WorldWideScience

Sample records for stacked metal lattices

  1. 3D Metallic Lattices for Accelerator Applications

    CERN Document Server

    Shapiro, Michael A; Sirigiri, Jagadishwar R; Temkin, Richard J

    2005-01-01

    We present the results of research on 3D metallic lattices operating at microwave frequencies for application in (1) accelerator structures with higher order mode suppression, (2) Smith-Purcell radiation beam diagnostics, and (3) polaritonic materials for laser acceleration. Electromagnetic waves in a 3D simple cubic lattice formed by metal wires are calculated using HFSS. The bulk modes in the lattice are determined using single cell calculations with different phase advances in all three directions. The Brillouin diagram for the bulk modes is presented and indicates the absence of band gaps in simple lattices except the band below the cutoff. Lattices with thin wires as well as with thick wires have been analyzed. The Brillouin diagram also indicates the presence of low frequency 3D plasmon mode as well as the two degenerate photon modes analogous to those in a 2D lattice. Surface modes for a semi-infinite cubic lattice are modeled as a stack of cells with different phase advances in the two directions alon...

  2. Topological chiral phonons in center-stacked bilayer triangle lattices

    Science.gov (United States)

    Xu, Xifang; Zhang, Wei; Wang, Jiaojiao; Zhang, Lifa

    2018-06-01

    Since chiral phonons were found in an asymmetric two-dimensional hexagonal lattice, there has been growing interest in the study of phonon chirality, which were experimentally verified very recently in monolayer tungsten diselenide (2018 Science 359 579). In this work, we find chiral phonons with nontrivial topology in center-stacked bilayer triangle lattices. At the Brillouin-zone corners, (), circularly polarized phonons and nonzero phonon Berry curvature are observed. Moreover, we find that the phonon chirality remain robust with changing sublattice mass ratio and interlayer coupling. The chiral phonons at the valleys are demonstrated in doubler-layer sodium chloride along the [1 1 1] direction. We believe that the findings on topological chiral phonons in triangle lattices will give guidance in the study of chiral phonons in real materials and promote the phononic applications.

  3. Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

    Science.gov (United States)

    Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

    2015-12-01

    This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of dielectric stack required for high performance MIM capacitor.

  4. Stacking faults and microstructural parameters in non-mulberry silk ...

    Indian Academy of Sciences (India)

    rameters like crystal size (〈N〉), lattice strain (g) and stacking faults in polymer materials ... metal oxide compounds, but may be inadequate for describing diffraction patterns .... Further, with these model parameters for individual Bragg reflec-.

  5. Comprehensive first-principles study of stable stacking faults in hcp metals

    International Nuclear Information System (INIS)

    Yin, Binglun; Wu, Zhaoxuan; Curtin, W.A.

    2017-01-01

    The plastic deformation in hcp metals is complex, with the associated dislocation core structures and properties not well understood on many slip planes in most hcp metals. A first step in establishing the dislocation properties is to examine the stable stacking fault energy and its structure on relevant slip planes. However, this has been perplexing in the hcp structure due to additional in-plane displacements on both sides of the slip plane. Here, density functional theory guided by crystal symmetry analysis is used to study all relevant stable stacking faults in 6 hcp metals (Mg, Ti, Zr, Re, Zn, Cd). Specially, the stable stacking fault energy, position, and structure on the Basal, Prism I and II, Pyramidal I and II planes are determined using all-periodic supercells with full atomic relaxation. All metals show similar stacking fault position and structure as dictated by crystal symmetry, but the associated stacking fault energy, being governed by the atomic bonding, differs significantly among them. Stacking faults on all the slip planes except the Basal plane show substantial out-of-plane displacements while stacking faults on the Prism II, Pyramidal I and II planes show additional in-plane displacements, all extending to multiple atom layers. The in-plane displacements are not captured in the standard computational approach for stacking faults, and significant differences are shown in the energies of such stacking faults between the standard approach and fully-relaxed case. The existence of well-defined stable stacking fault on the Pyramidal planes suggests zonal dislocations are unlikely. Calculations on the equilibrium partial separation further suggests 〈c + a〉 dissociation into three partials on the Pyramidal I plane is unlikely and 〈c〉 dissociation on Prism planes is unlikely to be stable against climb-dissociation onto the Basal planes in these metals.

  6. Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-03-09

    It is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.

  7. Two Topologically Distinct Dirac-Line Semimetal Phases and Topological Phase Transitions in Rhombohedrally Stacked Honeycomb Lattices

    Science.gov (United States)

    Hyart, T.; Ojajärvi, R.; Heikkilä, T. T.

    2018-04-01

    Three-dimensional topological semimetals can support band crossings along one-dimensional curves in the momentum space (nodal lines or Dirac lines) protected by structural symmetries and topology. We consider rhombohedrally (ABC) stacked honeycomb lattices supporting Dirac lines protected by time-reversal, inversion and spin rotation symmetries. For typical band structure parameters there exists a pair of nodal lines in the momentum space extending through the whole Brillouin zone in the stacking direction. We show that these Dirac lines are topologically distinct from the usual Dirac lines which form closed loops inside the Brillouin zone. In particular, an energy gap can be opened only by first merging the Dirac lines going through the Brillouin zone in a pairwise manner so that they turn into closed loops inside the Brillouin zone, and then by shrinking these loops into points. We show that this kind of topological phase transition can occur in rhombohedrally stacked honeycomb lattices by tuning the ratio of the tunneling amplitudes in the directions perpendicular and parallel to the layers. We also discuss the properties of the surface states in the different phases of the model.

  8. The lattice distortion around the divacancy in cubic metals using the method of lattice statics

    International Nuclear Information System (INIS)

    Yoshioki, S.

    1976-01-01

    The lattice distortion produced by a divacancy in FCC metals (Al, Cu, Ag and Au) and in BCC metals (Fe, Mo and V) has been calculated using the method of lattice statics. The model assumes non-equilibrium pairwise interactions extending out to second nearest neighbours. Roughly speaking, the relaxation volumes associated with the divacancy are twice the values for the isolated vacancy. (author)

  9. Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

    Science.gov (United States)

    Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

    2013-06-01

    In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

  10. Calculated stacking-fault energies of elemental metals

    DEFF Research Database (Denmark)

    Rosengaard, N. M.; Skriver, Hans Lomholt

    1993-01-01

    -sphere approximations. The results are in excellent agreement with recent layer Korringa-Kohn-Rostoker Green's-function calculations where stacking-fault energies for Ni, Cu, Rh, Pd, Ag, Ir, and Au were found by means of the the so-called force theorem. We find that the self-consistent fault energies for all the metals...

  11. Indirect Fabrication of Lattice Metals with Thin Sections Using Centrifugal Casting.

    Science.gov (United States)

    Mun, Jiwon; Ju, Jaehyung; Thurman, James

    2016-05-14

    One of the typical methods to manufacture 3D lattice metals is the direct-metal additive manufacturing (AM) process such as Selective Laser Melting (SLM) and Electron Beam Melting (EBM). In spite of its potential processing capability, the direct AM method has several disadvantages such as high cost, poor surface finish of final products, limitation in material selection, high thermal stress, and anisotropic properties of parts. We propose a cost-effective method to manufacture 3D lattice metals. The objective of this study is to provide a detailed protocol on fabrication of 3D lattice metals having a complex shape and a thin wall thickness; e.g., octet truss made of Al and Cu alloys having a unit cell length of 5 mm and a cell wall thickness of 0.5 mm. An overall experimental procedure is divided into eight sections: (a) 3D printing of sacrificial patterns (b) melt-out of support materials (c) removal of residue of support materials (d) pattern assembly (e) investment (f) burn-out of sacrificial patterns (g) centrifugal casting (h) post-processing for final products. The suggested indirect AM technique provides the potential to manufacture ultra-lightweight lattice metals; e.g., lattice structures with Al alloys. It appears that the process parameters should be properly controlled depending on materials and lattice geometry, observing the final products of octet truss metals by the indirect AM technique.

  12. Size and shape dependent lattice parameters of metallic nanoparticles

    International Nuclear Information System (INIS)

    Qi, W. H.; Wang, M. P.

    2005-01-01

    A model is developed to account for the size and shape dependent lattice parameters of metallic nanoparticles, where the particle shape difference is considered by introducing a shape factor. It is predicted that the lattice parameters of nanoparticles in several nanometers decrease with decreasing of the particle size, which is consistent with the corresponding experimental results. Furthermore, it is found that the particle shape can lead to 10% of the total lattice variation. The model is a continuous media model and can deal with the nanoparticles larger than 1 nm. Since the shape factor approaches to infinity for nanowires and nanofilms, therefore, the model cannot be generalized to the systems of nanowires and nanofilms. For the input parameters are physical constants of bulk materials, therefore, the present model may be used to predict the lattice variation of different metallic nanoparticles with different lattice structures

  13. Stacking faults and mechanisms strain-induced transformations of hcp metals (Ti, Mg) during mechanical activation in liquid hydrocarbons

    Science.gov (United States)

    Lubnin, A. N.; Dorofeev, G. A.; Nikonova, R. M.; Mukhgalin, V. V.; Lad'yanov, V. I.

    2017-11-01

    The evolution of the structure and substructure of metals Ti and Mg with hexagonal close-packed (hcp) lattice is studied during their mechanical activation in a planetary ball mill in liquid hydrocarbons (toluene, n-heptane) and with additions of carbon materials (graphite, fullerite, nanotubes) by X-ray diffraction, scanning electron microscopy, and chemical analysis. The temperature behavior and hydrogen-accumulating properties of mechanocomposites are studied. During mechanical activation of Ti and Mg, liquid hydrocarbons decay, metastable nanocrystalline titanium carbohydride Ti(C,H) x and magnesium hydride β-MgH2 are formed, respectively. The Ti(C,H) x and MgH2 formation mechanisms during mechanical activation are deformation ones and are associated with stacking faults accumulation, and the formation of face-centered cubic (fcc) packing of atoms. Metastable Ti(C,H)x decays at a temperature of 550°C, the partial reverse transformation fcc → hcp occurs. The crystalline defect accumulation (nanograin boundaries, stacking faults), hydrocarbon destruction, and mechanocomposite formation leads to the enhancement of subsequent magnesium hydrogenation in the Sieverts reactor.

  14. Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

    International Nuclear Information System (INIS)

    Guo, Yuzheng; Robertson, John

    2016-01-01

    We calculate a large difference in the band alignments for transition metal dichalcogenide (TMD) heterojunctions when arranged in the stacked layer or lateral (in-plane) geometries, using direct supercell calculations. The stacked case follows the unpinned limit of the electron affinity rule, whereas the lateral geometry follows the strongly pinned limit of alignment of charge neutrality levels. TMDs therefore provide one of the few clear tests of band alignment models, whereas three-dimensional semiconductors give less stringent tests because of accidental chemical trends in their properties.

  15. Effects of lattice fluctuations on electronic transmission in metal/conjugated-oligomer/metal structures

    International Nuclear Information System (INIS)

    Yu, Z.G.; Smith, D.L.; Saxena, A.; Bishop, A.R.

    1997-01-01

    The electronic transmission across metal/conjugated-oligomer/metal structures in the presence of lattice fluctuations is studied for short oligomer chains. The lattice fluctuations are approximated by static white noise disorder. Resonant transmission occurs when the energy of an incoming electron coincides with a discrete electronic level of the oligomer. The corresponding transmission peak diminishes in intensity with increasing disorder strength. Because of disorder there is an enhancement of the electronic transmission for energies that lie within the electronic gap of the oligomer. If fluctuations are sufficiently strong, a transmission peak within the gap is found at the midgap energy E=0 for degenerate conjugated oligomers (e.g., trans-polyacetylene) and E≠0 for AB-type degenerate oligomers. These results can be interpreted in terms of soliton-antisoliton states created by lattice fluctuations. copyright 1997 The American Physical Society

  16. Stacking faults on (001) in transition-metal disilicides with the C11b structure

    International Nuclear Information System (INIS)

    Ito, K.; Nakamoto, T.; Inui, H.; Yamaguchi, M.

    1997-01-01

    Stacking faults on (001) in MoSi 2 and WSi 2 with the C11 b structure have been characterized by transmission electron microscopy (TEM), using their single crystals grown by the floating-zone method. Although WSi 2 contains a high density of stacking faults, only several faults are observed in MoSi 2 . For both crystals, (001) faults are characterized to be of the Frank-type in which two successive (001) Si layers are removed from the lattice, giving rise to a displacement vector parallel to [001]. When the displacement vector of faults is expressed in the form of R = 1/n[001], however, their n values are slightly deviated from the exact value of 3, because of dilatation of the lattice in the direction perpendicular to the fault, which is caused by the repulsive interaction between Mo (W) layers above and below the fault. Matching of experimental high-resolution TEM images with calculated ones indicates n values to be 3.12 ± 0.10 and 3.34 ± 0.10 for MoSi 2 and WSi 2 , respectively

  17. Slip systems, dislocation boundaries and lattice rotations in deformed metals

    DEFF Research Database (Denmark)

    Winther, Grethe

    2009-01-01

    Metals are polycrystals and consist of grains, which are subdivided on a finer scale upon plastic deformation due to formation of dislocation boundaries. The crystallographic alignment of planar dislocation boundaries in face centred cubic metals, like aluminium and copper, deformed to moderate...... of the mechanical anisotropy of rolled sheets. The rotation of the crystallographic lattice in each grain during deformation also exhibits grain orientation dependence, originating from the slip systems. A combined analysis of dislocation boundaries and lattice rotations concludes that the two phenomena are coupled...

  18. On calculation of lattice parameters of refractory metal solid solutions

    International Nuclear Information System (INIS)

    Barsukov, A.D.; Zhuravleva, A.D.; Pedos, A.A.

    1995-01-01

    Technique for calculating lattice periods of solid solutions is suggested. Experimental and calculation values of lattice periods of some solid solutions on the basis of refractory metals (V-Cr, Nb-Zr, Mo-W and other) are presented. Calculation error was correlated with experimental one. 7 refs.; 2 tabs

  19. Lattice Location of Transition Metals in Semiconductors

    CERN Multimedia

    2002-01-01

    %IS366 %title\\\\ \\\\Transition metals (TMs) in semiconductors have been the subject of considerable research for nearly 40 years. This is due both to their role as important model impurities for deep centers in semiconductors, and to their technological impact as widespread contaminants in Si processing, where the miniaturization of devices requires to keep their sheet concentration below 10$^{10}$ cm$^{-2}$. As a consequence of the low TM solubility, conventional ion beam methods for direct lattice location have failed completely in identifying the lattice sites of isolated transition metals. Although electron paramagnetic resonance (EPR) has yielded valuable information on a variety of TM centers, it has been unable to detect certain defects considered by theory, e.g., isolated interstitial or substitutional Cu in Si. The proposed identity of other EPR centers such as substitutional Fe in Si, still needs confirmation by additional experimental methods. As a consequence, the knowledge on the structural propert...

  20. Sodium-Induced Reordering of Atomic Stacks in Black Phosphorus

    KAUST Repository

    Cheng, Yingchun

    2017-01-12

    While theoretical simulations predict contradictory results about how the intercalation of foreign metal atoms affects the order of atomic layers in black phosphorus (BP), no direct experimental visualization work has yet clarified this ambiguity. By in situ electrochemical sodiation of BP inside a high-resolution transmission electron microscope and first-principles calculations, we found that sodium intercalation induces a relative glide of/ ⟨010⟩ {001}, resulting in reordering of atomic stacks from AB to AC in BP. The observed local amorphization in our experiments is triggered by lattice constraints. We predict that intercalation of sodium or other metal atoms introduces n-type carriers in BP. This potentially opens a new field for two-dimensional electronics based on BP.

  1. Sodium-Induced Reordering of Atomic Stacks in Black Phosphorus

    KAUST Repository

    Cheng, Yingchun; Zhu, Yihan; Han, Yu; Liu, Zhongyuan; Yang, Bingchao; Nie, Anmin; Huang, Wei; Shahbazian-Yassar, Reza; Mashayek, Farzad

    2017-01-01

    While theoretical simulations predict contradictory results about how the intercalation of foreign metal atoms affects the order of atomic layers in black phosphorus (BP), no direct experimental visualization work has yet clarified this ambiguity. By in situ electrochemical sodiation of BP inside a high-resolution transmission electron microscope and first-principles calculations, we found that sodium intercalation induces a relative glide of/ ⟨010⟩ {001}, resulting in reordering of atomic stacks from AB to AC in BP. The observed local amorphization in our experiments is triggered by lattice constraints. We predict that intercalation of sodium or other metal atoms introduces n-type carriers in BP. This potentially opens a new field for two-dimensional electronics based on BP.

  2. Freeform Fabrication of Magnetophotonic Crystals with Diamond Lattices of Oxide and Metallic Glasses for Terahertz Wave Control by Micro Patterning Stereolithography and Low Temperature Sintering

    Directory of Open Access Journals (Sweden)

    Maasa Nakano

    2013-04-01

    Full Text Available Micrometer order magnetophotonic crystals with periodic arranged metallic glass and oxide glass composite materials were fabricated by stereolithographic method to reflect electromagnetic waves in terahertz frequency ranges through Bragg diffraction. In the fabrication process, the photo sensitive acrylic resin paste mixed with micrometer sized metallic glass of Fe72B14.4Si9.6Nb4 and oxide glass of B2O3·Bi2O3 particles was spread on a metal substrate, and cross sectional images of ultra violet ray were exposed. Through the layer by layer stacking, micro lattice structures with a diamond type periodic arrangement were successfully formed. The composite structures could be obtained through the dewaxing and sintering process with the lower temperature under the transition point of metallic glass. Transmission spectra of the terahertz waves through the magnetophotonic crystals were measured by using a terahertz time domain spectroscopy.

  3. Stacking metal nano-patterns and fabrication of moth-eye structure

    Science.gov (United States)

    Taniguchi, Jun

    2018-01-01

    Nanoimprint lithography (NIL) can be used as a tool for three-dimensional nanoscale fabrication. In particular, complex metal pattern structures in polymer material are demanded as plasmonic effect devices and metamaterials. To fabricate of metallic color filter, we used silver ink and NIL techniques. Metallic color filter was composed of stacking of nanoscale silver disc patterns and polymer layers, thus, controlling of polymer layer thickness is necessary. To control of thickness of polymer layer, we used spin-coating of UV-curable polymer and NIL. As a result, ten stacking layers with 1000 nm layer thickness was obtained and red color was observed. Ultraviolet nanoimprint lithography (UV-NIL) is the most effective technique for mass fabrication of antireflection structure (ARS) films. For the use of ARS films in mobile phones and tablet PCs, which are touch-screen devices, it is important to protect the films from fingerprints and dust. In addition, as the nanoscale ARS that is touched by the hand is fragile, it is very important to obtain a high abrasion resistance. To solve these problems, a UV-curable epoxy resin has been developed that exhibits antifouling properties and high hardness. The high abrasion resistance ARS films are shown to withstand a load of 250 g/cm2 in the steel wool scratch test, and the reflectance is less than 0.4%.

  4. Development of Robust Metal-Supported SOFCs and Stack Components in EU METSAPP Consortium

    DEFF Research Database (Denmark)

    Sudireddy, Bhaskar Reddy; Nielsen, Jimmi; Persson, Åsa Helen

    2017-01-01

    METSAPP project has been executed with an overall aim of developing advanced metal-supported cells and stacks based on a robust, reliable and up-scalable technology. During the project, oxidation resistant nanostructured anodes based on modified SrTiO3 were developed and integrated into MS...... and best performance and stability combination was observed with doped SrTiO3 based anode designs. Furthermore, numerical models to understand the corrosion behavior of the MS-SOFCs were developed and validated. Finally, the cost effective concept of coated metal interconnects was developed, which resulted...... in 90% reduction in Cr evaporation, three times lower Cr2O3 scale thickness and increased lifetime. The possibility of assembling these cells into two radically different stack designs was demonstrated....

  5. Fabricating large-area metallic woodpile photonic crystals using stacking and rolling

    International Nuclear Information System (INIS)

    Ibbotson, Lindsey A; Baumberg, Jeremy J

    2013-01-01

    Stacking thin polymer films supporting metal nanowire gratings provides a simple route, demonstrated here, to producing large-area metallic woodpile structures with high throughput. Under appropriate conditions the grating films can spontaneously roll up, giving a rapid and controllable method of creating multilayers. The resulting three-dimensional (3D) wire structures are flexible and potentially stretchable. Since this process can be extended to include a wide variety of functional materials, it opens up the manufacture of many tailored 3D optical metamaterials. (paper)

  6. Texture formation in metals with bcc lattice during drawing in dead rollers

    International Nuclear Information System (INIS)

    Gubchevskij, V.P.; Zemlyanskov, V.A.; Zlatoustovskij, D.M.; Nemkina, Eh.D.

    1976-01-01

    The texture of low-carbon steel, molybdenum and tungsten wires subjected to intermediate and finish drawing were studied to find whether it is common to metals with a body-centered lattice. Experimental data tend to indicate that both the intermediate drawing and the finish drawing give rise to two axial textures, or (110) and (114), parallel to the axis of drawing. It was inferred that the mechanism of the formation of texture in drawing is common to all the metals of a VCC lattice

  7. Is there lattice contraction in multicomponent metal oxides? Case study for GdVO4:Eu3+ nanoparticles

    Science.gov (United States)

    Yang, Liusai; Li, Liping; Zhao, Minglei; Fu, Chaochao; Li, Guangshe

    2013-08-01

    Metal oxide nanomaterials have been found to have great potential for diverse applications due to their unique relationships between structure and properties. Lattice expansion as particle size reduces was previously considered to be general for metal oxide nanomaterials. It is now a great challenge to see if lattice contraction could be induced by the size effect for metal oxide nanomaterials. ABO4 metal oxides (e.g., CaWO4, GdVO4, and CdWO4) are some of the most important functional materials with many applications, while such oxides at the nanoscale are never reported to show a lattice contraction. This work presents a first report on the variation from lattice expansion to lattice contraction by tuning the microstructures of GdVO4:Eu3+ nanocrystals. A hydrothermal method was adopted to synthesize GdVO4:Eu3+ nanocrystals, and then these nanoparticles were calcined at 600 ° C in air. It is found that particle size reduction led to a lattice contraction for the calcined samples, which is in contrast to the lattice expansion observed for the hydrothermally synthesized counterparts or many other metal oxide nanomaterials. In addition, the lattice symmetry of the calcined samples remained almost a constant. The results indicate that the negative surface stress was eliminated by calcination treatment, leading to a homogeneous compression process in the lattice structure of the calcined GdVO4:Eu3+ nanocrystals. Furthermore, Eu3+ was taken as a structural probe and a luminescence center to study the local environments pertinent to these structural changes and to optimize the photoluminescence performance.

  8. Near transferable phenomenological n-body potentials for noble metals.

    Science.gov (United States)

    Pontikis, Vassilis; Baldinozzi, Gianguido; Luneville, Laurence; Simeone, David

    2017-09-06

    We present a semi-empirical model of cohesion in noble metals with suitable parameters reproducing a selected set of experimental properties of perfect and defective lattices in noble metals. It consists of two short-range, n-body terms accounting respectively for attractive and repulsive interactions, the former deriving from the second moment approximation of the tight-binding scheme and the latter from the gas approximation of the kinetic energy of electrons. The stability of the face centred cubic versus the hexagonal compact stacking is obtained via a long-range, pairwise function of customary use with ionic pseudo-potentials. Lattice dynamics, molecular statics, molecular dynamics and nudged elastic band calculations show that, unlike previous potentials, this cohesion model reproduces and predicts quite accurately thermodynamic properties in noble metals. In particular, computed surface energies, largely underestimated by existing empirical cohesion models, compare favourably with measured values, whereas predicted unstable stacking-fault energy profiles fit almost perfectly ab initio evaluations from the literature. All together the results suggest that this semi-empirical model is nearly transferable.

  9. Two-extremum electrostatic potential of metal-lattice plasma and the work function of an electron

    Directory of Open Access Journals (Sweden)

    Surma S.A.

    2015-06-01

    Full Text Available Metal-lattice plasma is treated as a neutral two-component two-phase system of 2D surface and 3D bulk. Free electron density and bulk chemical potential are used as intensive parameters of the system with the phase boundary position determined in the crystalline lattice. A semiempirical expression for the electron screened electrostatic potential is constructed using the lattice-plasma polarization concept. It comprises an image term and three repulsion/attraction terms of second and fourth orders. The novel curve has two extremes and agrees with certain theoretical forms of potential. A practical formula for the electron work function of metals and a simplified schema of electronic structure at the metal/vacuum interface are proposed. This yields 10.44 eV for the Fermi energy of free electron gas; -5.817 eV for the Fermi energy level; 4.509 eV for the average work function of bcc tungsten. Selected data are also given for fcc Cu and hcp Re. For harmonic frequencies ~ 10E16 per s of the self-excited metal-lattice plasma, energy gaps of 14.54 and 8.02 eV are found, which correspond to the bulk and surface plasmons, respectively. Further extension of this thermodynamics and metal-lattice theory based approach may contribute to a better understanding of theoretical models which are employed in chemical physics, catalysis and materials science of nanostructures.

  10. Fermi level pinning in metal/Al{sub 2}O{sub 3}/InGaAs gate stack after post metallization annealing

    Energy Technology Data Exchange (ETDEWEB)

    Winter, R.; Krylov, I.; Cytermann, C.; Eizenberg, M. [Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Tang, K.; Ahn, J.; McIntyre, P. C. [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

    2015-08-07

    The effect of post metal deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stacks was investigated. The effective work functions of different metal gates (Al, Au, and Pt) were measured. Flat band voltage shifts for these and other metals studied suggest that their Fermi levels become pinned after the post-metallization vacuum annealing. Moreover, there is a difference between the measured effective work functions of Al and Pt, and the reported vacuum work function of these metals after annealing. We propose that this phenomenon is caused by charging of indium and gallium induced traps at the annealed metal/Al{sub 2}O{sub 3} interface.

  11. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  12. Basic criteria for formation of growth twins in high stacking fault energy metals

    International Nuclear Information System (INIS)

    Yu, K. Y.; Zhang, X.; Bufford, D.; Chen, Y.; Liu, Y.; Wang, H.

    2013-01-01

    Nanotwinned metals received significant interest lately as twin boundaries may enable simultaneous enhancement of strength, ductility, thermal stability, and radiation tolerance. However, nanotwins have been the privilege of metals with low-to-intermediate stacking fault energy (SFE). Recent scattered studies show that nanotwins could be introduced into high SFE metals, such as Al. In this paper, we examine several sputter-deposited, (111) textured Ag/Al, Cu/Ni, and Cu/Fe multilayers, wherein growth twins were observed in Al, Ni, and face-centered cubic (fcc) Fe. The comparisons lead to two important design criteria that dictate the introduction of growth twins in high SFE metals. The validity of these criteria was then examined in Ag/Ni multilayers. Furthermore, another twin formation mechanism in high SFE metals was discovered in Ag/Ni system

  13. The lattice thermal conductivity of pure metals: Aluminium and Indium, ch. 4

    International Nuclear Information System (INIS)

    Lang, H.N. de

    1977-01-01

    The lattice conductivity of aluminium and indium has been determined by reducing the electronic thermal conductivity by means of a magnetic field. This was done using the Corbino configuration which prevents the thermal Hall field from forming, hence produces the largest magnetoresistance for a given field strength. In this way for the first time the lattice conductivity of Al and In was measured by the magnetic field method. Apart from a discussion of these results, a comprehensive and critical examination is given of the different methods to determine the lattice conductivity of metals, the phenomenon of the linear magnetoresistance, the quadratic field dependence of the MR and the anomalous lattice conductivity of Potassium as well as the phenomenon of curve crossing

  14. Method for estimating the lattice thermal conductivity of metallic alloys

    International Nuclear Information System (INIS)

    Yarbrough, D.W.; Williams, R.K.

    1978-08-01

    A method is described for calculating the lattice thermal conductivity of alloys as a function of temperature and composition for temperatures above theta/sub D//2 using readily available information about the atomic species present in the alloy. The calculation takes into account phonon interactions with point defects, electrons and other phonons. Comparisons between experimental thermal conductivities (resistivities) and calculated values are discussed for binary alloys of semiconductors, alkali halides and metals. A discussion of the theoretical background is followed by sufficient numerical work to facilitate the calculation of lattice thermal conductivity of an alloy for which no conductivity data exist

  15. Backside versus frontside advanced chemical analysis of high-k/metal gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, E., E-mail: eugenie.martinez@cea.fr [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Saidi, B. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Veillerot, M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Caubet, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Fabbri, J-M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Piallat, F. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Gassilloud, R. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Schamm-Chardon, S. [CEMES-CNRS et Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)

    2015-08-15

    Highlights: • The backside approach is a promising solution for advanced chemical characterization of future MOSFETs. • Frontside ToF-SIMS and Auger depth profiles are affected by cumulative mixing effects and thus not relevant for analyzing ultra-thin layers. • Higher in-depth resolution is possible in the backside approach for Auger and ToF-SIMS depth profiling. • Backside depth profiling allows revealing ultra-thin layers and elemental in-depth redistribution inside high-k/metal gate stacks. • Backside XPS allows preserving the full metal gate, thus enabling the analysis of real technological samples. - Abstract: Downscaling of transistors beyond the 14 nm technological node requires the implementation of new architectures and materials. Advanced characterization methods are needed to gain information about the chemical composition of buried layers and interfaces. An effective approach based on backside analysis is presented here. X-ray photoelectron spectroscopy, Auger depth profiling and time-of-flight secondary ions mass spectrometry are combined to investigate inter-diffusion phenomena. To highlight improvements related to the backside method, backside and frontside analyses are compared. Critical information regarding nitrogen, oxygen and aluminium redistribution inside the gate stacks is obtained only in the backside configuration.

  16. Magnetic states, correlation effects and metal-insulator transition in FCC lattice

    Science.gov (United States)

    Timirgazin, M. A.; Igoshev, P. A.; Arzhnikov, A. K.; Irkhin, V. Yu

    2016-12-01

    The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson approach by Kotliar and Ruckenstein. The correlation-induced electron spectrum narrowing and a comparison with a generalized Hartree-Fock approximation allow one to estimate the strength of correlation effects. This, as well as the MIT scenario, depends dramatically on the ratio of the next-nearest and nearest electron hopping integrals {{t}\\prime}/t . In contrast with metallic state, possessing substantial band narrowing, insulator one is only weakly correlated. The magnetic (Slater) scenario of MIT is found to be superior over the Mott one. Unlike simple and body-centered cubic lattices, MIT is the first order transition (discontinuous) for most {{t}\\prime}/t . The insulator state is type-II or type-III antiferromagnet, and the metallic state is spin-spiral, collinear antiferromagnet or paramagnet depending on {{t}\\prime}/t . The picture of magnetic ordering is compared with that in the standard localized-electron (Heisenberg) model.

  17. Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide-Semiconductor Image Sensors.

    Science.gov (United States)

    Wu, Kuo-Tsai; Hwang, Sheng-Jye; Lee, Huei-Huang

    2017-05-02

    Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the leakage current and stack architecture, we compare the simulated and measured leakage currents in the elements. Based on the analysis results, we further improve the performance by optimizing the architecture of the film stacks or changing the thin-film material. The material parameters are then corrected to improve the accuracy of the simulation results. The simulated and experimental results confirm a positive correlation between measured leakage current and stress. This trend is attributed to the structural defects induced by high stress, which generate leakage. Using this relationship, we can change the structure of the thin-film stack to reduce the leakage current and thereby improve the component life and reliability of the CIS components.

  18. Ab initio lattice dynamics of metal surfaces

    International Nuclear Information System (INIS)

    Heid, R.; Bohnen, K.-P.

    2003-01-01

    Dynamical properties of atoms on surfaces depend sensitively on their bonding environment and thus provide valuable insight into the local geometry and chemical binding at the boundary of a solid. Density-functional theory provides a unified approach to the calculation of structural and dynamical properties from first principles. Its high accuracy and predictive power for lattice dynamical properties of semiconductor surfaces has been demonstrated in a previous article by Fritsch and Schroeder (Phys. Rep. 309 (1999) 209). In this report, we review the state-of-the-art of these ab initio approaches to surface dynamical properties of metal surfaces. We give a brief introduction to the conceptual framework with focus on recent advances in computational procedures for the ab initio linear-response approach, which have been a prerequisite for an efficient treatment of surface dynamics of noble and transition metals. The discussed applications to clean and adsorbate-covered surfaces demonstrate the high accuracy and reliability of this approach in predicting detailed microscopic properties of the phonon dynamics for a wide range of metallic surfaces

  19. Intrinsic Dirac half-metal and quantum anomalous Hall phase in a hexagonal metal-oxide lattice

    Science.gov (United States)

    Zhang, Shou-juan; Zhang, Chang-wen; Zhang, Shu-feng; Ji, Wei-xiao; Li, Ping; Wang, Pei-ji; Li, Sheng-shi; Yan, Shi-shen

    2017-11-01

    The quantum anomalous Hall (QAH) effect has attracted extensive attention due to time-reversal symmetry broken by a staggered magnetic flux emerging from ferromagnetic ordering and spin-orbit coupling. However, the experimental observations of the QAH effect are still challenging due to its small nontrivial bulk gap. Here, based on density functional theory and Berry curvature calculations, we propose the realization of intrinsic QAH effect in two-dimensional hexagonal metal-oxide lattice, N b2O3 , which is characterized by the nonzero Chern number (C =1 ) and chiral edge states. Spin-polarized calculations indicate that it exhibits a Dirac half-metal feature with temperature as large as TC=392 K using spin-wave theory. When the spin-orbit coupling is switched on, N b2O3 becomes a QAH insulator. Notably, the nontrivial topology is robust against biaxial strain with its band gap reaching up to Eg=75 meV , which is far beyond room temperature. A tight-binding model is further constructed to understand the origin of nontrivially electronic properties. Our findings on the Dirac half-metal and room-temperature QAH effect in the N b2O3 lattice can serve as an ideal platform for developing future topotronics devices.

  20. Comparison of 2-compartment, 3-compartment and stack designs for electrodialytic removal of heavy metals from harbour sediments

    DEFF Research Database (Denmark)

    Pedersen, Kristine B.; Ottosen, Lisbeth M.; Jensen, Pernille Erland

    2015-01-01

    Comparisons of cell and stack designs for the electrodialytic removal of heavy metals from two harbour sediments, were made. Multivariate modelling showed that sediment properties and experimental set-ups had the highest influence on the heavy metal removal indicating that they should be modelled...

  1. Stacking with stochastic cooling

    Energy Technology Data Exchange (ETDEWEB)

    Caspers, Fritz E-mail: Fritz.Caspers@cern.ch; Moehl, Dieter

    2004-10-11

    Accumulation of large stacks of antiprotons or ions with the aid of stochastic cooling is more delicate than cooling a constant intensity beam. Basically the difficulty stems from the fact that the optimized gain and the cooling rate are inversely proportional to the number of particles 'seen' by the cooling system. Therefore, to maintain fast stacking, the newly injected batch has to be strongly 'protected' from the Schottky noise of the stack. Vice versa the stack has to be efficiently 'shielded' against the high gain cooling system for the injected beam. In the antiproton accumulators with stacking ratios up to 10{sup 5} the problem is solved by radial separation of the injection and the stack orbits in a region of large dispersion. An array of several tapered cooling systems with a matched gain profile provides a continuous particle flux towards the high-density stack core. Shielding of the different systems from each other is obtained both through the spatial separation and via the revolution frequencies (filters). In the 'old AA', where the antiproton collection and stacking was done in one single ring, the injected beam was further shielded during cooling by means of a movable shutter. The complexity of these systems is very high. For more modest stacking ratios, one might use azimuthal rather than radial separation of stack and injected beam. Schematically half of the circumference would be used to accept and cool new beam and the remainder to house the stack. Fast gating is then required between the high gain cooling of the injected beam and the low gain stack cooling. RF-gymnastics are used to merge the pre-cooled batch with the stack, to re-create free space for the next injection, and to capture the new batch. This scheme is less demanding for the storage ring lattice, but at the expense of some reduction in stacking rate. The talk reviews the 'radial' separation schemes and also gives some

  2. Image transfer by cascaded stack of photonic crystal and air layers

    NARCIS (Netherlands)

    Shen, C.; Michielsen, K.; Raedt, H. De

    2006-01-01

    We demonstrate image transfer by a cascaded stack consisting of two and three triangular-lattice photonic crystal slabs separated by air. The quality of the image transfered by the stack is sensitive to the air/photonic crystal interface termination and the frequency. Depending on the frequency and

  3. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ogawa, Shingo [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Yoshigoe, Akitaka; Teraoka, Yuden [Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  4. Interface Modification of Bernal- and Rhombohedral-Stacked Trilayer-Graphene/Metal Electrode on Resistive Switching of Silver Electrochemical Metallization Cells.

    Science.gov (United States)

    Wang, Jer-Chyi; Chan, Ya-Ting; Chen, Wei-Fan; Wu, Ming-Chung; Lai, Chao-Sung

    2017-10-25

    Bernal- and rhombohedral-stacked trilayer graphene (B- and r-TLG) on nickel (Ni) and iridium (Ir) films acting as bottom electrodes (BEs) of silver electrochemical metallization cells (Ag-EMCs) have been investigated in this study. Prior to the fabrication of the EMC devices, Raman mapping and atomic force microscopy are applied to identify the B- and r-TLG sheets, with the latter revealing a significant D peak and a rough surface for the Ir film. The Ag-EMCs with the stacked BE of r-TLG on the Ir film show a conductive mechanism of Schottky emission at the positive top electrode bias for both high- and low-resistance states that can be examined by the resistance change with the device area and are modulated by pulse bias operation. Thus, an effective electron barrier height of 0.262 eV at the r-TLG and Ir interface is obtained because of the conspicuous energy gap of r-TLG on the Ir film and the van der Waals (vdW) gap between the r-TLG and Ir contact metal. With the use of Ni instead of Ir contact metal, the Ag-EMCs with TLG BE demonstrate +0.3 V/-0.75 V operation voltages, more than 10 4 s data retention at 115 °C and 250 times endurance testing, making the TLG sheets suitable for low-power nonvolatile memory applications on flexible substrates.

  5. Liquid metal liner implosion systems with blade lattice for fusion

    International Nuclear Information System (INIS)

    Itoh, Yasuyuki; Fujiie, Yoichi

    1980-01-01

    In this paper, the liquid liner implosion systems with the blade lattice is proposed for the rotational stabilization of the liner inner surface which is facing a plasma in a fusion reactor. The blades are electrically conducting and inclined to the radial direction. Its major function is either acceleration or deceleration of the liner in the azimuthal direction. This system enables us to exclude the rotary mechanism for the liner rotation. In this system, the liner is formed as an annular flow of a liquid metal (the waterfall concept). Results show that there is no significant difference of the energy cost for the stabilization compared with the earlier proposed system where a liner is rotated rigidly before implosion. Furthermore, the application of the rotating blade lattice makes it possible to reduce the rotational kinetic energy required for the stabilization at turnaround, where the lattice acts as an impeller in the initial liner rotation. There is an optimum blade angle to maximize the compressed magnetic field energy inside the liner for a given driving energy. (author)

  6. GPU-Accelerated Population Annealing Algorithm: Frustrated Ising Antiferromagnet on the Stacked Triangular Lattice

    Directory of Open Access Journals (Sweden)

    Borovský Michal

    2016-01-01

    Full Text Available The population annealing algorithm is a novel approach to study systems with rough free-energy landscapes, such as spin glasses. It combines the power of simulated annealing, Boltzmann weighted differential reproduction and sequential Monte Carlo process to bring the population of replicas to the equilibrium even in the low-temperature region. Moreover, it provides a very good estimate of the free energy. The fact that population annealing algorithm is performed over a large number of replicas with many spin updates, makes it a good candidate for massive parallelism. We chose the GPU programming using a CUDA implementation to create a highly optimized simulation. It has been previously shown for the frustrated Ising antiferromagnet on the stacked triangular lattice with a ferromagnetic interlayer coupling, that standard Markov Chain Monte Carlo simulations fail to equilibrate at low temperatures due to the effect of kinetic freezing of the ferromagnetically ordered chains. We applied the population annealing to study the case with the isotropic intra- and interlayer antiferromagnetic coupling (J2/|J1| = −1. The reached ground states correspond to non-magnetic degenerate states, where chains are antiferromagnetically ordered, but there is no long-range ordering between them, which is analogical with Wannier phase of the 2D triangular Ising antiferromagnet.

  7. Lattice vibrational properties of transition metal carbides (TiC, ZrC

    Indian Academy of Sciences (India)

    Lattice vibrational properties of transition metal carbides (TiC, ZrC and HfC) have been presented by including the effects of free-carrier doping and three-body interactions in the rigid shell model. The short-range overlap repulsion is operative up to the second neighbour ions. An excellent agreement has been obtained ...

  8. Environmental assessment of phosphogypsum stacks

    International Nuclear Information System (INIS)

    Odat, M.; Al-Attar, L.; Raja, G.; Abdul Ghany, B.

    2008-03-01

    Phosphogypsum is one of the most important by-products of phosphate fertilizer industry. It is kept in large stacks to the west of Homs city. Storing Phosphogypsum as open stacks exposed to various environmental effects, wind and rain, may cause pollution of the surrounding ecosystem (soil, plant, water and air). This study was carried out in order to assess the environmental impact of Phosphogypsum stacks on the surrounding ecosystem. The obtained results show that Phosphogypsum stacks did not increase the concentration of radionuclides, i.e. Radon-222 and Radium-226, the external exposed dose of gamma rays, as well as the concentration of heavy metals in the components of the ecosystem, soil, plant, water and air, as their concentrations did not exceed the permissible limits. However, the concentration of fluorine in the upper layer of soil, located to the east of the Phosphogypsum stacks, increased sufficiently, especially in the dry period of the year. Also, the concentration of fluoride in plants growing up near-by the Phosphogypsum stacks was too high, exceeded the permissible levels. This was reflected in poising plants and animals, feeding on the plants. Consequently, increasing the concentration of fluoride in soil and plants is the main impact of Phosphogypsum stacks on the surrounding ecosystem. Minimising this effect could be achieved by establishing a 50 meter wide protection zone surrounding the Phosphogypsum stacks, which has to be planted with non palatable trees, such as pine and cypress, forming wind barriers. Increasing the concentrations of heavy metals and fluoride in infiltrated water around the stacks was high; hence cautions must be taken to prevent its usage in any application or disposal in adjacent rivers and leaks.(author)

  9. Environmental assessment of phosphogypsum stacks

    International Nuclear Information System (INIS)

    Odat, M.; Al-Attar, L.; Raja, G.; Abdul Ghany, B.

    2009-01-01

    Phosphogypsum is one of the most important by-products of phosphate fertilizer industry. It is kept in large stacks to the west of Homs city. Storing Phosphogypsum as open stacks exposed to various environmental effects, wind and rain, may cause pollution of the surrounding ecosystem (soil, plant, water and air). This study was carried out in order to assess the environmental impact of Phosphogypsum stacks on the surrounding ecosystem. The obtained results show that Phosphogypsum stacks did not increase the concentration of radionuclides, i.e. Radon-222 and Radium-226, the external exposed dose of gamma rays, as well as the concentration of heavy metals in the components of the ecosystem, soil, plant, water and air, as their concentrations did not exceed the permissible limits. However, the concentration of fluorine in the upper layer of soil, located to the east of the Phosphogypsum stacks, increased sufficiently, especially in the dry period of the year. Also, the concentration of fluoride in plants growing up near-by the Phosphogypsum stacks was too high, exceeded the permissible levels. This was reflected in poising plants and animals, feeding on the plants. Consequently, increasing the concentration of fluoride in soil and plants is the main impact of Phosphogypsum stacks on the surrounding ecosystem. Minimising this effect could be achieved by establishing a 50 meter wide protection zone surrounding the Phosphogypsum stacks, which has to be planted with non palatable trees, such as pine and cypress, forming wind barriers. Increasing the concentrations of heavy metals and fluoride in infiltrated water around the stacks was high; hence cautions must be taken to prevent its usage in any application or disposal in adjacent rivers and leaks.(author)

  10. Local lattice relaxations in random metallic alloys: Effective tetrahedron model and supercell approach

    DEFF Research Database (Denmark)

    Ruban, Andrei; Simak, S.I.; Shallcross, S.

    2003-01-01

    We present a simple effective tetrahedron model for local lattice relaxation effects in random metallic alloys on simple primitive lattices. A comparison with direct ab initio calculations for supercells representing random Ni0.50Pt0.50 and Cu0.25Au0.75 alloys as well as the dilute limit of Au-ri......-rich CuAu alloys shows that the model yields a quantitatively accurate description of the relaxtion energies in these systems. Finally, we discuss the bond length distribution in random alloys....

  11. Temperature dependence of stacking faults in catalyst-free GaAs nanopillars.

    Science.gov (United States)

    Shapiro, Joshua N; Lin, Andrew; Ratsch, Christian; Huffaker, D L

    2013-11-29

    Impressive opto-electronic devices and transistors have recently been fabricated from GaAs nanopillars grown by catalyst-free selective-area epitaxy, but this growth technique has always resulted in high densities of stacking faults. A stacking fault occurs when atoms on the growing (111) surface occupy the sites of a hexagonal-close-pack (hcp) lattice instead of the normal face-centered-cubic (fcc) lattice sites. When stacking faults occur consecutively, the crystal structure is locally wurtzite instead of zinc-blende, and the resulting band offsets are known to negatively impact device performance. Here we present experimental and theoretical evidence that indicate stacking fault formation is related to the size of the critical nucleus, which is temperature dependent. The difference in energy between the hcp and fcc orientation of small nuclei is computed using density-function theory. The minimum energy difference of 0.22 eV is calculated for a nucleus with 21 atoms, so the population of nuclei in the hcp orientation is expected to decrease as the nucleus grows larger. The experiment shows that stacking fault occurrence is dramatically reduced from 22% to 3% by raising the growth temperature from 730 to 790 ° C. These data are interpreted using classical nucleation theory which dictates a larger critical nucleus at higher growth temperature.

  12. Lattice model of ionic liquid confined by metal electrodes

    Science.gov (United States)

    Girotto, Matheus; Malossi, Rodrigo M.; dos Santos, Alexandre P.; Levin, Yan

    2018-05-01

    We study, using Monte Carlo simulations, the density profiles and differential capacitance of ionic liquids confined by metal electrodes. To compute the electrostatic energy, we use the recently developed approach based on periodic Green's functions. The method also allows us to easily calculate the induced charge on the electrodes permitting an efficient implementation of simulations in a constant electrostatic potential ensemble. To speed up the simulations further, we model the ionic liquid as a lattice Coulomb gas and precalculate the interaction potential between the ions. We show that the lattice model captures the transition between camel-shaped and bell-shaped capacitance curves—the latter characteristic of ionic liquids (strong coupling limit) and the former of electrolytes (weak coupling). We observe the appearance of a second peak in the differential capacitance at ≈0.5 V for 2:1 ionic liquids, as the packing fraction is increased. Finally, we show that ionic size asymmetry decreases substantially the capacitance maximum, when all other parameters are kept fixed.

  13. Determination of the stacking fault energies of face centured cubic metals and alloys by X-rays diffraction

    International Nuclear Information System (INIS)

    Borges, J.F.A.; Padilha, A.F.; Imakuma, K.

    1988-03-01

    An X-rays diffraction method was applied to measure the Stacking Fault Energies (SFE) of the AISI 304, AISI 316, AISI 347 and DIN-WERKSTOFF 1.4970 Austenitic Stainless Steels. The SFE determination plays an important role in the research of the mecanichal behaviour of the Metal and Alloys, their deformation mechanisms, stability of micro-structure and electronic configuration. The method is based on the relationship between the SFE and the ratio of the Mean Square Strains to the Stacking-Fault probability. The Mean Square Strain was evaluated by Fourier Analysis of X-rays Diffaction profiles, corrected to reduce instrumental effects, followed by the application of the Warren-Averbach method to the Fourier Coefficients. The Stacking-Fault probabilities were derived from the changes of peak separations between cold-worked and annealed specimens. (author) [pt

  14. Development of Robust Metal-Supported SOFCs and Stack Components in EU METSAPP Consortium

    DEFF Research Database (Denmark)

    Sudireddy, Bhaskar Reddy; Nielsen, Jimmi; Persson, Åsa Helen

    2017-01-01

    -SOFCs to enhance their robustness. In addition, the manufacturing of metal-supported cells with different geometries, scalability of the manufacturing process was demonstrated and more than 200 cells with an area of ∼150 cm2 were produced. The electrochemical performance of different cell generations was evaluated...... in 90% reduction in Cr evaporation, three times lower Cr2O3 scale thickness and increased lifetime. The possibility of assembling these cells into two radically different stack designs was demonstrated....

  15. Microchannel neural interface manufacture by stacking silicone and metal foil laminae

    Science.gov (United States)

    Lancashire, Henry T.; Vanhoestenberghe, Anne; Pendegrass, Catherine J.; Ajam, Yazan Al; Magee, Elliot; Donaldson, Nick; Blunn, Gordon W.

    2016-06-01

    Objective. Microchannel neural interfaces (MNIs) overcome problems with recording from peripheral nerves by amplifying signals independent of node of Ranvier position. Selective recording and stimulation using an MNI requires good insulation between microchannels and a high electrode density. We propose that stacking microchannel laminae will improve selectivity over single layer MNI designs due to the increase in electrode number and an improvement in microchannel sealing. Approach. This paper describes a manufacturing method for creating MNIs which overcomes limitations on electrode connectivity and microchannel sealing. Laser cut silicone—metal foil laminae were stacked using plasma bonding to create an array of microchannels containing tripolar electrodes. Electrodes were DC etched and electrode impedance and cyclic voltammetry were tested. Main results. MNIs with 100 μm and 200 μm diameter microchannels were manufactured. High electrode density MNIs are achievable with electrodes present in every microchannel. Electrode impedances of 27.2 ± 19.8 kΩ at 1 kHz were achieved. Following two months of implantation in Lewis rat sciatic nerve, micro-fascicles were observed regenerating through the MNI microchannels. Significance. Selective MNIs with the peripheral nervous system may allow upper limb amputees to control prostheses intuitively.

  16. Phase engineering of monolayer transition-metal dichalcogenide through coupled electron doping and lattice deformation

    International Nuclear Information System (INIS)

    Ouyang, Bin; Lan, Guoqiang; Song, Jun; Guo, Yinsheng; Mi, Zetian

    2015-01-01

    First-principles calculations were performed to investigate the phase stability and transition within four monolayer transition-metal dichalcogenide (TMD) systems, i.e., MX 2 (M = Mo or W and X = S or Se) under coupled electron doping and lattice deformation. With the lattice distortion and electron doping density treated as state variables, the energy surfaces of different phases were computed, and the diagrams of energetically preferred phases were constructed. These diagrams assess the competition between different phases and predict conditions of phase transitions for the TMDs considered. The interplay between lattice deformation and electron doping was identified as originating from the deformation induced band shifting and band bending. Based on our findings, a potential design strategy combining an efficient electrolytic gating and a lattice straining to achieve controllable phase engineering in TMD monolayers was demonstrated

  17. Highly Conductive Transparent and Flexible Electrodes Including Double-Stacked Thin Metal Films for Transparent Flexible Electronics.

    Science.gov (United States)

    Han, Jun Hee; Kim, Do-Hong; Jeong, Eun Gyo; Lee, Tae-Woo; Lee, Myung Keun; Park, Jeong Woo; Lee, Hoseung; Choi, Kyung Cheol

    2017-05-17

    To keep pace with the era of transparent and deformable electronics, electrode functions should be improved. In this paper, an innovative structure is suggested to overcome the trade-off between optical and electrical properties that commonly arises with transparent electrodes. The structure of double-stacked metal films showed high conductivity (electronics are expected.

  18. Neutron data error estimate of criticality calculations for lattice in shielding containers with metal fissionable materials

    International Nuclear Information System (INIS)

    Vasil'ev, A.P.; Krepkij, A.S.; Lukin, A.V.; Mikhal'kova, A.G.; Orlov, A.I.; Perezhogin, V.D.; Samojlova, L.Yu.; Sokolov, Yu.A.; Terekhin, V.A.; Chernukhin, Yu.I.

    1991-01-01

    Critical mass experiments were performed using assemblies which simulated one-dimensional lattice consisting of shielding containers with metal fissile materials. Calculations of the criticality of the above assemblies were carried out using the KLAN program with the BAS neutron constants. Errors in the calculations of the criticality for one-, two-, and three-dimensional lattices are estimated. 3 refs.; 1 tab

  19. Plasmon polaritons in cubic lattices of spherical metallic nanoparticles

    Science.gov (United States)

    Lamowski, Simon; Mann, Charlie-Ray; Hellbach, Felicitas; Mariani, Eros; Weick, Guillaume; Pauly, Fabian

    2018-03-01

    We theoretically investigate plasmon polaritons in cubic lattices of spherical metallic nanoparticles. The nanoparticles, each supporting triply-degenerate localized surface plasmons, couple through the Coulomb dipole-dipole interaction, giving rise to collective plasmons that extend over the whole metamaterial. The latter hybridize with photons forming plasmon polaritons, which are the hybrid light-matter eigenmodes of the system. We derive general analytical expressions to evaluate both plasmon and plasmon-polariton dispersions and the corresponding eigenstates. These are obtained within a Hamiltonian formalism, which takes into account retardation effects in the dipolar interaction between the nanoparticles and considers the dielectric properties of the nanoparticles as well as their surrounding. Within this model we predict polaritonic splittings in the near-infrared to the visible range of the electromagnetic spectrum that depend on polarization, lattice symmetry, and wave-vector direction. Finally, we show that the predictions of our model are in excellent quantitative agreement with conventional finite-difference frequency-domain simulations, but with the advantages of analytical insight and significantly reduced computational cost.

  20. Strain-Driven Stacking Faults in CdSe/CdS Core/Shell Nanorods.

    Science.gov (United States)

    Demortière, Arnaud; Leonard, Donovan N; Petkov, Valeri; Chapman, Karena; Chattopadhyay, Soma; She, Chunxing; Cullen, David A; Shibata, Tomohiro; Pelton, Matthew; Shevchenko, Elena V

    2018-04-19

    Colloidal semiconductor nanocrystals are commonly grown with a shell of a second semiconductor material to obtain desired physical properties, such as increased photoluminescence quantum yield. However, the growth of a lattice-mismatched shell results in strain within the nanocrystal, and this strain has the potential to produce crystalline defects. Here, we study CdSe/CdS core/shell nanorods as a model system to investigate the influence of core size and shape on the formation of stacking faults in the nanocrystal. Using a combination of high-angle annular dark-field scanning transmission electron microscopy and pair-distribution-function analysis of synchrotron X-ray scattering, we show that growth of the CdS shell on smaller, spherical CdSe cores results in relatively small strain and few stacking faults. By contrast, growth of the shell on larger, prolate spheroidal cores leads to significant strain in the CdS lattice, resulting in a high density of stacking faults.

  1. Characterization, integration and reliability of HfO2 and LaLuO3 high-κ/metal gate stacks for CMOS applications

    International Nuclear Information System (INIS)

    Nichau, Alexander

    2013-01-01

    The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO 3 and HfO 2 are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO 3 and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO 3 is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO 3 on germanium, germanate formation is shown. LaLuO 3 is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO 3 in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO 3 and HfO 2 . Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO 2 gate stacks is scalable below 1 nm by the use of thinned interfacial SiO 2 . The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the gate electrode to decrease the EOT of HfO 2 gate stacks

  2. Void lattices

    International Nuclear Information System (INIS)

    Chadderton, L.T.; Johnson, E.; Wohlenberg, T.

    1976-01-01

    Void lattices in metals apparently owe their stability to elastically anisotropic interactions. An ordered array of voids on the anion sublattice in fluorite does not fit so neatly into this scheme of things. Crowdions may play a part in the formation of the void lattice, and stability may derive from other sources. (Auth.)

  3. Maturing of SOFC cell and stack production technology and preparation for demonstration of SOFC stacks. Part 2

    Energy Technology Data Exchange (ETDEWEB)

    2006-07-01

    The TOFC/Riso pilot plant production facility for the manufacture of anode-supported cells has been further up-scaled with an automated continuous spraying process and an extra sintering capacity resulting in production capacity exceeding 15,000 standard cells (12x12 cm2) in 2006 with a success rate of about 85% in the cell production. All processing steps such as tape-casting, spraying, screen-printing and atmospheric air sintering in the cell production have been selected on condition that up-scaling and cost effective, flexible, industrial mass production are feasible. The standard cell size is currently being increased to 18x18 cm2, and 150 cells of this size have been produced in 2006 for our further stack development. To improve quality and lower production cost, a new screen printing line is under establishment. TOFC's stack design is an ultra compact multilayer assembly of cells (including contact layers), metallic interconnects, spacer frames and glass seals. The compactness ensures minimized material consumption and low cost. Standard stacks with cross flow configuration contains 75 cells (12x12cm2) delivering about 1.2 kW at optimal operation conditions with pre-reformed NG as fuel. Stable performance has been demonstrated for 500-1000 hours. Significantly improved materials, especially concerning the metallic interconnect and the coatings have been introduced during the last year. Small stacks (5-10 cells) exhibit no detectable stack degradation using our latest cells and stack materials during test periods of 500-1000 hours. Larger stacks (50-75 cells) suffer from mal-distribution of gas and air inside the stacks, gas leakage, gas cross-over, pressure drop, and a certain loss of internal electrical contact during operation cycles. Measures have been taken to find solutions during the following development work. The stack production facilities have been improved and up-scaled. In 2006, 5 standard stacks have been assembled and burned in based on

  4. Emission Channeling Studies of the Lattice Site of Oversized Alkali Atoms Implanted in Metals

    CERN Multimedia

    2002-01-01

    % IS340 \\\\ \\\\ As alkali atoms have the largest atomic radius of all elements, the determination of their lattice configuration following implantation into metals forms a critical test for the various models predicting the lattice site of implanted impurity atoms. The site determination of these large atoms will especially be a crucial check for the most recent model that relates the substitutional fraction of oversized elements to their solution enthalpy. Recent exploratory $^{213}$Fr and $^{221}$Fr $\\alpha$-emission channeling experiments at ISOLDE-CERN and hyperfine interaction measurements on Fr implanted in Fe gave an indication for anomalously large substitutional fractions. To investigate further the behaviour of Fr and other alkali atoms like Cs and Rb thoroughly, more on-line emission channeling experiments are needed. We propose a number of shifts for each element, where the temperature of the implanted metals will be varied between 50$^\\circ$ and 700$^\\circ$~K. Temperature dependent measurements wi...

  5. Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Que, Yande; Xiao, Wende, E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn; Chen, Hui; Wang, Dongfei; Du, Shixuan; Gao, Hong-Jun, E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn [Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190 (China)

    2015-12-28

    The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.

  6. Tables of formulae for calculating the mechanics of stacks in gas-graphite reactors

    International Nuclear Information System (INIS)

    1968-01-01

    This collection of formulae only gives, for nuclear graphite stacks. The mechanical effects due to the strains, thermal or not, of steel structures supporting or surrounding graphite blocks. Equations have been established by mean of experiments made at Chinon with large pile models. Thus, it is possible to calculate displacement, strain and stress in the EDF type stacks of horizontal triangular block lattice. (authors) [fr

  7. Stacking dependence of carrier transport properties in multilayered black phosphorous

    Science.gov (United States)

    Sengupta, A.; Audiffred, M.; Heine, T.; Niehaus, T. A.

    2016-02-01

    We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with generalized gradient approximation (GGA) and the bandstructure, carrier effective masses and optical properties evaluated with the meta-generalized gradient approximation (MGGA). The carrier transmission in the various black phosphorous sheets was carried out with the non-equilibrium green’s function (NEGF) approach. The results show that ACA stacking has the highest electron and hole transmission probabilities. The results show tunability for a wide range of band-gaps, carrier effective masses and transmission with a great promise for lattice engineering (stacking order and layers) in black phosphorous.

  8. Creep mechanisms and constitutive relations in pure metals

    International Nuclear Information System (INIS)

    Nix, W.D.

    1979-01-01

    The mechanisms of creep of pure metals is briefly reviewed and divided into two parts: steady state flow mechanisms, and non-steady state flow mechanisms and constitutive relations. Creep by diffusional flow is now reasonably well understood, with theory and experiment in good agreement. The closely related phenomenon of Harper--Dorn creep can also be understood in terms of diffusion between dislocations. Power law creep involves the climb of edge disloctions controlled by lattice self diffusion. Theoretical treatments of this process invariably give a power law exponent of 3. This natural creep law is compared with the data for FCC and BCC metals. It is suggested that diffusion controlled climb is the controlling process in BCC metals at very high temperatures. Stacking fault energy effects may preclude the possibility that creep is controlled entirely by lattice self diffusion in some FCC metals. The subject of power law breakdown is presented as a natural consequence of the transition to low temperature flow phenomena. The role of core diffusion in this transition is briefly discussed. The mechanisms are presented by which pure metals creep at elevated temperatures. While most of this review deals with the mechanisms of steady state flow, some discussion is devoted to creep flow under non-steady state conditions. This topic is discussed in connection with the development of constitutive equations for describing plastic flow in metals

  9. Vortex lattices in layered superconductors

    International Nuclear Information System (INIS)

    Prokic, V.; Davidovic, D.; Dobrosavljevic-Grujic, L.

    1995-01-01

    We study vortex lattices in a superconductor--normal-metal superlattice in a parallel magnetic field. Distorted lattices, resulting from the shear deformations along the layers, are found to be unstable. Under field variation, nonequilibrium configurations undergo an infinite sequence of continuous transitions, typical for soft lattices. The equilibrium vortex arrangement is always a lattice of isocell triangles, without shear

  10. Numerical simulations of flux flow in stacked Josephson junctions

    DEFF Research Database (Denmark)

    Madsen, Søren Peder; Pedersen, Niels Falsig

    2005-01-01

    We numerically investigate Josephson vortex flux flow states in stacked Josephson junctions, motivated by recent experiments trying to observe the vortices in a square vortex lattice when a magnetic field is applied to layered high-Tc superconductors of the Bi2Sr2CaCu2Ox type. By extensive...

  11. Cryogenic Testing of High Current By-Pass Diode Stacks for the Protection of the Superconducting Magnets in the LHC

    Science.gov (United States)

    Gharib, A.; Hagedorn, D.; Della Corte, A.; Fiamozzi Zignani, C.; Turtu, S.; Brown, D.; Rout, C.

    2004-06-01

    For the protection of the LHC superconducting magnets, about 2100 specially developed by-pass diodes were manufactured by DYNEX SEMICONDUCTOR LTD (Lincoln, GB) and about 1300 of these diodes were mounted into diode stacks and submitted to tests at cryogenic temperatures. To date about 800 dipole diode stacks and about 250 quadrupole diode stacks for the protection of the superconducting lattice dipole and lattice quadrupole magnets have been assembled at OCEM (Bologna,Italy) and successfully tested in liquid helium at ENEA (Frascati, Italy). This report gives an overview of the test results obtained so far. After a short description of the test installations and test procedures, a statistical analysis is presented for test data during diode production as well as for the performance of the diode stacks during testing in liquid helium, including failure rates and degradation of the diodes.

  12. Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

    International Nuclear Information System (INIS)

    Cho, Ikjun; Cho, Jinhan; Kim, Beom Joon; Cho, Jeong Ho; Ryu, Sook Won

    2014-01-01

    Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-Au NPs ) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-Au NP ) n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO 2 gate dielectric layer. For a single Au NP layer (i.e. PAD/TOA-Au NP ) 1 ) with a number density of 1.82 × 10 12 cm −2 , the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four Au NP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔV th ) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 10 6 ) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate. (paper)

  13. Lightweight Stacks of Direct Methanol Fuel Cells

    Science.gov (United States)

    Narayanan, Sekharipuram; Valdez, Thomas

    2004-01-01

    An improved design concept for direct methanol fuel cells makes it possible to construct fuel-cell stacks that can weigh as little as one-third as much as do conventional bipolar fuel-cell stacks of equal power. The structural-support components of the improved cells and stacks can be made of relatively inexpensive plastics. Moreover, in comparison with conventional bipolar fuel-cell stacks, the improved fuel-cell stacks can be assembled, disassembled, and diagnosed for malfunctions more easily. These improvements are expected to bring portable direct methanol fuel cells and stacks closer to commercialization. In a conventional bipolar fuel-cell stack, the cells are interspersed with bipolar plates (also called biplates), which are structural components that serve to interconnect the cells and distribute the reactants (methanol and air). The cells and biplates are sandwiched between metal end plates. Usually, the stack is held together under pressure by tie rods that clamp the end plates. The bipolar stack configuration offers the advantage of very low internal electrical resistance. However, when the power output of a stack is only a few watts, the very low internal resistance of a bipolar stack is not absolutely necessary for keeping the internal power loss acceptably low.

  14. Asymmetric Flexible Supercapacitor Stack

    Directory of Open Access Journals (Sweden)

    Leela Mohana Reddy A

    2008-01-01

    Full Text Available AbstractElectrical double layer supercapacitor is very significant in the field of electrical energy storage which can be the solution for the current revolution in the electronic devices like mobile phones, camera flashes which needs flexible and miniaturized energy storage device with all non-aqueous components. The multiwalled carbon nanotubes (MWNTs have been synthesized by catalytic chemical vapor deposition technique over hydrogen decrepitated Mischmetal (Mm based AB3alloy hydride. The polymer dispersed MWNTs have been obtained by insitu polymerization and the metal oxide/MWNTs were synthesized by sol-gel method. Morphological characterizations of polymer dispersed MWNTs have been carried out using scanning electron microscopy (SEM, transmission electron microscopy (TEM and HRTEM. An assymetric double supercapacitor stack has been fabricated using polymer/MWNTs and metal oxide/MWNTs coated over flexible carbon fabric as electrodes and nafion®membrane as a solid electrolyte. Electrochemical performance of the supercapacitor stack has been investigated using cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy.

  15. Gate-tunable gigantic lattice deformation in VO2

    International Nuclear Information System (INIS)

    Okuyama, D.; Hatano, T.; Nakano, M.; Takeshita, S.; Ohsumi, H.; Tardif, S.; Shibuya, K.; Yumoto, H.; Koyama, T.; Ohashi, H.; Takata, M.; Kawasaki, M.; Tokura, Y.; Iwasa, Y.; Arima, T.

    2014-01-01

    We examined the impact of electric field on crystal lattice of vanadium dioxide (VO 2 ) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO 2 decreases through the thermally induced insulator-to-metal phase transition, the gate-induced metallization was found to result in a significant increase of the c-axis length by almost 1% from that of the thermally stabilized insulating state. We also found that this gate-induced gigantic lattice deformation occurs even at the thermally stabilized metallic state, enabling dynamic control of c-axis lattice parameter by more than 1% at room temperature

  16. On the measurement of the stacking-fault energies of face centered cubic metal and austenitic stainless steels by X-ray diffraction

    International Nuclear Information System (INIS)

    Borges, J.F.A.

    1985-01-01

    An X-rays diffraction method was applied to measure the Stacking-Fault Energies (SFE) of the AISI 304, AISI 316, AISI 347 and DIN-WERKSTOFF 1.4970 Austenitic Stainless Steels. The SFE determination plays an important role in the research of the mechanical behaviour of the Metal and Alloys, their deformation mechanisms, stability of microstructure amd electronic configuration. The method is based on the relationship between the SFE and the ratio of the Mean Square Strain to the Stacking-Fault probability. The Mean Square Strain was evaluated by Fourier Analysis of X-rays Diffraction profiles, corrected to reduce instrumental effects, followed by the application of the Warren-Averbach method to the Fourier Coefficients. The Stacking-Fault probabilities were derived from the changes of peak separations between cold-worked and annealed specimens. (author) [pt

  17. Characterization, integration and reliability of HfO{sub 2} and LaLuO{sub 3} high-κ/metal gate stacks for CMOS applications

    Energy Technology Data Exchange (ETDEWEB)

    Nichau, Alexander

    2013-07-15

    The continued downscaling of MOSFET dimensions requires an equivalent oxide thickness (EOT) of the gate stack below 1 nm. An EOT below 1.4 nm is hereby enabled by the use of high-κ/metal gate stacks. LaLuO{sub 3} and HfO{sub 2} are investigated as two different high-κ oxides on silicon in conjunction with TiN as the metal electrode. LaLuO{sub 3} and its temperature-dependent silicate formation are characterized by hard X-ray photoemission spectroscopy (HAXPES). The effective attenuation length of LaLuO{sub 3} is determined between 7 and 13 keV to enable future interface and diffusion studies. In a first investigation of LaLuO{sub 3} on germanium, germanate formation is shown. LaLuO{sub 3} is further integrated in a high-temperature MOSFET process flow with varying thermal treatment. The devices feature drive currents up to 70μA/μm at 1μm gate length. Several optimization steps are presented. The effective device mobility is related to silicate formation and thermal budget. At high temperature the silicate formation leads to mobility degradation due to La-rich silicate formation. The integration of LaLuO{sub 3} in high-T processes delicately connects with the optimization of the TiN metal electrode. Hereby, stoichiometric TiN yields the best results in terms of thermal stability with respect to Si-capping and high-κ oxide. Different approaches are presented for a further EOT reduction with LaLuO{sub 3} and HfO{sub 2}. Thereby the thermodynamic and kinetic predictions are employed to estimate the behavior on the nanoscale. Based on thermodynamics, excess oxygen in the gate stack, especially in oxidized metal electrodes, is identified to prevent EOT scaling below 1.2 nm. The equivalent oxide thickness of HfO{sub 2} gate stacks is scalable below 1 nm by the use of thinned interfacial SiO{sub 2}. The prevention of oxygen incorporation into the metal electrode by Si-capping maintains the EOT after high temperature annealing. Redox systems are employed within the

  18. Displacive phase transformations and generalized stacking faults

    Czech Academy of Sciences Publication Activity Database

    Paidar, Václav; Ostapovets, Andriy; Duparc, O. H.; Khalfallah, O.

    2012-01-01

    Roč. 122, č. 3 (2012), s. 490-492 ISSN 0587-4246. [International Symposium on Physics of Materials, ISPMA /12./. Praha, 04.09.2011-08.09.2011] R&D Projects: GA AV ČR IAA100100920 Institutional research plan: CEZ:AV0Z10100520 Keywords : ab-initio calculations * close-packed structures * generalized stacking faults * homogeneous deformation * lattice deformation * many-body potentials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.531, year: 2012

  19. Low-temperature embrittlement and fracture of metals with different crystal lattices – Dislocation mechanisms

    Directory of Open Access Journals (Sweden)

    V.M. Chernov

    2016-12-01

    Full Text Available The state of a low-temperature embrittlement (cold brittleness and dislocation mechanisms for formation of the temperature of a ductile-brittle transition and brittle fracture of metals (mono- and polycrystals with various crystal lattices (BCC, FCC, HCP are considered. The conditions for their formation connected with a stress-deformed state and strength (low temperature yield strength as well as the fracture breaking stress and mobility of dislocations in the top of a crack of the fractured metal are determined. These conditions can be met for BCC and some HCP metals in the initial state (without irradiation and after a low-temperature damaging (neutron irradiation. These conditions are not met for FCC and many HCP metals. In the process of the damaging (neutron irradiation such conditions are not met also and the state of low-temperature embrittlement of metals is absent (suppressed due to arising various radiation dynamic processes, which increase the mobility of dislocations and worsen the strength characteristics.

  20. Thermodynamic and critical properties of an antiferromagnetically stacked triangular Ising antiferromagnet in a field

    Science.gov (United States)

    Žukovič, M.; Borovský, M.; Bobák, A.

    2018-05-01

    We study a stacked triangular lattice Ising model with both intra- and inter-plane antiferromagnetic interactions in a field, by Monte Carlo simulation. We find only one phase transition from a paramagnetic to a partially disordered phase, which is of second order and 3D XY universality class. At low temperatures we identify two highly degenerate phases: at smaller (larger) fields the system shows long-range ordering in the stacking direction (within planes) but not in the planes (stacking direction). Nevertheless, crossovers to these phases do not have a character of conventional phase transitions but rather linear-chain-like excitations.

  1. Lattice location of implanted transition metals in 3C–SiC

    CERN Document Server

    AUTHOR|(CDS)2085259; Wahl, Ulrich; Martins Correia, Joao; David Bosne, Eric; Amorim, Lígia; Silva, Daniel; Castro Ribeiro Da Silva, Manuel; Bharuth-Ram, Krishanlal; Da Costa Pereira, Lino Miguel

    2017-01-01

    We have investigated the lattice location of implanted transition metal (TM) 56Mn, 59Fe and 65Ni ions in undoped single-crystalline cubic 3C–SiC by means of the emission channeling technique using radioactive isotopes produced at the CERN-ISOLDE facility. We find that in the room temperature as-implanted state, most Mn, Fe and Ni atoms occupy carbon-coordinated tetrahedral interstitial sites (TC). Smaller TM fractions were also found on Si substitutional (SSi) sites. The TM atoms partially disappear from ideal-TC positions during annealing at temperatures between 500 °C and 700 °C, which is accompanied by an increase in the TM fraction occupying both SSi sites and random sites. An explanation is given according to what is known about the annealing mechanisms of silicon vacancies in silicon carbide. The origin of the observed lattice sites and their changes with thermal annealing are discussed and compared to the case of Si, highlighting the feature that the interstitial migration of TMs in SiC is much slo...

  2. Search for the in-phase Flux Flow mode in stacked Josephson junctions

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Madsen, Søren Peder

    2006-01-01

    Josephson vortex flux flow states in stacked Josephson junctions are investigated numerically. The aim of the work is to understand the mechanisms behind the formation of triangular (anti-phase) and square (in-phase) vortex lattices, and is motivated by recent experiments on layered BSCCO type high......-T-c superconductors in a magnetic field. In order to keep the problem as simple as possible we consider in detail only the case with two junctions in the stack. (c) 2006 Elsevier B.V. All rights reserved....

  3. THE MASS-METALLICITY RELATION WITH THE DIRECT METHOD ON STACKED SPECTRA OF SDSS GALAXIES

    Energy Technology Data Exchange (ETDEWEB)

    Andrews, Brett H.; Martini, Paul, E-mail: andrews@astronomy.ohio-state.edu [Department of Astronomy, Ohio State University, 140 West 18th Avenue, Columbus, OH 43210 (United States)

    2013-03-10

    The relation between galaxy stellar mass and gas-phase metallicity is a sensitive diagnostic of the main processes that drive galaxy evolution, namely cosmological gas inflow, metal production in stars, and gas outflow via galactic winds. We employed the direct method to measure the metallicities of {approx}200,000 star-forming galaxies from the Sloan Digital Sky Survey that were stacked in bins of (1) stellar mass and (2) both stellar mass and star formation rate (SFR) to significantly enhance the signal-to-noise ratio of the weak [O III] {lambda}4363 and [O II] {lambda}{lambda}7320, 7330 auroral lines required to apply the direct method. These metallicity measurements span three decades in stellar mass from log(M{sub *}/M{sub Sun }) = 7.4-10.5, which allows the direct method mass-metallicity relation to simultaneously capture the high-mass turnover and extend a full decade lower in mass than previous studies that employed more uncertain strong line methods. The direct method mass-metallicity relation rises steeply at low mass (O/H {proportional_to} M{sub *} {sup 1/2}) until it turns over at log(M{sub *}/M{sub Sun }) = 8.9 and asymptotes to 12 + log(O/H) = 8.8 at high mass. The direct method mass-metallicity relation has a steeper slope, a lower turnover mass, and a factor of two to three greater dependence on SFR than strong line mass-metallicity relations. Furthermore, the SFR-dependence appears monotonic with stellar mass, unlike strong line mass-metallicity relations. We also measure the N/O abundance ratio, an important tracer of star formation history, and find the clear signature of primary and secondary nitrogen enrichment. N/O correlates tightly with oxygen abundance, and even more so with stellar mass.

  4. Fluxons in long and annular intrinsic Josephson junction stacks

    CERN Document Server

    Clauss, T; Moessle, M; Müller, A; Weber, A; Kölle, D; Kleiner, R

    2002-01-01

    A promising approach towards a THz oscillator based on intrinsic Josephson junctions in high-temperature superconductors is based on the collective motion of Josephson fluxons, which are predicted to form various configurations ranging from a triangular to a quadratic lattice. Not only for this reason, but certainly also for the sake of basic physics, several experimental and theoretical investigations have been done on the subject of collective fluxon dynamics in stacked intrinsic Josephson junctions. In this paper we will present some experimental results on the fluxon dynamics of long intrinsic Josephson junction stacks made of Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8. The stacks were formed either in an open or in an annular geometry, and clear resonant fluxon modes were observed. Experiments discussed include measurements of current-voltage characteristics in external magnetic fields and in external microwave fields.

  5. Hot Embossing of Zr-Based Bulk Metallic Glass Micropart Using Stacked Silicon Dies

    Directory of Open Access Journals (Sweden)

    Zhijing Zhu

    2015-01-01

    Full Text Available We demonstrated hot embossing of Zr65Cu17.5Ni10Al7.5 bulk metallic glass micropart using stacked silicon dies. Finite element simulation was carried out, suggesting that it could reduce the stress below 400 MPa in the silicon dies and enhance the durability of the brittle silicon dies when using varying load mode (100 N for 60 s and then 400 N for 60 s compared with using constant load mode (200 N for 120 s. A micropart with good appearance was fabricated under the varying load, and no silicon die failure was observed, in agreement with the simulation. The amorphous state of the micropart was confirmed by differential scanning calorimeter and X-ray diffraction, and the nanohardness and Young’s modulus were validated close to those of the as-cast BMG rods by nanoindentation tests. The results proved that it was feasible to adopt the varying load mode to fabricate three-dimensional Zr-based bulk metallic glass microparts by hot embossing process.

  6. Gate-tunable gigantic lattice deformation in VO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Okuyama, D., E-mail: okuyama@riken.jp, E-mail: nakano@imr.tohoku.ac.jp, E-mail: iwasa@ap.t.u-tokyo.ac.jp; Hatano, T. [RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Nakano, M., E-mail: okuyama@riken.jp, E-mail: nakano@imr.tohoku.ac.jp, E-mail: iwasa@ap.t.u-tokyo.ac.jp [RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Takeshita, S.; Ohsumi, H.; Tardif, S. [RIKEN SPring-8 Center, Hyogo 679-5148 (Japan); Shibuya, K. [National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8562 (Japan); Yumoto, H.; Koyama, T.; Ohashi, H. [Japan Synchrotron Radiation Research Institute, SPring-8, Hyogo 679-5198 (Japan); Takata, M. [RIKEN SPring-8 Center, Hyogo 679-5148 (Japan); Japan Synchrotron Radiation Research Institute, SPring-8, Hyogo 679-5198 (Japan); Kawasaki, M.; Tokura, Y.; Iwasa, Y., E-mail: okuyama@riken.jp, E-mail: nakano@imr.tohoku.ac.jp, E-mail: iwasa@ap.t.u-tokyo.ac.jp [RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Quantum-Phase Electronics Center and Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan); Arima, T. [RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); RIKEN SPring-8 Center, Hyogo 679-5148 (Japan); Department of Advanced Materials Science, University of Tokyo, Kashiwa 277-8561 (Japan)

    2014-01-13

    We examined the impact of electric field on crystal lattice of vanadium dioxide (VO{sub 2}) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO{sub 2} decreases through the thermally induced insulator-to-metal phase transition, the gate-induced metallization was found to result in a significant increase of the c-axis length by almost 1% from that of the thermally stabilized insulating state. We also found that this gate-induced gigantic lattice deformation occurs even at the thermally stabilized metallic state, enabling dynamic control of c-axis lattice parameter by more than 1% at room temperature.

  7. Efficient modeling of metallic interconnects for thermo-mechanical simulation of SOFC stacks: homogenized behaviors and effect of contact

    DEFF Research Database (Denmark)

    Tadesse Molla, Tesfaye; Kwok, Kawai; Frandsen, Henrik Lund

    2016-01-01

    temperature, deformations involving the elastic, creep as well as effect of changes in the geometry due to contact should be accounted for. The constitutive law can be applied using 3D modeling, but for simple presentation of the theory, 2D plane strain formulation is used to model the corrugated metallic......Currently thermo-mechanical analysis of the entire solid oxide fuel cell (SOFC) stack at operational conditions is computationally challenging if the geometry of metallic interconnects is considered explicitly. This is particularly the case when creep deformations in the interconnect are considered...... model to calculate the homogenized mechanical response of corrugated metallic interconnects at high temperatures.Thereafter, a constitutive law for the homogenized structure (effective material law) is developed. In order to properly describe the mechanical behavior of the interconnect at high...

  8. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

    2016-08-30

    Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

  9. Method of detecting stacks with leaky fuel elements in liquid-metal-cooled reactor and apparatus for effecting same

    International Nuclear Information System (INIS)

    Aristarkhov, N.N.; Efimov, I.A.; Zaistev, B.I.; Peters, I.G.; Tymosh, B.S.

    1976-01-01

    Described is a method of detecting stacks with leaky fuel elements in a liquid-metal-cooled reactor, consisting in that prior to withdrawing a coolant sample, gas is accumulated in the coolant of the stack being controlled, the reactor being shut down, separated from the sample by means of an inert carrier gas, and the radioactivity of the separated gas is measured. An apparatus for carrying out said method comprises a sampler in the form of a tube parallel to the reactor axis in the hole of a rotating plug and adapted to move along the reactor axis. Made in the top portion of the tube are holes for the introduction of the inert carrier gas and the removal thereof together with the gases evolved from the coolant, while the bottom portion of the tube is provided with a sealing member

  10. Short-Range Stacking Disorder in Mixed-Layer Compounds: A HAADF STEM Study of Bastnäsite-Parisite Intergrowths

    Directory of Open Access Journals (Sweden)

    Cristiana L. Ciobanu

    2017-11-01

    Full Text Available Atomic-scale high angle annular dark field scanning transmission electron microscopy (HAADF STEM imaging and electron diffractions are used to address the complexity of lattice-scale intergrowths of REE-fluorocarbonates from an occurrence adjacent to the Olympic Dam deposit, South Australia. The aims are to define the species present within the intergrowths and also assess the value of the HAADF STEM technique in resolving stacking sequences within mixed-layer compounds. Results provide insights into the definition of species and crystal-structural modularity. Lattice-scale intergrowths account for the compositional range between bastnäsite and parasite, as measured by electron probe microanalysis (at the µm-scale throughout the entire area of the intergrowths. These comprise rhythmic intervals of parisite and bastnäsite, or stacking sequences with gradational changes in the slab stacking between B, BBS and BS types (B—bastnäsite, S—synchysite. An additional occurrence of an unnamed B2S phase [CaCe3(CO34F3], up to 11 unit cells in width, is identified among sequences of parisite and bastnäsite within the studied lamellar intergrowths. Both B2S and associated parisite show hexagonal lattices, interpreted as 2H polytypes with c = 28 and 38 Å, respectively. 2H parisite is a new, short hexagonal polytype that can be added to the 14 previously reported polytypes (both hexagonal and rhombohedral for this mineral. The correlation between satellite reflections and the number of layers along the stacking direction (c* can be written empirically as: Nsat = [(m × 2 + (n × 4] − 1 for all BmSn compounds with S ≠ 0. The present study shows intergrowths characterised by short-range stacking disorder and coherent changes in stacking along perpendicular directions. Knowing that the same compositional range can be expressed as long-period stacking compounds in the group, the present intergrowths are interpreted as being related to disequilibrium

  11. A new electron gas model for lattice vibrations in metals I : development of the model

    International Nuclear Information System (INIS)

    Ramamurthy, V.; Neelkandan, K.

    1978-01-01

    The theoretical study of the lattice dynamics of metals is generally based on either the phenomenological force constant method or the pseudopotential method. However, it has been found that all the existing phenomenological models are inconsistent. Hence a new model based on the deformation potential approximation has been developed. By comparing this model with the existing models, its salient features and limitations are discussed. (author)

  12. Alloying behaviour of electroplated Ag film with its underlying Pd/Ti film stack for low resistivity interconnect metallization

    International Nuclear Information System (INIS)

    Ezawa, Hirokazu; Miyata, Masahiro; Tatsumi, Kohei

    2014-01-01

    Highlights: • Alloying behavior of Ag/Pd/Ti film stack was studied by annealing at 400-800 °C. • The Ag film resistivity decreased with increasing annealing temperature. • Formation of the Pd-Ti intermetallics was found to be dominant over Ag-Pd alloying. • The excess Ti was consumed to form Ti oxides, which inhibited Ti alloying with Ag. -- Abstract: In this paper, viability of electroplated Ag film into device application was studied. Alloying behavior of the Ag film with its underlying Pd(50 nm)/Ti(100 nm) film stack was investigated with respect to heat treatment at different temperatures from 400 °C to 800 °C in an argon ambient. After annealing at 400 °C, the electrical resistivity of the Ag film increased due to Pd alloying with Ag. Formation of Pd–Ti intermetallic phases became dominant over Ag–Pd alloying with increasing annealing temperature, leading to the resistivity decrease of the Ag film. The resistivity of the 800 °C annealed Ag film approached that of its as-plated Ag film. The excess Ti atoms which were not consumed to form the intermetallic phases with the Pd atoms migrated to the Ag film surface to form Ti oxides along the Ag grain boundaries on the topmost film surface. The Ag/Pd/Ti film stack has been confirmed to maintain the resistivity of the Ag film at as-plated low levels after high temperature annealing. This paper also discusses process integration issues to enable the Ag metallization process for future scaled and three dimensionally chip stacked devices

  13. Thermal expansion and lattice parameters of shaped metal deposited Ti-6Al-4V

    Energy Technology Data Exchange (ETDEWEB)

    Swarnakar, Akhilesh Kumar; Van der Biest, Omer [Katholieke Universiteit Leuven, MTM, Kasteelpark Arenberg 44, 3001 Leuven (Belgium); Baufeld, Bernd, E-mail: b.baufeld@sheffield.ac.uk [Katholieke Universiteit Leuven, MTM, Kasteelpark Arenberg 44, 3001 Leuven (Belgium)

    2011-02-10

    Research highlights: > Measurement of thermal expansion and of the lattice parameters of Ti-6Al-4V fabricated by shaped metal deposition up to 1100 {sup o}C. > The observation of alpha to beta transformation not reflected in the expansion but in the contraction curve is explained by non-equilibrium alpha phase of the SMD material. > Denuding of the {alpha} phase and enrichment of the {beta} phase of Vanadium due to high temperature experiments. > The unit cell volumes derived from lattice parameters measured by X-ray diffraction are at room temperature larger for the {alpha} than for the {beta} phase. With increasing temperature the unit cell volume of the {beta} phase increases stronger than the one of the {alpha} phase resulting in a similar unit cell volume at the {beta} transus temperature. - Abstract: Thermal expansion and lattice parameters are investigated up to 1100 deg. C for Ti-6Al-4V components, fabricated by shaped metal deposition. This is a novel additive layer manufacturing technique where near net-shape components are built by tungsten inert gas welding. The as-fabricated SMD Ti-6Al-4V components exhibit a constant coefficient of thermal expansion of 1.17 x 10{sup -5} K{sup -1} during heating up to 1100 {sup o}C, not reflecting the {alpha} to {beta} phase transformation. During cooling a stalling of the contraction is observed starting at the {beta} transus temperature. These high temperature experiments denude the {alpha} phase of V and enrich the {beta} phase. The development of the lattice parameters in dependence on temperature are observed with high temperature X-ray diffraction. The unit cell volumes derived from these parameters are at room temperature larger for the {alpha} than for the {beta} phase. With increasing temperature the unit cell volume of the {beta} phase increases stronger than the one of the {alpha} phase resulting in a similar unit cell volume at the {beta} transus temperature. These observations are interpreted as an

  14. Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

    Science.gov (United States)

    Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

    2018-05-01

    The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

  15. Development and preliminary experimental study on micro-stacked insulator

    International Nuclear Information System (INIS)

    Ren Chengyan; Yuan Weiqun; Zhang Dongdong; Yan Ping; Wang Jue

    2009-01-01

    High gradient insulating technology is one of the key technologies in new type dielectric wall accelerator(DWA). High gradient insulator, namely micro-stacked insulator, was developed and preliminary experimental study was done. Based on the finite element and particle simulating method, surface electric field distribution and electron movement track of micro-stacked insulator were numerated, and then the optimized design proposal was put forward. Using high temperature laminated method, we developed micro-stacked insulator samples which uses exhaustive fluorinated ethylene propylene(FEP) as dielectric layer and stainless steel as metal layer. Preliminary experiment of vacuum surface flashover in nanosecond pulse voltage was done and micro-stacked insulator exhibited favorable vacuum surface flashover performance with flashover field strength of near 180 kV/cm. (authors)

  16. Levitation characteristics of HTS tape stacks

    Energy Technology Data Exchange (ETDEWEB)

    Pokrovskiy, S. V.; Ermolaev, Y. S.; Rudnev, I. A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

    2015-03-15

    Due to the considerable development of the technology of second generation high-temperature superconductors and a significant improvement in their mechanical and transport properties in the last few years it is possible to use HTS tapes in the magnetic levitation systems. The advantages of tapes on a metal substrate as compared with bulk YBCO material primarily in the strength, and the possibility of optimizing the convenience of manufacturing elements of levitation systems. In the present report presents the results of the magnetic levitation force measurements between the stack of HTS tapes containing of tapes and NdFeB permanent magnet in the FC and ZFC regimes. It was found a non- linear dependence of the levitation force from the height of the array of stack in both modes: linear growth at small thickness gives way to flattening and constant at large number of tapes in the stack. Established that the levitation force of stacks comparable to that of bulk samples. The numerical calculations using finite element method showed that without the screening of the applied field the levitation force of the bulk superconductor and the layered superconductor stack with a critical current of tapes increased by the filling factor is exactly the same, and taking into account the screening force slightly different.

  17. Direct observation of both contact and remote oxygen scavenging of GeO2 in a metal-oxide-semiconductor stack

    International Nuclear Information System (INIS)

    Fadida, S.; Shekhter, P.; Eizenberg, M.; Cvetko, D.; Floreano, L.; Verdini, A.; Nyns, L.; Van Elshocht, S.; Kymissis, I.

    2014-01-01

    In the path to incorporating Ge based metal-oxide-semiconductor into modern nano-electronics, one of the main issues is the oxide-semiconductor interface quality. Here, the reactivity of Ti on Ge stacks and the scavenging effect of Ti were studied using synchrotron X-ray photoelectron spectroscopy measurements, with an in-situ metal deposition and high resolution transmission electron microscopy imaging. Oxygen removal from the Ge surface was observed both in direct contact as well as remotely through an Al 2 O 3 layer. The scavenging effect was studied in situ at room temperature and after annealing. We find that the reactivity of Ti can be utilized for improved scaling of Ge based devices.

  18. Calculation of AC losses in large HTS stacks and coils

    DEFF Research Database (Denmark)

    Zermeno, Victor; Abrahamsen, Asger Bech; Mijatovic, Nenad

    2012-01-01

    In this work, we present a homogenization method to model a stack of HTS tapes under AC applied transport current or magnetic field. The idea is to find an anisotropic bulk equivalent for the stack of tapes, where the internal alternating structures of insulating, metallic, superconducting...... allowing for overcritical current densities to be considered. The method presented here allowed for a computational speedup factor of up to 2 orders of magnitude when compared to full 2-D simulations taking into account the actual structure of the stacks without compromising accuracy....

  19. The SLUGGS survey: globular cluster stellar population trends from weak absorption lines in stacked spectra

    Science.gov (United States)

    Usher, Christopher; Forbes, Duncan A.; Brodie, Jean P.; Romanowsky, Aaron J.; Strader, Jay; Conroy, Charlie; Foster, Caroline; Pastorello, Nicola; Pota, Vincenzo; Arnold, Jacob A.

    2015-01-01

    As part of the SAGES Legacy Unifying Globulars and GalaxieS (SLUGGS) survey, we stack 1137 Keck DEIMOS (Deep Imaging Multi-Object Spectrograph) spectra of globular clusters from 10 galaxies to study their stellar populations in detail. The stacked spectra have median signal-to-noise ratios of ˜90 Å-1. Besides the calcium triplet, we study weaker sodium, magnesium, titanium and iron lines as well as the Hα and higher order Paschen hydrogen lines. In general, the stacked spectra are consistent with old ages and a Milky Way-like initial mass function. However, we see different metal line index strengths at fixed colour and magnitude, and differences in the calcium triplet-colour relation from galaxy to galaxy. We interpret this as strong evidence for variations in the globular cluster colour-metallicity relation between galaxies. Two possible explanations for the colour-metallicity relation variations are that the average ages of globular clusters vary from galaxy to galaxy or that the average abundances of light elements (i.e. He, C, N and O) differ between galaxies. Stacking spectra by magnitude, we see that the colours become redder and metal line indices stronger with brighter magnitudes. These trends are consistent with the previously reported `blue tilts' being mass-metallicity relations.

  20. Routes to a commercially viable PEM fuel cell stack

    Energy Technology Data Exchange (ETDEWEB)

    Newton, J.; Foster, S.E.; Hodgson, D.; Marrett, A.

    2002-07-01

    This report describes the results of a project to design and build a 10 kW{sub e} proton exchange membrane fuel cell (PEMFC) stack, including membrane electrode assemblies (MEAs), bipolar plates and stack hardware. The aim was to prove the design concept and to demonstrate functionality by operating the stack at >1 kW{sub e}/L and 500 W/kg for 200 hours operation. The project was extended to include the assembly and testing of two additional 1 kW{sub e} PEMFC stacks based on coated metal components. Low equivalent weight perfluorinated ionomer ion exchange membranes were prepared and were found to give a superior electrochemical performance to commercial materials. A technique to etch various stainless steel grades and control processes was successfully developed and optimised. Coatings for stainless steel and titanium were successfully developed and met the required performance criteria. All PEMFC stack components were selected and designed to enable subsequent commercial manufacture.

  1. Stacks with TiN/titanium as the bipolar plate for PEMFCs

    International Nuclear Information System (INIS)

    Ren, Zhijun; Zhang, Dongming; Wang, Zaiyi

    2012-01-01

    Proton exchange membrane fuel cell (PEMFC) is a potential alternative for the internal combustion engine. But many problems, such as metallic bipolar plate instead of graphite bipolar plate to decrease the cost, should be solved before its application. Based on the previous results that single cell with TiN/Ti as bipolar plates shows high performance and enough long-time durability, the progress on the stacks with TiN/Ti as bipolar plates is reported in this manuscript. Till now seldom report is focused on stacks because of the complicated processing technique, especially for that with TiN/Ti as bipolar plate. The flow field in the plate is punched from titanium deformation, and two plates are welded by laser welding to form one piece of bipolar plate. The adopted processing techniques for stacks with TiN/Ti as bipolar plate exhibit advantage and feasibility in industry. The power density by weight for the stack is as high as 1353 W kg −1 , although it still has space to be improved. Next work should be focused on the design of flow channel parameters and flow field type based on plastic deformation of metal materials. -- Highlights: ► The progress on the stacks with TiN/Ti as bipolar plates is reported. ► The adopted processing techniques exhibit feasibility in industry. ► The power density by weight for the stack is as high as 1353 W kg −1 .

  2. Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

    Science.gov (United States)

    Palumbo, F.; Pazos, S.; Aguirre, F.; Winter, R.; Krylov, I.; Eizenberg, M.

    2017-06-01

    The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution. At the present, he is a research staff of the National Council of Science and Technology (CONICET), working in the National Commission of Atomic Energy (CNEA) in Buenos Aires, Argentina, well embedded within international research collaboration. Since 2008, he is Professor at the National Technological University (UTN) in Buenos Aires, Argentina. Dr. Palumbo has received research fellowships from: Marie Curie Fellowship within the 7th European Community Framework Programme, Abdus Salam International Centre for Theoretical Physics (ICTP) Italy, National Council of Science and Technology (CONICET) Argentina, and Consiglio Nazionale delle Ricerche (CNR) Italy. He is also a frequent scientific visitor of academic institutions as IMM-CNR-Italy, Minatec Grenoble-France, the Autonomous University of Barcelona-Spain, and the Israel Institute of Technology-Technion. He has authored and co-authored more than 50 papers in international conferences and journals.

  3. Chapter 3: Exponential experiments on graphite-moderated lattices fuelled with near-natural uranium metal rods

    International Nuclear Information System (INIS)

    McCulloch, D.B.; Clarke, W.G.; Ashworth, F.P.O.; Hoskins, T.A.

    1963-01-01

    Exponential experiments have been carried out on graphite lattices fuelled by 1.2 in. diameter uranium metal rods at three near-natural U 235 compositions, 0.6 Co, 1.3 Co and 1.6 Co. The results, together with those already existing from earlier exponential or critical measurements on these and similar natural uranium rods, have been correlated with the theory of Syrett (1961) and also with the modified form of this theory given in Vol.1, Ch. 7. (author)

  4. Topological Quantum Phase Transitions in Two-Dimensional Hexagonal Lattice Bilayers

    Science.gov (United States)

    Zhai, Xuechao; Jin, Guojun

    2013-09-01

    Since the successful fabrication of graphene, two-dimensional hexagonal lattice structures have become a research hotspot in condensed matter physics. In this short review, we theoretically focus on discussing the possible realization of a topological insulator (TI) phase in systems of graphene bilayer (GBL) and boron nitride bilayer (BNBL), whose band structures can be experimentally modulated by an interlayer bias voltage. Under the bias, a band gap can be opened in AB-stacked GBL but is still closed in AA-stacked GBL and significantly reduced in AA- or AB-stacked BNBL. In the presence of spin-orbit couplings (SOCs), further demonstrations indicate whether the topological quantum phase transition can be realized strongly depends on the stacking orders and symmetries of structures. It is observed that a bulk band gap can be first closed and then reopened when the Rashba SOC increases for gated AB-stacked GBL or when the intrinsic SOC increases for gated AA-stacked BNBL. This gives a distinct signal for a topological quantum phase transition, which is further characterized by a jump of the ℤ2 topological invariant. At fixed SOCs, the TI phase can be well switched by the interlayer bias and the phase boundaries are precisely determined. For AA-stacked GBL and AB-stacked BNBL, no strong TI phase exists, regardless of the strength of the intrinsic or Rashba SOCs. At last, a brief overview is given on other two-dimensional hexagonal materials including silicene and molybdenum disulfide bilayers.

  5. Transient deformational properties of high temperature alloys used in solid oxide fuel cell stacks

    DEFF Research Database (Denmark)

    Tadesse Molla, Tesfaye; Kwok, Kawai; Frandsen, Henrik Lund

    2017-01-01

    Stresses and probability of failure during operation of solid oxide fuel cells (SOFCs) is affected by the deformational properties of the different components of the SOFC stack. Though the overall stress relaxes with time during steady state operation, large stresses would normally appear through...... to describe the high temperature inelastic deformational behaviors of Crofer 22 APU used for metallic interconnects in SOFC stacks.......Stresses and probability of failure during operation of solid oxide fuel cells (SOFCs) is affected by the deformational properties of the different components of the SOFC stack. Though the overall stress relaxes with time during steady state operation, large stresses would normally appear through...... transients in operation including temporary shut downs. These stresses are highly affected by the transient creep behavior of metallic components in the SOFC stack. This study investigates whether a variation of the so-called Chaboche's unified power law together with isotropic hardening can represent...

  6. Changes in the vibrational energies and interatomic spacings upon the formation of vacancies in the volume and in the cores of crystallite conjugation regions of polycrystalline transition metals with cubic lattices

    International Nuclear Information System (INIS)

    Klotsman, S.M.; Timofeev, A.N.

    2008-01-01

    Measured changes (ε vac ) i,j of vibrational energy on vacancies formation in i-fields (in volumes and nuclei of crystallite conjugation regions of polycrystalline metals (CCR-PM)): Cr, Mo, Ta, W, Cu, Ir are presented. Changes ε vol of vibrational energy of vacancy nearest environment formed in the metal volume, changes ε FCC of vibrational energy when vacancies formation in CCR nuclei of BCC- and FCC lattices transition metals are discussed. Measured changes ε FCC of vibrational energy, u FCC potential energy and determined sign of interatomic distances changes Δa FCC when formation of split vacancy in the FCC-lattice CCR-PM, changes ε BCC of vibrational energy, u BCC potential energy and determined sign of Δa BCC changes of interatomic distances when vacancies formation in the BCC-lattice CCR-PM are demonstrated. It is noted that the increase of interatomic distances when vacancies formation in the BCC-lattice CCR nucleus of transition metals is conditioned by the the appearance of vacancies alternative structure. Properties of CCR-PM nuclei are more sensitive to interatomic distances changes in the vacancies environment, than to changes of its nearest neighbours numbers [ru

  7. Model for lattice dynamics of hexagonal close packed metals

    Energy Technology Data Exchange (ETDEWEB)

    Singh, R K [Tata Inst. of Fundamental Research, Bombay (India); Kumar, S [Meerut Coll. (India). Dept. of Physics

    1977-11-19

    A lattice dynamical model, which satisfies the requirements of translational invariance as well as the static equilibrium of hexagonal close packed lattice, has been proposed and applied to study the phonon dispersion relations in magnesium. The results revealed by this model have been claimed to be better than earlier ones.

  8. Analysis and prediction of stacking sequences in intercalated lamellar vanadium phosphates

    Energy Technology Data Exchange (ETDEWEB)

    Gautier, Romain [Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS - Ecole Nationale Superieure de Chimie de Rennes (France); Centre Nationale de la Recherche Scientifique (CNRS), Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes (France); Fourre, Yoann; Furet, Eric; Gautier, Regis; Le Fur, Eric [Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS - Ecole Nationale Superieure de Chimie de Rennes (France)

    2015-04-15

    An approach is presented that enables the analysis and prediction of stacking sequences in intercalated lamellar vanadium phosphates. A comparison of previously reported vanadium phosphates reveals two modes of intercalation: (i) 3d transition metal ions intercalated between VOPO{sub 4} layers and (ii) alkali/alkaline earth metal ions between VOPO{sub 4}.H{sub 2}O layers. Both intercalations were investigated using DFT calculations in order to understand the relative shifts of the vanadium phosphate layers. These calculations in addition to an analysis of the stacking sequences in previously reported materials enable the prediction of the crystal structures of M{sub x}(VOPO{sub 4}).yH{sub 2}O (M = Cs{sup +}, Cd{sup 2+} and Sn{sup 2+}). Experimental realization and structural determination of Cd(VOPO{sub 4}){sub 2}.4H{sub 2}O by single-crystal X-ray diffraction confirmed the predicted stacking sequences. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Three-dimensional stacked structured ASIC devices and methods of fabrication thereof

    Science.gov (United States)

    Shinde, Subhash L.; Teifel, John; Flores, Richard S.; Jarecki Jr., Robert L.; Bauer, Todd

    2015-11-19

    A 3D stacked sASIC is provided that includes a plurality of 2D reconfigurable structured structured ASIC (sASIC) levels interconnected through hard-wired arrays of 3D vias. The 2D sASIC levels may contain logic, memory, analog functions, and device input/output pad circuitry. During fabrication, these 2D sASIC levels are stacked on top of each other and fused together with 3D metal vias. Such 3D vias may be fabricated as through-silicon vias (TSVs). They may connect to the back-side of the 2D sASIC level, or they may be connected to top metal pads on the front-side of the 2D sASIC level.

  10. Stacks of SPS Dipole Magnets

    CERN Multimedia

    1974-01-01

    Stacks of SPS Dipole Magnets ready for installation in the tunnel. The SPS uses a separated function lattice with dipoles for bending and quadrupoles for focusing. The 6.2 m long normal conducting dipoles are of H-type with coils that are bent-up at the ends. There are two types, B1 (total of 360) and B2 (384). Both are for a maximum field of 1.8 Tesla and have the same outer dimensions (450x800 mm2 vxh) but with different gaps (B1: 39x129 mm2, B2: 52x92 mm2) tailored to the beam size. The yoke, made of 1.5 mm thick laminations, consists of an upper and a lower half joined together in the median plane once the coils have been inserted.

  11. Simulations Of Transverse Stacking In The NSLS-II Booster

    International Nuclear Information System (INIS)

    Fliller, R. III; Shaftan, T.

    2011-01-01

    The NSLS-II injection system consists of a 200 MeV linac and a 3 GeV booster. The linac needs to deliver 15 nC in 80 - 150 bunches to the booster every minute to achieve current stability goals in the storage ring. This is a very stringent requirement that has not been demonstrated at an operating light source. We have developed a scheme to transversely stack two bunch trains in the NSLS-II booster in order to alleviate the charge requirements on the linac. This scheme has been outlined previously. In this paper we show particle tracking simulations of the tracking scheme. We show simulations of the booster ramp with a stacked beam for a variety of lattice errors and injected beam parameters. In all cases the performance of the proposed stacking method is sufficient to reduce the required charge from the linac. For this reason the injection system of the NSLS-II booster is being designed to include this feature. The NSLS-II injection system consists of a 200 MeV linac and a 3 GeV booster. The injectors must provide 7.5nC in bunch trains 80-150 bunches long every minute for top off operation of the storage ring. Top off then requires that the linac deliver 15nC of charge once losses in the injector chain are taken into consideration. This is a very stringent requirement that has not been demonstrated at an operating light source. For this reason we have developed a method to transversely stack two bunch trains in the booster while maintaining the charge transport efficiency. This stacking scheme has been discussed previously. In this paper we show the simulations of the booster ramp with a single bunch train in the booster. Then we give a brief overview of the stacking scheme. Following, we show the results of stacking two bunch trains in the booster with varying beam emittances and train separations. The behavior of the beam through the ramp is examined showing that it is possible to stack two bunch trains in the booster.

  12. Electrical and materials properties of AlN/ HfO{sub 2} high-k stack with a metal gate

    Energy Technology Data Exchange (ETDEWEB)

    Reid, Kimberly G. [Tokyo Electron U.S., 14338 FM 1826, Austin, TX 78737 (United States)], E-mail: kim@ireid.com; Dip, Anthony [Tokyo Electron U.S., 2400 Grove Blvd., Austin, TX 78747 (United States)], E-mail: anthony.dip@us.tel.com; Sasaki, Sadao [Tokyo Electron U.S. (United States)], E-mail: Sadao.sasaki@us.tel.com; Triyoso, Dina [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Dina.Triyoso@freescale.com; Samavedam, Sri [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Sri.Samavedam@freescale.com; Gilmer, David [SEMATECH 2706 Montopolis Drive, Austin, TX 78741 (United States)], E-mail: David.Gilmer@sematech.org; Gondran, Carolyn F.H. [Process Characterization Laboratory, ATDF/SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States)], E-mail: Carolyn.Gondran@atdf.com

    2009-02-27

    In this study, aluminum nitride (AlN) was grown by molecular layer deposition on HfO{sub 2} that had been deposited on 200 mm Si (100) substrates. The AlN was grown on HfO{sub 2} using sequential exposures of trimethyl-aluminum and ammonia (NH{sub 3}) in a batch vertical furnace. Excellent thickness uniformity on test wafers from the top of the furnace to the bottom of the furnace (across the furnace load) was obtained. The equivalent oxide thickness was 16.5-18.8 A for the AlN/HfO{sub 2} stack on patterned device wafers with a molybdenum oxynitride metal gate with leakage current densities from low 10{sup -5} to mid 10{sup -6} A/cm{sup 2} at threshold voltage minus one volt. There was no change in the work function with the AlN cap on HfO{sub 2} with the MoN metal gate, even with a 1000 deg. C anneal.

  13. Broadband and wide angle near-unity absorption in graphene-insulator-metal thin film stacks

    Science.gov (United States)

    Zhang, H. J.; Zheng, G. G.; Chen, Y. Y.; Xu, L. H.

    2018-05-01

    Broadband unity absorption in graphene-insulator-metal (GIM) structures is demonstrated in the visible (VIS) and near-infrared (NIR) spectra. The spectral characteristics possess broadband absorption peaks, by simply choosing a stack of GIM, while no nanofabrication steps and patterning are required, and thus can be easily fabricated to cover a large area. The electromagnetic (EM) waves can be entirely trapped and the absorption can be greatly enhanced are verified with the finite-difference time-domain (FDTD) and rigorous coupled wave analysis (RCWA) methods. The position and the number of the absorption peak can be totally controlled by adjusting the thickness of the insulator layer. The proposed absorber maintains high absorption (above 90%) for both transverse electric (TE) and transverse magnetic (TM) polarizations, and for angles of incidence up to 80°. This work opens up a promising approach to realize perfect absorption (PA) with ultra-thin film, which could implicate many potential applications in optical detection and optoelectronic devices.

  14. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} nano-stacks

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Zhang, David Wei; Jiang, Anquan; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

    2015-07-07

    Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

  15. Elastic and failure response of imperfect three-dimensional metallic lattices: the role of geometric defects induced by Selective Laser Melting

    Science.gov (United States)

    Liu, Lu; Kamm, Paul; García-Moreno, Francisco; Banhart, John; Pasini, Damiano

    2017-10-01

    This paper examines three-dimensional metallic lattices with regular octet and rhombicuboctahedron units fabricated with geometric imperfections via Selective Laser Sintering. We use X-ray computed tomography to capture morphology, location, and distribution of process-induced defects with the aim of studying their role in the elastic response, damage initiation, and failure evolution under quasi-static compression. Testing results from in-situ compression tomography show that each lattice exhibits a distinct failure mechanism that is governed not only by cell topology but also by geometric defects induced by additive manufacturing. Extracted from X-ray tomography images, the statistical distributions of three sets of defects, namely strut waviness, strut thickness variation, and strut oversizing, are used to develop numerical models of statistically representative lattices with imperfect geometry. Elastic and failure responses are predicted within 10% agreement from the experimental data. In addition, a computational study is presented to shed light into the relationship between the amplitude of selected defects and the reduction of elastic properties compared to their nominal values. The evolution of failure mechanisms is also explained with respect to strut oversizing, a parameter that can critically cause failure mode transitions that are not visible in defect-free lattices.

  16. Direct observation of the lattice precursor of the metal-to-insulator transition in V2O3 thin films by surface acoustic waves

    Science.gov (United States)

    Kündel, J.; Pontiller, P.; Müller, C.; Obermeier, G.; Liu, Z.; Nateprov, A. A.; Hörner, A.; Wixforth, A.; Horn, S.; Tidecks, R.

    2013-03-01

    A surface acoustic wave (SAW) delay line is used to study the metal-to-insulator (MI) transition of V2O3 thin films deposited on a piezoelectric LiNbO3 substrate. Effects contributing to the sound velocity shift of the SAW which are caused by elastic properties of the lattice of the V2O3 films when changing the temperature are separated from those originating from the electrical conductivity. For this purpose the electric field accompanying the elastic wave of the SAW has been shielded by growing the V2O3 film on a thin metallic Cr interlayer (coated with Cr2O3), covering the piezoelectric substrate. Thus, the recently discovered lattice precursor of the MI transition can be directly observed in the experiments, and its fine structure can be investigated.

  17. Probing Temperature Inside Planar SOFC Short Stack, Modules, and Stack Series

    Science.gov (United States)

    Yu, Rong; Guan, Wanbing; Zhou, Xiao-Dong

    2017-02-01

    Probing temperature inside a solid oxide fuel cell (SOFC) stack lies at the heart of the development of high-performance and stable SOFC systems. In this article, we report our recent work on the direct measurements of the temperature in three types of SOFC systems: a 5-cell short stack, a 30-cell stack module, and a stack series consisting of two 30-cell stack modules. The dependence of temperature on the gas flow rate and current density was studied under a current sweep or steady-state operation. During the current sweep, the temperature inside the 5-cell stack decreased with increasing current, while it increased significantly at the bottom and top of the 30-cell stack. During a steady-state operation, the temperature of the 5-cell stack was stable while it was increased in the 30-cell stack. In the stack series, the maximum temperature gradient reached 190°C when the gas was not preheated. If the gas was preheated and the temperature gradient was reduced to 23°C in the stack series with the presence of a preheating gas and segmented temperature control, this resulted in a low degradation rate.

  18. Spontaneous structural distortion of the metallic Shastry-Sutherland system Dy B4 by quadrupole-spin-lattice coupling

    Science.gov (United States)

    Sim, Hasung; Lee, Seongsu; Hong, Kun-Pyo; Jeong, Jaehong; Zhang, J. R.; Kamiyama, T.; Adroja, D. T.; Murray, C. A.; Thompson, S. P.; Iga, F.; Ji, S.; Khomskii, D.; Park, Je-Geun

    2016-11-01

    Dy B4 has a two-dimensional Shastry-Sutherland (Sh-S) lattice with strong Ising character of the Dy ions. Despite the intrinsic frustrations, it undergoes two successive transitions: a magnetic ordering at TN=20 K and a quadrupole ordering at TQ=12.5 K . From high-resolution neutron and synchrotron x-ray powder diffraction studies, we have obtained full structural information on this material in all phases and demonstrate that structural modifications occurring at quadrupolar transition lead to the lifting of frustrations inherent in the Sh-S model. Our paper thus provides a complete experimental picture of how the intrinsic frustration of the Sh-S lattice can be lifted by the coupling to quadrupole moments. We show that two other factors, i.e., strong spin-orbit coupling and long-range Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in metallic Dy B4 , play an important role in this behavior.

  19. Analysis of the effect of dissimilar welding in a high pressure flare stack

    International Nuclear Information System (INIS)

    Mahdi Ezwan Mahmoud; Mohd Harun; Zaifol Samsu; Norasiah Kasim; Zaiton Selamat; Alahuddin, K.H.

    2010-01-01

    A flare stack is an elevated vertical stack found in a natural gas processing plant, used primarily for combusting waste gases released by pressure relief valves. The materials used for our high pressure flare tip are carbon steel (CS) type A516 Gr. 55 for its lower portion, and stainless steel (SS) 310 for its upper portion. Both were combined into a single unit by arc welding (dissimilar welding), with SS310 as a base metal. After 5 years of operations, few mechanical deformations were observed on the flare stack, along with corrosion deposit on the CS portion of the flare. Detailed analysis shows the presence of toe and shrinkage cracks, along with spheroidization of pearlite in the CS. These are caused by factors such as mismatched welding and coefficient of thermal expansion (CTE) between the metals. These factors helped exacerbate crack initiation and propagation. Based on the evidence collected, it is recommended that the CS A516 be replaced with SS310. (author)

  20. Numerical study of natural convection in porous media (metals) using Lattice Boltzmann Method (LBM)

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, C.Y., E-mail: c.y.zhao@warwick.ac.u [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); School of Energy and Power Engineering, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Dai, L.N.; Tang, G.H.; Qu, Z.G.; Li, Z.Y. [School of Energy and Power Engineering, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China)

    2010-10-15

    A thermal lattice BGK model with doubled populations is proposed to simulate the two-dimensional natural convection flow in porous media (porous metals). The accuracy of this method is validated by the benchmark solutions. The detailed flow and heat transfer at the pore level are revealed. The effects of pore density (cell size) and porosity on the natural convection are examined. Also the effect of porous media configuration (shape) on natural convection is investigated. The results showed that the overall heat transfer will be enhanced by lowering the porosity and cell size. The square porous medium can have a higher heat transfer performance than spheres due to the strong flow mixing and more surface area.

  1. Thermal stress analysis of a planar SOFC stack

    Science.gov (United States)

    Lin, Chih-Kuang; Chen, Tsung-Ting; Chyou, Yau-Pin; Chiang, Lieh-Kwang

    The aim of this study is, by using finite element analysis (FEA), to characterize the thermal stress distribution in a planar solid oxide fuel cell (SOFC) stack during various stages. The temperature profiles generated by an integrated thermo-electrochemical model were applied to calculate the thermal stress distributions in a multiple-cell SOFC stack by using a three-dimensional (3D) FEA model. The constructed 3D FEA model consists of the complete components used in a practical SOFC stack, including positive electrode-electrolyte-negative electrode (PEN) assembly, interconnect, nickel mesh, and gas-tight glass-ceramic seals. Incorporation of the glass-ceramic sealant, which was never considered in previous studies, into the 3D FEA model would produce more realistic results in thermal stress analysis and enhance the reliability of predicting potential failure locations in an SOFC stack. The effects of stack support condition, viscous behavior of the glass-ceramic sealant, temperature gradient, and thermal expansion mismatch between components were characterized. Modeling results indicated that a change in the support condition at the bottom frame of the SOFC stack would not cause significant changes in thermal stress distribution. Thermal stress distribution did not differ significantly in each unit cell of the multiple-cell stack due to a comparable in-plane temperature profile. By considering the viscous characteristics of the glass-ceramic sealant at temperatures above the glass-transition temperature, relaxation of thermal stresses in the PEN was predicted. The thermal expansion behavior of the metallic interconnect/frame had a greater influence on the thermal stress distribution in the PEN than did that of the glass-ceramic sealant due to the domination of interconnect/frame in the volume of a planar SOFC assembly.

  2. Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

    Science.gov (United States)

    Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

    2018-06-01

    The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

  3. Synthesis of Stacked-Cup Carbon Nanotubes in a Metal Free Low Temperature System

    Science.gov (United States)

    Kimura, Yuki; Nuth, Joseph A.; Johnson, Natasha M.; Farmer, Kevin D.; Roberts, Kenneth P.; Hussaini, Syed R.

    2011-01-01

    Stacked-cup carbon nanotubes were formed by either Fischer-Tropsch type or Haber Bosch type reactions in a metal free system. Graphite particles were used as the catalyst. The samples were heated at 600 C in a gas mixture of CO 75 Torr, N2 75 Torr and H2 550 Torr for three days. Trans mission electron microscope analysis of the catalyst surface at the completion of the experiment recognized the growth of nanotubes. They were 10-50 nm in diameter and approximately 1 micrometer in length. They had a hollow channel of 5-20 nm in the center. The nanotubes may have grown on graphite surfaces by the CO disproportionation reaction and the surface tension of the carbon nucleus may have determined the diameter. Although, generally, the diameter of a carbon nanotube depends on the size of the cataly1ic particles, the diameter of the nanotubes on graphite particles was independent of the particle size and significantly confined within a narrow range compared with that produced using catalytic amorphous iron-silicate nanoparticles. Therefore, they must have an unknown formation process that is different than the generally accepted mechanism.

  4. Interaction of light with planar lattices of atoms: Reflection, transmission, and cooperative magnetometry

    Science.gov (United States)

    Facchinetti, G.; Ruostekoski, J.

    2018-02-01

    We study strong, light-mediated, resonant dipole-dipole interactions in two-dimensional planar lattices of cold atoms. We provide a detailed analysis for the description of the dipolar point emitter lattice plane as a "superatom" whose response is similar to electromagnetically induced transparency but which exhibits an ultranarrow collective size-dependent subradiant resonance linewidth. The superatom model provides intuitively simple descriptions for the spectral response of the array, including the complete reflection, full transmission, narrow Fano resonances, and asymptotic expressions for the resonance linewidths of the collective eigenmodes. We propose a protocol to transfer almost the entire radiative excitation to a single correlated subradiant eigenmode in a lattice and show that the medium obtained by stacked lattice arrays can form a cooperative magnetometer. Such a magnetometer utilizes similar principles as magnetometers based on the electromagnetically induced transparency. The accuracy of the cooperative magnetometer, however, is not limited by the single-atom resonance linewidth but the much narrower collective linewidth that results from the strong dipole-dipole interactions.

  5. A Dynamic Momentum Compaction Factor Lattice for Improvements to Stochastic Cooling in Storage Rings

    Energy Technology Data Exchange (ETDEWEB)

    Olivieri, David Nicholas [Massachusetts U., Amherst

    1996-01-01

    A dynamic momentum compaction factor, also referred to as a dynamic $\\Delta \\gamma \\tau$, lattice for the FNAL Antiproton Source Debuncher Storage Ring is studied, both theoretically and experimentally, for the purpose of improving stochastic precooling, and hence, improving the global antiproton production and stacking performance. A dynamic $\\Delta \\gamma \\tau$ lattice is proposed due to the competing requirements inherent within the Debuncher storage ring upon $\\gamma \\tau$· Specifically, the Debuncher storage ring performs two disparate functions, $(i)$ accepting and debunching a large number of $\\overline{p}$s/pulse at the outset of the production cycle, which would perform ideally with a large value of $\\gamma\\tau$, and $(ii)$ subsequently employing stochastic cooling throughout the remainder of the $\\overline{p}$ production cycle for improved transfer and stacking efficiency into the Accumulator, for which a small value $\\gamma \\tau$ is ideal in order to reduce the diffusive heating caused by the mixing factor. In the initial design of the Debuncher optical lattice, an intermediate value of $\\gamma \\tau$ was chosen as a compromise between the two functional requirements. The goal of the thesis is to improve stochastic precooling by changing $\\gamma \\tau$ between two desired values during each p production cycle. In particular, the dynamic $\\Delta \\gamma \\tau$ lattice accomplishes a reduction in $\\gamma \\tau$, and hence the mixing factor, through an uniform increase to the dispersion throughout the arc sections of the storage ring. Experimental measurements of cooling rates and system performance parameters, with the implementation of the dynamic $\\Delta \\gamma \\tau$ lattice, are in agreement with theoretical predictions based upon a detailed integration of the stochastic cooling Fokker Planck equations. Based upon the consistency between theory and experiment, predictions of cooling rates are presented for future operational

  6. A Molecular Dynamics Study of the Epitaxial Growth of Metallic Nanoclusters Softly Deposited on Substrates with Very Different Lattice Parameter

    International Nuclear Information System (INIS)

    Jimenez-Saez, J C; Perez-MartIn, A M C; Jimenez-RodrIguez, J J

    2007-01-01

    The soft deposition of Cu and Au clusters on Au(001) and Cu(001) surfaces respectively is studied by constant-temperature molecular-dynamics simulations. The initial shape of the nanoclusters is icosahedral or truncated octahedral (Wulff type). Their number of atoms ranges between 12 and 1289 atoms. Bombardment energy is of the order of a few meV/atom. The atomic interactions are mimicked by a many-body potential based on the tightbinding model. The effect of the temperature as activation to get the complete epitaxy is analysed. We have found that Cu clusters manage to align their {002} planes with the substrate by increasing the temperature. However, there is not epitaxial growth in any case since the lattice becomes bcc or important stacking faults are generated. For Au clusters, the alignment of these planes is practically independent of the temperature

  7. Annex I.G. Demolition of the G1 stack at Marcoule by toppling

    International Nuclear Information System (INIS)

    2005-01-01

    The G1 stack at Marcoule was constructed during the first half of 1956 as a ventilation outlet for the G1 reactor, which is cooled by air. After the G1 reactor was decommissioned, the G1 stack served as a ventilation outlet for two new nuclear facilities on the site. Being no longer in compliance with regulations and having many inadequacies and uncertainties in terms of the prestressed concrete, the stack posed a potential damage risk in extreme wind or in the event of an earthquake. In 1994 it was decided that a new stack would be built to act as an outlet for the existing nuclear facilities, and that the old one would be demolished. The G1 stack was 100 m in height, 10 m in diameter and constructed with 24 vertically stacked concrete rings consisting of nine prefabricated sections, each 3.6 m in height. It was capped by a metal deflector (about 6 m in height and weighing 50 t). The inside consisted of nine semicircular tubes constructed of steel sheet metal weighing 120 t. The base of the stack consisted of the foundation, a plate and a base plate which were constructed at the site. The barrel sections were prefabricated. Construction lasted from January 1956 to June 1956. At the base, the cylindrical portion of the stack widened to form three feet extending to a depth of 7.5 m. The base plate of the stack was formed onsite to the height of 16.7 m and then prestressed using cables. A repair carried out in 1964 included adding a concrete lining of the initial rings of the cylinder up to a level of 22.1 m. Additional prestressing with the base plate and repair of the horizontal and vertical prestressing of the barrel were also carried out, leaving only 22 rings and 43 visible cables. The total mass of the stack was 2170 t, including: - Concrete: cylinder 800 t, base plate 1200 t; - Steel: internal structures 120 t, deflector 50 t. The main radiological risk was the presence of traces of tritium. The radioactive inventory for the entire stack was estimated in 2000

  8. Anisotropic Born-Mayer potential in lattice dynamics of Vanadium

    International Nuclear Information System (INIS)

    Onwuagba, B.N.

    1988-01-01

    A microscopic theory of the lattice dynamics of the transition metal vanadium is developed based on the Animalu's transition metal model potential (TMMP). The Born-Mayer potential associated with the distribution of the transition metal d-electrons is treated as anisotropic. Good agreement with experimental phonon dispersion curves longitudinal branches in the [111] direction

  9. Ultrahigh capacitance density for multiple ALD-grown MIM capacitor stacks in 3-D silicon

    NARCIS (Netherlands)

    Klootwijk, J.H.; Jinesh, K.B.; Dekkers, W.; Verhoeven, J.F.C.; Heuvel, van den F.C.; Kim, H.-D.; Blin, D.; Verheijen, M.A.; Weemaes, R.G.R.; Kaiser, M.; Ruigrok, J.J.M.; Roozeboom, F.

    2008-01-01

    "Trench" capacitors containing multiple metal-insulator-metal (MIM) layer stacks are realized by atomic-layer deposition (ALD), yielding an ultrahigh capacitance density of 440 nF/mm2 at a breakdown voltage VBD > 6 V. This capacitance density on silicon is at least 10 times higher than the values

  10. Lattice Waves, Spin Waves, and Neutron Scattering

    Science.gov (United States)

    Brockhouse, Bertram N.

    1962-03-01

    Use of neutron inelastic scattering to study the forces between atoms in solids is treated. One-phonon processes and lattice vibrations are discussed, and experiments that verified the existence of the quantum of lattice vibrations, the phonon, are reviewed. Dispersion curves, phonon frequencies and absorption, and models for dispersion calculations are discussed. Experiments on the crystal dynamics of metals are examined. Dispersion curves are presented and analyzed; theory of lattice dynamics is considered; effects of Fermi surfaces on dispersion curves; electron-phonon interactions, electronic structure influence on lattice vibrations, and phonon lifetimes are explored. The dispersion relation of spin waves in crystals and experiments in which dispersion curves for spin waves in Co-Fe alloy and magnons in magnetite were obtained and the reality of the magnon was demonstrated are discussed. (D.C.W)

  11. An adaptive immune optimization algorithm with dynamic lattice searching operation for fast optimization of atomic clusters

    International Nuclear Information System (INIS)

    Wu, Xia; Wu, Genhua

    2014-01-01

    Highlights: • A high efficient method for optimization of atomic clusters is developed. • Its performance is studied by optimizing Lennard-Jones clusters and Ag clusters. • The method is proved to be quite efficient. • A new Ag 61 cluster with stacking-fault face-centered cubic motif is found. - Abstract: Geometrical optimization of atomic clusters is performed by a development of adaptive immune optimization algorithm (AIOA) with dynamic lattice searching (DLS) operation (AIOA-DLS method). By a cycle of construction and searching of the dynamic lattice (DL), DLS algorithm rapidly makes the clusters more regular and greatly reduces the potential energy. DLS can thus be used as an operation acting on the new individuals after mutation operation in AIOA to improve the performance of the AIOA. The AIOA-DLS method combines the merit of evolutionary algorithm and idea of dynamic lattice. The performance of the proposed method is investigated in the optimization of Lennard-Jones clusters within 250 atoms and silver clusters described by many-body Gupta potential within 150 atoms. Results reported in the literature are reproduced, and the motif of Ag 61 cluster is found to be stacking-fault face-centered cubic, whose energy is lower than that of previously obtained icosahedron

  12. Effect of pore architecture and stacking direction on mechanical properties of solid freeform fabrication-based scaffold for bone tissue engineering.

    Science.gov (United States)

    Lee, Jung-Seob; Cha, Hwang Do; Shim, Jin-Hyung; Jung, Jin Woo; Kim, Jong Young; Cho, Dong-Woo

    2012-07-01

    Fabrication of a three-dimensional (3D) scaffold with increased mechanical strength may be an essential requirement for more advanced bone tissue engineering scaffolds. Various material- and chemical-based approaches have been explored to enhance the mechanical properties of engineered bone tissue scaffolds. In this study, the effects of pore architecture and stacking direction on the mechanical and cell proliferation properties of a scaffold were investigated. The 3D scaffold was prepared using solid freeform fabrication technology with a multihead deposition system. Various types of scaffolds with different pore architectures (lattice, stagger, and triangle types) and stacking directions (horizontal and vertical directions) were fabricated with a blend of polycaprolactone and poly lactic-co-glycolic acid. In compression tests, the triangle-type scaffold was the strongest among the experimental groups. Stacking direction affected the mechanical properties of scaffolds. An in vitro cell counting kit-8 assay showed no significant differences in optical density depending on the different pore architectures and stacking directions. In conclusion, mechanical properties of scaffolds can be enhanced by controlling pore architecture and stacking direction. Copyright © 2012 Wiley Periodicals, Inc.

  13. Lattice location of transition metals in silicon by means of emission channeling

    CERN Document Server

    da Silva, Daniel José; Wahl, Ulrich; Correia, João Guilherme

    The behavior of transition metals (TMs) in silicon is a subject that has been studied extensively during the last six decades. Their unintentional introduction during the Si production, crystal growth and device manufacturing have made them difficult contaminants to avoid. Once in silicon they easily form deep levels, either when in the isolated form or when forming precipitates. One important effect is the reduction of efficiency of silicon-based devices, being dramatic, in particular, in photovoltaic applications. One way to avoid such effects is by engineering the location of the TM: some TM complexes or lattice sites of the isolated form do not introduce any level in the silicon bandgap. Which point defects lead to such passivation is still under debate. Another way is to mitigate the reduction of efficiency by reducing the dangling bonds of TMs with hydrogen. The most important and commonly used procedures to diminish the unwanted effects of the introduced deep levels are, nevertheless, based on the so-c...

  14. A model for the formation of lattice defects at silicon oxide precipitates in silicon

    International Nuclear Information System (INIS)

    Vanhellemont, J.; Gryse, O. de; Clauws, P.

    2003-01-01

    The critical size of silicon oxide precipitates and the formation of lattice defects by the precipitates are discussed. An expression is derived allowing estimation of self-interstitial emission by spherical precipitates as well as strain build-up during precipitate growth. The predictions are compared with published experimental data. A model for stacking fault nucleation at oxide precipitates is developed based on strain and self-interstitial accumulation during the thermal history of the wafer. During a low-temperature treatment high levels of strain develop. During subsequent high-temperature treatment, excess strain energy in the precipitate is released by self-interstitial emission leading to favourable conditions for stacking fault nucleation

  15. Atomic-scale details of dislocation-stacking fault tetrahedra interaction

    International Nuclear Information System (INIS)

    Osetsky, Yu. N.; Stoller, R.E.; Rodney, D.; Bacon, D.J.

    2005-01-01

    Stacking fault tetrahedra (SFTs) are formed during irradiation of f.c.c. metals and alloys with low stacking fault energy. The high number density of SFTs observed suggests that they should contribute to radiation-induced hardening and, therefore, be taken into account when estimating mechanical property changes of irradiated materials. Key issue is to describe the interaction between a moving dislocation and an individual SFT, which is characterized by a small physical scale of about 100 nm. In this paper we present results of an atomistic simulation of edge and screw dislocations interacting with small SFTs at different temperatures and strain rates and present mechanisms which can explain the formation of defect-free channels observed experimentally

  16. The behavior of hydrogen in metals

    International Nuclear Information System (INIS)

    Hirabayashi, Makoto

    1975-01-01

    Explanation is made on the equilibrium diagrams of metal-hydrogen systems and the state of hydrogen in metals. Some metals perform exothermic reaction with hydrogen, and the others endothermic reaction. The former form stable hydrides and solid solutions over a wide range of composition. Hydrogen atoms in fcc and bcc metals are present at the interstitial positions of tetrahedron lattice and octahedron lattice. For example, hydrogen atoms in palladium are present at the intersititial positions of octahedron. When the ratio of the composition of hydrogen and palladium is 1:1, the structure becomes NaCl type. Hydrogen atoms in niobium and vanadium and present interstitially in tetrahedron lattice. Metal hydrides with high hydrogen concentration are becoming important recently as the containers of hydrogen. Hydrogen atoms diffuse in metals quite easily. The activation energy of the diffusion of hydrogen atoms in Nb and V is about 2-3 kcal/g.atom. The diffusion coefficient is about 10 -5 cm 2 /sec in alpha phase at room temperature. The number of jumps of a hydrogen atom between neighboring lattice sites is 10 11 --10 12 times per second. This datum is almost the same as that of liquid metals. Discussion is also made on the electronic state of hydrogen in metals. (Fukutomi, T.)

  17. The Role of Lattice Vibrations in Adatom Diffusion at Metal Stepped Surfaces

    International Nuclear Information System (INIS)

    Durakanoglu, S.

    2004-01-01

    Diffusion of a single atom on metal surfaces remains a subject of continuing interest in the surface science community because of the important role it plays in several technologically important phenomena such as thin-film and eptaxial growth, catalysis and chemical reactions. Except for a few studies, most of theoretical works, ranging from molecular dynamic simulations to first principle electronic structure calculations, are devoted to determination of the characteristics of the diffusion processes and the energy barriers, neglecting the contribution of lattice vibrations in adatom diffusion. However, in a series of theoretical works on self-diffusion on the flat surfaces of Cu(100), Ag(100) and Ni(100), Ulrike et al.[1-3], showed that the vibrational contributions are important and should be included in any complete description of the temperature dependence of the diffusion coefficient. In this work, it is our aim to examine the role of lattice vibrations in adatom diffusion at stepped surfaces of Cu(100) and Ni(100) within the framework of transition state theory. Ehrlich-Shwoebel energy barriers for an adatom diffusing over a step-edge are calculated through the inclusion of vibrational internal energy. Local vibrational density of states, main ingredient to the vibrational thermodynamic functions, are calculated in the harmonic approximation, using real space Green's function method with the force constants derived from interaction potentials based on the embedded atom method. We emphasize the sensitivity of the local vibrational density of states to the local atomic environment. We, furthermore, discuss the contribution of thermodynamic functions calculated from local vibrational density of states to the prefactors in diffusion coefficient

  18. Supramolecular self-assembly of graphene oxide and metal nanoparticles into stacked multilayers by means of a multitasking protein ring.

    Science.gov (United States)

    Ardini, Matteo; Golia, Giordana; Passaretti, Paolo; Cimini, Annamaria; Pitari, Giuseppina; Giansanti, Francesco; Di Leandro, Luana; Ottaviano, Luca; Perrozzi, Francesco; Santucci, Sandro; Morandi, Vittorio; Ortolani, Luca; Christian, Meganne; Treossi, Emanuele; Palermo, Vincenzo; Angelucci, Francesco; Ippoliti, Rodolfo

    2016-03-28

    Graphene oxide (GO) is rapidly emerging worldwide as a breakthrough precursor material for next-generation devices. However, this requires the transition of its two-dimensional layered structure into more accessible three-dimensional (3D) arrays. Peroxiredoxins (Prx) are a family of multitasking redox enzymes, self-assembling into ring-like architectures. Taking advantage of both their symmetric structure and function, 3D reduced GO-based composites are hereby built up. Results reveal that the "double-faced" Prx rings can adhere flat on single GO layers and partially reduce them by their sulfur-containing amino acids, driving their stacking into 3D multi-layer reduced GO-Prx composites. This process occurs in aqueous solution at a very low GO concentration, i.e. 0.2 mg ml(-1). Further, protein engineering allows the Prx ring to be enriched with metal binding sites inside its lumen. This feature is exploited to both capture presynthesized gold nanoparticles and grow in situ palladium nanoparticles paving the way to straightforward and "green" routes to 3D reduced GO-metal composite materials.

  19. Electronic structure, lattice dynamics, and optical properties of a novel van der Waals semiconductor heterostructure: InGaSe2

    Science.gov (United States)

    Ibarra-Hernández, Wilfredo; Elsayed, Hannan; Romero, Aldo H.; Bautista-Hernández, Alejandro; Olguín, Daniel; Cantarero, Andrés

    2017-07-01

    There is a growing interest in the property dependence of transition metal dichalcogenides as a function of the number of layers and formation of heterostructures. Depending on the stacking, doping, edge effects, and interlayer distance, the properties can be modified, which opens the door to novel applications that require a detailed understanding of the atomic mechanisms responsible for those changes. In this work, we analyze the electronic properties and lattice dynamics of a heterostructure constructed by simultaneously stacking InSe layers and GaSe layers bounded by van der Waals forces. We have assumed the same space group of GaSe, P 6 ¯m 2 as it becomes the lower energy configuration for other considered stackings. The structural, vibrational, and optical properties of this layered compound have been calculated using density functional theory. The structure is shown to be energetically, thermally, and elastically stable, which indicates its possible chemical synthesis. A correlation of the theoretical physical properties with respect to its parent compounds is extensively discussed. One of the most interesting properties is the low thermal conductivity, which indicates its potential use in thermolectric applications. Additionally, we discuss the possibility of using electronic gap engineering methods, which can help us to tune the optical emission in a variable range close to that used in the field of biological systems (NIR). Finally, the importance of considering properly van der Waals dispersion in layered materials has been emphasized as included in the exchange correlation functional. As for the presence of atoms with important spin-orbit coupling, relativistic corrections have been included.

  20. Synthesis and structure of two-dimensional transition-metal dichalcogenides

    KAUST Repository

    Shi, Yumeng; Zhang, Hua; Chang, Wen-Hao; Shin, Hyeon Suk; Li, Lain-Jong

    2015-01-01

    Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) exhibit unique electrical, optical, thermal, and mechanical properties, which enable them to be used as building blocks in compact and lightweight integrated electronic systems. The controllable and reliable synthesis of atomically thin TMDCs is essential for their practical application. Recent progress in large-area synthesis of monolayer TMDCs paves the way for practical production of various 2D TMDC layers. The intrinsic optical and electrical properties of monolayer TMDCs can be defined by stoichiometry during synthesis. By manipulating the lattice structure or layer stacking manner, it is possible to create atomically thin van der Waals materials with unique and unexplored physical properties. In this article, we review recent developments in the synthesis of TMDC monolayers, alloys, and heterostructures, which shine light on the design of novel TMDCs with desired functional properties.

  1. Synthesis and structure of two-dimensional transition-metal dichalcogenides

    KAUST Repository

    Shi, Yumeng

    2015-07-13

    Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) exhibit unique electrical, optical, thermal, and mechanical properties, which enable them to be used as building blocks in compact and lightweight integrated electronic systems. The controllable and reliable synthesis of atomically thin TMDCs is essential for their practical application. Recent progress in large-area synthesis of monolayer TMDCs paves the way for practical production of various 2D TMDC layers. The intrinsic optical and electrical properties of monolayer TMDCs can be defined by stoichiometry during synthesis. By manipulating the lattice structure or layer stacking manner, it is possible to create atomically thin van der Waals materials with unique and unexplored physical properties. In this article, we review recent developments in the synthesis of TMDC monolayers, alloys, and heterostructures, which shine light on the design of novel TMDCs with desired functional properties.

  2. Stacking multiple connecting functional materials in tandem organic light-emitting diodes

    Science.gov (United States)

    Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

    2017-02-01

    Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

  3. A bird’s eye view on the flat and conic band world of the honeycomb and Kagome lattices: towards an understanding of 2D metal-organic frameworks electronic structure

    Science.gov (United States)

    Barreteau, C.; Ducastelle, F.; Mallah, T.

    2017-11-01

    We present a thorough tight-binding analysis of the band structure of a wide variety of lattices belonging to the class of honeycomb and Kagome systems including several mixed forms combining both lattices. The band structure of these systems are made of a combination of dispersive and flat bands. The dispersive bands possess Dirac cones (linear dispersion) at the six corners (K points) of the Brillouin zone although in peculiar cases Dirac cones at the center of the zone (Γ point) appear. The flat bands can be of different nature. Most of them are tangent to the dispersive bands at the center of the zone but some, for symmetry reasons, do not hybridize with other states. The objective of our work is to provide an analysis of a wide class of so-called ligand-decorated honeycomb Kagome lattices that are observed in a 2D metal-organic framework where the ligand occupy honeycomb sites and the metallic atoms the Kagome sites. We show that the p x -p y graphene model is relevant in these systems and there exists four types of flat bands: Kagome flat (singly degenerate) bands, two kinds of ligand-centered flat bands (A2 like and E like, respectively doubly and singly degenerate) and metal-centered (three fold degenerate) flat bands.

  4. Influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures and lattice defects accumulation

    Energy Technology Data Exchange (ETDEWEB)

    Sedao, Xxx; Garrelie, Florence, E-mail: florence.garrelie@univ-st-etienne.fr; Colombier, Jean-Philippe; Reynaud, Stéphanie; Pigeon, Florent [Université de Lyon, CNRS, UMR5516, Laboratoire Hubert Curien, Université de Saint Etienne, Jean Monnet, F-42023 Saint-Etienne (France); Maurice, Claire; Quey, Romain [Ecole Nationale Supérieure des Mines de Saint-Etienne, CNRS, UMR5307, Laboratoire Georges Friedel, F-42023 Saint-Etienne (France)

    2014-04-28

    The influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures (LIPSS) has been investigated on a polycrystalline nickel sample. Electron Backscatter Diffraction characterization has been exploited to provide structural information within the laser spot on irradiated samples to determine the dependence of LIPSS formation and lattice defects (stacking faults, twins, dislocations) upon the crystal orientation. Significant differences are observed at low-to-medium number of laser pulses, outstandingly for (111)-oriented surface which favors lattice defects formation rather than LIPSS formation.

  5. Exact matrix treatment of statistical mechanical lattice model of adsorption induced gate opening in metal-organic frameworks

    International Nuclear Information System (INIS)

    Dunne, Lawrence J; Manos, George

    2015-01-01

    Here we present a statistical mechanical lattice model which is exactly solvable using a matrix method and allows treatment of adsorption induced gate opening structural transformations of metal-organic frameworks which are nanoporous materials with exceptional adsorption properties. Modelling of these structural changes presents a serious theoretical challenge when the solid and gas species are treated in an even handed way. This exactly solvable model complements other simulation based approaches. The methodology presented here highlights the competition between the potential for adsorption and the energy required for structural transition as a driving force for the features in the adsorption isotherms. (paper)

  6. EmuStack: An OpenStack-Based DTN Network Emulation Platform (Extended Version

    Directory of Open Access Journals (Sweden)

    Haifeng Li

    2016-01-01

    Full Text Available With the advancement of computing and network virtualization technology, the networking research community shows great interest in network emulation. Compared with network simulation, network emulation can provide more relevant and comprehensive details. In this paper, EmuStack, a large-scale real-time emulation platform for Delay Tolerant Network (DTN, is proposed. EmuStack aims at empowering network emulation to become as simple as network simulation. Based on OpenStack, distributed synchronous emulation modules are developed to enable EmuStack to implement synchronous and dynamic, precise, and real-time network emulation. Meanwhile, the lightweight approach of using Docker container technology and network namespaces allows EmuStack to support a (up to hundreds of nodes large-scale topology with only several physical nodes. In addition, EmuStack integrates the Linux Traffic Control (TC tools with OpenStack for managing and emulating the virtual link characteristics which include variable bandwidth, delay, loss, jitter, reordering, and duplication. Finally, experiences with our initial implementation suggest the ability to run and debug experimental network protocol in real time. EmuStack environment would bring qualitative change in network research works.

  7. X-cube model on generic lattices: Fracton phases and geometric order

    Science.gov (United States)

    Slagle, Kevin; Kim, Yong Baek

    2018-04-01

    Fracton order is a new kind of quantum order characterized by topological excitations that exhibit remarkable mobility restrictions and a robust ground-state degeneracy (GSD) which can increase exponentially with system size. In this paper, we present a generic lattice construction (in three dimensions) for a generalized X-cube model of fracton order, where the mobility restrictions of the subdimensional particles inherit the geometry of the lattice. This helps explain a previous result that lattice curvature can produce a robust GSD, even on a manifold with trivial topology. We provide explicit examples to show that the (zero-temperature) phase of matter is sensitive to the lattice geometry. In one example, the lattice geometry confines the dimension-1 particles to small loops, which allows the fractons to be fully mobile charges, and the resulting phase is equivalent to (3+1)-dimensional toric code. However, the phase is sensitive to more than just lattice curvature; different lattices without curvature (e.g., cubic or stacked kagome lattices) also result in different phases of matter, which are separated by phase transitions. Unintuitively, however, according to a previous definition of phase [X. Chen et al., Phys. Rev. B 82, 155138 (2010), 10.1103/PhysRevB.82.155138], even just a rotated or rescaled cubic results in different phases of matter, which motivates us to propose a coarser definition of phase for gapped ground states and fracton order. This equivalence relation between ground states is given by the composition of a local unitary transformation and a quasi-isometry (which can rotate and rescale the lattice); equivalently, ground states are in the same phase if they can be adiabatically connected by varying both the Hamiltonian and the positions of the degrees of freedom (via a quasi-isometry). In light of the importance of geometry, we further propose that fracton orders should be regarded as a geometric order.

  8. Algebraic stacks

    Indian Academy of Sciences (India)

    Deligne, Mumford and Artin [DM, Ar2]) and consider algebraic stacks, then we can cons- truct the 'moduli ... the moduli scheme and the moduli stack of vector bundles. First I will give ... 1–31. © Printed in India. 1 ...... Cultura, Spain. References.

  9. StackGAN++: Realistic Image Synthesis with Stacked Generative Adversarial Networks

    OpenAIRE

    Zhang, Han; Xu, Tao; Li, Hongsheng; Zhang, Shaoting; Wang, Xiaogang; Huang, Xiaolei; Metaxas, Dimitris

    2017-01-01

    Although Generative Adversarial Networks (GANs) have shown remarkable success in various tasks, they still face challenges in generating high quality images. In this paper, we propose Stacked Generative Adversarial Networks (StackGAN) aiming at generating high-resolution photo-realistic images. First, we propose a two-stage generative adversarial network architecture, StackGAN-v1, for text-to-image synthesis. The Stage-I GAN sketches the primitive shape and colors of the object based on given...

  10. Displacive stability of a void in a void lattice

    International Nuclear Information System (INIS)

    Brailsford, A.D.

    1977-01-01

    It has recently been suggested that the stability of the void-lattice structure in irradiated metals may be attributed to the effect of the overlapping of the point-defect diffusion fields associated with each void. It is shown here, however, that the effect is much too weak. When one void is displaced from its lattice site, the displacement is shown to relax to zero as proposed, but a conservative estimate indicates that the characteristic time is equivalent to an irradiation dose of the order of 300 displacements per atom which is generally much greater than the dose necessary for void-lattice formation

  11. Electron-lattice Interaction and Nonlinear Excitations in Cuprate Structures

    International Nuclear Information System (INIS)

    Paulsen, J.; Eschrig, H.; Drechsler, S.L.; Malek, J.

    1995-01-01

    A low temperature lattice modulation of the chains of the YBa 2 Cu 3 O 7 is considered by deriving a Hamiltonian of electron-lattice interaction from density-functional calculations for deformed lattice and solving it for the groundstate. Hubbard-type Coulomb interaction is included. The obtained groundstate is a charge-density-wave state with a pereodicity of four lattice constants and a gap for one-electron excitations of about 1eV, sensitively depending on parameters of the Hamiltonian. There are lots of polaronic and solitonic excitations with formation energies deep in the gap, which can pin the Fermi level and thus produce again metallicity of the chain. They might also contribute to pairing of holes in adjacent CuO 2 -planes. (author)

  12. Revisiting the Fundamentals and Capabilities of the Stack Compression Test

    DEFF Research Database (Denmark)

    Alves, L.M.; Nielsen, Chris Valentin; Martin, P.A.F.

    2011-01-01

    performance by comparing the flow curves obtained from its utilisation with those determined by means of compressive testing carried out on solid cylinder specimens of the same material. Results show that mechanical testing of materials by means of the stack compression test is capable of meeting...... the increasing demand of accurate and reliable flow curves for sheet metals....

  13. Investigation of ultrafast lattice heating in thin (semi-)metal films using time-resolved electron diffraction; Untersuchung der schnellen Gitteraufheizung in duennen (Halb-)Metallfilmen mit Hilfe zeitaufgeloester Elektronenbeugung

    Energy Technology Data Exchange (ETDEWEB)

    Ligges, Manuel

    2009-07-21

    In the framework of the present thesis the fast lattice heating in thin metal and bismuth layers after optical short-pulse excitation was studied. By irradiation of ultrathin solid films with ultrashort (femtosecond) laser pulses for sort times an extreme nonequilibrium state occurs: The electronic system is strongly excited, while the lattice system remains cold. An energetic exchange between both systems follows, which is based on the electron-phonon interaction and leads to heating of the lattice system. This lattice heating can be observed by means of the Debye-Waller effect in the electron diffraction image. By means of the excitation-interrogation scheme by a series of moment records this lattice heating can be observed time-resolvedly. The experimentally determind time scales for this process permit conclusions on the electron-phonon coupling in the studied materials. In this thesis a time-resolving transmissi9on-electron diffraction experiment with sub-picosecond time resolution was constructed and optimized. By means of this experiment the fast lattice heating in thin gold, silver, copper, and bismuth films was studied. The observed heating behaviour of the metal films shows agreement with theoretical predictions of different model calculations. The results of the measurements on bismuth films show a hitherto not observed coupling behaviour. [German] Im Rahmen der vorliegenden Arbeit wurde die schnelle Gitteraufheizung in duennen Metall- und Wismutschichten nach optischer Kurzimpulsanregung untersucht. Durch Bestrahlung duenner Festkoerperfilme mit ultrakurzen (Femtosekunden-) Laserimpulsen entsteht fuer kurze Zeiten ein extremer Nichtgleichgewichtszustand: Das elektronische System wird stark angeregt, waehrend das Gittersystem kalt bleibt. Es folgt ein energetischer Austausch zwischen beiden Systemen, der auf der Elektron-Phonon-Wechselwirkung beruht und zur Aufheizung des Gittersystems fuehrt. Diese Gitteraufheizung kann anhand des Debye

  14. S/sub n/ analysis of the TRX metal lattices with ENDF/B version III data

    International Nuclear Information System (INIS)

    Wheeler, F.J.

    1975-01-01

    Two critical assemblies, designated as thermal-reactor benchmarks TRX-1 and TRX-2 for ENDF/B data testing, were analyzed using the one-dimensional S/sub n/-theory code SCAMP. The two assemblies were simple lattices of aluminum-clad, uranium-metal fuel rods in triangular arrays with D 2 O as moderator and reflector. The fuel was low-enriched (1.3 percent 235 U), 0.387-inch in diameter and had an active height of 48 inches. The volume ratio of water to uranium was 2.35 for the TRX-1 lattice and 4.02 for TRX-2. Full-core S/sub n/ calculations based on Version III data were performed for these assemblies and the results obtained were compared with the measured values of the multiplication factors, the ratio of epithermal-to-thermal neutron capture in 238 U, the ratio of epithermal-to-thermal fission in 235 U, the ratio of 238 U fission to 235 U fission, and the ratio of capture in 238 U to fission in 235 U. Reaction rates were obtained from a central region of the full-core problems. Multigroup cross sections for the reactor calculation were obtained from S/sub n/ cell calculations with resonance self-shielding calculated using the RABBLE treatment. The results of the analyses are generally consistent with results obtained by other investigators

  15. L1{sub 0} stacked binaries as candidates for hard-magnets. FePt, MnAl and MnGa

    Energy Technology Data Exchange (ETDEWEB)

    Matsushita, Yu-ichiro [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Applied Physics, The University of Tokyo (Japan); Madjarova, Galia [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physical Chemistry, Faculty of Chemistry and Pharmacy, Sofia University (Bulgaria); Flores-Livas, Jose A. [Department of Physics, Universitaet Basel (Switzerland); Dewhurst, J.K.; Gross, E.K.U. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Felser, C. [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Sharma, S. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physics, Indian Institute of Technology, Roorkee, Uttarkhand (India)

    2017-08-15

    We present a novel approach for designing new hard magnets by forming stacks of existing binary magnets to enhance the magneto crystalline anisotropy. This is followed by an attempt at reducing the amount of expensive metal in these stacks by replacing it with cheaper metal with similar ionic radius. This strategy is explored using examples of FePt, MnAl and MnGa. In this study a few promising materials are suggested as good candidates for hard magnets: stacked binary FePt{sub 2}MnGa{sub 2} in structure where each magnetic layer is separated by two non-magnetic layers, FePtMnGa and FePtMnAl in hexagonally distorted Heusler structures and FePt{sub 0.5}Ti{sub 0.5}MnAl. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Stable biexcitons in two-dimensional metal-halide perovskites with strong dynamic lattice disorder

    Science.gov (United States)

    Thouin, Félix; Neutzner, Stefanie; Cortecchia, Daniele; Dragomir, Vlad Alexandru; Soci, Cesare; Salim, Teddy; Lam, Yeng Ming; Leonelli, Richard; Petrozza, Annamaria; Kandada, Ajay Ram Srimath; Silva, Carlos

    2018-03-01

    With strongly bound and stable excitons at room temperature, single-layer, two-dimensional organic-inorganic hybrid perovskites are viable semiconductors for light-emitting quantum optoelectronics applications. In such a technological context, it is imperative to comprehensively explore all the factors—chemical, electronic, and structural—that govern strong multiexciton correlations. Here, by means of two-dimensional coherent spectroscopy, we examine excitonic many-body effects in pure, single-layer (PEA) 2PbI4 (PEA = phenylethylammonium). We determine the binding energy of biexcitons—correlated two-electron, two-hole quasiparticles—to be 44 ±5 meV at room temperature. The extraordinarily high values are similar to those reported in other strongly excitonic two-dimensional materials such as transition-metal dichalcogenides. Importantly, we show that this binding energy increases by ˜25 % upon cooling to 5 K. Our work highlights the importance of multiexciton correlations in this class of technologically promising, solution-processable materials, in spite of the strong effects of lattice fluctuations and dynamic disorder.

  17. Applicability of X-ray fluorescence spectroscopy as method to determine thickness and composition of stacks of metal thin films: A comparison with imaging and profilometry

    International Nuclear Information System (INIS)

    Vrielink, J.A.M.; Tiggelaar, R.M.; Gardeniers, J.G.E.; Lefferts, L.

    2012-01-01

    In this work the applicability of X-ray fluorescence spectroscopy (XRF) for fast, accurate and non-destructive determination of the thickness of a variety of single-layer and multi-layer metal thin films deposited on glass and silicon is investigated. Data obtained with XRF is compared with information from profilometry and images from scanning electron microscopy (SEM). Whereas thickness determinations based on profilometry and cross-sectional SEM-imaging have restrictions with respect to thickness of metal stacks or hardness of the metals, XRF has no such limitations. Moreover, XRF can discriminate between sublayers in a multi-layer film, and can also be utilized for compositional analysis and density estimations. Good agreement between thickness data obtained with XRF, profilometry and SEM-images is found, under the justifiable assumption that the density of sputter-deposited and evaporated thin films is ca. 5% below that of bulk metals. Similar XRF-results are found for non-patterned areas (64 mm 2 metal) as well as lithographically patterned areas containing a series of small metal lines (total metal surface ca. 8 mm 2 ). As a consequence, it is concluded that XRF is a versatile technique for analysis, verification, control or evaluation of the thickness, density or (elemental) composition of thin metal film line-patterns, during their fabrication as well as prior or post to applications.

  18. Investigation of lattice defects and compositional gradients in Cu(In,Ga)Se{sub 2} thin films for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Jens; Boit, Christian [Department of Semiconductor Devices, Berlin University of Technology, Einsteinufer 19, 10587 Berlin (Germany); Abou-Ras, Daniel; Rissom, Thorsten; Unold, Thomas; Schock, Hans-Werner [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2011-07-01

    Cu(In,Ga)Se{sub 2} absorber layers used in thin-film solar cells exhibit, when grown in a multi-stage process, compositional gradients of gallium and indium, dependent on process parameters such as the Ga content. The high lateral resolution of transmission electron microscopy (TEM) imaging and energy-dispersive X-ray spectroscopy (EDX) allows the determination of lattice defects and the elemental concentrations at identical sample positions. Cross-sectional TEM samples of ZnO/CdS/Cu(In,Ga)Se{sub 2}/Mo/glass stacks were prepared with varying [Ga]/([In]+[Ga]) ratio in the absorber. The shape of the Ga distribution was measured by means of EDX and differs for the various [Ga]/([In]+[Ga]) ratios. Linear (dislocations) and planar defects (stacking faults, microtwins) were studied by means of TEM bright field and dark field images along the lengths of the Cu(In,Ga)Se{sub 2} layers. Strong Ga compositional gradients were found even within individual grains. It appears that these Ga gradients correlate with the occurrence of dislocation networks in large grains (diameter > 1 {mu}m). We assume that these dislocations compensate for lattice mismatch due to the change in composition in this area of the lattice.

  19. OpenStack cloud security

    CERN Document Server

    Locati, Fabio Alessandro

    2015-01-01

    If you are an OpenStack administrator or developer, or wish to build solutions to protect your OpenStack environment, then this book is for you. Experience of Linux administration and familiarity with different OpenStack components is assumed.

  20. Local field corrections in the lattice dynamics of chromium | Ndukwe ...

    African Journals Online (AJOL)

    This work extends the inclusion of local field corrections in the calculation of the phonon dispersion curves to the transition metal, chromium (Cr3+) using the formalism of lattice dynamics based on the transition metal model potential approach in the adiabatic and hatmonic approximations. The results obtained here have a ...

  1. Study of the tunneling effect within lattices with cubic structure on varying temperature

    International Nuclear Information System (INIS)

    Frisone, F.

    2008-01-01

    In this theoretical study, it is underlined that the presence of micro-cracks in the lattice structure increases the probability of tunneling effect between two deuterons by some orders of magnitude with respect to non-deformed lattices. We have derived an expression to compute the tunneling probability within a micro-crack, and hypothesized a D + 2 -D + 2 binding mechanism. Finally, the overall indications provided by these theoretical simulations appear to suggest that the deformation of the crystalline lattice, at varying temperature, seems able to influence the process of tunneling between the deuterons in the metal, while the forced loading with D 2 has, in general, no evident positive effects in pure metals, but in some cases could, on the contrary, condition the phenomenon negatively. (authors)

  2. Layanan Infrastruktur Komputasi Multitenant dengan OpenStack di Lingkungan MaaS

    Directory of Open Access Journals (Sweden)

    Joan Ricard Panggabean

    2017-10-01

    Full Text Available The growth of high-quality computing needs triggers the development of infrastructure that requires huge costs and resources. This research applied OpenStack in Metal as a Service (MaaS environment to provide multitenant infrastructure services in the form of virtual machines (IaaS. The capacity of this IaaS system can be configured based on the needs of the computing resources (CPUs, memory, storage, and network interfaces. Users within the tenant can request infrastructure services as their needs without requiring human interaction with each service provider. Meningkatnya kebutuhan komputasi berkualitas tinggi mendorong pengembangan infrastruktur server yang membutuhkan biaya dan sumber daya besar. Penelitian ini mengaplikasikan OpenStack dalam lingkungan Metal as a Service (MaaS untuk menyediakan layanan infrastruktur multitenant berupa mesin-mesin virtual sebagai Infrastructure as a Service (IaaS. Kapasitas sistem layanan IaaS ini dapat dikonfigurasi berdasarkan kebutuhan sumber daya komputasi (CPU, memori, ruang penyimpan, dan antarmuka jaringan. Pengguna dalam tenant dapat meminta layanan infrastruktur secara mandiri dengan kapasitas komputasi sesuai yang dibutuhkan.

  3. Initiation and Performance of a Coating for Countering Chromium Poisoning in a SOFC-stack

    DEFF Research Database (Denmark)

    Nielsen, Karsten Agersted; Persson, Åsa Helen; Beeaff, Dustin

    2007-01-01

    Minimising transport of chromium from the metallic interconnect (e.g. of Crofer 22APU) to the cathode in a planar solid oxide fuel cell is done by application of a coating between the two parts. The coating is applied by slurry coating, and taken through stack initialisation it transforms...... into a stable and densely grown barrier layer, which minimises both the evaporation of chromium from the interconnect surface and the electrical contact resistance between the interconnect and the cathode. Between comparable stack element tests with and without coatings at 750 degrees C, the degradation rate...

  4. Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack

    International Nuclear Information System (INIS)

    Park, Woojin; Yang, Jin Ho; Kang, Chang Goo; Lee, Young Gon; Hwang, Hyeon Jun; Kang, Soo Cheol; Lee, Sang Kyung; Lee, Byoung Hun; Cho, Chunhum; Lim, Sung Kwan; Lee, Sangchul; Hong, Woong-Ki

    2013-01-01

    A new touch sensor device has been demonstrated with molybdenum disulfide (MoS 2 ) field effect transistors stacked with a piezoelectric polymer, polyvinylidene fluoride–trifluoroethylene (PVDF–TrFE). The performance of two device stack structures, metal/PVDF–TrFE/MoS 2 (MPM) and metal/PVDF–TrFE/Al 2 O 3 /MoS 2 (MPAM), were compared as a function of the thickness of PVDF–TrFE and Al 2 O 3 . The sensitivity of the touch sensor has been improved by two orders of magnitude by reducing the charge scattering and enhancing the passivation effects using a thin Al 2 O 3 interfacial layer. Reliable switching behavior has been demonstrated up to 120 touch press cycles. (paper)

  5. Controlling the shapes and sizes of metallic nanoantennas for detection of biological molecules using hybridization phase of plasmon resonances and photonic lattice modes

    Science.gov (United States)

    Gutha, Rithvik R.; Sharp, Christina; Wing, Waylin J.; Sadeghi, Seyed M.

    2018-02-01

    Chemical sensing based on Localized Surface Plasmonic Resonances (LSPR) and the ultra-sharp optical features of surface lattice resonances (SLR) of arrays of metallic nanoantennas have attracted much attention. Recently we studied biosensing based on the transition between LSPR and SLR (hybridization phase), demonstrating significantly higher refractive index sensitivity than each of these resonances individually. In this contribution we study the impact of size and shape of the metallic nanoantennas on the hybridization process and the way they influence application of this process for biosensing, wherein miniscule variation of the refractive index of the environment leads to dramatic changes in the spectral properties of the arrays.

  6. Nature of Interlayer Binding and Stacking of sp–sp 2 Hybridized Carbon Layers: A Quantum Monte Carlo Study

    International Nuclear Information System (INIS)

    Shin, Hyeondeok; Lee, Hoonkyung; Heinonen, Olle; Benali, Anouar; Kwon, Yongkyung

    2017-01-01

    α-graphyne is a two-dimensional sheet of sp-sp2 hybridized carbon atoms in a honeycomb lattice. While the geometrical structure is similar to that of graphene, the hybridized triple bonds give rise to electronic structure that is different from that of graphene. Similar to graphene, α-graphyne can be stacked in bilayers with two stable configurations, but the different stackings have very different electronic structures: one is predicted to have gapless parabolic bands and the other a tunable bandgap which is attractive for applications. In order to realize applications, it is crucial to understand which stacking is more stable. This is difficult to model, as the stability is a result of weak interlayer van der Waals interactions which are not well captured by density functional theory (DFT). We have used quantum Monte Carlo simulations that accurately include van der Waals interactions to calculate the interlayer binding energy of bilayer graphyne and to determine its most stable stacking mode. Our results show that inter-layer bindings of sp- and sp2-bonded carbon networks are significantly underestimated in a Kohn-Sham DFT approach, even with an exchange-correlation potential corrected to include, in some approximation, van der Waals interactions. Finally, our quantum Monte Carlo calculations reveal that the interlayer binding energy difference between the two stacking modes is only 0.9(4) eV/atom. From this we conclude that the two stable stacking modes of bilayer α-graphyne are almost degenerate with each other, and both will occur with about the same probability at room temperature unless there is a synthesis path that prefers one stacking over the other.

  7. Charge-lattice interplay in layered cobaltates RBaCo2O5+x

    Science.gov (United States)

    Lavrov, A. N.; Kameneva, M. Yu.; Kozeeva, L. P.; Zhdanov, K. R.

    2017-10-01

    X-ray diffraction, electrical resistivity and thermal expansion measurements are used to study the interrelation between the structural, magnetic and electron-transport peculiarities in RBaCo2O5+x (R=Y, Gd) over a wide range of oxygen contents. We find that the anisotropic lattice strain caused by the oxygen chain ordering in these compounds favors the metallic state and is a necessary condition for the coupled insulator-to-metal and spin-state phase transitions to occur. The obtained data point to the key role of the crystal lattice in selecting the preferred spin and orbital states of cobalt ions.

  8. Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming

    Energy Technology Data Exchange (ETDEWEB)

    Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2009-11-15

    To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

  9. The impact of stack geometry and mean pressure on cold end temperature of stack in thermoacoustic refrigeration systems

    Science.gov (United States)

    Wantha, Channarong

    2018-02-01

    This paper reports on the experimental and simulation studies of the influence of stack geometries and different mean pressures on the cold end temperature of the stack in the thermoacoustic refrigeration system. The stack geometry was tested, including spiral stack, circular pore stack and pin array stack. The results of this study show that the mean pressure of the gas in the system has a significant impact on the cold end temperature of the stack. The mean pressure of the gas in the system corresponds to thermal penetration depth, which results in a better cold end temperature of the stack. The results also show that the cold end temperature of the pin array stack decreases more than that of the spiral stack and circular pore stack geometry by approximately 63% and 70%, respectively. In addition, the thermal area and viscous area of the stack are analyzed to explain the results of such temperatures of thermoacoustic stacks.

  10. OpenStack essentials

    CERN Document Server

    Radez, Dan

    2015-01-01

    If you need to get started with OpenStack or want to learn more, then this book is your perfect companion. If you're comfortable with the Linux command line, you'll gain confidence in using OpenStack.

  11. Hexagonal perovskites with cationic vacancies. 15. Ba/sub 9/Nb/sub 6/Wvacant/sub 2/O/sub 27/ - the first perovskite stacking polytype of rhombohedral 27 L-type

    Energy Technology Data Exchange (ETDEWEB)

    Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.). Lehrstuhl fuer Anorganische Chemie 2

    1980-02-01

    The perovskite stacking polytype Ba/sub 9/Nb/sub 6/sup(V)Wsup(VI)vacant/sub 2/O/sub 27/ (white) is the first representative of a rhombohedral 27 L-type. The lattice parameters (trigonal setting) are: a = 5.79/sub 3/ A; c = 63.4/sub 1/ A; Z = 3 (rhosub(exp) = 6.4/sub 6/ g/cm/sup 3/; rhosub(calc) = 6.51/sub 2/ g/cm/sup 3/). The corresponding Tasup(V)-compound is isotypic; it tends to develop stacking faults.

  12. Non-destructive spatial characterization of buried interfaces in multilayer stacks via two color picosecond acoustics

    Science.gov (United States)

    Faria, Jorge C. D.; Garnier, Philippe; Devos, Arnaud

    2017-12-01

    We demonstrate the ability to construct wide-area spatial mappings of buried interfaces in thin film stacks in a non-destructive manner using two color picosecond acoustics. Along with the extraction of layer thicknesses and sound velocities from acoustic signals, the morphological information presented is a powerful demonstration of phonon imaging as a metrological tool. For a series of heterogeneous (polymer, metal, and semiconductor) thin film stacks that have been treated with a chemical procedure known to alter layer properties, the spatial mappings reveal changes to interior thicknesses and chemically modified surface features without the need to remove uppermost layers. These results compare well to atomic force microscopy scans showing that the technique provides a significant advantage to current characterization methods for industrially important device stacks.

  13. Nano-structured noble metal catalysts based on hexametallate architecture for the reforming of hydrocarbon fuels

    Science.gov (United States)

    Gardner, Todd H.

    2015-09-15

    Nano-structured noble metal catalysts based on hexametallate lattices, of a spinel block type, and which are resistant to carbon deposition and metal sulfide formation are provided. The catalysts are designed for the reforming of hydrocarbon fuels to synthesis gas. The hexametallate lattices are doped with noble metals (Au, Pt, Rh, Ru) which are atomically dispersed as isolated sites throughout the lattice and take the place of hexametallate metal ions such as Cr, Ga, In, and/or Nb. Mirror cations in the crystal lattice are selected from alkali metals, alkaline earth metals, and the lanthanide metals, so as to reduce the acidity of the catalyst crystal lattice and enhance the desorption of carbon deposit forming moieties such as aromatics. The catalysts can be used at temperatures as high as 1000.degree. C. and pressures up to 30 atmospheres. A method for producing these catalysts and applications of their use also is provided.

  14. Stacking effect on the ferroelectric properties of PZT/PLZT multilayer thin films formed by photochemical metal-organic deposition

    International Nuclear Information System (INIS)

    Park, Hyeong-Ho; Park, Hyung-Ho; Hill, Ross H.

    2004-01-01

    The ferroelectric properties of lead zirconate titanate (PZT) and lanthanum-doped lead zirconate titanate (PLZT) multilayer films formed by photochemical metal-organic deposition (PMOD) using photosensitive precursors have been characterized. The substitution of La for Pb was reported to induce improved ferroelectric properties, especially fatigue resistance, through the reduction of oxygen vacancies. The relation between La-substitution and the ferroelectric properties was investigated by characterization of the effect of the order of stacking four ferroelectric layers of PZT or PLZT in the multilayer films 4-PZT, PZT/2-PLZT/PZT, PLZT/2-PZT/PLZT, and 4-PLZT. The films with the PLZT layer at the top and bottom showed an improvement in the fatigue resistance. It was revealed that defect dipole such as O vacancy was reduced at the ferroelectric/Pt interface by doping with La. Also, the bottom layer, just on Pt substrate had a significant influence on the surface microstructure and growth orientation of ferroelectric film

  15. A Novel Kind of Transverse Micro-Stack High-Power Diode Bars

    International Nuclear Information System (INIS)

    Lei, Zhang; Bi-Feng, Cui; Jian-Jun, Li; Wei-Lling, Guo; Zhi-Qun, Wang; Guang-Di, Shen

    2008-01-01

    Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large optical cavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60W under 50A driving current and the slope efficiency reaches 1.55W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transverse strongly coupled devices

  16. UV light induced insulator-metal transition in ultra-thin ZnO/TiO{sub x} stacked layer grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2016-08-28

    In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality

  17. Exact Calculation of the Thermodynamics of Biomacromolecules on Cubic Recursive Lattice.

    Science.gov (United States)

    Huang, Ran

    The thermodynamics of biomacromolecules featured as foldable polymer with inner-linkage of hydrogen bonds, e. g. protein, RNA and DNA, play an impressive role in either physical, biological, and polymer sciences. By treating the foldable chains to be the two-tolerate self-avoiding trails (2T polymer), abstract lattice modeling of these complex polymer systems to approach their thermodynamics and subsequent bio-functional properties have been developed for decades. Among these works, the calculations modeled on Bethe and Husimi lattice have shown the excellence of being exactly solvable. Our project extended this effort into the 3D situation, i.e. the cubic recursive lattice. The preliminary exploration basically confirmed others' previous findings on the planar structure, that we have three phases in the grand-canonical phase diagram, with a 1st order transition between non-polymerized and polymer phases, and a 2nd order transition between two distinguishable polymer phases. However the hydrogen bond energy J, stacking energy ɛ, and chain rigidity energy H play more vigorous effects on the thermal behaviors, and this is hypothesized to be due to the larger number of possible configurations provided by the complicated 3D model. By the so far progress, the calculation of biomacromolecules may be applied onto more complex recursive lattices, such as the inhomogeneous lattice to describe the cross-dimensional situations, and beside the thermal properties of the 2T polymers, we may infer some interesting insights of the mysterious folding problem itself. National Natural Science Foundation of China.

  18. Flat-on ambipolar triphenylamine/C60 nano-stacks formed from the self-organization of a pyramid-sphere-shaped amphiphile.

    Science.gov (United States)

    Liang, Wei-Wei; Huang, Chi-Feng; Wu, Kuan-Yi; Wu, San-Lien; Chang, Shu-Ting; Cheng, Yen-Ju; Wang, Chien-Lung

    2016-04-21

    A giant amphiphile, which is constructed with an amorphous nano-pyramid (triphenylamine, TPA) and a crystalline nano-sphere (C 60 ), was synthesized. Structural characterization indicates that this pyramid-sphere-shaped amphiphile ( TPA-C 60 ) forms a solvent-induced ordered phase, in which the two constituent units self-assemble into alternating stacks of two-dimensional (2D) TPA and C 60 nano-sheets. Due to the complexity of the molecular structure and the amorphous nature of the nano-pyramid, phase formation was driven by intermolecular C 60 -C 60 interactions and the ordered phase could not be reformed from the TPA-C 60 melt. Oriented crystal arrays of TPA-C 60 , which contain flat-on TPA/C 60 nano-stacks, can be obtained via a PDMS-assisted crystallization (PAC) technique. The flat-on dual-channel supramolecular structure of TPA-C 60 delivered ambipolar and balanced charge-transport characteristics with an average μ e of 2.11 × 10 -4 cm 2 V -1 s -1 and μ h of 3.37 × 10 -4 cm 2 V -1 s -1 . The anisotropic charge-transport ability of the pyramid-sphere-shaped amphiphile was further understood based on the lattice structure and the lattice orientation of TPA-C 60 revealed from electron diffraction analyses.

  19. Self-organized lattice of ordered quantum dot molecules

    International Nuclear Information System (INIS)

    Lippen, T. von; Noetzel, R.; Hamhuis, G.J.; Wolter, J.H.

    2004-01-01

    Ordered groups of InAs quantum dots (QDs), lateral QD molecules, are created by self-organized anisotropic strain engineering of a (In,Ga)As/GaAs superlattice (SL) template on GaAs (311)B in molecular-beam epitaxy. During stacking, the SL template self-organizes into a two-dimensionally ordered strain modulated network on a mesoscopic length scale. InAs QDs preferentially grow on top of the nodes of the network due to local strain recognition. The QDs form a lattice of separated groups of closely spaced ordered QDs whose number can be controlled by the GaAs separation layer thickness on top of the SL template. The QD groups exhibit excellent optical properties up to room temperature

  20. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

    International Nuclear Information System (INIS)

    Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

    2007-01-01

    Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

  1. Music Preference, Depression, Suicidal Preoccupation, and Personality: Comment on Stack and Gundlach's Papers.

    Science.gov (United States)

    Lester, David; Whipple, Melissa

    1996-01-01

    In a sample of students (n=93), preference for country and western music was not associated with depression or suicidal preoccupation as has been suggested by Stack and Gundlach. However, preference for heavy metal music was associated with prior suicidal ideation. Stronger associations were found between music preferences and measures of…

  2. Modeling fuel cell stack systems

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J H [Los Alamos National Lab., Los Alamos, NM (United States); Lalk, T R [Dept. of Mech. Eng., Texas A and M Univ., College Station, TX (United States)

    1998-06-15

    A technique for modeling fuel cell stacks is presented along with the results from an investigation designed to test the validity of the technique. The technique was specifically designed so that models developed using it can be used to determine the fundamental thermal-physical behavior of a fuel cell stack for any operating and design configuration. Such models would be useful tools for investigating fuel cell power system parameters. The modeling technique can be applied to any type of fuel cell stack for which performance data is available for a laboratory scale single cell. Use of the technique is demonstrated by generating sample results for a model of a Proton Exchange Membrane Fuel Cell (PEMFC) stack consisting of 125 cells each with an active area of 150 cm{sup 2}. A PEMFC stack was also used in the verification investigation. This stack consisted of four cells, each with an active area of 50 cm{sup 2}. Results from the verification investigation indicate that models developed using the technique are capable of accurately predicting fuel cell stack performance. (orig.)

  3. A long-term stable power supply µDMFC stack for wireless sensor node applications

    International Nuclear Information System (INIS)

    Wu, Zonglin; Wang, Xiaohong; Li, Xiaozhao; Xu, Manqi; Liu, Litian

    2014-01-01

    In this paper, a passive, air-breathing four-cell micro direct methanol fuel cell (µDMFC) stack featuring a fuel delivery structure for long-term and stable power supply is designed, fabricated and tested. The fuel is reserved in a T-shaped tank and diffuses through the porous diffusion layer to the catalyst at the anode. A peak power density of 25.7 mW cm −2 and a maximum power output of 113 mW are achieved with 3 M methanol at room temperature, and the stack can produce 60 mW of power, even though only 5% fuel remains in the reservoir. Combined with a low-input dc–dc convertor, the stack can realize a stable and optional constant voltage output from 1 V–6 V. The stack successfully powered a heavy metal sensor node for water environment monitoring 12 d continuously, with consumption of 10 mL 5 M methanol solution. As such, it is believed to be applicable for powering wireless sensor nodes. (paper)

  4. On Traveling Waves in Lattices: The Case of Riccati Lattices

    Science.gov (United States)

    Dimitrova, Zlatinka

    2012-09-01

    The method of simplest equation is applied for analysis of a class of lattices described by differential-difference equations that admit traveling-wave solutions constructed on the basis of the solution of the Riccati equation. We denote such lattices as Riccati lattices. We search for Riccati lattices within two classes of lattices: generalized Lotka-Volterra lattices and generalized Holling lattices. We show that from the class of generalized Lotka-Volterra lattices only the Wadati lattice belongs to the class of Riccati lattices. Opposite to this many lattices from the Holling class are Riccati lattices. We construct exact traveling wave solutions on the basis of the solution of Riccati equation for three members of the class of generalized Holling lattices.

  5. Generalized-stacking-fault energy and twin-boundary energy of hexagonal close-packed Au: A first-principles calculation.

    Science.gov (United States)

    Wang, Cheng; Wang, Huiyuan; Huang, Tianlong; Xue, Xuena; Qiu, Feng; Jiang, Qichuan

    2015-05-22

    Although solid Au is usually most stable as a face-centered cubic (fcc) structure, pure hexagonal close-packed (hcp) Au has been successfully fabricated recently. However, the phase stability and mechanical property of this new material are unclear, which may restrict its further applications. Here we present the evidence that hcp → fcc phase transformation can proceed easily in Au by first-principles calculations. The extremely low generalized-stacking-fault (GSF) energy in the basal slip system implies a great tendency to form basal stacking faults, which opens the door to phase transformation from hcp to fcc. Moreover, the Au lattice extends slightly within the superficial layers due to the self-assembly of alkanethiolate species on hcp Au (0001) surface, which may also contribute to the hcp → fcc phase transformation. Compared with hcp Mg, the GSF energies for non-basal slip systems and the twin-boundary (TB) energies for and twins are larger in hcp Au, which indicates the more difficulty in generating non-basal stacking faults and twins. The findings provide new insights for understanding the nature of the hcp → fcc phase transformation and guide the experiments of fabricating and developing materials with new structures.

  6. Microfabrication process for patterning metallic lithium encapsulated electrodes

    International Nuclear Information System (INIS)

    Oukassi, Sami; Dunoyer, Nicolas; Salot, Raphael; Martin, Steve

    2009-01-01

    This work presents recent achievements concerning thin film encapsulation of metallic lithium negative electrode. In the context of this study, the encapsulation stack includes polymer and dielectric layers combined in such way to optimize barrier performances of the whole structure towards oxygen and water vapor permeation. The first part of this work is dedicated to the description of the barrier stack architecture and properties. A second part presents the application of a microfabrication process to the metallic lithium negative electrode and barrier stack so as to have very small features (100 μm x 100 μm patterns). The microfabrication process includes several steps of photolithography and etching (dry and wet) blocks, which allows us to reach the target critical dimensions. These results show a method of patterning functional metallic lithium. It demonstrates the feasibility of energy sources miniaturization which is an important issue in the field of autonomous and wireless sensor networks.

  7. LATTICE: an interactive lattice computer code

    International Nuclear Information System (INIS)

    Staples, J.

    1976-10-01

    LATTICE is a computer code which enables an interactive user to calculate the functions of a synchrotron lattice. This program satisfies the requirements at LBL for a simple interactive lattice program by borrowing ideas from both TRANSPORT and SYNCH. A fitting routine is included

  8. Novel elastic, lattice dynamics and thermodynamic properties of metallic single-layer transition metal phosphides: 2H-M 2P (Mo2P, W2P, Nb2P and Ta2P)

    Science.gov (United States)

    Yin, Jiuren; Wu, Bozhao; Wang, Yanggang; Li, Zhimi; Yao, Yuanpeng; Jiang, Yong; Ding, Yanhuai; Xu, Fu; Zhang, Ping

    2018-04-01

    Recently, there has been a surge of interest in the research of two-dimensional (2D) phosphides due to their unique physical properties and wide applications. Transition metal phosphides 2H-M 2Ps (Mo2P, W2P, Nb2P and Ta2P) show considerable catalytic activity and energy storage potential. However, the electronic structure and mechanical properties of 2D 2H-M 2Ps are still unrevealed. Here, first-principles calculations are employed to investigate the lattice dynamics, elasticity and thermodynamic properties of 2H-M 2Ps. Results show that M 2Ps with lower stiffness exhibit remarkable lateral deformation under unidirectional loads. Due to the largest average Grüneisen parameter, single-layer Nb2P has the strongest anharmonic vibrations, resulting in the highest thermal expansion coefficient. The lattice thermal conductivities of Ta2P, W2P and Nb2P contradict classical theory, which would predict a smaller thermal conductivity due to the much heavier atom mass. Moreover, the calculations also demonstrate that the thermal conductivity of Ta2P is the highest as well as the lowest thermal expansion, owing to its weak anharmonic phonon scattering and the lowest average Grüneisen parameter. The insight provided by this study may be useful for future experimental and theoretical studies concerning 2D transition metal phosphide materials.

  9. Fabrication and Characterization of CZTS Thin Films Prepared by the Sulfurization of RF-Sputtered Stacked Metal Precursors

    Science.gov (United States)

    Abusnina, Mohamed; Moutinho, Helio; Al-Jassim, Mowafak; DeHart, Clay; Matin, Mohammed

    2014-09-01

    In this work, Cu2ZnSnS4 (CZTS) thin films were prepared by the sulfurization of metal precursors deposited sequentially via radio frequency magnetron sputtering on Mo-coated soda-lime glass. The stack order of the precursors was Mo/Zn/Sn/Cu. Sputtered precursors were annealed in sulfur atmosphere with nine different conditions to study the impact of sulfurization time and substrate temperature on the structural, morphological, and optical properties of the final CZTS films. X-ray fluorescence was used to determine the elemental composition ratio of the metal precursors. Final CZTS films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS). XRD and EDS were combined to investigate the films' structure and to identify the presence of secondary phases. XRD analysis indicated an improvement in film crystallinity with an increase of the substrate temperature and annealing times. Also indicated was the minimization and/or elimination of secondary phases when the films experienced longer annealing time. EDS revealed slight Sn loss in films sulfurized at 550°C; however, an increase of the sulfurization temperature to 600°C did not confirm these results. SEM study showed that films treated with higher temperatures exhibited dense morphology, indicating the completion of the sulfurization process. The estimated absorption coefficient was on the order of 104 cm-1 for all CZTS films, and the values obtained for the optical bandgap energy of the films were between 1.33 eV and 1.52 eV.

  10. Stacking faults of {gamma}{prime}{prime} phase precipitated in a Ni-15Cr-8Fe-6Nb alloy; Ni-15Cr-8Fe-6Nb gokin ni sekishutsusuru {gamma}{prime}{prime} sonai no sekiso kekkan

    Energy Technology Data Exchange (ETDEWEB)

    Kusabiraki, K; Ikeuchi, S [Toyama University, Toyama (Japan). Faculty of Engineering

    1995-09-01

    The stacking faults of a metastable {gamma}{prime}{prime} phase precipitated in a nickel-base superalloy, a modified NCF 3 type alloy (X-750M) were investigated by transmission electron microscopy and X-ray diffraction method. The {gamma}{prime}{prime} precipitates are circular shaped plates at the early stage of aging and they become elliptic or irregular shaped plates at the latter stage of aging up to 1033K. Contrast which suggests the existence of stacking faults on {l_brace}112{r_brace}{sub {gamma}{prime}{prime}} planes can be seen in many of large {gamma}{prime}{prime} precipitates extracted from the specimens aged at 1033K. It is clear that the values of {gamma}{prime}{prime}/{gamma} lattice mismatch increase with increasing the aging time from the measurement of lattice constants of the {gamma} and the {gamma}{prime}{prime} phase. The formation of stacking faults on {l_brace}112{r_brace}{sub {gamma}{prime}{prime}} in the large {gamma}{prime}{prime} precipitates is due to the movement of an a/6 [111] partial dislocation introduced by {gamma}{prime}{prime} /{gamma} coherency strain. Since a part of stacking sequence has a similar crystal structure to that of a stable {delta} phase precipitates in {gamma} phase, the formation of stacking faults in the {gamma}{prime}{prime} precipitates is considered to be favorable for the stabilization of them. 14 refs., 10 figs., 1 tab.

  11. Influence of stacking fault energies on the size distribution and character of defect clusters formed by collision cascades in face-centered cubic metals

    Directory of Open Access Journals (Sweden)

    Y. Yang

    2016-12-01

    Full Text Available Molecular dynamics simulations are performed to evaluate the influence of the stacking fault energy (SFE as a single variable parameter on defect formation by collision cascades in face-centered cubic metals. The simulations are performed for energies of a primary knock-on atom (EPKA up to 50keV at 100K by using six sets of the recently developed embedded atom method–type potentials. Neither the number of residual defects nor their clustering behavior is found to be affected by the SFE, except for the mean size of the vacancy clusters at EPKA=50keV. The mean size increases as the SFE decreases because of the enhanced formation of large vacancy clusters, which prefer to have stacking faults inside them. On the other hand, the ratio of glissile self-interstitial atom (SIA clusters decreases as the SFE increases. At higher SFEs, both the number of Frank loops and number of perfect loops tend to decrease; instead, three-dimensional irregular clusters with higher densities appear, most of which are sessile. The effect of SFE on the number of Frank loops becomes apparent only at a high EPKA of 50keV, where comparably large SIA clusters can be formed with a higher density.

  12. Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils.

    Science.gov (United States)

    Kim, Hyeryun; Ohta, Jitsuo; Ueno, Kohei; Kobayashi, Atsushi; Morita, Mari; Tokumoto, Yuki; Fujioka, Hiroshi

    2017-05-18

    GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it involves epitaxial growth of GaN by metal-organic chemical vapor deposition (MOCVD) on single crystalline sapphire wafers. If a low-cost epitaxial growth process such as sputtering on a metal foil can be used, it will be possible to fabricate large-area and flexible GaN-based light-emitting displays. Here we report preparation of GaN films on nearly lattice-matched flexible Hf foils using pulsed sputtering deposition (PSD) and demonstrate feasibility of fabricating full-color GaN-based LEDs. It was found that introduction of low-temperature (LT) grown layers suppressed the interfacial reaction between GaN and Hf, allowing the growth of high-quality GaN films on Hf foils. We fabricated blue, green, and red LEDs on Hf foils and confirmed their normal operation. The present results indicate that GaN films on Hf foils have potential applications in fabrication of future large-area flexible GaN-based optoelectronics.

  13. Hillock Formation, Metal Lifting and Voiding of an AlCu Metallization due to Temperature Treatment

    International Nuclear Information System (INIS)

    Foerster, J.; Schuderer, B.; Haeuser, M.; Kallensee, O.; Gross, Th.

    2004-01-01

    A metalstack with a layer composition of Ti/TiN/AlCu/TiN was evaluated in an AlCu metallization. Reliability results show a higher electromigration lifetime compared to a Ti/AlCu/Ti/TiN stack. During the metallization process flow large elevations were seen by optical inspection. Analysis by SEM cross sections showed different deviations. A metal lifting with void formation as consequence was found in large aluminum areas above tungsten plugs. Also voiding in the passivated Metal 2 and the unpassivated Metal 3 with a cracked anti-reflective coating as a result of the expansion of the aluminum was seen. The influence of processes with high thermal budget on the stress behaviour of the new metalstack was investigated. The final annealing was found as the process with the most critical influence. This study shows the influence of different final annealing temperatures on hillock formation and voiding using a Ti/TiN/AlCu/TiN metalstack. A reduction of the maximum temperature of the final annealing process is necessary for using the new AlCu metallization stack. The use of a surface treatment before deposition showed an optimization of the adhesion

  14. Shear response of Σ3{112} twin boundaries in face-centered-cubic metals

    Science.gov (United States)

    Wang, J.; Misra, A.; Hirth, J. P.

    2011-02-01

    Molecular statics and dynamics simulations were used to study the mechanisms of sliding and migration of Σ3{112} incoherent twin boundaries (ITBs) under applied shear acting in the boundary in the face-centered-cubic (fcc) metals, Ag, Cu, Pd, and Al, of varying stacking fault energies. These studies revealed that (i) ITBs can dissociate into two phase boundaries (PBs), bounding the hexagonal 9R phase, that contain different arrays of partial dislocations; (ii) the separation distance between the two PBs scales inversely with increasing stacking fault energy; (iii) for fcc metals with low stacking fault energy, one of the two PBs migrates through the collective glide of partials, referred to as the phase-boundary-migration (PBM) mechanism; (iv) for metals with high stacking energy, ITBs experience a coupled motion (migration and sliding) through the glide of interface disconnections, referred to as the interface-disconnection-glide (IDG) mechanism.

  15. X-ray diffraction study of stacking faults in a single crystal of 2H SiC

    International Nuclear Information System (INIS)

    Pandey, D.; Krishna, P.

    1977-01-01

    The nature of random stacking faults in a heavily disordered single crystal of 2H SiC has been investigated by studying the broadening of x-ray diffraction maxima. The intensity distribution along the 10.1 reciprocal lattice row was recorded on a four-circle, computer-controlled single crystal diffractometer. The 10.1 reflections with 1 even were found to be considerably broadened showing that the stacking faults present are predominantly intrinsic faults ( both growth and deformation faults). A careful study of the half-width values of different 10.1 reflections revealed that the fault probabilities are large. Exact expressions for the diffracted intensity and the observable diffraction effects were obtained and these were then used to calculate the deformation and growth fault probabilities which were found to be 0.20 and 0.11 respectively. It is suggested that several deformation fault configurations result from a clustering of growth faults. The results obtained are compared with those obtained for 2H ZnS crystals. (author)

  16. Mastering OpenStack

    CERN Document Server

    Khedher, Omar

    2015-01-01

    This book is intended for system administrators, cloud engineers, and system architects who want to deploy a cloud based on OpenStack in a mid- to large-sized IT infrastructure. If you have a fundamental understanding of cloud computing and OpenStack and want to expand your knowledge, then this book is an excellent checkpoint to move forward.

  17. Solid Oxide Fuel Cell Stack Diagnostics

    DEFF Research Database (Denmark)

    Mosbæk, Rasmus Rode; Barfod, Rasmus Gottrup

    As SOFC technology is moving closer to a commercial break through, methods to measure the “state-of-health” of operating stacks are becoming of increasing interest. This requires application of advanced methods for detailed electrical and electrochemical characterization during operation....... An operating stack is subject to compositional gradients in the gaseous reactant streams, and temperature gradients across each cell and across the stack, which complicates detailed analysis. Several experimental stacks from Topsoe Fuel Cell A/S were characterized using Electrochemical Impedance Spectroscopy...... in the hydrogen fuel gas supplied to the stack. EIS was used to examine the long-term behavior and monitor the evolution of the impedance of each of the repeating units and the whole stack. The observed impedance was analyzed in detail for one of the repeating units and the whole stack and the losses reported...

  18. Characterizing edge and stacking structures of exfoliated graphene by photoelectron diffraction

    International Nuclear Information System (INIS)

    Matsui, Fumihiko; Ishii, Ryo; Matsuda, Hiroyuki; Morita, Makoto; Kitagawa, Satoshi; Koh, Shinji; Daimon, Hiroshi; Matsushita, Tomohiro

    2013-01-01

    The two-dimensional C 1s photoelectron intensity angular distributions (PIADs) and spectra of exfoliated graphene flakes and crystalline graphite were measured using a focused soft X-ray beam. Suitable graphene samples were selected by thickness characterization using Raman spectromicroscopy after transferring mechanically exfoliated graphene flakes onto a 90-nm-thick SiO 2 film. In every PIAD, a Kagomé interference pattern was observed, particularly clearly in the monolayer graphene PIAD. Its origin is the overlap of the diffraction rings formed by an in-plane C-C bond honeycomb lattice. Thus, the crystal orientation of each sample can be determined. In the case of bilayer graphene, PIAD was threefold-symmetric, while those of monolayer graphene and crystalline graphite were sixfold-symmetric. This is due to the stacking structure of bilayer graphene. From comparisons with the multiple scattering PIAD simulation results, the way of layer stacking as well as the termination types in the edge regions of bilayer graphene flakes were determined. Furthermore, two different C 1s core levels corresponding to the top and bottom layers of bilayer graphene were identified. A chemical shift to a higher binding energy by 0.25 eV for the bottom layer was attributed to interfacial interactions. (author)

  19. ooi: OpenStack OCCI interface

    Directory of Open Access Journals (Sweden)

    Álvaro López García

    2016-01-01

    Full Text Available In this document we present an implementation of the Open Grid Forum’s Open Cloud Computing Interface (OCCI for OpenStack, namely ooi (Openstack occi interface, 2015  [1]. OCCI is an open standard for management tasks over cloud resources, focused on interoperability, portability and integration. ooi aims to implement this open interface for the OpenStack cloud middleware, promoting interoperability with other OCCI-enabled cloud management frameworks and infrastructures. ooi focuses on being non-invasive with a vanilla OpenStack installation, not tied to a particular OpenStack release version.

  20. ooi: OpenStack OCCI interface

    Science.gov (United States)

    López García, Álvaro; Fernández del Castillo, Enol; Orviz Fernández, Pablo

    In this document we present an implementation of the Open Grid Forum's Open Cloud Computing Interface (OCCI) for OpenStack, namely ooi (Openstack occi interface, 2015) [1]. OCCI is an open standard for management tasks over cloud resources, focused on interoperability, portability and integration. ooi aims to implement this open interface for the OpenStack cloud middleware, promoting interoperability with other OCCI-enabled cloud management frameworks and infrastructures. ooi focuses on being non-invasive with a vanilla OpenStack installation, not tied to a particular OpenStack release version.

  1. Stacked optical antennas for plasmon propagation in a 5 nm-confined cavity

    KAUST Repository

    Saeed, A.; Panaro, S.; Zaccaria, R. Proietti; Raja, W.; Liberale, Carlo; Dipalo, M.; Messina, G. C.; Wang, H.; De Angelis, F.; Toma, A.

    2015-01-01

    The sub-wavelength concentration and propagation of electromagnetic energy are two complementary aspects of plasmonics that are not necessarily co-present in a single nanosystem. Here we exploit the strong nanofocusing properties of stacked optical antennas in order to highly concentrate the electromagnetic energy into a 5nm metal-insulator-metal (MIM) cavity and convert free radiation into guided modes. The proposed nano-architecture combines the concentration properties of optical nanoantennas with the propagation capability of MIM systems, paving the way to highly miniaturized on-chip plasmonic waveguiding. © 2015, Nature Publishing Group. All rights reserved.

  2. Stacked optical antennas for plasmon propagation in a 5 nm-confined cavity

    KAUST Repository

    Saeed, A.

    2015-06-09

    The sub-wavelength concentration and propagation of electromagnetic energy are two complementary aspects of plasmonics that are not necessarily co-present in a single nanosystem. Here we exploit the strong nanofocusing properties of stacked optical antennas in order to highly concentrate the electromagnetic energy into a 5nm metal-insulator-metal (MIM) cavity and convert free radiation into guided modes. The proposed nano-architecture combines the concentration properties of optical nanoantennas with the propagation capability of MIM systems, paving the way to highly miniaturized on-chip plasmonic waveguiding. © 2015, Nature Publishing Group. All rights reserved.

  3. Agnostic stacking of intergalactic doublet absorption: measuring the Ne VIII population

    Science.gov (United States)

    Frank, Stephan; Pieri, Matthew M.; Mathur, Smita; Danforth, Charles W.; Shull, J. Michael

    2018-05-01

    We present a blind search for doublet intergalactic metal absorption with a method dubbed `agnostic stacking'. Using a forward-modelling framework, we combine this with direct detections in the literature to measure the overall metal population. We apply this novel approach to the search for Ne VIII absorption in a set of 26 high-quality COS spectra. We probe to an unprecedented low limit of log N>12.3 at 0.47≤z ≤1.34 over a path-length Δz = 7.36. This method selects apparent absorption without requiring knowledge of its source. Stacking this mixed population dilutes doublet features in composite spectra in a deterministic manner, allowing us to measure the proportion corresponding to Ne VIII absorption. We stack potential Ne VIII absorption in two regimes: absorption too weak to be significant in direct line studies (12.3 13.7). We do not detect Ne VIII absorption in either regime. Combining our measurements with direct detections, we find that the Ne VIII population is reproduced with a power-law column density distribution function with slope β = -1.86 ^{+0.18 }_{ -0.26} and normalization log f_{13.7} = -13.99 ^{+0.20 }_{ -0.23}, leading to an incidence rate of strong Ne VIII absorbers dn/dz =1.38 ^{+0.97 }_{ -0.82}. We infer a cosmic mass density for Ne VIII gas with 12.3 value significantly lower that than predicted by recent simulations. We translate this density into an estimate of the baryon density Ωb ≈ 1.8 × 10-3, constituting 4 per cent of the total baryonic mass.

  4. The lattice distortion effect for zinc-blende CrAs and CrSb

    International Nuclear Information System (INIS)

    Yamana, Keita; Geshi, Masaaki; Tsukamoto, Hidekazu; Uchida, Ichiro; Shirai, Masafumi; Kusakabe, Koichi; Suzuki, Naoshi

    2004-01-01

    We investigated the stability of the ferromagnetism of CrAs and CrSb in the zinc-blende structure against the lattice distortion, systematically. A calculation within the generalized gradient approximation using a full potential linearized augmented plane wave method was performed. We compared the ferromagnetic state and the antiferromagnetic state assuming tetragonal distortion with the lattice constants a and c changing independently and determined the spin polarization ratio in the ferromagnetic phase. The result shows that complete spin polarization (half-metallic ferromagnetism) remains stable even in the presence of large tetragonal distortion. On the other hand, our calculation shows that two monolayers of CrAs is enough to produce a half-metallic state in the CrAs/GaAs multilayer. Thus, the present result suggests that the half-metallic nature persists in various atomic-scale superlattices made of distorted CrAs or CrSb

  5. Stack gas treatment

    Science.gov (United States)

    Reeves, Adam A.

    1977-04-12

    Hot stack gases transfer contained heat to a gravity flow of pebbles treated with a catalyst, cooled stacked gases and a sulfuric acid mist is withdrawn from the unit, and heat picked up by the pebbles is transferred to air for combustion or other process. The sulfuric acid (or sulfur, depending on the catalyst) is withdrawn in a recovery unit.

  6. Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

    International Nuclear Information System (INIS)

    Capriotti, M.; Fleury, C.; Oposich, M.; Bethge, O.; Strasser, G.; Pogany, D.; Lagger, P.; Ostermaier, C.

    2015-01-01

    We provide theoretical and simulation analysis of the small signal response of SiO 2 /AlGaN/GaN metal insulator semiconductor (MIS) capacitors from depletion to spill over region, where the AlGaN/SiO 2 interface is accumulated with free electrons. A lumped element model of the gate stack, including the response of traps at the III-N/dielectric interface, is proposed and represented in terms of equivalent parallel capacitance, C p , and conductance, G p . C p -voltage and G p -voltage dependences are modelled taking into account bias dependent AlGaN barrier dynamic resistance R br and the effective channel resistance. In particular, in the spill-over region, the drop of C p with the frequency increase can be explained even without taking into account the response of interface traps, solely by considering the intrinsic response of the gate stack (i.e., no trap effects) and the decrease of R br with the applied forward bias. Furthermore, we show the limitations of the conductance method for the evaluation of the density of interface traps, D it , from the G p /ω vs. angular frequency ω curves. A peak in G p /ω vs. ω occurs even without traps, merely due to the intrinsic frequency response of gate stack. Moreover, the amplitude of the G p /ω vs. ω peak saturates at high D it , which can lead to underestimation of D it . Understanding the complex interplay between the intrinsic gate stack response and the effect of interface traps is relevant for the development of normally on and normally off MIS high electron mobility transistors with stable threshold voltage

  7. A Time-predictable Stack Cache

    DEFF Research Database (Denmark)

    Abbaspour, Sahar; Brandner, Florian; Schoeberl, Martin

    2013-01-01

    Real-time systems need time-predictable architectures to support static worst-case execution time (WCET) analysis. One architectural feature, the data cache, is hard to analyze when different data areas (e.g., heap allocated and stack allocated data) share the same cache. This sharing leads to le...... of a cache for stack allocated data. Our port of the LLVM C++ compiler supports the management of the stack cache. The combination of stack cache instructions and the hardware implementation of the stack cache is a further step towards timepredictable architectures.......Real-time systems need time-predictable architectures to support static worst-case execution time (WCET) analysis. One architectural feature, the data cache, is hard to analyze when different data areas (e.g., heap allocated and stack allocated data) share the same cache. This sharing leads to less...... precise results of the cache analysis part of the WCET analysis. Splitting the data cache for different data areas enables composable data cache analysis. The WCET analysis tool can analyze the accesses to these different data areas independently. In this paper we present the design and implementation...

  8. Continued SOFC cell and stack technology and improved production methods

    Energy Technology Data Exchange (ETDEWEB)

    Wandel, M.; Brodersen, K.; Phair, J. (and others)

    2009-05-15

    Within this project significant results are obtained on a number of very diverse areas ranging from development of cell production, metallic creep in interconnect to assembling and test of stacks with foot print larger than 500 cm2. Out of 38 milestones 28 have been fulfilled and 10 have been partly fulfilled. This project has focused on three main areas: 1) The continued cell development and optimization of manufacturing processes aiming at production of large foot-print cells, improving cell performance and development environmentally more benign production methods. 2) Stack technology - especially stacks with large foot print and improving the stack design with respect to flow geometry and gas leakages. 3) Development of stack components with emphasis on sealing (for 2G as well as 3G), interconnect (coat, architecture and creep) and test development. Production of cells with a foot print larger than 500 cm2 is very difficult due to the brittleness of the cells and great effort has been put into this topic. Eight cells were successfully produced making it possible to assemble and test a real stack thereby giving valuable results on the prospects of stacks with large foot print. However, the yield rate is very low and a significant development to increase this yield lies ahead. Several lessons were learned on the stack level regarding 'large foot print' stacks. Modelling studies showed that the width of the cell primarily is limited by production and handling of the cell whereas the length (in the flow direction) is limited by e.g. pressure drop and necessary manifolding. The optimal cell size in the flow direction was calculated to be between approx20 cm and < 30 cm. From an economical point of view the production yield is crucial and stacks with large foot print cell area are only feasible if the cell production yield is significantly enhanced. Co-casting has been pursued as a production technique due to the possibilities in large scale production

  9. Effect of lattice-gas atoms on the adsorption behaviour of thioether molecules.

    Science.gov (United States)

    Pan, Yi; Yang, Bing; Hulot, Catherine; Blechert, Siegfried; Nilius, Niklas; Freund, Hans-Joachim

    2012-08-21

    Using STM topographic imaging and spectroscopy, we have investigated the adsorption of two thioether molecules, 1,2-bis(phenylthio)benzene and (bis(3-phenylthio)-phenyl)sulfane, on noble and transition metal surfaces. The two substrates show nearly antipodal behaviour. Whereas complexes with one or two protruding centres are observed on Au(111), only flat and uniform ad-structures are found on NiAl(110). The difference is ascribed to the possibility of the thioethers to form metal-organic complexes by coordinating lattice-gas atoms on the Au(111), while only the pristine molecules adsorb on the alloy surface. The metal coordination in the first case is driven by the formation of strong Au-S bonds and enables the formation of characteristic monomer, dimer and chain-like structures of the thioethers, using the Au atoms as linkers. A similar mechanism is not available on the NiAl, because no lattice gas develops at this surface at room temperature. Our work demonstrates how surface properties, i.e. the availability of mobile ad-species, determine the interaction of organic molecules with metallic substrates.

  10. Investigation of the radionuclide inventory and the production yields of the target stacks at the PEFP radioisotope production facility

    International Nuclear Information System (INIS)

    Yoon, Sang-Pil; Hong, In-Seok; Cho, Yong-Sub

    2010-01-01

    The Proton Engineering Frontier Project (PEFP) will construct a radioisotope production facility by using the nuclear reaction between the 100-MeV proton beam and the solid target. For investigating the radionuclide inventory and the production yield of the radioisotope production facility, we have optimized the thickness of the prototype target stacks by using a SRIM calculation. The target stacks consist of RbCl encapsulated in inconel alloy, Zn metal, and Ga metal encapsulated in niobium. Typical beam parameters were 300 μA and 95 hours. An inventory of all generated radionuclide activities is mandatory in order to prepare the operation scenario and design the hot cell. The Monte Carlo code MCNPX was used to investigate what radionuclide is generated. The obtained radionuclide inventory indicated that about 100 radionuclides were generated and that the total radioactivity of the irradiated target stacks was 1324.1 Ci at the end of the bombardment. The production yields of Sr-82, Cu-67, and Ge-68 were 3.79 Ci, 2.74 Ci, and 1.23 Ci at the end of the bombardment.

  11. Temperature-dependent stability of stacking faults in Al, Cu and Ni: first-principles analysis.

    Science.gov (United States)

    Bhogra, Meha; Ramamurty, U; Waghmare, Umesh V

    2014-09-24

    We present comparative analysis of microscopic mechanisms relevant to plastic deformation of the face-centered cubic (FCC) metals Al, Cu, and Ni, through determination of the temperature-dependent free energies of intrinsic and unstable stacking faults along [1 1̄ 0] and [1 2̄ 1] on the (1 1 1) plane using first-principles density-functional-theory-based calculations. We show that vibrational contribution results in significant decrease in the free energy of barriers and intrinsic stacking faults (ISFs) of Al, Cu, and Ni with temperature, confirming an important role of thermal fluctuations in the stability of stacking faults (SFs) and deformation at elevated temperatures. In contrast to Al and Ni, the vibrational spectrum of the unstable stacking fault (USF[1 2̄ 1]) in Cu reveals structural instabilities, indicating that the energy barrier (γusf) along the (1 1 1)[1 2̄ 1] slip system in Cu, determined by typical first-principles calculations, is an overestimate, and its commonly used interpretation as the energy release rate needed for dislocation nucleation, as proposed by Rice (1992 J. Mech. Phys. Solids 40 239), should be taken with caution.

  12. Atomic structure of graphene supported heterogeneous model catalysts

    International Nuclear Information System (INIS)

    Franz, Dirk

    2017-04-01

    the Ir clusters show equal ratio of ABC and ACB stacking. Pt/Rh clusters show mainly (∝75 %) ABC stacking and Ir/Pd clusters show exclusively ABC stacking - note the Ir(111) substrate stacking is chosen to be ABC-like. During gas exposure the clusters gain in height, while simultaneously the ordering of the cluster lattice decreases. The order of ACB stacked Pt/Rh clusters decreases more rapidly, so that a weakening of the cluster binding due to ACB stacking is proposed. In addition a size reduction of the lowest cluster layer to a hexagonal arrangement of 19 atoms was observed, which seems to be the energetically favoured interface area between graphene/Ir(111) and the investigated metal clusters. Platinum clusters containing fewer than 40 atoms have been investigated with surface sensitive X-ray diffraction. The cluster height could be determined and a reduced atom distance among the cluster was observed. CO exposure decreased the in-plane atom distance even more. This effect could be reverted by a subsequent oxygen exposure (2CO + O_2 → 2 CO_2). For Pt/Rh clusters with fewer than 60 atoms the element distribution was investigated and revealed an enrichment of Rh at the two topmost cluster layers. This element distribution was found for co-deposition and sequential deposition of the material and is therefore independent of the order of deposition. Oxygen exposure led to the formation of a rhodium surface oxide, which could be prevented by preceding CO exposure. In case of Ir/Pd clusters containing ∝60 atoms we found preferences for a core/shell structure with iridium atoms at core sites. Exposure to p(H_2)=1 bar did not result in the formation of the palladium β-phase, so that a reduced hydrogen solubility of graphene/Ir(111) supported palladium clusters is assumed. The reduced hydrogen solubility is probably a consequence of substrate induced strain among the cluster atoms.

  13. Atomic structure of graphene supported heterogeneous model catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Franz, Dirk

    2017-04-15

    , whereupon the Ir clusters show equal ratio of ABC and ACB stacking. Pt/Rh clusters show mainly (∝75 %) ABC stacking and Ir/Pd clusters show exclusively ABC stacking - note the Ir(111) substrate stacking is chosen to be ABC-like. During gas exposure the clusters gain in height, while simultaneously the ordering of the cluster lattice decreases. The order of ACB stacked Pt/Rh clusters decreases more rapidly, so that a weakening of the cluster binding due to ACB stacking is proposed. In addition a size reduction of the lowest cluster layer to a hexagonal arrangement of 19 atoms was observed, which seems to be the energetically favoured interface area between graphene/Ir(111) and the investigated metal clusters. Platinum clusters containing fewer than 40 atoms have been investigated with surface sensitive X-ray diffraction. The cluster height could be determined and a reduced atom distance among the cluster was observed. CO exposure decreased the in-plane atom distance even more. This effect could be reverted by a subsequent oxygen exposure (2CO + O{sub 2} → 2 CO{sub 2}). For Pt/Rh clusters with fewer than 60 atoms the element distribution was investigated and revealed an enrichment of Rh at the two topmost cluster layers. This element distribution was found for co-deposition and sequential deposition of the material and is therefore independent of the order of deposition. Oxygen exposure led to the formation of a rhodium surface oxide, which could be prevented by preceding CO exposure. In case of Ir/Pd clusters containing ∝60 atoms we found preferences for a core/shell structure with iridium atoms at core sites. Exposure to p(H{sub 2})=1 bar did not result in the formation of the palladium β-phase, so that a reduced hydrogen solubility of graphene/Ir(111) supported palladium clusters is assumed. The reduced hydrogen solubility is probably a consequence of substrate induced strain among the cluster atoms.

  14. Stacking fault tetrahedron induced plasticity in copper single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Liang, E-mail: lz592@uowmail.edu.au [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Lu, Cheng, E-mail: chenglu@uow.edu.au [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Tieu, Kiet; Su, Lihong; Zhao, Xing [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia); Pei, Linqing [Department of Mechanical Engineering, Chongqing University, Chongqing 400044 (China)

    2017-01-05

    Stacking fault tetrahedron (SFT) is the most common type of vacancy clustered defects in fcc metals and alloys, and can play an important role in the mechanical properties of metallic materials. In this study, molecular dynamics (MD) simulations were carried out to investigate the incipience of plasticity and the underlying atomic mechanisms in copper single crystals with SFT. Different deformation mechanisms of SFT were reported due to the crystal orientations and loading directions (compression and tension). The results showed that the incipient plasticity in crystals with SFT resulted from the heterogeneous dislocation nucleation from SFT, so the stress required for plastic deformation was less than that needed for perfect single crystals. Three crystal orientations ([1 0 0], [1 1 0] and [1 1 1]) were specified in this study because they can represent most of the typical deformation mechanisms of SFT. MD simulations revealed that the structural transformation of SFT was frequent under the applied loading; a metastable SFT structure and the collapse of SFT were usually observed. The structural transformation resulted in a different reduction of yield stress in compression and tension, and also caused a decreased or reversed compression/tension asymmetry. Compressive stress can result in the unfaulting of Frank loop in some crystal orientations. According to the elastic theory of dislocation, the process of unfaulting was closely related to the size of the dislocation loop and the stacking fault energy.

  15. Thickness dependent properties of CMR Manganite thin films on lattice mismatched substrates: Distinguishing Strain and Interface Effects

    Science.gov (United States)

    Davidson, Anthony, III; Kolagani, Rajeswari; Bacharova, Ellisaveta; Yong, Grace; Smolyaninova, Vera; Schaefer, David; Mundle, Rajeh

    2007-03-01

    Epitaxial thin films of CMR manganite materials have been known to show thickness dependent electrical and magnetic properties on lattice mismatched substrates. Below a critical thickness, insulator-metal transition is suppressed. These effects have been largely attributed to the role of bi-axial lattice mismatch strain. Our recent results of epitaxial thin films of La0.67Ca0.33MnO3 (LCMO) on two substrates with varying degrees of compressive lattice mismatch indicate that, in addition to the effect of lattice mismatch strain, the thickness dependence of the properties are influenced by other factors possibly related to the nature of the film substrate interface and defects such as twin boundaries. We have compared the properties of LCMO films on (100) oriented LaAlO3 and (001) oriented NdCaAlO4 both of which induce compressive bi-axial strain. Interestingly, the suppression of the insulator-metal transition is less in films on NCAO which has a larger lattice mismatch. We will present results correlating the electrical and magneto transport properties with the structure and morphology of the films.

  16. All-Metallic Vertical Transistors Based on Stacked Dirac Materials

    OpenAIRE

    Wang, Yangyang; Ni, Zeyuan; Liu, Qihang; Quhe, Ruge; Zheng, Jiaxin; Ye, Meng; Yu, Dapeng; Shi, Junjie; Yang, Jinbo; Lu, Jing

    2014-01-01

    It is an ongoing pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac ...

  17. The sequence d(CGGCGGCCGC) self-assembles into a two dimensional rhombic DNA lattice

    International Nuclear Information System (INIS)

    Venkadesh, S.; Mandal, P.K.; Gautham, N.

    2011-01-01

    Highlights: → This is the first crystal structure of a four-way junction with sticky ends. → Four junction structures bind to each other and form a rhombic cavity. → Each rhombus binds to others to form 'infinite' 2D tiles. → This is an example of bottom-up fabrication of a DNA nano-lattice. -- Abstract: We report here the crystal structure of the partially self-complementary decameric sequence d(CGGCGGCCGC), which self assembles to form a four-way junction with sticky ends. Each junction binds to four others through Watson-Crick base pairing at the sticky ends to form a rhombic structure. The rhombuses bind to each other and form two dimensional tiles. The tiles stack to form the crystal. The crystal diffracted in the space group P1 to a resolution of 2.5 A. The junction has the anti-parallel stacked-X conformation like other junction structures, though the formation of the rhombic net noticeably alters the details of the junction geometry.

  18. Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2018-02-01

    Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

  19. Lattice QCD

    International Nuclear Information System (INIS)

    Hasenfratz, P.

    1983-01-01

    The author presents a general introduction to lattice gauge theories and discusses non-perturbative methods in the gauge sector. He then shows how the lattice works in obtaining the string tension in SU(2). Lattice QCD at finite physical temperature is discussed. Universality tests in SU(2) lattice QCD are presented. SU(3) pure gauge theory is briefly dealt with. Finally, fermions on the lattice are considered. (Auth.)

  20. Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

    Energy Technology Data Exchange (ETDEWEB)

    Popovici, M., E-mail: Mihaela.Ioana.Popovici@imec.be; Swerts, J.; Redolfi, A.; Kaczer, B.; Aoulaiche, M.; Radu, I.; Clima, S.; Everaert, J.-L.; Van Elshocht, S.; Jurczak, M. [Imec, Leuven 3001 (Belgium)

    2014-02-24

    Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.

  1. Permeability measurements and modeling of topology-optimized metallic 3-D woven lattices

    International Nuclear Information System (INIS)

    Zhao, Longyu; Ha, Seunghyun; Sharp, Keith W.; Geltmacher, Andrew B.; Fonda, Richard W.; Kinsey, Alex H.; Zhang, Yong; Ryan, Stephen M.; Erdeniz, Dinc; Dunand, David C.; Hemker, Kevin J.; Guest, James K.; Weihs, Timothy P.

    2014-01-01

    Topology optimization was combined with a 3-D weaving technique to design and fabricate structures with optimized combinations of fluid permeability and mechanical stiffness. Two different microarchitected structures are considered: one is a “standard” weave in which all wires were included, while the other is termed an “optimized” weave as specific wires were removed to maximize the permeability of the resulting porous materials with only a limited reduction in stiffness. Permeability was measured and predicted for both structures that were 3-D woven with either Cu or Ni–20Cr wires. The as-woven wires in the Cu lattices were bonded at contact points using solder or braze while the Ni–20Cr wires were bonded at contact points using pack aluminization. Permeability was measured under laminar flow conditions in all three normal directions for unbonded and bonded samples and in the optimized structure it was found to increase between 200% and 600%, depending on direction, over the standard structures. Permeability was also predicted using finite-element modeling with as-fabricated wires positions that were identified with optical microscopy or X-ray tomography; the measurements and predictions show good agreement. Lastly, the normalized permeability values significantly exceed those found for stochastic, metallic foams and other periodic structures with a material volume fraction of over 30%

  2. Line profile analyses of rhodium metal obtained by decomposition of rhodium carbonyl

    International Nuclear Information System (INIS)

    Chandra, D.; Mandalia, H.; Garner, M.L.; Blakely, M.K.; Lau, K.H.

    1995-01-01

    Metal carbonyls are important for chemical vapor deposition (CVD) of metals and alloys and formation of high surface area metallic particles which have potential applications as catalysts. Rhodium carbonyl [Rh 6 (CO) 16 ] produces high surface area metallic particles whose structure has been reported as monoclinic (I2/a) with lattice dimensions, a=17.00(±0.03)Angstrom, b=9.78(±0.02)Angstrom, c=17.53(±0.03)Angstrom and Β=121 degrees 45' ± 30' at room temperature. Generally, metal carbonyl crystals dissociate under vacuum as carbonyl gas and decompose to metallic crystals and carbon monoxide at higher temperatures. However, the behavior of rhodium carbonyl crystals is different; they decompose directly to metallic rhodium without the formation of rhodium carbonyl gas in vacuum. Several residual fine grains of rhodium metal are found after the decomposition in vacuum at relatively low temperatures. The metallic samples of rhodium were obtained from vapor pressure experiments using torsion Knudsen-effusion apparatus. X-ray diffraction analyses performed on these gains showed severely broadened Bragg reflections indicative of small particle size and/or lattice microgram. In this study, a comparison of lattice strains and domain sizes obtained by integral breadth and Fourier methods has been made. In addition a comparison of the lattice strains and domain sizes has been made between the Cauchy, Gaussian, Cauchy-Gaussian and Aqua integral breadth methods

  3. Helping Students Design HyperCard Stacks.

    Science.gov (United States)

    Dunham, Ken

    1995-01-01

    Discusses how to teach students to design HyperCard stacks. Highlights include introducing HyperCard, developing storyboards, introducing design concepts and scripts, presenting stacks, evaluating storyboards, and continuing projects. A sidebar presents a HyperCard stack evaluation form. (AEF)

  4. Lattice location of impurities in silicon Carbide

    CERN Document Server

    AUTHOR|(CDS)2085259; Correia Martins, João Guilherme

    The presence and behaviour of transition metals (TMs) in SiC has been a concern since the start of producing device-grade wafers of this wide band gap semiconductor. They are unintentionally introduced during silicon carbide (SiC) production, crystal growth and device manufacturing, which makes them difficult contaminants to avoid. Once in SiC they easily form deep levels, either when in the isolated form or when forming complexes with other defects. On the other hand, using intentional TM doping, it is possible to change the electrical, optical and magnetic properties of SiC. TMs such as chromium, manganese or iron have been considered as possible candidates for magnetic dopants in SiC, if located on silicon lattice sites. All these issues can be explored by investigating the lattice site of implanted TMs. This thesis addresses the lattice location and thermal stability of the implanted TM radioactive probes 56Mn, 59Fe, 65Ni and 111Ag in both cubic 3C- and hexagonal 6H SiC polytypes by means of emission cha...

  5. Dicke superradiance as nondestructive probe for the state of atoms in optical lattices

    Science.gov (United States)

    ten Brinke, Nicolai; Schützhold, Ralf

    2016-04-01

    We present a proposal for a probing scheme utilizing Dicke superradiance to obtain information about ultracold atoms in optical lattices. A probe photon is absorbed collectively by an ensemble of lattice atoms generating a Dicke state. The lattice dynamics (e.g., tunneling) affects the coherence properties of that Dicke state and thus alters the superradiant emission characteristics - which in turn provides insight into the lattice (dynamics). Comparing the Bose-Hubbard and the Fermi-Hubbard model, we find similar superradiance in the strongly interacting Mott insulator regime, but crucial differences in the weakly interacting (superfluid or metallic) phase. Furthermore, we study the possibility to detect whether a quantum phase transition between the two regimes can be considered adiabatic or a quantum quench.

  6. Modular fuel-cell stack assembly

    Science.gov (United States)

    Patel, Pinakin

    2010-07-13

    A fuel cell assembly having a plurality of fuel cells arranged in a stack. An end plate assembly abuts the fuel cell at an end of said stack. The end plate assembly has an inlet area adapted to receive an exhaust gas from the stack, an outlet area and a passage connecting the inlet area and outlet area and adapted to carry the exhaust gas received at the inlet area from the inlet area to the outlet area. A further end plate assembly abuts the fuel cell at a further opposing end of the stack. The further end plate assembly has a further inlet area adapted to receive a further exhaust gas from the stack, a further outlet area and a further passage connecting the further inlet area and further outlet area and adapted to carry the further exhaust gas received at the further inlet area from the further inlet area to the further outlet area.

  7. Dirac cones in isogonal hexagonal metallic structures

    Science.gov (United States)

    Wang, Kang

    2018-03-01

    A honeycomb hexagonal metallic lattice is equivalent to a triangular atomic one and cannot create Dirac cones in its electromagnetic wave spectrum. We study in this work the low-frequency electromagnetic band structures in isogonal hexagonal metallic lattices that are directly related to the honeycomb one and show that such structures can create Dirac cones. The band formation can be described by a tight-binding model that allows investigating, in terms of correlations between local resonance modes, the condition for the Dirac cones and the consequence of the third structure tile sustaining an extra resonance mode in the unit cell that induces band shifts and thus nonlinear deformation of the Dirac cones following the wave vectors departing from the Dirac points. We show further that, under structure deformation, the deformations of the Dirac cones result from two different correlation mechanisms, both reinforced by the lattice's metallic nature, which directly affects the resonance mode correlations. The isogonal structures provide new degrees of freedom for tuning the Dirac cones, allowing adjustment of the cone shape by modulating the structure tiles at the local scale without modifying the lattice periodicity and symmetry.

  8. He–He and He–metal interactions in transition metals from first-principles

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Pengbo, E-mail: zhangpb@dlmu.edu.cn [Department of Physics, Dalian Maritime University, Dalian 116026 (China); Zou, Tingting [Information Science and Technology College, Dalian Maritime University, Dalian 116026 (China); Zhao, Jijun, E-mail: zhaojj@dlut.edu.cn [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China)

    2015-12-15

    We investigated the atomistic mechanism of He–He and He–metal interactions in bcc transition metals (V, Nb, Ta, Cr, Mo, W, and Fe) using first-principles methods. We calculated formation energy and binding energy of He–He pair as function of distance within the host lattices. The strengths of He–He attraction in Cr, Mo, W, and Fe (0.37–1.11 eV) are significantly stronger than those in V, Nb, and Ta (0.06–0.17 eV). Such strong attractions mean that He atoms would spontaneously aggregate inside perfect Cr, Mo, W, and Fe host lattices in absence of defects like vacancies. The most stable configuration of He–He pair is <100> dumbbell in groups VB metals, whereas it adopts close <110> configuration in Cr, Mo, and Fe, and close <111> configuration in W. Overall speaking, the He–He equilibrium distances of 1.51–1.55 Å in the group VIB metals are shorter than 1.65–1.70 Å in the group VB metals. Moreover, the presence of interstitial He significantly facilitates vacancy formation and this effect is more pronounced in the group VIB metals. The present calculations help understand the He-metal/He–He interaction mechanism and make a prediction that He is easier to form He cluster and bubbles in the groups VIB metals and Fe.

  9. Guanine base stacking in G-quadruplex nucleic acids

    Science.gov (United States)

    Lech, Christopher Jacques; Heddi, Brahim; Phan, Anh Tuân

    2013-01-01

    G-quadruplexes constitute a class of nucleic acid structures defined by stacked guanine tetrads (or G-tetrads) with guanine bases from neighboring tetrads stacking with one another within the G-tetrad core. Individual G-quadruplexes can also stack with one another at their G-tetrad interface leading to higher-order structures as observed in telomeric repeat-containing DNA and RNA. In this study, we investigate how guanine base stacking influences the stability of G-quadruplexes and their stacked higher-order structures. A structural survey of the Protein Data Bank is conducted to characterize experimentally observed guanine base stacking geometries within the core of G-quadruplexes and at the interface between stacked G-quadruplex structures. We couple this survey with a systematic computational examination of stacked G-tetrad energy landscapes using quantum mechanical computations. Energy calculations of stacked G-tetrads reveal large energy differences of up to 12 kcal/mol between experimentally observed geometries at the interface of stacked G-quadruplexes. Energy landscapes are also computed using an AMBER molecular mechanics description of stacking energy and are shown to agree quite well with quantum mechanical calculated landscapes. Molecular dynamics simulations provide a structural explanation for the experimentally observed preference of parallel G-quadruplexes to stack in a 5′–5′ manner based on different accessible tetrad stacking modes at the stacking interfaces of 5′–5′ and 3′–3′ stacked G-quadruplexes. PMID:23268444

  10. Production of crystalline refractory metal oxides containing colloidal metal precipitates and useful as solar-effective absorbers

    Science.gov (United States)

    Narayan, Jagdish; Chen, Yok

    1983-01-01

    This invention is a new process for producing refractory crystalline oxides having improved or unusual properties. The process comprises the steps of forming a doped-metal crystal of the oxide; exposing the doped crystal in a bomb to a reducing atmosphere at superatmospheric pressure and a temperature effecting precipitation of the dopant metal in the crystal lattice of the oxide but insufficient to effect net diffusion of the metal out of the lattice; and then cooling the crystal. Preferably, the cooling step is effected by quenching. The process forms colloidal precipitates of the metal in the oxide lattice. The process may be used, for example, to produce thermally stable black MgO crystalline bodies containing magnetic colloidal precipitates consisting of about 99% Ni. The Ni-containing bodies are solar-selective absorbers, having a room-temperature absorptivity of about 0.96 over virtually all of the solar-energy spectrum and exhibiting an absorption edge in the region of 2 .mu.m. The process parameters can be varied to control the average size of the precipitates. The process can produce a black MgO crystalline body containing colloidal Ni precipitates, some of which have the face-centered-cubic structure and others of which have the body-centered cubic structure. The products of the process are metal-precipitate-containing refractory crystalline oxides which have improved or unique optical, mechanical, magnetic, and/or electronic properties.

  11. AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

    Science.gov (United States)

    Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

    1990-01-01

    Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

  12. The observation of helium gas bubble lattices in copper, nickel and stainless steel

    International Nuclear Information System (INIS)

    Johnson, P.B.; Mazey, D.J.

    1978-10-01

    Transmission electron microscopy is used to investigate the spatial arrangement of the small gas bubbles produced in several fcc metals by 30 keV helium ion irradiation to high dose at 300K. In what is a new result for this important class of metals it is found that the helium gas bubbles lie on a superlattice having an fcc structure with principal axes aligned with those of the metal matrix. The bubble lattice constant, asub(l), is measured for a helium fluence just below the critical dose for radiation blistering of the metal surface. Implantation rates are typically approximately 10 14 He ions cm -2 sec -1 . The values of asub(l) obtained for copper, nickel and stainless steel are given. Above the critical dose the bubble lattice is seen to survive in some blister caps as well as in the region between blisters. Bubble alignment is also observed in the case of hydrogen bubbles produced in copper by low energy proton irradiation to high fluence at 300K. (author)

  13. Noncentral forces and lattice vibration in transition metals. Alpha-iron, chromium, and tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Singh, V P; Kharoo, H L; Kumar, M; Hemkar, M P [Allahabad Univ. (India). Dept. of Physics

    1976-03-11

    The elastic-force model proposed in a previous paper has been considered to compute the phonon dispersion relations for lattice waves propagating along the principal symmetry directions of ..cap alpha..-iron, chromium and tungsten. The model, however, takes into account the central forces together with the Clark, Gazis and Wallis type angular forces and the effect of electron-iron interaction on the lattice vibration as outlined by Krebs. The theoretical results are found to be quite satisfactory and compare well with recent neutron scattering data.

  14. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

    Science.gov (United States)

    Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

  15. Hydrogen Production Performance of a 10-Cell Planar Solid-Oxide Electrolysis Stack

    International Nuclear Information System (INIS)

    James O'Brien; Carl Stoots; Steve Herring; J. Hartvigsen

    2005-01-01

    An experimental study is under way to assess the performance of solid-oxide cells operating in the steam electrolysis mode for hydrogen production over a temperature range of 800 to 900 C. Results presented in this paper were obtained from a ten-cell planar electrolysis stack, with an active area of 64 cm2 per cell. The electrolysis cells are electrolyte supported, with scandia-stabilized zirconia electrolytes (∼140 (micro)m thick), nickel-cermet steam/hydrogen electrodes, and manganite air-side electrodes. The metallic interconnect plates are fabricated from ferritic stainless steel. The experiments were performed over a range of steam inlet mole fractions (0.1-0.6), gas flow rates (1000-4000 sccm), and current densities (0 to 0.38 A/cm2). Steam consumption rates associated with electrolysis were measured directly using inlet and outlet dewpoint instrumentation. Cell operating potentials and cell current were varied using a programmable power supply. Hydrogen production rates up to 100 Normal liters per hour were demonstrated. Values of area-specific resistance and stack internal temperatures are presented as a function of current density. Stack performance is shown to be dependent on inlet steam flow rate

  16. Resin infusion of layered metal/composite hybrid and resulting metal/composite hybrid laminate

    Science.gov (United States)

    Cano, Roberto J. (Inventor); Grimsley, Brian W. (Inventor); Weiser, Erik S. (Inventor); Jensen, Brian J. (Inventor)

    2009-01-01

    A method of fabricating a metal/composite hybrid laminate is provided. One or more layered arrangements are stacked on a solid base to form a layered structure. Each layered arrangement is defined by a fibrous material and a perforated metal sheet. A resin in its liquid state is introduced along a portion of the layered structure while a differential pressure is applied across the laminate structure until the resin permeates the fibrous material of each layered arrangement and fills perforations in each perforated metal sheet. The resin is cured thereby yielding a metal/composite hybrid laminate.

  17. Stack filter classifiers

    Energy Technology Data Exchange (ETDEWEB)

    Porter, Reid B [Los Alamos National Laboratory; Hush, Don [Los Alamos National Laboratory

    2009-01-01

    Just as linear models generalize the sample mean and weighted average, weighted order statistic models generalize the sample median and weighted median. This analogy can be continued informally to generalized additive modeels in the case of the mean, and Stack Filters in the case of the median. Both of these model classes have been extensively studied for signal and image processing but it is surprising to find that for pattern classification, their treatment has been significantly one sided. Generalized additive models are now a major tool in pattern classification and many different learning algorithms have been developed to fit model parameters to finite data. However Stack Filters remain largely confined to signal and image processing and learning algorithms for classification are yet to be seen. This paper is a step towards Stack Filter Classifiers and it shows that the approach is interesting from both a theoretical and a practical perspective.

  18. Diffractive stacks of metamaterial lattices with a complex unit cell : Self-consistent long-range bianisotropic interactions in experiment and theory

    NARCIS (Netherlands)

    Kwadrin, A.; Koenderink, A.F.

    2014-01-01

    Metasurfaces and metamaterials promise arbitrary rerouting of light using two-dimensional (2D) planar arrangements of electric and magnetic scatterers, respectively, 3D stacks built out of such 2D planes. An important problem is how to self-consistently model the response of these systems in a

  19. Lattice-induced nonadiabatic frequency shifts in optical lattice clocks

    International Nuclear Information System (INIS)

    Beloy, K.

    2010-01-01

    We consider the frequency shift in optical lattice clocks which arises from the coupling of the electronic motion to the atomic motion within the lattice. For the simplest of three-dimensional lattice geometries this coupling is shown to affect only clocks based on blue-detuned lattices. We have estimated the size of this shift for the prospective strontium lattice clock operating at the 390-nm blue-detuned magic wavelength. The resulting fractional frequency shift is found to be on the order of 10 -18 and is largely overshadowed by the electric quadrupole shift. For lattice clocks based on more complex geometries or other atomic systems, this shift could potentially be a limiting factor in clock accuracy.

  20. Change in lattice parameter of tantalum due to dissolved hydrogen

    Directory of Open Access Journals (Sweden)

    Gyanendra P. Tiwari

    2012-06-01

    Full Text Available The volume expansion of tantalum due to the dissolved hydrogen has been determined using Bragg equation. The hydrogen was dissolved in the pure tantalum metal at constant temperature (360 °C and constant pressure (132 mbar by varying the duration of hydrogen charging. The amount of dissolved hydrogen was within the solid solubility limit. The samples with different hydrogen concentration were analyzed by X-ray diffraction technique. Slight peak shifts as well as peak broadening were observed. The relative changes of lattice parameters plotted against the hydrogen concentration revealed that the lattice parameters varied linearly with the hydrogen concentration.

  1. LONG-TERM PERFORMANCE OF SOLID OXIDE STACKS WITH ELECTRODE-SUPPORTED CELLS OPERATING IN THE STEAM ELECTROLYSIS MODE

    Energy Technology Data Exchange (ETDEWEB)

    J. E. O' Brien; R. C. O' Brien; X. Zhang; G. Tao; B. J. Butler

    2011-11-01

    Performance characterization and durability testing have been completed on two five-cell high-temperature electrolysis stacks constructed with advanced cell and stack technologies. The solid oxide cells incorporate a negative-electrode-supported multi-layer design with nickel-zirconia cermet negative electrodes, thin-film yttria-stabilized zirconia electrolytes, and multi-layer lanthanum ferrite-based positive electrodes. The per-cell active area is 100 cm2. The stack is internally manifolded with compliant mica-glass seals. Treated metallic interconnects with integral flow channels separate the cells. Stack compression is accomplished by means of a custom spring-loaded test fixture. Initial stack performance characterization was determined through a series of DC potential sweeps in both fuel cell and electrolysis modes of operation. Results of these sweeps indicated very good initial performance, with area-specific resistance values less than 0.5 ?.cm2. Long-term durability testing was performed with A test duration of 1000 hours. Overall performance degradation was less than 10% over the 1000-hour period. Final stack performance characterization was again determined by a series of DC potential sweeps at the same flow conditions as the initial sweeps in both electrolysis and fuel cell modes of operation. A final sweep in the fuel cell mode indicated a power density of 0.356 W/cm2, with average per-cell voltage of 0.71 V at a current of 50 A.

  2. From the components to the stack. Developing and designing 5kW HT-PEFC stacks; Von der Komponente zum Stack. Entwicklung und Auslegung von HT-PEFC-Stacks der 5 kW-Klasse

    Energy Technology Data Exchange (ETDEWEB)

    Bendzulla, Anne

    2010-12-22

    The aim of the present project is to develop a stack design for a 5-kW HTPEFC system. First, the state of the art of potential materials and process designs will be discussed for each component. Then, using this as a basis, three potential stack designs with typical attributes will be developed and assessed in terms of practicality with the aid of a specially derived evaluation method. Two stack designs classified as promising will be discussed in detail, constructed and then characterized using short stack tests. Comparing the stack designs reveals that both designs are fundamentally suitable for application in a HT-PEFC system with on-board supply. However, some of the performance data differ significantly for the two stack designs. The preferred stack design for application in a HT-PEFC system is characterized by robust operating behaviour and reproducible high-level performance data. Moreover, in compact constructions (120 W/l at 60 W/kg), the stack design allows flexible cooling with thermal oil or air, which can be adapted to suit specific applications. Furthermore, a defined temperature gradient can be set during operation, allowing the CO tolerance to be increased by up to 10 mV. The short stack design developed within the scope of the present work therefore represents an ideal basis for developing a 5-kW HT-PEFC system. Topics for further research activities include improving the performance by reducing weight and/or volume, as well as optimizing the heat management. The results achieved within the framework of this work clearly show that HTPEFC stacks have the potential to play a decisive role in increasing efficiency in the future, particularly when combined with an on-board supply system. (orig.) [German] Ziel der vorliegenden Arbeit ist die Entwicklung eines Stackkonzeptes fuer ein 5 kW-HT-PEFC System. Dazu wird zunaechst fuer jede Komponente der Stand der Technik moeglicher Materialien und Prozesskonzepte diskutiert. Darauf aufbauend werden drei

  3. Dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Bhartiya, S. [Laser Materials Development & Devices Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Gupta, M. [UGC-DAE Consortium for Scientific Research, Indore 452 017 (India)

    2016-01-25

    We report on the dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiO{sub x} on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ∼6–65 nm by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R{sub ◻}) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R{sub ◻}(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R{sub ◻} and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiO{sub x} stacked layers which have potential applications in the field of transparent oxide electronics.

  4. Alkali metal and alkali metal hydroxide intercalates of the layered transition metal disulfides

    International Nuclear Information System (INIS)

    Kanzaki, Y.; Konuma, M.; Matsumoto, O.

    1981-01-01

    The intercalation reaction of some layered transition metal disulfides with alkali metals, alkali metal hydroxides, and tetraalkylammonium hydroxides were investigated. The alkali metal intercalates were prepared in the respective metal-hexamethylphosphoric triamide solutions in vaccuo, and the hydroxide intercalates in aqueous hydroxide solutions. According to the intercalation reaction, the c-lattice parameter was increased, and the increase indicated the expansion of the interlayer distance. In the case of alkali metal intercalates, the expansion of the interlayer distance increased continuously, corresponding to the atomic radius of the alkali metal. On the other hand, the hydroxide intercalates showed discrete expansion corresponding to the effective ionic radius of the intercalated cation. All intercalates of TaS 2 amd NbS 2 were superconductors. The expansion of the interlayer distance tended to increase the superconducting transition temperature in the intercalates of TaS 2 and vice versa in those of NbS 2 . (orig.)

  5. Effect of loading mode on lattice strain measurements via neutron diffraction

    International Nuclear Information System (INIS)

    Skippon, T.; Clausen, B.; Daymond, M.R.

    2013-01-01

    The study of lattice strain evolution during uniaxial deformation via in situ neutron diffraction is a well established technique for characterizing the deformation behavior of metals. However, the relatively low flux of neutron facilities results in count times on the order of several minutes, requiring experimenters to choose between either applying a very slow strain rate, or loading the sample incrementally rather than continuously. Here we investigate the effects on lattice strain data obtained by using stress, strain, and position controlled incremental loading, as well as continuous loading, on samples of Zircaloy-2 under uniaxial compression. It was found that both qualitative and quantitative differences arise in the lattice strain behavior of certain grain families, particularly {101 ¯ 0} and {112 ¯ 0}, while other grain families show no discernible effect. The differences in lattice strain evolution brought on by the variation in loading modes are believed to be the result of thermally activated dislocation motion

  6. Text-Filled Stacked Area Graphs

    DEFF Research Database (Denmark)

    Kraus, Martin

    2011-01-01

    -filled stacked area graphs; i.e., graphs that feature stacked areas that are filled with small-typed text. Since these graphs allow for computing the text layout automatically, it is possible to include large amounts of textual detail with very little effort. We discuss the most important challenges and some...... solutions for the design of text-filled stacked area graphs with the help of an exemplary visualization of the genres, publication years, and titles of a database of several thousand PC games....

  7. Hexagonal perovskites with cationic vacancies. 14. The rhombohedral 12 L-stacking polytypes Ba/sub 2/La/sub 2/Bsup(II)(W/sub 2/sup(VI)vacantO/sub 12/)

    Energy Technology Data Exchange (ETDEWEB)

    Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.). Lehrstuhl fuer Anorganische Chemie 2

    1980-02-01

    Rhombohedral 12 L-stacking polytypes with cationic vacancies of type Ba/sub 2/La/sub 2/Bsup(II)(W/sub 2/sup(VI)vacantO/sub 12/) are reported for Bsup(II) = Mg, Zn (white), Ni (light brown) and Co (brown). For Bsup(II) = Cu, as a consequence of the Jahn Teller effect, a triclinic distorted lattice is observed.

  8. Lattice strings

    International Nuclear Information System (INIS)

    Thorn, C.B.

    1988-01-01

    The possibility of studying non-perturbative effects in string theory using a world sheet lattice is discussed. The light-cone lattice string model of Giles and Thorn is studied numerically to assess the accuracy of ''coarse lattice'' approximations. For free strings a 5 by 15 lattice seems sufficient to obtain better than 10% accuracy for the bosonic string tachyon mass squared. In addition a crude lattice model simulating string like interactions is studied to find out how easily a coarse lattice calculation can pick out effects such as bound states which would qualitatively alter the spectrum of the free theory. The role of the critical dimension in obtaining a finite continuum limit is discussed. Instead of the ''gaussian'' lattice model one could use one of the vertex models, whose continuum limit is the same as a gaussian model on a torus of any radius. Indeed, any critical 2 dimensional statistical system will have a stringy continuum limit in the absence of string interactions. 8 refs., 1 fig. , 9 tabs

  9. Tandem-type organic solar cells by stacking different heterojunction materials

    International Nuclear Information System (INIS)

    Triyana, Kuwat; Yasuda, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo

    2005-01-01

    Three layers of phthalocyanine/perylene heterojunction (HJ) components were stacked and sandwiched by an indium tin oxide (ITO) and a top metal electrode, which is denoted by a triple-HJ organic solar cell. The organic material in the middle-HJ component second from the ITO was varied to investigate the photovoltaic properties. The power conversion efficiency (PCE) was improved by the more balanced photo-generated carrier by use of the appropriate material for the second-HJ component. The optimized device showed higher PCE (1.38%) than the reference device (0.98%)

  10. States of light positive particles in metals

    International Nuclear Information System (INIS)

    Klamt, A.G.

    1987-01-01

    The states of light positively charged particles in metals are treated in tight-binding approximation. The polaron states of the particles are investigated. The 'molecular crystal model' and an interstitial model' are treated. Moreover, the particle-lattice coupling of excited particles is treated for fcc and bcc lattices. (BHO)

  11. Chemistry-driven structural alterations in short-term retrieved ceramic-on-metal hip implants: Evidence for in vivo incompatibility between ceramic and metal counterparts.

    Science.gov (United States)

    Zhu, Wenliang; Pezzotti, Giuseppe; Boffelli, Marco; Chotanaphuti, Thanainit; Khuangsirikul, Saradej; Sugano, Nobuhiko

    2017-08-01

    Ceramic-on-metal (CoM) hip implants were reported to experience lower wear rates in vitro as compared to metal-on-metal (MoM) bearings, thus hinting metal-ion release at lower levels in vivo. In this article, we show a spectroscopic study of two short-term retrieval cases of zirconia-toughened alumina (ZTA) femoral heads belonging to CoM hip prostheses, which instead showed poor wear performances in vivo. Metal contamination and abnormally high fractions of tetragonal-to-monoclinic (t→m) polymorphic transformation of the zirconia phase could be found on both ZTA heads, which contrasted with the optimistic predictions of in vitro experiments. At the molecular scale, incorporation of metal ions into the ceramic lattices could be recognized as due to frictionally assisted phenomena occurring at the ceramic surface. Driven by abnormal friction, diffusion of metal ions induced lattice shrinkage in the zirconia phases, while residual stress fields became stored at the surface of the femoral head. Diffusional alterations destabilized the chemistry of the ceramic surface and resulted in an abnormal increase in t→m phase transformation in vivo. Frictionally driven metal transfer to the ceramic lattice thus hinders the in vivo performance of CoM prostheses. © 2016 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 105B: 1469-1480, 2017. © 2016 Wiley Periodicals, Inc.

  12. The problem of reactivity and reaction-rate calculations for mixed graphite lattices

    International Nuclear Information System (INIS)

    Pitcher, H.H.W.

    1963-05-01

    The dependence of reactor physics quantities, such as η f and Pu239/U235 fission ratio, in a single cell on the environment of the cell, and the relationship of the reactivity of a mixed lattice to the reactivity of its components, in graphite-moderated reactors are investigated. In a particular case, a mixed lattice fuelled with uranium at 0 and 3000 MWD/Te showed at 8 cm. pitch a small but appreciable change (∼ 1%) in cell quantities, and at 25 cm. pitch a smaller change. It is found that the present method of calculating lattice reactivity, ignoring intercell effects, is probably adequate for standard-pitch metal-fuelled graphite-moderated systems. More general mixed-lattice systems, particularly if accurate values of cell quantities are required, may need special calculation techniques; these are discussed, and techniques adequate for most systems are presented. (author)

  13. An impact analysis of a micro wind system. [windpower for recovering magnesium from stack dust

    Science.gov (United States)

    Zimmer, R. P.; Robinette, S. L.; Mason, R. M.; Schaffer, W. A.

    1975-01-01

    A process for the recovery of steel mill stack dust has been developed and is being used to recover secondary metals by a small company in Georgia. The process is energy intensive and wind generators were studied as a means of supplying energy for part of the recovery process. Some of the results of this study will be presented.

  14. Iridium Interfacial Stack - IrIS

    Science.gov (United States)

    Spry, David

    2012-01-01

    Iridium Interfacial Stack (IrIS) is the sputter deposition of high-purity tantalum silicide (TaSi2-400 nm)/platinum (Pt-200 nm)/iridium (Ir-200 nm)/platinum (Pt-200 nm) in an ultra-high vacuum system followed by a 600 C anneal in nitrogen for 30 minutes. IrIS simultaneously acts as both a bond metal and a diffusion barrier. This bondable metallization that also acts as a diffusion barrier can prevent oxygen from air and gold from the wire-bond from infiltrating silicon carbide (SiC) monolithically integrated circuits (ICs) operating above 500 C in air for over 1,000 hours. This TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. There are two ways that IrIS can be used in SiC ICs for applications above 500 C: it can be put directly on a SiC ohmic contact metal, such as Ti, or be used as a bond metal residing on top of an interconnect metal. For simplicity, only the use as a bond metal is discussed. The layer thickness ratio of TaSi2 to the first Pt layer deposited thereon should be 2:1. This will allow Si from the TaSi2 to react with the Pt to form Pt2Si during the 600 C anneal carried out after all layers have been deposited. The Ir layer does not readily form a silicide at 600 C, and thereby prevents the Si from migrating into the top-most Pt layer during future anneals and high-temperature IC operation. The second (i.e., top-most) deposited Pt layer needs to be about 200 nm to enable easy wire bonding. The thickness of 200 nm for Ir was chosen for initial experiments; further optimization of the Ir layer thickness may be possible via further experimentation. Ir itself is not easily wire-bonded because of its hardness and much higher melting point than Pt. Below the iridium layer, the TaSi2 and Pt react and form desired Pt2Si during the post-deposition anneal while above the iridium layer remains pure Pt as desired to facilitate easy and strong wire-bonding to the Si

  15. Equation of state and thermodynamic properties of BCC metals

    Directory of Open Access Journals (Sweden)

    Vu Van Hung, N.T. Hoa

    2017-10-01

    Full Text Available The moment method in statistical dynamics is used to study the equation of state and thermodynamic properties of the bcc metals taking into account the anharmonicity effects of the lattice vibrations and hydrostatic pressures. The explicit expressions of the lattice constant, thermal expansion  oefficient, and the specific heats of the bcc metals are derived within the fourth order moment approximation. The termodynamic quantities of W, Nb, Fe,and Ta metals are calculated as a function of the pressure, and they are in good agreement with the corresponding results obtained from the first principles calculations and experimental results. The effective pair potentials work well for the calculations of bcc metals.

  16. V-stack piezoelectric actuator

    Science.gov (United States)

    Ardelean, Emil V.; Clark, Robert L.

    2001-07-01

    Aeroelastic control of wings by means of a distributed, trailing-edge control surface is of interest with regards to maneuvers, gust alleviation, and flutter suppression. The use of high energy density, piezoelectric materials as motors provides an appealing solution to this problem. A comparative analysis of the state of the art actuators is currently being conducted. A new piezoelectric actuator design is presented. This actuator meets the requirements for trailing edge flap actuation in both stroke and force. It is compact, simple, sturdy, and leverages stroke geometrically with minimum force penalties while displaying linearity over a wide range of stroke. The V-Stack Piezoelectric Actuator, consists of a base, a lever, two piezoelectric stacks, and a pre-tensioning element. The work is performed alternately by the two stacks, placed on both sides of the lever. Pre-tensioning can be readily applied using a torque wrench, obviating the need for elastic elements and this is for the benefit of the stiffness of the actuator. The characteristics of the actuator are easily modified by changing the base or the stacks. A prototype was constructed and tested experimentally to validate the theoretical model.

  17. Silicon-based metallic micro grid for electron field emission

    International Nuclear Information System (INIS)

    Kim, Jaehong; Jeon, Seok-Gy; Kim, Jung-Il; Kim, Geun-Ju; Heo, Duchang; Shin, Dong Hoon; Sun, Yuning; Lee, Cheol Jin

    2012-01-01

    A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 × 80 µm 2 and a thickness of 10 µm is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700 °C are presented. (paper)

  18. Progress in the study of PCHE performance with various stacking methods; PCHEs and test facility

    International Nuclear Information System (INIS)

    Kim, Ji Eun; Kim, Eun Ho; Yoon, Sung Ho; Kim, Moo Hwan; Park, Gun Yeop

    2012-01-01

    Printed Circuit Heat Exchanger (PCHE) is famous with its superior compactness and relatively higher resistance to pressure which came from its manufacturing process. PCHE is made by diffusion bonding of thin metal plates having various flow channel shapes on them. Diffusion bonding makes stack of plates become a monolithic block by grain growth between the surfaces of each plates near the melting temperature of material. With these characteristics, it has become a promising heat exchanger type in oil and gas industry, power plant and chemical reactors fields, despite of its relatively short history than others. From many researches, it is known that the flow channel and the stacking method of plates are the major design factors of PCHE. Flow channels have been studied by relatively many researchers, and there are several well known channel types like zigzag channel, S shape fin, and airfoil fin shape. On the other hands, there is little research about stacking method so called 'bank type'. By Kim et al., it was showed that stacking method of PCHE influences the heat transfer rate and pressure drop, but the comparison of the different stacking method was not conducted. In this research, heat transfer and pressure drop characteristics of PCHEs with various bank types will be studied. And this article will introduce three kinds of PCHEs fabricated by different bank types, and the test facility for performance test of these heat exchangers

  19. Reflector imaging by diffraction stacking with stacking velocity analysis; Jugo sokudo kaiseki wo tomonau sanran jugoho ni yoru hanshamen imaging

    Energy Technology Data Exchange (ETDEWEB)

    Matsushima, J; Rokugawa, S; Kato, Y [The University of Tokyo, Tokyo (Japan). Faculty of Engineering; Yokota, T [Japan National Oil Corp., Tokyo (Japan); Miyazaki, T [Geological Survey of Japan, Tsukuba (Japan)

    1997-10-22

    Concerning seismic reflection survey for geometrical arrangement between pits, the scattering stacking method with stacking velocity analysis is compared with the CDP (common depth point horizontal stacking method). The advantages of the CDP supposedly include the following. Since it presumes an average velocity field, it can determine velocities having stacking effects. The method presumes stratification and, since such enables the division of huge quantities of observed data into smaller groups, more data can be calculated in a shorter time period. The method has disadvantages, attributable to its presuming an average velocity field, that accuracy in processing is lower when the velocity field contrast is higher, that accuracy in processing is low unless stratification is employed, and that velocities obtained from stacking velocity analysis are affected by dipped structures. Such shortcomings may be remedied in the scattering stacking method with stacking velocity analysis. Possibilities are that, as far as the horizontal reflection plane is concerned, it may yield stack records higher in S/N ratio than the CDP. Findings relative to dipped reflection planes will be introduced at the presentation. 6 refs., 12 figs.

  20. Towards stacked zone plates

    International Nuclear Information System (INIS)

    Werner, S; Rehbein, S; Guttman, P; Heim, S; Schneider, G

    2009-01-01

    Fresnel zone plates are the key optical elements for soft and hard x-ray microscopy. For short exposure times and minimum radiation load of the specimen the diffraction efficiency of the zone plate objectives has to be maximized. As the efficiency strongly depends on the height of the diffracting zone structures the achievable aspect ratio of the nanostructures determines these limits. To reach aspect ratios ≥ 20:1 for high efficient optics we propose to superimpose zone plates on top of each other. With this multiplication approach the final aspect ratio is only limited by the number of stacked zone plate layers. For the stack process several nanostructuring process steps have to be developed and/or improved. Our results show for the first time two layers of zone plates stacked on top of each other.

  1. Heteroepitaxial growth of basal plane stacking fault free a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wieneke, Matthias; Hempel, Thomas; Noltemeyer, Martin; Witte, Hartmut; Dadgar, Armin; Blaesing, Juergen; Christen, Juergen; Krost, Alois [Otto-von-Guericke Universitaet Magdeburg, FNW/IEP, Magdeburg (Germany)

    2010-07-01

    Growth of light emitting quantum-wells based on a-plane GaN is a possibility to reduce or even to avoid polarization correlated luminescence red shift and reduction of radiative recombination efficiency. But until now heteroepitaxially grown a-plane GaN films are characterized by a poor crystalline quality expressed by a high density of basal plane stacking faults (BSF) and partial dislocations. We present Si doped a-plane GaN films grown on r-plane sapphire substrates by metal organic vapor phase epitaxy using high temperature AlGaN nucleation layers. FE-SEM images revealed three dimensionally grown GaN crystallites sized up to tenth micrometer in the basal plane and a few tenth micrometers along the c-axes. Though, the full width at half maxima of the X-ray diffraction {omega}-scans of the in-plane GaN(1 anti 100) and GaN(0002) Bragg reflections exhibited a very high crystal quality. Furthermore, luminescence spectra were dominated by near band gap emission, while there was no separated peak of the basal plane stacking fault. In summary we present heteroepitaxially grown a-plane GaN without an evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra.

  2. Consolidated Incineration Facility metals partitioning test

    International Nuclear Information System (INIS)

    Burns, D.B.

    1993-01-01

    Test burns were conducted at Energy and Environmental Research Corporation's rotary kiln simulator, the Solid Waste Incineration Test Facility, using surrogate CIF wastes spiked with hazardous metals and organics. The primary objective for this test program was measuring heavy metals partition between the kiln bottom ash, scrubber blowdown solution, and incinerator stack gas. Also, these secondary waste streams were characterized to determine waste treatment requirements prior to final disposal. These tests were designed to investigate the effect of several parameters on metals partitioning: incineration temperature; waste chloride concentration; waste form (solid or liquid); and chloride concentration in the scrubber water. Tests were conducted at three kiln operating temperatures. Three waste simulants were burned, two solid waste mixtures (paper, plastic, latex, and one with and one without PVC), and a liquid waste mixture (containing benzene and chlorobenzene). Toxic organic and metal compounds were spiked into the simulated wastes to evaluate their fate under various combustion conditions. Kiln offgases were sampled for volatile organic compounds (VOC), semi-volatile organic compounds (SVOC), polychlorinated dibenz[p]dioxins and polychlorinated dibenzofurans (PCDD/PCDF), metals, particulate loading and size distribution, HCl, and combustion products. Stack gas sampling was performed to determine additional treatment requirements prior to final waste disposal. Significant test results are summarized below

  3. Tunable electro-optic filter stack

    Science.gov (United States)

    Fontecchio, Adam K.; Shriyan, Sameet K.; Bellingham, Alyssa

    2017-09-05

    A holographic polymer dispersed liquid crystal (HPDLC) tunable filter exhibits switching times of no more than 20 microseconds. The HPDLC tunable filter can be utilized in a variety of applications. An HPDLC tunable filter stack can be utilized in a hyperspectral imaging system capable of spectrally multiplexing hyperspectral imaging data acquired while the hyperspectral imaging system is airborne. HPDLC tunable filter stacks can be utilized in high speed switchable optical shielding systems, for example as a coating for a visor or an aircraft canopy. These HPDLC tunable filter stacks can be fabricated using a spin coating apparatus and associated fabrication methods.

  4. Forced Air-Breathing PEMFC Stacks

    Directory of Open Access Journals (Sweden)

    K. S. Dhathathreyan

    2012-01-01

    Full Text Available Air-breathing fuel cells have a great potential as power sources for various electronic devices. They differ from conventional fuel cells in which the cells take up oxygen from ambient air by active or passive methods. The air flow occurs through the channels due to concentration and temperature gradient between the cell and the ambient conditions. However developing a stack is very difficult as the individual cell performance may not be uniform. In order to make such a system more realistic, an open-cathode forced air-breathing stacks were developed by making appropriate channel dimensions for the air flow for uniform performance in a stack. At CFCT-ARCI (Centre for Fuel Cell Technology-ARC International we have developed forced air-breathing fuel cell stacks with varying capacity ranging from 50 watts to 1500 watts. The performance of the stack was analysed based on the air flow, humidity, stability, and so forth, The major advantage of the system is the reduced number of bipolar plates and thereby reduction in volume and weight. However, the thermal management is a challenge due to the non-availability of sufficient air flow to remove the heat from the system during continuous operation. These results will be discussed in this paper.

  5. Method for monitoring stack gases for uranium activity

    International Nuclear Information System (INIS)

    Beverly, C.R.; Ernstberger, H.G.

    1988-01-01

    A method for sampling stack gases emanating from the purge cascade of a gaseous diffusion cascade system utilized to enrich uranium for determining the presence and extent of uranium in the stack gases in the form of gaseous uranium hexafluoride, is described comprising the steps of removing a side stream of gases from the stack gases, contacting the side stream of the stack gases with a stream of air sufficiently saturated with moisture for reacting with and converting any gaseous uranium hexafluroide contracted thereby in the side stream of stack gases to particulate uranyl fluoride. Thereafter contacting the side stream of stack gases containing the particulate uranyl fluoride with moving filter means for continuously intercepting and conveying the intercepted particulate uranyl fluoride away from the side stream of stack gases, and continually scanning the moving filter means with radiation monitoring means for sensing the presence and extent of particulate uranyl fluoride on the moving filter means which is indicative of the extent of particulate uranyl fluoride in the side stream of stack gases which in turn is indicative of the presence and extent of uranium hexafluoride in the stack gases

  6. Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy.

    Science.gov (United States)

    Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Polychroniadis, Efstathios K; Stanciu, George A

    2017-07-07

    Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detect silicon carbide defects which are detrimental to device functionality. Our experiment demonstrates that polarization-resolved second harmonic generation microscopy can extend the efficiency of the "optical signature" concept as an all-optical rapid and non-destructive set of investigation methods for the differentiation between hexagonal and cubic stacking faults in silicon carbide. This technique can be used for fast and in situ characterization and optimization of growth conditions for epilayers of silicon carbide and similar materials.

  7. Generalized isothermic lattices

    International Nuclear Information System (INIS)

    Doliwa, Adam

    2007-01-01

    We study multi-dimensional quadrilateral lattices satisfying simultaneously two integrable constraints: a quadratic constraint and the projective Moutard constraint. When the lattice is two dimensional and the quadric under consideration is the Moebius sphere one obtains, after the stereographic projection, the discrete isothermic surfaces defined by Bobenko and Pinkall by an algebraic constraint imposed on the (complex) cross-ratio of the circular lattice. We derive the analogous condition for our generalized isothermic lattices using Steiner's projective structure of conics, and we present basic geometric constructions which encode integrability of the lattice. In particular, we introduce the Darboux transformation of the generalized isothermic lattice and we derive the corresponding Bianchi permutability principle. Finally, we study two-dimensional generalized isothermic lattices, in particular geometry of their initial boundary value problem

  8. Elimination of spurious lattice fermion solutions and noncompact lattice QCD

    Energy Technology Data Exchange (ETDEWEB)

    Lee, T.D.

    1997-09-22

    It is well known that the Dirac equation on a discrete hyper-cubic lattice in D dimension has 2{sup D} degenerate solutions. The usual method of removing these spurious solutions encounters difficulties with chiral symmetry when the lattice spacing l {ne} 0, as exemplified by the persistent problem of the pion mass. On the other hand, we recall that in any crystal in nature, all the electrons do move in a lattice and satisfy the Dirac equation; yet there is not a single physical result that has ever been entangled with a spurious fermion solution. Therefore it should not be difficult to eliminate these unphysical elements. On a discrete lattice, particle hop from point to point, whereas in a real crystal the lattice structure in embedded in a continuum and electrons move continuously from lattice cell to lattice cell. In a discrete system, the lattice functions are defined only on individual points (or links as in the case of gauge fields). However, in a crystal the electron state vector is represented by the Bloch wave functions which are continuous functions in {rvec {gamma}}, and herein lies one of the essential differences.

  9. Metal-free spin and spin-gapless semiconducting heterobilayers: monolayer boron carbonitrides on hexagonal boron nitride.

    Science.gov (United States)

    Pan, Hongzhe; Zhang, Hongyu; Sun, Yuanyuan; Ding, Yingchun; Chen, Jie; Du, Youwei; Tang, Nujiang

    2017-06-07

    The interfaces between monolayer boron carbonitrides and hexagonal boron nitride (h-BN) play an important role in their practical applications. Herein, we respectively investigate the structural and electronic properties of two metal-free heterobilayers constructed by vertically stacking two-dimensional (2D) spintronic materials (B 4 CN 3 and B 3 CN 4 ) on a h-BN monolayer from the viewpoints of lattice match and lattice mismatch models using density functional calculations. It is found that both B 4 CN 3 and B 3 CN 4 monolayers can be stably adsorbed on the h-BN monolayer due to the van der Waals interactions. Intriguingly, we demonstrate that the bipolar magnetic semiconductor (BMS) behavior of the B 4 CN 3 layer and the spin gapless semiconductor (SGS) property of the B 3 CN 4 layer can be well preserved in the B 4 CN 3 /BN and B 3 CN 4 /BN heterobilayers, respectively. The magnetic moments and spintronic properties of the two systems originate mainly from the 2p z electrons of the carbon atoms in the B 4 CN 3 and B 3 CN 4 layers. Furthermore, the BMS behavior of the B 4 CN 3 /BN bilayer is very robust while the electronic property of the B 3 CN 4 /BN bilayer is sensitive to interlayer couplings. These theoretical results are helpful both in understanding the interlayer coupling between B 4 CN 3 or B 3 CN 4 and h-BN monolayers and in providing a possibility of fabricating 2D composite B 4 CN 3 /BN and B 3 CN 4 /BN metal-free spintronic materials theoretically.

  10. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    KAUST Repository

    Fahad, Hossain M.; Smith, Casey; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2011-01-01

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  11. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    KAUST Repository

    Fahad, Hossain M.

    2011-10-12

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  12. Lattice fermions

    Energy Technology Data Exchange (ETDEWEB)

    Randjbar-Daemi, S

    1995-12-01

    The so-called doubling problem in the lattice description of fermions led to a proof that under certain circumstances chiral gauge theories cannot be defined on the lattice. This is called the no-go theorem. It implies that if {Gamma}/sub/A is defined on a lattice then its infrared limit, which should correspond to the quantum description of the classical action for the slowly varying fields on lattice scale, is inevitably a vector like theory. In particular, if not circumvented, the no-go theorem implies that there is no lattice formulation of the Standard Weinberg-Salam theory or SU(5) GUT, even though the fermions belong to anomaly-free representations of the gauge group. This talk aims to explain one possible attempt at bypassing the no-go theorem. 20 refs.

  13. Lattice fermions

    International Nuclear Information System (INIS)

    Randjbar-Daemi, S.

    1995-12-01

    The so-called doubling problem in the lattice description of fermions led to a proof that under certain circumstances chiral gauge theories cannot be defined on the lattice. This is called the no-go theorem. It implies that if Γ/sub/A is defined on a lattice then its infrared limit, which should correspond to the quantum description of the classical action for the slowly varying fields on lattice scale, is inevitably a vector like theory. In particular, if not circumvented, the no-go theorem implies that there is no lattice formulation of the Standard Weinberg-Salam theory or SU(5) GUT, even though the fermions belong to anomaly-free representations of the gauge group. This talk aims to explain one possible attempt at bypassing the no-go theorem. 20 refs

  14. Spin-orbital quantum liquid on the honeycomb lattice

    Science.gov (United States)

    Corboz, Philippe

    2013-03-01

    The symmetric Kugel-Khomskii can be seen as a minimal model describing the interactions between spin and orbital degrees of freedom in transition-metal oxides with orbital degeneracy, and it is equivalent to the SU(4) Heisenberg model of four-color fermionic atoms. We present simulation results for this model on various two-dimensional lattices obtained with infinite projected-entangled pair states (iPEPS), an efficient variational tensor-network ansatz for two dimensional wave functions in the thermodynamic limit. This approach can be seen as a two-dimensional generalization of matrix product states - the underlying ansatz of the density matrix renormalization group method. We find a rich variety of exotic phases: while on the square and checkerboard lattices the ground state exhibits dimer-Néel order and plaquette order, respectively, quantum fluctuations on the honeycomb lattice destroy any order, giving rise to a spin-orbital liquid. Our results are supported from flavor-wave theory and exact diagonalization. Furthermore, the properties of the spin-orbital liquid state on the honeycomb lattice are accurately accounted for by a projected variational wave-function based on the pi-flux state of fermions on the honeycomb lattice at 1/4-filling. In that state, correlations are algebraic because of the presence of a Dirac point at the Fermi level, suggesting that the ground state is an algebraic spin-orbital liquid. This model provides a good starting point to understand the recently discovered spin-orbital liquid behavior of Ba3CuSb2O9. The present results also suggest to choose optical lattices with honeycomb geometry in the search for quantum liquids in ultra-cold four-color fermionic atoms. We acknowledge the financial support from the Swiss National Science Foundation.

  15. Matter waves of Bose-Fermi mixtures in one-dimensional optical lattices

    International Nuclear Information System (INIS)

    Bludov, Yu. V.; Santhanam, J.; Kenkre, V. M.; Konotop, V. V.

    2006-01-01

    We describe solitary wave excitations in a Bose-Fermi mixture loaded in a one-dimensional and strongly elongated lattice. We focus on the mean-field theory under the condition that the fermion number significantly exceeds the boson number, and limit our consideration to lattice amplitudes corresponding to the order of a few recoil energies or less. In such a case, the fermionic atoms display 'metallic' behavior and are well-described by the effective mass approximation. After classifying the relevant cases, we concentrate on gap solitons and coupled gap solitons in the two limiting cases of large and small fermion density, respectively. In the former, the fermionic atoms are distributed almost homogeneously and thus can move freely along the lattice. In the latter, the fermionic density becomes negligible in the potential maxima, and this leads to negligible fermionic current in the linear regime

  16. Flexural characteristics of a stack leg

    International Nuclear Information System (INIS)

    Cook, J.

    1979-06-01

    A 30 MV tandem Van de Graaff accelerator is at present under construction at Daresbury Laboratory. The insulating stack of the machine is of modular construction, each module being 860 mm in length. Each live section stack module contains 8 insulating legs mounted between bulkhead rings. The design, fabrication (from glass discs bonded to stainless steel discs using an epoxy film adhesive) and testing of the stack legs is described. (U.K.)

  17. Ultrafast electron, lattice and spin dynamics on rare earth metal surfaces. Investigated with linear and nonlinear optical techniques

    Energy Technology Data Exchange (ETDEWEB)

    Radu, I.E.

    2006-03-15

    This thesis presents the femtosecond laser-induced electron, lattice and spin dynamics on two representative rare-earth systems: The ferromagnetic gadolinium Gd(0001) and the paramagnetic yttrium Y(0001) metals. The employed investigation tools are the time-resolved linear reflectivity and second-harmonic generation, which provide complementary information about the bulk and surface/interface dynamics, respectively. The femtosecond laser excitation of the exchange-split surface state of Gd(0001) triggers simultaneously the coherent vibrational dynamics of the lattice and spin subsystems in the surface region at a frequency of 3 THz. The coherent optical phonon corresponds to the vibration of the topmost atomic layer against the underlying bulk along the normal direction to the surface. The coupling mechanism between phonons and magnons is attributed to the modulation of the exchange interaction J between neighbour atoms due to the coherent lattice vibration. This leads to an oscillatory motion of the magnetic moments having the same frequency as the lattice vibration. Thus these results reveal a new type of phonon-magnon coupling mediated by the modulation of the exchange interaction and not by the conventional spin-orbit interaction. Moreover, we show that coherent spin dynamics in the THz frequency domain is achievable, which is at least one order of magnitude faster than previously reported. The laser-induced (de)magnetization dynamics of the ferromagnetic Gd(0001) thin films have been studied. Upon photo-excitation, the nonlinear magneto-optics measurements performed in this work show a sudden drop in the spin polarization of the surface state by more than 50% in a <100 fs time interval. Under comparable experimental conditions, the time-resolved photoemission studies reveal a constant exchange splitting of the surface state. The ultrafast decrease of spin polarization can be explained by the quasi-elastic spin-flip scattering of the hot electrons among spin

  18. Size effects of nano-spaced basal stacking faults on the strength and deformation mechanisms of nanocrystalline pure hcp metals

    Science.gov (United States)

    Wang, Wen; Jiang, Ping; Yuan, Fuping; Wu, Xiaolei

    2018-05-01

    The size effects of nano-spaced basal stacking faults (SFs) on the tensile strength and deformation mechanisms of nanocrystalline pure cobalt and magnesium have been investigated by a series of large-scale 2D columnar and 3D molecular dynamics simulations. Unlike the strengthening effect of basal SFs on Mg alloys, the nano-spaced basal SFs are observed to have no strengthening effect on the nanocrystalline pure cobalt and magnesium from MD simulations. These observations could be attributed to the following two reasons: (i) Lots of new basal SFs are formed before (for cobalt) or simultaneously with (for magnesium) the other deformation mechanisms (i.e. the formation of twins and the edge dislocations) during the tensile deformation; (ii) In hcp alloys, the segregation of alloy elements and impurities at typical interfaces, such as SFs, can stablilise them for enhancing the interactions with dislocation and thus elevating the strength. Without such segregation in pure hcp metals, the edge dislocations can cut through the basal SFs although the interactions between the dislocations and the pre-existing SFs/newly formed SFs are observed. The nano-spaced basal SFs are also found to have no restriction effect on the formation of deformation twins.

  19. Time-predictable Stack Caching

    DEFF Research Database (Denmark)

    Abbaspourseyedi, Sahar

    completely. Thus, in systems with hard deadlines the worst-case execution time (WCET) of the real-time software running on them needs to be bounded. Modern architectures use features such as pipelining and caches for improving the average performance. These features, however, make the WCET analysis more...... addresses, provides an opportunity to predict and tighten the WCET of accesses to data in caches. In this thesis, we introduce the time-predictable stack cache design and implementation within a time-predictable processor. We introduce several optimizations to our design for tightening the WCET while...... keeping the timepredictability of the design intact. Moreover, we provide a solution for reducing the cost of context switching in a system using the stack cache. In design of these caches, we use custom hardware and compiler support for delivering time-predictable stack data accesses. Furthermore...

  20. Fracture-mechanical analysis of metal/ceramic composites for applications in high-temperature fuel cells (SOFC); Bruchmechanische Untersuchung von Metall/Keramik-Verbunsystemen fuer die Anwendung in der Hochtemperaturbrennstoffzelle (SOFC)

    Energy Technology Data Exchange (ETDEWEB)

    Kuhn, Bernd Josef

    2008-08-25

    The author investigated the deformation and damage behaviour of soldered ceramic/metal joints in SOFC stacks, using thermochemical methods. Methods for analyzing sandwich systems and for mechanical characterization of joints were adapted and modified in order to provide fundamental understanding of the mechanical properties of soldered joints. [German] In dieser Arbeit wurde das Verformungs- und Schaedigungsverhalten von Keramik/ Metall-Loetverbindungen fuer SOFC-Stacks thermomechanisch untersucht. Verfahren zur Analyse von Schichtsystemen und fuer die mechanische Charakterisierung von Fuegeverbindungen wurden adaptiert und weiterentwickelt, um zu einem grundlegenden Verstaendnis der mechanischen Eigenschaften von Loetverbindungen zu gelangen.

  1. Principles for Instructional Stack Development in HyperCard.

    Science.gov (United States)

    McEneaney, John E.

    The purpose of this paper is to provide information about obtaining and using HyperCard stacks that introduce users to principles of stack development. The HyperCard stacks described are available for downloading free of charge from a server at Indiana University South Bend. Specific directions are given for stack use, with advice for beginners. A…

  2. Nature of interstitially induced lattice strains

    International Nuclear Information System (INIS)

    Emin, D.

    1978-01-01

    The addition of interstitial atoms to a metal lattice has been likened to the addition of extra billiard balls to an array of tangentially touching billiard balls. In such a picture the increased clustering of interstitials can lead to the buildup of larger and larger strain fields which ultimately are associated with the production of broken bonds. Simple models of the strain fields associated with the addition of particles to a lattice in which the force exerted between the added atoms and host atoms is finite have been studied. From these studies one can define situations in which the billiard-ball approach has qualitative validity and those in which it is inappropriate. Basically, those situations in which the displacements of the host atoms can be represented as involving acoustic phonons yield long-range strain fields analogous to those of the billiard-ball model with the radius of the extra billiard ball being determined by the stiffness of the host lattice and the forces between the added atom and the surrounding host atoms. If the displacements produced by the added atoms are represented as involving primarily optical phonons the displacement pattern is short-ranged and not described by the usual elasticity theory. For example, Vegard's law does not apply in these instances. Such concerns arise in considering the strains induced by interstitial helium in tritides

  3. Coupling effect of topological states and Chern insulators in two-dimensional triangular lattices

    Science.gov (United States)

    Zhang, Jiayong; Zhao, Bao; Xue, Yang; Zhou, Tong; Yang, Zhongqin

    2018-03-01

    We investigate topological states of two-dimensional (2D) triangular lattices with multiorbitals. Tight-binding model calculations of a 2D triangular lattice based on px and py orbitals exhibit very interesting doubly degenerate energy points at different positions (Γ and K /K' ) in momentum space, with quadratic non-Dirac and linear Dirac band dispersions, respectively. Counterintuitively, the system shows a global topologically trivial rather than nontrivial state with consideration of spin-orbit coupling due to the "destructive interference effect" between the topological states at the Γ and K /K' points. The topologically nontrivial state can emerge by introducing another set of triangular lattices to the system (bitriangular lattices) due to the breakdown of the interference effect. With first-principles calculations, we predict an intrinsic Chern insulating behavior (quantum anomalous Hall effect) in a family of the 2D triangular lattice metal-organic framework of Co(C21N3H15) (TPyB-Co) from this scheme. Our results provide a different path and theoretical guidance for the search for and design of new 2D topological quantum materials.

  4. Monte Carlo analysis of TRX lattices with ENDF/B version 3 data

    International Nuclear Information System (INIS)

    Hardy, J. Jr.

    1975-01-01

    Four TRX water-moderated lattices of slightly enriched uranium rods have been reanalyzed with consistent ENDF/B Version 3 data by means of the full-range Monte Carlo program RECAP. The following measured lattice parameters were studied: ratio of epithermal-to-thermal 238 U capture, ratio of epithermal-to-thermal 235 U fissions, ration of 238 U captures to 235 U fissions, ratio of 238 U fissions to 235 U fissions, and multiplication factor. In addition to the base calculations, some studies were done to find sensitivity of the TRX lattice parameters to selected variations of cross section data. Finally, additional experimental evidence is afforded by effective 238 U capture integrals for isolated rods. Shielded capture integrals were calculated for 238 U metal and oxide rods. These are compared with other measurements

  5. Use of the Primitive Unit Cell in Understanding Subtle Features of the Cubic Closest-Packed Structure

    Science.gov (United States)

    Hawkins, John A.; Rittenhouse, Jeffrey L.; Soper, Linda M.; Rittenhouse, Robert C.

    2008-01-01

    One of the most important crystal structures adopted by metals is characterized by the "abcabc"...stacking of close-packed layers. This structure is commonly referred to in textbooks as the cubic close-packed (ccp) or face-centered cubic (fcc) structure, since the entire lattice can be generated by replication of a face-centered cubic unit cell…

  6. DBaaS with OpenStack Trove

    CERN Document Server

    Giardini, Andrea

    2013-01-01

    The purpose of the project was to evaluate the Trove component for OpenStack, understand if it can be used with the CERN infrastructure and report the benefits and disadvantages of this software. Currently, databases for CERN projects are provided by a DbaaS software developed inside the IT-DB group. This solution works well with the actual infrastructure but it is not easy to maintain. With the migration of the CERN infrastructure to OpenStack the Database group started to evaluate the Trove component. Instead of mantaining an own DbaaS service it can be interesting to migrate everything to OpenStack and replace the actual DbaaS software with Trove. This way both virtual machines and databases will be managed by OpenStack itself.

  7. On the idea of low-energy nuclear reactions in metallic lattices by producing neutrons from protons capturing "heavy" electrons

    Science.gov (United States)

    Tennfors, Einar

    2013-02-01

    The present article is a critical comment on Widom and Larsens speculations concerning low-energy nuclear reactions (LENR) based on spontaneous collective motion of protons in a room temperature metallic hydride lattice producing oscillating electric fields that renormalize the electron self-energy, adding significantly to the effective electron mass and enabling production of low-energy neutrons. The frequency and mean proton displacement estimated on the basis of neutron scattering from protons in palladium and applied to the Widom and Larsens model of the proton oscillations yield an electron mass enhancement less than one percent, far below the threshold for the proposed neutron production and even farther below the mass enhancement obtained by Widom and Larsen assuming a high charge density. Neutrons are not stopped by the Coulomb barrier, but the energy required for the neutron production is not low.

  8. Lattice location of Mn in GaAs and GaN

    CERN Document Server

    De Coster, Arnaud; Vantomme, André; Temst, Kristiaan

    The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the link between magnetic and conducting properties and with an eye to potential applications in computer technology. While the presence of semiconducting properties and magnetism in a given material is not out of the ordinary, DMS materials stand out because the charge carriers actually mediate between magnetic moments in the lattice, causing the ferromagnetic ordering. These magnetic moments and charge carriers are supplied by transition-metal (TM) dopants in a classic semiconductor. The location where these dopants are incorporated will determine if they will act as either an acceptor or donor and how they will couple to other magnetic moments. Hence, in order to achieve a better understanding of DMS, accurate knowledge of the lattice location the TM takes up in the crystal is vital. In this thesis the lattice location of Mn in GaAs and GaN is studied, two model materials...

  9. Stacking Faults and Mechanical Behavior beyond the Elastic Limit of an Imidazole-Based Metal Organic Framework: ZIF-8.

    Science.gov (United States)

    Hegde, Vinay I; Tan, Jin-Chong; Waghmare, Umesh V; Cheetham, Anthony K

    2013-10-17

    We determine the nonlinear mechanical behavior of a prototypical zeolitic imidazolate framework (ZIF-8) along two modes of mechanical failure in response to tensile and shear forces using first-principles simulations. Our generalized stacking fault energy surface reveals an intrinsic stacking fault of surprisingly low energy comparable to that in copper, though the energy barrier associated with its formation is much higher. The lack of vibrational spectroscopic evidence for such faults in experiments can be explained with the structural instability of the barrier state to form a denser and disordered state of ZIF-8 seen in our analysis, that is, large shear leads to its amorphization rather than formation of faults.

  10. Stacking the Equiangular Spiral

    OpenAIRE

    Agrawal, A.; Azabi, Y. O.; Rahman, B. M.

    2013-01-01

    We present an algorithm that adapts the mature Stack and Draw (SaD) methodology for fabricating the exotic Equiangular Spiral Photonic Crystal Fiber. (ES-PCF) The principle of Steiner chains and circle packing is exploited to obtain a non-hexagonal design using a stacking procedure based on Hexagonal Close Packing. The optical properties of the proposed structure are promising for SuperContinuum Generation. This approach could make accessible not only the equiangular spiral but also other qua...

  11. Lattice gauge theory

    International Nuclear Information System (INIS)

    Mack, G.

    1982-01-01

    After a description of a pure Yang-Mills theory on a lattice, the author considers a three-dimensional pure U(1) lattice gauge theory. Thereafter he discusses the exact relation between lattice gauge theories with the gauge groups SU(2) and SO(3). Finally he presents Monte Carlo data on phase transitions in SU(2) and SO(3) lattice gauge models. (HSI)

  12. Stochastic stacking without filters

    International Nuclear Information System (INIS)

    Johnson, R.P.; Marriner, J.

    1982-12-01

    The rate of accumulation of antiprotons is a critical factor in the design of p anti p colliders. A design of a system to accumulate higher anti p fluxes is presented here which is an alternative to the schemes used at the CERN AA and in the Fermilab Tevatron I design. Contrary to these stacking schemes, which use a system of notch filters to protect the dense core of antiprotons from the high power of the stack tail stochastic cooling, an eddy current shutter is used to protect the core in the region of the stack tail cooling kicker. Without filters one can have larger cooling bandwidths, better mixing for stochastic cooling, and easier operational criteria for the power amplifiers. In the case considered here a flux of 1.4 x 10 8 per sec is achieved with a 4 to 8 GHz bandwidth

  13. Stacking fault density as engineering criterion for resistance to radiation swelling of alloys' FCC- and BCC-lattice

    International Nuclear Information System (INIS)

    Zheltov, Yu.V.; Ageev, V.S.; Kolesnikov, Yu.G.

    1990-01-01

    The experimental data on influence of Mn, Cr, Ni, P, B, Ce alloying in austenitic and simultaneously Nb, V, B alloying in ferritic steels and also heat treatment on stacking fault density (SFD) are represented. In all cases besides influence of Cr in austenitic steel the increase of SFD is shown. The decrease of radiation swelling of industrial steels at the increase of their SFD, measured by X-rays, was studied. The tendency of increase of relative radiation swelling change at SFD increase at relative fluence rise is verified. It is shown that SFD may be a perspective proximate characteristics of choice of radiation-resistant steel melts within one steel quality. 14 refs.; 4 figs. (author)

  14. Ammonia nanotubes and their interactions with coinage metals

    Energy Technology Data Exchange (ETDEWEB)

    Mohajeri, Afshan, E-mail: amohajeri@shirazu.ac.ir; Bozorgizadeh, Tahereh

    2014-09-30

    Highlights: • The possibility of building ammonia nanotubes (ANTs) is explored. • Six ANTs formed by the stacks of 4- and 5-membered ammonia rings have been studied. • The interactions between the ANTs and coinage metals are investigated. • The nature of nitrogen–metal bonds is unveiled by quantum chemical approaches. - Abstract: The hydrogen bond networks of finite ammonia molecules are considered to explore the possibility of building ammonia nanotubes (ANTs). Six ANTs formed by the stacks of 4- and 5-membered ammonia rings have been studied. The calculated stabilization energies indicate considerable stability for ANTs. In the second part, the interactions between the constructed ANTs and coinage metals (M = Cu, Ag, and Au) are investigated with a focus on the nature of nitrogen…metal bonds. The changes in binding energies from copper to gold reveal that the three metals have almost similar tendency for the interaction with ANTs and the interaction strength is governed by the structure of ANT. Furthermore, the electronic and structural properties of the resulting complexes have been unveiled by means of the quantum chemical analyses. The N…M bonds are found to have partially covalent and partially electrostatic nature.

  15. Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu{sub x}O and HfO{sub 2}/SiO{sub 2} high-{kappa} stack gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Zou Xiao [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Department of Electromachine Engineering, Jianghan University, Wuhan, 430056 (China); Fang Guojia, E-mail: gjfang@whu.edu.c [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China); Yuan Longyan; Liu Nishuang; Long Hao; Zhao Xingzhong [Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan, 430074 (China)

    2010-05-31

    Polycrystalline p-type Cu{sub x}O films were deposited after the growth of HfO{sub 2} dielectric on Si substrate by pulsed laser deposition, and Cu{sub x}O metal-oxide-semiconductor (MOS) capacitors with HfO{sub 2}/SiO{sub 2} stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline structure and Cu{sup +}/Cu{sup 2+} ratios of Cu{sub x}O films respectively. SiO{sub 2} interlayer formed between the high-{kappa} dielectric and substrate was estimated by the transmission electron microscope. Results of electrical characteristic measurement indicate that the permittivity of HfO{sub 2} is about 22, and the gate leakage current density of MOS capacitor with 11.3 nm HfO{sub 2}/SiO{sub 2} stack dielectrics is {approx} 10{sup -4} A/cm{sup 2}. Results also show that the annealing in N{sub 2} can improve the quality of Cu{sub x}O/HfO{sub 2} interface and thus reduce the gate leakage density.

  16. Strength analysis and modeling of cellular lattice structures manufactured using selective laser melting for tooling applications

    DEFF Research Database (Denmark)

    Mahshid, Rasoul; Hansen, Hans Nørgaard; Loft Højbjerre, Klaus

    2016-01-01

    Additive manufacturing is rapidly developing and gaining popularity for direct metal fabrication systems like selective laser melting (SLM). The technology has shown significant improvement for high-quality fabrication of lightweight design-efficient structures such as conformal cooling channels...... in injection molding tools and lattice structures. This research examines the effect of cellular lattice structures on the strength of workpieces additively manufactured from ultra high-strength steel powder. Two commercial SLM machines are used to fabricate cellular samples based on four architectures— solid......, hollow, lattice structure and rotated lattice structure. Compression test is applied to the specimens while they are deformed. The analytical approach includes finite element (FE), geometrical and mathematical models for prediction of collapse strength. The results from the the models are verified...

  17. Assessing Elementary Algebra with STACK

    Science.gov (United States)

    Sangwin, Christopher J.

    2007-01-01

    This paper concerns computer aided assessment (CAA) of mathematics in which a computer algebra system (CAS) is used to help assess students' responses to elementary algebra questions. Using a methodology of documentary analysis, we examine what is taught in elementary algebra. The STACK CAA system, http://www.stack.bham.ac.uk/, which uses the CAS…

  18. Learning OpenStack networking (Neutron)

    CERN Document Server

    Denton, James

    2014-01-01

    If you are an OpenStack-based cloud operator with experience in OpenStack Compute and nova-network but are new to Neutron networking, then this book is for you. Some networking experience is recommended, and a physical network infrastructure is required to provide connectivity to instances and other network resources configured in the book.

  19. Consolidity: Stack-based systems change pathway theory elaborated

    Directory of Open Access Journals (Sweden)

    Hassen Taher Dorrah

    2014-06-01

    Full Text Available This paper presents an elaborated analysis for investigating the stack-based layering processes during the systems change pathway. The system change pathway is defined as the path resulting from the combinations of all successive changes induced on the system when subjected to varying environments, activities, events, or any excessive internal or external influences and happenings “on and above” its normal stands, situations or set-points during its course of life. The analysis is essentially based on the important overall system paradigm of “Time driven-event driven-parameters change”. Based on this paradigm, it is considered that any affected activity, event or varying environment is intelligently self-recorded inside the system through an incremental consolidity-scaled change in system parameters of the stack-based layering types. Various joint stack-based mathematical and graphical approaches supported by representable case studies are suggested for the identification, extraction, and processing of various stack-based systems changes layering of different classifications and categorizations. Moreover, some selected real life illustrative applications are provided to demonstrate the (infinite stack-based identification and recognition of the change pathway process in the areas of geology, archeology, life sciences, ecology, environmental science, engineering, materials, medicine, biology, sociology, humanities, and other important fields. These case studies and selected applications revealed that there are general similarities of the stack-based layering structures and formations among all the various research fields. Such general similarities clearly demonstrate the global concept of the “fractals-general stacking behavior” of real life systems during their change pathways. Therefore, it is recommended that concentrated efforts should be expedited toward building generic modular stack-based systems or blocks for the mathematical

  20. A unified picture of the crystal structures of metals

    Science.gov (United States)

    Söderlind, Per; Eriksson, Olle; Johansson, Börje; Wills, J. M.; Boring, A. M.

    1995-04-01

    THE crystal structures of the light actinides have intrigued physicists and chemists for several decades1. Simple metals and transition metals have close-packed, high-symmetry structures, such as body-centred cubic, face-centred cubic and hexagonal close packing. In contrast, the structures of the light actinides are very loosely packed and of low symmetry-tetragonal, orthorhombic and monoclinic. To understand these differences, we have performed total-energy calculations, as a function of volume, for both high-and low-symmetry structures of a simple metal (aluminium), a non-magnetic transition metal (niobium), a ferromagnetic transition metal (iron) and a light actinide (uranium). We find that the crystal structure of all of these metals is determined by the balance between electrostatic (Madelung) interactions, which favour high symmetry, and a Peierls distortion of the crystal lattice, which favours low symmetry. We show that simple metals and transition metals can adopt low-symmetry structures on expansion of the lattice; and we predict that, conversely, the light actinides will undergo transitions to structures of higher symmetry on compression.

  1. A unified picture of the crystal structures of metals

    International Nuclear Information System (INIS)

    Soederlind, P.; Eriksson, O.; Johansson, B.; Wills, J.M.; Boring, A.M.

    1995-01-01

    The crystal structures of the light actinides have intrigued physicists and chemists for several decades. Simple metals and transition metals have close-packed, high-symmetry structures, such as body-centred cubic, face-centred cubic hexagonal close packing. In contrast, the structures of the light actinides are very loosely packed and of low symmetry -tetragonal, orthorhombic and monoclinic. To understand these differences, we have have performed total-energy calculations, as a function of volume, for both high- and low-symmetry structures of a simple metal (aluminium), a non-magnetic transition metal (niobium), a ferromagnetic transition metal (iron) and a light actinide (uranium). We find that the crystal structure of all these metals is determined by the balance between electrostatic (Madelung) interactions, which favour high symmetry, and a Peierls distortion of the crystal lattice, which favours low symmetry. We show that simple metals and transition metals can adopt low-symmetry structures on expansion of the lattice; and we predict that, conversely, the light actinides will undergo transitions to structures of higher symmetry on compression. (author)

  2. Glassy carbon based supercapacitor stacks

    Energy Technology Data Exchange (ETDEWEB)

    Baertsch, M; Braun, A; Koetz, R; Haas, O [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-06-01

    Considerable effort is being made to develop electrochemical double layer capacitors (EDLC) that store relatively large quantities of electrical energy and possess at the same time a high power density. Our previous work has shown that glassy carbon is suitable as a material for capacitor electrodes concerning low resistance and high capacity requirements. We present the development of bipolar electrochemical glassy carbon capacitor stacks of up to 3 V. Bipolar stacks are an efficient way to meet the high voltage and high power density requirements for traction applications. Impedance and cyclic voltammogram measurements are reported here and show the frequency response of a 1, 2, and 3 V stack. (author) 3 figs., 1 ref..

  3. Finite element method analysis of band gap and transmission of two-dimensional metallic photonic crystals at terahertz frequencies.

    Science.gov (United States)

    Degirmenci, Elif; Landais, Pascal

    2013-10-20

    Photonic band gap and transmission characteristics of 2D metallic photonic crystals at THz frequencies have been investigated using finite element method (FEM). Photonic crystals composed of metallic rods in air, in square and triangular lattice arrangements, are considered for transverse electric and transverse magnetic polarizations. The modes and band gap characteristics of metallic photonic crystal structure are investigated by solving the eigenvalue problem over a unit cell of the lattice using periodic boundary conditions. A photonic band gap diagram of dielectric photonic crystal in square lattice array is also considered and compared with well-known plane wave expansion results verifying our FEM approach. The photonic band gap designs for both dielectric and metallic photonic crystals are consistent with previous studies obtained by different methods. Perfect match is obtained between photonic band gap diagrams and transmission spectra of corresponding lattice structure.

  4. pH-specific hydrothermal assembly of binary and ternary Pb(II)-(O,N-carboxylic acid) metal organic framework compounds: correlation of aqueous solution speciation with variable dimensionality solid-state lattice architecture and spectroscopic signatures.

    Science.gov (United States)

    Gabriel, C; Perikli, M; Raptopoulou, C P; Terzis, A; Psycharis, V; Mateescu, C; Jakusch, T; Kiss, T; Bertmer, M; Salifoglou, A

    2012-09-03

    Hydrothermal pH-specific reactivity in the binary/ternary systems of Pb(II) with the carboxylic acids N-hydroxyethyl-iminodiacetic acid (Heida), 1,3-diamino-2-hydroxypropane-N,N,N',N'-tetraacetic acid (Dpot), and 1,10-phenanthroline (Phen) afforded the new well-defined crystalline compounds [Pb(Heida)](n)·nH(2)O(1), [Pb(Phen)(Heida)]·4H(2)O(2), and [Pb(3)(NO(3))(Dpot)](n)(3). All compounds were characterized by elemental analysis, FT-IR, solution or/and solid-state NMR, and single-crystal X-ray diffraction. The structures in 1-2 reveal the presence of a Pb(II) center coordinated to one Heida ligand, with 1 exhibiting a two-dimensional (2D) lattice extending to a three-dimensional (3D) one through H-bonding interactions. The concurrent aqueous speciation study of the binary Pb(II)-Heida system projects species complementing the synthetic efforts, thereby lending credence to a global structural speciation strategy in investigating binary/ternary Pb(II)-Heida/Phen systems. The involvement of Phen in 2 projects the significance of nature and reactivity potential of N-aromatic chelators, disrupting the binary lattice in 1 and influencing the nature of the ultimately arising ternary 3D lattice. 3 is a ternary coordination polymer, where Pb(II)-Dpot coordination leads to a 2D metal-organic-framework material with unique architecture. The collective physicochemical properties of 1-3 formulate the salient features of variable dimensionality metal-organic-framework lattices in binary/ternary Pb(II)-(hydroxy-carboxylate) structures, based on which new Pb(II) materials with distinct architecture and spectroscopic signature can be rationally designed and pursued synthetically.

  5. The growth of noble metals in (112-bar0)-oriented hexagonal close-packed nano-films by epitaxy on Nb(001)

    International Nuclear Information System (INIS)

    Hueger, E.; Osuch, K.

    2005-01-01

    The morphology and crystal structure of noble metal nano-films deposited on oxygen contaminated and oxygen-free Nb(001) surfaces have been studied with angle-resolved ultraviolet photoelectron spectroscopy, X-ray photo-electron diffraction, and reflection high energy electron diffraction. In the both cases a deposited noble metal film aligns its direction with the [110] direction of the Nb(001) surface. But, while a noble metal grows on an oxygen contaminated Nb(001) surface with the hexagonal close-packed (hcp) (111) planes parallel to the surface (i.e. in the (111)-oriented face centred cubic phase (fcc)), on a non-contaminated Nb(001) it grows with its hcp planes perpendicular to the surface. The latter happens because in the initial stages of the epitaxy the first two monolayers (MLs) of the noble metal grow pseudomorphically on a contamination-free Nb(001). The pseudomorphic layer is strongly extended parallel to the Nb(001) surface in comparison to its natural fcc (001) plane. As a consequence of the atomic volume conservation principle the out-of-plane lattice of the pseudomorphic layer is contracted. Thus, its body centred tetragonal (110) planes, which stay perpendicular to the surface, contract into denser-packed planes, i.e. in hcp ones. In the direction perpendicular to the surface, where the substrate does not have a direct influence on the film, the pseudomorphic layer relaxes into its natural close-packed phase, i.e. into hcp atomic planes. These planes appear as soon as the third pseudomorphic ML begins to grow. The stacking axis of the planes lies in the (100) surface of Nb and is locked by it. The fact that thick nano-films of Cu (up to 50 MLs), Ag and Au (up to 100 MLs) grow in the (112-bar0)-oriented hcp phase can be attributed to a much better fit of the hcp than of fcc stacking sequence to the four-fold symmetry of the Nb(001) surface

  6. Status of MCFC stack technology at IHI

    Energy Technology Data Exchange (ETDEWEB)

    Hosaka, M.; Morita, T.; Matsuyama, T.; Otsubo, M. [Ishikawajima-Harima Heavy Industries Co., Ltd., Tokyo (Japan)

    1996-12-31

    The molten carbonate fuel cell (MCFC) is a promising option for highly efficient power generation possible to enlarge. IHI has been studying parallel flow MCFC stacks with internal manifolds that have a large electrode area of 1m{sup 2}. IHI will make two 250 kW stacks for MW plant, and has begun to make cell components for the plant. To improve the stability of stack, soft corrugated plate used in the separator has been developed, and a way of gathering current from stacks has been studied. The DC output potential of the plant being very high, the design of electric insulation will be very important. A 20 kW short stack test was conducted in 1995 FY to certificate some of the improvements and components of the MW plant. These activities are presented below.

  7. Dynamical stability of slip-stacking particles

    Energy Technology Data Exchange (ETDEWEB)

    Eldred, Jeffrey; Zwaska, Robert

    2014-09-01

    We study the stability of particles in slip-stacking configuration, used to nearly double proton beam intensity at Fermilab. We introduce universal area factors to calculate the available phase space area for any set of beam parameters without individual simulation. We find perturbative solutions for stable particle trajectories. We establish Booster beam quality requirements to achieve 97% slip-stacking efficiency. We show that slip-stacking dynamics directly correspond to the driven pendulum and to the system of two standing-wave traps moving with respect to each other.

  8. Optimization of the polarized Klein tunneling currents in a sub-lattice: pseudo-spin filters and latticetronics in graphene ribbons.

    Science.gov (United States)

    López, Luis I A; Yaro, Simeón Moisés; Champi, A; Ujevic, Sebastian; Mendoza, Michel

    2014-02-12

    We found that with an increase of the potential barrier applied to metallic graphene ribbons, the Klein tunneling current decreases until it is totally destroyed and the pseudo-spin polarization increases until it reaches its maximum value when the current is zero. This inverse relation disfavors the generation of polarized currents in a sub-lattice. In this work we discuss the pseudo-spin control (polarization and inversion) of the Klein tunneling currents, as well as the optimization of these polarized currents in a sub-lattice, using potential barriers in metallic graphene ribbons. Using density of states maps, conductance results, and pseudo-spin polarization information (all of them as a function of the energy V and width of the barrier L), we found (V, L) intervals in which the polarized currents in a given sub-lattice are maximized. We also built parallel and series configurations with these barriers in order to further optimize the polarized currents. A systematic study of these maps and barrier configurations shows that the parallel configurations are good candidates for optimization of the polarized tunneling currents through the sub-lattice. Furthermore, we discuss the possibility of using an electrostatic potential as (i) a pseudo-spin filter or (ii) a pseudo-spin inversion manipulator, i.e. a possible latticetronic of electronic currents through metallic graphene ribbons. The results of this work can be extended to graphene nanostructures.

  9. Buckling and reaction rate measurements in graphite moderated lattices fuelled with plutonium-uranium oxide clusters at temperatures up to 400 deg. C

    International Nuclear Information System (INIS)

    Carter, D.H.; Gibson, M.; King, D.C.; Marshall, J.; Puckett, B.J.; Richards, A.E.; Wass, T.; Wilson, D.J.

    1965-07-01

    The Report describes a series of experiments carried out in SCORPIO I and II on sub-critical graphite moderated lattices fuelled with 21-rod clusters of PuO 2 /UO 2 fuel. Three fuel batches with nominal plutonium: uranium ratios of 0.25%, 0.8% and 1.2% were investigated at temperatures between 20 deg. C and 400 deg. C. Because of the limited amounts of the three fuels, exponential measurements were made in 2-zone stacks, the outer regions of which were loaded with suitably matched 'reference fuel'. Fine structure distributions in the lattice cell were obtained with manganese and indium foils. Pu239/U235 fission ratios were determined both by fission chambers and by fission-product counting techniques. (author)

  10. Defect-impurity interactions in ion-implanted metals

    International Nuclear Information System (INIS)

    Turos, A.

    1986-01-01

    An overview of defect-impurity interactions in metals is presented. When point defects become mobile they migrate towards the sinks and on the way can be captured by impurity atoms forming stable associations so-called complexes. In some metallic systems complexes can also be formed athermally during ion implantation by trapping point defects already in the collision cascade. An association of a point defect with an impurity atom leads to its displacement from the lattice site. The structure and stability of complexes are strongly temperature dependent. With increasing temperature they dissociate or grow by multiple defect trapping. The appearance of freely migrating point defects at elevated temperatures, due to ion bombardment or thermal annealing, causes via coupling with defect fluxes, important impurity redistribution. Because of the sensitivity of many metal-in-metal implanted systems to radiation damage the understanding of this processes is essential for a proper interpretation of the lattice occupancy measurements and the optimization of implantation conditions. (author)

  11. Area of Lattice Polygons

    Science.gov (United States)

    Scott, Paul

    2006-01-01

    A lattice is a (rectangular) grid of points, usually pictured as occurring at the intersections of two orthogonal sets of parallel, equally spaced lines. Polygons that have lattice points as vertices are called lattice polygons. It is clear that lattice polygons come in various shapes and sizes. A very small lattice triangle may cover just 3…

  12. Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition Metal Dichalcogenides

    KAUST Repository

    Aljarb, Areej

    2017-08-07

    Two-dimensional (2D) transition metal dichalcogenide (TMDCs) semiconductors are important for next-generation electronics and optoelectronics. Given the difficulty in growing large single crystals of 2D TMDC materials, understanding the factors affecting the seed formation and orientation becomes an important issue for controlling the growth. Here, we systematically study the growth of molybdenum disulfide (MoS2) monolayer on c-plane sapphire with chemical vapor deposition (CVD) to discover the factors controlling their orientation. We show that the concentration of precursors, i.e., the ratio between sulfur and molybdenum oxide (MoO3), plays a key role in the size and orientation of seeds, subsequently controlling the orientation of MoS2 monolayers. High S/MoO3 ratio is needed in the early stage of growth to form small seeds that can align easily to the substrate lattice structures while the ratio should be decreased to enlarge the size of the monolayer at the next stage of the lateral growth. Moreover, we show that the seeds are actually crystalline MoS2 layers as revealed by high-resolution transmission electron microscopy. There exist two preferred orientations (0° or 60°) registered on sapphire, confirmed by our density functional theory (DFT) simulation. This report offers a facile technique to grow highly aligned 2D TMDCs and contributes to knowledge advancement in growth mechanism.

  13. Spherical Torus Center Stack Design

    International Nuclear Information System (INIS)

    C. Neumeyer; P. Heitzenroeder; C. Kessel; M. Ono; M. Peng; J. Schmidt; R. Woolley; I. Zatz

    2002-01-01

    The low aspect ratio spherical torus (ST) configuration requires that the center stack design be optimized within a limited available space, using materials within their established allowables. This paper presents center stack design methods developed by the National Spherical Torus Experiment (NSTX) Project Team during the initial design of NSTX, and more recently for studies of a possible next-step ST (NSST) device

  14. Effect of three-body forces on the lattice dynamics of noble metals

    Indian Academy of Sciences (India)

    A simple method to generate an effective electron–ion interaction pseudopotential from the energy wave number characteristic obtained by first principles calculations has been suggested. This effective potential has been used, in third order perturbation, to study the effect of three-body forces on the lattice dynamics of ...

  15. The untyped stack calculus and Bohm's theorem

    Directory of Open Access Journals (Sweden)

    Alberto Carraro

    2013-03-01

    Full Text Available The stack calculus is a functional language in which is in a Curry-Howard correspondence with classical logic. It enjoys confluence but, as well as Parigot's lambda-mu, does not admit the Bohm Theorem, typical of the lambda-calculus. We present a simple extension of stack calculus which is for the stack calculus what Saurin's Lambda-mu is for lambda-mu.

  16. Buckling and reaction rate experiments in plutonium/uranium metal fuelled, graphite moderated lattices at temperatures up to 400 deg. C. Part I: Experimental techniques and results

    Energy Technology Data Exchange (ETDEWEB)

    Carter, D H; Clarke, W G; Gibson, M; Hobday, R; Hunt, C; Marshall, J; Puckett, B J; Symons, C R; Wass, T [General Reactor Physics Division, Atomic Energy Establishment, Winfrith, Dorchester, Dorset (United Kingdom)

    1964-07-15

    This report presents experimental measurements of bucklings, flux fine structure and fission rate distributions in graphite moderated lattices fuelled with plutonium/uranium metal at temperatures up to 400 deg. C in the sub-critical assemblies SCORPIO I and SCORPIO II. The experimental techniques employed are described in some detail. The accuracy of the experimental measurements appears to be adequate for testing methods of calculation being developed for the calculation of reactivity and temperature coefficient of reactivity for power reactors containing plutonium and uranium. (author) 26 refs, 17 tabs, 17 figs

  17. Full Piezoelectric Multilayer-Stacked Hybrid Actuation/Transduction Systems

    Science.gov (United States)

    Su, Ji; Jiang, Xiaoning; Zu, Tian-Bing

    2011-01-01

    The Stacked HYBATS (Hybrid Actuation/Transduction system) demonstrates significantly enhanced electromechanical performance by using the cooperative contributions of the electromechanical responses of multilayer, stacked negative strain components and positive strain components. Both experimental and theoretical studies indicate that, for Stacked HYBATS, the displacement is over three times that of a same-sized conventional flextensional actuator/transducer. The coupled resonance mode between positive strain and negative strain components of Stacked HYBATS is much stronger than the resonance of a single element actuation only when the effective lengths of the two kinds of elements match each other. Compared with the previously invented hybrid actuation system (HYBAS), the multilayer Stacked HYBATS can be designed to provide high mechanical load capability, low voltage driving, and a highly effective piezoelectric constant. The negative strain component will contract, and the positive strain component will expand in the length directions when an electric field is applied on the device. The interaction between the two elements makes an enhanced motion along the Z direction for Stacked-HYBATS. In order to dominate the dynamic length of Stacked-HYBATS by the negative strain component, the area of the cross-section for the negative strain component will be much larger than the total cross-section areas of the two positive strain components. The transverse strain is negative and longitudinal strain positive in inorganic materials, such as ceramics/single crystals. Different piezoelectric multilayer stack configurations can make a piezoelectric ceramic/single-crystal multilayer stack exhibit negative strain or positive strain at a certain direction without increasing the applied voltage. The difference of this innovation from the HYBAS is that all the elements can be made from one-of-a-kind materials. Stacked HYBATS can provide an extremely effective piezoelectric

  18. Simple Stacking Methods for Silicon Micro Fuel Cells

    Directory of Open Access Journals (Sweden)

    Gianmario Scotti

    2014-08-01

    Full Text Available We present two simple methods, with parallel and serial gas flows, for the stacking of microfabricated silicon fuel cells with integrated current collectors, flow fields and gas diffusion layers. The gas diffusion layer is implemented using black silicon. In the two stacking methods proposed in this work, the fluidic apertures and gas flow topology are rotationally symmetric and enable us to stack fuel cells without an increase in the number of electrical or fluidic ports or interconnects. Thanks to this simplicity and the structural compactness of each cell, the obtained stacks are very thin (~1.6 mm for a two-cell stack. We have fabricated two-cell stacks with two different gas flow topologies and obtained an open-circuit voltage (OCV of 1.6 V and a power density of 63 mW·cm−2, proving the viability of the design.

  19. Open stack thermal battery tests

    Energy Technology Data Exchange (ETDEWEB)

    Long, Kevin N. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Roberts, Christine C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Grillet, Anne M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Headley, Alexander J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Fenton, Kyle [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wong, Dennis [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Ingersoll, David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-04-17

    We present selected results from a series of Open Stack thermal battery tests performed in FY14 and FY15 and discuss our findings. These tests were meant to provide validation data for the comprehensive thermal battery simulation tools currently under development in Sierra/Aria under known conditions compared with as-manufactured batteries. We are able to satisfy this original objective in the present study for some test conditions. Measurements from each test include: nominal stack pressure (axial stress) vs. time in the cold state and during battery ignition, battery voltage vs. time against a prescribed current draw with periodic pulses, and images transverse to the battery axis from which cell displacements are computed. Six battery configurations were evaluated: 3, 5, and 10 cell stacks sandwiched between 4 layers of the materials used for axial thermal insulation, either Fiberfrax Board or MinK. In addition to the results from 3, 5, and 10 cell stacks with either in-line Fiberfrax Board or MinK insulation, a series of cell-free “control” tests were performed that show the inherent settling and stress relaxation based on the interaction between the insulation and heat pellets alone.

  20. Adding large EM stack support

    KAUST Repository

    Holst, Glendon

    2016-12-01

    Serial section electron microscopy (SSEM) image stacks generated using high throughput microscopy techniques are an integral tool for investigating brain connectivity and cell morphology. FIB or 3View scanning electron microscopes easily generate gigabytes of data. In order to produce analyzable 3D dataset from the imaged volumes, efficient and reliable image segmentation is crucial. Classical manual approaches to segmentation are time consuming and labour intensive. Semiautomatic seeded watershed segmentation algorithms, such as those implemented by ilastik image processing software, are a very powerful alternative, substantially speeding up segmentation times. We have used ilastik effectively for small EM stacks – on a laptop, no less; however, ilastik was unable to carve the large EM stacks we needed to segment because its memory requirements grew too large – even for the biggest workstations we had available. For this reason, we refactored the carving module of ilastik to scale it up to large EM stacks on large workstations, and tested its efficiency. We modified the carving module, building on existing blockwise processing functionality to process data in manageable chunks that can fit within RAM (main memory). We review this refactoring work, highlighting the software architecture, design choices, modifications, and issues encountered.

  1. Induced magnetism in transition metal intercalated graphitic systems

    KAUST Repository

    Kaloni, Thaneshwor P.; Schwingenschlö gl, Udo; Upadhyay Kahaly, M.

    2011-01-01

    We investigate the structure, chemical bonding, electronic properties, and magnetic behavior of a three-dimensional graphitic network in aba and aaa stacking with intercalated transition metal atoms (Mn, Fe, Co, Ni, and Cu). Using density functional theory, we find induced spin-polarization of the C atoms both when the graphene sheets are aba stacked (forming graphite) and aaa stacked (resembling bi-layer graphene). The magnetic moment induced by Mn, Fe, and Co turns out to vary from 1.38 μB to 4.10 μB, whereas intercalation of Ni and Cu does not lead to a magnetic state. The selective induction of spin-polarization can be utilized in spintronic and nanoelectronic applications.

  2. Induced magnetism in transition metal intercalated graphitic systems

    KAUST Repository

    Kaloni, Thaneshwor P.

    2011-10-26

    We investigate the structure, chemical bonding, electronic properties, and magnetic behavior of a three-dimensional graphitic network in aba and aaa stacking with intercalated transition metal atoms (Mn, Fe, Co, Ni, and Cu). Using density functional theory, we find induced spin-polarization of the C atoms both when the graphene sheets are aba stacked (forming graphite) and aaa stacked (resembling bi-layer graphene). The magnetic moment induced by Mn, Fe, and Co turns out to vary from 1.38 μB to 4.10 μB, whereas intercalation of Ni and Cu does not lead to a magnetic state. The selective induction of spin-polarization can be utilized in spintronic and nanoelectronic applications.

  3. Thermodynamic modeling of the stacking fault energy of austenitic steels

    International Nuclear Information System (INIS)

    Curtze, S.; Kuokkala, V.-T.; Oikari, A.; Talonen, J.; Haenninen, H.

    2011-01-01

    The stacking fault energies (SFE) of 10 austenitic steels were determined in the temperature range 50 ≤ T ≤ 600 K by thermodynamic modeling of the Fe-Cr-Ni-Mn-Al-Si-Cu-C-N system using a modified Olson and Cohen modeling approach (Olson GB, Cohen M. Metall Trans 1976;7A:1897 ). The applied model accounts for each element's contribution to the Gibbs energy, the first-order excess free energies, magnetic contributions and the effect of interstitial nitrogen. Experimental SFE values from X-ray diffraction measurements were used for comparison. The effect of SFE on deformation mechanisms was also studied by electron backscatter diffraction.

  4. Laser pulse stacking method

    Science.gov (United States)

    Moses, E.I.

    1992-12-01

    A laser pulse stacking method is disclosed. A problem with the prior art has been the generation of a series of laser beam pulses where the outer and inner regions of the beams are generated so as to form radially non-synchronous pulses. Such pulses thus have a non-uniform cross-sectional area with respect to the outer and inner edges of the pulses. The present invention provides a solution by combining the temporally non-uniform pulses in a stacking effect to thus provide a more uniform temporal synchronism over the beam diameter. 2 figs.

  5. Sliding charge density wave in the monophosphate tungsten bronze (PO2)4(WO3)2m with alternate stacking of m=4 and m=6 WO3 layers

    International Nuclear Information System (INIS)

    Foury-Leylekian, P.; Sandre, E.; Ravy, S.; Pouget, J.-P.; Elkaim, E.; Roussel, P.; Groult, D.; Labbe, Ph.

    2002-01-01

    The monophosphate tungsten bronzes (PO 2 ) 4 (WO 3 ) 2m form family of two-dimensional metals which exhibit charge density wave (CDW) instabilities. These materials are generally built by the regular stacking of (a,b) layers in which chains made of segments of m WO 6 octahedra directed along the a and a±b directions are delimited. Their electronic structure thus originates from quasi-one-dimensional (1D) bands located on these chains. As a consequence their Fermi surface (FS) exhibits large flat portions whose nesting gives rise to successive CDW instabilities. Here we present a structural study of the CDW instability of the (PO 2 ) 4 (WO 3 ) 10 member formed by the alternate stacking of layers built with segments of m=4 and m=6 WO 6 octahedra. Its ab initio electronic structure calculation shows that the FS of this member exhibits large flat portions which can be extremely well nested. Its best nesting wave vector accounts for the modulation wave vector stabilized by the CDW transition which occurs at 156 K. Because of the regular stacking of layers of different m values the FS is slightly split. The unusual thermal dependence of the x-ray satellite intensity provides evidence that the two types of layers become modulated at different temperature. This also leads to a slight thermal sliding of the CDW-nesting modulation wave vector, which can be accounted for within the framework of a Landau-Ginzburg theory. In addition, the observation of a global hysteresis in the thermal cycling of the satellite intensity, as well as the degradation of the interlayer order upon cooling, suggest the formation of a disordered lattice of dilute solitons. Such solitons allow to accommodate the charge transferred between the two types of layer. Finally the relevance of local charge transfers, at intergrowth defects, for example, to create pinned discommensurations that break the CDW coherence is emphasized in this whole family of bronzes

  6. TRANGE: computer code to calculate the energy beam degradation in target stack

    International Nuclear Information System (INIS)

    Bellido, Luis F.

    1995-07-01

    A computer code to calculate the projectile energy degradation along a target stack was developed for an IBM or compatible personal microcomputer. A comparison of protons and deuterons bombarding uranium and aluminium targets was made. The results showed that the data obtained with TRANGE were in agreement with other computers code such as TRIM, EDP and also using Williamsom and Janni range and stopping power tables. TRANGE can be used for any charged particle ion, for energies between 1 to 100 MeV, in metal foils and solid compounds targets. (author). 8 refs., 2 tabs

  7. New integrable lattice hierarchies

    International Nuclear Information System (INIS)

    Pickering, Andrew; Zhu Zuonong

    2006-01-01

    In this Letter we give a new integrable four-field lattice hierarchy, associated to a new discrete spectral problem. We obtain our hierarchy as the compatibility condition of this spectral problem and an associated equation, constructed herein, for the time-evolution of eigenfunctions. We consider reductions of our hierarchy, which also of course admit discrete zero curvature representations, in detail. We find that our hierarchy includes many well-known integrable hierarchies as special cases, including the Toda lattice hierarchy, the modified Toda lattice hierarchy, the relativistic Toda lattice hierarchy, and the Volterra lattice hierarchy. We also obtain here a new integrable two-field lattice hierarchy, to which we give the name of Suris lattice hierarchy, since the first equation of this hierarchy has previously been given by Suris. The Hamiltonian structure of the Suris lattice hierarchy is obtained by means of a trace identity formula

  8. Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

    International Nuclear Information System (INIS)

    Wei Xia; Yan Fa-Guang; Shen Chao; Lv Quan-Shan; Wang Kai-You

    2017-01-01

    Transition metal dichalcogenides (TMDCs) have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional (2D) materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs. (topical reviews)

  9. High Power High Efficiency Diode Laser Stack for Processing

    Science.gov (United States)

    Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

    2018-03-01

    High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

  10. Understanding lattice defects to influence ferromagnetic order of ZnO nanoparticles by Ni, Cu, Ce ions

    Energy Technology Data Exchange (ETDEWEB)

    Verma, Kuldeep Chand, E-mail: dkuldeep.physics@gmail.com [Department of Physics, Panjab University, Chandigarh 160014 (India); Kotnala, R.K., E-mail: rkkotnala@gmail.com [CSIR-National Physical Laboratory, New Delhi 110012 (India)

    2017-02-15

    Future spintronics technologies based on diluted magnetic semiconductors (DMS) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. It remains unclear, however, whether the ferromagnetism in DMS is intrinsic - a precondition for spintronics - or due to dopant clustering. For this, we include a simultaneous doping from transition metal (Ni, Cu) and rare earth (Ce) ions in ZnO nanoparticles that increase the antiferromagnetic ordering to achieve high-T{sub c} ferromagnetism. Rietveld refinement of XRD patterns indicate that the dopant ions in ZnO had a wurtzite structure and the dopants, Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions, are highly influenced the lattice constants to induce lattice defects. The Ni, Cu, Ce ions in ZnO have nanoparticles formation than nanorods was observed in pure sample. FTIR involve some organic groups to induce lattice defects and the metal-oxygen bonding of Zn, Ni, Cu, Ce and O atoms to confirm wurtzite structure. Raman analysis evaluates the crystalline quality, structural disorder and defects in ZnO lattice with doping. Photoluminescence spectra have strong near-band-edge emission and visible emission bands responsible for defects due to oxygen vacancies. The energy band gap is calculated using Tauc relation. Room temperature ferromagnetism has been described due to bound magnetic polarons formation with Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions in ZnO via oxygen vacancies. The zero field and field cooling SQUID measurement confirm the strength of antiferromagnetism in ZnO. The field cooling magnetization is studied by Curie-Weiss law that include antiferromagnetic interactions up to low temperature. The XPS spectra have involve +3/+4 oxidation states of Ce ions to influence the observed ferromagnetism. - Graphical abstract: The lattice defects/vacancies attributed by Ni and Ce ions in the wurtzite ZnO structure are responsible in high T{sub c} -ferromagnetism due to long-range magnetic

  11. Quantification of Honeycomb Number-Type Stacking Faults: Application to Na3Ni2BiO6 Cathodes for Na-Ion Batteries.

    Science.gov (United States)

    Liu, Jue; Yin, Liang; Wu, Lijun; Bai, Jianming; Bak, Seong-Min; Yu, Xiqian; Zhu, Yimei; Yang, Xiao-Qing; Khalifah, Peter G

    2016-09-06

    Ordered and disordered samples of honeycomb-lattice Na3Ni2BiO6 were investigated as cathodes for Na-ion batteries, and it was determined that the ordered sample exhibits better electrochemical performance, with a specific capacity of 104 mA h/g delivered at plateaus of 3.5 and 3.2 V (vs Na(+)/Na) with minimal capacity fade during extended cycling. Advanced imaging and diffraction investigations showed that the primary difference between the ordered and disordered samples is the amount of number-type stacking faults associated with the three possible centering choices for each honeycomb layer. A labeling scheme for assigning the number position of honeycomb layers is described, and it is shown that the translational shift vectors between layers provide the simplest method for classifying different repeat patterns. It is demonstrated that the number position of honeycomb layers can be directly determined in high-angle annular dark-field scanning transmission electron microscopy (STEM-HAADF) imaging studies. By the use of fault models derived from STEM studies, it is shown that both the sharp, symmetric subcell peaks and the broad, asymmetric superstructure peaks in powder diffraction patterns can be quantitatively modeled. About 20% of the layers in the ordered monoclinic sample are faulted in a nonrandom manner, while the disordered sample stacking is not fully random but instead contains about 4% monoclinic order. Furthermore, it is shown that the ordered sample has a series of higher-order superstructure peaks associated with 6-, 9-, 12-, and 15-layer periods whose existence is transiently driven by the presence of long-range strain that is an inherent consequence of the synthesis mechanism revealed through the present diffraction and imaging studies. This strain is closely associated with a monoclinic shear that can be directly calculated from cell lattice parameters and is strongly correlated with the degree of ordering in the samples. The present results are

  12. Lattice gauge theories

    International Nuclear Information System (INIS)

    Creutz, M.

    1983-04-01

    In the last few years lattice gauge theory has become the primary tool for the study of nonperturbative phenomena in gauge theories. The lattice serves as an ultraviolet cutoff, rendering the theory well defined and amenable to numerical and analytical work. Of course, as with any cutoff, at the end of a calculation one must consider the limit of vanishing lattice spacing in order to draw conclusions on the physical continuum limit theory. The lattice has the advantage over other regulators that it is not tied to the Feynman expansion. This opens the possibility of other approximation schemes than conventional perturbation theory. Thus Wilson used a high temperature expansion to demonstrate confinement in the strong coupling limit. Monte Carlo simulations have dominated the research in lattice gauge theory for the last four years, giving first principle calculations of nonperturbative parameters characterizing the continuum limit. Some of the recent results with lattice calculations are reviewed

  13. Start-Stop Test Procedures on the PEMFC Stack Level

    DEFF Research Database (Denmark)

    Mitzel, Jens; Nygaard, Frederik; Veltzé, Sune

    The test is addressed to investigate the influence on stack durability of a long stop followed by a restart of a stack. Long stop should be defined as a stop in which the anodic compartment is fully filled by air due to stack leakages. In systems, leakage level of the stack is low and time to fil...

  14. Kinetic model for mechanical twinning and its application for intensive loading of metals

    Directory of Open Access Journals (Sweden)

    Mayer Alexander

    2015-01-01

    Full Text Available In this report, we present our twinning model intended for simulation of the dynamic deformation of metals with low values of the stacking fault energy, as well as the results of application of the model to numerical simulation of intensive loading of metals. Generation of a twin is described as an appearance of a stacking fault with size more than some critical value, while growth of a twin is considered as a cooperative movement of partial dislocation along the stacking fault. The twin nucleation rate is expressed through the energy released due to annihilation of dislocations. Movement of partial dislocations in the course of twin growth passes under the action of elastic stress field and phonon drag. The surface energy of the growing twin continuously increases which leads to the appearance of an additional force. Application of this model allows us to investigate plastic response of metals at various dynamic loading conditions and initial defect structures. Influence of twinning at Taylor rod compaction experiments is analyzed including formation of the shape of the lateral surface.

  15. Convection-diffusion lattice Boltzmann scheme for irregular lattices

    NARCIS (Netherlands)

    Sman, van der R.G.M.; Ernst, M.H.

    2000-01-01

    In this paper, a lattice Boltzmann (LB) scheme for convection diffusion on irregular lattices is presented, which is free of any interpolation or coarse graining step. The scheme is derived using the axioma that the velocity moments of the equilibrium distribution equal those of the

  16. Probing the limits of metal plasticity with molecular dynamics simulations

    Science.gov (United States)

    Zepeda-Ruiz, Luis A.; Stukowski, Alexander; Oppelstrup, Tomas; Bulatov, Vasily V.

    2017-10-01

    Ordinarily, the strength and plasticity properties of a metal are defined by dislocations--line defects in the crystal lattice whose motion results in material slippage along lattice planes. Dislocation dynamics models are usually used as mesoscale proxies for true atomistic dynamics, which are computationally expensive to perform routinely. However, atomistic simulations accurately capture every possible mechanism of material response, resolving every ``jiggle and wiggle'' of atomic motion, whereas dislocation dynamics models do not. Here we present fully dynamic atomistic simulations of bulk single-crystal plasticity in the body-centred-cubic metal tantalum. Our goal is to quantify the conditions under which the limits of dislocation-mediated plasticity are reached and to understand what happens to the metal beyond any such limit. In our simulations, the metal is compressed at ultrahigh strain rates along its [001] crystal axis under conditions of constant pressure, temperature and strain rate. To address the complexity of crystal plasticity processes on the length scales (85-340 nm) and timescales (1 ns-1μs) that we examine, we use recently developed methods of in situ computational microscopy to recast the enormous amount of transient trajectory data generated in our simulations into a form that can be analysed by a human. Our simulations predict that, on reaching certain limiting conditions of strain, dislocations alone can no longer relieve mechanical loads; instead, another mechanism, known as deformation twinning (the sudden re-orientation of the crystal lattice), takes over as the dominant mode of dynamic response. Below this limit, the metal assumes a strain-path-independent steady state of plastic flow in which the flow stress and the dislocation density remain constant as long as the conditions of straining thereafter remain unchanged. In this distinct state, tantalum flows like a viscous fluid while retaining its crystal lattice and remaining a strong

  17. SRS reactor stack plume marking tests

    International Nuclear Information System (INIS)

    Petry, S.F.

    1992-03-01

    Tests performed in 105-K in 1987 and 1988 demonstrated that the stack plume can successfully be made visible (i.e., marked) by introducing smoke into the stack breech. The ultimate objective of these tests is to provide a means during an emergency evacuation so that an evacuee can readily identify the stack plume and evacuate in the opposite direction, thus minimizing the potential of severe radiation exposure. The EPA has also requested DOE to arrange for more tests to settle a technical question involving the correct calculation of stack downwash. New test canisters were received in 1988 designed to produce more smoke per unit time; however, these canisters have not been evaluated, because normal ventilation conditions have not been reestablished in K Area. Meanwhile, both the authorization and procedure to conduct the tests have expired. The tests can be performed during normal reactor operation. It is recommended that appropriate authorization and procedure approval be obtained to resume testing after K Area restart

  18. Trace interpolation by slant-stack migration

    International Nuclear Information System (INIS)

    Novotny, M.

    1990-01-01

    The slant-stack migration formula based on the radon transform is studied with respect to the depth steep Δz of wavefield extrapolation. It can be viewed as a generalized trace-interpolation procedure including wave extrapolation with an arbitrary step Δz. For Δz > 0 the formula yields the familiar plane-wave decomposition, while for Δz > 0 it provides a robust tool for migration transformation of spatially under sampled wavefields. Using the stationary phase method, it is shown that the slant-stack migration formula degenerates into the Rayleigh-Sommerfeld integral in the far-field approximation. Consequently, even a narrow slant-stack gather applied before the diffraction stack can significantly improve the representation of noisy data in the wavefield extrapolation process. The theory is applied to synthetic and field data to perform trace interpolation and dip reject filtration. The data examples presented prove that the radon interpolator works well in the dip range, including waves with mutual stepouts smaller than half the dominant period

  19. Development of Auto-Stacking Warehouse Truck

    Directory of Open Access Journals (Sweden)

    Kuo-Hsien Hsia

    2018-03-01

    Full Text Available Warehouse automation is a very important issue for the promotion of traditional industries. For the production of larger and stackable products, it is usually necessary to operate a fork-lifter for the stacking and storage of the products by a skilled person. The general autonomous warehouse-truck does not have the ability of stacking objects. In this paper, we develop a prototype of auto-stacking warehouse-truck that can work without direct operation by a skill person. With command made by an RFID card, the stacker truck can take the packaged product to the warehouse on the prior-planned route and store it in a stacking way in the designated storage area, or deliver the product to the shipping area or into the container from the storage area. It can significantly reduce the manpower requirements of the skilled-person of forklift technician and improve the safety of the warehousing area.

  20. Lattice location of Mn in GaAs and GaN

    CERN Document Server

    De Coster, Arnaud; Vantomme, André; Temst, Kristiaan

    The field of dilute magnetic semiconductors (DMS) has seen a lot of development in the past decades, both from a fundamental interest in the linkage of magnetic and conducting properties and with an eye to potential applications in computer technology. While the presence of semiconducting properties and magnetism in a given material is not out of the ordinary, DMS materials stand out because the charge carriers actually mediate between magnetic moments in the lattice, causing the ferromagnetic ordering. These magnetic moments and charge carriers are supplied by transition-metal (TM) dopants in a classic semiconductor. The location where these dopants are incorporated will determine if they will act as either an acceptor or donor and how they will couple to other magnetic moments. Hence, in order to achieve a better understanding of DMS, accurate knowledge of the lattice location the TM takes up in the crystal is vital. In this thesis the lattice location of Mn in GaAs and GaN is studied, two model materials f...

  1. Cleaning of stack gases from combustion of low level radioactive waste in Studsvik, Sweden

    International Nuclear Information System (INIS)

    Haard, E.

    1979-01-01

    The plant for combustion of low-level radioactive waste at Studsvik, Sweden, is described. The waste that is treated comes from nuclear power plants, industry, hospitals and universities. It is estimated to be about 270 ton/year in a few years time. The waste consists of plast, cloth, wood, paper, rubber, biological material and unburnable components such as glass and metals. The bags with waste may have a maximum surface dose rate of 10 mrem/h. For 5 % of the bags the maximum dose rate may be 100 mrem/h. During the combustion, samples of the stack gases are collected. The release of radioactivity is reported to the Swedish authorities. During 1978 three different stack gas cleaning systems, wet cleaning, electrostatic filters and textile filters were investigated. The wet cleaning gave a radioactive sludge which was difficult to take care of. In the electrostatic filters it was difficult to change components due to radioactivity. Therefore the textile filters were chosen. A textile filter will be installed during 1979. The cleaning capacity of the filter is expected to be 90 % and will decrease the collective doses from stack gases with 6.7 manrem/year. The cost is estimated to 450 000 Sw kr/year (100 000 US dollar). (K.K.)

  2. Lattices with unique complements

    CERN Document Server

    Saliĭ, V N

    1988-01-01

    The class of uniquely complemented lattices properly contains all Boolean lattices. However, no explicit example of a non-Boolean lattice of this class has been found. In addition, the question of whether this class contains any complete non-Boolean lattices remains unanswered. This book focuses on these classical problems of lattice theory and the various attempts to solve them. Requiring no specialized knowledge, the book is directed at researchers and students interested in general algebra and mathematical logic.

  3. Tables of formulae for calculating the mechanics of stacks in gas-graphite reactors; Formulaire pour le calcul de la mecanique des empilements des reacteurs graphite-gaz

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1968-07-01

    This collection of formulae only gives, for nuclear graphite stacks. The mechanical effects due to the strains, thermal or not, of steel structures supporting or surrounding graphite blocks. Equations have been established by mean of experiments made at Chinon with large pile models. Thus, it is possible to calculate displacement, strain and stress in the EDF type stacks of horizontal triangular block lattice. (authors) [French] Le domaine de ce formulaire est strictement limite aux effets mecaniques, pour les empilements, des deformations, thermiques ou autres, des structures metalliques de soutien (aire - support et corset). On propose un ensemble de relations qui ont ete etablies a la suite des essais de CHINON sur des maquettes de grande taille. Ces relations permettent le calcul des mouvements, des deformations et des contraintes dans les empilements du type EDF, a reseau horizontal triangulaire regulier. (auteurs)

  4. 40 CFR 61.44 - Stack sampling.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 8 2010-07-01 2010-07-01 false Stack sampling. 61.44 Section 61.44 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) NATIONAL... Firing § 61.44 Stack sampling. (a) Sources subject to § 61.42(b) shall be continuously sampled, during...

  5. SOFC - Manufacture of stacks for test and demonstration related activities, stack and system tests and identification of end user requirements. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Jacobsen, Joachim; Primdahl, S.; Boegh Elmose, H.; Weineisen, H.; Richter, A.

    2008-11-15

    The aim of the project was to solve the technical challenges in relation to stack functionality in connection with operation of multi stack assemblies under realistic operating conditions. It was the intention to make a targeted effort with the aim of developing a high performance stack technology suitable for both small and large units. An important part of the project was the testing of stack assemblies up to 10 kW power range with relevant fuel and realistic operation condition in the test facility at HC OErstedvaerket. The manufacturing of stacks in the project was as planned a number of stacks (70 kW) for use in demonstration projects both for single stacks and for multi stack assemblies. The start up of the work on the SOFC test facility at HC OErstedsvaerket (HCV) was delayed due to a late delivery of the unit from the PSO 6385 project. A number of unforeseen events during the project have meant that the SOFC test facility at HCV has not until now been ready for performing tests. The experience gained from the operation of a 20 kW Alpha unit in a co-operation between TOFC and Waertsilae now provides an important contribution to the future multi stack assemblies. The work on identification of end user requirements has resulted in a number of different development priorities for the m-CHP and the Distributed Generation market segments. (au)

  6. The metallic state in neutral radical conductors: dimensionality, pressure and multiple orbital effects.

    Science.gov (United States)

    Tian, Di; Winter, Stephen M; Mailman, Aaron; Wong, Joanne W L; Yong, Wenjun; Yamaguchi, Hiroshi; Jia, Yating; Tse, John S; Desgreniers, Serge; Secco, Richard A; Julian, Stephen R; Jin, Changqing; Mito, Masaki; Ohishi, Yasuo; Oakley, Richard T

    2015-11-11

    Pressure-induced changes in the solid-state structures and transport properties of three oxobenzene-bridged bisdithiazolyl radicals 2 (R = H, F, Ph) over the range 0-15 GPa are described. All three materials experience compression of their π-stacked architecture, be it (i) 1D ABABAB π-stack (R = Ph), (ii) quasi-1D slipped π-stack (R = H), or (iii) 2D brick-wall π-stack (R = F). While R = H undergoes two structural phase transitions, neither of R = F, Ph display any phase change. All three radicals order as spin-canted antiferromagnets, but spin-canted ordering is lost at pressures pressure, and the thermal activation energy for conduction Eact is eliminated at pressures ranging from ∼3 GPa for R = F to ∼12 GPa for R = Ph, heralding formation of a highly correlated (or bad) metallic state. For R = F, H the pressure-induced Mott insulator to metal conversion has been tracked by measurements of optical conductivity at ambient temperature and electrical resistivity at low temperature. For R = F compression to 6.2 GPa leads to a quasiquadratic temperature dependence of the resistivity over the range 5-300 K, consistent with formation of a 2D Fermi liquid state. DFT band structure calculations suggest that the ease of metallization of these radicals can be ascribed to their multiorbital character. Mixing and overlap of SOMO- and LUMO-based bands affords an increased kinetic energy stabilization of the metallic state relative to a single SOMO-based band system.

  7. Synthesis of carbon nanotubes from palm oil on stacking and non-stacking substrate by thermal-CVD method

    Science.gov (United States)

    Robaiah, M.; Rusop, M.; Abdullah, S.; Khusaimi, Z.; Azhan, H.; Fadzlinatul, M. Y.; Salifairus, M. J.; Asli, N. A.

    2018-05-01

    Palm oil has been used as the carbon source to synthesize carbon nanotubes (CNTs) on silicon substrates using the thermal chemical vapor deposition (CVD) method. Meanwhile, silicon has been applied using two techniques, which are stacked technique and non-stacked technique. The CNTs were grown at the constant time of 30 minutes with various synthesis temperatures of 750 °C, 850 °C and 950 °C. The CNTs were characterized using micro-Raman spectroscopy and field emission scanning electron microscopy (FESEM). It was found that the density, growth rate, diameter and length of the CNTs produced were affected by the synthesis temperature. Moreover, the structure slightly changes were observed between CNTs obtained in SS and NSS. The synthesize temperature of 750 °C was considered as the suitable temperature for the production of CNTs due to low ID/IG ratio, which for stacked is 0.89 and non-stacked are 0.90. The possible explanation for the different morphology of the produced CNTs was also discussed.

  8. High Efficiency Optical MEMS by the Integration of Photonic Lattices with Surface MEMS

    Energy Technology Data Exchange (ETDEWEB)

    FLEMING, JAMES G.; LIN, SHAWN-YU; MANI, SEETHAMBAL S.; RODGERS, M. STEVEN; DAGEL, DARYL J.

    2002-11-01

    This report outlines our work on the integration of high efficiency photonic lattice structures with MEMS (MicroElectroMechanical Systems). The simplest of these structures were based on 1-D mirror structures. These were integrated into a variety of devices, movable mirrors, switchable cavities and finally into Bragg fiber structures which enable the control of light in at least 2 dimensions. Of these devices, the most complex were the Bragg fibers. Bragg fibers consist of hollow tubes in which light is guided in a low index media (air) and confined by surrounding Bragg mirror stacks. In this work, structures with internal diameters from 5 to 30 microns have been fabricated and much larger structures should also be possible. We have demonstrated the fabrication of these structures with short wavelength band edges ranging from 400 to 1600nm. There may be potential applications for such structures in the fields of integrated optics and BioMEMS. We have also looked at the possibility of waveguiding in 3 dimensions by integrating defects into 3-dimensional photonic lattice structures. Eventually it may be possible to tune such structures by mechanically modulating the defects.

  9. The Lattice-Valued Turing Machines and the Lattice-Valued Type 0 Grammars

    Directory of Open Access Journals (Sweden)

    Juan Tang

    2014-01-01

    Full Text Available Purpose. The purpose of this paper is to study a class of the natural languages called the lattice-valued phrase structure languages, which can be generated by the lattice-valued type 0 grammars and recognized by the lattice-valued Turing machines. Design/Methodology/Approach. From the characteristic of natural language, this paper puts forward a new concept of the l-valued Turing machine. It can be used to characterize recognition, natural language processing, and dynamic characteristics. Findings. The mechanisms of both the generation of grammars for the lattice-valued type 0 grammar and the dynamic transformation of the lattice-valued Turing machines were given. Originality/Value. This paper gives a new approach to study a class of natural languages by using lattice-valued logic theory.

  10. Microstructural and surface modifications and hydroxyapatite coating of Ti-6Al-4V triply periodic minimal surface lattices fabricated by selective laser melting.

    Science.gov (United States)

    Yan, Chunze; Hao, Liang; Hussein, Ahmed; Wei, Qingsong; Shi, Yusheng

    2017-06-01

    Ti-6Al-4V Gyroid triply periodic minimal surface (TPMS) lattices were manufactured by selective laser melting (SLM). The as-built Ti-6Al-4V lattices exhibit an out-of-equilibrium microstructure with very fine α' martensitic laths. When subjected to the heat treatment of 1050°C for 4h followed by furnace cooling, the lattices show a homogenous and equilibrium lamellar α+β microstructure with less dislocation and crystallographic defects compared with the as-built α' martensite. The as-built lattices present very rough strut surfaces bonded with plenty of partially melted metal particles. The sand blasting nearly removed all the bonded metal particles, but created many tiny cracks. The HCl etching eliminated these tiny cracks, and subsequent NaOH etching resulted in many small and shallow micro-pits and develops a sodium titanate hydrogel layer on the surfaces of the lattices. When soaked in simulated body fluid (SBF), the Ti-6Al-4V TPMS lattices were covered with a compact and homogeneous biomimetic hydroxyapatite (HA) layer. This work proposes a new method for making Ti-6Al-4V TPMS lattices with a homogenous and equilibrium microstructure and biomimetic HA coating, which show both tough and bioactive characteristics and can be promising materials usable as bone substitutes. Copyright © 2017 Elsevier B.V. All rights reserved.

  11. On the evolution and modelling of lattice strains during the cyclic loading of TWIP steel

    International Nuclear Information System (INIS)

    Saleh, Ahmed A.; Pereloma, Elena V.; Clausen, Bjørn; Brown, Donald W.; Tomé, Carlos N.; Gazder, Azdiar A.

    2013-01-01

    The evolution of lattice strains in fully annealed Fe–24Mn–3Al–2Si–1Ni–0.06C twinning-induced plasticity (TWIP) steel is investigated via in situ neutron diffraction during cyclic (tension–compression) loading between strain limits of ±1%. The pronounced Bauschinger effect observed upon load reversal is accounted for by a combination of the intergranular residual stresses and the intragranular sources of back stress, such as dislocation pile-ups at the intersection of stacking faults. The recently modified elasto-plastic self-consistent (EPSC) model which empirically accounts for both intergranular and intragranular back stresses has been successfully used to simulate the macroscopic stress–strain response and the evolution of the lattice strains. The EPSC model captures the experimentally observed tension–compression asymmetry as it accounts for the directionality of twinning as well as Schmid factor considerations. For the strain limits used in this study, the EPSC model also predicts that the lower flow stress on reverse shear loading reported in earlier Bauschinger-type experiments on TWIP steel is a geometrical or loading path effect

  12. Buckling and reaction rate measurements in graphite moderated lattices fuelled with plutonium-uranium oxide clusters at temperatures up to 400 deg. C

    Energy Technology Data Exchange (ETDEWEB)

    Carter, D H; Gibson, M; King, D C; Marshall, J; Puckett, B J; Richards, A E; Wass, T; Wilson, D J [General Reactor Physics Division, Atomic Energy Establishment, Winfrith, Dorchester, Dorset (United Kingdom)

    1965-07-15

    The Report describes a series of experiments carried out in SCORPIO I and II on sub-critical graphite moderated lattices fuelled with 21-rod clusters of PuO{sub 2}/UO{sub 2} fuel. Three fuel batches with nominal plutonium: uranium ratios of 0.25%, 0.8% and 1.2% were investigated at temperatures between 20 deg. C and 400 deg. C. Because of the limited amounts of the three fuels, exponential measurements were made in 2-zone stacks, the outer regions of which were loaded with suitably matched 'reference fuel'. Fine structure distributions in the lattice cell were obtained with manganese and indium foils. Pu239/U235 fission ratios were determined both by fission chambers and by fission-product counting techniques. (author) 14 refs, 30 figs, 18 tabs

  13. On the "stacking fault" in copper

    NARCIS (Netherlands)

    Fransens, J.R.; Pleiter, F

    2003-01-01

    The results of a perturbed gamma-gamma angular correlations experiment on In-111 implanted into a properly cut single crystal of copper show that the defect known in the literature as "stacking fault" is not a planar faulted loop but a stacking fault tetrahedron with a size of 10-50 Angstrom.

  14. Reviewing metallic PEMFC bipolar plates

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H.; Turner, J.A. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-08-15

    A bipolar plate is one of the most important components in a polymer exchange membrane fuel cell (PEMFC) stack and has multiple functions. Metallic bipolar plate candidates have advantages over composite rivals in excellent electrical and thermal conductivity, good mechanical strength, high chemical stability, very wide alloy choices, low cost and, most importantly, existing pathways for high-volume, high-speed mass production. The challenges with metallic bipolar plates are the higher contact resistance and possible corrosion products, which may contaminate the membrane electrode assembly. This review evaluates the candidate metallic and coating materials for bipolar plates and gives the perspective of the research trends. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  15. Additive lattice kirigami.

    Science.gov (United States)

    Castle, Toen; Sussman, Daniel M; Tanis, Michael; Kamien, Randall D

    2016-09-01

    Kirigami uses bending, folding, cutting, and pasting to create complex three-dimensional (3D) structures from a flat sheet. In the case of lattice kirigami, this cutting and rejoining introduces defects into an underlying 2D lattice in the form of points of nonzero Gaussian curvature. A set of simple rules was previously used to generate a wide variety of stepped structures; we now pare back these rules to their minimum. This allows us to describe a set of techniques that unify a wide variety of cut-and-paste actions under the rubric of lattice kirigami, including adding new material and rejoining material across arbitrary cuts in the sheet. We also explore the use of more complex lattices and the different structures that consequently arise. Regardless of the choice of lattice, creating complex structures may require multiple overlapping kirigami cuts, where subsequent cuts are not performed on a locally flat lattice. Our additive kirigami method describes such cuts, providing a simple methodology and a set of techniques to build a huge variety of complex 3D shapes.

  16. Lattice Dynamics of fcc Ca

    DEFF Research Database (Denmark)

    Stassis, C.; Zaretsky, J.; Misemer, D. K.;

    1983-01-01

    A large single crystal of FCC Ca was grown and was used to study the lattice dynamics of this divalent metal by coherent inelastic neutron scattering. The phonon dispersion curves were measured, at room temperature, along the [ξ00], [ξξ0], [ξξξ], and [0ξ1] symmetry directions. The dispersion curves...... to the propagation of elastic waves. The frequencies of the T1[ξξ0] branch for ξ between approximately 0.5 and 0.8 are slightly above the velocity-of-sound line determined from the low-frequency measurements. Since a similar effect has been observed in FCC Yb, it is natural to assume that the anomalous dispersion...... bear a striking resemblance to those of FCC Yb, which is also a divalent metal with an electronic band structure similar to that of Ca. In particular, the shear moduli c44 and (c11-c 12)/2 differ by a factor of 3.4, which implies that FCC Ca (like FCC Yb) is very anisotropic with regard...

  17. A preliminary study of a miniature planar 6-cell PEMFC stack combined with a small hydrogen storage canister

    Science.gov (United States)

    Zhang, Xigui; Zheng, Dan; Wang, Tao; Chen, Cong; Cao, Jianyu; Yan, Jian; Wang, Wenming; Liu, Juanying; Liu, Haohan; Tian, Juan; Li, Xinxin; Yang, Hui; Xia, Baojia

    The fabrication and performance evaluation of a miniature 6-cell PEMFC stack based on Micro-Electronic-Mechanical-System (MEMS) technology is presented in this paper. The stack with a planar configuration consists of 6-cells in serial interconnection by spot welding one cell anode with another cell cathode. Each cell was made by sandwiching a membrane-electrode-assembly (MEA) between two flow field plates fabricated by a classical MEMS wet etching method using silicon wafer as the original material. The plates were made electrically conductive by sputtering a Ti/Pt/Au composite metal layer on their surfaces. The 6-cells lie in the same plane with a fuel buffer/distributor as their support, which was fabricated by the MEMS silicon-glass bonding technology. A small hydrogen storage canister was used as fuel source. Operating on dry H 2 at a 40 ml min -1 flow rate and air-breathing conditions at room temperature and atmospheric pressure, the linear polarization experiment gave a measured peak power of 0.9 W at 250 mA cm -2 for the stack and average power density of 104 mW cm -2 for each cell. The results suggested that the stack has reasonable performance benefiting from an even fuel supply. But its performance tended to deteriorate with power increase, which became obvious at 600 mW. This suggests that the stack may need some power assistance, from say supercapacitors to maintain its stability when operated at higher power.

  18. Lattice Location of Radioactive Probes in Semiconductors and Metals by Electron and Positron Channelling

    CERN Multimedia

    2002-01-01

    The channelling effect of decay-electrons and positrons is used for the localization of radioactive impurities implanted into single crystals. Because of the low implantation doses and the variety of different isotopes available at ISOLDE, this technique is especially suited for applications in semiconducting materials. \\\\ \\\\ Channelling measurements in Si, GaAs and GaP implanted with In-, Cd- and Xe-isotopes have demonstrated that impurity lattice sites can be studied directly after implantation without any annealing. The electron-channelling technique can be ideally combined with hyperfine interaction techniques like Moessbauer s This was shown for the formation of In-vacancy complexes in ion-implanted Ni. \\\\ \\\\ We intend to continue the lattice location measurements in semiconductors implanted with various radioactive impurities of Cd, In, Sn, Sb and Te.

  19. Numerical model for stack gas diffusion in terrain with buildings. Variations in air flow and gas concentration with additional building near stack

    International Nuclear Information System (INIS)

    Sada, Koichi; Michioka, Takenobu; Ichikawa, Yoichi; Komiyama, Sumito; Numata, Kunio

    2009-01-01

    A numerical simulation method for predicting atmospheric flow and stack gas diffusion using a calculation domain of several km around a stack under complex terrain conditions containing buildings has been developed. The turbulence closure technique using a modified k-ε-type model without a hydrostatic approximation was used for flow calculation, and some of the calculation grids near the ground were treated as buildings using a terrain-following coordinate system. Stack gas diffusion was predicted using the Lagrangian particle model, that is, the stack gas was represented by trajectories of released particles. The developed numerical model was applied to a virtual terrain and building conditions in this study prior to the applications of a numerical model for real terrain and building conditions. The height of the additional building (H a ), located about 200 m leeward from the stack, was varied (i.e., H a =0, 20, 30 and 50 m), and its effects on airflow and the concentration of stack gas at a released height of 75 m were calculated. Furthermore, effective stack height, which was used in the safety analysis of atmospheric diffusion for nuclear facilities in Japan, was evaluated from the calculated ground-level concentration of stack gas. The cavity region behind the additional building was calculated, and turbulence near the cavity was observed to decrease when the additional building was present. According to these flow variations with the additional building, tracer gas tended to diffuse to the ground surface rapidly with the additional building at the leeward position of the cavity, and the ground-level stack gas concentration along the plume axis also increased with the height of the additional building. However, the variations in effective stack height with the height of the additional building were relatively small and ranged within several m in this study. (author)

  20. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Golnaz Karbasian

    2017-03-01

    Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

  1. Density of oxidation-induced stacking faults in damaged silicon

    NARCIS (Netherlands)

    Kuper, F.G.; Hosson, J.Th.M. De; Verwey, J.F.

    1986-01-01

    A model for the relation between density and length of oxidation-induced stacking faults on damaged silicon surfaces is proposed, based on interactions of stacking faults with dislocations and neighboring stacking faults. The model agrees with experiments.

  2. Finite-lattice-spacing corrections to masses and g factors on a lattice

    International Nuclear Information System (INIS)

    Roskies, R.; Wu, J.C.

    1986-01-01

    We suggest an alternative method for extracting masses and g factors from lattice calculations. Our method takes account of more of the infrared and ultraviolet lattice effects. It leads to more reasonable results in simulations of QED on a lattice

  3. Mechanical alloying of Cu-xCr (x = 3, 5 and 8 wt.%) alloys

    International Nuclear Information System (INIS)

    Aguilar, C.; Ordonez, S.; Guzman, D.; Rojas, P.A.

    2010-01-01

    This work studies the structural evolution of Cu-xCr (x = 3, 5 and 8 wt.%) alloys processed by mechanical alloying using X-ray diffraction profiles, scanning microscopy and microhardness analysis. X-ray diffraction analysis using the modified Williamson-Hall and Warren-Averbach methods were used to determine structural properties, such as crystallite size, stacking fault probability and energy, dislocation density, lattice parameters and crystallite size distribution of metallic powder as a function of Cr amount and milling time. Lattice defects increase the Gibbs free energy and the Gibbs free energy curves shift upward, therefore the solubility limit change.

  4. Lattices for laymen: a non-specialist's introduction to lattice gauge theory

    International Nuclear Information System (INIS)

    Callaway, D.J.E.

    1985-01-01

    The review on lattice gauge theory is based upon a series of lectures given to the Materials Science and Technology Division at Argonne National Laboratory. Firstly the structure of gauge theories in the continuum is discussed. Then the lattice formulation of these theories is presented, including quantum electrodynamics and non-abelian lattice gauge theories. (U.K.)

  5. High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

    International Nuclear Information System (INIS)

    Ping, Mao; Zhi-Gang, Zhang; Li-Yang, Pan; Jun, Xu; Pei-Yi, Chen

    2009-01-01

    Stacked ruthenium (Ru) nanocrystals (NCs) are formed by rapid thermal annealing for the whole gate stacks and embedded in memory structure, which is compatible with conventional CMOS technology. Ru NCs with high density (3 × 10 12 cm −2 ), small size (2–4 nm) and good uniformity both in aerial distribution and morphology are formed. Attributed to the higher surface trap density, a memory window of 5.2 V is obtained with stacked Ru NCs in comparison to that of 3.5 V with single-layer samples. The stacked Ru NCs device also exhibits much better retention performance because of Coulomb blockade and vertical uniformity between stacked Ru NCs

  6. Lattice QCD on fine lattices

    Energy Technology Data Exchange (ETDEWEB)

    Schaefer, Stefan [DESY (Germany). Neumann Inst. for Computing

    2016-11-01

    These configurations are currently in use in many on-going projects carried out by researchers throughout Europe. In particular this data will serve as an essential input into the computation of the coupling constant of QCD, where some of the simulations are still on-going. But also projects computing the masses of hadrons and investigating their structure are underway as well as activities in the physics of heavy quarks. As this initial project of gauge field generation has been successful, it is worthwhile to extend the currently available ensembles with further points in parameter space. These will allow to further study and control systematic effects like the ones introduced by the finite volume, the non-physical quark masses and the finite lattice spacing. In particular certain compromises have still been made in the region where pion masses and lattice spacing are both small. This is because physical pion masses require larger lattices to keep the effects of the finite volume under control. At light pion masses, a precise control of the continuum extrapolation is therefore difficult, but certainly a main goal of future simulations. To reach this goal, algorithmic developments as well as faster hardware will be needed.

  7. Vertical melting of a stack of membranes

    Science.gov (United States)

    Borelli, M. E. S.; Kleinert, H.; Schakel, A. M. J.

    2001-02-01

    A stack of tensionless membranes with nonlinear curvature energy and vertical harmonic interaction is studied. At low temperatures, the system forms a lamellar phase. At a critical temperature, the stack disorders vertically in a melting-like transition.

  8. Slip-stacking Dynamics for High-Power Proton Beams at Fermilab

    Energy Technology Data Exchange (ETDEWEB)

    Eldred, Jeffrey Scott [Indiana Univ., Bloomington, IN (United States)

    2015-12-01

    Slip-stacking is a particle accelerator configuration used to store two particle beams with different momenta in the same ring. The two beams are longitudinally focused by two radiofrequency (RF) cavities with a small frequency difference between them. Each beam is synchronized to one RF cavity and perturbed by the other RF cavity. Fermilab uses slip-stacking in the Recycler so as to double the power of the 120 GeV proton beam in the Main Injector. This dissertation investigates the dynamics of slip-stacking beams analytically, numerically and experimentally. In the analytic analysis, I find the general trajectory of stable slip-stacking particles and identify the slip-stacking parametric resonances. In the numerical analysis, I characterize the stable phase-space area and model the particle losses. In particular, I evaluate the impact of upgrading the Fermilab Booster cycle-rate from 15 Hz to 20 Hz as part of the Proton Improvement Plan II (PIP-II). The experimental analysis is used to verify my approach to simulating slip-stacking loss. I design a study for measuring losses from the longitudinal single-particle dynamics of slip-stacking as a function of RF cavity voltage and RF frequency separation. I further propose the installation of a harmonic RF cavity and study the dynamics of this novel slip-stacking configuration. I show the harmonic RF cavity cancels out parametric resonances in slip-stacking, reduces emittance growth during slip-stacking, and dramatically enhances the stable phase-space area. The harmonic cavity is expected to reduce slip-stacking losses to far exceed PIP-II requirements. These results raise the possibility of extending slip-stacking beyond the PIP-II era.

  9. A search for the coherently radiating fluxon state in stacks of long intrinsic Josephson junctions

    CERN Document Server

    Lee, H J; Bae, M H; Wang, H; Yamashita, T

    2002-01-01

    We studied the motion of fluxons in a stack of intrinsic Josephson junctions (IJJs) of Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8 sub + subdelta single crystals in a long junction limit. Driven by the tunnelling bias, current Josephson fluxons excite plasma oscillations and move in resonance with the plasma propagation modes. We examined two types of samples in this study; mesa structure (UD1) and a stack of junctions sandwiched between normal-metallic electrodes (DSC1). In a high magnetic field, the hysteresis in the I-V characteristics of both-types of samples vanished. The resulting single I-V curve exhibited a cusp structure at characteristic bias voltages which were believed to be boundaries of different moving fluxon configurations. We studied the sample-geometry dependence of the cusp characteristics by comparing the results from the two types of samples.

  10. Simulating Photons and Plasmons in a Three-dimensional Lattice

    International Nuclear Information System (INIS)

    Pletzer, A.; Shvets, G.

    2002-01-01

    Three-dimensional metallic photonic structures are studied using a newly developed mixed finite element-finite difference (FE-FD) code, Curly3d. The code solves the vector Helmholtz equation as an eigenvalue problem in the unit cell of a triply periodic lattice composed of conductors and/or dielectrics. The mixed FE-FD discretization scheme ensures rapid numerical convergence of the eigenvalue and allows the code to run at low resolution. Plasmon and photonic band structure calculations are presented

  11. Multilayer Piezoelectric Stack Actuator Characterization

    Science.gov (United States)

    Sherrit, Stewart; Jones, Christopher M.; Aldrich, Jack B.; Blodget, Chad; Bao, Xioaqi; Badescu, Mircea; Bar-Cohen, Yoseph

    2008-01-01

    Future NASA missions are increasingly seeking to use actuators for precision positioning to accuracies of the order of fractions of a nanometer. For this purpose, multilayer piezoelectric stacks are being considered as actuators for driving these precision mechanisms. In this study, sets of commercial PZT stacks were tested in various AC and DC conditions at both nominal and extreme temperatures and voltages. AC signal testing included impedance, capacitance and dielectric loss factor of each actuator as a function of the small-signal driving sinusoidal frequency, and the ambient temperature. DC signal testing includes leakage current and displacement as a function of the applied DC voltage. The applied DC voltage was increased to over eight times the manufacturers' specifications to investigate the correlation between leakage current and breakdown voltage. Resonance characterization as a function of temperature was done over a temperature range of -180C to +200C which generally exceeded the manufacturers' specifications. In order to study the lifetime performance of these stacks, five actuators from one manufacturer were driven by a 60volt, 2 kHz sine-wave for ten billion cycles. The tests were performed using a Lab-View controlled automated data acquisition system that monitored the waveform of the stack electrical current and voltage. The measurements included the displacement, impedance, capacitance and leakage current and the analysis of the experimental results will be presented.

  12. Characterization of Piezoelectric Stacks for Space Applications

    Science.gov (United States)

    Sherrit, Stewart; Jones, Christopher; Aldrich, Jack; Blodget, Chad; Bao, Xiaoqi; Badescu, Mircea; Bar-Cohen, Yoseph

    2008-01-01

    Future NASA missions are increasingly seeking to actuate mechanisms to precision levels in the nanometer range and below. Co-fired multilayer piezoelectric stacks offer the required actuation precision that is needed for such mechanisms. To obtain performance statistics and determine reliability for extended use, sets of commercial PZT stacks were tested in various AC and DC conditions at both nominal and high temperatures and voltages. In order to study the lifetime performance of these stacks, five actuators were driven sinusoidally for up to ten billion cycles. An automated data acquisition system was developed and implemented to monitor each stack's electrical current and voltage waveforms over the life of the test. As part of the monitoring tests, the displacement, impedance, capacitance and leakage current were measured to assess the operation degradation. This paper presents some of the results of this effort.

  13. Influence of strain gradients on lattice rotation in nano-indentation experiments: A numerical study

    KAUST Repository

    Demiral, Murat

    2014-07-01

    In this paper the texture evolution in nano-indentation experiments was investigated numerically. To achieve this, a three-dimensional implicit finite-element model incorporating a strain-gradient crystal-plasticity theory was developed to represent accurately the deformation of a body-centred cubic metallic material. A hardening model was implemented to account for strain hardening of the involved slip systems. The surface topography around indents in different crystallographic orientations was compared to corresponding lattice rotations. The influence of strain gradients on the prediction of lattice rotations in nano-indentation was critically assessed. © 2014 Elsevier B.V..

  14. Influence of strain gradients on lattice rotation in nano-indentation experiments: A numerical study

    KAUST Repository

    Demiral, Murat; Roy, Anish; El Sayed, Tamer S.; Silberschmidt, Vadim V.

    2014-01-01

    In this paper the texture evolution in nano-indentation experiments was investigated numerically. To achieve this, a three-dimensional implicit finite-element model incorporating a strain-gradient crystal-plasticity theory was developed to represent accurately the deformation of a body-centred cubic metallic material. A hardening model was implemented to account for strain hardening of the involved slip systems. The surface topography around indents in different crystallographic orientations was compared to corresponding lattice rotations. The influence of strain gradients on the prediction of lattice rotations in nano-indentation was critically assessed. © 2014 Elsevier B.V..

  15. Turbostratic stacked CVD graphene for high-performance devices

    Science.gov (United States)

    Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

    2018-03-01

    We have fabricated turbostratic stacked graphene with high-transport properties by the repeated transfer of CVD monolayer graphene. The turbostratic stacked CVD graphene exhibited higher carrier mobility and conductivity than CVD monolayer graphene. The electron mobility for the three-layer turbostratic stacked CVD graphene surpassed 10,000 cm2 V-1 s-1 at room temperature, which is five times greater than that for CVD monolayer graphene. The results indicate that the high performance is derived from maintenance of the linear band dispersion, suppression of the carrier scattering, and parallel conduction. Therefore, turbostratic stacked CVD graphene is a superior material for high-performance devices.

  16. Calculation of deuteron interactions within micro-cracks of a D2 loaded lattice at room temperature

    International Nuclear Information System (INIS)

    Fulvio, F.

    2007-01-01

    We have analyzed the possibility that the coefficient of lattice deformation, linked to the formation of micro-cracks at room temperature and low energies, could influence the process of fusion. The calculated probability of fusion within a micro-crack, in the presence of D 2 loading at room temperature and for impure metals, shows moderately elevated values compared with the probability of fusion on the surface. For all the temperatures in the 150-350 K range and for all the energies between 150 and 250 eV, the formation of micro-cracks increases the probability of fusion compared to non-deformed lattices, and also reduces the thickness of the Coulomb barrier. Using the trend of the curve of potential to evaluate the influence of the concentration of impurities, a very high barrier is found within the pure lattice (J ∼ 0.25%). However, under the same thermodynamic conditions, the probability of fusion in the impure metal (J ∼ 0.75%) could be higher, with a total energy less than the potential so that the tunneling effect is amplified. Finally, we have analysed the influence of forced D 2 loading on the process. (author)

  17. On singularities of lattice varieties

    OpenAIRE

    Mukherjee, Himadri

    2013-01-01

    Toric varieties associated with distributive lattices arise as a fibre of a flat degeneration of a Schubert variety in a minuscule. The singular locus of these varieties has been studied by various authors. In this article we prove that the number of diamonds incident on a lattice point $\\a$ in a product of chain lattices is more than or equal to the codimension of the lattice. Using this we also show that the lattice varieties associated with product of chain lattices is smooth.

  18. OpenStack augstas pieejamības risinājumi

    OpenAIRE

    Dreiže, Toms

    2016-01-01

    Šis bakalaura darbs ir pētījums par OpenStack IaaS mākoņpakalpojumu platformu. Tā mērķis ir sniegt ieskatu augstas pieejamības pamatprincipos un OpenStack mākoņpakalpojumu platformas piedāvātajos augstas pieejamības nodrošināšanas risinājumos. Bakalaura darba gaitā ir veikta augsti pieejamas OpenStack trīs mezglu sistēmas uzstādīšana, izmantojot Galera Cluster datubāzu klasteri un HAProxy slodzes līdzsvarotāju. Tika pārbaudīta OpenStack augsta pieejamība, testējot OpenStack Glance komponentes...

  19. Low leakage stoichiometric SrTiO{sub 3} dielectric for advanced metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Popovici, Mihaela; Kaczer, Ben; Redolfi, Augusto; Elshocht, Sven van; Jurczak, Malgorzata [imec Belgium, Leuven (Belgium); Afanas' ev, Valeri V. [Department of Physics and Astronomy, KU Leuven (Belgium); Sereni, Gabriele [DISMI, Universita degli Studi di Modena e Reggio Emilia, (Italy); Larcher, Luca [DISMI, Universita degli Studi di Modena e Reggio Emilia, (Italy); MDLab, Saint Christophe (Italy)

    2016-05-15

    Metal-insulator-metal capacitors (MIMCAP) with stoichiometric SrTiO{sub 3} dielectric were deposited stacking two strontium titanate (STO) layers, followed by intermixing the grain determining Sr-rich STO seed layer, with the Ti-rich STO top layer. The resulted stoichiometric SrTiO{sub 3} would have a structure with less defects as demonstrated by internal photoemission experiments. Consequently, the leakage current density is lower compared to Sr-rich STO which allow further equivalent oxide thickness downscaling. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Efficiency of Polymer Electrolyte Membrane Fuel Cell Stack

    Directory of Open Access Journals (Sweden)

    Hans Bosma

    2011-08-01

    Full Text Available This paper applies a feedforward control of optimal oxygen excess ratio that maximize net power (improve efficiency of a NedStack P8.0-64 PEM fuel cell stack (FCS system. Net powers profile as a function of oxygen excess ratio for some points of operation are analyzed by using FCS model. The relationships between stack current and the corresponding control input voltage that gives an optimal oxygen excess ratio are used to design a feedforward control scheme. The results of this scheme are compared to the results of a feedforward control using a constant oxygen excess ratio. Simulation results show that optimal oxygen excess ratio improves fuel cell performance compared to the results of constant oxygen excess ratio. The same procedures are performed experimentally for the FCS system. The behaviour of the net power of the fuel cell stack with respect to the variation of oxygen excess ratio is analyzed to obtain optimal values. Data of stack current and the corresponding voltage input to the compressor that gives optimal values of oxygen excess ratio are used to develop a feedforward control. Feedforward control based on constant and optimal oxygen excess ratio control, are implemented in the NedStack P8.0-64 PEM fuel cell stack system by using LabVIEW. Implementation results shows that optimal oxygen excess ratio control improves the fuel cell performance compared to the constant oxygen excess ratio control.

  1. Advances in Metal Supported Cells in the METSOFC EU Consortium

    DEFF Research Database (Denmark)

    McKenna, Brandon J.; Christiansen, Niels; Schauperl, Richard

    2012-01-01

    Employing a mechanically robust metal support as the structural element in SOFC has been the objective of various development efforts. The EU-sponsored project “METSOFC”, completed at the end of 2011, resulted in a number of advancements towards implementing this strategy. These include robust me...... outcomes of the METSOFC consortium are covered, along with associated work supported by the Danish National Advanced Technology Foundation.......Employing a mechanically robust metal support as the structural element in SOFC has been the objective of various development efforts. The EU-sponsored project “METSOFC”, completed at the end of 2011, resulted in a number of advancements towards implementing this strategy. These include robust...... metal supported cells (MSCs) having low ASR at low temperature, incorporation into small stacks of powers approaching ½kW, and stack tolerance to various operation cycles. DTU Energy Conversion's (formerly Risø DTU) research into planar MSCs has produced an advanced cell design with high performance...

  2. Description of gasket failure in a 7 cell PEMFC stack

    Energy Technology Data Exchange (ETDEWEB)

    Husar, Attila; Serra, Maria [Institut de Robotica i Informatica Industrial, Parc Tecnologic de Barcelona, Edifici U, C. Llorens i Artigas, 4-6, 2a Planta, 08028 Barcelona (Spain); Kunusch, Cristian [Laboratorio de Electronica Industrial Control e Instrumentacion, Facultad de Ingenieria, UNLP (Argentina)

    2007-06-10

    This article presents the data and the description of a fuel cell stack that failed due to gasket degradation. The fuel cell under study is a 7 cell stack. The unexpected change in several variables such as temperature, pressure and voltage indicated the possible failure of the stack. The stack was monitored over a 6 h period in which data was collected and consequently analyzed to conclude that the fuel cell stack failed due to a crossover leak on the anode inlet port located on the cathode side gasket of cell 2. This stack failure analysis revealed a series of indicators that could be used by a super visional controller in order to initiate a shutdown procedure. (author)

  3. Reactor lattice codes

    International Nuclear Information System (INIS)

    Kulikowska, T.

    2001-01-01

    The description of reactor lattice codes is carried out on the example of the WIMSD-5B code. The WIMS code in its various version is the most recognised lattice code. It is used in all parts of the world for calculations of research and power reactors. The version WIMSD-5B is distributed free of charge by NEA Data Bank. The description of its main features given in the present lecture follows the aspects defined previously for lattice calculations in the lecture on Reactor Lattice Transport Calculations. The spatial models are described, and the approach to the energy treatment is given. Finally the specific algorithm applied in fuel depletion calculations is outlined. (author)

  4. Variation of long-period stacking order structures in rapidly solidified Mg97Zn1Y2 alloy

    International Nuclear Information System (INIS)

    Matsuda, M.; Ii, S.; Kawamura, Y.; Ikuhara, Y.; Nishida, M.

    2005-01-01

    The long-period stacking order (LPSO) structures in rapidly solidified Mg 97 Zn 1 Y 2 alloy have been studied by conventional and high-resolution transmission electron microscopes (HRTEMs). There are four kinds of stacking sequences in the LPSO structures, i.e., 18R of ABABABCACACABCBCBC, 14H of ACBCBABABABCBC, 10H of ABACBCBCAB and 24R of ABABABABCACACACABCBCBCBC. The 18R structure is dominantly observed in the present study. The rest three are occasionally observed in places. The 10H and 24R structures are recently discovered. The lattice constants of 18R(1-bar 1-bar -bar 1-bar 1-bar -bar 2) 3 , 14H(2-bar -bar 1-bar 2-bar -bar 1-bar 1-bar -bar 1-bar 1-bar -bar 2-bar 1-bar -bar 2), 10H(1-bar 3-bar -bar 1-bar 1-bar -bar 3-bar 1-bar ) and 24R(1-bar 1-bar -bar 1-bar 1-bar -bar 1-bar 1-bar -bar 2) 3 structures are estimated to be a=0.320nm and c=4.678nm, a=0.325nm and c=3.694nm, a=0.325nm and c=2.603nm, a=0.322nm and c=6.181nm for the hexagonal structure, respectively

  5. Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness

    Science.gov (United States)

    Angelova, T.; Cros, A.; Cantarero, A.; Fuster, D.; González, Y.; González, L.

    2008-08-01

    Self-assembled InAs/InP (001) quantum wire stacks have been investigated by means of Raman scattering. The characteristics of the observed vibrational modes show clear evidence of confinement and atomic intermixing between As and P atoms from the wire and the spacer. The change in the intermixing with spacer layer thickness and growth temperature is investigated. Likewise, the effect of annealing on the exchange of As and P atoms is also studied. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the InAs E1 critical point. Finally, the energy of the interface modes is related to the structural characteristics of the wires by comparing the experimental data with a lattice dynamic calculation based on the dielectric continuum model.

  6. Lattice topology dictates photon statistics.

    Science.gov (United States)

    Kondakci, H Esat; Abouraddy, Ayman F; Saleh, Bahaa E A

    2017-08-21

    Propagation of coherent light through a disordered network is accompanied by randomization and possible conversion into thermal light. Here, we show that network topology plays a decisive role in determining the statistics of the emerging field if the underlying lattice is endowed with chiral symmetry. In such lattices, eigenmode pairs come in skew-symmetric pairs with oppositely signed eigenvalues. By examining one-dimensional arrays of randomly coupled waveguides arranged on linear and ring topologies, we are led to a remarkable prediction: the field circularity and the photon statistics in ring lattices are dictated by its parity while the same quantities are insensitive to the parity of a linear lattice. For a ring lattice, adding or subtracting a single lattice site can switch the photon statistics from super-thermal to sub-thermal, or vice versa. This behavior is understood by examining the real and imaginary fields on a lattice exhibiting chiral symmetry, which form two strands that interleave along the lattice sites. These strands can be fully braided around an even-sited ring lattice thereby producing super-thermal photon statistics, while an odd-sited lattice is incommensurate with such an arrangement and the statistics become sub-thermal.

  7. 400 W High Temperature PEM Fuel Cell Stack Test

    DEFF Research Database (Denmark)

    Andreasen, Søren Juhl; Kær, Søren Knudsen

    2006-01-01

    This work demonstrates the operation of a 30 cell high temperature PEM (HTPEM) fuel cell stack. This prototype stack has been developed at the Institute of Energy Technology, Aalborg University, as a proof-of-concept for a low pressure cathode air cooled HTPEM stack. The membranes used are Celtec...

  8. Liquid-metal-cooled reactor

    International Nuclear Information System (INIS)

    Zhuchkov, I.I.; Filonov, V.S.; Zaitsev, B.I.; Artemiev, L.N.; Rakhimov, V.V.

    1976-01-01

    A liquid-metal-cooled reactor is described comprising two rotatable plugs, one of them, having at least one hole, being arranged internally of the other, a recharging mechanism with a guide tube adapted to be moved through the hole of the first plug by means of a drive, and a device for detecting stacks with leaky fuel elements, the recharging mechanism tube serving as a sampler

  9. Mesoscale models for stacking faults, deformation twins and martensitic transformations: Linking atomistics to continuum

    Science.gov (United States)

    Kibey, Sandeep A.

    We present a hierarchical approach that spans multiple length scales to describe defect formation---in particular, formation of stacking faults (SFs) and deformation twins---in fcc crystals. We link the energy pathways (calculated here via ab initio density functional theory, DFT) associated with formation of stacking faults and twins to corresponding heterogeneous defect nucleation models (described through mesoscale dislocation mechanics). Through the generalized Peieirls-Nabarro model, we first correlate the width of intrinsic SFs in fcc alloy systems to their nucleation pathways called generalized stacking fault energies (GSFE). We then establish a qualitative dependence of twinning tendency in fee metals and alloys---specifically, in pure Cu and dilute Cu-xAl (x= 5.0 and 8.3 at.%)---on their twin-energy pathways called the generalized planar fault energies (GPFE). We also link the twinning behavior of Cu-Al alloys to their electronic structure by determining the effect of solute Al on the valence charge density redistribution at the SF through ab initio DFT. Further, while several efforts have been undertaken to incorporate twinning for predicting stress-strain response of fcc materials, a fundamental law for critical twinning stress has not yet emerged. We resolve this long-standing issue by linking quantitatively the twin-energy pathways (GPFE) obtained via ab initio DFT to heterogeneous, dislocation-based twin nucleation models. We establish an analytical expression that quantitatively predicts the critical twinning stress in fcc metals in agreement with experiments without requiring any empiricism at any length scale. Our theory connects twinning stress to twin-energy pathways and predicts a monotonic relation between stress and unstable twin stacking fault energy revealing the physics of twinning. We further demonstrate that the theory holds for fcc alloys as well. Our theory inherently accounts for directional nature of twinning which available

  10. Lattice theory for nonspecialists

    International Nuclear Information System (INIS)

    Hari Dass, N.D.

    1984-01-01

    These lectures were delivered as part of the academic training programme at the NIKHEF-H. These lectures were intended primarily for experimentalists, and theorists not specializing in lattice methods. The goal was to present the essential spirit behind the lattice approach and consequently the author has concentrated mostly on issues of principle rather than on presenting a large amount of detail. In particular, the author emphasizes the deep theoretical infra-structure that has made lattice studies meaningful. At the same time, he has avoided the use of heavy formalisms as they tend to obscure the basic issues for people trying to approach this subject for the first time. The essential ideas are illustrated with elementary soluble examples not involving complicated mathematics. The following subjects are discussed: three ways of solving the harmonic oscillator problem; latticization; gauge fields on a lattice; QCD observables; how to solve lattice theories. (Auth.)

  11. Lattice dynamics of silver and gold on Krebs's model

    International Nuclear Information System (INIS)

    Bertolo, L.A.; Shukla, M.M.

    1975-01-01

    Phonon dispersion relations along the principal symmetry directions of gold and silver have been calculated for phonons propagating at room temperature. The calculated curves are compared with the recent experimental findings. Also calculated are the lattice heat capacities of these metals at absolute zero temperature. Computed(theta - T) curves of them show good agreements with experimental results. The effect of various forms of the dielectric screening functions on the calculated phonon spectrum of gold and silver has also been investigated

  12. Crystalline structure of metals

    International Nuclear Information System (INIS)

    Holas, A.

    1972-01-01

    An attempt is made to find the crystalline structure of metals on the basis of the existing theory of metals. The considerations are limited to the case of free crystals, that is, not subjected to any stresses and with T=0. The energy of the crystal lattice has been defined and the dependence of each term on structures and other properties of metals has been described. The energy has been used to find the values of crystalline structure parameters as the values at which the energy has an absolute minimum. The stability of the structure has been considered in cases of volume changes and shearing deformations. A semiqualitative description has been obtained which explains characteristic properties of one-electron metals. (S.B.)

  13. Dynamic Model of High Temperature PEM Fuel Cell Stack Temperature

    DEFF Research Database (Denmark)

    Andreasen, Søren Juhl; Kær, Søren Knudsen

    2007-01-01

    cathode air cooled 30 cell HTPEM fuel cell stack developed at the Institute of Energy Technology at Aalborg University. This fuel cell stack uses PEMEAS Celtec P-1000 membranes, runs on pure hydrogen in a dead end anode configuration with a purge valve. The cooling of the stack is managed by running......The present work involves the development of a model for predicting the dynamic temperature of a high temperature PEM (HTPEM) fuel cell stack. The model is developed to test different thermal control strategies before implementing them in the actual system. The test system consists of a prototype...... the stack at a high stoichiometric air flow. This is possible because of the PBI fuel cell membranes used, and the very low pressure drop in the stack. The model consists of a discrete thermal model dividing the stack into three parts: inlet, middle and end and predicting the temperatures in these three...

  14. Enhancement of stack ventilation in hot and humid climate using a combination of roof solar collector and vertical stack

    Energy Technology Data Exchange (ETDEWEB)

    Yusoff, Wardah Fatimah Mohammad; Salleh, Elias [Department of Architecture, Faculty of Design and Architecture, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Adam, Nor Mariah [Department of Mechanical and Manufacturing Engineering, Faculty of Engineering, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Sapian, Abdul Razak [Department of Architecture, Kulliyyah of Architecture and Environmental Design, International Islamic University Malaysia, P.O. Box 10, 50728 Kuala Lumpur (Malaysia); Yusof Sulaiman, Mohamad [Solar Energy Research Institute, 3rd Floor, Tun Sri Lanang Library Building, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

    2010-10-15

    In the hot and humid climate, stack ventilation is inefficient due to small temperature difference between the inside and outside of naturally ventilated buildings. Hence, solar induced ventilation is a feasible alternative in enhancing the stack ventilation. This paper aims to investigate the effectiveness of a proposed solar induced ventilation strategy, which combines a roof solar collector and a vertical stack, in enhancing the stack ventilation performance in the hot and humid climate. The methodology selected for the investigation is physical experimental modelling which was carried out in the actual environment. The results are presented and discussed in terms of two performance variables: air temperature and air velocity. The findings indicate that the proposed strategy is able to enhance the stack ventilation, both in semi-clear sky and overcast sky conditions. The highest air temperature difference between the air inside the stack and the ambient air (T{sub i}-T{sub o}) is achieved in the semi-clear sky condition, which is about 9.9 C (45.8 C-35.9 C). Meanwhile, in the overcast sky condition, the highest air temperature difference (T{sub i}-T{sub o}) is 6.2 C (39.3 C-33.1 C). The experimental results also indicate good agreement with the theoretical results for the glass temperature, the air temperature in the roof solar collector's channel and the absorber temperature. The findings also show that wind has significant effect to the induced air velocity by the proposed strategy. (author)

  15. MEETING: Lattice 88

    Energy Technology Data Exchange (ETDEWEB)

    Mackenzie, Paul

    1989-03-15

    The forty-year dream of understanding the properties of the strongly interacting particles from first principles is now approaching reality. Quantum chromodynamics (QCD - the field theory of the quark and gluon constituents of strongly interacting particles) was initially handicapped by the severe limitations of the conventional (perturbation) approach in this picture, but Ken Wilson's inventions of lattice gauge theory and renormalization group methods opened new doors, making calculations of masses and other particle properties possible. Lattice gauge theory became a major industry around 1980, when Monte Carlo methods were introduced, and the first prototype calculations yielded qualitatively reasonable results. The promising developments over the past year were highlighted at the 1988 Symposium on Lattice Field Theory - Lattice 88 - held at Fermilab.

  16. MEETING: Lattice 88

    International Nuclear Information System (INIS)

    Mackenzie, Paul

    1989-01-01

    The forty-year dream of understanding the properties of the strongly interacting particles from first principles is now approaching reality. Quantum chromodynamics (QCD - the field theory of the quark and gluon constituents of strongly interacting particles) was initially handicapped by the severe limitations of the conventional (perturbation) approach in this picture, but Ken Wilson's inventions of lattice gauge theory and renormalization group methods opened new doors, making calculations of masses and other particle properties possible. Lattice gauge theory became a major industry around 1980, when Monte Carlo methods were introduced, and the first prototype calculations yielded qualitatively reasonable results. The promising developments over the past year were highlighted at the 1988 Symposium on Lattice Field Theory - Lattice 88 - held at Fermilab

  17. Complementary and bipolar regimes of resistive switching in TiN/HfO{sub 2}/TiN stacks grown by atomic-layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Egorov, K.V.; Kirtaev, R.V.; Markeev, A.M.; Zablotskiy, A.V. [Moscow Institute of Physics and Technology, Institutskii per. 9, 141700, Dolgoprudny (Russian Federation); Lebedinskii, Yu.Yu.; Matveyev, Yu.A.; Zenkevich, A.V. [Moscow Institute of Physics and Technology, Institutskii per. 9, 141700, Dolgoprudny (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoye shosse 31, 115409, Moscow (Russian Federation); Orlov, O.M. [Scientific Research Institute of Molecular Electronics and Plant ' ' Micron' ' , 124462, Zelenograd (Russian Federation)

    2015-04-01

    Atomic-layer deposition (ALD) technique in combination with in vacuo X-ray photoelectron spectroscopy (XPS) analysis has been successfully employed to obtain fully ALD-grown planar TiN/HfO{sub 2}/TiN metal-insulator-metal structures for resistive random access memory (ReRAM) memory elements. In vacuo XPS analysis of ALD-grown TiN/HfO{sub 2}/TiN stacks reveals the presence of the ultrathin oxidized layers consisting of TiON (∝0.5 nm) and TiO{sub 2} (∝0.6 nm) at the bottom TiN/HfO{sub 2} interface (i); the nonoxidized TiN at the top HfO{sub 2}/TiN interface (ii); the oxygen deficiency in the HfO{sub 2} layer does not exceed the XPS detection limit (iii). Electroformed ALD TiN/HfO{sub 2}/TiN stacks reveal both conventional bipolar and complementary types of resistive switching. In the complementary resistive switching regime, each programming sequence is terminated by a reset operation, leaving the TiN/HfO{sub 2}/TiN stack in a high-resistance state. The observed feature can avoid detrimental leaky paths during successive reading operation, which is useful in the passive ReRAM arrays without a selector element. The bipolar regime of resistive switching is found to reveal the gradual character of the SET and RESET switching processes. Long-term potentiation and depression tests performed on ALD-grown TiN/HfO{sub 2}/TiN stacks indicate that they can be used as electronic synapse devices for the implementation of emerging neuromorphic computation systems. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Influence of processing parameters on lattice parameters in laser deposited tool alloy steel

    Energy Technology Data Exchange (ETDEWEB)

    Sun, G.F., E-mail: gfsun82@gmail.com [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States); School of Mechanical Engineering, Jiangsu University, Zhenjiang, Jiangsu, 212013 (China); Bhattacharya, S. [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States); Dinda, G.P.; Dasgupta, A. [Center for Advanced Technologies, Focus: Hope, Detroit, MI, 48238 (United States); Mazumder, J. [Center for Laser-Aided Intelligent Manufacturing, University of Michigan, Ann Arbor, MI, 48109 (United States)

    2011-06-15

    Highlights: {yields} Orientation relationships among phases in the DMD are given. {yields} Martensite lattice parameters increased with laser specific energy. {yields} Austenite lattice parameters decreased with laser specific energy. - Abstract: Laser aided direct metal deposition (DMD) has been used to form AISI 4340 steel coating on the AISI 4140 steel substrate. The microstructural property of the DMD coating was analyzed by means of scanning electron microscopy, transmission electron microscopy and X-ray diffractometry. Microhardness of the DMD was measured with a Vickers microhardness tester. Results indicate that DMD can be used to form dense AISI 4340 steel coatings on AISI 4140 steel substrate. The DMD coating is mainly composed of martensite and retained austenite. Consecutive thermal cycles have a remarkable effect on the microstructure of the plan view of the DMD coating and on the corresponding microhardness distribution. Orientation relationships among austenite, martensite and cementite in the DMD coating followed the ones in conventional heat treated steels. As the laser specific energy decreased, cooling rate increased, and martensite peaks broadened and shifted to a lower Bragg's angle. Also martensite lattice parameters increased and austenite lattice parameters decreased due to the above parameter change.

  19. Influence of processing parameters on lattice parameters in laser deposited tool alloy steel

    International Nuclear Information System (INIS)

    Sun, G.F.; Bhattacharya, S.; Dinda, G.P.; Dasgupta, A.; Mazumder, J.

    2011-01-01

    Highlights: → Orientation relationships among phases in the DMD are given. → Martensite lattice parameters increased with laser specific energy. → Austenite lattice parameters decreased with laser specific energy. - Abstract: Laser aided direct metal deposition (DMD) has been used to form AISI 4340 steel coating on the AISI 4140 steel substrate. The microstructural property of the DMD coating was analyzed by means of scanning electron microscopy, transmission electron microscopy and X-ray diffractometry. Microhardness of the DMD was measured with a Vickers microhardness tester. Results indicate that DMD can be used to form dense AISI 4340 steel coatings on AISI 4140 steel substrate. The DMD coating is mainly composed of martensite and retained austenite. Consecutive thermal cycles have a remarkable effect on the microstructure of the plan view of the DMD coating and on the corresponding microhardness distribution. Orientation relationships among austenite, martensite and cementite in the DMD coating followed the ones in conventional heat treated steels. As the laser specific energy decreased, cooling rate increased, and martensite peaks broadened and shifted to a lower Bragg's angle. Also martensite lattice parameters increased and austenite lattice parameters decreased due to the above parameter change.

  20. Local Conduction in Mo xW1- xSe2: The Role of Stacking Faults, Defects, and Alloying.

    Science.gov (United States)

    Bampoulis, Pantelis; Sotthewes, Kai; Siekman, Martin H; Zandvliet, Harold J W

    2018-04-18

    Here, we report on the surface conductivity of WSe 2 and Mo x W 1- x Se 2 (0 ≤ x ≤ 1) crystals investigated with conductive atomic force microscopy. We found that stacking faults, defects, and chemical heterogeneities form distinct two-dimensional and one-dimensional conduction paths on the transition metal dichalcogenide surface. In the case of WSe 2 , in addition to step edges, we find a significant amount of stacking faults (formed during the cleaving process) that strongly influence the surface conductivity. These regions are attributed to the alternation of the 2H and 3R polytypism. The stacking faults form regular 2D patterns by alternation of the underlying stacking order, with a periodicity that varies significantly between different regions and samples. In the case of Mo x W 1- x Se 2 , its conductivity has a localized nature, which depends on the underlying chemical composition and the Mo/W ratio. Segregation to W-rich and Mo-rich regions during the growth process leads to nonuniform conduction paths on the surface of the alloy. We found a gradual change of the conductivity moving from one region to the other, reminiscent of lateral band bending. Our results demonstrate the use of C-AFM as a nanoscopic tool to probe the electrical properties of largely inhomogeneous samples and show the complicated nature of the surface conductivity of TMDC alloys.

  1. Learning SaltStack

    CERN Document Server

    Myers, Colton

    2015-01-01

    If you are a system administrator who manages multiple servers, then you know how difficult it is to keep your infrastructure in line. If you've been searching for an easier way, this book is for you. No prior experience with SaltStack is required.

  2. Nature of low dimensional structural modulations and relative phase stability in RexMo(W)1-xS2 transition metal dichalcogenide alloys

    KAUST Repository

    Sahu, R.

    2017-03-08

    We report on the various types of Peierls like two dimensional structural modulations and relative phase stability of 2H and 1T poly-types in the RexMo1-xS2 and RexW1-xS2 alloy system. Theoretical calculation predicts a polytype phase transition cross over at ∼50 at. % of Mo and W in ReS2 in both monolayer and bulk form, respectively. Experimentally, two different types of structural modulations at 50% and a modulation corresponding to trimerization at 75% alloy composition are observed for RexMo1-xS2 and only one type of modulation is observed at the 50% RexW1-xS2 alloy system. The 50% alloy system is found to be a suitable monolithic candidate for metal semiconductor transition with minute external perturbation. ReS2 is known to be in the 2D Peierls distorted 1Td structure and forms a chain like superstructure. Incorporation of Mo and W atoms into the ReS2 lattice modifies the metal-metal hybridization between the cations and influences the structural modulation and electronic properties of the system. The results offer yet another effective way to tune the electronic structure and poly-type phases of this class of materials other than intercalation, strain, and vertical stacking arrangement.

  3. Fast principal component analysis for stacking seismic data

    Science.gov (United States)

    Wu, Juan; Bai, Min

    2018-04-01

    Stacking seismic data plays an indispensable role in many steps of the seismic data processing and imaging workflow. Optimal stacking of seismic data can help mitigate seismic noise and enhance the principal components to a great extent. Traditional average-based seismic stacking methods cannot obtain optimal performance when the ambient noise is extremely strong. We propose a principal component analysis (PCA) algorithm for stacking seismic data without being sensitive to noise level. Considering the computational bottleneck of the classic PCA algorithm in processing massive seismic data, we propose an efficient PCA algorithm to make the proposed method readily applicable for industrial applications. Two numerically designed examples and one real seismic data are used to demonstrate the performance of the presented method.

  4. Calculated Specific Volumes and Magnetic Moments of the 3d Transition Metal Monoxides

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt; Andersen, O. K.; Johansson, B.

    1980-01-01

    We have performed self-consistent, spin-polarized band structure calculations as a function of the lattice spacing for the 3d metal monoxides in order to obtain the equilibrium lattice constants. The calculated binding from the 3d electrons and the occurrence of antiferromagnetism account...

  5. Stacked Heterogeneous Neural Networks for Time Series Forecasting

    Directory of Open Access Journals (Sweden)

    Florin Leon

    2010-01-01

    Full Text Available A hybrid model for time series forecasting is proposed. It is a stacked neural network, containing one normal multilayer perceptron with bipolar sigmoid activation functions, and the other with an exponential activation function in the output layer. As shown by the case studies, the proposed stacked hybrid neural model performs well on a variety of benchmark time series. The combination of weights of the two stack components that leads to optimal performance is also studied.

  6. Spectroscopic Signatures for Interlayer Coupling in MoS 2 –WSe 2 van der Waals Stacking

    KAUST Repository

    Chiu, Ming-Hui; Li, Ming-Yang; Zhang, Wengjing; Hsu, Wei-Ting; Chang, Wen-Hao; Terrones, Mauricio; Terrones, Humberto; Li, Lain-Jong

    2014-01-01

    Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 degrees C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(1g)(2) for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E '' for MoS2 at 286 cm(-1) and A(1g)(2) for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling.

  7. Spectroscopic Signatures for Interlayer Coupling in MoS 2 –WSe 2 van der Waals Stacking

    KAUST Repository

    Chiu, Ming-Hui

    2014-09-23

    Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 degrees C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(1g)(2) for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E \\'\\' for MoS2 at 286 cm(-1) and A(1g)(2) for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling.

  8. Method for applying a thin film barrier stack to a device with microstructures, and device provided with such a thin film barrier stack

    NARCIS (Netherlands)

    2005-01-01

    A method for applying a thin film barrier stack to a device with microstructures, such as, for instance, an OLED, wherein the thin film barrier stack forms a barrier to at least moisture and oxygen, wherein the stack is built up from a combination of org. and inorg. layers, characterized in that a

  9. Twisted mass lattice QCD

    International Nuclear Information System (INIS)

    Shindler, A.

    2007-07-01

    I review the theoretical foundations, properties as well as the simulation results obtained so far of a variant of the Wilson lattice QCD formulation: Wilson twisted mass lattice QCD. Emphasis is put on the discretization errors and on the effects of these discretization errors on the phase structure for Wilson-like fermions in the chiral limit. The possibility to use in lattice simulations different lattice actions for sea and valence quarks to ease the renormalization patterns of phenomenologically relevant local operators, is also discussed. (orig.)

  10. Twisted mass lattice QCD

    Energy Technology Data Exchange (ETDEWEB)

    Shindler, A. [Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany). John von Neumann-Inst. fuer Computing NIC

    2007-07-15

    I review the theoretical foundations, properties as well as the simulation results obtained so far of a variant of the Wilson lattice QCD formulation: Wilson twisted mass lattice QCD. Emphasis is put on the discretization errors and on the effects of these discretization errors on the phase structure for Wilson-like fermions in the chiral limit. The possibility to use in lattice simulations different lattice actions for sea and valence quarks to ease the renormalization patterns of phenomenologically relevant local operators, is also discussed. (orig.)

  11. A stacking-fault based microscopic model for platelets in diamond

    Science.gov (United States)

    Antonelli, Alex; Nunes, Ricardo

    2005-03-01

    We propose a new microscopic model for the 001 planar defects in diamond commonly called platelets. This model is based on the formation of a metastable stacking fault, which can occur because of the ability of carbon to stabilize in different bonding configurations. In our model the core of the planar defect is basically a double layer of three-fold coordinated sp^2 carbon atoms embedded in the common sp^3 diamond structure. The properties of the model were determined using ab initio total energy calculations. All significant experimental signatures attributed to the platelets, namely, the lattice displacement along the [001] direction, the asymmetry between the [110] and the [11 0] directions, the infrared absorption peak B^' , and broad luminescence lines that indicate the introduction of levels in the band gap, are naturally accounted for in our model. The model is also very appealing from the point of view of kinetics, since naturally occurring shearing processes will lead to the formation of the metastable fault.Authors acknowledge financial support from the Brazilian agencies FAPESP, CNPq, FAEP-UNICAMP, FAPEMIG, and Instituto do Milênio em Nanociências-MCT

  12. Emission channeling lattice location experiments with short-lived isotopes

    CERN Multimedia

    Wahl, U; Ronning, C R

    2007-01-01

    Emission channeling with position-sensitive detectors is a well-established technique at ISOLDE for studying the lattice location of radioactive impurities implanted into single crystals. In the case of electron emitting isotopes, however, due to count rate and noise-related limitations of the detection systems, the technique was restricted to isotopes with half lives above 6 h and electron energies above 40 keV. Recently, major technical developments have been realized and new equipment has been acquired which has allowed these limitations to be overcome and made feasible electron emission channeling experiments with short-lived isotopes and at low electron energies.\\\\ As first application, making use of two new on-line emission channeling setups at ISOLDE, we propose to investigate the lattice location of the transition metals Ni (2.5 h) and Co (1.6 h) in semiconductors, in particular in ZnO and GaN, by means of on-line $\\beta^{-}$-emission channeling experiments. In addition, we would like to study the lat...

  13. Lattice regularized chiral perturbation theory

    International Nuclear Information System (INIS)

    Borasoy, Bugra; Lewis, Randy; Ouimet, Pierre-Philippe A.

    2004-01-01

    Chiral perturbation theory can be defined and regularized on a spacetime lattice. A few motivations are discussed here, and an explicit lattice Lagrangian is reviewed. A particular aspect of the connection between lattice chiral perturbation theory and lattice QCD is explored through a study of the Wess-Zumino-Witten term

  14. A review of recent theoretical developments in the understanding of the migration of helium in metals and its interaction with lattice defects

    International Nuclear Information System (INIS)

    Reed, D.J.

    1977-01-01

    Recent theoretical calculations of the properties of rare gases, and in particular helium, in the common f.c.c. and b.c.c. metals, are reviewed from the viewpoint of the investigator concerned with the behaviour of rare gas in such radiation damage processes as surface blistering and void swelling. Particular attention is paid to mechanisms by which helium may migrate in a damaged metal lattice during irradiation and to the properties of small gas and vacancy clusters which may represent bubble or void nuclei. Initially the proposed rapid migration of interstitial helium is discussed together with the substitutional de-trapping mechanism, whereby thermally activated helium jumps from a substitutional to an interstitial position. This enables a mechanism of substitutional helium diffusion to be proposed which may proceed at temperatures below those of self-diffusion. The formation, binding, migration and dissociation energies of gas-vacancy clusters have been reviewed. The relevance of the predicted trend towards the optimum stability of clusters composed of equal numbers of gas atoms and vacancies is discussed. The limited data available concerned with the binding of a helium atom to a pure dislocation line is presented together with comments on the possible nature of the interaction of helium with the dislocation jog. (author)

  15. Stack Monitor Operating Experience Review

    International Nuclear Information System (INIS)

    Cadwallader, L.C.; Bruyere, S.A.

    2009-01-01

    Stack monitors are used to sense radioactive particulates and gases in effluent air being vented from rooms of nuclear facilities. These monitors record the levels and types of effluents to the environment. This paper presents the results of a stack monitor operating experience review of the U.S. Department of Energy (DOE) Occurrence Reporting and Processing System (ORPS) database records from the past 18 years. Regulations regarding these monitors are briefly described. Operating experiences reported by the U.S. DOE and in engineering literature sources were reviewed to determine the strengths and weaknesses of these monitors. Electrical faults, radiation instrumentation faults, and human errors are the three leading causes of failures. A representative 'all modes' failure rate is 1E-04/hr. Repair time estimates vary from an average repair time of 17.5 hours (with spare parts on hand) to 160 hours (without spare parts on hand). These data should support the use of stack monitors in any nuclear facility, including the National Ignition Facility and the international ITER project.

  16. Study and Development of an OpenStack solution

    OpenAIRE

    Jorba Brosa, Maria

    2014-01-01

    Estudi i desenvolupament d'una solució de virtualització amb Openstack. Es farà un especial èmfasi en la part de seguretat. Deployment of a solution based in OpenStack for the creation of an Infrastructure service cloud. Implementación de una solución basada en OpenStack para la creación de una infrastructura de servicios cloud. Implementació d'una solució basada en OpenStack per la creació d'una infrastructura de serveis cloud.

  17. Supersymmetric lattices

    International Nuclear Information System (INIS)

    Catterall, Simon

    2013-01-01

    Discretization of supersymmetric theories is an old problem in lattice field theory. It has resisted solution until quite recently when new ideas drawn from orbifold constructions and topological field theory have been brought to bear on the question. The result has been the creation of a new class of lattice gauge theory in which the lattice action is invariant under one or more supersymmetries. The resultant theories are local and free of doublers and in the case of Yang-Mills theories also possess exact gauge invariance. In principle they form the basis for a truly non-perturbative definition of the continuum supersymmetric field theory. In this talk these ideas are reviewed with particular emphasis being placed on N = 4 super Yang-Mills theory.

  18. Self-sorting of dynamic metallosupramolecular libraries (DMLs) via metal-driven selection.

    Science.gov (United States)

    Kocsis, Istvan; Dumitrescu, Dan; Legrand, Yves-Marie; van der Lee, Arie; Grosu, Ion; Barboiu, Mihail

    2014-03-11

    "Metal-driven" selection between finite mononuclear and polymeric metallosupramolecular species can be quantitatively achieved in solution and in a crystalline state via coupled coordination/stacking interactional algorithms within dynamic metallosupramolecular libraries - DMLs.

  19. Exploring online evolution of network stacks

    OpenAIRE

    Imai, Pierre

    2013-01-01

    Network stacks today follow a one-size-fits-all philosophy. They are mostly kept unmodified due to often prohibitive costs of engineering, deploying and administrating customisation of the networking software, with the Internet stack architecture still largely being based on designs and assumptions made for the ARPANET 40 years ago. We venture that heterogeneous and rapidly changing networks of the future require, in order to be successful, run-time self-adaptation mechanisms at different tim...

  20. Many-beam effects in electron microscope images of lattice defects

    International Nuclear Information System (INIS)

    Izui, Kazuhiko; Nishida, Takahiko; Furuno, Shigemi; Otsu, Hitoshi

    1974-01-01

    Multi-beam effects in electron microscopic images were investigated. A computation program was developed on the basis of a matrix theory of the multi-beam effects. The matrix theory for a perfect crystal and an imperfect crystal is described, and expression for absorption coefficient is presented. The amplitude of electron wave penetrating through lattice defects is expressed by using scattering matrices which correspond to crystal slices. Calculation of extinction distance was performed, and compared with experimental results. In case of systematic reflection, the difference between two beams and from four to eight beams approximation was small, while a large effect was seen in case of accidental reflection. The intensity profile of bend contour was calculated for silicon and copper-aluminum alloy. Distance between submaxima becomes short with increase of thickness. The change in stacking fault fringes with diffraction condition was investigated. Samples were copper-aluminum alloy. Systematic behavior of the fringes was obtained, and the calculated results reproduced experimental ones. (Kato, T.)

  1. Effect of Strain on the Reactivity of Metal Surfaces

    DEFF Research Database (Denmark)

    Mavrikakis, Manos; Hammer, Bjørk; Nørskov, Jens Kehlet

    1998-01-01

    Self-consistent density functional calculations for the adsorption of O and CO, and the dissociation of CO on strained and unstrained Ru(0001) surfaces are used to show how strained metal surfaces have chemical properties that are significantly different from those of unstrained surfaces. Surface...... reactivity increases with lattice expansion, following a concurrent up-shift of the metal d states. Consequences for the catalytic activity of thin metal overlayers are discussed....

  2. Tritium in metals: Techniques of preparation

    International Nuclear Information System (INIS)

    Laesser, R.; Klatt, K.H.; Mecking, P.; Wenzl, H.

    1982-08-01

    In order to study the behavior of tritium in metals, an all metal apparatus has been built for the safe handling of 100 mg of tritium. Samples of palladium, vanadium, niobium, and tantalum were loaded with tritium, deuterium or hydrogen. Some details of the phase diagrams could be established by DTA and by measurement of the lattice parameters. The diffusion of tritium in V, Nb, and Ta was studied with the Gorsky-effect. (TWO)

  3. Reactor lattice codes

    International Nuclear Information System (INIS)

    Kulikowska, T.

    1999-01-01

    The present lecture has a main goal to show how the transport lattice calculations are realised in a standard computer code. This is illustrated on the example of the WIMSD code, belonging to the most popular tools for reactor calculations. Most of the approaches discussed here can be easily modified to any other lattice code. The description of the code assumes the basic knowledge of reactor lattice, on the level given in the lecture on 'Reactor lattice transport calculations'. For more advanced explanation of the WIMSD code the reader is directed to the detailed descriptions of the code cited in References. The discussion of the methods and models included in the code is followed by the generally used homogenisation procedure and several numerical examples of discrepancies in calculated multiplication factors based on different sources of library data. (author)

  4. Radiation damage and life-time evaluation of RBMK graphite stack

    Energy Technology Data Exchange (ETDEWEB)

    Platonov, P A; Chugunov, O K; Manevsky, V N; Karpukhin, V I [Russian Research Centre Kurchatov Inst., Moscow (Russian Federation). Reactor Material Div.

    1996-08-01

    At the present time there are 11 NPP units with RBMK reactors in operation in Russia, with the oldest now in operation 22 years. Design life-time of the RBMK-1000 reactor is 30 years. This paper addresses the evaluation of RBMK graphite stack life-time. It is the practice in Russia to evaluate the reliability of the channel reactor graphite stack using at least three criteria: degradation of physical-mechanical properties of graphite, preservation of the graphite brick integrity, and degradation of the graphite stack as a structure. Stack life-time evaluation by different criteria indicates that the most realistic approach may be realized on the basis of the criteria of brick cracking and degradation of the graphite stack as a structure. The RBMK reactor graphite stack life-time depends on its temperature and for different units it may be different. (author). 2 refs, 10 figs.

  5. Vector Fields and Flows on Differentiable Stacks

    DEFF Research Database (Denmark)

    A. Hepworth, Richard

    2009-01-01

    This paper introduces the notions of vector field and flow on a general differentiable stack. Our main theorem states that the flow of a vector field on a compact proper differentiable stack exists and is unique up to a uniquely determined 2-cell. This extends the usual result on the existence...... of vector fields....

  6. A high-performance aluminum-feed microfluidic fuel cell stack

    Science.gov (United States)

    Wang, Yifei; Leung, Dennis Y. C.

    2016-12-01

    In this paper, a six-cell microfluidic fuel cell (MFC) stack is demonstrated. Low-cost aluminum is fed directly to the stack, which produces hydrogen fuel on site, through the Al-H2O reaction. This design is not only cost-efficient, but also eliminates the need for hydrogen storage. Unlike the conventional MFC stacks which generally require complex electrolyte distribution and management, the present Al-feed MFC stack requires only a single electrolyte stream, flowing successively through individual cells, which is finally utilized for hydrogen generation. In this manner, the whole system is greatly simplified while the operational robustness is also improved. With 2 M sodium hydroxide solution as electrolyte and kitchen foil Al as fuel, the present six-cell stack (in series) exhibits an open circuit voltage of nearly 6 V and a peak power density of 180.6 mWcm-2 at room temperature. In addition, an energy density of 1 Whg-1(Al) is achieved, which is quite high and comparable with its proton exchange membrane-based counterparts. Finally, pumpless operation of the present stack, together with its practical applications are successfully demonstrated, including lightening LED lights, driving an electric fan, and cell phone charging.

  7. Dynamic stack testing and HiL simulation

    Energy Technology Data Exchange (ETDEWEB)

    Randolf, G. [GRandalytics, Honolulu, HI (United States)

    2009-07-01

    The applications for fuel cell and stack deployment have changed rapidly over the years, from stationary backup supplies to highly dynamic automotive power systems. As a result, testing must keep up in order to ensure mature products of high quality. A new breed of stack test stations has been designed, based on a newly developed single cell, high dynamic hardware-in-the-loop (HiL) simulator in order to meet the growing demand of realistic fuel cell testing scenarios for aviation and automotive industries. The paper described and illustrated the test station architecture and outline of communication nodes. The paper also described the voltage monitor and presented schematics of voltage monitoring modules. The basic requirements of the architecture that were presented included low latency; flexible communication with simulation targets and other data input/output nodes; scalability to various stack sizes; and, safety and reliability. It was concluded that first tests with the voltage monitoring system not only confirmed the design, high throughput and signal quality, but also suggested another application, namely a stack impedance spectrometer for each individual cell. 1 ref., 3 figs.

  8. Development of an Integrated Polymer Microfluidic Stack

    International Nuclear Information System (INIS)

    Datta, Proyag; Hammacher, Jens; Pease, Mark; Gurung, Sitanshu; Goettert, Jost

    2006-01-01

    Microfluidic is a field of considerable interest. While significant research has been carried out to develop microfluidic components, very little has been done to integrate the components into a complete working system. We present a flexible modular system platform that addresses the requirements of a complete microfluidic system. A microfluidic stack system is demonstrated with the layers of the stack being modular for specific functions. The stack and accompanying infrastructure provides an attractive platform for users to transition their design concepts into a working microfluidic system quickly with very little effort. The concept is demonstrated by using the system to carry out a chemilumiscence experiment. Details regarding the fabrication, assembly and experimental methods are presented

  9. Optimization of hole generation in Ti/CFRP stacks

    Science.gov (United States)

    Ivanov, Y. N.; Pashkov, A. E.; Chashhin, N. S.

    2018-03-01

    The article aims to describe methods for improving the surface quality and hole accuracy in Ti/CFRP stacks by optimizing cutting methods and drill geometry. The research is based on the fundamentals of machine building, theory of probability, mathematical statistics, and experiment planning and manufacturing process optimization theories. Statistical processing of experiment data was carried out by means of Statistica 6 and Microsoft Excel 2010. Surface geometry in Ti stacks was analyzed using a Taylor Hobson Form Talysurf i200 Series Profilometer, and in CFRP stacks - using a Bruker ContourGT-Kl Optical Microscope. Hole shapes and sizes were analyzed using a Carl Zeiss CONTURA G2 Measuring machine, temperatures in cutting zones were recorded with a FLIR SC7000 Series Infrared Camera. Models of multivariate analysis of variance were developed. They show effects of drilling modes on surface quality and accuracy of holes in Ti/CFRP stacks. The task of multicriteria drilling process optimization was solved. Optimal cutting technologies which improve performance were developed. Methods for assessing thermal tool and material expansion effects on the accuracy of holes in Ti/CFRP/Ti stacks were developed.

  10. Long-Lived Correlated Triplet Pairs in a π-Stacked Crystalline Pentacene Derivative.

    Science.gov (United States)

    Folie, Brendan D; Haber, Jonah B; Refaely-Abramson, Sivan; Neaton, Jeffrey B; Ginsberg, Naomi S

    2018-02-14

    Singlet fission is the spin-conserving process by which a singlet exciton splits into two triplet excitons. Singlet fission occurs via a correlated triplet pair intermediate, but direct evidence of this state has been scant, and in films of TIPS-pentacene, a small molecule organic semiconductor, even the rate of fission has been unclear. We use polarization-resolved transient absorption microscopy on individual crystalline domains of TIPS-pentacene to establish the fission rate and demonstrate that the initially created triplets remain bound for a surprisingly long time, hundreds of picoseconds, before separating. Furthermore, using a broadband probe, we show that it is possible to determine absorbance spectra of individual excited species in a crystalline solid. We find that triplet interactions perturb the absorbance, and provide evidence that triplet interaction and binding could be caused by the π-stacked geometry. Elucidating the relationship between the lattice structure and the electronic structure and dynamics has important implications for the creation of photovoltaic devices that aim to boost efficiency via singlet fission.

  11. Toward lattice fractional vector calculus

    International Nuclear Information System (INIS)

    Tarasov, Vasily E

    2014-01-01

    An analog of fractional vector calculus for physical lattice models is suggested. We use an approach based on the models of three-dimensional lattices with long-range inter-particle interactions. The lattice analogs of fractional partial derivatives are represented by kernels of lattice long-range interactions, where the Fourier series transformations of these kernels have a power-law form with respect to wave vector components. In the continuum limit, these lattice partial derivatives give derivatives of non-integer order with respect to coordinates. In the three-dimensional description of the non-local continuum, the fractional differential operators have the form of fractional partial derivatives of the Riesz type. As examples of the applications of the suggested lattice fractional vector calculus, we give lattice models with long-range interactions for the fractional Maxwell equations of non-local continuous media and for the fractional generalization of the Mindlin and Aifantis continuum models of gradient elasticity. (papers)

  12. Toward lattice fractional vector calculus

    Science.gov (United States)

    Tarasov, Vasily E.

    2014-09-01

    An analog of fractional vector calculus for physical lattice models is suggested. We use an approach based on the models of three-dimensional lattices with long-range inter-particle interactions. The lattice analogs of fractional partial derivatives are represented by kernels of lattice long-range interactions, where the Fourier series transformations of these kernels have a power-law form with respect to wave vector components. In the continuum limit, these lattice partial derivatives give derivatives of non-integer order with respect to coordinates. In the three-dimensional description of the non-local continuum, the fractional differential operators have the form of fractional partial derivatives of the Riesz type. As examples of the applications of the suggested lattice fractional vector calculus, we give lattice models with long-range interactions for the fractional Maxwell equations of non-local continuous media and for the fractional generalization of the Mindlin and Aifantis continuum models of gradient elasticity.

  13. Solubility and diffusion of hydrogen in pure metals and alloys

    International Nuclear Information System (INIS)

    Wipf, H.

    2001-01-01

    Basic facts are presented of the absorption of hydrogen gas by metals and the diffusion of hydrogen in metals. Specifically considered are crystalline metals without defects and lattice disorder (pure metals), low hydrogen concentrations and the possibility of high hydrogen gas pressures. The first introductory topic is a short presentation of typical phase diagrams of metal hydrogen systems. Then, hydrogen absorption is discussed and shown to be decisively determined by the enthalpy of solution, in particular by its sign which specifies whether absorption is exothermic or endothermic. The formation of high-pressure hydrogen gas bubbles in a metal, which can lead to blistering, is addressed. It is demonstrated that bubble formation will, under realistic conditions, only occur in strongly endothermically hydrogen absorbing metals. The chief aspects of hydrogen diffusion in metals are discussed, especially the large size of the diffusion coefficient and its dependence on lattice structure. It is shown that forces can act on hydrogen in metals, causing a directed hydrogen flux. Such forces arise, for instance, in the presence of stress and temperature gradients and can result in local hydrogen accumulation with potential material failure effects. The final aspect discussed is hydrogen permeation, where the absorption behavior of the hydrogen is found to be in general more decisive on the permeation rate than the value of the diffusion coefficient. (orig.)

  14. Lattice gas cellular automata and lattice Boltzmann models an introduction

    CERN Document Server

    Wolf-Gladrow, Dieter A

    2000-01-01

    Lattice-gas cellular automata (LGCA) and lattice Boltzmann models (LBM) are relatively new and promising methods for the numerical solution of nonlinear partial differential equations. The book provides an introduction for graduate students and researchers. Working knowledge of calculus is required and experience in PDEs and fluid dynamics is recommended. Some peculiarities of cellular automata are outlined in Chapter 2. The properties of various LGCA and special coding techniques are discussed in Chapter 3. Concepts from statistical mechanics (Chapter 4) provide the necessary theoretical background for LGCA and LBM. The properties of lattice Boltzmann models and a method for their construction are presented in Chapter 5.

  15. Project W-420 stack monitoring system upgrades

    International Nuclear Information System (INIS)

    CARPENTER, K.E.

    1999-01-01

    This project will execute the design, procurement, construction, startup, and turnover activities for upgrades to the stack monitoring system on selected Tank Waste Remediation System (TWRS) ventilation systems. In this plan, the technical, schedule, and cost baselines are identified, and the roles and responsibilities of project participants are defined for managing the Stack Monitoring System Upgrades, Project W-420

  16. Fabrication of high gradient insulators by stack compression

    Science.gov (United States)

    Harris, John Richardson; Sanders, Dave; Hawkins, Steven Anthony; Norona, Marcelo

    2014-04-29

    Individual layers of a high gradient insulator (HGI) are first pre-cut to their final dimensions. The pre-cut layers are then stacked to form an assembly that is subsequently pressed into an HGI unit with the desired dimension. The individual layers are stacked, and alignment is maintained, using a sacrificial alignment tube that is removed after the stack is hot pressed. The HGI's are used as high voltage vacuum insulators in energy storage and transmission structures or devices, e.g. in particle accelerators and pulsed power systems.

  17. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

    Directory of Open Access Journals (Sweden)

    Z N Khan

    Full Text Available Metal Oxide Semiconductor (MOS capacitors (MOSCAP have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer, time-temperature cycle and sequence are key parameters influencing the device's output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application.

  18. Density functional study of isoguanine tetrad and pentad sandwich complexes with alkali metal ions.

    Science.gov (United States)

    Meyer, Michael; Steinke, Thomas; Sühnel, Jürgen

    2007-02-01

    Isoguanine tetraplexes and pentaplexes contain two or more stacked polyads with intercalating metal ions. We report here the results of a density functional study of sandwiched isoguanine tetrad and pentad complexes consisting of two polyads with Na(+), K(+) and Rb(+) ions at the B3LYP level. In comparison to single polyad metal ion complexes, there is a trend towards increased non-planarity of the polyads in the sandwich complexes. In general, the pentad sandwiches have relatively planar polyad structures, whereas the tetrad complexes contain highly non-planar polyad building blocks. As in other sandwich complexes and in metal ion complexes with single polyads, the metal ion-base interaction energy plays an essential role. In iG sandwich structures, this interaction energy is slightly larger than in the corresponding guanine sandwich complexes. Because the base-base interaction energy is even more increased in passing from guanine to isoguanine, the isoguanine sandwiches are thus far the only examples where the base-base interaction energy is larger than the base-metal ion interaction energy. Stacking interactions have been studied in smaller models consisting of two bases, retaining the geometry from the complete complex structures. From the data obtained at the B3LYP and BH&H levels and with Møller-Plesset perturbation theory, one can conclude that the B3LYP method overestimates the repulsion in stacked base dimers. For the complexes studied in this work, this is only of minor importance because the direct inter-tetrad or inter-pentad interaction is supplemented by a strong metal ion-base interaction. Using a microsolvation model, the metal ion preference K(+) approximately Rb(+) > Na(+) is found for tetrad complexes. On the other hand, for pentads the ordering is Rb(+) > K(+) > Na(+). In the latter case experimental data are available that agree with this prediction.

  19. Emission channeling with short-lived isotopes lattice location of impurities in semiconductors and oxides

    CERN Multimedia

    We propose to perform emission channeling lattice location experiments in a number of semiconductor and oxide systems of technological relevance: \\\\- The lattice location of the transition metal probes $^{56}$Mn ($\\textit{t}_{1/2}$=2.6 h), $^{59}$Fe (45 d), $^{61}$Co (1.6 h) and $^{65}$Ni (2.5 h) is to be investigated in materials of interest as dilute magnetic semiconductors, such as GaMnAs, GaMnN, GaFeN, AlGaN, SiC, and in a number of oxides that are candidates for “single ion ferromagnetism”, in particular SrTiO$_3$ and LiNbO$_3$.\\\\- The topic of $\\textit{p}$-type doping of nitride semiconductors shall be addressed by studying the lattice sites of the acceptor dopants Mg and Be in GaN and AlN using the short-lived probes $^{27}$Mg (9.5 min) and $^{11}$Be (13.8 s). The aim is to reach a lattice location precision around 0.05 Å in order to provide critical tests for recent theoretical models which e.g. have predicted displacements of the Mg atom from the ideal substitutional Ga and Al sites of the order...

  20. WIPP/SRL in-situ tests: MIIT program--The effects of metal package components

    International Nuclear Information System (INIS)

    Covington, J.A.; Wicks, G.G.; Molecke, M.A.

    1991-01-01

    The Materials Interface Interactions Tests or MIIT is the largest in-situ testing program in progress, involving burial of many simulated nuclear waste systems and accompanying package components. In MIIT, waste glass samples were fabricated into the shape of 'pineapple slices', polished on one side. Proposed package components were also made into a similar configuration and the various glasses, metals, and geologic samples were than stacked onto heater elements within Teflon assemblies. This produced interactions of interest by creating glass/glass, glass/salt, and glass/metal interfaces. Since the outer diameter of the metal was smaller than the outer diameter of the glass, a lip was created which was also produced a glass/liquid interface, which was also studied. Overall, a total of 50 stacks or assemblies of pineapple slices were created in seven different stacking arrangements. Each individual assembly was then installed in an instrumented borehole at WIPP. Brine was then added to most of boreholes and the assemblies heated and maintained at 90 degrees C. This was achieved by energizing the central heating and rod that traversed through the middle opening of each of the pineapple slices in each assembly. Due to the design of these units, glass, metal and geologic samples could be removed at time intervals of 6 mos., 1 year, 2 years, and 5 years. Currently, all but the 5 year samples have been removed from test and are being evaluated in laboratories of MIIT participants

  1. Lattice degeneracies of geometric fermions

    International Nuclear Information System (INIS)

    Raszillier, H.

    1983-05-01

    We give the minimal numbers of degrees of freedom carried by geometric fermions on all lattices of maximal symmetries in d = 2, 3, and 4 dimensions. These numbers are lattice dependent, but in the (free) continuum limit, part of the degrees of freedom have to escape to infinity by a Wilson mechanism built in, and 2sup(d) survive for any lattice. On self-reciprocal lattices we compare the minimal numbers of degrees of freedom of geometric fermions with the minimal numbers of naive fermions on these lattices and argue that these numbers are equal. (orig.)

  2. Lattice gauge theory using parallel processors

    International Nuclear Information System (INIS)

    Lee, T.D.; Chou, K.C.; Zichichi, A.

    1987-01-01

    The book's contents include: Lattice Gauge Theory Lectures: Introduction and Current Fermion Simulations; Monte Carlo Algorithms for Lattice Gauge Theory; Specialized Computers for Lattice Gauge Theory; Lattice Gauge Theory at Finite Temperature: A Monte Carlo Study; Computational Method - An Elementary Introduction to the Langevin Equation, Present Status of Numerical Quantum Chromodynamics; Random Lattice Field Theory; The GF11 Processor and Compiler; and The APE Computer and First Physics Results; Columbia Supercomputer Project: Parallel Supercomputer for Lattice QCD; Statistical and Systematic Errors in Numerical Simulations; Monte Carlo Simulation for LGT and Programming Techniques on the Columbia Supercomputer; Food for Thought: Five Lectures on Lattice Gauge Theory

  3. Validation of a HT-PEMFC stack for CHP applications

    Energy Technology Data Exchange (ETDEWEB)

    Pasupathi, S.; Ulleberg, Oe. [Western Cape Univ. (South Africa). HySA Systems, SAIAMC; Bujlo, P. [Western Cape Univ. (South Africa). HySA Systems, SAIAMC; Electrotechnical Institute Wroclaw Division (Poland); Scholta, J. [Centre for Solar Energy and Hydrogen Research (ZSW) (Germany)

    2010-07-01

    Fuel cell systems are very attractive for stationary co-generation applications as they can produce heat and electricity efficiently in a decentralized and environmentally friendly manner. PEMFC stacks operating at temperatures above 120 C, specifically in the range of 140-180 C, are ideal for co-generation purposes. In this study, preliminary results from a HTPEMFC stack designed for CHP applications is presented and discussed. A short, five-cell, HT-PEMFC stack was assembled with Celtec- P-2100 MEAs and validated in terms of electrical performance. The stack was operated with hydrogen and air at 160 C and the utilization curves for anode and cathode were recorded for a wide range of gas utilization at a current density of 0.52 A/cm{sup 2}. The current voltage characteristic was measured at optimal utilization values at 160 C. A 1kW stack is assembled and is currently being validated for its performance under various operating conditions for use in CHP applications. (orig.)

  4. Moessbauer spectroscopy of isotope separator implanted sup(119m)Sn in FCC metals

    International Nuclear Information System (INIS)

    Larsen, A.N.; Weyer, G.

    1979-01-01

    Radioactive sup(119m)Sn has been implanted in FCC metals by means of an isotope separator. Moessbauer spectra have been measured for the 24 keV transition of 119 Sn. Large substitutional fractions are found in all cases. A correlation for substitutional lattice sites between the measured isomer shifts of the impurity atoms and the force constants of the host lattices is discussed. Debye-Waller factors determined for substitutional Sn in the host lattices are found to be smaller than values calculated by a simple mass-defect model. For some host metals indications of an influence of radiation damage on the spectra are observed. Defect sites are assigned to Sn in aluminium and lead. Qualitative conclusions on the structures of these defects are drawn from the determined Moessbauer parameters. (author)

  5. Development of the electric utility dispersed use PAFC stack

    Energy Technology Data Exchange (ETDEWEB)

    Horiuchi, Hiroshi; Kotani, Ikuo [Mitsubishi Electric Co., Kobe (Japan); Morotomi, Isamu [Kansai Electric Power Co., Hyogo (Japan)] [and others

    1996-12-31

    Kansai Electric Power Co. and Mitsubishi Electric Co. have been developing the electric utility dispersed use PAFC stack operated under the ambient pressure. The new cell design have been developed, so that the large scale cell (1 m{sup 2} size) was adopted for the stack. To confirm the performance and the stability of the 1 m{sup 2} scale cell design, the short stack study had been performed.

  6. Lattice degeneracies of fermions

    International Nuclear Information System (INIS)

    Raszillier, H.

    1983-10-01

    We present a detailed description of the minimal degeneracies of geometric (Kaehler) fermions on all the lattices of maximal symmetries in n = 1, ..., 4 dimensions. We also determine the isolated orbits of the maximal symmetry groups, which are related to the minimal numbers of ''naive'' fermions on the reciprocals of these lattices. It turns out that on the self-reciprocal lattices the minimal numbers of naive fermions are equal to the minimal numbers of degrees of freedom of geometric fermions. The description we give relies on the close connection of the maximal lattice symmetry groups with (affine) Weyl groups of root systems of (semi-) simple Lie algebras. (orig.)

  7. Sport stacking activities in school children's motor skill development.

    Science.gov (United States)

    Li, Yuhua; Coleman, Diane; Ransdell, Mary; Coleman, Lyndsie; Irwin, Carol

    2011-10-01

    This study examined the impact of a 12-wk. sport stacking intervention on reaction time (RT), manual dexterity, and hand-eye coordination in elementary school-aged children. 80 Grade 2 students participated in a 15-min. sport stacking practice session every school day for 12 wk., and were tested on psychomotor performance improvement. Tests for choice RT, manual dexterity, and photoelectric rotary pursuit tracking were conducted pre- and post-intervention for both experimental group (n = 36) and the controls (n = 44) who did no sport stacking. Students who had the intervention showed a greater improvement in two-choice RT. No other group difference was found. Such sport stacking activities may facilitate children's central processing and perceptual-motor integration.

  8. Local Conduction in MoxW1–xSe2: The Role of Stacking Faults, Defects, and Alloying

    Science.gov (United States)

    2018-01-01

    Here, we report on the surface conductivity of WSe2 and MoxW1–xSe2 (0 ≤ x ≤ 1) crystals investigated with conductive atomic force microscopy. We found that stacking faults, defects, and chemical heterogeneities form distinct two-dimensional and one-dimensional conduction paths on the transition metal dichalcogenide surface. In the case of WSe2, in addition to step edges, we find a significant amount of stacking faults (formed during the cleaving process) that strongly influence the surface conductivity. These regions are attributed to the alternation of the 2H and 3R polytypism. The stacking faults form regular 2D patterns by alternation of the underlying stacking order, with a periodicity that varies significantly between different regions and samples. In the case of MoxW1–xSe2, its conductivity has a localized nature, which depends on the underlying chemical composition and the Mo/W ratio. Segregation to W-rich and Mo-rich regions during the growth process leads to nonuniform conduction paths on the surface of the alloy. We found a gradual change of the conductivity moving from one region to the other, reminiscent of lateral band bending. Our results demonstrate the use of C-AFM as a nanoscopic tool to probe the electrical properties of largely inhomogeneous samples and show the complicated nature of the surface conductivity of TMDC alloys. PMID:29578328

  9. Simultaneous stack-gas scrubbing and waste water treatment

    Science.gov (United States)

    Poradek, J. C.; Collins, D. D.

    1980-01-01

    Simultaneous treatment of wastewater and S02-laden stack gas make both treatments more efficient and economical. According to results of preliminary tests, solution generated by stack gas scrubbing cycle reduces bacterial content of wastewater. Both processess benefit by sharing concentrations of iron.

  10. Formation of stacking faults and misfit dislocations during Zn diffusion-enhanced intermixing of a GaInAsP/InP heterostructure

    International Nuclear Information System (INIS)

    Park, H.H.; Nam, E.S.; Lee, Y.T.; Lee, E.H.; Lee, J.Y.; Kwon, O.

    1991-01-01

    In this paper the microstructural degradation of a lattice-matched Ga 0.28 In 0.72 As 0.61 P 0.39 /InP heterointerface during atomic intermixing induced by Zn diffusion are investigated using high-resolution transmission electron microscopy and Auger electron spectroscopy. The localized interfacial stress caused by intermixing appears to create stacking faults in the Ga-mixed Inp substrate, and dislocation tangles in the In-mixed GaInAsP layer. The results are attributed to the contrasted effect of tensile and compressive stresses upon the nucleation of partial dislocations from both sides of the intermixed interface. A qualitative model is proposed for the homogeneous nucleation of misfit dislocations from the locally stressed interface

  11. Detailed Electrochemical Characterisation of Large SOFC Stacks

    DEFF Research Database (Denmark)

    Mosbæk, Rasmus Rode; Hjelm, Johan; Barfod, R.

    2012-01-01

    application of advanced methods for detailed electrochemical characterisation during operation. An operating stack is subject to steep compositional gradients in the gaseous reactant streams, and significant temperature gradients across each cell and across the stack, which makes it a complex system...... Fuel Cell A/S was characterised in detail using electrochemical impedance spectroscopy. An investigation of the optimal geometrical placement of the current probes and voltage probes was carried out in order to minimise measurement errors caused by stray impedances. Unwanted stray impedances...... are particularly problematic at high frequencies. Stray impedances may be caused by mutual inductance and stray capacitance in the geometrical set-up and do not describe the fuel cell. Three different stack geometries were investigated by electrochemical impedance spectroscopy. Impedance measurements were carried...

  12. The Stack-Size of Combinatorial Tries Revisited

    Directory of Open Access Journals (Sweden)

    Markus E. Nebel

    2002-12-01

    Full Text Available In the present paper we consider a generalized class of extended binary trees in which leaves are distinguished in order to represent the location of a key within a trie of the same structure. We prove an exact asymptotic equivalent to the average stack-size of trees with α internal nodes and β leaves corresponding to keys; we assume that all trees with the same parameters α and β have the same probability. The assumption of that uniform model is motivated for example by the usage of tries for the compression of blockcodes. Furthermore, we will prove asymptotics for the r-th moments of the stack-size and we will show that a normalized stack-size possesses a theta distribution in the limit.

  13. A new crystal lattice structure of Helicobacter pylori neutrophil-activating protein (HP-NAP)

    International Nuclear Information System (INIS)

    Tsuruta, Osamu; Yokoyama, Hideshi; Fujii, Satoshi

    2012-01-01

    A new crystal lattice structure of H. pylori neutrophil-activating protein has been determined. Iron loading causes a series of conformational changes at the ferroxidase centre. A new crystal lattice structure of Helicobacter pylori neutrophil-activating protein (HP-NAP) has been determined in two forms: the native state (Apo) at 2.20 Å resolution and an iron-loaded form (Fe-load) at 2.50 Å resolution. The highly solvated packing of the dodecameric shell is suitable for crystallographic study of the metal ion-uptake pathway. Like other bacterioferritins, HP-NAP forms a spherical dodecamer with 23 symmetry including two kinds of channels. Iron loading causes a series of conformational changes of amino-acid residues (Trp26, Asp52 and Glu56) at the ferroxidase centre

  14. Crystallite size effects in stacking faulted nickel hydroxide and its electrochemical behaviour

    International Nuclear Information System (INIS)

    Ramesh, T.N.

    2009-01-01

    β-Nickel hydroxide comprises a long range periodic arrangement of atoms with a stacking sequence of AC AC AC-having an ideal composition Ni(OH) 2 . Variation in the preparative conditions can lead to the changes in the stacking sequence (AC AC BA CB AC AC or AC AC AB AC AC). This type of variation in stacking sequence can result in the formation of stacking fault in nickel hydroxide. The stability of the stacking fault depends on the free energy content of the sample. Stacking faults in nickel hydroxide is essential for better electrochemical activity. Also there are reports correlating particle size to the better electrochemical activity. Here we present the effect of crystallite size on the stacking faulted nickel hydroxide samples. The electrochemical performance of stacking faulted nickel hydroxide with small crystallite size exchanges 0.8e/Ni, while the samples with larger crystallite size exchange 0.4e/Ni. Hence a right combination of crystallite size and stacking fault content has to be controlled for good electrochemical activity of nickel hydroxide

  15. Geometry of lattice field theory

    International Nuclear Information System (INIS)

    Honan, T.J.

    1986-01-01

    Using some tools of algebraic topology, a general formalism for lattice field theory is presented. The lattice is taken to be a simplicial complex that is also a manifold and is referred to as a simplicial manifold. The fields on this lattice are cochains, that are called lattice forms to emphasize the connections with differential forms in the continuum. This connection provides a new bridge between lattice and continuum field theory. A metric can be put onto this simplicial manifold by assigning lengths to every link or I-simplex of the lattice. Regge calculus is a way of defining general relativity on this lattice. A geometric discussion of Regge calculus is presented. The Regge action, which is a discrete form of the Hilbert action, is derived from the Hilbert action using distribution valued forms. This is a new derivation that emphasizes the underlying geometry. Kramers-Wannier duality in statistical mechanics is discussed in this general setting. Nonlinear field theories, which include gauge theories and nonlinear sigma models are discussed in the continuum and then are put onto a lattice. The main new result here is the generalization to curved spacetime, which consists of making the theory compatible with Regge calculus

  16. Representation theory of lattice current algebras

    International Nuclear Information System (INIS)

    Alekseev, A.Yu.; Eidgenoessische Technische Hochschule, Zurich; Faddeev, L.D.; Froehlich, L.D.; Schomerus, V.; Kyoto Univ.

    1996-04-01

    Lattice current algebras were introduced as a regularization of the left-and right moving degrees of freedom in the WZNW model. They provide examples of lattice theories with a local quantum symmetry U q (G). Their representation theory is studied in detail. In particular, we construct all irreducible representations along with a lattice analogue of the fusion product for representations of the lattice current algebra. It is shown that for an arbitrary number of lattice sites, the representation categories of the lattice current algebras agree with their continuum counterparts. (orig.)

  17. ISABELLE lattice

    International Nuclear Information System (INIS)

    Smith, L.

    1975-01-01

    An analysis is given of a number of variants of the basic lattice of the planned ISABELLE storage rings. The variants were formed by removing cells from the normal part of the lattice and juggling the lengths of magnets, cells, and insertions in order to maintain a rational relation of circumference to that of the AGS and approximately the same dispersion. Special insertions, correction windings, and the working line with nonlinear resonances are discussed

  18. Electrochemical Detection in Stacked Paper Networks.

    Science.gov (United States)

    Liu, Xiyuan; Lillehoj, Peter B

    2015-08-01

    Paper-based electrochemical biosensors are a promising technology that enables rapid, quantitative measurements on an inexpensive platform. However, the control of liquids in paper networks is generally limited to a single sample delivery step. Here, we propose a simple method to automate the loading and delivery of liquid samples to sensing electrodes on paper networks by stacking multiple layers of paper. Using these stacked paper devices (SPDs), we demonstrate a unique strategy to fully immerse planar electrodes by aqueous liquids via capillary flow. Amperometric measurements of xanthine oxidase revealed that electrochemical sensors on four-layer SPDs generated detection signals up to 75% higher compared with those on single-layer paper devices. Furthermore, measurements could be performed with minimal user involvement and completed within 30 min. Due to its simplicity, enhanced automation, and capability for quantitative measurements, stacked paper electrochemical biosensors can be useful tools for point-of-care testing in resource-limited settings. © 2015 Society for Laboratory Automation and Screening.

  19. Solid Oxide Cell and Stack Testing, Safety and Quality Assurance (SOCTESQA)

    DEFF Research Database (Denmark)

    Auer, C.; Lang, M.; Couturier, K.

    2015-01-01

    In the EU-funded project “SOCTESQA” partners from Europe and Singapore are working together to develop uniform and industry wide test procedures and protocols for solid oxide cells and stacks SOC cell/stack assembly. New application fields which are based on the operation of the SOC cell/stack as......In the EU-funded project “SOCTESQA” partners from Europe and Singapore are working together to develop uniform and industry wide test procedures and protocols for solid oxide cells and stacks SOC cell/stack assembly. New application fields which are based on the operation of the SOC cell...

  20. Static analysis of worst-case stack cache behavior

    DEFF Research Database (Denmark)

    Jordan, Alexander; Brandner, Florian; Schoeberl, Martin

    2013-01-01

    Utilizing a stack cache in a real-time system can aid predictability by avoiding interference that heap memory traffic causes on the data cache. While loads and stores are guaranteed cache hits, explicit operations are responsible for managing the stack cache. The behavior of these operations can......-graph, the worst-case bounds can be efficiently yet precisely determined. Our evaluation using the MiBench benchmark suite shows that only 37% and 21% of potential stack cache operations actually store to and load from memory, respectively. Analysis times are modest, on average running between 0.46s and 1.30s per...

  1. Optimized stacked RADFETs for milli-rad dose measurement

    International Nuclear Information System (INIS)

    O'Connell, B.; Lane, B.; Mohammadzadeh, A.

    1999-01-01

    This paper details the improvements in the design of stacked RADFETs for increased radiation sensitivity. The issues of high read-out voltage has been shown to be a draw-back. It is the body (bulk)effect factor that is responsible for the increased overall stack Threshold voltage (V T ), which is greater than the sum of the individual devices V T . From extensive process and device simulation and resultant circuit simulation, modified stack structures have been proposed and designed. New and exciting result of lower initial (pre-irradiation) output voltage as well as increased radiation sensitivity will be presented. (author)

  2. Charge transfer in pi-stacked systems including DNA

    International Nuclear Information System (INIS)

    Siebbeles, L.D.A.

    2003-01-01

    Charge migration in DNA is a subject of intense current study motivated by long-range detection of DNA damage and the potential application of DNA as a molecular wire in nanoscale electronic devices. A key structural element, which makes DNA a medium for long-range charge transfer, is the array of stacked base pairs in the interior of the double helix. The overlapping pi-orbitals of the nucleobases provide a pathway for motion of charge carriers generated on the stack. This 'pi-pathway' resembles the columnarly stacked macrocyclic cores in discotic materials such as triphenylenes. The structure of these pi-stacked systems is highly disordered with dynamic fluctuations occurring on picosecond to nanosecond time scales. Theoretical calculations, concerning the effects of structural disorder and nucleobase sequence in DNA, on the dynamics of charge carriers are presented. Electronic couplings and localization energies of charge carriers were calculated using density functional theory (DFT). Results for columnarly stacked triphenylenes and DNA nucleobases are compared. The results are used to provide insight into the factors that control the mobility of charge carriers. Further, experimental results on the site-selective oxidation of guanine nucleobases in DNA (hot spots for DNA damage) are analyzed on basis of the theoretical results

  3. Optoelectronic interconnects for 3D wafer stacks

    Science.gov (United States)

    Ludwig, David; Carson, John C.; Lome, Louis S.

    1996-01-01

    Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.

  4. Lattice dynamics and electron/phonon interactions in epitaxial transition-metal nitrides

    Science.gov (United States)

    Mei, Antonio Rodolph Bighetti

    Transition metal (TM) nitrides, due to their unique combination of remarkable physical properties and simple NaCl structure, are presently utilized in a broad range of applications and as model systems in the investigation of complex phenomena. Group-IVB nitrides TiN, ZrN, and HfN have transport properties which include superconductivity and high electrical conductivity; consequentially, they have become technologically important as electrodes and contacts in the semiconducting and superconducting industries. The Group-VB nitride VN, which exhibits enhanced ductility, is a fundamental component in superhard and tough nanostructured hard coatings. In this thesis, I investigate the lattice dynamics responsible for controlling superconductivity and electrical conductivities in Group-IVB nitrides and elasticity and structural stability of the NaCl-structure Group-VB nitride VN. Our group has already synthesized high-quality epitaxial TiN, HfN, and CeN layers on MgO(001) substrates. By irradiating the growth surface with high ion fluxes at energies below the bulk lattice-atom displacement threshold, dense epitaxial single crystal TM nitride films with extremely smooth surfaces have been grown using ultra-high vacuum magnetically-unbalanced magnetron sputter deposition. Using this approach, I completed the Group-IVB nitride series by growing epitaxial ZrN/MgO(001) films and then grew Group-VB nitride VN films epitaxially on MgO(001), MgO(011), and MgO(111). The combination of high-resolution x-ray diffraction (XRD) reciprocal lattice maps (RLMs), high-resolution cross-sectional transmission electron microscopy (HR-XTEM), and selected-area electron diffraction (SAED) show that single-crystal stoichiometric ZrN films grown at 450 °C are epitaxially oriented cube-on-cube with respect to their MgO(001) substrates, (001) ZrN||(001)MgO and [100]ZrN||[100]MgO. The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm. X-ray reflectivity results reveal that

  5. Dislocation creation and void nucleation in FCC ductile metals under tensile loading: a general microscopic picture.

    Science.gov (United States)

    Pang, Wei-Wei; Zhang, Ping; Zhang, Guang-Cai; Xu, Ai-Guo; Zhao, Xian-Geng

    2014-11-10

    Numerous theoretical and experimental efforts have been paid to describe and understand the dislocation and void nucleation processes that are fundamental for dynamic fracture modeling of strained metals. To date an essential physical picture on the self-organized atomic collective motions during dislocation creation, as well as the essential mechanisms for the void nucleation obscured by the extreme diversity in structural configurations around the void nucleation core, is still severely lacking in literature. Here, we depict the origin of dislocation creation and void nucleation during uniaxial high strain rate tensile processes in face-centered-cubic (FCC) ductile metals. We find that the dislocations are created through three distinguished stages: (i) Flattened octahedral structures (FOSs) are randomly activated by thermal fluctuations; (ii) The double-layer defect clusters are formed by self-organized stacking of FOSs on the close-packed plane; (iii) The stacking faults are formed and the Shockley partial dislocations are created from the double-layer defect clusters. Whereas, the void nucleation is shown to follow a two-stage description. We demonstrate that our findings on the origin of dislocation creation and void nucleation are universal for a variety of FCC ductile metals with low stacking fault energies.

  6. Reliability analysis and initial requirements for FC systems and stacks

    Science.gov (United States)

    Åström, K.; Fontell, E.; Virtanen, S.

    In the year 2000 Wärtsilä Corporation started an R&D program to develop SOFC systems for CHP applications. The program aims to bring to the market highly efficient, clean and cost competitive fuel cell systems with rated power output in the range of 50-250 kW for distributed generation and marine applications. In the program Wärtsilä focuses on system integration and development. System reliability and availability are key issues determining the competitiveness of the SOFC technology. In Wärtsilä, methods have been implemented for analysing the system in respect to reliability and safety as well as for defining reliability requirements for system components. A fault tree representation is used as the basis for reliability prediction analysis. A dynamic simulation technique has been developed to allow for non-static properties in the fault tree logic modelling. Special emphasis has been placed on reliability analysis of the fuel cell stacks in the system. A method for assessing reliability and critical failure predictability requirements for fuel cell stacks in a system consisting of several stacks has been developed. The method is based on a qualitative model of the stack configuration where each stack can be in a functional, partially failed or critically failed state, each of the states having different failure rates and effects on the system behaviour. The main purpose of the method is to understand the effect of stack reliability, critical failure predictability and operating strategy on the system reliability and availability. An example configuration, consisting of 5 × 5 stacks (series of 5 sets of 5 parallel stacks) is analysed in respect to stack reliability requirements as a function of predictability of critical failures and Weibull shape factor of failure rate distributions.

  7. Introduction to lattice gauge theory

    International Nuclear Information System (INIS)

    Gupta, R.

    1987-01-01

    The lattice formulation of Quantum Field Theory (QFT) can be exploited in many ways. We can derive the lattice Feynman rules and carry out weak coupling perturbation expansions. The lattice then serves as a manifestly gauge invariant regularization scheme, albeit one that is more complicated than standard continuum schemes. Strong coupling expansions: these give us useful qualitative information, but unfortunately no hard numbers. The lattice theory is amenable to numerical simulations by which one calculates the long distance properties of a strongly interacting theory from first principles. The observables are measured as a function of the bare coupling g and a gauge invariant cut-off ≅ 1/α, where α is the lattice spacing. The continuum (physical) behavior is recovered in the limit α → 0, at which point the lattice artifacts go to zero. This is the more powerful use of lattice formulation, so in these lectures the author focuses on setting up the theory for the purpose of numerical simulations to get hard numbers. The numerical techniques used in Lattice Gauge Theories have their roots in statistical mechanics, so it is important to develop an intuition for the interconnection between quantum mechanics and statistical mechanics. This will be the emphasis of the first lecture. In the second lecture, the author reviews the essential ingredients of formulating QCD on the lattice and discusses scaling and the continuum limit. In the last lecture the author summarizes the status of some of the main results. He also mentions the bottlenecks and possible directions for research. 88 refs

  8. Evidence for photo-induced monoclinic metallic VO2 under high pressure

    International Nuclear Information System (INIS)

    Hsieh, Wen-Pin; Mao, Wendy L.; Trigo, Mariano; Reis, David A.; Andrea Artioli, Gianluca; Malavasi, Lorenzo

    2014-01-01

    We combine ultrafast pump-probe spectroscopy with a diamond-anvil cell to decouple the insulator-metal electronic transition from the lattice symmetry changing structural transition in the archetypal strongly correlated material vanadium dioxide. Coherent phonon spectroscopy enables tracking of the photo-excited phonon vibrational frequencies of the low temperature, monoclinic (M 1 )-insulating phase that transforms into the metallic, tetragonal rutile structured phase at high temperature or via non-thermal photo-excitations. We find that in contrast with ambient pressure experiments where strong photo-excitation promptly induces the electronic transition along with changes in the lattice symmetry, at high pressure, the coherent phonons of the monoclinic (M 1 ) phase are still clearly observed upon the photo-driven phase transition to a metallic state. These results demonstrate the possibility of synthesizing and studying transient phases under extreme conditions

  9. PRECISION COSMOGRAPHY WITH STACKED VOIDS

    International Nuclear Information System (INIS)

    Lavaux, Guilhem; Wandelt, Benjamin D.

    2012-01-01

    We present a purely geometrical method for probing the expansion history of the universe from the observation of the shape of stacked voids in spectroscopic redshift surveys. Our method is an Alcock-Paczyński (AP) test based on the average sphericity of voids posited on the local isotropy of the universe. It works by comparing the temporal extent of cosmic voids along the line of sight with their angular, spatial extent. We describe the algorithm that we use to detect and stack voids in redshift shells on the light cone and test it on mock light cones produced from N-body simulations. We establish a robust statistical model for estimating the average stretching of voids in redshift space and quantify the contamination by peculiar velocities. Finally, assuming that the void statistics that we derive from N-body simulations is preserved when considering galaxy surveys, we assess the capability of this approach to constrain dark energy parameters. We report this assessment in terms of the figure of merit (FoM) of the dark energy task force and in particular of the proposed Euclid mission which is particularly suited for this technique since it is a spectroscopic survey. The FoM due to stacked voids from the Euclid wide survey may double that of all other dark energy probes derived from Euclid data alone (combined with Planck priors). In particular, voids seem to outperform baryon acoustic oscillations by an order of magnitude. This result is consistent with simple estimates based on mode counting. The AP test based on stacked voids may be a significant addition to the portfolio of major dark energy probes and its potentialities must be studied in detail.

  10. Effect of flow parameters on flare stack generator noise

    International Nuclear Information System (INIS)

    Dinn, T.S.

    1998-01-01

    The SoundPLAN Computer Noise Model was used to determine the general effect of flare noise in a community adjacent to a petrochemical plant. Tests were conducted to determine the effect of process flow conditions and the pulsating flame on the flare stack generator noise from both a refinery flare and process flare. Flaring under normal plant operations, the flaring of fuel gas and the flaring of hydrogen were the three conditions that were tested. It was shown that the steam flow rate was the determining factor in the flare stack generated noise. Variations in the water seal level in the flare line surge tank increased or decreased the gas flowrate, which resulted in a pulsating flame. The period and amplitude of the pulsating noise from the flare stacks was determined by measuring several parameters. Flare stack noise oscillations were found to be greater for the process flare than for the refinery flare stack. It was suggested that minimizing the amount of steam fed to the flare and improving the burner design would minimize noise. 2 tabs., 6 figs

  11. Stack Parameters Effect on the Performance of Anharmonic Resonator Thermoacoustic Heat Engine

    KAUST Repository

    Nouh, Mostafa A.

    2014-01-01

    A thermoacoustic heat engine (TAHE) converts heat into acoustic power with no moving parts. It exhibits several advantages over traditional engines, such as simple design, stable functionality, and environment-friendly working gas. In order to further improve the performance of TAHE, stack parameters need to be optimized. Stack\\'s position, length and plate spacing are the three main parameters that have been investigated in this study. Stack\\'s position dictates both the efficiency and the maximum produced acoustic power of the heat engine. Positioning the stack closer to the pressure anti-node might ensure high efficiency on the expense of the maximum produced acoustic power. It is noticed that the TAHE efficiency can further be improved by spacing the plates of the stack at a value of 2.4 of the thermal penetration depth, δk . Changes in the stack length will not affect the efficiency much as long as the temperature gradient across the stack, as a ratio of the critical temperature gradient ψ is more than 1. Upon interpreting the effect of these variations, attempts are made towards reaching the engine\\'s most powerful operating point.

  12. Basis reduction for layered lattices

    NARCIS (Netherlands)

    Torreão Dassen, Erwin

    2011-01-01

    We develop the theory of layered Euclidean spaces and layered lattices. We present algorithms to compute both Gram-Schmidt and reduced bases in this generalized setting. A layered lattice can be seen as lattices where certain directions have infinite weight. It can also be

  13. Basis reduction for layered lattices

    NARCIS (Netherlands)

    E.L. Torreão Dassen (Erwin)

    2011-01-01

    htmlabstractWe develop the theory of layered Euclidean spaces and layered lattices. With this new theory certain problems that usually are solved by using classical lattices with a "weighting" gain a new, more natural form. Using the layered lattice basis reduction algorithms introduced here these

  14. Progress of MCFC stack technology at Toshiba

    Energy Technology Data Exchange (ETDEWEB)

    Hori, M.; Hayashi, T.; Shimizu, Y. [Toshiba Corp., Tokyo (Japan)

    1996-12-31

    Toshiba is working on the development of MCFC stack technology; improvement of cell characteristics, and establishment of separator technology. For the cell technology, Toshiba has concentrated on both the restraints of NiO cathode dissolution and electrolyte loss from cells, which are the critical issues to extend cell life in MCFC, and great progress has been made. On the other hand, recognizing that the separator is one of key elements in accomplishing reliable and cost-competitive MCFC stacks, Toshiba has been accelerating the technology establishment and verification of an advanced type separator. A sub-scale stack with such a separator was provided for an electric generating test, and has been operated for more than 10,000 hours. This paper presents several topics obtained through the technical activities in the MCFC field at Toshiba.

  15. Calculation of tritium release from reactor's stack

    International Nuclear Information System (INIS)

    Akhadi, M.

    1996-01-01

    Method for calculation of tritium release from nuclear to environment has been discussed. Part of gas effluent contain tritium in form of HTO vapor released from reactor's stack was sampled using silica-gel. The silica-gel was put in the water to withdraw HTO vapor absorbed by silica-gel. Tritium concentration in the water was measured by liquid scintillation counter of Aloka LSC-703. Tritium concentration in the gas effluent and total release of tritium from reactor's stack during certain interval time were calculated using simple mathematic formula. This method has examined for calculation of tritium release from JRR-3M's stack of JAERI, Japan. From the calculation it was obtained the value of tritium release as much as 4.63 x 10 11 Bq during one month. (author)

  16. Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions

    KAUST Repository

    Chiu, Ming-Hui

    2016-09-20

    It is critically important to characterize the band alignment in semiconductor heterojunctions (HJs) because it controls the electronic and optical properties. However, the well-known Anderson\\'s model usually fails to predict the band alignment in bulk HJ systems due to the presence of charge transfer at the interfacial bonding. Atomically thin 2D transition metal dichalcogenide materials have attracted much attention recently since the ultrathin HJs and devices can be easily built and they are promising for future electronics. The vertical HJs based on 2D materials can be constructed via van der Waals stacking regardless of the lattice mismatch between two materials. Despite the defect-free characteristics of the junction interface, experimental evidence is still lacking on whether the simple Anderson rule can predict the band alignment of HJs. Here, the validity of Anderson\\'s model is verified for the 2D heterojunction systems and the success of Anderson\\'s model is attributed to the absence of dangling bonds (i.e., interface dipoles) at the van der Waal interface. The results from the work set a foundation allowing the use of powerful Anderson\\'s rule to determine the band alignments of 2D HJs, which is beneficial to future electronic, photonic, and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. LAB3 Cosmic Ray Test Stand Analysis of Steel Stack Supports

    International Nuclear Information System (INIS)

    Cease, H.

    1998-01-01

    A cosmic ray test stand is being constructed at Lab 3. The stand consists of two stacks of steel plates one resting on top of the other. The top stack is composed of 6 plates of steel making an overall stack size of 34.5-inch x 40-inch x 99-inch. The bottom stack also has 6 layers of plate making an overall size of approximately 49.5-inch x 82-inch x 99-inch. The bottom stack is supported with three support legs. See drawing 3823.000ME-900428 for the individual plate orientation. The minimum support leg size and necessary welds between plates are determined.

  18. He atom surface spectroscopy: Surface lattice dynamics of insulators, metals and metal overlayers

    International Nuclear Information System (INIS)

    1990-01-01

    During the first three years of this grant (1985--1988) the effort was devoted to the construction of a state-of-the-art He atom scattering (HAS) instrument which would be capable of determining the structure and dynamics of metallic, semiconductor or insulator crystal surfaces. The second three year grant period (1988--1991) has been dedicated to measurements. The construction of the instrument went better than proposed; it was within budget, finished in the proposed time and of better sensitivity and resolution than originally planned. The same success has been carried over to the measurement phase where the concentration has been on studies of insulator surfaces, as discussed in this paper. The experiments of the past three years have focused primarily on the alkali halides with a more recent shift to metal oxide crystal surfaces. Both elastic and inelastic scattering experiments were carried out on LiF, NaI, NaCl, RbCl, KBr, RbBr, RbI, CsF, CsI and with some preliminary work on NiO and MgO

  19. Lattice-Based Revocable Certificateless Signature

    Directory of Open Access Journals (Sweden)

    Ying-Hao Hung

    2017-10-01

    Full Text Available Certificateless signatures (CLS are noticeable because they may resolve the key escrow problem in ID-based signatures and break away the management problem regarding certificate in conventional signatures. However, the security of the mostly previous CLS schemes relies on the difficulty of solving discrete logarithm or large integer factorization problems. These two problems would be solved by quantum computers in the future so that the signature schemes based on them will also become insecure. For post-quantum cryptography, lattice-based cryptography is significant due to its efficiency and security. However, no study on addressing the revocation problem in the existing lattice-based CLS schemes is presented. In this paper, we focus on the revocation issue and present the first revocable CLS (RCLS scheme over lattices. Based on the short integer solution (SIS assumption over lattices, the proposed lattice-based RCLS scheme is shown to be existential unforgeability against adaptive chosen message attacks. By performance analysis and comparisons, the proposed lattice-based RCLS scheme is better than the previously proposed lattice-based CLS scheme, in terms of private key size, signature length and the revocation mechanism.

  20. 3000% high-field magnetoresistance in super-lattices of CoFe nanoparticles

    International Nuclear Information System (INIS)

    Tan, Reasmey P.; Carrey, Julian; Respaud, Marc; Desvaux, Celine; Renaud, Philippe; Chaudret, Bruno

    2008-01-01

    We report on magnetotransport measurements on millimeter-large super-lattices of CoFe nanoparticles surrounded by an organic layer. Electrical properties are typical of Coulomb blockade in three-dimensional arrays of nanoparticles. A large high-field magnetoresistance, reaching up to 3000%, is measured between 1.8 and 10 K. This exceeds by two orders of magnitude magnetoresistance values generally measured in arrays of 3d transition metal ferromagnetic nanoparticles. The magnetoresistance amplitude scales with the magnetic field/temperature ratio and displays an unusual exponential dependency with the applied voltage. The magnetoresistance abruptly disappears below 1.8 K. We propose that the magnetoresistance is due to some individual paramagnetic moments localized between the metallic cores of the nanoparticles, the origin of which is discussed

  1. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  2. Lattice Higgs models

    International Nuclear Information System (INIS)

    Jersak, J.

    1986-01-01

    This year has brought a sudden interest in lattice Higgs models. After five years of only modest activity we now have many new results obtained both by analytic and Monte Carlo methods. This talk is a review of the present state of lattice Higgs models with particular emphasis on the recent development

  3. Nuclear lattice simulations

    Directory of Open Access Journals (Sweden)

    Epelbaum E.

    2010-04-01

    Full Text Available We review recent progress on nuclear lattice simulations using chiral effective field theory. We discuss lattice results for dilute neutron matter at next-to-leading order, three-body forces at next-to-next-toleading order, isospin-breaking and Coulomb effects, and the binding energy of light nuclei.

  4. Nonlinearly stacked low noise turbofan stator

    Science.gov (United States)

    Schuster, William B. (Inventor); Nolcheff, Nick A. (Inventor); Gunaraj, John A. (Inventor); Kontos, Karen B. (Inventor); Weir, Donald S. (Inventor)

    2009-01-01

    A nonlinearly stacked low noise turbofan stator vane having a characteristic curve that is characterized by a nonlinear sweep and a nonlinear lean is provided. The stator is in an axial fan or compressor turbomachinery stage that is comprised of a collection of vanes whose highly three-dimensional shape is selected to reduce rotor-stator and rotor-strut interaction noise while maintaining the aerodynamic and mechanical performance of the vane. The nonlinearly stacked low noise turbofan stator vane reduces noise associated with the fan stage of turbomachinery to improve environmental compatibility.

  5. Stress-induced formation mechanism of stacking fault tetrahedra in nano-cutting of single crystal copper

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Quanlong [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Bai, Qingshun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Chen, Jiaxuan, E-mail: wangquanlong0@hit.edu.cn [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Guo, Yongbo [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Xie, Wenkun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2015-11-15

    Graphical abstract: In this paper, molecular dynamics simulation is performed to study the distribution of dislocation defects and local atomic crystal structure of single crystal copper. The stress distribution is investigated which is calculated by virial stress and analyzed by static pressure. The results are shown in (a)–(d). It is indicated that the compressive stress mainly spreads over the shear-slip zone, and the tensile stress is consisted in flank friction zone, shown in (a). The high tensile stress in subsurface is the source of stress, shown in (b). By the driven action of the stress source, the initial stair-rod dislocation nucleates. Then the dislocation climbs along four {1 1 1} planes under the stress driven action, shown in (d). Finally, the SFT is formed by the interaction of the compressive stress and the tensile stress which come from the shear-slip zone and friction zone, respectively. Besides, stair-rod dislocation, stacking faults and dislocation loop are also nucleated in the subsurface, shown in (c). Dislocation distribution, local atomic crystal structure state and stress-induced formation process of SFT by atomic. - Highlights: • A novel defect structure “stress-induced stacking fault tetrahedra” is revealed. • Atomic structural evolution and stress state distribution of the SFT are studied. • The stress-induced formation mechanism of the SFT is proposed. - Abstract: Stacking fault tetrahedra commonly existed in subsurface of deformed face center cubic metals, has great influence on machining precision and surface roughness in nano-cutting. Here we report, a stacking fault tetrahedra is formed in subsurface of workpiece during nano-cutting. The variation of cutting force and subsurface defects distribution are studied by using molecular dynamics simulation. The stress distribution is investigated which is calculated by virial stress and analyzed by static compression. The result shows that the cutting force has a rapidly

  6. Stress-induced formation mechanism of stacking fault tetrahedra in nano-cutting of single crystal copper

    International Nuclear Information System (INIS)

    Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Guo, Yongbo; Xie, Wenkun

    2015-01-01

    Graphical abstract: In this paper, molecular dynamics simulation is performed to study the distribution of dislocation defects and local atomic crystal structure of single crystal copper. The stress distribution is investigated which is calculated by virial stress and analyzed by static pressure. The results are shown in (a)–(d). It is indicated that the compressive stress mainly spreads over the shear-slip zone, and the tensile stress is consisted in flank friction zone, shown in (a). The high tensile stress in subsurface is the source of stress, shown in (b). By the driven action of the stress source, the initial stair-rod dislocation nucleates. Then the dislocation climbs along four {1 1 1} planes under the stress driven action, shown in (d). Finally, the SFT is formed by the interaction of the compressive stress and the tensile stress which come from the shear-slip zone and friction zone, respectively. Besides, stair-rod dislocation, stacking faults and dislocation loop are also nucleated in the subsurface, shown in (c). Dislocation distribution, local atomic crystal structure state and stress-induced formation process of SFT by atomic. - Highlights: • A novel defect structure “stress-induced stacking fault tetrahedra” is revealed. • Atomic structural evolution and stress state distribution of the SFT are studied. • The stress-induced formation mechanism of the SFT is proposed. - Abstract: Stacking fault tetrahedra commonly existed in subsurface of deformed face center cubic metals, has great influence on machining precision and surface roughness in nano-cutting. Here we report, a stacking fault tetrahedra is formed in subsurface of workpiece during nano-cutting. The variation of cutting force and subsurface defects distribution are studied by using molecular dynamics simulation. The stress distribution is investigated which is calculated by virial stress and analyzed by static compression. The result shows that the cutting force has a rapidly

  7. Electrical and structural properties of a stacked metal layer contact to n-InP

    International Nuclear Information System (INIS)

    Huang, Wen-Chang; Horng, Chia-Tsung

    2011-01-01

    In this study, we found that the double metal contact structure in Pt/Al/n-InP diodes provides better rectification characteristics than conventional single-metal/n-InP Schottky diodes. The effective barrier height was measured to be 0.67 eV for a 400 deg. C-annealed Pt/Al/n-InP diode sample. The increase in the barrier height is attributed to the formation of Al 2 O 3 at the metal/n-InP contact interface during thermal annealing. The formation of the phase Al 2 O 3 phase was monitored by X-ray diffraction (XRD) analysis. The corresponding element profiles of Al and O were also confirmed at the metal/n-InP contact interface using secondary ion mass spectrum (SIMS) analysis. The lowering of the Schottky barrier height due to the inhomogeneity at the metal/n-InP junction is also discussed on the basis of the TE theory. The distribution of local effective Schottky barrier heights was explained by a model incorporating the existence of double Gaussian barrier heights, which represent the high barrier and low barrier of the full distribution in the temperature ranges of 83-198 and 198-300 K.

  8. Janus monolayers of transition metal dichalcogenides

    KAUST Repository

    Lu, Ang-Yu

    2017-05-15

    Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS2 monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements.

  9. SPECIFICATIONS FOR HIGH TEMPERATURE LATTICE TEST REACTOR BUILDING 318 PROJECT CAH-100

    Energy Technology Data Exchange (ETDEWEB)

    Vitro Engineering Company

    1964-07-15

    This is the specifications for the High Temperature Lattice Test Reactor Building 318 and it is divided into the following 21 divisions or chapters: (1) Excavating, Backfill & Grading; (2) Reinforced Concrete; (3) Masonry; (4) Structural Steel & Miscellaneous Metal Items, Contents - Division V; (5) Plumbing, Process & Service Piping; (6) Welding; (7) Insulated Metal Siding; (8) Roof Decks & Roofing; (9) Plaster Partitions & Ceiling; (10) Standard Doors, Windows & Hardware; (11) Shielding Doors; (12) Sprinkler System & Fire Extinguishers, Contents - Division XIII; (13) Heating, Ventilating & Air Conditioning; (14) Painting, Protective Coating & Floor Covering, Contents - Division XV; (15) Electrical; (16) Communications & Alarm Systems; (17) Special Equipment & Furnishings; (18) Overhead Bridge Crane; (19) Prefabricated Steel Building; (20) Paved Drive; and (21) Landscaping & Irrigation Sprinklers.

  10. Formation of interlayer gap and control of interlayer burr in dry drilling of stacked aluminum alloy plates

    Directory of Open Access Journals (Sweden)

    Tian Wei

    2016-02-01

    Full Text Available In aircraft assembly, interlayer burr formation in dry drilling of stacked metal materials is a common problem. Traditional manual deburring operation seriously affects the assembly quality and assembly efficiency, is time-consuming and costly, and is not conducive to aircraft automatic assembly based on industrial robot. In this paper, the formation of drilling exit burr and the influence of interlayer gap on interlayer burr formation were studied, and the mechanism of interlayer gap formation in drilling stacked aluminum alloy plates was investigated, a simplified mathematical model of interlayer gap based on the theory of plates and shells and finite element method was established. The relationship between interlayer gap and interlayer burr, as well as the effect of feed rate and pressing force on interlayer burr height and interlayer gap was discussed. The result shows that theoretical interlayer gap has a positive correlation with interlayer burr height and preloading pressing force is an effective method to control interlayer burr formation.

  11. Computing the writhe on lattices

    International Nuclear Information System (INIS)

    Laing, C; Sumners, D W

    2006-01-01

    Given a polygonal closed curve on a lattice or space group, we describe a method for computing the writhe of the curve as the average of weighted projected writhing numbers of the polygon in a few directions. These directions are determined by the lattice geometry, the weights are determined by areas of regions on the unit 2-sphere, and the regions are formed by the tangent indicatrix to the polygonal curve. We give a new formula for the writhe of polygons on the face centred cubic lattice and prove that the writhe of polygons on the body centred cubic lattice, the hexagonal simple lattice, and the diamond space group is always a rational number, and discuss applications to ring polymers

  12. Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

    Science.gov (United States)

    Wu, Bin

    Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

  13. The model of metal-insulator phase transition in vanadium oxide

    International Nuclear Information System (INIS)

    Vikhnin, V.S.; Lysenko, S.; Rua, A.; Fernandez, F.; Liu, H.

    2005-01-01

    Thermally induced metal-insulator phase transitions (PT) in VO 2 thin films are studied theoretically and experimentally. The hysteresis phenomena in the region of the transition for different type thin films were investigated. The phenomenological model of the PT is suggested. The charge transfer-lattice instability in VO 2 metallic phase is considered as basis of the first order metal-insulator PT in VO 2 . The charge transfer is treated as an order parameter

  14. A free-surface lattice Boltzmann method for modelling the filling of expanding cavities by Bingham fluids.

    Science.gov (United States)

    Ginzburg, Irina; Steiner, Konrad

    2002-03-15

    The filling process of viscoplastic metal alloys and plastics in expanding cavities is modelled using the lattice Boltzmann method in two and three dimensions. These models combine the regularized Bingham model for viscoplastic fluids with a free-interface algorithm. The latter is based on a modified immiscible lattice Boltzmann model in which one species is the fluid and the other one is considered to be a vacuum. The boundary conditions at the curved liquid-vacuum interface are met without any geometrical front reconstruction from a first-order Chapman-Enskog expansion. The numerical results obtained with these models are found in good agreement with available theoretical and numerical analysis.

  15. Evaluation of Workpiece Temperature during Drilling of GLARE Fiber Metal Laminates Using Infrared Techniques: Effect of Cutting Parameters, Fiber Orientation and Spray Mist Application

    Science.gov (United States)

    Giasin, Khaled; Ayvar-Soberanis, Sabino

    2016-01-01

    The rise in cutting temperatures during the machining process can influence the final quality of the machined part. The impact of cutting temperatures is more critical when machining composite-metal stacks and fiber metal laminates due to the stacking nature of those hybrids which subjects the composite to heat from direct contact with metallic part of the stack and the evacuated hot chips. In this paper, the workpiece surface temperature of two grades of fiber metal laminates commercially know as GLARE is investigated. An experimental study was carried out using thermocouples and infrared thermography to determine the emissivity of the upper, lower and side surfaces of GLARE laminates. In addition, infrared thermography was used to determine the maximum temperature of the bottom surface of machined holes during drilling GLARE under dry and minimum quantity lubrication (MQL) cooling conditions under different cutting parameters. The results showed that during the machining process, the workpiece surface temperature increased with the increase in feed rate and fiber orientation influenced the developed temperature in the laminate. PMID:28773757

  16. Hyper-lattice algebraic model for data warehousing

    CERN Document Server

    Sen, Soumya; Chaki, Nabendu

    2016-01-01

    This book presents Hyper-lattice, a new algebraic model for partially ordered sets, and an alternative to lattice. The authors analyze some of the shortcomings of conventional lattice structure and propose a novel algebraic structure in the form of Hyper-lattice to overcome problems with lattice. They establish how Hyper-lattice supports dynamic insertion of elements in a partial order set with a partial hierarchy between the set members. The authors present the characteristics and the different properties, showing how propositions and lemmas formalize Hyper-lattice as a new algebraic structure.

  17. An overview of lattice QCD

    International Nuclear Information System (INIS)

    Woloshyn, R.M.

    1988-03-01

    The basic concepts of the Lagrangian formulation of lattice field theory are discussed. The Wilson and staggered schemes for dealing with fermions on the lattice are described. Some recent results for hadron masses and vector and axial vector current matrix elements in lattice QCD are reviewed. (Author) (118 refs., 16 figs.)

  18. Analysis of preemption costs for the stack cache

    DEFF Research Database (Denmark)

    Naji, Amine; Abbaspour, Sahar; Brandner, Florian

    2018-01-01

    , the analysis of the stack cache was limited to individual tasks, ignoring aspects related to multitasking. A major drawback of the original stack cache design is that, due to its simplicity, it cannot hold the data of multiple tasks at the same time. Consequently, the entire cache content needs to be saved...

  19. A stacking method and its applications to Lanzarote tide gauge records

    Science.gov (United States)

    Zhu, Ping; van Ruymbeke, Michel; Cadicheanu, Nicoleta

    2009-12-01

    A time-period analysis tool based on stacking is introduced in this paper. The original idea comes from the classical tidal analysis method. It is assumed that the period of each major tidal component is precisely determined based on the astronomical constants and it is unchangeable with time at a given point in the Earth. We sum the tidal records at a fixed tidal component center period T then take the mean of it. The stacking could significantly increase the signal-to-noise ratio (SNR) if a certain number of stacking circles is reached. The stacking results were fitted using a sinusoidal function, the amplitude and phase of the fitting curve is computed by the least squares methods. The advantage of the method is that: (1) an individual periodical signal could be isolated by stacking; (2) one can construct a linear Stacking-Spectrum (SSP) by changing the stacking period Ts; (3) the time-period distribution of the singularity component could be approximated by a Sliding-Stacking approach. The shortcoming of the method is that in order to isolate a low energy frequency or separate the nearby frequencies, we need a long enough series with high sampling rate. The method was tested with a numeric series and then it was applied to 1788 days Lanzarote tide gauge records as an example.

  20. Hadron structure from lattice QCD

    International Nuclear Information System (INIS)

    Schaefer, Andreas

    2008-01-01

    Some elements and current developments of lattice QCD are reviewed, with special emphasis on hadron structure observables. In principle, high precision experimental and lattice data provide nowadays a very detailled picture of the internal structure of hadrons. However, to relate both, a very good controle of perturbative QCD is needed in many cases. Finally chiral perturbation theory is extremely helpful to boost the precision of lattice calculations. The mutual need and benefit of all four elements: experiment, lattice QCD, perturbative QCD and chiral perturbation theory is the main topic of this review