WorldWideScience

Sample records for spintronic devices based

  1. Metallic spintronic devices

    CERN Document Server

    Wang, Xiaobin

    2014-01-01

    Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devicesDiscusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modelingExplores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysisInvestigates spintronic device write and read optimization in light of spintronic memristive effectsConsiders spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effectsProposes unique solutions for ...

  2. Dynamic Circuit Model for Spintronic Devices

    KAUST Repository

    Alawein, Meshal

    2017-01-09

    In this work we propose a finite-difference scheme based circuit model of a general spintronic device and benchmark it with other models proposed for spintronic switching devices. Our model is based on the four-component spin circuit theory and utilizes the widely used coupled stochastic magnetization dynamics/spin transport framework. In addition to the steady-state analysis, this work offers a transient analysis of carrier transport. By discretizing the temporal and spatial derivatives to generate a linear system of equations, we derive new and simple finite-difference conductance matrices that can, to the first order, capture both static and dynamic behaviors of a spintronic device. We also discuss an extension of the spin modified nodal analysis (SMNA) for time-dependent situations based on the proposed scheme.

  3. Dynamic Circuit Model for Spintronic Devices

    KAUST Repository

    Alawein, Meshal; Fariborzi, Hossein

    2017-01-01

    In this work we propose a finite-difference scheme based circuit model of a general spintronic device and benchmark it with other models proposed for spintronic switching devices. Our model is based on the four-component spin circuit theory and utilizes the widely used coupled stochastic magnetization dynamics/spin transport framework. In addition to the steady-state analysis, this work offers a transient analysis of carrier transport. By discretizing the temporal and spatial derivatives to generate a linear system of equations, we derive new and simple finite-difference conductance matrices that can, to the first order, capture both static and dynamic behaviors of a spintronic device. We also discuss an extension of the spin modified nodal analysis (SMNA) for time-dependent situations based on the proposed scheme.

  4. Spintronic materials and devices based on antiferromagnetic metals

    OpenAIRE

    Wang, Y.Y.; Song, C.; Zhang, J.Y.; Pan, F.

    2017-01-01

    In this paper, we review our recent experimental developments on antiferromagnet (AFM) spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring i...

  5. Spin-polarized transport properties of a pyridinium-based molecular spintronics device

    Science.gov (United States)

    Zhang, J.; Xu, B.; Qin, Z.

    2018-05-01

    By applying a first-principles approach based on non-equilibrium Green's functions combined with density functional theory, the transport properties of a pyridinium-based "radical-π-radical" molecular spintronics device are investigated. The obvious negative differential resistance (NDR) and spin current polarization (SCP) effect, and abnormal magnetoresistance (MR) are obtained. Orbital reconstruction is responsible for novel transport properties such as that the MR increases with bias and then decreases and that the NDR being present for both parallel and antiparallel magnetization configurations, which may have future applications in the field of molecular spintronics.

  6. CMOS-compatible spintronic devices: a review

    Science.gov (United States)

    Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

    2016-11-01

    For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

  7. Spintronics-based computing

    CERN Document Server

    Prenat, Guillaume

    2015-01-01

    This book provides a comprehensive introduction to spintronics-based computing for the next generation of ultra-low power/highly reliable logic, which is widely considered a promising candidate to replace conventional, pure CMOS-based logic. It will cover aspects from device to system-level, including magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods. This book is accessible to a variety of readers and little or no background in magnetism and spin electronics are required to understand its content.  The multidisciplinary team of expert authors from circuits, devices, computer architecture, CAD and system design reveal to readers the potential of spintronics nanodevices to reduce power consumption, improve reliability and enable new functionality.  .

  8. Spintronic materials and devices based on antiferromagnetic metals

    Directory of Open Access Journals (Sweden)

    Y.Y. Wang

    2017-04-01

    Full Text Available In this paper, we review our recent experimental developments on antiferromagnet (AFM spintronics mainly comprising Mn-based noncollinear AFM metals. IrMn-based tunnel junctions and Hall devices have been investigated to explore the manipulation of AFM moments by magnetic fields, ferromagnetic materials and electric fields. Room-temperature tunneling anisotropic magnetoresistance based on IrMn as well as FeMn has been successfully achieved, and electrical control of the AFM exchange spring is realized by adopting ionic liquid. In addition, promising spin-orbit effects in AFM as well as spin transfer via AFM spin waves reported by different groups have also been reviewed, indicating that the AFM can serve as an efficient spin current source. To explore the crucial role of AFM acting as efficient generators, transmitters, and detectors of spin currents is an emerging topic in the field of magnetism today. AFM metals are now ready to join the rapidly developing fields of basic and applied spintronics, enriching this area of solid-state physics and microelectronics.

  9. Oxide materials for spintronic device applications

    Science.gov (United States)

    Prestgard, Megan Campbell

    Spintronic devices are currently being researched as next-generation alternatives to traditional electronics. Electronics, which utilize the charge-carrying capabilities of electrons to store information, are fundamentally limited not only by size constraints, but also by limits on current flow and degradation, due to electro-migration. Spintronics devices are able to overcome these limitations, as their information storage is in the spin of electrons, rather than their charge. By using spin rather than charge, these current-limiting shortcomings can be easily overcome. However, for spintronic devices to be fully implemented into the current technology industry, their capabilities must be improved. Spintronic device operation relies on the movement and manipulation of spin-polarized electrons, in which there are three main processes that must be optimized in order to maximize device efficiencies. These spin-related processes are: the injection of spin-polarized electrons, the transport and manipulation of these carriers, and the detection of spin-polarized currents. In order to enhance the rate of spin-polarized injection, research has been focused on the use of alternative methods to enhance injection beyond that of a simple ferromagnetic metal/semiconductor injector interface. These alternatives include the use of oxide-based tunnel barriers and the modification of semiconductors and insulators for their use as ferromagnetic injector materials. The transport of spin-polarized carriers is heavily reliant on the optimization of materials' properties in order to enhance the carrier mobility and to quench spin-orbit coupling (SOC). However, a certain degree of SOC is necessary in order to allow for the electric-field, gate-controlled manipulation of spin currents. Spin detection can be performed via both optical and electrical techniques. Using electrical methods relies on the conversion between spin and charge currents via SOC and is often the preferred method for

  10. Future perspectives for spintronic devices

    International Nuclear Information System (INIS)

    Hirohata, Atsufumi; Takanashi, Koki

    2014-01-01

    Spintronics is one of the emerging research fields in nanotechnology and has been growing very rapidly. Studies of spintronics were started after the discovery of giant magnetoresistance in 1988, which utilized spin-polarized electron transport across a non-magnetic metallic layer. Within 10 years, this discovery had been implemented into hard disk drives, the most common storage media, followed by recognition through the award of the Nobel Prize for Physics 19 years later. We have never experienced such fast development in any scientific field. Spintronics research is now moving into second-generation spin dynamics and beyond. In this review, we first examine the historical advances in spintronics together with the background physics, and then describe major device applications. (topical review)

  11. Tunable Magnetic Resonance in Microwave Spintronics Devices

    Science.gov (United States)

    Chen, Yunpeng; Fan, Xin; Xie, Yunsong; Zhou, Yang; Wang, Tao; Wilson, Jeffrey D.; Simons, Rainee N.; Chui, Sui-Tat; Xiao, John Q.

    2015-01-01

    Magnetic resonance is one of the key properties of magnetic materials for the application of microwave spintronics devices. The conventional method for tuning magnetic resonance is to use an electromagnet, which provides very limited tuning range. Hence, the quest for enhancing the magnetic resonance tuning range without using an electromagnet has attracted tremendous attention. In this paper, we exploit the huge exchange coupling field between magnetic interlayers, which is on the order of 4000 Oe and also the high frequency modes of coupled oscillators to enhance the tuning range. Furthermore, we demonstrate a new scheme to control the magnetic resonance frequency. Moreover, we report a shift in the magnetic resonance frequency as high as 20 GHz in CoFe based tunable microwave spintronics devices, which is 10X higher than conventional methods.

  12. Organic-based magnon spintronics

    Science.gov (United States)

    Liu, Haoliang; Zhang, Chuang; Malissa, Hans; Groesbeck, Matthew; Kavand, Marzieh; McLaughlin, Ryan; Jamali, Shirin; Hao, Jingjun; Sun, Dali; Davidson, Royce A.; Wojcik, Leonard; Miller, Joel S.; Boehme, Christoph; Vardeny, Z. Valy

    2018-03-01

    Magnonics concepts utilize spin-wave quanta (magnons) for information transmission, processing and storage. To convert information carried by magnons into an electric signal promises compatibility of magnonic devices with conventional electronic devices, that is, magnon spintronics1. Magnons in inorganic materials have been studied widely with respect to their generation2,3, transport4,5 and detection6. In contrast, resonant spin waves in the room-temperature organic-based ferrimagnet vanadium tetracyanoethylene (V(TCNE)x (x ≈ 2)), were detected only recently7. Herein we report room-temperature coherent magnon generation, transport and detection in films and devices based on V(TCNE)x using three different techniques, which include broadband ferromagnetic resonance (FMR), Brillouin light scattering (BLS) and spin pumping into a Pt adjacent layer. V(TCNE)x can be grown as neat films on a large variety of substrates, and it exhibits extremely low Gilbert damping comparable to that in yttrium iron garnet. Our studies establish an alternative use for organic-based magnets, which, because of their synthetic versatility, may substantially enrich the field of magnon spintronics.

  13. Spintronics from materials to devices

    CERN Document Server

    Felser, Claudia

    2013-01-01

    Spintronics is an emerging technology exploiting the spin degree of freedom and has proved to be very promising for new types of fast electronic devices. Amongst the anticipated advantages of spintronics technologies, researchers have identified the non-volatile storage of data with high density and low energy consumption as particularly relevant. This monograph examines the concept of half-metallic compounds perspectives to obtain novel solutions and discusses several oxides such as perovskites, double perovskites and CrO2 as well as Heusler compounds. Such materials can be designed and made

  14. Spintronics Based on Topological Insulators

    Science.gov (United States)

    Fan, Yabin; Wang, Kang L.

    2016-10-01

    Spintronics using topological insulators (TIs) as strong spin-orbit coupling (SOC) materials have emerged and shown rapid progress in the past few years. Different from traditional heavy metals, TIs exhibit very strong SOC and nontrivial topological surface states that originate in the bulk band topology order, which can provide very efficient means to manipulate adjacent magnetic materials when passing a charge current through them. In this paper, we review the recent progress in the TI-based magnetic spintronics research field. In particular, we focus on the spin-orbit torque (SOT)-induced magnetization switching in the magnetic TI structures, spin-torque ferromagnetic resonance (ST-FMR) measurements in the TI/ferromagnet structures, spin pumping and spin injection effects in the TI/magnet structures, as well as the electrical detection of the surface spin-polarized current in TIs. Finally, we discuss the challenges and opportunities in the TI-based spintronics field and its potential applications in ultralow power dissipation spintronic memory and logic devices.

  15. Fabrication of tunnel junction-based molecular electronics and spintronics devices

    International Nuclear Information System (INIS)

    Tyagi, Pawan

    2012-01-01

    Tunnel junction-based molecular devices (TJMDs) are highly promising for realizing futuristic electronics and spintronics devices for advanced logic and memory operations. Under this approach, ∼2.5 nm molecular device elements bridge across the ∼2-nm thick insulator of a tunnel junction along the exposed side edge(s). This paper details the efforts and insights for producing a variety of TJMDs by resolving multiple device fabrication and characterization issues. This study specifically discusses (i) compatibility between tunnel junction test bed and molecular solutions, (ii) optimization of the exposed side edge profile and insulator thickness for enhancing the probability of molecular bridging, (iii) effect of fabrication process-induced mechanical stresses, and (iv) minimizing electrical bias-induced instability after the device fabrication. This research will benefit other researchers interested in producing TJMDs efficiently. TJMD approach offers an open platform to test virtually any combination of magnetic and nonmagnetic electrodes, and promising molecules such as single molecular magnets, porphyrin, DNA, and molecular complexes.

  16. Magnetization switching schemes for nanoscale three-terminal spintronics devices

    Science.gov (United States)

    Fukami, Shunsuke; Ohno, Hideo

    2017-08-01

    Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

  17. PREFACE International Symposium on Spintronic Devices and Commercialization 2010

    Science.gov (United States)

    Du, You-wei; Judy, Jack; Qian, Zhenghong; Wang, Jianping

    2011-01-01

    SSDC logo Preface The International Symposium on Spintronic Devices and Commercialization (ISSDC' 2010) was held in Beijing, China, from 21 to 24 October 2010. The aim of the symposium was to provide an opportunity for international experts, academics, researchers, practitioners and students working in the areas of spintronic theories, spintronic materials, and spintronic devices to exchange information on the R&D and commercialization of spintronic materials and devices. New developments, concepts, future research trends and potential commercialization areas were also discussed. The topics covered by ISSDC' 2010 were: Fundmental Spintronic Theories/Experiments Spin polarization, spin-dependent scattering, spin relaxation, spin manipulation and optimization, as well as other related characterizations and applications, etc. Spintronic Materials Giant magnetoresistance materials, magnetic tunnel junction materials, magnetic semiconductor materials, molecular spintronic materials. Spintronic Devices Sensors, isolators, spin logic devices and magnetic random access memories (MRAMs), microwave devices, spin diodes, spin transistor, spin filters and detectors, spin optoelectronic devices, spin quantum devices, single chip computer, spin molecule and single electron devices. Other Magnetic Materials Soft magnetic materials, hard magnetic materials, magneto-optical materials, magnetostriction materials. Applications of Spintronic Devices Magnetic position/angle/velocity/rotation velocity sensors, magnetic encoders, magnetic compasses, bio-medical magnetic devices and other applications. Future Research Trends and the Commercialization of Spintronic Devices Approximately 85 scientists from almost 10 countries participated in the conference. The conference featured 6 keynote lectures, 8 invited lectures, 12 contributed lectures and about 30 posters. We would like to express our gratitude to all participants for their presentations and discussions, which made the conference

  18. Silicon spintronics with ferromagnetic tunnel devices

    International Nuclear Information System (INIS)

    Jansen, R; Sharma, S; Dash, S P; Min, B C

    2012-01-01

    In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology. (topical review)

  19. Spintronics in nanoscale devices

    CERN Document Server

    Hedin, Eric R

    2013-01-01

    By exploiting the novel properties of quantum dots and nanoscale Aharonov-Bohm rings together with the electronic and magnetic properties of various semiconductor materials and graphene, researchers have conducted numerous theoretical and computational modeling studies and experimental tests that show promising behavior for spintronics applications. Spin polarization and spin-filtering capabilities and the ability to manipulate the electron spin state through external magnetic or electric fields have demonstrated the promise of workable nanoscale devices for computing and memory applications.

  20. Fiscal 2000 pioneering research on the spintronic device basic technology; 2000 nendo spintronic soshi kiban gijutsu sendo kenkyu hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Researchers specializing in technologies of magnetism or semiconductor were drafted from the industrial, official, and academic circles, who conducted hearings, patent investigations, overseas surveys, and the like, concerning spintronics. Collected in this report are the outline of the research and development of spintronic device technology, its current state and tasks and its importance from social and economic viewpoints, and the strategy that Japan should follow in the research and development of the technology. Important spintronic device technologies now attracting attention are mentioned below. The nonvolatile magnetic memory device MRAM (magnetic random access memory) is supposed to be the device which will enjoy practical application first among like devices. It is expected that the spin conduction device will lead to novel functions when the possibilities of the spin-dependent electric conduction phenomenon are further pursued. It is hoped that the spin optical device will be used as a light isolator, light spin logic device, field induced variable wavelength laser device, spin laser device, high-speed light switch, and so forth. It is necessary to watch the development of a spin-aided quantum computer which is still at the stage of basic study. (NEDO)

  1. Hybrid Spintronic-CMOS Spiking Neural Network with On-Chip Learning: Devices, Circuits, and Systems

    Science.gov (United States)

    Sengupta, Abhronil; Banerjee, Aparajita; Roy, Kaushik

    2016-12-01

    Over the past decade, spiking neural networks (SNNs) have emerged as one of the popular architectures to emulate the brain. In SNNs, information is temporally encoded and communication between neurons is accomplished by means of spikes. In such networks, spike-timing-dependent plasticity mechanisms require the online programing of synapses based on the temporal information of spikes transmitted by spiking neurons. In this work, we propose a spintronic synapse with decoupled spike-transmission and programing-current paths. The spintronic synapse consists of a ferromagnet-heavy-metal heterostructure where the programing current through the heavy metal generates spin-orbit torque to modulate the device conductance. Low programing energy and fast programing times demonstrate the efficacy of the proposed device as a nanoelectronic synapse. We perform a simulation study based on an experimentally benchmarked device-simulation framework to demonstrate the interfacing of such spintronic synapses with CMOS neurons and learning circuits operating in the transistor subthreshold region to form a network of spiking neurons that can be utilized for pattern-recognition problems.

  2. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  3. Large resistance change on magnetic tunnel junction based molecular spintronics devices

    Science.gov (United States)

    Tyagi, Pawan; Friebe, Edward

    2018-05-01

    Molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies provided insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.

  4. Superconducting spin switch based on superconductor-ferromagnet nanostructures for spintronics

    International Nuclear Information System (INIS)

    Kehrle, Jan; Mueller, Claus; Obermeier, Guenter; Schreck, Matthias; Gsell, Stefan; Horn, Siegfried; Tidecks, Reinhard; Zdravkov, Vladimir; Morari, Roman; Sidorencko, Anatoli; Prepelitsa, Andrei; Antropov, Evgenii; Socrovisciiuc, Alexei; Nold, Eberhard; Tagirov, Lenar

    2011-01-01

    Very rapid developing area, spintronics, needs new devices, based on new physical principles. One of such devices - a superconducting spin-switch, consists of ferromagnetic and superconducting layers, and is based on a new phenomenon - reentrant superconductivity. The tuning of the superconducting and ferromagnetic layers thickness is investigated to optimize superconducting spin-switch effect for Nb/Cu 41 Ni 59 based nanoscale layered systems.

  5. Nanostructured graphene for spintronics

    DEFF Research Database (Denmark)

    Gregersen, Søren Schou; Power, Stephen; Jauho, Antti-Pekka

    2017-01-01

    Zigzag edges of the honeycomb structure of graphene exhibit magnetic polarization, making them attractive as building blocks for spintronic devices. Here, we show that devices with zigzag-edged triangular antidots perform essential spintronic functionalities, such as spatial spin splitting or spin...

  6. Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices

    Science.gov (United States)

    Riminucci, Alberto; Graziosi, Patrizio; Calbucci, Marco; Cecchini, Raimondo; Prezioso, Mirko; Borgatti, Francesco; Bergenti, Ilaria; Dediu, Valentin Alek

    2018-04-01

    The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (˜0.1 V), that are those at which the spin valve behavior is usually observed, the charge transport was modelled by nearest neighbor hopping in intra-gap impurity levels, with a charge carrier density of n0 = (1.44 ± 0.21) × 1015 cm-3 at room temperature. Such a low carrier density can explain why no magnetoresistance was observed.

  7. Boron nitride nanotubes for spintronics.

    Science.gov (United States)

    Dhungana, Kamal B; Pati, Ranjit

    2014-09-22

    With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  8. Boron Nitride Nanotubes for Spintronics

    Directory of Open Access Journals (Sweden)

    Kamal B. Dhungana

    2014-09-01

    Full Text Available With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT, which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

  9. Evaluating Graphene as a Channel Material in Spintronic Logic Devices

    Science.gov (United States)

    Anugrah, Yoska

    Spintronics, a class of devices that exploit the spin properties of electrons in addition to the charge properties, promises the possibility for nonvolatile logic and memory devices that operate at low power. Graphene is a material in which the spin orientation of electrons can be conserved over a long distance, which makes it an attractive channel material in spintronics devices. In this dissertation, the properties of graphene that are interesting for spintronics applications are explored. A robust fabrication process is described for graphene spin valves using Al2O3 tunnel tunnel barriers and Co ferromagnetic contacts. Spin transport was characterized in both few-layer exfoliated and single-layer graphene, and spin diffusion lengths and spin relaxation times were extracted using the nonlocal spin valve geometry and Hanle measurements. The effect of input-output asymmetry on the spin transport was investigated. The effect of an applied drift electric field on spin transport was investigated and the spin diffusion length was found to be tunable by a factor of 8X (suppressed to 1.6 microm and enhanced to 13 microm from the intrinsic length of 4.6 microm using electric field of +/-1800 V/cm). A mechanism to induce asymmetry without excess power dissipation is also described which utilizes a double buried-gate structure to tune the Fermi levels on the input and output sides of a graphene spin logic device independently. It was found that different spin scattering mechanisms were at play in the two halves of a small graphene strip. This suggests that the spin properties of graphene are strongly affected by its local environment, e.g. impurities, surface topography, defects. Finally, two-dimensional materials beyond graphene have been explored as spin channels. One such material is phosphorene, which has low spin-orbit coupling and high mobility, and the interface properties of ferromagnets (cobalt and permalloy) with this material were explored. This work could

  10. Bipolar spintronics: from spin injection to spin-controlled logic

    International Nuclear Information System (INIS)

    Zutic, Igor; Fabian, Jaroslav; Erwin, Steven C

    2007-01-01

    An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, while providing a good description for data storage and magnetic memory devices, is not sufficient for signal processing and digital logic. In contrast, much less is known about possible applications of semiconductor-based spintronics and spin-polarized transport in related structures which could utilize strong intrinsic nonlinearities in current-voltage characteristics to implement spin-based logic. Here we discuss the challenges for realizing a particular class of structures in semiconductor spintronics: our proposal for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. We formulate the theoretical framework for bipolar spin-polarized transport, and describe several novel effects in two- and three-terminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization

  11. Spintronic logic design methodology based on spin Hall effect–driven magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Kang, Wang; Zhang, Youguang; Zhao, Weisheng; Wang, Zhaohao; Klein, Jacques-Olivier; Lv, Weifeng

    2016-01-01

    Conventional complementary metal-oxide-semiconductor (CMOS) technology is now approaching its physical scaling limits to enable Moore’s law to continue. Spintronic devices, as one of the potential alternatives, show great promise to replace CMOS technology for next-generation low-power integrated circuits in nanoscale technology nodes. Until now, spintronic memory has been successfully commercialized. However spintronic logic still faces many critical challenges (e.g. direct cascading capability and small operation gain) before it can be practically applied. In this paper, we propose a standard complimentary spintronic logic (CSL) design methodology to form a CMOS-like logic design paradigm. Using the spin Hall effect (SHE)-driven magnetic tunnel junction (MTJ) device as an example, we demonstrate CSL implementation, functionality and performance. This logic family provides a unified design methodology for spintronic logic circuits and partly solves the challenges of direct cascading capability and small operation gain in the previously proposed spintronic logic designs. By solving a modified Landau–Lifshitz–Gilbert equation, the magnetization dynamics in the free layer of the MTJ is theoretically described and a compact electrical model is developed. With this electrical model, numerical simulations have been performed to evaluate the functionality and performance of the proposed CSL design. Simulation results demonstrate that the proposed CSL design paradigm is rather promising for low-power logic computing. (paper)

  12. Focused issue on antiferromagnetic spintronics: An overview (Part of a collection of reviews on antiferromagnetic spintronics)

    KAUST Repository

    Jungwirth, T.

    2017-05-30

    This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detection of antiferromagnetic spins, to the fundamentals of antiferromagnetic dynamics in uniform or spin-textured systems, and to the interplay of antiferromagnetic spintronics with topological phenomena. The antiferromagnetic ordering can take a number of forms including fully compensated collinear, non-collinear, and non-coplanar magnetic lattices, compensated and uncompensated ferrimagnets, or metamagnetic materials hosting an antiferromagnetic to ferromagnetic phase transition. Apart from the variety of distinct magnetic crystal structures, the focused issue also encompasses spintronic phenomena and devices studied in antiferromagnet/ferromagnet heterostructures and in synthetic antiferromagnets.

  13. Focused issue on antiferromagnetic spintronics: An overview (Part of a collection of reviews on antiferromagnetic spintronics)

    KAUST Repository

    Jungwirth, T.; Sinova, J.; Manchon, Aurelien; Marti, X.; Wunderlich, J.; Felser, C.

    2017-01-01

    This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detection of antiferromagnetic spins, to the fundamentals of antiferromagnetic dynamics in uniform or spin-textured systems, and to the interplay of antiferromagnetic spintronics with topological phenomena. The antiferromagnetic ordering can take a number of forms including fully compensated collinear, non-collinear, and non-coplanar magnetic lattices, compensated and uncompensated ferrimagnets, or metamagnetic materials hosting an antiferromagnetic to ferromagnetic phase transition. Apart from the variety of distinct magnetic crystal structures, the focused issue also encompasses spintronic phenomena and devices studied in antiferromagnet/ferromagnet heterostructures and in synthetic antiferromagnets.

  14. Emerging materials and devices in spintronic integrated circuits for energy-smart mobile computing and connectivity

    International Nuclear Information System (INIS)

    Kang, S.H.; Lee, K.

    2013-01-01

    A spintronic integrated circuit (IC) is made of a combination of a semiconductor IC and a dense array of nanometer-scale magnetic tunnel junctions. This emerging field is of growing scientific and engineering interest, owing to its potential to bring disruptive device innovation to the world of electronics. This technology is currently being pursued not only for scalable non-volatile spin-transfer-torque magnetoresistive random access memory, but also for various forms of non-volatile logic (Spin-Logic). This paper reviews recent advances in spintronic IC. Key discoveries and breakthroughs in materials and devices are highlighted in light of the broader perspective of their application in low-energy mobile computing and connectivity systems, which have emerged as leading drivers for the prevailing electronics ecosystem

  15. Spintronics

    International Nuclear Information System (INIS)

    Grundler, Dirk

    2003-01-01

    Devices that exploit the spin of the electron promise to revolutionize microelectronics once polarized electrons can be injected efficiently into semiconductors at room temperature. Later this year physicists will be celebrating the centenary of Paul Dirac's birth. One of the most influential scientists of the 20th century, Dirac combined quantum mechanics and special relativity to explain the strange magnetic or 'spin' properties of the electron. What Dirac could not have foreseen, however, is how the spin of the electron could change the field of microelectronics. Indeed, the spin of the electron has attracted renewed interest recently because it promises a wide variety of new devices that combine logic, storage and sensor applications. Moreover, these 'Spintronics' devices might lead to quantum computers and quantum communication based on electronic solid-state devices, thus changing the perspective of information technology in the 21st century. Since the 1970s conventional electronic microprocessors have operated by shuttling packets of electronic charge along ever-smaller semiconductor channels. Although this trend will continue for the next few years, experts predict that silicon technology is beginning to approach fundamental limits. By 2008, for example, the width of the 'gate electrodes' in a silicon microprocessor will be just 45 nano metres across, which will place severe demands on the materials and manufacturing techniques used in the semiconductor industry. Indeed, the cost of implementing a new production line for such devices is predicted to reach $33bn. Although successors to silicon technology have been discussed, most of them rely on a complete set of new materials, new handling and processing techniques, and altered circuit design, among other developments. These new technologies include single-electron transistors and molecular-electronic devices based on organic materials or carbon nanotubes (see Carbon nanotubes roll on Physics World June

  16. Addressing the challenges of using ferromagnetic electrodes in the magnetic tunnel junction-based molecular spintronics devices

    International Nuclear Information System (INIS)

    Tyagi, Pawan; Friebe, Edward; Baker, Collin

    2015-01-01

    Addressing the challenges of using high-Curie temperature ferromagnetic (FM) electrodes is critical for molecular spintronics devices (MSDs) research. Two FM electrodes simultaneously chemically bonded with a thiol-functionalized molecule can produce novel MSDs to exploring new quantum mechanical phenomenon and computer technologies. For developing a commercially viable MSD, it is crucial to developing a device fabrication scheme that carefully considers FM electrodes’ susceptibility to oxidation, chemical etching, and stress-induced deformations during fabrication and usage. This paper studies NiFe, an alloy extensively used in present-day memory devices and high-temperature engineering applications, as a candidate FM electrode for the fabrication of MSDs. Our spectroscopic reflectance studies show that NiFe oxidized aggressively after heating beyond ∼90 °C. The NiFe surfaces, aged for several months or heated for several minutes below ∼90 °C, exhibited remarkable electrochemical activity and were found suitable for chemical bonding with the thiol-functionalized molecular device elements. NiFe also demonstrated excellent etching resistance against commonly used solvents and lithography related chemicals. Additionally, NiFe mitigated the adverse effects of mechanical stress by subsiding the stress-induced deformities. A magnetic tunnel junction-based MSD approach was designed by carefully considering the merits and limitations of NiFe. The device fabrication protocol considers the safe temperature limit to avoiding irreversible surface oxidation, the effect of mechanical stresses, surface roughness, and chemical etching. This paper provides foundational experimental insights in realizing a versatile MSD allowing a wide range of transport and magnetic studies

  17. Handbook of spintronics

    CERN Document Server

    Awschalom, David; Nitta, Junsaku

    2016-01-01

    This large reference work addresses a broad range of topics covering various aspects of spintronics science and technology, ranging from fundamental physics through materials properties and processing to established and emerging device technology and applications.  It comprises a collection of chapters from a large international team of leading researchers across academia and industry, providing readers with an up-to-date and comprehensive review of this dynamic field of research.   The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including the theory of giant magnetoresistance and an introduction to spin quantum computing.  Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrid materials including Heusler compounds, magnetic semiconductors, molecular spintronic materials, carbon nanotubes and graphene.  A separate section describes the various methods used in the char...

  18. Graphene-based spintronic components

    OpenAIRE

    Zeng, Minggang; Shen, Lei; Su, Haibin; Zhou, Miao; Zhang, Chun; Feng, Yuanping

    2010-01-01

    A major challenge of spintronics is in generating, controlling and detecting spin-polarized current. Manipulation of spin-polarized current, in particular, is difficult. We demonstrate here, based on calculated transport properties of graphene nanoribbons, that nearly +-100% spin-polarized current can be generated in zigzag graphene nanoribbons (ZGNRs) and tuned by a source-drain voltage in the bipolar spin diode, in addition to magnetic configurations of the electrodes. This unusual transpor...

  19. Optimization of Materials and Interfaces for Spintronic Devices

    Science.gov (United States)

    Clark, Billy

    In recent years' Spintronic devices have drawn a significant amount of research attention. This interest comes in large part from their ability to enable interesting and new technology such as Spin Torque Transfer Random Access Memory or improve existing technology such as High Signal Read Heads for Hard Disk Drives. For the former we worked on optimizing and improving magnetic tunnel junctions by optimizing their thermal stability by using Ta insertion layers in the free layer. We further tried to simplify the design of the MTJ stack by attempting to replace the Co/Pd multilayer with CoPd alloy. In this dissertation, we detail its development and examine the switching characteristics. Lastly we look at a highly spin polarized material, Fe2MnGe, for optimizing Hard Drive Disk read heads.

  20. A general circuit model for spintronic devices under electric and magnetic fields

    KAUST Repository

    Alawein, Meshal

    2017-10-25

    In this work, we present a circuit model of diffusive spintronic devices capable of capturing the effects of both electric and magnetic fields. Starting from a modified version of the well-established drift-diffusion equations, we derive general equivalent circuit models of semiconducting/metallic nonmagnets and metallic ferromagnets. In contrast to other models that are based on steady-state transport equations which might also neglect certain effects such as thermal fluctuations, spin dissipation in the ferromagnets, and spin precession under magnetic fields, our model incorporates most of the important physics and is based on a time-dependent formulation. An application of our model is shown through simulations of a nonlocal spin-valve under the presence of a magnetic field, where we reproduce experimental results of electrical measurements that demonstrate the phenomena of spin precession and dephasing (“Hanle effect”).

  1. Spintronics with multiferroics

    Science.gov (United States)

    Béa, H.; Gajek, M.; Bibes, M.; Barthélémy, A.

    2008-10-01

    In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO3 and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO3 allows the observation of a large tunnel magnetoresistance with Co and (La,Sr)MnO3 ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La,Bi)MnO3 as an active tunnel barrier in magnetic tunnel junctions with Au and (La,Sr)MnO3 electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La,Bi)MnO3 ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.

  2. Spintronics with multiferroics

    International Nuclear Information System (INIS)

    Bea, H; Gajek, M; Bibes, M; Barthelemy, A

    2008-01-01

    In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO 3 and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO 3 allows the observation of a large tunnel magnetoresistance with Co and (La,Sr)MnO 3 ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La,Bi)MnO 3 as an active tunnel barrier in magnetic tunnel junctions with Au and (La,Sr)MnO 3 electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La,Bi)MnO 3 ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.

  3. Spintronics with multiferroics

    Energy Technology Data Exchange (ETDEWEB)

    Bea, H; Gajek, M; Bibes, M; Barthelemy, A [Unite Mixte de Physique CNRS/Thales, Route departementale 128, F-91767 Palaiseau (France); Universite Paris-Sud, 91405 Orsay (France)], E-mail: agnes.barthelemy@thalesgroup.com

    2008-10-29

    In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO{sub 3} and its integration in several types of architectures. For instance, when used as a tunnel barrier, BiFeO{sub 3} allows the observation of a large tunnel magnetoresistance with Co and (La,Sr)MnO{sub 3} ferromagnetic electrodes. Also, its antiferromagnetic and magnetoelectric properties have been exploited to induce an exchange coupling with a ferromagnet. The mechanisms of such an exchange coupling open ways to electrically control magnetization and possibly the logic state of spintronics devices. We also discuss recent results concerning the use of ferromagnetic and ferroelectric (La,Bi)MnO{sub 3} as an active tunnel barrier in magnetic tunnel junctions with Au and (La,Sr)MnO{sub 3} electrodes. A four-resistance-state device has been obtained, with two states arising from a spin filtering effect due to the ferromagnetic character of the barrier and two resulting from the ferroelectric behavior of the (La,Bi)MnO{sub 3} ultrathin film. These results show that the additional degree of freedom provided by the ferroelectric polarization brings novel functionalities to spintronics, either as a extra order parameter for multiple-state memory elements, or as a handle for gate-controlled magnetic memories.

  4. The role of ion-implantation in the realization of spintronic devices in diamond

    Energy Technology Data Exchange (ETDEWEB)

    Kalish, Rafi, E-mail: kalish@si-sun1.technion.ac.il [Physics Department and Solid State Institute, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2012-02-01

    The application of single photons emitted by specific quantum systems is promising for quantum computers, cryptography and for other future nano-applications. These heavily rely on ion implantation both for selective single ion implantations as well as for the introduction of controlled damage with specific properties. Of particular promise is the negatively charged nitrogen-vacancy (NV{sup -}) defect center in diamond. This center has many desirable luminescence properties required for spintronic devices operational at room temperature, including a long relaxation time of the color center, emission of photons in the visible and the fact that it is produced in diamond, a material with outstanding mechanical and optical properties. This center is usually realized by nitrogen and/or vacancy producing ion implantations into diamond which, following annealing, leads to the formation of the desired NV{sup -} center. The single photons emitted by the decay of this center have to be transported to allow their exploitation. This can be best done by realizing very thin wave guides in single crystal diamond with/or without nano-scale cavities in the same diamond in which NV centers are produced. For this, advantage is taken of the unique property of heavily ion-damaged diamond to be converted, following annealing, to etchable graphite. Thus a free standing submicron thick diamond membrane containing the NV center can be obtained. If desirable, specific photonic crystal structures can be realized in them by the use of FIB. The various ion-implantation schemes used to produce NV centers in diamond, free standing diamond membranes, and photonic crystal structures in them are reviewed. The scientific problems and the technological challenges that have to be solved before actual practical realization of diamond based spintronic devices can be produced are discussed.

  5. A review on organic spintronic materials and devices: II. Magnetoresistance in organic spin valves and spin organic light emitting diodes

    Directory of Open Access Journals (Sweden)

    Rugang Geng

    2016-09-01

    Full Text Available In the preceding review paper, Paper I [Journal of Science: Advanced Materials and Devices 1 (2016 128–140], we showed the major experimental and theoretical studies on the first organic spintronic subject, namely organic magnetoresistance (OMAR in organic light emitting diodes (OLEDs. The topic has recently been of renewed interest as a result of a demonstration of the magneto-conductance (MC that exceeds 1000% at room temperature using a certain type of organic compounds and device operating condition. In this report, we will review two additional organic spintronic devices, namely organic spin valves (OSVs where only spin polarized holes exist to cause magnetoresistance (MR, and spin organic light emitting diodes (spin-OLEDs where both spin polarized holes and electrons are injected into the organic emissive layer to form a magneto-electroluminescence (MEL hysteretic loop. First, we outline the major advances in OSV studies for understanding the underlying physics of the spin transport mechanism in organic semiconductors (OSCs and the spin injection/detection at the organic/ferromagnet interface (spinterface. We also highlight some of outstanding challenges in this promising research field. Second, the first successful demonstration of spin-OLEDs is reviewed. We also discuss challenges to achieve the high performance devices. Finally, we suggest an outlook on the future of organic spintronics by using organic single crystals and aligned polymers for the spin transport layer, and a self-assembled monolayer to achieve more controllability for the spinterface.

  6. Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

    KAUST Repository

    Li, Peng

    2016-06-01

    In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin-up and spin-down electrons, which has shown great promise for use in different ferromagnetic materials. However, the low spin-filtering efficiency in some materials can be ascribed partially to the difficulty in fabricating high-quality thin film with high Curie temperature and/or partially to the improper model used to extract the spin-filtering efficiency. In this work, a new technique is successfully developed to fabricate high quality, ferrimagnetic insulating γ-Fe2O3 films as spin filter. To extract the spin-filtering effect of γ-Fe2O3 films more accurately, a new model is proposed based on Fowler–Nordheim tunneling and Zeeman effect to obtain the spin polarization of the tunneling currents. Spin polarization of the tunneled current can be as high as −94.3% at 2 K in γ-Fe2O3 layer with 6.5 nm thick, and the spin polarization decays monotonically with temperature. Although the spin-filter effect is not very high at room temperature, this work demonstrates that spinel ferrites are very promising materials for spin injection into semiconductors at low temperature, which is important for development of novel spintronics devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  7. Topological insulator materials and nanostructures for future electronics, spintronics and energy conversion

    International Nuclear Information System (INIS)

    Kantser, Valeriu

    2011-01-01

    Two fundamental electrons attributes in materials and nanostructures - charge and spin - determine their electronic properties. The processing of information in conventional electronic devices is based only on the charge of the electrons. Spin electronics, or spintronics, uses the spin of electrons, as well as their charge, to process information. Metals, semiconductors and insulators are the basic materials that constitute the components of electronic devices, and these have been transforming all aspects of society for over a century. In contrast, magnetic metals, half-metals, magnetic semiconductors, dilute magnetic semiconductors and magnetic insulators are the materials that will form the basis for spintronic devices. Materials with topological band structure attributes and having a zero-energy band gap surface states are a special class of these materials that exhibit some fascinating and superior electronic properties compared to conventional materials allowing to combine both charge and spin functionalities. This article reviews a range of topological insulator materials and nanostructures with tunable surface states, focusing on nanolayered and nanowire like structures. These materials and nanostructures all have intriguing physical properties and numerous potential practical applications in spintronics, electronics, optics and sensors.

  8. Perspective: Ultrafast magnetism and THz spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Walowski, Jakob; Münzenberg, Markus [Institut für Physik, Ernst-Moritz-Arndt-Universität Greifswald, 17489 Greifswald (Germany)

    2016-10-14

    This year the discovery of femtosecond demagnetization by laser pulses is 20 years old. For the first time, this milestone work by Bigot and coworkers gave insight directly into the time scales of microscopic interactions that connect the spin and electron system. While intense discussions in the field were fueled by the complexity of the processes in the past, it now became evident that it is a puzzle of many different parts. Rather than providing an overview that has been presented in previous reviews on ultrafast processes in ferromagnets, this perspective will show that with our current depth of knowledge the first applications are developed: THz spintronics and all-optical spin manipulation are becoming more and more feasible. The aim of this perspective is to point out where we can connect the different puzzle pieces of understanding gathered over 20 years to develop novel applications. Based on many observations in a large number of experiments. Differences in the theoretical models arise from the localized and delocalized nature of ferromagnetism. Transport effects are intrinsically non-local in spintronic devices and at interfaces. We review the need for multiscale modeling to address the processes starting from electronic excitation of the spin system on the picometer length scale and sub-femtosecond time scale, to spin wave generation, and towards the modeling of ultrafast phase transitions that altogether determine the response time of the ferromagnetic system. Today, our current understanding gives rise to the first usage of ultrafast spin physics for ultrafast magnetism control: THz spintronic devices. This makes the field of ultrafast spin-dynamics an emerging topic open for many researchers right now.

  9. Perspective: Ultrafast magnetism and THz spintronics

    International Nuclear Information System (INIS)

    Walowski, Jakob; Münzenberg, Markus

    2016-01-01

    This year the discovery of femtosecond demagnetization by laser pulses is 20 years old. For the first time, this milestone work by Bigot and coworkers gave insight directly into the time scales of microscopic interactions that connect the spin and electron system. While intense discussions in the field were fueled by the complexity of the processes in the past, it now became evident that it is a puzzle of many different parts. Rather than providing an overview that has been presented in previous reviews on ultrafast processes in ferromagnets, this perspective will show that with our current depth of knowledge the first applications are developed: THz spintronics and all-optical spin manipulation are becoming more and more feasible. The aim of this perspective is to point out where we can connect the different puzzle pieces of understanding gathered over 20 years to develop novel applications. Based on many observations in a large number of experiments. Differences in the theoretical models arise from the localized and delocalized nature of ferromagnetism. Transport effects are intrinsically non-local in spintronic devices and at interfaces. We review the need for multiscale modeling to address the processes starting from electronic excitation of the spin system on the picometer length scale and sub-femtosecond time scale, to spin wave generation, and towards the modeling of ultrafast phase transitions that altogether determine the response time of the ferromagnetic system. Today, our current understanding gives rise to the first usage of ultrafast spin physics for ultrafast magnetism control: THz spintronic devices. This makes the field of ultrafast spin-dynamics an emerging topic open for many researchers right now.

  10. Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

    NARCIS (Netherlands)

    Vera Marun, I.J.

    2010-01-01

    This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

  11. Molecular spintronics using single-molecule magnets

    Science.gov (United States)

    Bogani, Lapo; Wernsdorfer, Wolfgang

    2008-03-01

    A revolution in electronics is in view, with the contemporary evolution of the two novel disciplines of spintronics and molecular electronics. A fundamental link between these two fields can be established using molecular magnetic materials and, in particular, single-molecule magnets. Here, we review the first progress in the resulting field, molecular spintronics, which will enable the manipulation of spin and charges in electronic devices containing one or more molecules. We discuss the advantages over more conventional materials, and the potential applications in information storage and processing. We also outline current challenges in the field, and propose convenient schemes to overcome them.

  12. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  13. The first radical-based spintronic memristors: Towards resistive RAMs made of organic magnets

    Science.gov (United States)

    Goss, Karin; Krist, Florian; Seyfferle, Simon; Hoefel, Udo; Paretzki, Alexa; Dressel, Martin; Bogani, Lapo; Institut Fuer Anorganische Chemie, University of Stuttgart Collaboration; 1. Physikalisches Institut, University of Stuttgart Team

    2014-03-01

    Using molecules as building blocks for electronic devices offers ample possibilities for new device functionalities due to a chemical tunability much higher than that of standard inorganic materials, and at the same time offers a decrease in the size of the electronic component down to the single-molecule level. Purely organic molecules containing no metallic centers such as organic radicals can serve as an electronic component with magnetic properties due to the unpaired electron in the radical state. Here we present memristive logic units based on organic radicals of the nitronyl-nitroxide kind. Integrating these purely molecular units as a spin coated layer into crossbar arrays, electrically induced unipolar resistive switching is observed with a change in resistance of up to 100%. We introduce a model based on filamentary reorganization of molecules of different oxidation state revealing the importance of the molecular nature for the switching properties. The major role of the oxidation state of these paramagnetic molecules introduces a magnetic field dependence to the device functionality, which goes along with magnetoresistive charactistics observed for the material. These are the first steps towards a spintronic implementation of organic radicals in electronic devices.

  14. Spintronics

    Indian Academy of Sciences (India)

    we will deal in an elementary fashion with the principles of spintronics. Introduction. Spintronics is the branch of science dealing with the ac- tive manipulation of spin degrees of freedom in solid state materials. .... polarized material can be done in many ways. The sim- plest way is to apply a transient magnetic field to a para-.

  15. Electronic structure and magnetism of new ilmenite compounds for spintronic devices: FeBO{sub 3} (B = Ti, Hf, Zr, Si, Ge, Sn)

    Energy Technology Data Exchange (ETDEWEB)

    Ribeiro, R.A.P. [Department of Chemistry, State University of Ponta Grossa, Av. General Carlos Cavalcanti, 4748, 84030-900 Ponta Grossa, PR (Brazil); Camilo, A. [Department of Physics, State University of Ponta Grossa, Av. General Carlos Cavalcanti, 4748, 84030-900 Ponta Grossa, PR (Brazil); Lazaro, S.R. de, E-mail: srlazaro@uepg.br [Department of Chemistry, State University of Ponta Grossa, Av. General Carlos Cavalcanti, 4748, 84030-900 Ponta Grossa, PR (Brazil)

    2015-11-15

    First-principles calculations were performed in the framework of Density Functional Theory (DFT) within hybrid functional (B3LYP) to study the electronic structure and magnetic properties of new ilmenite FeBO{sub 3} (B=Ti, Hf, Zr, Si, Ge, Sn) materials. In particular, the magnetic exchange interaction between Fe{sup 2+} layers is dependent on the interlayer distance and it can be controlled by ionic radius of B-site cation. Thus, Fe(Ti, Si, Ge)O{sub 3} are antiferromagnetic materials, while Fe(Zr, Hf, Sn)O{sub 3} are ferromagnetic. We also argue that antiferromagnetic materials and FeZrO{sub 3} are convectional semiconductors, whereas FeHfO{sub 3} and FeSnO{sub 3} exhibit intrinsic half-metallic behavior, making them promising candidates for spintronic devices. - Highlights: • We study electronic structure and magnetism of new FeBO{sub 3} (B=Ti, Hf, Zr, Si, Ge, Sn) ilmenite materials. • We found that magnetic ordering of Fe-based ilmenite materials can be controlled by size of B-site cation. • Fe(Ti, Zr, Si, Ge)O{sub 3} are convectional semiconductors. • FeHfO{sub 3} and FeSnO{sub 3} exhibit intrinsic half-metallic behavior with potential application for spintronic devices.

  16. ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS

    KAUST Repository

    Monteblanco, Elmer

    2017-03-14

    Current technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves.

  17. ESPINTRÓNICA, LA ELECTRONICA DEL ESPÍN SPINTRONICS, SPIN ELECTRONICS

    KAUST Repository

    Monteblanco, Elmer; Ortiz Pauyac, Christian; Savero, Williams; RojasSanchez, J. Carlos; Schuhl, A.

    2017-01-01

    Current technology seeks to develop nanoscale devices capable of storing and processing information. These devices would be difficult to make in the area of electronics, which is based on the manipulation of electric charge. However, thanks to advances in experimental and theoretical physics in the field of condensed matter, these devices are already a reality, belonging to the field of what we now call spintronics, which bases its functionality on the control of the electron’s spin, a property that can only be conceived at the quantum level. In this article we review this new perspective, describing giant- and tunneling- magnetoresistance, the spin transfer torque, and their applications such as MRAM memories, nano-oscillators and lateral spin valves.

  18. Advances in graphene spintronics

    Science.gov (United States)

    van Wees, Bart

    I will give an overview of the status of graphene spintronics, from both scientific as technological perspectives. In the introduction I will show that (single) layer graphene is the ideal host for electronic spins, allowing spin transport by diffusion over distances exceeding 20 micrometers at room temperature. I will show how by the use of carrier drift, induced by charge currents, effective spin relaxation lengths of 90 micrometer can be obtained in graphene encapsulated between boron-nitride layers. This also allows the controlled flow and guiding of spin currents, opening new avenues for spin logic devices based on lateral architectures. By preparing graphene on top of a ferromagnetic insulator (yttrium iron garnet (YIG)) we have shown that we can induce an exchange interaction in the graphene, thus effectively making the graphene magnetic. This allows for new ways to induce and control spin precession for new applications. Finally I will show how, by using two-layer BN tunnel barriers, spins can be injected from a ferromagnet into graphene with a spin polarization which can be tuned continuously from -80% to 40%, using a bias range from -0.3V to 0.3V across the barrier. These unique record values of the spin polarization are not yet understood, but they highlight the potential of Van der Waals stacking of graphene and related 2D materials for spintronics.

  19. "Magnon Spintronics"

    Science.gov (United States)

    Yu, Haiming; Xiao, Jiang; Pirro, Philipp

    2018-03-01

    We are proud to present a collection of 12 cutting-edge research articles on the emerging field "magnon spintronics" investigating the properties of spin waves or magnons towards their potential applications in low-power-consumption information technologies. Magnons (quasiparticles of spin waves) are collective excitations of magnetizations in a magnetic system. The concept for such excitations was first introduced 1930 by Felix Bloch [1] who described ferromagnetism in a lattice. The field of magnon spintronics [2] or magnonics [3] aims at utilizing magnons to realize information processing and storage. The propagation of spin waves is free of charge transport, hence a successful realization of magnonic devices can innately avoid Joule heating induced energy loss in nowadays micro- or nano-electronic devices. Magnonics has made many progresses in recent years, including the demonstration of magnonic logic devices [4]. Towards the aim to generate magnonic devices, it is an essential step to find materials suitable for conveying spin waves. One outstanding candidate is a ferromagnetic insulator yttrium iron garnet (YIG). It offers an out standing low damping which allows the propagation of spin waves over relatively long distances. Experiments on such a thin YIG film with an out-of-plane magnetization have been performed by Chen et al. [5]. They excited so called forward volume mode spin waves and determined the propagating spin wave properties, such as the group velocities. Lohman et al. [6] has successfully imaged the propagating spin waves using time-resolved MOKE microscopy and show agreement with micromagnetic modellings. For very long time, YIG is the most ideal material for spin waves thanks to its ultra-low damping. However, it remains a major challenge integrate YIG on to Silicon substrate. Magnetic Heusler alloys on the other hand, can be easily grown on Si substrate and also shows reasonably good damping properties, which allow spin waves to propagate

  20. Antiferromagnetic spintronics

    KAUST Repository

    Baltz, V.

    2018-02-15

    Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and

  1. Antiferromagnetic spintronics

    KAUST Repository

    Baltz, V.; Manchon, Aurelien; Tsoi, M.; Moriyama, T.; Ono, T.; Tserkovnyak, Y.

    2018-01-01

    Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and

  2. Perspectives of antiferromagnetic spintronics

    Science.gov (United States)

    Jungfleisch, Matthias B.; Zhang, Wei; Hoffmann, Axel

    2018-04-01

    Antiferromagnets are promising for future spintronic applications owing to their advantageous properties: They are magnetically ordered, but neighboring magnetic moments point in opposite directions, which results in zero net magnetization. This means antiferromagnets produce no stray fields and are insensitive to external magnetic field perturbations. Furthermore, they show intrinsic high frequency dynamics, exhibit considerable spin-orbit and magneto-transport effects. Over the past decade, it has been realized that antiferromagnets have more to offer than just being utilized as passive components in exchange bias applications. This development resulted in a paradigm shift, which opens the pathway to novel concepts using antiferromagnets for spin-based technologies and applications. This article gives a broad perspective on antiferromagnetic spintronics. In particular, the manipulation and detection of antiferromagnetic states by spintronics effects, as well as spin transport and dynamics in antiferromagnetic materials will be discussed. We will also outline current challenges and future research directions in this emerging field.

  3. Perspectives of antiferromagnetic spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Jungfleisch, Matthias B.; Zhang, Wei; Hoffmann, Axel

    2018-04-01

    Antiferromagnets are promising for future spintronics applications owing to their interesting properties: They are magnetically ordered, but neighboring magnetic moments point in opposite directions which results in zero net magneti- zation. This means antiferromagnets produce no stray fields and are insensitive to external magnetic field perturbations. Furthermore, they show intrinsic high frequency dynamics, exhibit considerable spin-orbit and magneto-transport effects. Over the past decade, it has been realized that antiferromagnets have more to offer than just being utilized as passive components in exchange bias applications. This development resulted in a paradigm shift, which opens the pathway to novel concepts using antiferromagnets for spin-based technologies and applications. This article gives a broad per- spective on antiferromagnetic spintronics. In particular, the manipulation and detection of anitferromagnetic states by spintronics effects, as well as spin transport and dynamics in antiferromagnetic materials will be discussed. We will also outline current challenges and future research directions in this emerging field.

  4. Semiconductors put spin in spintronics

    International Nuclear Information System (INIS)

    Weiss, Dieter

    2000-01-01

    Electrons and holes, which carry the current in semiconductor devices, are quantum-mechanical objects characterized by a set of quantum numbers - the band index, the wave-vector (which is closely related to the electron or hole velocity) and spin. The spin, however, is one of the strangest properties of particles. In simple terms, we can think of the spin as an internal rotation of the electron, but it has no classical counterpart. The spin is connected to a quantized magnetic moment and hence acts as a microscopic magnet. Thus the electron spin can adopt one of two directions (''up'' or ''down'') in a magnetic field. The spin plays no role in conventional electronics and the current in any semiconductor device is made up of a mixture of electrons with randomly oriented spins. However, a new range of electronic devices that transport the spin of the electrons, in addition to their charge, is being developed. But the biggest obstacle to making practical ''spin electronic'' or ''spintronic'' devices so far has been finding a way of injecting spin-polarized electrons or holes into the semiconductor and then detecting them. Recently a team of physicists from the University of Wuerzburg in Germany, and also a collaboration of researchers from Tohoku University in Japan and the University of California at Santa Barbara, have found a way round these problems using either semi-magnetic or ferromagnetic semiconductors as ''spin aligners'' (R Fiederling et al. 1999 Nature 402 787; Y Ohno et al. 1999 Nature 402 790). In this article the author presents the latest breakthrough in spintronics research. (UK)

  5. Organic spintronics

    International Nuclear Information System (INIS)

    Naber, W J M; Faez, S; Wiel, W G van der

    2007-01-01

    We review the emerging field of organic spintronics, where organic materials are applied as a medium to transport and control spin-polarized signals. The contacts for injecting and detecting spins are formed by ferromagnetic metals, oxides, or inorganic semiconductors. First, the basic concepts of spintronics and organic electronics are addressed, and phenomena which are in particular relevant for organic spintronics are highlighted. Experiments using different organic materials, including carbon nanotubes, organic thin films, self-assembled monolayers and single molecules are then reviewed. Observed magnetoresistance points toward successful spin injection and detection, but spurious magnetoresistance effects can easily be confused with spin accumulation. A few studies report long spin relaxation times and lengths, which forms a promising basis for further research. We conclude with discussing outstanding questions and problems. (topical review)

  6. The importance of Fe interface states for ferromagnet-semiconductor based spintronic devices

    Science.gov (United States)

    Chantis, Athanasios

    2009-03-01

    I present our recent theoretical studies of the bias-controlled spin injection, detection sensitivity and tunneling anisotropic magnetoresistance in ferromagnetic-semiconductor tunnel junctions. Using first-principles electron transport methods we have shown that Fe 3d minority-spin surface (interface) states are responsible for at least two important effects for spin electronics. First, they can produce a sizable Tunneling Anisotropic Magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, Tunneling Magnetoresistance junctions with a single ferromagnetic electrode that can function at room temperatures. Second, in Fe/GaAs(001) magnetic tunnel junctions they produce a strong dependence of the tunneling current spin-polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is found. This explains the observed sign reversal of spin-polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistcance through vertical Fe/GaAs/Fe trilayers. We also present a theoretical description of electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically different from that of the tunneling current spin-polarization. We show that in realistic ferromagnet/semiconductor junctions this bias dependence can originate from two distinct physical mechanisms: 1) the bias dependence of tunneling current spin-polarization, which is of microscopic origin and depends on the specific properties of the interface, and 2) the macroscopic electron spin transport properties in the semiconductor. Our numerical results show that the magnitude of the voltage signal

  7. Neuromorphic computing with nanoscale spintronic oscillators.

    Science.gov (United States)

    Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu; Tsunegi, Sumito; Khalsa, Guru; Querlioz, Damien; Bortolotti, Paolo; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Stiles, Mark D; Grollier, Julie

    2017-07-26

    Neurons in the brain behave as nonlinear oscillators, which develop rhythmic activity and interact to process information. Taking inspiration from this behaviour to realize high-density, low-power neuromorphic computing will require very large numbers of nanoscale nonlinear oscillators. A simple estimation indicates that to fit 10 8 oscillators organized in a two-dimensional array inside a chip the size of a thumb, the lateral dimension of each oscillator must be smaller than one micrometre. However, nanoscale devices tend to be noisy and to lack the stability that is required to process data in a reliable way. For this reason, despite multiple theoretical proposals and several candidates, including memristive and superconducting oscillators, a proof of concept of neuromorphic computing using nanoscale oscillators has yet to be demonstrated. Here we show experimentally that a nanoscale spintronic oscillator (a magnetic tunnel junction) can be used to achieve spoken-digit recognition with an accuracy similar to that of state-of-the-art neural networks. We also determine the regime of magnetization dynamics that leads to the greatest performance. These results, combined with the ability of the spintronic oscillators to interact with each other, and their long lifetime and low energy consumption, open up a path to fast, parallel, on-chip computation based on networks of oscillators.

  8. Giant magnetoresistance in lateral metallic nanostructures for spintronic applications.

    Science.gov (United States)

    Zahnd, G; Vila, L; Pham, V T; Marty, A; Beigné, C; Vergnaud, C; Attané, J P

    2017-08-25

    In this letter, we discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. Using CoFe-based all-metallic LSVs, we show that giant magnetoresistance variations of more than 10% can be obtained, competitive with the current-perpendicular-to-plane giant magnetoresistance. We then focus on the interest of being able to tailor freely the geometries. On the one hand, by tailoring the non-magnetic parts, we show that it is possible to enhance the spin signal of giant magnetoresistance structures. On the other hand, we show that tailoring the geometry of lateral structures allows creating a multilevel memory with high spin signals, by controlling the coercivity and shape anisotropy of the magnetic parts. Furthermore, we study a new device in which the magnetization direction of a nanodisk can be detected. We thus show that the ability to control the magnetic properties can be used to take advantage of all the spin degrees of freedom, which are usually occulted in current-perpendicular-to-plane devices. This flexibility of lateral structures relatively to current-perpendicular-to-plane structures is thus found to offer a new playground for the development of spintronic applications.

  9. Spintronics: The molecular way

    Science.gov (United States)

    Cornia, Andrea; Seneor, Pierre

    2017-05-01

    Molecular spintronics is an interdisciplinary field at the interface between organic spintronics, molecular magnetism, molecular electronics and quantum computing, which is advancing fast and promises large technological payoffs.

  10. Damping constant measurement and inverse giant magnetoresistance in spintronic devices with Fe4N

    Directory of Open Access Journals (Sweden)

    Xuan Li

    2017-12-01

    Full Text Available Fe4N is one of the attractive materials for spintronic devices due to its large spin asymmetric conductance and negative spin polarization at the Fermi level. We have successfully deposited Fe4N thin film with (001 out-of-plane orientation using a DC facing-target-sputtering system. A Fe(001/Ag(001 composite buffer layer is selected to improve the (001 orientation of the Fe4N thin film. The N2 partial pressure during sputtering is optimized to promote the formation of Fe4N phase. Moreover, we have measured the ferromagnetic resonance (FMR of the (001 oriented Fe4N thin film using coplanar waveguides and microwave excitation. The resonant fields are tested under different microwave excitation frequencies, and the experimental results match well with the Kittel formula. The Gilbert damping constant of Fe4N is determined to be α = 0.021±0.02. We have also fabricated and characterized the current-perpendicular-to-plane (CPP giant magnetoresistance (GMR device with Fe4N/Ag/Fe sandwich. Inverse giant magnetoresistance is observed in the CPP GMR device, which suggests that the spin polarization of Fe4N and Fe4N/Ag interface is negative.

  11. Antiferromagnetic spintronics

    Science.gov (United States)

    Baltz, V.; Manchon, A.; Tsoi, M.; Moriyama, T.; Ono, T.; Tserkovnyak, Y.

    2018-01-01

    Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

  12. Recent Advance in Organic Spintronics and Magnetic Field Effect

    Science.gov (United States)

    Valy Vardeny, Z.

    2013-03-01

    In this talk several important advances in the field of Organic Spintronics and magnetic field effect (MFE) of organic films and optoelectronic devices that have occurred during the past two years from the Utah group will be surveyed and discussed. (i) Organic Spintronics: We demonstrated spin organic light emitting diode (spin-OLED) using two FM injecting electrodes, where the electroluminescence depends on the mutual orientation of the electrode magnetization directions. This development has opened up research studies into organic spin-valves (OSV) in the space-charge limited current regime. (ii) Magnetic field effect: We demonstrated that the photoinduced absorption spectrum in organic films (where current is not involved) show pronounced MFE. This unravels the underlying mechanism of the MFE in organic devices, to be more in agreement with the field of MFE in Biochemistry. (iii) Spin effects in organic optoelectronic devices: We demonstrated that certain spin 1/2 radical additives to donor-acceptor blends substantially enhance the power conversion efficiency of organic photovoltaic (OPV) solar cells. This effect shows that studies of spin response and MFE in OPV devices are promising. In collaboration with T. Nguyen, E. Ehrenfreund, B. Gautam, Y. Zhang and T. Basel. Supported by the DOE grant 04ER46109 ; NSF Grant # DMR-1104495 and MSF-MRSEC program DMR-1121252 [2,3].

  13. Synthesis and characterization of transition-metal-doped zinc oxide nanocrystals for spintronics

    Science.gov (United States)

    Wang, Xuefeng

    Spintronics (spin transport electr onics), in which both spin and charge of carriers are utilized for information processing, is believed to challenge the current microelectronics and to become the next-generation electronics. Nanostructured spintronic materials and their synthetic methodologies are of paramount importance for manufacturing future nanoscale spintronic devices. This thesis aims at studying synthesis, characterization, and magnetism of transition-metal-doped zinc oxide (ZnO) nanocrystals---a diluted magnetic semiconductor (DMS)---for potential applications in future nano-spintronics. A simple bottom-up-based synthetic strategy named a solvothermal technique is introduced as the primary synthetic approach and its crystal growth mechanism is scrutinized. N-type cobalt-doped ZnO-based DMS nanocrystals are employed as a model system, and characterized by a broad spectrum of advanced microscopic and spectroscopic techniques. It is found that the self-orientation growth mechanism, imperfect oriented attachment, is intimately correlated with the high-temperature ferromagnetism via defects. The influence of processing on the magnetic properties, such as compositional variations, reaction conditions, and post-growth treatment, is also studied. In this way, an in-depth understanding of processing-structure-property interrelationships and origins of magnetism in DMS nanocrystals are obtained in light of the theoretical framework of a spin-split impurity band model. In addition, a nanoscale spinodal decomposition phase model is also briefly discussed. Following the similar synthetic route, copper- and manganese-doped ZnO nanocrystals have been synthesized and characterized. They both show high-temperature ferromagnetism in line with the aforementioned theoretical model(s). Moreover, they display interesting exchange biasing phenomena at low temperatures, revealing the complexity of magnetic phases therein. The crystal growth strategy demonstrated in this work

  14. Special Heusler compounds for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Balke, B.

    2007-07-01

    This work emphasizes the potential of Heusler compounds in a wide range of spintronic applications. Using electronic structure calculations it is possible to design compounds for specific applications. Examples for GMR and TMR applications, for spin injection into semiconductors, and for spin torque transfer applications will be shown. After a detailed introduction about spintronics and related materials chapter 5 reports about the investigation of new half-metallic compounds where the Fermi energy is tuned in the middle of the gap to result in more stable compounds for GMR and TMR applications. The bulk properties of the quaternary Heusler alloy Co{sub 2}Mn{sub 1-x}Fe{sub x}Si with the Fe concentration ranging from x=0 to 1 are reported and the results suggest that the best candidate for applications may be found at an iron concentration of about 50%. Due to the effect that in the Co{sub 2}Mn{sub 1-x}Fe{sub x}Si series the transition metal carrying the localized moment is exchanged and this might lead to unexpected effects on the magnetic properties if the samples are not completely homogeneous chapter 6 reports about the optimization of the Heusler compounds for GMR and TMR applications. The structural and magnetic properties of the quaternary Heusler alloy Co{sub 2}FeAl{sub 1-x}Si{sub x} with varying Si concentration are reported. From the combination of experimental (better order for high Si content) and theoretical findings (robust gap at x=0.5) it is concluded that a compound with an intermediate Si concentration close to x=0.5-0.7 would be best suited for spintronic applications, especially for GMR and TMR applications. In chapter 7 the detailed investigation of compounds for spin injection into semiconductors is reported. It is shown that the diluted magnetic semiconductors based on CoTiSb with a very low lattice mismatch among each other are interesting materials for spintronics applications like Spin-LEDs or other spin injection devices. Chapter 8 refers

  15. Cr-doped III-V nitrides: Potential candidates for spintronics

    KAUST Repository

    Amin, Bin

    2011-02-19

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

  16. Cr-doped III-V nitrides: Potential candidates for spintronics

    KAUST Repository

    Amin, Bin; Arif, Suneela K.; Ahmad, Iftikhar; Maqbool, Muhammad; Ahmad, Roshan; Goumri-Said, Souraya; Prisbrey, Keith A.

    2011-01-01

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

  17. Rare earth-based quaternary Heusler compounds MCoVZ (M = Lu, Y; Z = Si, Ge with tunable band characteristics for potential spintronic applications

    Directory of Open Access Journals (Sweden)

    Xiaotian Wang

    2017-11-01

    Full Text Available Magnetic Heusler compounds (MHCs have recently attracted great attention since these types of material provide novel functionalities in spintronic and magneto-electronic devices. Among the MHCs, some compounds have been predicted to be spin-filter semiconductors [also called magnetic semiconductors (MSs], spin-gapless semiconductors (SGSs or half-metals (HMs. In this work, by means of first-principles calculations, it is demonstrated that rare earth-based equiatomic quaternary Heusler (EQH compounds with the formula MCoVZ (M = Lu, Y; Z = Si, Ge are new spin-filter semiconductors with total magnetic moments of 3 µB. Furthermore, under uniform strain, there are physical transitions from spin-filter semiconductor (MS → SGS → HM for EQH compounds with the formula LuCoVZ, and from HM → SGS → MS → SGS → HM for EQH compounds with the formula YCoVZ. Remarkably, for YCoVZ EQH compounds there are not only diverse physical transitions, but also different types of spin-gapless feature that can be observed with changing lattice constants. The structural stability of these four EQH compounds is also examined from the points of view of formation energy, cohesive energy and mechanical behaviour. This work is likely to inspire consideration of rare earth-based EQH compounds for application in future spintronic and magneto-electronic devices.

  18. Topological Material-Based Spin Devices

    Science.gov (United States)

    Zhang, Minhao; Wang, Xuefeng

    Three-dimensional topological insulators have insulating bulk and gapless helical surface states. One of the most fascinating properties of the metallic surface states is the spin-momentum helical locking. The giant current-driven torques on the magnetic layer have been discovered in TI/ferromagnet bilayers originating from the spin-momentum helical locking, enabling the efficient magnetization switching with a low current density. We demonstrated the current-direction dependent on-off state in TIs-based spin valve devices for memory and logic applications. Further, we demonstrated the Bi2Se3 system will go from a topologically nontrivial state to a topologically trivial state when Bi atoms are replaced by lighter In atoms. Here, topologically trivial metal (BixIny)2 Se3 with high mobility also facilitates the realization of its application in multifunctional spintronic devices.

  19. Integration of spintronic interface for nanomagnetic arrays

    Directory of Open Access Journals (Sweden)

    Andrew Lyle

    2011-12-01

    Full Text Available An experimental demonstration utilizing a spintronic input/output (I/O interface for arrays of closely spaced nanomagnets is presented. The free layers of magnetic tunnel junctions (MTJs form dipole coupled nanomagnet arrays which can be applied to different contexts including Magnetic Quantum Cellular Automata (MQCA for logic applications and self-biased devices for field sensing applications. Dipole coupled nanomagnet arrays demonstrate adaptability to a variety of contexts due to the ability for tuning of magnetic response. Spintronics allows individual nanomagnets to be manipulated with spin transfer torque and monitored with magnetoresistance. This facilitates measurement of the magnetic coupling which is important for (yet to be demonstrated data propagation reliability studies. In addition, the same magnetic coupling can be tuned to reduce coercivity for field sensing. Dipole coupled nanomagnet arrays have the potential to be thousands of times more energy efficient than CMOS technology for logic applications, and they also have the potential to form multi-axis field sensors.

  20. Nanomagnetism and spintronics

    CERN Document Server

    Shinjo, Teruya

    2014-01-01

    The concise and accessible chapters of Nanomagnetism and Spintronics, Second Edition, cover the most recent research in areas of spin-current generation, spin-calorimetric effect, voltage effects on magnetic properties, spin-injection phenomena, giant magnetoresistance (GMR), and tunnel magnetoresistance (TMR). Spintronics is a cutting-edge area in the field of magnetism that studies the interplay of magnetism and transport phenomena, demonstrating how electrons not only have charge but also spin. This second edition provides the background to understand this novel physical phenomeno

  1. Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

    Energy Technology Data Exchange (ETDEWEB)

    Tomasello, R. [Department of Computer Science, Modeling, Electronics and System Science, University of Calabria, Rende (CS) (Italy); Carpentieri, M., E-mail: m.carpentieri@poliba.it [Department of Electrical and Information Engineering, Politecnico of Bari, via E. Orabona 4, I-70125 Bari (Italy); Finocchio, G. [Department of Electronic Engineering, Industrial Chemistry and Engineering, University of Messina, C.da di Dio, I-98166 Messina (Italy)

    2013-12-16

    This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed.

  2. Dynamical properties of three terminal magnetic tunnel junctions: Spintronics meets spin-orbitronics

    International Nuclear Information System (INIS)

    Tomasello, R.; Carpentieri, M.; Finocchio, G.

    2013-01-01

    This Letter introduces a micromagnetic model able to characterize the magnetization dynamics in three terminal magnetic tunnel junctions, where the effects of spin-transfer torque and spin-orbit torque are taken into account. Our results predict that the possibility to separate electrically those two torque sources is very promising from a technological point of view for both next generation of nanoscale spintronic oscillators and microwave detectors. A scalable synchronization scheme based on the parallel connection of those three terminal devices is also proposed

  3. Ultrathin Epitaxial Ferromagneticγ-Fe2O3Layer as High Efficiency Spin Filtering Materials for Spintronics Device Based on Semiconductors

    KAUST Repository

    Li, Peng; Xia, Chuan; Zhu, Zhiyong; Wen, Yan; Zhang, Qiang; Alshareef, Husam N.; Zhang, Xixiang

    2016-01-01

    In spintronics, identifying an effective technique for generating spin-polarized current has fundamental importance. The spin-filtering effect across a ferromagnetic insulating layer originates from unequal tunneling barrier heights for spin

  4. Prospects of asymmetrically H-terminated zigzag germanene nanoribbons for spintronic application

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Varun, E-mail: varun@iiitm.ac.in [Nanomaterials Research Group, ABV-Indian Institute of Information Technology and Management (IIITM), Gwalior 474015 (India); Srivastava, Pankaj [Nanomaterials Research Group, ABV-Indian Institute of Information Technology and Management (IIITM), Gwalior 474015 (India); Jaiswal, Neeraj K. [Discipline of Physics, Indian Institute of Information Technology, Design & Manufacturing, Jabalpur, Dumna Airport Road, Jabalpur 482005 (India)

    2017-02-28

    Highlights: • Asymmetric hydrogen termination of Zigzag Germanene Nanoribbons (ZGeNR) is presented with their plausible spintronic device application. • It is revealed that asymmetric terminations are energetically more favourable compared to symmetric terminations. • The magnetic moment analysis depicts that asymmetric ZGeNR have a magnetic ground state with a preferred ferromagnetic (FM) coupling. • Presented doped asymmetric ZGeNR exhibits a half-metallic character which makes them qualify for spin-filtering device. - Abstract: First-principles investigations have been performed to explore the spin based electronic and transport properties of asymmetrically H-terminated zigzag germanene nanoribbons (2H−H ZGeNR). Investigations reveal a significant formation energy difference (ΔE{sub F} = E{sub F(2H-H)} − E{sub F(H-H)} ∼ −0.49 eV), highlighting more energetic stability for asymmetric edge termination compared to symmetric edge termination, irrespective of the ribbon width. Further, magnetic moment analysis and total energy calculations were performed to unveil that these structures have a magnetic ground state with preferred ferromagnetic (FM) coupling. The calculated E-k structures project a unique bipolar semiconducting behaviour for 2H−H ZGeNR which is contrast to H-terminated ZGeNR. Half-metallic transformation has also been revealed via suitable p-type or n-type doping for these structures. Finally, transport calculations were performed to highlight the selective contributions of spin-down (spin-up) electrons in the I–V characteristics of the doped 2H−H ZGeNR, suggesting their vitality for spintronic device applications.

  5. Electric field-induced magnetoresistance in spin-valve/piezoelectric multiferroic laminates for low-power spintronics

    International Nuclear Information System (INIS)

    Huong Giang, D.T.; Thuc, V.N.; Duc, N.H.

    2012-01-01

    Electric field-induced magnetic anisotropy has been realized in the spin-valve-based {Ni 80 Fe 20 /Cu/Fe 50 Co 50 /IrMn}/piezoelectric multiferroic laminates. In this system, electric-field control of magnetization is accomplished by strain mediated magnetoelectric coupling. Practically, the magnetization in the magnetostrictive FeCo layer of the spin-valve structure rotates under an effective compressive stress caused by the inverse piezoelectric effect in external electrical fields. This phenomenon is evidenced by the magnetization and magnetoresistance changes under the electrical field applied across the piezoelectric layer. The result shows great potential for advanced low-power spintronic devices. - Highlights: ► Investigate electric field-induced magnetic anisotropy in spin-valve/piezoelectric. ► Magnetization, magnetoresistance changes under electric field across piezoelectric. ► Magnetization in magnetostrictive FeCo-layer rotates under a compressive stress. ► This advance shows great implications for low-power electronics and spintronics.

  6. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

    Science.gov (United States)

    Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

    2016-11-23

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

  7. Multi-parameter optimization of a nanomagnetic system for spintronic applications

    International Nuclear Information System (INIS)

    Morales Meza, Mishel; Zubieta Rico, Pablo F.; Horley, Paul P.; Sukhov, Alexander; Vieira, Vítor R.

    2014-01-01

    Magnetic properties of nano-particles feature many interesting physical phenomena that are essentially important for the creation of a new generation of spin-electronic devices. The magnetic stability of the nano-particles can be improved by formation of ordered particle arrays, which should be optimized over several parameters. Here we report successful optimization regarding inter-particle distance and applied field frequency allowing to obtain about three-times reduction of coercivity of a particle array compared to that of a single particle, which opens new perspectives for development of new spintronic devices

  8. Multi-parameter optimization of a nanomagnetic system for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Morales Meza, Mishel [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Zubieta Rico, Pablo F. [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Centro de Investigación y de Estudios Avanzados del IPN (CINVESTAV) Querétaro, Libramiento Norponiente 2000, Fracc. Real de Juriquilla, 76230 Querétaro (Mexico); Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Sukhov, Alexander [Institut für Physik, Martin-Luther Universität Halle-Wittenberg, 06120 Halle (Saale) (Germany); Vieira, Vítor R. [Centro de Física das Interacções Fundamentais (CFIF), Instituto Superior Técnico, Universidade Técnica de Lisboa, Avenida Rovisco Pais, 1049-001 Lisbon (Portugal)

    2014-11-15

    Magnetic properties of nano-particles feature many interesting physical phenomena that are essentially important for the creation of a new generation of spin-electronic devices. The magnetic stability of the nano-particles can be improved by formation of ordered particle arrays, which should be optimized over several parameters. Here we report successful optimization regarding inter-particle distance and applied field frequency allowing to obtain about three-times reduction of coercivity of a particle array compared to that of a single particle, which opens new perspectives for development of new spintronic devices.

  9. Heterojunction metal-oxide-metal Au-Fe{sub 3}O{sub 4}-Au single nanowire device for spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, K. M., E-mail: mrkongara@boisestate.edu; Punnoose, Alex; Hanna, Charles [Department of Physics, Boise State University, Boise, Idaho 83725 (United States); Padture, Nitin P. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2015-05-07

    In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe{sub 3}O{sub 4} interfaces as confirmed by the transmission electron microscopy. Magnetic measurements revealed Verwey transition shoulder around 120 K and a room temperature coercive field of 90 Oe. Current–voltage (I-V) characteristics of a single Au-Fe{sub 3}O{sub 4}-Au nanowire have exhibited Ohmic behavior. Anomalous positive magnetoresistance of about 0.5% is observed on a single nanowire, which is attributed to the high spin polarization in nanowire device with pure Fe{sub 3}O{sub 4} phase and nanocontact barrier. This work demonstrates the ability to preserve the pristine Fe{sub 3}O{sub 4} and well defined electrode contact metal (Au)–magnetite interface, which helps in attaining high spin polarized current.

  10. A review on organic spintronic materials and devices: I. Magnetic field effect on organic light emitting diodes

    Directory of Open Access Journals (Sweden)

    Rugang Geng

    2016-06-01

    Full Text Available Organic spintronics is an emerging and potential platform for future electronics and display due to the intriguing properties of organic semiconductors (OSCs. For the past decade, studies have focused on three types of organic spintronic phenomena: (i magnetic field effect (MFE in organic light emitting diodes (OLEDs, where spin mixing between singlet and triplet polaron pairs (PP can be influenced by an external magnetic field leading to organic magnetoresistive effect (OMAR; (ii magnetoresistance (MR in organic spin valves (OSVs, where spin injection, transport, manipulation, and detection have been demonstrated; and (iii magnetoelectroluminescence (MEL bipolar OSVs or spin-OLEDs, where spin polarized electrons and holes are simultaneously injected into the OSC layer, leading to the dependence of electroluminescence intensity on relative magnetization of the electrodes. In this first of two review papers, we present major experimental results on OMAR studies and current understanding of OMAR using several spin dependent processes in organic semiconductors. During the discussion, we highlight some of the outstanding challenges in this promising research field. Finally, we provide an outlook on the future of organic spintronics.

  11. Spin-chemistry concepts for spintronics scientists

    Directory of Open Access Journals (Sweden)

    Konstantin L. Ivanov

    2017-07-01

    Full Text Available Spin chemistry and spintronics developed independently and with different terminology. Until now, the interaction between the two fields has been very limited. In this review, we compile the two “languages” in an effort to enhance communication. We expect that knowledge of spin chemistry will accelerate progress in spintronics.

  12. Tunneling anisotropic magnetoresistance in C60-based organic spintronic systems

    NARCIS (Netherlands)

    Wang, Kai; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2014-01-01

    C 60 fullerenes are interesting molecular semiconductors for spintronics since they exhibit weak spin-orbit and hyperfine interactions, which is a prerequisite for long spin lifetimes. We report spin-polarized transport in spin-valve-like structures containing ultrathin (<10 nm) C 60 layers,

  13. Antiferromagnetic spintronics

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Martí, Xavier; Wadley, P.; Wunderlich, Joerg

    2016-01-01

    Roč. 11, č. 3 (2016), 231-241 ISSN 1748-3387 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : antiferromagnets * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 38.986, year: 2016

  14. Large-scale fabrication of BN tunnel barriers for graphene spintronics

    International Nuclear Information System (INIS)

    Fu, Wangyang; Makk, Péter; Maurand, Romain; Bräuninger, Matthias; Schönenberger, Christian

    2014-01-01

    We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by Hexagonal boron nitride, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of ∼260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials

  15. Materials for spintronic: Room temperature ferromagnetism in Zn-Mn-O interfaces

    International Nuclear Information System (INIS)

    Quesada, A.; Garcia, M.A.; Crespo, P.; Hernando, A.

    2006-01-01

    In this paper we study the room temperature ferromagnetism reported on Mn-doped ZnO and ascribed to spin polarization of conduction electrons. We experimentally show that the ferromagnetic behaviour is associated to the coexistence of Mn 3+ and Mn +4 in MnO 2 grains where diffusion of Zn promotes the Mn 4+→ Mn 3+ reduction. Potential uses of this material in spintronic devices are analysed

  16. Room-temperature spintronic effects in Alq3-based hybrid devices

    NARCIS (Netherlands)

    Dediu, V.; Hueso, L.E.; Bergenti, I; Riminucci, A.; Borgatti, F.; Graziosi, P.; Newby, C.; Casoli, F.; de Jong, Machiel Pieter; Taliani, C.; Zhan, Y.

    2008-01-01

    We report on efficient spin polarized injection and transport in long 102 nm channels of Alq3 organic semiconductor. We employ vertical spin valve devices with a direct interface between the bottom manganite electrode and Alq3, while the top-electrode geometry consists of an insulating tunnel

  17. Spintronics and thermoelectrics in exfoliated and epitaxial graphene

    NARCIS (Netherlands)

    van den Berg, Jan Jasper

    2016-01-01

    This thesis is about two subjects: graphene spintronics and graphene thermoelectrics. Spintronics is about the creation and manipulation of spin currents. These are electrical currents in which we can control the spin orientation (up or down) of the conduction electrons. The second subject,

  18. Flexible spintronic devices on Kapton

    DEFF Research Database (Denmark)

    Bedoya-Pinto, Amilcar; Donolato, Marco; Gobbi, Marco

    2014-01-01

    Magnetic tunnel junctions and nano-sized domain-wall conduits have been fabricated on the flexible substrate Kapton. Despite the delicate nature of tunneling barriers and zig-zag shaped nanowires, the devices show an outstanding integrity and robustness upon mechanical bending. High values of ben...

  19. Ferromagnetism in doped or undoped spintronics nanomaterials

    Science.gov (United States)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  20. Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications

    Science.gov (United States)

    Nie, Tianxiao; Tang, Jianshi; Wang, Kang L.

    2015-09-01

    In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1-x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.

  1. Group IV all-semiconductor spintronics. Materials aspects and optical spin selection rules

    Energy Technology Data Exchange (ETDEWEB)

    Sircar, Narayan

    2012-04-03

    In the scope of the present thesis various aspects for the realization of spintronic applications based on group IV semiconductors are discussed. This work comprises a refined material characterization of the magnetic semiconductor GeMn. We furthermore present efforts to utilize this material as spin injector for a Si-based optical spintronic device. Applying transmission electron microscopy and atom probe tomography, we are able to resolve a vertical anisotropy in the self-assembly, leading to the stacking of well-defined clusters in the growth direction. Three-dimensional atom distribution maps confirm that clusters are built from a nonstoichiometric GeMn alloy and exhibit a high-Mn-concentration core with a decreasing Mn concentration toward a shell. An amorphous nature of the cluster cores as well as the crystallinity of the shells, coherent with the surrounding Ge lattice, are revealed in scanning transmission electron microscopy. We localize a strain field surrounding each GeMn cluster by scanning transmission electron microscopy. The importance of strain to the stacking phenomenon of the clusters becomes clear in studies of Ge/GeMn superlattice structures, where a vertical spatial correlation of clusters over 30 nm-thick Ge spacer layers is observed. We present evidence that electrical transport properties of the p-type GeMn thin films fabricated on high-resistivity Ge substrates are severely influenced by parallel conduction through the substrate. It is shown that substrate conduction persists also for wellconducting degenerate p-type reference thin films, giving rise to an effective two-layer conduction scheme. GeMn thin films fabricated on these substrates exhibit only a negligible magnetoresistance effect. Before integrating GeMn in an optical spintronic device, some key aspects important for an understanding of the optical injection and detection of carrier spins in Si and Si-based heterostructures are clarified in the second part of this thesis. In

  2. Surface spintronics enhanced photo-catalytic hydrogen evolution: Mechanisms, strategies, challenges and future

    Science.gov (United States)

    Zhang, Wenyan; Gao, Wei; Zhang, Xuqiang; Li, Zhen; Lu, Gongxuan

    2018-03-01

    Hydrogen is a green energy carrier with high enthalpy and zero environmental pollution emission characteristics. Photocatalytic hydrogen evolution (HER) is a sustainable and promising way to generate hydrogen. Despite of great achievements in photocatalytic HER research, its efficiency is still limited due to undesirable electron transfer loss, high HER over-potential and low stability of some photocatalysts, which lead to their unsatisfied performance in HER and anti-photocorrosion properties. In recent years, many spintronics works have shown their enhancing effects on photo-catalytic HER. For example, it was reported that spin polarized photo-electrons could result in higher photocurrents and HER turn-over frequency (up to 200%) in photocatalytic system. Two strategies have been developed for electron spin polarizing, which resort to heavy atom effect and magnetic induction respectively. Both theoretical and experimental studies show that controlling spin state of OHrad radicals in photocatalytic reaction can not only decrease OER over-potential (even to 0 eV) of water splitting, but improve stability and charge lifetime of photocatalysts. A convenient strategy have been developed for aligning spin state of OHrad by utilizing chiral molecules to spin filter photo-electrons. By chiral-induced spin filtering, electron polarization can approach to 74%, which is significantly larger than some traditional transition metal devices. Those achievements demonstrate bright future of spintronics in enhancing photocatalytic HER, nevertheless, there is little work systematically reviewing and analysis this topic. This review focuses on recent achievements of spintronics in photocatalytic HER study, and systematically summarizes the related mechanisms and important strategies proposed. Besides, the challenges and developing trends of spintronics enhanced photo-catalytic HER research are discussed, expecting to comprehend and explore such interdisciplinary research in

  3. Molecular engineering with artificial atoms: designing a material platform for scalable quantum spintronics and photonics

    Science.gov (United States)

    Doty, Matthew F.; Ma, Xiangyu; Zide, Joshua M. O.; Bryant, Garnett W.

    2017-09-01

    Self-assembled InAs Quantum Dots (QDs) are often called "artificial atoms" and have long been of interest as components of quantum photonic and spintronic devices. Although there has been substantial progress in demonstrating optical control of both single spins confined to a single QD and entanglement between two separated QDs, the path toward scalable quantum photonic devices based on spins remains challenging. Quantum Dot Molecules, which consist of two closely-spaced InAs QDs, have unique properties that can be engineered with the solid state analog of molecular engineering in which the composition, size, and location of both the QDs and the intervening barrier are controlled during growth. Moreover, applied electric, magnetic, and optical fields can be used to modulate, in situ, both the spin and optical properties of the molecular states. We describe how the unique photonic properties of engineered Quantum Dot Molecules can be leveraged to overcome long-standing challenges to the creation of scalable quantum devices that manipulate single spins via photonics.

  4. Spintronics of antiferromagnetic systems

    International Nuclear Information System (INIS)

    Gomonaj, E.V.; Loktev, V.M.

    2014-01-01

    Spintronics of antiferromagnetics is a new field that has developed in a fascinating research topic in physics of magnetism. Antiferromagnetics, like ferromagnetic materials experience the influence of spin-polarized current, even though they show no macroscopic magnetization. The mechanism of this phenomenon is related to spin-dependent interaction between free and localized electrons-sd-exchange. Due to the peculiarities of antiferromagnetic materials (complicated magnetic structure, essential role of the exchange interactions, lack of macroscopic magnetization) spintronics of antiferromagnets appeals to new theoretical and experimental approaches. The purpose of this review is to systemize and summarize the recent progress in this field. We start with a short introduction into the structure and dynamics of antiferromagnets and proceed with discussion of different microscopic and phenomenological theories for description of current-induced phenomena in ferro-/antiferromagnetic heterostructures. We also consider the problems of the reverse influence of antiferromagnetic ordering on current, and effectiveness of the fully antiferromagnetic spin valve. In addition, we shortly review and interpret the available experimental results.

  5. Quantum computing and spintronics

    International Nuclear Information System (INIS)

    Kantser, V.

    2007-01-01

    Tentative to build a computer, which can operate according to the quantum laws, has leaded to concept of quantum computing algorithms and hardware. In this review we highlight recent developments which point the way to quantum computing on the basis solid state nanostructures after some general considerations concerning quantum information science and introducing a set of basic requirements for any quantum computer proposal. One of the major direction of research on the way to quantum computing is to exploit the spin (in addition to the orbital) degree of freedom of the electron, giving birth to the field of spintronics. We address some semiconductor approach based on spin orbit coupling in semiconductor nanostructures. (authors)

  6. Simulation of a spintronic transistor: A study of its performance

    International Nuclear Information System (INIS)

    Pela, R.R.; Teles, L.K.

    2009-01-01

    We study theoretically the magnetic bipolar transistor, and compare its performance with common bipolar transistor. We present not only the simulation results for the characteristic curves, but also other relevant parameters related with its performance, such as: the current amplification factor, the open-loop gain, the hybrid parameters and the cutoff frequency. We noted that the spin-charge coupling introduces new phenomena that enrich the functionality characteristics of the magnetic bipolar transistor. Among other things, it has an adjustable band structure, which may be modified during the device operation; it exhibits the already known spin-voltaic effect. On the other hand, we observed that it is necessary a large g-factor to analyze the influence of the field B over the transistor. Nevertheless, we consider the magnetic bipolar transistor as a promising device for spintronic applications

  7. Prospect for antiferromagnetic spintronics

    Czech Academy of Sciences Publication Activity Database

    Martí, Xavier; Fina, I.; Jungwirth, Tomáš

    2015-01-01

    Roč. 51, č. 4 (2015), s. 2900104 ISSN 0018-9464 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spintronics * antiferromagnets Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.277, year: 2015

  8. Concepts of antiferromagnetic spintronics

    Czech Academy of Sciences Publication Activity Database

    Gomonay, O.; Jungwirth, Tomáš; Sinova, Jairo

    2017-01-01

    Roč. 11, č. 4 (2017), 1-8, č. článku 1700022. ISSN 1862-6254 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G Institutional support: RVO:68378271 Keywords : spintronics * antiferromagnets Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.032, year: 2016

  9. Preparation and characterization of highly L21-ordered full-Heusler alloy Co2FeAl0.5Si0.5 thin films for spintronics device applications

    International Nuclear Information System (INIS)

    Wang Wenhong; Sukegawa, Hiroaki; Shan Rong; Furubayashi, Takao; Inomata, Koichiro

    2008-01-01

    We report the investigation of structure and magnetic properties of full-Heusler alloy Co 2 FeAl 0.5 Si 0.5 (CFAS) thin films grown on MgO-buffered MgO (001) substrates through magnetron sputtering. It was found that single-crystal CFAS thin films with high degree of L2 1 ordering and sufficiently flat surface could be obtained after postdeposition annealing. All the films show a distinct uniaxial magnetic anisotropy with the easy axis of magnetization along the in-plane [110] direction. These results indicate that the use of the MgO buffer for CFAS is a promising approach for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications

  10. Half metallic ferromagnet Pr_0_._9_5Mn_0_._9_3_9O_3 for spin based devices

    International Nuclear Information System (INIS)

    Santhosh Kumar, B.; Praveen Shankar, N.; Venkateswaran, C.; Manimuthu, P.

    2016-01-01

    Half Metallic Ferromagnets (HMF) are excellent candidates for spintronics devices due to their unusual 3d and 4s bands. Band theory and first principles calculations strongly predict that Pr based compounds are promising HMF candidates due to their spin hybridisation. Among all Pr based HMF, Pr_0_._9_5Mn_0_._9_3_9O_3 is special because of its pervoskite structure. The different oxidation states of Mn and Pr will enhance the hybridisation of 3d and 4f bands. The present study is experimental effort on the preparation of Pr based compounds

  11. Flexible spin-orbit torque devices

    Energy Technology Data Exchange (ETDEWEB)

    Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Salahuddin, Sayeef [Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2015-12-21

    We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10{sup 6} successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging.

  12. Flexible spin-orbit torque devices

    International Nuclear Information System (INIS)

    Lee, OukJae; You, Long; Jang, Jaewon; Subramanian, Vivek; Salahuddin, Sayeef

    2015-01-01

    We report on state-of-the-art spintronic devices synthesized and fabricated directly on a flexible organic substrate. Large perpendicular magnetic anisotropy was achieved in ultrathin ferromagnetic heterostructures of Pt/Co/MgO sputtered on a non-rigid plastic substrate at room temperature. Subsequently, a full magnetic reversal of the Co was observed by exploiting the spin orbit coupling in Pt that leads to a spin accumulation at the Pt/Co interface when an in-plane current is applied. Quasi-static measurements show the potential for operating these devices at nano-second speeds. Importantly, the behavior of the devices remained unchanged under varying bending conditions (up to a bending radius of ≈ ±20–30 mm). Furthermore, the devices showed robust operation even after application of 10 6 successive pulses, which is likely sufficient for many flexible applications. Thus, this work demonstrates the potential for integrating high performance spintronic devices on flexible substrates, which could lead to many applications ranging from flexible non-volatile magnetic memory to local magnetic resonance imaging

  13. On the path toward organic spintronics

    NARCIS (Netherlands)

    Moodera, J.S.; Koopmans, B.; Oppeneer, P.M.

    2014-01-01

    Organic materials provide a unique platform for exploiting the spin of the electron—a field dubbed organic spintronics. Originally, this was mostly motivated by the notion that because of weak spin-orbit coupling, due to the small mass elements in organics and small hyperfine field coupling, organic

  14. LSMO - growing opportunities by PLD and applications in spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Cesaria, M; Caricato, A P; Maruccio, G; Martino, M, E-mail: maura.cesaria@le.infn.it [Physics Department, University of Salento, Via Arnesano, 73100, Lecce (Italy)

    2011-04-01

    Ferromagnetic materials exhibiting at room temperature combination of good conductivity, magnetic and opto-electronic properties are needed for the development of functional spin-devices. Mixed-valence LSMO is an optimal source of fully spin-polarized carriers and shows a rich physics of magnetic phases and transport mechanisms. Many factors, such as growth temperature, oxygen stoichiometry, temperature-dependent oxygen desorption rate, structural matching between the growing film and substrate, film thickness, and defects, influence the LSMO properties. Stabilization of ferromagnetic and conductive behaviours is linked to structural order. Therefore a growth approach allowing congruent deposition of complex materials under controlled, reproducible and tunable conditions is strongly needed. In this respect pulsed laser deposition reveals a well-suited choice. This review aims to give an overview on LSMO thin film properties, deposition and applications, especially in the emerging organic spintronics.

  15. From Spintronics to CFD/ContractForDifferences

    Science.gov (United States)

    Maksoed, W. H.

    2015-11-01

    Involve the CFD/Computational Fluid Dynamics & HCCI/Homogeneous Charge Compression Ignition - Marcine Frackowiak, dissertation, 2009, for CFD/Contract For Differences accompanied by ``One Man's Crusade to Exonerate Hydrogen for Hindenburg Disaster'' of Addison BAIN, APS News, v. 9, n.7 (July 2000) concludes ``ignition of the blaze'' are responsible to those May, 1937 Accidents. Spintronics their selves include active control & manipulation of spin degree of freedom ever denotes: the nano-obelisk of scanning electron microscopy of galliumnitride/GaN nanostructures-Yong-Hon Cho et al.:``Novel Photonic Device using core-shell nanostructures'', SPIE-newsroom,10.1117/2.1201503.005864. Herewith commercial activated carbon/C can be imaged directly using abberation-corrected transmission electron microscopy[PJF Harris et al.: ``Imaging the Atomic Structures of activated C'', J. Phys. Condens. Matt, 20 (2008) in fig b & c- images networks of hexagonal rings can be clearly be seen depicts equal etchings of 340 px Akhenaten, Nefertiti & their childrens. Incredible acknowledgments to Minister of Education & Culture RI 1998-1999 HE. Mr. Prof. Ir. WIRANTO ARISMUNANDAR, MSME.

  16. Nanospintronics: when spintronics meets single electron physics

    International Nuclear Information System (INIS)

    Seneor, Pierre; Bernand-Mantel, Anne; Petroff, Frederic

    2007-01-01

    As spintronics goes nano, new phenomena are predicted resulting from the interplay between spin dependent transport and single electron physics. The long term goal of manipulating spins one by one would open a promising path to quantum computing. Towards this end, there is an ever-growing effort to connect spin tanks (i.e. ferromagnetic leads) to smaller and smaller objects in order to study spintronics in reduced dimensions. As the dimensions are reduced, spin dependent transport is predicted to interplay with quantum and/or single electron charging effects. We review experiments and theories on the interplay between Coulomb blockade and spin properties (namely magneto-Coulomb effects) in structures where a single nano-object is connected to ferromagnetic leads. We then discuss briefly future directions in the emerging field of nanospintronics towards quantum dots, carbon nanotubes and single molecule magnets

  17. The Spin Torque Lego - from spin torque nano-devices to advanced computing architectures

    Science.gov (United States)

    Grollier, Julie

    2013-03-01

    Spin transfer torque (STT), predicted in 1996, and first observed around 2000, brought spintronic devices to the realm of active elements. A whole class of new devices, based on the combined effects of STT for writing and Giant Magneto-Resistance or Tunnel Magneto-Resistance for reading has emerged. The second generation of MRAMs, based on spin torque writing : the STT-RAM, is under industrial development and should be out on the market in three years. But spin torque devices are not limited to binary memories. We will rapidly present how the spin torque effect also allows to implement non-linear nano-oscillators, spin-wave emitters, controlled stochastic devices and microwave nano-detectors. What is extremely interesting is that all these functionalities can be obtained using the same materials, the exact same stack, simply by changing the device geometry and its bias conditions. So these different devices can be seen as Lego bricks, each brick with its own functionality. During this talk, I will show how spin torque can be engineered to build new bricks, such as the Spintronic Memristor, an artificial magnetic nano-synapse. I will then give hints on how to assemble these bricks in order to build novel types of computing architectures, with a special focus on neuromorphic circuits. Financial support by the European Research Council Starting Grant NanoBrain (ERC 2010 Stg 259068) is acknowledged.

  18. Comment on The Rise of Semiconductor Spintronics

    OpenAIRE

    Korenev, Vladimir L.

    2009-01-01

    I argue that most of the key experiments that have born semiconductor spintronics were done and published earlier than the papers cited in the Nature Physics, 4 S20 (2008) milestone article (http://www.nature.com/milestones/spin, milestone 23).

  19. Effect of external magnetic field on locking range of spintronic feedback nano oscillator

    Science.gov (United States)

    Singh, Hanuman; Konishi, K.; Bose, A.; Bhuktare, S.; Miwa, S.; Fukushima, A.; Yakushiji, K.; Yuasa, S.; Kubota, H.; Suzuki, Y.; Tulapurkar, A. A.

    2018-05-01

    In this work we have studied the effect of external applied magnetic field on the locking range of spintronic feedback nano oscillator. Injection locking of spintronic feedback nano oscillator at integer and fractional multiple of its auto oscillation frequency was demonstrated recently. Here we show that the locking range increases with increasing external magnetic field. We also show synchronization of spintronic feedback nano oscillator at integer (n=1,2,3) multiples of auto oscillation frequency and side band peaks at higher external magnetic field values. We have verified experimental results with macro-spin simulation using similar conditions as used for the experimental study.

  20. Spintronic effects in metallic, semiconductor, metal-oxide and metal-semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bratkovsky, A M [Hewlett-Packard Laboratories, 1501 Page Mill Road, MS 1123, Palo Alto, CA 94304 (United States)

    2008-02-15

    Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field.

  1. Spintronic effects in metallic, semiconductor, metal-oxide and metal-semiconductor heterostructures

    International Nuclear Information System (INIS)

    Bratkovsky, A M

    2008-01-01

    Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field

  2. Spintronic effects in metallic, semiconductor, metal oxide and metal semiconductor heterostructures

    Science.gov (United States)

    Bratkovsky, A. M.

    2008-02-01

    Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These include tunnel and giant magnetoresistance, spin-torque and spin-orbit effects on electron transport in various heterostructures. We give a microscopic description of spin tunneling through oxide and modified Schottky barriers between a ferromagnet (FM) and a semiconductor (S). It is shown that in such FM-S junctions electrons with a certain spin projection can be efficiently injected into (or extracted from) S, while electrons with the opposite spin can accumulate in S near the interface. The criterion for efficient injection is opposite to a known Rashba criterion, since the barrier should be rather transparent. In degenerate semiconductors, extraction of spin can proceed at low temperatures. We mention a few novel spin-valve ultrafast devices with small dissipated power: a magnetic sensor, a spin transistor, an amplifier, a frequency multiplier, a square-law detector and a source of polarized radiation. We also discuss effects related to spin-orbital interactions, such as the spin Hall effect (SHE) and a recently predicted positive magnetoresistance accompanying SHE. Some esoteric devices such as 'spinFET', interacting spin logic and spin-based quantum computing are discussed and problems with their realization are highlighted. We demonstrate that the so-called 'ferroelectric tunnel junctions' are unlikely to provide additional functionality because in all realistic situations the ferroelectric barrier would be split into domains by the depolarizing field.

  3. Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

    Science.gov (United States)

    Dahal, Bishnu R.

    The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics

  4. Effect of external magnetic field on locking range of spintronic feedback nano oscillator

    Directory of Open Access Journals (Sweden)

    Hanuman Singh

    2018-05-01

    Full Text Available In this work we have studied the effect of external applied magnetic field on the locking range of spintronic feedback nano oscillator. Injection locking of spintronic feedback nano oscillator at integer and fractional multiple of its auto oscillation frequency was demonstrated recently. Here we show that the locking range increases with increasing external magnetic field. We also show synchronization of spintronic feedback nano oscillator at integer (n=1,2,3 multiples of auto oscillation frequency and side band peaks at higher external magnetic field values. We have verified experimental results with macro-spin simulation using similar conditions as used for the experimental study.

  5. All-spin logic operations: Memory device and reconfigurable computing

    Science.gov (United States)

    Patra, Moumita; Maiti, Santanu K.

    2018-02-01

    Exploiting spin degree of freedom of electron a new proposal is given to characterize spin-based logical operations using a quantum interferometer that can be utilized as a programmable spin logic device (PSLD). The ON and OFF states of both inputs and outputs are described by spin state only, circumventing spin-to-charge conversion at every stage as often used in conventional devices with the inclusion of extra hardware that can eventually diminish the efficiency. All possible logic functions can be engineered from a single device without redesigning the circuit which certainly offers the opportunities of designing new generation spintronic devices. Moreover, we also discuss the utilization of the present model as a memory device and suitable computing operations with proposed experimental setups.

  6. Piezo Voltage Controlled Planar Hall Effect Devices.

    Science.gov (United States)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  7. Spin-dependent transport and functional design in organic ferromagnetic devices

    Directory of Open Access Journals (Sweden)

    Guichao Hu

    2017-09-01

    Full Text Available Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.

  8. Integrated Spintronic Platforms for Biomolecular Recognition Detection

    Science.gov (United States)

    Martins, V. C.; Cardoso, F. A.; Loureiro, J.; Mercier, M.; Germano, J.; Cardoso, S.; Ferreira, R.; Fonseca, L. P.; Sousa, L.; Piedade, M. S.; Freitas, P. P.

    2008-06-01

    This paper covers recent developments in magnetoresistive based biochip platforms fabricated at INESC-MN, and their application to the detection and quantification of pathogenic waterborn microorganisms in water samples for human consumption. Such platforms are intended to give response to the increasing concern related to microbial contaminated water sources. The presented results concern the development of biological active DNA chips and protein chips and the demonstration of the detection capability of the present platforms. Two platforms are described, one including spintronic sensors only (spin-valve based or magnetic tunnel junction based), and the other, a fully scalable platform where each probe site consists of a MTJ in series with a thin film diode (TFD). Two microfluidic systems are described, for cell separation and concentration, and finally, the read out and control integrated electronics are described, allowing the realization of bioassays with a portable point of care unit. The present platforms already allow the detection of complementary biomolecular target recognition with 1 pM concentration.

  9. Spintronic microfluidic platform for biomedical and environmental applications

    Science.gov (United States)

    Cardoso, F. A.; Martins, V. C.; Fonseca, L. P.; Germano, J.; Sousa, L. A.; Piedade, M. S.; Freitas, P. P.

    2010-09-01

    Faster, more sensitive and easy to operate biosensing devices still are a need at important areas such as biomedical diagnostics, food control and environmental monitoring. Recently, spintronic-devices have emerged as a promising alternative to the existent technologies [1-3]. A number of advantages, namely high sensitivity, easy integration, miniaturization, scalability, robustness and low cost make these devices potentially capable of responding to the existent technological need. In parallel, the field of microfluidics has shown great advances [4]. Microfluidic systems allow the analysis of small sample volumes (from micro- down to pico-liters), often by automate sample processing with the ability to integrate several steps into a single device (analyte amplification, concentration, separation and/or labeling), all in a reduced assay time (minutes to hours) and affordable cost. The merging of these two technologies, magnetoresistive biochips and microfluidics, will enable the development of highly competitive devices. This work reports the integration of a magnetoresistive biochip with a microfluidic system inside a portable and autonomous electronic platform aiming for a fully integrated device. A microfluidic structure fabricated in polydimethylsiloxane with dimensions of W: 0.5mm, H: 0.1mm, L: 10mm, associated to a mechanical system to align and seal the channel by pressure is presented (Fig. 1) [5]. The goal is to perform sample loading and transportation over the chip and simultaneously control the stringency and uniformity of the wash-out process. The biochip output is acquired by an electronic microsystem incorporating the circuitry to control, address and read-out the 30 spin-valve sensors sequentially (Fig. 1) [2]. This platform is being applied to the detection of water-borne microbial pathogens (e.g. Salmonella and Escherichia coli) and genetic diseases diagnosis (e.g. cystic fibrosis) through DNA hybridization assays. Open chamber measurements were

  10. Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

    International Nuclear Information System (INIS)

    Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

    2014-01-01

    Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ≈500 ps and spin diffusion length ≈1.6 μm in graphene with tunnel spin polarization ≈11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies

  11. Progress in Group III nitride semiconductor electronic devices

    International Nuclear Information System (INIS)

    Hao Yue; Zhang Jinfeng; Shen Bo; Liu Xinyu

    2012-01-01

    Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal—oxide—semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources. (invited papers)

  12. Spin-Valve Effect in a Ni-C60-Ni Device

    National Research Council Canada - National Science Library

    He, Haiying; Pandey, Ravindra; Karna, Shashi P

    2006-01-01

    .... The magnitude of the junction magnetoresistance (JMR) is found to be significantly large for the device, which makes it a promising candidate for realistic applications in molecular spintronics...

  13. Spintronics with metals: Current perpendicular-to-the-plane magneto-transport studies

    Science.gov (United States)

    Sharma, Amit

    In this thesis, we present studies to produce new information about three topics: current perpendicular to the plane magnetoresistance (CPP-MR), spin transfer torque (STT), and antiferromagnetic spintronics. Large values of CPP-MR interface parameters---specific interface resistance (Area times resistance), 2AR*, and scattering asymmetry, gamma---are desirable for the use of CPP-MR in devices. Stimulated by a nanopillar study by the Cornell Group, we first discovered that Py/Al had an unusually large 2AR*, but a small gamma. In the hope of finding metal pairs with large values of both the interface parameters, the Py/Al studies led us to study the following interfaces: (a) F/Al with F: Py (= Ni84Fe16). Co, Fe, Co91Fe9, and (b) F/N: Py/Pd, Fe/V, Fe/Nb and Co/Pt. None of the metal pairs looks better for CPP-MR devices. The Cornell group also found that bracketing Al with thin Cu in Py/Al/Py nanopillars, gave an MR similar to Py/Al/Py rather than to Py/Cu/Py. To try to understand this result, we studied the effect of Cu/Al/Cu spacers on ADeltaR = AR(AP) - AR(P) of Py exchange biased spin valves (EBSVs). Here AR(AP) and AR(P) are the specific resistances in the anti-parallel (AP) and parallel (P) configurations of the F layers. Intriguingly, fixing the Al thickness tAl = 10 nm and varying tCu has no effect on ADeltaR, but fixing tCu = 10 nm and varying t Al significantly affected ADeltaR. These unusual behaviors are probably due to strong Al and Cu intermixing, with probable formation of some fraction of ordered alloys. Recent calculations predicted that 2AR of Al/Ag interfaces would vary substantially with orientation and with alloying. The latter is a special potential problem, because Al and Ag interdiffuse at room temperature. To compare with the calculations, we determined 2AR of sputtered Al/Ag interfaces with (111) orientation. Our estimate agrees with calculations that assume 4 monolayers of interfacial disorder, consistent with modest intermixing. To aid in

  14. Equiatomic quaternary Heusler alloys: A material perspective for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Bainsla, Lakhan, E-mail: lakhanbainsla@gmail.com, E-mail: suresh@phy.iitb.ac.in; Suresh, K. G., E-mail: lakhanbainsla@gmail.com, E-mail: suresh@phy.iitb.ac.in [Magnetic Materials Lab, Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2016-09-15

    Half-metallic ferromagnetic (HMF) materials show high spin polarization and are therefore interesting to researchers due to their possible applications in spintronic devices. In these materials, while one spin sub band has a finite density of states at the Fermi level, the other sub band has a gap. Because of their high Curie temperature (T{sub C}) and tunable electronic structure, HMF Heusler alloys have a special importance among the HMF materials. Full Heusler alloys with the stoichiometric composition X{sub 2}YZ (where X and Y are the transition metals and Z is a sp element) have the cubic L2{sub 1} structure with four interpenetrating fcc sublattices. When each of these four fcc sublattices is occupied by different atoms (XX′YZ), a quaternary Heusler structure with different structural symmetries (space group F-43m, #216) is obtained. Recently, these equiatomic quaternary Heusler alloys (EQHAs) with 1:1:1:1 stoichiometry have attracted a lot of attention due to their superior magnetic and transport properties. A special class of HMF materials identified recently is known as spin gapless semiconductors (SGS). The difference in this case, compared with HMFs, is that the density of states for one spin band is just zero at the Fermi level, while the other has a gap as in the case of HMFs. Some of the reported SGS materials belong to EQHAs family. This review is dedicated to almost all reported materials belonging to EQHAs family. The electronic structure and hence the physical properties of Heusler alloys strongly depend on the degree of structural order and distribution of the atoms in the crystal lattice. A variety of experimental techniques has been used to probe the structural parameters and degree of order in these alloys. Their magnetic properties have been investigated using the conventional methods, while the spin polarization has been probed by point contact Andreev reflection technique. The experimentally obtained values of saturation magnetization are

  15. Magnon spintronics in non-collinear magnetic insulator/metal heterostructures

    NARCIS (Netherlands)

    Aqeel, Aisha

    2017-01-01

    The research presented in this thesis focuses on the growth of complex magnetic materials with unique magnetic properties and experimental investigation of fundamental spintronics phenomena in these magnetic insulators with magnetic orders varying from collinear to noncollinear chiral spin

  16. A Low-Power High-Speed Spintronics-Based Neuromorphic Computing System Using Real Time Tracking Method

    DEFF Research Database (Denmark)

    Farkhani, Hooman; Tohidi, Mohammad; Farkhani, Sadaf

    2018-01-01

    In spintronic-based neuromorphic computing systems (NCS), the switching of magnetic moment in a magnetic tunnel junction (MTJ) is used to mimic neuron firing. However, the stochastic switching behavior of the MTJ and process variations effect lead to a significant increase in stimulation time...... of such NCSs. Moreover, current NCSs need an extra phase to read the MTJ state after stimulation which is in contrast with real neuron functionality in human body. In this paper, the read circuit is replaced with a proposed real-time sensing (RTS) circuit. The RTS circuit tracks the MTJ state during...... stimulation phase. As soon as switching happens, the RTS circuit terminates the MTJ current and stimulates the post neuron. Hence, the RTS circuit not only improves the energy consumption and speed, but also makes the operation of NCS similar to real neuron functionality. The simulation results in 65-nm CMOS...

  17. Spacer type mediated tunable spin crossover (SCO) characteristics of pyrene decorated 2,6-bis(pyrazol-1-yl)pyridine (bpp) based Fe(ii) molecular spintronic modules.

    Science.gov (United States)

    Kumar, Kuppusamy Senthil; Šalitroš, Ivan; Moreno-Pineda, Eufemio; Ruben, Mario

    2017-08-14

    A simple "isomer-like" variation of the spacer group in a set of Fe(ii) spin crossover (SCO) complexes designed to probe spin state dependence of electrical conductivity in graphene-based molecular spintronic junctions led to the observation of remarkable variations in the thermal- and light-induced magnetic characteristics, paving a simple route for the design of functional SCO complexes with different temperature switching regimes based on a 2,6-bis(pyrazol-1-yl)pyridine ligand skeleton.

  18. Spintronic Circuits: The Building Blocks of Spin-Based Computation

    Directory of Open Access Journals (Sweden)

    Roshan Warman

    2016-10-01

    Full Text Available In the most general situation, binary computation is implemented by means of microscopic logical gates known as transistors. According to Moore’s Law, the size of transistors will half every two years, and as these transistors reach their fundamental size limit, the quantum effects of the electrons passing through the transistors will be observed. Due to the inherent randomness of these quantum fluctuations, the basic binary logic will become uncontrollable. This project describes the basic principle governing quantum spin-based computing devices, which may provide an alternative to the conventional solid-state computing devices and circumvent the technological limitations of the current implementation of binary logic.

  19. Theory of superconducting spintronic SIsFS devices

    International Nuclear Information System (INIS)

    Bakurskiy, S.V.; Klenov, N.V.; Soloviev, I.I.; Kupriyanov, M.Yu.; Bol'ginov, V.V.; Ryazanov, V.V.; Vernik, I.V.; Mukhanov, O.A.; Golubov, A.A.

    2013-01-01

    Full text: Motivated by recent progress in developments of cryogenic memory compatible with single flux quantum (SFQ) circuits we have performed a theoretical study of magnetic SIsFS Josephson junctions, where 'S' is a bulk superconductor, 's' is a thin superconducting film, 'F' is a metallic ferromagnet and 'I' is an insulator. We calculate the Josephson current as a function of s and F layers thickness, temperature and exchange energy of F film. We outline several modes of operation of these junctions and demonstrate their unique ability to have high I C R N product in the π-state, comparable to that in SIS tunnel junctions commonly used in SFQ circuits. We develop a model describing switching of the Josephson critical current in these devices by external magnetic field. The results are in good agreement with the experimental data for Nb-Al/AlOx-Nb-Pd0:99Fe0:01-Nb junctions. This work is supported by RFBR No. 12-02-90010-Bel a .

  20. Hybrid Spintronic Structures With Magnetic Oxides and Heusler Alloys

    DEFF Research Database (Denmark)

    Xu, Y. B.; Hassan, S. S. A.; Wong, P. K. J.

    2008-01-01

    Hybrid spintronic structures, integrating half-metallic magnetic oxides and Heusler alloys with their predicted high spin polarization, are important for the development of second-generation spintronics with high-efficient spin injection. We have synthesized epitaxial magnetic oxide Fe3O4 on Ga......As(100) and the unit cell of the Fe3O4 was found to be rotated by 45 degrees to match the gallium arsenide GaAs. The films were found to have a bulk-like moment down to 3-4 nm and a low coercivity indicating a high-quality magnetic interface. The magnetization hysteresis loops of the ultrathin films...... are controlled by uniaxial magnetic anisotropy. The dynamic response of the sample shows a heavily damped precessional response to the applied field pulses. In the Heusler alloy system of Co-2 MnGa on GaAs, we found that the magnetic moment was reduced for thicknesses down to 10 nm, which may account...

  1. Multi-channel spintronic transistor design based on magnetoelectric barriers and spin-orbital effects

    International Nuclear Information System (INIS)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-01-01

    We present a spin transistor design based on spin-orbital interactions in a two-dimensional electron gas, with magnetic barriers induced by a patterned ferromagnetic gate. The proposed device overcomes certain shortcomings of previous spin transistor designs such as long device length and degradation of conductance modulation for multi-channel transport. The robustness of our device for multi-channel transport is unique in spin transistor designs based on spin-orbit coupling. The device is more practical in fabrication and experimental respects compared to previously conceived single-mode spin transistors

  2. Magnetization Dynamics in Two Novel Current-Driven Spintronic Memory Cell Structures

    KAUST Repository

    Velazquez-Rizo, Martin

    2017-07-01

    In this work, two new spintronic memory cell structures are proposed. The first cell uses the diffusion of polarized spins into ferromagnets with perpendicular anisotropy to tilt their magnetization followed by their dipolar coupling to a fixed magnet (Bhowmik et al., 2014). The possibility of setting the magnetization to both stable magnetization states in a controlled manner using a similar concept remains unknown, but the proposed structure poses to be a solution to this difficulty. The second cell proposed takes advantage of the multiple stable magnetic states that exist in ferromagnets with configurational anisotropy and also uses spin torques to manipulate its magnetization. It utilizes a square-shaped ferromagnet whose stable magnetization has preferred directions along the diagonals of the square, giving four stable magnetic states allowing to use the structure as a multi-bit memory cell. Both devices use spin currents generated in heavy metals by the Spin Hall effect present in these materials. Among the advantages of the structures proposed are their inherent non-volatility and the fact that there is no need for applying external magnetic fields during their operation, which drastically improves the energy efficiency of the devices. Computational simulations using the Object Oriented Micromagnetic Framework (OOMMF) software package were performed to study the dynamics of the magnetization process in both structures and predict their behavior. Besides, we fabricated a 4-terminal memory cell with configurational anisotropy similar to the device proposed, and found four stable resistive states on the structure, proving the feasibility of this technology for implementation of high-density, non-volatile memory cells.

  3. Novel spintronics devices for memory and logic: prospects and challenges for room temperature all spin computing

    Science.gov (United States)

    Wang, Jian-Ping

    An energy efficient memory and logic device for the post-CMOS era has been the goal of a variety of research fields. The limits of scaling, which we expect to reach by the year 2025, demand that future advances in computational power will not be realized from ever-shrinking device sizes, but rather by innovative designs and new materials and physics. Magnetoresistive based devices have been a promising candidate for future integrated magnetic computation because of its unique non-volatility and functionalities. The application of perpendicular magnetic anisotropy for potential STT-RAM application was demonstrated and later has been intensively investigated by both academia and industry groups, but there is no clear path way how scaling will eventually work for both memory and logic applications. One of main reasons is that there is no demonstrated material stack candidate that could lead to a scaling scheme down to sub 10 nm. Another challenge for the usage of magnetoresistive based devices for logic application is its available switching speed and writing energy. Although a good progress has been made to demonstrate the fast switching of a thermally stable magnetic tunnel junction (MTJ) down to 165 ps, it is still several times slower than its CMOS counterpart. In this talk, I will review the recent progress by my research group and my C-SPIN colleagues, then discuss the opportunities, challenges and some potential path ways for magnetoresitive based devices for memory and logic applications and their integration for room temperature all spin computing system.

  4. Magnetic polyoxometalates: from molecular magnetism to molecular spintronics and quantum computing.

    Science.gov (United States)

    Clemente-Juan, Juan M; Coronado, Eugenio; Gaita-Ariño, Alejandro

    2012-11-21

    In this review we discuss the relevance of polyoxometalate (POM) chemistry to provide model objects in molecular magnetism. We present several potential applications in nanomagnetism, in particular, in molecular spintronics and quantum computing.

  5. Introduction to spintronics

    CERN Document Server

    Bandyopadhyay, Supriyo

    2008-01-01

    The Early History of Spin Spin The Bohr Planetary Model and Space Quantization The Birth of "Spin" The Stern-Gerlach Experiment The Advent of Spintronics The Quantum Mechanics of Spin Pauli Spin Matrices The Pauli Equation and Spinors More on the Pauli Equation Extending the Pauli Equation - the Dirac Equation The Time Independent Dirac Equation Appendix The Bloch Sphere The Spinor and the "Qubit" The Bloch Sphere Concept Evolution of a Spinor Spin-1/2 Particle in a Constant Magnetic Field: Larmor Precession Preparing to Derive the Rabi Formula The Rabi Formula The Density Matrix The Density Matrix Concept: Case of a Pure State Properties of the Density Matrix Pure Versus Mixed State Concept of the Bloch Ball Time Evolution of the Density Matrix: Case of Mixed State The Relaxation Times T1 and T2 and the Bloch Equations Spin Orbit Interaction Spin Orbit Interaction in a Solid Magneto-Electric Sub-Bands in Quantum Confined Structures in the Presence of Spin-Orbit Interaction Dispersion Relations of Spin Resolv...

  6. Magnetization Dynamics in Two Novel Current-Driven Spintronic Memory Cell Structures

    KAUST Repository

    Velazquez-Rizo, Martin

    2017-01-01

    In this work, two new spintronic memory cell structures are proposed. The first cell uses the diffusion of polarized spins into ferromagnets with perpendicular anisotropy to tilt their magnetization followed by their dipolar coupling to a fixed

  7. Single atom spintronics

    International Nuclear Information System (INIS)

    Sullivan, M. R.; Armstrong, J. N.; Hua, S. Z.; Chopra, H. D.

    2005-01-01

    Full text: Single atom spintronics (SASS) represents the ultimate physical limit in device miniaturization. SASS is characterized by ballistic electron transport, and is a fertile ground for exploring new phenomena. In addition to the 'stationary' (field independent) scattering centers that have a small and fixed contribution to total transmission probability of electron waves, domain walls constitute an additional and enhanced source of scattering in these magnetic quantum point contacts (QPCs), the latter being both field and spin-dependent. Through the measurement of complete hysteresis loops as a function of quantized conductance, we present definitive evidence of enhanced backscattering of electron waves by atomically sharp domain walls in QPCs formed between microfabricated thin films [1]. Since domain walls move in a magnetic field, the magnitude of spin-dependent scattering changes as the QPC is cycled along its hysteresis loop. For example, as shown in the inset in Fig. 1, from zero towards saturation in a given field direction, the resistance varies as the wall is being swept away, whereas the resistance is constant upon returning from saturation towards zero, since in this segment of the hysteresis loop no domain wall is present across the contact. The observed spin-valve like behavior is realized by control over wall width and shape anisotropy. This behavior also unmistakably sets itself apart from any mechanical artifacts; additionally, measurements made on single atom contacts provide an artifact-free environment [2]. Intuitively, it is simpler to organize the observed BMR data according to all possible transitions between different conductance plateaus, as shown by the dotted line in Fig. 1; the solid circles show experimental data for Co, which follows the predicted scheme. Requisite elements for the observation of the effect will be discussed in detail along with a review of state of research in this field. Practically, the challenge lies in making

  8. Spintronic and transport properties of linear atomic strings of transition metals (Fe, Co, Ni)

    Energy Technology Data Exchange (ETDEWEB)

    Tyagi, Neha, E-mail: nehatyagi.phy@gmail.com [Department of Applied Physics, Delhi Technological University, New Delhi (India); Jaiswal, Neeraj K. [Discipline of Physics, PDPM-Indian Institute of Information Technology, Design & Manufacturing, Jabalpur (India); Srivastava, Pankaj [Nanomaterials Research Group, ABV-Indian Institute of Information Technology & Management, Gwalior (India)

    2016-05-06

    In the present work, first-principles investigations have been performed to study the spintronic and transport properties of linear atomic strings of Fe, Co and Ni. The structural stabilities of the considered strings were compared on the basis of binding energies which revealed that all the strings are energetically feasible to be achieved. Further, all the considered strings are found to be ferromagnetic and the observed magnetic moment ranges from 1.38 to 1.71 μ{sub B}. The observed transport properties and high spin polarization points towards their potential for nano interconnects and spintronic applications.

  9. Efficient spin-filtering, magnetoresistance and negative differential resistance effects of a one-dimensional single-molecule magnet Mn(dmit2-based device with graphene nanoribbon electrodes

    Directory of Open Access Journals (Sweden)

    N. Liu

    2017-12-01

    Full Text Available We present first-principle spin-dependent quantum transport calculations in a molecular device constructed by one single-molecule magnet Mn(dmit2 and two graphene nanoribbon electrodes. Our results show that the device could generate perfect spin-filtering performance in a certain bias range both in the parallel configuration (PC and the antiparallel configuration (APC. At the same time, a magnetoresistance effect, up to a high value of 103%, can be realized. Moreover, visible negative differential resistance phenomenon is obtained for the spin-up current of the PC. These results suggest that our one-dimensional molecular device is a promising candidate for multi-functional spintronics devices.

  10. Challenges and opportunities with spin-based logic

    Science.gov (United States)

    Perricone, Robert; Niemier, Michael; Hu, X. Sharon

    2017-09-01

    In this paper, we provide a short overview of efforts to process information with spin as a state variable. We highlight initial efforts in spintronics where devices concepts such as spinwaves, field coupled nanomagnets, etc. were are considered as vehicles for processing information. We also highlight more recent work where spintronic logic and memory devices are considered in the context of information processing hardware for the internet of things (IoT), and where the ability to constantly "checkpoint" processor state can support computing in environments with unreliable power supplies.

  11. Efficient Spin Injection into Semiconductor

    International Nuclear Information System (INIS)

    Nahid, M.A.I.

    2010-06-01

    Spintronic research has made tremendous progress nowadays for making future devices obtain extra advantages of low power, and faster and higher scalability compared to present electronic devices. A spintronic device is based on the transport of an electron's spin instead of charge. Efficient spin injection is one of the very important requirements for future spintronic devices. However, the effective spin injection is an exceedingly difficult task. In this paper, the importance of spin injection, basics of spin current and the essential requirements of spin injection are illustrated. The experimental technique of electrical spin injection into semiconductor is also discussed based on the experimental experience. The electrical spin injection can easily be implemented for spin injection into any semiconductor. (author)

  12. Spin transport and spin torque in antiferromagnetic devices

    Science.gov (United States)

    Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

    2018-03-01

    Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

  13. Prediction of novel interface-driven spintronic effects

    International Nuclear Information System (INIS)

    Bhattacharjee, Satadeep; Singh, Surendra; Bellaiche, L; Wang, D; Viret, M

    2014-01-01

    The recently proposed coupling between the angular momentum density and magnetic moment (Raeliarijaona et al 2013 Phys. Rev. Lett. 110 137205) is shown here to result in the prediction of (i) novel spin currents generated by an electrical current and (ii) new electrical currents induced by a spin current in systems possessing specific interfaces between two different materials. Some of these spin (electrical) currents can be reversed near the interface by reversing the applied electrical (spin) current. Similarities and differences between these novel spintronic effects and the well-known spin Hall and inverse spin Hall effects are also discussed. (paper)

  14. Challenges for single molecule electronic devices with nanographene and organic molecules. Do single molecules offer potential as elements of electronic devices in the next generation?

    Science.gov (United States)

    Enoki, Toshiaki; Kiguchi, Manabu

    2018-03-01

    Interest in utilizing organic molecules to fabricate electronic materials has existed ever since organic (molecular) semiconductors were first discovered in the 1950s. Since then, scientists have devoted serious effort to the creation of various molecule-based electronic systems, such as molecular metals and molecular superconductors. Single-molecule electronics and the associated basic science have emerged over the past two decades and provided hope for the development of highly integrated molecule-based electronic devices in the future (after the Si-based technology era has ended). Here, nanographenes (nano-sized graphene) with atomically precise structures are among the most promising molecules that can be utilized for electronic/spintronic devices. To manipulate single small molecules for an electronic device, a single molecular junction has been developed. It is a powerful tool that allows even small molecules to be utilized. External electric, magnetic, chemical, and mechanical perturbations can change the physical and chemical properties of molecules in a way that is different from bulk materials. Therefore, the various functionalities of molecules, along with changes induced by external perturbations, allows us to create electronic devices that we cannot create using current top-down Si-based technology. Future challenges that involve the incorporation of condensed matter physics, quantum chemistry calculations, organic synthetic chemistry, and electronic device engineering are expected to open a new era in single-molecule device electronic technology.

  15. The anisotropic tunneling behavior of spin transport in graphene-based magnetic tunneling junction

    Science.gov (United States)

    Pan, Mengchun; Li, Peisen; Qiu, Weicheng; Zhao, Jianqiang; Peng, Junping; Hu, Jiafei; Hu, Jinghua; Tian, Wugang; Hu, Yueguo; Chen, Dixiang; Wu, Xuezhong; Xu, Zhongjie; Yuan, Xuefeng

    2018-05-01

    Due to the theoretical prediction of large tunneling magnetoresistance (TMR), graphene-based magnetic tunneling junction (MTJ) has become an important branch of high-performance spintronics device. In this paper, the non-collinear spin filtering and transport properties of MTJ with the Ni/tri-layer graphene/Ni structure were studied in detail by utilizing the non-equilibrium Green's formalism combined with spin polarized density functional theory. The band structure of Ni-C bonding interface shows that Ni-C atomic hybridization facilitates the electronic structure consistency of graphene and nickel, which results in a perfect spin filtering effect for tri-layer graphene-based MTJ. Furthermore, our theoretical results show that the value of tunneling resistance changes with the relative magnetization angle of two ferromagnetic layers, displaying the anisotropic tunneling behavior of graphene-based MTJ. This originates from the resonant conduction states which are strongly adjusted by the relative magnetization angles. In addition, the perfect spin filtering effect is demonstrated by fitting the anisotropic conductance with the Julliere's model. Our work may serve as guidance for researches and applications of graphene-based spintronics device.

  16. Electronic and transport properties of Cobalt-based valence tautomeric molecules and polymers

    Science.gov (United States)

    Chen, Yifeng; Calzolari, Arrigo; Buongiorno Nardelli, Marco

    2011-03-01

    The advancement of molecular spintronics requires further understandings of the fundamental electronic structures and transport properties of prototypical spintronics molecules and polymers. Here we present a density functional based theoretical study of the electronic structures of Cobalt-based valence tautomeric molecules Co III (SQ)(Cat)L Co II (SQ)2 L and their polymers, where SQ refers to the semiquinone ligand, and Cat the catecholate ligand, while L is a redox innocent backbone ligand. The conversion from low-spin Co III ground state to high-spin Co II excited state is realized by imposing an on-site potential U on the Co atom and elongating the Co-N bond. Transport properties are subsequently calculated by extracting electronic Wannier functions from these systems and computing the charge transport in the ballistic regime using a Non-Equilibrium Green's Function (NEGF) approach. Our transport results show distinct charge transport properties between low-spin ground state and high-spin excited state, hence suggesting potential spintronics devices from these molecules and polymers such as spin valves.

  17. Oxide thin films for spintronics application growth and characterization

    OpenAIRE

    Popovici, Nicoleta, 1973-

    2009-01-01

    Tese de doutoramento, Física (Física), Universidade de Lisboa, Faculdade de Ciências, 2009 During my PhD research I have synthesized thin films of a material known as a diluted magnetic semiconductor (DMS) using the pulsed laser deposition (PLD) technique. This material is envisioned to be of importance in the emerging field of spintronics where both the charge and the spin of the carriers can be combined to yield unique functionalities. It was envisaged that if spin polarized charge carri...

  18. Summer School on Spintronics

    CERN Document Server

    Wolf, Stuart; Idzerda, Yves

    2003-01-01

    Stuart Wolf This book originated as a series of lectures that were given as part of a Summer School on Spintronics in the end of August, 1998 at Lake Tahoe, Nevada. It has taken some time to get these lectures in a form suitable for this book and so the process has been an iterative one to provide current information on the topics that are covered. There are some topics that have developed in the intervening years and we have tried to at least alert the readers to them in the Introduction where a rather complete set of references is provided to the current state of the art. The field of magnetism, once thought to be dead or dying, has seen a remarkable rebirth in the last decade and promises to get even more important as we enter the new millennium. This rebirth is due to some very new insight into how the spin degree of freedom of both electrons and nucleons can play a role in a new type of electronics that utilizes the spin in addition to or in place of the charge. For this new field to mature and prosper, ...

  19. DeviceNet-based device-level control in SSRF

    CERN Document Server

    Leng Yong Bin; Lu Cheng Meng; Miao Hai Feng; Liu Song Qiang; Shen Guo Bao

    2002-01-01

    The control system of Shanghai Synchrotron Radiation Facility is an EPICS-based distributed system. One of the key techniques to construct the system is the device-level control. The author describes the design and implementation of the DeviceNet-based device controller. A prototype of the device controller was tested in the experiments of magnet power supply and the result showed a precision of 3 x 10 sup - sup 5

  20. Flexible semi-transparent organic spin valve based on bathocuproine

    International Nuclear Information System (INIS)

    Sun, Xiangnan; Bedoya-Pinto, Amilcar; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-01

    Organic semiconductors are attractive materials for advanced spintronic applications due to their long spin lifetimes and, simultaneously, their mechanical flexibility. With the aim of combining these advantages in a single device, we report on the fabrication and properties of a mechanically flexible bathocuproine-based spin valve. This organic spin device shows great stability on both electrical and magneto-transport properties upon mechanical bending at different radius (up to r = 5 mm), while featuring long-lasting endurance (on bending over 50 times). The room-temperature magnetoresistance ratio reaches up to 3.5%, and is notably preserved under air atmosphere. The observation of spin transport at room-temperature, combined with the outstanding mechanical properties and air stability, highlights the potential of bathocuproine-based spin devices towards applications.

  1. A versatile LabVIEW and field-programmable gate array-based scanning probe microscope for in operando electronic device characterization.

    Science.gov (United States)

    Berger, Andrew J; Page, Michael R; Jacob, Jan; Young, Justin R; Lewis, Jim; Wenzel, Lothar; Bhallamudi, Vidya P; Johnston-Halperin, Ezekiel; Pelekhov, Denis V; Hammel, P Chris

    2014-12-01

    Understanding the complex properties of electronic and spintronic devices at the micro- and nano-scale is a topic of intense current interest as it becomes increasingly important for scientific progress and technological applications. In operando characterization of such devices by scanning probe techniques is particularly well-suited for the microscopic study of these properties. We have developed a scanning probe microscope (SPM) which is capable of both standard force imaging (atomic, magnetic, electrostatic) and simultaneous electrical transport measurements. We utilize flexible and inexpensive FPGA (field-programmable gate array) hardware and a custom software framework developed in National Instrument's LabVIEW environment to perform the various aspects of microscope operation and device measurement. The FPGA-based approach enables sensitive, real-time cantilever frequency-shift detection. Using this system, we demonstrate electrostatic force microscopy of an electrically biased graphene field-effect transistor device. The combination of SPM and electrical transport also enables imaging of the transport response to a localized perturbation provided by the scanned cantilever tip. Facilitated by the broad presence of LabVIEW in the experimental sciences and the openness of our software solution, our system permits a wide variety of combined scanning and transport measurements by providing standardized interfaces and flexible access to all aspects of a measurement (input and output signals, and processed data). Our system also enables precise control of timing (synchronization of scanning and transport operations) and implementation of sophisticated feedback protocols, and thus should be broadly interesting and useful to practitioners in the field.

  2. Semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  3. Ontology-Based Device Descriptions and Device Repository for Building Automation Devices

    Directory of Open Access Journals (Sweden)

    Dibowski Henrik

    2011-01-01

    Full Text Available Device descriptions play an important role in the design and commissioning of modern building automation systems and help reducing the design time and costs. However, all established device descriptions are specialized for certain purposes and suffer from several weaknesses. This hinders a further design automation, which is strongly needed for the more and more complex building automation systems. To overcome these problems, this paper presents novel Ontology-based Device Descriptions (ODDs along with a layered ontology architecture, a specific ontology view approach with virtual properties, a generic access interface, a triple store-based database backend, and a generic search mask GUI with underlying query generation algorithm. It enables a formal, unified, and extensible specification of building automation devices, ensures their comparability, and facilitates a computer-enabled retrieval, selection, and interoperability evaluation, which is essential for an automated design. The scalability of the approach to several ten thousand devices is demonstrated.

  4. Spin transport in epitaxial graphene

    Science.gov (United States)

    Tbd, -

    2014-03-01

    Spintronics is a paradigm focusing on spin as the information vector in fast and ultra-low-power non volatile devices such as the new STT-MRAM. Beyond its widely distributed application in data storage it aims at providing more complex architectures and a powerful beyond CMOS solution for information processing. The recent discovery of graphene has opened novel exciting opportunities in terms of functionalities and performances for spintronics devices. We will present experimental results allowing us to assess the potential of graphene for spintronics. We will show that unprecedented highly efficient spin information transport can occur in epitaxial graphene leading to large spin signals and macroscopic spin diffusion lengths (~ 100 microns), a key enabler for the advent of envisioned beyond-CMOS spin-based logic architectures. We will also show that how the device behavior is well explained within the framework of the Valet-Fert drift-diffusion equations. Furthermore, we will show that a thin graphene passivation layer can prevent the oxidation of a ferromagnet, enabling its use in novel humide/ambient low-cost processes for spintronics devices, while keeping its highly surface sensitive spin current polarizer/analyzer behavior and adding new enhanced spin filtering property. These different experiments unveil promising uses of graphene for spintronics.

  5. Understanding Electrically Active Interface Formation on Wide Bandgap Semiconductors through Molecular Beam Epitaxy Using Fe3O 4 for Spintronics as a Base Case

    Science.gov (United States)

    Hamedani Golshan, Negar

    Nanoelectronics, complex heterostructures, and engineered 3D matrix materials are quickly advancing from research possibilities to manufacturing challenges for applications ranging from high-power devices to solar cells to any number of novel multifunctional sensors and controllers. Formation of an abrupt and effective interface is one of the basic requirements for integration of functional materials on different types of semiconductors (from silicon to the wide bandgaps) which can significantly impact the functionality of nanoscale electronic devices. To realize the potential of next-generation electronics, the understanding and control of those initial stages of film layer formation must be understood and translated to a process that can control the initial stages of film deposition. Thin film Fe3O4 has attracted much attention as a material for exploring the potential of spintronics in next-generation information technologies. Synthesis of highly spin-polarized material as spin sources, in combination with wide bandgap semiconductors which have a long spin relaxation time in addition to functionality in high-temperature, high-power, and high-frequency environments, would enhance the performance of today's spintronic devices. Spinel ferrite Fe3O4 has a high Curie temperature of 858 K and it is predicted to possess half-metallic properties, i.e. 100% spin polarization at the Fermi level, which can lead to ultrahigh tunneling magnetoresistance at room temperature. However, these properties have been very difficult to realize in thin film form, and device design strategies require high-quality thin films of Fe3O4. The most common reason reported in literature for the failure of the films to achieve theoretical performance is that the growth techniques used today produce films with antiphase boundaries (APB). These APBs have a strong antiferromagnetic coupling that negatively impact the magnetic and transport properties of epitaxial Fe 3O4 films. Therefore, greater

  6. Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.

    Science.gov (United States)

    Lόpez-Mir, L; Frontera, C; Aramberri, H; Bouzehouane, K; Cisneros-Fernández, J; Bozzo, B; Balcells, L; Martínez, B

    2018-01-16

    Multiple spin functionalities are probed on Pt/La 2 Co 0.8 Mn 1.2 O 6 /Nb:SrTiO 3 , a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, La 2 Co 0.8 Mn 1.2 O 6 thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co 2+ which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.

  7. Microwave Plasma Based Single-Step Method for Generation of Carbon Nanostructures

    Science.gov (United States)

    2013-07-01

    Técnico, Technical University of Lisbon, Portugal 2 Mechanical and Aerospace Engeneering , Naval Postgraduate School, Monterey, CA 93943, U.S.A...applications include electronic devices, transparent conductive films, mechanical devices, chemical sensors, spintronic devices. Moreover, it shows enormous...potential as a storage material for energy applications. Graphene of highest quality can be obtained by mechanically exfoliating highly oriented

  8. A graphene spin diode based on Rashba SOI

    International Nuclear Information System (INIS)

    Mohammadpour, Hakimeh

    2015-01-01

    In this paper a graphene-based two-terminal electronic device is modeled for application in spintronics. It is based on a gapped armchair graphene nanoribbon (GNR). The electron transport is considered through a scattering or channel region which is sandwiched between two lateral semi-infinite ferromagnetic leads. The two ferromagnetic leads, being half-metallic, are supposed to be in either parallel or anti-parallel magnetization. Meanwhile, the central channel region is a normal layer under the influence of the Rashba SOI, induced e.g., by the substrate. The device operation is based on modulating the (spin-) current by tuning the strength of the RSOI. The resultant current, being spin-polarized, is controlled by the RSOI in mutual interplay with the channel length. Inverting alternating bias voltage to a fully rectified spin-current is the main achievement of this paper. - Highlights: • Graphene-based electronic device is modeled with ferromagnetic leads. • The device operation is based on modulating the (spin-) current by Rashba SOI. • Inverting alternating bias voltage to rectified spin-current is the main achievement

  9. Towards nanoscale magnetic memory elements : fabrication and properties of sub - 100 nm magnetic tunnel junctions

    NARCIS (Netherlands)

    Fabrie, C.G.C.H.M.

    2008-01-01

    The rapidly growing field of spintronics has recently attracted much attention. Spintronics is electronics in which the spin degree of freedom has been added to conventional chargebased electronic devices. A magnetic tunnel junction (MTJ) is an example of a spintronic device. MTJs consist of two

  10. Multi-parameter geometrical scaledown study for energy optimization of MTJ and related spintronics nanodevices

    Science.gov (United States)

    Farhat, I. A. H.; Alpha, C.; Gale, E.; Atia, D. Y.; Stein, A.; Isakovic, A. F.

    The scaledown of magnetic tunnel junctions (MTJ) and related nanoscale spintronics devices poses unique challenges for energy optimization of their performance. We demonstrate the dependence of the switching current on the scaledown variable, while considering the influence of geometric parameters of MTJ, such as the free layer thickness, tfree, lateral size of the MTJ, w, and the anisotropy parameter of the MTJ. At the same time, we point out which values of the saturation magnetization, Ms, and anisotropy field, Hk, can lead to lowering the switching current and overall decrease of the energy needed to operate an MTJ. It is demonstrated that scaledown via decreasing the lateral size of the MTJ, while allowing some other parameters to be unconstrained, can improve energy performance by a measurable factor, shown to be the function of both geometric and physical parameters above. Given the complex interdependencies among both families of parameters, we developed a particle swarm optimization (PSO) algorithm that can simultaneously lower energy of operation and the switching current density. Results we obtained in scaledown study and via PSO optimization are compared to experimental results. Support by Mubadala-SRC 2012-VJ-2335 is acknowledged, as are staff at Cornell-CNF and BNL-CFN.

  11. Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes

    Directory of Open Access Journals (Sweden)

    Mohd Ambri Mohamed, Nobuhito Inami, Eiji Shikoh, Yoshiyuki Yamamoto, Hidenobu Hori and Akihiko Fujiwara

    2008-01-01

    Full Text Available We describe an alternative method for realizing a carbon nanotube spin field-effect transistor device by the direct synthesis of single-walled carbon nanotubes (SWNTs on substrates by alcohol catalytic chemical vapor deposition. We observed hysteretic magnetoresistance (MR at low temperatures due to spin-dependent transport. In these devices, the maximum ratio in resistance variation of MR was found to be 1.8%.

  12. Electron spin for classical information processing: a brief survey of spin-based logic devices, gates and circuits

    International Nuclear Information System (INIS)

    Bandyopadhyay, Supriyo; Cahay, Marc

    2009-01-01

    In electronics, information has been traditionally stored, processed and communicated using an electron's charge. This paradigm is increasingly turning out to be energy-inefficient, because movement of charge within an information processing device invariably causes current flow and an associated dissipation. Replacing 'charge' with the 'spin' of an electron to encode information may eliminate much of this dissipation and lead to more energy-efficient 'green electronics'. This realization has spurred significant research in spintronic devices and circuits where spin either directly acts as the physical variable for hosting information or augments the role of charge. In this review article, we discuss and elucidate some of these ideas, and highlight their strengths and weaknesses. Many of them can potentially reduce energy dissipation significantly, but unfortunately are error-prone and unreliable. Moreover, there are serious obstacles to their technological implementation that may be difficult to overcome in the near term. This review addresses three constructs: (1) single devices or binary switches that can be constituents of Boolean logic gates for digital information processing, (2) complete gates that are capable of performing specific Boolean logic operations, and (3) combinational circuits or architectures (equivalent to many gates working in unison) that are capable of performing universal computation. (topical review)

  13. Monopole and topological electron dynamics in adiabatic spintronic and graphene systems

    International Nuclear Information System (INIS)

    Tan, S.G.; Jalil, M.B.A.; Fujita, T.

    2010-01-01

    A unified theoretical treatment is presented to describe the physics of electron dynamics in semiconductor and graphene systems. Electron spin's fast alignment with the Zeeman magnetic field (physical or effective) is treated as a form of adiabatic spin evolution which necessarily generates a monopole in magnetic space. One could transform this monopole into the physical and intuitive topological magnetic fields in the useful momentum (K) or real spaces (R). The physics of electron dynamics related to spin Hall, torque, oscillations and other technologically useful spinor effects can be inferred from the topological magnetic fields in spintronic, graphene and other SU(2) systems.

  14. Fabrication of hybrid molecular devices using multi-layer graphene break junctions

    Science.gov (United States)

    Island, J. O.; Holovchenko, A.; Koole, M.; Alkemade, P. F. A.; Menelaou, M.; Aliaga-Alcalde, N.; Burzurí, E.; van der Zant, H. S. J.

    2014-11-01

    We report on the fabrication of hybrid molecular devices employing multi-layer graphene (MLG) flakes which are patterned with a constriction using a helium ion microscope or an oxygen plasma etch. The patterning step allows for the localization of a few-nanometer gap, created by electroburning, that can host single molecules or molecular ensembles. By controlling the width of the sculpted constriction, we regulate the critical power at which the electroburning process begins. We estimate the flake temperature given the critical power and find that at low powers it is possible to electroburn MLG with superconducting contacts in close proximity. Finally, we demonstrate the fabrication of hybrid devices with superconducting contacts and anthracene-functionalized copper curcuminoid molecules. This method is extendable to spintronic devices with ferromagnetic contacts and a first step towards molecular integrated circuits.

  15. Magnetic Transport in Spin Antiferromagnets for Spintronics Applications

    Directory of Open Access Journals (Sweden)

    Mohamed Azzouz

    2017-10-01

    Full Text Available Had magnetic monopoles been ubiquitous as electrons are, we would probably have had a different form of matter, and power plants based on currents of these magnetic charges would have been a familiar scene of modern technology. Magnetic dipoles do exist, however, and in principle one could wonder if we can use them to generate magnetic currents. In the present work, we address the issue of generating magnetic currents and magnetic thermal currents in electrically-insulating low-dimensional Heisenberg antiferromagnets by invoking the (broken electricity-magnetism duality symmetry. The ground state of these materials is a spin-liquid state that can be described well via the Jordan–Wigner fermions, which permit an easy definition of the magnetic particle and thermal currents. The magnetic and magnetic thermal conductivities are calculated in the present work using the bond–mean field theory. The spin-liquid states in these antiferromagnets are either gapless or gapped liquids of spinless fermions whose flow defines a current just as the one defined for electrons in a Fermi liquid. The driving force for the magnetic current is a magnetic field with a gradient along the magnetic conductor. We predict the generation of a magneto-motive force and realization of magnetic circuits using low-dimensional Heisenberg antiferromagnets. The present work is also about claiming that what the experiments in spintronics attempt to do is trying to treat the magnetic degrees of freedoms on the same footing as the electronic ones.

  16. Manipulating spin in organic spintronics : probing the interplay between the electronic and nuclear spins in organic semiconductors

    NARCIS (Netherlands)

    Bobbert, P.A.

    2014-01-01

    The growing interest in spin manipulation in the field of spin electronics, or "spintronics," is due to the wealth of exciting possibilities that it offers in areas of magnetic sensing, new types of information storage, low-power electronics, and quantum information processing. Nuclear spin

  17. Carbon nanotubes for coherent spintronics

    DEFF Research Database (Denmark)

    Kuemmeth, Ferdinand; Churchill, H O H; Herring, P K

    2010-01-01

    Carbon nanotubes bridge the molecular and crystalline quantum worlds, and their extraordinary electronic, mechanical and optical properties have attracted enormous attention from a broad scientific community. We review the basic principles of fabricating spin-electronic devices based on individual......, electrically-gated carbon nanotubes, and present experimental efforts to understand their electronic and nuclear spin degrees of freedom, which in the future may enable quantum applications....

  18. Streamline-based microfluidic device

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Zheng, Siyang (Inventor); Kasdan, Harvey (Inventor)

    2013-01-01

    The present invention provides a streamline-based device and a method for using the device for continuous separation of particles including cells in biological fluids. The device includes a main microchannel and an array of side microchannels disposed on a substrate. The main microchannel has a plurality of stagnation points with a predetermined geometric design, for example, each of the stagnation points has a predetermined distance from the upstream edge of each of the side microchannels. The particles are separated and collected in the side microchannels.

  19. Bolometric Device Based on Fluxoid Quantization

    Science.gov (United States)

    Bonetti, Joseph A.; Kenyon, Matthew E.; Leduc, Henry G.; Day, Peter K.

    2010-01-01

    The temperature dependence of fluxoid quantization in a superconducting loop. The sensitivity of the device is expected to surpass that of other superconducting- based bolometric devices, such as superconducting transition-edge sensors and superconducting nanowire devices. Just as important, the proposed device has advantages in sample fabrication.

  20. Nanoscale magnetic ratchets based on shape anisotropy

    Science.gov (United States)

    Cui, Jizhai; Keller, Scott M.; Liang, Cheng-Yen; Carman, Gregory P.; Lynch, Christopher S.

    2017-02-01

    Controlling magnetization using piezoelectric strain through the magnetoelectric effect offers several orders of magnitude reduction in energy consumption for spintronic applications. However strain is a uniaxial effect and, unlike directional magnetic field or spin-polarized current, cannot induce a full 180° reorientation of the magnetization vector when acting alone. We have engineered novel ‘peanut’ and ‘cat-eye’ shaped nanomagnets on piezoelectric substrates that undergo repeated deterministic 180° magnetization rotations in response to individual electric-field-induced strain pulses by breaking the uniaxial symmetry using shape anisotropy. This behavior can be likened to a magnetic ratchet, advancing magnetization clockwise with each piezostrain trigger. The results were validated using micromagnetics implemented in a multiphysics finite elements code to simulate the engineered spatial and temporal magnetic behavior. The engineering principles start from a target device function and proceed to the identification of shapes that produce the desired function. This approach opens a broad design space for next generation magnetoelectric spintronic devices.

  1. Electrical detection of spin transport in Si two-dimensional electron gas systems

    Science.gov (United States)

    Chang, Li-Te; Fischer, Inga Anita; Tang, Jianshi; Wang, Chiu-Yen; Yu, Guoqiang; Fan, Yabin; Murata, Koichi; Nie, Tianxiao; Oehme, Michael; Schulze, Jörg; Wang, Kang L.

    2016-09-01

    Spin transport in a semiconductor-based two-dimensional electron gas (2DEG) system has been attractive in spintronics for more than ten years. The inherent advantages of high-mobility channel and enhanced spin-orbital interaction promise a long spin diffusion length and efficient spin manipulation, which are essential for the application of spintronics devices. However, the difficulty of making high-quality ferromagnetic (FM) contacts to the buried 2DEG channel in the heterostructure systems limits the potential developments in functional devices. In this paper, we experimentally demonstrate electrical detection of spin transport in a high-mobility 2DEG system using FM Mn-germanosilicide (Mn(Si0.7Ge0.3)x) end contacts, which is the first report of spin injection and detection in a 2DEG confined in a Si/SiGe modulation doped quantum well structure (MODQW). The extracted spin diffusion length and lifetime are l sf = 4.5 μm and {τ }{{s}}=16 {{ns}} at 1.9 K respectively. Our results provide a promising approach for spin injection into 2DEG system in the Si-based MODQW, which may lead to innovative spintronic applications such as spin-based transistor, logic, and memory devices.

  2. Rational Design of Two-Dimensional Metallic and Semiconducting Spintronic Materials Based on Ordered Double-Transition-Metal MXenes

    KAUST Repository

    Dong, Liang

    2016-12-30

    Two-dimensional (2D) materials that display robust ferromagnetism have been pursued intensively for nanoscale spintronic applications, but suitable candidates have not been identified. Here we present theoretical predictions on the design of ordered double-transition-metal MXene structures to achieve such a goal. On the basis of the analysis of electron filling in transition-metal cations and first-principles simulations, we demonstrate robust ferromagnetism in Ti2MnC2Tx monolayers regardless of the surface terminations (T = O, OH, and F), as well as in Hf2MnC2O2 and Hf2VC2O2 monolayers. The high magnetic moments (3–4 μB/unit cell) and high Curie temperatures (495–1133 K) of these MXenes are superior to those of existing 2D ferromagnetic materials. Furthermore, semimetal-to-semiconductor and ferromagnetic-to-antiferromagnetic phase transitions are predicted to occur in these materials in the presence of small or moderate tensile in-plane strains (0–3%), which can be externally applied mechanically or internally induced by the choice of transition metals.

  3. Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics.

    Science.gov (United States)

    Zhou, Weiping; Xiong, Yuanqiang; Zhang, Zhengming; Wang, Dunhui; Tan, Weishi; Cao, Qingqi; Qian, Zhenghong; Du, Youwei

    2016-03-02

    We demonstrate a memory device with multifield switchable multilevel states at room temperature based on the integration of straintronics and spintronics in a La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) (011) heterostructure. By precisely controlling the electric field applied on the PMN-PT substrate, multiple nonvolatile resistance states can be generated in La2/3Ba1/3MnO3 films, which can be ascribed to the strain-modulated metal-insulator transition and phase separation of Manganite. Furthermore, because of the strong coupling between spin and charge degrees of freedom, the resistance of the La2/3Ba1/3MnO3 film can be readily modulated by magnetic field over a broad temperature range. Therefore, by combining electroresistance and magnetoresistance effects, multilevel resistance states with excellent retention and endurance properties can be achieved at room temperature with the coactions of electric and magnetic fields. The incorporation of ferroelastic strain and magnetic and resistive properties in memory cells suggests a promising approach for multistate, high-density, and low-power consumption electronic memory devices.

  4. A Flexible Microcontroller-Based Data Acquisition Device

    OpenAIRE

    Hercog, Darko; Gergič, Bojan

    2014-01-01

    This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This d...

  5. Structure and properties of quarternary and tetragonal Heusler compounds for spintronics and spin transver torque applications

    Energy Technology Data Exchange (ETDEWEB)

    Zamani, Vajiheh Alijani

    2012-03-07

    This work is divided into two parts: part 1 is focused on the prediction of half-metallicity in quaternary Heusler compounds and their potential for spintronic applications and part 2 on the structural properties of Mn{sub 2}-based Heusler alloys and tuning the magnetism of them from soft to hard-magnetic for spin-transfer torque applications. In part 1, three different series of quaternary Heusler compounds are investigated, XX'MnGa (X=Cu, Ni and X'=Fe,Co), CoFeMnZ (Z=Al,Ga,Si,Ge), and Co{sub 2-x}Rh{sub x}MnZ (Z=Ga,Sn,Sb). All of these quaternary compounds except CuCoMnGa are predicted to be half-metallic ferromagnets by ab-initio electronic structure calculations. In the XX'MnGa class of compounds, NiFeMnGa has a low Curie temperature for technological applications but NiCoMnGa with a high spin polarization, magnetic moment, and Curie temperature is an interesting new material for spintronics applications. All CoFeMnZ compounds exhibit a cubic Heusler structur and their magnetic moments are in fair agreement with the Slater-Pauling rule indicating the halfmetallicity and high spin polarization required for spintronics applications. Their high Curie temperatures make them suitable for utilization at room temperature and above. The structural investigation revealed that the crystal structure of all Co{sub 2-x}Rh{sub x}MnZ compounds aside from CoRhMnSn exhibit different types of anti-site disorder. The magnetic moments of the disordered compounds deviate from the Slater-Pauling rule indicating that 100% spin polarization are not realized in CoRhMnGa, CoRhMnSb, and Co{sub 0.5}Rh{sub 1.5}MnSb. Exchange of one Co in Co{sub 2}MnSn by Rh results in the stable, well-ordered compound CoRhMnSn. This exchange of one of the magnetic Co atoms by a non-magnetic Rh atom keeps the magnetic properties and half-metallicity intact. In part 2, two series of Mn{sub 2}-based Heusler alloys are investigated, Mn{sub 3-x}Co{sub x}Ga and Mn{sub 2-x}Rh{sub 1+x}Sn. It has been

  6. High and tunable spin current induced by magnetic-electric fields in a single-mode spintronic device

    International Nuclear Information System (INIS)

    Bala Kumar, S; Jalil, M B A; Tan, S G; Liang, G-C

    2009-01-01

    We proposed that a viable form of spin current transistor is one to be made from a single-mode device which passes electrons through a series of magnetic-electric barriers built into the device. The barriers assume a wavy spatial profile across the conduction path due to the inevitable broadening of the magnetic fields. Field broadening results in a linearly increasing vector potential across the conduction channel, which increases spin polarization. We have identified that the important factors for generating high spin polarization and conductance modulation are the low source-drain bias, the broadened magnetic fields, and the high number of FM gates within a fixed channel length.

  7. Value-based purchasing of medical devices.

    Science.gov (United States)

    Obremskey, William T; Dail, Teresa; Jahangir, A Alex

    2012-04-01

    Health care in the United States is known for its continued innovation and production of new devices and techniques. While the intention of these devices is to improve the delivery and outcome of patient care, they do not always achieve this goal. As new technologies enter the market, hospitals and physicians must determine which of these new devices to incorporate into practice, and it is important these devices bring value to patient care. We provide a model of a physician-engaged process to decrease cost and increase review of physician preference items. We describe the challenges, implementation, and outcomes of cost reduction and product stabilization of a value-based process for purchasing medical devices at a major academic medical center. We implemented a physician-driven committee that standardized and utilized evidence-based, clinically sound, and financially responsible methods for introducing or consolidating new supplies, devices, and technology for patient care. This committee worked with institutional finance and administrative leaders to accomplish its goals. Utilizing this physician-driven committee, we provided access to new products, standardized some products, decreased costs of physician preference items 11% to 26% across service lines, and achieved savings of greater than $8 million per year. The implementation of a facility-based technology assessment committee that critically evaluates new technology can decrease hospital costs on implants and standardize some product lines.

  8. Current-based detection of nonlocal spin transport in graphene for spin-based logic applications

    Science.gov (United States)

    Wen, Hua; Zhu, Tiancong; Luo, Yunqiu Kelly; Amamou, Walid; Kawakami, Roland K.

    2014-05-01

    Graphene has been proposed for novel spintronic devices due to its robust and efficient spin transport properties at room temperature. Some of the most promising proposals require current-based readout for integration purposes, but the current-based detection of spin accumulation has not yet been developed. In this work, we demonstrate current-based detection of spin transport in graphene using a modified nonlocal geometry. By adding a variable shunt resistor in parallel to the nonlocal voltmeter, we are able to systematically cross over from the conventional voltage-based detection to current-based detection. As the shunt resistor is reduced, the output current from the spin accumulation increases as the shunt resistance drops below a characteristic value R*. We analyze this behavior using a one-dimensional drift-diffusion model, which accounts well for the observed behavior. These results provide the experimental and theoretical foundation for current-based detection of nonlocal spin transport.

  9. Substrate structures for InP-based devices

    International Nuclear Information System (INIS)

    Wanlass, M.W.; Sheldon, P.

    1990-01-01

    A substrate structure for an InP-based semiconductor device having an InP based film is described. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at the opposite end to the InP=based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device

  10. Graphene-based energy devices

    CERN Document Server

    Yusoff, A Rashid bin Mohd

    2015-01-01

    This first book dedicated to the topic provides an up-to-date account of the many opportunities graphene offers for robust, workable energy generation and storage devices. Following a brief overview of the fundamentals of graphene, including the main synthesis techniques, characterization methods and properties, the first part goes on to deal with graphene for energy storage applications, such as lithium-ion batteries, supercapacitors and hydrogen storage. The second part is concerned with graphene-based energy-generation devices, in particular conventional as well as microbial and enzymatic f

  11. Secure-Network-Coding-Based File Sharing via Device-to-Device Communication

    Directory of Open Access Journals (Sweden)

    Lei Wang

    2017-01-01

    Full Text Available In order to increase the efficiency and security of file sharing in the next-generation networks, this paper proposes a large scale file sharing scheme based on secure network coding via device-to-device (D2D communication. In our scheme, when a user needs to share data with others in the same area, the source node and all the intermediate nodes need to perform secure network coding operation before forwarding the received data. This process continues until all the mobile devices in the networks successfully recover the original file. The experimental results show that secure network coding is very feasible and suitable for such file sharing. Moreover, the sharing efficiency and security outperform traditional replication-based sharing scheme.

  12. Carbon Nanotube Paper-Based Electroanalytical Devices

    Directory of Open Access Journals (Sweden)

    Youngmi Koo

    2016-04-01

    Full Text Available Here, we report on carbon nanotube paper-based electroanalytical devices. A highly aligned-carbon nanotube (HA-CNT array, grown using chemical vapor deposition (CVD, was processed to form bi-layered paper with an integrated cellulose-based Origami-chip as the electroanalytical device. We used an inverse-ordered fabrication method from a thick carbon nanotube (CNT sheet to a thin CNT sheet. A 200-layered HA-CNT sheet and a 100-layered HA-CNT sheet are explored as a working electrode. The device was fabricated using the following methods: (1 cellulose-based paper was patterned using a wax printer, (2 electrical connection was made using a silver ink-based circuit printer, and (3 three electrodes were stacked on a 2D Origami cell. Electrochemical behavior was evaluated using electrochemical impedance spectroscopy (EIS and cyclic voltammetry (CV. We believe that this platform could attract a great deal of interest for use in various chemical and biomedical applications.

  13. Semiconductor-based, large-area, flexible, electronic devices on {110} oriented substrates

    Science.gov (United States)

    Goyal, Amit

    2014-08-05

    Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110} textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  14. [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit

    2015-03-24

    Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  15. Tailoring spin injection and magnetoresistance in ferromagnet/graphene junctions from first principles

    Science.gov (United States)

    Lazic, Predrag; Sipahi, Guilherme; Kawakami, Roland; Zutic, Igor

    2013-03-01

    Recent experimental advances in graphene suggest intriguing opportunities for novel spintronic applications which could significantly exceed the state-of-the art performance of their conventional charge-based counterparts. However, for reliable operation of such spintronic devices it is important to achieve an efficient spin injection and large magnetoresistive effects. We use the first principles calculations to guide the choice of a ferromagnetic region and its relative orientation to optimize the desired effects. We propose structures which could enable uniform spin injection, one of the key factors in implementing scalable spintronic circuits. Supported by NSF-NRI, SRC, ONR, Croatian Ministry of Science, Education, and Sports, and CCR at SUNY UB.

  16. Secure-Network-Coding-Based File Sharing via Device-to-Device Communication

    OpenAIRE

    Wang, Lei; Wang, Qing

    2017-01-01

    In order to increase the efficiency and security of file sharing in the next-generation networks, this paper proposes a large scale file sharing scheme based on secure network coding via device-to-device (D2D) communication. In our scheme, when a user needs to share data with others in the same area, the source node and all the intermediate nodes need to perform secure network coding operation before forwarding the received data. This process continues until all the mobile devices in the netw...

  17. Graphene devices based on laser scribing technology

    Science.gov (United States)

    Qiao, Yan-Cong; Wei, Yu-Hong; Pang, Yu; Li, Yu-Xing; Wang, Dan-Yang; Li, Yu-Tao; Deng, Ning-Qin; Wang, Xue-Feng; Zhang, Hai-Nan; Wang, Qian; Yang, Zhen; Tao, Lu-Qi; Tian, He; Yang, Yi; Ren, Tian-Ling

    2018-04-01

    Graphene with excellent electronic, thermal, optical, and mechanical properties has great potential applications. The current devices based on graphene grown by micromechanical exfoliation, chemical vapor deposition (CVD), and thermal decomposition of silicon carbide are still expensive and inefficient. Laser scribing technology, a low-cost and time-efficient method of fabricating graphene, is introduced in this review. The patterning of graphene can be directly performed on solid and flexible substrates. Therefore, many novel devices such as strain sensors, acoustic devices, memory devices based on laser scribing graphene are fabricated. The outlook and challenges of laser scribing technology have also been discussed. Laser scribing may be a potential way of fabricating wearable and integrated graphene systems in the future.

  18. Energy-Based Devices in Treatment of Acne Vulgaris.

    Science.gov (United States)

    Handler, Marc Z; Bloom, Bradley S; Goldberg, David J

    2016-05-01

    Acne vulgaris is a chronic dermatologic complaint with a multifactorial cause. Traditionally, antibiotics and retinoids have been used to manage the condition; patient compliance has been an ongoing issue. A variety of energy-based devices have been reported to be effective in the treatment of acne vulgaris. To review and summarize the current literature specific to treatment of acne vulgaris with energy-based devices. A review of the current literature of energy-based devices used for the treatment of acne vulgaris. Although limited randomized controlled trials for the treatment of acne have been performed, significant clinical improvement of acne vulgaris, especially of inflammatory lesions, has been demonstrated with a variety of energy-based devices. Newer approaches may lead to even better results.

  19. Toward flexible polymer and paper-based energy storage devices

    Energy Technology Data Exchange (ETDEWEB)

    Nyholm, Leif [Department of Materials Chemistry, The Aangstroem Laboratory, Uppsala University, Box 538, SE-751 21 Uppsala (Sweden); Nystroem, Gustav; Mihranyan, Albert; Stroemme, Maria [Nanotechnology and Functional Materials, Department of Engineering Sciences, The Aangstroem Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden)

    2011-09-01

    All-polymer and paper-based energy storage devices have significant inherent advantages in comparison with many currently employed batteries and supercapacitors regarding environmental friendliness, flexibility, cost and versatility. The research within this field is currently undergoing an exciting development as new polymers, composites and paper-based devices are being developed. In this report, we review recent progress concerning the development of flexible energy storage devices based on electronically conducting polymers and cellulose containing composites with particular emphasis on paper-based batteries and supercapacitors. We discuss recent progress in the development of the most commonly used electronically conducting polymers used in flexible device prototypes, the advantages and disadvantages of this type of energy storage devices, as well as the two main approaches used in the manufacturing of paper-based charge storage devices. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Remote media vision-based computer input device

    Science.gov (United States)

    Arabnia, Hamid R.; Chen, Ching-Yi

    1991-11-01

    In this paper, we introduce a vision-based computer input device which has been built at the University of Georgia. The user of this system gives commands to the computer without touching any physical device. The system receives input through a CCD camera; it is PC- based and is built on top of the DOS operating system. The major components of the input device are: a monitor, an image capturing board, a CCD camera, and some software (developed by use). These are interfaced with a standard PC running under the DOS operating system.

  1. A Flexible Microcontroller-Based Data Acquisition Device

    Directory of Open Access Journals (Sweden)

    Darko Hercog

    2014-06-01

    Full Text Available This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC. The presented embedded DAQ device contains a preloaded program (firmware that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID. This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI, can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

  2. A flexible microcontroller-based data acquisition device.

    Science.gov (United States)

    Hercog, Darko; Gergič, Bojan

    2014-06-02

    This paper presents a low-cost microcontroller-based data acquisition device. The key component of the presented solution is a configurable microcontroller-based device with an integrated USB transceiver and a 12-bit analogue-to-digital converter (ADC). The presented embedded DAQ device contains a preloaded program (firmware) that enables easy acquisition and generation of analogue and digital signals and data transfer between the device and the application running on a PC via USB bus. This device has been developed as a USB human interface device (HID). This USB class is natively supported by most of the operating systems and therefore any installation of additional USB drivers is unnecessary. The input/output peripheral of the presented device is not static but rather flexible, and could be easily configured to customised needs without changing the firmware. When using the developed configuration utility, a majority of chip pins can be configured as analogue input, digital input/output, PWM output or one of the SPI lines. In addition, LabVIEW drivers have been developed for this device. When using the developed drivers, data acquisition and signal processing algorithms as well as graphical user interface (GUI), can easily be developed using a well-known, industry proven, block oriented LabVIEW programming environment.

  3. Model-based engineering for medical-device software.

    Science.gov (United States)

    Ray, Arnab; Jetley, Raoul; Jones, Paul L; Zhang, Yi

    2010-01-01

    This paper demonstrates the benefits of adopting model-based design techniques for engineering medical device software. By using a patient-controlled analgesic (PCA) infusion pump as a candidate medical device, the authors show how using models to capture design information allows for i) fast and efficient construction of executable device prototypes ii) creation of a standard, reusable baseline software architecture for a particular device family, iii) formal verification of the design against safety requirements, and iv) creation of a safety framework that reduces verification costs for future versions of the device software. 1.

  4. Progress of Terahertz Devices Based on Graphene

    Institute of Scientific and Technical Information of China (English)

    Mai-Xia Fu; Yan Zhang

    2013-01-01

    Graphene is a one-atom-thick planar sheet of sp2-hybridized orbital bonded honeycomb carbon crystal. Its gapless and linear energy spectra of electrons and holes lead to the unique carrier transport and optical properties, such as giant carrier mobility and broadband flat optical response. As a novel material, graphene has been regarded to be extremely suitable and competent for the development of terahertz (THz) optical devices. In this paper, the fundamental electronic and optic properties of graphene are described. Based on the energy band structure and light transmittance properties of graphene, many novel graphene based THz devices have been proposed, including modulator, generator, detector, and imaging device. This progress has been reviewed. Future research directions of the graphene devices for THz applications are also proposed.

  5. Carbon Based Transistors and Nanoelectronic Devices

    Science.gov (United States)

    Rouhi, Nima

    Carbon based materials (carbon nanotube and graphene) has been extensively researched during the past decade as one of the promising materials to be used in high performance device technology. In long term it is thought that they may replace digital and/or analog electronic devices, due to their size, near-ballistic transport, and high stability. However, a more realistic point of insertion into market may be the printed nanoelectronic circuits and sensors. These applications include printed circuits for flexible electronics and displays, large-scale bendable electrical contacts, bio-membranes and bio sensors, RFID tags, etc. In order to obtain high performance thin film transistors (as the basic building block of electronic circuits) one should be able to manufacture dense arrays of all semiconducting nanotubes. Besides, graphene synthesize and transfer technology is in its infancy and there is plenty of room to improve the current techniques. To realize the performance of nanotube and graphene films in such systems, we need to economically fabricate large-scale devices based on these materials. Following that the performance control over such devices should also be considered for future design variations for broad range of applications. Here we have first investigated carbon nanotube ink as the base material for our devices. The primary ink used consisted of both metallic and semiconducting nanotubes which resulted in networks suitable for moderate-resistivity electrical connections (such as interconnects) and rfmatching circuits. Next, purified all-semiconducting nanotube ink was used to fabricate waferscale, high performance (high mobility, and high on/off ratio) thin film transistors for printed electronic applications. The parameters affecting device performance were studied in detail to establish a roadmap for the future of purified nanotube ink printed thin film transistors. The trade of between mobility and on/off ratio of such devices was studied and the

  6. Cellphone-based devices for bioanalytical sciences

    Science.gov (United States)

    Vashist, Sandeep Kumar; Mudanyali, Onur; Schneider, E.Marion; Zengerle, Roland; Ozcan, Aydogan

    2014-01-01

    During the last decade, there has been a rapidly growing trend toward the use of cellphone-based devices (CBDs) in bioanalytical sciences. For example, they have been used for digital microscopy, cytometry, read-out of immunoassays and lateral flow tests, electrochemical and surface plasmon resonance based bio-sensing, colorimetric detection and healthcare monitoring, among others. Cellphone can be considered as one of the most prospective devices for the development of next-generation point-of-care (POC) diagnostics platforms, enabling mobile healthcare delivery and personalized medicine. With more than 6.5 billion cellphone subscribers worldwide and approximately 1.6 billion new devices being sold each year, cellphone technology is also creating new business and research opportunities. Many cellphone-based devices, such as those targeted for diabetic management, weight management, monitoring of blood pressure and pulse rate, have already become commercially-available in recent years. In addition to such monitoring platforms, several other CBDs are also being introduced, targeting e.g., microscopic imaging and sensing applications for medical diagnostics using novel computational algorithms and components already embedded on cellphones. This manuscript aims to review these recent developments in CBDs for bioanalytical sciences along with some of the challenges involved and the future opportunities. PMID:24287630

  7. Proposal for an All-Spin Artificial Neural Network: Emulating Neural and Synaptic Functionalities Through Domain Wall Motion in Ferromagnets.

    Science.gov (United States)

    Sengupta, Abhronil; Shim, Yong; Roy, Kaushik

    2016-12-01

    Non-Boolean computing based on emerging post-CMOS technologies can potentially pave the way for low-power neural computing platforms. However, existing work on such emerging neuromorphic architectures have either focused on solely mimicking the neuron, or the synapse functionality. While memristive devices have been proposed to emulate biological synapses, spintronic devices have proved to be efficient at performing the thresholding operation of the neuron at ultra-low currents. In this work, we propose an All-Spin Artificial Neural Network where a single spintronic device acts as the basic building block of the system. The device offers a direct mapping to synapse and neuron functionalities in the brain while inter-layer network communication is accomplished via CMOS transistors. To the best of our knowledge, this is the first demonstration of a neural architecture where a single nanoelectronic device is able to mimic both neurons and synapses. The ultra-low voltage operation of low resistance magneto-metallic neurons enables the low-voltage operation of the array of spintronic synapses, thereby leading to ultra-low power neural architectures. Device-level simulations, calibrated to experimental results, was used to drive the circuit and system level simulations of the neural network for a standard pattern recognition problem. Simulation studies indicate energy savings by  ∼  100× in comparison to a corresponding digital/analog CMOS neuron implementation.

  8. Innovative energy absorbing devices based on composite tubes

    Science.gov (United States)

    Tiwari, Chandrashekhar

    Analytical and experimental study of innovative load limiting and energy absorbing devices are presented here. The devices are based on composite tubes and can be categorized in to two groups based upon the energy absorbing mechanisms exhibited by them, namely: foam crushing and foam fracturing. The device based on foam crushing as the energy absorbing mechanism is composed of light weight elastic-plastic foam filling inside an angle ply composite tube. The tube is tailored to have a high Poisson’s ratio (>20). Upon being loaded the device experiences large transverse contraction resulting in rapid decrease in diameter. At a certain axial load the foam core begins to crush and energy is dissipated. This device is termed as crush tube device. The device based upon foam shear fracture as the energy absorbing mechanism involves an elastic-plastic core foam in annulus of two concentric extension-twist coupled composite tubes with opposite angles of fibers. The core foam is bonded to the inner and outer tube walls. Upon being loaded axially, the tubes twist in opposite directions and fracture the core foam in out of plane shear and thus dissipate the energy stored. The device is termed as sandwich core device (SCD). The devices exhibit variations in force-displacement characteristics with changes in design and material parameters, resulting in wide range of energy absorption capabilities. A flexible matrix composite system was selected, which was composed of high stiffness carbon fibers as reinforcements in relatively low stiffness polyurethane matrix, based upon large strain to failure capabilities and large beneficial elastic couplings. Linear and non-linear analytical models were developed encapsulating large deformation theory of the laminated composite shells (using non-linear strain energy formulation) to the fracture mechanics of core foam and elastic-plastic deformation theory of the foam filling. The non-linear model is capable of including material and

  9. Ultrathin magnetic structures IV applications of nanomagnetism

    CERN Document Server

    Heinrich, Bretislav

    2004-01-01

    The ability to understand and control the unique properties of interfaces has created an entirely new field of magnetism which already has a profound impact in technology and is providing the basis for a revolution in electronics. The last decade has seen dramatic progress in the development of magnetic devices for information technology but also in the basic understanding of the physics of magnetic nanostructures. Volume III describes thin film magnetic properties and methods for characterising thin film structure topics that underpin the present 'spintronics' revolution in which devices are based on combined magnetic materials and semiconductors. The present volume (IV) deals with the fundamentals of spintronics: magnetoelectronic materials, spin injection and detection, micromagnetics and the development of magnetic random access memory based on GMR and tunnel junction devices. Together these books provide readers with a comprehensive account of an exciting and rapidly developing field. The treatment is de...

  10. Ultrathin magnetic structures III fundamentals of nanomagnetism

    CERN Document Server

    Bland, JAC

    2004-01-01

    The ability to understand and control the unique properties of interfaces has created an entirely new field of magnetism which already has a profound impact in technology and is providing the basis for a revolution in electronics. The last decade has seen dramatic progress in the development of magnetic devices for information technology but also in the basic understanding of the physics of magnetic nanostructures. This volume describes thin film magnetic properties and methods for characterising thin film structure topics that underpin the present 'spintronics' revolution in which devices are based on combined magnetic materials and semiconductors. Volume IV deals with the fundamentals of spintronics: magnetoelectronic materials, spin injection and detection, micromagnetics and the development of magnetic random access memory based on GMR and tunnel junction devices. Together these books provide readers with a comprehensive account of an exciting and rapidly developing field. The treatment is designed to be ...

  11. Silicon based light-emitting materials and devices

    International Nuclear Information System (INIS)

    Chen Weide

    1999-01-01

    Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

  12. Generalized non-Local Resistance Expression and its Application in F/N/F Spintronic Structure with Graphene Channel

    Science.gov (United States)

    Wei, Huazhou; Fu, Shiwei

    We report our work on the spin transport properties in the F/N/F(ferromagnets/normal metal/ferromagnets) spintronic structure from a new theoretical perspective. A significant problem in the field is to explain the inferior measured order of magnitude for spin lifetime. Based on the known non-local resistance formula and the mechanism analysis of spin-flipping within the interfaces between F and N, we analytically derive a broadly applicable new non-local resistance expression and a generalized Hanle curve formula. After employing them in the F/N/F structure under different limits, especially in the case of graphene channel, we find that the fitting from experimental data would yield a longer spin lifetime, which approaches its theoretical predicted value in graphene. The authors acknowledge the financial support by China University of Petroleum-Beijing and the Key Laboratory of Optical Detection Technology for Oil and Gas in this institution.

  13. Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory

    Science.gov (United States)

    Takaya, Satoshi; Tanamoto, Tetsufumi; Noguchi, Hiroki; Ikegami, Kazutaka; Abe, Keiko; Fujita, Shinobu

    2017-04-01

    Among the diverse applications of spintronics, security for internet-of-things (IoT) devices is one of the most important. A physically unclonable function (PUF) with a spin device (spin transfer torque magnetoresistive random access memory, STT-MRAM) is presented. Oxide tunnel barrier breakdown is used to realize long-term stability for PUFs. A secure PUF has been confirmed by evaluating the Hamming distance of a 32-bit STT-MRAM-PUF fabricated using 65 nm CMOS technology.

  14. Electron-Spin Filters Would Offer Spin Polarization Greater than 1

    Science.gov (United States)

    Ting, David Z.

    2009-01-01

    A proposal has been made to develop devices that would generate spin-polarized electron currents characterized by polarization ratios having magnitudes in excess of 1. Heretofore, such devices (denoted, variously, as spin injectors, spin polarizers, and spin filters) have typically offered polarization ratios having magnitudes in the approximate range of 0.01 to 0.1. The proposed devices could be useful as efficient sources of spin-polarized electron currents for research on spintronics and development of practical spintronic devices.

  15. Torsion based universal MEMS logic device

    KAUST Repository

    Ilyas, Saad; Carreno, Armando Arpys Arevalo; Bayes, Ernesto; Foulds, Ian G.; Younis, Mohammad I.

    2015-01-01

    In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 volts. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.

  16. Torsion based universal MEMS logic device

    KAUST Repository

    Ilyas, Saad

    2015-10-28

    In this work we demonstrate torsion based complementary MEMS logic device, which is capable, of performing INVERTER, AND, NAND, NOR, and OR gates using one physical structure within an operating range of 0-10 volts. It can also perform XOR and XNOR with one access inverter using the same structure with different electrical interconnects. The paper presents modeling, fabrication and experimental calculations of various performance features of the device including lifetime, power consumption and resonance frequency. The fabricated device is 535 μm by 150 μm with a gap of 1.92 μm and a resonant frequency of 6.51 kHz. The device is capable of performing the switching operation with a frequency of 1 kHz.

  17. Spin voltage generation through optical excitation of complementary spin populations

    Science.gov (United States)

    Bottegoni, Federico; Celebrano, Michele; Bollani, Monica; Biagioni, Paolo; Isella, Giovanni; Ciccacci, Franco; Finazzi, Marco

    2014-08-01

    By exploiting the spin degree of freedom of carriers inside electronic devices, spintronics has a huge potential for quantum computation and dissipationless interconnects. Pure spin currents in spintronic devices should be driven by a spin voltage generator, able to drive the spin distribution out of equilibrium without inducing charge currents. Ideally, such a generator should operate at room temperature, be highly integrable with existing semiconductor technology, and not interfere with other spintronic building blocks that make use of ferromagnetic materials. Here we demonstrate a device that matches these requirements by realizing the spintronic equivalent of a photovoltaic generator. Whereas a photovoltaic generator spatially separates photoexcited electrons and holes, our device exploits circularly polarized light to produce two spatially well-defined electron populations with opposite in-plane spin projections. This is achieved by modulating the phase and amplitude of the light wavefronts entering a semiconductor (germanium) with a patterned metal overlayer (platinum). The resulting light diffraction pattern features a spatially modulated chirality inside the semiconductor, which locally excites spin-polarized electrons thanks to electric dipole selection rules.

  18. Building blocks of Collagen based biomaterial devices

    Indian Academy of Sciences (India)

    First page Back Continue Last page Overview Graphics. Building blocks of Collagen based biomaterial devices. Collagen as a protein. Collagen in tissues and organs. Stabilizing and cross linking agents. Immunogenicity. Hosts (drugs). Controlled release mechanisms of hosts. Biodegradability, workability into devices ...

  19. Toward spin-based Magneto Logic Gate in Graphene

    Science.gov (United States)

    Wen, Hua; Dery, Hanan; Amamou, Walid; Zhu, Tiancong; Lin, Zhisheng; Shi, Jing; Zutic, Igor; Krivorotov, Ilya; Sham, Lu; Kawakami, Roland

    Graphene has emerged as a leading candidate for spintronic applications due to its long spin diffusion length at room temperature. A universal magnetologic gate (MLG) based on spin transport in graphene has been recently proposed as the building block of a logic circuit which could replace the current CMOS technology. This MLG has five ferromagnetic electrodes contacting a graphene channel and can be considered as two three-terminal XOR logic gates. Here we demonstrate this XOR logic gate operation in such a device. This was achieved by systematically tuning the injection current bias to balance the spin polarization efficiency of the two inputs, and offset voltage in the detection circuit to obtain binary outputs. The output is a current which corresponds to different logic states: zero current is logic `0', and nonzero current is logic `1'. We find improved performance could be achieved by reducing device size and optimizing the contacts.

  20. A versatile nanotechnology to connect individual nano-objects for the fabrication of hybrid single-electron devices

    International Nuclear Information System (INIS)

    Bernand-Mantel, A; Bouzehouane, K; Seneor, P; Fusil, S; Deranlot, C; Petroff, F; Fert, A; Brenac, A; Notin, L; Morel, R

    2010-01-01

    We report on the high yield connection of single nano-objects as small as a few nanometres in diameter to separately elaborated metallic electrodes, using a 'table-top' nanotechnology. Single-electron transport measurements validate that transport occurs through a single nano-object. The vertical geometry of the device natively allows an independent choice of materials for each electrode and the nano-object. In addition ferromagnetic materials can be used without encountering oxidation problems. The possibility of elaborating such hybrid nanodevices opens new routes for the democratization of spintronic studies in low dimensions.

  1. Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

    Directory of Open Access Journals (Sweden)

    Leilei Xu

    2017-01-01

    Full Text Available Two-dimensional (2D layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR properties of a black phosphorus (BP spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.

  2. Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires

    Science.gov (United States)

    Luo, Jun-Wei; Li, Shu-Shen; Zunger, Alex

    2017-09-01

    The electric field manipulation of the Rashba spin-orbit coupling effects provides a route to electrically control spins, constituting the foundation of the field of semiconductor spintronics. In general, the strength of the Rashba effects depends linearly on the applied electric field and is significant only for heavy-atom materials with large intrinsic spin-orbit interaction under high electric fields. Here, we illustrate in 1D semiconductor nanowires an anomalous field dependence of the hole (but not electron) Rashba effect (HRE). (i) At low fields, the strength of the HRE exhibits a steep increase with the field so that even low fields can be used for device switching. (ii) At higher fields, the HRE undergoes a rapid transition to saturation with a giant strength even for light-atom materials such as Si (exceeding 100 meV Å). (iii) The nanowire-size dependence of the saturation HRE is rather weak for light-atom Si, so size fluctuations would have a limited effect; this is a key requirement for scalability of Rashba-field-based spintronic devices. These three features offer Si nanowires as a promising platform for the realization of scalable complementary metal-oxide-semiconductor compatible spintronic devices.

  3. Organic Nonvolatile Memory Devices Based on Ferroelectricity

    NARCIS (Netherlands)

    Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  4. Organic nonvolatile memory devices based on ferroelectricity

    NARCIS (Netherlands)

    Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  5. An investigation of paper based microfluidic devices for size based separation and extraction applications.

    Science.gov (United States)

    Zhong, Z W; Wu, R G; Wang, Z P; Tan, H L

    2015-09-01

    Conventional microfluidic devices are typically complex and expensive. The devices require the use of pneumatic control systems or highly precise pumps to control the flow in the devices. This work investigates an alternative method using paper based microfluidic devices to replace conventional microfluidic devices. Size based separation and extraction experiments conducted were able to separate free dye from a mixed protein and dye solution. Experimental results showed that pure fluorescein isothiocyanate could be separated from a solution of mixed fluorescein isothiocyanate and fluorescein isothiocyanate labeled bovine serum albumin. The analysis readings obtained from a spectrophotometer clearly show that the extracted tartrazine sample did not contain any amount of Blue-BSA, because its absorbance value was 0.000 measured at a wavelength of 590nm, which correlated to Blue-BSA. These demonstrate that paper based microfluidic devices, which are inexpensive and easy to implement, can potentially replace their conventional counterparts by the use of simple geometry designs and the capillary action. These findings will potentially help in future developments of paper based microfluidic devices. Copyright © 2015 Elsevier B.V. All rights reserved.

  6. Carbon-Nanotube-Based Thermoelectric Materials and Devices

    Energy Technology Data Exchange (ETDEWEB)

    Blackburn, Jeffrey L. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden CO 80401-3305 USA; Ferguson, Andrew J. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden CO 80401-3305 USA; Cho, Chungyeon [Department of Mechanical Engineering, Texas A& M University, College Station TX 77843-3003 USA; Grunlan, Jaime C. [Department of Mechanical Engineering, Texas A& M University, College Station TX 77843-3003 USA

    2018-01-22

    Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g-1) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting.

  7. An oxide-based thermoelectric generator: Transversal thermoelectric strip-device

    Science.gov (United States)

    Teichert, S.; Bochmann, A.; Reimann, T.; Schulz, T.; Dreßler, C.; Töpfer, J.

    2015-07-01

    A special design of an oxide-based transversal thermoelectric device utilizing thermoelectric oxides in combination with a ceramic multilayer technology is proposed. Metal strips within the ceramic matrix replace the tilted stack of alternating layers used in artificial anisotropic transversal thermoelectric devices. Numerical three-dimensional simulations of both device types reveal better thermoelectric performance data for the device with metal stripes. A monolithic transversal strip-device based on the material combination La1.97Sr0.03CuO4/Ag6Pd1 was prepared and electrically characterized. A maximum power output of 4.0 mW was determined at ΔT = 225 K for the monolithic device. The observed results are in remarkable agreement with three-dimensional numerical simulations utilizing the transport parameters of the two materials and the geometry data of the device.

  8. Value-based procurement of medical devices: Application to devices for mechanical thrombectomy in ischemic stroke.

    Science.gov (United States)

    Trippoli, Sabrina; Caccese, Erminia; Marinai, Claudio; Messori, Andrea

    2018-03-01

    In the acute ischemic stroke, endovascular devices have shown promising clinical results and are also likely to represent value for money, as several modeling studies have shown. Pharmacoeconomic evaluations in this field, however, have little impact on the procurement of these devices. The present study explored how complex pharmacoeconomic models that evaluate effectiveness and cost can be incorporated into the in-hospital procurement of thrombectomy devices. As regards clinical modeling, we extracted outcomes at three months from randomized trials conducted for four thrombectomy devices, and we projected long-term results using standard Markov modeling. In estimating QALYs, the same model was run for the four devices. As regards economic modeling, we firstly estimated for each device the net monetary benefit (NMB) per patient (threshold = $60,000 per QALY); then, we simulated a competitive tender across the four products by determining the tender-based score (on a 0-to-100 scale). Prices of individual devices were obtained from manufacturers. Extensive sensitivity testing was applied to our analyses. For the four devices (Solitaire, Trevo, Penumbra, Solumbra), QALYs were 1.86, 1.52, 1,79, 1.35, NMB was $101,824, $83,546, $101,923, $69,440, and tender-based scores were 99.70, 43.43, 100, 0, respectively. Sensitivity analysis confirmed findings from base-case. Our results indicate that, in the field of thrombectomy devices, incorporating the typical tools of cost-effectiveness into the processes of tenders and procurement is feasible. Bridging the methodology of cost-effectiveness with the every-day practice of in-hospital procurement can contribute to maximizing the health returns that are generated by in-hospital expenditures for medical devices. Copyright © 2018 Elsevier B.V. All rights reserved.

  9. Observation of Various and Spontaneous Magnetic Skyrmionic Bubbles at Room Temperature in a Frustrated Kagome Magnet with Uniaxial Magnetic Anisotropy

    KAUST Repository

    Hou, Zhipeng

    2017-06-07

    The quest for materials hosting topologically protected skyrmionic spin textures continues to be fueled by the promise of novel devices. Although many materials have demonstrated the existence of such spin textures, major challenges remain to be addressed before devices based on magnetic skyrmions can be realized. For example, being able to create and manipulate skyrmionic spin textures at room temperature is of great importance for further technological applications because they can adapt to various external stimuli acting as information carriers in spintronic devices. Here, the first observation of skyrmionic magnetic bubbles with variable topological spin textures formed at room temperature in a frustrated kagome Fe3 Sn2 magnet with uniaxial magnetic anisotropy is reported. The magnetization dynamics are investigated using in situ Lorentz transmission electron microscopy, revealing that the transformation between different magnetic bubbles and domains is via the motion of Bloch lines driven by an applied external magnetic field. These results demonstrate that Fe3 Sn2 facilitates a unique magnetic control of topological spin textures at room temperature, making it a promising candidate for further skyrmion-based spintronic devices.

  10. X-ray analysis of spintronic semiconductor and half metal thin film systems; Roentgenstrukturuntersuchungen an spintronischen Halbleiter- und Halbmetall-Duennschichtsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Stahl, Andreas

    2010-07-01

    In this work the structural properties of spintronic semiconductor and halfmetalic thin-film systems were investigated. The layer thicknesses and interface roughnesses of the multi-layer systems were estimated by X-ray reflectivity measurements. The fits were performed using the software Fewlay which uses the Parratt formalism to calculate the reflectivities. The relaxation of the films was analyzed by reciprocal space mapping on preferably highly indexed Bragg reflexes. (orig.)

  11. {100} or 45.degree.-rotated {100}, semiconductor-based, large-area, flexible, electronic devices

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2012-05-15

    Novel articles and methods to fabricate the same resulting in flexible, {100} or 45.degree.-rotated {100} oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  12. A novel conduit-based coaptation device for primary nerve repair.

    Science.gov (United States)

    Bamba, Ravinder; Riley, D Colton; Kelm, Nathaniel D; Cardwell, Nancy; Pollins, Alonda C; Afshari, Ashkan; Nguyen, Lyly; Dortch, Richard D; Thayer, Wesley P

    2018-06-01

    Conduit-based nerve repairs are commonly used for small nerve gaps, whereas primary repair may be performed if there is no tension on nerve endings. We hypothesize that a conduit-based nerve coaptation device will improve nerve repair outcomes by avoiding sutures at the nerve repair site and utilizing the advantages of a conduit-based repair. The left sciatic nerves of female Sprague-Dawley rats were transected and repaired using a novel conduit-based device. The conduit-based device group was compared to a control group of rats that underwent a standard end-to-end microsurgical repair of the sciatic nerve. Animals underwent behavioral assessments at weekly intervals post-operatively using the sciatic functional index (SFI) test. Animals were sacrificed at four weeks to obtain motor axon counts from immunohistochemistry. A sub-group of animals were sacrificed immediately post repair to obtain MRI images. SFI scores were superior in rats which received conduit-based repairs compared to the control group. Motor axon counts distal to the injury in the device group at four weeks were statistically superior to the control group. MRI tractography was used to demonstrate repair of two nerves using the novel conduit device. A conduit-based nerve coaptation device avoids sutures at the nerve repair site and leads to improved outcomes in a rat model. Conduit-based nerve repair devices have the potential to standardize nerve repairs while improving outcomes.

  13. Product-based Safety Certification for Medical Devices Embedded Software.

    Science.gov (United States)

    Neto, José Augusto; Figueiredo Damásio, Jemerson; Monthaler, Paul; Morais, Misael

    2015-01-01

    Worldwide medical device embedded software certification practices are currently focused on manufacturing best practices. In Brazil, the national regulatory agency does not hold a local certification process for software-intensive medical devices and admits international certification (e.g. FDA and CE) from local and international industry to operate in the Brazilian health care market. We present here a product-based certification process as a candidate process to support the Brazilian regulatory agency ANVISA in medical device software regulation. Center of Strategic Technology for Healthcare (NUTES) medical device embedded software certification is based on a solid safety quality model and has been tested with reasonable success against the Class I risk device Generic Infusion Pump (GIP).

  14. BiFeO3 epitaxial thin films and devices: past, present and future

    Science.gov (United States)

    Sando, D.; Barthélémy, A.; Bibes, M.

    2014-11-01

    The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

  15. Status and Prospects of ZnO-Based Resistive Switching Memory Devices

    Science.gov (United States)

    Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

    2016-08-01

    In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

  16. High spin-polarization in ultrathin Co2MnSi/CoPd multilayers

    International Nuclear Information System (INIS)

    Galanakis, I.

    2015-01-01

    Half-metallic Co 2 MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co 2 MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co 2 MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices. - Highlights: • Ab-initio study of ultrathin Co 2 MnSi/CoPd multilayers. • Large values of spin-polarization at the Fermi are retained. • Route for novel spintronic/magnetoelectronic devices

  17. Critical components for diamond-based quantum coherent devices

    International Nuclear Information System (INIS)

    Greentree, Andrew D; Olivero, Paolo; Draganski, Martin; Trajkov, Elizabeth; Rabeau, James R; Reichart, Patrick; Gibson, Brant C; Rubanov, Sergey; Huntington, Shane T; Jamieson, David N; Prawer, Steven

    2006-01-01

    The necessary elements for practical devices exploiting quantum coherence in diamond materials are summarized, and progress towards their realization documented. A brief review of future prospects for diamond-based devices is also provided

  18. Carbon-Nanotube-Based Thermoelectric Materials and Devices.

    Science.gov (United States)

    Blackburn, Jeffrey L; Ferguson, Andrew J; Cho, Chungyeon; Grunlan, Jaime C

    2018-03-01

    Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g -1 ) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Field-Based Experiential Learning Using Mobile Devices

    Science.gov (United States)

    Hilley, G. E.

    2015-12-01

    Technologies such as GPS and cellular triangulation allow location-specific content to be delivered by mobile devices, but no mechanism currently exists to associate content shared between locations in a way that guarantees the delivery of coherent and non-redundant information at every location. Thus, experiential learning via mobile devices must currently take place along a predefined path, as in the case of a self-guided tour. I developed a mobile-device-based system that allows a person to move through a space along a path of their choosing, while receiving information in a way that guarantees delivery of appropriate background and location-specific information without producing redundancy of content between locations. This is accomplished by coupling content to knowledge-concept tags that are noted as fulfilled when users take prescribed actions. Similarly, the presentation of the content is related to the fulfillment of these knowledge-concept tags through logic statements that control the presentation. Content delivery is triggered by mobile-device geolocation including GPS/cellular navigation, and sensing of low-power Bluetooth proximity beacons. Together, these features implement a process that guarantees a coherent, non-redundant educational experience throughout a space, regardless of a learner's chosen path. The app that runs on the mobile device works in tandem with a server-side database and file-serving system that can be configured through a web-based GUI, and so content creators can easily populate and configure content with the system. Once the database has been updated, the new content is immediately available to the mobile devices when they arrive at the location at which content is required. Such a system serves as a platform for the development of field-based geoscience educational experiences, in which students can organically learn about core concepts at particular locations while individually exploring a space.

  20. Voltage-Controlled Reconfigurable Spin-Wave Nanochannels and Logic Devices

    Science.gov (United States)

    Rana, Bivas; Otani, YoshiChika

    2018-01-01

    Propagating spin waves (SWs) promise to be a potential information carrier in future spintronics devices with lower power consumption. Here, we propose reconfigurable nanochannels (NCs) generated by voltage-controlled magnetic anisotropy (VCMA) in an ultrathin ferromagnetic waveguide for SW propagation. Numerical micromagnetic simulations are performed to demonstrate the confinement of magnetostatic forward volumelike spin waves in NCs by VCMA. We demonstrate that the NCs, with a width down to a few tens of a nanometer, can be configured either into a straight or curved structure on an extended SW waveguide. The key advantage is that either a single NC or any combination of a number of NCs can be easily configured by VCMA for simultaneous propagation of SWs either with the same or different wave vectors according to our needs. Furthermore, we demonstrate the logic operation of a voltage-controlled magnonic xnor and universal nand gate and propose a voltage-controlled reconfigurable SW switch for the development of a multiplexer and demultiplexer. We find that the NCs and logic devices can even be functioning in the absence of the external-bias magnetic field. These results are a step towards the development of all-voltage-controlled magnonic devices with an ultralow power consumption.

  1. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  2. Silicon spintronics: Progress and challenges

    International Nuclear Information System (INIS)

    Sverdlov, Viktor; Selberherr, Siegfried

    2015-01-01

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized

  3. Co-Doped ZnO nanoparticles: minireview.

    Science.gov (United States)

    Djerdj, Igor; Jaglicić, Zvonko; Arcon, Denis; Niederberger, Markus

    2010-07-01

    Diluted magnetic semiconductors with a Curie temperature exceeding 300 K are promising candidates for spintronic devices and spin-based electronic technologies. We review recent achievements in the field of one of them: Co-doped ZnO at the nanoparticulate scale.

  4. Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

    Science.gov (United States)

    Wang, K.; Sanderink, J. G. M.; Bolhuis, T.; van der Wiel, W. G.; de Jong, M. P.

    2015-01-01

    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators. PMID:26486931

  5. Defective aluminium nitride nanotubes: a new way for spintronics? A density functional study

    International Nuclear Information System (INIS)

    Simeoni, M; Santucci, S; Picozzi, S; Delley, B

    2006-01-01

    The structural and electronic properties (in terms of Mulliken charges, density of states and band structures) of pristine and defective (10,0) AlN nanotubes have been calculated within density functional theory. The results show that, in several defective tubes, a spontaneous spin-polarization arises, due to the presence of spin-split flat bands close to the Fermi level, with a strong localization of the corresponding electronic states and of the magnetic moments. The highest positive spin-magnetization (3 μ B per cell) is found for the vacancy in the Al site, while the other magnetic tubes (the vacancy in N, C and O substitutional for N and Al, respectively) show a magnetization of only 1 μ B per cell. The spontaneous magnetization of some defective tubes might open the way to their use for spintronic applications

  6. High spin-polarization in ultrathin Co{sub 2}MnSi/CoPd multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Galanakis, I., E-mail: galanakis@upatras.gr

    2015-03-01

    Half-metallic Co{sub 2}MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co{sub 2}MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co{sub 2}MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices. - Highlights: • Ab-initio study of ultrathin Co{sub 2}MnSi/CoPd multilayers. • Large values of spin-polarization at the Fermi are retained. • Route for novel spintronic/magnetoelectronic devices.

  7. Rashba and Dresselhaus Couplings in Halide Perovskites: Accomplishments and Opportunities for Spintronics and Spin-Orbitronics.

    Science.gov (United States)

    Kepenekian, Mikaël; Even, Jacky

    2017-07-20

    In halide hybrid organic-inorganic perovskites (HOPs), spin-orbit coupling (SOC) presents a well-documented large influence on band structure. However, SOC may also present more exotic effects, such as Rashba and Dresselhaus couplings. In this Perspective, we start by recalling the main features of this effect and what makes HOP materials ideal candidates for the generation and tuning of spin-states. Then, we detail the main spectroscopy techniques able to characterize these effects and their application to HOPs. Finally, we discuss potential applications in spintronics and in spin-orbitronics in those nonmagnetic systems, which would complete the skill set of HOPs and perpetuate their ride on the crest of the wave of popularity started with optoelectronics and photovoltaics.

  8. Power Management of MEMS-Based Storage Devices for Mobile Systems

    NARCIS (Netherlands)

    Khatib, M.G.; Hartel, Pieter H.

    2008-01-01

    Because of its small form factor, high capacity, and expected low cost, MEMS-based storage is a suitable storage technology for mobile systems. MEMS-based storage devices should also be energy efficient for deployment in mobile systems. The problem is that MEMS-based storage devices are mechanical,

  9. Ferromagnets as pure spin current generators and detectors

    Science.gov (United States)

    Qu, Danru; Miao, Bingfeng; Chien, Chia -Ling; Huang, Ssu -Yen

    2015-09-08

    Provided is a spintronics device. The spintronics can include a ferromagnetic metal layer, a positive electrode disposed on a first surface portion of the ferromagnetic metal layer, and a negative electrode disposed on a second surface portion of the ferromagnetic metal.

  10. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    Science.gov (United States)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  11. Reengineering a PC-based System into the Mobile Device Product Line

    DEFF Research Database (Denmark)

    Zhang, Weishan; Jarzabek, Stanislaw; Loughran, Neil

    2003-01-01

    There is a growing demand to port existing PC-based software systems to mobile device platforms. Systems running on mobile devices share basic characteristics with their PC-based counterparts, but differ from them in details of user interfaces, application models, etc. Systems running on mobile...... devices must also perform well using less memory than PC-based systems. Mobile devices themselves are different from each other in many ways, too. We describe how we made an existing PC-based City Guide System available on a wide range of mobile devices, in a cost-effective way. We applied "reengineering...... into a product line architecture" approach to achieve the goal. Our product line architecture facilitates reuse via generation. We generate specific City Guide Systems for target platforms including PC, Pocket PC and other mobile devices, from generic meta-components that form the City Guide System product line...

  12. 2-D tiles declustering method based on virtual devices

    Science.gov (United States)

    Li, Zhongmin; Gao, Lu

    2009-10-01

    Generally, 2-D spatial data are divided as a series of tiles according to the plane grid. To satisfy the effect of vision, the tiles in the query window including the view point would be displayed quickly at the screen. Aiming at the performance difference of real storage devices, we propose a 2-D tiles declustering method based on virtual device. Firstly, we construct a group of virtual devices which have same storage performance and non-limited capacity, then distribute the tiles into M virtual devices according to the query window of 2-D tiles. Secondly, we equably map the tiles in M virtual devices into M equidistant intervals in [0, 1) using pseudo-random number generator. Finally, we devide [0, 1) into M intervals according to the tiles distribution percentage of every real storage device, and distribute the tiles in each interval in the corresponding real storage device. We have designed and realized a prototype GlobeSIGht, and give some related test results. The results show that the average response time of each tile in the query window including the view point using 2-D tiles declustering method based on virtual device is more efficient than using other methods.

  13. Ambient Sound-Based Collaborative Localization of Indeterministic Devices

    NARCIS (Netherlands)

    Kamminga, Jacob Wilhelm; Le Viet Duc, L Duc; Havinga, Paul J.M.

    2016-01-01

    Localization is essential in wireless sensor networks. To our knowledge, no prior work has utilized low-cost devices for collaborative localization based on only ambient sound, without the support of local infrastructure. The reason may be the fact that most low-cost devices are indeterministic and

  14. Advanced Materials for Health Monitoring with Skin-Based Wearable Devices.

    Science.gov (United States)

    Jin, Han; Abu-Raya, Yasmin Shibli; Haick, Hossam

    2017-06-01

    Skin-based wearable devices have a great potential that could result in a revolutionary approach to health monitoring and diagnosing disease. With continued innovation and intensive attention to the materials and fabrication technologies, development of these healthcare devices is progressively encouraged. This article gives a concise, although admittedly non-exhaustive, didactic review of some of the main concepts and approaches related to recent advances and developments in the scope of skin-based wearable devices (e.g. temperature, strain, biomarker-analysis werable devices, etc.), with an emphasis on emerging materials and fabrication techniques in the relevant fields. To give a comprehensive statement, part of the review presents and discusses different aspects of these advanced materials, such as the sensitivity, biocompatibility and durability as well as the major approaches proposed for enhancing their chemical and physical properties. A complementary section of the review linking these advanced materials with wearable device technologies is particularly specified. Some of the strong and weak points in development of each wearable material/device are highlighted and criticized. Several ideas regarding further improvement of skin-based wearable devices are also discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Highly air stable passivation of graphene based field effect devices.

    Science.gov (United States)

    Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

    2015-02-28

    The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

  16. Scanning-SQUID investigation of spin-orbit torque acting on yttrium iron garnet devices

    Science.gov (United States)

    Rosenberg, Aaron J.; Jermain, Colin L.; Aradhya, Sriharsha V.; Brangham, Jack T.; Nowack, Katja C.; Kirtley, John R.; Yang, Fengyuan; Ralph, Daniel C.; Moler, Kathryn A.

    Successful manipulation of electrically insulating magnets, such as yttrium iron garnet, by by current-driven spin-orbit torques could provide a highly efficient platform for spintronic memory. Compared to devices fabricated using magnetic metals, magnetic insulators have the advantage of the ultra-low magnetic damping and the elimination of shunting currents in the magnet that reduce the torque efficiency. Here, we apply current in the spin Hall metal β-Ta to manipulate the magnetic orientation of micron-sized, electrically-insulating yttrium iron garnet devices. We do not observe spin-torque switching even for applied currents well above the critical current expected in a macrospin switching model. This suggests either inefficient transfer of spin torque at our Ta/YIG interface or a breakdown of the macrospin approximation. This work is supported by FAME, one of six centers of STARnet sponsored by MARCO and DARPA. The SQUID microscope and sensors were developed with support from the NSF-sponsored Center NSF-NSEC 0830228, and from NSF IMR-MIP 0957616.

  17. Mobile device-based optical instruments for agriculture

    Science.gov (United States)

    Sumriddetchkajorn, Sarun

    2013-05-01

    Realizing that a current smart-mobile device such as a cell phone and a tablet can be considered as a pocket-size computer embedded with a built-in digital camera, this paper reviews and demonstrates on how a mobile device can be specifically functioned as a portable optical instrument for agricultural applications. The paper highlights several mobile device-based optical instruments designed for searching small pests, measuring illumination level, analyzing spectrum of light, identifying nitrogen status in the rice field, estimating chlorine in water, and determining ripeness level of the fruit. They are suitable for individual use as well as for small and medium enterprises.

  18. Double-Sided Electrochromic Device Based on Metal-Organic Frameworks.

    Science.gov (United States)

    Mjejri, Issam; Doherty, Cara M; Rubio-Martinez, Marta; Drisko, Glenna L; Rougier, Aline

    2017-11-22

    Devices displaying controllably tunable optical properties through an applied voltage are attractive for smart glass, mirrors, and displays. Electrochromic material development aims to decrease power consumption while increasing the variety of attainable colors, their brilliance, and their longevity. We report the first electrochromic device constructed from metal organic frameworks (MOFs). Two MOF films, HKUST-1 and ZnMOF-74, are assembled so that the oxidation of one corresponds to the reduction of the other, allowing the two sides of the device to simultaneously change color. These MOF films exhibit cycling stability unrivaled by other MOFs and a significant optical contrast in a lithium-based electrolyte. HKUST-1 reversibly changed from bright blue to light blue and ZnMOF-74 from yellow to brown. The electrochromic device associates the two MOF films via a PMMA-lithium based electrolyte membrane. The color-switching of these MOFs does not arise from an organic-linker redox reaction, signaling unexplored possibilities for electrochromic MOF-based materials.

  19. Spin-current diode with a ferromagnetic semiconductor

    International Nuclear Information System (INIS)

    Sun, Qing-Feng; Xie, X. C.

    2015-01-01

    Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

  20. Internet-Based Device-Assisted Remote Monitoring of Cardiovascular Implantable Electronic Devices

    Science.gov (United States)

    Pron, G; Ieraci, L; Kaulback, K

    2012-01-01

    Executive Summary Objective The objective of this Medical Advisory Secretariat (MAS) report was to conduct a systematic review of the available published evidence on the safety, effectiveness, and cost-effectiveness of Internet-based device-assisted remote monitoring systems (RMSs) for therapeutic cardiac implantable electronic devices (CIEDs) such as pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. The MAS evidence-based review was performed to support public financing decisions. Clinical Need: Condition and Target Population Sudden cardiac death (SCD) is a major cause of fatalities in developed countries. In the United States almost half a million people die of SCD annually, resulting in more deaths than stroke, lung cancer, breast cancer, and AIDS combined. In Canada each year more than 40,000 people die from a cardiovascular related cause; approximately half of these deaths are attributable to SCD. Most cases of SCD occur in the general population typically in those without a known history of heart disease. Most SCDs are caused by cardiac arrhythmia, an abnormal heart rhythm caused by malfunctions of the heart’s electrical system. Up to half of patients with significant heart failure (HF) also have advanced conduction abnormalities. Cardiac arrhythmias are managed by a variety of drugs, ablative procedures, and therapeutic CIEDs. The range of CIEDs includes pacemakers (PMs), implantable cardioverter-defibrillators (ICDs), and cardiac resynchronization therapy (CRT) devices. Bradycardia is the main indication for PMs and individuals at high risk for SCD are often treated by ICDs. Heart failure (HF) is also a significant health problem and is the most frequent cause of hospitalization in those over 65 years of age. Patients with moderate to severe HF may also have cardiac arrhythmias, although the cause may be related more to heart pump or haemodynamic failure. The presence of HF, however

  1. Spin injection into GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Endres, Bernhard

    2013-11-01

    In this work spin injection into GaAs from Fe and (Ga,Mn)As was investigated. For the realization of any spintronic device the detailed knowledge about the spin lifetime, the spatial distribution of spin-polarized carriers and the influence of electric fields is essential. In the present work all these aspects have been analyzed by optical measurements of the polar magneto-optic Kerr effect (pMOKE) at the cleaved edge of the samples. Besides the attempt to observe spin pumping and thermal spin injection into n-GaAs the spin solar cell effect is demonstrated, a novel mechanism for the optical generation of spins in semiconductors with potential for future spintronic applications. Also important for spin-based devices as transistors is the presented realization of electrical spin injection into a two-dimensional electron gas.

  2. Spin-current-controlled modulation of the magnon spin conductance in a three-terminal magnon transistor

    NARCIS (Netherlands)

    Cornelissen, L. J.; Liu, J.; van Wees, B.J.; Duine, R. A.

    2018-01-01

    Efficient manipulation of magnon spin transport is crucial for developing magnon-based spintronic devices. In this Letter, we provide proof of principle of a method for modulating the diffusive transport of thermal magnons in an yttrium iron garnet channel between injector and detector contacts. The

  3. Unconventional supercapacitors from nanocarbon-based electrode materials to device configurations.

    Science.gov (United States)

    Liu, Lili; Niu, Zhiqiang; Chen, Jun

    2016-07-25

    As energy storage devices, supercapacitors that are also called electrochemical capacitors possess high power density, excellent reversibility and long cycle life. The recent boom in electronic devices with different functions in transparent LED displays, stretchable electronic systems and artificial skin has increased the demand for supercapacitors to move towards light, thin, integrated macro- and micro-devices with transparent, flexible, stretchable, compressible and/or wearable abilities. The successful fabrication of such supercapacitors depends mainly on the preparation of innovative electrode materials and the design of unconventional supercapacitor configurations. Tremendous research efforts have been recently made to design and construct innovative nanocarbon-based electrode materials and supercapacitors with unconventional configurations. We review here recent developments in supercapacitors from nanocarbon-based electrode materials to device configurations. The advances in nanocarbon-based electrode materials mainly include the assembly technologies of macroscopic nanostructured electrodes with different dimensions of carbon nanotubes/nanofibers, graphene, mesoporous carbon, activated carbon, and their composites. The electrodes with macroscopic nanostructured carbon-based materials overcome the issues of low conductivity, poor mechanical properties, and limited dimensions that are faced by conventional methods. The configurational design of advanced supercapacitor devices is presented with six types of unconventional supercapacitor devices: flexible, micro-, stretchable, compressible, transparent and fiber supercapacitors. Such supercapacitors display unique configurations and excellent electrochemical performance at different states such as bending, stretching, compressing and/or folding. For example, all-solid-state simplified supercapacitors that are based on nanostructured graphene composite paper are able to maintain 95% of the original capacity at

  4. Intrinsic quantum anomalous hall effect in a two-dimensional anilato-based lattice.

    Science.gov (United States)

    Ni, Xiaojuan; Jiang, Wei; Huang, Huaqing; Jin, Kyung-Hwan; Liu, Feng

    2018-06-13

    Using first-principles calculations, we predict an intrinsic quantum anomalous Hall (QAH) state in a monolayer anilato-based metal-organic framework M2(C6O4X2)3 (M = Mn and Tc, X = F, Cl, Br and I). The spin-orbit coupling of M d orbitals opens a nontrivial band gap up to 18 meV at the Dirac point. The electron counting rule is used to explain the intrinsic nature of the QAH state. The calculated nonzero Chern number, gapless edge states and quantized Hall conductance all confirm the nontrivial topological properties in the anilato-based lattice. Our findings provide an organic materials platform for the realization of the QAH effect without the need for magnetic and charge doping, which are highly desirable for the development of low-energy-consumption spintronic devices.

  5. Design of an SolidWorks-based household substrate cultivation device

    Science.gov (United States)

    Yi, Guo; Yueying, Wang

    2018-03-01

    Rapid urbanization has caused increasingly severe environmental problems and smaller tillable land area. Even worse, negative reports on vegetable production are repeatedly found. In this case, home gardening has become an inexorable trend. To meet demand for vegetable cultivation in the home environment, an SolidWorks-based household substrate cultivation device has been designed. This device is composed of the cultivation tank, upright post, base, irrigation system, supplemental lighting system and control system. The household substrate cultivation device manufactured based on the design results has shown in practice that this device features an esthetic appearance, low cost, automatic irrigation and lighting supplementation, good vegetable growing conditions, full of ornamental value and practicability and thus is suitable for vegetable growing in the home environment. Hence it has a higher promotion value in the home gardening field.

  6. Optimizing MEMS-Based Storage Devices for Mobile Battery-Powered Systems

    NARCIS (Netherlands)

    Khatib, M.G.; Hartel, Pieter H.

    An emerging storage technology, called MEMS-based storage, promises nonvolatile storage devices with ultrahigh density, high rigidity, a small form factor, and low cost. For these reasons, MEMS-based storage devices are suitable for battery-powered mobile systems such as PDAs. For deployment in such

  7. Proton irradiation effects on gallium nitride-based devices

    Science.gov (United States)

    Karmarkar, Aditya P.

    Proton radiation effects on state-of-the-art gallium nitride-based devices were studied using Schottky diodes and high electron-mobility transistors. The device degradation was studied over a wide range of proton fluences. This study allowed for a correlation between proton irradiation effects between different types of devices and enhanced the understanding of the mechanisms responsible for radiation damage in GaN-based devices. Proton irradiation causes reduced carrier concentration and increased series resistance and ideality factor in Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher non-ionizing energy loss. The displacement damage in Schottky diodes recovers during annealing. High electron-mobility transistors exhibit extremely high radiation tolerance, continuing to perform up to a fluence of ˜1014 cm-2 of 1.8-MeV protons. Proton irradiation creates defect complexes in the thin-film structure. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal by the defect centers are the primary damage mechanisms. Interface disorder at either the Schottky or the Ohmic contact plays a relatively unimportant part in overall device degradation in both Schottky diodes and high electron-mobility transistors.

  8. Efficient Signature Based Malware Detection on Mobile Devices

    Directory of Open Access Journals (Sweden)

    Deepak Venugopal

    2008-01-01

    Full Text Available The threat of malware on mobile devices is gaining attention recently. It is important to provide security solutions to these devices before these threats cause widespread damage. However, mobile devices have severe resource constraints in terms of memory and power. Hence, even though there are well developed techniques for malware detection on the PC domain, it requires considerable effort to adapt these techniques for mobile devices. In this paper, we outline the considerations for malware detection on mobile devices and propose a signature based malware detection method. Specifically, we detail a signature matching algorithm that is well suited for use in mobile device scanning due to its low memory requirements. Additionally, the matching algorithm is shown to have high scanning speed which makes it unobtrusive to users. Our evaluation and comparison study with the well known Clam-AV scanner shows that our solution consumes less than 50% of the memory used by Clam-AV while maintaining a fast scanning rate.

  9. Fiber Bragg grating based arterial localization device

    Science.gov (United States)

    Ho, Siu Chun Michael; Li, Weijie; Razavi, Mehdi; Song, Gangbing

    2017-06-01

    A critical first step to many surgical procedures is locating and gaining access to a patients vascular system. Vascular access allows the deployment of other surgical instruments and also the monitoring of many physiological parameters. Current methods to locate blood vessels are predominantly based on the landmark technique coupled with ultrasound, fluoroscopy, or Doppler. However, even with experience and technological assistance, locating the required blood vessel is not always an easy task, especially with patients that present atypical anatomy or suffer from conditions such as weak pulsation or obesity that make vascular localization difficult. With recent advances in fiber optic sensors, there is an opportunity to develop a new tool that can make vascular localization safer and easier. In this work, the authors present a new fiber Bragg grating (FBG) based vascular access device that specializes in arterial localization. The device estimates the location towards a local artery based on the bending of a needle inserted near the tissue surrounding the artery. Experimental results obtained from an artificial circulatory loop and a mock artery show the device works best for lower angles of needle insertion and can provide an approximately 40° range of estimation towards the location of a pulsating source (e.g. an artery).

  10. A chiral-based magnetic memory device without a permanent magnet.

    Science.gov (United States)

    Ben Dor, Oren; Yochelis, Shira; Mathew, Shinto P; Naaman, Ron; Paltiel, Yossi

    2013-01-01

    Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices.

  11. Hydrazine-based deposition route for device-quality CIGS films

    International Nuclear Information System (INIS)

    Mitzi, David B.; Yuan, Min; Liu, Wei; Kellock, Andrew J.; Chey, S. Jay; Gignac, Lynne; Schrott, Alex G.

    2009-01-01

    A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C

  12. Hydrazine-based deposition route for device-quality CIGS films

    Energy Technology Data Exchange (ETDEWEB)

    Mitzi, David B. [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States)], E-mail: dmitzi@us.ibm.com; Yuan, Min; Liu, Wei [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States); Kellock, Andrew J [IBM Almaden Research Center, 650 Harry Rd, San Jose, CA 95120 (United States); Chey, S Jay; Gignac, Lynne; Schrott, Alex G [IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 (United States)

    2009-02-02

    A simple solution-based approach for depositing CIGS (Cu-In-Ga-Se/S) absorber layers is discussed, with an emphasis on film characterization, interfacial properties and integration into photovoltaic devices. The process involves incorporating all metal and chalcogenide components into a single hydrazine-based solution, spin coating a precursor film, and heat treating in an inert atmosphere, to form the desired CIGS film with up to micron-scaled film thickness and grain size. PV devices (glass/Mo/CIGS/CdS/i-ZnO/ITO) employing the spin-coated CIGS and using processing temperatures below 500 deg. C have yielded power conversion efficiencies of up to 10% (AM 1.5 illumination), without the need for a post-CIGS-deposition treatment in a gaseous Se source or a cyanide-based bath etch. Short-duration low-temperature (T < 200 deg. C ) oxygen treatment of completed devices is shown to have a positive impact on the performance of initially underperforming cells, thereby enabling better performance in devices prepared at temperatures below 500 deg. C.

  13. Magnetic Properties of Electrically Contacted Fe4 Molecular Magnets

    Science.gov (United States)

    Burgess, Jacob; Malavolti, Luigi; Lanzilotto, Valeria; Mannini, Matteo; Totti, Frederico; Ninova, Silviya; Yan, Shichao; Choi, Deung-Jang; Rolf-Pissarczyk, Steffen; Cornia, Andrea; Sessoli, Roberta; Loth, Sebastian

    2015-03-01

    Single molecule magnets (SMMs) are often large and fragile molecules. This poses challenges for the construction of SMM based spintronics. Device geometries with two electronic leads contacting a molecule may be explored via scanning tunneling microscopy (STM). The Fe4 molecule stands out as a robust, thermally evaporable SMM, making it ideal for such an experiment. Here we present the first STM investigations of individual Fe4 molecules thermally evaporated onto a monolayer of Cu2N on a Cu (100) crystal. Using inelastic electron tunneling spectroscopy (IETS), spin excitations in single Fe4 molecules can be detected at meV energies. Analysis using a Spin Hamiltonian allows extraction of magnetic properties of individual Fe4 molecules, and investigation of the influence of the electronic leads. The tip and sample induce small changes in the magnetic properties of Fe4 molecules, making Fe4 a promising candidate for the development of spintronics devices based on SMMs.

  14. Tuning spin-polarized transport in organic semiconductors

    Science.gov (United States)

    Mattana, Richard; Galbiati, Marta; Delprat, Sophie; Tatay, Sergio; Deranlot, Cyrile; Seneor, Pierre; Petroff, Frederic

    Molecular spintronics is an emerging research field at the frontier between organic chemistry and the spintronics. Compared to traditional inorganic materials molecules are flexible and can be easily tailored by chemical synthesis. Due to their theoretically expected very long spin lifetime, they were first only seen as the ultimate media for spintronics devices. It was recently that new spintronics tailoring could arise from the chemical versatility brought by molecules. The hybridization between a ferromagnet and molecules induces a spin dependent broadening and energy shifting of the molecular orbitals leading to an induced spin polarization on the first molecular layer. This spin dependent hybridization can be used to tailor the spin dependent transport in organic spintronics devices. We have studied vertical Co/Alq3/Co organic spin valves. The negative magnetoresistance observed is the signature of different coupling strengths at the top and bottom interfaces. We have then inserted an inorganic tunnel barrier at the bottom interface in order to suppress the spin-dependent hybridization. In this case we restore a positive magnetoresistance. This demonstrates that at the bottom Co/Alq3 interface a stronger coupling occurs which induces an inversion of the spin polarization.

  15. Electrochemical model of the polyaniline based organic memristive device

    International Nuclear Information System (INIS)

    Demin, V. A.; Erokhin, V. V.; Kashkarov, P. K.; Kovalchuk, M. V.

    2014-01-01

    The electrochemical organic memristive device with polyaniline active layer is a stand-alone device designed and realized for reproduction of some synapse properties in the innovative electronic circuits, including the neuromorphic networks capable for learning. In this work, a new theoretical model of the polyaniline memristive is presented. The developed model of organic memristive functioning was based on the detailed consideration of possible electrochemical processes occuring in the active zone of this device. Results of the calculation have demonstrated not only the qualitative explanation of the characteristics observed in the experiment but also the quantitative similarities of the resultant current values. It is shown how the memristive could behave at zero potential difference relative to the reference electrode. This improved model can establish a basis for the design and prediction of properties of more complicated circuits and systems (including stochastic ones) based on the organic memristive devices

  16. Electric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure

    Science.gov (United States)

    Heron, J. T.; Trassin, M.; Ashraf, K.; Gajek, M.; He, Q.; Yang, S. Y.; Nikonov, D. E.; Chu, Y.-H.; Salahuddin, S.; Ramesh, R.

    2011-11-01

    A reversal of magnetization requiring only the application of an electric field can lead to low-power spintronic devices by eliminating conventional magnetic switching methods. Here we show a nonvolatile, room temperature magnetization reversal determined by an electric field in a ferromagnet-multiferroic system. The effect is reversible and mediated by an interfacial magnetic coupling dictated by the multiferroic. Such electric-field control of a magnetoelectric device demonstrates an avenue for next-generation, low-energy consumption spintronics.

  17. Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection

    Energy Technology Data Exchange (ETDEWEB)

    Fedorov, G. E., E-mail: gefedorov@mail.ru; Stepanova, T. S.; Gazaliev, A. Sh.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N. [Moscow State Pedagogical University (Russian Federation)

    2016-12-15

    Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.

  18. Spin injection, transport, and read/write operation in spin-based MOSFET

    International Nuclear Information System (INIS)

    Saito, Yoshiaki; Marukame, Takao; Inokuchi, Tomoaki; Ishikawa, Mizue; Sugiyama, Hideyuki; Tanamoto, Tetsufumi

    2011-01-01

    We proposed a novel spin-based MOSFET 'Spin-Transfer-torque-Switching MOSFET (STS-MOSFET)' that offers non-volatile memory and transistor functions with complementary metal-oxide-semiconductor (CMOS) compatibility, high endurance and fast write time using STS. The STS-MOSFETs with Heusler alloy (Co 2 Fe 1 Al 0.5 Si 0.5 ) were prepared and reconfigurability of a novel spintronics-based MOSFET, STS-MOSFET, was successfully realized for the transport properties owing to reduction of the contact resistance in ferromagnetic metal/thin insulator tunnel barrier/Si junctions. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10 5 cycles. It was also clarified that the read characteristic can be improved in terms of MC ratio, however, is deteriorated in terms of the mobility by choosing connection configurations of the source and the drain in the STS-MOSFETs.

  19. Nanotube devices based crossbar architecture: toward neuromorphic computing

    International Nuclear Information System (INIS)

    Zhao, W S; Gamrat, C; Agnus, G; Derycke, V; Filoramo, A; Bourgoin, J-P

    2010-01-01

    Nanoscale devices such as carbon nanotube and nanowires based transistors, memristors and molecular devices are expected to play an important role in the development of new computing architectures. While their size represents a decisive advantage in terms of integration density, it also raises the critical question of how to efficiently address large numbers of densely integrated nanodevices without the need for complex multi-layer interconnection topologies similar to those used in CMOS technology. Two-terminal programmable devices in crossbar geometry seem particularly attractive, but suffer from severe addressing difficulties due to cross-talk, which implies complex programming procedures. Three-terminal devices can be easily addressed individually, but with limited gain in terms of interconnect integration. We show how optically gated carbon nanotube devices enable efficient individual addressing when arranged in a crossbar geometry with shared gate electrodes. This topology is particularly well suited for parallel programming or learning in the context of neuromorphic computing architectures.

  20. Spin-dependent electrical transport in Fe-MgO-Fe heterostructures

    Directory of Open Access Journals (Sweden)

    A A Shokri

    2016-09-01

    Full Text Available In this paper, spin-dependent electrical transport properties are investigated in a single-crystal magnetic tunnel junction (MTJ which consists of two ferromagnetic Fe electrodes separated by an MgO insulating barrier. These properties contain electric current, spin polarization and tunnel magnetoresistance (TMR. For this purpose, spin-dependent Hamiltonian is described for Δ1 and Δ5 bands in the transport direction. The transmission is calculated by Green's function formalism based on a single-band tight-binding approximation. The transport properties are investigated as a function of the barrier thickness in the limit of coherent tunneling. We have demonstrated that dependence of the TMR on the applied voltage and barrier thickness. Our numerical results may be useful for designing of spintronic devices. The numerical results may be useful in designing of spintronic devices.

  1. Control and manipulation of antiferromagnetic skyrmions in racetrack

    Science.gov (United States)

    Xia, Haiyan; Jin, Chendong; Song, Chengkun; Wang, Jinshuai; Wang, Jianbo; Liu, Qingfang

    2017-12-01

    Controllable manipulations of magnetic skyrmions are essential for next-generation spintronic devices. Here, the duplication and merging of skyrmions, as well as logical AND and OR functions, are designed in antiferromagnetic (AFM) materials with a cusp or smooth Y-junction structures. The operational time are in the dozens of picoseconds, enabling ultrafast information processing. A key factor for the successful operation is the relatively complex Y-junction structures, where domain walls propagate through in a controlled manner, without significant risks of pinning, vanishing or unwanted depinning of existing domain walls, as well as the nucleation of new domain walls. The motions of a multi-bit, namely the motion of an AFM skyrmion-chain in racetrack, are also investigated. Those micromagnetic simulations may contribute to future AFM skyrmion-based spintronic devices, such as nanotrack memory, logic gates and other information processes.

  2. A microfluidic device based on an evaporation-driven micropump

    NARCIS (Netherlands)

    Nie, C.; Frijns, A.J.H.; Mandamparambil, R.; Toonder, J.M.J. den

    2015-01-01

    In this paper we introduce a microfluidic device ultimately to be applied as a wearable sweat sensor. We show proof-of-principle of the microfluidic functions of the device, namely fluid collection and continuous fluid flow pumping. A filter-paper based layer, that eventually will form the interface

  3. Review on microfluidic paper-based analytical devices towards commercialisation.

    Science.gov (United States)

    Akyazi, Tugce; Basabe-Desmonts, Lourdes; Benito-Lopez, Fernando

    2018-02-25

    Paper-based analytical devices introduce an innovative platform technology for fluid handling and analysis, with wide range of applications, promoting low cost, ease of fabrication/operation and equipment independence. This review gives a general overview on the fabrication techniques reported to date, revealing and discussing their weak points as well as the newest approaches in order to overtake current mass production limitations and therefore commercialisation. Moreover, this review aims especially to highlight novel technologies appearing in literature for the effective handling and controlling of fluids. The lack of flow control is the main problem of paper-based analytical devices, which generates obstacles for marketing and slows down the transition of paper devices from the laboratory into the consumers' hands. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Device-independent bit commitment based on the CHSH inequality

    International Nuclear Information System (INIS)

    Aharon, N; Massar, S; Pironio, S; Silman, J

    2016-01-01

    Bit commitment and coin flipping occupy a unique place in the device-independent landscape, as the only device-independent protocols thus far suggested for these tasks are reliant on tripartite GHZ correlations. Indeed, we know of no other bipartite tasks, which admit a device-independent formulation, but which are not known to be implementable using only bipartite nonlocality. Another interesting feature of these protocols is that the pseudo-telepathic nature of GHZ correlations—in contrast to the generally statistical character of nonlocal correlations, such as those arising in the violation of the CHSH inequality—is essential to their formulation and analysis. In this work, we present a device-independent bit commitment protocol based on CHSH testing, which achieves the same security as the optimal GHZ-based protocol, albeit at the price of fixing the time at which Alice reveals her commitment. The protocol is analyzed in the most general settings, where the devices are used repeatedly and may have long-term quantum memory. We also recast the protocol in a post-quantum setting where both honest and dishonest parties are restricted only by the impossibility of signaling, and find that overall the supra-quantum structure allows for greater security. (paper)

  5. An UV photochromic memory effect in proton-based WO3 electrochromic devices

    International Nuclear Information System (INIS)

    Zhang Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

    2008-01-01

    We report an UV photochromic memory effect on a standard proton-based WO 3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices

  6. An UV photochromic memory effect in proton-based WO3 electrochromic devices

    Science.gov (United States)

    Zhang, Yong; Lee, S.-H.; Mascarenhas, A.; Deb, S. K.

    2008-11-01

    We report an UV photochromic memory effect on a standard proton-based WO3 electrochromic device. It exhibits two memory states, associated with the colored and bleached states of the device, respectively. Such an effect can be used to enhance device performance (increasing the dynamic range), re-energize commercial electrochromic devices, and develop memory devices.

  7. Biomedical device prototype based on small scale hydrodynamic cavitation

    Science.gov (United States)

    Ghorbani, Morteza; Sozer, Canberk; Alcan, Gokhan; Unel, Mustafa; Ekici, Sinan; Uvet, Huseyin; Koşar, Ali

    2018-03-01

    This study presents a biomedical device prototype based on small scale hydrodynamic cavitation. The application of small scale hydrodynamic cavitation and its integration to a biomedical device prototype is offered as an important alternative to other techniques, such as ultrasound therapy, and thus constitutes a local, cheap, and energy-efficient solution, for urinary stone therapy and abnormal tissue ablation (e.g., benign prostate hyperplasia (BPH)). The destructive nature of bubbly, cavitating, flows was exploited, and the potential of the prototype was assessed and characterized. Bubbles generated in a small flow restrictive element (micro-orifice) based on hydrodynamic cavitation were utilized for this purpose. The small bubbly, cavitating, flow generator (micro-orifice) was fitted to a small flexible probe, which was actuated with a micromanipulator using fine control. This probe also houses an imaging device for visualization so that the emerging cavitating flow could be locally targeted to the desired spot. In this study, the feasibility of this alternative treatment method and its integration to a device prototype were successfully accomplished.

  8. Biomedical device prototype based on small scale hydrodynamic cavitation

    Directory of Open Access Journals (Sweden)

    Morteza Ghorbani

    2018-03-01

    Full Text Available This study presents a biomedical device prototype based on small scale hydrodynamic cavitation. The application of small scale hydrodynamic cavitation and its integration to a biomedical device prototype is offered as an important alternative to other techniques, such as ultrasound therapy, and thus constitutes a local, cheap, and energy-efficient solution, for urinary stone therapy and abnormal tissue ablation (e.g., benign prostate hyperplasia (BPH. The destructive nature of bubbly, cavitating, flows was exploited, and the potential of the prototype was assessed and characterized. Bubbles generated in a small flow restrictive element (micro-orifice based on hydrodynamic cavitation were utilized for this purpose. The small bubbly, cavitating, flow generator (micro-orifice was fitted to a small flexible probe, which was actuated with a micromanipulator using fine control. This probe also houses an imaging device for visualization so that the emerging cavitating flow could be locally targeted to the desired spot. In this study, the feasibility of this alternative treatment method and its integration to a device prototype were successfully accomplished.

  9. Creating compact and microscale features in paper-based devices by laser cutting.

    Science.gov (United States)

    Mahmud, Md Almostasim; Blondeel, Eric J M; Kaddoura, Moufeed; MacDonald, Brendan D

    2016-11-14

    In this work we describe a fabrication method to create compact and microscale features in paper-based microfluidic devices using a CO 2 laser cutting/engraving machine. Using this method we are able to produce the smallest features with the narrowest barriers yet reported for paper-based microfluidic devices. The method uses foil backed paper as the base material and yields inexpensive paper-based devices capable of using small fluid sample volumes and thus small reagent volumes, which is also suitable for mass production. The laser parameters (power and laser head speed) were adjusted to minimize the width of hydrophobic barriers and we were able to create barriers with a width of 39 ± 15 μm that were capable of preventing cross-barrier bleeding. We generated channels with a width of 128 ± 30 μm, which we found to be the physical limit for small features in the chromatography paper we used. We demonstrate how miniaturizing of paper-based microfluidic devices enables eight tests on a single bioassay device using only 2 μL of sample fluid volume.

  10. A magnetorheological fluid-based multifunctional haptic device for vehicular instrument controls

    International Nuclear Information System (INIS)

    Han, Young-Min; Kim, Chan-Jung; Choi, Seung-Bok

    2009-01-01

    This paper presents control performances of a magnetorheological (MR) fluid-based multifunctional haptic device which is applicable to vehicular instrument controls. By combining in-vehicle functions into a single device, the proposed haptic device can transmit various reflection forces for each comfort function to a driver without requiring the driver's visual attention. As a multifunctional haptic device, a MR knob is proposed in this work and then devised to be capable of both rotary and push motions with a single knob. Under consideration of the spatial limitations of vehicle dashboards, design parameters are optimally determined by finite element analysis, and the objective function is to maximize a relative control torque. The proposed haptic device is then manufactured, and in-vehicle comfort functions are constructed in a virtual environment which makes the functions to communicate with the haptic device. Subsequently, a feed-forward controller using torque/force maps is formulated for the force tracking control. Control performances such as reflection force of the haptic device are experimentally evaluated via the torque/force map-based feed-forward controller

  11. Development of Smartphone based Optical Device

    Science.gov (United States)

    Jung, Youngkee

    Due to the economy of scale, smartphones are becoming more affordable while their computing powers are increasing dramatically every year. Here we propose a ubiquitous and portable instrument for analyte quantitation by utilizing the characteristics of typical smartphone imaging system and specific design of transducers for different applications. Three testbeds included in this work are: quantitative colorimetric analysis, ultra-low radiant flux detection, and portable spectrometer. As a proof-of-principle for each device, 3-D printed cradle and theoretical simulation with MATLAB have been implemented. First example utilizes the native CMOS camera with their respective RGB channel data and perform an analyte quantitation for typical lateral flow devices (LFD). Histogram analysis method has been employed to detect the analyte concentration and calibration results show good correlation between perceived color change and analyte concentration. The second example shows the possibility of using a conventional CMOS camera for pico Watt level photon flux detection. Since most of consumer grade CMOS cameras cannot detect this level of light intensity and their dark current are relatively higher, a new algorithm called NREA (Noise Reduction by Ensemble Averaging) algorithm was developed to effectively reduce the noise level and increase the SNR (signal to noise ratio). This technique is effective for bioanalytical assays that has lower flux intensity such as fluorescence and luminescence. As a proof-of-principle, we tested the device with Pseudomonas fluorescens M3A and achieved a limit of detection of high 10? CFU/ml. In addition to basic schematic of detection model, another experiment with a silicon photomultiplier (SiPM) has been studied for more sensitive light detectability. Based on both the laser experiment and tw bioluminescent experiments, named Pseudomonas fluorescens M3A and NanoLuc, we found that the miniSM based device has a superior ability than the

  12. Supramolecular luminescence from oligofluorenol-based supramolecular polymer semiconductors.

    Science.gov (United States)

    Zhang, Guang-Wei; Wang, Long; Xie, Ling-Hai; Lin, Jin-Yi; Huang, Wei

    2013-11-13

    Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR) and dynamic light scattering (DLS). The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band) at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics.

  13. A quantum computer based on recombination processes in microelectronic devices

    International Nuclear Information System (INIS)

    Theodoropoulos, K; Ntalaperas, D; Petras, I; Konofaos, N

    2005-01-01

    In this paper a quantum computer based on the recombination processes happening in semiconductor devices is presented. A 'data element' and a 'computational element' are derived based on Schokley-Read-Hall statistics and they can later be used to manifest a simple and known quantum computing process. Such a paradigm is shown by the application of the proposed computer onto a well known physical system involving traps in semiconductor devices

  14. Using of the Modern Semiconductor Devices Based on the SiC

    Directory of Open Access Journals (Sweden)

    Pavel Drabek

    2008-01-01

    Full Text Available This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors.

  15. Bio-sample detection on paper-based devices with inkjet printer-sprayed reagents.

    Science.gov (United States)

    Liang, Wun-Hong; Chu, Chien-Hung; Yang, Ruey-Jen

    2015-12-01

    The reagent required for bio-sample detection on paper-based analytical devices is generally introduced manually using a pipette. Such an approach is time-consuming; particularly if a large number of devices are required. Automated methods provide a far more convenient solution for large-scale production, but incur a substantial cost. Accordingly, the present study proposes a low-cost method for the paper-based analytical devices in which the biochemical reagents are sprayed onto the device directly using a modified commercial inkjet printer. The feasibility of the proposed method is demonstrated by performing aspartate aminotransferase (AST) and alanine aminotransferase (ALT) tests using simple two-dimensional (2D) paper-based devices. In both cases, the reaction process is analyzed using an image-processing-based colorimetric method. The experimental results show that for AST detection within the 0-105 U/l concentration range, the optimal observation time is around four minutes, while for ALT detection in the 0-125 U/l concentration range, the optimal observation time is approximately one minute. Finally, for both samples, the detection performance of the sprayed-reagent analytical devices is insensitive to the glucose concentration. Copyright © 2015 Elsevier B.V. All rights reserved.

  16. Mini array of quantum Hall devices based on epitaxial graphene

    International Nuclear Information System (INIS)

    Novikov, S.; Lebedeva, N.; Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A.

    2016-01-01

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R H,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R H,2  = 2 h/e 2 was smaller than the relative standard uncertainty of the measurement (<1 × 10 −7 ) limited by the used resistance bridge.

  17. A point-based rendering approach for real-time interaction on mobile devices

    Institute of Scientific and Technical Information of China (English)

    LIANG XiaoHui; ZHAO QinPing; HE ZhiYing; XIE Ke; LIU YuBo

    2009-01-01

    Mobile device is an Important interactive platform. Due to the limitation of computation, memory, display area and energy, how to realize the efficient and real-time interaction of 3D models based on mobile devices is an important research topic. Considering features of mobile devices, this paper adopts remote rendering mode and point models, and then, proposes a transmission and rendering approach that could interact in real time. First, improved simplification algorithm based on MLS and display resolution of mobile devices is proposed. Then, a hierarchy selection of point models and a QoS transmission control strategy are given based on interest area of operator, interest degree of object in the virtual environment and rendering error. They can save the energy consumption. Finally, the rendering and interaction of point models are completed on mobile devices. The experiments show that our method is efficient.

  18. Fully transparent thin-film transistor devices based on SnO2 nanowires.

    Science.gov (United States)

    Dattoli, Eric N; Wan, Qing; Guo, Wei; Chen, Yanbin; Pan, Xiaoqing; Lu, Wei

    2007-08-01

    We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates.

  19. Ubi-RKE: A Rhythm Key Based Encryption Scheme for Ubiquitous Devices

    Directory of Open Access Journals (Sweden)

    Jae Dong Lee

    2014-01-01

    Full Text Available As intelligent ubiquitous devices become more popular, security threats targeting them are increasing; security is seen as one of the major challenges of the ubiquitous computing. Now a days, applying ubiquitous computing in number of fields for human safety and convenience was immensely increased in recent years. The popularity of the technology is rising day by day, and hence the security is becoming the main focused point with the advent and rising popularity of the applications. In particular, the number of wireless networks based on ubiquitous devices has increased rapidly; these devices support transmission for many types of data traffic. The convenient portability of ubiquitous devices makes them vulnerable to security threats, such as loss, theft, data modification, and wiretapping. Developers and users should seriously consider employing data encryption to protect data from such vulnerabilities. In this paper, we propose a Rhythm Key based Encryption scheme for ubiquitous devices (Ubi-RKE. The concept of Rhythm Key based Encryption has been applied to numerous real world applications in different domains. It provides key memorability and secure encryption through user touching rhythm on ubiquitous devices. Our proposed scheme is more efficient for users than existing schemes, by providing a strong cipher.

  20. Efficient light emitting devices based on phosphorescent partially doped emissive layers

    KAUST Repository

    Yang, Xiaohui

    2013-05-29

    We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices with the emissive layer consisting of multiple platinum-complex/spacer layer cells show a peak external quantum efficiency of 18.1%, which is among the best EQE values for platinum-complex based light emitting devices. Devices with an ultrathin phosphor emissive layer show stronger luminance decay with the operating time compared to the counterpart devices having a host-guest emissive layer.

  1. Evaluation of polymer based third order nonlinear integrated optics devices

    NARCIS (Netherlands)

    Driessen, A.; Hoekstra, Hugo; Blom, F.C.; Horst, F.; Horst, F.; Krijnen, Gijsbertus J.M.; van Schoot, J.B.P.; van Schoot, J.B.P.; Lambeck, Paul; Popma, T.J.A.; Diemeer, Mart

    Nonlinear polymers are promising materials for high speed active integrated optics devices. In this paper we evaluate the perspectives polymer based nonlinear optical devices can offer. Special attention is directed to the materials aspects. In our experimental work we applied mainly Akzo Nobel DANS

  2. High-performance spinning device for DVD-based micromechanical signal transduction

    DEFF Research Database (Denmark)

    Hwu, En-Te; Chen, Ching-Hsiu; Bosco, Filippo

    2013-01-01

    Here we report a high-throughput spinning device for nanometric scale measurements of microstructures with instrumentation details and experimental results. The readout technology implemented in the designed disc-like device is based on a DVD data storage optical pick-up unit (OPU). With a spinning...

  3. Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

    KAUST Repository

    Wang, Hong

    2015-05-01

    The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials. Resistive switching (RS) devices with configurable functionality based on protein are successfully achieved. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Illusion thermal device based on material with constant anisotropic thermal conductivity for location camouflage

    Science.gov (United States)

    Hou, Quanwen; Zhao, Xiaopeng; Meng, Tong; Liu, Cunliang

    2016-09-01

    Thermal metamaterials and devices based on transformation thermodynamics often require materials with anisotropic and inhomogeneous thermal conductivities. In this study, still based on the concept of transformation thermodynamics, we designed a planar illusion thermal device, which can delocalize a heat source in the device such that the temperature profile outside the device appears to be produced by a virtual source at another position. This device can be constructed by only one kind of material with constant anisotropic thermal conductivity. The condition which should be satisfied by the device is provided, and the required anisotropic thermal conductivity is then deduced theoretically. This study may be useful for the designs of metamaterials or devices since materials with constant anisotropic parameters have great facility in fabrication. A prototype device has been fabricated based on a composite composed by two naturally occurring materials. The experimental results validate the effectiveness of the device.

  5. Development of induction current acquisition device based on ARM

    Science.gov (United States)

    Ji, Yanju; Liu, Xiyang; Huang, Wanyu; Yao, Jiang; Yuan, Guiyang; Hui, Luan; Guan, Shanshan

    2018-03-01

    We design an induction current acquisition device based on ARM in order to realize high resolution and high sampling rate of acquisition for the induction current in wire-loop. Considering its characteristics of fast attenuation and small signal amplitude, we use the method of multi-path fusion for noise suppression. In the paper, the design is carried out from three aspects of analog circuit and device selection, independent power supply structure and the electromagnetic interference suppression of high frequency. DMA and ping-pong buffer, as a new data transmission technology, solves real time storage problem of massive data. The performance parameters of ARM acquisition device are tested. The comparison test of ARM acquisition device and cRIO acquisition device is performed at different time constants. The results show that it has 120dB dynamic range, 47kHz bandwidth, 96kHz sampling rate, 5μV the smallest resolution, and its average error value is not more than 4%, which proves the high accuracy and stability of the device.

  6. A Peltier-based freeze-thaw device for meteorite disaggregation

    Science.gov (United States)

    Ogliore, R. C.

    2018-02-01

    A Peltier-based freeze-thaw device for the disaggregation of meteorite or other rock samples is described. Meteorite samples are kept in six water-filled cavities inside a thin-walled Al block. This block is held between two Peltier coolers that are automatically cycled between cooling and warming. One cycle takes approximately 20 min. The device can run unattended for months, allowing for ˜10 000 freeze-thaw cycles that will disaggregate meteorites even with relatively low porosity. This device was used to disaggregate ordinary and carbonaceous chondrite regoltih breccia meteorites to search for micrometeoroid impact craters.

  7. Multi-Device to Multi-Device (MD2MD Content-Centric Networking Based on Multi-RAT Device

    Directory of Open Access Journals (Sweden)

    Cheolhoon Kim

    2017-11-01

    Full Text Available This paper proposes a method whereby a device can transmit and receive information using a beacon, and also describes application scenarios for the proposed method. In a multi-device to multi-device (MD2MD content-centric networking (CCN environment, the main issue involves searching for and connecting to nearby devices. However, if a device can’t find another device that satisfies its requirements, the connection is delayed due to the repetition of processes. It is possible to rapidly connect to a device without repetition through the selection of the optimal device using the proposed method. Consequently, the proposed method and scenarios are advantageous in that they enable efficient content identification and delivery in a content-centric Internet of Things (IoT environment, in which multiple mobile devices coexist.

  8. Novel Opportunistic Network Routing Based on Social Rank for Device-to-Device Communication

    Directory of Open Access Journals (Sweden)

    Tong Wang

    2017-01-01

    Full Text Available In recent years, there has been dramatic proliferation of research concerned with fifth-generation (5G mobile communication networks, among which device-to-device (D2D communication is one of the key technologies. Due to the intermittent connection of nodes, the D2D network topology may be disconnected frequently, which will lead to failure in transmission of large data files. In opportunistic networks, in case of encountering nodes which never meet before a flood message blindly to cause tremendous network overhead, a novel opportunistic network routing protocol based on social rank and intermeeting time (SRIT is proposed in this paper. An improved utility approach applied in utility replication based on encounter durations and intermeeting time is put forward to enhance the routing efficiency. Meanwhile, in order to select better candidate nodes in the network, a social graph among people is established when they socially relate to each other in social rank replication. The results under the scenario show an advantage of the proposed opportunistic network routing based on social rank and intermeeting time (SRIT over the compared algorithms in terms of delivery ratio, average delivery latency, and overhead ratio.

  9. Negative luminescence and devices based on this phenomenon

    International Nuclear Information System (INIS)

    Ivanov-Omskii, V. I.; Matveev, B. A.

    2007-01-01

    Recent publications concerned with infrared emitters whose electrical modulation results in absorption of radiation detected as negative luminescence are reviewed. The main properties of the devices based on this phenomenon are analyzed

  10. Negative luminescence and devices based on this phenomenon

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov-Omskii, V I; Matveev, B. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)], E-mail: bmat@iropt3.ioffe.rssi.ru

    2007-03-15

    Recent publications concerned with infrared emitters whose electrical modulation results in absorption of radiation detected as negative luminescence are reviewed. The main properties of the devices based on this phenomenon are analyzed.

  11. High spin-polarization in ultrathin Co2MnSi/CoPd multilayers

    Science.gov (United States)

    Galanakis, I.

    2015-03-01

    Half-metallic Co2MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co2MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co2MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices.

  12. Noise and its reduction in graphene based nanopore devices

    International Nuclear Information System (INIS)

    Kumar, Ashvani; Park, Kyeong-Beom; Kim, Hyun-Mi; Kim, Ki-Bum

    2013-01-01

    Ionic current fluctuations in graphene nanopore devices are a ubiquitous phenomenon and are responsible for degraded spatial and temporal resolution. Here, we descriptively investigate the impact of different substrate materials (Si and quartz) and membrane thicknesses on noise characteristics of graphene nanopore devices. To mitigate the membrane fluctuations and pin-hole defects, a SiN x membrane is transferred onto the substrate and a pore of approximately 70 nm in diameter is perforated prior to the graphene transfer. Comprehensive noise study reveals that the few layer graphene transferred onto the quartz substrate possesses low noise level and higher signal to noise ratio as compared to single layer graphene, without deteriorating the spatial resolution. The findings here point to improvement of graphene based nanopore devices for exciting opportunities in future single-molecule genomic screening devices. (paper)

  13. A new JPEG-based steganographic algorithm for mobile devices

    Science.gov (United States)

    Agaian, Sos S.; Cherukuri, Ravindranath C.; Schneider, Erik C.; White, Gregory B.

    2006-05-01

    Currently, cellular phones constitute a significant portion of the global telecommunications market. Modern cellular phones offer sophisticated features such as Internet access, on-board cameras, and expandable memory which provide these devices with excellent multimedia capabilities. Because of the high volume of cellular traffic, as well as the ability of these devices to transmit nearly all forms of data. The need for an increased level of security in wireless communications is becoming a growing concern. Steganography could provide a solution to this important problem. In this article, we present a new algorithm for JPEG-compressed images which is applicable to mobile platforms. This algorithm embeds sensitive information into quantized discrete cosine transform coefficients obtained from the cover JPEG. These coefficients are rearranged based on certain statistical properties and the inherent processing and memory constraints of mobile devices. Based on the energy variation and block characteristics of the cover image, the sensitive data is hidden by using a switching embedding technique proposed in this article. The proposed system offers high capacity while simultaneously withstanding visual and statistical attacks. Based on simulation results, the proposed method demonstrates an improved retention of first-order statistics when compared to existing JPEG-based steganographic algorithms, while maintaining a capacity which is comparable to F5 for certain cover images.

  14. Method of controlling illumination device based on current-voltage model

    DEFF Research Database (Denmark)

    2013-01-01

    The present invention relates to an illumination device comprising a number of LEDs, means for receiving an input signal, means for generating an activation signal for at least one of the LEDs based on the input signal. The illumination device comprises further means for obtaining the voltage...... and the colorimetric properties of said light emitted by LED. The present invention relates also to a method of controlling and a meted of calibrating such illumination device....... across and current through the LED and the means for generating the activation signal is adapted to generate the activating signal based on the voltage, the current and a current- voltage model related to LED. The current-voltage model defines a relationship between the current, the voltage...

  15. A rhythm-based authentication scheme for smart media devices.

    Science.gov (United States)

    Lee, Jae Dong; Jeong, Young-Sik; Park, Jong Hyuk

    2014-01-01

    In recent years, ubiquitous computing has been rapidly emerged in our lives and extensive studies have been conducted in a variety of areas related to smart devices, such as tablets, smartphones, smart TVs, smart refrigerators, and smart media devices, as a measure for realizing the ubiquitous computing. In particular, smartphones have significantly evolved from the traditional feature phones. Increasingly higher-end smartphone models that can perform a range of functions are now available. Smart devices have become widely popular since they provide high efficiency and great convenience for not only private daily activities but also business endeavors. Rapid advancements have been achieved in smart device technologies to improve the end users' convenience. Consequently, many people increasingly rely on smart devices to store their valuable and important data. With this increasing dependence, an important aspect that must be addressed is security issues. Leaking of private information or sensitive business data due to loss or theft of smart devices could result in exorbitant damage. To mitigate these security threats, basic embedded locking features are provided in smart devices. However, these locking features are vulnerable. In this paper, an original security-locking scheme using a rhythm-based locking system (RLS) is proposed to overcome the existing security problems of smart devices. RLS is a user-authenticated system that addresses vulnerability issues in the existing locking features and provides secure confidentiality in addition to convenience.

  16. P-type zinc oxide spinels: application to transparent conductors and spintronics

    International Nuclear Information System (INIS)

    Stoica, Maria; S Lo, Cynthia

    2014-01-01

    We report on the electronic and optical properties of two theoretically predicted stable spinel compounds of the form ZnB 2 O 4 , where B = Ni or Cu; neither compound has been previously synthesized, so we compare them to the previously studied p-type ZnCo 2 O 4 spinel. These new materials exhibit spin polarization, which is useful for spintronics applications, and broad conductivity maxima near the valence band edge that indicate good p-type dopability. We show that 3d electrons on the octahedrally coordinated Zn atom fall deep within the valence band and do not contribute significantly to the electronic structure near the band edge of the material, while the O 2p and tetrahedrally coordinated B 3d electrons hybridize broadly in the shallow valence states, resulting in increasing curvature (i.e., decreased electron effective mass) of valence bands near the band edge. In particular, ZnCu 2 O 4 exhibits high electrical conductivities in the p-doping region near the valence band edge that, at σ=2×10 4  S cm −1 , are twice the maximum found for ZnCo 2 O 4 , a previously synthesized compound in this class of materials. This material also exhibits ferromagnetism in all of its most stable structures, which makes it a good candidate for further study as a dilute magnetic semiconductor. (paper)

  17. Physically-based modelling of polycrystalline semiconductor devices

    International Nuclear Information System (INIS)

    Lee, S.

    2000-01-01

    Thin-film technology using polycrystalline semiconductors has been widely applied to active-matrix-addressed liquid crystal displays (AMLCDs) where thin-film transistors act as digital pixel switches. Research and development is in progress to integrate the driver circuits around the peripheral of the display, resulting in significant cost reduction of connections between rows and columns and the peripheral circuitry. For this latter application, where for instance it is important to control the greyscale voltage level delivered to the pixel, an understanding of device behaviour is required so that models can be developed for analogue circuit simulation. For this purpose, various analytical models have been developed based on that of Seto who considered the effect of monoenergetic trap states and grain boundaries in polycrystalline materials but not the contribution of the grains to the electrical properties. The principal aim of this thesis is to describe the use of a numerical device simulator (ATLAS) as a tool to investigate the physics of the trapping process involved in the device operation, which additionally takes into account the effect of multienergetic trapping levels and the contribution of the grain into the modelling. A study of the conventional analytical models is presented, and an alternative approach is introduced which takes into account the grain regions to enhance the accuracy of the analytical modelling. A physically-based discrete-grain-boundary model and characterisation method are introduced to study the effects of the multienergetic trap states on the electrical characteristics of poly-TFTs using CdSe devices as the experimental example, and the electrical parameters such as the density distribution of the trapping states are extracted. The results show excellent agreement between the simulation and experimental data. The limitations of this proposed physical model are also studied and discussed. (author)

  18. An electromagnetic inerter-based vibration suppression device

    International Nuclear Information System (INIS)

    Gonzalez-Buelga, A; Clare, L R; Neild, S A; Jiang, J Z; Inman, D J

    2015-01-01

    This paper describes how an inerter-based device for structural vibration suppression can be realized using an electromagnetic transducer such as a linear motor. When the motor shaft moves, a difference of voltage is generated across the transducer coil. The voltage difference is proportional to the relative velocity between its two terminals. The electromagnetic transducer will exert a force proportional to current following the Lorentz principle if the circuit is closed around the transducer coil. If an electronic circuit consisting of a capacitor, an inductance and a resistance with the appropriate configuration is connected, the resulting force reflected back into the mechanical domain is equivalent to that achieved by a mechanical inerter-based device. The proposed configuration is easy to implement and very versatile, provided a high quality conversion system with negligible losses. With the use of electromagnetic devices, a new generation of vibration absorbers can be realized, for example in the electrical domain it would be relatively uncomplicated to synthesize multi-frequency or real time tunable vibration absorbers by adding electrical components in parallel. In addition by using resistance emulators in the electrical circuits, part of the absorbed vibration energy can be converted into usable power. Here an electromagnetic tuned inerter damper (E-TID) is tested experimentally using real time dynamic substructuring. A voltage compensation unit was developed in order to compensate for coil losses. This voltage compensation unit requires power, which is acquired through harvesting from the vibration energy using a resistance emulator. A power balance analysis was developed in order to ensure the device can be self sufficient. Promising experimental results, using this approach, have been obtained and are presented in this paper. The ultimate goal of this research is the development of autonomous electromagnetic vibration absorbers, able to harvest energy

  19. Optical sensor array platform based on polymer electronic devices

    Science.gov (United States)

    Koetse, Marc M.; Rensing, Peter A.; Sharpe, Ruben B. A.; van Heck, Gert T.; Allard, Bart A. M.; Meulendijks, Nicole N. M. M.; Kruijt, Peter G. M.; Tijdink, Marcel W. W. J.; De Zwart, René M.; Houben, René J.; Enting, Erik; van Veen, Sjaak J. J. F.; Schoo, Herman F. M.

    2007-10-01

    Monitoring of personal wellbeing and optimizing human performance are areas where sensors have only begun to be used. One of the reasons for this is the specific demands that these application areas put on the underlying technology and system properties. In many cases these sensors will be integrated in clothing, be worn on the skin, or may even be placed inside the body. This implies that flexibility and wearability of the systems is essential for their success. Devices based on polymer semiconductors allow for these demands since they can be fabricated with thin film technology. The use of thin film device technology allows for the fabrication of very thin sensors (e.g. integrated in food product packaging), flexible or bendable sensors in wearables, large area/distributed sensors, and intrinsically low-cost applications in disposable products. With thin film device technology a high level of integration can be achieved with parts that analyze signals, process and store data, and interact over a network. Integration of all these functions will inherently lead to better cost/performance ratios, especially if printing and other standard polymer technology such as high precision moulding is applied for the fabrication. In this paper we present an optical transmission sensor array based on polymer semiconductor devices made by thin film technology. The organic devices, light emitting diodes, photodiodes and selective medium chip, are integrated with classic electronic components. Together they form a versatile sensor platform that allows for the quantitative measurement of 100 channels and communicates wireless with a computer. The emphasis is given to the sensor principle, the design, fabrication technology and integration of the thin film devices.

  20. Electrochromic Devices Based on Porous Tungsten Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Y. Djaoued

    2012-01-01

    Full Text Available Recent developments in the synthesis of transition metal oxides in the form of porous thin films have opened up opportunities in the construction of electrochromic devices with enhanced properties. In this paper, synthesis, characterization and electrochromic applications of porous WO3 thin films with different nanocrystalline phases, such as hexagonal, monoclinic, and orthorhombic, are presented. Asymmetric electrochromic devices have been constructed based on these porous WO3 thin films. XRD measurements of the intercalation/deintercalation of Li+ into/from the WO3 layer of the device as a function of applied coloration/bleaching voltages show systematic changes in the lattice parameters associated with structural phase transitions in LixWO3. Micro-Raman studies show systematic crystalline phase changes in the spectra of WO3 layers during Li+ ion intercalation and deintercalation, which agree with the XRD data. These devices exhibit interesting optical modulation (up to ~70% due to intercalation/deintercalation of Li ions into/from the WO3 layer of the devices as a function of applied coloration/bleaching voltages. The obtained optical modulation of the electrochromic devices indicates that, they are suitable for applications in electrochromic smart windows.

  1. Validating the Accuracy of Reaction Time Assessment on Computer-Based Tablet Devices.

    Science.gov (United States)

    Schatz, Philip; Ybarra, Vincent; Leitner, Donald

    2015-08-01

    Computer-based assessment has evolved to tablet-based devices. Despite the availability of tablets and "apps," there is limited research validating their use. We documented timing delays between stimulus presentation and (simulated) touch response on iOS devices (3rd- and 4th-generation Apple iPads) and Android devices (Kindle Fire, Google Nexus, Samsung Galaxy) at response intervals of 100, 250, 500, and 1,000 milliseconds (ms). Results showed significantly greater timing error on Google Nexus and Samsung tablets (81-97 ms), than Kindle Fire and Apple iPads (27-33 ms). Within Apple devices, iOS 7 obtained significantly lower timing error than iOS 6. Simple reaction time (RT) trials (250 ms) on tablet devices represent 12% to 40% error (30-100 ms), depending on the device, which decreases considerably for choice RT trials (3-5% error at 1,000 ms). Results raise implications for using the same device for serial clinical assessment of RT using tablets, as well as the need for calibration of software and hardware. © The Author(s) 2015.

  2. New spintronic superlattices composed of half-metallic compounds with zinc-blende structure

    International Nuclear Information System (INIS)

    Fong, C Y; Qian, M C

    2004-01-01

    The successful growth of zinc-blende half-metallic compounds, namely CrAs and CrSb, in thin film forms offers a new direction to search for novel spintronic materials. By using a well documented first-principles algorithm, the VASP code, we predict the electronic and magnetic properties of superlattices made of these exciting half-metallic materials. Not only are the superlattices constructed with two of the half-metallic compounds (CrAs/MnAs) but also they are modelled to combine with both a III-V (GaAs-MnAs/CrAs/GaAs) and a IV-IV (MnC/SiC) semiconductor. We investigate variable thicknesses for the combinations. For every case, we find the equilibrium lattice constant as well as the lattice constant at which the superlattice exhibits the half-metallic properties. For CrAs/MnAs, the half-metallic properties are presented and the magnetic moments are shown to be the sum of the moments for MnAs and CrAs. The half-metallic properties of GaAs-MnAs/CrAs/GaAs are found to be crucially dependent on the completion of the d-p hybridization. The magnetic properties of MnC/SiC are discussed with respect to the properties of MnC

  3. Detection of nucleic acids by graphene-based devices: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Hua [School of Physics and Electronics, Central South University, Changsha 410083 (China); School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China); Xu, Hui, E-mail: xuhui@csu.edu.cn, E-mail: ouyangfp06@tsinghua.org.cn; Ni, Xiang; Lin Peng, Sheng; Liu, Qi; Ping OuYang, Fang, E-mail: xuhui@csu.edu.cn, E-mail: ouyangfp06@tsinghua.org.cn [School of Physics and Electronics, Central South University, Changsha 410083 (China)

    2014-04-07

    Based on first-principles quantum transport calculations, we design a graphene-based biosensor device, which is composed of graphene nanoribbons electrodes and a biomolecule. It is found that when different nucleobases or poly nucleobase chains are located in the nanogap, the device presents completely different transport properties, showing different current informations. And the change of currents from 2 to 5 orders of magnitude for four different nucleobases suggests a great ability of discrimination by utilizing such a device. The physical mechanism of this phenomenon originates from their different chemical composition and structure. Moreover, we also explore the coupling effect of several neighboring bases and the size effect of the nanogap on transport properties. Our results show the possibility of rapid sequencing DNA by measuring such a transverse-current of the device, and provide a new idea for sequencing DNA.

  4. 3D Printed Photoresponsive Devices Based on Shape Memory Composites.

    Science.gov (United States)

    Yang, Hui; Leow, Wan Ru; Wang, Ting; Wang, Juan; Yu, Jiancan; He, Ke; Qi, Dianpeng; Wan, Changjin; Chen, Xiaodong

    2017-09-01

    Compared with traditional stimuli-responsive devices with simple planar or tubular geometries, 3D printed stimuli-responsive devices not only intimately meet the requirement of complicated shapes at macrolevel but also satisfy various conformation changes triggered by external stimuli at the microscopic scale. However, their development is limited by the lack of 3D printing functional materials. This paper demonstrates the 3D printing of photoresponsive shape memory devices through combining fused deposition modeling printing technology and photoresponsive shape memory composites based on shape memory polymers and carbon black with high photothermal conversion efficiency. External illumination triggers the shape recovery of 3D printed devices from the temporary shape to the original shape. The effect of materials thickness and light density on the shape memory behavior of 3D printed devices is quantified and calculated. Remarkably, sunlight also triggers the shape memory behavior of these 3D printed devices. This facile printing strategy would provide tremendous opportunities for the design and fabrication of biomimetic smart devices and soft robotics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. A Rhythm-Based Authentication Scheme for Smart Media Devices

    Directory of Open Access Journals (Sweden)

    Jae Dong Lee

    2014-01-01

    Full Text Available In recent years, ubiquitous computing has been rapidly emerged in our lives and extensive studies have been conducted in a variety of areas related to smart devices, such as tablets, smartphones, smart TVs, smart refrigerators, and smart media devices, as a measure for realizing the ubiquitous computing. In particular, smartphones have significantly evolved from the traditional feature phones. Increasingly higher-end smartphone models that can perform a range of functions are now available. Smart devices have become widely popular since they provide high efficiency and great convenience for not only private daily activities but also business endeavors. Rapid advancements have been achieved in smart device technologies to improve the end users’ convenience. Consequently, many people increasingly rely on smart devices to store their valuable and important data. With this increasing dependence, an important aspect that must be addressed is security issues. Leaking of private information or sensitive business data due to loss or theft of smart devices could result in exorbitant damage. To mitigate these security threats, basic embedded locking features are provided in smart devices. However, these locking features are vulnerable. In this paper, an original security-locking scheme using a rhythm-based locking system (RLS is proposed to overcome the existing security problems of smart devices. RLS is a user-authenticated system that addresses vulnerability issues in the existing locking features and provides secure confidentiality in addition to convenience.

  6. Supramolecular Luminescence from Oligofluorenol-Based Supramolecular Polymer Semiconductors

    Directory of Open Access Journals (Sweden)

    Guang-Wei Zhang

    2013-11-01

    Full Text Available Supramolecular luminescence stems from non-covalent exciton behaviors of active π-segments in supramolecular entities or aggregates via intermolecular forces. Herein, a π-conjugated oligofluorenol, containing self-complementary double hydrogen bonds, was synthesized using Suzuki coupling as a supramolecular semiconductor. Terfluorenol-based random supramolecular polymers were confirmed via concentration-dependent nuclear magnetic resonance (NMR and dynamic light scattering (DLS. The photoluminescent spectra of the TFOH-1 solution exhibit a green emission band (g-band at approximately ~520 nm with reversible features, as confirmed through titration experiments. Supramolecular luminescence of TFOH-1 thin films serves as robust evidence for the aggregates of g-band. Our results suggest that the presence of polyfluorene ketone defects is a sufficient condition, rather than a sufficient-necessary condition for the g-band. Supramolecular electroluminescence will push organic devices into the fields of supramolecular optoelectronics, spintronics, and mechatronics.

  7. Bioinspired Graphene-Based Nanocomposites and Their Application in Flexible Energy Devices.

    Science.gov (United States)

    Wan, Sijie; Peng, Jingsong; Jiang, Lei; Cheng, Qunfeng

    2016-09-01

    Graphene is the strongest and stiffest material ever identified and the best electrical conductor known to date, making it an ideal candidate for constructing nanocomposites used in flexible energy devices. However, it remains a great challenge to assemble graphene nanosheets into macro-sized high-performance nanocomposites in practical applications of flexible energy devices using traditional approaches. Nacre, the gold standard for biomimicry, provides an excellent example and guideline for assembling two-dimensional nanosheets into high-performance nanocomposites. This review summarizes recent research on the bioinspired graphene-based nanocomposites (BGBNs), and discusses different bioinspired assembly strategies for constructing integrated high-strength and -toughness graphene-based nanocomposites through various synergistic effects. Fundamental properties of graphene-based nanocomposites, such as strength, toughness, and electrical conductivities, are highlighted. Applications of the BGBNs in flexible energy devices, as well as potential challenges, are addressed. Inspired from the past work done by the community a roadmap for the future of the BGBNs in flexible energy device applications is depicted. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Electric-field-controlled interface dipole modulation for Si-based memory devices.

    Science.gov (United States)

    Miyata, Noriyuki

    2018-05-31

    Various nonvolatile memory devices have been investigated to replace Si-based flash memories or emulate synaptic plasticity for next-generation neuromorphic computing. A crucial criterion to achieve low-cost high-density memory chips is material compatibility with conventional Si technologies. In this paper, we propose and demonstrate a new memory concept, interface dipole modulation (IDM) memory. IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO 2 /Si MOS capacitor where the interface monolayer (ML) TiO 2 functions as a dipole modulator. However, this configuration is unsuitable for Si-FET-based devices due to its large interface state density (D it ). Consequently, we propose, a multi-stacked amorphous HfO 2 /1-ML TiO 2 /SiO 2 IDM structure to realize a low D it and a wide memory window. Herein we describe the quasi-static and pulse response characteristics of multi-stacked IDM MOS capacitors and demonstrate flash-type and analog memory operations of an IDM FET device.

  9. Spin tunneling and manipulation in nanostructures.

    Science.gov (United States)

    Sherman, E Ya; Ban, Yue; Gulyaev, L V; Khomitsky, D V

    2012-09-01

    The results for joint effects of tunneling and spin-orbit coupling on spin dynamics in nanostructures are presented for systems with discrete and continuous spectra. We demonstrate that tunneling plays the crucial role in the spin dynamics and the abilities of spin manipulation by external electric field. This result can be important for design of nanostructures-based spintronics devices.

  10. A cloud-based multimodality case file for mobile devices.

    Science.gov (United States)

    Balkman, Jason D; Loehfelm, Thomas W

    2014-01-01

    Recent improvements in Web and mobile technology, along with the widespread use of handheld devices in radiology education, provide unique opportunities for creating scalable, universally accessible, portable image-rich radiology case files. A cloud database and a Web-based application for radiologic images were developed to create a mobile case file with reasonable usability, download performance, and image quality for teaching purposes. A total of 75 radiology cases related to breast, thoracic, gastrointestinal, musculoskeletal, and neuroimaging subspecialties were included in the database. Breast imaging cases are the focus of this article, as they best demonstrate handheld display capabilities across a wide variety of modalities. This case subset also illustrates methods for adapting radiologic content to cloud platforms and mobile devices. Readers will gain practical knowledge about storage and retrieval of cloud-based imaging data, an awareness of techniques used to adapt scrollable and high-resolution imaging content for the Web, and an appreciation for optimizing images for handheld devices. The evaluation of this software demonstrates the feasibility of adapting images from most imaging modalities to mobile devices, even in cases of full-field digital mammograms, where high resolution is required to represent subtle pathologic features. The cloud platform allows cases to be added and modified in real time by using only a standard Web browser with no application-specific software. Challenges remain in developing efficient ways to generate, modify, and upload radiologic and supplementary teaching content to this cloud-based platform. Online supplemental material is available for this article. ©RSNA, 2014.

  11. Evolution of topological skyrmions across the spin reorientation transition in Pt/Co/Ta multilayers

    Science.gov (United States)

    He, Min; Li, Gang; Zhu, Zhaozhao; Zhang, Ying; Peng, Licong; Li, Rui; Li, Jianqi; Wei, Hongxiang; Zhao, Tongyun; Zhang, X.-G.; Wang, Shouguo; Lin, Shi-Zeng; Gu, Lin; Yu, Guoqiang; Cai, J. W.; Shen, Bao-gen

    2018-05-01

    Magnetic skyrmions in multilayers are particularly appealing as next generation memory devices due to their topological compact size, the robustness against external perturbations, the capability of electrical driving and detection, and the compatibility with the existing spintronic technologies. To date, Néel-type skyrmions at room temperature (RT) have been studied mostly in multilayers with easy-axis magnetic anisotropy. Here, we systematically broadened the evolution of magnetic skyrmions with sub-50-nm size in a series of Pt/Co/Ta multilayers where the magnetic anisotropy is tuned continuously from easy axis to easy plane by increasing the ferromagnetic Co layer thickness. The existence of nontrivial skyrmions is identified via the combination of in situ Lorentz transmission electron microscopy (L-TEM) and Hall transport measurements. A high density of magnetic skyrmions over a wide temperature range is observed in the multilayers with easy-plane anisotropy, which will stimulate further exploration for new materials and accelerate the development of skyrmion-based spintronic devices.

  12. Semiconductor device-based sensors for gas, chemical, and biomedical applications

    CERN Document Server

    Ren, Fan

    2011-01-01

    Sales of U.S. chemical sensors represent the largest segment of the multi-billion-dollar global sensor market, which includes instruments for chemical detection in gases and liquids, biosensors, and medical sensors. Although silicon-based devices have dominated the field, they are limited by their general inability to operate in harsh environments faced with factors such as high temperature and pressure. Exploring how and why these instruments have become a major player, Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications presents the latest research, including or

  13. Rapid development of paper-based fluidic diagnostic devices

    CSIR Research Space (South Africa)

    Smith, S

    2014-11-01

    Full Text Available We present a method for rapid and low-cost development of microfluidic diagnostic devices using paper-based techniques. Specifically, the implementation of fluidic flow paths and electronics on paper are demonstrated, with the goal of producing...

  14. Proton irradiation of liquid crystal based adaptive optical devices

    International Nuclear Information System (INIS)

    Buis, E.J.; Berkhout, G.C.G.; Love, G.D.; Kirby, A.K.; Taylor, J.M.; Hannemann, S.; Collon, M.J.

    2012-01-01

    To assess its radiation hardness, a liquid crystal based adaptive optical element has been irradiated using a 60 MeV proton beam. The device with the functionality of an optical beam steerer was characterised before, during and after the irradiation. A systematic set of measurements on the transmission and beam deflection angles was carried out. The measurements showed that the transmission decreased only marginally and that its optical performance degraded only after a very high proton fluence (10 10 p/cm 2 ). The device showed complete annealing in the functionality as a beam steerer, which leads to the conclusion that the liquid crystal technology for optical devices is not vulnerable to proton irradiation as expected in space.

  15. Proton irradiation of liquid crystal based adaptive optical devices

    Energy Technology Data Exchange (ETDEWEB)

    Buis, E.J., E-mail: ernst-jan.buis@tno.nl [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Berkhout, G.C.G. [cosine Science and Computing BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands); Huygens Laboratory, Leiden University, P.O. Box 9504, 2300 RA Leiden (Netherlands); Love, G.D.; Kirby, A.K.; Taylor, J.M. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Hannemann, S.; Collon, M.J. [cosine Research BV, Niels Bohrweg 11, 2333 CA Leiden (Netherlands)

    2012-01-01

    To assess its radiation hardness, a liquid crystal based adaptive optical element has been irradiated using a 60 MeV proton beam. The device with the functionality of an optical beam steerer was characterised before, during and after the irradiation. A systematic set of measurements on the transmission and beam deflection angles was carried out. The measurements showed that the transmission decreased only marginally and that its optical performance degraded only after a very high proton fluence (10{sup 10}p/cm{sup 2}). The device showed complete annealing in the functionality as a beam steerer, which leads to the conclusion that the liquid crystal technology for optical devices is not vulnerable to proton irradiation as expected in space.

  16. Surface wave photonic device based on porous silicon multilayers

    International Nuclear Information System (INIS)

    Guillermain, E.; Lysenko, V.; Benyattou, T.

    2006-01-01

    Porous silicon is widely studied in the field of photonics due to its interesting optical properties. In this work, we present theoretical and first experimental studies of a new kind of porous silicon photonic device based on optical surface wave. A theoretical analysis of the device is presented using plane-wave approximation. The porous silicon multilayered structures are realized using electrochemical etching of p + -type silicon. Morphological and optical characterizations of the realized structures are reported

  17. The PMIPv6-Based Group Binding Update for IoT Devices

    Directory of Open Access Journals (Sweden)

    Jianfeng Guan

    2016-01-01

    Full Text Available Internet of Things (IoT has been booming with rapid increase of the various wearable devices, vehicle embedded devices, and so on, and providing the effective mobility management for these IoT devices becomes a challenge due to the different application scenarios as well as the limited energy and bandwidth. Recently, lots of researchers have focused on this topic and proposed several solutions based on the combination of IoT features and traditional mobility management protocols, in which most of these schemes take the IoT devices as mobile networks and adopt the NEtwork MObility (NEMO and its variants to provide the mobility support. However, these solutions are in face of the heavy signaling cost problem. Since IoT devices are generally combined to realize the complex functions, these devices may have similar movement behaviors. Clearly analyzing these characters and using them in the mobility management will reduce the signaling cost and improve the scalability. Motivated by this, we propose a PMIPv6-based group binding update method. In particular, we describe its group creation procedure, analyze its impact on the mobility management, and derive its reduction ratio in terms of signaling cost. The final results show that the introduction of group binding update can remarkably reduce the signaling cost.

  18. Fabrication of paper-based analytical devices optimized by central composite design.

    Science.gov (United States)

    Hamedpour, Vahid; Leardi, Riccardo; Suzuki, Koji; Citterio, Daniel

    2018-04-30

    In this work, an application of a design of experiments approach for the optimization of an isoniazid assay on a single-area inkjet-printed paper-based analytical device (PAD) is described. For this purpose, a central composite design was used for evaluation of the effect of device geometry and amount of assay reagents on the efficiency of the proposed device. The factors of interest were printed length, width, and sampling volume as factors related to device geometry, and amounts of the assay reagents polyvinyl alcohol (PVA), NH4OH, and AgNO3. Deposition of the assay reagents was performed by a thermal inkjet printer. The colorimetric assay mechanism of this device is based on the chemical interaction of isoniazid, ammonium hydroxide, and PVA with silver ions to induce the formation of yellow silver nanoparticles (AgNPs). The in situ-formed AgNPs can be easily detected by the naked eye or with a simple flat-bed scanner. Under optimal conditions, the calibration curve was linear in the isoniazid concentration range 0.03-10 mmol L-1 with a relative standard deviation of 3.4% (n = 5 for determination of 1.0 mmol L-1). Finally, the application of the proposed device for isoniazid determination in pharmaceutical preparations produced satisfactory results.

  19. Physical Modeling of the Polyfrequency Filter-Compensating Device Based on the Capacitor-Coil

    Science.gov (United States)

    Butyrin, P. A.; Gusev, G. G.; Mikheev, D. V.; Shakirzianov, F. N.

    2017-12-01

    The paper presents the results of physical modeling and experimental study of the frequency characteristics of the polyfrequency filter-compensating device (PFCD) based on a capacitor-coil. The amplitude- frequency and phase-frequency characteristics of the physical PFCD model were constructed and its equivalent parameters were identified. The feasibility of a PFCD in the form of a single technical device with high technical and economic characteristics was experimentally proven. In the paper, recommendations for practical applications of the capacitor-coil-based PFCD are made and the advantages of the device over known standard passive filter-compensating devices are evaluated.

  20. Rapid Prototyping of a Smart Device-based Wireless Reflectance Photoplethysmograph

    Science.gov (United States)

    Ghamari, M.; Aguilar, C.; Soltanpur, C.; Nazeran, H.

    2017-01-01

    This paper presents the design, fabrication, and testing of a wireless heart rate (HR) monitoring device based on photoplethysmography (PPG) and smart devices. PPG sensors use infrared (IR) light to obtain vital information to assess cardiac health and other physiologic conditions. The PPG data that are transferred to a computer undergo further processing to derive the Heart Rate Variability (HRV) signal, which is analyzed to generate quantitative markers of the Autonomic Nervous System (ANS). The HRV signal has numerous monitoring and diagnostic applications. To this end, wireless connectivity plays an important role in such biomedical instruments. The photoplethysmograph consists of an optical sensor to detect the changes in the light intensity reflected from the illuminated tissue, a signal conditioning unit to prepare the reflected light for further signal conditioning through amplification and filtering, a low-power microcontroller to control and digitize the analog PPG signal, and a Bluetooth module to transmit the digital data to a Bluetooth-based smart device such as a tablet. An Android app is then used to enable the smart device to acquire and digitally display the received analog PPG signal in real-time on the smart device. This article is concluded with the prototyping of the wireless PPG followed by the verification procedures of the PPG and HRV signals acquired in a laboratory environment. PMID:28959119

  1. Rapid Prototyping of a Smart Device-based Wireless Reflectance Photoplethysmograph.

    Science.gov (United States)

    Ghamari, M; Aguilar, C; Soltanpur, C; Nazeran, H

    2016-03-01

    This paper presents the design, fabrication, and testing of a wireless heart rate (HR) monitoring device based on photoplethysmography (PPG) and smart devices. PPG sensors use infrared (IR) light to obtain vital information to assess cardiac health and other physiologic conditions. The PPG data that are transferred to a computer undergo further processing to derive the Heart Rate Variability (HRV) signal, which is analyzed to generate quantitative markers of the Autonomic Nervous System (ANS). The HRV signal has numerous monitoring and diagnostic applications. To this end, wireless connectivity plays an important role in such biomedical instruments. The photoplethysmograph consists of an optical sensor to detect the changes in the light intensity reflected from the illuminated tissue, a signal conditioning unit to prepare the reflected light for further signal conditioning through amplification and filtering, a low-power microcontroller to control and digitize the analog PPG signal, and a Bluetooth module to transmit the digital data to a Bluetooth-based smart device such as a tablet. An Android app is then used to enable the smart device to acquire and digitally display the received analog PPG signal in real-time on the smart device. This article is concluded with the prototyping of the wireless PPG followed by the verification procedures of the PPG and HRV signals acquired in a laboratory environment.

  2. Monitoring system of hydraulic lifting device based on the fiber optic sensors

    Science.gov (United States)

    Fajkus, Marcel; Nedoma, Jan; Novak, Martin; Martinek, Radek; Vanus, Jan; Mec, Pavel; Vasinek, Vladimir

    2017-10-01

    This article deals with the description of the monitoring system of hydraulic lifting device based on the fiber-optic sensors. For minimize the financial costs of the proposed monitoring system, the power evaluation of measured signal has been chosen. The solution is based on an evaluation of the signal obtained using the single point optic fiber sensors with overlapping reflective spectra. For encapsulation of the sensors was used polydimethylsiloxane (PDMS) polymer. To obtain a information of loading is uses the action of deformation of the lifting device on the pair single point optic fiber sensors mounted on the lifting device of the tested car. According to the proposed algorithm is determined information of pressure with an accuracy of +/- 5 %. Verification of the proposed system was realized on the various types of the tested car with different loading. The original contribution of the paper is to verify the new low-cost system for monitoring the hydraulic lifting device based on the fiber-optic sensors.

  3. Glow discharge based device for solving mazes

    Energy Technology Data Exchange (ETDEWEB)

    Dubinov, Alexander E., E-mail: dubinov-ae@yandex.ru; Mironenko, Maxim S.; Selemir, Victor D. [Russian Federal Nuclear Center − All-Russian Scientific and Research Institute of Experimental Physics (RFNC-VNIIEF), Sarov, Nizhni Novgorod region 607188 (Russian Federation); Sarov Institute of Physics and Technology (SarFTI) of National Research Nuclear University “MEPhI,” Sarov, Nizhni Novgorod region 607188 (Russian Federation); Maksimov, Artem N.; Pylayev, Nikolay A. [Russian Federal Nuclear Center − All-Russian Scientific and Research Institute of Experimental Physics (RFNC-VNIIEF), Sarov, Nizhni Novgorod region 607188 (Russian Federation)

    2014-09-15

    A glow discharge based device for solving mazes has been designed and tested. The device consists of a gas discharge chamber and maze-transformer of radial-azimuth type. It allows changing of the maze pattern in a short period of time (within several minutes). The device has been tested with low pressure air. Once switched on, a glow discharge has been shown to find the shortest way through the maze from the very first attempt, even if there is a section with potential barrier for electrons on the way. It has been found that ionization waves (striations) can be excited in the maze along the length of the plasma channel. The dependancy of discharge voltage on the length of the optimal path through the maze has been measured. A reduction in discharge voltage with one or two potential barriers present has been found and explained. The dependency of the magnitude of discharge ignition voltage on the length of the optimal path through the maze has been measured. The reduction of the ignition voltage with the presence of one or two potential barriers has been observed and explained.

  4. Nanotechnology based devices and applications in medicine: An overview

    Directory of Open Access Journals (Sweden)

    Elvis A Martis

    2012-01-01

    Full Text Available Nanotechnology has been the most explored and extensively studied area in recent times. Many devices which were earlier impossible to imagine, are being developed at a lightning speed with the application of nanotechnology. To overcome the challenges offered by the most dreaded diseases, such as cancer or any disease involving the central nervous system or other inaccessible areas of the human body, nanotechnology has been proved to be a boon in making the treatment more target specific and minimizing the toxicities. This review describes a handful of important devices and applications based on nanotechnology in medicine made in recent times. This article also describes in brief the regulatory concerns and the ethical issues pertaining to nanomedical devices.

  5. Medical devices; immunology and microbiology devices; classification of nucleic acid-based devices for the detection of Mycobacterium tuberculosis complex and the genetic mutations associated with antibiotic resistance. Final order.

    Science.gov (United States)

    2014-10-22

    The Food and Drug Administration (FDA) is classifying nucleic acid-based in vitro diagnostic devices for the detection of Mycobacterium tuberculosis complex (MTB-complex) and the genetic mutations associated with MTB-complex antibiotic resistance in respiratory specimens devices into class II (special controls). The Agency is classifying the device into class II (special controls) because special controls, in addition to general controls, will provide a reasonable assurance of safety and effectiveness of the device.

  6. On the temperature dependence of spin pumping in ferromagnet–topological insulator–ferromagnet spin valves

    Directory of Open Access Journals (Sweden)

    A.A. Baker

    Full Text Available Topological insulators (TIs have a large potential for spintronic devices owing to their spin-polarized, counter-propagating surface states. Recently, we have investigated spin pumping in a ferromagnet–TI–ferromagnet structure at room temperature. Here, we present the temperature-dependent measurement of spin pumping down to 10 K, which shows no variation with temperature. Keywords: Topological insulator, Spin pumping, Spintronics, Ferromagnetic resonance

  7. High Resolution Tracking Devices Based on Capillaries Filled with Liquid Scintillator

    CERN Multimedia

    Bonekamper, D; Vassiltchenko, V; Wolff, T

    2002-01-01

    %RD46 %title\\\\ \\\\The aim of the project is to develop high resolution tracking devices based on thin glass capillary arrays filled with liquid scintillator. This technique provides high hit densities and a position resolution better than 20 $\\mu$m. Further, their radiation hardness makes them superior to other types of tracking devices with comparable performance. Therefore, the technique is attractive for inner tracking in collider experiments, microvertex devices, or active targets for short-lived particle detection. High integration levels in the read-out based on the use of multi-pixel photon detectors and the possibility of optical multiplexing allow to reduce considerably the number of output channels, and, thus, the cost for the detector.\\\\ \\\\New optoelectronic devices have been developed and tested: the megapixel Electron Bombarded CCD (EBCCD), a high resolution image-detector having an outstanding capability of single photo-electron detection; the Vacuum Image Pipeline (VIP), a high-speed gateable pi...

  8. Use of activity theory-based need finding for biomedical device development.

    Science.gov (United States)

    Rismani, Shalaleh; Ratto, Matt; Machiel Van der Loos, H F

    2016-08-01

    Identifying the appropriate needs for biomedical device design is challenging, especially for less structured environments. The paper proposes an alternate need-finding method based on Cultural Historical Activity Theory and expanded to explicitly examine the role of devices within a socioeconomic system. This is compared to a conventional need-finding technique in a preliminary study with engineering student teams. The initial results show that the Activity Theory-based technique allows teams to gain deeper insights into their needs space.

  9. Fabrication of graphene-based flexible devices utilizing a soft lithographic patterning method

    International Nuclear Information System (INIS)

    Wook Jung, Min; Myung, Sung; Woong Kim, Ki; Song, Wooseok; Suk Lee, Sun; Lim, Jongsun; An, Ki-Seok; Jo, You-Young; Park, Chong-Yun

    2014-01-01

    There has been considerable interest in soft lithographic patterning processing of large scale graphene sheets due to the low cost and simplicity of the patterning process along with the exceptional electrical or physical properties of graphene. These properties include an extremely high carrier mobility and excellent mechanical strength. Recently, a study has reported that single layer graphene grown via chemical vapor deposition (CVD) was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp. However, applications are limited because of the challenge of CVD-graphene functionalization for devices such as chemical or bio-sensors. In addition, graphene-based layers patterned with a micron scale width on the surface of biocompatible silk fibroin thin films, which are not suitable for conventional CMOS processes such as the patterning or etching of substrates, have yet to be reported. Herein, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or chemical sensors. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface. As a proof of concept using this soft lithographic patterning technique, we demonstrated a simple and efficient chemical sensor consisting of reduced graphene oxide and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated. Briefly, a soft lithographic patterning process via surface energy modification was developed for advanced graphene-based flexible devices such as transistors or chemical sensors and attachable devices on a

  10. Fabrication of graphene-based flexible devices utilizing a soft lithographic patterning method

    Science.gov (United States)

    Jung, Min Wook; Myung, Sung; Kim, Ki Woong; Song, Wooseok; Jo, You-Young; Lee, Sun Suk; Lim, Jongsun; Park, Chong-Yun; An, Ki-Seok

    2014-07-01

    There has been considerable interest in soft lithographic patterning processing of large scale graphene sheets due to the low cost and simplicity of the patterning process along with the exceptional electrical or physical properties of graphene. These properties include an extremely high carrier mobility and excellent mechanical strength. Recently, a study has reported that single layer graphene grown via chemical vapor deposition (CVD) was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp. However, applications are limited because of the challenge of CVD-graphene functionalization for devices such as chemical or bio-sensors. In addition, graphene-based layers patterned with a micron scale width on the surface of biocompatible silk fibroin thin films, which are not suitable for conventional CMOS processes such as the patterning or etching of substrates, have yet to be reported. Herein, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or chemical sensors. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface. As a proof of concept using this soft lithographic patterning technique, we demonstrated a simple and efficient chemical sensor consisting of reduced graphene oxide and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated. Briefly, a soft lithographic patterning process via surface energy modification was developed for advanced graphene-based flexible devices such as transistors or chemical sensors and attachable devices on a

  11. Non-binary Colour Modulation for Display Device Based on Phase Change Materials

    Science.gov (United States)

    Ji, Hong-Kai; Tong, Hao; Qian, Hang; Hui, Ya-Juan; Liu, Nian; Yan, Peng; Miao, Xiang-Shui

    2016-12-01

    A reflective-type display device based on phase change materials is attractive because of its ultrafast response time and high resolution compared with a conventional display device. This paper proposes and demonstrates a unique display device in which multicolour changing can be achieved on a single device by the selective crystallization of double layer phase change materials. The optical contrast is optimized by the availability of a variety of film thicknesses of two phase change layers. The device exhibits a low sensitivity to the angle of incidence, which is important for display and colour consistency. The non-binary colour rendering on a single device is demonstrated for the first time using optical excitation. The device shows the potential for ultrafast display applications.

  12. Non-binary Colour Modulation for Display Device Based on Phase Change Materials.

    Science.gov (United States)

    Ji, Hong-Kai; Tong, Hao; Qian, Hang; Hui, Ya-Juan; Liu, Nian; Yan, Peng; Miao, Xiang-Shui

    2016-12-19

    A reflective-type display device based on phase change materials is attractive because of its ultrafast response time and high resolution compared with a conventional display device. This paper proposes and demonstrates a unique display device in which multicolour changing can be achieved on a single device by the selective crystallization of double layer phase change materials. The optical contrast is optimized by the availability of a variety of film thicknesses of two phase change layers. The device exhibits a low sensitivity to the angle of incidence, which is important for display and colour consistency. The non-binary colour rendering on a single device is demonstrated for the first time using optical excitation. The device shows the potential for ultrafast display applications.

  13. Protein sequencing via nanopore based devices: a nanofluidics perspective

    Science.gov (United States)

    Chinappi, Mauro; Cecconi, Fabio

    2018-05-01

    Proteins perform a huge number of central functions in living organisms, thus all the new techniques allowing their precise, fast and accurate characterization at single-molecule level certainly represent a burst in proteomics with important biomedical impact. In this review, we describe the recent progresses in the developing of nanopore based devices for protein sequencing. We start with a critical analysis of the main technical requirements for nanopore protein sequencing, summarizing some ideas and methodologies that have recently appeared in the literature. In the last sections, we focus on the physical modelling of the transport phenomena occurring in nanopore based devices. The multiscale nature of the problem is discussed and, in this respect, some of the main possible computational approaches are illustrated.

  14. Silicon nano crystal-based non-volatile memory devices

    International Nuclear Information System (INIS)

    Ng, C.Y.; Chen, T.P.; Sreeduth, D.; Chen, Q.; Ding, L.; Du, A.

    2006-01-01

    In this work, we have investigated the performance and reliability of a Flash memory based on silicon nanocrystal synthesized with very-low energy ion beams. The devices are fabricated with a conventional CMOS process and the size of the nanocrystal is ∼ 4 nm as determined from TEM measurement. Electrical properties of the devices with a tunnel oxide of either 3 nm or 7 nm are evaluated. The devices exhibit good endurance up to 10 5 W/E cycles even at the high operation temperature of 85 deg. C for both the tunnel oxide thicknesses. For the thicker tunnel oxide (i.e., the 7-nm tunnel oxide), a good retention performance with an extrapolated 10-year memory window of ∼ 0.3 V (or ∼ 20% of charge lose after 10 years) is achieved. However, ∼ 70% of charge loss after 10 years is expected for the thinner tunnel oxide (i.e., the 3-nm tunnel oxide)

  15. 77 FR 16126 - Microbiology Devices; Reclassification of Nucleic Acid-Based Systems for Mycobacterium tuberculosis

    Science.gov (United States)

    2012-03-19

    .... FDA-2012-N-0159] Microbiology Devices; Reclassification of Nucleic Acid-Based Systems for... convened a meeting of the Microbiology Devices Panel of the Medical Devices Advisory Committee (Microbiology Devices Panel) on June 29, 2011 (Ref. 2). Although not a formal reclassification meeting, panel...

  16. Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

    KAUST Repository

    Wang, Hong; Du, Yuanmin; Li, Yingtao; Zhu, Bowen; Leow, Wan Ru; Li, Yuangang; Pan, Jisheng; Wu, Tao; Chen, Xiaodong

    2015-01-01

    The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable

  17. Two-ply channels for faster wicking in paper-based microfluidic devices.

    Science.gov (United States)

    Camplisson, Conor K; Schilling, Kevin M; Pedrotti, William L; Stone, Howard A; Martinez, Andres W

    2015-12-07

    This article describes the development of porous two-ply channels for paper-based microfluidic devices that wick fluids significantly faster than conventional, porous, single-ply channels. The two-ply channels were made by stacking two single-ply channels on top of each other and were fabricated entirely out of paper, wax and toner using two commercially available printers, a convection oven and a thermal laminator. The wicking in paper-based channels was studied and modeled using a modified Lucas-Washburn equation to account for the effect of evaporation, and a paper-based titration device incorporating two-ply channels was demonstrated.

  18. A plastic total internal reflection-based photoluminescence device for enzymatic biosensors

    Science.gov (United States)

    Thakkar, Ishan G.

    Growing concerns for quality of water, food and beverages in developing and developed countries drive sizeable markets for mass-producible, low cost devices that can measure the concentration of contaminant chemicals in water, food, and beverages rapidly and accurately. Several fiber-optic enzymatic biosensors have been reported for these applications, but they exhibit very strong presence of scattered excitation light in the signal for sensing, requiring expensive thin-film filters, and their non-planar structure makes them challenging to mass-produce. Several other planar optical waveguide-based biosensors prove to be relatively costly and more fragile due to constituent materials and the techniques involved in their fabrication. So, a plastic total internal reflection (TIR)-based low cost, low scatter, field-portable device for enzymatic biosensors is fabricated and demonstrated. The design concept of the TIR-based photoluminescent enzymatic biosensor device is explained. An analysis of economical materials with appropriate optical and chemical properties is presented. PMMA and PDMS are found to be appropriate due to their high chemical resistance, low cost, high optical transmittance and low auto-fluorescence. The techniques and procedures used for device fabrication are discussed. The device incorporated a PMMA-based optical waveguide core and PDMS-based fluid cell with simple multi-mode fiber-optics using cost-effective fabrication techniques like molding and surface modification. Several techniques of robustly depositing photoluminescent dyes on PMMA core surface are discussed. A pH-sensitive fluorescent dye, fluoresceinamine, and an O2-sensitive phosphorescent dye, Ru(dpp) both are successfully deposited using Si-adhesive gel-based as well as HydroThane-based deposition methods. Two different types of pH-sensors using two different techniques of depositing fluoresceinamine are demonstrated. Also, the effect of concentration of fluoresceinamine-dye molecules

  19. Concepts and Models Regarding the Behavior of Antiseismic Devices for the Base Isolation System

    Directory of Open Access Journals (Sweden)

    Polidor BRATU

    2013-07-01

    Full Text Available The paper presents the main antiseismic devices, as component elements of the base isolation systems, in such a manner that the functional and constructive parameters are correlated with the inertial and stiffness characteristics of the dynamic isolated building. Also, each device will be characterized through a rheological model, which conditions the eigenvalues and eigenvectors spectrum, as well as the dynamic response to an exterior excitation of a seismic nature. In this context, antiseismic devices defined and characterized by the European Standard EN 15129 will be presented. Based on the requirements formulated in the norm, the devices can be identified and their laws of evolution established and checked as follows: antiseismic devices with permanent rigid connection; antiseismic devices with rigid connections with respect to the instantaneous displacement and antiseismic devices dependent on the velocity and on the velocity variation in time.

  20. Three-dimensional spin mapping of antiferromagnetic nanopyramids having spatially alternating surface anisotropy at room temperature.

    Science.gov (United States)

    Wang, Kangkang; Smith, Arthur R

    2012-11-14

    Antiferromagnets play a key role in modern spintronic devices owing to their ability to modify the switching behavior of adjacent ferromagnets via the exchange bias effect. Consequently, detailed measurements of the spin structure at antiferromagnetic interfaces and surfaces are highly desirable, not only for advancing technologies but also for enabling new insights into the underlying physics. Here using spin-polarized scanning tunneling microscopy at room-temperature, we reveal in three-dimensions an orthogonal spin structure on antiferromagnetic compound nanopyramids. Contrary to expected uniaxial anisotropy based on bulk properties, the atomic terraces are found to have alternating in-plane and out-of-plane magnetic anisotropies. The observed layer-wise alternation in anisotropy could have strong influences on future nanoscale spintronic applications.

  1. New memory devices based on the proton transfer process

    Science.gov (United States)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices.

  2. Multiparametric electronic devices based on nuclear tracks

    Energy Technology Data Exchange (ETDEWEB)

    Fink, D. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany)], E-mail: FINK@HMI.DE; Saad, A. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); Basic Science Department, Faculty of Science, Al Balqa University, Salt (Jordan); Dhamodaran, S. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); School of Physics, University of Hyderabad, Hyderabad 500 046 (India); Chandra, A. [HMI Berlin, Glienicker Str. 100, 14109 Berlin (Germany); Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India); Fahrner, W.R. [Chair of Electronic Devices, Institute of Electrotechnique, Fernuniversitaet, Hagen (Germany); Hoppe, K. [South Westfalia University of Applied Sciences, Hagen (Germany); Chadderton, L.T. [Institute of Advanced Studies, ANU Canberra, GPO Box 4, ACT (Australia)

    2008-08-15

    An overview is given on a family of novel electronic devices consisting of an insulating layer containing conducting or semiconducting nuclear tracks, deposited on a semiconducting substrate, and connected by at least one back and two surface contacts. Conducting and semiconducting latent tracks may emerge directly from swift heavy ion irradiation. Etched tracks in insulators can be filled with adequate materials to make them conducting or semiconducting. For this purpose metallic or semiconducting nanoclusters were deposited. We have denoted termed these devices made with latent tracks as 'tunable electronic anisotropic material on semiconductor' (TEAMS), if based on latent ion tracks, and as 'tunable electronic material in pores in oxide on semiconductor' (TEMPOS), if based on etched tracks. Depending on the band-to-band transition between tracks and substrate and on the ratio of surface to track conductivity, the current/voltage characteristics of TEAMS and TEMPOS structures can be modified in many different ways leading to tunable resistors, capacitors and diodes. Both devices show negative differential resistances. This should enable tunable tunneldiodes. TEAMS or TEMPOS structures can be controlled by various external physical and/or chemical parameters leading to sensors. It is even possible to combine different input currents and/or external parameters according to AND/OR logics. The currents through a clustered layer on a TEMPOS structure can be described by the Barbasi-Albert model of network theory enabling to calculate a 'radius of influence'r{sub ROI} around each surface contact, beyond which neighboring contacts do not influence each other. The radius of influence can be well below 1{mu}m leading to nanometric TEMPOS structures.

  3. Multiparametric electronic devices based on nuclear tracks

    International Nuclear Information System (INIS)

    Fink, D.; Saad, A.; Dhamodaran, S.; Chandra, A.; Fahrner, W.R.; Hoppe, K.; Chadderton, L.T.

    2008-01-01

    An overview is given on a family of novel electronic devices consisting of an insulating layer containing conducting or semiconducting nuclear tracks, deposited on a semiconducting substrate, and connected by at least one back and two surface contacts. Conducting and semiconducting latent tracks may emerge directly from swift heavy ion irradiation. Etched tracks in insulators can be filled with adequate materials to make them conducting or semiconducting. For this purpose metallic or semiconducting nanoclusters were deposited. We have denoted termed these devices made with latent tracks as 'tunable electronic anisotropic material on semiconductor' (TEAMS), if based on latent ion tracks, and as 'tunable electronic material in pores in oxide on semiconductor' (TEMPOS), if based on etched tracks. Depending on the band-to-band transition between tracks and substrate and on the ratio of surface to track conductivity, the current/voltage characteristics of TEAMS and TEMPOS structures can be modified in many different ways leading to tunable resistors, capacitors and diodes. Both devices show negative differential resistances. This should enable tunable tunneldiodes. TEAMS or TEMPOS structures can be controlled by various external physical and/or chemical parameters leading to sensors. It is even possible to combine different input currents and/or external parameters according to AND/OR logics. The currents through a clustered layer on a TEMPOS structure can be described by the Barbasi-Albert model of network theory enabling to calculate a 'radius of influence'r ROI around each surface contact, beyond which neighboring contacts do not influence each other. The radius of influence can be well below 1μm leading to nanometric TEMPOS structures

  4. Quantum transport behavior of Ni-based dinuclear complexes in presence of zigzag graphene nanoribbon as electrode

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, Sunandan; Pramanik, Anup; Sarkar, Pranab, E-mail: pranab.sarkar@visva-bharati.ac.in

    2016-10-20

    Highlights: • Quantum transport properties of some Ni-based dinuclear complexes are investigated. • The materials show various spin dependent properties like NDR, spin filtering, etc. • These are occurred by the influence of edge states of zGNR. • Proper tuning of these materials can alter these phenomena. - Abstract: Quantum transport properties of some Ni-based dinuclear complexes with different polydentate organic ligands have been studied by applying abinitio density functional theory along with nonequilibrium Green’s function formulations. It is demonstrated that these materials are capable of showing multifunctional spin dependent properties by the influence of edge states of zigzag edged graphene nanoribbons. The current–voltage characteristics of these materials show spin dependent negative differential resistance behavior, spin filtering effect, and also voltage rectifying property. Proper tuning of these materials can alter these effects which may be utilized in various spintronic devices.

  5. Real-Time Occupant Based Plug-in Device Control Using ICT in Office Buildings

    Directory of Open Access Journals (Sweden)

    Woo-Bin Bae

    2016-03-01

    Full Text Available The purpose of this study is to reduce the unnecessary plug loads used by computers, monitors, and computer peripheral devices, all of which account for more than 95% of the entire plug loads of an office building. To this end, an occupant-based plug-in device control (OBC-P software was developed. The OBC-P software collects real-time information about the presence or absence of occupants who are connected to the access point through the Wifi and controls the power of monitors or computers, while a standby power off device controls computer peripheral devices. To measure the plug load saving of the occupant-based plug-in device control, an experiment was conducted, targeting 10 occupants of three research labs of the graduate school, for two weeks. The experiment results showed that it could save the plug loads of monitors and computer peripheral devices by 15% in the Awake mode, and by 26% in the Sleep mode.

  6. Low-cost rapid prototyping of flexible plastic paper based microfluidic devices

    KAUST Repository

    Fan, Yiqiang

    2013-04-01

    This research presents a novel rapid prototyping method for paper-based flexible microfluidic devices. The microchannels were fabricated using laser ablation on a piece of plastic paper (permanent paper), the dimensions of the microchannels was carefully studied for various laser powers and scanning speeds. After laser ablation of the microchannels on the plastic paper, a transparent poly (methyl methacrylate)(PMMA) film was thermally bonded to the plastic paper to enclose the channels. After connection of tubing, the device was ready to use. An example microfluidic device (droplet generator) was also fabricated using this technique. Due to the flexibility of the fabricated device, this technique can be used to fabricate 3D microfluidic devices. The fabrication process was simple and rapid without any requirement of cleanroom facilities. © 2013 IEEE.

  7. DOE-EPSCoR Final Report Period: September 1, 2008- August 31, 2016

    Energy Technology Data Exchange (ETDEWEB)

    Katiyar, Ram [Univ. of Puerto Rico, Rio Piedras, PR (United States); Gomez, M. [Univ. of Puerto Rico, Rio Piedras, PR (United States); Morell, G. [Univ. of Puerto Rico, Rio Piedras, PR (United States); Fonseca, L. [Univ. of Puerto Rico, Rio Piedras, PR (United States); Ishikawa, Y. [Univ. of Puerto Rico, Rio Piedras, PR (United States); Palai, R. [Univ. of Puerto Rico, Rio Piedras, PR (United States); Thomas, R. [Univ. of Puerto Rico, Rio Piedras, PR (United States); Kumar, A. [Univ. of Puerto Rico, Rio Piedras, PR (United States); Velev, J. [Univ. of Puerto Rico, Rio Piedras, PR (United States); Makarov, V. [Univ. of Puerto Rico, Rio Piedras, PR (United States); Perales, O. [Univ. of Puerto Rico, Mayaguez, PR (United States); Tomar, M. S. [Univ. of Puerto Rico, Mayaguez, PR (United States); Otano, W. [Univ. of Puerto Rico, Cayey, PR (United States)

    2016-10-31

    In this project, multifunctional nanostructured spintronic and magnetoelectric materials were investigated by experimental and computational efforts for applications in energy efficient electronic systems that integrate functionalities and thus have the potential to enable a new generation of faster responding devices and increased integration densities. The team systematically investigated transition metal (TM)-doped ZnO nanostructures, silicide nanorods, magnetoelectric oxides, and ferroelectric/ferromagnetic heterostructures. In what follows, we report the progress made by researchers during the above period in developing and understanding of 1) Spintronics nanostructures; 2) Resistive switching phenomenon in oxides for memory devices; 3) Magnetoelectric multiferroics; 4) Novel high-k gate oxides for logic devices; 5) Two dimensional (2D) materials; and 6) Theoretical studies in the above fields.

  8. DOE-EPSCoR Final Report Period: September 1, 2008- August 31, 2016

    International Nuclear Information System (INIS)

    Katiyar, Ram; Gomez, M.; Morell, G.; Fonseca, L.; Ishikawa, Y.; Palai, R.; Thomas, R.; Kumar, A.; Velev, J.; Makarov, V.; Perales, O.; Tomar, M. S.; Otano, W.

    2016-01-01

    In this project, multifunctional nanostructured spintronic and magnetoelectric materials were investigated by experimental and computational efforts for applications in energy efficient electronic systems that integrate functionalities and thus have the potential to enable a new generation of faster responding devices and increased integration densities. The team systematically investigated transition metal (TM)-doped ZnO nanostructures, silicide nanorods, magnetoelectric oxides, and ferroelectric/ferromagnetic heterostructures. In what follows, we report the progress made by researchers during the above period in developing and understanding of 1) Spintronics nanostructures; 2) Resistive switching phenomenon in oxides for memory devices; 3) Magnetoelectric multiferroics; 4) Novel high-k gate oxides for logic devices; 5) Two dimensional (2D) materials; and 6) Theoretical studies in the above fields.

  9. Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices

    Directory of Open Access Journals (Sweden)

    Meng Chuan Lee

    2013-01-01

    Full Text Available Conventional technology scaling is implemented to meet the insatiable demand of high memory density and low cost per bit of charge storage nonvolatile memory (NVM devices. In this study, effect of technology scaling to anomalous threshold voltage ( variability is investigated thoroughly on postcycled and baked nitride based charge storage NVM devices. After long annealing bake of high temperature, cell’s variability of each subsequent bake increases within stable distribution and found exacerbate by technology scaling. Apparent activation energy of this anomalous variability was derived through Arrhenius plots. Apparent activation energy (Eaa of this anomalous variability is 0.67 eV at sub-40 nm devices which is a reduction of approximately 2 times from 110 nm devices. Technology scaling clearly aggravates this anomalous variability, and this poses reliability challenges to applications that demand strict control, for example, reference cells that govern fundamental program, erase, and verify operations of NVM devices. Based on critical evidence, this anomalous variability is attributed to lateral displacement of trapped charges in nitride storage layer. Reliability implications of this study are elucidated. Moreover, potential mitigation methods are proposed to complement technology scaling to prolong the front-runner role of nitride based charge storage NVM in semiconductor flash memory market.

  10. Broadband illusion optical devices based on conformal mappings

    Science.gov (United States)

    Xiong, Zhan; Xu, Lin; Xu, Ya-Dong; Chen, Huan-Yang

    2017-10-01

    In this paper, we propose a simple method of illusion optics based on conformal mappings. By carefully developing designs with specific conformal mappings, one can make an object look like another with a significantly different shape. In addition, the illusion optical devices can work in a broadband of frequencies.

  11. [Advances on enzymes and enzyme inhibitors research based on microfluidic devices].

    Science.gov (United States)

    Hou, Feng-Hua; Ye, Jian-Qing; Chen, Zuan-Guang; Cheng, Zhi-Yi

    2010-06-01

    With the continuous development in microfluidic fabrication technology, microfluidic analysis has evolved from a concept to one of research frontiers in last twenty years. The research of enzymes and enzyme inhibitors based on microfluidic devices has also made great progress. Microfluidic technology improved greatly the analytical performance of the research of enzymes and enzyme inhibitors by reducing the consumption of reagents, decreasing the analysis time, and developing automation. This review focuses on the development and classification of enzymes and enzyme inhibitors research based on microfluidic devices.

  12. Use-related risk analysis for medical devices based on improved FMEA.

    Science.gov (United States)

    Liu, Long; Shuai, Ma; Wang, Zhu; Li, Ping

    2012-01-01

    In order to effectively analyze and control use-related risk of medical devices, quantitative methodologies must be applied. Failure Mode and Effects Analysis (FMEA) is a proactive technique for error detection and risk reduction. In this article, an improved FMEA based on Fuzzy Mathematics and Grey Relational Theory is developed to better carry out user-related risk analysis for medical devices. As an example, the analysis process using this improved FMEA method for a certain medical device (C-arm X-ray machine) is described.

  13. Asphaltene based photovoltaic devices

    Science.gov (United States)

    Chianelli, Russell R.; Castillo, Karina; Gupta, Vipin; Qudah, Ali M.; Torres, Brenda; Abujnah, Rajib E.

    2016-03-22

    Photovoltaic devices and methods of making the same, are disclosed herein. The cell comprises a photovoltaic device that comprises a first electrically conductive layer comprising a photo-sensitized electrode; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution comprising at least one asphaltene fraction, wherein the metal-oxide particles are optionally dispersed in a surfactant; and a second electrically conductive layer comprising a counter-electrode, wherein the second electrically conductive layer comprises one or more conductive elements comprising carbon, graphite, soot, carbon allotropes or any combinations thereof.

  14. Observation of the anomalous Hall effect in GaAs

    International Nuclear Information System (INIS)

    Miah, M Idrish

    2007-01-01

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect

  15. Observation of the anomalous Hall effect in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M Idrish [Nanoscale Science and Technology Centre, School of Science, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331 (Bangladesh)

    2007-03-21

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect.

  16. GaN light-emitting device based on ionic liquid electrolyte

    Science.gov (United States)

    Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi

    2018-06-01

    Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.

  17. Colossal magnetoresistance in amino-functionalized graphene quantum dots at room temperature: manifestation of weak anti-localization and doorway to spintronics

    Science.gov (United States)

    Roy, Rajarshi; Thapa, Ranjit; Kumar, Gundam Sandeep; Mazumder, Nilesh; Sen, Dipayan; Sinthika, S.; Das, Nirmalya S.; Chattopadhyay, Kalyan K.

    2016-04-01

    In this work, we have demonstrated the signatures of localized surface distortions and disorders in functionalized graphene quantum dots (fGQD) and consequences in magneto-transport under weak field regime (~1 Tesla) at room temperature. Observed positive colossal magnetoresistance (MR) and its suppression is primarily explained by weak anti-localization phenomenon where competitive valley (inter and intra) dependent scattering takes place at room temperature under low magnetic field; analogous to low mobility disordered graphene samples. Furthermore, using ab-initio analysis we show that sub-lattice sensitive spin-polarized ground state exists in the GQD as a result of pz orbital asymmetry in GQD carbon atoms with amino functional groups. This spin polarized ground state is believed to help the weak anti-localization dependent magneto transport by generating more disorder and strain in a GQD lattice under applied magnetic field and lays the premise for future graphene quantum dot based spintronic applications.In this work, we have demonstrated the signatures of localized surface distortions and disorders in functionalized graphene quantum dots (fGQD) and consequences in magneto-transport under weak field regime (~1 Tesla) at room temperature. Observed positive colossal magnetoresistance (MR) and its suppression is primarily explained by weak anti-localization phenomenon where competitive valley (inter and intra) dependent scattering takes place at room temperature under low magnetic field; analogous to low mobility disordered graphene samples. Furthermore, using ab-initio analysis we show that sub-lattice sensitive spin-polarized ground state exists in the GQD as a result of pz orbital asymmetry in GQD carbon atoms with amino functional groups. This spin polarized ground state is believed to help the weak anti-localization dependent magneto transport by generating more disorder and strain in a GQD lattice under applied magnetic field and lays the premise for

  18. Electric control of antiferromagnets

    OpenAIRE

    Fina, I.; Marti, X.

    2016-01-01

    In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in critical parts of the devices. The numerous research efforts directed to manipulate and probe the magnetic moments in antiferromagnets have been gradually established a new and independent field known as antiferromagnetic spintronics. In this paper, we focus on the electrical control and detection of antiferromagnetic moments at a constant tem...

  19. Research on SOI-based micro-resonator devices

    Science.gov (United States)

    Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

    2010-10-01

    SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of 10 Gbit/s high speed microring modulators.

  20. Neuromimetic Circuits with Synaptic Devices Based on Strongly Correlated Electron Systems

    Science.gov (United States)

    Ha, Sieu D.; Shi, Jian; Meroz, Yasmine; Mahadevan, L.; Ramanathan, Shriram

    2014-12-01

    Strongly correlated electron systems such as the rare-earth nickelates (R NiO3 , R denotes a rare-earth element) can exhibit synapselike continuous long-term potentiation and depression when gated with ionic liquids; exploiting the extreme sensitivity of coupled charge, spin, orbital, and lattice degrees of freedom to stoichiometry. We present experimental real-time, device-level classical conditioning and unlearning using nickelate-based synaptic devices in an electronic circuit compatible with both excitatory and inhibitory neurons. We establish a physical model for the device behavior based on electric-field-driven coupled ionic-electronic diffusion that can be utilized for design of more complex systems. We use the model to simulate a variety of associate and nonassociative learning mechanisms, as well as a feedforward recurrent network for storing memory. Our circuit intuitively parallels biological neural architectures, and it can be readily generalized to other forms of cellular learning and extinction. The simulation of neural function with electronic device analogs may provide insight into biological processes such as decision making, learning, and adaptation, while facilitating advanced parallel information processing in hardware.

  1. Paper-Plastic Hybrid Microfluidic Device for Smartphone-Based Colorimetric Analysis of Urine.

    Science.gov (United States)

    Jalal, Uddin M; Jin, Gyeong Jun; Shim, Joon S

    2017-12-19

    In this work, a disposable paper-plastic hybrid microfluidic lab-on-a-chip (LOC) has been developed and successfully applied for the colorimetric measurement of urine by the smartphone-based optical platform using a "UrineAnalysis" Android app. The developed device was cost-effectively implemented as a stand-alone hybrid LOC by incorporating the paper-based conventional reagent test strip inside the plastic-based LOC microchannel. The LOC device quantitatively investigated the small volume (40 μL) of urine analytes for the colorimetric reaction of glucose, protein, pH, and red blood cell (RBC) in integration with the finger-actuating micropump. On the basis of our experiments, the conventional urine strip showed large deviation as the reaction time goes by, because dipping the strip sensor in a bottle of urine could not control the reaction volume. By integrating the strip sensor in the LOC device for urine analysis, our device significantly improves the time-dependent inconstancy of the conventional dipstick-based urine strip, and the smartphone app used for image analysis enhances the visual assessment of the test strip, which is a major user concern for the colorimetric analysis in point-of-care (POC) applications. As a result, the user-friendly LOC, which is successfully implemented in a disposable format with the smartphone-based optical platform, may be applicable as an effective tool for rapid and qualitative POC urinalysis.

  2. An implantable thermoresponsive drug delivery system based on Peltier device.

    Science.gov (United States)

    Yang, Rongbing; Gorelov, Alexander V; Aldabbagh, Fawaz; Carroll, William M; Rochev, Yury

    2013-04-15

    Locally dropping the temperature in vivo is the main obstacle to the clinical use of a thermoresponsive drug delivery system. In this paper, a Peltier electronic element is incorporated with a thermoresponsive thin film based drug delivery system to form a new drug delivery device which can regulate the release of rhodamine B in a water environment at 37 °C. Various current signals are used to control the temperature of the cold side of the Peltier device and the volume of water on top of the Peltier device affects the change in temperature. The pulsatile on-demand release profile of the model drug is obtained by turning the current signal on and off. The work has shown that the 2600 mAh power source is enough to power this device for 1.3 h. Furthermore, the excessive heat will not cause thermal damage in the body as it will be dissipated by the thermoregulation of the human body. Therefore, this simple novel device can be implanted and should work well in vivo. Copyright © 2013 Elsevier B.V. All rights reserved.

  3. New memory devices based on the proton transfer process

    International Nuclear Information System (INIS)

    Wierzbowska, Małgorzata

    2016-01-01

    Memory devices operating due to the fast proton transfer (PT) process are proposed by the means of first-principles calculations. Writing  information is performed using the electrostatic potential of scanning tunneling microscopy (STM). Reading information is based on the effect of the local magnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge—saturated with oxygen or the hydroxy group—and can be realized with the use of giant magnetoresistance (GMR), a magnetic tunnel junction or spin-transfer torque devices. The energetic barriers for the hop forward and backward processes can be tuned by the distance and potential of the STM tip; this thus enables us to tailor the non-volatile logic states. The proposed system enables very dense packing of the logic cells and could be used in random access and flash memory devices. (paper)

  4. User-independent accelerometer-based gesture recognition for mobile devices

    Directory of Open Access Journals (Sweden)

    Eduardo METOLA

    2013-07-01

    Full Text Available Many mobile devices embed nowadays inertial sensors. This enables new forms of human-computer interaction through the use of gestures (movements performed with the mobile device as a way of communication. This paper presents an accelerometer-based gesture recognition system for mobile devices which is able to recognize a collection of 10 different hand gestures. The system was conceived to be light and to operate in a user-independent manner in real time. The recognition system was implemented in a smart phone and evaluated through a collection of user tests, which showed a recognition accuracy similar to other state-of-the art techniques and a lower computational complexity. The system was also used to build a human-robot interface that enables controlling a wheeled robot with the gestures made with the mobile phone

  5. Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications.

    Science.gov (United States)

    Zeng, Wei; Shu, Lin; Li, Qiao; Chen, Song; Wang, Fei; Tao, Xiao-Ming

    2014-08-20

    Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Coupling Photonics and Coherent Spintronics for Low-Loss Flexible Optical Logic

    Science.gov (United States)

    2015-12-02

    into devices, ranging from macroscopic optical cavities, to arrays of microlens cavities, to quantum dot-impregnated integrated polymer waveguides...spins   in   semiconductor   nanocrystal   quantum   dots   (NCQDs),   with   the   particular   aim   of   enabling   spin... lock -­‐in   based   detection.   The   pump   and   probe   lasers   are   then   used   for   a   Faraday   rotation

  7. Effect of dielectric layers on device stability of pentacene-based field-effect transistors.

    Science.gov (United States)

    Di, Chong-an; Yu, Gui; Liu, Yunqi; Guo, Yunlong; Sun, Xiangnan; Zheng, Jian; Wen, Yugeng; Wang, Ying; Wu, Weiping; Zhu, Daoben

    2009-09-07

    We report stable organic field-effect transistors (OFETs) based on pentacene. It was found that device stability strongly depends on the dielectric layer. Pentacene thin-film transistors based on the bare or polystyrene-modified SiO(2) gate dielectrics exhibit excellent electrical stabilities. In contrast, the devices with the octadecyltrichlorosilane (OTS)-treated SiO(2) dielectric layer showed the worst stabilities. The effects of the different dielectrics on the device stabilities were investigated. We found that the surface energy of the gate dielectric plays a crucial role in determining the stability of the pentacene thin film, device performance and degradation of electrical properties. Pentacene aggregation, phase transfer and film morphology are also important factors that influence the device stability of pentacene devices. As a result of the surface energy mismatch between the dielectric layer and organic semiconductor, the electronic performance was degraded. Moreover, when pentacene was deposited on the OTS-treated SiO(2) dielectric layer with very low surface energy, pentacene aggregation occurred and resulted in a dramatic decrease of device performance. These results demonstrated that the stable OFETs could be obtained by using pentacene as a semiconductor layer.

  8. Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

    International Nuclear Information System (INIS)

    Hung Nguyen, V; Mazzamuto, F; Saint-Martin, J; Bournel, A; Dollfus, P

    2012-01-01

    Using atomistic quantum simulation based on a tight binding model, we have investigated the transport characteristics of graphene nanomesh-based devices and evaluated the possibilities of observing negative differential conductance. It is shown that by taking advantage of bandgap opening in the graphene nanomesh lattice, a strong negative differential conductance effect can be achieved at room temperature in pn junctions and n-doped structures. Remarkably, the effect is improved very significantly (with a peak-to-valley current ratio of a few hundred) and appears to be weakly sensitive to the transition length in graphene nanomesh pn hetero-junctions when inserting a pristine (gapless) graphene section in the transition region between n and p zones. The study therefore suggests new design strategies for graphene electronic devices which may offer strong advantages in terms of performance and processing over the devices studied previously. (paper)

  9. Electrochromic device based on electrospun WO{sub 3} nanofibers

    Energy Technology Data Exchange (ETDEWEB)

    Dulgerbaki, Cigdem; Maslakci, Neslihan Nohut; Komur, Ali Ihsan; Oksuz, Aysegul Uygun, E-mail: ayseguluygun@sdu.edu.tr

    2015-12-15

    Highlights: • WO{sub 3} electrochromic nanofibers were prepared by electrospinning technique. • WO{sub 3} nanofibers switched reversibly from transparent to blue color. • Electrochromic device was assembled using ionic liquid based gel electrolyte. • Significant optical modulation and excellent cycling stability were achieved for ECD. - Abstract: The tungsten oxide (WO{sub 3}) nanofibers were grown directly onto an ITO-coated glass via an electrospinning method for electrochromic applications. The electrochromic properties of WO{sub 3} nanofibers were investigated in the presence of different electrolytes including a series of ionic liquids and classic LiClO{sub 4}-PC system. A significant optical modulation of 20.82% at 760 nm, reversible coloration with efficiency of 64.58 cm{sup 2}/C and excellent cycling stability were achieved for the nanofiber electrochromic device (ECD) with ionic liquid based gel electrolyte.

  10. Disposable Electrochemical Immunosensor Diagnosis Device Based on Nanoparticle Probe and Immunochromatographic Strip

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Guodong; Lin, Ying-Ying; Wang, Jun; Wu, Hong; Wai, Chien M.; Lin, Yuehe

    2007-10-15

    We describe a disposable electrochemical immunosensor diagnosis device that is based on the immunochromatographic strip technique and an electrochemical immunoassay based on quantum dot (QD, CdS@ZnS) labels. The device takes advantage of the speed and low-cost of the conventional immunochromatographic strip test and the high-sensitivity of the nanoparticle-based electrochemical immunoassay. A sandwich immunoreaction was performed on the immunochromatographic strip, and the captured QD labels in the test zone were determined by highly sensitive stripping voltammetric measurement of the dissolved metallic component (cadmium) with a disposable-screen-printed electrode, which is embedded underneath the membrane on the test zone. The new device coupled with a portable electrochemical analyzer shows great promise for in-field and point-of-care quantitative testing of disease-related protein biomarkers. The parameters (e.g., voltammetric measurement of QD labels, antibody immobilization, the loading amount of QD-antibody, and the immunoreaction time) that govern the sensitivity and reproducibility of the device were optimized with IgG model analyte. The voltammetric response of the optimized device is highly linear over the range of 0.1 to 10 ng mL-1 IgG, and the limit of detection is estimated to be 30 pg mL-1 in association with a 7-min immunoreaction time. The detection limit was improved to 10 pg mL-1 using a 20-min immunoreaction time. The new disposable electrochemical diagnosis device thus provides a more user-friendly, rapid, clinically accurate, less expensive, and quantitative tool for protein detection.

  11. Electrical detection of proton-spin motion in a polymer device at room temperature

    Science.gov (United States)

    Boehme, Christoph

    With the emergence of spintronics concepts based on organic semiconductors there has been renewed interest in the role of both, electron as well as nuclear spin states for the magneto-optoelectronic properties of these materials. In spite of decades of research on these molecular systems, there is still much need for an understanding of some of the fundamental properties of spin-controlled charge carrier transport and recombination processes. This presentation focuses on mechanisms that allow proton spin states to influence electronic transition rates in organic semiconductors. Remarkably, even at low-magnetic field conditions and room temperature, nuclear spin states with energy splittings orders of magnitude below thermal energies are able to influence observables like magnetoresistance and fluorescence. While proton spins couple to charge carrier spins via hyperfine interaction, there has been considerable debate about the nature of the electronic processes that are highly susceptible to these weak hyperfine fields. Here, experiments are presented which show how the magnetic resonant manipulation of electron and nuclear spin states in a π-conjugated polymer device causes changes of the device current. The experiments confirm the extraordinary sensitivity of electronic transitions to very weak magnetic field changes and underscore the potential significance of spin-selection rules for highly sensitive absolute magnetic fields sensor concepts. However, the relevance of these magnetic-field sensitive spin-dependent electron transitions is not just limited to semiconductor materials but also radical pair chemistry and even avian magnetoreceptors This work was supported by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award #DE-SC0000909. The Utah NSF - MRSEC program #DMR 1121252 is acknowledged for instrumentation support.

  12. Numerical analysis of a polysilicon-based resistive memory device

    KAUST Repository

    Berco, Dan; Chand, Umesh

    2018-01-01

    This study investigates a conductive bridge resistive memory device based on a Cu top electrode, 10-nm polysilicon resistive switching layer and a TiN bottom electrode, by numerical analysis for $$10^{3}$$103 programming and erase simulation cycles

  13. Nonlinear Optimization-Based Device-Free Localization with Outlier Link Rejection

    Directory of Open Access Journals (Sweden)

    Wendong Xiao

    2015-04-01

    Full Text Available Device-free localization (DFL is an emerging wireless technique for estimating the location of target that does not have any attached electronic device. It has found extensive use in Smart City applications such as healthcare at home and hospitals, location-based services at smart spaces, city emergency response and infrastructure security. In DFL, wireless devices are used as sensors that can sense the target by transmitting and receiving wireless signals collaboratively. Many DFL systems are implemented based on received signal strength (RSS measurements and the location of the target is estimated by detecting the changes of the RSS measurements of the wireless links. Due to the uncertainty of the wireless channel, certain links may be seriously polluted and result in erroneous detection. In this paper, we propose a novel nonlinear optimization approach with outlier link rejection (NOOLR for RSS-based DFL. It consists of three key strategies, including: (1 affected link identification by differential RSS detection; (2 outlier link rejection via geometrical positional relationship among links; (3 target location estimation by formulating and solving a nonlinear optimization problem. Experimental results demonstrate that NOOLR is robust to the fluctuation of the wireless signals with superior localization accuracy compared with the existing Radio Tomographic Imaging (RTI approach.

  14. A Transfer Hamiltonian Model for Devices Based on Quantum Dot Arrays

    Directory of Open Access Journals (Sweden)

    S. Illera

    2015-01-01

    Full Text Available We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide.

  15. Analysis of Android Device-Based Solutions for Fall Detection

    Directory of Open Access Journals (Sweden)

    Eduardo Casilari

    2015-07-01

    Full Text Available Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources to fall detection solutions.

  16. Analysis of Android Device-Based Solutions for Fall Detection.

    Science.gov (United States)

    Casilari, Eduardo; Luque, Rafael; Morón, María-José

    2015-07-23

    Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs) has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones) have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources) to fall detection solutions.

  17. Analysis of Android Device-Based Solutions for Fall Detection

    Science.gov (United States)

    Casilari, Eduardo; Luque, Rafael; Morón, María-José

    2015-01-01

    Falls are a major cause of health and psychological problems as well as hospitalization costs among older adults. Thus, the investigation on automatic Fall Detection Systems (FDSs) has received special attention from the research community during the last decade. In this area, the widespread popularity, decreasing price, computing capabilities, built-in sensors and multiplicity of wireless interfaces of Android-based devices (especially smartphones) have fostered the adoption of this technology to deploy wearable and inexpensive architectures for fall detection. This paper presents a critical and thorough analysis of those existing fall detection systems that are based on Android devices. The review systematically classifies and compares the proposals of the literature taking into account different criteria such as the system architecture, the employed sensors, the detection algorithm or the response in case of a fall alarms. The study emphasizes the analysis of the evaluation methods that are employed to assess the effectiveness of the detection process. The review reveals the complete lack of a reference framework to validate and compare the proposals. In addition, the study also shows that most research works do not evaluate the actual applicability of the Android devices (with limited battery and computing resources) to fall detection solutions. PMID:26213928

  18. Memristive device based learning for navigation in robots.

    Science.gov (United States)

    Sarim, Mohammad; Kumar, Manish; Jha, Rashmi; Minai, Ali A

    2017-11-08

    Biomimetic robots have gained attention recently for various applications ranging from resource hunting to search and rescue operations during disasters. Biological species are known to intuitively learn from the environment, gather and process data, and make appropriate decisions. Such sophisticated computing capabilities in robots are difficult to achieve, especially if done in real-time with ultra-low energy consumption. Here, we present a novel memristive device based learning architecture for robots. Two terminal memristive devices with resistive switching of oxide layer are modeled in a crossbar array to develop a neuromorphic platform that can impart active real-time learning capabilities in a robot. This approach is validated by navigating a robot vehicle in an unknown environment with randomly placed obstacles. Further, the proposed scheme is compared with reinforcement learning based algorithms using local and global knowledge of the environment. The simulation as well as experimental results corroborate the validity and potential of the proposed learning scheme for robots. The results also show that our learning scheme approaches an optimal solution for some environment layouts in robot navigation.

  19. Photonic devices based on black phosphorus and related hybrid materials

    International Nuclear Information System (INIS)

    Vitiello, M.S.; Viti, L.

    2016-01-01

    Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective means for the manipulation and control of carriers, from the visible to the far-infrared, leading to the development of highly efficient devices like sources, detectors and modulators. The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in devices based on inorganic two-dimensional (2D) materials. Amongst them, black phosphorus (BP) recently showed an extraordinary potential in a variety of applications across micro-electronics and photonics. With an energy gap between the gapless graphene and the larger gap transition metal dichalcogenides, BP can form the basis for a new generation of high-performance photonic devices that could be specifically engineered to comply with different applications, like transparent saturable absorbers, fast photocounductive switches and low noise photodetectors, exploiting its peculiar electrical, thermal and optical anisotropy. This paper will review the latest achievements in black-phosphorus–based THz photonics and discuss future perspectives of this rapidly developing research field.

  20. Analytical Devices Based on Direct Synthesis of DNA on Paper.

    Science.gov (United States)

    Glavan, Ana C; Niu, Jia; Chen, Zhen; Güder, Firat; Cheng, Chao-Min; Liu, David; Whitesides, George M

    2016-01-05

    This paper addresses a growing need in clinical diagnostics for parallel, multiplex analysis of biomarkers from small biological samples. It describes a new procedure for assembling arrays of ssDNA and proteins on paper. This method starts with the synthesis of DNA oligonucleotides covalently linked to paper and proceeds to assemble microzones of DNA-conjugated paper into arrays capable of simultaneously capturing DNA, DNA-conjugated protein antigens, and DNA-conjugated antibodies. The synthesis of ssDNA oligonucleotides on paper is convenient and effective with 32% of the oligonucleotides cleaved and eluted from the paper substrate being full-length by HPLC for a 32-mer. These ssDNA arrays can be used to detect fluorophore-linked DNA oligonucleotides in solution, and as the basis for DNA-directed assembly of arrays of DNA-conjugated capture antibodies on paper, detect protein antigens by sandwich ELISAs. Paper-anchored ssDNA arrays with different sequences can be used to assemble paper-based devices capable of detecting DNA and antibodies in the same device and enable simple microfluidic paper-based devices.

  1. A new repeatable, optical writing and electrical erasing device based on photochromism and electrochromism of viologen

    International Nuclear Information System (INIS)

    Gao, Li-ping; Wei, Jian; Wang, Yue-chuan; Ding, Guo-jing; Yang, Yu-lin

    2012-01-01

    New optical writing and electrical erasing devices have been successfully fabricated that exploit the photochromism and electrochromism of viologen. In a preliminary study, both the structures of viologen and device were investigated in detail by UV–vis spectra in order to confirm their effects on the optical writing and electrical erasing performances of corresponding devices. For sandwiched, single and complementary devices based on benzyl viologen (BV 2+ ), only optical writing can be performed, not electrical erasing operations, which indicated these devices cannot realize optical information rewriting. For single and complementary devices based on styrene-functional viologen (V BV 2+ ) and acrylic-functional viologen (ACV 2+ ), optical writing and electrical erasing operations can be reversibly performed and optical information rewriting realized. It is clear that single devices based on V BV 2+ and ACV 2+ possess better performance accompanied with contrast without significant degradation and bleaching times and without significant deterioration over 10 repeated writing/erasing cycles. Furthermore, we put forward possible mechanisms for sandwiched, single and complementary devices based on V BV 2+ and ACV 2+ for the optical writing and electrical erasing operations. This study provides a new strategy to design optical writing and electrical erasing devices to realize optical information rewriting. (paper)

  2. Second Law based definition of passivity/activity of devices

    Science.gov (United States)

    Sundqvist, Kyle M.; Ferry, David K.; Kish, Laszlo B.

    2017-10-01

    Recently, our efforts to clarify the old question, if a memristor is a passive or active device [1], triggered debates between engineers, who have had advanced definitions of passivity/activity of devices, and physicists with significantly different views about this seemingly simple question. This debate triggered our efforts to test the well-known engineering concepts about passivity/activity in a deeper way, challenging them by statistical physics. It is shown that the advanced engineering definition of passivity/activity of devices is self-contradictory when a thermodynamical system executing Johnson-Nyquist noise is present. A new, statistical physical, self-consistent definition based on the Second Law of Thermodynamics is introduced. It is also shown that, in a system with uniform temperature distribution, any rectifier circuitry that can rectify thermal noise must contain an active circuit element, according to both the engineering and statistical physical definitions.

  3. Half-metallic ferromagnetism prediction in MoS2-based two-dimensional superlattice from first-principles

    Science.gov (United States)

    Wen, Yan-Ni; Gao, Peng-Fei; Xia, Ming-Gang; Zhang, Sheng-Li

    2018-03-01

    Half-metallic ferromagnetism (HMFM) has great potential application in spin filter. However, it is extremely rare, especially in two-dimensional (2D) materials. At present, 2D materials have drawn international interest in spintronic devices. Here, we use ab initio density functional theory (DFT) calculations to study the structural stability and electrical and magnetic properties of the MoS2-based 2D superlattice formed by inserting graphene hexagonal ring in 6 × 6 × 1 MoS2 supercell. Two kinds of structures with hexagonal carbon ring were predicted with structural stability and were shown HMFM. The two structures combine the spin transport capacity of graphene with the magnetism of the defective 2D MoS2. And they have strong covalent bonding between the C and S or Mo atoms near the interface. This work is very useful to help us to design reasonable MoS2-based spin filter.

  4. Medical Device Integration Model Based on the Internet of Things

    Science.gov (United States)

    Hao, Aiyu; Wang, Ling

    2015-01-01

    At present, hospitals in our country have basically established the HIS system, which manages registration, treatment, and charge, among many others, of patients. During treatment, patients need to use medical devices repeatedly to acquire all sorts of inspection data. Currently, the output data of the medical devices are often manually input into information system, which is easy to get wrong or easy to cause mismatches between inspection reports and patients. For some small hospitals of which information construction is still relatively weak, the information generated by the devices is still presented in the form of paper reports. When doctors or patients want to have access to the data at a given time again, they can only look at the paper files. Data integration between medical devices has long been a difficult problem for the medical information system, because the data from medical devices are lack of mandatory unified global standards and have outstanding heterogeneity of devices. In order to protect their own interests, manufacturers use special protocols, etc., thus causing medical decices to still be the "lonely island" of hospital information system. Besides, unfocused application of the data will lead to failure to achieve a reasonable distribution of medical resources. With the deepening of IT construction in hospitals, medical information systems will be bound to develop towards mobile applications, intelligent analysis, and interconnection and interworking, on the premise that there is an effective medical device integration (MDI) technology. To this end, this paper presents a MDI model based on the Internet of Things (IoT). Through abstract classification, this model is able to extract the common characteristics of the devices, resolve the heterogeneous differences between them, and employ a unified protocol to integrate data between devices. And by the IoT technology, it realizes interconnection network of devices and conducts associate matching

  5. Direct spraying method for fabrication of paper-based microfluidic devices

    International Nuclear Information System (INIS)

    Liu, Ning; An, Hong-Jie; Lew, Wen Siang; Xu, Jing; Phan, Dinh-Tuan; Hashimoto, Michinao

    2017-01-01

    Direct spraying of hydrophobic materials is an affordable, easy-to-use and equipment-free method for fabrication of flexible microsensors, albeit not yet widely adopted. To explore its application potential, in this paper, we propose and demonstrate two novel hybrid methods to fabricate paper-based components. Firstly, through combing direct spraying with Parafilm embedding, a leak-free paper-based sample preconcentrator for fluorescence sensing was fabricated. The leak-free device worked on the principle of ion concentration polarization (ICP) effect, and achieved enhancement of fluorescent tracer by 220 folds on a paper substrate. Secondly, by using the sprayed hydrophobic patterns, paper-based microsized supercapacitors (mSCs) were fabricated. Vacuum filtration was used to deposit multi-wall carbon nanotubes (MWCNT)-dispersed solution on a porous substrate to form electrodes. A volumetric capacitance of 42.5 mF cm −3 at a current density of 2 mA cm −3 was obtained on the paper-based mSC. Our demonstrations have shown the versatility of direct spraying for the fabrication of integrative paper-based microfluidic devices. (paper)

  6. Viseu Mobile: A location based Augmented Reality tour guide for mobile devices

    Directory of Open Access Journals (Sweden)

    M.L. Martins

    2015-11-01

    Full Text Available This article reports on the project "Viseu na Palma da Mão", which is based on a Augmented Reality app for mobile devices, whose main purpose is to maximise the tourists’ experience when visiting the town of Viseu. The paper starts by presenting a reflection on Augmented Reality and its potential and applications, with a special emphasis on the tourism industry. The increasing possibility to access the Internet anytime, anywhere, together with the unprecedented growth of mobile device penetration has boosted the development of specific applications that seek to respond to the increasing demands of tourists. It is on this premise that the app Viseu Mobile emerges, seeking to enhance the constant use of mobile devices, and making them act as a personal tour guide, based on location based information. The different stages of development and different features of the application are also explained

  7. Microcomputer based test system for charge coupled devices

    International Nuclear Information System (INIS)

    Sidman, S.

    1981-02-01

    A microcomputer based system for testing analog charge coupled integrated circuits has been developed. It measures device performance for three parameters: dynamic range, baseline shift due to leakage current, and transfer efficiency. A companion board tester has also been developed. The software consists of a collection of BASIC and assembly language routines developed on the test system microcomputer

  8. Origin of spin-polarization in edge boron doped zigzag graphene nanoribbon: a potential spin filter.

    Science.gov (United States)

    Chakrabarty, Soubhik; Wasey, A H M Abdul; Thapa, Ranjit; Das, Gour Prasad

    2018-06-04

    To realize the graphene based spintronic device the prime challenge is to control the electronic structure of edges. In this work we find the origin of spin filtering property in edge boron doped zigzag graphene nanoribbon (ZGNRs) and provide a guide to prepare the graphene based next generation spin filter based device. Here we unveil the role of orbital (p-electron) to tune the electronic, magnetic and transport properties of the edge B doped ZGNRs. When all the edge carbon atoms at one of the edges of ZGNRs are replaced by B (100% edge B-doping), the system undergoes semiconductor to metal transition. The role of passivation of the edge with single/double atomic hydrogen on the electronic properties and its relation with the p electron is correlated in-depth. 50% edge B-doped ZGNRs (50% of the edge C atoms at one of the edges are replaced by B) also shows half-metallicity when the doped edge is left unpassivated. The half-metallic systems show 100% spin-filtering efficiency for a wide range of bias voltages. Zero bias transmission function of the other configurations shows asymmetric behavior for the up and down spin channels, thereby indicating their possible application potential in nano-spintronics. © 2018 IOP Publishing Ltd.

  9. Flexible Graphene-based Energy Storage Devices for Space Application Project

    Science.gov (United States)

    Calle, Carlos I.

    2014-01-01

    Develop prototype graphene-based reversible energy storage devices that are flexible, thin, lightweight, durable, and that can be easily attached to spacesuits, rovers, landers, and equipment used in space.

  10. Ontology-Driven Instant Messaging-Based Dialogue System for Device Control

    KAUST Repository

    Noguera-Arnaldos, José Ángel

    2015-10-14

    The im4Things platform aims to develop a communication interface for devices in the Internet of the Things (IoT) through intelligent dialogue based on written natural language over instant messaging services. This type of communication can be established in different ways such as order sending and, status querying. Also, the devices themselves are responsible for alerting users when a change has been produced in the device’s sensors. The system has been validated and it has obtained promising results.

  11. Microfiber devices based on carbon materials

    OpenAIRE

    Gengzhi Sun; Xuewan Wang; Peng Chen

    2015-01-01

    Microfiber devices are able to extend the micro/nano functionalities of materials or devices to the macroscopic scale with excellent flexibility and weavability, promising a variety of unique applications and, sometimes, also improved performance as compared with bulk counterparts. The fiber electrodes in these devices are often made of carbon materials (e.g. carbon nanotubes and graphene) because of their exceptional electrical, mechanical, and structural properties. Covering the latest deve...

  12. The Biological Responses to Magnesium-Based Biodegradable Medical Devices

    Directory of Open Access Journals (Sweden)

    Lumei Liu

    2017-11-01

    Full Text Available The biocompatibility of Magnesium-based materials (MBMs is critical to the safety of biodegradable medical devices. As a promising metallic biomaterial for medical devices, the issue of greatest concern is devices’ safety as degrading products are possibly interacting with local tissue during complete degradation. The aim of this review is to summarize the biological responses to MBMs at the cellular/molecular level, including cell adhesion, transportation signaling, immune response, and tissue growth during the complex degradation process. We review the influence of MBMs on gene/protein biosynthesis and expression at the site of implantation, as well as throughout the body. This paper provides a systematic review of the cellular/molecular behavior of local tissue on the response to Mg degradation, which may facilitate a better prediction of long-term degradation and the safe use of magnesium-based implants through metal innovation.

  13. EFFICIENT POLYMER PHOTOVOLTAIC DEVICES BASED ON POLYMER D-A BLENDS

    Institute of Scientific and Technical Information of China (English)

    Xian-yu Deng; Li-ping Zheng; Yue-qi Mo; Gang Yu; Wei Yang; Wen-hua Weng; Yong Cao

    2001-01-01

    Recent work demonstrated that efficient solar-energy conversion could be achieved in polymer photovoltaic cells (PVCs) based on interpenetrating bi-continuous networks[1,2]. In this paper we present a comprehensive study on improving energy conversion efficiencies of PVCs based on composite films of MEHPPV and fullerene derivatives. Carrier collection efficiency of ca. 30% el/ph and energy conversion efficiency of 3.9% were achieved at 500 nm. At reverse bias of 15 V, the photosensitivity reached 0.8 A/W, corresponding to a quantum efficiency over 100% el/ph. These results suggest that high efficiency photoelectric conversion can be achieved in polymer devices with M-P-M structure. These devices are promising for practical applications such as plastic solar cells and plastic photodetectors.

  14. Bottom-up realization and electrical characterization of a graphene-based device

    International Nuclear Information System (INIS)

    Maffucci, A; Micciulla, F; Cataldo, A; Bellucci, S; Miano, G

    2016-01-01

    We propose a bottom-up procedure to fabricate an easy-to-engineer graphene-based device, consisting of a microstrip-like circuit where few-layer graphene nanoplatelets are used to contact two copper electrodes. The graphene nanoplatelets are obtained by the microwave irradiation of intercalated graphite, i.e., an environmentally friendly, fast and low-cost procedure. The contact is created by a bottom-up process, driven by the application of a DC electrical field in the gap between the electrodes, yielding the formation of a graphene carpet. The electrical resistance of the device has been measured as a function of the gap length and device temperature. The possible use of this device as a gas sensor is demonstrated by measuring the sensitivity of its electrical resistance to the presence of gas. The measured results demonstrate a good degree of reproducibility in the fabrication process, and the competitive performance of devices, thus making the proposed technique potentially attractive for industrial applications. (paper)

  15. Light programmable organic transistor memory device based on hybrid dielectric

    Science.gov (United States)

    Ren, Xiaochen; Chan, Paddy K. L.

    2013-09-01

    We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

  16. Creation of Single Chain of Nanoscale Skyrmion Bubbles with Record-high Temperature Stability in a Geometrically Confined Nanostripe

    KAUST Repository

    Hou, Zhipeng; Zhang, Qiang; Xu, Guizhou; Gong, Chen; Ding, Bei; Wang, Yue; Li, Hang; Liu, Enke; Xu, Feng; Zhang, Hongwei; Yao, Yuan; Wu, Guangheng; Zhang, Xixiang; Wang, Wenhong

    2018-01-01

    Nanoscale topologically nontrivial spin textures, such as magnetic skyrmions, have been identified as promising candidates for the transport and storage of information for spintronic applications, notably magnetic racetrack memory devices. The design and realization of a single skyrmion chain at room temperature (RT) and above in the low-dimensional nanostructures are of great importance for future practical applications. Here, we report the creation of a single skyrmion bubble chain in a geometrically confined Fe3Sn2 nanostripe with a width comparable to the featured size of a skyrmion bubble. Systematic investigations on the thermal stability have revealed that the single chain of skyrmion bubbles can keep stable at temperatures varying from RT up to a record-high temperature of 630 K. This extreme stability can be ascribed to the weak temperature-dependent magnetic anisotropy and the formation of edge states at the boundaries of the nanostripes. The realization of the highly stable skyrmion bubble chain in a geometrically confined nanostructure is a very important step toward the application of skyrmion-based spintronic devices.

  17. Creation of Single Chain of Nanoscale Skyrmion Bubbles with Record-high Temperature Stability in a Geometrically Confined Nanostripe

    KAUST Repository

    Hou, Zhipeng

    2018-01-04

    Nanoscale topologically nontrivial spin textures, such as magnetic skyrmions, have been identified as promising candidates for the transport and storage of information for spintronic applications, notably magnetic racetrack memory devices. The design and realization of a single skyrmion chain at room temperature (RT) and above in the low-dimensional nanostructures are of great importance for future practical applications. Here, we report the creation of a single skyrmion bubble chain in a geometrically confined Fe3Sn2 nanostripe with a width comparable to the featured size of a skyrmion bubble. Systematic investigations on the thermal stability have revealed that the single chain of skyrmion bubbles can keep stable at temperatures varying from RT up to a record-high temperature of 630 K. This extreme stability can be ascribed to the weak temperature-dependent magnetic anisotropy and the formation of edge states at the boundaries of the nanostripes. The realization of the highly stable skyrmion bubble chain in a geometrically confined nanostructure is a very important step toward the application of skyrmion-based spintronic devices.

  18. In plane optical sensor based on organic electronic devices

    NARCIS (Netherlands)

    Koetse, M.M; Rensing, P.A.; Heck, G.T. van; Sharpe, R.B.A.; Allard, B.A.M.; Wieringa, F.P.; Kruijt, P.G.M.; Meulendijks, N.M.M.; Jansen, H.; Schoo, H.F.M.

    2008-01-01

    Sensors based on organic electronic devices are emerging in a wide range of application areas. Here we present a sensor platform using organic light emitting diodes (OLED) and organic photodiodes (OPD) as active components. By means of lamination and interconnection technology the functional foils

  19. A Middleware Based Approach to Dynamically Deploy Location Based Services onto Heterogeneous Mobile Devices Using Bluetooth in Indoor Environment

    Science.gov (United States)

    Sadhukhan, Pampa; Sen, Rijurekha; Das, Pradip K.

    Several methods for providing location based service (LBS) to mobile devices in indoor environment using wireless technologies like WLAN, RFID and Bluetooth have been proposed, implemented and evaluated. However, most of them do not focus on heterogeneity of mobile platforms, memory constraint of mobile devices, the adaptability of client or device to the new services it discovers whenever it reaches a new location. In this paper, we have proposed a Middleware based approach of LBS provision in the indoor environment, where a Bluetooth enabled Base Station (BS) detects Bluetooth enabled mobile devices and pushes a proper client application only to those devices that belong to some registered subscriber of LBS. This dynamic deployment enables the mobile clients to access any new service without having preinstalled interface to that service beforehand and thus the client's memory consumption is reduced. Our proposed work also addresses the other issues like authenticating the clients before providing them LBSs and introducing paid services. We have evaluated its performance in term of file transfer time with respect to file size and throughput with respect to distance. Experimental results on service consumption time by the mobile client for different services are also presented.

  20. Perpendicular magnetic tunnel junction with a strained Mn-based nanolayer

    Science.gov (United States)

    Suzuki, K. Z.; Ranjbar, R.; Okabayashi, J.; Miura, Y.; Sugihara, A.; Tsuchiura, H.; Mizukami, S.

    2016-07-01

    A magnetic tunnel junction with a perpendicular magnetic easy-axis (p-MTJ) is a key device for spintronic non-volatile magnetoresistive random access memory (MRAM). Co-Fe-B alloy-based p-MTJs are being developed, although they have a large magnetisation and medium perpendicular magnetic anisotropy (PMA), which make it difficult to apply them to a future dense MRAM. Here, we demonstrate a p-MTJ with an epitaxially strained MnGa nanolayer grown on a unique CoGa buffer material, which exhibits a large PMA of more than 5 Merg/cm3 and magnetisation below 500 emu/cm3 these properties are sufficient for application to advanced MRAM. Although the experimental tunnel magnetoresistance (TMR) ratio is still low, first principles calculations confirm that the strain-induced crystal lattice distortion modifies the band dispersion along the tetragonal c-axis into the fully spin-polarised state; thus, a huge TMR effect can be generated in this p-MTJ.

  1. Magnetic fingerprint of individual Fe4 molecular magnets under compression by a scanning tunnelling microscope

    Science.gov (United States)

    Burgess, Jacob A. J.; Malavolti, Luigi; Lanzilotto, Valeria; Mannini, Matteo; Yan, Shichao; Ninova, Silviya; Totti, Federico; Rolf-Pissarczyk, Steffen; Cornia, Andrea; Sessoli, Roberta; Loth, Sebastian

    2015-09-01

    Single-molecule magnets (SMMs) present a promising avenue to develop spintronic technologies. Addressing individual molecules with electrical leads in SMM-based spintronic devices remains a ubiquitous challenge: interactions with metallic electrodes can drastically modify the SMM's properties by charge transfer or through changes in the molecular structure. Here, we probe electrical transport through individual Fe4 SMMs using a scanning tunnelling microscope at 0.5 K. Correlation of topographic and spectroscopic information permits identification of the spin excitation fingerprint of intact Fe4 molecules. Building from this, we find that the exchange coupling strength within the molecule's magnetic core is significantly enhanced. First-principles calculations support the conclusion that this is the result of confinement of the molecule in the two-contact junction formed by the microscope tip and the sample surface.

  2. Switching dynamics of TaOx-based threshold switching devices

    Science.gov (United States)

    Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

    2018-03-01

    Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

  3. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Jarillo-Herrero, Pablo [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

    2017-02-07

    This is the final report of our research program on electronic transport experiments on Topological Insulator (TI) devices, funded by the DOE Office of Basic Energy Sciences. TI-based electronic devices are attractive as platforms for spintronic applications, and for detection of emergent properties such as Majorana excitations , electron-hole condensates , and the topological magneto-electric effect . Most theoretical proposals envision geometries consisting of a planar TI device integrated with materials of distinctly different physical phases (such as ferromagnets and superconductors). Experimental realization of physics tied to the surface states is a challenge due to the ubiquitous presence of bulk carriers in most TI compounds as well as degradation during device fabrication.

  4. Protecting computer-based medical devices: defending against viruses and other threats.

    Science.gov (United States)

    2005-07-01

    The increasing integration of computer hardware has exposed medical devices to greater risks than ever before. More and more devices rely on commercial off-the-shelf software and operating systems, which are vulnerable to the increasing proliferation of viruses and other malicious programs that target computers. Therefore, it is necessary for hospitals to take steps such as those outlined in this article to ensure that their computer-based devices are made safe and continue to remain safe in the future. Maintaining the security of medical devices requires planning, careful execution, and a commitment of resources. A team should be created to develop a process for surveying the security status of all computerized devices in the hospital and making sure that patches and other updates are applied as needed. These patches and updates should be approved by the medical system supplier before being implemented. The team should consider using virtual local area networks to isolate susceptible devices on the hospital's network. All security measures should be carefully documented, and the documentation should be kept up-to-date. Above all, care must be taken to ensure that medical device security involves a collaborative, supportive partnership between the hospital's information technology staff and biomedical engineering personnel.

  5. ELOPTA: a novel microcontroller-based operant device.

    Science.gov (United States)

    Hoffman, Adam M; Song, Jianjian; Tuttle, Elaina M

    2007-11-01

    Operant devices have been used for many years in animal behavior research, yet such devices a regenerally highly specialized and quite expensive. Although commercial models are somewhat adaptable and resilient, they are also extremely expensive and are controlled by difficult to learn proprietary software. As an alternative to commercial devices, we have designed and produced a fully functional, programmable operant device, using a PICmicro microcontroller (Microchip Technology, Inc.). The electronic operant testing apparatus (ELOPTA) is designed to deliver food when a study animal, in this case a bird, successfully depresses the correct sequence of illuminated keys. The device logs each keypress and can detect and log whenever a test animal i spositioned at the device. Data can be easily transferred to a computer and imported into any statistical analysis software. At about 3% the cost of a commercial device, ELOPTA will advance behavioral sciences, including behavioral ecology, animal learning and cognition, and ethology.

  6. Conducting polymer based biomolecular electronic devices

    Indian Academy of Sciences (India)

    Conducting polymers; LB films; biosensor microactuators; monolayers. ... have been projected for applications for a wide range of biomolecular electronic devices such as optical, electronic, drug-delivery, memory and biosensing devices.

  7. Novel and facile viscometer using a paper-based microfluidic device

    Science.gov (United States)

    Kang, Hyunwoong; Jang, Ilhoon; Song, Simon

    2017-11-01

    In clinical applications, it is important to rapidly estimate the blood viscosity of a patient with a high accuracy and a small sample consumption. Unfortunately, ordinary mechanical viscometers require long analysis time, large volume of sample and skilled person. To address this issue, silicon-based viscometers have been developed, but they are still far from prevail usage in clinical environments due to complexity in process and analysis. Recently, a paper-based microfluidic device is emerged as a new platform for a facile point-of-care diagnostic device due to low cost, disposability and ease of use. Thus, we propose a novel and facile method of measuring a viscosity with a paper-based microfluidic devices and a smartphone. This viscometer utilizes mixing characteristics of two fluid flows in a T-shape channel: one for reference and the other for test fluid. The mixing strongly depends on viscosity difference between the two fluids. Also, the fluids are dyed for colorimetric analysis with a smartphone. We found that the accuracy of viscometer is about 3 percent when it was tested for various glycerin aqueous solutions. More detailed information will be discussed in the presentation. This work was supported by the National Research Foundation of Korea(NRF) Grant funded by the Korea government(MSIP) (No. 2016R1A2B3009541).

  8. Characterizing Graphene-modified Electrodes for Interfacing with Arduino®-based Devices.

    Science.gov (United States)

    Arris, Farrah Aida; Ithnin, Mohamad Hafiz; Salim, Wan Wardatul Amani Wan

    2016-08-01

    Portable low-cost platform and sensing systems for identification and quantitative measurement are in high demand for various environmental monitoring applications, especially in field work. Quantifying parameters in the field requires both minimal sample handling and a device capable of performing measurements with high sensitivity and stability. Furthermore, the one-device-fits-all concept is useful for continuous monitoring of multiple parameters. Miniaturization of devices can be achieved by introducing graphene as part of the transducer in an electrochemical sensor. In this project, we characterize graphene deposition methods on glassy-carbon electrodes (GCEs) with the goal of interfacing with an Arduino-based user-friendly microcontroller. We found that a galvanostatic electrochemical method yields the highest peak current of 10 mA, promising a highly sensitive electrochemical sensor. An Atlas Scientific™ printed circuit board (PCB) was connected to an Arduino® microcontroller using a multi-circuit connection that can be interfaced with graphene-based electrochemical sensors for environmental monitoring.

  9. MindEdit: A P300-based text editor for mobile devices.

    Science.gov (United States)

    Elsawy, Amr S; Eldawlatly, Seif; Taher, Mohamed; Aly, Gamal M

    2017-01-01

    Practical application of Brain-Computer Interfaces (BCIs) requires that the whole BCI system be portable. The mobility of BCI systems involves two aspects: making the electroencephalography (EEG) recording devices portable, and developing software applications with low computational complexity to be able to run on low computational-power devices such as tablets and smartphones. This paper addresses the development of MindEdit; a P300-based text editor for Android-based devices. Given the limited resources of mobile devices and their limited computational power, a novel ensemble classifier is utilized that uses Principal Component Analysis (PCA) features to identify P300 evoked potentials from EEG recordings. PCA computations in the proposed method are channel-based as opposed to concatenating all channels as in traditional feature extraction methods; thus, this method has less computational complexity compared to traditional P300 detection methods. The performance of the method is demonstrated on data recorded from MindEdit on an Android tablet using the Emotiv wireless neuroheadset. Results demonstrate the capability of the introduced PCA ensemble classifier to classify P300 data with maximum average accuracy of 78.37±16.09% for cross-validation data and 77.5±19.69% for online test data using only 10 trials per symbol and a 33-character training dataset. Our analysis indicates that the introduced method outperforms traditional feature extraction methods. For a faster operation of MindEdit, a variable number of trials scheme is introduced that resulted in an online average accuracy of 64.17±19.6% and a maximum bitrate of 6.25bit/min. These results demonstrate the efficacy of using the developed BCI application with mobile devices. Copyright © 2016 Elsevier Ltd. All rights reserved.

  10. MEMS- and NEMS-based smart devices and systems

    Science.gov (United States)

    Varadan, Vijay K.

    2001-11-01

    structures and food and medical industries. This unique combination of technologies also results in novel conformal sensors that can be remotely sensed by an antenna system with the advantage of no power requirements at the sensor site. This paper provides a brief review of MEMS and NEMS based smart systems for various applications mentioned above. Carbon Nano Tubes (CNT) with their unique structure, have already proven to be valuable in their application as tips for scanning probe microscopy, field emission devices, nanoelectronics, H2-storage, electromagnetic absorbers, ESD, EMI films and coatings and structural composites. For many of these applications, highly purified and functionalized CNT which are compatible with many host polymers are needed. A novel microwave CVD processing technique to meet these requirements has been developed at Penn State Center for the engineering of Electronic and Acoustic Materials and Devices (CEEAMD). This method enables the production of highly purified carbon nano tubes with variable size (from 5-40 nm) at low cost (per gram) and high yield. Whereas, carbon nano tubes synthesized using the laser ablation or arc discharge evaporation method always include impurity due to catalyst or catalyst support. The Penn State research is based on the use of zeolites over other metal/metal oxides in the microwave field for a high production and uniformity of the product. An extended conventional purification method has been employed to purify our products in order to remove left over impurity. A novel composite structure can be tailored by functionalizing carbon nano tubes and chemically bonding them with the polymer matrix e.g. block or graft copolymer, or even cross- linked copolymer, to impart exceptional structural, electronic and surface properties. Bio- and Mechanical-MEMS devices derived from this hybrid composites will be presented.

  11. Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

    KAUST Repository

    Tsai, Yu-Lin

    2016-09-06

    Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

  12. A controllable spin prism

    International Nuclear Information System (INIS)

    Hakioglu, T

    2009-01-01

    Based on Khodas et al (2004 Phys. Rev. Lett. 92 086602), we propose a device acting like a controllable prism for an incident spin. The device is a large quantum well where Rashba and Dresselhaus spin-orbit interactions are present and controlled by the plunger gate potential, the electric field and the barrier height. A totally destructive interference can be manipulated externally between the Rashba and Dresselhaus couplings. The spin-dependent transmission/reflection amplitudes are calculated as the control parameters are changed. The device operates as a spin prism/converter/filter in different regimes and may stimulate research in promising directions in spintronics in analogy with linear optics.

  13. Nanoparticle/nanotube-based nanoelectronic devices and chemically-directed assembly thereof

    Science.gov (United States)

    Schmidt, Howard K [Cypress, TX

    2011-02-22

    According to some embodiments, the present invention provides a nanoelectronic device based on a nanostructure that may include a nanotube with first and second ends, a metallic nanoparticle attached to the first end, and an insulating nanoparticle attached to the second end. The nanoelectronic device may include additional nanostructures so a to form a plurality of nanostructures comprising the first nanostructure and the additional nanostructures. The plurality of nanostructures may arranged in a network comprising a plurality of edges and a plurality of vertices, wherein each edge comprises a nanotube and each vertex comprises at least one insulating nanoparticle and at least one metallic nanoparticle adjacent the insulating nanoparticle. The combination of at least one edge and at least one vertex comprises a diode. The device may be an optical rectenna.

  14. Micromagnetic study of skyrmion stability in confined magnetic structures with perpendicular anisotropy

    Science.gov (United States)

    Novak, R. L.; Garcia, F.; Novais, E. R. P.; Sinnecker, J. P.; Guimarães, A. P.

    2018-04-01

    Skyrmions are emerging topological spin structures that are potentially revolutionary for future data storage and spintronics applications. The existence and stability of skyrmions in magnetic materials is usually associated to the presence of the Dzyaloshinskii-Moriya interaction (DMI) in bulk magnets or in magnetic thin films lacking inversion symmetry. While some methods have already been proposed to generate isolated skyrmions in thin films with DMI, a thorough study of the conditions under which the skyrmions will remain stable in order to be manipulated in an integrated spintronic device are still an open problem. The stability of such structures is believed to be a result of ideal combinations of perpendicular magnetic anisotropy (PMA), DMI and the interplay between geometry and magnetostatics. In the present work we show some micromagnetic results supporting previous experimental observations of magnetic skyrmions in spin-valve stacks with a wide range of DMI values. Using micromagnetic simulations of cobalt-based disks, we obtain the magnetic ground state configuration for several values of PMA, DMI and geometric parameters. Skyrmion numbers, corresponding to the topological charge, are calculated in all cases and confirm the occurrence of isolated, stable, axially symmetric skyrmions for several combinations of DMI and anisotropy constant. The stability of the skyrmions in disks is then investigated under magnetic field and spin-polarized current, in finite temperature, highlighting the limits of applicability of these spin textures in spintronic devices.

  15. A light-stimulated synaptic device based on graphene hybrid phototransistor

    Science.gov (United States)

    Qin, Shuchao; Wang, Fengqiu; Liu, Yujie; Wan, Qing; Wang, Xinran; Xu, Yongbing; Shi, Yi; Wang, Xiaomu; Zhang, Rong

    2017-09-01

    Neuromorphic chips refer to an unconventional computing architecture that is modelled on biological brains. They are increasingly employed for processing sensory data for machine vision, context cognition, and decision making. Despite rapid advances, neuromorphic computing has remained largely an electronic technology, making it a challenge to access the superior computing features provided by photons, or to directly process vision data that has increasing importance to artificial intelligence. Here we report a novel light-stimulated synaptic device based on a graphene-carbon nanotube hybrid phototransistor. Significantly, the device can respond to optical stimuli in a highly neuron-like fashion and exhibits flexible tuning of both short- and long-term plasticity. These features combined with the spatiotemporal processability make our device a capable counterpart to today’s electrically-driven artificial synapses, with superior reconfigurable capabilities. In addition, our device allows for generic optical spike processing, which provides a foundation for more sophisticated computing. The silicon-compatible, multifunctional photosensitive synapse opens up a new opportunity for neural networks enabled by photonics and extends current neuromorphic systems in terms of system complexities and functionalities.

  16. Lightweight carbon nanotube-based structural-energy storage devices for micro unmanned systems

    Science.gov (United States)

    Rivera, Monica; Cole, Daniel P.; Hahm, Myung Gwan; Reddy, Arava L. M.; Vajtai, Robert; Ajayan, Pulickel M.; Karna, Shashi P.; Bundy, Mark L.

    2012-06-01

    There is a strong need for small, lightweight energy storage devices that can satisfy the ever increasing power and energy demands of micro unmanned systems. Currently, most commercial and developmental micro unmanned systems utilize commercial-off-the-shelf (COTS) lithium polymer batteries for their energy storage needs. While COTS lithium polymer batteries are the industry norm, the weight of these batteries can account for up to 60% of the overall system mass and the capacity of these batteries can limit mission durations to the order of only a few minutes. One method to increase vehicle endurance without adding mass or sacrificing payload capabilities is to incorporate multiple system functions into a single material or structure. For example, the body or chassis of a micro vehicle could be replaced with a multifunctional material that would serve as both the vehicle structure and the on-board energy storage device. In this paper we present recent progress towards the development of carbon nanotube (CNT)-based structural-energy storage devices for micro unmanned systems. Randomly oriented and vertically aligned CNT-polymer composite electrodes with varying degrees of flexibility are used as the primary building blocks for lightweight structural-supercapacitors. For the purpose of this study, the mechanical properties of the CNT-based electrodes and the charge-discharge behavior of the supercapacitor devices are examined. Because incorporating multifunctionality into a single component often degrades the properties or performance of individual structures, the performance and property tradeoffs of the CNT-based structural-energy storage devices will also be discussed.

  17. Silicon based nanogap device for investigating electronic transport through 12 nm long oligomers

    DEFF Research Database (Denmark)

    Strobel, S.; Albert, E.; Csaba, G.

    2009-01-01

    We have fabricated vertical nanogap electrode devices based on Silicon-on-Insulator (SOI) substrates for investigating the electronic transport properties of long, conjugated molecular wires. Our nanogap electrode devices comprise smooth metallic contact pairs situated at the sidewall of an SOI s...

  18. Humidity effects on the electronic transport properties in carbon based nanoscale device

    International Nuclear Information System (INIS)

    He, Jun; Chen, Ke-Qiu

    2012-01-01

    By applying nonequilibrium Green's functions in combination with the density functional theory, we investigate the effect of humidity on the electronic transport properties in carbon based nanoscale device. The results show that different humidity may form varied localized potential barrier, which is a very important factor to affect the stability of electronic transport in the nanoscale system. A mechanism for the humidity effect is suggested. -- Highlights: ► Electronic transport in carbon based nanoscale device. ► Humidity affects the stability of electronic transport. ► Different humidity may form varied localized potential barrier.

  19. Role of Ni2+(d8) ions in electrical, optical and magnetic properties of CdS nanowires for optoelectronic and spintronic applications

    Science.gov (United States)

    Arshad Kamran, Muhammad

    2018-06-01

    For the first time, 1D Ni ion doped CdS nanowires (NWs) were synthesized via chemical vapour deposition (CVD). The synthesized Cd0.886Ni0.114S NWs were single crystalline. We have reported here the investigation of optical, electrical and magnetic properties of prepared NWs for optoelectronic and spintronic applications. Successful incorporation of Ni ions in an individual CdS NW has been confirmed through several characterization tools: significantly higher angle and phonon mode shift were observed in the XRD and Raman spectra. SEM-EDX and XPS analysis also confirmed the presence of Ni2+ ions. Room temperature photoluminescence (RT-PL) showed multiple peaks: two emission peaks in the visible region centered at 517.1 nm (green), 579.2 nm (orange), and a broad-band near infra-red (NIR) emission centered at 759.9 nm. The first peak showed 5 nm red shift upon Ni2+ doping, hinting at the formation of exciton magnetic polarons (EMPs), and broad NIR emission was observed in both chlorides and bromides, which was assigned to d‑d transition of Ni ions whose energy levels lying at 749.51 nm (13 342 cm–1) and 750.98 nm (13 316 cm–1) are very close to NIR emission. Orange emission not only remained at same peak position—its PL intensity was also significantly enhanced at 78 K; this was assigned to d‑d transition (3A2g → 1Eg) of Ni2+ ions. It was observed that 11.4% Ni2+ ion doping enhanced the conductivity of our sample around 20 times, and saturation magnetization (Ms) increased from 7.2 × 10‑5 Am2/Kg to 1.17 × 10‑4 Am2/Kg, which shows promise for optoelectronic and spintronic applications.

  20. Efficient light-emitting devices based on platinum-complexes-anchored polyhedral oligomeric silsesquioxane materials

    KAUST Repository

    Yang, Xiaohui

    2010-08-24

    The synthesis, photophysical, and electrochemical characterization of macromolecules, consisting of an emissive platinum complex and carbazole moieties covalently attached to a polyhedral oligomeric silsesquioxane (POSS) core, is reported. Organic light-emitting devices based on these POSS materials exhibit a peak external quantum efficiency of ca. 8%, which is significantly higher than that of the analogous devices with a physical blend of the platinum complexes and a polymer matrix, and they represent noticeable improvement in the device efficiency of solution-processable phosphorescent excimer devices. Furthermore, the ratio of monomer and excimer/aggregate electroluminescent emission intensity, as well as the device efficiency, increases as the platinum complex moiety presence on the POSS macromolecules decreases. © 2010 American Chemical Society.

  1. k-Space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures

    OpenAIRE

    Lev, L. L.; Maiboroda, I. O.; Husanu, M. -A.; Grichuk, E. S.; Chumakov, N. K.; Ezubchenko, I. S.; Chernykh, I. A.; Wang, X.; Tobler, B.; Schmitt, T.; Zanaveskin, M. L.; Valeyev, V. G.; Strocov, V. N.

    2018-01-01

    Nanostructures based on buried interfaces and heterostructures are at the heart of modern semiconductor electronics as well as future devices utilizing spintronics, multiferroics, topological effects and other novel operational principles. Knowledge of electronic structure of these systems resolved in electron momentum k delivers unprecedented insights into their physics. Here, we explore 2D electron gas formed in GaN/AlGaN high-electron-mobility transistor (HEMT) heterostructures with an ult...

  2. TUTORIAL: Focused-ion-beam-based rapid prototyping of nanoscale magnetic devices

    Science.gov (United States)

    Khizroev, S.; Litvinov, D.

    2004-03-01

    In this tutorial, focused-ion-beam (FIB)-based fabrication is considered from a very unconventional angle. FIB is considered not as a fabrication tool that can be used for mass production of electronic devices, similar to optical and E-beam—based lithography, but rather as a powerful tool to rapidly fabricate individual nanoscale magnetic devices for prototyping future electronic applications. Among the effects of FIB-based fabrication of magnetic devices, the influence of Ga+-ion implantation on magnetic properties is presented. With help of magnetic force microscopy (MFM), it is shown that there is a critical doze of ions that a magnetic material can be exposed to without experiencing a change in the magnetic properties. Exploiting FIB from such an unconventional perspective is especially favourable today when the future of so many novel technologies depends on the ability to rapidly fabricate prototype nanoscale magnetic devices. As one of the most illustrative examples, the multi-billion-dollar data storage industry is analysed as the technology field that strongly benefited from implementing FIB in the above-described role. The essential role of FIB in the most recent trend of the industry towards perpendicular magnetic recording is presented. Moreover, other emerging and fast-growing technologies are considered as examples of nanoscale technologies whose future could strongly depend on the implementation of FIB in the role of a nanoscale fabrication tool for rapid prototyping. Among the other described technologies are 'ballistic' magnetoresistance, patterned magnetic media, magnetoresistive RAM (MRAM), and magnetic force microscopy.

  3. Ab initio assisted process modeling for Si-based nanoelectronic devices

    International Nuclear Information System (INIS)

    Windl, Wolfgang

    2005-01-01

    In this paper, we discuss concepts and examples of ab initio calculations assisting physics-based process simulation. We focus on how to determine diffusion and reaction constants, where modern methods such as the nudged elastic band method allow a systematic and reliable search for the minimum energy migration path and barrier. We show that once the saddle point is determined, the underlying harmonic transition state theory also allows to calculate the prefactors. The discussed examples include nitrogen diffusion, boron deactivation and boron interface segregation. Finally, some concepts are discussed for future device technologies such as molecular devices, where the currently prevalent multiscale approach (kinetic parameters used in higher level models like diffusion-reaction or kinetic Monte Carlo modeling) would not be sensible anymore. As an example, we described the ab initio temperature-accelerated dynamics modeling of contact formation in carbon nanotube devices

  4. Electrochromics for smart windows: Oxide-based thin films and devices

    Energy Technology Data Exchange (ETDEWEB)

    Granqvist, Claes G.

    2014-08-01

    Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

  5. Electrochromics for smart windows: Oxide-based thin films and devices

    International Nuclear Information System (INIS)

    Granqvist, Claes G.

    2014-01-01

    Electrochromic (EC) smart windows are able to vary their throughput of visible light and solar energy by the application of an electrical voltage and are able to provide energy efficiency and indoor comfort in buildings. Section 1 explains why this technology is important and timely by first outlining today's precarious situation concerning increasing energy use and associated effects on the world's climate, and this section also underscores the great importance of enhancing the energy efficiency of buildings by letting them function more in harmony with the environment—particularly its varying temperature—than is possible with current mainstream technologies. This same chapter also surveys recent work on the energy savings and other benefits that are possible with EC-based technologies. Section 2 then provides some notes on the history of the EC effect and its applications. Section 3 presents a generic design for the oxide-based EC devices that are most in focus for present-day applications and research. This design includes five superimposed layers with a centrally-positioned electrolyte connecting two oxide films—at least one of which having EC properties—and with transparent electrical conductors surrounding the three-layer structure in the middle. It is emphasized that this construction can be viewed as a thin-film electrical battery whose charging state is manifested as optical absorption. Also discussed are six well known hurdles for the implementation of these EC devices, as well as a number of practical constructions of EC-based smart windows. Section 4 is an in-depth discussion of various aspects of EC oxides. It begins with a literature survey for 2007–2013, which updates earlier reviews, and is followed by a general discussion of optical and electronic effects and, specifically, on charge transfer absorption in tungsten oxide. Ionic effects are then treated with foci on the inherent nanoporosity of the important EC oxides and on the

  6. Gaming control using a wearable and wireless EEG-based brain-computer interface device with novel dry foam-based sensors

    Science.gov (United States)

    2012-01-01

    A brain-computer interface (BCI) is a communication system that can help users interact with the outside environment by translating brain signals into machine commands. The use of electroencephalographic (EEG) signals has become the most common approach for a BCI because of their usability and strong reliability. Many EEG-based BCI devices have been developed with traditional wet- or micro-electro-mechanical-system (MEMS)-type EEG sensors. However, those traditional sensors have uncomfortable disadvantage and require conductive gel and skin preparation on the part of the user. Therefore, acquiring the EEG signals in a comfortable and convenient manner is an important factor that should be incorporated into a novel BCI device. In the present study, a wearable, wireless and portable EEG-based BCI device with dry foam-based EEG sensors was developed and was demonstrated using a gaming control application. The dry EEG sensors operated without conductive gel; however, they were able to provide good conductivity and were able to acquire EEG signals effectively by adapting to irregular skin surfaces and by maintaining proper skin-sensor impedance on the forehead site. We have also demonstrated a real-time cognitive stage detection application of gaming control using the proposed portable device. The results of the present study indicate that using this portable EEG-based BCI device to conveniently and effectively control the outside world provides an approach for researching rehabilitation engineering. PMID:22284235

  7. Toward biomaterial-based implantable photonic devices

    Directory of Open Access Journals (Sweden)

    Humar Matjaž

    2017-03-01

    Full Text Available Optical technologies are essential for the rapid and efficient delivery of health care to patients. Efforts have begun to implement these technologies in miniature devices that are implantable in patients for continuous or chronic uses. In this review, we discuss guidelines for biomaterials suitable for use in vivo. Basic optical functions such as focusing, reflection, and diffraction have been realized with biopolymers. Biocompatible optical fibers can deliver sensing or therapeutic-inducing light into tissues and enable optical communications with implanted photonic devices. Wirelessly powered, light-emitting diodes (LEDs and miniature lasers made of biocompatible materials may offer new approaches in optical sensing and therapy. Advances in biotechnologies, such as optogenetics, enable more sophisticated photonic devices with a high level of integration with neurological or physiological circuits. With further innovations and translational development, implantable photonic devices offer a pathway to improve health monitoring, diagnostics, and light-activated therapies.

  8. Team-Based Development of Medical Devices: An Engineering–Business Collaborative

    Science.gov (United States)

    Eberhardt, Alan W.; Johnson, Ophelia L.; Kirkland, William B.; Dobbs, Joel H.; Moradi, Lee G.

    2016-01-01

    There is a global shift in the teaching methodology of science and engineering toward multidisciplinary, team-based processes. To meet the demands of an evolving technical industry and lead the way in engineering education, innovative curricula are essential. This paper describes the development of multidisciplinary, team-based learning environments in undergraduate and graduate engineering curricula focused on medical device design. In these programs, students actively collaborate with clinicians, professional engineers, business professionals, and their peers to develop innovative solutions to real-world problems. In the undergraduate senior capstone courses, teams of biomedical engineering (BME) and business students have produced and delivered numerous functional prototypes to satisfied clients. Pursuit of commercialization of devices has led to intellectual property (IP) disclosures and patents. Assessments have indicated high levels of success in attainment of student learning outcomes and student satisfaction with their undergraduate design experience. To advance these projects toward commercialization and further promote innovative team-based learning, a Master of Engineering (MEng) in Design and Commercialization was recently launched. The MEng facilitates teams of graduate students in engineering, life sciences, and business who engage in innovation-commercialization (IC) projects and coursework that take innovative ideas through research and development (R&D) to create marketable devices. The activities are structured with students working together as a “virtual company,” with targeted outcomes of commercialization (license agreements and new start-ups), competitive job placement, and/or career advancement. PMID:26902869

  9. Team-Based Development of Medical Devices: An Engineering-Business Collaborative.

    Science.gov (United States)

    Eberhardt, Alan W; Johnson, Ophelia L; Kirkland, William B; Dobbs, Joel H; Moradi, Lee G

    2016-07-01

    There is a global shift in the teaching methodology of science and engineering toward multidisciplinary, team-based processes. To meet the demands of an evolving technical industry and lead the way in engineering education, innovative curricula are essential. This paper describes the development of multidisciplinary, team-based learning environments in undergraduate and graduate engineering curricula focused on medical device design. In these programs, students actively collaborate with clinicians, professional engineers, business professionals, and their peers to develop innovative solutions to real-world problems. In the undergraduate senior capstone courses, teams of biomedical engineering (BME) and business students have produced and delivered numerous functional prototypes to satisfied clients. Pursuit of commercialization of devices has led to intellectual property (IP) disclosures and patents. Assessments have indicated high levels of success in attainment of student learning outcomes and student satisfaction with their undergraduate design experience. To advance these projects toward commercialization and further promote innovative team-based learning, a Master of Engineering (MEng) in Design and Commercialization was recently launched. The MEng facilitates teams of graduate students in engineering, life sciences, and business who engage in innovation-commercialization (IC) projects and coursework that take innovative ideas through research and development (R&D) to create marketable devices. The activities are structured with students working together as a "virtual company," with targeted outcomes of commercialization (license agreements and new start-ups), competitive job placement, and/or career advancement.

  10. Ontology-Driven Instant Messaging-Based Dialogue System for Device Control

    KAUST Repository

    Noguera-Arnaldos, José Á ngel; Rodriguez-Garcia, Miguel Angel; Ochoa, José Luis; Paredes-Valverde, Mario André s; Alcaraz-Má rmol, Gema; Valencia-Garcí a, Rafael

    2015-01-01

    The im4Things platform aims to develop a communication interface for devices in the Internet of the Things (IoT) through intelligent dialogue based on written natural language over instant messaging services. This type of communication can

  11. Transmission electron microscopy of InP-based compound semiconductor materials and devices

    International Nuclear Information System (INIS)

    Chu, S.N.G.

    1990-01-01

    InP/InGaAsP-based heteroepitaxial structures constitute the major optoelectronic devices for state-of-the-art long wavelength optical fiber communication system.s Future advanced device structures will require thin heteroepitaxial quantum wells and superlattices a few tens of angstrom or less in thickness, and lateral dimensions ranging from a few tens angstrom for quantum dots and wires to a few μm in width for buried heterostructure lasers. Due to the increasing complexity of the device structure required by band-gap engineering, the performance of these devices becomes susceptible to any lattice imperfections present in the structure. Transmission electron microscopy (TEM), therefore, becomes the most important technique in characterizing the structural integrity of these materials. Cross-section transmission electron microscopy (XTEM) not only provides the necessary geometric information on the device structure; a careful study of the materials science behind the observed lattice imperfections provides directions for optimization of both the epitaxial growth parameters and device processing conditions. Furthermore, for device reliability studies, TEM is the only technique that unambiguously identifies the cause of device degradation. In this paper, the authors discuss areas of application of various TEM techniques, describe the TEM sample preparation technique, and review case studies to demonstrate the power of the TEM technique

  12. Chemically modified graphene based supercapacitors for flexible and miniature devices

    Science.gov (United States)

    Ghosh, Debasis; Kim, Sang Ouk

    2015-09-01

    Rapid progress in the portable and flexible electronic devises has stimulated supercapacitor research towards the design and fabrication of high performance flexible devices. Recent research efforts for flexible supercapacitor electrode materials are highly focusing on graphene and chemically modified graphene owing to the unique properties, including large surface area, high electrical and thermal conductivity, excellent mechanical flexibility, and outstanding chemical stability. This invited review article highlights current status of the flexible electrode material research based on chemically modified graphene for supercapacitor application. A variety of electrode architectures prepared from chemically modified graphene are summarized in terms of their structural dimensions. Novel prototypes for the supercapacitor aiming at flexible miniature devices, i.e. microsupercapacitor with high energy and power density are highlighted. Future challenges relevant to graphene-based flexible supercapacitors are also suggested. [Figure not available: see fulltext.

  13. Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

    Directory of Open Access Journals (Sweden)

    B. Fang

    2015-06-01

    Full Text Available We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices.

  14. Thin film-based optically variable security devices: From passive to active

    Science.gov (United States)

    Baloukas, Bill

    Counterfeiting costs the world economy billions of dollars every year. Aside from financial losses, counterfeiting also poses a great threat to the public's safety, for example through the existence of counterfeit passports (terrorism), pharmaceutical products (health hazards) and even airplane parts (safety issues). Optical security devices (OSDs) have therefore played a critical role in the fight against counterfeiting. It is the aim of the present thesis to show that through the use of metamerism and electrochromic materials, new types of active security devices with interesting features can be created; indeed, most present-day devices are passive in nature. I first demonstrate that the addition of metamerism in the design of interference filters can result in innovative features. Different structures which can be used in transmission and/or in reflection are designed, fabricated, and evaluated. The first structures which are presented here are based on a combination of two different metameric interference filters. Possessing widely different transmission spectra, these filters also offer different angular color shifts and, as a result, offer an opportunity of creating hidden image effects. Despite their interesting properties, such metameric devices are shown to be highly illuminant and observer sensitive; that is the color match is lost under most observation conditions. These issues are solved by a simpler structure based on the juxtaposition of an interference filter and a non-iridescent colored material. Throughout this study, I present the design approach, analyze the filters' sensitivity to deposition errors, and evaluate the performance of prototype devices prepared by dual ion beam sputtering. Following my work on passive metameric systems, I then propose to go one step further by implementing an active component using an electrochromic material. This novel concept, which is based on the joint use of a metameric filter and electrochromic device, offers

  15. Increasing cell-device adherence using cultured insect cells for receptor-based biosensors

    Science.gov (United States)

    Terutsuki, Daigo; Mitsuno, Hidefumi; Sakurai, Takeshi; Okamoto, Yuki; Tixier-Mita, Agnès; Toshiyoshi, Hiroshi; Mita, Yoshio; Kanzaki, Ryohei

    2018-03-01

    Field-effect transistor (FET)-based biosensors have a wide range of applications, and a bio-FET odorant sensor, based on insect (Sf21) cells expressing insect odorant receptors (ORs) with sensitivity and selectivity, has emerged. To fully realize the practical application of bio-FET odorant sensors, knowledge of the cell-device interface for efficient signal transfer, and a reliable and low-cost measurement system using the commercial complementary metal-oxide semiconductor (CMOS) foundry process, will be indispensable. However, the interfaces between Sf21 cells and sensor devices are largely unknown, and electrode materials used in the commercial CMOS foundry process are generally limited to aluminium, which is reportedly toxic to cells. In this study, we investigated Sf21 cell-device interfaces by developing cross-sectional specimens. Calcium imaging of Sf21 cells expressing insect ORs was used to verify the functions of Sf21 cells as odorant sensor elements on the electrode materials. We found that the cell-device interface was approximately 10 nm wide on average, suggesting that the adhesion mechanism of Sf21 cells may differ from that of other cells. These results will help to construct accurate signal detection from expressed insect ORs using FETs.

  16. Conductivity based on selective etch for GaN devices and applications thereof

    Science.gov (United States)

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  17. Carbon-Based Materials for Lithium-Ion Batteries, Electrochemical Capacitors, and Their Hybrid Devices.

    Science.gov (United States)

    Yao, Fei; Pham, Duy Tho; Lee, Young Hee

    2015-07-20

    A rapidly developing market for portable electronic devices and hybrid electrical vehicles requires an urgent supply of mature energy-storage systems. As a result, lithium-ion batteries and electrochemical capacitors have lately attracted broad attention. Nevertheless, it is well known that both devices have their own drawbacks. With the fast development of nanoscience and nanotechnology, various structures and materials have been proposed to overcome the deficiencies of both devices to improve their electrochemical performance further. In this Review, electrochemical storage mechanisms based on carbon materials for both lithium-ion batteries and electrochemical capacitors are introduced. Non-faradic processes (electric double-layer capacitance) and faradic reactions (pseudocapacitance and intercalation) are generally explained. Electrochemical performance based on different types of electrolytes is briefly reviewed. Furthermore, impedance behavior based on Nyquist plots is discussed. We demonstrate the influence of cell conductivity, electrode/electrolyte interface, and ion diffusion on impedance performance. We illustrate that relaxation time, which is closely related to ion diffusion, can be extracted from Nyquist plots and compared between lithium-ion batteries and electrochemical capacitors. Finally, recent progress in the design of anodes for lithium-ion batteries, electrochemical capacitors, and their hybrid devices based on carbonaceous materials are reviewed. Challenges and future perspectives are further discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

    Science.gov (United States)

    Younis, Adnan; Chu, Dewei; Li, Sean

    2015-09-01

    Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

  19. Nanoscale devices based on plasmonic coaxial waveguide resonators

    Science.gov (United States)

    Mahigir, A.; Dastmalchi, P.; Shin, W.; Fan, S.; Veronis, G.

    2015-02-01

    Waveguide-resonator systems are particularly useful for the development of several integrated photonic devices, such as tunable filters, optical switches, channel drop filters, reflectors, and impedance matching elements. In this paper, we introduce nanoscale devices based on plasmonic coaxial waveguide resonators. In particular, we investigate threedimensional nanostructures consisting of plasmonic coaxial stub resonators side-coupled to a plasmonic coaxial waveguide. We use coaxial waveguides with square cross sections, which can be fabricated using lithography-based techniques. The waveguides are placed on top of a silicon substrate, and the space between inner and outer coaxial metals is filled with silica. We use silver as the metal. We investigate structures consisting of a single plasmonic coaxial resonator, which is terminated either in a short or an open circuit, side-coupled to a coaxial waveguide. We show that the incident waveguide mode is almost completely reflected on resonance, while far from the resonance the waveguide mode is almost completely transmitted. We also show that the properties of the waveguide systems can be accurately described using a single-mode scattering matrix theory. The transmission and reflection coefficients at waveguide junctions are either calculated using the concept of the characteristic impedance or are directly numerically extracted using full-wave three-dimensional finite-difference frequency-domain simulations.

  20. Physics of quantum rings

    International Nuclear Information System (INIS)

    Fomin, Vladimir M.

    2014-01-01

    Presents the new class of materials of quantum rings. Provides an elemental basis for low-cost high-performance devices promising for electronics, optoelectronics, spintronics and quantum information processing. Explains the physical properties of quantum rings to cover a gap in scientific literature. Presents the application of most advanced nanoengineering and nanocharacterization techniques. This book deals with a new class of materials, quantum rings. Innovative recent advances in experimental and theoretical physics of quantum rings are based on the most advanced state-of-the-art fabrication and characterization techniques as well as theoretical methods. The experimental efforts allow to obtain a new class of semiconductor quantum rings formed by capping self-organized quantum dots grown by molecular beam epitaxy. Novel optical and magnetic properties of quantum rings are associated with non-trivial topologies at the nanoscale. An adequate characterization of quantum rings is possible on the basis of modern characterization methods of nanostructures, such as Scanning Tunneling Microscopy. A high level of complexity is demonstrated to be needed for a dedicated theoretical model to adequately represent the specific features of quantum rings. The findings presented in this book contribute to develop low-cost high-performance electronic, spintronic, optoelectronic and information processing devices based on quantum rings.

  1. Influence of alkylphosphonic acid grafting on the electronic and magnetic properties of La{sub 2/3}Sr{sub 1/3}MnO{sub 3} surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Galbiati, Marta [Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France); Université Paris-Sud, 91405 Orsay (France); Tatay, Sergio, E-mail: sergio.tatay@uv.es [Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France); Université Paris-Sud, 91405 Orsay (France); Instituto de Ciencia Molecular (ICMol), Universitat de Valencia, C. Caterdratico Jose Beltran 2, 46980 Paterna (Spain); Delprat, Sophie [Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France); Université Paris-Sud, 91405 Orsay (France); UPMC, Université Paris 06, 4 Place Jussieu, 75005 Paris (France); Barraud, Clément; Cros, Vincent; Jacquet, Eric [Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France); Université Paris-Sud, 91405 Orsay (France); Coloma, Fernando [Servicios Técnicos de Investigación, Universidad de Alicante, E-03080 Alicante (Spain); Choueikani, Fadi; Otero, Edwige; Ohresser, Philippe [Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, BP 48, FR-91192 Gif-sur-Yvette (France); Haag, Norman; Cinchetti, Mirko; Aeschlimann, Martin [Department of Physics and Research Center OPTIMAS, University of Kaiserslautern, Erwin-Schroedinger Strasse 46, 67663 Kaiserslautern (Germany); Seneor, Pierre, E-mail: pierre.seneor@thalesgroup.com [Unité Mixte de Physique CNRS-Thales, 1 Av. A. Fresnel, 91767 Palaiseau (France); Université Paris-Sud, 91405 Orsay (France); and others

    2015-10-30

    Highlights: • Probe the influence of alkylphosphonic acids-based SAMs on the electronic and magnetic properties of the LSMO. • Measure the modification of the Mn oxidation state of LSMO surface induced by the molecules grafting. • Evaluate the modification of the LSMO work function induced by the alkylphosphonic acids molecules. - Abstract: Self-assembled monolayers (SAMs) are highly promising materials for molecular engineering of electronic and spintronics devices thanks to their surface functionalization properties. In this direction, alkylphosphonic acids have been used to functionalize the most common ferromagnetic electrode in organic spintronics: La{sub 2/3}Sr{sub 1/3}MnO{sub 3} (LSMO). However, a study on the influence of SAMs grafting on LSMO electronic and magnetic properties is still missing. In this letter, we probe the influence of alkylphosphonic acids-based SAMs on the electronic and magnetic properties of the LSMO surface using different spectroscopies. We observe by X-ray photoemission and X-ray absorption that the grafting of the molecules on the LSMO surface induces a reduction of the Mn oxidation state. Ultraviolet photoelectron spectroscopy measurements also show that the LSMO work function can be modified by surface dipoles opening the door to both tune the charge and spin injection efficiencies in organic devices such as organic light-emitting diodes.

  2. Spin injection and transport in semiconductor and metal nanostructures

    Science.gov (United States)

    Zhu, Lei

    In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes

  3. Promising half-metallicity in ductile NbF3: a first-principles prediction.

    Science.gov (United States)

    Yang, Bo; Wang, Junru; Liu, Xiaobiao; Zhao, Mingwen

    2018-02-14

    Materials with half-metallicity are long desired in spintronics. Using first-principles calculations, we predicted that the already-synthesized NbF 3 crystal is a promising half-metal with a large exchange splitting and stable ferromagnetism. The mechanical stability, ductility and softness of the NbF 3 crystal were confirmed by its elastic constants and moduli. The Curie temperature (T C = 120 K) estimated from the Monte Carlo simulations based on the 3D Ising model is above the liquid nitrogen temperature (78 K). The ferromagnetism and half-metallicity can be preserved on the surfaces of NbF 3 . The NbOF 2 formed by substituting F with O atoms, however, has an antiferromagnetic ground state and a normal metallic band structure. This work opens an avenue for half-metallic materials and may find applications in spintronic devices.

  4. Cobalt-Based Electrolytes for Dye-Sensitized Solar Cells: Recent Advances towards Stable Devices

    Directory of Open Access Journals (Sweden)

    Federico Bella

    2016-05-01

    Full Text Available Redox mediators based on cobalt complexes allowed dye-sensitized solar cells (DSCs to achieve efficiencies exceeding 14%, thus challenging the emerging class of perovskite solar cells. Unfortunately, cobalt-based electrolytes demonstrate much lower long-term stability trends if compared to the traditional iodide/triiodide redox couple. In view of the large-scale commercialization of cobalt-based DSCs, the scientific community has recently proposed various approaches and materials to increase the stability of these devices, which comprise gelling agents, crosslinked polymeric matrices and mixtures of solvents (including water. This review summarizes the most significant advances recently focused towards this direction, also suggesting some intriguing way to fabricate third-generation cobalt-based photoelectrochemical devices stable over time.

  5. High-efficiency terahertz polarization devices based on the dielectric metasurface

    Science.gov (United States)

    Zhou, Jian; Wang, JingJing; Guo, Kai; Shen, Fei; Zhou, Qingfeng; Zhiping yin; Guo, Zhongyi

    2018-02-01

    Metasurfaces are composed of the subwavelength structures, which can be used to manipulate the amplitude, phase, and polarization of incident electromagnetic waves efficiently. Here, we propose a novel type of dielectric metasurface based on crystal Si for realizing to manipulate the terahertz wave, in which by varying the geometric sizes of the Si micro-bricks, the transmitting phase of the terahertz wave can almost span over the entire 2π range for both of the x-polarization and y-polarization simultaneously, while keeping the similarly high-transmission amplitudes (over 90%). At the frequency of 1.0 THz, we have successfully designed a series of controllable THz devices, such as the polarization-dependent beam splitter, polarization-independent beam deflector and the focusing lenses based on the designed metasurfaces. Our designs are easy to fabricate and can be promising in developing high-efficiency THz functional devices.

  6. Effect of single walled carbon nanotubes on the threshold voltage of dye based photovoltaic devices

    International Nuclear Information System (INIS)

    Chakraborty, S.; Manik, N.B.

    2016-01-01

    Carbon nanotubes are being widely used in organic photovoltaic (OPV) devices as their usage has been reported to enhance the device efficiency along with other related parameters. In this work we have studied the energy (E_c) effect of single walled carbon nanotubes (SWCNT) on the threshold voltage (V_t_h) and also on the trap states of dye based photovoltaic devices. SWCNT is added in a series of dyes such as Rose Bengal (RB), Methyl Red (MR), Malachite Green (MG) and Crystal Violet (CV). By analysing the steady state dark current–voltage (I–V) characteristics V_t_h and E_c is estimated for the different devices with and without addition of SWCNT. It is observed that on an average for all the dyes V_t_h is reduced by about 30% in presence of SWCNT. The trap energy E_c also reduces in case of all the dyes. The relation between V_t_h, E_c and total trap density is discussed. From the photovoltaic measurements it is seen that the different photovoltaic parameters change with addition of SWCNT to the dye based devices. Both the short circuit current density and fill factor are found to increase for all the dye based devices in presence of SWCNT.

  7. Developing an Anti-Xa-Based Anticoagulation Protocol for Patients with Percutaneous Ventricular Assist Devices.

    Science.gov (United States)

    Sieg, Adam; Mardis, B Andrew; Mardis, Caitlin R; Huber, Michelle R; New, James P; Meadows, Holly B; Cook, Jennifer L; Toole, J Matthew; Uber, Walter E

    2015-01-01

    Because of the complexities associated with anticoagulation in temporary percutaneous ventricular assist device (pVAD) recipients, a lack of standardization exists in their management. This retrospective analysis evaluates current anticoagulation practices at a single center with the aim of identifying an optimal anticoagulation strategy and protocol. Patients were divided into two cohorts based on pVAD implanted (CentriMag (Thoratec; Pleasanton, CA) / TandemHeart (CardiacAssist; Pittsburgh, PA) or Impella (Abiomed, Danvers, MA)), with each group individually analyzed for bleeding and thrombotic complications. Patients in the CentriMag/TandemHeart cohort were subdivided based on the anticoagulation monitoring strategy (activated partial thromboplastin time (aPTT) or antifactor Xa unfractionated heparin (anti-Xa) values). In the CentriMag/TandemHeart cohort, there were five patients with anticoagulation titrated based on anti-Xa values; one patient developed a device thrombosis and a major bleed, whereas another patient experienced major bleeding. Eight patients received an Impella pVAD. Seven total major bleeds in three patients and no thrombotic events were detected. Based on distinct differences between the devices, anti-Xa values, and outcomes, two protocols were created to guide anticoagulation adjustments. However, anticoagulation in patients who require pVAD support is complex with constantly evolving anticoagulation goals. The ideal level of anticoagulation should be individually determined using several coagulation laboratory parameters in concert with hemodynamic changes in the patient's clinical status, the device, and the device cannulation.

  8. Graphene-based devices in terahertz science and technology

    International Nuclear Information System (INIS)

    Otsuji, T; Boubanga Tombet, S A; Satou, A; Fukidome, H; Suemitsu, M; Ryzhii, V; Sano, E; Popov, V; Ryzhii, M

    2012-01-01

    Graphene is a one-atom-thick planar sheet of a honeycomb carbon crystal. Its gapless and linear energy spectra of electrons and holes lead to nontrivial features such as giant carrier mobility and broadband flat optical response. In this paper, recent advances in graphene-based devices in terahertz science and technology are reviewed. First, the fundamental basis of the optoelectronic properties of graphene is introduced. Second, synthesis and crystallographic characterization of graphene material are described, particularly focused on the authors' original heteroepitaxial graphene-on-silicon technology. Third, nonequilibrium carrier relaxation and recombination dynamics in optically or electrically pumped graphene are described to introduce a possibility of negative-dynamic conductivity in a wide terahertz range. Fourth, recent theoretical advances towards the creation of current-injection graphene terahertz lasers are described. Fifth, the unique terahertz dynamics of the two-dimensional plasmons in graphene are described. Finally, the advantages of graphene devices for terahertz applications are summarized. (topical review)

  9. EDITORIAL: Cluster issue on Heusler compounds and devices Cluster issue on Heusler compounds and devices

    Science.gov (United States)

    Felser, Claudia; Hillebrands, Burkard

    2009-04-01

    of the spin-Hall effect, spin-torque investigations and CPP GMR (current perpendicular plane giant magnetoresistance). Schneider et al have studied the Hall effect of laser ablated Co2(MnFe)Si thin films. Recently Inomata's group has reported on a high CPP GMR effect based on CFSA [19]. In this issue a theoretical study by Dai et al reports on the interfaces between CCFA and very thin chromium layers. Here the interface stays half-metallic which is a promising result regarding the realization of potential GMR devices. For spin-torque applications special requirements concerning the materials are necessary. Low damping constants, low magnetic moments and a perpendicular anisotropy are favourable properties. Ferrimagnetic Heusler compounds are candidates for low magnetic moments despite a high spin polarization and a high Curie temperature [20, 21]. Mn3Ga shows additionally a tetragonal distortion, which is favourable for perpendicular anisotropy [21]. The stability of Heusler compounds versus structural distortion is a well known phenomenon in shape memory alloys [22]. We hope this cluster of papers will inspire many researchers in the field of spintronics and motivate some of them to use these advanced materials for new devices. References [1] Heusler F 1903 Verh. Dtsch. Phys. Ges. 12 219 [2] de Groot R A, Müller F M, van Engen P G and Buschow K H J 1983 Phys. Rev. Lett. 50 2024 [3] Kübler J, Williams A R, Sommers C B 1983 Phys. Rev. B 28 1745 [4] Block T, Felser C and Jakob G 2003 J. Solid State Chem. 176 646 [5] Galanakis I, Mavropoulos Ph and Dederichs P H 2006 J. Phys. D: Appl. Phys. 39 765 [6] Kandpal H C, Fecher G H and Felser C 2007 J. Phys. D: Appl. Phys. 40 1507 [7] Wurmehl S, Fecher G H, Kandpal H C, Ksenofontov V, Felser C and Lin H J 2006 Appl. Phys. Lett. 86 032503 [8] Kämmerer S, Thomas A, Hütten A and Reiss G 2004 Appl. Phys. Lett. 85 79 [9] Yamato M, Marukame T, Ishikawa T, Matsuda K, Uemura T and Arita M 2006 J. Phys. D: Appl. Phys. 39 824 [10

  10. Novel protease-based diagnostic devices for detection of wound infection

    NARCIS (Netherlands)

    Heinzle, A.; Papen-Botterhuis, N.E.; Schiffer, D.; Schneider, K.P.; Binder, B.; Schintler, M.; Haaksman, I.K.; Lenting, H.B.; Gübitz, G.M.; Sigl, E.

    2013-01-01

    A gelatinase-based device for fast detection of wound infection was developed. Collective gelatinolytic activity in infected wounds was 23 times higher (p ≤ 0.001) than in noninfected wounds and blisters according to the clinical and microbiological description of the wounds. Enzyme activities of

  11. Fun During Knee Rehabilitation: Feasibility and Acceptability Testing of a New Android-Based Training Device.

    Science.gov (United States)

    Weber-Spickschen, Thomas Sanjay; Colcuc, Christian; Hanke, Alexander; Clausen, Jan-Dierk; James, Paul Abraham; Horstmann, Hauke

    2017-01-01

    The initial goals of rehabilitation after knee injuries and operations are to achieve full knee extension and to activate quadriceps muscle. In addition to regular physiotherapy, an android-based knee training device is designed to help patients achieve these goals and improve compliance in the early rehabilitation period. This knee training device combines fun in a computer game with muscular training or rehabilitation. Our aim was to test the feasibility and acceptability of this new device. 50 volunteered subjects enrolled to test out the computer game aided device. The first game was the high-striker game, which recorded maximum knee extension power. The second game involved controlling quadriceps muscular power to simulate flying an aeroplane in order to record accuracy of muscle activation. The subjects evaluated this game by completing a simple questionnaire. No technical problem was encountered during the usage of this device. No subjects complained of any discomfort after using this device. Measurements including maximum knee extension power, knee muscle activation and control were recorded successfully. Subjects rated their experience with the device as either excellent or very good and agreed that the device can motivate and monitor the progress of knee rehabilitation training. To the best of our knowledge, this is the first android-based tool available to fast track knee rehabilitation training. All subjects gave very positive feedback to this computer game aided knee device.

  12. Highly efficient quantum dot-based photoconductive THz materials and devices

    Science.gov (United States)

    Rafailov, E. U.; Leyman, R.; Carnegie, D.; Bazieva, N.

    2013-09-01

    We demonstrate Terahertz (THz) signal sources based on photoconductive (PC) antenna devices comprising active layers of InAs semiconductor quantum dots (QDs) on GaAs. Antenna structures comprised of multiple active layers of InAs:GaAs PC materials are optically pumped using ultrashort pulses generated by a Ti:Sapphire laser and CW dualwavelength laser diodes. We also characterised THz output signals using a two-antenna coherent detection system. We discuss preliminary performance data from such InAs:GaAs THz devices which exhibit efficient emission of both pulsed and continuous wave (CW) THz signals and significant optical-to-THz conversion at both absorption wavelength ranges, <=850 nm and <=1300 nm.

  13. A Pareto-based multi-objective optimization algorithm to design energy-efficient shading devices

    International Nuclear Information System (INIS)

    Khoroshiltseva, Marina; Slanzi, Debora; Poli, Irene

    2016-01-01

    Highlights: • We present a multi-objective optimization algorithm for shading design. • We combine Harmony search and Pareto-based procedures. • Thermal and daylighting performances of external shading were considered. • We applied the optimization process to a residential social housing in Madrid. - Abstract: In this paper we address the problem of designing new energy-efficient static daylight devices that will surround the external windows of a residential building in Madrid. Shading devices can in fact largely influence solar gains in a building and improve thermal and lighting comforts by selectively intercepting the solar radiation and by reducing the undesirable glare. A proper shading device can therefore significantly increase the thermal performance of a building by reducing its energy demand in different climate conditions. In order to identify the set of optimal shading devices that allow a low energy consumption of the dwelling while maintaining high levels of thermal and lighting comfort for the inhabitants we derive a multi-objective optimization methodology based on Harmony Search and Pareto front approaches. The results show that the multi-objective approach here proposed is an effective procedure in designing energy efficient shading devices when a large set of conflicting objectives characterizes the performance of the proposed solutions.

  14. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

    Science.gov (United States)

    Shim, Jaewoo; Oh, Seyong; Kang, Dong-Ho; Jo, Seo-Hyeon; Ali, Muhammad Hasnain; Choi, Woo-Young; Heo, Keun; Jeon, Jaeho; Lee, Sungjoo; Kim, Minwoo; Song, Young Jae; Park, Jin-Hong

    2016-01-01

    Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research. PMID:27819264

  15. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

    Science.gov (United States)

    Shim, Jaewoo; Oh, Seyong; Kang, Dong-Ho; Jo, Seo-Hyeon; Ali, Muhammad Hasnain; Choi, Woo-Young; Heo, Keun; Jeon, Jaeho; Lee, Sungjoo; Kim, Minwoo; Song, Young Jae; Park, Jin-Hong

    2016-11-01

    Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

  16. Paper-based device for separation and cultivation of single microalga.

    Science.gov (United States)

    Chen, Chih-Chung; Liu, Yi-Ju; Yao, Da-Jeng

    2015-12-01

    Single-cell separation is among the most useful techniques in biochemical research, diagnosis and various industrial applications. Microalgae species have great economic importance as industrial raw materials. Microalgae species collected from environment are typically a mixed and heterogeneous population of species that must be isolated and purified for examination and further application. Conventional methods, such as serial dilution and a streaking-plate method, are intensive of labor and inefficient. We developed a paper-based device for separation and cultivation of single microalga. The fabrication was simply conducted with a common laser printer and required only a few minutes without lithographic instruments and clean-room. The driving force of the paper device was simple capillarity without a complicated pump connection that is part of most devices for microfluidics. The open-structure design of the paper device makes it operable with a common laboratory micropipette for sample transfer and manipulation with a naked eye or adaptable to a robotic system with functionality of high-throughput retrieval and analysis. The efficiency of isolating a single cell from mixed microalgae species is seven times as great as with a conventional method involving serial dilution. The paper device can serve also as an incubator for microalgae growth on simply rinsing the paper with a growth medium. Many applications such as highly expressed cell selection and various single-cell analysis would be applicable. Copyright © 2015 Elsevier B.V. All rights reserved.

  17. Spin-Polarized Hybridization at the interface between different 8-hydroxyquinolates and the Cr(001) surface

    Science.gov (United States)

    Wang, Jingying; Deloach, Andrew; Dougherty, Daniel B.; Dougherty Lab Team

    Organic materials attract a lot of attention due to their promising applications in spintronic devices. It is realized that spin-polarized metal/organic interfacial hybridization plays an important role to improve efficiency of organic spintronic devices. Hybridized interfacial states help to increase spin injection at the interface. Here we report spin-resolved STM measurements of single tris(8-hydroxyquinolinato) aluminum molecules adsorbed on the antiferromagnetic Cr(001). Our observations show a spin-polarized interface state between Alq3 and Cr(001). Tris(8-hydroxyquinolinato) chromium has also been studied and compared with Alq3, which exhibits different spin-polarized hybridization with the Cr(001) surface state than Alq3. We attribute the differences to different character of molecular orbitals in the two different quinolates.

  18. Antiferromagnetic phase of the gapless semiconductor V3Al

    Science.gov (United States)

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D.; Lewis, L. H.; Saúl, A. A.; Radtke, G.; Heiman, D.

    2015-03-01

    Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. The AF gapless semiconducting D 03 phase of V3Al was successfully synthesized via arc-melting and annealing. The AF properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-thirds of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction, and transport measurements also support the antiferromagnetism. This archetypal gapless semiconductor may be considered as a cornerstone for future spintronic devices containing AF elements.

  19. Poly (N-isopropylacrylamide Microgel-Based Optical Devices for Sensing and Biosensing

    Directory of Open Access Journals (Sweden)

    Molla R. Islam

    2014-05-01

    Full Text Available Responsive polymer-based materials have found numerous applications due to their ease of synthesis and the variety of stimuli that they can be made responsive to. In this review, we highlight the group’s efforts utilizing thermoresponsive poly (N-isopropylacrylamide (pNIPAm microgel-based optical devices for various sensing and biosensing applications.

  20. Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

    Science.gov (United States)

    Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

    2013-08-27

    Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

  1. Iron Oxide Nanoparticle-Based Magnetic Ink Development for Fully Printed Tunable Radio-Frequency Devices

    KAUST Repository

    Vaseem, Mohammad

    2018-01-30

    The field of printed electronics is still in its infancy and most of the reported work is based on commercially available nanoparticle-based metallic inks. Although fully printed devices that employ dielectric/semiconductor inks have recently been reported, there is a dearth of functional inks that can demonstrate controllable devices. The lack of availability of functional inks is a barrier to the widespread use of fully printed devices. For radio-frequency electronics, magnetic materials have many uses in reconfigurable components but rely on expensive and rigid ferrite materials. A suitable magnetic ink can facilitate the realization of fully printed, magnetically controlled, tunable devices. This report presents the development of an iron oxide nanoparticle-based magnetic ink. First, a tunable inductor is fully printed using iron oxide nanoparticle-based magnetic ink. Furthermore, iron oxide nanoparticles are functionalized with oleic acid to make them compatible with a UV-curable SU8 solution. Functionalized iron oxide nanoparticles are successfully embedded in the SU8 matrix to make a magnetic substrate. The as-fabricated substrate is characterized for its magnetostatic and microwave properties. A frequency tunable printed patch antenna is demonstrated using the magnetic and in-house silver-organo-complex inks. This is a step toward low-cost, fully printed, controllable electronic components.

  2. Carbon based prosthetic devices

    Energy Technology Data Exchange (ETDEWEB)

    Devlin, D.J.; Carroll, D.W.; Barbero, R.S.; Archuleta, T. [Los Alamos National Lab., NM (US); Klawitter, J.J.; Ogilvie, W.; Strzepa, P. [Ascension Orthopedics (US); Cook, S.D. [Tulane Univ., New Orleans, LA (US). School of Medicine

    1998-12-31

    This is the final report of a one-year, Laboratory Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project objective was to evaluate the use of carbon/carbon-fiber-reinforced composites for use in endoprosthetic devices. The application of these materials for the metacarpophalangeal (MP) joints of the hand was investigated. Issues concerning mechanical properties, bone fixation, biocompatibility, and wear are discussed. A system consisting of fiber reinforced materials with a pyrolytic carbon matrix and diamond-like, carbon-coated wear surfaces was developed. Processes were developed for the chemical vapor infiltration (CVI) of pyrolytic carbon into porous fiber preforms with the ability to tailor the outer porosity of the device to provide a surface for bone in-growth. A method for coating diamond-like carbon (DLC) on the articulating surface by plasma-assisted chemical vapor deposition (CVD) was developed. Preliminary results on mechanical properties of the composite system are discussed and initial biocompatibility studies were performed.

  3. Low-cost rapid prototyping of flexible plastic paper based microfluidic devices

    KAUST Repository

    Fan, Yiqiang; Li, Huawei; Yi, Ying; Foulds, Ian G.

    2013-01-01

    This research presents a novel rapid prototyping method for paper-based flexible microfluidic devices. The microchannels were fabricated using laser ablation on a piece of plastic paper (permanent paper), the dimensions of the microchannels

  4. Hearing Tests Based on Biologically Calibrated Mobile Devices: Comparison With Pure-Tone Audiometry.

    Science.gov (United States)

    Masalski, Marcin; Grysiński, Tomasz; Kręcicki, Tomasz

    2018-01-10

    Hearing screening tests based on pure-tone audiometry may be conducted on mobile devices, provided that the devices are specially calibrated for the purpose. Calibration consists of determining the reference sound level and can be performed in relation to the hearing threshold of normal-hearing persons. In the case of devices provided by the manufacturer, together with bundled headphones, the reference sound level can be calculated once for all devices of the same model. This study aimed to compare the hearing threshold measured by a mobile device that was calibrated using a model-specific, biologically determined reference sound level with the hearing threshold obtained in pure-tone audiometry. Trial participants were recruited offline using face-to-face prompting from among Otolaryngology Clinic patients, who own Android-based mobile devices with bundled headphones. The hearing threshold was obtained on a mobile device by means of an open access app, Hearing Test, with incorporated model-specific reference sound levels. These reference sound levels were previously determined in uncontrolled conditions in relation to the hearing threshold of normal-hearing persons. An audiologist-assisted self-measurement was conducted by the participants in a sound booth, and it involved determining the lowest audible sound generated by the device within the frequency range of 250 Hz to 8 kHz. The results were compared with pure-tone audiometry. A total of 70 subjects, 34 men and 36 women, aged 18-71 years (mean 36, standard deviation [SD] 11) participated in the trial. The hearing threshold obtained on mobile devices was significantly different from the one determined by pure-tone audiometry with a mean difference of 2.6 dB (95% CI 2.0-3.1) and SD of 8.3 dB (95% CI 7.9-8.7). The number of differences not greater than 10 dB reached 89% (95% CI 88-91), whereas the mean absolute difference was obtained at 6.5 dB (95% CI 6.2-6.9). Sensitivity and specificity for a mobile-based

  5. Design of a terahertz CW photomixer based on PIN and superlattice PIN devices

    DEFF Research Database (Denmark)

    Krozer, Viktor; Eichhorn, Finn

    2006-01-01

    We present the design of a photomixer LO based on standard and superlattice PIN diodes, operating at 1 THz. The design is based on a direct integration of a double slot antenna with the PIN device and a suitable matching circuit. The antenna has been designed together with a dielectric lens using...... Ansoft HFSS EM simulation. The large-signal PIN diode model employed in the work has been improved compared to our previously developed model presented earlier in a 3 THz design. We demonstrate that the antenna characteristic changes drastically with the device in place....

  6. Tests of microprocessor-based relay protection devices: Problems and solutions

    Directory of Open Access Journals (Sweden)

    Gurevich Vladimir

    2009-01-01

    Full Text Available Usually, the operational condition of relay protection devices is checked with specific settings used for the relay operation in a certain network point. In the author's opinion in order to verify the proper operation of complex multifunctional microprocessor-based protection devices (MPD at their inspection, start-up after repairs or during periodic tests there is no need to use the actual settings at which the relay is to be operated in a certain network's point. It should be tested for proper operation at several of its most critical preset characteristic points as well as in several preset characteristics constituting its most complicated (combined operation modes, including the dynamic operation modes with preset transition processes specific for standard power networks (not necessarily for a specific point. The proposed set of actions for the unification of software platforms of the modern, microprocessor-based relay protection test systems will enable examination of modern MPD in an absolutely new way. .

  7. Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

    Science.gov (United States)

    Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

    2017-10-26

    The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

  8. DNA-based nanobiostructured devices: The role of quasiperiodicity and correlation effects

    Energy Technology Data Exchange (ETDEWEB)

    Albuquerque, E.L., E-mail: eudenilson@gmail.com [Departamento de Biofísica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil); Fulco, U.L. [Departamento de Biofísica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil); Freire, V.N. [Departamento de Física, Universidade Federal do Ceará, 60455-760, Fortaleza-CE (Brazil); Caetano, E.W.S. [Instituto Federal de Educação, Ciência e Tecnologia do Ceará, 60040-531, Fortaleza-CE (Brazil); Lyra, M.L.; Moura, F.A.B.F. de [Instituto de Física, Universidade Federal de Alagoas, 57072-970, Maceió-AL (Brazil)

    2014-02-01

    The purpose of this review is to present a comprehensive and up-to-date account of the main physical properties of DNA-based nanobiostructured devices, stressing the role played by their quasi-periodicity arrangement and correlation effects. Although the DNA-like molecule is usually described as a short-ranged correlated random ladder, artificial segments can be grown following quasiperiodic sequences as, for instance, the Fibonacci and Rudin–Shapiro ones. They have interesting properties like a complex fractal spectra of energy, which can be considered as their indelible mark, and collective properties that are not shared by their constituents. These collective properties are due to the presence of long-range correlations, which are expected to be reflected somehow in their various spectra (electronic transmission, density of states, etc.) defining another description of disorder. Although long-range correlations are responsible for the effective electronic transport at specific resonant energies of finite DNA segments, much of the anomalous spread of an initially localized electron wave-packet can be accounted by short-range pair correlations, suggesting that an approach based on the inclusion of further short-range correlations on the nucleotide distribution leads to an adequate description of the electronic properties of DNA segments. The introduction of defects may generate states within the gap, and substantially improves the conductance, specially of finite branches. They usually become exponentially localized for any amount of disorder, and have the property to tailor the electronic transport properties of DNA-based nanoelectronic devices. In particular, symmetric and antisymmetric correlations have quite distinct influence on the nature of the electronic states, and a diluted distribution of defects lead to an anomalous diffusion of the electronic wave-packet. Nonlinear contributions, arising from the coupling between electrons and the molecular

  9. 78 FR 36698 - Microbiology Devices; Reclassification of Nucleic Acid-Based Systems for Mycobacterium tuberculosis

    Science.gov (United States)

    2013-06-19

    .... FDA-2013-N-0544] Microbiology Devices; Reclassification of Nucleic Acid-Based Systems for... workshop, FDA agreed to consider this issue further and subsequently convened a meeting of the Microbiology... Health After considering the information discussed by the Microbiology Devices Panel during the June 29...

  10. Understanding the conductive channel evolution in Na:WO3-x-based planar devices

    Science.gov (United States)

    Shang, Dashan; Li, Peining; Wang, Tao; Carria, Egidio; Sun, Jirong; Shen, Baogen; Taubner, Thomas; Valov, Ilia; Waser, Rainer; Wuttig, Matthias

    2015-03-01

    An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO3-x) films on a soda-lime glass substrate, from which Na+ diffuses into the WO3-x films during the deposition. The entire process of Na+ migration driven by an alternating electric field is visualized in the Na-doped WO3-x films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the devices. The peculiar channel evolution is interpreted by a thermal-stress-induced mechanical deformation of the films and an asymmetric Na+ mobility between the parabolic and the bar channels. These results exemplify a typical ion migration process driven by an alternating electric field in a solid electrolyte with a low ion mobility and are expected to be beneficial to improve the controllability of the ion migration in ion-based functional devices, such as resistive switching devices.An ion migration process in a solid electrolyte is important for ion-based functional devices, such as fuel cells, batteries, electrochromics, gas sensors, and resistive switching systems. In this study, a planar sandwich structure is prepared by depositing tungsten oxide (WO3-x) films on a soda-lime glass substrate, from which Na+ diffuses into the WO3-x films during the deposition. The entire process of Na+ migration driven by an alternating electric field is visualized in the Na-doped WO3-x films in the form of conductive channel by in situ optical imaging combined with infrared spectroscopy and near-field imaging techniques. A reversible change of geometry between a parabolic and a bar channel is observed with the resistance change of the

  11. Design and analysis on sorting blade for automated size-based sorting device

    Science.gov (United States)

    Razali, Zol Bahri; Kader, Mohamed Mydin M. Abdul; Samsudin, Yasser Suhaimi; Daud, Mohd Hisam

    2017-09-01

    Nowadays rubbish separating or recycling is a main problem of nation, where peoples dumped their rubbish into dumpsite without caring the value of the rubbish if it can be recycled and reused. Thus the author proposed an automated segregating device, purposely to teach people to separate their rubbish and value the rubbish that can be reused. The automated size-based mechanical segregating device provides significant improvements in terms of efficiency and consistency in this segregating process. This device is designed to make recycling easier, user friendly, in the hope that more people will take responsibility if it is less of an expense of time and effort. This paper discussed about redesign a blade for the sorting device which is to develop an efficient automated mechanical sorting device for the similar material but in different size. The machine is able to identify the size of waste and it depends to the coil inside the container to separate it out. The detail design and methodology is described in detail in this paper.

  12. Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

    Energy Technology Data Exchange (ETDEWEB)

    Kawakita, Masatoshi; Okabe, Kyota [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Kimura, Takashi [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Research Center for Quantum Nano-Spin Sciences, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)

    2016-01-11

    We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO{sub x} bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO{sub x} system similarly in the vertical device based on GdO{sub x}. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO{sub x} device. The superior performance of the CoFeB/GdO{sub x} device implies the importance of the spin on the resistive switching.

  13. Synthesis and characterization of ZnO and Ni doped ZnO nanorods by thermal decomposition method for spintronics application

    International Nuclear Information System (INIS)

    Saravanan, R.; Santhi, Kalavathy; Sivakumar, N.; Narayanan, V.; Stephen, A.

    2012-01-01

    Zinc oxide nanorods and diluted magnetic semiconducting Ni doped ZnO nanorods were prepared by thermal decomposition method. This method is simple and cost effective. The decomposition temperature of acetate and formation of oxide were determined by TGA before the actual synthesis process. The X-ray diffraction result indicates the single phase hexagonal structure of zinc oxide. The transmission electron microscopy and scanning electron microscopy images show rod like structure of ZnO and Ni doped ZnO samples with the diameter ∼ 35 nm and the length in few micrometers. The surface analysis was performed using X-ray photoelectron spectroscopic studies. The Ni doped ZnO exhibits room temperature ferromagnetism. This diluted magnetic semiconducting Ni doped ZnO nanorods finds its application in spintronics. - Highlights: ► The method used is very simple and cost effective compared to all other methods for the preparation DMS materials. ► ZnO and Ni doped ZnO nanorods ► Ferromagnetism at room temperature

  14. Four-state ferroelectric spin-valve

    Czech Academy of Sciences Publication Activity Database

    Quindeau, A.; Fina, I.; Martí, Xavier; Apachitei, G.; Ferrer, P.; Nicklin, C.; Pippel, E.; Hesse, D.; Alexe, M.

    2015-01-01

    Roč. 5, May (2015), 09749 ISSN 2045-2322 Institutional support: RVO:68378271 Keywords : electronic and spintronic devices * ferroelectrics and multiferroics Subject RIV: BE - Theoretical Physics Impact factor: 5.228, year: 2015

  15. Printing-based fabrication method using sacrificial paper substrates for flexible and wearable microfluidic devices

    International Nuclear Information System (INIS)

    Chung, Daehan; Gray, Bonnie L

    2017-01-01

    We present a simple, fast, and inexpensive new printing-based fabrication process for flexible and wearable microfluidic channels and devices. Microfluidic devices are fabricated on textiles (fabric) for applications in clothing-based wearable microfluidic sensors and systems. The wearable and flexible microfluidic devices are comprised of water-insoluable screen-printable plastisol polymer. Sheets of paper are used as sacrificial substrates for multiple layers of polymer on the fabric’s surface. Microfluidic devices can be made within a short time using simple processes and inexpensive equipment that includes a laser cutter and a thermal laminator. The fabrication process is characterized to demonstrate control of microfluidic channel thickness and width. Film thickness smaller than 100 micrometers and lateral dimensions smaller than 150 micrometers are demonstrated. A flexible microfluidic mixer is also developed on fabric and successfully tested on both flat and curved surfaces at volumetric flow rates ranging from 5.5–46 ml min −1 . (paper)

  16. Printing-based fabrication method using sacrificial paper substrates for flexible and wearable microfluidic devices

    Science.gov (United States)

    Chung, Daehan; Gray, Bonnie L.

    2017-11-01

    We present a simple, fast, and inexpensive new printing-based fabrication process for flexible and wearable microfluidic channels and devices. Microfluidic devices are fabricated on textiles (fabric) for applications in clothing-based wearable microfluidic sensors and systems. The wearable and flexible microfluidic devices are comprised of water-insoluable screen-printable plastisol polymer. Sheets of paper are used as sacrificial substrates for multiple layers of polymer on the fabric’s surface. Microfluidic devices can be made within a short time using simple processes and inexpensive equipment that includes a laser cutter and a thermal laminator. The fabrication process is characterized to demonstrate control of microfluidic channel thickness and width. Film thickness smaller than 100 micrometers and lateral dimensions smaller than 150 micrometers are demonstrated. A flexible microfluidic mixer is also developed on fabric and successfully tested on both flat and curved surfaces at volumetric flow rates ranging from 5.5-46 ml min-1.

  17. Magnetic anisotropy and magnetization switching in ferromagnetic GaMnAs

    Energy Technology Data Exchange (ETDEWEB)

    Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

    2007-07-01

    Characteristic features of semiconductor spintronics such as the anisotropic magnetoresistance or the spin-polarization of charge carriers are intimately connected with the macroscopic magnetization in a ferromagnetic semiconductor. The orientation of the magnetization is controlled by magnetic anisotropy which predominantly ar ises from crystal symmetry, sample geometry, and strain. A detailed knowledge of this anisotropy is indispensable for the design of novel spintronic devices. In this talk, angle-dependent magnetotransport is demonstrated to be an excellent tool for probing magnetic anisotropy as an alternative to the standard ferromagnetic-resonance method. Moreover, its ability to trace the movement of the magnetization vector in a variable external magnetic field makes it ideally suitable f or studying magnetization switching, a potential basic effect in future logical devices. Experimental data recorded from a variety of different GaMnAs samples a re analyzed by means of model calculations which are based on a series expansion of the resistivity tensor, a numerical minimization of the free enthalpy with respect to the magnetization orientation, and the assumption that the GaMnAs laye rs under study consist of single ferromagnetic domains.

  18. An Industrial Radipgraphy Exposure Device Based on Measurement of Transmitted Gamma-Ray Intensity

    International Nuclear Information System (INIS)

    Polee, C.; Chankow, N.; Srisatit, S.; Thong-Aram, D.

    2014-01-01

    In film radiography, underexposure and overexposure may happen particularly when lacking knowledge of specimen material and hollowness. This paper describes a method and a device for determining exposure in industrial gamma-ray radiography based on quick measurement of transmitted gamma-ray intensity with a D3372 Hamamatsu small GM tube. Application software is developed for Android mobile phone to remotely control the device and to display the counting data via Bluetooth. Prior to placing film, the device is placed behind the specimen to be radiographed to determine the exposure time from the transmitted intensity which is independent on source activity, source-to-film distance, specimen thickness and kind of material. The developed technique and device make radiographic process economic, convenient and more reliable.

  19. Inverse spin-valve effect in nanoscale Si-based spin-valve devices

    Science.gov (United States)

    Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

    2017-12-01

    We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

  20. Numerical analysis of a polysilicon-based resistive memory device

    KAUST Repository

    Berco, Dan

    2018-03-08

    This study investigates a conductive bridge resistive memory device based on a Cu top electrode, 10-nm polysilicon resistive switching layer and a TiN bottom electrode, by numerical analysis for $$10^{3}$$103 programming and erase simulation cycles. The low and high resistive state values in each cycle are calculated, and the analysis shows that the structure has excellent retention reliability properties. The presented Cu species density plot indicates that Cu insertion occurs almost exclusively along grain boundaries resulting in a confined isomorphic conductive filament that maintains its overall shape and electric properties during cycling. The superior reliability of this structure may thus be attributed to the relatively low amount of Cu migrating into the RSL during initial formation. In addition, the results show a good match and help to confirm experimental measurements done over a previously demonstrated device.