WorldWideScience

Sample records for stacked j1-j2 layers

  1. Effect of Dzyaloshinskii-Moriya on Magnetic orders of J_1-J_2 Antiferromagnetic Heisenberg model

    Directory of Open Access Journals (Sweden)

    Fariba Masoudi

    2017-11-01

    Full Text Available Motivated by recent experiments that detects Dzyaloshinskii-Moriya (DM interaction in , we study the effects of DM interaction on magnetic orders of J1-J2 antiferromagnetic Heisenberg model. First, we find the classical phase diagram of the model using Luttinger-Tisza approximation. In this approximation, the classical phase diagram has two phases. For , the model has canted Neel and DM interaction cants the spins of one on the subluttices. The ground state of model is classically degenerate for , including infinit numbers of vorticity vectors that are able to minimize the model. This phase is important because of the probability of the existence of quantum spin liquid in this region. To investigate the effect of quantum fluctuation on the stability of the classical phase diagram, linear spin wave theory of  Holstein-Primakoff is used. The results show that in the classical degeneracy regime, the quantum fluctuations for  cause spiral order in this region. The ground state of model remains disorder for, and this region is a good place for finding quantum spin liquid

  2. Ground-state ordering of the J1-J2 model on the simple cubic and body-centered cubic lattices

    Science.gov (United States)

    Farnell, D. J. J.; Götze, O.; Richter, J.

    2016-06-01

    The J1-J2 Heisenberg model is a "canonical" model in the field of quantum magnetism in order to study the interplay between frustration and quantum fluctuations as well as quantum phase transitions driven by frustration. Here we apply the coupled cluster method (CCM) to study the spin-half J1-J2 model with antiferromagnetic nearest-neighbor bonds J1>0 and next-nearest-neighbor bonds J2>0 for the simple cubic (sc) and body-centered cubic (bcc) lattices. In particular, we wish to study the ground-state ordering of these systems as a function of the frustration parameter p =z2J2/z1J1 , where z1 (z2) is the number of nearest (next-nearest) neighbors. We wish to determine the positions of the phase transitions using the CCM and we aim to resolve the nature of the phase transition points. We consider the ground-state energy, order parameters, spin-spin correlation functions, as well as the spin stiffness in order to determine the ground-state phase diagrams of these models. We find a direct first-order phase transition at a value of p =0.528 from a state of nearest-neighbor Néel order to next-nearest-neighbor Néel order for the bcc lattice. For the sc lattice the situation is more subtle. CCM results for the energy, the order parameter, the spin-spin correlation functions, and the spin stiffness indicate that there is no direct first-order transition between ground-state phases with magnetic long-range order, rather it is more likely that two phases with antiferromagnetic long range are separated by a narrow region of a spin-liquid-like quantum phase around p =0.55 . Thus the strong frustration present in the J1-J2 Heisenberg model on the sc lattice may open a window for an unconventional quantum ground state in this three-dimensional spin model.

  3. Investigation of possible phase transition of the frustrated spin-1/2 J 1-J 2-J 3 model on the square lattice.

    Science.gov (United States)

    Hu, Ai-Yuan; Wang, Huai-Yu

    2017-09-05

    The frustrated spin-1/2 J 1 -J 2 -J 3 antiferromagnet with exchange anisotropy on the two-dimensional square lattice is investigated. The exchange anisotropy is presented by η with 0 ≤ η J 1 , J 2 , J 3 and anisotropy on the possible phase transition of the Néel state and collinear state are studied comprehensively. Our results indicate that for J 3  > 0 there are upper limits [Formula: see text] and η c values. When 0 J 3  ≤ [Formula: see text] and 0 ≤ η ≤ η c , the Néel and collinear states have the same order-disorder transition point at J 2  = J 1 /2. Nevertheless, when the J 3 and η values beyond the upper limits, it is a paramagnetic phase at J 2  = J 1 /2. For J 3  J 2  = J 1 /2. Therefore, for J 2  = J 1 /2, under such parameters, a first-order phase transition between the two states for these two cases below the critical temperatures may occur. When J 2  ≠ J 1 /2, the Néel and collinear states may also exist, while they have different critical temperatures. When J 2  > J 1 /2, a first-order phase transition between the two states may also occur. However, for J 2  J 1 /2, the Néel state is always more stable than the collinear state.

  4. U (1 ) -symmetric infinite projected entangled-pair states study of the spin-1/2 square J1-J2 Heisenberg model

    Science.gov (United States)

    Haghshenas, R.; Sheng, D. N.

    2018-05-01

    We develop an improved variant of U (1 ) -symmetric infinite projected entangled-pair states (iPEPS) ansatz to investigate the ground-state phase diagram of the spin-1 /2 square J1-J2 Heisenberg model. In order to improve the accuracy of the ansatz, we discuss a simple strategy to select automatically relevant symmetric sectors and also introduce an optimization method to treat second-neighbor interactions more efficiently. We show that variational ground-state energies of the model obtained by the U (1 ) -symmetric iPEPS ansatz (for a fixed bond dimension D ) set a better upper bound, improving previous tensor-network-based results. By studying the finite-D scaling of the magnetically order parameter, we find a Néel phase for J2/J1place at J2c2/J1=0.610 (2 ) to the conventional Stripe phase. We compare our results with earlier DMRG and PEPS studies and suggest future directions for resolving remaining issues.

  5. Mechanical testing of adherence of stacked layers in tubular geometry

    Energy Technology Data Exchange (ETDEWEB)

    Correia, L.A.; Schuring, E.W.; Van Delft, Y.C. [ECN Energy Efficiency in the Industry, Petten (Netherlands)

    2007-09-15

    For the development of new molecular separation technologies strong robust tubular membrane systems are required. The fragile membranes, however, need a strong defect free support such as a porous asymmetric ceramic tube. Mechanical failure of these ceramic membrane systems during manufacturing and operation is mainly caused by delamination of the stacked layers. Therefore development is focused on improving the adherence. As no standard mechanical test for tubular samples is available yet, a new tensile test was developed to facilitate the current research. The most important components in the new equipment is a test tool with a curvature matching that of the test sample and a sample casing that align and guide the test tool during the tensile test. With this tensile test the manufacturing procedure for the ECN standard tubular {alpha}-alumina support was optimized. Firing the asymmetric support at 1300C resulted in the highest mechanical strength for the support system with cohesive fracture in the support tube. With the test developed the process condition could be identified where the material of the support tube is the weakest link in the support system.

  6. About zone structure of a stack of a cholesteric liquid crystal and isotropic medium layers

    International Nuclear Information System (INIS)

    Gevorgyan, A H; Harutyunyan, E M; Matinyan, G K; Harutyunyan, M Z

    2014-01-01

    The optical properties of a stack of metamaterial-based cholesteric liquid crystal (CLC) layers and isotropic medium layers are investigated. CLCs with two types of chiral nihility are defined. The peculiarities of the reflection spectra of this system are investigated and it is shown that the reflection spectra of the stacks of CLC layers of these two types differ from each other. The influence of: the CLC sublayer thicknesses; incidence angle; local dielectric (magnetic) anisotropy of the CLC layers; refraction indices and thicknesses of the isotropic media layers on the reflection spectra and other optical characteristics of the system is investigated.

  7. Inter-layered clay stacks in Jurassic shales

    Science.gov (United States)

    Pye, K.; Krinsley, D. H.

    1983-01-01

    Scanning electron microscopy in the backscattered electron mode is used together with energy-dispersive X-ray microanalysis to show that Lower Jurassic shales from the North Sea Basin contain large numbers of clay mineral stacks up to 150 microns in size. Polished shale sections are examined to determine the size, shape orientation, textural relationships, and internal compositional variations of the clays. Preliminary evidence that the clay stacks are authigenic, and may have formed at shallow burial depths during early diagenesis, is presented.

  8. Evaluation of interlayer ferromagnetic coupling for stacked media by adding reference layer

    International Nuclear Information System (INIS)

    Tham, K K; Saito, S; Itagaki, N; Hinata, S; Takahashi, M; Hasegawa, D

    2011-01-01

    The trial for quantitative evaluation of interlayer ferromagnetic coupling between granular and cap layer in stacked media is reported. The evaluation is realized by analyzing M-H loop of stacked media with another reference layer added on the cap layer. The reference layer is antiferromagnetically coupled with the cap layer through non-magnetic spacer layer. In this experiment, Rh which leads to antiferromagnetic coupling constant along film normal direction of around 2 erg/cm 2 was used as non-magnetic spacer layer. According to the evaluation result done by this method, when thickness of the spacer Pd layer between granular layer and cap layer is increased to 1.1 nm, ferromagnetic coupling constant is weakened to 7.2 erg/cm 2 which results in reduction of saturation field.

  9. Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain.

    Science.gov (United States)

    Zhang, Wenrui; Li, Mingtao; Chen, Aiping; Li, Leigang; Zhu, Yuanyuan; Xia, Zhenhai; Lu, Ping; Boullay, Philippe; Wu, Lijun; Zhu, Yimei; MacManus-Driscoll, Judith L; Jia, Quanxi; Zhou, Honghui; Narayan, Jagdish; Zhang, Xinghang; Wang, Haiyan

    2016-07-06

    Study of layered complex oxides emerge as one of leading topics in fundamental materials science because of the strong interplay among intrinsic charge, spin, orbital, and lattice. As a fundamental basis of heteroepitaxial thin film growth, interfacial strain can be used to design materials that exhibit new phenomena beyond their conventional forms. Here, we report a strain-driven self-assembly of bismuth-based supercell (SC) with a two-dimensional (2D) layered structure. With combined experimental analysis and first-principles calculations, we investigated the full SC structure and elucidated the fundamental growth mechanism achieved by the strain-enabled self-assembled atomic layer stacking. The unique SC structure exhibits room-temperature ferroelectricity, enhanced magnetic responses, and a distinct optical bandgap from the conventional double perovskite structure. This study reveals the important role of interfacial strain modulation and atomic rearrangement in self-assembling a layered singe-phase multiferroic thin film, which opens up a promising avenue in the search for and design of novel 2D layered complex oxides with enormous promise.

  10. Is There Excitation Energy Transfer between Different Layers of Stacked Photosystem-II-Containing Thylakoid Membranes?

    Science.gov (United States)

    Farooq, Shazia; Chmeliov, Jevgenij; Trinkunas, Gediminas; Valkunas, Leonas; van Amerongen, Herbert

    2016-04-07

    We have compared picosecond fluorescence decay kinetics for stacked and unstacked photosystem II membranes in order to evaluate the efficiency of excitation energy transfer between the neighboring layers. The measured kinetics were analyzed in terms of a recently developed fluctuating antenna model that provides information about the dimensionality of the studied system. Independently of the stacking state, all preparations exhibited virtually the same value of the apparent dimensionality, d = 1.6. Thus, we conclude that membrane stacking does not affect the efficiency of the delivery of excitation energy toward the reaction centers but ensures a more compact organization of the thylakoid membranes within the chloroplast and separation of photosystems I and II.

  11. Influence of the charge double layer on solid oxide fuel cell stack behavior

    Science.gov (United States)

    Whiston, Michael M.; Bilec, Melissa M.; Schaefer, Laura A.

    2015-10-01

    While the charge double layer effect has traditionally been characterized as a millisecond phenomenon, longer timescales may be possible under certain operating conditions. This study simulates the dynamic response of a previously developed solid oxide fuel cell (SOFC) stack model that incorporates the charge double layer via an equivalent circuit. The model is simulated under step load changes. Baseline conditions are first defined, followed by consideration of minor and major deviations from the baseline case. This study also investigates the behavior of the SOFC stack with a relatively large double layer capacitance value, as well as operation of the SOFC stack under proportional-integral (PI) control. Results indicate that the presence of the charge double layer influences the SOFC stack's settling time significantly under the following conditions: (i) activation and concentration polarizations are significantly increased, or (ii) a large value of the double layer capacitance is assumed. Under normal (baseline) operation, on the other hand, the charge double layer effect diminishes within milliseconds, as expected. It seems reasonable, then, to neglect the charge double layer under normal operation. However, careful consideration should be given to potential variations in operation or material properties that may give rise to longer electrochemical settling times.

  12. Electrostatic double-layer interaction between stacked charged bilayers

    Science.gov (United States)

    Hishida, Mafumi; Nomura, Yoko; Akiyama, Ryo; Yamamura, Yasuhisa; Saito, Kazuya

    2017-10-01

    The inapplicability of the DLVO theory to multilayered anionic bilayers is found in terms of the co-ion-valence dependence of the lamellar repeat distance. Most of the added salt is expelled from the interlamellar space to the bulk due to the Gibbs-Donnan effect on multiple bilayers with the bulk. The electrostatic double-layer interaction is well expressed by the formula recently proposed by Trefalt. The osmotic pressure due to the expelled ions, rather than the van der Waals interaction, is the main origin of the attractive force between the bilayers.

  13. Hidden symmetries in N-layer dielectric stacks

    Science.gov (United States)

    Liu, Haihao; Shoufie Ukhtary, M.; Saito, Riichiro

    2017-11-01

    The optical properties of a multilayer system with arbitrary N layers of dielectric media are investigated. Each layer is one of two dielectric media, with a thickness one-quarter the wavelength of light in that medium, corresponding to a central frequency f 0. Using the transfer matrix method, the transmittance T is calculated for all possible 2 N sequences for small N. Unexpectedly, it is found that instead of 2 N different values of T at f 0 (T 0), there are only (N/2+1) discrete values of T 0, for even N, and (N + 1) for odd N. We explain this high degeneracy in T 0 values by finding symmetry operations on the sequences that do not change T 0. Analytical formulae were derived for the T 0 values and their degeneracies as functions of N and an integer parameter for each sequence we call ‘charge’. Additionally, the bandwidth at f 0 and filter response of the transmission spectra are investigated, revealing asymptotic behavior at large N.

  14. Interactions between stacked layers of phenyl-modified silicene

    International Nuclear Information System (INIS)

    Spencer, Michelle J S; Snook, Ian K; Bassett, Michael R; Morishita, Tetsuya; Nakano, Hideyuki

    2013-01-01

    We use density functional theory (DFT) calculations to determine the interaction between phenyl-modified silicene nanosheets. The adhesion energy curves between the nanosheets are compared for different van der Waals density functional (vdW-DF) functionals and the DFT-D2 Grimme method. Our results show that there is a weak attraction between the sheets at close separations, that is stronger when vdWs forces are included. Without including vdWs forces the interaction is negligible and occurs at a much larger separation, highlighting the need to include such forces when modelling these nanosheets. Of the vdWs methods, the optB88 functional gives the strongest interaction energy while the Grimme gives the weakest, with the separation at which the nanosheets adhere more strongly varying between 10.04 and 11.24 Å, as measured by the distance between the silicene layers. As the modified nanosheets are brought closer together at separations as close at  ∼ 8 Å, the phenyl groups on the bottom of one nanosheet can fit in between the phenyl groups on the top of the adjacent nanosheet allowing some π − π interaction between the phenyl groups. We showed that the band gap can be modified by compressing the nanosheets together while retaining a small attraction between them. There is also a change from a direct to an indirect band gap. Such a property may be exploited for the application of these nanomaterials in optoelectronic devices. (paper)

  15. Method for the manufacture of a thin-layer battery stack on a three-dimensional substrate

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method for the manufacture of a thin-layer battery stack on a three-dimensional substrate. The invention further relates to a thin-layer battery stack on a three-dimensional substrate obtainable by such a method. Moreover, the invention relates to a device comprising such

  16. Stacking and electric field effects in atomically thin layers of GaN

    International Nuclear Information System (INIS)

    Xu, Dongwei; He, Haiying; Pandey, Ravindra; Karna, Shashi P

    2013-01-01

    Atomically thin layers of nitrides are a subject of interest due to their novel applications. In this paper, we focus on GaN multilayers, investigating their stability and the effects of stacking and electric fields on their electronic properties in the framework of density functional theory. Both bilayers and trilayers prefer a planar configuration rather than a buckled bulk-like configuration. The application of an external perpendicular electric field induces distinct stacking-dependent features in the electronic properties of nitride multilayers: the band gap of a monolayer does not change whereas that of a trilayer is significantly reduced. Such a stacking-dependent tunability of the band gap in the presence of an applied field suggests that multilayer GaN is a good candidate material for next generation devices at the nanoscale. (paper)

  17. Cell layer level generalized dynamic modeling of a PEMFC stack using VHDL-AMS language

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Fei; Blunier, Benjamin; Miraoui, Abdellatif; El-Moudni, Abdellah [Transport and Systems Laboratory (SeT) - EA 3317/UTBM, University of Technology of Belfort-Montbeliard, Rue Thierry Mieg, 90000 Belfort (France)

    2009-07-15

    A generalized, cell layer scale proton exchange membrane fuel cell (PEMFC) stack dynamic model is presented using VHDL-AMS (IEEE standard Very High Speed Integrated Circuit Hardware Description Language-Analog and Mixed-Signal Extensions) modeling language. A PEMFC stack system is a complex energy conversion system that covers three main energy domains: electrical, fluidic and thermal. The first part of this work shows the performance and the advantages of VHDL-AMS language when modeling such a complex system. Then, using the VHDL-AMS modeling standards, an electrical domain model, a fluidic domain model and a thermal domain model of the PEMFC stack are coupled and presented together. Thus, a complete coupled multi-domain fuel cell stack 1-D dynamic model is given. The simulation results are then compared with a Ballard 1.2 kW NEXA fuel cell system, and show a great agreement between the simulation and experimentation. This complex multi-domain VHDL-AMS stack model can be used for a model based control design or a Hardware-In-the-Loop application. (author)

  18. Influence of the stacking sequence of layers on the mechanical behavior of polymeric composite cylinders

    International Nuclear Information System (INIS)

    Carvalho, Osni de

    2006-01-01

    This work evaluated experimentally the influence of the stacking sequence of layers symmetrical and asymmetrical on the mechanical behavior of polymeric composite cylinders. For so much, two open-ended cylinders groups were manufactured by filament winding process, which had different stacking sequence related to the laminate midplane, characterizing symmetrical and asymmetrical laminates. The composite cylinders were made with epoxy matrix and carbon fiber as reinforcement. For evaluation of the mechanical strength, the cylinders were tested hydrostatically, which consisted of internal pressurization in a hydrostatic device through the utilization of a fluid until the cylinders burst. Additionally, were compared the strains and failure modes between the cylinders groups. The utilization of a finite element program allowed to conclude that this tool, very used in design, does not get to identify tensions in the fiber direction in each composite layer, as well as interlaminar shear stress, that appears in the cylinders with asymmetrical stacking sequence. The tests results showed that the stacking sequence had influence in the mechanical behavior of the composite cylinders, favoring the symmetrical construction. (author)

  19. Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

    International Nuclear Information System (INIS)

    Zheng Zhi-Wei; Huo Zong-Liang; Zhu Chen-Xin; Xu Zhong-Guang; Liu Jing; Liu Ming

    2011-01-01

    In this paper, we investigate an Al 2 O 3 /HfSiO stack as the blocking layer of a metal—oxide—nitride—oxide—silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al 2 O 3 /HfO 2 stack as the blocking layer, the sample with the Al 2 O 3 /HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al 2 O 3 /HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications. (interdisciplinary physics and related areas of science and technology)

  20. Unusual reflection of electromagnetic radiation from a stack of graphene layers at oblique incidence

    International Nuclear Information System (INIS)

    Bludov, Yu V; Peres, N M R; Vasilevskiy, M I

    2013-01-01

    We study the interaction of electromagnetic (EM) radiation with single-layer graphene and a stack of parallel graphene sheets at arbitrary angles of incidence. It is found that the behavior is qualitatively different for transverse magnetic (or p-polarized) and transverse electric (or s-polarized) waves. In particular, the absorbance of single-layer graphene attains a minimum (maximum) for the p (s)-polarization at the angle of total internal reflection when the light comes from a medium with a higher dielectric constant. In the case of equal dielectric constants of the media above and beneath graphene, for grazing incidence graphene is almost 100% transparent to p-polarized waves and acts as a tunable mirror for the s-polarization. These effects are enhanced for a stack of graphene sheets, so the system can work as a broad band polarizer. It is shown further that a periodic stack of graphene layers has the properties of a one-dimensional photonic crystal, with gaps (or stop bands) at certain frequencies. When an incident EM wave is reflected from this photonic crystal, the tunability of the graphene conductivity renders the possibility of controlling the gaps, and the structure can operate as a tunable spectral-selective mirror. (paper)

  1. Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres

    KAUST Repository

    Alamri, Amal M.; Fu, Po-Han; Lai, Kun-Yu; Wang, Hsin-Ping; Li, Lain-Jong; He, Jr-Hau

    2016-01-01

    An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%.

  2. Efficiency Enhancement of InGaN-Based Solar Cells via Stacking Layers of Light-Harvesting Nanospheres

    KAUST Repository

    Alamri, Amal M.

    2016-06-24

    An effective light-harvesting scheme for InGaN-based multiple quantum well solar cells is demonstrated using stacking layers of polystyrene nanospheres. Light-harvesting efficiencies on the solar cells covered with varied stacks of nanospheres are evaluated through numerical and experimental methods. The numerical simulation reveals that nanospheres with 3 stacking layers exhibit the most improved optical absorption and haze ratio as compared to those obtained by monolayer nanospheres. The experimental demonstration, agreeing with the theoretical analyses, shows that the application of 3-layer nanospheres improves the conversion efficiency of the solar cell by ~31%.

  3. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

    Science.gov (United States)

    Yu, Woo Jong; Li, Zheng; Zhou, Hailong; Chen, Yu; Wang, Yang; Huang, Yu; Duan, Xiangfeng

    2014-01-01

    The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration. PMID:23241535

  4. Structure and stacking faults in layered Mg-Zn-Y alloys: A first-principles study

    International Nuclear Information System (INIS)

    Datta, Aditi; Waghmare, U.V.; Ramamurty, U.

    2008-01-01

    We use first-principles density functional theory total energy calculations based on pseudo-potentials and plane-wave basis to assess stability of the periodic structures with different stacking sequences in Mg-Zn-Y alloys. For pure Mg, we find that the 6-layer (6l) structure with the ABACAB stacking is most stable after the lowest energy hcp (2l) structure with ABAB stacking. Addition of 2 at.% Y leads to stabilization of the structure to 6l sequence whereas the addition of 2 at.% Zn makes the 6l energetically comparable to that of the hcp. Stacking fault (SF) on the basal plane of 6l structure is higher in energy than that of the hcp 2l Mg, which further increases upon Y doping and decreases significantly with Zn doping. SF energy surface for the prismatic slip indicates activation of non-basal slip in alloys with a 6l structure. Charge density analysis shows that the 2l and 6l structures are electronically similar which might be a cause for better stability of 6l structure over a 4l sequence or other periodic structures. Thus, in an Mg-Zn-Y alloy, Y stabilizes the long periodicity, while its mechanical properties are further improved due to Zn doping

  5. AA stacking, tribological and electronic properties of double-layer graphene with krypton spacer.

    Science.gov (United States)

    Popov, Andrey M; Lebedeva, Irina V; Knizhnik, Andrey A; Lozovik, Yurii E; Potapkin, Boris V; Poklonski, Nikolai A; Siahlo, Andrei I; Vyrko, Sergey A

    2013-10-21

    Structural, energetic, and tribological characteristics of double-layer graphene with commensurate and incommensurate krypton spacers of nearly monolayer coverage are studied within the van der Waals-corrected density functional theory. It is shown that when the spacer is in the commensurate phase, the graphene layers have the AA stacking. For this phase, the barriers to relative in-plane translational and rotational motion and the shear mode frequency of the graphene layers are calculated. For the incommensurate phase, both of the barriers are found to be negligibly small. A considerable change of tunneling conductance between the graphene layers separated by the commensurate krypton spacer at their relative subangstrom displacement is revealed by the use of the Bardeen method. The possibility of nanoelectromechanical systems based on the studied tribological and electronic properties of the considered heterostructures is discussed.

  6. Sliding behavior of oil droplets on nanosphere stacking layers with different surface textures

    International Nuclear Information System (INIS)

    Hsieh, Chien-Te; Wu, Fang-Lin; Chen, Wei-Yu

    2010-01-01

    Two facile coating techniques, gravitational sediment and spin coating, were applied for the creation of silica sphere stacking layers with different textures onto glass substrates that display various sliding abilities toward liquid drops with different surface tensions, ranged from 25.6 to 72.3 mN/m. The resulting silica surface exhibits oil repellency, long-period durability > 30 days, and oil sliding capability. The two-tier texture offers a better roll-off ability toward liquid drops with a wide range of γ L , ranged from 30.2 to 72.3 mN/m, i.e., when the sliding angle (SA) ad ) appears to describe the sliding behavior within the W ad region: 2.20-3.03 mN/m. The smaller W ad , the easier drop sliding (i.e., the smaller SA value) takes place on the surfaces. The W ad value ∼3.03 mN/m shows a critical kinetic barrier for drop sliding on the silica surfaces from stationary to movement states. This work proposes a mathematical model to simulate the sliding behavior of oil drops on a nanosphere stacking layer, confirming the anti-oil contamination capability.

  7. Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

    2015-05-20

    In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

  8. Solid-state dewetting of Au-Ni bi-layer films mediated through individual layer thickness and stacking sequence

    Science.gov (United States)

    Herz, Andreas; Theska, Felix; Rossberg, Diana; Kups, Thomas; Wang, Dong; Schaaf, Peter

    2018-06-01

    In the present work, the solid-state dewetting of Au-Ni bi-layer thin films deposited on SiO2/Si is systematically studied with respect to individual layer thickness and stacking sequence. For this purpose, a rapid heat treatment at medium temperatures is applied in order to examine void formation at the early stages of the dewetting. Compositional variations are realized by changing the thickness ratio of the bi-layer films, while the total thickness is maintained at 20 nm throughout the study. In the event of Au/Ni films annealed at 500 °C, crystal voids exposing the substrate are missing regardless of chemical composition. In reverse order, the number of voids per unit area in two-phase Au-Ni thin films is found to be governed by the amount of Au-rich material. At higher temperatures up to 650 °C, a decreased probability of nucleation comes at the expense of a major portion of cavities, resulting in the formation of bubbles in 15 nm Ni/5 nm Au bi-layers. Film buckling predominantly occurred at phase boundaries crossing the bubbles.

  9. Influences of Stacking Architectures of TiO2 Nanoparticle Layers on Characteristics of Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Chih-Hung Tsai

    2013-01-01

    Full Text Available We investigated the influences of stacking architectures of the TiO2 nanoparticle layers on characteristics and performances of DSSCs. TiO2 nanoparticles of different sizes and compositions were characterized for their morphological and optical/scattering properties in thin films. They were used to construct different stacking architectures of the TiO2 nanoparticle layers for use as working electrodes of DSSCs. Characteristics and performances of DSSCs were examined to establish correlation of the stacking architectures of TiO2 nanoparticle layers with characteristics of DSSCs. The results suggest that the three-layer DSSC architecture, with sandwiching a 20 nm TiO2 nanoparticle layer between a 37 nm TiO2 nanoparticle layer and a hundred nm sized TiO2 back scattering/reflection layer, is effective in enhancing DSSC efficiencies. The high-total-transmittance 37 nm TiO2 nanoparticle layer with a larger haze can serve as an effective front scattering layer to scatter a portion of the incident light into larger oblique angles and therefore increase optical paths and absorption.

  10. Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Lamagna, Luca; Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (MI) (Italy); Dipartimento di Scienza dei Materiali, Universita di Milano Bicocca, Milano (Italy); Brammertz, Guy; Meuris, Marc [IMEC, 75 Kapeldreef, B-3001 Leuven (Belgium)

    2010-01-01

    Capping III-V compound surfaces with Ge ultra-thin layer might be a viable pathway to passivate the electrically active interface traps which usually jeopardize the integration of III-V materials in metal-oxide-semiconductor devices. As the physical nature of such traps is intrinsically related to the chemical details of the interface composition, the structural and compositional features of the Ge/GaAs interface were thoroughly investigated in two different configurations, the atomic layer deposition of La-doped ZrO{sub 2} films on Ge-capped GaAs and the ultra-high vacuum based molecular beam deposition of GeO{sub 2}/Ge double stack on in situ prepared GaAs. In the former case, the intercalation of a Ge interface layer is shown to suppress the concentration of interface Ga-O, As-O and elemental As bonding which were significantly detected in case of the direct oxide deposition on GaAs. In the latter case, the incidence of two different in situ surface preparations, the Ar sputtering and the atomic H cleaning, on the interface composition is elucidated and the beneficial role played by the atomic H exposure in reducing the semiconductor-oxygen bonds at the interface level is demonstrated.

  11. Stacking layered structure of polymer light emitting diodes prepared by evaporative spray deposition using ultradilute solution for improving carrier balance

    International Nuclear Information System (INIS)

    Aoki, Youichi; Shakutsui, Masato; Fujita, Katsuhiko

    2009-01-01

    Polymer light-emitting diodes (PLEDs) with staking layered structures are prepared by the evaporative spray deposition using ultradilute solution (ESDUS) method, which has enabled forming a polymer layer onto another polymer layer even if both polymers are soluble in a solvent used for the preparation. By this method, polymers having various HOMO and LUMO levels can be stacked as a hole transport layer, an emitting layer and an electron transport layer as commonly employed in small molecule-based organic light emitting diodes. Here we demonstrated that a PLED having a tri-layer structure using three kinds of polymers showed significant improvement in quantum efficiency compared with those having a single or bi-layer structure of corresponding polymers.

  12. Analysis of chemical bond states and electrical properties of stacked AlON/HfO{sub 2} gate oxides formed by using a layer-by-layer technique

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Wonjoon; Lee, Jonghyun; Yang, Jungyup; Kim, Chaeok; Hong, Jinpyo; Nahm, Tschanguh; Byun, Byungsub; Kim, Moseok [Hanyang University, Seoul (Korea, Republic of)

    2006-06-15

    Stacked AlON/HfO{sub 2} thin films for gate oxides in metal-oxide-semiconductor devices are successfully prepared on Si substrates by utilizing a layer-by-layer technique integrated with an off-axis RF remote plasma sputtering process at room temperature. This off-axis structure is designed to improve the uniformity and the quality of gate oxide films. Also, a layer-by-layer technique is used to control the interface layer between the gate oxide and the Si substrate. The electrical properties of our stacked films are characterized by using capacitance versus voltage and leakage current versus voltage measurements. The stacked AlON/HfO{sub 2} gate oxide exhibits a low leakage current of about 10{sup -6} A/cm{sup 2} and a high dielectric constant value of 14.26 by effectively suppressing the interface layer between gate oxide and Si substrate. In addition, the chemical bond states and the optimum thickness of each AlON and HfO{sub 2} thin film are analyzed using X-ray photoemission spectroscopy and transmission electron microscopy measurement.

  13. Image transfer by cascaded stack of photonic crystal and air layers

    NARCIS (Netherlands)

    Shen, C.; Michielsen, K.; Raedt, H. De

    2006-01-01

    We demonstrate image transfer by a cascaded stack consisting of two and three triangular-lattice photonic crystal slabs separated by air. The quality of the image transfered by the stack is sensitive to the air/photonic crystal interface termination and the frequency. Depending on the frequency and

  14. Nature of Interlayer Binding and Stacking of sp–sp 2 Hybridized Carbon Layers: A Quantum Monte Carlo Study

    International Nuclear Information System (INIS)

    Shin, Hyeondeok; Lee, Hoonkyung; Heinonen, Olle; Benali, Anouar; Kwon, Yongkyung

    2017-01-01

    α-graphyne is a two-dimensional sheet of sp-sp2 hybridized carbon atoms in a honeycomb lattice. While the geometrical structure is similar to that of graphene, the hybridized triple bonds give rise to electronic structure that is different from that of graphene. Similar to graphene, α-graphyne can be stacked in bilayers with two stable configurations, but the different stackings have very different electronic structures: one is predicted to have gapless parabolic bands and the other a tunable bandgap which is attractive for applications. In order to realize applications, it is crucial to understand which stacking is more stable. This is difficult to model, as the stability is a result of weak interlayer van der Waals interactions which are not well captured by density functional theory (DFT). We have used quantum Monte Carlo simulations that accurately include van der Waals interactions to calculate the interlayer binding energy of bilayer graphyne and to determine its most stable stacking mode. Our results show that inter-layer bindings of sp- and sp2-bonded carbon networks are significantly underestimated in a Kohn-Sham DFT approach, even with an exchange-correlation potential corrected to include, in some approximation, van der Waals interactions. Finally, our quantum Monte Carlo calculations reveal that the interlayer binding energy difference between the two stacking modes is only 0.9(4) eV/atom. From this we conclude that the two stable stacking modes of bilayer α-graphyne are almost degenerate with each other, and both will occur with about the same probability at room temperature unless there is a synthesis path that prefers one stacking over the other.

  15. Stability and performance improvement of a polymer electrolyte membrane fuel cell stack by laser perforation of gas diffusion layers

    Energy Technology Data Exchange (ETDEWEB)

    Gerteisen, Dietmar; Sadeler, Christian [Fraunhofer Institute for Solar Energy Systems ISE, Department of Energy Technology, Heidenhofstrasse 2, 79110 Freiburg (Germany)

    2010-08-15

    The performance and stability of a hydrogen-driven polymer electrolyte membrane fuel cell stack (6-cell PEFC stack) are investigated with regard to pore flooding within the gas diffusion layers (GDLs). Two short stacks with various GDLs (Toray TGP-H-060 untreated and laser-perforated) were characterized at different operating conditions by several characterization techniques such as constant current load, polarization curve, chronoamperometry and chronovoltammetry. The experimental results reveal that the perforation of the cathode GDLs improves the water transport in the porous media and thus the performance as well as the stability of the operating stack in medium and high current density range. A reduced pore flooding is verified when using the customized laser-perforated GDLs. The GDL perforation has a huge potential to balance the inhomogeneous in-plane saturation conditions between the inlet and outlet area of the cell and to compensate to a certain degree the effects of temperature distribution within a stack regarding the water management. (author)

  16. Stability and performance improvement of a polymer electrolyte membrane fuel cell stack by laser perforation of gas diffusion layers

    Science.gov (United States)

    Gerteisen, Dietmar; Sadeler, Christian

    The performance and stability of a hydrogen-driven polymer electrolyte membrane fuel cell stack (6-cell PEFC stack) are investigated with regard to pore flooding within the gas diffusion layers (GDLs). Two short stacks with various GDLs (Toray TGP-H-060 untreated and laser-perforated) were characterized at different operating conditions by several characterization techniques such as constant current load, polarization curve, chronoamperometry and chronovoltammetry. The experimental results reveal that the perforation of the cathode GDLs improves the water transport in the porous media and thus the performance as well as the stability of the operating stack in medium and high current density range. A reduced pore flooding is verified when using the customized laser-perforated GDLs. The GDL perforation has a huge potential to balance the inhomogeneous in-plane saturation conditions between the inlet and outlet area of the cell and to compensate to a certain degree the effects of temperature distribution within a stack regarding the water management.

  17. Two stacked tandem white organic light-emitting diodes employing WO3 as a charge generation layer

    Science.gov (United States)

    Bin, Jong-Kwan; Lee, Na Yeon; Lee, SeungJae; Seo, Bomin; Yang, JoongHwan; Kim, Jinook; Yoon, Soo Young; Kang, InByeong

    2016-09-01

    Recently, many studies have been conducted to improve the electroluminescence (EL) performance of organic lightemitting diodes (OLEDs) by using appropriate organic or inorganic materials as charge generation layer (CGL) for their application such as full color displays, backlight units, and general lighting source. In a stacked tandem white organic light-emitting diodes (WOLEDs), a few emitting units are electrically interconnected by a CGL, which plays the role of generating charge carriers, and then facilitate the injection of it into adjacent emitting units. In the present study, twostacked WOLEDs were fabricated by using tungsten oxide (WO3) as inorganic charge generation layer and 1,4,5,8,9,11- hexaazatriphenylene hexacarbonitrile (HAT-CN) as organic charge generation layer (P-CGL). Organic P-CGL materials were used due to their ease of use in OLED fabrication as compared to their inorganic counterparts. To obtain high efficiency, we demonstrate two-stacked tandem WOLEDs as follows: ITO/HIL/HTL/HTL'/B-EML/ETL/N-CGL/P-CGL (WO3 or HAT-CN)/HTL″/YG-EML/ETL/LiF/Al. The tandem devices with blue- and yellow-green emitting layers were sensitive to the thickness of an adjacent layer, hole transporting layer for the YG emitting layer. The WOLEDs containing the WO3 as charge generation layer reach a higher power efficiency of 19.1 lm/W and the current efficiency of 51.2 cd/A with the white color coordinate of (0.316, 0.318) than the power efficiency of 13.9 lm/W, and the current efficiency of 43.7 cd/A for organic CGL, HAT-CN at 10 mA/cm2, respectively. This performance with inserting WO3 as CGL exhibited the highest performance with excellent CIE color coordinates in the two-stacked tandem OLEDs.

  18. Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

    Science.gov (United States)

    Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

    2018-06-01

    In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

  19. Dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Bhartiya, S. [Laser Materials Development & Devices Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Gupta, M. [UGC-DAE Consortium for Scientific Research, Indore 452 017 (India)

    2016-01-25

    We report on the dimensional crossover of electron weak localization in ZnO/TiO{sub x} stacked layers having well-defined and spatially-localized Ti dopant profiles along film thickness. These films were grown by in situ incorporation of sub-monolayer TiO{sub x} on the growing ZnO film surface and subsequent overgrowth of thin conducting ZnO spacer layer using atomic layer deposition. Film thickness was varied in the range of ∼6–65 nm by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers of nearly identical dopant-profiles. The evolution of zero-field sheet resistance (R{sub ◻}) versus temperature with decreasing film thickness showed a metal to insulator transition. On the metallic side of the metal-insulator transition, R{sub ◻}(T) and magnetoresistance data were found to be well corroborated with the theoretical framework of electron weak localization in the diffusive transport regime. The temperature dependence of both R{sub ◻} and inelastic scattering length provided strong evidence for a smooth crossover from 2D to 3D weak localization behaviour. Results of this study provide deeper insight into the electron transport in low-dimensional n-type ZnO/TiO{sub x} stacked layers which have potential applications in the field of transparent oxide electronics.

  20. High-order study of the quantum critical behavior of a frustrated spin-1/2 antiferromagnet on a stacked honeycomb bilayer

    Science.gov (United States)

    Bishop, R. F.; Li, P. H. Y.

    2017-12-01

    We study a frustrated spin-1/2 J1-J2-J3-J1⊥ Heisenberg antiferromagnet on an A A -stacked bilayer honeycomb lattice. In each layer we consider nearest-neighbor (NN), next-nearest-neighbor, and next-next-nearest-neighbor antiferromagnetic (AFM) exchange couplings J1,J2 , and J3, respectively. The two layers are coupled with an AFM NN exchange coupling J1⊥≡δ J1 . The model is studied for arbitrary values of δ along the line J3=J2≡α J1 that includes the most highly frustrated point at α =1/2 , where the classical ground state is macroscopically degenerate. The coupled cluster method is used at high orders of approximation to calculate the magnetic order parameter and the triplet spin gap. We are thereby able to give an accurate description of the quantum phase diagram of the model in the α δ plane in the window 0 ≤α ≤1 ,0 ≤δ ≤1 . This includes two AFM phases with Néel and striped order, and an intermediate gapped paramagnetic phase that exhibits various forms of valence-bond crystalline order. We obtain accurate estimations of the two phase boundaries, δ =δci(α) , or equivalently, α =αc i(δ ) , with i =1 (Néel) and 2 (striped). The two boundaries exhibit an "avoided crossing" behavior with both curves being re-entrant. Thus, in this α δ window, Néel order exists only for values of δ in the range δc1 (α ) , with δc1 0 for αc 1(0 ) ≈0.49 (1 ) , and striped order similarly exists only for values of δ in the range δc2 (α ) , with δc2 αc2(0) ≈0.600 (5 ) and δc2 0 for αc 2(0 ) >α >α2<≈0.56 (1 ) .

  1. Reducing the layer number of AB stacked multilayer graphene grown on nickel by annealing at low temperature.

    Science.gov (United States)

    Velasco, J Marquez; Giamini, S A; Kelaidis, N; Tsipas, P; Tsoutsou, D; Kordas, G; Raptis, Y S; Boukos, N; Dimoulas, A

    2015-10-09

    Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 °C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 °C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.

  2. Birnessite-type MnO2 nanosheets with layered structures under high pressure: elimination of crystalline stacking faults and oriented laminar assembly.

    Science.gov (United States)

    Sun, Yugang; Wang, Lin; Liu, Yuzi; Ren, Yang

    2015-01-21

    Squeezing out crystalline stacking faults: Birnessite-type δ-phase MnO2 microflowers containing interconnected ultrathin nanosheets are synthesized through a microwave-assisted hydrothermal process and exhibit a layered crystalline structure with significant stacking faults. Compressing these MnO2 nanosheets in a diamond anvil cell with high pressure up to tens of GPa effectively eliminates the crystalline stacking faults. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Program scheme using common source lines in channel stacked NAND flash memory with layer selection by multilevel operation

    Science.gov (United States)

    Kim, Do-Bin; Kwon, Dae Woong; Kim, Seunghyun; Lee, Sang-Ho; Park, Byung-Gook

    2018-02-01

    To obtain high channel boosting potential and reduce a program disturbance in channel stacked NAND flash memory with layer selection by multilevel (LSM) operation, a new program scheme using boosted common source line (CSL) is proposed. The proposed scheme can be achieved by applying proper bias to each layer through its own CSL. Technology computer-aided design (TCAD) simulations are performed to verify the validity of the new method in LSM. Through TCAD simulation, it is revealed that the program disturbance characteristics is effectively improved by the proposed scheme.

  4. Ta thickness-dependent perpendicular magnetic anisotropy features in Ta/CoFeB/MgO/W free layer stacks

    Energy Technology Data Exchange (ETDEWEB)

    Yang, SeungMo; Lee, JaBin; An, GwangGuk [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, JaeHong [Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, WooSeong [Nano Quantum Electronics Lab, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, JinPyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-07-31

    We describe Ta underlayer thickness influence on thermal stability of perpendicular magnetic anisotropy in Ta/CoFeB/MgO/W stacks. It is believed that thermal stability based on Ta underlay is associated with thermally-activated Ta atom diffusion during annealing. The difference in Ta thickness-dependent diffusion behaviors was confirmed with X-ray photoelectron spectroscopy analysis. Along with a feasible Ta thickness model, our observations suggest that an appropriate seed layer choice is needed for high temperature annealing stability, a critical issue in the memory industry. - Highlights: • We observed changes in the diffusion behavior with regard to Ta seed layer thickness. • It was observed that a thinner Ta seed layer induced more annealing-stable features. • However, ultra-thin (0.75 nm) Ta shows unstable characteristics about the annealing process. • It was possibly due to a rugged interface of the Ta layer by the island growth process.

  5. Effect of the number of stacking layers on the characteristics of quantum-dash lasers

    KAUST Repository

    Khan, Mohammed Zahed Mustafa; Bhattacharya, Pallab K.; Ng, Tien Khee; Ooi, Boon S.; Schwingenschlö gl, Udo

    2011-01-01

    A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region.

  6. Effect of the number of stacking layers on the characteristics of quantum-dash lasers

    KAUST Repository

    Khan, Mohammed Zahed Mustafa

    2011-06-27

    A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region.

  7. Optimum stacking sequence design of laminated composite circular plates with curvilinear fibres by a layer-wise optimization method

    Science.gov (United States)

    Guenanou, A.; Houmat, A.

    2018-05-01

    The optimum stacking sequence design for the maximum fundamental frequency of symmetrically laminated composite circular plates with curvilinear fibres is investigated for the first time using a layer-wise optimization method. The design variables are two fibre orientation angles per layer. The fibre paths are constructed using the method of shifted paths. The first-order shear deformation plate theory and a curved square p-element are used to calculate the objective function. The blending function method is used to model accurately the geometry of the circular plate. The equations of motion are derived using Lagrange's method. The numerical results are validated by means of a convergence test and comparison with published values for symmetrically laminated composite circular plates with rectilinear fibres. The material parameters, boundary conditions, number of layers and thickness are shown to influence the optimum solutions to different extents. The results should serve as a benchmark for optimum stacking sequences of symmetrically laminated composite circular plates with curvilinear fibres.

  8. Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties

    International Nuclear Information System (INIS)

    Dos Santos, Renato B; Mota, F de Brito; Rivelino, R; Kakanakova-Georgieva, A; Gueorguiev, G K

    2016-01-01

    Graphite-like hexagonal AlN (h-AlN) multilayers have been experimentally manifested and theoretically modeled. The development of any functional electronics applications of h-AlN would most certainly require its integration with other layered materials, particularly graphene. Here, by employing vdW-corrected density functional theory calculations, we investigate structure, interaction energy, and electronic properties of van der Waals stacking sequences of few-layer h-AlN with graphene. We find that the presence of a template such as graphene induces enough interlayer charge separation in h-AlN, favoring a graphite-like stacking formation. We also find that the interface dipole, calculated per unit cell of the stacks, tends to increase with the number of stacked layers of h-AlN and graphene. (paper)

  9. CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Khalil, M.I., E-mail: mdibrahim.khalil@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Atici, O. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy); Lucotti, A. [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Binetti, S.; Le Donne, A. [Department of Materials Science and Solar Energy Research Centre (MIB-SOLAR), University of Milano- Bicocca, Via Cozzi 53, 20125 Milano (Italy); Magagnin, L., E-mail: luca.magagnin@polimi.it [Dipartimento di Chimica, Materiali e Ing. Chimica “Giulio Natta”, Politecnico di Milano, Via Mancinelli 7, 20131 Milano (Italy)

    2016-08-30

    Highlights: • CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn). • Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also. • Two different excitation wavelengths of laser lines (514.5 and 785 nm) have been used for the Raman characterization of the films. • No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors. • Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15 eV at low temperature (15 K). - Abstract: In the present work, Kesterite-Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350 °C for 20 min in flowing N{sub 2} atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585 °C for 15 min in elemental sulfur environment in a quartz tube furnace with N{sub 2} atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785 nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose

  10. Investigation of stacked elemental layers for Cu(In,Ga)Se{sub 2} thin film preparation by rapid thermal selenization

    Energy Technology Data Exchange (ETDEWEB)

    Stroth, Christiane; Ohland, Joerg; Mikolajczak, Ulf; Madena, Thomas; Keller, Jan; Parisi, Juergen; Hammer, Maria; Riedel, Ingo [Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg, 26111 Oldenburg (Germany)

    2013-07-01

    Rapid thermal selenization of pure metallic (Cu-In-Ga) or selenium-containing (Cu-In-Ga-Se) precursors is a favorable method to fabricate Cu(In,Ga)Se{sub 2} absorber films for application in thin film solar cells. Because of its upscaling potential and the short process time it is a promising approach for the fabrication of CIGSe photovoltaic modules on industrial scale. As a preliminary work for prospective plasma-enhanced selenization of stacked elemental layers (SEL) the elements copper, indium and gallium were sequentially deposited on molybdenum coated soda-lime glass by thermal evaporation. The stacking order was varied and the precursors were annealed with different heating rates. Morphology, elemental depth distribution and phases of the layers were investigated before and after annealing using scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction. Furthermore the influence of different heating rates on phase transitions during annealing was studied by in-situ X-ray diffraction.

  11. Continuum-Scale Modeling of Liquid Redistribution in a Stack of Thin Hydrophilic Fibrous Layers

    NARCIS (Netherlands)

    Tavangarrad, A.H.; Mohebbi, Behzad; Hassanizadeh, S.M.|info:eu-repo/dai/nl/074974424; Rosati, Rodrigo; Claussen, Jan; Blümich, Bernhard

    Macroscale three-dimensional modeling of fluid flow in a thin porous layer under unsaturated conditions is a challenging task. One major issue is that such layers do not satisfy the representative elementary volume length-scale requirement. Recently, a new approach, called reduced continua model

  12. Electrical characterization of 4H-SiC metal-oxide-semiconductor structure with Al2O3 stacking layers as dielectric

    Science.gov (United States)

    Chang, P. K.; Hwu, J. G.

    2018-02-01

    Interface defects and oxide bulk traps conventionally play important roles in the electrical performance of SiC MOS device. Introducing the Al2O3 stack grown by repeated anodization of Al films can notably lower the leakage current in comparison to the SiO2 structure, and enhance the minority carrier response at low frequency when the number of Al2O3 layers increase. In addition, the interface quality is not deteriorated by the stacking of Al2O3 layers because the stacked Al2O3 structure grown by anodization possesses good uniformity. In this work, the capacitance equivalent thickness (CET) of stacking Al2O3 will be up to 19.5 nm and the oxidation process can be carried out at room temperature. For the Al2O3 gate stack with CET 19.5 nm on n-SiC substrate, the leakage current at 2 V is 2.76 × 10-10 A/cm2, the interface trap density at the flatband voltage is 3.01 × 1011 eV-1 cm-2, and the effective breakdown field is 11.8 MV/cm. Frequency dispersion and breakdown characteristics may thus be improved as a result of the reduction in trap density. The Al2O3 stacking layers are capable of maintaining the leakage current as low as possible even after constant voltage stress test, which will further ameliorate reliability characteristics.

  13. Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-03-09

    It is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.

  14. Formation and Characterization of Stacked Nanoscale Layers of Polymers and Silanes on Silicon Surfaces

    Science.gov (United States)

    Ochoa, Rosie; Davis, Brian; Conley, Hiram; Hurd, Katie; Linford, Matthew R.; Davis, Robert C.

    2008-10-01

    Chemical surface patterning at the nanoscale is a critical component of chemically directed assembly of nanoscale devices or sensitive biological molecules onto surfaces. Complete and consistent formation of nanoscale layers of silanes and polymers is a necessary first step for chemical patterning. We explored methods of silanizing silicon substrates for the purpose of functionalizing the surfaces. The chemical functionalization, stability, flatness, and repeatability of the process was characterized by use of ellipsometry, water contact angle, and Atomic Force Microscopy (AFM). We found that forming the highest quality functionalized surfaces was accomplished through use of chemical vapor deposition (CVD). Specifically, surfaces were plasma cleaned and hydrolyzed before the silane was applied. A polymer layer less then 2 nm in thickness was electrostatically bound to the silane layer. The chemical functionalization, stability, flatness, and repeatability of the process was also characterized for the polymer layer using ellipsometry, water contact angle, and AFM.

  15. AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

    International Nuclear Information System (INIS)

    Kordatos, Apostolis; Kelaidis, Nikolaos; Giamini, Sigiava Aminalragia; Marquez-Velasco, Jose; Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios

    2016-01-01

    Highlights: • Growth of non-defective few layer graphene on Rh(1 1 1) substrates using an ambient- pressure CVD method. • Control of graphene stacking order via the cool-down rate. • Graphene is grown with a mainly AB-stacking geometry on single-crystalline Rhodium for a slow cool-down rate and non-AB for a very fast cool-down. • Good epitaxial orientation of the surface is presented through the RHEED data and confirmed with ARPES characterization for the lower cool-down rate, where graphene's ΓK direction a perfectly aligned with the ΓK direction of the Rh(1 1 1) single crystal. - Abstract: Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

  16. AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(1 1 1) and electronic structure characterization

    Energy Technology Data Exchange (ETDEWEB)

    Kordatos, Apostolis [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); Kelaidis, Nikolaos, E-mail: n.kelaidis@inn.demokritos.gr [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); Giamini, Sigiava Aminalragia [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); University of Athens, Department of Physics, Section of Solid State Physics, Athens, 15684 Greece (Greece); Marquez-Velasco, Jose [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece); National Technical University of Athens, Department of Physics, Athens, 15784 Greece (Greece); Xenogiannopoulou, Evangelia; Tsipas, Polychronis; Kordas, George; Dimoulas, Athanasios [National Center for Scientific Research “Demokritos”, Athens, 15310 (Greece)

    2016-04-30

    Highlights: • Growth of non-defective few layer graphene on Rh(1 1 1) substrates using an ambient- pressure CVD method. • Control of graphene stacking order via the cool-down rate. • Graphene is grown with a mainly AB-stacking geometry on single-crystalline Rhodium for a slow cool-down rate and non-AB for a very fast cool-down. • Good epitaxial orientation of the surface is presented through the RHEED data and confirmed with ARPES characterization for the lower cool-down rate, where graphene's ΓK direction a perfectly aligned with the ΓK direction of the Rh(1 1 1) single crystal. - Abstract: Graphene synthesis on single crystal Rh(1 1 1) catalytic substrates is performed by Chemical Vapor Deposition (CVD) at 1000 °C and atmospheric pressure. Raman analysis shows full substrate coverage with few layer graphene. It is found that the cool-down rate strongly affects the graphene stacking order. When lowered, the percentage of AB (Bernal) -stacked regions increases, leading to an almost full AB stacking order. When increased, the percentage of AB-stacked graphene regions decreases to a point where almost a full non AB-stacked graphene is grown. For a slow cool-down rate, graphene with AB stacking order and good epitaxial orientation with the substrate is achieved. This is indicated mainly by Raman characterization and confirmed by Reflection high-energy electron diffraction (RHEED) imaging. Additional Scanning Tunneling Microscopy (STM) topography data confirm that the grown graphene is mainly an AB-stacked structure. The electronic structure of the graphene/Rh(1 1 1) system is examined by Angle resolved Photo-Emission Spectroscopy (ARPES), where σ and π bands of graphene, are observed. Graphene's ΓK direction is aligned with the ΓK direction of the substrate, indicating no significant contribution from rotated domains.

  17. Effect of layer number and layer stacking registry on the formation and quantification of defects in graphene

    Czech Academy of Sciences Publication Activity Database

    da Costa, Sara; Ek Weis, Johan; Frank, Otakar; Kalbáč, Martin

    2016-01-01

    Roč. 98, MAR 2016 (2016), s. 592-598 ISSN 0008-6223 R&D Projects: GA MŠk LH13022 Institutional support: RVO:61388955 Keywords : Multi-layered graphene * Applied research * Plasma applications Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 6.337, year: 2016

  18. Improved speed and data retention characteristics in flash memory using a stacked HfO2/Ta2O5 charge-trapping layer

    International Nuclear Information System (INIS)

    Zheng, Zhiwei; Huo, Zongliang; Zhang, Manhong; Zhu, Chenxin; Liu, Jing; Liu, Ming

    2011-01-01

    This paper reports the simultaneous improvements in erase speed and data retention characteristics in flash memory using a stacked HfO 2 /Ta 2 O 5 charge-trapping layer. In comparison to a memory capacitor with a single HfO 2 trapping layer, the erase speed of a memory capacitor with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer is 100 times faster and its memory window is enlarged from 2.7 to 4.8 V for the same ±16 V sweeping voltage range. With the same initial window of ΔV FB = 4 V, the device with a stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a 3.5 V extrapolated 10-year retention window, while the control device with a single HfO 2 trapping layer has only 2.5 V for the extrapolated 10-year window. The present results demonstrate that the device with the stacked HfO 2 /Ta 2 O 5 charge-trapping layer has a strong potential for future high-performance nonvolatile memory application

  19. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-01

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

  20. Margin estimation and disturbances of irradiation field in layer-stacking carbon-ion beams for respiratory moving targets.

    Science.gov (United States)

    Tajiri, Shinya; Tashiro, Mutsumi; Mizukami, Tomohiro; Tsukishima, Chihiro; Torikoshi, Masami; Kanai, Tatsuaki

    2017-11-01

    Carbon-ion therapy by layer-stacking irradiation for static targets has been practised in clinical treatments. In order to apply this technique to a moving target, disturbances of carbon-ion dose distributions due to respiratory motion have been studied based on the measurement using a respiratory motion phantom, and the margin estimation given by the square root of the summation Internal margin2+Setup margin2 has been assessed. We assessed the volume in which the variation in the ratio of the dose for a target moving due to respiration relative to the dose for a static target was within 5%. The margins were insufficient for use with layer-stacking irradiation of a moving target, and an additional margin was required. The lateral movement of a target converts to the range variation, as the thickness of the range compensator changes with the movement of the target. Although the additional margin changes according to the shape of the ridge filter, dose uniformity of 5% can be achieved for a spherical target 93 mm in diameter when the upward range variation is limited to 5 mm and the additional margin of 2.5 mm is applied in case of our ridge filter. Dose uniformity in a clinical target largely depends on the shape of the mini-peak as well as on the bolus shape. We have shown the relationship between range variation and dose uniformity. In actual therapy, the upper limit of target movement should be considered by assessing the bolus shape. © The Author 2017. Published by Oxford University Press on behalf of The Japan Radiation Research Society and Japanese Society for Radiation Oncology.

  1. Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

    Energy Technology Data Exchange (ETDEWEB)

    Rout, G. C., E-mail: siva1987@iopb.res.in, E-mail: skp@iopb.res.in, E-mail: gcr@iopb.res.in [Physics Enclave, Plot No-664/4825, Lane-4A, Shree Vihar, Bhubaneswar-751031, Odisha (India); Sahu, Sivabrata [School of Applied Sciences (Physics), KIIT University, Bhubaneswar-751024, Odisha (India); Panda, S. K. [K.D. Science College, Pochilima, Hinjilicut,Pin-761101 Ganjam, Orissa (India)

    2016-04-13

    We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green’s functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green’s function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution of the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).

  2. Effect of impurity doping on tunneling conductance in AB-stacked bi-layer graphene: A tight-binding study

    International Nuclear Information System (INIS)

    Rout, G. C.; Sahu, Sivabrata; Panda, S. K.

    2016-01-01

    We report here a microscopic tight-binding model calculation for AB-stacked bilayer graphene in presence of biasing potential between the two layers and the impurity effects to study the evolution of the total density of states with special emphasis on opening of band gap near Dirac point. We have calculated the electron Green’s functions for both the A and B sub-lattices by Zubarev technique. The imaginary part of the Green’s function gives the partial and total density of states of electrons. The density of states are computed numerically for 1000 × 1000 grid points of the electron momentum. The evolution of the opening of band gap near van-Hove singularities as well as near Dirac point is investigated by varying the different interlayer hoppings and the biasing potentials. The inter layer hopping splits the density of states at van-Hove singularities and produces a V-shaped gap near Dirac point. Further the biasing potential introduces a U shaped gap near Dirac point with a density minimum at the applied potential(i.e. at V/2).

  3. Structure of fault stackings of molecular layers X-M-X in CdI2 polytypic crystals

    International Nuclear Information System (INIS)

    Palosz, B.; Przedmojski, J.

    1984-01-01

    The arrangements of molecular layers I-Cd-I, which may be regarded as 'faulted' for CdI 2 polytypic crystals, are analyzed. Tentative classification of faults into those which are intermediate structure between the basic polytypes 2H and 4H and faults occurring between different blocks of pure structure 4 H is proposed. The connection between some growth parameters and the structure of faults in CdI 2 crystals grown from solutions is discussed. It is shown that the geometrical classification of stacking faults used for layered inorganic crystals is not appropriate for the description of the faults existing in polytypic crystals of MX 2 type. The effect of weak external electric and magnetic fields on the polytypic structure of CdI 2 is analyzed. The experiments performed for several hundred of polytypes of CdI 2 showed that the external fields may, in some conditions, affect the organization of the polytypic structure of crystals very strongly. In particular, it was found that the external fields may change the period of polytype cells and that the relative number of hexagonal and rhombohedral polytypes differ very strongly for crystals grown in the absence and in the presence of external electric and magnetic fields. (author)

  4. Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

    Science.gov (United States)

    Bhuyian, M. N.; Sengupta, R.; Vurikiti, P.; Misra, D.

    2016-05-01

    This work evaluates the defects in high quality atomic layer deposited (ALD) HfAlOx with extremely low Al (estimated by the high temperature current voltage measurement shows that the charged oxygen vacancies, V+/V2+, are the primary source of defects in these dielectrics. When Al is added in HfO2, the V+ type defects with a defect activation energy of Ea ˜ 0.2 eV modify to V2+ type to Ea ˜ 0.1 eV with reference to the Si conduction band. When devices were stressed in the gate injection mode for 1000 s, more V+ type defects are generated and Ea reverts back to ˜0.2 eV. Since Al has a less number of valence electrons than do Hf, the change in the co-ordination number due to Al incorporation seems to contribute to the defect level modifications. Additionally, the stress induced leakage current behavior observed at 20 °C and at 125 °C demonstrates that the addition of Al in HfO2 contributed to suppressed trap generation process. This further supports the defect engineering model as reduced flat-band voltage shifts were observed at 20 °C and at 125 °C.

  5. Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

    International Nuclear Information System (INIS)

    Salman, S.; Folliot, H.; Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoën, C.; Bertru, N.; Labbé, C.; Letoublon, A.; Le Corre, A.

    2012-01-01

    Highlights: ► The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

  6. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    Science.gov (United States)

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  7. UV light induced insulator-metal transition in ultra-thin ZnO/TiO{sub x} stacked layer grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2016-08-28

    In the present study, atomic layer deposition has been used to grow a series of Ti incorporated ZnO thin films by vertically stacking different numbers (n = 1–7) of ZnO/TiO{sub x} layers on (0001) sapphire substrates. The effects of defect states mediated chemisorption of O{sub 2} and/OH groups on the electrical properties of these films have been investigated by illuminating the samples under UV light inside a high vacuum optical cryostat. The ultra-thin film having one stacked layer (n = 1) did not show any change in its electrical resistance upon UV light exposure. On the contrary, marginal drop in the electrical resistivity was measured for the samples with n ≥ 3. Most surprisingly, the sample with n = 2 (thickness ∼ 12 nm) showed an insulator to metal transition upon UV light exposure. The temperature dependent electrical resistivity measurement on the as grown film (n = 2) showed insulating behaviour, i.e., diverging resistivity on extrapolation to T→ 0 K. However, upon UV light exposure, it transformed to a metallic state, i.e., finite resistivity at T → 0 K. Such an insulator-metal transition plausibly arises due to the de-trapping of conduction electrons from the surface defect sites which resulted in an upward shift of the Fermi level above the mobility edge. The low-temperature electron transport properties on the insulating film (n = 2) were investigated by a combined study of zero field electrical resistivity ρ(T) and magnetoresistance (MR) measurements. The observed negative MR was found to be in good agreement with the magnetic field induced suppression of quantum interference between forward-going paths of tunnelling electrons. Both ρ(T) and MR measurements provided strong evidence for the Efros-Shklovskii type variable range hopping conduction in the low-temperature (≤40 K) regime. Such studies on electron transport in ultra-thin n-type doped ZnO films are crucial to achieve optimum functionality

  8. Eigenstates of complex linear combinations of J1, J2, J3 for any representation of SU(2)

    International Nuclear Information System (INIS)

    Bacry, H.; Technion-Israel Inst. of Tech., Haifa. Dept. of Physics)

    1977-05-01

    The states which minimalize the uncertainty relation ΔJ 1 ΔJ 2 >=1/2/ 3 >/ are eigenstates of complex linear combinations of J 1 and J 2 . This kind of states is shown to have a very simple geometrical interpretation in the constellation formalism. A detailed description is given in the present pap

  9. Spiral correlations in frustrated one-dimensional spin-1/2 Heisenberg J1-J2-J3 ferromagnets

    International Nuclear Information System (INIS)

    Zinke, R; Richter, J; Drechsler, S-L

    2010-01-01

    We use the coupled cluster method for infinite chains complemented by exact diagonalization of finite periodic chains to discuss the influence of a third-neighbor exchange J 3 on the ground state of the spin- 1/2 Heisenberg chain with ferromagnetic nearest-neighbor interaction J 1 and frustrating antiferromagnetic next-nearest-neighbor interaction J 2 . A third-neighbor exchange J 3 might be relevant to describe the magnetic properties of the quasi-one-dimensional edge-shared cuprates, such as LiVCuO 4 or LiCu 2 O 2 . In particular, we calculate the critical point J 2 c as a function of J 3 , where the ferromagnetic ground state gives way for a ground state with incommensurate spiral correlations. For antiferromagnetic J 3 the ferro-spiral transition is always continuous and the critical values J 2 c of the classical and the quantum model coincide. On the other hand, for ferromagnetic J 3 ∼ 1 | the critical value J 2 c of the quantum model is smaller than that of the classical model. Moreover, the transition becomes discontinuous, i.e. the model exhibits a quantum tricritical point. We also calculate the height of the jump of the spiral pitch angle at the discontinuous ferro-spiral transition.

  10. Ground-state phases of the spin-1 J1-J2 Heisenberg antiferromagnet on the honeycomb lattice

    Science.gov (United States)

    Li, P. H. Y.; Bishop, R. F.

    2016-06-01

    We study the zero-temperature quantum phase diagram of a spin-1 Heisenberg antiferromagnet on the honeycomb lattice with both nearest-neighbor exchange coupling J1>0 and frustrating next-nearest-neighbor coupling J2≡κ J1>0 , using the coupled cluster method implemented to high orders of approximation, and based on model states with different forms of classical magnetic order. For each we calculate directly in the bulk thermodynamic limit both ground-state low-energy parameters (including the energy per spin, magnetic order parameter, spin stiffness coefficient, and zero-field uniform transverse magnetic susceptibility) and their generalized susceptibilities to various forms of valence-bond crystalline (VBC) order, as well as the energy gap to the lowest-lying spin-triplet excitation. In the range 0 κc 2=0.340 (5 ) . Two different paramagnetic phases are found to exist in the intermediate region. Over the range κc1<κ<κci=0.305 (5 ) we find a gapless phase with no discernible magnetic order, which is a strong candidate for being a quantum spin liquid, while over the range κci<κ <κc 2 we find a gapped phase, which is most likely a lattice nematic with staggered dimer VBC order that breaks the lattice rotational symmetry.

  11. Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

    Science.gov (United States)

    Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H; Khondaker, Saiful I; Choi, Wonbong; Jung, Yeonwoong

    2016-05-05

    Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

  12. Short-Range Stacking Disorder in Mixed-Layer Compounds: A HAADF STEM Study of Bastnäsite-Parisite Intergrowths

    Directory of Open Access Journals (Sweden)

    Cristiana L. Ciobanu

    2017-11-01

    Full Text Available Atomic-scale high angle annular dark field scanning transmission electron microscopy (HAADF STEM imaging and electron diffractions are used to address the complexity of lattice-scale intergrowths of REE-fluorocarbonates from an occurrence adjacent to the Olympic Dam deposit, South Australia. The aims are to define the species present within the intergrowths and also assess the value of the HAADF STEM technique in resolving stacking sequences within mixed-layer compounds. Results provide insights into the definition of species and crystal-structural modularity. Lattice-scale intergrowths account for the compositional range between bastnäsite and parasite, as measured by electron probe microanalysis (at the µm-scale throughout the entire area of the intergrowths. These comprise rhythmic intervals of parisite and bastnäsite, or stacking sequences with gradational changes in the slab stacking between B, BBS and BS types (B—bastnäsite, S—synchysite. An additional occurrence of an unnamed B2S phase [CaCe3(CO34F3], up to 11 unit cells in width, is identified among sequences of parisite and bastnäsite within the studied lamellar intergrowths. Both B2S and associated parisite show hexagonal lattices, interpreted as 2H polytypes with c = 28 and 38 Å, respectively. 2H parisite is a new, short hexagonal polytype that can be added to the 14 previously reported polytypes (both hexagonal and rhombohedral for this mineral. The correlation between satellite reflections and the number of layers along the stacking direction (c* can be written empirically as: Nsat = [(m × 2 + (n × 4] − 1 for all BmSn compounds with S ≠ 0. The present study shows intergrowths characterised by short-range stacking disorder and coherent changes in stacking along perpendicular directions. Knowing that the same compositional range can be expressed as long-period stacking compounds in the group, the present intergrowths are interpreted as being related to disequilibrium

  13. Silicon passivation and tunneling contact formation by atomic layer deposited Al2O3/ZnO stacks

    NARCIS (Netherlands)

    Garcia-Alonso Garcia, D.; Smit, S.; Bordihn, S.; Kessels, W.M.M.

    2013-01-01

    The passivation of Si by Al2O3/ZnO stacks, which can serve as passivated tunneling contacts or heterojunctions in silicon photovoltaics, was investigated. It was demonstrated that stacks with Al2O3 thicknesses >3 nm lead to lower surface recombination velocities (Seff,max <4 cm s-1) on n- and p-type

  14. Influence of the stacking sequence of layers on the mechanical behavior of polymeric composite cylinders; Influencia da configuracao de bobinagem no comportamento mecanico de cilindros de composito polimerico

    Energy Technology Data Exchange (ETDEWEB)

    Carvalho, Osni de

    2006-07-01

    This work evaluated experimentally the influence of the stacking sequence of layers symmetrical and asymmetrical on the mechanical behavior of polymeric composite cylinders. For so much, two open-ended cylinders groups were manufactured by filament winding process, which had different stacking sequence related to the laminate midplane, characterizing symmetrical and asymmetrical laminates. The composite cylinders were made with epoxy matrix and carbon fiber as reinforcement. For evaluation of the mechanical strength, the cylinders were tested hydrostatically, which consisted of internal pressurization in a hydrostatic device through the utilization of a fluid until the cylinders burst. Additionally, were compared the strains and failure modes between the cylinders groups. The utilization of a finite element program allowed to conclude that this tool, very used in design, does not get to identify tensions in the fiber direction in each composite layer, as well as interlaminar shear stress, that appears in the cylinders with asymmetrical stacking sequence. The tests results showed that the stacking sequence had influence in the mechanical behavior of the composite cylinders, favoring the symmetrical construction. (author)

  15. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    Science.gov (United States)

    van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

    2017-06-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

  16. Complementary and bipolar regimes of resistive switching in TiN/HfO{sub 2}/TiN stacks grown by atomic-layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Egorov, K.V.; Kirtaev, R.V.; Markeev, A.M.; Zablotskiy, A.V. [Moscow Institute of Physics and Technology, Institutskii per. 9, 141700, Dolgoprudny (Russian Federation); Lebedinskii, Yu.Yu.; Matveyev, Yu.A.; Zenkevich, A.V. [Moscow Institute of Physics and Technology, Institutskii per. 9, 141700, Dolgoprudny (Russian Federation); National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoye shosse 31, 115409, Moscow (Russian Federation); Orlov, O.M. [Scientific Research Institute of Molecular Electronics and Plant ' ' Micron' ' , 124462, Zelenograd (Russian Federation)

    2015-04-01

    Atomic-layer deposition (ALD) technique in combination with in vacuo X-ray photoelectron spectroscopy (XPS) analysis has been successfully employed to obtain fully ALD-grown planar TiN/HfO{sub 2}/TiN metal-insulator-metal structures for resistive random access memory (ReRAM) memory elements. In vacuo XPS analysis of ALD-grown TiN/HfO{sub 2}/TiN stacks reveals the presence of the ultrathin oxidized layers consisting of TiON (∝0.5 nm) and TiO{sub 2} (∝0.6 nm) at the bottom TiN/HfO{sub 2} interface (i); the nonoxidized TiN at the top HfO{sub 2}/TiN interface (ii); the oxygen deficiency in the HfO{sub 2} layer does not exceed the XPS detection limit (iii). Electroformed ALD TiN/HfO{sub 2}/TiN stacks reveal both conventional bipolar and complementary types of resistive switching. In the complementary resistive switching regime, each programming sequence is terminated by a reset operation, leaving the TiN/HfO{sub 2}/TiN stack in a high-resistance state. The observed feature can avoid detrimental leaky paths during successive reading operation, which is useful in the passive ReRAM arrays without a selector element. The bipolar regime of resistive switching is found to reveal the gradual character of the SET and RESET switching processes. Long-term potentiation and depression tests performed on ALD-grown TiN/HfO{sub 2}/TiN stacks indicate that they can be used as electronic synapse devices for the implementation of emerging neuromorphic computation systems. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

    Directory of Open Access Journals (Sweden)

    Nenad Novkovski

    2018-01-01

    Full Text Available Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-κ dielectrics on the J-V characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V, several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. C-V characteristics of stressed (with write and erase pulses structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.

  18. Stacking Faults and Polytypes for Layered Double Hydroxides: What Can We Learn from Simulated and Experimental X-ray Powder Diffraction Data?

    Science.gov (United States)

    Sławiński, Wojciech A; Sjåstad, Anja Olafsen; Fjellvåg, Helmer

    2016-12-19

    Layered double hydroxides (LDH) are a broad group of widely studied materials. The layered character of those materials and their high flexibility for accommodating different metals and anions make them technologically interesting. The general formula for the LDH compound is [M 1-x II M x III (OH) 2 ][A n- ] x/n ·mH 2 O, where M II is a divalent metal cation which can be substituted by M III trivalent cation, and A n- is a charge compensating anion located between positively charged layers. In this paper we present a comprehensive study on possible structural disorder in LDH. We show how X-ray powder diffraction (XRPD) can be used to reveal important features of the LDH crystal structure such as stacking faults, random interlayer shifts, anion-molecule orientation, crystal water content, distribution of interlayer distances, and also LDH slab thickness. All calculations were performed using the Discus package, which gives a better flexibility in defining stacking fault sequences, simulating and refining XRPD patterns, relative to DIFFaX, DIFFaX+, and FAULTS. Finally, we show how the modeling can be applied to two LDH samples: Ni 0.67 Cr 0.33 (OH) 2 (CO 3 ) 0.16 ·mH 2 O (3D structure) and Mg 0.67 Al 0.33 (OH) 2 (NO 3 ) 0.33 (2D layered structure).

  19. Iridium Interfacial Stack (IRIS)

    Science.gov (United States)

    Spry, David James (Inventor)

    2015-01-01

    An iridium interfacial stack ("IrIS") and a method for producing the same are provided. The IrIS may include ordered layers of TaSi.sub.2, platinum, iridium, and platinum, and may be placed on top of a titanium layer and a silicon carbide layer. The IrIS may prevent, reduce, or mitigate against diffusion of elements such as oxygen, platinum, and gold through at least some of its layers.

  20. Characterization of highly stacked InAs quantum dot layers on InP substrate for a planar saturable absorber at 1.5 μm band

    International Nuclear Information System (INIS)

    Inoue, Jun; Akahane, Kouichi; Yamamoto, Naokatsu; Isu, Toshiro; Tsuchiya, Masahiro

    2006-01-01

    We examined the absorption saturation properties in the 1.5 μm band of novel highly stacked InAs quantum dot layers. The transmission change at vertical incidence based on the saturable absorption of the quantum dots was more than 1%. This value is as large as the reflection changes of previously reported 1-μm-band quantum dot saturable absorber with interference enhancement. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Deposition temperature dependence of material and Si surface passivation properties of O3-based atomic layer deposited Al2O3-based films and stacks

    International Nuclear Information System (INIS)

    Bordihn, Stefan; Mertens, Verena; Müller, Jörg W.; Kessels, W. M. M.

    2014-01-01

    The material composition and the Si surface passivation of aluminum oxide (Al 2 O 3 ) films prepared by atomic layer deposition using Al(CH 3 ) 3 and O 3 as precursors were investigated for deposition temperatures (T Dep ) between 200 °C and 500 °C. The growth per cycle decreased with increasing deposition temperature due to a lower Al deposition rate. In contrast the material composition was hardly affected except for the hydrogen concentration, which decreased from [H] = 3 at. % at 200 °C to [H]  2 O 3 /SiN x stacks complemented the work and revealed similar levels of surface passivation as single-layer Al 2 O 3 films, both for the chemical and field-effect passivation. The fixed charge density in the Al 2 O 3 /SiN x stacks, reflecting the field-effect passivation, was reduced by one order of magnitude from 3·10 12  cm −2 to 3·10 11  cm −2 when T Dep was increased from 300 °C to 500 °C. The level of the chemical passivation changed as well, but the total level of the surface passivation was hardly affected by the value of T Dep . When firing films prepared at of low T Dep , blistering of the films occurred and this strongly reduced the surface passivation. These results presented in this work demonstrate that a high level of surface passivation can be achieved for Al 2 O 3 -based films and stacks over a wide range of conditions when the combination of deposition temperature and annealing or firing temperature is carefully chosen

  2. Preparation of Cu{sub 2}ZnSnS{sub 4} thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

    Energy Technology Data Exchange (ETDEWEB)

    Su Zhenghua; Yan Chang; Sun Kaiwen; Han Zili [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Fangyang, E-mail: liufangyang@csu.edu.cn [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Liu Jin [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Lai Yanqing, E-mail: laiyanqingcsu@163.com [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China); Li Jie; Liu Yexiang [School of Metallurgical Science and Engineering, Central South University, Changsha 410083 (China)

    2012-07-15

    Earth-abundant Cu{sub 2}ZnSnS{sub 4} is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu{sub 2}ZnSnS{sub 4} and the p-type conductivity with a carrier concentration in the order of 10{sup 18} cm{sup -3} and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.

  3. Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

    Directory of Open Access Journals (Sweden)

    Y. S. Zhi

    2016-01-01

    Full Text Available Both unipolar resistive switching (URS and bipolar resistive switching (BRS behaviors are observed in Cu2O/Ga2O3 stacked layer. The conversion between BRS and URS is controllable and reversible. The switching operations in BRS mode requires smaller voltage than that in the URS mode. The oxygen vacancies closed to the Cu2O/Ga2O3 interface contributes to the BRS, and the bias-controlling filament formation/rupture in depletion layer is considered to contribute to the URS. The URS happens only in the negative voltage part due to the nature of directionality of the p-n junction. The process reported here can be developed to design memory device.

  4. Theoretical Analysis of the Dynamic Properties of a 2-2 Cement-Based Piezoelectric Dual-Layer Stacked Sensor under Impact Load

    Directory of Open Access Journals (Sweden)

    Taotao Zhang

    2017-05-01

    Full Text Available Cement-based piezoelectric materials are widely used due to the fact that compared with common smart materials, they overcome the defects of structure-incompatibility and frequency inconsistency with a concrete structure. However, the present understanding of the mechanical behavior of cement-based piezoelectric smart materials under impact load is still limited. The dynamic characteristics under impact load are of importance, for example, for studying the anti-collision properties of engineering structures and aircraft takeoff-landing safety. Therefore, in this paper, an analytical model was proposed to investigate the dynamic properties of a 2-2 cement-based piezoelectric dual-layer stacked sensor under impact load based on the piezoelectric effect. Theoretical solutions are obtained by utilizing the variable separation and Duhamel integral method. To simulate the impact load and verify the theory, three types of loads, including atransient step load, isosceles triangle load and haversine wave load, are considered and the comparisons between the theoretical results, Li’s results and numerical results are presented by using the control variate method and good agreement is found. Furthermore, the influences of several parameters were discussed and other conclusions about this sensor are also given. This should prove very helpful for the design and optimization of the 2-2 cement-based piezoelectric dual-layer stacked sensor in engineering.

  5. Cross-stacked carbon nanotube film as an additional built-in current collector and adsorption layer for high-performance lithium sulfur batteries.

    Science.gov (United States)

    Sun, Li; Kong, Weibang; Li, Mengya; Wu, Hengcai; Jiang, Kaili; Li, Qunqing; Zhang, Yihe; Wang, Jiaping; Fan, Shoushan

    2016-02-19

    Cross-stacked carbon nanotube (CNT) film is proposed as an additional built-in current collector and adsorption layer in sulfur cathodes for advanced lithium sulfur (Li-S) batteries. On one hand, the CNT film with high conductivity, microstructural rough surface, high flexibility and mechanical durability retains stable and direct electronic contact with the sulfur cathode materials, therefore decreasing internal resistivity and suppressing polarization of the cathode. On the other hand, the highly porous structure and the high surface area of the CNT film provide abundant adsorption points to support and confine sulfur cathode materials, alleviate their aggregation and promote high sulfur utilization. Moreover, the lightweight and compact structure of the CNT film adds no extra weight or volume to the sulfur cathode, benefitting the improvement of energy densities. Based on these characteristics, the sulfur cathode with a 100-layer cross-stacked CNT film presents excellent rate performances with capacities of 986, 922 and 874 mAh g(-1) at cycling rates of 0.2C, 0.5C and 1C for sulfur loading of 60 wt%, corresponding to an improvement of 52%, 109% and 146% compared to that without a CNT film. Promising cycling performances are also demonstrated, offering great potential for scaled-up production of sulfur cathodes for Li-S batteries.

  6. Theoretical Analysis of the Dynamic Properties of a 2-2 Cement-Based Piezoelectric Dual-Layer Stacked Sensor under Impact Load.

    Science.gov (United States)

    Zhang, Taotao; Liao, Yangchao; Zhang, Keping; Chen, Jun

    2017-05-04

    Cement-based piezoelectric materials are widely used due to the fact that compared with common smart materials, they overcome the defects of structure-incompatibility and frequency inconsistency with a concrete structure. However, the present understanding of the mechanical behavior of cement-based piezoelectric smart materials under impact load is still limited. The dynamic characteristics under impact load are of importance, for example, for studying the anti-collision properties of engineering structures and aircraft takeoff-landing safety. Therefore, in this paper, an analytical model was proposed to investigate the dynamic properties of a 2-2 cement-based piezoelectric dual-layer stacked sensor under impact load based on the piezoelectric effect. Theoretical solutions are obtained by utilizing the variable separation and Duhamel integral method. To simulate the impact load and verify the theory, three types of loads, including atransient step load, isosceles triangle load and haversine wave load, are considered and the comparisons between the theoretical results, Li's results and numerical results are presented by using the control variate method and good agreement is found. Furthermore, the influences of several parameters were discussed and other conclusions about this sensor are also given. This should prove very helpful for the design and optimization of the 2-2 cement-based piezoelectric dual-layer stacked sensor in engineering.

  7. Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Das, Gangadhar [Indus Synchrotrons Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2016-01-18

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.

  8. The Effect of Customized Woven and Stacked Layer Orientation on Tensile and Flexural Properties of Woven Kenaf Fibre Reinforced Epoxy Composites

    Directory of Open Access Journals (Sweden)

    A. Hamdan

    2016-01-01

    Full Text Available The synthetic fibres have created some issues including risk of inhalation during fabrication process, renewability, biodegradability, and recyclability in composites industry. The usage of biocomposites as a replacement to synthetic fibres is beginning to be widespread. However, it is noted that lesser attention has been devoted to evaluating the mechanical properties of woven kenaf composites at various woven and stacked layer orientation. Thus, the research objective is to identify the effect of woven and stacked layer orientation on tensile and flexural properties of kenaf composites. Two types of fibre orientation are employed; type A contains a higher yarn density and type B contains a low yarn density. The tensile and flexural tests are conducted to analyze the mechanical properties of woven kenaf fibre composites and compare them to random chopped kenaf composites. The fracture interface between fibre and matrix epoxy is further investigated via scanning electron microscope. Type A kenaf improved up to 199% and 177% as compared to random chopped kenaf for flexural strength and tensile strength, respectively. Scanning electron microscopy analysis shows that resin matrix is properly induced into kenaf fibre gap hence giving additional strength to woven kenaf as compared to random chopped kenaf.

  9. Algebraic stacks

    Indian Academy of Sciences (India)

    Deligne, Mumford and Artin [DM, Ar2]) and consider algebraic stacks, then we can cons- truct the 'moduli ... the moduli scheme and the moduli stack of vector bundles. First I will give ... 1–31. © Printed in India. 1 ...... Cultura, Spain. References.

  10. Effect of Thermal Budget on the Electrical Characterization of Atomic Layer Deposited HfSiO/TiN Gate Stack MOSCAP Structure.

    Directory of Open Access Journals (Sweden)

    Z N Khan

    Full Text Available Metal Oxide Semiconductor (MOS capacitors (MOSCAP have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and deposition of high-k gate dielectrics, post-deposition thermal processing, choice of metal gate structure and its post-metal deposition annealing are important parameters to optimize the process and possibly address the energy efficiency of CMOS electronics at nano scales. Atomic layer deposition technique is used throughout this work because of its known deposition kinetics resulting in excellent electrical properties and conformal structure of the device. The dynamics of annealing greatly influence the electrical properties of the gate stack and consequently the reliability of the process as well as manufacturable device. Again, the choice of the annealing technique (migration of thermal flux into the layer, time-temperature cycle and sequence are key parameters influencing the device's output characteristics. This work presents a careful selection of annealing process parameters to provide sufficient thermal budget to Si MOSCAP with atomic layer deposited HfSiO high-k gate dielectric and TiN gate metal. The post-process annealing temperatures in the range of 600°C -1000°C with rapid dwell time provide a better trade-off between the desirable performance of Capacitance-Voltage hysteresis and the leakage current. The defect dynamics is thought to be responsible for the evolution of electrical characteristics in this Si MOSCAP structure specifically designed to tune the trade-off at low frequency for device application.

  11. Towards stacked zone plates

    International Nuclear Information System (INIS)

    Werner, S; Rehbein, S; Guttman, P; Heim, S; Schneider, G

    2009-01-01

    Fresnel zone plates are the key optical elements for soft and hard x-ray microscopy. For short exposure times and minimum radiation load of the specimen the diffraction efficiency of the zone plate objectives has to be maximized. As the efficiency strongly depends on the height of the diffracting zone structures the achievable aspect ratio of the nanostructures determines these limits. To reach aspect ratios ≥ 20:1 for high efficient optics we propose to superimpose zone plates on top of each other. With this multiplication approach the final aspect ratio is only limited by the number of stacked zone plate layers. For the stack process several nanostructuring process steps have to be developed and/or improved. Our results show for the first time two layers of zone plates stacked on top of each other.

  12. Analytical modeling of multi-layered printed circuit board using multi-stacked via clusters as component heat spreader

    Directory of Open Access Journals (Sweden)

    Monier-Vinard Eric

    2016-01-01

    Full Text Available In order to help the electronic designer to early determine the limits of the power dissipation of electronic component, an analytical model was established to allow a fast insight of relevant design parameters of a multi-layered electronic board constitution. The proposed steady-state approach based on Fourier series method promotes a practical solution to quickly investigate the potential gain of multi-layered thermal via clusters. Generally, it has been shown a good agreement between the results obtained by the proposed analytical model and those given by electronics cooling software widely used in industry. Some results highlight the fact that the conventional practices for Printed Circuit Board modeling can be dramatically underestimate source temperatures, in particular with smaller sources. Moreover, the analytic solution could be applied to optimize the heat spreading in the board structure with a local modification of the effective thermal conductivity layers.

  13. Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

    Directory of Open Access Journals (Sweden)

    A. Herz

    2016-03-01

    Full Text Available Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO2 evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI oxide (WO3 which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO3 is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO3 nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

  14. Solid-state dewetting of single- and bilayer Au-W thin films: Unraveling the role of individual layer thickness, stacking sequence and oxidation on morphology evolution

    Energy Technology Data Exchange (ETDEWEB)

    Herz, A., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Franz, A.; Theska, F.; Hentschel, M.; Kups, Th.; Wang, D., E-mail: andreas.herz@tu-ilmenau.de, E-mail: dong.wang@tu-ilmenau.de; Schaaf, P. [Department of Materials for Electronics and Electrical Engineering, Institute of Materials Science and Engineering and Institute of Micro- and Nanotechnologies MacroNano, TU Ilmenau, D-98693 Ilmenau (Germany)

    2016-03-15

    Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thickness. W films deposited onto SiO{sub 2} evolve into needle-like nanocrystals rather than forming particle-like agglomerates upon annealing at elevated temperatures. Transmission electron microscopy reveals that such nanocrystals actually consist of tungsten (VI) oxide (WO{sub 3}) which is related to an anisotropic oxide crystal growth out of the thin film. The evolution of W films is highly sensitive to the presence of any residual oxygen. Combination of both the dewetting of Au and the oxide crystal growth of WO{sub 3} is realized by using various bilayer film configurations of the immiscible Au and W. At low temperature, Au dewetting is initiated while oxide crystal growth is still suppressed. Depending on the stacking sequence of the Au-W bilayer thin film, W acts either as a substrate or as a passivation layer for the dewetting of Au. Being the ground layer, W changes the wettability of Au which clearly modifies its initial state for the dewetting. Being the top layer, W prevents Au from dewetting regardless of Au film thickness. Moreover, regular pattern formation of Au-WO{sub 3} nanoparticles is observed at high temperature demonstrating how bilayer thin film dewetting can create unique nanostructure arrangements.

  15. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    Energy Technology Data Exchange (ETDEWEB)

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G. [Electrical Engineering Department, Technion, Haifa 3200 (Israel); Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J. [Electrical Engineering Department, Technion, Haifa 3200 (Israel); Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D. [Department of Material Science and Engineering, Technion, Haifa 3200 (Israel); Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Ankonina, G. [Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel); Photovoltaic Laboratory, Technion, Haifa 3200 (Israel)

    2015-10-07

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

  16. Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

    International Nuclear Information System (INIS)

    Mikhelashvili, V.; Padmanabhan, R.; Eisenstein, G.; Meyler, B.; Yofis, S.; Weindling, S.; Salzman, J.; Atiya, G.; Cohen-Hyams, Z.; Kaplan, W. D.; Ankonina, G.

    2015-01-01

    We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology

  17. The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,GaSe2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors

    Directory of Open Access Journals (Sweden)

    Chia-Ho Huang

    2014-01-01

    Full Text Available CIGS films are prepared by single-stage annealing of the solid Se-coated In/Cu-Ga bilayer precursor. The annealing processes were performed using various Ar pressures, heating rates, and soaking times. A higher Ar pressure is needed to fabricate highly crystalline CIGS films, as no extra Se-vapor source is supplied. As the heating rate increases, the surface morphologies of the CIGS films become looser and some cracks are observed. However, the influence of soaking time is insignificant and the selenization process only requires a short time when the precursors are selenized at a higher temperature with a lower heating rate and a higher Ar pressure. In this study, a dense chalcopyrite CIGS film with a thickness of about 1.5-1.6 μm, with large grains (~1.2 μm and no cracking or peeling is obtained after selenizing at a temperature of 550°C, an Ar pressure of 300 Torr, a heating rate of 60°C/min, and a soaking time of 20 min. By adequate design of the stacked precursor and controlling the annealing parameters, single-stage annealing of the solid Se-coated In/Cu-Ga bilayer precursor is simplified for the fabrication of a fully crystallized chalcopyrite CIGS absorber layers with good crystallization and large grains.

  18. Performance improvement of charge-trap memory by using a stacked Zr_0_._4_6Si_0_._5_4O_2/Al_2O_3 charge-trapping layer

    International Nuclear Information System (INIS)

    Tang, Zhenjie; Hu, Dan; Zhang, Xiwei; Zhao, Yage; Li, Rong

    2016-01-01

    The postdeposition annealing (PDA)-treated charge-trap flash memory capacitor with stacked Zr_0_._4_6Si_0_._5_4O_2/Al_2O_3 charge-trapping layer flanked by a SiO_2 tunneling oxide and an Al_2O_3 blocking oxide was fabricated and investigated. It is observed that the memory capacitor exhibits prominent memory characteristics with large memory windows 12.8 V in a ±10 V gate sweeping voltage range, faster program/erase speed, and good data-retention characteristics even at 125 C compared to a single charge-trapping layer (Zr_0_._4_6Si_0_._5_4O_2, Zr_0_._7_9Si_0_._2_1O_2, and Zr_0_._4_6Al_1_._0_8O_2_._5_4). The quantum wells and introduced interfacial traps of the stacked trapping layer regulate the storage and loss behavior of charges, and jointly contribute to the improved memory characteristics. Hence, the memory capacitor with a stacked trapping layer is a promising candidate in future nonvolatile charge-trap memory device design and application. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Performance improvement of charge-trap memory by using a stacked Zr{sub 0.46}Si{sub 0.54}O{sub 2}/Al{sub 2}O{sub 3} charge-trapping layer

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zhenjie; Hu, Dan; Zhang, Xiwei; Zhao, Yage [College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000 (China); Li, Rong [School of Mathematics and Statistics, Anyang Normal University, Anyang 455000 (China)

    2016-11-15

    The postdeposition annealing (PDA)-treated charge-trap flash memory capacitor with stacked Zr{sub 0.46}Si{sub 0.54}O{sub 2}/Al{sub 2}O{sub 3} charge-trapping layer flanked by a SiO{sub 2} tunneling oxide and an Al{sub 2}O{sub 3} blocking oxide was fabricated and investigated. It is observed that the memory capacitor exhibits prominent memory characteristics with large memory windows 12.8 V in a ±10 V gate sweeping voltage range, faster program/erase speed, and good data-retention characteristics even at 125 C compared to a single charge-trapping layer (Zr{sub 0.46}Si{sub 0.54}O{sub 2}, Zr{sub 0.79}Si{sub 0.21}O{sub 2}, and Zr{sub 0.46}Al{sub 1.08}O{sub 2.54}). The quantum wells and introduced interfacial traps of the stacked trapping layer regulate the storage and loss behavior of charges, and jointly contribute to the improved memory characteristics. Hence, the memory capacitor with a stacked trapping layer is a promising candidate in future nonvolatile charge-trap memory device design and application. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Effect of layer stacking and p-type doping on the performance of InAs/InP quantum-dash-in-a-well lasers emitting at 1.55 μm

    International Nuclear Information System (INIS)

    Moreau, G.; Azouigui, S.; Cong, D.-Y.; Merghem, K.; Martinez, A.; Patriarche, G.; Ramdane, A.; Lelarge, F.; Rousseau, B.; Dagens, B.; Poingt, F.; Accard, A.; Pommereau, F.

    2006-01-01

    The authors report the growth of 6-, 9-, and 12-layer InAs/InP quantum-dash-in-a-well (DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser performance has been investigated as a function of number of layers. The highest modal gain at 48 cm -1 is achieved for an optimized nine-DWELL layer structure. The effect of layer stacking and p-type doping on the characteristic temperature is also reported. Nine-DWELL layer single mode ridge waveguide lasers showed high slope efficiency (0.2 W/A per facet) and output power (P out =20 mW), close to those of conventional quantum well devices

  1. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    Science.gov (United States)

    Consiglio, Steven P.

    the properties of conductive HfN grown via plasma-assisted atomic layer deposition (PA-ALD) using tetrakis(ethylmethylamido)hafnium on a modified commercially available wafer processing tool. Key properties of these materials for use as gate stack replacement materials are addressed and future directions for further characterization and novel material investigations are proposed.

  2. Sliding charge density wave in the monophosphate tungsten bronze (PO2)4(WO3)2m with alternate stacking of m=4 and m=6 WO3 layers

    International Nuclear Information System (INIS)

    Foury-Leylekian, P.; Sandre, E.; Ravy, S.; Pouget, J.-P.; Elkaim, E.; Roussel, P.; Groult, D.; Labbe, Ph.

    2002-01-01

    The monophosphate tungsten bronzes (PO 2 ) 4 (WO 3 ) 2m form family of two-dimensional metals which exhibit charge density wave (CDW) instabilities. These materials are generally built by the regular stacking of (a,b) layers in which chains made of segments of m WO 6 octahedra directed along the a and a±b directions are delimited. Their electronic structure thus originates from quasi-one-dimensional (1D) bands located on these chains. As a consequence their Fermi surface (FS) exhibits large flat portions whose nesting gives rise to successive CDW instabilities. Here we present a structural study of the CDW instability of the (PO 2 ) 4 (WO 3 ) 10 member formed by the alternate stacking of layers built with segments of m=4 and m=6 WO 6 octahedra. Its ab initio electronic structure calculation shows that the FS of this member exhibits large flat portions which can be extremely well nested. Its best nesting wave vector accounts for the modulation wave vector stabilized by the CDW transition which occurs at 156 K. Because of the regular stacking of layers of different m values the FS is slightly split. The unusual thermal dependence of the x-ray satellite intensity provides evidence that the two types of layers become modulated at different temperature. This also leads to a slight thermal sliding of the CDW-nesting modulation wave vector, which can be accounted for within the framework of a Landau-Ginzburg theory. In addition, the observation of a global hysteresis in the thermal cycling of the satellite intensity, as well as the degradation of the interlayer order upon cooling, suggest the formation of a disordered lattice of dilute solitons. Such solitons allow to accommodate the charge transferred between the two types of layer. Finally the relevance of local charge transfers, at intergrowth defects, for example, to create pinned discommensurations that break the CDW coherence is emphasized in this whole family of bronzes

  3. Environmental assessment of phosphogypsum stacks

    International Nuclear Information System (INIS)

    Odat, M.; Al-Attar, L.; Raja, G.; Abdul Ghany, B.

    2009-01-01

    Phosphogypsum is one of the most important by-products of phosphate fertilizer industry. It is kept in large stacks to the west of Homs city. Storing Phosphogypsum as open stacks exposed to various environmental effects, wind and rain, may cause pollution of the surrounding ecosystem (soil, plant, water and air). This study was carried out in order to assess the environmental impact of Phosphogypsum stacks on the surrounding ecosystem. The obtained results show that Phosphogypsum stacks did not increase the concentration of radionuclides, i.e. Radon-222 and Radium-226, the external exposed dose of gamma rays, as well as the concentration of heavy metals in the components of the ecosystem, soil, plant, water and air, as their concentrations did not exceed the permissible limits. However, the concentration of fluorine in the upper layer of soil, located to the east of the Phosphogypsum stacks, increased sufficiently, especially in the dry period of the year. Also, the concentration of fluoride in plants growing up near-by the Phosphogypsum stacks was too high, exceeded the permissible levels. This was reflected in poising plants and animals, feeding on the plants. Consequently, increasing the concentration of fluoride in soil and plants is the main impact of Phosphogypsum stacks on the surrounding ecosystem. Minimising this effect could be achieved by establishing a 50 meter wide protection zone surrounding the Phosphogypsum stacks, which has to be planted with non palatable trees, such as pine and cypress, forming wind barriers. Increasing the concentrations of heavy metals and fluoride in infiltrated water around the stacks was high; hence cautions must be taken to prevent its usage in any application or disposal in adjacent rivers and leaks.(author)

  4. Environmental assessment of phosphogypsum stacks

    International Nuclear Information System (INIS)

    Odat, M.; Al-Attar, L.; Raja, G.; Abdul Ghany, B.

    2008-03-01

    Phosphogypsum is one of the most important by-products of phosphate fertilizer industry. It is kept in large stacks to the west of Homs city. Storing Phosphogypsum as open stacks exposed to various environmental effects, wind and rain, may cause pollution of the surrounding ecosystem (soil, plant, water and air). This study was carried out in order to assess the environmental impact of Phosphogypsum stacks on the surrounding ecosystem. The obtained results show that Phosphogypsum stacks did not increase the concentration of radionuclides, i.e. Radon-222 and Radium-226, the external exposed dose of gamma rays, as well as the concentration of heavy metals in the components of the ecosystem, soil, plant, water and air, as their concentrations did not exceed the permissible limits. However, the concentration of fluorine in the upper layer of soil, located to the east of the Phosphogypsum stacks, increased sufficiently, especially in the dry period of the year. Also, the concentration of fluoride in plants growing up near-by the Phosphogypsum stacks was too high, exceeded the permissible levels. This was reflected in poising plants and animals, feeding on the plants. Consequently, increasing the concentration of fluoride in soil and plants is the main impact of Phosphogypsum stacks on the surrounding ecosystem. Minimising this effect could be achieved by establishing a 50 meter wide protection zone surrounding the Phosphogypsum stacks, which has to be planted with non palatable trees, such as pine and cypress, forming wind barriers. Increasing the concentrations of heavy metals and fluoride in infiltrated water around the stacks was high; hence cautions must be taken to prevent its usage in any application or disposal in adjacent rivers and leaks.(author)

  5. Influence of face-centered-cubic texturing of Co2Fe6B2 pinned layer on tunneling magnetoresistance ratio decrease in Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd](n)-SyAF layer.

    Science.gov (United States)

    Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Chae, Kyo-Suk; Shim, Tae-Hun; Lian, Guoda; Kim, Moon; Park, Jea-Gun

    2015-05-15

    The TMR ratio of Co2Fe6B2/MgO-based p-MTJ spin valves stacked with a [Co/Pd]n-SyAF layer decreased rapidly when the ex situ magnetic annealing temperature (Tex) was increased from 275 to 325 °C, and this decrease was associated with degradation of the Co2Fe6B2 pinned layer rather than the Co2Fe6B2 free layer. At a Tex above 325 °C the amorphous Co2Fe6B2 pinned layer was transformed into a face-centered-cubic (fcc) crystalline layer textured from [Co/Pd]n-SyAF, abruptly reducing the Δ1 coherence tunneling of perpendicular-spin-torque electrons between the (100) MgO tunneling barrier and the fcc Co2Fe6B2 pinned layer.

  6. Tuning SPT-3G Transition-Edge-Sensor Electrical Properties with a Four-Layer Ti-Au-Ti-Au Thin-Film Stack

    Science.gov (United States)

    Carter, F. W.; Ade, P. A. R.; Ahmed, Z.; Anderson, A. J.; Austermann, J. E.; Avva, J. S.; Thakur, R. Basu; Bender, A. N.; Benson, B. A.; Carlstrom, J. E.; Cecil, T.; Chang, C. L.; Cliche, J. F.; Cukierman, A.; Denison, E. V.; de Haan, T.; Ding, J.; Divan, R.; Dobbs, M. A.; Dutcher, D.; Everett, W.; Foster, A.; Gannon, R. N.; Gilbert, A.; Groh, J. C.; Halverson, N. W.; Harke-Hosemann, A. H.; Harrington, N. L.; Henning, J. W.; Hilton, G. C.; Holzapfel, W. L.; Huang, N.; Irwin, K. D.; Jeong, O. B.; Jonas, M.; Khaire, T.; Kofman, A. M.; Korman, M.; Kubik, D.; Kuhlmann, S.; Kuo, C. L.; Kutepova, V.; Lee, A. T.; Lowitz, A. E.; Meyer, S. S.; Michalik, D.; Miller, C. S.; Montgomery, J.; Nadolski, A.; Natoli, T.; Nguyen, H.; Noble, G. I.; Novosad, V.; Padin, S.; Pan, Z.; Pearson, J.; Posada, C. M.; Rahlin, A.; Ruhl, J. E.; Saunders, L. J.; Sayre, J. T.; Shirley, I.; Shirokoff, E.; Smecher, G.; Sobrin, J. A.; Stan, L.; Stark, A. A.; Story, K. T.; Suzuki, A.; Tang, Q. Y.; Thompson, K. L.; Tucker, C.; Vale, L. R.; Vanderlinde, K.; Vieira, J. D.; Wang, G.; Whitehorn, N.; Yefremenko, V.; Yoon, K. W.; Young, M. R.

    2018-04-01

    We have developed superconducting Ti transition-edge sensors with Au protection layers on the top and bottom for the South Pole Telescope's third-generation receiver (a cosmic microwave background polarimeter, due to be upgraded this austral summer of 2017/2018). The base Au layer (deposited on a thin Ti glue layer) isolates the Ti from any substrate effects; the top Au layer protects the Ti from oxidation during processing and subsequent use of the sensors. We control the transition temperature and normal resistance of the sensors by varying the sensor width and the relative thicknesses of the Ti and Au layers. The transition temperature is roughly six times more sensitive to the thickness of the base Au layer than to that of the top Au layer. The normal resistance is inversely proportional to sensor width for any given film configuration. For widths greater than five micrometers, the critical temperature is independent of width.

  7. Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} nano-stacks

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Bao; Liu, Wen-Jun; Wei, Lei; Zhang, David Wei; Jiang, Anquan; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

    2015-07-07

    Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

  8. Glassy carbon based supercapacitor stacks

    Energy Technology Data Exchange (ETDEWEB)

    Baertsch, M; Braun, A; Koetz, R; Haas, O [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-06-01

    Considerable effort is being made to develop electrochemical double layer capacitors (EDLC) that store relatively large quantities of electrical energy and possess at the same time a high power density. Our previous work has shown that glassy carbon is suitable as a material for capacitor electrodes concerning low resistance and high capacity requirements. We present the development of bipolar electrochemical glassy carbon capacitor stacks of up to 3 V. Bipolar stacks are an efficient way to meet the high voltage and high power density requirements for traction applications. Impedance and cyclic voltammogram measurements are reported here and show the frequency response of a 1, 2, and 3 V stack. (author) 3 figs., 1 ref..

  9. Asymmetric Flexible Supercapacitor Stack

    Directory of Open Access Journals (Sweden)

    Leela Mohana Reddy A

    2008-01-01

    Full Text Available AbstractElectrical double layer supercapacitor is very significant in the field of electrical energy storage which can be the solution for the current revolution in the electronic devices like mobile phones, camera flashes which needs flexible and miniaturized energy storage device with all non-aqueous components. The multiwalled carbon nanotubes (MWNTs have been synthesized by catalytic chemical vapor deposition technique over hydrogen decrepitated Mischmetal (Mm based AB3alloy hydride. The polymer dispersed MWNTs have been obtained by insitu polymerization and the metal oxide/MWNTs were synthesized by sol-gel method. Morphological characterizations of polymer dispersed MWNTs have been carried out using scanning electron microscopy (SEM, transmission electron microscopy (TEM and HRTEM. An assymetric double supercapacitor stack has been fabricated using polymer/MWNTs and metal oxide/MWNTs coated over flexible carbon fabric as electrodes and nafion®membrane as a solid electrolyte. Electrochemical performance of the supercapacitor stack has been investigated using cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy.

  10. Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

    2017-05-01

    In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

  11. Open stack thermal battery tests

    Energy Technology Data Exchange (ETDEWEB)

    Long, Kevin N. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Roberts, Christine C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Grillet, Anne M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Headley, Alexander J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Fenton, Kyle [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wong, Dennis [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Ingersoll, David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-04-17

    We present selected results from a series of Open Stack thermal battery tests performed in FY14 and FY15 and discuss our findings. These tests were meant to provide validation data for the comprehensive thermal battery simulation tools currently under development in Sierra/Aria under known conditions compared with as-manufactured batteries. We are able to satisfy this original objective in the present study for some test conditions. Measurements from each test include: nominal stack pressure (axial stress) vs. time in the cold state and during battery ignition, battery voltage vs. time against a prescribed current draw with periodic pulses, and images transverse to the battery axis from which cell displacements are computed. Six battery configurations were evaluated: 3, 5, and 10 cell stacks sandwiched between 4 layers of the materials used for axial thermal insulation, either Fiberfrax Board or MinK. In addition to the results from 3, 5, and 10 cell stacks with either in-line Fiberfrax Board or MinK insulation, a series of cell-free “control” tests were performed that show the inherent settling and stress relaxation based on the interaction between the insulation and heat pellets alone.

  12. Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

    NARCIS (Netherlands)

    Hoogeland, D.; Jinesh, K.B.; Roozeboom, F.; Besling, W.F.A.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2009-01-01

    By employing plasma-assisted atomic layer deposition, thin films of Al2O3 and TiN are subsequently deposited in a single reactor at a single substrate temperature with the objective of fabricating high-quality TiN/Al2O3 / p-Si metal-oxide-semiconductor capacitors. Transmission electron microscopy

  13. OpenStack essentials

    CERN Document Server

    Radez, Dan

    2015-01-01

    If you need to get started with OpenStack or want to learn more, then this book is your perfect companion. If you're comfortable with the Linux command line, you'll gain confidence in using OpenStack.

  14. Stack gas treatment

    Science.gov (United States)

    Reeves, Adam A.

    1977-04-12

    Hot stack gases transfer contained heat to a gravity flow of pebbles treated with a catalyst, cooled stacked gases and a sulfuric acid mist is withdrawn from the unit, and heat picked up by the pebbles is transferred to air for combustion or other process. The sulfuric acid (or sulfur, depending on the catalyst) is withdrawn in a recovery unit.

  15. Mastering OpenStack

    CERN Document Server

    Khedher, Omar

    2015-01-01

    This book is intended for system administrators, cloud engineers, and system architects who want to deploy a cloud based on OpenStack in a mid- to large-sized IT infrastructure. If you have a fundamental understanding of cloud computing and OpenStack and want to expand your knowledge, then this book is an excellent checkpoint to move forward.

  16. Stacking with stochastic cooling

    Energy Technology Data Exchange (ETDEWEB)

    Caspers, Fritz E-mail: Fritz.Caspers@cern.ch; Moehl, Dieter

    2004-10-11

    Accumulation of large stacks of antiprotons or ions with the aid of stochastic cooling is more delicate than cooling a constant intensity beam. Basically the difficulty stems from the fact that the optimized gain and the cooling rate are inversely proportional to the number of particles 'seen' by the cooling system. Therefore, to maintain fast stacking, the newly injected batch has to be strongly 'protected' from the Schottky noise of the stack. Vice versa the stack has to be efficiently 'shielded' against the high gain cooling system for the injected beam. In the antiproton accumulators with stacking ratios up to 10{sup 5} the problem is solved by radial separation of the injection and the stack orbits in a region of large dispersion. An array of several tapered cooling systems with a matched gain profile provides a continuous particle flux towards the high-density stack core. Shielding of the different systems from each other is obtained both through the spatial separation and via the revolution frequencies (filters). In the 'old AA', where the antiproton collection and stacking was done in one single ring, the injected beam was further shielded during cooling by means of a movable shutter. The complexity of these systems is very high. For more modest stacking ratios, one might use azimuthal rather than radial separation of stack and injected beam. Schematically half of the circumference would be used to accept and cool new beam and the remainder to house the stack. Fast gating is then required between the high gain cooling of the injected beam and the low gain stack cooling. RF-gymnastics are used to merge the pre-cooled batch with the stack, to re-create free space for the next injection, and to capture the new batch. This scheme is less demanding for the storage ring lattice, but at the expense of some reduction in stacking rate. The talk reviews the 'radial' separation schemes and also gives some

  17. Simple Stacking Methods for Silicon Micro Fuel Cells

    Directory of Open Access Journals (Sweden)

    Gianmario Scotti

    2014-08-01

    Full Text Available We present two simple methods, with parallel and serial gas flows, for the stacking of microfabricated silicon fuel cells with integrated current collectors, flow fields and gas diffusion layers. The gas diffusion layer is implemented using black silicon. In the two stacking methods proposed in this work, the fluidic apertures and gas flow topology are rotationally symmetric and enable us to stack fuel cells without an increase in the number of electrical or fluidic ports or interconnects. Thanks to this simplicity and the structural compactness of each cell, the obtained stacks are very thin (~1.6 mm for a two-cell stack. We have fabricated two-cell stacks with two different gas flow topologies and obtained an open-circuit voltage (OCV of 1.6 V and a power density of 63 mW·cm−2, proving the viability of the design.

  18. Stacked Heterogeneous Neural Networks for Time Series Forecasting

    Directory of Open Access Journals (Sweden)

    Florin Leon

    2010-01-01

    Full Text Available A hybrid model for time series forecasting is proposed. It is a stacked neural network, containing one normal multilayer perceptron with bipolar sigmoid activation functions, and the other with an exponential activation function in the output layer. As shown by the case studies, the proposed stacked hybrid neural model performs well on a variety of benchmark time series. The combination of weights of the two stack components that leads to optimal performance is also studied.

  19. Development of all chemical solution derived Ce0.9La0.1O2−y/Gd2Zr2O7 buffer layer stack for coated conductors: influence of the post-annealing process on surface crystallinity

    International Nuclear Information System (INIS)

    Zhao, Y; Li, X-F; He, D; Andersen, N H; Grivel, J-C; Khoryushin, A; Hansen, J B

    2012-01-01

    Preparation and characterization of a biaxially textured Gd 2 Zr 2 O 7 and Ce 0.9 La 0.1 O 2−y (CLO, cap)/Gd 2 Zr 2 O 7 (GZO, barrier) buffer layer stack by the metal–organic deposition route are reported. YBa 2 Cu 3 O 7−d (YBCO) superconductor films were deposited by the pulsed-laser deposition (PLD) technique to assess the efficiency of such a novel buffer layer stack. Biaxial texture quality and morphology of the buffer layers and the YBCO superconductor films were fully characterized. The surface crystallinity of the buffer layers is studied by the electron backscatter diffraction technique. It is revealed that post-annealing GZO films in 2% H 2 in Ar is an effective way to improve the surface crystallinity. As a result, a highly textured CLO film can grow directly on the GZO film at a lower crystallization temperature. The critical current density of a YBCO PLD film is higher than 1 MA cm −2 (77 K, in self-field), demonstrating that the novel CLO/GZO stack is very promising for further development of low cost buffer layer architectures for coated conductors.

  20. Fabrication of high gradient insulators by stack compression

    Science.gov (United States)

    Harris, John Richardson; Sanders, Dave; Hawkins, Steven Anthony; Norona, Marcelo

    2014-04-29

    Individual layers of a high gradient insulator (HGI) are first pre-cut to their final dimensions. The pre-cut layers are then stacked to form an assembly that is subsequently pressed into an HGI unit with the desired dimension. The individual layers are stacked, and alignment is maintained, using a sacrificial alignment tube that is removed after the stack is hot pressed. The HGI's are used as high voltage vacuum insulators in energy storage and transmission structures or devices, e.g. in particle accelerators and pulsed power systems.

  1. Stacking the Equiangular Spiral

    OpenAIRE

    Agrawal, A.; Azabi, Y. O.; Rahman, B. M.

    2013-01-01

    We present an algorithm that adapts the mature Stack and Draw (SaD) methodology for fabricating the exotic Equiangular Spiral Photonic Crystal Fiber. (ES-PCF) The principle of Steiner chains and circle packing is exploited to obtain a non-hexagonal design using a stacking procedure based on Hexagonal Close Packing. The optical properties of the proposed structure are promising for SuperContinuum Generation. This approach could make accessible not only the equiangular spiral but also other qua...

  2. Method for applying a thin film barrier stack to a device with microstructures, and device provided with such a thin film barrier stack

    NARCIS (Netherlands)

    2005-01-01

    A method for applying a thin film barrier stack to a device with microstructures, such as, for instance, an OLED, wherein the thin film barrier stack forms a barrier to at least moisture and oxygen, wherein the stack is built up from a combination of org. and inorg. layers, characterized in that a

  3. Turbostratic stacked CVD graphene for high-performance devices

    Science.gov (United States)

    Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

    2018-03-01

    We have fabricated turbostratic stacked graphene with high-transport properties by the repeated transfer of CVD monolayer graphene. The turbostratic stacked CVD graphene exhibited higher carrier mobility and conductivity than CVD monolayer graphene. The electron mobility for the three-layer turbostratic stacked CVD graphene surpassed 10,000 cm2 V-1 s-1 at room temperature, which is five times greater than that for CVD monolayer graphene. The results indicate that the high performance is derived from maintenance of the linear band dispersion, suppression of the carrier scattering, and parallel conduction. Therefore, turbostratic stacked CVD graphene is a superior material for high-performance devices.

  4. Stacking dependence of carrier transport properties in multilayered black phosphorous

    Science.gov (United States)

    Sengupta, A.; Audiffred, M.; Heine, T.; Niehaus, T. A.

    2016-02-01

    We present the effect of different stacking orders on carrier transport properties of multi-layer black phosphorous. We consider three different stacking orders AAA, ABA and ACA, with increasing number of layers (from 2 to 6 layers). We employ a hierarchical approach in density functional theory (DFT), with structural simulations performed with generalized gradient approximation (GGA) and the bandstructure, carrier effective masses and optical properties evaluated with the meta-generalized gradient approximation (MGGA). The carrier transmission in the various black phosphorous sheets was carried out with the non-equilibrium green’s function (NEGF) approach. The results show that ACA stacking has the highest electron and hole transmission probabilities. The results show tunability for a wide range of band-gaps, carrier effective masses and transmission with a great promise for lattice engineering (stacking order and layers) in black phosphorous.

  5. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    Directory of Open Access Journals (Sweden)

    Shi-Bing Qian

    2015-12-01

    Full Text Available Amorphous indium-gallium-zinc oxide (a-IGZO thin-film transistor (TFT memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  6. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

    2015-12-15

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

  7. Influence of different sulfur to selenium ratios on the structural and electronic properties of Cu(In,Ga)(S,Se){sub 2} thin films and solar cells formed by the stacked elemental layer process

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, B. J., E-mail: bjm.mueller@web.de [Robert Bosch GmbH, Corporate Research and Advance Engineering, Advanced Functional Materials and Microsystems, D-70839 Gerlingen (Germany); Institute of Micro- and Nanomaterials, University of Ulm, D-89081 Ulm (Germany); Zimmermann, C.; Haug, V., E-mail: veronika.haug@de.bosch.com; Koehler, T.; Zweigart, S. [Robert Bosch GmbH, Corporate Research and Advance Engineering, Advanced Functional Materials and Microsystems, D-70839 Gerlingen (Germany); Hergert, F. [Bosch Solar CISTech GmbH, D-14772 Brandenburg (Germany); Herr, U., E-mail: ulrich.herr@uni-ulm.de [Institute of Micro- and Nanomaterials, University of Ulm, D-89081 Ulm (Germany)

    2014-11-07

    In this study, we investigate the effect of different elemental selenium to elemental sulfur ratios on the chalcopyrite phase formation in Cu(In,Ga)(S,Se){sub 2} thin films. The films are formed by the stacked elemental layer process. The structural and electronic properties of the thin films and solar cells are analyzed by means of scanning electron microscopy, glow discharge optical emission spectrometry, X-ray diffraction, X-ray fluorescence, Raman spectroscopy, spectral photoluminescence as well as current-voltage, and quantum efficiency measurements. The influence of different S/(S+Se) ratios on the anion incorporation and on the Ga/In distribution is investigated. We find a homogenous sulfur concentration profile inside the film from the top surface to the bottom. External quantum efficiency measurements show that the band edge of the solar cell device is shifted to shorter wavelength, which enhances the open-circuit voltages. The relative increase of the open-circuit voltage with S/(S+Se) ratio is lower than expected from the band gap energy trend, which is attributed to the presence of S-induced defects. We also observe a linear decrease of the short-circuit current density with increasing S/(S+Se) ratio which can be explained by a reduced absorption. Above a critical S/(S+Se) ratio of around 0.61, the fill factor drops drastically, which is accompanied by a strong series resistance increase which may be attributed to changes in the back contact or p-n junction properties.

  8. Influence of selenium amount on the structural and electronic properties of Cu(In,Ga)Se{sub 2} thin films and solar cells formed by the stacked elemental layer process

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, B.J., E-mail: bjm.mueller@web.de [Institute of Micro- and Nanomaterials, University of Ulm, D-89081 Ulm (Germany); Corporate Research, Robert Bosch GmbH, D-71272 Renningen (Germany); Opasanont, B.; Haug, V. [Corporate Research, Robert Bosch GmbH, D-71272 Renningen (Germany); Hergert, F. [Bosch Solar CISTech GmbH, D-14772 Brandenburg (Germany); Zweigart, S. [Corporate Research, Robert Bosch GmbH, D-71272 Renningen (Germany); Herr, U., E-mail: ulrich.herr@uni-ulm.de [Institute of Micro- and Nanomaterials, University of Ulm, D-89081 Ulm (Germany)

    2016-06-01

    In the following article the influence of selenium supply on the stacked elemental layer process during the final annealing step is investigated. We find that the Se supply strongly influences the phase formation in the Cu(In,Ga)Se {sub 2} resulting in a modified Ga/In distribution. The effects of Se supply on the structural and electronic properties of the films are reported. The solar cell performance has been investigated in detail using current voltage and external quantum efficiency measurements. We find that the chalcopyrite crystal formation is strongly influenced by the Se supply during the growth process. Furthermore the interdiffusion of Ga and In is accelerated with increasing Se amount. This has direct consequences on band gap and series resistance, which leads to changes in the values of short-circuit current density, open-circuit voltage and fill factor. The open-circuit voltage increases with increasing band gap of the Cu(In,Ga)Se {sub 2}, whereas the short-circuit current density decreases with increasing band gap. The fill factor is affected by the formation of MoSe {sub 2} at the back contact. The experimental findings are compared with the theoretical efficiency limits calculated from the Shockley–Queisser model, and also with numerical 1D SCAPS simulations. - Highlights: • Adjustment of the Ga/In distribution by the Se supply • Enhanced Ga incorporation near-surface • Interdiffusion coefficients of Ga/In are investigated. • Shockley–Queisser modeling and 1D SCAPS simulations • Fill factor is strongly coupled on the MoSe2/Mo ratio.

  9. Stochastic stacking without filters

    International Nuclear Information System (INIS)

    Johnson, R.P.; Marriner, J.

    1982-12-01

    The rate of accumulation of antiprotons is a critical factor in the design of p anti p colliders. A design of a system to accumulate higher anti p fluxes is presented here which is an alternative to the schemes used at the CERN AA and in the Fermilab Tevatron I design. Contrary to these stacking schemes, which use a system of notch filters to protect the dense core of antiprotons from the high power of the stack tail stochastic cooling, an eddy current shutter is used to protect the core in the region of the stack tail cooling kicker. Without filters one can have larger cooling bandwidths, better mixing for stochastic cooling, and easier operational criteria for the power amplifiers. In the case considered here a flux of 1.4 x 10 8 per sec is achieved with a 4 to 8 GHz bandwidth

  10. Stack filter classifiers

    Energy Technology Data Exchange (ETDEWEB)

    Porter, Reid B [Los Alamos National Laboratory; Hush, Don [Los Alamos National Laboratory

    2009-01-01

    Just as linear models generalize the sample mean and weighted average, weighted order statistic models generalize the sample median and weighted median. This analogy can be continued informally to generalized additive modeels in the case of the mean, and Stack Filters in the case of the median. Both of these model classes have been extensively studied for signal and image processing but it is surprising to find that for pattern classification, their treatment has been significantly one sided. Generalized additive models are now a major tool in pattern classification and many different learning algorithms have been developed to fit model parameters to finite data. However Stack Filters remain largely confined to signal and image processing and learning algorithms for classification are yet to be seen. This paper is a step towards Stack Filter Classifiers and it shows that the approach is interesting from both a theoretical and a practical perspective.

  11. Development of all chemical solution derived Ce0.9La0.1O2 − y/Gd2Zr2O7 buffer layer stack for coated conductors: influence of the post-annealing process on surface crystallinity

    DEFF Research Database (Denmark)

    Yue, Zhao; Li, Xiaofen; Khoryushin, Alexey

    2012-01-01

    Preparation and characterization of a biaxially textured Gd2Zr2O7 and Ce0.9La0.1O2 − y (CLO, cap)/Gd2Zr2O7 (GZO, barrier) buffer layer stack by the metal–organic deposition route are reported. YBa2Cu3O7 − d (YBCO) superconductor films were deposited by the pulsed-laser deposition (PLD) technique ...

  12. Development of an Integrated Polymer Microfluidic Stack

    International Nuclear Information System (INIS)

    Datta, Proyag; Hammacher, Jens; Pease, Mark; Gurung, Sitanshu; Goettert, Jost

    2006-01-01

    Microfluidic is a field of considerable interest. While significant research has been carried out to develop microfluidic components, very little has been done to integrate the components into a complete working system. We present a flexible modular system platform that addresses the requirements of a complete microfluidic system. A microfluidic stack system is demonstrated with the layers of the stack being modular for specific functions. The stack and accompanying infrastructure provides an attractive platform for users to transition their design concepts into a working microfluidic system quickly with very little effort. The concept is demonstrated by using the system to carry out a chemilumiscence experiment. Details regarding the fabrication, assembly and experimental methods are presented

  13. Laser pulse stacking method

    Science.gov (United States)

    Moses, E.I.

    1992-12-01

    A laser pulse stacking method is disclosed. A problem with the prior art has been the generation of a series of laser beam pulses where the outer and inner regions of the beams are generated so as to form radially non-synchronous pulses. Such pulses thus have a non-uniform cross-sectional area with respect to the outer and inner edges of the pulses. The present invention provides a solution by combining the temporally non-uniform pulses in a stacking effect to thus provide a more uniform temporal synchronism over the beam diameter. 2 figs.

  14. Ablation of film stacks in solar cell fabrication processes

    Science.gov (United States)

    Harley, Gabriel; Kim, Taeseok; Cousins, Peter John

    2013-04-02

    A dielectric film stack of a solar cell is ablated using a laser. The dielectric film stack includes a layer that is absorptive in a wavelength of operation of the laser source. The laser source, which fires laser pulses at a pulse repetition rate, is configured to ablate the film stack to expose an underlying layer of material. The laser source may be configured to fire a burst of two laser pulses or a single temporally asymmetric laser pulse within a single pulse repetition to achieve complete ablation in a single step.

  15. Vertically stacked nanocellulose tactile sensor.

    Science.gov (United States)

    Jung, Minhyun; Kim, Kyungkwan; Kim, Bumjin; Lee, Kwang-Jae; Kang, Jae-Wook; Jeon, Sanghun

    2017-11-16

    Paper-based electronic devices are attracting considerable attention, because the paper platform has unique attributes such as flexibility and eco-friendliness. Here we report on what is claimed to be the firstly fully integrated vertically-stacked nanocellulose-based tactile sensor, which is capable of simultaneously sensing temperature and pressure. The pressure and temperature sensors are operated using different principles and are stacked vertically, thereby minimizing the interference effect. For the pressure sensor, which utilizes the piezoresistance principle under pressure, the conducting electrode was inkjet printed on the TEMPO-oxidized-nanocellulose patterned with micro-sized pyramids, and the counter electrode was placed on the nanocellulose film. The pressure sensor has a high sensitivity over a wide range (500 Pa-3 kPa) and a high durability of 10 4 loading/unloading cycles. The temperature sensor combines various materials such as poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), silver nanoparticles (AgNPs) and carbon nanotubes (CNTs) to form a thermocouple on the upper nanocellulose layer. The thermoelectric-based temperature sensors generate a thermoelectric voltage output of 1.7 mV for a temperature difference of 125 K. Our 5 × 5 tactile sensor arrays show a fast response, negligible interference, and durable sensing performance.

  16. Levitation characteristics of HTS tape stacks

    Energy Technology Data Exchange (ETDEWEB)

    Pokrovskiy, S. V.; Ermolaev, Y. S.; Rudnev, I. A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

    2015-03-15

    Due to the considerable development of the technology of second generation high-temperature superconductors and a significant improvement in their mechanical and transport properties in the last few years it is possible to use HTS tapes in the magnetic levitation systems. The advantages of tapes on a metal substrate as compared with bulk YBCO material primarily in the strength, and the possibility of optimizing the convenience of manufacturing elements of levitation systems. In the present report presents the results of the magnetic levitation force measurements between the stack of HTS tapes containing of tapes and NdFeB permanent magnet in the FC and ZFC regimes. It was found a non- linear dependence of the levitation force from the height of the array of stack in both modes: linear growth at small thickness gives way to flattening and constant at large number of tapes in the stack. Established that the levitation force of stacks comparable to that of bulk samples. The numerical calculations using finite element method showed that without the screening of the applied field the levitation force of the bulk superconductor and the layered superconductor stack with a critical current of tapes increased by the filling factor is exactly the same, and taking into account the screening force slightly different.

  17. Piezoelectric Multilayer-Stacked Hybrid Actuation/Transduction System

    Science.gov (United States)

    Xu, Tian-Bing (Inventor); Jiang, Xiaoning (Inventor); Su, Ji (Inventor)

    2014-01-01

    A novel full piezoelectric multilayer stacked hybrid actuation/transduction system. The system demonstrates significantly-enhanced electromechanical performance by utilizing the cooperative contributions of the electromechanical responses of multilayer stacked negative and positive strain components. Both experimental and theoretical studies indicate that for this system, the displacement is over three times that of a same-sized conventional flextensional actuator/transducer. The system consists of at least 2 layers which include electromechanically active components. The layers are arranged such that when electric power is applied, one layer contracts in a transverse direction while the second layer expands in a transverse direction which is perpendicular to the transverse direction of the first layer. An alternate embodiment includes a third layer. In this embodiment, the outer two layers contract in parallel transverse directions while the middle layer expands in a transverse direction which is perpendicular to the transverse direction of the outer layers.

  18. Learning SaltStack

    CERN Document Server

    Myers, Colton

    2015-01-01

    If you are a system administrator who manages multiple servers, then you know how difficult it is to keep your infrastructure in line. If you've been searching for an easier way, this book is for you. No prior experience with SaltStack is required.

  19. Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Que, Yande; Xiao, Wende, E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn; Chen, Hui; Wang, Dongfei; Du, Shixuan; Gao, Hong-Jun, E-mail: wdxiao@iphy.ac.cn, E-mail: hjgao@iphy.ac.cn [Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190 (China)

    2015-12-28

    The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.

  20. Tetradymite layer assisted heteroepitaxial growth and applications

    Science.gov (United States)

    Stoica, Vladimir A.; Endicott, Lynn; Clarke, Roy; Uher, Ctirad

    2017-08-01

    A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.

  1. OpenStack cloud security

    CERN Document Server

    Locati, Fabio Alessandro

    2015-01-01

    If you are an OpenStack administrator or developer, or wish to build solutions to protect your OpenStack environment, then this book is for you. Experience of Linux administration and familiarity with different OpenStack components is assumed.

  2. Stacked magnet superconducting bearing

    International Nuclear Information System (INIS)

    Rigney, T.K. II; Saville, M.P.

    1993-01-01

    A superconducting bearing is described, comprising: a plurality of permanent magnets magnetized end-to-end and stacked side-by-side in alternating polarity, such that flux lines flow between ends of adjacent magnets; isolating means, disposed between said adjacent magnets, for reducing flux leakage between opposing sides of said adjacent magnets; and a member made of superconducting material having at least one surface in communication with said flux lines

  3. Electrochemical Detection in Stacked Paper Networks.

    Science.gov (United States)

    Liu, Xiyuan; Lillehoj, Peter B

    2015-08-01

    Paper-based electrochemical biosensors are a promising technology that enables rapid, quantitative measurements on an inexpensive platform. However, the control of liquids in paper networks is generally limited to a single sample delivery step. Here, we propose a simple method to automate the loading and delivery of liquid samples to sensing electrodes on paper networks by stacking multiple layers of paper. Using these stacked paper devices (SPDs), we demonstrate a unique strategy to fully immerse planar electrodes by aqueous liquids via capillary flow. Amperometric measurements of xanthine oxidase revealed that electrochemical sensors on four-layer SPDs generated detection signals up to 75% higher compared with those on single-layer paper devices. Furthermore, measurements could be performed with minimal user involvement and completed within 30 min. Due to its simplicity, enhanced automation, and capability for quantitative measurements, stacked paper electrochemical biosensors can be useful tools for point-of-care testing in resource-limited settings. © 2015 Society for Laboratory Automation and Screening.

  4. Consolidity: Stack-based systems change pathway theory elaborated

    Directory of Open Access Journals (Sweden)

    Hassen Taher Dorrah

    2014-06-01

    Full Text Available This paper presents an elaborated analysis for investigating the stack-based layering processes during the systems change pathway. The system change pathway is defined as the path resulting from the combinations of all successive changes induced on the system when subjected to varying environments, activities, events, or any excessive internal or external influences and happenings “on and above” its normal stands, situations or set-points during its course of life. The analysis is essentially based on the important overall system paradigm of “Time driven-event driven-parameters change”. Based on this paradigm, it is considered that any affected activity, event or varying environment is intelligently self-recorded inside the system through an incremental consolidity-scaled change in system parameters of the stack-based layering types. Various joint stack-based mathematical and graphical approaches supported by representable case studies are suggested for the identification, extraction, and processing of various stack-based systems changes layering of different classifications and categorizations. Moreover, some selected real life illustrative applications are provided to demonstrate the (infinite stack-based identification and recognition of the change pathway process in the areas of geology, archeology, life sciences, ecology, environmental science, engineering, materials, medicine, biology, sociology, humanities, and other important fields. These case studies and selected applications revealed that there are general similarities of the stack-based layering structures and formations among all the various research fields. Such general similarities clearly demonstrate the global concept of the “fractals-general stacking behavior” of real life systems during their change pathways. Therefore, it is recommended that concentrated efforts should be expedited toward building generic modular stack-based systems or blocks for the mathematical

  5. High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

    International Nuclear Information System (INIS)

    Ping, Mao; Zhi-Gang, Zhang; Li-Yang, Pan; Jun, Xu; Pei-Yi, Chen

    2009-01-01

    Stacked ruthenium (Ru) nanocrystals (NCs) are formed by rapid thermal annealing for the whole gate stacks and embedded in memory structure, which is compatible with conventional CMOS technology. Ru NCs with high density (3 × 10 12 cm −2 ), small size (2–4 nm) and good uniformity both in aerial distribution and morphology are formed. Attributed to the higher surface trap density, a memory window of 5.2 V is obtained with stacked Ru NCs in comparison to that of 3.5 V with single-layer samples. The stacked Ru NCs device also exhibits much better retention performance because of Coulomb blockade and vertical uniformity between stacked Ru NCs

  6. Development and preliminary experimental study on micro-stacked insulator

    International Nuclear Information System (INIS)

    Ren Chengyan; Yuan Weiqun; Zhang Dongdong; Yan Ping; Wang Jue

    2009-01-01

    High gradient insulating technology is one of the key technologies in new type dielectric wall accelerator(DWA). High gradient insulator, namely micro-stacked insulator, was developed and preliminary experimental study was done. Based on the finite element and particle simulating method, surface electric field distribution and electron movement track of micro-stacked insulator were numerated, and then the optimized design proposal was put forward. Using high temperature laminated method, we developed micro-stacked insulator samples which uses exhaustive fluorinated ethylene propylene(FEP) as dielectric layer and stainless steel as metal layer. Preliminary experiment of vacuum surface flashover in nanosecond pulse voltage was done and micro-stacked insulator exhibited favorable vacuum surface flashover performance with flashover field strength of near 180 kV/cm. (authors)

  7. Optoelectronic interconnects for 3D wafer stacks

    Science.gov (United States)

    Ludwig, David; Carson, John C.; Lome, Louis S.

    1996-01-01

    Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.

  8. MEAN STACK WEB DEVELOPMENT

    OpenAIRE

    Le Thanh, Nghi

    2017-01-01

    The aim of the thesis is to provide a universal website using JavaScript as the main programming language. It also shows the basic parts anyone need to create a web application. The thesis creates a simple CMS using MEAN stack. MEAN is a collection of JavaScript based technologies used to develop web application. It is an acronym for MongoDB, Express, AngularJS and Node.js. It also allows non-technical users to easily update and manage a website’s content. But the application also lets o...

  9. Die-stacking architecture

    CERN Document Server

    Xie, Yuan

    2015-01-01

    The emerging three-dimensional (3D) chip architectures, with their intrinsic capability of reducing the wire length, promise attractive solutions to reduce the delay of interconnects in future microprocessors. 3D memory stacking enables much higher memory bandwidth for future chip-multiprocessor design, mitigating the ""memory wall"" problem. In addition, heterogenous integration enabled by 3D technology can also result in innovative designs for future microprocessors. This book first provides a brief introduction to this emerging technology, and then presents a variety of approaches to design

  10. Measurements of proton energy spectra using a radiochromic film stack

    Science.gov (United States)

    Filkins, T. M.; Steidle, Jessica; Ellison, D. M.; Steidle, Jeffrey; Freeman, C. G.; Padalino, S. J.; Fiksel, G.; Regan, S. P.; Sangster, T. C.

    2014-10-01

    The energy spectrum of protons accelerated from the rear-side of a thin foil illuminated with ultra-intense laser light from the OMEGA EP laser system at the University of Rochester's Laboratory for Laser Energetics (LLE) was measured using a stack of radiochromic film (RCF). The film stack consisted of four layers of Gafchromic HD-V2 film and four layers of Gafchromic MD-V2-55 film. Aluminum foils of various thicknesses were placed between each piece of RCF in the stack. This arrangement allowed protons with energies of 30 MeV to reach the back layer of RCF in the stack. The stack was placed in the detector plane of a Thomson parabola ion energy (TPIE) spectrometer. Each piece of film in the stack was scanned using a commercially available flat-bed scanner (Epson 10000XL). The resulting optical density was converted into proton fluence using an absolute calibration of the RCF obtained at the SUNY Geneseo 1.7 MV Pelletron accelerator laboratory. In these calibration measurements, the sensitivity of the radiochromic film was measured using monoenergetic protons produced by the accelerator. Details of the analysis procedure and the resulting proton energy spectra will be presented. Funded in part by a grant from the DOE through the Laboratory for Laser Energetics.

  11. LAB3 Cosmic Ray Test Stand Analysis of Steel Stack Supports

    International Nuclear Information System (INIS)

    Cease, H.

    1998-01-01

    A cosmic ray test stand is being constructed at Lab 3. The stand consists of two stacks of steel plates one resting on top of the other. The top stack is composed of 6 plates of steel making an overall stack size of 34.5-inch x 40-inch x 99-inch. The bottom stack also has 6 layers of plate making an overall size of approximately 49.5-inch x 82-inch x 99-inch. The bottom stack is supported with three support legs. See drawing 3823.000ME-900428 for the individual plate orientation. The minimum support leg size and necessary welds between plates are determined.

  12. Theory and experiment on electromagnetic-wave-propagation velocities in stacked superconducting tunnel structures

    DEFF Research Database (Denmark)

    Sakai, S.; Ustinov, A. V.; Kohlstedt, H.

    1994-01-01

    Characteristic velocities of the electromagnetic waves propagating in vertically stacked Josephson transmission are theoretically discussed. An equation for solving n velocities of the waves in an n Josephson-junction stack is derived. The solutions of two- and threefold stacks are especially...... focused on. Furthermore, under the assumption that all parameters of the layers are equal, analytic solutions for a generic N-fold stack are presented. The velocities of the waves in two- and three-junction stacks by Nb-Al-AlOx-Nb systems are experimentally obtained by measuring the cavity resonance...

  13. Preparation of a Novel Ce0.9La0.1O2/Gd2Zr2O7 Buffer Layer Stack on NiW Alloy Substrates by the MOD Route

    DEFF Research Database (Denmark)

    Yue, Zhao; Grivel, Jean-Claude; Abrahamsen, Asger Bech

    2011-01-01

    An optimized buffer layer architecture prepared by a metal organic deposition method on biaxially textured metallic substrate is proposed and developed successfully. The major achievement of this work is to choose a ${\\rm Ce}_{0.9}{\\rm La}_{0.1}{\\rm O}_{2}$ layer as cap layer that possesses an ex...

  14. Role of stacking disorder in ice nucleation.

    Science.gov (United States)

    Lupi, Laura; Hudait, Arpa; Peters, Baron; Grünwald, Michael; Gotchy Mullen, Ryan; Nguyen, Andrew H; Molinero, Valeria

    2017-11-08

    The freezing of water affects the processes that determine Earth's climate. Therefore, accurate weather and climate forecasts hinge on good predictions of ice nucleation rates. Such rate predictions are based on extrapolations using classical nucleation theory, which assumes that the structure of nanometre-sized ice crystallites corresponds to that of hexagonal ice, the thermodynamically stable form of bulk ice. However, simulations with various water models find that ice nucleated and grown under atmospheric temperatures is at all sizes stacking-disordered, consisting of random sequences of cubic and hexagonal ice layers. This implies that stacking-disordered ice crystallites either are more stable than hexagonal ice crystallites or form because of non-equilibrium dynamical effects. Both scenarios challenge central tenets of classical nucleation theory. Here we use rare-event sampling and free energy calculations with the mW water model to show that the entropy of mixing cubic and hexagonal layers makes stacking-disordered ice the stable phase for crystallites up to a size of at least 100,000 molecules. We find that stacking-disordered critical crystallites at 230 kelvin are about 14 kilojoules per mole of crystallite more stable than hexagonal crystallites, making their ice nucleation rates more than three orders of magnitude higher than predicted by classical nucleation theory. This effect on nucleation rates is temperature dependent, being the most pronounced at the warmest conditions, and should affect the modelling of cloud formation and ice particle numbers, which are very sensitive to the temperature dependence of ice nucleation rates. We conclude that classical nucleation theory needs to be corrected to include the dependence of the crystallization driving force on the size of the ice crystallite when interpreting and extrapolating ice nucleation rates from experimental laboratory conditions to the temperatures that occur in clouds.

  15. Instant BlueStacks

    CERN Document Server

    Judge, Gary

    2013-01-01

    Get to grips with a new technology, understand what it is and what it can do for you, and then get to work with the most important features and tasks. A fast-paced, example-based approach guide for learning BlueStacks.This book is for anyone with a Mac or PC who wants to run Android apps on their computer. Whether you want to play games that are freely available for Android but not your computer, or you want to try apps before you install them on a physical device or use it as a development tool, this book will show you how. No previous experience is needed as this is written in plain English

  16. Assessing Elementary Algebra with STACK

    Science.gov (United States)

    Sangwin, Christopher J.

    2007-01-01

    This paper concerns computer aided assessment (CAA) of mathematics in which a computer algebra system (CAS) is used to help assess students' responses to elementary algebra questions. Using a methodology of documentary analysis, we examine what is taught in elementary algebra. The STACK CAA system, http://www.stack.bham.ac.uk/, which uses the CAS…

  17. Spherical Torus Center Stack Design

    International Nuclear Information System (INIS)

    C. Neumeyer; P. Heitzenroeder; C. Kessel; M. Ono; M. Peng; J. Schmidt; R. Woolley; I. Zatz

    2002-01-01

    The low aspect ratio spherical torus (ST) configuration requires that the center stack design be optimized within a limited available space, using materials within their established allowables. This paper presents center stack design methods developed by the National Spherical Torus Experiment (NSTX) Project Team during the initial design of NSTX, and more recently for studies of a possible next-step ST (NSST) device

  18. Hexagonal perovskites with cationic vacancies. 5. Structure determination on H-Ba/sub 2/Lusub(2/3)vacantsub(1/3)WO/sub 6/ - a novel rhombohedral stacking polytype with 18 layers

    Energy Technology Data Exchange (ETDEWEB)

    Wischert, W; Schittenhelm, H J; Kemmler-Sack, S [Tuebingen Univ. (Germany, F.R.). Inst. fuer Chemie

    1979-01-01

    Compounds of type Ba/sub 2/Bsub(2/3)sup(III)vacantsub(1/3)Wsup(VI)O/sub 6/ with Bsup(III) = Gd-Lu, Y are polymorphic. They crystallize in a cubic 1:1 ordered perovskite structure and in a new rhombohedral perovskite stacking polytype of 18 L respectively. By intensity calculations out of the three possible stacking sequences (4)(2), (5)(1) and (3)1(1)1 (all space group R3m) the sequence (5)(1) can be selected. For H-Ba/sub 2/Lusub(2/3)vacant sub(1/3)WO/sub 6/ the refined R' factor is 14.1%. The structure contains groups of three octahedra connected with another by common faces which are linked with each other by three corner sharing octahedra. In the block of three face sharing octahedra the central octahedral lattice site is vacant, the two outer positions are occupied by tungsten atoms. According to this distribution a direct contact of occupied face sharing octahedra is absent.

  19. Modeling fuel cell stack systems

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J H [Los Alamos National Lab., Los Alamos, NM (United States); Lalk, T R [Dept. of Mech. Eng., Texas A and M Univ., College Station, TX (United States)

    1998-06-15

    A technique for modeling fuel cell stacks is presented along with the results from an investigation designed to test the validity of the technique. The technique was specifically designed so that models developed using it can be used to determine the fundamental thermal-physical behavior of a fuel cell stack for any operating and design configuration. Such models would be useful tools for investigating fuel cell power system parameters. The modeling technique can be applied to any type of fuel cell stack for which performance data is available for a laboratory scale single cell. Use of the technique is demonstrated by generating sample results for a model of a Proton Exchange Membrane Fuel Cell (PEMFC) stack consisting of 125 cells each with an active area of 150 cm{sup 2}. A PEMFC stack was also used in the verification investigation. This stack consisted of four cells, each with an active area of 50 cm{sup 2}. Results from the verification investigation indicate that models developed using the technique are capable of accurately predicting fuel cell stack performance. (orig.)

  20. Full Piezoelectric Multilayer-Stacked Hybrid Actuation/Transduction Systems

    Science.gov (United States)

    Su, Ji; Jiang, Xiaoning; Zu, Tian-Bing

    2011-01-01

    constant at both resonance and off resonance frequencies. The effective piezoelectric constant can be alternated by varying the size of each component, the degree of the pre-curvature of the positive strain components, the thickness of each layer in the multilayer stacks, and the piezoelectric constant of the material used. Because all of the elements are piezoelectric components, Stacked HYBATS can serve as projector and receiver for underwater detection. The performance of this innovation can be enhanced by improving the piezoelectric properties.

  1. Numerical simulations of flux flow in stacked Josephson junctions

    DEFF Research Database (Denmark)

    Madsen, Søren Peder; Pedersen, Niels Falsig

    2005-01-01

    We numerically investigate Josephson vortex flux flow states in stacked Josephson junctions, motivated by recent experiments trying to observe the vortices in a square vortex lattice when a magnetic field is applied to layered high-Tc superconductors of the Bi2Sr2CaCu2Ox type. By extensive...

  2. Calculated stacking-fault energies of elemental metals

    DEFF Research Database (Denmark)

    Rosengaard, N. M.; Skriver, Hans Lomholt

    1993-01-01

    -sphere approximations. The results are in excellent agreement with recent layer Korringa-Kohn-Rostoker Green's-function calculations where stacking-fault energies for Ni, Cu, Rh, Pd, Ag, Ir, and Au were found by means of the the so-called force theorem. We find that the self-consistent fault energies for all the metals...

  3. Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

    Science.gov (United States)

    Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

    2018-03-01

    In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

  4. Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

    KAUST Repository

    Chen, Min Cheng

    2014-12-01

    Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

  5. Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

    KAUST Repository

    Chen, Min Cheng; Lin, Chia Yi; Li, Kai Hsin; Li, Lain-Jong; Chen, Chang Hsiao; Chuang, Cheng Hao; Lee, Ming Dao; Chen, Yi Ju; Hou, Yun Fang; Lin, Chang Hsien; Chen, Chun Chi; Wu, Bo Wei; Wu, Cheng San; Yang, Ivy; Lee, Yao Jen; Yeh, Wen Kuan; Wang, Tahui; Yang, Fu Liang; Hu, Chenming

    2014-01-01

    Stackable 3DFETs such as FinFET using hybrid Si/MoS2 channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS2 to Si fin and nanowire resulted in improved (+25%) Ion,n of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device Vth are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. © 2014 IEEE.

  6. Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

    International Nuclear Information System (INIS)

    Guo, Yuzheng; Robertson, John

    2016-01-01

    We calculate a large difference in the band alignments for transition metal dichalcogenide (TMD) heterojunctions when arranged in the stacked layer or lateral (in-plane) geometries, using direct supercell calculations. The stacked case follows the unpinned limit of the electron affinity rule, whereas the lateral geometry follows the strongly pinned limit of alignment of charge neutrality levels. TMDs therefore provide one of the few clear tests of band alignment models, whereas three-dimensional semiconductors give less stringent tests because of accidental chemical trends in their properties.

  7. Remote Sensing Image Classification Based on Stacked Denoising Autoencoder

    Directory of Open Access Journals (Sweden)

    Peng Liang

    2017-12-01

    Full Text Available Focused on the issue that conventional remote sensing image classification methods have run into the bottlenecks in accuracy, a new remote sensing image classification method inspired by deep learning is proposed, which is based on Stacked Denoising Autoencoder. First, the deep network model is built through the stacked layers of Denoising Autoencoder. Then, with noised input, the unsupervised Greedy layer-wise training algorithm is used to train each layer in turn for more robust expressing, characteristics are obtained in supervised learning by Back Propagation (BP neural network, and the whole network is optimized by error back propagation. Finally, Gaofen-1 satellite (GF-1 remote sensing data are used for evaluation, and the total accuracy and kappa accuracy reach 95.7% and 0.955, respectively, which are higher than that of the Support Vector Machine and Back Propagation neural network. The experiment results show that the proposed method can effectively improve the accuracy of remote sensing image classification.

  8. Time-predictable Stack Caching

    DEFF Research Database (Denmark)

    Abbaspourseyedi, Sahar

    completely. Thus, in systems with hard deadlines the worst-case execution time (WCET) of the real-time software running on them needs to be bounded. Modern architectures use features such as pipelining and caches for improving the average performance. These features, however, make the WCET analysis more...... addresses, provides an opportunity to predict and tighten the WCET of accesses to data in caches. In this thesis, we introduce the time-predictable stack cache design and implementation within a time-predictable processor. We introduce several optimizations to our design for tightening the WCET while...... keeping the timepredictability of the design intact. Moreover, we provide a solution for reducing the cost of context switching in a system using the stack cache. In design of these caches, we use custom hardware and compiler support for delivering time-predictable stack data accesses. Furthermore...

  9. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

    Science.gov (United States)

    Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi

    2012-02-02

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh.

  10. Electrically Conductive and Protective Coating for Planar SOFC Stacks

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jung-Pyung; Stevenson, Jeffry W.

    2017-12-04

    Ferritic stainless steels are preferred interconnect materials for intermediate temperature SOFCs because of their resistance to oxidation, high formability and low cost. However, their protective oxide layer produces Cr-containing volatile species at SOFC operating temperatures and conditions, which can cause cathode poisoning. Electrically conducting spinel coatings have been developed to prevent cathode poisoning and to maintain an electrically conductive pathway through SOFC stacks. However, this coating is not compatible with the formation of stable, hermetic seals between the interconnect frame component and the ceramic cell. Thus, a new aluminizing process has been developed by PNNL to enable durable sealing, prevent Cr evaporation, and maintain electrical insulation between stack repeat units. Hence, two different types of coating need to have stable operation of SOFC stacks. This paper will focus on the electrically conductive coating process. Moreover, an advanced coating process, compatible with a non-electrically conductive coating will be

  11. Nb/NiCu bilayers in single and stacked superconductive tunnel junctions: preliminary results

    International Nuclear Information System (INIS)

    Pepe, G.P.; Ruotolo, A.; Parlato, L.; Peluso, G.; Ausanio, G.; Carapella, G.; Latempa, R.

    2004-01-01

    We present preliminary experimental results concerning both single and stacked tunnel junctions in which one of the electrodes was formed by a superconductor/ferromagnet (S/F) bi-layer. In particular, in the stacked configuration a Nb/NiCu bi-layer was used as the intermediate electrode, and it was probed by tunneling on both sides. Tunnel junctions have been characterized in terms of current-voltage characteristics (IVC), and differential conductance. Preliminary steady-state injection-detection measurements performed in the stacked devices at T=4.2 K are also presented and discussed

  12. Enhanced optical fields in a multilayered microsphere with a quasiperiodic spherical stack

    International Nuclear Information System (INIS)

    Burlak, Gennadiy N

    2007-01-01

    Radiation of a nanosource placed in a microsphere with a quasiperiodic subwavelength spherical stack is studied. The spectral evolution of transmittance at the change of the thickness of two-layer blocks constructed following the Fibonacci sequence is investigated. When the number of layers (Fibonacci order) increases the structure of the spectrum acquires a fractal form. Our calculations show a rising strong field peak, when the ratio of width of layers in two-layer blocks of the stack is close to the golden mean value

  13. Stack semantics of type theory

    DEFF Research Database (Denmark)

    Coquand, Thierry; Mannaa, Bassel; Ruch, Fabian

    2017-01-01

    We give a model of dependent type theory with one univalent universe and propositional truncation interpreting a type as a stack, generalizing the groupoid model of type theory. As an application, we show that countable choice cannot be proved in dependent type theory with one univalent universe...

  14. Multilayer Piezoelectric Stack Actuator Characterization

    Science.gov (United States)

    Sherrit, Stewart; Jones, Christopher M.; Aldrich, Jack B.; Blodget, Chad; Bao, Xioaqi; Badescu, Mircea; Bar-Cohen, Yoseph

    2008-01-01

    Future NASA missions are increasingly seeking to use actuators for precision positioning to accuracies of the order of fractions of a nanometer. For this purpose, multilayer piezoelectric stacks are being considered as actuators for driving these precision mechanisms. In this study, sets of commercial PZT stacks were tested in various AC and DC conditions at both nominal and extreme temperatures and voltages. AC signal testing included impedance, capacitance and dielectric loss factor of each actuator as a function of the small-signal driving sinusoidal frequency, and the ambient temperature. DC signal testing includes leakage current and displacement as a function of the applied DC voltage. The applied DC voltage was increased to over eight times the manufacturers' specifications to investigate the correlation between leakage current and breakdown voltage. Resonance characterization as a function of temperature was done over a temperature range of -180C to +200C which generally exceeded the manufacturers' specifications. In order to study the lifetime performance of these stacks, five actuators from one manufacturer were driven by a 60volt, 2 kHz sine-wave for ten billion cycles. The tests were performed using a Lab-View controlled automated data acquisition system that monitored the waveform of the stack electrical current and voltage. The measurements included the displacement, impedance, capacitance and leakage current and the analysis of the experimental results will be presented.

  15. V-stack piezoelectric actuator

    Science.gov (United States)

    Ardelean, Emil V.; Clark, Robert L.

    2001-07-01

    Aeroelastic control of wings by means of a distributed, trailing-edge control surface is of interest with regards to maneuvers, gust alleviation, and flutter suppression. The use of high energy density, piezoelectric materials as motors provides an appealing solution to this problem. A comparative analysis of the state of the art actuators is currently being conducted. A new piezoelectric actuator design is presented. This actuator meets the requirements for trailing edge flap actuation in both stroke and force. It is compact, simple, sturdy, and leverages stroke geometrically with minimum force penalties while displaying linearity over a wide range of stroke. The V-Stack Piezoelectric Actuator, consists of a base, a lever, two piezoelectric stacks, and a pre-tensioning element. The work is performed alternately by the two stacks, placed on both sides of the lever. Pre-tensioning can be readily applied using a torque wrench, obviating the need for elastic elements and this is for the benefit of the stiffness of the actuator. The characteristics of the actuator are easily modified by changing the base or the stacks. A prototype was constructed and tested experimentally to validate the theoretical model.

  16. Adding large EM stack support

    KAUST Repository

    Holst, Glendon

    2016-12-01

    Serial section electron microscopy (SSEM) image stacks generated using high throughput microscopy techniques are an integral tool for investigating brain connectivity and cell morphology. FIB or 3View scanning electron microscopes easily generate gigabytes of data. In order to produce analyzable 3D dataset from the imaged volumes, efficient and reliable image segmentation is crucial. Classical manual approaches to segmentation are time consuming and labour intensive. Semiautomatic seeded watershed segmentation algorithms, such as those implemented by ilastik image processing software, are a very powerful alternative, substantially speeding up segmentation times. We have used ilastik effectively for small EM stacks – on a laptop, no less; however, ilastik was unable to carve the large EM stacks we needed to segment because its memory requirements grew too large – even for the biggest workstations we had available. For this reason, we refactored the carving module of ilastik to scale it up to large EM stacks on large workstations, and tested its efficiency. We modified the carving module, building on existing blockwise processing functionality to process data in manageable chunks that can fit within RAM (main memory). We review this refactoring work, highlighting the software architecture, design choices, modifications, and issues encountered.

  17. Maturing of SOFC cell and stack production technology and preparation for demonstration of SOFC stacks. Part 2

    Energy Technology Data Exchange (ETDEWEB)

    2006-07-01

    The TOFC/Riso pilot plant production facility for the manufacture of anode-supported cells has been further up-scaled with an automated continuous spraying process and an extra sintering capacity resulting in production capacity exceeding 15,000 standard cells (12x12 cm2) in 2006 with a success rate of about 85% in the cell production. All processing steps such as tape-casting, spraying, screen-printing and atmospheric air sintering in the cell production have been selected on condition that up-scaling and cost effective, flexible, industrial mass production are feasible. The standard cell size is currently being increased to 18x18 cm2, and 150 cells of this size have been produced in 2006 for our further stack development. To improve quality and lower production cost, a new screen printing line is under establishment. TOFC's stack design is an ultra compact multilayer assembly of cells (including contact layers), metallic interconnects, spacer frames and glass seals. The compactness ensures minimized material consumption and low cost. Standard stacks with cross flow configuration contains 75 cells (12x12cm2) delivering about 1.2 kW at optimal operation conditions with pre-reformed NG as fuel. Stable performance has been demonstrated for 500-1000 hours. Significantly improved materials, especially concerning the metallic interconnect and the coatings have been introduced during the last year. Small stacks (5-10 cells) exhibit no detectable stack degradation using our latest cells and stack materials during test periods of 500-1000 hours. Larger stacks (50-75 cells) suffer from mal-distribution of gas and air inside the stacks, gas leakage, gas cross-over, pressure drop, and a certain loss of internal electrical contact during operation cycles. Measures have been taken to find solutions during the following development work. The stack production facilities have been improved and up-scaled. In 2006, 5 standard stacks have been assembled and burned in based on

  18. Study on the polarity, solubility, and stacking characteristics of asphaltenes

    KAUST Repository

    Zhang, Long-li

    2014-07-01

    The structure and transformation of fused aromatic ring system in asphaltenes play an important role in the character of asphaltenes, and in step affect the properties of heavy oils. Polarity, solubility and structural characteristics of asphaltenes derived from Tahe atmospheric residue (THAR) and Tuo-826 heavy crude oil (Tuo-826) were analyzed for study of their internal relationship. A fractionation method was used to separate the asphaltenes into four sub-fractions, based on their solubility in the mixed solvent, for the study of different structural and physical-chemical properties, such as polarity, solubility, morphology, stacking characteristics, and mean structural parameters. Transmission electron microscope (TEM) observation can present the intuitive morphology of asphaltene molecules, and shows that the structure of asphaltenes is in local order as well as long range disorder. The analysis results showed that n-heptane asphaltenes of THAR and Tuo-826 had larger dipole moment values, larger fused aromatic ring systems, larger mean number of stacking layers, and less interlayer spacing between stacking layers than the corresponding n-pentane asphaltenes. The sub-fractions that were inclined to precipitate from the mixture of n-heptane and tetrahydrofuran had larger polarity and less solubility. From the first sub-fraction to the fourth sub-fraction, polarity, mean stacking numbers, and average layer size from the TEM images follow a gradual decrease. The structural parameters derived from TEM images could reflect the largest fused aromatic ring system in asphaltene molecule, yet the parameters derived from 1H NMR data reflected the mean message of poly-aromatic ring systems. The structural parameters derived from TEM images were more consistent with the polarity variation of sub-fractions than those derived from 1H NMR data, which indicates that the largest fused aromatic ring system will play a more important role in the stacking characteristics of

  19. Iridium Interfacial Stack - IrIS

    Science.gov (United States)

    Spry, David

    2012-01-01

    Iridium Interfacial Stack (IrIS) is the sputter deposition of high-purity tantalum silicide (TaSi2-400 nm)/platinum (Pt-200 nm)/iridium (Ir-200 nm)/platinum (Pt-200 nm) in an ultra-high vacuum system followed by a 600 C anneal in nitrogen for 30 minutes. IrIS simultaneously acts as both a bond metal and a diffusion barrier. This bondable metallization that also acts as a diffusion barrier can prevent oxygen from air and gold from the wire-bond from infiltrating silicon carbide (SiC) monolithically integrated circuits (ICs) operating above 500 C in air for over 1,000 hours. This TaSi2/Pt/Ir/Pt metallization is easily bonded for electrical connection to off-chip circuitry and does not require extra anneals or masking steps. There are two ways that IrIS can be used in SiC ICs for applications above 500 C: it can be put directly on a SiC ohmic contact metal, such as Ti, or be used as a bond metal residing on top of an interconnect metal. For simplicity, only the use as a bond metal is discussed. The layer thickness ratio of TaSi2 to the first Pt layer deposited thereon should be 2:1. This will allow Si from the TaSi2 to react with the Pt to form Pt2Si during the 600 C anneal carried out after all layers have been deposited. The Ir layer does not readily form a silicide at 600 C, and thereby prevents the Si from migrating into the top-most Pt layer during future anneals and high-temperature IC operation. The second (i.e., top-most) deposited Pt layer needs to be about 200 nm to enable easy wire bonding. The thickness of 200 nm for Ir was chosen for initial experiments; further optimization of the Ir layer thickness may be possible via further experimentation. Ir itself is not easily wire-bonded because of its hardness and much higher melting point than Pt. Below the iridium layer, the TaSi2 and Pt react and form desired Pt2Si during the post-deposition anneal while above the iridium layer remains pure Pt as desired to facilitate easy and strong wire-bonding to the Si

  20. Vertical melting of a stack of membranes

    Science.gov (United States)

    Borelli, M. E. S.; Kleinert, H.; Schakel, A. M. J.

    2001-02-01

    A stack of tensionless membranes with nonlinear curvature energy and vertical harmonic interaction is studied. At low temperatures, the system forms a lamellar phase. At a critical temperature, the stack disorders vertically in a melting-like transition.

  1. Stacked white OLED having separate red, green and blue sub-elements

    Energy Technology Data Exchange (ETDEWEB)

    Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael

    2014-07-01

    The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer--i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.

  2. Helping Students Design HyperCard Stacks.

    Science.gov (United States)

    Dunham, Ken

    1995-01-01

    Discusses how to teach students to design HyperCard stacks. Highlights include introducing HyperCard, developing storyboards, introducing design concepts and scripts, presenting stacks, evaluating storyboards, and continuing projects. A sidebar presents a HyperCard stack evaluation form. (AEF)

  3. PRECISION COSMOGRAPHY WITH STACKED VOIDS

    International Nuclear Information System (INIS)

    Lavaux, Guilhem; Wandelt, Benjamin D.

    2012-01-01

    We present a purely geometrical method for probing the expansion history of the universe from the observation of the shape of stacked voids in spectroscopic redshift surveys. Our method is an Alcock-Paczyński (AP) test based on the average sphericity of voids posited on the local isotropy of the universe. It works by comparing the temporal extent of cosmic voids along the line of sight with their angular, spatial extent. We describe the algorithm that we use to detect and stack voids in redshift shells on the light cone and test it on mock light cones produced from N-body simulations. We establish a robust statistical model for estimating the average stretching of voids in redshift space and quantify the contamination by peculiar velocities. Finally, assuming that the void statistics that we derive from N-body simulations is preserved when considering galaxy surveys, we assess the capability of this approach to constrain dark energy parameters. We report this assessment in terms of the figure of merit (FoM) of the dark energy task force and in particular of the proposed Euclid mission which is particularly suited for this technique since it is a spectroscopic survey. The FoM due to stacked voids from the Euclid wide survey may double that of all other dark energy probes derived from Euclid data alone (combined with Planck priors). In particular, voids seem to outperform baryon acoustic oscillations by an order of magnitude. This result is consistent with simple estimates based on mode counting. The AP test based on stacked voids may be a significant addition to the portfolio of major dark energy probes and its potentialities must be studied in detail.

  4. Docker on OpenStack

    OpenAIRE

    Agarwal, Nitin; Moreira, Belmiro

    2014-01-01

    Project Specification CERN is establishing a large scale private cloud based on OpenStack as part of the expansion of the computing infrastructure for storing the data coming out of the Large Hadron Collider (LHC) experiments. As the data coming out of the detectors is increasing continuously that needs to be stored in the data center, we need more physical resources (more money) and since Virtual machines takes lot of CPU and memory overhead and minutes for creating the images, booting u...

  5. Stack Monitor Operating Experience Review

    International Nuclear Information System (INIS)

    Cadwallader, L.C.; Bruyere, S.A.

    2009-01-01

    Stack monitors are used to sense radioactive particulates and gases in effluent air being vented from rooms of nuclear facilities. These monitors record the levels and types of effluents to the environment. This paper presents the results of a stack monitor operating experience review of the U.S. Department of Energy (DOE) Occurrence Reporting and Processing System (ORPS) database records from the past 18 years. Regulations regarding these monitors are briefly described. Operating experiences reported by the U.S. DOE and in engineering literature sources were reviewed to determine the strengths and weaknesses of these monitors. Electrical faults, radiation instrumentation faults, and human errors are the three leading causes of failures. A representative 'all modes' failure rate is 1E-04/hr. Repair time estimates vary from an average repair time of 17.5 hours (with spare parts on hand) to 160 hours (without spare parts on hand). These data should support the use of stack monitors in any nuclear facility, including the National Ignition Facility and the international ITER project.

  6. Lightweight Stacks of Direct Methanol Fuel Cells

    Science.gov (United States)

    Narayanan, Sekharipuram; Valdez, Thomas

    2004-01-01

    An improved design concept for direct methanol fuel cells makes it possible to construct fuel-cell stacks that can weigh as little as one-third as much as do conventional bipolar fuel-cell stacks of equal power. The structural-support components of the improved cells and stacks can be made of relatively inexpensive plastics. Moreover, in comparison with conventional bipolar fuel-cell stacks, the improved fuel-cell stacks can be assembled, disassembled, and diagnosed for malfunctions more easily. These improvements are expected to bring portable direct methanol fuel cells and stacks closer to commercialization. In a conventional bipolar fuel-cell stack, the cells are interspersed with bipolar plates (also called biplates), which are structural components that serve to interconnect the cells and distribute the reactants (methanol and air). The cells and biplates are sandwiched between metal end plates. Usually, the stack is held together under pressure by tie rods that clamp the end plates. The bipolar stack configuration offers the advantage of very low internal electrical resistance. However, when the power output of a stack is only a few watts, the very low internal resistance of a bipolar stack is not absolutely necessary for keeping the internal power loss acceptably low.

  7. Solid Oxide Fuel Cell Stack Diagnostics

    DEFF Research Database (Denmark)

    Mosbæk, Rasmus Rode; Barfod, Rasmus Gottrup

    As SOFC technology is moving closer to a commercial break through, methods to measure the “state-of-health” of operating stacks are becoming of increasing interest. This requires application of advanced methods for detailed electrical and electrochemical characterization during operation....... An operating stack is subject to compositional gradients in the gaseous reactant streams, and temperature gradients across each cell and across the stack, which complicates detailed analysis. Several experimental stacks from Topsoe Fuel Cell A/S were characterized using Electrochemical Impedance Spectroscopy...... in the hydrogen fuel gas supplied to the stack. EIS was used to examine the long-term behavior and monitor the evolution of the impedance of each of the repeating units and the whole stack. The observed impedance was analyzed in detail for one of the repeating units and the whole stack and the losses reported...

  8. Ultrahigh capacitance density for multiple ALD-grown MIM capacitor stacks in 3-D silicon

    NARCIS (Netherlands)

    Klootwijk, J.H.; Jinesh, K.B.; Dekkers, W.; Verhoeven, J.F.C.; Heuvel, van den F.C.; Kim, H.-D.; Blin, D.; Verheijen, M.A.; Weemaes, R.G.R.; Kaiser, M.; Ruigrok, J.J.M.; Roozeboom, F.

    2008-01-01

    "Trench" capacitors containing multiple metal-insulator-metal (MIM) layer stacks are realized by atomic-layer deposition (ALD), yielding an ultrahigh capacitance density of 440 nF/mm2 at a breakdown voltage VBD > 6 V. This capacitance density on silicon is at least 10 times higher than the values

  9. Friedel Transition in Layered Superconductors

    International Nuclear Information System (INIS)

    Dzierzawa, M.; Zamora, M.; Baeriswyl, D.; Bagnoud, X.

    1996-01-01

    Weakly coupled superconducting layers are described by the anisotropic 3D XY model. A low-temperature layer decoupling due to a proliferation of fluxons between planes, as proposed by Friedel, does not occur. The same is true for a periodic superlattice of high and low T c layers, although the interplane coherence can become extremely weak. On the other hand a true layer decoupling is found for a random stack. copyright 1996 The American Physical Society

  10. Correlated lateral phase separations in stacks of lipid membranes

    Energy Technology Data Exchange (ETDEWEB)

    Hoshino, Takuma, E-mail: hoshino-takuma@ed.tmu.ac.jp [Department of Chemistry, Graduate School of Science and Engineering, Tokyo Metropolitan University, Tokyo 192-0397 (Japan); Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Ramat Aviv, Tel Aviv 69978 (Israel); Kavli Institute for Theoretical Physics China, CAS, Beijing 100190 (China); Komura, Shigeyuki, E-mail: komura@tmu.ac.jp [Department of Chemistry, Graduate School of Science and Engineering, Tokyo Metropolitan University, Tokyo 192-0397 (Japan); Kavli Institute for Theoretical Physics China, CAS, Beijing 100190 (China); Andelman, David, E-mail: andelman@post.tau.ac.il [Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Ramat Aviv, Tel Aviv 69978 (Israel); Kavli Institute for Theoretical Physics China, CAS, Beijing 100190 (China)

    2015-12-28

    Motivated by the experimental study of Tayebi et al. [Nat. Mater. 11, 1074 (2012)] on phase separation of stacked multi-component lipid bilayers, we propose a model composed of stacked two-dimensional Ising spins. We study both its static and dynamical features using Monte Carlo simulations with Kawasaki spin exchange dynamics that conserves the order parameter. We show that at thermodynamical equilibrium, due to strong inter-layer correlations, the system forms a continuous columnar structure for any finite interaction across adjacent layers. Furthermore, the phase separation shows a faster dynamics as the inter-layer interaction is increased. This temporal behavior is mainly due to an effective deeper temperature quench because of the larger value of the critical temperature, T{sub c}, for larger inter-layer interaction. When the temperature ratio, T/T{sub c}, is kept fixed, the temporal growth exponent does not increase and even slightly decreases as a function of the increased inter-layer interaction.

  11. A cross-stacked plasmonic nanowire network for high-contrast femtosecond optical switching.

    Science.gov (United States)

    Lin, Yuanhai; Zhang, Xinping; Fang, Xiaohui; Liang, Shuyan

    2016-01-21

    We report an ultrafast optical switching device constructed by stacking two layers of gold nanowires into a perpendicularly crossed network, which works at a speed faster than 280 fs with an on/off modulation depth of about 22.4%. The two stacks play different roles in enhancing consistently the optical switching performance due to their different dependence on the polarization of optical electric fields. The cross-plasmon resonance based on the interaction between the perpendicularly stacked gold nanowires and its Fano-coupling with Rayleigh anomaly is the dominant mechanism for such a high-contrast optical switching device.

  12. Continued SOFC cell and stack technology and improved production methods

    Energy Technology Data Exchange (ETDEWEB)

    Wandel, M.; Brodersen, K.; Phair, J. (and others)

    2009-05-15

    . Different types of co-casting were tried and the results are very promising. The results indicate that upon proper development production price can be significantly lowered and better control on thickness and microstructure may be obtained. Lamination as a technique to produce half cells has been developed within this project and results showed that the technique gives good control over the various layers. The enhanced control on thickness made it possible to develop cells with even thinner anode support and thereby decreasing the material consumption and still maintain small cell curvature and low electrolyte leak-rate. New cathodes based on LSCF were screen printed onto standard half-cells and tested in a stack. The ASR of the cells was lowered compared to standard 2G production cells and also the degradation was improved. A 10 cell stack was assembled and is still operated - more than 3000 hr has now been reached. An improvement in ASR was also obtained for half-cells produced without MEK and DBP in the paste thereby combining a more environmentally production with improved performance. (LN)

  13. Band Gap Grading of Stacked Cu(In,Ga)S{sub 2} Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Seonghyun; Sohn, So Hyeong; Shim, Hyeong Seop; Park, Seung Min; Song, Jae Kyu [Kyung Hee University, Seoul (Korea, Republic of); Min, Byoung Koun [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

    2016-01-15

    The band gap energy of CIGS, which depends on the composition variation and strain effect, can influence the collection and recombination of photocarriers. The solar cell efficiency is improved by the graded band gap in the absorber layer due to the enhanced carrier collection and the reduced carrier recombination. In our previous study, the photovoltaic performance of solar cells was affected by the stacking combination of layers, where the solar cell with dense-bottom and porous-top layers showed better performance than that with a reversely stacked structure. We studied the stacking effect of CIGS thin films. The stacking did not change E {sub g} of each layer, which led to the double grading of E {sub g} along the depth of the stacked films, mainly due to the difference in E {sub g} between the dense and porous layers. The higher degree of the grading in A+B+A improved J {sub sc}. However, the higher density of the defect states in A+B+A reduced V {sub oc}, which was inferred by the short lifetime of the carriers and the broad bandwidth of photoluminescence. Overall, the efficiency of A+B+A was only slightly improved compared to that of B+A.

  14. Stacking stability of MoS2 bilayer: An ab initio study

    International Nuclear Information System (INIS)

    Tao Peng; Guo Huai-Hong; Yang Teng; Zhang Zhi-Dong

    2014-01-01

    The study of the stacking stability of bilayer MoS 2 is essential since a bilayer has exhibited advantages over single layer MoS 2 in many aspects for nanoelectronic applications. We explored the relative stability, optimal sliding path between different stacking orders of bilayer MoS 2 , and (especially) the effect of inter-layer stress, by combining first-principles density functional total energy calculations and the climbing-image nudge-elastic-band (CI-NEB) method. Among five typical stacking orders, which can be categorized into two kinds (I: AA, AB and II: AA', AB', A'B), we found that stacking orders with Mo and S superposing from both layers, such as AA' and AB, is more stable than the others. With smaller computational efforts than potential energy profile searching, we can study the effect of inter-layer stress on the stacking stability. Under isobaric condition, the sliding barrier increases by a few eV/(ucGPa) from AA' to AB', compared to 0.1 eV/(ucGPa) from AB to [AB]. Moreover, we found that interlayer compressive stress can help enhance the transport properties of AA'. This study can help understand why inter-layer stress by dielectric gating materials can be an effective means to improving MoS 2 on nanoelectronic applications. (condensed matter: structural, mechanical, and thermal properties)

  15. Modelling the protocol stack in NCS with deterministic and stochastic petri net

    Science.gov (United States)

    Hui, Chen; Chunjie, Zhou; Weifeng, Zhu

    2011-06-01

    Protocol stack is the basis of the networked control systems (NCS). Full or partial reconfiguration of protocol stack offers both optimised communication service and system performance. Nowadays, field testing is unrealistic to determine the performance of reconfigurable protocol stack; and the Petri net formal description technique offers the best combination of intuitive representation, tool support and analytical capabilities. Traditionally, separation between the different layers of the OSI model has been a common practice. Nevertheless, such a layered modelling analysis framework of protocol stack leads to the lack of global optimisation for protocol reconfiguration. In this article, we proposed a general modelling analysis framework for NCS based on the cross-layer concept, which is to establish an efficiency system scheduling model through abstracting the time constraint, the task interrelation, the processor and the bus sub-models from upper and lower layers (application, data link and physical layer). Cross-layer design can help to overcome the inadequacy of global optimisation based on information sharing between protocol layers. To illustrate the framework, we take controller area network (CAN) as a case study. The simulation results of deterministic and stochastic Petri-net (DSPN) model can help us adjust the message scheduling scheme and obtain better system performance.

  16. The untyped stack calculus and Bohm's theorem

    Directory of Open Access Journals (Sweden)

    Alberto Carraro

    2013-03-01

    Full Text Available The stack calculus is a functional language in which is in a Curry-Howard correspondence with classical logic. It enjoys confluence but, as well as Parigot's lambda-mu, does not admit the Bohm Theorem, typical of the lambda-calculus. We present a simple extension of stack calculus which is for the stack calculus what Saurin's Lambda-mu is for lambda-mu.

  17. Flexural characteristics of a stack leg

    International Nuclear Information System (INIS)

    Cook, J.

    1979-06-01

    A 30 MV tandem Van de Graaff accelerator is at present under construction at Daresbury Laboratory. The insulating stack of the machine is of modular construction, each module being 860 mm in length. Each live section stack module contains 8 insulating legs mounted between bulkhead rings. The design, fabrication (from glass discs bonded to stainless steel discs using an epoxy film adhesive) and testing of the stack legs is described. (U.K.)

  18. Radar Target Recognition Based on Stacked Denoising Sparse Autoencoder

    Directory of Open Access Journals (Sweden)

    Zhao Feixiang

    2017-04-01

    Full Text Available Feature extraction is a key step in radar target recognition. The quality of the extracted features determines the performance of target recognition. However, obtaining the deep nature of the data is difficult using the traditional method. The autoencoder can learn features by making use of data and can obtain feature expressions at different levels of data. To eliminate the influence of noise, the method of radar target recognition based on stacked denoising sparse autoencoder is proposed in this paper. This method can extract features directly and efficiently by setting different hidden layers and numbers of iterations. Experimental results show that the proposed method is superior to the K-nearest neighbor method and the traditional stacked autoencoder.

  19. STACKING ON COMMON REFLECTION SURFACE WITH MULTIPARAMETER TRAVELTIME

    Directory of Open Access Journals (Sweden)

    Montes V. Luis A.

    2006-12-01

    Full Text Available Commonly seismic images are displayed in time domain because the model in depth can be known only in well logs. To produce seismic sections, pre and post stack processing approaches use time or depth velocity models whereas the common reflection method does not, instead it requires a set of parameters established for the first layer. A set of synthetic data of an anticline model, with sources and receivers placed on a flat topography, was used to observe the performance of this method. As result, a better reflector recovering compared against conventional processing sequence was observed.
    The procedure was extended to real data, using a dataset acquired on a zone characterized by mild topography and quiet environment reflectors in the Eastern Colombia planes, observing an enhanced and a better continuity of the reflectors in the CRS stacked section.

  20. ooi: OpenStack OCCI interface

    Directory of Open Access Journals (Sweden)

    Álvaro López García

    2016-01-01

    Full Text Available In this document we present an implementation of the Open Grid Forum’s Open Cloud Computing Interface (OCCI for OpenStack, namely ooi (Openstack occi interface, 2015  [1]. OCCI is an open standard for management tasks over cloud resources, focused on interoperability, portability and integration. ooi aims to implement this open interface for the OpenStack cloud middleware, promoting interoperability with other OCCI-enabled cloud management frameworks and infrastructures. ooi focuses on being non-invasive with a vanilla OpenStack installation, not tied to a particular OpenStack release version.

  1. ooi: OpenStack OCCI interface

    Science.gov (United States)

    López García, Álvaro; Fernández del Castillo, Enol; Orviz Fernández, Pablo

    In this document we present an implementation of the Open Grid Forum's Open Cloud Computing Interface (OCCI) for OpenStack, namely ooi (Openstack occi interface, 2015) [1]. OCCI is an open standard for management tasks over cloud resources, focused on interoperability, portability and integration. ooi aims to implement this open interface for the OpenStack cloud middleware, promoting interoperability with other OCCI-enabled cloud management frameworks and infrastructures. ooi focuses on being non-invasive with a vanilla OpenStack installation, not tied to a particular OpenStack release version.

  2. Non-destructive spatial characterization of buried interfaces in multilayer stacks via two color picosecond acoustics

    Science.gov (United States)

    Faria, Jorge C. D.; Garnier, Philippe; Devos, Arnaud

    2017-12-01

    We demonstrate the ability to construct wide-area spatial mappings of buried interfaces in thin film stacks in a non-destructive manner using two color picosecond acoustics. Along with the extraction of layer thicknesses and sound velocities from acoustic signals, the morphological information presented is a powerful demonstration of phonon imaging as a metrological tool. For a series of heterogeneous (polymer, metal, and semiconductor) thin film stacks that have been treated with a chemical procedure known to alter layer properties, the spatial mappings reveal changes to interior thicknesses and chemically modified surface features without the need to remove uppermost layers. These results compare well to atomic force microscopy scans showing that the technique provides a significant advantage to current characterization methods for industrially important device stacks.

  3. Comprehensive first-principles study of stable stacking faults in hcp metals

    International Nuclear Information System (INIS)

    Yin, Binglun; Wu, Zhaoxuan; Curtin, W.A.

    2017-01-01

    The plastic deformation in hcp metals is complex, with the associated dislocation core structures and properties not well understood on many slip planes in most hcp metals. A first step in establishing the dislocation properties is to examine the stable stacking fault energy and its structure on relevant slip planes. However, this has been perplexing in the hcp structure due to additional in-plane displacements on both sides of the slip plane. Here, density functional theory guided by crystal symmetry analysis is used to study all relevant stable stacking faults in 6 hcp metals (Mg, Ti, Zr, Re, Zn, Cd). Specially, the stable stacking fault energy, position, and structure on the Basal, Prism I and II, Pyramidal I and II planes are determined using all-periodic supercells with full atomic relaxation. All metals show similar stacking fault position and structure as dictated by crystal symmetry, but the associated stacking fault energy, being governed by the atomic bonding, differs significantly among them. Stacking faults on all the slip planes except the Basal plane show substantial out-of-plane displacements while stacking faults on the Prism II, Pyramidal I and II planes show additional in-plane displacements, all extending to multiple atom layers. The in-plane displacements are not captured in the standard computational approach for stacking faults, and significant differences are shown in the energies of such stacking faults between the standard approach and fully-relaxed case. The existence of well-defined stable stacking fault on the Pyramidal planes suggests zonal dislocations are unlikely. Calculations on the equilibrium partial separation further suggests 〈c + a〉 dissociation into three partials on the Pyramidal I plane is unlikely and 〈c〉 dissociation on Prism planes is unlikely to be stable against climb-dissociation onto the Basal planes in these metals.

  4. Taxonomy of multi-focal nematode image stacks by a CNN based image fusion approach.

    Science.gov (United States)

    Liu, Min; Wang, Xueping; Zhang, Hongzhong

    2018-03-01

    In the biomedical field, digital multi-focal images are very important for documentation and communication of specimen data, because the morphological information for a transparent specimen can be captured in form of a stack of high-quality images. Given biomedical image stacks containing multi-focal images, how to efficiently extract effective features from all layers to classify the image stacks is still an open question. We present to use a deep convolutional neural network (CNN) image fusion based multilinear approach for the taxonomy of multi-focal image stacks. A deep CNN based image fusion technique is used to combine relevant information of multi-focal images within a given image stack into a single image, which is more informative and complete than any single image in the given stack. Besides, multi-focal images within a stack are fused along 3 orthogonal directions, and multiple features extracted from the fused images along different directions are combined by canonical correlation analysis (CCA). Because multi-focal image stacks represent the effect of different factors - texture, shape, different instances within the same class and different classes of objects, we embed the deep CNN based image fusion method within a multilinear framework to propose an image fusion based multilinear classifier. The experimental results on nematode multi-focal image stacks demonstrated that the deep CNN image fusion based multilinear classifier can reach a higher classification rate (95.7%) than that by the previous multilinear based approach (88.7%), even we only use the texture feature instead of the combination of texture and shape features as in the previous work. The proposed deep CNN image fusion based multilinear approach shows great potential in building an automated nematode taxonomy system for nematologists. It is effective to classify multi-focal image stacks. Copyright © 2018 Elsevier B.V. All rights reserved.

  5. Prediction of residual stress distribution in multi-stacked thin film by curvature measurement and iterative FEA

    International Nuclear Information System (INIS)

    Choi, Hyeon Chang; Park, Jun Hyub

    2005-01-01

    In this study, residual stress distribution in multi-stacked film by MEMS (Micro-Electro Mechanical System) process is predicted using Finite Element Method (FEM). We develop a finite element program for REsidual Stress Analysis (RESA) in multi-stacked film. The RESA predicts the distribution of residual stress field in multi-stacked film. Curvatures of multi-stacked film and single layers which consist of the multi-stacked film are used as the input to the RESA. To measure those curvatures is easier than to measure a distribution of residual stress. To verify the RESA, mean stresses and stress gradients of single and multilayers are measured. The mean stresses are calculated from curvatures of deposited wafer by using Stoney's equation. The stress gradients are calculated from the vertical deflection at the end of cantilever beam. To measure the mean stress of each layer in multi-stacked film, we measure the curvature of wafer with the film after etching layer by layer in multi-stacked film

  6. Stacks of SPS Dipole Magnets

    CERN Multimedia

    1974-01-01

    Stacks of SPS Dipole Magnets ready for installation in the tunnel. The SPS uses a separated function lattice with dipoles for bending and quadrupoles for focusing. The 6.2 m long normal conducting dipoles are of H-type with coils that are bent-up at the ends. There are two types, B1 (total of 360) and B2 (384). Both are for a maximum field of 1.8 Tesla and have the same outer dimensions (450x800 mm2 vxh) but with different gaps (B1: 39x129 mm2, B2: 52x92 mm2) tailored to the beam size. The yoke, made of 1.5 mm thick laminations, consists of an upper and a lower half joined together in the median plane once the coils have been inserted.

  7. California dreaming?[PEM stacks

    Energy Technology Data Exchange (ETDEWEB)

    Crosse, J.

    2002-06-01

    Hyundai's Santa Fe FCEV will be on sale by the end of 2002. Hyundai uses PEM stacks that are manufactured by International Fuel Cells (IFC), a division of United Technologies. Santa Fe is equipped with a 65 kW electric powertrain of Enova systems and Shell's new gasoline reformer called Hydrogen Source. Eugene Jang, Senior Engineer - Fuel Cell and Materials at Hyundai stated that the compressor related losses on IFC system are below 3%. The maximum speed offered by the vehicle is estimated as 123km/hr while the petrol equivalent fuel consumption is quoted between 5.6L/100 km and 4.8L/100 km. Santa Fe is a compact vehicle offering better steering response and a pleasant drive. (author)

  8. Stacked multilayers of alternating reduced graphene oxide and carbon nanotubes for planar supercapacitors

    Science.gov (United States)

    Moon, Geon Dae; Joo, Ji Bong; Yin, Yadong

    2013-11-01

    A simple layer-by-layer approach has been developed for constructing 2D planar supercapacitors of multi-stacked reduced graphene oxide and carbon nanotubes. This sandwiched 2D architecture enables the full utilization of the maximum active surface area of rGO nanosheets by using a CNT layer as a porous physical spacer to enhance the permeation of a gel electrolyte inside the structure and reduce the agglomeration of rGO nanosheets along the vertical direction. As a result, the stacked multilayers of rGO and CNTs are capable of offering higher output voltage and current production.A simple layer-by-layer approach has been developed for constructing 2D planar supercapacitors of multi-stacked reduced graphene oxide and carbon nanotubes. This sandwiched 2D architecture enables the full utilization of the maximum active surface area of rGO nanosheets by using a CNT layer as a porous physical spacer to enhance the permeation of a gel electrolyte inside the structure and reduce the agglomeration of rGO nanosheets along the vertical direction. As a result, the stacked multilayers of rGO and CNTs are capable of offering higher output voltage and current production. Electronic supplementary information (ESI) available: Experimental details, SEM and TEM images and additional electrochemical data. See DOI: 10.1039/c3nr04339h

  9. The Subwavelength Optical Field Confinement in a Multilayered Microsphere with Quasiperiodic Spherical Stack

    Directory of Open Access Journals (Sweden)

    Gennadiy N. Burlak

    2008-01-01

    Full Text Available We study the frequency spectrum of nanoemitters placed in a microsphere with a quasiperiodic subwavelength spherical stack. The spectral evolution of transmittancy at the change of thickness of two-layer blocks, constructed following the Fibonacci sequence, is investigated. When the number of layers (Fibonacci order increases, the structure of spectrum acquires a fractal form. Our calculations show the radiation confinement and gigantic field enhancement, when the ratio of layers’ widths in twolayer blocks of the stack is close to the golden mean value.

  10. Multilayer Strip Dipole Antenna Using Stacking Technique and Its Application for Curved Surface

    Directory of Open Access Journals (Sweden)

    Charinsak Saetiaw

    2013-01-01

    Full Text Available This paper presents the design of multilayer strip dipole antenna by stacking a flexible copper-clad laminate utilized for curved surface on the cylindrical objects. The designed antenna will reduce the effects of curving based on relative lengths that are changed in each stacking flexible copper-clad laminate layer. Curving is different from each layer of the antenna, so the resonance frequency that resulted from an extended antenna provides better frequency response stability compared to modern antenna when it is curved or attached to cylindrical objects. The frequency of multilayer antenna is designed at 920 MHz for UHF RFID applications.

  11. Multi-Stacked Supported Lipid Bilayer Micropatterning through Polymer Stencil Lift-Off

    Directory of Open Access Journals (Sweden)

    Yujie Zhu

    2015-08-01

    Full Text Available Complex multi-lamellar structures play a critical role in biological systems, where they are present as lamellar bodies, and as part of biological assemblies that control energy transduction processes. Multi-lamellar lipid layers not only provide interesting systems for fundamental research on membrane structure and bilayer-associated polypeptides, but can also serve as components in bioinspired materials or devices. Although the ability to pattern stacked lipid bilayers at the micron scale is of importance for these purposes, limited work has been done in developing such patterning techniques. Here, we present a simple and direct approach to pattern stacked supported lipid bilayers (SLBs using polymer stencil lift-off and the electrostatic interactions between cationic and anionic lipids. Both homogeneous and phase-segregated stacked SLB patterns were produced, demonstrating that the stacked lipid bilayers retain lateral diffusivity. We demonstrate patterned SLB stacks of up to four bilayers, where fluorescence resonance energy transfer (FRET and quenching was used to probe the interactions between lipid bilayers. Furthermore, the study of lipid phase behaviour showed that gel phase domains align between adjacent layers. The proposed stacked SLB pattern platform provides a robust model for studying lipid behaviour with a controlled number of bilayers, and an attractive means towards building functional bioinspired materials or devices.

  12. Vector Fields and Flows on Differentiable Stacks

    DEFF Research Database (Denmark)

    A. Hepworth, Richard

    2009-01-01

    This paper introduces the notions of vector field and flow on a general differentiable stack. Our main theorem states that the flow of a vector field on a compact proper differentiable stack exists and is unique up to a uniquely determined 2-cell. This extends the usual result on the existence...... of vector fields....

  13. Project W-420 stack monitoring system upgrades

    International Nuclear Information System (INIS)

    CARPENTER, K.E.

    1999-01-01

    This project will execute the design, procurement, construction, startup, and turnover activities for upgrades to the stack monitoring system on selected Tank Waste Remediation System (TWRS) ventilation systems. In this plan, the technical, schedule, and cost baselines are identified, and the roles and responsibilities of project participants are defined for managing the Stack Monitoring System Upgrades, Project W-420

  14. 40 CFR 61.44 - Stack sampling.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 8 2010-07-01 2010-07-01 false Stack sampling. 61.44 Section 61.44 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) NATIONAL... Firing § 61.44 Stack sampling. (a) Sources subject to § 61.42(b) shall be continuously sampled, during...

  15. On the "stacking fault" in copper

    NARCIS (Netherlands)

    Fransens, J.R.; Pleiter, F

    2003-01-01

    The results of a perturbed gamma-gamma angular correlations experiment on In-111 implanted into a properly cut single crystal of copper show that the defect known in the literature as "stacking fault" is not a planar faulted loop but a stacking fault tetrahedron with a size of 10-50 Angstrom.

  16. Learning OpenStack networking (Neutron)

    CERN Document Server

    Denton, James

    2014-01-01

    If you are an OpenStack-based cloud operator with experience in OpenStack Compute and nova-network but are new to Neutron networking, then this book is for you. Some networking experience is recommended, and a physical network infrastructure is required to provide connectivity to instances and other network resources configured in the book.

  17. Status of MCFC stack technology at IHI

    Energy Technology Data Exchange (ETDEWEB)

    Hosaka, M.; Morita, T.; Matsuyama, T.; Otsubo, M. [Ishikawajima-Harima Heavy Industries Co., Ltd., Tokyo (Japan)

    1996-12-31

    The molten carbonate fuel cell (MCFC) is a promising option for highly efficient power generation possible to enlarge. IHI has been studying parallel flow MCFC stacks with internal manifolds that have a large electrode area of 1m{sup 2}. IHI will make two 250 kW stacks for MW plant, and has begun to make cell components for the plant. To improve the stability of stack, soft corrugated plate used in the separator has been developed, and a way of gathering current from stacks has been studied. The DC output potential of the plant being very high, the design of electric insulation will be very important. A 20 kW short stack test was conducted in 1995 FY to certificate some of the improvements and components of the MW plant. These activities are presented below.

  18. Modular fuel-cell stack assembly

    Science.gov (United States)

    Patel, Pinakin

    2010-07-13

    A fuel cell assembly having a plurality of fuel cells arranged in a stack. An end plate assembly abuts the fuel cell at an end of said stack. The end plate assembly has an inlet area adapted to receive an exhaust gas from the stack, an outlet area and a passage connecting the inlet area and outlet area and adapted to carry the exhaust gas received at the inlet area from the inlet area to the outlet area. A further end plate assembly abuts the fuel cell at a further opposing end of the stack. The further end plate assembly has a further inlet area adapted to receive a further exhaust gas from the stack, a further outlet area and a further passage connecting the further inlet area and further outlet area and adapted to carry the further exhaust gas received at the further inlet area from the further inlet area to the further outlet area.

  19. Probing Temperature Inside Planar SOFC Short Stack, Modules, and Stack Series

    Science.gov (United States)

    Yu, Rong; Guan, Wanbing; Zhou, Xiao-Dong

    2017-02-01

    Probing temperature inside a solid oxide fuel cell (SOFC) stack lies at the heart of the development of high-performance and stable SOFC systems. In this article, we report our recent work on the direct measurements of the temperature in three types of SOFC systems: a 5-cell short stack, a 30-cell stack module, and a stack series consisting of two 30-cell stack modules. The dependence of temperature on the gas flow rate and current density was studied under a current sweep or steady-state operation. During the current sweep, the temperature inside the 5-cell stack decreased with increasing current, while it increased significantly at the bottom and top of the 30-cell stack. During a steady-state operation, the temperature of the 5-cell stack was stable while it was increased in the 30-cell stack. In the stack series, the maximum temperature gradient reached 190°C when the gas was not preheated. If the gas was preheated and the temperature gradient was reduced to 23°C in the stack series with the presence of a preheating gas and segmented temperature control, this resulted in a low degradation rate.

  20. Report on radiation exposure of lead-scintillator stack

    International Nuclear Information System (INIS)

    Underwood, D.G.

    1990-01-01

    A stack of lead and scintillator was placed in a neutral beam obtained from targeting 800 GeV protons. Small pieces of film containing radiochromic dye were placed adjacent to the layers of scintillator for the purpose of measuring the radiation dose to the scintillator. Our motivation was to calibrate the radiation dose obtainable in this manner for future tests of scintillator for SSC experiments and to relate dose to flux to check absolute normalization for calculations. We also observed several other radiation effects which should be considered for both damage and compensation in a calorimeter

  1. The impact of stack geometry and mean pressure on cold end temperature of stack in thermoacoustic refrigeration systems

    Science.gov (United States)

    Wantha, Channarong

    2018-02-01

    This paper reports on the experimental and simulation studies of the influence of stack geometries and different mean pressures on the cold end temperature of the stack in the thermoacoustic refrigeration system. The stack geometry was tested, including spiral stack, circular pore stack and pin array stack. The results of this study show that the mean pressure of the gas in the system has a significant impact on the cold end temperature of the stack. The mean pressure of the gas in the system corresponds to thermal penetration depth, which results in a better cold end temperature of the stack. The results also show that the cold end temperature of the pin array stack decreases more than that of the spiral stack and circular pore stack geometry by approximately 63% and 70%, respectively. In addition, the thermal area and viscous area of the stack are analyzed to explain the results of such temperatures of thermoacoustic stacks.

  2. Stacking faults and phase changes in Mg-doped InGaN grown on Si

    International Nuclear Information System (INIS)

    Liliental-Weber, Zuzanna; Yu, Kin M.; Reichertz, Lothar A.; Ager, Joel W.; Walukiewicz, Wladek; Schaff, William J.; Hawkridge, Michael E.

    2009-01-01

    We report evidence for the role of Mg in the formation of basal stacking faults and a phase transition in In x Ga 1-x N layers doped with Mg grown by molecular beam epitaxy on Si(111) substrates with AlN buffer layers. Several samples with varying In content between x∝0.1 and x∝0.3 are examined by transmission electron microscopy and other techniques. High densities of basal stacking faults are observed in the central region of the InGaN layer away from the substrate or layer surface, but at varying depths within this region. Selected area diffraction patterns show that while the InGaN layer is initially in the wurtzite phase (and of good quality) AlN buffer layer, there is a change to the zinc blende phase in the upper part of the InGaN layer. SIMS measurements show that the Mg concentration drops from a maximum to a steady concentration coinciding with the presence of the basal stacking faults. There is little change in In or Ga concentrations in the same area. High-resolution electron microscopy from the area of the stacking faults confirms that the change to the cubic phase is abrupt across one such fault. These results indicate that Mg plays a role in the formation of stacking faults and the phase change observed in In x Ga 1-x N alloys. We also consider the role of In in the formation of these defects. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Five stacks over the Danube

    International Nuclear Information System (INIS)

    Anon.

    1998-01-01

    Following the departure of Communism, Hungary adopted the most ambitious privatisation programme of all the eastern European countries. Within a year the state electricity company, MVM, and the oil and gas company, MOL, were prepared for sale and a consequent injection of foreign capital. Control of prices by central government inhibited investment initially but a new legal framework put in place in 1995 introduced a pricing regime more attractive to external investors. Particular interest was shown in the 2,200MW mixed heavy oil and natural gas power plant at Dunamenti on the Danube, characterised by its five stacks of varying height which reflect the changing technology employed at the plant. The bid was won by Tractabel of Belgium who have been highly successful in improving plant efficiency. However, the impact of privatisation is now being felt in uncertainty over fuel supply. Removing such uncertainty in order to maintain existing investment and provide the additional 4000MW of generating capacity needed to keep pace with demand, is a major problem which the incoming government faces. (UK)

  4. Multiple Segmentation of Image Stacks

    DEFF Research Database (Denmark)

    Smets, Jonathan; Jaeger, Manfred

    2014-01-01

    We propose a method for the simultaneous construction of multiple image segmentations by combining a recently proposed “convolution of mixtures of Gaussians” model with a multi-layer hidden Markov random field structure. The resulting method constructs for a single image several, alternative...

  5. Density of oxidation-induced stacking faults in damaged silicon

    NARCIS (Netherlands)

    Kuper, F.G.; Hosson, J.Th.M. De; Verwey, J.F.

    1986-01-01

    A model for the relation between density and length of oxidation-induced stacking faults on damaged silicon surfaces is proposed, based on interactions of stacking faults with dislocations and neighboring stacking faults. The model agrees with experiments.

  6. Stacking change in MoS2 bilayers induced by interstitial Mo impurities.

    Science.gov (United States)

    Cortés, Natalia; Rosales, Luis; Orellana, Pedro A; Ayuela, Andrés; González, Jhon W

    2018-02-01

    We use a theoretical approach to reveal the electronic and structural properties of molybdenum impurities between MoS 2 bilayers. We find that interstitial Mo impurities are able to reverse the well-known stability order of the pristine bilayer, because the most stable form of stacking changes from AA' (undoped) into AB' (doped). The occurrence of Mo impurities in different positions shows their split electronic levels in the energy gap, following octahedral and tetrahedral crystal fields. The energy stability is related to the accommodation of Mo impurities compacted in hollow sites between layers. Other less stable configurations for Mo dopants have larger interlayer distances and band gaps than those for the most stable stacking. Our findings suggest possible applications such as exciton trapping in layers around impurities, and the control of bilayer stacking by Mo impurities in the growth process.

  7. Omnidirectional mirror based on Bragg stacks with a periodic gain-loss modulation

    International Nuclear Information System (INIS)

    Manzanares-Martinez, Jesus; Ham-Rodriguez, Carlos Ivan; Moctezuma-Enriquez, Damian; Manzanares-Martinez, Betsabe

    2014-01-01

    In this work we demonstrate that a Bragg Stack with a periodic gain-loss modulation can function as an Omnidirectional Mirror (OM) with complete reflection at any angle of incidence irrespective of the light polarization. The Bragg Stack is composed by the periodic variation of two layers with the same value of the real part of the refractive index (n r ) and a periodic modulation in the imaginary part (n i ). The origin of the band gaps is due to the interference of complex waves with propagating and evanescent fields in each layer. It is found that the band gaps are wider as the contrast n i /n r increases. We have found the ambient conditions to obtain an OM considering an auxiliary medium n ′ external to the Bragg Stack

  8. Omnidirectional mirror based on Bragg stacks with a periodic gain-loss modulation

    Energy Technology Data Exchange (ETDEWEB)

    Manzanares-Martinez, Jesus; Ham-Rodriguez, Carlos Ivan [Departamento de Investigacion en Fisica, Universidad de Sonora, Apartado Postal 5-088, Hermosillo, Sonora 83000 (Mexico); Moctezuma-Enriquez, Damian, E-mail: foxonicos@gmail.com [Centro de Investigacion en Materiales Avanzados (CIMAV), Miguel de Cervantes 120, Chihuahua 31109 (Mexico); Manzanares-Martinez, Betsabe [Departamento de Fisica, Universidad de Sonora, Blvd. Luis Encinas y Rosales, Hermosillo, Sonora 83000 (Mexico)

    2014-01-15

    In this work we demonstrate that a Bragg Stack with a periodic gain-loss modulation can function as an Omnidirectional Mirror (OM) with complete reflection at any angle of incidence irrespective of the light polarization. The Bragg Stack is composed by the periodic variation of two layers with the same value of the real part of the refractive index (n{sub r}) and a periodic modulation in the imaginary part (n{sub i}). The origin of the band gaps is due to the interference of complex waves with propagating and evanescent fields in each layer. It is found that the band gaps are wider as the contrast n{sub i}/n{sub r} increases. We have found the ambient conditions to obtain an OM considering an auxiliary medium n{sup ′} external to the Bragg Stack.

  9. Dynamical stability of slip-stacking particles

    Energy Technology Data Exchange (ETDEWEB)

    Eldred, Jeffrey; Zwaska, Robert

    2014-09-01

    We study the stability of particles in slip-stacking configuration, used to nearly double proton beam intensity at Fermilab. We introduce universal area factors to calculate the available phase space area for any set of beam parameters without individual simulation. We find perturbative solutions for stable particle trajectories. We establish Booster beam quality requirements to achieve 97% slip-stacking efficiency. We show that slip-stacking dynamics directly correspond to the driven pendulum and to the system of two standing-wave traps moving with respect to each other.

  10. Text-Filled Stacked Area Graphs

    DEFF Research Database (Denmark)

    Kraus, Martin

    2011-01-01

    -filled stacked area graphs; i.e., graphs that feature stacked areas that are filled with small-typed text. Since these graphs allow for computing the text layout automatically, it is possible to include large amounts of textual detail with very little effort. We discuss the most important challenges and some...... solutions for the design of text-filled stacked area graphs with the help of an exemplary visualization of the genres, publication years, and titles of a database of several thousand PC games....

  11. Tunable electro-optic filter stack

    Science.gov (United States)

    Fontecchio, Adam K.; Shriyan, Sameet K.; Bellingham, Alyssa

    2017-09-05

    A holographic polymer dispersed liquid crystal (HPDLC) tunable filter exhibits switching times of no more than 20 microseconds. The HPDLC tunable filter can be utilized in a variety of applications. An HPDLC tunable filter stack can be utilized in a hyperspectral imaging system capable of spectrally multiplexing hyperspectral imaging data acquired while the hyperspectral imaging system is airborne. HPDLC tunable filter stacks can be utilized in high speed switchable optical shielding systems, for example as a coating for a visor or an aircraft canopy. These HPDLC tunable filter stacks can be fabricated using a spin coating apparatus and associated fabrication methods.

  12. Electrochemistry at the edge of a single graphene layer in a nanopore

    DEFF Research Database (Denmark)

    Banerjee, Sutanuka; Shim, Jeong; Rivera, J.

    2013-01-01

    We study the electrochemistry of single layer graphene edges using a nanopore-based structure consisting of stacked graphene and AlO dielectric layers. Nanopores, with diameters ranging from 5 to 20 nm, are formed by an electron beam sculpting process on the stacked layers. This leads to a unique...

  13. Identity federation in OpenStack - an introduction to hybrid clouds

    Science.gov (United States)

    Denis, Marek; Castro Leon, Jose; Ormancey, Emmanuel; Tedesco, Paolo

    2015-12-01

    We are evaluating cloud identity federation available in the OpenStack ecosystem that allows for on premise bursting into remote clouds with use of local identities (i.e. domain accounts). Further enhancements to identity federation are a clear way to hybrid cloud architectures - virtualized infrastructures layered across independent private and public clouds.

  14. Characterization of Piezoelectric Stacks for Space Applications

    Science.gov (United States)

    Sherrit, Stewart; Jones, Christopher; Aldrich, Jack; Blodget, Chad; Bao, Xiaoqi; Badescu, Mircea; Bar-Cohen, Yoseph

    2008-01-01

    Future NASA missions are increasingly seeking to actuate mechanisms to precision levels in the nanometer range and below. Co-fired multilayer piezoelectric stacks offer the required actuation precision that is needed for such mechanisms. To obtain performance statistics and determine reliability for extended use, sets of commercial PZT stacks were tested in various AC and DC conditions at both nominal and high temperatures and voltages. In order to study the lifetime performance of these stacks, five actuators were driven sinusoidally for up to ten billion cycles. An automated data acquisition system was developed and implemented to monitor each stack's electrical current and voltage waveforms over the life of the test. As part of the monitoring tests, the displacement, impedance, capacitance and leakage current were measured to assess the operation degradation. This paper presents some of the results of this effort.

  15. The stack on software and sovereignty

    CERN Document Server

    Bratton, Benjamin H

    2016-01-01

    A comprehensive political and design theory of planetary-scale computation proposing that The Stack -- an accidental megastructure -- is both a technological apparatus and a model for a new geopolitical architecture.

  16. Development of Auto-Stacking Warehouse Truck

    Directory of Open Access Journals (Sweden)

    Kuo-Hsien Hsia

    2018-03-01

    Full Text Available Warehouse automation is a very important issue for the promotion of traditional industries. For the production of larger and stackable products, it is usually necessary to operate a fork-lifter for the stacking and storage of the products by a skilled person. The general autonomous warehouse-truck does not have the ability of stacking objects. In this paper, we develop a prototype of auto-stacking warehouse-truck that can work without direct operation by a skill person. With command made by an RFID card, the stacker truck can take the packaged product to the warehouse on the prior-planned route and store it in a stacking way in the designated storage area, or deliver the product to the shipping area or into the container from the storage area. It can significantly reduce the manpower requirements of the skilled-person of forklift technician and improve the safety of the warehousing area.

  17. Engineering the hypersonic phononic band gap of hybrid Bragg stacks.

    Science.gov (United States)

    Schneider, Dirk; Liaqat, Faroha; El Boudouti, El Houssaine; El Hassouani, Youssef; Djafari-Rouhani, Bahram; Tremel, Wolfgang; Butt, Hans-Jürgen; Fytas, George

    2012-06-13

    We report on the full control of phononic band diagrams for periodic stacks of alternating layers of poly(methyl methacrylate) and porous silica combining Brillouin light scattering spectroscopy and theoretical calculations. These structures exhibit large and robust on-axis band gaps determined by the longitudinal sound velocities, densities, and spacing ratio. A facile tuning of the gap width is realized at oblique incidence utilizing the vector nature of the elastic wave propagation. Off-axis propagation involves sagittal waves in the individual layers, allowing access to shear moduli at nanoscale. The full theoretical description discerns the most important features of the hypersonic one-dimensional crystals forward to a detailed understanding, a precondition to engineer dispersion relations in such structures.

  18. Exploring online evolution of network stacks

    OpenAIRE

    Imai, Pierre

    2013-01-01

    Network stacks today follow a one-size-fits-all philosophy. They are mostly kept unmodified due to often prohibitive costs of engineering, deploying and administrating customisation of the networking software, with the Internet stack architecture still largely being based on designs and assumptions made for the ARPANET 40 years ago. We venture that heterogeneous and rapidly changing networks of the future require, in order to be successful, run-time self-adaptation mechanisms at different tim...

  19. Analytical model of surface potential profiles and transfer characteristics for hetero stacked tunnel field-effect transistors

    Science.gov (United States)

    Xu, Hui Fang; Sun, Wen; Han, Xin Feng

    2018-06-01

    An analytical model of surface potential profiles and transfer characteristics for hetero stacked tunnel field-effect transistors (HS-TFETs) is presented for the first time, where hetero stacked materials are composed of two different bandgaps. The bandgap of the underlying layer is smaller than that of the upper layer. Under different device parameters (upper layer thickness, underlying layer thickness, and hetero stacked materials) and temperature, the validity of the model is demonstrated by the agreement of its results with the simulation results. Moreover, the results show that the HS-TFETs can obtain predominant performance with relatively slow changes of subthreshold swing (SS) over a wide drain current range, steep average subthreshold swing, high on-state current, and large on–off state current ratio.

  20. Enhancement of mechanical and electrical properties of continuous-fiber-reinforced epoxy composites with stacked graphene

    OpenAIRE

    Naveh, Naum; Shepelev, Olga; Kenig, Samuel

    2017-01-01

    Impregnation of expandable graphite (EG) after thermal treatment with an epoxy resin containing surface-active agents (SAAs) enhanced the intercalation of epoxy monomer between EG layers and led to further exfoliation of the graphite, resulting in stacks of few graphene layers, so-called “stacked” graphene (SG). This process enabled electrical conductivity of cured epoxy/SG composites at lower percolation thresholds, and improved thermo-mechanical properties were measured with either Kevlar, ...

  1. P-111 : a thin film encapsulation stack for PLED and OLED displays

    NARCIS (Netherlands)

    Assche, van F.J.H.; Vangheluwe, R.T.; Maes, J.W.C.; Mischke, W.S.; Bijker, M.D.; Dings, F.C.; Evers, M.F.J.; Kessels, W.M.M.; Sanden, van de M.C.M.

    2004-01-01

    For a thin film (<1 µm) encapsulation stack consisting of only 3 plasma deposited silicon nitride layers separated by a thin (<100 nm) organic layer, a water permeation rate of below 10–5 g/m2 per day at 50 °C and 50% rH has been measured using the Ca test. PLED lifetimes of over 500 hours at 60 °C

  2. Stacking fault density and bond orientational order of fcc ruthenium nanoparticles

    Science.gov (United States)

    Seo, Okkyun; Sakata, Osami; Kim, Jae Myung; Hiroi, Satoshi; Song, Chulho; Kumara, Loku Singgappulige Rosantha; Ohara, Koji; Dekura, Shun; Kusada, Kohei; Kobayashi, Hirokazu; Kitagawa, Hiroshi

    2017-12-01

    We investigated crystal structure deviations of catalytic nanoparticles (NPs) using synchrotron powder X-ray diffraction. The samples were fcc ruthenium (Ru) NPs with diameters of 2.4, 3.5, 3.9, and 5.4 nm. We analyzed average crystal structures by applying the line profile method to a stacking fault model and local crystal structures using bond orientational order (BOO) parameters. The reflection peaks shifted depending on rules that apply to each stacking fault. We evaluated the quantitative stacking faults densities for fcc Ru NPs, and the stacking fault per number of layers was 2-4, which is quite large. Our analysis shows that the fcc Ru 2.4 nm-diameter NPs have a considerably high stacking fault density. The B factor tends to increase with the increasing stacking fault density. A structural parameter that we define from the BOO parameters exhibits a significant difference from the ideal value of the fcc structure. This indicates that the fcc Ru NPs are highly disordered.

  3. Investigation of Ruthenium Dissolution in Advanced Membrane Electrode Assemblies for Direct Methanol Based Fuel Cell Stacks

    Science.gov (United States)

    Valdez, Thomas I.; Firdosy, S.; Koel, B. E.; Narayanan, S. R.

    2005-01-01

    Dissolution of ruthenium was observed in the 80-cell stack. Duration testing was performed in single cell MEAs to determine the pathway of cell degradation. EDAX analysis on each of the single cell MEAs has shown that the Johnson Matthey commercial catalyst is stable in DMFC operation for 250 hours, no ruthenium dissolution was observed. Changes in the hydrophobicity of the cathode backing papers was minimum. Electrode polarization analysis revealed that the MEA performance loss is attributed to changes in the cathode catalyst layer. Ruthenium migration does not seem to occur during cell operation but can occur when methanol is absent from the anode compartment, the cathode compartment has access to air, and the cells in the stack are electrically connected to a load (Shunt Currents). The open-to-air cathode stack design allowed for: a) The MEAs to have continual access to oxygen; and b) The stack to sustain shunt currents. Ruthenium dissolution in a DMFC stack can be prevented by: a) Developing an internally manifolded stacks that seal reactant compartments when not in operation; b) Bringing the cell voltages to zero quickly when not in operation; and c) Limiting the total number of cells to 25 in an effort to limit shunt currents.

  4. A Time-predictable Stack Cache

    DEFF Research Database (Denmark)

    Abbaspour, Sahar; Brandner, Florian; Schoeberl, Martin

    2013-01-01

    Real-time systems need time-predictable architectures to support static worst-case execution time (WCET) analysis. One architectural feature, the data cache, is hard to analyze when different data areas (e.g., heap allocated and stack allocated data) share the same cache. This sharing leads to le...... of a cache for stack allocated data. Our port of the LLVM C++ compiler supports the management of the stack cache. The combination of stack cache instructions and the hardware implementation of the stack cache is a further step towards timepredictable architectures.......Real-time systems need time-predictable architectures to support static worst-case execution time (WCET) analysis. One architectural feature, the data cache, is hard to analyze when different data areas (e.g., heap allocated and stack allocated data) share the same cache. This sharing leads to less...... precise results of the cache analysis part of the WCET analysis. Splitting the data cache for different data areas enables composable data cache analysis. The WCET analysis tool can analyze the accesses to these different data areas independently. In this paper we present the design and implementation...

  5. StackGAN++: Realistic Image Synthesis with Stacked Generative Adversarial Networks

    OpenAIRE

    Zhang, Han; Xu, Tao; Li, Hongsheng; Zhang, Shaoting; Wang, Xiaogang; Huang, Xiaolei; Metaxas, Dimitris

    2017-01-01

    Although Generative Adversarial Networks (GANs) have shown remarkable success in various tasks, they still face challenges in generating high quality images. In this paper, we propose Stacked Generative Adversarial Networks (StackGAN) aiming at generating high-resolution photo-realistic images. First, we propose a two-stage generative adversarial network architecture, StackGAN-v1, for text-to-image synthesis. The Stage-I GAN sketches the primitive shape and colors of the object based on given...

  6. Spatial walk-off compensated beta-barium borate stack for efficient deep-UV generation

    Science.gov (United States)

    Li, Da; Lee, Huai-Chuan; Meissner, Stephanie K.; Meissner, Helmuth E.

    2018-02-01

    Beta-Barium Borate (β-BBO) crystal is commonly used in nonlinear frequency conversion from visible to deep ultraviolet (DUV). However, in a single crystal BBO, its large spatial walk-off effect will reduce spatial overlap of ordinary and extraordinary beam, and thus degrade the conversion efficiency. To overcome the restrictions in current DUV conversion systems, Onyx applies adhesive-free bonding technique to replace the single crystal BBO with a spatial Walk-off Compensated (WOC) BBO stack, which is capable of correcting the spatial walk-off while retaining a constant nonlinear coefficient in the adjacent bonding layers. As a result, the β-BBO stack will provide good beam quality, high conversion efficiency, and broader acceptance angle and spectral linewidth, when compared with a single crystal of BBO. In this work, we report on performance of a spatial walk-off compensated β-BBO stack with adhesive-free bonding technique, for efficiently converting from the visible to DUV range. The physics behind the WOC BBO stack are demonstrated, followed by simulation of DUV conversion efficiency in an external resonance cavity. We also demonstrate experimentally the beam quality improvement in a 4-layer WOC BBO stack over a single BBO crystal.

  7. Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

    International Nuclear Information System (INIS)

    Kita, Takashi; Suwa, Masaya; Kaizu, Toshiyuki; Harada, Yukihiro

    2014-01-01

    The polarized optical gain characteristics of highly stacked InAs/GaAs quantum dots (QDs) with a thin spacer layer fabricated on an n + -GaAs (001) substrate were studied in the sub-threshold gain region. Using a 4.0-nm-thick spacer layer, we realized an electronically coupled QD superlattice structure along the stacking direction, which enabled the enhancement of the optical gain of the [001] transverse-magnetic (TM) polarization component. We systematically studied the polarized electroluminescence properties of laser devices containing 30 and 40 stacked InAs/GaAs QDs. The net modal gain was analyzed using the Hakki-Paoli method. Owing to the in-plane shape anisotropy of QDs, the polarization sensitivity of the gain depends on the waveguide direction. The gain showing polarization isotropy between the TM and transverse-electric polarization components is high for the [110] waveguide structure, which occurs for higher amounts of stacked QDs. Conversely, the isotropy of the [−110] waveguide is easily achieved even if the stacking is relatively low, although the gain is small.

  8. Role of SiC substrate surface on local tarnishing of deposited silver mirror stacks

    Science.gov (United States)

    Limam, Emna; Maurice, Vincent; Seyeux, Antoine; Zanna, Sandrine; Klein, Lorena H.; Chauveau, Grégory; Grèzes-Besset, Catherine; Savin De Larclause, Isabelle; Marcus, Philippe

    2018-04-01

    The role of the SiC substrate surface on the resistance to the local initiation of tarnishing of thin-layered silver stacks for demanding space mirror applications was studied by combined surface and interface analysis on model stack samples deposited by cathodic magnetron sputtering and submitted to accelerated aging in gaseous H2S. It is shown that suppressing the surface pores resulting from the bulk SiC material production process by surface pretreatment eliminates the high aspect ratio surface sites that are imperfectly protected by the SiO2 overcoat after the deposition of silver. The formation of channels connecting the silver layer to its environment through the failing protection layer at the surface pores and locally enabling H2S entry and Ag2S growth as columns until emergence at the stack surface is suppressed, which markedly delays tarnishing initiation and thereby preserves the optical performance. The results revealed that residual tarnishing initiation proceeds by a mechanism essentially identical in nature but involving different pathways short circuiting the protection layer and enabling H2S ingress until the silver layer. These permeation pathways are suggested to be of microstructural origin and could correspond to the incompletely coalesced intergranular boundaries of the SiO2 layer.

  9. Origin of colour stability in blue/orange/blue stacked phosphorescent white organic light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, Sung Hyun; Jang, Jyongsik; Yook, Kyoung Soo; Lee, Jun Yeob

    2009-01-01

    The origin of colour stability in phosphorescent white organic light-emitting diodes (PHWOLEDs) with a blue/orange/blue stacked emitting structure was studied by monitoring the change in a recombination zone. A balanced recombination zone shift between the blue and the orange light-emitting layers was found to be responsible for the colour stability in the blue/orange/blue stacked PHWOLEDs.

  10. Defining the stack for service delivery models and interoperability in the internet of things: A practical case with OpenIoT-VDK

    OpenAIRE

    Serrano, M.; Quoc, H.N.M.; Phuoc, D.L.; Hauswirth, M.; Soldatos, J.; Kefalakis, N.; Jayaraman, P.P.; Zaslavsky, A.

    2015-01-01

    This paper introduces the stack for service delivery models and interoperability in the Internet of Things. The main characteristics and functional layers of the IoT stack are described. The applicability of the IoT stack is described based on particular use cases and deployed pilots. The validation of the IoT stack in terms of functionality and adaptation at different IoT particular areas is based on the Virtual Development Kit (VDK) developed and implemented within the framework of the Open...

  11. Start-Stop Test Procedures on the PEMFC Stack Level

    DEFF Research Database (Denmark)

    Mitzel, Jens; Nygaard, Frederik; Veltzé, Sune

    The test is addressed to investigate the influence on stack durability of a long stop followed by a restart of a stack. Long stop should be defined as a stop in which the anodic compartment is fully filled by air due to stack leakages. In systems, leakage level of the stack is low and time to fil...

  12. Principles for Instructional Stack Development in HyperCard.

    Science.gov (United States)

    McEneaney, John E.

    The purpose of this paper is to provide information about obtaining and using HyperCard stacks that introduce users to principles of stack development. The HyperCard stacks described are available for downloading free of charge from a server at Indiana University South Bend. Specific directions are given for stack use, with advice for beginners. A…

  13. Initiation and Performance of a Coating for Countering Chromium Poisoning in a SOFC-stack

    DEFF Research Database (Denmark)

    Nielsen, Karsten Agersted; Persson, Åsa Helen; Beeaff, Dustin

    2007-01-01

    Minimising transport of chromium from the metallic interconnect (e.g. of Crofer 22APU) to the cathode in a planar solid oxide fuel cell is done by application of a coating between the two parts. The coating is applied by slurry coating, and taken through stack initialisation it transforms...... into a stable and densely grown barrier layer, which minimises both the evaporation of chromium from the interconnect surface and the electrical contact resistance between the interconnect and the cathode. Between comparable stack element tests with and without coatings at 750 degrees C, the degradation rate...

  14. Search for the in-phase Flux Flow mode in stacked Josephson junctions

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Madsen, Søren Peder

    2006-01-01

    Josephson vortex flux flow states in stacked Josephson junctions are investigated numerically. The aim of the work is to understand the mechanisms behind the formation of triangular (anti-phase) and square (in-phase) vortex lattices, and is motivated by recent experiments on layered BSCCO type high......-T-c superconductors in a magnetic field. In order to keep the problem as simple as possible we consider in detail only the case with two junctions in the stack. (c) 2006 Elsevier B.V. All rights reserved....

  15. A long-term stable power supply μDMFC stack for wireless sensor node applications

    International Nuclear Information System (INIS)

    Wu, Z L; Wang, X H; Teng, F; Li, X Z; Wu, X M; Liu, L T

    2013-01-01

    A passive, air-breathing 4-cell micro direct methanol fuel cell (μDMFC) stack is presented featured by a fuel delivery structure for a long-term and stable power supply. The fuel is reserved in a T shape tank and diffuses through the porous diffusion layer to the catalyst at anode. The stack has a maximum power output of 110mW with 3M methanol at room temperature and output a stable power even thought 5% fuel is the remained in reservoir. Its performance decreases less than 3% for 100 hours continuous work. As such, it is believed to be more applicable for powering the wireless sensor nodes

  16. 3D tissue formation by stacking detachable cell sheets formed on nanofiber mesh.

    Science.gov (United States)

    Kim, Min Sung; Lee, Byungjun; Kim, Hong Nam; Bang, Seokyoung; Yang, Hee Seok; Kang, Seong Min; Suh, Kahp-Yang; Park, Suk-Hee; Jeon, Noo Li

    2017-03-23

    We present a novel approach for assembling 3D tissue by layer-by-layer stacking of cell sheets formed on aligned nanofiber mesh. A rigid frame was used to repeatedly collect aligned electrospun PCL (polycaprolactone) nanofiber to form a mesh structure with average distance between fibers 6.4 µm. When human umbilical vein endothelial cells (HUVECs), human foreskin dermal fibroblasts, and skeletal muscle cells (C2C12) were cultured on the nanofiber mesh, they formed confluent monolayers and could be handled as continuous cell sheets with areas 3 × 3 cm 2 or larger. Thicker 3D tissues have been formed by stacking multiple cell sheets collected on frames that can be nested (i.e. Matryoshka dolls) without any special tools. When cultured on the nanofiber mesh, skeletal muscle, C2C12 cells oriented along the direction of the nanofibers and differentiated into uniaxially aligned multinucleated myotube. Myotube cell sheets were stacked (upto 3 layers) in alternating or aligned directions to form thicker tissue with ∼50 µm thickness. Sandwiching HUVEC cell sheets with two dermal fibroblast cell sheets resulted in vascularized 3D tissue. HUVECs formed extensive networks and expressed CD31, a marker of endothelial cells. Cell sheets formed on nanofiber mesh have a number of advantages, including manipulation and stacking of multiple cell sheets for constructing 3D tissue and may find applications in a variety of tissue engineering applications.

  17. EmuStack: An OpenStack-Based DTN Network Emulation Platform (Extended Version

    Directory of Open Access Journals (Sweden)

    Haifeng Li

    2016-01-01

    Full Text Available With the advancement of computing and network virtualization technology, the networking research community shows great interest in network emulation. Compared with network simulation, network emulation can provide more relevant and comprehensive details. In this paper, EmuStack, a large-scale real-time emulation platform for Delay Tolerant Network (DTN, is proposed. EmuStack aims at empowering network emulation to become as simple as network simulation. Based on OpenStack, distributed synchronous emulation modules are developed to enable EmuStack to implement synchronous and dynamic, precise, and real-time network emulation. Meanwhile, the lightweight approach of using Docker container technology and network namespaces allows EmuStack to support a (up to hundreds of nodes large-scale topology with only several physical nodes. In addition, EmuStack integrates the Linux Traffic Control (TC tools with OpenStack for managing and emulating the virtual link characteristics which include variable bandwidth, delay, loss, jitter, reordering, and duplication. Finally, experiences with our initial implementation suggest the ability to run and debug experimental network protocol in real time. EmuStack environment would bring qualitative change in network research works.

  18. Forced Air-Breathing PEMFC Stacks

    Directory of Open Access Journals (Sweden)

    K. S. Dhathathreyan

    2012-01-01

    Full Text Available Air-breathing fuel cells have a great potential as power sources for various electronic devices. They differ from conventional fuel cells in which the cells take up oxygen from ambient air by active or passive methods. The air flow occurs through the channels due to concentration and temperature gradient between the cell and the ambient conditions. However developing a stack is very difficult as the individual cell performance may not be uniform. In order to make such a system more realistic, an open-cathode forced air-breathing stacks were developed by making appropriate channel dimensions for the air flow for uniform performance in a stack. At CFCT-ARCI (Centre for Fuel Cell Technology-ARC International we have developed forced air-breathing fuel cell stacks with varying capacity ranging from 50 watts to 1500 watts. The performance of the stack was analysed based on the air flow, humidity, stability, and so forth, The major advantage of the system is the reduced number of bipolar plates and thereby reduction in volume and weight. However, the thermal management is a challenge due to the non-availability of sufficient air flow to remove the heat from the system during continuous operation. These results will be discussed in this paper.

  19. Thin film photovoltaic devices with a minimally conductive buffer layer

    Science.gov (United States)

    Barnes, Teresa M.; Burst, James

    2016-11-15

    A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

  20. Simplified design of thin-film polarizing beam splitter using embedded symmetric trilayer stack.

    Science.gov (United States)

    Azzam, R M A

    2011-07-01

    An analytically tractable design procedure is presented for a polarizing beam splitter (PBS) that uses frustrated total internal reflection and optical tunneling by a symmetric LHL trilayer thin-film stack embedded in a high-index prism. Considerable simplification arises when the refractive index of the high-index center layer H matches the refractive index of the prism and its thickness is quarter-wave. This leads to a cube design in which zero reflection for the p polarization is achieved at a 45° angle of incidence independent of the thicknesses of the identical symmetric low-index tunnel layers L and L. Arbitrarily high reflectance for the s polarization is obtained at subwavelength thicknesses of the tunnel layers. This is illustrated by an IR Si-cube PBS that uses an embedded ZnS-Si-ZnS trilayer stack.

  1. Progress of MCFC stack technology at Toshiba

    Energy Technology Data Exchange (ETDEWEB)

    Hori, M.; Hayashi, T.; Shimizu, Y. [Toshiba Corp., Tokyo (Japan)

    1996-12-31

    Toshiba is working on the development of MCFC stack technology; improvement of cell characteristics, and establishment of separator technology. For the cell technology, Toshiba has concentrated on both the restraints of NiO cathode dissolution and electrolyte loss from cells, which are the critical issues to extend cell life in MCFC, and great progress has been made. On the other hand, recognizing that the separator is one of key elements in accomplishing reliable and cost-competitive MCFC stacks, Toshiba has been accelerating the technology establishment and verification of an advanced type separator. A sub-scale stack with such a separator was provided for an electric generating test, and has been operated for more than 10,000 hours. This paper presents several topics obtained through the technical activities in the MCFC field at Toshiba.

  2. Detailed Electrochemical Characterisation of Large SOFC Stacks

    DEFF Research Database (Denmark)

    Mosbæk, Rasmus Rode; Hjelm, Johan; Barfod, R.

    2012-01-01

    application of advanced methods for detailed electrochemical characterisation during operation. An operating stack is subject to steep compositional gradients in the gaseous reactant streams, and significant temperature gradients across each cell and across the stack, which makes it a complex system...... Fuel Cell A/S was characterised in detail using electrochemical impedance spectroscopy. An investigation of the optimal geometrical placement of the current probes and voltage probes was carried out in order to minimise measurement errors caused by stray impedances. Unwanted stray impedances...... are particularly problematic at high frequencies. Stray impedances may be caused by mutual inductance and stray capacitance in the geometrical set-up and do not describe the fuel cell. Three different stack geometries were investigated by electrochemical impedance spectroscopy. Impedance measurements were carried...

  3. High power, repetitive stacked Blumlein pulse generators

    Energy Technology Data Exchange (ETDEWEB)

    Davanloo, F; Borovina, D L; Korioth, J L; Krause, R K; Collins, C B [Univ. of Texas at Dallas, Richardson, TX (United States). Center for Quantum Electronics; Agee, F J [US Air Force Phillips Lab., Kirtland AFB, NM (United States); Kingsley, L E [US Army CECOM, Ft. Monmouth, NJ (United States)

    1997-12-31

    The repetitive stacked Blumlein pulse power generators developed at the University of Texas at Dallas consist of several triaxial Blumleins stacked in series at one end. The lines are charged in parallel and synchronously commuted with a single switch at the other end. In this way, relatively low charging voltages are multiplied to give a high discharge voltage across an arbitrary load. Extensive characterization of these novel pulsers have been performed over the past few years. Results indicate that they are capable of producing high power waveforms with rise times and repetition rates in the range of 0.5-50 ns and 1-300 Hz, respectively, using a conventional thyratron, spark gap, or photoconductive switch. The progress in the development and use of stacked Blumlein pulse generators is reviewed. The technology and the characteristics of these novel pulsers driving flash x-ray diodes are discussed. (author). 4 figs., 5 refs.

  4. Calculation of tritium release from reactor's stack

    International Nuclear Information System (INIS)

    Akhadi, M.

    1996-01-01

    Method for calculation of tritium release from nuclear to environment has been discussed. Part of gas effluent contain tritium in form of HTO vapor released from reactor's stack was sampled using silica-gel. The silica-gel was put in the water to withdraw HTO vapor absorbed by silica-gel. Tritium concentration in the water was measured by liquid scintillation counter of Aloka LSC-703. Tritium concentration in the gas effluent and total release of tritium from reactor's stack during certain interval time were calculated using simple mathematic formula. This method has examined for calculation of tritium release from JRR-3M's stack of JAERI, Japan. From the calculation it was obtained the value of tritium release as much as 4.63 x 10 11 Bq during one month. (author)

  5. Numerical analysis of ac loss in bifilar stacks and coils of ion beam assisted deposition YBCO coated conductors

    International Nuclear Information System (INIS)

    Nguyen, Doan N.; Ashworth, Stephen P.; Willis, Jeffrey O.

    2009-01-01

    In this paper we present a finite element model using the commercial COMSOL software package for calculating the ac loss in bifilar stacks of high temperature superconducting tape. In the model, the current-voltage relationship characterizing the superconducting properties is assumed to follow a power law. The calculations were performed for infinite bifilar stacks with different values of layer-to-layer separation D. With appropriate settings for the boundary conditions, the numerical results agree well with the analytical data obtained from a recently proposed model [J. R. Clem, Phys. Rev. B 77, 134506 (2008)]. The numerical approach was also used to investigate the end effects in a bifilar stack to answer the following question: how many layers away from the end of a stack are required before the environment of a given layer is identical to that in an infinite stack? We find that the answer to this question depends strongly on the value of D. Based on this study, a model for calculating the ac loss in bifilar noninductively wound coils with a finite number of turns is proposed

  6. Nonlinearly stacked low noise turbofan stator

    Science.gov (United States)

    Schuster, William B. (Inventor); Nolcheff, Nick A. (Inventor); Gunaraj, John A. (Inventor); Kontos, Karen B. (Inventor); Weir, Donald S. (Inventor)

    2009-01-01

    A nonlinearly stacked low noise turbofan stator vane having a characteristic curve that is characterized by a nonlinear sweep and a nonlinear lean is provided. The stator is in an axial fan or compressor turbomachinery stage that is comprised of a collection of vanes whose highly three-dimensional shape is selected to reduce rotor-stator and rotor-strut interaction noise while maintaining the aerodynamic and mechanical performance of the vane. The nonlinearly stacked low noise turbofan stator vane reduces noise associated with the fan stage of turbomachinery to improve environmental compatibility.

  7. Stack Monitoring System At PUSPATI TRIGA Reactor

    International Nuclear Information System (INIS)

    Zamrul Faizad Omar; Mohd Sabri Minhat; Zareen Khan Abdul Jalil Khan; Ridzuan Abdul Mutalib; Khairulezwan Abdul Manan; Nurfarhana Ayuni Joha; Izhar Abu Hussin

    2014-01-01

    This paper describes the current Stack Monitoring System at PUSPATI TRIGA Reactor (RTP) building. A stack monitoring system is a continuous air monitor placed at the reactor top for monitoring the presence of radioactive gaseous in the effluent air from the RTP building. The system consists of four detectors that provide the reading for background, particulate, Iodine and Noble gas. There is a plan to replace the current system due to frequent fault of the system, thus thorough understanding of the current system is required. Overview of the whole system will be explained in this paper. Some current results would be displayed and moving forward brief plan would be mentioned. (author)

  8. Effects of doping and bias voltage on the screening in AAA-stacked trilayer graphene

    Science.gov (United States)

    Mohammadi, Yawar; Moradian, Rostam; Shirzadi Tabar, Farzad

    2014-09-01

    We calculate the static polarization of AAA-stacked trilayer graphene (TLG) and study its screening properties within the random phase approximation (RPA) in all undoped, doped and biased regimes. We find that the static polarization of undoped AAA-stacked TLG is a combination of the doped and undoped single-layer graphene static polarization. This leads to an enhancement of the dielectric background constant along a Thomas-Fermi screening with the Thomas-Fermi wave vector which is independent of carrier concentrations and a 1/r3 power law decay for the long-distance behavior of the screened Coulomb potential. We show that effects of a bias voltage can be taken into account by a renormalization of the interlayer hopping energy to a new bias-voltage-dependent value, indicating screening properties of AAA-stacked TLG can be tuned electrically. We also find that screening properties of doped AAA-stacked TLG, when μ exceeds √{2}γ, are similar to that of doped SLG only depending on doping. While for μ<√{2}γ, its screening properties are combination of SLG and AA-stacked bilayer graphene screening properties and they are determined by doping and the interlayer hopping energy.

  9. A Force Sensorless Method for CFRP/Ti Stack Interface Detection during Robotic Orbital Drilling Operations

    Directory of Open Access Journals (Sweden)

    Qiang Fang

    2015-01-01

    Full Text Available Drilling carbon fiber reinforced plastics and titanium (CFRP/Ti stacks is one of the most important activities in aircraft assembly. It is favorable to use different drilling parameters for each layer due to their dissimilar machining properties. However, large aircraft parts with changing profiles lead to variation of thickness along the profiles, which makes it challenging to adapt the cutting parameters for different materials being drilled. This paper proposes a force sensorless method based on cutting force observer for monitoring the thrust force and identifying the drilling material during the drilling process. The cutting force observer, which is the combination of an adaptive disturbance observer and friction force model, is used to estimate the thrust force. An in-process algorithm is developed to monitor the variation of the thrust force for detecting the stack interface between the CFRP and titanium materials. Robotic orbital drilling experiments have been conducted on CFRP/Ti stacks. The estimate error of the cutting force observer was less than 13%, and the stack interface was detected in 0.25 s (or 0.05 mm before or after the tool transited it. The results show that the proposed method can successfully detect the CFRP/Ti stack interface for the cutting parameters adaptation.

  10. A Urea Biosensor from Stacked Sol-Gel Films with Immobilized Nile Blue Chromoionophore and Urease Enzyme

    OpenAIRE

    Alqasaimeh, Muawia Salameh; Heng, Lee Yook; Ahmad, Musa

    2007-01-01

    An optical urea biosensor was fabricated by stacking several layers of sol-gel films. The stacking of the sol-gel films allowed the immobilization of a Nile Blue chromoionophore (ETH 5294) and urease enzyme separately without the need of any chemical attachment procedure. The absorbance response of the biosensor was monitored at 550 nm, i.e. the deprotonation of the chromoionophore. This multi-layer sol-gel film format enabled higher enzyme loading in the biosensor to be achieved. The urea op...

  11. Introduction of a stack-phantom for PET

    International Nuclear Information System (INIS)

    Jonsson, C.; Schnell, P.O.; Jacobsson, H.; Engelin, L.; Danielsson, A.M.; Johansson, L.; Larsson, S.A.; Pagani, M.; Stone-Elander, S.

    2002-01-01

    Aim: We have previously developed a new flexible phantom system for SPECT, i.e. 'the stack phantom' (Eur. J. Nucl. Med. 27, No.2, 131-139, 2000). The unique feature of this phantom system is that it allows studies with, as well as without major degrading impacts from photon attenuation and Compton scattering. The specific aim of this work was to further develop the system with special reference to PET. Material and methods: The principle of the phantom concept is discrete sampling of 3D objects by a series of equidistant 2D planes. The 2D planes are a digitised set of 2D sections, representing the radioactivity distribution in the object of interest. Using a grey scale related to the radioactivity concentration, selected images are printed by radioactive ink on thin paper sheets and stacked into the 3D structure with low-density or with tissue equivalent material in between. Using positron emitting radionuclides, the paper sheets alone may not be sufficiently thick to avoid annihilation losses due to escaping positrons. In order to investigate the amount of additional material needed, a spot of radioactivity ( 18 F) was printed out and subsequently covered by adding thin plastic films (0.055mm) on both sides of the paper. Short PET scans (ECAT 921) were performed and the count-rate was registered after each additional layer of plastic cover. A first prototype, a cylindrical cold-spot phantom was constructed on the basis of these results. Nine identical sheets were printed out and first mounted in between 4 mm plates of polystyrene (density 1.04 g/cm 3 ). After a PET-scan, the paper sheets were re-mounted in between a low-density material (Divinycell, H30, density 0.03 g/cm 3 ) before repeating the PET scan. Results: For 18 F, the number of registered annihilation photons increased with increasing number of plastic sheets from 70% for the pure paper sheet to about 100% with 0.5 mm plastic cover on each side. PET of the low-density stacked cold spot phantom

  12. Stacked spheres and lower bound theorem

    Indian Academy of Sciences (India)

    BASUDEB DATTA

    2011-11-20

    Nov 20, 2011 ... Preliminaries. Lower bound theorem. On going work. Definitions. An n-simplex is a convex hull of n + 1 affinely independent points. (called vertices) in some Euclidean space R. N . Stacked spheres and lower bound theorem. Basudeb Datta. Indian Institute of Science. 2 / 27 ...

  13. Contemporary sample stacking in analytical electrophoresis

    Czech Academy of Sciences Publication Activity Database

    Šlampová, Andrea; Malá, Zdeňka; Pantůčková, Pavla; Gebauer, Petr; Boček, Petr

    2013-01-01

    Roč. 34, č. 1 (2013), s. 3-18 ISSN 0173-0835 R&D Projects: GA ČR GAP206/10/1219 Institutional support: RVO:68081715 Keywords : biological samples * stacking * trace analysis * zone electrophoresis Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 3.161, year: 2013

  14. SRS reactor stack plume marking tests

    International Nuclear Information System (INIS)

    Petry, S.F.

    1992-03-01

    Tests performed in 105-K in 1987 and 1988 demonstrated that the stack plume can successfully be made visible (i.e., marked) by introducing smoke into the stack breech. The ultimate objective of these tests is to provide a means during an emergency evacuation so that an evacuee can readily identify the stack plume and evacuate in the opposite direction, thus minimizing the potential of severe radiation exposure. The EPA has also requested DOE to arrange for more tests to settle a technical question involving the correct calculation of stack downwash. New test canisters were received in 1988 designed to produce more smoke per unit time; however, these canisters have not been evaluated, because normal ventilation conditions have not been reestablished in K Area. Meanwhile, both the authorization and procedure to conduct the tests have expired. The tests can be performed during normal reactor operation. It is recommended that appropriate authorization and procedure approval be obtained to resume testing after K Area restart

  15. Scaling the CERN OpenStack cloud

    Science.gov (United States)

    Bell, T.; Bompastor, B.; Bukowiec, S.; Castro Leon, J.; Denis, M. K.; van Eldik, J.; Fermin Lobo, M.; Fernandez Alvarez, L.; Fernandez Rodriguez, D.; Marino, A.; Moreira, B.; Noel, B.; Oulevey, T.; Takase, W.; Wiebalck, A.; Zilli, S.

    2015-12-01

    CERN has been running a production OpenStack cloud since July 2013 to support physics computing and infrastructure services for the site. In the past year, CERN Cloud Infrastructure has seen a constant increase in nodes, virtual machines, users and projects. This paper will present what has been done in order to make the CERN cloud infrastructure scale out.

  16. Stacking non-BPS D-branes

    International Nuclear Information System (INIS)

    Alberghi, Gian Luigi; Caceres, Elena; Goldstein, Kevin; Lowe, David A. . lowe@het.brown.edu

    2001-08-01

    We present a candidate supergravity solution for a stacked configuration of stable non-BPS D-branes in Type II string theory compactified on T 4 /Z 2 . This gives a supergravity description of nonabelian tachyon condensation on the brane woldvolume. (author)

  17. Trace interpolation by slant-stack migration

    International Nuclear Information System (INIS)

    Novotny, M.

    1990-01-01

    The slant-stack migration formula based on the radon transform is studied with respect to the depth steep Δz of wavefield extrapolation. It can be viewed as a generalized trace-interpolation procedure including wave extrapolation with an arbitrary step Δz. For Δz > 0 the formula yields the familiar plane-wave decomposition, while for Δz > 0 it provides a robust tool for migration transformation of spatially under sampled wavefields. Using the stationary phase method, it is shown that the slant-stack migration formula degenerates into the Rayleigh-Sommerfeld integral in the far-field approximation. Consequently, even a narrow slant-stack gather applied before the diffraction stack can significantly improve the representation of noisy data in the wavefield extrapolation process. The theory is applied to synthetic and field data to perform trace interpolation and dip reject filtration. The data examples presented prove that the radon interpolator works well in the dip range, including waves with mutual stepouts smaller than half the dominant period

  18. Contemporary sample stacking in analytical electrophoresis

    Czech Academy of Sciences Publication Activity Database

    Malá, Zdeňka; Šlampová, Andrea; Křivánková, Ludmila; Gebauer, Petr; Boček, Petr

    2015-01-01

    Roč. 36, č. 1 (2015), s. 15-35 ISSN 0173-0835 R&D Projects: GA ČR(CZ) GA13-05762S Institutional support: RVO:68081715 Keywords : biological samples * stacking * trace analysis * zone electrophoresis Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 2.482, year: 2015

  19. 40 CFR 61.53 - Stack sampling.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 8 2010-07-01 2010-07-01 false Stack sampling. 61.53 Section 61.53 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) NATIONAL... sampling. (a) Mercury ore processing facility. (1) Unless a waiver of emission testing is obtained under...

  20. 40 CFR 61.33 - Stack sampling.

    Science.gov (United States)

    2010-07-01

    ... 40 Protection of Environment 8 2010-07-01 2010-07-01 false Stack sampling. 61.33 Section 61.33 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) AIR PROGRAMS (CONTINUED) NATIONAL... sampling. (a) Unless a waiver of emission testing is obtained under § 61.13, each owner or operator...

  1. OpenStack cloud computing cookbook

    CERN Document Server

    Jackson, Kevin

    2013-01-01

    A Cookbook full of practical and applicable recipes that will enable you to use the full capabilities of OpenStack like never before.This book is aimed at system administrators and technical architects moving from a virtualized environment to cloud environments with familiarity of cloud computing platforms. Knowledge of virtualization and managing linux environments is expected.

  2. Toward advising SME's on stacked funding

    NARCIS (Netherlands)

    Rauwerda, Kirsten; van Teeffelen, Lex; de Graaf, Frank Jan

    2017-01-01

    This paper addresses new funding issues faced by SMEs. Over a period of nine months, the authors conducted a preliminary study into the problems surrounding stacked funding faced by SMEs and their financial advisers. The study includes a short literature review, the outcomes of three round table

  3. Photoswitchable Intramolecular H-Stacking of Perylenebisimide

    NARCIS (Netherlands)

    Wang, Jiaobing; Kulago, Artem; Browne, Wesley R.; Feringa, Ben L.

    2010-01-01

    Dynamic control over the formation of H- or J-type aggregates of chromophores is of fundamental importance for developing responsive organic optoelectronic materials. In this study, the first example of photoswitching between a nonstacked and an intramolecularly H-stacked arrangement of

  4. OpenStack Object Storage (Swift) essentials

    CERN Document Server

    Kapadia, Amar; Varma, Sreedhar

    2015-01-01

    If you are an IT administrator and you want to enter the world of cloud storage using OpenStack Swift, then this book is ideal for you. Basic knowledge of Linux and server technology is beneficial to get the most out of the book.

  5. LONG-TERM PERFORMANCE OF SOLID OXIDE STACKS WITH ELECTRODE-SUPPORTED CELLS OPERATING IN THE STEAM ELECTROLYSIS MODE

    Energy Technology Data Exchange (ETDEWEB)

    J. E. O' Brien; R. C. O' Brien; X. Zhang; G. Tao; B. J. Butler

    2011-11-01

    Performance characterization and durability testing have been completed on two five-cell high-temperature electrolysis stacks constructed with advanced cell and stack technologies. The solid oxide cells incorporate a negative-electrode-supported multi-layer design with nickel-zirconia cermet negative electrodes, thin-film yttria-stabilized zirconia electrolytes, and multi-layer lanthanum ferrite-based positive electrodes. The per-cell active area is 100 cm2. The stack is internally manifolded with compliant mica-glass seals. Treated metallic interconnects with integral flow channels separate the cells. Stack compression is accomplished by means of a custom spring-loaded test fixture. Initial stack performance characterization was determined through a series of DC potential sweeps in both fuel cell and electrolysis modes of operation. Results of these sweeps indicated very good initial performance, with area-specific resistance values less than 0.5 ?.cm2. Long-term durability testing was performed with A test duration of 1000 hours. Overall performance degradation was less than 10% over the 1000-hour period. Final stack performance characterization was again determined by a series of DC potential sweeps at the same flow conditions as the initial sweeps in both electrolysis and fuel cell modes of operation. A final sweep in the fuel cell mode indicated a power density of 0.356 W/cm2, with average per-cell voltage of 0.71 V at a current of 50 A.

  6. Topological chiral phonons in center-stacked bilayer triangle lattices

    Science.gov (United States)

    Xu, Xifang; Zhang, Wei; Wang, Jiaojiao; Zhang, Lifa

    2018-06-01

    Since chiral phonons were found in an asymmetric two-dimensional hexagonal lattice, there has been growing interest in the study of phonon chirality, which were experimentally verified very recently in monolayer tungsten diselenide (2018 Science 359 579). In this work, we find chiral phonons with nontrivial topology in center-stacked bilayer triangle lattices. At the Brillouin-zone corners, (), circularly polarized phonons and nonzero phonon Berry curvature are observed. Moreover, we find that the phonon chirality remain robust with changing sublattice mass ratio and interlayer coupling. The chiral phonons at the valleys are demonstrated in doubler-layer sodium chloride along the [1 1 1] direction. We believe that the findings on topological chiral phonons in triangle lattices will give guidance in the study of chiral phonons in real materials and promote the phononic applications.

  7. Barrier inhomogeneities at vertically stacked graphene-based heterostructures.

    Science.gov (United States)

    Lin, Yen-Fu; Li, Wenwu; Li, Song-Lin; Xu, Yong; Aparecido-Ferreira, Alex; Komatsu, Katsuyoshi; Sun, Huabin; Nakaharai, Shu; Tsukagoshi, Kazuhito

    2014-01-21

    The integration of graphene and other atomically flat, two-dimensional materials has attracted much interest and been materialized very recently. An in-depth understanding of transport mechanisms in such heterostructures is essential. In this study, vertically stacked graphene-based heterostructure transistors were manufactured to elucidate the mechanism of electron injection at the interface. The temperature dependence of the electrical characteristics was investigated from 300 to 90 K. In a careful analysis of current-voltage characteristics, an unusual decrease in the effective Schottky barrier height and increase in the ideality factor were observed with decreasing temperature. A model of thermionic emission with a Gaussian distribution of barriers was able to precisely interpret the conduction mechanism. Furthermore, mapping of the effective Schottky barrier height is unmasked as a function of temperature and gate voltage. The results offer significant insight for the development of future layer-integration technology based on graphene-based heterostructures.

  8. Sodium-Induced Reordering of Atomic Stacks in Black Phosphorus

    KAUST Repository

    Cheng, Yingchun

    2017-01-12

    While theoretical simulations predict contradictory results about how the intercalation of foreign metal atoms affects the order of atomic layers in black phosphorus (BP), no direct experimental visualization work has yet clarified this ambiguity. By in situ electrochemical sodiation of BP inside a high-resolution transmission electron microscope and first-principles calculations, we found that sodium intercalation induces a relative glide of/ ⟨010⟩ {001}, resulting in reordering of atomic stacks from AB to AC in BP. The observed local amorphization in our experiments is triggered by lattice constraints. We predict that intercalation of sodium or other metal atoms introduces n-type carriers in BP. This potentially opens a new field for two-dimensional electronics based on BP.

  9. Development of Thread-compatible Open Source Stack

    Science.gov (United States)

    Zimmermann, Lukas; Mars, Nidhal; Schappacher, Manuel; Sikora, Axel

    2017-07-01

    The Thread protocol is a recent development based on 6LoWPAN (IPv6 over IEEE 802.15.4), but with extensions regarding a more media independent approach, which - additionally - also promises true interoperability. To evaluate and analyse the operation of a Thread network a given open source 6LoWPAN stack for embedded devices (emb::6) has been extended in order to comply with the Thread specification. The implementation covers Mesh Link Establishment (MLE) and network layer functionality as well as 6LoWPAN mesh under routing mechanism based on MAC short addresses. The development has been verified on a virtualization platform and allows dynamical establishment of network topologies based on Thread’s partitioning algorithm.

  10. Strontium titanate/silicon-based terahertz photonic crystal multilayer stack

    International Nuclear Information System (INIS)

    Xin, J.Z.; Jim, K.L.; Tsang, Y.H.; Chan, H.L.W.; Leung, C.W.; Yang, J.; Gong, X.J.; Chen, L.Q.; Gao, F.

    2012-01-01

    A one-dimensional photonic crystal working in the terahertz (THz) range was designed and implemented. To facilitate the design, the transmission properties of strontium titanate crystals were characterized by THz-time-domain spectroscopy. Relatively high refractive index (∝18.5) and transmission ratio (0.08) were observed between 0.2 to 1 THz. A stacked structure of (Si d Si /STO d STO ) N /Si d Si was then designed, with transmission spectra calculated by the transfer matrix method. The effects of the filling ratio (d STO /(d Si +d STO )), periodicity (d Si +d STO ) and the number of repeats N on the transmission of PC were investigated. The effect of introducing a defect layer was also studied. Based on these, Si/STO multilayers with STO defect thickness of 125 μm and 200 μm were measured. The shift of the defect mode was observed and compared with the calculations. (orig.)

  11. Sodium-Induced Reordering of Atomic Stacks in Black Phosphorus

    KAUST Repository

    Cheng, Yingchun; Zhu, Yihan; Han, Yu; Liu, Zhongyuan; Yang, Bingchao; Nie, Anmin; Huang, Wei; Shahbazian-Yassar, Reza; Mashayek, Farzad

    2017-01-01

    While theoretical simulations predict contradictory results about how the intercalation of foreign metal atoms affects the order of atomic layers in black phosphorus (BP), no direct experimental visualization work has yet clarified this ambiguity. By in situ electrochemical sodiation of BP inside a high-resolution transmission electron microscope and first-principles calculations, we found that sodium intercalation induces a relative glide of/ ⟨010⟩ {001}, resulting in reordering of atomic stacks from AB to AC in BP. The observed local amorphization in our experiments is triggered by lattice constraints. We predict that intercalation of sodium or other metal atoms introduces n-type carriers in BP. This potentially opens a new field for two-dimensional electronics based on BP.

  12. A cross-layer communication framework for wireless networked control systems

    NARCIS (Netherlands)

    Israr, N.; Scanlon, W.G.; Irwin, G.W.

    2009-01-01

    This paper presents a robust, dynamic cross-layer wireless communication architecture for wireless networked control systems. Each layer in the proposed protocol architecture contributes to the overall goal of reliable, energy efficient communication. The protocol stack also features a

  13. Stacking multiple connecting functional materials in tandem organic light-emitting diodes

    Science.gov (United States)

    Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

    2017-02-01

    Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

  14. Layered tin dioxide microrods

    International Nuclear Information System (INIS)

    Duan Junhong; Huang Hongbo; Gong Jiangfeng; Zhao Xiaoning; Cheng Guangxu; Yang Shaoguang

    2007-01-01

    Single-crystalline layered SnO 2 microrods were synthesized by a simple tin-water reaction at 900 deg. C. The structural and optical properties of the sample were characterized by x-ray powder diffraction, energy-dispersive x-ray spectroscopy, scanning electron microscopy, high resolution transmission electron microscopy, Raman scattering and photoluminescence (PL) spectroscopy. High resolution transmission electron microscopy studies and selected area electron diffraction patterns revealed that the layered SnO 2 microrods are single crystalline and their growth direction is along [1 1 0]. The growth mechanism of the microrods was proposed based on SEM, TEM characterization and thermodynamic analysis. It is deduced that the layered microrods grow by the stacking of SnO 2 sheets with a (1 1 0) surface in a vapour-liquid-solid process. Three emission peaks at 523, 569 and 626 nm were detected in room-temperature PL measurements

  15. Arsenic sulfide layers for dielectric reflection mirrors prepared from solution

    Science.gov (United States)

    Matějec, Vlastimil; Pedlikova, Jitka; BartoÅ, Ivo; Podrazký, Ondřej

    2017-12-01

    Chalcogenide materials due to high refractive indices, transparency in the mid-IR spectral region, nonlinear refractive indices, etc, have been employed as fibers and films in different photonic devices such as light amplifiers, optical regenerators, broadband radiation sources. Chalcogenide films can be prepared by physical methods as well as by solution-based techniques in which solutions of chalcogenides in amines are used. This paper presents results on the solution-based fabrication and optical characterization of single arsenic sulfide layers and multilayer stacks containing As2S3 layers together with porous silica layers coated on planar and fiber-optic substrates. Input As2S3 solutions for the layer fabrications were prepared by dissolving As2S3 powder in n-propylamine in a concentration of 0.50 mol/l. These solutions were applied on glass slides by dip-coating method and obtained layers were thermally treated in vacuum at temperatures up to 180 °C. Similar procedure was used for As2S3 layers in multilayer stacks. Such stacks were fabricated by repeating the application of one porous silica layer prepared by the sol-gel method and one As2S3 layer onto glass slides or silica fibers (a diameter of 0.3 mm) by using the dip-coating method. It has been found that the curing process of the applied layers has to be carefully controlled in order to obtain stacks with three pairs of such layers. Single arsenic and porous silica layers were characterized by optical microscopy, and by measuring their transmission spectra in a range of 200-2500 nm. Thicknesses and refractive indices were estimated from the spectra. Transmission spectra of planar multilayer stacks were measured, too. Interference bands have been determined from optical measurements on the multilayer stacks with a minimum transmittance of about 50% which indicates the possibility of using such stacks as reflecting mirrors.

  16. Project W-420 Stack Monitoring system upgrades conceptual design report

    International Nuclear Information System (INIS)

    TUCK, J.A.

    1998-01-01

    This document describes the scope, justification, conceptual design, and performance of Project W-420 stack monitoring system upgrades on six NESHAP-designated, Hanford Tank Farms ventilation exhaust stacks

  17. Project W-420 Stack Monitoring system upgrades conceptual design report

    Energy Technology Data Exchange (ETDEWEB)

    TUCK, J.A.

    1998-11-06

    This document describes the scope, justification, conceptual design, and performance of Project W-420 stack monitoring system upgrades on six NESHAP-designated, Hanford Tank Farms ventilation exhaust stacks.

  18. Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface

    Science.gov (United States)

    Pain, Bedabrata (Inventor)

    2012-01-01

    An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

  19. Experiments on Classification of Electroencephalography (EEG Signals in Imagination of Direction using Stacked Autoencoder

    Directory of Open Access Journals (Sweden)

    Kenta Tomonaga

    2017-08-01

    Full Text Available This paper presents classification methods for electroencephalography (EEG signals in imagination of direction measured by a portable EEG headset. In the authorsr previous studies, principal component analysis extracted significant features from EEG signals to construct neural network classifiers. To improve the performance, the authors have implemented a Stacked Autoencoder (SAE for the classification. The SAE carries out feature extraction and classification in a form of multi-layered neural network. Experimental results showed that the SAE outperformed the previous classifiers.

  20. Multistage Force Amplification of Piezoelectric Stacks

    Science.gov (United States)

    Xu, Tian-Bing (Inventor); Siochi, Emilie J. (Inventor); Zuo, Lei (Inventor); Jiang, Xiaoning (Inventor); Kang, Jin Ho (Inventor)

    2015-01-01

    Embodiments of the disclosure include an apparatus and methods for using a piezoelectric device, that includes an outer flextensional casing, a first cell and a last cell serially coupled to each other and coupled to the outer flextensional casing such that each cell having a flextensional cell structure and each cell receives an input force and provides an output force that is amplified based on the input force. The apparatus further includes a piezoelectric stack coupled to each cell such that the piezoelectric stack of each cell provides piezoelectric energy based on the output force for each cell. Further, the last cell receives an input force that is the output force from the first cell and the last cell provides an output apparatus force In addition, the piezoelectric energy harvested is based on the output apparatus force. Moreover, the apparatus provides displacement based on the output apparatus force.

  1. Radiation-Tolerant Intelligent Memory Stack - RTIMS

    Science.gov (United States)

    Ng, Tak-kwong; Herath, Jeffrey A.

    2011-01-01

    This innovation provides reconfigurable circuitry and 2-Gb of error-corrected or 1-Gb of triple-redundant digital memory in a small package. RTIMS uses circuit stacking of heterogeneous components and radiation shielding technologies. A reprogrammable field-programmable gate array (FPGA), six synchronous dynamic random access memories, linear regulator, and the radiation mitigation circuits are stacked into a module of 42.7 42.7 13 mm. Triple module redundancy, current limiting, configuration scrubbing, and single- event function interrupt detection are employed to mitigate radiation effects. The novel self-scrubbing and single event functional interrupt (SEFI) detection allows a relatively soft FPGA to become radiation tolerant without external scrubbing and monitoring hardware

  2. Development of on-site PAFC stacks

    Energy Technology Data Exchange (ETDEWEB)

    Hotta, K.; Matsumoto, Y. [Kansai Electric Power Co., Amagasaki (Japan); Horiuchi, H.; Ohtani, T. [Mitsubishi Electric Corp., Kobe (Japan)

    1996-12-31

    PAFC (Phosphoric Acid Fuel Cell) has been researched for commercial use and demonstration plants have been installed in various sites. However, PAFC don`t have a enough stability yet, so more research and development must be required in the future. Especially, cell stack needs a proper state of three phases (liquid, gas and solid) interface. It is very difficult technology to keep this condition for a long time. In the small size cell with the electrode area of 100 cm{sup 2}, gas flow and temperature distributions show uniformity. But in the large size cell with the electrode area of 4000 cm{sup 2}, the temperature distributions show non-uniformity. These distributions would cause to be shorten the cell life. Because these distributions make hot-spot and gas poverty in limited parts. So we inserted thermocouples in short-stack for measuring three-dimensional temperature distributions and observed effects of current density and gas utilization on temperature.

  3. System for inspection of stacked cargo containers

    Science.gov (United States)

    Derenzo, Stephen [Pinole, CA

    2011-08-16

    The present invention relates to a system for inspection of stacked cargo containers. One embodiment of the invention generally comprises a plurality of stacked cargo containers arranged in rows or tiers, each container having a top, a bottom a first side, a second side, a front end, and a back end; a plurality of spacers arranged in rows or tiers; one or more mobile inspection devices for inspecting the cargo containers, wherein the one or more inspection devices are removeably disposed within the spacers, the inspection means configured to move through the spacers to detect radiation within the containers. The invented system can also be configured to inspect the cargo containers for a variety of other potentially hazardous materials including but not limited to explosive and chemical threats.

  4. Industrial stacks design; Diseno de chimeneas industriales

    Energy Technology Data Exchange (ETDEWEB)

    Cacheux, Luis [Instituto de Investigaciones Electricas, Cuernavaca (Mexico)

    1987-12-31

    The Instituto de Investigaciones Electricas (IIE) though its Civil Works Department, develops, under contract with CFE`s Gerencia de Proyectos Termoelectricos (Management of Fossil Power Plant Projects), a series of methods for the design of stacks, which pretends to solve the a present day problem: the stack design of the fossil power plants that will go into operation during the next coming years in the country. [Espanol] El Instituto de Investigaciones Electricas (IIE), a traves del Departamento de Ingenieria Civil, desarrolla, bajo contrato con la Gerencia de Proyectos Termoelectricos, de la Comision Federal de Electricidad (CFE), un conjunto de metodos para el diseno de chimeneas, con el que se pretende resolver un problema inmediato: el diseno de las chimeneas de las centrales termoelectricas que entraran en operacion durante los proximos anos, en el pais.

  5. Absorption spectra of AA-stacked graphite

    International Nuclear Information System (INIS)

    Chiu, C W; Lee, S H; Chen, S C; Lin, M F; Shyu, F L

    2010-01-01

    AA-stacked graphite shows strong anisotropy in geometric structures and velocity matrix elements. However, the absorption spectra are isotropic for the polarization vector on the graphene plane. The spectra exhibit one prominent plateau at middle energy and one shoulder structure at lower energy. These structures directly reflect the unique geometric and band structures and provide sufficient information for experimental fitting of the intralayer and interlayer atomic interactions. On the other hand, monolayer graphene shows a sharp absorption peak but no shoulder structure; AA-stacked bilayer graphene has two absorption peaks at middle energy and abruptly vanishes at lower energy. Furthermore, the isotropic features are expected to exist in other graphene-related systems. The calculated results and the predicted atomic interactions could be verified by optical measurements.

  6. Industrial stacks design; Diseno de chimeneas industriales

    Energy Technology Data Exchange (ETDEWEB)

    Cacheux, Luis [Instituto de Investigaciones Electricas, Cuernavaca (Mexico)

    1986-12-31

    The Instituto de Investigaciones Electricas (IIE) though its Civil Works Department, develops, under contract with CFE`s Gerencia de Proyectos Termoelectricos (Management of Fossil Power Plant Projects), a series of methods for the design of stacks, which pretends to solve the a present day problem: the stack design of the fossil power plants that will go into operation during the next coming years in the country. [Espanol] El Instituto de Investigaciones Electricas (IIE), a traves del Departamento de Ingenieria Civil, desarrolla, bajo contrato con la Gerencia de Proyectos Termoelectricos, de la Comision Federal de Electricidad (CFE), un conjunto de metodos para el diseno de chimeneas, con el que se pretende resolver un problema inmediato: el diseno de las chimeneas de las centrales termoelectricas que entraran en operacion durante los proximos anos, en el pais.

  7. 400 W High Temperature PEM Fuel Cell Stack Test

    DEFF Research Database (Denmark)

    Andreasen, Søren Juhl; Kær, Søren Knudsen

    2006-01-01

    This work demonstrates the operation of a 30 cell high temperature PEM (HTPEM) fuel cell stack. This prototype stack has been developed at the Institute of Energy Technology, Aalborg University, as a proof-of-concept for a low pressure cathode air cooled HTPEM stack. The membranes used are Celtec...

  8. Gain Enhancement of Low-Profile, Electrically Small Capacitive Feed Antennas Using Stacked Meander Lines

    Directory of Open Access Journals (Sweden)

    Kazuki Ide

    2010-01-01

    Full Text Available The present paper describes the gain enhancement of a small and low-profile linear antenna with capacitive feed (C-feed using three metallic layers. The antenna has very small leakage current on the outer conductor of the coaxial cable and can easily control the imaginary part of the input impedance. The gain of the stacked three-layer meander line antenna, with the meander line in the middle layer being opposite to that of the other two layers, has increased by around 7 dB compared to the single layered C-feed antenna. The antenna gain is discussed based on simulated and measured results, which demonstrates that the antenna has successfully achieved the acceptable impedance and sufficient gain for mobile terminals and RFID tags.

  9. Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

    International Nuclear Information System (INIS)

    Cho, Ikjun; Cho, Jinhan; Kim, Beom Joon; Cho, Jeong Ho; Ryu, Sook Won

    2014-01-01

    Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-Au NPs ) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-Au NP ) n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO 2 gate dielectric layer. For a single Au NP layer (i.e. PAD/TOA-Au NP ) 1 ) with a number density of 1.82 × 10 12 cm −2 , the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four Au NP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔV th ) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 10 6 ) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate. (paper)

  10. A Late Pleistocene sea level stack

    OpenAIRE

    Spratt Rachel M; Lisiecki Lorraine E

    2016-01-01

    Late Pleistocene sea level has been reconstructed from ocean sediment core data using a wide variety of proxies and models. However, the accuracy of individual reconstructions is limited by measurement error, local variations in salinity and temperature, and assumptions particular to each technique. Here we present a sea level stack (average) which increases the signal-to-noise ratio of individual reconstructions. Specifically, we perform principal componen...

  11. CAM and stack air sampler design guide

    International Nuclear Information System (INIS)

    Phillips, T.D.

    1994-01-01

    About 128 air samplers and CAMs presently in service to detect and document potential radioactive release from 'H' and 'F' area tank farm ventilation stacks are scheduled for replacement and/or upgrade by Projects S-5764, S-2081, S-3603, and S-4516. The seven CAMs scheduled to be upgraded by Project S-4516 during 1995 are expected to provide valuable experience for the three remaining projects. The attached document provides design guidance for the standardized High Level Waste air sampling system

  12. Extended Life PZT Stack Test Fixture

    Science.gov (United States)

    Badescu, Mircea; Sherrit, S.; Bao, X.; Aldrich, J.; Bar-Cohen, Y.; Jones, C.

    2009-01-01

    Piezoelectric stacks are being sought to be used as actuators for precision positioning and deployment of mechanisms in future planetary missions. Beside the requirement for very high operation reliability, these actuators are required for operation at space environments that are considered harsh compared to normal terrestrial conditions.These environmental conditions include low and high temperatures and vacuum or high pressure. Additionally, the stacks are subjected to high stress and in some applications need to operate with a very long lifetime durability.Many of these requirements are beyond the current industry design margins for nominal terrestrial applications. In order to investigate some of the properties that will indicate the durability of such actuators and their limitations we have developed a new type of test fixture that can be easily integrated in various test chambers for simulating environmental conditions, can provide access for multiple measurements while being exposed to adjustable stress levels. We designed and built two test fixtures and these fixtures were made to be adjustable for testing stacks with different dimensions and can be easily used in small or large numbers. The properties that were measured using these fixtures include impedance, capacitance, dielectric loss factor, leakage current, displacement, breakdown voltage, and lifetime performance. The fixtures characteristics and the test capabilities are presented in this paper.

  13. Analysis and prediction of stacking sequences in intercalated lamellar vanadium phosphates

    Energy Technology Data Exchange (ETDEWEB)

    Gautier, Romain [Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS - Ecole Nationale Superieure de Chimie de Rennes (France); Centre Nationale de la Recherche Scientifique (CNRS), Institut des Materiaux Jean Rouxel (IMN), Universite de Nantes (France); Fourre, Yoann; Furet, Eric; Gautier, Regis; Le Fur, Eric [Institut des Sciences Chimiques de Rennes, UMR 6226 CNRS - Ecole Nationale Superieure de Chimie de Rennes (France)

    2015-04-15

    An approach is presented that enables the analysis and prediction of stacking sequences in intercalated lamellar vanadium phosphates. A comparison of previously reported vanadium phosphates reveals two modes of intercalation: (i) 3d transition metal ions intercalated between VOPO{sub 4} layers and (ii) alkali/alkaline earth metal ions between VOPO{sub 4}.H{sub 2}O layers. Both intercalations were investigated using DFT calculations in order to understand the relative shifts of the vanadium phosphate layers. These calculations in addition to an analysis of the stacking sequences in previously reported materials enable the prediction of the crystal structures of M{sub x}(VOPO{sub 4}).yH{sub 2}O (M = Cs{sup +}, Cd{sup 2+} and Sn{sup 2+}). Experimental realization and structural determination of Cd(VOPO{sub 4}){sub 2}.4H{sub 2}O by single-crystal X-ray diffraction confirmed the predicted stacking sequences. (Copyright copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Bottom-up Fabrication of Multilayer Stacks of 3D Photonic Crystals from Titanium Dioxide.

    Science.gov (United States)

    Kubrin, Roman; Pasquarelli, Robert M; Waleczek, Martin; Lee, Hooi Sing; Zierold, Robert; do Rosário, Jefferson J; Dyachenko, Pavel N; Montero Moreno, Josep M; Petrov, Alexander Yu; Janssen, Rolf; Eich, Manfred; Nielsch, Kornelius; Schneider, Gerold A

    2016-04-27

    A strategy for stacking multiple ceramic 3D photonic crystals is developed. Periodically structured porous films are produced by vertical convective self-assembly of polystyrene (PS) microspheres. After infiltration of the opaline templates by atomic layer deposition (ALD) of titania and thermal decomposition of the polystyrene matrix, a ceramic 3D photonic crystal is formed. Further layers with different sizes of pores are deposited subsequently by repetition of the process. The influence of process parameters on morphology and photonic properties of double and triple stacks is systematically studied. Prolonged contact of amorphous titania films with warm water during self-assembly of the successive templates is found to result in exaggerated roughness of the surfaces re-exposed to ALD. Random scattering on rough internal surfaces disrupts ballistic transport of incident photons into deeper layers of the multistacks. Substantially smoother interfaces are obtained by calcination of the structure after each infiltration, which converts amorphous titania into the crystalline anatase before resuming the ALD infiltration. High quality triple stacks consisting of anatase inverse opals with different pore sizes are demonstrated for the first time. The elaborated fabrication method shows promise for various applications demanding broadband dielectric reflectors or titania photonic crystals with a long mean free path of photons.

  15. Exposure of CR39 Stacks to Oxygen and Sulphur Beams at the CERN-SPS

    CERN Multimedia

    2002-01-01

    We plan to expose 8 stacks of CR39 sheets to oxygen and sulphur ions of 60 and 200~GeV at the CERN-SPS.\\\\ \\\\ The main purpose of the exposures is the calibration of the CR39 sheets used for a large area experimental search for magnetic monopoles at the Gran Sasso Laboratory (experiment MACRO). \\\\ \\\\ The stacks have 20~layers of CR39, each layer 13~cm~x~7~cm and 1.4~mm thick. A copper absorber is located after the first 6 layers. \\\\ \\\\ We require exposures of about 2000 tracks per cm$^2$ over the entire area of the stack with a uniform illumination. The standard beam used for the emulsion experiments is normally adequate for this purpose.\\\\ \\\\ We have performed one exposure to sulphur ions. The etched tracks have been measured automatically with the Elbeck image analyser system. We measured the incoming sulphur ions as well as the nuclear fragments produced in the copper absorber. Clean separation among the peaks due to the various fragments is obtained (there is no indication of nuclei with fractional electri...

  16. Guanine base stacking in G-quadruplex nucleic acids

    Science.gov (United States)

    Lech, Christopher Jacques; Heddi, Brahim; Phan, Anh Tuân

    2013-01-01

    G-quadruplexes constitute a class of nucleic acid structures defined by stacked guanine tetrads (or G-tetrads) with guanine bases from neighboring tetrads stacking with one another within the G-tetrad core. Individual G-quadruplexes can also stack with one another at their G-tetrad interface leading to higher-order structures as observed in telomeric repeat-containing DNA and RNA. In this study, we investigate how guanine base stacking influences the stability of G-quadruplexes and their stacked higher-order structures. A structural survey of the Protein Data Bank is conducted to characterize experimentally observed guanine base stacking geometries within the core of G-quadruplexes and at the interface between stacked G-quadruplex structures. We couple this survey with a systematic computational examination of stacked G-tetrad energy landscapes using quantum mechanical computations. Energy calculations of stacked G-tetrads reveal large energy differences of up to 12 kcal/mol between experimentally observed geometries at the interface of stacked G-quadruplexes. Energy landscapes are also computed using an AMBER molecular mechanics description of stacking energy and are shown to agree quite well with quantum mechanical calculated landscapes. Molecular dynamics simulations provide a structural explanation for the experimentally observed preference of parallel G-quadruplexes to stack in a 5′–5′ manner based on different accessible tetrad stacking modes at the stacking interfaces of 5′–5′ and 3′–3′ stacked G-quadruplexes. PMID:23268444

  17. Natural melanin composites by layer-by-layer assembly

    Science.gov (United States)

    Eom, Taesik; Shim, Bong Sub

    2015-04-01

    Melanin is an electrically conductive and biocompatible material, because their conjugated backbone structures provide conducting pathways from human skin, eyes, brain, and beyond. So there is a potential of using as materials for the neural interfaces and the implantable devices. Extracted from Sepia officinalis ink, our natural melanin was uniformly dispersed in mostly polar solvents such as water and alcohols. Then, the dispersed melanin was further fabricated to nano-thin layered composites by the layer-by-layer (LBL) assembly technique. Combined with polyvinyl alcohol (PVA), the melanin nanoparticles behave as an LBL counterpart to from finely tuned nanostructured films. The LBL process can adjust the smart performances of the composites by varying the layering conditions and sandwich thickness. We further demonstrated the melanin loading degree of stacked layers, combination nanostructures, electrical properties, and biocompatibility of the resulting composites by UV-vis spectrophotometer, scanning electron microscope (SEM), multimeter, and in-vitro cell test of PC12, respectively.

  18. Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics.

    Science.gov (United States)

    Zhang, Liangliang; Janotti, Anderson; Meng, Andrew C; Tang, Kechao; Van de Walle, Chris G; McIntyre, Paul C

    2018-02-14

    Layered atomic-layer-deposited and forming-gas-annealed TiO 2 /Al 2 O 3 dielectric stacks, with the Al 2 O 3 layer interposed between the TiO 2 and a p-type germanium substrate, are found to exhibit a significant interface charge dipole that causes a ∼-0.2 V shift of the flat-band voltage and suppresses the leakage current density for gate injection of electrons. These effects can be eliminated by the formation of a trilayer dielectric stack, consistent with the cancellation of one TiO 2 /Al 2 O 3 interface dipole by the addition of another dipole of opposite sign. Density functional theory calculations indicate that the observed interface-dependent properties of TiO 2 /Al 2 O 3 dielectric stacks are consistent in sign and magnitude with the predicted behavior of Al Ti and Ti Al point-defect dipoles produced by local intermixing of the Al 2 O 3 /TiO 2 layers across the interface. Evidence for such intermixing is found in both electrical and physical characterization of the gate stacks.

  19. Oxygen-induced immediate onset of the antiferromagnetic stacking in thin Cr films on Fe(001)

    Energy Technology Data Exchange (ETDEWEB)

    Berti, Giulia, E-mail: giulia.berti@polimi.it; Brambilla, Alberto; Calloni, Alberto; Bussetti, Gianlorenzo; Finazzi, Marco; Duò, Lamberto; Ciccacci, Franco [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-04-20

    We investigated the magnetic coupling of ultra-thin Cr films grown at 600 K on a Fe(001)-p(1 × 1)O substrate by means of spin-polarized photoemission spectroscopy. Our findings show that the expected antiferromagnetic stacking of the magnetization in Cr(001) layers occurs right from the first atomic layer at the Cr/Fe interface. This is at variance with all previous observations in similar systems, prepared in oxygen-free conditions, which always reported on a delayed onset of the magnetic oscillations due to the occurrence of significant chemical alloying at the interface, which is substantially absent in our preparation.

  20. Macroscopic alignment of graphene stacks by Langmuir-Blodgett deposition of amphiphilic hexabenzocoronenes

    DEFF Research Database (Denmark)

    Laursen, B.W.; Nørgaard, K.; Reitzel, N.

    2004-01-01

    ). Grazing-incidence X-ray diffraction (GIXD) and X-ray reflectivity, both utilizing synchrotron radiation, show that these amphiphilic HBCs form well-defined Langmuir monolayers at the air-water interface, with pi-stacked columnar structure where the HBC cores are rotated around the surface normal...... and tilted relative to the water surface. The intercolumnar distance is 20 A. The HBCs are confined to a layer lying on top of the layer of polar groups that are in contact with the water subphase. Efficient transfer of the monolayer of the anthraquinone-substituted HBC derivative to hydrophobic quartz...

  1. Dynamic Model of High Temperature PEM Fuel Cell Stack Temperature

    DEFF Research Database (Denmark)

    Andreasen, Søren Juhl; Kær, Søren Knudsen

    2007-01-01

    cathode air cooled 30 cell HTPEM fuel cell stack developed at the Institute of Energy Technology at Aalborg University. This fuel cell stack uses PEMEAS Celtec P-1000 membranes, runs on pure hydrogen in a dead end anode configuration with a purge valve. The cooling of the stack is managed by running......The present work involves the development of a model for predicting the dynamic temperature of a high temperature PEM (HTPEM) fuel cell stack. The model is developed to test different thermal control strategies before implementing them in the actual system. The test system consists of a prototype...... the stack at a high stoichiometric air flow. This is possible because of the PBI fuel cell membranes used, and the very low pressure drop in the stack. The model consists of a discrete thermal model dividing the stack into three parts: inlet, middle and end and predicting the temperatures in these three...

  2. Stacking metal nano-patterns and fabrication of moth-eye structure

    Science.gov (United States)

    Taniguchi, Jun

    2018-01-01

    Nanoimprint lithography (NIL) can be used as a tool for three-dimensional nanoscale fabrication. In particular, complex metal pattern structures in polymer material are demanded as plasmonic effect devices and metamaterials. To fabricate of metallic color filter, we used silver ink and NIL techniques. Metallic color filter was composed of stacking of nanoscale silver disc patterns and polymer layers, thus, controlling of polymer layer thickness is necessary. To control of thickness of polymer layer, we used spin-coating of UV-curable polymer and NIL. As a result, ten stacking layers with 1000 nm layer thickness was obtained and red color was observed. Ultraviolet nanoimprint lithography (UV-NIL) is the most effective technique for mass fabrication of antireflection structure (ARS) films. For the use of ARS films in mobile phones and tablet PCs, which are touch-screen devices, it is important to protect the films from fingerprints and dust. In addition, as the nanoscale ARS that is touched by the hand is fragile, it is very important to obtain a high abrasion resistance. To solve these problems, a UV-curable epoxy resin has been developed that exhibits antifouling properties and high hardness. The high abrasion resistance ARS films are shown to withstand a load of 250 g/cm2 in the steel wool scratch test, and the reflectance is less than 0.4%.

  3. Analysis of 3D stacked fully functional CMOS Active Pixel Sensor detectors

    International Nuclear Information System (INIS)

    Passeri, D; Servoli, L; Meroli, S

    2009-01-01

    The IC technology trend is to move from 3D flexible configurations (package on package, stacked dies) to real 3D ICs. This is mainly due to i) the increased electrical performances and ii) the cost of 3D integration which may be cheaper than to keep shrinking 2D circuits. Perspective advantages for particle tracking and vertex detectors applications in High Energy Physics can be envisaged: in this work, we will focus on the capabilities of the state-of-the-art vertical scale integration technologies, allowing for the fabrication of very compact, fully functional, multiple layers CMOS Active Pixel Sensor (APS) detectors. The main idea is to exploit the features of the 3D technologies for the fabrication of a ''stack'' of very thin and precisely aligned CMOS APS layers, leading to a single, integrated, multi-layers pixel sensor. The adoption of multiple-layers single detectors can dramatically reduce the mass of conventional, separated detectors (thus reducing multiple scattering issues), at the same time allowing for very precise measurements of particle trajectory and momentum. As a proof of concept, an extensive device and circuit simulation activity has been carried out, aiming at evaluate the suitability of such a kind of CMOS active pixel layers for particle tracking purposes.

  4. Evaluation of field emission properties from multiple-stacked Si quantum dots

    International Nuclear Information System (INIS)

    Takeuchi, Daichi; Makihara, Katsunori; Ohta, Akio; Ikeda, Mitsuhisa; Miyazaki, Seiichi

    2016-01-01

    Multiple-stacked Si quantum dots (QDs) with ultrathin SiO 2 interlayers were formed on ultrathin SiO 2 layers by repeating a process sequence consisting of the formation of Si-QDs by low pressure chemical vapor deposition using a SiH 4 gas and the surface oxidation and subsequent surface modification by remote hydrogen and oxygen plasmas, respectively. To clarify the electron emission mechanism from multiple-stacked Si-QDs covered with an ultrathin Au top electrode, the energy distribution of the emitted electrons and its electric field dependence was measured using a hemispherical electron energy analyzer in an X-ray photoelectron spectroscopy system under DC bias application to the multiple-stacked Si-QD structure. At − 6 V and over, the energy distributions reached a peak at ~ 2.5 eV with a tail toward the higher energy side. While the electron emission intensity was increased exponentially with an increase in the applied DC bias, there was no significant increase in the emission peak energy. The observed emission characteristics can be interpreted in terms of field emissions from the second and/or third topmost Si-QDs resulting from the electric concentration there. - Highlights: • Electron field emission from 6-fold stack of Si-QDs has been evaluated. • AFM measurements show the local electron emission from individual Si-QDs. • Impact of applied bias on the electron emission energy distribution was investigated.

  5. Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Nishimura, Tomonori; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2015-08-17

    We investigated yttrium scandate (YScO{sub 3}) as an alternative high-permittivity (k) dielectric thin film for Ge gate stack formation. Significant enhancement of k-value is reported in YScO{sub 3} comparing to both of its binary compounds, Y{sub 2}O{sub 3} and Sc{sub 2}O{sub 3}, without any cost of interface properties. It suggests a feasible approach to a design of promising high-k dielectrics for Ge gate stack, namely, the formation of high-k ternary oxide out of two medium-k binary oxides. Aggressive scaling of equivalent oxide thickness (EOT) with promising interface properties is presented by using YScO{sub 3} as high-k dielectric and yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) as interfacial layer, for a demonstration of high-k gate stack on Ge. In addition, we demonstrate Ge n-MOSFET performance showing the peak electron mobility over 1000 cm{sup 2}/V s in sub-nm EOT region by YScO{sub 3}/Y-GeO{sub 2}/Ge gate stack.

  6. Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

    International Nuclear Information System (INIS)

    Mukhopadhyay, A.; Banerjee, L.; Sengupta, A.; Rahaman, H.

    2015-01-01

    We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction, by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects

  7. A long-term stable power supply µDMFC stack for wireless sensor node applications

    International Nuclear Information System (INIS)

    Wu, Zonglin; Wang, Xiaohong; Li, Xiaozhao; Xu, Manqi; Liu, Litian

    2014-01-01

    In this paper, a passive, air-breathing four-cell micro direct methanol fuel cell (µDMFC) stack featuring a fuel delivery structure for long-term and stable power supply is designed, fabricated and tested. The fuel is reserved in a T-shaped tank and diffuses through the porous diffusion layer to the catalyst at the anode. A peak power density of 25.7 mW cm −2 and a maximum power output of 113 mW are achieved with 3 M methanol at room temperature, and the stack can produce 60 mW of power, even though only 5% fuel remains in the reservoir. Combined with a low-input dc–dc convertor, the stack can realize a stable and optional constant voltage output from 1 V–6 V. The stack successfully powered a heavy metal sensor node for water environment monitoring 12 d continuously, with consumption of 10 mL 5 M methanol solution. As such, it is believed to be applicable for powering wireless sensor nodes. (paper)

  8. Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Mukhopadhyay, A., E-mail: arnabm.electinstru@gmail.com; Banerjee, L.; Sengupta, A.; Rahaman, H. [School of VLSI Technology, IIEST, Shibpur, Howrah 711103 (India)

    2015-12-14

    We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and are used as channel material in both n-MOSFET and p-MOSFET devices. The effects of different stacking orders on electron and hole effective masses and output characteristics of MOSFETs, such as ON currents, ON/OFF ratio, and transconductance are analyzed. Our results show that about 1.37 times and 1.49 times increase in ON current is possible along armchair and zigzag directions, respectively, 55.11% variation in transconductance is possible along armchair direction, by changing stacking orders (AA, AB, and AC) and about 8 times increase in ON current is achievable by changing channel orientation (armchair or zigzag) in p-MOSFET. About 14.8 mV/V drain induced barrier lowering is observed for both p-MOSFET and n-MOSFET, which signifies good immunity to short channel effects.

  9. NSF tandem stack support structure deflection characteristics

    International Nuclear Information System (INIS)

    Cook, J.

    1979-12-01

    Results are reported of load tests carried out on the glass legs of the insulating stack of the 30 MV tandem Van de Graaff accelerator now under construction at Daresbury Laboratory. The tests to investigate the vulnerability of the legs when subjected to tensile stresses were designed to; establish the angle of rotation of the pads from which the stresses in the glass legs may be calculated, proof-test the structure and at the same time reveal any asymmetry in pad rotations or deflections, and to confirm the validity of the computer design analysis. (UK)

  10. Compliant Glass Seals for SOFC Stacks

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Yeong -Shyung [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Choi, Jung-Pyung [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Xu, Wei [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Stephens, Elizabeth V. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Koeppel, Brian J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Stevenson, Jeffry W. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Lara-Curzio, Edgar [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2014-04-30

    This report summarizes results from experimental and modeling studies performed by participants in the Solid-State Energy Conversion Alliance (SECA) Core Technology Program, which indicate that compliant glass-based seals offer a number of potential advantages over conventional seals based on de-vitrifying glasses, including reduced stresses during stack operation and thermal cycling, and the ability to heal micro-damage induced during thermal cycling. The properties and composition of glasses developed and/or investigated in these studies are reported, along with results from long-term (up to 5,800h) evaluations of seals based on a compliant glass containing ceramic particles or ceramic fibers.

  11. Improved Direct Methanol Fuel Cell Stack

    Science.gov (United States)

    Wilson, Mahlon S.; Ramsey, John C.

    2005-03-08

    A stack of direct methanol fuel cells exhibiting a circular footprint. A cathode and anode manifold, tie-bolt penetrations and tie-bolts are located within the circular footprint. Each fuel cell uses two graphite-based plates. One plate includes a cathode active area that is defined by serpentine channels connecting the inlet and outlet cathode manifold. The other plate includes an anode active area defined by serpentine channels connecting the inlet and outlet of the anode manifold, where the serpentine channels of the anode are orthogonal to the serpentine channels of the cathode. Located between the two plates is the fuel cell active region.

  12. Displacive phase transformations and generalized stacking faults

    Czech Academy of Sciences Publication Activity Database

    Paidar, Václav; Ostapovets, Andriy; Duparc, O. H.; Khalfallah, O.

    2012-01-01

    Roč. 122, č. 3 (2012), s. 490-492 ISSN 0587-4246. [International Symposium on Physics of Materials, ISPMA /12./. Praha, 04.09.2011-08.09.2011] R&D Projects: GA AV ČR IAA100100920 Institutional research plan: CEZ:AV0Z10100520 Keywords : ab-initio calculations * close-packed structures * generalized stacking faults * homogeneous deformation * lattice deformation * many-body potentials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.531, year: 2012

  13. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

    International Nuclear Information System (INIS)

    Ioannou-Sougleridis, V; Dimitrakis, P; Vamvakas, V Em; Normand, P; Bonafos, C; Schamm, S; Mouti, A; Assayag, G Ben; Paillard, V

    2007-01-01

    Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal-insulator-semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology

  14. Computerized plutonium laboratory-stack monitoring system

    International Nuclear Information System (INIS)

    Stafford, R.G.; DeVore, R.K.

    1977-01-01

    The Los Alamos Scientific Laboratory has recently designed and constructed a Plutonium Research and Development Facility to meet design criteria imposed by the United States Energy Research and Development Administration. A primary objective of the design criteria is to assure environmental protection and to reliably monitor plutonium effluent via the ventilation exhaust systems. A state-of-the-art facility exhaust air monitoring system is described which establishes near ideal conditions for evaluating plutonium activity in the stack effluent. Total and static pressure sensing manifolds are incorporated to measure average velocity and integrated total discharge air volume. These data are logged at a computer which receives instrument data through a multiplex scanning system. A multipoint isokinetic sampling assembly with associated instrumentation is described. Continuous air monitors have been designed to sample from the isokinetic sampling assembly and transmit both instantaneous and integrated stack effluent concentration data to the computer and various cathode ray tube displays. The continuous air monitors also serve as room air monitors in the plutonium facility with the primary objective of timely evacuation of personnel if an above tolerance airborne plutonium concentration is detected. Several continuous air monitors are incorporated in the ventilation system to assist in identification of release problem areas

  15. Control of heteroepitaxial stacking by substrate miscut

    International Nuclear Information System (INIS)

    Bonham, S.W.; Flynn, C.P.

    1998-01-01

    We report studies of fcc epitaxial crystals, grown on Nb(110), in which the Nb surface offers a template for selection between the two alternative stackings, ABCA hor-ellipsis and ACBA hor-ellipsis of the fcc close-packed planes. The Nb templates were grown epitaxially about 500 Angstrom thick on sapphire (11 bar 20), and the fcc material studied was Cu 3 Au. From symmetry it is not possible for the perfect bcc (110) surface to cause any such selection, which is here attributed instead to vicinal miscut: the logarithm of the stacking ratio must be even in miscut along [001] and odd in miscut along [1 bar 10]. We find that the measured selectivity is small for miscuts less than about 0.5 degree, but approaches a factor 10 3 for miscuts along [1 bar 10] greater than about 1 degree. A mechanism for the selection process is discussed in terms of fingered mesostructures that grow on Nb(110) in this regime, as observed first by Zhou, Bonham, and Flynn. copyright 1998 The American Physical Society

  16. Generalized stacking fault energies of alloys.

    Science.gov (United States)

    Li, Wei; Lu, Song; Hu, Qing-Miao; Kwon, Se Kyun; Johansson, Börje; Vitos, Levente

    2014-07-02

    The generalized stacking fault energy (γ surface) provides fundamental physics for understanding the plastic deformation mechanisms. Using the ab initio exact muffin-tin orbitals method in combination with the coherent potential approximation, we calculate the γ surface for the disordered Cu-Al, Cu-Zn, Cu-Ga, Cu-Ni, Pd-Ag and Pd-Au alloys. Studying the effect of segregation of the solute to the stacking fault planes shows that only the local chemical composition affects the γ surface. The calculated alloying trends are discussed using the electronic band structure of the base and distorted alloys.Based on our γ surface results, we demonstrate that the previous revealed 'universal scaling law' between the intrinsic energy barriers (IEBs) is well obeyed in random solid solutions. This greatly simplifies the calculations of the twinning measure parameters or the critical twinning stress. Adopting two twinnability measure parameters derived from the IEBs, we find that in binary Cu alloys, Al, Zn and Ga increase the twinnability, while Ni decreases it. Aluminum and gallium yield similar effects on the twinnability.

  17. 3D Segmentations of Neuronal Nuclei from Confocal Microscope Image Stacks

    Directory of Open Access Journals (Sweden)

    Antonio eLaTorre

    2013-12-01

    Full Text Available In this paper, we present an algorithm to create 3D segmentations of neuronal cells from stacks of previously segmented 2D images. The idea behind this proposal is to provide a general method to reconstruct 3D structures from 2D stacks, regardless of how these 2D stacks have been obtained. The algorithm not only reuses the information obtained in the 2D segmentation, but also attempts to correct some typical mistakes made by the 2D segmentation algorithms (for example, under segmentation of tightly-coupled clusters of cells. We have tested our algorithm in a real scenario --- the segmentation of the neuronal nuclei in different layers of the rat cerebral cortex. Several representative images from different layers of the cerebral cortex have been considered and several 2D segmentation algorithms have been compared. Furthermore, the algorithm has also been compared with the traditional 3D Watershed algorithm and the results obtained here show better performance in terms of correctly identified neuronal nuclei.

  18. Description of gasket failure in a 7 cell PEMFC stack

    Energy Technology Data Exchange (ETDEWEB)

    Husar, Attila; Serra, Maria [Institut de Robotica i Informatica Industrial, Parc Tecnologic de Barcelona, Edifici U, C. Llorens i Artigas, 4-6, 2a Planta, 08028 Barcelona (Spain); Kunusch, Cristian [Laboratorio de Electronica Industrial Control e Instrumentacion, Facultad de Ingenieria, UNLP (Argentina)

    2007-06-10

    This article presents the data and the description of a fuel cell stack that failed due to gasket degradation. The fuel cell under study is a 7 cell stack. The unexpected change in several variables such as temperature, pressure and voltage indicated the possible failure of the stack. The stack was monitored over a 6 h period in which data was collected and consequently analyzed to conclude that the fuel cell stack failed due to a crossover leak on the anode inlet port located on the cathode side gasket of cell 2. This stack failure analysis revealed a series of indicators that could be used by a super visional controller in order to initiate a shutdown procedure. (author)

  19. Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

    International Nuclear Information System (INIS)

    Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru

    2012-01-01

    Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.

  20. Organic photovoltaic cells utilizing ultrathin sensitizing layer

    Science.gov (United States)

    Forrest, Stephen R [Ann Arbor, MI; Yang, Fan [Piscataway, NJ; Rand, Barry P [Somers, NY

    2011-09-06

    A photosensitive device includes a plurality of organic photoconductive materials disposed in a stack between a first electrode and a second electrode, including a first continuous layer of donor host material, a second continuous layer of acceptor host material, and at least one other organic photoconductive material disposed as a plurality of discontinuous islands between the first continuous layer and the second continuous layer. Each of these other photoconductive materials has an absorption spectra different from the donor host material and the acceptor host material. Preferably, each of the discontinuous islands consists essentially of a crystallite of the respective organic photoconductive material, and more preferably, the crystallites are nanocrystals.

  1. Local receptive field constrained stacked sparse autoencoder for classification of hyperspectral images.

    Science.gov (United States)

    Wan, Xiaoqing; Zhao, Chunhui

    2017-06-01

    As a competitive machine learning algorithm, the stacked sparse autoencoder (SSA) has achieved outstanding popularity in exploiting high-level features for classification of hyperspectral images (HSIs). In general, in the SSA architecture, the nodes between adjacent layers are fully connected and need to be iteratively fine-tuned during the pretraining stage; however, the nodes of previous layers further away may be less likely to have a dense correlation to the given node of subsequent layers. Therefore, to reduce the classification error and increase the learning rate, this paper proposes the general framework of locally connected SSA; that is, the biologically inspired local receptive field (LRF) constrained SSA architecture is employed to simultaneously characterize the local correlations of spectral features and extract high-level feature representations of hyperspectral data. In addition, the appropriate receptive field constraint is concurrently updated by measuring the spatial distances from the neighbor nodes to the corresponding node. Finally, the efficient random forest classifier is cascaded to the last hidden layer of the SSA architecture as a benchmark classifier. Experimental results on two real HSI datasets demonstrate that the proposed hierarchical LRF constrained stacked sparse autoencoder and random forest (SSARF) provides encouraging results with respect to other contrastive methods, for instance, the improvements of overall accuracy in a range of 0.72%-10.87% for the Indian Pines dataset and 0.74%-7.90% for the Kennedy Space Center dataset; moreover, it generates lower running time compared with the result provided by similar SSARF based methodology.

  2. Development of the electric utility dispersed use PAFC stack

    Energy Technology Data Exchange (ETDEWEB)

    Horiuchi, Hiroshi; Kotani, Ikuo [Mitsubishi Electric Co., Kobe (Japan); Morotomi, Isamu [Kansai Electric Power Co., Hyogo (Japan)] [and others

    1996-12-31

    Kansai Electric Power Co. and Mitsubishi Electric Co. have been developing the electric utility dispersed use PAFC stack operated under the ambient pressure. The new cell design have been developed, so that the large scale cell (1 m{sup 2} size) was adopted for the stack. To confirm the performance and the stability of the 1 m{sup 2} scale cell design, the short stack study had been performed.

  3. Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

    Science.gov (United States)

    Hayashi, Shohei; Yamashita, Tamotsu; Senzaki, Junji; Miyazato, Masaki; Ryo, Mina; Miyajima, Masaaki; Kato, Tomohisa; Yonezawa, Yoshiyuki; Kojima, Kazutoshi; Okumura, Hajime

    2018-04-01

    The origin of expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes was investigated by the stress-current test. At a stress-current density lower than 25 A cm-2, triangular stacking faults were formed from basal-plane dislocations in the epitaxial layer. At a stress-current density higher than 350 A cm-2, both triangular and long-zone-shaped stacking faults were formed from basal-plane dislocations that converted into threading edge dislocations near the interface between the epitaxial layer and the substrate. In addition, the conversion depth of basal-plane dislocations that expanded into the stacking fault was inside the substrate deeper than the interface. These results indicate that the conversion depth of basal-plane dislocations strongly affects the threshold stress-current density at which the expansion of stacking faults occurs.

  4. Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

    Directory of Open Access Journals (Sweden)

    E. A. Henriksen

    2012-01-01

    Full Text Available The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find both that the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau-level splittings due to a lifting of the valley degeneracy are clearly observed.

  5. Method for monitoring stack gases for uranium activity

    International Nuclear Information System (INIS)

    Beverly, C.R.; Ernstberger, H.G.

    1988-01-01

    A method for sampling stack gases emanating from the purge cascade of a gaseous diffusion cascade system utilized to enrich uranium for determining the presence and extent of uranium in the stack gases in the form of gaseous uranium hexafluoride, is described comprising the steps of removing a side stream of gases from the stack gases, contacting the side stream of the stack gases with a stream of air sufficiently saturated with moisture for reacting with and converting any gaseous uranium hexafluroide contracted thereby in the side stream of stack gases to particulate uranyl fluoride. Thereafter contacting the side stream of stack gases containing the particulate uranyl fluoride with moving filter means for continuously intercepting and conveying the intercepted particulate uranyl fluoride away from the side stream of stack gases, and continually scanning the moving filter means with radiation monitoring means for sensing the presence and extent of particulate uranyl fluoride on the moving filter means which is indicative of the extent of particulate uranyl fluoride in the side stream of stack gases which in turn is indicative of the presence and extent of uranium hexafluoride in the stack gases

  6. Highly Efficient, Durable Regenerative Solid Oxide Stack, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Precision Combustion, Inc. (PCI) proposes to develop a highly efficient regenerative solid oxide stack design. Novel structural elements allow direct internal...

  7. Fine-scale structure of the mid-mantle characterised by global stacks of PP precursors

    Science.gov (United States)

    Bentham, H. L. M.; Rost, S.; Thorne, M. S.

    2017-08-01

    Subduction zones are likely a major source of compositional heterogeneities in the mantle, which may preserve a record of the subduction history and mantle convection processes. The fine-scale structure associated with mantle heterogeneities can be studied using the scattered seismic wavefield that arrives as coda to or as energy preceding many body wave arrivals. In this study we analyse precursors to PP by creating stacks recorded at globally distributed stations. We create stacks aligned on the PP arrival in 5° distance bins (with range 70-120°) from 600 earthquakes recorded at 193 stations stacking a total of 7320 seismic records. As the energy trailing the direct P arrival, the P coda, interferes with the PP precursors, we suppress the P coda by subtracting a best fitting exponential curve to this energy. The resultant stacks show that PP precursors related to scattering from heterogeneities in the mantle are present for all distances. Lateral variations are explored by producing two regional stacks across the Atlantic and Pacific hemispheres, but we find only negligible differences in the precursory signature between these two regions. The similarity of these two regions suggests that well mixed subducted material can survive at upper and mid-mantle depth. To describe the scattered wavefield in the mantle, we compare the global stacks to synthetic seismograms generated using a Monte Carlo phonon scattering technique. We propose a best-fitting layered heterogeneity model, BRT2017, characterised by a three layer mantle with a background heterogeneity strength (ɛ = 0.8%) and a depth-interval of increased heterogeneity strength (ɛ = 1%) between 1000 km and 1800 km. The scalelength of heterogeneity is found to be 8 km throughout the mantle. Since mantle heterogeneity of 8 km scale may be linked to subducted oceanic crust, the detection of increased heterogeneity at mid-mantle depths could be associated with stalled slabs due to increases in viscosity

  8. Strontium titanate/silicon-based terahertz photonic crystal multilayer stack

    Energy Technology Data Exchange (ETDEWEB)

    Xin, J.Z.; Jim, K.L.; Tsang, Y.H.; Chan, H.L.W.; Leung, C.W. [Hong Kong Polytechnic University, Department of Applied Physics and Materials Research Centre, Kowloon, Hong Kong (China); Yang, J.; Gong, X.J.; Chen, L.Q.; Gao, F. [Chinese Academy of Sciences, Institute of Biomedical and Health Engineering, Shenzhen Institutes of Advanced Technology, Shenzhen (China)

    2012-04-15

    A one-dimensional photonic crystal working in the terahertz (THz) range was designed and implemented. To facilitate the design, the transmission properties of strontium titanate crystals were characterized by THz-time-domain spectroscopy. Relatively high refractive index ({proportional_to}18.5) and transmission ratio (0.08) were observed between 0.2 to 1 THz. A stacked structure of (Si d{sub Si}/STO d{sub STO}){sub N} /Si d{sub Si} was then designed, with transmission spectra calculated by the transfer matrix method. The effects of the filling ratio (d{sub STO}/(d{sub Si}+d{sub STO})), periodicity (d{sub Si}+d{sub STO}) and the number of repeats N on the transmission of PC were investigated. The effect of introducing a defect layer was also studied. Based on these, Si/STO multilayers with STO defect thickness of 125 {mu}m and 200 {mu}m were measured. The shift of the defect mode was observed and compared with the calculations. (orig.)

  9. Stable and Selective Humidity Sensing Using Stacked Black Phosphorus Flakes.

    Science.gov (United States)

    Yasaei, Poya; Behranginia, Amirhossein; Foroozan, Tara; Asadi, Mohammad; Kim, Kibum; Khalili-Araghi, Fatemeh; Salehi-Khojin, Amin

    2015-10-27

    Black phosphorus (BP) atomic layers are known to undergo chemical degradation in humid air. Yet in more robust configurations such as films, composites, and embedded structures, BP can potentially be utilized in a large number of practical applications. In this study, we explored the sensing characteristics of BP films and observed an ultrasensitive and selective response toward humid air with a trace-level detection capability and a very minor drift over time. Our experiments show that the drain current of the BP sensor increases by ∼4 orders of magnitude as the relative humidity (RH) varies from 10% to 85%, which ranks it among the highest ever reported values for humidity detection. The mechanistic studies indicate that the operation principle of the BP film sensors is based on the modulation in the leakage ionic current caused by autoionization of water molecules and ionic solvation of the phosphorus oxoacids produced on moist BP surfaces. Our stability tests reveal that the response of the BP film sensors remains nearly unchanged after prolonged exposures (up to 3 months) to ambient conditions. This study opens up the route for utilizing BP stacked films in many potential applications such as energy generation/storage systems, electrocatalysis, and chemical/biosensing.

  10. Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks

    Directory of Open Access Journals (Sweden)

    S. C. Bodepudi

    2016-01-01

    Full Text Available Chemical Vapor Deposition grown multilayer graphene (MLG exhibits large out-of-plane magnetoresistance due to interlayer magnetoresistance (ILMR effect. It is essential to identify the factors that influence this effect in order to explore its potential in magnetic sensing and data storage applications. It has been demonstrated before that the ILMR effect is sensitive to the interlayer coupling and the orientation of the magnetic field with respect to the out-of-plane (c-axis direction. In this work, we investigate the role of MLG thickness on ILMR effect. Our results show that the magnitude of ILMR effect increases with the number of graphene layers in the MLG stack. Surprisingly, thicker devices exhibit field induced resistance switching by a factor of at least ~107. This effect persists even at room temperature and to our knowledge such large magnetoresistance values have not been reported before in the literature at comparable fields and temperatures. In addition, an oscillatory MR effect is observed at higher field values. A physical explanation of this effect is presented, which is consistent with our experimental scenario.

  11. Durable solid oxide electrolysis cells and stacks

    Energy Technology Data Exchange (ETDEWEB)

    Ming Chen

    2010-08-15

    The purpose of this project was to make a substantial contribution to development of a cost competitive electrolysis technology based on solid oxide cells. The strategy was to address what had been identified as the key issues in previous research projects. Accordingly five lines of work were carried out in the here reported project: 1) Cell and stack element testing and post test characterization to identify major degradation mechanisms under electrolysis operation. 2) Development of interconnects and coatings to allow stable electrolysis operation at approx850 deg. C or above. 3) Development of seals with reduced Si emission. 4) Development of durable SOEC cathodes. 5) Modeling. Good progress has been made on several of the planned activities. The outcome and most important achievements of the current project are listed for the five lines of the work. (LN)

  12. ATLAS software stack on ARM64

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00529764; The ATLAS collaboration; Stewart, Graeme; Seuster, Rolf; Quadt, Arnulf

    2017-01-01

    This paper reports on the port of the ATLAS software stack onto new prototype ARM64 servers. This included building the “external” packages that the ATLAS software relies on. Patches were needed to introduce this new architecture into the build as well as patches that correct for platform specific code that caused failures on non-x86 architectures. These patches were applied such that porting to further platforms will need no or only very little adjustments. A few additional modifications were needed to account for the different operating system, Ubuntu instead of Scientific Linux 6 / CentOS7. Selected results from the validation of the physics outputs on these ARM 64-bit servers will be shown. CPU, memory and IO intensive benchmarks using ATLAS specific environment and infrastructure have been performed, with a particular emphasis on the performance vs. energy consumption.

  13. ATLAS software stack on ARM64

    Science.gov (United States)

    Smith, Joshua Wyatt; Stewart, Graeme A.; Seuster, Rolf; Quadt, Arnulf; ATLAS Collaboration

    2017-10-01

    This paper reports on the port of the ATLAS software stack onto new prototype ARM64 servers. This included building the “external” packages that the ATLAS software relies on. Patches were needed to introduce this new architecture into the build as well as patches that correct for platform specific code that caused failures on non-x86 architectures. These patches were applied such that porting to further platforms will need no or only very little adjustments. A few additional modifications were needed to account for the different operating system, Ubuntu instead of Scientific Linux 6 / CentOS7. Selected results from the validation of the physics outputs on these ARM 64-bit servers will be shown. CPU, memory and IO intensive benchmarks using ATLAS specific environment and infrastructure have been performed, with a particular emphasis on the performance vs. energy consumption.

  14. Stacked generalization: an introduction to super learning.

    Science.gov (United States)

    Naimi, Ashley I; Balzer, Laura B

    2018-04-10

    Stacked generalization is an ensemble method that allows researchers to combine several different prediction algorithms into one. Since its introduction in the early 1990s, the method has evolved several times into a host of methods among which is the "Super Learner". Super Learner uses V-fold cross-validation to build the optimal weighted combination of predictions from a library of candidate algorithms. Optimality is defined by a user-specified objective function, such as minimizing mean squared error or maximizing the area under the receiver operating characteristic curve. Although relatively simple in nature, use of Super Learner by epidemiologists has been hampered by limitations in understanding conceptual and technical details. We work step-by-step through two examples to illustrate concepts and address common concerns.

  15. Manifold seal structure for fuel cell stack

    Science.gov (United States)

    Collins, William P.

    1988-01-01

    The seal between the sides of a fuel cell stack and the gas manifolds is improved by adding a mechanical interlock between the adhesive sealing strip and the abutting surface of the manifolds. The adhesive is a material which can flow to some extent when under compression, and the mechanical interlock is formed providing small openings in the portion of the manifold which abuts the adhesive strip. When the manifolds are pressed against the adhesive strips, the latter will flow into and through the manifold openings to form buttons or ribs which mechanically interlock with the manifolds. These buttons or ribs increase the bond between the manifolds and adhesive, which previously relied solely on the adhesive nature of the adhesive.

  16. Actuators Using Piezoelectric Stacks and Displacement Enhancers

    Science.gov (United States)

    Bar-Cohen, Yoseph; Sherrit, Stewart; Bao, Xiaoqi; Badescu, Mircea; Lee, Hyeong Jae; Walkenmeyer, Phillip; Lih, Shyh-Shiuh

    2015-01-01

    Actuators are used to drive all active mechanisms including machines, robots, and manipulators to name a few. The actuators are responsible for moving, manipulating, displacing, pushing and executing any action that is needed by the mechanism. There are many types and principles of actuation that are responsible for these movements ranging from electromagnetic, electroactive, thermo-mechanic, piezoelectric, electrostrictive etc. Actuators are readily available from commercial producers but there is a great need for reducing their size, increasing their efficiency and reducing their weight. Studies at JPL’s Non Destructive Evaluation and Advanced Actuators (NDEAA) Laboratory have been focused on the use of piezoelectric stacks and novel designs taking advantage of piezoelectric’s potential to provide high torque/force density actuation and high electromechanical conversion efficiency. The actuators/motors that have been developed and reviewed in this paper are operated by various horn configurations as well as the use of pre-stress flexures that make them thermally stable and increases their coupling efficiency. The use of monolithic designs that pre-stress the piezoelectric stack eliminates the use of compression stress bolt. These designs enable the embedding of developed solid-state motors/actuators in any structure with the only macroscopically moving parts are the rotor or the linear translator. Finite element modeling and design tools were used to determine the requirements and operation parameters and the results were used to simulate, design and fabricate novel actuators/motors. The developed actuators and performance will be described and discussed in this paper.

  17. Electronic States of High-k Oxides in Gate Stack Structures

    Science.gov (United States)

    Zhu, Chiyu

    In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen

  18. Note: Resonance magnetoelectric interactions in laminate of FeCuNbSiB and multilayer piezoelectric stack for magnetic sensor

    Science.gov (United States)

    Li, Jianqiang; Lu, Caijiang; Xu, Changbao; Zhong, Ming

    2015-09-01

    This paper develops a simple miniature magnetoelectric (ME) laminate FeCuNbSiB/PZT-stack made up of magnetostrictive Fe73.5Cu1Nb3Si13.5B9 (FeCuNbSiB) foils and piezoelectric Pb(Zr, Ti)O3 (PZT) multilayer stack vibrator. Resonant ME interactions of FeCuNbSiB/PZT-stack with different layers of FeCuNbSiB foil (L) are investigated in detail. The experimental results show that the ME voltage coefficient reaches maximum value of 141.5 (V/cm Oe) for FeCuNbSiB/PZT-stack with L = 6. The AC-magnetic sensitivities can reach 524.29 mV/Oe and 1.8 mV/Oe under resonance 91.6 kHz and off-resonance 1 kHz, respectively. The FeCuNbSiB/PZT-stack can distinguish small dc-magnetic field of ˜9 nT. The results indicate that the proposed ME composites are very promising for the cheap room-temperature magnetic field sensing technology.

  19. A preliminary study of a miniature planar 6-cell PEMFC stack combined with a small hydrogen storage canister

    Science.gov (United States)

    Zhang, Xigui; Zheng, Dan; Wang, Tao; Chen, Cong; Cao, Jianyu; Yan, Jian; Wang, Wenming; Liu, Juanying; Liu, Haohan; Tian, Juan; Li, Xinxin; Yang, Hui; Xia, Baojia

    The fabrication and performance evaluation of a miniature 6-cell PEMFC stack based on Micro-Electronic-Mechanical-System (MEMS) technology is presented in this paper. The stack with a planar configuration consists of 6-cells in serial interconnection by spot welding one cell anode with another cell cathode. Each cell was made by sandwiching a membrane-electrode-assembly (MEA) between two flow field plates fabricated by a classical MEMS wet etching method using silicon wafer as the original material. The plates were made electrically conductive by sputtering a Ti/Pt/Au composite metal layer on their surfaces. The 6-cells lie in the same plane with a fuel buffer/distributor as their support, which was fabricated by the MEMS silicon-glass bonding technology. A small hydrogen storage canister was used as fuel source. Operating on dry H 2 at a 40 ml min -1 flow rate and air-breathing conditions at room temperature and atmospheric pressure, the linear polarization experiment gave a measured peak power of 0.9 W at 250 mA cm -2 for the stack and average power density of 104 mW cm -2 for each cell. The results suggested that the stack has reasonable performance benefiting from an even fuel supply. But its performance tended to deteriorate with power increase, which became obvious at 600 mW. This suggests that the stack may need some power assistance, from say supercapacitors to maintain its stability when operated at higher power.

  20. Chirality-induced magnon transport in AA-stacked bilayer honeycomb chiral magnets.

    Science.gov (United States)

    Owerre, S A

    2016-11-30

    In this Letter, we study the magnetic transport in AA-stacked bilayer honeycomb chiral magnets coupled either ferromagnetically or antiferromagnetically. For both couplings, we observe chirality-induced gaps, chiral protected edge states, magnon Hall and magnon spin Nernst effects of magnetic spin excitations. For ferromagnetically coupled layers, thermal Hall and spin Nernst conductivities do not change sign as function of magnetic field or temperature similar to single-layer honeycomb ferromagnetic insulator. In contrast, for antiferromagnetically coupled layers, we observe a sign change in the thermal Hall and spin Nernst conductivities as the magnetic field is reversed. We discuss possible experimental accessible honeycomb bilayer quantum materials in which these effects can be observed.

  1. The performance of silicon detectors for the SiliPET project: A small animal PET scanner based on stacks of silicon detectors

    International Nuclear Information System (INIS)

    Auricchio, Natalia; Domenico, Giovanni di; Zavattini, Guido; Milano, Luciano; Malaguti, Roberto

    2011-01-01

    We propose a new scanner for small animal Positron Emission Tomography (PET) based on stacks of double sided silicon detectors. Each stack is made of 40 planar detectors with dimension 60x60x1 mm 3 and 128 orthogonal strips on both sides to read the two coordinates of interaction, the third being the detector number in the stack. Multiple interactions in a stack are discarded by an exclusive OR applied between each detector plane of a stack. In this way we achieve a precise determination of the interaction point of the two 511 keV photons. The reduced dimensions of the scanner also improve the solid angle coverage resulting in a high sensitivity. Preliminary results were obtained with MEGA prototype tracker (11 double sided Si detector layers), divided into two stacks 2 cm apart made of, respectively, 5 and 6 prototype layers, placing a small spherical 22 Na source in different positions. We report on the results, spatial resolution, imaging and timing performances obtained with double sided silicon detectors, manufactured by ITC-FBK, having an active area of 3x3 cm 2 , thickness of 1 mm and a strip pitch of 500μm. Two different strip widths of 300 and 200μm equipped with 64 orthogonal p and n strips on opposite sides were read out with the VATAGP2.5 ASIC, a 128-channel 'general purpose' charge sensitive amplifier.

  2. The Effects of Graphene Stacking on the Performance of Methane Sensor: A First-Principles Study on the Adsorption, Band Gap and Doping of Graphene

    Directory of Open Access Journals (Sweden)

    Ning Yang

    2018-02-01

    Full Text Available The effects of graphene stacking are investigated by comparing the results of methane adsorption energy, electronic performance, and the doping feasibility of five dopants (i.e., B, N, Al, Si, and P via first-principles theory. Both zigzag and armchair graphenes are considered. It is found that the zigzag graphene with Bernal stacking has the largest adsorption energy on methane, while the armchair graphene with Order stacking is opposite. In addition, both the Order and Bernal stacked graphenes possess a positive linear relationship between adsorption energy and layer number. Furthermore, they always have larger adsorption energy in zigzag graphene. For electronic properties, the results show that the stacking effects on band gap are significant, but it does not cause big changes to band structure and density of states. In the comparison of distance, the average interlamellar spacing of the Order stacked graphene is the largest. Moreover, the adsorption effect is the result of the interactions between graphene and methane combined with the change of graphene’s structure. Lastly, the armchair graphene with Order stacking possesses the lowest formation energy in these five dopants. It could be the best choice for doping to improve the methane adsorption.

  3. A dual shared stack for FSLM in Erika Enterprise

    NARCIS (Netherlands)

    Balasubramanian, S.M.N.; Afshar, S.; Gai, P.; Behnam, M.; Bril, R.J.

    2017-01-01

    Recently, the flexible spin-lock model (FSLM) has been introduced, unifying spin-based and suspension-based resource sharing protocols for real-time multi-core platforms. Unlike the multiprocessor stack resource policy (MSRP), FSLM doesn’t allow tasks on a core to share a single stack, however. In

  4. Long Josephson Junction Stack Coupled to a Cavity

    DEFF Research Database (Denmark)

    Madsen, Søren Peder; Pedersen, Niels Falsig; Groenbech-Jensen, N.

    2007-01-01

    A stack of inductively coupled long Josephson junctions are modeled as a system of coupled sine-Gordon equations. One boundary of the stack is coupled electrically to a resonant cavity. With one fluxon in each Josephson junction, the inter-junction fluxon forces are repulsive. We look at a possible...... transition, induced by the cavity, to a bunched state....

  5. Efficient Context Switching for the Stack Cache: Implementation and Analysis

    DEFF Research Database (Denmark)

    Abbaspourseyedi, Sahar; Brandner, Florian; Naji, Amine

    2015-01-01

    , the analysis of the stack cache was limited to individual tasks, ignoring aspects related to multitasking. A major drawback of the original stack cache design is that, due to its simplicity, it cannot hold the data of multiple tasks at the same time. Consequently, the entire cache content needs to be saved...

  6. Analysis of preemption costs for the stack cache

    DEFF Research Database (Denmark)

    Naji, Amine; Abbaspour, Sahar; Brandner, Florian

    2018-01-01

    , the analysis of the stack cache was limited to individual tasks, ignoring aspects related to multitasking. A major drawback of the original stack cache design is that, due to its simplicity, it cannot hold the data of multiple tasks at the same time. Consequently, the entire cache content needs to be saved...

  7. Simultaneous stack-gas scrubbing and waste water treatment

    Science.gov (United States)

    Poradek, J. C.; Collins, D. D.

    1980-01-01

    Simultaneous treatment of wastewater and S02-laden stack gas make both treatments more efficient and economical. According to results of preliminary tests, solution generated by stack gas scrubbing cycle reduces bacterial content of wastewater. Both processess benefit by sharing concentrations of iron.

  8. A Software Managed Stack Cache for Real-Time Systems

    DEFF Research Database (Denmark)

    Jordan, Alexander; Abbaspourseyedi, Sahar; Schoeberl, Martin

    2016-01-01

    In a real-time system, the use of a scratchpad memory can mitigate the difficulties related to analyzing data caches, whose behavior is inherently hard to predict. We propose to use a scratchpad memory for stack allocated data. While statically allocating stack frames for individual functions...

  9. Thin Co/Ni-based bottom pinned spin-transfer torque magnetic random access memory stacks with high annealing tolerance

    Energy Technology Data Exchange (ETDEWEB)

    Tomczak, Y., E-mail: Yoann.Tomczak@imec.be [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium); Swerts, J.; Mertens, S.; Lin, T.; Couet, S.; Sankaran, K.; Pourtois, G.; Kim, W.; Souriau, L.; Van Elshocht, S.; Kar, G.; Furnemont, A. [IMEC Kapeldreef 75, B-3001 Leuven (Belgium); Liu, E. [Department of Chemistry, KU Leuven (University of Leuven), Celestijnenlaan 200F, B-3001 Leuven (Belgium)

    2016-01-25

    Spin-transfer torque magnetic random access memory (STT-MRAM) is considered as a replacement for next generation embedded and stand-alone memory applications. One of the main challenges in the STT-MRAM stack development is the compatibility of the stack with CMOS process flows in which thermal budgets up to 400 °C are applied. In this letter, we report on a perpendicularly magnetized MgO-based tunnel junction (p-MTJ) on a thin Co/Ni perpendicular synthetic antiferromagnetic layer with high annealing tolerance. Tunnel magneto resistance (TMR) loss after annealing occurs when the reference layer loses its perpendicular magnetic anisotropy due to reduction of the CoFeB/MgO interfacial anisotropy. A stable Co/Ni based p-MTJ stack with TMR values of 130% at resistance-area products of 9 Ω μm{sup 2} after 400 °C anneal is achieved via moment control of the Co/Ta/CoFeB reference layer. Thinning of the CoFeB polarizing layer down to 0.8 nm is the key enabler to achieve 400 °C compatibility with limited TMR loss. Thinning the Co below 0.6 nm leads to a loss of the antiferromagnetic interlayer exchange coupling strength through Ru. Insight into the thickness and moment engineering of the reference layer is displayed to obtain the best magnetic properties and high thermal stability for thin Co/Ni SAF-based STT-MRAM stacks.

  10. Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Hultqvist, Adam; Bent, Stacey F. [Department of Chemical Engineering, Stanford University, Stanford, California 94305 (United States); Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2015-07-20

    Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

  11. Routes to a commercially viable PEM fuel cell stack

    Energy Technology Data Exchange (ETDEWEB)

    Newton, J.; Foster, S.E.; Hodgson, D.; Marrett, A.

    2002-07-01

    This report describes the results of a project to design and build a 10 kW{sub e} proton exchange membrane fuel cell (PEMFC) stack, including membrane electrode assemblies (MEAs), bipolar plates and stack hardware. The aim was to prove the design concept and to demonstrate functionality by operating the stack at >1 kW{sub e}/L and 500 W/kg for 200 hours operation. The project was extended to include the assembly and testing of two additional 1 kW{sub e} PEMFC stacks based on coated metal components. Low equivalent weight perfluorinated ionomer ion exchange membranes were prepared and were found to give a superior electrochemical performance to commercial materials. A technique to etch various stainless steel grades and control processes was successfully developed and optimised. Coatings for stainless steel and titanium were successfully developed and met the required performance criteria. All PEMFC stack components were selected and designed to enable subsequent commercial manufacture.

  12. Characterizing edge and stacking structures of exfoliated graphene by photoelectron diffraction

    International Nuclear Information System (INIS)

    Matsui, Fumihiko; Ishii, Ryo; Matsuda, Hiroyuki; Morita, Makoto; Kitagawa, Satoshi; Koh, Shinji; Daimon, Hiroshi; Matsushita, Tomohiro

    2013-01-01

    The two-dimensional C 1s photoelectron intensity angular distributions (PIADs) and spectra of exfoliated graphene flakes and crystalline graphite were measured using a focused soft X-ray beam. Suitable graphene samples were selected by thickness characterization using Raman spectromicroscopy after transferring mechanically exfoliated graphene flakes onto a 90-nm-thick SiO 2 film. In every PIAD, a Kagomé interference pattern was observed, particularly clearly in the monolayer graphene PIAD. Its origin is the overlap of the diffraction rings formed by an in-plane C-C bond honeycomb lattice. Thus, the crystal orientation of each sample can be determined. In the case of bilayer graphene, PIAD was threefold-symmetric, while those of monolayer graphene and crystalline graphite were sixfold-symmetric. This is due to the stacking structure of bilayer graphene. From comparisons with the multiple scattering PIAD simulation results, the way of layer stacking as well as the termination types in the edge regions of bilayer graphene flakes were determined. Furthermore, two different C 1s core levels corresponding to the top and bottom layers of bilayer graphene were identified. A chemical shift to a higher binding energy by 0.25 eV for the bottom layer was attributed to interfacial interactions. (author)

  13. Multilayer stacks obtained by ion assisted EB PVD aimed at thermal barrier coating

    Energy Technology Data Exchange (ETDEWEB)

    Roos, E.; Maile, K.; Lyutovich, A. [Stuttgart Univ. (DE). Materialpruefungsanstalt (MPA)

    2010-07-01

    Thermal Barrier Coating (TBC) using Electron Beam Physical Vapour Deposition (EB PVD) is widely implemented, especially for aero-engine turbine blades. Generally, multilayer stacks are used for these aims. For the additional improvement of intermediate layers with graded transitions to the initial Ni-based alloy, the use of accelerated ions in the EBPVD-process is advantageous. The effect of the substrate bias potential, ion current density and deposition temperature on the structure and properties of Ti and Zr intermediate layers are investigated. The morphology of the films is studied using optical microscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM). It is found that the surface morphology becomes smoother with rising bias potential and decreasing ion current density. Measurements of Vicker's micro-hardness performed on these coatings have shown its increase with higher values of the bias and its reduction with the growing temperature. This effect is caused by the observed decrease in grain size and higher porosity of the films. A multilayer coating system Ni (based substrate)-Si-Si{sub x}Al{sub y}-Al with graded transitions between the layers is obtained using ion assisted EBPVD. Architecture of a multilayer stack for TBC with graded transitions is proposed. (orig.)

  14. Ultrasonic, microwave, and millimeter wave inspection techniques for adhesively bonded stacked open honeycomb core composites

    Science.gov (United States)

    Thomson, Clint D.; Cox, Ian; Ghasr, Mohammad Tayeb Ahmed; Ying, Kuang P.; Zoughi, Reza

    2015-03-01

    Honeycomb sandwich composites are used extensively in the aerospace industry to provide stiffness and thickness to lightweight structures. A common fabrication method for thick, curved sandwich structures is to stack and bond multiple honeycomb layers prior to machining core curvatures. Once bonded, each adhesive layer must be inspected for delaminations and the presence of unwanted foreign materials. From a manufacturing and cost standpoint, it can be advantageous to inspect the open core prior to face sheet closeout in order to reduce end-article scrap rates. However, by nature, these honeycomb sandwich composite structures are primarily manufactured from low permittivity and low loss materials making detection of delamination and some of the foreign materials (which also are low permittivity and low loss) quite challenging in the microwave and millimeter wave regime. Likewise, foreign materials such as release film in adhesive layers can be sufficiently thin as to not cause significant attenuation in through-transmission ultrasonic signals, making them difficult to detect. This paper presents a collaborative effort intended to explore the efficacy of different non-contact NDI techniques for detecting flaws in a stacked open fiberglass honeycomb core panel. These techniques primarily included air-coupled through-transmission ultrasonics, single-sided wideband synthetic aperture microwave and millimeter-wave imaging, and lens-focused technique. The goal of this investigation has been to not only evaluate the efficacy of these techniques, but also to determine their unique advantages and limitations for evaluating parameters such as flaw type, flaw size, and flaw depth.

  15. Backside versus frontside advanced chemical analysis of high-k/metal gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, E., E-mail: eugenie.martinez@cea.fr [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Saidi, B. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Veillerot, M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Caubet, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Fabbri, J-M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Piallat, F. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Gassilloud, R. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Schamm-Chardon, S. [CEMES-CNRS et Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)

    2015-08-15

    Highlights: • The backside approach is a promising solution for advanced chemical characterization of future MOSFETs. • Frontside ToF-SIMS and Auger depth profiles are affected by cumulative mixing effects and thus not relevant for analyzing ultra-thin layers. • Higher in-depth resolution is possible in the backside approach for Auger and ToF-SIMS depth profiling. • Backside depth profiling allows revealing ultra-thin layers and elemental in-depth redistribution inside high-k/metal gate stacks. • Backside XPS allows preserving the full metal gate, thus enabling the analysis of real technological samples. - Abstract: Downscaling of transistors beyond the 14 nm technological node requires the implementation of new architectures and materials. Advanced characterization methods are needed to gain information about the chemical composition of buried layers and interfaces. An effective approach based on backside analysis is presented here. X-ray photoelectron spectroscopy, Auger depth profiling and time-of-flight secondary ions mass spectrometry are combined to investigate inter-diffusion phenomena. To highlight improvements related to the backside method, backside and frontside analyses are compared. Critical information regarding nitrogen, oxygen and aluminium redistribution inside the gate stacks is obtained only in the backside configuration.

  16. Equilibrium chemical vapor deposition growth of Bernal-stacked bilayer graphene.

    Science.gov (United States)

    Zhao, Pei; Kim, Sungjin; Chen, Xiao; Einarsson, Erik; Wang, Miao; Song, Yenan; Wang, Hongtao; Chiashi, Shohei; Xiang, Rong; Maruyama, Shigeo

    2014-11-25

    Using ethanol as the carbon source, self-limiting growth of AB-stacked bilayer graphene (BLG) has been achieved on Cu via an equilibrium chemical vapor deposition (CVD) process. We found that during this alcohol catalytic CVD (ACCVD) a source-gas pressure range exists to break the self-limitation of monolayer graphene on Cu, and at a certain equilibrium state it prefers to form uniform BLG with a high surface coverage of ∼94% and AB-stacking ratio of nearly 100%. More importantly, once the BLG is completed, this growth shows a self-limiting manner, and an extended ethanol flow time does not result in additional layers. We investigate the mechanism of this equilibrium BLG growth using isotopically labeled (13)C-ethanol and selective surface aryl functionalization, and results reveal that during the equilibrium ACCVD process a continuous substitution of graphene flakes occurs to the as-formed graphene and the BLG growth follows a layer-by-layer epitaxy mechanism. These phenomena are significantly in contrast to those observed for previously reported BLG growth using methane as precursor.

  17. Reflector imaging by diffraction stacking with stacking velocity analysis; Jugo sokudo kaiseki wo tomonau sanran jugoho ni yoru hanshamen imaging

    Energy Technology Data Exchange (ETDEWEB)

    Matsushima, J; Rokugawa, S; Kato, Y [The University of Tokyo, Tokyo (Japan). Faculty of Engineering; Yokota, T [Japan National Oil Corp., Tokyo (Japan); Miyazaki, T [Geological Survey of Japan, Tsukuba (Japan)

    1997-10-22

    Concerning seismic reflection survey for geometrical arrangement between pits, the scattering stacking method with stacking velocity analysis is compared with the CDP (common depth point horizontal stacking method). The advantages of the CDP supposedly include the following. Since it presumes an average velocity field, it can determine velocities having stacking effects. The method presumes stratification and, since such enables the division of huge quantities of observed data into smaller groups, more data can be calculated in a shorter time period. The method has disadvantages, attributable to its presuming an average velocity field, that accuracy in processing is lower when the velocity field contrast is higher, that accuracy in processing is low unless stratification is employed, and that velocities obtained from stacking velocity analysis are affected by dipped structures. Such shortcomings may be remedied in the scattering stacking method with stacking velocity analysis. Possibilities are that, as far as the horizontal reflection plane is concerned, it may yield stack records higher in S/N ratio than the CDP. Findings relative to dipped reflection planes will be introduced at the presentation. 6 refs., 12 figs.

  18. Development and characterisation of a portable direct methanol fuel cell stack

    Energy Technology Data Exchange (ETDEWEB)

    Oedegaard, A.

    2005-11-21

    This thesis deals with the development and characterisation of a portable direct methanol fuel cell stack. In addition, calculations of the transport of methanol and water in the membrane are compared with experimentally determined values. It also includes investigations of the behaviour of single-cells and some of its components, as the anode gas diffusion layer and the anode flow-field. For the addition of methanol to the anode feed loop, a passive concept based on a permeable tube was developed and verified by both experiments and simulations. (orig.)

  19. Tandem-type organic solar cells by stacking different heterojunction materials

    International Nuclear Information System (INIS)

    Triyana, Kuwat; Yasuda, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo

    2005-01-01

    Three layers of phthalocyanine/perylene heterojunction (HJ) components were stacked and sandwiched by an indium tin oxide (ITO) and a top metal electrode, which is denoted by a triple-HJ organic solar cell. The organic material in the middle-HJ component second from the ITO was varied to investigate the photovoltaic properties. The power conversion efficiency (PCE) was improved by the more balanced photo-generated carrier by use of the appropriate material for the second-HJ component. The optimized device showed higher PCE (1.38%) than the reference device (0.98%)

  20. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  1. Heteroepitaxial growth of basal plane stacking fault free a-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Wieneke, Matthias; Hempel, Thomas; Noltemeyer, Martin; Witte, Hartmut; Dadgar, Armin; Blaesing, Juergen; Christen, Juergen; Krost, Alois [Otto-von-Guericke Universitaet Magdeburg, FNW/IEP, Magdeburg (Germany)

    2010-07-01

    Growth of light emitting quantum-wells based on a-plane GaN is a possibility to reduce or even to avoid polarization correlated luminescence red shift and reduction of radiative recombination efficiency. But until now heteroepitaxially grown a-plane GaN films are characterized by a poor crystalline quality expressed by a high density of basal plane stacking faults (BSF) and partial dislocations. We present Si doped a-plane GaN films grown on r-plane sapphire substrates by metal organic vapor phase epitaxy using high temperature AlGaN nucleation layers. FE-SEM images revealed three dimensionally grown GaN crystallites sized up to tenth micrometer in the basal plane and a few tenth micrometers along the c-axes. Though, the full width at half maxima of the X-ray diffraction {omega}-scans of the in-plane GaN(1 anti 100) and GaN(0002) Bragg reflections exhibited a very high crystal quality. Furthermore, luminescence spectra were dominated by near band gap emission, while there was no separated peak of the basal plane stacking fault. In summary we present heteroepitaxially grown a-plane GaN without an evidence of basal plane stacking faults in X-ray diffraction measurements and luminescence spectra.

  2. DESIGN OF MULTILAYER APERTURE COUPLED STACKED MICROSTRIP PATCH ANTENNA FOR WLAN APPLICATIONS

    Directory of Open Access Journals (Sweden)

    P. Jothilakshmi

    2015-10-01

    Full Text Available One of the major drawbacks of microstrip patch antenna is its narrow bandwidth. The solution of this problem is to use aperture coupled stacked micro strip patch antenna. The antenna uses a combination of aperture coupled feeding technique and multi- layer radiating patch in order for the radiating elements are increase the gain bandwidth. The ‘I’ and ‘H’ shaped aperture slots are etched onto the ground plane. It is used to transfer the energy from feed line to stacked patch. A variation of the feed line length controls the selected aperture slots to be active. The waves from the selected activated aperture slots will radiate to particular radiating patch and achieve the desired resonant frequency. The air gap is used to avoid coupling loss between the aperture slots and stacked patches. The observed simulated and measured results show that the proposed antenna structure resonated at 2.51 GHz frequency with reduced return loss and optimum voltage standing wave ratio.

  3. Validating and improving a zero-dimensional stack voltage model of the Vanadium Redox Flow Battery

    Science.gov (United States)

    König, S.; Suriyah, M. R.; Leibfried, T.

    2018-02-01

    Simple, computationally efficient battery models can contribute significantly to the development of flow batteries. However, validation studies for these models on an industrial-scale stack level are rarely published. We first extensively present a simple stack voltage model for the Vanadium Redox Flow Battery. For modeling the concentration overpotential, we derive mass transfer coefficients from experimental results presented in the 1990s. The calculated mass transfer coefficient of the positive half-cell is 63% larger than of the negative half-cell, which is not considered in models published to date. Further, we advance the concentration overpotential model by introducing an apparent electrochemically active electrode surface which differs from the geometric electrode area. We use the apparent surface as fitting parameter for adapting the model to experimental results of a flow battery manufacturer. For adapting the model, we propose a method for determining the agreement between model and reality quantitatively. To protect the manufacturer's intellectual property, we introduce a normalization method for presenting the results. For the studied stack, the apparent electrochemically active surface of the electrode is 41% larger than its geometrical area. Hence, the current density in the diffusion layer is 29% smaller than previously reported for a zero-dimensional model.

  4. Long Duration Balloon Charge Controller Stack Integration

    Science.gov (United States)

    Clifford, Kyle

    NASA and the Columbia Scientific Balloon Facility are interested in updating the design of the charge controller on their long duration balloon (LDB) in order to enable the charge controllers to be directly interfaced via RS232 serial communication by a ground testing computers and the balloon's flight computer without the need to have an external electronics stack. The design involves creating a board that will interface with the existing boards in the charge controller in order to receive telemetry from and send commands to those boards, and interface with a computer through serial communication. The inputs to the board are digital status inputs indicating things like whether the photovoltaic panels are connected or disconnected; and analog inputs with information such as the battery voltage and temperature. The outputs of the board are 100ms duration command pulses that will switch relays that do things like connect the photovoltaic panels. The main component of this design is a PIC microcontroller which translates the outputs of the existing charge controller into serial data when interrogated by a ground testing or flight computer. Other components involved in the design are an AD7888 12-bit analog to digital converter, a MAX3232 serial transceiver, various other ICs, capacitors, resistors, and connectors.

  5. Black Hole Spectroscopy with Coherent Mode Stacking.

    Science.gov (United States)

    Yang, Huan; Yagi, Kent; Blackman, Jonathan; Lehner, Luis; Paschalidis, Vasileios; Pretorius, Frans; Yunes, Nicolás

    2017-04-21

    The measurement of multiple ringdown modes in gravitational waves from binary black hole mergers will allow for testing the fundamental properties of black holes in general relativity and to constrain modified theories of gravity. To enhance the ability of Advanced LIGO/Virgo to perform such tasks, we propose a coherent mode stacking method to search for a chosen target mode within a collection of multiple merger events. We first rescale each signal so that the target mode in each of them has the same frequency and then sum the waveforms constructively. A crucial element to realize this coherent superposition is to make use of a priori information extracted from the inspiral-merger phase of each event. To illustrate the method, we perform a study with simulated events targeting the ℓ=m=3 ringdown mode of the remnant black holes. We show that this method can significantly boost the signal-to-noise ratio of the collective target mode compared to that of the single loudest event. Using current estimates of merger rates, we show that it is likely that advanced-era detectors can measure this collective ringdown mode with one year of coincident data gathered at design sensitivity.

  6. ATLAS software stack on ARM64

    CERN Document Server

    Smith, Joshua Wyatt; The ATLAS collaboration

    2016-01-01

    The ATLAS experiment explores new hardware and software platforms that, in the future, may be more suited to its data intensive workloads. One such alternative hardware platform is the ARM architecture, which is designed to be extremely power efficient and is found in most smartphones and tablets. CERN openlab recently installed a small cluster of ARM 64-bit evaluation prototype servers. Each server is based on a single-socket ARM 64-bit system on a chip, with 32 Cortex-A57 cores. In total, each server has 128 GB RAM connected with four fast memory channels. This paper reports on the port of the ATLAS software stack onto these new prototype ARM64 servers. This included building the "external" packages that the ATLAS software relies on. Patches were needed to introduce this new architecture into the build as well as patches that correct for platform specific code that caused failures on non-x86 architectures. These patches were applied such that porting to further platforms will need no or only very little adj...

  7. Testing system for a fuel cells stack

    International Nuclear Information System (INIS)

    Culcer, Mihai; Iliescu, Mariana; Stefanescu, Ioan; Raceanu, Mircea; Enache, Adrian; Lazar, Roxana Elena

    2006-01-01

    Hydrogen and electricity together represent one of the most promising ways to realize sustainable energy, whilst fuel cells provide the most efficient conversion devices for converting hydrogen and possibly other fuels into electricity. Thus, the development of fuel cell technology is currently being actively pursued worldwide. Due to its simple operation and other fair characteristics, the Proton Exchange Membrane Fuel Cell (PEMFC) is especially suitable as a replacement for the internal combustion engine. The PEMFC is also being developed for decentralized electricity and heat generation in buildings and mobile applications. Starting with 2001 the Institute of Research - Development for Cryogenics and Isotopic Technologies - ICIT - Rm. Valcea developed research activities supported by the Romanian Ministry of Education and Research within the National Research Program in order to bridge the gap to European competencies in the area of hydrogen and fuel cells. The paper deals with the testing system designed and developed in ICIT Rm. Valcea as a flexible and versatile tool allowing a large scale of parameter settings and measurements on a single cell or on a fuel cells stack onto a wind range of output power values. (authors)

  8. Weyl magnons in noncoplanar stacked kagome antiferromagnets

    Science.gov (United States)

    Owerre, S. A.

    2018-03-01

    Weyl nodes have been experimentally realized in photonic, electronic, and phononic crystals. However, magnonic Weyl nodes are yet to be seen experimentally. In this paper, we propose Weyl magnon nodes in noncoplanar stacked frustrated kagome antiferromagnets, naturally available in various real materials. Most crucially, the Weyl nodes in the current system occur at the lowest excitation and possess a topological thermal Hall effect, therefore they are experimentally accessible at low temperatures due to the population effect of bosonic quasiparticles. In stark contrast to other magnetic systems, the current Weyl nodes do not rely on time-reversal symmetry breaking by the magnetic order. Rather, they result from explicit macroscopically broken time reversal symmetry by the scalar spin chirality of noncoplanar spin textures and can be generalized to chiral spin liquid states. Moreover, the scalar spin chirality gives a real space Berry curvature which is not available in previously studied magnetic Weyl systems. We show the existence of magnon arc surface states connecting projected Weyl magnon nodes on the surface Brillouin zone. We also uncover the first realization of triply-degenerate nodal magnon point in the noncollinear regime with zero scalar spin chirality.

  9. Lithiation-induced shuffling of atomic stacks

    KAUST Repository

    Nie, Anmin

    2014-09-10

    In rechargeable lithium-ion batteries, understanding the atomic-scale mechanism of Li-induced structural evolution occurring at the host electrode materials provides essential knowledge for design of new high performance electrodes. Here, we report a new crystalline-crystalline phase transition mechanism in single-crystal Zn-Sb intermetallic nanowires upon lithiation. Using in situ transmission electron microscopy, we observed that stacks of atomic planes in an intermediate hexagonal (h-)LiZnSb phase are "shuffled" to accommodate the geometrical confinement stress arising from lamellar nanodomains intercalated by lithium ions. Such atomic rearrangement arises from the anisotropic lithium diffusion and is accompanied by appearance of partial dislocations. This transient structure mediates further phase transition from h-LiZnSb to cubic (c-)Li2ZnSb, which is associated with a nearly "zero-strain" coherent interface viewed along the [001]h/[111]c directions. This study provides new mechanistic insights into complex electrochemically driven crystalline-crystalline phase transitions in lithium-ion battery electrodes and represents a noble example of atomic-level structural and interfacial rearrangements.

  10. Captioning Transformer with Stacked Attention Modules

    Directory of Open Access Journals (Sweden)

    Xinxin Zhu

    2018-05-01

    Full Text Available Image captioning is a challenging task. Meanwhile, it is important for the machine to understand the meaning of an image better. In recent years, the image captioning usually use the long-short-term-memory (LSTM as the decoder to generate the sentence, and these models show excellent performance. Although the LSTM can memorize dependencies, the LSTM structure has complicated and inherently sequential across time problems. To address these issues, recent works have shown benefits of the Transformer for machine translation. Inspired by their success, we develop a Captioning Transformer (CT model with stacked attention modules. We attempt to introduce the Transformer to the image captioning task. The CT model contains only attention modules without the dependencies of the time. It not only can memorize dependencies between the sequence but also can be trained in parallel. Moreover, we propose the multi-level supervision to make the Transformer achieve better performance. Extensive experiments are carried out on the challenging MSCOCO dataset and the proposed Captioning Transformer achieves competitive performance compared with some state-of-the-art methods.

  11. A Piezoelectric PZT Ceramic Mulitlayer Stack for Energy Harvesting Under Dynamic Forces

    Science.gov (United States)

    Xu, Tian-Bing; Siochi, Emilie J.; Kang, Jin Ho; Zuo, Lei; Zhou, Wanlu; Tang, Xiudong; Jiang, Xiaoning

    2011-01-01

    Piezoelectric energy harvesting transducers (PEHTs) are commonly used in motion/vibration energy scavenging devices. To date, most researchers have focused on energy harvesting at narrow bandwidths around the mechanical resonance frequency, and most piezoelectric harvesting devices reported in the literature have very low effective piezoelectric coefficient (d(sub eff)) (PZT ceramic multilayer stack (PZT-Stack) with high effective piezoelectric coefficient for high-performance PEHTs. The PZT-Stack is composed of 300 layers of 0.1 mm thick PZT plates, with overall dimensions of 32.4 mm X 7.0 mm X 7.0 mm. Experiments were carried out with dynamic forces in a broad bandwidth ranging from 0.5 Hz to 25 kHz. The measured results show that the effective piezoelectric coefficient of the PZT-stack is about 1 X 10(exp 5) pC/N at off-resonance frequencies and 1.39 X 10(exp 6) pC/N at resonance, which is order of magnitude larger than that of traditional PEHTs. The effective piezoelectric coefficients (d(sub eff)) do not change significantly with applied dynamic forces having root mean square (RMS) values ranging from 1 N to 40 N. In resonance mode, 231 mW of electrical power was harvested at 2479 Hz with a dynamic force of 11.6 N(sub rms), and 7.6 mW of electrical power was generated at a frequency of 2114 Hz with 1 N(sub rms) dynamic force. In off-resonance mode, an electrical power of 18.7 mW was obtained at 680 Hz with a 40 N(sub rms) dynamic force. A theoretical model of energy harvesting for the PZT-Stack is established. The modeled results matched well with experimental measurements. This study demonstrated that high effective piezoelectric coefficient structures enable PEHTs to harvest more electrical energy from mechanical vibrations or motions, suggesting an effective design for high-performance low-footprint PEHTs with potential applications in military, aerospace, and portable electronics. In addition, this study provides a route for using piezoelectric multilayer

  12. A Piezoelectric PZT Ceramic Mulitlayer Stack for Energy Harvesting Under Dynamic Forces

    Science.gov (United States)

    Xu, Tian-Bing; Siochi, Emilie J.; Kang, Jin Ho; Zuo, Lei; Zhou, Wanlu; Tang, Xiudong; Jiang, Xiaoning

    2011-01-01

    Piezoelectric energy harvesting transducers (PEHTs) are commonly used in motion/vibration energy scavenging devices. To date, most researchers have focused on energy harvesting at narrow bandwidths around the mechanical resonance frequency, and most piezoelectric harvesting devices reported in the literature have very low effective piezoelectric coefficient (d(sub eff)) (coefficients of about 100 pC/N. The level of harvested electrical power for CBPEHTs is on the order of microW even at resonance mode. In order to harvest more electrical energy across broader bandwidth, high effective piezoelectric coefficient structures are needed. In this study, we investigate a "33" longitudinal mode, piezoelectric PZT ceramic multilayer stack (PZT-Stack) with high effective piezoelectric coefficient for high-performance PEHTs. The PZT-Stack is composed of 300 layers of 0.1 mm thick PZT plates, with overall dimensions of 32.4 mm X 7.0 mm X 7.0 mm. Experiments were carried out with dynamic forces in a broad bandwidth ranging from 0.5 Hz to 25 kHz. The measured results show that the effective piezoelectric coefficient of the PZT-stack is about 1 X 10(exp 5) pC/N at off-resonance frequencies and 1.39 X 10(exp 6) pC/N at resonance, which is order of magnitude larger than that of traditional PEHTs. The effective piezoelectric coefficients (d(sub eff)) do not change significantly with applied dynamic forces having root mean square (RMS) values ranging from 1 N to 40 N. In resonance mode, 231 mW of electrical power was harvested at 2479 Hz with a dynamic force of 11.6 N(sub rms), and 7.6 mW of electrical power was generated at a frequency of 2114 Hz with 1 N(sub rms) dynamic force. In off-resonance mode, an electrical power of 18.7 mW was obtained at 680 Hz with a 40 N(sub rms) dynamic force. A theoretical model of energy harvesting for the PZT-Stack is established. The modeled results matched well with experimental measurements. This study demonstrated that high effective

  13. Efficiency of Polymer Electrolyte Membrane Fuel Cell Stack

    Directory of Open Access Journals (Sweden)

    Hans Bosma

    2011-08-01

    Full Text Available This paper applies a feedforward control of optimal oxygen excess ratio that maximize net power (improve efficiency of a NedStack P8.0-64 PEM fuel cell stack (FCS system. Net powers profile as a function of oxygen excess ratio for some points of operation are analyzed by using FCS model. The relationships between stack current and the corresponding control input voltage that gives an optimal oxygen excess ratio are used to design a feedforward control scheme. The results of this scheme are compared to the results of a feedforward control using a constant oxygen excess ratio. Simulation results show that optimal oxygen excess ratio improves fuel cell performance compared to the results of constant oxygen excess ratio. The same procedures are performed experimentally for the FCS system. The behaviour of the net power of the fuel cell stack with respect to the variation of oxygen excess ratio is analyzed to obtain optimal values. Data of stack current and the corresponding voltage input to the compressor that gives optimal values of oxygen excess ratio are used to develop a feedforward control. Feedforward control based on constant and optimal oxygen excess ratio control, are implemented in the NedStack P8.0-64 PEM fuel cell stack system by using LabVIEW. Implementation results shows that optimal oxygen excess ratio control improves the fuel cell performance compared to the constant oxygen excess ratio control.

  14. Through-Silicon-Via Underfill Dispensing for 3D Die/Interposer Stacking

    Science.gov (United States)

    Le, Fuliang

    direction because this aligned configuration has the lowest risk to form an edge flood. In order to find a trade-off between short filling time and low risk of an edge flood, an optimized TSV pattern, including central/outer TSVs, is proposed for the underfill of a 3D chip stack. The central TSVs are set for a constant inflow to obtain a fast filling effect. The outer TSVs are set for free droplets to eliminate the potential edge flood during underfilling the area around the chip edges. The test vehicle for the underfill test is a four-layer die/interposer stack. In each layer, two flip chips are mounted beneath an interposer. The vertical-aligned configuration and the optimized TSV pattern are used in the test vehicle. In the underfill dispensing process, I-Pass edge dispensing is still used to fill the gaps beneath the bottom two layers. Afterwards, a constant inflow is dispensed into the central TSVs until the underfill flow reaches the chip edges. The remaining unfilled area is completed by dispensing free droplets into the outer TSVs. The underfill effect is inspected by acoustic scanning and cross-sections. Inspection results show that the underfill is completed without voids and the solder joints are well covered by an encapsulant. In addition, compared with other prevailing underfill methods, the fillet occupies less space on a substrate, leading to a rise in silicon packaging density.

  15. Reliability analysis and initial requirements for FC systems and stacks

    Science.gov (United States)

    Åström, K.; Fontell, E.; Virtanen, S.

    In the year 2000 Wärtsilä Corporation started an R&D program to develop SOFC systems for CHP applications. The program aims to bring to the market highly efficient, clean and cost competitive fuel cell systems with rated power output in the range of 50-250 kW for distributed generation and marine applications. In the program Wärtsilä focuses on system integration and development. System reliability and availability are key issues determining the competitiveness of the SOFC technology. In Wärtsilä, methods have been implemented for analysing the system in respect to reliability and safety as well as for defining reliability requirements for system components. A fault tree representation is used as the basis for reliability prediction analysis. A dynamic simulation technique has been developed to allow for non-static properties in the fault tree logic modelling. Special emphasis has been placed on reliability analysis of the fuel cell stacks in the system. A method for assessing reliability and critical failure predictability requirements for fuel cell stacks in a system consisting of several stacks has been developed. The method is based on a qualitative model of the stack configuration where each stack can be in a functional, partially failed or critically failed state, each of the states having different failure rates and effects on the system behaviour. The main purpose of the method is to understand the effect of stack reliability, critical failure predictability and operating strategy on the system reliability and availability. An example configuration, consisting of 5 × 5 stacks (series of 5 sets of 5 parallel stacks) is analysed in respect to stack reliability requirements as a function of predictability of critical failures and Weibull shape factor of failure rate distributions.

  16. Size filtering effect in vertical stacks of In(Ga)As/GaAs self-assembled quantum rings

    International Nuclear Information System (INIS)

    Ouerghui, W.; Melliti, A.; Maaref, M.A.; Martinez-Pastor, J.; Gomis, J.; Granados, D.; Garcia, J.M.

    2006-01-01

    We present a systematic study of closely In(Ga)As/InAs quantum rings (QRs) grown by molecular beam epitaxy (MBE). Photoluminescence (PL) experiments show a strong filtering effect in the ring being stacked and simultaneous linewidth narrowing for the appropriate layer thickness (thinner thickness). If the spacer thickness is further reduced, a strong coupling between the nanostructures is produced and the signal shifts to low energy

  17. L1{sub 0} stacked binaries as candidates for hard-magnets. FePt, MnAl and MnGa

    Energy Technology Data Exchange (ETDEWEB)

    Matsushita, Yu-ichiro [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Applied Physics, The University of Tokyo (Japan); Madjarova, Galia [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physical Chemistry, Faculty of Chemistry and Pharmacy, Sofia University (Bulgaria); Flores-Livas, Jose A. [Department of Physics, Universitaet Basel (Switzerland); Dewhurst, J.K.; Gross, E.K.U. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Felser, C. [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Sharma, S. [Max-Planck Institut fuer Microstrukture Physics, Halle (Germany); Department of Physics, Indian Institute of Technology, Roorkee, Uttarkhand (India)

    2017-08-15

    We present a novel approach for designing new hard magnets by forming stacks of existing binary magnets to enhance the magneto crystalline anisotropy. This is followed by an attempt at reducing the amount of expensive metal in these stacks by replacing it with cheaper metal with similar ionic radius. This strategy is explored using examples of FePt, MnAl and MnGa. In this study a few promising materials are suggested as good candidates for hard magnets: stacked binary FePt{sub 2}MnGa{sub 2} in structure where each magnetic layer is separated by two non-magnetic layers, FePtMnGa and FePtMnAl in hexagonally distorted Heusler structures and FePt{sub 0.5}Ti{sub 0.5}MnAl. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Mixed Mechanism of Lubrication by Lipid Bilayer Stacks.

    Science.gov (United States)

    Boţan, Alexandru; Joly, Laurent; Fillot, Nicolas; Loison, Claire

    2015-11-10

    Although the key role of lipid bilayer stacks in biological lubrication is generally accepted, the mechanisms underlying their extreme efficiency remain elusive. In this article, we report molecular dynamics simulations of lipid bilayer stacks undergoing load and shear. When the hydration level is reduced, the velocity accommodation mechanism changes from viscous shear in hydration water to interlayer sliding in the bilayers. This enables stacks of hydrated lipid bilayers to act as efficient boundary lubricants for various hydration conditions, structures, and mechanical loads. We also propose an estimation for the friction coefficient; thanks to the strong hydration forces between lipid bilayers, the high local viscosity is not in contradiction with low friction coefficients.

  19. Study and Development of an OpenStack solution

    OpenAIRE

    Jorba Brosa, Maria

    2014-01-01

    Estudi i desenvolupament d'una solució de virtualització amb Openstack. Es farà un especial èmfasi en la part de seguretat. Deployment of a solution based in OpenStack for the creation of an Infrastructure service cloud. Implementación de una solución basada en OpenStack para la creación de una infrastructura de servicios cloud. Implementació d'una solució basada en OpenStack per la creació d'una infrastructura de serveis cloud.

  20. Loop Entropy Assists Tertiary Order: Loopy Stabilization of Stacking Motifs

    Directory of Open Access Journals (Sweden)

    Daniel P. Aalberts

    2011-11-01

    Full Text Available The free energy of an RNA fold is a combination of favorable base pairing and stacking interactions competing with entropic costs of forming loops. Here we show how loop entropy, surprisingly, can promote tertiary order. A general formula for the free energy of forming multibranch and other RNA loops is derived with a polymer-physics based theory. We also derive a formula for the free energy of coaxial stacking in the context of a loop. Simulations support the analytic formulas. The effects of stacking of unpaired bases are also studied with simulations.

  1. Static analysis of worst-case stack cache behavior

    DEFF Research Database (Denmark)

    Jordan, Alexander; Brandner, Florian; Schoeberl, Martin

    2013-01-01

    Utilizing a stack cache in a real-time system can aid predictability by avoiding interference that heap memory traffic causes on the data cache. While loads and stores are guaranteed cache hits, explicit operations are responsible for managing the stack cache. The behavior of these operations can......-graph, the worst-case bounds can be efficiently yet precisely determined. Our evaluation using the MiBench benchmark suite shows that only 37% and 21% of potential stack cache operations actually store to and load from memory, respectively. Analysis times are modest, on average running between 0.46s and 1.30s per...

  2. Fuel flow distribution in SOFC stacks revealed by impedance spectroscopy

    DEFF Research Database (Denmark)

    Mosbæk, Rasmus Rode; Hjelm, Johan; Barfod, Rasmus

    2014-01-01

    As SOFC technology is moving closer to a commercial break through, methods to measure the “state-of-health” of operating stacks are becoming of increasing interest. This requires application of advanced methods for detailed electrical and electrochemical characterization during operation. An oper......As SOFC technology is moving closer to a commercial break through, methods to measure the “state-of-health” of operating stacks are becoming of increasing interest. This requires application of advanced methods for detailed electrical and electrochemical characterization during operation...... utilizations. The fuel flow distribution provides important information about the operating limits of the stack when high electrical efficiency is required....

  3. Stacking by electroinjection with discontinuous buffers in capillary zone electrophoresis.

    Science.gov (United States)

    Shihabi, Zak K

    2002-08-01

    The work presented here demonstrates that electroinjection can be performed using discontinuous buffers, which can result in better stacking than that obtained by hydrodynamic injection. The sample can be concentrated at the tip of the capillary leaving practically the whole capillary for sample separation. This results in several advantages, such as better sample concentration, higher plate number and shorter time of stacking. However, sample introduction by electromigration is suited for samples free or low in salt content. Samples, which are high in salt content, are better introduced by the hydrodynamic injection for stacking by the discontinuous buffers. Different simple methods to introduce the discontinuity in the buffer for electroinjection are discussed.

  4. Production and Reliability Oriented SOFC Cell and Stack Design

    DEFF Research Database (Denmark)

    Hauth, Martin; Lawlor, Vincent; Cartellieri, Peter

    2017-01-01

    The paper presents an innovative development methodology for a production and reliability oriented SOFC cell and stack design aiming at improving the stacks robustness, manufacturability, efficiency and cost. Multi-physics models allowed a probabilistic approach to consider statistical variations...... in production, material and operating parameters for the optimization phase. A methodology for 3D description of spatial distribution of material properties based on a random field models was developed and validated by experiments. Homogenized material models on multiple levels of the SOFC stack were...... and output parameters and to perform a sensitivity analysis were developed and implemented. The capabilities of the methodology is illustrated on two practical cases....

  5. Calculation of AC losses in large HTS stacks and coils

    DEFF Research Database (Denmark)

    Zermeno, Victor; Abrahamsen, Asger Bech; Mijatovic, Nenad

    2012-01-01

    In this work, we present a homogenization method to model a stack of HTS tapes under AC applied transport current or magnetic field. The idea is to find an anisotropic bulk equivalent for the stack of tapes, where the internal alternating structures of insulating, metallic, superconducting...... allowing for overcritical current densities to be considered. The method presented here allowed for a computational speedup factor of up to 2 orders of magnitude when compared to full 2-D simulations taking into account the actual structure of the stacks without compromising accuracy....

  6. Optimized stacked RADFETs for milli-rad dose measurement

    International Nuclear Information System (INIS)

    O'Connell, B.; Lane, B.; Mohammadzadeh, A.

    1999-01-01

    This paper details the improvements in the design of stacked RADFETs for increased radiation sensitivity. The issues of high read-out voltage has been shown to be a draw-back. It is the body (bulk)effect factor that is responsible for the increased overall stack Threshold voltage (V T ), which is greater than the sum of the individual devices V T . From extensive process and device simulation and resultant circuit simulation, modified stack structures have been proposed and designed. New and exciting result of lower initial (pre-irradiation) output voltage as well as increased radiation sensitivity will be presented. (author)

  7. Cover layer technology and a new hard coat for cartridge-free Blu-ray disc

    Science.gov (United States)

    Kang, Tae-Sik; Han, Mi Young; Lee, Seong-Keun; Jang, Sung Hoon; Hong, Young Jun; Seo, Hun; Lee, Chang-Ho

    2004-09-01

    Spin coating method for cover layer of Blu-ray Disc (BD) has been studied and a new hard coat resin including antifouling property has been developed. A vacuum chuck was newly designed to minimize the ski-jump effect. 3 mm hard coat layer was stacked onto the 97 mm cover layer by spin coating method.

  8. Transparent contacts for stacked compound photovoltaic cells

    Science.gov (United States)

    Tauke-Pedretti, Anna; Cederberg, Jeffrey; Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis

    2016-11-29

    A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.

  9. Security Issues in the Android Cross-Layer Architecture

    OpenAIRE

    Armando, Alessandro; Merlo, Alessio; Verderame, Luca

    2012-01-01

    The security of Android has been recently challenged by the discovery of a number of vulnerabilities involving different layers of the Android stack. We argue that such vulnerabilities are largely related to the interplay among layers composing the Android stack. Thus, we also argue that such interplay has been underestimated from a security point-of-view and a systematic analysis of the Android interplay has not been carried out yet. To this aim, in this paper we provide a simple model of th...

  10. Fast principal component analysis for stacking seismic data

    Science.gov (United States)

    Wu, Juan; Bai, Min

    2018-04-01

    Stacking seismic data plays an indispensable role in many steps of the seismic data processing and imaging workflow. Optimal stacking of seismic data can help mitigate seismic noise and enhance the principal components to a great extent. Traditional average-based seismic stacking methods cannot obtain optimal performance when the ambient noise is extremely strong. We propose a principal component analysis (PCA) algorithm for stacking seismic data without being sensitive to noise level. Considering the computational bottleneck of the classic PCA algorithm in processing massive seismic data, we propose an efficient PCA algorithm to make the proposed method readily applicable for industrial applications. Two numerically designed examples and one real seismic data are used to demonstrate the performance of the presented method.

  11. Sample Stacking in capillary zone electrophoresis : Principles, advantages and limitations

    NARCIS (Netherlands)

    Beckers, J.L.; Bocek, P.

    2000-01-01

    The principles of stacking procedures are described and their properties are discussed, including the fundamentals of the behavior of zone boundaries and the consequences of the self-correcting properties of boundaries in moving boundary electrophoresis, isotachophoresis, and zone electrophoresis.

  12. DBaaS with OpenStack Trove

    CERN Document Server

    Giardini, Andrea

    2013-01-01

    The purpose of the project was to evaluate the Trove component for OpenStack, understand if it can be used with the CERN infrastructure and report the benefits and disadvantages of this software. Currently, databases for CERN projects are provided by a DbaaS software developed inside the IT-DB group. This solution works well with the actual infrastructure but it is not easy to maintain. With the migration of the CERN infrastructure to OpenStack the Database group started to evaluate the Trove component. Instead of mantaining an own DbaaS service it can be interesting to migrate everything to OpenStack and replace the actual DbaaS software with Trove. This way both virtual machines and databases will be managed by OpenStack itself.

  13. Simulation of magnetization and levitation characteristics of HTS tape stacks

    Science.gov (United States)

    Anischenko, I. V.; Pokrovskii, S. V.; Mineev, N. A.

    2017-12-01

    In this work it is presented a computational model of a magnetic levitation system based on stacks of high-temperature second generation superconducting tapes (HTS) GdBa2Cu3O7-x. Calculated magnetic field and the current distributions in the system for different stacks geometries in the zero-field cooling mode are also presented. The magnetization curves of the stacks in the external field of a permanent NdFeB magnet and the levitation force dependence on the gap between the magnet and the HTS tapes stack were obtained. A model of the magnetic system, oriented to levitation application, is given. Results of modeling were compared with the experimental data.

  14. Sport stacking activities in school children's motor skill development.

    Science.gov (United States)

    Li, Yuhua; Coleman, Diane; Ransdell, Mary; Coleman, Lyndsie; Irwin, Carol

    2011-10-01

    This study examined the impact of a 12-wk. sport stacking intervention on reaction time (RT), manual dexterity, and hand-eye coordination in elementary school-aged children. 80 Grade 2 students participated in a 15-min. sport stacking practice session every school day for 12 wk., and were tested on psychomotor performance improvement. Tests for choice RT, manual dexterity, and photoelectric rotary pursuit tracking were conducted pre- and post-intervention for both experimental group (n = 36) and the controls (n = 44) who did no sport stacking. Students who had the intervention showed a greater improvement in two-choice RT. No other group difference was found. Such sport stacking activities may facilitate children's central processing and perceptual-motor integration.

  15. Stacking faults and microstructural parameters in non-mulberry silk ...

    Indian Academy of Sciences (India)

    rameters like crystal size (〈N〉), lattice strain (g) and stacking faults in polymer materials ... metal oxide compounds, but may be inadequate for describing diffraction patterns .... Further, with these model parameters for individual Bragg reflec-.

  16. Study of tapping process of carbon fiber reinforced plastic composites/AA7075 stacks

    Science.gov (United States)

    D'Orazio, Alessio; Mehtedi, Mohamad El; Forcellese, Archimede; Nardinocchi, Alessia; Simoncini, Michela

    2018-05-01

    The present investigation aims at studying the tapping process of a three-layer stack constituted by two CFRP layers and a core plate in AA7075 aluminum alloy. The CFRP laminates were obtained by a pre-impregnated woven sample made up of T700 carbon fibers and a thermoset epoxy matrix. Tapping experiments were performed on a 5-axis machining center instrumented with a dynamometer to measure thrust force generated during process. A high-speed steel tool, coated with nanocomposite TiAlN, was used. According to the tool manufacturer recommendations, rotational speed and feed rate were 800 rpm and 1000 mm/min, respectively. Similar thrust force time history responses were obtained by tapping different holes, even though the vertical force increases with number of threaded holes. Furthermore, a quantitative evaluation of delamination at the periphery of entry holes was carried out. The delamination at the entry hole strongly increases with number of threaded holes.

  17. Enhancement of mechanical and electrical properties of continuous-fiber-reinforced epoxy composites with stacked graphene.

    Science.gov (United States)

    Naveh, Naum; Shepelev, Olga; Kenig, Samuel

    2017-01-01

    Impregnation of expandable graphite (EG) after thermal treatment with an epoxy resin containing surface-active agents (SAAs) enhanced the intercalation of epoxy monomer between EG layers and led to further exfoliation of the graphite, resulting in stacks of few graphene layers, so-called "stacked" graphene (SG). This process enabled electrical conductivity of cured epoxy/SG composites at lower percolation thresholds, and improved thermo-mechanical properties were measured with either Kevlar, carbon or glass-fiber-reinforced composites. Several compositions with SAA-modified SG led to higher dynamic moduli especially at high temperatures, reflecting the better wetting ability of the modified nanoparticles. The hydrophilic/hydrophobic nature of the SAA dictates the surface energy balance. More hydrophilic SAAs promoted localization of the SG at the Kevlar/epoxy interface, and morphology seems to be driven by thermodynamics, rather than the kinetic effect of viscosity. This effect was less obvious with carbon or glass fibers, due to the lower surface energy of the carbon fibers or some incompatibility with the glass-fiber sizing. Proper choice of the surfactant and fine-tuning of the crosslink density at the interphase may provide further enhancements in thermo-mechanical behavior.

  18. Stacking faults on (001) in transition-metal disilicides with the C11b structure

    International Nuclear Information System (INIS)

    Ito, K.; Nakamoto, T.; Inui, H.; Yamaguchi, M.

    1997-01-01

    Stacking faults on (001) in MoSi 2 and WSi 2 with the C11 b structure have been characterized by transmission electron microscopy (TEM), using their single crystals grown by the floating-zone method. Although WSi 2 contains a high density of stacking faults, only several faults are observed in MoSi 2 . For both crystals, (001) faults are characterized to be of the Frank-type in which two successive (001) Si layers are removed from the lattice, giving rise to a displacement vector parallel to [001]. When the displacement vector of faults is expressed in the form of R = 1/n[001], however, their n values are slightly deviated from the exact value of 3, because of dilatation of the lattice in the direction perpendicular to the fault, which is caused by the repulsive interaction between Mo (W) layers above and below the fault. Matching of experimental high-resolution TEM images with calculated ones indicates n values to be 3.12 ± 0.10 and 3.34 ± 0.10 for MoSi 2 and WSi 2 , respectively

  19. Optical and structural characterization of self-organized stacked GaN/AlN quantum dots

    International Nuclear Information System (INIS)

    Salviati, G; Rossi, F; Armani, N; Grillo, V; Martinez, O; Vinattieri, A; Damilano, B; Matsuse, A; Grandjean, N

    2004-01-01

    Self-organized GaN/AlN stacked quantum dots (QDs) have been studied by means of cathodoluminescence (CL), near field scanning optical microscopy (NSOM), photoluminescence, μ-Raman, and transmission electron microscopy. Assignment of the optical emissions was made on the basis of the structural parameters, power-dependent optical studies and depth-resolved CL. Power-dependent studies allowed us to distinguish between quantum confined and buffer emissions. On increasing the power injection conditions, a QD-size-dependent blue shift due to the screening of the internal electric fields was found together with a trend to saturation observed in the high injection limit. The possible evidence of excited states has also been shown by power-dependent photoluminescence and CL. Different blue shifts in specimens with different numbers of stacked layers suggested possible different residual strain values as confirmed by μ-Raman studies. Depth-resolved CL investigations performed at constant power injection per unit volume allowed us to distinguish between QD layers with different nominal GaN coverages and a linear dependence of peak energy versus GaN monolayer number has also been found. Adding 1 ML of GaN resulted in an average shift of about 150 meV. The existence of QDs with different size distributions along the growth axis was also found. The observations were confirmed by NSOM spectroscopy

  20. Heuristic Solution Approaches to the Double TSP with Multiple Stacks

    DEFF Research Database (Denmark)

    Petersen, Hanne Løhmann

    This paper introduces the Double Travelling Salesman Problem with Multiple Stacks and presents a three different metaheuristic approaches to its solution. The Double Travelling Salesman Problem with Multiple Stacks is concerned with finding the shortest route performing pickups and deliveries in ...... are developed for the problem and used with each of the heuristics. Finally some computational results are given along with lower bounds on the objective value....

  1. Heuristic Solution Approaches to the Double TSP with Multiple Stacks

    DEFF Research Database (Denmark)

    Petersen, Hanne Løhmann

    2006-01-01

    This paper introduces the Double Travelling Salesman Problem with Multiple Stacks and presents a three different metaheuristic approaches to its solution. The Double Travelling Salesman Problem with Multiple Stacks is concerned with finding the shortest route performing pickups and deliveries in ...... are developed for the problem and used with each of the heuristics. Finally some computational results are given along with lower bounds on the objective value....

  2. Modeling of a Stacked Power Module for Parasitic Inductance Extraction

    Science.gov (United States)

    2017-09-15

    ARL-TR-8138 ● SEP 2017 US Army Research Laboratory Modeling of a Stacked Power Module for Parasitic Inductance Extraction by...not return it to the originator. ARL-TR-8138 ● SEP 2017 US Army Research Laboratory Modeling of a Stacked Power Module for... Power Module for Parasitic Inductance Extraction 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Steven Kaplan

  3. Field-induced stacking transition of biofunctionalized trilayer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Masato Nakano, C. [Flintridge Preparatory School, La Canada, California 91011 (United States); Sajib, Md Symon Jahan; Samieegohar, Mohammadreza; Wei, Tao [Dan F. Smith Department of Chemical Engineering, Lamar University, Beaumont, Texas 77710 (United States)

    2016-02-01

    Trilayer graphene (TLG) is attracting a lot of attention as their stacking structures (i.e., rhombohedral vs. Bernal) drastically affect electronic and optical properties. Based on full-atom molecular dynamics simulations, we here predict electric field-induced rhombohedral-to-Bernal transition of TLG tethered with proteins. Furthermore, our simulations show that protein's electrophoretic mobility and diffusivity are enhanced on TLG surface. This phenomenon of controllable TLG stacking transition will contribute to various applications including biosensing.

  4. Reexamination of the ISABELLE box car stacking scheme

    International Nuclear Information System (INIS)

    Chasman, R.

    1975-01-01

    Box car stacking of ISABELLE after acceleration of the fundamental frequency in the AGS is reviewed with the present ISABELLE parameters and examined with regard to longitudinal impedence requirements. The scheme results in an impedance tolerance of Z/n less than or equal to 30 Ω compared to Z/n less than or equal to 5 Ω obtained for rf stacking. However, to meet the claimed luminosity, the AGS performance demands are increased above those assumed in the ISABELLE proposal

  5. National Spherical Torus Experiment (NSTX) Center Stack Upgrade

    International Nuclear Information System (INIS)

    Neumeyer, C.; Avasarala, S.; Chrzanowski, J.; Dudek, L.; Fan, H.; Hatcher, H.; Heitzenroeder, P.; Menard, J.; Ono, M.; Ramakrishnan, S.; Titus, P.; Woolley, R.; Zhan, H.

    2009-01-01

    The purpose of the NSTX Center Stack Upgrade project is to expand the NSTX operational space and thereby the physics basis for next-step ST facilities. The plasma aspect ratio (ratio of plasma major to minor radius) of the upgrade is increased to 1.5 from the original value of 1.26, which increases the cross sectional area of the center stack by a factor of ∼ 3 and makes possible higher levels of performance and pulse duration.

  6. LOFT diesel generator ''A'' exhaust stack seismic analysis

    International Nuclear Information System (INIS)

    Blandford, R.K.

    1978-01-01

    A stress analysis of the LOFT Diesel Generator ''A'' Exhaust Stack was performed to determine its reaction to Safe-Shutdown Earthquake loads. The exhaust stack silencer and supporting foundation was found to be inadequate for the postulated seismic accelerations. Lateral support is required to prevent overturning of the silencer pedestal and reinforcement of the 4'' x 0.5'' silencer base straps is necessary. Basic requirements for this additional support are discussed

  7. An experimental study of the dynamic behavior of a 2 kW proton exchange membrane fuel cell stack under various loading conditions

    International Nuclear Information System (INIS)

    Jian, Qifei; Zhao, Yang; Wang, Haoting

    2015-01-01

    The dynamic behavior of the PEM (proton exchange membrane) fuel cell stack has great effect on the safety and effective operation of its applications. In this paper, a self-designed bulb-array is used to simulate the various loading conditions and study the dynamic behavior of a 2 kW PEM fuel cell stack. An evaluation index, including oscillation rate, pressure variation and dynamic resistance factor, is used to analyze the transient response of the PEM fuel cell stack. It is observed that the stack current increases about 8.6%, and the Oscillation rate decreases more rapidly after activation. In the step-up load stage, the oscillation rate and the dynamic resistance decrease more rapidly as the external load increases. Due to the periodic anodic purge process, a periodic voltage fluctuation can be seen. In addition, when the stack works in the open-loop state (working without the external load), the transient response of the stack current is significantly affected by the hydrogen humidity and the charge double-layer. - Highlights: • The working time of open-loop state significantly affects the transient response. • Oscillation rate decreases faster as the external load increases. • Dynamic resistance factor decreases as the external load increases. • The periodic anodic purge process leads to a slight periodic oscillation of voltage

  8. New approach for dynamic flow management within the PEMFC stack

    International Nuclear Information System (INIS)

    Varlam, Mihai; Culcer, Mihai; Carcadea, Elena; Stefanescu, Ioan; Iliescu, Mariana; Enache, Adrian

    2009-01-01

    An adequate gas and water flow management is a key issue to reach and maintain a higher output power for a PEM fuel cell stack. One of the main aspects which could limit the performance of a PEM fuel cell stack is the weak capability for a non-uniform water distribution management within the fuel cell. The produced water could become a handicap to attain the best working performance by blocking the catalytic surfaces and by preventing the mass transport process. Usually, the excess water is removed in one cell, comparatively to others from the stack and taking into account that all the cells are supplied in parallel from a common air admission pipe, a limitation of gas flow rate within that cell is created. Consequently, this constraint will reduce further the water removal speed. This feedback process will generate finally a drastic decrease of the fuel cell stack performance. A new practical solution to this water and gas non-uniformity of distributions problem is to use a sequential purge procedure of several fuel cell groups inside the stack which could guarantee a right management of water. An experimental setup has been built based on four fuel cell stack. Every fuel cell was connected to a single removal pipe via a solenoid valve. A computer-controlled hardware and software system has been designed and built, in order to generate a given opening-closing sequence for the automatic valve system. (authors)

  9. Dual-layer ultrathin film optics: I. Theory and analysis

    International Nuclear Information System (INIS)

    Wang, Qian; Lim, Kim Peng

    2015-01-01

    This paper revisits dual-layer ultrathin film optics, which can be used for functional graded refractive index thin film stack. We present the detailed derivation including s-polarized and p-polarized light under arbitrary incidence angle showing the equivalence between the dual-layer ultrathin films and a negative birefringent thin film and also the approximations made during the derivation. Analysis of the approximations shows the influence of thickness of dual-layer thin films, the incidence angle and desired refractive index of the birefringent film. Numerical comparison between the titanium dioxide/aluminum oxide based dual-layer ultrathin film stack and the equivalent birefringent film verifies the theoretical analysis. The detailed theoretical study and numerical comparison provide a physical insight and design guidelines for dual-layer ultrathin film based optical devices. (paper)

  10. Stacking order dependent mechanical properties of graphene/MoS{sub 2} bilayer and trilayer heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Elder, Robert M., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Neupane, Mahesh R., E-mail: robert.elder26.ctr@mail.mil, E-mail: mahesh.neupane.ctr@mail.mil; Chantawansri, Tanya L. [U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States)

    2015-08-17

    Transition metal dichalcogenides (TMDC) such as molybdenum disulfide (MoS{sub 2}) are two-dimensional materials that show promise for flexible electronics and piezoelectric applications, but their weak mechanical strength is a barrier to practical use. In this work, we perform nanoindentation simulations using atomistic molecular dynamics to study the mechanical properties of heterostructures formed by combining MoS{sub 2} with graphene. We consider both bi- and tri-layer heterostructures formed with MoS{sub 2} either supported or encapsulated by graphene. Mechanical properties, such as Young's modulus, bending modulus, ultimate tensile strength, and fracture strain, are extracted from nanoindentation simulations and compared to the monolayer and homogeneous bilayer systems. We observed that the heterostructures, regardless of the stacking order, are mechanically more robust than the mono- and bi-layer MoS{sub 2}, mainly due to the mechanical reinforcement provided by the graphene layer. The magnitudes of ultimate strength and fracture strain are similar for both the bi- and tri-layer heterostructures, but substantially larger than either the mono- and bi-layer MoS{sub 2}. Our results demonstrate the potential of graphene-based heterostructures to improve the mechanical properties of TMDC materials.

  11. Multi-electrode double layer capacitor having single electrolyte seal and aluminum-impregnated carbon cloth electrodes

    Science.gov (United States)

    Farahmandi, C. Joseph; Dispennette, John M.; Blank, Edward; Kolb, Alan C.

    1999-01-19

    A single cell, multi-electrode high performance double layer capacitor includes first and second flat stacks of electrodes adapted to be housed in a closeable two-part capacitor case which includes only a single electrolyte seal. Each electrode stack has a plurality of electrodes connected in parallel, with the electrodes of one stack being interleaved with the electrodes of the other stack to form an interleaved stack, and with the electrodes of each stack being electrically connected to respective capacitor terminals. A porous separator sleeve is inserted over the electrodes of one stack before interleaving to prevent electrical shorts between the electrodes. The electrodes are made by folding a compressible, low resistance, aluminum-impregnated carbon cloth, made from activated carbon fibers, around a current collector foil, with a tab of the foils of each electrode of each stack being connected in parallel and connected to the respective capacitor terminal. The height of the interleaved stack is somewhat greater than the inside height of the closed capacitor case, thereby requiring compression of the interleaved electrode stack when placed inside of the case, and thereby maintaining the interleaved electrode stack under modest constant pressure. The closed capacitor case is filled with an electrolytic solution and sealed. A preferred electrolytic solution is made by dissolving an appropriate salt into acetonitrile (CH.sub.3 CN). In one embodiment, the two parts of the capacitor case are conductive and function as the capacitor terminals.

  12. Trapping a magnetic field of 7.9 T using a bulk magnet fabricated from stack of coated conductors

    International Nuclear Information System (INIS)

    Tamegai, T.; Hirai, T.; Sun, Y.; Pyon, S.

    2016-01-01

    Highlight: • A bulk magnet is fabricated using double stack of coated conductors (CC). • Magneto-optical imaging of the CC confirmed its homogeneity. • The fabricated bulk magnet has successfully trapped a magnetic field of 7.9 T. • The trapped magnetic field is consistent with the magnetic induction calculated from J_c(B) characteristics of the CC. - Abstract: We have fabricated a bulk magnet using double stack, each 130 layers, of short segments of coated conductors (CCs). The bulk magnet is magnetized by field-cooling in a magnetic field of 9 T down to 4.2 K. After reducing the magnetic field down to zero, we have successfully trapped a magnetic field of 7.9 T at the centre of the double stack. The magnetic field profile of the bulk magnet is calculated by fully considering the J_c(B) characteristics of the short segment of the CC. The trapped magnetic field values measured by Hall probes at three locations near the centre of the double stacks agree reasonably well with the calculated magnetic induction.

  13. Thermal stress analysis of a planar SOFC stack

    Science.gov (United States)

    Lin, Chih-Kuang; Chen, Tsung-Ting; Chyou, Yau-Pin; Chiang, Lieh-Kwang

    The aim of this study is, by using finite element analysis (FEA), to characterize the thermal stress distribution in a planar solid oxide fuel cell (SOFC) stack during various stages. The temperature profiles generated by an integrated thermo-electrochemical model were applied to calculate the thermal stress distributions in a multiple-cell SOFC stack by using a three-dimensional (3D) FEA model. The constructed 3D FEA model consists of the complete components used in a practical SOFC stack, including positive electrode-electrolyte-negative electrode (PEN) assembly, interconnect, nickel mesh, and gas-tight glass-ceramic seals. Incorporation of the glass-ceramic sealant, which was never considered in previous studies, into the 3D FEA model would produce more realistic results in thermal stress analysis and enhance the reliability of predicting potential failure locations in an SOFC stack. The effects of stack support condition, viscous behavior of the glass-ceramic sealant, temperature gradient, and thermal expansion mismatch between components were characterized. Modeling results indicated that a change in the support condition at the bottom frame of the SOFC stack would not cause significant changes in thermal stress distribution. Thermal stress distribution did not differ significantly in each unit cell of the multiple-cell stack due to a comparable in-plane temperature profile. By considering the viscous characteristics of the glass-ceramic sealant at temperatures above the glass-transition temperature, relaxation of thermal stresses in the PEN was predicted. The thermal expansion behavior of the metallic interconnect/frame had a greater influence on the thermal stress distribution in the PEN than did that of the glass-ceramic sealant due to the domination of interconnect/frame in the volume of a planar SOFC assembly.

  14. Improvement of the optical quality of site-controlled InAs quantum dots by a double stack growth technique in wet-chemically etched holes

    Energy Technology Data Exchange (ETDEWEB)

    Pfau, Tino Johannes; Gushterov, Aleksander; Reithmaier, Johann-Peter [Technische Physik, INA, Universitaet Kassel (Germany); Cestier, Isabelle; Eisenstein, Gadi [Electrical Engineering Dept., Technion, Haifa (Israel); Linder, Evgany; Gershoni, David [Solid State Institute and Physics Dept., Technion, Haifa (Israel)

    2010-07-01

    The optimization of the wet-chemically etching of holes and a special MBE growth stack technique allows enlarging the site-control of low density InAs QDs on GaAs substrates up to a buffer layer thickness of 55 nm. The strain of InAs QDs, grown in the etched holes, reduces the hole closing, so that a pre-patterned surface is conserved for the second QD layer. The distance of 50 nm GaAs between the two QD layers exceeds drastically the maximum vertical alignment based on pure strain coupling (20 nm). Compared to stacks with several QD layers, this method avoids electronic coupling between the different QD layers and reduces the problems to distinguish the dots of different layers optically. Confocal microphotoluminescence reveals a significant diminution of the low temperature photoluminescence linewidth of the second InAs QD layer to an average value of 505{+-}53 {mu}eV and a minimum width of 460 {mu}eV compared to 2 to 4 meV for QDs grown on thin buffer layers. The increase of the buffer layer thickness decreases the influence of the surface defects caused by prepatterning.

  15. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ogawa, Shingo [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Yoshigoe, Akitaka; Teraoka, Yuden [Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  16. Electromagnetic waves in a topological insulator thin film stack: helicon-like wave mode and photonic band structure.

    Science.gov (United States)

    Inoue, Jun-ichi

    2013-09-09

    We theoretically explore the electromagnetic modes specific to a topological insulator superlattice in which topological and conventional insulator thin films are stacked periodically. In particular, we obtain analytic formulas for low energy mode that corresponds to a helicon wave, as well as those for photonic bands. We illustrate that the system can be modeled as a stack of quantum Hall layers whose conductivity tensors alternately change signs, and then we analyze the photonic band structures. This subject is a natural extension of a previous study by Tselis et al., which took into consideration a stack of identical quantum Hall layers but their discussion was limited into a low energy mode. Thus we provide analytic formulas for photonic bands and compare their features between the two systems. Our central findings in the topological insulator superlattice are that a low energy mode corresponding to a helicon wave has linear dispersion instead of the conventional quadratic form, and that a robust gapless photonic band appears although the system considered has spacial periodicity. In addition, we demonstrate that the photonic bands agree with the numerically calculated transmission spectra.

  17. Structure of kaolinite and influence of stacking faults: reconciling theory and experiment using inelastic neutron scattering analysis.

    Science.gov (United States)

    White, Claire E; Kearley, Gordon J; Provis, John L; Riley, Daniel P

    2013-05-21

    The structure of kaolinite at the atomic level, including the effect of stacking faults, is investigated using inelastic neutron scattering (INS) spectroscopy and density functional theory (DFT) calculations. The vibrational dynamics of the standard crystal structure of kaolinite, calculated using DFT (VASP) with normal mode analysis, gives good agreement with the experimental INS data except for distinct discrepancies, especially for the low frequency modes (200-400 cm(-1)). By generating several types of stacking faults (shifts in the a,b plane for one kaolinite layer relative to the adjacent layer), it is seen that these low frequency modes are affected, specifically through the emergence of longer hydrogen bonds (O-H⋯O) in one of the models corresponding to a stacking fault of -0.3151a - 0.3151b. The small residual disagreement between observed and calculated INS is assigned to quantum effects (which are not taken into account in the DFT calculations), in the form of translational tunneling of the proton in the hydrogen bonds, which lead to a softening of the low frequency modes. DFT-based molecular dynamics simulations show that anharmonicity does not play an important role in the structural dynamics of kaolinite.

  18. Performance of PZT stacks under high-field electric cycling at various temperatures in heavy-duty diesel engine fuel injectors

    Science.gov (United States)

    Wang, Hong; Lee, Sung-Min; Lin, Hua-Tay; Stafford, Randy

    2016-04-01

    Testing and characterization of large prototype lead zirconate titanate (PZT) stacks present substantial technical challenges to electronic systems. The work in this study shows that an alternative approach can be pursued by using subunits extracted from prototype stacks. Piezoelectric and dielectric integrity was maintained even though the PZT plate specimens experienced an additional loading process involved with the extraction after factory poling. Extracted 10-layer plate specimens were studied by an electric cycle test under an electric field of 3.0/0.0 kV/mm, 100 Hz to 108 cycles, both at room temperature (22°C) and at 50°C. The elevated temperature had a defined impact on the fatigue of PZT stacks. About 48 and 28% reductions were observed in the piezoelectric and dielectric coefficients, respectively, after 108 cycles at 50°C, compared with reductions of 25 and 15% in the respective coefficients at 22°C. At the same time, the loss tangent varied to a limited extent. The evolution of PZT-electrode interfacial layers or nearby dielectric layers should account for the difference in the fatigue rates of piezoelectric and dielectric coefficients. But the basic contribution to observed fatigue may result from the buildup of a bias field that finally suppressed the motion of the domain walls. Finally, monitoring of dielectric coefficients can be an effective tool for on-line lifetime prediction of PZT stacks in service if a failure criterion is defined properly.

  19. Validation of a HT-PEMFC stack for CHP applications

    Energy Technology Data Exchange (ETDEWEB)

    Pasupathi, S.; Ulleberg, Oe. [Western Cape Univ. (South Africa). HySA Systems, SAIAMC; Bujlo, P. [Western Cape Univ. (South Africa). HySA Systems, SAIAMC; Electrotechnical Institute Wroclaw Division (Poland); Scholta, J. [Centre for Solar Energy and Hydrogen Research (ZSW) (Germany)

    2010-07-01

    Fuel cell systems are very attractive for stationary co-generation applications as they can produce heat and electricity efficiently in a decentralized and environmentally friendly manner. PEMFC stacks operating at temperatures above 120 C, specifically in the range of 140-180 C, are ideal for co-generation purposes. In this study, preliminary results from a HTPEMFC stack designed for CHP applications is presented and discussed. A short, five-cell, HT-PEMFC stack was assembled with Celtec- P-2100 MEAs and validated in terms of electrical performance. The stack was operated with hydrogen and air at 160 C and the utilization curves for anode and cathode were recorded for a wide range of gas utilization at a current density of 0.52 A/cm{sup 2}. The current voltage characteristic was measured at optimal utilization values at 160 C. A 1kW stack is assembled and is currently being validated for its performance under various operating conditions for use in CHP applications. (orig.)

  20. Optimization of hole generation in Ti/CFRP stacks

    Science.gov (United States)

    Ivanov, Y. N.; Pashkov, A. E.; Chashhin, N. S.

    2018-03-01

    The article aims to describe methods for improving the surface quality and hole accuracy in Ti/CFRP stacks by optimizing cutting methods and drill geometry. The research is based on the fundamentals of machine building, theory of probability, mathematical statistics, and experiment planning and manufacturing process optimization theories. Statistical processing of experiment data was carried out by means of Statistica 6 and Microsoft Excel 2010. Surface geometry in Ti stacks was analyzed using a Taylor Hobson Form Talysurf i200 Series Profilometer, and in CFRP stacks - using a Bruker ContourGT-Kl Optical Microscope. Hole shapes and sizes were analyzed using a Carl Zeiss CONTURA G2 Measuring machine, temperatures in cutting zones were recorded with a FLIR SC7000 Series Infrared Camera. Models of multivariate analysis of variance were developed. They show effects of drilling modes on surface quality and accuracy of holes in Ti/CFRP stacks. The task of multicriteria drilling process optimization was solved. Optimal cutting technologies which improve performance were developed. Methods for assessing thermal tool and material expansion effects on the accuracy of holes in Ti/CFRP/Ti stacks were developed.

  1. Effect of flow parameters on flare stack generator noise

    International Nuclear Information System (INIS)

    Dinn, T.S.

    1998-01-01

    The SoundPLAN Computer Noise Model was used to determine the general effect of flare noise in a community adjacent to a petrochemical plant. Tests were conducted to determine the effect of process flow conditions and the pulsating flame on the flare stack generator noise from both a refinery flare and process flare. Flaring under normal plant operations, the flaring of fuel gas and the flaring of hydrogen were the three conditions that were tested. It was shown that the steam flow rate was the determining factor in the flare stack generated noise. Variations in the water seal level in the flare line surge tank increased or decreased the gas flowrate, which resulted in a pulsating flame. The period and amplitude of the pulsating noise from the flare stacks was determined by measuring several parameters. Flare stack noise oscillations were found to be greater for the process flare than for the refinery flare stack. It was suggested that minimizing the amount of steam fed to the flare and improving the burner design would minimize noise. 2 tabs., 6 figs

  2. Charge transfer in pi-stacked systems including DNA

    International Nuclear Information System (INIS)

    Siebbeles, L.D.A.

    2003-01-01

    Charge migration in DNA is a subject of intense current study motivated by long-range detection of DNA damage and the potential application of DNA as a molecular wire in nanoscale electronic devices. A key structural element, which makes DNA a medium for long-range charge transfer, is the array of stacked base pairs in the interior of the double helix. The overlapping pi-orbitals of the nucleobases provide a pathway for motion of charge carriers generated on the stack. This 'pi-pathway' resembles the columnarly stacked macrocyclic cores in discotic materials such as triphenylenes. The structure of these pi-stacked systems is highly disordered with dynamic fluctuations occurring on picosecond to nanosecond time scales. Theoretical calculations, concerning the effects of structural disorder and nucleobase sequence in DNA, on the dynamics of charge carriers are presented. Electronic couplings and localization energies of charge carriers were calculated using density functional theory (DFT). Results for columnarly stacked triphenylenes and DNA nucleobases are compared. The results are used to provide insight into the factors that control the mobility of charge carriers. Further, experimental results on the site-selective oxidation of guanine nucleobases in DNA (hot spots for DNA damage) are analyzed on basis of the theoretical results

  3. Generalized diffraction-stack migration and filtering of coherent noise

    KAUST Repository

    Zhan, Ge

    2014-01-27

    We reformulate the equation of reverse-time migration so that it can be interpreted as summing data along a series of hyperbola-like curves, each one representing a different type of event such as a reflection or multiple. This is a generalization of the familiar diffraction-stack migration algorithm where the migration image at a point is computed by the sum of trace amplitudes along an appropriate hyperbola-like curve. Instead of summing along the curve associated with the primary reflection, the sum is over all scattering events and so this method is named generalized diffraction-stack migration. This formulation leads to filters that can be applied to the generalized diffraction-stack migration operator to mitigate coherent migration artefacts due to, e.g., crosstalk and aliasing. Results with both synthetic and field data show that generalized diffraction-stack migration images have fewer artefacts than those computed by the standard reverse-time migration algorithm. The main drawback is that generalized diffraction-stack migration is much more memory intensive and I/O limited than the standard reverse-time migration method. © 2014 European Association of Geoscientists & Engineers.

  4. 3D monolithically stacked CMOS active pixel sensor detectors for particle tracking applications

    International Nuclear Information System (INIS)

    Passeri, D; Placidi, P; Servoli, L; Meroli, S; Magalotti, D; Marras, A

    2012-01-01

    In this work we propose an innovative approach to particle tracking based on CMOS Active Pixel Sensors layers, monolithically integrated in an all-in-one chip featuring multiple, stacked, fully functional detector layers capable to provide momentum measurement (particle impact point and direction) within a single detector. This will results in a very low material detector, thus dramatically reducing multiple scattering issues. To this purpose, we rely on the capabilities of the CMOS vertical scale integration (3D IC) technology. A first chip prototype has been fabricated within a multi-project run using a 130 nm CMOS Chartered/Tezzaron technology, featuring two layers bonded face-to-face. Tests have been carried out on full 3D structures, providing the functionalities of both tiers. To this purpose, laser scans have been carried out using highly focussed spot size obtaining coincidence responses of the two layers. Tests have been made as well with X-ray sources in order to calibrate the response of the sensor. Encouraging results have been found, fostering the suitability of both the adopted 3D-IC vertical scale fabrication technology and the proposed approach for particle tracking applications.

  5. Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

    International Nuclear Information System (INIS)

    Zhang ShuXiang; Yang Hong; Tang Bo; Tang Zhaoyun; Xu Yefeng; Xu Jing; Yan Jiang

    2014-01-01

    ALD HfO 2 films fabricated by a novel multi deposition multi annealing (MDMA) technique are investigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing (D and A), devices receiving MDMA show a significant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer. This improvement strongly correlates with the cycle number of D and A (while keeping the total annealing time and total dielectrics thickness the same). Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be responsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme. (semiconductor technology)

  6. Post-test characterization of a solid oxide fuel cell stack operated for more than 30,000 hours: The cell

    Science.gov (United States)

    Menzler, Norbert H.; Sebold, Doris; Guillon, Olivier

    2018-01-01

    A four-layer solid oxide fuel cell stack with planar anode-supported cells was operated galvanostatically at 700 °C and 0.5Acm-2 for nearly 35,000 h. One of the four planes started to degrade more rapidly after ∼28,000 h and finally more progressively after ∼33,000 h. The stack was then shut down and a post-test analysis was carefully performed. The cell was characterized with respect to cathodic impurities and clarification of the reason(s) for failure. Wet chemical analysis revealed very low chromium incorporation into the cathode. However, SEM and TEM observations on polished and fractured surfaces showed catastrophic failure in the degraded layer. The cathode-barrier-electrolyte cell layer system delaminated from the entire cell over large areas. The source of delamination was the formation of a porous, sponge-like secondary phase consisting of zirconia, yttria and manganese (oxide). Large secondary phase islands grew from the electrolyte-anode interface towards the anode and cracked the bonding between both layers. The manganese originated from the contact or protection layers used on the air side. This stack result shows that volatile species - in this case manganese - should be avoided, especially when long-term applications are envisaged.

  7. A Urea Biosensor from Stacked Sol-Gel Films with Immobilized Nile Blue Chromoionophore and Urease Enzyme

    Directory of Open Access Journals (Sweden)

    Musa Ahmad

    2007-10-01

    Full Text Available An optical urea biosensor was fabricated by stacking several layers of sol-gelfilms. The stacking of the sol-gel films allowed the immobilization of a Nile Bluechromoionophore (ETH 5294 and urease enzyme separately without the need of anychemical attachment procedure. The absorbance response of the biosensor was monitoredat 550 nm, i.e. the deprotonation of the chromoionophore. This multi-layer sol-gel filmformat enabled higher enzyme loading in the biosensor to be achieved. The urea opticalbiosensor constructed from three layers of sol-gel films that contained urease demonstrateda much wider linear response range of up to 100 mM urea when compared with biosensorsthat constructed from 1-2 layers of films. Analysis of urea in urine samples with thisoptical urea biosensor yielded results similar to that determined by a spectrophotometricmethod using the reagent p-dimethylaminobenzaldehyde (R2 = 0.982, n = 6. The averagerecovery of urea from urine samples using this urea biosensor is approximately 103%.

  8. A Urea Biosensor from Stacked Sol-Gel Films with Immobilized Nile Blue Chromoionophore and Urease Enzyme.

    Science.gov (United States)

    Alqasaimeh, Muawia Salameh; Heng, Lee Yook; Ahmad, Musa

    2007-10-11

    An optical urea biosensor was fabricated by stacking several layers of sol-gelfilms. The stacking of the sol-gel films allowed the immobilization of a Nile Bluechromoionophore (ETH 5294) and urease enzyme separately without the need of anychemical attachment procedure. The absorbance response of the biosensor was monitoredat 550 nm, i.e. the deprotonation of the chromoionophore. This multi-layer sol-gel filmformat enabled higher enzyme loading in the biosensor to be achieved. The urea opticalbiosensor constructed from three layers of sol-gel films that contained urease demonstrateda much wider linear response range of up to 100 mM urea when compared with biosensorsthat constructed from 1-2 layers of films. Analysis of urea in urine samples with thisoptical urea biosensor yielded results similar to that determined by a spectrophotometricmethod using the reagent p-dimethylaminobenzaldehyde (R² = 0.982, n = 6). The averagerecovery of urea from urine samples using this urea biosensor is approximately 103%.

  9. Rearrangement of van der Waals stacking and formation of a singlet state at T = 90 K in a cluster magnet

    Energy Technology Data Exchange (ETDEWEB)

    Sheckelton, John P.; Plumb, Kemp W.; Trump, Benjamin A.; Broholm, Collin L.; McQueen, Tyrel M.

    2017-01-01

    Insulating Nb3Cl8 is a layered chloride consisting of two-dimensional triangular layers of Seff = 1/2 Nb3Cl13 clusters at room temperature. Magnetic susceptibility measurement show a sharp, hysteretic drop to a temperature independent value below T = 90 K. Specific heat measurements show that the transition is first order, with ΔS ≈ 5 J K-1 mol-1 f.u.-1, and a low temperature T-linear contribution originating from defect spins. Neutron and X-ray diffraction show a lowering of symmetry from trigonal P[3 with combining macron]m1 to monoclinic C2/m symmetry, with a change in layer stacking from –AB–AB– to –AB'–BC'–CA'– and no observed magnetic order. This lowering of symmetry and rearrangement of successive layers evades geometric magnetic frustration to form a singlet ground state. It is the lowest temperature at which a change in stacking sequence is known to occur in a van der Waals solid, occurs in the absence of orbital degeneracies, and suggests that designer 2-D heterostructures may be able to undergo similar phase transitions.

  10. Multilayer, Stacked Spiral Copper Inductors on Silicon with Micro-Henry Inductance Using Single-Level Lithography

    Directory of Open Access Journals (Sweden)

    Timothy Reissman

    2012-01-01

    Full Text Available We present copper structures composed of multilayer, stacked inductors (MLSIs with tens of micro-Henry inductance for use in low frequency (sub 100 MHz, power converter technology. Unique to this work is the introduction of single-level lithography over the traditional two-level approach to create each inductor layer. The result is a simplified fabrication process which results in a reduction in the number of lithography steps per inductor (metal layer and a reduction in the necessary alignment precision. Additionally, we show that this fabrication process yields strong adhesion amongst the layers, since even after a postprocess abrasion technique at the inner diameter of the inductors, no shearing occurs and connectivity is preserved. In total, three separate structures were fabricated using the single-level lithography approach, each with a three-layered, stacked inductor design but with varied geometries. Measured values for each of the structures were extracted, and the following results were obtained: inductance values of 24.74, 17.25, and 24.74 μH, self-resonances of 9.87, 5.72, and 10.58 MHz, and peak quality factors of 2.26, 2.05, and 4.6, respectively. These values are in good agreement with the lumped parameter model presented.

  11. Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack

    International Nuclear Information System (INIS)

    Park, Woojin; Yang, Jin Ho; Kang, Chang Goo; Lee, Young Gon; Hwang, Hyeon Jun; Kang, Soo Cheol; Lee, Sang Kyung; Lee, Byoung Hun; Cho, Chunhum; Lim, Sung Kwan; Lee, Sangchul; Hong, Woong-Ki

    2013-01-01

    A new touch sensor device has been demonstrated with molybdenum disulfide (MoS 2 ) field effect transistors stacked with a piezoelectric polymer, polyvinylidene fluoride–trifluoroethylene (PVDF–TrFE). The performance of two device stack structures, metal/PVDF–TrFE/MoS 2 (MPM) and metal/PVDF–TrFE/Al 2 O 3 /MoS 2 (MPAM), were compared as a function of the thickness of PVDF–TrFE and Al 2 O 3 . The sensitivity of the touch sensor has been improved by two orders of magnitude by reducing the charge scattering and enhancing the passivation effects using a thin Al 2 O 3 interfacial layer. Reliable switching behavior has been demonstrated up to 120 touch press cycles. (paper)

  12. Spectroscopic Signatures for Interlayer Coupling in MoS 2 –WSe 2 van der Waals Stacking

    KAUST Repository

    Chiu, Ming-Hui

    2014-09-23

    Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 degrees C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(1g)(2) for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E \\'\\' for MoS2 at 286 cm(-1) and A(1g)(2) for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling.

  13. Spectroscopic Signatures for Interlayer Coupling in MoS 2 –WSe 2 van der Waals Stacking

    KAUST Repository

    Chiu, Ming-Hui; Li, Ming-Yang; Zhang, Wengjing; Hsu, Wei-Ting; Chang, Wen-Hao; Terrones, Mauricio; Terrones, Humberto; Li, Lain-Jong

    2014-01-01

    Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 degrees C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(1g)(2) for WSe2 (309 cm(-1)) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E '' for MoS2 at 286 cm(-1) and A(1g)(2) for MoS2 at around 463 cm(-1) confirm the enhancement of the interlayer coupling.

  14. Stability study of pre-stack seismic inversion based on the full Zoeppritz equation

    Science.gov (United States)

    Liang, Lifeng; Zhang, Hongbing; Guo, Qiang; Saeed, Wasif; Shang, Zuoping; Huang, Guojiao

    2017-10-01

    Pre-stack seismic inversion is highly important and complicated. Its result is non-unique, and the process is unstable because pre-stack seismic inversion is an ill-posed problem that simultaneously obtains the results of multiple parameters. Combining the full Zoeppritz equation and additional assumptions with edge-preserving regularization (EPR) can help mitigate the problem. To achieve this combination, we developed an inversion method by constructing a new objective function, which includes the EPR and the Markov random field. The method directly gains reflectivity R PP by the full Zoeppritz equation instead of its approximations and effectively controls the stability of simultaneous inversion by two additional assumptions: the sectional constant V S/V P and the generalized Gardner equation. Thus, the simultaneous inversion of multiple parameters is directed toward to V P, ΔL S (the fitting deviation of V S) and density, and the generalized Gardner equation is regarded as a constraint from which the fitting relationship is derived. We applied the fast simulated annealing algorithm to solve the nonlinear optimization problem. The test results on 2D synthetic data indicated that the stability of simultaneous inversion for V P, ΔL S and density is better than these for V P, V S, and density. The inverted result of density gradually worsens as the deviation ΔL D (the fitting deviation of the density) increases. Moreover, the inverted results were acceptable when using the fitting relationships with error, although they showed varying degrees of influence. We constructed time-varying and space-varying fitting relationships using the logging data in pre-stack inversion of the field seismic data. This improved the inverted results of the simultaneous inversion for complex geological models. Finally, the inverted results of the field data distinctly revealed more detailed information about the layers and matched well with the logging data along the wells over most

  15. Thermoacoustic design using stem of goose down stack

    Science.gov (United States)

    Farikhah, Irna; Ristanto, Sigit; Idrus, Hadiyati; Kaltsum, Ummi; Faisal, Affandi; Setiawan, Ihsan; Setio Utomo, Agung Bambang

    2012-09-01

    Many refrigerators using CFC as a refrigerant are seen as the cause of the depletion of ozone. Hence, thermoacoustic was chosen as an alternative refrigerator that safe for environment. There are many variable that influenced the optimization of thermoacoustic design. One of them is thermal conductivity of material of stack. The Stack material must have a low thermal conductivity. In this research we used organic stack made of stem of goose down. It has superior thermal insulating. It means that they have the lowest thermal conductivity. The system uses no refrigerant or compressor, and the only mechanical moving part is the loudspeaker connected to a signal generator that produces the acoustic. The working fluid is air and the material of resonator is stainless steel. A series test on the laboratory found that there is a decrease of 5°C in temperature for about 2 minutes.

  16. The operation and monitoring of sewage disposal by stack injection

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, D.A. [Alyeska Pipeline Service Co. (United States)

    1994-12-31

    A system that uses turbine exhaust to evaporate sewage, was described. The Alyeska Pipeline Service developed the system for isolated pump stations located in permafrost areas. The pumps moving the crude oil in the Trans Alaska Pipeline System (TAPS) were driven by simple cycle gas turbine engines which produce large amounts of waste heat. The waste heat was used to evaporate the sewage effluent, effectively destroying all pathogens in it. The process, known as `stack injection`, was recently upgraded to increase efficiency and safety. Stack injection was being used at five pump stations. Methods used to control operation of the stack injection system, and field data used to redesign the system were reviewed. 3 figs., 3 refs.

  17. Multipole Stack for the 800 MeV PS Booster

    CERN Multimedia

    1975-01-01

    The 800 MeV PS Booster had seen first beam in its 4 superposed rings in 1972, routine operation began in 1973. In the strive for ever higher beam intensities, the need for additional multipole lenses became evident. After detailed studies, the manufacture of 8 stacks of multipoles was launched in 1974. Each stack consists of 4 superposed multipoles and each multipole has 4 concentric shells. From the innermost to the outermost shell, Type A contains octupole, skew-octupole, sextupole, skew-sextupole. Type B contains skew-octupole, skew-sextupole, vertical dipole, horizontal dipole. Completion of installation in 1976 opened the way to higher beam intensities. M. Battiaz is seen here with a multipole stack and its many electrical connections.

  18. Fluxons in long and annular intrinsic Josephson junction stacks

    CERN Document Server

    Clauss, T; Moessle, M; Müller, A; Weber, A; Kölle, D; Kleiner, R

    2002-01-01

    A promising approach towards a THz oscillator based on intrinsic Josephson junctions in high-temperature superconductors is based on the collective motion of Josephson fluxons, which are predicted to form various configurations ranging from a triangular to a quadratic lattice. Not only for this reason, but certainly also for the sake of basic physics, several experimental and theoretical investigations have been done on the subject of collective fluxon dynamics in stacked intrinsic Josephson junctions. In this paper we will present some experimental results on the fluxon dynamics of long intrinsic Josephson junction stacks made of Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8. The stacks were formed either in an open or in an annular geometry, and clear resonant fluxon modes were observed. Experiments discussed include measurements of current-voltage characteristics in external magnetic fields and in external microwave fields.

  19. Frictional forces in an SOFC stack with sliding seals

    Energy Technology Data Exchange (ETDEWEB)

    Yamazaki, T; Oishi, N; Namikawa, T; Yamazaki, Y [Tokyo Institute of Technology, Tokyo (Japan)

    1996-06-05

    The detrimental thermal stresses in planar SOFC stacks can be reduced using sliding seals. In the proposal planar stack the electrolyte film is sandwiched by YSZ support rings to release the thermal stresses. In order to estimate the strength of the support ring, the frictional forces between heat resistant alloy and YSZ were measured at 900{degree}C. The coefficient of friction between Hastelloy X and YSZ increased when they were measured lifter 144h heating. However, the coefficient of friction between HA-214 and YSZ did not increase. The measurement and a calculation of the stresses in the support rings led the result that a thickness of 0.6mm was necessary for 200mm diameter support rings under a stack pressure of 0.1kgcm{sup -2}. 6 refs., 9 figs., 1 tab.

  20. The Stack-Size of Combinatorial Tries Revisited

    Directory of Open Access Journals (Sweden)

    Markus E. Nebel

    2002-12-01

    Full Text Available In the present paper we consider a generalized class of extended binary trees in which leaves are distinguished in order to represent the location of a key within a trie of the same structure. We prove an exact asymptotic equivalent to the average stack-size of trees with α internal nodes and β leaves corresponding to keys; we assume that all trees with the same parameters α and β have the same probability. The assumption of that uniform model is motivated for example by the usage of tries for the compression of blockcodes. Furthermore, we will prove asymptotics for the r-th moments of the stack-size and we will show that a normalized stack-size possesses a theta distribution in the limit.

  1. Stacking and discontinuous buffers in capillary zone electrophoresis.

    Science.gov (United States)

    Shihabi, Z K

    2000-08-01

    Discontinuous buffers for capillary zone electrophoresis (CZE) can be used under less rigid conditions compared to those for isotachophoresis for stacking. They can be prepared simply by modifying the sample itself, either by addition of small inorganic ions, low conductivity diluents, or both, and also by adjusting its pH, meanwhile injecting a large volume on the capillary. Zwitterionic and organic-based buffers such as triethanolamine and tris(hydroxymethyl)aminomethane (Tris) are well suited for stacking due to their low conductivity, provided the buffer is discontinuous as demonstrated here. A simple mechanism based on discontinuous buffers is described to explain many of the observed stacking types in CZE, pointing out the many similarities to transient isotachophoresis.

  2. Salt Concentration Differences Alter Membrane Resistance in Reverse Electrodialysis Stacks

    KAUST Repository

    Geise, Geoffrey M.

    2014-01-14

    Membrane ionic resistance is usually measured by immersing the membrane in a salt solution at a single, fixed concentration. While salt concentration is known to affect membrane resistance when the same concentration is used on both sides of the membrane, little is known about membrane resistance when the membrane is placed between solutions of different concentrations, such as in a reverse electrodialysis (RED) stack. Ionic resistance measurements obtained using Selemion CMV and AMV that separated sodium chloride and ammonium bicarbonate solutions of different concentrations were greater than those measured using only the high-concentration solution. Measured RED stack resistances showed good agreement with resistances calculated using an equivalent series resistance model, where the membranes accounted for 46% of the total stack resistance. The high area resistance of the membranes separating different salt concentration solutions has implications for modeling and optimizing membranes used in RED systems.

  3. Architecture Design Approaches and Issues in Cross Layer Systems

    DEFF Research Database (Denmark)

    Cattoni, Andrea Fabio; Sørensen, Troels Bundgaard; Mogensen, Preben

    2012-01-01

    the traditional protocol stack design methodology. However, Cross Layer also carries a risk due to possibly unexpected and undesired effects. In this chapter we want to provide architecture designers with a set of tools and recommendations synthesized from an analysis of the state of art, but enriched...

  4. Effect of fiber angle orientation and stacking sequence on mixed mode fracture toughness of carbon fiber reinforced plastics: Numerical and experimental investigations

    International Nuclear Information System (INIS)

    Naghipour, P.; Bartsch, M.; Chernova, L.; Hausmann, J.; Voggenreiter, H.

    2010-01-01

    This paper focuses on the effect of fiber orientation and stacking sequence on the progressive mixed mode delamination failure in composite laminates using fracture experiments and finite element (FE) simulations. Every laminate is modelled numerically combining damageable layers with defined fiber orientations and cohesive zone interface elements, subjected to mixed mode bending. The numerical simulations are then calibrated and validated through experiments, conducted following standardized mixed mode delamination tests. The numerical model is able to successfully capture the experimentally observed effects of fiber angle orientations and variable stacking sequences on the global load-displacement response and mixed mode inter-laminar fracture toughness of the various laminates. For better understanding of the failure mechanism, fracture surfaces of laminates with different stacking sequences are also studied using scanning electron microscopy (SEM).

  5. Copper based superconductors by the combination of blocking and mediating layers

    International Nuclear Information System (INIS)

    Shimizu, K.; Nobumasa, H.; Kawai, T.

    1992-01-01

    Copper based high temperature superconductors are composed of Cu-O 2 sheets in combination with thin atomic mediating layers and thick blocking layers which mediate and intercept interactions between Cu-O 2 sheets, respectively. New possible superconductors can be designed by the stacking of the Cu-O 2 sheets along with the periodic insertion of the mediating layers and different kinds of blocking layers. (orig.)

  6. Simulations Of Transverse Stacking In The NSLS-II Booster

    International Nuclear Information System (INIS)

    Fliller, R. III; Shaftan, T.

    2011-01-01

    The NSLS-II injection system consists of a 200 MeV linac and a 3 GeV booster. The linac needs to deliver 15 nC in 80 - 150 bunches to the booster every minute to achieve current stability goals in the storage ring. This is a very stringent requirement that has not been demonstrated at an operating light source. We have developed a scheme to transversely stack two bunch trains in the NSLS-II booster in order to alleviate the charge requirements on the linac. This scheme has been outlined previously. In this paper we show particle tracking simulations of the tracking scheme. We show simulations of the booster ramp with a stacked beam for a variety of lattice errors and injected beam parameters. In all cases the performance of the proposed stacking method is sufficient to reduce the required charge from the linac. For this reason the injection system of the NSLS-II booster is being designed to include this feature. The NSLS-II injection system consists of a 200 MeV linac and a 3 GeV booster. The injectors must provide 7.5nC in bunch trains 80-150 bunches long every minute for top off operation of the storage ring. Top off then requires that the linac deliver 15nC of charge once losses in the injector chain are taken into consideration. This is a very stringent requirement that has not been demonstrated at an operating light source. For this reason we have developed a method to transversely stack two bunch trains in the booster while maintaining the charge transport efficiency. This stacking scheme has been discussed previously. In this paper we show the simulations of the booster ramp with a single bunch train in the booster. Then we give a brief overview of the stacking scheme. Following, we show the results of stacking two bunch trains in the booster with varying beam emittances and train separations. The behavior of the beam through the ramp is examined showing that it is possible to stack two bunch trains in the booster.

  7. A Simple Semantics and Static Analysis for Stack Inspection

    Directory of Open Access Journals (Sweden)

    Anindya Banerjee

    2013-09-01

    Full Text Available The Java virtual machine and the .NET common language runtime feature an access control mechanism specified operationally in terms of run-time stack inspection. We give a denotational semantics in "eager" form, and show that it is equivalent to the "lazy" semantics using stack inspection. We give a static analysis of safety, i.e., the absence of security errors, that is simpler than previous proposals. We identify several program transformations that can be used to remove run-time checks. We give complete, detailed proofs for safety of the analysis and for the transformations, exploiting compositionality of the eager semantics.

  8. Experimental 1 kW 20 cell PEFC stack

    Energy Technology Data Exchange (ETDEWEB)

    Buechi, F N; Marmy, C A; Scherer, G G [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Ruge, M [Swiss Federal Inst. of Technology (ETH), Zuerich (Switzerland)

    1999-08-01

    A 20-cell PEFC stack was designed and built. Resin impregnated graphite was used as bipolar plate material. The air cooling of the stack was optimized by introducing high surface structures into the open space of the cooling plates. At {eta} (H{sub 2} LHV) = 0.5 a power of 880 W was obtained under conditions of low gas-pressures of 1.15 bar{sub a}. The auxiliary power for process air supply and cooling at 880 W power is less than 7% of the power output, indicating that the described system may be operated at a high efficiency. (author) 5 figs., 2 refs.

  9. Hardware Evaluation of the Horizontal Exercise Fixture with Weight Stack

    Science.gov (United States)

    Newby, Nate; Leach, Mark; Fincke, Renita; Sharp, Carwyn

    2009-01-01

    HEF with weight stack seems to be a very sturdy and reliable exercise device that should function well in a bed rest training setting. A few improvements should be made to both the hardware and software to improve usage efficiency, but largely, this evaluation has demonstrated HEF's robustness. The hardware offers loading to muscles, bones, and joints, potentially sufficient to mitigate the loss of muscle mass and bone mineral density during long-duration bed rest campaigns. With some minor modifications, the HEF with weight stack equipment provides the best currently available means of performing squat, heel raise, prone row, bench press, and hip flexion/extension exercise in a supine orientation.

  10. Interrelation of Entropic Contributors to π -Stacking in Solution

    Science.gov (United States)

    Starodub, Maria A.; Lantushenko, Anastasia O.; Evstigneev, Vladislav P.; Golovchenko, Igor V.; Mykhina, Yulia V.; Savin, Valery V.; Evstigneev, Maxim P.

    2016-08-01

    The recently published most complete set of thermodynamical data on self- and hetero-complexation of aromatic molecules measured under comparable experimental conditions were analyzed. The main aim of this study is to get insights into contribution of various entropic factors to π -stacking in aqueous solution. It was found that the experimental entropy change on π -stacking is determined by counterbalancing effects of two principal factors, i.e., the hydrophobic interaction (positive contribution) and the loss of degrees of freedom (negative contribution) modulated by the electrostatic contribution. Other factors, including the mixing entropy contribution, were shown to be less important.

  11. Implementing cloud storage with OpenStack Swift

    CERN Document Server

    Rajana, Kris; Varma, Sreedhar

    2014-01-01

    This tutorial-based book has a step-by-step approach for each topic, ensuring it is thoroughly covered and easy to follow. If you are an IT administrator who wants to enter the world of cloud storage using OpenStack Swift, then this book is ideal for you. Whether your job is to build, manage, or use OpenStack Swift, this book is an ideal way to move your career ahead. Only basic Linux and server technology skills are expected, to take advantage of this book.

  12. Seismic data enhancement with Common Reflection Surface (CRS) stack method

    Energy Technology Data Exchange (ETDEWEB)

    Baykulov, M.; Brink, H.J.; Gajewski, D.; Yoon, Mi-Kyung [Hamburg Univ. (Germany). Inst. fuer Geophysik

    2008-10-23

    We present the results of partial stacking of prestack seismic reflection data based on the kinematic wavefield attributes computed during the automatic CRS stack. The resulting CRS supergathers are more regularised and have better signal to noise ratio compared to original CMP gathers. The improved data can be used in any conventional processing tool instead of the original data, providing enhanced images of better quality. The CRS supergather method is especially suited for low fold seismic reflection data. Application of the new method to synthetic and real low fold data shows a clear improvement of seismograms as well as time and depth-migrated sections. (orig.)

  13. Harry Stack Sullivan Colloquium: George Herbert Mead and Harry Stack Sullivan: an unfinished synthesis.

    Science.gov (United States)

    Cottrell, L S

    1978-05-01

    HOW DO YOU create a new self? However he may phrase this question, it is a central theoretical and practical concern of the therapist every time he confronts a client who comes to him for help. What are the processes out of which the human self emerges? However he may phrase the question, it is a central concern of the social psychologist. The obvious convergence of interests indicated by these two questions should occasion no surprise among students of Sullivan and Mead. What perhaps should be surprising is that an effective synthesis of their theories has progressed no further than it has to date. My remarks today are based on the conviction that a more adequate psychiatric theory and practice and a more complete social psychological theory and research program depend on such a synthesis. Behavioral scientists concerned with the development of a truly interactionist social psychology are, I believe, generally agreed that George Herbert Mead (1863-1931), philosopher and social psychologist, and Harry Stack Sullivan (1892-1949), psychiatrist and social psychologist, have laid conceptual foundations upon which such a discipline can be erected. Now a vast assortment of activities is tagged as social psychology and its boundaries are, indeed, difficult to draw. However, for our present purposes we can define its focus as the study of the processes and products of inter- and intrapersonal and inter- and intragoup interaction, let the boundaries fall where they will.

  14. Intrinsic and extrinsic magnetic properties of the naturally layered manganites

    International Nuclear Information System (INIS)

    Berger, A.; Mitchell, J. F.; Miller, D. J.; Jiang, J. S.; Bader, S. D.

    1999-01-01

    Structural and magnetic properties of the two-layered Ruddlesden-Popper phase SrO(La 1-x Sr x MnO 3 ) 2 with x = 0.3--0.5 are highlighted. Intrinsic properties of these naturally layered manganites include a colossal magnetoresistance, a composition-dependent magnetic anisotropy, and almost no remanence. Above the Curie temperature there is a non-vanishing extrinsic magnetization attributed to intergrowths (stacking faults in the layered structure). These lattice imperfections consist of additional or missing manganite layers, as observed in transmission electron microscopy. Their role in influencing the properties of the host material is highlighted

  15. Spatial Pyramids and Two-layer Stacking SVM classifiers for Image Categorization: A Comparative Study

    NARCIS (Netherlands)

    Abdullah, Azizi; Veltkamp, Remco C.; Wiering, Marco

    2009-01-01

    Recent research in image recognition has shown that combining multiple descriptors is a very useful way to improve classification performance. Furthermore, the use of spatial pyramids that compute descriptors at multiple spatial resolution levels generally increases the discriminative power of the

  16. Layer-component-based communication stack framework for wireless residential control systems

    DEFF Research Database (Denmark)

    Torbensen, R.; Hjorth, Theis S.

    2011-01-01

    on a common IP infrastructure, regardless of individual wireless technology. Legacy home automation devices are also supported. A prototype has been implemented on multiple resource-constrained hardware platforms, to demonstrate that the solution is both feasible for low-cost devices and portable. It has been...

  17. Layer-component-based communication stack framework for wireless residential control systems

    DEFF Research Database (Denmark)

    Torbensen, Rune; Hjorth, Theis

    2010-01-01

    on a common IP infrastructure, regardless of individual wireless technology. Legacy home automation devices are also supported. A prototype has been implemented on multiple resource-constrained hardware platforms, to demonstrate that the solution is both feasible for low-cost devices and portable. It has been...

  18. Electrical and structural properties of a stacked metal layer contact to n-InP

    International Nuclear Information System (INIS)

    Huang, Wen-Chang; Horng, Chia-Tsung

    2011-01-01

    In this study, we found that the double metal contact structure in Pt/Al/n-InP diodes provides better rectification characteristics than conventional single-metal/n-InP Schottky diodes. The effective barrier height was measured to be 0.67 eV for a 400 deg. C-annealed Pt/Al/n-InP diode sample. The increase in the barrier height is attributed to the formation of Al 2 O 3 at the metal/n-InP contact interface during thermal annealing. The formation of the phase Al 2 O 3 phase was monitored by X-ray diffraction (XRD) analysis. The corresponding element profiles of Al and O were also confirmed at the metal/n-InP contact interface using secondary ion mass spectrum (SIMS) analysis. The lowering of the Schottky barrier height due to the inhomogeneity at the metal/n-InP junction is also discussed on the basis of the TE theory. The distribution of local effective Schottky barrier heights was explained by a model incorporating the existence of double Gaussian barrier heights, which represent the high barrier and low barrier of the full distribution in the temperature ranges of 83-198 and 198-300 K.

  19. Addressing Raman features of individual layers in isotopically labeled Bernal stacked bilayer graphene

    Czech Academy of Sciences Publication Activity Database

    da Costa, Sara; Ek Weis, Johan; Frank, Otakar; Fridrichová, Michaela; Kalbáč, Martin

    2016-01-01

    Roč. 3, č. 2 (2016), 025022 ISSN 2053-1583 R&D Projects: GA MŠk LL1301 Institutional support: RVO:61388955 Keywords : graphene bilayer * Raman spectroscopy * isotope labeling Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 6.937, year: 2016

  20. Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.; Hedhili, Mohamed N.; Wang, H.; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2012-01-01

    measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which

  1. Interaction of photosystem 2-LHC2 supercomplexes in adjacent layers of stacked chloroplast thylakoid membranes

    Czech Academy of Sciences Publication Activity Database

    Bumba, Ladislav; Hušák, M.; Vácha, František

    2004-01-01

    Roč. 42, - (2004), s. 193-199 ISSN 0300-3604 R&D Projects: GA MŠk LN00A141; GA ČR GA206/03/1107 Grant - others:GA-(CZ) FRVŠ1292/2002 Keywords : PS2-LHC2 * electron microscopy analysis Subject RIV: CE - Biochemistry Impact factor: 0.734, year: 2004

  2. Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers.

    Science.gov (United States)

    Ji, Ziheng; Hong, Hao; Zhang, Jin; Zhang, Qi; Huang, Wei; Cao, Ting; Qiao, Ruixi; Liu, Can; Liang, Jing; Jin, Chuanhong; Jiao, Liying; Shi, Kebin; Meng, Sheng; Liu, Kaihui

    2017-12-26

    Van der Waals-coupled two-dimensional (2D) heterostructures have attracted great attention recently due to their high potential in the next-generation photodetectors and solar cells. The understanding of charge-transfer process between adjacent atomic layers is the key to design optimal devices as it directly determines the fundamental response speed and photon-electron conversion efficiency. However, general belief and theoretical studies have shown that the charge transfer behavior depends sensitively on interlayer configurations, which is difficult to control accurately, bringing great uncertainties in device designing. Here we investigate the ultrafast dynamics of interlayer charge transfer in a prototype heterostructure, the MoS 2 /WS 2 bilayer with various stacking configurations, by optical two-color ultrafast pump-probe spectroscopy. Surprisingly, we found that the charge transfer is robust against varying interlayer twist angles and interlayer coupling strength, in time scale of ∼90 fs. Our observation, together with atomic-resolved transmission electron characterization and time-dependent density functional theory simulations, reveals that the robust ultrafast charge transfer is attributed to the heterogeneous interlayer stretching/sliding, which provides additional channels for efficient charge transfer previously unknown. Our results elucidate the origin of transfer rate robustness against interlayer stacking configurations in optical devices based on 2D heterostructures, facilitating their applications in ultrafast and high-efficient optoelectronic and photovoltaic devices in the near future.

  3. Microchannel neural interface manufacture by stacking silicone and metal foil laminae

    Science.gov (United States)

    Lancashire, Henry T.; Vanhoestenberghe, Anne; Pendegrass, Catherine J.; Ajam, Yazan Al; Magee, Elliot; Donaldson, Nick; Blunn, Gordon W.

    2016-06-01

    Objective. Microchannel neural interfaces (MNIs) overcome problems with recording from peripheral nerves by amplifying signals independent of node of Ranvier position. Selective recording and stimulation using an MNI requires good insulation between microchannels and a high electrode density. We propose that stacking microchannel laminae will improve selectivity over single layer MNI designs due to the increase in electrode number and an improvement in microchannel sealing. Approach. This paper describes a manufacturing method for creating MNIs which overcomes limitations on electrode connectivity and microchannel sealing. Laser cut silicone—metal foil laminae were stacked using plasma bonding to create an array of microchannels containing tripolar electrodes. Electrodes were DC etched and electrode impedance and cyclic voltammetry were tested. Main results. MNIs with 100 μm and 200 μm diameter microchannels were manufactured. High electrode density MNIs are achievable with electrodes present in every microchannel. Electrode impedances of 27.2 ± 19.8 kΩ at 1 kHz were achieved. Following two months of implantation in Lewis rat sciatic nerve, micro-fascicles were observed regenerating through the MNI microchannels. Significance. Selective MNIs with the peripheral nervous system may allow upper limb amputees to control prostheses intuitively.

  4. From the components to the stack. Developing and designing 5kW HT-PEFC stacks; Von der Komponente zum Stack. Entwicklung und Auslegung von HT-PEFC-Stacks der 5 kW-Klasse

    Energy Technology Data Exchange (ETDEWEB)

    Bendzulla, Anne

    2010-12-22

    The aim of the present project is to develop a stack design for a 5-kW HTPEFC system. First, the state of the art of potential materials and process designs will be discussed for each component. Then, using this as a basis, three potential stack designs with typical attributes will be developed and assessed in terms of practicality with the aid of a specially derived evaluation method. Two stack designs classified as promising will be discussed in detail, constructed and then characterized using short stack tests. Comparing the stack designs reveals that both designs are fundamentally suitable for application in a HT-PEFC system with on-board supply. However, some of the performance data differ significantly for the two stack designs. The preferred stack design for application in a HT-PEFC system is characterized by robust operating behaviour and reproducible high-level performance data. Moreover, in compact constructions (120 W/l at 60 W/kg), the stack design allows flexible cooling with thermal oil or air, which can be adapted to suit specific applications. Furthermore, a defined temperature gradient can be set during operation, allowing the CO tolerance to be increased by up to 10 mV. The short stack design developed within the scope of the present work therefore represents an ideal basis for developing a 5-kW HT-PEFC system. Topics for further research activities include improving the performance by reducing weight and/or volume, as well as optimizing the heat management. The results achieved within the framework of this work clearly show that HTPEFC stacks have the potential to play a decisive role in increasing efficiency in the future, particularly when combined with an on-board supply system. (orig.) [German] Ziel der vorliegenden Arbeit ist die Entwicklung eines Stackkonzeptes fuer ein 5 kW-HT-PEFC System. Dazu wird zunaechst fuer jede Komponente der Stand der Technik moeglicher Materialien und Prozesskonzepte diskutiert. Darauf aufbauend werden drei

  5. Enhancement of stack ventilation in hot and humid climate using a combination of roof solar collector and vertical stack

    Energy Technology Data Exchange (ETDEWEB)

    Yusoff, Wardah Fatimah Mohammad; Salleh, Elias [Department of Architecture, Faculty of Design and Architecture, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Adam, Nor Mariah [Department of Mechanical and Manufacturing Engineering, Faculty of Engineering, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Sapian, Abdul Razak [Department of Architecture, Kulliyyah of Architecture and Environmental Design, International Islamic University Malaysia, P.O. Box 10, 50728 Kuala Lumpur (Malaysia); Yusof Sulaiman, Mohamad [Solar Energy Research Institute, 3rd Floor, Tun Sri Lanang Library Building, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

    2010-10-15

    In the hot and humid climate, stack ventilation is inefficient due to small temperature difference between the inside and outside of naturally ventilated buildings. Hence, solar induced ventilation is a feasible alternative in enhancing the stack ventilation. This paper aims to investigate the effectiveness of a proposed solar induced ventilation strategy, which combines a roof solar collector and a vertical stack, in enhancing the stack ventilation performance in the hot and humid climate. The methodology selected for the investigation is physical experimental modelling which was carried out in the actual environment. The results are presented and discussed in terms of two performance variables: air temperature and air velocity. The findings indicate that the proposed strategy is able to enhance the stack ventilation, both in semi-clear sky and overcast sky conditions. The highest air temperature difference between the air inside the stack and the ambient air (T{sub i}-T{sub o}) is achieved in the semi-clear sky condition, which is about 9.9 C (45.8 C-35.9 C). Meanwhile, in the overcast sky condition, the highest air temperature difference (T{sub i}-T{sub o}) is 6.2 C (39.3 C-33.1 C). The experimental results also indicate good agreement with the theoretical results for the glass temperature, the air temperature in the roof solar collector's channel and the absorber temperature. The findings also show that wind has significant effect to the induced air velocity by the proposed strategy. (author)

  6. Semiconductor Three-Dimensional Photonic Crystals with Novel Layer-by-Layer Structures

    Directory of Open Access Journals (Sweden)

    Satoshi Iwamoto

    2016-05-01

    Full Text Available Three-dimensional photonic crystals (3D PhCs are a fascinating platform for manipulating photons and controlling their interactions with matter. One widely investigated structure is the layer-by-layer woodpile structure, which possesses a complete photonic bandgap. On the other hand, other types of 3D PhC structures also offer various possibilities for controlling light by utilizing the three dimensional nature of structures. In this article, we discuss our recent research into novel types of layer-by-layer structures, including the experimental demonstration of a 3D PhC nanocavity formed in a <110>-layered diamond structure and the realization of artificial optical activity in rotationally stacked woodpile structures.

  7. Atomic layer-deposited Al–HfO{sub 2}/SiO{sub 2} bi-layers towards 3D charge trapping non-volatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Congedo, Gabriele, E-mail: gabriele.congedo@mdm.imm.cnr.it; Wiemer, Claudia; Lamperti, Alessio; Cianci, Elena; Molle, Alessandro; Volpe, Flavio G.; Spiga, Sabina, E-mail: sabina.spiga@mdm.imm.cnr

    2013-04-30

    A metal/oxide/high-κ dielectric/oxide/silicon (MOHOS) planar charge trapping memory capacitor including SiO{sub 2} as tunnel oxide, Al–HfO{sub 2} as charge trapping layer, SiO{sub 2} as blocking oxide and TaN metal gate was fabricated and characterized as test vehicle in the view of integration into 3D cells. The thin charge trapping layer and blocking oxide were grown by atomic layer deposition, the technique of choice for the implementation of these stacks into 3D structures. The oxide stack shows a good thermal stability for annealing temperature of 900 °C in N{sub 2}, as required for standard complementary metal–oxide–semiconductor processes. MOHOS capacitors can be efficiently programmed and erased under the applied voltages of ± 20 V to ± 12 V. When compared to a benchmark structure including thin Si{sub 3}N{sub 4} as charge trapping layer, the MOHOS cell shows comparable program characteristics, with the further advantage of the equivalent oxide thickness scalability due to the high dielectric constant (κ) value of 32, and an excellent retention even for strong testing conditions. Our results proved that high-κ based oxide structures grown by atomic layer deposition can be of interest for the integration into three dimensionally stacked charge trapping devices. - Highlights: ► Charge trapping device with Al–HfO{sub 2} storage layer is fabricated and characterized. ► Al–HfO{sub 2} and SiO{sub 2} blocking oxides are deposited by atomic layer deposition. ► The oxide stack shows a good thermal stability after annealing at 900 °C. ► The device can be efficiently programmed/erased and retention is excellent. ► The oxide stack could be used for 3D-stacked Flash non-volatile memories.

  8. Dynamic stack testing and HiL simulation

    Energy Technology Data Exchange (ETDEWEB)

    Randolf, G. [GRandalytics, Honolulu, HI (United States)

    2009-07-01

    The applications for fuel cell and stack deployment have changed rapidly over the years, from stationary backup supplies to highly dynamic automotive power systems. As a result, testing must keep up in order to ensure mature products of high quality. A new breed of stack test stations has been designed, based on a newly developed single cell, high dynamic hardware-in-the-loop (HiL) simulator in order to meet the growing demand of realistic fuel cell testing scenarios for aviation and automotive industries. The paper described and illustrated the test station architecture and outline of communication nodes. The paper also described the voltage monitor and presented schematics of voltage monitoring modules. The basic requirements of the architecture that were presented included low latency; flexible communication with simulation targets and other data input/output nodes; scalability to various stack sizes; and, safety and reliability. It was concluded that first tests with the voltage monitoring system not only confirmed the design, high throughput and signal quality, but also suggested another application, namely a stack impedance spectrometer for each individual cell. 1 ref., 3 figs.

  9. The glass sphinx: a massive stacked glass structure

    NARCIS (Netherlands)

    Bos, F.P.; Heijden, van der T.; Schreurs, P.; Bos, F.; Louter, C.; Nijsse, R.; Veer, F.

    The refurbishment of the Meuse river boulevard in Venlo instigated Scheuten Glass to donate a giant-sized, 6 metre high version of the stacked glass statue the Sphinx, which had originally been made as a 80 cm sculpture to commemorate the city's 650th anniversary back in 1993. Many hurdles had to be

  10. The Gulf War on Computer: A Review of "Iraq Stack."

    Science.gov (United States)

    Rattan, Dick

    1993-01-01

    Reviews a HyperCard stack designed for use in schools and at home. Describes the program as primarily a database of information on Iraq, Kuwait, and the Gulf War. Contends that the program is pedagogically weak and of marginal use in the classroom. (CFR)

  11. The Memory Stack: New Technologies Harness Talking for Writing.

    Science.gov (United States)

    Gannon, Maureen T.

    In this paper, an elementary school teacher describes her experiences with the Memory Stack--a HyperCard based tool that can accommodate a voice recording, a graphic image, and a written text on the same card--which she designed to help her second and third grade students integrate their oral language fluency into the process of learning how to…

  12. Multipole stack for the 4 rings of the PS Booster

    CERN Multimedia

    CERN PhotoLab

    1976-01-01

    The PS Booster (originally 800 MeV, now 1.4 GeV) saw first beam in 1972, routine operation began in 1973. The strive for ever higher intensities required the addition of multipoles. Manufacture of 8 stacks of multipoles was launched in 1974, for installation in 1976. For details, see 7511120X.

  13. Seismic fragility of ventilation stack of nuclear power plant

    International Nuclear Information System (INIS)

    Nefedov, S.S.; Yugai, T.Z.; Kalinkin, I.V.; Vizir, P.L.

    2003-01-01

    Fragility study of safety related elements is necessary step in seismic PSA of nuclear power plant (NPP). In present work fragility was analyzed after the example of the ventilation stack of NPP. Ventilation stack, considered in present work, is a separately erected construction with height of 100 m made of cast-in-place reinforced concrete. In accordance with IAEA terminology fragility of element is defined as conditional probability of its failure at given level of seismic loading. Failure of a ventilation stack was considered as development of the plastic hinge in some section of a shaft. Seismic ground acceleration a, which corresponds to failure, could be defined as limit seismic acceleration of ventilation stack [a]. Limit seismic acceleration [a] was considered as random value. Sources of its variation are connected with stochastic nature of factors determining it (properties of construction materials, soils etc.), and also with uncertainties of existing analytical techniques. Random value [a] was assumed to be distributed lognormally. Median m[a] and logarithmically standard deviation β of this distribution were defined by 'scaling method' developed by R.P. Kennedy et al. Using this values fragility curves were plotted for different levels of confidence probability. (author)

  14. Remote control flare stack igniter for combustible gases

    Science.gov (United States)

    Ray, W. L.

    1972-01-01

    Device has been designed and developed for igniting nonrecoverable combustible gases and sustaining combustion of gases evolving from various gas vent stacks. Igniter is superior to existing systems because of simplicity of operation, low cost fabrication, installation, operational and maintainability features, and excellent reliability in all phases of required operations.

  15. Revisiting the Fundamentals and Capabilities of the Stack Compression Test

    DEFF Research Database (Denmark)

    Alves, L.M.; Nielsen, Chris Valentin; Martin, P.A.F.

    2011-01-01

    performance by comparing the flow curves obtained from its utilisation with those determined by means of compressive testing carried out on solid cylinder specimens of the same material. Results show that mechanical testing of materials by means of the stack compression test is capable of meeting...... the increasing demand of accurate and reliable flow curves for sheet metals....

  16. 7. Data Structures: Lists, Queues, Stacks and Arrays

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 2; Issue 6. Algorithms - Data Structures: Lists, Queues, Stacks and Arrays. R K Shyamasundar. Series Article Volume 2 Issue 6 June 1997 pp 39-46. Fulltext. Click here to view fulltext PDF. Permanent link:

  17. A Stack Cache for Real-Time Systems

    DEFF Research Database (Denmark)

    Schoeberl, Martin; Nielsen, Carsten

    2016-01-01

    Real-time systems need time-predictable computing platforms to allowfor static analysis of the worst-case execution time. Caches are important for good performance, but data caches arehard to analyze for the worst-case execution time. Stack allocated data has different properties related...

  18. Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

    Science.gov (United States)

    Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

    2015-12-01

    This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of dielectric stack required for high performance MIM capacitor.

  19. Piezoelectric stack actuator parameter extraction with hysteresis compensation

    DEFF Research Database (Denmark)

    Zsurzsan, Tiberiu-Gabriel; Mangeot, Charles; Andersen, Michael A. E.

    2014-01-01

    The Piezoelectric Actuator Drive (PAD) is a type of rotary motor that transforms the linear motion of piezoelectric stack actuators into a precise rotational motion. The very high stiffness of the actuators employed make this type of motor suited for open-loop control, but the inherent hysteresis...

  20. An Exact Method for the Double TSP with Multiple Stacks

    DEFF Research Database (Denmark)

    Lusby, Richard Martin; Larsen, Jesper; Ehrgott, Matthias

    2010-01-01

    The double travelling salesman problem with multiple stacks (DTSPMS) is a pickup and delivery problem in which all pickups must be completed before any deliveries can be made. The problem originates from a real-life application where a 40 foot container (configured as 3 columns of 11 rows) is used...