WorldWideScience

Sample records for sputter deposited indium-tin

  1. Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

    1992-05-01

    Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

  2. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  3. Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Horstmann, F.; Sittinger, V.; Szyszka, B.

    2009-01-01

    In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. ] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min kW. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 deg. C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art ITO films which were obtained at optimized direct current magnetron sputtering conditions

  4. Properties of indium tin oxide films deposited using High Target Utilisation Sputtering

    International Nuclear Information System (INIS)

    Calnan, S.; Upadhyaya, H.M.; Thwaites, M.J.; Tiwari, A.N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited on soda lime glass and polyimide substrates using an innovative process known as High Target Utilisation Sputtering (HiTUS). The influence of the oxygen flow rate, substrate temperature and sputtering pressure, on the electrical, optical and thermal stability properties of the films was investigated. High substrate temperature, medium oxygen flow rate and moderate pressure gave the best compromise of low resistivity and high transmittance. The lowest resistivity was 1.6 x 10 -4 Ω cm on glass while that on the polyimide was 1.9 x 10 -4 Ω cm. Substrate temperatures above 100 deg. C were required to obtain visible light transmittance exceeding 85% for ITO films on glass. The thermal stability of the films was mainly influenced by the oxygen flow rate and thus the initial degree of oxidation. The film resistivity was either unaffected or reduced after heating in vacuum but generally increased for oxygen deficient films when heated in air. The greatest increase in transmittance of oxygen deficient films occurred for heat treatment in air while that of the highly oxidised films was largely unaffected by heating in both media. This study has demonstrated the potential of HiTUS as a favourable deposition method for high quality ITO suitable for use in thin film solar cells

  5. Effects of target bias voltage on indium tin oxide films deposited by high target utilisation sputtering

    International Nuclear Information System (INIS)

    Calnan, Sonya; Upadhyaya, Hari M.; Dann, Sandra E.; Thwaites, Mike J.; Tiwari, Ayodhya N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited by reactive High Target Utilisation Sputtering (HiTUS) onto glass and polyimide substrates. The ion plasma was generated by an RF power source while the target bias voltage was varied from 300 V to 500 V using a separate DC power supply. The deposition rate, at constant target power, increased with DC target voltage due to increased ion energy reaching 34 nm/min at 500 V. All the films were polycrystalline and showed strong (400) and (222) reflections with the relative strength of latter increasing with target bias voltage. The resistivity was lowest at 500 V with values of 1.8 x 10 -4 Ω cm and 2.4 x 10 -4 Ω cm on glass and polyimide, respectively but was still less than 5 x 10 -4 Ω cm at 400 V. All films were highly transparent to visible light, (> 80%) but the NIR transmittance decreased with increasing target voltage due to higher free carrier absorption. Therefore, ITO films can be deposited onto semiconductor layers such as in solar cells, with minimal ion damage while maintaining low resistivity

  6. Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

    International Nuclear Information System (INIS)

    Xiao, Yu; Gao, Fangyuan; Dong, Guobo; Guo, Tingting; Liu, Qirong; Ye, Di; Diao, Xungang

    2014-01-01

    Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 Ω/square, a lowest resistivity of 3.61 × 10 −4 Ω cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (μ) and carrier concentration (n) was interpreted by a functional relation of μ ∼ n −0.127 , which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies. - Highlights: • ITO thin films were grown on PET substrates by DC facing target sputtering system. • All the films were prepared at room temperature and exhibited amorphous structure. • Highly conductive and transparent ITO thin films were obtained. • The dominant ionized donor scattering mechanism was suggested

  7. Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Yu [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Gao, Fangyuan, E-mail: gaofangyuan@buaa.edu.cn [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Dong, Guobo; Guo, Tingting; Liu, Qirong [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China); Ye, Di [Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100191 (China); Diao, Xungang [Solar Film Laboratory, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 (China)

    2014-04-01

    Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 Ω/square, a lowest resistivity of 3.61 × 10{sup −4} Ω cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (μ) and carrier concentration (n) was interpreted by a functional relation of μ ∼ n{sup −0.127}, which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies. - Highlights: • ITO thin films were grown on PET substrates by DC facing target sputtering system. • All the films were prepared at room temperature and exhibited amorphous structure. • Highly conductive and transparent ITO thin films were obtained. • The dominant ionized donor scattering mechanism was suggested.

  8. Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Deuk Yeon; Baik, Hong-Koo

    2008-01-01

    Indium tin oxide (ITO) films were deposited on a Si (1 0 0) substrate at room temperature by cesium-assisted magnetron sputtering. Including plasma characteristics, the structural, electrical, and optical properties of deposited films were investigated as a function of cesium partial vapor pressure controlled by cesium reservoir temperature. We calculated the cesium coverage on the target surface showing maximum formation efficiency of negative ions by means of the theoretical model. Cesium addition promotes the formation efficiency of negative ions, which plays important role in enhancing the crystallinity of ITO films. In particular, the plasma density was linearly increased with cesium concentrations. The resultant decrease in specific resistivity and increase in transmittance (82% in the visible region) at optimum cesium concentration (4.24 x 10 -4 Ω cm at 80 deg. C of reservoir temperature) may be due to enhanced crystallinity of ITO films. Excess cesium incorporation into ITO films resulted in amorphization of its microstructure leading to degradation of ITO crystallinity. We discuss the cesium effects based on the growth mechanism of ITO films and the plasma density

  9. Sputter deposition of indium tin oxide onto zinc pthalocyanine: Chemical and electronic properties of the interface studied by photoelectron spectroscopy

    Science.gov (United States)

    Gassmann, Jürgen; Brötz, Joachim; Klein, Andreas

    2012-02-01

    The interface chemistry and the energy band alignment at the interface formed during sputter deposition of transparent conducting indium tin oxide (ITO) onto the organic semiconductor zinc phtalocyanine (ZnPc), which is important for inverted, transparent, and stacked organic light emitting diodes, is studied by in situ photoelectron spectroscopy (XPS and UPS). ITO was sputtered at room temperature and a low power density with a face to face arrangement of the target and substrate. With these deposition conditions, no chemical reaction and a low barrier height for charge injection at this interface are observed. The barrier height is comparable to those observed for the reverse deposition sequence, which also confirms the absence of sputter damage.

  10. Electrical and optical properties of indium tin oxide thin films deposited on unheated substrates by d.c. reactive sputtering

    International Nuclear Information System (INIS)

    Karasawa, T.; Miyata, Y.

    1993-01-01

    Transparent conducting thin films of indium tin oxide (ITO) have been deposited by d.c. reactive planar magnetron sputtering by using metal In-Sn alloy target in an Ar-O 2 gas mixture. The study demonstrates that the deposition on unheated substrates achieved sheet resistance of as low as about 50-60 Ω/□ (or a resistivity of about 7 x 10 -4 Ω cm), and visible transmission of about 90% for a wavelength of 420 nm. The effects of heat treatment at 450 C in air depends on the deposition conditions of the as-deposited ITO films. Although annealing improves the properties of as-deposited ITO films which were deposited with non-optimum conditions, the optimized condition for the formation of the film in the as-deposited state is essential to obtain a high quality transparent conducting coating. (orig.)

  11. Rf reactive sputtering of indium-tin-oxide films

    International Nuclear Information System (INIS)

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  12. Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

    Science.gov (United States)

    Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

    2013-05-01

    Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

  13. Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

    International Nuclear Information System (INIS)

    Iwase, Hideo; Hoshi, Youichi; Kameyama, Makoto

    2006-01-01

    Distribution of the electrical properties of indium-tin oxide (ITO) film prepared by both a planar-magnetron sputtering system (PMSS) and a facing-targets sputtering system (FTSS) at room temperature were investigated. It was found that the outstanding non-uniformities of the electrical properties in noncrystalline ITO films are mainly due to the variation of the oxygen stoichiometry dependent on film positions on substrate surfaces. Furthermore, ITO film with uniform distribution of electrical properties was obtainable using FTSS

  14. X-ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition

    International Nuclear Information System (INIS)

    Nelson, A.J.; Aharoni, H.

    1987-01-01

    X-ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O 2 partial pressure during deposition. The oxygen partial pressure was varied over the range of 2.5 x 10 -6 --4.0 x 10 -5 Torr. Changes in composition as well as in the deconvoluted In 3d 5 /sub // 2 , Sn 3d 5 /sub // 2 , and O 1s core level spectra were observed and correlated with the variation of the oxygen partial pressure during deposition. Results show that the films become increasingly stoichiometric as P/sub =/ is increased and that the excess oxygen introduced during deposition is bound predominantly to the Sn and has little or no effect on the In--O bonding

  15. Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Hyun-Jun; Song, Pung-Keun

    2014-01-01

    Indium tin oxide (ITO) and Ga-doped ITO (ITO:Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO:Ga targets (doped-Ga: 0, 0.1 and 2.9 wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 °C) in a vacuum chamber for 30 min. The amorphous ITO:Ga (0.1 wt.% Ga) films post-annealed at 220 °C exhibited relatively low resistivity (4.622x10 −4 Ω cm), indicating that the crystallinity of the ITO:Ga films decreased with increasing Ga content. In addition, the amorphous ITO:Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. - Highlights: • The Ga doped indium tin oxide (ITO) films crystallized at higher temperatures than the ITO films. • The amorphisation of ITO films increases with increasing Ga content. • Similar resistivity was observed between crystalline ITO and amorphous Ga doped ITO films. • Etching property of ITO film was improved with increasing Ga content

  16. Radio frequency magnetron sputter-deposited indium tin oxide for use as a cathode in transparent organic light-emitting diode

    International Nuclear Information System (INIS)

    Chung, Choong-Heui; Ko, Young-Wook; Kim, Yong-Hae; Sohn, Choong-Yong; Hye Yong Chu; Ko Park, Sang-Hee; Lee, Jin Ho

    2005-01-01

    Indium tin oxide (ITO) films were prepared by radio frequency magnetron sputtering at room temperature, for use as a cathode in a transparent organic light-emitting diode (TOLED). To minimize damage to the TOLED by the ITO sputtering process, the target-to-substrate distance was increased to 20 cm. An ITO film deposited at the optimum oxygen partial pressure exhibited an electrical resistivity as low as 4.06 x 10 -4 Ω cm and a high optical transmittance of 91% in the visible range. The film was used as a transparent cathode for a TOLED with structure of an ITO coated glass substrate / Naphthylphenyldiamide (60 nm) / Tris-(8-hydroxyquinoline) aluminum (60 nm) / LiF (1 nm) / Al (2 nm) / Ag (8 nm) / ITO cathode (100 nm). A maximum luminance of 37,000 cd/m 2 was obtained. The device performance was comparable to a conventional OLED

  17. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2-Ar sputtering gas mixture

    Science.gov (United States)

    Álvarez-Fraga, L.; Jiménez-Villacorta, F.; Sánchez-Marcos, J.; de Andrés, A.; Prieto, C.

    2015-07-01

    The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H2 in the gas mixture of H2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H2/(Ar + H2) ratio in the range of 0.3-0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, ΦTC = T10/RS, than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices.

  18. Properties of Co-deposited indium tin oxide and zinc oxide films using a bipolar pulse power supply and a dual magnetron sputter source

    International Nuclear Information System (INIS)

    Hwang, Man-Soo; Seob Jeong, Heui; Kim, Won Mok; Seo, Yong Woon

    2003-01-01

    Multilayer coatings consisting of metal layers sandwiched between transparent conducting oxide layers are widely used for flat panel display electrodes and electromagnetic shield coatings for plasma displays, due to their high electrical conductivity and light transmittance. The electrical and optical properties of these multilayer films depend largely on the surface characteristics of the transparent conducting oxide thin films. A smoother surface on the transparent conducting oxide thin films makes it easier for the metal layer to form a continuous film, thus resulting in a higher conductivity and visible light transmittance. Indium tin oxide (ITO) and zinc oxide (ZnO) films were co-deposited using a dual magnetron sputter and a bipolar pulse power supply to decrease the surface roughness of the transparent conducting oxide films. The symmetric pulse mode of the power supply was used to simultaneously sputter an In 2 O 3 (90 wt %) : SnO 2 (10 wt %) target and a ZnO target. We varied the duty of the pulses to control the ratio of ITO : ZnO in the thin films. The electrical and optical properties of the films were studied, and special attention was paid to the surface roughness and the crystallinity of the films. By co-depositing ITO and ZnO at a pulse duty ratio of ITO:ZnO=45:45 using a dual magnetron sputter and a bipolar pulse power supply, we were able to obtain amorphous transparent conducting oxide films with a very smooth surface which had a Zn-rich buffer layer under a In-rich surface layer. All of the films exhibited typical electrical and optical properties of transparent conducting oxide films deposited at room temperature

  19. Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

    International Nuclear Information System (INIS)

    Jia, Junjun; Torigoshi, Yoshifumi; Shigesato, Yuzo; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki

    2015-01-01

    This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O 2 , H 2 O, and N 2 O as the reactive gases. Experimental results show that the electrical properties of the N 2 O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N 2 O introduction into the deposition process, where the field mobility reach to 30.8 cm 2 V –1 s –1 , which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT

  20. Influence of Oxygen Concentration on the Performance of Ultra-Thin RF Magnetron Sputter Deposited Indium Tin Oxide Films as a Top Electrode for Photovoltaic Devices

    Directory of Open Access Journals (Sweden)

    Jephias Gwamuri

    2016-01-01

    Full Text Available The opportunity for substantial efficiency enhancements of thin film hydrogenated amorphous silicon (a-Si:H solar photovoltaic (PV cells using plasmonic absorbers requires ultra-thin transparent conducting oxide top electrodes with low resistivity and high transmittances in the visible range of the electromagnetic spectrum. Fabricating ultra-thin indium tin oxide (ITO films (sub-50 nm using conventional methods has presented a number of challenges; however, a novel method involving chemical shaving of thicker (greater than 80 nm RF sputter deposited high-quality ITO films has been demonstrated. This study investigates the effect of oxygen concentration on the etch rates of RF sputter deposited ITO films to provide a detailed understanding of the interaction of all critical experimental parameters to help create even thinner layers to allow for more finely tune plasmonic resonances. ITO films were deposited on silicon substrates with a 98-nm, thermally grown oxide using RF magnetron sputtering with oxygen concentrations of 0, 0.4 and 1.0 sccm and annealed at 300 °C air ambient. Then the films were etched using a combination of water and hydrochloric and nitric acids for 1, 3, 5 and 8 min at room temperature. In-between each etching process cycle, the films were characterized by X-ray diffraction, atomic force microscopy, Raman Spectroscopy, 4-point probe (electrical conductivity, and variable angle spectroscopic ellipsometry. All the films were polycrystalline in nature and highly oriented along the (222 reflection. Ultra-thin ITO films with record low resistivity values (as low as 5.83 × 10−4 Ω·cm were obtained and high optical transparency is exhibited in the 300–1000 nm wavelength region for all the ITO films. The etch rate, preferred crystal lattice growth plane, d-spacing and lattice distortion were also observed to be highly dependent on the nature of growth environment for RF sputter deposited ITO films. The structural, electrical

  1. Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

    International Nuclear Information System (INIS)

    Koufaki, M.; Sifakis, M.; Iliopoulos, E.; Pelekanos, N.; Modreanu, M.; Cimalla, V.; Ecke, G.; Aperathitis, E.

    2006-01-01

    Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N 2 plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N 2 plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure

  2. Indium--tin oxide films radio frequency sputtered from specially formulated high density indium--tin oxide targets

    International Nuclear Information System (INIS)

    Kulkarni, S.; Bayard, M.

    1991-01-01

    High density ITO (indium--tin oxide) targets doped with Al 2 O 3 and SiO 2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen--argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a sheet resistance of 15 Ω/sq for a thickness of 1100 A. Sputtering in an oxygen--argon gas mixture and annealing in air increased sheet resistance without a large effect on the transmission. Films sputtered in argon gas alone were transparent in the visible and the sheet resistance was found to be 100--180 Ω/sq for the same thickness, without annealing

  3. Study of quartz crystal microbalance NO2 sensor coated with sputtered indium tin oxide film

    Science.gov (United States)

    Georgieva, V.; Aleksandrova, M.; Stefanov, P.; Grechnikov, A.; Gadjanova, V.; Dilova, T.; Angelov, Ts

    2014-12-01

    A study of NO2 gas sorption ability of thin indium tin oxide (ITO) deposited on 16 MHz quartz crystal microbalance (QCM) is presented. ITO films are grown by RF sputtering of indium/tin target with weight proportion 95:5 in oxygen environment. The ITO films have been characterized by X-ray photoelectron spectroscopy measurements. The ITO surface composition in atomic % is defined to be: In-40.6%, Sn-4.3% and O-55%. The thickness and refractive index of the films are determined by ellipsometric method. The frequency shift of QCM-ITO is measured at different NO2 concentrations. The QCM-ITO system becomes sensitive at NO2 concentration >= 500 ppm. The sorbed mass for each concentration is calculated according the Sauerbrey equation. The results indicated that the 1.09 ng of the gas is sorbed into 150 nm thick ITO film at 500 ppm NO2 concentration. When the NO2 concentration increases 10 times the calculated loaded mass is 5.46 ng. The sorption process of the gas molecules is defined as reversible. The velocity of sorbtion /desorption processes are studied, too. The QCM coated with thin ITO films can be successfully used as gas sensors for detecting NO2 in the air at room temperature.

  4. Study of quartz crystal microbalance NO2 sensor coated with sputtered indium tin oxide film

    International Nuclear Information System (INIS)

    Georgieva, V; Gadjanova, V; Angelov, Ts; Aleksandrova, M; Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" data-affiliation=" (Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" >Stefanov, P; Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" data-affiliation=" (Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, Acad. Georgi Bonchev str.bl. 11, 1113, Sofia (Bulgaria))" >Dilova, T; Grechnikov, A

    2014-01-01

    A study of NO 2 gas sorption ability of thin indium tin oxide (ITO) deposited on 16 MHz quartz crystal microbalance (QCM) is presented. ITO films are grown by RF sputtering of indium/tin target with weight proportion 95:5 in oxygen environment. The ITO films have been characterized by X-ray photoelectron spectroscopy measurements. The ITO surface composition in atomic % is defined to be: In-40.6%, Sn-4.3% and O-55%. The thickness and refractive index of the films are determined by ellipsometric method. The frequency shift of QCM-ITO is measured at different NO 2 concentrations. The QCM-ITO system becomes sensitive at NO 2 concentration ≥ 500 ppm. The sorbed mass for each concentration is calculated according the Sauerbrey equation. The results indicated that the 1.09 ng of the gas is sorbed into 150 nm thick ITO film at 500 ppm NO 2 concentration. When the NO 2 concentration increases 10 times the calculated loaded mass is 5.46 ng. The sorption process of the gas molecules is defined as reversible. The velocity of sorbtion /desorption processes are studied, too. The QCM coated with thin ITO films can be successfully used as gas sensors for detecting NO 2 in the air at room temperature

  5. Growth and characterization of indium tin oxide thin films deposited on PET substrates

    International Nuclear Information System (INIS)

    Lee, Jaehyeong; Jung, Hakkee; Lee, Jongin; Lim, Donggun; Yang, Keajoon; Yi, Junsin; Song, Woo-Chang

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) thin films were deposited onto polyethylene terephthalate (PET) by d.c. magnetron sputtering as the front and back electrical contact for applications in flexible displays and optoelectronic devices. In addition, ITO powder was used for sputter target in order to reduce the cost and time of the film formation processes. As the sputtering power and pressure increased, the electrical conductivity of ITO films decreased. The films were increasingly dark gray colored as the sputtering power increased, resulting in the loss of transmittance of the films. When the pressure during deposition was higher, however, the optical transmittance improved at visible region of light. ITO films deposited onto PET have shown similar optical transmittance and electrical resistivity, in comparison with films onto glass substrate. High quality films with resistivity as low as 2.5 x 10 -3 Ω cm and transmittance over 80% have been obtained on to PET substrate by suitably controlling the deposition parameters

  6. The electronic structure of co-sputtered zinc indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Carreras, Paz; Antony, Aldrin; Bertomeu, Joan [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, 08028 Barcelona (Spain); Gutmann, Sebastian [Department of Chemistry, University of South Florida, Tampa, Florida 33620 (United States); Schlaf, Rudy [Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)

    2011-10-01

    Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.

  7. Deposition and surface treatment of Ag-embedded indium tin oxide by plasma processing

    International Nuclear Information System (INIS)

    Kim, Jun Young; Kim, Jae-Kwan; Kim, Ja-Yeon; Kwon, Min-Ki; Yoon, Jae-Sik; Lee, Ji-Myon

    2013-01-01

    Ag-embedded indium tin oxide (ITO) films were deposited on Corning 1737 glass by radio-frequency magnetron sputtering under an Ar or Ar/O 2 mixed gas ambient with a combination of ITO and Ag targets that were sputtered alternately by switching on and off the shutter of the sputter gun. The effects of a subsequent surface treatment using H 2 and H 2 + O 2 mixed gas plasma were also examined. The specific resistance of the as-deposited Ag-embedded ITO sample was lower than that of normal ITO. The transmittance was quenched when Ag was incorporated in ITO. To enhance the specific resistance of Ag-embedded ITO, a surface treatment was conducted using H 2 or H 2 + O 2 mixed gas plasma. Although all samples showed improved specific resistance after the H 2 plasma treatment, the transmittance was quenched due to the formation of agglomerated metals on the surface. The specific resistance of the film was improved without any deterioration of the transmittance after a H 2 + O 2 mixed gas plasma treatment. - Highlights: • Ag-embedded indium tin oxide was deposited. • The contact resistivity was decreased by H 2 + O 2 plasma treatment. • The process was carried out at room temperature without thermal treatment. • The mechanism of enhancing the contact resistance was clarified

  8. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2–Ar sputtering gas mixture

    International Nuclear Information System (INIS)

    Álvarez-Fraga, L.; Jiménez-Villacorta, F.; Sánchez-Marcos, J.; Andrés, A. de; Prieto, C.

    2015-01-01

    Highlights: • ITO deposition on glass and PET at room temperature by using H. • High transparency and low resistance is obtained by tuning the H. • The figure of merit for ITO films on PET becomes maximal for thickness near 100 nm. - Abstract: The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H 2 in the gas mixture of H 2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H 2 /(Ar + H 2 ) ratio in the range of 0.3–0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, Φ TC = T 10 /R S , than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices

  9. Optimisation of chemical solution deposition of indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sunde, Tor Olav Løveng; Einarsrud, Mari-Ann; Grande, Tor, E-mail: grande@ntnu.no

    2014-12-31

    An environmentally friendly aqueous sol–gel process has been optimised to deposit indium tin oxide (ITO) thin films, aiming to improve the film properties and reduce the deposition costs. It was demonstrated how parameters such as cation concentration and viscosity could be applied to modify the physical properties of the sol and thereby reduce the need for multiple coatings to yield films with sufficient conductivity. The conductivity of the thin films was enhanced by adjusting the heat treatment temperature and atmosphere. Both increasing the heat treatment temperature of the films from 530 to 800 °C and annealing in reducing atmosphere significantly improved the electrical conductivity, and conductivities close to the state of the art sputtered ITO films were obtained. A pronounced decreased conductivity was observed after exposing the thin films to air and the thermal reduction and ageing of the film was studied by in situ conductivity measurements. - Highlights: • Spin coating of indium tin oxide using an aqueous solution was optimised. • The conductivity was enhanced by thermal annealing in reducing atmosphere. • The conductivity of is comparable to the conductivity of sputtered films. • A relaxation process in the reduced thin film was observed after exposure in air.

  10. Hydrogen ion sensors based on indium tin oxide thin film using radio frequency sputtering system

    International Nuclear Information System (INIS)

    Chiang, Jung-Lung; Jhan, Syun-Sheng; Hsieh, Shu-Chen; Huang, An-Li

    2009-01-01

    Indium tin oxide (ITO) thin films were deposited onto Si and SiO 2 /Si substrates using a radio frequency sputtering system with a grain size of 30-50 nm and thickness of 270-280 nm. ITO/Si and ITO/SiO 2 /Si sensing structures were achieved and connected to a standard metal-oxide-semiconductor field-effect transistor (MOSFET) as an ITO pH extended-gate field-effect transistor (ITO pH-EGFET). The semiconductor parameter analysis measurement (Keithley 4200) was utilized to measure the current-voltage (I-V) characteristics curves and study the sensing properties of the ITO pH-EGFET. The linear pH voltage sensitivities were about 41.43 and 43.04 mV/pH for the ITO/Si and ITO/SiO 2 /Si sensing structures, respectively. At the same time, both pH current sensitivities were about 49.86 and 51.73 μA/pH, respectively. Consequently, both sensing structures can be applied as extended-gate sensing heads. The separative structure is suitable for application as a disposable pH sensor.

  11. Remote plasma sputtering of indium tin oxide thin films for large area flexible electronics

    International Nuclear Information System (INIS)

    Yeadon, A.D.; Wakeham, S.J.; Brown, H.L.; Thwaites, M.J.; Whiting, M.J.; Baker, M.A.

    2011-01-01

    Indium tin oxide (ITO) thin films with a specific resistivity of 3.5 × 10 −4 Ω cm and average visible light transmission (VLT) of 90% have been reactively sputtered onto A4 Polyethylene terephthalate (PET), glass and silicon substrates using a remote plasma sputtering system. This system offers independent control of the plasma density and the target power enabling the effect of the plasma on ITO properties to be studied. Characterization of ITO on glass and silicon has shown that increasing the plasma density gives rise to a decrease in the specific resistivity and an increase in the optical band gap of the ITO films. Samples deposited at plasma powers of 1.5 kW, 2.0 kW and 2.5 kW and optimized oxygen flow rates exhibited specific resistivity values of 3.8 × 10 −4 Ω cm, 3.7 × 10 −4 Ω cm and 3.5 × 10 −4 Ω cm and optical gaps of 3.48 eV, 3.51 eV and 3.78 eV respectively. The increase in plasma density also influenced the crystalline texture and the VLT increased from 70 to 95%, indicating that more oxygen is being incorporated into the growing film. It has been shown that the remote plasma sputter technique can be used in an in-line process to produce uniform ITO coatings on PET with specific resistivities of between 3.5 × 10 −4 and 4.5 × 10 −4 Ω cm and optical transmission of greater than 85% over substrate widths of up to 30 cm.

  12. Preparation of RF reactively sputtered indium-tin oxide thin films with optical properties suitable for heat mirrors

    International Nuclear Information System (INIS)

    Boyadzhiev, S; Dobrikov, G; Rassovska, M

    2008-01-01

    Technologies are discussed for preparing and characterizing indium-tin oxide (ITO) thin films with properties appropriate for usage as heat mirrors in solar thermal collectors. The samples were prepared by means of radio frequency (RF) reactive sputtering of indium-tin targets in oxygen. The technological parameters were optimized to obtain films with optimal properties for heat mirrors. The optical properties of the films were studied by visible and infra-red (IR) spectrophotometry and laser ellipsometry. The reflectance of the films in the thermal IR range was investigated by a Fourier transform infra-red (FTIR) spectrophotometer. Heating of the substrates during the sputtering and their post deposition annealing in different environments were also studied. The ultimate purpose of the present research being the development of a technological process leading to low-cost ITO thin films with high transparency in the visible and near IR (0.3-2.4 μm) and high reflection in the thermal IR range (2.5-25 μm), we investigated the correlation of the ITO thin films structural and optical properties with the technological process parameters - target composition and heat treatment

  13. Opto-electronic properties of chromium doped indium-tin-oxide films deposited at room temperature

    International Nuclear Information System (INIS)

    Chang Weiche; Lee Shihchin; Yang Chihhao; Lin Tienchai

    2008-01-01

    Indium-tin-oxide (ITO) doped chromium films were deposited on Corning 7059 glass prepared by radio frequency (RF) magnetron sputtering under various levels of sputtering power for the chromium target. Experimental results show that the surface roughness slightly decreases by co-sputtering Cr. The pure ITO films deposited at room temperature were amorphous-like. At 15 W of chromium target power, the structure of ITO: Cr film mainly consists of (2 2 2) crystallization plane, with minority of (2 1 1), (4 4 0), (6 6 2) crystallization planes. The carrier concentration of the ITO films increases with increasing the doping of chromium, however the mobility of the carrier decreases. When the sputtering power of the chromium target is at 7.5 W, there has a maximum carrier mobility of 27.3 cm 2 V -1 s -1 , minimum carrier concentration of 2.47 x 10 20 cm -3 , and lowest resistivity of 7.32 x 10 -4 Ω cm. The transmittance of all the chromium doped ITO films at the 300-800 nm wavelength region in this experiment can reach up to 70-85%. In addition, the blue shift of UV-Vis spectrum is not observed with the increase of carrier concentration

  14. Effect of cesium assistance on the electrical and structural properties of indium tin oxide films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Song, Jaewon; Hwang, Cheol Seong; Park, Sung Jin; Yoon, Neung Ku [Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Sorona Inc., Pyeongtaek, Gyeonggi 451-841 (Korea, Republic of)

    2009-07-15

    Indium tin oxide (ITO) thin films were deposited by cesium (Cs)-assisted dc magnetron sputtering in an attempt to achieve a high performance at low temperatures. The films were deposited on SiO{sub 2}/Si wafer and glass (Eagle 2000) substrates at a substrate temperature of 100 degree sign C with a Cs vapor flow during the deposition process. The ITO thin films deposited in the presence of Cs vapor showed better crystallinity than the control films grown under normal Ar/O{sub 2} plasma conditions. The resistivity of the films with the Cs assistance was lower than that of the control films. The lowest resistivity of 6.2x10{sup -4} {Omega} cm, which is {approx}20% lower than that of the control sample, was obtained without any postdeposition thermal annealing. The surface roughness increased slightly when Cs vapor was added. The optical transmittance was >80% at wavelengths ranging from 380 to 700 nm.

  15. Flexible organic light-emitting device based on magnetron sputtered indium-tin-oxide on plastic substrate

    International Nuclear Information System (INIS)

    Wong, F.L.; Fung, M.K.; Tong, S.W.; Lee, C.S.; Lee, S.T.

    2004-01-01

    A radio-frequency sputtering deposition method was applied to prepare indium tin oxide (ITO) on a plastic substrate, polyethylene terephthalate (PET). The correlation of deposition conditions and ITO film properties was systematically investigated and characterized. The optimal ITO films had a transmittance of over 90% in the visible range (400-700 nm) and a resistivity of 5.0x10 -4 Ω-cm. Sequentially α-napthylphenylbiphenyl diamine, tris-(8-hydroxyquinoline) aluminium, and magnesium-silver were thermally deposited on the ITO-coated PET substrate to fabricate flexible organic light-emitting diodes (FOLEDs). The fabricated devices had a maximum current efficiency of ∼4.1 cd/A and a luminance of nearly 4100 cd/m 2 at 100 mA/cm 2 . These values showed that the FOLEDs had comparable performance characteristics with the conventional organic light-emitting diodes made on ITO-coated glasses with the same device configuration

  16. Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

    International Nuclear Information System (INIS)

    Hwang, J. D.; Lin, C. C.; Chen, W. L.

    2006-01-01

    A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

  17. Influence of thermal treatment in N{sub 2} atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rf-sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stroescu, H.; Anastasescu, M.; Preda, S.; Nicolescu, M.; Stoica, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Stefan, N. [National Institute for Lasers, Plasma and Radiation Physics, Atomistilor 409, RO-77125, Bucharest-Magurele (Romania); Kampylafka, V.; Aperathitis, E. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Gartner, M., E-mail: mgartner@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania)

    2013-08-31

    We report the influence of the normal thermal treatment (TT) and of rapid thermal annealing (RTA) on the microstructural, optical and electrical properties of indium tin oxide (ITO) and nitrogen doped indium tin oxide (ITO:N) thin films. The TT was carried out for 1 h at 400 °C and the RTA for 1 min up to 400 °C, both in N{sub 2} atmosphere. The ITO and ITO:N films were deposited by reactive sputtering in Argon, and respectively Nitrogen plasma, on Si with (100) and (111) orientation. The present study brings data about the microstructural and optical properties of ITO thin films with thicknesses around 300–400 nm. Atomic Force Microscopy analysis showed the formation of continuous and homogeneous films, fully covered by quasi-spherical shaped particles, with higher roughness values on Si(100) as compared to Si(111). Spectroscopic ellipsometry allowed the determination of film thickness, optical band gap as well as of the dispersion curves of n and k optical constants. X-ray diffraction analysis revealed the presence of diffraction peaks corresponding to the same nominal bulk composition of ITO, but with different intensities and preferential orientation depending on the substrate, atmosphere of deposition and type of thermal treatment. - Highlights: ► Stability of the films can be monitored by experimental ellipsometric spectra. ► The refractive index of indium tin oxide film on 0.3–30 μm range is reported. ► Si(100) substrate induces rougher film surfaces than Si(111). ► Rapid thermal annealing and normal thermal treatment lead to stable conductive film. ► The samples have a higher preferential orientation after rapid thermal annealing.

  18. Flexibility of the Indium Tin Oxide Transparent Conductive Film Deposited Onto the Plastic Substrate

    Directory of Open Access Journals (Sweden)

    Shao-Kai Lu

    2014-03-01

    Full Text Available In this study, we utilize the RF magnetron sputtering system to deposit the indium tin oxide (ITO conductive transparent film with low resistivity and high light transmittance to the polyethylene tetephthalate (PET plastic substrate and measure the film’s bending property and reliability at different tensile/compressive strain bending curvatures as well as the flexibility after cycling bending. The results show that the critical curvatures corresponded to the significant increase in the resistance of the 150 nm-thick ITO film deposited onto the PET substrate under tensile and compressive stress areO 14.1 mm and 5.4 mm, respectively. By observing the film’s surface crack and morphology, we can further discover that the critical curvature of the crack generated when the film is bent is quite consistent with the critical curvature at which the conductivity property degrades, and the film can withstand a higher compressive strain bending. In addition, the resistance and adhesion behavior of the film almost is unchanged after cycling bent for 1000 times with the curvature below the critical curvature.

  19. Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces

    International Nuclear Information System (INIS)

    Courreges, F.G.; Fahrenbruch, A.L.; Bube, R.H.

    1980-01-01

    The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions. In addition, surface properties of CdTe related to the sputtering process were investigated as a function of sputter etching and thermal oxidation using the techniques of surface photovoltage and photoluminescence. ITO/CdTe cells prepared by this sputtering method consist of an n + -ITO/n-CdTe/p-CdTe buried homojunction with about a 1-μm-thick n-type CdTe layer formed by heating of the surface of the CdTe during sputtering. Solar efficiencies up to 8% have been observed with V/sub 0c/=0.82 V and J/sub s/c=14.5 mA/cm 2 . The chief degradation mechanism involves a decrease in V/sub 0c/ with a transformation of the buried homojunction structure to an actual ITO/CdTe heterojunction

  20. Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

    Science.gov (United States)

    Jaya, T. P.; Pradyumnan, P. P.

    2017-12-01

    Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

  1. On the structure and surface chemical composition of indium-tin oxide films prepared by long-throw magnetron sputtering

    International Nuclear Information System (INIS)

    Chuang, M.J.; Huang, H.F.; Wen, C.H.; Chu, A.K.

    2010-01-01

    Structures and surface chemical composition of indium tin oxide (ITO) thin films prepared by long-throw radio-frequency magnetron sputtering technique have been investigated. The ITO films were deposited on glass substrates using a 20 cm target-to-substrate distance in a pure argon sputtering environment. X-ray diffraction results showed that an increase in substrate temperature resulted in ITO structure evolution from amorphous to polycrystalline. Field-emission scanning electron microscopy micrographs suggested that the ITO films were free of bombardment of energetic particles since the microstructures of the films exhibited a smaller grain size and no sub-grain boundary could be observed. The surface composition of the ITO films was characterized by X-ray photoelectron spectroscopy (XPS). Oxygen atoms in both amorphous and crystalline ITO structures were observed from O 1 s XPS spectra. However, the peak of the oxygen atoms in amorphous ITO phase could only be found in samples prepared at low substrate temperatures. Its relative peak area decreased drastically when substrate temperatures were larger than 200 o C. In addition, a composition analysis from the XPS results revealed that the films deposited at low substrate temperatures contained high concentration of oxygen at the film surfaces. The oxygen-rich surfaces can be attributed to hydrolysis reactions of indium oxides, especially when large amount of the amorphous ITO were developed near the film surfaces.

  2. Laterally resolved ion-distribution functions at the substrate position during magnetron sputtering of indium-tin oxide films

    International Nuclear Information System (INIS)

    Plagemann, A.; Ellmer, K.; Wiesemann, K.

    2007-01-01

    During the magnetron sputtering from an indium-tin oxide (ITO) target (76 mm diameter) we measured the ion-distribution functions (IDFs) of energetic ions (argon, indium, and oxygen ions) at the substrate surface using a combination of a quadrupole mass spectrometer and an electrostatic energy analyzer. We obtained the IDFs for argon sputtering pressures in the range from 0.08 to 2 Pa and for dc as well as rf (13.56 MHz) plasma excitation with powers from 10 to 100 W. The IDF measurements were performed both over the target center at a target-to-substrate distance of 65 mm and at different positions along the target radius in order to scan the erosion track of the target. The mean kinetic energies of argon ions calculated from the IDFs in the dc plasma decreased from about 30 to 15 eV, when the argon pressure increased from 0.08 to 2 Pa, which is caused by a decrease of the electron temperature also by a factor of 2. Indium atoms exhibit higher mean energies due to their additional energy from the sputtering process. The total metal ion flux turns out to be proportional to the discharge power and the pressure, the latter dependence being due to Penning ionization of the metal atoms (In and Sn). From the scans across the target surface the lateral distributions of metal, oxygen, and argon ions were derived. In the dc discharge the position of the erosion track is reproduced by increased ion intensities, while it is not the case for the rf excited plasma. The lateral variations of the observed species do not influence the lateral resistivity distributions of the deposited ITO films

  3. Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

    International Nuclear Information System (INIS)

    Yu Zhinong; Li Yuqiong; Xia Fan; Zhao Zhiwei; Xue Wei

    2009-01-01

    The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO 2 ) between the ITO film and the PET substrate. ITO films deposited on SiO 2 -coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO 2 -coated PET are 85% and 0.90 x 10 -3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO 2 -coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO 2 buffer layer.

  4. Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

    Science.gov (United States)

    Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

    1993-06-01

    Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

  5. Textured indium tin oxide thin films by chemical solution deposition and rapid thermal processing

    International Nuclear Information System (INIS)

    Mottern, Matthew L.; Tyholdt, Frode; Ulyashin, Alexander; Helvoort, Antonius T.J. van; Verweij, Henk; Bredesen, Rune

    2007-01-01

    The microstructure of state-of-the-art chemical solution deposited indium tin oxide thin films typically consists of small randomly oriented grains, high porosity and poor homogeneity. The present study demonstrates how the thin film microstructure can be improved significantly by tailoring the precursor solutions and deposition conditions to be kinetically and thermodynamically favorable for generation of homogeneous textured thin films. This is explained by the occurrence of a single heterogeneous nucleation mechanism. The as-deposited thin films, crystallized at 800 deg. C, have a high apparent density, based on a refractive index of ∼ 1.98 determined by single wavelength ellipsometry at 633 nm. The microstructure of the films consists of columnar grains with preferred orientation as determined by X-ray diffraction and transmission electron microscopy. The resistivity, measured by the four point probe method, is ∼ 2 x 10 -3 Ω cm prior to post-deposition treatments

  6. Deposition of indium tin oxide thin films by cathodic arc ion plating

    International Nuclear Information System (INIS)

    Yang, M.-H.; Wen, J.-C.; Chen, K.-L.; Chen, S.-Y.; Leu, M.-S.

    2005-01-01

    Indium tin oxide (ITO) thin films have been deposited by cathodic arc ion plating (CAIP) using sintered oxide target as the source material. In an oxygen atmosphere of 200 deg. C, ITO films with a lowest resistivity of 2.2x10 -4 Ω-cm were obtained at a deposition rate higher than 450 nm/min. The carrier mobility of ITO shows a maximum at some medium pressures. Although morphologically ITO films with a very fine nanometer-sized structure were observed to possess the lowest resistivity, more detailed analyses based on X-ray diffraction are attempted to gain more insight into the factors that govern electron mobility in this investigation

  7. Room temperature synthesis of indium tin oxide nanotubes with high precision wall thickness by electroless deposition

    Directory of Open Access Journals (Sweden)

    Mario Boehme

    2011-02-01

    Full Text Available Conductive nanotubes consisting of indium tin oxide (ITO were fabricated by electroless deposition using ion track etched polycarbonate templates. To produce nanotubes (NTs with thin walls and small surface roughness, the tubes were generated by a multi-step procedure under aqueous conditions. The approach reported below yields open end nanotubes with well defined outer diameter and wall thickness. In the past, zinc oxide films were mostly preferred and were synthesized using electroless deposition based on aqueous solutions. All these methods previously developed, are not adaptable in the case of ITO nanotubes, even with modifications. In the present work, therefore, we investigated the necessary conditions for the growth of ITO-NTs to achieve a wall thickness of around 10 nm. In addition, the effects of pH and reductive concentrations for the formation of ITO-NTs are also discussed.

  8. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, N G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Gudage, Y G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Ghosh, A [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Vyas, J C [Technical and Prototype Engineering Division, Bhabha Atomic Research Center, Trombay, Mumbai (MS) (India); Singh, F [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Tripathi, A [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India)

    2008-02-07

    We have examined the effect of swift heavy ions using 100 MeV Au{sup 8+} ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10{sup -4} {omega} cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications.

  9. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    International Nuclear Information System (INIS)

    Deshpande, N G; Gudage, Y G; Ghosh, A; Vyas, J C; Singh, F; Tripathi, A; Sharma, Ramphal

    2008-01-01

    We have examined the effect of swift heavy ions using 100 MeV Au 8+ ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10 -4 Ω cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications

  10. Fractal morphological analysis of Bacteriorhodopsin (bR) layers deposited onto Indium Tin Oxide (ITO) electrodes

    International Nuclear Information System (INIS)

    Vengadesh, P.; Muniandy, S.V.; Majid, W.H. Abd.

    2009-01-01

    Uniform Bacteriorhodopsin layers for the purpose of fabricating Bacteriorhodopsin-based biosensors were prepared by allowing drying of the layers under a constant electric field. To properly observe and understand the 'electric field effect' on the protein Bacteriorhodopsin, the electric and non-electric field influenced Bacteriorhodopsin layers prepared using a manual syringe-deposition method applied onto Indium Tin Oxide electrodes were structurally investigated using Scanning Electron Microscopy and Atomic Force Microscopy. The results yield obvious morphological differences between the electric and non-electric field assisted Bacteriorhodopsin layers and brings to attention the occurrence of the so-called 'coffee-ring' effect in the latter case. We applied stochastic fractal method based on the generalized Cauchy process to describe the morphological features surrounding the void. Fractal dimension is used to characterize the local regularity of the Bacteriorhodopsin clusters and the correlation exponent is used to describe the long-range correlation between the clusters. It is found that the Bacteriorhodopsin protein tends to exhibit with strong spatial correlation in the presence of external electric field compared to in absence of the electric field. Long-range correlation in the morphological feature may be associated to the enhancement of aggregation process of Bacteriorhodopsin protein in the presence of electric field, thereby inhibiting the formation of the so-called 'coffee-ring' effect. As such, the observations discussed in this work suggest some amount of control of surface uniformity when forming layers.

  11. Structural, optical and electrical peculiarities of r.f. plasma sputtered indium tin oxide films

    International Nuclear Information System (INIS)

    Boycheva, Sylvia; Sytchkova, Anna Krasilnikova; Grilli, Maria Luisa; Piegari, Angela

    2007-01-01

    In this work the influence of the deposition conditions on the structural, electrical and optical properties of the ITO films was studied. Films were deposited by r.f. plasma sputtering technique in Ar and varying Ar + O 2 gas mixtures, with and without substrate heating. Transmittance and reflectance of the films were measured in the range 350-2500 nm; the refractive index (n) and the extinction coefficient (k) were calculated by the spectral data simulation. The sheet resistance of the films was measured by four-point probe method. X-ray diffraction analysis was performed to study the texture of the films. Threshold behaviour was observed in the optical and electrical properties of ITO films deposited in Ar + O 2 atmosphere at a certain oxygen concentration determined by a fix combination of all other deposition conditions. A schematic diagram for the change of the film properties versus composition was suggested, which explains the obtained results

  12. Development of nanocrystalline Indium Tin Oxide (ITO) thin films using RF-magnetron sputtering

    International Nuclear Information System (INIS)

    Tamilselvan, N.; Thilakan, Periyasamy

    2013-01-01

    ITO thin films have been deposited on glass substrate using RF Magnetron puttering Technique from the pre-synthesized ITO target. The sputtering parameters such as the deposition temperature, gas composition and the RF power densities were varied. X-ray diffraction studies revealed that the crystallization of the films is mostly depending on the RF power density and substrate temperature. Crystallized films exhibited a change in the preferred orientation from (111) plane to (100) plane at specific conditions such as high RF power density and high oxygen mixing to the plasma. Change in the film microstructure and a shift in the optical bandgap were recorded from the SEM and UV-Visible measurements respectively. (author)

  13. Surface morphology modelling for the resistivity analysis of low temperature sputtered indium tin oxide thin films on polymer substrates

    International Nuclear Information System (INIS)

    Yin Xuesong; Tang Wu; Weng Xiaolong; Deng Longjiang

    2009-01-01

    Amorphous or weakly crystalline indium tin oxide (ITO) thin film samples have been prepared on polymethylmethacrylate and polyethylene terephthalate substrates by RF-magnetron sputtering at a low substrate temperature. The surface morphological and electrical properties of the ITO layers were measured by atomic force microscopy (AFM) and a standard four-point probe measurement. The effect of surface morphology on the resistivity of ITO thin films was studied, which presented some different variations from crystalline films. Then, a simplified film system model, including the substrate, continuous ITO layer and ITO surface grain, was proposed to deal with these correlations. Based on this thin film model and the AFM images, a quadratic potential was introduced to simulate the characteristics of the ITO surface morphology, and the classical Kronig-Penney model, the semiconductor electrical theory and the modified Neugebauer-Webb model were used to expound the detailed experimental results. The modelling equation was highly in accord with the experimental variations of the resistivity on the characteristics of the surface morphology.

  14. Influence of the sputtering system's vacuum level on the properties of indium tin oxide films

    International Nuclear Information System (INIS)

    Zebaze Kana, M.G.; Centurioni, E.; Iencinella, D.; Summonte, C.

    2006-01-01

    The influence of the chamber residual pressure level in the radio frequency magnetron sputtering process on the electrical, optical and structural properties of indium thin oxide (ITO) is investigated. Several ITO films were deposited at various residual pressure levels on Corning glass using In 2 O 3 :SnO 2 target in argon atmosphere and without the addition of oxygen partial pressure. It is found that a very good vacuum is associated to metallic films and results in less transparent ITO films, with some powder formation on the surface. On the contrary highly transparent and conducting films are produced at a higher residual pressure. The best deposition conditions are addressed for ITO films as transparent conducting oxide layers in silicon heterojunction solar cells. Using the optimal vacuum level for ITO fabrication, a maximum short circuit current of 36.6 mA/cm 2 and a fill-factor of 0.78 are obtained for solar cells on textured substrates with a device conversion efficiency of 16.2%

  15. Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system

    International Nuclear Information System (INIS)

    Bae, J.W.; Kim, J.S.; Yeom, G.Y.

    2001-01-01

    Indium-tin-oxide (ITO) thin films were deposited on polycarbonate (PC) substrates at low temperatures (<90 deg. C) by a dual ion beam assisted e-beam evaporation system, where one gun (gun 1) is facing ITO flux and the other gun (gun 2) is facing the substrate. In this experiment, effects of rf power and oxygen flow rate of ion gun 2 on the electrical and optical properties of depositing ITO thin films were investigated. At optimal deposition conditions, ITO thin films deposited on the PC substrates larger than 20 cmx20 cm showed the sheet resistance of less than 40 Ω/sq., the optical transmittance of above 90%, and the uniformity of about 5%

  16. Electrophoretic deposition (EPD) of multi-walled carbon nano tubes (MWCNT) onto indium-tin-oxide (ITO) glass substrates

    International Nuclear Information System (INIS)

    Mohd Roslie Ali; Shahrul Nizam Mohd Salleh

    2009-01-01

    Full text: Multi-Walled Carbon Nano tubes (MWCNT) were deposited onto Indium-Tin-Oxide (ITO)-coated glass substrates by introducing the use of Electrophoretic Deposition (EPD) as the method. The Multi-Walled Carbon Nano tubes (MWCNT) were dispersed ultrasonically in ethanol and sodium hydroxide (NaOH) to form stable suspension. The addition of Sodium Hydroxide in ethanol can stabilize the suspension, which was very important step before the deposition take place. Two substrates of Indium-Tin-Oxide(ITO)-coated glass placed in parallel facing each other (conductive side) into the suspension. The deposition occurs at room temperature, which the distance fixed at 1 cm between both electrodes and the voltage level applied was fixed at 400 V, respectively. The deposition time also was fixed at 30 minutes. The deposited ITO-Glass with Multi-Walled Carbon Nano tubes (MWCNT) will be characterized using Scanning Electron Microscope (SEM), Atomic Force Microscope (AFM), and Raman Microscope. The images of SEM shows that the Multi -Walled Carbon Nano tubes (MWCNT) were distributed uniformly onto the surface of ITO-Glass. The deposited ITO-Glass with Multi-Walled Carbon Nano tubes (MWCNT) could be the potential material in various practical applications such as field emission devices, fuel cells, and super capacitors. Electrophoretic deposition (EPD) technique was found to be an efficient technique in forming well distribution of Multi-Walled Carbon Nano tubes (MWCNT) onto ITO-Glass substrates, as proved in characterization methods, in which the optimum conditions will play the major role. (author)

  17. Influence of indium tin oxide electrodes deposited at room temperature on the properties of organic light-emitting devices

    International Nuclear Information System (INIS)

    Satoh, Toshikazu; Fujikawa, Hisayoshi; Taga, Yasunori

    2005-01-01

    The influence of indium tin oxide (ITO) electrodes deposited at room temperature (ITO-RT) on the properties of organic light-emitting devices (OLEDs) has been studied. The OLED on the ITO-RT showed an obvious shorter lifetime and higher operating voltage than that on the conventional ITO electrode deposited at 573 K. The result of an in situ x-ray photoelectron spectroscopy analysis of the ITO electrode and the organic layer suggested that many of the hydroxyl groups that originate in the amorphous structure of the ITO-RT electrode oxidize the organic layer. The performance of the OLED on the ITO-RT is able to be explained by the oxidation of the organic layer

  18. Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2017-06-01

    Full Text Available This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2, indium tin oxide (ITO, and a hybrid layer of SiO2/ITO applied using Radio frequency (RF sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52% exceeded that of cells with a SiO2 antireflective coating (21.92%. Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating.

  19. Indium tin oxide thin films by bias magnetron rf sputtering for heterojunction solar cells application

    International Nuclear Information System (INIS)

    Zhao Liang; Zhou Zhibin; Peng Hua; Cui Rongqiang

    2005-01-01

    In this investigation ITO thin films were prepared by bias magnetron rf sputtering technique at substrate temperature of 180 deg. C and low substrate-target distance for future a-Si:H/c-Si heterojunction (HJ) solar cells application. Microstructure, surface morphology, electrical and optical properties of these films were characterized and analyzed. The effects of ion bombardments on growing ITO films are well discussed. XRD analysis revealed a change in preferential orientation of polycrystalline structure from (2 2 2) to (4 0 0) plane with the increase of negative bias voltage. Textured surface were observed on AFM graphs of samples prepared at high negative bias. Hall measurements showed that the carrier density and Hall mobility of these ITO films are sensitive to the bias voltage applied. We attributed these effects to the sensitivity of energy of Ar + ions bombarding on growing films to the applied bias voltage in our experiments. At last the figure of merit was calculated to evaluate the quality of ITO thin films, the results of which show that sample prepared at bias voltage of -75 V is good to be used in HJ cells application

  20. Electrochemical deposition of gold-platinum alloy nanoparticles on an indium tin oxide electrode and their electrocatalytic applications

    Energy Technology Data Exchange (ETDEWEB)

    Song Yan; Ma Yuting; Wang Yuan [Department of Chemistry, Soochow University, Suzhou, Jiangsu 215123 (China); Di Junwei, E-mail: djw@suda.edu.c [Department of Chemistry, Soochow University, Suzhou, Jiangsu 215123 (China); Tu Yifeng [Department of Chemistry, Soochow University, Suzhou, Jiangsu 215123 (China)

    2010-07-01

    Gold-platinum (Au-Pt) hybrid nanoparticles (Au-PtNPs) were successfully deposited on an indium tin oxide (ITO) surface using a direct electrochemical method. The resulting nanoparticles were characterized by scanning electron microscopy (SEM), UV-vis spectroscopy, X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and electrochemical methods. It was found that the size of the Au-PtNPs depends on the number of electrodeposition cycles. Au-PtNPs obtained by 20 electrodeposition cycles had a cauliflower-shaped structure with an average diameter of about 60 nm. These Au-PtNPs exhibited alloy properties. Electrochemical measurements showed that the charge transfer resistivity was significantly decreased for the Au-PtNPs/ITO electrode. Additionally, the Au-PtNPs displayed an electrocatalytic activity for nitrite oxidation and oxygen reduction. The Au-PtNPs/ITO electrodes reported herein could possibly be used as electrocatalysts and sensors.

  1. Quantitative evaluation of high-energy O− ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

    International Nuclear Information System (INIS)

    Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

    2017-01-01

    O − ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O − energy distribution is measured with spatial dependence. Directional high-energy O − ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O − ion is measured. From absolute evaluation of the heat flux from O − ion, O − particle flux in order of 10 18 m −2 s −1 is evaluated at a distance of 10 cm from the target. Production yield of O − ion on the ITO target by one Ar + ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10 −3 as the minimum value. (paper)

  2. Quantitative evaluation of high-energy O- ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

    Science.gov (United States)

    Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

    2017-11-01

    O- ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O- energy distribution is measured with spatial dependence. Directional high-energy O- ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O- ion is measured. From absolute evaluation of the heat flux from O- ion, O- particle flux in order of 1018 m-2 s-1 is evaluated at a distance of 10 cm from the target. Production yield of O- ion on the ITO target by one Ar+ ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10-3 as the minimum value.

  3. Effect of thermal processing on silver thin films of varying thickness deposited on zinc oxide and indium tin oxide

    International Nuclear Information System (INIS)

    Sivaramakrishnan, K.; Ngo, A. T.; Alford, T. L.; Iyer, S.

    2009-01-01

    Silver films of varying thicknesses (25, 45, and 60 nm) were deposited on indium tin oxide (ITO) on silicon and zinc oxide (ZnO) on silicon. The films were annealed in vacuum for 1 h at different temperatures (300-650 deg. C). Four-point-probe measurements were used to determine the resistivity of the films. All films showed an abrupt change in resistivity beyond an onset temperature that varied with thickness. Rutherford backscattering spectrometry measurements revealed agglomeration of the Ag films upon annealing as being responsible for the resistivity change. X-ray pole figure analysis determined that the annealed films took on a preferential texturing; however, the degree of texturing was significantly higher in Ag/ZnO/Si than in Ag/ITO/Si samples. This observation was accounted for by interface energy minimization. Atomic force microscopy (AFM) measurements revealed an increasing surface roughness of the annealed films with temperature. The resistivity behavior was explained by the counterbalancing effects of increasing crystallinity and surface roughness. Average surface roughness obtained from the AFM measurements were also used to model the agglomeration of Ag based on Ostwald ripening theory

  4. Deposition of low sheet resistance indium tin oxide directly onto functional small molecules

    KAUST Repository

    Franklin, Joseph B.

    2014-11-01

    © 2014 Elsevier B.V. All rights reserved. We outline a methodology for depositing tin-doped indium oxide (ITO) directly onto semiconducting organic small molecule films for use as a transparent conducting oxide top-electrode. ITO films were grown using pulsed laser deposition onto copper(II)phthalocyanine (CuPc):buckminsterfullerene (C60) coated substrates. The ITO was deposited at a substrate temperature of 150 °C over a wide range of background oxygen pressures (Pd) (0.67-10 Pa). Deposition at 0.67 ≤ Pd ≤ 4.7 Pa led to delamination of the organic films owing to damage induced by the high energy ablated particles, at intermediate 4.7 ≤ Pd < 6.7 Pa pressures macroscopic cracking is observed in the ITO. Increasing Pd further, ≥ 6.7 Pa, supports the deposition of continuous, polycrystalline and highly transparent ITO films without damage to the CuPc:C60. The free carrier concentration of ITO is strongly influenced by Pd; hence growth at > 6.7 Pa induces a significant decrease in conductivity; with a minimum sheet resistance (Rs) of 145 /□ achieved for 300 nm thick ITO films. To reduce the Rs a multi-pressure deposition was implemented, resulting in the formation of polycrystalline, highly transparent ITO with an Rs of - 20/□ whilst maintaining the inherent functionality and integrity of the small molecule substrate.

  5. Deposition of low sheet resistance indium tin oxide directly onto functional small molecules

    KAUST Repository

    Franklin, Joseph B.; Fleet, Luke R.; Burgess, Claire H.; McLachlan, Martyn A.

    2014-01-01

    © 2014 Elsevier B.V. All rights reserved. We outline a methodology for depositing tin-doped indium oxide (ITO) directly onto semiconducting organic small molecule films for use as a transparent conducting oxide top-electrode. ITO films were grown using pulsed laser deposition onto copper(II)phthalocyanine (CuPc):buckminsterfullerene (C60) coated substrates. The ITO was deposited at a substrate temperature of 150 °C over a wide range of background oxygen pressures (Pd) (0.67-10 Pa). Deposition at 0.67 ≤ Pd ≤ 4.7 Pa led to delamination of the organic films owing to damage induced by the high energy ablated particles, at intermediate 4.7 ≤ Pd < 6.7 Pa pressures macroscopic cracking is observed in the ITO. Increasing Pd further, ≥ 6.7 Pa, supports the deposition of continuous, polycrystalline and highly transparent ITO films without damage to the CuPc:C60. The free carrier concentration of ITO is strongly influenced by Pd; hence growth at > 6.7 Pa induces a significant decrease in conductivity; with a minimum sheet resistance (Rs) of 145 /□ achieved for 300 nm thick ITO films. To reduce the Rs a multi-pressure deposition was implemented, resulting in the formation of polycrystalline, highly transparent ITO with an Rs of - 20/□ whilst maintaining the inherent functionality and integrity of the small molecule substrate.

  6. Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

    Science.gov (United States)

    Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

    2012-09-01

    In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

  7. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

    Science.gov (United States)

    Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

    2017-01-01

    The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

  8. Indium tin oxide surface smoothing by gas cluster ion beam

    CERN Document Server

    Song, J H; Choi, W K

    2002-01-01

    CO sub 2 cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surfaces and thus to attain highly smooth surfaces. CO sub 2 monomer ions are also bombarded on the ITO surfaces at the same acceleration voltage to compare sputtering phenomena. From the atomic force microscope results, the irradiation of monomer ions makes the hillocks sharper and the surfaces rougher from 1.31 to 1.6 nm in roughness. On the other hand, the irradiation of CO sub 2 cluster ions reduces the height of hillocks and planarize the ITO surfaces as smooth as 0.92 nm in roughness. This discrepancy could be explained by large lateral sputtering yield of the cluster ions and re-deposition of sputtered particles by the impact of the cluster ions on surfaces.

  9. Highly conducting and transparent sprayed indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Rami, M.; Benamar, E.; Messaoudi, C.; Sayah, D.; Ennaoui, A. (Faculte des Sciences, Rabat (Morocco). Lab. de Physique des Materiaux)

    1998-03-01

    Indium tin oxide (ITO) has a wide range of applications in solar cells (e.g. by controlling the resistivity, we can use low conductivity ITO as buffer layer and highly conducting ITO as front contact in thin films CuInS[sub 2] and CuInSe[sub 2] based solar cells) due to its wide band gap (sufficient to be transparent) in both visible and near infrared range, and high carrier concentrations with metallic conduction. A variety of deposition techniques such as reactive electron beam evaporation, DC magnetron sputtering, evaporation, reactive thermal deposition, and spray pyrolysis have been used for the preparation of undoped and tin doped indium oxide. This latter process which makes possible the preparation of large area coatings has attracted considerable attention due to its simplicity and large scale with low cost fabrication. It has been used here to deposit highly transparent and conducting films of tin doped indium oxide onto glass substrates. The electrical, optical and structural properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrates. X-ray diffraction patterns have shown that deposited films are polycrystalline without second phases and have preferred orientation [400]. INdium tin oxide layers with small resistivity value around 7.10[sup -5] [omega].cm and transmission coefficient in the visible and near IR range of about 85-90% have been easily obtained. (authors) 13 refs.

  10. Electrochemical pulsed deposition of platinum nanoparticles on indium tin oxide/polyethylene terephthalate as a flexible counter electrode for dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Wei, Yu-Hsuan; Chen, Chih-Sheng; Ma, Chen-Chi M.; Tsai, Chuen-Horng; Hsieh, Chien-Kuo

    2014-01-01

    In this study, a pulsed-mode electrochemical deposition (Pulse-ECD) technique was employed to deposit platinum nanoparticles (PtNPs) on the indium tin oxide/polyethylene terephthalate (ITO/PET) substrate as a flexible counter electrode for dye-sensitized solar cells (DSSCs). The characteristic properties of the Pulse-ECD PtNPs were prepared and compared to the traditional (electron beam) Pt film. The surface morphologies of the PtNPs were examined by field emission scanning electron microscopy (FE-SEM) and the atomic force microscope (AFM). The FE-SEM results showed that our PtNPs were deposited uniformly on the ITO/PET flexible substrates via the Pulse-ECD technique. The AFM results indicated that the surface roughness of the pulsed PtNPs influenced the power conversion efficiency (PCE) of DSSCs, due to the high specific surface area of PtNPs which enhanced the catalytic activities for the reduction (I 3 − to I − ) of redox electrolyte. In combination with a N719 dye-sensitized TiO 2 working electrode and an iodine-based electrolyte, the DSSCs with the PtNPs flexible counter electrode showed a PCE of 4.3% under the illumination of AM 1.5 (100 mW cm −2 ). The results demonstrated that the Pulse-ECD PtNPs are good candidate for flexible DSSCs. - Highlights: • We used indium tin oxide/polyethylene terephthalate as a flexible substrate. • We utilized pulse electrochemical deposition to deposit platinum nanoparticles. • We synthesized a flexible counter electrode for dye-sensitized solar cell (DSSC). • The power conversion efficiency of DSSC was measured to be 4.3%

  11. Fabricate heterojunction diode by using the modified spray pyrolysis method to deposit nickel-lithium oxide on indium tin oxide substrate.

    Science.gov (United States)

    Wu, Chia-Ching; Yang, Cheng-Fu

    2013-06-12

    P-type lithium-doped nickel oxide (p-LNiO) thin films were deposited on an n-type indium tin oxide (ITO) glass substrate using the modified spray pyrolysis method (SPM), to fabricate a transparent p-n heterojunction diode. The structural, optical, and electrical properties of the p-LNiO and ITO thin films and the p-LNiO/n-ITO heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, Hall effect measurement, and current-voltage (I-V) measurements. The nonlinear and rectifying I-V properties confirmed that a heterojunction diode characteristic was successfully formed in the p-LNiO/n-ITO (p-n) structure. The I-V characteristic was dominated by space-charge-limited current (SCLC), and the Anderson model demonstrated that band alignment existed in the p-LNiO/n-ITO heterojunction diode.

  12. Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Dan; Tang, Xiaohong, E-mail: exhtang@ntu.edu.sg, E-mail: wangk@sustc.edu.cn; Li, Xianqiang [OPTIMUS, Photonics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wang, Kai, E-mail: exhtang@ntu.edu.sg, E-mail: wangk@sustc.edu.cn [Department of Electrical & Electronic Engineering, South University of Science and Technology of China, 1088 Xueyuan Avenue, Shenzhen 518055 (China); Olivier, Aurelien [CINTRA UMI 3288, School of Electrical and Electronic Engineering, Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, 637553 Singapore (Singapore)

    2016-03-07

    After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and Au catalyst size. 40 nm induced GaAs NWs are observed with zinc-blende structure. Based on vapor-liquid-solid mechanism, a kinetic model is used to deepen our understanding of the incorporation of growth species and the role of various growth parameters in tuning the GaAs NW growth rate. Thermally activated behavior has been investigated by variation of growth temperature. Activation energies of 40 nm Au catalyst induced NWs are calculated at different trimethylgallium (TMGa) molar flow rates about 65 kJ/mol. The GaAs NWs growth rates increase with TMGa molar flow rates whereas the growth rates are almost independent of growth time. Due to Gibbs-Thomson effect, the GaAs NW growth rates increase with Au nanoparticle size at different temperatures. Critical radius is calculated as 2.14 nm at the growth condition of 430 °C and 1.36 μmol/s TMGa flow rate. It is also proved experimentally that Au nanoparticle below the critical radius such as 2 nm cannot initiate the growth of NWs on ITO. This theoretical and experimental growth parameters investigation enables great controllability over GaAs NWs grown on transparent conductive substrate where the methodology can be expanded to other III–V material NWs and is critical for potential hybrid solar cell application.

  13. Advanced device for testing the electrical behavior of conductive coatings on flexible polymer substrates under oscillatory bending: comparison of coatings of sputtered indium-tin oxide and poly3,4ethylenedioxythiophene

    International Nuclear Information System (INIS)

    Königer, Tobias; Münstedt, Helmut

    2008-01-01

    A special device was designed and set up to investigate the electrical behavior of conductive layers on flexible substrates under oscillatory bending. The resistance of conductive coatings can be measured during various oscillatory bending conditions. The bending radius, the amplitude and the frequency can be set to well-defined values. Furthermore, the setup allows us to apply tensile or compressive stress to the coating as well as both stresses alternately. Thus, various bending loads occurring in printable electronics applications can be simulated to investigate the electrical reliability of conductive coatings. In addition, it is possible to simulate different environmental conditions during oscillatory bending by running the device in an environmental chamber. Characterizations of the electrical behavior under oscillatory bending were carried out on commercially available polyethyleneterephthalate (PET) films sputtered with indium-tin oxide (ITO) and coated with poly3,4ethylenedioxythiophene (PEDOT). For coatings of sputtered ITO, a dramatic increase of the resistance is observed for bending radii smaller than 14 mm due to cracks spanning the whole sample width. The higher the amplitude, the more pronounced is the increase of the resistance. Coatings of PEDOT show high stability under oscillatory bending. There is no change in resistance observed for all bending radii and amplitudes applied over a large number of cycles

  14. Dye-sensitized solar cell architecture based on indium-tin oxide nanowires coated with titanium dioxide

    International Nuclear Information System (INIS)

    Joanni, Ednan; Savu, Raluca; Sousa Goes, Marcio de; Bueno, Paulo Roberto; Nei de Freitas, Jilian; Nogueira, Ana Flavia; Longo, Elson; Varela, Jose Arana

    2007-01-01

    A new architecture for dye-sensitized solar cells is employed, based on a nanostructured transparent conducting oxide protruding from the substrate, covered with a separate active oxide layer. The objective is to decrease electron-hole recombination. The concept was tested by growing branched indium-tin oxide nanowires on glass using pulsed laser deposition followed by deposition of a sputtered titanium dioxide layer covering the wires. The separation of charge generation and charge transport functions opens many possibilities for dye-sensitized solar cell optimization

  15. Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Li, Ying-Tse; Huang, Shi-Da; Yu, Hau-Wei [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Pu, Nen-Wen, E-mail: nwpuccit@gmail.com [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan (China); Liang, Shih-Chang [Materials & Electro-Optics Research Division, National Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan (China)

    2015-11-01

    Highlights: • Ti-doped indium tin oxide (ITO) films were deposited by DC magnetron sputtering. • Optimal optoelectronic properties were achieved at a sputtering power of 100 W. • Resistivity = 3.2 × 10{sup −4} Ω-cm without substrate heating or post growth annealing. • Mean visible and NIR transmittances of 83 and 80%, respectively, were achieved. • Efficient batteries (11.3%) were fabricated by applying ITO:Ti to CIGS solar cells. - Abstract: In this study, Ti-doped indium tin oxide (ITO:Ti) thin films were fabricated using a DC-magnetron sputtering deposition method. The thin films were grown without introducing oxygen or heating the substrate, and no post-growth annealing was performed after fabrication. The thickness of the ITO:Ti thin films (350 nm) was controlled while increasing the sputtering power from 50 to 150 W. According to the results, the optimal optoelectronic properties were observed in ITO:Ti thin films grown at a sputtering power of 100 W, yielding a reduced resistivity of 3.2 × 10{sup −4} Ω-cm and a mean high transmittance of 83% at wavelengths ranging from 400 to 800 nm. The optimal ITO:Ti thin films were used to fabricate a Cu(In,Ga)Se{sub 2} solar cell that exhibited a photoelectric conversion efficiency of 11.3%, a short-circuit current density of 33.1 mA/cm{sup 2}, an open-circuit voltage of 0.54 V, and a fill factor of 0.64.

  16. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

    Directory of Open Access Journals (Sweden)

    Nen-Wen Pu

    2015-09-01

    Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  17. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

    Science.gov (United States)

    Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

    2015-09-21

    : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  18. Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

    Science.gov (United States)

    Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

    2010-08-01

    Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

  19. Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

    Science.gov (United States)

    Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

    2012-01-01

    A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

  20. Effect of barrier layers on the properties of indium tin oxide thin films on soda lime glass substrates

    International Nuclear Information System (INIS)

    Lee, Jung-Min; Choi, Byung-Hyun; Ji, Mi-Jung; An, Yong-Tae; Park, Jung-Ho; Kwon, Jae-Hong; Ju, Byeong-Kwon

    2009-01-01

    In this paper, the electrical, structural and optical properties of indium tin oxide (ITO) films deposited on soda lime glass (SLG) haven been investigated, along with high strain point glass (HSPG) substrate, through radio frequency magnetron sputtering using a ceramic target (In 2 O 3 :SnO 2 , 90:10 wt.%). The ITO films deposited on the SLG show a high electrical resistivity and structural defects compared with those deposited on HSPG due to the Na ions from the SLG diffusing to the ITO film by annealing. However, these properties can be improved by intercalating a barrier layer of SiO 2 or Al 2 O 3 between the ITO film and the SLG substrate. SIMS analysis has confirmed that the barrier layer inhibits the Na ion's diffusion from the SLG. In particular, the ITO films deposited on the Al 2 O 3 barrier layer, show better properties than those deposited on the SiO 2 barrier layer.

  1. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    Science.gov (United States)

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  2. Pulsed Nd:YAG laser deposition of indium tin oxide thin films in different gases and organic light emitting device applications

    International Nuclear Information System (INIS)

    Yong, T.Y.; Tou, T.Y.; Yow, H.K.; Safran, G.

    2008-01-01

    The microstructures, electrical and optical properties of indium-doped tin oxide (ITO) films, deposited on glass substrates in different background gases by a pulsed Nd:YAG laser, were characterized. The optimal pressure for obtaining the lowest resistivity in ITO thin film is inversely proportional to the molecular weight of the background gases, namely the argon (Ar), oxygen (O 2 ), nitrogen (N 2 ) and helium (He). While substrate heating to 250 deg. C decreased the ITO resistivity to -4 Ω cm, obtaining the optical transmittance of higher than 90% depended mainly on the background gas pressure for O 2 and Ar. Obtaining the lowest ITO resistivity, however, did not beget a high optical transmittance for ITO deposition in N 2 and He. Scanning electron microscope pictures show distinct differences in microstructures due to the background gas: nanostructures when using Ar and N 2 but polycrystalline for using O 2 and He. The ITO surface roughness varied with the deposition distance. The effects on the molecularly doped, single-layer organic light emitting device (OLED) operation and performance were also investigated. Only ITO thin films prepared in O 2 and Ar are suitable for the fabrication OLED with performance comparable to that fabricated on the commercially available, magnetron-sputtered ITO

  3. Correlative scanning electron and confocal microscopy imaging of labeled cells coated by indium-tin-oxide

    KAUST Repository

    Rodighiero, Simona

    2015-03-22

    Confocal microscopy imaging of cells allows to visualize the presence of specific antigens by using fluorescent tags or fluorescent proteins, with resolution of few hundreds of nanometers, providing their localization in a large field-of-view and the understanding of their cellular function. Conversely, in scanning electron microscopy (SEM), the surface morphology of cells is imaged down to nanometer scale using secondary electrons. Combining both imaging techniques have brought to the correlative light and electron microscopy, contributing to investigate the existing relationships between biological surface structures and functions. Furthermore, in SEM, backscattered electrons (BSE) can image local compositional differences, like those due to nanosized gold particles labeling cellular surface antigens. To perform SEM imaging of cells, they could be grown on conducting substrates, but obtaining images of limited quality. Alternatively, they could be rendered electrically conductive, coating them with a thin metal layer. However, when BSE are collected to detect gold-labeled surface antigens, heavy metals cannot be used as coating material, as they would mask the BSE signal produced by the markers. Cell surface could be then coated with a thin layer of chromium, but this results in a loss of conductivity due to the fast chromium oxidation, if the samples come in contact with air. In order to overcome these major limitations, a thin layer of indium-tin-oxide was deposited by ion-sputtering on gold-decorated HeLa cells and neurons. Indium-tin-oxide was able to provide stable electrical conductivity and preservation of the BSE signal coming from the gold-conjugated markers. © 2015 Wiley Periodicals, Inc.

  4. Three-dimensional electrodes for dye-sensitized solar cells: synthesis of indium-tin-oxide nanowire arrays and ITO/TiO2 core-shell nanowire arrays by electrophoretic deposition

    International Nuclear Information System (INIS)

    Wang, H-W; Ting, C-F; Hung, M-K; Chiou, C-H; Liu, Y-L; Liu Zongwen; Ratinac, Kyle R; Ringer, Simon P

    2009-01-01

    Dye-sensitized solar cells (DSSCs) show promise as a cheaper alternative to silicon-based photovoltaics for specialized applications, provided conversion efficiency can be maximized and production costs minimized. This study demonstrates that arrays of nanowires can be formed by wet-chemical methods for use as three-dimensional (3D) electrodes in DSSCs, thereby improving photoelectric conversion efficiency. Two approaches were employed to create the arrays of ITO (indium-tin-oxide) nanowires or arrays of ITO/TiO 2 core-shell nanowires; both methods were based on electrophoretic deposition (EPD) within a polycarbonate template. The 3D electrodes for solar cells were constructed by using a doctor-blade for coating TiO 2 layers onto the ITO or ITO/TiO 2 nanowire arrays. A photoelectric conversion efficiency as high as 4.3% was achieved in the DSSCs made from ITO nanowires; this performance was better than that of ITO/TiO 2 core-shell nanowires or pristine TiO 2 films. Cyclic voltammetry confirmed that the reaction current was significantly enhanced when a 3D ITO-nanowire electrode was used. Better separation of charge carriers and improved charge transport, due to the enlarged interfacial area, are thought to be the major advantages of using 3D nanowire electrodes for the optimization of DSSCs.

  5. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    KAUST Repository

    Mora Cordova, Angel; Khan, Kamran; El Sayed, Tamer

    2014-01-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show

  6. Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

    International Nuclear Information System (INIS)

    Li Yali; Li Chunyang; He Deyan; Li Junshuai

    2009-01-01

    We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ∼4.6 x 10 -4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ∼1.21 x 10 21 cm -3 and a lower mobility of ∼11.4 cm 2 V -1 s -1 . More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.

  7. Fabrication and performance analysis of 4-sq cm indium tin oxide/InP photovoltaic solar cells

    Science.gov (United States)

    Gessert, T. A.; Li, X.; Phelps, P. W.; Coutts, T. J.; Tzafaras, N.

    1991-01-01

    Large-area photovoltaic solar cells based on direct current magnetron sputter deposition of indium tin oxide (ITO) into single-crystal p-InP substrates demonstrated both the radiation hardness and high performance necessary for extraterrestrial applications. A small-scale production project was initiated in which approximately 50 ITO/InP cells are being produced. The procedures used in this small-scale production of 4-sq cm ITO/InP cells are presented and discussed. The discussion includes analyses of performance range of all available production cells, and device performance data of the best cells thus far produced. Additionally, processing experience gained from the production of these cells is discussed, indicating other issues that may be encountered when large-scale productions are begun.

  8. RF-superimposed DC and pulsed DC sputtering for deposition of transparent conductive oxides

    International Nuclear Information System (INIS)

    Stowell, Michael; Mueller, Joachim; Ruske, Manfred; Lutz, Mark; Linz, Thomas

    2007-01-01

    Transparent conductive oxide films are widely used materials for electronic applications such as flat panel displays and solar cells. The superposition of DC and pulsed DC power by a certain fraction of RF power was applied to deposit indium tin oxide films. This technique allows an additional tuning of different parameters relevant to film growth, and yields high quality films even under kinetically limited conditions. A long-term stable RF/DC process could be realized by using different combinations of standard power supply components, which includes a fully reliable arc handling system for both the RF and DC generators. The effectiveness of the arc handling system is illustrated by the current and voltage behavior recorded for actual arcing events. The resistivity of indium tin oxide films is strongly influenced by the respective sputtering mode. The best resistivity values of 145-148 μΩ cm were obtained by RF-superimposed pulsed DC sputtering at a pulse frequency between 100 and 200 kHz and a substrate temperature as low as 140 deg. C. In addition, the films were extremely smooth with a surface roughness of 1-2.5 nm

  9. Structural, optical and electrical characteristics of ITO thin films deposited by sputtering on different polyester substrates

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.

    2008-01-01

    Indium tin oxide (ITO) thin films were deposited by sputtering at room temperature on glass and different polyester substrates; namely polyarylate (PA), polycarbonate (PC) and polyethylene terephtalate (PET). The influence of the substrate on the structural, optical and electrical characteristics of the ITO layers was investigated. The sputtered films exhibited crystallization in the (2 2 2) orientation, with higher mean crystallite size and lower structural distortion onto PET than onto PA, PC or glass substrates. ITO films deposited onto PET showed also higher band gap energy, higher carrier concentration and lower resistivity than the ITO layers onto the other tested substrates. These optical and electrical characteristics have been related to the structural distortion that was found dependent on the specific polyester substrate

  10. Sputter deposited gallium doped ZnO for TCO applications

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Marc; Kronenberger, Achim; Polity, Angelika; Meyer, Bruno [I. Physikalisches Institut, Justus Liebig Universitaet Giessen (Germany); Blaesing, Juergen; Krost, Alois [FNW/IEP/AHE, Otto-von-Guericke Universitaet Magdeburg (Germany)

    2010-07-01

    Transparent conducting oxides to be used for flat panel or display applications should exhibit low electrical resistivity in line with a high optical transmission in the visible spectral range. Today indium-tin-oxide is the material which meets these requirements best. However, the limited availability of indium makes it useful to search for alternatives and ZnO doped with group III elements are promising candidates. While the Al doping in high concentrations causes problems due to the formation of insulating Al-oxides, Gallium related oxides are typically n-type conducting wide band gap semiconductors. Therefore we deposited Gallium doped ZnO thin films on quartz and sapphire substrates by radio frequency magnetron sputtering with a ZnO/Ga{sub 2}O{sub 3}(3at%) composite target. The substrate temperature and the oxygen flow during the sputtering process were varied to optimise the layer properties. Introducing oxygen to the sputtering gas allowed to vary the resistivity of the films by three orders of magnitude from about 1 {omega}cm down to less than 1 m{omega}cm.

  11. Interfacial reactions between indium tin oxide and triphenylamine tetramer layers induced by photoirradiation

    International Nuclear Information System (INIS)

    Satoh, Toshikazu; Fujikawa, Hisayoshi; Yamamoto, Ichiro; Murasaki, Takanori; Kato, Yoshifumi

    2008-01-01

    The effects of photoirradiation on the interfacial chemical reactions between indium tin oxide (ITO) films and layers of triphenylamine tetramer (TPTE) were investigated by using in situ x-ray photoelectron spectroscopy (XPS). Thin TPTE layers deposited onto sputter-deposited ITO films were irradiated with violet light-emitting diodes (peak wavelength: 380 nm). Shifts in the peak positions of spectral components that originated in the organic layer toward the higher binding-energy side were observed in the XPS profiles during the early stages of irradiation. No further peak shifts were observed after additional irradiation. An increase in the ratio of the organic component in the O 1s spectra was also observed during the photoirradiation. The ratio of the organic component increased in proportion to the cube root of the irradiation time. These results suggest that photoirradiation induces an increase in the height of the carrier injection barrier at the interface between TPTE and ITO in the early stages of the irradiation, possibly due to the rapid diffusion controlled formation and growth of an oxidized TPTE layer, which is considered to act as a high resistance layer

  12. Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Machinaga, Hironobu; Ueda, Eri; Mizuike, Atsuko; Takeda, Yuuki; Shimokita, Keisuke; Miyazaki, Tsukasa

    2014-01-01

    Effects of the annealing temperature on mechanical durability of indium-tin oxide (ITO) thin films deposited on polyethylene terephthalate (PET) substrates were investigated. The ITO films were annealed at the range from 150 °C to 195 °C after the DC sputtering deposition for the production of polycrystalline ITO layers on the substrates. The onset strains of cracking in the annealed ITO films were evaluated by the uniaxial stretching tests with electrical resistance measurements during film stretching. The results indicate that the onset strain of cracking in the ITO film is clearly increased by increasing the annealing temperature. The in-situ measurements of the inter-planer spacing of the (222) plane in the crystalline ITO films during film stretching by using synchrotron radiation strongly suggest that the large compressive stress in the ITO film increases the onset strain of cracking in the film. X-ray stress analyses of the annealed ITO films and thermal mechanical analyses of the PET substrates also clarifies that the residual compressive stress in the ITO film is enhanced with increasing the annealing temperature due to the considerably larger shrinkage of the PET substrate. - Highlights: • Indium-tin oxide (ITO) films were deposited on polyethylene terephthalate (PET). • Mechanical durability of the ITO is improved by high temperature post-annealing. • The shrinkage in the PET increases with rising the post-annealing temperature. • The shrinkage of the PET enhances the compressive stress in the ITO film. • Large compressive stress in the ITO film may improve its mechanical durability

  13. Enhancement of organic light-emitting device performances with Hf-doped indium tin oxide anodes

    International Nuclear Information System (INIS)

    Chen, T.-H.; Liou, Y.; Wu, T.J.; Chen, J.Y.

    2004-01-01

    We have enhanced the luminance and the power efficiency of organic light-emitting devices with Hf-doped indium tin oxide (ITO) anodes instead of a CuPc layer. The Hf-doped ITO layer with a thickness of 15 nm was deposited on top of the ITO anode. Less than 10 mol. % of Hf was doped in ITO films by adjusting the sputtering rates of both sources. The highest work function of the Hf-doped ITO layers was 5.4 eV at the Hf concentrations about 10 mol. %. The driving voltages of the device have been reduced by 1 V. A luminance of 1000 cd/m 2 at 7 mA/cm 2 , a current efficiency of 14 cd/A, and a power efficiency of 6 lm/W at 6 mA/cm 2 have been achieved in the device with a 4 mol. % Hf-doped ITO layer (work function=5.2 eV). In general, the performance was about 50% better than the device with a CuPc buffer layer

  14. Effect of cerium doping on the electrical properties of ultrathin indium tin oxide films for application in touch sensors

    International Nuclear Information System (INIS)

    Kang, Saewon; Cho, Sanghyun; Song, Pungkeun

    2014-01-01

    The electrical and microstructure properties of cerium doped indium tin oxide (ITO:Ce) ultrathin films were evaluated to assess their potential application in touch sensors. 10 to 150-nm ITO and ITO:Ce films were deposited on glass substrates (200 °C) by DC magnetron sputtering using different ITO targets (doped with CeO 2 : 0, 1, 3, 5 wt.%). ITO:Ce (doped with CeO 2 : 3 wt.%) films with thickness < 25 nm showed lower resistivity than ITO. This lower resistivity was accompanied by a significant increase in the Hall mobility despite a decrease in crystallinity. In addition, the surface morphology and wetting properties improved with increasing Ce concentration. This is related to an earlier transition from an island structure to continuous film formation caused by an increase in the initial nucleation density. - Highlights: • 10 to 150-nm InSnO 2 (ITO) and ITO:Ce thin films were deposited by sputtering. • ITO:Ce films with thickness < 25 nm showed lower resistivity than ITO. • Hall mobility was strongly affected by initial film formation. • Surface morphology and wetting property improved with increasing Ce concentration. • Such behavior is related to an earlier transition to continuous film formation

  15. Preparation of indium tin oxide anodes using energy filtrating technique for top-emitting organic light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Zhaoyong, Wang [School of Physical Engineering and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); School of Mathematics and Physics, Henan Urban Construction University, Pingdingshan 467036 (China); Ning, Yao, E-mail: yaoning@zzu.edu.cn [School of Physical Engineering and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Changbao, Han; Xing, Hu [School of Physical Engineering and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2014-01-01

    Indium tin oxide (ITO) anodes were deposited by an improved magnetron sputtering technique (energy filtrating magnetron sputtering technique, EFMS) for top-emitting organic light-emitting diodes (TOLEDs). The phases, surface morphologies and optical properties were examined by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM) and spectroscopic ellipsometer. The sheet resistances were measured by the sheet resistance meter. The electrical properties were tested by the Hall measurement system. The electro-optic characteristics were examined by a special home-made measurement system. Results indicated that ITO anode deposited by EFMS had a more uniform and smoother surface with smaller grains. ITO film was prepared with the electrical property of the lowest resistivity (4.56 × 10{sup −4} Ω cm), highest carrier density (6.48 × 10{sup 20} cm{sup −3}) and highest carrier mobility (21.1 cm{sup 2}/V/s). The average transmissivity of the ITO film was 87.0% in the wavelength range of 400–800 nm. The TOLEDs based on this ITO anode had a lower turn-on voltage of 2 V (>0.02 mA/cm{sup 2}), higher current density of 58.4 mA/cm{sup 2} at 30 V, higher current efficiency of 1.374 cd/A and higher luminous efficiency of 0.175 lm/W. The possible mechanism of the technique was discussed in detail.

  16. Characterization of lead zirconate titanate (PZT)--indium tin oxide (ITO) thin film interface

    International Nuclear Information System (INIS)

    Sreenivas, K.; Sayer, M.; Laursen, T.; Whitton, J.L.; Pascual, R.; Johnson, D.J.; Amm, D.T.

    1990-01-01

    In this paper the interface between ultrathin sputtered lead zirconate titanate (PZT) films and a conductive electrode (indium tin oxide-ITO) is investigated. Structural and compositional changes at the PZT-ITO interface have been examined by surface analysis and depth profiling techniques of glancing angle x-ray diffraction, Rutherford backscattering (RBS), SIMS, Auger electron spectroscopy (AES), and elastic recoil detection analysis (ERDA). Studies indicate significant interdiffusion of lead into the underlying ITP layer and glass substrate with a large amount of residual stress at the interface. Influence of such compositional deviations at the interface is correlated to an observed thickness dependence in the dielectric properties of PZT films

  17. Design, synthesis, thin film deposition and characterization of new indium tin oxide anode functionalization/hole transport organic materials and their application to high performance organic light-emitting diodes

    Science.gov (United States)

    Huang, Qinglan

    The primary goals of this dissertation were to understand the physical and chemical aspects of organic light-emitting diode (OLED) fundamentals, develop new materials as well as device structures, and enhance OLED electroluminescent (EL) response. Accordingly, this dissertation analyzes the relative effects of indium tin oxide (ITO) anode-hole transporting layer (HTL) contact vs. the intrinsic HTL material properties on OLED EL response. Two siloxane-based HTL materials, 4,4'-bis[(4″ -trichlorosilylpropyl-1″-naphthylphenylamino)biphenyl (NPB-Si2) and 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPD-Si2) have thereby been designed, synthesized and covalently bound to ITO surface. They afford a 250% increase in luminance and ˜50% reduction in turn-on voltage vs. comparable 4,4'-bis(1-naphthylphenylamino)biphenyl (NPB) HTL-based devices. These results suggest new strategies for developing OLED HTL structures, with focus on the anode-HTL contact. Furthermore, archetypical OLED device structures have been refined by simultaneously incorporating the TPD-Si2 layer and a hole- and exciton-blocking/electron transport layer (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) in tris(8-hydroxyquinolato)aluminum(III) and tetrakis(2-methyl-8-hydroxyquinolinato)borate-based OLEDs. The refined device structures lead to high performance OLEDs such as green-emitting OLEDs with maximum luminance (Lmax) ˜ 85,000 cd/m2, power and forward external quantum efficiencies (eta p and etaext) as high as 15.2 lm/W and 4.4 +/- 0.5%, respectively, and blue-emitting OLEDs with Lmax 30,000 cd/m 2, and ˜5.0 lm/W and 1.6 +/- 0.2% etap and eta ext, respectively. The high performance is attributed to synergistically enhanced hole/electron injection and recombination efficiency. In addition, molecule-scale structure effects at ITO anode-HTL interfaces have been systematically probed via a self-assembly approach. A series of silyltriarylamine precursors differing in aryl group and

  18. A direct method to measure the fracture toughness of indium tin oxide thin films on flexible polymer substrates

    International Nuclear Information System (INIS)

    Chang, Rwei-Ching; Tsai, Fa-Ta; Tu, Chin-Hsiang

    2013-01-01

    This work presents a straightforward method to measure the fracture toughness of thin films deposited on flexible substrates. A 200 nm thick indium tin oxide (ITO) thin film is deposited on a 188 μm thick terephthalate (PET) substrate by a radio frequency magnetron sputtering machine. Using nanoindentation to induce brittle fracture on the ITO thin films, the energy release is calculated from integrating the resulting load–depth curve. An approach that directly measures the fracture toughness of thin films deposited on flexible substrates is proposed. A comparison shows that the results of the proposed method agree well with those of other reports. Furthermore, in order to improve the toughness of the ITO thin films, a copper interlayer is added between the ITO thin film and PET substrate. It shows that the fracture toughness of the ITO thin film deposited on the copper interlayer is higher than that of the one without the interlayer, which agrees well with the critical load tested by micro scratch. Further observations on optical and electric performances are also discussed in this work. - Highlights: • A straightforward method to measure the film's toughness • Directly using the load-depth curve of nanoindentation • The toughness is consistent with the critical load tested by micro scratch. • Interlayers can improve the film's toughness. • Optical and electric performances are also discussed

  19. Switchable Super-Hydrophilic/Hydrophobic Indium Tin Oxide (ITO) Film Surfaces on Reactive Ion Etching (RIE) Textured Si Wafer.

    Science.gov (United States)

    Kim, Hwa-Min; Litao, Yao; Kim, Bonghwan

    2015-11-01

    We have developed a surface texturing process for pyramidal surface features along with an indium tin oxide (ITO) coating process to fabricate super-hydrophilic conductive surfaces. The contact angle of a water droplet was less than 5 degrees, which means that an extremely high wettability is achievable on super-hydrophilic surfaces. We have also fabricated a super-hydrophobic conductive surface using an additional coating of polytetrafluoroethylene (PTFE) on the ITO layer coated on the textured Si surface; the ITO and PTFE films were deposited by using a conventional sputtering method. We found that a super-hydrophilic conductive surface is produced by ITO coated on the pyramidal Si surface (ITO/Si), with contact angles of approximately 0 degrees and a resistivity of 3 x 10(-4) Ω x cm. These values are highly dependent on the substrate temperature during the sputtering process. We also found that the super-hydrophobic conductive surface produced by the additional coating of PTFE on the pyramidal Si surface with an ITO layer (PTFE/ITO/Si) has a contact angle of almost 160 degrees and a resistivity of 3 x 10(-4) Ω x cm, with a reflectance lower than 9%. Therefore, these processes can be used to fabricate multifunctional features of ITO films for switchable super-hydrophilic and super-hydrophobic surfaces.

  20. Polycrystalline Mn-alloyed indium tin oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Schmidt, Heidemarie; Xu, Qingyu; Vinnichenko, Mykola; Kolitsch, Andreas; Helm, Manfred; Iacomi, Felicia

    2008-01-01

    Magnetic ITO films are interesting for integrating ITO into magneto-optoelectronic devices. We investigated n-conducting indium tin oxide (ITO) films with different Mn doping concentration which have been grown by chemical vapour deposition using targets with the atomic ratio In:Sn:Mn=122:12:0,114:12:7, and 109:12:13. The average film roughness ranges between 30 and 50 nm and XRD patterns revealed a polycrystalline structure. Magnetotransport measurements revealed negative magnetoresistance for all the samples, but high field positive MR can be clearly observed at 5 K with increasing Mn doping concentration. Spectroscopic ellipsometry (SE) has been used to prove the existence of midgap states in the Mn-alloyed ITO films revealing a transmittance less than 80%. A reasonable model for the ca. 250 nm thick Mn-alloyed ITO films has been developed to extract optical constants from SE data below 3 eV. Depending on the Mn content, a Lorentz oscillator placed between 1 and 2 eV was used to model optical absorption below the band gap

  1. Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate

    International Nuclear Information System (INIS)

    Han, H.; Adams, Daniel; Mayer, J.W.; Alford, T.L.

    2005-01-01

    Indium tin oxide (ITO) thin films, on polyethylene napthalate (PEN) of both good electrical and optical properties were obtained by radio-frequency sputtering. The optoelectronic properties of the ITO films on PEN substrate were evaluated in terms of the oxygen content and the surface morphology. Rutherford backscattering spectrometry analysis was used to determine the oxygen content in the film. Hall-effect measurements were used to evaluate the dependence of electrical properties on oxygen content. The results showed that the resistivity of the ITO film increases with increasing oxygen content. For an oxygen content of 1.6x10 18 -2.48x10 18 atoms/cm 2 , the resistivity varied from 0.38x10 -2 to 1.86x10 -2 Ω cm. Typical resistivities were about ∼10 -3 Ω cm. UV-Vis spectroscopy and atomic force microscopy measurements were used to determine the optical transmittance and surface roughness of ITO films, respectively. Optical transmittances of ∼85% were obtained for the ITO thin films. Our results revealed that substrate roughness were translated onto the deposited ITO thin layers. The ITO surface roughness influences both the optical and electrical properties of the thin films. For a 125 μm PEN substrate the roughness is 8.4 nm, whereas it is 3.2 nm for 200 μm substrate thicknesses. The optical band gap is about 3.15 eV for all ITO film and is influenced by the polymer substrate. A model is proposed that the optical transmittance in the visible region is governed by the carrier concentration in the ITO thin films

  2. Electrical and optical properties of thin indium tin oxide films produced by pulsed laser ablation in oxygen or rare gas atmospheres

    DEFF Research Database (Denmark)

    Thestrup, B.; Schou, Jørgen; Nordskov, A.

    1999-01-01

    Films of indium tin oxide (ITO) have been produced in different background gases by pulsed laser deposition (PLD). The Films deposited in rare gas atmospheres on room temperature substrates were metallic, electrically conductive, but had poor transmission of visible light. For substrate temperatu......Films of indium tin oxide (ITO) have been produced in different background gases by pulsed laser deposition (PLD). The Films deposited in rare gas atmospheres on room temperature substrates were metallic, electrically conductive, but had poor transmission of visible light. For substrate...

  3. Parametrization of optical properties of indium-tin-oxide thin films by spectroscopic ellipsometry: Substrate interfacial reactivity

    Science.gov (United States)

    Losurdo, M.; Giangregorio, M.; Capezzuto, P.; Bruno, G.; de Rosa, R.; Roca, F.; Summonte, C.; Plá, J.; Rizzoli, R.

    2002-01-01

    Indium-tin-oxide (ITO) films deposited by sputtering and e-gun evaporation on both transparent (Corning glass) and opaque (c-Si, c-Si/SiO2) substrates and in c-Si/a-Si:H/ITO heterostructures have been analyzed by spectroscopic ellipsometry (SE) in the range 1.5-5.0 eV. Taking the SE advantage of being applicable to absorbent substrate, ellipsometry is used to determine the spectra of the refractive index and extinction coefficient of the ITO films. The effect of the substrate surface on the ITO optical properties is focused and discussed. To this aim, a parametrized equation combining the Drude model, which considers the free-carrier response at the infrared end, and a double Lorentzian oscillator, which takes into account the interband transition contribution at the UV end, is used to model the ITO optical properties in the useful UV-visible range, whatever the substrate and deposition technique. Ellipsometric analysis is corroborated by sheet resistance measurements.

  4. Influence of Continuous and Discontinuous Depositions on Properties of Ito Films Prepared by DC Magnetron Sputtering

    Science.gov (United States)

    Aiempanakit, K.; Rakkwamsuk, P.; Dumrongrattana, S.

    Indium tin oxide (ITO) films were deposited on glass substrate without external heating by DC magnetron sputtering with continuous deposition of 800 s (S1) and discontinuous depositions of 400 s × 2 times (S2), 200 s × 4 times (S3) and 100 s × 8 times (S4). The structural, surface morphology, optical transmittance and electrical resistivity of ITO films were measured by X-ray diffraction, atomic force microscope, spectrophotometer and four-point probe, respectively. The deposition process of the S1 condition shows the highest target voltage due to more target poisoning occurrence. The substrate temperature of the S1 condition increases with the saturation curve of the RC charging circuit while other conditions increase and decrease due to deposition steps as DC power turns on and off. Target voltage and substrate temperature of ITO films decrease when changing the deposition conditions from S1 to S2, S3 and S4, respectively. The preferential orientation of ITO films were changed from dominate (222) plane to (400) plane with the increasing number of deposition steps. The ITO film for the S4 condition shows the lowest electrical resistivity of 1.44 × 10-3 Ω·cm with the highest energy gap of 4.09 eV and the highest surface roughness of 3.43 nm. These results were discussed from the point of different oxygen occurring on the surface ITO target between the sputtering processes which affected the properties of ITO films.

  5. Toward Plastic Smart Windows: Optimization of Indium Tin Oxide Electrodes for the Synthesis of Electrochromic Devices on Polycarbonate Substrates.

    Science.gov (United States)

    Laurenti, Marco; Bianco, Stefano; Castellino, Micaela; Garino, Nadia; Virga, Alessandro; Pirri, Candido F; Mandracci, Pietro

    2016-03-01

    Plastic smart windows are becoming one of the key elements in view of the fabrication of inexpensive, lightweight electrochromic (EC) devices to be integrated in the new generation of high-energy-efficiency buildings and automotive applications. However, fabricating electrochromic devices on polymer substrates requires a reduction of process temperature, so in this work we focus on the development of a completely room-temperature deposition process aimed at the preparation of ITO-coated polycarbonate (PC) structures acting as transparent and conductive plastic supports. Without providing any substrate heating or surface activation pretreatments of the polymer, different deposition conditions are used for growing indium tin oxide (ITO) thin films by the radiofrequency magnetron sputtering technique. According to the characterization results, the set of optimal deposition parameters is selected to deposit ITO electrodes having high optical transmittance in the visible range (∼90%) together with low sheet resistance (∼8 ohm/sq). The as-prepared ITO/PC structures are then successfully tested as conductive supports for the fabrication of plastic smart windows. To this purpose, tungsten trioxide thin films are deposited by the reactive sputtering technique on the ITO/PC structures, and the resulting single electrode EC devices are characterized by chronoamperometric experiments and cyclic voltammetry. The fast switching response between colored and bleached states, together with the stability and reversibility of their electrochromic behavior after several cycling tests, are considered to be representative of the high quality of the EC film but especially of the ITO electrode. Indeed, even if no adhesion promoters, additional surface activation pretreatments, or substrate heating were used to promote the mechanical adhesion among the electrode and the PC surface, the observed EC response confirmed that the developed materials can be successfully employed for the

  6. Molecular dynamics and experimental studies on deposition mechanisms of ion beam sputtering

    International Nuclear Information System (INIS)

    Fang, T.-H.; Chang, W.-J.; Lin, C.-M.; Lien, W.-C.

    2008-01-01

    Molecular dynamics (MD) simulation and experimental methods are used to study the deposition mechanism of ionic beam sputtering (IBS), including the effects of incident energy, incident angle and deposition temperature on the growth process of nickel nanofilms. According to the simulation, the results showed that increasing the temperature of substrate decreases the surface roughness, average grain size and density. Increasing the incident angle increases the surface roughness and the average grain size of thin film, while decreasing its density. In addition, increasing the incident energy decreases the surface roughness and the average grain size of thin film, while increasing its density. For the cases of simulation, with the substrate temperature of 500 K, normal incident angle and 14.6 x 10 -17 J are appropriate, in order to obtain a smoother surface, a small grain size and a higher density of thin film. From the experimental results, the surface roughness of thin film deposited on the substrates of Si(1 0 0) and indium tin oxide (ITO) decreases with the increasing sputtering power, while the thickness of thin film shows an approximately linear increase with the increase of sputtering power

  7. Reactive sputter deposition

    CERN Document Server

    Mahieu, Stijn

    2008-01-01

    In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

  8. Optical Detection of Ketoprofen by Its Electropolymerization on an Indium Tin Oxide-Coated Optical Fiber Probe.

    Science.gov (United States)

    Bogdanowicz, Robert; Niedziałkowski, Paweł; Sobaszek, Michał; Burnat, Dariusz; Białobrzeska, Wioleta; Cebula, Zofia; Sezemsky, Petr; Koba, Marcin; Stranak, Vitezslav; Ossowski, Tadeusz; Śmietana, Mateusz

    2018-04-27

    In this work an application of optical fiber sensors for real-time optical monitoring of electrochemical deposition of ketoprofen during its anodic oxidation is discussed. The sensors were fabricated by reactive magnetron sputtering of indium tin oxide (ITO) on a 2.5 cm-long core of polymer-clad silica fibers. ITO tuned in optical properties and thickness allows for achieving a lossy-mode resonance (LMR) phenomenon and it can be simultaneously applied as an electrode in an electrochemical setup. The ITO-LMR electrode allows for optical monitoring of changes occurring at the electrode during electrochemical processing. The studies have shown that the ITO-LMR sensor’s spectral response strongly depends on electrochemical modification of its surface by ketoprofen. The effect can be applied for real-time detection of ketoprofen. The obtained sensitivities reached over 1400 nm/M (nm·mg −1 ·L) and 16,400 a.u./M (a.u.·mg −1 ·L) for resonance wavelength and transmission shifts, respectively. The proposed method is a valuable alternative for the analysis of ketoprofen within the concentration range of 0.25⁻250 μg mL −1 , and allows for its determination at therapeutic and toxic levels. The proposed novel sensing approach provides a promising strategy for both optical and electrochemical detection of electrochemical modifications of ITO or its surface by various compounds.

  9. Preparation of Janus Particles and Alternating Current Electrokinetic Measurements with a Rapidly Fabricated Indium Tin Oxide Electrode Array.

    Science.gov (United States)

    Chen, Yu-Liang; Jiang, Hong-Ren

    2017-06-23

    This article provides a simple method to prepare partially or fully coated metallic particles and to perform the rapid fabrication of electrode arrays, which can facilitate electrical experiments in microfluidic devices. Janus particles are asymmetric particles that contain two different surface properties on their two sides. To prepare Janus particles, a monolayer of silica particles is prepared by a drying process. Gold (Au) is deposited on one side of each particle using a sputtering device. The fully coated metallic particles are completed after the second coating process. To analyze the electrical surface properties of Janus particles, alternating current (AC) electrokinetic measurements, such as dielectrophoresis (DEP) and electrorotation (EROT)- which require specifically designed electrode arrays in the experimental device- are performed. However, traditional methods to fabricate electrode arrays, such as the photolithographic technique, require a series of complicated procedures. Here, we introduce a flexible method to fabricate a designed electrode array. An indium tin oxide (ITO) glass is patterned by a fiber laser marking machine (1,064 nm, 20 W, 90 to 120 ns pulse-width, and 20 to 80 kHz pulse repetition frequency) to create a four-phase electrode array. To generate the four-phase electric field, the electrodes are connected to a 2-channel function generator and to two invertors. The phase shift between the adjacent electrodes is set at either 90° (for EROT) or 180° (for DEP). Representative results of AC electrokinetic measurements with a four-phase ITO electrode array are presented.

  10. Influence of indium-tin oxide surface structure on the ordering and coverage of carboxylic acid and thiol monolayers

    International Nuclear Information System (INIS)

    Cerruti, Marta; Rhodes, Crissy; Losego, Mark; Efremenko, Alina; Maria, Jon-Paul; Fischer, Daniel; Franzen, Stefan; Genzer, Jan

    2007-01-01

    This paper analyses the variability of self-assembled monolayers (SAMs) formation on ITO depending on the substrate surface features. In particular, we report on the formation of carboxylic acid- and thiol-based SAMs on two lots of commercially prepared indium-tin oxide (ITO) thin films. Contact angle measurements, electrochemical experiments, and near-edge x-ray absorption fine structure (NEXAFS) spectroscopy showed that the quality of monolayers formed differed substantially between the two ITO batches. Only one of the two ITO substrates was capable of forming well-organized thiol- and carboxylic acid-based SAMs. In order to rationalize these observations, atomic force microscopy and x-ray diffraction analyses were carried out, and SAMs were prepared on ITO substrates fabricated by sputtering in our laboratories. An attempt was made to influence the film microstructure and surface morphology by varying substrate temperatures during ITO deposition. Good-quality thiol and carboxylic acid SAMs were obtained on one of the ITO substrates prepared in-house. While our characterization could not single out conclusively one specific parameter in ITO surface structure that could be responsible for good SAMs formation, we could point out homogeneous surface morphology as a relevant factor for the quality of the SAMs. Evidence was also found for ITO crystallographic orientation to be a parameter influencing SAMs organization

  11. Transparent heaters based on solution-processed indium tin oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Im, Kiju [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of); Research Institute of TNB Nanoelec Co. Ltd., Seoul 136-701 (Korea, Republic of); Cho, Kyoungah [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of); Kim, Jonghyun [Research Institute of TNB Nanoelec Co. Ltd., Seoul 136-701 (Korea, Republic of); Kim, Sangsig, E-mail: sangsig@korea.ac.k [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of)

    2010-05-03

    We demonstrate transparent heaters constructed on glass substrates using solution-processed indium tin oxide (ITO) nanoparticles (NPs) and their heating capability. The heat-generating characteristics of the heaters depended significantly on the sintering temperature at which the ITO NPs deposited on a glass substrate by spin-coating were transformed thermally into a solid film. The steady-state temperature of the ITO NP film sintered at 400 {sup o}C was 163 {sup o}C at a bias voltage of 20 V, and the defrosting capability of the film was confirmed by using dry-ice.

  12. Generation of laser-induced periodic surface structures in indium-tin-oxide thin films and two-photon lithography of ma-N photoresist by sub-15 femtosecond laser microscopy for liquid crystal cell application

    Science.gov (United States)

    Klötzer, Madlen; Afshar, Maziar; Feili, Dara; Seidel, Helmut; König, Karsten; Straub, Martin

    2015-03-01

    Indium-tin-oxide (ITO) is a widely used electrode material for liquid crystal cell applications because of its transparency in the visible spectral range and its high electrical conductivity. Important examples of applications are displays and optical phase modulators. We report on subwavelength periodic structuring and precise laser cutting of 150 nm thick indium-tin-oxide films on glass substrates, which were deposited by magnetron reactive DC-sputtering from an indiumtin target in a low-pressure oxygen atmosphere. In order to obtain nanostructured electrodes laser-induced periodic surface structures with a period of approximately 100 nm were generated using tightly focused high-repetition rate sub-15 femtosecond pulsed Ti:sapphire laser light, which was scanned across the sample by galvanometric mirrors. Three-dimensional spacers were produced by multiphoton photopolymerization in ma-N 2410 negative-tone photoresist spin-coated on top of the ITO layers. The nanostructured electrodes were aligned in parallel to set up an electrically switchable nematic liquid crystal cell.

  13. Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Lin, Y.C.; Li, J.Y.; Yen, W.T.

    2008-01-01

    Experiments were conducted using pulse magnetron sputtering (PMS) to deposit transparent conducting indium tin oxide (ITO) thin film onto flexible polyethersulfone (PES) plastic substrates. The thin film microstructure, optoelectronic and residual stress were analyzed using the modulating PMS power, work pressure, pulse frequency, duty cycle and cycle time process parameters. The residual stress of the thin film was determined by scanning electron microscopy (SEM) combined with the Sony equation. The experimental results show that PMS has a lower process temperature, higher deposition rate and lower resistivity compared with the radio frequency process at the same output power. The duty cycle increase produces the optimum optoelectronic characteristics. When the pressure, power, duty cycle and sputter time are increased, the thin film stress will also increase, causing flexural distortion in the PES plastic substrate. When the deposition thickness reaches 1.5 μm, ITO thin film will appear with a distinct split. Under 5 mtorr work pressure, 60 W power, 33 μs duty time and 2 μs pulse reverse time at duty cycle 95%, thin film with an optimized electrical 3.0 x 10 -4 Ω-cm, RMS surface roughness of 0.85 nm and visible region optical transmittance will be achieved with acquisition of over 85%

  14. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    Science.gov (United States)

    Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

    2015-08-01

    Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

  15. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Marsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo, S.; Alcubilla, R.; Bertomeu, J.; Antony, A.

    2014-01-01

    In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. - Highlights: • Zinc promotes the creation of oxygen vacancies in zinc indium tin oxide transistors. • Post deposition annealing in air reduces the density of oxygen. • Density of states reveals a clear peak located at 0.3 eV from the conduction band

  16. Mn-implanted, polycrystalline indium tin oxide and indium oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

    2009-01-01

    Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

  17. Bulk heterojunction formation between indium tin oxide nanorods and CuInS2 nanoparticles for inorganic thin film solar cell applications.

    Science.gov (United States)

    Cho, Jin Woo; Park, Se Jin; Kim, Jaehoon; Kim, Woong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

    2012-02-01

    In this study, we developed a novel inorganic thin film solar cell configuration in which bulk heterojunction was formed between indium tin oxide (ITO) nanorods and CuInS(2) (CIS). Specifically, ITO nanorods were first synthesized by the radio frequency magnetron sputtering deposition method followed by deposition of a dense TiO(2) layer and CdS buffer layer using atomic layer deposition and chemical bath deposition method, respectively. The spatial region between the nanorods was then filled with CIS nanoparticle ink, which was presynthesized using the colloidal synthetic method. We observed that complete gap filling was achieved to form bulk heterojunction between the inorganic phases. As a proof-of-concept, solar cell devices were fabricated by depositing an Au electrode on top of the CIS layer, which exhibited the best photovoltaic response with a V(oc), J(sc), FF, and efficiency of 0.287 V, 9.63 mA/cm(2), 0.364, and 1.01%, respectively.

  18. Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

    KAUST Repository

    Lee, Kyu-Sung

    2012-05-22

    A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive layer of poly (3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester, a power conversion efficiency of 3.67% was obtained, a value comparable to devices having sputtered ITO electrode. Surface roughness and optical efficiency are improved when using the mixed TiO2−x–ITO electrode. The consumption of less indium allows for lower fabrication cost of such mixed thin filmelectrode.

  19. Surface passivation function of indium-tin-oxide-based nanorod structural sensors

    International Nuclear Information System (INIS)

    Lin, Tzu-Shun; Lee, Ching-Ting; Lee, Hisn-Ying; Lin, Chih-Chien

    2012-01-01

    Employing self-shadowing traits of an oblique-angle electron-beam deposition system, various indium tin oxide (ITO) nanorod arrays were deposited on a silicon substrate and used as extended-gate field-effect-transistor (EGFET) pH sensors. The length and morphology of the deposited ITO nanorod arrays could be changed and controlled under different deposition conditions. The ITO nanorod structural EGFET pH sensors exhibited high sensing performances owing to the larger sensing surface area. The sensitivity of the pH sensors with 150-nm-length ITO nanorod arrays was 53.96 mV/pH. By using the photoelectrochemical treatment of the ITO nanorod arrays, the sensitivity of the pH sensors with 150-nm-length passivated ITO nanorod arrays was improved to 57.21 mV/pH.

  20. Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substrates

    International Nuclear Information System (INIS)

    Guillén, C; Herrero, J

    2008-01-01

    Transparent and conductive indium tin oxide (ITO) films with thickness between 0.2 and 0.7 µm were deposited by sputtering at room temperature on glass and polyethylene terephthalate (PET) substrates. All films were polycrystalline, with crystallite size increasing and lattice distortion decreasing when the film thickness was increased. Besides, transmission in the near-infrared region is found to be decreasing and carrier concentration increasing when the film thickness was increased. For the same thickness, the lattice distortion is slightly lower and the carrier concentration higher for the layers grown on PET substrates. A direct relationship between the lattice distortion and the free carrier concentration has been established, applying to the films grown on glass and plastic substrates. By adjusting ITO coating thickness, sheet resistance below 15 Ω sq −1 and average visible transmittance about 90% have been achieved by sputtering at room temperature

  1. Structural, optical and electrical properties of indium tin oxide thin films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Benamar, E.; Rami, M.; Messaoudi, C.; Sayah, D.; Ennaoui, A. [Deptartmento de Physique, Laboratoire de Physique des Materiaux, Faculte des Sciences, BP 1014, Ave Inb Battouta, Rabat (Morocco)

    1998-11-27

    Spray pyrolysis process has been used to deposit highly transparent and conducting films of tin-doped indium oxide onto glass substrates. The electrical, structural and optical properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrate. The morphology of the surface as a function of the substrate temperature has been studied using atomic force microscopy. XRD has shown that deposited films are polycrystalline without second phases and have a preferred orientation (4 0 0). Indium tin oxide layers with low resistivity values around 4x10{sup -5} {Omega} cm and transmission coefficients in the visible and near-infrared range of about 85-90% have been easily obtained

  2. Fabrication of nickel oxide and Ni-doped indium tin oxide thin films using pyrosol process

    International Nuclear Information System (INIS)

    Nakasa, Akihiko; Adachi, Mami; Usami, Hisanao; Suzuki, Eiji; Taniguchi, Yoshio

    2006-01-01

    Organic light emitting diodes (OLEDs) need indium tin oxide (ITO) anodes with highly smooth surface. The work function of ITO, about 4.8 eV, is generally rather lower than the optimum level for application to OLEDs. In this work, NiO was deposited by pyrosol process on pyrosol ITO film to increase the work function of the ITO for improving the performance of OLEDs. It was confirmed that NiO was successfully deposited on pyrosol ITO film and the NiO deposition increased the work function of pyrosol ITO, using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and atmospheric photoelectron spectroscopy. Furthermore, doping ITO with Ni succeeded in producing the Ni-doped ITO film with high work function and lower sheet resistance

  3. Indium Tin Oxide thin film gas sensors for detection of ethanol vapours

    International Nuclear Information System (INIS)

    Vaishnav, V.S.; Patel, P.D.; Patel, N.G.

    2005-01-01

    Indium Tin Oxide (ITO: In 2 O 3 + 17% SnO 2 ) thin films grown on alumina substrate at 648 K temperatures using direct evaporation method with two gold pads deposited on the top for electrical contacts were exposed to ethanol vapours (200-2500 ppm). The operating temperature of the sensor was optimized. The sensitivity variation of films having different thickness was studied. The sensitivity of the films deposited on Si substrates was studied. The response of the film with MgO catalytic layer on sensitivity and selectivity was observed. A novel approach of depositing thin stimulating layer of various metals/oxides below the ITO film was tried and tested

  4. EGFET pH Sensor Performance Dependence on Sputtered TiO2 Sensing Membrane Deposition Temperature

    Directory of Open Access Journals (Sweden)

    Khairul Aimi Yusof

    2016-01-01

    Full Text Available Titanium dioxide (TiO2 thin films were sputtered by radio frequency (RF magnetron sputtering method and have been employed as the sensing membrane of an extended gate field effect transistor (EGFET for pH sensing detection application. The TiO2 thin films were deposited onto indium tin oxide (ITO coated glass substrates at room temperature and 200°C, respectively. The effect of deposition temperature on thin film properties and pH detection application was analyzed. The TiO2 samples used as the sensing membrane for EGFET pH-sensor and the current-voltage (I-V, hysteresis, and drift characteristics were examined. The sensitivity of TiO2 EGFET sensing membrane was obtained from the transfer characteristic (I-V curves for different substrate heating temperatures. TiO2 thin film sputtered at room temperature achieved higher sensitivity of 59.89 mV/pH compared to the one deposited at 200°C indicating lower sensitivity of 37.60 mV/pH. Moreover the hysteresis and the drift of TiO2 thin film deposited at room temperature showed lower values compared to the one at 200°C. We have also tested the effect of operating temperature on the performance of the EGFET pH-sensing and found that the temperature effect was very minimal.

  5. Sputtering. [as deposition technique in mechanical engineering

    Science.gov (United States)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  6. Electronic structure of the indium tin oxide/nanocrystalline anatase (TiO2)/ruthenium-dye interfaces in dye-sensitized solar cells

    Science.gov (United States)

    Lyon, J. E.; Rayan, M. K.; Beerbom, M. M.; Schlaf, R.

    2008-10-01

    The electronic structure of two interfaces commonly found in dye-sensitized photovoltaic cells based on nanocrystalline anatase TiO2 ("Grätzel cells") was investigated using photoemission spectroscopy (PES). X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS) measurements were carried out on the indium tin oxide (ITO)/TiO2 and the TiO2/cis-bis(isothiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylato)-ruthenium(II)bis-tetrabutylammonium dye ("N719" or "Ruthenium 535-bisTBA") interfaces. Both contacts were investigated using a multistep deposition procedure where the entire structure was prepared in vacuum using electrospray deposition. In between deposition steps the surface was characterized with XPS and UPS resulting in a series of spectra, allowing the determination of the orbital and band lineup at the interfaces. The results of these efforts confirm previous PES measurements on TiO2/dye contacts prepared under ambient conditions, suggesting that ambient contamination might not have significant influence on the electronic structure at the dye/TiO2 interface. The results also demonstrate that there may be a significant barrier for electron injection at the sputtered ITO/TiO2 interface and that this interface should be viewed as a semiconductor heterojunction rather than as metal-semiconductor (Schottky) contact.

  7. Electrochemical synthesis of gold nanoparticles onto indium tin oxide glass and application in biosensors

    Energy Technology Data Exchange (ETDEWEB)

    Hu Yanling; Song Yan; Wang Yuan; Di Junwei, E-mail: djw@suda.edu.cn

    2011-07-29

    A simple one-step method for the electrochemical deposition of gold nanoparticles (GNPs) onto bare indium tin oxide film coated glass substrate without any template or surfactant was investigated. The effect of electrolysis conditions such as potential range, temperature, concentration and deposition cycles were examined. The connectivity of GNPs was analyzed by UV-Vis absorption spectroscopy and scanning electron microscopy. The nanoparticles were found to connect in pairs or to coalesce in larger numbers. The twin GNPs display a transverse and a longitudinal localized surface plasmon resonance (LSPR) band, which is similar to that of gold nanorods. The presence of longitudinal LSPR band correlates with high refractive index sensitivity. Conjugation of the twin-linked GNPs with albumin bovine serum-biotin was employed for the detection of streptavidin as a model based on the specific binding affinity in biotin/streptavidin pairs. The spectrophotometric sensor showed concentration-dependent binding for streptavidin.

  8. Discovery of the calcium, indium, tin, and platinum isotopes

    International Nuclear Information System (INIS)

    Amos, S.; Gross, J.L.; Thoennessen, M.

    2011-01-01

    Currently, twenty-four calcium, thirty-eight indium, thirty-eight tin, and thirty-nine platinum isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented. - Highlights: Documentation of the discovery of all calcium, indium, tin and platinum isotopes. → Summary of author, journal, year, place and country of discovery for each isotope. → Brief description of discovery history of each isotope.

  9. Acid-catalyzed kinetics of indium tin oxide etching

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

    2014-08-28

    We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

  10. Crack density and electrical resistance in indium-tin-oxide/polymer thin films under cyclic loading

    KAUST Repository

    Mora Cordova, Angel

    2014-11-01

    Here, we propose a damage model that describes the degradation of the material properties of indium-tin-oxide (ITO) thin films deposited on polymer substrates under cyclic loading. We base this model on our earlier tensile test model and show that the new model is suitable for cyclic loading. After calibration with experimental data, we are able to capture the stress-strain behavior and changes in electrical resistance of ITO thin films. We are also able to predict the crack density using calibrations from our previous model. Finally, we demonstrate the capabilities of our model based on simulations using material properties reported in the literature. Our model is implemented in the commercially available finite element software ABAQUS using a user subroutine UMAT.[Figure not available: see fulltext.].

  11. Gold nanoparticle arrays directly grown on nanostructured indium tin oxide electrodes: Characterization and electroanalytical application

    International Nuclear Information System (INIS)

    Zhang Jingdong; Oyama, Munetaka

    2005-01-01

    This work describes an improved seed-mediated growth approach for the direct attachment and growth of mono-dispersed gold nanoparticles on nanostructured indium tin oxide (ITO) surfaces. It was demonstrated that, when the seeding procedure of our previously reported seed-mediated growth process on an ITO surface was modified, the density of gold nanospheres directly grown on the surface could be highly improved, while the emergence of nanorods was restrained. By field emission scanning electron microscopy (FE-SEM) and cyclic voltammetry, the growth of gold nanoparticles with increasing growth time on the defect sites of nanostructured ITO surface was monitored. Using a [Fe(China) 6 ] 3- /[Fe(China) 6 ] 4- redox probe, the increasingly facile heterogeneous electron transfer kinetics resulting from the deposition and growth of gold nanoparticle arrays was observed. The as-prepared gold nanoparticle arrays exhibited high catalytic activity toward the electrooxidation of nitric oxide, which could provide electroanalytical application for nitric oxide sensing

  12. Thin porous indium tin oxide nanoparticle films: effects of annealing in vacuum and air

    International Nuclear Information System (INIS)

    Ederth, J.; Hultaaker, A.; Niklasson, G.A.; Granqvist, C.G.; Heszler, P.; Doorn, A.R. van; Jongerius, M.J.; Burgard, D.

    2005-01-01

    Electrical and optical properties were investigated in porous thin films consisting of In 2 O 3 :Sn (indium tin oxide; ITO) nanoparticles. The temperature-dependent resistivity was successfully described by a fluctuation-induced tunneling model, indicating a sample morphology dominated by clusters of ITO nanoparticles separated by insulating barriers. An effective-medium model, including the effect of ionized impurity scattering, was successfully fitted to measured reflectance and transmittance. Post-deposition treatments were carried out at 773 K for 2 h in both air and vacuum. It is shown that vacuum annealing increases either the barrier width or the area between two conducting clusters in the samples and, furthermore, an extra optical absorption occurs close to the band gap. A subsequent air annealing then reduces the effect of the barriers on the electrical properties and diminishes the absorption close to the band gap. (orig.)

  13. Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Kang, Y.M.; Kwon, S.H.; Choi, J.H.; Cho, Y.J.; Song, P.K.

    2010-01-01

    Ce-doped indium tin oxide (ITO:Ce) films were deposited on flexible polyimide substrates by DC magnetron sputtering using ITO targets containing various CeO 2 contents (CeO 2 : 0, 0.5, 3.0, 4.0, 6.0 wt.%) at room temperature and post-annealed at 200 o C. The crystallinity of the ITO films decreased with increasing Ce content, and it led to a decrease in surface roughness. In addition, a relatively small change in resistance in dynamic stress mode was obtained for ITO:Ce films even after the annealing at high temperature (200 o C). The minimum resistivity of the amorphous ITO:Ce films was 3.96 x 10 -4 Ωcm, which was deposited using a 3.0 wt.% CeO 2 doped ITO target. The amorphous ITO:Ce films not only have comparable electrical properties to the polycrystalline films but also have a crystallization temperature > 200 o C. In addition, the amorphous ITO:Ce film showed stable mechanical properties in the bended state.

  14. INFLUENCE OF SUBSTRATE TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF ITO THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING

    OpenAIRE

    BO HE; LEI ZHAO; JING XU; HUAIZHONG XING; SHAOLIN XUE; MENG JIANG

    2013-01-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films grea...

  15. Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

    International Nuclear Information System (INIS)

    Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre

    2011-01-01

    Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl 3 , SnCl 4 and NH 3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ∼ 40-1160 nm. After calcination at 550 o C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.

  16. Cesium-incorporated indium-tin-oxide films for use as a cathode with low work function for a transparent organic light-emitting device

    International Nuclear Information System (INIS)

    Uchida, Takayuki; Mimura, Toshifumi; Ohtsuka, Masao; Otomo, Toshio; Ide, Mieko; Shida, Azusa; Sawada, Yutaka

    2006-01-01

    Transparent organic light-emitting devices (TOLEDs) were successfully fabricated utilizing a novel transparent conducting cathode with low work function. Cesium-incorporated indium-tin-oxide film was deposited on the organic layers with negligible damage by simultaneous operation of RF magnetron sputtering using an ITO target and vacuum evaporation of metallic cesium. Incorporation of cesium in the ITO film was confirmed by XPS analysis. The work function (4.3 eV) determined by photoelectron spectroscopy in air (PESA) was lower than that of 0.3-0.4-eV without cesium-incorporation and stable under the atmospheric environment. The electron injection efficiency of cesium-incorporated ITO cathode in the present transparent OLED fabricated was comparable to that of the previous double-layered structure comprising of ITO cathode and an organic buffer layer (BCP) doped by evaporation of cesium [T. Uchida, S. Kaneta, M. Ichihara, M. Ohtsuka, T. Otomo, D.R. Marx, Jpn. J. Appl. Phys., 44, No. 9 (2005) L282

  17. Electrochromic properties of bipolar pulsed magnetron sputter deposited tungsten–molybdenum oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tai-Nan [Chemical Engineering Division, Institute of Nuclear Energy Research, Taoyuan 325, Taiwan, ROC (China); Lin, Yi Han; Lee, Chin Tan [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China); Han, Sheng [Center of General Education, National Taichung Institute of Technology, Taichung 404, Taiwan, ROC (China); Weng, Ko-Wei, E-mail: kowei@nqu.edu.tw [Department of Electronic Engineering, National Quemoy University, Kinmen 892, Taiwan, ROC (China)

    2015-06-01

    There are great interests in electrochromic technology for smart windows and displays over past decades. In this study, the WMoO{sub x} thin films were deposited onto indium tin oxide glass and silicon substrates by pulsed magnetron sputter system with W and Mo targets. The films were deposited with fixed W target power while the variant parameter of Mo target power in the range 50, 100, 150 and 200 W was investigated. The working pressure was fixed at 1.33 Pa with a gas mixture of Ar (30 sccm) and O{sub 2} (15 sccm). The film thickness increased with the Mo target power. Higher plasma power resulted in a crystalline structure which would reduce the electrochromic property of the film. The influence of plasma powers applied to Mo target on the structural, optical and electrochromic properties of the WMoO{sub x} thin films has been investigated. WMoO{sub x} films grown at Mo target powers less than 100 W were found to be amorphous. The films deposited at 150 W, which is the optimal fabrication condition, exhibit better electrochromic properties with high optical modulation, high coloration efficiency and less color memory effect at wavelength 400, 550 and 800 nm. The improvement resulted from the effect of doping Mo has been tested. The maximum ΔT (%) values are 36.6% at 400 nm, 65.6% at 550 nm, and 66.6% at 800 nm for pure WO{sub 3} film. The addition of Mo content in the WMoO{sub x} films provides better resistance to the short wavelength light source and can be used in the concerned application. - Highlights: • WMoO{sub x} films are deposited by pulsed magnetron sputter with pure W and Mo targets. • Mo addition in WMoO{sub x} provides better resistance to short wavelength light source. • WMoO{sub x} films exhibit electrochemical stability in the cycling test.

  18. Genotoxicity of indium tin oxide by comet test

    Directory of Open Access Journals (Sweden)

    İbrahim Hakkı Ciğerci

    2015-06-01

    Full Text Available Indium tin oxide (ITO is used for liquid crystal display (LCDs, electrochromic displays, flat panel displays, field emission displays, touch or laptop computer screens, cell phones, energy conserving architectural windows, defogging aircraft and automobile windows, heat-reflecting coatings to increase light bulb efficiency, gas sensors, antistatic window coatings, wear resistant layers on glass, nanowires and nanorods because of its unique properties of high electrical conductivity, transparency and mechanical resistance.Genotoxic effects of ITO were investigated on the root cells of Allium cepa by Comet assay. A. cepa roots were treated with the aqueous dispersions of ITO at 5 different concentrations (12.5, 25, 50, 75, and 100 ppm for 4 h. A significant increase in DNA damage was a observed at all concentrations of ITO by Comet assay. These result indicate that ITO exhibit genotoxic activity in A. cepa root meristematic cells.

  19. Gas Sensing Properties of Indium Tin Oxide Nanofibers

    Directory of Open Access Journals (Sweden)

    Shiyou Xu

    2009-11-01

    Full Text Available Indium Tin Oxide (ITO nanofibers were fabricated by the electrospinning process. The morphology and crystal structure of ITO nanofibers were studied by SEM, XRD, and TEM respectively. The results showed that polycrystalline ITO nanofibers with an average diameter of 80 nm were obtained. Sensors based on these nanofibers were fabricated by collecting these nanofibers on the integrated sensor platforms. The ITO nanofiber-based sensors showed very fast and high sensor responses at both room and elevated temperatures for NO2. The ratios of resistance in NO2 over that in air were 5 at room temperature and 34 at the optimal working temperature, respectively. The ITO nanofiber-based sensor can be repeatedly used. The details for the fast, enhanced sensor responses and the optimal temperature were discussed.

  20. Studies on the cross-magnetron effect in the reactive indium tin oxide deposition. Effects of an inhomogeneous plasma distribution on the coating properties in dynamic and static coating by means of a pulsed dual magnetron

    International Nuclear Information System (INIS)

    Kleinhempel, Ronny

    2008-01-01

    In the present thesis the reactive ITO deposition process under application of metallic In:Sn targets is intensively studied. The coating deposition pursues at a symmetric bipolarly pulsed dual magnetron both on resting and moving substrates. The thesis comprehends two partial fields. On the one hand the dynamic deposition process was comprehensively characterized at an near-industry test facility and successfully transformed by means of its physical parameters to an industrial coating facility. On the other hand static depositions were performed. These allow the analysis of the lateral distribution of the functional coating properties. By this a correlation to the lateral distributions of the measured plasma parameters could be elaborated [de

  1. Indium-tin-oxide thin film transistor biosensors for label-free detection of avian influenza virus H5N1

    International Nuclear Information System (INIS)

    Guo, Di; Zhuo, Ming; Zhang, Xiaoai; Xu, Cheng; Jiang, Jie; Gao, Fu; Wan, Qing; Li, Qiuhong; Wang, Taihong

    2013-01-01

    Highlights: ► A highly selective label-free biosensor is established based on indium-tin-oxide thin-film transistors (ITO TFTs). ► AI H5N1 virus was successfully detected through shift in threshold voltage and field-effect mobility of ITO TFT. ► The ITO TFT is applied in biosensor for the first time and shows good reusability and stability. ► Fabrication of the platform is simple with low cost, which is suitable for mass commercial production. -- Abstract: As continuous outbreak of avian influenza (AI) has become a threat to human health, economic development and social stability, it is urgently necessary to detect the highly pathogenic avian influenza H5N1 virus quickly. In this study, we fabricated indium-tin-oxide thin-film transistors (ITO TFTs) on a glass substrate for the detecting of AI H5N1. The ITO TFT is fabricated by a one-shadow-mask process in which a channel layer can be simultaneously self-assembled between ITO source/drain electrodes during magnetron sputtering deposition. Monoclonal anti-H5N1 antibodies specific for AI H5N1 virus were covalently immobilized on the ITO channel by (3-glycidoxypropyl)trimethoxysilane. The introduction of target AI H5N1 virus affected the electronic properties of the ITO TFT, which caused a change in the resultant threshold voltage (V T ) and field-effect mobility. The changes of I D –V G curves were consistent with an n-type field effect transistor behavior affected by nearby negatively charged AI H5N1 viruses. The transistor based sensor demonstrated high selectivity and stability for AI H5N1 virus sensing. The sensor showed linear response to AI H5N1 in the concentrations range from 5 × 10 −9 g mL −1 to 5 × 10 −6 g mL −1 with a detection limit of 0.8 × 10 −10 g mL −1 . Moreover, the ITO TFT biosensors can be repeatedly used through the washing processes. With its excellent electric properties and the potential for mass commercial production, ITO TFTs can be promising candidates for the

  2. Indium-tin-oxide thin film transistor biosensors for label-free detection of avian influenza virus H5N1

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Di; Zhuo, Ming [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Zhang, Xiaoai [State Key Laboratory of Pathogen and Biosecurity, Beijing Institute of Microbiology and Epidemiology, Beijing (China); Xu, Cheng; Jiang, Jie [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Gao, Fu [State Key Laboratory of Pathogen and Biosecurity, Beijing Institute of Microbiology and Epidemiology, Beijing (China); Wan, Qing, E-mail: wanqing7686@hotmail.com [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Li, Qiuhong, E-mail: liqiuhong2004@hotmail.com [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China); Wang, Taihong, E-mail: thwang@hnu.cn [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory for Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082 (China)

    2013-04-22

    Highlights: ► A highly selective label-free biosensor is established based on indium-tin-oxide thin-film transistors (ITO TFTs). ► AI H5N1 virus was successfully detected through shift in threshold voltage and field-effect mobility of ITO TFT. ► The ITO TFT is applied in biosensor for the first time and shows good reusability and stability. ► Fabrication of the platform is simple with low cost, which is suitable for mass commercial production. -- Abstract: As continuous outbreak of avian influenza (AI) has become a threat to human health, economic development and social stability, it is urgently necessary to detect the highly pathogenic avian influenza H5N1 virus quickly. In this study, we fabricated indium-tin-oxide thin-film transistors (ITO TFTs) on a glass substrate for the detecting of AI H5N1. The ITO TFT is fabricated by a one-shadow-mask process in which a channel layer can be simultaneously self-assembled between ITO source/drain electrodes during magnetron sputtering deposition. Monoclonal anti-H5N1 antibodies specific for AI H5N1 virus were covalently immobilized on the ITO channel by (3-glycidoxypropyl)trimethoxysilane. The introduction of target AI H5N1 virus affected the electronic properties of the ITO TFT, which caused a change in the resultant threshold voltage (V{sub T}) and field-effect mobility. The changes of I{sub D}–V{sub G} curves were consistent with an n-type field effect transistor behavior affected by nearby negatively charged AI H5N1 viruses. The transistor based sensor demonstrated high selectivity and stability for AI H5N1 virus sensing. The sensor showed linear response to AI H5N1 in the concentrations range from 5 × 10{sup −9} g mL{sup −1} to 5 × 10{sup −6} g mL{sup −1} with a detection limit of 0.8 × 10{sup −10} g mL{sup −1}. Moreover, the ITO TFT biosensors can be repeatedly used through the washing processes. With its excellent electric properties and the potential for mass commercial production, ITO TFTs

  3. Optimization of nanoparticulate indium tin oxide slurries for the manufacture of ultra-thin indium tin oxide coatings with the slot-die coating process

    International Nuclear Information System (INIS)

    Wegener, M.; Riess, K.; Roosen, A.

    2016-01-01

    This paper deals with the optimization of colloidal processing to achieve suitable nanoparticulate indium tin oxide (ITO) slurries for the production of sub-μm-thin ITO coatings with the slot die coating process. For application in printed electronics these ITO coatings, which are composite films consisting of nanoparticulate ITO and a polymeric binder, should offer high flexibility, transparency and electrical conductivity. To preserve their flexibility, the composite films are not subject to any heat treatment, instead they are used as deposited and dried. To achieve very good transparency and electrical conductivity at the same time, the slurries must exhibit excellent dispersivity to result in a dense particle packing during film formation and drying. To reduce materials costs, films with thicknesses of several 100 nm are of interest. Therefore, the slot-die technique was applied as a fast, pre-dosing technique to produce sub-μm-thin ITO/binder composite films. The resulting ITO/binder films were characterized with regard to their key properties such as total transmission and specific electrical resistance. With the colloidal optimization of ethanol- and water-based nanoparticulate ITO slurries using PVP and PVB as binders, it was possible to achieve films of 250 nm in thickness exhibiting high total transmission of ∝ 93 % and a low specific electrical resistance of ∝ 10 Ω.cm.

  4. Optimization of nanoparticulate indium tin oxide slurries for the manufacture of ultra-thin indium tin oxide coatings with the slot-die coating process

    Energy Technology Data Exchange (ETDEWEB)

    Wegener, M.; Riess, K.; Roosen, A. [Erlangen-Nuremberg Univ., Erlangen (Germany). Dept. of Materials Science, Glass and Ceramics

    2016-07-01

    This paper deals with the optimization of colloidal processing to achieve suitable nanoparticulate indium tin oxide (ITO) slurries for the production of sub-μm-thin ITO coatings with the slot die coating process. For application in printed electronics these ITO coatings, which are composite films consisting of nanoparticulate ITO and a polymeric binder, should offer high flexibility, transparency and electrical conductivity. To preserve their flexibility, the composite films are not subject to any heat treatment, instead they are used as deposited and dried. To achieve very good transparency and electrical conductivity at the same time, the slurries must exhibit excellent dispersivity to result in a dense particle packing during film formation and drying. To reduce materials costs, films with thicknesses of several 100 nm are of interest. Therefore, the slot-die technique was applied as a fast, pre-dosing technique to produce sub-μm-thin ITO/binder composite films. The resulting ITO/binder films were characterized with regard to their key properties such as total transmission and specific electrical resistance. With the colloidal optimization of ethanol- and water-based nanoparticulate ITO slurries using PVP and PVB as binders, it was possible to achieve films of 250 nm in thickness exhibiting high total transmission of ∝ 93 % and a low specific electrical resistance of ∝ 10 Ω.cm.

  5. Surface characterization of sol–gel derived indium tin oxide films on ...

    Indian Academy of Sciences (India)

    Unknown

    , India ... 1. Introduction. Indium tin oxide (ITO) coating on glass is an important item in the field ..... In addition, contamination of carbon from environment cannot be ruled ..... processing of ceramics, glasses and composites (eds) L L. Hench and ...

  6. The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors

    Directory of Open Access Journals (Sweden)

    Shih-Hao Chan

    2015-01-01

    Full Text Available This study aims to discuss the sheet resistance of ultrathin indium tin oxide (ITO transparent conductive films during the postannealing treatment. The thickness of the ultrathin ITO films is 20 nm. They are prepared on B270 glass substrates at room temperature by a direct-current pulsed magnetron sputtering system. Ultrathin ITO films with high sheet resistance are commonly used for touch panel applications. As the annealing temperature is increased, the structure of the ultrathin ITO film changes from amorphous to polycrystalline. The crystalline of ultrathin ITO films becomes stronger with an increase of annealing temperature, which further leads to the effect of enhanced Hall mobility. A postannealing treatment in an atmosphere can enhance the optical transmittance owing to the filling of oxygen vacancies, but the sheet resistance rises sharply. However, a higher annealing temperature, above 250°C, results in a decrease in the sheet resistance of ultrathin ITO films, because more Sn ions become an effective dopant. An optimum sheet resistance of 336 Ω/sqr was obtained for ultrathin ITO films at 400°C with an average optical transmittance of 86.8% for touch sensor applications.

  7. Stress-corrosion cracking of indium tin oxide coated polyethylene terephthalate for flexible optoelectronic devices

    International Nuclear Information System (INIS)

    Sierros, Konstantinos A.; Morris, Nicholas J.; Ramji, Karpagavalli; Cairns, Darran R.

    2009-01-01

    Stress corrosion cracking of transparent conductive layers of indium tin oxide (ITO), sputtered on polyethylene terephthalate (PET) substrates, is an issue of paramount importance in flexible optoelectronic devices. These components, when used in flexible device stacks, can be in contact with acid containing pressure-sensitive adhesives or with conductive polymers doped in acids. Acids can corrode the brittle ITO layer, stress can cause cracking and delamination, and stress-corrosion cracking can cause more rapid failure than corrosion alone. The combined effect of an externally-applied mechanical stress to bend the device and the corrosive environment provided by the acid is investigated in this work. We show that acrylic acid which is contained in many pressure-sensitive adhesives can cause corrosion of ITO coatings on PET. We also investigate and report on the combined effect of external mechanical stress and corrosion on ITO-coated PET composite films. Also, it is shown that the combination of stress and corrosion by acrylic acid can cause ITO cracking to occur at stresses less than a quarter of those needed for failure with no corrosion. In addition, the time to failure, under ∼ 1% tensile strain can reduce the total time to failure by as much as a third

  8. Structural and optical properties of zirconia thin films deposited by reactive high-power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaoli; Jin, Jie [Tianjin University, School of Electronic Information Engineering, Tianjin (China); Cheng, Jui-Ching, E-mail: juiching@ntut.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lee, Jyh-Wei [Ming Chi University of Technology, College of Materials Engineering, New Taipei City, Taiwan (China); Wu, Kuo-Hong [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lin, Kuo-Cheng; Tsai, Jung-Ruey [Asia University, Department of Photonics and Communication Engineering, Taichung, Taiwan (China); Liu, Kou-Chen, E-mail: jacobliu@mail.cgu.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China)

    2014-11-03

    Zirconia films are deposited by reactive high power impulse magnetron sputtering (HiPIMS) technology on glass and indium-tin-oxide (ITO)/glass substrates. Preparation, microstructure and optical characteristics of the films have been studied. During deposition, the influence of the target power and duty cycle on the peak current–voltage and power density has been observed in oxide mode. Transparent thin films under different oxygen proportions are obtained on the two substrates. Atomic force microscopy measurements showed that the surface roughness of the films was lower by reactive HiPIMS than DC sputtering for all oxygen contents. The transmission and reflectance properties of differently grown zirconia films were also investigated using an ultraviolet–visible spectrophotometer. The optical transmittance of films grown on glass substrates by HiPIMS reached maximum values above 90%, which exceeded that by DC sputtering. The band edge near 5.86 eV shifted to a lower wavelength for zirconia films prepared with oxygen flow rates lower than 4.5 sccm. For the films prepared on ITO/glass substrates, the transmittance and the band gap of zirconia films were limited by ITO films; a maximum average transmittance of 84% was obtained at 4.5 sccm O{sub 2} and the energy band gap was in the range of 3.7–3.8 eV for oxygen flow rates ranging from 3.5 to 5.0 sccm. Finally, the electrical properties of zirconia films have also been discussed. - Highlights: • Zirconia films are deposited by reactive high power impulse magnetron sputtering. • Low roughness films are obtained. • Films show a high transmittance (> 90%). • Films prepared on glass have a band gap of 5.9 eV.

  9. Influence of annealing temperature and environment on the properties of indium tin oxide thin films

    International Nuclear Information System (INIS)

    Wang, R X; Beling, C D; Fung, S; Djurisic, A B; Ling, C C; Kwong, C; Li, S

    2005-01-01

    Indium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300 deg. C but drastically drops at 400 deg. C when they are annealed in forming gas (mixed N 2 and H 2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400 deg. C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films

  10. Surface energy for electroluminescent polymers and indium-tin-oxide

    International Nuclear Information System (INIS)

    Zhong Zhiyou; Yin Sheng; Liu Chen; Zhong Youxin; Zhang Wuxing; Shi Dufang; Wang Chang'an

    2003-01-01

    The contact angles on the thin films of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) and indium-tin-oxide (ITO) were measured by the sessile-drop technique. The surface energies of the films were calculated using the Owens-Wendt (OW) and van Oss-Chaudhury-Good (vOCG) approaches. The overall total surface energies of MEH-PPV and the as-received ITO were 30.75 and 30.07 mJ/m 2 , respectively. Both approaches yielded almost the same surface energies. The surface energies were mainly contributed from the dispersion interactions or Lifshitz-van der Waals (LW) interactions for both MEH-PPV and ITO. The changes in the contact angles and surface energies of the ITO films, due to different solvent cleaning processes and oxygen plasma treatments, were analyzed. Experimental results revealed that the total surface energy of the ITO films increased after various cleaning processes. In comparison with different solvents used in this study, we found that methanol is an effective solvent for ITO cleaning, as a higher surface energy was observed. ITO films treated with oxygen plasma showed the highest surface energy. This work demonstrated that contact angle measurement is a useful method to diagnose the cleaning effect on ITO films

  11. Indium tin oxide films prepared via wet chemical route

    International Nuclear Information System (INIS)

    Legnani, C.; Lima, S.A.M.; Oliveira, H.H.S.; Quirino, W.G.; Machado, R.; Santos, R.M.B.; Davolos, M.R.; Achete, C.A.; Cremona, M.

    2007-01-01

    In this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an α-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 deg. C. A 10 at.% of doping of Sn 4+ ions into an In 2 O 3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10 -3 Ω cm, 2.9 cm 2 /V s and - 3.5 x 10 20 /cm 3 , respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained

  12. Seed-mediated electrochemical growth of gold nanostructures on indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Praig, Vera G.; Szunerits, Sabine [Laboratoire d' Electrochimie et de Physicochimie des Materiaux et des Interfaces (LEPMI), CNRS-INPG-UJF, 1130 rue de la piscine, BP 75, 38402 St. Martin d' Heres Cedex (France); Institut de Recherche Interdisciplinaire (IRI), USR CNRS 3078 and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN),UMR CNRS-8520, Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Piret, Gaelle; Boukherroub, Rabah [Institut de Recherche Interdisciplinaire (IRI), USR CNRS 3078 and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN),UMR CNRS-8520, Cite Scientifique, Avenue Poincare, BP 60069, 59652 Villeneuve d' Ascq (France); Manesse, Mael [Laboratoire d' Electrochimie et de Physicochimie des Materiaux et des Interfaces (LEPMI), CNRS-INPG-UJF, 1130 rue de la piscine, BP 75, 38402 St. Martin d' Heres Cedex (France); Castel, Xavier [Institut d' Electronique et de Telecommunications de Rennes (IETR), UMR CNRS 6164, 18 rue H. Wallon, BP 406, 22004 Saint-Brieuc Cedex 1 (France)

    2008-11-15

    Two-dimensional gold nanostructures (Au NSs) were fabricated on amine-terminated indium tin oxide (ITO) thin films using constant potential electrolysis. By controlling the deposition time and by choosing the appropriate ITO surface, Au NSs with different shapes were generated. When Au NSs were formed directly on aminosilane-modified ITO, the surface roughness of the interface was largely enhanced. Modification of such Au NSs with n-tetradecanethiol resulted in a highly hydrophobic interface with a water contact angle of 144 . Aminosilane-modified ITO films further modified with colloidal Au seeds before electrochemical Au NSs formation demonstrated interesting optical properties. Depending on the deposition time, surface colors ranging from pale pink to beatgold-like were observed. The optical properties and the chemical stability of the interfaces were characterized using UV-vis absorption spectroscopy. Well-defined localized surface plasmon resonance signals were recorded on Au-seeded interfaces with {lambda}{sub max}=675{+-} 2 nm (deposition time 180 s). The prepared interfaces exhibited long-term stability in various solvents and responded linearly to changes in the corresponding refractive indices. (author)

  13. Seed-mediated electrochemical growth of gold nanostructures on indium tin oxide thin films

    International Nuclear Information System (INIS)

    Praig, Vera G.; Piret, Gaelle; Manesse, Mael; Castel, Xavier; Boukherroub, Rabah; Szunerits, Sabine

    2008-01-01

    Two-dimensional gold nanostructures (Au NSs) were fabricated on amine-terminated indium tin oxide (ITO) thin films using constant potential electrolysis. By controlling the deposition time and by choosing the appropriate ITO surface, Au NSs with different shapes were generated. When Au NSs were formed directly on aminosilane-modified ITO, the surface roughness of the interface was largely enhanced. Modification of such Au NSs with n-tetradecanethiol resulted in a highly hydrophobic interface with a water contact angle of 144 deg. Aminosilane-modified ITO films further modified with colloidal Au seeds before electrochemical Au NSs formation demonstrated interesting optical properties. Depending on the deposition time, surface colors ranging from pale pink to beatgold-like were observed. The optical properties and the chemical stability of the interfaces were characterized using UV-vis absorption spectroscopy. Well-defined localized surface plasmon resonance signals were recorded on Au-seeded interfaces with λ max = 675 ± 2 nm (deposition time 180 s). The prepared interfaces exhibited long-term stability in various solvents and responded linearly to changes in the corresponding refractive indices

  14. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    International Nuclear Information System (INIS)

    Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

    2015-01-01

    Graphical abstract: - Highlights: • ITO nanowires were grown by the sputtering method using a new synthesis procedure. • By changing the deposition parameters the morphology and dimensions of the nanostructures were modified. • Seed layer thickness was an important factor for obtaining branched nanowires. • SERS substrates having good performance and a high application potential were produced. • The first Raman results for our substrates are already comparable to commercial substrates. - Abstract: Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor–liquid–solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets

  15. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    Energy Technology Data Exchange (ETDEWEB)

    Setti, Grazielle O. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil); Renato Archer Information Technology Center, Rodovia Dom Pedro I (SP-65), Km 143,6 – Amarais, 13069-901 Campinas, SP (Brazil); Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil); Joanni, Ednan, E-mail: ednan.joanni@cti.gov.br [Renato Archer Information Technology Center, Rodovia Dom Pedro I (SP-65), Km 143,6 – Amarais, 13069-901 Campinas, SP (Brazil); Jesus, Dosil P. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil)

    2015-08-30

    Graphical abstract: - Highlights: • ITO nanowires were grown by the sputtering method using a new synthesis procedure. • By changing the deposition parameters the morphology and dimensions of the nanostructures were modified. • Seed layer thickness was an important factor for obtaining branched nanowires. • SERS substrates having good performance and a high application potential were produced. • The first Raman results for our substrates are already comparable to commercial substrates. - Abstract: Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor–liquid–solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

  16. Low-Damage Sputter Deposition on Graphene

    Science.gov (United States)

    Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

    2013-03-01

    Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

  17. Grain-size effect on the electrical properties of nanocrystalline indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Hoon [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); Kim, Young Heon, E-mail: young.h.kim@kriss.re.kr [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ahn, Sang Jung [Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 305-340 (Korea, Republic of); University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Ha, Tae Hwan [University of Science & Technology, 217 Gajeong-Ro, Yuseong-Gu, Daejeon 305-350 (Korea, Republic of); Future Biotechnology Research Division, Korea Research Institute of Bioscience and Biotechnology (KRIBB), 125 Gwahak-ro, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Kim, Hong Seung [Department of Nano Semiconductor Engineering, Korea Maritime and Ocean University, 727 Taejong-Ro, Busan 606-791 (Korea, Republic of)

    2015-09-15

    Highlights: • Nanometer-sized small grains were observed in the ITO thin films. • The grain size increased as the post-thermal annealing temperature increased. • The mobility of ITO thin films increased with increasing grain size. • The ITO film annealed at 300 °C was an amorphous phase, while the others were polycrystalline structure. - Abstract: In this paper, we demonstrate the electrical properties, depending on grain size, of nanocrystalline indium tin oxide (ITO) thin films prepared with a solution process. The size distributions of nanometer-sized ITO film grains increased as the post-annealing temperature increased after deposition; the grain sizes were comparable with the calculated electron mean free path. The mobility of ITO thin films increased with increasing grain size; this phenomenon was explained by adopting the charge-trapping model for grain boundary scattering. These findings suggest that it is possible to improve mobility by reducing the number of trapping sites at the grain boundary.

  18. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

    Directory of Open Access Journals (Sweden)

    M. Cihan Çakır

    2016-09-01

    Full Text Available Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption–dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  19. Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors.

    Science.gov (United States)

    Çakır, M Cihan; Çalışkan, Deniz; Bütün, Bayram; Özbay, Ekmel

    2016-09-29

    Metal oxide gas sensors with integrated micro-hotplate structures are widely used in the industry and they are still being investigated and developed. Metal oxide gas sensors have the advantage of being sensitive to a wide range of organic and inorganic volatile compounds, although they lack selectivity. To introduce selectivity, the operating temperature of a single sensor is swept, and the measurements are fed to a discriminating algorithm. The efficiency of those data processing methods strongly depends on temperature uniformity across the active area of the sensor. To achieve this, hot plate structures with complex resistor geometries have been designed and additional heat-spreading structures have been introduced. In this work we designed and fabricated a metal oxide gas sensor integrated with a simple square planar indium tin oxide (ITO) heating element, by using conventional micromachining and thin-film deposition techniques. Power consumption-dependent surface temperature measurements were performed. A 420 °C working temperature was achieved at 120 mW power consumption. Temperature distribution uniformity was measured and a 17 °C difference between the hottest and the coldest points of the sensor at an operating temperature of 290 °C was achieved. Transient heat-up and cool-down cycle durations are measured as 40 ms and 20 ms, respectively.

  20. Ag-Pd-Cu alloy inserted transparent indium tin oxide electrodes for organic solar cells

    International Nuclear Information System (INIS)

    Kim, Hyo-Joong; Seo, Ki-Won; Kim, Han-Ki; Noh, Yong-Jin; Na, Seok-In

    2014-01-01

    The authors report on the characteristics of Ag-Pd-Cu (APC) alloy-inserted indium tin oxide (ITO) films sputtered on a glass substrate at room temperature for application as transparent anodes in organic solar cells (OSCs). The effect of the APC interlayer thickness on the electrical, optical, structural, and morphological properties of the ITO/APC/ITO multilayer were investigated and compared to those of ITO/Ag/ITO multilayer electrodes. At the optimized APC thickness of 8 nm, the ITO/APC/ITO multilayer exhibited a resistivity of 8.55 × 10 −5 Ω cm, an optical transmittance of 82.63%, and a figure-of-merit value of 13.54 × 10 −3 Ω −1 , comparable to those of the ITO/Ag/ITO multilayer. Unlike the ITO/Ag/ITO multilayer, agglomeration of the metal interlayer was effectively relieved with APC interlayer due to existence of Pd and Cu elements in the thin region of the APC interlayer. The OSCs fabricated on the ITO/APC/ITO multilayer showed higher power conversion efficiency than that of OSCs prepared on the ITO/Ag/ITO multilayer below 10 nm due to the flatness of the APC layer. The improved performance of the OSCs with ITO/APC/ITO multilayer electrodes indicates that the APC alloy interlayer prevents the agglomeration of the Ag-based metal interlayer and can decrease the thickness of the metal interlayer in the oxide-metal-oxide multilayer of high-performance OSCs

  1. Effect of fabrication conditions on the properties of indium tin oxide powders

    International Nuclear Information System (INIS)

    Xie Wei

    2008-01-01

    This paper reports that indium tin oxide (ITO) crystalline powders are prepared by coprecipitation method. Fabrication conditions mainly as sintering temperature and Sn doping content are correlated with the phase, microstructure, infrared emissivity in and powder resistivity of indium tin oxides by means of x-ray diffraction, Fourier transform infrared, and transmission electron microscope. The optimum sintering temperature of 1350°C and Sn doping content 6∼8wt% are determined. The application of ITO in the military camouflage field is proposed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. A novel technique for increase the figure of merit of indium-tin oxide transparent conducting coatings

    International Nuclear Information System (INIS)

    Keshmiri, S.H.; Roknabadi, M.R.

    1999-01-01

    Indium-Tin Oxide (ITO) films have been used as transparent electrodes in many optoelectronic devices. Although the free electron concentration in these films can be rather high, but due to low drift mobilities, the electrical conductivity of ITO films are much lower than that of metals. This is mainly due to high concentration of trapping centers created by structural defects in an ITO film. In this article, a simple technique is explained for post-deposition hydrogenation of ITO films. It was found that exposure of ITO films to atomic-hydrogen plasma produced a significant increases in the electrical conductivity of the films. At the optimum condition, an increase of about 330% in the electrical conductivity of an ITO film was observed. The hydrogenation process did not affect optical transparency of he samples adversely. But some slight improvements (in visible wavelengths) were observed. SEM studies indicated that the microstructure of the films was not noticeably changed by the hydrogenation process. (author)

  3. Controlling plasmonic properties of epitaxial thin films of indium tin oxide in the near-infrared region

    Science.gov (United States)

    Kamakura, R.; Fujita, K.; Murai, S.; Tanaka, K.

    2015-06-01

    Epitaxial thin films of indium tin oxide (ITO) were grown on yttria-stabilized zirconia single-crystal substrates by using a pulsed laser deposition to examine their plasmonic properties. The dielectric function of ITO was characterized by spectroscopic ellipsometry. Through the concentration of SnO2 in the target, the carrier concentration in the films was modified, which directly leads to the tuning of the dielectric function in the near-infrared region. Variable-angle reflectance spectroscopy in the Kretschmann geometry shows the dip in the reflection spectrum of p-polarized light corresponding to the excitation of surface plasmon polaritions (SPPs) in the near-infrared region. The excitation wavelength of the SPPs was shifted with changing the dielectric functions of ITO, which is reproduced by the calculation using transfer matrix method.

  4. Intrinsic and Extrinsic Ferromagnetism in Co-Doped Indium Tin Oxide Revealed Using X-Ray Magnetic Circular Dichroism

    Directory of Open Access Journals (Sweden)

    A. M. H. R. Hakimi

    2017-01-01

    Full Text Available The effects of high-temperature annealing on ferromagnetic Co-doped Indium Tin Oxide (ITO thin films have been investigated using X-ray diffraction (XRD, magnetometry, and X-Ray Magnetic Circular Dichroism (XMCD. Following annealing, the magnetometry results indicate the formation of Co clusters with a significant increase in the saturation magnetization of the thin films arising from defects introduced during cluster formation. However, sum rule analysis of the element-specific XMCD results shows that the magnetic moment at the Co sites is reduced after annealing. The effects of annealing demonstrate that the ferromagnetism observed in the as-deposited Co-doped ITO films arises from intrinsic defects and cannot be related to the segregation of metallic Co clusters.

  5. Development of low temperature RF magnetron sputtered ITO films on flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Muneshwar, T.P.; Varma, V.; Meshram, N; Soni, S.; Dusane, R.O. [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India)

    2010-09-15

    Indium tin oxide (ITO) is one of the important materials used as transparent conducting oxide (TCO) layer in thin film solar cells, digital displays and other similar applications. For applications involving flexible polymeric substrates, it is important that deposition of ITO is carried out at near room temperature. This requirement puts constraint on stoichiometry leading to undesired electrical and optical properties. Effect of oxygen partial pressure on ITO films deposited on flexible Kapton {sup registered} by the RF magnetron sputtering is reported in this paper. (author)

  6. Preparation and characterization of nanocrystalline ITO thin films on glass and clay substrates by ion-beam sputter deposition method

    International Nuclear Information System (INIS)

    Venkatachalam, S.; Nanjo, H.; Kawasaki, K.; Wakui, Y.; Hayashi, H.; Ebina, T.

    2011-01-01

    Nanocrystalline indium tin oxide (ITO) thin films were prepared on clay-1 (Clay-TPP-LP-SA), clay-2 (Clay-TPP-SA) and glass substrates using ion-beam sputter deposition method. X-ray diffraction (XRD) patterns showed that the as-deposited ITO films on both clay-1 and clay-2 substrates were a mixture of amorphous and polycrystalline. But the as-deposited ITO films on glass substrates were polycrystalline. The surface morphologies of as-deposited ITO/glass has smooth surface; in contrast, ITO/clay-1 has rough surface. The surface roughnesses of ITO thin films on glass and clay-1 substrate were calculated as 4.3 and 83 nm, respectively. From the AFM and SEM analyses, the particle sizes of nanocrystalline ITO for a film thickness of 712 nm were calculated as 19.5 and 20 nm, respectively. Optical study showed that the optical transmittance of ITO/clay-2 was higher than that of ITO/clay-1. The sheet resistances of as-deposited ITO/clay-1 and ITO/clay-2 were calculated as 76.0 and 63.0 Ω/□, respectively. The figure of merit value for as-deposited ITO/clay-2 (12.70 x 10 -3 /Ω) was also higher than that of ITO/clay-1 (9.6 x 10 -3 /Ω), respectively. The flexibilities of ITO/clay-1 and ITO/clay-2 were evaluated as 13 and 12 mm, respectively. However, the ITO-coated clay-2 substrate showed much better optical and electrical properties as well as flexibility as compared to clay-1.

  7. Generic Top-Functionalization of Patterned Antifouling Zwitterionic Polymers on Indium Tin Oxide

    NARCIS (Netherlands)

    Li, Y.; Giesbers, M.; Zuilhof, H.

    2012-01-01

    This paper presents a novel surface engineering approach that combines photochemical grafting and surface-initiated atom transfer radical polymerization (SI-ATRP) to attach zwitterionic polymer brushes onto indium tin oxide (ITO) substrates. The photochemically grafted hydroxyl-terminated organic

  8. First heats of cerium solution in liquid aluminium, gallium, indium, tin, lead and bismuth

    International Nuclear Information System (INIS)

    Yamshchikov, L.F.; Lebedev, V.A.; Nichkov, I.F.; Raspopin, S.P.; Shein, V.G.

    1983-01-01

    Cerium solution heats in liquid alluminium, gallium, indium, tin, lead and bismuth are determined in high temperature mixing calorimeter with an isothermal shell. The statistical analysis carried out proves that values of cerium solution heat in fusible metals obtained by the methods of electric motive forces and calorimety give a satisfactory agreement

  9. RF sputtering deposited a-IGZO films for LCD alignment layer application

    International Nuclear Information System (INIS)

    Wu, G.M.; Liu, C.Y.; Sahoo, A.K.

    2015-01-01

    Highlights: • a-IGZO nanolayer has been presented for alignment of liquid crystals in LCD. • RF sputtering deposition at an oblique angle has been performed to grow the films. • High transparency over 90% was obtained in the visible wavelength range. • The OCB cells exhibited fast on-off and short response time of 5.04 ms. • V–T characteristics proved high contrast ratio for LCD display applications. - Abstract: In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage–transmittance (V–T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V–T characteristics suggested higher contrast ratio for LCD display applications.

  10. RF sputtering deposited a-IGZO films for LCD alignment layer application

    Energy Technology Data Exchange (ETDEWEB)

    Wu, G.M., E-mail: wu@mail.cgu.edu.tw; Liu, C.Y.; Sahoo, A.K.

    2015-11-01

    Highlights: • a-IGZO nanolayer has been presented for alignment of liquid crystals in LCD. • RF sputtering deposition at an oblique angle has been performed to grow the films. • High transparency over 90% was obtained in the visible wavelength range. • The OCB cells exhibited fast on-off and short response time of 5.04 ms. • V–T characteristics proved high contrast ratio for LCD display applications. - Abstract: In this paper, amorphous indium gallium zinc oxide (a-IGZO) inorganic films were deposited at a fixed oblique angle using radio-frequency sputtering on indium tin oxide (ITO) glass as alternative alignment layer for liquid crystal displays. A series of experiments have been carried out to reveal the physical characteristics of the a-IGZO films, such as optical transmittance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The special treatment a-IGZO films were used to fabricate liquid crystal (LC) cells and investigate the performances of these cells. Pretilt angles were measured with anti-parallel LC cells and voltage–transmittance (V–T) curve, contrast ratio, and response time were evaluated with optically compensated bend (OCB) LC cells. The electro-optical characteristics of the aligned homogenous LCs, and OCB mode cells based on the a-IGZO alignment layer were compared to those based on rubbing processed polyimide (PI). The results showed that the average transmittance in the visible wavelength range was higher than 90% for the a-IGZO alignment layer. The LC pretilt angle has been determined at about 6°. The evaluted cell critical voltage at maximum transmittance was 1.8 V, lower than the control cell using PI alignment layer. The OCB cell rise time and fall time were 1.55 ms and 3.49 ms, respectivly. A very quick response time of 5.04 ms has thus been achived. In addition, the study of V–T characteristics suggested higher contrast ratio for LCD display applications.

  11. Modifying the Casimir force between indium tin oxide film and Au sphere

    Science.gov (United States)

    Banishev, A. A.; Chang, C.-C.; Castillo-Garza, R.; Klimchitskaya, G. L.; Mostepanenko, V. M.; Mohideen, U.

    2012-01-01

    We present complete results of the experiment on measuring the Casimir force between an Au-coated sphere and an untreated or, alternatively, UV-treated indium tin oxide (ITO) film deposited on a quartz substrate. Measurements were performed using an atomic force microscope in a high vacuum chamber. The measurement system was calibrated electrostatically. Special analysis of the systematic deviations is performed, and respective corrections in the calibration parameters are introduced. The corrected parameters are free from anomalies discussed in the literature. The experimental data for the Casimir force from two measurement sets for both untreated and UV-treated samples are presented. The random, systematic, and total experimental errors are determined at a 95% confidence level. It is demonstrated that the UV treatment of an ITO plate results in a significant decrease in the magnitude of the Casimir force (from 21% to 35% depending on separation). However, ellipsometry measurements of the imaginary parts of dielectric permittivities of the untreated and UV-treated samples did not reveal any significant differences. The experimental data are compared with computations in the framework of the Lifshitz theory. It is found that the data for the untreated sample are in a very good agreement with theoretical results taking into account the free charge carriers in an ITO film. For the UV-treated sample the data exclude the theoretical results obtained with account of free charge carriers. These data are in very good agreement with computations disregarding the contribution of free carriers in the dielectric permittivity. According to the hypothetical explanation provided, this is caused by the phase transition of the ITO film from metallic to dielectric state caused by the UV treatment. Possible applications of the discovered phenomenon in nanotechnology are discussed.

  12. High-power sputtering employed for film deposition

    International Nuclear Information System (INIS)

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  13. A novel electrode surface fabricated by directly attaching gold nanoparticles onto NH2+ ions implanted-indium tin oxide substrate

    International Nuclear Information System (INIS)

    Liu Chenyao; Jiao Jiao; Chen Qunxia; Xia Ji; Li Shuoqi; Hu Jingbo; Li Qilong

    2010-01-01

    A new type of gold nanoparticle attached to a NH 2 + ion implanted-indium tin oxide surface was fabricated without using peculiar binder molecules, such as 3-(aminopropyl)-trimethoxysilane. A NH 2 /indium tin oxide film was obtained by implantation at an energy of 80 keV with a fluence of 5 x 10 15 ions/cm 2 . The gold nanoparticle-modified film was characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and electrochemical techniques and compared with a modified bare indium tin oxide surface and 3-(aminopropyl)-trimethoxysilane linked surface, which exhibited a relatively low electron transfer resistance and high electrocatalytic activity. The results demonstrate that NH 2 + ion implanted-indium tin oxide films can provide an important route to immobilize nanoparticles, which is attractive in developing new biomaterials.

  14. Prediction of crack density and electrical resistance changes in indium tin oxide/polymer thin films under tensile loading

    KAUST Repository

    Mora Cordova, Angel; Khan, Kamran; El Sayed, Tamer

    2014-01-01

    We present unified predictions for the crack onset strain, evolution of crack density, and changes in electrical resistance in indium tin oxide/polymer thin films under tensile loading. We propose a damage mechanics model to quantify and predict

  15. ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

    Science.gov (United States)

    Coutts, T. J.

    1987-01-01

    This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

  16. In situ growth of Co nanofibers in In2O3-SnO2 matrix during sputtering deposition

    International Nuclear Information System (INIS)

    Echigoya, Jun-ichi; Sano, Junichi

    2006-01-01

    Co-sputtering onto (001) cubic zirconia from a target of indium tin oxide (ITO) partially covered by cobalt (Co) was carried out at substrate temperatures of 470-770 K in order to investigate the growth of Co nanofibers. During film growth, Co forms fibers in the growth direction in the single-crystalline ITO matrix. The cross section of the Co fibers, the size of which depends on the substrate temperature, was a rectangle with an edge 1-5 nm in length. The edge length of the Co fiber increased with the increase of the substrate temperature. The present method is attractive for application to produce magnetic recording media

  17. Comparison study of ITO thin films deposited by sputtering at room temperature onto polymer and glass substrates

    International Nuclear Information System (INIS)

    Guillen, C.; Herrero, J.

    2005-01-01

    Indium tin oxide (ITO) thin films have been grown simultaneously onto glass and polymer substrates at room temperature by sputtering from ceramic target. The structure, morphology and electro-optical characteristics of the ITO/glass and ITO/polymer samples have been analyzed by X-ray diffraction, atomic force microscopy, four-point electrical measurements and spectrophotometry. In the selected experimental conditions, the polycrystalline ITO coating shows higher average grain size and higher conductivity, with similar visible transmittance, onto the polymer than onto the glass substrate

  18. Niobium sputter deposition on quarter wave resonators

    CERN Document Server

    Viswanadham, C; Jayaprakash, D; Mishra, R L

    2003-01-01

    Niobium sputter deposition on quarter wave copper R.F resonators, have been taken up in our laboratory, An ultra high vacuum system was made for this purpose. Niobium exhibits superconducting properties at liquid Helium temperature. A uniform coating of about 1.5 mu m of niobium on the internal surfaces of the copper resonant cavities is desired. Power dissipation in the resonators can be greatly reduced by making the internal surfaces of the R.F cavity super conducting. (author)

  19. Effect of aluminum doping on the high-temperature stability and piezoresistive response of indium tin oxide strain sensors

    International Nuclear Information System (INIS)

    Gregory, Otto J.; You, Tao; Crisman, Everett E.

    2005-01-01

    Ceramic strain sensors based on reactively sputtered indium tin oxide (ITO) thin films doped with aluminum are being considered to improve the high-temperature stability and response. Ceramic strain sensors were developed to monitor the structural integrity of components employed in aerospace propulsion systems operating at temperatures in excess of 1500 deg C. Earlier studies using electron spectroscopy for chemical analysis (ESCA) studies indicated that interfacial reactions between ITO and aluminum oxide increase the stability of ITO at elevated temperature. The resulting ESCA depth files showed the presence of two new indium-indium peaks at 448.85 and 456.40 eV, corresponding to the indium 3d5 and 3d3 binding energies. These binding energies are significantly higher than those associated with stoichiometric indium oxide. Based on these studies, a combinatorial chemistry approach was used to screen large numbers of possible concentrations to optimize the stability and performance of Al-doped ceramic strain sensors. Scanning electron microscopy was used to analyze the combinatorial libraries in which varying amounts of aluminum were incorporated into ITO films formed by cosputtering from multiple targets. Electrical stability and piezoresistive response of these films were compared to undoped ITO films over the same temperature range

  20. Improving crystallization and electron mobility of indium tin oxide by carbon dioxide and hydrogen dual-step plasma treatment

    Science.gov (United States)

    Wang, Fengyou; Du, Rongchi; Ren, Qianshang; Wei, Changchun; Zhao, Ying; Zhang, Xiaodan

    2017-12-01

    Obtaining high conductivity indium tin oxide (ITO) films simultaneously with a "soft-deposited" (low temperature, low ions bombardment) and cost-efficient deposition process are critical aspect for versatile photo-electronic devices application. Usually, the low-cost "soft-deposited" process could be achieved via evaporation technique, but with scarifying the conductivity of the films. Here, we show a CO2 and H2 two-step plasma (TSP) post-treatment applied to ITO films prepared by reactive thermal evaporation (RTE), allows to meet the special trade-off between the deposition techniques and the electrical properties. Upon treatment, an increase in electron concentration and electron mobility is observed, which subsequently resulting a low sheet resistivity. The mobility reaches high values of 80.9 cm2/Vs for the TSP treated ∼100 nm thickness samples. From a combination of X-ray photoelectron spectroscopy and opto-electronic measurements, it demonstrated that: during the TSP process, the first-step CO2 plasma treatment could promote the crystallinity of the RTE ITO films. While the electron traps density at grain boundaries of polycrystalline RTE ITO films could be passivated by hydrogen atom during the second-step H2 plasma treatment. These results inspired that the TSP treatment process has significant application prospects owing to the outstanding electrical properties enhancement for "soft-deposited" RTE ITO films.

  1. Peculiarities of the interaction of indium-tin and indium-bismuth alloys with ammonium halides

    International Nuclear Information System (INIS)

    Red'kin, A.N.; Smirnov, V.A.; Sokolova, E.A.; Makovej, Z.I.; Telegin, G.F.

    1990-01-01

    Peculiarities of fusible metal alloys interaction with ammonium halogenides in vertical reactor are considered using indium-tin and indium-bismuth binary alloys. It is shown that at the end of the process the composition of metal and salt phases is determined by the equilibrium type and constant characteristic of the given salt-metal system. As a result the interaction of indium-tin and indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium-bismuth alloys with ammonium halogenides leads to preferential halogenation of indium which may be used in the processes of separation or purification. A model is suggested to calculate the final concentration of salt and metal phase components

  2. Reactive sputter deposition of boron nitride

    International Nuclear Information System (INIS)

    Jankowski, A.F.; Hayes, J.P.; McKernan, M.A.; Makowiecki, D.M.

    1995-10-01

    The preparation of fully dense, boron targets for use in planar magnetron sources has lead to the synthesis of Boron Nitride (BN) films by reactive rf sputtering. The deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are characterized for composition using Auger electron spectroscopy, for chemical bonding using Raman spectroscopy and for crystalline structure using transmission electron microscopy. The deposition conditions are established which lead to the growth of crystalline BN phases. In particular, the growth of an adherent cubic BN coating requires 400--500 C substrate heating and an applied -300 V dc bias

  3. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Science.gov (United States)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-08-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕinterface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  4. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    OpenAIRE

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ_ with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  5. Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering

    International Nuclear Information System (INIS)

    Wang Hua-Lin; Ding Wan-Yu; Liu Chao-Qian; Chai Wei-Ping

    2010-01-01

    Indium tin oxide (ITO) films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering. Varying O 2 flux, ITO films with different properties are obtained. Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films, respectively. Electrical properties are measured by four-point probe measurements. The results indicate that the chemical structures and compositions of ITO films strongly depend on the O 2 flux. With increasing O 2 flux, ITO films display better crystallization, which could decrease the resistivity of films. On the contrary, ITO films contain less O vacancies with increasing O 2 flux, which could worsen the conductive properties of films. Without any heat treatment onto the samples, the resistivity of the ITO film could reach 6.0 × 10 −4 Ω ·cm, with the optimal deposition parameter of 0.2 sccm O 2 flux. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Sol–gel synthesis of nanostructured indium tin oxide with controlled morphology and porosity

    Energy Technology Data Exchange (ETDEWEB)

    Kőrösi, László, E-mail: ltkorosi@gmail.com [Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertváros u. 2, H-7632 Pécs (Hungary); Scarpellini, Alice [Department of Nanochemistry, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova (Italy); Petrik, Péter [Institute for Technical Physics and Materials Science, Konkoly-Thege út 29-33, H-1121 Budapest (Hungary); Papp, Szilvia [Department of Biotechnology, Nanophage Therapy Center, Enviroinvest Corporation, Kertváros u. 2, H-7632 Pécs (Hungary); Dékány, Imre [MTA-SZTE Supramolecular and Nanostructured Materials Research Group, University of Szeged, Dóm tér 8, H-6720 Szeged (Hungary)

    2014-11-30

    Graphical abstract: - Highlights: • Nanocrystalline ITO thin films and powders were prepared by a sol–gel method. • The nature of the compounds used for hydrolysis plays a key role in the morphology. • Hydrolysis of In{sup 3+}/Sn{sup 4+} with EA led to a rod-like morphology. • Monodisperse spherical ITO nanoparticles were obtained on the use of AC. • ITO{sub E}A was highly porous, while ITO{sub A}C contained densely packed nanocrystals. - Abstract: Nanostructured indium tin oxide (ITO) powders and thin films differing in morphology and porosity were prepared by a sol–gel method. In{sup 3+} and Sn{sup 4+} were hydrolyzed in aqueous medium through the use of ethanolamine (EA) or sodium acetate (AC). X-ray diffraction measurements demonstrated that both EA and AC furnished indium tin hydroxide, which became nanocrystalline after aging for one day. The indium tin hydroxide samples calcined at 550 °C afforded ITO with a cubic crystal structure, but the morphology differed significantly, depending on the agent used for hydrolysis. Electron microscopy revealed the formation of round monodisperse nanoparticles when AC was used, whereas the application of EA led to rod-like ITO nanoparticles. Both types of nanoparticles were suitable for the preparation of transparent and conductive ITO thin films. The influence of the morphology and porosity on the optical properties is discussed.

  7. Concentration dependence of surface properties and molar volume of multicomponent system indium-tin-lead-bismuth

    Energy Technology Data Exchange (ETDEWEB)

    Dadashev, R; Kutuev, R [Complex Science Research Institute of the Science Academy of the Chechen Republic, 21 Staropromisl. shosse, Grozny 364096 (Russian Federation); Elimkhanov, D [Science Academy of the Chechen Republic (Russian Federation)], E-mail: edzhabrail@mail.ru

    2008-02-15

    The results of an experimental research of surface properties of the four-component system indium-tin-lead-bismuth are presented. The researches under discussion were carried out in a combined device in which the surface tension ({sigma}) is measured by the method of maximum pressure in a drop, and density ({rho}) is measured by advanced aerometry. Measurement errors are 0.7 % for surface tension measurement, and 0.2 % for density measurement. The study of the concentration dependence of {sigma} in this system has revealed the influence of the third and fourth components upon the characteristics of surface tension isotherms of the binary system indium-tin. It was found out that with an increase in the content of the third and fourth components the depth of the minimum on the surface tension isotherms of the indium-tin system {sigma} decreases. On the basis of the concentration dependence of the phenomenon of concentration bufferity is revealed. It is shown that despite the complex character, isotherms of {sigma} on beam sections of a multicomponent system do not contain qualitatively new features in comparison with the isotherms of these properties in lateral binary systems.

  8. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  9. High power pulsed magnetron sputtering of transparent conducting oxides

    International Nuclear Information System (INIS)

    Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

    2008-01-01

    High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

  10. Effect of non-electroactive additives on the early stage pyrrole electropolymerization on indium tin oxide electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Castro-Beltran, A. [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Ave. Pedro de Alba s/n, Ciudad Universitaria, C.P. 66451 San Nicolás de los Garza, N.L. (Mexico); Centro de Innovación Investigación y Desarrollo en Ingeniería y Tecnología (CIIDIT), Universidad Autónoma de Nuevo León, PIIT-Monterrey C.P. 66600 Apodaca, N.L. (Mexico); Dominguez, C.; Bahena-Uribe, D. [Centro Investigación en Ingeniería y Ciencias Aplicadas (CIICAp), Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, C.P. 62209 Cuernavaca, Mor. (Mexico); Sepulveda-Guzman, S., E-mail: selene.sepulvedagz@uanl.edu.mx [Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Ave. Pedro de Alba s/n, Ciudad Universitaria, C.P. 66451 San Nicolás de los Garza, N.L. (Mexico); Centro de Innovación Investigación y Desarrollo en Ingeniería y Tecnología (CIIDIT), Universidad Autónoma de Nuevo León, PIIT-Monterrey C.P. 66600 Apodaca, N.L. (Mexico); Cruz-Silva, R. [Research Center for Exotic NanoCarbon, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553 (Japan)

    2014-09-01

    The use of non-electroactive additives during electrodeposition of conducting polymers has long been used to modify the properties of deposited films. These additives can improve the adhesion, and not only change the morphology and deposition rate but also modify the chemical composition of the electrodeposited polymer. Several compounds have been used to modify deposition of polypyrrole; however, there is no systematic study of these compounds. In this work, we comparatively studied several water soluble chemical compounds, a cationic polymer, an anionic polymer, a cationic surfactant, and an anionic surfactant during potentiostatic electrodeposition of polypyrrole. In order to study the effect of these compounds on the interface, where the electrochemical polymerization takes place, we used electrochemical impedance spectroscopy. The morphology during the initial stage of growth was studied by atomic force microscopy, whereas the resulting polypyrrole films were observed by scanning electron microscopy. - Highlights: • Early-stage polymerization polypyrrole particles on indium tin oxide (ITO). • Anionic additives promote pyrrole oxidation and polypyrrole film growth on ITO. • Cationic polyelectrolyte promotes adhesion between ITO and polypyrrole film. • Non-electroactive additives strongly influence polypyrrole nucleation on ITO.

  11. Indium tin oxide with zwitterionic interfacial design for biosensing applications in complex matrices

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, Nadia T.; Alias, Yatimah; Khor, Sook Mei, E-mail: naomikhor@um.edu.my

    2015-01-15

    Graphical abstract: - Highlights: • The incorporation of a linker and antifouling molecules is an important interfacial design for both affinity and enzymatic biosensors. • The resistance to non-specific protein adsorptions of BSA–FITC and RBITC–Cyt c were determined by confocal laser scanning microscopy. • The antifouling interface allows detection of target analytes in highly complicated biological matrices. - Abstract: Biosensing interfaces consisting of linker molecules (COOH or NH{sub 2}) and charged, antifouling moieties ((-SO{sup 3−} and N{sup +}(Me){sub 3}) for biosensing applications were prepared for the first time by the in situ deposition of mixtures of aryl diazonium cations on indium tin oxide (ITO) electrodes. A linker molecule is required for the attachment of biorecognition molecules (e.g., antibodies, enzymes, DNA chains, and aptamers) close to the transducer surface. The attached molecules improve the biosensing sensitivity and also provide a short response time for analyte detection. Thus, the incorporation of a linker and antifouling molecules is an important interfacial design for both affinity and enzymatic biosensors. The reductive adsorption behavior and electrochemical measurement were studied for (1) an individual compound and (2) a mixture of antifouling zwitterionic molecules together with linker molecules [combination 1: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 1,4-phenylenediamine (PPD); combination 2: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 4-aminobenzoic acid (PABA)] of aryl diazonium cations grafted onto an ITO electrode. The mixture ratios of SP:TMAP:PPD and SP:TMAP:PABA that provided the greatest resistance to non-specific protein adsorptions of bovine serum albumin labeled with fluorescein isothiocyanate (BSA–FITC) and cytochrome c labeled with rhodamine B isothiocyanate (RBITC–Cyt c) were determined by confocal laser scanning microscopy (CLSM). For the surface antifouling study

  12. Indium tin oxide with zwitterionic interfacial design for biosensing applications in complex matrices

    International Nuclear Information System (INIS)

    Darwish, Nadia T.; Alias, Yatimah; Khor, Sook Mei

    2015-01-01

    Graphical abstract: - Highlights: • The incorporation of a linker and antifouling molecules is an important interfacial design for both affinity and enzymatic biosensors. • The resistance to non-specific protein adsorptions of BSA–FITC and RBITC–Cyt c were determined by confocal laser scanning microscopy. • The antifouling interface allows detection of target analytes in highly complicated biological matrices. - Abstract: Biosensing interfaces consisting of linker molecules (COOH or NH 2 ) and charged, antifouling moieties ((-SO 3− and N + (Me) 3 ) for biosensing applications were prepared for the first time by the in situ deposition of mixtures of aryl diazonium cations on indium tin oxide (ITO) electrodes. A linker molecule is required for the attachment of biorecognition molecules (e.g., antibodies, enzymes, DNA chains, and aptamers) close to the transducer surface. The attached molecules improve the biosensing sensitivity and also provide a short response time for analyte detection. Thus, the incorporation of a linker and antifouling molecules is an important interfacial design for both affinity and enzymatic biosensors. The reductive adsorption behavior and electrochemical measurement were studied for (1) an individual compound and (2) a mixture of antifouling zwitterionic molecules together with linker molecules [combination 1: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 1,4-phenylenediamine (PPD); combination 2: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 4-aminobenzoic acid (PABA)] of aryl diazonium cations grafted onto an ITO electrode. The mixture ratios of SP:TMAP:PPD and SP:TMAP:PABA that provided the greatest resistance to non-specific protein adsorptions of bovine serum albumin labeled with fluorescein isothiocyanate (BSA–FITC) and cytochrome c labeled with rhodamine B isothiocyanate (RBITC–Cyt c) were determined by confocal laser scanning microscopy (CLSM). For the surface antifouling study, we used 2

  13. Indium tin oxide with zwitterionic interfacial design for biosensing applications in complex matrices

    Science.gov (United States)

    Darwish, Nadia T.; Alias, Yatimah; Khor, Sook Mei

    2015-01-01

    Biosensing interfaces consisting of linker molecules (COOH or NH2) and charged, antifouling moieties ((sbnd SO3- and N+(Me)3) for biosensing applications were prepared for the first time by the in situ deposition of mixtures of aryl diazonium cations on indium tin oxide (ITO) electrodes. A linker molecule is required for the attachment of biorecognition molecules (e.g., antibodies, enzymes, DNA chains, and aptamers) close to the transducer surface. The attached molecules improve the biosensing sensitivity and also provide a short response time for analyte detection. Thus, the incorporation of a linker and antifouling molecules is an important interfacial design for both affinity and enzymatic biosensors. The reductive adsorption behavior and electrochemical measurement were studied for (1) an individual compound and (2) a mixture of antifouling zwitterionic molecules together with linker molecules [combination 1: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 1,4-phenylenediamine (PPD); combination 2: 4-sulfophenyl (SP), 4-trimethylammoniophenyl (TMAP), and 4-aminobenzoic acid (PABA)] of aryl diazonium cations grafted onto an ITO electrode. The mixture ratios of SP:TMAP:PPD and SP:TMAP:PABA that provided the greatest resistance to non-specific protein adsorptions of bovine serum albumin labeled with fluorescein isothiocyanate (BSA-FITC) and cytochrome c labeled with rhodamine B isothiocyanate (RBITC-Cyt c) were determined by confocal laser scanning microscopy (CLSM). For the surface antifouling study, we used 2-[2-(2-methoxyethoxy) ethoxy]acetic acid (OEG) as a standard control because of its prominent antifouling properties. Surface compositions of combinations 1 and 2 were characterized using X-ray photoelectron spectroscopy (XPS). Field-emission scanning electron microscopy (FE-SEM) was used to characterize the morphology of the grafted films to confirm the even distribution between linker and antifouling molecules grafted onto the ITO surfaces

  14. Design and characterization of Ga-doped indium tin oxide films for pixel electrode in liquid crystal display

    International Nuclear Information System (INIS)

    Choi, J.H.; Kang, S.H.; Oh, H.S.; Yu, T.H.; Sohn, I.S.

    2013-01-01

    Indium tin oxide (ITO) thin films doped with various metal atoms were investigated in terms of phase transition behavior and electro-optical properties for the purpose of upgrading ITO and indium zinc oxide (IZO) films, commonly used for pixel electrodes in flat panel displays. We explored Ce, Mg, Zn, and Ga atoms as dopants to ITO by the co-sputtering technique, and Ga-doped ITO films (In:Sn:Ga = 87.4:6.7:5.9 at.%) showed the phase transition behavior at 210 °C within 20 min with high visible transmittance of 91% and low resistivity of 0.22 mΩ cm. The film also showed etching rate similar to amorphous ITO, and no etching residue on glass surfaces. These results were confirmed with the film formed from a single Ga-doped ITO target with slightly different compositions (In:Sn:Ga = 87:9:4 at.%). Compared to the ITO target, Ga-doped ITO target left 1/4 less nodules on the target surface after sputtering. These results suggest that Ga-doped ITO films could be an excellent alternative to ITO and IZO for pixel electrodes in thin film transistor liquid crystal display (TFT-LCD). - Highlights: ► We report Ga-doped In–Sn–O films for a pixel electrode in liquid crystal display. ► Ga-doped In–Sn–O films show phase transition behavior at 210 °C. ► Ga-doped In–Sn–O films show high wet etchability and low resistivity

  15. The effect of the atmosphere on the optical properties of as-synthesized colloidal indium tin oxide

    International Nuclear Information System (INIS)

    Capozzi, Charles J; Joshi, Salil; Gerhardt, Rosario A; Ivanov, Ilia N

    2009-01-01

    The optical properties of indium tin oxide (ITO) have often been explored when it is in the form of deposited thin films. In this study, a colloidal chemistry approach is taken to investigate the influence of the atmosphere on the optical properties of ITO nanoparticles. X-ray diffraction (XRD), transmission electron microscopy (TEM), absorption spectroscopy and photoluminescence (PL) were used to characterize colloidal ITO samples, synthesized under aerated and inert conditions, with the same composition. In both cases, the ITO can be completely dispersed in a non-polar solvent without any evidence of agglomeration. For the ITO made in air, the nanoparticle-solvent solution exhibits a pale green color, and XRD and TEM indicate an average particle size of ∼7 nm and small shrinkage in the lattice structure. When the ITO is synthesized under inert conditions, the solution turns blue, and XRD and TEM indicate an average particle size of ∼8 nm and even less strain in the lattice than for the ITO synthesized under aerated conditions. The change in color and lattice strain is attributed to the difference in oxygen vacancy concentration for the ITO nanoparticles synthesized under aerated and inert conditions, which exhibit different optical band gap values of 3.89 eV and 4.05 eV, respectively. Our work here shows that thin film deposition or sintering steps may not be required for studying the optical properties of as-synthesized ITO nanoparticles.

  16. Experimental and Simulated Investigations of Thin Polymer Substrates with an Indium Tin Oxide Coating under Fatigue Bending Loadings

    Directory of Open Access Journals (Sweden)

    Jiong-Shiun Hsu

    2016-08-01

    Full Text Available Stress-induced failure is a critical concern that influences the mechanical reliability of an indium tin oxide (ITO film deposited on a transparently flexible polyethylene terephthalate (PET substrate. In this study, a cycling bending mechanism was proposed and used to experimentally investigate the influences of compressive and tensile stresses on the mechanical stability of an ITO film deposited on PET substrates. The sheet resistance of the ITO film, optical transmittance of the ITO-coated PET substrates, and failure scheme within the ITO film were measured to evaluate the mechanical stability of the concerned thin films. The results indicated that compressive and tensile stresses generated distinct failure schemes within an ITO film and both led to increased sheet resistance and optical transmittance. In addition, tensile stress increased the sheet resistance of an ITO film more easily than compressive stress did. However, the influences of both compressive and tensile stress on increased optical transmittance were demonstrated to be highly similar. Increasing the thickness of a PET substrate resulted in increased sheet resistance and optical transmittance regardless of the presence of compressive or tensile stress. Moreover, J-Integral, a method based on strain energy, was used to estimate the interfacial adhesion strength of the ITO-PET film through the simulation approach enabled by a finite element analysis.

  17. Deposition and characterization of sputtered hexaboride coatings

    International Nuclear Information System (INIS)

    Waldhauser, W.

    1996-06-01

    Hexaborides of the rare-earth elements ReB 6 are potential materials for cathode applications since they combine properties such as low work function, good electrical conductivity, high melting point as well as low volatility at high temperatures. Due to their high hardness and colorations ranging from blue to purple these compounds are also considered for applications to coatings for decoration of consumer products. At present, either rods of sintered LaB 6 or single LaB 6 crystals are indirectly heated to induce emission. In this workboride coatings were deposited onto various substrates employing non-reactive magnetron sputtering from LaB 6 , CeB 6 , SmB 6 and YB 6 targets. Coatings deposited were examined using scanning electron microscopy, X-ray diffraction, electron probe microanalysis. Vickers microhardness, colorimeter and spectroscopic ellipsometry measurements. Electron emission characteristics of the coatings were studied by the thermionic emission and the contact potential method. After optimization of the sputtering parameters fine-columnar or partially amorphous films with atomic ratios of boron to metal in the order of 5 to 7.5 were obtained. The tendency to form the corresponding hexaboride phase decreases from LaB 6 , CeB 6 and SmB 6 to YB 6 . The work function was measured to be in the range of 2.6 to 3.3 eV. Vickers microhardness values lie between 1500 and 2000 HVO.01. LaB 6 coatings showed the most pronounced visual color impression corresponding to dark violet. The results obtained indicate that sputtered hexaboride films are well suited for decorative and thermionic applications. (author)

  18. Effects of a base coating used for electropolymerization of poly(3,4-ethylenedioxythiophene) on indium tin oxide electrode

    International Nuclear Information System (INIS)

    Wang, X.J.; Wong, K.Y.

    2006-01-01

    Electropolymerization of poly(3,4-ethylenedioxythiophene) (PEDOT) films on indium tin oxide (ITO), using a very thin PEDOT:poly(styrene sulfonate) (PEDOT:PSS) film as a base coating, was carried out in a non-aqueous solution containing the monomer, an electrolyte and propylene carbonate by a two-electrode system. For comparison, PEDOT film electrodeposited on bare ITO substrate under the same condition was also presented. The PEDOT films deposited on these two substrates were characterized by scanning electron microscopy, energy disperse X-ray spectroscopy and Raman spectroscopy. The results indicate that the PEDOT film electrodeposited on bare ITO was not uniform, while the PEDOT film electrodeposited on PEDOT:PSS/ITO has better uniformity. The compositions of the different regions of PEDOT film electrodeposited on bare ITO and PEDOT:PSS/ITO were studied and discussed. Electrochromic devices (ECDs) based on PEDOT films electrodeposited on bare ITO and PEDOT:PSS/ITO were fabricated and characterized by UV-Vis-NIR spectrophotometric study. The results show that the display contrast of the ECD based on PEDOT film electrodeposited on PEDOT:PSS/ITO was improved over that on a bare ITO substrate

  19. Effect of Cr doping on the structural, morphological, optical and electrical properties of indium tin oxide films

    Science.gov (United States)

    Mirzaee, Majid; Dolati, Abolghasem

    2015-03-01

    We report on the preparation and characterization of high-purity chromium (0.5-2.5 at.%)-doped indium tin oxide (ITO, In:Sn = 90:10) films deposited by sol-gel-mediated dip coating. The effects of different Cr-doping contents on structural, morphological, optical and electrical properties of the films were characterized by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), UV-Vis spectroscopy and four-point probe methods. XRD showed high phase purity cubic In2O3 and indicated a contraction of the lattice with Cr doping. FESEM micrographs show that grain size decreased with increasing the Cr-doping content. A method to determine chromium species in the sample was developed through the decomposition of the Cr 2 p XPS spectrum in Cr6+ and Cr3+ standard spectra. Optical and electrical studies revealed that optimum opto-electronic properties, including minimum sheet resistance of 4,300 Ω/Sq and an average optical transmittance of 85 % in the visible region with a band gap of 3.421 eV, were achieved for the films doped with Cr-doping content of 2 at.%.

  20. Disposable Non-Enzymatic Glucose Sensors Using Screen-Printed Nickel/Carbon Composites on Indium Tin Oxide Electrodes

    Directory of Open Access Journals (Sweden)

    Won-Yong Jeon

    2015-12-01

    Full Text Available Disposable screen-printed nickel/carbon composites on indium tin oxide (ITO electrodes (DSPNCE were developed for the detection of glucose without enzymes. The DSPNCE were prepared by screen-printing the ITO substrate with a 50 wt% nickel/carbon composite, followed by curing at 400 °C for 30 min. The redox couple of Ni(OH2/NiOOH was deposited on the surface of the electrodes via cyclic voltammetry (CV, scanning from 0–1.5 V for 30 cycles in 0.1 M NaOH solution. The DSPNCE were characterized by field-emission scanning electron microscopy (FE-SEM, X-ray photoelectron spectroscopy (XPS, and electrochemical methods. The resulting electrical currents, measured by CV and chronoamperometry at 0.65 V vs. Ag/AgCl, showed a good linear response with glucose concentrations from 1.0–10 mM. Also, the prepared electrodes showed no interference from common physiologic interferents such as uric acid (UA or ascorbic acid (AA. Therefore, this approach allowed the development of a simple, disposable glucose biosensor.

  1. Indium tin oxide refractometer in the visible and near infrared via lossy mode and surface plasmon resonances with Kretschmann configuration

    International Nuclear Information System (INIS)

    Torres, V.; Beruete, M.; Sánchez, P.; Del Villar, I.

    2016-01-01

    An indium tin oxide (ITO) refractometer based on the generation of lossy mode resonances (LMRs) and surface plasmon resonances (SPRs) is presented. Both LMRs and SPRs are excited, in a single setup, under grazing angle incidence with Kretschmann configuration in an ITO thin-film deposited on a glass slide. The sensing capabilities of the device are demonstrated using several solutions of glycerin and water with refractive indices ranging from 1.33 to 1.47. LMRs are excited in the visible range, from 617 nm to 682 nm under TE polarization and from 533 nm to 637 nm under TM polarization, with a maximum sensitivity of 700 nm/RIU and 1200 nm/RIU, respectively. For the SPRs, a sensing range between 1375 nm and 2494 nm with a maximum sensitivity of 8300 nm/RIU is measured under TM polarization. Experimental results are supported with numerical simulations based on a modification of the plane-wave method for a one-dimensional multilayer waveguide

  2. Disposable Non-Enzymatic Glucose Sensors Using Screen-Printed Nickel/Carbon Composites on Indium Tin Oxide Electrodes.

    Science.gov (United States)

    Jeon, Won-Yong; Choi, Young-Bong; Kim, Hyug-Han

    2015-12-10

    Disposable screen-printed nickel/carbon composites on indium tin oxide (ITO) electrodes (DSPNCE) were developed for the detection of glucose without enzymes. The DSPNCE were prepared by screen-printing the ITO substrate with a 50 wt% nickel/carbon composite, followed by curing at 400 °C for 30 min. The redox couple of Ni(OH)₂/NiOOH was deposited on the surface of the electrodes via cyclic voltammetry (CV), scanning from 0-1.5 V for 30 cycles in 0.1 M NaOH solution. The DSPNCE were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS), and electrochemical methods. The resulting electrical currents, measured by CV and chronoamperometry at 0.65 V vs. Ag/AgCl, showed a good linear response with glucose concentrations from 1.0-10 mM. Also, the prepared electrodes showed no interference from common physiologic interferents such as uric acid (UA) or ascorbic acid (AA). Therefore, this approach allowed the development of a simple, disposable glucose biosensor.

  3. Indium tin oxide refractometer in the visible and near infrared via lossy mode and surface plasmon resonances with Kretschmann configuration

    Energy Technology Data Exchange (ETDEWEB)

    Torres, V. [Antenna Group–TERALAB, Public University of Navarra, 31006 Pamplona (Spain); Beruete, M. [Antenna Group–TERALAB, Public University of Navarra, 31006 Pamplona (Spain); Institute of Smart Cities, Public University of Navarra, 31006 Pamplona (Spain); Sánchez, P. [Department of Electric and Electronic Engineering, Public University of Navarra, Pamplona 31006 (Spain); Del Villar, I. [Institute of Smart Cities, Public University of Navarra, 31006 Pamplona (Spain); Department of Electric and Electronic Engineering, Public University of Navarra, Pamplona 31006 (Spain)

    2016-01-25

    An indium tin oxide (ITO) refractometer based on the generation of lossy mode resonances (LMRs) and surface plasmon resonances (SPRs) is presented. Both LMRs and SPRs are excited, in a single setup, under grazing angle incidence with Kretschmann configuration in an ITO thin-film deposited on a glass slide. The sensing capabilities of the device are demonstrated using several solutions of glycerin and water with refractive indices ranging from 1.33 to 1.47. LMRs are excited in the visible range, from 617 nm to 682 nm under TE polarization and from 533 nm to 637 nm under TM polarization, with a maximum sensitivity of 700 nm/RIU and 1200 nm/RIU, respectively. For the SPRs, a sensing range between 1375 nm and 2494 nm with a maximum sensitivity of 8300 nm/RIU is measured under TM polarization. Experimental results are supported with numerical simulations based on a modification of the plane-wave method for a one-dimensional multilayer waveguide.

  4. Improvement of optical and electrical properties of indium tin oxide layer of GaN-based light-emitting diode by surface plasmon in silver nanoparticles

    International Nuclear Information System (INIS)

    Cho, Chu-Young; Hong, Sang-Hyun; Park, Seong-Ju

    2015-01-01

    We report on the effect of silver (Ag) nanoparticles on the optical transmittance and electrical conductivity of indium tin oxide (ITO) transparent conducting layer deposited on p-GaN layer of light-emitting diodes (LEDs). The sheet resistance of ITO and the series resistance of LEDs were decreased due to the increased electrical conductivity of ITO by Ag nanoparticles, compared with those of the LEDs with a bare ITO only. The ITO transmittance was also improved by localized surface plasmon resonance between the incident light and the randomly distributed Ag nanoparticles on ITO. The optical output power of LEDs with Ag nanoparticles on ITO was increased by 16% at 20 mA of injection current. - Highlights: • We studied the effect of Ag nanoparticles deposited on ITO on the properties of LED. • The optical power of LED and transmittance of ITO were improved by Ag surface plasmon. • The electrical conductivity of ITO was increased by Ag nanoparticles

  5. Size-dependent electronic structure controls activity for ethanol electro-oxidation at Ptn/indium tin oxide (n = 1 to 14).

    Science.gov (United States)

    von Weber, Alexander; Baxter, Eric T; Proch, Sebastian; Kane, Matthew D; Rosenfelder, Michael; White, Henry S; Anderson, Scott L

    2015-07-21

    Understanding the factors that control electrochemical catalysis is essential to improving performance. We report a study of electrocatalytic ethanol oxidation - a process important for direct ethanol fuel cells - over size-selected Pt centers ranging from single atoms to Pt14. Model electrodes were prepared by soft-landing of mass-selected Ptn(+) on indium tin oxide (ITO) supports in ultrahigh vacuum, and transferred to an in situ electrochemical cell without exposure to air. Each electrode had identical Pt coverage, and differed only in the size of Pt clusters deposited. The small Ptn have activities that vary strongly, and non-monotonically with deposited size. Activity per gram Pt ranges up to ten times higher than that of 5 to 10 nm Pt particles dispersed on ITO. Activity is anti-correlated with the Pt 4d core orbital binding energy, indicating that electron rich clusters are essential for high activity.

  6. Electrical and optical properties of indium tin oxide/epoxy composite film

    International Nuclear Information System (INIS)

    Guo Xia; Guo Chun-Wei; Chen Yu; Su Zhi-Ping

    2014-01-01

    The electrical and optical properties of the indium tin oxide (ITO)/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film. (condensed matter: structural, mechanical, and thermal properties)

  7. Indium Tin Oxide-Free Polymer Solar Cells: Toward Commercial Reality

    DEFF Research Database (Denmark)

    Angmo, Dechan; Espinosa Martinez, Nieves; Krebs, Frederik C

    2014-01-01

    Polymer solar cell (PSC) is the latest of all photovoltaic technologies which currently lies at the brink of commercialization. The impetus for its rapid progress in the last decade has come from low-cost high throughput production possibility which in turn relies on the use of low-cost materials...... and vacuum-free manufacture. Indium tin oxide (ITO), the commonly used transparent conductor, imposes the majority of the cost of production of PSCs, limits flexibility, and is feared to create bottleneck in the dawning industry due to indium scarcity and the resulting large price fluctuations. As such...

  8. Preparation and characterization of indium tin oxide thin films for their application as gas sensors

    International Nuclear Information System (INIS)

    Vaishnav, V.S.; Patel, P.D.; Patel, N.G.

    2005-01-01

    The structural and electrical properties of indium tin oxide (In 2 O 3 /SnO 2 ) thin films grown using direct evaporation technique on various substrates at different temperatures were studied. The effect of annealing, of films with different weight percent concentration of SnO 2 in In 2 O 3 and of different thickness on the structural and electrical properties were studied and optimized for use as gas sensor. The stability of the films against time and temperature variations was studied. The effect of the catalytic layers on the sensor microstructure and its performance towards the gas sensing application was observed

  9. Gold island films on indium tin oxide for localized surface plasmon sensing

    International Nuclear Information System (INIS)

    Szunerits, Sabine; Praig, Vera G; Manesse, Mael; Boukherroub, Rabah

    2008-01-01

    Mechanically, chemically and optically stable gold island films were prepared on indium tin oxide (ITO) substrates by direct thermal evaporation of thin gold films (2-6 nm) without the need for pre- or post-coating. The effect of mild thermal annealing (150 deg. C, 12 h) or short high temperature annealing (500 deg. C, 1 min) on the morphology of the gold nanostructures was investigated. ITO covered with 2 nm gold nanoislands and annealed at 500 deg. C for 1 min was investigated for its ability to detect the adsorption of biotinylated bovine serum albumin using local surface plasmon resonance (LSPR), and its subsequent molecular recognition of avidin

  10. Indium-tin oxide surface treatments: Effects on the performance of liquid crystal devices

    International Nuclear Information System (INIS)

    Abderrahmen, A.; Romdhane, F.F.; Ben Ouada, H.; Gharbi, A.

    2006-01-01

    In this work, we investigate the effect of indium tin oxide (ITO) substrate cleaning on the surface properties. Wettability technique was used to measure the contact angle and the surface energy of the different treated ITO substrates. It is found that treatment with the methanol without dehydration gives the lowest water contact angle (most hydrophilic surface) and the highest surface energy compared to other solvents. This result was confirmed by impedance measurements performed on nematic liquid crystal cells with ITO electrodes. Indeed, we check the decrease of ionic entities in the interface ITO/liquid crystal. The polarity and dielectric parameters of the used solvents explain the obtained results

  11. Indium-tin oxide surface treatments: Effects on the performance of liquid crystal devices

    Energy Technology Data Exchange (ETDEWEB)

    Abderrahmen, A. [Laboratoire de physique et chimie des interfaces, Faculte des sciences, 5000, Monastir (Tunisia)]. E-mail: asma_abderrahmen@yahoo.fr; Romdhane, F.F. [Laboratoire de la matiere molle, Faculte des sciences, Tunis (Tunisia); Ben Ouada, H. [Laboratoire de physique et chimie des interfaces, Faculte des sciences, 5000, Monastir (Tunisia); Gharbi, A. [Laboratoire de la matiere molle, Faculte des sciences, Tunis (Tunisia)

    2006-03-15

    In this work, we investigate the effect of indium tin oxide (ITO) substrate cleaning on the surface properties. Wettability technique was used to measure the contact angle and the surface energy of the different treated ITO substrates. It is found that treatment with the methanol without dehydration gives the lowest water contact angle (most hydrophilic surface) and the highest surface energy compared to other solvents. This result was confirmed by impedance measurements performed on nematic liquid crystal cells with ITO electrodes. Indeed, we check the decrease of ionic entities in the interface ITO/liquid crystal. The polarity and dielectric parameters of the used solvents explain the obtained results.

  12. Effect of nitrogen incorporation on the structural, optical and dielectric properties of reactive sputter grown ITO films

    Energy Technology Data Exchange (ETDEWEB)

    Gartner, M.; Stroescu, H. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Marin, A., E-mail: alexmarin@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Osiceanu, P. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Anastasescu, M., E-mail: manastasescu@icf.ro [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Stoica, M.; Nicolescu, M.; Duta, M.; Preda, S. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania); Aperathitis, E.; Pantazis, A.; Kampylafka, V. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M. [Institute of Physical Chemistry “Ilie Murgulescu”, Romanian Academy, 202 Splaiul Independentei, 060021 Bucharest (Romania)

    2014-09-15

    Highlights: • Graded optical model for ITON films is presented. • ITON thin films retain an amorphous structure even after RTA at 500 °C in N{sub 2} ambient. • The lowest resistivity was 2 × 10{sup −3} Ω cm for films deposited in 75%N{sub 2} and RTA at 500 °C. • Films deposited in 75% N{sub 2} and RTA at 500 °C have degenerate semiconductor behavior. • Chemical composition before and after RTA has been analyzed by XPS depth profiling. - Abstract: The changes in the optical, microstructural and electrical properties, following the nitrogen incorporation into indium tin oxide thin films are investigated. The films are formed by r.f. sputtering from an indium-tin-oxide (80% In{sub 2}O{sub 3}–20% SnO{sub 2}) target in a mixture of Ar and N{sub 2} plasma (75% N{sub 2}–25% Ar and 100% N{sub 2} respectively) on fused silica glass substrate. The impact of rapid thermal annealing (up to 500 °C, in N{sub 2} ambient) on the properties of indium tin oxynitride (ITON) thin films is also reported. The UV–vis–NIR ellipsometry (SE) characterization of ITON films was performed assuming several realistic approaches based on various oscillator models, using a chemical composition gradient depth profiling, in agreement with the X-ray photoelectron spectroscopy measurements. The Hall measurements show that the ITON films prepared by r.f. sputtering in 75% N{sub 2} and annealed at 500 °C behave as degenerate semiconductors. X-ray diffraction analysis proved that ITON thin films retain an amorphous structure even after RTA at 500 °C in N{sub 2} ambient and atomic force microscopy showed the formation of continuous and smooth ITON thin films, with a morphology consisting in quasispherical nanometric particles.

  13. Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

    2012-01-01

    Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

  14. Tailor-made surface plasmon polaritons above the bulk plasma frequency: a design strategy for indium tin oxide

    International Nuclear Information System (INIS)

    Brand, S; Abram, R A; Kaliteevski, M A

    2010-01-01

    A simple phase-matching approach is employed as a design aid to engineer surface plasmon polariton states at the interface of an indium tin oxide layer on the top of a Bragg reflector. By altering the details of the reflector, and in particular the ordering of the layers and the thickness of the layer adjacent to the indium tin oxide, it is possible to readily adjust the energy of these states. Examples of structures engineered to give rise to distinctive features in the reflectivity spectra above the bulk screened plasma frequency for states of both possible polarizations are presented.

  15. Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

    CERN Document Server

    Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

    2003-01-01

    We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

  16. Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

    International Nuclear Information System (INIS)

    Morgado, Jorge; Barbagallo, Nunzio; Charas, Ana; Matos, Manuel; Alcacer, Luis; Cacialli, Franco

    2003-01-01

    We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide

  17. Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Simashkevich, Alexei, E-mail: alexeisimashkevich@hotmail.com [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Serban, Dormidont; Bruc, Leonid; Curmei, Nicolai [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Hinrichs, Volker [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2016-07-01

    The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region of the spectrum over 80%. The layers were deposited on the (100) surface of the n-type silicon wafers with the charge carriers concentration of ~ 10{sup 15} cm{sup −3}. The morphology of the ITO layers deposited on Si wafers with different surface morphologies, e.g., smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) was investigated. The as-deposited ITO thin films consist of crystalline columns with the height of 300–400 nm and the width of 50–100 nm. Photovoltaic parameters of mono- and bifacial solar cells of Cu/ITO/SiO{sub 2}/n–n{sup +} Si/Cu prepared on Si (100) wafers with different surface structures were studied and compared. A maximum efficiency of 15.8% was achieved on monofacial solar cell devices with the textured Si surface. Bifacial photovoltaic devices from 100 μm thick Si wafers with the smooth surface have demonstrated efficiencies of 13.0% at frontal illumination and 10% at rear illumination. - Highlights: • ITO thin films prepared by vapor phase pyrolysis on Si (100) wafers with a smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) surface. • Monofacial ITO/SiO2/n-n+Si solar cells with an efficiency of 15.8% prepared and bifacial PV devices with front- and rear-side efficiencies up to 13% demonstrated. • Comparative studies of photovoltaic properties of solar cells with different morphologies of the Si wafer surface presented.

  18. Surface modification of indium tin oxide for direct writing of silver nanoparticulate ink micropatterns

    International Nuclear Information System (INIS)

    Vunnam, Swathi; Ankireddy, Krishnamraju; Kellar, Jon; Cross, William

    2013-01-01

    Surface treatment techniques were deployed to alter the surface of indium tin oxide (ITO) samples to attain a favorable interface between printed nano-inks and ITO surface. Surface free energy components of treated ITO substrates were calculated for each treatment using the van Oss–Chaudhury–Good method. The surface treatments of ITO changed the Lifshitz–van der Waals and Lewis acid–base components, and contact angle hysteresis significantly. Among all the surface treatments, air plasma treated samples showed high polar in nature, whereas dodecyltrichlorosilane self-assembled monolayer treated sample showed the lowest. In addition to the polarity and homogeneity, the surface roughness of the ITO was studied with respect to the surface treatment. Silver nanoparticulate ink was printed on treated ITO surfaces using aerosol jet printing system. Printed silver nano-ink line width and morphology strongly depended on the surface treatment of the ITO, ink properties and printing parameters. - Highlights: ► Surface treatments on indium tin oxide (ITO) altered its surface free energy. ► Surface free energies were studied in terms of acid–base components. ► ITO surface morphology and roughness were changed with the surface treatment. ► Silver ink was printed on treated ITO samples using aerosol jet printing system. ► Line widths of printed patterns clearly depended on the surface free energy of ITO

  19. Surface modification of indium tin oxide for direct writing of silver nanoparticulate ink micropatterns

    Energy Technology Data Exchange (ETDEWEB)

    Vunnam, Swathi, E-mail: swathi.vunnam@mines.sdsmt.edu [Nanoscience and Nanoengineering Department, South Dakota School of Mines and Technology, Rapid City, SD-57701 (United States); Ankireddy, Krishnamraju; Kellar, Jon; Cross, William [Department of Materials and Metallurgical Engineering, South Dakota School of Mines and Technology, Rapid City, SD-57701 (United States)

    2013-03-01

    Surface treatment techniques were deployed to alter the surface of indium tin oxide (ITO) samples to attain a favorable interface between printed nano-inks and ITO surface. Surface free energy components of treated ITO substrates were calculated for each treatment using the van Oss–Chaudhury–Good method. The surface treatments of ITO changed the Lifshitz–van der Waals and Lewis acid–base components, and contact angle hysteresis significantly. Among all the surface treatments, air plasma treated samples showed high polar in nature, whereas dodecyltrichlorosilane self-assembled monolayer treated sample showed the lowest. In addition to the polarity and homogeneity, the surface roughness of the ITO was studied with respect to the surface treatment. Silver nanoparticulate ink was printed on treated ITO surfaces using aerosol jet printing system. Printed silver nano-ink line width and morphology strongly depended on the surface treatment of the ITO, ink properties and printing parameters. - Highlights: ► Surface treatments on indium tin oxide (ITO) altered its surface free energy. ► Surface free energies were studied in terms of acid–base components. ► ITO surface morphology and roughness were changed with the surface treatment. ► Silver ink was printed on treated ITO samples using aerosol jet printing system. ► Line widths of printed patterns clearly depended on the surface free energy of ITO.

  20. Optically active polyurethane@indium tin oxide nanocomposite: Preparation, characterization and study of infrared emissivity

    International Nuclear Information System (INIS)

    Yang, Yong; Zhou, Yuming; Ge, Jianhua; Yang, Xiaoming

    2012-01-01

    Highlights: ► Silane coupling agent of KH550 was used to connect the ITO and polyurethanes. ► Infrared emissivity values of the hybrids were compared and analyzed. ► Interfacial synergistic action and orderly secondary structure were the key factors. -- Abstract: Optically active polyurethane@indium tin oxide and racemic polyurethane@indium tin oxide nanocomposites (LPU@ITO and RPU@ITO) were prepared by grafting the organics onto the surfaces of modified ITO nanoparticles. LPU@ITO and RPU@ITO composites based on the chiral and racemic tyrosine were characterized by FT-IR, UV–vis spectroscopy, X-ray diffraction (XRD), SEM, TEM, and thermogravimetric analysis (TGA), and the infrared emissivity values (8–14 μm) were investigated in addition. The results indicated that the polyurethanes had been successfully grafted onto the surfaces of ITO without destroying the crystalline structure. Both composites possessed the lower infrared emissivity values than the bare ITO nanoparticles, which indicated that the interfacial interaction had great effect on the infrared emissivity. Furthermore, LPU@ITO based on the optically active polyurethane had the virtue of regular secondary structure and more interfacial synergistic actions between organics and inorganics, thus it exhibited lower infrared emissivity value than RPU@ITO based on the racemic polyurethane.

  1. Performance optimization of AlGaN-based LEDs by use of ultraviolet-transparent indium tin oxide: Effect of in situ contact treatment

    Science.gov (United States)

    Tu, Wenbin; Chen, Zimin; Zhuo, Yi; Li, Zeqi; Ma, Xuejin; Wang, Gang

    2018-05-01

    Ultraviolet (UV)-transparent indium tin oxide (ITO) grown by metal–organic chemical vapor deposition (MOCVD) is used as the current-spreading layer for 368 nm AlGaN-based light-emitting diodes (LEDs). By performing in situ contact treatment on the LED/ITO interface, the morphology, resistivity, and contact resistance of electrodes become controllable. Resistivity of 2.64 × 10‑4 Ω cm and transmittance at 368 nm of 95.9% are realized for an ITO thin film grown with Sn-purge in situ treatment. Therefore, the high-power operating voltage decreases from 3.94 V (without treatment) to 3.83 V (with treatment). The improved performance is attributed to the lowering of the tunneling barrier at the LED/ITO interface.

  2. Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

    OpenAIRE

    Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

    2014-01-01

    The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

  3. Transparent conductive electrodes of mixed TiO2−x–indium tin oxide for organic photovoltaics

    KAUST Repository

    Lee, Kyu-Sung; Lim, Jong-Wook; Kim, Han-Ki; Alford, T. L.; Jabbour, Ghassan E.

    2012-01-01

    A transparent conductive electrode of mixed titanium dioxide (TiO2−x)–indium tin oxide (ITO) with an overall reduction in the use of indium metal is demonstrated. When used in organic photovoltaicdevices based on bulk heterojunction photoactive

  4. Evaluation of Biofuel Cells with Hemoglobin as Cathodic Electrocatalysts for Hydrogen Peroxide Reduction on Bare Indium-Tin-Oxide Electrodes

    Directory of Open Access Journals (Sweden)

    Yusuke Ayato

    2013-12-01

    Full Text Available A biofuel cell (BFC cathode has been developed based on direct electron transfer (DET of hemoglobin (Hb molecules with an indium-tin-oxide (ITO electrode and their electrocatalysis for reduction of hydrogen peroxide (H2O2. In this study, the ITO-coated glass plates or porous glasses were prepared by using a chemical vapor deposition (CVD method and examined the electrochemical characteristics of the formed ITO in pH 7.4 of phosphate buffered saline (PBS solutions containing and not containing Hb. In half-cell measurements, the reduction current of H2O2 due to the electrocatalytic activity of Hb increased with decreasing electrode potential from around 0.1 V versus Ag|AgCl|KCl(satd. in the PBS solution. The practical open-circuit voltage (OCV on BFCs utilizing H2O2 reduction at the Hb-ITO cathode with a hydrogen (H2 oxidation anode at a platinum (Pt electrode was expected to be at least 0.74 V from the theoretical H2 oxidation potential of −0.64 V versus Ag|AgCl|KCl(satd. in pH 7.4. The assembled single cell using the ITO-coated glass plate showed the OCV of 0.72 V and the maximum power density of 3.1 µW cm−2. The maximum power per single cell was recorded at 21.5 µW by using the ITO-coated porous glass.

  5. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    International Nuclear Information System (INIS)

    Park, Taesoon; Kim, Dongsik

    2015-01-01

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10 −4 Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively

  6. Control of indium tin oxide anode work function modified using Langmuir-Blodgett monolayer for high-efficiency organic photovoltaics

    Directory of Open Access Journals (Sweden)

    Yuya Yokokura

    2017-08-01

    Full Text Available The use of Langmuir-Blodgett (LB monolayers to modify the indium tin oxide (ITO work function and thus improve the performance of zinc phthalocyanine (ZnPc/fullerene (C60-based and boron subphthalocyanine chloride (SubPc/C60-based small molecule organic photovoltaic devices (OPVs was examined. In general, LB precursor compounds contain one or more long alkyl chain substituents that can act as spacers to prevent electrical contact with adjoining electrode surfaces. As one example of such a compound, arachidic acid (CH3(CH218COOH was inserted in the forms of one-layer, three-layer or five-layer LB films between the anode ITO layer and the p-type layer in ZnPc-C60-based OPVs to investigate the effects of the long alkyl chain group when it acts as an electrically insulating spacer. The short-circuit current density (Jsc values of the OPVs with the three- and five-layer inserts (1.78 mA·cm−2 and 0.61 mA·cm−2, respectively were reduced dramatically, whereas the Jsc value for the OPV with the single-layer insertion (2.88 mA·cm−2 was comparable to that of the OPV without any insert (3.14 mA·cm-2. The ITO work function was shifted positively by LB deposition of a surfactant compound, C9F19C2H4-O-C2H4-COOH (PFECA, which contained a fluorinated head group. This positive effect was maintained even after formation of an upper p-type organic layer. The Jsc and open-circuit voltage (Voc of the SubPc-C60-based OPV with the LB-modified ITO layers were effectively enhanced. As a result, a 42% increase in device efficiency was achieved.

  7. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Park, Taesoon; Kim, Dongsik, E-mail: dskim87@postech.ac.kr

    2015-03-02

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10{sup −4} Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively.

  8. Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism

    Directory of Open Access Journals (Sweden)

    M. Zervos

    2014-05-01

    Full Text Available Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at 800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001. We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by using In:Sn source weight ratios > 1:9 while below this we observe the emergence of tetragonal rutile SnO2 and suppression of In2O3 permitting compositional and structural tuning from SnO2 to In2O3 which is accompanied by a blue shift of the photoluminescence spectrum and increase in carrier lifetime attributed to a higher crystal quality and Fermi level position.

  9. Patterning crystalline indium tin oxide by high repetition rate femtosecond laser-induced crystallization

    International Nuclear Information System (INIS)

    Cheng, Chung-Wei; Lin, Cen-Ying; Shen, Wei-Chih; Lee, Yi-Ju; Chen, Jenq-Shyong

    2010-01-01

    A method is proposed for patterning crystalline indium tin oxide (c-ITO) patterns on amorphous ITO (a-ITO) thin films by femtosecond laser irradiation at 80 MHz repetition rate followed by chemical etching. In the proposed approach, the a-ITO film is transformed into a c-ITO film over a predetermined area via the heat accumulation energy supplied by the high repetition rate laser beam, and the unirradiated a-ITO film is then removed using an acidic etchant solution. The fabricated c-ITO patterns are observed using scanning electron microscopy and cross-sectional transmission electron microscopy. The crystalline, optical, electrical properties were measured by X-ray diffraction, spectrophotometer, and four point probe station, respectively. The experimental results show that a high repetition rate reduces thermal shock and yields a corresponding improvement in the surface properties of the c-ITO patterns.

  10. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    International Nuclear Information System (INIS)

    Zhang, Yingjie; Aziz, Hany

    2014-01-01

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56 cd/A at the remarkably high brightness of 10 5  cd/m 2 is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  11. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    International Nuclear Information System (INIS)

    Ngah Demon, Siti Zulaikha; Miyauchi, Yoshihiro; Mizutani, Goro; Matsushima, Toshinori; Murata, Hideyuki

    2014-01-01

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ interface with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°

  12. Characteristics of indium-tin-oxide (ITO) nanoparticle ink-coated layers recycled from ITO scraps

    Science.gov (United States)

    Cha, Seung-Jae; Hong, Sung-Jei; Lee, Jae Yong

    2015-09-01

    This study investigates the characteristics of an indium-tin-oxide (ITO) ink layer that includes nanoparticles synthesized from ITO target scraps. The particle size of the ITO nanoparticle was less than 15 nm, and the crystal structure was cubic with a (222) preferred orientation. Also, the composition ratio of In to Sn was 92.7 to 7.3 in weight. The ITO nanoparticles were well dispersed in the ink solvent to formulate a 20-wt% ITO nanoparticle ink. Furthermore, the ITO nanoparticle ink was coated onto a glass substrate, followed by heat-treatment at 600 °C. The layer showed good sheet resistances below 400 Ω/□ and optical transmittances higher than 88% at 550 nm. Thus, we can conclude that the characteristics of the layer make it highly applicable to a transparent conductive electrode.

  13. Optimisation of the material properties of indium tin oxide layers for use in organic photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Doggart, P.; Bristow, N.; Kettle, J., E-mail: j.kettle@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean St., Bangor, Gwynedd, Wales LL57 1UT (United Kingdom)

    2014-09-14

    The influence of indium tin oxide [(In{sub 2}O{sub 3}:Sn), ITO] material properties on the output performance of organic photovoltaic (OPV) devices has been modelled and investigated. In particular, the effect of altering carrier concentration (n), thickness (t), and mobility (μ{sub e}) in ITO films and their impact on the optical performance, parasitic resistances and overall efficiency in OPVs was studied. This enables optimal values of these parameters to be calculated for solar cells made with P3HT:PC{sub 61}BM and PCPDTBT:PC{sub 71}BM active layers. The optimal values of n, t and μ{sub e} are not constant between different OPV active layers and depend on the absorption spectrum of the underlying active layer material system. Consequently, design rules for these optimal values as a function of donor bandgap in bulk-heterojunction active layers have been formulated.

  14. Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Macedo, Andreia G. [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Grova, Isabel R.; Ackcelrud, Leni [Laboratorio de Polimeros Paulo Scarpa, Departamento de Quimica, Universidade Federal do Parana, Curitiba, Parana (Brazil); Reis, Francoise T.; Sartorelli, Maria L. [Laboratorio de Sistemas Nanoestruturados, Departamento de Fisica, Universidade Federal de Santa Catarina, Florianopolis, Santa Catarina (Brazil); Roman, Lucimara S., E-mail: lsroman@fisica.ufpr.br [Laboratorio de Dispositivos Nanoestruturados, Departamento de Fisica, Universidade Federal do Parana, Curitiba, Parana (Brazil)

    2012-05-01

    In this work, porous ordered TiO{sub 2} films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

  15. Preparation of porous titanium oxide films onto indium tin oxide for application in organic photovoltaic devices

    International Nuclear Information System (INIS)

    Macedo, Andreia G.; Mattos, Luana L.; Spada, Edna R.; Serpa, Rafael B.; Campos, Cristiani S.; Grova, Isabel R.; Ackcelrud, Leni; Reis, Françoise T.; Sartorelli, Maria L.; Roman, Lucimara S.

    2012-01-01

    In this work, porous ordered TiO 2 films were prepared through sol gel route by using a monolayer of polystyrene spheres as template on indium-tin oxide/glass substrate. These films were characterized by SEM, AFM, Raman spectroscopy, UV-vis absorbance and XRD. The UV-vis absorbance spectrum show a pseudo band gap (PBG) with maxima at 460 nm arising from the light scattering and partial or total suppression of the photon density of states, this PBG can be controlled by the size of the pore. We also propose the use of this porous film as electron acceptor electrode in organic photovoltaic cells; we show that devices prepared with porous titania displayed higher efficiencies than devices using compact titania films as electrode. Such behaviour was observed in both bilayer and bulk heterojunction devices.

  16. Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode

    Directory of Open Access Journals (Sweden)

    Zhanxu Chen

    2016-01-01

    Full Text Available The indium tin oxide (ITO has been widely applied in light emitting diodes (LEDs as the transparent current spreading layer. In this work, the performance of GaN-based blue light LEDs with nanopatterned ITO electrode is investigated. Periodic nanopillar ITO arrays are fabricated by inductive coupled plasma etching with the mask of polystyrene nanosphere. The light extraction efficiency (LEE of LEDs can be improved by nanopatterned ITO ohmic contacts. The light output intensity of the fabricated LEDs with nanopatterned ITO electrode is 17% higher than that of the conventional LEDs at an injection current of 100 mA. Three-dimensional finite difference time domain simulation matches well with the experimental result. This method may serve as a practical approach to improving the LEE of the LEDs.

  17. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    International Nuclear Information System (INIS)

    Ong, Hui-Yng; Shrestha, Milan; Lau, Gih-Keong

    2015-01-01

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window

  18. Flexible organic light-emitting diodes consisting of a platinum doped indium tin oxide anode

    International Nuclear Information System (INIS)

    Hsu, C-M; Huang, C-Y; Cheng, H-E; Wu, W-T

    2009-01-01

    This paper demonstrates that a flexible organic light-emitting diode (OLED) with a platinum (Pt)-doped indium tin oxide (ITO) anode could show superior electro-optical characteristics to those of a conventional device. The threshold voltage and turn-on voltage of an OLED device consisting of an aluminium/lithium fluoride/tris(8-hydroxyquinoline) aluminium/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4, 4'-diamine/Pt-doped ITO/ITO structure were reduced by 1.2 V and 0.8 V, respectively. Current efficiency was found improved for a driving voltage of less than 6.5 V as a result of the enhanced hole-injection rate, attributed mainly to the elevated surface work function and partly reduced surface roughness of ITO by the incorporated Pt atoms in the ITO matrix.

  19. Effect of Temperature on Nucleation of Nanocrystalline Indium Tin Oxide Synthesized by Electron-Beam Evaporation

    Science.gov (United States)

    Shen, Yan; Zhao, Yujun; Shen, Jianxing; Xu, Xiangang

    2017-07-01

    Indium tin oxide (ITO) has been widely applied as a transparent conductive layer and optical window in light-emitting diodes, solar cells, and touch screens. In this paper, crystalline nano-sized ITO dendrites are obtained using an electron-beam evaporation technique. The surface morphology of the obtained ITO was studied for substrate temperatures of 25°C, 130°C, 180°C, and 300°C. Nano-sized crystalline dendrites were synthesized only at a substrate temperature of 300°C. The dendrites had a cubic structure, confirmed by the results of x-ray diffraction and transmission electron microscopy. The growth mechanism of the nano-crystalline dendrites could be explained by a vapor-liquid-solid (VLS) growth model. The catalysts of the VLS process were indium and tin droplets, confirmed by varying the substrate temperature, which further influenced the nucleation of the ITO dendrites.

  20. Respiration sensor made from indium tin oxide-coated conductive fabrics

    Science.gov (United States)

    Kim, Sun Hee; Lee, Joo Hyeon; Jee, Seung Hyun

    2015-02-01

    Conductive fabrics with new properties and applications have been the subject of extensive research over the last few years, with wearable respiration sensors attracting much attention. Different methods can be used to obtain fabrics that are electrically conducting, an essential property for various applications. For instance, fabrics can be coated with conductive polymers. Here, indium tin oxide (ITO)-coated conductive fabrics with cross-linked polyvinyl alcohol (C-PVA) were prepared using a doctor-blade. The C-PVA was employed in the synthesis to bind ITO on the fabrics with the highest possible mechanical strength. The feasibility of a respiration sensor prepared using the ITO-coated conductive fabric was investigated. The ITO-coated conductive fabric with the C-PVA was demonstrated to have a high potential for use in respiration sensors.

  1. F2-laser patterning of indium tin oxide (ITO) thin film on glass substrate

    International Nuclear Information System (INIS)

    Xu, M.Y.; Li, J.; Herman, P.R.; Lilge, L.D.

    2006-01-01

    This paper reports the controlled micromachining of 100 nm thick indium tin oxide (ITO) thin films on glass substrates with a vacuum-ultraviolet 157 nm F 2 laser. Partial to complete film removal was observed over a wide fluence window from 0.49 J/cm 2 to an optimized single pulse fluence of 4.5 J/cm 2 for complete film removal. Optical microscopy, atomic force microscopy, and energy dispersive X-ray analysis show little substrate or collateral damage by the laser pulse which conserved the stoichiometry, optical transparency and electrical conductivity of ITO coating adjacent to the trenches. At higher fluence, a parallel micron sized channel can be etched in the glass substrate. The high photon energy and top-hat beam homogenized optical system of the F 2 laser opens new means for direct structuring of electrodes and microchannels in biological microfluidic systems or in optoelectronics. (orig.)

  2. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yingjie; Aziz, Hany, E-mail: h2aziz@uwaterloo.ca [Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2014-07-07

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56 cd/A at the remarkably high brightness of 10{sup 5} cd/m{sup 2} is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  3. A sol-gel method to synthesize indium tin oxide nanoparticles

    Institute of Scientific and Technical Information of China (English)

    Xiuhua Li; Xiujuan xu; Xin Yin; Chunzhong Li; Jianrong Zhang

    2011-01-01

    Transparent conductive indium tin oxide (ITO) nanoparticles were synthesized by a novel sol-gel method.Granulated indium and tin were dissolved in HNO3 and partially complexed with citric acid.A sol-gel process was induced when tertiary butyl alcohol was added dropwise to the above solution.ITO nanoparticles with an average crystallite size of 18.5 nm and surface area of 32.6 m2/g were obtained after the gel was heat-treated at 700 C.The ITO nanoparticles showed good sinterability,the starting sintering temperature decreased sharply to 900 C,and the 1400 C sintered pellet had a density of 98.1 % of theoretical density (TD).

  4. Organic photovoltaics using thin gold film as an alternative anode to indium tin oxide

    International Nuclear Information System (INIS)

    Haldar, Amrita; Yambem, Soniya D.; Liao, Kang-Shyang; Alley, Nigel J.; Dillon, Eoghan P.; Barron, Andrew R.; Curran, Seamus A.

    2011-01-01

    Indium Tin Oxide (ITO) is the most commonly used anode as a transparent electrode and more recently as an anode for organic photovoltaics (OPVs). However, there are significant drawbacks in using ITO which include high material costs, mechanical instability including brittleness and poor electrical properties which limit its use in low-cost flexible devices. We present initial results of poly(3-hexylthiophene): phenyl-C 61 -butyric acid methyl ester OPVs showing that an efficiency of 1.9% (short-circuit current 7.01 mA/cm 2 , open-circuit voltage 0.55 V, fill factor 0.49) can be attained using an ultra thin film of gold coated glass as the device anode. The initial I-V characteristics demonstrate that using high work function metals when the thin film is kept ultra thin can be used as a replacement to ITO due to their greater stability and better morphological control.

  5. Laser micromachining of indium tin oxide films on polymer substrates by laser-induced delamination

    International Nuclear Information System (INIS)

    Willis, David A; Dreier, Adam L

    2009-01-01

    A Q-switched neodymium : yttrium-aluminium-garnet (Nd : YAG) laser was used to ablate indium tin oxide (ITO) thin films from polyethylene terephthalate substrates. Film damage and partial removal with no evidence of a melt zone was observed above 1.7 J cm -2 . Above the film removal threshold (3.3 J cm -2 ) the entire film thickness was removed without substrate damage, suggesting that ablation was a result of delamination of the film in the solid phase. Measurements of ablated fragment velocities near the ablation threshold were consistent with calculations of velocities caused by stress-induced delamination of the ITO film, except for a high velocity component at higher fluences. Nanosecond time-resolved shadowgraph photography revealed that the high velocity component was a shock wave induced by the rapid compression of ambient air when the film delaminated.

  6. Optoelectronic and magnetic properties of Mn-doped indium tin oxide: A first-principles study

    Science.gov (United States)

    Nath Tripathi, Madhvendra; Saeed Bahramy, Mohammad; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

    2012-10-01

    The manganese doped indium tin oxide (ITO) has integrated magnetics, electronics, and optical properties for next generation multifunctional devices. Our first-principles density functional theory (DFT) calculations show that the manganese atom replaces b-site indium atom, located at the second coordination shell of the interstitial oxygen in ITO. It is also found that both anti-ferromagnetic and ferromagnetic behaviors are realizable. The calculated magnetic moment of 3.95μB/Mn as well as the high transmittance of ˜80% for a 150 nm thin film of Mn doped ITO is in good agreement with the experimental data. The inclusion of on-site Coulomb repulsion corrections via DFT + U methods turns out to improve the optical behavior of the system. The optical behaviors of this system reveal its suitability for the magneto-opto-electronic applications.

  7. Application of argon atmospheric cold plasma for indium tin oxide (ITO) based diodes

    Science.gov (United States)

    Akbari Nia, S.; Jalili, Y. Seyed; Salar Elahi, A.

    2017-09-01

    Transparent Conductive Oxide (TCO) layers due to transparency, high conductivity and hole injection capability have attracted a lot of attention. One of these layers is Indium Tin Oxide (ITO). ITO due to low resistance, transparency in the visible spectrum and its proper work function is widely used in the manufacture of organic light emitting diodes and solar cells. One way for improving the ITO surface is plasma treatment. In this paper, changes in surface morphology, by applying argon atmospheric pressure cold plasma, was studied through Atomic Force Microscopic (AFM) image analysis and Fourier Transform Infrared Spectroscopy (FTIR) analysis. FTIR analysis showed functional groups were not added or removed, but chemical bond angle and bonds strength on the surface were changed and also AFM images showed that surface roughness was increased. These factors lead to the production of diodes with enhanced Ohmic contact and injection mechanism which are more appropriate in industrial applications.

  8. Microscopically crumpled indium-tin-oxide thin films as compliant electrodes with tunable transmittance

    Energy Technology Data Exchange (ETDEWEB)

    Ong, Hui-Yng [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore); School of Engineering, Nanyang Polytechnic, Singapore 569830 (Singapore); Shrestha, Milan; Lau, Gih-Keong, E-mail: mgklau@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2015-09-28

    Indium-tin-oxide (ITO) thin films are perceived to be stiff and brittle. This letter reports that crumpled ITO thin films on adhesive poly-acrylate dielectric elastomer can make compliant electrodes, sustaining compression of up to 25% × 25% equi-biaxial strain and unfolding. Its optical transmittance reduces with crumpling, but restored with unfolding. A dielectric elastomer actuator (DEA) using the 14.2% × 14.2% initially crumpled ITO thin-film electrodes is electrically activated to produce a 37% areal strain. Such electric unfolding turns the translucent DEA to be transparent, with transmittance increased from 39.14% to 52.08%. This transmittance tunability promises to make a low-cost smart privacy window.

  9. Optical second harmonic generation phase measurement at interfaces of some organic layers with indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Ngah Demon, Siti Zulaikha [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Department of Physics, Centre of Defence Foundation Studies, National Defence University of Malaysia, 53 000 Kuala Lumpur (Malaysia); Miyauchi, Yoshihiro [Department of Applied Physics, School of Applied Sciences, National Defense Academy of Japan, 239-8686 Kanagawa (Japan); Mizutani, Goro, E-mail: mizutani@jaist.ac.jp [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan); Matsushima, Toshinori; Murata, Hideyuki [School of Materials Science, Japan Advanced Institute of Science and Technology, 923-1292 Ishikawa (Japan)

    2014-08-30

    Highlights: • SHG phase from the interfaces of ITO/CuPc and ITO/pentacene was observed. • Optical dispersion of the organic thin film was taken into account. • Phase shift from bare ITO was 140° for ITO/CuPc and 160° for ITO/pentacene. - Abstract: We observed phase shift in optical second harmonic generation (SHG) from interfaces of indium tin oxide (ITO)/copper phthalocyanine (CuPc) and ITO/pentacene. Phase correction due to Fresnel factors of the sample was taken into account. The phase of SHG electric field at the ITO/pentacene interface, ϕ{sub interface} with respect to the phase of SHG of bare substrate ITO was 160°, while the interface of ITO/CuPc had a phase of 140°.

  10. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-05-15

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances.

  11. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    International Nuclear Information System (INIS)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang

    2013-01-01

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances

  12. A novel electrode surface fabricated by directly attaching gold nanoparticles onto NH{sub 2}{sup +} ions implanted-indium tin oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Liu Chenyao; Jiao Jiao; Chen Qunxia [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Xia Ji [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China); Li Shuoqi [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Hu Jingbo, E-mail: hujingbo@bnu.edu.c [College of Chemistry, Beijing Normal University, Beijing 100875 (China); Li Qilong [College of Chemistry, Beijing Normal University, Beijing 100875 (China)

    2010-12-01

    A new type of gold nanoparticle attached to a NH{sub 2}{sup +} ion implanted-indium tin oxide surface was fabricated without using peculiar binder molecules, such as 3-(aminopropyl)-trimethoxysilane. A NH{sub 2}/indium tin oxide film was obtained by implantation at an energy of 80 keV with a fluence of 5 x 10{sup 15} ions/cm{sup 2}. The gold nanoparticle-modified film was characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and electrochemical techniques and compared with a modified bare indium tin oxide surface and 3-(aminopropyl)-trimethoxysilane linked surface, which exhibited a relatively low electron transfer resistance and high electrocatalytic activity. The results demonstrate that NH{sub 2}{sup +} ion implanted-indium tin oxide films can provide an important route to immobilize nanoparticles, which is attractive in developing new biomaterials.

  13. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

  14. Effect of the Low-Temperature Annealing on Zn-Doped Indium-Tin-Oxide Films for Silicon Heterojunction Solar Cells

    Science.gov (United States)

    Lee, Seunghun; Lee, Jong-Han; Tark, Sung Ju; Choi, Suyoung; Kim, Chan Seok; Lee, Jeong Chul; Kim, Won Mok; Kim, Donghwan

    2012-10-01

    The effects of the low-temperature annealing on Zn-doped indium-tin-oxide (ITO) films such as the electrical, optical and structural properties were investigated. Zn-doped ITO films were fabricated by rf magnetron sputtering of ITO and Al-doped ZnO (AZO) targets on corning glass at room temperature. The content of Zn increased with increasing the power of AZO target. The carrier concentration of films shows the decreasing behaviour with increasing the content of Zn, due to a carrier compensation originating from the substitution of a doped Zn for an In or interstitial site. After the low-temperature annealing at 180 °C in vacuum, all films were slightly decreased a carrier concentration and increased the hall mobility because of the absorption of oxygen on the surface films. In addition, the average transmittance did not show a considerable change and had a high values over 80%. Especially, the Zn-doped ITO with atomic ratio of Zn/(In+Zn) of 6.8 at. % had the resistivity of 4×10-4 Ω cm, the highest hall mobility of 41 cm2 V-1 s-1, and the average transmittance of 82%.

  15. Characterization and application of a new pH sensor based on magnetron sputtered porous WO3 thin films deposited at oblique angles

    International Nuclear Information System (INIS)

    Salazar, Pedro; Garcia-Garcia, Francisco J.; Yubero, Francisco; Gil-Rostra, Jorge; González-Elipe, Agustín R.

    2016-01-01

    Highlights: • A solid-state pH sensor based on WO 3 amorphous thin film electrode is reported. • Cyclic voltammetry and XRD confirmed the amorphous nature of tungsten. • Potentiometric response of the WO 3 electrode revealed a quasi-Nernstian behavior. • The interference of the most common ions (Li + , Na + , K + and NH 4 + ) was negligible. • A full solid state pH sensor is developed. - Abstract: In this communication we report about an outstanding solid-state pH sensor based on amorphous nanocolumnar porous thin film electrodes. Transparent WO 3 thin films were deposited by reactive magnetron sputtering in an oblique angle configuration to enhance their porosity onto indium tin oxide (ITO) and screen printed electrodes (SPE). The potentiometric pH response of the nanoporous WO 3 -modified ITO electrode revealed a quasi-Nernstian behaviour, i.e. a linear working range from pH 1 to 12 with a slope of about −57.7 mV/pH. pH detection with this electrode was quite reproducible, displayed excellent anti-interference properties and a high stable response that remained unaltered over at least 3 months. Finally, a pH sensor was developed using nanoporous WO 3 -modified screen printed electrode (SPE) using a polypyrrole-modified Ag/AgCl electrode as internal reference electrode. This full solid state pH sensor presented a Nernstian behaviour with a slope of about −59 mV/pH and offered important analytical and operation advantages for decentralized pH measurements in different applications.

  16. Intramolecular charge separation in spirobifluorene-based donor–acceptor compounds adsorbed on Au and indium tin oxide electrodes

    International Nuclear Information System (INIS)

    Heredia, Daniel; Otero, Luis; Gervaldo, Miguel; Fungo, Fernando; Dittrich, Thomas; Lin, Chih-Yen; Chi, Liang-Chen; Fang, Fu-Chuan; Wong, Ken-Tsung

    2013-01-01

    Surface photovoltage (SPV) measurements were performed with a Kelvin-probe in spirobifluorene-based donor (diphenylamine)–acceptor (dicyano or cyanoacrylic acid moieties) compounds adsorbed from highly diluted solutions onto Au and indium tin oxide electrode surfaces. Strong intramolecular charge separation (negative SPV signals up to more than 0.1 V) due to directed molecule adsorption was observed only for spirobifluorene donor–acceptor compounds with carboxylic acid moiety. SPV signals and onset energies of electronic transitions depended on ambience conditions. - Highlights: ► Fluorene donor–acceptor derivatives were adsorbed at Au and indium tin oxide. ► Surface photovoltage measurements were performed with a Kelvin-probe. ► Strong intra-molecular charge separation was observed. ► SPV signals depended on ambience conditions

  17. Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes

    International Nuclear Information System (INIS)

    Yun, Min Ju; Kim, Hee-Dong; Kim, Kyeong Heon; Sung, Hwan Jun; Park, Sang Young; An, Ho-Myoung; Kim, Tae Geun

    2013-01-01

    In this paper, we report a transparent conductive oxide electrode scheme working for ultraviolet light-emitting diodes based on indium tin oxide (ITO)-rod and a single walled carbon nanotube (SWCNT) layer. We prepared four samples with ITO-rod, SWCNT/ITO-rod, ITO-rod/SWCNT, and SWCNT/ITO-rod/SWCNT structures for comparison. As a result, the sample with SWCNT/ITO-rod/SWCNT structures showed the highest transmittance over 90% at 280 nm and the highest Ohmic behavior (with sheet resistance of 5.33 kΩ/□) in the current–voltage characteristic curves. - Highlights: • Transparent conductive oxide (TCO) electrodes are proposed for UV light-emitting diodes. • These TCO electrodes are based on evaporated indium tin oxide (ITO)-rods. • Single walled carbon nanotube (SWCNT) layers are used as a current spreading layer. • The proposed TCO electrode structures show more than 90% transmittance at 280 nm

  18. Characterization of 12CaO x 7Al2O3 doped indium tin oxide films for transparent cathode in top-emission organic light-emitting diodes.

    Science.gov (United States)

    Jung, Chul Ho; Hwang, In Rok; Park, Bae Ho; Yoon, Dae Ho

    2013-11-01

    12CaO x 7Al2O3, insulator (C12A7) doped indium tin oxide (ITO) (ITO:C12A7) films were fabricated using a radio frequency magnetron co-sputtering system with ITO and C12A7 targets. The qualitative and quantitative properties of ITO:C12A7 films, as a function of C12A7 concentration, were examined via X-ray photoemission spectroscopy and synchrotron X-ray scattering as well as by conducting atomic force microscopy. The work function of ITO:C12A7 (1.3%) films of approximately 2.8 eV obtained by high resolution photoemission spectroscopy measurements make them a reasonable cathode for top-emission organic light-emitting diodes.

  19. Electrochemically reduced graphene–gold nano particle composite on indium tin oxide for label free immuno sensing of estradiol

    International Nuclear Information System (INIS)

    Dharuman, Venkataraman; Hahn, Jong Hoon; Jayakumar, Kumarasamy; Teng, Wei

    2013-01-01

    Highlights: •Label free immunosensing of estradiol is demonstrated using graphene–AuNP composite fabricated on ITO transducer. •Continuous potential cycling reduction method selectively reduces the acid groups of the graphene oxide at pH 6.5. •The AuNP deposition induces change in the graphene orientation on the ITO surface and enhances the charge transport. -- Abstract: Electro reduced graphene and gold nano particle (ErG/AuNP) composite is prepared on indium tin oxide (ITO) surface. Characterization by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Raman spectroscopy (RS), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) techniques reveals the formation of vertical and flat oriented ErG films on the ITO. The AuNP deposition changes the flat oriented ErGs into vertical orientation indicated by the FESEM. Coherent interactions between the ITO, ErG and AuNPs are responsible for the discrete formation of vertical oriented hetero structures of ErG–AuNP composite on the ITO. Electrochemical properties are investigated using [Fe(CN) 6 ] 3−/4− and [Ru(NH 3 )] 2+/3+ redox probes using cyclic voltammetry (CV). While the [Fe(CN) 6 ] 3−/4− shows fast reversible behavior, the [Ru(NH 3 )] 2+/3+ reveals very slow charge transport on both ErG and ErG/AuNP films indicating the multi and compact graphene layer posses positive charge at pH 6.5 used for preparing these composites. Immuno sensing of breast cancer inducing hormone 17β-estradiol (E2) is demonstrated in presence of [Fe(CN) 6 ] 3−/4− . Estrone (E1) and estriol (E3) antigens are used as the controls. The near vertical immobilization of anti-estradiol-antibody enhances the lowest detection limit of 0.1 fmol and dynamic range of 1 × 10 −3 –0.1 × 10 −12 M without any signal amplifiers. These results prove that the acid group of the GO is reduced selectively in controlled way by simple potential

  20. Nickel as an alternative semitransparent anode to indium tin oxide for polymer LED applications

    International Nuclear Information System (INIS)

    Krautz, D; Cheylan, S; Ghosh, D S; Pruneri, V

    2009-01-01

    We report on the possibility of using a thin Ni layer, instead of ITO, as a semitransparent hole-injecting electrode for bottom polymer LEDs. Thin metal layers of Ni were deposited by a sputtering technique and their electrical and optical properties with different deposition times have been investigated. Both square resistance and transmittance were seen to decrease with deposition time (thickness). The films showed a transmittance of around 30-40%, which is quite low compared to the 86% of ITO, while their square resistance was higher than that of ITO. Nevertheless, diodes based on a blue emitting polymer, polyfluorene (PFO), showed the same efficiency for either ITO or thin Ni electrodes, although the Ni transmittance is around 2.5 times lower than the ITO transmittance. Such preliminary results definitively suggest that indium-free organic devices can be achieved.

  1. Amorphous ITO thin films prepared by DC sputtering for electrochromic applications

    International Nuclear Information System (INIS)

    Teixeira, V.; Cui, H.N.; Meng, L.J.; Fortunato, E.; Martins, R.

    2002-01-01

    Indium-Tin-Oxide (ITO) thin films were deposited on glass substrates using DC magnetron reactive sputtering at different bias voltages and substrate temperatures. Some improvements were obtained on film properties, microstructure and other physical characteristics for different conditions. Amorphous and polycrystalline films can be obtained for various deposition conditions. The transmission, absorption, spectral and diffuse reflection of ITO films were measured in some ranges of UV-Vis-NIR. The refractive index (n), Energy band gap E g and the surface roughness of the film were derived from the measured spectra data. The carrier density (n c ) and the carrier mobility (μ) of the film micro conductive properties were discussed. The films exhibited suitable optical transmittance and conductivity for electrochromic applications

  2. Structural and morphological properties of ITO thin films grown by magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2015-10-01

    Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5 Ω cm.

  3. Preparation and characterization of thick metastable sputter deposits

    International Nuclear Information System (INIS)

    Allen, R.P.; Dahlgren, S.D.; Merz, M.D.

    1975-01-01

    High-rate dc supported-discharge sputtering techniques were developed and used to prepare 0.1 mm to 5.0 mm-thick deposits of a variety of metastable materials including amorphous alloys representing more than 15 different rare-earth-transition metal systems and a wide range of compositions and deposition conditions. The ability to prepare thick, homogeneous deposits has made it possible for the first time to investigate the structure, properties, and annealing behavior of these unique sputtered alloys using neutron diffraction, ultrasonic, and other experimental techniques that are difficult or impractical for thin films. More importantly, these characterization studies show that the structure and properties of the massive sputter deposits are independent of thickness and can be reproduced from deposit to deposit. Other advantages and applications of this metastable materials preparation technique include the possibility of varying structure and properties by control of the deposition parameters and the ability to deposit even reactive alloys with a very low impurity content

  4. Multilayer microfluidic systems with indium-tin-oxide microelectrodes for studying biological cells

    International Nuclear Information System (INIS)

    Wu, Hsiang-Chiu; Chen, Hsin; Lyau, Jia-Bo; Lin, Min-Hsuan; Chuang, Yung-Jen

    2017-01-01

    Contemporary semiconductor and micromachining technologies have been exploited to develop lab-on-a-chip microsystems, which enable parallel and efficient experiments in molecular and cellular biology. In these microlab systems, microfluidics play an important role for automatic transportation or immobilization of cells and bio-molecules, as well as for separation or mixing of different chemical reagents. However, seldom microlab systems allow both morphology and electrophysiology of biological cells to be studied in situ . This kind of study is important, for example, for understanding how neuronal networks grow in response to environmental stimuli. To fulfill this application need, this paper investigates the possibility of fabricating multi-layer photoresists as microfluidic systems directly above a glass substrate with indium-tin-oxide (ITO) electrodes. The microfluidic channels are designed to guide and trap biological cells on top of ITO electrodes, through which the electrical activities of cells can be recorded or elicited. As both the microfluidic system and ITO electrodes are transparent, the cellular morphology is observable easily during electrophysiological studies. Two fabrication processes are proposed and compared. One defines the structure and curing depth of each photoresist layer simply by controlling the exposure time in lithography, while the other further utilizes a sacrificial layer to defines the structure of the bottom layer. The fabricated microfluidic system is proved bio-compatible and able to trap blood cells or neurons. Therefore, the proposed microsystem will be useful for studying cultured cells efficiently in applications such as drug-screening. (paper)

  5. Inkjet-printing of indium tin oxide (ITO) films for transparent conducting electrodes

    International Nuclear Information System (INIS)

    Hwang, Myun-sung; Jeong, Bong-yong; Moon, Jooho; Chun, Sang-Ki; Kim, Jihoon

    2011-01-01

    Highlights: → Inkjet printing of ITO films. → Ag-grid was inkjet-printed in between two ITO layers in order to improve the electrical property. → Ag-grid inserted ITO films with 2 mm Ag-grid pitch showed the sheet resistance less than 3.4 Ω/sq and the transmittance higher than 82%. - Abstract: Indium-tin-oxide (ITO) films have been prepared by inkjet-printing using ITO nanoparticle inks. The electrical and optical properties of the ITO films were investigated in order to understand the effects of annealing temperatures under microwave. The decrease in the sheet resistance and resistivity of the inkjet-printed ITO films was observed as the annealing temperature increases. The film annealed at 400 deg. C showed the sheet resistance of 517 Ω/sq with the film thickness of ∼580 nm. The optical transmittance of the films remained constant regardless of their annealing temperatures. In order to further reduce the sheet resistance of the films, Ag-grid was printed in between two layers of inkjet-printed ITO. With 3 mm Ag-grid line-to-line pitch, the Ag-grid inserted ITO film has the sheet resistance of 3.4 Ω/sq and the transmittance of 84% after annealing at 200 deg. C under microwave.

  6. Dark solitons in erbium-doped fiber lasers based on indium tin oxide as saturable absorbers

    Science.gov (United States)

    Guo, Jia; Zhang, Huanian; Li, Zhen; Sheng, Yingqiang; Guo, Quanxin; Han, Xile; Liu, Yanjun; Man, Baoyuan; Ning, Tingyin; Jiang, Shouzhen

    2018-04-01

    Dark solitons, which have good stability, long transmission distance and strong anti-interference ability. By using a coprecipitation method, the high quality indium tin oxide (ITO) were prepared with an average diameter of 34.1 nm. We used a typical Z-scan scheme involving a balanced twin-detector measurement system to investigated nonlinear optical properties of the ITO nanoparticles. The saturation intensity and modulation depths are 13.21 MW/cm2 and 0.48%, respectively. In an erbium-doped fiber (EDF) lasers, we using the ITO nanoparticles as saturable absorber (SA), and the formation of dark soliton is experimentally demonstrated. The generated dark solitons are centered at the wavelength of 1561.1 nm with a repetition rate of 22.06 MHz. Besides, the pulse width and pulse-to-pulse interval of the dark solitons is ∼1.33ns and 45.11 ns, respectively. These results indicate that the ITO nanoparticles is a promising nanomaterial for ultrafast photonics.

  7. Fabrication of indium tin oxide (ITO) thin film with pre-treated sol coating

    International Nuclear Information System (INIS)

    Hong, Sung-Jei; Han, Jeong-In

    2004-01-01

    A new pre-treated sol-coating method to fabricate an indium tin oxide (ITO) thin film is introduced in this paper. The pre-treatment sol-coating method is to form a seed layer on the substrate before spin coating of ITO sol. The pre-treatment was carried out at room temperature in order not to damage the substrate during the pre-treatment. It is effective to enhance the formation of the ITO sol film on the substrate, owing to the seed layer. The seed layer consists of ultrafine grains, which are observed at the pre-treated substrate. For the optimal pre-treatment condition, we used pre-treatment times of 24, 48, 72, and 96 hours to observe the effect on the characteristics of ITO sol film. As a result, the lowest resistance could be achieved with a pre-treatment time of 72 hours. The optical transmittance of the ITO sol film with the pre-treatment time of 72 hours exceeded 80 % at a wavelength of 400 nm. So, an ITO sol film with good electrical and optical properties could be fabricated by using the pretreatment sol coating.

  8. Ultrafast modulation of the plasma frequency of vertically aligned indium tin oxide rods.

    Science.gov (United States)

    Tice, Daniel B; Li, Shi-Qiang; Tagliazucchi, Mario; Buchholz, D Bruce; Weiss, Emily A; Chang, Robert P H

    2014-03-12

    Light-matter interaction at the nanoscale is of particular interest for future photonic integrated circuits and devices with applications ranging from communication to sensing and imaging. In this Letter a combination of transient absorption (TA) and the use of third harmonic generation as a probe (THG-probe) has been adopted to investigate the response of the localized surface plasmon resonances (LSPRs) of vertically aligned indium tin oxide rods (ITORs) upon ultraviolet light (UV) excitation. TA experiments, which are sensitive to the extinction of the LSPR, show a fluence-dependent increase in the frequency and intensity of the LSPR. The THG-probe experiments show a fluence-dependent decrease of the LSPR-enhanced local electric field intensity within the rod, consistent with a shift of the LSPR to higher frequency. The kinetics from both TA and THG-probe experiments are found to be independent of the fluence of the pump. These results indicate that UV excitation modulates the plasma frequency of ITO on the ultrafast time scale by the injection of electrons into, and their subsequent decay from, the conduction band of the rods. Increases to the electron concentration in the conduction band of ∼13% were achieved in these experiments. Computer simulation and modeling have been used throughout the investigation to guide the design of the experiments and to map the electric field distribution around the rods for interpreting far-field measurement results.

  9. In-Situ Growth and Characterization of Indium Tin Oxide Nanocrystal Rods

    Directory of Open Access Journals (Sweden)

    Yan Shen

    2017-11-01

    Full Text Available Indium tin oxide (ITO nanocrystal rods were synthesized in-situ by a vapor-liquid-solid (VLS method and electron beam evaporation technique. When the electron-beam gun bombarded indium oxide (In2O3 and tin oxide (SnO2 mixed sources, indium and tin droplets appeared and acted as catalysts. The nanocrystal rods were in-situ grown on the basis of the metal catalyst point. The nanorods have a single crystal structure. Its structure was confirmed by X-ray diffraction (XRD and transmission electron microscopy (TEM. The surface morphology was analyzed by scanning electron microscopy (SEM. During the evaporation, a chemical process was happened and an In2O3 and SnO2 solid solution was formed. The percentage of doped tin oxide was calculated by Vegard’s law to be 3.18%, which was in agreement with the mixture ratio of the experimental data. The single crystal rod had good semiconductor switch property and its threshold voltage of single rod was approximately 2.5 V which can be used as a micro switch device. The transmission rate of crystalline nanorods ITO film was over 90% in visible band and it was up to 95% in the blue green band as a result of the oxygen vacancy recombination luminescence.

  10. Kinetics Study of Silver Electrocrystallization on (3-mercaptopropyl)trimethoxysilane-grafted Indium Tin Oxide Plastic Substrate

    International Nuclear Information System (INIS)

    Hau, Nga Yu; Chang, Ya-Huei; Feng, Shien-Ping

    2015-01-01

    Highlights: • The larger charge transfer coefficient supports that MPS promotes electrodeposition. • ACV shows that electron-transfer rate enhanced by 2.5 times after MPS treatment. • The fitting of CA defined the Ag nucleation mode on blank and MPS-grafted ITO-PEN. • MPS treatment changed the nucleation mode from 2-step to a single step one. - Abstract: 3-mercaptopropyl-trimethoxysilane (MPS) self-assembled monolayer (SAM) has been demonstrated as effective promoters to enable direct electroplated metallization on indium tin oxide (ITO) plastic substrate. In this paper, the detail kinetics in Ag electrocrystallization on MPS-grafted ITO-PEN is reported. Contact angle measurement provides evidence of bridging-link effect between the sulfur head groups of MPS and the Ag + ions in the electrolyte. Electrochemical techniques including cyclic voltammetry and Tafel plot were used to investigate the redox kinetics. Quantitative evaluation was conducted by alternating current voltammetry to determine the rate constant of electron transfer. The chronoamperograms and their fitting results suggest a combined model with two-dimensional/three-dimensional nucleation transition and Shariker-Hills model for electroplated Ag on blank ITO-PEN and MPS-grafted ITO-PEN respectively

  11. A study of the characteristics of indium tin oxide after chlorine electro-chemical treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Moonsoo; Kim, Jongmin; Cho, Jaehee; Kim, Hyunwoo; Lee, Nayoung; Choi, Byoungdeog, E-mail: bdchoi@skku.edu

    2016-10-15

    Graphical abstract: The presence of Chlorine in the outer surface resulted in a highly electro-negative surface states and an increase in the vacuum energy level. - Highlights: • We investigated the influence of chlorine surface treatment on ITO properties. • Chlorination induced the change of the electro-static potential in the outer surface. • Chlorine electro-chemical treatment of ITO is a simple, fast and effective technique. - Abstract: In this work, we investigate the influence of a chlorine-based electro-chemical surface treatment on the characteristics of indium tin oxide (ITO) including the work function, chemical composition, and phase transition. The treated ITOs were characterized using X-ray photoelectron spectroscopy (XPS), ultra-violet photoelectron spectroscopy (UPS), 4-point probe measurements, and grazing incidence X-ray diffraction (GI-XRD). We confirmed a change of the chemical composition in the near-surface region of the ITO and the formation of indium-chlorine (In-Cl) bonds and surface dipoles (via XPS). In particular, the change of the electro-static potential in the outer surface was caused by chlorination. Due to the vacuum-level shift after the electro-chemical treatment in a dilute hydrochloric acid, the ITO work function was increased by ∼0.43 eV (via UPS); furthermore, the electro-negativity of the chlorine anions attracted electrons to emit them from the hole transport layer (HTL) to the ITO anodes, resulting in an increase of the hole-injection efficiency.

  12. Thermal-driven attachment of gold nanoparticles prepared with ascorbic acid onto indium tin oxide surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Aziz, Md. Abdul; Oyama, Munetaka, E-mail: oyama.munetaka.4m@kyoto-u.ac.jp [Kyoto University, Department of Material Chemistry, Graduate School of Engineering (Japan)

    2013-05-15

    Thermal-driven attachment of gold nanoparticles (AuNPs), of which size was less than 50 nm, onto the surfaces of indium tin oxide (ITO) is reported as a new phenomenon. This was permitted by preparing AuNPs via the reduction of hydrogen tetrachloroaurate (HAuCl{sub 4}) with ascorbic acid (AA). While the AuNPs prepared via the AA reduction sparsely attached on the surface of ITO even at room temperature, a heat-up treatment at ca. 75 Degree-Sign C caused denser attachment of AuNPs on ITO surfaces. The attached density and the homogeneity after the thermal treatment were better than those of AuNP/ITO prepared using 3-aminopropyl-trimethoxysilane linker molecules. The denser attachment was observed similarly both by the immersion of ITO samples after the preparations of AuNPs by AA and by the in situ preparation of AuNPs with AA together with ITO samples. Thus, it is considered that the thermal-driven attachment of AuNPs would occur after the formation of AuNPs in the aqueous solutions, not via the growth of AuNPs on ITO surfaces. The preparation of AuNPs with AA would be a key for the thermal-driven attachment because the same attachments were not observed for AuNPs prepared with citrate ions or commercially available tannic acid-capped AuNPs.

  13. Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

    Science.gov (United States)

    Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

    2018-02-01

    Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

  14. Aligned carbon nanotube webs as a replacement for indium tin oxide in organic solar cells

    International Nuclear Information System (INIS)

    Sears, Kallista; Fanchini, Giovanni; Watkins, Scott E.; Huynh, Chi P.; Hawkins, Stephen C.

    2013-01-01

    Bulk heterojunction solar cells were fabricated with flexible webs of aligned multiwalled carbon nanotubes (MWNTs). These webs were drawn from a forest of MWNTs and placed directly onto the device substrate to form the hole collecting electrode. Devices were fabricated on glass substrates with one or two MWNT web layers to study the trade-off between transparency and resistivity on device performance. Devices with two web layers performed better with a fill factor of 0.47 and a device power conversion efficiency of 1.66% due to their higher conductivity. Flexible devices on Mylar substrates were also demonstrated with an efficiency of 1.2% indicating the potential of MWNT webs as a flexible alternative to the more conventional indium tin oxide. - Highlights: ► Drawable carbon nanotube webs were used as an anode in bulk heterojunction cells. ► One and two layers of carbon nanotube webs were compared. ► A thick active layer of ∼ 530 nm was needed to avoid shunting through nanotubes. ► Two layers of web gave the better efficiency of 1.6%. ► Flexible devices on Mylar were demonstrated with 1.2% efficiency

  15. Aligned carbon nanotube webs as a replacement for indium tin oxide in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sears, Kallista, E-mail: kallista.sears@csiro.au; Fanchini, Giovanni; Watkins, Scott E.; Huynh, Chi P.; Hawkins, Stephen C.

    2013-03-01

    Bulk heterojunction solar cells were fabricated with flexible webs of aligned multiwalled carbon nanotubes (MWNTs). These webs were drawn from a forest of MWNTs and placed directly onto the device substrate to form the hole collecting electrode. Devices were fabricated on glass substrates with one or two MWNT web layers to study the trade-off between transparency and resistivity on device performance. Devices with two web layers performed better with a fill factor of 0.47 and a device power conversion efficiency of 1.66% due to their higher conductivity. Flexible devices on Mylar substrates were also demonstrated with an efficiency of 1.2% indicating the potential of MWNT webs as a flexible alternative to the more conventional indium tin oxide. - Highlights: ► Drawable carbon nanotube webs were used as an anode in bulk heterojunction cells. ► One and two layers of carbon nanotube webs were compared. ► A thick active layer of ∼ 530 nm was needed to avoid shunting through nanotubes. ► Two layers of web gave the better efficiency of 1.6%. ► Flexible devices on Mylar were demonstrated with 1.2% efficiency.

  16. Influence of Thermal Annealing on the Microstructural Properties of Indium Tin Oxide Nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung Nam; Kim, Seung Bin [Pohang University of Science and Technology, Pohang (Korea, Republic of); Choi, Hyun Chul [Chonnam National University, Gwangju (Korea, Republic of)

    2012-01-15

    In this work, we studied the microstructural changes of ITO during the annealing process. ITO nanoparticles were prepared by the sol-gel method using indium tin hydroxide as the precursor. The prepared sample was investigated using TEM, powder XRD, XPS, DRIFT, and 2D correlation analysis. The O 1s XPS spectra suggested that the microstructural changes during the annealing process are closely correlated with the oxygen sites of the ITO nanoparticles. The temperature-dependent in situ DRIFT spectra suggested that In-OH in the terminal sites is firstly decomposed and, then, Sn-O-Sn is produced in the ITO nanoparticles during the thermal annealing process. Based on the 2D correlation analysis, we deduced the following sequence of events: 1483 (due to In-OH bending mode) → 2268, 2164 (due to In-OH stretching mode) → 1546 (due to overtones of Sn- O-Sn modes) → 1412 (due to overtones of Sn-O-Sn modes) cm{sup -1}.

  17. Solubility of indium-tin oxide in simulated lung and gastric fluids: Pathways for human intake.

    Science.gov (United States)

    Andersen, Jens Christian Østergård; Cropp, Alastair; Paradise, Diane Caroline

    2017-02-01

    From being a metal with very limited natural distribution, indium (In) has recently become disseminated throughout the human society. Little is known of how In compounds behave in the natural environment, but recent medical studies link exposure to In compounds to elevated risk of respiratory disorders. Animal tests suggest that exposure may lead to more widespread damage in the body, notably the liver, kidneys and spleen. In this paper, we investigate the solubility of the most widely used In compound, indium-tin oxide (ITO) in simulated lung and gastric fluids in order to better understand the potential pathways for metals to be introduced into the bloodstream. Our results show significant potential for release of In and tin (Sn) in the deep parts of the lungs (artificial lysosomal fluid) and digestive tract, while the solubility in the upper parts of the lungs (the respiratory tract or tracheobronchial tree) is very low. Our study confirms that ITO is likely to remain as solid particles in the upper parts of the lungs, but that particles are likely to slowly dissolve in the deep lungs. Considering the prolonged residence time of inhaled particles in the deep lung, this environment is likely to provide the major route for uptake of In and Sn from inhaled ITO nano- and microparticles. Although dissolution through digestion may also lead to some uptake, the much shorter residence time is likely to lead to much lower risk of uptake. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

  18. Positron beam study of indium tin oxide films on GaN

    International Nuclear Information System (INIS)

    Cheung, C K; Wang, R X; Beling, C D; Djurisic, A B; Fung, S

    2007-01-01

    Variable energy Doppler broadening spectroscopy has been used to study open-volume defects formed during the fabrication of indium tin oxide (ITO) thin films grown by electron-beam evaporation on n-GaN. The films were prepared at room temperature, 200 and 300 deg. C without oxygen and at 200 deg. C under different oxygen partial pressures. The results show that at elevated growth temperatures the ITO has fewer open volume sites and grows with a more crystalline structure. High temperature growth, however, is not sufficient in itself to remove open volume defects at the ITO/GaN interface. Growth under elevated temperature and under partial pressure of oxygen is found to further reduce the vacancy type defects associated with the ITO film, thus improving the quality of the film. Oxygen partial pressures of 6 x 10 -3 mbar and above are found to remove open volume defects associated with the ITO/GaN interface. The study suggests that, irrespective of growth temperature and oxygen partial pressure, there is only one type of defect in the ITO responsible for trapping positrons, which we tentatively attribute to the oxygen vacancy

  19. First-principles analysis of structural and opto-electronic properties of indium tin oxide

    Science.gov (United States)

    Tripathi, Madhvendra Nath; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

    2012-05-01

    Density functional theory (DFT) and DFT + U (DFT with on-site Coulomb repulsion corrections) calculations have been carried out to study the structural and opto-electronic properties of indium tin oxide (ITO) for both the oxidized and reduced environment conditions. Some of the results obtained by DFT calculations differ from the experimental observations, such as uncertain indication for the site preference of tin atom to replace indium atom at b-site or d-site, underestimation of local inward relaxation in the first oxygen polyhedra around tin atom, and also the improper estimation of electronic density of states and hence resulting in an inappropriate optical spectra of ITO. These discrepancies of theoretical outcomes with experimental observations in ITO arise mainly due to the underestimation of the cationic 4d levels within standard DFT calculations. Henceforth, the inclusion of on-site corrections within DFT + U framework significantly modifies the theoretical results in better agreement to the experimental observations. Within this framework, our calculations show that the indium b-site is preferential site over d-site for tin atom substitution in indium oxide under both the oxidized and reduced conditions. Moreover, the calculated average inward relaxation value of 0.16 Å around tin atom is in good agreement with the experimental value of 0.18 Å. Furthermore, DFT + U significantly modify the electronic structure and consequently induce modifications in the calculated optical spectra of ITO.

  20. Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

    Science.gov (United States)

    Zhong, Z Y; Jiang, Y D

    2006-10-15

    In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

  1. Preparation and optical properties of indium tin oxide/epoxy nanocomposites with polyglycidyl methacrylate grafted nanoparticles.

    Science.gov (United States)

    Tao, Peng; Viswanath, Anand; Schadler, Linda S; Benicewicz, Brian C; Siegel, Richard W

    2011-09-01

    Visibly highly transparent indium tin oxide (ITO)/epoxy nanocomposites were prepared by dispersing polyglycidyl methacrylate (PGMA) grafted ITO nanoparticles into a commercial epoxy resin. The oleic acid stabilized, highly crystalline, and near monodisperse ITO nanoparticles were synthesized via a nonaqueous synthetic route with multigram batch quantities. An azido-phosphate ligand was synthesized and used to exchange with oleic acid on the ITO surface. The azide terminal group allows for the grafting of epoxy resin compatible PGMA polymer chains via Cu(I) catalyzed alkyne-azide "click" chemistry. Transmission electron microscopy (TEM) observation shows that PGMA grafted ITO particles were homogeneously dispersed within the epoxy matrix. Optical properties of ITO/epoxy nanocomposites with different ITO concentrations were studied with an ultraviolet-visible-near-infrared (UV-vis-NIR) spectrometer. All the ITO/epoxy nanocomposites show more than 90% optical transparency in the visible light range and absorption of UV light from 300 to 400 nm. In the near-infrared region, ITO/epoxy nanocomposites demonstrate low transmittance and the infrared (IR) transmission cutoff wavelength of the composites shifts toward the lower wavelength with increased ITO concentration. The ITO/epoxy nanocomposites were applied onto both glass and plastic substrates as visibly transparent and UV/IR opaque optical coatings.

  2. Hydrogen doping of Indium Tin Oxide due to thermal treatment of hetero-junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ritzau, Kurt-Ulrich, E-mail: kurt-ulrich.ritzau@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Behrendt, Torge [Infineon Technologies, Max-Planck-Straße 5, 59581 Warstein (Germany); Palaferri, Daniele [Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Diderot, Sorbonne Paris Cité, CNRS—UMR 7162, 75013 Paris (France); Bivour, Martin; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany)

    2016-01-29

    Indium Tin Oxide (ITO) layers in silicon hetero junction solar cells change their electrical and optical properties when exposed to temperature treatments. Hydrogen which effuses from underlying amorphous silicon layers is identified to dope the ITO layer. This leads to an additional increase in conductivity. In this way an almost isolating ITO can become degenerately doped through temperature treatments. The resulting carrier density in the range of 10{sup 20} cm{sup −3} leads to a substantial increase in free carrier absorption, which in turn leads to an increased parasitic absorption in the cell device. Thus hydrogen effusion in silicon hetero-junction (SHJ) solar cells does not only affect the degradation of amorphous silicon (a-Si:H) passivation of crystalline silicon (c-Si), but also the electrical and optical properties of both front and back ITO layers. This leads to the further design rule for SHJ solar cells, meaning that ITO properties have to be optimized in the state after modification during temperature treatment. - Highlights: • ITO is additionally doped by heat treatment of silicon hetero-junction solar cells. • The discovered effect turns an almost isolating ITO into a degenerately doped TCO. • TCO properties have to be considered as measured in the final cell.

  3. The crystallization and properties of sputter deposited lithium niobite

    Energy Technology Data Exchange (ETDEWEB)

    Shank, Joshua C.; Brooks Tellekamp, M.; Alan Doolittle, W., E-mail: alan.doolittle@ece.gatech.edu

    2016-06-30

    Sputter deposition of the thin film memristor material, lithium niobite (LiNbO{sub 2}) is performed by co-deposition from a lithium oxide (Li{sub 2}O) and a niobium target. Crystalline films that are textured about the (101) orientation are produced under room temperature conditions. This material displays memristive hysteresis and exhibits XPS spectra similar to MBE and bulk grown LiNbO{sub 2}. Various deposition parameters were investigated resulting in variations in the deposition rate, film crystallinity, oxygen to niobium ratio, and mean niobium oxidation state. The results of this study allow for the routine production of large area LiNbO{sub 2} films at low substrate temperature useful in hybrid-integration of memristor, optical, and energy storage applications. - Highlights: • Room temperature sputter deposition of crystalline lithium niobite (LiNbO{sub 2}) • Contrast with previous high temperature corrosive growth methods • Analysis of sputter deposition parameters on the chemical and physical properties of the deposited material.

  4. The crystallization and properties of sputter deposited lithium niobite

    International Nuclear Information System (INIS)

    Shank, Joshua C.; Brooks Tellekamp, M.; Alan Doolittle, W.

    2016-01-01

    Sputter deposition of the thin film memristor material, lithium niobite (LiNbO_2) is performed by co-deposition from a lithium oxide (Li_2O) and a niobium target. Crystalline films that are textured about the (101) orientation are produced under room temperature conditions. This material displays memristive hysteresis and exhibits XPS spectra similar to MBE and bulk grown LiNbO_2. Various deposition parameters were investigated resulting in variations in the deposition rate, film crystallinity, oxygen to niobium ratio, and mean niobium oxidation state. The results of this study allow for the routine production of large area LiNbO_2 films at low substrate temperature useful in hybrid-integration of memristor, optical, and energy storage applications. - Highlights: • Room temperature sputter deposition of crystalline lithium niobite (LiNbO_2) • Contrast with previous high temperature corrosive growth methods • Analysis of sputter deposition parameters on the chemical and physical properties of the deposited material

  5. RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

    NARCIS (Netherlands)

    Hattum, E.D. van

    2007-01-01

    RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

  6. Sputter deposition of BSCCO films from a hollow cathode

    International Nuclear Information System (INIS)

    Lanagan, M.T.; Kampwirth, R.T.; Doyle, K.; Kowalski, S.; Miller, D.; Gray, K.E.

    1991-01-01

    High-T c superconducting thin films were deposited onto MgO single crystal substrates from a hollow cathode onto ceramic targets with the nominal composition of Bi 2 Sr 2 CaCu 2 O x . Films similar in composition to those used for the targets were deposited on MgO substrates by rf sputtering. The effects of sputtering time, rf power, and post-annealing on film microstructure and properties were studied in detail. Substrate temperature was found to have a significant influence on the film characteristics. Initial results show that deposition rates from a hollow cathode are an order of magnitude higher than those of a planar magnetron source at equivalent power levels. Large deposition rates allow for the coating of long lengths of wire

  7. Ion-assisted sputter deposition of molybdenum--silicon multilayers

    International Nuclear Information System (INIS)

    Vernon, S.P.; Stearns, D.G.; Rosen, R.S.

    1993-01-01

    X-ray multilayer (ML) structures that are fabricated by the use of magnetron-sputter deposition exhibit a degradation in structural quality as the deposition pressure is increased. The observed change in morphology is attributed to a reduced mobility of surface adsorbed atoms, which inhibits the formation of smooth, continuous layers. The application of a negative substrate bias produces ion bombardment of the growing film surface by sputtering gas ions extracted from the plasma and permits direct control of the energy density supplied to the film surface during thin-film growth. The technique supplements the energy lost to thermalization in high-pressure deposition and permits the fabrication of high-quality ML structures at elevated processing pressures. A threefold improvement in the soft-x-ray normal-incidence reflectance at 130 A results for substrate bias voltages of the order of ∼-150 V for Mo--Si ML's deposited at 10-mTorr Ar

  8. Study on Optoelectronic Characteristics of Sn-Doped ZnO Thin Films on Poly(ethylene terephthalate) and Indium Tin Oxide/Poly(ethylene terephthalate) Flexible Substrates

    Science.gov (United States)

    Cheng, Chi-Hwa; Chen, Mi; Chiou, Chin-Lung; Liu, Xing-Yang; Weng, Lin-Song; Koo, Horng-Show

    2013-05-01

    Transparent conductive oxides of Sn-doped ZnO (SZO) films with doping weight ratios of 2.0, 3.0, 4.0, and 5.0 wt % have been deposited on indium tin oxide (ITO)/poly(ethylene terephthalate) (PET) and PET flexible substrates at room temperature by pulsed laser deposition (PLD). Resultant films of SZO on ITO/PET and PET flexible substrates are amorphous in phase. It is found that undoped and SZO films on ITO/PET is anomalously better than films on PET in optical transmittance in the range of longer wavelength, possibly due to the refraction index difference between SZO, ITO films, and PET substrates, Burstein-Moss effect and optical interference of SZO/ITO bilayer films and substrate materials, and furthermore resulting in the decrement of reflection. The lowest electrical resistivity (ρ) of 4.0 wt % SZO films on flexible substrates of PET and ITO/PET are 3.8×10-2 and ρ= 1.2×10-2 Ω.cm, respectively. It is found that electrical and optical properties of the resultant films are greatly dependent on various amount of Sn element doping effect and substrate material characteristics.

  9. Effect of passive film on electrochemical surface treatment for indium tin oxide

    International Nuclear Information System (INIS)

    Wu, Yung-Fu; Chen, Chi-Hao

    2013-01-01

    Highlights: ► Oxalic, tartaric, and citric acid baths accompanying with applied voltages were used to treat the ITO surface. ► We investigated the changes in ITO surfaces by examining the potentiodynamic behavior of ITO films. ► AFM analysis showed the formation of a passive layer could assist to planarize surface. ► XPS analysis indicated this passive layer was mainly composed of SnO 2. ► A better planarization was obtained by treating in 3.0 wt.% tartaric acid at 0.5 V due to weak complexation strength. - Abstract: Changes in indium tin oxide (ITO) film surface during electrochemical treatment in oxalic acid, tartaric acid, and citric acid were investigated. Controlling the voltage applied on ITO film allows the formation of a passive layer, effectively protecting the film surface. X-ray photoelectron spectrometry showed that the passive layer composition was predominantly SnO 2 in tartaric acid, while a composite of tin oxide and tin carboxylate in citric or oxalic acid. Even though the passive films on ITO surface generated in these organic acids, the indium or tin could complex with the organic acid anions, enhancing the dissolution of ITO films. The experimental results show that the interaction between the dissolution and passivation could assist to planarize the ITO surface. We found that the optimal treatment at 0.5 V in 3 wt.% tartaric acid could provide the ITO surface with root-mean-squared roughness less than 1.0 nm, due to the weak complexing characteristics of tartaric acid.

  10. Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devices

    International Nuclear Information System (INIS)

    Baek, Kyunghyun; Jang, Kyungsoo; Lee, Youn-Jung; Ryu, Kyungyul; Choi, Woojin; Kim, Doyoung; Yi, Junsin

    2013-01-01

    We report the effect of silver (Ag)-buffer layer Indium-Tin-Oxide (ITO) film on a polyethylene terephthalate substrate on the electrical, optical and reliable properties for transparent–flexible displays. The electrical and optical characteristics of an ITO-only film and an Ag-layer-inserted ITO film are measured and compared to assess the applicability of the triple layered structure in flexible displays. The sheet resistance, the resistivity and the light transmittance of the ITO-only film were 400 Ω/sq, 1.33 × 10 −3 Ω-cm and 99.2%, while those of the ITO film inserted with a 10 nm thick Ag layer were 165 Ω/sq, 4.78 × 10 −4 Ω-cm and about 97%, respectively. To evaluate the mechanical reliability of the different ITO films, bending tests were carried out. After the dynamic bending test of 900 cycles, the sheet resistance of the ITO film inserted with the Ag layer changed from 154 Ω/sq to 475 Ω/sq, about a 3-time increase but that of the ITO-only film changed from 400 Ω/sq to 61,986 Ω/sq, about 150-time increase. When the radius is changed from 25 mm to 20 mm in the static bending test, the sheet resistance of the ITO-only film changed from 400 to 678.3 linearly whereas that of the Ag-layer inserted ITO film changed a little from 154.4 to 154.9. These results show that Ag-layer inserted ITO film had better mechanical characteristics than the ITO-only film. - Highlights: ► Transparent flexible electrode fabricated on glass substrate. ► Electrode fabricated using vertically-patterned design on glass substrate. ► Optimization of the vertical patterns ► Application of the vertically-patterned electrode in transparent–flexible electronics

  11. An oxidation-resistant indium tin oxide catalyst support for proton exchange membrane fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Chhina, H.; Campbell, S. [Ballard Power Systems Inc., 9000 Glenlyon Parkway, Burnaby, BC V5J 5J8 (Canada); Kesler, O. [Department of Mechanical Engineering, University of British Columbia, Vancouver, BC, V6T 1Z4 (Canada)

    2006-10-27

    The oxidation of carbon catalyst supports causes degradation in catalyst performance in proton exchange membrane fuel cells (PEMFCs). Indium tin oxide (ITO) is considered as a candidate for an alternative catalyst support. The electrochemical stability of ITO was studied by use of a rotating disk electrode (RDE). Oxidation cycles between +0.6 and +1.8V were applied to ITO supporting a Pt catalyst. Cyclic voltammograms (CVs) both before and after the oxidation cycles were obtained for Pt on ITO, Hispec 4000 (a commercially available catalyst), and 40wt.% Pt dispersed in-house on Vulcan XC-72R. Pt on ITO showed significantly better electrochemical stability, as determined by the relative change in electrochemically active surface area after cycling. Hydrogen desorption peaks in the CVs existed even after 100 cycles from 0.6 to 1.8V for Pt on ITO. On the other hand, most of the active surface area was lost after 100 cycles of the Hispec 4000 catalyst. The 40wt.% Pt on Vulcan made in-house also lost most of its active area after only 50 cycles. Pt on ITO was significantly more electrochemically stable than both Hispec 4000 and Pt on Vulcan XC-72R. In this study, it was found that the Pt on ITO had average crystallite sizes of 13nm for Pt and 38nm for ITO. Pt on ITO showed extremely high thermal stability, with only {approx}1wt.% loss of material for ITO versus {approx}57wt.% for Hispec 4000 on heating to 1000{sup o}C. The TEM data show Pt clusters dispersed on small crystalline ITO particles. The SEM data show octahedral shaped ITO particles supporting Pt. (author)

  12. Structure, stability and electrochromic properties of polyaniline film covalently bonded to indium tin oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wenzhi, E-mail: zhangwz@xatu.edu.cn [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Ju, Wenxing; Wu, Xinming; Wang, Yan; Wang, Qiguan; Zhou, Hongwei; Wang, Sumin [Key Laboratory for Photoelectric Functional Materials and Devices of Shaanxi Province, School of Materials and Chemical Engineering, Xi’an Technological University, Xi’an 710021 (China); Hu, Chenglong [Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, School of Chemistry and Environmental Engineering, Jianghan University, Wuhan 430056 (China)

    2016-03-30

    Graphical abstract: A chemical bonding approach was proposed to prepare the PANI film covalently bonded to ITO substrate and the film exhibited high electrochemical activities and stability compared with that obtained by conventional film-forming approach. - Highlights: • The PANI film covalently bonded to ITO substrate was prepared using ABPA as modifier. • The oxidative potentials of the obtained PANI film were decreased. • The obtained PANI film exhibits high electrochemical activities and stability. - Abstract: Indium tin oxide (ITO) substrate was modified with 4-aminobenzylphosphonic acid (ABPA), and then the polyaniline (PANI) film covalently bonded to ITO substrate was prepared by the chemical oxidation polymerization. X-ray photoelectron spectroscopy (XPS), attenuated total reflection infrared (ATR-IR) spectroscopy, and atomic force microscopy (AFM) measurements demonstrated that chemical binding was formed between PANI and ABPA-modified ITO surface, and the maximum thickness of PANI layer is about 30 nm. The adhesive strength of PANI film on ITO substrate was tested by sonication. It was found that the film formed on the modified ITO exhibited a much better stability than that on bare one. Cyclic voltammetry (CV) and UV–vis spectroscopy measurements indicated that the oxidative potentials of PANI film on ABPA-modified ITO substrate were decreased and the film exhibited high electrochemical activities. Moreover, the optical contrast increased from 0.58 for PANI film (without ultrasound) to 1.06 for PANI film (after ultrasound for 60 min), which had an over 83% enhancement. The coloration time was 20.8 s, while the bleaching time was 19.5 s. The increase of electrochromic switching time was due to the lower ion diffusion coefficient of the large cation of (C{sub 4}H{sub 9}){sub 4}N{sup +} under the positive and negative potentials as comparison with the small Li{sup +} ion.

  13. Real-time monitoring of indium tin oxide laser ablation in liquid crystal display patterning

    International Nuclear Information System (INIS)

    Hong, M.H.; Lu, Y.F.; Meng, M.; Low, T.S.

    1998-01-01

    Audible acoustic wave detection is applied to investigate KrF excimer laser ablation of Indium Tin Oxide (ITO) thin film layer for Liquid Crystal Display (LCD) patterning. It is found that there is no acoustic wave generation if laser fluence is lower than ITO ablation threshold. For laser fluence higher than the threshold, audible acoustic wave will be detected due to shock wave generation during ITO laser ablation. The amplitude of the acoustic wave is closely related to the laser ablation rate. With more laser pulse applied, the amplitude is dropped to zero because the ITO layer is completely removed. However, if laser fluence is increased higher than ablation threshold for glass substrate, the amplitude is also dropped with pulse number but not to zero. It is due to laser ablation of ITO layer and glass substrate at the same time. Since the thickness of ITO layer is in a scale of 100 nm, laser interaction with glass substrate will happen even at the first pulse of higher laser fluence irradiation. Laser ablation induced ITO plasma emission spectrum in visible light region is analyzed by an Optical Multi-channel Analyzer (OMA). Specific spectral lines are In I (325.8, 410.2 and 451.1 nm) and In II 591.1 nm. Spectral intensities of 410.2 and 451.1 nm lines are selected to characterize the evolution of ITO plasma intensity with laser fluence and pulse number. It is found that the spectral intensities are reduced to zero with laser pulse number. It is also found that spectral lines other than ITO plasma will appear for laser fluence higher than ablation threshold for glass substrate. Threshold fluences for glass and ITO ablation are estimated for setting up a parameter window to control LCD patterning in real-time

  14. Surface properties of indium tin oxide treated by Cl2 inductively coupled plasma

    International Nuclear Information System (INIS)

    He, Kongduo; Yang, Xilu; Yan, Hang; Gong, Junyi; Zhong, Shaofeng; Ou, Qiongrong; Liang, Rongqing

    2014-01-01

    Graphical abstract: - Highlights: • The work function of chlorinated ITO increases initially by up to 1 eV. • The chlorinated ITO keeps an increment of work function of 0.3 eV after 100 days. • The WF decrease curves can be fitted with double exponential functions. • The desorption of unstable Cl in the surface leads to the rapid decrease of WF. • The core levels of In 3d5 and Sn 3d5 and O 1s shift toward higher binding energies. - Abstract: The effects of Cl 2 inductively coupled plasma (ICP) treatment on the time dependence of work function (WF) and surface properties of indium tin oxide (ITO) were investigated. Kelvin probe (KP) measurements show that the WF after Cl 2 ICP treatment is close to 5.9 eV. The WF decrease curve of Cl 2 plasma treated ITO is fitted with double exponential functions with an adjusted R-square of 0.99. The mechanism under the decrease process is discussed by X-ray photoelectron spectroscopy (XPS). The ITO WF decrease after Cl 2 ICP treatment performs much better than that after O 2 ICP treatment and the chlorinated ITO keeps a WF increment of 0.3 eV compared with that without plasma treatment after 100 days. Other properties of chlorinated ITO surface such as morphology and transmittance change slightly. The results are significant for the understanding of degradation of Cl 2 plasma treated ITO and the fabrication of organic semiconductor devices

  15. Surface properties of indium tin oxide treated by Cl{sub 2} inductively coupled plasma

    Energy Technology Data Exchange (ETDEWEB)

    He, Kongduo; Yang, Xilu; Yan, Hang; Gong, Junyi; Zhong, Shaofeng [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Ou, Qiongrong, E-mail: qrou@fudan.edu.cn [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China); Liang, Rongqing [Department of Light Sources and Illuminating Engineering, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433 (China)

    2014-10-15

    Graphical abstract: - Highlights: • The work function of chlorinated ITO increases initially by up to 1 eV. • The chlorinated ITO keeps an increment of work function of 0.3 eV after 100 days. • The WF decrease curves can be fitted with double exponential functions. • The desorption of unstable Cl in the surface leads to the rapid decrease of WF. • The core levels of In 3d5 and Sn 3d5 and O 1s shift toward higher binding energies. - Abstract: The effects of Cl{sub 2} inductively coupled plasma (ICP) treatment on the time dependence of work function (WF) and surface properties of indium tin oxide (ITO) were investigated. Kelvin probe (KP) measurements show that the WF after Cl{sub 2} ICP treatment is close to 5.9 eV. The WF decrease curve of Cl{sub 2} plasma treated ITO is fitted with double exponential functions with an adjusted R-square of 0.99. The mechanism under the decrease process is discussed by X-ray photoelectron spectroscopy (XPS). The ITO WF decrease after Cl{sub 2} ICP treatment performs much better than that after O{sub 2} ICP treatment and the chlorinated ITO keeps a WF increment of 0.3 eV compared with that without plasma treatment after 100 days. Other properties of chlorinated ITO surface such as morphology and transmittance change slightly. The results are significant for the understanding of degradation of Cl{sub 2} plasma treated ITO and the fabrication of organic semiconductor devices.

  16. Effective Electrochemistry of Human Sulfite Oxidase Immobilized on Quantum-Dots-Modified Indium Tin Oxide Electrode.

    Science.gov (United States)

    Zeng, Ting; Leimkühler, Silke; Koetz, Joachim; Wollenberger, Ulla

    2015-09-30

    The bioelectrocatalytic sulfite oxidation by human sulfite oxidase (hSO) on indium tin oxide (ITO) is reported, which is facilitated by functionalizing of the electrode surface with polyethylenimine (PEI)-entrapped CdS nanoparticles and enzyme. hSO was assembled onto the electrode with a high surface loading of electroactive enzyme. In the presence of sulfite but without additional mediators, a high bioelectrocatalytic current was generated. Reference experiments with only PEI showed direct electron transfer and catalytic activity of hSO, but these were less pronounced. The application of the polyelectrolyte-entrapped quantum dots (QDs) on ITO electrodes provides a compatible surface for enzyme binding with promotion of electron transfer. Variations of the buffer solution conditions, e.g., ionic strength, pH, viscosity, and the effect of oxygen, were studied in order to understand intramolecular and heterogeneous electron transfer from hSO to the electrode. The results are consistent with a model derived for the enzyme by using flash photolysis in solution and spectroelectrochemistry and molecular dynamic simulations of hSO on monolayer-modified gold electrodes. Moreover, for the first time a photoelectrochemical electrode involving immobilized hSO is demonstrated where photoexcitation of the CdS/hSO-modified electrode lead to an enhanced generation of bioelectrocatalytic currents upon sulfite addition. Oxidation starts already at the redox potential of the electron transfer domain of hSO and is greatly increased by application of a small overpotential to the CdS/hSO-modified ITO.

  17. Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Navamathavan, R. [Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Jeju 690-756 (Korea, Republic of)], E-mail: n_mathavan@yahoo.com; Choi, Chi Kyu [Nano Thin Film Materials Laboratory, Department of Physics, Cheju National University, Jeju 690-756 (Korea, Republic of); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)

    2009-05-05

    We report on enhancement-mode thin film transistors (TFTs) using ZnO as an active channel layer deposited by radio frequency (rf) magnetron sputtering at 300 deg. C. The TFT structure consisted of ZnO as a channel, SiN{sub x} as a gate insulator and indium tin oxide (ITO) as a gate which were deposited onto a Corning glass substrate. X-ray diffraction pattern revealed that dense columnar structure of closely packed ZnO nano grains along the c-axis. The transfer characteristics of a typical ZnO TFT exhibited a field effect mobility of 31 cm{sup 2}/V s, a drain current on/off ratio of 10{sup 4}, the low off-current value in the order of 10{sup -10} A, and a threshold voltage of 1.7 V. The transparent ZnO TFT exhibited n-channel enhancement mode behavior.

  18. Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment

    Energy Technology Data Exchange (ETDEWEB)

    Krylov, P. N., E-mail: ftt@uni.udm.ru; Zakirova, R. M.; Fedotova, I. V. [Udmurt State University (Russian Federation)

    2013-10-15

    A variation in the properties of indium-tin-oxide (ITO) films obtained by the method of reactive magnetron sputtering with simultaneous ion treatment is reported. The ITO films feature the following parameters in the optical range of 450-1100 nm: a transmission coefficient of 80%, band gap of 3.50-3.60 eV, and a refractive index of 1.97-2.06. All characteristics of the films depend on the ion-treatment current. The latter, during the course of deposition, reduces the resistivity of the ITO films with the smallest value of the resistivity being equal to 2 Multiplication-Sign 10{sup -3} {Omega} cm. The degradation of films with a high resistivity when kept in air is observed.

  19. Sputter deposited titanium disilicide at high substrate temperatures

    Science.gov (United States)

    Tanielian, M.; Blackstone, S.; Lajos, R.

    1984-08-01

    Titanium disilicide films were sputter deposited from a composite TiSi2.1 target on bare silicon wafers both at room temperature and at 600 °C. The room temperature as-deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as-deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.

  20. Probing of O2 vacancy defects and correlated magnetic, electrical and photoresponse properties in indium-tin oxide nanostructures by spectroscopic techniques

    Science.gov (United States)

    Ghosh, Shyamsundar; Dev, Bhupendra Nath

    2018-05-01

    Indium-tin oxide (ITO) 1D nanostructures with tunable morphologies i.e. nanorods, nanocombs and nanowires are grown on c-axis (0 0 0 1) sapphire (Al2O3) substrate in oxygen deficient atmosphere through pulsed laser deposition (PLD) technique and the effect of oxygen vacancies on optical, electrical, magnetic and photoresponse properties is investigated using spectroscopic methods. ITO nanostructures are found to be enriched with significant oxygen vacancy defects as evident from X-ray photoelectron and Raman spectroscopic analysis. Photoluminescence spectra exhibited intense mid-band blue emission at wavelength of region of 400-450 nm due to the electronic transition from conduction band maxima (CBM) to the singly ionized oxygen-vacancy (VO+) defect level within the band-gap. Interestingly, ITO nanostructures exhibited significant room-temperature ferromagnetism (RTFM) and the magnetic moment found proportional to concentration of VO+ defects which indicates VO+ defects are mainly responsible for the observed RTFM in nanostructures. ITO nanowires being enriched with more VO+ defects exhibited strongest RTFM as compared to other morphologies. Current voltage (I-V) characteristics of ITO nanostructures showed an enhancement of current under UV light as compared to dark which indicates such 1D nanostructure can be used as photovoltaic material. Hence, the study shows that there is ample opportunity to tailor the properties of ITOs through proper defect engineering's and such photosensitive ferromagnetic semiconductors might be promising for spintronic and photovoltaic applications.

  1. Role of indium tin oxide electrode on the microstructure of self-assembled WO3-BiVO4 hetero nanostructures

    Science.gov (United States)

    Song, Haili; Li, Chao; Van, Chien Nguyen; Dong, Wenxia; Qi, Ruijuan; Zhang, Yuanyuan; Huang, Rong; Chu, Ying-Hao; Duan, Chun-Gang

    2017-11-01

    Self-assembled WO3-BiVO4 nanostructured thin films were grown on a (001) yttrium stabilized zirconia (YSZ) substrate by the pulsed laser deposition method with and without the indium tin oxide (ITO) bottom electrode. Their microstructures including surface morphologies, crystalline phases, epitaxial relationships, interface structures, and composition distributions were investigated by scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray energy dispersive spectroscopy. In both samples, WO3 formed nanopillars embedded into the monoclinic BiVO4 matrix with specific orientation relationships. In the sample with the ITO bottom electrode, an atomically sharp BiVO4/ITO interface was formed and the orthorhombic WO3 nanopillars were grown on a relaxed BiVO4 buffer layer with a mixed orthorhombic and hexagonal WO3 transition layer. In contrast, a thin amorphous layer appears at the interfaces between the thin film and the YSZ substrate in the sample without the ITO electrode. In addition, orthorhombic Bi2WO6 lamellar nanopillars were formed between WO3 and BiVO4 due to interdiffusion. Such a WO3-Bi2WO6-BiVO4 double heterojunction photoanode may promote the photo-generated charge separation and further improve the photoelectrochemical water splitting properties.

  2. Effect of applied voltage on the structural properties of SnO2 nanostuctures grown on indium-tin-oxide coated glass substrates.

    Science.gov (United States)

    Lee, Dea Uk; Yun, Dong Yeol; No, Young Soo; Hwang, Jun Ho; Lee, Chang Hun; Kim, Tae Whan

    2013-11-01

    SnO2 nanostuctures were formed on indium-tin-oxide (ITO)-coated glass substrates by using an electrochemical deposition (ECD) method. X-ray photoelectron spectroscopy (XPS) spectra showed the existence of elemental Sn and O in the samples, indicative of the formation of SnO2 materials. An XPS spectrum showing the O 1s peak at a binding energy of 531.5 eV indicated that the oxygen atoms were bonded to the SnO2. Field-emission scanning electron microscopy (FE-SEM) images showed that the samples formed by using the ECD method had SnO2 nanostructures with a size between 280 and 350 nm. FE-SEM images showed that the size of the SnO2 nanostructures formed at 65 degrees C for 30 min increased with decreasing applied voltage. X-ray diffraction (XRD) patterns showed that the SnO2 nanostrucures had tetragonal structures with cell parameters of a = 4.738 A and c = 3.187 A. XRD results showed that the peak intensity of the (110) plane increased with decreasing applied voltage, indicative of a preferencial orientation of the (110) plane.

  3. Electrochemical polymerization of an aniline-terminated self-assembled monolayer on indium tin oxide electrodes and its effect on polyaniline electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Cruz-Silva, Rodolfo [Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEM. Av. Universidad 1001Col. Chamilpa, CP 62210, Cuernavaca, Mor. (Mexico)], E-mail: rcruzsilva@uaem.mx; Nicho, Maria E.; Resendiz, Mary C.; Agarwal, Vivechana [Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEM. Av. Universidad 1001Col. Chamilpa, CP 62210, Cuernavaca, Mor. (Mexico); Castillon, Felipe F.; Farias, Mario H. [Centro de Ciencias de la Materia Condensada de la UNAM, Apdo. Postal 2681 C.P. 22800 Ensenada, B.C. (Mexico)

    2008-06-02

    Indium tin oxide (ITO) transparent electrodes were surface modified by a self-assembled monolayer of N-phenyl-{gamma}-aminopropyl-trimethoxysilane (PAPTS). Cyclic voltammetry of the PAPTS monolayer in aniline-free aqueous electrolyte showed the typical shape of a surface-confined monomer, due to the oxidation of the aniline moieties. This process resulted in a two-dimensional polyaniline film with uniform thickness of 1.3 nm, as measured by atomic force microscopy. X-ray photoelectron and UV-visible spectroscopic techniques confirm the formation of a conjugated polymer film. The influence of the surface modification of ITO electrodes on polyaniline electrochemical deposition was also studied. The initial oxidation rate of aniline increased in the PAPTS-modified ITO electrodes, although the overall film formation rate was lower than that of unmodified ITO electrodes. The morphology of the electrodeposited polyaniline films on PAPTS-modified and unmodified ITO electrodes was studied by atomic force microscopy. Films of smaller grain were grown in the PAPTS-modified ITO as compared to films grown on unmodified ITO. A blocking effect due to the propyl spacer is proposed to explain the reduced electron transfer in PAPTS-modified electrodes.

  4. Development of a reagentless electrochemiluminescent electrode for flow injection analysis using copolymerised luminol/aniline on nano-TiO2 functionalised indium-tin oxide glass.

    Science.gov (United States)

    Liu, Chao; Wei, Xiuhua; Tu, Yifeng

    2013-07-15

    In this study, a nano-structured copolymer of luminol/aniline (PLA) was deposited onto nano-TiO2-functionalised indium tin oxide (ITO)-coated glass by electrochemical polymerisation using cyclic voltammetry (CV). The resulting reagentless electrochemiluminescent (ECL) electrode (ECLode) can be used for flow injection analysis (FIA). The properties of the ECLode were characterised by CV, electrochemical impedance spectroscopy (EIS) and scanning electron microscopy (SEM). The ECLode has high background ECL emission as well as excellent stability and reproducibility, and yielding sensitive response towards target analytes. The ECL emissions of the ECLode were 50 times higher than PLA/ITO, and 500 times higher than polyluminol (PL)/ITO. The ECLode showed sensitive responses to reactive oxygen species (ROSs), permitting its application for determination of antioxidants by quenching. Under optimised conditions, an absolute detection limit of 69.9 pg was obtained for resveratrol, comparable to the highest levels of sensitivity achieved by other methods. Thus, the gross antioxidant content of red wine was determined, with satisfactory recoveries between 87.6% and 108.3%. These results suggest a bright future for the use of the ECLode for single-channel FIA due to its high sensitivity, accuracy and reproducibility. Copyright © 2013 Elsevier B.V. All rights reserved.

  5. An Optically-Transparent Aptamer-Based Detection System for Colon Cancer Applications Using Gold Nanoparticles Electrodeposited on Indium Tin Oxide

    Directory of Open Access Journals (Sweden)

    Mojgan Ahmadzadeh-Raji

    2016-07-01

    Full Text Available In this paper, a label-free aptamer based detection system (apta-DS was investigated for detecting colon cancer cells. For this purpose, we employed an aptamer specific to colon cancer cells like HCT116 expressing carcinoembryonic antigen (CEA on their surfaces. Capture aptamers were covalently immobilized on the surface of gold nanoparticles (GNPs through self-assembly monolayer of 11-mercaptoundecanoic acid (11-MUA activated with EDC (1-Ethyl-3-[3-dimethylaminopropyl]carbodiimide/N-hydroxysuccinimide (NHS. The cyclic voltammetry (CV and chronopotentiometry (CP methods were used for electrodeposition of GNPs on the surface of indium tin oxide (ITO. In this work, the CV method was also used to demonstrate the conjugation of GNPs and aptamers and identify the cancer cell capturing events. Additionally, Field Emission Scanning Electron Microscopy (FE-SEM confirmed the deposition of GNPs on ITO and the immobilization of aptamer on the apta-DS. The electrodeposited GNPs played the role of nanoprobes for cancer cell targeting without losing the optical transparency of the ITO substrate. A conventional optical microscope also verified the detection of captured cancer cells. Based on this study’s results relying on electrochemical and optical microscopic methods, the proposed apta-DS is reliable and high sensitive with a LOD equal to 6 cell/mL for colon cancer detection.

  6. Immobilization of azurin with retention of its native electrochemical properties at alkylsilane self-assembled monolayer modified indium tin oxide

    International Nuclear Information System (INIS)

    Ashur, Idan; Jones, Anne K.

    2012-01-01

    Highlights: ► Immobilization of azurin at indium tin oxide causes modification of the native redox properties. ► Azurin was immobilized at alkylsilane self-assembled monolayer on indium tin oxide. ► Native, solution redox properties are retained for the immobilized protein on the SAM. ► Technique should be widely applicable to other redox proteins. - Abstract: Indium tin oxide (ITO) is a promising material for developing spectroelectrochemical methods due to its combination of excellent transparency in the visible region and high conductivity over a broad range of potential. However, relatively few examples of immobilization of redox proteins at ITO with retention of the ability to transfer electrons with the underlying material with native characteristics have been reported. In this work, we utilize an alkylsilane functionalized ITO surface as a biocompatible interface for immobilization of the blue copper protein azurin. Adsorption of azurin at ITO as well as ITO coated with self-assembled monolayers of (3-mercaptopropyl)trimethoxysilane (MPTMS) and n-decyltrimethoxysilane (DTMS) was achieved, and immobilized protein probed using protein film electrochemistry. The native redox properties of the protein were perturbed by adsorption directly to ITO or to the MPTMS layer on an ITO surface. However, azurin adsorbed at a DTMS covered ITO surface retained native electrochemical properties (E 1/2 = 122 ± 5 mV vs. Ag/AgCl) and could exchange electrons directly with the underlying ITO layer without need for an intervening chemical mediator. These results open new opportunities for immobilizing functional redox proteins at ITO and developing spectroelectrochemical methods for investigating them.

  7. Surface Modification of Indium Tin Oxide Nanoparticles to Improve Its Distribution in Epoxy-Silica Polymer Matrix

    Directory of Open Access Journals (Sweden)

    Mostafa Jafari

    2014-10-01

    Full Text Available A semiconducting nanoparticle indium tin oxide (ITO was modified with silane groups and for this purpose trimethoxysilane (TMOS precursor was used under specific experimental conditions for surface modification of ITO nanoparticles. It is found that the modification of ITO nanoparticles increases the interactions between the filler and the matrix and subsequently improves the distibution of indium tin oxide nanoparticles in the polymer matrix. The epoxisilica polymer matrix was produced using trimethoxysilane and 3-glycidyloxypropyl trimethoxysilane precursors and ethylenediamine (EDA as curing agent at low temperature by sol-gel process. The sol-gel process was very useful due to its easily controllable process, solution concentration and homogeneity without using expensive and complicated equipments in comparison with other methods. Then, Fourier transform infrared (FTIR spectroscopy was employed to study the formation of Si-O-Si and Si-OH groups on ITO nanoparticles. X-Ray diffraction (XRD technique and thermal gravimetric analysis (TGA were employed to investigate the modification and weight loss of the modified ITO, respectively, as an indication of the presence of organic groups on these nanoparticles. The separation analyzer tests were performed to check the stability of the nanoparticles suspension and it revealed that due to better interaction of nanoparticles with the polymer matrix the stability of modified ITO suspention is higher than the unmodified sample. The morphology and particle distribution were determined by scanning electron microscopy (SEM. It was found that the distibution of modified indium tin oxide in epoxy-silica polymer matrix was improved in comparison with pure ITO.

  8. Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

    Science.gov (United States)

    Ho, Szuheng; Yu, Hyeonggeun; So, Franky

    2017-11-01

    Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

  9. Broader color gamut of color-modulating optical coating display based on indium tin oxide and phase change materials.

    Science.gov (United States)

    Ni, Zhigang; Mou, Shenghong; Zhou, Tong; Cheng, Zhiyuan

    2018-05-01

    A color-modulating optical coating display based on phase change materials (PCM) and indium tin oxide (ITO) is fabricated and analyzed. We demonstrate that altering the thickness of top-ITO in this PCM-based display device can effectively change color. The significant role of the top-ITO layer in the thin-film interference in this multilayer system is confirmed by experiment as well as simulation. The ternary-color modulation of devices with only 5 nano thin layer of phase change material is achieved. Furthermore, simulation work demonstrates that a stirringly broader color gamut can be obtained by introducing the control of the top-ITO thickness.

  10. All solution roll-to-roll processed polymer solar cells free from indium-tin-oxide and vacuum coating steps

    DEFF Research Database (Denmark)

    Krebs, Frederik C

    2009-01-01

    of a bottom electrode comprising silver nanoparticles on a 130 micron thick polyethyleneternaphthalate (PEN) substrate. Subsequently an electron transporting layer of zinc oxide nanoparticles was applied from solution followed by an active layer of P3HT-PCBM and a hole transporting layer of PEDOT......, 3 and 8 stripes. All five layers in the device were processed from solution in air and no vacuum steps were employed. An additional advantage is that the use of indium-tin-oxide (ITO) is avoided in this process. The devices were tested under simulated sunlight (1000 W m−2, AM1.5G) and gave a typical...

  11. Three-dimensionally embedded indium tin oxide (ITO) films in photosensitive glass: a transparent and conductive platform for microdevices

    International Nuclear Information System (INIS)

    Beke, S.; Sugioka, K.; Midorikawa, K.; Koroesi, L.; Dekany, I.

    2011-01-01

    A new method for embedding transparent and conductive two- and three-dimensional microstructures in glass is presented. We show that the internal surface of hollow structures fabricated by femtosecond-laser direct writing inside the photosensitive glass can be coated by indium tin oxide (Sn-doped In 2 O 3 , ITO) using a sol-gel process. The idea of combining two transparent materials with different electrical properties, i.e., insulating and conductive, is very promising and hence it opens new prospects in manufacturing cutting edge microdevices, such as lab-on-a-chips (LOCs) and microelectromechanical systems (MEMS). (orig.)

  12. Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

    International Nuclear Information System (INIS)

    Auciello, O.; Ameen, M.S.; Kingon, A.I.

    1989-01-01

    Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

  13. Sputter deposition system for controlled fabrication of multilayers

    International Nuclear Information System (INIS)

    Di Nardo, R.P.; Takacs, P.Z.; Majkrzak, C.F.; Stefan, P.M.

    1985-06-01

    A detailed description of a sputter deposition system constructed specifically for the fabrication of x-ray and neutron multilayer monochromators and supermirrors is given. One of the principal design criteria is to maintain precise control of film thickness and uniformity over large substrate areas. Regulation of critical system parameters is fully automated so that response to feedback control information is rapid and complicated layer thickness sequences can be deposited accurately and efficiently. The use of either dc or rf magnetron sources makes it possible to satisfy the diverse material requirements of both x-ray and neutron optics

  14. Indium tin oxide thin film strain gages for use at elevated temperatures

    Science.gov (United States)

    Luo, Qing

    A robust ceramic thin film strain gage based on indium-tin-oxide (ITO) has been developed for static and dynamic strain measurements in advanced propulsion systems at temperatures up to 1400°C. These thin film sensors are ideally suited for in-situ strain measurement in harsh environments such as those encountered in the hot sections of gas turbine engines. A novel self-compensation scheme was developed using thin film platinum resistors placed in series with the active strain element (ITO) to minimize the thermal effect of strain or apparent strain. A mathematical model as well as design rules were developed for the self-compensated circuitry using this approach and close agreement between the model and actual static strain results has been achieved. High frequency dynamic strain tests were performed at temperatures up to 500°C and at frequencies up to 2000Hz to simulate conditions that would be encountered during engine vibration fatigue. The results indicated that the sensors could survive extreme test conditions while maintaining sensitivity. A reversible change in sign of the piezoresistive response from -G to +G was observed in the vicinity of 950°C, suggesting that the change carrier responsible for conduction in the ITO gage had been converted from a net "n-carrier" to a net "p-carrier" semiconductor. Electron spectroscopy for chemical analysis (ESCA) of the ITO films suggested they experienced an interfacial reaction with the Al2O3 substrate at 1400°C. It is likely that oxygen uptake from the substrate is responsible for stabilizing the ITO films to elevated temperatures through the interfacial reaction. Thermo gravimetric analysis of ITO films on alumina at elevated temperatures showed no sublimation of ITO films at temperature up to 1400°C. The surface morphology of ITO films heated to 800, 1200 and 1400°C were also evaluated by atomic force microscopy (AFM). A linear current-voltage (I--V) characteristic indicated that the contact interface

  15. Electrochemical impedance spectroscopy investigation on indium tin oxide films under cathodic polarization in NaOH solution

    International Nuclear Information System (INIS)

    Gao, Wenjiao; Cao, Si; Yang, Yanze; Wang, Hao; Li, Jin; Jiang, Yiming

    2012-01-01

    The electrochemical corrosion behaviors of indium tin oxide (ITO) films under the cathodic polarization in 0.1 M NaOH solution were investigated by electrochemical impedance spectroscopy. The as-received and the cathodically polarized ITO films were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction for morphological, compositional and structural studies. The results showed that ITO films underwent a corrosion process during the cathodic polarization and the main component of the corrosion products was body-centered cubic indium. The electrochemical impedance parameters were related to the effect of the cathodic polarization on the ITO specimens. The capacitance of ITO specimens increased, while the charge transfer resistance and the inductance decreased with the increase of the polarization time. The proposed mechanism indicated that the corrosion products (metallic indium) were firstly formed during the cathodic polarization and then absorbed on the surface of the ITO film. As the surface was gradually covered by indium particles, the corrosion process was suppressed. - Highlights: ► Cathodic polarization of indium tin oxide (ITO) in 0.1 M NaOH. ► Cathodic polarization studied with electrochemical impedance spectroscopy. ► ITO underwent a corrosion attack during cathodic polarization, indium was observed. ► Electrochemical parameters of ITO were obtained using equivalent electrical circuit. ► A corrosion mechanism is proposed.

  16. High quality aluminium doped zinc oxide target synthesis from nanoparticulate powder and characterisation of sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Isherwood, P.J.M., E-mail: P.J.M.Isherwood@lboro.ac.uk [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Neves, N. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Bowers, J.W. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Newbatt, P. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Walls, J.M. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom)

    2014-09-01

    Nanoparticulate aluminium-doped zinc oxide powder was synthesised through detonation and subsequent rapid quenching of metallic precursors. This technique allows for precise compositional control and rapid nanoparticle production. The resulting powder was used to form sputter targets, which were used to deposit thin films by radio frequency sputtering. These films show excellent sheet resistance and transmission values for a wide range of deposition temperatures. Crystal structure analysis shows that crystals in the target have a random orientation, whereas the crystals in the films grow perpendicular to the substrate surface and propagate preferentially along the (002) axis. Higher temperature deposition reduces crystal quality with a corresponding decrease in refractive index and an increase in sheet resistance. Films deposited between room temperature and 300 °C were found to have sheet resistances equivalent to or better than indium tin oxide films for a given average transmission value. - Highlights: • Nanoparticulate AZO powder was used to produce sputter targets. • The powder synthesis technique allows for precise compositional control. • Sputtered films show excellent optical, electronic and structural properties. • High temperature films show reduced electrical and structural quality. • For a given transmission, films show equivalent sheet resistances to ITO.

  17. Krypton-85 storage in sputter-deposited amorphous metals

    International Nuclear Information System (INIS)

    Tingey, G.L.; McClanahan, E.D.; Lytle, J.M.; Gordon, N.R.; Knoll, R.W.

    1982-06-01

    After comparing options for storing radioactive krypton gas, the United States Department of Energy selected ion implantation of the gas into a sputter-deposited metal matrix as the reference process. This technique is being developed with pilot-scale testing and further characterization of the deposited product. The process involves implanting krypton atoms into a growing deposit during the sputtering process. An amorphous metal deposit of nominal composition Ni 0 81 La 0 09 Kr 0 10 has been selected for further studies because of the high krypton loading, high sputtering yield, relatively low cost of the metallic components, resistance to corrosion, and stability of the product. The krypton release from this amorphous metal is described as an activated diffusion process which increases linearly with the square root of time. Studies of krypton release rate as a function of temperature were completed and an activation energy for the diffusion of 70 kcal/mole obtained. From these data, we estimated that the krypton release during the first ten years would be 0.5% for a maximum temperature of 350 0 C. The actual release of the krypton during storage was projected to be lower by a factor of 10 7 with the maximum temperature only 220 0 C. Thermal analysis studies show two energy releases occurring with krypton-containing alloys: one associated with recrystallization of the amorphous alloy and a second associated with krypton release. The total energy release between 100 and 800 0 C was less than 50 cal/g. Estimates are given for the cost of operation of the ion implantation process for solidification of the krypton-85 from a 2000-tonne heavy metal/year reprocessing plant. The present value costs, in 1981 dollars including capital and operating costs and assuming a 30-year life, are about $26M for the lifetime of the plant. Annual energy consumption of the process was estimated to be 3.9 M kWh/year

  18. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-01-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  19. Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

    International Nuclear Information System (INIS)

    Besland, M.P.; Djani-ait Aissa, H.; Barroy, P.R.J.; Lafane, S.; Tessier, P.Y.; Angleraud, B.; Richard-Plouet, M.; Brohan, L.; Djouadi, M.A.

    2006-01-01

    Bi 4-x La x Ti 3 O 12 (BLT x ) (x = 0 to 1) thin films were grown on silicon (100) and platinized substrates Pt/TiO 2 /SiO 2 /Si using RF diode sputtering, magnetron sputtering and pulsed laser deposition (PLD). Stoichiometric home-synthesized targets were used. Reactive sputtering was investigated in argon/oxygen gas mixture, with a pressure ranging from 0.33 to 10 Pa without heating the substrate. PLD was investigated in pure oxygen, at a chamber pressure of 20 Pa for a substrate temperature of 400-440 deg. C. Comparative structural, chemical, optical and morphological characterizations of BLT thin films have been performed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-Ray Photoelectron Spectroscopy (XPS), Spectro-ellipsometric measurements (SE) and Atomic Force Microscopy (AFM). Both sputtering techniques allow to obtain uniform films with thickness ranging from 200 to 1000 nm and chemical composition varying from (Bi,La) 2 Ti 3 O 12 to (Bi,La) 4.5 Ti 3 O 12 , depending on deposition pressure and RF power. In addition, BLT films deposited by magnetron sputtering, at a pressure deposition ranging from 1.1 to 5 Pa, were well-crystallized after a post-deposition annealing at 650 deg. C in oxygen. They exhibit a refractive index and optical band gap of 2.7 and 3.15 eV, respectively. Regarding PLD, single phase and well-crystallized, 100-200 nm thick BLT films with a stoichiometric (Bi,La) 4 Ti 3 O 12 chemical composition were obtained, exhibiting in addition a preferential orientation along (200). It is worth noting that BLT films deposited by magnetron sputtering are as well-crystallized than PLD ones

  20. Molecular dynamics simulation of gold cluster growth during sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, J. W., E-mail: abraham@theo-physik.uni-kiel.de; Bonitz, M., E-mail: bonitz@theo-physik.uni-kiel.de [Institut für Theoretische Physik und Astrophysik, Christian-Albrechts-Universität zu Kiel, Leibnizstraße 15, D-24098 Kiel (Germany); Strunskus, T.; Faupel, F. [Institut für Materialwissenschaft, Lehrstuhl für Materialverbunde, Christian-Albrechts-Universität zu Kiel, Kaiserstraße 2, D-24143 Kiel (Germany)

    2016-05-14

    We present a molecular dynamics simulation scheme that we apply to study the time evolution of the self-organized growth process of metal cluster assemblies formed by sputter-deposited gold atoms on a planar surface. The simulation model incorporates the characteristics of the plasma-assisted deposition process and allows for an investigation over a wide range of deposition parameters. It is used to obtain data for the cluster properties which can directly be compared with recently published experimental data for gold on polystyrene [M. Schwartzkopf et al., ACS Appl. Mater. Interfaces 7, 13547 (2015)]. While good agreement is found between the two, the simulations additionally provide valuable time-dependent real-space data of the surface morphology, some of whose details are hidden in the reciprocal-space scattering images that were used for the experimental analysis.

  1. Electronic structure evolution and energy level alignment at C60/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine]/MoOx/indium tin oxide interfaces

    Science.gov (United States)

    Liu, Xiaoliang; Yi, Shijuan; Wang, Chenggong; Wang, Congcong; Gao, Yongli

    2014-04-01

    The electronic structure evolution and energy level alignment have been investigated at interfaces comprising fullerene (C60)/4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine] (TAPC)/ molybdenum oxide (MoOx)/ indium tin oxide with ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy. With deposition of TAPC upon MoOx, a dipole of 1.58 eV was formed at the TAPC/MoOx interface due to electron transfer from TAPC to MoOx. The highest occupied molecular orbital (HOMO) onset of TAPC was pinned closed to the Fermi level, leading to a p-doped region and thus increasing the carrier concentration at the very interface. The downward band bending and the resulting built-in field in TAPC were favorable for the hole transfer toward the TAPC/MoOx interface. The rigid downward shift of energy levels of TAPC indicated no significant interface chemistry at the interface. With subsequent deposition of C60 on TAPC, a dipole of 0.27 eV was observed at the C60/TAPC heterojunction due to the electron transfer from TAPC to C60. This led to a drop of the HOMO of TAPC near the C60/TAPC interface, and hence further enhanced the band bending in TAPC. The band bending behavior was also observed in C60, similarly creating a built-in field in C60 film and improving the electron transfer away from the C60/TAPC interface. It can be deduced from the interface analysis that a promising maximum open circuit voltage of 1.5 eV is achievable in C60/TAPC-based organic photovoltaic cells.

  2. Rhodium coated mirrors deposited by magnetron sputtering for fusion applications

    International Nuclear Information System (INIS)

    Marot, L.; De Temmerman, G.; Oelhafen, P.; Covarel, G.; Litnovsky, A.

    2007-01-01

    Metallic mirrors will be essential components of all optical spectroscopy and imaging systems for ITER plasma diagnostics. Any change in the mirror performance, in particular, its reflectivity, due to erosion of the surface by charge exchange neutrals or deposition of impurities will influence the quality and reliability of the detected signals. Due to its high reflectivity in the visible wavelength range and its low sputtering yield, rhodium appears as an attractive material for first mirrors in ITER. However, the very high price of the raw material calls for using it in the form of a film deposited onto metallic substrates. The development of a reliable technique for the preparation of high reflectivity rhodium films is therefore of the highest importance. Rhodium layers with thicknesses of up to 2 μm were produced on different substrates of interest (Mo, stainless steel, Cu) by magnetron sputtering. Produced films exhibit a low roughness and crystallite size of about 10 nm with a dense columnar structure. No impurities were detected on the surface after deposition. Scratch tests demonstrate that adhesion properties increase with substrate hardness. Detailed optical characterizations of Rh-coated mirrors as well as results of erosion tests performed both under laboratory conditions and in the TEXTOR tokamak are presented in this paper

  3. Nitrogen incorporation in sputter deposited molybdenum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stöber, Laura, E-mail: laura.stoeber@tuwien.ac.at; Patocka, Florian, E-mail: florian.patocka@tuwien.ac.at; Schneider, Michael, E-mail: michael.schneider@tuwien.ac.at; Schmid, Ulrich, E-mail: ulrich.e366.schmid@tuwien.ac.at [Institute of Sensor and Actuator Systems, TU Wien, Gußhausstraße 27-29, A-1040 Vienna (Austria); Konrath, Jens Peter, E-mail: jenspeter.konrath@infineon.com; Haberl, Verena, E-mail: verena.haberl@infineon.com [Infineon Technologies Austria AG, Siemensstraße 2, 9500 Villach (Austria)

    2016-03-15

    In this paper, the authors report on the high temperature performance of sputter deposited molybdenum (Mo) and molybdenum nitride (Mo{sub 2}N) thin films. Various argon and nitrogen gas compositions are applied for thin film synthetization, and the amount of nitrogen incorporation is determined by Auger measurements. Furthermore, effusion measurements identifying the binding conditions of the nitrogen in the thin film are performed up to 1000 °C. These results are in excellent agreement with film stress and scanning electron microscope analyses, both indicating stable film properties up to annealing temperatures of 500 °C.

  4. Prediction of crack density and electrical resistance changes in indium tin oxide/polymer thin films under tensile loading

    KAUST Repository

    Mora Cordova, Angel

    2014-06-11

    We present unified predictions for the crack onset strain, evolution of crack density, and changes in electrical resistance in indium tin oxide/polymer thin films under tensile loading. We propose a damage mechanics model to quantify and predict such changes as an alternative to fracture mechanics formulations. Our predictions are obtained by assuming that there are no flaws at the onset of loading as opposed to the assumptions of fracture mechanics approaches. We calibrate the crack onset strain and the damage model based on experimental data reported in the literature. We predict crack density and changes in electrical resistance as a function of the damage induced in the films. We implement our model in the commercial finite element software ABAQUS using a user subroutine UMAT. We obtain fair to good agreement with experiments. © The Author(s) 2014 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.

  5. Surface modification of indium tin oxide films by amino ion implantation for the attachment of multi-wall carbon nanotubes

    International Nuclear Information System (INIS)

    Jiao Jiao; Liu Chenyao; Chen Qunxia; Li Shuoqi; Hu Jingbo; Li Qilong

    2010-01-01

    Amino ion implantation was carried out at the energy of 80 keV with fluence of 5 x 10 15 ions cm -2 for indium tin oxide film (ITO) coated glass, and the existence of amino group on the ITO surface was verified by X-ray photoelectron spectroscopy analysis and Fourier transform infrared spectra. Scanning electron microscopy images show that multi-wall carbon nanotubes (MWCNTs) directly attached to the amino ion implanted ITO (NH 2 /ITO) surface homogeneously and stably. The resulting MWCNTs-attached NH 2 /ITO (MWCNTs/NH 2 /ITO) substrate can be used as electrode material. Cyclic voltammetry results indicate that the MWCNTs/NH 2 /ITO electrode shows excellent electrochemical properties and obvious electrocatalytic activity towards uric acid, thus this material is expected to have potential in electrochemical analysis and biosensors.

  6. Rapid thermal processing of nano-crystalline indium tin oxide transparent conductive oxide coatings on glass by flame impingement technology

    International Nuclear Information System (INIS)

    Schoemaker, S.; Willert-Porada, M.

    2009-01-01

    Indium tin oxide (ITO) is still the best suited material for transparent conductive oxides, when high transmission in the visible range, high infrared reflection or high electrical conductivity is needed. Current approaches on powder-based printable ITO coatings aim at minimum consumption of active coating and low processing costs. The paper describes how fast firing by flame impingement is used for effective sintering of ITO-coatings applied on glass. The present study correlates process parameters of fast firing by flame impingement with optoelectronic properties and changes in the microstructure of suspension derived nano-particulate films. With optimum process parameters the heat treated coatings had a sheet resistance below 0.5 kΩ/ □ combined with a transparency higher than 80%. To characterize the influence of the burner type on the process parameters and the coating functionality, two types of methane/oxygen burner were compared: a diffusion burner and a premixed burner

  7. Wet etching mechanism and crystallization of indium-tin oxide layer for application in light-emitting diodes

    Science.gov (United States)

    Su, Shui-Hsiang; Kong, Hsieng-Jen; Tseng, Chun-Lung; Chen, Guan-Yu

    2018-01-01

    In the article, we describe the etching mechanism of indium-tin oxide (ITO) film, which was wet-etched using a solution of hydrochloric acid (HCl) and ferric chloride (FeCl3). The etching mechanism is analyzed at various etching durations of ITO films by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), and selective area diffraction (SAD) analysis. In comparison with the crystalline phase of SnO2, the In2O3 phase can be more easily transformed to In3+ and can form an inverted conical structure during the etching process. By adjusting the etching duration, the residual ITO is completely removed to show a designed pattern. This is attributed to the negative Gibbs energy of In2O3 transformed to In3+. The result also corresponds to the finding of energy-dispersive X-ray spectroscopy (EDS) analysis that the Sn/In ratio increases with increasing etching duration.

  8. Low-cost electrochemical treatment of indium tin oxide anodes for high-efficiency organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hui Cheng, Chuan, E-mail: chengchuanhui@dlut.edu.cn; Shan Liang, Ze; Gang Wang, Li; Dong Gao, Guo; Zhou, Ting; Ming Bian, Ji; Min Luo, Ying [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Tong Du, Guo, E-mail: dugt@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China)

    2014-01-27

    We demonstrate a simple low-cost approach as an alternative to conventional O{sub 2} plasma treatment to modify the surface of indium tin oxide (ITO) anodes for use in organic light-emitting diodes. ITO is functionalized with F{sup −} ions by electrochemical treatment in dilute hydrofluoric acid. An electrode with a work function of 5.2 eV is achieved following fluorination. Using this electrode, a maximum external quantum efficiency of 26.0% (91 cd/A, 102 lm/W) is obtained, which is 12% higher than that of a device using the O{sub 2} plasma-treated ITO. Fluorination also increases the transparency in the near-infrared region.

  9. Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

    KAUST Repository

    Kumar, S. R. Sarath; Hedhili, Mohamed N.; Alshareef, Husam N.; Kasiviswanathan, S.

    2010-01-01

    Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

  10. Nickel doped indium tin oxide anode and effect on dark spot development of organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, C.M. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)], E-mail: tedhsu@mail.stut.edu.tw; Kuo, C.S.; Hsu, W.C.; Wu, W.T. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)

    2009-01-01

    This article demonstrated that introducing nickel (Ni) atoms into an indium tin oxide (ITO) anode could considerably decrease ITO surface roughness and eliminate the formation of dark spots of an organic light-emitting device (OLED). A dramatic drop in surface roughness from 6.52 nm of an conventional ITO to 0.46 nm of an 50 nm Ni(50 W)-doped ITO anode was observed, and this led to an improved lifetime performance of an Alq3 based OLED device attributed to reduced dark spots. Reducing thickness of Ni-doped ITO anode was found to worsen surface roughness. Meanwhile, the existence of Ni atoms showed little effect on deteriorating the light-emitting mechanism of OLED devices.

  11. Highly efficient fully flexible indium tin oxide free organic light emitting diodes fabricated directly on barrier-foil

    International Nuclear Information System (INIS)

    Bocksrocker, Tobias; Hülsmann, Neele; Eschenbaum, Carsten; Pargner, Andreas; Höfle, Stefan; Maier-Flaig, Florian; Lemmer, Uli

    2013-01-01

    We present a simple method for the fabrication of highly conductive and fully flexible metal/polymer hybrid anodes for efficient organic light emitting diodes (OLEDs). By incorporating ultra-thin metal grids into a conductive polymer, we fabricated anodes with very low sheet resistances and high transparency. After optimizing the metallic grid, OLEDs with these hybrid anodes are superior to OLEDs with standard indium tin oxide (ITO) anodes in luminous efficacy by a factor of ∼ 2. Furthermore, the sheet resistance can be reduced by up to an order of magnitude compared to ITO on polyethylene terephthalate (PET). The devices show a very low turn-on voltage and the hybrid anodes do not change the emissive spectra of the OLEDs. In addition, we fabricated the anodes directly on a barrier foil, making the double sided encapsulation of a typically used PET-substrate unnecessary

  12. Cyclic voltammetry on n-alkylphosphonic acid self-assembled monolayer modified large area indium tin oxide electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Habich, Dana Berlinde [Siemens AG, CT T DE HW 3 Organic Electronics, Guenther-Scharowsky-Strasse 1, 91058 Erlangen (Germany); Halik, Marcus [Lehrstuhl fuer Polymerwerkstoffe, Department Werkstoffwissenschaften, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Martensstrasse 7, 91058 Erlangen (Germany); Schmid, Guenter, E-mail: guenter.schmid@siemens.com [Siemens AG, CT T DE HW 3 Organic Electronics, Guenther-Scharowsky-Strasse 1, 91058 Erlangen (Germany)

    2011-09-01

    We show stable bonding of n-alkylphosphonic acid self-assembled monolayers (SAMs) to indium tin oxide electrodes and their direct electrical characterization by cyclic voltammetry (CV). The functional coatings were investigated with regards to the addressability and stability of the electrodes, which are related to small changes in molecular layer thickness. The response of a redox active compound in solution to the faradic current is indirectly proportional to the molecular chain length of the SAMs. We observed a decrease of the electrode sensitivity with enhanced surface protection and slow long term degradation of the SAM under electrochemical stress by CV, and therefore conclude a trade-off optimum for molecules with the C10 chain.

  13. Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

    KAUST Repository

    Kumar, S. R. Sarath

    2010-09-15

    Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.

  14. Fast Inline Roll-to-Roll Printing for Indium-Tin-Oxide-Free Polymer Solar Cells Using Automatic Registration

    DEFF Research Database (Denmark)

    Hösel, Markus; Søndergaard, Roar R.; Jørgensen, Mikkel

    2013-01-01

    layer. The third and fourth layers were slot-die coated at the same time again using inline processing at a web speed of 10 mmin1 of firstly zinc oxide as the electron transport layer followed by P3HT:PCBM as the active layer. The first three layers (silver-grid/PEDOT:PSS/ZnO) comprise a generally......Fast inline roll-to-roll printing and coating on polyethylene terephthalate (PET) and barrier foil was demonstrated under ambient conditions at web speeds of 10 mmin1 for the manufacture of indium-tin-oxide-free (ITO-free) polymer solar cells comprising a 6-layer stack: silver-grid/PEDOT:PSS/ Zn...

  15. Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

    Science.gov (United States)

    Chiu, Shao-Pin; Chung, Hui-Fang; Lin, Yong-Han; Kai, Ji-Jung; Chen, Fu-Rong; Lin, Juhn-Jong

    2009-03-01

    Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few µm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grüneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

  16. Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

    International Nuclear Information System (INIS)

    Chiu, S-P; Lin, J-J; Chung, H-F; Kai, J-J; Chen, F-R; Lin, Y-H

    2009-01-01

    Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few μm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grueneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

  17. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/μc-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of θ i = 0 (normal sputtering) and θ i = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at θ i = 80 show the inclined columnar nanostructures compared to those at θ i = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/μc-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of ∝1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at θ i = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of)

    2011-09-15

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/{mu}c-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of {theta}{sub i} = 0 (normal sputtering) and {theta}{sub i} = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at {theta}{sub i} = 80 show the inclined columnar nanostructures compared to those at {theta}{sub i} = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/{mu}c-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of {proportional_to}1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at {theta}{sub i} = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Structure and soft magnetic properties of sputter deposited MnZn-ferrite films

    NARCIS (Netherlands)

    Gillies, M.F.; Coehoorn, R.; van Zon, J.B.A.D.; Alders, D.

    1998-01-01

    In this paper we report the soft magnetic properties of thin films of sputtered MnZn ferrite deposited on thermally oxidized Si substrates. A high deposition temperature, 600¿°C, together with the addition of water vapor to the sputtering gas was found to improve the initial ac permeability, µ. The

  20. Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide

    International Nuclear Information System (INIS)

    Taweesup, Kattareeya; Yamamoto, Ippei; Chikyow, Toyohiro; Lothongkum, Gobboon; Tsukagoshi, Kazutoshi; Ohishi, Tomoji; Tungasmita, Sukkaneste; Visuttipitukul, Patama; Ito, Kazuhiro; Takahashi, Makoto; Nabatame, Toshihide

    2016-01-01

    Ruthenium doped indium oxide (In_1_−_xRu_xO_y) films fabricated using DC magnetron co-sputtering with In_2O_3 and Ru targets were investigated for use as transparent conductive oxides. The In_1_−_xRu_xO_y films had an amorphous structure in the wide compositional range of x = 0.3–0.8 and had an extremely smooth surface. The transmittance and resistivity of the In_1_−_xRu_xO_y films increased as the Ru content increased. The transmittance of the In_0_._3_8Ru_0_._6_2O_y film improved to over 80% when the film thickness was less than 5 nm, while the specific resistivity (ρ) was kept to a low value of 1.6 × 10"−"4 Ω cm. Based on these experimental data, we demonstrated that thick indium tin oxide (In_0_._9Sn_0_._1O_y, ITO) (150 nm)/ultrathin In_0_._3_8Ru_0_._6_2O_y (3 nm) bilayers have a high effective work function of 5.3 eV, transmittance of 86%, and low ρ of 9.2 × 10"−"5 Ω cm. This ITO/In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate for use as an anode for organic electroluminescent devices. - Highlights: • We investigated characteristics of thick ITO/ultrathin Ru doped In_2O_3 bilayers. • Effect of Ru addition in In_2O_3 results in smooth surface because of an amorphous structure. • The In_0_._3_8Ru_0_._6_2O_y film with less than 5 nm improves to high transmittance over 80%. • ITO/In_0_._3_8Ru_0_._6_2O_y bilayer has a high effective work function of 5.3 eV. • We conclude that ITO/ultrathin In_0_._3_8Ru_0_._6_2O_y bilayer is a candidate as an anode of OEL.

  1. On the processing-structure-property relationship of ITO layers deposited on crystalline and amorphous Si

    International Nuclear Information System (INIS)

    Diplas, S.; Ulyashin, A.; Maknys, K.; Gunnaes, A.E.; Jorgensen, S.; Wright, D.; Watts, J.F.; Olsen, A.; Finstad, T.G.

    2007-01-01

    Indium-tin-oxide (ITO) antireflection coatings were deposited on crystalline Si (c-Si), amorphous hydrogenated Si (a-Si:H) and glass substrates at room temperature (RT), 160 deg. C and 230 deg. C by magnetron sputtering. The films were characterised using atomic force microscopy, transmission electron microscopy, angle resolved X-ray photoelectron spectroscopy, combined with resistance and transmittance measurements. The conductivity and refractive index as well as the morphology of the ITO films showed a significant dependence on the processing conditions. The films deposited on the two different Si substrates at higher temperatures have rougher surfaces compared to the RT ones due to the development of crystallinity and growth of columnar grains

  2. Low-damage high-throughput grazing-angle sputter deposition on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.-T.; Gajek, M.; Raoux, S. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Casu, E. A. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Politecnico di Torino, Turin 10129 (Italy)

    2013-07-15

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  3. Low-damage high-throughput grazing-angle sputter deposition on graphene

    International Nuclear Information System (INIS)

    Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

    2013-01-01

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications

  4. Low-damage high-throughput grazing-angle sputter deposition on graphene

    Science.gov (United States)

    Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

    2013-07-01

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  5. Sputter deposition of tantalum-nitride films on copper using an rf-plasma

    International Nuclear Information System (INIS)

    Walter, K.C.; Fetherston, R.P.; Sridharan, K.; Chen, A.; Shamim, M.M.; Conrad, J.R.

    1994-01-01

    A tantalum-nitride film was successfully deposited at ambient temperature on copper with a modified ion-assisted-deposition (IAD) technique. The process uses an argon and nitrogen plasma to sputter deposit from a tantalum rf-cathode and ion implant the deposited film simultaneously. Both argon and nitrogen ions are used for sputtering and ion implantation. Auger spectroscopy and x-ray diffraction were used to characterize the resulting film

  6. Effect of residual gas on structural, electrical and mechanical properties of niobium films deposited by magnetron sputtering deposition

    Science.gov (United States)

    Wang, Lanruo; Zhong, Yuan; Li, Jinjin; Cao, Wenhui; Zhong, Qing; Wang, Xueshen; Li, Xu

    2018-04-01

    Magnetron sputtering is an important method in the superconducting thin films deposition. The residual gas inside the vacuum chamber will directly affect the quality of the superconducting films. In this paper, niobium films are deposited by magnetron sputtering under different chamber residual gas conditions. The influence of baking and sputtering process on residual gas are studied as well. Surface morphology, electrical and mechanical properties of the films are analysed. The residual gas analysis result before the sputtering process could be regarded as a reference condition to achieve high quality superconducting thin films.

  7. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyun-Ju [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Prosthodontics and Restorative Science, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO{sub 3}){sub 2} + 3 mM NH{sub 4}H{sub 2}PO{sub 4}. Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings.

  8. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    International Nuclear Information System (INIS)

    Kim, Hyun-Ju; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2014-01-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO 3 ) 2 + 3 mM NH 4 H 2 PO 4 . Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings

  9. Heterojunction Diodes and Solar Cells Fabricated by Sputtering of GaAs on Single Crystalline Si

    Directory of Open Access Journals (Sweden)

    Santiago Silvestre

    2015-04-01

    Full Text Available This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: A hydrofluoric acid (HF etching treatment of the Si substrate prior to the GaAs sputter deposition and a subsequent annealing treatment of the complete layered system. A transmission electron microscopy (TEM exploration of the interface reveals the formation of a few nanometer thick SiO2 interface layer and some crystallinity degree of the GaAs layer close to the interface. It was shown that an additional HF etching treatment of the Si substrate improves the short circuit current and degrades the open circuit voltage of the solar cells. Furthermore, an additional thermal annealing step was performed on some selected samples before and after the deposition of an indium tin oxide (ITO film on top of the a-GaAs layer. It was found that the occurrence of surface related defects is reduced in case of a heat treatment performed after the deposition of the ITO layer, which also results in a reduction of the dark saturation current density and resistive losses.

  10. Comparative study of the characteristics of Ni films deposited on SiO2/Si(100) by oblique-angle sputtering and conventional sputtering

    International Nuclear Information System (INIS)

    Yu Mingpeng; Qiu Hong; Chen Xiaobai; Wu Ping; Tian Yue

    2008-01-01

    Ni films were deposited on SiO 2 /Si(100) substrates at 300 K and 573 K by oblique-angle sputtering and conventional sputtering. The films deposited at 300 K mainly have a [110] crystalline orientation in the growing direction whereas those deposited at 573 K grow with a [111] crystalline orientation in the growing direction. The film prepared only at 300 K by oblique-angle sputtering grows with a weakly preferential orientation along the incidence direction of the sputtered Ni atoms. All the films grow with thin columnar grains perpendicular to the substrate surface. The grain size of the films sputter-deposited obliquely is larger than that of the films sputter-deposited conventionally. The grain size of the Ni film does not change markedly with the deposition temperature. The film deposited at 573 K by oblique-angle sputtering has the highest saturation magnetization. For the conventional sputtering, the coercivity of the Ni film deposited at 573 K is larger than that of the film deposited at 300 K. However, for the oblique-angle sputtering, the coercivity of the Ni film is independent of the deposition temperature. All the Ni films exhibit an isotropic magnetization characteristic in the film plane

  11. Deposition temperature influence on sputtered nanogranular magnetoresistive composites

    International Nuclear Information System (INIS)

    Mujika, M.; Arana, S.; Castano, E.

    2007-01-01

    Among different physical principles magnetic sensors for low magnetic field detection can be based on, granular giant magnetoresistances have been studied due to their high sensitivity to small field changes and gradual magnetoresistance change at low fields. Following this aim, nanogranular Ag-Co thin films, deposited by DC co-sputtering from Ag and Co targets at different deposition temperatures have been tested. Samples have been grown at room temperature, 100 and 200 deg. C and annealed in a mixture of N 2 and H 2 at 200 and 300 deg. C for 45 min. The samples that have shown the best performance have been subjected to two sets of measurements where an external field has been applied in-plane and perpendicular to the film plane. The best performance has been shown by the samples deposited at room temperature and annealed at 300 deg. C, reporting a maximum value of magnetoresistance of 16.7% at 1.4 T and a linear sensitivity of 63%/T between 0.04 and 0.07 T within a magnetoresistance range varying from 1.5% to 3% when subjected to an in-plane external field

  12. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Olaya, J.J. [Departamento de Ingenieria Mecanica y Mecatronica, Universidad Nacional de Colombia, Ciudad Universitaria, Carrera 30 Numero 45-03, Bogota (Colombia); Huerta, L. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico); Rodil, S.E. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)], E-mail: ser42@iim.unam.mx; Escamilla, R. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, CU Coyoacan, Mexico D.F. 04510 (Mexico)

    2008-10-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T{sub C}). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T{sub C} values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T{sub C} was correlated to a higher contribution of the N 2p states.

  13. Superconducting niobium nitride films deposited by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Olaya, J.J.; Huerta, L.; Rodil, S.E.; Escamilla, R.

    2008-01-01

    Niobium nitride (NbN) thin films were deposited under different configurations of the magnetic field using a magnetron sputtering system. The magnetic field configuration varied from balanced to unbalanced leading to different growth conditions and film properties. The aim of the paper was to identify correlations between deposition conditions, film properties and the electrical properties, specially the superconductive critical temperature (T C ). The results suggested that there is a critical deposition condition, having an optimum ion-atom arrival ratio that promotes a well ordered and textured nanocrystalline structure (cubic phase) with the minimum residual stress and only under this condition a high critical temperature (16K) was obtained. Lower T C values around 12K were obtained for the NbN samples having a lower degree of structural perfection and texture, and a larger fraction of intergranular voids. On the other hand, analysis of valence-band spectra showed that the contribution of the Nb 4d states remained essentially constant while the higher T C was correlated to a higher contribution of the N 2p states

  14. Study on the Deposition Rate Depending on Substrate Position by Using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    Ion beams have been used for over thirty years to modify materials in manufacturing of integrated circuits, and improving the corrosion properties of surfaces. Recently, the requirements for ion beam processes are becoming especially challenging in the following areas : ultra shallow junction formation for LSI fabrication, low damage high rate ion beam sputtering and smoothing, high quality functional surface treatment for electrical and optical properties. Ion beam sputtering is an attractive technology for the deposition of thin film coatings onto a broad variety of polymer, Si-wafer, lightweight substrates. Demand for the decoration metal is increasing. In addition, lightweight of parts is important, because of energy issues in the industries. Although a lot of researches have been done with conventional PVD methods for the deposition of metal or ceramic films on the surface of the polymer, there are still adhesion problems.

  15. Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

    International Nuclear Information System (INIS)

    Tseng, Kun-San; Lo, Yu-Lung

    2013-01-01

    The optical and electrical properties of indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates using a DC magnetron sputtering technique are investigated as a function of the deposition time, the argon flow rate and the target–substrate distance. It is found that all of the ITO films contain a high fraction of amorphous phase. The volume fraction of crystallite precipitates in the amorphous host increases with an increasing deposition time or a reducing argon flow rate. The deposition time and argon flow rate have higher effects on the optical transparency of the ITO films than the target–substrate distance has. Increasing film thickness is not the only reason for the transmittance reduced. It is found that an increase of the extinction coefficient by increasing deposition time or an increase of the refractive index by decreasing argon flow rate also reduces the transmittance of thin film. For a constant deposition time, the resistivity of the ITO films reduces with a reducing argon flow rate or a reducing target–substrate distance. For a constant argon flow rate, a critical value of the deposition time exists at which both the resistivity and the effect of the target–substrate distance are minimized. Finally, it is concluded that the film resistivity has low sensitivity to the target–substrate distance if the best deposition conditions which mostly attain the lowest resistivity are matched.

  16. Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

    Science.gov (United States)

    Tseng, Kun-San; Lo, Yu-Lung

    2013-11-01

    The optical and electrical properties of indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates using a DC magnetron sputtering technique are investigated as a function of the deposition time, the argon flow rate and the target-substrate distance. It is found that all of the ITO films contain a high fraction of amorphous phase. The volume fraction of crystallite precipitates in the amorphous host increases with an increasing deposition time or a reducing argon flow rate. The deposition time and argon flow rate have higher effects on the optical transparency of the ITO films than the target-substrate distance has. Increasing film thickness is not the only reason for the transmittance reduced. It is found that an increase of the extinction coefficient by increasing deposition time or an increase of the refractive index by decreasing argon flow rate also reduces the transmittance of thin film. For a constant deposition time, the resistivity of the ITO films reduces with a reducing argon flow rate or a reducing target-substrate distance. For a constant argon flow rate, a critical value of the deposition time exists at which both the resistivity and the effect of the target-substrate distance are minimized. Finally, it is concluded that the film resistivity has low sensitivity to the target-substrate distance if the best deposition conditions which mostly attain the lowest resistivity are matched.

  17. Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tseng, Kun-San [Department of Mechanical Engineering, National Cheng Kung University, Tainan, Taiwan (China); Lo, Yu-Lung, E-mail: loyl@mail.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, Tainan, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China)

    2013-11-15

    The optical and electrical properties of indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates using a DC magnetron sputtering technique are investigated as a function of the deposition time, the argon flow rate and the target–substrate distance. It is found that all of the ITO films contain a high fraction of amorphous phase. The volume fraction of crystallite precipitates in the amorphous host increases with an increasing deposition time or a reducing argon flow rate. The deposition time and argon flow rate have higher effects on the optical transparency of the ITO films than the target–substrate distance has. Increasing film thickness is not the only reason for the transmittance reduced. It is found that an increase of the extinction coefficient by increasing deposition time or an increase of the refractive index by decreasing argon flow rate also reduces the transmittance of thin film. For a constant deposition time, the resistivity of the ITO films reduces with a reducing argon flow rate or a reducing target–substrate distance. For a constant argon flow rate, a critical value of the deposition time exists at which both the resistivity and the effect of the target–substrate distance are minimized. Finally, it is concluded that the film resistivity has low sensitivity to the target–substrate distance if the best deposition conditions which mostly attain the lowest resistivity are matched.

  18. Dust cloud evolution in sub-stellar atmospheres via plasma deposition and plasma sputtering

    Science.gov (United States)

    Stark, C. R.; Diver, D. A.

    2018-04-01

    Context. In contemporary sub-stellar model atmospheres, dust growth occurs through neutral gas-phase surface chemistry. Recently, there has been a growing body of theoretical and observational evidence suggesting that ionisation processes can also occur. As a result, atmospheres are populated by regions composed of plasma, gas and dust, and the consequent influence of plasma processes on dust evolution is enhanced. Aim. This paper aims to introduce a new model of dust growth and destruction in sub-stellar atmospheres via plasma deposition and plasma sputtering. Methods: Using example sub-stellar atmospheres from DRIFT-PHOENIX, we have compared plasma deposition and sputtering timescales to those from neutral gas-phase surface chemistry to ascertain their regimes of influence. We calculated the plasma sputtering yield and discuss the circumstances where plasma sputtering dominates over deposition. Results: Within the highest dust density cloud regions, plasma deposition and sputtering dominates over neutral gas-phase surface chemistry if the degree of ionisation is ≳10-4. Loosely bound grains with surface binding energies of the order of 0.1-1 eV are susceptible to destruction through plasma sputtering for feasible degrees of ionisation and electron temperatures; whereas, strong crystalline grains with binding energies of the order 10 eV are resistant to sputtering. Conclusions: The mathematical framework outlined sets the foundation for the inclusion of plasma deposition and plasma sputtering in global dust cloud formation models of sub-stellar atmospheres.

  19. Characteristics of indium zinc oxide films deposited using the facing targets sputtering method for OLEDs applications

    International Nuclear Information System (INIS)

    Rim, Y.S.; Kim, H.J.; Kim, K.H.

    2010-01-01

    The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates using the facing targets sputtering (FTS) system. The electrical, optical and structural properties of the IZO thin films deposited as functions of sputtering parameters on the glass and PES substrates. An optimal IZO deposition condition is fabricated for organic light-emitting device (OLED) based on glass and PES. The amorphous IZO anode-based OLEDs show superior current density and luminance characteristics.

  20. Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications

    International Nuclear Information System (INIS)

    Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Chih-Cheng; Chen, Wen-Chung; Lin, Jiun-Chiu; Wang, Ming-Hui; Zheng, Hao-Xuan; Chen, Min-Chen; Sze, Simon M.

    2017-01-01

    In this paper, we implement a post-oxidation method to modify surface characteristics of indium tin oxide (ITO) films by using an O_2 inductively coupled plasma (ICP) treatment. Based on field emission-scanning electron microscope (FE-SEM) and atomic force microscope (AFM) analysis, we found that the surface morphologies of the ITO films become slightly flatter after the O_2 plasma treatment. The optical characteristics and X-ray diffraction (XRD) experiments of either pure ITO or O_2 plasma treated ITO films were also verified. Even though the XRD results showed no difference from bulk crystallizations, the oxygen concentrations increased at the film surface after O_2 plasma treatment, according to the XPS inspection results. Moreover, this study investigated the effects of two different plasma treatment times on oxygen concentration in the ITO films. The surface sheet resistance of the plasma treated ITO films became nearly non-conductive when measured with a 4-point probe. Finally, we applied the O_2 plasma treated ITO films as the insulator in resistive random access memory (RRAM) to examine their potential for use in resistive switching storage applications. Stable resistance switching characteristics were obtained by applying the O_2 plasma treatment to the ITO-based RRAM. We also confirmed the relationship between plasma treatment time and RRAM performance. These material analyses and electrical measurements suggest possible advantages in using this plasma treatment technique in device fabrication processes for RRAM applications.

  1. Surface chemistry of carbon removal from indium tin oxide by base and plasma treatment, with implications on hydroxyl termination

    International Nuclear Information System (INIS)

    Chaney, John A.; Koh, Sharon E.; Dulcey, Charles S.; Pehrsson, Pehr E.

    2003-01-01

    The surface chemistry of carbon removal from indium tin oxide (ITO) has been investigated with Auger electron spectroscopy (AES), high-resolution electron energy loss spectroscopy (HREELS), and high-resolution energy loss spectroscopy (HR-ELS). A vibrating Kelvin probe (KP) was used to monitor the work function (PHI) of ITO after cleaning, either by base-cleaning with alcoholic-KOH or by O 2 plasma-cleaning. Base-cleaning lowered PHI ITO as seen in the KP analysis, whereas plasma-cleaning slightly increased PHI ITO by an oxidative process. The degree of PHI ITO depression by base-cleaning was seen to depend on the initial surface, but the PHI depression itself was nonreductive to the ITO, as seen in the In-MNN AES lineshape. The nonreductive depression of PHI ITO by base-cleaning was further supported by a constant charge carrier density, as estimated from the HR-ELS. Base-cleaning was slightly more effective than the oxygen plasma in removing carbon from the ITO surface. However, base-cleaning preferentially removed graphitic carbon while leaving significant hydrocarbon contaminants, as determined by vibrational analysis with HREELS. All other ITO surfaces retained a significant carbon and hydrocarbon contamination as evidenced by AES and HREELS. There was little evidence of the formation of surface hydroxyl species, as expected for such an inherently contaminated surface as ITO

  2. Better Organic Ternary Memory Performance through Self-Assembled Alkyltrichlorosilane Monolayers on Indium Tin Oxide (ITO) Surfaces.

    Science.gov (United States)

    Hou, Xiang; Cheng, Xue-Feng; Zhou, Jin; He, Jing-Hui; Xu, Qing-Feng; Li, Hua; Li, Na-Jun; Chen, Dong-Yun; Lu, Jian-Mei

    2017-11-16

    Recently, surface engineering of the indium tin oxide (ITO) electrode of sandwich-like organic electric memory devices was found to effectively improve their memory performances. However, there are few methods to modify the ITO substrates. In this paper, we have successfully prepared alkyltrichlorosilane self-assembled monolayers (SAMs) on ITO substrates, and resistive random access memory devices are fabricated on these surfaces. Compared to the unmodified ITO substrates, organic molecules (i.e., 2-((4-butylphenyl)amino)-4-((4-butylphenyl)iminio)-3-oxocyclobut-1-en-1-olate, SA-Bu) grown on these SAM-modified ITO substrates have rougher surface morphologies but a smaller mosaicity. The organic layer on the SAM-modified ITO further aged to eliminate the crystalline phase diversity. In consequence, the ternary memory yields are effectively improved to approximately 40-47 %. Our results suggest that the insertion of alkyltrichlorosilane self-assembled monolayers could be an efficient method to improve the performance of organic memory devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Effect of surface roughness and surface modification of indium tin oxide electrode on its potential response to tryptophan

    International Nuclear Information System (INIS)

    Khan, Md. Zaved Hossain; Nakanishi, Takuya; Kuroiwa, Shigeki; Hoshi, Yoichi; Osaka, Tetsuya

    2011-01-01

    Highlights: → We examine factors affecting potential response of ITO electrode to tryptophan. → Surface roughness of ITO electrode affects the stability of its rest potential. → Surface modification is effective for ITO electrode with a certain roughness. → Optimum values of work function exist for potential response of ITO to tryptophan. - Abstract: The effect of surface modification of indium tin oxide (ITO) electrode on its potential response to tryptophan was investigated for ITO substrates with different surface roughness. It was found that a small difference in surface roughness, between ∼1 and ∼2 nm of R a evaluated by atomic force microscopy, affects the rest potential of ITO electrode in the electrolyte. A slight difference in In:Sn ratio at the near surface of the ITO substrates, measured by angle-resolved X-ray photoelectron spectrometry and Auger electron spectroscopy is remarkable, and considered to relate with surface roughness. Interestingly, successive modification of the ITO surface with aminopropylsilane and disuccinimidyl suberate, of which essentiality to the potential response to indole compounds we previously reported, improved the stability of the rest potential and enabled the electrodes to respond to tryptophan in case of specimens with R a values ranging between ∼2 and ∼3 nm but not for those with R a of ∼1 nm. It was suggested that there are optimum values of effective work function of ITO for specific potential response to tryptophan, which can be obtained by the successive modification of ITO surface.

  4. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor.

    Science.gov (United States)

    Rashid, Jahwarhar Izuan Abdul; Yusof, Nor Azah; Abdullah, Jaafar; Hashim, Uda; Hajian, Reza

    2014-12-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0-178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4°C in silica gel. Copyright © 2014 Elsevier B.V. All rights reserved.

  5. Tailoring the Electrochemical Properties of Carbon Nanotube Modified Indium Tin Oxide via in Situ Grafting of Aryl Diazonium.

    Science.gov (United States)

    Hicks, Jacqueline M; Wong, Zhi Yi; Scurr, David J; Silman, Nigel; Jackson, Simon K; Mendes, Paula M; Aylott, Jonathan W; Rawson, Frankie J

    2017-05-23

    Our ability to tailor the electronic properties of surfaces by nanomodification is paramount for various applications, including development of sensing, fuel cell, and solar technologies. Moreover, in order to improve the rational design of conducting surfaces, an improved understanding of structure/function relationships of nanomodifications and effect they have on the underlying electronic properties is required. Herein, we report on the tuning and optimization of the electrochemical properties of indium tin oxide (ITO) functionalized with single-walled carbon nanotubes (SWCNTs). This was achieved by controlling in situ grafting of aryl amine diazonium films on the nanoscale which were used to covalently tether SWCNTs. The structure/function relationship of these nanomodifications on the electronic properties of ITO was elucidated via time-of-flight secondary ion mass spectrometry and electrochemical and physical characterization techniques which has led to new mechanistic insights into the in situ grafting of diazonium. We discovered that the connecting bond is a nitro group which is covalently linked to a carbon on the aryl amine. The increased understanding of the surface chemistry gained through these studies enabled us to fabricate surfaces with optimized electron transfer kinetics. The knowledge gained from these studies allows for the rational design and tuning of the electronic properties of ITO-based conducting surfaces important for development of various electronic applications.

  6. Excitation of epsilon-near-zero resonance in ultra-thin indium tin oxide shell embedded nanostructured optical fiber.

    Science.gov (United States)

    Minn, Khant; Anopchenko, Aleksei; Yang, Jingyi; Lee, Ho Wai Howard

    2018-02-05

    We report a novel optical waveguide design of a hollow step index fiber modified with a thin layer of indium tin oxide (ITO). We show an excitation of highly confined waveguide mode in the proposed fiber near the wavelength where permittivity of ITO approaches zero. Due to the high field confinement within thin ITO shell inside the fiber, the epsilon-near-zero (ENZ) mode can be characterized by a peak in modal loss of the hybrid waveguide. Our results show that such in-fiber excitation of ENZ mode is due to the coupling of the guided core mode to the thin-film ENZ mode. We also show that the phase matching wavelength, where the coupling takes place, varies depending on the refractive index of the constituents inside the central bore of the fiber. These ENZ nanostructured optical fibers have many potential applications, for example, in ENZ nonlinear and magneto-optics, as in-fiber wavelength-dependent filters, and as subwavelength fluid channel for optical and bio-photonic sensing.

  7. Functionalization of indium-tin-oxide electrodes by laser-nanostructured gold thin films for biosensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Grochowska, Katarzyna, E-mail: kgrochowska@imp.gda.pl [Centre for Plasma and Laser Engineering, The Szewalski Institute, Polish Academy of Sciences, 14 Fiszera St, 80-231 Gdańsk (Poland); Siuzdak, Katarzyna [Centre for Plasma and Laser Engineering, The Szewalski Institute, Polish Academy of Sciences, 14 Fiszera St, 80-231 Gdańsk (Poland); Karczewski, Jakub [Solid State Physics Department, Faculty of Applied Physics and Mathematics, Gdańsk University of Technology, 11/12 Narutowicza St, 80-233, Gdańsk (Poland); Śliwiński, Gerard [Centre for Plasma and Laser Engineering, The Szewalski Institute, Polish Academy of Sciences, 14 Fiszera St, 80-231 Gdańsk (Poland)

    2015-12-01

    Graphical abstract: - Highlights: • ITO electrodes modified by NP arrays prepared by laser dewetting of thin Au films. • Enhanced activity, linear response and high sensitivity towards glucose. • Promising biosensor material AuNP-modified ITO of improved performance. - Abstract: The production and properties of the indium-tin-oxide (ITO) electrodes functionalized by Au nanoparticle (NP) arrays of a relatively large area formed by pulsed laser nanostructuring of thin gold films are reported and discussed. The SEM inspection of modified electrodes reveals the presence of the nearly spherical and disc-shaped particles of dimensions in the range of 40–120 nm. The NP-array geometry can be controlled by selection of the laser processing conditions. It is shown that particle size and packing density of the array are important factors which determine the electrode performance. In the case of NP-modified electrodes the peak current corresponding to the glucose direct oxidation process shows rise with increasing glucose concentration markedly higher comparing to the reference Au disc electrode. The detection limit reaches 12 μM and linear response of the sensor is observed from 0.1 to 47 mM that covers the normal physiological range of the blood sugar detection.

  8. Simple and robust near-infrared spectroscopic monitoring of indium-tin-oxide (ITO) etching solution using Teflon tubing

    International Nuclear Information System (INIS)

    Nah, Sanghee; Ryu, Kyungtag; Cho, Soohwa; Chung, Hoeil; Namkung, Hankyu

    2006-01-01

    The ability to monitor etching solutions using a spectroscopy directly through existing Teflon lines in electronic industries is highly beneficial and offers many advantages. A monitoring method was developed using near-infrared (NIR) measurements with Teflon tubing as a sample container for the quantification of components in the indium-tin-oxide (ITO) etching solution composed of hydrochloric acid (HCl), acetic acid (CH 3 COOH) and water. Measurements were reproducible and it was possible to use the same calibration model for different Teflon tubings. Even though partial least squares (PLS) calibration performance was slightly degraded for Teflon cells when compared to quartz cells of the similar pathlength, the calibration data correlated well with reference data. The robustness of Teflon-based NIR measurement was evaluated by predicting the spectra of 10 independent samples that were collected using five different Teflon tubes. Although, two Teflon tubes were visually less transparent than the other three, there was no significant variation in the standard error of predictions (SEPs) among the five Teflon tubes. Calibration accuracy was successfully maintained and highly repeatable prediction results were achieved. This study verifies that a Teflon-based NIR measurement is reliable for the monitoring of etching solutions and it can be successfully integrated into on-line process monitoring

  9. Ultraviolet photoelectron spectroscopy investigation of interface formation in an indium-tin oxide/fluorocarbon/organic semiconductor contact

    International Nuclear Information System (INIS)

    Tong, S.W.; Lau, K.M.; Sun, H.Y.; Fung, M.K.; Lee, C.S.; Lifshitz, Y.; Lee, S.T.

    2006-01-01

    It has been demonstrated that hole-injection in organic light-emitting devices (OLEDs) can be enhanced by inserting a UV-illuminated fluorocarbon (CF x ) layer between indium-tin oxide (ITO) and organic hole-transporting layer (HTL). In this work, the process of interface formation and electronic properties of the ITO/CF x /HTL interface were investigated with ultraviolet photoelectron spectroscopy. It was found that UV-illuminated fluorocarbon layer decreases the hole-injection barrier from ITO to α-napthylphenylbiphenyl diamine (NPB). Energy level diagrams deduced from the ultraviolet photoelectron spectroscopy (UPS) spectra show that the hole-injection barrier in ITO/UV-treated CF x /NPB is the smallest (0.46 eV), compared to that in the ITO/untreated CF x /NPB (0.60 eV) and the standard ITO/NPB interface (0.68 eV). The improved current density-voltage (I-V) characteristics in the UV-treated CF x -coated ITO contact are consistent with its smallest barrier height

  10. Characteristics of Indium Tin Oxide (ITO Nanoparticles Recovered by Lift-off Method from TFT-LCD Panel Scraps

    Directory of Open Access Journals (Sweden)

    Dongchul Choi

    2014-11-01

    Full Text Available In this study, indium-tin-oxide (ITO nanoparticles were simply recovered from the thin film transistor-liquid crystal display (TFT-LCD panel scraps by means of lift-off method. This can be done by dissolving color filter (CF layer which is located between ITO layer and glass substrate. In this way the ITO layer was easily lifted off the glass substrate of the panel scrap without panel crushing. Over 90% of the ITO on the TFT-LCD panel was recovered by using this method. After separating, the ITO was obtained as particle form and their characteristics were investigated. The recovered product appeared as aggregates of particles less than 100 nm in size. The weight ratio of In/Sn is very close to 91/9. XRD analysis showed that the ITO nanoparticles have well crystallized structures with (222 preferred orientation even after recovery. The method described in this paper could be applied to the industrial recovery business for large size LCD scraps from TV easily without crushing the glass substrate.

  11. Structure, optical and electrical properties of indium tin oxide ultra thin films prepared by jet nebulizer spray pyrolysis technique

    Directory of Open Access Journals (Sweden)

    M. Thirumoorthi

    2016-03-01

    Full Text Available Indium tin oxide (ITO thin films have been prepared by jet nebulizer spray pyrolysis technique for different Sn concentrations on glass substrates. X-ray diffraction patterns reveal that all the films are polycrystalline of cubic structure with preferentially oriented along (222 plane. SEM images show that films exhibit uniform surface morphology with well-defined spherical particles. The EDX spectrum confirms the presence of In, Sn and O elements in prepared films. AFM result indicates that the surface roughness of the films is reduced as Sn doping. The optical transmittance of ITO thin films is improved from 77% to 87% in visible region and optical band gap is increased from 3.59 to 4.07 eV. Photoluminescence spectra show mainly three emissions peaks (UV, blue and green and a shift observed in UV emission peak. The presence of functional groups and chemical bonding was analyzed by FTIR. Hall effect measurements show prepared films having n-type conductivity with low resistivity (3.9 × 10−4 Ω-cm and high carrier concentrations (6.1 × 1020 cm−3.

  12. Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

    2009-07-01

    Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

  13. High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

    Science.gov (United States)

    Ahn, Min-Ju; Cho, Won-Ju

    2017-10-01

    In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

  14. Analysis of Indium Tin Oxide Film Using Argon Fluroide (ArF) Laser-Excited Atomic Fluorescence of Ablated Plumes.

    Science.gov (United States)

    Ho, Sut Kam; Garcia, Dario Machado

    2017-04-01

    A two-pulse laser-excited atomic fluorescence (LEAF) technique at 193 nm wavelength was applied to the analysis of indium tin oxide (ITO) layer on polyethylene terephthalate (PET) film. Fluorescence emissions from analytes were induced from plumes generated by first laser pulse. Using this approach, non-selective LEAF can be accomplished for simultaneous multi-element analysis and it overcomes the handicap of strict requirement for laser excitation wavelength. In this study, experimental conditions including laser fluences, times for gating and time delay between pulses were optimized to reveal high sensitivity with minimal sample destruction and penetration. With weak laser fluences of 100 and 125 mJ/cm 2 for 355 and 193 nm pulses, detection limits were estimated to be 0.10% and 0.43% for Sn and In, respectively. In addition, the relation between fluorescence emissions and number of laser shots was investigated; reproducible results were obtained for Sn and In. It shows the feasibility of depth profiling by this technique. Morphologies of samples were characterized at various laser fluences and number of shots to examine the accurate penetration. Images of craters were also investigated using scanning electron microscopy (SEM). The results demonstrate the imperceptible destructiveness of film after laser shot. With such weak laser fluences and minimal destructiveness, this LEAF technique is suitable for thin-film analysis.

  15. Quantification and impact of nonparabolicity of the conduction band of indium tin oxide on its plasmonic properties

    International Nuclear Information System (INIS)

    Liu, Xiaoge; Park, Junghyun; Kang, Ju-Hyung; Yuan, Hongtao; Cui, Yi; Hwang, Harold Y.; Brongersma, Mark L.

    2014-01-01

    Doped indium tin oxide (ITO) behaves as a Drude metal with a plasma frequency that is controlled by its free carrier density. In this work, we systematically tune this frequency across the mid-infrared range by annealing treatments in a reducing environment that produce high electron concentrations (∼10 21  cm −3 ). The changes in ITO's optical properties that result from the changes in carrier density are measured by attenuated total reflection measurements. These optical frequency measurements are complemented by Hall measurements to obtain a comprehensive picture of the Drude response of the ITO films. It was found that a complete description of the optical properties at very high carrier densities needs to account for the nonparabolicity of the conduction band of ITO and a reduced carrier mobility. More specifically, an increase in carrier concentration from 6.2 × 10 19  cm −3 to 1.4 × 10 21  cm −3 comes with a change of the effective electron mass from 0.35 m 0 to 0.53 m 0 and a decrease in the optical frequency mobility from about 20 cm 2  V −1  s −1 to 9 cm 2  V −1  s −1

  16. Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Po-Hsun [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Chang, Kuan-Chang, E-mail: kcchang@pkusz.edu.cn [Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); School of Electronic and Computer Engineering, Peking University, Shenzhen 518055 (China); Tsai, Tsung-Ming; Pan, Chih-Hung; Shih, Chih-Cheng; Wu, Cheng-Hsien; Yang, Chih-Cheng; Chen, Wen-Chung; Lin, Jiun-Chiu; Wang, Ming-Hui [Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Zheng, Hao-Xuan; Chen, Min-Chen [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan, ROC (China); Sze, Simon M. [Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, ROC (China)

    2017-08-31

    In this paper, we implement a post-oxidation method to modify surface characteristics of indium tin oxide (ITO) films by using an O{sub 2} inductively coupled plasma (ICP) treatment. Based on field emission-scanning electron microscope (FE-SEM) and atomic force microscope (AFM) analysis, we found that the surface morphologies of the ITO films become slightly flatter after the O{sub 2} plasma treatment. The optical characteristics and X-ray diffraction (XRD) experiments of either pure ITO or O{sub 2} plasma treated ITO films were also verified. Even though the XRD results showed no difference from bulk crystallizations, the oxygen concentrations increased at the film surface after O{sub 2} plasma treatment, according to the XPS inspection results. Moreover, this study investigated the effects of two different plasma treatment times on oxygen concentration in the ITO films. The surface sheet resistance of the plasma treated ITO films became nearly non-conductive when measured with a 4-point probe. Finally, we applied the O{sub 2} plasma treated ITO films as the insulator in resistive random access memory (RRAM) to examine their potential for use in resistive switching storage applications. Stable resistance switching characteristics were obtained by applying the O{sub 2} plasma treatment to the ITO-based RRAM. We also confirmed the relationship between plasma treatment time and RRAM performance. These material analyses and electrical measurements suggest possible advantages in using this plasma treatment technique in device fabrication processes for RRAM applications.

  17. FeNi3/indium tin oxide (ITO) composite nanoparticles with excellent microwave absorption performance and low infrared emissivity

    International Nuclear Information System (INIS)

    Fu, Li-Shun; Jiang, Jian-Tang; Zhen, Liang; Shao, Wen-Zhu

    2013-01-01

    Highlights: ► Electrical conductivity and infrared emissivity can be controlled by ITO content. ► The infrared emissivity is the lowest when the mole ratio of In:Sn in sol is 9:1. ► The permittivity in microwave band can be controlled by the electrical conductivity. ► EMA performance is significantly influenced by the content of ITO phase. ► FeNi 3 /ITO composite particles are suitable for both infrared and radar camouflage. - Abstract: FeNi 3 /indium tin oxide (ITO) composite nanoparticles were synthesized by a self-catalyzed reduction method and a sol–gel process. The dependence of the content of ITO phase with the mole ratios of In:Sn of different sols was investigated. The relation between the electrical conductivity, infrared emissivity of FeNi 3 /ITO composite nanoparticles and the content of ITO phase was discussed. Electromagnetic wave absorption (EMA) performance of products was evaluated by using transmission line theory. It was found that EMA performance including the intensity and the location of effective band is significantly dependent on the content of ITO phase. The low infrared emissivity and superior EMA performance of FeNi 3 /ITO composite nanoparticles can be both achieved when the mole ratio of In:Sn in sol is 9:1.

  18. FeNi{sub 3}/indium tin oxide (ITO) composite nanoparticles with excellent microwave absorption performance and low infrared emissivity

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Li-Shun; Jiang, Jian-Tang [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, Liang, E-mail: lzhen@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); MOE Key Laboratory of Micro-systems and Micro-structures Manufacturing, Harbin Institute of Technology, Harbin 150080 (China); Shao, Wen-Zhu [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2013-03-01

    Highlights: Black-Right-Pointing-Pointer Electrical conductivity and infrared emissivity can be controlled by ITO content. Black-Right-Pointing-Pointer The infrared emissivity is the lowest when the mole ratio of In:Sn in sol is 9:1. Black-Right-Pointing-Pointer The permittivity in microwave band can be controlled by the electrical conductivity. Black-Right-Pointing-Pointer EMA performance is significantly influenced by the content of ITO phase. Black-Right-Pointing-Pointer FeNi{sub 3}/ITO composite particles are suitable for both infrared and radar camouflage. - Abstract: FeNi{sub 3}/indium tin oxide (ITO) composite nanoparticles were synthesized by a self-catalyzed reduction method and a sol-gel process. The dependence of the content of ITO phase with the mole ratios of In:Sn of different sols was investigated. The relation between the electrical conductivity, infrared emissivity of FeNi{sub 3}/ITO composite nanoparticles and the content of ITO phase was discussed. Electromagnetic wave absorption (EMA) performance of products was evaluated by using transmission line theory. It was found that EMA performance including the intensity and the location of effective band is significantly dependent on the content of ITO phase. The low infrared emissivity and superior EMA performance of FeNi{sub 3}/ITO composite nanoparticles can be both achieved when the mole ratio of In:Sn in sol is 9:1.

  19. Robust infrared-shielding coating films prepared using perhydropolysilazane and hydrophobized indium tin oxide nanoparticles with tuned surface plasmon resonance.

    Science.gov (United States)

    Katagiri, Kiyofumi; Takabatake, Ryuichi; Inumaru, Kei

    2013-10-23

    Robust infrared (IR)-shielding coating films were prepared by dispersing indium tin oxide (ITO) nanoparticles (NPs) in a silica matrix. Hydrophobized ITO NPs were synthesized via a liquid phase process. The surface plasmon resonance (SPR) absorption of the ITO NPs could be tuned by varying the concentration of Sn doping from 3 to 30 mol %. The shortest SPR wavelength and strongest SPR absorption were obtained for the ITO NPs doped with 10% Sn because they possessed the highest electron carrier density. Coating films composed of a continuous silica matrix homogeneously dispersed with ITO NPs were obtained using perhydropolysilazane (PHPS) as a precursor. PHPS was completely converted to silica by exposure to the vapor from aqueous ammonia at 50 °C. The prepared coating films can efficiently shield IR radiation even though they are more than 80% transparent in the visible range. The coating film with the greatest IR-shielding ability completely blocked IR light at wavelengths longer than 1400 nm. The pencil hardness of this coating film was 9H at a load of 750 g, which is sufficiently robust for applications such as automotive glass.

  20. Coating material innovation in conjunction with optimized deposition technologies

    International Nuclear Information System (INIS)

    Stolze, M.; Leitner, K.

    2009-01-01

    Concentrating on physical vapour deposition methods several examples of recently developed coating materials for optical applications were studied for film deposition with optimized coating technologies: mixed evaporation materials for ion assisted deposition with modern plasma ion sources, planar metal and oxide sputter targets for Direct Current (DC) and Mid-Frequency (MF) pulsed sputter deposition and planar and rotatable sputter targets of transparent conductive oxides (TCO) for large-area sputter deposition. Films from specially designed titania based mixed evaporation materials deposited with new plasma ion sources and possible operation with pure oxygen showed extended ranges of the ratio between refractive index and structural film stress, hence there is an increased potential for the reduction of the total coating stress in High-Low alternating stacks and for coating plastics. DC and MF-pulsed sputtering of niobium metal and suboxide targets for optical coatings yielded essential benefits of the suboxide targets in a range of practical coating conditions (for absent in-situ post-oxidation ability): higher refractive index and deposition rate, better reproducibility and easier process control, and the potential for co-deposition of several targets. Technological progress in the manufacture of rotatable indium tin oxide (ITO) targets with regard to higher wall-thickness and density was shown to be reflected in higher material stock and coater up-time, economical deposition rates and stable process behaviour. Both for the rotatable ITO targets and higher-dense aluminum-doped zinc oxide (AZO) planar targets values of film transmittance and resistivity were in the range of the best values industrially achieved for films from the respective planar targets. The results for the rotatable ITO and planar AZO targets point to equally optimized process and film properties for the optimized rotatable AZO targets currently in testing

  1. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire, LE11 3TU (United Kingdom)

    2015-05-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films.

  2. The structural properties of CdS deposited by chemical bath deposition and pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bass, K.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium sulphide (CdS) thin films were deposited by two different processes, chemical bath deposition (CBD), and pulsed DC magnetron sputtering (PDCMS) on fluorine doped-tin oxide coated glass to assess the potential advantages of the pulsed DC magnetron sputtering process. The structural, optical and morphological properties of films obtained by CBD and PDCMS were investigated using X-ray photoelectron spectroscopy, X-ray diffraction, scanning and transmission electron microscopy, spectroscopic ellipsometry and UV-Vis spectrophotometry. The as-grown films were studied and comparisons were drawn between their morphology, uniformity, crystallinity, and the deposition rate of the process. The highest crystallinity is observed for sputtered CdS thin films. The absorption in the visible wavelength increased for PDCMS CdS thin films, due to the higher density of the films. The band gap measured for the as-grown CBD-CdS is 2.38 eV compared to 2.34 eV for PDCMS-CdS, confirming the higher density of the sputtered thin film. The higher deposition rate for PDCMS is a significant advantage of this technique which has potential use for high rate and low cost manufacturing. - Highlights: • Pulsed DC magnetron sputtering (PDCMS) of CdS films • Chemical bath deposition of CdS films • Comparison between CdS thin films deposited by chemical bath and PDCMS techniques • High deposition rate deposition for PDCMS deposition • Uniform, pinhole free CdS thin films

  3. Shape memory effect and microstructures of sputter-deposited Cu-Al-Ni films

    International Nuclear Information System (INIS)

    Minemura, T.; Andoh, H.; Kita, Y.; Ikuta, I.

    1985-01-01

    The shape memory effect has been found in many alloy systems which exhibit a thermoelastic martensite transformation. Cu-Al-Ni alloys exhibit an excellent shape memory effect in single crystalline states, but they have not yet been commercially used due to their brittle fracture along the grain boundaries in polycrystalline states. This letter reports the shape memory effect and microstructures of the sputter-deposited Cu-Al-Ni films. Cu-14%Al-4%Ni alloy ingot was prepared. A target for sputter deposition was cut from the ingot. Aluminium foils (20 μm thick) were used for the substrates of sputter deposition. The microstructures and crystal structures of the films were investigated by transmission electron microscopy (TEM) and X-ray diffraction using CuKα radiation, respectively. The effect of the sputtering conditions such as substrate temperature, partial pressure of argon gas, and the sputtering power on the structures of sputter-deposited Cu-14%Al-4%Ni films were investigated by X-ray diffraction. Results are shown and discussed. Photographs demonstrate shape memory behaviour of Cu-14%Al-4%Ni films sputter-deposited on aluminium foils from (a) liquid nitrogen temperature to (d) room temperature. (author)

  4. Pengaruh Tekanan Parsial Oksigen Terhadap Koefisien Absorpsi Lapisan Tipis Indium Tin Oxide (ITO

    Directory of Open Access Journals (Sweden)

    Muslimin Muslimin

    2014-01-01

    Full Text Available DOWNLOAD PDFProses  absorpsi  foton  dengan  energi  tertentu  akan  mengeksitasi  elektron  darikeadaan energi yang lebih rendah ke keadaan energi yang lebih tinggi. Untuk menentukankoefisien  ini  secara  eksperimen  terutama  karena  adanya  pengaruh  interferensi  optis  daripola-pola  transmitansi  dan  reflektansi.  Tujuan  penelitian  ini  adalah  untuk  menentukanbesarnya absorpsi lapisan tipis In2O3: SnO2dengan berbagai kadar oksigen yang diberikanpada saat deposisi. Proses pelapisan dilakukan 90% berat In2O3 dan 10% berat SnO2padasubstrat kaca dengan cara sputtering. Pada saat sputtering dilakukan penambahan oksigentertentu  yaitu  2,50%,  3,70%,  5,10%,  6,15%  dan  8,90%  yang  dilakukan  deposisi  padatemperature 1750C. Hasil analisis teramati adanya pergeseran interferensi dan transmitansike arah panjang gelombang yang lebih pendek sebanding dengan kenaikan kadar oksigen.Pada  kadar  oksigen  2,50%  dan  3,70%  koefisien  absorbsi  makin  naik,  tetapi  pada  kadaroksigen  5,10%,  6,15%  dan   8,90%  koefisien  absorpsi  mulai  menurun.  Perlakuan  kadaroksigen  pada  saat  deposisi  lapisan  tipis  ITO  dapat  mempengaruhi  koefisien  absorpsilapisan tipis yang terbentuk.Kata kunci : Kadar oksigen, koefisien absorpsi

  5. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  6. Deposition rates of high power impulse magnetron sputtering: Physics and economics

    International Nuclear Information System (INIS)

    Anders, Andre

    2010-01-01

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

  7. Composition changes in sputter deposition of Y-Ba-Cu-O films

    International Nuclear Information System (INIS)

    Hoshi, Y.; Naoe, M.

    1989-01-01

    The authors discuss the mechanism of the composition change in sputter deposition of Y-BA-Cu-O film from YBa 2 Cu 3 O 7-chi target investigated by means of a rf planar magnetron sputtering apparatus. Film composition changes significantly with not only substrate temperature Ts and sputtering gas pressure, but also substrate position. Lack of Cu and Ba content is significant in the film deposited at the substrate position just above the erosion area of the sputtering target. Suppression of bombardment of the substrate surface by negative ions emitted from the target and substrate is effective in increasing Cu and Ba content in the film. These results indicate not only that the sticking probability of the sputtered particles changes with Ts and incident particle energy, but also that high energy particle bombardment of the substrate surface plays an important role in the change of the film composition

  8. Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

    2013-01-01

    We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

  9. Study on the electrical properties of ITO films deposited by facing target sputter deposition

    International Nuclear Information System (INIS)

    Kim, Youn J; Jin, Su B; Kim, Sung I; Choi, Yoon S; Choi, In S; Han, Jeon G

    2009-01-01

    This study examined the mechanism for the change in the electrical properties (carrier concentration (n) and mobility (μ)) of tin-doped indium oxide (ITO) films deposited by magnetron sputtering in a confined facing magnetic field. The relationship between the carrier concentration and the mobility was significantly different from the results reported for ITO films deposited by other magnetron sputtering processes. The lowest resistivity obtained for ITO films deposited in a confined facing magnetic field at low substrate temperatures (approximately 120 0 C) was 4.26 x 10 -4 Ω cm at a power density of 3 W cm -2 . Crystalline ITO films were obtained at a low power density range from 3 to 5 W cm -2 due to the increase in the substrate temperature from 120 to 162 0 C. This contributed to the increased carrier concentration and decreased electrical resistivity. X-ray photoelectron spectroscopy revealed an increase in the concentration of the Sn 4+ states. This was attributed to the formation of a crystalline ITO film, which effectively enhanced the carrier concentration and reduced the carrier mobility.

  10. Effect of deposition conditions on mechanical stresses and microstructure of sputter-deposited molybdenum and reactively sputter-deposited molybdenum nitride films

    International Nuclear Information System (INIS)

    Shen, Y.G.

    2003-01-01

    A combined investigation of mechanical stress generation by in situ substrate curvature measurements during the growth of MoN x thin films, with 0≤x≤0.35, and of structural properties by ex situ X-ray diffraction (XRD), transmission electron microscopy (TEM), transmission electron diffraction (TED), X-ray photoelectron spectroscopy (XPS), and electron energy-loss spectroscopy (EELS) is reported. It was found that the Mo film stresses strongly depended on the Ar sputtering pressure and changed from highly compressive to highly tensile in a relatively narrow pressure range of 6-12 mTorr. For pressures exceeding ∼40 mTorr, the stress in the film was nearly zero. Cross-sectional TEM measurements indicated that the compressively stressed films contained a dense microstructure without any columns, while the films having tensile stress had a very columnar microstructure. High sputtering-gas pressure conditions yielded dendritic-like film growth, resulting in complete relaxation of the mechanical tensile stresses. It was also found that the properties of the deposited MoN x films depended not only on the nitrogen partial pressure in Ar-N 2 gas mixtures but also on the total sputtering-gas pressure. Cross-sectional TEM studies showed that an average column width for 160 nm-thick films near stoichiometry of Mo 2 N was about ∼15-20 nm. Using the electron scattering data collected from a range of crystalline samples for calculating the pair distribution function (PDF) by Fourier transformation in real space, Mo-N and Mo-Mo bonding in the films was also identified. Once the Mo 2 N phase was formed, the density, microstructure and bonding feature were similar and insensitive to the total sputtering pressure used in this study

  11. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Jahwarhar Izuan Abdul [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry and Biology, Centre for Defense Foundation Studies, National Defense University of Malaysia, Sungai Besi Camp, 57000 Kuala Lumpur (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Yusof, Nor Azah, E-mail: azahy@upm.edu.my [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Abdullah, Jaafar [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Hashim, Uda [Institute of Nanoelectronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Hajian, Reza, E-mail: rezahajian@upm.edu.my [Institute of Advanced Technology, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2014-12-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0–178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4 °C in silica gel. - Highlights: • A sensitive biosensor is presented for detection of dengue virus. • SiNWs and AuNPs used as nanocomposite layers on ITO for construction of biosensor • The detection mechanism is based on the interaction of MB with DNA bonded on AuNPs. • The reduction signal of MB decreases upon complementary hybridization.

  12. Electro-Mechanical Coupling of Indium Tin Oxide Coated Polyethylene Terephthalate ITO/PET for Flexible Solar Cells

    KAUST Repository

    Saleh, Mohamed A.

    2013-05-15

    Indium tin oxide (ITO) is the most widely used transparent electrode in flexible solar cells because of its high transparency and conductivity. But still, cracking of ITO on PET substrates due to tensile loading is not fully understood and it affects the functionality of the solar cell tremendously as ITO loses its conductivity. Here, we investigate the cracking evolution in ITO/PET exposed to two categories of tests. Monotonous tensile testing is done in order to trace the crack propagation in ITO coating as well as determining a loading range to focus on during our study. Five cycles test is also conducted to check the crack closure effect on the resistance variation of ITO. Analytical model for the damage in ITO layer is implemented using the homogenization concept as in laminated composites for transverse cracking. The homogenization technique is done twice on COMSOL to determine the mechanical and electrical degradation of ITO due to applied loading. Finally, this damage evolution is used for a simulation to predict the degradation of ITO as function in the applied load and correlate this degradation with the resistance variation. Experimental results showed that during unloading, crack closure results in recovery of conductivity and decrease in the overall resistance of the cracked ITO. Also, statistics about the crack spacing showed that the cracking pattern is not perfectly periodical however it has a positively skewed distribution. The higher the applied load, the less the discrepancy in the crack spacing data. It was found that the cracking mechanism of ITO starts with transverse cracking with local delamination at the crack tip unlike the mechanism proposed in the literature of having only cracking pattern without any local delamination. This is the actual mechanism that leads to the high increase in ITO resistance. The analytical code simulates the damage evolution in the ITO layer as function in the applied strain. This will be extended further to

  13. Surface preparation effects on efficient indium-tin-oxide-CdTe and CdS-CdTe heterojunction solar cells

    Science.gov (United States)

    Werthen, J. G.; Fahrenbruch, A. L.; Bube, R. H.; Zesch, J. C.

    1983-05-01

    The effects of CdTe surface preparation and subsequent junction formation have been investigated through characterization of ITO/CdTe and CdS/CdTe heterojunction solar cells formed by electron beam evaporation of indium-tin-oxide (ITO) and CdS onto single crystal p-type CdTe. Surfaces investigated include air-cleaved (110) surfaces, bromine-in-methanol etched (110) and (111) surfaces, and teh latter surfaces subjected to a hydrogen heat treatment. Both air-cleaved and hydrogen heat treated surfaces have a stoichiometric Cd to Te ratio. The ITO/CdTe junction formation process involves an air heat treatment, which ahs serious effects on the behavior of junctions formed on these surfaces. Etched surfaces which have a large excesss of Te, are less affected by the junction formation process and result in ITO/CdTe heterojunctions with solar efficiencies of 9% (Vsc =20 mA/cm2). Use of low-doped CdTe results in junctions characterized by considerably larger open-circuit votages (Voc =0.81 V) which are attributable to increasing diode factors caused by a shift from interfacial recombination to recombination in the depletion region. Resulting solar efficiencies reach 10.5% which is the highest value reported to date for a genuine CdTe heterojunction, CdS/CdTe heterojunctions show a strong dependence on CdTe surface condition, but less influence on the junction formation process. Solar efficiencies of 7.5% on an etched and heat treated surface are observed. All of these ITO/CdTe and CdS/CdTe heterojunctions have been stable for at least 10 months.

  14. Polarization-Insensitive Surface Plasmon Polarization Electro-Absorption Modulator Based on Epsilon-Near-Zero Indium Tin Oxide

    Science.gov (United States)

    Jin, Lin; Wen, Long; Liang, Li; Chen, Qin; Sun, Yunfei

    2018-02-01

    CMOS-compatible plasmonic modulators operating at the telecom wavelength are significant for a variety of on-chip applications. Relying on the manipulation of the transverse magnetic (TM) mode excited on the metal-dielectric interface, most of the previous demonstrations are designed to response only for specific polarization state. In this case, it will lead to a high polarization dependent loss, when the polarization-sensitive modulator integrates to a fiber with random polarization state. Herein, we propose a plasmonic modulator utilizing a metal-oxide indium tin oxide (ITO) wrapped around the silicon waveguide and investigate its optical modulation ability for both the vertical and horizontal polarized guiding light by tuning electro-absorption of ITO with the field-induced carrier injection. The electrically biased modulator with electron accumulated at the ITO/oxide interface allows for epsilon-near-zero (ENZ) mode to be excited at the top or lateral portion of the interface depending on the polarization state of the guiding light. Because of the high localized feature of ENZ mode, efficient electro-absorption can be achieved under the "OFF" state of the device, thus leading to large extinction ratio (ER) for both polarizations in our proposed modulator. Further, the polarization-insensitive modulation is realized by properly tailoring the thickness of oxide in two different stacking directions and therefore matching the ER values for device operating at vertical and horizontal polarized modes. For the optimized geometry configuration, the difference between the ER values of two polarization modes, i.e., the ΔER, as small as 0.01 dB/μm is demonstrated and, simultaneously with coupling efficiency above 74%, is obtained for both polarizations at a wavelength of 1.55 μm. The proposed plasmonic-combined modulator has a potential application in guiding and processing of light from a fiber with a random polarization state.

  15. Gold-modified indium tin oxide as a transparent window in optoelectronic diagnostics of electrochemically active biofilms.

    Science.gov (United States)

    Schmidt, Igor; Gad, Alaaeldin; Scholz, Gregor; Boht, Heidi; Martens, Michael; Schilling, Meinhard; Suryo Wasisto, Hutomo; Waag, Andreas; Schröder, Uwe

    2017-08-15

    Microbial electrochemical technologies (METs) are one of the emerging green bioenergy domains that are utilizing microorganisms for wastewater treatment or electrosynthesis. Real-time monitoring of bioprocess during operation is a prerequisite for understanding and further improving bioenergy harvesting. Optical methods are powerful tools for this, but require transparent, highly conductive and biocompatible electrodes. Whereas indium tin oxide (ITO) is a well-known transparent conductive oxide, it is a non-ideal platform for biofilm growth. Here, a straightforward approach of surface modification of ITO anodes with gold (Au) is demonstrated, to enhance direct microbial biofilm cultivation on their surface and to improve the produced current densities. The trade-off between the electrode transmittance (critical for the underlying integrated sensors) and the enhanced growth of biofilms (crucial for direct monitoring) is studied. Au-modified ITO electrodes show a faster and reproducible biofilm growth with three times higher maximum current densities and about 6.9 times thicker biofilms compared to their unmodified ITO counterparts. The electrochemical analysis confirms the enhanced performance and the reversibility of the ITO/Au electrodes. The catalytic effect of Au on the ITO surface seems to be the key factor of the observed performance improvement since the changes in the electrode conductivity and their surface wettability are relatively small and in the range of ITO. An integrated platform for the ITO/Au transparent electrode with light-emitting diodes was fabricated and its feasibility for optical biofilm thickness monitoring is demonstrated. Such transparent electrodes with embedded catalytic metals can serve as multifunctional windows for biofilm diagnostic microchips. Copyright © 2017 Elsevier B.V. All rights reserved.

  16. Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jaeman; Kim, Dae Geun; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan, E-mail: byungdu.ahn@samsung.com, E-mail: drlife@kookmin.ac.kr [School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Lim, Jun-Hyung; Lee, Je-Hun; Ahn, Byung Du, E-mail: byungdu.ahn@samsung.com, E-mail: drlife@kookmin.ac.kr [Samsung Display Co., Ltd., Yongin, Gyeonggi-Do 446-711 (Korea, Republic of); Kim, Yong-Sung [Korea Research Institute of Standards and Science, Yuseong, Daejeon 305-340 (Korea, Republic of)

    2014-10-13

    The quantitative analysis of mechanism on negative bias illumination stress (NBIS)-induced instability of amorphous indium-tin-zinc-oxide thin-film transistor (TFT) was suggested along with the effect of equivalent oxide thickness (EOT) of gate insulator. The analysis was implemented through combining the experimentally extracted density of subgap states and the device simulation. During NBIS, it was observed that the thicker EOT causes increase in both the shift of threshold voltage and the variation of subthreshold swing as well as the hump-like feature in a transfer curve. We found that the EOT-dependence of NBIS instability can be clearly explicated with the donor creation model, in which a larger amount of valence band tail states is transformed into either the ionized oxygen vacancy V{sub O}{sup 2+} or peroxide O{sub 2}{sup 2−} with the increase of EOT. It was also found that the V{sub O}{sup 2+}-related extrinsic factor accounts for 80%–92% of the total donor creation taking place in the valence band tail states while the rest is taken by the O{sub 2}{sup 2–} related intrinsic factor. The ratio of extrinsic factor compared to the total donor creation also increased with the increase of EOT, which could be explained by more prominent oxygen deficiency. The key founding of our work certainly represents that the established model should be considered very effective for analyzing the instability of the post-indium-gallium-zinc-oxide (IGZO) ZnO-based compound semiconductor TFTs with the mobility, which is much higher than those of a-IGZO TFTs.

  17. Sintered indium-tin oxide particles induce pro-inflammatory responses in vitro, in part through inflammasome activation.

    Directory of Open Access Journals (Sweden)

    Melissa A Badding

    Full Text Available Indium-tin oxide (ITO is used to make transparent conductive coatings for touch-screen and liquid crystal display electronics. As the demand for consumer electronics continues to increase, so does the concern for occupational exposures to particles containing these potentially toxic metal oxides. Indium-containing particles have been shown to be cytotoxic in cultured cells and pro-inflammatory in pulmonary animal models. In humans, pulmonary alveolar proteinosis and fibrotic interstitial lung disease have been observed in ITO facility workers. However, which ITO production materials may be the most toxic to workers and how they initiate pulmonary inflammation remain poorly understood. Here we examined four different particle samples collected from an ITO production facility for their ability to induce pro-inflammatory responses in vitro. Tin oxide, sintered ITO (SITO, and ventilation dust particles activated nuclear factor kappa B (NFκB within 3 h of treatment. However, only SITO induced robust cytokine production (IL-1β, IL-6, TNFα, and IL-8 within 24 h in both RAW 264.7 mouse macrophages and BEAS-2B human bronchial epithelial cells. Our lab and others have previously demonstrated SITO-induced cytotoxicity as well. These findings suggest that SITO particles activate the NLRP3 inflammasome, which has been implicated in several immune-mediated diseases via its ability to induce IL-1β release and cause subsequent cell death. Inflammasome activation by SITO was confirmed, but it required the presence of endotoxin. Further, a phagocytosis assay revealed that pre-uptake of SITO or ventilation dust impaired proper macrophage phagocytosis of E. coli. Our results suggest that adverse inflammatory responses to SITO particles by both macrophage and epithelial cells may initiate and propagate indium lung disease. These findings will provide a better understanding of the molecular mechanisms behind an emerging occupational health issue.

  18. The utilization of SiNWs/AuNPs-modified indium tin oxide (ITO) in fabrication of electrochemical DNA sensor

    International Nuclear Information System (INIS)

    Rashid, Jahwarhar Izuan Abdul; Yusof, Nor Azah; Abdullah, Jaafar; Hashim, Uda; Hajian, Reza

    2014-01-01

    This work describes the incorporation of SiNWs/AuNPs composite as a sensing material for DNA detection on indium tin-oxide (ITO) coated glass slide. The morphology of SiNWs/AuNPs composite as the modifier layer on ITO was studied by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The morphological studies clearly showed that SiNWs were successfully decorated with 20 nm-AuNPs using self-assembly monolayer (SAM) technique. The effective surface area for SiNWs/AuNPs-modified ITO enhanced about 10 times compared with bare ITO electrode. SiNWs/AuNPs nanocomposite was further explored as a matrix for DNA probe immobilization in detection of dengue virus as a bio-sensing model to evaluate its performance in electrochemical sensors. The hybridization of complementary DNA was monitored by differential pulse voltammetry (DPV) using methylene blue (MB) as the redox indicator. The fabricated biosensor was able to discriminate significantly complementary, non-complementary and single-base mismatch oligonucleotides. The electrochemical biosensor was sensitive to target DNA related to dengue virus in the range of 9.0–178.0 ng/ml with detection limit of 3.5 ng/ml. In addition, SiNWs/AuNPs-modified ITO, regenerated up to 8 times and its stability was up to 10 weeks at 4 °C in silica gel. - Highlights: • A sensitive biosensor is presented for detection of dengue virus. • SiNWs and AuNPs used as nanocomposite layers on ITO for construction of biosensor • The detection mechanism is based on the interaction of MB with DNA bonded on AuNPs. • The reduction signal of MB decreases upon complementary hybridization

  19. Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices.

    Science.gov (United States)

    Ke, Shanming; Chen, Chang; Fu, Nianqing; Zhou, Hua; Ye, Mao; Lin, Peng; Yuan, Wenxiang; Zeng, Xierong; Chen, Lang; Huang, Haitao

    2016-10-26

    Sn-doped In 2 O 3 (ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 °C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (solar cells (PSCs) with high efficiency.

  20. Monitoring of morphology and physical properties of cultured cells using a micro camera and a quartz crystal with transparent indium tin oxide electrodes after injections of glutaraldehyde and trypsin

    International Nuclear Information System (INIS)

    Kang, Hyen-Wook; Ida, Kazumi; Yamamoto, Yuji; Muramatsu, Hiroshi

    2008-01-01

    For investigating the effects of chemical stimulation to cultured cells, we have developed a quartz crystal sensor system with a micro charge-coupled device (CCD) camera that enables microphotograph imaging simultaneously with quartz crystal measurement. Human hepatoma cell line (HepG2) cells were cultured on the quartz crystal through a collagen film. The electrode of the quartz crystal was made of indium tin oxide (ITO) transparent electrodes that enable to obtain a transparent mode photograph. Glutaraldehyde and trypsin were injected to the chamber of the cells, respectively. The response of the quartz crystal was monitored and microphotographs were recorded, and the resonance frequency and resonance resistance were analyzed with an F-R diagram that plotted the resonance frequency and resonance resistance. In the case of the glutaraldehyde injection, the cells responded in two steps that included the fast response of the cross-linking reaction and the successive internal change in the cells. In the case of the trypsin injection, the responses included two processes. In the first step, cell adhesion factors were cleaved and the cell structure became round, and in the next step, the cells were deposited on the quartz crystal surface and the surface of the cells was directly in contact with the quartz crystal surface

  1. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    International Nuclear Information System (INIS)

    Chen, Dazheng; Zhang, Chunfu; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-01-01

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C 61 butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  2. Practical and highly sensitive elemental analysis for aqueous samples containing metal impurities employing electrodeposition on indium-tin oxide film samples and laser-induced shock wave plasma in low-pressure helium gas.

    Science.gov (United States)

    Kurniawan, Koo Hendrik; Pardede, Marincan; Hedwig, Rinda; Abdulmadjid, Syahrun Nur; Lahna, Kurnia; Idris, Nasrullah; Jobiliong, Eric; Suyanto, Hery; Suliyanti, Maria Margaretha; Tjia, May On; Lie, Tjung Jie; Lie, Zener Sukra; Kurniawan, Davy Putra; Kagawa, Kiichiro

    2015-09-01

    We have conducted an experimental study exploring the possible application of laser-induced breakdown spectroscopy (LIBS) for practical and highly sensitive detection of metal impurities in water. The spectrochemical measurements were carried out by means of a 355 nm Nd-YAG laser within N2 and He gas at atmospheric pressures as high as 2 kPa. The aqueous samples were prepared as thin films deposited on indium-tin oxide (ITO) glass by an electrolysis process. The resulting emission spectra suggest that concentrations at parts per billion levels may be achieved for a variety of metal impurities, and it is hence potentially feasible for rapid inspection of water quality in the semiconductor and pharmaceutical industries, as well as for cooling water inspection for possible leakage of radioactivity in nuclear power plants. In view of its relative simplicity, this LIBS equipment offers a practical and less costly alternative to the standard use of inductively coupled plasma-mass spectrometry (ICP-MS) for water samples, and its further potential for in situ and mobile applications.

  3. Sputtering ultra-small Pt on nanographitic flakes deposited by electrophoresis for ethanol electro oxidation

    Science.gov (United States)

    Daryakenari, Ahmad Ahmadi; Daryakenari, Mohammad Ahmadi; Omidvar, Hamid

    2018-01-01

    To acquire highly efficient and cost-effective fuel cells, numerous research works have been carried out to the development low cost and excellent performance of electrocatalysts. In this paper, a solution-based electrophoretic deposition (EPD) technique for fabrication of Pt-based catalyst layers is studied. Nanographitic flake coatings used as catalyst support for sputtered platinium (Pt) were fabricated via the electrophoretic deposition (EPD) of dispersed nanographitic flakes in isopropyl alcohol. Magnesium nitrate hexahydrate (MNH) was used as an additive binder in the EPD process. Subsequently, the platinium particles were deposited by a direct sputtering on the fabricated nanographitic flake coatings.

  4. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J.P.; Hakam, A.; Ennaoui, A

    2002-11-30

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrol onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM)

  5. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    International Nuclear Information System (INIS)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J.P.; Hakam, A.; Ennaoui, A.

    2002-01-01

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrolysis onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM)

  6. Spectroscopic ellipsometry studies of index profile of indium tin oxide films prepared by spray pyrolysis

    Science.gov (United States)

    El Rhaleb, H.; Benamar, E.; Rami, M.; Roger, J. P.; Hakam, A.; Ennaoui, A.

    2002-11-01

    Spectroscopic ellipsometry (SE) has proven to be a very powerful diagnostic for thin film characterisation. It was used to determine thin film parameters such as film thickness and optical functions of polycrystalline tin-doped indium oxide (ITO) films deposited by spray pyrolysis onto Pyrex substrates. Dielectric ITO films often present microstructures which give rise to a variation of the refractive index with the distance from substrate. In this work, it was found that the fit between ellipsometric data and optical models results could be significantly improved when it was assumed that the refractive index of ITO films varied across the upper 60 nm near the film surface. Also, the surface roughness was modelled and compared with that given by the atomic force microscope (AFM).

  7. Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

    International Nuclear Information System (INIS)

    Wang, R.X.; Beling, C.D.; Fung, S.; Djurisic, A.B.; Ling, C.C.; Li, S.

    2005-01-01

    The influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In

  8. Additive manufactured Ti6Al4V scaffolds with the RF- magnetron sputter deposited hydroxyapatite coating

    International Nuclear Information System (INIS)

    Chudinova, E; Surmeneva, M; Surmenev, R; Koptioug, A; Scoglund, P

    2016-01-01

    Present paper reports on the results of surface modification of the additively manufactured porous Ti6Al4V scaffolds. Radio frequency (RF) magnetron sputtering was used to modify the surface of the alloy via deposition of the biocompatible hydroxyapatite (HA) coating. The surface morphology, chemical and phase composition of the HA-coated alloy were studied. It was revealed that RF magnetron sputtering allows preparing a homogeneous HA coating onto the entire surface of scaffolds. (paper)

  9. Characterization of copper thin films prepared by metal self-ion beam sputter deposition

    International Nuclear Information System (INIS)

    Gotoh, Yasuhito; Amioka, Takao; Tsuji, Hiroshi; Ishikawa, Junzo

    1994-01-01

    New deposition technique, 'metal-ion beam self-sputtering' method has been developed. Using metal ions which is the same element with the target material, no contamination with noble gas atoms, which are often used in the conventional sputtering, will occur. In this paper, fundamental measurement of the film purity is reported. As a result of PIXE measurements, it was clarified that only slight amount of iron is incorporated in the films. (author)

  10. Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

    Science.gov (United States)

    Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

    2011-09-01

    The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

  11. Study of Structure and Electro-Optical Characteristics of Indium Tin Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    N. M. Khusayfan

    2013-01-01

    Full Text Available ITO thin films were prepared by electron beam evaporation of ceramic ITO target. The films were subsequently annealed in air atmosphere at the temperatures 300°C and 600°C in order to improve their optical and electrical properties. The crystal structure and morphology of the films are investigated by X-ray diffraction and scanning electron microscope techniques, respectively. The films exhibited cubic structure with predominant orientation of growth along (222 direction, and the crystallite size increases by rising annealing temperature. Transparency of the films, over the visible light region, is increased by annealing temperature. The resulting increase in the carrier concentration and in the carrier mobility decreases the resistivity of the films due to annealing. The absorption coefficient of the films is calculated and analyzed. The direct allowed optical band gap for as-deposited films is determined as 3.81 eV; this value is increased to 3.88 and 4.0 eV as a result of annealing at 300°C and 600°C, respectively. The electrical sheet resistance is significantly decreased by increasing annealing temperature, whereas figure of merit is increased.

  12. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  13. Inhomogeneous strain states in sputter deposited tungsten thin films

    International Nuclear Information System (INIS)

    Noyan, I.C.; Shaw, T.M.; Goldsmith, C.C.

    1997-01-01

    The results of an x-ray diffraction study of dc-magnetron sputtered tungsten thin films are reported. It is shown that the phase transformation from the β to α W can cause multilayered single-phase films where the layers have very different stress states even if the films are in the 500 nm thickness range. copyright 1997 American Institute of Physics

  14. One-dimensional analysis of the rate of plasma-assisted sputter deposition

    International Nuclear Information System (INIS)

    Palmero, A.; Rudolph, H.; Habraken, F. H. P. M.

    2007-01-01

    In this article a recently developed model [A. Palmero, H. Rudolph, and F. H. P. M. Habraken, Appl. Phys. Lett. 89, 211501 (2006)] is applied to analyze the transport of sputtered material from the cathode toward the growing film when using a plasma-assisted sputtering deposition technique. The argon pressure dependence of the deposition rate of aluminum, silicon, vanadium, chromium, germanium, tantalum, and tungsten under several different experimental conditions has been analyzed by fitting experimental results from the literature to the above-mentioned theory. Good fits are obtained. Three quantities are deduced from the fit: the temperature of the cathode and of the growing film, and the value of the effective cross section for thermalization due to elastic scattering of a sputtered particle on background gas atoms. The values derived from the fits for the growing film and cathode temperature are very similar to those experimentally determined and reported in the literature. The effective cross sections have been found to be approximately the corresponding geometrical cross section divided by the average number of collisions required for the thermalization, implying that the real and effective thermalization lengths have a similar value. Finally, the values of the throw distance appearing in the Keller-Simmons model, as well as its dependence on the deposition conditions have been understood invoking the values of the cathode and film temperature, as well as of the value of the effective cross section. The analysis shows the overall validity of this model for the transport of sputtered particles in sputter deposition

  15. Characterization of surface-modified LiMn2O4 cathode materials with indium tin oxide (ITO) coatings and their electrochemical performance

    International Nuclear Information System (INIS)

    Kim, Chang-Sam; Kwon, Soon-Ho; Yoon, Jong-Won

    2014-01-01

    Graphical abstract: -- Highlights: • Indium tin oxide (ITO) is used to modify the surface of LiMn 2 O 4 by a sol–gel method. • The surface-modified layer was observed at a scale of several nanometers on LiMn 2 O 4 . • The ITO-coated LiMn 2 O 4 shows better capacity retention at 30 and 55 °C than pristine LiMn 2 O 4 . -- Abstract: Indium tin oxide (ITO) is used to modify the surface of LiMn 2 O 4 by a sol–gel method in an attempt to improve its electrochemical performance at elevated temperatures. The surface-modified LiMn 2 O 4 is characterized via XRD, FE-SEM, TEM, Auger electron spectroscopy (AES) and inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The surface layer modified by substitution with indium was observed at a scale of several nanometers near the surface on LiMn 2 O 4 . The concentration of ITO for electrochemical performance was varied from 0.3 wt% to 0.8 wt%. The 0.5 wt% ITO coated LiMn 2 O 4 showed the best electrochemical performance. This enhancement in electrochemical performance is mainly attributed to the effect of the surface layer modified through ITO, which could suppress Mn dissolution and reduce the charge transfer resistance at the solid electrolyte interface

  16. The role of Ar plasma treatment in generating oxygen vacancies in indium tin oxide thin films prepared by the sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Deuk-Kyu [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Misra, Mirnmoy; Lee, Ye-Eun [Department of BioNano Technology, Gachon University, 1342 Seong-nam dae-ro, Seong-nam si, Gyeonggi-do, 13120 (Korea, Republic of); Baek, Sung-Doo [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Myoung, Jae-Min, E-mail: jmmyoung@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seoul, 03722 (Korea, Republic of); Lee, Tae Il, E-mail: t2.lee77@gachon.ac.kr [Department of BioNano Technology, Gachon University, 1342 Seong-nam dae-ro, Seong-nam si, Gyeonggi-do, 13120 (Korea, Republic of)

    2017-05-31

    Highlights: • Indium tin oxide thin film with about 41 nm thickness was obtained by the sol-gel process. • Thin film exhibited low resistivity. • Sheet resistance of thin film decreases with Ar plasma treatment time. • Ar plasma treatment on thin film does not alter the crystal structure and optical properties of the ITO thin-film. • There is no significant change in oxygen vacancies after 20 min of plasma treatment. - Abstract: Argon (Ar) plasma treatment was carried out to reduce the sheet resistance of indium tin oxide (ITO) thin films. The Ar plasma treatment did not cause any significant changes to the crystal structure, surface morphology, or optical properties of the ITO thin films. However, an X-ray photoelectron spectroscopy study confirmed that the concentration of oxygen vacancies in the film dramatically increased with the plasma treatment time. Thus, we concluded that the decrease in the sheet resistance was caused by the increase in the oxygen vacancy concentration in the film. Furthermore, to verify how the concentration of oxygen vacancies in the film increased with the Ar plasma treatment time, cumulative and continuous plasma treatments were conducted. The oxygen vacancies were found to be created by surface heating via the outward thermal diffusion of oxygen atoms from inside the film.

  17. Development of an inductively coupled impulse sputtering source for coating deposition

    Science.gov (United States)

    Loch, Daniel Alexander Llewellyn

    In recent years, highly ionised pulsed plasma processes have had a great impact on improving the coating performance of various applications, such as for cutting tools and ITO coatings, allowing for a longer service life and improved defect densities. These improvements stem from the higher ionisation degree of the sputtered material in these processes and with this the possibility of controlling the flux of sputtered material, allowing the regulation of the hardness and density of coatings and the ability to sputter onto complex contoured substrates. The development of Inductively Coupled Impulse Sputtering (ICIS) is aimed at the potential of utilising the advantages of highly ionised plasma for the sputtering of ferromagnetic material. In traditional magnetron based sputter processes ferromagnetic materials would shunt the magnetic field of the magnetron, thus reducing the sputter yield and ionisation efficiency. By generating the plasma within a high power pulsed radio frequency (RF) driven coil in front of the cathode, it is possible to remove the need for a magnetron by applying a high voltage pulsed direct current to the cathode attracting argon ions from the plasma to initiate sputtering. This is the first time that ICIS technology has been deployed in a sputter coating system. To study the characteristics of ICIS, current and voltage waveforms have been measured to examine the effect of increasing RF-power. Plasma analysis has been conducted by optical emission spectroscopy to investigate the excitation mechanisms and the emission intensity. These are correlated to the set RF-power by modelling assumptions based on electron collisions. Mass spectroscopy is used to measure the plasma potential and ion energy distribution function. Pure copper, titanium and nickel coatings have been deposited on silicon with high aspect ratio via to measure the deposition rate and characterise the microstructure. For titanium and nickel the emission modelling results are in

  18. An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Garg, D.; Henderson, P.B.; Hollingsworth, R.E.; Jensen, D.G.

    2005-01-01

    The costs of manufacturing electrochromic WO 3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO 3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF 6 , sputtering cost is dominated by labor and depreciation

  19. An economic analysis of the deposition of electrochromic WO{sub 3} via sputtering or plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garg, D. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States); Henderson, P.B. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States)]. E-mail: henderpb@airproducts.co; Hollingsworth, R.E. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States); Jensen, D.G. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States)

    2005-06-15

    The costs of manufacturing electrochromic WO{sub 3} thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO{sub 3} for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF{sub 6}, sputtering cost is dominated by labor and depreciation.

  20. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    Energy Technology Data Exchange (ETDEWEB)

    Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  1. Effects of H2/O2 mixed gas plasma treatment on electrical and optical property of indium tin oxide

    International Nuclear Information System (INIS)

    Kim, Jun Young; Lee, Dong-Min; Kim, Jae-Kwan; Yang, Su-Hwan; Lee, Ji-Myon

    2013-01-01

    Highlights: ► The specific resistivity of ITO was enhanced by H 2 + O 2 mixed gas plasma treatment. ► The transmittance was same as that of untreated ITO after plasma treatment. ► The process was carried out at room temperature without any step of post-treatment. - Abstract: This study examined the effects of H 2 and H 2 + O 2 mixed gas plasma treatment on the properties of ITO films. The films were deposited on corning glass by RF magnetron sputtering under Ar and Ar/O 2 mixed gas ambient. After a H 2 plasma treatment, the ITO films showed an improved specific resistance due to the formation of oxygen vacancies acting as shallow donors, but showed quenched transmittance due to the formation of agglomerated metals on the surface. After an H 2 + O 2 mixed gas plasma treatment, the specific resistance of the film was improved without deteriorating transmittance. The enhanced specific resistance by mixed gas plasma treatment was attributed to the formation of free electrons by the incorporation of H in the lattice.

  2. Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

    Science.gov (United States)

    He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

    2013-10-01

    In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

  3. Characteristics of sputtered Al-doped ZnO films for transparent electrodes of organic thin-film transistor

    International Nuclear Information System (INIS)

    Park, Yong Seob; Kim, Han-Ki

    2011-01-01

    Aluminum-doped ZnO (AZO) thin-films were deposited with various RF powers at room temperature by radio frequency (RF) magnetron sputtering method. The electrical properties of the AZO film were improved with the increasing RF power. These results can be explained by the improvement of the crystallinity in the AZO film. We fabricated the organic thin-film transistor (OTFT) of the bottom gate structure using pentacene active and poly-4-vinyl phenol gate dielectric layers on the indium tin oxide gate electrode, and estimated the device properties of the OTFTs including drain current-drain voltage (I D -V D ), drain current-gate voltage (I D -V G ), threshold voltage (V T ), on/off ratio and field effect mobility. The AZO film that grown at 160 W RF power exhibited low resistivity (1.54 x 10 -3 Ω.cm), high crystallinity and uniform surface morphology. The pentacene thin-film transistor using the AZO film that's fabricated at 160 W RF power exhibited good device performance such as the mobility of 0.94 cm 2 /V s and the on/off ratio of ∼ 10 5 . Consequently, the performance of the OTFT such as larger field-effect carrier mobility was determined the conductivity of the AZO source/drain (S/D) electrode. AZO films prepared at room temperature by the sputtering method are suitable for the S/D electrodes in the OTFTs.

  4. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  5. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  6. Advanced TiC/a-C : H nanocomposite coatings deposited by magnetron sputtering

    NARCIS (Netherlands)

    Pei, Y.T.; Galvan, D.; Hosson, J.Th.M. De; Strondl, C.

    2006-01-01

    TiC/a-C:H nanocomposite coatings have been deposited by magnetron Sputtering. They consist of 2-5 nm TiC nanocrystallites embedded in the amorphous hydrocarbon (a-C:H) matrix. A transition from a Columnar to a glassy microstructure has been observed in the nanocomposite coatings with increasing

  7. Control of the optical properties of silicon and chromium mixed oxides deposited by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Vergara, L.; Galindo, R. Escobar; Martinez, R.; Sanchez, O.; Palacio, C.; Albella, J.M.

    2011-01-01

    The development of mixed-oxide thin films allows obtaining materials with better properties than those of the different binary oxides, which makes them suitable for a great number of applications in different fields, such as tribology, optics or microelectronics. In this paper we investigate the deposition of mixed chromium and silicon oxides deposited by reactive magnetron sputtering with a view to use them as optical coatings with an adjustable refractive index. These films have been characterized by means of Rutherford backscattering spectrometry, Auger electron spectroscopy, X-ray diffraction, scanning electron microscopy, Fourier-transform infrared spectroscopy and spectroscopic ellipsometry so as to determine how the deposition conditions influence the characteristics of the material. We have found that the deposition parameter whose influence determines the properties of the films to a greater extent is the amount of oxygen in the reactive sputtering gas.

  8. Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

    Science.gov (United States)

    Ali, Ahmad Hadi; Hassan, Zainuriah; Shuhaimi, Ahmad

    2018-06-01

    This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500-700 °C. From X-ray diffraction analysis (XRD), ITO (2 2 2) peak was observed after post-annealing indicating crystallization phase of the films. From UV-vis measurements, the ITO thin film shows highest transmittance of more than 90% at post-annealing temperature of 700 °C as compared to the as-deposited thin films. From atomic force microscope (AFM), the surface roughness becomes smoother after post-annealing as compared to the as-deposited. The lowest electrical resistivity for ITO sample is 6.68 × 10-4 Ω cm after post-annealed at 700 °C that are contributed by high carrier concentration and mobility. The improved structural and surface morphological characteristics helps in increasing the optical transmittance and reducing the electrical resistivity of the ITO thin films.

  9. The Photocatalytic Activity and Compact Layer Characteristics of TiO2 Films Prepared Using Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    H. C. Chang

    2014-01-01

    Full Text Available TiO2 compact layers are used in dye-sensitized solar cells (DSSCs to prevent charge recombination between the electrolyte and the transparent conductive substrate (indium tin oxide, ITO; fluorine-doped tin oxide, FTO. Thin TiO2 compact layers are deposited onto ITO/glass by means of radio frequency (rf magnetron sputtering, using deposition parameters that ensure greater photocatalytic activity and increased DSSC conversion efficiency. The photoinduced decomposition of methylene blue (MB and the photoinduced hydrophilicity of the TiO2 thin films are also investigated. The photocatalytic performance characteristics for the deposition of TiO2 films are improved by using the Grey-Taguchi method. The average transmittance in the visible region exceeds 85% for all samples. The XRD patterns of the TiO2 films, for sol-gel with spin coating of porous TiO2/TiO2 compact/ITO/glass, show a good crystalline structure. In contrast, without the TiO2 compact layer (only porous TiO2, the peak intensity of the anatase (101 plane in the XRD patterns for the TiO2 film has a lower value, which demonstrates inferior crystalline quality. With a TiO2 compact layer to prevent charge recombination, a higher short-circuit current density is obtained. The DSSC with the FTO/glass and Pt counter electrode demonstrates the energy conversion efficiency increased.

  10. Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    Krawczak Ewelina

    2017-01-01

    Full Text Available The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

  11. Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications

    Science.gov (United States)

    Krawczak, Ewelina; Gułkowski, Sławomir

    2017-10-01

    The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined.

  12. Development of AlInN photoconductors deposited by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nunez-Cascajero, Arantzazu; Jimenez-Rodriguez, Marco; Gonzalez-Herraez, Miguel; Naranjo, Fernando B. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Universidad de Alcala, Madrid (Spain); Monroy, Eva [Universite Grenoble-Alpes, Grenoble (France); CEA-Grenoble, INAC-PHELIQS, Grenoble (France)

    2017-09-15

    In this work, we have developed photoconductor devices based on Al{sub 0.39}In{sub 0.61}N layers grown on sapphire by reactive radio-frequency magnetron sputtering. The fabricated devices show a sublinear dependence of the photocurrent as a function of the incident optical power. The above-the-band-gap responsivity reaches 7 W/A for an irradiance of 10 W/m{sup 2} (405 nm wavelength). The response decreases smoothly for below-the-bandgap excitation, dropping by more than an order of magnitude at 633 nm. The devices present persistent photoconductivity effects associated to carrier trapping at grain boundaries. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Entrapment of krypton in sputter deposited metals: a storage medium for radioactive gases

    International Nuclear Information System (INIS)

    Tingey, G.L.; McClanahan, E.D.; Bayne, M.A.; Moss, R.W.

    1979-04-01

    Sputter deposition of metals with a negative substrate bias results in a deposit containing relatively large concentrations of the sputtering gas. This phenomenon has been applied as a technique for storage of the radioactive gas, 85 Kr, which is generated in nuclear fuels for power production. Alloys which sputter to yield an amorphous product have been shown to contain up to 12 atom % Kr [42 cm 3 of Kr(STP)/g of deposit; concentration equivalent to a gas at 4380 psi pressure]. Release from these metals occurs at so low a rate that extrapolation to long times yields a 85 Kr release at 300 0 C of about 0.06% in 100 years. A preliminary evaluation of the engineering feasibility and economics of the sputtering process indicates that 85 Kr can be effectively trapped in a solid matrix with currently available techniques on a scale required for handling DOE-generated waste or commercial reprocessed fuels and that the cost should not be a limiting factor

  14. Deposition and characterization of ITO films produced by laser ablation at 355 nm

    DEFF Research Database (Denmark)

    Holmelund, E.; Thestrup Nielsen, Birgitte; Schou, Jørgen

    2002-01-01

    Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence...

  15. Composition, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

    Energy Technology Data Exchange (ETDEWEB)

    Annadurai, A.; Nandakumar, A.K.; Jayakumar, S.; Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore 641004 (India); Manivel Raja, M.; Bysak, S. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India); Gopalan, R. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)], E-mail: rg_gopy@yahoo.com; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)

    2009-03-15

    Polycrystalline Ni-Mn-Ga thin films were deposited by the d.c. magnetron sputtering on well-cleaned substrates of Si(1 0 0) and glass at a constant sputtering power of 36 W. We report the influence of sputtering pressure on the composition, structure and magnetic properties of the sputtered thin films. These films display ferromagnetic behaviour only after annealing at an elevated temperature and a maximum saturation magnetization of 335 emu/cc was obtained for the films investigated. Evolution of martensitic microstructure was observed in the annealed thin films with the increase of sputtering pressure. The thermo-magnetic curves exhibited only magnetic transition in the temperature range of 339-374 K. The thin film deposited at high sputtering pressure of 0.025 mbar was found to be ordered L2{sub 1} austenitic phase.

  16. Light Output Enhancement of InGaN/GaN Light-Emitting Diodes with Contrasting Indium Tin-Oxide Nanopatterned Structures

    Directory of Open Access Journals (Sweden)

    Sang Hyun Jung

    2013-01-01

    Full Text Available Various nanopatterns on the transparent conducting indium tin oxide (ITO layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs. Triangular, square, and circular nanohole patterns with the square and hexagonal lattices are fabricated on the ITO layer by an electron beam lithography and inductively coupled plasma dry etching processes. The circular hole pattern with a hexagonal geometry is found to be the most effective among the studied structures. Light output intensity measurements reveal that the circular hole nanopatterned ITO LEDs with a hexagonal lattice show up to 35.6% enhancement of output intensity compared to the sample without nanopatterns.

  17. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

    2014-07-07

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  18. High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup ¯}1{sup ¯}) GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Pourhashemi, A., E-mail: pourhashemi@engr.ucsb.edu; Farrell, R. M.; Cohen, D. A.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); DenBaars, S. P.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2015-03-16

    We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup ¯}1{sup ¯}) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

  19. Injection of holes at indium tin oxide/dendrimer interface: An explanation with new theory of thermionic emission at metal/organic interfaces

    International Nuclear Information System (INIS)

    Peng Yingquan; Lu Feiping

    2006-01-01

    The traditional theory of thermionic emission at metal/inorganic crystalline semiconductor interfaces is no longer applicable for the interface between a metal and an organic semiconductor. Under the assumption of thermalization of hot carriers in the organic semiconductor near the interface, a theory for thermionic emission of charge carriers at metal/organic semiconductor interfaces is developed. This theory is used to explain the experimental result from Samuel group [J.P.J. Markham, D.W. Samuel, S.-C. Lo, P.L. Burn, M. Weiter, H. Baessler, J. Appl. Phys. 95 (2004) 438] for the injection of holes from indium tin oxide into the dendrimer based on fac-tris(2-phenylpyridyl) iridium(III)

  20. Chlorinated indium tin oxide electrode by InCl{sub 3} aqueous solution for high-performance organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yun; Wang, Bo; Wang, Zhao-Kui, E-mail: zkwang@suda.edu.cn, E-mail: lsliao@suda.edu.cn; Liao, Liang-Sheng, E-mail: zkwang@suda.edu.cn, E-mail: lsliao@suda.edu.cn [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China); Zhou, Dong-Ying [Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China); College of Physics, Optoelectronics and Energy, Soochow University, Suzhou, Jiangsu 215123 (China)

    2016-04-11

    The authors develop a facile and effective method to produce the chlorinated indium tin oxide (Cl-ITO) treated by InCl{sub 3} aqueous solution and UV/ozone. The work function of the Cl-ITO achieved by this treatment is as high as 5.69 eV, which is increased by 1.09 eV compared with that of the regular ITO without any treatment. Further investigation proved that the enhancement of the work function is attributed to the formation of In-Cl bonds on the Cl-ITO surface. Green phosphorescent organic light-emitting devices based on the Cl-ITO electrodes exhibit excellent electroluminescence performance, elongating lifetime due to the improvement in hole injection.

  1. Role of Nitrogenase and Ferredoxin in the Mechanism of Bioelectrocatalytic Nitrogen Fixation by the Cyanobacteria Anabaena variabilis SA-1 Mutant Immobilized on Indium Tin Oxide (ITO) Electrodes

    International Nuclear Information System (INIS)

    Knoche, Krysti L.; Aoyama, Erika; Hasan, Kamrul; Minteer, Shelley D.

    2017-01-01

    Current ammonia production methods are costly and environmentally detrimental. Biological nitrogen fixation has implications for low cost, environmentally friendly ammonia production. It has been shown that electrochemical stimulation increases the ammonia output of the cyanobacteria SA-1 mutant of Anabaena variabilis, but the mechanism of bioelectrocatalysis has been unknown. Here, the mechanism of electrostimulated biological ammonia production is investigated by immobilization of the cyanobacteria with polyvinylamine on indium tin oxide (ITO) coated polyethylene. Cyclic voltammetry is performed in the absence and presence of various substrates and with nitrogenase repressed and nitrogenase derepressed cells to study mechanism, and cyclic voltammetry and UV–vis spectroscopy are used to identify redox moieties in the spent electrolyte. A bioelectrocatalytic signal is observed for nitrogenase derepressed A. variabilis SA-1 in the presence of N_2 and light. Results indicate that the redox protein ferredoxin mediates electron transfer between nitrogenase and the electrode to stimulate ammonia production.

  2. Oxygen-ion-migration-modulated bipolar resistive switching and complementary resistive switching in tungsten/indium tin oxide/gold memory device

    Science.gov (United States)

    Wu, Xinghui; Zhang, Qiuhui; Cui, Nana; Xu, Weiwei; Wang, Kefu; Jiang, Wei; Xu, Qixing

    2018-06-01

    In this paper, we report our investigation of room-temperature-fabricated tungsten/indium tin oxide/gold (W/ITO/Au) resistive random access memory (RRAM), which exhibits asymmetric bipolar resistive switching (BRS) behavior. The device displays good write/erase endurance and data retention properties. The device shows complementary resistive switching (CRS) characteristics after controlling the compliance current. A WO x layer electrically formed at the W/ITO in the forming process. Mobile oxygen ions within ITO migrate toward the electrode/ITO interface and produce a semiconductor-like layer that acts as a free-carrier barrier. The CRS characteristic here can be elucidated in light of the evolution of an asymmetric free-carrier blocking layer at the electrode/ITO interface.

  3. Ion beam and dual ion beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1994-11-01

    Ion beam sputter deposition (IBS) and dual ion beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. Optical properties ie refractive index and extinction coefficient of IBS films were determined in the 250 - 1100 nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n equals 2.06 at (lambda) equals 550 nm. Films deposited using DIBS ie deposition assisted by low energy Ar and O2 ions (Ea equals 0 - 300 eV) and low current density (Ji equals 0 - 40 (mu) A/cm2) showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy while composition of the film and contaminants were determined by Rutherford scattering spectroscopy. Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target while assisted deposition slightly increased the Ar content. Stress in the IBS deposited films was measured by the bending technique. IBS deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals 35 (mu) A/cm2. All

  4. Ion-beam and dual-ion-beam sputter deposition of tantalum oxide films

    Science.gov (United States)

    Cevro, Mirza; Carter, George

    1995-02-01

    Ion-beam sputter deposition (IBS) and dual-ion-beam sputter deposition (DIBS) of tantalum oxide films was investigated at room temperature and compared with similar films prepared by e-gun deposition. The optical properties, i.e., refractive index and extinction coefficient, of IBS films were determined in the 250- to 1100-nm range by transmission spectrophotometry and at (lambda) equals 632.8 nm by ellipsometry. They were found to be mainly sensitive to the partial pressure of oxygen used as a reactive gas in the deposition process. The maximum value of the refractive index of IBS deposited tantalum oxide films was n equals 2.15 at (lambda) equals 550 nm and the extinction coefficient of order k equals 2 X 10-4. Films deposited by e-gun deposition had refractive index n 2.06 at (lambda) equals 550 nm. Films deposited using DIBS, i.e., deposition assisted by low energy Ar and O2 ions (Ea equals 0 to 300 eV) and low current density (Ji equals 0 to 40 (mu) A/cm2), showed no improvement in the optical properties of the films. Preferential sputtering occurred at Ea(Ar) equals 300 eV and Ji equals 20 (mu) A/cm2 and slightly oxygen deficient films were formed. Different bonding states in the tantalum-oxide films were determined by x-ray spectroscopy, whereas composition of the film and contaminants were determined by Rutherford backscattering spectroscopy (RBS). Tantalum oxide films formed by IBS contained relatively high Ar content (approximately equals 2.5%) originating from the reflected argon neutrals from the sputtering target whereas assisted deposition slightly increased the Ar content. Stress in the IBS-deposited films was measured by the bending technique. IBS-deposited films showed compressive stress with a typical value of s equals 3.2 X 109 dyn/cm2. Films deposited by concurrent ion bombardment showed an increase in the stress as a function of applied current density. The maximum was s approximately equals 5.6 X 109 dyn/cm2 for Ea equals 300 eV and Ji equals

  5. Microstructural evaluation of NiTi-based films deposited by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Crăciunescu, Corneliu M., E-mail: corneliu.craciunescu@upt.ro; Mitelea, Ion, E-mail: corneliu.craciunescu@upt.ro; Budău, Victor, E-mail: corneliu.craciunescu@upt.ro [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara (Romania); Ercuţa, Aurel [Department of Materials and Manufacturing Engineering, Politehnica University of Timisoara and Department of Physics, West University Timisoara (Romania)

    2014-11-24

    Shape memory alloy films belonging to the NiTi-based systems were deposited on heated and unheated substrates, by magnetron sputtering in a custom made system, and their structure and composition was analyzed using electron microscopy. Several substrates were used for the depositions: glass, Cu-Zn-Al, Cu-Al-Ni and Ti-NiCu shape memory alloy ribbons and kapton. The composition of the Ti-Ni-Cu films showed limited differences, compared to the one of the target and the microstructure for the DC magnetron sputtering revealed crystallized structure with features determined on peel off samples from a Si wafer. Both inter and transcrystalline fractures were observed and related to the interfacial stress developed on cooling from deposition temperature.

  6. Mechanical properties of TiN films deposited by changed-pressure r.f. sputtering

    International Nuclear Information System (INIS)

    Kubo, Y.; Hashimoto, M.

    1991-01-01

    TiN was deposited onto glass, stainless steel and cemented carbide by r.f. magnetron sputtering. The mechanical properties of TiN such as hardness, internal stress and adhesion were assessed by the Vickers microhardness test, the bending method and the modified scratch test. It was found that the operating pressure during sputtering deposition strongly affects these mechanical properties. As the operating pressure is increased beyond 0.6-0.7 Pa, the adhesion of TiN films onto the substrate increases enormously, but the hardness decreases owing to the release of the high compressive stress in the film. Therefore changing the pressure from high to low during deposition could be a good way of optimizing both hardness and adhesion. The effectiveness of this changed-pressure process was experimentally verified by cutting tests using TiN-coated cemented carbide tools. This process will be applicable to any other hard coating materials having high compressive stresses. (orig.)

  7. Highly sensitive detection of 2,4,6-trichlorophenol based on HS-β-cyclodextrin/gold nanoparticles composites modified indium tin oxide electrode

    International Nuclear Information System (INIS)

    Zheng, Xiangli; Liu, Shan; Hua, Xiaoxia; Xia, Fangquan; Tian, Dong; Zhou, Changli

    2015-01-01

    Graphical abstract: Display Omitted -- Highlights: •A novel electrochemical sensing platform by self-assembling of HS-β-cyclodextrin/gold nanoparticles onto indium tin oxide electrode (HS-β-CD/AuNPs/SAM/ITO electrode) surface was constructed. •The proposed electrochemical sensor exhibited high sensitivity for the determination 2,4,6-trichlorophenol which electrochemical activity is very weak. •The newly developed method was successfully applied to quantitatively determine 2,4,6-trichlorophenol in tap water samples. -- ABSTRACT: A new electrochemical sensor for determination of 2,4,6-trichlorophenol (2,4,6-TCP) was fabricated. The characterization of the sensor was studied by scanning electron microscopy, electrochemical impedance spectroscopy and cyclic voltammetry techniques. The electrochemical behavior of 2,4,6-TCP was investigated using cyclic voltammetry and differential pulse voltammetry at the HS-β-cyclodextrin (HS-β-CD)/gold nanoparticles (AuNPs) composite modified indium tin oxide (ITO) electrode. The results showed that the current responses of 2,4,6-TCP greatly enhanced due to the high catalytic activity and enrichment capability of composites. The peak current of 2,4,6-TCP increases linearly with the increase of the 2,4,6-TCP concentration from 3.0 × 10 −9 to 2.8 × 10 −8 M, with the limit of detection of 1.0 × 10 −9 . Further more, the modified electrode was successfully applied to detect the level of 2,4,6-TCP in tap water samples with excellent sensitivity

  8. Formation of metal nanoparticles by short-distance sputter deposition in a reactive ion etching chamber

    International Nuclear Information System (INIS)

    Nie Min; Meng, Dennis Desheng; Sun Kai

    2009-01-01

    A new method is reported to form metal nanoparticles by sputter deposition inside a reactive ion etching chamber with a very short target-substrate distance. The distribution and morphology of nanoparticles are found to be affected by the distance, the ion concentration, and the sputtering time. Densely distributed nanoparticles of various compositions were fabricated on the substrates that were kept at a distance of 130 μm or smaller from the target. When the distance was increased to 510 μm, island structures were formed, indicating the tendency to form continuous thin film with longer distance. The observed trend for nanoparticle formation is opposite to the previously reported mechanism for the formation of nanoparticles by sputtering. A new mechanism based on the seeding effect of the substrate is proposed to interpret the experimental results.

  9. Arc-discharge and magnetron sputtering combined equipment for nanocomposite coating deposition

    International Nuclear Information System (INIS)

    Koval, N.N.; Borisov, D.P.; Savostikov, V.M.

    2005-01-01

    It is known that characteristics of nanocomposite coatings produced by reactive magnetron sputtering undergo an essential influence on the following parameters such as original component composition of targets being sputtered, as well as abundance ratio of such components in the coatings deposited, relative content of inert and reactionary gases in a gas mixture used and a value of operating pressure in a chamber, substrate temperature, and a value of substrate bias potential, determining energy of ionized atoms, ionized atoms flow density, i.e. ion current density on a substrate. The multifactor character of production process of nanocomposite coatings with certain physical and mechanical properties demands a purposeful and complex control on all above-mentioned parameters. To solve such a problem, an arc-discharge and magnetron sputtering combined equipment including a vacuum chamber of approximately ∼ 0.5 m 3 with a built-in low-pressure plasma generator made on the basis of non-self-sustained discharge with a thermal cathode and a planar magnetron combined with two sputtered targets has been created. Construction of such a complex set-up provides both an autonomous mode of operation and simultaneous operation of an arc plasma generator and magnetron sputtering system. Magnetron sputtering of either one or two targets simultaneously is provided as well. An arc plasma generator enables ions current density control on a substrate in a wide range due to discharge current varying from 1 to 100 A. Energy of ions is also being controlled in a wide range by a negative bias potential from 0 to 1000 V applied to a substrate. The wide control range of gas plasma density of a arc discharge of approximately 10 9 -10 11 cm -3 and high uniformity of its distribution over the total volume of an operating chamber (about 15% error with regard to the mean value) provides a purposeful and simultaneous control either of magnetron discharge characteristics (operating pressure of

  10. Characterization of Niobium Oxide Films Deposited by High Target Utilization Sputter Sources

    International Nuclear Information System (INIS)

    Chow, R; Ellis, A D; Loomis, G E; Rana, S I

    2007-01-01

    High quality, refractory metal, oxide coatings are required in a variety of applications such as laser optics, micro-electronic insulating layers, nano-device structures, electro-optic multilayers, sensors and corrosion barriers. A common oxide deposition technique is reactive sputtering because the kinetic mechanism vaporizes almost any solid material in vacuum. Also, the sputtered molecules have higher energies than those generated from thermal evaporation, and so the condensates are smoother and denser than those from thermally-evaporated films. In the typical sputtering system, target erosion is a factor that drives machine availability. In some situations such as nano-layered capacitors, where the device's performance characteristics depends on thick layers, target life becomes a limiting factor on the maximizing device functionality. The keen interest to increase target utilization in sputtering has been addressed in a variety of ways such as target geometry, rotating magnets, and/or shaped magnet arrays. Also, a recent sputtering system has been developed that generates a high density plasma, directs the plasma beam towards the target in a uniform fashion, and erodes the target in a uniform fashion. The purpose of this paper is to characterize and compare niobia films deposited by two types of high target utilization sputtering sources, a rotating magnetron and a high density plasma source. The oxide of interest in this study is niobia because of its high refractive index. The quality of the niobia films were characterized spectroscopically in optical transmission, ellipsometrically, and chemical stoichiometry with X-ray photo-electron spectroscopy. The refractive index, extinction coefficients, Cauchy constants were derived from the ellipsometric modeling. The mechanical properties of coating density and stress are also determined

  11. Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

    2007-01-01

    We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

  12. FAST TRACK COMMUNICATION: Deposition of amino-rich thin films by RF magnetron sputtering of nylon

    Science.gov (United States)

    Kylián, O.; Hanuš, J.; Choukourov, A.; Kousal, J.; Slavínská, D.; Biederman, H.

    2009-07-01

    RF magnetron sputtering of a nylon target in different gas mixtures was studied in order to evaluate the capability of this process to deposit amino-rich coatings needed in a wide range of biomedical applications. It has been demonstrated that both the deposition rate of the coatings and the surface density of primary amino groups are strongly linked with working gas mixture composition. From this point of view, a sufficiently high deposition rate as well as the highest amine efficiency reaching a NH2/C value of 18% was observed in the N2/H2 discharge, which leads to the surface exhibiting a high rate of protein adsorption.

  13. Deposition of nanostructured fluorocarbon plasma polymer films by RF magnetron sputtering of polytetrafluoroethylene

    Energy Technology Data Exchange (ETDEWEB)

    Kylian, Ondrej, E-mail: ondrej.kylian@gmail.com; Drabik, Martin; Polonskyi, Oleksandr; Cechvala, Juraj; Artemenko, Anna; Gordeev, Ivan; Choukourov, Andrei; Matolinova, Iva; Slavinska, Danka; Biederman, Hynek, E-mail: bieder@kmf.troja.mff.cuni.cz

    2011-07-29

    The RF magnetron sputtering of polytetrafluoroethylene target is studied with the aim to find out conditions leading to the deposition of super-hydrophobic thin films. It is shown that such coatings can be prepared at elevated pressures and a longer distance between the sputtered target and the substrate. This is explained by an increase in the density of longer C{sub x}F{sub y} molecules that reach the substrate and a lower flux of ions and CF{sub 2} radicals on the surface of growing film under such deposition conditions, as observed by optical emission spectroscopy and mass spectrometry. Such changes in plasma composition result in a deposition of rough films having F/C ratio close to 2 as observed by scanning electron microscopy and X-ray photoelectron spectroscopy, respectively. These findings clearly distinguish our results from the previous investigations of polytetrafluoroethylene sputtering performed at shorter distances from the target, where either low F/C ratio or low roughness of the deposited films did not allow reaching super-hydrophobic character of the coatings.

  14. Control of composition and crystallinity in hydroxyapatite films deposited by electron cyclotron resonance plasma sputtering

    Science.gov (United States)

    Akazawa, Housei; Ueno, Yuko

    2014-01-01

    Hydroxyapatite (HAp) films were deposited by electron cyclotron resonance plasma sputtering under a simultaneous flow of H2O vapor gas. Crystallization during sputter-deposition at elevated temperatures and solid-phase crystallization of amorphous films were compared in terms of film properties. When HAp films were deposited with Ar sputtering gas at temperatures above 460 °C, CaO byproducts precipitated with HAp crystallites. Using Xe instead of Ar resolved the compositional problem, yielding a single HAp phase. Preferentially c-axis-oriented HAp films were obtained at substrate temperatures between 460 and 500 °C and H2O pressures higher than 1×10-2 Pa. The absorption signal of the asymmetric stretching mode of the PO43- unit (ν3) in the Fourier-transform infrared absorption (FT-IR) spectra was the narrowest for films as-crystallized during deposition with Xe, but widest for solid-phase crystallized films. While the symmetric stretching mode of PO43- (ν1) is theoretically IR-inactive, this signal emerged in the FT-IR spectra of solid-phase crystallized films, but was absent for as-crystallized films, indicating superior crystallinity for the latter. The Raman scattering signal corresponding to ν1 PO43- sensitively reflected this crystallinity. The surface hardness of as-crystallized films evaluated by a pencil hardness test was higher than that of solid-phase crystallized films.

  15. Electrical, optical and etching properties of Zn-Sn-O thin films deposited by combinatorial sputtering

    International Nuclear Information System (INIS)

    Kim, J. S.; Park, J. K.; Baik, Y. J.; Kim, W. M.; Jeong, J.; Seong, T. Y.

    2012-01-01

    Zn-Sn-O (ZTO) films are known to be able to form an amorphous phase, which provides a smooth surface morphology as well as etched side wall, when deposited by using the conventional sputtering technique and, therefore, to have a potential to be applied as transparent thin film transistors. In this study, ZTO thin films were prepared by using combined sputtering of ZnO and SnO 2 targets, and the dependences of their electrical and optical properties on the composition and the deposition parameters were examined. The Sn content in the films was varied in the range of 35 ∼ 85 at .%. The deposition was carried out at room temperature, 150 and 300 .deg. C, and the oxygen content in sputtering gas was varied from 0 to 1 vol.%. Sn-rich films had better electrical properties, but showed large oxygen deficiency when deposited at low oxygen partial pressures. ZTO films with Sn contents lower than 55 at.% had good optical transmission, but the electrical properties were poor due to very low carrier concentrations. A high Hall mobility of larger than 10 cm 2 /Vs could be obtained in the carrier density range 10 17 ∼ 10 20 cm -3 , and the etching rate was measurable for films with Sn content up to 70 at.% when using a dilute HCl solution, indicating a good possibility of utilizing ZTO films for device applications.

  16. Direct current magnetron sputter-deposited ZnO thin films

    International Nuclear Information System (INIS)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

    2011-01-01

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  17. Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Shaozhu; Shi, Kai; Deng, Shutong; Han, Zhenghe [Applied Superconductivity Research Center, Department of Physics, Tsinghua University, Beijing 100084 (China); Feng, Feng, E-mail: feng.feng@sz.tsinghua.edu.cn; Lu, Hongyuan [Division of Advanced Manufacturing, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Qu, Timing; Zhu, Yuping [Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China); Huang, Rongxia [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China)

    2015-07-15

    In this study, MgO thin films were deposited by radio-frequency magnetron sputtering. The film thickness in the deposition area directly facing the target center obviously decreased compared with that in other areas. This reduction in thickness could be attributed to the resputtering effect resulting from bombardment by energetic particles mainly comprising oxygen atoms and negative oxygen ions. The influences of deposition position and sputtering pressure on the deposition rate were investigated. Resputtering altered the orientation of the MgO film from (111) to (001) when the film was deposited on a single crystal yttria-stabilized zirconia substrate. The density distribution of energetic particles was calculated on the basis of the measured thicknesses of the MgO films deposited at different positions. The divergence angle of the energetic particle flux was estimated to be approximately 15°. The energetic particle flux might be similar to the assisting ion flux in the ion beam assisted deposition process and could affect the orientation of the MgO film growth.

  18. Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics

    KAUST Repository

    Alshammari, Fwzah Hamud; Hota, Mrinal Kanti; Wang, Zhenwei; Aljawhari, Hala; Alshareef, Husam N.

    2017-01-01

    Atomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93

  19. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  20. Investigation of photocatalytic activity of titanium dioxide deposited on metallic substrates by DC magnetron sputtering

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Canulescu, Stela; Dirscherl, Kai

    2013-01-01

    The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology of the c......The photocatalytic properties of titanium dioxide (TiO2) coating in the anatase crystalline structure deposited on aluminium AA1050 alloy and stainless steel S316L substrates were investigated. The coating was prepared by DC magnetron sputtering. The microstructure and surface morphology...... sweep voltammetry, impedance measurements. The microstructure and surface morphology of the coating were similar irrespective of the nature of the substrate, while the photocatalytic behaviour was found to vary depending on the substrate type. In general the TiO2 coating on stainless steel was shown...

  1. Third-order nonlinear optical response of colloidal gold nanoparticles prepared by sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Castro, Hemerson P. S.; Alencar, Márcio A. R. C.; Hickmann, Jandir M. [Optics and Materials Group–OPTMA, Universidade Federal de Alagoas, CAIXA POSTAL 2051, 57061-970 Maceió (Brazil); Wender, Heberton [Brazilian Synchrotron National Laboratory (LNLS), CNPEM, Rua Giuseppe Máximo Scolfaro 10.000, 13083-970 Campinas (Brazil); Department of Physics, Universidade Federal do Mato Grosso do Sul, 79070-900, Campo Grande (Brazil); Teixeira, Sergio R. [Institute of Physics, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre (Brazil); Dupont, Jairton [Laboratory of Molecular Catalysis, Institute of Chemistry, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre (Brazil)

    2013-11-14

    The nonlinear optical responses of gold nanoparticles dispersed in castor oil produced by sputtering deposition were investigated, using the thermally managed Z-scan technique. Particles with spherical shape and 2.6 nm of average diameter were obtained and characterized by transmission electron microscopy and small angle X-ray scattering. This colloid was highly stable, without the presence of chemical impurities, neither stabilizers. It was observed that this system presents a large refractive third-order nonlinear response and a negligible nonlinear absorption. Moreover, the evaluation of the all-optical switching figures of merit demonstrated that the colloidal nanoparticles prepared by sputtering deposition have a good potential for the development of ultrafast photonic devices.

  2. Growing LaAlO3/SrTiO3 interfaces by sputter deposition

    Directory of Open Access Journals (Sweden)

    I. M. Dildar

    2015-06-01

    Full Text Available Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO3 on SrTiO3 substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.

  3. Progress on sputter-deposited thermotractive titanium-nickel films

    International Nuclear Information System (INIS)

    Grummon, D.S.; Hou Li; Zhao, Z.; Pence, T.J.

    1995-01-01

    It is now well established that titanium-nickel alloys fabricated as thin films by physical vapor deposition can display the same transformation and shape-memory effects as their ingot-metallurgy counterparts. As such they may find important application to microelectromechanical and biomechanical systems. Furthermore, we show here that titanium-nickel films may be directly processed so as to possess extremely fine austenite grain size and very high strength. These films display classical transformational superelasticity, including high elastic energy storage capacity, the expected dependence of martensite-start temperature on transformation enthalpy, and large, fully recoverable anelastic strains at temperatures above A f . Processing depends on elevated substrate temperatures during deposition, which may be manipulated within a certain range to control both grain size and crystallographic texture. It is also possible to deposit crystalline titanium-nickel films onto polymeric substrates, making them amenable to lithographic patterning into actuator elements that are well-suited to electrical excitation of the martensite reversion transformation. Finally, isothermal annealing of nickel-rich films, under conditions of controlled extrinsic residual stress, leads to topotaxial orientation of Ni 4 Ti 3 -type precipitates, and the associated possibility of two-way memory effects. Much work remains to be done, especially with respect to precise control of composition. (orig.)

  4. Stress and stability of sputter deposited A-15 and bcc crystal structure tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    O' Keefe, M.J.; Stutz, C.E.

    1997-07-01

    Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film stress measurement system. The as-deposited film stress was found to be a function of the sputtering pressure and presputter time; under conditions in which the as-deposited stress of the film was {approximately}1.5 GPa compressive delamination of the W film from the substrate was observed. Data from the thermal studies indicated that bcc film stress was not affected by annealing but transformation of the A-15 structure resulted in a large tensile increase in the stress of the film, regardless of the as-deposited stress of the film. In several instances, complete transformation of the A-15 structure into the bcc phase resulted in {ge}1 GPa tensile increase in film stress.

  5. Stress and stability of sputter deposited A-15 and bcc crystal structure tungsten thin films

    International Nuclear Information System (INIS)

    O'Keefe, M.J.; Stutz, C.E.

    1997-01-01

    Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film stress measurement system. The as-deposited film stress was found to be a function of the sputtering pressure and presputter time; under conditions in which the as-deposited stress of the film was approximately1.5 GPa compressive delamination of the W film from the substrate was observed. Data from the thermal studies indicated that bcc film stress was not affected by annealing but transformation of the A-15 structure resulted in a large tensile increase in the stress of the film, regardless of the as-deposited stress of the film. In several instances, complete transformation of the A-15 structure into the bcc phase resulted in ge1 GPa tensile increase in film stress

  6. Microstructure evolution in nanoporous gold thin films made from sputter-deposited precursors

    International Nuclear Information System (INIS)

    Gwak, Eun-Ji; Kang, Na-Ri; Baek, Un Bong; Lee, Hae Moo; Nahm, Seung Hoon; Kim, Ju-Young

    2013-01-01

    We fabricate almost crack-free 1.5 μm thick nanoporous gold thin films using free-corrosion dealloying and transfer processes from sputter-deposited precursors. By controlling the temperature and the concentration of the nitric acid solution during free-corrosion dealloying, we obtain ligament sizes in nanoporous gold between 22 and 155 nm. We investigate the effects of dissolution rate of Ag atoms, surface diffusivity of Au atoms and formation of Ag oxide on nanoporosity evolution

  7. Fabrication of black-gold coatings by glancing angle deposition with sputtering

    Directory of Open Access Journals (Sweden)

    Alan Vitrey

    2017-02-01

    Full Text Available The fabrication of black-gold coatings using sputtering is reported here. Glancing angle deposition with a rotating substrate is needed to obtain vertical nanostructures. Enhanced light absorption is obtained in the samples prepared in the ballistic regime with high tilt angles. Under these conditions the diameter distribution of the nanostructures is centered at about 60 nm and the standard deviation is large enough to obtain black-metal behavior in the visible range.

  8. Advanced TiC/a-C: H nanocomposite coatings deposited by magnetron sputtering

    OpenAIRE

    Pei, Y.T.; Galvan, D.; Hosson, J.Th.M. De; Strondl, C.

    2006-01-01

    TiC/a-C:H nanocomposite coatings have been deposited by magnetron Sputtering. They consist of 2-5 nm TiC nanocrystallites embedded in the amorphous hydrocarbon (a-C:H) matrix. A transition from a Columnar to a glassy microstructure has been observed in the nanocomposite coatings with increasing substrate bias or carbon content. Micro-cracks induced by nanoindentation or wear tests readily propagate through the column boundaries whereas the coatings without a columnar inicrostructure exhibit s...

  9. Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

    Directory of Open Access Journals (Sweden)

    Chodun Rafal

    2015-12-01

    Full Text Available Encouraged by recent studies and considering the well-documented problems occurring during AlN synthesis, we have chosen two diagnostic methods which would enable us to fully control the process of synthesis and characterize the synthesized aluminum nitride films. In our experiment we have compared the results coming from OES measurements of plasma and circulating power characteristics of the power supply with basic features of the deposited layers. The dual magnetron system operating in AC mode was used in our studies. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of argon and nitrogen. The plasma emission spectra were measured with the use of a monochromator device. Analyses were made by comparing the positions and intensities of spectral lines of the plasma components. The results obtained allowed us to characterize the sputtering process under various conditions of gas mixture compositions as well as power distribution more precisely, which is reported in this work. The measured spectra were related to the deposition rate, the structure morphology of the films and chemical composition. Our work proved that the use of plasma OES and circulating power measurements make possible to control the process of sputtering and synthesis of deposited films in situ.

  10. HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2014-03-24

    Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si without HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.

  11. Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2

    International Nuclear Information System (INIS)

    Greene, J.E.

    1984-01-01

    The understanding of the physics of ion-surface interactions has progressed sufficiently to allow sputter depositinn to be used as a crystal growth technique for depositing a wide variety of single crystal elemental, compound, alloy, and superlattice semiconductors. In many cases, films with essentially bulk values of carrier concentrations and mobilities have been obtained. The controlled use of low energy particle bombardment of the growing film during sputter deposition has been shown to affect all stages of crystal growth ranging from adatom mobilities and nucleation kinetics to elemental incorporation probabilities. Such effects provide inherent advantages for sputter deposition over other vapor phase techniques for the low temperature growth of compound and alloy semiconductors and are essential in allowing the growth of new and unique single crystal metastable semiconductors. Part 1 of this review includes sections on experimental techniques, the physics of ion-surface interactions, and ion bombardment effects on film nucleation and growth, while Part 2 presents a discussion of recent results in the growth of elemental, III-V, II-VI, IV-VI, metastable, and other compound semiconductors

  12. Large-area few-layer MoS 2 deposited by sputtering

    KAUST Repository

    Huang, Jyun-Hong

    2016-06-06

    Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).

  13. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Salcedo, K L; Rodriguez, C A [Grupo Plasma Laser y Aplicaciones, Ingenieria Fisica, Universidad Tecnologica de Pereira (Colombia); Perez, F A [WNANO, West Virginia University (United States); Riascos, H [Grupo Plasma Laser y Aplicaciones, Departamento de Fisica, Universidad Tecnologica de Pereira (Colombia)

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al{sub 2}O{sub 3}) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  14. Morphological Study Of Palladium Thin Films Deposited By Sputtering

    International Nuclear Information System (INIS)

    Salcedo, K L; Rodriguez, C A; Perez, F A; Riascos, H

    2011-01-01

    This paper presents a morphological analysis of thin films of palladium (Pd) deposited on a substrate of sapphire (Al 2 O 3 ) at a constant pressure of 3.5 mbar at different substrate temperatures (473 K, 523 K and 573 K). The films were morphologically characterized by means of an Atomic Force Microscopy (AFM); finding a relation between the roughness and the temperature. A morphological analysis of the samples through AFM was carried out and the roughness was measured by simulating the X-ray reflectivity curve using GenX software. A direct relation between the experimental and simulation data of the Palladium thin films was found.

  15. Films deposited from reactive sputtering of aluminum acetylacetonate under low energy ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Battaglin, Felipe Augusto Darriba; Prado, Eduardo Silva; Cruz, Nilson Cristino da; Rangel, Elidiane Cipriano, E-mail: elidiane@sorocaba.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Caseli, Luciano [Universidade Federal de Sao Paulo (UNIFESP), Diadema, SP (Brazil). Instituto de Ciencias Ambientais, Quimicas e Farmaceuticas; Silva, Tiago Fiorini da; Tabacniks, Manfredo Harri [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

    2017-07-15

    Films were deposited from aluminum acetylacetonate (Al(acac)3 ) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction. (author)

  16. High power pulsed magnetron sputtering: A method to increase deposition rate

    International Nuclear Information System (INIS)

    Raman, Priya; McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-01-01

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed

  17. Low resistivity of Ni–Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

    Energy Technology Data Exchange (ETDEWEB)

    Lee, JongWoo [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Hui, K.N. [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Hui, K.S., E-mail: kshui@hanyang.ac.kr [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Cho, Y.R., E-mail: yescho@pusan.ac.kr [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Chun, Ho-Hwan [Global Core Research Center for Ships and Offshore Plants (GCRC-SOP), Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)

    2014-02-28

    Ni–Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV–vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10{sup −3} Ω cm with an optical transmittance of 90%.

  18. Sputter deposition and characterisation of hard wear-resistant Ti/TiN multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Simmonds, M.C.; Swygenhoven, H. van [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1997-09-01

    Multilayered Ti/TiN thin films have been synthesized by magnetron sputter deposition. Alternating layers of Ti and TiN with layer thickness in the 5-50 nm range are sequentially deposited. The structure of the films have been characterised by atomic force microscopy (AFM), X-ray diffraction and reflection and Auger depth profiling. The mechanical properties have been investigated using pin-on-disc wear rate testing, nanoindentation determination of hardness and micro scratch testing. (author) 1 fig., 3 refs.

  19. Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials

    International Nuclear Information System (INIS)

    Lee, Sanghun; Cheon, Dongkeun; Kim, Won-Jeong; Ham, Moon-Ho; Lee, Woong

    2012-01-01

    Ga-doped ZnO (GZO) transparent conductive oxide (TCO) films were deposited on glass substrates by pulsed DC magnetron sputtering with varying sputtering power and substrate temperature while fixing the Ga concentration in the sputtering target. The application of higher sputtering power by pulsed DC magnetrons sputtering at a moderate temperature of 423 K results in increased carrier concentration and mobility which accompanied improved doping efficiency and crystalline quality. Substrate temperature was found to be the more dominant parameter in controlling the electrical properties and crystallinity, while the sputtering power played synergistic auxiliary roles. Electrical and optical properties of the GZO TCO films fulfilled requirements for transparent electrodes, despite relatively low substrate temperature (423 K) and small thickness (100 nm). In an attempt to improve the electrical properties of the GZO films by hydrogen-treatment, it was observed that the substitutional Ga plays the complex role of carrier generator as donor and carrier suppressor deactivating the oxygen vacancy simultaneously, which would complicate the property improvement by increasing doping efficiency.

  20. Magnetic field effects on coating deposition rate and surface morphology coatings using magnetron sputtering

    International Nuclear Information System (INIS)

    Yang, Yu-Sen; Huang, Wesley

    2010-01-01

    Chromium nitride coatings exhibit superior hardness, excellent wear and oxidation resistance, and are widely applied in the die and mold industries. The aim of this study was to investigate magnetic field effects on the deposition rate and surface morphology of chromium nitride coatings deposited by magnetron sputtering. Four types of magnetic field configurations, including the magnetron sputtering system, SNSN, SNNN, and intermediate magnetron modification, are discussed in this paper. SKD11 cold work die steel and a silicon (100) chip were used as substrates in the chromium nitride depositions. The process parameters, such as target current, substrate bias, and the distance between the substrate and target, are at fixed conditions, except for the magnetic arrangement type. The experimental results showed that the deposition rates of the four types of magnetic field configurations were 1.06, 1.38, 1.67 and 1.26 µm h −1 , respectively. In these cases, the SNNN type performs more than 58% faster than the unbalanced magnetron configuration does for the deposition rate. The surface morphology of chromium nitride films was also examined by SEM and is discussed in this paper

  1. Turbostratic-like carbon nitride coatings deposited by industrial-scale direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Louring, S.; Madsen, N.D.; Berthelsen, A.N.; Christensen, B.H.; Almtoft, K.P.; Nielsen, L.P.; Bøttiger, J.

    2013-01-01

    Carbon nitride thin films were deposited by direct current magnetron sputtering in an industrial-scale equipment at different deposition temperatures and substrate bias voltages. The films had N/(N + C) atomic fractions between 0.2 and 0.3 as determined by X-ray photoelectron spectroscopy (XPS). Raman spectroscopy provided insight into the ordering and extension of the graphite-like clusters, whereas nanoindentation revealed information on the mechanical properties of the films. The internal compressive film stress was evaluated from the substrate bending method. At low deposition temperatures the films were amorphous, whereas the film deposited at approximately 380 °C had a turbostratic-like structure as confirmed by high-resolution transmission electron microscopy images. The turbostratic-like film had a highly elastic response when subjected to nanoindentation. When a CrN interlayer was deposited between the film and the substrate, XPS and Raman spectroscopy indicated that the turbostratic-like structure was maintained. However, it was inconclusive whether the film still exhibited an extraordinary elastic recovery. An increased substrate bias voltage, without additional heating and without deposition of an interlayer, resulted in a structural ordering, although not to the extent of a turbostratic-like structure. - Highlights: • Carbon nitride films were deposited by industrial-scale magnetron sputtering. • The deposition temperature and the substrate bias voltage were varied. • A turbostratic-like structure was obtained at an elevated deposition temperature. • The turbostratic-like film exhibited a very high elastic recovery. • The influence of a CrN interlayer on the film properties was investigated

  2. Deuterium trapping in tungsten deposition layers formed by deuterium plasma sputtering

    International Nuclear Information System (INIS)

    Alimov, V.Kh.; Roth, J.; Shu, W.M.; Komarov, D.A.; Isobe, K.; Yamanishi, T.

    2010-01-01

    A study of the influence of the deposition conditions on the surface morphology and deuterium (D) concentration in tungsten (W) deposition layers formed by magnetron sputtering and in the linear plasma generator has been carried out. Thick W layers (≥0.4 μm) deposited onto copper substrates demonstrate areas of pilling and, after post-deposition heating to 1300 K, flaking-off and fracturing. For thin W layers (≤80 nm) deposited onto stainless steel (SS) and W substrates, no areas of flaking-off and fracturing exist both after deposition and after post-deposition heating to 673 K for the SS substrate and to 1300 K for the W substrate. The concentration of deuterium in the W layers was found to decrease with increasing substrate temperature and with increasing tungsten deposition rate. For layers with relatively high concentration of oxygen (0.20-0.60 O/W), a decrease of the D concentration with increasing substrate temperature is more pronounced than that for layers deposited in good vacuum conditions. To describe the evolution of the D/W ratio with the substrate temperature and the tungsten deposition rate, an empirical equation proposed by De Temmerman and Doerner [J. Nucl. Mater. 389 (2009) 479] but with alternative parameters has been used.

  3. Vacuum Pumping Performance Comparison of Non-Evaporable Getter Thin Films Deposited Using Argon and Krypton as Sputtering Gases

    CERN Document Server

    Liu, Xianghong; He, Yun; Li, Yulin

    2005-01-01

    Owing to the outstanding vacuum performance and the low secondary electron yield, non-evaporable getter (NEG) thin film deposited onto interior walls has gained widespread acceptance and has been incorporated into many accelerator vacuum system designs. The titanium-zirconium-vanadium (T-Zr-V) NEG thin films were deposited onto the interior wall of stainless steel pipes via DC magnetron sputtering method using either argon or krypton gas as sputtering gas. Vacuum pumping evaluation tests were carried out to compare vacuum pumping performances of the Ti-Zr-V NEG thin films deposited using argon or krypton. The results showed much higher initial pumping speed for the Kr-sputtered NEG film than the Ar-sputtered film, though both films have similar activation behavior. The compositions and textures of both thin films were measured to correlate to the pumping performances.

  4. Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

    CERN Document Server

    Seino, T

    2002-01-01

    The reactive pulsed dc sputtering technique is widely used for the deposition of oxide films. The operating pressure for sputtering is commonly above 0.13 Pa. In this study, however, aluminum oxide (alumina) films were deposited at operating pressures from 0.06 to 0.4 Pa using a sputtering system equipped with a scanning magnetron cathode and a pulsed dc power supply. The pulsed dc power was found to be useful not only to reduce arcing, but also to sustain the discharge at low pressure. The electrical breakdown field, intrinsic stress, O/Al ratio, refractive index, and surface roughness were investigated. Both a low intrinsic stress and an O/Al ratio around the stoichiometry were required to get the film having a high breakdown field. A low operating pressure of 0.1 Pa was found to provide the necessary stress and O/Al ratio targets. A 50-nm-thick alumina film having a maximum breakdown field of 7.4 MV/cm was obtained.

  5. Shape memory characteristics of sputter-deposited Ti-Ni thin films

    International Nuclear Information System (INIS)

    Miyazaki, Shuichi; Ishida, Akira.

    1994-01-01

    Ti-Ni shape memory alloy thin films were deposited using an RF magnetron sputtering apparatus. The as-sputtered films were heat-treated in order to crystallize and memorize. After the heat treatment, the shape memory characteristics have been investigated using DSC and thermomechanical tests. Upon cooling the thin films, the solution-treated films showed a single peak in the DSC curve indicating a single stage transformation occurring from B2 to the martensitic phase, while the age-treated films showed double peaks indicating a two-stage transformation, i.e., from B2 to the R-phase, then to the martensitic phase. A perfect shape memory effect was achieved in these sputter-deposited Ti-Ni thin films in association both with the R-phase and martensitic transformations. Transformation temperatures increased linearly with increasing applied stress. The transformation strain also increased with increasing stress. The shape memory characteristics were strongly affected by heat-treatment conditions. (author)

  6. Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

    Science.gov (United States)

    Lei, Hao; Wang, Meihan; Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka

    2013-11-01

    Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

  7. Comparative studies on damages to organic layer during the deposition of ITO films by various sputtering methods

    Energy Technology Data Exchange (ETDEWEB)

    Lei, Hao, E-mail: haolei@imr.ac.cn [State Key Laboratory for Corrosion and Protection, Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Wang, Meihan [College of Mechanical Engineering, Shenyang University, Shenyang 110044 (China); Hoshi, Yoichi; Uchida, Takayuki; Kobayashi, Shinichi; Sawada, Yutaka [Center for Hyper Media Research, Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297 (Japan)

    2013-11-15

    Aluminum (III) bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq) was respectively bombarded and irradiated by Ar ions, oxygen ions, electron beam and ultraviolet light to confirm damages during the sputter-deposition of transparent conductive oxide (TCO) on organic layer. The degree of damage was evaluated by the photoluminescence (PL) spectra of BAlq. The results confirmed the oxygen ions led to a larger damage and were thought to play the double roles of bombardment to organic layer and reaction with organic layer as well. The comparative studies on PL spectra of BAlq after the deposition of TCO films by various sputtering systems, such as conventional magnetron sputtering (MS), low voltage sputtering (LVS) and kinetic-energy-control-deposition (KECD) system, facing target sputtering (FTS) were performed. Relative to MS, LVS and KECD system, FTS can completely suppress the bombardment of the secondary electrons and oxygen negative ions, and keep a higher deposition rate simultaneously, thus it is a good solution to attain a low-damage sputter-deposition.

  8. Thermochromic VO2 thin films deposited by magnetron sputtering for smart window applications

    Science.gov (United States)

    Fortier, Jean-Philippe

    "Smart" windows are a perfect innovative example of technology that reduces our energy dependence and our impact on the environment while saving on the economical point of view. With the use of vanadium dioxide (VO2), a thermochromic compound, and this, as a thin coating, it would in fact be possible to control the sun's transmission of infrared light (heat) as a function of the surrounding environment temperature. In other words, its optical behavior would allow a more effective management of heat exchanges between a living venue and the outdoor environment. However, this type of window is still in a developmental stage. First, the oxide's deposition is not simple in nature. Based on a conventional deposition technique called magnetron sputtering mainly used in the fenestration industry, several factors such as the oxygen concentration and the substrate temperature during deposition can affect the coating's thermochromic behavior, and this, by changing its composition and crystallinity. Other control parameters such as the deposition rate, the pressure in the sputtering chamber and the choice of substrate may also modify the film microstructure, thereby varying its optical and electrical properties. In addition, several issues still persist as to its commercial application. For starters, the material's structural transition, related to the change of its optical properties, only occurs around 68°C. In addition, its low transparency and natural greenish colour are not visually appealing. Then, to this day, the deposition temperature required to crystallize and form the thermochromic oxide remains an obstacle for a possible large-scale application. Ultimately, although the material's change in temperature has been shown to be advantageous in situations of varying climate, the existing corrective solutions to these issues generate a deterioration of the thermochromic behavior. With no practical expertise on the material, this project was undertaken with certain

  9. Understanding deposition rate loss in high power impulse magnetron sputtering: I. Ionization-driven electric fields

    International Nuclear Information System (INIS)

    Brenning, N; Huo, C; Raadu, M A; Lundin, D; Helmersson, U; Vitelaru, C; Stancu, G D; Minea, T

    2012-01-01

    The lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared with direct current magnetron sputtering for the same average power is often reported as a drawback. The often invoked reason is back-attraction of ionized sputtered material to the target due to a substantial negative potential profile, sometimes called an extended presheath, from the location of ionization toward the cathode. Recent studies in HiPIMS devices, using floating-emitting and swept-Langmuir probes, show that such extended potential profiles do exist, and that the electric fields E z directed toward the target can be strong enough to seriously reduce ion transport to the substrate. However, they also show that the potential drops involved can vary by up to an order of magnitude from case to case. There is a clear need to understand the underlying mechanisms and identify the key discharge variables that can be used for minimizing the back-attraction. We here present a combined theoretical and experimental analysis of the problem of electric fields E z in the ionization region part of HiPIMS discharges, and their effect on the transport of ionized sputtered material. In particular, we have investigated the possibility of a ‘sweet spot’ in parameter space in which the back-attraction of ionized sputtered material is low. It is concluded that a sweet spot might possibly exist for some carefully optimized discharges, but probably in a rather narrow window of parameters. As a measure of how far a discharge is from such a window, a Townsend product Π Townsend is proposed. A parametric analysis of Π Townsend shows that the search for a sweet spot is complicated by the fact that contradictory demands appear for several of the externally controllable parameters such as high/low working gas pressure, short/long pulse length, high/low pulse power and high/low magnetic field strength. (paper)

  10. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Basudev, E-mail: swain@iae.re.kr [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Mishra, Chinmayee [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of); Hong, Hyun Seon [Sungshin University, Dept. of Interdisciplinary ECO Science, Seoul, 142-732 (Korea, Republic of); Cho, Sung-Soo [Institute for Advanced Engineering, Advanced Materials & Processing Center, Yongin, 449-863 (Korea, Republic of)

    2016-05-15

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m{sup 3} of copper and 1.35 kg/m{sup 3} of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching

  11. Selective recovery of pure copper nanopowder from indium-tin-oxide etching wastewater by various wet chemical reduction process: Understanding their chemistry and comparisons of sustainable valorization processes

    International Nuclear Information System (INIS)

    Swain, Basudev; Mishra, Chinmayee; Hong, Hyun Seon; Cho, Sung-Soo

    2016-01-01

    Sustainable valorization processes for selective recovery of pure copper nanopowder from Indium-Tin-Oxide (ITO) etching wastewater by various wet chemical reduction processes, their chemistry has been investigated and compared. After the indium recovery by solvent extraction from ITO etching wastewater, the same is also an environmental challenge, needs to be treated before disposal. After the indium recovery, ITO etching wastewater contains 6.11 kg/m 3 of copper and 1.35 kg/m 3 of aluminum, pH of the solution is very low converging to 0 and contain a significant amount of chlorine in the media. In this study, pure copper nanopowder was recovered using various reducing reagents by wet chemical reduction and characterized. Different reducing agents like a metallic, an inorganic acid and an organic acid were used to understand reduction behavior of copper in the presence of aluminum in a strong chloride medium of the ITO etching wastewater. The effect of a polymer surfactant Polyvinylpyrrolidone (PVP), which was included to prevent aggregation, to provide dispersion stability and control the size of copper nanopowder was investigated and compared. The developed copper nanopowder recovery techniques are techno-economical feasible processes for commercial production of copper nanopowder in the range of 100–500 nm size from the reported facilities through a one-pot synthesis. By all the process reported pure copper nanopowder can be recovered with>99% efficiency. After the copper recovery, copper concentration in the wastewater reduced to acceptable limit recommended by WHO for wastewater disposal. The process is not only beneficial for recycling of copper, but also helps to address environment challenged posed by ITO etching wastewater. From a complex wastewater, synthesis of pure copper nanopowder using various wet chemical reduction route and their comparison is the novelty of this recovery process. - Highlights: • From the Indium-Tin-Oxide etching wastewater

  12. Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering

    Science.gov (United States)

    Senol, Abdulkadir; Gulen, Mahir; Yildirim, Gurcan; Ozturk, Ozgur; Varilci, Ahmet; Terzioglu, Cabir; Belenli, Ibrahim

    2013-03-01

    In this study, we investigate the effect of annealing temperature on electrical, optical and microstructural properties of indium tin oxide (ITO) films deposited onto Soda lime glass substrates by conventional direct current (DC) magnetron reactive sputtering technique at 100 watt using an ITO ceramic target (In2O3:SnO2, 90:10 wt. %) in argon atmosphere at room temperature. The films obtained are exposed to the calcination process at different temperature up to 700 ° C. Resistivity, Hall Effect, X-ray diffractometer (XRD), ultra violet-visible spectrometer (UV-vis) and atomic force microscopy (AFM) measurements are performed to characterize the samples. Moreover, phase purity, surface morphology, optical and photocatalytic properties of the films are compared with each other. Furthermore, mobility, carrier density and conductivity characteristics of the samples prepared are carried out as function of temperature in the range of 80-300 K at the magnetic field of 0.550 T. The results obtained show that all the properties depend strongly on the annealing temperature and in fact the film annealed at 400 ° C obtains the better optical properties due to the high refractive index while the film produced at 100 °C exhibits much better photoactivity than the other films as a result of the large optical energy band gap.

  13. Microstructure of thin film platinum electrodes on yttrium stabilized zirconia prepared by sputter