced antisymmetric spin-orbit coupling in a two-orbital honeycomb model

Science.gov (United States)

Hayami, Satoru; Kusunose, Hiroaki; Motome, Yukitoshi

2018-05-01

We investigate a two-orbital Hubbard model on a honeycomb structure, with a special focus on the antisymmetric spin-orbit coupling (ASOC) induced by symmetry breaking in the electronic degrees of freedom. By investigating the ground-state phase diagram by the mean-field approximation in addition to the analysis in the strong correlation limit, we obtain a variety of symmetry-broken phases that induce different types of effective ASOCs by breaking of spatial inversion symmetry. We find several unusual properties emergent from the ASOCs, such as a linear magnetoelectric effect in a spin-orbital ordered phase at 1/4 filling and a spin splitting in the band structure in charge ordered phases at 1/4 and 1/2 fillings. We also show that a staggered potential on the honeycomb structure leads to another type of ASOC, which gives rise to a valley splitting in the band structure at 1/2 filling. We discuss the experimental relevance of our results to candidate materials including transition metal dichalcogenides and trichalcogenides.

Strain-induced chiral magnetic effect in Weyl semimetals

International Nuclear Information System (INIS)

Cortijo, Alberto; Kharzeev, Dmitri; Vozmediano, Maria A. H.

2016-01-01

Here, we argue that strain applied to a time-reversal and inversion breaking Weyl semimetal in a magnetic field can induce an electric current via the chiral magnetic effect. A tight-binding model is used to show that strain generically changes the locations in the Brillouin zone but also the energies of the band touching points (tips of the Weyl cones). Since axial charge in a Weyl semimetal can relax via intervalley scattering processes, the induced current will decay with a time scale given by the lifetime of a chiral quasiparticle. Lastly, we estimate the strength and lifetime of the current for typical material parameters and find that it should be experimentally observable.

Spin-splitting calculation for zincblende semiconductors using an atomic bond-orbital model

International Nuclear Information System (INIS)

Kao, Hsiu-Fen; Lo, Ikai; Chiang, Jih-Chen; Wang, Wan-Tsang; Hsu, Yu-Chi; Wu, Chieh-Lung; Gau, Ming-Hong; Chen, Chun-Nan; Ren, Chung-Yuan; Lee, Meng-En

2012-01-01

We develop a 16-band atomic bond-orbital model (16ABOM) to compute the spin splitting induced by bulk inversion asymmetry in zincblende materials. This model is derived from the linear combination of atomic-orbital (LCAO) scheme such that the characteristics of the real atomic orbitals can be preserved to calculate the spin splitting. The Hamiltonian of 16ABOM is based on a similarity transformation performed on the nearest-neighbor LCAO Hamiltonian with a second-order Taylor expansion over k-vector at the Γ point. The spin-splitting energies in bulk zincblende semiconductors, GaAs and InSb, are calculated, and the results agree with the LCAO and first-principles calculations. However, we find that the spin-orbit coupling between bonding and antibonding p-like states, evaluated by the 16ABOM, dominates the spin splitting of the lowest conduction bands in the zincblende materials.

Bands of respiratory rate and cloacal temperature for different broiler chicken strains

Directory of Open Access Journals (Sweden)

Sheila Tavares Nascimento

2012-05-01

Full Text Available The objective of this investigation was to estimate ideal bands of respiratory rate and cloacal temperature for broiler chicken strains during the rearing period and to evaluate the influence of time of exposure on bird physiological variables under different thermal stress conditions. The research was conducted in a climatic chamber during the six weeks of the rearing period, with Avian and Cobb strains exposed to two climatic conditions (comfort and stress, in three distinct times of exposure, in three conditions (before going to the chamber; at the end of exposure time; 30 minutes after the end of exposure, in four treatments: comfort with 60 minutes of exposure; stress with 30 minutes of exposure; stress with 60 minutes of exposure; stress with 90 minutes of exposure. Bands of respiratory rate and cloacal temperature were elaborated for both strains, for each one of the weeks of the rearing period. Strains differed, regardless of treatments and conditions adopted in the research on the third, fifth and sixth weeks of life in relation to the cloacal temperature. The Cobb strain is more tolerant to thermal stress in comparison with the Avian. There was difference for both variables between comfort and stress, but time of exposure to stress did not influence the physiological response of birds, except for cloacal temperature on the second week of life.

k-asymmetric spin splitting at the interface between transition metal ferromagnets and heavy metals

KAUST Repository

Grytsiuk, Sergii

2016-05-23

We systematically investigate the spin-orbit coupling-induced band splitting originating from inversion symmetry breaking at the interface between a Co monolayer and 4d (Tc, Ru, Rh, Pd, and Ag) or 5d (Re, Os, Ir, Pt, and Au) transition metals. In spite of the complex band structure of these systems, the odd-in-k spin splitting of the bands displays striking similarities with the much simpler Rashba spin-orbit coupling picture. We establish a clear connection between the overall strength of the odd-in-k spin splitting of the bands and the charge transfer between the d orbitals at the interface. Furthermore, we show that the spin splitting of the Fermi surface scales with the induced orbital moment, weighted by the spin-orbit coupling.

k-asymmetric spin splitting at the interface between transition metal ferromagnets and heavy metals

KAUST Repository

Grytsyuk, Sergiy; Belabbes, Abderrezak; Haney, Paul M.; Lee, Hyun-Woo; Lee, Kyung-Jin; Stiles, M. D.; Schwingenschlö gl, Udo; Manchon, Aurelien

2016-01-01

We systematically investigate the spin-orbit coupling-induced band splitting originating from inversion symmetry breaking at the interface between a Co monolayer and 4d (Tc, Ru, Rh, Pd, and Ag) or 5d (Re, Os, Ir, Pt, and Au) transition metals. In spite of the complex band structure of these systems, the odd-in-k spin splitting of the bands displays striking similarities with the much simpler Rashba spin-orbit coupling picture. We establish a clear connection between the overall strength of the odd-in-k spin splitting of the bands and the charge transfer between the d orbitals at the interface. Furthermore, we show that the spin splitting of the Fermi surface scales with the induced orbital moment, weighted by the spin-orbit coupling.

New bands and spin-parity assignments in 111Ru

International Nuclear Information System (INIS)

Urban, W.; Rzaca-Urban, T.; Droste, C.; Rohozinski, S.G.; Durell, J.L.; Phillips, W.R.; Smith, A.G.; Varley, B.J.; Schulz, N.; Ahmad, I.; Pinston, J.A.

2004-01-01

The 111 Ru nucleus, populated in the spontaneous fission of 248 Cm has been studied by means of prompt gamma spectroscopy using the EUROGAM2 array. Spin and parity assignments, based on angular correlations, linear polarization, and conversion coefficient measurements differ from those available in the literature. New bands are reported, which incorporate γ transitions seen previously but not placed in the scheme of 111 Ru or placed incorrectly. The bands are interpreted as neutron excitations into subshells originating predominantly from the h 11/2 , g 7/2 and s 1/2 spherical orbitals. The s 1/2 band, strongly mixed with the d 3/2 , d 5/2 and g 7/2 configurations, is observed for the first time in this region. (orig.)

Effect of ferromagnetic exchange field on band gap and spin ...

Indian Academy of Sciences (India)

Partha Goswami

2018-02-19

Feb 19, 2018 ... of an electric-field tunable band gap, but like graphene it is a better .... ate energy dispersion of the pristine, pure graphene. ...... The rotation is known as the Faraday .... pave the way to the efficient control of spin generation.

Strain-engineered band parameters of graphene-like SiC monolayer

International Nuclear Information System (INIS)

Behera, Harihar; Mukhopadhyay, Gautam

2014-01-01

Using full-potential density functional theory (DFT) calculations we show that the band gap and effective masses of charge carriers in SiC monolayer (ML-SiC) in graphene-like two-dimensional honeycomb structure are tunable by strain engineering. ML-SiC was found to preserve its flat 2D graphene-like structure under compressive strain up to 7%. A transition from indirect-to-direct gap-phase is predicted to occur for a strain value lying within the interval (1.11 %, 1.76%). In both gap-phases band gap decreases with increasing strain, although the rate of decrease is different in the two gap-phases. Effective mass of electrons show a non-linearly decreasing trend with increasing tensile strain in the direct gap-phase. The strain-sensitive properties of ML-SiC, may find applications in future strain-sensors, nanoelectromechanical systems (NEMS) and nano-optomechanical systems (NOMS) and other nano-devices

Dependence of the optical conductivity on the uniaxial and biaxial strains in black phosphorene

Science.gov (United States)

Yang, C. H.; Zhang, J. Y.; Wang, G. X.; Zhang, C.

2018-06-01

By using the Kubo formula, the optical conductivity of strained black phosphorene was studied. The anisotropic band dispersion gives rise to an orientation dependent optical conductivity. The energy gap can be tuned by the uniaxial and biaxial strains which can be observed from the interband optical conductivity polarized along the armchair (x ) direction. The preferential conducting direction is along the x direction. The dependence of the intraband optical conductivity along the zigzag (y ) direction on the Fermi energy and strain exhibits increasing or decreasing monotonously. However, along the x direction this dependence is complicated which originates from the carriers' inverse-direction movements obtained by two types of the nearest phosphorus atom interactions. The modification of the biaxial strain on the energy structure and optical-absorption property is more effective. The imaginary part of the total optical conductivity (Im σ ) can be negative around the threshold of the interband optical transition by modifying the chemical potential. Away from this frequency region, Im σ exhibits positive value. It can be used in the application of the surface plasmon propagations in multilayer dielectric structures.

Optical and electronic properties of 2 H -Mo S2 under pressure: Revealing the spin-polarized nature of bulk electronic bands

Science.gov (United States)

Brotons-Gisbert, Mauro; Segura, Alfredo; Robles, Roberto; Canadell, Enric; Ordejón, Pablo; Sánchez-Royo, Juan F.

2018-05-01

Monolayers of transition-metal dichalcogenide semiconductors present spin-valley locked electronic bands, a property with applications in valleytronics and spintronics that is usually believed to be absent in their centrosymmetric (as the bilayer or bulk) counterparts. Here we show that bulk 2 H -Mo S2 hides a spin-polarized nature of states determining its direct band gap, with the spin sequence of valence and conduction bands expected for its single layer. This relevant finding is attained by investigating the behavior of the binding energy of A and B excitons under high pressure, by means of absorption measurements and density-functional-theory calculations. These results raise an unusual situation in which bright and dark exciton degeneracy is naturally broken in a centrosymmetric material. Additionally, the phonon-assisted scattering process of excitons has been studied by analyzing the pressure dependence of the linewidth of discrete excitons observed at the absorption coefficient edge of 2 H -Mo S2 . Also, the pressure dependence of the indirect optical transitions of bulk 2 H -Mo S2 has been analyzed by absorption measurements and density-functional-theory calculations. These results reflect a progressive closure of the indirect band gap as pressure increases, indicating that metallization of bulk Mo S2 may occur at pressures higher than 26 GPa.

Gigantic 2D laser-induced photovoltaic effect in magnetically doped topological insulators for surface zero-bias spin-polarized current generation

Science.gov (United States)

Shikin, A. M.; Voroshin, V. Yu; Rybkin, A. G.; Kokh, K. A.; Tereshchenko, O. E.; Ishida, Y.; Kimura, A.

2018-01-01

A new kind of 2D photovoltaic effect (PVE) with the generation of anomalously large surface photovoltage up to 210 meV in magnetically doped topological insulators (TIs) has been studied by the laser time-resolved pump-probe angle-resolved photoelectron spectroscopy. The PVE has maximal efficiency for TIs with high occupation of the upper Dirac cone (DC) states and the Dirac point located inside the fundamental energy gap. For TIs with low occupation of the upper DC states and the Dirac point located inside the valence band the generated surface photovoltage is significantly reduced. We have shown that the observed giant PVE is related to the laser-generated electron-hole asymmetry followed by accumulation of the photoexcited electrons at the surface. It is accompanied by the 2D relaxation process with the generation of zero-bias spin-polarized currents flowing along the topological surface states (TSSs) outside the laser beam spot. As a result, the spin-polarized current generates an effective in-plane magnetic field that is experimentally confirmed by the k II-shift of the DC relative to the bottom non-spin-polarized conduction band states. The realized 2D PVE can be considered as a source for the generation of zero-bias surface spin-polarized currents and the laser-induced local surface magnetization developed in such kind 2D TSS materials.

The Formation and Evolution of Shear Bands in Plane Strain Compressed Nickel-Base Superalloy

Directory of Open Access Journals (Sweden)

Bin Tang

2018-02-01

Full Text Available The formation and evolution of shear bands in Inconel 718 nickel-base superalloy under plane strain compression was investigated in the present work. It is found that the propagation of shear bands under plane strain compression is more intense in comparison with conventional uniaxial compression. The morphology of shear bands was identified to generally fall into two categories: in “S” shape at severe conditions (low temperatures and high strain rates and “X” shape at mild conditions (high temperatures and low strain rates. However, uniform deformation at the mesoscale without shear bands was also obtained by compressing at 1050 °C/0.001 s−1. By using the finite element method (FEM, the formation mechanism of the shear bands in the present study was explored for the special deformation mode of plane strain compression. Furthermore, the effect of processing parameters, i.e., strain rate and temperature, on the morphology and evolution of shear bands was discussed following a phenomenological approach. The plane strain compression attempt in the present work yields important information for processing parameters optimization and failure prediction under plane strain loading conditions of the Inconel 718 superalloy.

Spin-dependent electron-phonon coupling in the valence band of single-layer WS₂

DEFF Research Database (Denmark)

Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin

2017-01-01

The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as MoS2 or WS2. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin....... Here, the electron-phonon coupling in the valence band maximum of single-layer WS2 is studied by first-principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of λK=0.0021 and 0.......40 for the upper and lower spin-split valence band of the freestanding layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment but it remains significant, in good agreement with the experimental results....

Strain-induced structural changes and chemical reactions. 1: Thermomechanical and kinetic models

International Nuclear Information System (INIS)

Levitas, V.I.; Nesterenko, V.F.; Meyers, M.A.

1998-01-01

Strain-induced chemical reactions were observed recently (Nesterenko et al) in experiments in the shear band in both Ti-Si and Nb-Si mixtures. Reactions can start in the solid state or after melting of at least one component. One of the aims is to find theoretically whether there are possible macroscopic mechanisms of mechanical intensification of the above and other chemical reactions due to plastic shear in the solid state. Continuum thermodynamical theory of structural changes with an athermal kinetics, which includes martensitic phase transformations, plastic strain-induced chemical reactions and polymorphic transformations, is developed at finite strains. The theory includes kinematics, criterion of structural change and extremum principle for determination of all unknown variable parameters for the case with neglected elastic strains. Thermodynamically consistent kinetic theory of thermally activated structural changes is suggested. The concept of the effective temperature is introduced which takes into account that temperature can vary significantly (on 1,000 K) during the chemical reactions under consideration. The theory will be applied in Part 2 of the paper for the description of chemical reactions in the shear band

Analysis of optical properties of strained semiconductor quantum dots for electromagnetically induced transparency

DEFF Research Database (Denmark)

Barettin, D.; Houmark-Nielsen, Jakob; Lassen, B.

2010-01-01

different k*p band structure models. In addition to the separation of the heavy and light holes due to the biaxial strain component, we observe a general reduction in the transition strengths due to energy crossings in the valence bands caused by strain and band mixing effects. We furthermore find a non......Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and identify an optimal height and size for efficient EIT...... operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing comparing four...

Defects/strain influenced magnetic properties and inverse of surface spin canting effect in single domain CoFe_2O_4 nanoparticles

International Nuclear Information System (INIS)

Singh, Simrjit; Khare, Neeraj

2016-01-01

Graphical abstract: - Highlights: • Synthesized single domain CoFe_2O_4 nanoparticles with different amount of strain. • Demonstrated a correlation between size, strain and magnetic properties of CoFe_2O_4. • Strain induces cationic redistribution at tetrahedral and octahedral sites of CoFe_2O_4. • Inverse of spin canting effect due to the redistribution of Fe"3"+ ions is demonstrated. - Abstract: Single domain CoFe_2O_4 nanoparticles with different amount of defects/strain have been synthesized by varying the growth temperature in the hydrothermal method. Nanoparticles grown at lower temperature are of larger size and exhibit more planar defects and oxygen vacancies as compared to nanoparticles grown at higher temperatures which are of smaller sizes and exhibit less planar defects and oxygen vacancies. The nanoparticles with larger amount of defects also possess a higher value of intrinsic strain as compared to nanoparticles with fewer defects. The presence of intrinsic strain in the nanoparticles is found to shift the cationic distribution at the tetrahedral and octahedral sites. The saturation magnetization (M_s) of the nanoparticles is found to depend upon both the intrinsic strain and size of the nanoparticles. The M_s increases with the decrease in the nanoparticles size from 32 nm to 20 nm, and this is correlated to the inverse of spin canting effect due to decrease in the intrinsic strain which leads to shifting of Co"2"+ ions from tetrahedral to octahedral sites. However, with further decrease in the size of the nanoparticles (16 nm), the size effect dominates over the strain effect leading to decrease in M_s. The coercivity is found to be higher in the nanoparticles with larger amount of defects/strain and has been attributed to strain induced strong spin canting and pinning due to defect sites. The variation of coercivity with particle size (D) exhibits deviation from D"3"/"2 dependence for the nanoparticles with larger amount of strain/defects.

Conductivity-Dependent Strain Response of Carbon Nanotube Treated Bacterial Nanocellulose

Directory of Open Access Journals (Sweden)

S. Farjana

2013-01-01

Full Text Available This paper reports the strain sensitivity of flexible, electrically conductive, and nanostructured cellulose which was prepared by modification of bacterial cellulose with double-walled carbon nanotubes (DWCNTs and multiwalled carbon nanotubes (MWCNTs. The electrical conductivity depends on the modifying agent and its dispersion process. The conductivity of the samples obtained from bacterial cellulose (BNC pellicles modified with DWCNT was in the range from 0.034 S·cm−1 to 0.39 S·cm−1, and for BNC pellicles modified with MWCNTs it was from 0.12 S·cm−1 to 1.6 S·cm−1. The strain-induced electromechanical response, resistance versus strain, was monitored during the application of tensile force in order to study the sensitivity of the modified nanocellulose. A maximum gauge factor of 252 was found from the highest conductive sample treated by MWCNT. It has been observed that the sensitivity of the sample depends on the conductivity of the modified cellulose.

Strain engineering of magnetic state in vacancy-doped phosphorene

Energy Technology Data Exchange (ETDEWEB)

Ren, Jie [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Zhang, Chunxiao, E-mail: zhangchunxiao@xtu.edu.cn [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Li, Jin [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Guo, Zhixin [Department of Physics, Xiangtan University, Xiangtan 411105, Hunan (China); Xiao, Huaping, E-mail: hpxiao@xtu.edu.cn [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China); Zhong, Jianxin [Hunan Provincial Key Laboratory of Micro–Nano Energy Materials and Devices, Xiangtan University, Xiangtan 411105, Hunan (China)

2016-09-23

Inducing and manipulating the magnetism in two-dimensional materials play an important role for the development of the next-generation spintronics. In this letter, the effects of the biaxial strain on magnetic properties of vacancy-doped phosphorene are investigated using first-principles calculation. We find although only SV956 doping induces magnetism for unstrained phosphorene, the biaxial strain induces nonzero magnetic moment for SV5566 and DVa doped phosphorene. The biaxial strain also modulates the magnetic state for SV956, SV5566 and DVa doped phosphorene. The local magnetic moment derives from the spin polarization of the dangling bonds near the vacancy. The biaxial strain influences the local bonding configuration near the vacancy which determines the presence of dangling bonds, and then modulates the magnetic state. Our findings promise the synergistic effect of strain engineering and vacancy decoration is an effective method for the operation of phosphorene-based spintronic devices. - Highlights: • Investigation of the magnetic moment of vacancy-doped phosphorene by DFT calculation. • The modulation of the magnetic moment by the biaxial strain. • The analysis of the bonding configuration with the biaxial strain. • The analysis of the electronic structures to explain the evolution of the magnetic moment. • The effects of the biaxial strain on the band gap and doping levels.

Cation-induced band-gap tuning in organohalide perovskites: interplay of spin-orbit coupling and octahedra tilting.

Science.gov (United States)

Amat, Anna; Mosconi, Edoardo; Ronca, Enrico; Quarti, Claudio; Umari, Paolo; Nazeeruddin, Md K; Grätzel, Michael; De Angelis, Filippo

2014-06-11

Organohalide lead perovskites have revolutionized the scenario of emerging photovoltaic technologies. The prototype MAPbI3 perovskite (MA = CH3NH3(+)) has dominated the field, despite only harvesting photons above 750 nm (∼1.6 eV). Intensive research efforts are being devoted to find new perovskites with red-shifted absorption onset, along with good charge transport properties. Recently, a new perovskite based on the formamidinium cation ((NH2)2CH(+) = FA) has shown potentially superior properties in terms of band gap and charge transport compared to MAPbI3. The results have been interpreted in terms of the cation size, with the larger FA cation expectedly delivering reduced band-gaps in Pb-based perovskites. To provide a full understanding of the interplay among size, structure, and organic/inorganic interactions in determining the properties of APbI3 perovskites, in view of designing new materials and fully exploiting them for solar cells applications, we report a fully first-principles investigation on APbI3 perovskites with A = Cs(+), MA, and FA. Our results evidence that the tetragonal-to-quasi cubic structural evolution observed when moving from MA to FA is due to the interplay of size effects and enhanced hydrogen bonding between the FA cations and the inorganic matrix altering the covalent/ionic character of Pb-I bonds. Most notably, the observed cation-induced structural variability promotes markedly different electronic and optical properties in the MAPbI3 and FAPbI3 perovskites, mediated by the different spin-orbit coupling, leading to improved charge transport and red-shifted absorption in FAPbI3 and in general in pseudocubic structures. Our theoretical model constitutes the basis for the rationale design of new and more efficient organohalide perovskites for solar cells applications.

Increasing Incidence and Unique Clinical Characteristics of Spinning-Induced Rhabdomyolysis.

Science.gov (United States)

Cutler, Todd S; DeFilippis, Ersilia M; Unterbrink, Michelle E; Evans, Arthur T

2016-09-01

To compare outcomes of spinning-induced rhabdomyolysis to those with exertional rhabdomyolysis from other physical activities. Retrospective cohort study. Academic medical center, single-center. A retrospective chart review was conducted on patients evaluated from December 2010 through November 2014. Patients were selected by ICD-9 code for rhabdomyolysis. Patients were included if the reason for admission was rhabdomyolysis caused by exertion. Cases of rhabdomyolysis caused by trauma or drugs were excluded. Muscle group involvement, admission, and peak creatine kinase levels, time from activity to hospitalization, length of hospital stay, and incidence of complications. Twenty-nine cases were reviewed with 14 admissions secondary to spinning. Median admission creatine kinase (73 000 IU/L vs 29 000 IU/L, P = 0.02) and peak creatine kinase levels were significantly higher in the spinning group (81 000 IU/L vs 31 000 IU/L, P = 0.007). Hospital admissions for spinning-induced rhabdomyolysis increased over time. Health care providers should be aware of the potential dangers of spinning-related rhabdomyolysis especially in otherwise healthy young people.

Spin transport in non-inertial frame

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Debashree, E-mail: debashreephys@gmail.com; Basu, B., E-mail: sribbasu@gmail.com

2014-09-01

The influence of acceleration and rotation on spintronic applications is theoretically investigated. In our formulation, considering a Dirac particle in a non-inertial frame, different spin related aspects are studied. The spin current appearing due to the inertial spin–orbit coupling (SOC) is enhanced by the interband mixing of the conduction and valence band states. Importantly, one can achieve a large spin current through the k{sup →}.p{sup →} method in this non-inertial frame. Furthermore, apart from the inertial SOC term due to acceleration, for a particular choice of the rotation frequency, a new kind of SOC term can be obtained from the spin rotation coupling (SRC). This new kind of SOC is of Dresselhaus type and controllable through the rotation frequency. In the field of spintronic applications, utilizing the inertial SOC and SRC induced SOC term, theoretical proposals for the inertial spin filter, inertial spin galvanic effect are demonstrated. Finally, one can tune the spin relaxation time in semiconductors by tuning the non-inertial parameters.

Spin-dependent recombination processes in wide band gap II-Mn-VI compounds

International Nuclear Information System (INIS)

Godlewski, M.; Yatsunenko, S.; Khachapuridze, A.; Ivanov, V.Yu.

2004-01-01

Mechanisms of optical detection of magnetic resonance in wide band gap II-Mn-VI diluted magnetic semiconductor (DMS) are discussed based on the results of photoluminescence (PL), PL kinetics, electron spin resonance (ESR) and optically detected magnetic resonance (ODMR) and optically detected cyclotron resonance (ODCR) investigations. Spin-dependent interactions between localized spins of Mn 2+ ions and spins/magnetic moments of free, localized or bound carriers are responsible for the observed ODMR signals. We conclude that these interactions are responsible for the observed rapid shortening of the PL decay time of 4 T 1 → 6 A 1 intra-shell emission of Mn 2+ ions and also for the observed delocalization of excitons in low dimensional structures

The Kubo-Greenwood spin-dependent electrical conductivity of 2D transition-metal dichalcogenides and group-IV materials: A Green's function study

Science.gov (United States)

Hoi, Bui Dinh; Yarmohammadi, Mohsen

2018-04-01

The spin-dependent electrical conductivity of counterparts of graphene, transition-metal dichalcogenides (TMDs) and group-IV nanosheets, have investigated by a magnetic exchange field (MEF)-induction to gain the electronic transport properties of charge carriers. We have implemented a k.p Hamiltonian model through the Kubo-Greenwood formalism in order to address the dynamical behavior of correlated Dirac fermions. Tuning the MEF enables one to control the effective mass of carriers in group-IV and TMDs, differently. We have found the Dirac-like points in a new quantum anomalous Hall (QAH) state at strong MEFs for both structures. For both cases, a broad peak in electrical conductivity originated from the scattering rate and entropy is observed. Spin degeneracy at some critical MEFs is another remarkable point. We have found that in the limit of zero or uniform MEFs with respect to the spin-orbit interaction, the large resulting electrical conductivity depends on the spin sub-bands in group-IV and MLDs. Featuring spin-dependent electronic transport properties, one can provide a new scenario for future possible applications.

Strain hardening by dynamic slip band refinement in a high-Mn lightweight steel

International Nuclear Information System (INIS)

Welsch, E.; Ponge, D.; Hafez Haghighat, S.M.; Sandlöbes, S.; Choi, P.; Herbig, M.; Zaefferer, S.; Raabe, D.

2016-01-01

The strain hardening mechanism of a high-Mn lightweight steel (Fe-30.4Mn-8Al-1.2C (wt%)) is investigated by electron channeling contrast imaging (ECCI) and transmission electron microscopy (TEM). The alloy is characterized by a constant high strain hardening rate accompanied by high strength and high ductility (ultimate tensile strength: 900 MPa, elongation to fracture: 68%). Deformation microstructures at different strain levels are studied in order to reveal and quantify the governing structural parameters at micro- and nanometer scales. As the material deforms mainly by planar dislocation slip causing the formation of slip bands, we quantitatively study the evolution of the slip band spacing during straining. The flow stress is calculated from the slip band spacing on the basis of the passing stress. The good agreement between the calculated values and the tensile test data shows dynamic slip band refinement as the main strain hardening mechanism, enabling the excellent mechanical properties. This novel strain hardening mechanism is based on the passing stress acting between co-planar slip bands in contrast to earlier attempts to explain the strain hardening in high-Mn lightweight steels that are based on grain subdivision by microbands. We discuss in detail the formation of the finely distributed slip bands and the gradual reduction of the spacing between them, leading to constantly high strain hardening. TEM investigations of the precipitation state in the as-quenched state show finely dispersed atomically ordered clusters (size < 2 nm). The influence of these zones on planar slip is discussed.

A Combined Theoretical and Experimental View on Valence and Conduction Band Densities of States of Lead Halide Perovskites

Science.gov (United States)

Kronik, Leeor; Endres, James; Egger, David A.; Kulbak, Michael; Kerner, Ross A.; Zhao, Lianfeng; Silver, Scott H.; Hodes, Gary; Rand, Barry P.; Cahen, David; Kahn, Antoine

We present results for the valence and conduction band density of states (DOS), measured via ultraviolet and inverse photoemission spectroscopies for three lead halide perovskites. Specifically, the DOS of MAPbI3, MAPbBr3, and CsPbBr3, grown on different substrates, are compared. Theoretical DOS, calculated via hybrid density functional theory and including spin-orbit coupling, are compared to experimental data. The agreement between experiment and theory, obtained after correcting the latter for quantitative discrepancies, leads to the identification of valence and conduction band spectral features. In particular, this comparison allows for precise determination of the energy position of the band edges, namely ionization energies and electron affinities of these materials. We find an unusually low DOS at the valence band maximum (VBM) of these systems, which confirms and generalizes previous findings of strong band dispersion and low DOS at the VBM of MAPbI3. This calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites.

Spin ice Thin Film: Surface Ordering, Emergent Square ice, and Strain Effects

Science.gov (United States)

Jaubert, L. D. C.; Lin, T.; Opel, T. S.; Holdsworth, P. C. W.; Gingras, M. J. P.

2017-05-01

Motivated by recent realizations of Dy2 Ti2 O7 and Ho2 Ti2 O7 spin ice thin films, and more generally by the physics of confined gauge fields, we study a model spin ice thin film with surfaces perpendicular to the [001] cubic axis. The resulting open boundaries make half of the bonds on the interfaces inequivalent. By tuning the strength of these inequivalent "orphan" bonds, dipolar interactions induce a surface ordering equivalent to a two-dimensional crystallization of magnetic surface charges. This surface ordering may also be expected on the surfaces of bulk crystals. For ultrathin films made of one cubic unit cell, once the surfaces have ordered, a square ice phase is stabilized over a finite temperature window. The square ice degeneracy is lifted at lower temperature and the system orders in analogy with the well-known F transition of the 6-vertex model. To conclude, we consider the addition of strain effects, a possible consequence of interface mismatches at the film-substrate interface. Our simulations qualitatively confirm that strain can lead to a smooth loss of Pauling entropy upon cooling, as observed in recent experiments on Dy2 Ti2 O7 films.

Effective one-band approach for the spin splittings in quantum wells

Science.gov (United States)

Alekseev, P. S.; Nestoklon, M. O.

2017-03-01

The spin-orbit interaction of two-dimensional electrons in quantum wells grown from the III-V semiconductors consists of two parts with different symmetry: the Bychkov-Rashba and the Dresselhaus terms. The last term is usually attributed to the bulk spin-orbit Hamiltonian which reflects the Td symmetry of the zincblende lattice. While it is known that the quantum well interfaces may also contribute to the Dresselhaus term, the exact structure and relative importance of the interface and bulk contributions are not well understood. To deal with this problem, we perform tight-binding calculations of the spin splittings of the electron levels in [100] GaAs/AlGaAs quantum wells. We show that the obtained spin splittings can be adequately described within the one-band electron Hamiltonian containing, together with the bulk contribution, the two interface contributions to the Dresselhaus term. The magnitude of the interface contribution to the spin-orbit interaction for sufficiently narrow quantum wells is of the same order as the bulk contribution.

Strain sensitivity of band gaps of Sn-containing semiconductors

DEFF Research Database (Denmark)

Li, Hong; Castelli, Ivano Eligio; Thygesen, Kristian Sommer

2015-01-01

Tuning of band gaps of semiconductors is a way to optimize materials for applications within photovoltaics or as photocatalysts. One way to achieve this is through applying strain to the materials. We investigate the effect of strain on a range of Sn-containing semiconductors using density...

Strain-induced gap transition and anisotropic Dirac-like cones in monolayer and bilayer phosphorene

Energy Technology Data Exchange (ETDEWEB)

Wang, Can; Xia, Qinglin, E-mail: qlxia@csu.edu.cn; Nie, Yaozhuang; Guo, Guanghua, E-mail: guogh@csu.edu.cn [School of Physics and Electronics, Central South University, Changsha 410083 (China)

2015-03-28

The electronic properties of two-dimensional monolayer and bilayer phosphorene subjected to uniaxial and biaxial strains have been investigated using first-principles calculations based on density functional theory. Strain engineering has obvious influence on the electronic properties of monolayer and bilayer phosphorene. By comparison, we find that biaxial strain is more effective in tuning the band gap than uniaxial strain. Interestingly, we observe the emergence of Dirac-like cones by the application of zigzag tensile strain in the monolayer and bilayer systems. For bilayer phosphorene, we induce the anisotropic Dirac-like dispersion by the application of appropriate armchair or biaxial compressive strain. Our results present very interesting possibilities for engineering the electronic properties of phosphorene and pave a way for tuning the band gap of future electronic and optoelectronic devices.

Spin-flip induced magnetoresistance in positionally disordered organic solids.

Science.gov (United States)

Harmon, N J; Flatté, M E

2012-05-04

A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Faster spin-flip transitions open up "spin-blocked" pathways to become viable conduction channels and hence produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with previous measurements, including the sensitive dependence of the magnetic-field dependence of the magnetoresistance on the ratio of the carrier hopping time to the hyperfine-induced carrier spin precession time. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory.

Magnetic field induced third order susceptibility of third order harmonic generation in a ZnMgSe strained quantum well

Energy Technology Data Exchange (ETDEWEB)

Mark, J. Abraham Hudson, E-mail: a.john.peter@gmail.com; Peter, A. John, E-mail: a.john.peter@gmail.com [Dept. of Physics, SSM Institute of Engineering and Technology, Dindigul-624002 (India)

2014-04-24

Third order susceptibility of third order harmonic generation is investigated in a Zn{sub 0.1}Mg{sub 0.9}Se/Zn{sub 0.8}Mg{sub 0.2}Se/Zn{sub 0.1}Mg{sub 0.9}Se quantum well in the presence of magnetic field strength. The confinement potential is considered as the addition of energy offsets of the conduction band (or valence band) and the strain-induced potential in our calculations. The material dependent effective mass is followed throughout the computation because it has a high influence on the electron energy levels in low dimensional semiconductor systems.

Dual Band Magnonic Crystals: Model System and Basic Spin Wave Dynamics

Directory of Open Access Journals (Sweden)

Federico Montoncello

2016-01-01

Full Text Available We investigate a special design of two-dimensional magnonic crystal, consisting of two superimposed lattices with different lattice constants, such that spin waves (SWs can propagate either in one or the other sublattice, depending on which of the two frequency bands they belong to. The SW bands are separated by a very large bandgap (in our model system, 6 GHz, easily tunable by changing the direction of an applied magnetic field, and the overlap of their spatial distribution, for any frequency of their bands, is always negligible. These properties make the designed system an ideal test system for a magnonic dual band waveguide, where the simultaneous excitation and subsequent propagation of two independent SW signals are allowed, with no mutual interference.

Step width alters iliotibial band strain during running.

Science.gov (United States)

Meardon, Stacey A; Campbell, Samuel; Derrick, Timothy R

2012-11-01

This study assessed the effect of step width during running on factors related to iliotibial band (ITB) syndrome. Three-dimensional (3D) kinematics and kinetics were recorded from 15 healthy recreational runners during overground running under various step width conditions (preferred and at least +/- 5% of their leg length). Strain and strain rate were estimated from a musculoskeletal model of the lower extremity. Greater ITB strain and strain rate were found in the narrower step width condition (p running, especially in persons whose running style is characterized by a narrow step width, may be beneficial in the treatment and prevention of running-related ITB syndrome.

Charge-induced spin torque in Weyl semimetals

Science.gov (United States)

Kurebayashi, Daichi; Nomura, Kentaro

In this work, we present phenomenological and microscopic derivations of spin torques in magnetically doped Weyl semimetals. As a result, we obtain the analytical expression of the spin torque generated, without a flowing current, when the chemical potential is modulated. We also find that this spin torque is a direct consequence of the chiral anomaly. Therefore, observing this spin torque in magnetic Weyl semimetals might be an experimental evidence of the chiral anomaly. This spin torque has also a great advantage in application. In contrast to conventional current-induced spin torques such as the spin-transfer torques, this spin torque does not accompany a constant current flow. Thus, devices using this operating principle is free from the Joule heating and possibly have higher efficiency than devices using conventional current-induced spin torques. This work was supported by JSPS KAKENHI Grant Number JP15H05854 and JP26400308.

Time-resolved lateral spin-caloric transport of optically generated spin packets in n-GaAs

Science.gov (United States)

Göbbels, Stefan; Güntherodt, Gernot; Beschoten, Bernd

2018-05-01

We report on lateral spin-caloric transport (LSCT) of electron spin packets which are optically generated by ps laser pulses in the non-magnetic semiconductor n-GaAs at K. LSCT is driven by a local temperature gradient induced by an additional cw heating laser. The spatio-temporal evolution of the spin packets is probed using time-resolved Faraday rotation. We demonstrate that the local temperature-gradient induced spin diffusion is solely driven by a non-equilibrium hot spin distribution, i.e. without involvement of phonon drag effects. Additional electric field-driven spin drift experiments are used to verify directly the validity of the non-classical Einstein relation for moderately doped semiconductors at low temperatures for near band-gap excitation.

Dynamic strain-mediated coupling of a single diamond spin to a mechanical resonator

OpenAIRE

Ovartchaiyapong, Preeti; Lee, Kenneth W.; Myers, Bryan A.; Jayich, Ania C. Bleszynski

2014-01-01

The development of hybrid quantum systems is central to the advancement of emerging quantum technologies, including quantum information science and quantum-assisted sensing. The recent demonstration of high quality single-crystal diamond resonators has led to significant interest in a hybrid system consisting of nitrogen-vacancy center spins that interact with the resonant phonon modes of a macroscopic mechanical resonator through crystal strain. However, the nitrogen-vacancy spin-strain inte...

Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film.

Science.gov (United States)

Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

2016-06-07

Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.

Proximity-induced spin-valley polarization in silicene or germanene on F-doped WS2

KAUST Repository

Sattar, Shahid

2016-11-11

Silicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. In the present work, we propose a substrate (F-doped WS2) that avoids detrimental effects and at the same time induces the required valley polarization, so that no further steps are needed for this purpose. The behavior is explained by proximity effects on silicene or germanene, as demonstrated by first-principles calculations. Broken inversion symmetry due to the presence of WS2 opens a substantial band gap in silicene or germanene. F doping of WS2 results in spin polarization, which, in conjunction with proximity-enhanced spin-orbit coupling, creates sizable spin-valley polarization.

New high spin states and band termination in {sup 83}Y and {sup 84}Zr

Energy Technology Data Exchange (ETDEWEB)

Johnson, T.D.; Aprahamian, A. [University of Notre Dame, Notre Dame, Indiana 46556 (United States); Lister, C.J.; Blumenthal, D.J.; Crowell, B. [Argonne National Laboratory, Argonne, Illinois 60439 (United States); Chowdhury, P. [University of Massachusetts, Lowell, Massachusetts 01854 (United States); Fallon, P.; Machiavelli, A.O. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

1997-03-01

The gamma decay of high spin yrast states in {sup 83}Y up to I{sup {pi}}=59/2{sup +} and 53/2{sup {minus}} have been observed using the reaction {sup 58}Ni({sup 29}Si,3p) at 110 MeV and the Gammasphere Early Implementation Array. The level scheme has been substantially extended due to the observations of several new transitions in all of the bands. A sequence of transitions feeding into the positive parity yrast band above I{sup {pi}}=47/2{sup +} seems to be consistent with a noncollective oblate structure expected at these high spins. A similar cascade is found in the data for {sup 84}Zr. A new forking of the favored negative parity band is found which may be due to neutron alignment polarizing the core to a different shape. This suggests that the {open_quotes}isomeric{close_quote}{close_quote} band in {sup 83}Y, for which one more connecting transition was found, is of a similar nature to other high-K bands found in this region. Lifetime measurements in the unfavored negative parity band are consistent with cranking calculations which predict a nearly oblate shape with a deformation parameter {beta}{sub 2}{approx}0.2. A qualitative analysis of line shapes at very high spins suggests the persistence of collectivity in the yrast sequence to the highest excitations seen. {copyright} {ital 1997} {ital The American Physical Society}

Electric field-induced magnetoresistance in spin-valve/piezoelectric multiferroic laminates for low-power spintronics

International Nuclear Information System (INIS)

Huong Giang, D.T.; Thuc, V.N.; Duc, N.H.

2012-01-01

Electric field-induced magnetic anisotropy has been realized in the spin-valve-based {Ni 80 Fe 20 /Cu/Fe 50 Co 50 /IrMn}/piezoelectric multiferroic laminates. In this system, electric-field control of magnetization is accomplished by strain mediated magnetoelectric coupling. Practically, the magnetization in the magnetostrictive FeCo layer of the spin-valve structure rotates under an effective compressive stress caused by the inverse piezoelectric effect in external electrical fields. This phenomenon is evidenced by the magnetization and magnetoresistance changes under the electrical field applied across the piezoelectric layer. The result shows great potential for advanced low-power spintronic devices. - Highlights: ► Investigate electric field-induced magnetic anisotropy in spin-valve/piezoelectric. ► Magnetization, magnetoresistance changes under electric field across piezoelectric. ► Magnetization in magnetostrictive FeCo-layer rotates under a compressive stress. ► This advance shows great implications for low-power electronics and spintronics.

Low-spin identical bands in rare earth nuclei

International Nuclear Information System (INIS)

Baktash, C.; Winchell, D.F.; Garrett, J.D.; Smith, A.

1992-01-01

A comprehensive study of odd-A rotational bands in normally deformed rare earth nuclei indicates that a large number of seniority-one configurations (21% for odd-Z nuclei) at low spin have moments of inertia nearly identical to that of the seniority-zero configuration of the neighboring even-even nucleus with one less nucleon. It is difficult to reconcile these results with conventional models of nuclear pair correlation, which predict variations of about 15% in the moments of inertia of configurations differing by one unit in seniority

Spin alignment and collective moment of inertia of the basic rotational band in the cranking model

International Nuclear Information System (INIS)

Tanaka, Yoshihide

1982-01-01

By making an attempt to separate the intrinsic particle and collective rotational motions in the cranking model, the spin alignment and the collective moment of inertia characterizing the basic rotational bands are defined, and are investigated by using a simple i sub(13/2) shell model. The result of the calculation indicates that the collective moment of inertia decreases under the presence of the quasiparticles which are responsible for the increase of the spin alignment of the band. (author)

Non-Dirac Chern insulators with large band gaps and spin-polarized edge states.

Science.gov (United States)

Xue, Y; Zhang, J Y; Zhao, B; Wei, X Y; Yang, Z Q

2018-05-10

Based on first-principles calculations and k·p models, we demonstrate that PbC/MnSe heterostructures are a non-Dirac type of Chern insulator with very large band gaps (244 meV) and exotically half-metallic edge states, providing the possibilities of realizing very robust, completely spin polarized, and dissipationless spintronic devices from the heterostructures. The achieved extraordinarily large nontrivial band gap can be ascribed to the contribution of the non-Dirac type electrons (composed of px and py) and the very strong atomic spin-orbit coupling (SOC) interaction of the heavy Pb element in the system. Surprisingly, the band structures are found to be sensitive to the different exchange and correlation functionals adopted in the first-principles calculations. Chern insulators with various mechanisms are acquired from them. These discoveries show that the predicted nontrivial topology in PbC/MnSe heterostructures is robust and can be observed in experiments at high temperatures. The system has great potential to have attractive applications in future spintronics.

Inter-spin distance determination using L-band (1-2 GHz) non-adiabatic rapid sweep electron paramagnetic resonance (NARS EPR)

Science.gov (United States)

Kittell, Aaron W.; Hustedt, Eric J.; Hyde, James S.

2014-01-01

Site-directed spin-labeling electron paramagnetic resonance (SDSL EPR) provides insight into the local structure and motion of a spin probe strategically attached to a molecule. When a second spin is introduced to the system, macromolecular information can be obtained through measurement of inter-spin distances either by continuous wave (CW) or pulsed electron double resonance (ELDOR) techniques. If both methodologies are considered, inter-spin distances of 8 to 80 Å can be experimentally determined. However, there exists a region at the upper limit of the conventional X-band (9.5 GHz) CW technique and the lower limit of the four-pulse double electron-electron resonance (DEER) experiment where neither method is particularly reliable. The work presented here utilizes L-band (1.9 GHz) in combination with non-adiabatic rapid sweep (NARS) EPR to address this opportunity by increasing the upper limit of the CW technique. Because L-band linewidths are three to seven times narrower than those at X-band, dipolar broadenings that are small relative to the X-band inhomogeneous linewidth become observable, but the signal loss due to the frequency dependence of the Boltzmann factor, has made L-band especially challenging. NARS has been shown to increase sensitivity by a factor of five, and overcomes much of this loss, making L-band distance determination more feasible [1]. Two different systems are presented and distances of 18–30 Å have been experimentally determined at physiologically relevant temperatures. Measurements are in excellent agreement with a helical model and values determined by DEER. PMID:22750251

Spin-orbit induced electronic spin separation in semiconductor nanostructures.

Science.gov (United States)

Kohda, Makoto; Nakamura, Shuji; Nishihara, Yoshitaka; Kobayashi, Kensuke; Ono, Teruo; Ohe, Jun-ichiro; Tokura, Yasuhiro; Mineno, Taiki; Nitta, Junsaku

2012-01-01

The demonstration of quantized spin splitting by Stern and Gerlach is one of the most important experiments in modern physics. Their discovery was the precursor of recent developments in spin-based technologies. Although electrical spin separation of charged particles is fundamental in spintronics, in non-uniform magnetic fields it has been difficult to separate the spin states of charged particles due to the Lorentz force, as well as to the insufficient and uncontrollable field gradients. Here we demonstrate electronic spin separation in a semiconductor nanostructure. To avoid the Lorentz force, which is inevitably induced when an external magnetic field is applied, we utilized the effective non-uniform magnetic field which originates from the Rashba spin-orbit interaction in an InGaAs-based heterostructure. Using a Stern-Gerlach-inspired mechanism, together with a quantum point contact, we obtained field gradients of 10(8) T m(-1) resulting in a highly polarized spin current.

Dynamic strain aging of twinning-induced plasticity (TWIP) steel in tensile testing and deep drawing

International Nuclear Information System (INIS)

Kim, J.G.; Hong, S.; Anjabin, N.; Park, B.H.; Kim, S.K.; Chin, K.-G.; Lee, S.; Kim, H.S.

2015-01-01

The dynamic strain aging (DSA) of metallic materials due to solute atom diffusion to mobile dislocations induce deformation instability with load fluctuations and deformation localizations, hence reducing their sheet formability. In this paper, DSA behaviors of twinning induced plasticity (TWIP) steel with and without Al during tensile testing and deep drawing are investigated in terms of strain localization and the Portevin-Le Chatelier (PLC) band. A theoretical DSA model with internal variables of dislocation density and twin volume fraction is presented for an estimation of strain localization and strain hardening behavior of TWIP steels. The simulation results of the load history and PLC bands during tensile testing and deep drawing are in good agreement with the experimental values. A serration behavior is observed in high-Mn TWIP steels and its tensile residual stress is higher than that in the Al-added TWIP steels, which results in a deformation crack or delayed fracture of deep drawn specimens

Spin- and valley-dependent electrical conductivity of ferromagnetic group-IV 2D sheets in the topological insulator phase

Science.gov (United States)

Hoi, Bui Dinh; Yarmohammadi, Mohsen; Mirabbaszadeh, Kavoos; Habibiyan, Hamidreza

2018-03-01

In this work, based on the Kubo-Greenwood formalism and the k . p Hamiltonian model, the impact of Rashba spin-orbit coupling on electronic band structure and electrical conductivity of spin-up and spin-down subbands in counterparts of graphene, including silicene, stanene, and germanene nanosheets has been studied. When Rashba coupling is considered, the effective mass of Dirac fermions decreases significantly and no significant change is caused by this coupling for the subband gaps. All these nanosheets are found to be in topological insulator quantum phase at low staggered on-site potentials due to the applied perpendicular external electric field. We point out that the electrical conductivity of germanene increases gradually with Rashab coupling, while silicene and stanene have some fluctuations due to their smaller Fermi velocity. Furthermore, some critical temperatures with the same electrical conductivity values for jumping to the higher energy levels are observed at various Rashba coupling strengths. For all structures, a broad peak appears at low temperatures in electrical conductivity curves corresponding to the large entropy of systems when the thermal energy reaches to the difference between the energy states. Finally, we have reported that silicene has the larger has the larger electrical conductivity than two others.

Spin-parity assignments and extension of the 02+ band in 158Er

International Nuclear Information System (INIS)

Dinoko, T. S.; Orce, J. N.; Sharpey-Schafer, J. F.; Wiedeking, M.; Bark, R. A.; Bvumbi, S. P.; Jones, P.; Khaleel, E. A. M. A.; Lawrie, E. A.; Lawrie, J. J.; Majola, S. N. T.; Masiteng, P. L.; Mohammed, H.; Ntshangase, S. S.; Papka, P.; Shirinda, O.; Stankiewicz, M.; Zhou, E. N.

2013-01-01

Low and medium spin collective structures in 158 Er have been studied using the 150 Sm( 12 C,4nγγ) fusion-evaporation reaction at a beam energy of E lab = 65 MeV. A band built on the 0 2 + excitation has been established and extended to J π = 18 + from the analysis of γ-γ coincidence relationships, intensity arguments and DCO ratios. The 0 2 + band in 158 Er presents a similar trend to the 0 2 + bands in the lighter N = 90 isotones but lies about 125 keV higher. This systematic trend supports a similar configuration for the 0 2 + bands in the N = 90 isotones. (authors)

Adsorbate-induced modification of electronic band structure of epitaxial Bi(111) films

Energy Technology Data Exchange (ETDEWEB)

Matetskiy, A.V., E-mail: mateckij@iacp.dvo.ru [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Bondarenko, L.V.; Tupchaya, A.Y.; Gruznev, D.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Eremeev, S.V. [Institute of Strength Physics and Materials Science, 634021 Tomsk (Russian Federation); Tomsk State University, 634050 Tomsk (Russian Federation); Zotov, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation); Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok (Russian Federation); Saranin, A.A. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

2017-06-01

Highlights: • Modification of electronic properties of ultrathin Bi films by adsorbates is demonstrated. • Due to electron doping from Cs adatoms, surface-state bands shift to higher binding energies. • As a result, only electron pockets are left in the Fermi map. • Tin acts as an acceptor dopant for Bi, shifting Fermi level upward. • As a result, only hole pockets are left in the Fermi map. - Abstract: Changes of the electronic band structure of Bi(111) films on Si(111) induced by Cs and Sn adsorption have been studied using angle-resolved photoemission spectroscopy and density functional theory calculations. It has been found that small amounts of Cs when it presents at the surface in a form of the adatom gas leads to shifting of the surface and quantum well states to the higher binding energies due to the electron donation from adsorbate to the Bi film. In contrast, adsorbed Sn dissolves into the Bi film bulk upon heating and acts as an acceptor dopant, that results in shifting of the surface and quantum well states upward to the lower binding energies. These results pave the way to manipulate with the Bi thin film electron band structure allowing to achieve a certain type of conductivity (electron or hole) with a single spin channel at the Fermi level making the adsorbate-modified Bi a reliable base for prospective spintronics applications.

Complex band structures of transition metal dichalcogenide monolayers with spin-orbit coupling effects

Science.gov (United States)

Szczęśniak, Dominik; Ennaoui, Ahmed; Ahzi, Saïd

2016-09-01

Recently, the transition metal dichalcogenides have attracted renewed attention due to the potential use of their low-dimensional forms in both nano- and opto-electronics. In such applications, the electronic and transport properties of monolayer transition metal dichalcogenides play a pivotal role. The present paper provides a new insight into these essential properties by studying the complex band structures of popular transition metal dichalcogenide monolayers (MX 2, where M  =  Mo, W; X  =  S, Se, Te) while including spin-orbit coupling effects. The conducted symmetry-based tight-binding calculations show that the analytical continuation from the real band structures to the complex momentum space leads to nonlinear generalized eigenvalue problems. Herein an efficient method for solving such a class of nonlinear problems is presented and yields a complete set of physically relevant eigenvalues. Solutions obtained by this method are characterized and classified into propagating and evanescent states, where the latter states manifest not only monotonic but also oscillatory decay character. It is observed that some of the oscillatory evanescent states create characteristic complex loops at the direct band gap of MX 2 monolayers, where electrons can directly tunnel between the band gap edges. To describe these tunneling currents, decay behavior of electronic states in the forbidden energy region is elucidated and their importance within the ballistic transport regime is briefly discussed.

Enhanced Proton Conductivity in Y-Doped BaZrO3 via Strain Engineering.

Science.gov (United States)

Fluri, Aline; Marcolongo, Aris; Roddatis, Vladimir; Wokaun, Alexander; Pergolesi, Daniele; Marzari, Nicola; Lippert, Thomas

2017-12-01

The effects of stress-induced lattice distortions (strain) on the conductivity of Y-doped BaZrO 3 , a high-temperature proton conductor with key technological applications for sustainable electrochemical energy conversion, are studied. Highly ordered epitaxial thin films are grown in different strain states while monitoring the stress generation and evolution in situ. Enhanced proton conductivity due to lower activation energies is discovered under controlled conditions of tensile strain. In particular, a twofold increased conductivity is measured at 200 °C along a 0.7% tensile strained lattice. This is at variance with conclusions coming from force-field simulations or the static calculations of diffusion barriers. Here, extensive first-principles molecular dynamic simulations of proton diffusivity in the proton-trapping regime are therefore performed and found to agree with the experiments. The simulations highlight that compressive strain confines protons in planes parallel to the substrate, while tensile strain boosts diffusivity in the perpendicular direction, with the net result that the overall conductivity is enhanced. It is indeed the presence of the dopant and the proton-trapping effect that makes tensile strain favorable for proton conduction.

Angle-resolved spin wave band diagrams of square antidot lattices studied by Brillouin light scattering

Energy Technology Data Exchange (ETDEWEB)

Gubbiotti, G.; Tacchi, S. [Istituto Officina dei Materiali del Consiglio Nazionale delle Ricerche (IOM-CNR), Sede di Perugia, c/o Dipartimento di Fisica e Geologia, Via A. Pascoli, I-06123 Perugia (Italy); Montoncello, F.; Giovannini, L. [Dipartimento di Fisica e Scienze della Terra, Università di Ferrara, Via G. Saragat 1, I-44122 Ferrara (Italy); Madami, M.; Carlotti, G. [Dipartimento di Fisica e Geologia, Università di Perugia, Via A. Pascoli, I-06123 Perugia (Italy); Ding, J.; Adeyeye, A. O. [Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2015-06-29

The Brillouin light scattering technique has been exploited to study the angle-resolved spin wave band diagrams of squared Permalloy antidot lattice. Frequency dispersion of spin waves has been measured for a set of fixed wave vector magnitudes, while varying the wave vector in-plane orientation with respect to the applied magnetic field. The magnonic band gap between the two most dispersive modes exhibits a minimum value at an angular position, which exclusively depends on the product between the selected wave vector magnitude and the lattice constant of the array. The experimental data are in very good agreement with predictions obtained by dynamical matrix method calculations. The presented results are relevant for magnonic devices where the antidot lattice, acting as a diffraction grating, is exploited to achieve multidirectional spin wave emission.

Emergent spin electromagnetism induced by magnetization textures in the presence of spin-orbit interaction (invited)

Energy Technology Data Exchange (ETDEWEB)

Tatara, Gen, E-mail: gen.tatara@riken.jp [RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198 Japan (Japan); Nakabayashi, Noriyuki [RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198 Japan (Japan); Graduate School of Science and Engineering, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397 Japan (Japan)

2014-05-07

Emergent electromagnetic field which couples to electron's spin in ferromagnetic metals is theoretically studied. Rashba spin-orbit interaction induces spin electromagnetic field which is in the linear order in gradient of magnetization texture. The Rashba-induced effective electric and magnetic fields satisfy in the absence of spin relaxation the Maxwell's equations as in the charge-based electromagnetism. When spin relaxation is taken into account besides spin dynamics, a monopole current emerges generating spin motive force via the Faraday's induction law. The monopole is expected to play an important role in spin-charge conversion and in the integration of spintronics into electronics.

Role of spin mixing conductance in spin pumping: Enhancement of spin pumping efficiency in Ta/Cu/Py structures

Energy Technology Data Exchange (ETDEWEB)

Deorani, Praveen; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore (Singapore)

2013-12-02

From spin pumping measurements in Ta/Py devices for different thicknesses of Ta, we determine the spin Hall angle to be 0.021–0.033 and spin diffusion length to be 8 nm in Ta. We have also studied the effect of changing the properties of non-magnet/ferromagnet interface by adding a Cu interlayer. The experimental results show that the effective spin mixing conductance increases in the presence of Cu interlayer for Ta/Cu/Py devices whereas it decreases in Pt/Cu/Py devices. Our findings allow the tunability of the spin pumping efficiency by adding a thin interlayer at the non-magnet/ferromagnet interface.

Spin and spinless conductivity in polypyrrole. Evidence for mixed-valence conduction

Energy Technology Data Exchange (ETDEWEB)

Zotti, G.; Schiavon, G. (Ist. di Polarografia ed Elettrochimica Preparativa, Padova (Italy))

In situ conductivity of polypyrrole (as tosylate) as a function of oxidative doping level attains a maximum at three-quarters the total oxidation charge and the relevant in situ ESR signal corresponds to an equal concentration of spin-carrying (polaron) and spinless (bipolaron) species. Results are explained on the basis of mixed-valence conduction. Bipolaron conduction, taking the place of polaron-bipolaron conductivity at higher oxidation levels, accounts for persisting conductivity in the high-oxidation state.

Hydrostatic-pressure and uniaxial-strain experiments for controlling the spin-Peierls transition

International Nuclear Information System (INIS)

Mito, Masaki; Deguchi, Hiroyuki; Fujita, Wataru; Kondo, Ryusuke; Kagoshima, Seiichi

2010-01-01

The spin-Peierls (SP) system is considered to be a quantum spin system strongly coupled with the lattice. We have succeeded in controlling SP transition by applying hydrostatic pressure and/or uniaxial strain. The observed phenomenon could be a typical example for understanding the SP transition based on the Hamiltonian. (author)

Strain effect on graphene nanoribbon carrier statistic in the presence of non-parabolic band structure

International Nuclear Information System (INIS)

Izuani Che Rosid, N A; Ahmadi, M T; Ismail, Razali

2016-01-01

The effect of tensile uniaxial strain on the non-parabolic electronic band structure of armchair graphene nanoribbon (AGNR) is investigated. In addition, the density of states and the carrier statistic based on the tight-binding Hamiltonian are modeled analytically. It is found that the property of AGNR in the non-parabolic band region is varied by the strain. The tunable energy band gap in AGNR upon strain at the minimum energy is described for each of n-AGNR families in the non-parabolic approximation. The behavior of AGNR in the presence of strain is attributed to the breakable AGNR electronic band structure, which varies the physical properties from its normality. The linear relation between the energy gap and the electrical properties is featured to further explain the characteristic of the deformed AGNR upon strain. (paper)

Giant valley drifts in uniaxially strained monolayer MoS2

KAUST Repository

Zhang, Qingyun

2013-12-30

Using first-principles calculations, we study the electronic structure of monolayer MoS2 under uniaxial strain. We show that the energy valleys drift far off the corners of the Brillouin zone (K points), about 12 times the amount observed in graphene. Therefore, it is essential to take this effect into consideration for a correct identification of the band gap. The system remains a direct band gap semiconductor up to 4% uniaxial strain, while the size of the band gap decreases from 1.73 to 1.54 eV. We also demonstrate that the splitting of the valence bands due to inversion symmetry breaking and spin-orbit coupling is not sensitive to strain.

Multiphoton electronic-spin generation and transmission spectroscopy in n-type GaAs

Energy Technology Data Exchange (ETDEWEB)

Idrish Miah, M., E-mail: m.miah@griffith.edu.a [Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

2011-01-17

Multiphoton electronic-spin generation in semiconductors was investigated using differential transmission spectroscopy. The generation of the electronic spins in the semiconductor samples were achieved by multiphoton pumping with circularly polarized light beam and was probed by the spin-resolved transmission of the samples. The electronic spin-polarization of conduction band was estimated and was found to depend on the delay of the probe beam, temperature as well as on the multiphoton pumping energy. The temperature dependence showed a decrease of the spin-polarization with increasing temperature. The electronic spin-polarization was found to depolarize rapidly for multiphoton pumping energy larger than the energy gap of the split-off band to the conduction band. The results were compared with those obtained in one-photon pumping, which shows that an enhancement of the electronic spin-polarization was achieved in multiphoton pumping. The findings resulting from this investigation might have potential applications in opto-spintronics, where the generation of highly polarized electronic spins is required.

Multiphoton electronic-spin generation and transmission spectroscopy in n-type GaAs

International Nuclear Information System (INIS)

Idrish Miah, M.

2011-01-01

Multiphoton electronic-spin generation in semiconductors was investigated using differential transmission spectroscopy. The generation of the electronic spins in the semiconductor samples were achieved by multiphoton pumping with circularly polarized light beam and was probed by the spin-resolved transmission of the samples. The electronic spin-polarization of conduction band was estimated and was found to depend on the delay of the probe beam, temperature as well as on the multiphoton pumping energy. The temperature dependence showed a decrease of the spin-polarization with increasing temperature. The electronic spin-polarization was found to depolarize rapidly for multiphoton pumping energy larger than the energy gap of the split-off band to the conduction band. The results were compared with those obtained in one-photon pumping, which shows that an enhancement of the electronic spin-polarization was achieved in multiphoton pumping. The findings resulting from this investigation might have potential applications in opto-spintronics, where the generation of highly polarized electronic spins is required.

Spin-orbit-induced spin splittings in polar transition metal dichalcogenide monolayers

KAUST Repository

Cheng, Yingchun; Zhu, Zhiyong; Tahir, Muhammad; Schwingenschlö gl, Udo

2013-01-01

. We present ab initio electronic structure, phonon, and molecular-dynamics calculations to study the structural stability and spin-orbit-induced spin splitting in the transition metal dichalcogenide monolayers MXY (M = Mo, W and X, Y = S, Se, Te

Spin conversion induced by spin-orbit interaction in positronium collisions

International Nuclear Information System (INIS)

Saito, H; Nakayama, T; Hyodo, T

2009-01-01

The positronium spin conversion reaction induced by spin-orbit interaction is investigated. We obtain the reaction rates during positronium-Xe and positronium-Kr collisions by using the Zeeman mixing of positronium states. At thermal energies corresponding to room temperature, the reaction rate for spin conversion due to spin-orbit interaction is found to be almost twice that for the positronium pick-off reaction. We also study the energy dependence of the reaction rate. The mean energy of positronium is controlled by changing the gas temperature and using positronium in thermal equilibrium. We found that the reaction rate increases with the collision energy.

Topological honeycomb magnon Hall effect: A calculation of thermal Hall conductivity of magnetic spin excitations

Energy Technology Data Exchange (ETDEWEB)

Owerre, S. A., E-mail: solomon@aims.ac.za [African Institute for Mathematical Sciences, 6 Melrose Road, Muizenberg, Cape Town 7945, South Africa and Perimeter Institute for Theoretical Physics, 31 Caroline St. N., Waterloo, Ontario N2L 2Y5 (Canada)

2016-07-28

Quite recently, the magnon Hall effect of spin excitations has been observed experimentally on the kagome and pyrochlore lattices. The thermal Hall conductivity κ{sup xy} changes sign as a function of magnetic field or temperature on the kagome lattice, and κ{sup xy} changes sign upon reversing the sign of the magnetic field on the pyrochlore lattice. Motivated by these recent exciting experimental observations, we theoretically propose a simple realization of the magnon Hall effect in a two-band model on the honeycomb lattice. The magnon Hall effect of spin excitations arises in the usual way via the breaking of inversion symmetry of the lattice, however, by a next-nearest-neighbour Dzyaloshinsky-Moriya interaction. We find that κ{sup xy} has a fixed sign for all parameter regimes considered. These results are in contrast to the Lieb, kagome, and pyrochlore lattices. We further show that the low-temperature dependence on the magnon Hall conductivity follows a T{sup 2} law, as opposed to the kagome and pyrochlore lattices. These results suggest an experimental procedure to measure thermal Hall conductivity within a class of 2D honeycomb quantum magnets and ultracold atoms trapped in a honeycomb optical lattice.

Properties of rotational bands at the spin limit in A {approximately} 50, A {approximately} 65 and A {approximately} 110 nuclei

Energy Technology Data Exchange (ETDEWEB)

Janzen, V.P.; Andrews, H.R.; Ball, G.C. [Chalk River Labs., Ontario (Canada)] [and others

1996-12-31

There is now widespread evidence for the smooth termination of rotational bands in A {approx_equal} 110 nuclei at spins of 40-to-50{Dirac_h}s. The characteristics of these bands are compared to those of bands recently observed to high spin in {sup 64}Zn and {sup 48}Cr, studied with the 8{pi} {gamma}-ray spectrometer coupled to the Chalk River miniball charged-particle-detector array.

Spin Dynamics in (111) GaAs/AlGaAs Undoped Asymmetric Quantum Wells

International Nuclear Information System (INIS)

Wang Gang; Ye Hui-Qi; Shi Zhen-Wu; Wang Wen-Xin; Liu Bao-Li; Xavier Marie; Andrea Balocchi; Thierry Amand

2012-01-01

The electron spin dynamics is investigated by the time-resolved Kerr rotation technique in a pair of special GaAs/AlGaAs asymmetric quantum well samples grown on (111)-oriented substrates, whose structures are the same except for their opposite directions of potential asymmetry. A large difference of spin lifetimes between the two samples is observed at low temperature. This difference is interpreted in terms of a cancellation effect between the Dresselhaus spin-splitting term in the conduction band and another term induced by interface inversion asymmetry. The deviation decreases with the increasing temperature, and almost disappears when T > 100 K because the cubic Dresselhaus term becomes more important

Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.

Science.gov (United States)

Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua

2017-10-11

By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.

Spin-Hall conductivity and electric polarization in metallic thin films

KAUST Repository

Wang, Xuhui

2013-02-21

We predict theoretically that when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall conductivity due to the surface scattering and a transverse electric polarization due to the spin-dependent phase shift in the spinor wave functions.

Spin-Hall conductivity and electric polarization in metallic thin films

KAUST Repository

Wang, Xuhui; Xiao, Jiang; Manchon, Aurelien; Maekawa, Sadamichi

2013-01-01

We predict theoretically that when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall conductivity due to the surface scattering and a transverse electric polarization due to the spin-dependent phase shift in the spinor wave functions.

Current-induced torques and interfacial spin-orbit coupling

KAUST Repository

Haney, Paul M.; Lee, Hyun-Woo; Lee, Kyung-Jin; Manchon, Aurelien; Stiles, M. D.

2013-01-01

In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular interest. Here we use first-principles methods to calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism. We focus exclusively on the analog to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the “fieldlike” torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.

Current-induced torques and interfacial spin-orbit coupling

KAUST Repository

Haney, Paul M.

2013-12-19

In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular interest. Here we use first-principles methods to calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism. We focus exclusively on the analog to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the “fieldlike” torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.

Low-spin identical bands in odd-A nuclei

International Nuclear Information System (INIS)

Baktash, C.; Garrett, J.D.; Winchell, D.F.; Smith, A.

1992-01-01

A comprehensive study of odd-A rotational bands in normally-deformed rare-earth nuclei indicates that a large number of seniority-one configurations (30% for odd-Z nuclei) at low spin have moments of inertia nearly identical to that of the seniority-zero configuration of the neighboring even-even nucleus with one less nucleon. It is difficult to reconcile these results with conventional models, based on the traditional picture of nuclear pair correlation in vogue for more than three decades, which predict variations of about 15% in the moments of inertia of configurations differing by one unit in seniority

Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

Science.gov (United States)

Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

2011-03-01

We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

Spin-dependent transport and current-induced spin transfer torque in a disordered zigzag silicene nanoribbon

International Nuclear Information System (INIS)

Zhou, Benliang; Zhou, Benhu; Liu, Guang; Guo, Dan; Zhou, Guanghui

2016-01-01

We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.

Spin-dependent transport and current-induced spin transfer torque in a disordered zigzag silicene nanoribbon

Energy Technology Data Exchange (ETDEWEB)

Zhou, Benliang [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Benhu [Department of Physics, Shaoyang University, Shaoyang 422001 (China); Liu, Guang; Guo, Dan [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Guanghui, E-mail: ghzhou@hunnu.edu.cn [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China)

2016-11-01

We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.

Spin relaxation and the Kondo effect in transition metal dichalcogenide monolayers

International Nuclear Information System (INIS)

Rostami, Habib; Moghaddam, Ali G; Asgari, Reza

2016-01-01

We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenide monolayers. We show that momentum and spin relaxation times, due to the exchange interaction by magnetic impurities, are much longer when the Fermi level is inside the spin-split region of the valence band. In contrast to the spin relaxation, we find that the dependence of Kondo temperature T K on the doping is not strongly affected by the spin–orbit induced splitting, although only one of the spin species are present at each valley. This result, which is obtained using both perturbation theory and the poor man’s scaling methods, originates from the intervalley spin-flip scattering in the spin-split region. We further demonstrate the decline in the conductivity with temperatures close to T K , which can vary with the doping. Our findings reveal the qualitative difference with the Kondo physics in conventional metallic systems and other Dirac materials. (paper)

Strain induced ferromagnetism and large magnetoresistance of epitaxial La1.5Sr0.5CoMnO6 thin films

Science.gov (United States)

Krishna Murthy, J.; Jyotsna, G.; N, Nileena; Anil Kumar, P. S.

2017-08-01

In this study, the structural, magnetic, and magneto-transport properties of La1.5Sr0.5CoMnO6 (LSCMO) thin films deposited on a SrTiO3 (001) substrate were investigated. A normal θ/2θ x-ray diffraction, rocking curve, ϕ-scan, and reciprocal space mapping data showed that prepared LSCMO thin films are single phase and highly strained with epitaxial nature. Temperature vs. magnetization of LSCMO films exhibits strain-induced ferromagnetic ordering with TC ˜ 165 K. In contrast to the bulk samples, there was no exchange bias and canted type antiferromagnetic and spin glass behavior in films having thickness (t) ≤ 26 nm. Temperature dependent resistivity data were explained using Schnakenberg's model and the polaron hopping conduction process. The slope change in resistivity and magnetoresistance maximum (˜65%) around TC indicates the existence of a weak double exchange mechanism between the mixed valence states of transition metal ions. Suppression of spin dependent scattering with the magnetic field is attributed for the large negative magnetoresistance in LSCMO films.

Giant valley drifts in uniaxially strained monolayer MoS{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Schwingenschloegl, Udo; Zhang, Qingyun; Cheng, Yingchun; Gan, Li-Yong [PSE Division, KAUST, Thuwal 23955 (Saudi Arabia)

2016-07-01

Using first-principles calculations, we study the electronic structure of monolayer MoS{sub 2} under uniaxial strain. We show that the energy valleys drift far off the corners of the Brillouin zone (K points), about 12 times the amount observed in graphene. Therefore, it is essential to take this effect into consideration for a correct identification of the band gap. The system remains a direct band gap semiconductor up to 4% uniaxial strain, while the size of the band gap decreases from 1.73 to 1.54 eV. We also demonstrate that the splitting of the valence bands due to inversion symmetry breaking and spin-orbit coupling is not sensitive to strain.

Nucleation and evolution of strain-induced martensitic (b.c.c.) embryos and substructure in stainless steel: a transmission electron microscope study

International Nuclear Information System (INIS)

Staudhammer, K.P.; Hecker, S.S.; Murr, L.E.

1983-01-01

The deformation of type 304 stainless steel produces a preponderance of strain-induced /chi/ (b.c.c.) martensite, which nucleates as stable embryos at micro-shear band or twin-fault intersections as proposed by Olson and Cohen. The two intersecting micro-shear bands must have a specific defect (fault-displacement) structure, and for stable martensite embryos to form requires a minimal micro-shear band thickness ranging from 50-70 A. The critical nature of nucleation is influenced by the local temperature and strain. The structure, geometry, and morphology of strain-induced martensite embryos is essentially invariant regardless of the strain rate, strain state or temperature. Larger volume fractions of martensite evolve at large strains (greater than or equal to 20%) as a result of embryo coalescence to produce a blocky-type morphology. Martensite embryos and coalesced volume elements of /chi/ are frequently characterized by an irregular non-homogeneous distribution of smaller b.c.c. regimes which result from the irregular satisfaction of the necessary and specific fault-displacement requirements within a larger intersection volume

Electrical control of a confined electron spin in a silicene quantum dot

Science.gov (United States)

Szafran, Bartłomiej; Mreńca-Kolasińska, Alina; Rzeszotarski, Bartłomiej; Żebrowski, Dariusz

2018-04-01

We study spin control for an electron confined in a flake of silicene. We find that the lowest-energy conduction-band levels are split by the diagonal intrinsic spin-orbit coupling into Kramers doublets with a definite projection of the spin on the orbital magnetic moment. We study the spin control by AC electric fields using the nondiagonal Rashba component of the spin-orbit interactions with the time-dependent atomistic tight-binding approach. The Rashba interactions in AC electric fields produce Rabi spin-flip times of the order of a nanosecond. These times can be reduced to tens of picoseconds provided that the vertical electric field is tuned to an avoided crossing opened by the Rashba spin-orbit interaction. We demonstrate that the speedup of the spin transitions is possible due to the intervalley coupling induced by the armchair edge of the flake. The study is confronted with the results for circular quantum dots decoupled from the edge with well defined angular momentum and valley index.

Strain effects on anisotropic magnetoresistance in a nanowire spin valve

Science.gov (United States)

Hossain, Md I.; Maksud, M.; Subramanian, A.; Atulasimha, J.; Bandyopadhyay, S.

2016-11-01

The longitudinal magnetoresistance of a copper nanowire contacted by two cobalt contacts shows broad spin-valve peaks at room temperature. However, when the contacts are slightly heated, the peaks change into troughs which are signature of anisotropic magnetoresistance (AMR). Under heating, the differential thermal expansion of the contacts and the substrate generates a small strain in the cobalt contacts which enhances the AMR effect sufficiently to change the peak into a trough. This shows the extreme sensitivity of AMR to strain. The change in the AMR resistivity coefficient due to strain is estimated to be a few m Ω -m/microstrain.

Magnonic band structure, complete bandgap, and collective spin wave excitation in nanoscale two-dimensional magnonic crystals

International Nuclear Information System (INIS)

Kumar, D.; Barman, A.; Kłos, J. W.; Krawczyk, M.

2014-01-01

We present the observation of a complete bandgap and collective spin wave excitation in two-dimensional magnonic crystals comprised of arrays of nanoscale antidots and nanodots, respectively. Considering that the frequencies dealt with here fall in the microwave band, these findings can be used for the development of suitable magnonic metamaterials and spin wave based signal processing. We also present the application of a numerical procedure, to compute the dispersion relations of spin waves for any high symmetry direction in the first Brillouin zone. The results obtained from this procedure have been reproduced and verified by the well established plane wave method for an antidot lattice, when magnetization dynamics at antidot boundaries are pinned. The micromagnetic simulation based method can also be used to obtain iso–frequency contours of spin waves. Iso–frequency contours are analogous of the Fermi surfaces and hence, they have the potential to radicalize our understanding of spin wave dynamics. The physical origin of bands, partial and full magnonic bandgaps have been explained by plotting the spatial distribution of spin wave energy spectral density. Although, unfettered by rigid assumptions and approximations, which afflict most analytical methods used in the study of spin wave dynamics, micromagnetic simulations tend to be computationally demanding. Thus, the observation of collective spin wave excitation in the case of nanodot arrays, which can obviate the need to perform simulations, may also prove to be valuable

Two-photon spin-polarization spectroscopy in silicon-doped GaAs.

Science.gov (United States)

Miah, M Idrish

2009-05-14

We generate spin-polarized electrons in bulk GaAs using circularly polarized two-photon pumping with excess photon energy (DeltaE) and detect them by probing the spin-dependent transmission of the sample. The spin polarization of conduction band electrons is measured and is found to be strongly dependent on DeltaE. The initial polarization, pumped with DeltaE=100 meV, at liquid helium temperature is estimated to be approximately 49.5%, which is very close to the theoretical value (50%) permitted by the optical selection rules governing transitions from heavy-hole and light-hole states to conduction band states in a bulk sample. However, the polarization pumped with larger DeltaE decreases rapidly because of the exciting carriers from the split-off band.

Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

International Nuclear Information System (INIS)

Huang, H. B.; Hu, J. M.; Yang, T. N.; Chen, L. Q.; Ma, X. Q.

2014-01-01

Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

International Nuclear Information System (INIS)

Wang, L.M.; Guo, C.-C.

2005-01-01

The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

Thermal conductivity of magnetic insulators with strong spin-orbit coupling

Science.gov (United States)

Stamokostas, Georgios; Lapas, Panteleimon; Fiete, Gregory A.

We study the influence of spin-orbit coupling on the thermal conductivity of various types of magnetic insulators. In the absence of spin-orbit coupling and orbital-degeneracy, the strong-coupling limit of Hubbard interactions at half filling can often be adequately described in terms of a pure spin Hamiltonian of the Heisenberg form. However, in the presence of spin-orbit coupling the resulting exchange interaction can become highly anisotropic. The effect of the atomic spin-orbit coupling, taken into account through the effect of magnon-phonon interactions and the magnetic order and excitations, on the lattice thermal conductivity of various insulating magnetic systems is studied. We focus on the regime of low temperatures where the dominant source of scattering is two-magnon scattering to one-phonon processes. The thermal current is calculated within the Boltzmann transport theory. We are grateful for financial support from NSF Grant DMR-0955778.

Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical

Science.gov (United States)

Sunahori, Fumie X.; Nagarajan, Ramya; Clouthier, Dennis J.

2015-12-01

The cold boron carbide free radical (BC X 4Σ-) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B 4Σ--X 4Σ- and E 4Π-X 4Σ- band systems of both 11BC and 10BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E-X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B 4Σ- excited state. It has been shown that λ″ expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E 4Π-X 4Σ- 0-0 and 1-0 bands of 11BC. The E-X 0-0 band of 10BC was found to be severely perturbed. The ground state main electron configuration is …3σ24σ25σ11π22π0 and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals.

Spin Hall conductance in a Y-shaped junction device in presence of tunable spin-orbit coupling

Science.gov (United States)

Ganguly, Sudin; Basu, Saurabh

2017-06-01

We study spin Hall effect in a three terminal Y-shaped device in presence of tunable spin-orbit (SO) interactions via Landauer-Büttiker formalism. We have evolved a fabrication technique for creating different angular separation between the two arms of the Y-shaped device so as to investigate the effect of angular width on the spin Hall conductance (SHC). A smaller angular separation yields a larger conductance. Also arbitrary orientation of the spin quantization axes yields interesting three dimensional contour maps for the SHC corresponding to different angular separation of the Y-shaped device. In addition to the GSH demonstrating bounded behaviour for different angular separations, there are distinct symmetry axes about which SHC demonstrates reflection symmetry. The results explicitly show breaking of the spin rotational symmetry. Further a systematic study is carried out to compare and contrast between the different SO terms, such as Rashba and Dresselhaus SO interactions and the interplay of the angular separation therein.

Strain-induced Weyl and Dirac states and direct-indirect gap transitions in group-V materials

Science.gov (United States)

Moynihan, Glenn; Sanvito, Stefano; O'Regan, David D.

2017-12-01

We perform comprehensive density-functional theory calculations on strained two-dimensional phosphorus (P), arsenic (As) and antimony (Sb) in the monolayer, bilayer, and bulk α-phase, from which we compute the key mechanical and electronic properties of these materials. Specifically, we compute their electronic band structures, band gaps, and charge-carrier effective masses, and identify the qualitative electronic and structural transitions that may occur. Moreover, we compute the elastic properties such as the Young’s modulus Y; shear modulus G; bulk modulus B ; and Poisson ratio ν and present their isotropic averages of as well as their dependence on the in-plane orientation, for which the relevant expressions are derived. We predict strain-induced Dirac states in the monolayers of As and Sb and the bilayers of P, As, and Sb, as well as the possible existence of Weyl states in the bulk phases of P and As. These phases are predicted to support charge velocities up to 106 m {{\\text{s}}-1} and, in some highly anisotropic cases, permit one-dimensional ballistic conductivity in the puckered direction. We also predict numerous band gap transitions for moderate in-plane stresses. Our results contribute to the mounting evidence for the utility of these materials, made possible by their broad range in tuneable properties, and facilitate the directed exploration of their potential application in next-generation electronics.

Spin transport in oxygen adsorbed graphene nanoribbon

Science.gov (United States)

Kumar, Vipin

2018-04-01

The spin transport properties of pristine graphene nanoribbons (GNRs) have been most widely studied using theoretical and experimental tools. The possibilities of oxidation of fabricated graphene based nano electronic devices may change the device characteristics, which motivates to further explore the properties of graphene oxide nanoribbons (GONRs). Therefore, we present a systematic computational study on the spin polarized transport in surface oxidized GNR in antiferromagnetic (AFM) spin configuration using density functional theory combined with non-equilibrium Green's function (NEGF) method. It is found that the conductance in oxidized GNRs is significantly suppressed in the valance band and the conduction band. A further reduction in the conductance profile is seen in presence of two oxygen atoms on the ribbon plane. This change in the conductance may be attributed to change in the surface topology of the ribbon basal plane due to presence of the oxygen adatoms, where the charge transfer take place between the ribbon basal plane and the oxygen atoms.

Development of transformation bands in TiNi SMA for various stress and strain rates studied by a fast and sensitive infrared camera

International Nuclear Information System (INIS)

Pieczyska, E A; Kulasinski, K; Tobushi, H

2013-01-01

TiNi shape memory alloy (SMA) was subjected to tension at various strain rates for stress- and strain-controlled tests. The nucleation, development and saturation of the stress-induced martensitic transformation were investigated, based on the specimen temperature changes, measured by a fast and sensitive infrared camera. It was found that the initial, macroscopically homogeneous phase transformation occurs at the same stress level for all strain rates applied, regardless of the loading manner, while the stress of the localized transformation increases with the strain rate. At higher strain rate, a more dynamic course of the transformation process was observed, revealed in the creation of numerous fine transformation bands. An inflection point was noticed on the stress–strain curve, dividing the transformation range into two stages: the first heterogeneous, where transformation bands nucleate and evolve throughout the sample; the second, where the bands overlap, related to significant temperature increase and an upswing region of the curve. In the final part of the SMA loading a decrease of the average sample temperature revealed the saturation stage of the transformation. It was also observed that nucleation of the localized martensitic forward transformation takes place in the weakest area of the sample in both approaches, whereas the reverse transformation always initiates in its central part. (paper)

Low-spin identical bands in odd-A nuclei

Energy Technology Data Exchange (ETDEWEB)

Baktash, C; Garrett, J D; Winchell, D F; Smith, A [Oak Ridge National Lab., TN (United States)

1992-08-01

A comprehensive study of odd-A rotational bands in normally-deformed rare-earth nuclei indicates that a large number of seniority-one configurations (30% for odd-Z nuclei) at low spin have moments of inertia nearly identical to that of the seniority-zero configuration of the neighboring even-even nucleus with one less nucleon. It is difficult to reconcile these results with conventional models, based on the traditional picture of nuclear pair correlation in vogue for more than three decades, which predict variations of about 15% in the moments of inertia of configurations differing by one unit in seniority. (author). 18 refs., 1 tab., 1 fig.

Low-spin identical bands in odd-A nuclei

International Nuclear Information System (INIS)

Baktash, C.; Garrett, J.D.; Winchell, D.F.; Smith, A.

1992-01-01

A comprehensive study of odd-A rotational bands in normally-deformed rare-earth nuclei indicates that a large number of seniority-one configurations (30% for odd-Z nuclei) at low spin have moments of inertia nearly identical to that of the seniority-zero configuration of the neighboring even-even nucleus with one less nucleon. It is difficult to reconcile these results with conventional models, based on the traditional picture of nuclear pair correlation in vogue for more than three decades, which predict variations of about 15% in the moments of inertia of configurations differing by one unit in seniority. (author). 18 refs., 1 tab., 1 fig

Optical properties and optimization of electromagnetically induced transparency in strained InAs/GaAs quantum dot structures

DEFF Research Database (Denmark)

Barettin, D.; Houmark-Nielsen, Jakob; Lassen, B.

2009-01-01

comparing four different k center dot p band-structure models. In addition to the separation of the heavy and light holes due to the biaxial-strain component, we observe a general reduction in the transition strengths due to energy crossings in the valence bands caused by strain and band-mixing effects. We......Using multiband k center dot p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable and identify an optimal height and size for efficient...... EIT operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy-level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing...

Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers.

Science.gov (United States)

Kim, Dong-Jun; Jeon, Chul-Yeon; Choi, Jong-Guk; Lee, Jae Wook; Surabhi, Srivathsava; Jeong, Jong-Ryul; Lee, Kyung-Jin; Park, Byong-Guk

2017-11-09

Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, pure spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet/non-magnetic heavy metal bilayers. We observe that the magnitude of transverse magnetoresistance in the bilayers is significantly modified by heavy metal and its thickness. This strong dependence of transverse magnetoresistance on heavy metal evidences the generation of thermally induced pure spin current in heavy metal. Our analysis shows that spin Nernst angles of W and Pt have the opposite sign to their spin Hall angles. Moreover, our estimate implies that the magnitude of spin Nernst angle would be comparable to that of spin Hall angle, suggesting an efficient generation of spin current by the spin Nernst effect.

Full-zone analysis of relativistic spin splitting at band anticrossings: The case of zinc-blende semiconductors

DEFF Research Database (Denmark)

Chantis, Athanasios N.; Christensen, Niels Egede; Svane, Axel

2010-01-01

. In the first, the spin splitting is completely suppressed for one of the bands and doubled for the other. In the second, the absolute value of the splitting is markedly enhanced for both bands approaching the magnitude of the hybridization gap. We demonstrate these effects in zinc-blende semiconductors...

2D Electron Gas with 100% Spin-Polarization in the (LaMnO3)2/(SrTiO3)2 Superlattice under Uniaxial Strain

KAUST Repository

Cossu, Fabrizio

2014-07-28

By first-principles calculations we investigate the structural, electronic, and magnetic properties of the (LaMnO3)2/(SrTiO3)2 superlattice. We find that a monoclinic C2h symmetry is energetically favorable and that the spins order ferromagnetically. Under both compressive and tensile uniaxial strain the electronic structure of the superlattice shows a half-metallic character. In particular, a fully spin-polarized two-dimensional electron gas, which traces back to the Ti 3dxy orbitals, is achieved under compressive uniaxial strain. The (LaMnO3)2/(SrTiO3)2 superlattice is analysed with respect to its structure, magnetism, and electronic properties. Our results demonstrate that uniaxial strain in an experimentally accessible range, both tensile and compressive, can be used to induce half-metallicity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quasiparticle band gap of organic-inorganic hybrid perovskites: Crystal structure, spin-orbit coupling, and self-energy effects

Science.gov (United States)

Gao, Weiwei; Gao, Xiang; Abtew, Tesfaye A.; Sun, Yi-Yang; Zhang, Shengbai; Zhang, Peihong

2016-02-01

The quasiparticle band gap is one of the most important materials properties for photovoltaic applications. Often the band gap of a photovoltaic material is determined (and can be controlled) by various factors, complicating predictive materials optimization. An in-depth understanding of how these factors affect the size of the gap will provide valuable guidance for new materials discovery. Here we report a comprehensive investigation on the band gap formation mechanism in organic-inorganic hybrid perovskites by decoupling various contributing factors which ultimately determine their electronic structure and quasiparticle band gap. Major factors, namely, quasiparticle self-energy, spin-orbit coupling, and structural distortions due to the presence of organic molecules, and their influences on the quasiparticle band structure of organic-inorganic hybrid perovskites are illustrated. We find that although methylammonium cations do not contribute directly to the electronic states near band edges, they play an important role in defining the band gap by introducing structural distortions and controlling the overall lattice constants. The spin-orbit coupling effects drastically reduce the electron and hole effective masses in these systems, which is beneficial for high carrier mobilities and small exciton binding energies.

Spin polarization of tunneling current in barriers with spin-orbit coupling

International Nuclear Information System (INIS)

Fujita, T; Jalil, M B A; Tan, S G

2008-01-01

We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons

Spin polarization of tunneling current in barriers with spin-orbit coupling.

Science.gov (United States)

Fujita, T; Jalil, M B A; Tan, S G

2008-03-19

We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons.

Band Gap Changes Of Single Walled Carbon Nanotubes Under Uniaxial Strain

International Nuclear Information System (INIS)

Dereli, G.

2010-01-01

The study of the band gap variation with mechanical deformation is important in manipulations of Single Walled Carbon Nanotubes (SWCNT). In this study we investigated the electronic band structure and the mechanical properties of (12,0) and (13,0) SWCNTs under the effect of uniaxial strain. Electronic and mechanical properties are studied using a parallel, order N, tight-binding molecular dynamics (O(N) TBMD) simulation code designed by G. Dereli et. al. We showed the effect of uniaxial strain on the variations of band gaps and the total energy per atom of (12,0) and (13,0) SWCNTs. We calculated Young's modulus and the Poisson ratio of these SWCNTs. The research reported here was supported through the Yildiz Technical University Research Found Project No: 24-01-01-04. Simulations are performed in parallel environment at Carbon Nanotube Simulation Laboratory of Yildiz Technical University.

Effect of uniaxial strain on the tunnel magnetoresistance of T-shaped graphene nanoribbon based spin-valve

Science.gov (United States)

Fouladi, A. Ahmadi

2016-07-01

We theoretically investigated the spin-dependent transport through a T-shaped graphene nanoribbon (TsGNR) based spin-valve consisting of armchair graphene sandwiched between two semi-infinite ferromagnetic armchair graphene nanoribbon leads in the presence of an applied uniaxial strain. Based on a tight-binding model and standard nonequilibrium Green's function technique, it is demonstrated that the tunnel magnetoresistance (TMR) for the system can be increased about 98% by tuning the uniaxial strain. Our results show that the absolute values of TMR around the zero bias voltage for compressive strain are larger than tensile strain. In addition, the TMR of the system can be nicely controlled by GNR width.

Light-hole conduction in InGaAs/GaAs strained-layer superlattices

International Nuclear Information System (INIS)

Schirber, J.E.; Fritz, I.J.; Dawson, L.R.

1985-01-01

We report the first observation of light-hole band carriers in In/sub 0.2/Ga/sub 0.8/As/GaAs strained-layer superlattices by direct measurements of their effective mass (m*m/sub o/ = 0.14) using oscillatory magnetoresistance data. Preferential population of light-hole states, due to splitting of the degenerate bulk valence bands by built-in strain, allows this direct observation

Pseudo-spin flip in doubly decoupled structures and identical bands

International Nuclear Information System (INIS)

Kreiner, A.J.; Cardona, M.A.; Somacal, H.; Debray, M.E.; Hojman, D.; Davidson, J.; Davidson, M.; De Acuna, D.; Napoli, D.R.; Rico, J.; Bazzacco, D.; Burch, R.; Lenzi, S.M.; Rossi Alvarez, C.; Blasi, N.; Lo Bianco, G.

1995-01-01

Unfavored components of doubly decoupled bands are reported for the first time. They can be interpreted as having the pseudo-spin flipped relative to the orientation in the favored components, i.e. antialigned with respect to the rotation axis. In addition, the differences in consecutive transition energies along the favored and unfavored sequences are strikingly similar among them up to I π =15 + and 14 + respectively. This feature arises from a cancellation of differences in alignments and moments of inertia. ((orig.))

Giant Rashba spin splitting in Bi2Se3: Tl

KAUST Repository

Singh, Nirpendra; Saeed, Yasir; Schwingenschlö gl, Udo

2014-01-01

First-principles calculations are employed to demonstrate a giant Rashba spin splitting in Bi2Se3:Tl. Biaxial tensile and compressive strain is used to tune the splitting by modifying the potential gradient. The band gap is found to increase under

High-Strain Rate Failure Modeling Incorporating Shear Banding and Fracture

Science.gov (United States)

2017-11-22

High Strain Rate Failure Modeling Incorporating Shear Banding and Fracture The views, opinions and/or findings contained in this report are those of...SECURITY CLASSIFICATION OF: 1. REPORT DATE (DD-MM-YYYY) 4. TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6. AUTHORS...Report as of 05-Dec-2017 Agreement Number: W911NF-13-1-0238 Organization: Columbia University Title: High Strain Rate Failure Modeling Incorporating

Inducing and manipulating magnetization in 2D zinc–oxide by strain and external voltage

Science.gov (United States)

Taivansaikhan, P.; Tsevelmaa, T.; Rhim, S. H.; Hong, S. C.; Odkhuu, D.

2018-04-01

Two-dimensional (2D) structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and its switchable feature are of great interests in spintronics research. Herein, the density functional theory studies reveal the critical impacts of strain and external gating on vacancy-induced magnetism and its spin direction in a graphene-like single layer of zinc oxide (ZnO). In contrast to the pristine and defective ZnO with an O-vacancy, the presence of a Zn-vacancy induces significant magnetic moments to its first neighboring O and Zn atoms due to the charge deficit. We further predict that the direction of magnetization easy axis reverses from an in-plane to perpendicular orientation under a practically achievable biaxial compressive strain of only ~1–2% or applying an electric field by means of the charge density modulation. This magnetization reversal is mainly driven by the strain- and electric-field-induced changes in the spin–orbit coupled d states of the first-neighbor Zn atom to a Zn-vacancy. These findings open interesting prospects for exploiting strain and electric field engineering to manipulate magnetism and magnetization orientation of 2D materials.

Retrospective biodosimetry with small tooth enamel samples using K-Band and X-Band

International Nuclear Information System (INIS)

Gomez, Jorge A.; Kinoshita, Angela; Leonor, Sergio J.; Belmonte, Gustavo C.; Baffa, Oswaldo

2011-01-01

In an attempt to make the in vitro electron spin resonance (ESR) retrospective dosimetry of the tooth enamel a lesser invasive method, experiments using X-Band and K-Band were performed, aiming to determine conditions that could be used in cases of accidental exposures. First, a small prism from the enamel was removed and ground with an agate mortar and pestle until particles reach a diameter of approximately less than 0.5 mm. This enamel extraction process resulted in lower signal artifact compared with the direct enamel extraction performed with a diamond burr abrasion. The manual grinding of the enamel does not lead to any induced ESR signal artifact, whereas the use of a diamond burr at low speed produces a signal artifact equivalent to the dosimetric signal induced by a dose of 500 mGy of gamma irradiation. A mass of 25 mg of enamel was removed from a sound molar tooth previously irradiated in vitro with a dose of 100 mGy. This amount of enamel was enough to detect the dosimetric signal in a standard X-Band spectrometer. However using a K-Band spectrometer, samples mass between 5 and 10 mg were sufficient to obtain the same sensitivity. An overall evaluation of the uncertainties involved in the process in this and other dosimetric assessments performed at our laboratory indicates that it is possible at K-Band to estimate a 100 mGy dose with 25% accuracy. In addition, the use of K-Band also presented higher sensitivity and allowed the use of smaller sample mass in comparison with X-Band. Finally, the restoration process performed on a tooth after extraction of the 25 mg of enamel is described. This was conducted by dental treatment using photopolymerizable resin which enabled complete recovery of the tooth from the functional and aesthetic viewpoint showing that this procedure can be minimally invasive.

Retrospective biodosimetry with small tooth enamel samples using K-Band and X-Band

Energy Technology Data Exchange (ETDEWEB)

Gomez, Jorge A. [Departamento de Fisica, FFCLRP, Universidade de Sao Paulo, 14040-901 Ribeirao Preto, Sao Paulo (Brazil); Kinoshita, Angela [Departamento de Fisica, FFCLRP, Universidade de Sao Paulo, 14040-901 Ribeirao Preto, Sao Paulo (Brazil); Universidade Sagrado Coracao - USC, 17011-160 Bauru, Sao Paulo (Brazil); Leonor, Sergio J. [Departamento de Fisica, FFCLRP, Universidade de Sao Paulo, 14040-901 Ribeirao Preto, Sao Paulo (Brazil); Belmonte, Gustavo C. [Universidade Sagrado Coracao - USC, 17011-160 Bauru, Sao Paulo (Brazil); Baffa, Oswaldo, E-mail: baffa@usp.br [Departamento de Fisica, FFCLRP, Universidade de Sao Paulo, 14040-901 Ribeirao Preto, Sao Paulo (Brazil)

2011-09-15

In an attempt to make the in vitro electron spin resonance (ESR) retrospective dosimetry of the tooth enamel a lesser invasive method, experiments using X-Band and K-Band were performed, aiming to determine conditions that could be used in cases of accidental exposures. First, a small prism from the enamel was removed and ground with an agate mortar and pestle until particles reach a diameter of approximately less than 0.5 mm. This enamel extraction process resulted in lower signal artifact compared with the direct enamel extraction performed with a diamond burr abrasion. The manual grinding of the enamel does not lead to any induced ESR signal artifact, whereas the use of a diamond burr at low speed produces a signal artifact equivalent to the dosimetric signal induced by a dose of 500 mGy of gamma irradiation. A mass of 25 mg of enamel was removed from a sound molar tooth previously irradiated in vitro with a dose of 100 mGy. This amount of enamel was enough to detect the dosimetric signal in a standard X-Band spectrometer. However using a K-Band spectrometer, samples mass between 5 and 10 mg were sufficient to obtain the same sensitivity. An overall evaluation of the uncertainties involved in the process in this and other dosimetric assessments performed at our laboratory indicates that it is possible at K-Band to estimate a 100 mGy dose with 25% accuracy. In addition, the use of K-Band also presented higher sensitivity and allowed the use of smaller sample mass in comparison with X-Band. Finally, the restoration process performed on a tooth after extraction of the 25 mg of enamel is described. This was conducted by dental treatment using photopolymerizable resin which enabled complete recovery of the tooth from the functional and aesthetic viewpoint showing that this procedure can be minimally invasive.

Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

Directory of Open Access Journals (Sweden)

Walid Amamou

2016-03-01

Full Text Available We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields, and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ∼20% for MgO and ∼10% for Al2O3.

Spin texture of the surface state of three-dimensional Dirac material Ca3PbO

Science.gov (United States)

Kariyado, Toshikaze

2015-04-01

The bulk and surface electronic structures of a candidate three-dimensional Dirac material Ca3PbO and its family are discussed especially focusing on the spin texture on the surface states. We first explain the basic features of the bulk band structure of Ca3PbO, such as emergence of Dirac fermions near the Fermi energy, and compare it with the other known three-dimensional Dirac semimetals. Then, the surface bands and spin-texture on them are investigated in detail. It is shown that the surface bands exhibit strong momentum-spin locking, which may be useful in some application for spin manipulation, induced by a combination of the inversion symmetry breaking at the surface and the strong spin-orbit coupling of Pb atoms. The surface band structure and the spin-textures are sensitive to the surface types.

Spin texture of the surface state of three-dimensional Dirac material Ca3PbO

International Nuclear Information System (INIS)

Kariyado, Toshikaze

2015-01-01

The bulk and surface electronic structures of a candidate three-dimensional Dirac material Ca 3 PbO and its family are discussed especially focusing on the spin texture on the surface states. We first explain the basic features of the bulk band structure of Ca 3 PbO, such as emergence of Dirac fermions near the Fermi energy, and compare it with the other known three-dimensional Dirac semimetals. Then, the surface bands and spin-texture on them are investigated in detail. It is shown that the surface bands exhibit strong momentum-spin locking, which may be useful in some application for spin manipulation, induced by a combination of the inversion symmetry breaking at the surface and the strong spin-orbit coupling of Pb atoms. The surface band structure and the spin-textures are sensitive to the surface types. (paper)

Lattice constant changes leading to significant changes of the spin-gapless features and physical nature in a inverse Heusler compound Zr2MnGa

Science.gov (United States)

Wang, Xiaotian; Cheng, Zhenxiang; Khenata, Rabah; Wu, Yang; Wang, Liying; Liu, Guodong

2017-12-01

The spin-gapless semiconductors with parabolic energy dispersions [1-3] have been recently proposed as a new class of materials for potential applications in spintronic devices. In this work, according to the Slater-Pauling rule, we report the fully-compensated ferrimagnetic (FCF) behavior and spin-gapless semiconducting (SGS) properties for a new inverse Heusler compound Zr2MnGa by means of the plane-wave pseudo-potential method based on density functional theory. With the help of GGA-PBE, the electronic structures and the magnetism of Zr2MnGa compound at its equilibrium and strained lattice constants are systematically studied. The calculated results show that the Zr2MnGa is a new SGS at its equilibrium lattice constant: there is an energy gap between the conduction and valence bands for both the majority and minority electrons, while there is no gap between the majority electrons in the valence band and the minority electrons in the conduction band. Remarkably, not only a diverse physical nature transition, but also different types of spin-gapless features can be observed with the change of the lattice constants. Our calculated results of Zr2MnGa compound indicate that this material has great application potential in spintronic devices.

An integrated approach to model strain localization bands in magnesium alloys

Science.gov (United States)

Baxevanakis, K. P.; Mo, C.; Cabal, M.; Kontsos, A.

2018-02-01

Strain localization bands (SLBs) that appear at early stages of deformation of magnesium alloys have been recently associated with heterogeneous activation of deformation twinning. Experimental evidence has demonstrated that such "Lüders-type" band formations dominate the overall mechanical behavior of these alloys resulting in sigmoidal type stress-strain curves with a distinct plateau followed by pronounced anisotropic hardening. To evaluate the role of SLB formation on the local and global mechanical behavior of magnesium alloys, an integrated experimental/computational approach is presented. The computational part is developed based on custom subroutines implemented in a finite element method that combine a plasticity model with a stiffness degradation approach. Specific inputs from the characterization and testing measurements to the computational approach are discussed while the numerical results are validated against such available experimental information, confirming the existence of load drops and the intensification of strain accumulation at the time of SLB initiation.

Size and strain tunable band alignment of black-blue phosphorene lateral heterostructures.

Science.gov (United States)

Li, Yan; Ma, Fei

2017-05-17

Single-element lateral heterostructures composed of black and blue phosphorene are not only free from lattice mismatch but also exhibit rich physical properties related to the seamlessly stitched interfaces, providing the building blocks for designing atomically thin devices. Using first-principles calculations, we investigate the influence of interface structure, size effect and strain engineering on the electronic structure, effective masses and band alignment of black-blue phosphorene lateral heterostructures. The lateral heterostructure with an octatomic-ring interface presents a strong metallic feature due to the interface states, while a metal-semiconductor transition takes place in the system with a hexatomic-ring interface upon hydrogen passivation. Following a reciprocal scaling law, the band gap is tuned in a wide energy range by synchronously increasing the widths of black and blue phosphorene or by only widening that of black phosphorene. Moreover, type-II band alignment is observed in the width ranges of 2.0-3.1 nm and 3.7-4.2 nm, out of which it is type-I. However, the band gap and effective masses show small changes if only the width of blue phosphorene is altered. When the lateral heterostructure is tensile loaded, the effective mass ratio of hole to electron is enlarged by an order of magnitude at a strain of 4% along the zigzag direction. Meanwhile, the band alignment undergoes a crossover from type-I to type-II at a strain of 2%, facilitating efficient electron-hole separation for light detection and harvesting.

Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb2Se3

Science.gov (United States)

Das, Shekhar; Sirohi, Anshu; Kumar Gupta, Gaurav; Kamboj, Suman; Vasdev, Aastha; Gayen, Sirshendu; Guptasarma, Prasenjit; Das, Tanmoy; Sheet, Goutam

2018-06-01

Majority of the A2B3 -type chalcogenide systems with strong spin-orbit coupling (SOC), such as Bi2Se3,Bi2Te3 , and Sb2Te3 , etc., are topological insulators. One important exception is Sb2Se3 where a topological nontrivial phase was argued to be possible under ambient conditions, but such a phase could be detected to exist only under pressure. In this paper, we show that Sb2Se3 like Bi2Se3 displays a generation of highly spin-polarized current under mesoscopic superconducting point contacts as measured by point-contact Andreev reflection spectroscopy. In addition, we observe a large negative and anisotropic magnetoresistance of the mesoscopic metallic point contacts formed on Sb2Se3 . Our band-structure calculations confirm the trivial nature of Sb2Se3 crystals and reveal two trivial surface states one of which shows large spin splitting due to Rashba-type SOC. The observed high spin polarization and related phenomena in Sb2Se3 can be attributed to this spin splitting.

Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

Science.gov (United States)

Ideue, T.; Checkelsky, J. G.; Bahramy, M. S.; Murakawa, H.; Kaneko, Y.; Nagaosa, N.; Tokura, Y.

2014-10-01

BiTeI is a polar semiconductor with gigantic Rashba spin-split bands in bulk. We have investigated the effect of pressure on the electronic structure of this material via magnetotransport. Periods of Shubunikov-de Haas (SdH) oscillations originating from the spin-split outer Fermi surface and inner Fermi surface show disparate responses to pressure, while the carrier number derived from the Hall effect is unchanged with pressure. The associated parameters which characterize the spin-split band structure are strongly dependent on pressure, reflecting the pressure-induced band deformation. We find the SdH oscillations and transport response are consistent with the theoretically proposed pressure-induced band deformation leading to a topological phase transition. Our analysis suggests the critical pressure for the quantum phase transition near Pc=3.5 GPa.

Largely Tunable Band Structures of Few-Layer InSe by Uniaxial Strain.

Science.gov (United States)

Song, Chaoyu; Fan, Fengren; Xuan, Ningning; Huang, Shenyang; Zhang, Guowei; Wang, Chong; Sun, Zhengzong; Wu, Hua; Yan, Hugen

2018-01-31

Because of the strong quantum confinement effect, few-layer γ-InSe exhibits a layer-dependent band gap, spanning the visible and near infrared regions, and thus recently has been drawing tremendous attention. As a two-dimensional material, the mechanical flexibility provides an additional tuning knob for the electronic structures. Here, for the first time, we engineer the band structures of few-layer and bulk-like InSe by uniaxial tensile strain and observe a salient shift of photoluminescence peaks. The shift rate of the optical gap is approximately 90-100 meV per 1% strain for four- to eight-layer samples, which is much larger than that for the widely studied MoS 2 monolayer. Density functional theory calculations well reproduce the observed layer-dependent band gaps and the strain effect and reveal that the shift rate decreases with the increasing layer number for few-layer InSe. Our study demonstrates that InSe is a very versatile two-dimensional electronic and optoelectronic material, which is suitable for tunable light emitters, photodetectors, and other optoelectronic devices.

Conductance of two-dimensional waveguide in presence of the Rashba spin-orbit interaction

Science.gov (United States)

Liu, Duan-Yang; Xia, Jian-Bai

2018-04-01

By using the transfer matrix method, we investigated spin transport in some straight structures in presence of the Rashba spin-orbit interaction. It is proved that the interference of two spin states is the same as that in one-dimensional Datta-Das spin field-effect transistor. The conductance of these structures has been calculated. Conductance quantization is common in these waveguides when we change the Fermi energy and the width of the waveguide. Using a periodic system of quadrate stubs and changing the Fermi energy, a nearly square-wave conductance can be obtained in some regions of the Fermi energy.

Current-induced spin polarization in a spin-polarized two-dimensional electron gas with spin-orbit coupling

International Nuclear Information System (INIS)

Wang, C.M.; Pang, M.Q.; Liu, S.Y.; Lei, X.L.

2010-01-01

The current-induced spin polarization (CISP) is investigated in a combined Rashba-Dresselhaus spin-orbit-coupled two-dimensional electron gas, subjected to a homogeneous out-of-plane magnetization. It is found that, in addition to the usual collision-related in-plane parts of CISP, there are two impurity-density-free contributions, arising from intrinsic and disorder-mediated mechanisms. The intrinsic parts of spin polarization are related to the Berry curvature, analogous with the anomalous and spin Hall effects. For short-range collision, the disorder-mediated spin polarizations completely cancel the intrinsic ones and the total in-plane components of CISP equal those for systems without magnetization. However, for remote disorders, this cancellation does not occur and the total in-plane components of CISP strongly depend on the spin-orbit interaction coefficients and magnetization for both pure Rashba and combined Rashba-Dresselhaus models.

Current-induced damping of nanosized quantum moments in the presence of spin-orbit interaction

Science.gov (United States)

Mahfouzi, Farzad; Kioussis, Nicholas

2017-05-01

Motivated by the need to understand current-induced magnetization dynamics at the nanoscale, we have developed a formalism, within the framework of Keldysh Green function approach, to study the current-induced dynamics of a ferromagnetic (FM) nanoisland overlayer on a spin-orbit-coupling (SOC) Rashba plane. In contrast to the commonly employed classical micromagnetic LLG simulations the magnetic moments of the FM are treated quantum mechanically. We obtain the density matrix of the whole system consisting of conduction electrons entangled with the local magnetic moments and calculate the effective damping rate of the FM. We investigate two opposite limiting regimes of FM dynamics: (1) The precessional regime where the magnetic anisotropy energy (MAE) and precessional frequency are smaller than the exchange interactions and (2) the local spin-flip regime where the MAE and precessional frequency are comparable to the exchange interactions. In the former case, we show that due to the finite size of the FM domain, the "Gilbert damping" does not diverge in the ballistic electron transport regime, in sharp contrast to Kambersky's breathing Fermi surface theory for damping in metallic FMs. In the latter case, we show that above a critical bias the excited conduction electrons can switch the local spin moments resulting in demagnetization and reversal of the magnetization. Furthermore, our calculations show that the bias-induced antidamping efficiency in the local spin-flip regime is much higher than that in the rotational excitation regime.

Spin-flip scattering effect on the current-induced spin torque in ferromagnet-insulator-ferromagnet tunnel junctions

International Nuclear Information System (INIS)

Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong

2003-01-01

We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields

Strain induced ionic conductivity enhancement in epitaxial Ce0.9Gd0.1O22d

DEFF Research Database (Denmark)

Kant, K. Mohan; Esposito, Vincenzo; Pryds, Nini

2012-01-01

-plane ionic conductivity in CGO epitaxial thin films. The ionic conductivity is found to increase with decrease in buffer layer thickness. The tailored ionic conductivity enhancement is explained in terms of close relationships among epitaxy, strain, and ionic conductivity....

Rotational bands on few-particle excitations of very high spin

International Nuclear Information System (INIS)

Andersson, C.G.; Krumlinde, J.; Leander, G.; Szymanski, Z.

1980-01-01

An RPA formalism is developed to investigate the existence and properties of slow collective rotation around a non-symmetry axis, when there already exists a large angular momentum K along the symmetry axis built up by aligned single-particle spins. It is found necessary to distinguish between the collectivity and the repeatability of the rotational excitations. First the formalism is applied to bands on hihg-K isomers in the well-deformed nucleus 176 Hf, where the rotational-model picture is reproduced for intermediate K-values in agreement with experiment. At high K there is a suppression of the collectivity corresponding to the diminishing vector-coupling coefficient of the rotational model, but the repeatability actually improves. The moment of inertia is predicted to remain substantially smaller than the rigid-body value so the bands slope up steeply from the yrast line at spins where pairing effects are gone. A second application is to the initially spherical nucleus 212 Rn, which is believed to acquire an oblate deformation that increases steadily with K due to the oblate shape of the aligned orbitals. In this case the repeatable excitations come higher above the yrast line than in 176 Hf, even at comparable deformations. Some collective states may occur very close to yrast, but these are more like dressed singleparticle excitations. The main differences between the two nuclei studied is interpreted as a general consequence of their different shell structure. (author)

Spin-valley splitting of electron beam in graphene

Directory of Open Access Journals (Sweden)

Yu Song

2016-11-01

Full Text Available We study spatial separation of the four degenerate spin-valley components of an electron beam in a EuO-induced and top-gated ferromagnetic/pristine/strained graphene structure. We show that, in a full resonant tunneling regime for all beam components, the formation of standing waves can lead sudden phase jumps ∼−π and giant lateral Goos-Hänchen shifts as large as the transverse beam width, while the interplay of the spin and valley imaginary wave vectors in the modulated regions can lead differences of resonant angles for the four spin-valley flavors, manifesting a spin-valley beam splitting effect. The splitting effect is found to be controllable by the gating and strain.

Optical-optical double resonance, laser induced fluorescence, and revision of the signs of the spin-spin constants of the boron carbide (BC) free radical

Energy Technology Data Exchange (ETDEWEB)

Sunahori, Fumie X. [Department of Chemistry and Physics, Franklin College, Franklin, Indiana 46131 (United States); Nagarajan, Ramya; Clouthier, Dennis J., E-mail: dclaser@uky.edu [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055 (United States)

2015-12-14

The cold boron carbide free radical (BC X {sup 4}Σ{sup −}) has been produced in a pulsed discharge free jet expansion using a precursor mixture of trimethylborane in high pressure argon. High resolution laser induced fluorescence spectra have been obtained for the B {sup 4}Σ{sup −}–X {sup 4}Σ{sup −} and E {sup 4}Π–X {sup 4}Σ{sup −} band systems of both {sup 11}BC and {sup 10}BC. An optical-optical double resonance (OODR) scheme was implemented to study the finer details of both band systems. This involved pumping a single rotational level of the B state with one laser and then recording the various allowed transitions from the intermediate B state to the final E state with a second laser by monitoring the subsequent E–X ultraviolet fluorescence. In this fashion, we were able to prove unambiguously that, contrary to previous studies, the spin-spin constant λ is negative in the ground state and positive in the B {sup 4}Σ{sup −} excited state. It has been shown that λ″ < 0 is in fact expected based on a semiempirical second order perturbation theory calculation of the magnitude of the spin-spin constant. The OODR spectra have also been used to validate our assignments of the complex and badly overlapped E {sup 4}Π–X {sup 4}Σ{sup −} 0-0 and 1-0 bands of {sup 11}BC. The E–X 0-0 band of {sup 10}BC was found to be severely perturbed. The ground state main electron configuration is …3σ{sup 2}4σ{sup 2}5σ{sup 1}1π{sup 2}2π{sup 0} and the derived bond lengths show that there is a 0.03 Å contraction in the B state, due to the promotion of an electron from the 4σ antibonding orbital to the 5σ bonding orbital. In contrast, the bond length elongates by 0.15 Å in the E state, a result of promoting an electron from the 5σ bonding orbital to the 2π antibonding orbitals.

Condensate-induced transitions and critical spin chains

NARCIS (Netherlands)

Månsson, T.; Lahtinen, V.; Suorsa, J.; Ardonne, E.

2013-01-01

We show that condensate-induced transitions between two-dimensional topological phases provide a general framework to relate one-dimensional spin models at their critical points. We demonstrate this using two examples. First, we show that two well-known spin chains, namely, the XY chain and the

Induced electrostatic confinement of electron gas in W-designed strain-compensated Si/Si1-x Ge x /Si type-II quantum wells

International Nuclear Information System (INIS)

Sfina, N.; Lazzari, J.-L.; Christol, P.; Cuminal, Y.; Said, M.

2006-01-01

We present a numerical modeling of the conduction- and the valence-band diagrams of W designed Si/Si 0.4 Ge 0.6 /Si type II quantum wells. These W structures, strain-compensated on relaxed Si 0.75 Ge 0.25 pseudo-substrates, are potentially interesting for emission and photo-detection around a 1.55μm wavelength. Two main features have been extrapolated by solving self-consistently Schroedinger and Poisson equations, taking into account the electrostatic attraction induced by carrier injection: (i) Coulomb attraction strongly modifies the band profiles and increases the electron probability density at the quantum well interfaces. (ii) The injected carrier concentration enhances the in-plane oscillator strength and the electron-hole wave-function overlap

Strain and spin-orbit effects in self-assembled quantum dots

International Nuclear Information System (INIS)

Zielinski, M.; Jaskolski, W.; Aizpurua, J.; Bryant, G.W.

2005-01-01

The Effects of strain and spin-orbit interaction in self-assembled lien-shaped InAs/GaAs quantum dots are investigated. Calculations are performed with empirical tight-binding theory supplemented by the valence force field method to account for effects of strain caused by lattice mismatch at the InAs-GaAs interface. It is shown that both effects influence strongly the electron and hole energy structure: splitting of the energy levels, the number of bound states, density distributions, and transition rates. We show that piezoelectric effects are almost negligible in quantum dots of the size investigated. (author)

Interaction of spin and vibrations in transport through single-molecule magnets.

Science.gov (United States)

May, Falk; Wegewijs, Maarten R; Hofstetter, Walter

2011-01-01

We study electron transport through a single-molecule magnet (SMM) and the interplay of its anisotropic spin with quantized vibrational distortions of the molecule. Based on numerical renormalization group calculations we show that, despite the longitudinal anisotropy barrier and small transverse anisotropy, vibrational fluctuations can induce quantum spin-tunneling (QST) and a QST-Kondo effect. The interplay of spin scattering, QST and molecular vibrations can strongly enhance the Kondo effect and induce an anomalous magnetic field dependence of vibrational Kondo side-bands.

Spin-motive Force Induced by Domain Wall Dynamics in the Antiferromagnetic Spin Valve

Science.gov (United States)

Sugano, Ryoko; Ichimura, Masahiko; Takahashi, Saburo; Maekawa, Sadamichi; Crest Collaboration

2014-03-01

In spite of no net magnetization in antiferromagnetic (AF) textures, the local magnetic properties (Neel magnetization) can be manipulated in a similar fashion to ferromagnetic (F) ones. It is expected that, even in AF metals, spin transfer torques (STTs) lead to the domain wall (DW) motion and that the DW motion induces spin-motive force (SMF). In order to study the Neel magnetization dynamics and the resultant SMF, we treat the nano-structured F1/AF/F2 junction. The F1 and F2 leads behave as a spin current injector and a detector, respectively. Each F lead is fixed in the different magnetization direction. Torsions (DW in AF) are introduced reflecting the fixed magnetization of two F leads. We simulated the STT-induced Neel magnetization dynamics with the injecting current from F1 to F2 and evaluate induced SMF. Based on the adiabatic electron dynamics in the AF texture, Langevin simulations are performed at finite temperature. This research was supported by JST, CREST, Japan.

Interface-induced chiral domain walls, spin spirals and skyrmions revealed by spin-polarized scanning tunneling microscopy.

Science.gov (United States)

von Bergmann, Kirsten; Kubetzka, André; Pietzsch, Oswald; Wiesendanger, Roland

2014-10-01

The spin textures of ultra-thin magnetic layers exhibit surprising variety. The loss of inversion symmetry at the interface of the magnetic layer and substrate gives rise to the so-called Dzyaloshinskii-Moriya interaction which favors non-collinear spin arrangements with unique rotational sense. Here we review the application of spin-polarized scanning tunneling microscopy to such systems, which has led to the discovery of interface-induced chiral domain walls and spin spirals. Recently, different interface-driven skyrmion lattices have been found, and the writing as well as the deleting of individual skyrmions based on local spin-polarized current injection has been demonstrated. These interface-induced non-collinear magnetic states offer new exciting possibilities to study fundamental magnetic interactions and to tailor material properties for spintronic applications.

Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

Energy Technology Data Exchange (ETDEWEB)

Dartora, C.A., E-mail: cadartora@eletrica.ufpr.br [Electrical Engineering Department, Federal University of Parana (UFPR), C.P. 19011 Curitiba, 81.531-970 PR (Brazil); Nobrega, K.Z., E-mail: bzuza1@yahoo.com.br [Federal Institute of Education, Science and Technolgy of Maranhão (IFMA), Av. Marechal Castelo Branco, 789, São Luís, 65.076-091 MA (Brazil); Cabrera, G.G., E-mail: cabrera@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), C.P. 6165, Campinas 13.083-970 SP (Brazil)

2016-08-15

Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

Universal spin dynamics in quantum wires

Energy Technology Data Exchange (ETDEWEB)

Fajardo, E. A.; Zülicke, U.; Winkler, R.

2017-10-01

We discuss the universal spin dynamics in quasi-one-dimensional systems including the real spin in narrow-gap semiconductors like InAs and InSb, the valley pseudospin in staggered single-layer graphene, and the combination of real spin and valley pseudospin characterizing single-layer transition metal dichalcogenides (TMDCs) such as MoS2, WS2, MoS2, and WSe2. All these systems can be described by the same Dirac-like Hamiltonian. Spin-dependent observable effects in one of these systems thus have counterparts in each of the other systems. Effects discussed in more detail include equilibrium spin currents, current-induced spin polarization (Edelstein effect), and spin currents generated via adiabatic spin pumping. Our work also suggests that a long-debated spin-dependent correction to the position operator in single-band models should be absent.

Strain-dependent magnetism and electrical conductivity of La1-xSrxCoO3

International Nuclear Information System (INIS)

Zeneli, Orkidia

2011-01-01

In this work, the effects of epitaxial strain and film thickness on the lattice structure, microstructure, magnetization and electrical conduction of La 1-x Sr x CoO 3 (LSCO) (x=0.18 and 0.30) thin films have been studied using thickness-dependent film series on several types of single-crystalline substrates. Alternatively, the direct effect of strain has been probed using a piezoelectric substrate. La 0.7 Sr 0.3 CoO 3 is a ferromagnetic metal, whereas La 0.82 Sr 0.18 CoO 3 is at the phase boundary between the ferromagnetic metal and an insulating spin glass phase. Epitaxial biaxial strain in La 1-x Sr x CoO 3 (x=0.18-0.3) films is known to reduce the ferromagnetic double exchange interactions. It has further been suggested for the control of the crystal field splitting of the Co ions which may be utilized to manipulate the spin state. The LSCO (x = 0.18 and 0.30) films have been grown by pulsed laser deposition (PLD) on substrates of LaAlO 3 , SrTiO 3 , (PbMg 1/3 Nb 2/3 O 3 ) 0.72 (PbTiO 3 ) 0.28 (PMN-PT) and (LaAlO 3 ) 0.3 (Sr 2 TaAlO 6 ) 0.7 (LSAT), which provide different strain states and, in the case of PMN-PT, a reversibly controllable strain. Thickness-dependent series of La 0.82 Sr 0.18 CoO 3 on SrTiO 3 and LaAlO 3 as well as of La 0.7 Sr 0.3 CoO 3 on LSAT have been studied. The lattice parameters of the epitaxially grown films were determined from X-ray diffraction measurements (Bragg-Brentano method and reciprocal space mapping). Large tensile strains of 2% can be achieved in thicker films of up to 100 nm. On the other hand, the films under larger tensile strain have cracks and reveal ordered superstructures in HRTEM images which are tentatively attributed to ordered oxygen vacancies. The Curie temperature and the magnetic moment of the x=0.18 films increases towards larger film thickness in qualitative agreement with the joined effects of strain relaxation and finite thickness on magnetic ordering. In order to separate the direct strain effect from the

Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas

International Nuclear Information System (INIS)

Morrison, C.; Rhead, S. D.; Foronda, J.; Leadley, D. R.; Myronov, M.; Wiśniewski, P.

2014-01-01

We report the observation, through Shubnikov-de Haas oscillations in the magnetoresistance, of spin splitting caused by the Rashba spin-orbit interaction in a strained Ge quantum well epitaxially grown on a standard Si(001) substrate. The Shubnikov-de Haas oscillations display a beating pattern due to the spin split Landau levels. The spin-orbit parameter and Rashba spin-splitting energy are found to be 1.0 × 10 −28   eVm 3 and 1.4 meV, respectively. This energy is comparable to 2D electron gases in III-V semiconductors, but substantially larger than in Si, and illustrates the suitability of Ge for modulated hole spin transport devices.

Electromodulation spectroscopy of direct optical transitions in Ge{sub 1−x}Sn{sub x} layers under hydrostatic pressure and built-in strain

Energy Technology Data Exchange (ETDEWEB)

Dybała, F.; Żelazna, K.; Maczko, H.; Gladysiewicz, M.; Misiewicz, J.; Kudrawiec, R., E-mail: robert.kudrawiec@pwr.wroc.pl [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wrocław (Poland); Lin, H.; Chen, R.; Shang, C.; Huo, Y.; Kamins, T. I.; Harris, J. S. [Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305-4075 (United States)

2016-06-07

Unstrained Ge{sub 1−x}Sn{sub x} layers of various Sn concentration (1.5%, 3%, 6% Sn) and Ge{sub 0.97}Sn{sub 0.03} layers with built-in compressive (ε = −0.5%) and tensile (ε = 0.3%) strain are grown by molecular beam epitaxy and studied by electromodulation spectroscopy (i.e., contactless electroreflectance and photoreflectance (PR)). In order to obtain unstrained GeSn layers and layers with different built-in in-plane strains, virtual InGaAs substrates of different compositions are grown prior to the deposition of GeSn layers. For unstrained Ge{sub 1−x}Sn{sub x} layers, the pressure coefficient for the direct band gap transition is determined from PR measurements at various hydrostatic pressures to be 12.2 ± 0.2 meV/kbar, which is very close to the pressure coefficient for the direct band gap transition in Ge (12.9 meV/kbar). This suggests that the hydrostatic deformation potentials typical of Ge can be applied to describe the pressure-induced changes in the electronic band structure of Ge{sub 1−x}Sn{sub x} alloys with low Sn concentrations. The same conclusion is derived for the uniaxial deformation potential, which describes the splitting between heavy-hole (HH) and light-hole (LH) bands as well as the strain-related shift of the spin-orbit (SO) split-off band. It is observed that the HH, LH, and SO related transitions shift due to compressive and tensile strain according to the Bir-Pikus theory. The dispersions of HH, LH, and SO bands are calculated for compressive and tensile strained Ge{sub 0.97}Sn{sub 0.03} with the 8-band kp Hamiltonian including strain effects, and the mixing of HH and LH bands is discussed. In addition, the dispersion of the electronic band structure is calculated for unstrained Ge{sub 1−x}Sn{sub x} layers (3% and 6% Sn) at high hydrostatic pressure with the 8-band kp Hamiltonian, and the pressure-induced changes in the electronic band structure are discussed.

Influence of mechanical strain on magnetic characteristics of spin valves

International Nuclear Information System (INIS)

Ac, V; Anwarzai, B; Luby, S; Majkova, E

2008-01-01

Giant magnetoresistance (GMR) of Co and Fe-Co based e-beam evaporated spin valves with Cu and Au spacers was studied. The effect of strain on samples, which is detrimental in standard GMR sensors, was measured in a bending configuration. The different dependences of coercivity H c and magnetic field H ip in the point of inflection of MR loops vs. strain were found. For sample with Co/Au/Co core, H c , H ip increase with increasing compressive stress, whereas for sample with FeCo/Cu/Co core they increase with tensile stress. The highest relative change of MR ratio vs. bending in the strain interval ± 300 x 10 -6 is 1-2 % of the basic magnetoresistance and, practically, it does not influence the SV output

Strain-induced recovery of electronic anisotropy in 90°-twisted bilayer phosphorene

Science.gov (United States)

Xie, Jiafeng; Luo, Qiangjun; Jia, Lei; Zhang, Z. Y.; Shi, H. G.; Yang, D. Z.; Si, M. S.

2018-01-01

It is well known that anisotropy determines the preferred transport direction of carriers. To manipulate the anisotropy is an exciting topic in two-dimensional materials, where the carriers are confined within individual layers. In this work, it is found that uniaxial strain can tune the electronic anisotropy of the 90°-twisted bilayer phosphorene. In this unique bilayer structure, the zigzag direction of one layer corresponds to the armchair one of the other layer and vice versa. Owing to this complementary structure, the directional (zigzag or armchair) deformation response to strain of one layer is opposite to that of the other layer, where the in-plane positive Poisson's ratio plays a key role. As a result, the doubly degenerate highest valence bands split, followed by a recovery of anisotropy. More interestingly, such an anisotropy, namely, the ratio of the effective mass along the Γ \\text- X direction to that along the Γ \\text- Y direction, reaches as high as 6 under a small strain of 1%, and keeps nearly unchanged up to a strain of 3%. In addition, high anisotropy only holds for hole carriers as the conduction band is insensitive to strain. These findings should shed new light on the design of semiconducting devices, where the hole acts as the transport carrier.

Transfer induced compressive strain in graphene

DEFF Research Database (Denmark)

Larsen, Martin Benjamin Barbour Spanget; Mackenzie, David; Caridad, Jose

2014-01-01

We have used spatially resolved micro Raman spectroscopy to map the full width at half maximum (FWHM) of the graphene G-band and the 2D and G peak positions, for as-grown graphene on copper catalyst layers, for transferred CVD graphene and for micromechanically exfoliated graphene, in order...... to characterize the effects of a transfer process on graphene properties. Here we use the FWHM(G) as an indicator of the doping level of graphene, and the ratio of the shifts in the 2D and G bands as an indicator of strain. We find that the transfer process introduces an isotropic, spatially uniform, compressive...... strain in graphene, and increases the carrier concentration....

The effects of buoyancy on shear-induced melt bands in a compacting porous medium

Science.gov (United States)

Butler, S. L.

2009-03-01

It has recently been shown [Holtzman, B., Groebner, N., Zimmerman, M., Ginsberg, S., Kohlstedt, D., 2003. Stress-driven melt segregation in partially molten rocks. Geochem. Geophys. Geosyst. 4, Art. No. 8607; Holtzman, B.K., Kohlstedt, D.L., 2007. Stress-driven melt segregation and strain partitioning in partially molten rocks: effects of stress and strain. J. Petrol. 48, 2379-2406] that when partially molten rock is subjected to simple shear, bands of high and low porosity are formed at a particular angle to the direction of instantaneous maximum extension. These have been modeled numerically and it has been speculated that high porosity bands may form an interconnected network with a bulk, effective permeability that is enhanced in a direction parallel to the bands. As a result, the bands may act to focus mantle melt towards the axis of mid-ocean ridges [Katz, R.F., Spiegelman, M., Holtzman, B., 2006. The dynamics of melt and shear localization in partially molten aggregates. Nature 442, 676-679]. In this contribution, we examine the combined effects of buoyancy and matrix shear on a deforming porous layer. The linear theory of Spiegelman [Spiegelman, M., 1993. Flow in deformable porous media. Part 1. Simple analysis. J. Fluid Mech. 247, 17-38; Spiegelman, M., 2003. Linear analysis of melt band formation by simple shear. Geochem. Geophys. Geosyst. 4, doi:10.1029/2002GC000499, Article 8615] and Katz et al. [Katz, R.F., Spiegelman, M., Holtzman, B., 2006. The dynamics of melt and shear localization in partially molten aggregates. Nature 442, 676-679] is generalized to include both the effects of buoyancy and matrix shear on a deformable porous layer with strain-rate dependent rheology. The predictions of linear theory are compared with the early time evolution of our 2D numerical model and they are found to be in excellent agreement. For conditions similar to the upper mantle, buoyancy forces can be similar to or much greater than matrix shear-induced forces. The

Band-gap tunability and dynamical instability in strained monolayer and bilayer phosphorenes

International Nuclear Information System (INIS)

Huang, G Q; Xing, Z W

2015-01-01

Very recently, field-effect transistors based on few-layer phosphorene crystals with a thickness of down to a few nanometres were successfully fabricated, triggering interest in this new functional two-dimensional material. In this work, we apply first-principles calculations to studying the evolution of electronic and phononic structures with out-of-plane strain for monolayer and bilayer phosphorenes. It is found that the vertical stress can be used to tune the band gap of a semiconducting phosphorene in a wide range. On the other hand, the vertical stress can make the phosphorene lattice become dynamically unstable and surface reconstruction or structural phase transition may occur. Due to the interlayer van der Waals coupling, the dynamically stable range of bilayer phosphorene under vertical stress is wider than that of monolayer phosphorene. It is proposed whether or not a semiconductor-semimetal transition occurring in a strained phosphorene is determined not only by its band gap closing, but also by its lattice stability against strain. This information is essential for the strain engineering of phosphorene and future device fabrication. (paper)

Interaction of spin and vibrations in transport through single-molecule magnets

Directory of Open Access Journals (Sweden)

Falk May

2011-10-01

Full Text Available We study electron transport through a single-molecule magnet (SMM and the interplay of its anisotropic spin with quantized vibrational distortions of the molecule. Based on numerical renormalization group calculations we show that, despite the longitudinal anisotropy barrier and small transverse anisotropy, vibrational fluctuations can induce quantum spin-tunneling (QST and a QST-Kondo effect. The interplay of spin scattering, QST and molecular vibrations can strongly enhance the Kondo effect and induce an anomalous magnetic field dependence of vibrational Kondo side-bands.

Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

International Nuclear Information System (INIS)

Kao, Kuo-Hsing; De Meyer, Kristin; Verhulst, Anne S.; Van de Put, Maarten; Soree, Bart; Magnus, Wim; Vandenberghe, William G.

2014-01-01

Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k · p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Γ and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-hole-like valence band is strongly coupling to the conduction band at the Γ point even in the presence of strain based on the 30-band k · p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) μA/μm can be achieved along with on/off ratio > 10 6 for V DD  = 0.5 V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge

Tensile strained Ge tunnel field-effect transistors: k · p material modeling and numerical device simulation

Energy Technology Data Exchange (ETDEWEB)

Kao, Kuo-Hsing; De Meyer, Kristin [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, Katholieke Universiteit Leuven, 3000 Leuven (Belgium); Verhulst, Anne S. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Van de Put, Maarten; Soree, Bart; Magnus, Wim [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Department of Physics, Universiteit Antwerpen, 2000 Antwerpen (Belgium); Vandenberghe, William G. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2014-01-28

Group IV based tunnel field-effect transistors generally show lower on-current than III-V based devices because of the weaker phonon-assisted tunneling transitions in the group IV indirect bandgap materials. Direct tunneling in Ge, however, can be enhanced by strain engineering. In this work, we use a 30-band k · p method to calculate the band structure of biaxial tensile strained Ge and then extract the bandgaps and effective masses at Γ and L symmetry points in k-space, from which the parameters for the direct and indirect band-to-band tunneling (BTBT) models are determined. While transitions from the heavy and light hole valence bands to the conduction band edge at the L point are always bridged by phonon scattering, we highlight a new finding that only the light-hole-like valence band is strongly coupling to the conduction band at the Γ point even in the presence of strain based on the 30-band k · p analysis. By utilizing a Technology Computer Aided Design simulator equipped with the calculated band-to-band tunneling BTBT models, the electrical characteristics of tensile strained Ge point and line tunneling devices are self-consistently computed considering multiple dynamic nonlocal tunnel paths. The influence of field-induced quantum confinement on the tunneling onset is included. Our simulation predicts that an on-current up to 160 (260) μA/μm can be achieved along with on/off ratio > 10{sup 6} for V{sub DD} = 0.5 V by the n-type (p-type) line tunneling device made of 2.5% biaxial tensile strained Ge.

Conduction bands and invariant energy gaps in alkali bromides

NARCIS (Netherlands)

Boer, P.K. de; Groot, R.A. de

1998-01-01

Electronic structure calculations of the alkali bromides LiBr, NaBr, KBr, RbBr and CsBr are reported. It is shown that the conduction band has primarily bromine character. The size of the band gaps of bromides and alkali halides in general is reinterpreted.

Spin electronics

CERN Document Server

Buhrman, Robert; Daughton, James; Molnár, Stephan; Roukes, Michael

2004-01-01

This report is a comparative review of spin electronics ("spintronics") research and development activities in the United States, Japan, and Western Europe conducted by a panel of leading U.S. experts in the field. It covers materials, fabrication and characterization of magnetic nanostructures, magnetism and spin control in magnetic nanostructures, magneto-optical properties of semiconductors, and magnetoelectronics and devices. The panel's conclusions are based on a literature review and a series of site visits to leading spin electronics research centers in Japan and Western Europe. The panel found that Japan is clearly the world leader in new material synthesis and characterization; it is also a leader in magneto-optical properties of semiconductor devices. Europe is strong in theory pertaining to spin electronics, including injection device structures such as tunneling devices, and band structure predictions of materials properties, and in development of magnetic semiconductors and semiconductor heterost...

Current-Induced Spin Polarization at a Single Heterojunction

NARCIS (Netherlands)

Silov, A.; Blajnov, P.; Wolter, J.H.; Hey, R.; Ploog, K.; Averkiev, N.S.; Menendez, J.; Walle, van der C.G.

2005-01-01

We have experimentally achieved spin-polarization by a lateral current in a single non-magnetic semiconductor heterojunction. The effect does not require an applied magnetic field or ferromagnetic contacts. The current-induced spin orientation can be seen as the inverse of the circular

Spin assignment and behavior of superdeformed bands in A∼150 mass region

International Nuclear Information System (INIS)

Khalaf, A.; Sirag, M.; Taha, M.

2012-01-01

The smoothed experimental dynamical moment of inertia J (2) values were fitted with a theoretical version depend on Harris three parameter formula in even power of angular frequency ω, derived for results from cranking model. The expansion parameters were adjusted by using a computer simulated search program. The best expansion parameters from the fit were used to assign the spins of the superdeformed ( SD ) rotational bands (RB ) by integrating the calculated J (2) . The data set include 23 RB's in 11 SD nuclei, which show no evidence of either irregular behavior near the bottom of the bands or abrupt angular momentum at low rotational frequency in the mass region ranging from A= 142 to A = 154. we used the differences of angular momenta at constant frequency as effective alignment. The relative properties of superdeformed rotational bands (SDRB's) are analyzed in terms of the effective alignment of the valence nucleons. The effective alignment is a powerful tool to assign the configurations, to select the identical bands as well as to predict new SD bands from other combination of the orbitals. The ΔI = 2 energy staggering observed in 3 of our selected SDRB's are also described from a smooth reference representing the finite difference approximation to the fourth derivative of the γ-ray transition energies.

Theory of in-plane current induced spin torque in metal/ferromagnet bilayers

Science.gov (United States)

Sakanashi, Kohei; Sigrist, Manfred; Chen, Wei

2018-05-01

Using a semiclassical approach that simultaneously incorporates the spin Hall effect (SHE), spin diffusion, quantum well states, and interface spin–orbit coupling (SOC), we address the interplay of these mechanisms as the origin of the spin–orbit torque (SOT) induced by in-plane currents, as observed in the normal metal/ferromagnetic metal bilayer thin films. Focusing on the bilayers with a ferromagnet much thinner than its spin diffusion length, such as Pt/Co with  ∼10 nm thickness, our approach addresses simultaneously the two contributions to the SOT, namely the spin-transfer torque (SHE-STT) due to SHE-induced spin injection, and the inverse spin Galvanic effect spin–orbit torque (ISGE-SOT) due to SOC-induced spin accumulation. The SOC produces an effective magnetic field at the interface, hence it modifies the angular momentum conservation expected for the SHE-STT. The SHE-induced spin voltage and the interface spin current are mutually dependent and, hence, are solved in a self-consistent manner. The result suggests that the SHE-STT and ISGE-SOT are of the same order of magnitude, and the spin transport mediated by the quantum well states may be an important mechanism for the experimentally observed rapid variation of the SOT with respect to the thickness of the ferromagnet.

Atomic scale images of acceptors in III-V semiconductors. Band bending, tunneling paths and wave functions

Energy Technology Data Exchange (ETDEWEB)

Loth, S.

2007-10-26

This thesis reports measurements of single dopant atoms in III-V semiconductors with low temperature Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS). It investigates the anisotropic spatial distribution of acceptor induced tunneling processes at the {l_brace}110{r_brace} cleavage planes. Two different tunneling processes are identified: conventional imaging of the squared acceptor wave function and resonant tunneling at the charged acceptor. A thorough analysis of the tip induced space charge layers identifies characteristic bias windows for each tunnel process. The symmetry of the host crystal's band structure determines the spatial distribution of the tunneling paths for both processes. Symmetry reducing effects at the surface are responsible for a pronounced asymmetry of the acceptor contrasts along the principal [001] axis. Uniaxial strain fields due to surface relaxation and spin orbit interaction of the tip induced electric field are discussed on the basis of band structure calculations. High-resolution STS studies of acceptor atoms in an operating p-i-n diode confirm that an electric field indeed changes the acceptor contrasts. In conclusion, the anisotropic contrasts of acceptors are created by the host crystal's band structure and concomitant symmetry reduction effects at the surface. (orig.)

Reversible spin texture in ferroelectric Hf O2

Science.gov (United States)

Tao, L. L.; Paudel, Tula R.; Kovalev, Alexey A.; Tsymbal, Evgeny Y.

2017-06-01

Spin-orbit coupling effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible a nonvolatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, Hf O2 , which has been shown to exhibit robust ferroelectricity in a noncentrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric Hf O2 and demonstrate the appearance of chiral spin textures driven by spin-orbit coupling. We analyze these spin configurations in terms of the Rashba and Dresselhaus effects within the k .p Hamiltonian model and find that the Rashba-type spin texture dominates around the valence-band maximum, while the Dresselhaus-type spin texture prevails around the conduction band minimum. The latter is characterized by a very large Dresselhaus constant λD= 0.578 eV Å, which allows using this material as a tunnel barrier to produce tunneling anomalous and spin Hall effects that are reversible by ferroelectric polarization.

Proximity Band Structure and Spin Textures on Both Sides of Topological-Insulator/Ferromagnetic-Metal Interface and Their Charge Transport Probes.

Science.gov (United States)

Marmolejo-Tejada, Juan Manuel; Dolui, Kapildeb; Lazić, Predrag; Chang, Po-Hao; Smidstrup, Søren; Stradi, Daniele; Stokbro, Kurt; Nikolić, Branislav K

2017-09-13

The control of recently observed spintronic effects in topological-insulator/ferromagnetic-metal (TI/FM) heterostructures is thwarted by the lack of understanding of band structure and spin textures around their interfaces. Here we combine density functional theory with Green's function techniques to obtain the spectral function at any plane passing through atoms of Bi 2 Se 3 and Co or Cu layers comprising the interface. Instead of naively assumed Dirac cone gapped by the proximity exchange field spectral function, we find that the Rashba ferromagnetic model describes the spectral function on the surface of Bi 2 Se 3 in contact with Co near the Fermi level E F 0 , where circular and snowflake-like constant energy contours coexist around which spin locks to momentum. The remnant of the Dirac cone is hybridized with evanescent wave functions from metallic layers and pushed, due to charge transfer from Co or Cu layers, a few tenths of an electron-volt below E F 0 for both Bi 2 Se 3 /Co and Bi 2 Se 3 /Cu interfaces while hosting distorted helical spin texture wounding around a single circle. These features explain recent observation of sensitivity of spin-to-charge conversion signal at TI/Cu interface to tuning of E F 0 . Crucially for spin-orbit torque in TI/FM heterostructures, few monolayers of Co adjacent to Bi 2 Se 3 host spectral functions very different from the bulk metal, as well as in-plane spin textures (despite Co magnetization being out-of-plane) due to proximity spin-orbit coupling in Co induced by Bi 2 Se 3 . We predict that out-of-plane tunneling anisotropic magnetoresistance in Cu/Bi 2 Se 3 /Co vertical heterostructure can serve as a sensitive probe of the type of spin texture residing at E F 0 .

Field-induced spin splitting and anomalous photoluminescence circular polarization in C H3N H3Pb I3 films at high magnetic field

Science.gov (United States)

Zhang, Chuang; Sun, Dali; Yu, Zhi-Gang; Sheng, Chuan-Xiang; McGill, Stephen; Semenov, Dmitry; Vardeny, Zeev Valy

2018-04-01

The organic-inorganic hybrid perovskites show excellent optical and electrical properties for photovoltaic and a myriad of other optoelectronics applications. Using high-field magneto-optical measurements up to 17.5 T at cryogenic temperatures, we have studied the spin-dependent optical transitions in the prototype C H3N H3Pb I3 , which are manifested in the field-induced circularly polarized photoluminescence emission. The energy splitting between left and right circularly polarized emission bands is measured to be ˜1.5 meV at 17.5 T, from which we obtained an exciton effective g factor of ˜1.32. Also from the photoluminescence diamagnetic shift we estimate the exciton binding energy to be ˜17 meV at low temperature. Surprisingly, the corresponding field-induced circular polarization is "anomalous" in that the photoluminescence emission of the higher split energy band is stronger than that of the lower split band. This "reversed" intensity ratio originates from the combination of long electron spin relaxation time and hole negative g factor in C H3N H3Pb I3 , which are in agreement with a model based on the k.p effective-mass approximation.

Dipole bands in high spin states of {sub 57}{sup 135}La{sub 78}

Energy Technology Data Exchange (ETDEWEB)

Garg, Ritika; Kumar, S.; Saxena, Mansi; Goyal, Savi; Siwal, Davinder; Verma, S.; Mandal, S. [Department of Physics and Astrophysics, University of Delhi, Delhi - 110007 (India); Palit, R.; Saha, Sudipta; Sethi, J.; Sharma, Sushil K.; Trivedi, T.; Jadav, S. K.; Donthi, R.; Naidu, B. S. [Department of Nuclear and Atomic Physics, Tata Institute of Fundamental Research, Mumbai - 400005 (India)

2014-08-14

High spin states of {sup 135}La have been investigated using the reaction {sup 128}Te({sup 11}B,4n){sup 135}La at a beam energy of 50.5 MeV. Two negative parity dipole bands (ΔI = 1) have been established. Crossover E2 transitions have been observed for the first time in one of the dipole bands. For the Tilted Axis Cranking (TAC) calculations, a three-quasiparticle (3qp) configuration π(h{sub 11/2}){sup 1}⊗ν(h{sub 11/2}){sup −2} and a five-quasiparticle (5qp) configuration π(h{sub 11/2}){sup 1}(g{sub 7/2}/d{sub 5/2}){sup 2}⊗ν(h{sub 11/2}){sup −2} have been taken for the two negative parity dipole bands. The comparison of experimental observables with TAC calculations supports the configuration assignments for both the dipole bands.

Rashba effect and enriched spin-valley coupling in Ga X /M X2 (M = Mo, W; X = S, Se, Te) heterostructures

Science.gov (United States)

Zhang, Qingyun; Schwingenschlögl, Udo

2018-04-01

Using first-principles calculations, we investigate the electronic properties of the two-dimensional Ga X /MX 2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between Ga X and MX 2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K' valleys (out-of-plane spin direction) makes Ga X /MX 2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

Electric-field effects in optically generated spin transport

International Nuclear Information System (INIS)

Miah, M. Idrish

2009-01-01

Transport of spin-polarized electrons in semiconductors is studied experimentally. Spins are generated by optical excitation because of the selection rules governing optical transitions from heavy-hole and light-hole states to conduction-band states. Experiments designed for the control of spins in semiconductors investigate the bias-dependent spin transport process and detect the spin-polarized electrons during transport. A strong bias dependence is observed. The electric-field effects on the spin-polarized electron transport are also found to be depended on the excitation photon energy and temperature. Based on a field-dependent spin relaxation mechanism, the electric-field effects in the transport process are discussed.

Electric-field effects in optically generated spin transport

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2009-05-25

Transport of spin-polarized electrons in semiconductors is studied experimentally. Spins are generated by optical excitation because of the selection rules governing optical transitions from heavy-hole and light-hole states to conduction-band states. Experiments designed for the control of spins in semiconductors investigate the bias-dependent spin transport process and detect the spin-polarized electrons during transport. A strong bias dependence is observed. The electric-field effects on the spin-polarized electron transport are also found to be depended on the excitation photon energy and temperature. Based on a field-dependent spin relaxation mechanism, the electric-field effects in the transport process are discussed.

On induced action for conformal higher spins in curved background

Energy Technology Data Exchange (ETDEWEB)

Beccaria, Matteo, E-mail: matteo.beccaria@le.infn.it [Dipartimento di Matematica e Fisica Ennio De Giorgi, Università del Salento & INFN, Via Arnesano, 73100 Lecce (Italy); Tseytlin, Arkady A., E-mail: tseytlin@imperial.ac.uk [The Blackett Laboratory, Imperial College, London SW7 2AZ (United Kingdom)

2017-06-15

We continue the investigation of the structure of the action for a tower of conformal higher spin fields in non-trivial 4d background metric recently discussed in Grigoriev and Tseytlin (2016). The action is defined as an induced one from path integral of a conformal scalar field in curved background coupled to higher spin fields. We analyze in detail the dependence of the quadratic part of the induced action on the spin 1 and spin 3 fields, determining the presence of a curvature-dependent mixed spin 1–3 term. One consequence is that the pure spin 3 kinetic term cannot be gauge-invariant on its own beyond the leading term in small curvature expansion. We also compute the non-zero contribution of the 1–3 mixing term to the conformal anomaly c-coefficient. One is thus to determine all such mixing terms before addressing the question of possible vanishing of the total c-coefficient in the conformal higher spin theory.

On induced action for conformal higher spins in curved background

Directory of Open Access Journals (Sweden)

Matteo Beccaria

2017-06-01

Full Text Available We continue the investigation of the structure of the action for a tower of conformal higher spin fields in non-trivial 4d background metric recently discussed in Grigoriev and Tseytlin (2016 [15]. The action is defined as an induced one from path integral of a conformal scalar field in curved background coupled to higher spin fields. We analyze in detail the dependence of the quadratic part of the induced action on the spin 1 and spin 3 fields, determining the presence of a curvature-dependent mixed spin 1–3 term. One consequence is that the pure spin 3 kinetic term cannot be gauge-invariant on its own beyond the leading term in small curvature expansion. We also compute the non-zero contribution of the 1–3 mixing term to the conformal anomaly c-coefficient. One is thus to determine all such mixing terms before addressing the question of possible vanishing of the total c-coefficient in the conformal higher spin theory.

Group IV all-semiconductor spintronics. Materials aspects and optical spin selection rules

Energy Technology Data Exchange (ETDEWEB)

Sircar, Narayan

2012-04-03

In the scope of the present thesis various aspects for the realization of spintronic applications based on group IV semiconductors are discussed. This work comprises a refined material characterization of the magnetic semiconductor GeMn. We furthermore present efforts to utilize this material as spin injector for a Si-based optical spintronic device. Applying transmission electron microscopy and atom probe tomography, we are able to resolve a vertical anisotropy in the self-assembly, leading to the stacking of well-defined clusters in the growth direction. Three-dimensional atom distribution maps confirm that clusters are built from a nonstoichiometric GeMn alloy and exhibit a high-Mn-concentration core with a decreasing Mn concentration toward a shell. An amorphous nature of the cluster cores as well as the crystallinity of the shells, coherent with the surrounding Ge lattice, are revealed in scanning transmission electron microscopy. We localize a strain field surrounding each GeMn cluster by scanning transmission electron microscopy. The importance of strain to the stacking phenomenon of the clusters becomes clear in studies of Ge/GeMn superlattice structures, where a vertical spatial correlation of clusters over 30 nm-thick Ge spacer layers is observed. We present evidence that electrical transport properties of the p-type GeMn thin films fabricated on high-resistivity Ge substrates are severely influenced by parallel conduction through the substrate. It is shown that substrate conduction persists also for wellconducting degenerate p-type reference thin films, giving rise to an effective two-layer conduction scheme. GeMn thin films fabricated on these substrates exhibit only a negligible magnetoresistance effect. Before integrating GeMn in an optical spintronic device, some key aspects important for an understanding of the optical injection and detection of carrier spins in Si and Si-based heterostructures are clarified in the second part of this thesis. In

Illuminating "spin-polarized" Bloch wave-function projection from degenerate bands in decomposable centrosymmetric lattices

Science.gov (United States)

Li, Pengke; Appelbaum, Ian

2018-03-01

The combination of space inversion and time-reversal symmetries results in doubly degenerate Bloch states with opposite spin. Many lattices with these symmetries can be constructed by combining a noncentrosymmetric potential (lacking this degeneracy) with its inverted copy. Using simple models, we unravel the evolution of local spin splitting during this process of inversion symmetry restoration, in the presence of spin-orbit interaction and sublattice coupling. Importantly, through an analysis of quantum mechanical commutativity, we examine the difficulty of identifying states that are simultaneously spatially segregated and spin polarized. We also explain how surface-sensitive experimental probes (such as angle-resolved photoemission spectroscopy, or ARPES) of "hidden spin polarization" in layered materials are susceptible to unrelated spin splitting intrinsically induced by broken inversion symmetry at the surface.

Electronic properties of polycrystalline graphene under large local strain

International Nuclear Information System (INIS)

He, Xin; Tang, Ning; Duan, Junxi; Mei, Fuhong; Meng, Hu; Lu, Fangchao; Xu, Fujun; Yang, Xuelin; Gao, Li; Wang, Xinqiang; Shen, Bo; Ge, Weikun

2014-01-01

To explore the transport properties of polycrystalline graphene under large tensile strain, a strain device has been fabricated using piezocrystal to load local strain onto graphene, up to 22.5%. Ionic liquid gate whose capability of tuning carrier density being much higher than that of a solid gate is used to survey the transfer characteristics of the deformed graphene. The conductance of the Dirac point and field effect mobility of electrons and holes is found to decrease with increasing strain, which is attributed to the scattering of the graphene grain boundaries, the strain induced change of band structure, and defects. However, the transport gap is still not opened. Our study is helpful to evaluate the application of graphene in stretchable electronics.

Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene

Science.gov (United States)

Prarokijjak, Worasak; Soodchomshom, Bumned

2018-04-01

Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TB's are controlled by electric, exchange fields and circularly polarized light. As a result, we find that by applying electric and exchange fields, four groups of spin-valley currents are perfectly filtered, directly induced by topological phase transitions. Control of currents, carried by single, double and triple channels of spin-valley electrons in silicene junction, may be achievable by adjusting magnitudes of electric, exchange fields and circularly polarized light. We may identify that the key factor behind the spin-valley current filtered at the transition points may be due to zero and non-zero Chern numbers. Electrons that are allowed to transport at the transition points must obey zero-Chern number which is equivalent to zero mass and zero-Berry's curvature, while electrons with non-zero Chern number are perfectly suppressed. Very large magnetoresistance dips are found directly induced by topological phase transition points. Our study also discusses the effect of spin-valley dependent Hall conductivity at the transition points on ballistic transport and reveals the potential of silicene as a topological material for spin-valleytronics.

Strain engineered magnetic tunnel junctions and spin-orbit torque switching (Conference Presentation)

Science.gov (United States)

Wu, Yang; Narayanapillai, Kulothungasagaran; Elyasi, Mehrdad; Qiu, Xuepeng; Yang, Hyunsoo

2016-10-01

The efficient generation of pure spin currents and manipulation of the magnetization dynamics of magnetic structures is of central importance in the field of spintronics. The spin-orbit effect is one of the promising ways to generate spin currents, in which a charge current can be converted to a transverse spin current due to the spin-orbit interaction. We investigate the spin dynamics in the presence of strong spin-orbit coupling materials such as LaAlO3/SrTiO3 oxide heterostructures. Angle dependent magnetoresistance measurements are employed to detect and understand the current-induced spin-orbit torques, and an effective field of 2.35 T is observed for a dc-current of 200 uA. In order to understand the interaction between light and spin currents, we use a femtosecond laser to excite an ultrafast transient spin current and subsequent terahertz (THz) emission in nonmagnet (NM)/ferromagnet (FM)/oxide heterostructures. The THz emission strongly relies on spin-orbit interaction, and is tailored by the magnitude and sign of the effective spin Hall angle of the NM. Our results can be utilized for ultrafast spintronic devices and tunable THz sources.

Scaling behavior of the spin pumping effect in conductive ferromagnet/platinum bilayers

Energy Technology Data Exchange (ETDEWEB)

Czeschka, Franz D.; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Dreher, Lukas; Brandt, Martin S. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Imort, Inga-Mareen; Reiss, Guenter; Thomas, Andy [Fakultaet fuer Physik, Universitaet Bielefeld (Germany); Schoch, Wladimir; Limmer, Wolfgang [Abteilung Halbleiterphysik, Universitaet Ulm (Germany)

2011-07-01

Spin pumping experiments allow to measure spin currents or the spin Hall angle. We have systematically studied the spin pumping DC voltage occurring in conjunction with ferromagnetic resonance in a series of conductive ferromagnet/platinum bilayers, made from elemental 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors. In all bilayers, we invariably observe the same DC voltage polarity. Moreover, we find that the voltage magnitude scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism, and the charge carrier type in a given ferromagnet. These findings quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect, and establish spin pumping as a generic phenomenon.

Strain distributions and their influence on electronic structures of WSe2-MoS2 laterally strained heterojunctions

Science.gov (United States)

Zhang, Chendong; Li, Ming-Yang; Tersoff, Jerry; Han, Yimo; Su, Yushan; Li, Lain-Jong; Muller, David A.; Shih, Chih-Kang

2018-02-01

Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p-n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2-MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2-MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2-MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

Longitudinal and spin Hall conductance of a one-dimensional Aharonov-Bohm ring

International Nuclear Information System (INIS)

Moca, Catalin Pascu; Marinescu, D C

2006-01-01

The longitudinal and spin Hall conductances of an electron gas with Rashba-Dresselhaus spin-orbit interaction, confined to a quasi-one-dimensional Aharonov-Bohm ring, are studied as functions of disorder and magnetic flux. The system is mapped onto a one-dimensional virtual lattice and is described, in a tight binding approximation, by a Hamiltonian that depends parametrically on the nearest neighbour hopping integral t, the Rashba spin-orbit coupling V R , the Dresselhaus spin-orbit coupling V D and an Anderson-like, on-site disorder energy strength W. Numerical results are obtained within a spin dependent Landauer-Buettiker formalism

Spin-Current-Controlled Modulation of the Magnon Spin Conductance in a Three-Terminal Magnon Transistor

Science.gov (United States)

Cornelissen, L. J.; Liu, J.; van Wees, B. J.; Duine, R. A.

2018-03-01

Efficient manipulation of magnon spin transport is crucial for developing magnon-based spintronic devices. In this Letter, we provide proof of principle of a method for modulating the diffusive transport of thermal magnons in an yttrium iron garnet channel between injector and detector contacts. The magnon spin conductance of the channel is altered by increasing or decreasing the magnon chemical potential via spin Hall injection of magnons by a third modulator electrode. We obtain a modulation efficiency of 1.6 %/mA at T =250 K . Finite element modeling shows that this could be increased to well above 10 %/mA by reducing the thickness of the channel, providing interesting prospects for the development of thermal-magnon-based logic circuits.

Electronic transport through EuO spin-filter tunnel junctions

KAUST Repository

Jutong, Nuttachai

2012-11-12

Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.

Electric and magnetic field modulated energy dispersion, conductivity and optical response in double quantum wire with spin-orbit interactions

Science.gov (United States)

Karaaslan, Y.; Gisi, B.; Sakiroglu, S.; Kasapoglu, E.; Sari, H.; Sokmen, I.

2018-02-01

We study the influence of electric field on the electronic energy band structure, zero-temperature ballistic conductivity and optical properties of double quantum wire. System described by double-well anharmonic confinement potential is exposed to a perpendicular magnetic field and Rashba and Dresselhaus spin-orbit interactions. Numerical results show up that the combined effects of internal and external agents cause the formation of crossing, anticrossing, camel-back/anomaly structures and the lateral, downward/upward shifts in the energy dispersion. The anomalies in the energy subbands give rise to the oscillation patterns in the ballistic conductance, and the energy shifts bring about the shift in the peak positions of optical absorption coefficients and refractive index changes.

Conductivity of a spin-polarized two-dimensional hole gas at very low temperature

Energy Technology Data Exchange (ETDEWEB)

Dlimi, S., E-mail: kaaouachi21@yahoo.fr; Kaaouachi, A. El, E-mail: kaaouachi21@yahoo.fr; Limouny, L., E-mail: kaaouachi21@yahoo.fr; Sybous, A.; Narjis, A.; Errai, M.; Daoudi, E. [Research Group ESNPS , Physics department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir (Morocco); Idrissi, H. El [Faculté des Sciences et Techniques de Mohammedia, Département de physique. BP 146 Quartier Yasmina Mohammedia (Morocco); Zatni, A. [Laboratoire MSTI. Ecole de technologied' Agadir, B.P33/S Agadir (Morocco)

2014-01-27

In the ballistic regime where k{sub B}Tτ / ħ ≥1, the temperature dependence of the metallic conductivity in a two-dimensional hole system of gallium arsenide, is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just before the onset of complete spin polarization, but reappears again in the fully spin-polarized state, being, however, suppressed relative to the zero magnetic field case. The analysis of the degree of suppression can distinguish between screening and interaction-based theories. We show that in a fully polarized spin state, the effects of disorder are dominant and approach a strong localization regime, which is contrary to the behavior of 2D electron systems in a weakly disordered unpolarized state. It was found that the elastic relaxation time correction, depending on the temperature, changed significantly with the degree of spin polarization, to reach a minimum just below the start of the spin-polarized integer, where the conductivity is practically independent of temperature.

Compressive strain induced enhancement in thermoelectric-power-factor in monolayer MoS2 nanosheet

International Nuclear Information System (INIS)

Dimple; Jena, Nityasagar; De Sarkar, Abir

2017-01-01

Strain and temperature induced tunability in the thermoelectric properties in monolayer MoS 2 (ML-MoS 2 ) has been demonstrated using density functional theory coupled to semi-classical Boltzmann transport theory. Compressive strain, in general and uniaxial compressive strain (along the zig-zag direction), in particular, is found to be most effective in enhancing the thermoelectric power factor, owing to the higher electronic mobility and its sensitivity to lattice compression along this direction. Variation in the Seebeck coefficient and electronic band gap with strain is found to follow the Goldsmid–Sharp relation. n-type doping is found to raise the relaxation time-scaled thermoelectric power factor higher than p-type doping and this divide widens with increasing temperature. The relaxation time-scaled thermoelectric power factor in optimally n-doped ML-MoS 2 is found to undergo maximal enhancement under the application of 3% uniaxial compressive strain along the zig-zag direction, when both the ( direct ) electronic band gap and the Seebeck coefficient reach their maximum, while the electron mobility drops down drastically from 73.08 to 44.15 cm 2 V −1 s −1 . Such strain sensitive thermoelectric responses in ML-MoS 2 could open doorways for a variety of applications in emerging areas in 2D-thermoelectrics, such as on-chip thermoelectric power generation and waste thermal energy harvesting. (paper)

Terahertz radiation by subpicosecond spin-polarized photocurrent originating from Dirac electrons in a Rashba-type polar semiconductor

Science.gov (United States)

Kinoshita, Yuto; Kida, Noriaki; Miyamoto, Tatsuya; Kanou, Manabu; Sasagawa, Takao; Okamoto, Hiroshi

2018-04-01

The spin-splitting energy bands induced by the relativistic spin-orbit interaction in solids provide a new opportunity to manipulate the spin-polarized electrons on the subpicosecond timescale. Here, we report one such example in a bulk Rashba-type polar semiconductor BiTeBr. Strong terahertz electromagnetic waves are emitted after the resonant excitation of the interband transition between the Rashba-type spin-splitting energy bands with a femtosecond laser pulse circularly polarized. The phase of the emitted terahertz waves is reversed by switching the circular polarization. This suggests that the observed terahertz radiation originates from the subpicosecond spin-polarized photocurrents, which are generated by the asymmetric depopulation of the Dirac state. Our result provides a way for the current-induced terahertz radiation and its phase control by the circular polarization of incident light without external electric fields.

Majorana spin in magnetic atomic chain systems

Science.gov (United States)

Li, Jian; Jeon, Sangjun; Xie, Yonglong; Yazdani, Ali; Bernevig, B. Andrei

2018-03-01

In this paper, we establish that Majorana zero modes emerging from a topological band structure of a chain of magnetic atoms embedded in a superconductor can be distinguished from trivial localized zero energy states that may accidentally form in this system using spin-resolved measurements. To demonstrate this key Majorana diagnostics, we study the spin composition of magnetic impurity induced in-gap Shiba states in a superconductor using a hybrid model. By examining the spin and spectral densities in the context of the Bogoliubov-de Gennes (BdG) particle-hole symmetry, we derive a sum rule that relates the spin densities of localized Shiba states with those in the normal state without superconductivity. Extending our investigations to a ferromagnetic chain of magnetic impurities, we identify key features of the spin properties of the extended Shiba state bands, as well as those associated with a localized Majorana end mode when the effect of spin-orbit interaction is included. We then formulate a phenomenological theory for the measurement of the local spin densities with spin-polarized scanning tunneling microscopy (STM) techniques. By combining the calculated spin densities and the measurement theory, we show that spin-polarized STM measurements can reveal a sharp contrast in spin polarization between an accidental-zero-energy trivial Shiba state and a Majorana zero mode in a topological superconducting phase in atomic chains. We further confirm our results with numerical simulations that address generic parameter settings.

Quantum computing with acceptor spins in silicon.

Science.gov (United States)

Salfi, Joe; Tong, Mengyang; Rogge, Sven; Culcer, Dimitrie

2016-06-17

The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can be designed. Whereas a light-hole spin qubit was introduced recently (arXiv:1508.04259), here we present analytical and numerical results proving that a heavy-hole spin qubit can be reliably initialised, rotated and entangled by electrical means alone. This is due to strong Rashba-like spin-orbit interaction terms enabled by the interface inversion asymmetry. Single qubit rotations rely on electric-dipole spin resonance (EDSR), which is strongly enhanced by interface-induced spin-orbit terms. Entanglement can be accomplished by Coulomb exchange, coupling to a resonator, or spin-orbit induced dipole-dipole interactions. By analysing the qubit sensitivity to charge noise, we demonstrate that interface-induced spin-orbit terms are responsible for sweet spots in the dephasing time [Formula: see text] as a function of the top gate electric field, which are close to maxima in the EDSR strength, where the EDSR gate has high fidelity. We show that both qubits can be described using the same starting Hamiltonian, and by comparing their properties we show that the complex interplay of bulk and interface-induced spin-orbit terms allows a high degree of electrical control and makes acceptors potential candidates for scalable quantum computation in Si.

Spin excitation and band-narrowing in AlxGa1-xAs heterostructures

International Nuclear Information System (INIS)

Miah, M. Idrish

2010-01-01

We studied the spin excitation in dependences of the applied electric field and lattice temperature (LT) via the measurements of the circularly polarized photoluminescence (CPPL) in Al x Ga 1-x As heterostructures (HSs). The intensity of CPPL was found to strongly depend on the electric field applied to the HSs. The CPPL was also found to enhance with decreasing LT. It was demonstrated that the observed LT dependence might be due to the LT-dependent band-gap shift of the HS materials.

Heterostructures for Realizing Magnon-Induced Spin Transfer Torque

Directory of Open Access Journals (Sweden)

P. B. Jayathilaka

2012-01-01

Full Text Available This work reports efforts fabricating heterostructures of different materials relevant for the realization of magnon-induced spin transfer torques. We find the growth of high-quality magnetite on MgO substrates to be straightforward, while using transition metal buffer layers of Fe, Cr, Mo, and Nb can alter the structural and magnetic properties of the magnetite. Additionally, we successfully fabricated and characterized Py/Cr/Fe3O4 and Fe3O4/Cr/Fe3O4 spin valve structures. For both, we observe a relatively small giant magnetoresistance and confirm an inverse dependence on spacer layer thickness. Thus, we have shown certain materials combinations that may form the heterostructures that are the building blocks necessary to achieve magnon-induced spin transfer torque devices.

Effect of cubic Dresselhaus interaction on the longitudinal optical conductivity of a spin-orbit coupled system

Science.gov (United States)

Cruz, Elmer; López-Bastidas, Catalina; Maytorena, Jesús A.

2018-03-01

We investigate the effect of the oft-neglected cubic terms of the Dresselhaus spin-orbit coupling on the longitudinal current response of a two-dimensional electron gas with both Rashba and linear Dresselhaus interactions. For a quantum well grown in the [001] direction, the changes caused by these nonlinear-in-momentum terms on the absorption spectrum become more notable under SU(2) symmetry conditions, when the Rashba and linear Dresselhaus coupling strengths are tuned to be equal. The longitudinal optical response no longer vanishes then and shows a strong dependence on the direction of the externally applied electric field, giving a signature of the relative size of several spin-orbit contributions. This anisotropic response arises from the nonisotropic splitting of the spin states induced by the interplay of Rashba and Dresselhaus couplings. However, the presence of cubic terms introduces characteristic spectral features and can modify the overall shape of the spectra for some values of the relative sizes of the spin-orbit parameters. We compare this behavior to the case of a sample with [110] crystal orientation which, under conditions of spin-preserving symmetry, has a collinear spin-orbit vector field that leads to vanishing conductivity, even in the presence of cubic terms. In addition to the control through the driven frequency or electrical gating, such a directional aspect of the current response suggests new ways of manipulation and supports the use of interband optics as a sensitive probe of spin-orbit mechanisms in semiconductor spintronics.

Thickness dependence of the strain, band gap and transport properties of epitaxial In{sub 2}O{sub 3} thin films grown on Y-stabilised ZrO{sub 2}(111)

Energy Technology Data Exchange (ETDEWEB)

Zhang, K H L; Oropeza, F E; Egdell, R G [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford OX1 3TA (United Kingdom); Lazarov, V K [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Veal, T D; McConville, C F [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Walsh, A, E-mail: Russell.egdell@chem.ox.ac.uk [Department of Chemistry, Kathleen Lonsdale Materials Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom)

2011-08-24

Epitaxial films of In{sub 2}O{sub 3} have been grown on Y-stabilised ZrO{sub 2}(111) substrates by molecular beam epitaxy over a range of thicknesses between 35 and 420 nm. The thinnest films are strained, but display a 'cross-hatch' morphology associated with a network of misfit dislocations which allow partial accommodation of the lattice mismatch. With increasing thickness a 'dewetting' process occurs and the films break up into micron sized mesas, which coalesce into continuous films at the highest coverages. The changes in morphology are accompanied by a progressive release of strain and an increase in carrier mobility to a maximum value of 73 cm{sup 2} V{sup -1} s{sup -1}. The optical band gap in strained ultrathin films is found to be smaller than for thicker films. Modelling of the system, using a combination of classical pair-wise potentials and ab initio density functional theory, provides a microscopic description of the elastic contributions to the strained epitaxial growth, as well as the electronic effects that give rise to the observed band gap changes. The band gap increase induced by the uniaxial compression is offset by the band gap reduction associated with the epitaxial tensile strain.

Investigation on seasonal variation of thermal-induced strain in flexible pavements based on field and laboratory measurements

Directory of Open Access Journals (Sweden)

Simita Biswas

2016-09-01

Full Text Available Pavement temperature variation has a large influence on the structural response of flexible pavements. Daily and seasonal temperature fluctuation causes expansion and contraction of pavement material, which then leads to the generation of thermal strain. In this study, field observation and laboratory tests were conducted to investigate seasonal variation of thermal-induced strain in flexible pavement. Field observations were conducted at the Integrated Road Research Facility (IRRF’s test road in Edmonton, Alberta, Canada, which is fully equipped with structural and environmental monitoring instruments. The main objective of the field study was to compare the variation of thermal-induced strain in warm and cold seasons. Field results indicated that thermal-induced strain is 1.4–2.0 times greater in cold seasons than in warm seasons following the same pavement temperature variations; however, strain generation rate was greater in warm seasons. Laboratory testing of asphalt slab and cylindrical samples produced comparable ratios. Moreover, field observation and laboratory testing showed a similar trend of temperature and thermal strain variations. Keywords: Thermal-induced strain, Asphalt strain gauge, Field observation, Flexible pavement, Laboratory testing, Seasonal variation

Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer

Science.gov (United States)

Bahuguna, Bhagwati Prasad; Saini, L. K.; Sharma, Rajesh O.; Tiwari, Brajesh

2018-05-01

We investigate the strain and electric field dependent electronic properties of two dimensional Ga-based group III-V monolayer from the first-principles approach within density functional theory. The energy bandgap of GaX monolayer increases upto the certain value of compressive strain and then decreases. On the other hand, the energy bandgap of GaX monolayer is monotonically decreased with increasing tensile strain and become metallic at the higher value. Furthermore, the perpendicular electric field decreases the energy band gap of unstrained GaX monolayer and shows semiconductor to metal transition. These results suggest that the nature of energy bands and value of energy bandgap in GaX monolayer can be tuned by the biaxial mechanical strain or perpendicular electrical field. Additionally, we have also studied the optical response of unstrained GaX monolayer in term of optical conductivity. These findings may provide valuable information to develop the Ga-based optoelectronic devices and further the understanding of the GaX monolayer.

Reduction of ballistic spin scattering in a spin-FET using stray electric fields

International Nuclear Information System (INIS)

Nemnes, G A; Manolescu, A; Gudmundsson, V

2012-01-01

The quasi-bound states which appear as a consequence of the Rashba spin-orbit (SO) coupling, introduce a strongly irregular behavior of the spin-FET conductance at large Rashba parameter. Moreover, the presence of the bulk inversion asymmetry, i.e. the Dresselhaus SO coupling, may compromise the spin-valve effect even at small values of the Rashba parameter. However, by introducing stray electric fields in addition to the SO couplings, we show that the effect of the SO induced quasi-bound states can be tuned. The oscillations of the spin-resolved conductance become smoother and the control of the spin-FET characteristics becomes possible. For the calculations we employ a multi-channel scattering formalism, based on the R-matrix method extended to spin transport, in the presence of Rashba and Dresselhaus SO couplings.

Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

International Nuclear Information System (INIS)

Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

2014-01-01

A spintronic device, called the “strain assisted spin transfer torque (STT) random access memory (RAM),” is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

Voltage induced magnetostrictive switching of nanomagnets: Strain assisted strain transfer torque random access memory

Science.gov (United States)

Khan, Asif; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Ghani, Tahir; Young, Ian A.

2014-06-01

A spintronic device, called the "strain assisted spin transfer torque (STT) random access memory (RAM)," is proposed by combining the magnetostriction effect and the spin transfer torque effect which can result in a dramatic improvement in the energy dissipation relative to a conventional STT-RAM. Magnetization switching in the device which is a piezoelectric-ferromagnetic heterostructure via the combined magnetostriction and STT effect is simulated by solving the Landau-Lifshitz-Gilbert equation incorporating the influence of thermal noise. The simulations show that, in such a device, each of these two mechanisms (magnetostriction and spin transfer torque) provides in a 90° rotation of the magnetization leading a deterministic 180° switching with a critical current significantly smaller than that required for spin torque alone. Such a scheme is an attractive option for writing magnetic RAM cells.

Adiabatic shear bands as predictors of strain rate in high speed machining of ramax-2

International Nuclear Information System (INIS)

Zeb, M.A.; Irfan, M.A.; Velduis, A.C.

2008-01-01

Shear band formation was studied in the chips obtained by turning of stainless steel- Ramax-2 (AISI 420F). The machining was performed on a CNC lathe using a PVD (Physical Vapor Deposition) cutting tool insert. The cutting speeds ranged from 50 m/ min to 250 m/min. Dry cutting conditions were employed. At cutting speeds higher than 30 m/mill, the chip did not remain intact with the workpiece using quick stop device. It was difficult to get the chip root SEM (Scanning Electron Microscope) micrographs at further higher speeds. Therefore, the width of the shear bands was used as the predictor of the strain rates involved at various cutting speeds. The results showed that the strain rates are quite in agreement with the amount of strain rate found during machining of such types of stainless steels. It was also observed that shear band density increased with increasing cutting speed. (author)

Valley and spin thermoelectric transport in ferromagnetic silicene junctions

International Nuclear Information System (INIS)

Ping Niu, Zhi; Dong, Shihao

2014-01-01

We have investigated the valley and spin resolved thermoelectric transport in a normal/ferromagnetic/normal silicene junction. Due to the coupling between the valley and spin degrees of freedom, thermally induced pure valley and spin currents can be demonstrated. The magnitude and sign of these currents can be manipulated by adjusting the ferromagnetic exchange field and local external electric field, thus the currents are controllable. We also find fully valley and/or spin polarized currents. Similar to the currents, owing to the band structure symmetry, tunable pure spin and/or valley thermopowers with zero charge counterpart are generated. The results obtained here suggest a feasible way of generating a pure valley (spin) current and thermopower in silicene

Proximity effect in semiconductor films with spin-splitting and spin-orbit interaction

Energy Technology Data Exchange (ETDEWEB)

Michelsen, Jens; Grein, Roland [Institut fuer Theoretische Festkoerperphysik, Karlsruhe Institute of Technology, 76128 Karlsruhe (Germany)

2012-07-01

Superconducting heterostructures with spin-active materials have emerged as promising platforms for engineering topological superconductors featuring Majorana bound states at surfaces, edges and vortices. Here we present a method for evaluating, from a microscopic model, the band structure of a semiconductor film of finite thickness deposited on top of a conventional superconductor. Analytical expressions for the proximity induced gap openings are presented in terms of microscopic parameters and the proximity effect in presence of spin-orbit and exchange splitting is visualized in terms of Andreev reflection processes. An expression for the topological invariant, associated with the existence of Majorana bound states, is shown to depend only on parameters of the semiconductor film. The finite thickness of the film leads to resonant states in the film giving rise to a complex band structure with the topological phase alternating between trivial and non-trivial as the parameters are tuned of the film are tuned.

Spin polarization and magnetization of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states

International Nuclear Information System (INIS)

Simserides, Constantinos

2005-01-01

We study the magnetization, M, and the spin polarization, ζ, of n-doped non-magnetic-semiconductor (NMS)/narrow to wide dilute-magnetic-semiconductor (DMS)/n-doped NMS quantum wells, as a function of the temperature, T, and the in-plane magnetic field, B. Under such conditions the density of states (DOS) deviates from the occasionally stereotypic step-like form, both quantitatively and qualitatively. The DOS modification causes an impressive fluctuation of M in cases of vigorous competition between spatial and magnetic confinement. At low T, the enhanced electron spin-splitting, U oσ , acquires its bigger value. At higher T, U oσ decreases, augmenting the influence of the spin-up electrons. Increasing B, U oσ increases and accordingly electrons populate spin-down subbands while they abandon spin-up subbands. Furthermore, due to the DOS modification, all energetically higher subbands become gradually depopulated

Low-spin identical bands in neighboring odd-A and even-even nuclei

International Nuclear Information System (INIS)

Baktash, C.; Winchell, D.F.; Garrett, J.D.; Smith, A.

1992-01-01

A comprehensive study of odd-A rotational bands in normally deformed rare-earth nuclei indicates that a large number of seniority-one configurations (21% for odd-Z nuclei) at low spin have moments of inertia nearly identical to that of the seniority-zero configuration of the neighboring even-even nucleus with one less nucleon. It is difficult to reconcile these results with conventional models of nuclear pair correlation, which predict variations of about 15% in the moments of inertia of configurations differing by one unit in seniority

Optically induced dynamic nuclear spin polarisation in diamond

International Nuclear Information System (INIS)

Scheuer, Jochen; Naydenov, Boris; Jelezko, Fedor; Schwartz, Ilai; Chen, Qiong; Plenio, Martin B; Schulze-Sünninghausen, David; Luy, Burkhard; Carl, Patrick; Höfer, Peter; Retzker, Alexander; Sumiya, Hitoshi; Isoya, Junichi

2016-01-01

The sensitivity of magnetic resonance imaging (MRI) depends strongly on nuclear spin polarisation and, motivated by this observation, dynamical nuclear spin polarisation has recently been applied to enhance MRI protocols (Kurhanewicz et al 2011 Neoplasia 13 81). Nuclear spins associated with the 13 C carbon isotope (nuclear spin I = 1/2) in diamond possess uniquely long spin lattice relaxation times (Reynhardt and High 2011 Prog. Nucl. Magn. Reson. Spectrosc. 38 37). If they are present in diamond nanocrystals, especially when strongly polarised, they form a promising contrast agent for MRI. Current schemes for achieving nuclear polarisation, however, require cryogenic temperatures. Here we demonstrate an efficient scheme that realises optically induced 13 C nuclear spin hyperpolarisation in diamond at room temperature and low ambient magnetic field. Optical pumping of a nitrogen-vacancy centre creates a continuously renewable electron spin polarisation which can be transferred to surrounding 13 C nuclear spins. Importantly for future applications we also realise polarisation protocols that are robust against an unknown misalignment between magnetic field and crystal axis. (paper)

Two-photon spin generation and detection

International Nuclear Information System (INIS)

Miah, M Idrish

2009-01-01

A time- and polarization-resolved two-photon pump-probe investigation is performed in lightly doped GaAs. We generate spin-polarized electrons in bulk GaAs at various temperatures using right-circularly polarized two-photon excitation and detect them by probing the spin-dependent transmission of the sample. The spin polarization (P) of conduction band electrons, as measured using probe pulses with the same (right) and opposite (left) circular polarization, is measured in dependences of pump-probe delay (Δt), lattice temperature (T L ), doping density (n) as well as of the excess photon energy ΔE 2ω = ℎ2ω - E g , where E g is the band gap energy. P is found to be decayed with Δt and enhanced with the decrease in T L or the increase in n. It is also found that P decreases with the increase in ΔE 2ω and depolarizes rapidly for ΔE 2ω > ΔE SO , where ΔE SO is the spin-orbit splitting energy. The results demonstrate that due to a much longer absorption depth highly polarized spins can be generated optically by two-photon pumping of bulk semiconductors.

Inhomogeneous nuclear spin polarization induced by helicity-modulated optical excitation of fluorine-bound electron spins in ZnSe

Science.gov (United States)

Heisterkamp, F.; Greilich, A.; Zhukov, E. A.; Kirstein, E.; Kazimierczuk, T.; Korenev, V. L.; Yugova, I. A.; Yakovlev, D. R.; Pawlis, A.; Bayer, M.

2015-12-01

Optically induced nuclear spin polarization in a fluorine-doped ZnSe epilayer is studied by time-resolved Kerr rotation using resonant excitation of donor-bound excitons. Excitation with helicity-modulated laser pulses results in a transverse nuclear spin polarization, which is detected as a change of the Larmor precession frequency of the donor-bound electron spins. The frequency shift in dependence on the transverse magnetic field exhibits a pronounced dispersion-like shape with resonances at the fields of nuclear magnetic resonance of the constituent zinc and selenium isotopes. It is studied as a function of external parameters, particularly of constant and radio frequency external magnetic fields. The width of the resonance and its shape indicate a strong spatial inhomogeneity of the nuclear spin polarization in the vicinity of a fluorine donor. A mechanism of optically induced nuclear spin polarization is suggested based on the concept of resonant nuclear spin cooling driven by the inhomogeneous Knight field of the donor-bound electron.

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

International Nuclear Information System (INIS)

Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

2013-01-01

Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

Topological induced valley polarization in bilayer graphene/Boron Nitride

Science.gov (United States)

Basile, Leonardo; Idrobo, Juan C.

2015-03-01

Novel electronic devices relay in our ability to control internal quantum degrees of freedom of the electron e.g., its spin. The valley number degree of freedom is a pseudospin that labels degenerate eigenstates at local maximum/minimum on the valence/conduction band. Valley polarization, that is, selective electronic localization in a momentum valley and its manipulation can be achieved by means of circular polarized light (CPL) in a system with strong spin-orbit coupling (SOC). In this talk, we will show theoretically that despite the fact that neither graphene or BN have a strong SOC, a bilayer of graphene on BN oriented at a twist angle has different absorption for right- and left- CPL. This induced polarization occurs due to band folding of the electronic bands, i.e., it has a topological origin. This research was supported EPN multidisciplinary grant and by DOE SUFD MSED.

Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

Science.gov (United States)

Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

2016-07-01

A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3 these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

Unconventional strain-dependent conductance oscillations in pristine phosphorene.

Science.gov (United States)

Ray, S J; Kamalakar, M Venkata

2018-05-16

Phosphorene is a single elemental, two-dimensional semiconductor that has quickly emerged as a high mobility material for transistors and optoelectronic devices. In addition, being a 2D material it can sustain high levels of strain, enabling sensitive modification of its electronic properties. In this paper, we investigate the strain dependent electronic properties of phosphorene nanocrystals. By performing extensive calculations we determine the electrical conductance as a function of uniaxial, as well as biaxial strain stimuli and uncover a unique zone phase diagram. This enables us to uncover conductance oscillations in pristine phosphorene for the first time, by the simple application of strain. We show that such unconventional current-voltage behaviour is tuneable by the nature of strain, and that an additional gate voltage can modulate the amplitude (peak to valley ratio) of the observed phenomena and its switching efficiency. Furthermore, we show that the switching is highly robust against doping and defects. Our detailed results present new leads for innovation in strain based gauging and high-frequency nanoelectronic switches of phosphorene.

Dynamic behaviour and shock-induced martensite transformation in near-beta Ti-5553 alloy under high strain rate loading

Directory of Open Access Journals (Sweden)

Wang Lin

2015-01-01

Full Text Available Ti-5553 alloy is a near-beta titanium alloy with high strength and high fracture toughness. In this paper, the dynamic behaviour and shock-induced martensite phase transformation of Ti-5553 alloy with alpha/beta phases were investigated. Split Hopkinson Pressure Bar was employed to investigate the dynamic properties. Microstructure evolutions were characterized by Scanning Electronic Microscopy and Transmission Electron Microscope. The experimental results have demonstrated that Ti-5553 alloy with alpha/beta phases exhibits various strain rate hardening effects, both failure through adiabatic shear band. Ti-5553 alloy with Widmannstatten microstructure exhibit more obvious strain rate hardening effect, lower critical strain rate for ASB nucleation, compared with the alloy with Bimodal microstructures. Under dynamic compression, shock-induced beta to alpha” martensite transformation occurs.

Magneto-induced tunability of thermo-spin current in deformed zigzag graphene nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Adinehloo, Davoud, E-mail: davood-adineloo@ut.ac.ir; Fathipour, Morteza [School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515 (Iran, Islamic Republic of)

2015-12-21

The aim of this report is to unfold how the thermo-electric spin-polarized current in a transverse-biased zigzag graphene nanoribbon changes in the presence of uniaxial deformations and uniform perpendicular magnetic field. Employing the two-parameter Hubbard model along with the non-equilibrium Green's function formalism, we found that both uniaxial strain and magnetic field can significantly modulate the bandgap, local distribution of edge states, and the critical transverse electric field needed to achieve the half-metallic phase in the ribbon. Our analysis shows a significant enhancement of the maximum attainable spin-polarized current as functions of both source temperature and contacts temperature difference, with increasing the magnetic field or applying any magnitude of compressive strain. Furthermore, it is shown that the magneto-resistance ratio of the device, can be drastically tuned via strain engineering, reaching values as high as 2 × 10{sup 4}% for compressive strains of 5% magnitude.

Current induced multi-mode propagating spin waves in a spin transfer torque nano-contact with strong perpendicular magnetic anisotropy

Science.gov (United States)

Mohseni, S. Morteza; Yazdi, H. F.; Hamdi, M.; Brächer, T.; Mohseni, S. Majid

2018-03-01

Current induced spin wave excitations in spin transfer torque nano-contacts are known as a promising way to generate exchange-dominated spin waves at the nano-scale. It has been shown that when these systems are magnetized in the film plane, broken spatial symmetry of the field around the nano-contact induced by the Oersted field opens the possibility for spin wave mode co-existence including a non-linear self-localized spin-wave bullet and a propagating mode. By means of micromagnetic simulations, here we show that in systems with strong perpendicular magnetic anisotropy (PMA) in the free layer, two propagating spin wave modes with different frequency and spatial distribution can be excited simultaneously. Our results indicate that in-plane magnetized spin transfer nano-contacts in PMA materials do not host a solitonic self-localized spin-wave bullet, which is different from previous studies for systems with in plane magnetic anisotropy. This feature renders them interesting for nano-scale magnonic waveguides and crystals since magnon transport can be configured by tuning the applied current.

Stretchable Spin Valve with Stable Magnetic Field Sensitivity by Ribbon-Patterned Periodic Wrinkles.

Science.gov (United States)

Li, Huihui; Zhan, Qingfeng; Liu, Yiwei; Liu, Luping; Yang, Huali; Zuo, Zhenghu; Shang, Tian; Wang, Baomin; Li, Run-Wei

2016-04-26

A strain-relief structure by combining the strain-engineered periodic wrinkles and the parallel ribbons was employed to fabricate flexible dual spin valves onto PDMS substrates in a direct sputtering method. The strain-relief structure can accommodate the biaxial strain accompanying with stretching operation (the uniaxial applied tensile strain and the induced transverse compressive strain due to the Poisson effect), thus significantly reducing the influence of the residual strain on the giant magnetoresistance (GMR) performance. The fabricated GMR dual spin-valve sensor exhibits the nearly unchanged MR ratio of 9.9%, magnetic field sensitivity up to 0.69%/Oe, and zero-field resistance in a wide range of stretching strain, making it promising for applications on a conformal shape or a movement part.

Quantum spin Hall insulator BiXH (XH = OH, SH) monolayers with a large bulk band gap.

Science.gov (United States)

Hu, Xing-Kai; Lyu, Ji-Kai; Zhang, Chang-Wen; Wang, Pei-Ji; Ji, Wei-Xiao; Li, Ping

2018-05-16

A large bulk band gap is critical for the application of two-dimensional topological insulators (TIs) in spintronic devices operating at room temperature. On the basis of first-principles calculations, we predict BiXH (X = OH, SH) monolayers as TIs with an extraordinarily large bulk gap of 820 meV for BiOH and 850 meV for BiSH, and propose a tight-binding model considering spin-orbit coupling to describe the electronic properties of BiXH. These large gaps are entirely due to the strong spin-orbit interaction related to the pxy orbitals of the Bi atoms of the honeycomb lattice. The orbital filtering mechanism can be used to understand the topological properties of BiXH. The XH groups simply remove one branch of orbitals (pz of Bi) and reduce the trivial 6-band lattice into a 4-band, which is topologically non-trivial. The topological characteristics of BiXH monolayers are confirmed by nonzero topological invariant Z2 and a single pair of gapless helical edge states in the bulk gap. Owing to these features, the BiXH monolayers of the large-gap TIs are an ideal platform to realize many exotic phenomena and fabricate new quantum devices working at room temperature.

Investigating spin-transfer torques induced by thermal gradients in magnetic tunnel junctions by using micro-cavity ferromagnetic resonance

Science.gov (United States)

Cansever, H.; Narkowicz, R.; Lenz, K.; Fowley, C.; Ramasubramanian, L.; Yildirim, O.; Niesen, A.; Huebner, T.; Reiss, G.; Lindner, J.; Fassbender, J.; Deac, A. M.

2018-06-01

Similar to electrical currents flowing through magnetic multilayers, thermal gradients applied across the barrier of a magnetic tunnel junction may induce pure spin-currents and generate ‘thermal’ spin-transfer torques large enough to induce magnetization dynamics in the free layer. In this study, we describe a novel experimental approach to observe spin-transfer torques induced by thermal gradients in magnetic multilayers by studying their ferromagnetic resonance response in microwave cavities. Utilizing this approach allows for measuring the magnetization dynamics on micron/nano-sized samples in open-circuit conditions, i.e. without the need of electrical contacts. We performed first experiments on magnetic tunnel junctions patterned into 6  ×  9 µm2 ellipses from Co2FeAl/MgO/CoFeB stacks. We conducted microresonator ferromagnetic resonance (FMR) under focused laser illumination to induce thermal gradients in the layer stack and compared them to measurements in which the sample was globally heated from the backside of the substrate. Moreover, we carried out broadband FMR measurements under global heating conditions on the same extended films the microstructures were later on prepared from. The results clearly demonstrate the effect of thermal spin-torque on the FMR response and thus show that the microresonator approach is well suited to investigate thermal spin-transfer-driven processes for small temperatures gradients, far below the gradients required for magnetic switching.

Low-spin identical bands in neighboring odd-A and even-even nuclei

International Nuclear Information System (INIS)

Baktash, C.; Winchell, D.F.; Garrett, J.D.; Smith, A.

1993-01-01

A comprehensive study of odd-A rotational bands in normally deformed rare-earth nuclei indicates that a large number of seniority-one configurations (21 % for odd-Z nuclei) at low spin have moments of inertia nearly identical to that of the seniority-zero configuration of the neighboring even-even nucleus with one less nucleon. It is difficult to reconcile these results with conventional models of nuclear pair correlation, which predict variations of about 15% in the moments of inertia of configurations differing by one unit in seniority. (orig.)

Spin Heat Accumulation Induced by Tunneling from a Ferromagnet

NARCIS (Netherlands)

Vera-Marun, I.J.; Wees, B.J. van; Jansen, R.

2014-01-01

An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the

Valence band structure and density of states effective mass model of biaxial tensile strained silicon based on k · p theory

International Nuclear Information System (INIS)

Kuang Qian-Wei; Liu Hong-Xia; Wang Shu-Long; Qin Shan-Shan; Wang Zhi-Lin

2011-01-01

After constructing a stress and strain model, the valence bands of in-plane biaxial tensile strained Si is calculated by k · p method. In the paper we calculate the accurate anisotropy valance bands and the splitting energy between light and heavy hole bands. The results show that the valance bands are highly distorted, and the anisotropy is more obvious. To obtain the density of states (DOS) effective mass, which is a very important parameter for device modeling, a DOS effective mass model of biaxial tensile strained Si is constructed based on the valance band calculation. This model can be directly used in the device model of metal—oxide semiconductor field effect transistor (MOSFET). It also a provides valuable reference for biaxial tensile strained silicon MOSFET design. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Spin, quadrupole moment, and deformation of the magnetic-rotational band head in Pb193

Science.gov (United States)

Balabanski, D. L.; Ionescu-Bujor, M.; Iordachescu, A.; Bazzacco, D.; Brandolini, F.; Bucurescu, D.; Chmel, S.; Danchev, M.; de Poli, M.; Georgiev, G.; Haas, H.; Hübel, H.; Marginean, N.; Menegazzo, R.; Neyens, G.; Pavan, P.; Rossi Alvarez, C.; Ur, C. A.; Vyvey, K.; Frauendorf, S.

2011-01-01

The spectroscopic quadrupole moment of the T1/2=9.4(5) ns isomer in Pb193 at an excitation energy Eex=(2585+x) keV is measured by the time-differential perturbed angular distribution method as |Qs|=2.6(3) e b. Spin and parity Iπ=27/2- are assigned to it based on angular distribution measurements. This state is the band head of a magnetic-rotational band, described by the 1i13/2 subshell with the (3s1/2-21h9/21i13/2)11- proton excitation. The pairing-plus-quadrupole tilted-axis cranking calculations reproduce the measured quadrupole moment with a moderate oblate deformation ɛ2=-0.11, similar to that of the 11-proton intruder states, which nuclei in the region. This is the first direct measurement of a quadrupole moment and thus of the deformation of a magnetic-rotational band head.

Sciatic Nerve Conductivity is Impaired by Hamstring Strain Injuries.

Science.gov (United States)

Kouzaki, Karina; Nakazato, Koichi; Mizuno, Masuhiko; Yonechi, Tooru; Higo, Yusuke; Kubo, Yoshiaki; Kono, Tokuyoshi; Hiranuma, Kenji

2017-10-01

The aim of this study was to assess sciatic nerve conductivity in athletes with a history of hamstring strain injuries. Twenty-seven athletes with a history of hamstring strain injuries were included in the injured group. The control group consisted of 16 uninjured participants. We measured the proximal and distal latencies and calculated the sciatic nerve conduction velocity to evaluate neuronal conductivity. The results were expressed as median values and interquartile ranges. Both proximal latency and distal latency of the injured limb in the injured group were significantly longer than those of the uninjured limb (phamstring strain injuries. © Georg Thieme Verlag KG Stuttgart · New York.

Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions

KAUST Repository

Zhang, Chendong

2018-01-12

Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions

KAUST Repository

Zhang, Chendong; Li, Ming-yang; Tersoff, Jerry; Han, Yimo; Su, Yushan; Li, Lain-Jong; Muller, David A.; Shih, Chih-Kang

2018-01-01

Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.

Emergence of Dirac and quantum spin Hall states in fluorinated monolayer As and AsSb

KAUST Repository

Zhang, Qingyun

2016-01-21

Using first-principles calculations, we investigate the electronic and vibrational properties of monolayer As and AsSb. While the pristine monolayers are semiconductors (direct band gap at the Γ point), fluorination results in Dirac cones at the K points. Fluorinated monolayer As shows a band gap of 0.16 eV due to spin-orbit coupling, and fluorinated monolayer AsSb a larger band gap of 0.37 eV due to inversion symmetry breaking. Spin-orbit coupling induces spin splitting similar to monolayer MoS2. Phonon calculations confirm that both materials are dynamically stable. Calculations of the edge states of nanoribbons by the tight-binding method demonstrate that fluorinated monolayer As is topologically nontrivial in contrast to fluorinated monolayer AsSb.

Shear banding in large strain plasticity - Influence of specimen dimensions

Science.gov (United States)

Mucha, Marzena; Wcisło, Balbina; Pamin, Jerzy

2018-01-01

The paper deals with numerical analysis of shear banding which occurs in an elongated rectangular plate for a large strain elastic-plastic material model. It is focused on the influence of plate size proportions and finite element mesh density on numerical results. The discussion is limited to isothermal conditions and ideal plasticity. First a plain strain case is computed for different lengths of the plate, then simulations are repeated for plane stress for which different thicknesses of the plate are considered. Most of the computations are performed for three finite element meshes to verify discretization sensitivity of the results. The simulations are performed using AceGen and AceFEM packages for Wolfram Mathematica.

Integer Quantum Magnon Hall Plateau-Plateau Transition in a Spin Ice Model

OpenAIRE

Xu, Baolong; Ohtsuki, Tomi; Shindou, Ryuichi

2016-01-01

Low-energy magnon bands in a two-dimensional spin ice model become integer quantum magnon Hall bands. By calculating the localization length and the two-terminal conductance of magnon transport, we show that the magnon bands with disorders undergo a quantum phase transition from an integer quantum magnon Hall regime to a conventional magnon localized regime. Finite size scaling analysis as well as a critical conductance distribution shows that the quantum critical point belongs to the same un...

Current-induced spin transfer torque in ferromagnet-marginal Fermi liquid double tunnel junctions

International Nuclear Information System (INIS)

Mu Haifeng; Zheng Qingrong; Jin Biao; Su Gang

2005-01-01

Current-induced spin transfer torque through a marginal Fermi liquid (MFL) which is connected to two noncollinearly aligned ferromagnets via tunnel junctions is discussed in terms of the nonequilibrium Green function method. It is found that in the absence of the spin-flip scattering, the magnitude of the torque increases with the polarization and the coupling constant λ of the MFL, whose maximum increases with λ linearly, showing that the interactions between electrons tend to enhance the spin torque. When the spin-flip scattering is included, an additional spin torque is induced. It is found that the spin-flip scattering enhances the spin torque and gives rise to a nonlinear angular shift

Quasiparticle and optical properties of strained stanene and stanane.

Science.gov (United States)

Lu, Pengfei; Wu, Liyuan; Yang, Chuanghua; Liang, Dan; Quhe, Ruge; Guan, Pengfei; Wang, Shumin

2017-06-20

Quasiparticle band structures and optical properties of two dimensional stanene and stanane (fully hydrogenated stanene) are studied by the GW and GW plus Bethe-Salpeter equation (GW-BSE) approaches, with inclusion of the spin-orbit coupling (SOC). The SOC effect is significant for the electronic and optical properties in both stanene and stanane, compared with their group IV-enes and IV-anes counterparts. Stanene is a semiconductor with a quasiparticle band gap of 0.10 eV. Stanane has a sizable band gap of 1.63 eV and strongly binding exciton with binding energy of 0.10 eV. Under strain, the quasiparticle band gap and optical spectrum of both stanene and stanane are tunable.

Multiple band structure in 156Er

International Nuclear Information System (INIS)

Sunyar, A.W.; Der Mateosian, E.; Kistner, O.C.; Johnson, A.; Lumpkin, A.H.; Thieberger, P.

1976-01-01

The 142 Nd( 18 O,4n) 156 Er reaction at 90-95 MeV was used to study 156 Er high-spin states to spin 24. In addition to the background ground-state band, two well developed off-spin side bands, one of each parity, were observed. (Auth.)

Optically Polarized Conduction-Band Electrons in Tungsten Observed by Spin-Polarized Photoemission

DEFF Research Database (Denmark)

Zürcher, P.; Meier, F.; Christensen, N. E.

1979-01-01

Along the (100) direction of tungsten, interband transitions induced by circularly polarized light of energy 1.5 eV......Along the (100) direction of tungsten, interband transitions induced by circularly polarized light of energy 1.5 eV...

Quantum Point Contacts as Spin Injectors and Detectors for Studying Rasha Spin Precession in Semiconductor Quantum Wires

Science.gov (United States)

Debray, Philippe; Shorubalko, Ivan; Xu, Hongqi

2007-03-01

We have studied polarized spin transport in a device consisting of three quantum point contacts (QPCs) in series made on InGaAs/InP quantum-well (QW) structures. The QPCs were created by independent pairs of side gates, each pair for one QPC. By adjusting the bias voltages of the side gates, the widths of the QPCs are independently tuned to have transport in the fundamental mode. An external magnetic field of a few T causes spin splitting of the lowest one-dimensional (1D) subbands. The widths of the end QPCs are adjusted to position the Fermi level in the spin-split energy gap, while that of the central QPC is kept wide enough to populate both spin-split bands. Measurement of the conductance of the end QPCs at low temperatures (spinFET.

Enhanced Spin-Orbit Torque via Modulation of Spin Current Absorption

KAUST Repository

Qiu, Xuepeng

2016-11-18

The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin current absorbed in the FM. We exploit the large spin absorption at the Ru interface to manipulate the SOTs in HM/FM/Ru multilayers. While the FM thickness is smaller than its spin dephasing length of 1.2 nm, the top Ru layer largely boosts the absorption of spin currents into the FM layer and substantially enhances the strength of SOT acting on the FM. Spin-pumping experiments induced by ferromagnetic resonance support our conclusions that the observed increase in the SOT efficiency can be attributed to an enhancement of the spin-current absorption. A theoretical model that considers both reflected and transmitted mixing conductances at the two interfaces of FM is developed to explain the results.

Quantitative analysis on electric dipole energy in Rashba band splitting.

Science.gov (United States)

Hong, Jisook; Rhim, Jun-Won; Kim, Changyoung; Ryong Park, Seung; Hoon Shim, Ji

2015-09-01

We report on quantitative comparison between the electric dipole energy and the Rashba band splitting in model systems of Bi and Sb triangular monolayers under a perpendicular electric field. We used both first-principles and tight binding calculations on p-orbitals with spin-orbit coupling. First-principles calculation shows Rashba band splitting in both systems. It also shows asymmetric charge distributions in the Rashba split bands which are induced by the orbital angular momentum. We calculated the electric dipole energies from coupling of the asymmetric charge distribution and external electric field, and compared it to the Rashba splitting. Remarkably, the total split energy is found to come mostly from the difference in the electric dipole energy for both Bi and Sb systems. A perturbative approach for long wave length limit starting from tight binding calculation also supports that the Rashba band splitting originates mostly from the electric dipole energy difference in the strong atomic spin-orbit coupling regime.

Parametric analysis of plastic strain and force distribution in single pass metal spinning

International Nuclear Information System (INIS)

Choudhary, Shashank; Tejesh, Chiruvolu Mohan; Regalla, Srinivasa Prakash; Suresh, Kurra

2013-01-01

Metal spinning also known as spin forming is one of the sheet metal working processes by which an axis-symmetric part can be formed from a flat sheet metal blank. Parts are produced by pressing a blunt edged tool or roller on to the blank which in turn is mounted on a rotating mandrel. This paper discusses about the setting up a 3-D finite element simulation of single pass metal spinning in LS-Dyna. Four parameters were considered namely blank thickness, roller nose radius, feed ratio and mandrel speed and the variation in forces and plastic strain were analysed using the full-factorial design of experiments (DOE) method of simulation experiments. For some of these DOE runs, physical experiments on extra deep drawing (EDD) sheet metal were carried out using En31 tool on a lathe machine. Simulation results are able to predict the zone of unsafe thinning in the sheet and high forming forces that are hint to the necessity for less-expensive and semi-automated machine tools to help the household and small scale spinning workers widely prevalent in India

Parametric analysis of plastic strain and force distribution in single pass metal spinning

Science.gov (United States)

Choudhary, Shashank; Tejesh, Chiruvolu Mohan; Regalla, Srinivasa Prakash; Suresh, Kurra

2013-12-01

Metal spinning also known as spin forming is one of the sheet metal working processes by which an axis-symmetric part can be formed from a flat sheet metal blank. Parts are produced by pressing a blunt edged tool or roller on to the blank which in turn is mounted on a rotating mandrel. This paper discusses about the setting up a 3-D finite element simulation of single pass metal spinning in LS-Dyna. Four parameters were considered namely blank thickness, roller nose radius, feed ratio and mandrel speed and the variation in forces and plastic strain were analysed using the full-factorial design of experiments (DOE) method of simulation experiments. For some of these DOE runs, physical experiments on extra deep drawing (EDD) sheet metal were carried out using En31 tool on a lathe machine. Simulation results are able to predict the zone of unsafe thinning in the sheet and high forming forces that are hint to the necessity for less-expensive and semi-automated machine tools to help the household and small scale spinning workers widely prevalent in India.

Parametric analysis of plastic strain and force distribution in single pass metal spinning

Energy Technology Data Exchange (ETDEWEB)

Choudhary, Shashank, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Tejesh, Chiruvolu Mohan, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Regalla, Srinivasa Prakash, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Suresh, Kurra, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in [Department of Mechanical Engineering, BITS-Pilani, Hyderabad Campus, Shamirpet, Hyderabad, 500078, Andhra Pradesh (India)

2013-12-16

Metal spinning also known as spin forming is one of the sheet metal working processes by which an axis-symmetric part can be formed from a flat sheet metal blank. Parts are produced by pressing a blunt edged tool or roller on to the blank which in turn is mounted on a rotating mandrel. This paper discusses about the setting up a 3-D finite element simulation of single pass metal spinning in LS-Dyna. Four parameters were considered namely blank thickness, roller nose radius, feed ratio and mandrel speed and the variation in forces and plastic strain were analysed using the full-factorial design of experiments (DOE) method of simulation experiments. For some of these DOE runs, physical experiments on extra deep drawing (EDD) sheet metal were carried out using En31 tool on a lathe machine. Simulation results are able to predict the zone of unsafe thinning in the sheet and high forming forces that are hint to the necessity for less-expensive and semi-automated machine tools to help the household and small scale spinning workers widely prevalent in India.

Two-photon spin generation and detection

Energy Technology Data Exchange (ETDEWEB)

Miah, M Idrish, E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

2009-02-21

A time- and polarization-resolved two-photon pump-probe investigation is performed in lightly doped GaAs. We generate spin-polarized electrons in bulk GaAs at various temperatures using right-circularly polarized two-photon excitation and detect them by probing the spin-dependent transmission of the sample. The spin polarization (P) of conduction band electrons, as measured using probe pulses with the same (right) and opposite (left) circular polarization, is measured in dependences of pump-probe delay ({Delta}t), lattice temperature (T{sub L}), doping density (n) as well as of the excess photon energy {Delta}E{sub 2{omega}}= {h_bar}2{omega} - E{sub g}, where E{sub g} is the band gap energy. P is found to be decayed with {Delta}t and enhanced with the decrease in T{sub L} or the increase in n. It is also found that P decreases with the increase in {Delta}E{sub 2{omega}}and depolarizes rapidly for {Delta}E{sub 2{omega}}> {Delta}E{sub SO}, where {Delta}E{sub SO} is the spin-orbit splitting energy. The results demonstrate that due to a much longer absorption depth highly polarized spins can be generated optically by two-photon pumping of bulk semiconductors.

Nonreciprocity of spin waves in magnonic crystals created by surface acoustic waves in structures with yttrium iron garnet

International Nuclear Information System (INIS)

Kryshtal, R.G.; Medved, A.V.

2015-01-01

Experimental results of investigations of nonreciprocity for surface magnetostatic spin waves (SMSW) in the magnonic crystal created by surface acoustic waves (SAW) in yttrium iron garnet films on a gallium gadolinium garnet substrate as without metallization and with aluminum films with different electrical conductivities (thicknesses) are presented. In structures without metallization, the frequency of magnonic gaps is dependent on mutual directions of propagation of the SAW and SMSW, showing nonreciprocal properties for SMSW in SAW – magnonic crystals even with the symmetrical dispersion characteristic. In metalized SAW – magnonic crystals the shift of the magnonic band gaps frequencies at the inversion of the biasing magnetic field was observed. The frequencies of magnonic band gaps as functions of SAW frequency are presented. Measured dependencies, showing the decrease of magnonic gaps frequency and the expansion of the magnonic band gap width with the decreasing of the metal film conductivity are given. Such nonreciprocal properties of the SAW – magnonic crystals are promising for signal processing in the GHz range. - Highlights: • Spin waves nonreciprocity in YIG magnonic crystals with SAW was studied. • SAW was shown to create nonreciprocity for spin waves in YIG–GGG even without metal. • Frequency and width of magnonic band gaps were measured versus metal conductivity. • Conductivity for practical use of spin waves in the structure YIG–metal was defined

Nonreciprocity of spin waves in magnonic crystals created by surface acoustic waves in structures with yttrium iron garnet

Energy Technology Data Exchange (ETDEWEB)

Kryshtal, R.G.; Medved, A.V., E-mail: avm@ms.ire.rssi.ru

2015-12-01

Experimental results of investigations of nonreciprocity for surface magnetostatic spin waves (SMSW) in the magnonic crystal created by surface acoustic waves (SAW) in yttrium iron garnet films on a gallium gadolinium garnet substrate as without metallization and with aluminum films with different electrical conductivities (thicknesses) are presented. In structures without metallization, the frequency of magnonic gaps is dependent on mutual directions of propagation of the SAW and SMSW, showing nonreciprocal properties for SMSW in SAW – magnonic crystals even with the symmetrical dispersion characteristic. In metalized SAW – magnonic crystals the shift of the magnonic band gaps frequencies at the inversion of the biasing magnetic field was observed. The frequencies of magnonic band gaps as functions of SAW frequency are presented. Measured dependencies, showing the decrease of magnonic gaps frequency and the expansion of the magnonic band gap width with the decreasing of the metal film conductivity are given. Such nonreciprocal properties of the SAW – magnonic crystals are promising for signal processing in the GHz range. - Highlights: • Spin waves nonreciprocity in YIG magnonic crystals with SAW was studied. • SAW was shown to create nonreciprocity for spin waves in YIG–GGG even without metal. • Frequency and width of magnonic band gaps were measured versus metal conductivity. • Conductivity for practical use of spin waves in the structure YIG–metal was defined.

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Energy Technology Data Exchange (ETDEWEB)

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

Science.gov (United States)

van't Erve, Olaf

2014-03-01

New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin

Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface

KAUST Repository

Upadhyay Kahaly, M.

2011-09-20

We study the epitaxial GaAs-AlAs interface of wide gap materials by full-potential density functional theory. AlAsthin films on a GaAs substrate and GaAsthin films on an AlAs substrate show different trends for the electronic band gap with increasing film thickness. In both cases, we find an insulating state at the interface and a negligible charge transfer even after relaxation. Differences in the valence and conduction band edges suggest that the energy band discontinuities depend on the growth sequence. Introduction of As vacancies near the interface induces metallicity, which opens great potential for GaAs-AlAs heterostructures in modern electronics.

Dynamical spin accumulation in large-spin magnetic molecules

Science.gov (United States)

Płomińska, Anna; Weymann, Ireneusz; Misiorny, Maciej

2018-01-01

The frequency-dependent transport through a nanodevice containing a large-spin magnetic molecule is studied theoretically in the Kondo regime. Specifically, the effect of magnetic anisotropy on dynamical spin accumulation is of primary interest. Such accumulation arises due to finite components of frequency-dependent conductance that are off diagonal in spin. Here, employing the Kubo formalism and the numerical renormalization group method, we demonstrate that the dynamical transport properties strongly depend on the relative orientation of spin moments in electrodes of the device, as well as on intrinsic parameters of the molecule. In particular, the effect of dynamical spin accumulation is found to be greatly affected by the type of magnetic anisotropy exhibited by the molecule, and it develops for frequencies corresponding to the Kondo temperature. For the parallel magnetic configuration of the device, the presence of dynamical spin accumulation is conditioned by the interplay of ferromagnetic-lead-induced exchange field and the Kondo correlations.

Microscopic origin of marginal Fermi-liquid in strongly correlated spin systems

International Nuclear Information System (INIS)

Protogenov, A.P.; Ryndyk, D.A.

1992-08-01

We consider the consequences of separation of spin and charge degrees of freedom in 2+1D strongly correlated spin systems. Self-consistent spin and charge motions induced by doping in sites of ground and dual lattices form such a spectrum of quasiparticles which together with the dispersionless character of the collective excitation spectrum and the chemical potential pinning in the band centre yield the necessary behavior of charge and spin polarizability to support the theory of marginal liquid formulated by C.M. Varma et al. (Phys. Rev. Lett. 63, 1996 (1989)). (author). 28 refs, 4 figs

Quantum spin Hall effect and topological phase transition in InN x Bi y Sb1-x-y /InSb quantum wells

Science.gov (United States)

Song, Zhigang; Bose, Sumanta; Fan, Weijun; Zhang, Dao Hua; Zhang, Yan Yang; Shen Li, Shu

2017-07-01

Quantum spin Hall (QSH) effect, a fundamentally new quantum state of matter and topological phase transitions are characteristics of a kind of electronic material, popularly referred to as topological insulators (TIs). TIs are similar to ordinary insulator in terms of their bulk bandgap, but have gapless conducting edge-states that are topologically protected. These edge-states are facilitated by the time-reversal symmetry and they are robust against nonmagnetic impurity scattering. Recently, the quest for new materials exhibiting non-trivial topological state of matter has been of great research interest, as TIs find applications in new electronics and spintronics and quantum-computing devices. Here, we propose and demonstrate as a proof-of-concept that QSH effect and topological phase transitions can be realized in {{InN}}x{{Bi}}y{{Sb}}1-x-y/InSb semiconductor quantum wells (QWs). The simultaneous incorporation of nitrogen and bismuth in InSb is instrumental in lowering the bandgap, while inducing opposite kinds of strain to attain a near-lattice-matching conducive for lattice growth. Phase diagram for bandgap shows that as we increase the QW thickness, at a critical thickness, the electronic bandstructure switches from a normal to an inverted type. We confirm that such transition are topological phase transitions between a traditional insulator and a TI exhibiting QSH effect—by demonstrating the topologically protected edge-states using the bandstructure, edge-localized distribution of the wavefunctions and edge-state spin-momentum locking phenomenon, presence of non-zero conductance in spite of the Fermi energy lying in the bandgap window, crossover points of Landau levels in the zero-mode indicating topological band inversion in the absence of any magnetic field and presence of large Rashba spin-splitting, which is essential for spin-manipulation in TIs.

Theory of current-induced spin polarization in an electron gas

Science.gov (United States)

Gorini, Cosimo; Maleki Sheikhabadi, Amin; Shen, Ka; Tokatly, Ilya V.; Vignale, Giovanni; Raimondi, Roberto

2017-05-01

We derive the Bloch equations for the spin dynamics of a two-dimensional electron gas in the presence of spin-orbit coupling. For the latter we consider both the intrinsic mechanisms of structure inversion asymmetry (Rashba) and bulk inversion asymmetry (Dresselhaus), and the extrinsic ones arising from the scattering from impurities. The derivation is based on the SU(2) gauge-field formulation of the Rashba-Dresselhaus spin-orbit coupling. Our main result is the identification of a spin-generation torque arising from Elliot-Yafet scattering, which opposes a similar term arising from Dyakonov-Perel relaxation. Such a torque, which to the best of our knowledge has gone unnoticed so far, is of basic nature, i.e., should be effective whenever Elliott-Yafet processes are present in a system with intrinsic spin-orbit coupling, irrespective of further specific details. The spin-generation torque contributes to the current-induced spin polarization (CISP), also known as inverse spin-galvanic or Edelstein effect. As a result, the behavior of the CISP turns out to be more complex than one would surmise from consideration of the internal Rashba-Dresselhaus fields alone. In particular, the symmetry of the current-induced spin polarization does not necessarily coincide with that of the internal Rashba-Dresselhaus field, and an out-of-plane component of the CISP is generally predicted, as observed in recent experiments. We also discuss the extension to the three-dimensional electron gas, which may be relevant for the interpretation of experiments in thin films.

Spin-resolved photoelectron spectroscopy using femtosecond extreme ultraviolet light pulses from high-order harmonic generation

Energy Technology Data Exchange (ETDEWEB)

Plötzing, M.; Adam, R., E-mail: r.adam@fz-juelich.de; Weier, C.; Plucinski, L.; Schneider, C. M. [Forschungszentrum Jülich GmbH, Peter Grünberg Institut (PGI-6), 52425 Jülich (Germany); Eich, S.; Emmerich, S.; Rollinger, M.; Aeschlimann, M. [University of Kaiserslautern and Research Center OPTIMAS, 67663 Kaiserslautern (Germany); Mathias, S. [Georg-August-Universität Göttingen, I. Physikalisches Institut, 37077 Göttingen (Germany)

2016-04-15

The fundamental mechanism responsible for optically induced magnetization dynamics in ferromagnetic thin films has been under intense debate since almost two decades. Currently, numerous competing theoretical models are in strong need for a decisive experimental confirmation such as monitoring the triggered changes in the spin-dependent band structure on ultrashort time scales. Our approach explores the possibility of observing femtosecond band structure dynamics by giving access to extended parts of the Brillouin zone in a simultaneously time-, energy- and spin-resolved photoemission experiment. For this purpose, our setup uses a state-of-the-art, highly efficient spin detector and ultrashort, extreme ultraviolet light pulses created by laser-based high-order harmonic generation. In this paper, we present the setup and first spin-resolved spectra obtained with our experiment within an acquisition time short enough to allow pump-probe studies. Further, we characterize the influence of the excitation with femtosecond extreme ultraviolet pulses by comparing the results with data acquired using a continuous wave light source with similar photon energy. In addition, changes in the spectra induced by vacuum space-charge effects due to both the extreme ultraviolet probe- and near-infrared pump-pulses are studied by analyzing the resulting spectral distortions. The combination of energy resolution and electron count rate achieved in our setup confirms its suitability for spin-resolved studies of the band structure on ultrashort time scales.

Conductance dips and spin precession in a nonuniform waveguide with spin–orbit coupling

Energy Technology Data Exchange (ETDEWEB)

Malyshev, A. I., E-mail: malyshev@phys.unn.ru; Kozulin, A. S. [Lobachevsky Nizhny Novgorod State University (Russian Federation)

2015-07-15

An infinite waveguide with a nonuniformity, a segment of finite length with spin–orbit coupling, is considered in the case when the Rashba and Dresselhaus parameters are identical. Analytical expressions have been derived in the single-mode approximation for the conductance of the system for an arbitrary initial spin state. Based on numerical calculations with several size quantization modes, we have detected and described the conductance dips arising when the waves are localized in the nonuniformity due to the formation of an effective potential well in it. We show that allowance for the evanescent modes under carrier spin precession in an effective magnetic field does not lead to a change in the direction of the average spin vector at the output of the system.

Landau Levels of Majorana Fermions in a Spin Liquid.

Science.gov (United States)

Rachel, Stephan; Fritz, Lars; Vojta, Matthias

2016-04-22

Majorana fermions, originally proposed as elementary particles acting as their own antiparticles, can be realized in condensed-matter systems as emergent quasiparticles, a situation often accompanied by topological order. Here we propose a physical system which realizes Landau levels-highly degenerate single-particle states usually resulting from an orbital magnetic field acting on charged particles-for Majorana fermions. This is achieved in a variant of a quantum spin system due to Kitaev which is distorted by triaxial strain. This strained Kitaev model displays a spin-liquid phase with charge-neutral Majorana-fermion excitations whose spectrum corresponds to that of Landau levels, here arising from a tailored pseudomagnetic field. We show that measuring the dynamic spin susceptibility reveals the Landau-level structure by a remarkable mechanism of probe-induced bound-state formation.

Spin torque on the surface of graphene in the presence of spin orbit splitting

Directory of Open Access Journals (Sweden)

Ji Chen

2013-06-01

Full Text Available We study theoretically the spin transfer torque of a ferromagnetic layer coupled to (deposited onto a graphene surface in the presence of the Rashba spin orbit coupling (RSOC. We show that the RSOC induces an effective magnetic field, which will result in the spin precession of conduction electrons. We derive correspondingly the generalized Landau-Lifshitz-Gilbert (LLG equation, which describes the precessional motion of local magnetization under the influence of the spin orbit effect. Our theoretical estimate indicates that the spin orbit spin torque may have significant effect on the magnetization dynamics of the ferromagnetic layer coupled to the graphene surface.

Observation of zone folding induced acoustic topological insulators and the role of spin-mixing defects

Science.gov (United States)

Deng, Yuanchen; Ge, Hao; Tian, Yuan; Lu, Minghui; Jing, Yun

2017-11-01

This article reports on the experimental realization of a flow-free, pseudospin-based acoustic topological insulator designed using the strategy of zone folding. Robust sound one-way propagation is demonstrated with the presence of non-spin-mixing defects. On the other hand, it is shown that spin-mixing defects, which break the geometric symmetry and therefore the pseudo-time-reversal symmetry, can open up nontrivial band gaps within the edge state frequency band, and their width can be tailored by the extent of the defect. This provides a possible route for realizing tunable acoustic topological insulators.

Change in optimum genetic algorithm solution with changing band discontinuities and band widths of electrically conducting copolymers

Science.gov (United States)

Kaur, Avneet; Bakhshi, A. K.

2010-04-01

The interest in copolymers stems from the fact that they present interesting electronic and optical properties leading to a variety of technological applications. In order to get a suitable copolymer for a specific application, genetic algorithm (GA) along with negative factor counting (NFC) method has recently been used. In this paper, we study the effect of change in the ratio of conduction band discontinuity to valence band discontinuity (Δ Ec/Δ Ev) on the optimum solution obtained from GA for model binary copolymers. The effect of varying bandwidths on the optimum GA solution is also investigated. The obtained results show that the optimum solution changes with varying parameters like band discontinuity and band width of constituent homopolymers. As the ratio Δ Ec/Δ Ev increases, band gap of optimum solution decreases. With increasing band widths of constituent homopolymers, the optimum solution tends to be dependent on the component with higher band gap.

Dynamical nuclear spin polarization induced by electronic current through double quantum dots

International Nuclear Information System (INIS)

Lopez-Monis, Carlos; Platero, Gloria; Inarrea, Jesus

2011-01-01

We analyse electron-spin relaxation in electronic transport through coherently coupled double quantum dots (DQDs) in the spin blockade regime. In particular, we focus on hyperfine (HF) interaction as the spin-relaxation mechanism. We pay special attention to the effect of the dynamical nuclear spin polarization induced by the electronic current on the nuclear environment. We discuss the behaviour of the electronic current and the induced nuclear spin polarization versus an external magnetic field for different HF coupling intensities and interdot tunnelling strengths. We take into account, for each magnetic field, all HF-mediated spin-relaxation processes coming from different opposite spin level approaches. We find that the current as a function of the external magnetic field shows a peak or a dip and that the transition from a current dip to a current peak behaviour is obtained by decreasing the HF coupling or by increasing the interdot tunnelling strength. We give a physical picture in terms of the interplay between the electrons tunnelling out of the DQD and the spin-flip processes due to the nuclear environment.

Strain and thermal conductivity in ultrathin suspended silicon nanowires

Science.gov (United States)

Fan, Daniel; Sigg, Hans; Spolenak, Ralph; Ekinci, Yasin

2017-09-01

We report on the uniaxial strain and thermal conductivity of well-ordered, suspended silicon nanowire arrays between 10 to 20 nm width and 22 nm half-pitch, fabricated by extreme-ultraviolet (UV) interference lithography. Laser-power-dependent Raman spectroscopy showed that nanowires connected monolithically to the bulk had a consistent strain of ˜0.1 % , whereas nanowires clamped by metal exhibited variability and high strain of up to 2.3%, having implications in strain engineering of nanowires. The thermal conductivity at room temperature was measured to be ˜1 W /m K for smooth nanowires and ˜0.1 W /m K for rougher ones, similar to results by other investigators. We found no modification of the bulk properties in terms of intrinsic scattering, and therefore, the decrease in thermal conductivity is mainly due to boundary scattering. Different types of surface roughness, such as constrictions and line-edge roughness, may play roles in the scattering of phonons of different wavelengths. Such low thermal conductivities would allow for very efficient thermal energy harvesting, approaching and passing values achieved by state-of-the-art thermoelectric materials.

Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

Science.gov (United States)

Luengo-Kovac, M.; Huang, S.; Del Gaudio, D.; Occena, J.; Goldman, R. S.; Raimondi, R.; Sih, V.

2017-11-01

The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1 -xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

Recharging processes, radiation induced strain and changes of OH - bands under H + ion implantation in Ti doped lithium niobate

Science.gov (United States)

Kumar, P.; Moorthy Babu, S.; Bhaumik, I.; Ganesamoorthy, S.; Karnal, A. K.; Kumar, Praveen; Rodrigues, G. O.; Sulania, I.; Kanjilal, D.; Pandey, A. K.; Raman, R.

2010-01-01

A systematic analysis of variations in structural and optical characteristics of Z-cut plates of titanium doped congruent lithium niobate single crystals implanted with 120 keV proton beam at various fluences of 10 15, 10 16 and 10 17 protons/cm 2 is presented. Through, high resolution X-ray diffraction, atomic force microscopy, Fourier transform infrared and UV-visible-NIR analysis of congruent lithium niobate, the correlation of properties before and after implantation are discussed. HRXRD (0 0 6) reflection by Triple Crystal Mode shows that both tensile and compressive strain peak are produced by the high fluence implantation. A distinct tensile peak was observed from implanted region for a fluence of 10 16 protons/cm 2. AFM micrographs indicate mountain ridges, bumps and protrusions on target surface on implantation. UV-visible-NIR spectra reveal an increase in charge transfer between Ti 3+/Ti 4+ and ligand oxygen for implantation with 10 15 protons/cm 2, while spectra for higher fluence implanted samples show complex absorption band in the region from 380-1100 nm. Variations of OH - stretching vibration mode were observed for cLN Pure, cLNT2% virgin, and implanted samples with FTIR spectra. The concentration of OH - ion before and after implantation was calculated from integral absorption intensity. The effect of 120 keV proton implantation induced structural, surface and optical studies were correlated.

Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field

International Nuclear Information System (INIS)

Miah, M. Idrish

2008-01-01

The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (V AH ) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of V AH on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that V AH depends on the doping density. The results are discussed

Donor-driven spin relaxation in multivalley semiconductors.

Science.gov (United States)

Song, Yang; Chalaev, Oleg; Dery, Hanan

2014-10-17

The observed dependence of spin relaxation on the identity of the donor atom in n-type silicon has remained without explanation for decades and poses a long-standing open question with important consequences for modern spintronics. Taking into account the multivalley nature of the conduction band in silicon and germanium, we show that the spin-flip amplitude is dominated by short-range scattering off the central-cell potential of impurities after which the electron is transferred to a valley on a different axis in k space. Through symmetry arguments, we show that this spin-flip process can strongly affect the spin relaxation in all multivalley materials in which time-reversal cannot connect distinct valleys. From the physical insights gained from the theory, we provide guidelines to significantly enhance the spin lifetime in semiconductor spintronics devices.

Fingerprints of transversal and longitudinal coupling between induced open quantum dots in the longitudinal magneto-conductance through anti-dot lattices

International Nuclear Information System (INIS)

Ujevic, Sebastian; Mendoza, Michel

2011-01-01

Full text. We propose numerical simulations of longitudinal magneto conductance through a finite anti dot lattice located inside an open quantum dot with a magnetic field applied perpendicular to the plane. The system is connected to reservoirs using quantum point contacts. We discuss the relationship between the longitudinal magneto conductance and the generation of transversal couplings between the induced open quantum dots in the system. The system presents longitudinal magneto conductance maps with crossovers (between transversal bands) and closings (longitudinal decoupling) of fundamental quantum states related to the open quantum dots induced by the anti dot lattice. A relationship is observed between the distribution of anti dots and the formed conductance bands, allowing a systematic follow-up of the bands as a function of the applied magnetic field and quantum point contact width. We observed a high conductance intensity (between n- and (n + 1)-quantum of conductance, n = 1; 2...) in the regions of crossover and closing of states. This suggests transversal couplings between the induced open quantum dots of the system that can be modulated by varying both the anti dots potential and the quantum point contact width. A new continuous channel (not expected) is induced by the variation of the contact width and generate Fano resonances in the conductance. These resonances can be manipulated by the applied magnetic field

Angiogenesis is induced by airway smooth muscle strain.

Science.gov (United States)

Hasaneen, Nadia A; Zucker, Stanley; Lin, Richard Z; Vaday, Gayle G; Panettieri, Reynold A; Foda, Hussein D

2007-10-01

Angiogenesis is an important feature of airway remodeling in both chronic asthma and chronic obstructive pulmonary disease (COPD). Airways in those conditions are exposed to excessive mechanical strain during periods of acute exacerbations. We recently reported that mechanical strain of human airway smooth muscle (HASM) led to an increase in their proliferation and migration. Sustained growth in airway smooth muscle in vivo requires an increase in the nutritional supply to these muscles, hence angiogenesis. In this study, we examined the hypothesis that cyclic mechanical strain of HASM produces factors promoting angiogenic events in the surrounding vascular endothelial cells. Our results show: 1) a significant increase in human lung microvascular endothelial cell (HMVEC-L) proliferation, migration, and tube formation following incubation in conditioned media (CM) from HASM cells exposed to mechanical strain; 2) mechanical strain of HASM cells induced VEGF expression and release; 3) VEGF neutralizing antibodies inhibited the proliferation, migration, and tube formations of HMVEC-L induced by the strained airway smooth muscle CM; 4) mechanical strain of HASM induced a significant increase in hypoxia-inducible factor-1alpha (HIF-1alpha) mRNA and protein, a transcription factor required for VEGF gene transcription; and 5) mechanical strain of HASM induced HIF-1alpha/VEGF through dual phosphatidylinositol 3-kinase (PI3K)/Akt/mammalian target of rapamycin (mTOR) and ERK pathways. In conclusion, exposing HASM cells to mechanical strain induces signal transduction pathway through PI3K/Akt/mTOR and ERK pathways that lead to an increase in HIF-1alpha, a transcription factor required for VEGF expression. VEGF release by mechanical strain of HASM may contribute to the angiogenesis seen with repeated exacerbation of asthma and COPD.

Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

International Nuclear Information System (INIS)

Miah, M. Idrish; Kityk, I.V.; Gray, E. MacA.

2007-01-01

The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage

Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au; Kityk, I.V. [Institute of Physics, J. Dlugosz University Czestochowa, PL-42201 Czestochowa (Poland); Gray, E. MacA. [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

2007-10-15

The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage.

Engineering the quantum anomalous Hall effect in graphene with uniaxial strains

Energy Technology Data Exchange (ETDEWEB)

Diniz, G. S., E-mail: ginetom@gmail.com; Guassi, M. R. [Institute of Physics, University of Brasília, 70919-970 Brasília-DF (Brazil); Qu, F. [Institute of Physics, University of Brasília, 70919-970 Brasília-DF (Brazil); Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

2013-12-28

We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase, which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarkably, as the strain strength is increased beyond approximately 7%, the critical parameters of the exchange field for triggering the quantum anomalous Hall phase transition show distinct behaviors—decrease (increase) for strains along zigzag (armchair) direction. Our findings open up a new platform for manipulation of the QAHE by an experimentally accessible strain deformation of the graphene structure, with promising application on novel quantum electronic devices with high efficiency.

Engineering the quantum anomalous Hall effect in graphene with uniaxial strains