Conductivity and optical studies of plasticized solid polymer electrolytes doped with carbon nanotube

International Nuclear Information System (INIS)

Ibrahim, Suriani; Ahmad, Roslina; Johan, Mohd Rafie

2012-01-01

Solid polymer electrolyte films based on Poly(ethylene oxide) (PEO) complexed with lithium hexafluorophosphate (LiPF 6 ), ethylene carbonate (EC) and amorphous carbon nanotube (αCNTs) were prepared by the solution cast technique. The conductivity increases from 10 -10 to 10 -5 Scm -1 upon the addition of salt. The incorporation of EC and αCNTs to the salted polymer enhances the conductivity significantly to 10 -4 and 10 -3 Scm -1 . The complexation of doping materials with polymer were confirmed by X-ray diffraction and infrared studies. Optical properties like direct band gap and indirect band gap were investigated for pure and doped polymer films in the wavelength range 200-400 nm. It was found that the energy gaps and band edge values shifted to lower energies on doping. - Highlights: → Optical band gap values show the decreasing trend with an increasing dopant concentration. → It is also observed that the absorption edge shifted to longer wavelength on doping. → Results of the optical measurements indicate the presence of a well-defined π→π* transition associated with the formation of a conjugated C=O and/or C=O electronic structure.

Linearly and circularly polarized laser photoinduced molecular order in azo dye doped polymer films

Directory of Open Access Journals (Sweden)

Saad Bendaoud

2017-01-01

Full Text Available Photo-induced behavior of Azo Disperse one (AZD1 doped Poly(Methyl MethAcrylate (PMMA using both linear and circular polarized light is studied. The anisotropy is not erased by the circular polarization light. The circular polarization light combined with relatively long lifetime of the cis state in azo dye doped polymers activate all transverse directions of the angular hole burning through the spot in the film inducing anisotropy. Under circular polarized light, there is no orientation perpendicularly to the helex described by the rotating electric field vector, trans molecules reorients in the propagation direction of the pump beam. The polarization state of the probe beam after propagation through the pumped spot depends strongly on the angle of incidence of both pump and probe beams on the input face. In the case where circular polarized pump and probe beams are under the same angle of incidence, the probe beam “sees” anisotropic film as if it is isotropic. Results of this work shows the possibility to reorient azobenzene-type molecules in two orthogonal directions using alternately linearly and circularly polarized beams.

Synthesis and computer-aided structural investigation of potentially photochromic spirooxazines

International Nuclear Information System (INIS)

Chi, L.

2000-03-01

Quantum mechanical methods, PPP-MO and ZINDO, were used to predict the electronic spectra of the ring-opened forms and ring-closed forms respectively of a series of spirooxazines. Molecular mechanics was used to optimise the molecular geometry and to calculate the molecular final energy (steric energy) using the MM2 force field method. An all-valence-electron quantum mechanical method was employed to calculate the heats of formation using AM1 parameters, and the data were used to provide a measure of the stability of the molecules. This computer-aided structural investigation has provided an enhanced understanding of the spirooxazine system and methods with the potential to predict photochromic behaviour have emerged. The synthesis of a series of heterocyclic analogues of the well-known spironaphthoxazines based on quinolines, coumarin and pyrazolones were attempted. The properties of the compounds obtained were correlated with the results of the calculations. (author)

[Effect of annealing temperature on the crystallization and spectroscopic response of a small-molecule semiconductor doped in polymer film].

Science.gov (United States)

Yin, Ming; Zhang, Xin-Ping; Liu, Hong-Mei

2012-11-01

The crystallization properties of the perylene (EPPTC) molecules doped in the solid film of the derivative of polyfluorene (F8BT) at different annealing temperatures, as well as the consequently induced spectroscopic response of the exciplex emission in the heterojunction structures, were studied in the present paper. Experimental results showed that the phase separation between the small and the polymer molecules in the blend film is enhanced with increasing the annealing temperature, which leads to the crystallization of the EPPTC molecules due to the strong pi-pi stacking. The size of the crystal phase increases with increasing the annealing temperature. However, this process weakens the mechanisms of the heterojunction configuration, thus, the total interfacial area between the small and the polymer molecules and the amount of exciplex are reduced significantly in the blend film. Meanwhile, the energy transfer from the polymer to the small molecules is also reduced. As a result, the emission from the exciplex becomes weaker with increasing the annealing temperature, whereas the stronger emission from the polymer molecules and from the crystal phase of the small molecules can be observed. These experimental results are very important for understanding and tailoring the organic heterojunction structures. Furthermore, this provides photophysics for improving the performance of photovoltaic or solar cell devices.

Modification of fluorescence and optical properties of Rhodamine B dye doped PVA/Chitosan polymer blend films

Science.gov (United States)

Padmakumari, R.; Ravindrachary, V.; Mahantesha, B. K.; Sagar, Rohan N.; Sahanakumari, R.; Bhajantri, R. F.

2018-05-01

Pure and Rhodamine B doped Poly (vinyl alcohol)/Chitosan composite films are prepared using solution casting method. Fourier transforms infrared spectra (FTIR), Ultraviolet-Visible (UV-Vis), fluorescence studies were used to characterize the prepared polymer films. The FT-IR results show that the appearance of new peaks along with shift in peak positions indicates the interaction of Rhodamine B with PVA-CS blend. Optical absorption edge, band gap and activation energy were determined from UV-Visible studies. The optical absorption edge increases, band gap decreases and activation energy increases with dopant concentration respectively. The corresponding emission spectra were studied using fluorescence spectroscopy. From the fluorescence study the quenching phenomena are observed in emission wavelength range of 607nm-613nm upon excitation with absorption maxima 443nm.

Refractive index modulation in polymer film doped with diazo Meldrum's acid

Science.gov (United States)

Zanutta, Alessio; Villa, Filippo; Bertarelli, Chiara; Bianco, Andrea

2016-08-01

Diazo Meldrum's acid undergoes a photoreaction induced by UV light and it is used as photosensitizer in photoresists. Upon photoreaction, a change in refractive index occurs, which makes this system interesting for volume holography. We report on the sublimation effect at room temperature and the effect of photoirradiation on the refractive index in thin films of CAB (Cellulose acetate butyrate) doped with different amount of diazo Meldrum's acid. A net modulation of the refractive index of 0.01 is achieved with 40% of doping ratio together with a reduction of the film thickness.

Study of optical properties of Erbium doped Tellurite glass-polymer composite

Science.gov (United States)

Sushama, D.

2014-10-01

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er2O3 doped TeO2-WO3-La2O3 Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption.

Dichroic dye-dependent studies in guest-host polymer-dispersed liquid crystal films

Energy Technology Data Exchange (ETDEWEB)

Malik, Praveen, E-mail: pmalik100@yahoo.co [Department of Physics, Dr. B.R. Ambedkar National Institute of Technology, Jalandhar 144011, Punjab (India); Raina, K.K. [Liquid Crystal Group, Materials Research Laboratory, School of Physics and Materials Science, Thapar University, Patiala 147004, Punjab (India)

2010-01-01

Guest-host polymer-dispersed liquid crystal (GHPDLC) films were prepared using a nematic liquid crystal, photo-curable polymer and dichroic dye (anthraquinone blue) by polymerization-induced phase separation (PIPS) technique. Non-ionic dichroic dye (1%, 2% and 4% wt./wt. ratio) was taken as guest in PDLC host. Polarizing microscopy shows that in the absence of electric field, liquid crystal (LC) droplets in polymer matrix mainly exhibit bipolar configuration, however, relatively at higher field, maltese-type crosses were observed. Our results show that approx1% dye-doped PDLC film shows better transmission and faster response times over pure polymer-dispersed nematic liquid crystal (PDNLC) and higher concentrated (2% and 4%) GHPDLC films.

Dichroic dye-dependent studies in guest-host polymer-dispersed liquid crystal films

International Nuclear Information System (INIS)

Malik, Praveen; Raina, K.K.

2010-01-01

Guest-host polymer-dispersed liquid crystal (GHPDLC) films were prepared using a nematic liquid crystal, photo-curable polymer and dichroic dye (anthraquinone blue) by polymerization-induced phase separation (PIPS) technique. Non-ionic dichroic dye (1%, 2% and 4% wt./wt. ratio) was taken as guest in PDLC host. Polarizing microscopy shows that in the absence of electric field, liquid crystal (LC) droplets in polymer matrix mainly exhibit bipolar configuration, however, relatively at higher field, maltese-type crosses were observed. Our results show that ∼1% dye-doped PDLC film shows better transmission and faster response times over pure polymer-dispersed nematic liquid crystal (PDNLC) and higher concentrated (2% and 4%) GHPDLC films.

A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

KAUST Repository

Kiefer, David; Yu, Liyang; Fransson, Erik; Gó mez, André s; Primetzhofer, Daniel; Amassian, Aram; Campoy-Quiles, Mariano; Mü ller, Christian

2016-01-01

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

KAUST Repository

Kiefer, David

2016-09-01

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

Study of optical properties of Erbium doped Tellurite glass-polymer composite

Energy Technology Data Exchange (ETDEWEB)

Sushama, D., E-mail: sushasukumar@gmail.com [Research Awardee, LAMP, Dept. of Physics, Nit, Calicut, India and Dept. of Physics, M.S.M. College, Kayamkulam, Kerala (India)

2014-10-15

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er{sub 2}O{sub 3} doped TeO{sub 2}‐WO{sub 3}‐La{sub 2}O{sub 3} Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption.

Study of optical properties of Erbium doped Tellurite glass-polymer composite

International Nuclear Information System (INIS)

Sushama, D.

2014-01-01

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er 2 O 3 doped TeO 2 ‐WO 3 ‐La 2 O 3 Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption

Structural and Electrical Properties of Graphene Oxide-Doped PVA/PVP Blend Nanocomposite Polymer Films

Directory of Open Access Journals (Sweden)

S. K. Shahenoor Basha

2018-01-01

Full Text Available Graphene oxide (GO nanoparticles were incorporated in PVA/PVP blend polymers for the preparation of nanocomposite polymer films by the solution cast technique. XRD, FTIR, DSC, SEM, and UV-visible studies were performed on the prepared nanocomposite polymer films. XRD revealed the amorphous nature of the prepared films. Thermal analysis of the nanocomposite polymer films was analyzed by DSC. SEM revealed the morphological features and the degree of roughness of the samples. DC conductivity studies were under taken on the samples, and the conductivity was found to be 6.13 × 10−4 S·cm−1 for the polymer film prepared at room temperature. A solid-state battery has been fabricated with the chemical composition of Mg+/(PVA/PVP  :  GO/(I2 + C + electrolyte, and its cell parameters like power density and current density were calculated.

High stability of polymer optical fiber with dye doped cladding for illumination systems

Energy Technology Data Exchange (ETDEWEB)

Jaramillo-Ochoa, L. [Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Boulevard Juriquilla 3001, Querétaro 76230, México (Mexico); Narro-García, R. [Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Boulevard Juriquilla 3001, Querétaro 76230, México (Mexico); Universidad Autónoma de Chihuahua, Facultad de Ingeniería, Circuito Universitario S/N, 31125 Chihuahua, Chih., México (Mexico); Ocampo, M.A. [Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Boulevard Juriquilla 3001, Querétaro 76230, México (Mexico); Quintero-Torres, R., E-mail: rquintero@fata.unam.mx [Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, Boulevard Juriquilla 3001, Querétaro 76230, México (Mexico)

2017-04-15

In this work, the photodegradation of a polymer optical fiber with Rhodamine doped cladding as a function of illumination time and excitation intensity is presented. To show the effect of photodegradation on different bulk geometries and environments, the photodegradation from a dye doped preform and a PMMA thick film is also evaluated. The reversible and the irreversible degradation of the florescent material were quantified under an established excitation scheme. To this purpose, a four-level system to model the photodegradation rates and its relation with the population of the states is presented and it is used to justify a possible underlying mechanism. The obtained results suggest an increase of one order of magnitude in the stability (lifetime) of the polymer optical fiber with respect to the preform or the thick film geometry stability.

Fluorescence lifetime, dipole orientation and bilayer polymer films

Science.gov (United States)

Ho, Xuan Long; Chen, Po-Jui; Woon, Wei-Yen; White, Jonathon David

2017-10-01

Bilayer films consisting of the optically transparent polymers, polystyrene (PS) and poly(methyl methacrylate) (PMMA) were spin-cast on glass substrates. The upper 13.5 nm layer (PS) was lightly doped with Rhodamine-6 G (RH6G) or MEH-PPV. While the fluorescence of MEH-PPV was independent of PMMA thickness, the lifetime of RH6G increased 3-fold as the underlying PMMA thickness increased from 0 to 500 nm while the collected flux decreased suggesting a reorientation of the smaller molecule's dipole with respect to the air-polymer interface with PMMA thickness. This suggests lifetime may find application for nondestructive thickness measurements of transparent films with sub-micron lateral resolution and large range.

Asymmetrically doped one-dimensional trans-polymers

International Nuclear Information System (INIS)

Caldas, Heron

2009-01-01

More than 30 years ago [H. Shirakawa, E.J. Louis, A.G. MacDiarmid, C.K. Chiang, A.J. Heeger, J. Chem. Soc. Chem. Comm. 578 (1977); S. Etemad, A.J. Heeger, Ann. Rev. Phys. Chem. 33 (1982) 443] it was discovered that doped trans-polyacetylene (CH) x , a one-dimensional (1D) conjugated polymer, exhibits electrical conductivity. In this work we show that an asymmetrically doped 1D trans-polymer has non-conventional properties, as compared to symmetrically doped systems. Depending on the level of asymmetry between the chemical potentials of the two involved fermionic species, the polymer can be in a partially or fully spin polarized state. Some possible experimental consequences of doped 1D trans-polymers used as 1D organic polarized conductors are discussed.

Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

Energy Technology Data Exchange (ETDEWEB)

Liu, Xiaoqiang, E-mail: lxq_suse@sina.com [Material Corrosion and Protection Key Laboratory of Sichuan province, Sichuan University of Science and Engineering, Zigong 643000 (China); Hao, Junying, E-mail: jyhao@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Xie, Yuntao [Material Corrosion and Protection Key Laboratory of Sichuan province, Sichuan University of Science and Engineering, Zigong 643000 (China)

2016-08-30

Highlights: • Evolution of nanostructure and properties of the polymeric amorphous carbon films were firstly studied. • Si doping enhanced polymerization of the hydrocarbon chains and Al doping resulted in increase in the ordered carbon clusters of polymeric amorphous carbon films. • Soft polymeric amorphous carbon films exhibited an unconventional frictional behaviors with a superior wear resistance. • The mechanical and vacuum tribological properties of the polymeric amorphous carbon films were significantly improved by Si and Al co-doping. - Abstract: Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

Photoluminescence Spectroscopy of Rhodamine 800 Aqueous Solution and Dye-Doped Polymer Thin-Film: Concentration and Solvent Effects

Science.gov (United States)

Le, Khai Q.; Dang, Ngo Hai

2018-05-01

This paper investigates solvent and concentration effects on photoluminescence (PL) or fluorescence properties of Rhodamine 800 (Rho800) dyes formed in aqueous solution and polymer thin-film. Various commonly used organic solvents including ethanol, methanol and cyclopentanol were studied at a constant dye concentration. There were small changes in the PL spectra for the different solvents in terms of PL intensity and peak wavelength. The highest PL intensity was observed for cyclopentanol and the lowest for ethanol. The longest peak wavelength was found in cyclopentanol (716 nm) and the shortest in methanol (708 nm). Dissolving the dye powder in the methanol solvent and varying the dye concentration in aqueous solution from the high concentrated solution to highly dilute states, the wavelength tunability was observed between about 700 nm in the dilute state and 730 nm at high concentration. Such a large shift may be attributed to the formation of dye aggregates. Rho800 dye-doped polyvinyl alcohol (PVA) polymer thin-film was further investigated. The PL intensity of the dye in the form of thin-film is lower than that of the aqueous solution form whereas the peak wavelength is redshifted due to the presence of PVA. This paper, to our best knowledge, reports the first study of spectroscopic properties of Rho800 dyes in various forms and provides useful guidelines for production of controllable organic luminescence sources.

Effects of pentacene-doped PEDOT:PSS as a hole-conducting layer on the performance characteristics of polymer photovoltaic cells

OpenAIRE

Kim, Hyunsoo; Lee, Jungrae; Ok, Sunseong; Choe, Youngson

2012-01-01

We have investigated the effect of pentacene-doped poly(3,4-ethylenedioxythiophene:poly(4-styrenesulfonate) [PEDOT:PSS] films as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the amount of pentacene and the annealing temperature of pentacene-doped PEDOT:PSS layer, the changes of performance characteristics were evaluated. Pentacene-doped PEDOT:PSS thin films were prepared by dissolving pentacene in 1-methyl-2-pyrrolidinone solvent and mixing with PEDO...

Photoluminescent study of Polycarbonate (PC) and Poly(9-vinylcarbazole) (PVK) doped films with europium complex

International Nuclear Information System (INIS)

Forster, Pedro Lima

2010-01-01

Polymers doped with rare earth complexes are advantaged in film production for many applications in the luminescent field. In this study luminescent polymer obtained from polycarbonate (PC) and poly(9-vinylcarbazole) films doped with diaquatris(thenoyltrifluoroacetonate)europium(III) complex [Eu(tta) 3 (H 2 0) 2 ] were prepared and their calorimetric and luminescent properties in the solid state are reported. The thermal behavior was investigated by differential scanning calorimetry (OSC) and thermogravimetry analysis (TGA). Due of the addition of rare earth Eu(tta) 3 (H 2 0) 2 ] into PC and PVK matrices, changes were observed in the thermal behavior concerning the glass transition and thermal stability. Characteristic broadened narrow bands arising from the 5 D 0 -→ 7 F J transitions (J = 0-4) of Eu 3+ ion indicate the incorporation of the Eu 3+ ions into those polymers. The luminescent films show enhancement emission intensity with an increase in the rare earth concentration in polymeric matrix accompanied by decrease in thermal stability. (author)

Micro-orientation control of silicon polymer thin films on graphite surfaces modified by heteroatom doping

Energy Technology Data Exchange (ETDEWEB)

Shimoyama, Iwao, E-mail: shimoyama.iwao@jaea.go.jp [Material Science Research Center, Atomic Energy Agency, Tokai-mura 2-4, Naka-gun, Ibaraki 319-1195 (Japan); Baba, Yuji [Fukushima Administrative Department, Atomic Energy Agency, Tokai-mura 2-4, Naka-gun, Ibaraki 319-1195 (Japan); Hirao, Norie [Material Science Research Center, Atomic Energy Agency, Tokai-mura 2-4, Naka-gun, Ibaraki 319-1195 (Japan)

2017-05-31

Highlights: • Micro-orientation control method for organic polysilane thin films is proposed. • This method utilizes surface modification of graphite using heteroatom doping. • Lying, standing, and random orientations can be freely controlled by this method. • Micro-pattering of a polysilane film with controlled orientations is achieved. - Abstract: Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy is applied to study orientation structures of polydimethylsilane (PDMS) films deposited on heteroatom-doped graphite substrates prepared by ion beam doping. The Si K-edge NEXAFS spectra of PDMS show opposite trends of polarization dependence for non irradiated and N{sub 2}{sup +}-irradiated substrates, and show no polarization dependence for an Ar{sup +}-irradiated substrate. Based on a theoretical interpretation of the NEXAFS spectra via first-principles calculations, we clarify that PDMS films have lying, standing, and random orientations on the non irradiated, N{sub 2}{sup +}-irradiated, and Ar{sup +}-irradiated substrates, respectively. Furthermore, photoemission electron microscopy indicates that the orientation of a PDMS film can be controlled with microstructures on the order of μm by separating irradiated and non irradiated areas on the graphite surface. These results suggest that surface modification of graphite using ion beam doping is useful for micro-orientation control of organic thin films.

Enhanced flux pinning properties in superconducting YBa2Cu3O7−z films by a novel chemical doping approach

International Nuclear Information System (INIS)

Wang, W.T.; Pu, M.H.; Lei, M.; Zhang, H.; Wang, Z.; Zhang, H.; Cheng, C.H.; Zhao, Y.

2013-01-01

Highlights: • Pure and Co-doped YBCO films were prepared by newly-developed chemical method. • The doped films have much denser and smoother surface microstructures. • Significantly enhanced fux-pinning properties have been obtained for dilute Co-doped flm. -- Abstract: Pure and cobalt-doped superconducting YBa 2 Cu 3 O 7−z (YBCO) films were prepared on (0 0 l) LaAlO 3 substrate by a newly developed polymer-assisted metal organic deposition method. The cobalt-doped YBCO films display much denser and smoother surface microstructures and the superconducting transition temperature T c spans a small range of 1.7 K with the doping levels. Significantly enhanced flux-pinning properties have been obtained for dilute cobalt-doped film. This may be attributed to the good grain connections and the effective flux pinning centers introduced by cobalt doping

Fabrication of reduced graphene oxide nanosheets doped PVA composite films for tailoring their opto-mechanical properties

Science.gov (United States)

Aslam, Muhammad; Kalyar, Mazhar Ali; Raza, Zulfiqar Ali

2017-06-01

Laminar graphene nanosheets have raised passionate attention due to their incredible physico-chemical properties. Its wide-scale, high-yield production at low-cost has made it possible to produce top class promising versatile polymer nanocomposites. Reduced graphene oxide (RGO) nanosheets were incorporated to prepare optically tunable and high mechanical strength polymer nanocomposite films. RGO-doped poly(vinyl alcohol) (PVA) nanocomposite films were prepared via solution casting. Low level RGO doping significantly altered the structural, optical and mechanical properties of pure PVA films. Most of the band structure parameters like direct/indirect band gap, band tail, refractive index, dielectric constant, optical conductivity and dispersion parameters were investigated in detail for the first time. Tauc's, Wemple-DiDomenico, Helpin-Tsai and mixture rule models were employed to investigate optical and mechanical parameters. The applied models reinforced the experimental results in the present study. Advanced analytical techniques were engaged to characterize the nanocomposites films.

Water-Enabled Healing of Conducting Polymer Films.

Science.gov (United States)

Zhang, Shiming; Cicoira, Fabio

2017-10-01

The conducting polymer polyethylenedioxythiophene doped with polystyrene sulfonate (PEDOT:PSS) has become one of the most successful organic conductive materials due to its high air stability, high electrical conductivity, and biocompatibility. In recent years, a great deal of attention has been paid to its fundamental physicochemical properties, but its healability has not been explored in depth. This communication reports the first observation of mechanical and electrical healability of PEDOT:PSS thin films. Upon reaching a certain thickness (about 1 µm), PEDOT:PSS thin films damaged with a sharp blade can be electrically healed by simply wetting the damaged area with water. The process is rapid, with a response time on the order of 150 ms. Significantly, after being wetted the films are transformed into autonomic self-healing materials without the need of external stimulation. This work reveals a new property of PEDOT:PSS and enables its immediate use in flexible and biocompatible electronics, such as electronic skin and bioimplanted electronics, placing conducting polymers on the front line for healing applications in electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polymer films

Science.gov (United States)

Granick, Steve; Sukhishvili, Svetlana A.

2004-05-25

A film contains a first polymer having a plurality of hydrogen bond donating moieties, and a second polymer having a plurality of hydrogen bond accepting moieties. The second polymer is hydrogen bonded to the first polymer.

Properties of Ce-doped ITO films deposited on polymer substrate by DC magnetron sputtering

International Nuclear Information System (INIS)

Kang, Y.M.; Kwon, S.H.; Choi, J.H.; Cho, Y.J.; Song, P.K.

2010-01-01

Ce-doped indium tin oxide (ITO:Ce) films were deposited on flexible polyimide substrates by DC magnetron sputtering using ITO targets containing various CeO 2 contents (CeO 2 : 0, 0.5, 3.0, 4.0, 6.0 wt.%) at room temperature and post-annealed at 200 o C. The crystallinity of the ITO films decreased with increasing Ce content, and it led to a decrease in surface roughness. In addition, a relatively small change in resistance in dynamic stress mode was obtained for ITO:Ce films even after the annealing at high temperature (200 o C). The minimum resistivity of the amorphous ITO:Ce films was 3.96 x 10 -4 Ωcm, which was deposited using a 3.0 wt.% CeO 2 doped ITO target. The amorphous ITO:Ce films not only have comparable electrical properties to the polycrystalline films but also have a crystallization temperature > 200 o C. In addition, the amorphous ITO:Ce film showed stable mechanical properties in the bended state.

Characterization of polymer, DNA-based, and silk thin film resistivities and of DNA-based films prepared for enhanced electrical conductivity

Science.gov (United States)

Yaney, Perry P.; Ouchen, Fahima; Grote, James G.

2009-08-01

DC resistivity studies were carried out on biopolymer films of DNA-CTMA and silk fibroin, and on selected traditional polymer films, including PMMA and APC. Films of DNA-CTMA versus molecular weight and with conductive dopants PCBM, BAYTRON P and ammonium tetrachloroplatinate are reported. The films were spin coated on glass slides configured for measurements of volume dc resistance. The measurements used the alternating polarity method to record the applied voltage-dependent current independent of charging and background currents. The Arrhenius equation plus a constant was fitted to the conductivity versus temperature data of the polymers and the non-doped DNA-based biopolymers with activation energies ranging from 0.8 to 1.4 eV.

Research by Moessbauer and infrared spectroscopy of films of polyacrylonitrile doped with FeCl2 and FeCl3

International Nuclear Information System (INIS)

Santos, Vadilson M. dos; Silva Filho, Eloi A. da; Nunes Filho, Evaristo

2009-01-01

The heating effect on films of polyacrylonitrile and doping of the ions Fe(II) and Fe (III) may reveal important aspects of the use of this polymer in the search for new materials. This paper was done the doping of the films of PAN with ions Fe(II) and Fe (III), with thermo heating is range of 60 a 90 deg C e de 90 a 170 deg C through the alkaline and acid hydrolysis of the CN groups used spectroscopy of FTIR and Moessbauer techniques to evaluate the structural changes results of doping process this polymer. The results showed that the FTIR spectral have a strong interaction of the ions Fe(II) and Fe (III) with PAN and confirmed by Moessbauer data. (author)

Antibacterial effects of silver-doped hydroxyapatite thin films sputter deposited on titanium

International Nuclear Information System (INIS)

Trujillo, Nathan A.; Oldinski, Rachael A.; Ma, Hongyan; Bryers, James D.; Williams, John D.; Popat, Ketul C.

2012-01-01

Since many orthopedic implants fail as a result of loosening, wear, and inflammation caused by repeated loading on the joints, coatings such as hydroxyapatite (HAp) on titanium with a unique topography have been shown to improve the interface between the implant and the natural tissue. Another serious problem with long-term or ideally permanent implants is infection. It is important to prevent initial bacterial colonization as existing colonies have the potential to become encased in an extracellular matrix polymer (biofilm) that is resistant to antibacterial agents. In this study, plasma-based ion implantation was used to examine the effects of pre-etching on plain titanium. Topographical changes to the titanium samples were examined and compared via scanning electron microscopy. Hydroxyapatite and silver-doped hydroxyapatite thin films were then sputter deposited on titanium substrates etched at − 700 eV. For silver-doped films, two concentrations of silver (∼ 0.5 wt.% and ∼ 1.5 wt.%) were used. Silver concentrations in the film were determined using energy dispersive X-ray spectroscopy. Hydroxyapatite film thicknesses were determined by measuring the surface profile using contact profilometry. Staphylococcus epidermidis and Pseudomonas aeruginosa adhesion studies were performed on plain titanium, titanium coated with hydroxyapatite, titanium coated with ∼ 0.5 wt.% silver-doped hydroxyapatite, and titanium coated with ∼ 1.5 wt.% silver-doped hydroxyapatite. Results indicate that less bacteria adhered to surfaces containing hydroxyapatite and silver; further, as the hydroxyapatite films delaminated, silver ions were released which killed bacteria in suspension. - Highlights: ► We have developed a combination of plasma-based ion implantation and ion beam sputter deposition technique. ► Silver-doped hydroxyapatite thin films on titanium were developed. ► The thin films showed the ability to control the concentration of silver that is doped within the

Exceptionally crystalline and conducting acid doped polyaniline films by level surface assisted solution casting approach

Energy Technology Data Exchange (ETDEWEB)

Puthirath, Anand B.; Varma, Sreekanth J.; Jayalekshmi, S., E-mail: jayalekshmi@cusat.ac.in [Division for Research in Advanced Materials, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022 (India); Methattel Raman, Shijeesh [Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Cochin, Kerala 682022 (India)

2016-04-18

Emeraldine salt form of polyaniline (PANI) was synthesized by chemical oxidative polymerisation method using ammonium persulfate as oxidant. Resultant emeraldine salt form of PANI was dedoped using ammonia solution and then re-doped with camphor sulphonic acid (CSA), naphthaline sulphonic acid (NSA), hydrochloric acid (HCl), and m-cresol. Thin films of these doped PANI samples were deposited on glass substrates using solution casting method with m-cresol as solvent. A level surface was employed to get homogeneous thin films of uniform thickness. Detailed X-ray diffraction studies have shown that the films are exceptionally crystalline. The crystalline peaks observed in the XRD spectra can be indexed to simple monoclinic structure. FTIR and Raman spectroscopy studies provide convincing explanation for the exceptional crystallinity observed in these polymer films. FESEM and AFM images give better details of surface morphology of doped PANI films. The DC electrical conductivity of the samples was measured using four point probe technique. It is seen that the samples also exhibit quite high DC electrical conductivity, about 287 S/cm for CSA doped PANI, 67 S/cm for NSA doped PANI 65 S/cm for HCl doped PANI, and just below 1 S/cm for m-cresol doped PANI. Effect of using the level surface for solution casting is studied and correlated with the observed crystallinity.

Metal Oxides Doped PPY-PVA Blend Thin Films Based Gas Sensor

Directory of Open Access Journals (Sweden)

D. B. DUPARE

2009-02-01

Full Text Available Synthesis of metal oxides doped polypyrrole–polyvinyl alcohol blend thin films by in situ chemical oxidative polymerization, using microwave oven on glass substrate for development of Ammonia and Trimethyl ammine hazardous gas sensor. The all experimental process carried out at room temperature(304 K. These polymer materials were characterized by Chemical analyses, spectral studies (UV-visible and IR and conductivity measurement by four –probe technique. The surface morphology as observed in the SEM image was observed to be uniformly covering the entire substrate surface. The sensor was used for different concentration (ppm of TMA and Ammonia gas investigation at room temperature (304 k. This study found to possess improved electrical, mechanical and environmental stability metal oxides doped PPY-PVA films.

Effects of pentacene-doped PEDOT:PSS as a hole-conducting layer on the performance characteristics of polymer photovoltaic cells.

Science.gov (United States)

Kim, Hyunsoo; Lee, Jungrae; Ok, Sunseong; Choe, Youngson

2012-01-05

We have investigated the effect of pentacene-doped poly(3,4-ethylenedioxythiophene:poly(4-styrenesulfonate) [PEDOT:PSS] films as a hole-conducting layer on the performance of polymer photovoltaic cells. By increasing the amount of pentacene and the annealing temperature of pentacene-doped PEDOT:PSS layer, the changes of performance characteristics were evaluated. Pentacene-doped PEDOT:PSS thin films were prepared by dissolving pentacene in 1-methyl-2-pyrrolidinone solvent and mixing with PEDOT:PSS. As the amount of pentacene in the PEDOT:PSS solution was increased, UV-visible transmittance also increased dramatically. By increasing the amount of pentacene in PEDOT:PSS films, dramatic decreases in both the work function and surface resistance were observed. However, the work function and surface resistance began to sharply increase above the doping amount of pentacene at 7.7 and 9.9 mg, respectively. As the annealing temperature was increased, the surface roughness of pentacene-doped PEDOT:PSS films also increased, leading to the formation of PEDOT:PSS aggregates. The films of pentacene-doped PEDOT:PSS were characterized by AFM, SEM, UV-visible transmittance, surface analyzer, surface resistance, and photovoltaic response analysis.

Evaluation of structural and optical properties of Ce3+ ions doped (PVA/PVP) composite films for new organic semiconductors

Science.gov (United States)

Ali, F. M.; Kershi, R. M.; Sayed, M. A.; AbouDeif, Y. M.

2018-06-01

Polymer blend films based on Polyvinyl alcohol (PVA)/Poly(vinylpyrrolidone) (PVP) doped with different concentration of cerium ions [(PVA/PVP)-x wt.% Ce3+] (x = 3%, 5%, 10% and 15%) were prepared by the conventional solution casting technique. The characteristics of the prepared polymer composite films were studied using X-ray diffraction (XRD), FT-IR and UV-Vis. spectroscopy. The XRD patterns of the investigated samples revealed a clear reduction on the structural parameters such as crystallinity degree and cluster size D of the doped PVA/PVP blend films compared with the virgin one whereas there is no big difference in the d spacing of the product composite films. Significant changes in FT-IR spectra are observed which reveal an interactions between the cerium ions and PVA/PVP blends. The absorption spectra in the ultraviolet-visible region showed a wide red shift in the fundamental absorption edge of (PVA/PVP)-x wt. % Ce3+ composites. The optical gap Eg gradually decreased from 4.54 eV for the undoped PVA/PVP film to 3.10 eV by increasing Ce3+ ions content. The optical dispersion parameters have been analyzed according to Wemple-Didomenico single oscillator model. The dispersion energy Ed, the single oscillator energy Eo, the average inter-band oscillator wavelength λo and the static refractive index no are strongly affected by cerium ions doping. Cerium ions incorporation in PVA/PVP blend films leads to a significant increase in the refractive index and decrease in the optical gap. These results are likely of great important in varieties of applications including polymer waveguides, organic semiconductors, polymer solar cells and optoelectronics devices.

Atmospheric Pressure Plasma Polymerization Synthesis and Characterization of Polyaniline Films Doped with and without Iodine

Directory of Open Access Journals (Sweden)

Choon-Sang Park

2017-11-01

Full Text Available Although polymerized aniline (polyaniline, PANI with and without iodine (I2 doping has already been extensively studied, little work has been done on the synthesis of PANI films using atmospheric pressure plasma (APP deposition. Therefore, this study characterized pure and I2-doped PANI films synthesized using an advanced APP polymerization system. The I2 doping was conducted ex-situ and using an I2 chamber method following the APP deposition. The pure and I2-doped PANI films were structurally analyzed using field emission scanning electron microscope (FE-SEM, atomic force microscope (AFM, X-ray Diffraction (XRD, Fourier transform infrared spectroscopy (FT-IR, X-ray photoelectron spectroscopy (XPS, and time of flight secondary ion mass spectrometry (ToF-SIMS studies. When increasing the I2 doping time, the plane and cross-sectional SEM images showed a decrease in the width and thickness of the PANI nanofibers, while the AFM results showed an increase in the roughness and grain size of the PANI films. Moreover, the FT-IR, XPS, and ToF-SIMS results showed an increase in the content of oxygen-containing functional groups and C=C double bonds, yet decrease in the C–N and C–H bonds when increasing the I2 doping time due to the reduction of hydrogen in the PANI films via the I2. To check the suitability of the conductive layer for polymer display applications, the resistance variations of the PANI films grown on the interdigitated electrode substrates were also examined according to the I2 doping time.

Blue electroluminescence nanodevice prototype based on vertical ZnO nanowire/polymer film on silicon substrate

International Nuclear Information System (INIS)

He Ying; Wang Junan; Chen Xiaoban; Zhang Wenfei; Zeng Xuyu; Gu Qiuwen

2010-01-01

We present a polymer-complexing soft template technique to construct the ZnO-nanowire/polymer light emitting device prototype that exhibits blue electrically driven emission with a relatively low-threshold voltage at room temperature in ambient atmosphere, and the ZnO-nanowire-based LED's emission wavelength is easily tuned by controlling the applied-excitation voltage. The nearly vertically aligned ZnO-nanowires with polymer film were used as emissive layers in the devices. The method uses polymer as binder in the LED device and dispersion medium in the luminescence layer, which stabilizes the quasi-arrays of ZnO nanowires embedding in a thin polymer film on silicon substrate and passivates the surface of ZnO nanocrystals, to prevent the quenching of luminescence. Additionally, the measurements of electrical properties showed that ZnO-nanowire/polymer film could significantly improve the conductivity of the film, which could be attributed to an increase in both Hall mobility and carrier concentration. The results indicated that the novel technique is a low-cost process for ZnO-based UV or blue light emission and reduces the requirement for achieving robust p-doping of ZnO film. It suggests that such ZnO-nanowire/polymer-based LEDs will be suitable for the electro-optical application.

Effects of Iodine Doping on Optoelectronic and Chemical Properties of Polyterpenol Thin Films

Directory of Open Access Journals (Sweden)

Kateryna Bazaka

2017-01-01

Full Text Available Owing to their amorphous, highly cross-liked nature, most plasma polymers display dielectric properties. This study investigates iodine doping as the means to tune optoelectronic properties of plasma polymer derived from a low-cost, renewable resource, i.e., Melaleuca alternifolia oil. In situ exposure of polyterpenol to vapors of electron-accepting dopant reduced the optical band gap to 1.5 eV and increased the conductivity from 5.05 × 10−8 S/cm to 1.20 × 10−6 S/cm. The increased conductivity may, in part, be attributed to the formation of charge-transfer complexes between the polymer chain and halogen, which act as a cation and anion, respectively. Higher levels of doping notably increased the refractive index, from 1.54 to 1.70 (at 500 nm, and significantly reduced the transparency of films.

Enhanced flux pinning properties in superconducting YBa{sub 2}Cu{sub 3}O{sub 7−z} films by a novel chemical doping approach

Energy Technology Data Exchange (ETDEWEB)

Wang, W.T., E-mail: wtwang@swjtu.edu.cn [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Southwest Jiaotong University, Mail Stop 165, Chengdu, Sichuan 610031 (China); Pu, M.H.; Lei, M.; Zhang, H.; Wang, Z. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Southwest Jiaotong University, Mail Stop 165, Chengdu, Sichuan 610031 (China); Zhang, H. [Department of Physics, Peking University, Beijing 100871 (China); Cheng, C.H. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Southwest Jiaotong University, Mail Stop 165, Chengdu, Sichuan 610031 (China); Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia); Zhao, Y., E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Southwest Jiaotong University, Mail Stop 165, Chengdu, Sichuan 610031 (China); Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia)

2013-10-15

Highlights: • Pure and Co-doped YBCO films were prepared by newly-developed chemical method. • The doped films have much denser and smoother surface microstructures. • Significantly enhanced fux-pinning properties have been obtained for dilute Co-doped flm. -- Abstract: Pure and cobalt-doped superconducting YBa{sub 2}Cu{sub 3}O{sub 7−z} (YBCO) films were prepared on (0 0 l) LaAlO{sub 3} substrate by a newly developed polymer-assisted metal organic deposition method. The cobalt-doped YBCO films display much denser and smoother surface microstructures and the superconducting transition temperature T{sub c} spans a small range of 1.7 K with the doping levels. Significantly enhanced flux-pinning properties have been obtained for dilute cobalt-doped film. This may be attributed to the good grain connections and the effective flux pinning centers introduced by cobalt doping.

Characterization and electrical properties of polyvinyl alcohol based polymer electrolyte films doped with ammonium thiocyanate

Energy Technology Data Exchange (ETDEWEB)

Kulshrestha, N., E-mail: niharikakul@gmail.com; Chatterjee, B.; Gupta, P.N., E-mail: guptapn07@yahoo.co.in

2014-05-01

Highlights: • Polyvinyl alcohol (PVA). • Ammonium thiocyanate (NH{sub 4}SCN). • Electrical conductivity. • Fractals. - Abstract: In this communication, films of polyvinyl alcohol (PVA) polymer complexed with ammonium thiocyanate (NH{sub 4}SCN) salt were studied. XRD (X-ray diffraction) was used to study the complexation of salt with the polymer matrix and amorphicity in the films. DSC (differential scanning calorimetry) studies showed that the glass transition temperatures (T{sub g}) of the PVA:NH{sub 4}SCN complexed films were less than pristine PVA. Raman analysis was analyzed in order to study the change in the vibrational bands due to the complexation of salt with PVA. Optical micrographs confirm the fractal formation in 75:25 and 70:30 PVA:NH{sub 4}SCN films. Ionic transference number was estimated by Wagner's polarization method and its large value indicates that conduction takes place mainly due to mobile ionic species. Maximum conductivity ∼10{sup −3} S/cm at room temperature was obtained for 70:30 ratio of PVA: NH{sub 4}SCN polymer electrolyte films.

Effect of silver nanoparticles on photo-induced reorientation of azo groups in polymer films

International Nuclear Information System (INIS)

Zhou Jingli; Yang Jianjun; Sun Youyi; Zhang Douguo; Shen Jing; Zhang Qijin; Wang Keyi

2007-01-01

A series of polymer films containing azo groups and silver nanoparticles were prepared. Photo-induced reorientation of the film was conducted under irradiation of polarized light with wavelength at 365 nm, 442 nm and 532 nm, respectively. The influence of the concentration of dopant silver on the reorientation of the azo groups was studied. An enhancement of about 50% for the reorientation rate and about 70% for the reorientation amplitude was achieved. From a comparison of the enhancement obtained by irradiating with three different light sources, it was realized that the mechanism for enhancement of reorientation of azo groups is due to plasmon resonance of silver nanoparticles doped in the polymer films

Effects of electric and magnetic fields on fluorescence in electron donor and acceptor pairs of pyrene and N-methylphthalimide doped in a polymer film

Energy Technology Data Exchange (ETDEWEB)

Yoshizawa, Tomokazu [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Mizoguchi, Miwako [Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Iimori, Toshifumi [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Nakabayashi, Takakazu [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan); Ohta, Nobuhiro [Research Institute for Electronic Science (RIES), Hokkaido University, N12, W6 Sapporo 060-0812 (Japan); Graduate School of Environmental Earth Science, Hokkaido University, Sapporo 060-0810 (Japan)], E-mail: nohta@es.hokudai.ac.jp

2006-05-09

External electric-field-induced change in fluorescence spectra as well as in fluorescence decay has been measured for electron donor and acceptor pairs of pyrene (PY) and N-methylphthalimide (NMPI) doped in a polymer film. Field-induced quenching and field-induced shortening of lifetime are observed for fluorescence emitted from the locally excited (LE) state of PY, indicating that intermolecular electron transfer from the excited state of PY to NMPI is enhanced by an electric field in a polymer film. A simulation has been made for the field effect on decay profile of the LE fluorescence of PY. Exciplex fluorescence is also quenched by an electric field because of the field-induced decrease in the initial population of the fluorescent exciplex. Both in LE fluorescence of PY and in exciplex fluorescence, electric-field-induced quenching becomes less efficient in the presence of a magnetic field. The mechanism of the synergy effect of electric and magnetic fields on fluorescence has been discussed.

Effects of electric and magnetic fields on fluorescence in electron donor and acceptor pairs of pyrene and N-methylphthalimide doped in a polymer film

International Nuclear Information System (INIS)

Yoshizawa, Tomokazu; Mizoguchi, Miwako; Iimori, Toshifumi; Nakabayashi, Takakazu; Ohta, Nobuhiro

2006-01-01

External electric-field-induced change in fluorescence spectra as well as in fluorescence decay has been measured for electron donor and acceptor pairs of pyrene (PY) and N-methylphthalimide (NMPI) doped in a polymer film. Field-induced quenching and field-induced shortening of lifetime are observed for fluorescence emitted from the locally excited (LE) state of PY, indicating that intermolecular electron transfer from the excited state of PY to NMPI is enhanced by an electric field in a polymer film. A simulation has been made for the field effect on decay profile of the LE fluorescence of PY. Exciplex fluorescence is also quenched by an electric field because of the field-induced decrease in the initial population of the fluorescent exciplex. Both in LE fluorescence of PY and in exciplex fluorescence, electric-field-induced quenching becomes less efficient in the presence of a magnetic field. The mechanism of the synergy effect of electric and magnetic fields on fluorescence has been discussed

Using in-situ polymerization of conductive polymers to enhance the electrical properties of solution-processed carbon nanotube films and fibers.

Science.gov (United States)

Allen, Ranulfo; Pan, Lijia; Fuller, Gerald G; Bao, Zhenan

2014-07-09

Single-walled carbon nanotubes/polymer composites typically have limited conductivity due to a low concentration of nanotubes and the insulating nature of the polymers used. Here we combined a method to align carbon nanotubes with in-situ polymerization of conductive polymer to form composite films and fibers. Use of the conducting polymer raised the conductivity of the films by 2 orders of magnitude. On the other hand, CNT fiber formation was made possible with in-situ polymerization to provide more mechanical support to the CNTs from the formed conducting polymer. The carbon nanotube/conductive polymer composite films and fibers had conductivities of 3300 and 170 S/cm, respectively. The relatively high conductivities were attributed to the polymerization process, which doped both the SWNTs and the polymer. In-situ polymerization can be a promising solution-processable method to enhance the conductivity of carbon nanotube films and fibers.

doped ZnO thick film resistors

Indian Academy of Sciences (India)

The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

Energy Technology Data Exchange (ETDEWEB)

Dosmailov, M. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Leonat, L.N. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Patek, J. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Roth, D.; Bauer, P. [Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Scharber, M.C.; Sariciftci, N.S. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Pedarnig, J.D., E-mail: johannes.pedarnig@jku.at [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria)

2015-09-30

Aluminum doped ZnO (AZO) and pure ZnO thin films are grown on polymer substrates by pulsed-laser deposition and the optical, electrical, and structural film properties are investigated. Laser fluence, substrate temperature, and oxygen pressure are varied to obtain transparent, conductive, and stoichiometric AZO layers on polyethylene terephthalate (PET) that are free of cracks. At low fluence (1 J/cm{sup 2}) and low pressure (10{sup −3} mbar), AZO/PET samples of high optical transmission in the visible range, low electrical sheet resistance, and high figure of merit (FOM) are produced. AZO films on fluorinated ethylene propylene have low FOM. The AZO films on PET substrates are used as electron transport layer in inverted organic solar cell devices employing P3HT:PCBM as photovoltaic polymer-fullerene bulk heterojunction. - Highlights: • Aluminum doped and pure ZnO thin films are grown on polyethylene terephthalate. • Growth parameters laser fluence, temperature, and gas pressure are optimized. • AZO films on PET have high optical transmission and electrical conductance (FOM). • Organic solar cells on PET using AZO as electron transport layer are made. • Power conversion efficiency of these OSC devices is measured.

Selective Template Wetting Routes to Hierarchical Polymer Films: Polymer Nanotubes from Phase-Separated Films via Solvent Annealing.

Science.gov (United States)

Ko, Hao-Wen; Cheng, Ming-Hsiang; Chi, Mu-Huan; Chang, Chun-Wei; Chen, Jiun-Tai

2016-03-01

We demonstrate a novel wetting method to prepare hierarchical polymer films with polymer nanotubes on selective regions. This strategy is based on the selective wetting abilities of polymer chains, annealed in different solvent vapors, into the nanopores of porous templates. Phase-separated films of polystyrene (PS) and poly(methyl methacrylate) (PMMA), two commonly used polymers, are prepared as a model system. After anodic aluminum oxide (AAO) templates are placed on the films, the samples are annealed in vapors of acetic acid, in which the PMMA chains are swollen and wet the nanopores of the AAO templates selectively. As a result, hierarchical polymer films containing PMMA nanotubes can be obtained after the AAO templates are removed. The distribution of the PMMA nanotubes of the hierarchical polymer films can also be controlled by changing the compositions of the polymer blends. This work not only presents a novel method to fabricate hierarchical polymer films with polymer nanotubes on selective regions, but also gives a deeper understanding in the selective wetting ability of polymer chains in solvent vapors.

Chemical potential pinning due to equilibrium electron transfer at metal/C60-doped polymer interfaces

Science.gov (United States)

Heller, C. M.; Campbell, I. H.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

1997-04-01

We report electroabsorption measurements of the built-in electrostatic potential in metal/C60-doped polymer/metal structures to investigate chemical potential pinning due to equilibrium electron transfer from a metal contact to the electron acceptor energy level of C60 molecules in the polymer film. The built-in potentials of a series of structures employing thin films of both undoped and C60-doped poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) were measured. For undoped MEH-PPV, which has an energy gap of about 2.4 eV, the maximum built-in potential is about 2.1 eV, whereas for C60-doped MEH-PPV the maximum built-in potential decreases to 1.5 eV. Electron transfer to the C60 molecules close to the metal interface pins the chemical potential of the metal contact near the electron acceptor energy level of C60 and decreases the built-in potential of the structure. From the systematic dependence of the built-in potential on the metal work function we find that the electron acceptor energy level of C60 in MEH-PPV is about 1.7 eV above the hole polaron energy level of MEH-PPV.

Salt-Doped Polymer Light-Emitting Devices

Science.gov (United States)

Gautier, Bathilde

Polymer Light-Emitting Electrochemical Cells (PLECs) are solid state devices based on the in situ electrochemical doping of the luminescent polymer and the formation of a p-n junction where light is emitted upon the application of a bias current or voltage. PLECs answer the drawbacks of polymer light-emitting diodes as they do not require an ultra-thin active layer nor are they reliant on low work function cathode materials that are air unstable. However, because of the dynamic nature of the doping, they suffer from slow response times and poor stability over time. Frozen-junction PLECs offer a solution to these drawbacks, yet they are impractical due to their sub-ambient operation temperature requirement. Our work presented henceforth aims to achieve room temperature frozen-junction PLECS. In order to do that we removed the ion solvating/transporting polymer from the active layer, resulting in a luminescent polymer combined solely with a salt sandwiched between an ITO electrode and an aluminum electrode. The resulting device was not expected to operate like a PLEC due to the absence of an ion-solvating and ion-transporting medium. However, we discovered that the polymer/salt devices could be activated by applying a large voltage bias, resulting in much higher current and luminance. More important, the activated state is quasi static. Devices based on the well-known orange-emitting polymer MEH-PPV displayed a luminance storage half-life of 150 hours when activated by forward bias (ITO biased positively with respect to the aluminum) and 200 hours when activated by reverse bias. More remarkable yet, devices based on a green co-polymer displayed no notable decay in current density or luminance even after being stored for 1200 hours at room temperature! PL imaging under UV excitation demonstrates the presence of doping. These devices are described herein along with an explanation of their operating mechanisms.

Conducting polymer film-based immunosensors using carbon nanotube/antibodies doped polypyrrole

Energy Technology Data Exchange (ETDEWEB)

Tam, Phuong Dinh, E-mail: phuongdinhtam@gmail.com [Advanced Institute for Science and Technology (AIST), Hanoi University of Science and Technology (Viet Nam); Hieu, Nguyen Van [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (Viet Nam)

2011-09-15

Carbon nanotube/polypyrrole/antibodies polymer films were synthesized successfully on microelectrodes by electrochemical deposition. Electropolymerization was performed at optimal range between -0.8 and +0.8 V at a scan rate of 50 mV s{sup -1} in an electrochemical mini-cell containing monomer pyrroles, carbon nanotubes, and goat IgGs. The conducting polymer films were characterized by Fourier transform infrared spectrometry, Raman spectra, and Field emission scanning electron microscopy. And then, it was prepared for immunosensor application to determine anti-goat IgGs. The results show that a linear range between 0.05 and 0.7 {mu}g ml{sup -1} for anti-goat IgGs detection was observed for immunosensor, a detection limit as low as 0.05 {mu}g ml{sup -1} and a response time of 1 min. The effect parameters of electropolymerization process on immunosensor response are also studied. It found that the immunosensor well active in 1.5 mg ml{sup -1} CNT concentration, 2.5 mM pyrrole, 10 {mu}g ml{sup -1} goat IgGs.

Synthesis of Antimony Doped Amorphous Carbon Films

Science.gov (United States)

Okuyama, H.; Takashima, M.; Akasaka, H.; Ohtake, N.

2013-06-01

We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

Synthesis of Antimony Doped Amorphous Carbon Films

International Nuclear Information System (INIS)

Okuyama, H; Takashima, M; Akasaka, H; Ohtake, N

2013-01-01

We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp 2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

Doped polymer electrodes for high performance ferroelectric capacitors on plastic substrates

KAUST Repository

Khan, M. A.

2012-10-03

Flexible ferroelectric capacitors with doped polymer electrodes have been fabricated on plastic substrates with performance as good as metal electrodes. The effect of doping on the morphology of polymer electrodes and its impact on device performance have been studied. Improved fatigue characteristics using doped and undoped poly (3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) electrodes versus metal electrodes are observed. It is shown that the polymer electrodes follow classical ferroelectric and dielectric responses, including series resistance effects. The improved device characteristics obtained using highly conducting doped PEDOT:PSS suggest that it may be used both as an electrode and as global interconnect for all-polymer transparent circuits on flexible substrates.

Ultrathin Polymer Films, Patterned Arrays, and Microwells

Science.gov (United States)

Yan, Mingdi

2002-05-01

The ability to control and tailor the surface and interface properties of materials is important in microelectronics, cell growth control, and lab-on-a-chip devices. Modification of material surfaces with ultrathin polymer films is attractive due to the availability of a variety of polymers either commercially or by synthesis. We have developed two approaches to the attachment of ultrathin polymer films on solid substrates. In the first method, a silane-functionalized perfluorophenyl azide (PFPA-silane) was synthesized and used to covalently immobilize polymer thin films on silicon wafers. Silanization of the wafer surface with the PFPA-silane introduced a monolayer of azido groups which in turn covalently attached the polymer film by way of photochemically initiated insertion reactions. The thickness of the film could be adjusted by the type and the molecular weight of the polymer. The method is versatile due to the general C-H and/or N-H insertion reactions of crosslinker; and therefore, no specific reactive functional groups on the polymers are required. Using this method, a new type of microwell array was fabricated from covalently immobilized polymer thin films on flat substrates. The arrays were characterized with AFM, XPS, and TOF-SIMS. The second method describes the attachment of polymer thin films on solid substrates via UV irradiation. The procedure consisted of spin-coating a polymer film and irradiating the film with UV light. Following solvent extraction, a thin film remained. The thickness of the film, from a few to over a hundred nanometers, was controlled by varying solution concentration and the molecular weight of the polymer.

Metal doped fluorocarbon polymer films prepared by plasma polymerization using an RF planar magnetron target

International Nuclear Information System (INIS)

Biederman, H.; Holland, L.

1983-01-01

Fluorocarbon films have been prepared by plasma polymerization of CF 4 using an RF planar magnetron with an aluminium target. More than one order of magnitude higher deposition rate has been achieved in comparison with an r.f. diode system operated under similar conditions of monomer pressure and flow rate and power input. A glow discharge in a CF 4 [25%]-argon[75%] mixture was used to incorporate aluminium from a target electrode into the polymer films. The foregoing mixture and another based on CF 4 [87%]-argon[13%] were used in the RF discharge with a copper target. Some experiments with a gold target and pure CF 4 as the inlet gas were also made. The film structure was examined by SEM and TEM and characteristic micrographs are presented here. The composition of the films was estimated from an EAS study. The sheet resistivity of the metal/polymer film complexes was determined. (orig.)

Metal doped fluorocarbon polymer films prepared by plasma polymerization using an RF planar magnetron target

Energy Technology Data Exchange (ETDEWEB)

Biederman, H.; Holland, L. (Sussex Univ., Brighton (UK). Lab. for Plasma Materials Processing)

1983-07-01

Fluorocarbon films have been prepared by plasma polymerization of CF/sub 4/ using an RF planar magnetron with an aluminium target. More than one order of magnitude higher deposition rate has been achieved in comparison with an R.F. diode system operated under similar conditions of monomer pressure and flow rate and power input. A glow discharge in a CF/sub 4/(25%)-argon(75%) mixture was used to incorporate aluminium from a target electrode into the polymer films. The foregoing mixture and another based on CF/sub 4/(87%)-argon(13%) were used in the RF discharge with a copper target. Some experiments with a gold target and pure CF/sub 4/ as the inlet gas were also made. The film structure was examined by SEM and TEM and characteristic micrographs are presented here. The composition of the films was estimated from an EAS study. The sheet resistivity of the metal/polymer film complexes was determined.

Characteristics of Electro-Optic Device Using Conducting Polymers, Polythiophene and Polypyrrole Films

Science.gov (United States)

Kaneto, Keiichi; Yoshino, Katsumi; Inuishi, Yoshio

1983-07-01

Detailed characteristics of electro-optic elements (color switching and memory) utilizing the spectral change of conducting polymers by electrochemical doping and undoping are studied. The response time of color switching, for example, red≤ftrightarrowblue in polythiophene film in the electrolyte of LiBF4/acetonitrile is 30˜100 msec under the applied voltages of -2.0{≤ftrightarrow}+4.0 V vs. Li plate. More than 103 cycles of color switch are observed quite reproducibly. Three color states of yellow green, dark brown and blue are demonstrated for polypyrrole film.

Development of polymer films by the coalescence of polymer particles in powdered and aqueous polymer-modified mortars

International Nuclear Information System (INIS)

Afridi, M.U.K.; Ohama, Y.; Demura, K.; Iqbal, M.Z.

2003-01-01

This paper evaluates and compares the coalescence of polymer particles (continuous polymer films formation) in powdered polymer-modified mortars (PPMMs) and aqueous polymer-modified mortars (APMMs). Polymer-modified mortars (PMMs) using various redispersible polymer powders (powdered cement modifiers) and polymer dispersions (aqueous cement modifiers) were prepared by varying the polymer-cement ratio (P/C) and were tested for the characterization of polymer films using a scanning electron microscope (SEM) after curing for 28 days. It is concluded from the test results that mortar constituents of unmodified mortar (UMM) are loosely joined with each other due to the absence of polymer films, thus having a structure with comparatively lower mechanical and durability characteristics. By contrast, mortar constituents in PPMMs and APMMs are compactly joined with each other due to the presence of interweaving polymer films, thereby forming a monolithic structure with improved mechanical and durability characteristics. However, the results make obvious the poor coalescence of polymer particles or development of inferior quality polymers films in PPMMs as compared to that observed in APMMs. Moreover, PPMMs show less uniform distribution of polymer films as compared to that in APMMs. Different powdered cement modifiers have different film-forming capabilities. However, such difference is hardly recognized in aqueous cement modifiers. The polymer films in PPMMs and APMMs may acquire different structures. They may appear as mesh-like, thread-like, rugged, dense or fibrous with fine or rough surfaces. Development of coherent polymer films is not well pronounced at a P/C of 5% in PPMMs, whereas sometimes coherent polymer films are observed at a P/C of 5% in APMMs. At a P/C of 10% or more, fully developed, coherent polymer films are observed in both PPMMs and APMMs

Mechanical properties of phosphorus-doped polysilicon films

CERN Document Server

Lee, S W; Kim, J P; Park, S J; Yi, S W; Cho, D I; Kim, J J

1998-01-01

Polysilicon films deposited by low pressure chemical vapor deposition (LPCVD) are the most widely used structural material in microelectromechanical systems (MEMS). However, the structural properties of LPCVD polysilicon films are known to vary significantly, depending on deposition conditions as well as post-deposition processes. This paper investigates the effects of phosphorus doping and texture on Young's modulus of polysilicon films. Polysilicon films are deposited at 585 .deg. C, 605 .deg. C, and 625 .deg. C to a thickness of 2 mu m. Specimens with varying phosphorus doping levels are prepared by the diffusion process at various temperatures and times using both POCl sub 3 and phosphosilicate glass (PSG) source. Texture is measured using an X-ray diffractometer. Young's modulus is estimated from the average values of the resonant frequencies measured from four-different size lateral resonators. Our results show that Young's modulus of diffusion doped polysilicon films decreases with increasing doping co...

Micro structural studies of PVA doped with metal oxide nanocomposites films

Energy Technology Data Exchange (ETDEWEB)

Kumar, N. B. Rithin [Dept. of Physics, Srinivas School of Engineering, Mangalore-575025, Karnataka (India); Crasta, Vincent, E-mail: vcrasta@yahoo.com; Viju, F. [Dept. of Physics, St. Joseph Engineering College, Vamanjoor, Mangalore-575028, Karnataka (India); Praveen, B. M. [Dept. of Chemistry, Srinivas School of Engineering, Mangalore-575025, Karnataka (India); Shreeprakash, B. [Dept. of Mechanical Engineering, Srinivas School of Engineering, Mangalore-575025, Karnataka (India)

2014-04-24

Nanostructured PVA polymer composites are of rapidly growing interest because of their sized-coupled properties. The present article deals with both ZnO and WO{sub 3} embedded in a polyvinyl alcohol (PVA) matrix using a solvent casting method. These films were characterized using FTIR, XRD, and SEM techniques. The FTIR spectra of the doped PVA shows shift in the bands, which can be understood on the basis of intra/inter molecular hydrogen bonding with the adjacent OH group of PVA. The phase homogeneity and morphology of the polymer composites have been analyzed using scanning electron microscope (SEM). The crystal structure and crystallinity of polymer nanocomposites were studied by X-ray diffraction technique (XRD). Thus due to the interaction of dopant and complex formation, the structural repositioning takes place and crystallinity of the nanocomposites decreases.

Comparison study of V-doped ZnO thin films on polycarbonate and quartz substrates deposited by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Suzuki, Tomoya, E-mail: tomoya@ecei.tohoku.ac.jp; Chiba, Hiroshi; Kawashima, Tomoyuki; Washio, Katsuyoshi

2016-04-30

Vanadium (V) doped ZnO (VZO) thin films were deposited on flexible polymer and quartz substrates by RF magnetron sputtering, and influences of deposition parameters of V concentration, RF power and growth temperature on resistivity, transmittance and crystallinity were investigated. For the polymer substrates, both a high heat-resistant polycarbonate (PC) film and a functional-layer-coated PC film were adopted. The resistivity decreased gradually but the transmittance was worsened with increasing V concentration. Low RF power and high growth temperature improved both transparency and conductivity. By over-coating of the functional layers, c-axis orientation was deteriorated while low-resistivity and high-transmittance characteristics were achieved. Resistivity and average visible-transmittance (wavelength = 450–800 nm) of VZO films on untreated PC and over-coated PC substrates were 0.98 mΩ cm and 83.7%, and 1.2 mΩ cm and 80.3%, respectively, at V concentration of 2 at.%, RF power of 100 W and growth temperature of 175 °C. VZO films on the polymer substrates had slightly high resistivity but nearly the same optical transmittance, compared to those on quartz, under the identical deposition parameters. These results indicate that good electrical and optical properties can be achieved for the VZO films on PC substrate. - Highlights: • V-doped ZnO (VZO) was deposited on polymer substrate. • Effects of V concentration, RF power and growth temperature were investigated. • Resistivity decreased gradually with increasing V concentration. • Low RF power was suitable to obtain low resistivity and high transmittance. • High growth temperature improved both transparency and conductivity.

Photoluminescent study of Polycarbonate (PC) and Poly(9-vinylcarbazole) (PVK) doped films with europium complex; Estudo fotoluminescente de filmes de Policarbonato (PC) e Poli(9-vinilcarbazol) (PVK) dopados com complexo de europio

Energy Technology Data Exchange (ETDEWEB)

Forster, Pedro Lima

2010-07-01

Polymers doped with rare earth complexes are advantaged in film production for many applications in the luminescent field. In this study luminescent polymer obtained from polycarbonate (PC) and poly(9-vinylcarbazole) films doped with diaquatris(thenoyltrifluoroacetonate)europium(III) complex [Eu(tta){sub 3}(H{sub 2}0){sub 2}] were prepared and their calorimetric and luminescent properties in the solid state are reported. The thermal behavior was investigated by differential scanning calorimetry (OSC) and thermogravimetry analysis (TGA). Due of the addition of rare earth Eu(tta){sub 3}(H{sub 2}0){sub 2}] into PC and PVK matrices, changes were observed in the thermal behavior concerning the glass transition and thermal stability. Characteristic broadened narrow bands arising from the {sup 5}D{sub 0} -{yields} {sup 7}F{sub J} transitions (J = 0-4) of Eu{sup 3+} ion indicate the incorporation of the Eu{sup 3+} ions into those polymers. The luminescent films show enhancement emission intensity with an increase in the rare earth concentration in polymeric matrix accompanied by decrease in thermal stability. (author)

Diffusion, swelling, cross linkage study and mechanical properties of ZnO doped PVA/NaAlg blend polymer nanocomposite

Science.gov (United States)

Guruswamy, B.; Ravindrachary, V.; Shruthi, C.; Hegde, Shreedatta; Sagar, Rohan N.

2018-04-01

ZnO nano particles were synthesized using a chemical precipitation method. Pure and ZnO nano particle doped PVA-NaAlg blend composite films were prepared using solution casing method. Structural information of these composites was studied using FTIR. Diffusion kinetics of these polymer blend composite were studied using Flory-Huggins theory. Using these diffusion studies, cross-linking density and swelling properties of the films were analyzed. Mechanical properties of these composite are also studied.

Photopatterning of heterostructured polymer Langmuir-Blodgett films

International Nuclear Information System (INIS)

Li Tiesheng; Mitsuishi, Masaya; Miyashita, Tokuji

2008-01-01

Heterostructured polymer Langmuir-Blodgett (LB) film prepared by using poly(N-dodecylacrylamide-co-t-butyl 4-vinylphenyl carbonate) (p(DDA-tBVPC53)) and poly(N-neopentyl methacrylamide-co-9-anthrylmethyl methacrylate) (p(nPMA-AMMA10)) polymer LB films which can act as photogenerator layers were investigated. Patterns with a resolution of 0.75 μm were obtained on heterostructured polymer LB films composed of 4 layers of p(nPMA-AMMA10) LB film (top layers) and 40 layers of p(DDA-tBVPC53) LB film (under layers) on a silicon wafer by deep UV irradiation followed by development with 1% tetramethylammonium hydroxide aqueous solution. The sensitivity of the heterostructured polymer LB films was improved without loss of the resolution compared with p(DDA-tBVPC53) LB film. The etch resistance of the heterostructured polymer LB films was sufficiently good to allow patterning of a copper film suitable for photomask fabrication

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

Energy Technology Data Exchange (ETDEWEB)

Das, Sayantan; Alford, T. L. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287, USA and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

2013-06-28

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

Chemical potential pinning due to equilibrium electron transfer at metal/C{sub 60}-doped polymer interfaces

Energy Technology Data Exchange (ETDEWEB)

Heller, C.M.; Campbell, I.H.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75080 (United States)

1997-04-01

We report electroabsorption measurements of the built-in electrostatic potential in metal/C{sub 60}-doped polymer/metal structures to investigate chemical potential pinning due to equilibrium electron transfer from a metal contact to the electron acceptor energy level of C{sub 60} molecules in the polymer film. The built-in potentials of a series of structures employing thin films of both undoped and C{sub 60}-doped poly[2-methoxy, 5-(2{sup {prime}}-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) were measured. For undoped MEH-PPV, which has an energy gap of about 2.4 eV, the maximum built-in potential is about 2.1 eV, whereas for C{sub 60}-doped MEH-PPV the maximum built-in potential decreases to 1.5 eV. Electron transfer to the C{sub 60} molecules close to the metal interface pins the chemical potential of the metal contact near the electron acceptor energy level of C{sub 60} and decreases the built-in potential of the structure. From the systematic dependence of the built-in potential on the metal work function we find that the electron acceptor energy level of C{sub 60} in MEH-PPV is about 1.7 eV above the hole polaron energy level of MEH-PPV. {copyright} {ital 1997 American Institute of Physics.}

Optoelectronic properties of doped hydrothermal ZnO thin films

KAUST Repository

Mughal, Asad J.

2017-03-10

Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.

On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

International Nuclear Information System (INIS)

Vimalkumar, T.V.; Poornima, N.; Jinesh, K.B.; Kartha, C. Sudha; Vijayakumar, K.P.

2011-01-01

In this paper we present studies on ZnO thin films (prepared using Chemical Spray pyrolysis (CSP) technique) doped in two different ways; in one set, 'single doping' using indium was done while in the second set, 'co-doping' using indium and fluorine was adopted. In the former case, effect of in-situ as well as ex-situ doping using In was analyzed. Structural (XRD studies), electrical (I-V measurements) and optical characterizations (through absorption, transmission and photoluminescence studies) of the films were done. XRD analysis showed that, for spray-deposited ZnO films, ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, while in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes; however for higher percentage of in-situ doping, orientation of grains changed from (0 0 2) plane to (1 0 1) plane. The co-doped films had (0 0 2) and (1 0 1) planes. Lowest resistivity (2 x 10 -3 Ω cm) was achieved for the films, doped with 1% Indium through in-situ method. Photoluminescence (PL) emissions of ex-situ doped and co-doped samples had two peaks; one was the 'near band edge' emission (NBE) and the other was the 'blue-green' emission. But interestingly the PL emission of in-situ doped samples exhibited only the 'near band edge' emission. Optical band gap of the films increased with doping percentage, in all cases of doping.

Vacuum thermal evaporation of polyaniline doped with camphor sulfonic acid

Energy Technology Data Exchange (ETDEWEB)

Boyne, Devon; Menegazzo, Nicola; Pupillo, Rachel C.; Rosenthal, Joel; Booksh, Karl S., E-mail: kbooksh@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States)

2015-05-15

Intrinsically conducting polymers belong to a class of organic polymers with intriguing electronic and physical properties specifically for electro-optical applications. Significant interest into doped polyaniline (PAni) can be attributed to its high conductivity and environmental stability. Poor dissolution in most solvents has thus far hindered the successful integration of PAni into commercial applications, which in turn, has led to the investigations of various deposition and acidic doping methods. Physical vapor deposition methods, including D.C. magnetron sputtering and vacuum thermal evaporation, have shown exceptional control over physical film properties (thickness and morphology). However, resulting films are less conductive than films deposited by conventional methods (i.e., spin and drop casting) due to interruption of the hyperconjugation of polymer chains. Specifically, vacuum thermal evaporation requires a postdoping process, which results in incorporation of impurities and oxidation of surface moieties. In this contribution, thermally evaporated films, sequentially doped by vacuum evaporation of an organic acid (camphorsulfonic acid, CSA) is explored. Spectroscopic evidence confirms the successful doping of PAni with CSA while physical characterization (atomic force microscopy) suggests films retain good morphology and are not damaged by the doping process. The procedure presented herein also combines other postpreparation methods in an attempt to improve conductivity and/or substrate adhesion.

Nanoparticles doped film sensing based on terahertz metamaterials

Science.gov (United States)

Liu, Weimin; Fan, Fei; Chang, Shengjiang; Hou, Jiaqing; Chen, Meng; Wang, Xianghui; Bai, Jinjun

2017-12-01

A nanoparticles concentration sensor based on doped film and terahertz (THz) metamaterial has been proposed. By coating the nanoparticles doped polyvinyl alcohol (PVA) film on the surface of THz metamaterial, the effects of nanoparticle concentration on the metamaterial resonances are investigated through experiments and numerical simulations. Results show that resonant frequency of the metamaterial linearly decreases with the increment of doping concentration. Furthermore, numerical simulations illustrate that the redshift of resonance results from the changes of refractive index of the doped film. The concentration sensitivity of this sensor is 3.12 GHz/0.1%, and the refractive index sensitivity reaches 53.33 GHz/RIU. This work provides a non-contact, nondestructive and sensitive method for the detection of nanoparticles concentration and brings out a new application on THz film metamaterial sensing.

Performance enhancement of polymer Schottky diode by doping pentacene

International Nuclear Information System (INIS)

Kang, K.S.; Chen, Y.; Lim, H.K.; Cho, K.Y.; Han, K.J.; Kim, Jaehwan

2009-01-01

Schottky diodes have been fabricated using pentacene-doped poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) as a semiconducting material. To understand the fundamental properties of the pentacene-doped PEDOT:PSS, ultraviolet visible (UV) absorption spectroscopy was employed. It was found that a significant amount of pentacene can dissolve in n-methylpyrrolidone solvent. No characteristic absorption peak of pentacene was observed in the UV-visible spectra of PEDOT:PSS films doped with pentacene,. However, the absorption intensity of the doped PEDOT:PSS films increased as the pentacene concentration increased in particular in the UV region. The atomic force microscope images show that the surface roughnesses of PEDOT:PSS films increased as the pentacene concentration increased. Three-layer Schottky diodes comprising Al/PEDOT:PSS/Au or Al/PEDOT:PSS-pentacene/Au were fabricated. The maximum forward currents of non-doped and doped Schottky diodes were 4.8 and 440 μA/cm 2 at 3.3 MV/m, respectively. The forward current increased nearly two orders of magnitude for Schottky diode doped with 11.0 wt.% of pentacene.

Electrical conductivity of polyaniline doped PVC–PMMA polymer ...

Indian Academy of Sciences (India)

which has now become one of the hot topics of research. (Radhakrishnan 2001). ... and sensitive methods for studying the polymer structure. (Ferraro and Walkar ... acceptor mixed polymers doped with polyaniline, was measured to identify ...

In situ measurements of the optical absorption of dioxythiophene-based conjugated polymers

Science.gov (United States)

Hwang, J.; Schwendeman, I.; Ihas, B. C.; Clark, R. J.; Cornick, M.; Nikolou, M.; Argun, A.; Reynolds, J. R.; Tanner, D. B.

2011-05-01

Conjugated polymers can be reversibly doped by electrochemical means. This doping introduces new subband-gap optical absorption bands in the polymer while decreasing the band-gap absorption. To study this behavior, we have prepared an electrochemical cell allowing in situ measurements of the optical properties of the polymer. The cell consists of a thin polymer film deposited on gold-coated Mylar behind which is another polymer that serves as a counterelectrode. An infrared transparent window protects the upper polymer from ambient air. By adding a gel electrolyte and making electrical connections to the polymer-on-gold films, one may study electrochromism in a wide spectral range. As the cell voltage (the potential difference between the two electrodes) changes, the doping level of the conjugated polymer films is changed reversibly. Our experiments address electrochromism in poly(3,4-ethylenedioxythiophene) (PEDOT) and poly(3,4-dimethylpropylenedioxythiophene) (PProDOT-Me2). This closed electrochemical cell allows the study of the doping induced subband-gap features (polaronic and bipolaronic modes) in these easily oxidized and highly redox switchable polymers. We also study the changes in cell spectra as a function of polymer thickness and investigate strategies to obtain cleaner spectra, minimizing the contributions of water and gel electrolyte features.

Polymer compositions, polymer films and methods and precursors for forming same

Science.gov (United States)

Klaehn, John R; Peterson, Eric S; Orme, Christopher J

2013-09-24

Stable, high performance polymer compositions including polybenzimidazole (PBI) and a melamine-formaldehyde polymer, such as methylated, poly(melamine-co-formaldehyde), for forming structures such as films, fibers and bulky structures. The polymer compositions may be formed by combining polybenzimidazole with the melamine-formaldehyde polymer to form a precursor. The polybenzimidazole may be reacted and/or intertwined with the melamine-formaldehyde polymer to form the polymer composition. For example, a stable, free-standing film having a thickness of, for example, between about 5 .mu.m and about 30 .mu.m may be formed from the polymer composition. Such films may be used as gas separation membranes and may be submerged into water for extended periods without crazing and cracking. The polymer composition may also be used as a coating on substrates, such as metal and ceramics, or may be used for spinning fibers. Precursors for forming such polymer compositions are also disclosed.

Effect of beam expansion loss in a carbon nanotube-doped PVA film on passively mode-locked erbium-doped fiber lasers with different feedback ratios

International Nuclear Information System (INIS)

Cheng, Kuang-Nan; Chi, Yu-Chieh; Cheng, Chih-Hsien; Lin, Yung-Hsiang; Lo, Jui-Yung; Lin, Gong-Ru

2014-01-01

The effect of beam expansion induced divergent loss in a single-wall carbon nanotube (SWCNT) doped polyvinyl alcohol (PVA) based ultrafast saturable absorber (SA) film thickness on the passive mode-locking (PML) performances of erbium-doped fiber lasers are demonstrated. The variation on the PML pulsewidth of the EDFL is discussed by changing the SWCNT-PVA SA film thicknesses, together with adjusting the pumping power and the intra-cavity feedback ratio. An almost 6 dB increment of divergent loss when enlarging the SWCNT-PVA based SA film thickness from 30–130 µm is observed. When shrinking the SA thickness to 30 µm at the largest pumping power of 52.5 mW, the optical spectrum red-shifts to 1558.8 nm with its 3 dB spectral linewidth broadening up to 2.7 nm, while the pulse has already entered the soliton regime with multi-order Kelly sidebands aside the spectral shoulder. The soliton pulsewidth is as short as 790 fs, which is much shorter than those obtained with other thicker SWCNT doped PVA polymer film based SAs; therefore, the peak power from the output of the PML-EDFL is significantly enlarged accompanied by a completely suppressed residual continuous-wave level to achieve the largest on/off extinction ratio. The main mechanism of pulse shortening with reducing thickness of SWCNT doped PVA polymer film based SA is attributed to the limited beam expansion as well as the enlarged modulation depth, which results in shortened soliton pulsewidth with a clean dc background, and broadened spectrum with enriched Kelly sidebands. The increase of total SWCNT amount in the thicker SA inevitably causes a higher linear absorption; hence, the mode-locking threshold also rises accordingly. By enlarging pumping power from 38.5–52.5 mW, the highest ascent on pulse extinction of up to 32 dB is observed among all kinds of feedback conditions. Nevertheless, the enlargement on the extinction slightly decays with increasing the feedback ratio from 30–90

Enhanced flux-pinning in fluorine-free MOD YBCO films by chemical doping

Energy Technology Data Exchange (ETDEWEB)

Wang, W.T.; Pu, M.H.; Yang, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhang, H. [Department of Physics, Peking University, Beijing 100871 (China); Cheng, C.H. [Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia); Zhao, Y., E-mail: yzhao@swjtu.edu.c [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Superconductivity Research Group, School of Materials Science and Engineering, University of New South Wale, Sydney, 2052 NSW (Australia)

2010-11-01

YBCO films without and with dilute cobalt and zinc doping were prepared on (0 0 l) LaAlO{sub 3} substrate by non-fluorine metal organic deposition method. Effects of dilute cobalt and zinc doping on biaxial texture, microstructure and flux-pinning properties of YBCO films were investigated. The surface density and smoothness of the doped YBCO films have been distinctly improved compared with that of the pure film. Dilute cobalt- and zinc-doped YBCO films exhibit significantly enhanced J{sub c} values in the magnetic field. The best result is achieved in the cobalt-doped YBCO film. At 77 K, J{sub c} values of cobalt-doped film are 1.7 and 5.4 times higher than that of pure film in 0.5 T and 1.5 T, respectively. These results strongly suggest that dilute cobalt and zinc doping is a promising way to increase the current carrying capability of YBCO films.

Relation between secondary doping and phase separation in PEDOT:PSS films

Energy Technology Data Exchange (ETDEWEB)

Donoval, Martin; Micjan, Michal; Novota, Miroslav; Nevrela, Juraj; Kovacova, Sona; Pavuk, Milan; Juhasz, Peter; Jagelka, Martin; Kovac, Jaroslav; Jakabovic, Jan [Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, Bratislava 81219 (Slovakia); Cigan, Marek [Institute of Chemistry, Faculty of Natural Science, Comenius University, Mlynska dolina CH-2, Ilkovicova 6, Bratislava 84215 (Slovakia); Weis, Martin, E-mail: martin.weis@stuba.sk [Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, Bratislava 81219 (Slovakia)

2017-02-15

Highlights: • Surface morphology of highly conductive polymer was investigated. • Phase separation due to secondary doping is an origin of conductivity enhancement. • Phase separation is not dependent on secondary dopant type. - Abstract: Conductive copolymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been proposed as an alternative to transparent conductive oxides because of its flexibility, transparency, and low-cost production. Four different secondary dopants, namely N,N-dimethylformamide, ethyleneglycol, sorbitol, and dimethyl sulfoxide, have been used to improve the conductivity. The relation between the structure changes and conductivity enhancement is studied in detail. Atomic force microscopy study of the thin film surface reveals the phase separation of PEDOT and PSS. We demonstrate that secondary doping induces the phase separation as well as the conductivity enhancement.

Microstructural and electrical properties of PVA/PVP polymer blend films doped with cupric sulphate

Energy Technology Data Exchange (ETDEWEB)

Hemalatha, K.; Gowtham, G. K.; Somashekarappa, H., E-mail: drhssappa@gmail.com [Department of Physics, Yuvaraja’s College, University of Mysore, Mysore 570 005, Karnataka (India); Mahadevaiah,; Urs, G. Thejas; Somashekar, R. [Department of Studies in Material Sciences, University of Mysore, Mysore 570 006, Karnataka (India)

2016-05-23

A series of polyvinyl alcohol (PVA)/polyvinyl pyrrolidone (PVP) polymer blends added with different concentrations of cupric sulphate (CuSO{sub 4}) were prepared by solution casting method and were subjected to X-ray diffraction (XRD) and Ac conductance measurements. An attempt has been made to study the changes in crystal imperfection parameters in PVA/PVP blend films with the increase in concentration of CuSO{sub 4}. Results show that decrease in micro crystalline parameter values is accompanied with increase in the amorphous content in the film which is the reason for film to have more flexibility, biodegradability and good ionic conductivity. AC conductance measurements in these films show that the conductivity increases as the concentration of CuSO{sub 4} increases. These films were suitable for electro chemical applications.

Investigations of gamma irradiation on the properties of luminescent films of polycarbonate(PC) matrix doped with europium complex [Eu(tta)3(H2O)2

International Nuclear Information System (INIS)

Forster, Pedro L.; Lugao, Ademar B.; Martins, Natalia A.; Egute, Nayara S.; Parra, Duclerc F.; Brito, Hermi F.

2009-01-01

Luminescent lanthanide complexes have attracted much recent interest for their application as luminescent materials. The combination of unique spectroscopic properties from rare earth complexes associated to physical and chemical intrinsic properties of polymers became more attractive in the last years. A number of advantages of these substances have been reported or realized over the much studied conjugated polymers and nonlanthanide. Luminescent films composed by diaquatris(thenoyltrifluoroacetonate)europium(III) complex [Eu(tta) 3 (H 2 O) 2 ] doped into a polycarbonate (PC) matrix were prepared and irradiated at gamma radiation with 5, 10, and 20 kGy. The PC polymer was doped with 1% (w/w) of the Eu 3+ complex. The thermal properties was investigated by utilization of differential scanning calorimeter (DSC) changes in thermal stability was observed due to the addition of doping agent into the polycarbonate matrix. Changes in photophysical properties due of gamma radiation was observed by emission, excitation spectra and fourier transformed infrared spectra (FTIR). Based on the emission spectra of PC:1% Eu(tta)3 film were observed the characteristic bands arising from the 5 D 0 7 F J transitions of Eu 3+ ion (J=0-4), indicating the ability to obtain the luminescence films. (author)

VOx effectively doping CVD-graphene for transparent conductive films

Science.gov (United States)

Ji, Qinghua; Shi, Liangjing; Zhang, Qinghong; Wang, Weiqi; Zheng, Huifeng; Zhang, Yuzhi; Liu, Yangqiao; Sun, Jing

2016-11-01

Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VOx doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86-90%. The optimized VOx-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VOx can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VOx species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VOx doped graphene is expected to be a promising candidate for transparent conductive film purposes.

Effects of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide doped with a conductive polymer

International Nuclear Information System (INIS)

Zeng, Jian-Jhou; Lin, Yow-Jon; Ruan, Cheng-He; Lin, Jian-Huang

2013-01-01

The effect of reduction temperature on the optoelectronic properties of diodes based on n-type Si and reduced graphene oxide (RGO) doped with a conductive polymer [poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)] was examined in this study. It is found that conductivity of RGO-doped PEDOT:PSS films increases with increasing reduction temperature of graphene oxide (GO) sheets. The improvement of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, the ideality factor of n-type Si/RGO-doped PEDOT:PSS diodes decreases with increasing reduction temperature of GO sheets. The device-performance improvement originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film. In addition, note that a suitable reduction temperature is an important issue for improving the device performance. (paper)

Emission properties of polymer composites doped with Er3+:Y2O3 nanopowders

Science.gov (United States)

Anders, Krzysztof; Jusza, Anna; Baran, Magdalena; Lipińska, Ludwika; Piramidowicz, Ryszard

2012-10-01

In this work we report the recent results of our investigation on visible emission properties of the PMMA-based polymer nanocomposites doped with Er3+:Y2O3 nanopowders. The set of active nanopowders, and polymer films, differing in active ions concentration, was characterized with respect of their luminescent properties in the green spectral range, available to a limited extent for semiconductor lasers. In particular - the concentration dependent emission spectra and fluorescence dynamics profiles were measured under direct (single photon) and up-converted excitation, enabling the comparison of luminescent properties of developed nanocomposite materials and original nanopowders, optimization of erbium dopant concentration as well as discussion of excitation mechanisms and analysis of the efficiency of depopulation processes.

Optical modelling of photoluminescence emitted by thin doped films

International Nuclear Information System (INIS)

Pigeat, P.; Easwarakhanthan, T.; Briancon, J.L.; Rinnert, H.

2011-01-01

Photoluminescence (PL) spectra emitted by doped films are deformed owing to film thickness-dependent wave interference. This hampers knowing well their PL generating mechanisms as well as designing photonic devices with suitable geometries that improve their PL efficiency. We develop in this paper an energy model for PL emitted by doped films considering the interaction between the wavelength-differing incident standing and emitted waves, their energy transfer in-between, and the interferences undergone by both. The film optical constants are estimated fitting the model to the measured PL. This simple model has thus allowed us to interpret the evolution of PL emitted by Er-doped AlN films prepared on Si substrates by reactive magnetron sputtering. The shapes, the amplitudes, and the illusive sub-spectral features of the PL spectra depend essentially on the film thickness. The model further predicts high sensitivity for PL emitted by non-homogenously doped stacked-films to incident light wavelengths and film-thickness variations. This property has potential applications in tracking wavelength variations and in measuring physical quantities producing thickness variations. This model may be used to optimise PL efficiency of photonic devices through different film geometries and optical properties.

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Xue Zhang

2017-07-01

Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

Development of Functional Thin Polymer Films Using a Layer-by-Layer Deposition Technique.

Science.gov (United States)

Yoshida, Kentaro

2017-01-01

Functional thin films containing insulin were prepared using layer-by-layer (LbL) deposition of insulin and negatively- or positively-charged polymers on the surface of solid substrates. LbL films composed of insulin and negatively-charged polymers such as poly(acrylic acid) (PAA), poly(vinylsulfate) (PVS), and dextran sulfate (DS) were prepared through electrostatic affinity between the materials. The insulin/PAA, insulin/PVS, and insulin/DS films were stable in acidic solutions, whereas they decomposed under physiological conditions as a result of a change in the net electric charge of insulin from positive to negative. Interestingly, the insulin-containing LbL films were stable even in the presence of a digestive-enzyme (pepcin) at pH 1.4 (stomach pH). In contrast, LbL films consisting of insulin and positively-charged polymers such as poly(allylamine hydrochloride) (PAH) decomposed in acidic solutions due to the positive charges of insulin generated in acidic media. The insulin-containing LbL films can be prepared not only on the surface of flat substrates, such as quartz slides, but also on the surface of microparticles, such as poly(lactic acid) (PLA) microbeads. Thus, insulin-containing LbL film-coated PLA microbeads can be handled as a powder. In addition, insulin-containing microcapsules were prepared by coating LbL films on the surface of insulin-doped calcium carbonate (CaCO 3 ) microparticles, followed by dissolution of the CaCO 3 core. The release of insulin from the microcapsules was accelerated at pH 7.4, whereas it was suppressed in acidic solutions. These results suggest the potential use of insulin-containing microcapsules in the development of oral formulations of insulin.

Fabrication of flexible polymer dispersed liquid crystal films using conducting polymer thin films as the driving electrodes

International Nuclear Information System (INIS)

Kim, Yang-Bae; Park, Sucheol; Hong, Jin-Who

2009-01-01

Conducting polymers exhibit good mechanical and interfacial compatibility with plastic substrates. We prepared an optimized coating formulation based on poly(3,4-ethylenedioxythiophene) (PEDOT) and 3-(trimethoxysilyl)propyl acrylate and fabricated a transparent electrode on poly(ethylene terephthalate) (PET) substrate. The surface resistances and transmittance of the prepared thin films were 500-600 Ω/□ and 87% at 500 nm, respectively. To evaluate the performance of the conducting polymer electrode, we fabricated a five-layer flexible polymer-dispersed liquid crystal (PDLC) device as a PET-PEDOT-PDLC-PEDOT-PET flexible film. The prepared PDLC device exhibited a low driving voltage (15 VAC), high contrast ratio (60:1), and high transmittance in the ON state (60%), characteristics that are comparable with those of conventional PDLC film based on indium tin oxide electrodes. The fabrication of conducting polymer thin films as the driving electrodes in this study showed that such films can be used as a substitute for an indium tin oxide electrode, which further enhances the flexibility of PDLC film

Doping graphene films via chemically mediated charge transfer

Directory of Open Access Journals (Sweden)

Ishikawa Ryousuke

2011-01-01

Full Text Available Abstract Transparent conductive films (TCFs are critical components of a myriad of technologies including flat panel displays, light-emitting diodes, and solar cells. Graphene-based TCFs have attracted a lot of attention because of their high electrical conductivity, transparency, and low cost. Carrier doping of graphene would potentially improve the properties of graphene-based TCFs for practical industrial applications. However, controlling the carrier type and concentration of dopants in graphene films is challenging, especially for the synthesis of p-type films. In this article, a new method for doping graphene using the conjugated organic molecule, tetracyanoquinodimethane (TCNQ, is described. Notably, TCNQ is well known as a powerful electron accepter and is expected to favor electron transfer from graphene into TCNQ molecules, thereby leading to p-type doping of graphene films. Small amounts of TCNQ drastically improved the resistivity without degradation of optical transparency. Our carrier doping method based on charge transfer has a huge potential for graphene-based TCFs.

Controlling Film Morphology in Conjugated Polymer

Science.gov (United States)

Park, Lee Y.; Munro, Andrea M.; Ginger, David S.

2009-01-01

We study the effects of patterned surface chemistry on the microscale and nanoscale morphology of solution-processed donor/acceptor polymer-blend films. Focusing on combinations of interest in polymer solar cells, we demonstrate that patterned surface chemistry can be used to tailor the film morphology of blends of semiconducting polymers such as poly-[2-(3,7-dimethyloctyloxy)-5-methoxy-p-phenylenevinylene] (MDMO-PPV), poly-3-hexylthiophene (P3HT), poly[(9,9-dioctylflorenyl-2,7-diyl)-co-benzothiadiazole)] (F8BT), and poly(9,9-dioctylfluorene-co-bis-N,N’-(4-butylphenyl)-bis-N,N’-phenyl-1,4-phenylendiamine) (PFB) with the fullerene derivative, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). We present a method for generating patterned, fullerene-terminated monolayers on gold surfaces, and use microcontact printing and Dip-Pen Nanolithography (DPN) to pattern alkanethiols with both micro- and nanoscale features. After patterning with fullerenes and other functional groups, we backfill the rest of the surface with a variety of thiols to prepare substrates with periodic variations in surface chemistry. Spin coating polymer:PCBM films onto these substrates, followed by thermal annealing under nitrogen, leads to the formation of structured polymer films. We characterize these films with Atomic Force Microscopy (AFM), Raman spectroscopy, and fluorescence microscopy. The surface patterns are effective in guiding phase separation in all of the polymer:PCBM systems investigated, and lead to a rich variety of film morphologies that are inaccessible with unpatterned substrates. We demonstrate our ability to guide pattern formation in films thick enough of be of interest for actual device applications (up to 200 nm in thickness) using feature sizes as small as 100 nm. Finally, we show that the surface chemistry can lead to variations in film morphology on length scales significantly smaller than those used in generating the original surface patterns. The variety of

Electrically actuatable doped polymer flakes and electrically addressable optical devices using suspensions of doped polymer flakes in a fluid host

Science.gov (United States)

Trajkovska-Petkoska, Anka; Jacobs, Stephen D.; Marshall, Kenneth L.; Kosc, Tanya Z.

2010-05-11

Doped electrically actuatable (electrically addressable or switchable) polymer flakes have enhanced and controllable electric field induced motion by virtue of doping a polymer material that functions as the base flake matrix with either a distribution of insoluble dopant particles or a dopant material that is completely soluble in the base flake matrix. The base flake matrix may be a polymer liquid crystal material, and the dopants generally have higher dielectric permittivity and/or conductivity than the electrically actuatable polymer base flake matrix. The dopant distribution within the base flake matrix may be either homogeneous or non-homogeneous. In the latter case, the non-homogeneous distribution of dopant provides a dielectric permittivity and/or conductivity gradient within the body of the flakes. The dopant can also be a carbon-containing material (either soluble or insoluble in the base flake matrix) that absorbs light so as to reduce the unpolarized scattered light component reflected from the flakes, thereby enhancing the effective intensity of circularly polarized light reflected from the flakes when the flakes are oriented into a light reflecting state. Electro-optic devices contain these doped flakes suspended in a host fluid can be addressed with an applied electric field, thus controlling the orientation of the flakes between a bright reflecting state and a non-reflecting dark state.

Oxygen diffusion in bilayer polymer films

DEFF Research Database (Denmark)

Poulsen, Lars; Zebger, Ingo; Tofte, Jannik Pentti

2004-01-01

Experiments to quantify oxygen diffusion have been performed on polymer samples in which a film of poly(ethylene-co-norbornene) was cast onto a film of polystyrene which, in turn, was cast onto an oxygen-impermeable substrate. In the technique employed, the time evolution of oxygen transport...... through the film of poly(ethylene-co-norbornene) and into the polystyrene film was monitored using the phosphorescence of singlet oxygen as a spectroscopic probe. To analyze the data, it was necessary to solve Fick's second law of diffusion for both polymer films. Tractable analytical and numerical...

Pure and Sn-doped ZnO films produced by pulsed laser deposition

DEFF Research Database (Denmark)

Holmelund, E.; Schou, Jørgen; Tougaard, S.

2002-01-01

A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...

BF3-doped polyaniline: A novel conducting polymer

Indian Academy of Sciences (India)

During the past two decades, both fundamental and applied research in conducting polymers has grown enormously [1]. Polyaniline (PANI) owing to its ease of synthe- sis, remarkable environmental stability, and high conductivity in the doped form, has remained one of the most thoroughly studied conducting polymers.

Sm 3+-doped polymer optical waveguide amplifiers

Science.gov (United States)

Huang, Lihui; Tsang, Kwokchu; Pun, Edwin Yue-Bun; Xu, Shiqing

2010-04-01

Trivalent samarium ion (Sm 3+) doped SU8 polymer materials were synthesized and characterized. Intense red emission at 645 nm was observed under UV laser light excitation. Spectroscopic investigations show that the doped materials are suitable for realizing planar optical waveguide amplifiers. About 100 μm wide multimode Sm 3+-doped SU8 channel waveguides were fabricated using a simple UV exposure process. At 250 mW, 351 nm UV pump power, a signal enhancement of ˜7.4 dB at 645 nm was obtained for a 15 mm long channel waveguide.

Electrochemical Behavior of TiO2 Nanoparticle Doped WO3 Thin Films

Directory of Open Access Journals (Sweden)

Suvarna R. Bathe

2014-01-01

Full Text Available Nanoparticle TiO2 doped WO3 thin films by pulsed spray pyrolysis technique have been studied on fluorine tin doped (FTO and glass substrate. XRD shows amorphous nature for undoped and anatase phase of TiO2 having (101 plane for nanoparticle TiO2 doped WO3 thin film. SEM shows microfibrous reticulated porous network for WO3 with 600 nm fiber diameter and nanocrystalline having size 40 nm for TiO2 nanoparticle doped WO3 thin film. TiO2 nanoparticle doped WO3 thin film shows ~95% reversibility due to may be attributed to nanocrystalline nature of the film, which helpful for charge insertion and deinsertion process. The diffusion coefficient for TiO2 nanoparticle doped WO3 film is less than undoped WO3.

Pulsed Laser Deposition of Polymers Doped with Fluorescent Probes. Application to Environmental Sensors

International Nuclear Information System (INIS)

Rebollar, E; Villavieja, Mm; Gaspard, S; Oujja, M; Corrales, T; Georgiou, S; Domingo, C; Bosch, P; Castillejo, M

2007-01-01

Pulsed laser deposition (PLD) has been used to obtain thin films of poly(methyl methacrylate) and polystyrene doped with fluorescent probes, amino aromatic compounds S5 and S6, that could be used to sense the presence of contaminating environmental agents. These dopants both in solution and inserted in polymeric films are sensitive to changes in pH, viscosity and polarity, increasing their fluorescence emission and/or modifying the position of their emission band. Films deposits on quartz substrates, obtained by irradiating targets with a Ti:Sapphire laser (800 nm, 120 fs pulse) were analyzed by optical and Environmental Scanning Electron Microscopy, Fluorescence Microscopy, Laser-Induced Fluorescence, Micro Raman Spectroscopy and Flow Injection Analysis-Mass Spectrometry. The transfer of the polymer and the probe to the substrate is observed to be strongly dependent on the optical absorption coefficient of the polymeric component of the target at the irradiation wavelength

Morphology and thermal stability of Ti-doped copper nitride films

International Nuclear Information System (INIS)

Fan Xiaoyan; Wu Zhiguo; Li Huajun; Geng Baisong; Li Chun; Yan Pengxun

2007-01-01

A weakly Ti-doped copper nitride (Cu 3 N) film was prepared by cylindrical magnetron sputtering. The XPS results indicate that Ti atoms do not substitute for the Cu atoms but probably locate at the grain boundaries. The columnar grains size is about half of that of the undoped Cu 3 N film and the surface is smoother. For weakly Ti-doped Cu 3 N films, a dense layer appears on top of the columnar crystals. The RMS of the Cu film formed by annealing of the weakly Ti-doped Cu 3 N film is more than twice larger than that of the film before annealing. Compared with the undoped Cu 3 N film, it possesses fine thermal stability both in vacuum and in atmosphere

Conductive Langmuir-Blodgett films. Doping with iodine or self-doping?

International Nuclear Information System (INIS)

Bourgoin, Jean-Philippe

1991-01-01

In this research thesis dealing with molecular architecture, the author reports the testing of two strategies aiming at reducing the importance of defects in conductive Langmuir-Blodgett films, and at enabling the production of conductive mono-molecular layer. According to the first strategy, conductive films are obtained after doping based on the use of iodine vapours of an insulating precursor film of molecules derived from BEDT-TTF. The so-produced films display a high conductivity and can be used as sensitive elements in gas sensors, but remain macroscopically insulating, probably because molecular reorganisation, as shown by a study based on different techniques (IR and UV linear dichroism, Raman spectroscopy, X ray diffraction), generates too many defects. The second strategy, self-doping, is based on a mixing of two derivatives of the same electro-active nucleus (the TCNQ, tetracyanoquinodimethane), an amphiphilic one and a semi-amphiphilic one. This strategy opens new perspectives in molecular engineering as it is a general way to produce conductive LB films from TCNQ [fr

Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

KAUST Repository

Zhang, Bo

2017-05-22

Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

Optical limiting study of C60 doped (dimethylandicarboxylate) /poly (ethylacetylenecarboxy)polymer

International Nuclear Information System (INIS)

Zidan, M.D.; Allaf, A.W.

2011-10-01

The optical limiting action of poly(dimethylacetylendicarboxylate) polymer and poly(ethylacetylendicarboxylate) polymer doped with fullerene C 6 0 has been investigated under irradiation with 10 ns laser pulse at 532 nm. The optical limiting measurements were performed at different doping concentrations. The threshold limiting fluence decreased at high doping concentrations, at the same time the optical limiting efficiency has been increased. An explanation based on the combination of two-photon absorption and reverse saturable absorption was proposed for its nonlinear optical absorption behavior. (author)

Efficient photocatalytic decolorization of some textile dyes using Fe ions doped polyaniline film on ITO coated glass substrate

International Nuclear Information System (INIS)

Haspulat, Bircan; Gülce, Ahmet; Gülce, Handan

2013-01-01

Highlights: • The PANI/Fe film as photocatalyst was used for the first time. • It was possible to modify the surface roughness and wettability of the PANI films. • The photocatalytic decolorization of four dyes has been investigated. • The photocatalytical activity of the PANI matrix was increased by adding Fe ions. -- Abstract: In this study, the photocatalytic decolorization of four commercial textile dyes with different structures has been investigated using electrochemically synthesized polyaniline and Fe ions doped polyaniline on ITO coated glass substrate as photocatalyst in aqueous solution under UV irradiation for the first time. Scanning electron microscopy, atomic force microscopy, FT-IR spectra, UV–vis spectroscopy measurements were used to characterize the electrochemically synthesized polymer film photocatalyst. Film hydrophilicity was assessed from contact angle measurements. The results show that both of the polymer films exhibit good photocatalytic performance. Surprisingly, it was determined that by using Fe(II) ions during polymerization, it is possible to modify the surface roughness and wettability of the produced polyaniline films which favors their photocatalytic activity in water-based solutions. All four of the used dyes (methylene blue, malachite green, methyl orange and methyl red) were completely decolorizated in 90 min of irradiation under UV light by using Fe ions doped polyaniline at the dye concentration of 1.5 × 10 −5 M, while the decolorization of those dyes were between 43% and 83% by using polyaniline as photocatalyst. Hence, it may be a viable technique for the safe disposal of textile wastewater into waste streams

Polymer surfaces, interfaces and thin films

Energy Technology Data Exchange (ETDEWEB)

Stamm, M [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

1996-11-01

Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

Polymer surfaces, interfaces and thin films

International Nuclear Information System (INIS)

Stamm, M.

1996-01-01

Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs

Electrochemical impedance spectroscopy of dodecylsulphate doped polypyrrole films in the dark and under illumination

Directory of Open Access Journals (Sweden)

Martini Milena

2000-01-01

Full Text Available The morphology, thickness, oxidation and illumination effects in dodecylsulphate doped polypyrrole films can be qualitatively observed by EIS and consist in variations of interfacial and bulk resistances and capacitances of a proposed equivalent circuit. The circuit well with the measured spectra of films obtained with 190 mC cm-2 of synthesis charge density. For thinner films the calculated values observed by electrochemical impedance spectroscopy (EIS deviate probably due to the absence of diffusion effects. The oxidation of the films diminishes the total impedance over the entire frequency range. The morphology effects are also observed in the entire spectra. The illumination effects are reversible and are observed as expected only in the reduced form of the polymer. The illumination reduces the internal resistance and the space-charge capacitance and increases the charge transfer resistance and the double layer capacitance.

Recent Development of Nanomaterial-Doped Conductive Polymers

Science.gov (United States)

Asyraf, Mohammad; Anwar, Mahmood; Sheng, Law Ming; Danquah, Michael K.

2017-12-01

Conductive polymers (CPs) have received significant research attention in material engineering for applications in microelectronics, micro-scale sensors, electromagnetic shielding, and micro actuators. Numerous research efforts have been focused on enhancing the conductivity of CPs by doping. Various conductive materials, such as metal nanoparticles and carbon-based nanoparticles, and structures, such as silver nanoparticles and graphene nanosheets, have been converted into polypyrrole and polypyrrole compounds as the precursors to developing hybrids, conjugates, or crystal nodes within the matrix to enhance the various structural properties, particularly the electrical conductivity. This article reviews nanomaterial doping of conductive polymers alongside technological advancements in the development and application of nanomaterial-doped polymeric systems. Emphasis is given to conductive nanomaterials such as nano-silver particles and carbon-based nanoparticles, graphene nano-sheets, fullerene, and carbon nanotubes (CNT) as dopants for polypyrrole-based CPs. The nature of induced electrical properties including electromagnetic absorption, electrical capacitance, and conductivities of polypyrrole systems is also discussed. The prospects and challenges associated with the development and application of CPs are also presented.

Radio frequency sputter deposition of high-quality conductive and transparent ZnO:Al films on polymer substrates for thin film solar cells applications

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)], E-mail: susanamaria.fernandez@ciemat.es; Martinez-Steele, A.; Gandia, J.J. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica (GRIFO), Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala. Campus Universitario, 28871 Alcala de Henares, Madrid (Spain)

2009-03-31

Thick aluminum-doped zinc oxide films were deposited at substrate temperatures from 100 {sup o}C to room temperature on polyethylene terephthalate by radio frequency magnetron sputtering, varying the deposition parameters such as radio frequency power and working pressure. Structural, optical and electrical properties were analyzed using an x-ray diffractometer, a spectrophotometer and a four-point probe, respectively. Films were polycrystalline showing a strong preferred c-axis orientation (002). The best optical and electrical results were achieved using a substrate temperature of 100 {sup o}C. Furthermore, high transmittances close to 80% in the visible wavelength range were obtained for those films deposited at the lowest Argon pressure used of 0.2 Pa. In addition, resistivities as low as 1.1 x 10{sup -3} {omega} cm were reached deposited at a RF power of 75 W. Finally, a comparison of the properties of the films deposited on polymer and glass substrates was performed, obtaining values of the figure of merit for the films on polymer comparable to those obtained on glass substrates, 17,700 {omega}{sup -1} cm{sup -1} vs 14,900 {omega}{sup -1} cm{sup -1}, respectively.

Radio frequency sputter deposition of high-quality conductive and transparent ZnO:Al films on polymer substrates for thin film solar cells applications

International Nuclear Information System (INIS)

Fernandez, S.; Martinez-Steele, A.; Gandia, J.J.; Naranjo, F.B.

2009-01-01

Thick aluminum-doped zinc oxide films were deposited at substrate temperatures from 100 o C to room temperature on polyethylene terephthalate by radio frequency magnetron sputtering, varying the deposition parameters such as radio frequency power and working pressure. Structural, optical and electrical properties were analyzed using an x-ray diffractometer, a spectrophotometer and a four-point probe, respectively. Films were polycrystalline showing a strong preferred c-axis orientation (002). The best optical and electrical results were achieved using a substrate temperature of 100 o C. Furthermore, high transmittances close to 80% in the visible wavelength range were obtained for those films deposited at the lowest Argon pressure used of 0.2 Pa. In addition, resistivities as low as 1.1 x 10 -3 Ω cm were reached deposited at a RF power of 75 W. Finally, a comparison of the properties of the films deposited on polymer and glass substrates was performed, obtaining values of the figure of merit for the films on polymer comparable to those obtained on glass substrates, 17,700 Ω -1 cm -1 vs 14,900 Ω -1 cm -1 , respectively

Bulk Heterojunction versus Diffused Bilayer: The Role of Device Geometry in Solution p-Doped Polymer-Based Solar Cells.

Science.gov (United States)

Loiudice, Anna; Rizzo, Aurora; Biasiucci, Mariano; Gigli, Giuseppe

2012-07-19

We exploit the effect of molecular p-type doping of P3HT in diffused bilayer (DB) polymer solar cells. In this alternative device geometry, the p-doping is accomplished in solution by blending the F4-TCNQ with P3HT. The p-doping both increases the film conductivity and reduces the potential barrier at the interface with the electrode. This results in an excellent power conversion efficiency of 4.02%, which is an improvement of ∼48% over the p-doped standard bulk heterojunction (BHJ) device. Combined VOC-light intensity dependence measurements and Kelvin probe force microscopy reveal that the DB device configuration is particularly advantageous, if compared to the conventional BHJ, because it enables optimization of the donor and acceptor layers independently to minimize the effect of trapping and to fully exploit the improved transport properties.

Graphene Oxide Monolayer as a Compatibilizer at the Polymer-Polymer Interface for Stabilizing Polymer Bilayer Films against Dewetting.

Science.gov (United States)

Kim, Tae-Ho; Kim, Hyeri; Choi, Ki-In; Yoo, Jeseung; Seo, Young-Soo; Lee, Jeong-Soo; Koo, Jaseung

2016-12-06

We investigate the effect of adding graphene oxide (GO) sheets at the polymer-polymer interface on the dewetting dynamics and compatibility of immiscible polymer bilayer films. GO monolayers are deposited at the poly(methyl methacrylate) (PMMA)-polystyrene (PS) interface by the Langmuir-Schaefer technique. GO monolayers are found to significantly inhibit the dewetting behavior of both PMMA films (on PS substrates) and PS films (on PMMA substrates). This can be interpreted in terms of an interfacial interaction between the GO sheets and these polymers, which is evidenced by the reduced contact angle of the dewet droplets. The favorable interaction of GO with both PS and PMMA facilitates compatibilization of the immiscible polymer bilayer films, thereby stabilizing their bilayer films against dewetting. This compatibilization effect is verified by neutron reflectivity measurements, which reveal that the addition of GO monolayers broadens the interface between PS and the deuterated PMMA films by 2.2 times over that of the bilayer in the absence of GO.

Investigation Performance and Mechanisms of Inverted Polymer Solar Cells by Pentacene Doped P3HT : PCBM

Directory of Open Access Journals (Sweden)

Hsin-Ying Lee

2014-01-01

Full Text Available The inverted polymer solar cells (PSCs with pentacene-doped P3HT : PCBM absorption layers were fabricated. It was demonstrated that the pentacene doping modulated the electron mobility and the hole mobility in the resulting absorption layer. Furthermore, by varying the doping content, the optimal carrier mobility balance could be obtained. In addition, the pentacene doping led to an improvement in the crystallinity of the resulting films and made an enhancement in the light absorption, which was partly responsible for the performance improvement of the solar cells. Using the space-charge-limited current (SCLC method, it was determined that the balanced carrier mobility (μh/μe=1.000 was nearly achieved when a pentacene doping ratio of 0.065 by weight was doped into the P3HT : PCBM : pentacene absorption layer. Compared with the inverted PSCs without the pentacene doping, the short circuit current density and the power conversion efficiency of the inverted PSCs with the pentacene doping ratio of 0.065 were increased from 9.73 mA/cm2 to 11.26 mA/cm2 and from 3.39% to 4.31%, respectively.

Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

International Nuclear Information System (INIS)

Rahman, Airul Azha Abd; Umar, Akrajas Ali; Salleh, Muhamad Mat; Chen, Xiaomei; Oyama, Munetaka

2016-01-01

The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m -1 K -2 ) and 10 μV/K (and 19.5 μW m -1 K -2 ), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50

Polymer Solar Cells with Efficiency >10% Enabled via a Facile Solution-Processed Al-Doped ZnO Electron Transporting Layer

KAUST Repository

Jagadamma, Lethy Krishnan

2015-04-22

A facile and low-temperature (125 °C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates is described. The ammonia-treatment of the aqueous AZO nanoparticle solution produces compact, crystalline, and smooth thin films, which retain the aluminum doping, and eliminates/reduces the native defects by nitrogen incorporation, making them good electron transporters and energetically matched with the fullerene acceptor. It is demonstrated that highly efficient solar cells can be achieved without the need for additional surface chemical modifications of the buffer layer, which is a common requirement for many metal oxide buffer layers to yield efficient solar cells. Also highly efficient solar cells are achieved with thick AZO films (>50 nm), highlighting the suitability of this material for roll-to-roll coating. Preliminary results on the applicability of AZO as electron injection layer in F8BT-based polymer light emitting diode are also presented. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of doping concentration on the structural, morphological, optical and electrical properties of Mn-doped CdO thin films

Directory of Open Access Journals (Sweden)

Manjula N.

2015-12-01

Full Text Available Thin films of manganese-doped cadmium oxide (CdO:Mn with different Mn-doping levels (0, 1, 2, 3 and 4 at.% were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1 preferential orientation. Mn-doping causes a slight shift of the (1 1 1 diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.

VO{sub x} effectively doping CVD-graphene for transparent conductive films

Energy Technology Data Exchange (ETDEWEB)

Ji, Qinghua; Shi, Liangjing [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Zhang, Qinghong [State Key Laboratory of Modification of Chemical Fibers and Polymer Materials, College of Material Science and Engineering, Donghua University, 2999 North Renmin Road, Shanghai 201620 (China); Wang, Weiqi; Zheng, Huifeng [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Zhang, Yuzhi [The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences,1295 Dingxi Road, Shanghai 200050 (China); Liu, Yangqiao, E-mail: yqliu@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Sun, Jing, E-mail: jingsun@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

2016-11-30

Highlights: • Doping process operated easily. • Sheet resistance decreased efficiently after doping. • Sheet resistance of doped graphene is stable after exposed in the air. • Mechanism of doping process is studied. - Abstract: Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VO{sub x} doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86–90%. The optimized VO{sub x}-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VO{sub x} can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VO{sub x} species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VO{sub x} doped graphene is expected to be a promising candidate for transparent conductive film purposes.

Microwave absorption properties of gold nanoparticle doped polymers

DEFF Research Database (Denmark)

Jiang, Chenhui; Ouattara, Lassana; Ingrosso, Chiara

2011-01-01

This paper presents a method for characterizing microwave absorption properties of gold nanoparticle doped polymers. The method is based on on-wafer measurements at the frequencies from 0.5GHz to 20GHz. The on-wafer measurement method makes it possible to characterize electromagnetic (EM) property...... of small volume samples. The epoxy based SU8 polymer and SU8 doped with gold nanoparticles are chosen as the samples under test. Two types of microwave test devices are designed for exciting the samples through electrical coupling and magnetic coupling, respectively. Measurement results demonstrate...... that the nanocomposites absorb a certain amount of microwave energy due to gold nanoparticles. Higher nanoparticle concentration results in more significant absorption effect....

Microwave absorption properties of gold nanoparticle doped polymers

Science.gov (United States)

Jiang, C.; Ouattara, L.; Ingrosso, C.; Curri, M. L.; Krozer, V.; Boisen, A.; Jakobsen, M. H.; Johansen, T. K.

2011-03-01

This paper presents a method for characterizing microwave absorption properties of gold nanoparticle doped polymers. The method is based on on-wafer measurements at the frequencies from 0.5 GHz to 20 GHz. The on-wafer measurement method makes it possible to characterize electromagnetic (EM) property of small volume samples. The epoxy based SU8 polymer and SU8 doped with gold nanoparticles are chosen as the samples under test. Two types of microwave test devices are designed for exciting the samples through electrical coupling and magnetic coupling, respectively. Measurement results demonstrate that the nanocomposites absorb a certain amount of microwave energy due to gold nanoparticles. Higher nanoparticle concentration results in more significant absorption effect.

N-Doped graphene/PEDOT composite films as counter electrodes in DSSCs: Unveiling the mechanism of electrocatalytic activity enhancement

Science.gov (United States)

Paterakis, Georgios; Raptis, Dimitrios; Ploumistos, Alexandros; Belekoukia, Meltiani; Sygellou, Lamprini; Ramasamy, Madeshwaran Sekkarapatti; Lianos, Panagiotis; Tasis, Dimitrios

2017-11-01

A composite film was obtained by layer deposition of N-doped graphene and poly(3,4-ethylenedioxythiophene) (PEDOT) and was used as Pt-free counter electrode for dye-sensitized solar cells. N-doping of graphene was achieved by annealing mixtures of graphene oxide with urea. Various parameters concerning the treatment of graphene oxide-urea mixtures were monitored in order to optimize the electrocatalytic activity in the final solar cell device. These include the mass ratio of components, the annealing temperature, the starting concentration of the mixture in aqueous solution and the spinning rate for film formation. PEDOT was applied by electrodeposition. The homogeneity of PEDOT coverage onto either untreated or thermally annealed graphene oxide-urea film was assessed by imaging (AFM/SEM) and surface techniques (XPS). It was found that PEDOT was deposited in the form of island structures onto untreated graphene oxide-urea film. On the contrary, the annealed film was homogeneously covered by the polymer, acquiring morphology of decreased roughness. An apparent chemical interaction between PEDOT and N-doped graphene flakes was revealed by XPS data, involving potential grafting of PEDOT chains onto graphitic lattice through Csbnd C bonding. In addition, diffusion of nitrogen-containing fragments within the PEDOT layer was found to take place during electrodeposition process, resulting in enhanced interfacial interactions between components. The solar cell with the optimized N-doped graphene/PEDOT composite counter electrode exhibited a power conversion efficiency (η) of 7.1%, comparable within experimental error to that obtained by using a reference Pt counter electrode, which showed a value of 7.0%.

Optical Characterization of Doped Thermoplastic and Thermosetting Polymer-Optical-Fibers

Directory of Open Access Journals (Sweden)

Igor Ayesta

2017-03-01

Full Text Available The emission properties of a graded-index thermoplastic polymer optical fiber and a step-index thermosetting one, both doped with rhodamine 6G, have been studied. The work includes a detailed analysis of the amplified spontaneous emission together with a study of the optical gains and losses of the fibers. The photostability of the emission of both types of fibers has also been investigated. Comparisons between the results of both doped polymer optical fibers are presented and discussed.

Atomic layer deposition of Al-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

2013-01-15

Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

Polarized emission from light-emitting electrochemical cells using uniaxially oriented polymer thin films of poly(9,9-dioctylfluorene-co-bithiophene)

Science.gov (United States)

Miyazaki, Masumi; Sakanoue, Tomo; Takenobu, Taishi

2018-03-01

Uniaxially oriented poly(9,9-dioctylfluorene-co-bithiophene) (F8T2) films were prepared on rubbed polyimide substrates and applied to emitting layers of light-emitting electrochemical cells (LECs). The layered structure of the uniaxially oriented F8T2 film and ionic liquid electrolytes enabled us to demonstrate LEC operations with high anisotropic characteristics both in emission and charge transport. Polarized electroluminescence (EL) from electrochemically induced p-n junctions in the uniaxially oriented F8T2 was obtained. The dichroic ratios of EL were the same as those of photoluminescence, suggesting that the doping process into the oriented F8T2 did not interrupt the polymer ordering. This indicates the usefulness of the layered structure of the polymer/electrolyte for the fabrication of LECs based on highly oriented polymer films. In addition, uniaxially oriented F8T2 was found to show reduced threshold energy in optically pumped amplified spontaneous emission. These demonstrations suggest the advantage of uniaxially oriented polymer-based LECs for potential application in future electrically pumped lasers.

Conjugated Polymer Chains Confined in Vertical Nanocylinders of a Block-Copolymer Film: Preparation, Characterization, and Optoelectronic Function

KAUST Repository

Dong, Ban Xuan; Honmou, Yoshihiro; Komiyama, Hideaki; Furumaki, Shu; Iyoda, Tomokazu; Vacha, Martin

2013-01-01

Hybrid materials composed of phase-separated block copolymer films and conjugated polymers of the phenylenevinylene family (PPV) are prepared. The PPV chains are embedded in vertical cylinders of nanometer diameter in the block-copolymer films. The cylinders span continuously the whole film thickness of 70 nm. Incorporation of the PPV chains into the one-dimensional cylinders leads to modified photoluminescence spectra and to large absorption anisotropy. The hybrid films show electroluminescence from the PPV chains in a simple light-emitting device at minute doping concentrations, and also exhibit a factor of 19 increase in electron transport efficiency along the single PPV chains. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Conjugated Polymer Chains Confined in Vertical Nanocylinders of a Block-Copolymer Film: Preparation, Characterization, and Optoelectronic Function

KAUST Repository

Dong, Ban Xuan

2013-01-15

Hybrid materials composed of phase-separated block copolymer films and conjugated polymers of the phenylenevinylene family (PPV) are prepared. The PPV chains are embedded in vertical cylinders of nanometer diameter in the block-copolymer films. The cylinders span continuously the whole film thickness of 70 nm. Incorporation of the PPV chains into the one-dimensional cylinders leads to modified photoluminescence spectra and to large absorption anisotropy. The hybrid films show electroluminescence from the PPV chains in a simple light-emitting device at minute doping concentrations, and also exhibit a factor of 19 increase in electron transport efficiency along the single PPV chains. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improvement of physical properties of ZnO thin films by tellurium doping

Energy Technology Data Exchange (ETDEWEB)

Sönmezoğlu, Savaş, E-mail: svssonmezoglu@kmu.edu.tr; Akman, Erdi

2014-11-01

Highlights: • We report the synthesis of tellurium-doped zinc oxide (Te–ZnO) thin films using sol–gel method. • Highly c-axis oriented Te-doped ZnO thin films were grown on FTO glasses as substrate. • 1.5% Te-doping ratio could improve the physical properties of ZnO thin films. - Abstract: This investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te–ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level.

Inorganic nanocomposite films with polymer nanofillers made by the concurrent multi-beam multi-target pulsed laser deposition

Science.gov (United States)

Darwish, Abdalla M.; Sarkisov, Sergey S.; Mele, Paolo; Saini, Shrikant; Moore, Shaelynn; Bastian, Tyler; Dorlus, Wydglif; Zhang, Xiaodong; Koplitz, Brent

2017-08-01

We report on the new class of inorganic nanocomposite films with the inorganic phase hosting the polymer nanofillers made by the concurrent multi-beam multi-target pulsed laser deposition of the inorganic target material and matrix assisted pulsed laser evaporation of the polymer (MBMT-PLD/MAPLE). We used the exemplary nanocomposite thermoelectric films of aluminum-doped ZnO known as AZO with the nanofillers made of poly(methyl methacrylate) known as PMMA on various substrates such as SrTiO3, sapphire, fused silica, and polyimide. The AZO target was ablated with the second harmonic (532 nm) of the Nd:YAG Q-switched laser while PMMA was evaporated from its solution in chlorobenzene frozen in liquid nitrogen with the fundamental harmonic (1064 nm) of the same laser (50 Hz pulse repetition rate). The introduction of the polymer nanofillers increased the electrical conductivity of the nanocomposite films (possibly due to the carbonization of PMMA and the creation of additional channels of electric current) three times and reduced the thermal conductivity by 1.25 times as compared to the pure AZO films. Accordingly, the increase of the thermoelectric figure-of merit ZT would be 4 times. The best performance was observed for the sapphire substrates where the films were the most uniform. The results point to a huge potential of the optimization of a broad variety of optical, opto-electronic, and solar-power nanocomposite inorganic films by the controllable introduction of the polymer nanofillers using the MBMT-PLD/MAPLE method.

Stable iodide doping induced by photonic curing for carbon nanotube transparent conductive films

Science.gov (United States)

Wachi, Atsushi; Nishikawa, Hiroyuki; Zhou, Ying; Azumi, Reiko

2018-06-01

Doping has become crucial for achieving stable and high-performance conductive transparent carbon nanotube (CNT) films. In this study, we systematically investigate the doping effects of a few materials including alkali metal iodides, nonmetal iodide, and metals. We demonstrate that photonic curing can enhance the doping effects, and correspondingly improve the conductivity of CNT films, and that such iodides have better doping effects than metals. In particular, doping with a nonmetal compound (NH4I) shows the largest potential to improve the conductivity of CNT films. Typically, doping with metal iodides reduces the sheet resistance (R S) of CNT films with 70–80% optical transmittances at λ = 550 nm from 600–2400 to 250–440 Ω/square, whereas doping with NH4I reduces R S to 57 and 84 Ω/square at 74 and 84% optical transmittances, respectively. Interestingly, such a doped CNT film exhibits only a slight increase in sheet resistance under an extreme environment of high temperature (85 °C) and high relative humidity (85%) for 350 h. The results suggest that photonic-curing-induced iodide doping is a promising approach to producing high-performance conductive transparent CNT films.

Flux pinning in MOD YBCO films by chemical doping

International Nuclear Information System (INIS)

Zhou, Y X; Ghalsasi, S; Rusakova, I; Salama, K

2007-01-01

A novel nanomaterial synthesis technique has been developed to introduce 0D (particles), 1D (columnar defects) and 3D (domains) nanoscale pinning centres in MOD Y 1 Ba 2 Cu 3 O 7 (YBCO) coated conductors. We have succeeded in introducing nanoscale Y enriched particles, nanoscale 90 0 rotated Y 1/3 Sm 2/3 Ba 2 Cu 3 O 7 domains and nanoscale Zr enriched columnar defects into YBCO layers by different chemical doping. The pinning force density in Y 2 O 3 -doped YBCO film is found to be larger than that of pure YBCO film at all fields. Also it was found that YBCO films with Sm substituting for Y have yielded improved critical current density characteristics over a wide range of magnetic fields. Maximum pinning force densities exceeding 7 and 8 GN m -3 are obtained in 5% BZO-doped and Sm substituted YBCO films, respectively. Additionally, TEM studies revealed nanoscale Zr enriched columnar defects distributing in the matrix of the c-oriented YBCO film throughout the whole cross section. This indicates that chemical doping is a promising fabrication technique to create specific pinning landscapes in YBCO coated conductors

Synthesis and characterization of Fe doped cadmium selenide thin films by spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in [Thin Film Physics Laboratory, Department of Physics, Electronics and Photonics, Rajarshi Shahu Mahavidyalaya, Latur 413 512, Maharashtra (India)

2012-12-05

Highlights: Black-Right-Pointing-Pointer Simple and inexpensive method to dope trivalent Fe in CdSe thin films. Black-Right-Pointing-Pointer Fe doped CdSe thin films are highly photosensitive. Black-Right-Pointing-Pointer AFM analysis shows uniform deposition of film over the entire substrate surface. Black-Right-Pointing-Pointer The band gap energy decreases from 1.74 to 1.65 eV with Fe doping. Black-Right-Pointing-Pointer Film resistivity decreases to 6.76 Multiplication-Sign 10{sup 4} {Omega}-cm with Fe doping in CdSe thin films. - Abstract: Undoped and Fe doped CdSe thin films have been deposited onto the amorphous and fluorine doped tin oxide coated glass substrates by spray pyrolysis. The Fe doping concentration has been optimized by photoelectrochemical (PEC) characterization technique. The structural, surface morphological, compositional, optical and electrical properties of undoped and Fe doped CdSe thin films have been studied. X-ray diffraction study reveals that the as deposited CdSe films possess hexagonal crystal structure with preferential orientation along (1 0 0) plane. AFM analysis shows uniform deposition of the film over the entire substrate surface with minimum surface roughness of 7.90 nm. Direct allowed type of transition with band gap decreasing from 1.74 to 1.65 eV with Fe doping has been observed. The activation energy of the films has been found to be in the range of 0.14-0.19 eV at low temperature and 0.27-0.44 eV at high temperature. Semi-conducting behavior has been observed from resistivity measurements. The thermoelectric power measurements reveal that the films are of n type.

Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

International Nuclear Information System (INIS)

Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie; Gu, Changzhi

2014-01-01

B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3 K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63 nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity

Oxygen reduction activity of N-doped carbon-based films prepared by pulsed laser deposition

Science.gov (United States)

Hakoda, Teruyuki; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yamaki, Tetsuya; Kobayashi, Tomohiro; Yoshikawa, Masahito

2010-12-01

Carbon-based films with nitrogen species on their surface were prepared on a glassy carbon (GC) substrate for application as a non-platinum cathode catalyst for polymer electrolyte fuel cells. Cobalt and carbon were deposited in the presence of N 2 gas using a pulsed laser deposition method and then the metal Co was removed by HCl-washing treatment. Oxygen reduction reaction (ORR) activity was electrochemically determined using a rotating disk electrode system in which the film samples on the GC substrate were replaceable. The ORR activity increased with the temperature of the GC substrate during deposition. A carbon-based film prepared at 600 °C in the presence of N 2 at 66.7 Pa showed the highest ORR activity among the tested samples (0.66 V vs. NHE). This film was composed of amorphous carbons doped with pyridine type nitrogen atoms on its surface.

Methods for enhancing P-type doping in III-V semiconductor films

Science.gov (United States)

Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

2017-08-01

Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

μSR studies in an I2-doped phenylenediamine polymer

International Nuclear Information System (INIS)

Le, L.P.; Keren, A.; Luke, G.M.; Wu, W.D.; Uemura, Y.J.; Jenks, W.S.; Graff, A.; Breslow, R.; Dosanjh, P.

1994-01-01

We report μSR studies of the recently synthesized I 2 -doped phenylenediamine polymer. Longitudinal-field spectra exhibit typical behavior of a spin-glass with a freezing temperature T g ∼ 100 K and a spontaneous static local field ∼ 500 G at low temperatures. Preliminary magnetization measurements hint of antiferromagnetic spin coupling and hysteretic behavior around T g . These features suggest possible spin-glass and/or antiferromagnetic spin freezing with a high transition temperature due to the doped radical spins in this organic polymer. (orig.)

Nanoimprinted polymer photonic crystal dye lasers

DEFF Research Database (Denmark)

Christiansen, Mads Brøkner; Smith, Cameron; Buss, Thomas

2010-01-01

Optically pumped polymer photonic crystal band-edge dye lasers are presented. The photonic crystal is a rectangular lattice providing laser feedback as well as an optical resonance for the pump light. The lasers are defined in a thin film of photodefinable Ormocore hybrid polymer, doped...

Microwave plasma-assisted photoluminescence enhancement in nitrogen-doped ultrananocrystalline diamond film

Directory of Open Access Journals (Sweden)

Yu Lin Liu

2012-06-01

Full Text Available Optical properties and conductivity of nitrogen-doped ultrananocrystal diamond (UNCD films were investigated following treatment with low energy microwave plasma at room temperature. The plasma also generated vacancies in UNCD films and provided heat for mobilizing the vacancies to combine with the impurities, which formed the nitrogen-vacancy defect centers. The generated color centers were distributed uniformly in the samples. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. The photoluminescence emitted by the plasma treated nitrogen-doped UNCD films was enhanced significantly compared to the untreated films.

Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

2012-10-01

Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

Synthesis, characterization and electrochemical behavior of Sb-doped ZnO microsphere film

Energy Technology Data Exchange (ETDEWEB)

Li, Qian [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Cheng, Kui, E-mail: chengkui@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); Weng, Wenjian, E-mail: wengwj@zju.edu.cn [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China); The Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050 (China); Du, Piyi; Han, Gaorong [Department of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027 (China)

2013-10-01

Sb-doped ZnO microsphere film was fabricated by a carboxylate ion assisted hydrothermal route coupled with a post-calcination process. The structure, chemical composition and optical band gap of the Sb-doped ZnO microsphere film were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, inductively couple plasma optical emission spectroscopy and UV–visible spectrophotometry, and compared with the un-doped ZnO microsphere film. The results suggest that the formation of zinc–antimony tartrate complex species during hydrothermal growth is the key to realize Sb-doped ZnO microstructures, and the present hydrothermal method with post-calcination is an effective way to dope Sb into ZnO. Furthermore, the Sb-doped ZnO microsphere film based electrochemical biosensor exhibits a good sensing performance for the detection of hydrogen peroxide, with a sensitivity of 271 μA mM{sup −1} cm{sup −2} which is more than three times higher than that of the un-doped ZnO biosensor. - Highlights: • Sb-doped ZnO microsphere (SZM) films were grown by hydrothermal deposition. • Carboxylate ions were used to form complex during hydrothermal growth. • The formation of Zn–Sb tartrate complex is the key to realize SZM. • The biosensors based on SZM film are feasible and sensitive to detect H{sub 2}O{sub 2}. • The Sb doping could improve the electrochemical property of ZnO.

Magnetic and electromagnetic properties of Pr doped strontium ferrite/polyaniline composite film

Energy Technology Data Exchange (ETDEWEB)

Huang, Ying; Li, Yuqing; Wang, Yan, E-mail: wangyan287580632@126.com

2014-11-15

This paper reported three acid (including hydrochloric acid HCl, p-toluenesulfonic acid PTS and D-camphor-10-acid CSA) doped SrPr{sub 0.2}Fe{sub 11.8}O{sub 19}/PANI composite film and the HCl–PANI film prepared by a sol–gel method and in-situ oxidative polymerization. The characteristics of the film phase structure, surface morphology, conductivity and magnetic and electromagnetic properties were studied by using XRD, XPS, FESEM, four-probe tester, VSM and Vector Network Analyzer. The resistivity of organic acid doped composite films is higher than that of the HCl doped one. The saturation and remanent magnetization of PTS and HCl doped composite films are greater than the CSA-doped one; however, the coercivity of the three acid doped composite films is basically 5546 Oe. The saturation magnetization, remanent magnetization and coercivity of SrPr{sub 0.2}Fe{sub 11.8}O{sub 19} film are greater than those of the SrPr{sub 0.2}Fe{sub 11.8}O{sub 19}–PANI composite film. In the frequency range of 8–12 GHz, the dielectric loss of HCl–PANI film is the maximum, and the dielectric loss of SrPr{sub 0.2}Fe{sub 11.8}O{sub 19} film is the minimum; the magnetic loss of the four films is in descending order as SrPr{sub 0.2}Fe{sub 11.8}O{sub 19} film, PrSrM/(HCl–PANI) composite film, PrSrM/(CSA–PANI) and HCl–PANI film. - Highlights: • Synthesizing three acid doped SrPr{sub 0.2}Fe{sub 11.8}O{sub 19}/PANI composite films. • By sol–gel method and in-situ oxidative polymerization. • With excellent magnetic and electromagnetic properties. • The particular coating structure of PANI and Sr-ferrite. • Great interest for magnetic material and microwave absorbers.

Effect of hydrogen doping on the properties of Al and F co-doped ZnO films for thin film silicon solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Yang, Tung-Hsin

2016-04-30

Aluminum and fluorine co-doped zinc oxide (AFZO) thin films were prepared in Ar + H{sub 2} atmospheres by rf magnetron sputtering at room temperature. The structural, electrical, and optical properties of the prepared films were investigated using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, X-ray photoelectron spectroscopy, and ultraviolet–visible spectrometry, and their dependence on deposition atmosphere (i.e. H{sub 2} / (H{sub 2} + Ar) ratio) was studied. The resulting films showed a (0 0 2) diffraction peak, indicating a typical wurtzite structure, and the optimal film crystallinity was obtained with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%. The electrical resistivity of AFZO films decreased to 9.16 × 10{sup −4} Ω-cm, which was lower than ZnO:Al and ZnO:F films due to double doping effect of Al and F. The resistivity further decreased to below 5 × 10{sup −4} Ω-cm for the AFZO film with the H{sub 2} / (H{sub 2} + Ar) ratio of 3%–5%. All the films regardless of hydrogen content displayed high transmittances (> 92%) in the visible wavelength range. Applying the developed AFZO films as front transparent electrodes, amorphous Si thin film solar cells were fabricated and the open-circuit voltage, fill factor, and efficiency of the cell with the hydrogenated AFZO film were improved in contrast to those without the hydrogenated film. - Highlights: • H{sub 2} doping improves optoelectronic properties of Al, F co-doped ZnO (AFZO) films. • Resistivity of AFZO films decreases to 4.4 × 10{sup −4} Ω-cm with the 3% H{sub 2}/(Ar + H{sub 2}) ratio. • AFZO films show high average visible transmittances of above 92%. • Efficiency of a-Si thin film solar cells is improved by AFZO:H as front electrode.

Plasma-polymerized SiOx deposition on polymer film surfaces for preparation of oxygen gas barrier polymeric films

International Nuclear Information System (INIS)

Inagaki, N.

2003-01-01

SiOx films were deposited on surfaces of three polymeric films, PET, PP, and Nylon; and their oxygen gas barrier properties were evaluated. To mitigate discrepancies between the deposited SiOx and polymer film, surface modification of polymer films was done, and how the surface modification could contribute to was discussed from the viewpoint of apparent activation energy for the permeation process. The SiOx deposition on the polymer film surfaces led to a large decrease in the oxygen permeation rate. Modification of polymer film surfaces by mans of the TMOS or Si-COOH coupling treatment in prior to the SiOx deposition was effective in decreasing the oxygen permeation rate. The cavity model is proposed as an oxygen permeation process through the SiOx-deposited Nylon film. From the proposed model, controlling the interface between the deposited SiOx film and the polymer film is emphasized to be a key factor to prepare SiOx-deposited polymer films with good oxygen gas barrier properties. (author)

Study of amorphous semiconductors doped with rare earths (Gd and Er) and conducting polymers by EPR techniques and magnetic susceptibility

International Nuclear Information System (INIS)

Sercheli, Mauricio da Silva

1999-01-01

This thesis involves the study of amorphous semiconductors and conducting polymers, which have been characterized by EPR and magnetic susceptibility measurements, and to a lesser extent by Raman spectroscopy and RBS. The semiconductors were studied using thin films of silicon doped with rare earth metals, e.g. erbium and gadolinium, which had their magnetic properties studied. Using these studies we could determine the state of valence of the rare earths as well as their concentrations in the silicon matrix. According to our results, the valence of the rare earth metal ions is 3+, and we were able to conclude that 4f electronic shells could not be used for the calculation of the conducting band in this system. Furthermore, the analysis of the data on the magnetic susceptibility of the Er 3+ ion with cubic crystalline acting field, gave us the opportunity to estimate the overall splitting of their electronic states for the first time. The conducting polymers were studied using samples of poly(3-methylthiophene) doped with ClO 4 - , which show a phase transition in the range of 230 K to 130 K. The electron paramagnetic resonance also gives important information on the crystallization, doping level and the presence of polarons or bipolarons in conducting polymers. (author)

Electrical characterization of proton conducting polymer electrolyte based on bio polymer with acid dopant

Energy Technology Data Exchange (ETDEWEB)

Kalaiselvimary, J.; Pradeepa, P.; Sowmya, G.; Edwinraj, S.; Prabhu, M. Ramesh, E-mail: email-mkram83@gmail.com [Department of Physics, Alagappa University, Karaikudi – 630 004, India. (India)

2016-05-06

This study describes the biodegradable acid doped films composed of chitosan and Perchloric acid with different ratios (2.5 wt %, 5 wt %, 7.5 wt %, 10 wt %) was prepared by the solution casting technique. The temperature dependence of the proton conductivity of complex electrolytes obeys the Arrhenius relationship. Proton conductivity of the prepared polymer electrolyte of the bio polymer with acid doped was measured to be approximately 5.90 × 10{sup −4} Scm{sup −1}. The dielectric data were analyzed using Complex impedance Z*, Dielectric loss ε’, Tangent loss for prepared polymer electrolyte membrane with the highest conductivity samples at various temperature.

Effect of Secondary Doping Using Sorbitol on Structure and Transport Properties of PEDOT-PSS Thin Films

Science.gov (United States)

Khasim, Syed; Pasha, Apsar; Roy, Aashish S.; Parveen, Ameena; Badi, Nacer

2017-07-01

Poly(3,4-ethylene dioxythiophene):poly(styrenesulphonate) (PEDOT-PSS) in the recent past has emerged as one of the most fascinating conducting polymers for many device applications. The unique feature of PEDOT-PSS is its transparency in the entire visible spectrum with excellent thermal stability. The PEDOT-PSS as prepared as an aqueous dispersion has very low conductivity, and it hinders the performance of a device. In this work we report the conductivity enhancement of PEDOT-PSS thin films through secondary doping using a polar organic solvent such as sorbitol. The mechanism of conductivity enhancement was studied through various physical and chemical characterizations. The effect of sorbitol concentration on structure and transport properties of PEDOT-PSS thin films was investigated in detail. The structural and morphological modifications in PEDOT-PSS due to the addition of sorbitol was studied through Fourier transform spectroscopy, Ultra Violet-visible spectroscopy, theromogravimetric analysis, scanning electron microscopy and atomic force microscopy. The interactions resulting from conformational changes of PEDOT chains that changes from coiled to linear structure due to the sorbitol treatment significantly improves the conductivity of PEDOT-PSS films. The secondary doping of sorbitol reduces the energy barrier that facilitates the charge carrier hopping leading to enhanced conductivity. We have observed that the conductivity of PEDOT-PSS thin films was increased by two fold due to sorbitol treatment when compared to conductivity of pure PEDOT-PSS. We have carried out detailed analysis of dielectric parameters of sorbitol-treated PEDOT-PSS films and found that sorbitol treatment has a significant effect on various dielectric attributes of PEDOT-PSS films. Hence, secondary doping using sorbitol could be a useful way to effectively tailor the conductivity and dielectric properties of PEDOT-PSS thin films that can be used as flexible electrodes in

Enhanced ultraviolet photo-response in Dy doped ZnO thin film

Science.gov (United States)

Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

2018-02-01

In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

Controlled release of tocopherols from polymer blend films

Science.gov (United States)

Obinata, Noe

Controlled release packaging has great potential to increase storage stability of foods by releasing active compounds into foods continuously over time. However, a major limitation in development of this technology is the inability to control the release and provide rates useful for long term storage of foods. Better understanding of the factors affecting active compound release is needed to overcome this limitation. The objective of this research was to investigate the relationship between polymer composition, polymer processing method, polymer morphology, and release properties of active compounds, and to provide proof of principle that compound release is controlled by film morphology. A natural antioxidant, tocopherol was used as a model active compound because it is natural, effective, heat stable, and soluble in most packaging polymers. Polymer blend films were produced from combination of linear low density polyethylene (LLDPE) and high density polyethylene (HDPE), polypropylene (PP), or polystyrene (PS) with 3000 ppm mixed tocopherols using conventional blending method and innovative blending method, smart blending with a novel mixer using chaotic advection. Film morphologies were visualized with scanning electron microscopy (SEM). Release of tocopherols into 95% ethanol as a food simulant was measured by UV/Visible spectrophotometry or HPLC, and diffusivity of tocopherols in the polymers was estimated from this data. Polymer composition (blend proportions) and processing methods have major effects on film morphology. Four different types of morphologies, dispersed, co-continuous, fiber, and multilayer structures were developed by either conventional extrusion or smart blending. With smart blending of fixed polymer compositions, different morphologies were progressively developed with fixed polymer composition as the number of rod rotations increased, providing a way to separate effects of polymer composition and morphology. The different morphologies

Corrosion Protection of Steels by Conducting Polymer Coating

Directory of Open Access Journals (Sweden)

Toshiaki Ohtsuka

2012-01-01

Full Text Available The corrosion protection of steels by conducting polymer coating is reviewed. The conducting polymer such as polyaniline, polypyrrole, and polythiophen works as a strong oxidant to the steel, inducing the potential shift to the noble direction. The strongly oxidative conducting polymer facilitates the steel to be passivated. A bilayered PPy film was designed for the effective corrosion protection. It consisted of the inner layer in which phosphomolybdate ion, PMo12O3−40 (PMo, was doped and the outer layer in which dodecylsulfate ion (DoS was doped. The inner layer stabilized the passive oxide and the outer possessed anionic perm-selectivity to inhibit the aggressive anions such as chloride from penetrating through the PPy film to the substrate steel. By the bilayered PPy film, the steel was kept passive for about 200 h in 3.5% sodium chloride solution without formation of corrosion products.

Dynamic studies of nano-confined polymer thin films

Science.gov (United States)

Geng, Kun

Polymer thin films with the film thickness (h0 ) below 100 nm often exhibit physical properties different from the bulk counterparts. In order to make the best use of polymer thin films in applications, it is important to understand the physical origins of these deviations. In this dissertation, I will investigate how different factors influence dynamic properties of polymer thin films upon nano-confinement, including glass transition temperature (Tg), effective viscosity (etaeff) and self-diffusion coefficient (D ). The first part of this dissertation concerns the impacts of the molecular weight (MW) and tacticity on the Tg's of nano-confined polymer films. Previous experiments showed that the Tg of polymer films could be depressed or increased as h0 decreases. While these observations are usually attributed to the effects of the interfaces, some experiments suggested that MW's and tacticities might also play a role. To understand the effects of these factors, the Tg's of silica-based poly(alpha-methyl styrene) (PalphaMS/SiOx) and poly(methyl methacrylate) (PMMA/SiOx) thin films were studied, and the results suggested that MW's and tacticities influence Tg in nontrivial ways. The second part concerns an effort to resolve the long-standing controversy about the correlation between different dynamics of polymer thin films upon nano-confinement. Firstly, I discuss the experimental results of Tg, D and etaeff of poly(isobutyl methacrylate) films supported by silica (PiBMA/SiOx). Both T g and D were found to be independent of h 0, but etaeff decreased with decreasing h 0. Since both D and etaeff describe transport phenomena known to depend on the local friction coefficient or equivalently the local viscosity, it is questionable why D and etaeff displayed seemingly inconsistent h 0 dependencies. We envisage the different h0 dependencies to be caused by Tg, D and etaeff being different functions of the local T g's (Tg,i) or viscosities (eta i). By assuming a three

Enhanced field emission from Si doped nanocrystalline AlN thin films

International Nuclear Information System (INIS)

Thapa, R.; Saha, B.; Chattopadhyay, K.K.

2009-01-01

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

Optical and electrochromic properties of sol-gel deposited Ti- doped vanadium oxide films

International Nuclear Information System (INIS)

Oezer, N.; Sabuncu, S.

1997-01-01

Because of the yellowish color, vanadium oxide films in the as deposited state is not as favorable as transparent coatings for most elector chromic devices. an interesting possibility to alter the yellowish colours is the doping with other non-absorbing metal oxides. Ti doped vanadium oxide films with various amounts of titanium were synthesized and investigated as transparent counter electrodes for electrochromic transmissive device application. Electrochromic titanium doped vanadium pentoxide (V sub 2 O 5) coatings were prepared by the sol-gel dip coating technique. The coating solutions were synthesized from vanadium tri(isopropoxide) precursors. X-ray diffraction (XRD) studies showed that the sol-gel deposited doped films heat treated at temperatures below 350 degree centigrade, were amorphous, whereas hose heat treated at higher temperatures were slight y crystalline. The optical and electrochemical properties of the Ti doped vanadium oxide films has been investigated in 0.1 m LiClO sub 4 propylene carbonate solution color changes by dropping were noted for all investigated films exhibits good electrochemical cycling (CV) measurements also showed that Ti doped V sub 2 O sub 5 films exhibits good electrochemical cycling reversibility, 'in situ' optical measurement revealed that those films exhibits good electrochemical cycling the spectra range 300 < lambda < 800 nm and change color between yellow and light green. The change in visible transmittance was 25 % for 5% Ti doped film. (author)

Quantum dot doped solid polymer electrolyte for device application

Energy Technology Data Exchange (ETDEWEB)

Singh, Pramod K.; Kim, Kang Wook; Rhee, Hee-Woo [Department of Chemical and Biomolecular Engineering, Sogang University, Mapo-Gu, Seoul 121-742 (Korea)

2009-06-15

ZnS capped CdSe quantum dots embedded in PEO:KI:I{sub 2} polymer electrolyte matrix have been synthesized and characterized for dye sensitized solar cell (DSSC) application. The complex impedance spectroscopy shows enhance in ionic conductivity ({sigma}) due to charges provide by quantum dots (QD) while AFM affirm the uniform distribution of QD into polymer electrolyte matrix. Cyclic voltammetry revealed the possible interaction between polymer electrolyte, QD and iodide/iodine. The photovoltaic performances of the DSSC containing quantum dots doped polymer electrolyte was also found to improve. (author)

Tantalum-doped hydroxyapatite thin films: Synthesis and characterization

International Nuclear Information System (INIS)

Ligot, S.; Godfroid, T.; Music, D.; Bousser, E.; Schneider, J.M.; Snyders, R.

2012-01-01

To achieve a good bioactivity, magnetron-sputtered (MS) hydroxyapatite (HA) coatings have to be stoichiometric and crystalline. It has also been suggested that doping HA with metallic elements improves its bioactivity but frequently reduces its Young’s modulus. Therefore, efforts are still necessary to identify adequate growth conditions, good doping elements and finally to grow doped HA films. In a first attempt, HA films have been synthesized by MS. Our conditions enabled us to grow at ∼10 nm min −1 stoichiometric and crystallized HA coatings that presented a strong texture. The latter is discussed in view of the competitive growth of the material under the strong electron and ion bombardments used here. Based on ab initio calculations identifying Ta as a promising doping element, we then investigated the growth of Ta-doped hydroxyapatite (HA:Ta) by magnetron co-sputtering. The HA:Ta films were in situ crystallized. Our data reveals that for Ta contents <4.5 at.%, Ta could substitute Ca in the HA cell. For higher doping contents, a deviation from the stoichiometric compound is observed and CaO appears. By nanoindentation, we have measured an elastic modulus of 120 ± 9 GPa for a Ta content of 3 at.%. This value is very close to the value of 110 GPa calculated by ab initio calculations, supporting the substitution scenario. The elasticity drop may be understood by screening of the ionic interaction between constituents in HA upon Ta incorporation.

Structural, morphological and optical properties of spray deposited Mn-doped CeO2 thin films

International Nuclear Information System (INIS)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G.

2014-01-01

Highlights: • Spray deposited undoped and Mn-doped CeO 2 thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO 2 thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO 2 films were studied. It was found that both the undoped and doped CeO 2 films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO 2 film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported

A short literature survey on iron and cobalt ion doped TiO2 thin films and photocatalytic activity of these films against fungi

International Nuclear Information System (INIS)

Tatlıdil, İlknur; Bacaksız, Emin; Buruk, Celal Kurtuluş; Breen, Chris; Sökmen, Münevver

2012-01-01

Highlights: ► Co or Fe doped TiO 2 thin films were prepared by sol–gel method. ► We obtained lower E g values for Fe-doped and Co-TiO 2 thin films. ► Doping greatly affected the size and shape of the TiO 2 nanoparticles. ► Photocatalytic killing effect of the doped TiO 2 thin films on C. albicans and A. niger was significantly higher than undoped TiO 2 thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe 3+ or Co 2+ ion doped TiO 2 thin films and suspensions were summarized. Additionally, a sol–gel method was used for preparation of the 2% Co or Fe doped TiO 2 thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E g value was 3.40 eV for the pure TiO 2 , 3.00 eV for the Fe-doped TiO 2 film and 3.25 eV for Co-TiO 2 thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO 2 nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO 2 thin film on Candida albicans was significantly higher than Fe doped TiO 2 thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

Directory of Open Access Journals (Sweden)

Busi Rambabu

2014-01-01

Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

Facile synthesis of antimony-doped tin oxide nanoparticles by a polymer-pyrolysis method

International Nuclear Information System (INIS)

Li, Yuan-Qing; Wang, Jian-Lei; Fu, Shao-Yun; Mei, Shi-Gang; Zhang, Jian-Min; Yong, Kang

2010-01-01

In this article, antimony-doped tin oxide (ATO) nanoparticles was synthesized by a facile polymer-pyrolysis method. The pyrolysis behaviors of the polymer precursors prepared via in situ polymerization of metal salts and acrylic acid were analyzed by simultaneous thermogravimetric and differential scanning calorimetry (TG-DSC). The structural and morphological characteristics of the products were studied by powder X-ray diffraction (XRD) and transmission electron microscope (TEM). The results reveal that the ATO nanoparticles calcined at 600 o C show good crystallinity with the cassiterite structure and cubic-spherical like morphology. The average particle size of ATO decreases from 200 to 15 nm as the Sb doping content increases from 5 mol% to 15 mol%. Electrical resistivity measurement shows that the resistivity for the 10-13 mol% Sb-doped SnO 2 nanoparticles is reduced by more than three orders compared with the pure SnO 2 nanoparticles. In addition, due to its versatility this polymer-pyrolysis method can be extended to facile synthesis of other doped n-type semiconductor, such as In, Ga, Al doped ZnO, Sn doped In 2 O 3 .

Nitrogen-doped graphene films from simple photochemical doping for n-type field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Li, Xinyu [College of Science, Guilin University of Technology, Guilin 541004 (China); Department of Physics and Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China); Tang, Tao; Li, Ming, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [College of Science, Guilin University of Technology, Guilin 541004 (China); He, Xiancong, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167 (China)

2015-01-05

Highly nitrogen-doped GO (NGO) and n-type graphene field effect transistor (FET) have been achieved by simple irradiation of graphene oxide (GO) thin films in NH{sub 3} atmosphere. The electrical properties of the NGO film were performed on electric field effect measurements, and it displays an n-type FET behavior with a charge neutral point (Dirac point) located at around −8 V. It is suggested that the amino-like nitrogen (N-A) mainly contributes to the n-type behavior. Furthermore, compared to the GO film irradiated in Ar atmosphere, the NGO film is much more capable to improve the electrical conductivity. It may attribute to nitrogen doping and oxygen reduction, both of which can effectively enhance the electrical conductivity.

Rapid synthesis of flexible conductive polymer nanocomposite films

International Nuclear Information System (INIS)

Blattmann, C O; Sotiriou, G A; Pratsinis, S E

2015-01-01

Polymer nanocomposite films with nanoparticle-specific properties are sought out in novel functional materials and miniaturized devices for electronic and biomedical applications. Sensors, capacitors, actuators, displays, circuit boards, solar cells, electromagnetic shields and medical electrodes rely on flexible, electrically conductive layers or films. Scalable synthesis of such nanocomposite films, however, remains a challenge. Here, flame aerosol deposition of metallic nanosliver onto bare or polymer-coated glass substrates followed by polymer spin-coating on them leads to rapid synthesis of flexible, free-standing, electrically conductive nanocomposite films. Their electrical conductivity is determined during their preparation and depends on substrate composition and nanosilver deposition duration. Accordingly, thin (<500 nm) and flexible nanocomposite films are made having conductivity equivalent to metals (e.g. 5  × 10 4 S cm −1 ), even during repetitive bending. (paper)

The Impact of Molecular p-Doping on Charge Transport in High-Mobility Small-Molecule/Polymer Blend Organic Transistors

KAUST Repository

Paterson, Alexandra F.

2017-12-27

Molecular doping is a powerful tool with the potential to resolve many of the issues currently preventing organic thin-film transistor (OTFT) commercialization. However, the addition of dopant molecules into organic semiconductors often disrupts the host lattice, introducing defects and harming electrical transport. New dopant-based systems that overcome practical utilization issues, while still reaping the electrical performance benefits, would therefore be extremely valuable. Here, the impact of p-doping on the charge transport in blends consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT), and the molecular dopant C60F48 is investigated. Electrical field-effect measurements indicate that p-doping not only enhances the average saturation mobility from 1.4 to 7.8 cm2 V−1 s−1 over 50 devices (maximum values from around 4 to 13 cm2 V−1 s−1), but also improves bias–stress stability, contact resistance, threshold voltage, and the overall device-to-device performance variation. Importantly, materials characterization using X-ray diffraction, X-ray photoemission spectroscopy, and ultraviolet photoemission spectroscopy, combined with charge transport modeling, reveal that effective doping is achieved without perturbing the microstructure of the polycrystalline semiconductor film. This work highlights the remarkable potential of ternary organic blends as a simple platform for OTFTs to achieve all the benefits of doping, with none of the drawbacks.

The Impact of Molecular p-Doping on Charge Transport in High-Mobility Small-Molecule/Polymer Blend Organic Transistors

KAUST Repository

Paterson, Alexandra F.; Lin, Yen-Hung; Mottram, Alexander D.; Fei, Zhuping; Niazi, Muhammad Rizwan; Kirmani, Ahmad R.; Amassian, Aram; Solomeshch, Olga; Tessler, Nir; Heeney, Martin; Anthopoulos, Thomas D.

2017-01-01

Molecular doping is a powerful tool with the potential to resolve many of the issues currently preventing organic thin-film transistor (OTFT) commercialization. However, the addition of dopant molecules into organic semiconductors often disrupts the host lattice, introducing defects and harming electrical transport. New dopant-based systems that overcome practical utilization issues, while still reaping the electrical performance benefits, would therefore be extremely valuable. Here, the impact of p-doping on the charge transport in blends consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT), the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT), and the molecular dopant C60F48 is investigated. Electrical field-effect measurements indicate that p-doping not only enhances the average saturation mobility from 1.4 to 7.8 cm2 V−1 s−1 over 50 devices (maximum values from around 4 to 13 cm2 V−1 s−1), but also improves bias–stress stability, contact resistance, threshold voltage, and the overall device-to-device performance variation. Importantly, materials characterization using X-ray diffraction, X-ray photoemission spectroscopy, and ultraviolet photoemission spectroscopy, combined with charge transport modeling, reveal that effective doping is achieved without perturbing the microstructure of the polycrystalline semiconductor film. This work highlights the remarkable potential of ternary organic blends as a simple platform for OTFTs to achieve all the benefits of doping, with none of the drawbacks.

Investigation of corrosion behavior of nitrogen doped and platinum/ruthenium doped diamond-like carbon thin films in Hank's solution

International Nuclear Information System (INIS)

Khun, N.W.; Liu, E.

2011-01-01

Undoped (DLC), nitrogen-doped (N-DLC) and platinum/ruthenium doped diamond-like carbon (PtRu-DLC) thin films were deposited on p-Si (100) substrates using a DC magnetron sputtering deposition system. The chemical composition, bonding structure, surface morphology and adhesion strength of the films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch test, respectively. The corrosion behavior of the films in a Hank's solution was investigated using potentiodynamic polarization test. The corrosion results revealed that the PtRu-DLC film had the highest corrosion potential among the films used in this study. Highlights: → DLC thin films were deposited on Si substrates via dc magnetron sputtering. → Some DLC films were doped with N and/or Pt/Ru. → The film corrosion behavior was studied in a Hank solution with polarization test. → The PtRu-DLC film showed the highest corrosion potential among the films studied.

Pure antimony film as saturable absorber for Q-switched erbium-doped fiber laser

Science.gov (United States)

Rahman, M. F. A.; Zhalilah, M. Z.; Latiff, A. A.; Rosol, A. H. A.; Lokman, M. Q.; Bushroa, A. R.; Dimyati, K.; Harun, S. W.

2018-04-01

This paper reports on the use of Antimony (Sb) polymer film to generate stable Q-switching pulses in Erbium-doped fiber laser (EDFL) cavity. The SA is fabricated by coating a thin layer of Sb on a polyvinyl alcohol (PVA) film through physical vapour deposition (PVD) process. A 1 × 1 mm area of the film SA is cut and integrated into between two fiber ferrules inside the laser cavity for intra-cavity loss modulation. Self-starting and stable Q-switched pulses are obtained within a pump power range from 60 to 142 mW. Within this range, the repetition rate increases from 70.82 to 98.04 kHz, while pulse width decreases from 7.42 to 5.36 μs. The fundamental frequency signal-to-noise ratio of the pulse signal is 74 dB, which indicates the excellent stability of the pulses. The maximum output power and pulse energy are 8.45 mW and 86.19 nJ, respectively. Our demonstration shows that Sb film SA capable of generating stable pulses train operating at 1.55-micron region.

Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

Energy Technology Data Exchange (ETDEWEB)

Sadananda Kumar, N., E-mail: sadanthara@gmail.com; Bangera, Kasturi V.; Shivakumar, G. K. [National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)

2015-07-15

Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

Multimode laser emission from dye-doped hollow polymer optical fibre

Indian Academy of Sciences (India)

2014-02-09

Feb 9, 2014 ... Dye-doped polymer optical fibre preforms were fabricated by the controlled polymeriza- tion of Rh B-doped methyl methacrylate (MMA). Hole in the preform can be achieved by placing a teflon rod on the centre of the glass tube during the polymerization. Final fibre structure with required diameter was ...

Origin of electrophosphorescence from a doped polymer light emitting diode

International Nuclear Information System (INIS)

Lane, P. A.; Palilis, L. C.; O'Brien, D. F.; Giebeler, C.; Cadby, A. J.; Lidzey, D. G.; Campbell, A. J.; Blau, W.; Bradley, D. D. C.

2001-01-01

The origin of electrophosphorescence from a doped polymer light emitting diode (LED) has been investigated. A luminescent polymer host, poly(9,9-dioctylfluorene) (PFO), was doped with a red phosphorescent dye, 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (PtOEP). The maximum external quantum efficiency of 3.5% was obtained at a concentration of 4% PtOEP by weight. Energy transfer mechanisms between PFO and PtOEP were studied by absorption, photoluminescence, and photoinduced absorption spectroscopy. Even though electroluminescence spectra were dominated by PtOEP at a concentration of only 0.2 wt% PtOEP, Forster transfer of singlet excitons was weak and there was no evidence for Dexter transfer of triplet excitons. We conclude that the dominant emission mechanism in doped LED's is charge trapping followed by recombination on PtOEP molecules

Study of memory effects in polymer dispersed liquid crystal films

International Nuclear Information System (INIS)

Han, Jinwoo

2006-01-01

In this work, we have studied the memory effects in polymer dispersed liquid crystal films. We found that optical responses, such as the memory effects, of the films depended strongly on the morphology. For example, memory effects were observed for films with polymer ball morphologies; however, only weak hysteresis effects were observed for films with droplet morphologies. In particular, a stronger memory effect was observed for films with more complicated polymer ball structures. Coincidentally, T TE , the temperature at which the memory state is thermally erased, was generally higher for the films exhibiting a stronger memory effect. In addition, studies of the temporal evolution of the films show that the memory effects become stronger after films have been kept on the shelf for a period of time. This change is likely to be associated with a modification of surface anchoring properties at the LC-polymer interface.

Dielectric breakdown in silica-amorphous polymer nanocomposite films: the role of the polymer matrix.

Science.gov (United States)

Grabowski, Christopher A; Fillery, Scott P; Westing, Nicholas M; Chi, Changzai; Meth, Jeffrey S; Durstock, Michael F; Vaia, Richard A

2013-06-26

The ultimate energy storage performance of an electrostatic capacitor is determined by the dielectric characteristics of the material separating its conductive electrodes. Polymers are commonly employed due to their processability and high breakdown strength; however, demands for higher energy storage have encouraged investigations of ceramic-polymer composites. Maintaining dielectric strength, and thus minimizing flaw size and heterogeneities, has focused development toward nanocomposite (NC) films; but results lack consistency, potentially due to variations in polymer purity, nanoparticle surface treatments, nanoparticle size, and film morphology. To experimentally establish the dominant factors in broad structure-performance relationships, we compare the dielectric properties for four high-purity amorphous polymer films (polymethyl methacrylate, polystyrene, polyimide, and poly-4-vinylpyridine) incorporating uniformly dispersed silica colloids (up to 45% v/v). Factors known to contribute to premature breakdown-field exclusion and agglomeration-have been mitigated in this experiment to focus on what impact the polymer and polymer-nanoparticle interactions have on breakdown. Our findings indicate that adding colloidal silica to higher breakdown strength amorphous polymers (polymethyl methacrylate and polyimide) causes a reduction in dielectric strength as compared to the neat polymer. Alternatively, low breakdown strength amorphous polymers (poly-4-vinylpyridine and especially polystyrene) with comparable silica dispersion show similar or even improved breakdown strength for 7.5-15% v/v silica. At ∼15% v/v or greater silica content, all the polymer NC films exhibit breakdown at similar electric fields, implying that at these loadings failure becomes independent of polymer matrix and is dominated by silica.

Free volume modifications in chalcone chromophore doped PMMA films by electron irradiation: Positron annihilation study

Science.gov (United States)

Ismayil; Ravindrachary, V.; Praveena, S. D.; Mahesha, M. G.

2018-03-01

The free volume related fluorescence behaviour in electron beam irradiated chalcone chromophore doped Poly(methyl methacrylate) (PMMA) composite films have been studied using FTIR, UV-Visible, XRD and Positron Annihilation techniques. From the FTIR spectral study it is found that the formation of polarons and bipolaron takes place due to cross linking as well as chain scission processes at lower and higher doses respectively. It reveals that the formation of various polaronic defect levels upon irradiation is responsible for the creation of three optical energy band gaps within the polymer films as obtained from UV-Visible spectra. The crosslinking process at lower doses increases the distance between the pendant groups to reduce the interchain distance and chain scission process at higher doses decreases interchain separation to enhance the number of polarons in the polymer composites as suggested by XRD studies. The fluorescence studies show the enhancement of fluorescence emission at lower doses and reduction at higher doses under electron irradiation. The positron annihilation study suggests that the low radiation doses induce crosslinking which affect the free volume properties and in turn hinders the chalcone molecular rotation within the polymer composite. At higher doses chain scission process support polymer matrix relaxation and facilitates non-radiative transition of the chromophore upon excitation. This study shows that fluorescence enhancement and mobility of chromophore within the polymer matrix is directly related to the free volume around it.

Effect of La doping on crystalline orientation, microstructure and dielectric properties of PZT thin films

Energy Technology Data Exchange (ETDEWEB)

Xu, Wencai; Li, Qi; Wang, Xing [Dalian Univ. of Technology, Dalian (China). School of Mechanical Engineering; Yin, Zhifu [Jilin Univ., Changchun (China). Faculty of the School of Mechanical Science and Engineering; Zou, Helin [Dalian Univ. of Technology, Dalian (China). Key Lab. for Micro/Nano Systems and Technology

2017-11-01

Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.

Functionalized polymer film surfaces via surface-initiated atom transfer radical polymerization

International Nuclear Information System (INIS)

Hu, Y.; Li, J.S.; Yang, W.T.; Xu, F.J.

2013-01-01

The ability to manipulate and control the surface properties of polymer films, without altering the substrate properties, is crucial to their wide-spread applications. In this work, a simple one-step method for the direct immobilization of benzyl chloride groups (as the effective atom transfer radical polymerization (ATRP) initiators) on the polymer films was developed via benzophenone-induced coupling of 4-vinylbenzyl chloride (VBC). Polyethylene (PE) and nylon films were selected as examples of polymer films to illustrate the functionalization of film surfaces via surface-initiated ATRP. Functional polymer brushes of (2-dimethylamino)ethyl methacrylate, sodium 4-styrenesulfonate, 2-hydroxyethyl methacrylate and glycidyl methacrylate, as well as their block copolymer brushes, have been prepared via surface-initiated ATRP from the VBC-coupled PE or nylon film surfaces. With the development of a simple approach to the covalent immobilization of ATRP initiators on polymer film surfaces and the inherent versatility of surface-initiated ATRP, the surface functionality of polymer films can be precisely tailored. - Highlights: ► Atom transfer radical polymerization initiators were simply immobilized. ► Different functional polymer brushes were readily prepared. ► Their block copolymer brushes were also readily prepared

Ionic transport in polypyrrole doped with dianionic counterion hexafluorosilicate

International Nuclear Information System (INIS)

Kepas, Anna; Grzeszczuk, Maria

2006-01-01

Electrodeposition, redox switching, ion transport/exchange, surface topography for a thin polypyrrole film on gold in aqueous sodium hexafluorosilicate solution is reported. The properties have been compared with that corresponding to polypyrrole doped with hexafluoroaluminate and related systems. The dianionic counterion enhances electroactivity of the polymer, slows down ionic transport in the polymer phase, makes a strong impact on a surface structure of the polymer film. An improvement in stability of the anion-exchanger properties is observed. Several electroanalytical methods: chronoamperometry (Canada), cyclic voltammetry (CV), electrochemical quartz crystal microbalance (EQCM), electrochemical impedance spectroscopy (EIS), and a microscopic examination of the polymer film surface by scanning electron microscopy (SEM) have been used in the experimental work

Thermal properties and stabilities of polymer thin films

International Nuclear Information System (INIS)

Kanaya, Toshiji; Kawashima, Kazuko; Inoue, Rintaro; Miyazaki, Tsukasa

2009-01-01

Recent extensive studies have revealed that polymer thin films showed very interesting but unusual thermal properties and stabilities. In the article we show that X-ray reflectivity and neutron reflectivity are very powerful tools to study the anomalous properties of polymer thin films. (author)

Semiconductor-nanocrystal/conjugated polymer thin films

Science.gov (United States)

Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

2014-06-17

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

Structural and optical properties of Na-doped ZnO films

Science.gov (United States)

Akcan, D.; Gungor, A.; Arda, L.

2018-06-01

Zn1-xNaxO (x = 0.0-0.05) solutions have been synthesized by the sol-gel technique using Zinc acetate dihydrate and Sodium acetate which were dissolved into solvent and chelating agent. Na-doped ZnO nanoparticles were obtained from solutions to find phase and crystal structure. Na-doped ZnO films have been deposited onto glass substrate by using sol-gel dip coating system. The effects of dopant concentration on the structure, morphology, and optical properties of Na-doped ZnO thin films deposited on glass substrate are investigated. Characterization of Zn1-xNaxO nanoparticles and thin films are examined using differential thermal analysis (DTA)/thermogravimetric analysis (TGA), Scanning electron microscope (SEM) and X-Ray diffractometer (XRD). Optical properties of Zn1-xNaxO thin films were obtained by using PG Instruments UV-Vis-NIR spectrophotometer in 190-1100 nm range. The structure, morphology, and optical properties of thin films are presented.

Film packed lithium-ion battery with polymer stabilizer

International Nuclear Information System (INIS)

Satoh, Masaharu; Nakahara, Kentaro

2004-01-01

The 1600 mAh class of film packed lithium-ion battery has been fabricated with the polymer stabilizer. The adhesive polymer covered with fluorinated polymer beads enables to penetrate into the prismatically wounded jerry-roll layers and connects the electrode layers and separator film. The battery demonstrates the improved properties after repeating the charge and discharge processes and should be useful for the various electronics equipment such as notebook type computer

Polymer solar cells with efficiency >10% enabled via a facile solution-processed Al-doped ZnO electron transporting layer

KAUST Repository

Jagadamma, Lethy Krishnan

2015-10-05

The present work details a facile and low-temperature (125C) solution-processed Al-doped ZnO (AZO) buffer layer functioning very effectively as electron accepting/hole blocking layer for a wide range of polymer:fullerene bulk heterojunction systems, and yielding power conversion efficiency in excess of 10% (8%) on glass (plastic) substrates. We show that ammonia addition to the aqueous AZO nanoparticle solution is a critically important step toward producing compact and smooth thin films which partially retain the aluminum doping and crystalline order of the starting AZO nanocrystals. The ammonia treatment appears to reduce the native defects via nitrogen incorporation, making the AZO film a very good electron transporter and energetically matched with the fullerene acceptor. Importantly, highly efficient solar cells are achieved without the need for additional surface chemical passivation or modification, which has become an increasingly common route to improving the performance of evaporated or solution-processed ZnO ETLs in solar cells.

Local Electrical Response in Alkaline-Doped Electrodeposited CuInSe2/Cu Films

Directory of Open Access Journals (Sweden)

Javier A. Barón-Miranda

2016-12-01

Full Text Available The local electrical response in alkaline-doped CuInSe2 films prepared by single-step electrodeposition onto Cu substrates was studied by current-sensing atomic force microscopy. The CuInSe2 (CIS films were prepared from single baths containing the dopant ions (Li, Na, K or Cs and were studied by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and photocurrent response. Increased crystallinity and surface texturing as the ion size increased were observed, as well as an enhanced photocurrent response in Cs-doped CIS. Li- and Na-doped films had larger conductivity than the undoped film while the K- and Cs-doped samples displayed shorter currents and the current images indicated strong charge accumulation in the K- and Cs-doped films, forming surface capacitors. Corrected current-sensing AFM IV curves were adjusted with the Shockley equation.

Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

Science.gov (United States)

Yin, H.; Ziemann, P.

2014-06-01

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

Optical and structural properties of Cu-doped β-Ga2O3 films

International Nuclear Information System (INIS)

Zhang Yijun; Yan Jinliang; Li Qingshan; Qu Chong; Zhang Liying; Xie Wanfeng

2011-01-01

Graphical abstract: Highlights: → We prepare polycrystalline Cu-doped β-Ga2O3 films. → Cu dopants cause poor crystal quality and shrinkage of the optical band gap. → Cu-doping enhances the UV and blue emission. → A new blue emission peak centre at 475 nm appears by Cu-doping. → Cu dopants decrease the optical transmittance. - Abstract: The intrinsic and Cu-doped β-Ga 2 O 3 films were grown on Si and quartz substrates by RF magnetron sputtering in an argon and oxygen mixture ambient. The effects of the Cu doping and the post thermal annealing on the optical and structural properties of the β-Ga 2 O 3 films were studied. The surface morphology, microstructure, optical transmittance, optical absorption, optical energy gap and photoluminescence of the β-Ga 2 O 3 films were significantly changed after Cu-doping. After post thermal annealing, Polycrystalline β-Ga 2 O 3 films were obtained, the transmittance decreased. After Cu-doping, the grain size decreased, the crystal quality deteriorated and the optical band gap shrunk. The UV, blue and green emission bands were observed and discussed. The UV and blue emission were enhanced and a new blue emission peak centred at 475 nm appeared by Cu-doping.

Nitrogen doping in atomic layer deposition grown titanium dioxide films by using ammonium hydroxide

Energy Technology Data Exchange (ETDEWEB)

Kaeaeriaeinen, M.-L., E-mail: marja-leena.kaariainen@lut.fi; Cameron, D.C.

2012-12-30

Titanium dioxide films have been created by atomic layer deposition using titanium chloride as the metal source and a solution of ammonium hydroxide in water as oxidant. Ammonium hydroxide has been used as a source of nitrogen for doping and three thickness series have been deposited at 350 Degree-Sign C. A 15 nm anatase dominated film was found to possess the highest photocatalytic activity in all film series. Furthermore almost three times better photocatalytic activity was discovered in the doped series compared to undoped films. The doped films also had lower resistivity. The results from X-ray photoemission spectroscopy showed evidence for interstitial nitrogen in the titanium dioxide structure. Besides, there was a minor red shift observable in the thickest samples. In addition the film conductivity was discovered to increase with the feeding pressure of ammonium hydroxide in the oxidant precursor. This may indicate that nitrogen doping has caused the decrease in the resistivity and therefore has an impact as an enhanced photocatalytic activity. The hot probe test showed that all the anatase or anatase dominant films were p-type and all the rutile dominant films were n-type. The best photocatalytic activity was shown by anatase-dominant films containing a small amount of rutile. It may be that p-n-junctions are formed between p-type anatase and n-type rutile which cause carrier separation and slow down the recombination rate. The combination of nitrogen doping and p-n junction formation results in superior photocatalytic performance. - Highlights: Black-Right-Pointing-Pointer We found all N-doped and undoped anatase dominating films p-type. Black-Right-Pointing-Pointer We found all N-doped and undoped rutile dominating films n-type. Black-Right-Pointing-Pointer We propose that p-n junctions are formed in anatase-rutile mixture films. Black-Right-Pointing-Pointer We found that low level N-doping has increased TiO{sub 2} conductivity. Black

Hall effect of K-doped superconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)

2013-09-15

We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.

Indium doped zinc oxide thin films obtained by electrodeposition

International Nuclear Information System (INIS)

Machado, G.; Guerra, D.N.; Leinen, D.; Ramos-Barrado, J.R.; Marotti, R.E.; Dalchiele, E.A.

2005-01-01

Indium doped ZnO thin films were obtained by co-electrodeposition (precursor and dopant) from aqueous solution. XRD analysis showed typical patterns of the hexagonal ZnO structure for both doped and undoped films. No diffraction peaks of any other structure such as In 2 O 3 or In(OH) 3 were found. The incorporation of In into the ZnO film was verified by both EDS and XPS measurements. The bandgap energy of the films varied from 3.27 eV to 3.42 eV, increasing with the In concentration in the solution. This dependence was stronger for the less cathodic potentials. The incorporation of In into the film occurs as both, an In donor state in the ZnO grains and as an amorphous In 2 O 3 at the grain boundaries

An investigation on the In doping of ZnO thin films by spray pyrolysis

Science.gov (United States)

Mahesh, Devika; Kumar, M. C. Santhosh

2018-04-01

Indium doped zinc oxide (IGZO)thin films are gaining much interest owing to its commercial application as transparent conductive oxide thin films. In the current study thin films indium doped ZnO thin films have been deposited on glass substrates by chemical spray pyrolysis technique with an indium concentration of 1, 2.5 and 4% in Zinc source. The films show a peak shift in the X-Ray Diffraction patterns with varying indium doping concentration. The (101) peak was enhanced for the 2.5 % indium doped films and variation in grain size with the different doping levels was studied. The as-deposited films are uniform and shown high transparency (>90%) in the visible region. Average thicknesses of films are found to be 800nm, calculated using the envelope method. The film with 2.5 % of indium content was found to be highly conducting than the rest, since for the lower and higher concentrations the conductivity was possibly halted by the limit in carrier concentration and indium segregation in the grain boundaries respectively. The enhancement of mobility and carrier concentration was clearly seen in the optimum films.

Film packed lithium-ion battery with polymer stabilizer

Energy Technology Data Exchange (ETDEWEB)

Satoh, Masaharu; Nakahara, Kentaro [NEC Corp., Environment and Material Research Labs., Kawasaki, Kanagawa (Japan)

2004-11-30

The 1600 mAh class of film packed lithium-ion battery has been fabricated with the polymer stabilizer. The adhesive polymer covered with fluorinated polymer beads enables to penetrate into the prismatically wound jerry-roll layers and connects the electrode layers and separator film. The battery demonstrates the improved properties after repeating the charge and discharge processes and should be useful for the various electronic equipment such as notebook type computers. (Author)

Influence of spin methods on the performance of polymer light-emitting devices

International Nuclear Information System (INIS)

Liu Chen; Zou Xuecheng; Yin Sheng; Zhang Wuxing

2004-01-01

Using the doped polymeric system composed of host poly(N-vinylcarbazole) and dopant coumarin 6, the morphology, phase distribution, and polymer molecular conformation of polymer films were investigated with optical and atomic force microscopy, UV-visible absorption spectra, and Fourier transform infrared reflectance spectroscopy. Results show that the film morphology and dopant distribution in the polymer films cast with the conventional method are dependent on the positions of polymer films. To avoid this negative effect, a new spin method was put forward by locating the specimen at an appropriate distance from the center of the spin plate during spin casting. It is found that polymer films prepared with the new method are more uniform and their electroluminescence performances are independent of the positions

Effect of Sr doping on LaTiO3 thin films

International Nuclear Information System (INIS)

Vilquin, B.; Kanki, T.; Yanagida, T.; Tanaka, H.; Kawai, T.

2005-01-01

We report on the electric properties of La 1-x Sr x TiO 3 (0 ≤ x ≤ 0.5) thin films fabricated by pulsed laser deposition method. Crystallographic measurement of the thin films showed the epitaxial c-axis perovskite structure. The electric property of LaTiO 3 thin film, which is a typical Mott insulative material in bulk, showed insulative behaviour, while the Sr-doped films showed metallic conduction suffering electron-electron scattering. Below x = 0.1, the major carrier type was identified to be hole, and switched to electron with further increasing Sr-doping above x = 0.15. In fact, the switching from p-type to n-type for La 1-x Sr x TiO 3 thin films is first demonstrated in this study. The transition suggests that effective Coulomb gap vanishes due to over-additional Sr doping

Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

International Nuclear Information System (INIS)

Sahin, Bünyamin; Kaya, Tolga

2016-01-01

Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

Energy Technology Data Exchange (ETDEWEB)

Sahin, Bünyamin, E-mail: sahin38@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay, 31034 (Turkey); School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Kaya, Tolga [School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, 48859 (United States)

2016-01-30

Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

Structural and vibrational investigations of Nb-doped TiO2 thin films

International Nuclear Information System (INIS)

Uyanga, E.; Gibaud, A.; Daniel, P.; Sangaa, D.; Sevjidsuren, G.; Altantsog, P.; Beuvier, T.; Lee, Chih Hao; Balagurov, A.M.

2014-01-01

Highlights: • We studied the evolutions of structure for TiO 2 thin film as changes with Nb doping and temperatures. • Up to 800 °C, the grain size of Nb 0.1 Ti 0.9 O 2 is smaller than for pure TiO 2 because doped Nb hinders the growth of the TiO 2 grains. • There was no formation of the rutile phase at high temperature. • Nb doped TiO 2 films have high electron densities at 400–700 °C. • Nb dope extends the absorbance spectra of TiO 2 which leads to the band gap reduce. - Abstract: Acid-catalyzed sol–gel and spin-coating methods were used to prepare Nb-doped TiO 2 thin film. In this work, we studied the effect of niobium doping on the structure, surface, and absorption properties of TiO 2 by energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), X-ray reflectometry (XRR), X-ray photoelectron spectroscopy (XPS), Raman, and UV–vis absorption spectroscopy at various annealing temperatures. EDX spectra show that the Nb:Ti atomic ratios of the niobium-doped titania films are in good agreement with the nominal values (5 and 10%). XPS results suggest that charge compensation is achieved by the formation of Ti vacancies. Specific niobium phases are not observed, thus confirming that niobium is well incorporated into the titania crystal lattice. Thin films are amorphous at room temperature and the formation of anatase phase appeared at an annealing temperature close to 400 °C. The rutile phase was not observed even at 900 °C (XRD and Raman spectroscopy). Grain sizes and electron densities increased when the temperature was raised. Nb-doped films have higher electron densities and lower grain sizes due to niobium doping. Grain size inhibition can be explained by lattice stress induced by the incorporation of larger Nb 5+ ions into the lattice. The band gap energy of indirect transition of the TiO 2 thin films was calculated to be about 3.03 eV. After niobium doping, it decreased to 2.40 eV

Surface analysis of the selective excimer laser patterning of a thin PEDOT:PSS film on flexible polymer films

Energy Technology Data Exchange (ETDEWEB)

Schaubroeck, David, E-mail: David.Schaubroeck@elis.ugent.be [Center for Microsystems Technology (CMST), imec and Ghent University, Technologiepark 15, B-9052 Ghent (Belgium); De Smet, Jelle; Willems, Wouter [Center for Microsystems Technology (CMST), imec and Ghent University, Technologiepark 15, B-9052 Ghent (Belgium); Cools, Pieter; De Geyter, Nathalie; Morent, Rino [Research Unit Plasma Technology (RUPT), Department of Applied Physics, Faculty of Engineering, Ghent University, Sint-Pietersnieuwstraat 41, B-9000 Ghent (Belgium); De Smet, Herbert; Van Steenbeerge, Geert [Center for Microsystems Technology (CMST), imec and Ghent University, Technologiepark 15, B-9052 Ghent (Belgium)

2016-07-15

Highlights: • Laser patterning of thin film PEDOT:PSS on polymer foils is characterized in great detail. • PEDOT:PSS does not need to be fully removed to create electrically insulating patterns. • The underlying polymer foil influences the ablation behavior. - Abstract: Fast patterning of highly conductive polymers like PEDOT:PSS (poly (3,4-ethylene dioxythiophene): polystyrene sulfonate) with lasers can contribute to the development of industrial production of liquid crystal displays on polymer foils. In this article, the selective UV laser patterning of a PEDOT:PSS film on flexible polymer films is investigated. Based on their optical properties, three polymer films are investigated: polyethylene terephthalate (PET), polymethyl methacrylate (PMMA) and cellulose triacetate (TAC). Ablation parameters for a 110 nm PEDOT:PSS film on these polymer films are optimized. A detailed study of the crater depth, topography and surface composition are provided using optical profilometry, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS), respectively. The electrical insulation of the lines is measured and correlated to the crater analyses for different laser settings. Finally, potential ablation parameters for each of the polymer films are derived.

Spectral-luminescent investigation of polymers doped with europium trisphenoyltrifluoroacetonate compound with 1,10-phenanthroline

International Nuclear Information System (INIS)

Karasev, V.E.; Mirochnik, A.G.; Shchelokov, R.N.

1983-01-01

Spectral-luminescent characteristics of europium tristhenoyltrifluoroacetonate with 1.10-phenanthpoline in polystyrepe and polyvinyl chloride are investigated. E 4 (TTA) 3 phen during introduction into polymers preserves its composition and structure. Weak temperature dependence of half-Width of luminescent lines qualitatively different from the case of crystal chelate is characteristic for polymers doped with E 4 (TTA) 3 xphen. Investigation into temperature dependence of E 4 3+ luminescent intensity in chelate doped polymers proves the conclusion on weakening processes of excitation energy relaxation by vibration constituents of close and far environment during chelate introduction into polymers

Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

International Nuclear Information System (INIS)

Shinde, S.S.; Shinde, P.S.; Oh, Y.W.; Haranath, D.; Bhosale, C.H.; Rajpure, K.Y.

2012-01-01

Highlights: ► The ecofriendly deposition of Ga-doped zinc oxide. ► Influence of Ga doping onto physicochemical properties in aqueous media. ► Electron–phonon coupling by Raman. ► Chemical bonding structure and valence band analysis by XPS. - Abstract: Ga-doped ZnO thin films are synthesized by chemical spray pyrolysis onto corning glass substrates in aqueous media. The influence of gallium doping on to the photoelectrochemical, structural, Raman, XPS, morphological, optical, electrical, photoluminescence and thermal properties have been investigated in order to achieve good quality films. X-ray diffraction study depicts the films are polycrystalline and fit well with hexagonal (wurtzite) crystal structure with strong orientations along the (0 0 2) and (1 0 1) planes. Presence of E 2 high mode in Raman spectra indicates that the gallium doping does not change the wurtzite structure. The coupling strength between electron and LO phonon has experimentally estimated. In order to understand the chemical bonding structure and electronic states of the Ga-doped ZnO thin films XPS analysis have been studied. SEM images shows the films are adherent, compact, densely packed with hexagonal flakes and spherical grains. Optical transmittance and reflectance measurements have been carried out. Room temperature PL spectra depict violet, blue and green emission in deposited films. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant in these polycrystalline films.

Electro-synthesis of novel nanostructured PEDOT films and their application as catalyst support

Directory of Open Access Journals (Sweden)

Yan Yushan

2011-01-01

Full Text Available Abstract Poly(3,4-ethylenedioxythiophene (PEDOT films doped with nitric and chlorine ions have been electrochemically deposited simply by a one-step electrochemical method in an aqueous media in the absence of any surfactant. The fabricated PEDOT films were characterized by scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The results indicate that the hierarchical structured PEDOT film doped with nitric ions displays a 'lunar craters' porous morphology consisting of PEDOT nano-sheets with a thickness of less than 2 nm. The effect of counter ions on the electro-polymerization, the electrochemistry, and the morphology of the polymer film was studied. Compared with PEDOT film doped with nitric acid, PEDOT film deposited in the presence of chlorine ions shows irregular morphology and less electrochemical activity. The specific nanostructure of the polymer was further studied as catalyst support for platinum nanoparticles to methanol electro-oxidation.

Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

Science.gov (United States)

Sahin, Bünyamin; Kaya, Tolga

2016-01-01

In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current-voltage (I-V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

An investigation of the Nb doping effect on structural, morphological, electrical and optical properties of spray deposited F doped SnO2 films

Science.gov (United States)

Turgut, G.; Keskenler, E. F.; Aydın, S.; Yılmaz, M.; Doǧan, S.; Düzgün, B.

2013-03-01

F and Nb + F co-doped SnO2 thin films were deposited on glass substrates by the spray pyrolysis method. The microstructural, morphological, electrical and optical properties of the 10 wt% F doped SnO2 (FTO) thin films were investigated specifically for niobium (Nb) doping in the range of 0-4 at.% with 1 at.% steps. As shown by the x-ray diffraction patterns, the films exhibited a tetragonal cassiterite structure with (200) preferential orientation. It was observed that grain sizes of the films for (200) and (301) peaks depended on the Nb doping concentration and varied in the range of 25.11-32.19 and 100.6-183.7 nm, respectively. The scanning electron microscope (SEM) micrographs showed that the FTO films were made of small pyramidal grains, while doubly doped films were made of small pyramidal grains and big polyhedron grains. From electrical studies, although 1 at.% Nb doped FTO films have the lowest sheet resistance and resistivity values, the highest figure-of-merit and optical band gap values obtained for FTO films were 16.2 × 10-2 Ω-1 and 4.21 eV, respectively. Also, infrared reflectivity values of the films were in the range of 97.39-98.98%. These results strongly suggest that these films are an attractive candidate for various optoelectronic applications and for photothermal conversion of solar energy.

Two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films

International Nuclear Information System (INIS)

Xu, Linhua; Zheng, Gaige; Zhao, Lilong; Pei, Shixin

2015-01-01

Ag-doped ZnO thin films were prepared by a sol–gel method. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), UV–vis and photoluminescence spectra. The results show that the Ag in the ZnO thin films annealed at 500 °C for 1 h substitutes for Zn and exists in the form of Ag + ion (Ag Zn ) while the Ag in the ZnO thin films without a post-annealing mainly exists in the form of simple substance (Ag 0 ). The incorporation of Ag indeed can improve the ultraviolet emission of ZnO thin films and suppress the visible emissions at the same time. However, the mechanisms on the ultraviolet emission enhancement in the annealed and unannealed Ag-doped ZnO thin films are very different. As for the post-annealed Ag-doped ZnO thin films, the UV emission enhancement maybe mainly results from more electron–hole pairs (excitons) due to Ag-doping while for the unannealed Ag-doped ZnO thin films; the UV emission enhancement is attributed to the resonant coupling between exciton emission in ZnO and localized surface plasmon in Ag nanoparticles. - Highlights: • Ag-doped ZnO thin films have been prepared by the sol–gel method. • Ag-doping can enhance ultraviolet emission of ZnO thin films and depress the visible emissions at the same time. • There are two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films. • The UV emission enhancement from the resonant coupling between excitonic emissions and localized surface plasmon in Ag nanoparticle is very attractive

Doping site dependent thermoelectric properties of epitaxial strontium titanate thin films

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Mehdizadeh Dehkordi, Arash; Tritt, Terry M.; Alshareef, Husam N.

2014-01-01

We demonstrate that the thermoelectric properties of epitaxial strontium titanate (STO) thin films can be improved by additional B-site doping of A-site doped ABO3 type perovskite STO. The additional B-site doping of A-site doped STO results in increased electrical conductivity, but at the expense of Seebeck coefficient. However, doping on both sites of the STO lattice significantly reduces the lattice thermal conductivity of STO by adding more densely and strategically distributed phononic scattering centers that attack wider phonon spectra. The additional B-site doping limits the trade-off relationship between the electrical conductivity and total thermal conductivity of A-site doped STO, leading to an improvement in the room-temperature thermoelectric figure of merit, ZT. The 5% Pr3+ and 20% Nb5+ double-doped STO film exhibits the best ZT of 0.016 at room temperature. This journal is

Intrinsically conductive polymer thin film piezoresistors

DEFF Research Database (Denmark)

Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

2008-01-01

We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

Microstructural and electrical characteristics of rare earth oxides doped ZnO varistor films

Science.gov (United States)

Jiao, Lei; Mei, Yunzhu; Xu, Dong; Zhong, Sujuan; Ma, Jia; Zhang, Lei; Bao, Li

2018-02-01

ZnO-Bi2O3 varistor films doped with two kinds of rare earth element oxides (Lu2O3 and Yb2O3) were prepared by the sol-gel method. The effects of Lu2O3/Yb2O3 doping on the microstructure and electrical characteristics of ZnO-Bi2O3 varistor films were investigated. All samples show a homogenized morphology and an improved nonlinear relationship between the electric field (E) and current density (I). Both Yb2O3 and Lu2O3 doping can decrease the grain size of ZnO-Bi2O3 varistor films and improve the electrical properties, which have a positive effect on the development of ZnO varistor ceramics. Yb2O3 doping significantly increases the dielectric constant at low frequency. 0.2 mol. % Yb2O3 doped ZnO-Bi2O3 varistor films exhibit the highest nonlinear coefficient (2.5) and the lowest leakage current (328 μA) among Lu2O3/Yb2O3 doped ZnO-Bi2O3 varistor films. Similarly, 0.1 mol. % Lu2O3 doping increases the nonlinear coefficient to 1.9 and decrease the leakage current to 462 μA.

A short literature survey on iron and cobalt ion doped TiO{sub 2} thin films and photocatalytic activity of these films against fungi

Energy Technology Data Exchange (ETDEWEB)

Tatl Latin-Small-Letter-Dotless-I dil, Ilknur [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Bacaks Latin-Small-Letter-Dotless-I z, Emin [Department of Physics, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey); Buruk, Celal Kurtulus [Department of Microbiology, Faculty of Medicine, Karadeniz Technical University, 61080 Trabzon (Turkey); Breen, Chris [Materials and Engineering Research Institution, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Soekmen, Muenevver, E-mail: msokmen@ktu.edu.tr [Department of Chemistry, Faculty of Science, Karadeniz Technical University, 61080 Trabzon (Turkey)

2012-03-15

Highlights: Black-Right-Pointing-Pointer Co or Fe doped TiO{sub 2} thin films were prepared by sol-gel method. Black-Right-Pointing-Pointer We obtained lower E{sub g} values for Fe-doped and Co-TiO{sub 2} thin films. Black-Right-Pointing-Pointer Doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Black-Right-Pointing-Pointer Photocatalytic killing effect of the doped TiO{sub 2} thin films on C. albicans and A. niger was significantly higher than undoped TiO{sub 2} thin film for short exposure periods. - Abstract: In this study, a short recent literature survey which concentrated on the usage of Fe{sup 3+} or Co{sup 2+} ion doped TiO{sub 2} thin films and suspensions were summarized. Additionally, a sol-gel method was used for preparation of the 2% Co or Fe doped TiO{sub 2} thin films. The surface of the prepared materials was characterised using scanning-electron microscopy (SEM) combined with energy dispersive X-ray (EDX) analysis and band gap of the films were calculated from the transmission measurements that were taken over the range of 190 and 1100 nm. The E{sub g} value was 3.40 eV for the pure TiO{sub 2}, 3.00 eV for the Fe-doped TiO{sub 2} film and 3.25 eV for Co-TiO{sub 2} thin film. Iron or cobalt doping at lower concentration produce more uniformed particles and doping greatly affected the size and shape of the TiO{sub 2} nanoparticles. Photocatalytic killing effect of the 2% Co doped TiO{sub 2} thin film on Candida albicans was significantly higher than Fe doped TiO{sub 2} thin film for short and long exposure periods. Doped thin films were more effective on Aspergillus niger for short exposure periods.

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

2015-09-30

Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

Nanoparticle-doped Polymer Foils for Use in Solar Control Glazing

Science.gov (United States)

Smith, G. B.; Deller, C. A.; Swift, P. D.; Gentle, A.; Garrett, P. D.; Fisher, W. K.

2002-04-01

Since nanoparticles can provide spectrally selective absorption without scattering they can be used to dope polymers for use in windows, to provide a clear view while strongly attenuating both solar heat gain and UV, at lower cost than alternative technologies. The underlying physics and how it influences the choice and concentration of nanoparticle materials is outlined. Spectral data, visible and solar transmittance, and solar heat gain coefficient are measured for clear polymers and some laminated glass, in which the polymer layer is doped with conducting oxide nanoparticles. Simple models are shown to apply making general optical design straightforward. Use with clear glass and tinted glass is considered and performance shown to match existing solar control alternatives. A potential for widespread adoption in buildings and cars is clearly demonstrated, and scopes for further improvements are identified, so that ultimately both cost and performance are superior.

Nanoparticle-doped Polymer Foils for Use in Solar Control Glazing

International Nuclear Information System (INIS)

Smith, G.B.; Deller, C.A.; Swift, P.D.; Gentle, A.; Garrett, P.D.; Fisher, W.K.

2002-01-01

Since nanoparticles can provide spectrally selective absorption without scattering they can be used to dope polymers for use in windows, to provide a clear view while strongly attenuating both solar heat gain and UV, at lower cost than alternative technologies. The underlying physics and how it influences the choice and concentration of nanoparticle materials is outlined. Spectral data, visible and solar transmittance, and solar heat gain coefficient are measured for clear polymers and some laminated glass, in which the polymer layer is doped with conducting oxide nanoparticles. Simple models are shown to apply making general optical design straightforward. Use with clear glass and tinted glass is considered and performance shown to match existing solar control alternatives. A potential for widespread adoption in buildings and cars is clearly demonstrated, and scopes for further improvements are identified, so that ultimately both cost and performance are superior

Structural, morphological and optical properties of spray deposited Mn-doped CeO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Pavan Kumar, CH.S.S.; Pandeeswari, R.; Jeyaprakash, B.G., E-mail: jp@ece.sastra.edu

2014-07-25

Highlights: • Spray deposited undoped and Mn-doped CeO{sub 2} thin films were polycrystalline. • Complete changeover of surface morphology upon 4 wt% Mn doping. • 4 wt% Mn-doped CeO{sub 2} thin film exhibited a hydrophobic nature. • Optical band-gap decreases beyond 2 wt% Mn doping. - Abstract: Cerium oxide and manganese (Mn) doped cerium oxide thin films on glass substrates were prepared by home built spray pyrolysis system. The effect of Mn doping on the structural, morphological and optical properties of CeO{sub 2} films were studied. It was found that both the undoped and doped CeO{sub 2} films were polycrystalline in nature but the preferential orientation and grain size changed upon doping. Atomic force micrograph showed a complete changeover of surface morphology from spherical to flake upon doping. A water contact angle result displayed the hydrophobic nature of the doped CeO{sub 2} film. Optical properties indicated an increase in band-gap and a decrease in transmittance upon doping owing to Moss–Burstein effect and inverse Moss–Burstein effects. Other optical properties such as refractive index, extinction coefficient and dielectric constant as a function of doping were analysed and reported.

Investigation of Physical Properties and Electrochemical Behavior of Nitrogen-Doped Diamond-Like Carbon Thin Films

Directory of Open Access Journals (Sweden)

Rattanakorn Saensak

2014-03-01

Full Text Available This work reports characterizations of diamond-like carbon (DLC films used as electrodes for electrochemical applications. DLC thin films are prepared on glass slides and silicon substrates by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD using a gas mixture of methane and hydrogen. In addition, the DLC films are doped with nitrogen in order to reduce electrical resistivity. Compared to the undoped DLC films, the electrical resistivity of nitrogen-doped (N-doped DLC films is decreased by three orders of magnitude. Raman spectroscopy and UV/Vis spectroscopy analyses show the structural transformation in N-doped DLC films that causes the reduction of band gap energy. Contact angle measurement at N-doped DLC films indicates increased hydrophobicity. The results obtained from the cyclic voltammetry measurements with Fe(CN63-/Fe(CN64- redox species exhibit the correlation between the physical properties and electrochemical behavior of DLC films.

Synthesis and electrochemical properties of Ti-doped DLC films by a hybrid PVD/PECVD process

Science.gov (United States)

Jo, Yeong Ju; Zhang, Teng Fei; Son, Myoung Jun; Kim, Kwang Ho

2018-03-01

Low electrical conductivity and poor adhesion to metallic substrates are the main drawbacks of diamond-like carbon (DLC) films when used in electrode applications. In this study, Ti-doped DLC films with various Ti contents were synthesized on metal Ti substrates by a hybrid PVD/PECVD process, where PECVD was used for deposition of DLC films and PVD was used for Ti doping. The effects of the Ti doping ratio on the microstructure, adhesion strength, and electrical and electrochemical properties of the DLC films were systematically investigated. An increase in the Ti content led to increased surface roughness and a higher sp2/sp3 ratio of the Ti-DLC films. Ti atoms existed as amorphous-phase Ti carbide when the Ti doping ratio was less than 2.8 at.%, while the nanocrystalline TiC phase was formed in DLC films when the Ti doping ratio was exceeded 4.0 at.%. The adhesion strength, electrical resistivity, electrochemical activity and reversibility of the DLC films were greatly improved by Ti doping. The influence of Ti doping ratio on the electrical and electrochemical properties of the DLC films were also investigated and the best performance was obtained at a Ti content of 2.8 at.%.

Investigation of blue luminescence in Mg doped AlN films

Energy Technology Data Exchange (ETDEWEB)

Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn

2015-02-05

Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.

Surface analysis of the selective excimer laser patterning of a thin PEDOT:PSS film on flexible polymer films

Science.gov (United States)

Schaubroeck, David; De Smet, Jelle; Willems, Wouter; Cools, Pieter; De Geyter, Nathalie; Morent, Rino; De Smet, Herbert; Van Steenbeerge, Geert

2016-07-01

Fast patterning of highly conductive polymers like PEDOT:PSS (poly (3,4-ethylene dioxythiophene): polystyrene sulfonate) with lasers can contribute to the development of industrial production of liquid crystal displays on polymer foils. In this article, the selective UV laser patterning of a PEDOT:PSS film on flexible polymer films is investigated. Based on their optical properties, three polymer films are investigated: polyethylene terephthalate (PET), polymethyl methacrylate (PMMA) and cellulose triacetate (TAC). Ablation parameters for a 110 nm PEDOT:PSS film on these polymer films are optimized. A detailed study of the crater depth, topography and surface composition are provided using optical profilometry, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS), respectively. The electrical insulation of the lines is measured and correlated to the crater analyses for different laser settings. Finally, potential ablation parameters for each of the polymer films are derived.

Electrochemical properties of polypyrrole/polyfuran polymer composite electrode

International Nuclear Information System (INIS)

Cha, Seong Keuck

1998-01-01

Poly pyrrole polymer(ppy) has an excellent electrical conductivity and can be easily polymerized on anode to give various morphology according to doped anion on electroactive sites. To improve the properties of brittleness, ageing and hydrophobicity, poly furan polymer(pfu) having a high initiation potential was anodically implanted in this porous ppy film matrix to get the Pt/ppy/pfu(x)type of polymer campsite electrode. Cyclic voltammetry and electrochemical impedance methods were used to these electrode, where PF 6 - , BF 4 - , and ClO 4 - ions were employed as dopants. The composition of the pfu(x) at the electrode was changed from 0 to 1.10, but the range was useful only at 0.1 to 0.2 as the redox electrode. The polymer composite electrode doped with PF 6 - was better in charge transfer resistance by a factor of 40 times and in double layer capacitance by a factor of 20 times than others. The charge transfer in the polymer film of the electrode was influenced on frequency change and equivalent circuit of this electrode had Warburg impedance including mass transfer

Effect of B doping on optical, electrical properties and defects of ZnO films

Energy Technology Data Exchange (ETDEWEB)

Mao, Caiying [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing, 400044 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing, 400044 (China); Zhang, Hong; Li, Wanjun [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331 (China); Wu, Fang, E-mail: fang01234@163.com [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing, 400044 (China); Qin, Guoping [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331 (China); Ruan, Haibo, E-mail: rhbcqu@aliyun.com [Chongqing Key Laboratory of Micro/Nano Materials Engineering and Technology, Research Center for Materials Interdisciplinary Sciences, Chongqing University of Arts and Sciences, Chongqing, 402160 (China); Kong, Chunyang, E-mail: kchy@163.com [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331 (China)

2016-08-15

Boron doped ZnO (BZO) films with B content in the range of 0–6 at.% were deposited on quartz glass substrates by RF magnetron sputtering technique. The effects of B doping content on microstructure, optical and electrical properties of BZO films were systematically investigated by XRD, SEM, AFM, XPS, PL, UV–vis–near infrared spectrophotometer and Hall-effect measurement, respectively. It is found that the crystal quality of ZnO films can be improved as B doping content increases to no larger than 4 at.% and will be deteriorated at higher B doping content. The grain size and surface roughness of the films reduce with the increase of B doping content. The BZO films exhibit tensile stress and the stress increases with B content. The transmittance of the BZO films is revealed to be 90% in the visible region. As the B doping content increases from 0 to 6 at.%, the optical band gap of BZO films enhances from 3.28 to 3.57 eV, which is found to increase linearly with the tensile stress in the films. The lowest resistivity of 1.58 × 10{sup −3} (Ω cm) is obtained at 2 at.% B doping content. XPS and PL analyses demonstrated that B doping can promote the formation of defects of zinc interstitials (Zn{sub i}) and oxygen vacancies (V{sub O}). - Highlights: • The relationship of band gap (E{sub g}) and stress (σ) in BZO is deduced. • XPS and PL illustrate B doping can promote the formation of Zn{sub i} and V{sub O} in BZO. • The lowest resistivity (1.58 × 10{sup −3} Ω cm) is obtained at 2 at.% B content.

In-situ boron doping of chemical-bath deposited CdS thin films

International Nuclear Information System (INIS)

Khallaf, Hani; Park, S.; Schulte, Alfons; Chai, Guangyu; Lupan, Oleg; Chow, Lee; Heinrich, Helge

2009-01-01

In-situ boron doping of CdS using chemical-bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present a successful approach towards B doping of CdS using CBD, where a resistivity as low as 1.7 x 10 -2 Ωcm and a carrier density as high as 1.91 x 10 19 cm -3 were achieved. The bandgap of B-doped films was found to slightly decrease as the[B]/[Cd] ratio in the solution increases. X-ray diffraction studies showed B 3+ ions likely enter the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by micro-Raman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were unaffected by B doping. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Highly Enhanced Raman Scattering on Carbonized Polymer Films.

Science.gov (United States)

Yoon, Jong-Chul; Hwang, Jongha; Thiyagarajan, Pradheep; Ruoff, Rodney S; Jang, Ji-Hyun

2017-06-28

We have discovered a carbonized polymer film to be a reliable and durable carbon-based substrate for carbon enhanced Raman scattering (CERS). Commercially available SU8 was spin coated and carbonized (c-SU8) to yield a film optimized to have a favorable Fermi level position for efficient charge transfer, which results in a significant Raman scattering enhancement under mild measurement conditions. A highly sensitive CERS (detection limit of 10 -8 M) that was uniform over a large area was achieved on a patterned c-SU8 film and the Raman signal intensity has remained constant for 2 years. This approach works not only for the CMOS-compatible c-SU8 film but for any carbonized film with the correct composition and Fermi level, as demonstrated with carbonized-PVA (poly(vinyl alcohol)) and carbonized-PVP (polyvinylpyrollidone) films. Our study certainly expands the rather narrow range of Raman-active material platforms to include robust carbon-based films readily obtained from polymer precursors. As it uses broadly applicable and cheap polymers, it could offer great advantages in the development of practical devices for chemical/bio analysis and sensors.

Nanoscale thermal-mechanical probe determination of 'softening transitions' in thin polymer films

International Nuclear Information System (INIS)

Zhou Jing; Berry, Brian; Douglas, Jack F; Karim, Alamgir; Snyder, Chad R; Soles, Christopher

2008-01-01

We report a quantitative study of the softening behavior of glassy polystyrene (PS) films at length scales on the order of 100 nm using nano-thermomechanometry (nano-TM), an emerging scanning probe technique in which a highly doped silicon atomic force microscopy (AFM) tip is resistively heated on the surface of a polymer film. The apparent 'softening temperature' T s of the film is found to depend on the logarithm of the square root of the thermal ramping rate R. This relation allows us to estimate a quasi-equilibrium (or zero rate) softening transition temperature T s0 by extrapolation. We observe marked shifts of T s0 with decreasing film thickness, but the nature of these shifts, and even their sign, depend strongly on both the thermal and mechanical properties of the supporting substrate. Finite element simulations suggest that thin PS films on rigid substrates with large thermal conductivities lead to increasing T s0 with decreasing film thickness, whereas softer, less thermally conductive substrates promote reductions in T s0 . Experimental observations on a range of substrates confirm this behavior and indicate a complicated interplay between the thermal and mechanical properties of the thin PS film and the substrate. This study directly points to relevant factors for quantitative measurements of thermophysical properties of materials at the nanoscale using this nano-TM based method.

Solution growth of Tb doped Gd_2O_3 film

International Nuclear Information System (INIS)

Ghosh, M.; Pitale, S.; Desai, D.G.; Patra, G.D.; Sen, S.; Gadkari, S.C.

2016-01-01

Nanomaterials of Gd_2O_3 have proven applications in medical imaging and cancer therapy due to the presence of element Gd. Also Gd_2O_3 films have been grown by vapor phase method as well as self assembly in solution and studied as a high-k dielectric and efficient luminescence material. Here, we report a method to obtain Tb doped Gd_2O_3 film by solution growth method followed by suitable heat treatment. Uniform films of Tb doped Gadolinium hydroxycarbonate have been deposited on fused quartz substrates kept inside a solution containing gadolinium nitrate, terbium nitrate and Urea maintained at 90°C. Gadolinium hydroxy-carbonate films are then treated at 800°C for 2 hour to obtain Tb doped cubic Gd_2O_3 as confirmed by X-ray diffraction measurement. The photoluminescence spectra display characteristic Tb emission at 544 nm when excited at 285 nm. The lifetime of Tb emission is found to be of the order of few microseconds. (author)

Optical Properies of Polystyrene Films Doped by Methyl Green Dye

Directory of Open Access Journals (Sweden)

Asrar A. Saeed

2017-11-01

Full Text Available Effects of methyl green (MG dye on the optical properties of polystyrene (PS have been studied. Pure polystyrene and MG doped PS films were prepared by using casting method. These films were characterized using UV/VIS spectrophotometer technique in order to estimate the type of electric transition which was found to be indirect transition. The value of the optical energy gap was decreased with increasing doping ratios of methyl green dye. Absorption coefficient, extinction coefficient, refractive index and energy gap have been also investigated; it was found that all the above parameters affects by doping dye.

Electrochemical Synthesis of a Microporous Conductive Polymer Based on a Metal-Organic Framework Thin Film

KAUST Repository

Lu, Chunjing

2014-05-22

A new approach to preparing 3D microporous conductive polymer has been demonstrated in the electrochemical synthesis of a porous polyaniline network with the utilization of a MOF thin film supported on a conducting substrate. The prepared porous polyaniline with well-defined uniform micropores of 0.84 nm exhibits a high BET surface area of 986 m2 g−1 and a high electric conductivity of 0.125 S cm−1 when doped with I2, which is superior to existing porous conducting materials of porous MOFs, CMPs, and COFs.

The effect of the film thickness and doping content of SnO2:F thin films prepared by the ultrasonic spray method

International Nuclear Information System (INIS)

Rahal Achour; Benramache Said; Benhaoua Boubaker

2013-01-01

This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and HCl were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO 2 :F thin films were deposited at a 350 °C pending time (5, 15, 60 and 90 s). The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO 2 :F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 (Ω·cm) −1 for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO 2 :F thin films deposited by ultrasonic spray was reported. (semiconductor materials)

Structural and optical properties of ITO and Cu doped ITO thin films

Science.gov (United States)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

Characteristics of hydrogen co-doped ZnO : Al thin films

International Nuclear Information System (INIS)

Lee, S H; Lee, T S; Lee, K S; Cheong, B; Kim, W M; Kim, Y D

2008-01-01

ZnO films co-doped with H and Al (HAZO) were prepared by sputtering ZnO targets containing 1 wt% Al 2 O 3 on Corning glass at a substrate temperature of 150 deg. C with Ar and H 2 /Ar gas mixtures. The effects of hydrogen addition to Al-doped ZnO (AZO) films with low Al content on the electrical, the optical and the structural properties of the as-grown films as well as the vacuum- and air-annealed films were examined. Secondary ion mass spectroscopy analysis showed that the hydrogen concentration increased with increasing H 2 in sputter gas. For the as-deposited films, the free carrier number increased with increasing H 2 . The Hall mobility increased at low hydrogen content, reaching a maximum before decreasing with a further increase of H 2 content in sputter gas. Annealing at 300 deg. C resulted in the removal of hydrogen, causing a decrease in the carrier concentration. It was shown that hydrogen might exist as single isolated interstitial hydrogen bound with oxygen, thereby acting like an anionic dopant. Also, it was shown that the addition of hydrogen to ZnO films doped with low metallic dopant concentration could yield transparent conducting films with very low absorption loss as well as with proper electrical properties, which is suitable for thin film solar cell applications

Effect of Al doping on phase formation and thermal stability of iron nitride thin films

Energy Technology Data Exchange (ETDEWEB)

Tayal, Akhil [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Mukul, E-mail: mgupta@csr.res.in [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Pandey, Nidhi [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Ajay [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India); Horisberger, Michael [Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stahn, Jochen [Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

2015-11-25

In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe–N) thin films. Fe–N thin films with different concentration of Al (Al = 0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 and 100%. The structural and magnetic properties of the films were studied using x-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe–N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3 at.%, nitrogen rich non-magnetic Fe–N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe–N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2 at.% improves it marginally, whereas, for 3, 6 and 12 at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe–N and Al–N. - Highlights: • Doping effects of Al on Fe–N phase formation is studied. • Phase formation shows a non-monotonic behavior with Al doping. • Low doping levels of Al enhance and high levels retard the nitridation process. • Al doping beyond 3 at.% improve thermal stability of Fe–N films.

Electrochemical and Thermal Studies of Prepared Conducting Chitosan Biopolymer Film

International Nuclear Information System (INIS)

Hlaing Hlaing Oo; Kyaw Naing; Kyaw Myo Naing; Tin Tin Aye; Nyunt Wynn

2005-09-01

In this paper, chitosan based conducting bipolymer films were prepared by casting and solvent evaporating technique. All prepared chitosan films were of pale yellow colour, transparent, and smooth. Sulphuric acid was chosen as the cross-linking agent. It enhanced conduction pathway in cross-linked chitosan films. Mechanical properties, solid-state, and thermal behavior of prepared chitosan fimls were studied by means of a material testing machine, powder X-ray diffractometry (XRD), thermogravimetric analysis (TG-DTG), and differential scanning calorimetry (DSC). By the XRD diffraction pattern, high molecular weight of chitosan product indicates the semi-crystalline nature, but the prepared chitosan film and doped chitosan film indicate significantly lower in crystallinity prove which of the amorphous characteristics. In addition, DSC thermogram of pure chitosan film exhibited exothermic peak around at 300 C, indicating polymer decomposition of chitosan molecules in chitosan films. Furthermore, these DSC thermograms clearly showed that while pure chitosan film display exothermal decomposition, the doped chitosan films mainly endothermic characteristics. The ionic conductivity of doped chitosan films were in the order of 10 to 10 S cm , which is in the range of semi-conductor. These results showed that cross-linked chitoson films may be used as polymer electrolyte film to fabricate solid state electrochemical cells

Investigation of corrosion behavior of nitrogen doped and platinum/ruthenium doped diamond-like carbon thin films in Hank's solution

Energy Technology Data Exchange (ETDEWEB)

Khun, N.W.; Liu, E., E-mail: MEJLiu@ntu.edu.sg

2011-10-10

Undoped (DLC), nitrogen-doped (N-DLC) and platinum/ruthenium doped diamond-like carbon (PtRu-DLC) thin films were deposited on p-Si (100) substrates using a DC magnetron sputtering deposition system. The chemical composition, bonding structure, surface morphology and adhesion strength of the films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM) and micro-scratch test, respectively. The corrosion behavior of the films in a Hank's solution was investigated using potentiodynamic polarization test. The corrosion results revealed that the PtRu-DLC film had the highest corrosion potential among the films used in this study. Highlights: {yields} DLC thin films were deposited on Si substrates via dc magnetron sputtering. {yields} Some DLC films were doped with N and/or Pt/Ru. {yields} The film corrosion behavior was studied in a Hank solution with polarization test. {yields} The PtRu-DLC film showed the highest corrosion potential among the films studied.

Structures and Elastic Moduli of Polymer Nanocomposite Thin Films

Science.gov (United States)

Yuan, Hongyi; Karim, Alamgir; University of Akron Team

2014-03-01

Polymeric thin films generally possess unique mechanical and thermal properties due to confinement. In this study we investigated structures and elastic moduli of polymer nanocomposite thin films, which can potentially find wide applications in diverse areas such as in coating, permeation and separation. Conventional thermoplastics (PS, PMMA) and biopolymers (PLA, PCL) were chosen as polymer matrices. Various types of nanoparticles were used including nanoclay, fullerene and functionalized inorganic particles. Samples were prepared by solvent-mixing followed by spin-coating or flow-coating. Film structures were characterized using X-ray scattering and transmission electron microscopy. Elastic moduli were measured by strain-induced elastic buckling instability for mechanical measurements (SIEBIMM), and a strengthening effect was found in certain systems due to strong interaction between polymers and nanoparticles. The effects of polymer structure, nanoparticle addition and film thickness on elastic modulus will be discussed and compared with bulk materials.

Lattice cluster theory for dense, thin polymer films.

Science.gov (United States)

Freed, Karl F

2015-04-07

While the application of the lattice cluster theory (LCT) to study the miscibility of polymer blends has greatly expanded our understanding of the monomer scale molecular details influencing miscibility, the corresponding theory for inhomogeneous systems has not yet emerged because of considerable technical difficulties and much greater complexity. Here, we present a general formulation enabling the extension of the LCT to describe the thermodynamic properties of dense, thin polymer films using a high dimension, high temperature expansion. Whereas the leading order of the LCT for bulk polymer systems is essentially simple Flory-Huggins theory, the highly non-trivial leading order inhomogeneous LCT (ILCT) for a film with L layers already involves the numerical solution of 3(L - 1) coupled, highly nonlinear equations for the various density profiles in the film. The new theory incorporates the essential "transport" constraints of Helfand and focuses on the strict imposition of excluded volume constraints, appropriate to dense polymer systems, rather than the maintenance of chain connectivity as appropriate for lower densities and as implemented in self-consistent theories of polymer adsorption at interfaces. The ILCT is illustrated by presenting examples of the computed profiles of the density, the parallel and perpendicular bonds, and the chain ends for free standing and supported films as a function of average film density, chain length, temperature, interaction with support, and chain stiffness. The results generally agree with expected general trends.

Lattice cluster theory for dense, thin polymer films

International Nuclear Information System (INIS)

Freed, Karl F.

2015-01-01

While the application of the lattice cluster theory (LCT) to study the miscibility of polymer blends has greatly expanded our understanding of the monomer scale molecular details influencing miscibility, the corresponding theory for inhomogeneous systems has not yet emerged because of considerable technical difficulties and much greater complexity. Here, we present a general formulation enabling the extension of the LCT to describe the thermodynamic properties of dense, thin polymer films using a high dimension, high temperature expansion. Whereas the leading order of the LCT for bulk polymer systems is essentially simple Flory-Huggins theory, the highly non-trivial leading order inhomogeneous LCT (ILCT) for a film with L layers already involves the numerical solution of 3(L − 1) coupled, highly nonlinear equations for the various density profiles in the film. The new theory incorporates the essential “transport” constraints of Helfand and focuses on the strict imposition of excluded volume constraints, appropriate to dense polymer systems, rather than the maintenance of chain connectivity as appropriate for lower densities and as implemented in self-consistent theories of polymer adsorption at interfaces. The ILCT is illustrated by presenting examples of the computed profiles of the density, the parallel and perpendicular bonds, and the chain ends for free standing and supported films as a function of average film density, chain length, temperature, interaction with support, and chain stiffness. The results generally agree with expected general trends

Microstructure and high-temperature tribological properties of Si-doped hydrogenated diamond-like carbon films

Science.gov (United States)

Zhang, Teng Fei; Wan, Zhi Xin; Ding, Ji Cheng; Zhang, Shihong; Wang, Qi Min; Kim, Kwang Ho

2018-03-01

Si-doped DLC films have attracted great attention for use in tribological applications. However, their high-temperature tribological properties remain less investigated, especially in harsh oxidative working conditions. In this study, Si-doped hydrogenated DLC films with various Si content were synthesized and the effects of the addition of Si on the microstructural, mechanical and high-temperature tribological properties of the films were investigated. The results indicate that Si doping leads to an obvious increase in the sp3/sp2 ratio of DLC films, likely due to the silicon atoms preferentially substitute the sp2-hybridized carbon atoms and augment the number of sp3 sites. With Si doping, the mechanical properties, including hardness and adhesion strength, were improved, while the residual stress of the DLC films was reduced. The addition of Si leads to higher thermal and mechanical stability of DLC films because the Si atoms inhibit the graphitization of the films at an elevated temperature. Better high-temperature tribological properties of the Si-DLC films under oxidative conditions were observed, which can be attributed to the enhanced thermal stability and formation of a Si-containing lubricant layer on the surfaces of the wear tracks. The nano-wear resistance of the DLC films was also improved by Si doping.

Fabrication and Photostability of Rhodamine-6G Gold Nanoparticle Doped Polymer Optical Fiber

International Nuclear Information System (INIS)

Sebastian, Suneetha; Ajina, C; Vallabhan, C. P. G; Nampoori, V. P. N.; Radhakrishnan, P.; Kailasnath, M.

2013-01-01

We report on fabrication of a rhodamine-6G-gold-nanoparticle doped polymer optical fiber. The gold nanoparticle is synthesized directly into the monomer solution of the polymer using laser ablation synthesis in liquid. The size of the particle is found from the transmission electron microscopy. Rhodamine-6G is then mixed with the nanoparticle-monomer solution and optical characterization of the solution is investigated. It is found that there is a pronounced quenching of fluorescence of rhodamine 6G due to fluorescence resonance energy transfer. The monomer solution containing rhodamine 6G and gold nanoparticles is now made into a cylindrical rod and drawn into a polymer optical fiber. Further, the photostability is calculated with respect to the pure dye doped polymer optical fiber

Water Vapor Permeation of Metal Oxide/Polymer Coated Plastic Films

Science.gov (United States)

Numata, Yukihiro; Oya, Toshiyuki; Kuwahara, Mitsuru; Ito, Katsuya

Barrier performance to water vapor permeation of ceramic coated layers deposited on flexible polymer films is of great interest to food packaging, medical device packaging and flat panel display industries. In this study, a new type film in which a ceramic layer is deposited on a polymer coated film was proposed for lower water vapor permeation. It is important how to control interfacial properties between each layer and film for good barrier performance. Several kinds of polymer coated materials were prepared for changing surface free energy of the films before and after depositing the ceramic layer. The ceramic layer, which is composed of mixed material of SiO2 and Al2O3, was adopted under the same conditions. The following results were obtained; 1) Water vapor permeation is not related to the surface energy of polymer coated films, 2) After depositing the ceramic layer, however, a strong correlation is observed between the water vapor permeation and surface free energy. 3) The phenomenon is considered that the polarity of the polymer layers plays a key role in changing the structure of ceramic coated layers.

Synthesis and characterization of cobalt doped nickel oxide thin films by spray pyrolysis method

Science.gov (United States)

Sathisha, D.; Naik, K. Gopalakrishna

2018-05-01

Cobalt (Co) doped nickel oxide (NiO) thin films were deposited on glass substrates at a temperature of about 400 °C by spray pyrolysis method. The effect of Co doping concentration on structural, optical and compositional properties of NiO thin films was investigated. X-ray diffraction result shows that the deposited thin films are polycrystalline in nature. Surface morphologies of the deposited thin films were observed by FESEM and AFM. EDS spectra showed the incorporation of Co dopants in NiO thin films. Optical properties of the grown thin films were characterized by UV-visible spectroscopy. It was found that the optical band gap energy and transmittance of the films decrease with increasing Co doping concentration.

Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis

International Nuclear Information System (INIS)

Gokulakrishnan, V.; Parthiban, S.; Jeganathan, K.; Ramamurthi, K.

2011-01-01

Zirconium doped zinc oxide thin films with enhanced optical transparency were prepared on Corning 1737 glass substrates at the substrate temperature of 400 o C by spray pyrolysis method for various doping concentrations of zirconium (IV) chloride in the spray solution. The X-ray diffraction studies reveal that the films exhibit hexagonal crystal structure with polycrystalline grains oriented along (0 0 2) direction. The crystalline quality of the films is found to be deteriorating with the increase of doping concentration and acquires amorphous state for higher concentration of 8 at.% in precursor solution. The average transmittance for 5 at.% (solution) zirconium doped ZnO film is significantly increased to ∼92% in the visible region of 500-800 nm. The room temperature photoluminescence (PL) spectra of films show a band edge between 3.41 and 3.2 eV and strong blue emission at 2.8 eV irrespective of doping concentration and however intensity increases consistently with doping levels. The vacuum annealing at 400 o C reduced the resistivity of the films significantly due to the coalescence of grains and the lowest resistivity of 2 x 10 -3 Ω cm is observed for 3 at.% (solution) Zr doped ZnO films which envisages that it is a good candidate for stable TCO material.

Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

International Nuclear Information System (INIS)

Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

2008-01-01

Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

Science.gov (United States)

Radha, R.; Sakthivelu, A.; Pradhabhan, D.

2016-08-01

Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

Effects of Ge- and Sb-doping and annealing on the tunable bandgaps of SnS films

Energy Technology Data Exchange (ETDEWEB)

Hsu, Hsuan-Tai; Chiang, Ming-Hung; Huang, Chen-Hao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fu, Yaw-Shyan [Department of Greenergy, National University of Tainan, Tainan 700, Taiwan (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

2015-06-01

SnS, Ge- and Sb-doped SnS films with single orthorhombic SnS phase were fabricated via solvothermal routes and subsequent spin-coating, respectively. The substitution solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. The bandgaps of Ge- and Sb-doped SnS films can be tuned in the ranges of 1.25–1.35 and 1.30–1.39 eV, respectively. The possible mechanisms for the tunable bandgaps of Ge- and Sb-doped SnS films are discussed. For the Ge- and Sb-doped SnS films subjected to annealing at 200–350 °C in N{sub 2}, the bandgaps of 200 °C-annealed films remain unchanged, while those of 300 °C- and 350 °C-annealed films decrease with the annealing temperature because of the evaporation of Ge and Sb respectively. - Highlights: • Ge- and Sb-doped SnS films were fabricated via spin-coating. • The solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. • The bandgaps of SnS films can be tuned by Ge and Sb doping respectively. • Annealing above 300 °C reduces the bandgaps of Ge- and Sb-doped SnS films.

The influence of polymer architectures on the dewetting behavior of thin polymer films: from linear chains to ring chains.

Science.gov (United States)

Wang, Lina; Xu, Lin; Liu, Binyuan; Shi, Tongfei; Jiang, Shichun; An, Lijia

2017-05-03

The dewetting behavior of ring polystyrene (RPS) film and linear polystyrene (LPS) film on silanized Si substrates with different grafting densities and PDMS substrate was investigated. Results showed that polymer architectures greatly influenced the dewetting behavior of the thin polymer film. On the silanized Si substrate with 69% grafting density, RPS chains exhibited stronger adsorption compared with LPS chains, and as a result the wetting layer formed more easily. For LPS films, with a decreased annealing temperature, the stability of the polymer film changed from non-slip dewetting via apparent slip dewetting to apparently stable. However, for RPS films, the polymer film stability switched from apparent slip dewetting to apparently stable. On the silanized Si substrate with 94% grafting density, the chain adsorption became weaker and the dewetting processes were faster than that on the substrate with 69% grafting density at the same experimental temperature for both the LPS and RPS films. Moreover, on the PDMS substrate, LPS films always showed non-slip dewetting, while the dewetting kinetics of RPS films switched from non-slip dewetting to slip dewetting behaviour. Forming the wetting layer strongly influenced the stability and dewetting behavior of the thin polymer films.

Complementary p- and n-type polymer doping for ambient stable graphene inverter.

Science.gov (United States)

Yun, Je Moon; Park, Seokhan; Hwang, Young Hwan; Lee, Eui-Sup; Maiti, Uday; Moon, Hanul; Kim, Bo-Hyun; Bae, Byeong-Soo; Kim, Yong-Hyun; Kim, Sang Ouk

2014-01-28

Graphene offers great promise to complement the inherent limitations of silicon electronics. To date, considerable research efforts have been devoted to complementary p- and n-type doping of graphene as a fundamental requirement for graphene-based electronics. Unfortunately, previous efforts suffer from undesired defect formation, poor controllability of doping level, and subtle environmental sensitivity. Here we present that graphene can be complementary p- and n-doped by simple polymer coating with different dipolar characteristics. Significantly, spontaneous vertical ordering of dipolar pyridine side groups of poly(4-vinylpyridine) at graphene surface can stabilize n-type doping at room-temperature ambient condition. The dipole field also enhances and balances the charge mobility by screening the impurity charge effect from the bottom substrate. We successfully demonstrate ambient stable inverters by integrating p- and n-type graphene transistors, which demonstrated clear voltage inversion with a gain of 0.17 at a 3.3 V input voltage. This straightforward polymer doping offers diverse opportunities for graphene-based electronics, including logic circuits, particularly in mechanically flexible form.

Effects of Mn doping on the ferroelectric properties of PZT thin films

International Nuclear Information System (INIS)

Zhang Qi

2004-01-01

The effects of Mn doping on the ferroelectric properties of Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) thin films on Pt/Ti/SiO 2 /Si substrates have been investigated. The composition of the PZT and Mn doping level are Pb(Zr 0.3 Ti 0.7 ) 1-x Mn x O 3 (x = 0,0.2,0.5,1,2,4 mol%). The PZT thin films doped with a small amount of Mn 2+ (x ≤ 1) showed almost no hysteretic fatigue up to 10 10 switching bipolar pulse cycles, coupled with excellent retention properties. However, excessive additions of manganese made the fatigue behaviour worse. We propose that the addition of small amounts of Mn is able to reduce the oxygen vacancy concentration due to the combination of Mn 2+ and oxygen vacancies in PZT films, forming Mn 4+ ions. The interfacial layer between the Pt electrode and PZT films and Mn-doped PZT (x = 4) was detected by measuring the dielectric constant of thin films of different thickness. However, this interfacial layer was not detected in Mn-doped PZT (x = 1). These observations support the concept of the preferential electromigration of oxygen vacancies into sites in planes parallel to the electrodes, which is probably responsible for the hysteretic fatigue

A nonconjugated radical polymer glass with high electrical conductivity

Science.gov (United States)

Joo, Yongho; Agarkar, Varad; Sung, Seung Hyun; Savoie, Brett M.; Boudouris, Bryan W.

2018-03-01

Solid-state conducting polymers usually have highly conjugated macromolecular backbones and require intentional doping in order to achieve high electrical conductivities. Conversely, single-component, charge-neutral macromolecules could be synthetically simpler and have improved processibility and ambient stability. We show that poly(4-glycidyloxy-2,2,6,6-tetramethylpiperidine-1-oxyl), a nonconjugated radical polymer with a subambient glass transition temperature, underwent rapid solid-state charge transfer reactions and had an electrical conductivity of up to 28 siemens per meter over channel lengths up to 0.6 micrometers. The charge transport through the radical polymer film was enabled with thermal annealing at 80°C, which allowed for the formation of a percolating network of open-shell sites in electronic communication with one another. The electrical conductivity was not enhanced by intentional doping, and thin films of this material showed high optical transparency.

Junction Propagation in Organometal Halide Perovskite-Polymer Composite Thin Films.

Science.gov (United States)

Shan, Xin; Li, Junqiang; Chen, Mingming; Geske, Thomas; Bade, Sri Ganesh R; Yu, Zhibin

2017-06-01

With the emergence of organometal halide perovskite semiconductors, it has been discovered that a p-i-n junction can be formed in situ due to the migration of ionic species in the perovskite when a bias is applied. In this work, we investigated the junction formation dynamics in methylammonium lead tribromide (MAPbBr 3 )/polymer composite thin films. It was concluded that the p- and n- doped regions propagated into the intrinsic region with an increasing bias, leading to a reduced intrinsic perovskite layer thickness and the formation of an effective light-emitting junction regardless of perovskite layer thicknesses (300 nm to 30 μm). The junction propagation also played a major role in deteriorating the LED operation lifetime. Stable perovskite LEDs can be achieved by restricting the junction propagation after its formation.

Characterization of proton conducting blend polymer electrolyte using PVA-PAN doped with NH{sub 4}SCN

Energy Technology Data Exchange (ETDEWEB)

Premalatha, M. [PG & Research Department of Physics, N.M.S.S.Vellaichamy Nadar College, Madurai-625 019 (India); Materials Research Center, Coimbatore-641 045 (India); Mathavan, T., E-mail: tjmathavan@gmail.com, E-mail: kingslin.genova20@gmail.com [PG & Research Department of Physics, N.M.S.S.Vellaichamy Nadar College, Madurai-625 019 (India); Selvasekarapandian, S. [Materials Research Center, Coimbatore-641 045 (India); Genova, F. Kingslin Mary, E-mail: tjmathavan@gmail.com, E-mail: kingslin.genova20@gmail.com; Umamaheswari, R. [Department of physics, S.F.R College for Women, Sivakasi-626 128 (India)

2016-05-23

Polymer electrolytes with proton conductivity based on blend polymer using polyvinyl alcohol (PVA) and poly acrylo nitrile (PAN) doped with ammonium thiocyanate have been prepared by solution casting method using DMF as solvent. The complex formation between the blend polymer and the salt has been confirmed by FTIR Spectroscopy. The amorphous nature of the blend polymer electrolytes have been confirmed by XRD analysis. The highest conductivity at 303 K has been found to be 3.25 × 10{sup −3} S cm{sup −1} for 20 mol % NH{sub 4}SCN doped 92.5PVA:7.5PAN system. The increase in conductivity of the doped blend polymer electrolytes with increasing temperature suggests the Arrhenius type thermally activated process. The activation energy is found to be low (0.066 eV) for the highest conductivity sample.

Formulation and Characterization of Cu Doped ZnO Thick Films as LPG Gas Sensor

Directory of Open Access Journals (Sweden)

A. V. PATIL

2010-12-01

Full Text Available Thick films of pure and various concentrations (1 wt. %, 3 wt. %, 5 wt. %, 7 wt. % and 10 wt. % of Cu-doped ZnO were prepared on alumina substrates using a screen printing technique. These films were fired at a temperature of 700ºC for two hours in an air atmosphere. Morphological, compositional and structural properties of the samples were obtained using the scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDAX and X-ray diffraction techniques respectively. The LPG gas sensing properties of these thick films were investigated at different operating temperatures and LPG gas concentrations. The surface resistance of thick films decreases when exposed to LPG gas. The Cu doped films show significant sensitivity to LPG gas than pure ZnO film. 5 wt. % Cu-doped ZnO film was found to be more sensitive (87.3 % to LPG gas exposed at 300 oC than other doping concentrations with fast response and recovery time.

Morphological differences in transparent conductive indium-doped zinc oxide thin films deposited by ultrasonic spray pyrolysis

International Nuclear Information System (INIS)

Jongthammanurak, Samerkhae; Cheawkul, Tinnaphob; Witana, Maetapa

2014-01-01

In-doped ZnO thin films were deposited on glass substrates by an ultrasonic spray pyrolysis technique, using indium chloride (InCl 3 ) as a dopant and zinc acetate solution as a precursor. Increasing the [at.% In]/[at.% Zn] ratio changed the crystal orientations of thin films, from the (100) preferred orientation in the undoped, to the (101) and (001) preferred orientations in the In-doped ZnO thin films with 4 at.% and 6–8 at.%, respectively. Undoped ZnO thin film shows relatively smooth surface whereas In-doped ZnO thin films with 4 at.% and 6–8 at.% show surface features of pyramidal forms and hexagonal columns, respectively. X-ray diffraction patterns of the In-doped ZnO thin films with [at.% In]/[at.% Zn] ratios of 6–8% presented an additional peak located at 2-theta of 32.95°, which possibly suggested that a metastable Zn 7 In 2 O 10 phase was present with the ZnO phase. ZnO thin films doped with 2 at.% In resulted in a sheet resistance of ∼ 645 Ω/sq, the lowest value among thin films with [at.% In]/[at.% Zn] ratio in a range of 0–8%. The precursor molarity was changed between 0.05 M and 0.20 M at an [at.% In]/[at.% Zn] ratio of 2%. Increasing the precursor molarity in a range of 0.10 M–0.20 M resulted in In-doped ZnO thin films with the (100) preferred orientation. An In-doped ZnO thin film deposited by 0.20 M precursor showed a sheet resistance of 25 Ω/sq, and an optical transmission of 75% at 550 nm wavelength. The optical band gap estimated from the transmission result was 3.292 eV. - Highlights: • Indium-doped ZnO thin films were grown on glass using ultrasonic spray pyrolysis. • Thin films' orientations depend on In doping and Zn molarity of precursor solution. • Highly c-axis or a-axis orientations were found in the In-doped ZnO thin films. • In doping of 6–8 at.% may have resulted in ZnO and a metastable Zn 7 In 2 O 10 phases. • Increasing precursor molarity reduced sheet resistance of In-doped ZnO thin films

Exploration of Al-Doped ZnO in Photovoltaic Thin Films

Science.gov (United States)

Ciccarino, Christopher; Sahiner, M. Alper

The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.

Optoelectronic properties of doped hydrothermal ZnO thin films

KAUST Repository

Mughal, Asad J.; Carberry, Benjamin; Oh, Sang Ho; Myzaferi, Anisa; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2017-01-01

, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates

Characteristics of strontium-doped ZnO films on love wave filter applications

International Nuclear Information System (INIS)

Water, Walter; Yan, Y.-S.

2007-01-01

The effect of dopant concentrations in strontium-doped ZnO films on Love wave filter characteristics was investigated. Strontium-doped ZnO films with a c-axis preferred orientation were grown on ST-cut quartz by radio frequency magnetron sputtering. The crystalline structures and surface morphology of films were studied by X-ray diffraction, scanning electron microscopy and atomic force microscopy. The electromechanical coupling coefficient, dielectric constant, and temperature coefficient of frequency of filters were then determined using a network analyzer. A uniform crystalline structure and smooth surface of the ZnO films were obtained at the 1-2 mol% strontium dopant level. The electromechanical coupling coefficient of the 1 mol% strontium-doped ZnO film reaches a maximum of 0.61%, and the temperature coefficient of frequency declines to + 12.87 ppm/deg. C at a 1.5 mol% strontium dopant level

Ag- and Cu-doped multifunctional bioactive nanostructured TiCaPCON films

Energy Technology Data Exchange (ETDEWEB)

Shtansky, D.V., E-mail: shtansky@shs.misis.ru [National University of Science and Technology “MISIS”, Leninsky prospekt 4, Moscow 119049 (Russian Federation); Batenina, I.V.; Kiryukhantsev-Korneev, Ph.V.; Sheveyko, A.N.; Kuptsov, K.A. [National University of Science and Technology “MISIS”, Leninsky prospekt 4, Moscow 119049 (Russian Federation); Zhitnyak, I.Y.; Anisimova, N.Yu.; Gloushankova, N.A. [N.N. Blokhin Russian Cancer Research Center of RAMS, Kashirskoe shosse 24, Moscow 115478 (Russian Federation)

2013-11-15

A key property of multicomponent bioactive nanostructured Ti(C,N)-based films doped with Ca, P, and O (TiCaPCON) that can be improved further is their antibacterial effect that should be achieved without compromising the implant bioactivity and biocompatibility. The present work is focused on the study of structure, chemical, mechanical, tribological, and biological properties of Ag- and Cu-doped TiCaPCON films. The films with Ag (0.4–4 at.%) and Cu (13 at.%) contents were obtained by simultaneous sputtering of a TiC{sub 0.5}–Ca{sub 3}(PO{sub 4}){sub 2} target and either an Ag or a Cu target. The film structure was studied using X-ray diffraction, transmission and scanning electron microscopy, energy dispersive X-ray spectroscopy, glow discharge optical emission spectroscopy, and Raman-shift and IR spectroscopy. The films were characterized in terms of their hardness, elastic modulus, dynamic impact resistance, friction coefficient and wear rate (both in air and normal saline), surface wettability, electrochemical behavior and Ag or Cu ion release in normal saline. Particular attention was paid to the influence of inorganic bactericides (Ag and Cu ions) on the bactericidal activity against unicellular yeast fungus Saccharomyces cerevisiae and gram-positive bacteria Lactobacillus acidophilus, as well as on the attachment, spreading, actin cytoskeleton organization, focal adhesions, and early stages of osteoblastic cell differentiation. The obtained results show that the Ag-doped films are more suitable for the protection of metallic surfaces against bacterial infection compared with their Cu-doped counterpart. In particular, an excellent combination of mechanical, tribological, and biological properties makes Ag-doped TiCaPCON film with 1.2 at.% of Ag very attractive material for bioengineering and modification of load-bearing metal implant surfaces.

Relation between film thickness and surface doping of MoS2 based field effect transistors

Science.gov (United States)

Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

2018-05-01

Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

RBS and XRD analysis of silicon doped titanium diboride films

International Nuclear Information System (INIS)

Mollica, S.; Sood, D.K.; Ghantasala, M.K.; Kothari, R.

1999-01-01

Titanium diboride is a newly developed material suitable for protective coatings. Its high temperature oxidation resistance at temperatures of 700 deg C and beyond is limited due to its poor oxidative behaviour. This paper presents a novel approach to improving the coatings' oxidative characteristics at temperatures of 700 deg C by doping with silicon. Titanium diboride films were deposited onto Si(100) wafer substrates using a DC magnetron sputtering system. Films were deposited in two different compositions, one at pure TiB 2 and the other with 20 % Si doping. These samples were vacuum annealed at 700 deg C at 1x10 -6 Torr to investigate the anaerobic behaviour of the material at elevated temperatures and to ensure that they were crystalline. Samples were then oxidised in air at 700 deg C to investigate their oxidation resistance. Annealing the films at 700 deg C in air results in the oxidation of the film as titanium and boron form TiO 2 and B 2 O 3 . Annealing is seen to produce only minor changes in the films. There is some silicon diffusion from the substrate at elevated temperatures, which is related to the porous nature of the deposited film and the high temperature heat treatments. However, silicon doped films showed relatively less oxidation characteristics after annealing in air compared with the pure TiB 2 samples

Motion of Adsorbed Nano-Particles on Azobenzene Containing Polymer Films

Directory of Open Access Journals (Sweden)

Sarah Loebner

2016-12-01

Full Text Available We demonstrate in situ recorded motion of nano-objects adsorbed on a photosensitive polymer film. The motion is induced by a mass transport of the underlying photoresponsive polymer material occurring during irradiation with interference pattern. The polymer film contains azobenzene molecules that undergo reversible photoisomerization reaction from trans- to cis-conformation. Through a multi-scale chain of physico-chemical processes, this finally results in the macro-deformations of the film due to the changing elastic properties of polymer. The topographical deformation of the polymer surface is sensitive to a local distribution of the electrical field vector that allows for the generation of dynamic changes in the surface topography during irradiation with different light interference patterns. Polymer film deformation together with the motion of the adsorbed nano-particles are recorded using a homemade set-up combining an optical part for the generation of interference patterns and an atomic force microscope for acquiring the surface deformation. The particles undergo either translational or rotational motion. The direction of particle motion is towards the topography minima and opposite to the mass transport within the polymer film. The ability to relocate particles by photo-induced dynamic topography fluctuation offers a way for a non-contact simultaneous manipulation of a large number of adsorbed particles just in air at ambient conditions.

Methyllithium-Doped Naphthyl-Containing Conjugated Microporous Polymer with Enhanced Hydrogen Storage Performance.

Science.gov (United States)

Xu, Dan; Sun, Lei; Li, Gang; Shang, Jin; Yang, Rui-Xia; Deng, Wei-Qiao

2016-06-01

Hydrogen storage is a primary challenge for using hydrogen as a fuel. With ideal hydrogen storage kinetics, the weak binding strength of hydrogen to sorbents is the key barrier to obtain decent hydrogen storage performance. Here, we reported the rational synthesis of a methyllithium-doped naphthyl-containing conjugated microporous polymer with exceptional binding strength of hydrogen to the polymer guided by theoretical simulations. Meanwhile, the experimental results showed that isosteric heat can reach up to 8.4 kJ mol(-1) and the methyllithium-doped naphthyl-containing conjugated microporous polymer exhibited an enhanced hydrogen storage performance with 150 % enhancement compared with its counterpart naphthyl-containing conjugated microporous polymer. These results indicate that this strategy provides a direction for design and synthesis of new materials that meet the US Department of Energy (DOE) hydrogen storage target. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Lithium secondary batteries: Role of polymer cathode morphology

Science.gov (United States)

Naoi, Katsuhiko; Osaka, Tetsuya; Owens, Boone B.

1988-06-01

Electrically conducting polymers have been utilized both as the cathode and as the electrolyte element of Li secondary cells. Polymer cathodes were limited in their suitability for batteries because of the low energy content associated with low levels of doping and the inclusion of complex ionic species in the cathode. Recent studies have indicated that doping levels up to 100 percent can be achieved in polyanilene. High doping levels in combination with controlled morphologies have been found to improve the energy and rate capabilities of polymer cathodes. A morphology-modifying technique was utilized to enhance the charge/discharge characteristics of Li/liquid electrolyte polypyrrole cells. The polymer is electropolymerized in a preferred orientation morphology when the substrate is first precoated with an insulating film of nitrile butadiene rubber (NBR). Modification of the kinetic behavior of the electrode results from variations in the chemical composition of the NBR.

Influence of Al doping on structural and optical properties of Mg–Al co-doped ZnO thin films prepared by sol–gel method

International Nuclear Information System (INIS)

Fang, Dongyu; Lin, Kui; Xue, Tao; Cui, Can; Chen, Xiaoping; Yao, Pei; Li, Huijun

2014-01-01

Highlights: • Mg–Al co-doped ZnO thin films were prepared by sol–gel spin coating method. • The effects of Al doping on structural and optical properties of AMZO thin films were investigated. • The EDS spectra confirmed presence of Mg and Al elements in AMZO thin films. • The optical band gap of AMZO thin films increased with Al doping concentration increased. • The origin of the photoluminescence emissions was discussed. -- Abstract: Mg–Al co-doped ZnO (AMZO) thin films were successfully deposited onto quartz glass substrates by sol–gel spin coating method. The structure, surface morphology, composition, optical transmittance, and photoluminescence properties of AMZO thin films were characterized through X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy, UV–VIS–NIR spectrophotometry, and fluorescence spectrophotometry. The results indicated that AMZO thin films exhibited preferred orientation growth along the c-axis, and the full width at half maximum of the (0 0 2) diffraction peak decreased first and subsequently increased, reaching a minimum of approximately 0.275° at 3% Al content. The calculated crystallite size increased from 30.21 nm to 40.73 nm. Al doping content increased from 1% to 3% and subsequently reached 19.33 nm for Al doping content at 5%. The change in lattice parameters was demonstrated by the c/a ratio, residual stress, bond length, and volume per unit cell. EDS analysis confirmed the presence of Mg and Al elements in ZnO thin films. The atomic percentage of Mg and Al elements was nearly equal to their nominal stoichiometry within the experimental error. In addition, the optical transmittance of AMZO thin films was over 85% in the visible region, and the optical band gap increased with increasing Al doping concentration. Room temperature photoluminescence showed ultraviolet emission peak and defect emission peak. The defect emission peak of

A comparative study on the flux pinning properties of Zr-doped YBCO film with those of Sn-doped one prepared by metal-organic deposition

International Nuclear Information System (INIS)

Choi, S. M.; Shin, G. M.; Joo, Y.S.; Yoo, S. I.

2013-01-01

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped YBa 2 Cu 3 O 7-δ (YBCO) films with the same thickness of ∽350 nm for a comparative purpose. The films were prepared on the SrTiO 3 (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density (J c ) and pinning force density (F p ). The anisotropic J c ,min/J c ,max ratio in the field-angle dependence of J c at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic J c values of 9.0 and 2.9 MA/cm 2 with the maximum F p (F p ,max) values of 19 and 5 GN/m 3 at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller BaZrO-3 (BZO) nanoparticles (the average size ≈ 28.4 nm) than YBa 2 SnO 5. 5 (YBSO) nanoparticles (the average size ≈ 45.0 nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

Structural Transformation upon Nitrogen Doping of Ultrananocrystalline Diamond Films by Microwave Plasma CVD

Directory of Open Access Journals (Sweden)

Chien-Chung Teng

2009-01-01

Full Text Available The molecular properties and surface morphology of undoped and N-doped ultra-nanocrystalline diamond (UNCD films deposited by microwave plasma CVD with addition of nitrogen are investigated with various spectroscopic techniques. The results of spatially resolved Raman scattering, ATR/FT-IR and XPS spectra show more amorphous and sp2/sp3 ratio characteristics in N-doped UNCD films. The surface morphology in AFM scans shows larger nanocrystalline diamond clusters in N-doped UNCD films. Incorporation of nitrogen into UNCD films has promoted an increase of amorphous sp2-bonded carbons in the grain boundaries and the size of nanocrystalline diamond grains that are well correlated to the reported enhancement of conductivity and structural changes of UNCD films.

π-Donors microstructuring on surface of polymer film by their noncovalent interactions with iodine

Energy Technology Data Exchange (ETDEWEB)

Traven, Valerii F., E-mail: valerii.traven@gmail.com [Mendeleev University of Chemical Technology, Moscow 125047, Miusskaya sq., 9 (Russian Federation); Ivanov, Ivan V.; Dolotov, Sergei M. [Mendeleev University of Chemical Technology, Moscow 125047, Miusskaya sq., 9 (Russian Federation); Veciana, Jaume Miro; Lebedev, Victor S. [Institut de Ciencia de Materials de Barcelona–CSIC, Campus de la UAB, 08193, Bellaterra (Spain); Shulga, Yurii M.; Khasanov, Salavat S. [Institute of Problems of Chemical Physics, Russian Academy of Sciences, Acad. N.N. Semenov Prosp., 1, Chernogolovka, 142432 (Russian Federation); Medvedev, Michael G. [A. N. Nesmeyanov Institute of Organoelement Compounds, Russian Academy of Sciences, Moscow 119991, Vavilova str., 28 (Russian Federation); Laukhina, Elena E. [The Biomedical Research Networking Center in Bioengineering, Biomaterials and Nanomedicine, ICMAB-CSIC, Bellaterra, 08193 (Spain)

2015-06-15

Noncovalent (charge transfer) interaction between perylene and iodine in polycarbonate film provides formation of microstructured perylene layer on the polymer surface upon exposure of polymer film which contains dissolved perylene to solvent + iodine vapors. The prepared bilayer film possesses a sensing effect to iodine vapors which can be observed by both fluorescence and electrical conductivity changes. Similar bilayer films have been prepared also with anthracene and phenothiazine as π-donors with use of different polymer matrixes. Interaction of iodine with polycyclic aromatic hydrocarbons (PAH) has also been studied by the M06-2x DFT calculations for better understanding of phenomenon of π-donors microstructuring on surface of polymer film. - Highlights: • Preparation of bilayer polymer films with π-donors on surface for the first time. • π-Donor phase purity is confirmed by XRD, IR spectroscopy, SEM. • Perylene bilayer polymer films possess fluorescence. • Perylene bilayer polymer films loss fluorescence under iodine vapors. • Perylene bilayer polymer films possess electrical conductivity when treated by iodine vapors.

Boron doped nanostructure ZnO films deposited by ultrasonic spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Karakaya, Seniye, E-mail: seniyek@ogu.edu.tr; Ozbas, Omer

2015-02-15

Highlights: • Nanostructure undoped and boron doped ZnO films were deposited by USP technique. • Influences of doping on the surface and optical properties of the ZnO films were investigated. • XRD spectra of the films exhibited a variation in crystalline quality depending on the B content. - Abstract: ZnO is an II–VI compound semiconductor with a wide direct band gap of 3.3 eV at room temperature. Doped with group III elements (B, Al or Ga), it becomes an attractive candidate to replace tin oxide (SnO{sub 2}) or indium tin oxide (ITO) as transparent conducting electrodes in solar cell devices and flat panel display due to competitive electrical and optical properties. In this work, ZnO and boron doped ZnO (ZnO:B) films have been deposited onto glass substrates at 350 ± 5 °C by a cost-efficient ultrasonic spray pyrolysis technique. The optical, structural, morphological and electrical properties of nanostructure undoped and ZnO:B films have been investigated. Electrical resistivity of films has been analyzed by four-probe technique. Optical properties and thicknesses of the films have been examined in the wavelength range 1200–1600 nm by using spectroscopic ellipsometry (SE) measurements. The optical constants (refractive index (n) and extinction coefficient (k)) and the thicknesses of the films have been fitted according to Cauchy model. The optical method has been used to determine the band gap value of the films. Transmission spectra have been taken by UV spectrophotometer. It is found that both ZnO and ZnO:B films have high average optical transmission (≥80%). X-ray diffraction (XRD) patterns indicate that the obtained ZnO has a hexagonal wurtzite type structure. The morphological properties of the films were studied by atomic force microscopy (AFM). The surface morphology of the nanostructure films is found to depend on the concentration of B. As a result, ZnO:B films are promising contender for their potential use as transparent window layer and

Polypyrrole Doped with Alkyl Benzene Sulphonates

DEFF Research Database (Denmark)

Bay, Lasse; Mogensen, Naja; Skaarup, Steen

2002-01-01

The properties of polypyrrole (PPy) are to a large extent determined by the condition of synthesis and especially by the counterion incorporated as dopant during synthesis. In this work, PPy doped with different alkyl benzenesulfonates are compared. The polymer films are prepared by constant curr...

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

Science.gov (United States)

Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

2015-09-21

: In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

International Nuclear Information System (INIS)

Turgut, Güven; Koçyiğit, Adem; Sönmez, Erdal

2015-01-01

The Pr and Ta separately doped FTO (10 at.% F incorporated SnO 2 ) films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO (FTO) films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction (XRD) measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has (200) preferential orientation, but this orientation changes to (211) direction with Pr and Ta doping ratio increasing. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible (UV-Vis) spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications. (paper)

Poly-β-hydroxybutyrate sensitizing effect on the photophysical properties of environment friendly fluorescent films containing europium complex

Energy Technology Data Exchange (ETDEWEB)

Yang, Chaolong, E-mail: yclzjun@163.com [School of Materials Science and Engineering, Chongqing University of Technology, Chongqing 400054 (China); Zhang, Pan; Zhou, Hualin [School of Materials Science and Engineering, Chongqing University of Technology, Chongqing 400054 (China); Xu, Jing [Department of Chemistry, Graduate School of Science, Tohoku University, Aramaki-Azaaoba 6-3, Aoba-ku, Sendai (Japan); Li, Youbing [School of Materials Science and Engineering, Chongqing University of Technology, Chongqing 400054 (China); Lu, Mangeng [Key Laboratory of Polymer Materials for Electronics, Guangzhou Institute of Chemistry, Chinese Academy of Sciences, Guangzhou 510650 (China); Lei, Lei; Zhang, Qiang; Zhang, Yi; Chen, Shaopeng [School of Materials Science and Engineering, Chongqing University of Technology, Chongqing 400054 (China)

2016-10-15

A series of environment friendly Eu/PHB fluorescent films through doped the Eu-complex precursor Eu(TTA){sub 2}(Tpy-OCH{sub 3})(2H{sub 2}O) into polymer matrices poly-β-hydroxybutyrate (PHB) with doping percentage at 1, 3, 5, and 7 (mass) were designed, fabricated and characterized. TGA and PL results indicated the Eu-complex precursor was immobilized in PHB matrix through the interaction between the Eu-complex. DSC results indicated the crystallinity of Eu/PHB films decreased with the increase of Eu-complex doping percentage. The emission spectra of the Eu-complex and Eu/PHB films recorded at room temperature exhibited the characteristic bands arising from the {sup 5}D{sub 0}/{sup 7}F{sub J}. The fact that the quantum efficiencies (η) of the doped film increased significantly revealed that the PHB matrix acts as an efficient co-sensitizer for Eu{sup 3+} ions luminescent center and therefore enhances the quantum efficiency of the emitter {sup 5}D{sub 0} level. In particular, all Eu/PHB films can be excited by visible light (410 nm), and also showed good photoluminescent properties. So the new Eu/PHB fluorescent films showed considerable promise for polymer light-emitting diode, active polymer optical fiber and biomedical analysis applications.

Poly-β-hydroxybutyrate sensitizing effect on the photophysical properties of environment friendly fluorescent films containing europium complex

International Nuclear Information System (INIS)

Yang, Chaolong; Zhang, Pan; Zhou, Hualin; Xu, Jing; Li, Youbing; Lu, Mangeng; Lei, Lei; Zhang, Qiang; Zhang, Yi; Chen, Shaopeng

2016-01-01

A series of environment friendly Eu/PHB fluorescent films through doped the Eu-complex precursor Eu(TTA) 2 (Tpy-OCH 3 )(2H 2 O) into polymer matrices poly-β-hydroxybutyrate (PHB) with doping percentage at 1, 3, 5, and 7 (mass) were designed, fabricated and characterized. TGA and PL results indicated the Eu-complex precursor was immobilized in PHB matrix through the interaction between the Eu-complex. DSC results indicated the crystallinity of Eu/PHB films decreased with the increase of Eu-complex doping percentage. The emission spectra of the Eu-complex and Eu/PHB films recorded at room temperature exhibited the characteristic bands arising from the 5 D 0 / 7 F J . The fact that the quantum efficiencies (η) of the doped film increased significantly revealed that the PHB matrix acts as an efficient co-sensitizer for Eu 3+ ions luminescent center and therefore enhances the quantum efficiency of the emitter 5 D 0 level. In particular, all Eu/PHB films can be excited by visible light (410 nm), and also showed good photoluminescent properties. So the new Eu/PHB fluorescent films showed considerable promise for polymer light-emitting diode, active polymer optical fiber and biomedical analysis applications.

Singlet Exciton Lifetimes in Conjugated Polymer Films for Organic Solar Cells

KAUST Repository

Dimitrov, Stoichko

2016-01-13

The lifetime of singlet excitons in conjugated polymer films is a key factor taken into account during organic solar cell device optimization. It determines the singlet exciton diffusion lengths in polymer films and has a direct impact on the photocurrent generation by organic solar cell devices. However, very little is known about the material properties controlling the lifetimes of singlet excitons, with most of our knowledge originating from studies of small organic molecules. Herein, we provide a brief summary of the nature of the excited states in conjugated polymer films and then present an analysis of the singlet exciton lifetimes of 16 semiconducting polymers. The exciton lifetimes of seven of the studied polymers were measured using ultrafast transient absorption spectroscopy and compared to the lifetimes of seven of the most common photoactive polymers found in the literature. A plot of the logarithm of the rate of exciton decay vs. the polymer optical bandgap reveals a medium correlation between lifetime and bandgap, thus suggesting that the Energy Gap Law may be valid for these systems. This therefore suggests that small bandgap polymers can suffer from short exciton lifetimes, which may limit their performance in organic solar cell devices. In addition, the impact of film crystallinity on the exciton lifetime was assessed for a small bandgap diketopyrrolopyrrole co-polymer. It is observed that the increase of polymer film crystallinity leads to reduction in exciton lifetime and optical bandgap again in agreement with the Energy Gap Law.

Confinement Effects on Host Chain Dynamics in Polymer Nanocomposite Thin Films

Energy Technology Data Exchange (ETDEWEB)

Johnson, Kyle J. [Department; Glynos, Emmanouil [Department; Maroulas, Serafeim-Dionysios [Department; Narayanan, Suresh [Advanced; Sakellariou, Georgios [Department; Green, Peter F. [Department; National

2017-09-07

Incorporating nanoparticles (NPs) within a polymer host to create polymer nanocomposites (PNCs) while having the effect of increasing the functionality (e.g., sensing, energy conversion) of these materials influences other properties. One challenge is to understand the effects of nanoparticles on the viscosity of nanoscale thick polymer films. A new mechanism that contributes to an enhancement of the viscosity of nanoscale thick polymer/nanoparticle films is identified. We show that while the viscosities of neat homopolymer poly(2-vinylpyridine) (P2VP) films as thin as 50 nm remained the same as the bulk, polymer/nanoparticle films containing P2VP brush-coated gold NPs, spaced 50 nm apart, exhibited unprecedented increases in viscosities of over an order of magnitude. For thicker films or more widely separated NPs, the chain dynamics and viscosities were comparable to the bulk values. These results - NP proximities and suppression of their dynamics - suggest a new mechanism by which the viscosities of polymeric liquids could be controlled for nanoscale applications.

Mn doping effect on structure and magnetism of epitaxial (FePt)1-xMnx films

International Nuclear Information System (INIS)

Huang, J.C.A.; Chang, Y.C.; Yu, C.C.; Yao, Y.D.; Hu, Y.M.; Fu, C.M.

2003-01-01

We study the structure and perpendicular magnetism of molecular beam epitaxy grown (FePt) 1-x Mn x films with doping concentration x=0, 1%, 2%, 3%, 4%, and 5%. The (FePt) 1-x Mn x films were made by multilayers growth of [Fe/Pt/Mn]xN at 100 deg. C and annealed at 600 deg. C. X-ray diffraction scans indicate that relatively better L1 0 ordered structure for low Mn doping (x 3%. The perpendicular magnetic anisotropy effect of the (FePt) 1-x Mn x films tends to decrease with the increase of Mn doping for x>1%. However, the x=1% doped films possess slightly better perpendicular magnetic anisotropy effect than the zero doped film. The perpendicular magnetic anisotropy constant are of about 1.3x10 7 and 1.6x10 7 erg/cm 3 for x=0% and x=1%, respectively

Improving the conductance of ZnO thin film doping with Ti by using a cathodic vacuum arc deposition process

International Nuclear Information System (INIS)

Wu, Chun-Sen; Lin, Bor-Tsuen; Jean, Ming-Der

2011-01-01

The Ti-doped ZnO films compared to un-doped ZnO films were deposited onto Corning XG glass substrates by using a cathodic vacuum arc deposition process in a mixture of oxygen and argon gases. The structural, electrical and optical properties of un-doped and Ti-doped ZnO films have been investigated. When the Ti target power is about 750 W, the incorporation of titanium atoms into zinc oxide films is obviously effective. Additionally, the resistivity of un-doped ZnO films is high and reduces to a value of 3.48 x 10 -3 Ω-cm when Ti is incorporated. The Ti doped in the ZnO films gave rise to the improvement of the conductivity of the films obviously. The Ti-doped ZnO films have > 85% transmittance in a range of 400-700 nm.

Stoichiometric transfer of material in the infrared pulsed laser deposition of yttrium doped Bi-2212 films

International Nuclear Information System (INIS)

De Vero, Jeffrey C.; Blanca, Glaiza Rose S.; Vitug, Jaziel R.; Garcia, Wilson O.; Sarmago, Roland V.

2011-01-01

Highlights: → This work describes the stoichiometric transfer of Y-doped Bi-2212 during IR-PLD. → As-deposited films show spheroidal morphology with similar composition as the target. Relatively flat and highly c-axis oriented films were obtained after heat treatment. → IR-PLD can be a viable technique in growing other high Tc superconducting materials. - Abstract: Films of Y-doped Bi-2212 were successfully grown on MgO (1 0 0) substrates by infrared pulsed laser deposition (IR-PLD). With post-heat treatments, smooth and highly c-axis oriented films were obtained. The average compositions of the films have the same stoichiometry as the target. Y content is also preserved on the grown films at all doping levels. The electrical properties of the grown Y-doped Bi-2212 films exhibit the expected electrical properties of the bulk Y-doped Bi-2212. This is attributed to the stoichiometric transfer of material by IR-PLD.

Zirconium doped TiO{sub 2} thin films deposited by chemical spray pyrolysis

Energy Technology Data Exchange (ETDEWEB)

Juma, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Department of Physics and Astronomy, Botswana International University of Science and Technology, Private bag 16, Palapye (Botswana); Oja Acik, I., E-mail: ilona.oja@ttu.ee [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Oluwabi, A.T.; Mere, A. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Mikli, V.; Danilson, M. [Chair of Semiconductor Materials Technology, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krunks, M. [Laboratory of Thin Film Chemical Technologies, Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia)

2016-11-30

Highlights: • Mean crystallite size of TiO{sub 2}:Zr film decreases with increasing [Zr] in the solution. • Zr doping supresses the anatase to rutile transformation process in TiO{sub 2} films. • Band gap of TiO{sub 2}:Zr film is 3.4 eV irrespective of the annealing temperature. - Abstract: Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO{sub 2} thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO{sub 2} thin films were uniform and homogeneous showing much smaller grains than the undoped TiO{sub 2} films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO{sub 2} film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO{sub 4} phase started forming after annealing at 800 °C. The optical band gap for TiO{sub 2} decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO{sub 2}:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

γ-irradiation effect on gas diffusion in polymer films. Part I : Hydrogen diffusion through mylar film

International Nuclear Information System (INIS)

Rao, K.A.; Pushpa, K.K.; Iyer, R.M.

1980-01-01

γ-irradiation of polymers results in further crosslinking in the polymer or breakdown of the polymer or a combination of both these phenomena depending on the type of polymer, the dose as well as the environment in which irradiation is carried out. The gas diffusion through polymer films is expected to vary depending on these changes. With a view to A evaluate the feasibility of effecting selective diffusion of specific gases and also to correlate the change in diffusion rates with the polymer characteristics these studies have been initiated. Hydrogen diffusion through mylar film γ-irradiated under varying conditions upto a dose of approximately 50 Mrads is reported in this paper. The results indicate negligible change in hydrogen diffusion rates on γ-irradiation. However, γ-irradiation induced crosslinking of acrylic acid on Mylar reduced the hydrogen diffusion rate. The hydrogen diffusion studies may also be useful in finding the glass transition temperature of polymer films as is apparent from the gas diffusion curves. (author)

Design and characterization of Ga-doped indium tin oxide films for pixel electrode in liquid crystal display

International Nuclear Information System (INIS)

Choi, J.H.; Kang, S.H.; Oh, H.S.; Yu, T.H.; Sohn, I.S.

2013-01-01

Indium tin oxide (ITO) thin films doped with various metal atoms were investigated in terms of phase transition behavior and electro-optical properties for the purpose of upgrading ITO and indium zinc oxide (IZO) films, commonly used for pixel electrodes in flat panel displays. We explored Ce, Mg, Zn, and Ga atoms as dopants to ITO by the co-sputtering technique, and Ga-doped ITO films (In:Sn:Ga = 87.4:6.7:5.9 at.%) showed the phase transition behavior at 210 °C within 20 min with high visible transmittance of 91% and low resistivity of 0.22 mΩ cm. The film also showed etching rate similar to amorphous ITO, and no etching residue on glass surfaces. These results were confirmed with the film formed from a single Ga-doped ITO target with slightly different compositions (In:Sn:Ga = 87:9:4 at.%). Compared to the ITO target, Ga-doped ITO target left 1/4 less nodules on the target surface after sputtering. These results suggest that Ga-doped ITO films could be an excellent alternative to ITO and IZO for pixel electrodes in thin film transistor liquid crystal display (TFT-LCD). - Highlights: ► We report Ga-doped In–Sn–O films for a pixel electrode in liquid crystal display. ► Ga-doped In–Sn–O films show phase transition behavior at 210 °C. ► Ga-doped In–Sn–O films show high wet etchability and low resistivity

Optimization of the Laser Properties of Polymer Films Doped with N,N´-Bis(3-methylphenyl-N,N´-diphenylbenzidine

Directory of Open Access Journals (Sweden)

María A. Díaz-García

2009-09-01

Full Text Available This review compiles the work performed in the field of organic solid-state lasers with the hole-transporting organic molecule N,N´-bis(3-methylphenyl-N,N´-diphenylbenzidine system (TPD, in view of improving active laser material properties. The optimization of the amplified spontaneous emission characteristics, i.e., threshold, linewidth, emission wavelength and photostability, of polystyrene films doped with TPD in waveguide configuration has been achieved by investigating the influence of several materials parameters such as film thickness and TPD concentration. In addition, the influence in the emission properties of the inclusion of a second-order distributed feedback grating in the substrate is discussed.

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

Directory of Open Access Journals (Sweden)

Nen-Wen Pu

2015-09-01

Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

Science.gov (United States)

Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

2016-02-01

Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

Elevated transition temperature in Ge doped VO2 thin films

Science.gov (United States)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Flux pinning characteristics of Sn-doped YBCO film by the MOD process

International Nuclear Information System (INIS)

Choi, S.M.; Shin, G.M.; Yoo, S.I.

2013-01-01

Highlights: ► The pinning effects of undoped and Sn-doped YBCO films by MOD were characterized. ► Sn-containing nanoparticles were trapped in Sn-doped YBCO films by MOD. ► Sn-containing nanoparticles were identified as the YBa 2 SnO 5.5 (YBSO) phase by TEM. ► The YBSO nanoparticles are responsible for improved flux pinning effect. ► We report the orientation relationship between YBSO nanoparticles and YBCO matrix. -- Abstract: Compared with the undoped YBa 2 Cu 3 O 7−δ (YBCO) film, 10 mol% Sn-doped YBCO film exhibited significantly enhanced critical current densities (J c ) in magnetic fields up to 5 T at 65 and 77 K for H//c, indicating that the Sn-doped YBCO film possesses more effective flux pinning centers. Both samples were grown on the SrTiO 3 (STO) (1 0 0) single crystal substrates by the metal-organic deposition (MOD) process. Larger J c (77 K, 1 T) values of Sn-doped YBCO film are observed over a wide field-orientation angle (θ) except the field-orientations close to the ab-plane of YBCO (85° c values for 85° 2 SnO 5.5 (YBSO) phase by STEM (scanning transmission electron microscopy)-EDS (energy dispersive X-ray spectroscopy) analysis. Further analyses by HR-TEM (high resolution-transmission electron microscopy) revealed that YBSO nanoparticles completely surrounded by the YBCO matrix had random orientation with YBCO while those located at the interface of YBCO/STO substrate had epitaxial relationship with YBCO

One-step preparation of antimicrobial silver nanoparticles in polymer matrix

Energy Technology Data Exchange (ETDEWEB)

Lyutakov, O., E-mail: lyutakoo@vscht.cz; Kalachyova, Y. [Institute of Chemical Technology, Department of Solid State Engineering (Czech Republic); Solovyev, A. [Institute of Chemical Process Fundamentals of the ASCR (Czech Republic); Vytykacova, S. [Institute of Chemical Technology, Department of Glass and Ceramics (Czech Republic); Svanda, J.; Siegel, J. [Institute of Chemical Technology, Department of Solid State Engineering (Czech Republic); Ulbrich, P. [Institute of Chemical Technology, Department of Biochemistry and Microbiology (Czech Republic); Svorcik, V. [Institute of Chemical Technology, Department of Solid State Engineering (Czech Republic)

2015-03-15

Simple one-step procedure for in situ preparation of silver nanoparticles (AgNPs) in the polymer thin films is described. Nanoparticles (NPs) were prepared by reaction of N-methyl pyrrolidone with silver salt in semi-dry polymer film and characterized by transmission electron microscopy, XPS, and UV–Vis spectroscopy techniques. Direct synthesis of NPs in polymer has several advantages; even though it avoids time-consuming NPs mixing with polymer matrix, uniform silver distribution in polymethylmethacrylate (PMMA) films is achieved without necessity of additional stabilization. The influence of the silver concentration, reaction temperature and time on reaction conversion rate, and the size and size-distribution of the AgNPs was investigated. Polymer films doped with AgNPs were tested for their antibacterial activity on Gram-negative bacteria. Antimicrobial properties of AgNPs/PMMA films were found to be depended on NPs concentration, their size and distribution. Proposed one-step synthesis of functional polymer containing AgNPs is environmentally friendly, experimentally simple and extremely quick. It opens up new possibilities in development of antimicrobial coatings with medical and sanitation applications.

One-step preparation of antimicrobial silver nanoparticles in polymer matrix

International Nuclear Information System (INIS)

Lyutakov, O.; Kalachyova, Y.; Solovyev, A.; Vytykacova, S.; Svanda, J.; Siegel, J.; Ulbrich, P.; Svorcik, V.

2015-01-01

Simple one-step procedure for in situ preparation of silver nanoparticles (AgNPs) in the polymer thin films is described. Nanoparticles (NPs) were prepared by reaction of N-methyl pyrrolidone with silver salt in semi-dry polymer film and characterized by transmission electron microscopy, XPS, and UV–Vis spectroscopy techniques. Direct synthesis of NPs in polymer has several advantages; even though it avoids time-consuming NPs mixing with polymer matrix, uniform silver distribution in polymethylmethacrylate (PMMA) films is achieved without necessity of additional stabilization. The influence of the silver concentration, reaction temperature and time on reaction conversion rate, and the size and size-distribution of the AgNPs was investigated. Polymer films doped with AgNPs were tested for their antibacterial activity on Gram-negative bacteria. Antimicrobial properties of AgNPs/PMMA films were found to be depended on NPs concentration, their size and distribution. Proposed one-step synthesis of functional polymer containing AgNPs is environmentally friendly, experimentally simple and extremely quick. It opens up new possibilities in development of antimicrobial coatings with medical and sanitation applications

Antimicrobial activity of thin solid films of silver doped hydroxyapatite prepared by sol-gel method.

Science.gov (United States)

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x(Ag) = 0.5 are effective against E. coli and S. aureus after 24 h.

Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

Directory of Open Access Journals (Sweden)

Simona Liliana Iconaru

2014-01-01

Full Text Available In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM with energy Dispersive X-ray attachment (X-EDS, Fourier transform infrared spectroscopy (FT-IR, and glow discharge optical emission spectroscopy (GDOES. These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with xAg=0.5 are effective against E. coli and S. aureus after 24 h.

Antimicrobial Activity of Thin Solid Films of Silver Doped Hydroxyapatite Prepared by Sol-Gel Method

Science.gov (United States)

Iconaru, Simona Liliana; Chapon, Patrick; Le Coustumer, Philippe; Predoi, Daniela

2014-01-01

In this work, the preparation and characterization of silver doped hydroxyapatite thin films were reported and their antimicrobial activity was characterized. Silver doped hydroxyapatite (Ag:HAp) thin films coatings substrate was prepared on commercially pure Si disks by sol-gel method. The silver doped hydroxyapatite thin films were characterized by various techniques such as Scanning electron microscopy (SEM) with energy Dispersive X-ray attachment (X-EDS), Fourier transform infrared spectroscopy (FT-IR), and glow discharge optical emission spectroscopy (GDOES). These techniques have permitted the structural and chemical characterisation of the silver doped hydroxyapatite thin films. The antimicrobial effect of the Ag:HAp thin films on Escherichia coli and Staphylococcus aureus bacteria was then investigated. This is the first study on the antimicrobial effect of Ag:HAp thin films obtained by sol-gel method. The results of this study have shown that the Ag:HAp thin films with x Ag = 0.5 are effective against E. coli and S. aureus after 24 h. PMID:24523630

Electrical and optical properties of ultrasonically sprayed Al-doped zinc oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Babu, B.J., E-mail: jbabu@cinvestav.mx [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D.F., C.P. 07360 (Mexico); Maldonado, A.; Velumani, S.; Asomoza, R. [Department of Electrical Engineering-SEES, CINVESTAV-IPN, Zacatenco, D.F., C.P. 07360 (Mexico)

2010-10-25

Aluminium-doped ZnO (AZO) films were deposited by ultrasonic spray pyrolysis (USP) technique to investigate its potential application as antireflection coating and top contact layer for copper indium gallium diselenide (CIGS) based photovoltaic cells. The solution used to prepare AZO thin films contained 0.2 M of zinc acetate and 0.2 M of aluminium pentanedionate solutions in the order of 2, 3 and 4 at.% of Al/Zn. AZO films were deposited onto glass substrates at different substrate temperatures starting from 450 deg. C to 500 deg. C. XRD and FESEM analysis revealed the structural properties of the films and almost all the films possessed crystalline structure with a preferred (0 0 2) orientation except for the 4 at.% of Al. Grain size of AZO films varied from 29.7 to 37 nm for different substrate temperatures and atomic percentage of aluminium. The average optical transmittance of all films with the variation of doping concentration and substrate temperature was 75-90% in the visible range of wavelength 600-700 nm. Optical direct band gap value of 2, 3 and 4 at.% Al-doped films sprayed at different temperatures varied from 3.32 to 3.46 eV. Hall studies were carried out to analyze resistivity, mobility and carrier concentration of the films. AZO films deposited at different substrate temperatures and at various Al/Zn ratios showed resistivity ranging from 0.12 to 1.0 x 10{sup -2} {Omega} cm. Mobility value was {approx}5 cm{sup 2}/V s and carrier concentration value was {approx}7.7 x 10{sup 19} cm{sup -3}. Minimum electrical resistivity was obtained for the 3 at.% Al-doped film sprayed at 475 deg. C and its value was 1.0 x 10{sup -2} {Omega} cm with film thickness of 602 nm. The electrical conductivity of ZnO films was improved by aluminium doping.

Autophobicity and layering behavior of thin liquid-crystalline polymer films.

NARCIS (Netherlands)

Wielen, van der M.W.J.; Cohen Stuart, M.A.; Fleer, G.J.

1998-01-01

The stability against breaking-up of thin spin-coated films of liquid-crystalline polymers depends on the film thickness and annealing temperature. This study concerns side-chain liquid-crystalline polymers, based on alternating copolymers of maleic anhydride and mesogenic alkenes. The mesogenic

Realizing luminescent downshifting in ZnO thin films by Ce doping with enhancement of photocatalytic activity

Science.gov (United States)

Narayanan, Nripasree; Deepak, N. K.

2018-04-01

ZnO thin films doped with Ce at different concentration were deposited on glass substrates by spray pyrolysis technique. XRD analysis revealed the phase purity and polycrystalline nature of the films with hexagonal wurtzite geometry and the composition analysis confirmed the incorporation of Ce in the ZnO lattice in the case of doped films. Crystalline quality and optical transmittance diminished while electrical conductivity enhanced with Ce doping. Ce doping resulted in a red-shift of optical energy gap due to the downshift of the conduction band minimum after merging with Ce related impurity bands formed below the conduction band in the forbidden gap. In the room temperature photoluminescence spectra, UV emission intensity of the doped films decreased while the intensity of the visible emission band increased drastically implying the degradation in crystallinity as well as the incorporation of defect levels capable of luminescence downshifting. Ce doping showed improvement in photocatalytic efficiency by effectively trapping the free carriers and then transferring for dye degradation. Thus Ce doped ZnO thin films are capable of acting as luminescent downshifters as well as efficient photocatalysts.

Fluorine doped vanadium dioxide thin films for smart windows

International Nuclear Information System (INIS)

Kiri, Pragna; Warwick, Michael E.A.; Ridley, Ian; Binions, Russell

2011-01-01

Thermochromic fluorine doped thin films of vanadium dioxide were deposited from the aerosol assisted chemical vapour deposition reaction of vanadyl acetylacetonate, ethanol and trifluoroacetic acid on glass substrates. The films were characterised with scanning electron microscopy, variable temperature Raman spectroscopy and variable temperature UV/Vis spectroscopy. The incorporation of fluorine in the films led to an increase in the visible transmittance of the films whilst retaining the thermochromic properties. This approach shows promise for improving the aesthetic properties of vanadium dioxide thin films.

Thermomechanical properties of polymer nanocomposites: Exploring a unified relationship with planar polymer films

Science.gov (United States)

Bansal, Amitabh

The thermal and mechanical response of polymers, which provide limitations to their practical use, are greatly improved by the addition of a small fraction of an inorganic nanofiller. However, the resulting changes in polymer properties are poorly understood, primarily due to the non-uniform spatial distribution of nanoparticles. This research explores the properties of polystyrene filed with silica nanoparticles and illustrates for the first time that the thermodynamic properties of "polymer nanocomposites" are quantitatively equivalent to the well-understood case of planar polymer films with a uniform thickness. These ideas are quantified by drawing a direct analogy between thin film thickness and an appropriate average ligament thickness measured using electron microscopy. The change in polymer glass transition temperatures with decreasing ligament thickness were found to be quantitatively equivalent to the corresponding thin film data. In combination with viscoelastic properties of the nanocomposites that are in quantitative agreement with data from thin films, these conclusions provide a facile means of understanding and predicting the thermomechanical properties and, potentially, the engineering properties of practically relevant polymer nanocomposites. Grafting of high molecular weight polystyrene onto the silica nanoparticles greatly improves the dispersion quality of nanofillers and also provides a means to tailor the thermo-mechanical properties in nanocomposites. It is concluded that the grafted polystyrene is akin to polymer brushes on flat surfaces. The mobility and stiffness of these grafted chains are expected to be low as compared to the free polymer. In this context a mechanism for the increase in glass transition is proposed: (1) the stiff grafted chains will tend to decrease mobility and thus increase glass transition, (2) the extent of interdigitation of the grafted polystyrene into the matrix will determine the extent to which the nanocomposite

New Polymer Electrolyte Membranes Based on Acid Doped PBI For Fuel Cells Operating above 100°C

DEFF Research Database (Denmark)

Li, Qingfeng

2003-01-01

The technical achievement and challenges for the PEMFC technology based on perfluorosulfonic acid (PFSA) polymer membranes (e.g. Nafion®) are briefly discussed. The newest development for alternative polymer electrolytes for operation above 100°C. As one of the successful approaches to high...... operational temperatures, the development and evaluation of acid doped PBI membranes are reviewed, covering polymer synthesis, membrane casting, acid doping, physiochemical characterization and fuel cell tests....

Effect of Doping Phosphorescent Material and Annealing Treatment on the Performance of Polymer Solar Cells

Directory of Open Access Journals (Sweden)

Zixuan Wang

2013-01-01

Full Text Available A series of polymer solar cells (PSCs with P3HT:PCBM or P3HT:PCBM:Ir(btpy3 blend films as the active layer were fabricated under the same conditions. Effects of phosphorescent material Ir(btpy3 doping concentration and annealing temperature on the performance of PSCs were investigated. The short-circuit current density (Jsc and open-circuit voltage (Voc are increased by adopting P3HT:PCBM:Ir(btpy3 blend films as the active layer when the cells do not undergo annealing treatment. The increased Jsc should be attributed to the increase of photon harvesting induced by doping phosphorescent material Ir(btpy3 and the effective energy transfer from Ir(btpy3 to P3HT. The effective energy transfer from Ir(btpy3 to P3HT was demonstrated by time-resolved photoluminescence (PL spectra. The increased Voc is due to the photovoltaic effect between Ir(btpy3 and PCBM. The power conversion efficiency (PCE of PSCs with P3HT:PCBM as the active layer is increased from 0.19% to 1.49% by annealing treatment at 140°C for 10 minutes. The PCE of PSCs with P3HT:PCBM:Ir(btpy3 as the active layer is increased from 0.49% to 0.95% by annealing treatment at lower temperature at 100°C for 10 minutes.

Solution-mediated cladding doping of commercial polymer optical fibers

Science.gov (United States)

Stajanca, Pavol; Topolniak, Ievgeniia; Pötschke, Samuel; Krebber, Katerina

2018-03-01

Solution doping of commercial polymethyl methacrylate (PMMA) polymer optical fibers (POFs) is presented as a novel approach for preparation of custom cladding-doped POFs (CD-POFs). The presented method is based on a solution-mediated diffusion of dopant molecules into the fiber cladding upon soaking of POFs in a methanol-dopant solution. The method was tested on three different commercial POFs using Rhodamine B as a fluorescent dopant. The dynamics of the diffusion process was studied in order to optimize the doping procedure in terms of selection of the most suitable POF, doping time and conditions. Using the optimized procedure, longer segment of fluorescent CD-POF was prepared and its performance was characterized. Fiber's potential for sensing and illumination applications was demonstrated and discussed. The proposed method represents a simple and cheap way for fabrication of custom, short to medium length CD-POFs with various dopants.

Study of Polymeric Luminescent Blend (PC/PMMA) Doped with Europium Complex under Gamma-Iradiation

International Nuclear Information System (INIS)

Parra, D. F.

2006-01-01

Spectroscopic properties of blends formed by bisphenol-A polycarbonate (PC) and poly(methyl methacrylate) (PMMA) doped with europium in organic complex were studied. Polymeric luminescent blends are potential materials for many applications; however, little information has been reported concerning the stability under thermal and radiation conditions. Luminescent films were synthesized from europium thenoyltrifluoroacetonate at different concentrations doped in PC/PMMA blends. Films produced of the luminescent polymer blend were irradiated in a 60 C o source. Their luminescent properties, in the solid state, as well as, the thermal oxidative resistance after gamma irradiation was investigated. These systems were characterized by elemental analysis, thermogravimetry (TGA), differential scanning calorimetry (DSC) and infrared spectroscopy (FTIR). Based on TGA data, the thermal stability of PC/PMMA:(tta)3 system is higher than the polymer blend. The DSC results indicated that those new systems are chemically stables. The emission spectra of the Eu 3 +-tta complex doped in the PC/PMMA recorded at 298 and 77 K exhibited the characteristic bands arising from the 5 D 0 →7 F J transitions (J = 0-6). The luminescence intensity decreases with increasing of precursor concentration in the doped polymer obtained by chemical reaction. This result is different from that of samples obtained by physical method in melting doping. The blend was irradiated under ionizing radiation of 60 C o source. After irradiation of the luminescent films the physical properties of luminescence, thermal and oxidative stability were evaluated.(Fapesp and Cnpq financial support)

Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

Energy Technology Data Exchange (ETDEWEB)

Ravichandran, K., E-mail: kkr1365@yahoo.co [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India); Muruganantham, G.; Sakthivel, B. [P.G. and Research Department of Physics, AVVM. Sri Pushpum College, Poondi, Thanjavur District, Tamil Nadu 613503 (India)

2009-11-15

Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO{sub 2}:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl{sub 2} precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08x10{sup 14} lines/m{sup 2}) when compared with that of the undoped film (13.2x10{sup 14} lines/m{sup 2}), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 OMEGA/square) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl{sub 2} precursor (without using methanol or ethanol).

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

Science.gov (United States)

Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

Energy Technology Data Exchange (ETDEWEB)

Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

2015-02-15

Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

Biodegradation evaluation of recycled polyethylene doped with Moringa oleifera oil; Avaliacao da biodegradacao de filmes de polietileno reciclado dopados com oleo de Moringa oleifera

Energy Technology Data Exchange (ETDEWEB)

Bicalho, Luciana A.; Novack, Katia M.; Melo, Tania M.S., E-mail: knovack@iceb.ufop.br [Dept. de Quimica (DEQUI) - Universidade Federal de Ouro Preto (UFOP), Ouro Preto, MG (Brazil)

2011-07-01

Chemical modifications and use of additives are some of the mainly ways to obtain polymer materials with especial properties. Vegetable oils incorporated to polymers preserve their structure while make possible a reduction of degradation rate. This work proposed the use of polyethylene, one of the most common polymer commodities, because of its low cost and wide application. In this project it was verified the possibility of making polymer materials with properties of a natural product through the incorporation of Moringa oleifera oil to recycled low density polyethylene (LDPEr) in different proportions. The films were buried for different times and their degradation was evaluated.) Samples were characterized by DSC, TGA and XRD. It was observed that samples doped with Moringa oil showed lower degradation time. (author)

Ionic Liquid-Doped Gel Polymer Electrolyte for Flexible Lithium-Ion Polymer Batteries

Science.gov (United States)

Zhang, Ruisi; Chen, Yuanfen; Montazami, Reza

2015-01-01

Application of gel polymer electrolytes (GPE) in lithium-ion polymer batteries can address many shortcomings associated with liquid electrolyte lithium-ion batteries. Due to their physical structure, GPEs exhibit lower ion conductivity compared to their liquid counterparts. In this work, we have investigated and report improved ion conductivity in GPEs doped with ionic liquid. Samples containing ionic liquid at a variety of volume percentages (vol %) were characterized for their electrochemical and ionic properties. It is concluded that excess ionic liquid can damage internal structure of the batteries and result in unwanted electrochemical reactions; however, samples containing 40–50 vol % ionic liquid exhibit superior ionic properties and lower internal resistance compared to those containing less or more ionic liquids.

Exploring proton doping in poly-3-methylpyrrole by infrared spectroscopy

International Nuclear Information System (INIS)

Sanchez de la Blanca, E.; Carrillo, I.; Redondo, M.I.; Gonzalez-Tejera, M.J.; Garcia, M.V.

2007-01-01

Structural changes induced by electrochemical redox processes or by pH variations on conducting poly-3-methylpyrrole, electrochemically synthesized in NaClO 4 acetonitrile solution, have been studied by infrared spectroscopy. With this aim infrared spectra of perchlorate doped poly-3-methylpyrrole films at different oxidation states as well as after immersion in acid (pH = 1) and basic (pH = 12.6) aqueous solutions have been analysed. The existence of proton-doping mechanism in this polymer has been confirmed from the comparative study of spectra of oxidized/reduced and acid/basic treated polymer

Physical properties and characterization of Ag doped CdS thin films

International Nuclear Information System (INIS)

Shah, N.A.; Nazir, A.; Mahmood, W.; Syed, W.A.A.; Butt, S.; Ali, Z.; Maqsood, A.

2012-01-01

Highlights: ► CdS thin films were grown. ► By ion exchange, Ag was doped. ► Physical properties were investigated. - Abstract: Thin films of cadmium sulfide with very well defined preferential orientation and relatively high absorption coefficient were fabricated by thermal evaporation technique. The research is focused to the fabrication and characterization of the compositional data of CdS thin films obtained by using X-ray diffraction, scanning electron microscope along with energy dispersive X-ray spectroscopy. The optical properties were studied by using a UV-VIS-NIR spectrophotometer. The effects of silver-doping by ion exchange process on the properties of as-deposited CdS thin films have been investigated.

Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

International Nuclear Information System (INIS)

Valenti, Ilaria; Valeri, Sergio; Benedetti, Stefania; Bona, Alessandro di; Lollobrigida, Valerio; Perucchi, Andrea; Di Pietro, Paola; Lupi, Stefano; Torelli, Piero

2015-01-01

The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general

Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range

Energy Technology Data Exchange (ETDEWEB)

Valenti, Ilaria; Valeri, Sergio [CNR, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena (Italy); Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, Via G. Campi 213/a, 41125 Modena (Italy); Benedetti, Stefania, E-mail: stefania.benedetti@unimore.it; Bona, Alessandro di [CNR, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena (Italy); Lollobrigida, Valerio [Dipartimento di Scienze, Università Roma Tre, I-00146 Rome, Italy and Dipartimento di Matematica e Fisica, Università Roma Tre, I-00146 Rome (Italy); Perucchi, Andrea; Di Pietro, Paola [INSTM Udr Trieste-ST and Elettra-Sincrotrone Trieste S.C.p.A., Area Science Park, I-34012 Trieste (Italy); Lupi, Stefano [CNR-IOM and Dipartimento di Fisica, Università di Roma Sapienza, P.le Aldo Moro 2, I-00185 Roma (Italy); Torelli, Piero [Laboratorio TASC, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste (Italy)

2015-10-28

The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.

Multicomponent doped barium strontium titanate thin films for tunable microwave applications

Science.gov (United States)

Alema, Fikadu Legesse

In recent years there has been enormous progress in the development of barium strontium titanate (BST) films for tunable microwave applications. However, the properties of BST films still remain inferior compared to bulk materials, limiting their use for microwave technology. Understanding the film/substrate mismatch, microstructure, and stoichiometry of BST films and finding the necessary remedies are vital. In this work, BST films were deposited via radio frequency magnetron sputtering method and characterized both analytically and electrically with the aim of optimizing their properties. The stoichiometry, crystal structure, and phase purity of the films were studied by varying the oxygen partial pressure (OPP) and total gas pressure (TGP) in the chamber. A better stoichiometric match between film and target was achieved when the TGP is high (> 30 mTorr). However, the O2/Ar ratio should be adjusted as exceeding a threshold of 2 mTorr in OPP facilitates the formation of secondary phases. The growth of crystalline film on platinized substrates was achieved only with a lower temperature grown buffer layer, which acts as a seed layer by crystallizing when the temperature increases. Concurrent Mg/Nb doping has significantly improved the properties of BST thin films. The doped film has shown an average tunability of 53%, which is only ˜8 % lower than the value for the undoped film. This drop is associated with the Mg ions whose detrimental effects are partially compensated by Nb ions. Conversely, the doping has reduced the dielectric loss by ˜40 % leading to a higher figure of merit. Moreover, the two dopants ensure a charge neutrality condition which resulted in significant leakage current reduction. The presence of large amounts of empty shallow traps related to Nb Ti localize the free carriers injected from the contacts; thus increase the device control voltage substantially (>10 V). A combinatorial thin film synthesis method based on co-sputtering of two BST

Scanning Angle Raman spectroscopy in polymer thin film characterization

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Vy H.T. [Iowa State Univ., Ames, IA (United States)

2015-12-19

The focus of this thesis is the application of Raman spectroscopy for the characterization of thin polymer films. Chapter 1 provides background information and motivation, including the fundamentals of Raman spectroscopy for chemical analysis, scanning angle Raman scattering and scanning angle Raman scattering for applications in thin polymer film characterization. Chapter 2 represents a published manuscript that focuses on the application of scanning angle Raman spectroscopy for the analysis of submicron thin films with a description of methodology for measuring the film thickness and location of an interface between two polymer layers. Chapter 3 provides an outlook and future directions for the work outlined in this thesis. Appendix A, contains a published manuscript that outlines the use of Raman spectroscopy to aid in the synthesis of heterogeneous catalytic systems. Appendix B and C contain published manuscripts that set a foundation for the work presented in Chapter 2.

Synthesis and characterization of Ag doped TiO{sub 2} heterojunction films and their photocatalytic performances

Energy Technology Data Exchange (ETDEWEB)

Demirci, Selim, E-mail: selim.demirci@marmara.edu.tr [Marmara University, Department of Metallurgical and Materials Engineering, Kadiköy, 34722 Istanbul (Turkey); Dikici, Tuncay [Izmir Katip Celebi University, Department of Materials Science and Engineering, Cigli, 35620 Izmir (Turkey); Yurddaskal, Metin [Department of Metallurgical and Materials Engineering, Dokuz Eylul University, 35390 Izmir (Turkey); Center for Fabrication and Application of Electronic Materials, Dokuz Eylul University, 35390 Izmir (Turkey); Gultekin, Serdar [Department of Nanoscience and Nanoengineering, Dokuz Eylul University, 35390 İzmir (Turkey); Experimental Science Applications and Research Center, Celal Bayar University, 45140 Manisa (Turkey); Toparli, Mustafa; Celik, Erdal [Department of Metallurgical and Materials Engineering, Dokuz Eylul University, 35390 Izmir (Turkey); Department of Nanoscience and Nanoengineering, Dokuz Eylul University, 35390 İzmir (Turkey); Center for Fabrication and Application of Electronic Materials, Dokuz Eylul University, 35390 Izmir (Turkey)

2016-12-30

Highlights: • Ag doped TiO{sub 2} films were successfully synthesized by sol–gel spin coating method. • Ag in TiO{sub 2} lattice enters in intermediate states to decrease TiO{sub 2} bandgap energy. • Ag dopants increase the photoactivity and superhydrophilicity. • The degradation kinetics of methylene blue was studied. • The 0.7 mol% of Ag was found to be the optimum concentration. - Abstract: In this study, undoped and silver (Ag) doped titanium dioxide (TiO{sub 2}) films were successfully synthesized by sol-gel spin coating technique on the Si substrates. Photocatalytic activities of the TiO{sub 2} films with different Ag content were investigated for the degradation of methylene blue (MB) under UV light irradiation. The crystal phase structure, surface morphology, chemical and optical properties of Ag-doped TiO{sub 2} films were characterized using an X-ray diffractometer (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), UV–vis spectrophotometer, and FTIR spectrophotometer. The results showed that the Ag-doped TiO{sub 2} films calcined at 500 °C had the crystalline anatase phases and the surface morphologies with some cracks. Ag substitution into TiO{sub 2} matrix enhanced the photocatalytic activity of TiO{sub 2} films under UV light irradiation as compared to the undoped TiO{sub 2} film. Furthermore, the results indicated that the 0.7% Ag doped TiO{sub 2} film exhibited a superior photocatalytic activity than that of undoped and other Ag-doped TiO{sub 2} films. This study demonstrated the potential of an application of Ag doped films to efficiently treat dissolved organic contaminants in water.

Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Pathak, Trilok Kumar [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Kumar, Vinod, E-mail: vinod.phy@gmail.com [Department of Physics, University of the Free State, Bloemfontein (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, Bloemfontein (South Africa); Purohit, L.P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India)

2016-01-01

Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm{sup 2}/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

“Electro-Click” on Conducting Polymer Films

DEFF Research Database (Denmark)

Hansen, Thomas Steen; Lind, Johan Ulrik; Daugaard, Anders Egede

for their own functionalization with high spatial resolution. Interdigitated microelectrodes prepared from the azide-containing conducting polymer were selectively functionalized in sequence by two alkyne-modified fluorophores by control of the applied potentials. “Electro-click” on conducting polymer films......An azide substituted 3,4-ethylenedioxythiophene monomer is polymerised to yield a PEDOT like polymer with available azide groups (Figure 1). The azide groups enable post polymerization functionalization of the conducting polymer using a 1,3 dipolar cycloaddition reaction – also denoted “click...

Electrodeposition of zinc-doped silane films for corrosion protection of mild steels

International Nuclear Information System (INIS)

Wu Liankui; Hu Jiming; Zhang Jianqing

2012-01-01

Highlights: ► Metallic zinc is doped into organosilane films by one-step electrodeposition. ► The composite films exhibit the improved corrosion resistance of mild steels. ► Zinc-doping provides additional cathodic protection to the mild steels. - Abstract: Organosilane/zinc composite films are prepared by one-step electrodeposition onto cold-rolled steels for corrosion protection. Electrochemical impedance spectroscopy measurement, bulk solution immersion and wet heat tests all show that the composite films have improved corrosion performance. X-ray photoelectron spectroscopy measurement suggests the successful encapsulation of metallic zinc. The embedding of metallic zinc results in negative shift in open-circuit potential of the film-covered electrodes. Such cathodic protection effect given by the metallic zinc provides the improved corrosion resistance of the composite films.

Oxygen-doped Sb{sub 4}Te phase change films for high-temperature data retention and low-power application

Energy Technology Data Exchange (ETDEWEB)

Hu, Yifeng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); School of Mathematics and Physics, Jiangsu Teachers University of Technology, Changzhou 213001 (China); Sun, Mingcheng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China)

2013-02-25

Highlights: Black-Right-Pointing-Pointer O-doped Sb{sub 4}Te phase-change films were reported. Black-Right-Pointing-Pointer The amorphous-to-crystalline transitions of O-doped Sb{sub 4}Te films were studied. Black-Right-Pointing-Pointer By doping oxygen, the stability of Sb{sub 4}Te films is improved greatly. Black-Right-Pointing-Pointer The resistance of the Sb{sub 4}Te films increases by doping oxygen. - Abstract: The amorphous-to-crystalline transitions of oxygen-doped Sb{sub 4}Te (STO) films are investigated by in situ film resistance measurements. The crystalline temperature and resistance of the oxygen-doped films increase. The analysis of X-ray diffractomer (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that the films with doping of a small amount of oxygen atoms can refine the grain size and form oxide, improving the resistance and thermal stability of phase change films. Excessive oxygen in Sb{sub 4}Te will make Te separate, resulting in deteriorating the stability. As a result, STO2 film has the relatively high activation energy for crystallization. The 10-year lifetime is raised from 29 Degree-Sign C of undoped Sb{sub 4}Te film to 102 Degree-Sign C of STO3 film. Phase transition from amorphous state to crystalline state is observed at relatively lower power, compared with a device using Ge{sub 2}Sb{sub 2}Te{sub 5} film.

Structural properties of pure and Fe-doped Yb films prepared by vapor condensation

Energy Technology Data Exchange (ETDEWEB)

Rojas-Ayala, C., E-mail: chachi@cbpf.br [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil); Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Lima, P.O.B. 14-149, Lima 14 (Peru); Passamani, E.C. [Departamento de Física, Universidade Federal do Espírito Santo, Vitória 29075-910, ES (Brazil); Suguihiro, N.M. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil); Litterst, F.J. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil); Institut für Physik der Kondensierten Materie, Technische Universität Braunschweig, 38106 Braunschweig (Germany); Baggio Saitovitch, E. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180, RJ (Brazil)

2014-10-15

Ytterbium and iron-doped ytterbium films were prepared by vapor quenching on Kapton substrates at room temperature. Structural characterization was performed by X-ray diffraction and transmission electron microscopy. The aim was to study the microstructure of pure and iron-doped films and thereby to understand the effects induced by iron incorporation. A coexistence of face centered cubic and hexagonal close packed-like structures was observed, the cubic-type structure being the dominant contribution. There is an apparent thickness dependence of the cubic/hexagonal relative ratios in the case of pure ytterbium. Iron-clusters induce a crystalline texture effect, but do not influence the cubic/hexagonal volume fraction. A schematic model is proposed for the microstructure of un-doped and iron-doped films including the cubic- and hexagonal-like structures, as well as the iron distribution in the ytterbium matrix. - Highlights: • Pure and Fe-doped Yb films have been prepared by vapor condensation. • Coexistence of fcc- and hcp-type structures was observed. • No oxide phases have been detected. • Fe-clustering does not affect the fcc/hcp ratio, but favors a crystalline texture. • A schematic model is proposed to describe microscopically the microstructure.

Improvement of the optoelectronic properties of tin oxide transparent conductive thin films through lanthanum doping

Energy Technology Data Exchange (ETDEWEB)

Mrabet, C., E-mail: chokri.mrabet@hotmail.com; Boukhachem, A.; Amlouk, M.; Manoubi, T.

2016-05-05

This work highlights some physical investigations on tin oxide thin films doped with different lanthanum content (ratio La–to-Sn = 0–3%). Such doped thin films have been successfully grown by spray pyrolysis onto glass substrates at 450 °C. X-ray diffraction (XRD) patterns showed that SnO{sub 2}:La thin films were polycrystalline with tetragonal crystal structure. The preferred orientation of crystallites for undoped SnO{sub 2} thin film was along (110) plane, whereas La-doped ones have rather preferential orientations along (200) direction. Although the grain size values exhibited a decreasing tendency with increasing doping content confirming the role of La as a grain growth inhibitor, dislocation density and microstrain values showed an increasing tendency. Also, Raman spectroscopy shows the bands corresponding to the tetragonal structure for the entire range of La doping. The same technique confirms the presence of La{sub 2}O{sub 3} as secondary phase. Moreover, SEM images showed a porous architecture with presence of big clusters with different sizes and shapes resulting from the agglomeration of small grains round shaped. Photoluminescence spectra of SnO{sub 2}:La thin films exhibit a decrease in the emission intensity with La concentration due to the decrease in grain size. Optical transmittance spectra of the films showed high transparency (∼80%) in the visible region. The dispersion of the refractive index is discussed using both Cauchy model and Wemple–Di-Domenico method. The optical band gap values vary slightly with La doping and were found to be around 3.8 eV. It has been found that La doping causes a pronounced decrease in the sheet resistance by up to two orders of magnitude and allows improving the Haacke's figure of merit (Φ) of the sprayed thin films. Moreover, we have introduced for a first time a new figure of merit for qualifying photo-thermal conversion applications. The obtained high conducting and transparent SnO{sub 2}:La

Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

KAUST Repository

Oba, Tatsuya; Vacha, Martin

2012-01-01

We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films

Preparation of manganese-doped ZnO thin films and their ...

Indian Academy of Sciences (India)

Various physical and chemical techniques that has been used to deposit Mn:ZnO thin films .... appearance and Mn-doped films were slightly brownish with a good adherence to the ..... shows a constantly decreasing trend with increasing man-.

P-doped strontium titanate grown using two target pulsed laser deposition for thin film solar cells

Science.gov (United States)

Man, Hamdi

Thin-film solar cells made of Mg-doped SrTiO3 p-type absorbers are promising candidates for clean energy generation. This material shows p-type conductivity and also demonstrates reasonable absorption of light. In addition, p-type SrTiO3 can be deposited as thin films so that the cost can be lower than the competing methods. In this work, Mg-doped SrTiO3 (STO) thin-films were synthesized and analyzed in order to observe their potential to be employed as the base semiconductor in photovoltaic applications. Mg-doped STO thin-films were grown by using pulsed laser deposition (PLD) using a frequency quadrupled Yttrium Aluminum Garnet (YAG) laser and with a substrate that was heated by back surface absorption of infrared (IR) laser light. The samples were characterized using X-ray photoelectron spectroscopy (XPS) and it was observed that Mg atoms were doped successfully in the stoichiometry. Reflection high energy electron diffraction (RHEED) spectroscopy proved that the thin films were polycrystalline. Kelvin Probe work function measurements indicated that the work function of the films were 4.167 eV after annealing. UV/Vis Reflection spectroscopy showed that Mg-doped STO thin-films do not reflect significantly except in the ultraviolet region of the spectrum where the reflection percentage increased up to 80%. Self-doped STO thin-films, Indium Tin Oxide (ITO) thin films and stainless steel foil (SSF) were studied in order to observe their characteristics before employing them in Mg-doped STO based solar cells. Self-doped STO thin films were grown using PLD and the results showed that they are capable of serving as the n-type semiconductor in solar cell applications with oxygen vacancies in their structure and low reflectivity. Indium Tin Oxide thin-films grown by PLD system showed low 25-50 ?/square sheet resistance and very low reflection features. Finally, commercially available stainless steel foil substrates were excellent substrates for the inexpensive growth of

Doping dependence of electrical and thermal conductivity of nanoscale polyaniline thin films

Energy Technology Data Exchange (ETDEWEB)

Jin Jiezhu; Wang Qing [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Haque, M A [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

2010-05-26

We performed simultaneous characterization of electrical and thermal conductivity of 55 nm thick polyaniline (PANI) thin films doped with different levels of camphor sulfonic acids (CSAs). The effect of the doping level is more pronounced on electrical conductivity than on thermal conductivity of PANIs, thereby greatly affecting their ratio that determines the thermoelectric efficiency. At the 60% (the molar ratio of CSA to phenyl-N repeat unit of PANI) doping level, PANI exhibited the maximum electrical and thermal conductivity due to the formation of mostly delocalized structures. Whereas polarons are the charge carriers responsible for the electrical conduction, phonons are believed to play a dominant role in the heat conduction in nanoscale doped PANI thin films.

Morphology of polymer-based films for organic photovoltaics

OpenAIRE

Ruderer, Matthias A.

2012-01-01

In this thesis, polymer-based films are examined for applications in organic photovoltaics. Polymer-fullerene, polymer-polymer and diblock copolymer systems are characterized as active layer materials. The focus is on experimental parameters influencing the morphology formation of the active layer in organic solar cells. Scattering and imaging techniques provide a complete understanding of the internal structure on different length scales which is compared to spectroscopic and photovoltaic pr...

Crystal structure and thin film morphology of BBL ladder polymer

Energy Technology Data Exchange (ETDEWEB)

Song, H H [Department of Macromolecular Science, Han Nam University, Taejon (Korea, Republic of); Fratini, A V [Department of Chemistry, University of Dayton, Dayton, OH (United States); Chabinyc, M [Department of Chemistry, University of Dayton, Dayton, OH (United States); Price, G E [University of Dayton Research, Dayton, OH (United States); Agrawal, A K [Systran Corporation, Dayton, OH (United States); Wang, C S [University of Dayton Research, Dayton, OH (United States); Burkette, J [University of Dayton Research, Dayton, OH (United States); Dudis, D S [Materials Directorate, Wright Laboratory, Wright-Patterson Air Force Base, OH (United States); Arnold, F E [Materials Directorate, Wright Laboratory, Wright-Patterson Air Force Base, OH (United States)

1995-03-01

Crystal structure and morphology of poly[7-oxo-7H-benz(d,e)imidazo(4`,5`:5,6)-benzimidazo(2,1-a)isoquinoline-3,4:10,11-tetrayl-10-carbonyl] (BBL) ladder-like polymer were studied. The polymer forms a two-dimensional lattice of nematic liquid crystalline structure. An orthorhombic unit cell with cell parameters of a=7.87 b=3.37 c=11.97A was determined from the fiber diffraction pattern. In thin films, the rigid chains spontaneously form a layered structure across the film thickness, but in a very unusual manner, i.e. the very large molecular plane is standing perpendicularly to the film surface plane. The results are identical to our recent results of poly(p-phenylene benzobisthiazole) (PBT) film [7]. The polymer, however, lost its anisotropic order upon extrusion into a film and resulted in a fiber-like structure. (orig.)

Influence of film thickness and Fe doping on LPG sensing properties of Mn3O4 thin film grown by SILAR method

Science.gov (United States)

Belkhedkar, M. R.; Ubale, A. U.

2018-05-01

Nanocrystalline Fe doped and undoped Mn3O4 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates using MnCl2 and NaOH as cationic and anionic precursors. The grazing incidence X-ray diffraction (GIXRD) and field emission scanning electron microscopy (FESEM)) have been carried out to analyze structural and surface morphological properties of the films. The LPG sensing performance of Mn3O4thin films have been studied by varying temperature, concentration of LPG, thickness of the film and doping percentage of Fe. The LPG response of the Mn3O4thin films were found to be enhances with film thickness and decreases with increased Fe doping (0 to 8 wt. %) at 573 K temperature.

Fabrication and Enhanced Photoelectrochemical Performance of MoS₂/S-Doped g-C₃N₄ Heterojunction Film.

Science.gov (United States)

Ye, Lijuan; Wang, Dan; Chen, Shijian

2016-03-02

We report on a novel MoS2/S-doped g-C3N4 heterojunction film with high visible-light photoelectrochemical (PEC) performance. The heterojunction films are prepared by CVD growth of S-doped g-C3N4 film on indium-tin oxide (ITO) glass substrates, with subsequent deposition of a low bandgap, 1.69 eV, visible-light response MoS2 layer by hydrothermal synthesis. Adding thiourea into melamine as the coprecursor not only facilitates the growth of g-C3N4 films but also introduces S dopants into the films, which significantly improves the PEC performance. The fabricated MoS2/S-doped g-C3N4 heterojunction film offers an enhanced anodic photocurrent of as high as ∼1.2 × 10(-4) A/cm(2) at an applied potential of +0.5 V vs Ag/AgCl under the visible light irradiation. The enhanced PEC performance of MoS2/S-doped g-C3N4 film is believed due to the improved light absorption and the efficient charge separation of the photogenerated charge at the MoS2/S-doped g-C3N4 interface. The convenient preparation of carbon nitride based heterojunction films in this work can be widely used to design new heterojunction photoelectrodes or photocatalysts with high performance for H2 evolution.

Air purification by heterogeneous photocatalytic oxidation with multi-doped thin film titanium dioxide

Energy Technology Data Exchange (ETDEWEB)

O' Keeffe, Cormac, E-mail: cormac.okeeffe@theta.ie [Theta Chemicals Ltd., Station Road, Ballindine, Claremorris, Mayo (Ireland); Gannon, Paul; Gilson, Paul [Theta Chemicals Ltd., Station Road, Ballindine, Claremorris, Mayo (Ireland); Kafizas, Andreas; Parkin, Ivan P. [Department of Chemistry, University College London, Christopher Ingold Laboratories, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Binions, Russell [School of Engineering and Materials Sciences, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

2013-06-30

Multi element-doped titania films (F, S-TiO{sub 2}) were produced via sol–gel techniques and deposited on glass and ceramic substrates with an annealing temperature of 500 °C. The films were characterised by X-ray diffraction, Raman Spectroscopy, X-ray photoelectron spectroscopy and scanning electron microscopy. The X-ray diffraction and Raman spectrum showed the films to have an anatase TiO{sub 2} structure with X-ray photoelectron spectroscopy confirming the presence of sulphur, fluorine and carbon doping. The titania coated glass and ceramic substrates were compared against two commercially available TiO{sub 2} coated products for the photo-destruction of NO{sub 2(g)}. The study included both equivalent indoor and outdoor test conditions. The multi-doped titania films were shown to provide a genuine method of air purification under both visible (room lighting) and UVA lighting with photo-destruction rates as high as 72%. - Highlights: • Synthesis of multi-doped titania films • Excellent NO{sub 2} conversion rates for coated ceramic tiles • Excellent NO{sub 2} conversion rates for coated glass substrates • Significantly better conversion rates for existing commercial products.

Visible luminescence from highly textured Tb{sup 3+} doped RF sputtered zinc oxide films

Energy Technology Data Exchange (ETDEWEB)

Sreedharan, R. Sreeja; Krishnan, R. Reshmi; Bose, R. Jolly; Kavitha, V.S.; Suresh, S. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Vinodkumar, R. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Department of Physics, University College, Thiruvananthapuram, Kerala (India); Sudheer, S.K. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Pillai, V.P. Mahadevan, E-mail: vpmpillai9@gmail.com [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India)

2017-04-15

Highly transparent, luminescent, c-axis oriented Tb{sup 3+} doped ZnO films are prepared by RF magnetron sputtering technique. The structural, morphological, optical and luminescence properties of these films are investigated as a function of Tb{sup 3+} doping concentration by X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), spectroscopic ellipsometry, UV-Visible spectroscopy and photoluminescence spectroscopy. The as-deposited films are found to be highly crystalline with wurtzite hexagonal phase of ZnO. The characteristic features of hexagonal wurtzite structure of ZnO, particularly the appearance of non-polar E{sub 2} modes are easily identified from the Raman spectra of the films. The surface morphology of the films revealed by FESEM and AFM images present a dense distribution of grains. The elemental analysis carried out using energy dispersive X-ray (EDX) spectra confirms the incorporation of Tb{sup 3+} ions in the ZnO lattice. The films are highly transparent in the visible region. Using ellipsometric analysis, the variation of refractive index, dielectric constant and thickness of the films are studied as a function of Tb{sup 3+} doping concentration. The photoluminescence spectra of the Tb{sup 3+} doped ZnO films recorded using an excitation radiation of wavelength 325 nm from a He-Cd laser exhibit visible luminescence ~430, 490, 516 and 542 nm. The origin of visible emissions ~490 and 542 nm in the doped films can be attributed to 5D{sub 4}→7F{sub 6} and 5D{sub 4}→7F{sub 5} transition of Tb{sup 3+} ion respectively. The intensity of the emission at 542 nm is found to be decreasing at higher doping concentration due to concentration quenching effect. The blue emission in the films can be attributed to the electron transition from shallow donor level formed by interstitial Zn atoms to the top of the valence band. The origin of the visible emission ~516 nm is attributed

Singlet Exciton Lifetimes in Conjugated Polymer Films for Organic Solar Cells

KAUST Repository

Dimitrov, Stoichko; Schroeder, Bob; Nielsen, Christian; Bronstein, Hugo; Fei, Zhuping; McCulloch, Iain; Heeney, Martin; Durrant, James

2016-01-01

The lifetime of singlet excitons in conjugated polymer films is a key factor taken into account during organic solar cell device optimization. It determines the singlet exciton diffusion lengths in polymer films and has a direct impact

Conductivity behavior of very thin gold films ruptured by mass transport in photosensitive polymer film

Energy Technology Data Exchange (ETDEWEB)

Linde, Felix; Sekhar Yadavalli, Nataraja; Santer, Svetlana [Department of Experimental Physics, Institute for Physics and Astronomy, University of Potsdam, 14476 Potsdam (Germany)

2013-12-16

We report on conductivity behavior of very thin gold layer deposited on a photosensitive polymer film. Under irradiation with light interference pattern, the azobenzene containing photosensitive polymer film undergoes deformation at which topography follows a distribution of intensity, resulting in the formation of a surface relief grating. This process is accompanied by a change in the shape of the polymer surface from flat to sinusoidal together with a corresponding increase in surface area. The gold layer placed above deforms along with the polymer and ruptures at a strain of 4%. The rupturing is spatially well defined, occurring at the topographic maxima and minima resulting in periodic cracks across the whole irradiated area. We have shown that this periodic micro-rupturing of a thin metal film has no significant impact on the electrical conductivity of the films. We suggest a model to explain this phenomenon and support this by additional experiments where the conductivity is measured in a process when a single nanoscopic scratch is formed with an AFM tip. Our results indicate that in flexible electronic materials consisting of a polymer support and an integrated metal circuit, nano- and micro cracks do not alter significantly the behavior of the conductivity unless the metal is disrupted completely.

In situ ellipsometry — A powerful tool for monitoring alkali doping of organic thin films

International Nuclear Information System (INIS)

Haidu, F.; Ludemann, M.; Schäfer, P.; Gordan, O.D.; Zahn, D.R.T.

2014-01-01

The changes of the optical properties of several organic thin films induced by potassium doping were monitored using in situ spectroscopic ellipsometry. The samples were prepared in a high vacuum chamber by organic molecular deposition. Then, potassium (K) was evaporated by passing current through K getters. The three different organic molecules used, show very distinct and different spectral behaviour upon doping. While for Tris-(8-hydroxyquinoline)-aluminium(III) and N,N′-Di-[(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine only small shifts of the spectral features were noticed, Manganese Phthalocyanine revealed significant changes of the optical properties induced by the K doping. This work indicates that the K doping process can have a dramatic effect on the electronic and the optical properties of the organic molecules, but the effect on the optical spectra remains specific for each organic molecule used, and cannot be easily predicted. - Highlights: • Monitoring organic film growth and doping with in situ spectroscopic ellipsometry • K doped organic thin films • Optical properties of organic thin films change by K doping. • The changes in the optical spectra remain specific for each organic molecule used

Electrical and optical properties of ITO and ITO/Cr-doped ITO films

International Nuclear Information System (INIS)

Caricato, A.P.; Cesaria, M.; Luches, A.; Martino, M.; Valerini, D.; Maruccio, G.; Catalano, M.; Cola, A.; Manera, M.G.; Lomascolo, M.; Taurino, A.; Rella, R.

2010-01-01

In this paper we report on the effects of the insertion of Cr atoms on the electrical and optical properties of indium tin oxide (ITO) films to be used as electrodes in spin-polarized light-emitting devices. ITO films and ITO(80 nm)/Cr-doped ITO(20 nm) bilayers and Cr-doped ITO films with a thickness of 20 nm were grown by pulsed ArF excimer laser deposition. The optical, structural, morphological and electrical properties of ITO films and ITO/Cr-doped structures were characterized by UV-Visible transmission and reflection spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and Hall-effect analysis. For the different investigations, the samples were deposited on different substrates like silica and carbon coated Cu grids. ITO films with a thickness of 100 nm, a resistivity as low as ∝4 x 10 -4 Ω cm, an energy gap of ∝4.3 eV and an atomic scale roughness were deposited at room temperature without any post-deposition process. The insertion of Cr into the ITO matrix in the upper 20 nm of the ITO matrix induced variations in the physical properties of the structure like an increase of average roughness (∝0.4-0.5 nm) and resistivity (up to ∝8 x 10 -4 Ω cm). These variations were correlated to the microstructure of the Cr-doped ITO films with particular attention to the upper 20 nm. (orig.)

Electrical and optical properties of ITO and ITO/Cr-doped ITO films

Science.gov (United States)

Caricato, A. P.; Cesaria, M.; Luches, A.; Martino, M.; Maruccio, G.; Valerini, D.; Catalano, M.; Cola, A.; Manera, M. G.; Lomascolo, M.; Taurino, A.; Rella, R.

2010-12-01

In this paper we report on the effects of the insertion of Cr atoms on the electrical and optical properties of indium tin oxide (ITO) films to be used as electrodes in spin-polarized light-emitting devices. ITO films and ITO(80 nm)/Cr-doped ITO(20 nm) bilayers and Cr-doped ITO films with a thickness of 20 nm were grown by pulsed ArF excimer laser deposition. The optical, structural, morphological and electrical properties of ITO films and ITO/Cr-doped structures were characterized by UV-Visible transmission and reflection spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and Hall-effect analysis. For the different investigations, the samples were deposited on different substrates like silica and carbon coated Cu grids. ITO films with a thickness of 100 nm, a resistivity as low as ˜4×10-4 Ω cm, an energy gap of ˜4.3 eV and an atomic scale roughness were deposited at room temperature without any post-deposition process. The insertion of Cr into the ITO matrix in the upper 20 nm of the ITO matrix induced variations in the physical properties of the structure like an increase of average roughness (˜0.4-0.5 nm) and resistivity (up to ˜8×10-4 Ω cm). These variations were correlated to the microstructure of the Cr-doped ITO films with particular attention to the upper 20 nm.

Electrical and optical properties of ITO and ITO/Cr-doped ITO films

Energy Technology Data Exchange (ETDEWEB)

Caricato, A.P.; Cesaria, M.; Luches, A.; Martino, M.; Valerini, D. [University of Salento, Physics Department, Lecce (Italy); Maruccio, G. [University of Salento, Scuola Superiore Isufi, Lecce (Italy); Catalano, M.; Cola, A.; Manera, M.G.; Lomascolo, M.; Taurino, A.; Rella, R. [IMM-CNR, Institute for Microelectronics and Microsystems, Lecce (Italy)

2010-12-15

In this paper we report on the effects of the insertion of Cr atoms on the electrical and optical properties of indium tin oxide (ITO) films to be used as electrodes in spin-polarized light-emitting devices. ITO films and ITO(80 nm)/Cr-doped ITO(20 nm) bilayers and Cr-doped ITO films with a thickness of 20 nm were grown by pulsed ArF excimer laser deposition. The optical, structural, morphological and electrical properties of ITO films and ITO/Cr-doped structures were characterized by UV-Visible transmission and reflection spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and Hall-effect analysis. For the different investigations, the samples were deposited on different substrates like silica and carbon coated Cu grids. ITO films with a thickness of 100 nm, a resistivity as low as {proportional_to}4 x 10{sup -4} {omega} cm, an energy gap of {proportional_to}4.3 eV and an atomic scale roughness were deposited at room temperature without any post-deposition process. The insertion of Cr into the ITO matrix in the upper 20 nm of the ITO matrix induced variations in the physical properties of the structure like an increase of average roughness ({proportional_to}0.4-0.5 nm) and resistivity (up to {proportional_to}8 x 10{sup -4}{omega} cm). These variations were correlated to the microstructure of the Cr-doped ITO films with particular attention to the upper 20 nm. (orig.)

Improvement in switching characteristics and long-term stability of Zn-O-N thin-film transistors by silicon doping

Directory of Open Access Journals (Sweden)

Hiroshi Tsuji

2017-06-01

Full Text Available The effects of silicon doping on the properties of Zn-O-N (ZnON films and on the device characteristics of ZnON thin-film transistors (TFTs were investigated by co-sputtering silicon and zinc targets. Silicon doping was effective at decreasing the carrier concentration in ZnON films; therefore, the conductivity of the films can be controlled by the addition of a small amount of silicon. Doped silicon atoms also form bonds with nitrogen atoms, which suppresses nitrogen desorption from the films. Furthermore, Si-doped ZnON-TFTs are demonstrated to exhibit less negative threshold voltages, smaller subthreshold swings, and better long-term stability than non-doped ZnON-TFTs.

Neutron Detection Utilizing Gadolinium Doped Hafnium Oxide Films

National Research Council Canada - National Science Library

Blasy, Bryan D

2008-01-01

... retains monoclinic local symmetery for all levels of doping. Current as a function of voltage experiments identified the films as having poor diode characteristics with high leakage current in the forward bias region...

Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

KAUST Repository

Zhou, Guangnan

2018-04-03

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

KAUST Repository

Zhou, Guangnan; Lee, Kwang Hong; Anjum, Dalaver H.; Zhang, Qiang; Zhang, Xixiang; Tan, Chuan Seng; Xia, Guangrui

2018-01-01

Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

Effects of Nb and Sr doping on crystal structure of epitaxial BaTiO3 thin films on MgO substrates

International Nuclear Information System (INIS)

Kim, Yongsam; Chen, Chunhua; Saiki, Atsushi; Wakiya, Naoki; Shinozaki, Kazuo; Mizutani, Nobuyasu

2002-01-01

Niobium (Nb) and strontium (Sr) doped barium titanate (BT) films were deposited by radio frequency (RF) magnetron sputtering with Nb and Sr doped BT ceramic targets, respectively. The effect of Nb and Sr doping on the crystal structure of epitaxial BaTiO 3 thin films on MgO substrates was investigated. The crystal structure of the films was examined using the reciprocal space mapping measurement. All the films exhibit a cube-on-cube relation with respect to the substrates. As the amount of doped Sr increased, both of the in-plane and out-of-plane lattice constants of Sr doped BT films slowly approached the BT bulk values. On the other hand, the lattice constants of Nb doped BT films were rapidly coming close to the bulk values. These indicated that the lattices of doped BT films were relaxed as the amount of doped elements increased. In addition, Nb doping had greater influence on the relaxation of the films than Sr doping for the same content of dopant. (author)

Ionic Liquid-Doped Gel Polymer Electrolyte for Flexible Lithium-Ion Polymer Batteries

Directory of Open Access Journals (Sweden)

Ruisi Zhang

2015-05-01

Full Text Available Application of gel polymer electrolytes (GPE in lithium-ion polymer batteries can address many shortcomings associated with liquid electrolyte lithium-ion batteries. Due to their physical structure, GPEs exhibit lower ion conductivity compared to their liquid counterparts. In this work, we have investigated and report improved ion conductivity in GPEs doped with ionic liquid. Samples containing ionic liquid at a variety of volume percentages (vol % were characterized for their electrochemical and ionic properties. It is concluded that excess ionic liquid can damage internal structure of the batteries and result in unwanted electrochemical reactions; however, samples containing 40–50 vol % ionic liquid exhibit superior ionic properties and lower internal resistance compared to those containing less or more ionic liquids.

Anomalous magnetism of superconducting Mg-doped InN film

Directory of Open Access Journals (Sweden)

P. H. Chang

2016-02-01

Full Text Available We report on the Meissner effect of Mg-doped InN film with superconducting transition onset temperature Tc,onset of 5 K. Mg-doped InN is magnetically ordered and exhibits a simultaneous first-order magnetic and electric transition near 50 K. Its behavior is similar to that of iron-based superconductors. A strong correlation is proposed to exist between structural distortion and superconductivity when Mg is doped into InN. The suppression of magnetic ordering close to Tc by doping is further demonstrated by anisotropic magnetoresistance and M-H measurements. The findings suggest that the superconducting mechanism in the system may not be conventional BCS.

Characteristics of W Doped Nanocrystalline Carbon Films Prepared by Unbalanced Magnetron Sputtering.

Science.gov (United States)

Park, Yong Seob; Park, Chul Min; Kim, Nam-Hoon; Kim, Jae-Moon

2016-05-01

Nanocrystalline tungsten doped carbon (WC) films were prepared by unbalanced magnetron sputtering. Tungsten was used as the doping material in carbon thin films with the aim of application as a contact strip in an electric railway. The structural, physical, and electrical properties of the fabricated WC films with various DC bias voltages were investigated. The films had a uniform and smooth surface. Hardness and frication characteristics of the films were improved, and the resistivity and sheet resistance decreased with increasing negative DC bias voltage. These results are associated with the nanocrystalline WC phase and sp(2) clusters in carbon networks increased by ion bombardment enhanced with increasing DC bias voltage. Consequently, the increase of sp(2) clusters containing WC nanocrystalline in the carbon films is attributed to the improvement in the physical and electrical properties.

Antimicrobial polymer films for food packaging

Science.gov (United States)

Concilio, S.; Piotto, S.; Sessa, L.; Iannelli, P.; Porta, A.; Calabrese, E. C.; Galdi, M. R.; Incarnato, L.

2012-07-01

New antimicrobial polymeric systems were realized introducing new antimicrobial azo compounds in PP and LDPE matrices. The polymeric materials containing different percentage of azo compounds were mold-casted and the obtained film were tested in vitro against Gram+ and Gram- bacteria and fungi. These results hold promise for the fabrication of bacteria-resistant polymer films by means of simple melt processing with antimicrobial azo-dyes.

Growing of synthetic diamond boron-doped films for analytical applications

International Nuclear Information System (INIS)

Barros, Rita de Cassia Mendes de; Suarez-Iha, Maria Encarnacion Vazquez; Corat, Evaldo Jose; Iha, Koshun

1999-01-01

Chemical vapor deposition (CVD) technology affords the possibility of producing synthetic diamond film electrodes, with several advantageous properties due the unique characteristics of diamond. In this work, we present the study of boron-doped diamond films growth on molybdenum and silicon substrates, using boron trioxide as dopant in a filament assisted CVD reactor. The objective was to obtain semiconductor diamond for use as electrode. The samples were characterized by scanning electron microscopy and Raman spectroscopy to confirm morphology and doping levels. We have assembled electrodes with the various samples, Pt, Mo, Si and diamond, by utilizing brass and left as base materials. The electrodes were tested in neutralization potentiometric titrations for future use in electroanalysis. Boron-doped electrodes have very good performance compared with Pt, widely used in analytical chemistry. (author)