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Sample records for stable-efficiency triple-junction a-si

  1. Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell

    Kim, D.Y.; Guijt, E.; Si, F.T.; Santbergen, R.; Holovský, Jakub; Isabella, O.; van Swaaij, R.A.C.M.M.; Zeman, M.

    2015-01-01

    Roč. 141, Oct (2015), s. 148-153 ISSN 0927-0248 R&D Projects: GA MŠk 7E12029 EU Projects: European Commission(XE) 283501 - Fast Track Institutional support: RVO:68378271 Keywords : multi-junction solar cel * a-SiOx:H * high voc * current matching Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

  2. Geodynamical simulation of the RRF triple junction

    Wang, Z.; Wei, D.; Liu, M.; Shi, Y.; Wang, S.

    2017-12-01

    Triple junction is the point at which three plate boundaries meet. Three plates at the triple junction form a complex geological tectonics, which is a natural laboratory to study the interactions of plates. This work studies a special triple junction, the oceanic transform fault intersects the collinear ridges with different-spreading rates, which is free of influence of ridge-transform faults and nearby hotspots. First, we build 3-D numerical model of this triple junction used to calculate the stead-state velocity and temperature fields resulting from advective and conductive heat transfer. We discuss in detail the influence of the velocity and temperature fields of the triple junction from viscosity, spreading rate of the ridge. The two sides of the oceanic transform fault are different sensitivities to the two factors. And, the influence of the velocity mainly occurs within 200km of the triple junction. Then, we modify the model by adding a ridge-transform fault to above model and directly use the velocity structure of the Macquarie triple junction. The simulation results show that the temperature at both sides of the oceanic transform fault decreases gradually from the triple junction, but the temperature difference between the two sides is a constant about 200°. And, there is little effect of upwelling velocity away from the triple junction 100km. The model results are compared with observational data. The heat flux and thermal topography along the oceanic transform fault of this model are consistent with the observed data of the Macquarie triple junction. The earthquakes are strike slip distributed along the oceanic transform fault. Their depths are also consistent with the zone of maximum shear stress. This work can help us to understand the interactions of plates of triple junctions and help us with the foundation for the future study of triple junctions.

  3. Building integration photovoltaic module with reference to Ghana: using triple junction amorphous silicon

    Essah, Emmanuel Adu

    2010-01-01

    This paper assesses the potential for using building integrated photovoltaic (BIPV) \\ud roof shingles made from triple-junction amorphous silicon (3a-Si) for electrification \\ud and as a roofing material in tropical countries, such as Accra, Ghana. A model roof \\ud was constructed using triple-junction amorphous (3a-Si) PV on one section and \\ud conventional roofing tiles on the other. The performance of the PV module and tiles \\ud were measured, over a range of ambient temperatures and solar...

  4. Absolute migration and the evolution of the Rodriguez triple junction ...

    The Rodriguez Triple Junction (RTJ) is a junction connecting three mid-ocean ridges in the Indian Ocean: the Southwest Indian Ridge (SWIR), the Central Indian Ridge (CIR) and the Southeast Indian Ridge (SEIR). The evolution of the RTJ has been studied extensively for the past 10 Ma and the triple junction is believed to ...

  5. Triple junction polymer solar cells for photoelectrochemical water splitting

    Esiner, S.; Eersel, van H.; Wienk, M.M.; Janssen, R.A.J.

    2013-01-01

    A triple junction polymer solar cell in a novel 1 + 2 type configuration provides photoelectrochemical water splitting in its maximum power point at V ˜ 1.70 V with an estimated solar to hydrogen energy conversion efficiency of 3.1%. The triple junction cell consists of a wide bandgap front cell and

  6. Nanostructured thin films for multibandgap silicon triple junction solar cells

    Schropp, R.E.I.; Li, H. B. T.; Franken, R.H.; Rath, J.K.; van der Werf, C.H.M.; Schuttauf, J.A.; Stolk, R.L.

    2009-01-01

    A considerable improvement in performance has been achieved for multibandgap proto-Si/proto-SiGe/nc-Si:H triple junction n–i–p solar cells in which hot-wire chemical vapor deposition (HWCVD) is used to obtain the absorber layers of the bottom and the top cell. To achieve this, optimized Ag/ZnO

  7. Grain boundary and triple junction diffusion in nanocrystalline copper

    Wegner, M., E-mail: m.wegner@uni-muenster.de; Leuthold, J.; Peterlechner, M.; Divinski, S. V., E-mail: divin@uni-muenster.de [Institut für Materialphysik, Universität Münster, Wilhelm-Klemm-Straße 10, D-48149, Münster (Germany); Song, X., E-mail: xysong@bjut.edu.cn [College of Materials Science and Engineering, Beijing University of Technology, 100124 Beijing (China); Wilde, G. [Institut für Materialphysik, Universität Münster, Wilhelm-Klemm-Straße 10, D-48149, Münster (Germany); Institute of Nanochemistry and Nanobiology, School of Environmental and Chemical Engineering, Shanghai University, 200444 Shanghai (China)

    2014-09-07

    Grain boundary and triple junction diffusion in nanocrystalline Cu samples with grain sizes, 〈d〉, of ∼35 and ∼44 nm produced by spark plasma sintering were investigated by the radiotracer method using the {sup 63}Ni isotope. The measured diffusivities, D{sub eff}, are comparable with those determined previously for Ni grain boundary diffusion in well-annealed, high purity, coarse grained, polycrystalline copper, substantiating the absence of a grain size effect on the kinetic properties of grain boundaries in a nanocrystalline material at grain sizes d ≥ 35 nm. Simultaneously, the analysis predicts that if triple junction diffusion of Ni in Cu is enhanced with respect to the corresponding grain boundary diffusion rate, it is still less than 500⋅D{sub gb} within the temperature interval from 420 K to 470 K.

  8. Hydrothermal Exploration at the Chile Triple Junction - ABE's last adventure?

    German, C. R.; Shank, T. M.; Lilley, M. D.; Lupton, J. E.; Blackman, D. K.; Brown, K. M.; Baumberger, T.; Früh-Green, G.; Greene, R.; Saito, M. A.; Sylva, S.; Nakamura, K.; Stanway, J.; Yoerger, D. R.; Levin, L. A.; Thurber, A. R.; Sellanes, J.; Mella, M.; Muñoz, J.; Diaz-Naveas, J. L.; Inspire Science Team

    2010-12-01

    In February and March 2010 we conducted preliminary exploration for hydrothermal plume signals along the East Chile Rise where it intersects the continental margin at the Chile Triple Junction (CTJ). This work was conducted as one component of our larger NOAA-OE funded INSPIRE project (Investigation of South Pacific Reducing Environments) aboard RV Melville cruise MV 1003 (PI: Andrew Thurber, Scripps) with all shiptime funded through an award of the State of California to Andrew Thurber and his co-PI's. Additional support came from the Census of Marine Life (ChEss and CoMarge projects). At sea, we conducted a series of CTD-rosette and ABE autonomous underwater vehicle operations to prospect for and determine the nature of any seafloor venting at, or adjacent to, the point where the the East Chile Rise subducts beneath the continental margin. Evidence from in situ sensing (optical backscatter, Eh) and water column analyses of dissolved CH4, δ3He and TDFe/TDMn concentrations document the presence of two discrete sites of venting, one right at the triple junction and the other a further 10km along axis, north of the Triple Junction, but still within the southernmost segment of the East Chile Rise. From an intercomparison of the abundance of different chemical signals we can intercompare likely characteristics of these differet source sites and also differentiate between them and the high methane concentrations released from cold seep sites further north along the Chile Margin, both with the CTJ region and also at the Concepcion Methane Seep Area (CMSA). This multi-disciplinary and international collaboration - involving scientists from Chile, the USA, Europe and Japan - can serve as an excellent and exciting launchpoint for wide-ranging future investigations of the Chile Triple Junction area - the only place on Earth where an oceanic spreading center is being actively subducted beneath a continent and also the only place on Earth where all known forms of deep

  9. Emission of partial dislocations from triple junctions of grain boundaries in nanocrystalline materials

    Gutkin, M Yu; Ovid'ko, I A; Skiba, N V

    2005-01-01

    A theoretical model is suggested that describes emission of partial Shockley dislocations from triple junctions of grain boundaries (GBs) in deformed nanocrystalline materials. In the framework of the model, triple junctions accumulate dislocations due to GB sliding along adjacent GBs. The dislocation accumulation at triple junctions causes partial Shockley dislocations to be emitted from the dislocated triple junctions and thus accommodates GB sliding. Ranges of parameters (applied stress, grain size, etc) are calculated in which the emission events are energetically favourable in nanocrystalline Al, Cu and Ni. The model accounts for the corresponding experimental data reported in the literature

  10. Reliability of twin-dependent triple junction distributions measured from a section plane

    Hardy, Graden B.; Field, David P.

    2016-01-01

    Numerous studies indicate polycrystalline triple junctions are independent microstructural features with distinct properties from their constituent grain boundaries. Despite the influence of triple junctions on material properties, it is impractical to characterize triple junctions on a large scale using current three-dimensional methods. This work demonstrates the ability to characterize twin-dependent triple junction distributions from a section plane by adopting a grain boundary plane stereology. The technique is validated through simulated distributions and simulated electron back-scatter diffraction (EBSD) data. Measures of validation and convergence are adopted to demonstrate the quantitative reliability of the technique as well as the convergence behavior of twin-dependent triple junction distributions. This technique expands the characterization power of EBSD and prepares the way for characterizing general triple junction distributions from a section plane. - Graphical abstract: The distribution of planes forming a triple junction with a given twin boundary is shown partially in the stereographic projections below from a given projection. The plot on the left shows the ideal/measured distribution and the plot on the right shows the distribution obtained from the stereological method presented here.

  11. Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%

    Sai, Hitoshi; Matsui, Takuya; Koida, Takashi; Matsubara, Koji; Kondo, Michio; Sugiyama, Shuichiro; Katayama, Hirotaka; Takeuchi, Yoshiaki; Yoshida, Isao

    2015-05-01

    We report a high-efficiency triple-junction thin-film silicon solar cell fabricated with the so-called substrate configuration. It was verified whether the design criteria for developing single-junction microcrystalline silicon (μc-Si:H) solar cells are applicable to multijunction solar cells. Furthermore, a notably high short-circuit current density of 32.9 mA/cm2 was achieved in a single-junction μc-Si:H cell fabricated on a periodically textured substrate with a high-mobility front transparent contacting layer. These technologies were also combined into a-Si:H/μc-Si:H/μc-Si:H triple-junction cells, and a world record stabilized efficiency of 13.6% was achieved.

  12. Recovery by triple junction motion in aluminium deformed to ultrahigh strains

    Yu, Tianbo; Hansen, Niels; Huang, Xiaoxu

    2011-01-01

    during plastic deformation and decreases during isochronal and isothermal annealing. Based on TEM and EBSD observations, thermally activated triple junction motion is identified as the key process during the recovery of highly strained aluminium, leading to the removal of thin lamellae with small...... dihedral angles at the ends and structural coarsening. A mechanism for recovery by triple junction motion is proposed, which can underpin the general observation that a lamellar structure formed by plastic deformation during annealing can evolve into an equiaxed structure, preceding further structural...... coarsening and recrystallization. Within this framework, the grain boundary surface tension on triple junctions is discussed based on the structural parameters characterizing the deformed and annealed microstructure....

  13. Modeling Radiation Effects on a Triple Junction Solar Cell using Silvaco ATLAS

    Schiavo, Daniel

    2012-01-01

    In this research, Silvaco ATLAS, an advanced virtual wafer fabrication tool, was used to model the effects of radiation on a triple junction InGaP/GaAs/Ge solar cell. A Silvaco ATLAS model of a triple junction InGaP/GaAs/Ge cell was created by first creating individual models for solar cells composed of each material. Realistic doping levels were used and thicknesses were varied to produce the design parameters and create reasonably efficient solar cell models for testing. After the individua...

  14. Influences of triple junctions on stress-assisted grain boundary motion in nanocrystalline materials

    Aramfard, Mohammad; Deng, Chuang

    2014-01-01

    Stress-assisted grain boundary motion is among the most studied modes of microstructural evolution in crystalline materials. In this study, molecular dynamics simulations were used to systematically investigate the influences of triple junctions on the stress-assisted motion of symmetric tilt grain boundaries in Cu by considering a honeycomb nanocrystalline model. It was found that the grain boundary motion in nanocrystalline models was highly sensitive to the loading mode, and a strong coupling effect which was prevalent in bicrystal models was only observed when simple shear was applied. In addition, the coupling factor extracted from the honeycomb model was found to be larger and more sensitive to temperature change than that from bicrystal models for the same type of grain boundary under the same loading conditions. Furthermore, the triple junctions seemed to exhibit unusual asymmetric pinning effects to the migrating grain boundary and the constraints by the triple junctions and neighboring grains led to remarkable non-linear grain boundary motion in directions both parallel and normal to the applied shear, which was in stark contrast to that observed in bicrystal models. In addition, dislocation nucleation and propagation, which were absent in the bicrystal model, were found to play an important role on shear-induced grain boundary motion when triple junctions were present. In the end, a generalized model for shear-assisted grain boundary motion was proposed based on the findings from this research. (paper)

  15. Wetting and premelting of triple junctions and grain boundaries in the Al-Zn alloys

    Straumal, B.; Kogtenkova, O.; Protasova, S.; Mazilkin, A.; Zieba, P.; Czeppe, T.; Wojewoda-Budka, J.; Faryna, M.

    2008-01-01

    Phase transitions in grain boundaries (GBs) and GB triple junctions (TJs) can change drastically the properties of polycrystals. The GB and TJ wetting phase transition can occur in the two-phase area of the bulk phase diagram where the liquid and solid phases are in equilibrium. The GB and TJ wetting tie-lines can continue in one-phase area of the bulk phase diagram as a GB or TJ solidus line. This line represents the GB or TJ premelting phase transition. The structure and composition of grain boundaries and GB triple junctions were studied by high-resolution electron microscopy and analytical transmission electron microscopy in the Al-5 at.% Zn polycrystals and by differential scanning calorimetry (DSC) in the Al-7.5 at.% Zn polycrystals. Between bulk solidus and GB or TJ solidus the metastable Zn-rich β m -phase was observed in the GB triple junctions of quenched samples. This phase appears neither in the samples annealed above the bulk solidus nor in those annealed below the GB solidus. Zn-content in this β m -phase corresponds to that of bulk liquidus. This is a structural indication that if the melt wets the GBs or TJs, the GB (or TJ) solidus line appears in the bulk phase diagram, and the liquid-like phase exists in GBs and TJs between bulk solidus and GB (or TJ) solidus lines. The structural observation of this phase is also supported by our data obtained by means of DSC

  16. Evidence for a continental unstable triple junction as an alternate model for Vrancea seismicity

    Besutiu, L.

    2002-01-01

    The Vrancea active seismic zone located in the bending area of Romanian Carpathians stands for a long time as a challenge to geoscientists all over the world. Deep seismicity in continental collision circumstances is rather rare and always constraints on dynamics of subduction. The pattern of the intermediate-depth seismicity in the Vrancea region suggests a confined prismatic nearly vertical seismic body. The small size and geometry of the seismic zone have made it difficult to interpret the kinematics of subduction and continental collision in the area. During the years, several models, almost all subduction-related, have more or less successfully tried to explain this phenomenon. The paper represents an attempt to explain the Vrancea intermediate depth seismicity starting from a new concept, as introduced by the plate tectonics theory: the triple junction. A continental unstable triple junction is proposed as an alternate model to explain the unusual seismicity in the Vrancea seismic area. Three tectonic plates / microplates seem to join in the region: East European Plate (EEP), Moesian microplate (MoP), and the Intra-Alpine microplate (IaP). Their edges are geophysically documented and their motion is evidenced. The differentiation in their relative velocities generated an unstable transform-transform-compression triple junction that determined the vertical collapse of the lithospheric segment to which the intermediate seismicity within Vrancea zone is associated. Three major plates' wedges bound the seismic body: Tornquist-Teissyere zone, Peceneaga-Camena fault, and Trans-Getica fault. Temperature accommodation phenomena associated to the sinking lithospheric body into the hotter upper mantle environment (such as convective cells, phase-transform processes, and devolatilization) could be responsible for the earthquakes occurrence. The problem of the missing subduction related volcanism within Vrancea triple junction (VTJ) area is definitely solved in the case

  17. In situ observation of triple junction motion during recovery of heavily deformed aluminum

    Yu, Tianbo; Hughes, Darcy A.; Hansen, Niels

    2015-01-01

    -junctions are pinned by deformation-induced interconnecting and lamellar boundaries, which slow down the recovery process and lead to a stop-go migration pattern. This pinning mechanism stabilizes the deformation microstructure, i.e. the structure is stabilized by balancing the driving and pinning forces controlling......Microstructural evolution during in situ annealing of heavily cold-rolled aluminum has been studied by transmission electron microscopy, confirming that an important recovery mechanism is migration of triple junctions formed by three lamellar boundaries (Y-junctions). The migrating Y...

  18. Geotectonic aspects of the proterozoic triple junction in the center-south part of Goias state

    Valente, C.R.

    1986-01-01

    The scope of this paper is to made up, in a regional synthesis the tectonical framework of intracontinental proterozoic rifts, from the point of view of an evolutive model through plate tectonic mechanism. based upon lithoenvironment and geotectonics. In this context, this analysis take into account the tectonical interpretation and typification of Canastra, Cuiaba, Estrondo and Tocantins Groups. Structurally these geological entities are found to be settled in rifts of triple junction, in the center-south part of Goias State, individualized among the Oriental Plate (Sao Francisco Craton and Goias Central Massif) Occidental Plate (Amazonic Craton) and Meridional Plate (Paramirim Craton and Parana Block). (author)

  19. Application of LBIC measurements for characterisation of triple junction solar cells

    Kwarikunda, N., E-mail: Nicholas.kwarikunda@live.nmmu.ac.za [Nelson Mandela Metropolitan University, P.O. BOX 77000, Port Elizabeth, 6031 (South Africa); Makerere University, P.O. BOX 7062, Kampala (Uganda); Dyk, E.E. van; Vorster, F.J. [Nelson Mandela Metropolitan University, P.O. BOX 77000, Port Elizabeth, 6031 (South Africa); Okullo, W. [Makerere University, P.O. BOX 7062, Kampala (Uganda); Munji, M.K. [Kenyatta University, P.O. BOX 43844-00100, Nairobi (Kenya)

    2014-04-15

    In this study the Light Beam Induced Current (LBIC) imaging technique was used to characterise InGaP/InGaAs/Ge triple junction solar cells. The study focused on the use of monochromatic and solar light as beam probes to obtain photocurrent response maps from which the presence of any current reducing features on the solar cell were identified. Point illuminated current voltage (I–V) curves were obtained simultaneously while LBIC scanning measurements were being made. Curve fitting using an interval division algorithm based on the single diode model was performed to extract basic point device and performance parameters to give a rough indication of the functioning of the triple junction device. Using red and blue lasers as beam probes, reverse voltage breakdown was observed on the I–V curves which could be attributed to the Ge bottom subcell not being fully activated. The extracted parameters obtained when using monochromatic and solar light beam probes showed a large variation, indicating the dependence of I–V parameters on the spectral content of the beam probe.

  20. Application of LBIC measurements for characterisation of triple junction solar cells

    Kwarikunda, N.; Dyk, E.E. van; Vorster, F.J.; Okullo, W.; Munji, M.K.

    2014-01-01

    In this study the Light Beam Induced Current (LBIC) imaging technique was used to characterise InGaP/InGaAs/Ge triple junction solar cells. The study focused on the use of monochromatic and solar light as beam probes to obtain photocurrent response maps from which the presence of any current reducing features on the solar cell were identified. Point illuminated current voltage (I–V) curves were obtained simultaneously while LBIC scanning measurements were being made. Curve fitting using an interval division algorithm based on the single diode model was performed to extract basic point device and performance parameters to give a rough indication of the functioning of the triple junction device. Using red and blue lasers as beam probes, reverse voltage breakdown was observed on the I–V curves which could be attributed to the Ge bottom subcell not being fully activated. The extracted parameters obtained when using monochromatic and solar light beam probes showed a large variation, indicating the dependence of I–V parameters on the spectral content of the beam probe.

  1. Strain mapping near a triple junction in strained Ni-based alloy using EBSD and biaxial nanogauges

    Clair, A. [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 5209 CNRS, Universite de Bourgogne, 9 Avenue Alain Savary, BP 47870, 21078 Dijon Cedex (France); Foucault, M.; Calonne, O. [Areva ANP, Centre Technique Departement Corrosion-Chimie, 30 Bd de l' industrie, BP 181, 71205 Le Creusot (France); Lacroute, Y.; Markey, L.; Salazar, M.; Vignal, V. [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 5209 CNRS, Universite de Bourgogne, 9 Avenue Alain Savary, BP 47870, 21078 Dijon Cedex (France); Finot, E., E-mail: Eric.Finot@u-bourgogne.fr [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 5209 CNRS, Universite de Bourgogne, 9 Avenue Alain Savary, BP 47870, 21078 Dijon Cedex (France)

    2011-05-15

    Research highlights: > Surface strains measured using nanogauge were compared to the texture obtained by EBSD. > Statistics of the principal strain discern the grains according to the Schmid factor. > Strain hotspots were localized near a triple junction of alloy 600 under tensile loading. > Asymetrical profile of the GB strains is a criterion for surface cracking initiation. - Abstract: A key element for analyzing the crack initiation in strained polycrystalline alloys is the local quantification of the surface strain distribution according to the grain texture. Using electron backscattered diffraction, the local microstructure was determined to both localize a triple junction and deduce the local Schmid factors. Kernel average misorientation (KAM) was also used to map the areas of defect concentration. The maximum principal strain and the in-plane shear strain were quantified using the biaxial nanogauge. Distortions of the array of nanodots used as spot markers were analyzed near the triple junction. The crystallographic orientation and the surface strain were then investigated both statistically for each grain and locally at the grain boundaries. The superimposition of microstructure and strain maps allows the high strain gradient (reaching 3-fold the applied strain) to be localized at preferential grain boundaries near the triple junction. The Schmid factors and the KAM were compared to the maximum principal strain and the in-plane shear strain respectively. The polycrystalline deformation was attributable first to the rotation of some grains, followed by the elongation of all grains along their preferential activated slip systems.

  2. 3-D modeling of triple junction solar cells on 2-D gratings with optimized intermediate and back reflectors

    Isabella, O.; Elshinawy, M.A.A.; Solntsev, S.; Zeman, M.

    2012-01-01

    Superstrate thin-film silicon triple-junction solar cells on 2-D gratings were optimized using opto-electrical modeling. Tuning the thickness of intermediate and back reflectors and the band gap of the middle cell resulted in 17% initial efficiency.

  3. Measuring Aseismic Slip through Characteristically Repeating Earthquakes at the Mendocino Triple Junction, Northern California

    Materna, K.; Taira, T.; Burgmann, R.

    2016-12-01

    The Mendocino Triple Junction (MTJ), at the transition point between the San Andreas fault system, the Mendocino Transform Fault, and the Cascadia Subduction Zone, undergoes rapid tectonic deformation and produces more large (M>6.0) earthquakes than any region in California. Most of the active faults of the triple junction are located offshore, making it difficult to characterize both seismic slip and aseismic creep. In this work, we study aseismic creep rates near the MTJ using characteristically repeating earthquakes (CREs) as indicators of creep rate. CREs are generally interpreted as repeated failures of the same seismic patch within an otherwise creeping fault zone; as a consequence, the magnitude and recurrence time of the CREs can be used to determine a fault's creep rate through empirically calibrated scaling relations. Using seismic data from 2010-2016, we identify CREs as recorded by an array of eight 100-Hz PBO borehole seismometers deployed in the Cape Mendocino area. For each event pair with epicenters less than 30 km apart, we compute the cross-spectral coherence of 20 seconds of data starting one second before the P-wave arrival. We then select pairs with high coherence in an appropriate frequency band, which is determined uniquely for each event pair based on event magnitude, station distance, and signal-to-noise ratio. The most similar events (with median coherence above 0.95 at two or more stations) are selected as CREs and then grouped into CRE families, and each family is used to infer a local creep rate. On the Mendocino Transform Fault, we find relatively high creep rates of >5 cm/year that increase closer to the Gorda Ridge. Closer to shore and to the MTJ itself, we find many families of repeaters on and off the transform fault with highly variable creep rates, indicative of the complex deformation that takes place there.

  4. Seismicity and crustal structure at the Mendocino triple junction, Northern California

    Dicke, M.

    1998-12-01

    A high level of seismicity at the Mendocino triple junction in Northern California reflects the complex active tectonics associated with the junction of the Pacific, North America, and Gorda plates. To investigate seismicity patterns and crustal structure, 6193 earthquakes recorded by the Northern California Seismic Network (NCSN) are relocated using a one-dimensional crustal velocity model. A near vertical truncation of the intense seismic activity offshore Cape Mendocino follows the strike of the Mattole Canyon fault and is interpreted to define the Pacific plate boundary. Seismicity along this boundary displays a double seismogenic layer that is attributed to interplate activity with the North America plate and Gorda plate. The interpretation of the shallow seismogenic zone as the North America - Pacific plate boundary implies that the Mendocino triple junction is situated offshore at present. Seismicity patterns and focal mechanisms for events located within the subducting Gorda pl ate are consistent with internal deformation on NE-SW and NW-SE trending rupture planes in response to north-south compression. Seismic sections indicate that the top of the Gorda plate locates at a depth of about 18 Km beneath Cape Mendocino and dips gently east-and southward. Earthquakes that are located in the Wadati-Benioff zone east of 236{sup o}E show a change to an extensional stress regime indicative of a slab pull force. This slab pull force and scattered seismicity within the contractional forearc region of the Cascadia subduction zone suggest that the subducting Gorda plate and the overriding North America plate are strongly coupled. The 1992 Cape Mendocino thrust earthquake is believed to have ruptured a blind thrust fault in the forearc region, suggesting that strain is accumulating that must ultimately be released in a potential M 8+ subduction earthquake.

  5. Transient cracks and triple junctions induced by Cocos-Nazca propagating rift

    Schouten, H.; Smith, D. K.; Zhu, W.; Montesi, L. G.; Mitchell, G. A.; Cann, J. R.

    2009-12-01

    The Galapagos triple junction is a ridge-ridge-ridge triple junction where the Cocos, Nazca, and Pacific plates meet around the Galapagos microplate (GMP). On the Cocos plate, north of the large gore that marks the propagating Cocos-Nazca (C-N) Rift, a 250-km-long and 50-km-wide band of NW-SE-trending cracks crosscuts the N-S-trending abyssal hills of the East Pacific Rise (EPR). These appear as a succession of minor rifts, accommodating some NE-SW extension of EPR-generated seafloor. The rifts successively intersected the EPR in triple junctions at distances of 50-100 km north of the tip of the C-N Rift. We proposed a simple crack interaction model to explain the location of the transient rifts and their junction with the EPR. The model predicts that crack locations are controlled by the stress perturbation along the EPR, induced by the dominant C-N Rift, and scaled by the distance of its tip to the EPR (Schouten et al., 2008). The model also predicts that tensile stresses are symmetric about the C-N Rift and thus, similar cracks should have occurred south of the C-N Rift prior to formation of the GMP about 1 Ma. There were no data at the time to test this prediction. In early 2009 (AT 15-41), we mapped an area on the Nazca plate south of the C-N rift out to 4 Ma. The new bathymetric data confirm the existence of a distinctive pattern of cracks south of the southern C-N gore that mirrors the pattern on the Cocos plate until about 1 Ma, and lends support to the crack interaction model. The envelope of the symmetric cracking pattern indicates that the distance between the C-N Rift tip and the EPR varied between 40 and 65 km during this time (1-4 Ma). The breakdown of the symmetry at 1 Ma accurately dates the onset of a southern plate boundary of the GMP, now Dietz Deep Rift. At present, the southern rift boundary of the GMP joins the EPR with a steep-sided, 80 km long ridge. This ridge releases the stress perturbation otherwise induced along the EPR by elastic

  6. Triple junction orogeny: tectonic evolution of the Pan-African Northern Damara Belt, Namibia

    Lehmann, Jérémie; Saalmann, Kerstin; Naydenov, Kalin V.; Milani, Lorenzo; Charlesworth, Eugene G.; Kinnaird, Judith A.; Frei, Dirk; Kramers, Jan D.; Zwingmann, Horst

    2014-05-01

    Trench-trench-trench triple junctions are generally geometrically and kinematically unstable and therefore can result at the latest stages in complicated collisional orogenic belts. In such geodynamic sites, mechanism and timescale of deformations that accommodate convergence and final assembly of the three colliding continental plates are poorly studied. In western Namibia, Pan-African convergence of three cratonic blocks led to pene-contemporaneous closure of two highly oblique oceanic domains and formation of the triple junction Damara Orogen where the NE-striking Damara Belt abuts to the west against the NNW-striking Kaoko-Gariep Belt. Detailed description of structures and microstructures associated with remote sensing analysis, and dating of individual deformation events by means of K-Ar, Ar-Ar (micas) and U-Pb (zircon) isotopic studies from the Northern Damara Belt provide robust constraints on the tectonic evolution of this palaeo-triple junction orogeny. There, passive margin sequences of the Neoproterozoic ocean were polydeformed and polymetamorphosed to the biotite zone of the greenschist facies to up to granulite facies and anatexis towards the southern migmatitic core of the Central Damara Belt. Subtle relict structures and fold pattern analyses reveal the existence of an early D1 N-S shortening event, tentatively dated between ~635 Ma and ~580 Ma using published data. D1 structures were almost obliterated by pervasive and major D2 E-W coaxial shortening, related to the closure of the Kaoko-Gariep oceanic domain and subsequent formation of the NNW-striking Kaoko-Gariep Belt to the west of the study area. Early, km-scale D1 E-W trending steep folds were refolded during this D2 event, producing either Type I or Type II fold interference patterns visible from space. The D2 E-W convergence could have lasted until ~533 Ma based on published and new U-Pb ages. The final D3 NW-SE convergence in the northernmost Damara Belt produced a NE-striking deformation

  7. Geochemistry of the mantle beneath the Rodriguez Triple Junction and the South-East Indian Ridge

    Michard, A.; Montigny, R.; Schlich, R.

    1986-01-01

    Rare earth element abundances and SR, Nd, Pb isotope compositions have been measured on zero-age dredge samples from the Rodriguez Triple Junction (RTJ) and the South-East Indian Ridge (SEIR). Along the SEIR, the geochemical ''halo'' of the St. Paul hot spot has a half-width of about 400 km and the data may be fairly well accounted for by a binary mixing between an Indian MORB-type component ( 87 Sr/ 86 Sr=0.7028, 143 Nd/ 144 Nd=0.51304, 206 Pb/ 204 Pb=17.8) and the plume type St. Paul component (0.7036, 0.5129 and 18.7 respectively). The alignment of the lead isotope data is particularly good with age of 1.95+-0.13 Ga and Th/U source value of 3.94. One sample dredged on the ridge 60 km southeast of St. Paul bears a definite Kertguelen isotopic signature. The RTJ has distinctive geochemical properties which contrast with those of the adjacent ridge segments. Low 206 Pb/ 204 Pb ratios which plots to the left of the geochron, rather high 208 Pb/ 204 Pb and 87 Sr/ 86 Sr ratios (17.4, 37.4, and 0.7031 respectively) a striking isotopic homogeneity, and variable LRE/HREE fractionation with (LA/S)sub(N) 0.3-0.8 make this triple junction an anomalous site. The geochemical properties of the Indian Ocean basalts have been examined using a three-component mantle model involving (a) a normal MORB-type source though to represent the depleted upper mantle matrix, (b) an OIB-type source of uncertain parentage (recycled oceanic crust), and (c) a component with low μ, Low Sm/Nd, high Rb/Sr (time-averaged value) which is tentatively assigned to ancient hydrothermal and abyssal sediments recycled in the mantle. The high 208 Pb/ 204 Pb and 87 Sr/ 86 Sr ratios typical of the Dupal anomaly are likely due to the widespread distribution of this latter component in the basalt source from this area, including that for MORBs. (orig.)

  8. Geochemistry of the mantle beneath the Rodriguez Triple Junction and the South-East Indian Ridge

    Michard, A.; Montigny, R.; Schlich, R.

    1986-05-01

    Rare earth element abundances and Sr, Nd. Pb isotope compositions have been measured on zero-age dredge samples from the Rodriguez Triple Junction (RTJ) and the South-East Indian Ridge (SEIR), Along the SEIR. the geochemical "halo" of the St. Paul hot spot has a half-width of about 400 km and the data may be fairly well accounted for by a binary mixing between an Indian MORB-type component ( 87Sr/ 86Sr = 0.7028. 143Nd/ 144Nd = 0.51304. 206Pb/ 204Pb = 17.8) and the plume-type St. Paul component (0.7036, 0.5129, and 18.7 respectively). The alignment of the lead isotope data is particularly good with an apparent age of 1.95 ± 0.13 Ga and Th/U source value of 3.94. One sample dredged on the ridge 60 km southeast of St. Paul bears a definite Kerguelen isotopic signature. The RTJ has distinctive geochemical properties which contrast with those of the adjacent ridge segments. Low 206Pb/ 204Pb ratios which plots to the left of the geochron, rather high 208Pb/ 204Pb and 87Sr/ 87Sr ratios (17.4. 37.4, and 0.7031 respectively), a striking isotopic homogeneity, and variable LREE/HREE fractionation with (La/Sm) N, = 0.3-0.8 make this triple junction an anomalous site. The geochemical properties of the Indian Ocean basats have been examined using a three-component mantle model involving (a) a normal MORB-type source though to represent the depleted upper mantle matrix, (b) an OIB-type source of uncertain parentage (recycled oceanic crust?), and (c) a component with low μ. low Sm/Nd. high Rb/Sr (time-averaged value) which is tentatively assigned to ancient hydrothermal and abyssal sediments recycled in the mantle. The high 208Pb/ 204Pb and 87Sr/ 86Sr ratios typical of the Dupal anomaly are likely due to the widespread distribution of this latter component in the basalt source from this area. including that for MORBs.

  9. Effects of Nonuniform Incident Illumination on the Thermal Performance of a Concentrating Triple Junction Solar Cell

    Fahad Al-Amri

    2014-01-01

    Full Text Available A numerical heat transfer model was developed to investigate the temperature of a triple junction solar cell and the thermal characteristics of the airflow in a channel behind the solar cell assembly using nonuniform incident illumination. The effects of nonuniformity parameters, emissivity of the two channel walls, and Reynolds number were studied. The maximum solar cell temperature sharply increased in the presence of nonuniform light profiles, causing a drastic reduction in overall efficiency. This resulted in two possible solutions for solar cells to operate in optimum efficiency level: (i adding new receiver plate with higher surface area or (ii using forced cooling techniques to reduce the solar cell temperature. Thus, surface radiation exchanges inside the duct and Re significantly reduced the maximum solar cell temperature, but a conventional plain channel cooling system was inefficient for cooling the solar cell at medium concentrations when the system was subjected to a nonuniform light distribution. Nonuniformity of the incident light and surface radiation in the duct had negligible effects on the collected thermal energy.

  10. Evidence for triple-junction rifting focussed on local magmatic centres along Parga Chasma, Venus

    Graff, J. R.; Ernst, R. E.; Samson, C.

    2018-05-01

    Parga Chasma is a discontinuous rift system marking the southern boundary of the Beta-Atla-Themis (BAT) region on Venus. Along a 1500 km section of Parga Chasma, detailed mapping of Magellan Synthetic Aperture Radar images has revealed 5 coronae, 11 local rift zones distinct from a regional extension pattern, and 47 graben-fissure systems with radiating (28), linear (12) and circumferential (7) geometries. The magmatic centres of these graben-fissure systems typically coincide with coronae or large volcanoes, although a few lack any central magmatic or tectonic feature (i.e. are cryptic). Some of the magmatic centres are interpreted as the foci of triple-junction rifting that form the 11 local rift zones. Cross-cutting relationships between graben-fissure systems and local rift faults reveal synchronous formation, implying a genetic association. Additionally, cross-cutting relationships show that local rifting events postdate the regional extension along Parga Chasma, further indicating multiple stages of rifting. Evidence for multiple centres of younger magmatism and local rifting against a background of regional extension provides an explanation for the discontinuous morphology of Parga Chasma. Examination of the Atlantic Rift System (prior to ocean opening) on Earth provides an analogue to the rift morphologies observed on Venus.

  11. Performance of High-Efficiency Advanced Triple-Junction Solar Panels for the LILT Mission Dawn

    Fatemi, Navid S.; Sharma, Surya; Buitrago, Oscar; Sharps, Paul R.; Blok, Ron; Kroon, Martin; Jalink, Cees; Harris, Robin; Stella, Paul; Distefano, Sal

    2005-01-01

    NASA's Discovery Mission Dawn is designed to (LILT) conditions. operate within the solar system's Asteroid belt, where the large distance from the sun creates a low-intensity, low-temperature (LILT) condition. To meet the mission power requirements under LlLT conditions, very high-efficiency multi-junction solar cells were selected to power the spacecraft to be built by Orbital Sciences Corporation (OSC) under contract with JPL. Emcore's InGaP/InGaAs/Ge advanced triple-junction (ATJ) solar cells, exhibiting an average air mass zero (AMO) efficiency of greater than 27.6% (one-sun, 28 C), were used to populate the solar panels [1]. The two solar array wings, to be built by Dutch Space, with 5 large- area panels each (total area of 36.4 sq. meters) are projected to produce between 10.3 kWe and 1.3 kWe of end-of life (EOL) power in the 1.0 to 3.0 AU range, respectively. The details of the solar panel design, testing and power analysis are presented.

  12. Self-powered and broadband photodetectors based on graphene/ZnO/silicon triple junctions

    Cheng, Ching-Cheng; Liao, Yu-Ming; Chen, Yang-Fang, E-mail: yfchen@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Zhan, Jun-Yu; Lin, Tai-Yuan [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan (China); Hsieh, Ya-Ping [Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-Yi 621, Taiwan (China)

    2016-08-01

    A self-powered photodetector with ultrahigh sensitivity, fast photoresponse, and wide spectral detectivity covering from 1000 nm to 400 nm based on graphene/ZnO/Si triple junctions has been designed, fabricated, and demonstrated. In this device, graphene serves as a transparent electrode as well as an efficient collection layer for photogenerated carriers due to its excellent tunability of Fermi energy. The ZnO layer acts as an antireflection layer to trap the incident light and enhance the light absorption. Furthermore, the insertion of the ZnO layer in between graphene and Si layers can create build-in electric field at both graphene/ZnO and ZnO/Si interfaces, which can greatly enhance the charge separation of photogenerated electron and hole pairs. As a result, the sensitivity and response time can be significantly improved. It is believed that our methodology for achieving a high-performance self-powered photodetector based on an appropriate design of band alignment and optical parameters can be implemented to many other material systems, which can be used to generate unique optoelectronic devices for practical applications.

  13. Origin of the Degradation of Triple Junction Solar Cells at low Temperature

    Park Seonyong

    2017-01-01

    Full Text Available The degradation of solar cells under irradiation by high energy particles (electrons, protons is the consequence of the introduction of defects trapping minority carriers, which are then not collected by the junction. However, at low temperature, defects located in the space charge region can also induce a tunneling current that results in an apparent decreases of the maximum power. The degradation produced by this tunneling current can depend on temperature, since the concentration of defects created by an irradiation is usually temperature dependent, and can be larger than the degradation associated with carrier recombination. For instance, as we shall see below, an irradiation with 1 MeV electrons at 120 K with a fluence of 3.0 × 1015 /cm2 induces a decrease of less than 10 % in the short-circuit current (Isc and open-circuit voltage (Voc of triple junction (TJ cells, but a decrease of about 40 % in the maximum power (Pmax, which implies that more than half of the total degradation of Pmax should be assigned to another loss mechanism, tunneling in this case. In this work, we demonstrate that this additional degradation must indeed be ascribed to a tunneling process and we investigate the variation of the tunneling current versus fluence induced by electron irradiation in TJ cells, in order to tentatively ascribe the tunneling components to specific sub-cells.

  14. Aseismic Transform Fault Slip at the Mendocino Triple Junction From Characteristically Repeating Earthquakes

    Materna, Kathryn; Taira, Taka'aki; Bürgmann, Roland

    2018-01-01

    The Mendocino Triple Junction (MTJ), at the northern terminus of the San Andreas Fault system, is an actively deforming plate boundary region with poorly constrained estimates of seismic coupling on most offshore fault surfaces. Characteristically repeating earthquakes provide spatial and temporal descriptions of aseismic creep at the MTJ, including on the oceanic transform Mendocino Fault Zone (MFZ) as it subducts beneath North America. Using a dataset of earthquakes from 2008 to 2017, we find that the easternmost segment of the MFZ displays creep during this period at about 65% of the long-term slip rate. We also find creep at slower rates on the shallower strike-slip interface between the Pacific plate and the North American accretionary wedge, as well as on a fault that accommodates Gorda subplate internal deformation. After a nearby M5.7 earthquake in 2015, we observe a possible decrease in aseismic slip on the near-shore MFZ that lasts from 2015 to at least early 2017.

  15. Preliminary temperature Accelerated Life Test (ALT) on III-V commercial concentrator triple-junction solar cells

    Espinet González, Pilar; Algora del Valle, Carlos; Orlando Carrillo, Vincenzo; Nuñez Mendoza, Neftali; Vázquez López, Manuel; Bautista Villares, Jesus; Xiugang, He; Barrutia Poncela, Laura; Rey-Stolle Prado, Ignacio; Araki, Kenji

    2012-01-01

    A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three e...

  16. Nature, source and composition of volcanic ash in sediments from a fracture zone trace of Rodriguez Triple Junction in the Central Indian Basin

    Mascarenhas-Pereira, M.B.L.; Nath, B.N.; Borole, D.V.; Gupta, S.M.

    Volcanic glasses associated with pumice, micro nodules and palagonite like lithic fragments were recovered from a volcanic terrain in a fracture zone defined as Rodriguez Triple Junction trace in the Central Indian Basin. Morphologically, the tephra...

  17. Interactions between strike-slip earthquakes and the subduction interface near the Mendocino Triple Junction

    Gong, Jianhua; McGuire, Jeffrey J.

    2018-01-01

    The interactions between the North American, Pacific, and Gorda plates at the Mendocino Triple Junction (MTJ) create one of the most seismically active regions in North America. The earthquakes rupture all three plate boundaries but also include considerable intraplate seismicity reflecting the strong internal deformation of the Gorda plate. Understanding the stress levels that drive these ruptures and estimating the locking state of the subduction interface are especially important topics for regional earthquake hazard assessment. However owing to the lack of offshore seismic and geodetic instruments, the rupture process of only a few large earthquakes near the MTJ have been studied in detail and the locking state of the subduction interface is not well constrained. In this paper, first, we use the second moments inversion method to study the rupture process of the January 28, 2015 Mw 5.7 earthquake on the Mendocino transform fault that was unusually well recorded by both onshore and offshore strong motion instruments. We estimate the rupture dimension to be approximately 6 km by 3 km corresponding to a stress drop of ∼4 MPa for a crack model. Next we investigate the frictional state of the subduction interface by simulating the afterslip that would be expected there as a result of the stress changes from the 2015 earthquake and a 2010 Mw 6.5 intraplate earthquake within the subducted Gorda plate. We simulate afterslip scenarios for a range of depths of the downdip end of the locked zone defined as the transition to velocity strengthening friction and calculate the corresponding surface deformation expected at onshore GPS monuments. We can rule out a very shallow downdip limit owing to the lack of a detectable signal at onshore GPS stations following the 2010 earthquake. Our simulations indicate that the locking depth on the slab surface is at least 14 km, which suggests that the next M8 earthquake rupture will likely reach the coastline and strong shaking

  18. New geodetic measurements in central Afar constraining the Arabia-Somalia-Nubia triple junction kinematics

    Doubre, C.; Deprez, A.; Masson, F.; Socquet, A.; Lewi, E.; Grandin, R.; Calais, E.; Wright, T. J.; Bendick, R. O.; Pagli, C.; Peltzer, G.; de Chabalier, J. B.; Ibrahim Ahmed, S.

    2014-12-01

    Abhe, suggesting that this area represents the most probable location for the triple junction.

  19. Food-web complexity across hydrothermal vents on the Azores triple junction

    Portail, Marie; Brandily, Christophe; Cathalot, Cécile; Colaço, Ana; Gélinas, Yves; Husson, Bérengère; Sarradin, Pierre-Marie; Sarrazin, Jozée

    2018-01-01

    The assessment and comparison of food webs across various hydrothermal vent sites can enhance our understanding of ecological processes involved in the structure and function of biodiversity. The Menez Gwen, Lucky Strike and Rainbow vent fields are located on the Azores triple junction of the Mid-Atlantic Ridge. These fields have distinct depths (from 850 to 2320 m) and geological contexts (basaltic and ultramafic), but share similar faunal assemblages defined by the presence of foundation species that include Bathymodiolus azoricus, alvinocarid shrimp and gastropods. We compared the food webs of 13 faunal assemblages at these three sites using carbon and nitrogen stable isotope analyses (SIA). Results showed that photosynthesis-derived organic matter is a negligible basal source for vent food webs, at all depths. The contribution of methanotrophy versus autotrophy based on Calvin-Benson-Bassham (CBB) or reductive tricarboxylic acid (rTCA) cycles varied between and within vent fields according to the concentrations of reduced compounds (e.g. CH4, H2S). Species that were common to vent fields showed high trophic flexibility, suggesting weak trophic links to the metabolism of chemosynthetic primary producers. At the community level, a comparison of SIA-derived metrics between mussel assemblages from two vent fields (Menez Gwen & Lucky Strike) showed that the functional structure of food webs was highly similar in terms of basal niche diversification, functional specialization and redundancy. Coupling SIA to functional trait approaches included more variability within the analyses, but the functional structures were still highly comparable. These results suggest that despite variable environmental conditions (physico-chemical factors and basal sources) and faunal community structure, functional complexity remained relatively constant among mussel assemblages. This functional similarity may be favoured by the propensity of species to adapt to fluid variations and

  20. Three-dimensional crustal structure for the Mendocino Triple Junction region from local earthquake travel times

    Verdonck, D.; Zandt, G. [Lawrence Livermore National Lab., CA (United States)

    1994-12-10

    The large-scale, three-dimensional geometry of the Mendocino Triple Junction at Cape Mendocino, California, was investigated by inverting nearly 19,000 P wave arrival times from over 1400 local earthquakes to estimate the three-dimensional velocity structure and hypocentral parameters. A velocity grid 175 km (N-S) by 125 km (E-W) centered near Garberville, California, was constructed with 25 km horizontal and 5 km vertical node spacing. The model was well resolved near Cape Mendocino, where the earthquakes and stations are concentrated. At about 40.6{degrees}N latitude a high-velocity gradient between 6.5 and 7.5 km/s dips gently to the south and east from about 15 km depth near the coast. Relocated hypocenters concentrate below this high gradient which the authors interpret as the oceanic crust of the subducted Gorda Plate. Therefore the depth to the top of the Gorda Plate near Cape Mendocino is interpreted to be {approximately} 15 km. The Gorda Plate appears intact and dipping {approximately}8{degrees} eastward due to subduction and flexing downward 6{degrees}-12{degrees} to the south. Both hypocenters and velocity structure suggest that the southern edge of the plate intersects the coastline at 40.3{degrees}N latitude and maintains a linear trend 15{degrees} south of east to at least 123{degrees}W longitude. The top of a large low-velocity region at 20-30 km depth extends about 50 km N-S and 75 km E-W (roughly between Garberville and Covelo) and is located above and south of the southern edge of the Gorda Plate. The authors interpret this low velocity area to be locally thickened crust (8-10 km) due to either local compressional forces associated with north-south compression caused by the northward impingement of the rigid Pacific Plate or by underthrusting of the base of the accretionary subduction complex at the southern terminous of the Cascadia Subduction Zone. 66 refs., 11 figs., 3 tabs.

  1. Results from an International Measurement Round Robin of III-V Triple Junction Solar Cells under Air Mass Zero

    Jenkins, Phillip; Scheiman, Chris; Goodbody, Chris; Baur, Carsten; Sharps, Paul; Imaizumi, Mitsuru; Yoo, Henry; Sahlstrom, Ted; Walters, Robert; Lorentzen, Justin; hide

    2006-01-01

    This paper reports the results of an international measurement round robin of monolithic, triple-junction, GaInP/GaAs/Ge space solar cells. Eight laboratories representing national labs, solar cell vendors and space solar cell consumers, measured cells using in-house reference cells and compared those results to measurements made where each lab used the same set of reference cells. The results show that most of the discrepancy between laboratories is likely due to the quality of the standard cells rather than the measurement system or solar simulator used.

  2. Laser induced non-monotonic degradation in short-circuit current of triple-junction solar cells

    Dou, Peng-Cheng; Feng, Guo-Bin; Zhang, Jian-Min; Song, Ming-Ying; Zhang, Zhen; Li, Yun-Peng; Shi, Yu-Bin

    2018-06-01

    In order to study the continuous wave (CW) laser radiation effects and mechanism of GaInP/GaAs/Ge triple-junction solar cells (TJSCs), 1-on-1 mode irradiation experiments were carried out. It was found that the post-irradiation short circuit current (ISC) of the TJSCs initially decreased and then increased with increasing of irradiation laser power intensity. To explain this phenomenon, a theoretical model had been established and then verified by post-damage tests and equivalent circuit simulations. Conclusion was drawn that laser induced alterations in the surface reflection and shunt resistance were the main causes for the observed non-monotonic decrease in the ISC of the TJSCs.

  3. In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

    Harris, R.D.; Imaizumi, M.; Walters, R.J.; Lorentzen, J.R.; Messenger, S.R.; Tischler, J.G.; Ohshima, T.; Sato, S.; Sharps, P.R.; Fatemi, N.S.

    2008-01-01

    The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

  4. The effect of the optical system on the electrical performance of III–V concentrator triple junction solar cells

    Schultz, R.D., E-mail: S206029578@nmmu.ac.za; Dyk, E.E. van; Vorster, F.J.

    2016-01-01

    High Concentrated Photovoltaic (H-CPV) technologies utilize relatively inexpensive reflective and refractive optical components for concentration to achieve high energy yield. The electrical performance of H-CPV systems is, however, dependent on the properties and configuration of the optical components. The focus of this paper is to summarize the effect of the properties of the optical system on the electrical performance of a Concentrator Triple Junction (CTJ) InGaP/InGaAs/Ge cell. Utilizing carefully designed experiments that include spectral measurements and intensity profiles in the optical plane of the CTJ cell, the influence of photon absorption, Fresnel lens properties and chromatic aberration created by the optical system on the electrical performance of a CTJ cell is shown. From the results obtained, it is concluded that good characterization and understanding of the optical system’s properties may add to improved design of future multi-junction devices.

  5. Triple Junction InGaP/GaAs/Ge Solar Cell Optimization: The Design Parameters for a 36.2% Efficient Space Cell Using Silvaco ATLAS Modeling & Simulation

    Tsutagawa, Michael H.; Michael, Sherif

    2009-01-01

    This paper presents the design parameters for a triple junction InGaP/GaAs/Ge space solar cell with a simulated maximum efficiency of 36.28% using Silvaco ATLAS Virtual Wafer Fabrication tool. Design parameters include the layer material, doping concentration, and thicknesses.

  6. Pleistocene vertical motions of the Costa Rican outer forearc from subducting topography and a migrating fracture zone triple junction

    Edwards, Joel H.; Kluesner, Jared W.; Silver, Eli A.; Bangs, Nathan L.

    2018-01-01

    Understanding the links between subducting slabs and upper-plate deformation is a longstanding goal in the field of tectonics. New 3D seismic sequence stratigraphy, mapped within the Costa Rica Seismogenesis Project (CRISP) seismic-reflection volume offshore southern Costa Rica, spatiotemporally constrains several Pleistocene outer forearc processes and provides clearer connections to subducting plate dynamics. Three significant shelf and/or slope erosional events at ca. 2.5–2.3 Ma, 1.95–1.78 Ma, and 1.78–1.19 Ma, each with notable differences in spatial extent, volume removed, and subsequent margin response, caused abrupt shifts in sedimentation patterns and rates. These shifts, coupled with observed deformation, suggest three primary mechanisms for Pleistocene shelf and slope vertical motions: (1) regional subaerial erosion and rapid subsidence linked to the southeastward Panama Fracture Zone triple-junction migration, with associated abrupt bathymetric variations and plate kinematic changes; (2) transient, kilometer-scale uplift and subsidence due to inferred subducting plate topography; and (3) progressive outer wedge shortening accommodated by landward- and seaward-dipping thrust faults and fold development due to the impinging Cocos Ridge. Furthermore, we find that the present-day wedge geometry (to within ∼3 km along strike) has been maintained through the Pleistocene, in contrast to modeled landward margin retreat. We also observe that deformation, i.e., extension and shortening, is decoupled from net margin subsidence. Our findings do not require basal erosion, and they suggest that the vertical motions of the Costa Rican outer forearc are not the result of a particular continuous process, but rather are a summation of plate to plate changes (e.g., passage of a fracture zone triple junction) and episodic events (e.g., subducting plate topography).

  7. Assessment of Late Quaternary strain partitioning in the Afar Triple Junction: Dobe and Hanle grabens, Ethiopia and Djibouti

    Polun, S. G.; Stockman, M. B.; Hickcox, K.; Horrell, D.; Tesfaye, S.; Gomez, F. G.

    2015-12-01

    As the only subaerial exposure of a ridge - ridge - ridge triple junction, the Afar region of Ethiopia and Djibouti offers a rare opportunity to assess strain partitioning within this type of triple junction. Here, the plate boundaries do not link discretely, but rather the East African rift meets the Red Sea and Gulf of Aden rifts in a zone of diffuse normal faulting characterized by a lack of magmatic activity, referred to as the central Afar. An initial assessment of Late Quaternary strain partitioning is based on faulted landforms in the Dobe - Hanle graben system in Ethiopia and Djibouti. These two extensional basins are connected by an imbricated accommodation zone. Several fault scarps occur within terraces formed during the last highstand of Lake Dobe, around 5 ka - they provide a means of calibrating a numerical model of fault scarp degradation. Additional timing constraints will be provided by pending exposure ages. The spreading rates of both grabens are equivalent, however in Dobe graben, extension is partitioned 2:1 between northern, south dipping faults and the southern, north dipping fault. Extension in Hanle graben is primarily focused on the north dipping Hanle fault. On the north margin of Dobe graben, the boundary fault bifurcates, where the basin-bordering fault displays a significantly higher modeled uplift rate than the more distal fault, suggesting a basinward propagation of faulting. On the southern Dobe fault, surveyed fault scarps have ages ranging from 30 - 5 ka with uplift rates of 0.71, 0.47, and 0.68 mm/yr, suggesting no secular variation in slip rates from the late Plestocene through the Holocene. These rates are converted into horizontal stretching estimates, which are compared with regional strain estimated from velocities of relatively sparse GPS data.

  8. Magmatic tectonic effects of high thermal regime at the site of active ridge subduction: the Chile Triple Junction model

    Lagabrielle, Yves; Guivel, Christèle; Maury, René C.; Bourgois, Jacques; Fourcade, Serge; Martin, Hervé

    2000-11-01

    High thermal gradients are expected to be found at sites of subduction of very young oceanic lithosphere and more particularly at ridge-trench-trench (RTT) triple junctions, where active oceanic spreading ridges enter a subduction zone. Active tectonics, associated with the emplacement of two main types of volcanic products, (1) MORB-type magmas, and (2) calc-alkaline acidic magmas in the forearc, also characterize these plate junction domains. In this context, MORB-type magmas are generally thought to derive from the buried active spreading center subducted at shallow depths, whereas the origin of calc-alkaline acidic magmas is more problematic. One of the best constrained examples of ridge-trench interaction is the Chile Triple Junction (CTJ) located southwest of the South American plate at 46°12'S, where the active Chile spreading center enters the subduction zone. In this area, there is a clear correlation between the emplacement of magmatic products and the migration of the triple junction along the active margin. The CTJ lava population is bimodal, with mafic to intermediate lavas (48-56% SiO 2) and acidic lavas ranging from dacites to rhyolites (66-73% SiO 2). Previous models have shown that partial melting of oceanic crust plus 10-20% of sediments, leaving an amphibole- and plagioclase-rich residue, is the only process that may account for the genesis of acidic magmas. Due to special plate geometry in the CTJ area, a given section of the margin may be successively affected by the passage of several ridge segments. We emphasize that repeated passages will lead to the development of very high thermal gradients allowing melting of rocks of oceanic origin at temperatures of 800-900°C and low pressures, corresponding to depths of 10-20 km depth only. In addition, the structure of the CTJ forearc domain is dominated by horizontal displacements and tilting of crustal blocks along a network of strike-slip faults. The occurrence of such a deformed domain implies

  9. Monitoring the performance of single and triple junction amorphous silicon modules in two building integrated photovoltaic (BIPV) installations

    Eke, Rustu; Senturk, Ali

    2013-01-01

    Highlights: • The first and the largest BIPV of Turkey were installed. • Single and triple junction amorphous module performances in BIPV applications are analyzed. • Total generated electricity of the BIPV system is measured as 103,702 kW h for 36 months of operation. • Annual energy rating is calculated as 856 kW h/kWp for a non-optimally oriented plant. • The PR of the system is found 0.74 and 0.81 for PV systems on towers and facade respectively. - Abstract: Mugla is located in south west Turkey at 37°13′N latitude and 28°36′E longitude with yearly sum of horizontal global irradiation exceeding 1700 kW h per square meter. Mugla has a Mediterranean Climate which is characterized by long, hot and dry summers with cool and wet winters. Mugla Sıtkı Kocman University is the largest “PV Park” in Turkey consisting of 100 kWp installed Photovoltaic Power Systems (PVPSs) with different PV applications. The 40 kWp building integrated photovoltaic (BIPV) system which is the first and largest in Turkey was installed on the façade and the two towers of the “Staff Block of the Education Faculty’s Building” of Mugla Sıtkı Kocman University in February 2008. Triple junction amorphous silicon photovoltaic modules are used on the façade and single junction amorphous silicon PV modules are used on the East and West towers of the building. In this paper, the 40 kWp BIPV system in Mugla, Turkey is presented, and its performance is evaluated. Energy rating (kW h/kWp energy yield), efficiencies and performance ratios of both applications are also evaluated for 36 months of operation. Daily, monthly and seasonal variations in performance parameters of the BIPV system in relation to solar data and meteorological parameters and outdoor performance of two reference modules (representing the modules on façade and towers) in a summer and a winter day are also investigated

  10. Magnetotelluric 2D Modelling Provides Insight on the Structural Characteristics of the Guadalajara (Mexico) Triple Junction Domains

    Arboleda Zapata, M. D. J., Sr.; Arzate-Flores, J.; Guevara Betancourt, R. E., Sr.

    2017-12-01

    The Jalisco Block is a continental microplate produced by the extension along three large structures: the Tepic-Zacoalco rift (TZR), the Colima rift (CR) and the Chapala rift that converge in a triple junction 50 km southwest of Guadalajara, Mexico, with orientation NW-SE, N-S, and E-W respectively. The present study focuses on investigating the deep structure of the north Colima and eastern Zacoalco grabens close to the Guadalajara triple junction (GTJ). This is a first study of its type that provide insight on the grabens structures and crustal characteristics underneath. We measured along two magnetotellurics (MT) profiles that cut perpendicularly the TZR (profile ZAC), and the northern CR (profile SAY) comprising a total of 24 broad band MT soundings. The ZAC profile has 11 stations and has a NE orientation, and the SAY profile has 14 station aligned E-W. Standard processing and editing procedures were completed, and distortion analysis was applied to the data set in order to define the dimensionality and electric strike of the separated profiles. Static shift was corrected using geology information to distinguish the different types of soundings and later averaging for those soundings located over the same lithology. The Bahr dimensionality parameters showed that the medium is mainly 3D for the SAY profile and 2D for the ZAC profile; furthermore, the regional geoelectric strike azimuth calculated with Bahr methodology were -4° and -48° respectively, with good concordance with the main surface structures. The tipper analysis permitted validated these results, as the real induction vectors were nearly perpendicular to main fault structures. All soundings were rotated to the respective regional strike and a 2D simultaneous inversion of the transverse electric (TE) mode, the transvers magnetic (TM) mode and the Tipper was completed. The RMS fitting error yield 3.2% for ZAC profile and 3.7% for SAY profile. Both profiles show a shallow conductive zone at north of

  11. Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

    Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte-Huxel, Henning [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Rienaecker, Michael [Institute for Solar Energy Research Hamelin (ISFH); Merkle, Agnes [Institute for Solar Energy Research Hamelin (ISFH); Kajari-Schroeder, S. [Institute for Solar Energy Research Hamelin (ISFH); Niepelt, Raphael [Institute for Solar Energy Research Hamelin (ISFH); Schmidt, Jan [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Brendel, Rolf [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Peibst, Robby [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover

    2017-10-02

    Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.

  12. Volcano-tectonic evolution of a linear volcanic ridge (Pico-Faial Ridge, Azores Triple Junction) assessed by paleomagnetic studies

    Silva, Pedro F.; Henry, Bernard; Marques, Fernando O.; Hildenbrand, Anthony; Lopes, Ana; Madureira, Pedro; Madeira, José; Nunes, João C.; Roxerová, Zuzana

    2018-02-01

    The morphology of volcanic oceanic islands results from the interplay between constructive and destructive processes, and tectonics. In this study, the analysis of the paleomagnetic directions obtained on well-dated volcanic rocks is used as a tool to assess tilting related to tectonics and large-scale volcano instability along the Pico-Faial linear volcanic ridge (Azores Triple Junction, Central-North Atlantic). For this purpose, 530 specimens from 46 lava flows and one dyke from Pico and Faial islands were submitted to thermal and alternating magnetic fields demagnetizations. Detailed rock magnetic analyses, including thermomagnetic analyses and classical high magnetic field experiments revealed titanomagnetites with different Ti-content as the primary magnetic carrier, capable of recording stable remanent magnetizations. In both islands, the paleomagnetic analysis yields a Characteristic Remanent Magnetization, which presents island mean direction with normal and reversed polarities in agreement with the islands location and the age of the studied lava flows, indicating a primary thermo-remanent magnetization. Field observations and paleomagnetic data show that lava flows were emplaced on pre-existing slopes and were later affected by significant tilting. In Faial Island, magmatic inflation and normal faults making up an island-scale graben, can be responsible for the tilting. In Pico Island, inflation related to magma intrusion during flow emplacement can be at the origin of the inferred tilting, whereas gradual downward movement of the SE flank by slumping processes appears mostly translational.

  13. Quantifying strain partitioning between magmatic and amagmatic portions of the Afar triple junction of Ethiopia and Djibouti through use of contemporary and late Quaternary extension rates

    Polun, S. G.; Hickcox, K.; Tesfaye, S.; Gomez, F. G.

    2016-12-01

    The central Afar rift in Ethiopia and Djibouti is a zone of accommodation between the onshore propagations of the Gulf of Aden and Red Sea oceanic spreading centers forming part of the Afar triple junction that divides the Arabia, Nubia, and Somalia plates. While extension in the onshore magmatic propagators is accommodated through magmatism and associated faulting, extension in the central Afar is accommodated solely by large and small faults. The contributions of these major faults to the overall strain budget can be well characterized, but smaller faults are more difficult to quantify. Sparse GPS data covering the region constrain the total extension budget across the diffuse triple junction zone. Late Quaternary slip rates for major faults in Hanle, Dobe, Guma, and Immino grabens were estimated using the quantitative analysis of faulted landforms. This forms a nearly complete transect from the onshore propagation of the Red Sea rift in Tendaho graben and the onshore propagation of the Gulf of Aden rift at Manda Inakir. Field surveying was accomplished using a combination of electronic distance measurer profiling and low altitude aerial surveying. Age constraints are provided from the Holocene lacustrine history or through terrestrial cosmogenic nuclide (TCN) dating of the faulted geomorphic surface. Along this transect, late Quaternary slip rates of major faults appear to accommodate 25% of the total horizontal stretching rate between the southern margin of Tendaho graben and the Red Sea coast, as determined from published GPS velocities. This constrains the proportion of total extension between Nubia and Arabia that is accommodated through major faulting in the central Afar, compared to the magmatism and associated faulting of the magmatic propagators elsewhere in the triple junction. Along the transect, individual fault slip rates decrease from the southeast to the northwest, suggesting a `Crank-Arm' model may be more applicable to explain the regional

  14. A new MATLAB/Simulink model of triple-junction solar cell and MPPT based on artificial neural networks for photovoltaic energy systems

    Hegazy Rezk

    2015-09-01

    Full Text Available This paper presents a new Matlab/Simulink model of a PV module and a maximum power point tracking (MPPT system for high efficiency InGaP/InGaAs/Ge triple-junction solar cell. The proposed technique is based on Artificial Neural Network. The equivalent circuit model of the triple-junction solar cell includes the parameters of each sub-cell. It is also include the effect of the temperature variations on the energy gap of each sub-cell as well as the diode reverse saturation currents. The implementation of a PV model is based on the triple-junction solar cell in the form of masked block in Matlab/Simulink software package that has a user-friendly icon and dialog. It is fast and accurate technique to follow the maximum power point. The simulation results of the proposed MPPT technique are compared with Perturb and Observe MPPT technique. The output power and energy of the proposed technique are higher than that of the Perturb and Observe MPPT technique. The proposed technique increases the output energy per day for a one PV module from 3.37 kW h to 3.75 kW h, i.e. a percentage of 11.28%.

  15. Mesoscopic nonequilibrium thermodynamics of solid surfaces and interfaces with triple junction singularities under the capillary and electromigration forces in anisotropic three-dimensional space.

    Ogurtani, Tarik Omer

    2006-04-14

    A theory of irreversible thermodynamics of curved surfaces and interfaces with triple junction singularities is elaborated to give a full consideration of the effects of the specific surface Gibbs free energy anisotropy in addition to the diffusional anisotropy, on the morphological evolution of surfaces and interfaces in crystalline solids. To entangle this intricate problem, the internal entropy production associated with arbitrary virtual displacements of triple junction and ordinary points on the interfacial layers, embedded in a multicomponent, multiphase, anisotropic composite continuum system, is formulated by adapting a mesoscopic description of the orientation dependence of the chemical potentials in terms of the rotational degree of freedom of individual microelements. The rate of local internal entropy production resulted generalized forces and conjugated fluxes not only for the grain boundary triple junction transversal and longitudinal movements, but also for the ordinary points. The natural combination of the mesoscopic approach coupled with the rigorous theory of irreversible thermodynamics developed previously by the global entropy production hypothesis yields a well-posed, nonlinear, moving free-boundary value problem in two-dimensional (2D) space, as a unified theory. The results obtained for 2D space are generalized into the three-dimensional continuum by utilizing the invariant properties of the vector operators in connection with the descriptions of curved surfaces in differential geometry. This mathematical model after normalization and scaling procedures may be easily adapted for computer simulation studies without introducing any additional phenomenological system parameters (the generalized mobilities), other than the enlarged concept of the surface stiffness.

  16. Tectonics and geology of spreading ridge subduction at the Chile Triple Junction: a synthesis of results from Leg 141 of the Ocean Drilling Program

    Behrmann, J.H.; Lewis, S.D.; Cande, S.C.

    1994-01-01

    An active oceanic spreading ridge is being subducted beneath the South American continent at the Chile Triple Junction. This process has played a major part in the evolution of most of the continental margins that border the Pacific Ocean basin. A combination of high resolution swath bathymetric maps, seismic reflection profiles and drillhole and core data from five sites drilled during Ocean Drilling Program (ODP) Leg 141 provide important data that define the tectonic, structural and stratigraphic effects of this modern example of spreading ridge subduction. A change from subduction accretion to subduction erosion occurs along-strike of the South American forearc. This change is prominently expressed by normal faulting, forearc subsidence, oversteepening of topographic slopes and intensive sedimentary mass wasting, overprinted on older signatures of sediment accretion, overthrusting and uplift processes in the forearc. Data from drill sites north of the triple junction (Sites 859-861) show that after an important phase of forearc building in the early to late Pliocene, subduction accretion had ceased in the late Pliocene. Since that time sediment on the downgoing oceanic Nazca plate has been subducted. Site 863 was drilled into the forearc in the immediate vicinity of the triple junction above the subducted spreading ridge axis. Here, thick and intensely folded and faulted trench slope sediments of Pleistocene age are currently involved in the frontal deformation of the forearc. Early faults with thrust and reverse kinematics are overprinted by later normal faults. The Chile Triple Junction is also the site of apparent ophiolite emplacement into the South American forearc. Drilling at Site 862 on the Taitao Ridge revealed an offshore volcanic sequence of Plio-Pleistocene age associated with the Taitao Fracture Zone, adjacent to exposures of the Pliocene-aged Taitao ophiolite onshore. Despite the large-scale loss of material from the forearc at the triple junction

  17. Middle Miocene paleotemperature anomalies within the Franciscan Complex of northern California: Thermo-tectonic responses near the Mendocino triple junction

    Underwood, M.B.; Shelton, K.L.; McLaughlin, R.J.; Laughland, M.M.; Solomon, R.M.

    1999-01-01

    This study documents three localities in the Franciscan accretionary complex of northern California, now adjacent to the San Andreas fault, that were overprinted thermally between 13.9 and 12.2 Ma: Point Delgada-Shelter Cove (King Range terrane); Bolinas Ridge (San Bruno Mountain terrane); and Mount San Bruno (San Bruno Mountain terrane). Vein assemblages of quartz, carbonate, sulfide minerals, and adularia were precipitated locally in highly fractured wall rock. Vitrinite reflectance (Rm) values and illite crystallinity decrease away from the zones of metalliferous veins, where peak wall-rock temperatures, as determined from Rm, were as high as 315??C. The ??18O values of quartz and calcite indicate that two separate types of fluid contributed to vein precipitation. Higher ??18O fluids produced widespread quartz and calcite veins that are typical of the regional paleothermal regime. The widespread veins are by-products of heat conduction and diffuse fluid flow during zeolite and prehnite-pumpellyite-grade metamorphism, and we interpret their paleofluids to have evolved through dehydration reactions and/or extensive isotopic exchange with accreted Franciscan rocks. Lower ??18O fluids, in contrast, evolved from relatively high temperature exchange between seawater (or meteoric water) and basaltic and/or sedimentary host rocks; focused flow of those fluids resulted in local deposition of the metalliferous veins. Heat sources for the three paleothermal anomalies remain uncertain and may have been unrelated to one another. Higher temperature metalliferous fluids in the King Range terrane could have advected either from a site of ridge-trench interaction north of the Mendocino fracture zone or from a "slabless window" in the wake of the northward migrating Mendocino triple junction. A separate paradox involves the amount of Quaternary offset of Franciscan basement rocks near Shelter Cove by on-land faults that some regard as the main active trace of the San Andreas

  18. Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

    Yang, Wen-xian; Dai, Pan; Ji, Lian; Tan, Ming; Wu, Yuan-yuan [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Uchida, Shiro [Department of Mechanical Science and Engineering Faculty of Engineering, Chiba Institute of Technology, 2-17-1, Tsudanuma, Narashino, Chiba 275-0016 (Japan); Lu, Shu-long, E-mail: sllu2008@sinano.ac.cn [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

    2016-12-15

    Highlights: • High quality InGaAsP material with a bandgap of 1.0 eV was grown by MBE. • Room-temperature wafer-bonded GaInP/GaAs/InGaAsP SCs were fabricated. • An efficiency of 30.3% of wafer-bonded triple-junction SCs was obtained. - Abstract: We report on the fabrication of III–V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

  19. Electroluminescence analysis of injection-enhanced annealing of electron irradiation-induced defects in GaInP top cells for triple-junction solar cells

    Yi, Tiancheng; Lu, Ming; Yang, Kui; Xiao, Pengfei; Wang, Rong, E-mail: wangr@bnu.edu.cn

    2014-09-15

    Direct injection-enhanced annealing of defects in a GaInP top cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.8 MeV electrons with a fluence of 1 × 10{sup 15} cm{sup −2} has been observed and analyzed using electroluminescence (EL) spectra. Minority-carrier injection under forward bias conditions is observed to enhance defect annealing in the GaInP top cell, and recovery of the EL intensity of the GaInP top cell was observed even at room temperature. Moreover, the injection-enhanced defect annealing rates obey a simple Arrhenius law; therefore, the annealing activation energy was determined and is equal to 0.51 eV. Lastly, the H2 defect has been identified as the primary non-radiative recombination center based on a comparison of the annealing activation energies.

  20. Simulation and fabrication of SiO{sub 2}/graded-index TiO{sub 2} antireflection coating for triple-junction GaAs solar cells by using the hybrid deposition process

    Liu, Jheng-Jie; Ho, Wen-Jeng, E-mail: wjho@ntut.edu.tw; Lee, Yi-Yu; Chang, Chia-Ming

    2014-11-03

    GaAs-based multi-junction solar cells (MJ-SCs) provide a wide solar-energy absorption-band (300–1800 nm), but designing and fabricating a broadband antireflection coating (ARC) are challenging. Because MJ-SCs are typically in a series that connects each subcell, the total output current is limited by the subcell that generates the smallest photocurrent. Thus, the ARC for MJ-SCs must be designed not only to obtain broadband absorption but also to minimize light reflection at the wavelength band of the current-limited cell. This study proposes a broadband SiO{sub 2}/graded-index TiO{sub 2} ARC for improving the current-limited subcell performance by using a hybrid deposition (e-beam evaporation and spin-on coating). A bottom TiO{sub 2} layer and a top SiO{sub 2} layer were deposited through e-beam evaporation, but the middle TiO{sub 2} layer was deposited using spin-on coating because the refractive index values of the TiO{sub 2} films could be tuned by applying the spin speed. Therefore, the graded-index TiO{sub 2} layers were easily obtained using a hybrid deposition method. In addition, a suitable reflectance spectrum of an ARC structure for a middle-cell current-limited triple-junction (3-J) GaAs solar cell was simulated using commercial optical software. The photovoltaic current–voltage and external quantum efficiency (EQE) were measured and compared. The resulting improvements of a short-circuit current of 32.4% and conversion efficiency of 31.8% were attributed to an enhanced EQE of 32.97% as well as a low broadband reflectance exhibited on the middle cell of the 3-J GaAs solar cell with a SiO{sub 2}/graded-index TiO{sub 2} ARC. - Highlights: • A broadband SiO{sub 2}/graded-index TiO{sub 2} ARC obtained by a hybrid deposition • A suitable triple-layer ARC was simulated by a commercial optical software. • Optical reflection, photovoltaic I–V, and EQE of 3-J GaAs solar cell were characterized. • An increased J{sub sc} of 32.4% and an increased

  1. Continuous roll-to-roll a-Si photovoltaic manufacturing technology. Annual subcontractor report, 1 April 1992--31 March 1993

    Izu, M. [Energy Conversion Devices, Inc., Troy, MI (United States)

    1993-12-01

    This report describes work done under a 3-year program to advance ECD`s roll-to-roll, triple-junction photovoltaic manufacturing technologies, to reduce the module production costs, to increase the stabilized module performance, and to expand commercial capacity utilizing ECD technology. The specific 3-year goal is to develop advanced large-scale manufacturing technology incorporating ECD`s earlier research advances with the capability of producing modules with stable 11% efficiency at a cost of approximately $1.00 per peak watt. Accomplishments during Phase 1 included: (1) ECD successfully incorporated a high-performance Ag/metal-oxide back-reflector system into its continuous roll-to-roll commercial production operation. (2) High-quality a-Si-Ge narrow-band-gap solar cells were incorporated into the manufacturing. (3) ECD demonstrated the continuous roll-to-roll production of high-efficiency, triple-junction, two-band-gap solar cells consistently and uniformly throughout a 762-m (2500-ft) run with high yield. (4) ECD achieved 11.1% initial sub-cell efficiency of triple-junction, two-band-gap a-Si alloy solar cells in the production line. (5) The world`s first 0.37-m{sup 2} (4-ft{sup 2}) PV modules were produced utilizing triple-junction spectrum-splitting solar cells manufactured in the production line. (6) As a result of process optimization to reduce the layer thickness and to improve the gas utilization, ECD achieved a 77% material cost reduction for germane and 58% reduction for disilane. Additionally, ECD developed a new low-cost module that saves approximately 30% in assembly material costs.

  2. Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

    Cappelletti, M A; Cédola, A P; Peltzer y Blancá, E L

    2014-01-01

    The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 10 15 cm −2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the one-dimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. (paper)

  3. Southeast Indian Ridge Between the Rodriguez Triple Junction and the Amsterdam and Saint-Paul Islands: Detailed Kinematics for the Past 20 m.y.

    Royer, Jean-Yves; Schlich, Roland

    1988-11-01

    The Southeast Indian Ridge has the fastest spreading rates of the three mid-oceanic ridge systems of the Indian Ocean and has recorded the movements of Antarctica relative to Australia and India since the Late Cretaceous. New bathymetric and magnetic data have been collected by the R/V Marion Dufresne (1983) and the R/V Jean Charcot (1984), on the western part of this ridge, between the Rodriguez Triple Junction (25.5°S, 70.0°E) and the Amsterdam and Saint-Paul islands (38°S, 78°E). These data bring additional information on the seafloor magnetic pattern produced by the Southeast Indian Ridge during the past 20 m.y. A new tectonic chart is proposed for the area around the Amsterdam and Saint-Paul islands. We have mapped 17 isochrons ranging from anomalies 6 to 1 (20.5-0.7 Ma) based on the compilation of all the data available in this area (25 cruises). Their distribution clearly shows asymmetric features. Reconstructions at short time intervals show that stage poles of rotation describe oscillatory movements along a direction parallel to the Southeast Indian Ridge axis. Observed changes in spreading rates and the stability of the spreading directions since the Miocene support this result.

  4. Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

    Leem, Jung Woo; Yu, Jae Su; Kim, Jong Nam; Noh, Sam Kyu

    2014-01-01

    We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J sc . The maximum J sc , which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J sc value of 13.92 mA/cm 2 is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

  5. Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

    Leem, Jung Woo; Yu, Jae Su [Kyung Hee University, Yongin (Korea, Republic of); Kim, Jong Nam [Pukyung National University, Pusan (Korea, Republic of); Noh, Sam Kyu [Korea Research Institute of Standards and Science, Daejon (Korea, Republic of)

    2014-05-15

    We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J{sub sc}. The maximum J{sub sc}, which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J{sub sc} value of 13.92 mA/cm{sup 2} is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

  6. A differential spectral responsivity measurement system constructed for determining of the spectral responsivity of a single- and triple-junction photovoltaic cells

    Sametoglu, Ferhat; Celikel, Oguz; Witt, Florian

    2017-10-01

    A differential spectral responsivity (DSR) measurement system has been designed and constructed at National Metrology Institute of Turkey (TUBITAK UME) to determine the spectral responsivity (SR) of a single- or a multi-junction photovoltaic device (solar cell). The DSR setup contains a broad band light bias source composed of a constructed Solar Simulator based on a 1000 W Xe-arc lamp owning a AM-1.5 filter and 250 W quartz-tungsten-halogen lamp, a designed and constructed LED-based Bias Light Sources, a DC voltage bias circuit, and a probe beam optical power tracking and correction circuit controlled with an ADuC847 microcontroller card together with an embedded C based software, designed and constructed in TUBITAK UME under this project. By using the constructed DSR measurement system, the SR calibration of solar cells, the monolitic triple-junction solar cell GaInP/GaInAs/Ge and its corresponding component cells have been performed within the EURAMET Joint Research Project SolCell.

  7. A theoretical analysis of the impact of atmospheric parameters on the spectral, electrical and thermal performance of a concentrating III–V triple-junction solar cell

    Theristis, Marios; Fernández, Eduardo F.; Stark, Cameron; O’Donovan, Tadhg S.

    2016-01-01

    Highlights: • An integrated spectral dependent electrical–thermal model has been developed. • The effect of atmospheric parameters on system’s performance is evaluated. • The HCPV cooling requirements under “hot & dry” conditions are quantified. • Case studies show the impact of heat transfer coefficient on annual energy yield. • The integrated modelling allows the system’s optimisation. - Abstract: The spectral sensitivity of a concentrating triple-junction (3J) solar cell has been investigated. The atmospheric parameters such as the air mass (AM), aerosol optical depth (AOD) and precipitable water (PW) change the distribution of the solar spectrum in a way that the spectral, electrical and thermal performance of a 3J solar cell is affected. In this paper, the influence of the spectral changes on the performance of each subcell and whole cell has been analysed. It has been shown that increasing the AM and AOD have a negative impact on the spectral and electrical performance of 3J solar cells while increasing the PW has a positive effect, although, to a lesser degree. A three-dimensional finite element analysis model is used to quantify the effect of each atmospheric parameter on the thermal performance for a range of heat transfer coefficients from the back-plate to the ambient air and also ambient temperature. It is shown that a heat transfer coefficient greater than 1300 W/(m"2 K) is required to keep the solar cell under 100 °C at all times. In order to get a more realistic assessment and also to investigate the effect of heat transfer coefficient on the annual energy yield, the methodology is applied for four US locations using data from a typical meteorological year (TMY3).

  8. 40Ar/39Ar thermo-chronology and lithospheric mechanisms. Methodological and applied approach: the Kunlun range (Asia) and the Afar triple junction area (East Africa)

    Mock, C.

    1998-01-01

    A 40 Ar/ 39 Ar thermo-chronological study has been carried out for two contrasted geodynamic settings: - the Eastern Kunlun range (Northern Tibet), in order to characterize the lithospheric deformation mechanisms related to the India-Asia collision; - the Afar triple junction area (East Africa), in order to constrain the timing of mantle plume-related basement uplift in Ethiopia and Yemen, which will indicate whether rifting was active or passive. In the Kunlun, the cooling event (9-15 deg.C/Ma) outlined at 30 Ma for the granitoids (Bt = 128-138 Ma; Kf = 102-147 Ma) reflects a denudation event (0.2-0.3 km/Ma), related to ramp stacking and normal faulting with associated uplift. This unroofing period is coeval with the great Asian strike-slip faults. This suggests that 30 Ma ago, the India-Asia collision was accommodated by lateral extrusion along great strike-slip faults, which might have led to local crustal thickening because of the formation of anticlines from major thrusts 'branching' from the Kunlun fault. In the Afar area the Panafrican basement (granitoids = 462-678 Ma;metamorphic rocks 505-750 Ma) has undergone a reheating event during the Cenozoic; its temperature is estimated around 138-177 deg.C over the last 50 Ma for a depth of 2 km, implying a thermal gradient of 69-88 deg./km. This reheating event results from both heat conduction, related to the mantle plume. and heat advection. because of magma transfer. However, it was not possible to define the timing of the mantle plume-related basement uplift. This study outlines the important thermal effect of continental flood basalts on the crust and suggests that the 40 Ar/ 39 Ar thermo-chronology does not allow to characterize the denudation of the lithosphere for an extension-type geodynamic setting. Finally, some of the results suggest that diffusion in the laboratory and in nature may be different. 40 Ar/ 39 Ar thermo-chronological analysis thus might be tricky, especially in investigating geologic

  9. Subcell Debye behavior analysis of order–disorder effects in triple-junction InGaP-based photovoltaic solar cells

    Hsiao, Jui-Ju; Chen, Hung-Ing; Huang, Yi-Jen; Wang, Jen-Cheng; Lu, Bing-Yuh; Wu, Ya-Fen; Nee, Tzer-En

    2015-01-01

    Analysis was made of the Subcell Debye behavior of the order–disorder effects in triple-junction InGaP-based photovoltaic solar cells fabricated by a metal organic vapor phase epitaxy (MOVPE) system with careful adjustment of the growth conditions. The order–disorder configurations of the InGaP subcells were investigated after post-annealing treatment at various temperatures in a nitrogen atmosphere. Temperature-dependent photoluminescence (PL) measurements over a broad temperature range provided insight into the roles of the thermophysical phenomena connected with the ordering and disordering in the InGaP alloys. The thermally-related spectroscopic observations associated with the ordering effects on the photon–phonon interactions were confirmed by the McCumber–Sturge theory. The variations of both the full width at half-maximum (FWHM) and shift in the peak of PL with temperature were analyzed. According to the width-related PL observations the effective photon–phonon coupling coefficient and the Debye temperature were 0.53 meV and 424 K, respectively; according to shift-related PL observations of the as-grown sample they were 0.3247 eV and 430 K, respectively, for the width-related PL observation they were 0.29 meV and 421 K; and from the shift-related PL observations for the as-grown ordered samples they were 0.3142 eV and 425 K, respectively, implying that the spontaneously disordered InGaP heterostructures met the demand for improvement of photovoltaic devices. Both the effective photon–phonon coupling coefficient and the Debye temperatures were characterized as functions of the annealing temperature. The Debye temperatures obtained for the disordered and ordered top subcells were consistent with the universal Gruneisen–Bloch relation. - Highlights: • Analysis was made of the Subcell Debye behavior in photovoltaic solar cells. • The order–disorder configurations of the InGaP subcells were investigated. • The Debye temperatures were

  10. Subcell Debye behavior analysis of order–disorder effects in triple-junction InGaP-based photovoltaic solar cells

    Hsiao, Jui-Ju; Chen, Hung-Ing; Huang, Yi-Jen; Wang, Jen-Cheng [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan ROC (China); Lu, Bing-Yuh [Department of Electronic Engineering, Tungnan University, No.152, Sec. 3, Beishen Road, Shenkeng District, New Taipei City, Taiwan ROC (China); Wu, Ya-Fen [Department of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, Taishan District, New Taipei City, Taiwan ROC (China); Nee, Tzer-En, E-mail: neete@mail.cgu.edu.tw [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan ROC (China)

    2015-12-15

    Analysis was made of the Subcell Debye behavior of the order–disorder effects in triple-junction InGaP-based photovoltaic solar cells fabricated by a metal organic vapor phase epitaxy (MOVPE) system with careful adjustment of the growth conditions. The order–disorder configurations of the InGaP subcells were investigated after post-annealing treatment at various temperatures in a nitrogen atmosphere. Temperature-dependent photoluminescence (PL) measurements over a broad temperature range provided insight into the roles of the thermophysical phenomena connected with the ordering and disordering in the InGaP alloys. The thermally-related spectroscopic observations associated with the ordering effects on the photon–phonon interactions were confirmed by the McCumber–Sturge theory. The variations of both the full width at half-maximum (FWHM) and shift in the peak of PL with temperature were analyzed. According to the width-related PL observations the effective photon–phonon coupling coefficient and the Debye temperature were 0.53 meV and 424 K, respectively; according to shift-related PL observations of the as-grown sample they were 0.3247 eV and 430 K, respectively, for the width-related PL observation they were 0.29 meV and 421 K; and from the shift-related PL observations for the as-grown ordered samples they were 0.3142 eV and 425 K, respectively, implying that the spontaneously disordered InGaP heterostructures met the demand for improvement of photovoltaic devices. Both the effective photon–phonon coupling coefficient and the Debye temperatures were characterized as functions of the annealing temperature. The Debye temperatures obtained for the disordered and ordered top subcells were consistent with the universal Gruneisen–Bloch relation. - Highlights: • Analysis was made of the Subcell Debye behavior in photovoltaic solar cells. • The order–disorder configurations of the InGaP subcells were investigated. • The Debye temperatures were

  11. High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001

    Compaan, A. D.; Deng, X.; Bohn, R. G.

    2003-10-01

    This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Si materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.

  12. Analysis of bias voltage dependent spectral response in Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell

    Sogabe, Tomah; Ogura, Akio; Okada, Yoshitaka

    2014-01-01

    Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V bias ) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V bias for Ga 0.51 In 0.49 P/Ga 0.99 In 0.01 As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V bias measurements. The profile of SR−V bias curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell

  13. Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

    Sogabe, Tomah, E-mail: Sogabe@mbe.rcast.u-tokyo.ac.jp; Ogura, Akio; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo 4-6-1 Komaba, Meguro-ku, Tokyo 153-8504 (Japan)

    2014-02-21

    Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V{sub bias} measurements. The profile of SR−V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

  14. Efficiency and Throughput Advances in Continuous Roll-to-Roll a-Si Alloy PV Manufacturing Technology: Final Subcontract Report, 22 June 1998 -- 5 October 2001

    Ellison, T.

    2002-04-01

    This report describes a roll-to-roll triple-junction amorphous silicon alloy PV manufacturing technology developed and commercialized by Energy Conversion Devices (ECD) and United Solar Systems. This low material cost, roll-to-roll production technology has the economies of scale needed to meet the cost goals necessary for widespread use of PV. ECD has developed and built six generations of a-Si production equipment, including the present 5 MW United Solar manufacturing plant in Troy, Michigan. ECD is now designing and building a new 25-MW facility, also in Michigan. United Solar holds the world's record for amorphous silicon PV conversion efficiency, and manufactures and markets a wide range of PV products, including flexible portable modules, power modules, and innovative building-integrated PV (BIPV) shingle and metal-roofing modules that take advantage of this lightweight, rugged, and flexible PV technology. All of United Solar's power and BIPV products are approved by Underwriters Laboratories and carry a 10-year warranty. In this PVMaT 5A subcontract, ECD and United Solar are addressing issues to reduce the cost and improve the manufacturing technology for the ECD/United Solar PV module manufacturing process. ECD and United Solar identified five technology development areas that would reduce the module manufacturing cost in the present 5-MW production facility, and also be applicable to future larger-scale manufacturing facilities.

  15. Color-tunable and stable-efficiency white organic light-emitting diode fabricated with fluorescent-phosphorescent emission layers

    Yang, Su-Hua; Shih, Po-Jen; Wu, Wen-Jie; Huang, Yi-Hua

    2013-01-01

    White organic light emitting diodes (OLEDs) were fabricated for color-tunable lighting applications. Fluorescent and phosphorescent hybrid emission layers (EMLs) were used to enhance the luminance and stability of the devices, which have blue-EML/CBP interlayer/green-EML/phosphorescent-sensitized-EML/red-EML structures. The influence of the composition and structure of the EMLs on the electroluminescence properties of the devices were investigated from the viewpoint of their emission spectra. The possible exciton harvesting, diffusion, transport, and annihilation processes occurring in the EMLs were also evaluated. A maximum luminance intensity of 7400 cd/m 2 and a highly stable current efficiency of 3.2 cd/A were obtained. Good color tunability was achieved for the white OLEDs; the chromatic coordinates linearly shifted from pure white (0.300, 0.398) to cold white (0.261, 0.367) when the applied voltage was varied from 10 to 14 V. -- Highlights: • Exciton harvesting, diffusion, transport, and annihilation processes were evaluated. • The electroluminescence properties were investigated from the viewpoint of the emission spectra. • Good color tunability and stable-efficiency were achieved for the white OLEDs

  16. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  17. High-Rate Fabrication of a-Si-Based Thin-Film Solar Cells Using Large-Area VHF PECVD Processes

    Deng, Xunming [University of Toledo; Fan, Qi Hua

    2011-12-31

    The University of Toledo (UT), working in concert with it’s a-Si-based PV industry partner Xunlight Corporation (Xunlight), has conducted a comprehensive study to develop a large-area (3ft x 3ft) VHF PECVD system for high rate uniform fabrication of silicon absorber layers, and the large-area VHF PECVD processes to achieve high performance a-Si/a-SiGe or a-Si/nc-Si tandem junction solar cells during the period of July 1, 2008 to Dec. 31, 2011, under DOE Award No. DE-FG36-08GO18073. The project had two primary goals: (i) to develop and improve a large area (3 ft × 3 ft) VHF PECVD system for high rate fabrication of > = 8 Å/s a-Si and >= 20 Å/s nc-Si or 4 Å/s a-SiGe absorber layers with high uniformity in film thicknesses and in material structures. (ii) to develop and optimize the large-area VHF PECVD processes to achieve high-performance a-Si/nc-Si or a-Si/a-SiGe tandem-junction solar cells with >= 10% stable efficiency. Our work has met the goals and is summarized in “Accomplishments versus goals and objectives”.

  18. Multilayer Antireflection Coating for Triple Junction Solar Cells

    Zhan Feng; Wang Hai-Li; He Ji-Fang; Wang Juan; Huang She-Song; Ni Hi-Qiao; Niu Zhi-Chuan

    2011-01-01

    According to the theory of optical films, we simulate the reflectivity of antireflection coatings (ARCs) for solar cells of Ga 0.5 In 0.5 P/GaAs/Ge based on an optical transfer matrix. In order to provide sufficient consideration of the refractive index dispersion effect of multilayer ARCs, we use multi-dimensional matrix data for reliable simulation. After the reflection curves are obtained, the effective average reflectance R e is introduced to optimize the film system by minimizing R e . Optimization of single layer (Al 2 O 3 ), double layer (MgF 2 /ZnS) and triple layer (MgF 2 /Al 2 O 3 /ZnS) ARCs is realized by using this method for space and terrestrial applications. Effects of these ARCs are compared after optimization. These theoretical parameters can be used to guide experiments. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Electrospun a-Si using Liquid Silane/Polymer Inks

    Doug Schulz

    2010-12-09

    Amorphous silicon nanowires (a-SiNWs) were prepared by electrospinning cyclohexasilane (Si{sub 6}H{sub 12}) admixed with polymethylmethacrylate (PMMA) in toluene. Raman spectroscopy characterization of these wires (d {approx} 50-2000 nm) shows 350 C treatment yields a-SiNWs. Porous a-SiNWs are obtained using a volatile polymer.

  20. Orientations of recrystallization nuclei developed in columnar-grained Ni at triple junctions

    Xu, C.L.; Huang, S.; Zhang, Yubin

    2015-01-01

    A high purity columnar grained nickel sample with a strong <001> fiber texture was cold rolled to 50% reduction in thickness, followed by annealing at different temperatures. Optical microscopy was used to depict the grain boundaries prior to annealing and to detect nuclei formed on grain boundar...

  1. Modeling of Operating Temperature Performance of Triple Junction Solar Cells Using Silvaco's ATLAS

    Sanders, Michael H

    2007-01-01

    .... Building upon prior thesis work at the Naval Postgraduate School, this thesis utilizes Silvaco's ATLAS software as a tool to simulate the performance of a typical InGaP/GaAs/Ge multi-junction solar...

  2. Geochemical constraints on the hydrothermal origin of ferromanganese encrustations from the Rodriguez Triple Junction, Indian Ocean

    Nath, B.N.; Pluger, W.L.; Roelandts, I.

    stream_size 13 stream_content_type text/plain stream_name Geol_Soc_Spl_Pub_(London)_1997_119_199.pdf.txt stream_source_info Geol_Soc_Spl_Pub_(London)_1997_119_199.pdf.txt Content-Encoding ISO-8859-1 Content-Type text...

  3. Abundance and diversity of chaetognaths from the Rodriguez Triple Junction area of the Indian Ocean

    Nair, V.R.; Jayalakshmy, K.V.; Terazaki, M.

    species were respectively 60, 33 and 7 percent to the total population. Species diversity was more in the upper 500 m water column than the 150 m stratum due to the mixing of mesopelagic species in the former. Statistical grouping of stations indicated...

  4. Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

    Aho Arto

    2017-01-01

    Full Text Available Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

  5. High performance a-Si solar cells and new fabrication methods for a-Si solar cells

    Nakano, S.; Kuwano, Y.; Ohnishi, M.

    1986-12-01

    The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method. As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained. For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.

  6. Continuous roll-to-roll a-Si photovoltaic manufacturing technology. Final subcontract report, 1 April 1992--30 September 1995

    Izu, M. [Energy Conversion Devices, Inc., Troy, MI (US)

    1996-02-01

    ECD has made important progress in the development of materials, device designs, and manufacturing processes required for the continued advancement of practical photovoltaic technology{sub 1-23}. ECD has pioneered and continues further development of two key proprietary technologies, with significant potential for achieving the cost goals necessary for widespread growth of the photovoltaic market: (1) a low cost, roll-to- roll continuous substrate thin-film solar cell manufacturing process; (2) a high efficiency, monolithic, multiple-junction, spectrum- splitting thin-film amorphous silicon alloy device structure. Commercial production of multiple-junction a-Si alloy modules has been underway at ECD and its joint venture company for a number of years using ECD's proprietary roll-to-roll process and numerous advantages of this technology have been demonstrated. These include relatively low semiconductor material cost, relatively low process cost, a light-weight, rugged and flexible substrate that results in lowered installed costs of PV systems, and environmentally safe materials. Nevertheless, the manufacturing cost per watt of PV modules from our current plant remains high. In order to achieve high stable efficiency and low manufacturing cost, ECD has, at ECD's expense, engineered and constructed a 2 MW production line and a 200 kW pilot line, incorporating earlier ECD research advances in device efficiency through the use of multi-junction spectrum-splitting and high performance back-reflector cell design. Under this subcontract six tasks were directed towards achieving this goal. They are: Task I: Optimization of back-reflector system; Task II: Optimization of the Si-Ge narrow bandgap solar cells; Task III: Optimization of the stable efficiency of photovoltaic modules; Task IV: Demonstration of serpentine web continuous roll-to-roll deposition technology; Task V: Material cost reductions; and Task VI: Improving the module assembly process.

  7. Low-temperature Au/a-Si wafer bonding

    Jing, Errong; Xiong, Bin; Wang, Yuelin

    2011-01-01

    The Si/SiO 2 /Ti/Au–Au/Ti/a-Si/SiO 2 /Si bonding structure, which can also be used for the bonding of non-silicon material, was investigated for the first time in this paper. The bond quality test showed that the bond yield, bond repeatability and average shear strength are higher for this bonding structure. The interfacial microstructure analysis indicated that the Au-induced crystallization of the amorphous silicon process leads to big Si grains extending across the bond interface and Au filling the other regions of the bond interface, which result into a strong and void-free bond interface. In addition, the Au-induced crystallization reaction leads to a change in the IR images of the bond interface. Therefore, the IR microscope can be used to evaluate and compare the different bond strengths qualitatively. Furthermore, in order to verify the superiority of the bonding structure, the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si (i.e. no Ti/Au layer on the a-Si surface) and Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structures (i.e. Au thermocompression bonding) were also investigated. For the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si bonding structure, the poor bond quality is due to the native oxide layer on the a-Si surface, and for the Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structure, the poor bond quality is caused by the wafer surface roughness which prevents intimate contact and limits the interdiffusion at the bond interface.

  8. Structure and optical properties of aSiAl and aSiAlHx magnetron sputtered thin films

    Annett Thøgersen

    2016-03-01

    Full Text Available Thin films of homogeneous mixture of amorphous silicon and aluminum were produced with magnetron sputtering using 2-phase Al–Si targets. The films exhibited variable compositions, with and without the presence of hydrogen, aSi1−xAlx and aSi1−xAlxHy. The structure and optical properties of the films were investigated using transmission electron microscopy, X-ray photoelectron spectroscopy, UV-VisNIR spectrometry, ellipsometry, and atomistic modeling. We studied the effect of alloying aSi with Al (within the range 0–25 at. % on the optical band gap, refractive index, transmission, and absorption. Alloying aSi with Al resulted in a non-transparent film with a low band gap (1 eV. Variations of the Al and hydrogen content allowed for tuning of the optoelectronic properties. The films are stable up to a temperature of 300 °C. At this temperature, we observed Al induced crystallization of the amorphous silicon and the presence of large Al particles in a crystalline Si matrix.

  9. Field profile tailoring in a-Si:H radiation detectors

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Quershi, S.; Wildermuth, D.; Street, R.A.

    1990-03-01

    The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs

  10. High-Efficiency Amorphous Silicon and Nanocrystalline Silicon-Based Solar Cells and Modules: Final Technical Progress Report, 30 January 2006 - 29 January 2008

    Guha, S.; Yang, J.

    2008-05-01

    United Solar Ovonic successfully used its spectrum-splitting a-Si:H/a-SiGe:H/a-SiGe:H triple-junction structure in their manufacturing plants, achieving a manufacturing capacity of 118 MW in 2007, and set up a very aggressive expansion plan to achieve grid parity.

  11. The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN sub x /a-Si:H/a-SiN sub x structures

    Zhang Li; Wang Li; Li Wei; Xu Jun; Huang Xin Fan; Chen Kun Ji

    2002-01-01

    Size-controlled nanocrystalline silicon (nc-Si) has been prepared from a-SiN sub x /a-Si:H/a-SiN sub x ('a' standing for amorphous) structures by thermal annealing. Transmission electron microscope analyses show that the lateral size of the nc-Si is controlled by the annealing conditions and the a-Si sublayer thickness. The deviation of the nc-Si grain size distribution decreases with the a-Si sublayer thickness, so thinner a-Si sublayers are favourable for obtaining uniform nc-Si grains. In the a-Si:H (10 nm) sample annealed at 1000 deg. C for 30 min, an obvious bi-modal size distribution of nc-Si grains appears, but no obvious bi-modal size distribution is found in other samples with thinner a-Si:H sublayers. On the basis of the experimental results, we discuss the process of transition from the sphere-like shape to the disc-like shape in the growth model of the nc-Si crystallization. The critical thickness of the a-Si sublayer for the constrained crystallization can be determined by the present model. More...

  12. EELS measurements of boron concentration profiles in p-a-Si and nip a-Si solar cells

    Van Aken, Bas B.; Duchamp, Martial; Boothroyd, Chris

    2012-01-01

    The p-type Si layer in a-Si and μc-Si solar cells on foil needs to fulfil several important requirements. The layer is necessary to create the electric field that separates the photo-generated charge carriers; the doping also increases the conductivity to conduct the photocurrent to the front......-3, using core-loss EELS combined with numerical analysis. We control the band gap and activation energy of p-a-SiC by varying the B2H6 and CH4 flow during deposition in the process chamber. We have found a linear relation between the activation energy of the dark conductivity Eact and the optical...... band gap E04. Modelling shows that the optimum efficiency in nip solar cells is obtained when the p-a-SiC band gap is slightly larger than the band gap of the absorber layer. We have assessed the potential of core-loss EELS for detecting B and C concentrations as low as 1020cm-3 in a spatially resolved...

  13. Enhancement of Spontaneous Erbium Emission near the Photonic Band Edge of Distributed Bragg Reflectors Based on a-Si:H/a-SiOx:H

    Medvedev, A.V.; Feoktistov, N.A.; Pevtsov, A.B.; Golubev, V.G.

    2005-01-01

    Results obtained in an experimental study of spontaneous emission from erbium ions in a spectral range corresponding to the lower photonic band edge of distributed Bragg reflectors (1D photonic crystals) are presented. The photonic crystals were constituted of alternating quarter-wave a-Si:H and a-SiO x :H layers grown by PECVD. Erbium was introduced into the a-Si:H layers by magnetron sputtering of an erbium target in the course of structure growth. The change observed in the intensity of spontaneous emission is due to the nonmonotonic behavior of the density of optical modes near the photonic band edge

  14. Development of GaInP/GaInAs/Ge TRIPLE-junction solar cells for CPV applications

    Barrigón Montañés, Enrique

    2014-01-01

    La concentración fotovoltaica (CPV) es una de las estrategias más prometedoras para reducir el coste de la electricidad de origen fotovoltaico, y está basada en células multiunión de alta eficiencia. En este contexto, esta Tesis trata sobre el desarrollo de células monolíticas de triple unión (GaInP/Ga(In)As/Ge) para sistemas de CPV. Para ello, se ha transferido una estructura de doble unión de GaInP/GaAs —previamente desarrollada en el grupo de Semiconductores III-V del IESUPM— a un sustrato...

  15. Optimization pathways to improve GaInP/GaInAs/Ge triple junction solar cells for CPV applications

    Barrutia Poncela, Laura

    2017-01-01

    La tecnología de concentración fotovoltaica (en inglés, Concentration Photovoltaics, CPV) ha experimentado un intenso desarrollo desde principios de los años 2000. En particular, las células solares de triple unión (GaInP/GaInAs/Ge) ajustadas en red siguen dominando el mercado CPV. Esta tesis pretende contribuir en la investigación de este tipo de célula multiunión desarrollada previamente en el Grupo de Semiconductores III-V del Instituto de Energía Solar de la Universidad Politécnica de Mad...

  16. Chile Triple Junction 2012: NE Lau Basin on Scripps Research Vessel Roger Revelle between 20120909 and 20120926

    National Oceanic and Atmospheric Administration, Department of Commerce — The Submarine Ring of Fire 2012 cruise will use the University of Bremen Quest 4000 remotely operated vehicle to locate, map and sample hydrothermal sites at...

  17. 3D Gravimetric Modeling of the Spreading System North and Southeast of the Rodriguez Triple Junction (Indian Ocean)

    Heyde, I.; Girolami, C.; Barckhausen, U.; Freitag, R.

    2017-12-01

    Hydrothermal vent fields along mid-ocean ridges can be metal-rich and thus of great importance for the industries in the future. By order of the German Federal Ministry of Economics and in coordination with the International Seabed Authority (ISA), BGR explores potential areas of the active spreading system in the Indian Ocean. A main goal is the identification of inactive seafloor massive sulfides (SMS) with the aid of modern exploration techniques. Important contributions could be expected from bathymetric, magnetic, and gravity datasets, which can be acquired simultaneously time from the sea surface within relatively short ship time. The area of interest is located between 21°S and 28°S and includes the southern Central Indian Ridge (CIR) and the northern Southeast Indian Ridge (SEIR). In this study we analyzed the marine gravity and bathymetric data acquired during six research cruises. The profiles running perpendicular to the ridge axis have a mean length of 60 km. Magnetic studies reveal that the parts of the ridges covered are geologically very young with the oldest crust dating back to about 1 Ma. To extend the area outside the ridges, the shipboard data were complemented with data derived from satellite radar altimeter measurements. We analyzed the gravity anomalies along sections which cross particular geologic features (uplifted areas, accommodation zones, hydrothermal fields, and areas with hints for extensional processes e.g. oceanic core complexes) to establish a correlation between the gravity anomalies and the surface geology. Subsequently, for both ridge segments 3D density models were developed. We started with simple horizontally layered models, which, however, do not explain the measured anomalies satisfyingly. The density values of the crust and the upper mantle in the ridge areas had to be reduced. Finally, the models show the lateral heterogeneity and the variations in the thickness of the oceanic crust. There are areas characterized by crustal thickening related to magmatic accretion and areas of crustal thinning related to depleted accretion and exposure of OCCs.

  18. A study on the evolution of Indian Ocean triple junction and the process of deformation in the Central Indian Basin

    Murthy, K.S.R.; Rao, T.C.S.

    It is generally presumed that the intraplate deformation in the Central Indian Basin (CIB) is a direct consequence of spreading across the South East Indian Ridge and the resistance to shortening at the continental collision between India...

  19. Continental rift formation and transition to ocean sea floor spreading : A case study of the Afar triple junction

    Lavecchia, A.L.

    2017-01-01

    Lithosphere extension, thinning and breakup are fundamental processes in geodynamics. During rift development, both the lithosphere and the mantle are involved in a coupled system, in which the main mechanisms and the forces associated with them often vary during the rift evolution. Furthermore, the

  20. Formation of hydrothermal deposits at Kings Triple Junction, northern Lau back-arc basin, SW Pacific: The geochemical perspectives

    Paropkari, A.L.; Ray, D.; Balaram, V.; Prakash, L.S.; Mirza, I.H.; Satyanarayana, M.; Rao, T.G.; Kaisary, S.

    low concentration of high field strength elements (e.g. Zr, Hf, Nb and Ta) and enrichment of light REE in these sulfides indicate prominent influence of aqueous arc-magma, rich in subduction components. The oxide growths in the 'Christmas Tree' Field...

  1. Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers

    Chagarov, Evgueni A.; Kavrik, Mahmut S.; Fang, Ziwei; Tsai, Wilman; Kummel, Andrew C.

    2018-06-01

    Comprehensive Density-Functional Theory (DFT) Molecular Dynamics (MD) simulations were performed to investigate interfaces between a-HfO2 and SiGe or Ge semiconductors with fully-stoichiometric a-SiO2 or sub-oxide SiO interlayers. The electronic structure of the selected stacks was calculated with a HSE06 hybrid functional. Simulations were performed before and after hydrogen passivation of residual interlayer defects. For the SiGe substrate with Ge termination prior to H passivation, the stacks with a-SiO suboxide interlayer (a-HfO2/a-SiO/SiGe) demonstrate superior electronic properties and wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/SiGe). After H passivation, most of the a-HfO2/a-SiO2/SiGe defects are passivated. To investigate effect of random placement of Si and Ge atoms additional simulations with a randomized SiGe slab were performed demonstrating improvement of electronic structure. For Ge substrates, before H passivation, the stacks with a SiO suboxide interlayer (a-HfO2/a-SiO/Ge) also demonstrate wider band-gaps than the stacks with fully coordinated a-SiO2 interlayers (a-HfO2/a-SiO2/Ge). However, even for a-HfO2/a-SiO/Ge, the Fermi level is shifted close to the conduction band edge (CBM) consistent with Fermi level pinning. Again, after H passivation, most of the a-HfO2/a-SiO2/Ge defects are passivated. The stacks with fully coordinated a-SiO2 interlayers have much stronger deformation and irregularity in the semiconductor (SiGe or Ge) upper layers leading to multiple under-coordinated atoms which create band-edge states and decrease the band-gap prior to H passivation.

  2. Temperature variation of non-radiative recombination rate in a-Si:H films

    Ogihara, C. [Department of Applied Science, Yamaguchi University, Ube 755-8611 (Japan); Morigaki, K. [Department of Electrical and Digital-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima 731-5193 (Japan); resent address: C-305, 2-12 Wakabadai, Inagi, Tokyo 206-0824 (Japan)

    2012-12-15

    Temperature variation of the recombination rates has been investigated for the electron-hole pairs responsible for defect PL in a defective a-Si:H film as grown. The results are compared with those obtained for a high-quality a-Si:H film after illumination. The results of the nonradiative recombination rate are fitted by a theoretical prediction for the case of strong electron-phonon coupling in the case of the defective a-Si:H film similarly to the case of the illuminated high-quality a-Si:H film. Difference between the frequency of the phonon associated with the non-radiative recombination process in the defective a-Si:H film and that in the illuminated highquality a-Si:H film is discussed by considering the influence of the amorphous network in the a-Si:H films affected by the preparation conditions and the nature of the native and photo-created defects. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Identification of nanoscale structure and morphology reconstruction in oxidized a-SiC:H thin films

    Vasin, A.V.; Rusavsky, A.V.; Nazarov, A.N.; Lysenko, V.S.; Lytvyn, P.M.; Strelchuk, V.V. [Lashkaryov Institute of Semiconductor Physics, 41 Nauki Pr., Kiev 03028 (Ukraine); Kholostov, K.I.; Bondarenko, V.P. [Belarusian State University of Informatics and Radioelectronics, 6P. Brovki Str., Minsk 220013 (Belarus); Starik, S.P. [Bakul Institute of Superhard Materials, 2 Avtzavodskaya Str., Kiev 04074 (Ukraine)

    2012-11-01

    Highlights: Black-Right-Pointing-Pointer Increase of magnetron discharge power results in densification of a-SiC:H thin films. Black-Right-Pointing-Pointer The denser a-SiC:H material the better resistance to oxidation by oxygen. Black-Right-Pointing-Pointer Oxidation of soft a-SiC:H films can result in increase of electric conductivity. Black-Right-Pointing-Pointer Formation of graphitic clusters was found in a-SiC:H after annealing in oxygen. - Abstract: Oxidation behavior of a-SiC:H layers deposited by radio-frequency magnetron sputtering technique was examined by Kelvin probe force microscopy (KPFM) in combination with scanning electron microscopy, Fourier-transform infra-red spectroscopy and submicron selected area Raman scattering spectroscopy. Partially oxidized a-SiC:H samples (oxidation at 600 Degree-Sign C in oxygen) were examined to clarify mechanism of the oxidation process. Nanoscale and microscale morphological defects (pits) with dimension of about 50 nm and several microns respectively have appeared after thermal treatment. KPFM measurements exhibited the surface potential of the material in micro pits is significantly smaller in comparison with surrounding material. Submicron RS measurements indicates formation of graphite-like nano-inclusions in the pit defects. We conclude that initial stage of oxidation process in a-SiC:H films takes place not homogeneously throughout the layer but it is initiated in local nanoscale regions followed by spreading over all layer.

  4. Raman Spectroscopy of DLC/a-Si Bilayer Film Prepared by Pulsed Filtered Cathodic Arc

    C. Srisang

    2012-01-01

    Full Text Available DLC/a-Si bilayer film was deposited on germanium substrate. The a-Si layer, a seed layer, was firstly deposited on the substrate using DC magnetron sputtering and DLC layer was then deposited on the a-Si layer using pulsed filtered cathodic arc method. The bilayer films were deposited with different DLC/a-Si thickness ratios, including 2/2, 2/6, 4/4, 6/2, and 9/6. The effect of DLC/a-Si thickness ratios on the sp3 content of DLC was analyzed by Raman spectroscopy. The results show that a-Si layer has no effect on the structure of DLC film. Furthermore, the upper shift in G wavenumber and the decrease in ID/IG inform that sp3 content of the film is directly proportional to DLC thickness. The plot modified from the three-stage model informed that the structural characteristics of DLC/a-Si bilayer films are located close to the tetrahedral amorphous carbon. This information may be important for analyzing and developing bilayer protective films for future hard disk drive.

  5. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

    2015-01-01

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

  6. Influence of the thermal annealing on the photoluminescence of a-Si:H:F thin films

    Mendoza A, J.G.; Torres D, G.

    1984-01-01

    The experimental results of the photoluminescence spectra of intrinsic layers of a: Si: H: F deposited by the electric discharge method are presented. This procedure was developed in the presence of silane. (M.W.O.) [pt

  7. Switching characteristic and capacitance analysis of a-Si:H pinpin photodiodes for visible range telecommunications

    Fantoni, A.; Fernandes, M.; Louro, P.; Vieira, M.

    2016-05-01

    The device under study is an a-SiC:H/a-Si:H pinpin photodiodes produced by PECVD (Plasma Enhanced Chemical Vapour Deposition) and has a structure that consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructure with low conductivity doped layers. This device structure has been demonstrated useful in optical communications that use the WDM technique to encode multiple signals in the visible light range. We present in this work experimental results about C-V measurements of the device under complex conditions of illumination. Also it is presented an analysis based on the transient response of the device when illuminated by a pulsed light, with and without optical bias superposition. Rising and decaying times of the collected photocurrent will be outlined under the different conditions. A simulation study outlines the role played by each pin substructure on the response speed and gives some hint on the possible optimization of this device.

  8. Hydrogen kinetics in a-Si:H and a-SiC:H thin films investigated by real-time ERD

    Halindintwali, S., E-mail: shalindintwali@uwc.ac.za [Physics Department, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Khoele, J. [Physics Department, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Nemroaui, O. [Department of Mechatronics, Cape Peninsula University of Technology, P.O. Box 1906, Bellville 7535 (South Africa); Comrie, C.M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa); Materials Research Department, iThemba LABS, P.O. Box 722, Somerset West 7129 (South Africa); Theron, C.C. [Physics Department, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa)

    2015-04-15

    Hydrogen effusion from hydrogenated amorphous silicon (a-Si:H) and amorphous silicon carbide (a-Si{sub 1−x}C{sub x}:H) thin films during a temperature ramp between RT and 600 °C was studied by in situ real-time elastic recoil detection analysis. Point to point contour maps show the hydrogen depth profile and its evolution with the ramped temperature. This paper proposes a diffusion limited evolution model to study H kinetic properties from total retained H contents recorded in a single ramp. In a compact a-Si:H layer where H predominantly effuses at high temperatures between 500 and 600 °C, an activation energy value of ∼1.50 eV and a diffusion pre-factor of 0.41 × 10{sup −4} cm{sup 2}/s were obtained. Applied to an non-stoichiometric a-Si{sub 1−x}C{sub x}:H film in the same range of temperature, the model led to reduced values of activation energy and diffusion prefactor of ∼0.33 eV and 0.59 × 10{sup −11} cm{sup 2}/s, respectively.

  9. Optimized spacer layer thickness for plasmonic-induced enhancement of photocurrent in a-Si:H

    Saleh, Z. M., E-mail: zaki.saleh@aauj.edu, E-mail: zakimsaleh@yahoo.com; Nasser, H.; Özkol, E.; Günöven, M.; Abak, K. [Middle East Technical University, Center for Solar Energy Research and Applications (GÜNAM) (Turkey); Canli, S. [Middle East Technical University, Central Laboratory (Turkey); Bek, A.; Turan, R. [Middle East Technical University, Center for Solar Energy Research and Applications (GÜNAM) (Turkey)

    2015-10-15

    Plasmonic interfaces consisting of silver nanoparticles of different sizes (50–100 nm) have been processed by the self-assembled dewetting technique and integrated to hydrogenated amorphous silicon (a-Si:H) using SiNx spacer layers to investigate the dependence of optical trapping enhancement on spacer layer thickness through the enhancements in photocurrent. Samples illuminated from the a-Si:H side exhibit a localized surface plasmon resonance (LSPR) that is red-shifted with the increasing particle size and broadened into the red with the increasing spacer layer thickness. The photocurrent measured in a-Si:H is not only consistent with the red-shift and broadening of the LSPR, but exhibits critical dependence on the spacer layer thickness also. The samples with plasmonic interfaces and a SiNx spacer layer exhibit appreciable enhancement of photocurrent compared with flat a-Si:H reference depending on the size of the Ag nanoparticle. Simulations conducted on one-dimensional square structures exhibit electric fields that are localized near the plasmonic structures but extend appreciably into the higher refractive index a-Si:H. These simulations produce a clear red-shift and broadening of extinction spectra for all spacer layer thicknesses and predict an enhancement in photocurrent in agreement with experimental results. The spectral dependence of photocurrent for six plasmonic interfaces with different Ag nanoparticle sizes and spacer layer thicknesses are correlated with the optical spectra and compared with the simulations to predict an optimal spacer layer thickness.

  10. Atomic and electronic structures of a-SiC:H from tight-binding molecular dynamics

    Ivashchenko, V I; Shevchenko, V I; Ivashchenko, L A; Rusakov, G V

    2003-01-01

    The atomic and electronic properties of amorphous unhydrogenated (a-SiC) and hydrogenated (a-SiC:H) silicon carbides are studied using an sp sup 3 s sup * tight-binding force model with molecular dynamics simulations. The parameters of a repulsive pairwise potential are determined from ab initio pseudopotential calculations. Both carbides are generated from dilute vapours condensed from high temperature, with post-annealing at low temperature for a-SiC:H. A plausible model for the inter-atomic correlations and electronic states in a-SiC:H is suggested. According to this model, the formation of the amorphous network is weakly sensitive to the presence of hydrogen. Hydrogen passivates effectively only the weak bonds of threefold-coordinated atoms. Chemical ordering is very much affected by the cooling rate and the structure of the high-temperature vapour. The as-computed characteristics are in rather good agreement with the results for a-SiC and a-Si:H from ab initio calculations.

  11. Influence of a-Si:H deposition power on surface passivation property and thermal stability of a-Si:H/SiNx:H stacks

    Hua Li

    2012-06-01

    Full Text Available The effectiveness of hydrogenated amorphous silicon (a-Si:H layers for passivating crystalline silicon surfaces has been well documented in the literature for well over a decade. One limitation of such layers however has arisen from their inability to withstand temperatures much above their deposition temperature without significant degradation. This limitation is of importance particularly with multicrystalline silicon materials where temperatures of at least 400°C are needed for effective hydrogenation of the crystallographic defects such as grain boundaries. To address this limitation, in this work the surface passivation quality and thermal stability of a stack passivating system, combining a layer of intrinsic a-Si:H and a capping layer of silicon nitride (SiNx:H, on p-type crystalline silicon wafers is studied and optimized. In particular the sensitivity of different microwave (MW power levels for underlying a-Si:H layer deposition are examined. Both effective minority carrier lifetime (ζeff measurement and Fourier transform infrared (FTIR spectrometry were employed to study the bonding configurations, passivating quality and thermal stability of the a-Si:H/SiNx:H stacks. It is established that the higher MW power could result in increased as-deposited ζeff and implied Voc (iVoc values, indicating likely improved surface passivation quality, but that this combination degrades more quickly when exposed to prolonged thermal treatments. The more dihydride-rich film composition corresponding to the higher MW power appears to be beneficial for bond restructuring by hydrogen interchanges when exposed to short term annealing, however it also appears more susceptible to providing channels for hydrogen out-effusion which is the likely cause of the poorer thermal stability for prolonged high temperature exposure compared with stacks with underlying a-Si:H deposited with lower MW power.

  12. Efficient outdoor performance of esthetic bifacial a-Si:H semi-transparent PV modules

    Myong, Seung Yeop; Jeon, Sang Won

    2016-01-01

    Highlights: • 1.43 m"2 a-Si:H semi-transparent PV modules with emotionally inoffensive and esthetically pleasing colors are developed. • Seasonal outdoor performance of the developed colorful PV modules is measured and simulated. • The bifacial TBC a-Si:H semi-transparent PV module performs at a superior annual electrical energy output. • An impressive performance ratio of 124.5% is achieved by surpassing a simulated prediction considerably. - Abstract: We developed bifacial transparent back contact (TBC) hydrogenated amorphous silicon (a-Si:H) semi-transparent glass-to-glass photovoltaic (PV) modules with emotionally inoffensive and esthetically pleasing colors have been developed by combining the transparent back contact and color of the back glass. Due to the high series resistance of the transparent back contact, the bifacial TBC a-Si:H semi-transparent PV modules had a lower rated power after light soaking than the monofacial opaque (metal) back contact (OBC) a-Si:H semi-transparent PV modules fabricated using the additional laser scribing patterns. However, the TBC a-Si:H semi-transparent PV module produced a higher annual electrical energy output than the OBC a-Si:H semi-transparent PV module thanks to bifacial power generation during the outdoor field test. In particular, the performance ratio of the TBC a-Si:H semi-transparent PV module measured at the optimal tilt angle of 30° surpassed its simulated prediction by a drastically high value of 124.5%. At a higher tilt angle of 85°, bifacial power generation produced a higher deviation between the measured and simulated annual performance of the TBC a-Si:H semi-transparent PV module. Since the reflected albedo has a tendency to increase toward higher tilt angles, bifacial power generation can compensate for the loss of lower direct plane-of-array irradiation at a higher tilt angle. Therefore, the TBC a-Si:H semi-transparent PV module is suitable for the vertically mounted building integrated

  13. Application of a-Si:H radiation detectors in medical imaging

    Lee, Hyoung-Koo.

    1995-06-01

    Monte Carlo simulations of a proposed a-Si:H-based current-integrating gamma camera were performed. The analysis showed that the intrinsic resolution of such a camera was 1 ∼ 2.5 mm, which is somewhat better than that of a conventional gamma camera, and that the greater blurring, due to the detection of scattered γ-rays, could be reduced considerably by image restoration techniques. This proposed gamma camera would be useful for imaging shallow organs such as the thyroid. Prototype charge-storage a-Si:H pixel detectors for such a camera were designed, constructed and tested. The detectors could store signal charge as long as 5 min at -26C. The thermal generation current in reverse biased a-Si:H p-i-n photodetectors was investigated, and the Poole-Frenkel effect was found to be the most significant source of the thermal generation current. Based on the Poole-Frenkel effect, voltage- and time-dependent thermal generation current was modeled. Using the model, the operating conditions of the proposed a-Si:H gamma camera, such as the operating temperature, the operating bias and the γ-scan period, could be predicted. The transient photoconductive gain mechanism in various a-Si:H devices was investigated for applications in digital radiography. Using the a-Si:H photoconductors in n-i-n configuration in pixel arrays, enhancement in signal collection (more than 200 times higher signal level) can be achieved in digital radiography, compared to the ordinary p-i-n type a-Si:H x-ray imaging arrays

  14. Investigation of Performance Silicon Heterojunction Solar Cells Using a-Si: H or a-SiC: H at Emitter Layer Through AMPS-1D Simulations

    Asmaa BENSMAIN

    2014-05-01

    Full Text Available We offer a numerical simulation tool, AMPS-1D, which allows to model homo- as well as heterojunction devices. AMPS-1D is the short form of automat for simulation of heterostructures. The program solves the one dimensional semiconductor equations in steady-state. Furthermore, a variety of common characterization techniques have been implemented, current- voltage, external quantum efficiency, conduction and valence band. A user-friendly interface allows to easily perform parameter variations, and to visualize and compare your simulations. In this work, The silicon heterojunction cell performances are investigated by detailed described on external quantum efficiency, and light current-voltage characteristics by recognized simulator AMPS-1D (Analysis of Micro- electronics and Photonic Structures. The objective of this work is to study the correlation between the emitter properties of both heterojunction cells a-Si:H/c-Si and a-SiC:H/c-Si (absorption, defect profiles and energy band offsets and the carrier collection.

  15. Optical absorptions in ZnO/a-Si distributed Bragg reflectors

    Chen, Aqing, E-mail: aqchen@hdu.edu.cn; Chen, Zhian [Hangzhou Dianzi University, College of Materials & Environmental Engineering (China); Zhu, Kaigui [Beihang University, Department of physics (China); Ji, Zhenguo [Hangzhou Dianzi University, College of Materials & Environmental Engineering (China)

    2017-01-15

    The distributed Bragg reflectors (DBRs) consisting of alternating layers of ZnO and heavy doped amorphous silicon (a-Si) have been fabricated by magnetron sputtering. It is novel to find that the optical absorptions exist in the stopband of the DBRs, and that many discrete strong optical absorption peaks exist in the wavelength range of visible to near-infrared. The calculated results by FDTD show that the absorptions in the stopband mainly exist in the first a-Si layer, and that the light absorbed by other a-Si layers inside contributes to the two absorption peaks in near-infrared range. The strong absorptions ranged from visible to infrared open new possibilities to the enhancement of the performance of amorphous silicon solar cells.

  16. Excitation mechanism of Er{sup 3+} in a-Si:H; Anregungsmechanismus von Er{sup 3+} in a-Si:H

    Kuehne, H.

    2004-07-01

    The aim of this work is the examination of the optoelectronical material a-Si:H (Er). It is characterised in the good electronic properties of the a-Si:H and the emission wavelength of 1.5 micrometer of erbium which coincides with the absorbtion minimum of glasfibres. Photoluminescence measurements confirm the assumption that oxigen is necessary for the optical activation of Er{sup 3+} in addition to the symmetrical breaking of the crystal field. The flexible lattice of a-Si:H enables a high concentration of Erbium up to 5.10{sup 21}/cm{sup 3} with a quantum efficiency of the luminescence of 0.5-1.5.10{sup -4} at room temperature. Photoluminescence excitation and absorption measurements of a-Si:H (Er) show, that there is no direct excitation of the erbium ions because the absorption of the Er{sup 3+} ions is two orders of magnitude below the absorption of silicon. The excitation or the Er{sup 3+} ions takes place through the absorption in silicon with additional energy transfer to Erbium. Photoluminescence measurements are done in order to differentiate between the possible excitation channels, the intrinsic bond-bond channel and the excitation through defects. The different temperature dependence of the intensity of the intrinsic luminescence (77 K - 300 K >3 orders of magnitude) in comparison with the defect luminescence and the Erbium luminescence (both 1-1.5 orders of magnitude) shows that the energy transfer takes place over defects. Luminescence and absorption measurements with boron doped a-Si:H (Er) show no dependence of the Erbium luminescence in dependence of defect density or the electrical charge of the defects. The luminescence spectra show a break in the defect luminescence at 0.84 eV. This agrees with the first excited state of the Er{sup 3+} ion combined with a clearly smaller line width of the defect luminescence (0.18 eV in comparision with >0.3 eV in erbium free a-Si:H). This result shows the resonance of the energy transfer. The resonance is

  17. Microstructure Related Characterization of a-Si:H Thin Films PECVD Deposited under Varied Hydrogen Dilution

    Veronika Vavrunkova

    2007-01-01

    Full Text Available We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.

  18. Dispersive transport in hydrogenated a-Si prepared by rf sputtering

    Shirafuji, Junji; Kim, Gi-Il; Sawadsaringkarn, M.; Inuishi, Yoshio

    1981-01-01

    Time-of-flight measurement of photo-excited carriers has been carried out in hydrogenated a-Si deposited by rf sputtering method. Both electrons and holes show highly dispersive transport. The electron drift mobility near room temperature ranges from 5 x 10 -3 to 4 x 10 -5 cm 2 /V.s, much lower than that of GD samples, and the activation energy is about 0.3 eV. The value of the hole mobility is comparable with that in GD specimens, but its activation energy is about 0.2 eV which is about half of that observed in GD a-Si. (author)

  19. Luminescence of solar cells with a-Si:H/c-Si heterojunctions

    Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

    2017-05-01

    We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

  20. Correlation of nanostructure and charge transport properties of oxidized a -SiC:H films

    Gordienko, S.O.; Nazarov, A.N.; Vasin, A.V.; Rusavsky, A.V.; Lysenko, V.S. [Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 41, 03028 Kyiv (Ukraine)

    2012-06-15

    This paper considers the influence of low temperature oxidation on structural and electrical properties of amorphous carbon-rich a -Si{sub 1-x}C{sub x}:H thin films fabricated by reactive RF magnetron sputtering. It is shown that oxidation leads to formation of SiO{sub x} matrix with graphite-like carbon inclusions. Such conductive precipitates has a strong effect on charge transport in oxidized a -Si{sub 1-x}C{sub x}:H films (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Study on stability of a-SiCOF films deposited by plasma enhanced chemical vapor deposition

    Ding Shijin; Zhang Qingquan; Wang Pengfei; Zhang Wei; Wang Jitao

    2001-01-01

    Low-dielectric-constant a-SiCOF films have been prepared from TEOS, C 4 F 8 and Ar by using plasma enhanced chemical vapor deposition method. With the aid of X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR), the chemical bonding configuration, thermal stability and resistance to water of the films are explored

  2. Progressive degradation in a-Si: H/SiN thin film transistors

    Merticaru, A.R.; Mouthaan, A.J.; Kuper, F.G.

    2003-01-01

    In this paper we present the study of gate-stress induced degradation in a-Si:H/SiN TFTs. The drain current transient during gate bias stress (forward or reverse bias) and subsequent relaxation cannot be fitted with the models existent in the literature but it shows to be described by a progressive

  3. Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems

    Lu, J.; Liu, W.; van der Werf, C.H.M.; Kovalgin, A.Y.; Sun, Y.; Schropp, R.E.I.; Schmitz, J.

    2010-01-01

    Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal

  4. Polysilicon tft's fabricated by crystallization of a-si:h enhanced by hydrogen plasma

    Gallegos, O.; Garcia, R.; Estrada, M.; Cerdeira, A.; Leyva, A.

    2001-01-01

    Poly-silicon thin film transistors (TFTs) are widely applied in integrated LCD driving circuits and image sensors, because they have better characteristics than a-Si:H TFTs. Poly-silicon can deposited or obtained by crystallization of amorphous silicon layers after annealing above 900 oC. For the last years, research is been done in order to crystallize a- Si:H films at low temperature and time budget. In this work we present crystallization at 650 oC of intrinsic and doped a-Si:H layers after a hydrogen plasma annealing to enhanced the crystallization process. Intrinsic layers crystallized in 4-6 hours after annealing in hydrogen plasma, while doped layers crystallized for the same annealing times, independently of been or not annealed in hydrogen plasma. Layers were characterized by XRD and by resistivity measurements. Resistivity of n-type layers changed from 300 to 0.02 cm after crystallization. Resistivity of i-layers also decreased, but both values are very high and it is difficult to determine with precision its change. The high resistivity of the polycrystalline layers is determined by the small grain size. Poly-silicon TFTs were fabricated using the above procedure to crystallize the amorphous layers. The complete fabrication process is presented. Output characteristics are shown and compared to same characteristics for a-Si:H TFTs fabricated simultaneously with the exception of the crystallization process. TFTs' sensibility to light was also used to verify that crystallization took place

  5. Microprocessing of ITO and a-Si thin films using ns laser sources

    Molpeceres, C.; Lauzurica, S.; Ocaña, J. L.; Gandía, J. J.; Urbina, L.; Cárabe, J.

    2005-06-01

    Selective ablation of thin films for the development of new photovoltaic panels and sensoring devices based on amorphous silicon (a-Si) is an emerging field, in which laser micromachining systems appear as appropriate tools for process development and device fabrication. In particular, a promising application is the development of purely photovoltaic position sensors. Standard p-i-n or Schottky configurations using transparent conductive oxides (TCO), a-Si and metals are especially well suited for these applications, appearing selective laser ablation as an ideal process for controlled material patterning and isolation. In this work a detailed study of laser ablation of a widely used TCO, indium-tin-oxide (ITO), and a-Si thin films of different thicknesses is presented, with special emphasis on the morphological analysis of the generated grooves. Excimer (KrF, λ = 248 nm) and DPSS lasers (λ = 355 and λ = 1064 nm) with nanosecond pulse duration have been used for material patterning. Confocal laser scanning microscopy (CLSM) and scanning electron microscopy (SEM) techniques have been applied for the characterization of the ablated grooves. Additionally, process parametric windows have been determined in order to assess this technology as potentially competitive to standard photolithographic processes. The encouraging results obtained, with well-defined ablation grooves having thicknesses in the order of 10 µm both in ITO and in a-Si, open up the possibility of developing a high-performance double Schottky photovoltaic matrix position sensor.

  6. Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells

    Lu, J.; Kovalgin, Alexeij Y.; van der Werf, Karine H.M.; Schropp, Ruud E.I.; Schmitz, Jurriaan

    2011-01-01

    We present the monolithic integration of deepsubmicrometer complementary metal–oxide–semiconductor (CMOS) microchips with a-Si:H solar cells. Solar cells are manufactured directly on the CMOS chips. The microchips maintain comparable electronic performance, and the solar cells show efficiency values

  7. Determination of the optical parameters of a-Si:H thin films ...

    single-effective oscillator model to the a-Si:H samples to calculate the optical ..... et al [23] and have similar trend as those shown by El-Sayed and Amin [24]. .... [3] K L Chopra, Thin film phenomena (McGraw-Hill Book Company, USA, 1969).

  8. High growth rate of a-SiC:H films using ethane carbon source by HW

    Hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared ... Total hydrogen content drops from 22.6 to 14.4 at.% when deposition pressure is increased. Raman spectra show increase in structural disorder with increase in ...

  9. Active counter electrode in a-SiC electrochemical metallization memory

    Morgan, K. A.; Fan, J.; Huang, R.; Zhong, L.; Gowers, R.; Ou, J. Y.; Jiang, L.; De Groot, C. H.

    2017-08-01

    Cu/amorphous-SiC (a-SiC) electrochemical metallization memory cells have been fabricated with two different counter electrode (CE) materials, W and Au, in order to investigate the role of CEs in a non-oxide semiconductor switching matrix. In a positive bipolar regime with Cu filaments forming and rupturing, the CE influences the OFF state resistance and minimum current compliance. Nevertheless, a similarity in SET kinetics is seen for both CEs, which differs from previously published SiO2 memories, confirming that CE effects are dependent on the switching layer material or type. Both a-SiC memories are able to switch in the negative bipolar regime, indicating Au and W filaments. This confirms that CEs can play an active role in a non-oxide semiconducting switching matrix, such as a-SiC. By comparing both Au and W CEs, this work shows that W is superior in terms of a higher R OFF/R ON ratio, along with the ability to switch at lower current compliances making it a favourable material for future low energy applications. With its CMOS compatibility, a-SiC/W is an excellent choice for future resistive memory applications.

  10. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    Lim, Namsoo; Yoo, Tae Jin; Kim, Jin Tae; Pak, Yusin; Kumaresan, Yogeenth; Kim, Hyeonghun; Kim, Woochul; Lee, Byoung Hun; Jung, Gun Young

    2018-01-01

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates

  11. Material dimensionality effects on the nanoindentation behavior of Al/a-Si core-shell nanostructures

    Fleming, Robert A. [Department of Mechanical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Center for Advanced Surface Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Goss, Josue A. [Center for Advanced Surface Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zou, Min, E-mail: mzou@uark.edu [Department of Mechanical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Center for Advanced Surface Engineering, University of Arkansas, Fayetteville, AR 72701 (United States)

    2017-08-01

    Highlights: • Nanoindentation behavior of Al/a-Si core-shell nanostructures were studied. • 3D core confinement enables significant deformation recovery beyond elastic limit. • As the confinement is reduced, the deformation recovery is reduced or suppressed. • Atomistic simulations suggest core confinement affects dislocation dynamics. • 3D confinement has the highest percentage of dislocation removal after unloading. - Abstract: The nanoindentation behavior of hemispherical Al/a-Si core-shell nanostructures (CSNs), horizontally-aligned Al/a-Si core-shell nanorods (CSRs) with various lengths, and an Al/a-Si layered thin film has been studied to understand the effects of geometrical confinement of the Al core on the CSN deformation behavior. When loaded beyond the elastic limit, the CSNs have an unconventional load-displacement behavior with no residual displacement after unloading, resulting in no net shape change after indentation. This behavior is enabled by dislocation activities within the confined Al core, as indicated by discontinuous indentation signatures (load-drops and load-jumps) observed in the load-displacement data. When the geometrical confinement of the core is slightly reduced, as in the case of CSRs with the shortest rod length, the discontinuous indentation signatures and deformation resistance are heavily reduced. Further decreases in core confinement result in conventional nanoindentation behavior, regardless of geometry. Supporting molecular dynamics simulations show that dislocations nucleated in the core of a CSN are more effectively removed during unloading compared to CSRs, which supports the hypothesis that the unique deformation resistance of Al/a-Si CSNs are enabled by 3-dimensional confinement of the Al core.

  12. Material dimensionality effects on the nanoindentation behavior of Al/a-Si core-shell nanostructures

    Fleming, Robert A.; Goss, Josue A.; Zou, Min

    2017-01-01

    Highlights: • Nanoindentation behavior of Al/a-Si core-shell nanostructures were studied. • 3D core confinement enables significant deformation recovery beyond elastic limit. • As the confinement is reduced, the deformation recovery is reduced or suppressed. • Atomistic simulations suggest core confinement affects dislocation dynamics. • 3D confinement has the highest percentage of dislocation removal after unloading. - Abstract: The nanoindentation behavior of hemispherical Al/a-Si core-shell nanostructures (CSNs), horizontally-aligned Al/a-Si core-shell nanorods (CSRs) with various lengths, and an Al/a-Si layered thin film has been studied to understand the effects of geometrical confinement of the Al core on the CSN deformation behavior. When loaded beyond the elastic limit, the CSNs have an unconventional load-displacement behavior with no residual displacement after unloading, resulting in no net shape change after indentation. This behavior is enabled by dislocation activities within the confined Al core, as indicated by discontinuous indentation signatures (load-drops and load-jumps) observed in the load-displacement data. When the geometrical confinement of the core is slightly reduced, as in the case of CSRs with the shortest rod length, the discontinuous indentation signatures and deformation resistance are heavily reduced. Further decreases in core confinement result in conventional nanoindentation behavior, regardless of geometry. Supporting molecular dynamics simulations show that dislocations nucleated in the core of a CSN are more effectively removed during unloading compared to CSRs, which supports the hypothesis that the unique deformation resistance of Al/a-Si CSNs are enabled by 3-dimensional confinement of the Al core.

  13. Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

    Wei Yuan Wong

    2017-01-01

    Full Text Available Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

  14. Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

    Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

    2017-11-01

    Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

  15. Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

    Peyman Jelodarian

    2012-01-01

    Full Text Available The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2 and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

  16. Correlating the silicon surface passivation to the nanostructure of low-temperature a-Si:H after rapid thermal annealing

    Macco, B.; Melskens, J.; Podraza, N.J.; Arts, K.; Pugh, C.; Thomas, O.; Kessels, W.M.M.

    2017-01-01

    Using an inductively coupled plasma, hydrogenated amorphous silicon (a-Si:H) films have been prepared at very low temperatures (<50 °C) to provide crystalline silicon (c-Si) surface passivation. Despite the limited nanostructural quality of the a-Si:H bulk, a surprisingly high minority carrier

  17. Improved charge collection of the buried p-i-n a-Si:H radiation detectors

    Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.

    1989-09-01

    Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 μm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs

  18. The growth of Zn on a Si(1 0 0)-2x1 surface

    Xie Zhaoxiong; Tanaka, Ken-ichi

    2005-01-01

    Adsorption of Zn atoms on a Si(1 0 0)-2x1 surface was studied by scanning tunneling microscopy at room temperature. Narrow lines are grown perpendicular to the Si-dimer rows of the [1 1 0] direction at low coverage. The narrow line is formed by arraying rectangular Zn 3 dots, where a dot is composed of one Zn atom on a Si dimer and the other two in the neighboring two hollow sites. When the Si(1 0 0)-2x1 surface is covered with one monolayer of Zn, a 4x1 structure is established. More deposition of Zn on the 4x1 monolayer grows into three-dimensional Zn islands

  19. Switching Investigations on a SiC MOSFET in a TO-247 Package

    Anthon, Alexander; Hernandez Botella, Juan Carlos; Zhang, Zhe

    2014-01-01

    This paper deals with the switching behavior of a SiC MOSFET in a TO-247 package. Based on simulations, critical parasitic inductances in the circuit layout are analyzed and their effect on the switching losses highlighted. Especially the common source inductance, a critical parameter in a TO-247...... package, has a major influence on the switching energy. Crucial design guidelines for an improved double pulse test circuit are introduced which are used for practical investigations on the switching behavior. Switching energies of a SiC MOSFET in a TO-247 package is measured depending on varying gate...... resistance and loop inductances. With total switching energy of 340.24 μJ, the SiC MOSFET has more than six times lower switching losses than a regular Si IGBT. Implementing the SiC switches in a 3 kW T-Type inverter topology, efficiency improvements of 0.8 % are achieved and maximum efficiency of 97...

  20. Broad-band anti-reflection coupler for a : Si thin-film solar cell

    Lo, S.-S.; Chen, C.-C.; Garwe, Frank; Pertch, Thomas

    2007-01-01

    This work numerically demonstrates a new anti-reflection coupler (ARC) with high coupling efficiency in a Si substrate solar cell. The ARC in which the grating is integrated on a glass encapsulation and a three-layer impedance match layer is proposed. A coupling efficiency of 90% is obtained at wavelengths between 350 and 1200 nm in the TE and TM modes when the incident angle is less than 30 0 . In comparison with a 1μm absorber layer, the integrated absorption of an a-Si thin-film solar cell without a new ARC is doubled, at long wavelengths (750 nm ≤ λ ≤ 1200 nm), as calculated by FDTD method

  1. H2O incorporation in the phosphorene/a-SiO2 interface: a first-principles study.

    Scopel, Wanderlã L; Souza, Everson S; Miwa, R H

    2017-02-22

    Based on first-principles calculations, we investigate (i) the energetic stability and electronic properties of single-layer phosphorene (SLP) adsorbed on an amorphous SiO 2 surface (SLP/a-SiO 2 ), and (ii) the further incorporation of water molecules at the phosphorene/a-SiO 2 interface. In (i), we find that the phosphorene sheet binds to a-SiO 2 through van der Waals interactions, even in the presence of oxygen vacancies on the surface. The SLP/a-SiO 2 system presents a type-I band alignment, with the valence (conduction) band maximum (minimum) of the phosphorene lying within the energy gap of the a-SiO 2 substrate. The structure and the surface-potential corrugations promote the formation of electron-rich and electron-poor regions on the phosphorene sheet and at the SLP/a-SiO 2 interface. Such charge density puddles are strengthened by the presence of oxygen vacancies in a-SiO 2 . In (ii), because of the amorphous structure of the surface, we consider a number of plausible geometries for H 2 O embedded in the SLP/a-SiO 2 interface. There is an energetic preference for the formation of hydroxyl (OH) groups on the a-SiO 2 surface. Meanwhile, in the presence of oxygenated water or interstitial oxygen in the phosphorene sheet, we observe the formation of metastable OH bonded to the phosphorene, and the formation of energetically stable P-O-Si chemical bonds at the SLP/a-SiO 2 interface. Further x-ray absorption spectra simulations are performed, which aim to provide additional structural/electronic information on the oxygen atoms forming hydroxyl groups or P-O-Si chemical bonds at the interface region.

  2. Utilization of photoconductive gain in a-Si:H devices for radiation detection

    Lee, H.K.; Drewery, J.S.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Perez-Mendez, V.

    1995-05-01

    The photoconductive gain mechanism in a-Si:H was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and n-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales: one for short pulses of visible light ( 2 . Various gain results are discussed in terms of the device structure, applied bias and dark current

  3. Assessment of laser ablation techniques in a-si technologies for position-sensor development

    Molpeceres, C.; Lauzurica, S.; Ocana, J. L.; Gandia, J. J.; Urbina, L.; Carabe, J.

    2005-07-01

    Laser micromachining of semiconductor and Transparent Conductive Oxides (TCO) materials is very important for the practical applications in photovoltaic industry. In particular, a problem of controlled ablation of those materials with minimum of debris and small heat affected zone is one of the most vital for the successful implementation of laser micromachining. In particular, selective ablation of thin films for the development of new photovoltaic panels and sensoring devices based on amorphous silicon (a-Si) is an emerging field, in which laser micromachining systems appear as appropriate tools for process development and device fabrication. In particular, a promising application is the development of purely photovoltaic position sensors. Standard p-i-n or Schottky configurations using Transparent Conductive Oxides (TCO), a-Si and metals are especially well suited for these applications, appearing selective laser ablation as an ideal process for controlled material patterning and isolation. In this work a detailed study of laser ablation of a widely used TCO, Indium-tin-oxide (ITO), and a-Si thin films of different thicknesses is presented, with special emphasis on the morphological analysis of the generated grooves. The profiles of ablated grooves have been studied in order to determine the best processing conditions, i.e. laser pulse energy and wavelength, and to asses this technology as potentially competitive to standard photolithographic processes. The encouraging results obtained, with well defined ablation grooves having thicknesses in the order of 10 μm both in ITO and a-Si, open up the possibility of developing a high-performance double Schottky photovoltaic matrix position sensor.

  4. Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma; Propiedades del a-Si:H depositado utilizando un plasma de microondas

    Mejia H, J A

    1997-12-31

    Hydrogenated amorphous silicon (a-Si:H) films have been widely applied to semiconductor devices, such as thin film transistors, solar cells and photosensitive devices. In this work, the first Si-H-Cl alloys (obtained at the National Institute for Nuclear Research of Mexico) were formed by a microwave electron cyclotron resonance (Ecr) plasma CVD method. Gaseous mixtures of silicon tetrachloride (Si Cl{sub 4}), hydrogen and argon were used. The Ecr plasma was generated by microwaves at 2.45 GHz and a magnetic field of 670 G was applied to maintain the discharge after resonance condition (occurring at 875 G). Si and Cl contents were analyzed by Rutherford Backscattering Spectrometry (RBS). It was found that, increasing proportion of Si Cl{sub 4} in the mixture or decreasing pressure, the silicon and chlorine percentages decrease. Optical gaps were obtained by spectrophotometry. Decreasing temperature, optical gap values increase from 1.4 to 1.5 eV. (Author).

  5. Anomalous degradation behaviors under illuminated gate bias stress in a-Si:H thin film transistor

    Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Lin, Kun-Yao; Wu, Yi-Chun; Huang, Shih-Feng; Chiang, Cheng-Lung; Chen, Po-Lin; Lai, Tzu-Chieh; Lo, Chang-Cheng; Lien, Alan

    2014-01-01

    This study investigates the impact of gate bias stress with and without light illumination in a-Si:H thin film transistors. It has been observed that the I–V curve shifts toward the positive direction after negative and positive gate bias stress due to interface state creation at the gate dielectric. However, this study found that threshold voltages shift negatively and that the transconductance curve maxima are anomalously degraded under illuminated positive gate bias stress. In addition, threshold voltages shift positively under illuminated negative gate bias stress. These degradation behaviors can be ascribed to charge trapping in the passivation layer dominating degradation instability and are verified by a double gate a-Si:H device. - Highlights: • There is abnormal V T shift induced by illuminated gate bias stress in a-Si:H thin film transistors. • Electron–hole pair is generated via trap-assisted photoexcitation. • Abnormal transconductance hump is induced by the leakage current from back channel. • Charge trapping in the passivation layer is likely due to the fact that a constant voltage has been applied to the top gate

  6. Charactrization of a Li-ion battery based stand-alone a-Si photovoltaic system

    Hamid Vishkasougheh, Mehdi; Tunaboylu, Bahadir

    2014-01-01

    Highlights: • An Li-ion battery based stand-alone a-Si PV was designed. The system composed of three a-Si panels with an efficiency of 7% and 40 cells of LFP batteries. • Effects of solar radiation and environmental temperature for three cities, Istanbul, Ankara, and Adana, have been investigated on a-Si panels. • Using transition formulas BSPV outputs are predictable for any location out of standard test condition. - Abstract: The number of photovoltaic (PV) system installations is increasing rapidly. As more people learn about this versatile and often cost-effective power option, this trend will accelerate. This document presents a recommended design for a battery based stand-alone photovoltaic system (BSPV). BSPV system has the ability to be applied in different areas, including warning signals, lighting, refrigeration, communication, residential water pumping, remote sensing, and cathodic protection. The presented calculation method gives a proper idea for a system sizing technique. Based on application load, different scenarios are possible for designing a BSPV system. In this study, a battery based stand-alone system was designed. The electricity generation part is three a-Si panels, which are connected in parallel, and for the storage part LFP (lithium iron phosphate) battery was used. The high power LFP battery packs are 40 cells each 8S5P (configured 8 series 5 parallel). Each individual pack weighs 0.5 kg and is 25.6 V. In order to evaluate the efficiency of a-Si panels with respect to the temperature and the solar irradiation, cities of Istanbul, Ankara and Adana in Turkey were selected. Temperature and solar irradiation were gathered from reliable sources and by using translation equations, current and voltage output of panels were calculated. As a result of these calculations, current and energy outputs were computed by considering an average efficient solar irradiation time value per day in Turkey. The calculated power values were inserted to a

  7. Charactrization of a Li-ion battery based stand-alone a-Si photovoltaic system

    Hamid Vishkasougheh, Mehdi, E-mail: mehdi.hamid2@gmail.com [Istanbul Sehir University, Kubakisi Caddesi, No: 27, Altunizade, Uskudar, Istanbul 34662 (Turkey); Tunaboylu, Bahadir [Istanbul Sehir University, Kubakisi Caddesi, No: 27, Altunizade, Uskudar, Istanbul 34662 (Turkey); Marmara Research Center, Materials Institute, PO Box 21, Gebze, Kocaeli 41470 (Turkey)

    2014-11-01

    Highlights: • An Li-ion battery based stand-alone a-Si PV was designed. The system composed of three a-Si panels with an efficiency of 7% and 40 cells of LFP batteries. • Effects of solar radiation and environmental temperature for three cities, Istanbul, Ankara, and Adana, have been investigated on a-Si panels. • Using transition formulas BSPV outputs are predictable for any location out of standard test condition. - Abstract: The number of photovoltaic (PV) system installations is increasing rapidly. As more people learn about this versatile and often cost-effective power option, this trend will accelerate. This document presents a recommended design for a battery based stand-alone photovoltaic system (BSPV). BSPV system has the ability to be applied in different areas, including warning signals, lighting, refrigeration, communication, residential water pumping, remote sensing, and cathodic protection. The presented calculation method gives a proper idea for a system sizing technique. Based on application load, different scenarios are possible for designing a BSPV system. In this study, a battery based stand-alone system was designed. The electricity generation part is three a-Si panels, which are connected in parallel, and for the storage part LFP (lithium iron phosphate) battery was used. The high power LFP battery packs are 40 cells each 8S5P (configured 8 series 5 parallel). Each individual pack weighs 0.5 kg and is 25.6 V. In order to evaluate the efficiency of a-Si panels with respect to the temperature and the solar irradiation, cities of Istanbul, Ankara and Adana in Turkey were selected. Temperature and solar irradiation were gathered from reliable sources and by using translation equations, current and voltage output of panels were calculated. As a result of these calculations, current and energy outputs were computed by considering an average efficient solar irradiation time value per day in Turkey. The calculated power values were inserted to a

  8. Doubly-resonant coherent excitation of HCI planar channeled in a Si crystal

    Nakano, Y; Masugi, S; Muranaka, T; Azuma, T; Kondo, C; Hatakeyama, A; Komaki, K; Yamazaki, Y; Takada, E; Murakami, T

    2007-01-01

    We investigated resonant coherent excitation of H-like Ar 17+ and He-like Ar 16+ ions planar channeled in a Si crystal under the V-type and ladder-type double resonance conditions. In both cases, we observed distinct enhancement in the ionized fraction of the transmitted ions when the double resonance conditions were satisfied. In the ladder-type configuration, the enhancement indicates that the doubly-excited 2p 2 state of He-like Ar 16+ was produced through doubly-resonant coherent excitation

  9. Depth profiles of H and O in thin films of a-Si:H

    Sie, S.H.; Ryan, C.J.

    1985-01-01

    Detailed depth profiles of hydrogen and oxygen were measured, in thin film samples of a-Si:H produced under varying conditions, using the reaction 1 H( 19 F,α γ) 16 O in the vicinity of the resonance at E( 19 F) = 6.417 MeV to profile hydrogen, and resonant elastic α scattering near the resonance at Eα = 3.0359 MeV to profile oxygen. Contrasting results reflecting the different fabrication conditions were obtained and these were correlated with the measured electrical properties

  10. Transient photoconductive gain in a-Si:H devices and its applications in radiation detection

    Lee, H.K.; Suh, T.S.; Choe, B.Y.; Shinn, K.S.; Perez-Mendez, V.

    1997-01-01

    Using the transient behavior of the photoconductive-gain mechanism, a signal gain in radiation detection with a-Si:H devices may be possible. The photoconductive gain mechanism in two types of hydrogenated amorphous silicon devices, p-i-n and n-i-n configurations, was investigated in connection with applications to radiation detection. Photoconductive gain was measured in two time scales: one for short pulses of visible light ( 2 . Various gain results are discussed in terms of the device structure, applied bias and dark-current density. (orig.)

  11. A forward bias method for lag correction of an a-Si flat panel detector

    Starman, Jared; Tognina, Carlo; Partain, Larry; Fahrig, Rebecca

    2012-01-01

    Purpose: Digital a-Si flat panel (FP) x-ray detectors can exhibit detector lag, or residual signal, of several percent that can cause ghosting in projection images or severe shading artifacts, known as the radar artifact, in cone-beam computed tomography (CBCT) reconstructions. A major contributor to detector lag is believed to be defect states, or traps, in the a-Si layer of the FP. Software methods to characterize and correct for the detector lag exist, but they may make assumptions such as system linearity and time invariance, which may not be true. The purpose of this work is to investigate a new hardware based method to reduce lag in an a-Si FP and to evaluate its effectiveness at removing shading artifacts in CBCT reconstructions. The feasibility of a novel, partially hardware based solution is also examined. Methods: The proposed hardware solution for lag reduction requires only a minor change to the FP. For pulsed irradiation, the proposed method inserts a new operation step between the readout and data collection stages. During this new stage the photodiode is operated in a forward bias mode, which fills the defect states with charge. A Varian 4030CB panel was modified to allow for operation in the forward bias mode. The contrast of residual lag ghosts was measured for lag frames 2 and 100 after irradiation ceased for standard and forward bias modes. Detector step response, lag, SNR, modulation transfer function (MTF), and detective quantum efficiency (DQE) measurements were made with standard and forward bias firmware. CBCT data of pelvic and head phantoms were also collected. Results: Overall, the 2nd and 100th detector lag frame residual signals were reduced 70%-88% using the new method. SNR, MTF, and DQE measurements show a small decrease in collected signal and a small increase in noise. The forward bias hardware successfully reduced the radar artifact in the CBCT reconstruction of the pelvic and head phantoms by 48%-81%. Conclusions: Overall, the

  12. Influence of Deposition Pressure on the Properties of Round Pyramid Textured a-Si:H Solar Cells for Maglev.

    Lee, Jaehyeong; Choi, Wonseok; Lee, Kyuil; Lee, Daedong; Kang, Hyunil

    2016-05-01

    HIT (Heterojunction with Intrinsic Thin-layer) photovoltaic cells is one of the highest efficiencies in the commercial solar cells. The pyramid texturization for reducing surface reflectance of HIT solar cells silicon wafers is widely used. For the low leakage current and high shunt of solar cells, the intrinsic amorphous silicon (a-Si:H) on substrate must be uniformly thick of pyramid structure. However, it is difficult to control the thickness in the traditional pyramid texturing process. Thus, we textured the intrinsic a-Si:H thin films with the round pyramidal structure by using HNO3, HF, and CH3COOH solution. The characteristics of round pyramid a-Si:H solar cells deposited at pressure of 500, 1000, 1500, and 2000 mTorr by PECVD (Plasma Enhanced Chemical Vapor Deposition) was investigated. The lifetime, open circuit voltage, fill factor and efficiency of a-Si:H solar cells were investigated with respect to various deposition pressure.

  13. Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

    Zhang, Jiahua; Chen, Da; Huang, Shihua

    2017-12-01

    The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p+-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I-V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p+-c-Si device. Finally, the device resistive-switching mechanism was analyzed. Project supported by the Zhejiang Provincial Natural Science Foundation of China (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  14. aSi EPIDs for the in-vivo dosimetry of static and dynamic beams

    Piermattei, A.; Cilla, S.; Azario, L.; Greco, F.; Russo, M.; Grusio, M.; Orlandini, L.; Fidanzio, A.

    2015-10-01

    Portal imaging by amorphous silicon (aSi) photodiode is currently the most applied technology for in-vivo dosimetry (IVD) of static and dynamic radiotherapy beams. The strategy, adopted in this work to perform the IVD procedure by aSi EPID, is based on: in patient reconstruction of the isocenter dose and day to day comparison between 2D-portal images to verify the reproducibility of treatment delivery. About 20.000 tests have been carried out in this last 3 years in 8 radiotherapy centers using the SOFTDISO program. The IVD results show that: (i) the procedure can be implemented for linacs of different manufacturer, (ii) the IVD analysis can be obtained on a computer screen, in quasi real time (about 2 min after the treatment delivery) and (iii) once the causes of the discrepancies were eliminated, all the global IVD tests for single patient were within the acceptance criteria defined by: ±5% for the isocenter dose, and PγFisica Nucleare (INFN) and Università Cattolica del S.Cuore (UCSC).

  15. a-Si:H crystallization from isothermal annealing and its dependence on the substrate used

    Rojas-Lopez, M., E-mail: marlonrl@yahoo.com.mx [CIBA-Tlaxcala, Instituto Politecnico Nacional, Tepetitla, Tlax. 90700 (Mexico); Orduna-Diaz, A.; Delgado-Macuil, R.; Gayou, V.L.; Bibbins-Martinez, M. [CIBA-Tlaxcala, Instituto Politecnico Nacional, Tepetitla, Tlax. 90700 (Mexico); Torres-Jacome, A.; Trevino-Palacios, C.G. [INAOE, Tonantzintla, Puebla, Pue. 72000 (Mexico)

    2010-10-25

    We present hydrogenated amorphous silicon (a-Si:H) films which were deposited on two different substrates (glass and mono-crystalline silicon) after an isothermal annealing treatment at 250 deg. C for up to 14 h. The annealed amorphous films were analyzed using atomic force microscopy, Raman and FTIR spectroscopy. Films deposited on glass substrate experienced an amorphous-crystalline phase transition after annealing because of the metal-induced crystallization effect, reaching approximately 70% conversion after 14 h of annealing. An absorption frequency of the TO-phonon mode that varies systematically with the substoichiometry of the silicon oxide in the 1046-1170 cm{sup -1} region was observed, revealing the reactivity of the film with the annealing time. For similar annealing time, films deposited on mono-crystalline silicon substrate remained mainly amorphous with minimal Si-crystalline formation. Therefore, the crystalline formations and the shape of the films surfaces depends on the annealing time as well as on the substrate employed during the deposition process of the a-Si:H film.

  16. Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells

    Pla, J.; Tamasi, M.; Rizzoli, R.; Losurdo, M.; Centurioni, E.; Summonte, C.; Rubinelli, F

    2003-02-03

    A detailed study of the properties of indium tin oxide (ITO) thin films used as antireflecting front electrodes in a-Si/c-Si heterojunction solar cells is presented. The deposition conditions of ITO layers by radiofrequency magnetron sputtering were optimized for heterojunction solar cells applications. The X-ray photoelectron spectroscopy analysis of the deposited films allowed for a correlation between the film composition and the experimental parameters used in the sputtering process. The ITO thickness was optimized considering the thickness of the a-Si emitter layer, its optical characteristics and the heterojunction solar cell spectral response. In our devices, the optimal thickness calculated for the ITO film was in the range 80-95 nm, depending on the solar cell spectral response, and a thickness tolerance of {+-}10 nm was found to be suitable to limit the degradation of the device performance. Finally, device simulation results obtained by the 'Analysis of Microelectronic and Photonic Structures' code are reported.

  17. Formation of a vertical MOSFET for charge sensing in a Si micro-fluidic channel

    Lyu, Hong-Kun; Kim, Dong-Sun; Shin, Jang-Kyoo; Choi, Pyung; Lee, Jong-Hyun; Park, Hey-Jung; Park, Chin-Sung; Lim, Geun-Bae

    2004-01-01

    We have formed a fluidic channel that can be used in micro-fluidic systems and fabricated a 3-dimensional vertical metal-oxide semiconductor field-effect transistor (vertical MOSFET) in the convex corner of a Si micro-fluidic channel by using an anisotropic tetramethyl ammonium hydroxide (TMAH) etching solution. A Au/Cr layer was used for the gate metal and might be useful for detecting charged biomolecules. The electrical characteristics of the vertical MOSFET and its operation as a chemical sensor were investigated. At V DS = -5 V and V GS = -5 V the drain current of the device was -22.5 μA and the threshold voltage was about -1.4 V. A non-planar, non-rectangular vertical MOSFET with a trapezoidal gate was transformed into an equivalent rectangularly based one by using a Schwartz-Christoffel transformation. The LEVEL1 device parameters of the vertical MOSFET were extracted from the measured electrical device characteristics and were used in the SPICE simulation for the vertical MOSFET. The measured and the simulated results for the vertical PMOSFET showed relatively good agreement. When the vertical MOSFET was dipped into a thiol DNA solution, the drain current decreased due to charged biomolecules probably being adsorbed on the gate, which indicates that a vertical MOSFET in a Si micro-fluidic channel might be useful for sensing charged biomolecules.

  18. A fully integrated optical detector with a-Si:H based color photodiodes

    Watty, Krystian; Merfort, Christian; Seibel, Konstantin; Schoeler, Lars; Boehm, Markus [Institute for Microsystem Technologies (IMT), University of Siegen, Hoelderlinstr. 3, 57076 Siegen (Germany)

    2010-03-15

    The fabrication of an electrophoresis separation microchip with monolithic integrated excitation light source and variospectral photodiodes for absorption detection is presented in this paper. Microchip based separation techniques are essential elements in the development of fully integrated micro-total analysis systems ({mu}-TAS). An integrated microfluidic device, like an application specific lab-on-microchip (ALM) (Seibel et al., in: MRS Spring Meeting, San Francisco, USA, 2005 1), includes all components, necessary to perform a chemical analysis on chip and it can be used as a stand-alone unit directly at the point of sampling. Variospectral diodes based on hydrogenated amorphous silicon (a-Si:H) technology allow for advanced optical detection schemes, because the spectral sensitivity of the devices can be tailored to fit the emission of specific fluorescent markers. Important features of a-Si:H variospectral photodiodes are a high dynamic range, a bias-tunable spectral sensitivity and a very good linearity for the separation of mixed color signals. Principle of ALM device. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  19. Visible light communication and indoor positioning using a-SiCH device as receiver

    Vieira, M. A.; Vieira, M.; Louro, P.; Vieira, P.; Fantoni, A.

    2017-08-01

    An indoor positioning system were trichromatic white LEDs are used both for illumination proposes and as transmitters and an optical processor, based on a-SiC:H technology, as mobile receiver is presented. OOK modulation scheme is used, and it provides a good trade-off between system performance and implementation complexity. The relationship between the transmitted data and the received digital output levels is decoded. The system topology for positioning is a self-positioning system in which the measuring unit is mobile. This unit receives the signals of several transmitters in known locations, and has the capability to compute its location based on the measured signals. LED bulbs work as transmitters, sending information together with different IDs related to their physical locations. A triangular topology for the unit cell is analysed. A 2D localization design, demonstrated by a prototype implementation is presented. Fine-grained indoor localization is tested. The received signal is used in coded multiplexing techniques for supporting communications and navigation concomitantly on the same channel. The position is estimated through the visible multilateration metodh using several non-collinear transmitters. The location and motion information is found by mapping position and estimates the location areas. Data analysis showed that by using a pinpin double photodiode based on a a-SiC:H heterostucture as receiver, and RBGLEDs as transmitters it is possible not only to determine the mobile target's position but also to infer the motion direction over time, along with the received information in each position.

  20. A wide-gap a-SiC:H PV-powered electrochromic window coating

    Gao, W.; Lee, S.H.; Xu, Y.; Benson, D.K.; Deb, S.K.; Branz, H.M. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    The authors report on the first monolithic, amorphous-silicon-based, photovoltaic-powered electrochromic window coating. The coating employs a wide bandgap a-Si{sub 1{minus}x}C{sub x}:H n-i-p photovoltaic (PV) cell as a semitransparent power supply, and a Li{sub y}WO{sub 3}/LiAlF{sub 4}/V{sub 2}O{sub 5} electrochromic (EC) device as an optical-transmittance modulator. The EC device is deposited directly on top of a PV cell that coats a glass substrate. The a-Si{sub 1{minus}x}C{sub x}:H PV cell has a Tauc gap of 2.2 eV and a transmittance of 60--80% over a large portion of the visible light spectrum. The authors reduced the thickness of the device to about 600 {angstrom} while maintaining a 1-sun open-circuit voltage of 0.9 V and short-circuit current of 2 mA/cm{sup 2}. The prototype 16 cm{sup 2} PV/EC device modulates the transmittance by more than 60% over a large portion of the visible spectrum. The coloring and bleaching times of the EC device are approximately 1 minute under normal operating conditions ({+-} 1 volt). A brief description of photoelectrochromic windows study is also given.

  1. Signal and noise analysis of a-Si:H radiation detector-amplifier system

    Cho, Gyuseong.

    1992-03-01

    Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was ∼400 MHz and the noise charge ∼1000 electrons at a 1 μsec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of ∼0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB

  2. Signal and noise analysis of a-Si:H radiation detector-amplifier system

    Cho, Gyuseong [Univ. of California, Berkeley, CA (United States)

    1992-03-01

    Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was ~400 MHz and the noise charge ~1000 electrons at a 1 μsec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of ~0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

  3. Signal and noise analysis of a-Si:H radiation detector-amplifier system

    Cho, Gyuseong.

    1992-03-01

    Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was {approximately}400 MHz and the noise charge {approximately}1000 electrons at a 1 {mu}sec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of {approximately}0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

  4. Magnetic lineations in the Central Indian Basin for the period A24-A21: a study in relation to the Indian Ocean Triple junction trace

    KameshRaju, K.A.; Ramprasad, T.

    are identified as anomalies 21 to 25. The magnetic lineation pattern revealed the presence of a new fracture zone at 75 degrees 45'E trending N12 degrees E. This fracture zone runs parallel to the 86 degrees fracture zone and appears to change its direction south...

  5. Outdoor performance analysis of a 1090× point-focus Fresnel high concentrator photovoltaic/thermal system with triple-junction solar cells

    Xu, Ning; Ji, Jie; Sun, Wei; Han, Lisheng; Chen, Haifei; Jin, Zhuling

    2015-01-01

    Graphical abstract: A high concentrator photovoltaic/thermal (HCPV/T) system based on point-focus Fresnel lens has been set up in this work. The concentrator has a geometric concentration ratio of 1090× and uniform irradiation distribution can be obtained on solar cells. The system produces both electricity and heat. Performance of the system has been investigated based on the outdoor measurement in a clear day. The HCPV/T system presents an instantaneous electrical efficiency of 28% and a highest instantaneous thermal efficiency of 54%, respectively. Experimental results show that direct irradiation affects the electrical performance of the system dominantly. Fitting results of electrical performance offer simple and reliable methods to analyze the system performance. - Highlights: • A point-focus Fresnel lens photovoltaic/thermal system is proposed and studied. • The system presents an instantaneous electrical efficiency of 28%. • The system has a highest instantaneous thermal efficiency of 54%. • Direct irradiation has the dominant effect on the electrical performance. • Fitting results offer simple and reliable methods to analyze system performances. - Abstract: A high concentrator photovoltaic/thermal (HCPV/T) system based on point-focus Fresnel lens has been set up in this work. The concentrator has a geometric concentration ratio of 1090× and uniform irradiation distribution can be obtained on solar cells. The system produces both electricity and heat. Performance of the system has been investigated based on the outdoor measurement in a clear day. The HCPV/T system presents an instantaneous electrical efficiency of 28% and a highest instantaneous thermal efficiency of 54%, which means the overall efficiency of the system can be more than 80%. A mathematical model for calculating cell temperature is proposed to solve difficult measurement of cell temperature in a system. Moreover, characteristics of electrical performance under various direct irradiation intensity and cell temperature are also studied. The results show that direct irradiation affects the electrical performance of the system dominantly. Fitting results of electrical performance offer simple and reliable methods to analyze the system performance

  6. Ocean deformation processes at the Caribbean-North America-South America triple junction: Initial results of the 2007 ANTIPLAC marine survey

    Benard, F.; Deville, E.; Le Drezen, E.; Loubrieu, B.; Maltese, L.; Patriat, M.; Roest, W.; Thereau, E.; Umber, M.; Vially, R.

    2007-12-01

    Marine geophysical data (multibeam and seismic lines) acquired in 2007 (ANTIPLAC survey) in the North-South Americas-Caribbean triple point (Central Atlantic, Barracuda and Tiburon ridges area), provide information about the structure, the tectonic processes and the timing of the deformation in this large diffuse zone of polyphase deformation. The deformation of the plate boundary between the north and south Americas is distributed on several structures located in the Atlantic plain, at the front of the Barbados accretionary prism. In this area of deformation of the Atlantic oceanic lithosphere, the main depressions and transform troughs are filled by Late Pliocene-Pleistocene turbidite sediments, especially in the Barracuda trough, north of Barracuda ridge. These sediments are not issued from the Lesser Antilles volcanic arc but they are sourced from the East, probably by the Orinoco turbidite distal system, through channels transiting in the Atlantic abyssal plain. These Late Pliocene- Quaternary sediments show locally spectacular evidences of syntectonic deformation. It can be shown notably that Barracuda ridge includes a pre-existing transform fault system which has been folded and uplifted very recently during Pleistocene times. This recent deformation has generate relieves up to 2 km high with associated erosion processes notably along the northern flank the Barracuda ridge. The subduction of these recently deformed ridges induces deformation of earlier structures within the Barbados accretionary prism. These asperities within the Atlantic oceanic lithosphere which is subducted in the Lesser Antilles active margin are correlated with the zone of intense seismic activity below the volcanic arc.

  7. Valence and conduction band offsets at low-k a-SiO{sub x}C{sub y}:H/a-SiC{sub x}N{sub y}:H interfaces

    King, Sean W., E-mail: sean.king@intel.com; Brockman, Justin; French, Marc; Jaehnig, Milt; Kuhn, Markus [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); French, Benjamin [Ocotillo Materials Laboratory, Intel Corporation, Chandler, Arizona 85248 (United States)

    2014-09-21

    In order to understand the fundamental electrical leakage and reliability failure mechanisms in nano-electronic low-k dielectric/metal interconnect structures, we have utilized x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy to determine the valence and conduction band offsets present at interfaces between non-porous and porous low-k a-SiO{sub x}C{sub y}:H interlayer dielectrics and a-SiC{sub x}N{sub y}:H metal capping layers. The valence band offset for such interfaces was determined to be 2.7±0.2 eV and weakly dependent on the a-SiOC:H porosity. The corresponding conduction band offset was determined to be 2.1±0.2 eV. The large band offsets indicate that intra metal layer leakage is likely dominated by defects and trap states in the a-SiOC:H and a-SiCN:H dielectrics.

  8. High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

    Meredith, Roger D.; Neudeck, Philip G.; Ponchak, George E.; Beheim, Glenn M.; Scardelletti, Maximilian; Jordan, Jennifer L.; Chen, Liang-Yu; Spry, David J.; Krawowski, Michael J.; Hunter, Gary W.

    2011-01-01

    In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

  9. Improvement of thick a-Si radiation detectors by field profile tailoring

    Drewery, J.S.; Cho, G.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1992-04-01

    Application of thick (∼50 μm) a-Si p-i-n diodes as a direct radiation detector for minimum ionizing particles is hampered by the need to apply large bias voltages in order fully to deplete the detecting intrinsic layer, which typically contains 5 - 10 x 10 14 ionizable dangling bonds per CM 3 . By insertion of thin p-type layers at intervals within the intrinsic layer, the required depletion voltage can be reduced by a factor of at least 1/(n+l) where n is the number of layers inserted. This principle is demonstrated for devices approximately 12μm in thickness. It is shown that electron losses within the p type layer can be kept to minimum by choice of a low doping concentration for the introduced players

  10. Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface

    Yagyu, Kazuma; Tochihara, Hiroshi; Tomokage, Hajime; Suzuki, Takayuki; Tajiri, Takayuki; Kohno, Atsushi; Takahashi, Kazutoshi

    2014-01-01

    Cu atoms deposited on a zero layer graphene grown on a SiC(0001) substrate, intercalate between the zero layer graphene and the SiC substrate after the thermal annealing above 600 °C, forming a Cu-intercalated single layer graphene. On the Cu-intercalated single layer graphene, a graphene lattice with superstructure due to moiré pattern is observed by scanning tunneling microscopy, and specific linear dispersion at the K ¯ point as well as a characteristic peak in a C 1s core level spectrum, which is originated from a free-standing graphene, is confirmed by photoemission spectroscopy. The Cu-intercalated single layer graphene is found to be n-doped

  11. Improvement of the quality of a-SiGe:H films

    Sadamoto, M.; Saitoh, K.; Ishiguro, N.; Yanagawa, N.; Tanaka, H.; Fukuda, S.; Ashida, Y.; Fukuda, N. [Central Research Institute, Mitsui Toatsu Chemicals Inc., Sakae-ku, Yokohama (Japan)

    1996-05-15

    The ADHT (alternately repeating deposition and hydrogen plasma treatment) method and the DLE (deposition of low emission) method were developed for the formation of high quality a-SiGe:H (hydrogenated amorphous silicon germanium) films. High photosensitivity was obtained by the ADHT and DLE methods, with a wide range of optical bandgaps between 1.3 eV and 1.7 eV, higher than those of films obtained by the hydrogen dilution method. It was also proved that these films were solar cell device-grade. A conversion efficiency of 8.9% was obtained with a bandgap of 1.6 eV by the ADHT method, and a conversion efficiency of 8.2% and a short circuit current of 20.4 mA/cm{sup 2} were obtained with a bandgap of 1.47 eV by the DLE method

  12. Mechanical Robustness of FPA in a-Si Microbolometer with Fine Pitch

    Hee Yeoun Kim

    2011-04-01

    Full Text Available Microbolometer array sensors with fine pitch pixel arrays have been implemented using amorphous silicon supported by two contact pads. Simple beam test structures were fabricated and characterized for the purpose of designing a focal plane with geometrical flatness. As the beam length decreased, the effect of beam width on the bending was minimized. Membrane deformation of focal plane in a real pixel showed downward curvature by residual stress of a-Si and Ti layer. The tilting deformation was caused by the misalign effect of contact pad and confirmed by FEA (Finite Element Analysis simulation results. The electro-optical properties of bolometer have been measured to be noise equivalent temperature difference (NETD = 145 mK, temperature Coefficient of Resistance (TCR = −2 %/K, and thermal time constant = 1.99 ms.

  13. Correlation between minority carrier diffusion length and microstructure in a-Si:H thin films

    Conte, G.; Fameli, G.; Nobile, G.; Rubino, A.; Terzini, E.; Villani, F.

    1993-01-01

    The aim of this work is to investigate the opto-electronic properties of amorphous hydrogenated silicon (a-Si:H). The deposition temperature was used as a driving force to modify the morphology and bonded hydrogen distribution. The influence of the hydrogen microstructure on the carrier m-t products was examined. The m-t products, for both carriers, were evaluated from the diffusion length measurement, by using the Steady State Photocarrier Grating (SSPG) technique, and from the photoconductivity in the steady state condition (SSPC). The m-t products were correlated with the defect density and Fermi level position. The effects of the defect density on the Fermi level position were examined within the framework of a defect pool model in order to justify the consistency of the results

  14. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  15. Design, fabrication and characterization of an a-Si:H-based UV detector for sunburn applications

    Bayat, Khadijeh; Vygranenko, Yuriy; Sazonov, Andrei; Farrokh-Baroughi, Mahdi

    2006-12-01

    A thin-film a-Si:H pin detector was developed for selective detection of UVA (320-400 nm) radiation. In order for the fabrication technology to be transferable onto flexible substrates, all of the processing steps were conducted at temperatures less than 125 °C. The measured saturation current as low as 2 pA cm-2 and the ideality factor of 1.47 show that the pin diodes have a good quality i-layer as well as p-i and n-i interfaces. The film thicknesses were optimized to suppress the detector sensitivity in the visible spectral range, and the peak of spectral response was observed at 410 nm. The selectivity estimated from the ratio of the photocurrent generated by UVA absorption to the total photocurrent is 21%.

  16. Charge-sensitive poly-silicon TFT amplifiers for a-Si:H pixel particle detectors

    Cho, G.; Perez-Mendez, V.; Hack, M.; Lewis, A.

    1992-04-01

    Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼ 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec

  17. Deep-Burn MHR Neutronic Analysis with a SiC-Gettered TRU Kernel

    Jo, Chang Keun; Noh, Jae Man; Kim, Yong Hee; Venneric, F.

    2010-01-01

    This paper is focused on the nuclear core design of a DB-MHR (Deep Burn-Modular Helium Reactor) core loaded with a SiC-gettered TRU fuel. The SiC oxygen getter is added to reduce the CO pressure in the buffer zone of TRISO. In the paper, the cycle length, reactivity swing, discharged burnup, and the burning rate of plutonium were calculated for the DB-MHR. Also, impacts of uranium addition to the TRU kernel were investigated. Recently, the decay heat of TRU fueled DB core was found to be highly dependent on the TRU loading: the higher the loading, the higher the decay heat. The high decay heat of TRU fuel may lead to unacceptably high peak fuel temperature during an LPCC (Low Pressure Conduction Cooling) accident. Thus, we tried to minimize the decay heat of the core for a minimal peak fuel temperature during LPCC

  18. Magnetohydrodynamic (MHD) considerations for liquid metal blanket and a SiC/SiC composite structure

    Scholz, R.; Greeff, J. de; Vinche, C.

    1998-01-01

    The electrical conductivity was measured on SiC/SiC composite specimens, in the as-received conditions and after neutron irradiation, for temperatures between 20 deg. C and 1000 deg. C. The tests were aimed at estimating the magnitude of MHD effects in liquid metal blankets and a SiC/SiC composites structure. The electrical conductivity of the unirradiated samples increased continuously with temperature and ranged from 330 (Ω m) -1 at 20 deg. C to 550 (Ω m) -1 at 1000 deg.C. The irradiation reduced only slightly the magnitude of σ indicating the materials tested cannot be treated as an electrical insulator in a MHD analysis for liquid metal blankets. (authors)

  19. Magnetohydrodynamic (MHD) considerations for liquid metal blanket and a SiC/SiC composite structure

    Scholz, R.; Greeff, J. de; Vinche, C. [Commission Europeenne Community, JRC, Vatican City State, Holy See (Italy)

    1998-07-01

    The electrical conductivity was measured on SiC/SiC composite specimens, in the as-received conditions and after neutron irradiation, for temperatures between 20 deg. C and 1000 deg. C. The tests were aimed at estimating the magnitude of MHD effects in liquid metal blankets and a SiC/SiC composites structure. The electrical conductivity of the unirradiated samples increased continuously with temperature and ranged from 330 ({omega} m){sup -1} at 20 deg. C to 550 ({omega} m){sup -1} at 1000 deg.C. The irradiation reduced only slightly the magnitude of {sigma} indicating the materials tested cannot be treated as an electrical insulator in a MHD analysis for liquid metal blankets. (authors)

  20. Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

    Fu, Y Q; Milne, S B; Luo, J K; Flewitt, A J; Wang, L; Miao, J M; Milne, W I

    2006-01-01

    A variable RF capacitor with a-Si:H (doped with phosphine) cantilevers as the top electrode were designed and fabricated. Because the top multi-cantilever electrodes have different lengths, increasing the applied voltage pulled down the cantilever beams sequentially, thus realizing a gradual increase of the capacitance with the applied voltage. A high-k material, H f O 2 , was used as an insulating layer to increase the tuning range of the capacitance. The measured capacitance from the fabricated capacitor was much lower and the pull-in voltage was much higher than those from theoretical analysis because of incomplete contact of the two electrodes, existence of film differential stresses and charge injection effect. Increase of sweeping voltage rate could significantly shift the pull-in voltage to higher values due to the charge injection mechanisms

  1. Electric measurements of PV heterojunction structures a-SiC/c-Si

    Perný, Milan; Šály, Vladimír; Janíček, František; Mikolášek, Miroslav; Váry, Michal; Huran, Jozef

    2018-01-01

    Due to the particular advantages of amorphous silicon or its alloys with carbon in comparison to conventional crystalline materials makes such a material still interesting for study. The amorphous silicon carbide may be used in a number of micro-mechanical and micro-electronics applications and also for photovoltaic energy conversion devices. Boron doped thin layers of amorphous silicon carbide, presented in this paper, were prepared due to the optimization process for preparation of heterojunction solar cell structure. DC and AC measurement and subsequent evaluation were carried out in order to comprehensively assess the electrical transport processes in the prepared a-SiC/c-Si structures. We have investigated the influence of methane content in deposition gas mixture and different electrode configuration.

  2. Single OR molecule and OR atomic circuit logic gates interconnected on a Si(100)H surface

    Ample, F; Joachim, C; Duchemin, I; Hliwa, M

    2011-01-01

    Electron transport calculations were carried out for three terminal OR logic gates constructed either with a single molecule or with a surface dangling bond circuit interconnected on a Si(100)H surface. The corresponding multi-electrode multi-channel scattering matrix (where the central three terminal junction OR gate is the scattering center) was calculated, taking into account the electronic structure of the supporting Si(100)H surface, the metallic interconnection nano-pads, the surface atomic wires and the molecule. Well interconnected, an optimized OR molecule can only run at a maximum of 10 nA output current intensity for a 0.5 V bias voltage. For the same voltage and with no molecule in the circuit, the output current of an OR surface atomic scale circuit can reach 4 μA.

  3. Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma

    Mejia H, J.A.

    1996-01-01

    Hydrogenated amorphous silicon (a-Si:H) films have been widely applied to semiconductor devices, such as thin film transistors, solar cells and photosensitive devices. In this work, the first Si-H-Cl alloys (obtained at the National Institute for Nuclear Research of Mexico) were formed by a microwave electron cyclotron resonance (Ecr) plasma CVD method. Gaseous mixtures of silicon tetrachloride (Si Cl 4 ), hydrogen and argon were used. The Ecr plasma was generated by microwaves at 2.45 GHz and a magnetic field of 670 G was applied to maintain the discharge after resonance condition (occurring at 875 G). Si and Cl contents were analyzed by Rutherford Backscattering Spectrometry (RBS). It was found that, increasing proportion of Si Cl 4 in the mixture or decreasing pressure, the silicon and chlorine percentages decrease. Optical gaps were obtained by spectrophotometry. Decreasing temperature, optical gap values increase from 1.4 to 1.5 eV. (Author)

  4. Noise in a-Si:H p-i-n detector diodes

    Cho, G.; Qureshi, S.; Drewery, J.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1991-10-01

    Noise of a-Si:H p-i-n diodes (5 ∼ 50 μm thick) under reverse bias was investigated. The current dependent 1/f type noise was found to be the main noise component at high bias. At low bias the thermal noise from a series resistance of the p-layer and of the metallic contacts is the dominant noise source which is unrelated to the reverse current through the diode. The noise associated with the p-layer resistance decreased significantly on annealing under reverse bias, reducing the total zero bias noise by a factor 2 approximately. The noise recovered to the original value on subsequent annealing without bias. In addition to the resistive noise there seems to be a shaping time independent noise component at zero biased diodes

  5. Understanding the Thermal Stability of Silver Nanoparticles Embedded in a-Si

    Gould, Anna L.; Kadkhodazadeh, Shima; Wagner, Jakob Birkedal

    2015-01-01

    properties of the amorphous-Si environment are important as well as incomplete packing of the Ag nanoparticle surfaces. These factors affect the melting temperature, causing some parts of the Ag nanoparticles to dissolve preferentially and other areas to remain stable at high temperatures.......The inclusion of silver plasmonic nanoparticles in silicon is highly relevant for photovoltaics as it may enhance optical absorption. We report an investigation of the stability of such pristine silver nanoparticles embedded in a-Si upon heat treatment. We have investigated the morphological...... changes via in situ and ex situ high-resolution and high-angle annular dark-field scanning transmission electron microscopy (HRTEM and HAADF STEM). The melting of Ag particles and subsequent interdiffusion of Ag and Si atoms are strongly related to the size of the Ag nanoparticles, as well as the presence...

  6. Nanofabrication on a Si surface by slow highly charged ion impact

    Tona, Masahide; Watanabe, Hirofumi; Takahashi, Satoshi; Nakamura, Nobuyuki; Yoshiyasu, Nobuo; Sakurai, Makoto; Terui, Toshifumi; Mashiko, Shinro; Yamada, Chikashi; Ohtani, Shunsuke

    2007-01-01

    We have observed surface chemical reactions which occur at the impact sites on a Si(1 1 1)-(7 x 7) surface and a highly oriented pyrolytic graphite (HOPG) surface bombarded by highly charged ions (HCIs) by using a scanning tunneling microscope (STM). Crater structures are formed on the Si(1 1 1)-(7 x 7) surface by single I 50+ -impacts. STM-observation for the early step of oxidation on the surface suggests that the impact site is so active that dangling bonds created by HCI impacts are immediately quenched by reaction with residual gas molecules. We show also the selective adsorption of organic molecules at a HCI-induced impact site on the HOPG surface

  7. Electroluminescence of a-Si/c-Si heterojunction solar cells after high energy irradiation

    Ferrara, Manuela

    2009-11-24

    The crystalline silicon as absorber material will certainly continue to dominate the market for space applications of solar cells. In the contribution under consideration the applicability of a-Si:H/c-Si heterojunction solar cells in space has been tested by the investigation of the cell modification by high energy protons and comparing the results to the degradation of homojunction crystalline silicon reference cells. The investigated solar cells have been irradiated with protons of different energies and doses. For all investigated solar cells the maximum damage happens for an energy of about 1.7 MeV and is mainly due to the decrease of the effective minority carrier diffusion length in the crystalline silicon absorber. Simulations carried out by AFORS-HET, a heterojunction simulation program, also confirmed this result. The main degradation mechanism for all types of devices is the monotonically decreasing charge carrier diffusion length in the p-type monocrystalline silicon absorber layer. For the heterojunction solar cell an enhancement of the photocurrent in the blue wavelength region has been observed but only in the case of heterojunction solar cell with intrinsic a-Si:H buffer layer. Additionally to the traditional characterization techniques the electroluminescence technique used for monitoring the modifications of the heteroluminescence technique used for monitoring the modifications of the heterointerface between amorphous silicon and crystalline silicon in solar cells after proton irradiation. A direct relation between minority carrier diffusion length and electroluminescence quantum efficiency has been observed but also details of the interface modification could be monitored by this technique.

  8. Influence of base pressure and atmospheric contaminants on a-Si:H solar cell properties

    Woerdenweber, J.; Schmitz, R.; Mueck, A.; Zastrow, U.; Niessen, L.; Gordijn, A.; Carius, R.; Beyer, W.; Rau, U.; Merdzhanova, T.; Stiebig, H.

    2008-01-01

    The influence of atmospheric contaminants oxygen and nitrogen on the performance of thin-film hydrogenated amorphous silicon (a-Si:H) solar cells grown by plasma-enhanced chemical vapor deposition at 13.56 MHz was systematically investigated. The question is addressed as to what degree of high base pressures (up to 10 -4 Torr) are compatible with the preparation of good quality amorphous silicon based solar cells. The data show that for the intrinsic a-Si:H absorber layer exists critical oxygen and nitrogen contamination levels (about 2x10 19 atoms/cm 3 and 4x10 18 atoms/cm 3 , respectively). These levels define the minimum impurity concentration that causes a deterioration in solar cell performance. This critical concentration is found to depend little on the applied deposition regime. By enhancing, for example, the flow of process gases, a higher base pressure (and leak rate) can be tolerated before reaching the critical contamination level. The electrical properties of the corresponding films show that increasing oxygen and nitrogen contamination results in an increase in dark conductivity and photoconductivity, while activation energy and photosensitivity are decreased. These effects are attributed to nitrogen and oxygen induced donor states, which cause a shift of the Fermi level toward the conduction band and presumably deteriorate the built-in electric field in the solar cells. Higher doping efficiencies are observed for nitrogen compared to oxygen. Alloying effects (formation of SiO x ) are observed for oxygen contaminations above 10 20 atoms/cm 3 , leading to an increase in the band gap

  9. Loss Model and Efficiency Analysis of Tram Auxiliary Converter Based on a SiC Device

    Hao Liu

    2017-12-01

    Full Text Available Currently, the auxiliary converter in the auxiliary power supply system of a modern tram adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module commercially available from Cree, an auxiliary converter using all SiC devices is now possible. A SiC auxiliary converter prototype is developed during this study. The author(s derive the loss calculation formula of the SiC auxiliary converter according to the system topology and principle and each part loss in this system can be calculated based on the device datasheet. Then, the static and dynamic characteristics of the SiC MOSFET module used in the system are tested, which aids in fully understanding the performance of the SiC devices and provides data support for the establishment of the PLECS loss simulation model. Additionally, according to the actual circuit parameters, the PLECS loss simulation model is set up. This simulation model can simulate the actual operating conditions of the auxiliary converter system and calculate the loss of each switching device. Finally, the loss of the SiC auxiliary converter prototype is measured and through comparison it is found that the loss calculation theory and PLECS loss simulation model is valuable. Furthermore, the thermal images of the system can prove the conclusion about loss distribution to some extent. Moreover, these two methods have the advantages of less variables and fast calculation for high power applications. The loss models may aid in optimizing the switching frequency and improving the efficiency of the system.

  10. Metastability of a-SiO{sub x}:H thin films for c-Si surface passivation

    Serenelli, L., E-mail: luca.serenelli@enea.it [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Martini, L. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Imbimbo, L. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy); DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Asquini, R. [DIET University of Rome “Sapienza”, via Eudossiana 18, 00184 Rome (Italy); Menchini, F.; Izzi, M.; Tucci, M. [ENEA Research centre “Casaccia”, via Anguillarese 301, 00123 Rome (Italy)

    2017-01-15

    Highlights: • a-SiO{sub x}:H film deposition by RF-PECVD is optimized from SiH{sub 4}, CO{sub 2} and H{sub 2} gas mixture. • Metastability of a-SiO{sub x}:H/c-Si passivation is investigated under thermal annealing and UV exposure. • A correlation between passivation metastability and Si−H bonds is found by FTIR spectra. • A metastability model is proposed. - Abstract: The adoption of a-SiO{sub x}:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiN{sub x} on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiO{sub x}:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Si−H and Si−O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm{sup 2}. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiO{sub x}:H/c-Si/a-SiO{sub x}:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiO{sub x} passivation properties, was furthermore considered. In

  11. Human serum albumin (HSA) adsorption onto a-SiC:H thin films deposited by hot wire chemical vapor deposition

    Swain, Bibhu P.

    2006-01-01

    In the present paper, we report the study of the adsorption behavior of human serum albumin (HSA) onto surfaces of a-SiC:H thin films deposited by using the hot wire chemical vapor deposition (HWCVD) technique. The surface composition and surface energy of the various substrates as well as the evaluation of the adsorbed amount of protein has been carried out by means of X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy, AFM and contact angle measurements. At the immediate effect of HSA interaction with a-SiC:H films N is adsorbed on the surface and stabilized after 3 days. Preliminary observation found that Si and O atom are desorbed from the surface while C and N set adsorbed to the surface of the a-SiC:H film

  12. Human serum albumin (HSA) adsorption onto a-SiC:H thin films deposited by hot wire chemical vapor deposition

    Swain, Bibhu P. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Bombay (India) and Samtel Centre for Display Technologies, Indian Institute of Technology Kanpur, India, Kanpur 208016 (India)]. E-mail: bibhup@iitb.ac.in

    2006-12-15

    In the present paper, we report the study of the adsorption behavior of human serum albumin (HSA) onto surfaces of a-SiC:H thin films deposited by using the hot wire chemical vapor deposition (HWCVD) technique. The surface composition and surface energy of the various substrates as well as the evaluation of the adsorbed amount of protein has been carried out by means of X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy, AFM and contact angle measurements. At the immediate effect of HSA interaction with a-SiC:H films N is adsorbed on the surface and stabilized after 3 days. Preliminary observation found that Si and O atom are desorbed from the surface while C and N set adsorbed to the surface of the a-SiC:H film.

  13. The analysis of structural and electronic environments of silicon network in HWCVD deposited a-SiC:H films

    Swain, Bibhu P.

    2007-01-01

    Hydrogenated amorphous silicon carbon alloys (a-SiC:H) films were deposited by hot wire chemical vapour deposition (HWCVD) using SiH 4 and C 2 H 2 as precursor gases. a-SiC:H films were characterized by Fourier Transform Infrared (FTIR) spectroscopy, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Solid-state plasmon of Si network shifts from 19.2 to 20.5 eV by varying C 2 H 2 flow rate from 2 to 10 sccm. Incorporation of carbon content changes the valence band structure and s orbital is more dominant than sp and p orbital with carbon incorporation

  14. Comparative assessment of 3.3kV/400A SiC MOSFET and Si IGBT power modules

    Ionita, Claudiu; Nawaz, Muhammad; Ilves, Kalle

    2017-01-01

    In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si ...... the pulse duration was increased to 4 μs, where a short-circuit energy of 9.1 J was obtained. The cause of the failure is the thermal runaway leading to a drain-source short....

  15. Compositional study of glow-discharge A-SiC:H films for window layer of solar cells

    Imura, T; Hiraki, A

    1983-10-01

    A series of compositional studies on various types of amorphous silicon-carbon-hydrogen alloy (a-SiC:H) were performed by means of Auger electron spectroscopy (AES) and infrared spectroscopy (IR). The difference between CH4 and C2H4 as a carbon source was examined. From the infrared absorption study it is shown that C2H4-based a-SiC:H films contain carbons as -C2H5 and -CH3,, whereas CH4-based ones as tetrahedral atoms. These results will serve to elucidate the fabrication problems of solar cells. 14 references.

  16. Investigation of the dosimetric properties of an a-Si flat panel epid

    Fielding, A.L.; Jahangir, S.T.

    2004-01-01

    Full text: Electronic portal imaging devices (EPIDs) are primarily used as an electronic replacement for film to verify the set-up of radiotherapy patients based on imaged anatomy. There has recently been much interest in the use of amorphous silicon (a-Si) flat panel EPIDs for dosimetric verification in radiotherapy. The work presented here has been carried out to determine their suitability for dosimetric applications by investigating some of the basic response characteristics and the implications these might have. The measurements reported in this paper were performed using 6-MV photon beams from an Elekta Precise linear accelerator fitted with Elekta iViewGT amorphous silicon flat panel EPIDs. Measurements were performed to investigate the response of the EPID as a function of exposure and field size. Similar measurements were made with an ionisation chamber for comparison. Further measurements were carried out to investigate the response of the EPID to multiple low dose exposures (e.g. 5x2 MU) such as might be encountered in Intensity Modulated Radiotherapy (IMRT). This was compared with the response to a single high dose exposure (e.g. 10 MU) and repeated for a range of exposures. The results show the response of the EPID, to a good approximation, to be linear with dose over the range of 1 -200 MU. However, 'under-responses' in the EPID of up to 5% were seen at the lowest exposures. For multiple low dose segments the sum of the EPID responses was found to be less than the response to the same total exposure in a single large segment. This effect reduces with increase in the magnitude of the low dose segments. The variation in EPID response with field size was found to be greater than that indicated by the ionisation chamber. The results show that the a-Si detector responds to dose, to a good approximation, in a linear manner. The EPID under-response at low doses is thought to be related to the so called ghosting effect. Each image frame has a residual

  17. Research on stable, high-efficiency, amorphous silicon multijunction modules. Annual subcontract report, 1 May 1991--30 April 1992

    Catalano, A.; Bennett, M.; Chen, L.; D`Aiello, R.; Fieselmann, B.; Li, Y.; Newton, J.; Podlesny, R.; Yang, L. [Solarex Corp., Newtown, PA (United States). Thin Film Div.

    1992-08-01

    This report describes work to demonstrate a multijunction module with a ``stabilized`` efficiency (600 h, 50{degrees}C, AM1.5) of 10.5%. Triple-junction devices and modules using a-Si:H alloys with carbon and germanium were developed to meet program goals. ZnO was used to provide a high optical transmission front contact. Proof of concept was obtained for several important advances deemed to be important for obtaining high (12.5%) stabilized efficiency. They were (1) stable, high-quality a-SiC:H devices and (2) high-transmission, textured ZnO. Although these developments were not scaled up and included in modules, triple-junction module efficiencies as high as 10.85% were demonstrated. NREL measured 9.62% and 9.00% indoors and outdoors, respectively. The modules are expected to lose no more than 20% of their initial performance. 28 refs.

  18. New a-Si:H photo-detectors for long-term charge storage

    Lee, H.; Cho, G.; Drewery, J.S.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Perez-Mendez, V.; Wildermuth, D.

    1993-04-01

    Using the high light absorption properties of amorphous silicon, we developed a new device configuration that can detect photons and store the induced charges for relatively long time. This device, coupled to a scintillator such as CsI(Tl) in an array form, could be used as a scintillation camera, or for long-term photo-detection such as radionuclide labeled chromatography. The detector has a simple sandwich structure consisting of a scintillator followed by a top metal layer, p-i-n layers of hydrogenated amorphous silicon (a-Si:H), a second metal layer, a thin insulating layer and a bottom metal layer. The electron-hole pairs generated in the i-layer by the interaction with the incident light will be separated by the imposed electric field and be stored in the central metal-insulator interface. Readout will be done by switching the external bias to ground after the storage time, which depends on the needs for the specific application. Prototype devices were fabricated and tested. The performances of the devices were analyzed in connection with the storage time and the background signal produced by the thermally generated charges

  19. Trapping time of excitons in Si nanocrystals embedded in a SiO2 matrix

    de Jong, E. M. L. D.; de Boer, W. D. A. M.; Yassievich, I. N.; Gregorkiewicz, T.

    2017-05-01

    Silicon (Si) nanocrystals (NCs) are of great interest for many applications, ranging from photovoltaics to optoelectonics. The photoluminescence quantum yield of Si NCs dispersed in SiO2 is limited, suggesting the existence of very efficient processes of nonradiative recombination, among which the formation of a self-trapped exciton state on the surface of the NC. In order to improve the external quantum efficiency of these systems, the carrier relaxation and recombination need to be understood more thoroughly. For that purpose, we perform transient-induced absorption spectroscopy on Si NCs embedded in a SiO2 matrix over a broad probe range for NCs of average sizes from 2.5 to 5.5 nm. The self-trapping of free excitons on surface-related states is experimentally and theoretically discussed and found to be dependent on the NC size. These results offer more insight into the self-trapped exciton state and are important to increase the optical performance of Si NCs.

  20. A SiPM-based scintillator prototype for the upgrade of the Pierre Auger Observatory

    Schumacher, Johannes; Bretz, Thomas; Hebbeker, Thomas; Kemp, Julian; Meissner, Rebecca; Middendorf, Lukas; Niggemann, Tim; Peters, Christine [III. Physikalisches Institut A, RWTH Aachen University (Germany); Collaboration: Pierre-Auger-Collaboration

    2016-07-01

    Plastic scintillator-based detectors are simple and yet powerful instruments, commonly used in particle physics experiments. These detectors are also planned to be installed at the Pierre Auger Observatory as part of the upgrade called AugerPrime. Here, a single detector module will consist of several large-sized scintillator bars. Embedded wavelength shifting fibres read out the scintillation light and are coupled to a single photo-sensitive device. We investigate the application of silicon photomultipliers (SiPMs) in this scope, which benefits from high photon detection efficiency and stability. We show the performance of a SiPM-based prototype device installed in the 2 m{sup 2} detector ASCII - an early prototype of the scintillating detector planned for AugerPrime. We focus on the electronics, the optical coupling and the in situ calibration. As ASCII has been operating with SiPMs for several months now, we also highlight first high-energy events seen in coincidence with the Surface Detector of the Pierre Auger Observatory.

  1. STM investigation of epitaxial Si growth for the fabrication of a Si-based quantum computer

    Oberbeck, Lars; Hallam, Toby; Curson, Neil J.; Simmons, Michelle Y.; Clark, Robert G

    2003-05-15

    We investigate the morphology of epitaxial Si layers grown on clean and on hydrogen terminated Si(0 0 1) to explore the growth strategy for the fabrication of a Si-based quantum computer. We use molecular beam epitaxy to deposit 5 monolayers of silicon at a temperature of 250 deg. C and scanning tunnelling microscopy to image the surface at room temperature after growth and after various rapid annealing steps in the temperature range of 350-600 deg. C. The epitaxial layer grown on the hydrogenated surface shows a significantly higher surface roughness due to a lower mobility of silicon surface atoms in the presence of hydrogen. Annealing at temperatures {>=}550 deg. C reduces the roughness of both epitaxial layers to the value of a clean silicon surface. However, the missing dimer defect density of the epitaxial layer grown on the hydrogenated surface remains higher by a factor of two compared to the layer grown on clean Si(0 0 1). Our results suggest a quantum computer growth strategy in which the hydrogen resist layer is desorbed before the epitaxial silicon layer is grown at low temperature to encapsulate phosphorus quantum bits.

  2. In situ observation of mechanical damage within a SiC-SiC ceramic matrix composite

    Saucedo-Mora, L.; Lowe, T.; Zhao, S.; Lee, P.D.; Mummery, P.M.; Marrow, T.J.

    2016-01-01

    SiC-SiC ceramic matrix composites are candidate materials for fuel cladding in Generation IV nuclear fission reactors and as accident tolerant fuel clad in current generation plant. Experimental methods are needed that can detect and quantify the development of mechanical damage, to support modelling and qualification tests for these critical components. In situ observations of damage development have been obtained of tensile and C-ring mechanical test specimens of a braided nuclear grade SiC-SiC ceramic composite tube, using a combination of ex situ and in situ computed X-ray tomography observation and digital volume correlation analysis. The gradual development of damage by matrix cracking and also the influence of non-uniform loading are examined. - Highlights: • X-ray tomography with digital volume correlation measures 3D deformation in situ. • Cracking and damage in the microstructure can be detected using the strain field. • Fracture can initiate from the monolithic coating of a SiC-SiC ceramic composite.

  3. Amplitude and timing properties of a Geiger discharge in a SiPM cell

    Popova, E., E-mail: elenap73@mail.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Kashirskoe Shosse 31 (Russian Federation); Buzhan, P.; Pleshko, A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Kashirskoe Shosse 31 (Russian Federation); Vinogradov, S. [University of Liverpool and Cockcroft Institute, Sci-Tech Daresbury, Keckwick Lane, Warrington WA4 4AD, Cheshire (United Kingdom); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospect 53, Moscow 119991 (Russian Federation); Stifutkin, A.; Ilyin, A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Kashirskoe Shosse 31 (Russian Federation); Besson, D. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Kashirskoe Shosse 31 (Russian Federation); Department of Physics and Astronomy, University of Kansas, Lawrence, KS 66045-2151 (United States); Mirzoyan, R. [Max-Planck-Institute for Physics, Föhringer Ring 6, 80805 München (Germany)

    2015-07-01

    The amplitude and timing properties of a Geiger discharge in a stand-alone SiPM cell have been investigated in detail. Use of a single stand-alone SiPM cell allows us to perform measurements with better accuracy than the multicell structure of conventional SiPMs. We have studied the dependence of the output charge and amplitude from an SiPM cell illuminated by focused light vs the number of primary photoelectrons. We propose a SPICE model which explains the amplitude over saturation (when the SiPM's amplitude is greater than the sum over all cells) characteristics of SiPM signals for more than one initial photoelectrons. The time resolutions of a SiPM cell have been measured for the case of single (SPTR) and multiphoton light pulses. The Full Width Half Max (FWHM) for SPTR has been found to be at the level of 30 ps for focused and 40 ps for unfocused light (100 μm cell size). - Highlights: • A stand-alone SiPM cell has been investigated in detail. • Amplitude and time properties have been measured with femtosecond 660 nm laser. • SPICE model for a Geiger discharge development has been proposed. • SPTR for a stand-alone 100 μm size SiPM cell has been found to be 40 ps FWHM.

  4. Simulation of redistributive and erosive effects in a-Si under Ar+ irradiation

    Lopez-Cazalilla, A.; Ilinov, A.; Bukonte, L.; Nordlund, K.; Djurabekova, F.; Norris, S.; Perkinson, J. C.

    2018-01-01

    Ion beams are frequently used in industry for composition control of semiconducting materials as well as for surface processing and thin films deposition. Under certain conditions, low- and medium energy ions at high fluences can produce nanoripples and quantum dots on the irradiated surfaces. In the present work, we focus our attention on the study of irradiation of amorphous silicon (a-Si) target with 250 eV and 1 keV Ar+ ions under different angles, taking into special consideration angles close to the grazing incidence. We use the molecular dynamics (MD) method to investigate how much the cumulative displacement of atoms due to the simulated ion bombardment contribute to the patterning effect. The MD results are subsequently analysed using a numerical module Pycraters that allows the prediction of the rippling effect. Ripple wavelengths estimated with Pycraters are then compared with the experimental observations, as well as with the results obtained by using the binary collisions approximation (BCA) method. The wavelength estimation based on the MD results demonstrates a better agreement with the experimental values. In the framework of the utilized analytical model, it can be mainly attributed to the fact that the BCA ignores low energy atomic interactions, which, however, provide an important contribution to the displacement of atoms following an ion impact.

  5. Fluctuation Reduction in a Si Micromechanical Resonator Tuned to Nonlinear Internal Resonance

    Strachan, B. Scott; Czaplewski, David; Chen, Changyao; Dykman, Mark; Lopez, Daniel; Shaw, Steven

    2015-03-01

    We describe experimental and theoretical results on an unusual behavior of fluctuations when the system exhibits internal resonance. We study the fundamental flexural mode (FFM) of a Si microbeam. The FFM is electrically actuated and detected. It is resonantly nonlinearly coupled to another mode, which is not directly accessible and has a frequency nearly three times the FFM frequency. Both the FFM and the passive mode have long lifetimes. We find that the passive mode can be a ``sink'' for fluctuations of the FFM. This explains the recently observed dramatic decrease of these fluctuations at nonlinear resonance. The re-distribution of the vibration amplitudes and the fluctuations is reminiscent of what happens at level anti-crossing in quantum mechanics. However, here it is different because of interplay of the dependence of the vibration frequency of the FFM on its amplitude due to internal nonlinearity and the nonlinear resonance with the passive mode. We study both the response of the system to external resonant driving and also the behavior of the system in the presence of a feedback loop. The experimental and theoretical results are in good agreement.

  6. Damage Assessment in a SiC-fiber reinforced Ceramic Matrix Composite

    Konstantinos G. Dassios

    2013-01-01

    Full Text Available Assessment of the fracture behavior of a SiC-fbre-reinforced barium osumilite (BMAS ceramic matrix composite tested under static and cyclic tension conditions is reported herein. Notched specimens were used in order to limit material damage within a predefined gauge length. Imposition of successive unloading/reloading loops was found to result in an increase by 20% in material strength as compared to pure tension; the observed increase is attributed to energy dissipation from large-scale interfacial debonding phenomena that dominated the post-elastic tensile behaviour of the composite. Cyclic loading also helped establish the axial residual stress state of the fibres in the composite of tensile nature via a well-defined common intersection point of unloading-reloading cycles. A translation vector approach in the stress-strain plane was successful in establishing the residual stress-free properties of the composite and in reconciling the scatter noted in elastic properties of specimens with respect to theoretical expectations.

  7. Optimization of imprintable nanostructured a-Si solar cells: FDTD study.

    Fisker, Christian; Pedersen, Thomas Garm

    2013-03-11

    We present a finite-difference time-domain (FDTD) study of an amorphous silicon (a-Si) thin film solar cell, with nano scale patterns on the substrate surface. The patterns, based on the geometry of anisotropically etched silicon gratings, are optimized with respect to the period and anti-reflection (AR) coating thickness for maximal absorption in the range of the solar spectrum. The structure is shown to increase the cell efficiency by 10.2% compared to a similar flat solar cell with an optimized AR coating thickness. An increased back reflection can be obtained with a 50 nm zinc oxide layer on the back reflector, which gives an additional efficiency increase, leading to a total of 14.9%. In addition, the patterned cells are shown to be up to 3.8% more efficient than an optimized textured reference cell based on the Asahi U-type glass surface. The effects of variations of the optimized solar cell structure due to the manufacturing process are investigated, and shown to be negligible for variations below ±10%.

  8. In situ observation of mechanical damage within a SiC-SiC ceramic matrix composite

    Saucedo-Mora, L. [Institute Eduardo Torroja for Construction Sciences-CSIC, Madrid (Spain); Department of Materials, University of Oxford (United Kingdom); Lowe, T. [Manchester X-ray Imaging Facility, The University of Manchester (United Kingdom); Zhao, S. [Department of Materials, University of Oxford (United Kingdom); Lee, P.D. [Research Complex at Harwell, Rutherford Appleton Laboratory (United Kingdom); Mummery, P.M. [School of Mechanical, Aerospace and Civil Engineering, The University of Manchester (United Kingdom); Marrow, T.J., E-mail: james.marrow@materials.ox.ac.uk [Department of Materials, University of Oxford (United Kingdom)

    2016-12-01

    SiC-SiC ceramic matrix composites are candidate materials for fuel cladding in Generation IV nuclear fission reactors and as accident tolerant fuel clad in current generation plant. Experimental methods are needed that can detect and quantify the development of mechanical damage, to support modelling and qualification tests for these critical components. In situ observations of damage development have been obtained of tensile and C-ring mechanical test specimens of a braided nuclear grade SiC-SiC ceramic composite tube, using a combination of ex situ and in situ computed X-ray tomography observation and digital volume correlation analysis. The gradual development of damage by matrix cracking and also the influence of non-uniform loading are examined. - Highlights: • X-ray tomography with digital volume correlation measures 3D deformation in situ. • Cracking and damage in the microstructure can be detected using the strain field. • Fracture can initiate from the monolithic coating of a SiC-SiC ceramic composite.

  9. Mössbauer spectroscopy study of surfactant sputtering induced Fe silicide formation on a Si surface

    Beckmann, C.; Zhang, K. [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Hofsäss, H., E-mail: hans.hofsaess@phys.uni-goettingen.de [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Brüsewitz, C.; Vetter, U. [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Bharuth-Ram, K. [Physics Department, Durban University of Technology, Durban 4001 (South Africa)

    2015-12-01

    Highlights: • We study the formation of self-organized nanoscale dot and ripple patterns on Si. • Patterns are created by keV noble gas ion irradiation and simultaneous {sup 57}Fe co-deposition. • Ion-induced phase separation and the formation of a-FeSi{sub 2} is identified as relevant process. - Abstract: The formation of Fe silicides in surface ripple patterns, generated by erosion of a Si surface with keV Ar and Xe ions and simultaneous co-deposition of Fe, was investigated with conversion electron Mössbauer spectroscopy, atomic force microscopy and Rutherford backscattering spectrometry. For the dot and ripple patterns studied, we find an average Fe concentration in the irradiated layer between 6 and 25 at.%. The Mössbauer spectra clearly show evidence of the formation of Fe disilicides with Fe content close to 33 at.%, but very little evidence of the formation of metallic Fe particles. The results support the process of ion-induced phase separation toward an amorphous Fe disilicide phase as pattern generation mechanism. The observed amorphous phase is in agreement with thermodynamic calculations of amorphous Fe silicides.

  10. Development of a Si-PM-based high-resolution PET system for small animals

    Yamamoto, Seiichi; Imaizumi, Masao; Watabe, Tadashi; Shimosegawa, Eku; Hatazawa, Jun; Watabe, Hiroshi; Kanai, Yasukazu

    2010-01-01

    A Geiger-mode avalanche photodiode (Si-PM) is a promising photodetector for PET, especially for use in a magnetic resonance imaging (MRI) system, because it has high gain and is less sensitive to a static magnetic field. We developed a Si-PM-based depth-of-interaction (DOI) PET system for small animals. Hamamatsu 4 x 4 Si-PM arrays (S11065-025P) were used for its detector blocks. Two types of LGSO scintillator of 0.75 mol% Ce (decay time: ∼45 ns; 1.1 mm x 1.2 mm x 5 mm) and 0.025 mol% Ce (decay time: ∼31 ns; 1.1 mm x 1.2 mm x 6 mm) were optically coupled in the DOI direction to form a DOI detector, arranged in a 11 x 9 matrix, and optically coupled to the Si-PM array. Pulse shape analysis was used for the DOI detection of these two types of LGSOs. Sixteen detector blocks were arranged in a 68 mm diameter ring to form the PET system. Spatial resolution was 1.6 mm FWHM and sensitivity was 0.6% at the center of the field of view. High-resolution mouse and rat images were successfully obtained using the PET system. We confirmed that the developed Si-PM-based PET system is promising for molecular imaging research.

  11. Long-term aircrew exposure monitoring by means of a Si-diode spectrometer

    Spurny, F.; Dacev, C.

    2003-01-01

    In this contribution we present the results of onboard measurement by means of a Si-diode energy deposition spectrometer, Md-Liulin]. They were accumulated during 2001-2003 years onboard of an A310-300 aircraft of Czech Air lines, during 6 long-term monitoring and about 30 return single flights. Some of results obtained are presented, discussed and analyzed. The semiconductor spectrometer proved the possibility to monitor dosimetric characteristics of radiation fields on aircraft board during about 2 months. It permitted to register onboard a ground level solar event. The results obtained can significantly help to estimate the contribution of solar eruptions to aircrew exposure. Spectrometric properties of it permit to enlarge the interpretation of directly registered data. An additional effort is needed to improve this performance. Further calibration in the CERF fields is needed, important would be to acquire further onboard data in cases when the contribution of the ionizing/neutron part of the field changes. (authors)

  12. Atomic force microscopy measurements of topography and friction on dotriacontane films adsorbed on a SiO2 surface

    Trogisch, S.; Simpson, M.J.; Taub, H.

    2005-01-01

    We report comprehensive atomic force microscopy (AFM) measurements at room temperature of the nanoscale topography and lateral friction on the surface of thin solid films of an intermediate-length normal alkane, dotriacontane (n-C32H66), adsorbed onto a SiO2 surface. Our topographic and frictional...

  13. Microstructural and optical properties of A-Si: H deposited by DC plasma glow discharge of electrode polarity

    Salam, R.; Danker, A.R.

    1993-01-01

    A method for deducing the density of valence electrons and the average atomic separation of Si atoms in a-Si:H are presented. Refractive index and optical absorption experimental data on a variety of dc glow discharge deposited a-Si:H samples are utilized to deduce the two parameters. The density of valence electrons depict values in the range (1.47-6.15)x10 22 cm -3 while the average atomic spacing varies within 3.13-4.61 A. The existence of microvoids and regions of rich silicon-hydride phase are proposed to account for this. Comparisons of the electrical conductivity, optical parameters and vibrational modes are done for cathode and anode deposited a-Si:H samples. Conductivity for both types of samples are the same at around 1.3x10 -9 (Ωcm) -1 , but significant differences are observed in the values of the refractive index n and the optical gap Eg of the cathode (4.06, 1.95 eV) and anode (3.13, 2.34 eV) samples. Observations on the infrared spectrum of the two a-Si:H samples suggests that the anode sample contain appreciable amount and a higher proportion of oxygen, as identified by the 2080cm -1 shift of the Si-H stretching mode, while a strong Si-H 3 symmetric deformation mode is proposed to occur in the cathode sample

  14. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

    Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

    2003-01-01

    Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

  15. Photolithographic Pattern Transformation by Backside Exposure in a-Si:H Thin-Film Transistor Liquid Crystal Displays

    Uchikoga, Shuichi; Hiromasu, Yasunobu; Onozuka, Yutaka; Koizumi, Takashi; Akiyama, Masahiko; Ikeda, Mitsushi; Suzuki, Kouji

    1995-02-01

    Resist pattern transformation by backside exposure, which is a key process for a self-alignment technique is investigated. The light intensity and a-Si:H thickness markedly affect the pattern transformation, while the effect of gate insulator thickness is small. Numerical simulations based on Fresnel diffraction showed fairly good agreement with the experimental results.

  16. Integrated mechano-optical hydrogen gas sensor using cantilever bending readout with a Si3N4 grated waveguide.

    Pham Van So, P.V.S.; Dijkstra, Mindert; van Wolferen, Hendricus A.G.M.; Pollnau, Markus; Krijnen, Gijsbertus J.M.; Hoekstra, Hugo

    We demonstrate a proof of concept of a novel and compact integrated mechano-optical sensor for H2 detection based on a microcantilever suspended above a Si3N4 grated waveguide. The fabricated devices are mechanically and optically modeled and characterized. Sensing operation of the sensor is

  17. Characterization of μc-Si:H/a-Si:H tandem solar cell structures by spectroscopic ellipsometry

    Murata, Daisuke; Yuguchi, Tetsuya; Fujiwara, Hiroyuki

    2014-01-01

    In order to perform the structural characterization of Si thin-film solar cells having submicron-size rough textured surfaces, we have developed an optical model that can be utilized for the spectroscopic ellipsometry (SE) analysis of a multilayer solar cell structure consisting of hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) layers fabricated on textured SnO 2 :F substrates. To represent the structural non-uniformity in the textured structure, the optical response has been calculated from two regions with different thicknesses of the Si layers. Moreover, in the optical model, the interface layers are modeled by multilayer structures assuming two-phase composites and the volume fractions of the phases in the layers are controlled by the structural curvature factor. The polarized reflection from the μc-Si:H layer that shows extensive surface roughening during the growth has also been modeled. In this study, a state-of-the-art solar cell structure with the textured μc-Si:H (2000 nm)/ZnO (100 nm)/a-Si:H (200 nm)/SnO 2 :F/glass substrate structure has been characterized. The μc-Si:H/a-Si:H textured structure deduced from our SE analysis shows remarkable agreement with that observed by transmission electron microscopy. From the above results, we have demonstrated the high-precision characterization of highly-textured μc-Si:H/a-Si:H solar cell structures. - Highlights: • Characterization of textured μc-Si:H/a-Si:H solar cell structures by ellipsometry • A new optical model using surface area and multilayer models • High precision characterization of submicron-range rough interface structures

  18. Assessment of dosimetrical performance in 11 Varian a-Si500 electronic portal imaging devices

    Kavuma, Awusi; Glegg, Martin; Currie, Garry; Elliott, Alex

    2008-01-01

    Dosimetrical characteristics of 11 Varian a-Si-500 electronic portal imaging devices (EPIDs) in clinical use for periods ranging between 10 and 86 months were investigated for consistency of performance and portal dosimetry implications. Properties studied include short-term reproducibility, signal linearity with monitor units, response to reference beam, signal uniformity across the detector panel, signal dependence on field size, dose-rate influence, memory effects and image profiles as a function of monitor units. The EPID measurements were also compared with those of the ionization chambers' to ensure stability of the linear accelerators. Depending on their clinical installation date, the EPIDs were interfaced with one of the two different acquisition control software packages, IAS2/IDU-II or IAS3/IDU-20. Both the EPID age and image acquisition system influenced the dosimetric characteristics with the newer version (IAS3 with IDU-20) giving better data reproducibility and linearity fit than the older version (IAS2 with IDU-II). The relative signal response (uniformity) after 50 MU was better than 95% of the central value and independent of detector. Sensitivity for all EPIDs reduced continuously with increasing dose rates for the newer image acquisition software. In the dose-rate range 100-600 MU min -1 , the maximum variation in sensitivity ranged between 1 and 1.8% for different EPIDs. For memory effects, the increase in the measured signal at the centre of the irradiated field for successive images was within 1.8% and 1.0% for the older and newer acquisition systems, respectively. Image profiles acquired at a lower MU in the radial plane (gun-target) had gradients in measured pixel values of up to 25% for the older system. Detectors with software/hardware versions IAS3/IDU-20 have a high degree of accuracy and are more suitable for routine quantitative IMRT dosimetrical verification.

  19. A (Si VI) (1.92 micrometer) coronal line survey of galactic nuclei

    Marconi, A.; Moorwood, A. F. M.; Salvati, M.; Oliva, E.

    1994-11-01

    We present the results of a (Si VI) lambda 1.962 emission line survey of active, starburst and IRAS luminous galaxies. The line was only detected in known Seyfert type 1 and 2 nuclei confirming previous suggestions that (Si VI) is related to Seyfert activity. By modeling the formation of (Si VI) and (Fe VIII) lambda 6087 we find further strong evidence that these lines arise in gas photoionized by the active nucleus although collisional ionization e.g. by shock fronts may be important in some galaxies exhibiting (Fe VII) much greater than (Si VI). Our failure to detect (Si VI) in the IRAS ultraluminous galaxies does not exclude the possible presence of obscured Active Galactic Nuclei (AGNs), particularly as some of the known Seyferts were also not detected. Molecular hydrogen lines (a by-product of our spectra) are common in all galaxy types including several IRAS ultraluminous galaxies whose H2 equivalent widths (Wlambda less that 20 A) are 'normal'and much lower than the extreme value (Wlambda approximately = 70 A) found in NGC 6240 and NGC 1275. 'Bare' Seyferts have Wlambda(H2) less than 1 A and a factor greater than or approximately 10 lower than starbursts, and we do not confirm previous claims of H2 line emission in the quasar 3C273. Although the ratio of H2 to (Si VI) emission varies over a wide range it does not appear to provide a useful indicator of activity type or to impose constraints on the He excitation mechanism.

  20. Proposal of a SiC disposal canister for very deep borehole disposal

    Choi, Heui-Joo; Lee, Minsoo; Lee, Jong-Youl; Kim, Kyungsu [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-10-15

    In this paper authors proposed a silicon carbide, SiC, disposal canister for the DBD concept in Korea. A. Kerber et al. first proposed the SiC canister for a geological disposal of HLW, CANDU or HTR spent nuclear fuels. SiC has some drawbacks in welding or manufacturing a large canister. Thus, we designed a double layered disposal canister consisting of a stainless steel outer layer and a SiC inner layer. KAERI has been interested in developing a very deep borehole disposal (DBD) of HLW generated from pyroprocessing of PWR spent nuclear fuel and supported the relevant R and D with very limited its own budget. KAERI team reviewed the DBD concept proposed by Sandia National Laboratories (SNL) and developed its own concept. The SNL concept was based on the steel disposal canister. The authors developed a new technology called cold spray coating method to manufacture a copper-cast iron disposal canister for a geological disposal of high level waste in Korea. With this method, 8 mm thin copper canister with 400 mm in diameter and 1200 mm in height was made. In general, they do not give any credit on the lifetime of a disposal canister in DBD concept unlike the geological disposal. In such case, the expensive copper canister should be replaced with another one. We designed a disposal canister using SiC for DBD. According to an experience in manufacturing a small size canister, the fabrication of a large-size one is a challenge. Also, welding of SiC canister is not easy. Several pathways are being paved to overcome it.

  1. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    Lim, Namsoo

    2018-02-28

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

  2. Managing the backscatter component from the robotic arm of an a-Si EPID

    Lee, C.G.; Menk, F.; Greer, P.B.

    2010-01-01

    Full text: Backscatter from the robotic arm mechanism of an a-Si EPID in IMRT images was examined. Images corrected with a conventional flood field (FF) containing a backscatter component (BSC) from the robotic ann were compared with a BSC-free FF. A Yarian 21 EX linac (6 MV, 18 MV) was used. All images were acquired with two aS500 EPIDs, one R-arm and one E-arm. The BSC of an EPID image is the ratio of an image acquired with the EPID attached to the arm then detaching the arm from the EPID and acquiring the same image. A range of square field sizes from 2.5 x 2.5 cm to 27.5 x 27.5 cm were acquired and the BSC analyzed. The BSC of the FFs were also measured. A series of IMRT fields were acquired. Each field was corrected with a conventional FF and compared with a BSC-free FF. Figure I shows the magnitude of the BSC from each arm in the inplane for a 6 x beam. Square fields above 16 x l6 cm (R-arm) and lO x 10 cm (E-arm) benefited from a conventional FF as it tended to cancel out the BSC in the acquired square field. The opposite was observed for smaller field sizes. A gamma analysis of the IMRT fields showed a FF correction containing a BSC reduces the effect of the arm in the final image. IMRT EPID images using conventional FFs have been shown to be less affected by backscatter from the robotic arm compared to BSC-free flood fields. (author)

  3. Asymmetry of characteristic X-ray peaks obtained by a Si(Li) detector

    Visnovezky, Claudia [Facultad de Matematica, Astronomia y Fisica, Universidad Nacional de Cordoba, Ciudad Universitaria, 5000, Cordoba (Argentina)], E-mail: cavy3@hotmail.com; Limandri, Silvina [Facultad de Matematica, Astronomia y Fisica, Universidad Nacional de Cordoba, Ciudad Universitaria, 5000, Cordoba (Argentina)], E-mail: silvilimandri@hotmail.com; Canafoglia, Maria Elena [Centro de Investigacion y Desarrollo en Ciencias Aplicadas Dr. Jorge Ronco, Calle 47 No 257, 1900 La Plata, Argentina, Facultad de Ciencias Exactas y Facultad de Ingenieria de la UNLP, La Plata (Argentina); Bonetto, Rita [Centro de Investigacion y Desarrollo en Ciencias Aplicadas Dr. Jorge Ronco, Calle 47 No 257, 1900 La Plata, Argentina, Facultad de Ciencias Exactas y Facultad de Ingenieria de la UNLP, La Plata (Argentina); Consejo Nacional de Investigaciones Cientificas y Tecnicas de la Republica Argentina (Argentina)], E-mail: bonetto@quimica.unlp.edu.ar; Trincavelli, Jorge [Facultad de Matematica, Astronomia y Fisica, Universidad Nacional de Cordoba, Ciudad Universitaria, 5000, Cordoba (Argentina); Consejo Nacional de Investigaciones Cientificas y Tecnicas de la Republica Argentina (Argentina)], E-mail: jorge@quechua.fis.uncor.edu

    2007-05-15

    The asymmetry of the characteristic X-ray peaks obtained using a Si(Li) detector is mainly due to incomplete charge collection. Impurities and defects in the crystalline structure of Si can act as 'traps' for holes and electrons in their trip toward the detector electrodes. Therefore, the collected charge, and consequently the detected energy, is smaller than the expected one. The global effect is that peaks may present a 'tail' toward the low energy side. This phenomenon is more important for low energies (lower than 2.3 keV, in the case of the detector characterized). In this work, the parameters related to peak asymmetry were studied, allowing a better understanding of the trapping process mentioned above. For this purpose, spectra from mono- and multi-element samples were collected for elements with atomic number between 7 and 20. In order to describe the shape of the characteristic K peaks as a function of its energy, an asymmetric correction to a Gaussian function was proposed. Spectra were obtained by electron probe microanalysis for incidence energies between 5 and 25 keV using an energy dispersive spectrometer equipped with an ultra-thin window Si(Li) detector. It was observed that the area corresponding to the asymmetric correction exhibits an energy dependence similar to that of the mass absorption coefficient of the detector material. In addition, other two spectrometers were used to investigate the dependence of tailing on the detection system. When two spectrometers with the same kind of detector and different pulse processors were compared, peaks were more asymmetric for lower peaking time values. When two different detectors were used, differences were even more important.

  4. Effects of germane flow rate in electrical properties of a-SiGe:H films for ambipolar thin-film transistors

    Dominguez, Miguel, E-mail: madominguezj@gmail.com [Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla 72570 (Mexico); Rosales, Pedro, E-mail: prosales@inaoep.mx [National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla 72840 (Mexico); Torres, Alfonso [National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla 72840 (Mexico); Flores, Francisco [Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla 72570 (Mexico); Molina, Joel; Moreno, Mario [National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla 72840 (Mexico); Luna, Jose [Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla 72570 (Mexico); Orduña, Abdu [Centro de Investigación en Biotecnología Aplicada (CIBA), IPN, Tlaxcala, Tlaxcala 72197 (Mexico)

    2014-07-01

    In this work, the study of germane flow rate in electrical properties of a-SiGe:H films is presented. The a-SiGe:H films deposited by low frequency plasma-enhanced chemical vapor deposition at 300 °C were characterized by Fourier transform infrared spectroscopy, measurements of temperature dependence of conductivity and UV–visible spectroscopic ellipsometry. After finding the optimum germane flow rate conditions, a-SiGe:H films were deposited at 200 °C and analyzed. The use of a-SiGe:H films at 200 °C as active layer of low-temperature ambipolar thin-film transistors (TFTs) was demonstrated. The inverted staggered a-SiGe:H TFTs with Spin-On Glass as gate insulator were fabricated. These results suggest that there is an optimal Ge content in the a-SiGe:H films that improves its electrical properties. - Highlights: • As the GeH{sub 4} flow rate increases the content of oxygen decreases. • Ge-H bonds show the highest value in a-SiGe:H films with GeH{sub 4} flow of 105 sccm. • Films with GeH{sub 4} flow of 105 sccm show the highest activation energy. • An optimum incorporation of germanium is obtained with GeH{sub 4} flow rate of 105 sccm. • At 200 °C the optimum condition of the a-SiGe:H films remain with no changes.

  5. Electrical instability of a-Si:H/SiN thin film transistors : a study at room temperature and low voltage stress

    Merticaru, A.R.

    2004-01-01

    The thesis shows the results of four years of research into the electrical stability of a-Si:H/SiN TFTs. Various methods of investigation of a-Si:H/SiN TFTs have been carried out in this thesis towards understanding the causes of degradation that shortens the transistor lifetime and narrows the

  6. Characterization of SiC in DLC/a-Si films prepared by pulsed filtered cathodic arc using Raman spectroscopy and XPS

    Srisang, C.; Asanithi, P.; Siangchaew, K.; Pokaipisit, A.; Limsuwan, P.

    2012-01-01

    DLC/a-Si films were deposited on germanium substrates. a-Si film was initially deposited as a seed layer on the substrate using DC magnetron sputtering. DLC film was then deposited on the a-Si layer via a pulsed filtered cathodic arc (PFCA) system. In situ ellipsometry was used to monitor the thicknesses of the growth films, allowing a precise control over the a-Si and DLC thicknesses of 6 and 9 nm, respectively. It was found that carbon atoms implanting on a-Si layer act not only as a carbon source for DLC formation, but also as a source for SiC formation. The Raman peak positions at 796 cm -1 and 972 cm -1 corresponded to the LO and TO phonon modes of SiC, respectively, were observed. The results were also confirmed using TEM, XPS binding energy and XPS depth profile analysis.

  7. Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures

    Šály, V; Pern, M; Janíček, F; Mikolášek, M; Packa, J; Huran, J

    2017-01-01

    Progressive smart photovoltaic technologies including heterostructures a-SiC/c-Si with ITO antireflection film are one of the prospective replacements of conventional photovoltaic silicon technology. Our paper is focused on the investigation of heterostructures a-SiC/c-Si provided with a layer of ITO (indium oxide/tin oxide 90/10 wt.%) which acts as a passivating and antireflection coating. Prepared photovoltaic cell structure was investigated at various temperatures and the influence of temperature on its operation was searched. The investigation of the dynamic properties of heterojunction PV cells was carried out using impedance spectroscopy. The equivalent AC circuit which approximates the measured impedance data was proposed. Assessment of the influence of the temperature on the operation of prepared heterostructure was carried out by analysis of the temperature dependence of AC equivalent circuit elements. (paper)

  8. Impedance spectroscopy of heterojunction solar cell a-SiC/c-Si with ITO antireflection film investigated at different temperatures

    Šály, V.; Perný, M.; Janíček, F.; Huran, J.; Mikolášek, M.; Packa, J.

    2017-04-01

    Progressive smart photovoltaic technologies including heterostructures a-SiC/c-Si with ITO antireflection film are one of the prospective replacements of conventional photovoltaic silicon technology. Our paper is focused on the investigation of heterostructures a-SiC/c-Si provided with a layer of ITO (indium oxide/tin oxide 90/10 wt.%) which acts as a passivating and antireflection coating. Prepared photovoltaic cell structure was investigated at various temperatures and the influence of temperature on its operation was searched. The investigation of the dynamic properties of heterojunction PV cells was carried out using impedance spectroscopy. The equivalent AC circuit which approximates the measured impedance data was proposed. Assessment of the influence of the temperature on the operation of prepared heterostructure was carried out by analysis of the temperature dependence of AC equivalent circuit elements.

  9. Flash-lamp-crystallized polycrystalline silicon films with high hydrogen concentration formed from Cat-CVD a-Si films

    Ohdaira, Keisuke; Tomura, Naohito; Ishii, Shohei; Matsumura, Hideki

    2011-01-01

    We investigate residual forms of hydrogen (H) atoms such as bonding configuration in poly-crystalline silicon (poly-Si) films formed by the flash-lamp-induced crystallization of catalytic chemical vapor deposited (Cat-CVD) a-Si films. Raman spectroscopy reveals that at least part of H atoms in flash-lamp-crystallized (FLC) poly-Si films form Si-H 2 bonds as well as Si-H bonds with Si atoms even using Si-H-rich Cat-CVD a-Si films, which indicates the rearrangement of H atoms during crystallization. The peak desorption temperature during thermal desorption spectroscopy (TDS) is as high as 900 o C, similar to the reported value for bulk poly-Si.

  10. FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios

    Orduna-Diaz, A., E-mail: abdu@susu.inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Trevino-Palacios, C.G. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Rojas-Lopez, M.; Delgado-Macuil, R.; Gayou, V.L. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Torres-Jacome, A. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico)

    2010-10-25

    Hydrogenated amorphous silicon (a-Si:H) has found applications in flat panel displays, photovoltaic solar cell and recently has been employed in boron doped microbolometer array. We have performed electrical and structural characterizations of a-Si:H layers prepared by plasma enhanced chemical vapor deposition (PECVD) method at 540 K on glass substrates at different diborane (B{sub 2}H{sub 6}) flow ratios (500, 250, 150 and 50 sccm). Fourier transform infrared spectroscopy (FTIR) measurements obtained by specular reflectance sampling mode, show Si-Si, B-O, Si-H, and Si-O vibrational modes (611, 1300, 2100 and 1100 cm{sup -1} respectively) with different strengths which are associated to hydrogen and boron content. The current-voltage curves show that at 250 sccm flow of boron the material shows the lowest resistivity, but for the 150 sccm boron flow it is obtained the highest temperature coefficient of resistance (TCR).

  11. Measurements of 1/f noise in A-Si:H pin diodes and thin-film-transistors

    Cho, Gyuseong; Drewery, J.S.; Fujieda, I.; Jing, T.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Wildermuth, D.; Street, R.A.

    1990-05-01

    We measured the equivalent noise charge of a-Si:H pin diodes (5 ∼ 45μm i-layer) with a pulse shaping time of 2.5 μsec under reverse biases up to 30 V/μm and analyzed it as a four component noise source. The frequency spectra of 1/f noise on the soft-breakdown region and of the Nyquist noise from contact resistance of diodes were measured. Using the conversion equations for a CR-RC shaper, we identified the contact resistance noise and the 1/f noise as the main noise sources in the low bias and high bias regions respectively. The 1/f noise of a-Si:H TFTs with channel length of 15 μm was measured to be the dominant component up to ∼100kHz for both saturation and linear regions. 15 refs., 7 figs

  12. Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H

    Poliani, E.; Somaschini, C.; Sanguinetti, S.; Grilli, E.; Guzzi, M.; Le Donne, A.; Binetti, S.; Pizzini, S.; Chrastina, D.; Isella, G.

    2009-01-01

    We report the effect of laser annealing on the structural and electronic properties of nc-Si/a-Si:H samples grown close to the amorphous to nanocrystalline transition. The nc-Si/a-Si:H thin films were produced by low-energy plasma-enhanced chemical vapor deposition through a gas discharge containing SiH 4 . The samples were subjected to different laser fluencies and were characterized for changes in their structural and electronic properties via Raman spectroscopy and photoluminescence measurements. The laser annealing effects are twofold: i) the nanocrystalline phase grows, during the laser treatment, respect to the amorphous phase; ii) the photoluminescence spectra show the suppression, after laser annealing, of the frequencies above the crystalline Si band-gap.

  13. High-Pressure Water-Vapor Annealing for Enhancement of a-Si:H Film Passivation of Silicon Surface

    Guo Chun-Lin; Wang Lei; Zhang Yan-Rong; Zhou Hai-Feng; Liang Feng; Yang Zhen-Hui; Yang De-Ren

    2014-01-01

    We investigate the effect of amorphous hydrogenated silicon (a-Si:H) films passivated on silicon surfaces based on high-pressure water-vapor annealing (HWA). The effective carrier lifetime of samples reaches the maximum value after 210°C, 90min HWA. Capacitance-voltage measurement reveals that the HWA not only greatly reduces the density of interface states (D it ), but also decreases the fixed charges (Q fixed ) mainly caused by bulk defects. The change of hydrogen and oxygen in the film is measured by a spectroscopic ellipsometer and a Fourier-transform infrared (FTIR) spectrometer. All these results show that HWA is a useful method to improve the passivation effect of a-Si:H films deposited on silicon surfaces

  14. Phase and thickness dependence of thermal diffusivity in a-SiCxNy and a-BCxNy

    Chattopadhyay, S.; Chen, L.C.; Chien, S.C.; Lin, S.T.; Wu, C.T.; Chen, K.H.

    2002-01-01

    Thermal diffusivity (α) and bonding configuration of amorphous silicon carbon nitride (a-SiC x N y ) and boron carbon nitride (a-BC x N y ) films on silicon substrates were studied. Measurement of α by the traveling wave technique and bonding characterisation through X-ray photoelectron spectroscopy in a-SiC x N y and a-BC x N y films having different carbon concentrations revealed that lower coordinated bonds were detrimental to the thermal diffusivity of these films. Furthermore, α was found to depend on the thickness of these films deposited on silicon. This was attributed to the interface thermal resistance between two thermally different materials, the film and the substrate, although other factors such as film microstructure could also play a role. An empirical relation for the variation of thermal diffusivity with thickness is proposed

  15. GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating.

    Shindo, Takahiko; Okumura, Tadashi; Ito, Hitomi; Koguchi, Takayuki; Takahashi, Daisuke; Atsumi, Yuki; Kang, Joonhyun; Osabe, Ryo; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

    2011-01-31

    We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.

  16. Dual Band a-Si:H Solar-Slot Antenna for 2.4/5.2GHz WLAN Applications

    S. V. Shynu

    2009-12-01

    Full Text Available A simple and compact design of solar-slot antenna for dual band 2.4/5.2GHz wireless local area networks (WLAN applications is proposed. The design employs amorphous silicon (a-Si:H solar cells in polyimide substrate with an embedded twin strip slot structure to generate dual resonant frequencies. A T-shaped microstripline feed is used to excite the twin slot in the a-Si:H solar cell. The measured impedance bandwidths for the proposed solar antenna are 25.9% (642 MHz centered at 2.482 GHz and 8.2% (420 MHz centered at 5.098 GHz. The measured gain at 2.4 and 5.2 GHz are 3.1 dBi and 2.1 dBi respectively.

  17. A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors

    Qiang Lei; Yao Ruo-He

    2012-01-01

    Based on the differential Ohm's law and Poisson's equation, an analytical model of the drain current for a-Si:H thin-film transistors is developed. This model is proposed to elaborate the temperature effect on the drain current, which indicates that the drain current is linear with temperature in the range of 290-360 K, and the results fit well with the experimental data

  18. Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

    Someya, T.; Ishida, Y.; Yoshida, R.; Iimori, T.; Yukawa, R.; Akikubo, K.; Yamamoto, Sh.; Yamamoto, S.; Kanai, T.; Itatani, J.; Komori, F.; Shin, S.; Matsuda, I.; Fukidome, H.; Funakubo, K.; Suemitsu, M.; Yamamoto, T.

    2014-01-01

    Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi–Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron–electron scattering, and the observed electronic temperature indicates cascade carrier multiplication

  19. Neutron polarizing Fe-Al supermirror on a Si crystal substrate and its applications for thermal and cold neutrons

    Syromyatnikov, V.G.; Shchebetov, A.F.; Soroko, Z.N.

    1994-01-01

    Experimental data are presented for an Fe-Al neutron polarizing supermirror on a Si crystal substrate with an antireflecting Cd layer. The polarizing efficiency of this supermirror is P≥qslant0.8 for the range of glancing angles θ/λ=0.25-1.7 /nm and P≥qslant0.95 for θ/λ=0.34-1.7 /nm. Some applications of this supermirror for thermal and cold neutrons are considered. ((orig.))

  20. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells.

    Hengst, Claudia; Menzel, Siegfried B; Rane, Gayatri K; Smirnov, Vladimir; Wilken, Karen; Leszczynska, Barbara; Fischer, Dustin; Prager, Nicole

    2017-03-01

    The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young's modulus, and crack onset strain (COS) were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET) substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO) conductive coatings were prepared. Whereas a characteristic grain-subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells) during fabrication in a roll-to-roll process or under service.

  1. Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

    Dhungana, Kamal B; Jaishi, Meghnath; Pati, Ranjit

    2016-07-13

    The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.

  2. Modelling on c-Si/a-Si:H wire solar cells: some key parameters to optimize the photovoltaic performance

    Alvarez J.

    2012-07-01

    Full Text Available Solar cells based on silicon nano- or micro-wires have attracted much attention as a promising path for low cost photovoltaic technology. The key point of this structure is the decoupling of the light absorption from the carriers collection. In order to predict and optimize the performance potential of p- (or n- doped c-Si/ n-(or p- doped a-Si:H nanowire-based solar cells, we have used the Silvaco-Atlas software to model a single-wire device. In particular, we have noticed a drastic decrease of the open-circuit voltage (Voc when increasing the doping density of the silicon core beyond an optimum value. We present here a detailed study of the parameters that can alter the Voc of c-Si(p/a-Si:H (n wires according to the doping density in c-Si. A comparison with simulation results obtained on planar c-Si/a-Si:H heterojunctions shows that the drop in Voc, linked to an increase of the dark current in both structures, is more pronounced for radial junctions due to geometric criteria. These numerical modelling results have lead to a better understanding of transport phenomena within the wire.

  3. Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells

    Claudia Hengst

    2017-03-01

    Full Text Available The behavior of bi- and trilayer coating systems for flexible a-Si:H based solar cells consisting of a barrier, an electrode, and an absorption layer is studied under mechanical load. First, the film morphology, stress, Young’s modulus, and crack onset strain (COS were analyzed for single film coatings of various thickness on polyethylene terephthalate (PET substrates. In order to demonstrate the role of the microstructure of a single film on the mechanical behavior of the whole multilayer coating, two sets of InSnOx (indium tin oxide, ITO conductive coatings were prepared. Whereas a characteristic grain–subgrain structure was observed in ITO-1 films, grain growth was suppressed in ITO-2 films. ITO-1 bilayer coatings showed two-step failure under tensile load with cracks propagating along the ITO-1/a-Si:H-interface, whereas channeling cracks in comparable bi- and trilayers based on amorphous ITO-2 run through all constituent layers. A two-step failure is preferable from an application point of view, as it may lead to only a degradation of the performance instead of the ultimate failure of the device. Hence, the results demonstrate the importance of a fine-tuning of film microstructure not only for excellent electrical properties, but also for a high mechanical performance of flexible devices (e.g., a-Si:H based solar cells during fabrication in a roll-to-roll process or under service.

  4. Dosimetry in radiotherapy using a-Si EPIDs: Systems, methods, and applications focusing on 3D patient dose estimation

    McCurdy, B. M. C.

    2013-06-01

    An overview is provided of the use of amorphous silicon electronic portal imaging devices (EPIDs) for dosimetric purposes in radiation therapy, focusing on 3D patient dose estimation. EPIDs were originally developed to provide on-treatment radiological imaging to assist with patient setup, but there has also been a natural interest in using them as dosimeters since they use the megavoltage therapy beam to form images. The current generation of clinically available EPID technology, amorphous-silicon (a-Si) flat panel imagers, possess many characteristics that make them much better suited to dosimetric applications than earlier EPID technologies. Features such as linearity with dose/dose rate, high spatial resolution, realtime capability, minimal optical glare, and digital operation combine with the convenience of a compact, retractable detector system directly mounted on the linear accelerator to provide a system that is well-suited to dosimetric applications. This review will discuss clinically available a-Si EPID systems, highlighting dosimetric characteristics and remaining limitations. Methods for using EPIDs in dosimetry applications will be discussed. Dosimetric applications using a-Si EPIDs to estimate three-dimensional dose in the patient during treatment will be overviewed. Clinics throughout the world are implementing increasingly complex treatments such as dynamic intensity modulated radiation therapy and volumetric modulated arc therapy, as well as specialized treatment techniques using large doses per fraction and short treatment courses (ie. hypofractionation and stereotactic radiosurgery). These factors drive the continued strong interest in using EPIDs as dosimeters for patient treatment verification.

  5. Optical gradients in a-Si:H thin films detected using real-time spectroscopic ellipsometry with virtual interface analysis

    Junda, Maxwell M.; Karki Gautam, Laxmi; Collins, Robert W.; Podraza, Nikolas J.

    2018-04-01

    Virtual interface analysis (VIA) is applied to real time spectroscopic ellipsometry measurements taken during the growth of hydrogenated amorphous silicon (a-Si:H) thin films using various hydrogen dilutions of precursor gases and on different substrates during plasma enhanced chemical vapor deposition. A procedure is developed for optimizing VIA model configurations by adjusting sampling depth into the film and the analyzed spectral range such that model fits with the lowest possible error function are achieved. The optimal VIA configurations are found to be different depending on hydrogen dilution, substrate composition, and instantaneous film thickness. A depth profile in the optical properties of the films is then extracted that results from a variation in an optical absorption broadening parameter in a parametric a-Si:H model as a function of film thickness during deposition. Previously identified relationships are used linking this broadening parameter to the overall shape of the optical properties. This parameter is observed to converge after about 2000-3000 Å of accumulated thickness in all layers, implying that similar order in the a-Si:H network can be reached after sufficient thicknesses. In the early stages of growth, however, significant variations in broadening resulting from substrate- and processing-induced order are detected and tracked as a function of bulk layer thickness yielding an optical property depth profile in the final film. The best results are achieved with the simplest film-on-substrate structures while limitations are identified in cases where films have been deposited on more complex substrate structures.

  6. a-Si:H/c-Si heterojunction front- and back contacts for silicon solar cells with p-type base

    Rostan, Philipp Johannes

    2010-07-01

    This thesis reports on low temperature amorphous silicon back and front contacts for high-efficiency crystalline silicon solar cells with a p-type base. The back contact uses a sequence of intrinsic amorphous (i-a-Si:H) and boron doped microcrystalline (p-{mu}c-Si:H) silicon layers fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) and a magnetron sputtered ZnO:Al layer. The back contact is finished by evaporating Al onto the ZnO:Al and altogether prepared at a maximum temperature of 220 C. Analysis of the electronic transport of mobile charge carriers at the back contact shows that the two high-efficiency requirements low back contact series resistance and high quality c-Si surface passivation are in strong contradiction to each other, thus difficult to achieve at the same time. The preparation of resistance- and effective lifetime samples allows one to investigate both requirements independently. Analysis of the majority charge carrier transport on complete Al/ZnO:Al/a-Si:H/c-Si back contact structures derives the resistive properties. Measurements of the effective minority carrier lifetime on a-Si:H coated wafers determines the back contact surface passivation quality. Both high-efficiency solar cell requirements together are analyzed in complete photovoltaic devices where the back contact series resistance mainly affects the fill factor and the back contact passivation quality mainly affects the open circuit voltage. The best cell equipped with a diffused emitter with random texture and a full-area a-Si:H/c-Si back contact has an independently confirmed efficiency {eta} = 21.0 % with an open circuit voltage V{sub oc} = 681 mV and a fill factor FF = 78.7 % on an area of 1 cm{sup 2}. An alternative concept that uses a simplified a-Si:H layer sequence combined with Al-point contacts yields a confirmed efficiency {eta} = 19.3 % with an open circuit voltage V{sub oc} = 655 mV and a fill factor FF = 79.5 % on an area of 2 cm{sup 2}. Analysis of the

  7. Enhanced absorption in Au nanoparticles/a-Si:H/c-Si heterojunction solar cells exploiting Au surface plasmon resonance

    Losurdo, Maria; Giangregorio, Maria M.; Bianco, Giuseppe V.; Sacchetti, Alberto; Capezzuto, Pio; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy)

    2009-10-15

    Au nanoparticles (NPs)/(n-type)a-Si:H/(p-type)c-Si heterojunctions have been deposited combining plasma-enhanced chemical-vapour deposition (PECVD) with Au sputtering. We demonstrate that a density of {proportional_to}1.3 x 10{sup 11} cm{sup -2} of Au nanoparticles with an approximately 20 nm diameter deposited onto (n-type)a-Si:H/(p-type)c-Si heterojunctions enhance performance exploiting the improved absorption of light by the surface plasmon resonance of Au NPs. In particular, Au NPs/(n-type)a-Si:H/(p-type)c-Si show an enhancement of 20% in the short-circuit current, J{sub SC}, 25% in the power output, P{sub max} and 3% in the fill factor, FF, compared to heterojunctions without Au NPs. Structures have been characterized by spectroscopic ellipsometry, atomic force microscopy and current-voltage (I-V) measurements to correlate the plasmon resonance-induced enhanced absorption of light with photovoltaic performance. (author)

  8. Using high haze (> 90%) light-trapping film to enhance the efficiency of a-Si:H solar cells

    Chu, Wei-Ping; Lin, Jian-Shian; Lin, Tien-Chai; Tsai, Yu-Sheng; Kuo, Chen-Wei; Chung, Ming-Hua; Hsieh, Tsung-Eong; Liu, Lung-Chang; Juang, Fuh-Shyang; Chen, Nien-Po

    2012-07-01

    The high haze light-trapping (LT) film offers enhanced scattering of light and is applied to a-Si:H solar cells. UV glue was spin coated on glass, and then the LT pattern was imprinted. Finally, a UV lamp was used to cure the UV glue on the glass. The LT film effectively increased the Haze ratio of glass and decreased the reflectance of a-Si:H solar cells. Therefore, the photon path length was increased to obtain maximum absorption by the absorber layer. High Haze LT film is able to enhance short circuit current density and efficiency of the device, as partial composite film generates broader scattering light, thereby causing shorter wave length light to be absorbed by the P layer so that the short circuit current density decreases. In case of lab-made a-Si:H thin film solar cells with v-shaped LT films, superior optoelectronic performances have been found (Voc = 0.74 V, Jsc = 15.62 mA/cm2, F.F. = 70%, and η = 8.09%). We observed ~ 35% enhancement of the short-circuit current density and ~ 31% enhancement of the conversion efficiency.

  9. Analytical solution for haze values of aluminium-induced texture (AIT) glass superstrates for a-Si:H solar cells.

    Sahraei, Nasim; Forberich, Karen; Venkataraj, Selvaraj; Aberle, Armin G; Peters, Marius

    2014-01-13

    Light scattering at randomly textured interfaces is essential to improve the absorption of thin-film silicon solar cells. Aluminium-induced texture (AIT) glass provides suitable scattering for amorphous silicon (a-Si:H) solar cells. The scattering properties of textured surfaces are usually characterised by two properties: the angularly resolved intensity distribution and the haze. However, we find that the commonly used haze equations cannot accurately describe the experimentally observed spectral dependence of the haze of AIT glass. This is particularly the case for surface morphologies with a large rms roughness and small lateral feature sizes. In this paper we present an improved method for haze calculation, based on the power spectral density (PSD) function of the randomly textured surface. To better reproduce the measured haze characteristics, we suggest two improvements: i) inclusion of the average lateral feature size of the textured surface into the haze calculation, and ii) considering the opening angle of the haze measurement. We show that with these two improvements an accurate prediction of the haze of AIT glass is possible. Furthermore, we use the new equation to define optimum morphology parameters for AIT glass to be used for a-Si:H solar cell applications. The autocorrelation length is identified as the critical parameter. For the investigated a-Si:H solar cells, the optimum autocorrelation length is shown to be 320 nm.

  10. Effective Passivation and Tunneling Hybrid a-SiOx(In) Layer in ITO/n-Si Heterojunction Photovoltaic Device.

    Gao, Ming; Wan, Yazhou; Li, Yong; Han, Baichao; Song, Wenlei; Xu, Fei; Zhao, Lei; Ma, Zhongquan

    2017-05-24

    In this article, using controllable magnetron sputtering of indium tin oxide (ITO) materials on single crystal silicon at 100 °C, the optoelectronic heterojunction frame of ITO/a-SiO x (In)/n-Si is simply fabricated for the purpose of realizing passivation contact and hole tunneling. It is found that the gradation profile of indium (In) element together with silicon oxide (SiO x /In) within the ultrathin boundary zone between ITO and n-Si occurs and is characterized by X-ray photoelectron spectroscopy with the ion milling technique. The atomistic morphology and physical phase of the interfacial layer has been observed with a high-resolution transmission electron microscope. X-ray diffraction, Hall effect measurement, and optical transmittance with Tauc plot have been applied to the microstructure and property analyses of ITO thin films, respectively. The polycrystalline and amorphous phases have been verified for ITO films and SiO x (In) hybrid layer, respectively. For the quantum transport, both direct and defect-assisted tunneling of photogenerated holes through the a-SiO x (In) layer is confirmed. Besides, there is a gap state correlative to the indium composition and located at E v + 4.60 eV in the ternary hybrid a-SiO x (In) layer that is predicted by density functional theory of first-principles calculation, which acts as an "extended delocalized state" for direct tunneling of the photogenerated holes. The reasonable built-in potential (V bi = 0.66 V) and optimally controlled ternary hybrid a-SiO x (In) layer (about 1.4 nm) result in that the device exhibits excellent PV performance, with an open-circuit voltage of 0.540 V, a short-circuit current density of 30.5 mA/cm 2 , a high fill factor of 74.2%, and a conversion efficiency of 12.2%, under the AM 1.5 illumination. The work function difference between ITO (5.06 eV) and n-Si (4.31 eV) is determined by ultraviolet photoemission spectroscopy and ascribed to the essence of the built-in-field of the PV device

  11. Comparative performance evaluation of a new a-Si EPID that exceeds quad high-definition resolution.

    McConnell, Kristen A; Alexandrian, Ara; Papanikolaou, Niko; Stathakis, Sotiri

    2018-01-01

    Electronic portal imaging devices (EPIDs) are an integral part of the radiation oncology workflow for treatment setup verification. Several commercial EPID implementations are currently available, each with varying capabilities. To standardize performance evaluation, Task Group Report 58 (TG-58) and TG-142 outline specific image quality metrics to be measured. A LinaTech Image Viewing System (IVS), with the highest commercially available pixel matrix (2688x2688 pixels), was independently evaluated and compared to an Elekta iViewGT (1024x1024 pixels) and a Varian aSi-1000 (1024x768 pixels) using a PTW EPID QC Phantom. The IVS, iViewGT, and aSi-1000 were each used to acquire 20 images of the PTW QC Phantom. The QC phantom was placed on the couch and aligned at isocenter. The images were exported and analyzed using the epidSoft image quality assurance (QA) software. The reported metrics were signal linearity, isotropy of signal linearity, signal-tonoise ratio (SNR), low contrast resolution, and high-contrast resolution. These values were compared between the three EPID solutions. Computed metrics demonstrated comparable results between the EPID solutions with the IVS outperforming the aSi-1000 and iViewGT in the low and high-contrast resolution analysis. The performance of three commercial EPID solutions have been quantified, evaluated, and compared using results from the PTW QC Phantom. The IVS outperformed the other panels in low and high-contrast resolution, but to fully realize the benefits of the IVS, the selection of the monitor on which to view the high-resolution images is important to prevent down sampling and visual of resolution.

  12. Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

    Pochet, T.; Ilie, A.; Foulon, F.

    1993-01-01

    This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH 4 in helium. Rates of up to ten times (5.5 micrometer/h) that of the standard technique are obtained, allowing for the feasible fabrication of detectors having thickness up to 100 micrometers. The electrical characteristics (depletion voltage, residual space charge density) of the helium diluted material, have been investigated and compared to that of the standard material. The response of detectors, made from both materials, to 5.5 MeV alpha particles are compared. 6 figs., 5 tabs., 13 refs

  13. γ-radiation resistance of amorphous films of a-Si1-xGex:H solid solution

    Najafov, B.A.; Isakov, G.I.; Figarov, V.R.

    2004-01-01

    Full text: a-Si 1-x Ge x :H solid solution amorphous films (with x=0.4; 0.7, H=17 at. %) were fabricated by the plasma-chemical deposition method 1 μm thick, at the substrate temperature of 200 deg. C, the rate of deposition was 0.1 A /s, and the distance between the target and the substrate was L∼25 cm. The dispersion process was conducted in a hydrogenous plasma medium, that had been obtained with the use of a magnetron and a RF field. Taken ESR spectra of a-Si 1-x Ge x :H at 80 K were asymmetric in form, inasmuch as they were composed of two kinds relating to free bonds of Si and Ge, respectively. At the same time the observed signal was not a simple superposition of the two signals (for Si and for Ge), since they violently interacted with each other and the resulting signal in the intervening interval aimed to assume the form of a sole line. Because of this the observed spectrum on the left and on the right could be depicted by a superposition of the two signal: with g-factor of g=2.004-2.006 and the line width of 51-65 G and with g=2.018-2.022 and 73-86 G relating to the silicon and germanium free bonds, respectively. In this way it could be evaluated densities of Si and Ge free bonds, taken separately. But in accordance with computation of molecular orbitals in a-Si 1-x Ge x :H, the presence of atoms, adjacent to the orbitals, almost does not alter g-value of ESR-signals from both Si and Ge free bonds. By the IR absorption spectrum determining a number of Si-H bonds, and also a number of Ge-H bonds, it may assert that a number of Ge free bonds is 8-10 times larger than that of Si. It is proved that in a-Si 1 x Ge x : H films H atoms are mainly bound to Si atoms and so a total number of H is reduced with increasing of Ge content. That stands for the density of Ge free bonds decreases a number of H atoms, bound to Ge, but it does not a number of H atoms, bound to Si. This fact is also confirmed by ESR investigations. ESR investigations in a-Si 1-x Ge x :H

  14. Design of a crystalline undulator based on patterning by tensile Si3N4 strips on a Si crystal

    Guidi, V.; Lanzoni, L.; Mazzolari, A.; Martinelli, G.; Tralli, A.

    2007-01-01

    A crystalline undulator consists of a crystal with a periodic deformation in which channeled particles undergo oscillations and emit coherent undulator radiation. Patterning by an alternate series of tensile Si 3 N 4 strips on a Si crystal is shown to be a tractable method to construct a crystalline undulator. The method allows periodic deformation of the crystal with the parameters suitable for implementation of a crystalline undulator. The resulting periodic deformation is present in the bulk of the Si crystal with an essentially uniform amplitude, making the entire volume of the crystal available for channeling and in turn for emission of undulator radiation

  15. A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

    Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-11-01

    Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

  16. AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H

    Rojas-Lopez, M.; Orduna-Diaz, A.; Delgado-Macuil, R. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Olvera-Hernandez, J. [Centro de Investigacion en Dispositivos Semiconductores (CIDS), BUAP, Puebla, Pue. 72570 (Mexico); Navarro-Contreras, H.; Vidal, M.A.; Saucedo, N.; Mendez-Garcia, V.H. [Instituto de Investigacion en Comunicacion Optica (IICO), UASLP, San Luis Potosi, S.L.P. 78100 (Mexico)

    2007-04-15

    Atomic force microscopy and Fourier transform infrared spectroscopy were used to investigate the morphology of the microcrystalline surface, and also the amorphous-crystalline structural transformation of a-Si:H films, isothermally annealed during several hours. Crystallization process was strongly influenced by the deposition of an Al layer on the surface of a-Si:H samples. Representative AFM images show the presence of grains, which increase in diameter with the annealing time. Relative crystallized fraction as a function of the annealing time can be described adequately by using the Avrami equation. The kinetic of this crystallization process suggest a two-dimensional growth of the Si nuclei. Fourier transform infrared measurements show the presence of an intense band near 512 cm{sup -1} associated to Si-Si bonding. We observed the relative diminishing of the intensity of the Si-H wagging mode at 694 cm{sup -1} with annealing time, suggesting effusion of hydrogen to the surface of microcrystalline films. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Intrinsic and light induced gap states in a-Si:H materials and solar cells--effects of microstructure

    Wronski, C.R.; Pearce, J.M.; Deng, J.; Vlahos, V.; Collins, R.W

    2004-03-22

    The effects of microstructure on the gap states of hydrogen diluted and undiluted hydrogenated amorphous silicon (a-Si:H) thin film materials and their solar cells have been investigated. In characterizing the films the commonly used methodology of relating just the magnitudes of photocurrents and subgap absorption, {alpha}(E), was expanded to take into account states other than those due to dangling bond defects. The electron mobility-lifetime products were characterized as a function of carrier generation rates and analysis was carried out of the entire {alpha}(E) spectra and their evolution with light induced degradation. Two distinctly different defect states at 1.0 and 1.2 eV from the conduction band and their contributions to carrier recombination were identified and their respective evolution under 1 sun illumination characterized. Direct correlations were obtained between the recombination in thin films with that of corresponding solar cells. The effects of the difference in microstructure on the changes in these two gap states in films and solar cells were also identified. It is found that improved stability of protocrystalline Si:H can in part be attributed to the reduction of the 1.2 eV defects. It is also shown that ignoring the presence of multiple defects leads to erroneous conclusions being drawn about the stability of a-Si:H and SWE.

  18. Intrinsic and light induced gap states in a-Si:H materials and solar cells--effects of microstructure

    Wronski, C.R.; Pearce, J.M.; Deng, J.; Vlahos, V.; Collins, R.W.

    2004-01-01

    The effects of microstructure on the gap states of hydrogen diluted and undiluted hydrogenated amorphous silicon (a-Si:H) thin film materials and their solar cells have been investigated. In characterizing the films the commonly used methodology of relating just the magnitudes of photocurrents and subgap absorption, α(E), was expanded to take into account states other than those due to dangling bond defects. The electron mobility-lifetime products were characterized as a function of carrier generation rates and analysis was carried out of the entire α(E) spectra and their evolution with light induced degradation. Two distinctly different defect states at 1.0 and 1.2 eV from the conduction band and their contributions to carrier recombination were identified and their respective evolution under 1 sun illumination characterized. Direct correlations were obtained between the recombination in thin films with that of corresponding solar cells. The effects of the difference in microstructure on the changes in these two gap states in films and solar cells were also identified. It is found that improved stability of protocrystalline Si:H can in part be attributed to the reduction of the 1.2 eV defects. It is also shown that ignoring the presence of multiple defects leads to erroneous conclusions being drawn about the stability of a-Si:H and SWE

  19. Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

    Molpeceres, C. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain)], E-mail: carlos.molpeceres@upm.es; Lauzurica, S.; Garcia-Ballesteros, J.J.; Morales, M.; Guadano, G.; Ocana, J.L. [Centro Laser UPM, Univ. Politecnica de Madrid, Crta. de Valencia Km 7.3, 28031 Madrid (Spain); Fernandez, S.; Gandia, J.J. [Dept. de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda, Complutense 22, 28040 Madrid (Spain); Villar, F.; Nos, O.; Bertomeu, J. [CeRMAE Dept. Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona (Spain)

    2009-03-15

    Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.

  20. Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

    Molpeceres, C.; Lauzurica, S.; Garcia-Ballesteros, J.J.; Morales, M.; Guadano, G.; Ocana, J.L.; Fernandez, S.; Gandia, J.J.; Villar, F.; Nos, O.; Bertomeu, J.

    2009-01-01

    Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.

  1. Further insight on recombination losses in the intrinsic layer of a-Si:H solar cells using computer modeling tools

    Rubinelli, Francisco A.; Ramirez, Helena; Ruiz, Carlos M.; Schmidt, Javier A.

    2017-05-01

    Recombination losses of a-Si:H based p-i-n solar cells in the annealed state are analyzed with device computer modeling. Under AM1.5 illumination, the recombination rate in the intrinsic layer is shown to be controlled by a combination of losses through defect and tail states. The influence of the defect concentration on the characteristic parameters of a solar cell is analyzed. The impact on the light current-voltage characteristic curve of adopting very low free carrier mobilities and a high density of states at the band edge is explored under red and AM1.5 illumination. The distribution of trapped charge, electric field, and recombination loses inside the intrinsic layer is examined, and their influence on the solar cell performance is discussed. Solar cells with intrinsic layers deposited with and without hydrogen dilution are examined. It is found that the photocurrent at -2 V is not always a good approximation of the saturated reverse-bias photocurrent in a-Si:H p-i-n solar cells at room temperature. The importance of using realistic electrical parameters in solar cell simulations is emphasized.

  2. Critical Research for Cost-Effective Photoelectrochemical Production of Hydrogen

    Xu, Liwei [Midwest Optoelectronics, LLC, Toledo, OH (United States); Deng, Xunming [Univ. of Toledo, OH (United States); Abken, Anka [Midwest Optoelectronics, LLC, Toledo, OH (United States); Cao, Xinmin [Midwest Optoelectronics, LLC, Toledo, OH (United States); Du, Wenhui [Midwest Optoelectronics, LLC, Toledo, OH (United States); Vijh, Aarohi [Xunlight Corporation, Toledo, OH (United States); Ingler, William [Univ. of Toledo, OH (United States); Chen, Changyong [Univ. of Toledo, OH (United States); Fan, Qihua [Univ. of Toledo, OH (United States); Collins, Robert [Univ. of Toledo, OH (United States); Compaan, Alvin [Univ. of Toledo, OH (United States); Yan, Yanfa [Univ. of Toledo, OH (United States); Giolando, Dean [Univ. of Toledo, OH (United States); Turner, John [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2014-10-29

    The objective of this project is to develop critical technologies required for cost-effective production of hydrogen from sunlight and water using a-Si triple junction solar cell based photo-electrodes. In this project, Midwest Optoelectronics, LLC (MWOE) and its collaborating organizations utilize triple junction a-Si thin film solar cells as the core element to fabricate photoelectrochemical (PEC) cells. Triple junction a-Si/a-SiGe/a-SiGe solar cell is an ideal material for making cost-effective PEC system which uses sun light to split water and generate hydrogen. It has the following key features: 1) It has an open circuit voltage (Voc ) of ~ 2.3V and has an operating voltage around 1.6V. This is ideal for water splitting. There is no need to add a bias voltage or to inter-connect more than one solar cell. 2) It is made by depositing a-Si/a-SiGe/aSi-Ge thin films on a conducting stainless steel substrate which can serve as an electrode. When we immerse the triple junction solar cells in an electrolyte and illuminate it under sunlight, the voltage is large enough to split the water, generating oxygen at the Si solar cell side (for SS/n-i-p/sunlight structure) and hydrogen at the back, which is stainless steel side. There is no need to use a counter electrode or to make any wire connection. 3) It is being produced in large rolls of 3ft wide and up to 5000 ft long stainless steel web in a 25MW roll-to-roll production machine. Therefore it can be produced at a very low cost. After several years of research with many different kinds of material, we have developed promising transparent, conducting and corrosion resistant (TCCR) coating material; we carried out extensive research on oxygen and hydrogen generation catalysts, developed methods to make PEC electrode from production-grade a-Si solar cells; we have designed and tested various PEC module cases and carried out extensive outdoor testing; we were able to obtain a solar to hydrogen conversion efficiency (STH

  3. Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

    Frigeri, C.; Nasi, L.; Serenyi, M.; Khanh, N.Q.; Csik, A.; Szekrenyes, Zs.; Kamaras, K.

    2012-01-01

    Complete text of publication follows. Among the present available renewable energy sources, energy harvesting from sunlight by means of photovoltaic cells is the most attractive one. In order to win over the traditional energy resources both efficiency and cost effectiveness of photovoltaic conversion must be optimized as far as possible. Efficiency is basically improved by the use of multijunction cells containing semiconductors with different band-gap. In this respect, the III-V compounds guarantee the highest efficiency, up to 41.6 %, but they are quite expensive. The latter drawback also affects other compounds like CdTe and CuIn 1-x Ga x Se 2 (CIGS). Si based solar devices have lower efficiency but are much more cost effective. They can use either crystalline or amorphous Si thin layers or Si nanoparticles. As to the thin films, amorphous Si (a-Si) is preferred to crystalline Si as it has a wider band-gap (1.7 instead of 1.1 eV) thus harvesting a larger portion of solar energy. A tandem cell is formed by using a-SiGe which has a smaller band-gap tunable between 1.1 and 1.7 eV depending on the Ge content. The best value should be 1.4 eV since the material properties seem to degrade below this value whilst the photo-conductivity drops after light soaking if the band gap exceeds 1.4 eV. A key issue of amorphous Si, Ge and SiGe is the high density of defects in the band-gap mostly due to dangling bonds whose density is particularly high (even up to 5 x10 19 cm -3 ) since the lattice is significantly disordered with distorted bond angles and lengths. This increases the probability of rupture of the Si-Si (Ge-Ge) bonds, i.e., formation of dangling bonds. Owing to the fact that hydrogen with its single electron structure can close the dangling bonds, their density can be reduced even by 4 orders of magnitude by doping with hydrogen. However, H is unstable in the host lattice. In fact, several findings showed its evolution from the thin layer upon annealing and that

  4. Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi{sub 2}/n-Si heterojunction solar cells

    Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Takeuchi, Hiroki; Toko, Kaoru; Suemasu, Takashi, E-mail: suemasu@bk.tsukuba.ac.jp [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Du, Weijie [Key Laboratory of Optoelectronic Material and Device, College of Mathematics and Science, Shanghai Normal University, Shanghai 200234 (China)

    2016-08-15

    Fabrication of p-BaSi{sub 2}(20 nm)/n-Si heterojunction solar cells was performed with different a-Si capping layer thicknesses (d{sub a-Si}) and varying air exposure durations (t{sub air}) prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies (η) reached approximately 4.7% regardless of t{sub air} (varying from 12–150 h) for solar cells with d{sub a-Si} = 5 nm. In contrast, η increased from 5.3 to 6.6% with increasing t{sub air} for those with d{sub a-Si} = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density (J{sub 0}) and diode ideality factor decreased with t{sub air}, resulting in the enhancement of η. The effects of the variation of d{sub a-Si} (0.7, 2, 3, and 5 nm) upon the solar cell performance were examined while keeping t{sub air} = 150 h. The η reached a maximum of 9.0% when d{sub a-Si} was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and J{sub 0} exhibited a tendency to decrease as d{sub a-Si} increased. These results demonstrate that a moderate oxidation of BaSi{sub 2} is a very effective means to enhance the η of BaSi{sub 2} solar cells.

  5. Light trapping in a-Si/c-Si heterojunction solar cells by embedded ITO nanoparticles at rear surface

    Dhar, Sukanta; Mandal, Sourav; Mitra, Suchismita; Ghosh, Hemanta; Mukherjee, Sampad; Banerjee, Chandan; Saha, Hiranmoy; Barua, A. K.

    2017-12-01

    The advantages of the amorphous silicon (a-Si)/crystalline silicon (c-Si) hetero junction technology are low temperature (oxide (ITO) nanoparticles embedded in amorphous silicon material at the rear side of the crystalline wafer. The nanoparticles were embedded in silicon to have higher scattering efficiency, as has been established by simulation studies. It has been shown that significant photocurrent enhancements (32.8 mA cm-2 to 35.1 mA cm-2) are achieved because of high scattering and coupling efficiency of the embedded nanoparticles into the silicon device, leading to an increase in efficiency from 13.74% to 15.22%. In addition, we have observed a small increase in open circuit voltage. This may be due to the surface passivation during the ITO nanoparticle formation with hydrogen plasma treatment. We also support our experimental results by simulation, with the help of a commercial finite-difference time-domain (FDTD) software solution.

  6. Determination of phosphorus distribution in the region of a SiO2-Si interface by substoichiometric analysis

    Shigematsu, T.; Yonezawa, H.

    1994-01-01

    A simplified method for the substoichiometric analysis of phosphorus has been developed and applied to determine the concentration distribution of phosphorus in the region of a SiO 2 -Si interface in order to explain why phosphorus is lost from the ion-implanted silicon surface throughout the oxidation and oxide removal processes. It is revealed that phosphorus piles up on the SiO 2 side at the interface by the thermal oxidation of silicon surface and is removed with the oxide by wet etching and with the resulting silicon by RCA cleaning. This results in a total loss of ion-implanted phosphorus of 3.5%. (author) 11 refs.; 2 figs.; 3 tabs

  7. Adsorption of thiophene on a Si(0 0 1)-2 x 1 surface studied by photoelectron spectroscopy and diffraction

    Shimomura, M. [Research Institute of Electronics, Shizuoka University, Johoku, Hamamatsu 432-8011 (Japan)]. E-mail: romshimo@rie.shizuoka.ac.jp; Ikejima, Y. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yajima, K. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yagi, T. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira, Aoba-ku, Sendai 980-8577 (Japan); Goto, T. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira, Aoba-ku, Sendai 980-8577 (Japan); Gunnella, R. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira, Aoba-ku, Sendai 980-8577 (Japan); UdR INFM, Department of Physics, University of Camerino, Camerino 62032 (Italy); Abukawa, T. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira, Aoba-ku, Sendai 980-8577 (Japan); Fukuda, Y. [Research Institute of Electronics, Shizuoka University, Johoku, Hamamatsu 432-8011 (Japan); Kono, S. [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2004-10-15

    Chemisorption of thiophene on a Si(0 0 1) surface has been studied by synchrotron radiation induced photoelectron spectroscopy (SRPES). Two adsorption-related components in Si 2p and S 2p spectra are observed after exposure of thiophene. It is suggested that the two components of Si 2p are ascribed to silicon bonded to hydrocarbon and sulfur. The core-level shift resolved photoelectron diffraction (PED) result indicates that the low-kinetic-energy component of S 2p can be ascribed to 2,5-dihydrothiophehe (DHT)-like species. Another S 2p component could be assigned to dissociated sulfur based on the results of PED and time evolution of the spectrum under irradiation. These assignments are consistent with the core-level shift of S 2p.

  8. Adsorption of thiophene on a Si(0 0 1)-2 x 1 surface studied by photoelectron spectroscopy and diffraction

    Shimomura, M.; Ikejima, Y.; Yajima, K.; Yagi, T.; Goto, T.; Gunnella, R.; Abukawa, T.; Fukuda, Y.; Kono, S.

    2004-01-01

    Chemisorption of thiophene on a Si(0 0 1) surface has been studied by synchrotron radiation induced photoelectron spectroscopy (SRPES). Two adsorption-related components in Si 2p and S 2p spectra are observed after exposure of thiophene. It is suggested that the two components of Si 2p are ascribed to silicon bonded to hydrocarbon and sulfur. The core-level shift resolved photoelectron diffraction (PED) result indicates that the low-kinetic-energy component of S 2p can be ascribed to 2,5-dihydrothiophehe (DHT)-like species. Another S 2p component could be assigned to dissociated sulfur based on the results of PED and time evolution of the spectrum under irradiation. These assignments are consistent with the core-level shift of S 2p

  9. The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

    Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

    2018-03-01

    The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

  10. Nanoimprinted backside reflectors for a-Si:H thin-film solar cells: critical role of absorber front textures.

    Tsao, Yao-Chung; Fisker, Christian; Pedersen, Thomas Garm

    2014-05-05

    The development of optimal backside reflectors (BSRs) is crucial for future low cost and high efficiency silicon (Si) thin-film solar cells. In this work, nanostructured polymer substrates with aluminum coatings intended as BSRs were produced by positive and negative nanoimprint lithography (NIL) techniques, and hydrogenated amorphous silicon (a-Si:H) was deposited hereon as absorbing layers. The relationship between optical properties and geometry of front textures was studied by combining experimental reflectance spectra and theoretical simulations. It was found that a significant height variation on front textures plays a critical role for light-trapping enhancement in solar cell applications. As a part of sample preparation, a transfer NIL process was developed to overcome the problem of low heat deflection temperature of polymer substrates during solar cell fabrication.

  11. Role of interface states on electron transport in a-Si:H/nc-Si:H multilayer structures

    Yadav, Asha; Kumari, Juhi; Agarwal, Pratima

    2018-05-01

    In this paper we report, I-V characteristic of a-Si:H/nc-Si:H multilayer structures in lateral as well as transverse direction. In lateral geometry, where the interfaces are parallel to the direction of electronic transport, residual photo conductivity (persistent photoconductivity) is observed after the light was turned off. On the other hand, in transverse geometry, where interfaces are along the direction of electronic transport, the space charge limited currents are affected and higher density of states is obtained. The PPC was more in the structures where numbers of such interface were more. These results have been understood in terms of the charge carriers trapped at the interface, which influence the electronic transport.

  12. Silicon nanocrystals as light sources: stable, efficient and fast photoluminescence with suitable passivation

    Kůsová, Kateřina

    2012-01-01

    Roč. 9, 8/9 (2012), s. 717-731 ISSN 1475-7435 R&D Projects: GA AV ČR(CZ) IAA101120804; GA MŠk LC510; GA AV ČR KJB100100903 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon nanocrystals * surface passivation * photoluminescence * lasing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.087, year: 2012

  13. Numerical Optimization of a Bifacial Bi-Glass Thin-Film a-Si:H Solar Cell for Higher Conversion Efficiency

    Berrian, Djaber; Fathi, Mohamed; Kechouane, Mohamed

    2018-02-01

    Bifacial solar cells that maximize the energy output per a square meter have become a new fashion in the field of photovoltaic cells. However, the application of thin-film material on bifacial solar cells, viz., thin-film amorphous hydrogenated silicon ( a- Si:H), is extremely rare. Therefore, this paper presents the optimization and influence of the band gap, thickness and doping on the performance of a glass/glass thin-film a- Si:H ( n- i- p) bifacial solar cell, using a computer-aided simulation tool, Automat for simulation of hetero-structures (AFORS-HET). It is worth mentioning that the thickness and the band gap of the i-layer are the key parameters in achieving higher efficiency and hence it has to be handled carefully during the fabrication process. Furthermore, an efficient thin-film a- Si:H bifacial solar cell requires thinner and heavily doped n and p emitter layers. On the other hand, the band gap of the p-layer showed a dramatic reduction of the efficiency at 2.3 eV. Moreover, a high bifaciality factor of more than 92% is attained, and top efficiency of 10.9% is revealed under p side illumination. These optimizations demonstrate significant enhancements of the recent experimental work on thin-film a- Si:H bifacial solar cells and would also be useful for future experimental investigations on an efficient a- Si:H thin-film bifacial solar cell.

  14. Reliability improvement of a-Si:H thin film transistors on plastic substrate with saturation in deep state after multiple bending cycles

    Lee, M.H.; Chen, P.-G.; Hsu, C.-C.

    2013-01-01

    For flexible electronic applications, the disordered bonds of a-Si:H may generate a redistribution of trapped states with mechanical strain. During mechanical strain, the deep states are redistributed in a Gaussian distribution and are dissimilar to ordinary acceptor-like deep states, which manifest with exponential distributions. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs (thin film transistors) on flexible substrates. We conclude that it is possible to produce low-cost and highly uniform active-matrix organic light emitting diodes systems for use in flexible display applications using a-Si:H TFTs array backplanes. - Highlights: • The stress stability of a-Si:H TFTs (thin-film transistors) was improved after bending cycles. • The saturated deep states after bending were confirmed. • The simulation and extracted gap state density of a-Si:H TFT under strain was calculated

  15. Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO{sub x}/insulator structures from the results of synchrotron investigations

    Turishchev, S. Yu., E-mail: tsu@phys.vsu.ru; Terekhov, V. A.; Koyuda, D. A. [Voronezh State University (Russian Federation); Ershov, A. V.; Mashin, A. I. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Parinova, E. V.; Nesterov, D. N. [Voronezh State University (Russian Federation); Grachev, D. A.; Karabanova, I. A. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Domashevskaya, E. P. [Voronezh State University (Russian Federation)

    2017-03-15

    The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic a-SiO{sub x}/SiO{sub 2}, a-SiO{sub x}/Al{sub 2}O{sub 3}, and a-SiO{sub x}/ZrO{sub 2} compounds. Using synchrotron radiation and the X-ray absorption near edge structure (XANES) spectroscopy technique, a modification is revealed for the investigated structures under the effect of high-temperature annealing at the highest temperature of 1100°C; this modification is attributed to the formation of silicon nanocrystals in the layers of photoluminescent multilayer structures.

  16. Effect of the tunnelling oxide growth by H{sub 2}O{sub 2} oxidation on the performance of a-Si:H MIS photodiodes

    Aguas, H.; Perreira, L.; Silva, R.J.C.; Fortunato, E.; Martins, R

    2004-06-15

    In this work metal-insulator-semiconductor (MIS) photodiodes with a structure: Cr/a-Si:H(n{sup +})/a-Si:H(i)/oxide/Au were studied, where the main objective was to determine the influence of the oxide layer on the performance of the devices. The results achieved show that their performance is a function of both oxide thickness and oxide density. The a-Si:H oxidation method used was the immersion in H{sub 2}O{sub 2} solution. By knowledge of the oxide growth process it was possible to fabricate photodiodes exhibiting an open circuit voltage of 0.65 V and short circuit current density under AM1.5 illumination of 11 mA/cm{sup 2}, with a response times less than 1 {mu}s for load resistance <400 {omega}, and a signal to noise ratio of 1x10{sup 7}.

  17. A novel method to achieve selective emitter for silicon solar cell using low cost pattern-able a-Si thin films as the semi-transparent phosphorus diffusion barrier

    Chen, Da Ming; Liang, Zong Cun; Zhuang, Lin; Lin, Yang Huan; Shen, Hui

    2012-01-01

    Highlights: ► a-Si thin films as semitransparent phosphorus diffusion barriers for solar cell. ► a-Si thin films on silicon wafers were patterned by the alkaline solution. ► Selective emitter was formed with patterned a-Si as diffusion barrier for solar cell. -- Abstract: Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10–40 nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145 Ω/□ were obtained via POCl 3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15 nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing.

  18. Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

    Xiang, Yuren; Zhou, Chunlan; Jia, Endong; Wang, Wenjing

    2015-01-01

    In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al2O3 stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al2O3 film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al2O3 stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al2O3 stacks, the minimum interface trap density was reduced from original 3 × 10(12) to 1 × 10(12) cm(-2) eV(-1), the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10(12) cm(-2) for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al2O3 deposition on Al2O3 single layers and a-Si:H(i)/Al2O3 stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

  19. Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

    Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

    2009-01-01

    Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

  20. Development of Formulations for a-SiC and Manganese CMP and Post-CMP Cleaning of Cobalt

    Lagudu, Uma Rames Krishna

    We have investigated the chemical mechanical polishing (CMP) of amorphous SiC (a-SiC) and Mn and Post CMP cleaning of cobalt for various device applications. During the manufacture of copper interconnects using the damascene process the polishing of copper is followed by the polishing of the barrier material (Co, Mn, Ru and their alloys) and its post CMP cleaning. This is followed by the a-SiC hard mask CMP. Silicon carbide thin films, though of widespread use in microelectronic engineering, are difficult to process by CMP because of their hardness and chemical inertness. The earlier part of the SiC work discusses the development of slurries based on silica abrasives that resulted in high a-SiC removal rates (RRs). The ionic strength of the silica dispersion was found to play a significant role in enhancing material removal rate, while also providing very good post-polish surface-smoothness. For example, the addition of 50 mM potassium nitrate to a pH 8 aqueous slurry consisting of 10 wt % of silica abrasives and 1.47 M hydrogen peroxide increased the RR from about 150 nm/h to about 2100 nm/h. The role of ionic strength in obtaining such high RRs was investigated using surface zeta-potentials measurements and X-ray photoelectron spectroscopy (XPS). Evidently, hydrogen peroxide promoted the oxidation of Si and C to form weakly adhered species that were subsequently removed by the abrasive action of the silica particles. The effect of potassium nitrate in increasing material removal is attributed to the reduction in the electrostatic repulsion between the abrasive particles and the SiC surface because of screening of surface charges by the added electrolyte. We also show that transition metal compounds when used as additives to silica dispersions enhance a-SiC removal rates (RRs). Silica slurries containing potassium permanganate gave RRs as high as 2000 nm/h at pH 4. Addition of copper sulfate to this slurry further enhanced the RRs to ˜3500 nm/h at pH 6

  1. Changes of the temperature coefficients of the characteristics which accompany degradation and recovery of a-Si solar cells; A-Si taiyo denchi no hikari (denryu) rekka oyobi kaifuku ni tomonau tokusei ondo keisu no henka

    Yanagisawa, T; Koyanagi, T; Nakamura, K; Takahisa, K; Kojima, T [electrotechnical Laboratory, Tsukuba (Japan)

    1996-10-27

    Pursuant to the measuring of temperature dependency of the characteristics such as conversion efficiency, during the process of degradation in a-Si solar cells due to light and electric current and the process of recovery by annealing, this paper describes changes in temperature coefficients, correlation between the characteristic parameters and the degradation, and the results of the examination of their characteristics. The conversion efficiency {mu} degraded approximately by 45% of the initial value each by the irradiation under a light intensity with 3 SUN accelerated and by the infusion of current at 20mA/cm{sup 2}; and then, the efficiency recovered to 70-75% of the degradation by subsequent annealing. In addition, in the temperature dependency at 80{degree}C against at 20{degree}C, Isc slightly increased while Vcc greatly decreased. This slight increase in Isc was mainly due to the decrease in the width of the forbidden band, while the decrease in Vcc was due to the increase in the reverse saturation current. The temperature dependency of {mu}N was negative, becoming small in accordance with the degradation. The temperature dependency of FF/FFO was negative initially both in light and current, but it decreased with the degradation and turned to positive. The temperature coefficients of I-V parameters reversibly changed corresponding to the degradation and recovery of these parameters and stayed in a good correlation. 7 refs., 8 figs., 1 tab.

  2. Characterization of ion-assisted induced absorption in A-Si thin-films used for multivariate optical computing

    Nayak, Aditya B.; Price, James M.; Dai, Bin; Perkins, David; Chen, Ding Ding; Jones, Christopher M.

    2015-06-01

    Multivariate optical computing (MOC), an optical sensing technique for analog calculation, allows direct and robust measurement of chemical and physical properties of complex fluid samples in high-pressure/high-temperature (HP/HT) downhole environments. The core of this MOC technology is the integrated computational element (ICE), an optical element with a wavelength-dependent transmission spectrum designed to allow the detector to respond sensitively and specifically to the analytes of interest. A key differentiator of this technology is it uses all of the information present in the broadband optical spectrum to determine the proportion of the analyte present in a complex fluid mixture. The detection methodology is photometric in nature; therefore, this technology does not require a spectrometer to measure and record a spectrum or a computer to perform calculations on the recorded optical spectrum. The integrated computational element is a thin-film optical element with a specific optical response function designed for each analyte. The optical response function is achieved by fabricating alternating layers of high-index (a-Si) and low-index (SiO2) thin films onto a transparent substrate (BK7 glass) using traditional thin-film manufacturing processes (e.g., ion-assisted e-beam vacuum deposition). A proprietary software and process are used to control the thickness and material properties, including the optical constants of the materials during deposition to achieve the desired optical response function. The ion-assisted deposition is useful for controlling the densification of the film, stoichiometry, and material optical constants as well as to achieve high deposition growth rates and moisture-stable films. However, the ion-source can induce undesirable absorption in the film; and subsequently, modify the optical constants of the material during the ramp-up and stabilization period of the e-gun and ion-source, respectively. This paper characterizes the unwanted

  3. Selective scanning tunnelling microscope electron-induced reactions of single biphenyl molecules on a Si(100) surface.

    Riedel, Damien; Bocquet, Marie-Laure; Lesnard, Hervé; Lastapis, Mathieu; Lorente, Nicolas; Sonnet, Philippe; Dujardin, Gérald

    2009-06-03

    Selective electron-induced reactions of individual biphenyl molecules adsorbed in their weakly chemisorbed configuration on a Si(100) surface are investigated by using the tip of a low-temperature (5 K) scanning tunnelling microscope (STM) as an atomic size source of electrons. Selected types of molecular reactions are produced, depending on the polarity of the surface voltage during STM excitation. At negative surface voltages, the biphenyl molecule diffuses across the surface in its weakly chemisorbed configuration. At positive surface voltages, different types of molecular reactions are activated, which involve the change of adsorption configuration from the weakly chemisorbed to the strongly chemisorbed bistable and quadristable configurations. Calculated reaction pathways of the molecular reactions on the silicon surface, using the nudge elastic band method, provide evidence that the observed selectivity as a function of the surface voltage polarity cannot be ascribed to different activation energies. These results, together with the measured threshold surface voltages and the calculated molecular electronic structures via density functional theory, suggest that the electron-induced molecular reactions are driven by selective electron detachment (oxidation) or attachment (reduction) processes.

  4. A new technique to modify hypereutectic Al-24%Si alloys by a Si-P master alloy

    Wu Yaping; Wang Shujun; Li Hui [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, 73 Jingshi Road, Jinan 250061 (China); Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, 73 Jingshi Road, Jinan 250061 (China)], E-mail: xfliu@sdu.edu.cn

    2009-05-27

    The modification effect of a Si-P master alloy on Al-24%Si alloy was investigated by using electron probe micro-analyzer (EPMA) and optical microscopy (OM). The dissolution problem of the Si-P master alloys was solved by changing the sequence of addition. When the Si-P master alloy was added into Al melt before the addition of silicon, the best modification effect could be achieved. The modification parameters of the master alloy on Al-24%Si alloy were optimized through designing and analyzing the orthogonal experiment, and their influences on the modification effect were discussed. The results show that the influence of temperature on the modification effect is the greatest, followed by the addition level, and the holding time is the least. The optimized modification parameters are the modification temperature of 810 deg. C, the addition level of 0.35 wt.%, the holding time of 30 min + 50 min whose meaning is that the Si-P master alloy is added firstly to the molten Al, and silicon is added 30 min later, then holding another 50 min. In addition, the modification mechanism of the Si-P master alloy on Al-24%Si alloy was also discussed.

  5. Fast neutron detection at near-core location of a research reactor with a SiC detector

    Wang, Lei; Jarrell, Josh; Xue, Sha; Tan, Chuting; Blue, Thomas; Cao, Lei R.

    2018-04-01

    The measurable charged-particle produced from the fast neutron interactions with the Si and C nucleuses can make a wide bandgap silicon carbide (SiC) sensor intrinsically sensitive to neutrons. The 4H-SiC Schottky detectors have been fabricated and tested at up to 500 °C, presenting only a slightly degraded energy resolution. The response spectrum of the SiC detectors were also obtained by exposing the detectors to external neutron beam irradiation and at a near-core location where gamma-ray field is intense. The fast neutron flux of these two locations are ∼ 4 . 8 × 104cm-2 ṡs-1 and ∼ 2 . 2 × 107cm-2 ṡs-1, respectively. At the external beam location, a Si detector was irradiated side-by-side with SiC detector to disjoin the neutron response from Si atoms. The contribution of gamma ray, neutron scattering, and charged-particles producing reactions in the SiC was discussed. The fast neutron detection efficiencies were determined to be 6 . 43 × 10-4 for the external fast neutron beam irradiation and 6 . 13 × 10-6 for the near-core fast neutron irradiation.

  6. Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells

    Pincik, E.; Kobayashi, H.; Takahashi, M.; Fujiwara, N.; Brunner, R.; Gleskova, H.; Jergel, M.; Muellerova, J.; Kucera, M.; Falcony, C.; Ortega, L.; Rusnak, J.; Mikula, M.; Zahoran, M.; Jurani, R.; Kral, M.

    2004-01-01

    This paper deals with the photoluminescence, structural and electrical properties of chemically passivated a-Si:H based thin films and corresponding thin film solar cells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electrical properties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solar cells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solar cell multilayer structures was achieved which is of primary practical importance

  7. Energy-dispersive X-ray fluorescence of discarded tire samples, using a Si-PIN detector

    Lopes, Fabio; Appoloni, C.R.; Melquiades, Fabio L.

    2007-01-01

    The determination of zinc concentration in samples of discarded tires is of great environmental interest because the process for manufacturing tyres uses S for rubber vulcanization, and ZnO is the reaction catalyst. Discarded tyres are being used in asphalt paving, in the burning process of thermoelectric and cement industries and also for controlling erosion in agricultural areas. Analysis of tyre samples usually requires chemical digestion which is slow and expensive. Aiming to eliminate those limitations, this work uses energy-dispersive X-ray fluorescence (EDXRF) with a portable equipment, once it is a simultaneous multi-element analytical technique, requiring minimal sample preparation. Five samples of discarded tyres have been ground and analysed in the form of pastilles, using a mini X-ray tube (Ag target, MO filter, 25 kV/20 μA) for 200 s, and a Si-PIN semiconductor detector coupled to a multichannel analyser. Zinc concentrations in the range of 40.6 to 44.2 μg g -1 have been obtained, representing 0.4% of the tire composition, which is below the maximum value (2%) recommended by the European Tyre Recycling Association. Concentrations between 0.15 and 0.52 μg g -1 were obtained for Fe

  8. The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

    Chang Jian-Guang; Wu Chun-Bo; Ji Xiao-Li; Ma Hao-Wen; Yan Feng; Shi Yi; Zhang Rong

    2012-01-01

    We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process. It is found that with the conventional Ni silicide method, the leakage current of a p + (SiGe)—n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film. In addition, the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film. As a result, the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology. (cross-disciplinary physics and related areas of science and technology)

  9. Evolution of a Native Oxide Layer at the a-Si:H/c-Si Interface and Its Influence on a Silicon Heterojunction Solar Cell.

    Liu, Wenzhu; Meng, Fanying; Zhang, Xiaoyu; Liu, Zhengxin

    2015-12-09

    The interface microstructure of a silicon heterojunction (SHJ) solar cell was investigated. We found an ultrathin native oxide layer (NOL) with a thickness of several angstroms was formed on the crystalline silicon (c-Si) surface in a very short time (∼30 s) after being etched by HF solution. Although the NOL had a loose structure with defects that are detrimental for surface passivation, it acted as a barrier to restrain the epitaxial growth of hydrogenated amorphous silicon (a-Si:H) during the plasma-enhanced chemical vapor deposition (PECVD). The microstructure change of the NOL during the PECVD deposition of a-Si:H layers with different conditions and under different H2 plasma treatments were systemically investigated in detail. When a brief H2 plasma was applied to treat the a-Si:H layer after the PECVD deposition, interstitial oxygen and small-size SiO2 precipitates were transformed to hydrogenated amorphous silicon suboxide alloy (a-SiO(x):H, x ∼ 1.5). In the meantime, the interface defect density was reduced by about 50%, and the parameters of the SHJ solar cell were improved due to the post H2 plasma treatment.

  10. Explicit analytical modeling of the low frequency a-Si:H/c-Si heterojunction capacitance: Analysis and application to silicon heterojunction solar cells

    Maslova, O. [Keldysh Institute of Applied Mathematics, Russian Academy of Sciences, Miusskaya sq., 4, Moscow 125047 (Russian Federation); GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France); Brézard-Oudot, A.; Gueunier-Farret, M.-E.; Alvarez, J.; Kleider, J.-P. [GeePs (Group of electrical engineering of Paris), CNRS UMR 8507, CentraleSupélec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex (France)

    2015-09-21

    We develop a fully analytical model in order to describe the temperature dependence of the low frequency capacitance of heterojunctions between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). We demonstrate that the slope of the capacitance-temperature (C-T) curve is strongly enhanced if the c-Si surface is under strong inversion conditions compared to the usually assumed depletion layer capacitance. We have extended our analytical model to integrate a very thin undoped (i) a-Si:H layer at the interface and the finite thickness of the doped a-Si:H layer that are used in high efficiency solar cells for the passivation of interface defects and to limit short circuit current losses. Finally, using our calculations, we analyze experimental data on high efficiency silicon heterojunction solar cells. The transition from the strong inversion limited behavior to the depletion layer behavior is discussed in terms of band offsets, density of states in a-Si:H, and work function of the indium tin oxide (ITO) front electrode. In particular, it is evidenced that strong inversion conditions prevail at the c-Si surface at high temperatures down to 250 K, which can only be reproduced if the ITO work function is larger than 4.7 eV.

  11. Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

    Angermann, H. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany)], E-mail: angermann@hmi.de; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany); Huebener, K.; Hauschild, J. [Freie Universitaet Berlin, FB Physik, Arnimallee 14, 14195 Berlin (Germany)

    2008-08-30

    The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D{sub it}(E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency.

  12. Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

    Angermann, H.; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M.; Huebener, K.; Hauschild, J.

    2008-01-01

    The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D it (E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency

  13. MS-XANES studies on the interface effect of semiconductor InSb nanoparticles embedded in a-SiO2 matrix

    Chen Dongliang; Wu Ziyu; Wei Shiqiang

    2006-01-01

    The interface effect of semiconductor InSb nanoparticles (NPs) embedded in a-SiO 2 matrix was investigated via multi-scattering XANES simulations. The results show that the white line increase and broadening to higher energies of InSb NPs embedded in a-SiO 2 host matrix are mainly due to the interaction of InSb NPs and a-SiO 2 matrix. It can be interpreted as both a local single-site effect on μ 0 (E) due to the effect of a-SiO 2 matrix on Sb intra-atomic potential and the increase in 5p-hole population due to 5p-electron depletion in Sb for the InSb NPs embedded in SiO 2 matrix. On the other hand, our result reveals evidently that it is not reasonable to estimate the 5p-hole counts only according to the intensity of the white line due to the interface effect of nanoparticles. (authors)

  14. Radicals and ions controlling by adjusting the antenna-substrate distance in a-Si:H deposition using a planar ICP for c-Si surface passivation

    Zhou, H.P., E-mail: haipzhou@uestc.edu.cn [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, S., E-mail: shuyan.xu@nie.edu.sg [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xu, M. [Key Laboratory of Information Materials of Sichuan Province & School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu, 610041 (China); Xu, L.X.; Wei, D.Y. [Plasma Sources and Application Center, NIE, and Institute of Advanced Studies, Nanyang Technological University, 637616 (Singapore); Xiang, Y. [School of Energy Science and Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Ave., West High-Tech Zone, Chengdu, Sichuan, 611731 (China); Xiao, S.Q. [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122 (China)

    2017-02-28

    Highlights: • A planar ICP was used to grow a-Si:H films for c-Si surface passivation. • The direct- and remote-plasma was compared for high-quality c-Si surface passivation. • The remote ICP with controlled plasma species and ion bombardments is preferable for the surface passivation of c-Si. - Abstract: Being a key issue in the research and fabrication of silicon heterojunction (SHJ) solar cells, crystalline silicon (c-Si) surface passivation is theoretically and technologically intricate due to its complicate dependence on plasma characteristics, material properties, and plasma-material interactions. Here amorphous silicon (a-Si:H) grown by a planar inductively coupled plasma (ICP) reactor working under different antenna-substrate distances of d was used for the surface passivation of low-resistivity p-type c-Si. It is found that the microstructures (i.e., the crystallinity, Si-H bonding configuration etc.) and passivation function on c-Si of the deposited a-Si:H were profoundly influenced by the parameter of d, which primarily determines the types of growing precursors of SiH{sub n}/H contributing to the film growth and the interaction between the plasma and growing surface. c-Si surface passivation is analyzed in terms of the d-dependent a-Si:H properties and plasma characteristics. The controlling of radical types and ion bombardment on the growing surface through adjusting parameter d is emphasized.

  15. Robustness up to 400°C of the passivation of c-Si by p-type a-Si:H thanks to ion implantation

    Defresne, A.; Plantevin, O.; Roca i Cabarrocas, Pere

    2016-12-01

    Heterojunction solar cells based on crystalline silicon (c-Si) passivated by hydrogenated amorphous silicon (a-Si:H) thin films are one of the most promising architectures for high energy conversion efficiency. Indeed, a-Si:H thin films can passivate both p-type and n-type wafers and can be deposited at low temperature (layers, in particular p-type a-Si:H, show a dramatic degradation in passivation quality above 200°C. Yet, annealing at 300 - 400°C the TCO layer and metallic contacts is highly desirable to reduce the contact resistance as well as the TCO optical absorption. In this work, we show that as expected, ion implantation (5 - 30 keV) introduces defects at the c-Si/a-Si:H interface which strongly degrade the effective lifetime, down to a few micro-seconds. However, the passivation quality can be restored and lifetime values can be improved up to 2 ms over the initial value with annealing. We show here that effective lifetimes above 1 ms can be maintained up to 380°C, opening up the possibility for higher process temperatures in silicon heterojunction device fabrication.

  16. The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

    Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

    2010-12-28

    Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

  17. Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

    Dolui, Kapildeb; Rungger, Ivan; Sanvito, Stefano

    2013-01-01

    Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect

  18. Improving the back surface field on an amorphous silicon carbide (a-SiC:H) thin film photocathode for solar water splitting

    Perez Rodriguez, P.; Cardenas-Morcoso, Drialys; Digdaya, I.A.; Mangel Raventos, A.; Procel Moya, P.A.; Isabella, O.; Gimenez, Sixto; Zeman, M.; Smith, W.A.; Smets, A.H.M.

    2018-01-01

    Amorphous silicon carbide (a-SiC:H) is a promising material for photoelectrochemical water splitting owing to its relatively small band-gap energy and high chemical and optoelectrical stability. This work studies the interplay between charge-carrier separation and collection, and their injection

  19. Dangling-bond defect in a-Si:H : Characterization of network and strain effects by first-principles calculation of the EPR parameters

    Pfanner, G.; Freysoldt, C.; Neugebauer, J.; Inam, F.; Drabold, D.; Jarolimek, K.; Zeman, M.

    2013-01-01

    The performance of hydrogenated amorphous silicon (a-Si:H) solar cells is severely affected by the light-induced formation of metastable defects in the material (Staebler-Wronski effect). The common notion is that the dangling-bond (db) defect, a threefold coordinated silicon atom, plays a key role

  20. Study of the hydrogen behavior in amorphous hydrogenated materials of type a - C:H and a - SiC:H facing fusion reactor plasma

    Barbier, G.

    1997-01-01

    Plasma facing components of controlled fusion test devices (tokamaks) are submitted to several constraints (irradiation, high temperatures). The erosion (physical sputtering and chemical erosion) and the hydrogen recycling (retention and desorption) of these materials influence many plasma parameters and thus affect drastically the tokamak running. First, we will describe the different plasma-material interactions. It will be pointed out, how erosion and hydrogen recycling are strongly related to both chemical and physical properties of the material. In order to reduce these interactions, we have selected two amorphous hydrogenated materials (a-C:H and a-SiC:H), which are known for their good thermal and chemical qualities. Some samples have been then implanted with lithium ions at different fluences. Our materials have been then irradiated with deuterium ions at low energy. From our results, it is shown that both the lithium implantation and the use of an a - SiC:H substrate can be beneficial in enhancing the hydrogen retention. These results were completed with thermal desorption studies of these materials. It was evidenced that the hydrogen fixation was more efficient in a-SiC:H than in a-C:H substrate. Results in good agreement with those described above have been obtained by exposing a - C:H and a - SiC:H samples to the scrape off layer of the tokamak of Varennes (TdeV, Canada). A modelling of hydrogen diffusion under irradiation has been also proposed. (author)

  1. Hydrogen behaviour study in plasma facing a-C:H and a-SiC:H hydrogenated amorphous materials for fusion reactors

    Barbier, Gauzelin

    1997-01-01

    Plasma facing components of controlled fusion test devices (tokamaks) are submitted to several constraints (irradiation, high temperatures). The erosion (physical sputtering and chemical erosion) and the hydrogen recycling (retention and desorption) of these materials influence many plasma parameters and thus affect drastically the tokamak running. Firstly, we will describe the different plasma-material interactions. It will be pointed out, how erosion and hydrogen recycling are strongly related to both chemical and physical properties of the material. In order to reduce this interactions, we have selected two amorphous hydrogenated materials (a-C:H and a-SiC:H), which are known for their good thermal and chemical qualities. Some samples have been then implanted with lithium ions at different fluences. Our materials have been then irradiated with deuterium ions at low energy. From our results, it is shown that both the lithium implantation and the use of an a-SiC:H substrate can be benefit in enhancing the hydrogen retention. These results were completed with thermal desorption studies of these materials. It was evidenced that the hydrogen fixation was more efficient in a -SiC:H than in a-C:H substrate. Results in good agreement with those described above have been obtained by exposing a-C:H and a-SiC:H samples to the scrape off layer of the tokamak of Varennes (TdeV, Canada). A modeling of hydrogen diffusion under irradiation has been also proposed. (author)

  2. Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

    Macco, B.; Deligiannis, D.; Smit, S.; Swaaij, van R.A.C.M.M.; Zeman, M.; Kessels, W.M.M.

    2014-01-01

    In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigated for Al-doped zinc oxide (ZnO:Al) layers made by

  3. Plasmon-Enhanced Photoluminescence of an Amorphous Silicon Quantum Dot Light-Emitting Device by Localized Surface Plasmon Polaritons in Ag/SiOx:a-Si QDs/Ag Sandwich Nanostructures

    Tsung-Han Tsai

    2015-01-01

    Full Text Available We investigated experimentally the plasmon-enhanced photoluminescence of the amorphous silicon quantum dots (a-Si QDs light-emitting devices (LEDs with the Ag/SiOx:a-Si QDs/Ag sandwich nanostructures, through the coupling between the a-Si QDs and localized surface plasmons polaritons (LSPPs mode, by tuning a one-dimensional (1D Ag grating on the top. The coupling of surface plasmons at the top and bottom Ag/SiOx:a-Si QDs interfaces resulted in the localized surface plasmon polaritons (LSPPs confined underneath the Ag lines, which exhibit the Fabry-Pérot resonance. From the Raman spectrum, it proves the existence of a-Si QDs embedded in Si-rich SiOx film (SiOx:a-Si QDs at a low annealing temperature (300°C to prevent the possible diffusion of Ag atoms from Ag film. The photoluminescence (PL spectra of a-Si QDs can be precisely tuned by a 1D Ag grating with different pitches and Ag line widths were investigated. An optimized Ag grating structure, with 500 nm pitch and 125 nm Ag line width, was found to achieve up to 4.8-fold PL enhancement at 526 nm and 2.46-fold PL integrated intensity compared to the a-Si QDs LEDs without Ag grating structure, due to the strong a-Si QDs-LSPPs coupling.

  4. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Zeng, Xiangbin, E-mail: eexbzeng@mail.hust.edu.cn; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-04-30

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B{sub 2}H{sub 6} flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10{sup −3} Ω cm, mobility of 16.5–25.5 cm{sup 2}/Vs, and carrier concentration of 2.2–2.7 × 10{sup 20} cm{sup −3} were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n{sup +}-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm{sup 2} and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm{sup 2} and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  5. Boron-doped zinc oxide thin films grown by metal organic chemical vapor deposition for bifacial a-Si:H/c-Si heterojunction solar cells

    Zeng, Xiangbin; Wen, Xixing; Sun, Xiaohu; Liao, Wugang; Wen, Yangyang

    2016-01-01

    Boron-doped zinc oxide (BZO) films were grown by metal organic chemical vapor deposition. The influence of B_2H_6 flow rate and substrate temperature on the microstructure, optical, and electrical properties of BZO films was investigated by X-ray diffraction spectrum, scanning electron microscope, optical transmittance spectrum, and Hall measurements. The BZO films with optical transmittance above 85% in the visible and infrared light range, resistivity of 0.9–1.0 × 10"−"3 Ω cm, mobility of 16.5–25.5 cm"2/Vs, and carrier concentration of 2.2–2.7 × 10"2"0 cm"−"3 were deposited under optimized conditions. The optimum BZO films were applied on the bifacial BZO/p-type a-Si:H/i-type a-Si:H/n-type c-Si/i-type a-Si:H/n"+-type a-Si:H/BZO heterojunction solar cell as both front and back transparent electrodes. Meanwhile, the bifacial heterojunction solar cell with indium tin oxide (ITO) as both front and back transparent electrodes was fabricated. The efficiencies of 17.788% (open-circuit voltage: 0.628 V, short-circuit current density: 41.756 mA/cm"2 and fill factor: 0.678) and 16.443% (open-circuit voltage: 0.590 V, short-circuit current density: 36.515 mA/cm"2 and fill factor: 0.762) were obtained on the a-Si/c-Si heterojunction solar cell with BZO and ITO transparent electrodes, respectively. - Highlights: • Boron-doped zinc oxide films with low resistivity were fabricated. • The boron-doped zinc oxide films have the high transmittance. • B-doped ZnO film was applied in a-Si:H/c-Si solar cell as transparent electrodes. • The a-Si:H/c-Si solar cell with efficiency of 17.788% was obtained.

  6. Effects of the c-Si/a-SiO2 interfacial atomic structure on its band alignment: an ab initio study.

    Zheng, Fan; Pham, Hieu H; Wang, Lin-Wang

    2017-12-13

    The crystalline-Si/amorphous-SiO 2 (c-Si/a-SiO 2 ) interface is an important system used in many applications, ranging from transistors to solar cells. The transition region of the c-Si/a-SiO 2 interface plays a critical role in determining the band alignment between the two regions. However, the question of how this interface band offset is affected by the transition region thickness and its local atomic arrangement is yet to be fully investigated. Here, by controlling the parameters of the classical Monte Carlo bond switching algorithm, we have generated the atomic structures of the interfaces with various thicknesses, as well as containing Si at different oxidation states. A hybrid functional method, as shown by our calculations to reproduce the GW and experimental results for bulk Si and SiO 2 , was used to calculate the electronic structure of the heterojunction. This allowed us to study the correlation between the interface band characterization and its atomic structures. We found that although the systems with different thicknesses showed quite different atomic structures near the transition region, the calculated band offset tended to be the same, unaffected by the details of the interfacial structure. Our band offset calculation agrees well with the experimental measurements. This robustness of the interfacial electronic structure to its interfacial atomic details could be another reason for the success of the c-Si/a-SiO 2 interface in Si-based electronic applications. Nevertheless, when a reactive force field is used to generate the a-SiO 2 and c-Si/a-SiO 2 interfaces, the band offset significantly deviates from the experimental values by about 1 eV.

  7. Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis

    Khanh, N.Q.; Serenyi, M.

    2010-01-01

    Compete text of publication follows. Hydrogenated amorphous Si and Ge films are of current interest in academic and industrial research due to their unique physical properties and important applications. The incorporation of hydrogen in the amorphous network is an accepted means for reducing the density of defect states in the midgap. The passivation of dangling-bonds leads to a significant improvement in the electronic and optical properties of these layers. However, hydrogen is also suspected to degrade the performance of amorphous Si and Ge material and devices. Several studies related to hydrogen motion have been proposed to explain the light and thermal degradation effect in these layers. Thus to improve the performance and reliability of these devices, it is crucially important to understand the role of hydrogen in amorphous layers. In our previous works the structural changes of hydrogenated a-Si/Ge multilayers as a function of annealing condition was investigated. It was shown that during annealing the samples underwent significant structural changes. Due to the fast out-diffusion of hydrogen from the layers prepared with high (6 ml/min) H 2 flow rate, bubbles and craters were created on the surface. However, in the multilayer samples prepared with hydrogen flow rate lower than 6 ml/min the macroscopic degradation by formation bubbles and craters was more moderated. The diffusion measurement shows that in these samples the structural degradation and intermixing of layers was slower than in the non-hydrogenated samples. As it was suggested the hydrogen can inactivate the dangling bonds of amorphous layers and, as a result of this, the intermixing slows down. It was also predicted that the hydrogen first released from the Ge layers because of the lower binding energy. In this work, we have studied the individual a-Si and a-Ge hydrogenated layers prepared by RF sputtering on Si (100) substrates. The absolute value of atomic content of the H was determined by

  8. Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot

    Kawakami, Erika

    2015-03-01

    Electron spins in Si/SiGe quantum dots are one of the most promising candidates for a quantum bit for their potential to scale up and their long dephasing time. We realized coherent control of single electron spin in a single quantum dot (QD) defined in a Si/SiGe 2D electron gas. Spin rotations are achieved by applying microwave excitation to one of the gates, which oscillates the electron wave function back and forth in the gradient field produced by cobalt micromagnets fabricated near the dot. The electron spin is read out in single-shot mode via spin-to-charge conversion and a QD charge sensor. In earlier work, both the fidelity of single-spin rotations and the spin echo decay time were limited by a small splitting of the lowest two valleys. By changing the direction and magnitude of the external magnetic field as well as the gate voltages that define the dot potential, we were able to increase the valley splitting and also the difference in Zeeman splittings associated with these two valleys. This has resulted in considerable improvements in the gate fidelity and spin echo decay times. Thanks to the long intrinsic dephasing time T2* = 900 ns and Rabi frequency of 1.4 MHz, we now obtain an average single qubit gate fidelity of an electron spin in a Si/SiGe quantum dot of 99 percent, measured via randomized benchmarking. The dephasing time is extended to 70 us for the Hahn echo and up to 400 us with CPMG80. From the dynamical decoupling data, we extract the noise spectral density in the range of 30 kHz-3 MHz. We will discuss the mechanism that induces this noise and is responsible for decoherence. In parallel, we also realized electron spin resonance and coherent single-spin control by second harmonic generation, which means we can drive an electron spin at half the Larmor frequency. Finally, we observe not only single-spin transitions but also transitions whereby both the spin and the valley state are flipped. Altogether, these measurements have significantly

  9. SU-F-T-263: Dosimetric Characteristics of the Cine Acquisition Mode of An A-Si EPID

    Bawazeer, O; Deb, P [RMIT University, Melbourne, VIC (Australia); Sarasanandarajah, S [Peter MacCallum Cancer Institute, Melbourne, Victoria (Australia); Herath, S; Kron, T [Peter MacCallum Cancer Institute, Melbourne, VIC (Australia)

    2016-06-15

    Purpose: To investigate the dosimetric characteristics of Varian a-Si-500 electronic portal imaging device (EPID) operated in cine mode particularly considering linearity with delivered dose, dose rate, field size, phantom thickness, MLC speed and common IMRT fields. Methods: The EPID that attached to a Varian Clinac 21iX linear accelerator, was irradiated with 6 and 18 MV using 600 MU/min. Image acquisition is controlled by the IAS3 software, Trigger delay was 6 ms, BeamOnDelay and FrameStartDelay were zero. Different frame rates were utilized. Cine mode response was calculated using MATLAB as summation of mean pixel values in a region of interest of the acquired images. The performance of cine mode was compared to integrated mode and dose measurements in water using CC13 ionization chamber. Results: Figure1 illustrates that cine mode has nonlinear response for small MU, when delivering 10 MU was about 0.5 and 0.64 for 6 and 18 MV respectively. This is because the missing acquired images that were calculated around four images missing in each delivery. With the increase MU the response became linear and comparable with integrated mode and ionization chamber within 2%. Figure 2 shows that cine mode has comparable response with integrated mode and ionization chamber within 2% with changing dose rate for 10 MU delivered. This indicates that the dose rate change has no effect on nonlinearity of cine mode response. Except nonlinearity, cine mode is well matched to integrated mode response within 2% for field size, phantom thickness, MLC speed dependences. Conclusion: Cine mode has similar dosimetric characteristics to integrated mode with open and IMRT fields, and the main limitation with cine mode is missing images. Therefore, the calibration of EPID images with this mode should be run with large MU, and when IMRT verification field has low MU, the correction for missing images are required.

  10. SU-F-T-263: Dosimetric Characteristics of the Cine Acquisition Mode of An A-Si EPID

    Bawazeer, O; Deb, P; Sarasanandarajah, S; Herath, S; Kron, T

    2016-01-01

    Purpose: To investigate the dosimetric characteristics of Varian a-Si-500 electronic portal imaging device (EPID) operated in cine mode particularly considering linearity with delivered dose, dose rate, field size, phantom thickness, MLC speed and common IMRT fields. Methods: The EPID that attached to a Varian Clinac 21iX linear accelerator, was irradiated with 6 and 18 MV using 600 MU/min. Image acquisition is controlled by the IAS3 software, Trigger delay was 6 ms, BeamOnDelay and FrameStartDelay were zero. Different frame rates were utilized. Cine mode response was calculated using MATLAB as summation of mean pixel values in a region of interest of the acquired images. The performance of cine mode was compared to integrated mode and dose measurements in water using CC13 ionization chamber. Results: Figure1 illustrates that cine mode has nonlinear response for small MU, when delivering 10 MU was about 0.5 and 0.64 for 6 and 18 MV respectively. This is because the missing acquired images that were calculated around four images missing in each delivery. With the increase MU the response became linear and comparable with integrated mode and ionization chamber within 2%. Figure 2 shows that cine mode has comparable response with integrated mode and ionization chamber within 2% with changing dose rate for 10 MU delivered. This indicates that the dose rate change has no effect on nonlinearity of cine mode response. Except nonlinearity, cine mode is well matched to integrated mode response within 2% for field size, phantom thickness, MLC speed dependences. Conclusion: Cine mode has similar dosimetric characteristics to integrated mode with open and IMRT fields, and the main limitation with cine mode is missing images. Therefore, the calibration of EPID images with this mode should be run with large MU, and when IMRT verification field has low MU, the correction for missing images are required.

  11. The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

    Brehm, M.; Grydlik, M.; Groiss, H.; Hackl, F.; Schaeffler, F.; Fromherz, T.; Bauer, G.

    2011-01-01

    For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures T cap between 300 deg. C and 700 deg. C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of T cap in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At T cap = 300 deg. C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500 deg. C the WL becomes heavily alloyed during capping, and at 700 deg. C the islands also become alloyed. At T cap = 500 deg. C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at T cap 700 deg. C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above ≅6 ML, we found an unexpected thickening of the WL, almost independently of T cap . This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.

  12. Structural, elastic, electronic, bonding, and optical properties of BeAZ2 (A = Si, Ge, Sn; Z = P, As) chalcopyrites

    Fahad, Shah; Murtaza, G.; Ouahrani, T.; Khenata, R.; Yousaf, Masood; Omran, S.Bin; Mohammad, Saleh

    2015-01-01

    A first principles density functional theory (DFT) technique is used to study the structural, chemical bonding, electronic and optical properties of BeAZ 2 (A = Si, Ge, Sn; Z = P, As) chalcopyrite materials. The calculated parameters are in good agreement with the available experimental results. The lattice constants and the equilibrium volume increased as we moved from Si to Ge to Sn, whereas the c/a and internal parameters u decreased by shifting the cation from P to As. These compounds are elastically stable. An investigation of the band gap using the WC-GGA, EV-GGA, PBE-GGA and mBJ-metaGGA potentials suggested that BeSiP 2 and BeSiAs 2 are direct band gap compounds, whereas BeGeP 2, BeGeAs 2, BeSnP 2, BeSnAs 2 are indirect band gap compounds. The energy band gaps decreased by changing B from Si to Sn and increased by changing the anion C from P to As. The bonding among the cations and anions is primarily ionic. In the optical properties, the real and imaginary parts of the dielectric functions, reflectivity and optical conductivity have been studied over a wide energy range. - Highlights: • The compounds are studied by FP-LAPW method within mBJ approximation. • All of the studied materials show isotropic behaviour. • All the compounds show direct band gap nature. • Bonding nature is mostly covalent among the studied compounds. • High absorption peaks and reflectivity ensures there utility in optoelectronic devices

  13. UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

    Schutz-Kuchly T.

    2014-01-01

    Full Text Available Experimental work on laser induced ablation of thin Al2O3(20 nm/SiN:H (70 nm and a-Si:H (20 nm/SiN:H (70 nm stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration, however a-Si:H flakes and Al2O3 lace remain after ablation process.

  14. Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region

    Kacha, K.; Djeffal, F.; Ferhati, H.; Arar, D.; Meguellati, M.

    2015-01-01

    We present a new approach based on the multi-trench technique to improve the electrical performances, which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new multi-trench region in the intrinsic layer, in order to modulate the total resistance of the solar cell. Based on 2-D numerical investigation and optimization of amorphous SiGe double-junction (a-Si:H/a-SiGe:H) thin film solar cells, in the present paper numerical models of electrical and optical parameters are developed to explain the impact of the multi-trench technique on the improvement of the double-junction solar cell electrical behavior for high performance photovoltaic applications. In this context, electrical characteristics of the proposed design are analyzed and compared with conventional amorphous silicon double-junction thin-film solar cells. (paper)

  15. Theoretical modeling developed to evaluate the hardness and reduced modulus for the C/a-Si composite film using nanoindentation tests

    Han, C.-F.; Lin, J.-F.; Chung, C.-K.; Wu, B.-H.

    2008-01-01

    A general mechanical model, which is composed of the mechanical models employed to describe the contact behaviors and deformations arising in all layers (including the substrate), is successfully developed in the present study for multilayer specimens in order to evaluate the contact projected area by a theoretical model, and thus the hardness and reduced modulus, using nanoindentation tests. The governing differential equations for the depth solutions of the indenter tip formed at all layers of the specimen under their contact load are developed individually. The influence of the material properties of the substrate on a multilayer specimen's hardness and reduced modulus at various indentation depths can thus be evaluated. Transition and pop-in occurred at depths near, but still before, the C (top layer)/a-Si (buffer layer) interface and the a-Si/Si (substrate) interface, respectively. Using the present analysis, the depths corresponding to the transition and pop-in behaviors can be predicted effectively

  16. Ion-irradiation-induced damage in nuclear materials: Case study of a-SiO2 and MgO

    Bachiller-Perea, Diana

    2016-01-01

    One of the most important challenges in Physics today is the development of a clean, sustainable, and efficient energy source that can satisfy the needs of the actual and future society producing the minimum impact on the environment. For this purpose, a huge international research effort is being devoted to the study of new systems of energy production; in particular, Generation IV fission reactors and nuclear fusion reactors are being developed. The materials used in these reactors will be subjected to high levels of radiation, making necessary the study of their behavior under irradiation to achieve a successful development of these new technologies. In this thesis two materials have been studied: amorphous silica (a-SiO 2 ) and magnesium oxide (MgO). Both materials are insulating oxides with applications in the nuclear energy industry. High-energy ion irradiations have been carried out at different accelerator facilities to induce the irradiation damage in these two materials; then, the mechanisms of damage have been characterized using principally Ion Beam Analysis (IBA) techniques. One of the challenges of this thesis was to develop the Ion Beam Induced Luminescence or iono-luminescence (which is not a widely known IBA technique) and to apply it to the study of the mechanisms of irradiation damage in materials, proving the power of this technique. For this purpose, the iono-luminescence of three different types of silica (containing different amounts of OH groups) has been studied in detail and used to describe the creation and evolution of point defects under irradiation. In the case of MgO, the damage produced under 1.2 MeV Au + irradiation has been characterized using Rutherford backscattering spectrometry in channeling configuration and X-ray diffraction. Finally, the iono-luminescence of MgO under different irradiation conditions has also been studied.The results obtained in this thesis help to understand the irradiation-damage processes in materials

  17. The Quaternary calc-alkaline volcanism of the Patagonian Andes close to the Chile triple junction: geochemistry and petrogenesis of volcanic rocks from the Cay and Maca volcanoes (˜45°S, Chile)

    D'Orazio, M.; Innocenti, F.; Manetti, P.; Tamponi, M.; Tonarini, S.; González-Ferrán, O.; Lahsen, A.; Omarini, R.

    2003-08-01

    Major- and trace-element, Sr-Nd isotopes, and mineral chemistry data were obtained for a collection of volcanic rock samples erupted by the Cay and Maca Quaternary volcanoes, Patagonian Andes (˜45°S, Chile). Cay and Maca are two large, adjacent stratovolcanoes that rise from the Chiloe block at the southern end of the southern volcanic zone (SVZ) of the Andes. Samples from the two volcanoes are typical medium-K, calc-alkaline rocks that form two roughly continuous, largely overlapping series from subalkaline basalt to dacite. The overall geochemistry of the samples studied is very similar to that observed for most volcanoes from the southern SVZ. The narrow range of Sr-Nd isotope compositions ( 87Sr/ 86Sr=0.70389-0.70431 and 143Nd/ 144Nd=0.51277-0.51284) and the major- and trace-element distributions indicate that the Cay and Maca magmas differentiated by crystal fractionation without significant contribution by crustal contamination. This is in accordance with the thin (Maca magmas is investigated by means of the relative concentration of fluid mobile (e.g. Ba) and fluid immobile (e.g. Nb, Ta, Zr, Y) elements and other relevant trace-element ratios (e.g. Sr/Y). The results indicate that small amounts (Maca volcanoes and that, despite the very young age (Maca magma sources to the northern edge of the slab window generated by the subduction of the Chile ridge under the South American plate, we did not find any geochemical evidence for a contribution of a subslab asthenospheric mantle. However, this mantle has been used to explain the peculiar geochemical features (e.g. the mild alkalinity and relatively low ratios between large ion lithophile and high field strength elements) of the Hudson volcano, which is located even closer to the slab window than the Cay and Maca volcanoes are.

  18. Surface passivation by Al2O3 and a-SiNx: H films deposited on wet-chemically conditioned Si surfaces

    Bordihn, S.; Mertens, V.; Engelhart, P.; Kersten, K.; Mandoc, M.M.; Müller, J.W.; Kessels, W.M.M.

    2012-01-01

    The surface passivation of p- and n-type silicon by different chemically grown SiO2 films (prepared by HNO3, H2SO4/H2O2 and HCl/H2O2 treatments) was investigated after PECVD of a-SiNx:H and ALD of Al2O3 capping films. The wet chemically grown SiO2 films were compared to thermally grown SiO2 and the

  19. Evaluation of the annual electric energy output of an a-Si:H solar cellin various regions of the CIS countries

    Kryuchenko, Yu.V.; Sachenko, A.V.; Bobyl, A.V.; Kostylyov, V.P.; Sokolovskyi, I.O.; Terukov, E.I.; Tokmoldin, N.; Tokmoldin, S. Zh.; Smirnov, A.V.

    2014-01-01

    We have calculated annual (i.e., for each day of the year) daytime dependences of the electric power output per unit area of an a-Si:H solar cell (SC) at latitudes 45°N, 50°N, 55°N, 60°N and at certain geographical points of Russia, Kazakhstan, Ukraine and Belarus. The calculations were based on a rigorous theoretical model, which allows to determine photoconversion efficiency, optimal electric power output and other photovoltaic electrical characteristics at arbitrary angles of solar irradiance incidence on an a-Si:H-based SC. Parameters of the a-Si:H SC under consideration provide photoconversion efficiency of 10% at 12:00 noon on equinox day at the 45°N latitude despite small total thickness of 0.7 µm of the a-Si:H SC structure up to the rear contact. Normalization of the obtained results by maximal values enables one to infer respective time dependencies for other types of SCs. In combination with the data on average numbers of sunny days per year (or average annual sunshine hours) for certain geographical regions, this provides a way for understanding the feasibility of solar electricity generation in these regions. Based on this study, we identify regions of Russia, Kazakhstan and Ukraine, for which electricity generation exceeds the average values by over 30%. - Highlights: • We model solar power generation from an amorphous silicon solar cell at moderate latitudes from 45°N to 60°N. • We model solar power generation from an amorphous silicon solar cell as applied to Belarus, Kazakhstan, Russia and Ukraine. • The calculations are based on our rigorous model taking into account atmospheric conditions at a given location. • Annual time-dependency of power output and optimal values of solar energy generated at the various locations are determined

  20. Forming-free performance of a-SiN x :H-based resistive switching memory obtained by oxygen plasma treatment

    Zhang, Xinxin; Ma, Zhongyuan; Zhang, Hui; Liu, Jian; Yang, Huafeng; Sun, Yang; Tan, Dinwen; Li, Wei; Xu, Ling; Chen, Kuiji; Feng, Duan

    2018-06-01

    An a-SiN x -based resistive random access memory (RRAM) device with a forming-free characteristic has significant potentials for the industrialization of the next-generation memories. We demonstrate that a forming-free a-SiN x O y RRAM device can be achieved by an oxygen plasma treatment of ultra-thin a-SiN x :H films. Electron spin resonance spectroscopy reveals that Si dangling bonds with a high density (1019 cm‑3) are distributed in the initial state, which exist in the forms of Si2N≡Si·, SiO2≡Si·, O3≡Si·, and N3≡Si·. X-ray photoelectron spectroscopy and temperature-dependent current analyses reveal that the silicon dangling bonds induced by the oxygen plasma treatment and external electric field contribute to the low resistance state (LRS). For the high resistance state (HRS), the rupture of the silicon dangling bond pathway is attributed to the partial passivation of Si dangling bonds by H+ and O2‑. Both LRS and HRS transmissions obey the hopping conduction model. The proposed oxygen plasma treatment, introduced to generate a high density of Si dangling bonds in the SiN x O y :H films, provides a new approach to forming-free RRAM devices.

  1. Effect of doping on structural, optical and electrical properties of nanostructure ZnO films deposited onto a-Si:H/Si heterojunction

    Sali, S.; Boumaour, M.; Kermadi, S.; Keffous, A.; Kechouane, M.

    2012-09-01

    We investigated the structural; optical and electrical properties of ZnO thin films as the n-type semiconductor for silicon a-Si:H/Si heterojunction photodiodes. The ZnO film forms the front contact of the super-strata solar cell and has to exhibit good electrical (high conductivity) and optical (high transmittance) properties. In this paper we focused our attention on the influence of doping on device performance. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along c-axis. SEM images show that all films display a granular, polycrystalline morphology and the ZnO:Al exhibits a better grain uniformity. The transmittance of the doped films was found to be higher when compared to undoped ZnO. A low resistivity of the order of 2.8 × 10-4 Ω cm is obtained for ZnO:Al using 0.4 M concentration of zinc acetate. The photoluminescence (PL) spectra exhibit a blue band with two peaks centered at 442 nm (2.80 eV) and 490 nm (2.53 eV). It is noted that after doping the ZnO films a shift of the band by 22 nm (0.15 eV) is recorded and a high luminescence occurs when using Al as a dopant. Dark I-V curves of ZnO/a-Si:H/Si structure showed large difference, which means there is a kind of barrier to current flow between ZnO and a-Si:H layer. Doping films was applied and the turn-on voltages are around 0.6 V. Under reverse bias, the current of the ZnO/a-Si:H/Si heterojunction is larger than that of ZnO:Al/a-Si:H/Si. The improvement with ZnO:Al is attributed to a higher number of generated carriers in the nanostructure (due to the higher transmittance and a higher luminescence) that increases the probability of collisions.

  2. Study of the hydrogen behavior in amorphous hydrogenated materials of type a - C:H and a - SiC:H facing fusion reactor plasma; Etude du comportament de l`hydrogene dans des materiaux amorphes hydrogenes de type a - C:H et a - SiC:H devant faire face au plasma des reacteurs a fusion

    Barbier, G. [Lyon-1 Univ., 69 - Villeurbanne (France). Inst. de Physique Nucleaire

    1997-04-10

    Plasma facing components of controlled fusion test devices (tokamaks) are submitted to several constraints (irradiation, high temperatures). The erosion (physical sputtering and chemical erosion) and the hydrogen recycling (retention and desorption) of these materials influence many plasma parameters and thus affect drastically the tokamak running. First, we will describe the different plasma-material interactions. It will be pointed out, how erosion and hydrogen recycling are strongly related to both chemical and physical properties of the material. In order to reduce these interactions, we have selected two amorphous hydrogenated materials (a-C:H and a-SiC:H), which are known for their good thermal and chemical qualities. Some samples have been then implanted with lithium ions at different fluences. Our materials have been then irradiated with deuterium ions at low energy. From our results, it is shown that both the lithium implantation and the use of an a - SiC:H substrate can be beneficial in enhancing the hydrogen retention. These results were completed with thermal desorption studies of these materials. It was evidenced that the hydrogen fixation was more efficient in a-SiC:H than in a-C:H substrate. Results in good agreement with those described above have been obtained by exposing a - C:H and a - SiC:H samples to the scrape off layer of the tokamak of Varennes (TdeV, Canada). A modelling of hydrogen diffusion under irradiation has been also proposed. (author) 176 refs.

  3. Microcalcification detectability using a bench-top prototype photon-counting breast CT based on a Si strip detector.

    Cho, Hyo-Min; Ding, Huanjun; Barber, William C; Iwanczyk, Jan S; Molloi, Sabee

    2015-07-01

    than 0.89 ± 0.07 for μCas larger than 120 μm in diameter at a MGD of 3 mGy. The experimental results using a 1.6 cm diameter breast phantom showed that the prototype system can achieve an average AUC greater than 0.98 ± 0.01 for μCas larger than 140 μm in diameter using an entrance exposure of 1.2 mGy. The proposed photon-counting breast CT system based on a Si strip detector can potentially offer superior image quality to detect μCa with a lower dose level than a standard two-view mammography.

  4. Performance Study of an aSi Flat Panel Detector for Fast Neutron Imaging of Nuclear Waste

    Schumann, M.; Mauerhofer, E. [Institute of Energy and Climate Research - Nuclear Waste Management and Reactor Safety, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Engels, R.; Kemmerling, G. [Central Institute for Engineering, Electronics and Analytics - Electronic Systems, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Frank, M. [MATHCCES - Department of Mathematics, RWTH Aachen University, 52062 Aachen (Germany); Havenith, A.; Kettler, J.; Klapdor-Kleingrothaus, T. [Institute of Nuclear Engineering and Technology Transfer, RWTH Aachen University, 52062 Aachen (Germany); Schitthelm, O. [Corporate Technology, Siemens AG, 91058 Erlangen (Germany)

    2015-07-01

    Radioactive waste must be characterized to check its conformance for intermediate storage and final disposal according to national regulations. For the determination of radio-toxic and chemo-toxic contents of radioactive waste packages non-destructive analytical techniques are preferentially used. Fast neutron imaging is a promising technique to assay large and dense items providing, in complementarity to photon imaging, additional information on the presence of structures in radioactive waste packages. Therefore the feasibility of a compact Neutron Imaging System for Radioactive waste Analysis (NISRA) using 14 MeV neutrons is studied in a cooperation framework of Forschungszentrum Juelich GmbH, RWTH Aachen University and Siemens AG. However due to the low neutron emission of neutron generators in comparison to research reactors the challenging task resides in the development of an imaging detector with a high efficiency, a low sensitivity to gamma radiation and a resolution sufficient for the purpose. The setup is composed of a commercial D-T neutron generator (Genie16GT, Sodern) with a surrounding shielding made of polyethylene, which acts as a collimator and an amorphous silicon flat panel detector (aSi, 40 x 40 cm{sup 2}, XRD-1642, Perkin Elmer). Neutron detection is achieved using a general propose plastic scintillator (EJ-260, Eljen Technology) linked to the detector. The thermal noise of the photodiodes is reduced by employing an entrance window made of aluminium. Optimal gain and integration time for data acquisition are set by measuring the response of the detector to the radiation of a 500 MBq {sup 241}Am-source. Detector performance was studied by recording neutron radiography images of materials with various, but well known, chemical compositions, densities and dimensions (Al, C, Fe, Pb, W, concrete, polyethylene, 5 x 8 x 10 cm{sup 3}). To simulate gamma-ray emitting waste radiographs in presence of a gamma-ray sources ({sup 60}Co, {sup 137}Cs, {sup 241

  5. Research and development of photovoltaic power system. Study on growth mechanism of a-Si:H and preparation of the stable, high quality films; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon no seimaku kiko to kohinshitsuka

    Hirose, M [Hiroshima University, Hiroshima (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on a film forming mechanism for amorphous silicon for solar cells and its quality improvement. In in-situ observation on plasma CVD surface reaction by using the total reflection infrared absorbing spectroscopy, an observation on a real time basis was performed on the reaction process of an a-Si:H surface in contact with gas mixture plasma composed of SiH4 + CH4. In microscopic observation on initial processes of amorphous silicon growth, surface morphological change before and after a-Si:H deposition at 200{degree}C was observed by using an inter-atomic force microscope. The observation verified that a-Si:H has grown to an atomic layer. In research on defect density in a-Si:H fabricated under high-speed film forming conditions, analysis was made on correlation between the film forming speed at 250{degree}C and defect density in the film. Other research works include those on a high-quality a-SiGe:H film fabricated by using the nanometer film forming/hydrogen plasma annealing method, modulated doping into multi-layer films of a-Si:H/a-Ge:H, and thin film transistor using very thin multi layer films of a-Si:H/a-Ge:H. 5 refs., 12 figs.

  6. a-Si{sub x}C{sub 1−x}:H thin films with subnanometer surface roughness for biological applications

    Herrera-Celis, José, E-mail: jlhc@inaoep.mx; Reyes-Betanzo, Claudia, E-mail: creyes@inaoep.mx; Itzmoyotl-Toxqui, Adrián, E-mail: aitzmo@inaoep.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, Luis Enrique Erro #1, Santa María Tonantzintla, San Andrés Cholula 72840, Puebla (Mexico); Orduña-Díaz, Abdu, E-mail: abdueve@hotmail.com; Pérez-Coyotl, Ana, E-mail: anapcoyotl@hotmail.com [Centro de Investigación en Biotecnología Aplicada del IPN, Ex-Hacienda San Juan Molino Carretera Estatal Tecuexcomac-Tepetitla Km 1.5, Tepetitla 90700, Tlaxcala (Mexico)

    2015-09-15

    The characterization of a-Si{sub x}C{sub 1−x}:H thin films by plasma-enhanced chemical vapor deposition with high hydrogen dilution for biological applications is addressed. A root mean square roughness less than 1 nm was measured via atomic force microscopy for an area of 25 μm{sup 2}. Structural analysis was done using Fourier transform infrared spectroscopy in the middle infrared region. It was found that under the deposition conditions, the formation of Si–C bonds is promoted. Electrical dark conductivity measurements were performed to evaluate the effect of high hydrogen dilution and to find the relation between carrier transport properties and the structural arrangement. Conductivities of the order of 10{sup −7} to 10{sup −9} S/cm at room temperature for methane–silane gas flow ratio from 0.35 to 0.85 were achieved, respectively. UV-visible spectra were used to obtain the optical band gap and the Tauc parameter. Optical band gap as wide as 3.55 eV was achieved in the regime of high carbon incorporation. Accordingly, deposition under low power density and high hydrogen dilution reduces the roughness, improves the structure of the network, and stabilizes the film properties as a greater percentage of carbon is incorporated. The biofunctionalization of a-Si{sub x}C{sub 1−x}:H surfaces with NH{sub 2}-terminated self-assembled monolayers was obtained through silanization with 3-aminopropyltrimethoxysilane. This knowledge opens a window for the inclusion of these a-Si{sub x}C{sub 1−x}:H thin films in devices such as biosensors.

  7. Hydrogen loss and its improved retention in hydrogen plasma treated a-SiNx:H films: ERDA study with 100 MeV Ag7+ ions

    Bommali, R. K.; Ghosh, S.; Khan, S. A.; Srivastava, P.

    2018-05-01

    Hydrogen loss from a-SiNx:H films under irradiation with 100 MeV Ag7+ ions using elastic recoil detection analysis (ERDA) experiment is reported. The results are explained under the basic assumptions of the molecular recombination model. The ERDA hydrogen concentration profiles are composed of two distinct hydrogen desorption processes, limited by rapid molecular diffusion in the initial stages of irradiation, and as the fluence progresses a slow process limited by diffusion of atomic hydrogen takes over. Which of the aforesaid processes dominates, is determined by the continuously evolving Hydrogen concentration within the films. The first process dominates when the H content is high, and as the H concentration falls below a certain threshold (Hcritical) the irradiation generated H radicals have to diffuse through larger distances before recombining to form H2, thereby significantly bringing down the hydrogen evolution rate. The ERDA measurements were also carried out for films treated with low temperature (300 °C) hydrogen plasma annealing (HPA). The HPA treated films show a clear increase in Hcritical value, thus indicating an improved diffusion of atomic hydrogen, resulting from healing of weak bonds and passivation of dangling bonds. Further, upon HPA films show a significantly higher H concentration relative to the as-deposited films, at advanced fluences. These results indicate the potential of HPA towards improved H retention in a-SiNx:H films. The study distinguishes clearly the presence of two diffusion processes in a-SiNx:H whose diffusion rates differ by an order of magnitude, with atomic hydrogen not being able to diffuse further beyond ∼ 1 nm from the point of its creation.

  8. Simulation of light-induced degradation of μc-Si in a-Si/μc-Si tandem solar cells by the diode equivalent circuit

    Weicht, J. A.; Hamelmann, F. U.; Behrens, G.

    2016-02-01

    Silicon-based thin film tandem solar cells consist of one amorphous (a-Si) and one microcrystalline (μc-Si) silicon solar cell. The Staebler - Wronski effect describes the light- induced degradation and temperature-dependent healing of defects of silicon-based solar thin film cells. The solar cell degradation depends strongly on operation temperature. Until now, only the light-induced degradation (LID) of the amorphous layer was examined in a-Si/μc-Si solar cells. The LID is also observed in pc-Si single function solar cells. In our work we show the influence of the light-induced degradation of the μc-Si layer on the diode equivalent circuit. The current-voltage-curves (I-V-curves) for the initial state of a-Si/pc-Si modules are measured. Afterwards the cells are degraded under controlled conditions at constant temperature and constant irradiation. At fixed times the modules are measured at standard test conditions (STC) (AM1.5, 25°C cell temperature, 1000 W/m2) for controlling the status of LID. After the degradation the modules are annealed at dark conditions for several hours at 120°C. After the annealing the dangling bonds in the amorphous layer are healed, while the degradation of the pc-Si is still present, because the healing of defects in pc-Si solar cells needs longer time or higher temperatures. The solar cells are measured again at STC. With this laboratory measured I-V-curves we are able to separate the values of the diode model: series Rs and parallel resistance Rp, saturation current Is and diode factor n.

  9. Evidence of significant down-conversion in a Si-based solar cell using CuInS2/ZnS core shell quantum dots

    Gardelis, Spiros; Nassiopoulou, Androula G.

    2014-05-01

    We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS2/ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion.

  10. On the way to enhance the optical absorption of a-Si in NIR by embedding Mg_2Si thin film

    Chernev, I. M.; Shevlyagin, A. V.; Galkin, K. N.; Stuchlik, J.; Remes, Z.; Fajgar, R.; Galkin, N. G.

    2016-01-01

    Mg_2Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg_2Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg_2Si.

  11. On the way to enhance the optical absorption of a-Si in NIR by embedding Mg{sub 2}Si thin film

    Chernev, I. M., E-mail: igor-chernev7@mail.ru; Shevlyagin, A. V.; Galkin, K. N. [Institute of Automation and Control Processes of FEB RAS, Radio St. 5, 690041 Vladivostok (Russian Federation); Stuchlik, J. [Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6 (Czech Republic); Remes, Z. [Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6 (Czech Republic); FBE CTU, Nam. Sitna 3105, 272 01 Kladno (Czech Republic); Fajgar, R. [Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojová 135, 165 02 Praha 6 (Czech Republic); Galkin, N. G. [Institute of Automation and Control Processes of FEB RAS, Radio St. 5, 690041 Vladivostok (Russian Federation); Far Eastern Federal University, School of Natural Sciences, Sukhanova St. 8, 690950 Vladivostok (Russian Federation)

    2016-07-25

    Mg{sub 2}Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg{sub 2}Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg{sub 2}Si.

  12. Evidence of significant down-conversion in a Si-based solar cell using CuInS2/ZnS core shell quantum dots

    Gardelis, Spiros; Nassiopoulou, Androula G.

    2014-01-01

    We report on the increase of up to 37.5% in conversion efficiency of a Si-based solar cell after deposition of light-emitting Cd-free, CuInS 2 /ZnS core shell quantum dots on the active area of the cell due to the combined effect of down-conversion and the anti- reflecting property of the dots. We clearly distinguished the effect of down-conversion from anti-reflection and estimated an enhancement of up to 10.5% in the conversion efficiency due to down-conversion

  13. Optoelectrical modeling of solar cells based on c-Si/a-Si:H nanowire array: focus on the electrical transport in between the nanowires

    Levtchenko, Alexandra; Le Gall, Sylvain; Lachaume, Raphaël; Michallon, Jérôme; Collin, Stéphane; Alvarez, José; Djebbour, Zakaria; Kleider, Jean-Paul

    2018-06-01

    By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous silicon (a-Si:H) shell. By varying either the doping concentration of the c-Si core, or back contact work function we can separate and highlight the contribution to the cell’s performance of the nanowires themselves (the radial cell) from the interspace between the nanowires (the planar cell). We show that the build-in potential (V bi) in the radial and planar cells strongly depends on the doping of c-Si core and the work function of the back contact respectively. Consequently, the solar cell’s performance is degraded if either the doping concentration of the c-Si core, or/and the work function of the back contact is too low. By inserting a thin (p) a-Si:H layer between both core/absorber and back contact/absorber, the performance of the solar cell can be improved by partly fixing the V bi at both interfaces due to strong electrostatic screening effect. Depositing such a buffer layer playing the role of an electrostatic screen for charge carriers is a suggested way of enhancing the performance of solar cells based on radial p-i-n or n-i-p nanowire array.

  14. Electrical properties correlated with redistributed deep states in a-Si:H thin-film transistors on flexible substrates undergoing mechanical bending

    Lee, M.H.; Hsieh, B.-F.; Chang, S.T.

    2013-01-01

    The formation of trapped states due to mechanical strain dominates the characteristics of a-Si:H thin-film transistors. The behavior of electrical characteristics affected by mechanical strain can be explained by the redistribution of trap states in the bandgap. The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics, such as threshold voltage, subthreshold swing, and the mobility of carriers. During a mechanical strain, the deep states are redistributed into a Gaussian distribution and are dissimilar to ordinary acceptor-like deep states, which have exponential distributions. It is concluded that the gap state density of an a-Si:H layer under the effects of mechanical strain is fundamental to the reliability and development of flexible electronics. - Highlights: ► The trap formation by mechanical strain dominates the characteristics. ► Weak or broken bonds may contribute to the redistribution of trap states. ► The deep states are redistributed into a Gaussian distribution

  15. Enhancement of carrier mobility in MoS{sub 2} field effect transistors by a SiO{sub 2} protective layer

    Shao, Peng-Zhi; Zhao, Hai-Ming; Cao, Hui-Wen; Wang, Xue-Feng; Pang, Yu; Li, Yu-Xing; Deng, Ning-Qin; Yang, Yi; Ren, Tian-Ling, E-mail: RenTL@tsinghua.edu.cn, E-mail: zhangsh@sz.tsinghua.edu.cn [Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084 (China); Zhang, Jing [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Zhang, Guang-Yu [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); CollaborativeInnovation Center of Quantum Matter, Beijing 100190 (China); Zhang, Sheng, E-mail: RenTL@tsinghua.edu.cn, E-mail: zhangsh@sz.tsinghua.edu.cn [Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084 (China); The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050 (China); Advanced Sensor and Integrated System Lab, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China)

    2016-05-16

    Molybdenum disulfide is a promising channel material for field effect transistors (FETs). In this paper, monolayer MoS{sub 2} grown by chemical vapor deposition (CVD) was used to fabricate top-gate FETs through standard optical lithography. During the fabrication process, charged impurities and interface states are introduced, and the photoresist is not removed cleanly, which both limit the carrier mobility and the source-drain current. We apply a SiO{sub 2} protective layer, which is deposited on the surface of MoS{sub 2}, in order to avoid the MoS{sub 2} directly contacting with the photoresist and the ambient environment. Therefore, the contact property between the MoS{sub 2} and the electrodes is improved, and the Coulomb scattering caused by the charged impurities and the interface states is reduced. Comparing MoS{sub 2} FETs with and without a SiO{sub 2} protective layer, the SiO{sub 2} protective layer is found to enhance the characteristics of the MoS{sub 2} FETs, including transfer and output characteristics. A high mobility of ∼42.3 cm{sup 2}/V s is achieved, which is very large among the top-gate CVD-grown monolayer MoS{sub 2} FETs.

  16. Preliminary evaluation of a prototype stereoscopic a-Si:H-based X-ray imaging system for full-field digital mammography

    Darambara, D.G.; Speller, R.D.; Horrocks, J.A.; Godber, S.; Wilson, R.; Hanby, A.

    2001-01-01

    In a pre-clinical study, we have been investigating the potential of a-Si:H active matrix, flat panel imagers for X-ray full-field digital mammography through the development of an advanced 3D X-ray imaging system and have measured a number of their important imaging characteristics. To enhance the information embodied into the digital images produced by the a-Si array, stereoscopic images, created by viewing the object under examination from two angles and recombining the images, were obtained. This method provided us with a full 3D X-ray image of the test object as well as left and right perspective 2D images all at the same time. Within this scope, images of fresh, small human breast tissue specimens--normal and diseased--were obtained at ±2 deg., processed and stereoscopically displayed for a pre-clinical evaluation by radiologists. It was demonstrated that the stereoscopic presentation of the images provides important additional information and has potential benefits over the more traditional 2D data

  17. Effects of boron addition on a-Si90Ge10:H films obtained by low frequency plasma enhanced chemical vapour deposition

    Perez, Arllene M; Renero, Francisco J; Zuniga, Carlos; Torres, Alfonso; Santiago, Cesar

    2005-01-01

    Optical, structural and electric properties of (a-(Si 90 Ge 10 ) 1-y B y :H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10 -3 to 10 1 Ω -1 cm -1 when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV

  18. Model-independent determination of the strain distribution for a SiGe/Si superlattice using X-ray diffractometry data

    Nikulin, A.Y.; Stevenson, A.W.; Hashizume, H.

    1996-01-01

    The strain distribution in a Si 0.9 Ge 0.l/Si superlattice is determined from x-ray diffractometry data with a 25 Angstroms depth resolution. A logarithmic dispersion relation is used to determine the phase of the structure factor with information available a priori on the sample structure. Phase information is obtained from the observed reflection intensity via a logarithmic Hilbert transform and the a priori information is used to select the zeros to be included in the solution. The reconstructed lattice strain profile clearly resolves SiGe and Si layers of 90 - 160 Angstroms thickness alternately stacked on a silicon substrate. The SiGe layer is found to have a lattice spacing in the surface-normal direction significantly smaller than predicted by Vegard's law. The result is supported by very good agreement of the simulated rocking curve profile with the observation. 18 refs., 1 tab., 5 figs

  19. Study of the refractive index change in a-Si:H thin films patterned by 532 nm laser radiation for photovoltaic applications

    Colina, M., E-mail: monica.colina.brito@upm.e [Centro Laser UPM, Univ. Politecnica de Madrid, Ctra. de Valencia Km 7.3, 28031 Madrid (Spain); Molpeceres, C.; Holgado, M. [Centro Laser UPM, Univ. Politecnica de Madrid, Ctra. de Valencia Km 7.3, 28031 Madrid (Spain); Gandia, J. [Dept. de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda, Complutense 22, 28040 Madrid (Spain); Nos, O. [CeRMAE Dept. Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona (Spain); Ocana, J.L. [Centro Laser UPM, Univ. Politecnica de Madrid, Ctra. de Valencia Km 7.3, 28031 Madrid (Spain)

    2010-07-01

    Laser scribing of hydrogenated amorphous silicon (a-Si:H) is a crucial step in the fabrication of thin film photovoltaic modules. During such process, inherent thermo-mechanical effects associated to laser ablation mechanisms lead to thermal damages. In that sense, the state of the material remaining in the vicinity of the ablated area has a critical influence on the electrical properties of the final devices. In this work, a comprehensive analysis of refractive index variations for the material surrounding the ablated area by means of Infrared-Visible Fourier transform spectrometry is proposed. Besides, in order to evaluate the material microstructure, Raman spectroscopy is employed as a complimentary technique. It was seen that the refractive index variation decreased as the distance from the center of the ablated groove was increased. Likewise, a clear transition from highly crystalline to amorphous material could be also observed as a function of the distance from the groove.

  20. Study of the refractive index change in a-Si:H thin films patterned by 532 nm laser radiation for photovoltaic applications

    Colina, M.; Molpeceres, C.; Holgado, M.; Gandia, J.; Nos, O.; Ocana, J.L.

    2010-01-01

    Laser scribing of hydrogenated amorphous silicon (a-Si:H) is a crucial step in the fabrication of thin film photovoltaic modules. During such process, inherent thermo-mechanical effects associated to laser ablation mechanisms lead to thermal damages. In that sense, the state of the material remaining in the vicinity of the ablated area has a critical influence on the electrical properties of the final devices. In this work, a comprehensive analysis of refractive index variations for the material surrounding the ablated area by means of Infrared-Visible Fourier transform spectrometry is proposed. Besides, in order to evaluate the material microstructure, Raman spectroscopy is employed as a complimentary technique. It was seen that the refractive index variation decreased as the distance from the center of the ablated groove was increased. Likewise, a clear transition from highly crystalline to amorphous material could be also observed as a function of the distance from the groove.

  1. In Situ X-Ray Diffraction Study on Surface Melting of Bi Nanoparticles Embedded in a SiO2 Matrix

    Chen Xiao-Ming; Huo Kai-Tuo; Liu Peng

    2014-01-01

    Bi nanoparticles embedded in a SiO 2 matrix were prepared via the high energy ball milling method. The melting behavior of Bi nanoparticles was studied by means of differential scanning calorimetry (DSC) and high-temperature in situ X-ray diffraction (XRD). DSC cannot distinguish the surface melting from ‘bulk’ melting of the Bi nanoparticles. The XRD intensity of the Bi nanoparticles decreases progressively during the in situ heating process. The variation in the normalized integrated XRD intensity versus temperature is related to the average grain size of Bi nanoparticles. Considering the effects of temperature on Debye—Waller factor and Lorentz-polarization factor, we discuss the XRD results in accordance with surface melting. Our results show that the in situ XRD technique is effective to explore the surface melting of nanoparticles

  2. The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Graphite Target Case.

    Lusitra Munisa

    2003-04-01

    Full Text Available A study of the annealing effect on optical properties and disorder of hydrogenated amorphous silicon carbon (a-SiC:H films was undertaken. The films were prepared by sputtering technique using graphite target and silicon wafer in argon and hydrogen gas mixture, and then characterized by uv-vis (ultra violet-visible spectroscopy before and after annealing. Index of refraction n and absorption coefficient α of films have been determined from measurements of transmittance. The optical gap show small variation with annealing temperature, increasing with increasing annealing temperature up to 500 °C. An increase of annealing temperature leads to reduced film density and the amorphous network disorder. The experimental results are discussed in terms of deposition condition and compared to other experimental results.

  3. Detection of the scintillation light emitted from direct-bandgap compound semiconductors by a Si avalanche photodiode at 150 mK

    Yasumune, Takashi; Takayama, Nobuyasu; Maehata, Keisuke; Ishibashi, Kenji; Umeno, Takahiro

    2008-01-01

    In this work, the direct-bandgap compound semiconductor materials are irradiated by α particles emitted from 241 Am for the detection of scintillation light at the temperature of 150 mK. For the irradiation experiment, two disk shaped samples were fabricated from an epoxy resin mixed with the powder of PbI 2 and CuI, respectively. Each disk-samples was cooled down to 150 mK by a compact liquid helium-free dilution refrigerator. A Si avalanche photodiode (APD) was employed for detecting the scintillation light emitted from the disk-sample inside the refrigerator. The detection signal current of Si APD was converted into the voltage pulses by a charge sensitive preamplifier. The voltage pulses of the scintillation light emitted from the direct-bandgap semiconductors were observed at the temperature of 150 mK. (author)

  4. Structural, optical, and hydrogenation properties of ZnO nanowall networks grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy

    Su, S.C.; Lu, Y.M.; Zhang, Z.Z.; Li, B.H.; Shen, D.Z.; Yao, B.; Zhang, J.Y.; Zhao, D.X.; Fan, X.W.

    2008-01-01

    ZnO nanowall networks were grown on a Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (P-MBE) without using catalysts. Scanning electronic microscopy (FE-SEM) confirmed the formation of nanowalls with a thickness of about 10-20 nm. X-ray diffraction (XRD) showed that the ZnO nanowall networks were crystallized in a wurtzite structure with their height parallel to the direction. Photoluminescence (PL) of the ZnO nanowall networks exhibited free excitons (FEs), donor-bound exciton (D 0 X), donor-acceptor pair (DAP), and free exciton to acceptor (FA) emissions. The growth mechanism of the ZnO nanowall networks was discussed, and their hydrogenation was also studied

  5. Enhancing Color Purity and Stable Efficiency of White Organic Light Diodes by Using Hole-Blocking Layer

    Chien-Jung Huang

    2014-01-01

    Full Text Available The organic light-emitting diodes with triple hole-blocking layer (THBL formation sandwich structure which generate white emission were fabricated. The 5,6,11,12-tetraphenylnapthacene (Rubrene, (4,4′-N,N′-dicarbazolebiphenyl (CBP, and 4,4′-bis(2,2′diphenylvinil-1,1′-biphenyl (DPVBi were used as emitting materials in the device. The function of CBP layer is not only an emitting layer but also a hole-blocking layer (HBL, and the Rubrene was doped into the CBP. The optimal configuration structure was indium tin oxide (ITO/Molybdenum trioxide (MoO3 (5 nm/[4,4-bis[N-(1-naphthyl-N-phenylamino]biphenyl (NPB (35 nm/CBP (HBL1 (5 nm/DPVBi (I (10 nm/CBP (HBL2 : Rubrene (4 : 1 (3 nm/DPVBi (II (30 nm/CBP (HBL3 (2 nm/4,7-diphenyl-1,10-phenanthroline (BPhen (10 nm/Lithium fluoride (LiF/aluminum (Al. The result showed that the device with Rubrene doped in CBP (HBL2 exhibited a stable white emission with the color coordinates of (0.322, 0.368, and the coordinate with the slight shift of ±Δx,y = (0.001, 0.011 for applied voltage of 8–12 V was observed.

  6. Electrically modulated lateral photovoltage in μc-SiOx:H/a-Si:H/c-Si p-i-n structure at low temperatures

    Liu, Jihong; Qiao, Shuang, E-mail: sqiao@hbu.edu.cn; Wang, Jianglong; Wang, Shufang, E-mail: sfwang@hbu.edu.cn; Fu, Guangsheng

    2017-04-15

    Graphical abstract: In this paper, the temperature dependence of the LPE has been experimentally studied under illumination of different lasers ranging from visible to infrared for the μc-SiOx:H/a-Si:H/c-Si p-i-n structure. It was found that the position sensitivity increases nearly linearly with wavelength from 405 nm to 980 nm in the whole temperature range, and the saturated position sensitivity decreased quickly from 32.4 mV/mm to a very low value of 1.26 mV/mm and the nonlinearity improved from 7.01% to 3.54% with temperature decreasing from 296 K to 80 K for 532 nm laser illumination. By comparing the experiment results of μc-SiOx:H/a-Si:H/c-Si and ITO/c-Si, it is suggest that the position sensitivity was mainly determined by the temperature-dependent SB and the nonlinearity was directly related to the decreased resistivity of conductive layer. When an external bias voltage was applied, the LPE improved greatly and the position sensitivity of 361.35 mV/mm under illumination of 80 mW at 80 K is 286.7 times as large as that without biased voltage. More importantly, both the position sensitivity and the nonlinearity were independent of temperature again, which can be ascribed to the large constant transmission probability and diffusion length induced by the greatly increased SB. Our research provides an essential insight on the bias voltage-modulated LPE at different temperatures, and this temperature-independent greatly improved LPE is thought to be very useful for developing novel photoelectric devices. - Highlights: • The LPE is proportional to the laser wavelength in the whole temperature range. • The LPE decreases gradually with decreasing temperature from 296 K to 80 K. • Nonlinearity of the LPV curve improves a little with decreasing temperature. • The LPE improves dramatically and is independent of temperature with the aid of a bias voltage. - Abstract: The lateral photovoltaic effect (LPE) in μc-SiOx:H/a-Si:H/c-Si p-i-n structure is studied

  7. Excitation and deexcitation of the Si-H stretching mode in a Si:H with picosecond free electron laser pulses

    Xu, Z.; Fauchet, M.; Rella, C.W.

    1995-01-01

    Hydrogen in amorphous and crystalline silicon has been the topic of intense theoretical and experimental investigations for more than one decade. To better understand how the Si-H bonds interact with the Si matrix and how they can be broken, it would be useful to excite selectively these bonds and monitor the energy flow from the Si-H bonds into the bulk Si modes. One attractive way of exciting the Si-H modes selectively is with an infrared laser tuned to a Si-H vibrational mode. Unfortunately, up to now, this type of experiment had not been possible because of the lack of a laser producing intense, ultrashort pulses that are tunable in the mid infrared. In this presentation, we report the first measurement where a 1 picosecond long laser pulse was used to excite the Si-H stretching modes near 2000 cm -1 and another identical laser pulse was used to measure the deexcitation from that specific vibrational mode. The laser was the Stanford free electron laser generating ∼1 ps-long pulses, tunable in the 5 μm region and focussed to an intensity of ∼1 GW/cm 2 . The pump-probe measurements were performed in transmission at room temperature on several 2 μm thick a-Si:H films deposited on c-Si. Samples with predominant Si-H 1 modes, predominant Si-H n>1 modes and with a mixture of modes were prepared. The laser was tuned on resonance with either of these modes. Immediately after excitation, we observe a bleaching of the infrared absorption, which can be attributed to excitation of the Si-H mode. Beaching is expected since, as a result of anharmonicity, the detuning between the (E 3 - E 2 ) resonance and the (E 2 - E 1 ) resonance is larger than the laser bandwidth. Note that despite the anharmonicity, it should be possible to climb the vibrational ladder due to power broadening

  8. a-Si:H/μc-Si:H solar cells prepared by the single-chamber processes—minimization of phosphorus and boron cross contamination

    Merdzhanova, Tsvetelina, E-mail: t.merdzhanova@fz-juelich.de; Zimmermann, Thomas; Zastrow, Uwe; Gordijn, Aad; Beyer, Wolfhard

    2013-07-01

    Single-chamber processes for the deposition of high efficiency thin-film silicon tandem cells of an a-Si:H p-i-n (top cell)/μc-Si:H p-i-n (bottom cell) structure involving short fabrication time are reported. An industry relevant reactor and an excitation frequency of 13.56 MHz were used. The conversion efficiency is found to be highly sensitive to dopant cross contamination into the μc-Si:H i-layer of the bottom cell and within the n/p-interface of the tunnel recombination junction (TRJ). Different reactor treatments at the p/i-interfaces of the top and bottom cells and at the n/p-interface of the TRJ were applied, aiming to prevent dopant cross contamination. The phosphorus and the boron concentrations were evaluated by secondary ion mass spectrometry measurements. Phosphorus cross contamination after TRJ n-layer deposition is found to result in significant n-type doping of the μc-Si:H i-layer of the bottom cell if no reactor treatment is applied. In situ reactor treatment via an Ar flush and pumping step of 15 min applied at the n/p-interface of TRJ results in reduction of the μc-Si:H i-layer phosphorus concentration to values below 10{sup 17} cm{sup −3}. A conversion efficiency of 11.8% for such tandem cells is demonstrated. Shorter interface treatment time with phosphorus concentrations in the μc-Si:H i-layer of about 5 × 10{sup 17} cm{sup −3} results in lower conversion efficiencies of 10.6%, mainly due to the decrease of open-circuit voltage and fill factor. - Highlights: • Single-chamber process for a-Si:H/μc-Si:H solar cell is developed. • P- and B-contaminations at n/p interface and μc-Si:H i-layer are quantified by SIMS. • Reactor treatment is required at n/p interface for minimum dopant cross contamination. • Ar-flush pumping of reactor reduces P concentration in μc-Si:H i-layer to 10{sup 17} cm{sup −3}{sub .} • Conversion efficiency of 11.4% is reached at reactor treatment time of 17 min.

  9. A Si nanocube array polarizer

    Chen, Linghua; Jiang, Yingjie; Xing, Li; Yao, Jun

    2017-10-01

    We have proposed a full dielectric (silicon) nanocube array polarizer based on a silicon dioxide substrate. Each polarization unit column includes a plurality of equal spaced polarization units. By optimizing the length, the width, the height of the polarization units and the center distance of adjacent polarization unit (x direction and y direction), an extinction ratio (ER) of higher than 25dB was obtained theoretically when the incident light wavelength is 1550nm. while for applications of most polarization optical elements, ER above 10dB is enough. With this condition, the polarizer we designed can work in a wide wavelength range from 1509.31nm to 1611.51nm. Compared with the previous polarizer, we have introduced a polarizer which is a full dielectric device, which solves the problems of low efficiency caused by Ohmic loss and weak coupling. Furthermore, compared with the existing optical polarizers, our polarizer has the advantages of thin thickness, small size, light weight, and low processing difficulty, which is in line with the future development trend of optical elements.

  10. Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2/n-Si heterojunction solar cells

    Ryota Takabe

    2016-08-01

    Full Text Available Fabrication of p-BaSi2(20nm/n-Si heterojunction solar cells was performed with different a-Si capping layer thicknesses (da-Si and varying air exposure durations (tair prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies (η reached approximately 4.7% regardless of tair (varying from 12–150 h for solar cells with da-Si = 5 nm. In contrast, η increased from 5.3 to 6.6% with increasing tair for those with da-Si = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density (J0 and diode ideality factor decreased with tair, resulting in the enhancement of η. The effects of the variation of da-Si (0.7, 2, 3, and 5 nm upon the solar cell performance were examined while keeping tair = 150 h. The η reached a maximum of 9.0% when da-Si was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and J0 exhibited a tendency to decrease as da-Si increased. These results demonstrate that a moderate oxidation of BaSi2 is a very effective means to enhance the η of BaSi2 solar cells.

  11. HBr Formation from the Reaction between Gas-phase Bromine Atom and Vibrationally Excited Chemisorbed Hydrogen Atoms on a Si(001)-(2 x 1) Surface

    Ree, J.; Yoon, S. H.; Park, K. G.; Kim, Y. H.

    2004-01-01

    We have calculated the probability of HBr formation and energy disposal of the reaction exothermicity in HBr produced from the reaction of gas-phase bromine with highly covered chemisorbed hydrogen atoms on a Si (001)-(2 x 1) surface. The reaction probability is about 0.20 at gas temperature 1500 K and surface temperature 300 K. Raising the initial vibrational state of the adsorbate(H)-surface(Si) bond from the ground to v = 1, 2 and 3 states causes the vibrational, translational and rotational energies of the product HBr to increase equally. However, the vibrational and translational motions of product HBr share most of the reaction energy. Vibrational population of the HBr molecules produced from the ground state adsorbate-surface bond (vHSi = 0) follows the Boltzmann distribution, but it deviates seriously from the Boltzmann distribution when the initial vibrational energy of the adsorbate-surface bond increases. When the vibration of the adsorbate-surface bond is in the ground state, the amount of energy dissipated into the surface is negative, while it becomes positive as vHSi increases. The energy distributions among the various modes weakly depends on surface temperature in the range of 0-600 K, regardless of the initial vibrational state of H(ad)-Si(s) bond

  12. Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

    Dolui, Kapildeb

    2013-04-02

    Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate, the oxide plays an insignificant role since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO 2 are mainly determined by the detailed structure of the MoS 2/SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2-based devices. © 2013 American Physical Society.

  13. Potential energy landscape of an interstitial O2 molecule in a SiO2 film near the SiO2/Si(001) interface

    Ohta, Hiromichi; Watanabe, Takanobu; Ohdomari, Iwao

    2008-10-01

    Potential energy distribution of interstitial O2 molecule in the vicinity of SiO2/Si(001) interface is investigated by means of classical molecular simulation. A 4-nm-thick SiO2 film model is built by oxidizing a Si(001) substrate, and the potential energy of an O2 molecule is calculated at Cartesian grid points with an interval of 0.05 nm in the SiO2 film region. The result shows that the potential energy of the interstitial site gradually rises with approaching the interface. The potential gradient is localized in the region within about 1 nm from the interface, which coincides with the experimental thickness of the interfacial strained layer. The potential energy is increased by about 0.62 eV at the SiO2/Si interface. The result agrees with a recently proposed kinetic model for dry oxidation of silicon [Phys. Rev. Lett. 96, 196102 (2006)], which argues that the oxidation rate is fully limited by the oxidant diffusion.

  14. STM imaging of buried P atoms in hydrogen-terminated Si for the fabrication of a Si:P quantum computer

    Oberbeck, L.; Curson, N.J.; Hallam, T.; Simmons, M.Y.; Clark, R.G

    2004-10-01

    The fabrication of atomic-scale devices in silicon requires the encapsulation of dopant atoms which have been incorporated into the silicon surface at atomically precise positions using scanning tunnelling microscopy (STM) lithography. During silicon encapsulation, it is important to minimise segregation and diffusion of dopant atoms in order to retain the lithography defined device structure. Buried dopant imaging using STM is capable of imaging dopant atoms such as phosphorus after encapsulation in silicon several monolayers below the silicon surface, thus making it possible to check the integrity of the device structure. To fabricate buried phosphorus-doped samples, we use phosphine gas as a source of phosphorus atoms and incorporate the phosphorus atoms into a Si(001) surface during an annealing step. Molecular beam epitaxy is used to encapsulate the dopant atoms with several monolayers of silicon. After encapsulation, we hydrogen terminate the silicon surface in order to image the buried phosphorus dopants using STM. We show that a buried phosphorus atom appears as a bright glow superimposed on the silicon dimer structure in empty state STM images, whereas filled state images only show a very faint protrusion in the vicinity of the phosphorus atom. We highlight the importance of our results for the fabrication of atomic-scale devices.

  15. Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.

    Pérez, Arllene M; Renero, Francisco J; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

    2005-06-29

    Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

  16. STM imaging of buried P atoms in hydrogen-terminated Si for the fabrication of a Si:P quantum computer

    Oberbeck, L.; Curson, N.J.; Hallam, T.; Simmons, M.Y.; Clark, R.G.

    2004-01-01

    The fabrication of atomic-scale devices in silicon requires the encapsulation of dopant atoms which have been incorporated into the silicon surface at atomically precise positions using scanning tunnelling microscopy (STM) lithography. During silicon encapsulation, it is important to minimise segregation and diffusion of dopant atoms in order to retain the lithography defined device structure. Buried dopant imaging using STM is capable of imaging dopant atoms such as phosphorus after encapsulation in silicon several monolayers below the silicon surface, thus making it possible to check the integrity of the device structure. To fabricate buried phosphorus-doped samples, we use phosphine gas as a source of phosphorus atoms and incorporate the phosphorus atoms into a Si(001) surface during an annealing step. Molecular beam epitaxy is used to encapsulate the dopant atoms with several monolayers of silicon. After encapsulation, we hydrogen terminate the silicon surface in order to image the buried phosphorus dopants using STM. We show that a buried phosphorus atom appears as a bright glow superimposed on the silicon dimer structure in empty state STM images, whereas filled state images only show a very faint protrusion in the vicinity of the phosphorus atom. We highlight the importance of our results for the fabrication of atomic-scale devices

  17. Physicochemical interactions resulting from the use of a SiC/SiC composite material in typical environments of future nuclear reactors

    Braun, James

    2014-01-01

    The development of high purity SiC fibers during the nineties has led to their consideration as nuclear reactors components through the use of SiC/SiC composites. SiC and SiC/SiC composites are considered as core materials of future nuclear reactors (SFR, GFR) and as a potential replacement for the zirconium cladding of PWR. Therefore, the thermochemical compatibility of these materials with typical environments of those nuclear reactors has been studied. The composition and the growth kinetics of the reaction zone of SiC towards niobium and tantalum (considered as materials to ensure the leak-tightness of a SiC/SiC cladding for GFR) have been studied between 1050 and 1500 C. High temperature heat treatments in open and closed systems between SiC and UO 2 have shown a significant reactivity over 1200 C characterized by the formation of CO and uranium silicides. Moreover, a liquid phase has been detected between 1500 and 1650 C. The exposure of SiC/SiC to liquid sodium (550 C, up to 2000 h) has been studied as a function of the oxygen concentration dissolved in liquid sodium. An improvement of the mechanical properties of the composites elaborated for this study (increase of the tensile strength and strain at failure) has been highlighted after immersion in the liquid sodium independently of its oxygen concentration. It is believed that this phenomenon is due to the presence of residual sodium in the material. (author) [fr

  18. Effect of a SiO2 buffer layer on the characteristics of In2O3-ZnO-SnO2 films deposited on PET substrates

    Woo, B.-J.; Hong, J.-S.; Kim, S.-T.; Kim, H.-M.; Park, S.-H.; Kim, J.-J.; Ahn, J.-S.

    2006-01-01

    Transparent and conducting In 2 O 3 -ZnO-SnO 2 (IZTO) thin films were prepared on flexible PET substrates at room temperature by using an ion-gun-assisted sputtering technique. We mainly investigated the effect of a SiO 2 buffer layer, deposited in-between the film and the PET substrate, on the electrical stability of the film under various external stresses caused by moist-heat or violent temperature variations. The insertion of the SiO 2 layer improves structural, optical and electrical properties of the films: The IZTO/SiO 2 /PET film with a buffer shows a change (∼4 %) in the sheet resistance much smaller than that of the IZTO/PET film without a buffer (∼22 %), against a severe thermal stress of the repeated processes between quenching at -25 .deg. C and annealing at 100 .deg. C for 5 min at each process. Under a moist-heat stress at 90 % relative humidity at 80 .deg. C, the IZTO/SiO 2 /PET film responds with only a slight change (∼8.5 %) in the sheet resistance from 30.2 to 33.0 Ω/□ after being exposed for 240 h. The enhanced stability is understood to be the result of the buffer layers acting as a blocking barrier to water vapor or organic solvents diffusing from the PET substrate during deposition or annealing.

  19. Temperature dependence of the early degradation in a-Si solar cells; Amorphous Si taiyo denchi no shoki rekka no ondo izonsei

    Takahisa, K; Kojima, T; Nakamura, K; Koyanagi, T; Yanagisawa, T [Electrotechnical Laboratory, Tsukuba (Japan)

    1997-11-25

    Discussions were given on early degradation in up to about ten minutes in amorphous silicon solar cells. The experiment has used a model cell of single junction layer for power use with a Glass/ITO/P-i-n:a-Si/Al structure. Test samples were annealed at 130 degC for 30 minutes to eliminate hysteresis of degradation during storage. Xenon was used as an irradiation light source, and the temperatures were varied from 0 to 100 degC and the measurement time was set to 0.1 to 500 minutes. The result of the experiment may be summarized as follows: with regard to time-based degradation pattern for conversion efficiency, the tilt of a pattern to express degradation rate varies with temperature conditions, and changes in 10 to 20 minutes of light irradiation as a boundary; in long-term degradation after 20 minutes, the higher the environmental temperature, the lower the degradation is suppressed, but the rate of initial degradation up to about 10 minutes is higher as the higher the temperature; and the degradation rate increases as the higher the temperature in the initial degradation of about 10 minutes, whereas, corresponding to this fact, it is estimated that a phenomenon is involved, in which carrier recombination defect may increase. 4 refs., 7 figs., 1 tab.

  20. Design of a plasmonic back reflector using Ag nanoparticles with a mirror support for an a-Si:H solar cell

    Chanse D. Hungerford

    2017-07-01

    Full Text Available Plasmonic nanoparticles have unique optical properties and these properties are affected by any surrounding structures, or lack thereof. Nanoparticles are often added to a device without fully assessing the effect that each interface will have on the nanoparticle’s response. In this work, we simulate and fabricate devices utilizing hemispherical nanoparticles integrated into the back reflector of an amorphous silicon solar cell. 3D finite difference time domain simulations were used to calculate the optical absorption of a 300nm amorphous silicon layer as a function of the size of the nanoparticles, the distance between the nanoparticles and the active layer, and the distance between the nanoparticles and the mirror. Two transparent conducting oxides, aluminum doped zinc oxide and indium tin oxide, are investigated to determine the importance of the material properties between the nanoparticles and mirror. Silver hemispherical nanoparticles with a diameter of 150nm placed directly on the a-Si:H and a 60nm aluminum doped zinc oxide layer between the nanoparticles and the mirror lead to a maximum absorption increase of 7.2% in the 500nm to 800nm wavelength range. Experimental devices confirmed the trends predicted by theory but did not achieve enhancement, likely due to fabrication challenges. Fabricating a solar cell with the simulated design requires a high quality transparent conductive oxide and high control over the nanoparticle size distribution.

  1. Minimization of spurious strains by using a Si bent-perfect-crystal monochromator: neutron surface strain scanning of a shot-peened sample

    Rebelo Kornmeier, Joana; Gibmeier, Jens; Hofmann, Michael

    2011-06-01

    Neutron strain measurements are critical at the surface. When scanning close to a sample surface, aberration peak shifts arise due to geometrical and divergence effects. These aberration peak shifts can be of the same order as the peak shifts related to residual strains. In this study it will be demonstrated that by optimizing the horizontal bending radius of a Si (4 0 0) monochromator, the aberration peak shifts from surface effects can be strongly reduced. A stress-free sample of fine-grained construction steel, S690QL, was used to find the optimal instrumental conditions to minimize aberration peak shifts. The optimized Si (4 0 0) monochromator and instrument settings were then applied to measure the residual stress depth gradient of a shot-peened SAE 4140 steel sample to validate the effectiveness of the approach. The residual stress depth profile is in good agreement with results obtained by x-ray diffraction measurements from an international round robin test (BRITE-EURAM-project ENSPED). The results open very promising possibilities to bridge the gap between x-ray diffraction and conventional neutron diffraction for non-destructive residual stress analysis close to surfaces.

  2. Minimization of spurious strains by using a Si bent-perfect-crystal monochromator: neutron surface strain scanning of a shot-peened sample

    Rebelo Kornmeier, Joana; Hofmann, Michael; Gibmeier, Jens

    2011-01-01

    Neutron strain measurements are critical at the surface. When scanning close to a sample surface, aberration peak shifts arise due to geometrical and divergence effects. These aberration peak shifts can be of the same order as the peak shifts related to residual strains. In this study it will be demonstrated that by optimizing the horizontal bending radius of a Si (4 0 0) monochromator, the aberration peak shifts from surface effects can be strongly reduced. A stress-free sample of fine-grained construction steel, S690QL, was used to find the optimal instrumental conditions to minimize aberration peak shifts. The optimized Si (4 0 0) monochromator and instrument settings were then applied to measure the residual stress depth gradient of a shot-peened SAE 4140 steel sample to validate the effectiveness of the approach. The residual stress depth profile is in good agreement with results obtained by x-ray diffraction measurements from an international round robin test (BRITE-EURAM-project ENSPED). The results open very promising possibilities to bridge the gap between x-ray diffraction and conventional neutron diffraction for non-destructive residual stress analysis close to surfaces

  3. The silicon neighborhood across the a-Si:H to {mu}c-Si transition by X-ray absorption spectroscopy (XAS)

    Tessler, Leandro R.; Wang Qi; Branz, Howard M

    2003-04-22

    We report a synchrotron X-ray absorption spectroscopy study of the average neighborhood of Si near the transition from a-Si:H to {mu}c-Si on wedge-shaped samples prepared by hot-wire CVD in a chamber using a movable shutter. The thickness of the wedge varies from 30 to 160 nm. Nucleation of {mu}c-Si occurs at a critical thickness of approximately 100 nm. X-Ray absorption was measured at the Si K-edge (1.84 keV) by total electron photoemission yield. The absorption oscillations in the EXAFS region are very similar to all along the wedge. Analysis indicates an average tetrahedral first neighbor shell with radial disorder decreasing with crystallization. In the near-edge (XANES) region multiple scattering effects appear at the onset of crystallinity. Unlike single crystal silicon, these effects involve only double scattering within the first neighbor shell, indicating an ill-formed second shell in {mu}c-Si.

  4. Nmr and esr studies on a-Si/sub 1-x/Ge/sub x/:H films prepared by glow discharge and magnetron sputtering

    Shimizu, T.; Kumeda, M.; Morimoto, A.; Tsujimura, Y.; Kobayashi, I.

    1986-01-01

    Properties of a-Si/sub 1-x/Ge/sub x/:H films prepared by magnetron sputtering (MG) and glow discharge decomposition (GD) were compared by means of NMR, ESR, IR and hydrogen-evolution measurements. For MG films, the content of dispersed H is roughly independent of x while the content of clustered H decreases with x. For GD films, both the contents of dispersed and clustered H decrease with x. ESR results reveal that most defects in the films are Ge dangling bonds and that the number of dangling bonds per Ge atom is roughly independent of x for MG films whereas it increases largely with x for GD films. The ratio of the intensity of the IR peak at 2100 cm/sup -1/ to that at 2000 cm/sup -1/ decreases and increases with x, respectively, for MG and GD films, and the ratio of the intensity of the low temperature H evolution peak to that of the high temperature H evolution peak decreases and increases with x, respectively for MG and GD films

  5. In-situ determination of electronic surface and volume defect density of amorphous silicon (a-Si:H) and silicon alloys

    Siebke, F.

    1992-07-01

    The density of localized gap states in the bulk and in the near-surface region of amorphous hydrogenated silicon (a-Si:H) was measured for non oxidized undoped, B-doped and P-doped samples as well as for films with low carbon (C) and germanium (Ge) content. Also the influence of light soaking on the bulk and surface density of states was investigated. The samples were prepared by rf glow discharge in an UHV-system at substrate temperatures between 100degC and 400degC and transferred to the analysis chamber by a vacuum lock. We combined the constant photocurrent method (CPM) and the total-yield photoelectron spectroscopy (TY) to obtain in-situ information about the defect densities. While the first method yields information about the density of states in the bulk, the other method obtains the density of occupied states in the near-surface region. The mean information depth of the TY-measurements is limited by the escape lenght of photoelectrons and can be estimated to 5 nm. In addition to the defect density the position of the Fermi energy was determined for the bulk by dark conductivity measurements and at the surface using a calibrated Kelvin probe. (orig.)

  6. In-situ X-ray tomographic study of the morphological changes of a Si/C paper anode for Li-ion batteries

    Vanpeene, V.; Etiemble, A.; Bonnin, A.; Maire, E.; Roué, L.

    2017-05-01

    The evolution of the three-dimensional (3D) morphology of a Si-based electrode upon cycling (1st discharge, 1st charge and 2nd discharge) is studied by in-situ synchrotron X-ray tomography. The Si-based electrode is constituted of silicon/carbon black/carboxymethylcellulose (Si/CB/CMC) embedded in a commercial carbon fiber paper, acting as a flexible 3D current collector. Its initial areal discharge capacity is 4.9 mAh cm-2. A reconstructed volume of 293 × 293 × 137 μm3 is analyzed with a resolution of ∼0.3 μm. Three phases are identified: (i) the solid phase (C fibers + Si + CB + CMC), (ii) the electrolyte phase (pores filled with electrolyte) and (iii) the gas phase (electrolyte-free pores). Their respective volume fraction, size distribution and connectivity, and also the dimensional changes of the electrode along the three axes are quantified during cycling. At the beginning of the 1st discharge (lithiation), the formation of gas channels attributed to the reductive electrolyte decomposition is observed. During the 1st charge, large cracks are formed through the electrode, which reclose during the subsequent discharge. The electrode expansion/contraction due to the Si volume change is partially irreversible, occurs mainly in the transverse direction and is much larger in the bottom part of the electrode.

  7. Adsorption and surface reaction of bis-diethylaminosilane as a Si precursor on an OH-terminated Si (0 0 1) surface

    Baek, Seung-Bin; Kim, Dae-Hee; Kim, Yeong-Cheol

    2012-01-01

    The adsorption and the surface reaction of bis-diethylaminosilane (SiH 2 [N(C 2 H 5 ) 2 ] 2 , BDEAS) as a Si precursor on an OH-terminated Si (0 0 1) surface were investigated to understand the initial reaction mechanism of the atomic layer deposition (ALD) process using density functional theory. The bond dissociation energies between two atoms in BDEAS increased in the order of Si-H, Si-N, and the rest of the bonds. Therefore, the relatively weak Si-H and Si-N bonds were considered for bond breaking during the surface reaction. Optimum locations of BDEAS for the Si-H and Si-N bond breaking were determined on the surface, and adsorption energies of 0.43 and 0.60 eV, respectively, were obtained. The Si-H bond dissociation energy of the adsorbed BDEAS on the surface did not decrease, so that a high reaction energy barrier of 1.60 eV was required. On the other hand, the Si-N bond dissociation energy did decrease, so that a relatively low reaction energy barrier of 0.52 eV was required. When the surface reaction energy barrier was higher than the adsorption energy, BDEAS would be desorbed from the surface instead of being reacted. Therefore, the Si-N bond breaking would be dominantly involved during the surface reaction, and the result is in good agreement with the experimental data in the literature.

  8. The role of bulk and interface states on performance of a-Si: H p-i-n solar cells using reverse current-voltage technique

    Mahmood, S A; Kabir, M Z; Murthy, R V R; Dutta, V

    2009-01-01

    The defect state densities in the bulk of the i-layer and at the p/i interface have been studied in hydrogenated amorphous silicon (a-Si : H) solar cells using reverse current-voltage (J-V) measurements. In this work the cells have been soaked with blue and red lights prior to measurements. The voltage-dependent reverse current has been analysed on the basis of thermal generation of the carriers from midgap states in the i-layer and the carrier injection through the p/i interface. Based on the reverse current behaviour, it has been analysed that at lower reverse bias (reverse voltage, V r r ∼ 25 V) the defect states at the p/i interface are contributing to the reverse currents. The applied reverse bias annealing (RBA) treatment on these cells shows more significant annihilation of defect states at the p/i interface as compared with the bulk of the i-layer. An analytical model is developed to explain the observed behaviour. There is good agreement between the theory and the experimental observations. The fitted defect state densities are 9.1 x 10 15 cm -3 and 8 x 10 18 cm -3 in the bulk of the i-layer and near the p/i interface, respectively. These values decrease to 2.5 x 10 15 cm -3 and 6 x 10 17 cm -3 , respectively, in the samples annealed under reverse bias at 2 V.

  9. New fabrication technique using side-wall-type plasma-enhanced chemical-vapor deposition for a floating gate memory with a Si nanodot

    Ichikawa, Kazunori; Punchaipetch, Prakaipetch; Yano, Hiroshi; Hatayama, Tomoaki; Uraoka, Yukiharu; Fuyuki, Takashi [Nara Institute of Science and Techonology, Ikoma, Nara (Japan); Tomyo, Atsushi; Takahashi, Eiji; Hayashi, Tsukasa; Ogata, Kiyoshi [Nissin Electric Co., Ltd., Kyoto (Japan)

    2006-08-15

    We have used side-wall-type plasma-enhanced chemical-vapor deposition (PECVD)to fabricate a floating gate memory using a Si nano-crystal dot on thermal SiO{sub 2} at a low temperature of 430 .deg. C. Atomic and radical hydrogen plays an important role in the low-temperature formation of the dot. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) analyses revealed that the average dot size and density were approximately 5 nm and 8.5 X 10{sup 11} cm{sup -2}, respectively. The electronic properties were investigated with metal-oxide-semiconductor-field-effect transistors (MOSFETs) by embedding the nanocrystal dots into SiO{sub 2} fabricated using CVD. Electron charging and discharging were clearly confirmed at room temperature by the transient behavior of the capacitance and the transfer curve. The number of electrons confined in a single dot was approximately one. Furthermore, we evaluated the electronic behavior by varying the bias condition or the operating temperature. The critical charge density could be confirmed to be independent of the injection condition.

  10. Growth of KOH etched AZO nanorods and investigation of its back scattering effect in thin film a-Si solar cell

    Sharma, Jayasree Roy; Mitra, Suchismita; Ghosh, Hemanta; Das, Gourab; Bose, Sukanta; Mandal, Sourav; Mukhopadhyay, Sumita; Saha, Hiranmay; Barua, A. K.

    2018-02-01

    In order to increase the stabilized efficiencies of thin film silicon (TFS) solar cells it is necessary to use better light management techniques. Texturization by etching of sputtered aluminum doped zinc oxide (Al:ZnO or AZO) films has opened up a variety of promises to optimize light trapping schemes. RF sputtered AZO film has been etched by potassium hydroxide (KOH). A systematic study of etching conditions such as etchant concentration, etching time, temperature management etc. have been performed in search of improved electrical and optical performances of the films. The change in etching conditions has exhibited a noticeable effect on the structure of AZO films for which the light trapping effect differs. After optimizing the etching conditions, nanorods have been found on the substrate. Hence, nanorods have been developed only by chemical etching, rather than the conventional development method (hydrothermal method, sol-gel method, electrolysis method etc.). The optimized etched substrate has 82% transmittance, moderate haze in the visible range and sheet resistance ∼13 (Ω/□). The developed nanorods (optimized etched substrate) provide better light trapping within the cell as the optical path length has been increased by using the nanorods. This provides an effect on carrier collection as well as the efficiency in a-Si solar cells. Finite difference time domain (FDTD) simulations have been performed to observe the light trapping by AZO nanorods formed on sputtered AZO films. For a p-i-n solar cell developed on AZO nanorods coated with sputtered AZO films, it has been found through simulations that, the incident light is back scattered into the absorbing layer, leading to an increase in photogenerated current and hence higher efficiency. It has been found that, the light that passes through the nanorods is not getting absorbed and maximum amount of light is back scattered towards the solar cell.

  11. Using chemical wet-etching methods of textured AZO films on a-Si:H solar cells for efficient light trapping

    Lin, Guo-Sheng; Li, Chien-Yu; Huang, Kuo-Chan; Houng, Mau-Phon

    2015-01-01

    In this paper, Al-doped ZnO (AZO) films are deposited on glasses substrate by RF magnetron sputtering. The optical, electrical and morphological properties of AZO films textured by wet-etching with different etchants, H 3 PO 4 , HCl, and HNO 3 are studied. It is found that the textured structure could enhance the light scattering and light trapping ability of amorphous silicon solar cells. The textured AZO film etched with HNO 3 exhibits optimized optical properties (T% ≧ 80% over entire wavelength, haze ratio > 40% at 550 nm wavelength) and excellent electrical properties (ρ = 5.86 × 10 −4 Ωcm). Scanning electron microscopy and Atomic force microscopy are used to observe surface morphology and average roughness of each textured AZO films. Finally, the textured AZO films etched by H 3 PO 4 , HCl and HNO 3 were applied to front electrode layer for p–i–n amorphous silicon solar cells. The highest conversion efficiency of amorphous silicon solar cell fabricated on HNO 3 -etched AZO film was 7.08% with open-circuit voltage, short-circuit current density and fill factor of 895 mV, 14.92 mA/cm 2 and 0.56, respectively. It shows a significantly enhancement in the short-circuit current density and conversion efficiency by 16.2% and 20.2%, respectively, compared with the solar cell fabricated on as-grown AZO film. - Highlights: • The textured surface enhances light scattering and light trapping ability. • The HNO 3 -etched AZO film exhibits excellent optical and electrical properties. • The efficiency of a-Si:H solar cell fabricated on HNO 3 -etched AZO film was 7.08%. • The short-circuit current density enhances to 16.2%. • The conversion efficiency enhances to 20.2%

  12. Structural, elastic, electronic, bonding, and optical properties of BeAZ{sub 2} (A = Si, Ge, Sn; Z = P, As) chalcopyrites

    Fahad, Shah [Department of Physics, Hazara University Mansehra, KPK, Mansehra (Pakistan); Murtaza, G., E-mail: murtaza@icp.edu.pk [Materials Modeling Laboratory, Department of Physics, Islamia College University, Peshawar (Pakistan); Ouahrani, T. [Laboratoire de Physique Théorique, B.P. 230, Université de Tlemcen, Tlemcen 13000 (Algeria); Ecole Préparatoire en Sciences et Techniques, BP 165 R.P., 13000 Tlemcen (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique et de Modélisation Mathématique, Université de Mascara, 29000 (Algeria); Yousaf, Masood [Center for Multidimensional Carbon Materials, Institute for Basic Science, Department of Physics, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Omran, S.Bin [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Mohammad, Saleh [Department of Physics, Hazara University Mansehra, KPK, Mansehra (Pakistan)

    2015-10-15

    A first principles density functional theory (DFT) technique is used to study the structural, chemical bonding, electronic and optical properties of BeAZ{sub 2} (A = Si, Ge, Sn; Z = P, As) chalcopyrite materials. The calculated parameters are in good agreement with the available experimental results. The lattice constants and the equilibrium volume increased as we moved from Si to Ge to Sn, whereas the c/a and internal parameters u decreased by shifting the cation from P to As. These compounds are elastically stable. An investigation of the band gap using the WC-GGA, EV-GGA, PBE-GGA and mBJ-metaGGA potentials suggested that BeSiP{sub 2} and BeSiAs{sub 2} are direct band gap compounds, whereas BeGeP{sub 2,} BeGeAs{sub 2,} BeSnP{sub 2,} BeSnAs{sub 2} are indirect band gap compounds. The energy band gaps decreased by changing B from Si to Sn and increased by changing the anion C from P to As. The bonding among the cations and anions is primarily ionic. In the optical properties, the real and imaginary parts of the dielectric functions, reflectivity and optical conductivity have been studied over a wide energy range. - Highlights: • The compounds are studied by FP-LAPW method within mBJ approximation. • All of the studied materials show isotropic behaviour. • All the compounds show direct band gap nature. • Bonding nature is mostly covalent among the studied compounds. • High absorption peaks and reflectivity ensures there utility in optoelectronic devices.

  13. X-ray photoelectron spectroscopy studies of aging effects on the surface of Au - a-Si:H - Sb-Cr Schottky diodes

    Paquin, L.; Wertheimer, M.R.; Sacher, E.; McIntyre, N.S.

    1989-01-01

    During investigations of Au - a-Si:H - Cr-Sb photovoltaic Schottky diodes, it was observed that photoconversion parameters (I sc ,, V oc , η), improved markedly with time for samples stored for several weeks in ambient air. This was always accompanied by apparent color changes in the area under the top (Au) electrode, from gold to deep purple, and by evolution of its surface conductivity σ from a highly conducting to an insulating state. Profilometry indicated that the colored area rose about 80 nm above the original surface during these changes. These diodes have been examined using depth-profiling surface analytical techniques, namely secondary-ion mass spectroscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy (XPS), but primarily the latter. The XPS studies of the entire layer thickness on the gold electrode were carried out using erosion by Ar + ion bombardment. The XPS line positions were used to infer electrical properties of silicon and gold constituents. The results show that Si atoms first diffuse through the gold electrode, where they react with atmospheric constituents to form a thick layer composed mainly of SiO 2 . this layer is responsible for the observed changes in color, σ, and I sc . The latter change, which leads to a maximum rise in η of about 60%, is felt to result from the fact that the SiO 2 layer acts as an antireflection coating. Gold from the electrode layer also diffuses outward, mixed intimately with the silicon oxide. Further aging results in a degradation of the electrical continuity of the Au electrode, which is believed to be responsible for the observed slow drop in σ. (author). 14 refs., 9 figs

  14. Imaging lysosomal highly reactive oxygen species and lighting up cancer cells and tumors enabled by a Si-rhodamine-based near-infrared fluorescent probe.

    Zhang, Hongxing; Liu, Jing; Liu, Chenlu; Yu, Pengcheng; Sun, Minjia; Yan, Xiaohan; Guo, Jian-Ping; Guo, Wei

    2017-07-01

    Lysosomes have recently been regarded as the attractive pharmacological targets for selectively killing of cancer cells via lysosomal cell death (LCD) pathway that is closely associated with reactive oxygen species (ROS). However, the details on the ROS-induced LCD of cancer cells are still poorly understood, partially due to the absence of a lysosome-targetable, robust, and biocompatible imaging tool for ROS. In this work, we brought forward a Si-rhodamine-based fluorescent probe, named PSiR, which could selectively and sensitively image the pathologically more relavent highly reactive oxygen species (hROS: HClO, HO, and ONOO - ) in lysosomes of cancer cells. Compared with many of the existing hROS fluorescent probes, its superiorities are mainly embodied in the high stability against autoxidation and photoxidation, near-infrared exitation and emission, fast fluorescence off-on response, and specific lysosomal localization. Its practicality has been demonstrated by the real-time imaging of hROS generation in lysosomes of human non-small-cell lung cancer cells stimulated by anticancer drug β-lapachone. Moreover, the probe was sensitive enough for basal hROS in cancer cells, allowing its further imaging applications to discriminate not only cancer cells from normal cells, but also tumors from healthy tissues. Overall, our results strongly indicated that PSiR is a very promising imaging tool for the studies of ROS-related LCD of cancer cells, screening of new anticancer drugs, and early diagnosis of cancers. Copyright © 2017 Elsevier Ltd. All rights reserved.

  15. A comparative study on the direct deposition of μc-Si:H and plasma-induced recrystallization of a-Si:H: Insight into Si crystallization in a high-density plasma

    Zhou, H. P.; Xu, M.; Xu, S.; Feng, Y. Y.; Xu, L. X.; Wei, D. Y.; Xiao, S. Q.

    2018-03-01

    Deep insight into the crystallization mechanism of amorphous silicon is of theoretical and technological significance for the preparation of high-quality microcrystalline/polycrystalline silicon. In this work, we intensively compare the present two plasma-involved routes, i.e., the direct deposition and recrystallization of precursor amorphous silicon (a-Si) films, to fabricate microcrystalline silicon. Both the directly deposited and recrystallized samples show multi-layered structures as revealed by electronic microscopy. High-density hydrogen plasma involved recrystallization process, which is mediated by the hydrogen diffusion into the deep region of the precursor a-Si film, displays significantly different nucleation configuration, interface properties, and crystallite shape. The underlying mechanisms are analyzed in combination with the interplay of high-density plasma and growing or treated surface.

  16. Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

    Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

    2015-10-01

    A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

  17. Using chemical wet-etching methods of textured AZO films on a-Si:H solar cells for efficient light trapping

    Lin, Guo-Sheng; Li, Chien-Yu; Huang, Kuo-Chan; Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw

    2015-06-15

    In this paper, Al-doped ZnO (AZO) films are deposited on glasses substrate by RF magnetron sputtering. The optical, electrical and morphological properties of AZO films textured by wet-etching with different etchants, H{sub 3}PO{sub 4}, HCl, and HNO{sub 3} are studied. It is found that the textured structure could enhance the light scattering and light trapping ability of amorphous silicon solar cells. The textured AZO film etched with HNO{sub 3} exhibits optimized optical properties (T% ≧ 80% over entire wavelength, haze ratio > 40% at 550 nm wavelength) and excellent electrical properties (ρ = 5.86 × 10{sup −4} Ωcm). Scanning electron microscopy and Atomic force microscopy are used to observe surface morphology and average roughness of each textured AZO films. Finally, the textured AZO films etched by H{sub 3}PO{sub 4}, HCl and HNO{sub 3} were applied to front electrode layer for p–i–n amorphous silicon solar cells. The highest conversion efficiency of amorphous silicon solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08% with open-circuit voltage, short-circuit current density and fill factor of 895 mV, 14.92 mA/cm{sup 2} and 0.56, respectively. It shows a significantly enhancement in the short-circuit current density and conversion efficiency by 16.2% and 20.2%, respectively, compared with the solar cell fabricated on as-grown AZO film. - Highlights: • The textured surface enhances light scattering and light trapping ability. • The HNO{sub 3}-etched AZO film exhibits excellent optical and electrical properties. • The efficiency of a-Si:H solar cell fabricated on HNO{sub 3}-etched AZO film was 7.08%. • The short-circuit current density enhances to 16.2%. • The conversion efficiency enhances to 20.2%.

  18. Properties of films and p-i-n photo-transformed structures on the basis of a-Si:H and its alloys, received in glow discharge of a constant current

    Tauasarov, K.

    1997-01-01

    The work devoted to investigation and control of structural, optical and photoelectric properties of films of amorphous hydrogenated silicon and its alloys, deposited in glow discharge of a constant current were done, creation of photo transformed p-i-n structures investigation its photoelectric characteristics. The main results and conclusions: A new method of deposition in glow discharge of a constant current qualitative doping and un doping a-Si:H layer and p-i-n structures on the basis of amorphous hydrogenated silicon was developed. For reception of amorphous p + and n - films for first time synthesised and applied mono-silborina and mono-silphosfin, containing pointed Si-B and Si-P linkages. New layered linear - organized structure in the films a-Si:H (T=200 deg C) was found out with distance between layers 7,5 A-o. Degree of crystallinity from combinational spectrum was determined. Concentration of films and connection between a hydrogen and silicon was determined from a IR-spectrum. It was shown that introduction of vary zone p + layer from a-Si x C 1-x :H into photo transformed p-i-n structure on the basis of a-Si:H results to decreasing of recombination losses in the area of p-i hetero boundary, and as result a photosensitive in the short-wave area of a spectrum increased. Best p-i-n structures in condition of natural illumination had following parameters: density of current of short circuit I sc =12,9 m A/cm 2 , voltage in single course U lm =0,85 V, factor of Ff.=0,55 filling and h=7% efficiency. (author)

  19. An in situ XPS study of growth of ITO on amorphous hydrogenated Si: Initial stages of heterojunction formation upon processing of ITO/a-Si:H based solar cell structures

    Diplas, Spyros; Thoegersen, Annett; Ulyashin, Alexander [SINTEF Materials and Chemistry, Oslo (Norway); Romanyuk, Andriy [University of Basel, Basel (Switzerland)

    2015-01-01

    In this work we studied the interface growth upon deposition of indium-tin oxide (ITO) on amorphous hydrogenated Si (a-Si:H)/crystalline Si (c-Si) structures. The analysis methods used were X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) in combination with in situ film growth with magnetron sputtering. The analysis was complemented with transmission electron microscopy (TEM) of the deposited films. The sputtering equipment was attached to the XPS spectrometer and hence early stage film growth was observed without breaking the vacuum. It was shown that during early deposition stages ITO is reduced by a-Si:H. The reduction is accompanied with formation of metallic In and Sn at the interface. Formation of Sn is more enhanced on a-Si substrates whilst formation of In is more dominant on c-Si substrates. The reduction effect is less intense for amorphous hydrogenated Si as compared to crystalline Si and this is attributed to stronger presence of dangling bonds in the latter than the former. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Development of scientific and technological basis for the fabrication of thin film solar cells on the basis of a-Si:H and {mu}c-Si:H using the 'hot-wire' deposition technique. Final report; Entwicklung wissenschaftlicher und technischer Grundlagen fuer die Herstellung von Duennschichtsolarzellen auf der Basis des a-Si:H und {mu}c-Si:H mit der 'Hot-Wire'-Depositionstechnik. Abschlussbericht

    Schroeder, B.

    2002-01-22

    Two new deposition systems were realized enabling the entire and respectively, large area deposition of a-Si:H based solar cells using the so called 'hot-wire' (HW) CVD. The deposition conditions for appropriate n- and p-doped a-Si:H and {mu}c-Si:H layers have been developed. For the first time in the world a-Si:H based pin solar cells were entirely deposited by the HWCVD method. A maximum initial conversion efficiency of {eta}{sub initial}=8.9% was obtained. After the development of a suitable p/n-tunnel/recombination junction pin-pin tandem structures with a-Si:H absorbers could be entirely fabricated by the HWCVD for the first time in the world, too. A conversion efficiency of {eta}=7% was measured for the tandem cell, after some structural degradation took place. In general, the stability of the HWCVD solar cells is not satisfactory, what could be attributed to a structural instability of the HWCVD-p-layers. For the first time we have deposited nip solar cells on stainless steel substrates entirely by HWCVD ({eta}{sub initial}>6%). The incorporation of {mu}c-Si:H absorber layers by HWCVD or ECWR-PECVD into pin solar cells was not successfull until now. Large area deposition of a-Si:H films has been performed in a simple vacuum vessel. Under consideration of appropriate filament and gas supply geometry as well as simulation calculations a good electronic quality and a film thickness uniformity of {delta}d={+-}2.5% of the material was obtained. i-layers for small area solar cells on an area of 20 x 20 cm{sup 2} have been deposited which could be completed to solar cells with very uniform conversion efficiencies of {eta}{sub initial} = 6,1{+-}0.2%. This result represents a proof of concept for the large area deposition of a-Si:H based solar cells using the HWCVD. Also for the first time the HWCVD was used for the deposition of emitter layers on c-Si-wafers to realize hetero solar cells. Hetero solar cells with amorphous, microcrystalline and epitaxial n

  1. Structural investigation of the amorphous/crystalline interface by means of quantitative high-resolution transmission electron microscopy on the systems a-Si/c-Si and a-Ge/c-Si; Strukturelle Untersuchung der amorph/kristallinen Grenzflaeche mittels quantitativer hochaufloesender Transmissionselektronenmikroskopie an den Systemen a-Si/c-Si und a-Ge/c-Si

    Thiel, K.

    2006-11-02

    In this Thesis the interfaces between covalently bonded crystalline and amorphous materials were studied with regard to the induced ordering in the amorphous material in the interfacial region by means of high-resolution transmission electron microscopy (HREM). The interface between amorphous germanium and crystalline silicon and the interface between amorphous and crystalline silicon served as material system. In order to quantify the influence of the crystalline order on the amorphous material, the HREM images were periodically averaged along the interface. The intensity components, which are correlated with the period of the lattice image, could thus be separated from the statistical intensity fluctuations, which are characteristic for images of amorphous materials. Since amorphous materials can only be described meaningful by statistical distribution functions, for the induced order a three-dimensional distribution function {rho}{sub 3D}(r) was taken as a basis, which describes the probability to find an atom in the amorphous material, if r=0 is the position of an atom in the crystal. Its two-dimensional projection, {rho}, can be determined using iterative image matching techniques on averaged experimental and simulated interface images. For the analyzed material systems {rho} exhibits lateral ordering as well as a pronounced layering in the vicinity of the interface. In the case of the a-Si/c-Si sample the mean orientation of bonds was 70.5 , as is in the case of the undistorted diamond lattice, while for the a-Ge/c-Si sample 65 resulted. The standard deviation for the distribution of the deviations from the mean bond angle yields for the a-Ge/c-Si sample in the first atomic layer a value of 11.3 and for the a-Si/c-Si sample 1.9 . These results suggest the conclusion, that the differences in these values are to be interpreted as the reaction of the amorphous material to the volume misfit. Although for both material systems 1.4 nm was calculated for the width

  2. Sensitive detection of hydrogen in a-Si:H by coincidence measurement of elastically scattered 100 MeV /sup 3/He/sup 2 +/ ions and recoil protons

    Fukada, Noboru; Imura, Takeshi; Hiraki, Akio [Osaka Univ., Suita (Japan). Faculty of Engineering; Itahashi, Takahisa; Fukuda, Tomokazu; Tanaka, Masayoshi

    1982-09-01

    We have drastically improved the sensitivity of the nuclear elastic scattering (NES) method for determining hydrogen concentrations in hydrogenated amorphous silicon (a-Si:H) films. A beam of 100 MeV /sup 3/He/sup 2 +/ ions was used in the experiment. By taking the coincidence of detection of the scattered /sup 3/He ion with that of the recoil proton, we could achieve a sensitivity of 0.1 atomic percent with a precision of about 1 percent for 1 ..mu..m films.

  3. Ion Beam Analysis, structure and corrosion studies of nc-TiN/a-Si{sub 3}N{sub 4} nanocomposite coatings deposited by sputtering on AISI 316L

    García, J. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Canto, C.E. [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Flores, M. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Andrade, E., E-mail: andrade@fisica.unam.mx [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rodríguez, E.; Jiménez, O. [Departamento de Ingeniería de Proyectos, CUCEI, Universidad de Guadalajara, J. Guadalupe Zuno 48, Los Belenes, Zapopan, Jal. 45101 (Mexico); Solis, C.; Lucio, O.G. de [Instituto de Física, UNAM, Avenida de la Investigación S/N, Coyoacán, México, D.F. 04510 (Mexico); Rocha, M.F. [ESIME-Z, Instituto Politécnico Nacional, ALM Zacatenco, México, D.F. 07738 (Mexico)

    2014-07-15

    In this work, nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4}, were deposited on AISI 316L stainless steel substrate by a DC and RF reactive magnetron co-sputtering technique using an Ar–N{sub 2} plasma. The structure of the coatings was characterized by means of XRD (X-ray Diffraction). The substrate and coating corrosion resistance were evaluated by potentiodynamic polarization using a Ringer solution as electrolyte. Corrosion tests were conducted with the purpose to evaluate the potential of this coating to be used on biomedical alloys. IBA (Ion Beam Analysis) techniques were applied to measure the elemental composition profiles of the films and, XPS (X-ray Photoelectron Spectroscopy) were used as a complementary technique to obtain information about the compounds present in the films. The nanocomposite coatings of nc-TiN/a-Si{sub 3}N{sub 4} show crystalline (TiN) and amorphous (Si{sub 3}N{sub 4}) phases which confer a better protection against the corrosion effects compared with that of the AISI 316L.

  4. Effect of surface irradiation during the photo-CVD deposition of a-Si:H thin films. Hikari CVD ho ni yoru amorphous silicon sakuseiji no kiban hikari reiki koka

    Tasaka, K.; Doering, H.; Hashimoto, K.; Fujishima, A. (The University of Tokyo, Tokyo (Japan))

    1990-12-06

    This paper shows the impact of the irradiation from an additional light source during the deposition of hydrogenated amorphous silicon by photo-CVD deposition. Using a mercury sensitized photo-CVD process from Disilan (Si {sub 2} H {sub 6}) and hydrogen, silicon was deposited. A 40W low pressure mercury lamp was applied as the light source. A portion of the substrate was in addition irradiated using an Xg-He lamp through a thermal filter. Irradiation of the substrate using only Xg-He lamp produced no deposition, since this light has a wavelength which is too long to produce the SiH {sub 3}-radicals needed for Si deposition. The additional Xg-He light source was discovered to cause an increased thickness of deposited a-Si:H film and a transmission of the band structure. The reasons of these are considered that the influence of irradiation is not limited to film thickness, but that irradiation also impacts the composition of the a-Si:H film so as to cause a reduction in the hydrogen content. 10 figs., 1 tab.

  5. Development and optimization of processes for producing highly efficient large-area PV modules based on amorphous silicon. Final report; Entwicklung und Optimierung von Prozessen zur Fertigung hocheffizienter grossflaechiger a-Si-PV-Module. Abschlussbericht

    Maurus, H.; Ruebel, H.; Frammelsberger, W.; Geyer, R.; Lechner, P.; Psyk, W.; Schade, H.

    2001-07-31

    This report contains fundamental topics on further developing the PV technology based on amorphous silicon (a-Si), namely upscaling of laboratory processes to production size areas, improvement of patterning processes to minimize area losses due to monolithic series connection of cells, speeding up individual process steps while maintaining their reproducibility, long-term stability of encapsulated modules. Among the superstrate technologies of the competitors, the module efficiency has reached an international standard. The throughput of the pilot production line has been substantially increased by improving the process cycle times and the equipment uptime. (orig.) [German] Der vorliegende Bericht beinhaltet grundlegende Arbeiten zur Weiterentwicklung der a-Si PV-Technologie. Er behandelt die Themen: Aufskalierung von kleinflaechiger Laborabscheidetechnologie auf groessere industrierelevante Flaechen, Verbesserung und Optimierung von Strukturierungsverfahren fuer hohe Flaechenausnutzung, Beschleunigung und Reproduzierbarkeit der Einzelprozesse sowie Langzeitstabilitaet von verkapselten Modulen. Der Modulwirkungsgrad hat - verglichen mit gleichartiger Technologie von Wettbewerbern - internationalen Standard erreicht. Der Durchsatz der Pilotfertigungsanlage konnte aufgrund der Verbesserung der wirtschaftlichen Kenngroessen Anlagenverfuegbarkeit und Taktzeit wesentlich erhoeht werden. (orig.)

  6. Research and development of photovoltaic power system. Study of carrier dynamics in a-Si from optical and optoelectronic properties; Taiyoko hatsuden system no kenky kaihatsu. Amorphous silicon no koden tokusei to sono carrier dynamics no kogakuteki kenkyu

    Hamakawa, K [Osaka University, Osaka (Japan). Faculty of Engineering Science

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on an optical study of optoelectronic properties of amorphous silicon and its carrier dynamics. Studies have been performed on elucidation of the optoelectronic conversion mechanism in an a-Si film p-i-n junction system and the relationship of the mechanism with the optoelectronic properties. In the studies, optically induced defect level distribution was evaluated by using the modulated optical current spectroscopy, and confirmation was made on model forecast and qualitative agreement, such as large increase in neutral defect levels in association with beam irradiation. In research on elucidation of a film forming mechanism for a-Si based alloys, and material property control, a high-sensitivity reflective infrared spectroscopy was used to observe mechanisms such as treatments and processes given in device fabrication. In research on optical and optoelectronic properties of an s-Si alloy thin film by using the modulated spectroscopy, a new evaluation technology dealing with amorphous semiconductors was developed. The technology separately evaluates carrier migration factors of electrons and holes by combining polarization angle dependence of electro-absorption signals with hole migration measurements. 4 figs.

  7. Design Multilayer Antireflection Coatings for Terrestrial Solar Cells

    Feng Zhan

    2014-01-01

    Full Text Available In order to analyze the influence of methods to design antireflection coatings (ARCs on reflectivity of broadband solar cells, we provide detailed analyses about the ARC coupled with a window layer and the refractive index dispersion effect of each layer. By multidimensional matrix data simulation, two methods were employed to measure the composite reflection of a SiO2/ZnS double-layer ARC within the spectral ranges of 300–870 nm (dual junction and 300–1850 nm (triple junction under AM1.5 solar radiation. A comparison study, between the results obtained from the commonly used weighted average reflectance method (WAR and that from the introduced effective average reflectance method (EAR, shows that the optimization of ARC by EAR method is convenient and feasible.

  8. Photoelectrochemical based direct conversion systems for hydrogen production

    Kocha, S.; Peterson, M.; Arent, D. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-10-01

    Photon driven, direct conversion systems consist of a light absorber and a water splitting catalyst as a monolithic system; water is split directly upon illumination. This one-step process eliminates the need to generate electricity externally and subsequently feed it to an electrolyzer. These configurations require only the piping necessary for transport of hydrogen to an external storage system or gas pipeline. This work is focused on multiphoton photoelectrochemical devices for production of hydrogen directly using sunlight and water. Two types of multijunction cells, one consisting of a-Si triple junctions and the other GaInP{sub 2}/GaAs homojunctions, were studied for the photoelectrochemical decomposition of water into hydrogen and oxygen from an aqueous electrolyte solution. To catalyze the water decomposition process, the illuminated surface of the device was modified either by addition of platinum colloids or by coating with ruthenium dioxide. These colloids have been characterized by gel electrophoresis.

  9. Efficiency Evaluation of a Photovoltaic System Simultaneously Generating Solar Electricity and Hydrogen for Energy Storage

    Abermann S.

    2012-10-01

    Full Text Available The direct combination of a photovoltaic system with an energy storage component appears desirable since it produces and stores electrical energy simultaneously, enabling it to compensate power generation fluctuations and supply sufficient energy during low- or non-irradiation periods. A novel concept based on hydrogenated amorphous silicon (a-Si:H triple-junction solar cells, as for example a-Si:H/a-SiGe:H/a-SiGe:H, and a solar water splitting system integrating a polymer electrolyte membrane (PEM electrolyser is presented. The thin film layer-by-layer concept allows large-area module fabrication applicable to buildings, and exhibits strong cost-reduction potential as compared to similar concepts. The evaluation shows that it is possible to achieve a sufficient voltage of greater than 1.5 V for effective water splitting with the a-Si based solar cell. Nevertheless, in the case of grid-connection, the actual energy production cost for hydrogen storage by the proposed system is currently too high.

  10. Highly stable piezo-immunoglobulin-biosensing of a SiO2/ZnO nanogenerator as a self-powered/active biosensor arising from the field effect influenced piezoelectric screening effect.

    Zhao, Yayu; Fu, Yongming; Wang, Penglei; Xing, Lili; Xue, Xinyu

    2015-02-07

    Highly stable piezo-immunoglobulin-biosensing has been realized from a SiO2/ZnO nanowire (NW) nanogenerator (NG) as a self-powered/active biosensor. The piezoelectric output generated by the SiO2/ZnO NW NG can act not only as a power source for driving the device, but also as a sensing signal for detecting immunoglobulin G (IgG). The stability of the device is very high, and the relative standard deviation (RSD) ranges from 1.20% to 4.20%. The limit of detection (LOD) of IgG on the device can reach 5.7 ng mL(-1). The response of the device is in a linear relationship with IgG concentration. The biosensing performance of SiO2/ZnO NWs is much higher than that of bare ZnO NWs. A SiO2 layer uniformly coated on the surface of the ZnO NW acts as the gate insulation layer, which increases mechanical robustness and protects it from the electrical leakages and short circuits. The IgG biomolecules modified on the surface of the SiO2/ZnO NW act as a gate potential, and the field effect can influence the surface electron density of ZnO NWs, which varies the screening effect of free-carriers on the piezoelectric output. The present results demonstrate a feasible approach for a highly stable self-powered/active biosensor.

  11. Low-temperature, solution-processed aluminum-doped zinc oxide as electron transport layer for stable efficient polymer solar cells

    Zhu, Qianqian [College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Bao, Xichang, E-mail: baoxc@qibebt.ac.cn [Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Yu, Jianhua [College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Zhu, Dangqiang [Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Zhang, Qian [College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Gu, Chuantao [Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Dong, Hongzhou [College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Yang, Renqiang [Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101 (China); Dong, Lifeng, E-mail: DongLifeng@qust.edu.cn [College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Department of Physics, Hamline University, St. Paul, MN 55104 (United States)

    2016-04-30

    A simple low-temperature solution-processed zinc oxide (ZnO) and aluminum-doped ZnO (AZO) were synthesized and investigated as an electron transport layer (ETL) for inverted polymer solar cells. A solar cell with a blend of poly(4,8-bis-alkyloxy-benzo[1,2-b:4,5-b′] dithiophene-alt-alkylcarbonyl-thieno [3,4-b] thiophene) and (6,6)-phenyl-C71-butyric acid methyl ester as an active layer and AZO as ETL demonstrates a high power conversion efficiency (PCE) of 7.36% under the illumination of AM 1.5G, 100 mW/cm{sup 2}. Compared to the cells with ZnO ETL (PCE of 6.85%), the PCE is improved by 7.45% with the introduction of an AZO layer. The improved PCE is ascribed to the enhanced short circuit current density, which results from the electron transport property of the AZO layer. Moreover, AZO is a more stable interfacial layer than ZnO. The PCE of the solar cells with AZO as ETL retain 85% of their original value after storage for 120 days, superior to the 39% of cells with ZnO ETL. The results above indicate that a simple low-temperature solution-processed AZO film is an efficient and economical ETL for high-performance inverted polymer solar cells. Due to its environmental friendliness, good electrical properties, and simple preparation approach, AZO has the potential to be applied in high-performance, large-scale industrialization of solar cells and other electronic devices. - Highlights: • ZnO and AZO were synthesized by a simple low-temperature solution-processed method. • AZO films show high transmittance and conductivity. • The photovoltaic performance can be improved with AZO as ETL. • AZO-based devices demonstrate excellent stability, with 85% retained after 120 days.

  12. (Pyridine)(tetrahydroborato)zinc complex, (Zn(BH4)2(py)), as a new stable, efficient and chemoselective reducing agent for reduction of carbonyl compounds

    Zeynizadeh, Behzad; Faraji, Fariba

    2003-01-01

    (Pyridine)(tetrahydroborato)zinc complex, (Zn(BH 4 ) 2 (py)), as a stable white solid, was prepared quantitatively by complexation of an equimolar amount of zinc tetrahydroborate and pyridine at room temperature. This reagent can easily reduce variety of carbonyl compounds such as aldehydes, ketones, acyloins, α-diketones and α,β-unsaturated carbonyl compounds to their corresponding alcohols in good to excellent yields. Reduction reactions were performed in ether or THF at room temperature or under reflux conditions. In addition, the chemoselective reduction of aldehydes over ketones was accomplished successfully with this reducing agent

  13. (Pyridine)(tetrahydroborato)zinc complex, (Zn(BH{sub 4}){sub 2}(py)), as a new stable, efficient and chemoselective reducing agent for reduction of carbonyl compounds

    Zeynizadeh, Behzad; Faraji, Fariba [Urima Univ., Urima (Iran, Islamic Republic of)

    2003-04-01

    (Pyridine)(tetrahydroborato)zinc complex, (Zn(BH{sub 4}){sub 2}(py)), as a stable white solid, was prepared quantitatively by complexation of an equimolar amount of zinc tetrahydroborate and pyridine at room temperature. This reagent can easily reduce variety of carbonyl compounds such as aldehydes, ketones, acyloins, {alpha}-diketones and {alpha},{beta}-unsaturated carbonyl compounds to their corresponding alcohols in good to excellent yields. Reduction reactions were performed in ether or THF at room temperature or under reflux conditions. In addition, the chemoselective reduction of aldehydes over ketones was accomplished successfully with this reducing agent.

  14. Multifunctional a-Si PV systems

    Peippo, K; Lund, P; Vartiainen, E [Helsinki Univ. of Technology, Otaniemi (Finland). Advanced Energy Systems

    1998-10-01

    The optimal use of the various forms of solar energy (passive, active, daylighting, photovoltaics) in buildings calls for an optimal integration of the technologies. As energy conservation potential in space heating may soon be exhausted, electricity efficiency and on-site generation will play an increasing role in energy-conscious building design. There, dispersed PV systems integrated into buildings show a significant market potential, due to a number of benefits: no extra land area is required, PV-array may replace conventional cladding materials and become a building element. Moreover, the produced PV-electricity is more valuable for the building owner than for an electric utility

  15. O lado de dentro da experiência: atenção a si mesmo e produção de subjetividade numa oficina de cerâmica para pessoas com deficiência visual adquirida

    Virgínia Kastrup

    Full Text Available Pessoas acometidas pela perda da visão são confrontadas com a necessidade de reorganização de seu sistema cognitivo e de reinvenção de suas vidas. O objetivo deste texto é discutir os efeitos da experiência de trabalhar com cerâmica, analisando os dois lados do funcionamento da atenção de pessoas com deficiência visual adquirida: a atenção à argila e a atenção a si mesmo durante o processo de criação. Toma como referências principais os trabalhos de J. Dewey sobre experiência estética, de G. Simondon sobre o processo de individuação e de F. Varela e S. Weil sobre a atenção. O texto resulta de uma pesquisa realizada numa oficina de cerâmica do Instituto Benjamin Constant, no Rio de Janeiro. A cerâmica é analisada em suas características de maleabilidade, temporalidade lenta e imprevisibilidade. A partir do conceito de cognição inventiva, são analisados os efeitos da expressão artística na produção da subjetividade e na reinvenção do território existencial dos deficientes visuais.

  16. Energy dispersive X-ray fluorescence from useless tyres samples with a Si PIN detector; Fluorescencia de raios X por dispersao em energia de amostras de pneus inserviveis com detector de Si-PIN

    Lopes, Fabio; Scheibel, Viviane [Universidade Estadual de Londrina, PR (Brazil). Dept. de Fisica. Lab. de Fisica Nuclear Aplicada]. E-mail: bonn@uel.br; Melquiades, Fabio Luiz [Universidade Estadual do Centro-Oeste, Guarapuava, PR (Brazil). Dept. de Fisica; Moraes, Liz Mary Bueno de [Centro de Energia Nuclear na Agricultura (CENA), Piracicaba, SP (Brazil). Lab. de Instrumentacao Nuclear

    2005-07-01

    The concentration of Zn from discard tyre samples is of environmental interest, since on its production are used S for the rubber vulcanization process, and Zn O as reaction catalyze. The useless tyres are been used for asphalt pave, burn in cement industry and thermoelectric power plant and in erosion control of agriculture areas. Analyses of these samples requires frequently chemical digestion that is expensive and take a long time. Trying to eliminate these limitations, the objective of this work was use Energy Dispersive X Ray Fluorescence technique (EDXRF) with a portable system as the technique is multi elementary and needs a minimum sample preparation. Five useless tyres samples were grind in a knife mill and after this in a cryogenic mill, and analyzed in pellets form, using a X ray mini tube (Ag target, Mo {sub l}ter, 25 kV/20 {sub A}) for 200 s and a Si-PIN semiconductor detector coupled to a multichannel analyzer. Were obtained Zn concentrations in the range of 40.6 to 44.2 {sub g} g{sub 1}, representing nearly 0.4. (author)

  17. Energy-dispersive X-ray fluorescence of discarded tire samples, using a Si-PIN detector; Fluorescencia de raios X por dispersao em energia de amostras de pneus inserviveis com detector de Si-Pin

    Lopes, Fabio; Appoloni, C.R., E-mail: bonn@uel.b [Universidade Estadual de Londrina (UEL), PR (Brazil). Dept. de Fisica. Lab. de Fisica Nuclear Aplicada; Melquiades, Fabio L. [Universidade Estadual do Centro Oeste (UNICENTRO), Guarapuava, PR (Brazil). Dept. de Fisica

    2007-07-01

    The determination of zinc concentration in samples of discarded tires is of great environmental interest because the process for manufacturing tyres uses S for rubber vulcanization, and ZnO is the reaction catalyst. Discarded tyres are being used in asphalt paving, in the burning process of thermoelectric and cement industries and also for controlling erosion in agricultural areas. Analysis of tyre samples usually requires chemical digestion which is slow and expensive. Aiming to eliminate those limitations, this work uses energy-dispersive X-ray fluorescence (EDXRF) with a portable equipment, once it is a simultaneous multi-element analytical technique, requiring minimal sample preparation. Five samples of discarded tyres have been ground and analysed in the form of pastilles, using a mini X-ray tube (Ag target, MO filter, 25 kV/20 muA) for 200 s, and a Si-PIN semiconductor detector coupled to a multichannel analyser. Zinc concentrations in the range of 40.6 to 44.2 mug g{sup -1} have been obtained, representing 0.4% of the tire composition, which is below the maximum value (2%) recommended by the European Tyre Recycling Association. Concentrations between 0.15 and 0.52 mug g{sup -1} were obtained for Fe

  18. 3D cellular automata finite element (CAFE) modelling and experimental observation of damage in quasi-brittle nuclear materials: Indentation of a SiC-SiC-fibre ceramic matrix composite

    Saucedo Mora, Luis; Mostafavi, Mahmoud; Marrow, T. James; Khoshkhou, Danial; Connolly, Brian; Reinhard, Christina; Atwood, Robert; Zhao, Shuang

    2015-01-01

    Cellular automata integrated with finite elements (CAFE) have been used to develop a method to account for the effect of microstructure on quasi-brittle damage development. The microstructure is simulated explicitly by subdividing a finite element into smaller cells. A heterogeneous structure is created from key cells (seeds) using defined characteristics; the influence of the initial finite element mesh is effectively removed during the development of the microstructure. Graded microstructures, textures, particle anisotropy and multiple phases can be readily simulated, such as those in composites and porous materials. A mesh-free framework has been developed to compute the damage development through the microstructure, using cellular automata. With this method, we can study the development of discontinuous cracking and damage coalescence, and its sensitivity to microstructure. Experiments have been carried out to observe the three-dimensional development of damage, using high-resolution synchrotron X-ray computed tomography and digital volume correlation to observe Hertzian indentation of a SiC-SiC fibre composite, quantifying damage by measurement of the displacement fields within the material. The results demonstrate the applicability of the modelling strategy to damage development, and show how model input data may be obtained from small specimen tests, which could be performed at elevated temperatures with irradiated materials. (authors)

  19. Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH4-C2H4-H2 System

    Liu Bin; Sun Guo-Sheng; Liu Xing-Fang; Zhang Feng; Dong Lin; Zheng Liu; Yan Guo-Guo; Liu Sheng-Bei; Zhao Wan-Shun; Wang Lei; Zeng Yi-Ping; Wang Zhan-Guo; Li Xi-Guang; Yang Fei

    2013-01-01

    Homoepitaxial growth of 4H-SiC epilayers is conducted in a SiH 4 -C 2 H 4 -H 2 system by low pressure hot-wall vertical chemical vapor deposition (CVD). Thick epilayers of 45 μm are achieved at a high growth rate up to 26 μm/h under an optimized growth condition, and are characterized by using a Normaski optical microscope, a scanning electronic microscope (SEM), an atomic force microscope (AFM) and an x-ray diffractometer (XRD), indicating good crystalline quality with mirror-like smooth surfaces and an rms roughness of 0.9 nm in a 5 μm × 5μm area. The dependence of the 4H-SiC growth rate on growth conditions on 4° off-axis 4H-SiC substrates and its mechanism are investigated. It is found that the H 2 flow rate could influence the surface roughness, while good surface morphologies without Si droplets and epitaxial defects such as triangular defects could be obtained by increasing temperature

  20. Microscopic Mechanism of the Staebler-Wronski Effect in a-Si Films and High-Efficiency Solar Cells: Final Subcontract Report, 1 October 2001--30 September 2004

    Han, D.

    2005-05-01

    In high growth rate ({ge} 50 {angstrom}/s) HW-CVD a-Si:H films, for the first time, we show gaseous molecules in nanovoids ({approx}2% volume fraction of tube-like nanoscale voids), and demonstrate that confinement on the nanometer scale generates NMR effects that have never been observed in macroscopic systems. In the same system we found the PL peak red shift. We suggest that highly strained bonds on the inner surfaces of the nanoscale voids form broad conduction-band tail states that are responsible for the PL red shift. We characterized the structural transition from a- to nc-Si as function of H-dilution, thickness and T{sub s} of both HW- and PE-CVD films using IR, Raman, PL, CPM/PDS and E{sub a} et al. We found not only the c-Si volume fraction but also the g.b. and microstructures play an important role in the properties of the i-layer and their solar cell performance. We found a narrow structural transition zone in which the bond-angle variation, {Delta}{Theta}, decreases from 10{sup o} to 8{sup o}. For nc-Si samples, we found a characteristic low energy PL peak and proved that is originated from the g.b. regions. Using micro-Raman, we found the structural non-uniformity in the mixed-phase solar cells that showed V{sub oc} enhancement after light soaking. Using micro-Raman, we also found the slight increase of crystallinity in M/{mu}c-Si/M devices after current forming.

  1. Roll-to-roll manufacturing of amorphous silicon alloy solar cells with in situ cell performance diagnostics

    Izu, M.; Ellison, T.

    2003-01-01

    In order to meet the price target necessary for widespread use of solar cell products, Energy Conversion Devices, Inc., ECD, has developed and commercialized a continuous roll-to-roll manufacturing technology for the production of a-Si alloy solar cells. Since the early 1980s, we have advanced this technology from a small-scale pilot machine to a large-scale production machine. In 2002, ECD commissioned a 30 MW per year machine for United Solar Systems Corp. in Auburn Hills, Michigan. The RF PECVD a-Si alloy solar cell processor, designed and built by ECD, deposits triple-junction solar cell materials consisting of nine layers of a-Si alloys in a continuous roll-to-roll operation simultaneously on six coils of 130 μm thick, 0.36 m wide, 2.6 km long stainless-steel substrate at 1 cm/s. In order to minimize production losses due to undetected deviations of production conditions and carry on a continuous program of device optimization, we have developed and are incorporating in situ cell performance diagnostic systems. (author)

  2. Implementation of a Comprehensive On-Line Closed-Loop Diagnostic System for Roll-to-Roll Amorphous Silicon Solar Cell Production: Annual Report, Year Two; 1 September 2003--31 August 2004

    Ellison, T.

    2005-02-01

    Energy Conversion Devices, Inc. (ECD) has developed and built 7 generations of roll-to-roll amorphous silicon PV production equipment. In the ECD/United Solar Ovonic production process, we deposit about a 1-mm-thick, 12-layer coating consisting of a metal/oxide backreflector, a - layer a-Si/a-SiGe alloy triple-junction solar cell, and a top transparent conductive oxide coating onto 125-mm-thick, 35.5-cm-wide stainless steel webs in a series of three roll-to-roll deposition machines. ECD has now completed the Phase II work for this program. In the following report, we summarize the Phase II work in each of these tasks. We have involved United Solar production personnel in each of these Tasks. This is important for two reasons: Firstly, the collaboration of ECD and United Solar personnel keeps the projects responsive to the developing needs at United Solar. Secondly, most of the tasks affect operations and consequently need the support of United Solar production and QA/QC managers. In the process, we have developed a good working relationship between the production personnel and good balance between optimizing production, while also ''adiabatically'' improving the manufacturing equipment.

  3. Observation of a New Mechanism Balancing Hardening and Softening in Metals

    Yu, Tianbo; Hansen, Niels; Huang, Xiaoxu

    2014-01-01

    Plastic deformation of metals refines the microstructure and increases the strength through work hardening, but this effect of deformation is counterbalanced by dynamic recovery. After large strain, the microstructure typically shows a lamellar morphology, with finely spaced lamellar boundaries...... connected by triple junctions. Here, we report that mechanically assisted triple junction motion is an important contributor to dynamic recovery, leading to an almost steady state. Triple junction motion replaces two boundaries by one, while maintaining the structural morphology. The observation...... rationalizes both a decreasing work hardening rate and the approach to a dynamic equilibrium of structural refinement at large strains....

  4. Homo-Tandem Polymer Solar Cells withVOC>1.8 V for Efficient PV-Driven Water Splitting

    Gao, Yangqin; Le Corre, Vincent M.; Gaï tis, Alexandre; Neophytou, Marios; Hamid, Mahmoud Abdul; Takanabe, Kazuhiro; Beaujuge, Pierre

    2016-01-01

    Efficient homo-tandem and triple-junction polymer solar cells are constructed by stacking identical subcells composed of the wide-bandgap polymer PBDTTPD, achieving power conversion efficiencies >8% paralleled by open-circuit voltages >1.8 V

  5. High Radiation Resistance Inverted Metamorphic Solar Cell, Phase II

    National Aeronautics and Space Administration — The innovation in this SBIR Phase II project is the development of a unique triple junction inverted metamorphic technology (IMM), which will enable the...

  6. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase II

    National Aeronautics and Space Administration — We are proposing to utilize quantum dots to develop a super high-efficiency multijunction III-V solar cell for space. In metamorphic triple junction space solar...

  7. Rooftop PV system. PV:BONUS Phase 3B, final technical report

    NONE

    1998-11-01

    Under the PV:BONUS Program, ECD and United Solar developed, demonstrated and commercialized two new lightweight, flexible BIPV modules specifically designed as replacements for conventional asphalt shingles and standing seam metal roofing. These modules can be economically and aesthetically integrated into new residential and commercial buildings, and can be used to address the even larger roofing-replacement market. An important design feature of these modules, which minimizes the installation and balance-of-system costs, is their ability to be installed by conventional roofing contractors without special training. The modules are fabricated from high-efficiency, triple-junction spectrum-splitting a-Si alloy solar cells developed by ECD and United Solar. These cells are produced on thin, flexible stainless steel substrates and encapsulated with polymer materials. The Phase 3 program began in August 1995. The principal tasks and goals of this program, which have all been successfully completed by ECD and United Solar, are described in the body and appendices of this report.

  8. Applications of AMPS-1D for solar cell simulation

    Zhu, Hong; Kalkan, Ali Kaan; Hou, Jingya; Fonash, Stephen J.

    1999-03-01

    The AMPS-1D PC computer program is now used by over 70 groups world-wide for detector and solar cell analysis. It has proved to be a very powerful tool in understanding device operation and physics for single crystal, poly-crystalline and amorphous structures. For example, AMPS-1D has been successful in explaining the "red kink" [1] and the "transient effect" in CdS/CIGS poly-crystalline solar cells. It has been used to show that thin film poly-Si structures, with reasonable light trapping, are capable of competitive solar cell conversion efficiencies. In the case of a-Si:H structures, it has been used, for example, to settle the discrepancies in bandgap measurement, to predict the effective QE>1 phenomenon later seen in these materials [2], to determine the relative roles of interface and bulk properties, and to point the direction toward 16% triple junction structures. In general AMPS-1D is used for cell and detector design, material parameter sensitivity studies, and parameter extraction. Recently we have shown that it can be used to determine optimum structure and light and voltage biasing conditions in the material parameter extraction function. Information on AMPS can be found at www.psu.edu/dept/AMPS/amps_web/AMPS.html and at other web sites set up by user groups.

  9. Parametric excitation of a SiN membrane via piezoelectricity

    Shuhui Wu

    2018-01-01

    Full Text Available We develop a stoichiometric silicon nitride (SiN membrane-based electromechanical system, in which the spring constant of the mechanical resonator can be dynamically controlled via piezoelectric actuation. The degenerate parametric amplifier is studied in this configuration. We observe the splitting of mechanical mode in the response spectra of a phase-sensitive parametric amplifier. In addition, we demonstrate that the quality factor Q of the membrane oscillator can be significantly enhanced by more than two orders of magnitude due to the coherent amplification, reaching an effective Q factor of ∼3 × 108 at room temperature. The nonlinear effect on the parametric amplification is also investigated, as well as the thermomechanical noise squeezing. This system offers the possibility to integrate electrical, optical and mechanical degrees of freedom without compromising the exceptional material properties of SiN membranes, and can be a useful platform for studying cavity optoelectromechanics.

  10. Block Textured a-Si:H Solar Cell

    Seung Jae Moon

    2014-01-01

    Full Text Available A series of etching experiments on light trapping structure have been carried out by glass etching. The block structure provides long light traveling path and a constant distance between the cathode and anode electrodes regardless of the block height, which results in higher efficiency of the block textured solar cell. In terms of etching profile of the glass substrate, the addition of NH4F resulted in the smooth and clean etching profile, and the steep slope of the block was obtained by optimizing the composition of etching solution. For a higher HF concentration, a more graded slope was obtained and the addition of HNO3 and NH4F provided steep slope and clean etching profile. The effects of the block textured glass were verified by a comparison of the solar cell efficiency. For the textured solar cell, the surface was much rougher than that of the plain glass, which also contributes to the improvement of the efficiency. We accomplished block shaped light trapping structure for the first time by wet etching of the glass substrate, which enables the high efficiency thin film solar cell with the aid of the good step coverage deposition.

  11. New fundamental defects in a-SiO2

    Karna, S.P.; Kurtz, H.A.; Shedd, W.M.; Pugh, R.D.; Singaraju, B.K.

    1999-01-01

    Throughout the three decades of research into radiation-induced degradation of metal-oxide-semiconductor (MOS) devices, investigators understood that point defects in the Si-SiO 2 structure (localized deviations from stoichiometrically pure Si and SiO 2 ) are responsible for many observed anomalies. Basic research in this area has progressed along two tracks: (i) differentiating the anomalies based upon subtle differences in their characteristic behavior, and (ii) precise description of the defects responsible for the anomalous behavior. These two research tracks are complementary since often a discovery in one area provides insight and ultimately leads to discoveries in the other. Here, the atomic structure and spin properties of two previously undescribed amorphous silicon dioxide fundamental point defects have been characterized for the first time by ab initio quantum mechanical calculations. Both defects are electrically neutral trivalent silicon centers in the oxide. One of the defects, the X-center, is determined to have an O 2 Sitriple b ondSi ↑ atomic structure. The other defect, called the Y-center, is found to have an OSi 2 triple b ondSi ↑ structure. Calculated electronic and electrical properties of the new defect centers are consistent with the published characteristics of the oxide switching trap or border trap precursors

  12. A SiQuENC for Solving Physics Problems

    Liao, David

    2018-01-01

    Students often struggle in AP Physics 1 because they have not been previously trained to develop qualitative arguments. Extensive literature on multiple representations and qualitative reasoning provides strategies to address this challenge. Table I presents three examples, including SiQuENC, which I adapted from a strategy promoted by Etkina et…

  13. Dimer-flipping-assisted diffusion on a Si(001) surface

    Zi, J.; Min, B. J.; Lu, Y.; Wang, C. Z.; Ho, K. M.

    2000-01-01

    The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car--Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows

  14. Parametric excitation of a SiN membrane via piezoelectricity

    Wu, Shuhui; Sheng, Jiteng; Zhang, Xiaotian; Wu, Yuelong; Wu, Haibin

    2018-01-01

    We develop a stoichiometric silicon nitride (SiN) membrane-based electromechanical system, in which the spring constant of the mechanical resonator can be dynamically controlled via piezoelectric actuation. The degenerate parametric amplifier is studied in this configuration. We observe the splitting of mechanical mode in the response spectra of a phase-sensitive parametric amplifier. In addition, we demonstrate that the quality factor Q of the membrane oscillator can be significantly enhanced by more than two orders of magnitude due to the coherent amplification, reaching an effective Q factor of ˜3 × 108 at room temperature. The nonlinear effect on the parametric amplification is also investigated, as well as the thermomechanical noise squeezing. This system offers the possibility to integrate electrical, optical and mechanical degrees of freedom without compromising the exceptional material properties of SiN membranes, and can be a useful platform for studying cavity optoelectromechanics.

  15. Feasibility study of a SiC sandwich neutron spectrometer

    Wu, Jian, E-mail: caepwujian@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Lei, Jiarong, E-mail: jiarong_lei@163.com [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Jiang, Yong; Chen, Yu; Rong, Ru; Zou, Dehui; Fan, Xiaoqiang [Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, Sichuan Province (China); Chen, Gang; Li, Li; Bai, Song [Nanjing Electronic Devices Institute, Nanjing 210016 (China)

    2013-04-21

    Semiconductor sandwich neutron spectrometers are suitable for in-pile measurements of fast reactor spectra thanks to their compact and relatively simple design. We have assembled and tested a sandwich neutron spectrometer based on 4H-silicon carbide (4H-SiC) Schottky diodes. The SiC diodes detect neutrons via neutron-induced charged particles (tritons and alpha particles) produced by {sup 6}Li(n,α){sup 3}H reaction. {sup 6}LiF neutron converter layers are deposited on the front surface of Schottky diodes by magnetron sputtering. The responses of SiC diodes to charged particles were investigated with an {sup 241}Am alpha source. A sandwich neutron spectrometer was assembled with two SiC Schottky diodes selected based on the charged-particle-response experimental results. The low-energy neutron response of the sandwich spectrometer was measured in the neutron field of the Chinese Fast Burst Reactor-II (CFBR-II). Spectra of alpha particles and tritons from {sup 6}Li(n,α){sup 3}H reaction were obtained with two well-resolved peaks. The energy resolution of the sum spectrum was 8.8%. The primary experimental results confirmed the 4H-SiC sandwich neutron spectrometer's feasibility. -- Highlights: ► Sandwich neutron spectrometer employing 4H-SiC as a detecting material has been developed for the first time. ► {sup 6}LiF neutron converter has been deposited on the surface of 4H-SiC Schottky diode. ► Preliminary testing results obtained with the 4H-SiC sandwich neutron spectrometer are presented.

  16. Lattice dynamics of a- Si3N4

    Schulz, P.A.B.; Silva, C.E.T.G. da

    1984-01-01

    We introduce a model for the lattice dynamics of SI 3 N 4 in its amorphous phase. This model is based on a Born hamiltonian, solved in the Bethe lattice approximation. We included the local vicinity until third nearest neighbours, building up the central cluster. (M.W.O.) [pt

  17. A SiQuENC for solving physics problems

    Liao, David

    2018-04-01

    Students often struggle in AP Physics 1 because they have not been previously trained to develop qualitative arguments. Extensive literature on multiple representations and qualitative reasoning provides strategies to address this challenge. Table I presents three examples, including SiQuENC, which I adapted from a strategy promoted by Etkina et al. To remind students that they can use qualitative reasoning (e.g., arguing from proportionalities), rather than relying only on algebra, I replaced "Solve" with "Analyze." I added a "Communicate" step to guide planning of written responses to AP Physics 1 and 2 questions. To perform this step, draw a circled number around each key point identified in figures, equations, and sentence fragments. Then, convert numbered points into sentences.

  18. Laser annealing of sputter-deposited a-SiC and a-SiCxNy films

    Administrator

    Plasmas and Processes Laboratory, Technological Institute of Aeronautics, SJ dos Campos, Brazil. †Institute for Advanced Studies, .... Blum T, Dresler B, St Kabner and Hoffman M 1999 Surf. Coat. Technol. 116–119 1024. Costa A K and Camargo S S 2003 Surf. Coat. Technol. 163–164. 176. Czubatyj W et al 1991 J. Vac.

  19. Stabilized efficiency of stacked a-Si solar cell; Sekisogata a-Si taiyo denchi no anteika koritsu

    Takahisa, K; Kojima, T; Nakamura, K; Koyanagi, T; Yanagisawa, T [Electrotechnical Laboratory, Tsukuba (Japan)

    1997-11-25

    Different types of tests combining light and temperature were carried out in a laboratory on predicting long-term performance of stacked amorphous silicon solar cells. Cell terminals were left open, xenon was used as an irradiation light source, and cell temperature was controlled within {+-} 2 degC of the setting. The result of the experiment may be summarized as follows: with regard to the deterioration characteristics, the speed in which the efficiency changes reached a maximum within 10 hours, and thereafter the change has slowed down gradually in the case of temperature at 50 degC; in the case of 25 degC, the maximization is reached between 500 and 1000 hours; the stabilization efficiency turns out to be a pessimistic value according to the saturated value derived from an experimental expression, hence the value would have to be expressed by specifying cell temperatures, light intensities and elapsed time; the minimum value of seasonal variation may be estimated at about 85% as a pessimistic value; for recovery characteristics, the saturated value for the recovery tends to become lower as the lower the value immediately before the recovery; and if the light intensity is varied, the deterioration characteristic shifts to that at an individual light intensity. 4 refs., 11 figs., 2 tabs.

  20. Laser annealing of sputter-deposited a-SiC and a-SiCxNy films

    Author Affiliations. M A Fraga1 M Massi1 I C Oliveira1 F D Origo2 W Miyakawa2. Plasmas and Processes Laboratory, Technological Institute of Aeronautics, SJ dos Campos, Brazil; Institute for Advanced Studies, SJ dos Campos, Brazil ...

  1. Implementation of a Comprehensive On-Line Closed-Loop Diagnostic System for Roll-to-Roll Amorphous Silicon Solar Cell Production: Phase I Annual Report, 23 April 2003--31 August 2003

    Ellison, T.

    2004-08-01

    This subcontract report describes how Energy Conversion Devices, Inc., has developed and built 7 generations of roll-to-roll amorphous silicon PV production equipment. In the ECD/United Solar production process, we deposit about a 1-mm-thick, 12-layer coating consisting of a metal/oxide backreflector, a 9-layer a-Si/a-SiGe alloy triple-junction solar cell, and top transparent conductive oxide coating onto 125-mm-thick, 35.5-cm-wide stainless-steel webs in a series of three roll-to-roll deposition machines. In the PV Manufacturing R&D 6 program, ECD is building upon these accomplishments to enhance the operation of the present production machine, and lay the foundation for improvements in the next-generation machine. ECD has completed the Phase I work for the first two Tasks, and will complete the Phase I work for the second two tasks within the next two months. In the following report, we summarize the Phase I work in each of these tasks. We have involved United Solar production personnel in each of these Tasks. This is important for two reasons: First, the collaboration of ECD and United Solar personnel keeps the projects responsive to the developing needs at United Solar; and most of the tasks affect operations and consequently need the support of United Solar production and QA/QC managers. In the process we have developed a good working relationship between the production personnel, whose mantra is''change nothing,'' and the R&D personnel, who mantra is''change everything.''

  2. A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

    Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

    2015-07-16

    The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

  3. Scale-up issues of CIGS thin film PV modules

    Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, FL 32922 (United States)

    2011-01-15

    Photovoltaics cost has been declining following a 70% learning curve. Now the challenge is to bring down the cost of solar electricity to make it competitive with conventional sources within the next decade. In the long run, the module efficiencies tend to reach 80% of the champion cell efficiencies. Using a semiempirical methodology, it has been shown earlier that while the triple junction a-Si:H thin film technology is competitive, CIGS and CdTe thin film module technologies are highly competitive and presently offer the best approach for significantly exceeding the cost/performance levels of standard and non-standard crystalline Si PV technologies. Since 2006, the production of thin film solar cell in the U.S. has surpassed that of c-Si. At present, the production of CIGS PV modules lags considerably behind that of CdTe PV modules. This is mainly because of its complexity. Scale-up issues related to various CIGS preparation technologies such as co-evaporation, metallic precursor deposition by magnetron sputtering and non-vacuum techniques such as ink-jet printing, electroplating or doctor-blade technology followed by their selenization/sulfurization are discussed so as to assist the CIGS technology to attain its full potential. Besides the welcome announcements of large volume production, it is essential to achieve the production cost below $1/Wp in the near term and attain production speeds comparable to CdTe production speeds. Comparable production speeds are expected to be achieved within the next decade. This will enable reduction of CIGS module production costs to {proportional_to}65 cents /Wp that would be comparable to the CdTe module projected production cost. Additionally CIGS will have a higher efficiency premium. (author)

  4. BPS dynamics of the triple (p,q) string junction

    Rey, S.-J.; Yee, J.-T.

    1998-01-01

    We study the dynamics of the triple junction of (p,q) strings in type IIB string theory. We probe the tension and mass density of (p,q) strings by studying harmonic fluctuations of the triple junction. We show that they agree perfectly with the BPS formula provided a suitable geometric interpretation of the junction is given. We provide a precise statement of the BPS limit and force-balance property. At weak coupling and sufficiently dense limit, we argue that a (p,q) string embedded in the string network is a 'wiggly string', whose low-energy dynamics can be described via a renormalization group evolved, smooth effective non-relativistic string. We also suggest the possibility that, upon type IIB strings being promoted to the M-theory membrane, there can exist 'evanescent' bound-states at the triple junction in the continuum. (orig.)

  5. Dielectric effect on electric fields in the vicinity of the metal–vacuum–dielectric junction

    Chung, M.S.; Mayer, A.; Miskovsky, N.M.; Weiss, B.L.; Cutler, P.H.

    2013-01-01

    The dielectric effect was theoretically investigated in order to describe the electric field in the vicinity of a junction of a metal, dielectric, and vacuum. The assumption of two-dimensional symmetry of the junction leads to a simple analytic form and to a systematic numerical calculation for the field. The electric field obtained for the triple junction was found to be enhanced or reduced according to a certain criterion determined by the contact angles and dielectric constant. Further numerical calculations of the dielectric effect show that an electric field can experience a larger enhancement or reduction for a quadruple junction than that achieved for the triple junction. It was also found that even though it changes slowly in comparison with the shape effect, the dielectric effect was noticeably large over the entire range of the shape change. - Highlights: ► This work explains how a very strong electric field can be produced due to the dielectric in the vicinity of metal–dielectric contact. ► This work deals with configurations which enhance electric fields using the dielectric effect. The configuration is a type of junction at which metal, vacuum and dielectric meet. ► This work suggests the criterion to determine whether field enhancement occurs or not in the triple junction of metal, vacuum and dielectric. ► This work suggests that a quadruple junction is more effective in enhancing the electric field than a triple junction. The quadruple junction is formed by an additional vacuum portion to the triple junction. ► This work suggests that a triple junction can be a breakthrough candidate for a cold electron source

  6. Interdigitated Back-Surface-Contact Solar Cell Modeling Using Silvaco Atlas

    2015-06-01

    and Gallium Arsenide, and triple -junction cells with Indium Gallium Phosphide, Gallium Arsenide, and Germanium. Work was also done by Fotis [4] on...output power at various points on the IV curve, from [15]. ............................18 Figure 15. IV curve with the MPP. The orange area is...53 Figure 35. Simulation results of cell power output at maximum power point for varying bulk thicknesses

  7. Quadruple-Junction Thin-Film Silicon-Based Solar Cells

    Si, F.T.

    2017-01-01

    The direct utilization of sunlight is a critical energy source in a sustainable future. One of the options is to convert the solar energy into electricity using thin-film silicon-based solar cells (TFSSCs). Solar cells in a triple-junction configuration have exhibited the highest energy conversion

  8. compaction and porosity based pore pressure prediction in the

    Home

    The Tertiary Niger Delta is situated in the Gulf of Guinea in West Africa (Fig.1). It is located at the intersection of the Benue Trough and the South Atlantic Ocean where a triple junction ... turbidity fans deposited in deeper marine settings.

  9. A variational approach to the modelling of grooving in a three-dimensional setting

    Hackl, K.; Fischer, F. D.; Svoboda, Jiří

    2017-01-01

    Roč. 129, MAY (2017), s. 331-342 ISSN 1359-6454 R&D Projects: GA ČR(CZ) GA15-06390S Institutional support: RVO:68081723 Keywords : surfaces * diffusion * thermodynamics * kinetics * triple junction Subject RIV: BJ - Thermodynamics OBOR OECD: Thermodynamics Impact factor: 5.301, year: 2016

  10. Basic characteristics of the a-SiOC:H thin films prepared by PE CVD

    Vaněk, J.; Čech, V.; Přikryl, R.; Zemek, Josef; Peřina, Vratislav

    2004-01-01

    Roč. 54, č. 9 (2004), C937-942 ISSN 0011-4626. [Proceedings of the Symposium on Plasma and Technology /21./. Praha, 14.06.2004-17.06.2004] R&D Projects: GA AV ČR KSK1010104 Keywords : vinyltriethoxysilane * thin film * PECVD Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.292, year: 2004

  11. Scalable nanostructuring on polymer by a SiC stamp: optical and wetting effects

    Argyraki, Aikaterini; Lu, Weifang; Petersen, Paul Michael

    2015-01-01

    through a process flow that involved hot embossing and galvanization. The resulted polymer structures have similar average height and exhibit more rounded edges than the initial SiC nanostructures. The polymer surface becomes antireflective and hydrophobic after nanostructuring. The contact angle changes......%). The optical measurements were performed with an integrating sphere and a spectrometer. The contact angles were measured with a drop shape analyzer. The nanostructures were characterized with scanning electron microscopy....

  12. Impact of organic overlayers on a-Si:H/c-Si surface potential

    Seif, Johannes P.

    2017-04-11

    Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance.

  13. Characterization of a DAQ system for the readout of a SiPM based shashlik calorimeter

    Berra, A.; Bonvicini, V.; Bosisio, L.; Lietti, D.; Penzo, A.; Prest, M.; Rabaioli, S.; Rashevskaya, I.; Vallazza, E.

    2014-01-01

    Silicon PhotoMultipliers (SiPMs) are a recently developed type of silicon photodetector characterized by high gain and insensitivity to magnetic fields, which make them a suitable detector for the next generation high energy and space physics experiments. This paper presents the performance of a readout system for SiPMs based on the MAROC3 ASIC. The ASIC consists of 64 channels working in parallel, each one with a variable gain pre-amplifier, a tunable slow shaper with a sample and hold circuit for the analog readout and a tunable fast shaper for the digital one. In the tests described in this paper, only the analog part of the ASIC has been used. A frontend board based on the MAROC3 ASIC has been tested at CERN coupled to a scintillator-lead shashlik calorimeter, readout with 36 large area SiPMs. The performance of the system has been characterized in terms of linearity and energy resolution on the CERN PS-T9 and SPS-H2 beamlines, using different configurations of the ASIC parameters

  14. Real field mission profile oriented design of a SiC-based PV-inverter application

    Sintamarean, Nicolae Christian; Blaabjerg, Frede; Wang, Huai

    2013-01-01

    This paper introduces a real field mission profile oriented design tool for the new generation of grid connected PV-inverters applications based on SiC-devices. The proposed design tool consists of a grid connected PV-inverter model, an ElectroThermal model, a converter safe operating area (SOA...... Zth_H in order to perform in a safe mode for the whole operating range. Furthermore, the proposed design tool considers the mission profile (the measured solar irradiance and ambient temperature) from the real field where the converter will operate. Thus, a realistic loading of the converter devices......) model, a mission profile model and an the evaluation block. The PV-system model involves a three level bipolar switch neutral point clamped (3L-BS NPC) inverter connected to the three phase grid through a LCL-filter. Moreover, the SOA model calculates the required converter heatsink thermal impedance...

  15. Comparison of ghosting effects for three commercial a-Si EPIDs

    McDermott, L. N.; Nijsten, S. M. J. J. G.; Sonke, J.-J.; Partridge, M.; Herk, M. van; Mijnheer, B. J.

    2006-01-01

    Many studies have reported dosimetric characteristics of amorphous silicon electronic portal imaging devices (EPIDs). Some studies ascribed a non-linear signal to gain ghosting and image lag. Other reports, however, state the effect is negligible. This study compares the signal-to-monitor unit (MU) ratio for three different brands of EPID systems. The signal was measured for a wide range of monitor units (5-1000), dose-rates, and beam energies. All EPIDs exhibited a relative under-response for beams of few MUs; giving 4 to 10% lower signal-to-MU ratios relative to that of 1000 MUs. This under-response is consistent with ghosting effects due to charge trapping

  16. Study of thermal treated a-Si implanted with Er and O ions

    Plugaru, R; Piqueras, J; Tate, T J

    2002-01-01

    Visible luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O and subsequently annealed in nitrogen has been investigated by cathodoluminescence (CL) in a scanning electron microscope. Co-implanted samples show a more intense luminescence, which is revealed by annealing at lower temperatures than the samples implanted only with erbium. Thermal treatments cause the formation of erbium oxide as well as Er-Si complexes or precipitates. Violet-blue luminescence has been found from CL images and spectra to be related to Er-Si precipitates. Emission in the green-red range is attributed to oxide species.

  17. Photoconductivity of Selenium and Sulphur Doped a-Si:H thin Films

    SHARMA, Sanjeev Kumar; GUPTA, Himanshu

    2014-01-01

    The accurate estimation of tree biomass is crucial for the efficient management of forest resources. In this study, we used a subsampling method for unbiased estimates of above-ground tree biomass. The method consists of 2 stages: the first stage consists of randomized branch sampling (RBS) and the second stage uses importance sampling (IS). RBS is used to select a path from the butt of an object branch to a terminal segment. IS is used for selecting a disk that produces unbiased estimates of...

  18. Optical spectroscopy of the density of gap states in ETP-deposited a-Si:H

    Willekens, J.; Brinza, M.; Güngör, T.; Adriaenssens, G.J.; Nesladek, M.; Kessels, W.M.M.; Smets, A.H.M.; Sanden, van de M.C.M.

    2004-01-01

    The distribution and density of localized states in the band gap of hydrogenated amorphous silicon, as deposited by the expanding thermal plasma technique, were studied by means of a combined use of the constant photocurrent method (CPM), photothermal deflection spectroscopy (PDS) and time-of-flight

  19. Toyota's innovative concept for a SI direct fuel injection system

    Matsumura, E.; Kanda, M.; Hattori, F. [Toyota Motor Corporation, Shizuoka (Japan)

    2013-08-01

    To reduce environmental footprint of vehicle, demands have been intensifying for gasoline engines with lower fuel consumption, improved power performance, and lower emissions. The adoption of direct injection technology is rapidly expanding because it is an efficient way to achieve these targets. Originally, gasoline direct injection engines were designed to allow stratified lean combustion, which has a significant fuel consumption reduction effect. However, as exhaust gas emission regulations have become more stringent, the combustion strategy of most gasoline direct injection engines was changed to homogeneous stoichiometric combustion. Stratified lean combustion can nevertheless be used during catalyst heat up phase to fasten it and reduce pollutant emissions. In addition, exhaust gas recirculation (EGR), widely used in Diesel combustion, can also be used in gasoline engine to further reduce fuel consumption by reducing fuel requirement to maintain stoichiometric combustion. Regulations covering the emission of particulate matter (PM), which is an issue of direct injection, have also been strengthened, such as by the introduction of particle number restrictions in Europe. Based on this background, this article introduces the new Toyota direct injection (D-4S) concept that was developed to respond to such requirements. In this concept, combustion speed and air-fuel mixture homogeneity were improved by active usage of spray jets to strengthen the in-cylinder flow. The PM number and oil dilution were significantly reduced by usage of a thin fan-shaped spray formed by a slit nozzle. In addition, this developed slit nozzle has high potential to avoid deposit build-up. Moreover, fast catalyst warming up performance was secured to achieve a low level of emissions compatible with the super ultra low emission vehicle (SULEV) standards in North America. (orig.)

  20. Distribution of implanted hydrogen in amorphous silicon dioxide a-SiO2

    Mokrushin, A.D.; Agafonov, Yu.A.; Zinenko, V.I.; Pustovit, A.N.

    2004-01-01

    Hydrogen SIMS distributions are measured in quartz glasses implanted by different doses of H 2 + ions with energy 40 keV. There are two features in distributions: the availability of intensive peak close to the surface and near-constant dependence at large depth up to ions range. These peculiarities are perhaps attributable to the radiation induced diffusion of hydrogen atoms back to the surface via which ions are implanted [ru

  1. Geant4 simulation of a scintillator-lead shashlik calorimeter with a SiPM readout

    Berra, A.

    2011-01-01

    Shashlik calorimeters are sampling calorimeters which, in the last 20 years, have been used in many high-energy experiments: relatively cheap, they can be easily segmented and built in a large variety of geometries and they guarantee energy resolutions comparable to the ones achievable with homogeneous calorimeters. This article presents the complete optical simulation of a prototype of a scintillator lead shashlik calorimeter with silicon photomultipliers readout, characterized in terms of linearity, energy and spatial resolution. The simulation has been used to explain and validate the experimental data, obtained on the PS-T9 beamline at CERN, using electrons in the 1-7 GeV energy range.

  2. Transport and stability studies on high band gap a-Si:H films ...

    which are responsible for light-induced degradation by strong Si–Si bonds. This results in ... The films reported have very high deposition rate (4–5 Å/s) compared to that reported .... Room temperature dark conductivity of the SC films ranges from ~10−10 to ... dilution increases σd considerably with smaller activation energy.

  3. Monolithic two-terminal hybrid a-Si:H/CIGS tandem cells

    Blanker, J.; Vroon, Z.; Zeman, M.; Smets, A.

    2016-01-01

    Copper-indium-gallium-di-selenide (CIGS) is the present record holder in lab-scale thin-film photovoltaics (TFPV). One of the problems of this PV technology is the scarcity of indium. Multi-junction solar cells allow better spectral utilization of the light spectrum, while the required current

  4. A SiGe Quadrature Pulse Modulator for Superconducting Qubit State Manipulation

    Kwende, Randy; Bardin, Joseph

    Manipulation of the quantum states of microwave superconducting qubits typically requires the generation of coherent modulated microwave pulses. While many off-the-shelf instruments are capable of generating such pulses, a more integrated approach is likely required if fault-tolerant quantum computing architectures are to be implemented. In this work, we present progress towards a pulse generator specifically designed to drive superconducing qubits. The device is implemented in a commercial silicon process and has been designed with energy-efficiency and scalability in mind. Pulse generation is carried out using a unique approach in which modulation is applied directly to the in-phase and quadrature components of a carrier signal in the 1-10 GHz frequency range through a unique digital-analog conversion process designed specifically for this application. The prototype pulse generator can be digitally programmed and supports sequencing of pulses with independent amplitude and phase waveforms. These amplitude and phase waveforms can be digitally programmed through a serial programming interface. Detailed performance of the pulse generator at room temperature and 4 K will be presented.

  5. Optical Properties of a-SiC:H Films Deposited by Glowdischarge Methods

    Lusitra Munisa

    2003-12-01

    Full Text Available he optical properties of amorphous silicon carbon films deposited by glowdischarge method have been studied using ultra violet-visible (uv-vis spectroscopy. The refractive index was calculated by Swanepoel’s formula using transmission data then followed by numerical simulation. The films density tends to decrease with increasing carbon content. The widening of the optical gap by increasing carbon content indicates the enhancement of film’s transparence. Both real and imaginary parts of the dielectric constant show variation in magnitude as the carbon content increase.

  6. Temperature dependence of radiation induced defect creation in a-SiO2

    Devine, R.A.B.; Grouillet, A.; Berlivet, J.Y.

    1988-01-01

    The efficiency of oxygen vacancy defect creation in samples of amorphous SiO 2 subjected to ultraviolet laser or ionizing particle radiation (energetic H + ions) has been measured as a function of sample temperature during irradiation. For the case of laser radiation (E photon ≅ 5 eV) we find that vacancy centers are only created when the irradiation temperature is above 150 K. The efficiency of peroxy radical defect creation observed after post irradiation annealing is consistent with the behaviour of the oxygen vacancy creation efficiency. In samples with energetic protons, the opposite behaviour is observed and one finds that defect creation is enhanced as the implantation temperature is lowered. Possible physical mechanisms controlling the defect creation efficiency as a function of sample temperature and radiation are discussed. (orig.)

  7. Micro-area Auger analysis of a SiC/Ti fibre composite

    Zironi, E. P.; Poppa, H.

    1981-01-01

    Micro-area Auger electron spectroscopy with a spatial resolution of less than 50 nm has been used to study the concentration of elements across the reaction zone of a W-reinforced SiC fiber in a titanium matrix. Although the elemental concentrations obtained by this technique are affected by the reaction zone morphology to a greater extent than in the case of X-ray microprobe analysis, the proposed technique has the advantage of a much higher spatial resolution and avoids the problems of bulk averaging that characterize the X-ray technique.

  8. High growth rate of a-SiC:H films using ethane carbon source by HW ...

    in a wide variety of applications such as solar cells (Han et al. 1989) .... controller. Deposition was carried out for desired amount of time and films were allowed to cool to room temperature in ... The charge correction was done by applying sil-.

  9. Microstructure of a SiC/Ti-15-3 composite

    Lerch, B. A.; Hull, D. R.; Leonhardt, T. A.

    1990-01-01

    A continuous SiC-fiber-reinforced titanium (Ti-15V-3Cr-3Sn-3A1) composite was metallographically examined. Several methods for examining composite materials were investigated and documented. Polishing techniques for this material are described. An interference layering method was developed to reveal the structure of the fiber, the reaction zone, and various phases within the matrix. Microprobe and TEM analyses were performed on the fiber-matrix interface. Detailed descriptions of the fiber distribution and the microstructure of the fiber and matrix are presented.

  10. As-received microstructure of a SiC/Ti-15-3 composite

    Lerch, Bradley A.; Hull, David R.; Leonhardt, Todd A.

    1988-01-01

    A silicon carbide fiber reinforced titanium (Ti-15V-3Cr-3Sn-3Al) composite is metallographically examined. Several methods for examining composite materials are investigated and documented. Polishing techniques for this material are described. An interference layering method is developed to reveal the structure of the fiber, the reaction zone, and various phases within the matrix. Microprobe and transmission electron microscope (TEM) analyses are performed on the fiber/matrix interface. A detailed description of the fiber distribution as well as the microstructure of the fiber and matrix are presented.

  11. Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

    Barhdadi, A.; Karbal, S.; M'Gafad, N.; Benmakhlouf, A.; Chafik El Idrissi, M.; Aka, B.M.

    2006-08-01

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides some experimental data resulting from the optical characterization of hydrogenated amorphous silicon thin films grown by this deposition technique. Experiments have been performed on both as-deposited layers and thermal annealed ones. (author) [fr

  12. Deposition of a-SiC:H using organosilanes in an argon/hydrogen plasma

    Maya, L.

    1993-01-01

    Selected organosilanes were examined as precursors for the deposition of amorphous hydrogenated silicon carbide in an argon/hydrogen plasma. Effect of process variables on the quality of the films was established by means of FTIR, Auger spectroscopy, XPS, XRD, chemical analysis, and weight losses upon pyrolysis. For a given power level there is a limiting feeding rate of the precursor under which operation of the system is dominated by thermodynamics and leads to high quality silicon carbide films that are nearly stoichiometric and low in hydrogen. Beyond that limit, carbosilane polymer formation and excessive hydrogen incorporation takes place. The hydrogen content of the plasma affects the deposition rate and the hydrogen content of the film. In the thermodynamically dominated regime the nature of the precursor has no effect on the quality of the film, it affects only the relative utilization efficiency

  13. RBS/channeling study of buried Ge quantum dots grown in a Si layer

    Fonseca, A.; Alves, E.; Barradas, N.P.; Leitao, J.P.; Sobolev, N.A.; Carmo, M.C.; Nikiforov, A.I.; Presting, H.

    2006-01-01

    In last decades we have been assisting to a crescent importance of low dimensional systems for the fabrication of nano- and opto-electronic devices. Ge quantum dots (QDs) are well suited for fulfilling these requirements. In this work we present and discuss Ge/Si multilayer and single layer samples grown by molecular beam epitaxy. RBS/channeling results reveal the evidence for the presence of Ge QD for the thickest (with 1 ML of SiO 2 and 0.9 nm of Ge) single layer sample. On the other hand Ge atoms are fully substitutional incorporated in the Si matrix for the thinner sample, excluding the formation of Ge QDs. Multilayer sample shows an angular deviation of the Ge curve (-0.48 o ) with respect to the Si ones, indicating the compressive strain of the films. A tetragonal distortion of (1.78 ± 0.19%) was calculated

  14. A novel growth mode of alkane films on a SiO2 surface

    Mo, H.; Taub, H.; Volkmann, U.G.

    2003-01-01

    on the SiO2 surface with the long-axis of the C32 molecules oriented parallel to the interface followed by a C32 monolayer with the long-axis perpendicular to it. Finally, preferentially oriented bulk particles nucleate having two different crystal structures. This growth model differs from that found...... previously for shorter alkanes deposited from the vapor phase onto solid surfaces....

  15. Short-Circuit Degradation of 10-kV 10-A SiC MOSFET

    Eni, Emanuel-Petre; Beczkowski, Szymon; Munk-Nielsen, Stig

    2017-01-01

    The short-circuit behavior of power devices is highly relevant for converter design and fault protection. In this work, the degradation during short-circuit of a 10 kV 10 A 4H-SiC MOSFET is investigated at 6 kV DC-link voltage. The study aims to present the behavior of the device during short-circuit...... transients as it sustains increasing short-circuit pulses during its life-time. As the short-circuit pulse length increases, degradation of the device can be observed in periodically performed characterizations. The initial degradation seems to be associated with the channel region, and continuous stressing...

  16. LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr Calorimeter

    Dressnandt, N; Rescia, S; Vernon, E

    2009-01-01

    We have designed and fabricated a very low noise preamplifier and shaper to replace the existing ATLAS Liquid Argon readout for use at the Large Hadron Collider upgrade (sLHC). IBM’s 8WL 130nm SiGe process was chosen for it’s radiation tolerance, low noise bipolar NPN devices, wide voltage rand and potential use in other sLHC detector subsystems. Although the requirements for the final design can not be set at this time, the prototype was designed to accommodate a 16 bit dynamic range. This was accomplished by using a single stage, low noise, wide dynamic range preamp followed by a dual range shaper. The low noise of the preamp is made possible by the low base spreading resistance of the Silicon Germanium NPN bipolar transistors. The relatively high voltage rating of the NPN transistors is exploited to allow a gain of 650V/A in the preamplifier which eases the input voltage noise requirement on the shaper. Each shaper stage is designed as a cascaded differential operational amplifier doublet with a common...

  17. LAPAS: A SiGe Front End Prototype for the Upgraded ATLAS LAr

    Rescia, S; Newcomer, F M; Dressnandt, N

    2009-01-01

    We have designed and fabricated a very low noise preamplifier and shaper with a (RC)2 – CR response to replace the existing ATLAS Liquid Argon readout for use at SLHC. IBM’s 8WL 130nm SiGe process was chosen for its radiation tolerance wide voltage range and potential for use in other LHC detector subsystems. The required dynamic range of 15 bits is accomplished by utilization of a single stage, low noise, wide dynamic range preamp connected to a dual range shaper. The low noise of the preamp (~.01nA / √Hz) is achieved by utilizing the process Silicon Germanium bipolar transistors. The relatively high voltage rating of the npn transistors is exploited to allow a gain of 650V/A. With this gain the equivalent input voltage noise requirement on the shaper to about 2.2nV/ √Hz. Each shaper stage is designed as a cascaded differential op amp doublet with a common mode operating point regulated by an internal feedback loop. The shaper outputs are designed to be compatible with the 130nm CMOS ADC being develo...

  18. A Mossbauer study of Kr incorporations in sputtered a-Si films

    Rosu, M.F; Niesen, L; van Veen, A.; Sloof, W.G.

    1996-01-01

    Krypton atoms incorporated in sputtered a-silicon films are investigated by means of Kr-83 Mosssbauer spectroscopy. The hyperfine parameters of the (RbI)-Rb-83 source were determined by taking a spectrum against solid krypton. Mossbauer spectra were taken for films containing krypton concentrations

  19. A SiPM based real time dosimeter for radiotherapic beams

    Berra, A., E-mail: alessandro.berra@gmail.it [Università degli Studi dell' Insubria e INFN sezione di Milano Bicocca, Via Valleggio, 11 22100 Como (Italy); Conti, V. [Ospedale Sant' Anna, Servizio di Fisica Sanitaria, Como (Italy); Lietti, D.; Milan, L.; Novati, C. [Università degli Studi dell' Insubria e INFN sezione di Milano Bicocca, Via Valleggio, 11 22100 Como (Italy); Ostinelli, A. [Ospedale Sant' Anna, Servizio di Fisica Sanitaria, Como (Italy); Prest, M.; Romanó, C. [Università degli Studi dell' Insubria e INFN sezione di Milano Bicocca, Via Valleggio, 11 22100 Como (Italy); Vallazza, E. [INFN sezione di Trieste (Italy)

    2015-02-11

    This paper describes the development of a scintillator dosimeter prototype for radiotherapic applications based on plastic scintillating fibers readout by Silicon PhotoMultipliers. The dosimeter, whose probes are water equivalent, could be used for quality control measurements, beam characterization and in vivo dosimetry, allowing a real time measurement of the dose spatial distribution. This paper describes the preliminary percentual depth dose scan performed with clinical 6 and 18 MV photon beams, comparing the results with a reference curve. The measurements were performed using a Varian Clinac iX linear accelerator at the Radiotherapy Department of the St. Anna Hospital in Como (IT). The prototype has given promising results, allowing real time measurements of relative dose without applying any correction factors.

  20. Ni3Si(Al)/a-SiOx core shell nanoparticles: characterization, shell formation, and stability

    Pigozzi, G.; Mukherji, D.; Gilles, R.; Barbier, B.; Kostorz, G.

    2006-08-01

    We have used an electrochemical selective phase dissolution method to extract nanoprecipitates of the Ni3Si-type intermetallic phase from two-phase Ni-Si and Ni-Si-Al alloys by dissolving the matrix phase. The extracted nanoparticles are characterized by transmission electron microscopy, energy-dispersive x-ray spectrometry, x-ray powder diffraction, and electron powder diffraction. It is found that the Ni3Si-type nanoparticles have a core-shell structure. The core maintains the size, the shape, and the crystal structure of the precipitates that existed in the bulk alloys, while the shell is an amorphous phase, containing only Si and O (SiOx). The shell forms around the precipitates during the extraction process. After annealing the nanoparticles in nitrogen at 700 °C, the tridymite phase recrystallizes within the shell, which remains partially amorphous. In contrast, on annealing in air at 1000 °C, no changes in the composition or the structure of the nanoparticles occur. It is suggested that the shell forms after dealloying of the matrix phase, where Si atoms, the main constituents of the shell, migrate to the surface of the precipitates.

  1. Isotopic effects in vibrational relaxation dynamics of H on a Si(100) surface

    Bouakline, F.; Lorenz, U.; Melani, G.; Paramonov, G. K.; Saalfrank, P.

    2017-10-01

    In a recent paper [U. Lorenz and P. Saalfrank, Chem. Phys. 482, 69 (2017)], we proposed a robust scheme to set up a system-bath model Hamiltonian, describing the coupling of adsorbate vibrations (system) to surface phonons (bath), from first principles. The method is based on an embedded cluster approach, using orthogonal coordinates for system and bath modes, and an anharmonic phononic expansion of the system-bath interaction up to second order. In this contribution, we use this model Hamiltonian to calculate vibrational relaxation rates of H-Si and D-Si bending modes, coupled to a fully H(D)-covered Si(100)-( 2 × 1 ) surface, at zero temperature. The D-Si bending mode has an anharmonic frequency lying inside the bath frequency spectrum, whereas the H-Si bending mode frequency is outside the bath Debye band. Therefore, in the present calculations, we only take into account one-phonon system-bath couplings for the D-Si system and both one- and two-phonon interaction terms in the case of H-Si. The computation of vibrational lifetimes is performed with two different approaches, namely, Fermi's golden rule, and a generalized Bixon-Jortner model built in a restricted vibrational space of the adsorbate-surface zeroth-order Hamiltonian. For D-Si, the Bixon-Jortner Hamiltonian can be solved by exact diagonalization, serving as a benchmark, whereas for H-Si, an iterative scheme based on the recursive residue generation method is applied, with excellent convergence properties. We found that the lifetimes obtained with perturbation theory, albeit having almost the same order of magnitude—a few hundred fs for D-Si and a couple of ps for H-Si—, are strongly dependent on the discretized numerical representation of the bath spectral density. On the other hand, the Bixon-Jortner model is free of such numerical deficiencies, therefore providing better estimates of vibrational relaxation rates, at a very low computational cost. The results obtained with this model clearly show a net exponential decay of the time-dependent survival probability for the H-Si initial vibrational state, allowing an easy extraction of the bending mode "lifetime." This is in contrast with the D-Si system, whose survival probability exhibits a non-monotonic decay, making it difficult to define such a lifetime. This different behavior of the vibrational decay is rationalized in terms of the power spectrum of the adsorbate-surface system. In the case of D-Si, it consists of several, non-uniformly distributed peaks around the bending mode frequency, whereas the H-Si spectrum exhibits a single Lorentzian lineshape, whose width corresponds to the calculated lifetime. The present work gives some insight into mechanisms of vibration-phonon coupling at surfaces. It also serves as a benchmark for multidimensional system-bath quantum dynamics, for comparison with approximate schemes such as reduced, open-system density matrix theory (where the bath is traced out and a Liouville-von Neumann equation is solved) or approximate wavefunction methods to solve the combined system-bath Schrödinger equation.

  2. Recent results from a Si/CdTe semiconductor Compton telescope

    Tanaka, Takaaki; Watanabe, Shin; Takeda, Shin'ichiro; Oonuki, Kousuke; Mitani, Takefumi; Nakazawa, Kazuhiro; Takashima, Takeshi; Takahashi, Tadayuki; Tajima, Hiroyasu; Sawamoto, Naoyuki; Fukazawa, Yasushi; Nomachi, Masaharu

    2006-01-01

    We are developing a Compton telescope based on high-resolution Si and CdTe detectors for astrophysical observations in sub-MeV/MeV gamma-ray region. Recently, we constructed a prototype Compton telescope which consists of six layers of double-sided Si strip detectors (DSSDs) and CdTe pixel detectors to demonstrate the basic performance of this new technology. By irradiating the detector with gamma rays from radio isotope sources, we have succeeded in Compton reconstruction of images and spectra. The obtained angular resolution is 3.9 o (FWHM) at 511keV, and the energy resolution is 14keV (FWHM) at the same energy. In addition to the conventional Compton reconstruction, i.e., drawing cones in the sky, we also demonstrated a full reconstruction by tracking Compton recoil electrons using the signals detected in successive Si layers. By irradiating 137 Cs source, we successfully obtained an image and a spectrum of 662keV line emission with this method. As a next step, development of larger DSSDs with a size of 4cmx4cm is under way to improve the effective area of the Compton telescope. We are also developing a new low-noise analog ASIC to handle the increasing number of channels. Initial results from these two new technologies are presented in this paper as well

  3. Impact of organic overlayers on a-Si:H/c-Si surface potential

    Seif, Johannes P.; Niesen, Bjoern; Tomasi, Andrea; Ballif, Christophe; De Wolf, Stefaan

    2017-01-01

    Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance.

  4. FDTD analysis of Aluminum/a-Si:H surface plasmon waveguides

    Lourenço, Paulo; Fantoni, Alessandro; Fernandes, Miguel; Vygranenko, Yuri; Vieira, Manuela

    2018-02-01

    The large majority of surface plasmon resonance based devices use noble metals, namely gold or silver, in their manufacturing process. These metals present low resistivity, which leads to low optical losses in the visible and near infrared spectrum ranges. Gold shows high environmental stability, which is essential for long-term operation, and silver's lower stability can be overcome through the deposition of an alumina layer, for instance. However, their high cost is a limiting factor if the intended target is large scale manufacturing. In this work, it is considered a cost-effective approach through the selection of aluminum as the plasmonic material and hydrogenated amorphous silicon instead of its crystalline counterpart. This surface plasmon resonance device relies on Fano resonance to improve its response to refractive index deviations of the surrounding environment. Fano resonance is highly sensitive to slight changes of the medium, hence the reason we incorporated this interference phenomenon in the proposed device. We report the results obtained when conducting Finite-Difference Time Domain algorithm based simulations on this metal-dielectric-metal structure when the active metal is aluminum, gold and silver. Then, we evaluate their sensitivity, detection accuracy and resolution, and the obtained results for our proposed device show good linearity and similar parameter performance as the ones obtained when using gold or silver as plasmonic materials.

  5. Characterisation of 10 kV 10 A SiC MOSFET

    Eni, Emanuel-Petre; Incau, Bogdan Ioan; Munk-Nielsen, Stig

    2015-01-01

    The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting...

  6. Monitoring indicators in a dismantling; Seguimiento de indicadores en un desmantelamiento. Conocerse a si mismo

    Soto Lanuza, A.

    2013-07-01

    Knowing yourself know the processes (Manual process), knows as the more quantitative possible, as are things (table of indicators), document and manage incidents and finds (integrated system of improvements), will allow us to carry to term two important tasks: the tracking and the continuous improvement of the project.

  7. Development of a SiPM-based PET imaging system for small animals

    Lu, Yanye; Yang, Kun; Zhou, Kedi; Zhang, Qiushi; Pang, Bo; Ren, Qiushi

    2014-01-01

    Advances in small animal positron emission tomography (PET) imaging have been accelerated by many new technologies such as the successful incorporation of silicon photomultiplier (SiPM). In this paper, we have developed a compact, lightweight PET imaging system that is based on SiPM detectors for small animals imaging, which could be integrated into a multi-modality imaging system. This PET imaging system consists of a stationary detector gantry, a motor-controlled animal bed module, electronics modules, and power supply modules. The PET detector, which was designed as a multi-slice circular ring geometry of 27 discrete block detectors, is composed of a cerium doped lutetium–yttrium oxyorthosilicate (LYSO) scintillation crystal and SiPM arrays. The system has a 60 mm transaxial field of view (FOV) and a 26 mm axial FOV. Performance tests (e.g. spatial resolution, energy resolution, and sensitivity) and phantom and animal imaging studies were performed to evaluate the imaging performance of the PET imaging system. The performance tests and animal imaging results demonstrate the feasibility of an animal PET system based on SiPM detectors and indicate that SiPM detectors can be promising photodetectors in animal PET instrumentation development

  8. Experimental investigations of butanol-gasoline blends effects on the combustion process in a SI engine

    Merola, Simona Silvia; Tornatore, Cinzia; Machitto, Luca; Valentino, Gerardo; Corcione, Felice Esposito [Istituto Motori-CNR, Naples (Italy)

    2012-07-01

    Fuel blend of alcohol and conventional hydrocarbon fuels for a spark-ignition engine can increase the fuel octane rating and the power for a given engine displacement and compression ratio. In this work, the influence of butanol addition to gasoline in a port fuel-injection, spark ignition engine was investigated. The experiments were realized in a single cylinder ported fuel injection SI engine with an external boosting device. The optical accessible engine was equipped with the head of commercial SI turbocharged engine with the same geometrical specifications (bore, stroke, compression ratio) as the research engine. The effect on the spark ignition combustion process of 20% and 40% of n-butanol blended in volume with pure gasoline was investigated through cycle resolved visualization. The engine worked at low speed, medium boosting and wide open throttle. Fuel injections both in closed valve and open valve conditions were considered. Comparisons between the parameters related to the flame luminosity and the pressure signals were performed. Butanol blends allowed working in more advanced spark timing without knocking occurrence. The duration of injection for Butanol blends was increased to obtain stoichiometric mixture. In open valve injection condition, the fuel deposits on intake manifold and piston surfaces decreased, allowing a reduction in fuel consumption. BU40 granted the performance levels of gasoline and in open valve injection allowed to minimize the abnormal combustion effects including the emission of ultrafine carbonaceous particles at the exhaust. In-cylinder investigations were correlated to engine out emissions. (orig.)

  9. Mid-infrared materials and devices on a Si platform for optical sensing

    Singh, Vivek; Lin, Pao Tai; Patel, Neil; Lin, Hongtao; Li, Lan; Zou, Yi; Deng, Fei; Ni, Chaoying; Hu, Juejun; Giammarco, James; Soliani, Anna Paola; Zdyrko, Bogdan; Luzinov, Igor; Novak, Spencer; Novak, Jackie; Wachtel, Peter; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kimerling, Lionel C; Agarwal, Anuradha M

    2014-01-01

    In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors. PMID:27877641

  10. Characterization of the a-Si EPID in the unity MR-linac for dosimetric applications

    Torres-Xirau, I.; Olaciregui-Ruiz, I.; Baldvinsson, G.; Mijnheer, B. J.; van der Heide, U. A.; Mans, A.

    2018-01-01

    Electronic portal imaging devices (EPIDs) are frequently used in external beam radiation therapy for dose verification purposes. The aim of this study was to investigate the dose-response characteristics of the EPID in the Unity MR-linac (Elekta AB, Stockholm, Sweden) relevant for dosimetric applications under clinical conditions. EPID images and ionization chamber (IC) measurements were used to study the effects of the magnetic field, the scatter generated in the MR housing reaching the EPID, and inhomogeneous attenuation from the MR housing. Dose linearity and dose rate dependencies were also determined. The magnetic field strength at EPID level did not exceed 10 mT, and dose linearity and dose rate dependencies proved to be comparable to that on a conventional linac. Profiles of fields, delivered with and without the magnetic field, were indistinguishable. The EPID center had an offset of 5.6 cm in the longitudinal direction, compared to the beam central axis, meaning that large fields in this direction will partially fall outside the detector area and not be suitable for verification. Beam attenuation by the MRI scanner and the table is gantry angle dependent, presenting a minimum attenuation of 67% relative to the 90° measurement. Repeatability, observed over two months, was within 0.5% (1 SD). In order to use the EPID for dosimetric applications in the MR-linac, challenges related to the EPID position, scatter from the MR housing, and the inhomogeneous, gantry angle-dependent attenuation of the beam will need to be solved.

  11. A Si IV/O IV Electron Density Diagnostic for the Analysis of IRIS Solar Spectra

    Young, P. R.; Keenan, F. P.; Milligan, R. O.; Peter, H.

    2018-04-01

    Solar spectra of ultraviolet bursts and flare ribbons from the Interface Region Imaging Spectrograph (IRIS) have suggested high electron densities of > {10}12 cm‑3 at transition region temperatures of 0.1 MK, based on large intensity ratios of Si IV λ1402.77 to O IV λ1401.16. In this work, a rare observation of the weak O IV λ1343.51 line is reported from an X-class flare that peaked at 21:41 UT on 2014 October 24. This line is used to develop a theoretical prediction of the Si IV λ1402.77 to O IV λ1401.16 ratio as a function of density that is recommended to be used in the high-density regime. The method makes use of new pressure-dependent ionization fractions that take account of the suppression of dielectronic recombination at high densities. It is applied to two sequences of flare kernel observations from the October 24 flare. The first shows densities that vary between 3× {10}12 and 3× {10}13 cm‑3 over a seven-minute period, while the second location shows stable density values of around 2× {10}12 cm‑3 over a three-minute period.

  12. Progress in the development of a SiC{sub f}/SiC creep test

    Hamilton, M.L.; Lewinsohn, C.A.; Jones, R.H.; Youngblood, G.E.; Garner, F.A. [Pacific Northwest National Lab., Richland, WA (United States); Hecht, S.L.

    1996-10-01

    An effort is now underway to design an experiment that will allow the irradiation creep behavior of SiC{sub f}/SiC composites to be quantified. Numerous difficulties must be overcome to achieve this goal, including determining an appropriate specimen geometry that will fit their radiation volumes available and developing a fabrication procedure for such a specimen. A specimen design has been selected, and development of fabrication methods is proceeding. Thermal and stress analyses are being performed to evaluate the viability of the specimen and to assist with determining the design parameters. A possible alternate type of creep test is also being considered. Progress in each of these areas is described in this report.

  13. Small polaron formation and motion of holes in a-SiO2

    Hughes, R.C.; Emin, D.

    1978-01-01

    X-ray generated holes in SiO 2 are observed to be reduced to low mobility in times of the order of vibrational periods, 10 -12 s. The temperature dependence, electric field dependence and magnitude of this mobility for times up to about 100 ns are consistent with those of hole-like small polarons. The circumstances which favor the occurrence of rapid small polaron formation are a large effective mass (narrow valence band), the presence of the long-range hole-lattice interaction characteristic of an ionic material and the presence of disorder, all of which are found in amorphous SiO 2 . An alternative explanation involving trapping requires an extremely large localized state density and fortuitous temperature and field dependences of the hopping rates

  14. Model for hydrogen isotope backscattering, trapping and depth profiles in C and a-Si

    Cohen, S.A.; McCracken, G.M.

    1979-03-01

    A model of low energy hydrogen trapping and backscattering in carbon and a-silicon is described. Depth profiles are calculated and numerical results presented for various incident angular and energy distributions. The calculations yield a relation between depth profiles and the incident ion energy distribution. The use of this model for tokamak plasma diagnosis is discussed

  15. Determination of the efficiency curve for a Si-Li detector

    Aldape U, F.; Oliver, A.; Montenegro, E.C.

    1986-02-01

    In this work it is carried out a new calibration method for an X-rays detection system for PIXE analysis. This method it bases on the parametric expression introduced by Gallaher and Cipola in which the efficiency curve is obtained adjusting the parameters that they represent the solid angle, the attenuation in the absorbers of low Z and the absorption in the sensitive region of the detector, starting from calibrated radioactive sources, in those which those ray-X emitted its are in most of E > 10 KeV. In the region E < 10 Kev, the quantity of experimental points is poor and also, due to the absorption problems, its are the points where greater experimental error is made. (Author)

  16. Transparent Patch Antenna on a-Si Thin Film Glass Solar Module

    Roo Ons, Maria; Shynu, S.; Ammann, Max; McCormack, Sarah; Norton, Brian

    2011-01-01

    An optically transparent microstrip patch mounted on the surface of a commercially available solar module is proposed. The patch comprises a thin sheet of clear polyester with a conductive coating. The amorphous silicon solar cells in the module are used as both photovoltaic generator and antenna ground plane. The proposed structure provides a peak gain of 3.96 dBi in the 3.4-3.8 GHz range without significantly compromising the light transmission in the module. A comparison between copper and...

  17. Investigation of tilted dose kernels for portal dose prediction in a-Si electronic portal imagers

    Chytyk, K.; McCurdy, B. M. C.

    2006-01-01

    The effect of beam divergence on dose calculation via Monte Carlo generated dose kernels was investigated in an amorphous silicon electronic portal imaging device (EPID). The flat-panel detector was simulated in EGSnrc with an additional 3.0 cm water buildup. The model included details of the detector's imaging cassette and the front cover upstream of it. To approximate the effect of the EPID's rear housing, a 2.1 cm air gap and 1.0 cm water slab were introduced into the simulation as equivalent backscatter material. Dose kernels were generated with an incident pencil beam of monoenergetic photons of energy 0.1, 2, 6, and 18 MeV. The orientation of the incident pencil beam was varied from 0 deg. to 14 deg. in 2 deg. increments. Dose was scored in the phosphor layer of the detector in both cylindrical (at 0 deg. ) and Cartesian (at 0 deg. -14 deg.) geometries. To reduce statistical fluctuations in the Cartesian geometry simulations at large radial distances from the incident pencil beam, the voxels were first averaged bilaterally about the pencil beam and then combined into concentric square rings of voxels. Profiles of the EPID dose kernels displayed increasing asymmetry with increasing angle and energy. A comparison of the superposition (tilted kernels) and convolution (parallel kernels) dose calculation methods via the χ-comparison test (a derivative of the γ-evaluation) in worst-case-scenario geometries demonstrated an agreement between the two methods within 0.0784 cm (one pixel width) distance-to-agreement and up to a 1.8% dose difference. More clinically typical field sizes and source-to-detector distances were also tested, yielding at most a 1.0% dose difference and the same distance-to-agreement. Therefore, the assumption of parallel dose kernels has less than a 1.8% dosimetric effect in extreme cases and less than a 1.0% dosimetric effect in most clinically relevant situations and should be suitable for most clinical dosimetric applications. The resulting time difference for the parallel kernel assumption versus the tilted kernels was 10.5 s vs 18 h (a factor of approximately 6000), dependent on existing hardware and software details

  18. Characterization of a SiC MIS Schottky diode as RBS particle detector

    Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

    2018-02-01

    A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

  19. Morphology and Surface Energy of a Si Containing Semifluorinated Di-block Copolymer Thin Films.

    Shrestha, Umesh; Clarson, Stephen; Perahia, Dvora

    2013-03-01

    The structure and composition of an interface influence stability, adhesiveness and response to external stimuli of thin polymeric films. Incorporation of fluorine affects interfacial energy as well as thermal and chemical stability of the layers. The incompatibility between the fluorinated and non-fluorinated blocks induces segregation that leads to long range correlations where the tendency of the fluorine to migrate to interfaces impacts the surface tension of the films. Concurrently Si in a polymeric backbone enhances the flexibility of polymeric chains. Our previous studies of poly trifluoro propyl methyl siloxane-polystyrene thin films with SiF fraction 0.03-0.5 as a function of temperature have shown that the SiF block drives layering parallel to the surface of the diblock. Here in we report the structure and interfacial energies of SiF-PS in the plane of the films, as a function of the volume fraction of the SiF block obtained from Atomic Force microscopy and contact angle measurement studies. This work is supported by NSF DMR - 0907390

  20. Microstructure, optical characterization and light induced degradation in a-Si:H deposited at different temperatures

    Minani, E.; Sigcau, Z.; Adgebite, O.; Ramukosi, F.L.; Ntsoane, T.P.; Harindintwari, S.; Knoesen, D.; Comrie, C.M.; Britton, D.T.; Haerting, M.

    2006-01-01

    The microstructure and optical properties of a series of hydrogenated amorphous silicon layers deposited on glass substrates at different temperature have been characterized by means of X-ray diffraction techniques and optical spectroscopy. The radial distribution function of the as-deposited samples showed an increase in the bond angle and a decrease in the radial distance indicating a relaxation of the amorphous network with increasing the deposition temperature. Light induced degradation was studied using a simulated daylight spectrum. The changes in hydrogen bonding configuration, associated with the light soaking at different stages of illumination, was monitored via the transmission bands of the vibrational wag and stretch modes of the IR spectrum

  1. Development of a SiPM-based PET imaging system for small animals

    Lu, Yanye [Department of Biomedicine and Engineering, College of Engineering, Peking University, Beijing 100871 (China); Yang, Kun, E-mail: yangkun9999@hotmail.com [Department of Control Technology and Instrumentation, College of Quality and Technical Supervision, Hebei University, Baoding, 071000 (China); Zhou, Kedi; Zhang, Qiushi; Pang, Bo [Department of Biomedicine and Engineering, College of Engineering, Peking University, Beijing 100871 (China); Ren, Qiushi, E-mail: renqsh@coe.pku.edu.cn [Department of Biomedicine and Engineering, College of Engineering, Peking University, Beijing 100871 (China)

    2014-04-11

    Advances in small animal positron emission tomography (PET) imaging have been accelerated by many new technologies such as the successful incorporation of silicon photomultiplier (SiPM). In this paper, we have developed a compact, lightweight PET imaging system that is based on SiPM detectors for small animals imaging, which could be integrated into a multi-modality imaging system. This PET imaging system consists of a stationary detector gantry, a motor-controlled animal bed module, electronics modules, and power supply modules. The PET detector, which was designed as a multi-slice circular ring geometry of 27 discrete block detectors, is composed of a cerium doped lutetium–yttrium oxyorthosilicate (LYSO) scintillation crystal and SiPM arrays. The system has a 60 mm transaxial field of view (FOV) and a 26 mm axial FOV. Performance tests (e.g. spatial resolution, energy resolution, and sensitivity) and phantom and animal imaging studies were performed to evaluate the imaging performance of the PET imaging system. The performance tests and animal imaging results demonstrate the feasibility of an animal PET system based on SiPM detectors and indicate that SiPM detectors can be promising photodetectors in animal PET instrumentation development.

  2. Progress in the development of a SiCf/SiC creep test

    Hamilton, M.L.; Lewinsohn, C.A.; Jones, R.H.; Youngblood, G.E.; Garner, F.A.; Hecht, S.L.

    1996-01-01

    An effort is now underway to design an experiment that will allow the irradiation creep behavior of SiC f /SiC composites to be quantified. Numerous difficulties must be overcome to achieve this goal, including determining an appropriate specimen geometry that will fit their radiation volumes available and developing a fabrication procedure for such a specimen. A specimen design has been selected, and development of fabrication methods is proceeding. Thermal and stress analyses are being performed to evaluate the viability of the specimen and to assist with determining the design parameters. A possible alternate type of creep test is also being considered. Progress in each of these areas is described in this report

  3. On the preparation and growth of a-Si:H thin films by Hg-sensitised ...

    It also recall and summarizes some fundamental issues such experimental systems or apparatus particularities, the analysis of gas-phase reactions in the reactor, the surface reaction model of SiH3 and H during the film growth and all the kinetic model for lamp induced Photo-CVD. Key words: Hydrogenated Amorphous ...

  4. Performance assessment issues in utility-scale photovoltaics in warm and sunny climates★

    Ruther Ricardo

    2017-01-01

    Full Text Available With the declining costs of photovoltaics (PV, and the excellent solar energy resource availability in the country, the Brazilian government and the electricity sector have started to evaluate and consider PV as a serious potential contributor to the National electricity mix. Since the late 1990s, Brazilian electrical utilities are required by the National Electrical Energy Regulatory Agency ANEEL to invest 1% of their operational income on R&D. In 2011 ANEEL issued an R&D call dedicated to utility-scale PV. The solar energy research group at Universidade Federal de Santa Catarina (www.fotovoltaica.ufsc.br has been actively investigating and promoting PV in Brazil, operates since 1997 the first grid-connected, thin-film PV generator in the country. Under the ANEEL R&D call, a 4-year, US$ 20 million project was started in 2012. The project aims at assessing the performance of seven different PV technologies at eight different Evaluation Sites (ES in Brazil, and also to design, procure, install and monitor the performance of a utility-scale 3 MWp R&D PV power plant, which is located at one of these eight ES. The 3 MWp PV power plant and all the eight ES are fully monitored, with all electrical and environmental parameters measured at 1-s intervals. PV technologies include thin-film amorphous silicon (a-Si, microcrystalline silicon (μc-Si, cadmium telluride (CdTe, copper indium gallium diselenide, mono- and multi-crystalline silicon (c-Si and m-Si, all at fixed tilt, as well as double-axis tracking, concentrated PV using triple-junction InGap/GaAs/Ge at 820 suns concentration. All ES are identical, except for the fixed PV arrays tilt angle, which is equal to the latitude at each site. The 3 MWp R&D PV power plant is co-located at one of the ES sites. Thin-film PV technologies with a low temperature coefficient of power presented superior output performance, and cloud-edge and cloud-enhancement effects of solar irradiance resulted in

  5. Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

    Yeh, Li-Ko; Tian, Wei-Cheng; Lai, Kun-Yu; He, Jr-Hau

    2016-01-01

    GaInP/GaAs/Ge triple-junction concentrator solar cells with significant efficiency enhancement were demonstrated with antireflective ZnO nanoneedles. The novel nanostructure was attained with a Zn(NO3)2-based solution containing vitamin C. Under one sun AM 1.5G solar spectrum, conversion efficiency of the triple-junction device was improved by 23.7% via broadband improvement in short-circuit currents of 3 sub-cells after the coverage by the nanoneedles with a graded refractive index profile. The efficiency enhancement further went up to 45.8% at 100 suns. The performance boost through the nanoneedles also became increasingly pronounced in the conditions of high incident angles and the cloudy weather, e.g. 220.0% of efficiency enhancement was observed at the incident angle of 60°. These results were attributed to the exceptional broadband omnidirectionality of the antireflective nanoneedles.

  6. High Radiation Resistance IMM Solar Cell

    Pan, Noren

    2015-01-01

    Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

  7. A quantitative understanding on effects of finest nanograins on nanovoid growth in nanocrystalline materials

    He, Tongyang; Zhou, Jianqiu; Liu, Hongxi

    2015-01-01

    For evaluating the effects of finest nanograins, whose grain size ranging from 2 to 4 nm, on nanovoid growth in nanocrystalline (NC) materials, we proposed a new theoretical model composed of finest nanograins evenly located at the triple junctions of conventional NC materials (grain size ranging from 10 to 100 nm). In the framework of the model, the mechanism of nanovoid growth is the dislocation emission. The blocking effect of finest nanograin on the motion of dislocations emitted from the nanovoid surface was taken into consideration. The critical condition required for dislocations emitted from the nanovoid surface and the influences of the finest nanograin on the nanovoid growth were calculated separately. The quantitatively analyzed results showed that finest nanograins could significantly suppress the growth of nanovoids compared with the triple junctions without finest nanograins. Therefore, the fracture toughness of the NC materials could be enhanced by finest nanograins

  8. Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

    Yeh, Li-Ko

    2016-12-14

    GaInP/GaAs/Ge triple-junction concentrator solar cells with significant efficiency enhancement were demonstrated with antireflective ZnO nanoneedles. The novel nanostructure was attained with a Zn(NO3)2-based solution containing vitamin C. Under one sun AM 1.5G solar spectrum, conversion efficiency of the triple-junction device was improved by 23.7% via broadband improvement in short-circuit currents of 3 sub-cells after the coverage by the nanoneedles with a graded refractive index profile. The efficiency enhancement further went up to 45.8% at 100 suns. The performance boost through the nanoneedles also became increasingly pronounced in the conditions of high incident angles and the cloudy weather, e.g. 220.0% of efficiency enhancement was observed at the incident angle of 60°. These results were attributed to the exceptional broadband omnidirectionality of the antireflective nanoneedles.

  9. Nonreactive spreading at high temperature: molten metals and oxides on molybdenum.

    Saiz, E; Tomsia, A P; Rauch, N; Scheu, C; Ruehle, M; Benhassine, M; Seveno, D; de Coninck, J; Lopez-Esteban, S

    2007-10-01

    The spontaneous spreading of small liquid metal (Cu, Ag, Au) and oxide drops on Mo substrates has been studied using a drop transfer setup combined with high-speed video. Under the experimental conditions used in this work, spreading occurs in the absence of interfacial reactions or ridging. The analysis of the spreading data indicates that dissipation at the triple junction (that can be described in terms of a triple-line friction) is playing a dominant role in the movement of the liquid front. This is due, in part, to the much stronger atomic interactions in high-temperature systems when compared to organic liquids. As a result of this analysis, a comprehensive view of spreading emerges in which the strength of the atomic interactions (solid-liquid, liquid-liquid) determines the relative roles of viscous impedance and dissipation at the triple junction in spreading kinetics.

  10. Space-Based Solar Power System Architecture

    2012-12-01

    to this thesis, “the Boeing 702 offers a range of power up to 18 kW. Dual and triple -junction gallium arsenide solar cells enable such high power...CONCLUSIONS ........................................................................................................85 A. KEY POINTS AND...USAF. Without the proper starting point and frame of reference, this thesis would not have been possible. Thank you to everyone who had an influence on

  11. Crystallization microstructure in transparent monotectic alloys

    Kaukler, W. F.; Frazier, D. O.

    1986-01-01

    The surprising funguslike morphology which occurs at the liquid(1)/liquid(2)/solid triple junction in directionally solidifying miscibility gap systems at the monotectic temperature is described. The monotectic temperature in a binary mixture is the one at which two immiscible solutions of the same two components form phases in equilibrium with the solid phase of one of the components. The growth of this morphology is described, and a similarity between it and that of a known crystal growth morphology is pointed out.

  12. 3-D laser confocal microscopy study of the oxidation of NdFeB magnets in atmospheric conditions

    Meakin, J. P.; Speight, J. D.; Sheridan, R. S.; Bradshaw, A.; Harris, I. R.; Williams, A. J.; Walton, A.

    2016-08-01

    Neodymium iron boron (NdFeB) magnets are used in a number of important applications, such as generators in gearless wind turbines, motors in electric vehicles and electronic goods (e.g.- computer hard disk drives, HDD). Hydrogen can be used as a processing gas to separate and recycle scrap sintered Nd-Fe-B magnets from end-of-life products to form a powder suitable for recycling. However, the magnets are likely to have been exposed to atmospheric conditions prior to processing, and any oxidation could lead to activation problems for the hydrogen decrepitation reaction. Many previous studies on the oxidation of NdFeB magnets have been performed at elevated temperatures; however, few studies have been formed under atmospheric conditions. In this paper a combination of 3-D laser confocal microscopy and Raman spectroscopy have been used to assess the composition, morphology and rate of oxidation/corrosion on scrap sintered NdFeB magnets. Confocal microscopy has been employed to measure the growth of surface reaction products at room temperature, immediately after exposure to air. The results showed that there was a significant height increase at the triple junctions of the Nd-rich grain boundaries. Using Raman spectroscopy, the product was shown to consist of Nd2O3 and formed only on the Nd-rich triple junctions. The diffusion coefficient of the triple junction reaction product growth at 20 °C was determined to be approximately 4 × 10-13 cm2/sec. This value is several orders of magnitude larger than values derived from the diffusion controlled oxide growth observations at elevated temperatures in the literature. This indicates that the growth of the room temperature oxidation products are likely defect enhanced processes at the NdFeB triple junctions.

  13. Geological and Structural evolution of the Eurasia Africa plate boundary in the Gulf of Cadiz Central Eastern Atlantic Sea.

    D’Oriano, Filippo

    2010-01-01

    Iberia Africa plate boundary, cross, roughly W-E, connecting the eastern Atlantic Ocean from Azores triple junction to the Continental margin of Morocco. Relative movement between the two plate change along the boundary, from transtensive near the Azores archipelago, through trascurrent movement in the middle at the Gloria Fracture Zone, to transpressive in the Gulf of Cadiz area. This study presents the results of geophysical and geological analysis on the plate boundary area offshore Gibral...

  14. Space-Based Telescopes for the Actionable Refinement of Ephemeris Systems and Test Engineering

    2011-12-01

    57 the properties of Spectrolab Ultra-Triple Junction (UTJ) solar cells. The solar panel interior-facing surfaces were modeled as basic panel...satellites, and, finally, a thermal model has been developed for on-orbit thermal performance evaluation. The STARE satellite is currently scheduled to be...a secondary payload mounted in the NPS CubeSat Launcher (NPSCuL), attached to the Atlas V Aft Bulkhead Carrier (ABC) on the Centaur upper stage. The

  15. Simple Lie algebras and Dynkin diagrams

    Buccella, F.

    1983-01-01

    The following theorem is studied: in a simple Lie algebra of rank p there are p positive roots such that all the other n-3p/2 positive roots are linear combinations of them with integer non negative coefficients. Dykin diagrams are built by representing the simple roots with circles and drawing a junction between the roots. Five exceptional algebras are studied, focusing on triple junction algebra, angular momentum algebra, weights of the representation, antisymmetric tensors, and subalgebras

  16. Homo-Tandem Polymer Solar Cells withVOC>1.8 V for Efficient PV-Driven Water Splitting

    Gao, Yangqin

    2016-03-06

    Efficient homo-tandem and triple-junction polymer solar cells are constructed by stacking identical subcells composed of the wide-bandgap polymer PBDTTPD, achieving power conversion efficiencies >8% paralleled by open-circuit voltages >1.8 V. The high-voltage homo-tandem is used to demonstrate PV-driven electrochemical water splitting with an estimated solar-to-hydrogen conversion efficiency of ≈6%. © 2016 WILEY-VCH Verlag GmbH & Co.

  17. Strike-slip tectonics during rift linkage

    Pagli, C.; Yun, S. H.; Ebinger, C.; Keir, D.; Wang, H.

    2017-12-01

    The kinematics of triple junction linkage and the initiation of transforms in magmatic rifts remain debated. Strain patterns from the Afar triple junction provide tests of current models of how rifts grow to link in area of incipient oceanic spreading. Here we present a combined analysis of seismicity, InSAR and GPS derived strain rate maps to reveal that the plate boundary deformation in Afar is accommodated primarily by extensional tectonics in the Red Sea and Gulf of Aden rifts, and does not require large rotations about vertical axes (bookshelf faulting). Additionally, models of stress changes and seismicity induced by recent dykes in one sector of the Afar triple junction provide poor fit to the observed strike-slip earthquakes. Instead we explain these patterns as rift-perpendicular shearing at the tips of spreading rifts where extensional strains terminate against less stretched lithosphere. Our results demonstrate that rift-perpendicular strike-slip faulting between rift segments achieves plate boundary linkage during incipient seafloor spreading.

  18. Thermodynamic and achievable efficiencies for solar-driven electrochemical reduction of carbon dioxide to transportation fuels

    Singh, Meenesh R.; Clark, Ezra L.; Bell, Alexis T.

    2015-11-01

    Thermodynamic, achievable, and realistic efficiency limits of solar-driven electrochemical conversion of water and carbon dioxide to fuels are investigated as functions of light-absorber composition and configuration, and catalyst composition. The maximum thermodynamic efficiency at 1-sun illumination for adiabatic electrochemical synthesis of various solar fuels is in the range of 32-42%. Single-, double-, and triple-junction light absorbers are found to be optimal for electrochemical load ranges of 0-0.9 V, 0.9-1.95 V, and 1.95-3.5 V, respectively. Achievable solar-to-fuel (STF) efficiencies are determined using ideal double- and triple-junction light absorbers and the electrochemical load curves for CO2 reduction on silver and copper cathodes, and water oxidation kinetics over iridium oxide. The maximum achievable STF efficiencies for synthesis gas (H2 and CO) and Hythane (H2 and CH4) are 18.4% and 20.3%, respectively. Whereas the realistic STF efficiency of photoelectrochemical cells (PECs) can be as low as 0.8%, tandem PECs and photovoltaic (PV)-electrolyzers can operate at 7.2% under identical operating conditions. We show that the composition and energy content of solar fuels can also be adjusted by tuning the band-gaps of triple-junction light absorbers and/or the ratio of catalyst-to-PV area, and that the synthesis of liquid products and C2H4 have high profitability indices.

  19. Thermodynamic and achievable efficiencies for solar-driven electrochemical reduction of carbon dioxide to transportation fuels.

    Singh, Meenesh R; Clark, Ezra L; Bell, Alexis T

    2015-11-10

    Thermodynamic, achievable, and realistic efficiency limits of solar-driven electrochemical conversion of water and carbon dioxide to fuels are investigated as functions of light-absorber composition and configuration, and catalyst composition. The maximum thermodynamic efficiency at 1-sun illumination for adiabatic electrochemical synthesis of various solar fuels is in the range of 32-42%. Single-, double-, and triple-junction light absorbers are found to be optimal for electrochemical load ranges of 0-0.9 V, 0.9-1.95 V, and 1.95-3.5 V, respectively. Achievable solar-to-fuel (STF) efficiencies are determined using ideal double- and triple-junction light absorbers and the electrochemical load curves for CO2 reduction on silver and copper cathodes, and water oxidation kinetics over iridium oxide. The maximum achievable STF efficiencies for synthesis gas (H2 and CO) and Hythane (H2 and CH4) are 18.4% and 20.3%, respectively. Whereas the realistic STF efficiency of photoelectrochemical cells (PECs) can be as low as 0.8%, tandem PECs and photovoltaic (PV)-electrolyzers can operate at 7.2% under identical operating conditions. We show that the composition and energy content of solar fuels can also be adjusted by tuning the band-gaps of triple-junction light absorbers and/or the ratio of catalyst-to-PV area, and that the synthesis of liquid products and C2H4 have high profitability indices.

  20. Thermodynamic and achievable efficiencies for solar-driven electrochemical reduction of carbon dioxide to transportation fuels

    Singh, Meenesh R.; Clark, Ezra L.; Bell, Alexis T.

    2015-01-01

    Thermodynamic, achievable, and realistic efficiency limits of solar-driven electrochemical conversion of water and carbon dioxide to fuels are investigated as functions of light-absorber composition and configuration, and catalyst composition. The maximum thermodynamic efficiency at 1-sun illumination for adiabatic electrochemical synthesis of various solar fuels is in the range of 32–42%. Single-, double-, and triple-junction light absorbers are found to be optimal for electrochemical load ranges of 0–0.9 V, 0.9–1.95 V, and 1.95–3.5 V, respectively. Achievable solar-to-fuel (STF) efficiencies are determined using ideal double- and triple-junction light absorbers and the electrochemical load curves for CO2 reduction on silver and copper cathodes, and water oxidation kinetics over iridium oxide. The maximum achievable STF efficiencies for synthesis gas (H2 and CO) and Hythane (H2 and CH4) are 18.4% and 20.3%, respectively. Whereas the realistic STF efficiency of photoelectrochemical cells (PECs) can be as low as 0.8%, tandem PECs and photovoltaic (PV)-electrolyzers can operate at 7.2% under identical operating conditions. We show that the composition and energy content of solar fuels can also be adjusted by tuning the band-gaps of triple-junction light absorbers and/or the ratio of catalyst-to-PV area, and that the synthesis of liquid products and C2H4 have high profitability indices. PMID:26504215