WorldWideScience

Sample records for spin-polarized scanning tunnelling

  1. Spin-polarized scanning tunneling microscopy: breakthroughs and highlights.

    Science.gov (United States)

    Bode, Matthias

    2012-01-01

    The principle of scanning tunneling microscopy, an imaging method with atomic resolution capability invented by Binnig and Rohrer in 1982, can be adapted for surface magnetism studies by using magnetic probe tips. The contrast mechanism of this so-called spin-polarized scanning tunneling microscopy, or SP-STM, relies on the tunneling magneto-resistance effect, i.e. the tip-sample distance as well as the differential conductance depend on the relative magnetic orientation of tip and sample. To illustrate the working principle and the unique capabilities of SP-STM, this compilation presents some key experiments which have been performed on various magnetic surfaces, such as the topological antiferromagnet Cr(001), a double-layer of Fe which exhibits a stripe- domain pattern with about 50 nm periodicity, and the Mn monolayer on W(110), where the combination of experiment and theory reveal an antiferromagnetic spin cycloid. Recent experimental results also demonstrate the suitability of SP-STM for studies of dynamic properties, such as the spin relaxation time of single magnetic nanostructures.

  2. Compact scanning tunneling microscope for spin polarization measurements.

    Science.gov (United States)

    Kim, Seong Heon; de Lozanne, Alex

    2012-10-01

    We present a design for a scanning tunneling microscope that operates in ultrahigh vacuum down to liquid helium temperatures in magnetic fields up to 8 T. The main design philosophy is to keep everything compact in order to minimize the consumption of cryogens for initial cool-down and for extended operation. In order to achieve this, new ideas were implemented in the design of the microscope body, dewars, vacuum chamber, manipulators, support frame, and vibration isolation. After a brief description of these designs, the results of initial tests are presented.

  3. The impact of structural relaxation on spin polarization and magnetization reversal of individual nano structures studied by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Sander, Dirk; Phark, Soo-Hyon; Corbetta, Marco; Fischer, Jeison A; Oka, Hirofumi; Kirschner, Jürgen

    2014-10-01

    The application of low temperature spin-polarized scanning tunneling microscopy and spectroscopy in magnetic fields for the quantitative characterization of spin polarization, magnetization reversal and magnetic anisotropy of individual nano structures is reviewed. We find that structural relaxation, spin polarization and magnetic anisotropy vary on the nm scale near the border of a bilayer Co island on Cu(1 1 1). This relaxation is lifted by perimetric decoration with Fe. We discuss the role of spatial variations of the spin-dependent electronic properties within and at the edge of a single nano structure for its magnetic properties.

  4. In situ scanning tunneling microscope tip treatment device for spin polarization imaging

    Science.gov (United States)

    Li, An-Ping [Oak Ridge, TN; Jianxing, Ma [Oak Ridge, TN; Shen, Jian [Knoxville, TN

    2008-04-22

    A tip treatment device for use in an ultrahigh vacuum in situ scanning tunneling microscope (STM). The device provides spin polarization functionality to new or existing variable temperature STM systems. The tip treatment device readily converts a conventional STM to a spin-polarized tip, and thereby converts a standard STM system into a spin-polarized STM system. The tip treatment device also has functions of tip cleaning and tip flashing a STM tip to high temperature (>2000.degree. C.) in an extremely localized fashion. Tip coating functions can also be carried out, providing the tip sharp end with monolayers of coating materials including magnetic films. The device is also fully compatible with ultrahigh vacuum sample transfer setups.

  5. Recent advances in atomic-scale spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Smith, Arthur R; Yang, Rong; Yang, Haiqiang; Dick, Alexey; Neugebauer, Joerg; Lambrecht, Walter R L

    2005-02-01

    The Mn3N2 (010) surface has been studied using spin-polarized scanning tunneling microscopy at the atomic scale. The principle objective of this work is to elucidate the properties and potential of this technique to measure atomic-scale magnetic structures. The experimental approach involves the use of a combined molecular beam epitaxy/scanning tunneling microscopy system that allows the study of atomically clean magnetic surfaces. Several key findings have been obtained. First, both magnetic and non-magnetic atomic-scale information has been obtained in a single spin-polarized image. Magnetic modulation of the height profile having an antiferromagnetic super-period of c = 12.14 A (6 atomic rows) together with a non-magnetic superstructure having a period of c/2 = 6.07 A (3 atomic rows) was observed. Methods of separation of magnetic and non-magnetic profiles are presented. Second, bias voltage-dependent spin-polarized images show a reversal of the magnetic modulation at a particular voltage. This reversal is clearly due to a change in the sign of the magnetic term in the tunnel current. Since this term depends on both the tip's as well as the sample's magnetic local density of states, the reversal can be caused by either the sample or the tip. Third, the shape of the line profile was found to vary with the bias voltage, which is related to the energy-dependent spin contribution from the 2 chemically inequivalent Mn sites on the surface. Overall, the results shown here expand the application of the method of spin-polarized scanning tunneling microscopy to measure atomic-scale magnetic structures. (c) 2005 Wiley-Liss, Inc.

  6. Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

    NARCIS (Netherlands)

    Vera Marun, I.J.

    2010-01-01

    This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

  7. Spin-polarized scanning tunneling microscopy and spectroscopy study of chromium on a Cr(001) surface.

    Science.gov (United States)

    Lagoute, J; Kawahara, S L; Chacon, C; Repain, V; Girard, Y; Rousset, S

    2011-02-02

    Several tens of chromium layers were deposited at 250 °C on a Cr(001) surface and investigated by spin-polarized scanning tunneling microscopy (SP-STM), Auger electron spectroscopy (AES) and scanning tunneling spectroscopy (STS). Chromium is found to grow with a mound-like morphology resulting from the stacking of several monolayers which do not uniformly cover the whole surface of the substrate. The terminal plane consists of an irregular array of Cr islands with lateral sizes smaller than 20 × 20 nm(2). Combined AES and STS measurements reveal the presence of a significant amount of segregants prior to and after deposition. A detailed investigation of the surface shows that it consists of two types of patches. Thanks to STS measurements, the two types of area have been identified as being either chromium pure or segregant rich. SP-STM experiments have evidenced that the antiferromagnetic layer coupling remains in the chromium mounds after deposition and is not significantly affected by the presence of the segregants.

  8. Joule heating and spin-transfer torque investigated on the atomic scale using a spin-polarized scanning tunneling microscope.

    Science.gov (United States)

    Krause, S; Herzog, G; Schlenhoff, A; Sonntag, A; Wiesendanger, R

    2011-10-28

    The influence of a high spin-polarized tunnel current onto the switching behavior of a superparamagnetic nanoisland on a nonmagnetic substrate is investigated by means of spin-polarized scanning tunneling microscopy. A detailed lifetime analysis allows for a quantification of the effective temperature rise of the nanoisland and the modification of the activation energy barrier for magnetization reversal, thereby using the nanoisland as a local thermometer and spin-transfer torque analyzer. Both the Joule heating and spin-transfer torque are found to scale linearly with the tunnel current. The results are compared to experiments performed on lithographically fabricated magneto-tunnel junctions, revealing a very high spin-transfer torque switching efficiency in our experiments.

  9. Spin-polarized scanning tunneling microscopy with quantitative insights into magnetic probes.

    Science.gov (United States)

    Phark, Soo-Hyon; Sander, Dirk

    2017-01-01

    Spin-polarized scanning tunneling microscopy and spectroscopy (spin-STM/S) have been successfully applied to magnetic characterizations of individual nanostructures. Spin-STM/S is often performed in magnetic fields of up to some Tesla, which may strongly influence the tip state. In spite of the pivotal role of the tip in spin-STM/S, the contribution of the tip to the differential conductance d I /d V signal in an external field has rarely been investigated in detail. In this review, an advanced analysis of spin-STM/S data measured on magnetic nanoislands, which relies on a quantitative magnetic characterization of tips, is discussed. Taking advantage of the uniaxial out-of-plane magnetic anisotropy of Co bilayer nanoisland on Cu(111), in-field spin-STM on this system has enabled a quantitative determination, and thereby, a categorization of the magnetic states of the tips. The resulting in-depth and conclusive analysis of magnetic characterization of the tip opens new venues for a clear-cut sub-nanometer scale spin ordering and spin-dependent electronic structure of the non-collinear magnetic state in bilayer high Fe nanoislands on Cu(111).

  10. Spin-polarized scanning tunneling spectroscopy of self-organized nanoscale Co islands on Au(111) surfaces.

    Science.gov (United States)

    Schouteden, K; Muzychenko, D A; Van Haesendonck, C

    2008-07-01

    Magnetic monolayer and bilayer Co islands of only a few nanometer in size were grown by atomic deposition on atomically flat Au(111) films. The islands were studied in situ by scanning tunneling microscopy (STM) and spectroscopy at low temperatures. Spin-resolved tunneling spectroscopy, using an STM tip with a magnetic coating, revealed that the Co islands exhibit a net magnetization perpendicular to the substrate surface due to the presence of spin-polarized d-states. A random distribution of islands with either upward or downward pointing magnetization was observed, without any specific correlation of magnetization orientation with island size or island height.

  11. Interface-induced chiral domain walls, spin spirals and skyrmions revealed by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    von Bergmann, Kirsten; Kubetzka, André; Pietzsch, Oswald; Wiesendanger, Roland

    2014-10-01

    The spin textures of ultra-thin magnetic layers exhibit surprising variety. The loss of inversion symmetry at the interface of the magnetic layer and substrate gives rise to the so-called Dzyaloshinskii-Moriya interaction which favors non-collinear spin arrangements with unique rotational sense. Here we review the application of spin-polarized scanning tunneling microscopy to such systems, which has led to the discovery of interface-induced chiral domain walls and spin spirals. Recently, different interface-driven skyrmion lattices have been found, and the writing as well as the deleting of individual skyrmions based on local spin-polarized current injection has been demonstrated. These interface-induced non-collinear magnetic states offer new exciting possibilities to study fundamental magnetic interactions and to tailor material properties for spintronic applications.

  12. Spin-polarized scanning-tunneling probe for helical Luttinger liquids.

    Science.gov (United States)

    Das, Sourin; Rao, Sumathi

    2011-06-10

    We propose a three-terminal spin-polarized STM setup for probing the helical nature of the Luttinger liquid edge state that appears in the quantum spin Hall system. We show that the three-terminal tunneling conductance depends on the angle (θ) between the magnetization direction of the tip and the local orientation of the electron spin on the edge while the two terminal conductance is independent of this angle. We demonstrate that chiral injection of an electron into the helical Luttinger liquid (when θ is zero or π) is associated with fractionalization of the spin of the injected electron in addition to the fractionalization of its charge. We also point out a spin current amplification effect induced by the spin fractionalization.

  13. Experimental verification of the rotational type of chiral spin spiral structures by spin-polarized scanning tunneling microscopy.

    Science.gov (United States)

    Haze, Masahiro; Yoshida, Yasuo; Hasegawa, Yukio

    2017-10-16

    We report on experimental verification of the rotational type of chiral spin spirals in Mn thin films on a W(110) substrate using spin-polarized scanning tunneling microscopy (SP-STM) with a double-axis superconducting vector magnet. From SP-STM images using Fe-coated W tips magnetized to the out-of-plane and [001] directions, we found that both Mn mono- and double-layers exhibit cycloidal rotation whose spins rotate in the planes normal to the propagating directions. Our results agree with the theoretical prediction based on the symmetry of the system, supporting that the magnetic structures are driven by the interfacial Dzyaloshinskii-Moriya interaction.

  14. Spin polarized electron tunneling and magnetoresistance in molecular junctions.

    Science.gov (United States)

    Szulczewski, Greg

    2012-01-01

    This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

  15. Thermal stability of tunneling spin polarization

    International Nuclear Information System (INIS)

    Kant, C.H.; Kohlhepp, J.T.; Paluskar, P.V.; Swagten, H.J.M.; Jonge, W.J.M. de

    2005-01-01

    We present a study of the thermal stability of tunneling spin polarization in Al/AlOx/ferromagnet junctions based on the spin-polarized tunneling technique, in which the Zeeman-split superconducting density of states in the Al electrode is used as a detector for the spin polarization. Thermal robustness of the polarization, which is of key importance for the performance of magnetic tunnel junction devices, is demonstrated for post-deposition anneal temperatures up to 500 o C with Co and Co 90 Fe 10 top electrodes, independent of the presence of an FeMn layer on top of the ferromagnet

  16. Theory for Spin Selective Andreev Re ection in Vortex Core of Topological Superconductor: Majorana Zero Modes on Spherical Surface and Application to Spin Polarized Scanning Tunneling Microscope Probe

    Science.gov (United States)

    Zhang, Fu-Chun; Hu, Lun-Hui; Li, Chuang; Xu, Dong-Hui; Zhou, Yi

    Majorana zero modes (MZMs) have been predicted to exist in the topological insulator (TI)/superconductor (SC) heterostructure. Recent spin polarized scanning tunneling microscope(STM) experiment has observed spin-polarization dependence of the zero bias differential tunneling conductance at the center of vortex core. Here we consider a helical electron system described by a Rashba spin orbit coupling Hamiltonian on a spherical surface with a s-wave superconducting pairing due to proximity effect. We examine in-gap excitations of a pair of vortices with one at the north pole and the other at the south pole. While the MZM is not a spin eigenstate, the spin wavefunction of the MZM at the center of the vortex core, r = 0, is parallel to the magnetic field, and the local Andreev reflection of the MZM is spin selective, namely occurs only when the STM tip has the spin polarization parallel to the magnetic field, similar to the case in 1-dimensional nanowire. The total local differential tunneling conductance consists of the normal term proportional to the local density of states and an additional term arising from the Andreev reflection. We apply our theory to examine the recently reported spin-polarized STM experiments and show good agreement with the experiments

  17. Co on Pt(111) studied by spin-polarized scanning tunneling microscopy and spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Meier, F.K.

    2006-07-01

    In this thesis the electronic properties of the bare Pt(111) surface, the structural, electronic, and magnetic properties of monolayer and double-layer high Co nanostructures as well as the spin-averaged electronic structure of single Co atoms on Pt(111) were studied by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The experiments on the bare Pt(111) surface and on single Co atoms have been performed in an STM facility operating at temperatures of down to 0.3 K and at magnetic fields of up to 14 T under ultra-high vacuum conditions. The facility has been taken into operation within the time period of this thesis and its specifications were tested by STS measurements. These characterization measurements show a very high stability of the tunneling junction and an energy resolution of about 100 {mu}eV, which is close to the thermal limit. The investigation of the electronic structure of the bare Pt(111) surface reveals the existence of an unoccupied surface state. By a comparison of the measured dispersion to first-principles electronic structure calculations the state is assigned to an sp-derived surface band at the lower boundary of the projected bulk band gap. The surface state exhibits a strong spin-orbit coupling induced spin splitting. The close vicinity to the bulk bands leads to a strong linear contribution to the dispersion and thus to a deviant appearance in the density of states in comparison to the surface states of the (111) surfaces of noble metals. A detailed study of Co monolayer and double-layer nanostructures on the Pt(111) surface shows that both kinds of nanostructures exhibit a highly inhomogeneous electronic structure which changes at the scale of only a few Aa due to a strong stacking dependence with respect to the Pt(111) substrate. With the help of first principles calculations the different spectroscopic appearance for Co atoms within the Co monolayer is assigned to a stacking dependent hybridization of Co states

  18. Spin polarization at the interface and tunnel magnetoresistance

    International Nuclear Information System (INIS)

    Itoh, H.; Inoue, J.

    2001-01-01

    We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

  19. Real-space observation of a right-rotating inhomogeneous cycloidal spin spiral by spin-polarized scanning tunneling microscopy in a triple axes vector magnet.

    Science.gov (United States)

    Meckler, S; Mikuszeit, N; Pressler, A; Vedmedenko, E Y; Pietzsch, O; Wiesendanger, R

    2009-10-09

    Using spin-polarized scanning tunneling microscopy performed in a triple axes vector magnet, we show that the magnetic structure of the Fe double layer on W(110) is an inhomogeneous right-rotating cycloidal spin spiral. The magnitude of the Dzyaloshinskii-Moriya vector is extracted from the experimental data using micromagnetic calculations. The result is confirmed by comparison of the measured saturation field along the easy axis to the respective value as obtained from Monte Carlo simulations. We find that the Dzyaloshinskii-Moriya interaction is too weak to destabilize the single domain state. However, it can define the sense of rotation and the cycloidal spiral type once the single domain state is destabilized by dipolar interaction.

  20. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

    Science.gov (United States)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

    2014-04-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  1. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-01-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  2. A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films.

    Science.gov (United States)

    Wang, Kangkang; Lin, Wenzhi; Chinchore, Abhijit V; Liu, Yinghao; Smith, Arthur R

    2011-05-01

    A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve ≤5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn(3)N(2)(010) surfaces.

  3. Spin-Polarization in Quasi-Magnetic Tunnel Junctions

    Science.gov (United States)

    Xie, Zheng-Wei; Li, Ling

    2017-05-01

    Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and 16ZA0047, and the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No 12TD008.

  4. Observation of layered antiferromagnetism in self-assembled parallel NiSi nanowire arrays on Si(110) by spin-polarized scanning tunneling spectromicroscopy

    Science.gov (United States)

    Hong, Ie-Hong; Hsu, Hsin-Zan

    2018-03-01

    The layered antiferromagnetism of parallel nanowire (NW) arrays self-assembled on Si(110) have been observed at room temperature by direct imaging of both the topographies and magnetic domains using spin-polarized scanning tunneling microscopy/spectroscopy (SP-STM/STS). The topographic STM images reveal that the self-assembled unidirectional and parallel NiSi NWs grow into the Si(110) substrate along the [\\bar{1}10] direction (i.e. the endotaxial growth) and exhibit multiple-layer growth. The spatially-resolved SP-STS maps show that these parallel NiSi NWs of different heights produce two opposite magnetic domains, depending on the heights of either even or odd layers in the layer stack of the NiSi NWs. This layer-wise antiferromagnetic structure can be attributed to an antiferromagnetic interlayer exchange coupling between the adjacent layers in the multiple-layer NiSi NW with a B2 (CsCl-type) crystal structure. Such an endotaxial heterostructure of parallel magnetic NiSi NW arrays with a layered antiferromagnetic ordering in Si(110) provides a new and important perspective for the development of novel Si-based spintronic nanodevices.

  5. Spin-polarized inelastic tunneling through insulating barriers.

    Science.gov (United States)

    Lu, Y; Tran, M; Jaffrès, H; Seneor, P; Deranlot, C; Petroff, F; George, J-M; Lépine, B; Ababou, S; Jézéquel, G

    2009-05-01

    Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

  6. Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction

    NARCIS (Netherlands)

    Jansen, R.; Lodder, J.C.

    2000-01-01

    Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared

  7. Spin-polarized tunneling through a ferromagnetic insulator

    NARCIS (Netherlands)

    Kok, M.; Kok, M.; Beukers, J.N.; Brinkman, Alexander

    2009-01-01

    The polarization of the tunnel conductance of spin-selective ferromagnetic insulators is modeled, providing a generalized concept of polarization including both the effects of electrode and barrier polarization. The polarization model is extended to take additional non-spin-polarizing insulating

  8. Spin polarized tunnelling investigation of nanometre Co clusters by means of a Ni bulk tip

    International Nuclear Information System (INIS)

    Rastei, M V; Bucher, J P

    2006-01-01

    A massive Ni tip is used in spin polarized scanning tunnelling microscopy (SP STM) to explore the magnetization state of nanometre Co clusters, self-organized on the Au(111) surface. Constant current STM images taken at 4.6 K show a bimodal distribution of the cluster heights, accounting for the spin polarization of the STM junction. The spin polarization of the tunnel junction as a function of the bias voltage is found to depend on the local density of states of the sample examined. Changing the vacuum barrier parameters by bringing the tip closer to the surface leads to a reduction in the tunnelling magnetoresistance that may be attributed to spin flip effects. (letter to the editor)

  9. Tunneling Spectroscopy Study of Spin-Polarized Quasiparticle Injection Effects in Cuparate/Manganite Heterostructures

    Science.gov (United States)

    Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

    1998-01-01

    Scanning tunneling spectroscopy was performed at 4.2K on epitaxial thin-film heterostructures comprising YBa2Cu3O7 and La0.7Ca0.3MnO3, to study the microscopic effects of spin-polarized quasiparticle injection from the half-metallic ferromagnetic manganite on the high-Tc cuprate superconductor.

  10. Spin-polarized scanning tunneling microscopy experiments on the rough surface of a polycrystalline NiFe film with a fine magnetic tip sensitive to a well-defined magnetization component

    Directory of Open Access Journals (Sweden)

    H. Matsuyama

    2016-03-01

    Full Text Available We developed a micrometer-sized magnetic tip integrated onto the write head of a hard disk drive for spin-polarized scanning tunneling microscopy (SP-STM in the modulated tip magnetization mode. Using SP-STM, we measured a well-defined in-plane spin-component of the tunneling current of the rough surface of a polycrystalline NiFe film. The spin asymmetry of the NiFe film was about 1.3% within the bias voltage range of -3 to 1 V. We obtained the local spin component image of the sample surface, switching the magnetic field of the sample to reverse the sample magnetization during scanning. We also obtained a spin image of the rough surface of a polycrystalline NiFe film evaporated on the recording medium of a hard disk drive.

  11. Probing spin-polarized tunneling at high bias and temperature with a magnetic tunnel transistor

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Min, B.C.; Sanderink, Johannes G.M.; Lodder, J.C.; Jansen, R.

    2005-01-01

    The magnetic tunnel transistor (MTT) is a three terminal hybrid device that consists of a tunnel emitter, a ferromagnetic (FM) base, and a semiconductor collector. In the MTT with a FM emitter and a single FM base, spin-polarized hot electrons are injected into the base by tunneling. After

  12. Spin-polarized magnetic tunnelling magnetoresistive effects in various junctions

    Science.gov (United States)

    Miyazaki, T.; Tezuka, N.; Kumagai, S.; Ando, Y.; Kubota, H.; Murai, J.; Watabe, T.; Yokota, M.

    1998-03-01

    Recent progress concerning spin-polarized magnetic tunnelling effects for (i) trilayer standard ferromagnet (F)/insulator (I)/ferromagnet (F) junctions, (ii) spin-valve-type junctions, (iii) trilayer or multilayer ferromagnet/granular/ferromagnet junctions and (iv) F/I/F junction with a `wedge-geometry' insulator is reviewed. Special emphasis is placed on the dependence of the tunnel magnetoresistance ratio on temperature and also the intensity of the applied voltage. It was found that the resistance for the saturation magnetization state, 0022-3727/31/6/009/img1, and the tunnelling magnetoresistance ratio, TMR, of an 0022-3727/31/6/009/img2 junction decreased rapidly with increasing temperature, whereas those of a 0022-3727/31/6/009/img3 junction were insensitive to temperature. Concerning the bias voltage dependence of 0022-3727/31/6/009/img1 and TMR, the same tendency with temperature was observed for 0022-3727/31/6/009/img2 and 0022-3727/31/6/009/img3 junctions. Spin-valve-type junction exchange biased by a FeMn layer exhibits a relatively large TMR ratio up to about 400 K.

  13. Design and performance of an ultra-high vacuum spin-polarized scanning tunneling microscope operating at 30 mK and in a vector magnetic field

    Science.gov (United States)

    von Allwörden, Henning; Eich, Andreas; Knol, Elze J.; Hermenau, Jan; Sonntag, Andreas; Gerritsen, Jan W.; Wegner, Daniel; Khajetoorians, Alexander A.

    2018-03-01

    We describe the design and performance of a scanning tunneling microscope (STM) that operates at a base temperature of 30 mK in a vector magnetic field. The cryogenics is based on an ultra-high vacuum (UHV) top-loading wet dilution refrigerator that contains a vector magnet allowing for fields up to 9 T perpendicular and 4 T parallel to the sample. The STM is placed in a multi-chamber UHV system, which allows in situ preparation and exchange of samples and tips. The entire system rests on a 150-ton concrete block suspended by pneumatic isolators, which is housed in an acoustically isolated and electromagnetically shielded laboratory optimized for extremely low noise scanning probe measurements. We demonstrate the overall performance by illustrating atomic resolution and quasiparticle interference imaging and detail the vibrational noise of both the laboratory and microscope. We also determine the electron temperature via measurement of the superconducting gap of Re(0001) and illustrate magnetic field-dependent measurements of the spin excitations of individual Fe atoms on Pt(111). Finally, we demonstrate spin resolution by imaging the magnetic structure of the Fe double layer on W(110).

  14. Spin-polarized scanning tunneling microscopy of magnetic nanostructures at the example of bcc-Co/Fe(110), Fe/Mo(110), and copper phthalocyanine/Fe(1110); Spinpolarisierte Rastertunnelmikroskopie magnetischer Nanostrukturen am Beispiel von bcc-Co/Fe(110), Fe/Mo(110) und Kupfer-Phthalocyanin/Fe(110)

    Energy Technology Data Exchange (ETDEWEB)

    Methfessel, Torsten

    2010-12-09

    This thesis provides an introduction into the technique of spin-polarized scanning tunnelling microscopy and spectroscopy as an experimental method for the investigation of magnetic nanostructures. Experimental results for the spin polarized electronic structure depending on the crystal structure of ultrathin Co layers, and depending on the direction of the magnetization for ultrathin Fe layers are presented. High-resolution measurements show the position-dependent spin polarization on a single copper-phthalocyanine molecule deposited on a ferromagnetic surface. Co was deposited by molecular beam epitaxy on the (110) surface of the bodycentered cubic metals Cr and Fe. In contrast to previous reports in the literature only two layers of Co can be stabilized in the body-centered cubic (bcc) structure. The bcc-Co films on the Fe(110) surface show no signs of epitaxial distortions. Thicker layers reconstruct into a closed-packed structure (hcp / fcc). The bcc structure increases the spin-polarization of Co to P=62 % in comparison to hcp-Co (P=45 %). The temperature-dependent spin-reorientation of ultrathin Fe/Mo(110) films was investigated by spin-polarized spectroscopy. A reorientation of the magnetic easy axis from the [110] direction along the surface normal to the in-plane [001] axis is observed at T (13.2{+-}0.5) K. This process can be identified as a discontinuous reorientation transition, revealing two simultaneous minima of the free energy in a certain temperature range. The electronic structure of mono- and double-layer Fe/Mo(110) shows a variation with the reorientation of the magnetic easy axis and with the direction of the magnetization. The investigation of the spin-polarized charge transport through a copper-phthalocyanine molecule on the Fe/Mo(110) surface provides an essential contribution to the understanding of spin-transport at the interface between metal and organic molecule. Due to the interaction with the surface of the metal the HOMO-LUMO energy

  15. Tunnel spin polarization versus energy for clean and doped Al2O3 barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  16. Tunnel Spin Polarization Versus Energy for Clean and Doped Al2O3 Barriers

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

    2007-01-01

    The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

  17. From epitaxial growth of ferrite thin films to spin-polarized tunnelling

    International Nuclear Information System (INIS)

    Moussy, Jean-Baptiste

    2013-01-01

    This paper presents a review of the research which is focused on ferrite thin films for spintronics. First, I will describe the potential of ferrite layers for the generation of spin-polarized currents. In the second step, the structural and chemical properties of epitaxial thin films and ferrite-based tunnel junctions will be presented. Particular attention will be given to ferrite systems grown by oxygen-assisted molecular beam epitaxy. The analysis of the structure and chemistry close to the interfaces, a key-point for understanding the spin-polarized tunnelling measurements, will be detailed. In the third part, the magnetic and magneto-transport properties of magnetite (Fe 3 O 4 ) thin films as a function of structural defects such as the antiphase boundaries will be explained. The spin-polarization measurements (spin-resolved photoemission, tunnel magnetoresistance) on this oxide predicted to be half-metallic will be discussed. Fourth, the potential of magnetic tunnel barriers, such as CoFe 2 O 4 , NiFe 2 O 4 or MnFe 2 O 4 , whose insulating behaviour and the high Curie temperatures make it exciting candidates for spin filtering at room temperature will be described. Spin-polarized tunnelling experiments, involving either Meservey–Tedrow or tunnel magnetoresistance measurements, will reveal significant spin-polarizations of the tunnelling current at low temperatures but also at room temperatures. Finally, I will mention a few perspectives with ferrite-based heterostructures. (topical review)

  18. Antiferromagnetic Spin Coupling between Rare Earth Adatoms and Iron Islands Probed by Spin-Polarized Tunneling.

    Science.gov (United States)

    Coffey, David; Diez-Ferrer, José Luis; Serrate, David; Ciria, Miguel; de la Fuente, César; Arnaudas, José Ignacio

    2015-09-03

    High-density magnetic storage or quantum computing could be achieved using small magnets with large magnetic anisotropy, a requirement that rare-earth iron alloys fulfill in bulk. This compelling property demands a thorough investigation of the magnetism in low dimensional rare-earth iron structures. Here, we report on the magnetic coupling between 4f single atoms and a 3d magnetic nanoisland. Thulium and lutetium adatoms deposited on iron monolayer islands pseudomorphically grown on W(110) have been investigated at low temperature with scanning tunneling microscopy and spectroscopy. The spin-polarized current indicates that both kind of adatoms have in-plane magnetic moments, which couple antiferromagnetically with their underlying iron islands. Our first-principles calculations explain the observed behavior, predicting an antiparallel coupling of the induced 5d electrons magnetic moment of the lanthanides with the 3d magnetic moment of iron, as well as their in-plane orientation, and pointing to a non-contribution of 4f electrons to the spin-polarized tunneling processes in rare earths.

  19. Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Mu Haifeng; Zhu Zhengang; Zheng Qingrong; Jin Biao; Wang Zhengchuan; Su Gang

    2004-01-01

    A recent elegant experimental realization [S. Yuasa et al., Science 297 (2002) 234] of the spin-polarized resonant tunneling in magnetic tunnel junctions is interpreted in terms of a two-band model. It is shown that the tunnel magnetoresistance (TMR) decays oscillatorily with the thickness of the normal metal (NM) layer, being fairly in agreement with the experimental observation. The tunnel conductance is found to decay with slight oscillations with the increase of the NM layer thickness, which is also well consistent with the experiment. In addition, when the magnetizations of both ferromagnet electrodes are not collinearly aligned, TMR is found to exhibit sharp resonant peaks at some particular thickness of the NM layer. The peaked TMR obeys nicely a Gaussian distribution against the relative orientation of the magnetizations

  20. Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

    Science.gov (United States)

    Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

    2017-06-27

    The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

  1. Spin polarization of tunneling current in barriers with spin-orbit coupling.

    Science.gov (United States)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-03-19

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons.

  2. Spin polarization of tunneling current in barriers with spin-orbit coupling

    International Nuclear Information System (INIS)

    Fujita, T; Jalil, M B A; Tan, S G

    2008-01-01

    We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons

  3. Electron-spin polarization in tunnel junctions with ferromagnetic EuS barriers

    International Nuclear Information System (INIS)

    Hao, X.; Moodera, J.S.; Meservey, R.

    1989-01-01

    The authors report here spin-polarized tunneling experiments using non-ferromagnetic electrodes and ferromagnetic EuS barriers. Because of the conduction band in EuS splits into spin-up and spin-down subbands when the temperature is below 16.7 K, the Curie temperature of EuS, the tunnel barrier for electrons with different spin directions is different, therefore giving rise to tunnel current polarization. The spin-filter effect, as it may be called, was observed earlier, directly or indirectly, by several groups: Esaki et al. made a tunneling study on junctions having EuS and EuSe barriers; Thompson et al. studied Schottky barrier tunneling between In and doped EuS; Muller et al. and Kisker et al. performed electron field emission experiments on EuS-coated tungsten tips. The field emission experiments gave a maximum polarization of (89 + 7)% for the emitted electrons. Although the previous tunneling studies did not directly show electron polarization, their results were explained by the same spin- filter effect. This work uses the spin-polarized tunneling technique to show directly that tunnel current is indeed polarized and polarization can be as high as 85%

  4. Effect of Orbital Hybridization on Spin-Polarized Tunneling across Co/C60 Interfaces.

    Science.gov (United States)

    Wang, Kai; Strambini, Elia; Sanderink, Johnny G M; Bolhuis, Thijs; van der Wiel, Wilfred G; de Jong, Michel P

    2016-10-26

    The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C 60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an AlO x tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance (TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C 60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C 60 interface was found to be 43%.

  5. Large positive spin polarization and giant inverse tunneling magnetoresistance in Fe/PbTiO3/Fe multiferroic tunnel junction

    International Nuclear Information System (INIS)

    Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min

    2014-01-01

    We perform first-principles electronic structure and spin-dependent transport calculations of a multiferroic tunnel junction (MFTJ) with an epitaxial Fe/PbTiO 3 /Fe heterostructure. We predict a large positive spin-polarization (SP) and an intriguing giant inverse tunneling magnetoresistance (TMR) ratio in this tunnel junction. We demonstrate that the tunneling properties are determined by ferroelectric (FE) polarization screening and electronic reconstruction at the interface with lower electrostatic potential. The intricate complex band structure of PbTiO 3 , in particular the lowest decay rates concerning Pb 6p z and Ti 3d z2 states near the Γ ¯ point, gives rise to the large positive SP of the tunneling current in the parallel magnetic configuration. However, the giant inverse TMR ratio is attributed to the minority-spin electrons of the interfacial Ti 3d xz +3d yz orbitals which have considerably weight in the extended area around the Γ ¯ point at the Fermi energy and causes remarkable contributions to the conductance in the antiparallel magnetic configuration. - Highlights: • We study spin-dependent tunneling in Fe/PbTiO 3 /Fe multiferroic tunnel junction. • We find a large positive spin polarization in the parallel magnetic configuration. • An intriguing giant inverse TMR ratio (about −2000%) is predicted. • Complex band structure of PbTiO 3 causes the large positive spin polarization. • Negative TMR is due to minority-spin electrons of interfacial Ti d xz +d yz orbitals

  6. Oliver E. Buckley Prize Talk: Spin polarized tunneling and tunnel magnetoresistance -- Learning from the past and moving forward

    Science.gov (United States)

    Moodera, Jagadeesh

    2009-03-01

    Electron tunneling phenomenon has contributed enormously to our understanding of various branches of physics over the years. The technique of spin polarized tunneling (SPT), sensing the spin polarization of tunneling electrons using a superconducting spin detector, discovered by Meservey and Tedrow in the early seventies has been successfully utilized over the years to understand many aspects of magnetism and superconductivity. Electrical spin injection/detection in a semiconductor is strongly believed to succeed through such an approach. The successful observation of a large change in tunnel current in magnetic tunnel junctions (MTJ) in the mid nineties has brought extreme activity in this field -- both from fundamental study as well as extensive application in mind (as sensors, nonvolatile memory devices, logic elements etc). From the early history of this field that led to the discovery of room temperature TMR effect to the observation of many novel phenomena to the exciting recent work on spin filtering, spin transport in semiconductors to toggling of the superconducting state with spin current will be highlighted and reviewed. Work done in collaboration with Drs. Meservey and Tedrow, PhD students, postdoctorals, as well as high school students and undergraduates. NSF, ONR, DARPA and KIST-MIT project funds supported the research over the years.

  7. The tunneling magnetoresistance and spin-polarized optoelectronic properties of graphyne-based molecular magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Yang, Zhi; Ouyang, Bin; Lan, Guoqing; Xu, Li-Chun; Liu, Ruiping; Liu, Xuguang

    2017-01-01

    Using density functional theory and the non-equilibrium Green’s function method, we investigate the spin-dependent transport and optoelectronic properties of the graphyne-based molecular magnetic tunnel junctions (MMTJs). We find that these MMTJs exhibit an outstanding tunneling magnetoresistance (TMR) effect. The TMR value is as high as 10 6 %. When the magnetization directions of two electrodes are antiparallel under positive or negative bias voltages, two kinds of pure spin currents can be obtained in the systems. Furthermore, under the irradiation of infrared, visible or ultraviolet light, spin-polarized photocurrents can be generated in the MMTJs, but the corresponding microscopic mechanisms are different. More importantly, if the magnetization directions of two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents. (paper)

  8. Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

    Energy Technology Data Exchange (ETDEWEB)

    Awan, I. T.; Galvão Gobato, Y. [Departamento de Física, Universidade Federal de São Carlos (UFSCAR) 13560-905, São Carlos, SP (Brazil); Galeti, H. V. A. [Departamento de Engenharia Elétrica, Universidade Federal de São Carlos 13560-905, São Carlos, SP (Brazil); Brasil, M. J. S. P. [Institute of Physics Gleb Wataghin, UNICAMP, Campinas (Brazil); Taylor, D.; Henini, M. [School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

    2014-08-07

    In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼−75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators.

  9. Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

    DEFF Research Database (Denmark)

    Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

    2003-01-01

    Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

  10. Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

    NARCIS (Netherlands)

    Vera Marun, I.J.; Jansen, R.

    2009-01-01

    We describe the fabrication of multiterminal semiconductor/ferromagnet probes for a new technique to study magnetic nanostructures: spin-filter scanning tunneling microscopy. We describe the principle of the technique, which is based on spin-polarized tunneling and subsequent analysis of the spin

  11. Spin-polarized spin excitation spectroscopy

    International Nuclear Information System (INIS)

    Loth, Sebastian; Lutz, Christopher P; Heinrich, Andreas J

    2010-01-01

    We report on the spin dependence of elastic and inelastic electron tunneling through transition metal atoms. Mn, Fe and Cu atoms were deposited onto a monolayer of Cu 2 N on Cu(100) and individually addressed with the probe tip of a scanning tunneling microscope. Electrons tunneling between the tip and the substrate exchange energy and spin angular momentum with the surface-bound magnetic atoms. The conservation of energy during the tunneling process results in a distinct onset threshold voltage above which the tunneling electrons create spin excitations in the Mn and Fe atoms. Here we show that the additional conservation of spin angular momentum leads to different cross-sections for spin excitations depending on the relative alignment of the surface spin and the spin of the tunneling electron. For this purpose, we developed a technique for measuring the same local spin with a spin-polarized and a non-spin-polarized tip by exchanging the last apex atom of the probe tip between different transition metal atoms. We derive a quantitative model describing the observed excitation cross-sections on the basis of an exchange scattering process.

  12. Scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Binnig, G.; Rohrer, H.

    1983-01-01

    Based on vacuum tunneling, a novel type of microscope, the scanning tunneling microscope (STM) was developed. It has an unprecedented resolution in real space on an atomic scale. The authors review the important technical features, illustrate the power of the STM for surface topographies and discuss its potential in other areas of science and technology. (Auth.)

  13. Spin Polarization Inversion at Benzene-Absorbed Fe4N Surface

    KAUST Repository

    Zhang, Qian

    2015-05-27

    We report a first-principle study on electronic structure and simulation of the spin-polarized scanning tunneling microscopy graphic of a benzene/Fe4N interface. Fe4N is a compound ferromagnet suitable for many spintronic applications. We found that, depending on the particular termination schemes and interface configurations, the spin polarization on the benzene surface shows a rich variety of properties ranging from cosine-type oscillation to polarization inversion. Spin-polarization inversion above benzene is resulting from the hybridizations between C pz and the out-of-plane d orbitals of Fe atom.

  14. Ultrafast scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Botkin, D.A. [California Univ., Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley Lab., CA (United States)

    1995-09-01

    I have developed an ultrafast scanning tunneling microscope (USTM) based on uniting stroboscopic methods of ultrafast optics and scanned probe microscopy to obtain nanometer spatial resolution and sub-picosecond temporal resolution. USTM increases the achievable time resolution of a STM by more than 6 orders of magnitude; this should enable exploration of mesoscopic and nanometer size systems on time scales corresponding to the period or decay of fundamental excitations. USTM consists of a photoconductive switch with subpicosecond response time in series with the tip of a STM. An optical pulse from a modelocked laser activates the switch to create a gate for the tunneling current, while a second laser pulse on the sample initiates a dynamic process which affects the tunneling current. By sending a large sequence of identical pulse pairs and measuring the average tunnel current as a function of the relative time delay between the pulses in each pair, one can map the time evolution of the surface process. USTM was used to measure the broadband response of the STM`s atomic size tunnel barrier in frequencies from tens to hundreds of GHz. The USTM signal amplitude decays linearly with the tunnel junction conductance, so the spatial resolution of the time-resolved signal is comparable to that of a conventional STM. Geometrical capacitance of the junction does not appear to play an important role in the measurement, but a capacitive effect intimately related to tunneling contributes to the measured signals and may limit the ultimate resolution of the USTM.

  15. Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor

    Science.gov (United States)

    Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J.; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

    2017-12-01

    We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr2VO3FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C4 (2 ×2 ) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C4 (2 ×2 ) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C4 state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

  16. Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor.

    Science.gov (United States)

    Choi, Seokhwan; Choi, Hyoung Joon; Ok, Jong Mok; Lee, Yeonghoon; Jang, Won-Jun; Lee, Alex Taekyung; Kuk, Young; Lee, SungBin; Heinrich, Andreas J; Cheong, Sang-Wook; Bang, Yunkyu; Johnston, Steven; Kim, Jun Sung; Lee, Jhinhwan

    2017-12-01

    We explore a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single-crystal Sr_{2}VO_{3}FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a nontrivial C_{4} (2×2) order, which cannot be achieved by thermal excitation with an unpolarized current. Our tunneling spectroscopy study shows that the induced C_{4} (2×2) order has characteristics of plaquette antiferromagnetic order in the Fe layer and strongly suppresses superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the C_{4} state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors.

  17. Spin-polarized electron tunneling in bcc FeCo/MgO/FeCo(001) magnetic tunnel junctions.

    Science.gov (United States)

    Bonell, F; Hauet, T; Andrieu, S; Bertran, F; Le Fèvre, P; Calmels, L; Tejeda, A; Montaigne, F; Warot-Fonrose, B; Belhadji, B; Nicolaou, A; Taleb-Ibrahimi, A

    2012-04-27

    In combining spin- and symmetry-resolved photoemission, magnetotransport measurements and ab initio calculations we detangled the electronic states involved in the electronic transport in Fe(1-x)Co(x)(001)/MgO/Fe(1-x)Co(x)(001) magnetic tunnel junctions. Contrary to previous theoretical predictions, we observe a large reduction in TMR (from 530 to 200% at 20 K) for Co content above 25 atomic% as well as anomalies in the conductance curves. We demonstrate that these unexpected behaviors originate from a minority spin state with Δ(1) symmetry that exists below the Fermi level for high Co concentration. Using angle-resolved photoemission, this state is shown to be a two-dimensional state that occurs at both Fe(1-x)Co(x)(001) free surface, and more importantly at the interface with MgO. The combination of this interface state with the peculiar density of empty states due to chemical disorder allows us to describe in details the complex conduction behavior in this system.

  18. Magnetism in grain-boundary phase of a NdFeB sintered magnet studied by spin-polarized scanning electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kohashi, Teruo, E-mail: teruo.kohashi.fc@hitachi.com; Motai, Kumi [Central Research Laboratory, Hitachi, Ltd., Hatoyama, Saitama 350-0395 (Japan); Nishiuchi, Takeshi; Hirosawa, Satoshi [Magnetic Materials Research Laboratory, Hitachi Metals Ltd., Osaka 618-0013 (Japan)

    2014-06-09

    The magnetism in the grain-boundary phase of a NdFeB sintered magnet was measured by spin-polarized scanning electron microscopy (spin SEM). A sample magnet was fractured in the ultra-high-vacuum chamber to avoid oxidation, and its magnetizations in the exposed grain-boundary phase on the fracture surface were evaluated through the spin polarization of secondary electrons. Spin-SEM images were taken as the fracture surface was milled gradually by argon ions, and the magnetization in the grain-boundary phase was quantitatively obtained separately from that of the Nd{sub 2}Fe{sub 14}B phase. The obtained magnetization shows that the grain-boundary phase of this magnet has substantial magnetization, which was confirmed to be ferromagnetic.

  19. The possibility to determine a constant of spin-orbit interaction by scanning tunneling microscopy method

    International Nuclear Information System (INIS)

    Khotkevich, N.V.; Kolesnichenko, Yu.A.; Vovk, N.P.

    2016-01-01

    The electron tunneling from the quasi-two-dimensional (surface) states with the spin-orbit interaction into bulk-mode states is studied in the framework of a model of an infinitely thin inhomogeneous tunnel magnetic barrier. The influence of the scattering of quasi-two-dimensional electrons by a single magnetic defect on the tunnel current is analyzed. Analytic formulas for the conductance of a tunnel point-contact as a function of its distance from the defect are obtained. It is shown that the analysis of the local magnetization density around the defect by means of spin-polarized scanning tunneling microscopy allows finding the constant of spin orbit interaction.

  20. Investigation of non-collinear spin states with scanning tunneling microscopy.

    Science.gov (United States)

    Wulfhekel, W; Gao, C L

    2010-03-05

    Most ferromagnetic and antiferromagnetic substances show a simple collinear arrangement of the local spins. Under certain circumstances, however, the spin configuration is non-collinear. Scanning tunneling microscopy with its potential atomic resolution is an ideal tool for investigating these complex spin structures. Non-collinearity can be due to topological frustration of the exchange interaction, due to relativistic spin-orbit coupling or can be found in excited states. Examples for all three cases are given, illustrating the capabilities of spin-polarized scanning tunneling microscopy.

  1. Scanning Tunneling Microscopy - image interpretation

    International Nuclear Information System (INIS)

    Maca, F.

    1998-01-01

    The basic ideas of image interpretation in Scanning Tunneling Microscopy are presented using simple quantum-mechanical models and supplied with examples of successful application. The importance is stressed of a correct interpretation of this brilliant experimental surface technique

  2. Seismic scanning tunneling macroscope - Theory

    KAUST Repository

    Schuster, Gerard T.

    2012-09-01

    We propose a seismic scanning tunneling macroscope (SSTM) that can detect the presence of sub-wavelength scatterers in the near-field of either the source or the receivers. Analytic formulas for the time reverse mirror (TRM) profile associated with a single scatterer model show that the spatial resolution limit to be, unlike the Abbe limit of λ/2, independent of wavelength and linearly proportional to the source-scatterer separation as long as the point scatterer is in the near-field region; if the sub-wavelength scatterer is a spherical impedance discontinuity then the resolution will also be limited by the radius of the sphere. Therefore, superresolution imaging can be achieved as the scatterer approaches the source. This is analogous to an optical scanning tunneling microscope that has sub-wavelength resolution. Scaled to seismic frequencies, it is theoretically possible to extract 100 Hz information from 20 Hz data by imaging of near-field seismic energy.

  3. Dynamic nuclear spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Stuhrmann, H.B. [GKSS-Forschungszentrum Geesthacht GmbH (Germany)

    1996-11-01

    Polarized neutron scattering from dynamic polarized targets has been applied to various hydrogenous materials at different laboratories. In situ structures of macromolecular components have been determined by nuclear spin contrast variation with an unprecedented precision. The experiments of selective nuclear spin depolarisation not only opened a new dimension to structural studies but also revealed phenomena related to propagation of nuclear spin polarization and the interplay of nuclear polarisation with the electronic spin system. The observation of electron spin label dependent nuclear spin polarisation domains by NMR and polarized neutron scattering opens a way to generalize the method of nuclear spin contrast variation and most importantly it avoids precontrasting by specific deuteration. It also likely might tell us more about the mechanism of dynamic nuclear spin polarisation. (author) 4 figs., refs.

  4. Tetrairon(III) Single Molecule Magnet Studied by Scanning Tunneling Microscopy and Spectroscopy

    Science.gov (United States)

    Oh, Youngtek; Jeong, Hogyun; Lee, Minjun; Kwon, Jeonghoon; Yu, Jaejun; Mamun, Shariful Islam; Gupta, Gajendra; Kim, Jinkwon; Kuk, Young

    2011-03-01

    Tetrairon(III) single-molecule magnet (SMM) on a clean Au(111) has studied using scanning tunneling microscopy (STM) and spectroscopy (STS) to understand quantum mechanical tunneling of magnetization and hysteresis of pure molecular origin. Before the STM studies, elemental analysis, proton nuclear magnetic resonance (NMR) measurement and Energy Dispersive X- ray Spectroscopy (EDS) were carried out to check the robustness of the sample. The STM image of this molecule shows a hexagonal shape, with a phenyl ring at the center and surrounding six dipivaloylmethane ligands. Two peaks are observed at 0.5 eV, 1.5 eV in the STS results, agreeing well with the first principles calculations. Spin-polarized scanning tunneling microscopy (SPSTM) measurements have been performed with a magnetic tip to get the magnetization image of the SMM. We could observe the antiferromagnetic coupling and a centered- triangular topology with six alkoxo bridges inside the molecule while applying external magnetic fields.

  5. Time-resolved scanning tunnelling microscopy

    NARCIS (Netherlands)

    van Houselt, Arie; Zandvliet, Henricus J.W.

    2010-01-01

    Scanning tunneling microscopy has revolutionized our ability to image, study, and manipulate solid surfaces on the size scale of atoms. One important limitation of the scanning tunneling microscope (STM) is, however, its poor time resolution. Recording a standard image with a STM typically takes

  6. Spin-polarized current generated by magneto-electrical gating

    International Nuclear Information System (INIS)

    Ma Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Ghee

    2012-01-01

    We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa. - Highlights: ► The spin polarized transport through a single electron tunneling transistor is systematically studied. ► The study is based on Keldysh non-equilibrium Green's function and equation of motion method. ► A fully spin polarized current is observed. ► We propose to reverse current polarization by the means of gate voltage modulation. ► This device can be used as a bi-polarization current generator.

  7. Thermovoltages in vacuum tunneling investigated by scanning tunneling microscopy

    OpenAIRE

    Hoffmann, D. H.; Rettenberger, Armin; Grand, Jean Yves; Läuger, K.; Leiderer, Paul; Dransfeld, Klaus; Möller, Rolf

    1995-01-01

    By heating the tunneling tip of a scanning tunneling microscope the thermoelectric properties of a variable vacuum barrier have been investigated. The lateral variation of the observed thermovoltage will be discussed for polycrystalline gold, stepped surfaces of silver, as well as for copper islands on silver.

  8. Fiber coupled ultrafast scanning tunneling microscope

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1997-01-01

    We report on a scanning tunneling microscope with a photoconductive gate in the tunneling current circuit. The tunneling tip is attached to a coplanar transmission line with an integrated photoconductive switch. The switch is illuminated through a fiber which is rigidly attached to the switch...... waveguide. The measurements show that the probe works as a transient voltage detector in contact and a capacitively coupled transient field detector in tunneling mode. We do not measure the transient voltage change in the ohmic tunneling current. In this sense, the spatial resolution for propagating...

  9. Sensing Noncollinear Magnetism at the Atomic Scale Combining Magnetic Exchange and Spin-Polarized Imaging.

    Science.gov (United States)

    Hauptmann, Nadine; Gerritsen, Jan W; Wegner, Daniel; Khajetoorians, Alexander A

    2017-09-13

    Storing and accessing information in atomic-scale magnets requires magnetic imaging techniques with single-atom resolution. Here, we show simultaneous detection of the spin-polarization and exchange force with or without the flow of current with a new method, which combines scanning tunneling microscopy and noncontact atomic force microscopy. To demonstrate the application of this new method, we characterize the prototypical nanoskyrmion lattice formed on a monolayer of Fe/Ir(111). We resolve the square magnetic lattice by employing magnetic exchange force microscopy, demonstrating its applicability to noncollinear magnetic structures for the first time. Utilizing distance-dependent force and current spectroscopy, we quantify the exchange forces in comparison to the spin-polarization. For strongly spin-polarized tips, we distinguish different signs of the exchange force that we suggest arises from a change in exchange mechanisms between the probe and a skyrmion. This new approach may enable both nonperturbative readout combined with writing by current-driven reversal of atomic-scale magnets.

  10. Comparison of Electron Transmittance and Tunneling Current through a Trapezoidal Potential Barrier with Spin Polarization Consideration by using Analytical and Numerical Approaches

    Science.gov (United States)

    Nabila, Ezra; Noor, Fatimah A.; Khairurrijal

    2017-07-01

    In this study, we report an analytical calculation of electron transmittance and polarized tunneling current in a single barrier heterostructure of a metal-GaSb-metal by considering the Dresselhaus spin orbit effect. Exponential function, WKB method and Airy function were used in calculating the electron transmittance and tunneling current. A Transfer Matrix Method, as a numerical method, was utilized as the benchmark to evaluate the analytical calculation. It was found that the transmittances calculated under exponential function and Airy function is the same as that calculated under TMM method at low electron energy. However, at high electron energy only the transmittance calculated under Airy function approach is the same as that calculated under TMM method. It was also shown that the transmittances both of spin-up and spin-down conditions increase as the electron energy increases for low energies. Furthermore, the tunneling current decreases with increasing the barrier width.

  11. A Student-Built Scanning Tunneling Microscope

    Science.gov (United States)

    Ekkens, Tom

    2015-01-01

    Many introductory and nanotechnology textbooks discuss the operation of various microscopes including atomic force (AFM), scanning tunneling (STM), and scanning electron microscopes (SEM). In a nanotechnology laboratory class, students frequently utilize microscopes to obtain data without a thought about the detailed operation of the tool itself.…

  12. Spin polarized Auger electron spectroscopy of Fe and Ni

    Science.gov (United States)

    Anilturk, O. S.; Koymen, A. R.

    2001-06-01

    Surface sensitive experiments, in which the spin-polarized electrons are involved, play an important role for magnetic characterization, since the spin-polarized electrons are fingerprints for the local magnetization. Scanning electron microscope with polarization analysis (SEMPA) is one of the most powerful tools to investigate the surface magnetic domain structure of magnetic materials. On the other hand, at energies high enough to generate a two-hole final state arising from Auger transitions, it is possible to observe the spin polarization of the Auger electrons. These electrons reveal element-specific local magnetic information, particularly valuable for surface magnetic studies with composite systems. By using the uniqueness of the UTA-SEMPA tool, one can obtain the magnetic domain picture and also perform spin-polarized Auger electron spectroscopy studies by probing a single domain at the surface. In this study, precisely knowing the probed domain, spin polarization of electrons from super Coster-Kronig MMM Auger emissions on Fe and Ni samples have been investigated. The polarization enhancement above the 3p(M23) threshold is observed on both samples.

  13. Spin polarized Auger electron spectroscopy of Fe and Ni

    International Nuclear Information System (INIS)

    Anilturk, O. S.; Koymen, A. R.

    2001-01-01

    Surface sensitive experiments, in which the spin-polarized electrons are involved, play an important role for magnetic characterization, since the spin-polarized electrons are fingerprints for the local magnetization. Scanning electron microscope with polarization analysis (SEMPA) is one of the most powerful tools to investigate the surface magnetic domain structure of magnetic materials. On the other hand, at energies high enough to generate a two-hole final state arising from Auger transitions, it is possible to observe the spin polarization of the Auger electrons. These electrons reveal element-specific local magnetic information, particularly valuable for surface magnetic studies with composite systems. By using the uniqueness of the UTA-SEMPA tool, one can obtain the magnetic domain picture and also perform spin-polarized Auger electron spectroscopy studies by probing a single domain at the surface. In this study, precisely knowing the probed domain, spin polarization of electrons from super Coster - Kronig MMM Auger emissions on Fe and Ni samples have been investigated. The polarization enhancement above the 3p(M 23 ) threshold is observed on both samples. [copyright] 2001 American Institute of Physics

  14. Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

    Science.gov (United States)

    Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

    2012-11-01

    Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.

  15. Scanning tunneling microscope assembly, reactor, and system

    Science.gov (United States)

    Tao, Feng; Salmeron, Miquel; Somorjai, Gabor A

    2014-11-18

    An embodiment of a scanning tunneling microscope (STM) reactor includes a pressure vessel, an STM assembly, and three spring coupling objects. The pressure vessel includes a sealable port, an interior, and an exterior. An embodiment of an STM system includes a vacuum chamber, an STM reactor, and three springs. The three springs couple the STM reactor to the vacuum chamber and are operable to suspend the scanning tunneling microscope reactor within the interior of the vacuum chamber during operation of the STM reactor. An embodiment of an STM assembly includes a coarse displacement arrangement, a piezoelectric fine displacement scanning tube coupled to the coarse displacement arrangement, and a receiver. The piezoelectric fine displacement scanning tube is coupled to the coarse displacement arrangement. The receiver is coupled to the piezoelectric scanning tube and is operable to receive a tip holder, and the tip holder is operable to receive a tip.

  16. Nuclear spin polarization of targets

    International Nuclear Information System (INIS)

    Happer, W.

    1990-01-01

    Lasers can be used to produce milligrams to grams of noble gas nuclei with spin polarizations in excess of 50%. These quantities are sufficient to be very useful targets in nuclear physics experiments. Alkali-metal atoms are used to capture the angular momentum of circularly polarized laser photons, and the alkali-metal atoms transfer their angular momentum to noble gas atoms in binary or three-body collisions. Non-radiative collisions between the excited alkali atoms and molecular quenching gases are essential to avoid radiation trapping. The spin exchange can involve gas-phase van der Waals molecules, consisting of a noble gas atom and an alkali metal atom. Surface chemistry is also of great importance in determining the wall-induced relaxation rates of the noble gases

  17. Scanning tunneling microscopy II further applications and related scanning techniques

    CERN Document Server

    Güntherodt, Hans-Joachim

    1995-01-01

    Scanning Tunneling Microscopy II, like its predecessor, presents detailed and comprehensive accounts of the basic principles and broad range of applications of STM and related scanning probe techniques. The applications discussed in this volume come predominantly from the fields of electrochemistry and biology. In contrast to those described in STM I, these studies may be performed in air and in liquids. The extensions of the basic technique to map other interactions are described in chapters on scanning force microscopy, magnetic force microscopy, and scanning near-field optical microscopy, together with a survey of other related techniques. Also described here is the use of a scanning proximal probe for surface modification. Together, the two volumes give a comprehensive account of experimental aspects of STM. They provide essential reading and reference material for all students and researchers involved in this field. In this second edition the text has been updated and new methods are discussed.

  18. Scanning tunneling microscopy II further applications and related scanning techniques

    CERN Document Server

    Güntherodt, Hans-Joachim

    1992-01-01

    Scanning Tunneling Microscopy II, like its predecessor, presents detailed and comprehensive accounts of the basic principles and broad range of applications of STM and related scanning probe techniques. The applications discussed in this volume come predominantly from the fields of electrochemistry and biology. In contrast to those described in Vol. I, these sudies may be performed in air and in liquids. The extensions of the basic technique to map other interactions are described inchapters on scanning force microscopy, magnetic force microscopy, scanning near-field optical microscopy, together with a survey of other related techniques. Also described here is the use of a scanning proximal probe for surface modification. Togehter, the two volumes give a comprehensive account of experimental aspcets of STM. They provide essentialreading and reference material for all students and researchers involvedin this field.

  19. New materials research for high spin polarized current

    International Nuclear Information System (INIS)

    Tezuka, Nobuki

    2012-01-01

    The author reports here a thorough investigation of structural and magnetic properties of Co 2 FeAl 0.5 Si 0.5 Heusler alloy films, and the tunnel magnetoresistance effect for junctions with Co 2 FeAl 0.5 Si 0.5 electrodes, spin injection into GaAs semiconductor from Co 2 FeAl 0.5 Si 0.5 , and spin filtering phenomena for junctions with CoFe 2 O 4 ferrite barrier. It was observed that tunnel magnetoresistance ratio up to 832%(386%) at 9 K (room temperature), which corresponds to the tunnel spin polarization of 0.90 (0.81) for the junctions using Co 2 FeAl 0.5 Si 0.5 Heusler electrodes by optimizing the fabrication condition. It was also found that the tunnel magnetoresistance ratio are almost the same between the junctions with Co 2 FeAl 0.5 Si 0.5 Heusler electrodes on Cr buffered (1 0 0) and (1 1 0) MgO substrates, which indicates that tunnel spin polarization of Co 2 FeAl 0.5 Si 0.5 for these two direction are almost the same. The next part of this paper is a spin filtering effect using a Co ferrite. The spin filtering effect was observed through a thin Co-ferrite barrier. The inverse type tunnel magnetoresistance ratio of −124% measured at 10 K was obtained. The inverse type magnetoresistance suggests the negative spin polarization of Co-ferrite barrier. The magnetoresistance ratio of −124% corresponds to the spin polarization of −0.77 by the Co-ferrite barrier. The last part is devoted to the spin injection from Co 2 FeAl 0.5 Si 0.5 into GaAs. The spin injection signal was clearly obtained by three terminal Hanle measurement. The spin relaxation time was estimated to be 380 ps measured at 5 K.

  20. Scanning Tunneling Optical Resonance Microscopy Developed

    Science.gov (United States)

    Bailey, Sheila G.; Raffaelle, Ryne P.; Lau, Janis E.; Jenkins, Phillip P.; Castro, Stephanie L.; Tin, Padetha; Wilt, David M.; Pal, Anna Maria; Fahey, Stephen D.

    2004-01-01

    The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy, or STORM, can interrogate the optical bandgap as a function of its position within a semiconductor micro-structure. This technique uses a tunable solidstate titanium-sapphire laser whose output is "chopped" using a spatial light modulator and is coupled by a fiber-optic connector to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor-phase epitaxy. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy and photoluminescence and with the theoretical values that were based on x-ray diffraction results.

  1. PREFACE: Time-resolved scanning tunnelling microscopy Time-resolved scanning tunnelling microscopy

    Science.gov (United States)

    Zandvliet, Harold J. W.; Lin, Nian

    2010-07-01

    Scanning tunnelling microscopy has revolutionized our ability to image, manipulate, and investigate solid surfaces on the length scale of individual atoms and molecules. The strength of this technique lies in its imaging capabilities, since for many scientists 'seeing is believing'. However, scanning tunnelling microscopy also suffers from a severe limitation, namely its poor time resolution. Recording a scanning tunnelling microscopy image typically requires a few tens of seconds for a conventional scanning tunnelling microscope to a fraction of a second for a specially designed fast scanning tunnelling microscope. Designing and building such a fast scanning tunnelling microscope is a formidable task in itself and therefore, only a limited number of these microscopes have been built [1]. There is, however, another alternative route to significantly enhance the time resolution of a scanning tunnelling microscope. In this alternative method, the tunnelling current is measured as a function of time with the feedback loop switched off. The time resolution is determined by the bandwidth of the IV converter rather than the cut-off frequency of the feedback electronics. Such an approach requires a stable microscope and goes, of course, at the expense of spatial information. In this issue, we have collected a set of papers that gives an impression of the current status of this rapidly emerging field [2]. One of the very first attempts to extract information from tunnel current fluctuations was reported by Tringides' group in the mid-1990s [3]. They showed that the collective diffusion coefficient can be extracted from the autocorrelation of the time-dependent tunnelling current fluctuations produced by atom motion in and out of the tunnelling junction. In general, current-time traces provide direct information on switching/conformation rates and distributions of residence times. In the case where these processes are thermally induced it is rather straightforward to map

  2. Scanning tunneling spectroscopy study of DNA conductivity

    Czech Academy of Sciences Publication Activity Database

    Kratochvílová, Irena; Král, Karel; Bunček, M.; Nešpůrek, Stanislav; Todorciuc, Tatiana; Weiter, M.; Navrátil, J.; Schneider, Bohdan; Pavluch, J.

    2008-01-01

    Roč. 6, č. 3 (2008), s. 422-426 ISSN 1895-1082 R&D Projects: GA AV ČR KAN401770651; GA MŠk OC 137; GA AV ČR KAN400720701; GA AV ČR KAN200100801 Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z40500505; CEZ:AV0Z40550506 Keywords : molecular electronics * DNA * scanning tunneling microscopy * conductivity * charge carrier transport Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.448, year: 2008

  3. Dimensionality effects on spin-polarized quantum beats in ferromagnetic hosts with a pair of side-coupled impurities

    Energy Technology Data Exchange (ETDEWEB)

    Guessi, L.H.; Leandro, S.C.; Seridonio, A.C.; Siqueira, E.C. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Ilha Solteira, SP (Brazil). Dept. de Fisico Quimica; Souza, F.M.; Vernek, E. [Universidade Federal de Uberlandia (UFU), MG (Brazil). Inst. de Fisica; Yoshida, M. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Rio Claro, SP (Brazil); Figueira, M.S. [Universidade Federal Fluminense (UFF), Niteroi, RJ (Brazil). Inst. de Fisica

    2012-07-01

    Full text: In this work, we report a theoretical description of the differential conductance in the low bias regime, for a normal scanning tunneling microscope (STM) probe in the presence of ferromagnetic (FM) hosts with impurities. The hosts are treated as a spin-polarized electron gas hybridized to a pair of side-coupled impurities. Two setups of different dimensionalities are considered, a quantum wire (QW) and a metallic surface (MS). In order to deal with the non-interacting and the Coulomb blockade regimes of these systems, the analysis is done in the framework of the two-impurity Anderson model (TIAM) in combination with the equation of motion (EOM) approach for the Hamiltonian Green functions (GFs). The Fano effect appears in such setups, due to the quantum interference between the transport channels composed by the spin-polarized conduction bands and the electron tunneling into (or out of) the impurities. Thus the conductance of the STM reveals as a function of the probe position, a Fano interference strong dependent on the host dimensionality. It leads to the emergence of spin-polarized quantum beats in the Friedel oscillations for the conductance signal, which are uniform in the QW system in opposite to those found in the MS case, characterized by a long-range damped behavior. We remark that, the energy levels of the impurities and the Coulomb repulsion, modulate these beats. As a result, they establish a scenario where the interplay between the Coulomb blockade and the ferromagnetism of a metallic environment, can be useful for future quantum computation devices. (author)

  4. Control circuit for a scanning tunneling microscope

    Science.gov (United States)

    Munoz, Raúl C.; Villagra, Paolo; Kremer, Germán; Moraga, Luis; Vidal, Guillermo

    1998-09-01

    We have successfully built and tested a circuit designed to control a piezoelectric tube scanner having the standard single inner-electrode quartered outer-electrode configuration, using digital-to-analog (D/A) converters commercially available. To avoid noise associated with the PC, the signals transmitted by the D/A channels to the control electronics are received by instrumentation amplifiers INA 105 at the control circuit, providing 86 dB common mode rejection, thereby over four orders of magnitude of immunity to common mode noise. To prevent ground loops in the communication between the control electronics and the analog-to-digital (A/D) converters, a novel approach was used. The signals sent by the control electronics to the A/D converters were transmitted via isolation amplifiers ISO 122 followed by a 10 kHz Sallen-Key low pass filter incorporated at each output of the control circuit, providing galvanic isolation between the control electronics and the PC, thereby eliminating ground loops. The control circuit was designed to allow analog as well as digital feedback, selectable via a toggle switch. The design also incorporates the possibility of using two independent external signals to modulate the polarization of the sample and two independent external signals to modulate the piezoelectric transducer drive along the Z direction. It also incorporates the possibility of electronically canceling the slope that might occur while scanning due to the sample being tilted along the X axis (fast scan direction) and/or along the Y axis (slow scan direction). The circuit was tested using two 12 bit A/D-D/A converters DAS 1602 to control the scanner of a scanning tunneling microscope, with a home-built scanning head, electrometer, and preamplifier. With the complete system in operation but in the absence of tunneling current, the electrometer exhibits a current noise under 3 pA rms and a response time of 30 μs to a step input current, a performance that compares well

  5. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  6. Optical pumping production of spin polarized hydrogen

    International Nuclear Information System (INIS)

    Knize, R.J.; Happer, W.; Cecchi, J.L.

    1984-01-01

    There has been much interest recently in the production of large quantities of spin polarized hydrogen in various fields including controlled fusion, quantum fluids, high energy, and nuclear physics. One promising method for the development of large quantities of spin polarized hydrogen is the utilization of optical pumping with a laser. Optical pumping is a process where photon angular momentum is converted into electron and nuclear spin. The advent of tunable CW dye lasers (approx. 1 watt) allow the production of greater than 10 18 polarized atoms/sec. We have begun a program at Princeton to investigate the physics and technology of using optical pumping to produce large quantities of spin polarized hydrogen. Initial experiments have been done in small closed glass cells. Eventually, a flowing system, open target, or polarized ion source could be constructed

  7. Transient charging and discharging of spin-polarized electrons in a quantum dot

    DEFF Research Database (Denmark)

    De Souza, Fabricio; Leao, S.A.; Gester, R. M.

    2007-01-01

    We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents, occupations, spin accumulation, and tunneling magnetoresistance TMR are calculated using both nonequilibrium Green...

  8. Measuring voltage transients with an ultrafast scanning tunneling microscope

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1997-01-01

    We use an ultrafast scanning tunneling microscope to resolve propagating voltage transients in space and time. We demonstrate that the previously observed dependence of the transient signal amplitude on the tunneling resistance was only caused by the electrical sampling circuit. With a modified c......-gating photoconductive switch with a rigidly attached fiber, the probe is scanned without changing the probe characteristics. (C) 1997 American Institute of Physics.......We use an ultrafast scanning tunneling microscope to resolve propagating voltage transients in space and time. We demonstrate that the previously observed dependence of the transient signal amplitude on the tunneling resistance was only caused by the electrical sampling circuit. With a modified...... circuit, where the tunneling tip is directly connected to the current amplifier of the scanning tunneling microscope, this dependence is eliminated. Ail results can be explained with coupling through the geometrical capacitance of the tip-electrode junction. By illuminating the current...

  9. Magnetoresistance through spin-polarized p states

    International Nuclear Information System (INIS)

    Papanikolaou, Nikos

    2003-01-01

    We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic, electronic structure calculations. In particular we investigate the role of defects in the contact region with the aim of explaining the recently observed spectacular magnetoresistance ratio. Our results predict that the possible presence of spin-polarized oxygen in the contact region could explain conductance changes by an order of magnitude. Electronic transport essentially occurs through spin-polarized oxygen p states, and this mechanism gives a much higher magnetoresistance than that obtained assuming clean atomically sharp domain walls alone

  10. Small-size low-temperature scanning tunnel microscope

    International Nuclear Information System (INIS)

    Al'tfeder, I.B.; Khajkin, M.S.

    1989-01-01

    A small-size scanning tunnel microscope, designed for operation in transport helium-filled Dewar flasks is described. The microscope design contains a device moving the pin to the tested sample surface and a piezoelectric fine positioning device. High vibration protection of the microscope is provided by its suspension using silk threads. The small-size scanning tunnel microscope provides for atomic resolution

  11. Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure

    International Nuclear Information System (INIS)

    Peter, A. John; Lee, Chang Woo

    2012-01-01

    Photo-induced spin dependent electron transmission through a narrow gap InSb/InGa x Sb 1−x semiconductor symmetric well is theoretically studied using transfer matrix formulism. The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium. Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed. Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration

  12. EDITORIAL: Three decades of scanning tunnelling microscopy that changed the course of surface science Three decades of scanning tunnelling microscopy that changed the course of surface science

    Science.gov (United States)

    Ramachandra Rao, M. S.; Margaritondo, Giorgio

    2011-11-01

    envisaged. AFM observations of thin-film surfaces give us a picture of surface topography and morphology and any visible defects. The growing importance of ultra-thin films for magnetic recording in hard disk drive systems requires an in-depth understanding of the fundamental mechanisms occurring during growth. This special issue of Journal of Physics D: Applied Physics covers all of the different aspects of SPM that illustrate the achievements of this methodology: nanoscale imaging and mapping (Chiang, and Douillard and Charra), piezoresponse force microscopy (Soergel) and STM engineering (Okuyama and Hamada, and Huang et al). Chiang takes the reader on a journey along the STM imaging of atoms and molecules on surfaces. Jesse and Kalinin explore the band excitations that occur during the corresponding processes. Jia et al propose STM and molecular beam epitaxy as a winning experimental combination at the interface of science and technology. Douillard and Charra describe the high-resolution mapping of plasmonic modes using photoemission and scanning tunnelling microscopy. Cricenti et al demonstrate the importance of SPM in material science and biology. Wiebe et al have probed atomic scale magnetism, revealed by spin polarized scanning tunnelling microscopy. In addition, Simon et al present Fourier transform scanning tunnelling spectroscopy and the possibility to obtain constant energy maps and band dispersion using local measurements. Lackinger and Heckl give a perspective of the use of STM to study covalent intermolecular coupling reactions on surfaces. Okuyama and Hamada investigated hydrogen bond imaging and engineering with STM. Soergel describes the study of substrate-dependent self-assembled CuPc molecules using piezo force microscope (PFM). We are very grateful to the authors and reviewers for the papers in this special issue of Journal of Physics D: Applied Physics. Their contributions have provided a comprehensive picture of the evolution, status and potential of

  13. Ultrafast terahertz scanning tunneling microscopy with atomic resolution

    DEFF Research Database (Denmark)

    Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

    2016-01-01

    We demonstrate that ultrafast terahertz scanning tunneling microscopy (THz-STM) can probe single atoms on a silicon surface with simultaneous sub-nanometer and sub-picosecond spatio-temporal resolution. THz-STM is established as a new technique for exploring high-field non-equilibrium tunneling...

  14. Single-atom contacts with a scanning tunnelling microscope

    International Nuclear Information System (INIS)

    Kroeger, J; Neel, N; Sperl, A; Wang, Y F; Berndt, R

    2009-01-01

    The tip of a cryogenic scanning tunnelling microscope is used to controllably contact single atoms adsorbed on metal surfaces. The transition between tunnelling and contact is gradual for silver, while contact to adsorbed gold atoms is abrupt. The single-atom junctions are stable and enable spectroscopic measurements of, e.g., the Abrikosov-Suhl resonance of single Kondo impurities.

  15. Spin-polarized deuterium in magnetic traps

    International Nuclear Information System (INIS)

    Koelman, J.M.V.A.; Stoof, H.T.C.; Verhaar, B.J.; Walraven, J.T.M.

    1987-01-01

    We have calculated the spin-exchange two-body rate constants associated with the population dynamics of the hyperfine levels of atomic deuterium as a function of magnetic field in the Boltzmann zero-temperature limit. Results indicate that a gas of low-field--seeking deuterium atoms trapped in a static magnetic field minimum decays rapidly into an ultrastable gas of doubly spin-polarized deuterium. We also discuss the temperature dependence of various effects

  16. Theory of high-resolution tunneling spin transport on a magnetic skyrmion

    OpenAIRE

    Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

    2018-01-01

    Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport v...

  17. Transient measurements with an ultrafast scanning tunneling microscope

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1998-01-01

    We use a photoconductively gated ultrafast scanning tunneling microscope to resolve laser-induced transients on transmission lines and photoconductors. The photoconductive switch on the tunneling probe is illuminated through a rigidly attached fiber. The use of the fiber enables us to scan across...... the transmission line while the change in delay time between pump beam (on the sample) and probe beam (on the probe) provides the temporal information. The investigated photoconductor sample is a low-temperature-grown GaAs layer placed on a sapphire substrate with a thin, semitransparent gold layer. In tunneling...... mode the probe is sensitive to laser-induced field changes in the semiconductor layer. Laser-induced transient signals of 2.2 ps widths are detected. As for the transmission lines, the signals can be explained by a capacitive coupling across the tunneling gap....

  18. Magnetic Switching of a Single Molecular Magnet due to Spin-Polarized Current

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2006-01-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic electrodes is investigated theoretically. Magnetic moments of the electrodes are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through a barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system as well as the spin relaxation times of the SMM are calculated f...

  19. Scanning tunneling spectroscopy on electron-boson interactions in superconductors

    CERN Document Server

    Schackert, Michael Peter

    2015-01-01

    This work describes the experimental study of electron-boson interactions in superconductors by means of inelastic electron tunneling spectroscopy performed with a scanning tunneling microscope (STM) at temperatures below 1 K. This new approach allows the direct measurement of the Eliashberg function of conventional superconductors as demonstrated on lead (Pb) and niobium (Nb). Preparative experiments on unconventional iron-pnictides are presented in the end.

  20. Construction of a sub-Kelvin ultrahigh vacuum scanning tunneling microscope in high magnetic field

    Science.gov (United States)

    Ham, Ungdon

    A sub-Kelvin ultrahigh vacuum (UHV) scanning tunneling microscope (STM) high magnetic field has been designed and constructed, and has been tested at ˜ 1K and in high magnetic field up to 9 teslas. A four-chamber ultrahigh vacuum system creates reliable environment for tip and sample preparation, surface characterization, and exchanging samples, tips, and evaporating materials. The pressure of chambers is in the low 10 -11 torr range. Various metal atoms and organic molecules can be deposited at room or low temperatures by home-made evaporators. The whole system is mounted on a custom vibration isolation table. A bottom loading ultrahigh vacuum compatible helium-3 cryostat with 9 tesla superconducting magnet is mounted above the vacuum chambers. The Besocke type scanner is modified to meet the requirements of sub-Kelvin temperature and high magnetic field. The scanner is mounted at the bottom of the cryostat insert, which is driven by a bellows type linear translator. The scanner is at the center of the superconducting magnet for measurements at sub-Kelvin temperatures in high magnetic field. With the scanner at the bottom 25 K position, tips and samples can be exchanged. The cryostat has two separate helium-4 reservoirs for the non-bakeable NbTi superconducting magnet and UHV space. The inner liquid helium reservoir provides a low radiation heat leak to the scanner at sub-Kelvin temperatures. Two layers of aluminum shields make use of the enthalpy of the cold He-4 vapor for radiation shielding. Detachable 25 K thermal anchoring to the STM scanner cools down the STM scanner very effectively. With 15 ml liquid helium-3, a holding time of more than 50 hours at 0.4 K base temperature was obtained, and it will be increased some more with new modifications. Combined manipulating single atoms and molecules to make artificial nanometer size structures, with high resolution spectroscopy techniques of high resolution inelastic tunneling spectroscopy and spin-polarized

  1. Probing superconductors. Spectroscopic-imaging scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Hanaguri, Tetsuo

    2011-01-01

    Discovery of high-temperature superconductivity in a cuprate triggered developments of various spectroscopic tools which have been utilized to elucidate electronic states of this mysterious compound. Particularly, angle-resolved photoemission spectroscopy and scanning-tunneling microscopy/spectroscopy are improved considerably. It is now possible to map the superconducting gap in both momentum and real spaces using these two techniques. Here we review spectroscopic-imaging scanning tunneling microscopy which is able to explore momentum-space phase structure of the superconducting gap, as well as real-space structure. Applications of this technique to a cuprate and an iron-based superconductor are discussed. (author)

  2. Electron spin injection from a regrown Fe layer in a spin-polarized vertical-cavity surface-emitting laser

    Science.gov (United States)

    Holub, M.; Bhattacharya, P.; Shin, J.; Saha, D.

    2007-04-01

    An electroluminescence circular polarization of 23% and threshold current reduction of 11% are obtained in an electrically pumped spin-polarized vertical-cavity surface-emitting laser. Electron spin injection is accomplished utilizing a regrown Fe/ n-AlGaAs Schottky tunnel barrier deposited around the base of the laser mesas. Negligible circular polarizations and threshold current reductions are measured for nonmagnetic and Fe-based control VCSELs, which provides convincing evidence of spin injection, transport, and detection in our spin-polarized laser.

  3. The use of splines to analyze scanning tunneling microscopy data

    NARCIS (Netherlands)

    Wormeester, Herbert; Kip, Gerhardus A.M.; Sasse, A.G.B.M.; van Midden, H.J.P.

    1990-01-01

    Scanning tunneling microscopy (STM) requires a two‐dimensional (2D) image displaying technique for its interpretation. The flexibility and global approximation properties of splines, characteristic of a solid data reduction method as known from cubic spline interpolation, is called for. Splines were

  4. Oxygen-free in situ scanning tunnelling microscopy

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Ulstrup, Jens

    2007-01-01

    Scanning tunneling microscopy under full electrochemical potential control (in situ STM) has been used extensively as an efficient method to characterize microstructures at solid/liquid interfaces at the atomic and molecular levels. However, under ambient conditions oxygen may interfere in open...

  5. New approach towards imaging λ-DNA using scanning tunneling ...

    Indian Academy of Sciences (India)

    Wintec

    Abstract. A new methodology to anchor λ-DNA to silanized n-Si(111) surface using Langmuir Blodget trough was developed. The n-Si (111) was silanized by treating it with low molecular weight octyltrichlorosi- lane in toluene. Scanning tunneling microscopy (STM) image of λ-DNA on octyltrichlorosilane deposited Si.

  6. Photon scanning tunneling microscope in combination with a force microscope

    NARCIS (Netherlands)

    Moers, M.H.P.; Moers, M.H.P.; Tack, R.G.; van Hulst, N.F.; Bölger, B.; Bölger, B.

    1994-01-01

    The simultaneous operation of a photon scanning tunneling microscope with an atomic force microscope is presented. The use of standard atomic force silicon nitride cantilevers as near-field optical probes offers the possibility to combine the two methods. Vertical forces and torsion are detected

  7. Spin polarization of electrons in a magnetic impurity doped ...

    Indian Academy of Sciences (India)

    Abstract. A theoretical model is presented in this paper for degree of spin polarization in a light emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different ...

  8. Effect of spin polarization on the structural properties and bond ...

    Indian Academy of Sciences (India)

    coupled to semi-empirical hardness theory proved effective in hardness prediction for the metal borides which agree well with the experimental values. These results would help to gain insight into the spin-polarized effect on the structural and bond hardness. Keywords. Iron boride; DFT; spin polarized; critical pressure; ...

  9. Spin polarization of electrons in a magnetic impurity doped ...

    Indian Academy of Sciences (India)

    A theoretical model is presented in this paper for degree of spin polarization in alight emitting diode (LED) whose epitaxial region contains quantum dots doped with magnetic impurity. The model is then used to investigate the effect of electron–phonon interaction on degree of spin polarization at different temperatures and ...

  10. Detecting Spin-Polarized Currents in Ballistic Nanostructures

    DEFF Research Database (Denmark)

    Potok, R.; Folk, J.; M. Marcus, C.

    2002-01-01

    We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from an emitter point contact into a collector point contact....

  11. Diffusion equation and spin drag in spin-polarized transport

    DEFF Research Database (Denmark)

    Flensberg, Karsten; Jensen, Thomas Stibius; Mortensen, Asger

    2001-01-01

    We study the role of electron-electron interactions for spin-polarized transport using the Boltzmann equation, and derive a set of coupled transport equations. For spin-polarized transport the electron-electron interactions are important, because they tend to equilibrate the momentum of the two-s...

  12. Scanning tunneling microscopy III theory of STM and related scanning probe methods

    CERN Document Server

    Güntherodt, Hans-Joachim

    1996-01-01

    Scanning Tunneling Microscopy III provides a unique introduction to the theoretical foundations of scanning tunneling microscopy and related scanning probe methods. The different theoretical concepts developed in the past are outlined, and the implications of the theoretical results for the interpretation of experimental data are discussed in detail. Therefore, this book serves as a most useful guide for experimentalists as well as for theoreticians working in the filed of local probe methods. In this second edition the text has been updated and new methods are discussed.

  13. Seismic scanning tunneling macroscope - Elastic simulations and Arizona mine test

    KAUST Repository

    Hanafy, Sherif M.

    2012-01-01

    Elastic seismic simulations and field data tests are used to validate the theory of a seismic scanning tunneling macroscope (SSTM). For nearfield elastic simulation, the SSTM results show superresolution to be better than λ/8 if the only scattered data are used as input data. If the direct P and S waves are muted then the resolution of the scatterer locations are within about λ/5. Seismic data collected in an Arizona tunnel showed a superresolution limit of at least λ/19. These test results are consistent with the theory of the SSTM and suggest that the SSTM can be a tool used by geophysicists as a probe for near-field scatterers.

  14. Scanning Tunneling Microscopy methods for spectroscopic imaging of subsurface interfaces

    Science.gov (United States)

    Bell, L. D.; Kaiser, W. J.

    1988-01-01

    A new method for spatially-resolved, spectroscopic investigation of subsurface interface structure has been developed. The method, Ballistic Electron Emission Microscopy (BEEM), is based on Scanning Tunneling Microscopy (STM) techniques. BEEM combines STM vacuum tunneling with unique ballistic electron spectroscopy capabilities. BEEM enables, for the first time, direct imaging of subsurface interface electronic properties with nanometer spatial resolution. STM topographic images of surface structure and BEEM images of subsurface properties are obtained simultaneously. BEEM capabilities are demonstrated by investigation of important metal-semiconductor interfaces.

  15. Distinction of nuclear spin states with the scanning tunneling microscope.

    Science.gov (United States)

    Natterer, Fabian Donat; Patthey, François; Brune, Harald

    2013-10-25

    We demonstrate rotational excitation spectroscopy with the scanning tunneling microscope for physisorbed H(2) and its isotopes HD and D(2). The observed excitation energies are very close to the gas phase values and show the expected scaling with the moment of inertia. Since these energies are characteristic for the molecular nuclear spin states we are able to identify the para and ortho species of hydrogen and deuterium, respectively. We thereby demonstrate nuclear spin sensitivity with unprecedented spatial resolution.

  16. Extension of Seismic Scanning Tunneling Macroscope to Elastic Waves

    KAUST Repository

    Tarhini, Ahmad

    2017-11-06

    The theory for the seismic scanning tunneling macroscope is extended from acoustic body waves to elastic body-wave propagation. We show that, similar to the acoustic case, near-field superresolution imaging from elastic body waves results from the O(1/R) term, where R is the distance between the source and near-field scatterer. The higher-order contributions R−n for n>1 are cancelled in the near-field region for a point source with normal stress.

  17. Sub-Kelvin scanning tunneling microscopy on magnetic molecules

    OpenAIRE

    Zhang, Lei

    2012-01-01

    Magnetic molecules have attracted lots interest. In this work, an ultra-stable and low noise scanning tunneling microscopy operating at 400 mK using He-3 (930 mK using He-4) has been developed. The magnetic behavior of different magnetic molecules on substrates, especially the exchange interaction between the magnetic ions, the magnetic anisotropy on the surface, the magnetic excitations as well as the Kondo effect, were studied by using STM.

  18. Scanning tunneling microscopy studies of diamond films and optoelectronic materials

    Science.gov (United States)

    Perez, Jose M.

    1993-01-01

    In this report, we report on progress achieved from 12/1/92 to 10/1/93 under the grant entitled 'Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials'. We have set-up a chemical vapor deposition (CVD) diamond film growth system and a Raman spectroscopy system to study the nucleation and growth of diamond films with atomic resolution using scanning tunneling microscopy (STM). A unique feature of the diamond film growth system is that diamond films can be transferred directly to the ultrahigh vacuum (UHV) chamber of a scanning tunneling microscope without contaminating the films by exposure to air. The University of North Texas (UNT) provided $20,000 this year as matching funds for the NASA grant to purchase the diamond growth system. In addition, UNT provided a Coherent Innova 90S Argon ion laser, a Spex 1404 double spectrometer, and a Newport optical table costing $90,000 to set-up the Raman spectroscopy system. The CVD diamond growth system and Raman spectroscopy system will be used to grow and characterize diamond films with atomic resolution using STM as described in our proposal. One full-time graduate student and one full-time undergraduate student are supported under this grant. In addition, several graduate and undergraduate students were supported during the summer to assist in setting-up the diamond growth and Raman spectroscopy systems. We have obtained research results concerning STM of the structural and electronic properties of CVD grown diamond films, and STM and scanning tunneling spectroscopy of carbon nanotubes. In collaboration with the transmission electron microscopy (TEM) group at UNT, we have also obtained results concerning the optoelectronic material siloxene. These results were published in refereed scientific journals, submitted for publication, and presented as invited and contributed talks at scientific conferences.

  19. Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces

    Science.gov (United States)

    Fay, P.; Brockenbrough, R. T.; Abeln, G.; Scott, P.; Agarwala, S.; Adesida, I.; Lyding, J. W.

    1994-06-01

    The chemical modification of n- and p-type hydrogen-passivated Si(100) surfaces by a scanning tunneling microscope (STM) is reported. The modified areas have been examined with STM, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Comparison of these characterization techniques indicates the features are both chemical and topographic in nature and are the result of local oxidation of the substrate. In addition, pattern transfer for the defined regions has been demonstrated with both thermal oxidation and HBr reactive-ion etching.

  20. Designing magnetic droplet soliton nucleation employing spin polarizer

    Science.gov (United States)

    Mohseni, Morteza; Mohseni, Majid

    2018-04-01

    We show by means of micromagnetic simulations that spin polarizer in nano-contact (NC) spin torque oscillators as the representative of the fixed layer in an orthogonal pseudo-spin valve can be employed to design and to control magnetic droplet soliton nucleation and dynamics. We found that using a tilted spin polarizer layer decreases the droplet nucleation time which is more suitable for high speed applications. However, a tilted spin polarizer increases the nucleation current and decreases the frequency stability of the droplet. Additionally, by driving the magnetization inhomogenously at the NC region, it is found that a tilted spin polarizer reduces the precession angle of the droplet and through an interplay with the Oersted field of the DC current, it breaks the spatial symmetry of the droplet profile. Our findings explore fundamental insight into nano-scale magnetic droplet soliton dynamics with potential tunability parameters for future microwave electronics.

  1. A frozen spin polarized target for S134

    CERN Multimedia

    1974-01-01

    The CERN-ETH, Zurich-Helsinki-Imperial College-Southampton Collaboration used a frozen spin polarized target together with the ETH spectrometer magnet to study spin effects (S134). Beam was d31 in South Hall

  2. Neutron stars with spin polarized self-interacting dark matter

    OpenAIRE

    Rezaei, Zeinab

    2018-01-01

    Dark matter, one of the important portion of the universe, could affect the visible matter in neutron stars. An important physical feature of dark matter is due to the spin of dark matter particles. Here, applying the piecewise polytropic equation of state for the neutron star matter and the equation of state of spin polarized self-interacting dark matter, we investigate the structure of neutron stars which are influenced by the spin polarized self-interacting dark matter. The behavior of the...

  3. Theory and feasibility tests for a seismic scanning tunnelling macroscope

    KAUST Repository

    Schuster, Gerard T.

    2012-09-01

    We propose a seismic scanning tunnelling macroscope (SSTM) that can detect subwavelength scatterers in the near-field of either the source or the receivers. Analytic formulas for the time reverse mirror (TRM) profile associated with a single scatterer model show that the spatial resolution limit to be, unlike the Abbe limit of λ/2, independent of wavelength and linearly proportional to the source-scatterer separation as long as the scatterer is in the near-field region. This means that, as the scatterer approaches the source, imaging of the scatterer with super-resolution can be achieved. Acoustic and elastic simulations support this concept, and a seismic experiment in an Arizona tunnel shows a TRM profile with super-resolution adjacent to the fault location. The SSTM is analogous to the optical scanning tunnelling microscopes having subwavelength resolution. Scaled to seismic frequencies, it is theoretically possible to extract 100 Hz information from 20 Hz data by the imaging of near-field seismic energy.

  4. EDITORIAL: New materials with high spin polarization: half-metallic Heusler compounds

    Science.gov (United States)

    Felser, Claudia; Hillebrands, Burkard

    2007-03-01

    thin film Appl. Phys. Lett. 88 262503 [6] Thomas A, Meyners D, Ebke D, Liu N-N, Sacher M D, Schmalhorst J, Reiss G, Ebert H, and Hütten A 2006 Inverted spin polarization of Heusler alloys for spintronic devices Appl. Phys. Lett. 89 012502 [7] Hillebrands B and Felser C 2006 Editorial: High-spin polarization of Heusler alloys J. Phys. D: Appl. Phys. 39 issue 5 http://stacks.iop.org/0022-3727/39/i=5 [8] Galanakis I, Mavropoulos Ph and Dederichs P H 2006 Electronic structure and Slater-Pauling behaviour in half-metallic Heusler alloys calculated from first principles J. Phys. D: Appl. Phys. 39 765 J. Phys. D: Appl. Phys. 39 765 [9] Kandpal H C, Felser C and Seshadri R 2006 Covalent bonding and the nature of band gaps in some half-Heusler compounds J. Phys. D: Appl. Phys. 39 776 [10] Kallmayer M, Elmers H J, Balke B, Wurmehl S, Emmerling F, Fecher G H and Felser C 2006 Magnetic properties of Co2Mn1-xFexSi Heusler alloys J. Phys. D: Appl. Phys. 39 786 [11] Attema J J, de Wijs G A and de Groot R A 2006 The continuing drama of the half-metal/semiconductor interface J. Phys. D: Appl. Phys. 39 793 [12] Leziac M, Mavropoulos Ph, Bihlmayer G and Blügel S 2006 Scanning tunnelling microscopy of surfaces of half-metals: an ab-initio study on NiMnSb(001) J. Phys. D: Appl. Phys. 39 797 [13] Wurmehl S, Fecher G H, Kroth K, Kronast F, Dürr H A, Takeda Y, Saitoh Y, Kobayashi K, Lin H-J, Schönhense G and Felser C 2006 Electronic structure and spectroscopy of the quaternary Heusler alloy Co2Cr1-xFexAl J. Phys. D: Appl. Phys. 39 803 [14] Inomata K, Okamura S, Miyazaki A, Kikuchi M, Tezuka N, Wojcik M and Jedryka E 2006 Structural and magnetic properties and tunnel magnetoresistance for Co2(Cr,Fe)Al and Co2FeSi full-Heusler alloys J. Phys. D: Appl. Phys. 39 816 [15] Yamamoto M, Marukame T, Ishikawa T, Matsuda K, Uemura T and Arita M 2006 Fabrication of fully epitaxial magnetic tunnel junctions using cobalt-based full-Heusler alloy thin film and their tunnel magnetoresistance

  5. Optical and electrical characterization at the nanoscale with a transparent probe of a scanning tunnelling microscope

    International Nuclear Information System (INIS)

    Sychugov, Ilya; Omi, Hiroo; Murashita, Tooru; Kobayashi, Yoshihiro

    2009-01-01

    A new type of scanning probe microscope, combining features of the scanning tunnelling microscope, the scanning tunnelling luminescence microscope with a transparent probe and the aperture scanning near-field optical microscope, is described. Proof-of-concept experiments were performed under ultrahigh vacuum conditions at varying temperature on GaAs/AlAs heterostructures.

  6. Dark states in spin-polarized transport through triple quantum dot molecules

    Science.gov (United States)

    Wrześniewski, K.; Weymann, I.

    2018-02-01

    We study the spin-polarized transport through a triple-quantum-dot molecule weakly coupled to ferromagnetic leads. The analysis is performed by means of the real-time diagrammatic technique, including up to the second order of perturbation expansion with respect to the tunnel coupling. The emphasis is put on the impact of dark states on spin-resolved transport characteristics. It is shown that the interplay of coherent population trapping and cotunneling processes results in a highly nontrivial behavior of the tunnel magnetoresistance, which can take negative values. Moreover, a super-Poissonian shot noise is found in transport regimes where the current is blocked by the formation of dark states, which can be additionally enhanced by spin dependence of tunneling processes, depending on the magnetic configuration of the device. The mechanisms leading to those effects are thoroughly discussed.

  7. Ab-initio theory of scanning tunneling microscopy

    Science.gov (United States)

    di Ventra, M.; Pantelides, S. T.

    1998-03-01

    An ab-initio theory of the Scanning Tunneling Microscope (STM) has been developed by treating the sample and the tip as a single system. The theory combines density functional theory with the Kubo-Greenwood linear-response formalism for the conductivity( See, e.g., N.F. Mott in Conduction in Non-Crystalline Materials), (Oxford University Press, Oxford, 1987).. The current is computed by taking into account the atomic relaxations that occur on both the surface and the tip due to their mutal interactions. Illustrative examples will be presented for the case of a clean Al(110) surface and the same surface with a vacancy.

  8. Observation of diamond turned OFHC copper using Scanning Tunneling Microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Grigg, D.A.; Russell, P.E.; Dow, T.A.

    1988-12-01

    Diamond turned OFHC copper samples have been observed within the past few months using the Scanning Tunneling Microscope. Initial results have shown evidence of artifacts which may be used to better understand the diamond turning process. The STM`s high resolution capability and three dimensional data representation allows observation and study of surface features unobtainable with conventional profilometry systems. Also, the STM offers a better quantitative means by which to analyze surface structures than the SEM. This paper discusses findings on several diamond turned OFHC copper samples having different cutting conditions. Each sample has been cross referenced using STM and SEM.

  9. Near-field optical microscopy with a scanning tunneling microscope

    International Nuclear Information System (INIS)

    Barbara, A.; Lopez-Rios, T.; Quemerais, P.

    2005-01-01

    A homemade apertureless near-field optical microscope using a scanning tunneling microscope (STM) is described. The experimental set-up simultaneously provides optical and topographic images of the sample. Technical details and features of the set-up are presented, together with results demonstrating the sub-wavelength resolution achieved as well as its sensitivity to dielectric contrasts. We show that the use of a STM permits to precisely control very small distances between the tip and the sample which is a great advantage to excite localized optical resonances between the tip and the surface

  10. Scanning Tunneling Microscopy analysis of space-exposed polymer films

    Science.gov (United States)

    Kalil, Carol R.; Young, Philip R.

    1993-01-01

    The characterization of the surface of selected space-exposed polymer films by Scanning Tunneling Microscopy (STM) is reported. Principles of STM, an emerging new technique for materials analysis, are reviewed. The analysis of several films which received up to 5.8 years of low Earth orbital (LEO) exposure onboard the NASA Long Duration Exposure Facility (LDEF) is discussed. Specimens included FEP Teflon thermal blanket material, Kapton film, and several experimental polymer films. Ultraviolet and atomic oxygen-induced crazing and erosion are described. The intent of this paper is to demonstrate how STM is enhancing the understanding of LEO space environmental effects on polymer films.

  11. Electric field effects in scanning tunneling microscope imaging

    DEFF Research Database (Denmark)

    Stokbro, Kurt; Quaade, Ulrich; Grey, Francois

    1998-01-01

    We present a high-voltage extension of the Tersoff-Hamann theory of scanning tunneling microscope (STM) images, which includes the effect of the electric field between the tip and the sample. The theoretical model is based on first-principles electronic structure calculations and has no adjustable...... parameters. We use the method to calculate theoretical STM images of the monohydrate Si(100)-H(2x1) surface with missing hydrogen defects at -2V and find an enhanced corrugation due to the electric field, in good agreement with experimental images....

  12. Role of spin polarized tunneling in magnetoresistance and low ...

    Indian Academy of Sciences (India)

    Lowering of ρ0 value (table 2) on application of magnetic field suggests that such imperfections are .... Soma Das and T K Dey. 636. Table 3. Best-fit parameters obtained from intergranular tun- neling model. H ρ0 ρ1 × 105. JS/KB. (Tesla). (Ω cm). (Ω cm K–3/2) ε. (K) x = 0⋅05. 0. 0⋅0731. 6⋅00. 0⋅4175. 95⋅61. 0⋅8.

  13. Role of spin polarized tunneling in magnetoresistance and low ...

    Indian Academy of Sciences (India)

    KMnO3 has been investigated between 10 K and 300 K with and without the magnetic field ( = 0.8 T). All the samples show metal–insulator transitions with Curie temperature (C) ranging between 260 K and 309 K. At temperature below 60 ...

  14. A High Rigidity and Precision Scanning Tunneling Microscope with Decoupled XY and Z Scans

    Directory of Open Access Journals (Sweden)

    Xu Chen

    2017-01-01

    Full Text Available A new scan-head structure for the scanning tunneling microscope (STM is proposed, featuring high scan precision and rigidity. The core structure consists of a piezoelectric tube scanner of quadrant type (for XY scans coaxially housed in a piezoelectric tube with single inner and outer electrodes (for Z scan. They are fixed at one end (called common end. A hollow tantalum shaft is coaxially housed in the XY-scan tube and they are mutually fixed at both ends. When the XY scanner scans, its free end will bring the shaft to scan and the tip which is coaxially inserted in the shaft at the common end will scan a smaller area if the tip protrudes short enough from the common end. The decoupled XY and Z scans are desired for less image distortion and the mechanically reduced scan range has the superiority of reducing the impact of the background electronic noise on the scanner and enhancing the tip positioning precision. High quality atomic resolution images are also shown.

  15. Optical characterication of probes for photon scanning tunnelling microscopy

    DEFF Research Database (Denmark)

    Vohnsen, Brian; Bozhevolnyi, Sergey I.

    1999-01-01

    The photon scanning tunnelling microscope is a well-established member of the family of scanning near-field optical microscopes used for optical imaging at the sub-wavelength scale. The quality of the probes, typically pointed uncoated optical fibres, used is however difficult to evaluate...... in a direct manner and has most often been inferred from the apparent quality of recorded optical images. Complicated near-field optical imaging characteristics, together with the possibility of topographically induced artefacts, however, has increased demands for a more reliable probe characterization...... technique. Here we present experimental results obtained for optical characterization of two different probes by imaging of a well-specified near-field intensity distribution at various spatial frequencies. In particular, we observe that a sharply pointed dielectric probe can be highly suitable for imaging...

  16. From Graphite to Graphene via Scanning Tunneling Microscopy

    Science.gov (United States)

    Qi, Dejun

    The primary objective of this dissertation is to study both graphene on graphite and pristine freestanding grapheme using scanning tunneling microscopy (STM) and density functional theory (DFT) simulation technique. In the experiment part, good quality tungsten metalic tips for experiment were fabricated using our newly developed tip making setup. Then a series of measurements using a technique called electrostatic-manipulation scanning tunneling microscopy (EM-STM) of our own development were performed on a highly oriented pyrolytic graphite (HOPG) surface. The electrostatic interaction between the STM tip and the sample can be tuned to produce both reversible and irreversible large-scale movement of the graphite surface. Under this influence, atomic-resolution STM images reveal that a continuous electronic transition between two distinct patterns can be systematically controlled. DFT calculations reveal that this transition can be related to vertical displacements of the top layer of graphite relative to the bulk. Evidence for horizontal shifts in the top layer of graphite is also presented. Excellent agreement is found between experimental STM images and those simulated using DFT. In addition, the EM-STM technique was also used to controllably and reversibly pull freestanding graphene membranes up to 35 nm from their equilibrium height. Atomic-scale corrugation amplitudes 20 times larger than the STM electronic corrugation for graphene on a substrate were observed. The freestanding graphene membrane responds to a local attractive force created at the STM tip as a highly conductive yet flexible grounding plane with an elastic restoring force.

  17. Graphene quantum dots probed by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Morgenstern, Markus; Freitag, Nils; Nent, Alexander; Nemes-Incze, Peter; Liebmann, Marcus [II. Institute of Physics B and JARA-FIT, RWTH Aachen University, Aachen (Germany)

    2017-11-15

    Scanning tunneling spectroscopy results probing the electronic properties of graphene quantum dots are reviewed. After a short summary of the study of squared wave functions of graphene quantum dots on metal substrates, we firstly present data where the Landau level gaps caused by a perpendicular magnetic field are used to electrostatically confine electrons in monolayer graphene, which are probed by the Coulomb staircase revealing the consecutive charging of a quantum dot. It turns out that these quantum dots exhibit much more regular charging sequences than lithographically confined ones. Namely, the consistent grouping of charging peaks into quadruplets, both, in the electron and hole branch, portrays a regular orbital splitting of about 10meV. At low hole occupation numbers, the charging peaks are, partly, additionally grouped into doublets. The spatially varying energy separation of the doublets indicates a modulation of the valley splitting by the underlying BN substrate. We outline that this property might be used to eventually tune the valley splitting coherently. Afterwards, we describe graphene quantum dots with multiple contacts produced without lithographic resist, namely by local anodic oxidation. Such quantum dots target the goal to probe magnetotransport properties during the imaging of the corresponding wave functions by scanning tunneling spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Spin inelastic electron tunneling spectroscopy on local spin adsorbed on surface.

    Science.gov (United States)

    Fransson, J

    2009-06-01

    The recent experimental conductance measurements taken on magnetic impurities on metallic surfaces, using scanning tunneling microscopy technique and suggesting occurrence of inelastic scattering processes, are theoretically addressed. We argue that the observed conductance signatures are caused by transitions between the spin states that have opened due to, for example, exchange coupling between the local spins and the tunneling electrons, and are directly interpretable in terms of inelastic transitions energies. Feasible measurements using spin-polarized scanning tunneling microscopy that would enable new information about the excitation spectrum of the local spins are discussed.

  19. An enhancement of spin polarization by multiphoton pumping in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

    2011-08-15

    Highlights: {yields} Multiphoton pumping and spin generation in semiconductors. {yields} Optical selection rules for inter-band transitions. {yields} Calculations of spin polarization using band-energy model and the second order perturbation theory. {yields} Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

  20. An enhancement of spin polarization by multiphoton pumping in semiconductors

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2011-01-01

    Highlights: → Multiphoton pumping and spin generation in semiconductors. → Optical selection rules for inter-band transitions. → Calculations of spin polarization using band-energy model and the second order perturbation theory. → Enhancement of the electronic spin polarization. - Abstract: A pump-probe spectroscopic study has been carried out in zinc-blende bulk semiconductors. In the semiconductor samples, a spin-polarized carrier population is produced by the absorption of a monochromatic circularly polarized light beam with two-photon energy above the direct band gap in bulk semiconductors. The production of a carrier population with a net spin is a consequence of the optical selection rules for the heavy-hole and light-hole valence-to-conduction band transitions. This production is probed by the spin-dependent transmission of the samples in the time domain. The spin polarization of the conduction-band-electrons in dependences of delay of the probe beam as well as of pumping photon energy is estimated. The spin polarization is found to depolarize rapidly for pumping energy larger than the energy gap of the split-off band to the conduction band. From the polarization decays, the spin relaxation times are also estimated. Compared to one-photon pumping, the results, however, show that an enhancement of the spin-polarization is achieved by multiphoton excitation of the samples. The experimental results are compared with those obtained in calculations using second order perturbation theory of the spin transport model. A good agreement between experiment and theory is obtained. The observed results are discussed in details.

  1. Spin-polarized photoemission from SiGe heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  2. Current-induced spin polarization in a spin-polarized two-dimensional electron gas with spin-orbit coupling

    International Nuclear Information System (INIS)

    Wang, C.M.; Pang, M.Q.; Liu, S.Y.; Lei, X.L.

    2010-01-01

    The current-induced spin polarization (CISP) is investigated in a combined Rashba-Dresselhaus spin-orbit-coupled two-dimensional electron gas, subjected to a homogeneous out-of-plane magnetization. It is found that, in addition to the usual collision-related in-plane parts of CISP, there are two impurity-density-free contributions, arising from intrinsic and disorder-mediated mechanisms. The intrinsic parts of spin polarization are related to the Berry curvature, analogous with the anomalous and spin Hall effects. For short-range collision, the disorder-mediated spin polarizations completely cancel the intrinsic ones and the total in-plane components of CISP equal those for systems without magnetization. However, for remote disorders, this cancellation does not occur and the total in-plane components of CISP strongly depend on the spin-orbit interaction coefficients and magnetization for both pure Rashba and combined Rashba-Dresselhaus models.

  3. Fully low voltage and large area searching scanning tunneling microscope

    International Nuclear Information System (INIS)

    Pang, Zongqiang; Wang, Jihui; Lu, Qingyou

    2009-01-01

    We present a novel scanning tunneling microscope (STM), which allows the tip to travel a large distance (millimeters) on the sample and take images (to find microscopic targets) anywhere it reaches without losing atomic resolution. This broad range searching capability, together with the coarse approach and scan motion, is all done with only one single piezoelectric tube scanner as well as with only low voltages (<15 V). Simple structure, low interference and high precision are thus achieved. To this end, a pillar and a tube scanner are mounted in parallel on a base with one ball glued on the pillar top and two balls glued on the scanner top. These three balls form a narrow triangle, which supports a triangular slider piece. By inertial stepping, the scanner can move the slider toward the pillar (coarse approach) or rotate the slider about the pillar (travel along sample surface). Since all the stepping motions are driven by the scanner's lateral bending which is large per unit voltage, high voltages are unnecessary. The technology is also applicable to scanning force microscopes (SFM) such as atomic force microscopes (AFM), etc

  4. Sequencing of adenine in DNA by scanning tunneling microscopy

    Science.gov (United States)

    Tanaka, Hiroyuki; Taniguchi, Masateru

    2017-08-01

    The development of DNA sequencing technology utilizing the detection of a tunnel current is important for next-generation sequencer technologies based on single-molecule analysis technology. Using a scanning tunneling microscope, we previously reported that dI/dV measurements and dI/dV mapping revealed that the guanine base (purine base) of DNA adsorbed onto the Cu(111) surface has a characteristic peak at V s = -1.6 V. If, in addition to guanine, the other purine base of DNA, namely, adenine, can be distinguished, then by reading all the purine bases of each single strand of a DNA double helix, the entire base sequence of the original double helix can be determined due to the complementarity of the DNA base pair. Therefore, the ability to read adenine is important from the viewpoint of sequencing. Here, we report on the identification of adenine by STM topographic and spectroscopic measurements using a synthetic DNA oligomer and viral DNA.

  5. Metallocene Molecular Clusters Studied with Scanning Tunneling Microscopy and Spectroscopy

    Science.gov (United States)

    Kwon, Jeonghoon; Ham, Ungdon; Lee, Minjun; Lim, Seong Joon; Kuk, Young

    2014-03-01

    Atomic spins and molecular magnets have been actively reported using Scanning Tunneling Microscope(STM) in recent studies. One can even assemble an artificial magnet by STM manipulation. Manganocene((C5H5)2 Mn), a sandwich complex of metallocene, is composed of one manganese atom and two cyclopentadianyl ligands. This molecule is known to reveal not only high spin number S = 5/2 at room temperature but also two structural states: monomer and molecular chain. In this presentation, we report STM images and spectroscopic results of these monomers and dimers. We try to map the molecular electronic state and the spin texture. The molecule is adsorbed on an insulating layer to decouple the spin state from the metallic substrate. We will present that manganocene can become a basic element of a spin chain.

  6. Molecules on vicinal Au surfaces studied by scanning tunnelling microscopy

    International Nuclear Information System (INIS)

    Kroeger, J; Neel, N; Jensen, H; Berndt, R; Rurali, R; Lorente, N

    2006-01-01

    Using low-temperature scanning tunnelling microscopy and spectroscopy we investigated the adsorption characteristics of 3,4,9,10-perylenetetracarboxylic-dianhydride and fullerenes on Au(788), Au(433), and Au(778). On Au(788) and Au(778), 3,4,9,10-perylenetetracarboxylic-dianhydride exhibits three coexisting superstructures, which do not reflect the periodicity of the hosting substrate. The adsorption on Au(433) leads to the formation of molecule chains along the step edges after annealing the sample. Fullerene molecules on Au(788) arrange in a mesh of islands, which extends over several hundreds of nanometres with an extraordinarily high periodicity. A combination of fullerene adsorption and annealing leads to facetting of Au(433) and the formation of extraordinarily long fullerene stripes

  7. Fault detection by surface seismic scanning tunneling macroscope: Field test

    KAUST Repository

    Hanafy, Sherif M.

    2014-08-05

    The seismic scanning tunneling macroscope (SSTM) is proposed for detecting the presence of near-surface impedance anomalies and faults. Results with synthetic data are consistent with theory in that scatterers closer to the surface provide brighter SSTM profiles than those that are deeper. The SSTM profiles show superresolution detection if the scatterers are in the near-field region of the recording line. The field data tests near Gulf of Aqaba, Haql, KSA clearly show the presence of the observable fault scarp, and identify the subsurface presence of the hidden faults indicated in the tomograms. Superresolution detection of the fault is achieved, even when the 35 Hz data are lowpass filtered to the 5-10 Hz band.

  8. Investigation of Current Induced Spin Polarization in III-V Semiconductor Epilayers

    Science.gov (United States)

    Luengo-Kovac, Marta

    In the development of a semiconductor spintronics device, a thorough understanding of spin dynamics in semiconductors is necessary. In particular, electrical control of electron spins is advantageous for its compatibility with present day electronics. In this thesis, we will discuss the electrical modification of the electron g-factor, which characterizes the strength of the interaction between a spin and a magnetic field, as well as investigate electrically generated spin polarizations as a function of various material parameters. We report on the modification of the electron g-factor by an in-plane electric field in an InGaAs epilayer. We performed external magnetic field scans of the Kerr rotation of the InGaAs film in order to measure the g-factor independently of the spin-orbit fields. The g-factor increases from -0.4473(0.0001) at 0 V/cm to -0.4419( 0.0001) at 50 V/cm applied along the [110] crystal axis. A comparison of temperature and voltage dependent photoluminescence measurements indicate that minimal channel heating occurs at these voltages. Possible explanations for this g-factor modification are discussed, including an increase in the electron temperature that is independent of the lattice temperature and the modification of the donor-bound electron wave function by the electric field. The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InGaAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the spin polarization mechanism is extrinsic. Temperature-dependent measurements of the spin dephasing rates and mobilities were used to characterize the relative strengths of the intrinsic D

  9. Fusion with highly spin polarized HD and D2

    International Nuclear Information System (INIS)

    Honig, A.

    1992-01-01

    This report discusses the following topics relating to inertial confinement with spin polarized hydrogen targets: low temperature implementation of mating a target to omega; dilution-refrigerator cold-entry and retrieval system; target shell tensile strength characterization at low temperatures; and proton and deuteron spin-lattice relaxation measurements in HD in the millikelvin temperature range

  10. Spin-Polarized Semiconductor Induced by Magnetic Impurities in Graphene

    OpenAIRE

    Daghofer, Maria; Zheng, Nan; Moreo, Adriana

    2010-01-01

    Magnetic impurities adsorbed on graphene are coupled magnetically via the itinerant electrons. This interaction opens a gap in the band structure of graphene. The result strongly depends on how the magnetic impurities are distributed. While random doping produces a semiconductor, if all or most impurities are located in the same sublattice, the spin degeneracy is removed and a spin-polarized semiconductor arises.

  11. Experiment on the melting pressure of spin polarized He3

    DEFF Research Database (Denmark)

    Chapellier, M.; Olsen, M.; Rasmussen, Finn Berg

    1981-01-01

    In liquid He in a Pomeranchuk cell, the melting curve has been observed to be suppressed, presumably in regions with a strong local spin polarization. In the temperature range 30-50 mK the observed suppression was 60-80 kPa. The corresponding local polarization is estimated, in a crude model, to ...

  12. Spin polarization effects in low-energy elastic electron scattering

    International Nuclear Information System (INIS)

    Beerlage, M.J.M.

    1982-01-01

    This work describes experiments on the role of spin polarization in elastic electron scattering. Chapter I introduces the topic and in chapter II elastic scattering of 10-50 eV electrons from Ar and Kr in the angular range between 40 0 and 110 0 is studied. Noble gases have been chosen as targets in view of their relative theoretical simplicity. Below 25 eV scattered intensities measured by various authors exhibit severe disagreements. However, in the entire energy range, the spin polarization results can reasonably well be used to point out the shortcomings of the available theoretical data. The main topic of chapter III is the first attempt to determine the magnitude of a polarization phenomenon - in elastic electron scattering from the optically active camphor molecule - of which the existence has recently been predicted qualitatively from the absence of parity symmetry in such molecules. Besides these studies on gaseous targets the author has initiated a scattering experiment on crystal surfaces, using spin polarized electrons. Within the framework of this project a large new experimental arrangement has been built up. It consists of a spin polarized electron source and a LEED scattering chamber. Design, construction and test results, showing the usefulness of the set-up, are described in the last chapter. (Auth.)

  13. Dresselhaus spin-orbit coupling induced spin-polarization and resonance-split in n-well semiconductor superlattices

    International Nuclear Information System (INIS)

    Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.

    2009-01-01

    Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure

  14. Light-free magnetic resonance force microscopy for studies of electron spin polarized systems

    International Nuclear Information System (INIS)

    Pelekhov, Denis V.; Selcu, Camelia; Banerjee, Palash; Chung Fong, Kin; Chris Hammel, P.; Bhaskaran, Harish; Schwab, Keith

    2005-01-01

    Magnetic resonance force microscopy is a scanned probe technique capable of three-dimensional magnetic resonance imaging. Its excellent sensitivity opens the possibility for magnetic resonance studies of spin accumulation resulting from the injection of spin polarized currents into a para-magnetic collector. The method is based on mechanical detection of magnetic resonance which requires low noise detection of cantilever displacement; so far, this has been accomplished using optical interferometry. This is undesirable for experiments on doped silicon, where the presence of light is known to enhance spin relaxation rates. We report a non-optical displacement detection scheme based on sensitive microwave capacitive readout

  15. Spin-polarized light-emitting diodes based on organic bipolar spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

    2017-10-25

    Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

  16. Universal spin-polarization fluctuations in one-dimensional wires with magnetic impurities

    DEFF Research Database (Denmark)

    Mortensen, Asger; Egues, J.C.

    2002-01-01

    -flip suppresses conductance fluctuations while enhancing spin-polarization fluctuations. More importantly, spin-polarization fluctuations attain a universal value 1/3 for large enough spin-flip strengths. This intrinsic spin-polarization fluctuation may pose a severe limiting factor to the realization of steady...

  17. Ring structures on natural molybdenum disulfide investigated by scanning tunneling and scanning force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Heckl, W.M.; Ohnesorge, F.; Binnig, G. (IBM Research Division, Muenchen (West Germany)); Specht, M. (Univ. Muenchen (West Germany)); Hashmi, M. (MPIf. Plasmaphysics, Garching (West Germany))

    In this paper the authors present a study of ring-like structures of two different sizes on a nanometer scale found on natural molybdenum disulfide (MoS{sub 2}). Investigation by scanning tunneling and scanning force microscopy as well as secondary-ion mass spectroscopy indicate that these rings might originate from included molecules. Synthetic compared to natural MoS{sub 2} shows characteristic differences. The origin of these striking structures could be the morphology of organic or even remnants of biological material included at the geological time when the mineral was formed and could therefore be regarded as a result of a molecular fossilization process. The alternative explanation that the ring structure is a nonmorphological and purely electronic effect caused by a point defect like a dopant is also discussed.

  18. Scanning tunneling microscopy and spectroscopy of phase change alloys

    Energy Technology Data Exchange (ETDEWEB)

    Subramaniam, Dinesh; Pauly, Christian; Pratzer, Marco; Liebmann, Marcus; Morgenstern, Markus [II. Physikalisches Institut B, RWTH Aachen (Germany); Rausch, Pascal; Woda, Michael; Wuttig, Matthias [I. Physikalisches Institut A, RWTH Aachen (Germany)

    2009-07-01

    Phase change random access memory (PCRAM) is a very promising candidate for the next generation of memories. In contrast to the standard Si-based RAM, PCRAM is a non-volatile storage system which exploits the high electrical contrast between the amorphous and the crystalline phase. However, the origin of this contrast is not well understood. Scanning tunneling microscopy gives insight into the local atomic structure and the electronic properties of phase change materials. Using the topography mode of STM, we realized images of Ge{sub 1}Sb{sub 2}Te{sub 4} on the nanometer down to the atomic scale, revealing the morphology as well as the complex atomic arrangement of the sputter-deposited material. The spectroscopy mode enabled us to analyse the local density of states in the amorphous and crystalline phase. The band gap varied continuously from 0.5 eV in the amorphous phase to 0.2 eV in the crystalline phase. The Fermi level moved from the center of the gap in the amorphous phase into the valence band within the crystalline phase.

  19. Scanning tunneling microscopy study of GaAs(001) surfaces

    Science.gov (United States)

    Xue, Qi-Kun; Hashizume, T.; Sakurai, T.

    1999-03-01

    While GaAs(001) is the most commonly used substrate in fabrication of wireless and opto-electronic devices based on III-V compound semiconductors by molecular beam epitaxy (MBE), metallorganic chemical vapor deposition (MOCVD) and related techniques, its surface structure have been disputed since the beginning of development of the techniques. Invention of scanning tunneling microscopy (STM) has revolutionized the approach of surface/interface investigation, contributing greatly in the atomistic understanding of the GaAs surface phases. This paper reviews the STM studies of principal reconstructions, from As-rich c(4×4), 2×4, 2×6 to Ga-rich 4×2 and 4×6, found on the GaAs (001) surface. These studies, together with advanced theoretical efforts, have helped us to establish a unified structural model for various reconstructions, with which we can now explain most of the observations and long-standing controversies in atomic structures and surface stoichiometries.

  20. Widespread spin polarization effects in photoemission from topological insulators

    Energy Technology Data Exchange (ETDEWEB)

    Jozwiak, C.; Chen, Y. L.; Fedorov, A. V.; Analytis, J. G.; Rotundu, C. R.; Schmid, A. K.; Denlinger, J. D.; Chuang, Y.-D.; Lee, D.-H.; Fisher, I. R.; Birgeneau, R. J.; Shen, Z.-X.; Hussain, Z.; Lanzara, A.

    2011-06-22

    High-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi{sub 2}Se{sub 3} using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations of photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.

  1. Tilted Foils Nuclear Spin Polarization at REX-ISOLDE

    CERN Document Server

    Törnqvist, Hans Toshihide

    2013-08-08

    This thesis will explain and summarize my work and involvement in experiments aimed at producing nuclear spin polarization of post-accelerated beams of ions with the tilted-foils technique at the REX-ISOLDE linear accelerator at CERN. Polarizing the nuclear spin of radioactive beams in particular may provide access to observables which may be difficult to obtain otherwise. Currently, the techniques commonly employed for nuclear spin polarization are restricted to specific nuclides and experimental measurement techniques. Tilted foils polarization may provide a new tool to extend the range of nuclides that can be polarized and the types of experiments that can be performed. The experiments rely not only on the production but also on the method to measure the degree of attained polarization. Two methods will be treated, based on particle scattering in Coulomb excitation that may be utilized for stable beams, and the $\\beta$-NMR that requires $\\beta$-decaying nuclei. The experimental setups and measurements will...

  2. Effect of spin polarization on the structural properties and bond ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 39; Issue 6. Effect of spin ... Volume 39 Issue 6 October 2016 pp 1427-1434 ... Spin-polarization calculations show that ferromagnetic state (FM) is stable for FexB structures and carry magnetic moment of 1.12, 1.83 and 2.03 μ B inFeB, Fe 2 B and Fe 3 B, respectively.

  3. Magnetic switching of a single molecular magnet due to spin-polarized current

    Science.gov (United States)

    Misiorny, Maciej; Barnaś, Józef

    2007-04-01

    Magnetic switching of a single molecular magnet (SMM) due to spin-polarized current flowing between ferromagnetic metallic leads (electrodes) is investigated theoretically. Magnetic moments of the leads are assumed to be collinear and parallel to the magnetic easy axis of the molecule. Electrons tunneling through the barrier between magnetic leads are coupled to the SMM via exchange interaction. The current flowing through the system, as well as the spin relaxation times of the SMM, are calculated from the Fermi golden rule. It is shown that spin of the SMM can be reversed by applying a certain voltage between the two magnetic electrodes. Moreover, the switching may be visible in the corresponding current-voltage characteristics.

  4. Engineering the spin polarization of one-dimensional electrons

    Science.gov (United States)

    Yan, C.; Kumar, S.; Thomas, K.; See, P.; Farrer, I.; Ritchie, D.; Griffiths, J.; Jones, G.; Pepper, M.

    2018-02-01

    We present results of magneto-focusing on the controlled monitoring of spin polarization within a one-dimensional (1D) channel, and its subsequent effect on modulating the spin–orbit interaction (SOI) in a 2D GaAs electron gas. We demonstrate that electrons within a 1D channel can be partially spin polarized as the effective length of the 1D channel is varied in agreement with the theoretical prediction. Such polarized 1D electrons when injected into a 2D region result in a split in the odd-focusing peaks, whereas the even peaks remain unaffected (single peak). On the other hand, the unpolarized electrons do not affect the focusing spectrum and the odd and even peaks remain as single peaks, respectively. The split in odd-focusing peaks is evidence of direct measurement of spin polarization within a 1D channel, where each sub-peak represents the population of a particular spin state. Confirmation of the spin splitting is determined by a selective modulation of the focusing peaks due to the Zeeman energy in the presence of an in-plane magnetic field. We suggest that the SOI in the 2D regime is enhanced by a stream of polarized 1D electrons. The spatial control of spin states of injected 1D electrons and the possibility of tuning the SOI may open up a new regime of spin-engineering with application in future quantum information schemes.

  5. Design and performance of a beetle-type double-tip scanning tunneling microscope

    International Nuclear Information System (INIS)

    Jaschinsky, Philipp; Coenen, Peter; Pirug, Gerhard; Voigtlaender, Bert

    2006-01-01

    A combination of a double-tip scanning tunneling microscope with a scanning electron microscope in ultrahigh vacuum environment is presented. The compact beetle-type design made it possible to integrate two independently driven scanning tunneling microscopes in a small space. Moreover, an additional level for coarse movement allows the decoupling of the translation and approach of the tunneling tip. The position of the two tips can be controlled from the millimeter scale down to 50 nm with the help of an add-on electron microscope. The instrument is capable of atomic resolution imaging with each tip

  6. Scanning tunneling microscopy studies of glucose oxidase on gold surface

    International Nuclear Information System (INIS)

    Losic, D.; Shapter, J.G.; Gooding, J.J.

    2002-01-01

    Full text: Three immobilization methods have been used for scanning tunneling microscopy (STM) studies of glucose oxidase (GOD) on gold. They are based on a) physical adsorption from solution, b) microcontact printing and c) covalent bonding onto self-assembled monolayers (SAM) of 3-mercaptopropionic acid (MPA). The STM images are used to provide information about the organization of individual GOD molecules and more densely packed monolayers of GOD on electrode surfaces, thus providing information of the role of interfacial structure on biosensor performance. The use of atomically flat gold substrates enables easy distinction of deposited enzyme features from the flat gold substrate. Microcontact printing is found to be a more reliable method than adsorption from solution for preparing individual GOD molecules on the gold surface STM images of printed samples reveal two different shapes of native GOD molecules. One is a butterfly shape with dimensions of 10 ± 1 nm x 6 ± 1 nm, assigned to the lying position of molecule while the second is an approximately spherical shape with dimensions of 6.5 ± 1 nm x 5 ± 1nm assigned to a standing position. Isolated clusters of 5 to 6 GOD molecules are also observed. With monolayer coverage, GOD molecules exhibit a tendency to organize themselves into a two dimensional array with adequate sample stability to obtain high-resolution STM images. Within these two-dimensional arrays are clearly seen repeating clusters of five to six enzyme molecules in a unit STM imaging of GOD monolayers covalently immobilized onto SAM (MPA) are considerably more difficult than when the enzyme is adsorbed directly onto the metal. Cluster structures are observed both high and low coverage despite the fact that native GOD is a negatively charged molecule. Copyright (2002) Australian Society for Electron Microscopy Inc

  7. Spectroscopy of surface adsorbed molecules (scanning tunneling microscopy). Progress report, May 1, 1985-April 30, 1986

    International Nuclear Information System (INIS)

    Coleman, R.V.

    1986-01-01

    A review of the scanning tunneling microscopy program is given. This article contains a description of the design and fabrication of the microscope in addition to description of studies which use the microscope: studies of charge-density waves and studies of tunnel junctions doped with metals and semiconductors. 48 refs., 26 figs

  8. A 3-d laser scanning system and scan data processing method for the monitoring of tunnel deformations

    Science.gov (United States)

    Chmelina, Klaus; Jansa, Josef; Hesina, Gerd; Traxler, Christoph

    2012-11-01

    The paper presents the mobile multi-sensor system Orthos Plus for the monitoring and mapping of tunnel walls, a scan data processing method for the evaluation of 3-d tunnel wall displacements from subsequent wall scans and, finally, a virtual reality tool supporting the interpretation of data. The measuring system consists of a 3-d laser scanner, a motorised total station and a digital camera that are integrated on a light metal frame that is installed on a mobile platform. It has been designed to perform tunnel measurements most efficiently and to meet the special requirements of tunnels under construction. The evaluation of 3-d displacements is based on a 3-d matching algorithm that takes advantage of the particular conditions of tunnel (shotcrete) surfaces. The virtual reality tool allows viewing of data in a 3-d virtual reality tunnel model and their animation in time and space in order supports understanding in an optimal way. The measuring system Orthos Plus has been developed in the course of a national research project, the 3-d matching method in the frame of the Austrian Christian Doppler Laboratory Spatial Data from Laser Scanning and Remote Sensing and the VR tool in the Austrian COMET K1 Competence Center VRVis Center (www.vrvis.at).

  9. Scanning tunneling microscopy III theory of STM and related scanning probe methods

    CERN Document Server

    Güntherodt, Hans-Joachim

    1993-01-01

    While the first two volumes on Scanning Tunneling Microscopy (STM) and its related scanning probe (SXM) methods have mainly concentrated on intro­ ducing the experimental techniques, as well as their various applications in different research fields, this third volume is exclusively devoted to the theory of STM and related SXM methods. As the experimental techniques including the reproducibility of the experimental results have advanced, more and more theorists have become attracted to focus on issues related to STM and SXM. The increasing effort in the development of theoretical concepts for STM/SXM has led to considerable improvements in understanding the contrast mechanism as well as the experimental conditions necessary to obtain reliable data. Therefore, this third volume on STM/SXM is not written by theorists for theorists, but rather for every scientist who is not satisfied by just obtaining real­ space images of surface structures by STM/SXM. After a brief introduction (Chap. 1), N. D. Lang first co...

  10. First-principles theory of inelastic currents in a scanning tunneling microscope

    DEFF Research Database (Denmark)

    Stokbro, Kurt; Hu, Ben Yu-Kuang; Thirstrup, C.

    1998-01-01

    A first-principles theory of inelastic tunneling between a model probe tip and an atom adsorbed on a surface is presented, extending the elastic tunneling theory of Tersoff and Hamann. The inelastic current is proportional to the change in the local density of states at the center of the tip due...... to the addition of the adsorbate. We use the theory to investigate the vibrational heating of an adsorbate below a scanning tunneling microscopy tip. We calculate the desorption rate of PI from Si(100)-H(2 X 1) as a function of the sample bias and tunnel current, and find excellent a,agreement with recent...

  11. Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Oberbeck, Lars [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); TOTAL Marketing Services, New Energies, La Défense 10, 92069 Paris La Défense Cedex (France); Reusch, Thilo C. G.; Hallam, Toby; Simmons, Michelle Y., E-mail: n.curson@ucl.ac.uk, E-mail: michelle.simmons@unsw.edu.au [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schofield, Steven R. [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); London Centre for Nanotechnology, UCL, London WC1H 0AH (United Kingdom); Department of Physics and Astronomy, UCL, London WC1E 6BT (United Kingdom); Curson, Neil J., E-mail: n.curson@ucl.ac.uk, E-mail: michelle.simmons@unsw.edu.au [Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); London Centre for Nanotechnology, UCL, London WC1H 0AH (United Kingdom); Department of Electronic and Electrical Engineering, UCL, London WC1E 7JE (United Kingdom)

    2014-06-23

    We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.

  12. Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Oberbeck, Lars; Reusch, Thilo C. G.; Hallam, Toby; Simmons, Michelle Y.; Schofield, Steven R.; Curson, Neil J.

    2014-01-01

    We demonstrate the locating and imaging of single phosphorus atoms and phosphorus dopant nanostructures, buried beneath the Si(001) surface using scanning tunneling microscopy. The buried dopant nanostructures have been fabricated in a bottom-up approach using scanning tunneling microscope lithography on Si(001). We find that current imaging tunneling spectroscopy is suited to locate and image buried nanostructures at room temperature and with residual surface roughness present. From these studies, we can place an upper limit on the lateral diffusion during encapsulation with low-temperature Si molecular beam epitaxy.

  13. TOPICAL REVIEW: Highly spin-polarized materials and devices for spintronics

    Directory of Open Access Journals (Sweden)

    Koichiro Inomata et al.

    2008-01-01

    Full Text Available The performance of spintronics depends on the spin polarization of the current. In this study half-metallic Co-based full-Heusler alloys and a spin filtering device (SFD using a ferromagnetic barrier have been investigated as highly spin-polarized current sources. The multilayers were prepared by magnetron sputtering in an ultrahigh vacuum and microfabricated using photolithography and Ar ion etching. We investigated two systems of Co-based full-Heusler alloys, Co2Cr1 ? xFexAl (CCFA(x and Co2FeSi1 ? xAlx (CFSA(x and revealed the structure and magnetic and transport properties. We demonstrated giant tunnel magnetoresistance (TMR of up to 220% at room temperature and 390% at 5 K for the magnetic tunnel junctions (MTJs using Co2FeSi0.5Al0.5 (CFSA(0.5 Heusler alloy electrodes. The 390% TMR corresponds to 0.81 spin polarization for CFSA(0.5 at 5 K. We also investigated the crystalline structure and local structure around Co atoms by x-ray diffraction (XRD and nuclear magnetic resonance (NMR analyses, respectively, for CFSA films sputtered on a Cr-buffered MgO (001 substrate followed by post-annealing at various temperatures in an ultrahigh vacuum. The disordered structures in CFSA films were clarified by NMR measurements and the relationship between TMR and the disordered structure was discussed. We clarified that the TMR of the MTJs with CFSA(0.5 electrodes depends on the structure, and is significantly higher for L21 than B2 in the crystalline structure. The second part of this paper is devoted to a SFD using a ferromagnetic barrier. The Co ferrite is investigated as a ferromagnetic barrier because of its high Curie temperature and high resistivity. We demonstrate the strong spin filtering effect through an ultrathin insulating ferrimagnetic Co-ferrite barrier at a low temperature. The barrier was prepared by the surface plasma oxidization of a CoFe2 film deposited on a MgO (001 single crystal substrate, wherein the spinel structure of CoFe2O4 (CFO

  14. Spin-polarization of an electro-static positron beam

    International Nuclear Information System (INIS)

    Kawasuso, A.; Maekawa, M.

    2008-01-01

    We constructed an electro-static positron beam apparatus. We fabricated a simple spin-polarimeter composed of a permanent magnet with a surface magnetic field of 0.65 T and an iron pole piece. The longitudinal spin-polarization of the positron beam was determined to be 0.3 by analyzing the magnetic field dependence of the Doppler broadening of annihilation radiation from a fused silica specimen. The effect of spin rotation was examined using an iron poly-crystal and a simple E x B filter

  15. Electron-Spin Filters Would Offer Spin Polarization Greater than 1

    Science.gov (United States)

    Ting, David Z.

    2009-01-01

    A proposal has been made to develop devices that would generate spin-polarized electron currents characterized by polarization ratios having magnitudes in excess of 1. Heretofore, such devices (denoted, variously, as spin injectors, spin polarizers, and spin filters) have typically offered polarization ratios having magnitudes in the approximate range of 0.01 to 0.1. The proposed devices could be useful as efficient sources of spin-polarized electron currents for research on spintronics and development of practical spintronic devices.

  16. Interplay between spin polarization and color superconductivity in high density quark matter

    DEFF Research Database (Denmark)

    Tsue, Yasuhiko; da Providência, João; Providência, Constança

    2013-01-01

    Here, it is suggested that a four-point interaction of the tensor type may lead to spin polarization in quark matter at high density. It is found that the two-flavor superconducting phase and the spin polarized phase correspond to distinct local minima of a certain generalized thermodynamical...... potential. It follows that a transition from one to the other phase occurs, passing through true minima with both a spin polarization and a color superconducting gap. It is shown that the quark spin polarized phase is realized at rather high density, while the two-flavor color superconducting phase...

  17. RKKY interaction for the spin-polarized electron gas

    Science.gov (United States)

    Valizadeh, Mohammad M.; Satpathy, Sashi

    2015-11-01

    We extend the original work of Ruderman, Kittel, Kasuya and Yosida (RKKY) on the interaction between two magnetic moments embedded in an electron gas to the case where the electron gas is spin-polarized. The broken symmetry of a host material introduces the Dzyaloshinsky-Moriya (DM) vector and tensor interaction terms, in addition to the standard RKKY term, so that the net interaction energy has the form ℋ = JS1 ṡS2 + D ṡS1 ×S2 + S1 ṡΓ ↔ṡS2. We find that for the spin-polarized electron gas, a nonzero tensor interaction Γ ↔ is present in addition to the scalar RKKY interaction J, while D is zero due to the presence of inversion symmetry. Explicit expressions for these are derived for the electron gas both in 2D and 3D and we show that the net magnetic interaction can be expressed as a sum of Heisenberg and Ising like terms. The RKKY interaction exhibits a beating pattern, caused by the presence of the two Fermi momenta kF↑ and kF↓, while the R-3 distance dependence of the original RKKY result for the 3D electron gas is retained. This model serves as a simple example of the magnetic interaction in systems with broken symmetry, which goes beyond the RKKY interaction.

  18. Railway Tunnel Clearance Inspection Method Based on 3D Point Cloud from Mobile Laser Scanning

    Science.gov (United States)

    Zhou, Yuhui; Wang, Shaohua; Mei, Xi; Yin, Wangling; Lin, Chunfeng; Mao, Qingzhou

    2017-01-01

    Railway tunnel clearance is directly related to the safe operation of trains and upgrading of freight capacity. As more and more railway are put into operation and the operation is continuously becoming faster, the railway tunnel clearance inspection should be more precise and efficient. In view of the problems existing in traditional tunnel clearance inspection methods, such as low density, slow speed and a lot of manual operations, this paper proposes a tunnel clearance inspection approach based on 3D point clouds obtained by a mobile laser scanning system (MLS). First, a dynamic coordinate system for railway tunnel clearance inspection has been proposed. A rail line extraction algorithm based on 3D linear fitting is implemented from the segmented point cloud to establish a dynamic clearance coordinate system. Second, a method to seamlessly connect all rail segments based on the railway clearance restrictions, and a seamless rail alignment is formed sequentially from the middle tunnel section to both ends. Finally, based on the rail alignment and the track clearance coordinate system, different types of clearance frames are introduced for intrusion operation with the tunnel section to realize the tunnel clearance inspection. By taking the Shuanghekou Tunnel of the Chengdu–Kunming Railway as an example, when the clearance inspection is carried out by the method mentioned herein, its precision can reach 0.03 m, and difference types of clearances can be effectively calculated. This method has a wide application prospects. PMID:28880232

  19. Railway Tunnel Clearance Inspection Method Based on 3D Point Cloud from Mobile Laser Scanning.

    Science.gov (United States)

    Zhou, Yuhui; Wang, Shaohua; Mei, Xi; Yin, Wangling; Lin, Chunfeng; Hu, Qingwu; Mao, Qingzhou

    2017-09-07

    Railway tunnel clearance is directly related to the safe operation of trains and upgrading of freight capacity. As more and more railway are put into operation and the operation is continuously becoming faster, the railway tunnel clearance inspection should be more precise and efficient. In view of the problems existing in traditional tunnel clearance inspection methods, such as low density, slow speed and a lot of manual operations, this paper proposes a tunnel clearance inspection approach based on 3D point clouds obtained by a mobile laser scanning system (MLS). First, a dynamic coordinate system for railway tunnel clearance inspection has been proposed. A rail line extraction algorithm based on 3D linear fitting is implemented from the segmented point cloud to establish a dynamic clearance coordinate system. Second, a method to seamlessly connect all rail segments based on the railway clearance restrictions, and a seamless rail alignment is formed sequentially from the middle tunnel section to both ends. Finally, based on the rail alignment and the track clearance coordinate system, different types of clearance frames are introduced for intrusion operation with the tunnel section to realize the tunnel clearance inspection. By taking the Shuanghekou Tunnel of the Chengdu-Kunming Railway as an example, when the clearance inspection is carried out by the method mentioned herein, its precision can reach 0.03 m, and difference types of clearances can be effectively calculated. This method has a wide application prospects.

  20. Selective scanning tunneling microscope light emission from rutile phase of VO2.

    Science.gov (United States)

    Sakai, Joe; Kuwahara, Masashi; Hotsuki, Masaki; Katano, Satoshi; Uehara, Yoichi

    2016-09-28

    We observed scanning tunneling microscope light emission (STM-LE) induced by a tunneling current at the gap between an Ag tip and a VO2 thin film, in parallel to scanning tunneling spectroscopy (STS) profiles. The 34 nm thick VO2 film grown on a rutile TiO2 (0 0 1) substrate consisted of both rutile (R)- and monoclinic (M)-structure phases of a few 10 nm-sized domains at room temperature. We found that STM-LE with a certain photon energy of 2.0 eV occurs selectively from R-phase domains of VO2, while no STM-LE was observed from M-phase. The mechanism of STM-LE from R-phase VO2 was determined to be an interband transition process rather than inverse photoemission or inelastic tunneling processes.

  1. Transient measurements with an ultrafast scanning tunneling microscope on semiconductor surfaces

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1998-01-01

    We demonstrate: the use of an ultrafast scanning tunneling microscope on a semiconductor surface. Laser-induced transient signals with 1.8 ps rise time are detected, The investigated sample is a low-temperature grown GaAs layer plated on a sapphire substrate with a thin gold layer that serves as st...... by the nonuniform carrier density created by the absorption of the light (photo Dember effect). The transient depends in sign and in shape on the direction of optical excitation. This signal is the dominating transient in tunneling mode. The signals are explained by a capacitive coupling across the tunneling gap...

  2. Note: Development of a wideband amplifier for cryogenic scanning tunneling microscopy

    Science.gov (United States)

    Zhang, Chao; Jeon, Hoyeon; Oh, Myungchul; Lee, Minjun; Kim, Sungmin; Yi, Sunwouk; Lee, Hanho; Zoh, Inhae; Yoo, Yongchan; Kuk, Young

    2017-06-01

    A wideband cryogenic amplifier has been developed for low temperature scanning tunneling microscopy. The amplifier consisting of a wideband complementary metal oxide semiconductor field effect transistors operational amplifier together with a feedback resistor of 100 kΩ and a capacitor is mounted within a 4 K Dewar. This amplifier has a wide bandwidth and is successfully applied to scanning tunneling microscopy applications at low temperatures down to ˜7 K. The quality of the designed amplifier is validated by high resolution imaging. More importantly, the amplifier has also proved to be capable of performing scanning tunneling spectroscopy measurements, showing the detection of the Shockley surface state of the Au(111) surface and the superconducting gap of Nb(110).

  3. Development of a 3D modeling algorithm for tunnel deformation monitoring based on terrestrial laser scanning

    Directory of Open Access Journals (Sweden)

    Xiongyao Xie

    2017-03-01

    Full Text Available Deformation monitoring is vital for tunnel engineering. Traditional monitoring techniques measure only a few data points, which is insufficient to understand the deformation of the entire tunnel. Terrestrial Laser Scanning (TLS is a newly developed technique that can collect thousands of data points in a few minutes, with promising applications to tunnel deformation monitoring. The raw point cloud collected from TLS cannot display tunnel deformation; therefore, a new 3D modeling algorithm was developed for this purpose. The 3D modeling algorithm includes modules for preprocessing the point cloud, extracting the tunnel axis, performing coordinate transformations, performing noise reduction and generating the 3D model. Measurement results from TLS were compared to the results of total station and numerical simulation, confirming the reliability of TLS for tunnel deformation monitoring. Finally, a case study of the Shanghai West Changjiang Road tunnel is introduced, where TLS was applied to measure shield tunnel deformation over multiple sections. Settlement, segment dislocation and cross section convergence were measured and visualized using the proposed 3D modeling algorithm.

  4. Direct injection of spin-polarized carriers across YBa 2 Cu 3 O 7- ...

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 58; Issue 5-6. Direct injection of spin-polarized ... from the CMR layer is 38 mA. This clearly shows that spin-polarized quasiparticles injected from the CMR layer into the YBCO layer suppress the critical current of the superconductor via the pair-breaking phenomena.

  5. Laser driven source of spin polarized atomic deuterium and hydrogen

    International Nuclear Information System (INIS)

    Poelker, M.; Coulter, K.P.; Holt, R.J.

    1993-01-01

    Optical pumping of potassium atoms in the presence of a high magnetic field followed by spin exchange collisions with deuterium (hydrogen) is shown to yield a high flux of spin polarized atomic deuterium (hydrogen). The performance of the laser driven source has been characterized as a function of deuterium (hydrogen) flow rate, potassium density, pump laser power, and magnetic field. Under appropriate conditions, the authors have observed deuterium atomic polarization as high as 75% at a flow rate 4.2x10 17 atoms/second. Preliminary results suggest that high nuclear polarizations are obtained in the absence of weak field rf transitions as a result of a spin temperature distribution that evolves through frequent H-H (D-D) collisions

  6. ESR and related experiments in spin-polarized atomic hydrogen

    International Nuclear Information System (INIS)

    Yperen, G.H. van.

    1984-01-01

    This thesis deals with some experiments in (gaseous) spin-polarized atomic hydrogen. One uses the expression 'stabilized' atomic hydrogen, meaning that by choosing suitable conditions one can suppress the tendency of atoms to recombine into H 2 molecules, such that the lifetime of the atomic state is extended by many orders of magnitude. Research is focused at the study of processes that determine the decay rate of polarized H samples, with the ultimate goal of preparing samples of sufficiently high density and at low enough temperature to observe experimentally the behaviour of the (degenerate) quantum gas. ESR (Electron Spin Resonance) appears to be a very suitable measurement technique to study the properties of polarized H. This work describes the introduction of ESR as detection technique, and the first results of an experiment in polarized H using this technique. (orig.)

  7. Microscopic theory of fully spin-polarized /sup 3/He

    Energy Technology Data Exchange (ETDEWEB)

    Glyde, H.R.; Hernadi, S.I.

    1983-01-01

    The ground state energy (E), Landau parameters (F) and single particle energy spectrum (epsilon(kappa) and m/sup */) in fully spin polarized liquid /sup 3/He (/sup 3/He) are calculated directly from the bare interatomic potential within the Galitskii-Feynmann T-matrix and Hartree-Fock (GFHF) approximations. The E agrees well with variational calculations, the F with model calculations and the epsilon(kappa) and m/sup */ with results expected from nuclear matter. This suggests the effective interaction in /sup 3/He is dominated by hard core repulsion and Fermi statistics and that these components of the full interaction can be well described from first principles by a GF T-matrix. 36 references, 3 figures, 1 table.

  8. Induced spin polarization effect in graphene by ferromagnetic nanocontact

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Sumit; Saha, Shyamal K., E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2015-03-07

    Chemically synthesized graphene contains large number of defects which act as localized spin moments at the defect sites. Cobalt nanosheets of variable thickness are grown on graphene surface to investigate spin/magnetotransport through graphene sheets containing large number of localized spins. Negative magnetoresistance (MR) is observed over the entire temperature range (5–300 K) for thin cobalt sheets, while a cross-over from negative to positive MR with increasing temperature is noticed for thicker cobalt sheets. The observed MR results are explained on the basis of recently reported spin polarization effect in graphene due to the presence of ferromagnetic atoms on the surface considering a spin valve like Co/graphene/Co nanostructures.

  9. Scanning tunneling microscopy of initial nitridation processes on oxidized Si(100) surface with radical nitrogen

    CERN Document Server

    Takahashi, R; Ikeda, H; Sakashita, M; Sakai, A; Yasuda, Y; Nakatsuka, O; Zaima, S

    2003-01-01

    We have investigated the initial nitridation processes on oxidized Si(100) with radical nitrogen at a substrate temperature of 850degC using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). It is found that the thin oxide layer suppresses the changes of original Si step structures during nitridation, and this effect critically depends on the growth conditions of the oxide layer. Comparison of the nitride island morphology to the case of the clean surface suggests that the migration of the precursor during nitridation is suppressed by the oxygen in the layer. (author)

  10. Scanning tunneling microscopy I general principles and applications to clean and adsorbate-covered surfaces

    CERN Document Server

    Wiesendanger, Roland

    1992-01-01

    Scanning Tunneling Microscopy I provides a unique introduction to a novel and fascinating technique that produces beautiful images of nature on an atomic scale. It is the first of three volumes that together offer a comprehensive treatment of scanning tunneling microscopy, its diverse applications, and its theoretical treatment. In this volume the reader will find a detailed description of the technique itself and of its applications to metals, semiconductors, layered materials, adsorbed molecules and superconductors. In addition to the many representative results reviewed, extensive references to original work will help to make accessible the vast body of knowledge already accumulated in this field.

  11. Low Temperature Scanning Tunneling Spectroscopy of isolated Mn12-Ph Single Molecule Magnets

    Science.gov (United States)

    Reaves, K.; Han, P.; Iwaya, K.; Hitosugi, T.; Packwood, D.; Katzgraber, H. G.; Zhao, H.; Dunbar, K. R.; Kim, K.; Teizer, W.

    2015-03-01

    We study Mn12O12(C6H5COO)16(H2O)4 (Mn12-Ph) single-molecule magnets on a Cu(111) surface using scanning tunneling microscopy and scanning tunneling spectroscopy at cryogenic temperatures (T a strong bias voltage dependence within the molecular interior. The qualitative features of these I vs.V curves differ by spatial location in several intriguing ways (e.g. fixed junction impedance with increasing bias voltages). We explore these normalized I vs. V curves and present a phenomenological explanation for the observed behaviors, corresponding to the physical and electronic structure within the molecule. Funding from WPI-AIMR.

  12. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  13. Scanning tunneling spectroscopy of CdSe nanocrystals covalently bound to GaAs

    DEFF Research Database (Denmark)

    Walzer, K.; Marx, E.; Greenham, N.C.

    2003-01-01

    We present scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements of CdSe nanocrystals covalently attached to doped GaAs substrates using monolayers of 1,6-hexanedithiol. STM measurements showed the formation of stable, densely packed, homogeneous monolayers...... and the bands in the substrate which are bent under the influence of the strong electric field between the closely separated semiconductor substrate and STM tip. The polarity of the forward bias direction is determined by the alignment of the CdSe electronic states with the semiconductor bands. (C) 2003...

  14. Optically pumped electron spin polarized targets for use in the production of polarized ion beams

    International Nuclear Information System (INIS)

    Anderson, L.W.

    1979-01-01

    The production of relatively dense electron spin polarized alkali metal vapor targets by optical pumping with intense cw dye lasers is discussed. The target density and electron spin polarization depend on the dye laser intensity and bandwidth, the magnetic field at the target, and the electron spin depolarization time. For example in a magnetic field of 1.5 x 10 3 G, and using 1 W dye laser with a bandwidth of 10 10 Hz one can construct an electron spin polarized Na vapor target with a target thickness of 1.6 x 10 13 atoms/cm 2 and an average electron spin polarization of about 90% even though the Na atoms are completely depolarized at every wall collision. Possible uses of the electron spin polarized targets for the production of intense beams of polarized H - or 3 He - ions are discussed. (orig.)

  15. Electron ionization and spin polarization control of Fe atom adsorbed graphene irradiated by a femtosecond laser

    International Nuclear Information System (INIS)

    Yu, Dong; Jiang, Lan; Wang, Feng; Li, Xin; Qu, Liangti; Lu, Yongfeng

    2015-01-01

    We investigate the structural properties and ionized spin electrons of an Fe–graphene system, in which the time-dependent density functional theory (TDDFT) within the generalized gradient approximation is used. The electron dynamics, including electron ionization and ionized electron spin polarization, is described for Fe atom adsorbed graphene under femtosecond laser irradiation. The theoretical results show that the electron ionization and ionized electron spin polarization are sensitive to the laser parameters, such as the incident angle and the peak intensity. The spin polarization presents the maximum value under certain laser parameters, which may be used as a source of spin-polarized electrons. - Highlights: • The structural properties of Fe–graphene system are investigated. • The electron dynamics of Fe–graphene system under laser irradiation are described. • The Fe–graphene system may be used as a source of spin-polarized electrons

  16. Imaging by Electrochemical Scanning Tunneling Microscopy and Deconvolution Resolving More Details of Surfaces Nanomorphology

    DEFF Research Database (Denmark)

    Andersen, Jens Enevold Thaulov

    Upon imaging, electrochemical scanning tunneling microscopy (ESTM), scanning electrochemical micro-scopy (SECM) and in situ STM resolve information on electronic structures and on surface topography. At very high resolution, imaging processing is required, as to obtain information that relates...... to crystallographic-surface structures. Within the wide range of new technologies, those images surface features, the electrochemical scanning tunneling microscope (ESTM) provides means of atomic resolution where the tip participates actively in the process of imaging. Two metallic surfaces influence ions trapped...... of the characteristic details of the images. A large proportion of the observed noise may be explained by the scanning actions of the feedback circuitry while a minor fraction of the image details may be explained by surface drift phenomena. As opposed to the method of deconvolution, conventional methods of filtering...

  17. Local crystallography analysis for atomically resolved scanning tunneling microscopy images

    International Nuclear Information System (INIS)

    Lin, Wenzhi; Li, Qing; Belianinov, Alexei; Gai, Zheng; Baddorf, Arthur P; Pan, Minghu; Jesse, Stephen; Kalinin, Sergei V; Sales, Brian C; Sefat, Athena

    2013-01-01

    Scanning probe microscopy has emerged as a powerful and flexible tool for atomically resolved imaging of surface structures. However, due to the amount of information extracted, in many cases the interpretation of such data is limited to being qualitative and semi-quantitative in nature. At the same time, much can be learned from local atom parameters, such as distances and angles, that can be analyzed and interpreted as variations of local chemical bonding, or order parameter fields. Here, we demonstrate an iterative algorithm for indexing and determining atomic positions that allows the analysis of inhomogeneous surfaces. This approach is further illustrated by local crystallographic analysis of several real surfaces, including highly ordered pyrolytic graphite and an Fe-based superconductor FeTe 0.55 Se 0.45 . This study provides a new pathway to extract and quantify local properties for scanning probe microscopy images. (paper)

  18. In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

    2003-01-01

    Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...

  19. Surface x-ray scattering and scanning tunneling microscopy studies at the Au(111) electrode

    International Nuclear Information System (INIS)

    Ocko, B.M.; Magnussen, O.M.; Wang, J.X.; Adzic, R.R.

    1993-01-01

    This chapter reviews Surface X-ray Scattering and Scanning Tunneling Microscopy results carried out at the Au(111) surface under electrochemical conditions. Results are presented for the reconstructed surface, and for bromide and thallium monolayers. These examples are used to illustrate the complementary nature of the techniques

  20. Quasi interference of perpendicularly polarized guided modes observed with a photon scanning tunneling microscope

    NARCIS (Netherlands)

    Balistreri, M.L.M.; Driessen, A.; Korterik, Jeroen P.; Kuipers, L.; van Hulst, N.F.

    2000-01-01

    The simultaneous detection of TE- as well as TM-polarized light with a photon scanning tunneling microscope leads to a quasi- interference pattern of these mutually perpendicular polarized fields. This interference pattern has been observed in the optical field distribution as a function of both

  1. The study of electrical conductivity of DNA molecules by scanning tunneling spectroscopy

    Science.gov (United States)

    Sharipov, T. I.; Bakhtizin, R. Z.

    2017-10-01

    An interest to the processes of charge transport in DNA molecules is very high, due to perspective of their using in nanoelectronics. The original sample preparation for studying electrical conductivity of DNA molecules by scanning tunneling spectroscopy has been proposed and tested. The DNA molecules immobilized on gold surface have been imaged clearly and their current-voltage curves have been measured.

  2. Scanning tunneling spectroscopy on neutron irradiated MgB2 thin films

    International Nuclear Information System (INIS)

    Di Capua, Roberto; Salluzzo, Marco; Vaglio, Ruggero; Ferdeghini, Carlo; Ferrando, Valeria; Putti, Marina; Xi Xiaoxing; Aebersold, Hans U.

    2007-01-01

    Neutron irradiation was performed on MgB 2 thin films grown by hybrid physical chemical vapor deposition. Samples irradiated with different neutron fluences, having different critical temperatures, were studied by scanning tunneling spectroscopy in order to investigate the effect of the introduced disorder on the superconducting and spectroscopic properties. A monotonic increase of the π gap with increasing disorder was found

  3. Scanning tunneling spectroscopy on neutron irradiated MgB{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Di Capua, Roberto [University of Napoli and CNR-INFM/Coherentia, Via Cinthia, Naples I-80126 (Italy)], E-mail: rdicapua@na.infn.it; Salluzzo, Marco; Vaglio, Ruggero [University of Napoli and CNR-INFM/Coherentia, Via Cinthia, Naples I-80126 (Italy); Ferdeghini, Carlo [CNR-INFM/LAMIA, Via Dodecaneso 33, Genova I-16146 (Italy); Ferrando, Valeria [CNR-INFM/LAMIA, Via Dodecaneso 33, Genova I-16146 (Italy); Pennsylvania State University, University Park, PA 16802 (United States); Putti, Marina [CNR-INFM/LAMIA, Via Dodecaneso 33, Genova I-16146 (Italy); Xi Xiaoxing [Pennsylvania State University, University Park, PA 16802 (United States); Aebersold, Hans U. [Paul Scherrer Institut, Villigen CH-5232 (Switzerland)

    2007-09-01

    Neutron irradiation was performed on MgB{sub 2} thin films grown by hybrid physical chemical vapor deposition. Samples irradiated with different neutron fluences, having different critical temperatures, were studied by scanning tunneling spectroscopy in order to investigate the effect of the introduced disorder on the superconducting and spectroscopic properties. A monotonic increase of the {pi} gap with increasing disorder was found.

  4. Covalently Immobilised Cytochrome C Imaged by In Situ Scanning Tunnelling Microscopy

    DEFF Research Database (Denmark)

    Andersen, Jens Enevold Thaulov; Olesen, Klaus G.; Danilov, Alexey I.

    1997-01-01

    In situ scanning tunnelling microscopy (STM) imaging of cytochrome c (cyt c) on polycrystalline Pt surfaces and on Au(lll) was achieved first by covalent immobilisation of 3-aminopropyltriethoxysilane (3-APTS) brought to react with oxide present on the Pt surfaces. Covalently bound 3-APTS forms...

  5. Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1998-01-01

    Summary form only given. We demonstrate the use of a ultrafast scanning tunnelling microscopes (USTM) for detecting laser-induced field transients on semiconductor layers. In principle, the instrument can detect transient field changes thus far observed as far-field THz radiation in the near...

  6. Polarization contrast in photon scanning tunnelling microscopy combined with atomic force microscopy

    NARCIS (Netherlands)

    Propstra, K.; Propstra, K.; van Hulst, N.F.

    1995-01-01

    Photon scanning tunnelling microscopy combined with atomic force microscopy allows simultaneous acquisition and direct comparison of optical and topographical images, both with a lateral resolution of about 30 nm, far beyond the optical diffraction limit. The probe consists of a modified

  7. Preparation of Chemically Etched Tips for Ambient Instructional Scanning Tunneling Microscopy

    Science.gov (United States)

    Zaccardi, Margot J.; Winkelmann, Kurt; Olson, Joel A.

    2010-01-01

    A first-year laboratory experiment that utilizes concepts of electrochemical tip etching for scanning tunneling microscopy (STM) is described. This experiment can be used in conjunction with any STM experiment. Students electrochemically etch gold STM tips using a time-efficient method, which can then be used in an instructional grade STM that…

  8. Simultaneous topographic and elemental chemical and magnetic contrast in scanning tunneling microscopy

    Science.gov (United States)

    Rose, Volker; Preissner, Curt A; Hla, Saw-Wai; Wang, Kangkang; Rosenmann, Daniel

    2014-09-30

    A method and system for performing simultaneous topographic and elemental chemical and magnetic contrast analysis in a scanning, tunneling microscope. The method and system also includes nanofabricated coaxial multilayer tips with a nanoscale conducting apex and a programmable in-situ nanomanipulator to fabricate these tips and also to rotate tips controllably.

  9. Observation of a Ag protrusion on a Ag2S island using a scanning tunneling microscope

    Directory of Open Access Journals (Sweden)

    Takeo Ohno

    2015-01-01

    Full Text Available A silver sulfide (Ag2S island as an ionic conductor in resistive switching memories was formed and a protrusion of silver from the Ag2S formed by an electrochemical reaction was observed using a scanning tunneling microscope.

  10. A simple, ultrahigh vacuum compatible scanning tunneling microscope for use at variable temperatures

    NARCIS (Netherlands)

    Mugele, Friedrich Gunther; Kloos, Ch.; Leiderer, P.; Moller, R.

    1996-01-01

    We present the construction of a very compact scanning tunneling microscope (STM) which can be operated at temperatures between 4 and 350 K. The tip and a tiny tip holder are the only movable parts, whereas the sample and the piezoscanner are rigidly attached to the body of the STM. This leads to an

  11. Adsorption of Cu phthalocyanine on Pt modified Ge(001): A scanning tunneling microscopy study

    NARCIS (Netherlands)

    Saedi, A.; Berkelaar, Robin P.; Kumar, Avijit; Poelsema, Bene; Zandvliet, Henricus J.W.

    2010-01-01

    The adsorption configurations of copper phthalocyanine (CuPc) molecules on platinum-modified Ge(001) have been studied using scanning tunneling microscopy. After deposition at room temperature and cooling down to 77 K the CuPc molecules are still dynamic. However, after annealing at 550±50 K, the

  12. Scanning tunneling microscopy studies of thin foil x-ray mirrors

    DEFF Research Database (Denmark)

    Christensen, Finn Erland; Besenbacher, Flemming; Garnaes, Jorgen

    1990-01-01

    In this paper scanning tunneling microscopy (STM) measurements of x-ray mirrors are presented. The x-ray mirrors are 0.3 mm thick dip-lacquered aluminum foils coated with gold by evaporation, as well as state-of-the-art polished surfaces coated with gold, platinum, or iridium. The measurements...

  13. Perfect switching of the spin polarization in a ferromagnetic gapless graphene/superconducting gapped graphene junction

    International Nuclear Information System (INIS)

    Soodchomshom, Bumned; Tang, I-Ming; Hoonsawat, Rassmidara

    2010-01-01

    With the fabrication of gapped graphene, interest in the tunneling spectroscopy in graphene-based FG/SG junctions in which one side consists of a gapless ferro-magnetic graphene (FG) and the other side, of a gapped superconducting graphene (SG) has arisen. The carriers in the gapless (gapped) graphene are 2D relativistic particles having an energy spectrum given by E=√(h 2 v F 2 k 2 +(mv F 2 ) 2 ) (where mv F 2 is the gap and v F is the Fermi velocity). The spin currents in this FG/SG junction are obtained within the framework of the extended Blonder-Tinkham-Klapwijk (BTK) formalism. The effects of the superconducting energy gap in SG, of the gap mv F 2 which opened in the superconducting graphene, of the exchange field in FG, of the spin-dependent specular Andreev reflection, of the effective Fermi energy (E FF ) of FG and of the bias voltage across the junction (V) are simulated. It is seen that by adjusting E FF or V, the spin polarization (defined as SP(%) = 100% x (G ↑ - G ↓ )/(G ↑ + G ↓ )) can be switched from a pure spin up (SP = +100%) state to pure spin down (SP = -100%) state.

  14. Spin-polarization reversal at the interface between benzene and Fe(100)

    KAUST Repository

    Goumri-Said, Souraya

    2013-01-03

    The spin-polarization at the interface between Fe(100) and a benzene is investigated theoretically using density functional theory for two positions of the organic molecule: planar and perpendicular with respect to the substrate. The electronic and magnetic properties as well as the spin-polarization close to the Fermi level strongly depend on the benzene position on the iron surface. An inversion of the spin-polarization is induced by p-d hybridization and charge transfer from the iron to the carbon sites in both configurations.

  15. Nuclear reactivity indices in the context of spin polarized density functional theory

    International Nuclear Information System (INIS)

    Cardenas, Carlos; Lamsabhi, Al Mokhtar; Fuentealba, Patricio

    2006-01-01

    In this work, the nuclear reactivity indices of density functional theory have been generalized to the spin polarized case and their relationship to electron spin polarized indices has been established. In particular, the spin polarized version of the nuclear Fukui function has been proposed and a finite difference approximation has been used to evaluate it. Applications to a series of triatomic molecules demonstrate the ability of the new functions to predict the geometrical changes due to a change in the spin multiplicity. The main equations in the different ensembles have also been presented

  16. Micromagnetic investigation of the dynamics of magnetization switching induced by a spin polarized current

    Science.gov (United States)

    Lee, Kyung-Jin; Dieny, Bernard

    2006-03-01

    Using micromagnetic modeling, we tested a prediction of single-domain spin-torque theory which switching current density depends only weakly on magnetic cell size. The switching time and current density are strongly affected by the cell size for low spin polarization. Larger samples with a small length-to-width ratio and small spin polarization can exhibit a nonmonotonous dependence of switching time on current. Excitation of incoherent spin waves caused by the circular Oersted field due to the current is responsible for this nonmonotonous dependence. However, the magnetic dynamics recovers a single-domain-like behavior when the spin polarization is high and/or the cell size is small.

  17. Imaging by Electrochemical Scanning Tunneling Microscopy and Deconvolution Resolving More Details of Surfaces Nanomorphology

    DEFF Research Database (Denmark)

    Andersen, Jens Enevold Thaulov

    Upon imaging, electrochemical scanning tunneling microscopy (ESTM), scanning electrochemical micro-scopy (SECM) and in situ STM resolve information on electronic structures and on surface topography. At very high resolution, imaging processing is required, as to obtain information that relates...... to crystallographic-surface structures. Within the wide range of new technologies, those images surface features, the electrochemical scanning tunneling microscope (ESTM) provides means of atomic resolution where the tip participates actively in the process of imaging. Two metallic surfaces influence ions trapped.......g., nanoelectronics and single-molecule probing. In principle, the ESTM is capable of sub-atomic resolution but many details at this level of magnification need further treatment of recorded data before real information is obtained. Deconvolution of the data according to the instrument response may explain some...

  18. Probing Nanoscale Electronic and Magnetic Interaction with Scanning Tunneling Spectroscopy

    DEFF Research Database (Denmark)

    Bork, Jakob

    This thesis is concerned with fundamental research into electronic and magnetic interaction on the nanoscale. From small metallic and magnetic islands and layers to single atoms. The research revolves around magnetic interaction probed through the spectroscopic capabilities of the scanning....... This is related to research in correlated electron materials such as studies of phase transitions in heavy fermion compounds and magnetic interaction in spintronic research. The capping of cobalt islands on Cu(111) with silver is investigated with STM and photoemission spectroscopy. It is shown that at low...... coverage the silver preferably nucleates on top of the bilayer high cobalt islands compared to directly on the Cu(111) substrate. Furthermore, the silver forms a combination of a reconstruction and a Moire pattern which is investigated with low-energy electron diraction and spectroscopic STM mapping at 6...

  19. Field-Induced Deformation as a Mechanism for Scanning Tunneling Microscopy Based Nanofabrication

    DEFF Research Database (Denmark)

    Hansen, Ole; Ravnkilde, Jan Tue; Quaade, Ulrich

    1998-01-01

    The voltage between tip and sample in a scanning tunneling microscope (STM) results in a large electric field localized near the tip apex. The mechanical stress due to this field can cause appreciable deformation of both tip and sample on the scale of the tunnel gap. We derive an approximate...... analytical expression for this deformation and confirm the validity of the result by comparison with a finite element analysis. We derive the condition for a field-induced jump to contact of tip and sample and show that this agrees well with experimental results for material transfer between tip and sample...... by voltage pulsing in ultrahigh vacuum....

  20. Dopant migration in silicon during implantation/annealing measured by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hessel, H.E.; Memmert, U.; Behm, R.J. (Univ. Muenchen (West Germany)); Cerva, H. (Siemens Research Lab., Muenchen (West Germany))

    In this paper spatial correlation between the lateral distribution of the doping type and the former implantation mask edge was investigated by scanning tunneling microscopy (STM) measurements. The position of the former mask edge was determined from surface steps resolved by STM topography measurements. Current imaging tunneling spectroscopy (CITS) data recorded simultaneously allowed to detect the transition from a high doping level with an ohmic I-V curve to a lower doping level displaying a Schottky barrier behavior. The influence of different annealing treatments on the position of this transition was investigated.

  1. Spin-polarized semiconductor induced by magnetic impurities in graphene

    Science.gov (United States)

    Daghofer, Maria

    2011-03-01

    Magnetic impurities adsorbed on graphene sheets are coupled antiferromangetically via the itinerant electrons in the graphene. We study this interaction and its impact on the electrons' spectral density by use of unbiased Monte-Carlo simulations. The antiferromagnetic order breaks the symmetry between the sublattices, and a gap for the itinerant electrons opens. Our simulations show that the itinerant states below and above the gap are not dispersionless states trapped by the impurities, but are instead mobile states with a large dispersion. We compare various scenarios for the impurity distribution and find that random doping produces a standard semiconductor. If, on the other hand, all or most of the impurities are localized in the same sublattice, the spin degeneracy is lifted and the conduction band becomes spin-polarized. We also discuss the properties of edge states at edges or magnetic domain boundaries. M.~Daghofer, N.~Zheng, A.~Moreo; Phys.~Rev.~B 82, 121405(R) (2010) Supported by the DFG under the Emmy-Noether Program, and the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, U.S. DOE.

  2. Spin polarization and magnetic effects in radical reactions

    International Nuclear Information System (INIS)

    Salikhov, K.M.; Molin, Yu.N.; Sagdeev, R.Z.; Buchachenko, A.L.

    1984-01-01

    Studies on the effects of chemically induced dynamic nuclear and electron polarizations (CIDNP and CIDEP), and magnetic effects in radical reactions, have given rise to a new rapidly-progressing field of chemical physics. It came into being about ten years ago and has been attracting the ever-growing attention of researchers in related areas. The present book is a fairly all-embracing review of the state of affairs in this field. The book presents the physical background (both theoretical and experimental) of CIDNP and CIDEP, of the effects of an external magnetic field and magnetic nuclear moment (magnetic isotope effects) on radical reactions in solutions. Great attention has been paid to the application of chemical spin polarization and magnetic effects to solving various problems of chemical kinetics, structural chemistry, molecular physics, magnetobiology, and radiospectroscopy. The book will be useful for physicists, chemists and biologists employing CIDNP, CIDEP and magnetic effects in their investigations, as well as for researchers in related fields of chemical physics. The book can be also recommended for postgraduates and senior undergraduate students. (Auth.)

  3. Spin-polarized charge transport in HgTe/CdTe quantum well topological insulator under a ferromagnetic metal strip

    Science.gov (United States)

    Wu, Zhenhua; Luo, Kun; Yu, Jiahan; Wu, Xiaobo; Lin, Liangzhong

    2018-02-01

    Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and the Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current from unpolarized states can be filtered to fully spin polarized states. These features offer us an efficient way to control charge/spin transport in a HgTe/CdTe quantum well, and pave a way to construct the nanoelectronic devices utilizing the topological edge states.

  4. Combined frequency modulated atomic force microscopy and scanning tunneling microscopy detection for multi-tip scanning probe microscopy applications

    International Nuclear Information System (INIS)

    Morawski, Ireneusz; Spiegelberg, Richard; Korte, Stefan; Voigtländer, Bert

    2015-01-01

    A method which allows scanning tunneling microscopy (STM) tip biasing independent of the sample bias during frequency modulated atomic force microscopy (AFM) operation is presented. The AFM sensor is supplied by an electronic circuit combining both a frequency shift signal and a tunneling current signal by means of an inductive coupling. This solution enables a control of the tip potential independent of the sample potential. Individual tip biasing is specifically important in order to implement multi-tip STM/AFM applications. An extensional quartz sensor (needle sensor) with a conductive tip is applied to record simultaneously topography and conductivity of the sample. The high resonance frequency of the needle sensor (1 MHz) allows scanning of a large area of the surface being investigated in a reasonably short time. A recipe for the amplitude calibration which is based only on the frequency shift signal and does not require the tip being in contact is presented. Additionally, we show spectral measurements of the mechanical vibration noise of the scanning system used in the investigations

  5. Spin-polarized ballistic conduction through correlated Au-NiMnSb-Au heterostructures

    KAUST Repository

    Morari, C.

    2017-11-20

    We examine the ballistic conduction through Au-NiMnSb-Au heterostructures consisting of up to four units of the half-metallic NiMnSb in the scattering region, using density functional theory (DFT) methods. For a single NiMnSb unit the transmission function displays a spin polarization of around 50% in a window of 1eV centered around the Fermi level. By increasing the number of layers, an almost complete spin polarization of the transmission is obtained in this energy range. Supplementing the DFT calculations with local electronic interactions, of Hubbard-type on the Mn sites, leads to a hybridization between the interface and many-body states. The significant reduction of the spin polarization seen in the density of states is not apparent in the spin polarization of the conduction electron transmission, which suggests that the hybridized interface and many-body induced states are localized.

  6. A NEW APPROACH FOR SUBWAY TUNNEL DEFORMATION MONITORING: HIGH-RESOLUTION TERRESTRIAL LASER SCANNING

    Directory of Open Access Journals (Sweden)

    J. Li

    2012-07-01

    Full Text Available With the improvement of the accuracy and efficiency of laser scanning technology, high-resolution terrestrial laser scanning (TLS technology can obtain high precise points-cloud and density distribution and can be applied to high-precision deformation monitoring of subway tunnels and high-speed railway bridges and other fields. In this paper, a new approach using a points-cloud segmentation method based on vectors of neighbor points and surface fitting method based on moving least squares was proposed and applied to subway tunnel deformation monitoring in Tianjin combined with a new high-resolution terrestrial laser scanner (Riegl VZ-400. There were three main procedures. Firstly, a points-cloud consisted of several scanning was registered by linearized iterative least squares approach to improve the accuracy of registration, and several control points were acquired by total stations (TS and then adjusted. Secondly, the registered points-cloud was resampled and segmented based on vectors of neighbor points to select suitable points. Thirdly, the selected points were used to fit the subway tunnel surface with moving least squares algorithm. Then a series of parallel sections obtained from temporal series of fitting tunnel surfaces were compared to analysis the deformation. Finally, the results of the approach in z direction were compared with the fiber optical displacement sensor approach and the results in x, y directions were compared with TS respectively, and comparison results showed the accuracy errors of x, y, z directions were respectively about 1.5 mm, 2 mm, 1 mm. Therefore the new approach using high-resolution TLS can meet the demand of subway tunnel deformation monitoring.

  7. Biaxial-stress-driven full spin polarization in ferromagnetic hexagonal chromium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Xiang-Bo; Li, Jun [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Liu, Bang-Gui, E-mail: bgliu@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190 (China)

    2017-03-15

    It is important to spintronics to achieve fully-spin-polarized magnetic materials that are stable and can be easily fabricated. Here, through systematical density-functional-theory investigations, we achieve high and even full spin polarization for carriers in the ground-state phase of CrTe by applying tensile biaxial stress. The resulting strain is tensile in the xy plane and compressive in the z axis. With the in-plane tensile strain increasing, the ferromagnetic order is stable against antiferromagnetic fluctuations, and a half-metallic ferromagnetism is achieved at an in-plane strain of 4.8%. With the spin-orbit coupling taken into account, the spin polarization is equivalent to 97% at the electronic transition point, and then becomes 100.0% at the in-plane strain of 6.0%. These make us believe that the full-spin-polarized ferromagnetism in this stable and easily-realizable hexagonal phase could be realized soon, and applied in spintronics. - Highlights: • Full spin polarization in the hexagonal ground-state phase of CrTe by biaxial stress. • The stress produces in-plane tensile strain and perpendicular compressive strain. • Reliable electronic structure is calculated with improved exchange functional. • Spin polarization is calculated with spin-orbit coupling taken into account.

  8. Fusion with highly spin polarized HD and D2

    International Nuclear Information System (INIS)

    Honig, A.; Letzring, S.; Skupsky, S.

    1993-01-01

    Our experimental efforts over the past 5 years have been aimed at cazrying out ICF shots with spin-polarized 0 fuel. We successfully prepared polarized 0 in HD, and solved the problems of loading target shells with our carefully prepared isotopic -rnixt.l.l?-es, polarizing them so that the 0 polarization remains metastably frozen-in for about half a day, and carrying out the various cold transfer requirements at Syracuse, where the target is prepared, and at Rochester, where the cold target is inserted fusion chamber. Upon shooting the accurately positioned unpolarized high density cold target, no neutron yield was observed. Inspection inside the OMEGA tank after the shot indicated the absence of neutron yield was dus to mal-timing or insufficient retraction rate of OMEGA'S fast shroud mechanism, resulting in interception of at least 20 of the 24 laser beams by the faulty shroud. In spits of this, all alements of the complex experiment we originally undertook have been successfully demonstrated, and the cold retrieval concepts and methods we developed are being utilized on the ICF upgrades at Rochester and at Livermore. In addition to the solution of the interface problems, we obtained novel results on polymer shell characteristics at low temperatures, and continuation of these experiments is c = ently supported by KLUP. Extensive additional mappings were ca=ied out of nuclear spin relaxation rates of H and D in solid HD in the temperature-magnetic field rangs of 0.01 to 4.2K and 0 - 13 Tesla. New phenomena were discovered, such as association of impurity clustering with very low temperature motion, and inequality of the growth-rate and decay-rate of the magnetization

  9. Fusion with highly spin polarized HD and D2

    International Nuclear Information System (INIS)

    Honig, A.; Letzring, S.; Skupsky, S.

    1993-01-01

    The experimental efforts over the past 5 years have been aimed at carrying out ICF shots with spin-polarized D fuel. The authors successfully prepared polarized D in HD, and solved the problems of loading target shells with their carefully prepared isotopic mixtures, polarizing them so that the D polarization remains metastably frozen-in for about half a day, and carrying out the various cold transfer requirements at Syracuse, where the target is prepared, and at Rochester, where the cold target is inserted into the OMEGA fusion chamber. A principal concern during this past year was overcoming difficulties encountered in maintaining the integrity of the fragile cold target during the multitude of cold-transfers required for the experiment. These difficulties arose from insufficient rigidity of the cold transfer systems, which were constrained to be of small diameter by the narrow central access bore of the dilution refrigerator, and were exacerbated by the multitude of required target shell manipulations between different environments, each with different coupling geometry, including target shell permeation, polarization, storage, transport, retrieval and insertion into OMEGA. The authors did solve all of these problems, and were able to position a cold, high density but unpolarized target with required precision in OMEGA. Upon shooting the accurately positioned unpolarized high density cold target, no neutron yield was observed. Inspection inside the OMEGA tank after the shot indicated the absence of neutron yield was due to mal-timing or insufficient retraction rate of OMEGA's fast shroud mechanism, resulting in interception of at least 20 of the 24 laser beams by the faulty shroud. In spite of this, all elements of the complex experiment the authors originally undertook have been successfully demonstrated, and the cold retrieval concepts and methods they developed are being utilized on the ICF upgrades at Rochester and at Livermore

  10. Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution.

    Science.gov (United States)

    Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland

    2010-07-23

    We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.

  11. Electrical detection of magnetic skyrmions by tunnelling non-collinear magnetoresistance

    Science.gov (United States)

    Hanneken, Christian; Otte, Fabian; Kubetzka, André; Dupé, Bertrand; Romming, Niklas; von Bergmann, Kirsten; Wiesendanger, Roland; Heinze, Stefan

    2015-12-01

    Magnetic skyrmions are localized non-collinear spin textures with a high potential for future spintronic applications. Skyrmion phases have been discovered in a number of materials and a focus of current research is to prepare, detect and manipulate individual skyrmions for implementation in devices. The local experimental characterization of skyrmions has been performed by, for example, Lorentz microscopy or atomic-scale tunnel magnetoresistance measurements using spin-polarized scanning tunnelling microscopy. Here we report a drastic change of the differential tunnel conductance for magnetic skyrmions that arises from their non-collinearity: mixing between the spin channels locally alters the electronic structure, which makes a skyrmion electronically distinct from its ferromagnetic environment. We propose this tunnelling non-collinear magnetoresistance as a reliable all-electrical detection scheme for skyrmions with an easy implementation into device architectures.

  12. Radio frequency scanning tunneling spectroscopy for single-molecule spin resonance.

    Science.gov (United States)

    Müllegger, Stefan; Tebi, Stefano; Das, Amal K; Schöfberger, Wolfgang; Faschinger, Felix; Koch, Reinhold

    2014-09-26

    We probe nuclear and electron spins in a single molecule even beyond the electromagnetic dipole selection rules, at readily accessible magnetic fields (few mT) and temperatures (5 K) by resonant radio-frequency current from a scanning tunneling microscope. We achieve subnanometer spatial resolution combined with single-spin sensitivity, representing a 10 orders of magnitude improvement compared to existing magnetic resonance techniques. We demonstrate the successful resonant spectroscopy of the complete manifold of nuclear and electronic magnetic transitions of up to ΔI(z)=±3 and ΔJ(z)=±12 of single quantum spins in a single molecule. Our method of resonant radio-frequency scanning tunneling spectroscopy offers, atom-by-atom, unprecedented analytical power and spin control with an impact on diverse fields of nanoscience and nanotechnology.

  13. Fingerprints of a position-dependent Fermi velocity on scanning tunnelling spectra of strained graphene

    Science.gov (United States)

    Oliva-Leyva, M.; Barrios-Vargas, J. E.; Wang, Chumin

    2018-02-01

    Nonuniform strain in graphene induces a position dependence of the Fermi velocity, as recently demonstrated by scanning tunnelling spectroscopy experiments. In this work, we study the effects of a position-dependent Fermi velocity on the local density of states (LDOS) of strained graphene, with and without the presence of a uniform magnetic field. The variation of LDOS obtained from tight-binding calculations is successfully explained by analytical expressions derived within the Dirac approach. These expressions also rectify a rough Fermi velocity substitution used in the literature that neglects the strain-induced anisotropy. The reported analytical results could be useful for understanding the nonuniform strain effects on scanning tunnelling spectra of graphene, as well as when it is exposed to an external magnetic field.

  14. Tip preparation for usage in an ultra-low temperature UHV scanning tunneling microscope

    Directory of Open Access Journals (Sweden)

    S. Ernst, S. Wirth, M. Rams, V. Dolocan and F. Steglich

    2007-01-01

    Full Text Available This work deals with the preparation and characterization of tungsten tips for the use in UHV low-temperature scanning tunneling microscopy and spectroscopy (STM and STS, respectively. These specific environments require in situ facilities for tip conditioning, for further sharpening of the tips, as well as for reliable tip characterization. The implemented conditioning methods include direct resistive annealing, annealing by electron bombardment, and self-sputtering with noble gas ions. Moreover, results from in situ tip characterization by field emission and STM experiments were compared to ex situ scanning electron microscopy. Using the so-prepared tips, high resolution STM images and tunneling spectra were obtained in a temperature range from ambient down to 350 mK, partially with applied magnetic field, on a variety of materials.

  15. Mono-Cycle Photonics and Optical Scanning Tunneling Microscopy Route to Femtosecond Ångstrom Technology

    CERN Document Server

    Yamashita, Mikio; Morita, Ryuji

    2005-01-01

    "Mono-Cycle Photonics and Optical Scanning Tunneling Microscopy" deals with both the ultrashort laser-pulse technology in the few- to mono-cycle region and the laser-surface-controlled scanning-tunneling microscopy (STM) extending into the spatiotemporal extreme technology. The former covers the theory of nonlinear pulse propagation beyond the slowly-varing-envelope approximation, the generation and active chirp compensation of ultrabroadband optical pulses, the amplitude and phase characterization of few- to mono-cycle pulses, and the feedback field control for the mono-cycle-like pulse generation. In addition, the wavelength-multiplex shaping of ultrabroadband pulse is described. The latter covers the CW-laser-excitation STM, the femtosecond-time-resolved STM and atomic-level surface phenomena controlled by femtosecond pulses.

  16. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  17. Theoretical analysis of a dual-probe scanning tunneling microscope setup on graphene

    DEFF Research Database (Denmark)

    Settnes, Mikkel; Power, Stephen R.; Petersen, Dirch Hjorth

    2014-01-01

    Experimental advances allow for the inclusion of multiple probes to measure the transport properties of a sample surface. We develop a theory of dual-probe scanning tunneling microscopy using a Green's function formalism, and apply it to graphene. Sampling the local conduction properties at finite...... to different scattering processes. We compute the conductance maps of graphene systems with different edge geometries or height fluctuations to determine the effects of nonideal graphene samples on dual-probe measurements. © 2014 American Physical Society....

  18. Plasmon modes in light emission from silver nanoparticles induced by a scanning tunneling microscope

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Charra, F.; Schull, G.; Pelant, Ivan

    2008-01-01

    Roč. 602, č. 1 (2008), s. 345-348 ISSN 0039-6028 R&D Projects: GA AV ČR IAA1010316; GA MŠk LC510; GA AV ČR IAA1010413 Institutional research plan: CEZ:AV0Z10100521 Keywords : scanning tunneling microscopy * photon emission * plasmons * silver nanoparticles Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.731, year: 2008

  19. Pulse Plating on Gold Surfaces Studied by In Situ Scanning Tunneling Microscopy

    DEFF Research Database (Denmark)

    Andersen, Jens Enevold Thaulov; Bech-Nielsen, Gregers; Møller, Per

    1994-01-01

    Deposition of bulk copper on thin film gold surfaces is carried out by computer-aided pulse plating. It is demonstrated that the morphology of the copper deposit can be studied by in situ scanning tunnelling microscopy both in potentiostatic experiments and in galvanostatic experiments. Optimized...... procedures for obtaining smooth deposits by pulse plating are explained in terms of a levelling effect. Possible non-faradaic processes observed in measurements with high frequency pulse plating are discussed....

  20. Scanning tunneling spectroscopy on heavy-fermion systems; Rastertunnelspektroskopie an Schwere-Fermionen-Systemen

    Energy Technology Data Exchange (ETDEWEB)

    Ernst, Stefan

    2011-06-24

    in the framework of this thesis different heavy-fermion systems were studied by means of scanning tunneling microscopy and spectroscopy. In the experiment two main topics existed. On the one hand the heavy-fermion superconductivity in the compounds CeCu{sub 2}Si{sub 2}, CeCoIn{sub 5}, and on the other hand the Kondo effect in the Kondo-lattice system YbRh{sub 2}Si{sub 2}.

  1. Radio-frequency scanning tunneling microscopy: Instrumentation and applications to physical measurements

    Science.gov (United States)

    Kemiktarak, Utku

    The scanning tunneling microscope (STM) relies upon localized electron tunneling between a sharp probe tip and a conducting sample to attain atomic-scale spatial resolution. Perhaps the most serious obstacle in front of realizing the full potential of the STM is its inadequate temporal resolution, limited by the bandwidth of STM current detectors (˜1 kHz). To overcome this limitation, we developed a radically new approach: we embedded the tunnel junction into an inductor-capacitor resonant circuit and measured the reflection of radio-frequency waves from this circuit. Our new apparatus, which we call a radio-frequency scanning tunneling microscope (Rf-STM), allowed us to achieve 100-fold bandwidth increase upon the state-of-the-art. The bandwidth increase resulted in a number of ultrafast and sensitive measurements in nanoscale systems. First, the large bandwidth of the Rf-STM allowed acquisition of surface topography images at high speeds. In a conventional STM scan, it takes from minutes to hours to create a typical image. As the circuit bandwidth increases, one can shorten this time considerably. We showed that the Rf-STM images, collected at a rate of 100 line/s, had comparable resolution to conventional STM images taken at a rate of 1 line/s. Second, we used the Rf-STM to perform broadband electronic noise measurements. Intrinsic current fluctuations in a tunnel junction, called shot noise, gives important in formation about electron transport mechanisms. We used shot noise measurements as an absolute calibration tool for Rf-STM. Conversely, we also demonstrated how the Rf-STM could be used as a local primary thermometer. Finally, using the Rf-STM, we established the very high displacement sensitivity of a tunnel displacement detector. On a driven micro-mechanical membrane, we detected the first ten mechanical resonances, ranging in frequency from 1 MHz to 3 MHz. We also measured the displacements of a Au surface shaken by a calibrated piezoelectric actuator

  2. Scanning tunnelling microscope light emission: Finite temperature current noise and over cut-off emission.

    Science.gov (United States)

    Kalathingal, Vijith; Dawson, Paul; Mitra, J

    2017-06-14

    The spectral distribution of light emitted from a scanning tunnelling microscope junction not only bears its intrinsic plasmonic signature but is also imprinted with the characteristics of optical frequency fluc- tuations of the tunnel current. Experimental spectra from gold-gold tunnel junctions are presented that show a strong bias (V b ) dependence, curiously with emission at energies higher than the quantum cut-off (eV b ); a component that decays monotonically with increasing bias. The spectral evolution is explained by developing a theoretical model for the power spectral density of tunnel current fluctuations, incorporating finite temperature contribution through consideration of the quantum transport in the system. Notably, the observed decay of the over cut-off emission is found to be critically associated with, and well explained in terms of the variation in junction conductance with V b . The investigation highlights the scope of plasmon-mediated light emission as a unique probe of high frequency fluctuations in electronic systems that are fundamental to the electrical generation and control of plasmons.

  3. Facile synthesis and electron transport properties of NiO nanostructures investigated by scanning tunneling microscopy

    Directory of Open Access Journals (Sweden)

    Govind Mallick

    2017-08-01

    Full Text Available Due to their unique chemical, thermal, electronic and photonic properties, low -dimensional transition metal oxides, especially NiO, have attracted great deal of attention for potential applications in a wide range of technologies, such as, sensors, electrochromic coatings and self-healing materials. However, their synthesis involves multi-step complex procedures that in addition to being expensive, further introduce impurities. Here we present a low cost facile approach to synthesize uniform size NiO nanoparticles (NPs from hydrothermally grown Ni(OH2. Detailed transmission electron microscopic analysis reveal the average size of NiO NPs to be around 29 nm. The dimension of NiO NP is also corroborated by the small area scanning tunneling microscope (STM measurements. Further, we investigate electron transport characteristics of newly synthesized Ni(OH2 and NiO nanoparticles on p-type Si substrate using scanning tunneling microscopy. The conductivity of Ni(OH2 and NiO are determined to be 1.46x10-3 S/cm and 2.37x10-5 S/cm, respectively. The NiO NPs exhibit a lower voltage window (∼0.7 V electron tunneling than the parent Ni(OH2.

  4. Molecular electronics of a single photosystem I reaction center: Studies with scanning tunneling microscopy and spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, I.; Lee, J.W.; Warmack, R.J.; Allison, D.P.; Greenbaum, E. [Oak Ridge National Lab., TN (United States)

    1995-03-14

    Thylakoids and photosystem I (PSI) reaction centers were imaged by scanning tunneling microscopy. The thylakoids were isolated from spinach chloroplasts, and PSI reaction centers were extracted from thylakoid membranes. Because thylakoids are relatively thick nonconductors, they were sputter-coated with Pd/Au before imaging. PSI photosynthetic centers and chemically platinized PSI were investigated without sputter-coating. They were mounted on flat gold substrates that had been treated with mercaptoacetic acid to help bind the proteins. With tunneling spectroscopy, the PSI centers displayed a semiconductor-like response with a band gap of 1.8 eV. Lightly platinized (platinized for 1 hr) centers displayed diode-like conduction that resulted in dramatic contrast changes between images taken with opposite bias voltages. The electronic properties of this system were stable under long-term storage. 42 refs., 7 figs.

  5. Nt_STM: A step forward in Scanning Tunneling Microscopy (STM) simulations

    Science.gov (United States)

    Magoga, Michaël; Archambault, Fabien; Cerdá, Jorge I.

    2012-06-01

    We present the Nt_STM software suite designed to help analysis and interpretation of Scanning Tunneling Microscope (STM) images, via the simulation of STM data under different tip and bias conditions and facilitating their comparison against the experimental ones. The Nt_STM package includes two components: (i) an intuitive and directive Graphical User Interface (GUI) designed to build a precise model of the STM set-up and analyze the simulation results and, (ii) a powerful simulation engine (GREEN) allowing an efficient, yet accurate, calculation of the tunneling current necessary to generate current or topographic images, I(V) spectra as well as various properties such as band structures, Local Density Of State (LDOS), etc. The Nt_STM package, at its current version 2.0, gives the opportunity to access parallel computation, a new collection of objects and new Extended Hückel parameters.

  6. A variable-temperature scanning tunneling microscope capable of single-molecule vibrational spectroscopy

    International Nuclear Information System (INIS)

    Stipe, B.C.; Rezaei, M.A.; Ho, W.

    1999-01-01

    The design and performance of a variable-temperature scanning tunneling microscope (STM) is presented. The microscope operates from 8 to 350 K in ultrahigh vacuum. The thermally compensated STM is suspended by springs from the cold tip of a continuous flow cryostat and is completely surrounded by two radiation shields. The design allows for in situ dosing and irradiation of the sample as well as for the exchange of samples and STM tips. With the STM feedback loop off, the drift of the tip-sample spacing is approximately 0.001 Angstrom/min at 8 K. It is demonstrated that the STM is well-suited for the study of atomic-scale chemistry over a wide temperature range, for atomic-scale manipulation, and for single-molecule inelastic electron tunneling spectroscopy (IETS). copyright 1999 American Institute of Physics

  7. MgB2 energy gap determination by scanning tunnelling spectroscopy

    International Nuclear Information System (INIS)

    Heitmann, T W; Bu, S D; Kim, D M; Choi, J H; Giencke, J; Eom, C B; Regan, K A; Rogado, N; Hayward, M A; He, T; Slusky, J S; Khalifah, P; Haas, M; Cava, R J; Larbalestier, D C; Rzchowski, M S

    2004-01-01

    We report scanning tunnelling spectroscopy (STS) measurements of the gap properties of both ceramic MgB 2 and c-axis oriented epitaxial MgB 2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunnelling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-insulator-superconductor (N-I-S) junctions. We find a gap δ = 2.2-2.8 meV, with spectral features and temperature dependence that are consistent between S-I-S junction types. In addition, we observe evidence of a second, larger gap, δ 7.2 meV, consistent with a proposed two-band model

  8. Spin polarization tuning in the graphene quantum dot by using in-plane external electric field

    International Nuclear Information System (INIS)

    Modarresi, M.; Roknabadi, M.R.; Shahtahmasebi, N.

    2014-01-01

    Electronic, magnetic and transport properties of a nano-graphene dot have been studied by using the DFT and tight binding methods. In the tight binding calculations, the interaction between electrons is modeled using the Hubbard Hamiltonian. By comparison between the eigen-values and density of states in the tight binding and DFT models, we tabulate a set of tight-binding parameters to describe graphene quantum dots for future works. The effects of a single vacancy and an in-plane external electric field on the spin-dependent transport of graphene quantum dot have been investigated. Transport through GQD between two GNR is studied by using Green's function formalism. Our results confirm an intrinsic spin-dependent current and relatively large spin polarization through the GQD in the presence of a single vacancy and zigzag edge. It is also shown that an in-plane external electric field controls the spin-polarization in graphene quantum dot. - Graphical abstract: We study the spin polarization in the presence of an external electric field. Highlights: • A tight binding study of transport through GNR/GQD/GNR is presented. • Our results show a relatively large spin polarization in the current–voltage curve. • Spin polarization is controlled by using an in-plane external electric field

  9. Injection and detection of a spin-polarized current in a light-emitting diode

    Science.gov (United States)

    Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

    1999-12-01

    The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

  10. Electric field induced spin polarization oscillation in nonmagnetic benzene/Cu(100) interface: First principles calculations

    Science.gov (United States)

    Yuan, X. B.; Cai, L. L.; Tian, Y. L.; Hu, G. C.; Ren, J. F.

    2018-01-01

    First-principles calculation are presented to study the influences of external electric fields on the spin polarization properties of benzene/Cu(100) system which do not contain any magnetic atom. Our simulations show that an obvious spontaneous spin polarization oscillation occurred in the benzene molecule when the electric fields are applied. The density of states (DOS), spin density distributions, charge transfer properties are also obtained. It is found that the p-d orbital coupling between the benzene molecule and the electrode leads to spin non-degeneration of the DOS near the fermi energy, so the transferred charges from the Cu atoms to the molecule will fill these spin non-degenerate coupled orbitals, and then the benzene molecule becomes spin polarized. The strength of the p-d orbital coupling as well as the transferred charges oscillated with the external electric fields, which induce spin polarization oscillation. The results are favorable for the understanding of spin polarization properties in organic/nonmagnetic metal structures.

  11. Scanning tunneling microscopy and spectroscopy on GaN and InGaN surfaces

    International Nuclear Information System (INIS)

    Krueger, David

    2009-01-01

    Optelectronic devices based on gallium nitride (GaN) and indium gallium nitride (InGaN) are in the focus of research since more than 20 years and still have great potential for optical applications. In the first part of this work non-polar surfaces of GaN are investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and scanning tunneling microscopy (STM). In SEM and AFM, the (1 anti 100)- and especially the (anti 2110)-plane are quite corrugated. For the first time, the (anti 2110)-plane of GaN is atomically resolved in STM. In the second part InGaN quantum dot layers are investigated by X-ray photoelectron spectroscopy (XPS), scanning tunneling spectroscopy (STS) and STM. The STMmeasurements show the dependency of surface morphology on growth conditions in the metalorganic vapour phase epitaxy (MOVPE). Nucleation, a new MOVPE-strategy, is based on phase separations on surfaces. It is shown that locally varying density of states and bandgaps can be detected by STS, that means bandgap histograms and 2D-bandgap-mapping. (orig.)

  12. Scanning tunneling microscopy of monoatomic gold chains on vicinal Si(335) surface: experimental and theoretical study

    Energy Technology Data Exchange (ETDEWEB)

    Krawiec, M.; Kwapinski, T.; Jalochowski, M. [Institute of Physics and Nanotechnology Center, M. Curie-Sklodowska University, pl. M. Curie-Sklodowskiej 1, 20-031 Lublin (Poland)

    2005-02-01

    We study electronic and topographic properties of the Si(335) surface, containing Au wires parallel to the steps. We use scanning tunneling microscopy (STM) supplemented by reflection of high energy electron diffraction (RHEED) technique. The STM data show the space and voltage dependent oscillations of the distance between STM tip and the surface which can be explained within one band tight binding Hubbard model. We calculate the STM current using nonequilibrium Keldysh Green function formalism. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Investigations of the superconducting proximity effect in normal conducting and ferromagnetic materials using scanning tunneling spectroscopy

    International Nuclear Information System (INIS)

    Wolz, Michael

    2011-01-01

    The superconducting proximity effect (SPE) describes the mutual influence of a normal conductor and a superconductor in electrical contact. Due to the Anderson reflection at the interface the single electron based current in the normal conductor can be transformed into a dissipation free current due to Cooper pairs. Theoretical expectations on the local quasi particle density of states on layered systems with aluminum (BCS superconductor), gold and silver were compared with scanning tunneling microscopy measurements. Palladium was also studied using the proximity effect with respect to a strong electron-phonon coupling with simultaneous ferromagnetism. Another topic was the study of superconductor/ferromagnetic layer structures.

  14. Fiber optic light collection system for scanning-tunneling-microscope-induced light emission.

    Science.gov (United States)

    Watkins, Neil J; Long, James P; Kafafi, Zakya H; Mäkinen, Antti J

    2007-05-01

    We report a compact light collection scheme suitable for retrofitting a scanning tunneling microscope (STM) for STM-induced light emission experiments. The approach uses a pair of optical fibers with large core diameters and high numerical apertures to maximize light collection efficiency and to moderate the mechanical precision required for alignment. Bench tests indicate that efficiency reduction is almost entirely due to reflective losses at the fiber ends, while losses due to fiber misalignment have virtually been eliminated. Photon-map imaging with nanometer features is demonstrated on a stepped Au(111) surface with signal rates exceeding 10(4) counts/s.

  15. Development of a scanning tunneling microscope combined with a synchrotron radiation light source

    International Nuclear Information System (INIS)

    Hasegawa, Yukio; Okuda, Taichi; Eguchi, Toyoaki; Matsushima, Takeshi; Harasawa, Ayumi; Akiyama, Kotone; Kinoshita, Toyohiko

    2005-01-01

    We have developed a scanning tunneling microscope (STM) combined with a synchrotron-radiation light source (SR-STM) aiming at elemental analysis in a spatial resolution of STM. Using SR-STM atomically resolved STM images under the irradiation and also X-ray adsorption spectra clearly showing an adsorption edge of a substrate were successfully obtained by detecting photo-emitted electrons with the STM tip. In order to focus the probing area of the photo-induced current, a glass-coated metal tip sharpened with focused ion beam was used as a probe. The present situation and prospects of the instrument are discussed in this review. (author)

  16. Scanning tunneling spectroscopy of MoS2 monolayer in presence of ethanol gas

    Science.gov (United States)

    Hosseini, Seyed Ali; Iraji zad, Azam; Berahman, Masoud; Aghakhani Mahyari, Farzaneh; Shokouh, Seyed Hossein Hosseini

    2018-04-01

    Due to high surface to volume ratio and tunable band gap, two dimensional (2D) layered materials such as MoS2, is good candidate for gas sensing applications. This research mainly focuses on variation of Density of States (DOS) of MoS2 monolayes caused by ethanol adsorption. The nanosheets are synthesized by liquid exfoliation, and then using Scanning Tunneling Spectroscopy (STS) and Density Functional Theory (DFT), local electronic characteristic such as DOS and band gap in non-vacuum condition are analyzed. The results show that ethanol adsorption enhances DOS and deform orbitals near the valence and conduction bands that increase transport of carriers on the sheet.

  17. First-principles modelling of scanning tunneling microscopy using non-equilibrium Green's functions

    DEFF Research Database (Denmark)

    Lin, H.P.; Rauba, J.M.C.; Thygesen, Kristian Sommer

    2010-01-01

    The investigation of electron transport processes in nano-scale architectures plays a crucial role in the development of surface chemistry and nano-technology. Experimentally, an important driving force within this research area has been the concurrent refinements of scanning tunneling microscopy...... into account. As an illustrating example we apply the NEGF-STM method to the Si(001)(2x1):H surface with sub-surface P doping and discuss the results in comparison to the Bardeen and Tersoff-Hamann methods....

  18. A functional renormalization group application to the scanning tunneling microscopy experiment

    Directory of Open Access Journals (Sweden)

    José Juan Ramos Cárdenas

    2015-12-01

    Full Text Available We present a study of a system composed of a scanning tunneling microscope (STM tip coupled to an absorbed impurity on a host surface using the functional renormalization group (FRG. We include the effect of the STM tip as a correction to the self-energy in addition to the usual contribution of the host surface in the wide band limit. We calculate the differential conductance curves at two different lateral distances from the quantum impurity and find good qualitative agreement with STM experiments where the differential conductance curves evolve from an antiresonance to a Lorentzian shape.

  19. Real-Space Analysis of Scanning Tunneling Microscopy Topography Datasets Using Sparse Modeling Approach

    Science.gov (United States)

    Miyama, Masamichi J.; Hukushima, Koji

    2018-04-01

    A sparse modeling approach is proposed for analyzing scanning tunneling microscopy topography data, which contain numerous peaks originating from the electron density of surface atoms and/or impurities. The method, based on the relevance vector machine with L1 regularization and k-means clustering, enables separation of the peaks and peak center positioning with accuracy beyond the resolution of the measurement grid. The validity and efficiency of the proposed method are demonstrated using synthetic data in comparison with the conventional least-squares method. An application of the proposed method to experimental data of a metallic oxide thin-film clearly indicates the existence of defects and corresponding local lattice distortions.

  20. Dysprosium disilicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy

    International Nuclear Information System (INIS)

    Ye Gangfeng; Nogami, Jun; Crimp, Martin A.

    2006-01-01

    The microstructure of self-assembled dysprosium silicide nanostructures on silicon(001) has been studied by scanning tunneling microscopy and transmission electron microscopy. The studies focused on nanostructures that involve multiple atomic layers of the silicide. Cross-sectional high resolution transmission electron microscopy images and fast Fourier transform analysis showed that both hexagonal and orthorhombic/tetragonal silicide phases were present. Both the magnitude and the anisotropy of lattice mismatch between the silicide and the substrate play roles in the morphology and epitaxial growth of the nanostructures formed

  1. Visible Light Emission from Atomic Scale Patterns Fabricated by the Scanning Tunneling Microscope

    DEFF Research Database (Denmark)

    Thirstrup, C.; Sakurai, M.; Stokbro, Kurt

    1999-01-01

    Scanning tunneling microscope (STM) induced light emission from artificial atomic scale structures comprising silicon dangling bonds on hydrogen-terminated Si(001) surfaces has been mapped spatially and analyzed spectroscopically in the visible spectral range. The light emission is based on a novel...... mechanism involving optical transitions between a tip state and localized states on the sample surface. The wavelength of the photons can be changed by the bias voltage of the STM. The spatial resolution of the photon maps is as good as that of STM topographic images and the photons are emitted from...

  2. Nuclear spin polarized H and D by means of spin-exchange optical pumping

    Science.gov (United States)

    Stenger, Jörn; Grosshauser, Carsten; Kilian, Wolfgang; Nagengast, Wolfgang; Ranzenberger, Bernd; Rith, Klaus; Schmidt, Frank

    1998-01-01

    Optically pumped spin-exchange sources for polarized hydrogen and deuterium atoms have been demonstrated to yield high atomic flow and high electron spin polarization. For maximum nuclear polarization the source has to be operated in spin temperature equilibrium, which has already been demonstrated for hydrogen. In spin temperature equilibrium the nuclear spin polarization PI equals the electron spin polarization PS for hydrogen and is even larger than PS for deuterium. We discuss the general properties of spin temperature equilibrium for a sample of deuterium atoms. One result are the equations PI=4PS/(3+PS2) and Pzz=PSṡPI, where Pzz is the nuclear tensor polarization. Furthermore we demonstrate that the deuterium atoms from our source are in spin temperature equilibrium within the experimental accuracy.

  3. Defect-enhanced Rashba spin-polarized currents in carbon nanotubes

    Science.gov (United States)

    Santos, Hernán; Chico, Leonor; Alvarellos, J. E.; Latgé, A.

    2017-10-01

    The production of spin-polarized currents in pristine carbon nanotubes with Rashba spin-orbit interactions has been shown to be very sensitive to the symmetry of the tubes and the geometry of the setup. Here we analyze the role of defects on the spin quantum conductances of metallic carbon nanotubes due to an external electric field. We show that localized defects, such as adsorbed hydrogen atoms or pentagon-heptagon pairs, increase the Rashba spin-polarized current. Moreover, this enhancement takes place for energies closer to the Fermi energy as compared to the response of pristine tubes. Such increments can be even larger when several equally spaced defects are introduced into the system. We explore different arrangements of defects, showing that for certain geometries there are flips of the spin-polarized current and even transport suppression. Our results indicate that spin valve devices at the nanoscale may be achieved via defect engineering in carbon nanotubes.

  4. Spin polarization versus color–flavor locking in high-density quark matter

    DEFF Research Database (Denmark)

    Tsue, Yasuhiko; da Providência, João; Providência, Constança

    2015-01-01

    It is shown that spin polarization with respect to each flavor in three-flavor quark matter occurs instead of color–flavor locking at high baryon density by using the Nambu–Jona-Lasinio model with four-point tensor-type interaction. Also, it is indicated that the order of phase transition between...... the color–flavor-locked phase and the spin-polarized phase is the first order by means of second-order perturbation theory.......It is shown that spin polarization with respect to each flavor in three-flavor quark matter occurs instead of color–flavor locking at high baryon density by using the Nambu–Jona-Lasinio model with four-point tensor-type interaction. Also, it is indicated that the order of phase transition between...

  5. Strong Linear Dichroism in Spin-Polarized Photoemission from Spin-Orbit-Coupled Surface States.

    Science.gov (United States)

    Bentmann, H; Maaß, H; Krasovskii, E E; Peixoto, T R F; Seibel, C; Leandersson, M; Balasubramanian, T; Reinert, F

    2017-09-08

    A comprehensive understanding of spin-polarized photoemission is crucial for accessing the electronic structure of spin-orbit coupled materials. Yet, the impact of the final state in the photoemission process on the photoelectron spin has been difficult to assess in these systems. We present experiments for the spin-orbit split states in a Bi-Ag surface alloy showing that the alteration of the final state with energy may cause a complete reversal of the photoelectron spin polarization. We explain the effect on the basis of ab initio one-step photoemission theory and describe how it originates from linear dichroism in the angular distribution of photoelectrons. Our analysis shows that the modulated photoelectron spin polarization reflects the intrinsic spin density of the surface state being sampled differently depending on the final state, and it indicates linear dichroism as a natural probe of spin-orbit coupling at surfaces.

  6. Scanning tunneling microscopy and spectroscopy studies of superconducting boron-doped diamond films

    Directory of Open Access Journals (Sweden)

    Terukazu Nishizaki, Yoshihiko Takano, Masanori Nagao, Tomohiro Takenouchi, Hiroshi Kawarada and Norio Kobayashi

    2006-01-01

    Full Text Available We report on scanning tunneling microscopy/spectroscopy (STM/STS experiments on (1 1 1-oriented epitaxial films of heavily boron-doped diamond grown by using the microwave plasma-assisted chemical vapor deposition method. STM/STS measurements were performed by 3He-refrigerator based STM under ultra-high vacuum. The STM topography on the film surface shows a corrugation (with a typical size of ~1 μm and grain-like microstructures (~5–20 nm. The tunneling conductance spectra do not show large spatial dependence and superconductivity is observed independent of the surface structures. The tunneling spectra are analyzed by the Dynes function and the superconducting energy gap is estimated to be Δ=0.87 meV at T=0.47 K, corresponding to 2Δ/kBTc=3.7. The relatively large value of the broadening parameter Γ=0.38 meV is discussed in terms of the inelastic electron scattering processes.

  7. Calibration of tip and sample temperature of a scanning tunneling microscope using a superconductive sample

    International Nuclear Information System (INIS)

    Stocker, Matthias; Pfeifer, Holger; Koslowski, Berndt

    2014-01-01

    The temperature of the electrodes is a crucial parameter in virtually all tunneling experiments. The temperature not only controls the thermodynamic state of the electrodes but also causes thermal broadening, which limits the energy resolution. Unfortunately, the construction of many scanning tunneling microscopes inherits a weak thermal link between tip and sample in order to make one side movable. Such, the temperature of that electrode is badly defined. Here, the authors present a procedure to calibrate the tip temperature by very simple means. The authors use a superconducting sample (Nb) and a standard tip made from W. Due to the asymmetry in the density of states of the superconductor (SC)—normal metal (NM) tunneling junction, the SC temperature controls predominantly the density of states while the NM controls the thermal smearing. By numerically simulating the I-V curves and numerically optimizing the tip temperature and the SC gap width, the tip temperature can be accurately deduced if the sample temperature is known or measureable. In our case, the temperature dependence of the SC gap may serve as a temperature sensor, leading to an accurate NM temperature even if the SC temperature is unknown

  8. Peculiarities of spin polarization inversion at a thiophene/cobalt interface

    KAUST Repository

    Wang, Xuhui

    2013-03-20

    We perform ab initio calculations to investigate the spin polarization at the interface between a thiophene molecule and cobalt substrate. We find that the reduced symmetry in the presence of a sulfur atom (in the thiophene molecule) leads to a strong spatial dependence of the spin polarization of the molecule. The two carbon atoms far from the sulfur acquire a polarization opposite to that of the substrate, while the carbon atoms bonded directly to sulfur possess the same polarization as the substrate. We determine the origin of this peculiar spin interface property as well as its impact on the spin transport.

  9. Hardness and softness reactivity kernels within the spin-polarized density-functional theory

    International Nuclear Information System (INIS)

    Chamorro, Eduardo; De Proft, Frank; Geerlings, Paul

    2005-01-01

    Generalized hardness and softness reactivity kernels are defined within a spin-polarized density-functional theory (SP-DFT) conceptual framework. These quantities constitute the basis for the global, local (i.e., r-position dependent), and nonlocal (i.e., r and r ' -position dependents) indices devoted to the treatment of both charge-transfer and spin-polarization processes in such a reactivity framework. The exact relationships between these descriptors within a SP-DFT framework are derived and the implications for chemical reactivity in such context are outlined

  10. Construction of the spin-polarized slow positron beam with the RI source

    Energy Technology Data Exchange (ETDEWEB)

    Nakajyo, Terunobu; Tashiro, Mutsumi; Kanazawa, Ikuzo [Tokyo Gakugei Univ., Koganei (Japan); Komori, Fumio; Murata, Yoshimasa; Ito, Yasuo

    1997-03-01

    The electrostatic slow-positron beam is constructed by using {sup 22}Na source. We design the electrostatic lens, the system of the detector, and the Wien filter for the experiment`s system of the spin-polarized slow positron beam. The reemitted spin-polarized slow-positron spectroscopy is proposed for studying magnetic thin films and magnetic multilayers. We calculated the depolarized positron fractions in the Fe thin film Fe(10nm)/Cu(substrate) and the multilayers Cu(1nm)/Fe(10nm)/Cu(substrate). (author)

  11. Spontaneous spin-polarization and phase transition in the relativistic approach

    International Nuclear Information System (INIS)

    Maruyama, Tomoyuki; Tatsumi, Toshitaka

    2001-01-01

    We study the spin-polarization mechanism in the highly dense nuclear matter with the relativistic mean-field approach. In the relativistic Hartree-Fock framework we find that there are two kinds of spin-spin interaction channels, which are the axial-vector and tensor exchange ones. If each interaction is strong and different sign, the system loses the spherical symmetry and holds the spin-polarization in the high-density region. When the axial-vector interaction is negative enough, the system holds ferromagnetism. (author)

  12. Interplay between magnetism and conductivity derived from spin-polarized donor radicals.

    Science.gov (United States)

    Sugawara, Tadashi; Komatsu, Hideji; Suzuki, Kentaro

    2011-06-01

    Tutorial review: to achieve molecule-based spintronic devices, an organic conducting magnet that exhibits both conductivity and magnetism in a cooperative manner must be constructed. As a building block for such new materials, a spin-polarized donor radical, which serves as a molecular "spin-filter" in its singly oxidized state, was designed and synthesized. The resistivity of ion radical salts of selenium-substituted, tetrathiafulvalene-based spin-polarized donor radicals decreased substantially in the presence of a magnetic field, thus indicating cooperative conductivity and magnetism.

  13. Note: Electron energy spectroscopy mapping of surface with scanning tunneling microscope.

    Science.gov (United States)

    Li, Meng; Xu, Chunkai; Zhang, Panke; Li, Zhean; Chen, Xiangjun

    2016-08-01

    We report a novel scanning probe electron energy spectrometer (SPEES) which combines a double toroidal analyzer with a scanning tunneling microscope to achieve both topography imaging and electron energy spectroscopy mapping of surface in situ. The spatial resolution of spectroscopy mapping is determined to be better than 0.7 ± 0.2 μm at a tip sample distance of 7 μm. Meanwhile, the size of the field emission electron beam spot on the surface is also measured, and is about 3.6 ± 0.8 μm in diameter. This unambiguously demonstrates that the spatial resolution of SPEES technique can be much better than the size of the incident electron beam.

  14. Imaging by in situ Scanning Tunnelling Microscopy and its Nanotechnological Perspectives

    DEFF Research Database (Denmark)

    Andersen, Jens Enevold Thaulov

    2002-01-01

    of the tip and working electrode. In collaboration with Danish Micro Engineering A/S, the instrument was constructed and tested in laboratory environments. The system was successfully developed, as to meet international-market requirements. Within the frame of the work, procedures of tip coating...... and bipotentiostat construction were evaluated. After the fulfilment of the instrument manufacturing process followed application of the system to scientific investigations. The generation of an image by in situ STM is founded on the principle of electron tunneling but the application of the instrument to aqueous...... in the interpretation of the imaging procedure. Other methods of in situ Scanning Probe Microscopy (in situ SPM), such as in situ Scanning Force Microscopy (in situ AFM) are considered for the sake of comparison and they are applied to imaging of non-conducting systems. Major results include demonstration of atomic...

  15. Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities.

    Science.gov (United States)

    Jung, Han Sae; Tsai, Hsin-Zon; Wong, Dillon; Germany, Chad; Kahn, Salman; Kim, Youngkyou; Aikawa, Andrew S; Desai, Dhruv K; Rodgers, Griffin F; Bradley, Aaron J; Velasco, Jairo; Watanabe, Kenji; Taniguchi, Takashi; Wang, Feng; Zettl, Alex; Crommie, Michael F

    2015-07-24

    Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene's charge carriers in response to potentials from charged Coulomb impurities is predicted to differ significantly from that of most materials. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) can provide detailed information on both the spatial and energy dependence of graphene's electronic structure in the presence of a charged impurity. The design of a hybrid impurity-graphene device, fabricated using controlled deposition of impurities onto a back-gated graphene surface, has enabled several novel methods for controllably tuning graphene's electronic properties. Electrostatic gating enables control of the charge carrier density in graphene and the ability to reversibly tune the charge and/or molecular states of an impurity. This paper outlines the process of fabricating a gate-tunable graphene device decorated with individual Coulomb impurities for combined STM/STS studies. These studies provide valuable insights into the underlying physics, as well as signposts for designing hybrid graphene devices.

  16. Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Magtoto, N. P.; Niu, C.; Ekstrom, B. M.; Addepalli, S.; Kelber, J. A.

    2000-01-01

    Dielectric breakdown of 7-Aa-thick Al 2 O 3 (111) films grown on Ni 3 Al(111) under ultrahigh vacuum conditions is induced by increasing the bias voltage on the scanning tunneling microscopy tip under constant current feedback. Breakdown is marked by the precipitous retreat of the tip from the surface, and the formation of an elevated feature in the scanning tunneling microscopy image, typically greater than 5 nm high and ∼100 nm in diameter. Constant height measurements performed at tip/sample distances of 1 nm or less yield no tip/substrate physical interaction, indicating that such features do not result from mass transport. Consistent with this, current/voltage measurements within the affected regions indicate linear behavior, in contrast to a band gap of 1.5 eV observed at unaffected regions of the oxide surface. A threshold electric field value of 11±1 MV cm -1 is required to induce breakdown, in good agreement with extrapolated values from capacitance measurements on thicker oxides. (c) 2000 American Institute of Physics

  17. A compact combined ultrahigh vacuum scanning tunnelling microscope (UHV STM) and near-field optical microscope

    International Nuclear Information System (INIS)

    Woolley, R A J; Hayton, J A; Cavill, S; Ma, Jin; Beton, P H; Moriarty, P

    2008-01-01

    We have designed and constructed a hybrid scanning near-field optical microscope (SNOM)–scanning tunnelling microscope (STM) instrument which operates under ultrahigh vacuum (UHV) conditions. Indium tin oxide (ITO)-coated fibre-optic tips capable of high quality STM imaging and tunnelling spectroscopy are fabricated using a simple and reliable method which foregoes the electroless plating strategy previously employed by other groups. The fabrication process is reproducible, producing robust tips which may be exchanged under UHV conditions. We show that controlled contact with metal surfaces considerably enhances the STM imaging capabilities of fibre-optic tips. Light collection (from the cleaved back face of the ITO-coated fibre-optic tip) and optical alignment are facilitated by a simple two-lens arrangement where the in-vacuum collimation/collection lens may be adjusted using a slip-stick motor. A second in-air lens focuses the light (which emerges from the UHV system as a parallel beam) onto a cooled CCD spectrograph or photomultiplier tube. The application of the instrument to combined optical and electronic spectroscopy of Au and GaAs surfaces is discussed

  18. Manipulating individual dichlorotin phthalocyanine molecules on Cu(100) surface at room temperature by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Li, Chao; Xiang, Feifei; Wang, Zhongping; Liu, Xiaoqing; Jiang, Danfeng; Wang, Li; Wang, Guang; Zhang, Xueao; Chen, Wei

    2014-01-01

    Single molecule manipulations have been achieved on dichlorotin phthalocyanine(SnCl 2 Pc) molecules adsorbed on Cu (100) at room temperature. Scanning tunneling microscopy observations directly demonstrate that the individual SnCl 2 Pc molecules can be moved along the [100] direction on Cu(100) surface by employing a scanning tunneling microscope tip fixed at the special position of the molecules. The orientation of the molecule can be switched between two angles of ±28° with respect to the [011] surface direction in the same way. Dependences of the probability of molecular motion on the distances between the tip and the molecules reveal that the mechanism for such manipulation of a SnCl 2 Pc molecule is dominated by the repulsive interactions between the tip and the molecules. With the assistance of this manipulation process, a prototype molecular storage array with molecular orientation as information carrier and an artificial hydrogen bonded supramolecular structure have been constructed on the surface. (paper)

  19. Shot noise as a probe of spin-polarized transport through single atoms

    DEFF Research Database (Denmark)

    Burtzlaff, Andreas; Weismann, Alexander; Brandbyge, Mads

    2015-01-01

    Single atoms on Au(111) surfaces have been contacted with the Au tip of a low temperature scanning tunneling microscope. The shot noise of the current through these contacts has been measured up to frequencies of 120 kHz and Fano factors have been determined to characterize the transport channels...

  20. Towards 100% spin-polarized charge-injection : The half-metallic NiMnSb/CdS interface

    NARCIS (Netherlands)

    de Wijs, G.A.; de Groot, R A

    2001-01-01

    Spin-electronics requires an electron source with a spin-polarization as high as possible. For this, half-metallic materials seem ideally suited as they exhibit 100% spin polarization. Because of its high Curie temperature and compatibility with existing semiconductor technology, NiMnSb is a most

  1. Spin-polarized quantum transport properties through flexible phosphorene

    Science.gov (United States)

    Chen, Mingyan; Yu, Zhizhou; Xie, Yiqun; Wang, Yin

    2016-10-01

    We report a first-principles study on the tunnel magnetoresistance (TMR) and spin-injection efficiency (SIE) through phosphorene with nickel electrodes under the mechanical tension and bending on the phosphorene region. Both the TMR and SIE are largely improved under these mechanical deformations. For the uniaxial tension (ɛy) varying from 0% to 15% applied along the armchair transport (y-)direction of the phosphorene, the TMR ratio is enhanced with a maximum of 107% at ɛy = 10%, while the SIE increases monotonously from 8% up to 43% with the increasing of the strain. Under the out-of-plane bending, the TMR overall increases from 7% to 50% within the bending ratio of 0%-3.9%, and meanwhile the SIE is largely improved to around 70%, as compared to that (30%) of the flat phosphorene. Such behaviors of the TMR and SIE are mainly affected by the transmission of spin-up electrons in the parallel configuration, which is highly dependent on the applied mechanical tension and bending. Our results indicate that the phosphorene based tunnel junctions have promising applications in flexible electronics.

  2. A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect

    Directory of Open Access Journals (Sweden)

    Ting Xie

    2017-12-01

    Full Text Available A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented. A voltage compensation circuit based on this potentiometry technique is developed and employed to maintain a desired tunneling voltage independent of the bias current flow through the film. The application of this potentiometry technique to the local sensing of the spin Hall effect is outlined and some experimental results are reported.

  3. Tuning Fermi level of Cr{sub 2}CoZ (Z=Al and Si) inverse Heusler alloys via Fe-doping for maximum spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Mukhtiyar [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India); Saini, Hardev S. [Department of Physics, Panjab University, Chandigarh-160014 (India); Thakur, Jyoti [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India); Reshak, Ali H. [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Center of Excellence Geopolymer and Green Technology, School of Material Engineering, University Malaysia Perlis, 01007 Kangar, Perlis (Malaysia); Kashyap, Manish K., E-mail: manishdft@gmail.com [Department of Physics, Kurukshetra University, Kurukshetra-136119, Haryana (India)

    2014-12-15

    We report full potential treatment of electronic and magnetic properties of Cr{sub 2−x}Fe{sub x}CoZ (Z=Al, Si) Heusler alloys where x=0.0, 0.25, 0.5, 0.75 and 1.0, based on density functional theory (DFT). Both parent alloys (Cr{sub 2}CoAl and Cr{sub 2}CoSi) are not half-metallic frromagnets. The gradual replacement of one Cr sublattice with Fe induces the half-metallicity in these systems, resulting maximum spin polarization. The half-metallicity starts to appear in Cr{sub 2−x}Fe{sub x}CoAl and Cr{sub 2−x}Fe{sub x}CoSi with x=0.50 and x=0.25, respectively, and the values of minority-spin gap and half-metallic gap or spin-flip gap increase with further increase of x. These gaps are found to be maximum for x=1.0 for both cases. An excellent agreement between the structural properties of CoFeCrAl with available experimental study is obtained. The Fermi level tuning by Fe-doping makes these alloys highly spin polarized and thus these can be used as promising candidates for spin valves and magnetic tunnelling junction applications. - Highlights: • Tuning of E{sub F} in Cr{sub 2}CoZ (Z=Al, Si) has been demonstrated via Fe doping. • Effect of Fe doping on half-metallicity and magnetism have been discussed. • The new alloys have a potential of being used as spin polarized electrodes.

  4. Terthiophene on Au(111: A scanning tunneling microscopy and spectroscopy study

    Directory of Open Access Journals (Sweden)

    Berndt Koslowski

    2011-09-01

    Full Text Available Terthiophene (3T molecules adsorbed on herringbone (HB reconstructed Au(111 surfaces in the low coverage regime were investigated by means of low-temperature scanning tunneling microscopy (STM and spectroscopy (STS under ultra-high vacuum conditions. The 3T molecules adsorb preferentially in fcc regions of the HB reconstruction with their longer axis oriented perpendicular to the soliton walls of the HB and at maximum mutual separation. The latter observation points to a repulsive interaction between molecules probably due to parallel electrical dipoles formed during adsorption. Constant-separation (I-V and constant-current (z-V STS clearly reveal the highest occupied (HOMO and lowest unoccupied (LUMO molecular orbitals, which are found at −1.2 eV and +2.3 eV, respectively. The HOMO–LUMO gap corresponds to that of a free molecule, indicating a rather weak interaction between 3T and Au(111. According to conductivity maps, the HOMO and LUMO are inhomogeneously distributed over the adsorbed 3T, with the HOMO being located at the ends of the linear molecule, and the LUMO symmetrically with respect to the longer axis of the molecule at the center of its flanks. Analysis of spectroscopic data reveals details of the contrast mechanism of 3T/Au(111 in STM. For that, the Shockley-like surface state of Au(111 plays an essential role and appears shifted outwards from the surface in the presence of the molecule. As a consequence, the molecule can be imaged even at a tunneling bias within its HOMO–LUMO gap. A more quantitative analysis of this detail resolves a previous discrepancy between the fairly small apparent STM height of 3T molecules (1.4–2.0 nm, depending on tunneling bias and a corresponding larger value of 3.5 nm based on X-ray standing wave analysis. An additionally observed linear decrease of the differential tunneling barrier at positive bias when determined on top of a 3T molecule is compared to the bias independent barrier obtained on

  5. Spin polarized auger electron spectroscopy (SPAES): An element specific local magnetization probe of magnetic materials

    Science.gov (United States)

    Anilturk, Onder S.

    Spin Polarized Auger Electron Spectroscopy (SPAES) is found to have application for investigating fundamental properties as well as element specific local magnetization information on magnetic materials. By using the uniqueness of the UTA-SEMPA tool, one can obtain the surface magnetic domain microstructure and also perform SPAES studies by probing a single domain at the surface. In the current study, knowing the probed domain, spin polarization of electrons from super Coster-Kronig MVV Auger emissions on 3%Si-Fe sheets have been investigated. It is observed that on both sides of 180° domains, separated by a domain wall with an out-of-plane component of magnetization, the spin polarized Auger spectra exhibit similar distributions with high polarization structures, which are consistent with the published data. The element specificity of the system is applied to Gd-Co composite system. Details of 4d core hole initiated Auger transitions showed that the 5d states have enhanced spin polarization, confirming the coupling of moments in the composite system via 5d states of Gd. It is also unambiguously observed that Co magnetic moments are indeed aligned antiparallel to the Gd ones via 4f-5d positive exchange and 3d-5d hybridization.

  6. Spin polarization in top pair production in association with two photons at NLO+PS

    CERN Document Server

    Luisoni, Gionata

    2017-01-01

    This talk focuses on the impact of top-quark spin polarization effects in Higgs boson production in association with a top-quark pair, where the Higgs boson decays to two photons. Predictions for the signal are compared with direct top-quark pair production in association with two photons at NLO+PS.

  7. Spin-polarized versus chiral condensate in quark matter at finite temperature and density

    DEFF Research Database (Denmark)

    Matsuoka, Hiroaki; Tsue, Yasuhiko; da Providencia, Joao

    2016-01-01

    It is shown that the spin-polarized condensate appears in quark matter at high baryon density and low temperature due to the tensor-type four-point interaction in the Nambu-Jona-Lasiniotype model as a low-energy effective theory of quantum chromodynamics. It is indicated within this low...

  8. Spin-polarized transport in a δ-doped magnetic-barrier nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shuai; Lu, Mao-Wang, E-mail: maowanglu@126.com; Jiang, Ya-Qing; Chen, Sai-Yan

    2014-09-05

    We theoretically investigate the electron spin transport properties through a δ-doped magnetic-barrier nanostructure, which can be realized experimentally by depositing two identical ferromagnetic stripes with the opposite in-plane magnetization on the top of a semiconductor heterostructure in parallel configuration and by using atomic layer doping technique. The δ-doping dependent transmission, conductance and spin polarization are calculated exactly by analytically solving Schrödinger equation of the spin electron. It is found that the electronic spin-polarized behavior in this device can be manipulated by changing the weight and/or the position of the δ-doping. Therefore, such a device can be used as a controllable spin filter, which may be helpful for spintronics applications. - Highlights: • Spin-polarized transport in a δ-doped magnetic-barrier nanostructure is explored. • Both magnitude and sign of spin polarization depend on the δ-doping. • A controllable spin filter can be achieved for spintronics applications.

  9. Spin-polarized transport in a two-dimensional electron gas with interdigital-ferromagnetic contacts

    DEFF Research Database (Denmark)

    Hu, C.-M.; Nitta, Junsaku; Jensen, Ane

    2001-01-01

    Ferromagnetic contacts on a high-mobility, two-dimensional electron gas (2DEG) in a narrow gap semiconductor with strong spin-orbit interaction are used to investigate spin-polarized electron transport. We demonstrate the use of magnetized contacts to preferentially inject and detect specific spi...

  10. Resonant Tunneling Spin Pump

    Science.gov (United States)

    Ting, David Z.

    2007-01-01

    The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

  11. A scanning tunneling microscope capable of imaging specified micron-scale small samples

    Science.gov (United States)

    Tao, Wei; Cao, Yufei; Wang, Huafeng; Wang, Kaiyou; Lu, Qingyou

    2012-12-01

    We present a home-built scanning tunneling microscope (STM) which allows us to precisely position the tip on any specified small sample or sample feature of micron scale. The core structure is a stand-alone soft junction mechanical loop (SJML), in which a small piezoelectric tube scanner is mounted on a sliding piece and a "U"-like soft spring strip has its one end fixed to the sliding piece and its opposite end holding the tip pointing to the sample on the scanner. Here, the tip can be precisely aligned to a specified small sample of micron scale by adjusting the position of the spring-clamped sample on the scanner in the field of view of an optical microscope. The aligned SJML can be transferred to a piezoelectric inertial motor for coarse approach, during which the U-spring is pushed towards the sample, causing the tip to approach the pre-aligned small sample. We have successfully approached a hand cut tip that was made from 0.1 mm thin Pt/Ir wire to an isolated individual 32.5 × 32.5 μm2 graphite flake. Good atomic resolution images and high quality tunneling current spectra for that specified tiny flake are obtained in ambient conditions with high repeatability within one month showing high and long term stability of the new STM structure. In addition, frequency spectra of the tunneling current signals do not show outstanding tip mount related resonant frequency (low frequency), which further confirms the stability of the STM structure.

  12. Development of a Millikelvin dual-tip Josephson scanning tunneling microscope

    Science.gov (United States)

    Roychowdhury, Anita

    In this thesis, I first describe the design and construction of a dual-tip millikelvin STM system. The STM is mounted on a dilution refrigerator and the setup includes vibration isolation, rf-filtered wiring, an ultra high vacuum (UHV) sample preparation chamber and sample transfer mechanism. Next I describe a novel superconducting tip fabrication technique. My technique involves dry-etching sections of 250 mum diameter Nb wire with an SF6 plasma in a reactive ion etcher. I present data taken with these tips on various samples at temperatures ranging from 30 mK to 9 K. My results demonstrate that the tips are superconducting, achieve good spectroscopic energy resolution, are mechanically robust over long time periods, and are atomically sharp. I also show data characterizing the performance of our system. This data is in the form of atomic resolution images, spectroscopy, noise spectra and simultaneous scans taken with both tips of the STM. I used these to examine the tip-sample stability, cross talk between the two tips, and to extract the effective noise temperature (˜185 mK) of the sample by fitting the spectroscopy data to a voltage noise model. Finally, I present spectroscopy data taken with a Nb tip on a Nb(100) sample at 30 mK. The enhanced spectroscopic resolution at this temperature allowed me to resolve peaks in the fluctuation-dominated supercurrent at sub-gap voltages. My analysis indicates that these peaks are due to the incoherent tunneling of Cooper pairs at resonant frequencies of the STM's electromagnetic environment. By measuring the response of the STM junction to microwaves, I identified the charge carriers in this regime as Cooper pairs with charge 2e. The amplitude of the response current scales as the square of the Bessel functions, indicating that the pair tunneling originates from photon assisted tunneling in the incoherent regime, rather than the more conventionally observed Shapiro steps in the coherent regime.

  13. Thermally processed titanium oxides film on Si(0 0 1) surface studied with scanning tunneling microscopy/spectroscopy

    International Nuclear Information System (INIS)

    Aoki, T.; Shudo, K.; Sato, K.; Ohno, S.; Tanaka, M.

    2010-01-01

    Thermal structural changes of TiO x films built on a Si(0 0 1) surface were investigated at the nanometer scale with scanning tunneling microscopy. Electronic properties of individual clusters were classified by means of scanning tunneling spectroscopy. The differential conductance (dI/dV) near the Fermi energy showed that nano-clusters were transformed from semiconducting Ti-silicates into metallic Ti-silicides after heating to 970 K. Peaks of normalized differential conductance (dI/dV/(I/V)) of the clusters shifted after heating to about 1070 K, indicating exclusion of oxygen from the clusters.

  14. The mechanism of light emission from a scanning tunnelling microscope operating in air.

    Science.gov (United States)

    Rogez, B; Cao, S; Dujardin, G; Comtet, G; Moal, E Le; Mayne, A; Boer-Duchemin, E

    2016-11-18

    The scanning tunnelling microscope (STM) may be used as a low-energy, electrical nanosource of surface plasmon polaritons and light. In this article, we demonstrate that the optimum mode of operation of the STM for maximum photon emission is completely different in air than in vacuum. To this end, we investigate the emission of photons, the variation in the relative tip-sample distance and the measured current as a function of time for an STM operating in air. Contrary to the case of an STM operating in vacuum, the measured current between the tip and sample for an STM in air is very unstable (rapidly fluctuating in time) when the applied voltage between the tip and sample is in the ∼1.5-3 V range (i.e., in the energy range of visible photons). The photon emission occurs in short (50 μs) bursts when the STM tip is closest to the sample. The current instabilities are shown to be a key ingredient for producing intense light emission from an STM operating in air (photon emission rate several orders of magnitude higher than for stable current). These results are explained in terms of the interplay between the tunnel current and the electrochemical current in the ubiquitous thin water layer that exists when working in air.

  15. Josephson scanning tunneling microscopy -- a local and direct probe of the superconducting order parameter

    Energy Technology Data Exchange (ETDEWEB)

    Kimura, Hikari; Dynes, Robert; Barber Jr., Richard. P.; Ono, S.; Ando, Y.

    2009-09-01

    Direct measurements of the superconducting superfluid on the surface of vacuum-cleaved Bi2Sr2CaCu2O8+delta (BSCCO) samples are reported. These measurements are accomplished via Josephson tunneling into the sample using a novel scanning tunneling microscope (STM) equipped with a superconducting tip. The spatial resolution of the STM of lateral distances less than the superconducting coherence length allows it to reveal local inhomogeneities in the pair wavefunction of the BSCCO. Instrument performance is demonstrated first with Josephson measurements of Pb films followed by the layered superconductor NbSe2. The relevant measurement parameter, the Josephson ICRN product, is discussed within the context of both BCS superconductors and the high transition temperature superconductors. The local relationship between the ICRN product and the quasiparticle density of states (DOS) gap are presented within the context of phase diagrams for BSCCO. Excessive current densities can be produced with these measurements and have been found to alter the local DOS in the BSCCO. Systematic studies of this effect were performed to determine the practical measurement limits for these experiments. Alternative methods for preparation of the BSCCO surface are also discussed.

  16. Scanning tunneling spectroscopy of the surface states of Dirac fermions in thermoelectrics based on bismuth telluride

    Science.gov (United States)

    Lukyanova, L. N.; Makarenko, I. V.; Usov, O. A.; Dementev, P. A.

    2018-05-01

    The morphology of the interlayer van der Waals surface and differential tunneling conductance in p-Bi2‑xSbxTe3‑ySey solid solutions were studied by scanning tunneling microscopy and spectroscopy in dependence on compositions. The topological characteristics of the Dirac fermion surface states were determined. It was shown that the thermoelectric power factor and the material parameter enhance with the shift of the Dirac point to the top of the valence band with the increasing of atomic substitution in these thermoelectrics. A correlation between topological characteristics, power factor and material parameters was found. A growth contribution of the surface states is determined by an increase of the Fermi velocity for large atomic substitutions of Bi at x > 1.5 and small substitutions in the Te sublattice (y = 0.06). In compositions with smaller substitutions at x = (1–1.3) and y = (0.06–0.09), similar effect of the surface states is determined by raising the surface concentration of charge carriers.

  17. Scanning Tunnelling Spectroscopic Studies of Dirac Fermions in Graphene and Topological Insulators

    Directory of Open Access Journals (Sweden)

    wang K.-L.

    2012-03-01

    Full Text Available We report novel properties derived from scanning tunnelling spectroscopic (STS studies of Dirac fermions in graphene and the surface state (SS of a strong topological insulator (STI, Bi2Se3. For mono-layer graphene grown on Cu by chemical vapour deposition (CVD, strain-induced scalar and gauge potentials are manifested by the charging effects and the tunnelling conductance peaks at quantized energies, respectively. Additionally, spontaneous time-reversal symmetry breaking is evidenced by the alternating anti-localization and localization spectra associated with the zero-mode of two sublattices while global time-reversal symmetry is preserved under the presence of pseudo-magnetic fields. For Bi2Se3 epitaxial films grown on Si(111 by molecular beam epitaxy (MBE, spatially localized unitary impurity resonances with sensitive dependence on the energy difference between the Fermi level and the Dirac point are observed for samples thicker than 6 quintuple layers (QL. These findings are characteristic of the SS of a STI and are direct manifestation of strong topological protection against impurities. For samples thinner than 6-QL, STS studies reveal the openup of an energy gap in the SS due to overlaps of wave functions between the surface and interface layers. Additionally, spin-preserving quasiparticle interference wave-vectors are observed, which are consistent with the Rashba-like spin-orbit splitting.

  18. Temperature dependence of the superconducting proximity effect quantified by scanning tunneling spectroscopy

    Directory of Open Access Journals (Sweden)

    A. Stępniak

    2015-01-01

    Full Text Available Here, we present the first systematic study on the temperature dependence of the extension of the superconducting proximity effect in a 1–2 atomic layer thin metallic film, surrounding a superconducting Pb island. Scanning tunneling microscopy/spectroscopy (STM/STS measurements reveal the spatial variation of the local density of state on the film from 0.38 up to 1.8 K. In this temperature range the superconductivity of the island is almost unaffected and shows a constant gap of a 1.20 ± 0.03 meV. Using a superconducting Nb-tip a constant value of the proximity length of 17 ± 3 nm at 0.38 and 1.8 K is found. In contrast, experiments with a normal conductive W-tip indicate an apparent decrease of the proximity length with increasing temperature. This result is ascribed to the thermal broadening of the occupation of states of the tip, and it does not reflect an intrinsic temperature dependence of the proximity length. Our tunneling spectroscopy experiments shed fresh light on the fundamental issue of the temperature dependence of the proximity effect for atomic monolayers, where the intrinsic temperature dependence of the proximity effect is comparably weak.

  19. Tip-Dependent Scanning Tunneling Microscopy Imaging of Ultrathin FeO Films on Pt(111)

    DEFF Research Database (Denmark)

    Merte, Lindsay Richard; Grabow, Lars C.; Peng, Guowen

    2011-01-01

    High-resolution scanning tunneling microscope (STM) images of moiré-structured FeO films on Pt(111) were obtained in a number of different tip-dependent imaging modes. For the first time, the STM images are distinguished and interpreted unambiguously with the help of distinct oxygen......-vacancy dislocation loops in the FeO moiré structure. The experimental STM results are compared with the results of electronic structure calculations within the DFT+U scheme for a realistic (sqrt(91)xsqrt(91)R5.2 moiré unit cell supported on Pt(111) as well as with the results from previous studies. We find that one...

  20. Magnetic fingerprint of individual Fe4 molecular magnets under compression by a scanning tunnelling microscope

    Science.gov (United States)

    Burgess, Jacob A. J.; Malavolti, Luigi; Lanzilotto, Valeria; Mannini, Matteo; Yan, Shichao; Ninova, Silviya; Totti, Federico; Rolf-Pissarczyk, Steffen; Cornia, Andrea; Sessoli, Roberta; Loth, Sebastian

    2015-09-01

    Single-molecule magnets (SMMs) present a promising avenue to develop spintronic technologies. Addressing individual molecules with electrical leads in SMM-based spintronic devices remains a ubiquitous challenge: interactions with metallic electrodes can drastically modify the SMM's properties by charge transfer or through changes in the molecular structure. Here, we probe electrical transport through individual Fe4 SMMs using a scanning tunnelling microscope at 0.5 K. Correlation of topographic and spectroscopic information permits identification of the spin excitation fingerprint of intact Fe4 molecules. Building from this, we find that the exchange coupling strength within the molecule's magnetic core is significantly enhanced. First-principles calculations support the conclusion that this is the result of confinement of the molecule in the two-contact junction formed by the microscope tip and the sample surface.

  1. Circularly polarized light emission in scanning tunneling microscopy of magnetic systems

    International Nuclear Information System (INIS)

    Apell, S.P.; Penn, D.R.; Johansson, P.

    2000-01-01

    Light is produced when a scanning tunneling microscope is used to probe a metal surface. Recent experiments on cobalt utilizing a tungsten tip found that the light is circularly polarized; the sense of circular polarization depends on the direction of the sample magnetization, and the degree of polarization is of order 10%. This raises the possibility of constructing a magnetic microscope with very good spatial resolution. We present a theory of this effect for iron and cobalt and find a degree of polarization of order 0.1%. This is in disagreement with the experiments on cobalt as well as previous theoretical work which found order of magnitude agreement with the experimental results. However, a recent experiment on iron showed 0.0±2%. We predict that the use of a silver tip would increase the degree of circular polarization for a range of photon energies

  2. Graphene formation on metal surfaces investigated by in-situ scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Dong, G C; Van Baarle, D W; Rost, M J; Frenken, J W M

    2012-01-01

    Hydrocarbon decomposition on transition metals provides a practical way of producing graphene. Here, ethylene deposition on Rh (111) is taken as an example. In-situ scanning tunneling microscopy measurements, under various growth conditions and at temperatures up to 1100 K, were carried out, revealing the processes of graphene formation at the atomic level. The initial nucleation stage nearly completely determines the phase in which further C is deposited, graphene or rhodium carbide, and the orientation of the growing graphene patches. We demonstrate that by separating the stages of nucleation and further growth and controlling other growth parameters, we obtain graphene of higher quality, while avoiding carbide formation and controlling the dissolved C to form graphene. Based on these observations, a universal physical picture emerges for graphene formation on metal surfaces. (paper)

  3. Atomic resolution on the (111 )B surface of mercury cadmium telluride by scanning tunneling microscopy

    Science.gov (United States)

    Zha, Fang-Xing; Hong, Feng; Pan, Bi-Cai; Wang, Yin; Shao, Jun; Shen, Xue-Chu

    2018-01-01

    The real-space atomic surface structure of mercury cadmium telluride was successfully achieved on the (111 )B surface of H g0.78C d0.22Te by ultrahigh-vacuum scanning tunneling microscopy (STM). The work casts light on the reconstructions of the (111 )B surface unraveling a (2 ×2 ) surface reconstruction induced by adatom adsorption of Cd. The other (2 ×2 ) surface reconstruction is clarified to be induced by the single Te vacancy, which is more stable than the reconstruction of multivacancies in contrast to the prevailing view. The simulated STM images are in good agreement with the experiments. We also observed an in situ morphology transition from the (1 ×1 ) structure to those (2 ×2 ) reconstructions, implying the stability of the reconstructions.

  4. Perspectives of cross-sectional scanning tunneling microscopy and spectroscopy for complex oxide physics

    Science.gov (United States)

    Wang, Aaron; Chien, TeYu

    2018-03-01

    Complex oxide heterostructure interfaces have shown novel physical phenomena which do not exist in bulk materials. These heterostructures can be used in the potential applications in the next generation devices and served as the playgrounds for the fundamental physics research. The direct measurements of the interfaces with excellent spatial resolution and physical property information is rather difficult to achieve with the existing tools. Recently developed cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/S) for complex oxide interfaces have proven to be capable of providing local electronic density of states (LDOS) information at the interface with spatial resolution down to nanometer scale. In this perspective, we will briefly introduce the basic idea and some recent achievements in using XSTM/S to study complex oxide interfaces. We will also discuss the future of this technique and the field of the interfacial physics.

  5. Cytochrome C Dynamics at Gold and Glassy Carbon Surfaces Monitored by in Situ Scanning Tunnel Microscopy

    DEFF Research Database (Denmark)

    Andersen, Jens Enevold Thaulov; Møller, Per; Pedersen, Marianne Vind

    1995-01-01

    We have investigated the absorption of cytochrome c on gold and glassy carbon substrates by in situ scanning tunnel microscopy under potentiostatic control of both substrate and tip. Low ionic strength and potential ranges where no Faradaic current flows were used. Cyt c aggregates into flat...... composite structures of about 50 nm lateral extension at gold surfaces. The aggregates evolve in time, and structures resembling individual cyt c molecules can be distinguished in the space between the 50 nm structures. Cyt c aggregates also form at glassy carbon but have a different, unbroken character...... where cyt c both sticks well to the surface and exhibits notable mobility. The observations suggest that characteristic surface specific, internally mobile protein aggregates are formed at both surfaces and that in situ molecular resolution of the STM pictures may have been achieved....

  6. Scanning tunneling microscopy study on the oxidation and annealing of Ga/Si(111)

    Science.gov (United States)

    Okada, Arifumi; Naeshirozako, Takuya; Nishimura, Keiya; Yoshimura, Masamichi; Kadono, Kohei

    2017-04-01

    The oxidation and annealing of Ga/Si(111) surfaces with a coverage below 1 ML have been investigated by scanning tunneling microscopy (STM). Various gallium-induced phases from a partially \\sqrt{3} × \\sqrt{3} -R30°-covered 7×7 structure (less than 1/3 ML) to a fully covered Ga/Si bilayer (close to 1 ML) were successfully prepared on Si(111) surfaces. Oxygen exposure at elevated temperatures induced a structural change in the bilayer phase, in which etching seems to start from the domain boundaries of the tiled bilayer structure. After 200 L oxygen exposure, the bilayer changed to randomly distributed nanocluster-like and nanoparticle-like structures. The evolution of the oxidized surface induced by annealing in ultrahigh vacuum suggests the formation of volatile compounds such as Ga2O and SiO.

  7. Measurement of phosphorus segregation in silicon at the atomic scale using scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Oberbeck, L.; Curson, N.J.; Hallam, T.; Simmons, M.Y.; Bilger, G.; Clark, R.G.

    2004-01-01

    In order to fabricate precise atomic-scale devices in silicon using a combination of scanning tunneling microscopy (STM) to position dopant atoms and molecular beam epitaxy to encapsulate the dopants it is necessary to minimize the segregation/diffusion of dopant atoms during silicon encapsulation. We characterize the surface segregation/diffusion of phosphorus atoms from a δ-doped layer in silicon after encapsulation at 250 deg. C and room temperature using secondary ion mass spectrometry (SIMS) and STM. We show that the surface phosphorus density can be reduced to a few percent of the initial δ-doped density if the phosphorus atoms are encapsulated with 5 monolayers of epitaxial silicon at room temperature. We highlight the limitations of SIMS to determine phosphorus segregation at the atomic scale and the advantage of using STM directly

  8. Atomic-Scale Visualization of Quantum Interference on a Weyl Semimetal Surface by Scanning Tunneling Microscopy.

    Science.gov (United States)

    Zheng, Hao; Xu, Su-Yang; Bian, Guang; Guo, Cheng; Chang, Guoqing; Sanchez, Daniel S; Belopolski, Ilya; Lee, Chi-Cheng; Huang, Shin-Ming; Zhang, Xiao; Sankar, Raman; Alidoust, Nasser; Chang, Tay-Rong; Wu, Fan; Neupert, Titus; Chou, Fangcheng; Jeng, Horng-Tay; Yao, Nan; Bansil, Arun; Jia, Shuang; Lin, Hsin; Hasan, M Zahid

    2016-01-26

    Weyl semimetals may open a new era in condensed matter physics, materials science, and nanotechnology after graphene and topological insulators. We report the first atomic scale view of the surface states of a Weyl semimetal (NbP) using scanning tunneling microscopy/spectroscopy. We observe coherent quantum interference patterns that arise from the scattering of quasiparticles near point defects on the surface. The measurements reveal the surface electronic structure both below and above the chemical potential in both real and reciprocal spaces. Moreover, the interference maps uncover the scattering processes of NbP's exotic surface states. Through comparison between experimental data and theoretical calculations, we further discover that the orbital and/or spin texture of the surface bands may suppress certain scattering channels on NbP. These results provide a comprehensive understanding of electronic properties on Weyl semimetal surfaces.

  9. Hydrogen adsorption on Ru(001) studied by Scanning TunnelingMicroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Tatarkhanov, Mous; Rose, Franck; Fomin, Evgeny; Ogletree, D.Frank; Salmeron, Miquel

    2008-01-18

    The adsorption of hydrogen on Ru(001) was studied by scanning tunneling microscopy at temperatures around 50 K. Hydrogen was found to adsorb dissociatively forming different ordered structures as a function of coverage. In order of increasing coverage {theta} in monolayers (ML) these were ({radical}3 x {radical}3)r30{sup o} at {theta} = 0.3 ML; (2 x 1) at {theta} = 0.50 ML, (2 x 2)-3H at {theta} = 0.75, and (1 x 1) at {theta} = 1.00. Some of these structures were observed to coexist at intermediate coverage values. Close to saturation of 1 ML, H-vacancies (unoccupied three fold fcc hollow Ru sites) were observed either as single entities or forming transient aggregations. These vacancies diffuse and aggregate to form active sites for the dissociative adsorption of hydrogen.

  10. Scanning tunneling microscopy studies of organic monolayers adsorbed on the rhodium(111) crystal surface

    Energy Technology Data Exchange (ETDEWEB)

    Cernota, Paul Davis [Univ. of California, Berkeley, CA (United States)

    1999-08-01

    Scanning Tunneling Microscopy studies were carried out on ordered overlayers on the (111) surface of rhodium. These adsorbates include carbon monoxide (CO), cyclohexane, cyclohexene, 1,4-cyclohexadiene, para-xylene, and meta-xylene. Coadsorbate systems included: CO with ethylidyne, CO with para- and meta-xylene, and para-xylene with meta-xylene. In the case of CO, the structure of the low coverage (2x2) overlayer has been observed. The symmetry of the unit cell in this layer suggests that the CO is adsorbed in the 3-fold hollow sites. There were also two higher coverage surface structures with (√7x√7) unit cells. One of these is composed of trimers of CO and has three CO molecules in each unit cell. The other structure has an additional CO molecule, making a total of four. This extra CO sits on a top site.

  11. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy.

    Science.gov (United States)

    Jeong, Jaewoo; Ferrante, Yari; Faleev, Sergey V; Samant, Mahesh G; Felser, Claudia; Parkin, Stuart S P

    2016-01-18

    Although high-tunnelling spin polarization has been observed in soft, ferromagnetic, and predicted for hard, ferrimagnetic Heusler materials, there has been no experimental observation to date of high-tunnelling magnetoresistance in the latter. Here we report the preparation of highly textured, polycrystalline Mn3Ge films on amorphous substrates, with very high magnetic anisotropy fields exceeding 7 T, making them technologically relevant. However, the small and negative tunnelling magnetoresistance that we find is attributed to predominant tunnelling from the lower moment Mn-Ge termination layers that are oppositely magnetized to the higher moment Mn-Mn layers. The net spin polarization of the current reflects the different proportions of the two distinct termination layers and their associated tunnelling matrix elements that result from inevitable atomic scale roughness. We show that by engineering the spin polarization of the two termination layers to be of the same sign, even though these layers are oppositely magnetized, high-tunnelling magnetoresistance is possible.

  12. Theory of electrically controlled resonant tunneling spin devices

    Science.gov (United States)

    Ting, David Z. -Y.; Cartoixa, Xavier

    2004-01-01

    We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.

  13. Systematic analyses of vibration noise of a vibration isolation system for high-resolution scanning tunneling microscopes.

    Science.gov (United States)

    Iwaya, Katsuya; Shimizu, Ryota; Hashizume, Tomihiro; Hitosugi, Taro

    2011-08-01

    We designed and constructed an effective vibration isolation system for stable scanning tunneling microscopy measurements using a separate foundation and two vibration isolation stages (i.e., a combination of passive and active vibration isolation dampers). Systematic analyses of vibration data along the horizontal and vertical directions are present, including the vibration transfer functions of each stage and the overall vibration isolation system. To demonstrate the performance of the system, tunneling current noise measurements are conducted with and without the vibration isolation. Combining passive and active vibration isolation dampers successfully removes most of the vibration noise in the tunneling current up to 100 Hz. These comprehensive vibration noise data, along with details of the entire system, can be used to establish a clear guideline for building an effective vibration isolation system for various scanning probe microscopes and electron microscopes.

  14. Effect of orbital hybridization on spin-polarized tunneling across Co/C60 interfaces

    NARCIS (Netherlands)

    Wang, Kai; Strambini, Elia; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter

    2016-01-01

    The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we

  15. Spin-polarized transport in manganite-based magnetic nano structures

    International Nuclear Information System (INIS)

    Granada, Mara

    2007-01-01

    Giant magnetoresistance (G M R) and tunnel magnetoresistance are spin polarized transport phenomena which are observed in magnetic multilayers.They consist in a large variation of the electrical resistivity of the system depending on whether the magnetizations of the magnetic layers are aligned parallel or anti-parallel to each other. In order to be able to align the magnetic layers by means of an external magnetic field, they must not be strongly ferromagnetically coupled.The extrinsic magnetoresistance effects in magnetic multilayers, either G M R in the case of a metallic spacer, or T M R in the case of an insulating spacer, are observed at low magnetic fields, which makes these phenomena interesting for technological applications.We studied the possibility of using the ferromagnetic manganite La 0 ,75Sr 0 ,25MnO 3 (L S M O) in magneto resistive devices, with different materials as a spacer layer.As the main result of this work, we report G M R and T M R measurements in L S M O/LaNiO 3 /L S M O and L S M O/CaMnO 3 /L S M O tri layers, respectively, observed for the first time in these systems.This work included the deposition of films and multilayers by sputtering, the structural characterization of the samples and the study of their magnetic and electric transport properties.Our main interest was the study of G M R in L S M O/LaNiO 3 /L S M O tri layers.It was necessary to firstly characterize the magnetic coupling of L S M O layers through the L N O spacer. After that, we performed electric transport measurements with the current in the plane of the samples.We measured a G M R contribution of ∼ 0,55 % at T = 83 K.We designed a procedure for patterning the samples by e-beam lithography for electric transport measurements with the current perpendicular to the plane. We also performed the study of L S M O/CaMnO 3 /L S M O tri layers with an insulating spacer.We studied the magnetic coupling, as in the previous case.Then we fabricated a tunnel junction for

  16. Low conductive support for thermal insulation of a sample holder of a variable temperature scanning tunneling microscope

    Czech Academy of Sciences Publication Activity Database

    Hanzelka, Pavel; Vonka, J.; Musilová, Věra

    2013-01-01

    Roč. 84, č. 8 (2013), 085103:1-6 ISSN 0034-6748 R&D Projects: GA MŠk ED0017/01/01; GA TA ČR TE01020233 Institutional support: RVO:68081731 Keywords : Thermal conductiviy * Scanning tunneling microscope Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.584, year: 2013

  17. Two-Dimensional Cysteine and Cystine Cluster Networks on Au(111) Disclosed by Voltammetry and in Situ Scanning Tunneling Microscopy

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Chi, Qijin; Nielsen, Jens Ulrik

    2000-01-01

    Microscopic structures for molecular monolayers of L-cysteine and L-cystine assembled on Au(111) have been disclosed by employing electrochemistry and in situ scanning tunneling microscopy (STM). HighresolutionSTMimages show that the adlayers of both cyteine and cystine exhibit highly-ordered net...

  18. Voltammetry and In Situ Scanning Tunnelling Microscopy of De Novo Designed Heme Protein Monolayers on Au(111)-Electrode Surfaces

    DEFF Research Database (Denmark)

    Albrecht, Tim; Li, Wu; Haehnel, Wolfgang

    2006-01-01

    In the present work, we report the electrochemical characterization and in situ scanning tunnelling microscopy (STM) studies of monolayers of an artificial de novo designed heme protein MOP-C, covalently immobilized on modified Au(111) surfaces. The protein forms closely packed monolayers, which ...

  19. Atomic structure of screw dislocations intersecting the Au(111) surface: A combined scanning tunneling microscopy and molecular dynamics study

    DEFF Research Database (Denmark)

    Engbæk, Jakob; Schiøtz, Jakob; Dahl-Madsen, Bjarke

    2006-01-01

    The atomic-scale structure of naturally occurring screw dislocations intersecting a Au(111) surface has been investigated both experimentally by scanning tunneling microscopy (STM) and theoretically using molecular dynamics (MD) simulations. The step profiles of 166 dislocations were measured using...

  20. Scanning Tunneling Microscopic Observation of Adatom-Mediated Motifs on Gold-Thiol Self-assembled Monolayers at High Coverage

    DEFF Research Database (Denmark)

    Wang, Yun; Chi, Qijin; Hush, Noel S.

    2009-01-01

    Self-assembled monolayers (SAMs) formed by chemisorption of a branched-chain alkanethiol, 2-methyl-1-propanethiol, on Au(111) surfaces were studied by in situ scanning tunneling microscopy (STM) under electrochemical potential control and analyzed using extensive density functional theory (DFT...

  1. Scanning tunneling microscope combined with synchrotron-radiation for elemental analysis

    International Nuclear Information System (INIS)

    Okuda, T.; Eguchi, T.; Matsushima, T.; Hamada, M.; Ma, X.-D.; Kataoka, A.; Harasawa, A.; Kinoshita, T.; Hasegawa, Y.

    2004-01-01

    Full text: We present a newly developed synchrotron-radiation-illuminated scanning-tunneling-microscope (SR-STM) at BL-19A in Photon Factory (KEK, Japan). Combining the energy tunability of SR light with the high-spatial resolution of STM, we aim to develop an element-specific microscope. That is, by detecting the photoelectrons from the specific core-levels excited by SR light with STM tip, we expect an elemental mapping of the surface with high spatial resolution. Figure shows an STM image of the Si(111) 7 x 7 surface by the SR- STM in a constant current mode (V sample = - 1.2 V, I t =240 pA) with and without SR light illuminating with the photon energy ranging from hv = 93 to 105 eV. As shown in the figure, atomically resolved imaging is attained even under the light illumination. The cross-sectional profile of the STM image is shown in the right of the figure. Light shade indicates the SR illumination during scanning over the area. When the surface is illuminated by the SR light, the tip height is obviously raised. Moreover, a sharp increase of the tip height is observed above the Si L adsorption edge ( ∼ 101 eV). These results demonstrate the possibility of elemental identification using this technique. The spatial resolution of the elemental mapping is approximately micron order at present. In order to improve it, we are now testing a tip-coating and some other trial techniques

  2. Preparation of scanning tunneling microscopy tips using pulsed alternating current etching

    International Nuclear Information System (INIS)

    Valencia, Victor A.; Thaker, Avesh A.; Derouin, Jonathan; Valencia, Damian N.; Farber, Rachael G.; Gebel, Dana A.; Killelea, Daniel R.

    2015-01-01

    An electrochemical method using pulsed alternating current etching (PACE) to produce atomically sharp scanning tunneling microscopy (STM) tips is presented. An Arduino Uno microcontroller was used to control the number and duration of the alternating current (AC) pulses, allowing for ready optimization of the procedures for both Pt:Ir and W tips using a single apparatus. W tips prepared using constant and pulsed AC power were compared. Tips fashioned using PACE were sharper than those etched with continuous AC power alone. Pt:Ir tips were prepared with an initial coarse etching stage using continuous AC power followed by fine etching using PACE. The number and potential of the finishing AC pulses was varied and scanning electron microscope imaging was used to compare the results. Finally, tip quality using the optimized procedures was verified by UHV-STM imaging. With PACE, at least 70% of the W tips and 80% of the Pt:Ir tips were of sufficiently high quality to obtain atomically resolved images of HOPG or Ni(111)

  3. Preparation of scanning tunneling microscopy tips using pulsed alternating current etching

    Energy Technology Data Exchange (ETDEWEB)

    Valencia, Victor A.; Thaker, Avesh A.; Derouin, Jonathan; Valencia, Damian N.; Farber, Rachael G.; Gebel, Dana A.; Killelea, Daniel R., E-mail: dkillelea@luc.edu [Department of Chemistry and Biochemistry, Loyola University Chicago, 1068 W. Sheridan Rd., Chicago, Illinois 60660 (United States)

    2015-03-15

    An electrochemical method using pulsed alternating current etching (PACE) to produce atomically sharp scanning tunneling microscopy (STM) tips is presented. An Arduino Uno microcontroller was used to control the number and duration of the alternating current (AC) pulses, allowing for ready optimization of the procedures for both Pt:Ir and W tips using a single apparatus. W tips prepared using constant and pulsed AC power were compared. Tips fashioned using PACE were sharper than those etched with continuous AC power alone. Pt:Ir tips were prepared with an initial coarse etching stage using continuous AC power followed by fine etching using PACE. The number and potential of the finishing AC pulses was varied and scanning electron microscope imaging was used to compare the results. Finally, tip quality using the optimized procedures was verified by UHV-STM imaging. With PACE, at least 70% of the W tips and 80% of the Pt:Ir tips were of sufficiently high quality to obtain atomically resolved images of HOPG or Ni(111)

  4. Scanning tunneling microscopy I general principles and applications to clean and absorbate-covered surfaces

    CERN Document Server

    Wiesendanger, Roland

    1994-01-01

    Since the first edition of "Scanning 'funneling Microscopy I" has been pub­ lished, considerable progress has been made in the application of STM to the various classes of materials treated in this volume, most notably in the field of adsorbates and molecular systems. An update of the most recent develop­ ments will be given in an additional Chapter 9. The editors would like to thank all the contributors who have supplied up­ dating material, and those who have provided us with suggestions for further improvements. We also thank Springer-Verlag for the decision to publish this second edition in paperback, thereby making this book affordable for an even wider circle of readers. Hamburg, July 1994 R. Wiesendanger Preface to the First Edition Since its invention in 1981 by G. Binnig, H. Rohrer and coworkers at the IBM Zurich Research Laboratory, scanning tunneling microscopy (STM) has devel­ oped into an invaluable surface analytical technique allowing the investigation of real-space surface structures at th...

  5. Spin Tunneling in Junctions with Disordered Ferromagnets

    NARCIS (Netherlands)

    Paluskar, P.V.; Attema, J.J.; de Wijs, G.A.; Fiddy, S.; Snoeck, E.; Kohlhepp, J.T.; Swagten, H.J.M.; de Groot, R. A.; Koopmans, H.

    2008-01-01

    We provide compelling evidence to establish that, contrary to one’s elementary guess, the tunneling spin polarization (TSP) of amorphous CoFeB is larger than that of fcc CoFeB. First-principles atomic and electronic structure calculations reveal striking agreement between the measured TSP and the

  6. Pellet fusion gain calculations modified by electrostatic double layers and by spin polarized nuclei

    International Nuclear Information System (INIS)

    Hora, H.; Cicchitelli, L.; Elijah, J.S.; Ghatak, A.K.; Goldsworthy, M.T.; Lalousis, P.; Eliezer, S.

    1984-01-01

    All preceding hydrodynamic computations of plasmas are wrong if the thermal conductivity is essential because electronic thermal conductivity is decreased in plasma inhomogeneities due to electrostatic double layers. In the worst case, ionic conductivity remains. We compare this with a possible electronic conductivity by the fast tail of the energy distribution. Using the volume ignition for fusion gain computations, we study the increase of gain by spin-polarization of nuclei for the DT reaction especially in non-linear ranges. Gain can increase by a factor 3.1. Contents are the following: electrostatic fields and double layers in inhomogeneous plasma, change of thermal conduction by double layers, consequences for pellet fusion, gain calculation with spin polarized nuclei. (Mori, K.)

  7. Spin-polarized spin-orbit-split quantum-well states in a metal film

    Energy Technology Data Exchange (ETDEWEB)

    Varykhalov, Andrei; Sanchez-Barriga, Jaime; Gudat, Wolfgang; Eberhardt, Wolfgang; Rader, Oliver [BESSY Berlin (Germany); Shikin, Alexander M. [St. Petersburg State University (Russian Federation)

    2008-07-01

    Elements with high atomic number Z lead to a large spin-orbit coupling. Such materials can be used to create spin-polarized electronic states without the presence of a ferromagnet or an external magnetic field if the solid exhibits an inversion asymmetry. We create large spin-orbit splittings using a tungsten crystal as substrate and break the structural inversion symmetry through deposition of a gold quantum film. Using spin- and angle-resolved photoelectron spectroscopy, it is demonstrated that quantum-well states forming in the gold film are spin-orbit split and spin polarized up to a thickness of at least 10 atomic layers. This is a considerable progress as compared to the current literature which reports spin-orbit split states at metal surfaces which are either pure or covered by at most a monoatomic layer of adsorbates.

  8. Spin-polarized free electron beam interaction with radiation and superradiant spin-flip radiative emission

    Directory of Open Access Journals (Sweden)

    A. Gover

    2006-06-01

    Full Text Available The problems of spin-polarized free-electron beam interaction with electromagnetic wave at electron-spin resonance conditions in a magnetic field and of superradiant spin-flip radiative emission are analyzed in the framework of a comprehensive classical model. The spontaneous emission of spin-flip radiation from electron beams is very weak. We show that the detectivity of electron spin resonant spin-flip and combined spin-flip/cyclotron-resonance-emission radiation can be substantially enhanced by operating with ultrashort spin-polarized electron beam bunches under conditions of superradiant (coherent emission. The proposed radiative spin-state modulation and the spin-flip radiative emission schemes can be used for control and noninvasive diagnostics of polarized electron/positron beams. Such schemes are of relevance in important scattering experiments off nucleons in nuclear physics and off magnetic targets in condensed matter physics.

  9. Transport Properties of Spin-Polarized Atomic Hydrogen Using Generalized Scattering Theory

    Science.gov (United States)

    Joudeh, B. R.; Sandouqa, A. S.

    2018-02-01

    Our results for the scattering and thermophysical properties of spin-polarized atomic hydrogen (H{\\downarrow }) have been presented in the temperature range 0.01-10 K using the Galitskii-Migdal-Feynman formalism. These results include the quantum second virial coefficient, the average total and viscosity cross sections, the viscosity, the diffusion coefficient, and the thermal conductivity. The calculations have been undertaken using three triplet-state potentials: Morse-type, Silvera and Born-Oppenheimer potentials. The Morse potential is less attractive and very simple, but less accurate to describe spin-polarized atomic hydrogen. That explains the differences between it and the other two potentials, which are clearly better. From the results of the average total cross sections, it is concluded the H{\\downarrow } remains a gas even at low temperature. The viscosity, the thermal conductivity, and the diffusion coefficients of H{\\downarrow } increase in all cases with increasing temperature.

  10. Control of the spin polarization of photoelectrons/photoions using short laser pulses

    International Nuclear Information System (INIS)

    Nakajima, Takashi

    2004-01-01

    We present a generic pump-probe scheme to control spin polarization of photoelectrons/photoions by short laser pulses. By coherently exciting fine structure manifolds of a multi-valence-electron system by the pump laser, a superposition of fine structure states is created. Since each fine structure state can be further decomposed into a superposition of various spin states of valence electrons, each spin component evolves differently in time. This means that varying the time delay between the pump and probe lasers leads to the control of spin states. Specific theoretical results are presented for two-valence-electron atoms, in particular for Mg, which demonstrate that not only the degree of spin polarization but also its sign can be manipulated through time delay. Since the underline physics is rather general and transparent, the presented idea may be potentially applied to nanostructures such as quantum wells and quantum dots

  11. Intense source of spin-polarized electrons using laser-induced optical pumping

    International Nuclear Information System (INIS)

    Gray, L.G.; Giberson, K.W.; Cheng, C.; Keiffer, R.S.; Dunning, F.B.; Walters, G.K.

    1983-01-01

    A source of spin-polarized electrons based on a laser-pumped flowing helium afterglow is described. He(2 3 S) atoms contained in the afterglow are optically pumped using circularly polarized 1.08-μm (2 3 S→2 3 P) radiation provided by a NaF (F 2+ )( color-center laser. Spin angular momentum conservation in subsequent chemi-ionization reactions with CO 2 produces polarized electrons that are extracted from the afterglow. At low currents, < or approx. =1 μA, polarizations of approx.70%--80% are achieved. At higher currents the polarization decreases, falling to approx.40% at 50 μA. The spin polarization can be simply reversed (P→-P) and the source is suitable for use in the majority of low-energy spin-dependent scattering experiments proposed to date

  12. Coupled spin and charge collective excitations in a spin polarized electron gas

    International Nuclear Information System (INIS)

    Marinescu, D.C.; Quinn, J.J.; Yi, K.S.

    1997-01-01

    The charge and longitudinal spin responses induced in a spin polarized quantum well by a weak electromagnetic field are investigated within the framework of the linear response theory. The authors evaluate the excitation frequencies for the intra- and inter-subband transitions of the collective charge and longitudinal spin density oscillations including many-body corrections beyond the random phase approximation through the spin dependent local field factors, G σ ± (q,ω). An equation-of-motion method was used to obtain these corrections in the limit of long wavelengths, and the results are given in terms of the equilibrium pair correlation function. The finite degree of spin polarization is shown to introduce coupling between the charge and spin density modes, in contrast with the result for an unpolarized system

  13. Two-photon spin-polarization spectroscopy in silicon-doped GaAs.

    Science.gov (United States)

    Miah, M Idrish

    2009-05-14

    We generate spin-polarized electrons in bulk GaAs using circularly polarized two-photon pumping with excess photon energy (DeltaE) and detect them by probing the spin-dependent transmission of the sample. The spin polarization of conduction band electrons is measured and is found to be strongly dependent on DeltaE. The initial polarization, pumped with DeltaE=100 meV, at liquid helium temperature is estimated to be approximately 49.5%, which is very close to the theoretical value (50%) permitted by the optical selection rules governing transitions from heavy-hole and light-hole states to conduction band states in a bulk sample. However, the polarization pumped with larger DeltaE decreases rapidly because of the exciting carriers from the split-off band.

  14. Spin-wave propagation and spin-polarized electron transport in single-crystal iron films

    Science.gov (United States)

    Gladii, O.; Halley, D.; Henry, Y.; Bailleul, M.

    2017-11-01

    The techniques of propagating spin-wave spectroscopy and current-induced spin-wave Doppler shift are applied to a 20-nm-thick Fe/MgO(001) film. The magnetic parameters extracted from the position of the spin-wave resonance peaks are very close to those tabulated for bulk iron. From the zero-current propagating wave forms, a group velocity of 4 km/s and an attenuation length of about 6 μ m are extracted for 1.6-μ m -wavelength spin wave at 18 GHz. From the measured current-induced spin-wave Doppler shift, we extract a surprisingly high degree of spin polarization of the current of 83 % , which constitutes the main finding of this work. This set of results makes single-crystalline iron a promising candidate for building devices utilizing high-frequency spin waves and spin-polarized currents.

  15. Illuminating "spin-polarized" Bloch wave-function projection from degenerate bands in decomposable centrosymmetric lattices

    Science.gov (United States)

    Li, Pengke; Appelbaum, Ian

    2018-03-01

    The combination of space inversion and time-reversal symmetries results in doubly degenerate Bloch states with opposite spin. Many lattices with these symmetries can be constructed by combining a noncentrosymmetric potential (lacking this degeneracy) with its inverted copy. Using simple models, we unravel the evolution of local spin splitting during this process of inversion symmetry restoration, in the presence of spin-orbit interaction and sublattice coupling. Importantly, through an analysis of quantum mechanical commutativity, we examine the difficulty of identifying states that are simultaneously spatially segregated and spin polarized. We also explain how surface-sensitive experimental probes (such as angle-resolved photoemission spectroscopy, or ARPES) of "hidden spin polarization" in layered materials are susceptible to unrelated spin splitting intrinsically induced by broken inversion symmetry at the surface.

  16. Neutral Silicon-Vacancy Center in Diamond: Spin Polarization and Lifetimes

    Science.gov (United States)

    Green, B. L.; Mottishaw, S.; Breeze, B. G.; Edmonds, A. M.; D'Haenens-Johansson, U. F. S.; Doherty, M. W.; Williams, S. D.; Twitchen, D. J.; Newton, M. E.

    2017-09-01

    We demonstrate optical spin polarization of the neutrally charged silicon-vacancy defect in diamond (SiV0 ), an S =1 defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but nonzero at below-resonant energies. We measure an ensemble spin coherence time T2>100 μ s at low-temperature, and a spin relaxation limit of T1>25 s . Optical spin-state initialization around 946 nm allows independent initialization of SiV0 and NV- within the same optically addressed volume, and SiV0 emits within the telecoms down-conversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that SiV0 is a promising candidate for a long-range quantum communication technology.

  17. High spin-polarization in ultrathin Co{sub 2}MnSi/CoPd multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Galanakis, I., E-mail: galanakis@upatras.gr

    2015-03-01

    Half-metallic Co{sub 2}MnSi finds a broad spectrum of applications in spintronic devices either in the form of thin films or as spacer in multilayers. Using state-of-the-art ab-initio electronic structure calculations we exploit the electronic and magnetic properties of ultrathin Co{sub 2}MnSi/CoPd multilayers. We show that these heterostructures combine high values of spin-polarization at the Co{sub 2}MnSi spacer with the perpendicular magnetic anisotropy of binary compounds such as CoPd. Thus they could find application in spintronic/magnetoelectronic devices. - Highlights: • Ab-initio study of ultrathin Co{sub 2}MnSi/CoPd multilayers. • Large values of spin-polarization at the Fermi are retained. • Route for novel spintronic/magnetoelectronic devices.

  18. Micromagnetism in (001) magnetite by spin-polarized low-energy electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Figuera, Juan de la, E-mail: juan.delafiguera@iqfr.csic.es [Instituto de Química-Física “Rocasolano”, CSIC, Madrid 28006 (Spain); Vergara, Lucía [Instituto de Química-Física “Rocasolano”, CSIC, Madrid 28006 (Spain); N' Diaye, Alpha T. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Quesada, Adrian [Instituto de Cerámica y Vidrio, CSIC, Calle Kelsen 5, 28049, Madrid (Spain); Schmid, Andreas K. [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2013-07-15

    Spin-polarized low-energy electron microscopy was used to image a magnetite crystal with (001) surface orientation. Sets of spin-dependent images of magnetic domain patterns observed in this surface were used to map the direction of the magnetization vector with high spatial and angular resolution. We find that domains are magnetized along the surface <110> directions, and domain wall structures include 90° and 180° walls. A type of unusually curved domain walls are interpreted as Néel-capped surface terminations of 180° Bloch walls. - Highlights: ► The (001) surface of magnetite is imaged by spin-polarized low-energy electron microscopy. ► The magnetic domain microstructure is resolved. ► Magnetic easy axes in this surface are found to be along <110> directions. ► Magnetic domain wall structures include wide Néel-caps.

  19. The Kondo effect of an adatom in graphene and its scanning tunneling spectroscopy

    International Nuclear Information System (INIS)

    Li Lin; Ni Yangyang; Zhong Yin; Fang Tiefeng; Luo Honggang

    2013-01-01

    We study the Kondo effect of a single magnetic adatom on the surface of graphene. The unique linear dispersion relation near the Dirac points in graphene makes it easier for the magnetic atom to form a local magnetic moment, which simply means that the Kondo resonance can be observed in a wider parameter region than in the metallic host. Our study indicates that the Kondo resonance, whenever the chemical potential is tuned away from the Dirac points, can indeed occur ranging from the Kondo regime, to the mixed valence, even to the empty orbital regime defined in the conventional metal host. While the Kondo resonance appears as a sharp peak in the Kondo regime, it has a peak-dip structure and/or an anti-resonance in the mixed valence and empty orbital regimes, which result from the Fano resonance due to the significant background due to dramatic broadening of the impurity level in graphene. We also study the scanning tunneling microscopy (STM) spectra of the adatom and they show obvious particle–hole asymmetry when the chemical potential is tuned by the gate voltages applied to the graphene. Finally, we explore the influence of the direct tunneling channel between the STM tip and the graphene on the Kondo resonance and find that the lineshape of the Kondo resonance is unaffected, which can be attributed to an unusually large asymmetry factor in graphene. Our study indicates that graphene is an ideal platform to systematically study Kondo physics and these results are useful to further stimulate relevant experimental studies on the system. (paper)

  20. Berry phase and shot noise for spin-polarized and entangled electrons

    International Nuclear Information System (INIS)

    Wang Pei; Tang Weihua; Lu Dinghui; Jiang Lixia; Zhao Xuean

    2007-01-01

    Shot noise for entangled and spin-polarized states in a four-probe geometric setup has been studied by adding two rotating magnetic fields in an incoming channel. Our results show that the noise power oscillates as the magnetic fields vary. The singlet, entangled triplet and polarized states can be distinguished by adjusting the magnetic fields. The Berry phase can be derived by measuring the shot noise power

  1. Application of the Ursell-Mayer method in the theory of spin-polarized atomic hydrogen

    International Nuclear Information System (INIS)

    Kilic, S.; Radelja, T.

    1981-01-01

    Employing the Ursell-Mayer method and Ljolje semi-free gas model analytic relations describing ground state properties (energy, pressure, compressibility, sound velocity, radial distribution function and one-particle density matrix) of spin-polarized atomic hydrogen were derived. The expressions are valid up to density 2 10 26 atoms/m 3 . It was found out that at density of 2 10 26 atoms/m 3 the condensation of particle in momentum space is 88% (at absolute zero). (orig.)

  2. Spin polarization in quantum dots by radiation field with circular polarization

    CERN Document Server

    Bulgakov, E N

    2001-01-01

    For circular quantum dot (QD) with account of the Razhba spin-orbit interaction (SOI) an exact energy spectrum is obtained. For the small SOI constant the Eigen functions of the QD are found. It is shown that application of radiation field with circular polarization lifts the Kramers degeneracy of the Eigen states of the QD. Effective spin polarization of transmitted electrons through the QD by radiation field with circular polarization is demonstrated

  3. The critical role of the barrier thickness in spin filter tunneling

    International Nuclear Information System (INIS)

    Miller, Casey W.

    2009-01-01

    Spin filter tunneling is considered in the low bias limit as functions of the temperature dependent barrier parameters. We demonstrate the generation of spin polarized tunneling currents in relation to the magnetic order parameter, and discuss how an interfacially suppressed order parameter leads to a temperature dependent tunneling current asymmetry. Analyzing the full parameter space reveals that the often overlooked barrier thickness plays a critical role in spin filter tunneling. With all else fixed, thicker barriers yield higher spin polarization, and allow a given polarization to be achieved at higher temperatures. This insight may open the door for new materials to serve as spin filter barriers.

  4. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yuan, E-mail: liyuan12@semi.ac.cn; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai, E-mail: yhchen@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China); Niu, Zhichuan; Xiang, Wei; Hao, Hongyue [The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)

    2015-05-11

    In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed.

  5. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

    International Nuclear Information System (INIS)

    Li, Yuan; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai; Niu, Zhichuan; Xiang, Wei; Hao, Hongyue

    2015-01-01

    In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed

  6. Observation of the spin-polarized surface state in a noncentrosymmetric superconductor BiPd.

    Science.gov (United States)

    Neupane, Madhab; Alidoust, Nasser; Hosen, M Mofazzel; Zhu, Jian-Xin; Dimitri, Klauss; Xu, Su-Yang; Dhakal, Nagendra; Sankar, Raman; Belopolski, Ilya; Sanchez, Daniel S; Chang, Tay-Rong; Jeng, Horng-Tay; Miyamoto, Koji; Okuda, Taichi; Lin, Hsin; Bansil, Arun; Kaczorowski, Dariusz; Chou, Fangcheng; Hasan, M Zahid; Durakiewicz, Tomasz

    2016-11-07

    Recently, noncentrosymmetric superconductor BiPd has attracted considerable research interest due to the possibility of hosting topological superconductivity. Here we report a systematic high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES study of the normal state electronic and spin properties of BiPd. Our experimental results show the presence of a surface state at higher-binding energy with the location of Dirac point at around 700 meV below the Fermi level. The detailed photon energy, temperature-dependent and spin-resolved ARPES measurements complemented by our first-principles calculations demonstrate the existence of the spin-polarized surface states at high-binding energy. The absence of such spin-polarized surface states near the Fermi level negates the possibility of a topological superconducting behaviour on the surface. Our direct experimental observation of spin-polarized surface states in BiPd provides critical information that will guide the future search for topological superconductivity in noncentrosymmetric materials.

  7. High-frequency dynamics of spin-polarized carriers and photons in a laser

    Science.gov (United States)

    Saha, D.; Basu, D.; Bhattacharya, P.

    2010-11-01

    The high-frequency dynamics of spin-polarized carriers and photons in a spin laser have been studied. The transient response of the device obtained from the rate equations is characterized by two sets of relaxation oscillations in the carrier and photon distributions corresponding to the two polarization modes. Consequently two distinct resonant peaks are observed in the small-signal modulation response. The calculated transient characteristics indicate that the best results are obtained from a spin laser when only the favored polarization mode, with lower threshold, is operational. Under this condition the small-signal modulation bandwidth is higher than that in a conventional laser, the threshold current is lower and the output polarization can be 100% with appropriate bias conditions, independent of the spin polarization of carriers in the active region. Measurements were made at 230 K on a InAs/GaAs quantum dot spin vertical cavity surface emitting laser. A time-averaged output polarization of 55% is measured with an active region spin polarization of 5-6% . The experimental results are in good agreement with calculated data.

  8. Electronic structure of carbon nanotube systems measured with scanning tunneling microscopy

    Science.gov (United States)

    Hornbaker, Daniel Jay

    Carbon fullerenes are unusually structured molecules with robust mechanical and electronic properties. Their versatility is astounding; envisioned applications range from field emission displays to impregnated metal composites, battery storage media, and nanoelectronic devices. The combination of simple constituency, diverse behavior, and ease of fabrication makes these materials a cornerstone topic in current research. This thesis details scanning tunneling microscopy (STM) experiments investigating how carbon nanotube fullerenes interact with and couple to their local environment. Scanning tunneling microscopy continues to be a key method for characterizing fullerenes, particularly in regards to their electronic properties. The atomic scale nature of this technique makes it uniquely suited for observing individual molecules and determining correlations between locally measured electronic properties and the particular environment of the molecule. The primary subject of this study is single-wall carbon nanotubes (SWNTs), which were observed under various perturbative influences resulting in measurable changes in the electronic structure. Additionally, fullerene heterostructures formed by the encapsulation of C60 molecules within the hollow interiors of SWNTs were characterized for the first time with STM. These novel macromolecules (dubbed "peapods") demonstrate the potential for custom engineering the properties of fullerene materials. Measurements indicate that the properties of individual nanotubes depend sensitively on local interactions. In particular, pronounced changes in electronic behavior are observed in nanotubes exhibiting mechanical distortion, interacting with extrinsic materials (including other nanotubes), and possessing intrinsic defects in the atomic lattice. In fullerene peapods, while no discernable change in the atomic ordering of the encapsulating nanotubes was evident, the presence of interior C60 molecules has a dramatic effect on the

  9. Current-induced spin polarization in InGaAs and GaAs epilayers with varying doping densities

    Science.gov (United States)

    Luengo-Kovac, M.; Huang, S.; Del Gaudio, D.; Occena, J.; Goldman, R. S.; Raimondi, R.; Sih, V.

    2017-11-01

    The current-induced spin polarization and momentum-dependent spin-orbit field were measured in InxGa1 -xAs epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and carrier concentrations and lower mobilities were found to have larger electrical spin generation efficiencies. Furthermore, current-induced spin polarization was detected in GaAs epilayers despite the absence of measurable spin-orbit fields, indicating that the extrinsic contributions to the spin-polarization mechanism must be considered. Theoretical calculations based on a model that includes extrinsic contributions to the spin dephasing and the spin Hall effect, in addition to the intrinsic Rashba and Dresselhaus spin-orbit coupling, are found to reproduce the experimental finding that the crystal direction with the smaller net spin-orbit field has larger electrical spin generation efficiency and are used to predict how sample parameters affect the magnitude of the current-induced spin polarization.

  10. Controlling molecular condensation/diffusion of copper phthalocyanine by local electric field induced with scanning tunneling microscope tip

    Science.gov (United States)

    Nagaoka, Katsumi; Yaginuma, Shin; Nakayama, Tomonobu

    2018-02-01

    We have discovered the condensation/diffusion phenomena of copper phthalocyanine (CuPc) molecules controlled with a pulsed electric field induced by the scanning tunneling microscope tip. This behavior is not explained by the conventional induced dipole model. In order to understand the mechanism, we have measured the electronic structure of the molecule by tunneling spectroscopy and also performed theoretical calculations on molecular orbitals. These data clearly indicate that the molecule is positively charged owing to charge transfer to the substrate, and that hydrogen bonding exists between CuPc molecules, which makes the molecular island stable.

  11. Electron-spin polarization of photoions produced through photoionization from the laser-excited triplet state of Sr

    International Nuclear Information System (INIS)

    Yonekura, Nobuaki; Nakajima, Takashi; Matsuo, Yukari; Kobayashi, Tohru; Fukuyama, Yoshimitsu

    2004-01-01

    We report the detailed experimental study on the production of electron-spin-polarized Sr + ions through one-photon resonant two-photon ionization via laser-excited 5s5p 3 P 1 (M J =+1) of Sr atoms produced by laser-ablation. We have experimentally confirmed that the use of laser-ablation for the production of Sr atoms prior to photoionization does not affect the electron-spin polarization. We have found that the degree of electron-spin polarization is 64±9%, which is in good agreement with our recent theoretical prediction. As we discuss in detail, we infer, from a simple analysis, that photoelectrons, being the counterpart of electron-spin-polarized Sr + ions, have approximately the same degree of electron-spin polarization. Our experimental results demonstrate that the combined use of laser-ablation technique and pulsed lasers for photoionization would be a compact and effective way to realize a pulsed source for spin-polarized ions and electrons for the studies of various spin-dependent dynamics in chemical physics

  12. Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy

    Directory of Open Access Journals (Sweden)

    Thomas König

    2011-01-01

    Full Text Available Surfaces of thin oxide films were investigated by means of a dual mode NC-AFM/STM. Apart from imaging the surface termination by NC-AFM with atomic resolution, point defects in magnesium oxide on Ag(001 and line defects in aluminum oxide on NiAl(110, respectively, were thoroughly studied. The contact potential was determined by Kelvin probe force microscopy (KPFM and the electronic structure by scanning tunneling spectroscopy (STS. On magnesium oxide, different color centers, i.e., F0, F+, F2+ and divacancies, have different effects on the contact potential. These differences enabled classification and unambiguous differentiation by KPFM. True atomic resolution shows the topography at line defects in aluminum oxide. At these domain boundaries, STS and KPFM verify F2+-like centers, which have been predicted by density functional theory calculations. Thus, by determining the contact potential and the electronic structure with a spatial resolution in the nanometer range, NC-AFM and STM can be successfully applied on thin oxide films beyond imaging the topography of the surface atoms.

  13. Proximity Effect between Two Superconductors Spatially Resolved by Scanning Tunneling Spectroscopy

    Directory of Open Access Journals (Sweden)

    V. Cherkez

    2014-03-01

    Full Text Available We present a combined experimental and theoretical study of the proximity effect in an atomic-scale controlled junction between two different superconductors. Elaborated on a Si(111 surface, the junction comprises a Pb nanocrystal with an energy gap Δ_{1}=1.2  meV, connected to a crystalline atomic monolayer of lead with Δ_{2}=0.23  meV. Using in situ scanning tunneling spectroscopy, we probe the local density of states of this hybrid system both in space and in energy, at temperatures below and above the critical temperature of the superconducting monolayer. Direct and inverse proximity effects are revealed with high resolution. Our observations are precisely explained with the help of a self-consistent solution of the Usadel equations. In particular, our results demonstrate that in the vicinity of the Pb islands, the Pb monolayer locally develops a finite proximity-induced superconducting order parameter, well above its own bulk critical temperature. This leads to a giant proximity effect where the superconducting correlations penetrate inside the monolayer a distance much larger than in a nonsuperconducting metal.

  14. Visualizing period fluctuations in strained-layer superlattices with scanning tunneling microscopy

    Science.gov (United States)

    Kanedy, K.; Lopez, F.; Wood, M. R.; Gmachl, C. F.; Weimer, M.; Klem, J. F.; Hawkins, S. D.; Shaner, E. A.; Kim, J. K.

    2018-01-01

    We show how cross-sectional scanning tunneling microscopy (STM) may be used to accurately map the period fluctuations throughout epitaxial, strained-layer superlattices based on the InAs/InAsSb and InGaAs/InAlAs material systems. The concept, analogous to Bragg's law in high-resolution x-ray diffraction, relies on an analysis of the [001]-convolved reciprocal-space satellite peaks obtained from discrete Fourier transforms of individual STM images. Properly implemented, the technique enables local period measurements that reliably discriminate vertical fluctuations localized to within ˜5 superlattice repeats along the [001] growth direction and orthogonal, lateral fluctuations localized to within ˜40 nm along directions in the growth plane. While not as accurate as x-ray, the inherent, single-image measurement error associated with the method may be made as small as 0.1%, allowing the vertical or lateral period fluctuations contributing to inhomogeneous energy broadening and carrier localization in these structures to be pinpointed and quantified. The direct visualization of unexpectedly large, lateral period fluctuations on nanometer length scales in both strain-balanced systems supports a common understanding in terms of correlated interface roughness.

  15. Cross-sectional scanning tunneling microscopy of Ga1-xMnxAs/GaAs Heterostructures

    Science.gov (United States)

    Roushan, Pedram; Richardella, Anthony; Mack, Shawn; Awschalom, David; Yazdani, Ali

    2008-03-01

    We have used a cryogenic scanning tunneling microscope (STM) to perform cross-sectional imaging studies of GaMnAs heterostructures. The heterostructures, consisting of a p-type buffer followed by a 3% Mn doped layer, were grown on a n-type GaAs substrate by molecular-beam epitaxy and cleaved in situ for STM measurements. The topographic measurements on the GaMnAs layer showed a variety of long range electronic structure modulations on the order of a few nm due to high level of disorder and compensation. Combining bias-dependent imaging and spectroscopy, we have used the STM to identify electronic features due to Mn dopants and other defects. In particular, we find that Mn dopants on the top most layer act as deep acceptors and exhibits similar topographic and spectroscopic features as our previous work [1] on Mn adatoms substituted into GaAs using STM manipulation techniques. [1] D. Kitchen, A. Richardella, J-M. Tang, M. Flatte, A. Yazdani, Nature 442, 436--439 (2006)

  16. Oxidation of graphene on Ru(0 0 0 1) studied by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Liao, Q.; Zhang, H.J.; Wu, K.; Li, H.Y.; Bao, S.N.; He, P.

    2010-01-01

    The oxidation of graphene layer on Ru(0 0 0 1) has been investigated by means of scanning tunneling microscopy. Graphene overlayer can be formed by decomposing ethyne on Ru(0 0 0 1) at a temperature of about 1000 K. The lattice mismatch between the graphene overlayer and the substrate causes a moire pattern with a superstructure in a periodicity of about 30 A. The oxidation of graphene/Ru(0 0 0 1) was performed by exposure the sample to O 2 gas at 823 K. The results showed that, at the initial stage, the oxygen intercalation between the graphene and the Ru(0 0 0 1) substrate takes place at step edges, and extends on the lower steps. The oxygen intercalation decouples the graphene layer from the Ru(0 0 0 1) substrate. More oxygen intercalation yields wrinkled bumps on the graphene surface. The oxidation of graphene, or the removal of carbon atoms can be attributed to a process of the combination of the carbon atoms with atomic oxygen to form volatile reaction products. Finally, the Ru(0 0 0 1)-(2 x 1)O phase was observed after the graphene layer is fully removed by oxidation.

  17. An experimental study of furan adsorption and decomposition on vicinal palladium surfaces using scanning tunneling microscopy

    Science.gov (United States)

    Loui, A.; Chiang, S.

    2018-04-01

    The intact adsorption and decomposition of furan (C4H4O) on vicinal palladium surfaces with (111)-oriented terraces has been studied by scanning tunneling microscopy (STM) over a range of temperatures. STM images at 225 K show that furan molecules lie flat and prefer to adsorb at upper step edges. At 225 K, furan molecules adsorbed on "narrow" terraces of 20 to 45 Å in width appear to diffuse more readily than those adsorbed on "wide" terraces of 160 to 220 Å. A distinct population of smaller features appears in STM images on "narrow" terraces at 288 K and on "wide" terraces at 415 K and is identified with the C3H3 decomposition product, agreeing with prior studies which demonstrated that furan dissociates on Pd(111) to yield carbon monoxide (CO) and a C3H3 moiety in the 280 to 320 K range. Based on our direct visualization of this reaction using STM, we propose a spatial mechanism in which adsorption of furan at upper step edges allows catalysis of the dissociation, followed by diffusion of the product to lower step edges.

  18. A 30 mK, 13.5 T scanning tunneling microscope with two independent tips

    Science.gov (United States)

    Roychowdhury, Anita; Gubrud, M. A.; Dana, R.; Anderson, J. R.; Lobb, C. J.; Wellstood, F. C.; Dreyer, M.

    2014-04-01

    We describe the design, construction, and performance of an ultra-low temperature, high-field scanning tunneling microscope (STM) with two independent tips. The STM is mounted on a dilution refrigerator and operates at a base temperature of 30 mK with magnetic fields of up to 13.5 T. We focus on the design of the two-tip STM head, as well as the sample transfer mechanism, which allows in situ transfer from an ultra high vacuum preparation chamber while the STM is at 1.5 K. Other design details such as the vibration isolation and rf-filtered wiring are also described. Their effectiveness is demonstrated via spectral current noise characteristics and the root mean square roughness of atomic resolution images. The high-field capability is shown by the magnetic field dependence of the superconducting gap of CuxBi2Se3. Finally, we present images and spectroscopy taken with superconducting Nb tips with the refrigerator at 35 mK that indicate that the effective temperature of our tips/sample is approximately 184 mK, corresponding to an energy resolution of 16 μeV.

  19. Scanning tunneling microscopy/spectroscopy of picene thin films formed on Ag(111)

    Energy Technology Data Exchange (ETDEWEB)

    Yoshida, Yasuo, E-mail: yyoshida@issp.u-tokyo.ac.jp; Yokosuka, Takuya; Hasegawa, Yukio, E-mail: hasegawa@issp.u-tokyo.ac.jp [The Institute of Solid State Physics, The University of Tokyo, Kashiwa 277-8581 (Japan); Yang, Hung-Hsiang [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Huang, Hsu-Sheng; Guan, Shu-You; Su, Wei-Bin; Chang, Chia-Seng [Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan (China); Yanagisawa, Susumu [Department of Physics and Earth Science Department, University of the Ryukyus, 1 Nishihara, Okinawa 903-0213 (Japan); Lin, Minn-Tsong [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China); Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Hoffmann, Germar [The Institute of Solid State Physics, The University of Tokyo, Kashiwa 277-8581 (Japan); Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2014-09-21

    Using ultrahigh-vacuum low-temperature scanning tunneling microscopy and spectroscopy combined with first principles density functional theory calculations, we have investigated structural and electronic properties of pristine and potassium (K)-deposited picene thin films formed in situ on a Ag(111) substrate. At low coverages, the molecules are uniformly distributed with the long axis aligned along the [112{sup ¯}] direction of the substrate. At higher coverages, ordered structures composed of monolayer molecules are observed, one of which is a monolayer with tilted and flat-lying molecules resembling a (11{sup ¯}0) plane of the bulk crystalline picene. Between the molecules and the substrate, the van der Waals interaction is dominant with negligible hybridization between their electronic states; a conclusion that contrasts with the chemisorption exhibited by pentacene molecules on the same substrate. We also observed a monolayer picene thin film in which all molecules were standing to form an intermolecular π stacking. Two-dimensional delocalized electronic states are found on the K-deposited π stacking structure.

  20. Self-Organized Graphene Nanoribbons on SiC(0001) Studied with Scanning Tunneling Microscopy

    Science.gov (United States)

    Torrance, David; Zhang, Baiqian; Hoang, Tien; First, Phillip

    2012-02-01

    Graphene nanoribbons grown directly on nanofacets of SiC(0001) offer an attractive union of top-down and bottom-up fabrication techniques. Nanoribbons have been shown to form on the facets of templated silicon carbide substrates,ootnotetextSprinkle et al., Nat. Nanotech. 5, 727 (2010). but also appear spontaneously along step-bunches on vicinal SiC(0001) miscut slightly towards . These self-organized graphene nanoribbons were characterized with low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) in ultra-high vacuum. Our measurements indicate that the graphene forms a continuous ``buffer layer'' across the SiC(0001) terraces during nanoribbon formation, with the zigzag edge of the buffer layer aligned parallel to the step-bunched nanofacets. Scanning tunneling microscopy/spectroscopy (STM/STS) was used to characterize the topography and electrical characteristics of the graphene nanoribbons. These measurements indicate that the graphene nanoribbons are highly-crystalline with predominantly zigzag edges.

  1. Transition between scanning tunneling microscopy images of alkane derivatives on graphite

    International Nuclear Information System (INIS)

    Hibino, Masahiro; Tsuchiya, Hiroshi

    2015-01-01

    Graphical abstract: - Highlights: • SAMs of dialkyl sulfides form at the liquid–graphite interface. • STM contrast of molecules change reversibly between zigzag and aligned bright spot patterns. • The free energy for contrast change is smaller than the thermal energy (RT). • STM contrast change is caused by electronic effects and registry of the alkyl chains. - Abstract: Self-assembled monolayers of alkylated sulfides containing two alkyl chains and a sulfur atom positioned at the center of the molecules were studied on a graphite surface using scanning tunneling microscopy (STM). STM images of the closed-packed alkyl chains that extend linearly from the sulfur atoms change reversibly between a zigzag pattern and an aligned bright spot pattern on a time scale of minutes. The observation times of the zigzag and aligned bright spot patterns indicate that the difference between the free energies of these two stable molecular configurations with respect to the graphite surface is smaller than their thermal energies in the presence of a solvent, and 10 times smaller than the theoretical free energy between parallel and perpendicular configurations of the alkyl chains on graphite under vacuum. The change in the contrast of the STM images occurred owing to the electronic effects that depend on the registry of the alkyl chains on the graphite surface, and not by the classical observation of transfer between parallel and perpendicular orientations of alkyl chains on the surface.

  2. Adsorption stages of O on Ru(0001) studied by means of scanning tunnelling microscopy

    CERN Document Server

    Meinel, K; Ammer, C; Beckmann, A; Neddermeyer, H

    1997-01-01

    The adsorption of O on Ru(0001) at a temperature of 400 K is studied in detail by means of scanning tunnelling microscopy (STM). With increasing O coverage, an ordered p(2x2) structure develops, followed by a p(2x1) structure. While the p(2x2) structure grows via island formation, the p(2x1) structure is abruptly formed by a disorder - order phase transition. After completion of the p(2x2) structure at a coverage of 0.25 ML, the surface develops a rough structure where the (2x2) units remain visible but appear with different heights. As the origin of this phenomenon, we propose additional O-O interactions and/or subsurface O due to the increase in O coverage. At coverages between 0.3 monolayer (ML) and 0.35 ML, different preformations of the p(2x1) structure are observed. First, small fragments of p(2x1) rows develop, which are randomly distributed over the surface and rotated by 120 deg. with respect to each other. They grow in one dimension and induce a criss-cross arrangement of linear chains of O atoms. T...

  3. Probing the location of displayed cytochrome b562 on amyloid by scanning tunnelling microscopy

    International Nuclear Information System (INIS)

    Forman, C J; Barker, P D; Wang, N; Durkan, C; Yang, Z Y; Mowat, C G; Jarvis, S

    2013-01-01

    Amyloid fibres displaying cytochrome b 562 were probed using scanning tunnelling microscopy (STM) in vacuo. The cytochromes are electron transfer proteins containing a haem cofactor and could, in principle, mediate electron transfer between the tip and the gold substrate. If the core fibres were insulating and electron transfer within the 3D haem network was detected, then the electron transport properties of the fibre could be controlled by genetic engineering. Three kinds of STM images were obtained. At a low bias ( 562 was not detected by STM, which was attributed to low adhesion, whereas a monomeric multi-haem protein, GSU1996, was readily imaged. We conclude that the fibre superstructure may be intermittently conducting, that the cytochromes have been seen within the fibres and that they are too far apart for detectable current flow between sites to occur. We predict that GSU1996, being 10 nm long, is more likely to mediate successful electron transfer along the fibre as well as being more readily detectable when displayed from amyloid. (paper)

  4. Two-photon-induced hot-electron transfer to a single molecule in a scanning tunneling microscope

    International Nuclear Information System (INIS)

    Wu, S. W.; Ho, W.

    2010-01-01

    The junction of a scanning tunneling microscope (STM) operating in the tunneling regime was irradiated with femtosecond laser pulses. A photoexcited hot electron in the STM tip resonantly tunnels into an excited state of a single molecule on the surface, converting it from the neutral to the anion. The electron-transfer rate depends quadratically on the incident laser power, suggesting a two-photon excitation process. This nonlinear optical process is further confirmed by the polarization measurement. Spatial dependence of the electron-transfer rate exhibits atomic-scale variations. A two-pulse correlation experiment reveals the ultrafast dynamic nature of photoinduced charging process in the STM junction. Results from these experiments are important for understanding photoinduced interfacial charge transfer in many nanoscale inorganic-organic structures.

  5. Demonstration of synchronised scanning Lidar measurements of 2D velocity fields in a boundary-layer wind tunnel

    Science.gov (United States)

    van Dooren, M. F.; Kühn, M.; PetroviĆ, V.; Bottasso, C. L.; Campagnolo, F.; Sjöholm, M.; Angelou, N.; Mikkelsen, T.; Croce, A.; Zasso, A.

    2016-09-01

    This paper combines the currently relevant research methodologies of scaled wind turbine model experiments in wind tunnels with remote-sensing short-range WindScanner Lidar measurement technology. The wind tunnel of the Politecnico di Milano was equipped with three wind turbine models and two short-range WindScanner Lidars to demonstrate the benefits of synchronised scanning Lidars in such experimental surroundings for the first time. The dual- Lidar system can provide fully synchronised trajectory scans with sampling time scales ranging from seconds to minutes. First, staring mode measurements were compared to hot wire probe measurements commonly used in wind tunnels. This yielded goodness of fit coefficients of 0.969 and 0.902 for the 1 Hz averaged u- and v-components of the wind speed, respectively, validating the 2D measurement capability of the Lidar scanners. Subsequently, the measurement of wake profiles on a line as well as wake area scans were executed to illustrate the applicability of Lidar scanning to measuring small scale wind flow effects. The downsides of Lidar with respect to the hot wire probes are the larger measurement probe volume and the loss of some measurements due to moving blades. In contrast, the benefits are the high flexibility in conducting both point measurements and area scanning, and the fact that remote sensing techniques do not disturb the flow while measuring. The research campaign revealed a high potential for using short-range WindScanner Lidar for accurately measuring small scale flow structures in a wind tunnel.

  6. Thermoelectric-induced spin currents in single-molecule magnet tunnel junctions

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang; Wang, Ruiqiang; Wang, Baigeng; Xing, D. Y.

    2010-12-01

    A molecular spin-current generator is proposed, which consists of a single-molecule magnet (SMM) coupled to two normal metal electrodes with temperature gradient. It is shown that this tunneling junction can generate a highly spin-polarized current by thermoelectric effects, whose flowing direction and spin polarization can be changed by adjusting the gate voltage applied to the SMM. This device can be realized with current technologies and may have practical use in spintronics and quantum information.

  7. High Pressure Scanning Tunneling Microscopy Studies of AdsorbateStructure and Mobility during Catalytic Reactions: Novel Design of anUltra High Pressure, High Temperature Scanning Tunneling MicroscopeSystem for Probing Catalytic Conversions

    Energy Technology Data Exchange (ETDEWEB)

    Tang, David Chi-Wai [Univ. of California, Berkeley, CA (United States)

    2005-05-16

    The aim of the work presented therein is to take advantage of scanning tunneling microscope’s (STM) capability for operation under a variety of environments under real time and at atomic resolution to monitor adsorbate structures and mobility under high pressures, as well as to design a new generation of STM systems that allow imaging in situ at both higher pressures (35 atm) and temperatures (350 °C).

  8. Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

    International Nuclear Information System (INIS)

    Kumar, Mahesh; Roul, Basanta; Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B.; Kalghatgi, A. T.

    2011-01-01

    InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.

  9. Demonstrating the utility of boron based precursor molecules for selective area deposition in a scanning tunneling microscope

    International Nuclear Information System (INIS)

    Perkins, F.K.; Onellion, M.; Lee, S.; Bowben, T.A.

    1992-01-01

    The scanning tunneling microscope (STM) can be used to selectively deposit material from a gaseous precursor compound. Ultrasmall (less than a 100 nm across) spatial dimensions for selective area deposition may be achieved by this means. In this paper the authors outline a scheme foreselecting and designing main group cluster compounds and organometallics for this type of selective area deposition using nido-decaborane(14) as an example

  10. Scanning tunneling potentiometry, charge transport, and Landauer's resistivity dipole from the quantum to the classical transport regime

    Science.gov (United States)

    Morr, Dirk K.

    2017-05-01

    Using the nonequilibrium Keldysh formalism, we investigate the spatial relation between the electrochemical potential measured in scanning tunneling potentiometry, and local current patterns over the entire range from the quantum to the classical transport regime. These quantities show similar spatial patterns near the quantum limit but are related by Ohm's law only in the classical regime. We demonstrate that defects induce a Landauer residual resistivity dipole in the electrochemical potential with the concomitant spatial current pattern representing the field lines of the dipole.

  11. In silico simulations of tunneling barrier measurements for molecular orbital-mediated junctions: A molecular orbital theory approach to scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Terryn, Raymond J.; Sriraman, Krishnan; Olson, Joel A., E-mail: jolson@fit.edu; Baum, J. Clayton, E-mail: cbaum@fit.edu [Department of Chemistry, Florida Institute of Technology, 150 West University Boulevard, Melbourne, Florida 32901 (United States); Novak, Mark J. [Department of Chemistry and Applied Biological Sciences, South Dakota School of Mines and Technology, 501 E. Saint Joseph Street, Rapid City, South Dakota 57701 (United States)

    2016-09-15

    A new simulator for scanning tunneling microscopy (STM) is presented based on the linear combination of atomic orbitals molecular orbital (LCAO-MO) approximation for the effective tunneling Hamiltonian, which leads to the convolution integral when applied to the tip interaction with the sample. This approach intrinsically includes the structure of the STM tip. Through this mechanical emulation and the tip-inclusive convolution model, dI/dz images for molecular orbitals (which are closely associated with apparent barrier height, ϕ{sub ap}) are reported for the first time. For molecular adsorbates whose experimental topographic images correspond well to isolated-molecule quantum chemistry calculations, the simulator makes accurate predictions, as illustrated by various cases. Distortions in these images due to the tip are shown to be in accord with those observed experimentally and predicted by other ab initio considerations of tip structure. Simulations of the tunneling current dI/dz images are in strong agreement with experiment. The theoretical framework provides a solid foundation which may be applied to LCAO cluster models of adsorbate–substrate systems, and is extendable to emulate several aspects of functional STM operation.

  12. Characterization and Properties of Oligothiophenes Using Scanning Tunneling Microscopy for Possible Use in Organic Electronics

    International Nuclear Information System (INIS)

    Bishara, E.M.El.

    2009-01-01

    A scanning tunneling microscopy study has been made on a group of alkyl-substituted oligothiophenes. The self-assembled monolayers of this type of semi-conducting oligomers on graphite were observed and characterized. To control the self-assembly, it is important to first understand the forces that drive the spontaneous ordering of molecules at interfaces. For the identification of the forces, several substituted oligothiophenes were examined: carboxylic acid groups, methyl ester carboxylic acid, and iodine atoms at one end and benzyl esters at the other end of the oligomers this is in addition to the non-functionalized oligothiophehens, Self-assembled monolayers of these molecules were then examined by STM. A detailed analysis of the driving forces and parameters controlling the formation of the self-assembled 2- D crystal monolayers was carried out by performing modeling of the experimental observations. The theoretical calculations gave us a conclusive insight into the intermolecular interactions, which lead to the observed conformation of molecules on the surface. An attempt to react two iodinated oligomers on the surface after the formation of the monolayer has been done; a topochemical reaction studies using UV/Vis light irradiation has been preceded. The targeted reaction was achieved. This can be considered as a great step towards the formation of nano-wires and other organic electronic devices. The applicability of the above method of force-driven self organisation in different patterns was examined as template for building donor-nano structures for electronic devices. It was necessary to examine the stability of the formed templates in air. The monolayers were left to dry and STM images were taken; C60 was then added to the monolayer, and the complexation of the C60 (as acceptor) with the formed monolayer template was examined.

  13. High vacuum tip-enhanced Raman spectroscope based on a scanning tunneling microscope.

    Science.gov (United States)

    Fang, Yurui; Zhang, Zhenglong; Sun, Mengtao

    2016-03-01

    In this paper, we present the construction of a high-vacuum tip-enhanced Raman spectroscopy (HV-TERS) system that allows in situ sample preparation and measurement. A detailed description of the prototype instrument is presented with experimental validation of its use and novel ex situ experimental results using the HV-TERS system. The HV-TERS system includes three chambers held under a 10(-7) Pa vacuum. The three chambers are an analysis chamber, a sample preparation chamber, and a fast loading chamber. The analysis chamber is the core chamber and contains a scanning tunneling microscope (STM) and a Raman detector coupled with a 50 × 0.5 numerical aperture objective. The sample preparation chamber is used to produce single-crystalline metal and sub-monolayer molecular films by molecular beam epitaxy. The fast loading chamber allows ex situ preparation of samples for HV-TERS analysis. Atomic resolution can be achieved by the STM on highly ordered pyrolytic graphite. We demonstrate the measurement of localized temperature using the Stokes and anti-Stokes TERS signals from a monolayer of 1,2-benzenedithiol on a gold film using a gold tip. Additionally, plasmonic catalysis can be monitored label-free at the nanoscale using our device. Moreover, the HV-TERS experiments show simultaneously activated infrared and Raman vibrational modes, Fermi resonance, and some other non-linear effects that are not observed in atmospheric TERS experiments. The high spatial and spectral resolution and pure environment of high vacuum are beneficial for basic surface studies.

  14. A novel high temperature scanning tunneling microscope for investigating semiconductor surfaces

    Science.gov (United States)

    Lamb, Mark Alan

    2001-11-01

    The issues concerning the description of structural and dynamic features at the nanometer scale has become an active field of research in surface science. The development of the scanning tunneling microscope (STM) has begun only recently to contribute substantially in this effort. For this dissertation project, the author has designed, constructed, and utilized a high temperature ultra high vacuum STM (HT-UHV-STM) for investigating semiconducting surfaces from room temperature to 790°C. In order to isolate the instrument from external noise, the author has developed and demonstrated a novel method of approaching decoupled passive magnetic levitation for vibration isolation. Using advanced magnet technology currently available, this isolation method could achieve resonance frequencies as low as 10-3 Hz for levitation pressures as high as several MPa in a single stage. The instrument has been used to study the clean Si(111) surface at high temperatures. The electromigration phenomenon has been utilized to modify the surface steps and produce metastable reconstruction zones of the "1 x 1" phase and 5 x 5 islands. The growth of the thermodynamically favored 7 x 7 reconstruction has been observed at high temperatures within these metastable phases. The production of nanostructures on the surface by the tip of the STM has been achieved and their thermal relaxation observed and analyzed. Several new observations include the appearance of periodic oscillations in the number of Si atoms constituting each of a pair of 5 x 5 magic islands, imaging of local melting and apparent sputtering of the surface by the tip, and the spontaneous formation of clusters by heat treatment.

  15. What is the orientation of the tip in a scanning tunneling microscope?

    Science.gov (United States)

    Mándi, Gábor; Teobaldi, Gilberto; Palotás, Krisztián

    2015-05-01

    The atomic structure and electronic properties of the tip apex can strongly affect the contrast of scanning tunneling microscopy (STM) images. This is a critical issue in STM imaging given the, to date unsolved, experimental limitations in precise control of the tip apex atomic structure. Definition of statistically robust procedures to indirectly obtain information on the tip apex structure is highly desirable as it would open up for more rigorous interpretation and comparison of STM images from different experiments. To this end, here we introduce a statistical correlation analysis method to obtain information on the local geometry and orientation of the tip used in STM experiments based on large scale simulations. The key quantity is the relative brightness correlation of constant-current topographs between experimental and simulated data. This correlation can be analyzed statistically for a large number of modeled tip orientations and geometries. Assuming a stable tip during the STM scans and based on the correlation distribution, it is possible to determine the tip orientations that are most likely present in an STM experiment, and exclude other orientations. This is especially important for substrates such as highly oriented pyrolytic graphite (HOPG) since its STM contrast is strongly tip dependent, which makes interpretation and comparison of STM images very challenging. We illustrate the applicability of our method considering the HOPG surface in combination with tungsten tip models of two different apex geometries and 18,144 different orientations. We calculate constant-current profiles along the direction of the HOPG(0 0 0 1) surface in the | V | ⩽ 1V bias voltage range, and compare them with experimental data. We find that a blunt tip model provides better correlation with the experiment for a wider range of tip orientations and bias voltages than a sharp tip model. Such a combination of experiments and large scale simulations opens up the way for

  16. Demonstration of synchronised scanning Lidar measurements of 2D velocity fields in a boundary-layer wind tunnel

    DEFF Research Database (Denmark)

    van Dooren, M F; Kühn, M.; Petrovic, V.

    2016-01-01

    of wake profiles on a line as well as wake area scans were executed to illustrate the applicability of Lidar scanning to measuring small scale wind flow effects. The downsides of Lidar with respect to the hot wire probes are the larger measurement probe volume and the loss of some measurements due......-range WindScanner Lidars to demonstrate the benefits of synchronised scanning Lidars in such experimental surroundings for the first time. The dualLidar system can provide fully synchronised trajectory scans with sampling time scales ranging from seconds to minutes. First, staring mode measurements were...... compared to hot wire probe measurements commonly used in wind tunnels. This yielded goodness of fit coefficients of 0.969 and 0.902 for the 1 Hz averaged u- and v-components of the wind speed, respectively, validating the 2D measurement capability of the Lidar scanners. Subsequently, the measurement...

  17. A high-stability scanning tunneling microscope achieved by an isolated tiny scanner with low voltage imaging capability

    Science.gov (United States)

    Wang, Qi; Hou, Yubin; Wang, Junting; Lu, Qingyou

    2013-11-01

    We present a novel homebuilt scanning tunneling microscope (STM) with high quality atomic resolution. It is equipped with a small but powerful GeckoDrive piezoelectric motor which drives a miniature and detachable scanning part to implement coarse approach. The scanning part is a tiny piezoelectric tube scanner (industry type: PZT-8, whose d31 coefficient is one of the lowest) housed in a slightly bigger polished sapphire tube, which is riding on and spring clamped against the knife edges of a tungsten slot. The STM so constructed shows low back-lashing and drifting and high repeatability and immunity to external vibrations. These are confirmed by its low imaging voltages, low distortions in the spiral scanned images, and high atomic resolution quality even when the STM is placed on the ground of the fifth floor without any external or internal vibration isolation devices.

  18. A high-stability scanning tunneling microscope achieved by an isolated tiny scanner with low voltage imaging capability

    International Nuclear Information System (INIS)

    Wang, Qi; Wang, Junting; Lu, Qingyou; Hou, Yubin

    2013-01-01

    We present a novel homebuilt scanning tunneling microscope (STM) with high quality atomic resolution. It is equipped with a small but powerful GeckoDrive piezoelectric motor which drives a miniature and detachable scanning part to implement coarse approach. The scanning part is a tiny piezoelectric tube scanner (industry type: PZT-8, whose d 31 coefficient is one of the lowest) housed in a slightly bigger polished sapphire tube, which is riding on and spring clamped against the knife edges of a tungsten slot. The STM so constructed shows low back-lashing and drifting and high repeatability and immunity to external vibrations. These are confirmed by its low imaging voltages, low distortions in the spiral scanned images, and high atomic resolution quality even when the STM is placed on the ground of the fifth floor without any external or internal vibration isolation devices

  19. A cryostat to hold frozen-spin polarized HD targets in CLAS: HDice-II

    International Nuclear Information System (INIS)

    The design, fabrication, operation, and performance of a 3/4 He dilution refrigerator and superconducting magnet system for holding a frozen-spin polarized hydrogen deuteride target in the Jefferson Laboratory CLAS detector during photon beam running is reported. The device operates both vertically (for target loading) and horizontally (for target bombardment). The device proves capable of maintaining a base temperature of 50 mK and a holding field of 1 T for extended periods. These characteristics enabled multi-month polarization lifetimes for frozen spin HD targets having proton polarization of up to 50% and deuteron up to 27%.

  20. A cryostat to hold frozen-spin polarized HD targets in CLAS: HDice-II

    Energy Technology Data Exchange (ETDEWEB)

    Lowry, M.M., E-mail: mlowry@jlab.org [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Bass, C.D. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); D' Angelo, A. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Universita' di Roma ‘Tor Vergata’, and INFN Sezione di Roma ‘Tor Vergata’, Via della Ricerca Scientifica, 1, I-00133 Roma (Italy); Deur, A.; Dezern, G. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Hanretty, C. [University of Virginia, 1400 University Avenue, Charlottesville, VA 22903 (United States); Ho, D. [Carnegie-Mellon University, 5000 Forbes Avenue, Pittsburgh, PA 15213 (United States); Kageya, T.; Kashy, D. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Khandaker, M. [Norfolk State University, 700 Park Avenue, Norfolk, VA 23504 (United States); Laine, V. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Université Blaise Pascal, 34 Avenue Carnot, 63000 Clermont-Ferrand (France); O' Connell, T. [University of Connecticut, 115 N Eagleville Road, Storrs-Mansfield, CT 06269 (United States); Pastor, O. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Peng, P. [University of Virginia, 1400 University Avenue, Charlottesville, VA 22903 (United States); Sandorfi, A.M. [Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Sokhan, D. [Institut de Physique Nucleaire, Bat 100 – M053, Orsay 91406 (France); and others

    2016-04-11

    The design, fabrication, operation, and performance of a {sup 3/4}He dilution refrigerator and superconducting magnet system for holding a frozen-spin polarized hydrogen deuteride target in the Jefferson Laboratory CLAS detector during photon beam running is reported. The device operates both vertically (for target loading) and horizontally (for target bombardment). The device proves capable of maintaining a base temperature of 50 mK and a holding field of 1 T for extended periods. These characteristics enabled multi-month polarization lifetimes for frozen spin HD targets having proton polarization of up to 50% and deuteron up to 27%.

  1. Low energy spin polarized radioactive beams as a probe of thin films and interfaces

    CERN Document Server

    Kiefl, R F; Amaudruz, P A; Arseneau, D; Baartman, R; Beals, T R; Behr, J; Brewer, J; Daviel, S; Hatakeyama, A; Hitti, B; Kreitzman, S R; Levy, C D P; Miller, R; Olivo, M; Poutissou, R; Morris, G D; Dunsiger, S R; Heffner, R; Chow, K H; Hirayama, Y; Izumi, H; Bommas, C; Dumont, E; Greene, L H

    2003-01-01

    A spectrometer for beta-detected nuclear magnetic resonance (beta-NMR) has been commissioned at the ISAC facility at TRIUMF. A beam of low energy highly spin polarized sup 8 Li sup + can be decelerated and implanted into ultra-thin structures 6-400 nm thick. beta-NMR provides local information on the electronic and magnetic properties of materials which is similar to conventional NMR but can be used as a sensitive probe of ultra-thin films, interfaces and other nanostructures. We report here on the status of the spectrometer and preliminary results on a simple metal film.

  2. Observation of nuclear spin waves in spin-polarized atomic hydrogen gas

    Energy Technology Data Exchange (ETDEWEB)

    Johson, B.R.; Denker, J.S.; Bigelow, N.; Levy, L.P.; Freed, J.H.; Lee, D.M.

    1984-04-23

    We have observed narrow, distinct resonances in the NMR spectrum of dilute spin-polarized atomic hydrogen gas (nroughly-equal10/sup 16/ atoms/cm/sup 3/). The dependence of the observed spectra on temperature, density, polarization, and magnetic field gradient is consistent with theoretical predictions for spin-wave excitations damped by diffusion. We have measured the parameter ..mu.., which is a measure of the importance of exchange effects in spin transport processes, and the diffusion coefficient D/sub 0/, both of which are in reasonable agreement with theory.

  3. Visualization of postoperative anterior cruciate ligament reconstruction bone tunnels: Reliability of standard radiographs, CT scans, and 3D virtual reality images

    NARCIS (Netherlands)

    D.E. Meuffels (Duncan); J.W. Potters (Jan Willem); A.H.J. Koning (Anton); C.H. Brown Jr Jr. (Charles); J.A.N. Verhaar (Jan); M. Reijman (Max)

    2011-01-01

    textabstractBackground and purpose: Non-anatomic bone tunnel placement is the most common cause of a failed ACL reconstruction. Accurate and reproducible methods to visualize and document bone tunnel placement are therefore important. We evaluated the reliability of standard radiographs, CT scans,

  4. Simulations of Resonant Intraband and Interband Tunneling Spin Filters

    Science.gov (United States)

    Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

    2001-01-01

    This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

  5. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  6. Demonstration and uncertainty analysis of synchronised scanning lidar measurements of 2D velocity fields in a boundary-layer wind tunnel

    OpenAIRE

    Dooren, Marijn F.; Campagnolo, Filippo; Sjöholm, Mikael; Angelou, Nikolas; Mikkelsen, Torben; Kühn, Martin

    2017-01-01

    This paper combines the research methodologies of scaled wind turbine model experiments in wind tunnels with short-range WindScanner lidar measurement technology. The wind tunnel at the Politecnico di Milano was equipped with three wind turbine models and two short-range WindScanner lidars to demonstrate the benefits of synchronised scanning lidars in such experimental surroundings for the first time. The dual-lidar system can provide fully synchronised trajectory scans with sampling timescal...

  7. Simultaneous production of spin-polarized ions/electrons based on two-photon ionization of laser-ablated metallic atoms

    International Nuclear Information System (INIS)

    Nakajima, Takashi; Yonekura, Nobuaki; Matsuo, Yukari; Kobayashi, Tohru; Fukuyama, Yoshimitsu

    2003-01-01

    We demonstrate the simultaneous production of spin-polarized ions/electrons using two-color, two-photon ionization of laser-ablated metallic atoms. Specifically, we have applied the developed technique to laser-ablated Sr atoms, and found that the electron-spin polarization of Sr + ions, and accordingly, the spin polarization of photoelectrons is 64%±9%, which is in good agreement with the theoretical prediction we have recently reported [T. Nakajima and N. Yonekura, J. Chem. Phys. 117, 2112 (2002)]. Our experimental results open up a simple way toward the construction of a spin-polarized dual ion/electron source

  8. Multispin-assisted optical pumping of bulk 13C nuclear spin polarization in diamond

    Science.gov (United States)

    Pagliero, Daniela; Rao, K. R. Koteswara; Zangara, Pablo R.; Dhomkar, Siddharth; Wong, Henry H.; Abril, Andrea; Aslam, Nabeel; Parker, Anna; King, Jonathan; Avalos, Claudia E.; Ajoy, Ashok; Wrachtrup, Joerg; Pines, Alexander; Meriles, Carlos A.

    2018-01-01

    One of the most remarkable properties of the nitrogen-vacancy (NV) center in diamond is that optical illumination initializes its electronic spin almost completely, a feature that can be exploited to polarize other spin species in their proximity. Here we use field-cycled nuclear magnetic resonance to investigate the mechanisms of spin-polarization transfer from NVs to 13C spins in diamond at room temperature. We focus on the dynamics near 51 mT, where a fortuitous combination of energy-matching conditions between electron and nuclear spin levels gives rise to alternative polarization transfer channels. By monitoring the 13C spin polarization as a function of the applied magnetic field, we show 13C spin pumping takes place via a multispin cross-relaxation process involving the N V- spin and the electronic and nuclear spins of neighboring P1 centers. Further, we find that this mechanism is insensitive to the crystal orientation relative to the magnetic field, although the absolute level of 13C polarization—reaching up to ˜3 % under optimal conditions—can vary substantially depending on the interplay between optical pumping efficiency, photogenerated carriers, and laser-induced heating.

  9. Spin-polarized radioactive isotope beam produced by tilted-foil technique

    International Nuclear Information System (INIS)

    Hirayama, Yoshikazu; Mihara, Mototsugu; Watanabe, Yutaka; Jeong, Sun-Chan; Miyatake, Hiroari; Momota, Sadao; Hashimoto, Takashi; Imai, Nobuaki; Matsuta, Kensaku; Ishiyama, Hironobu; Ichikawa, Shin-ichi; Ishii, Tetsuro; Izumikawa, Takuji; Katayama, Ichiro; Kawakami, Hirokane; Kawamura, Hirokazu; Nishinaka, Ichiro; Nishio, Katsuhisa; Makii, Hiroyuki; Mitsuoka, Shin-ichi

    2013-01-01

    Highlights: • Detail study for tilted foil technique. • New equation for estimating nuclear polarization dependence on the beam energy. • Production of nuclear polarization for heaviest nucleus 123 In in ground state. -- Abstract: The tilted-foil method for producing spin-polarized radioactive isotope beams has been studied using the re-accelerated radioactive 8 Li and 123 In beams produced at Tokai Radioactive Ion Accelerator Complex (TRIAC) facility. We successfully produced polarization in a 8 Li beam of 7.3(5)% using thin polystyrene foils (4.2 μg/cm 2 ). The systematic study of the nuclear polarization as a function of the number of foils and beam energy has been performed, confirming the features of the tilted-foil technique experimentally. After the study, a spin-polarized radioactive 123 In beam, which is the heaviest ever polarized in its ground state by this method, has been successfully generated by the tilted-foil method, for the nuclear spectroscopy around the doubly magic nucleus 132 Sn

  10. Generalized nuclear Fukui functions in the framework of spin-polarized density-functional theory

    International Nuclear Information System (INIS)

    Chamorro, E.; Proft, F. de; Geerlings, P.

    2005-01-01

    An extension of Cohen's nuclear Fukui function is presented in the spin-polarized framework of density-functional theory (SP-DFT). The resulting new nuclear Fukui function indices Φ Nα and Φ Sα are intended to be the natural descriptors for the responses of the nuclei to changes involving charge transfer at constant multiplicity and also the spin polarization at constant number of electrons. These generalized quantities allow us to gain new insights within a perturbative scheme based on DFT. Calculations of the electronic and nuclear SP-DFT quantities are presented within a Kohn-Sham framework of chemical reactivity for a sample of molecules, including H 2 O, H 2 CO, and some simple nitrenes (NX) and phosphinidenes (PX), with X=H, Li, F, Cl, OH, SH, NH 2 , and PH 2 . Results have been interpreted in terms of chemical bonding in the context of Berlin's theorem, which provides a separation of the molecular space into binding and antibinding regions

  11. Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer

    Science.gov (United States)

    Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

    2017-04-01

    Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM.

  12. Construction and characterization of a spin polarized helium ion beam for surface electronic structure studies

    International Nuclear Information System (INIS)

    Harrison, A.R.

    1982-01-01

    Ion neutralization and metastable de-excitation spectroscopy, INS and MDS, allow detailed analysis of the surface electronic configuration of metals. The orthodox application of these spectroscopies may be enhanced by electronic spin polarization of the probe beams. For this reason, a spin polarized helium ion beam has been constructed. The electronic spin of helium metastables created within an rf discharge may be spacially aligned by optically pumping the atoms. Subsequent collisions between metastables produce helium ions which retain the orientation of the electronic spin. Extracted ion polarization, although not directly measurable, may be estimated from extracted electron polarization, metastable polarization, pumping radiation absorption and current modulation measurements. Ions extracted from the optically pumped discharge exhibit an estimated polarization of about ten per cent at a beam current of a few tenths of a microampere. Extraction of helium ions from the discharge requires that the ions have a high kinetic energy. However, to avoid undesirable kinetic electron ejection from the target surface, the ions must be decelerated. Examination of various deceleration configurations, in paticular exponential and linear deceleration fields, and experimental observation indicate that a linear decelerating field produces the best low energy beam to the target surface

  13. Tunable spin-polarized edge transport in inverted quantum-well junctions

    Science.gov (United States)

    Nanclares, Dimy; Lima, Leandro R. F.; Lewenkopf, Caio H.; da Silva, Luis G. G. V. Dias

    2017-10-01

    Inverted HgTe/CdTe quantum wells have been used as a platform for the realization of two-dimensional topological insulators, bulk insulator materials with spin-helical metallic edge states protected by time-reversal symmetry. This paper investigates the spectrum and the charge transport in HgTe/CdTe quantum well junctions both in the topological regime and in the absence of time-reversal symmetry. We model the system using the Bernevig-Hughes-Zhang effective Hamiltonian and compute the transport properties using recursive Green's functions with a finite differences' method. Specifically, we have studied the material's spatially resolved conductance in a setup with a gated central region, forming monopolar (n -n'-n ) and heteropolar (n -p -n , n -TI-n ) double junctions, which have been recently realized in experiments. We find regimes in which the edge states carry spin-polarized currents in the central region even in the presence of a small magnetic field, which breaks time-reversal symmetry. More interestingly, the conductance displays spin-dependent, Fabry-Perót-like oscillations as a function of the central gate voltage producing tunable, fully spin-polarized currents through the device.

  14. Magnetic adatoms in two and four terminal graphene nanoribbons: A comparison between their spin polarized transport

    Science.gov (United States)

    Ganguly, Sudin; Basu, Saurabh

    2018-04-01

    We study the charge and spin transport in two and four terminal graphene nanoribbons (GNR) decorated with random distribution of magnetic adatoms. The inclusion of the magnetic adatoms generates only the z-component of the spin polarized conductance via an exchange bias in the absence of Rashba spin-orbit interaction (SOI), while in presence of Rashba SOI, one is able to create all the three (x, y and z) components. This has important consequences for possible spintronic applications. The charge conductance shows interesting behaviour near the zero of the Fermi energy. Where in presence of magnetic adatoms the familiar plateau at 2e2 / h vanishes, thereby transforming a quantum spin Hall insulating phase to an ordinary insulator. The local charge current and the local spin current provide an intuitive idea on the conductance features of the system. We found that, the local charge current is independent of Rashba SOI, while the three components of the local spin currents are sensitive to Rashba SOI. Moreover the fluctuations of the spin polarized conductance are found to be useful quantities as they show specific trends, that is, they enhance with increasing adatom densities. A two terminal GNR device seems to be better suited for possible spintronic applications.

  15. Stability of superfluid phases in the 2D spin-polarized attractive Hubbard model

    Science.gov (United States)

    Kujawa-Cichy, A.; Micnas, R.

    2011-08-01

    We study the evolution from the weak coupling (BCS-like limit) to the strong coupling limit of tightly bound local pairs (LPs) with increasing attraction, in the presence of the Zeeman magnetic field (h) for d=2, within the spin-polarized attractive Hubbard model. The broken symmetry Hartree approximation as well as the strong coupling expansion are used. We also apply the Kosterlitz-Thouless (KT) scenario to determine the phase coherence temperatures. For spin-independent hopping integrals (t↑=t↓), we find no stable homogeneous polarized superfluid (SCM) state in the ground state for the strong attraction and obtain that for a two-component Fermi system on a 2D lattice with population imbalance, phase separation (PS) is favoured for a fixed particle concentration, even on the LP (BEC) side. We also examine the influence of spin-dependent hopping integrals (mass imbalance) on the stability of the SCM phase. We find a topological quantum phase transition (Lifshitz type) from the unpolarized superfluid phase (SC0) to SCM and tricritical points in the h-|U| and t↑/t↓-|U| ground-state phase diagrams. We also construct the finite temperature phase diagrams for both t↑=t↓ and t↑≠t↓ and analyze the possibility of occurrence of a spin-polarized KT superfluid.

  16. Surface Morphology and Overlayer Formation Kinetics of OXYGEN/SILVER(110) Studied by Scanning Tunneling Microscopy

    Science.gov (United States)

    Pai, Woei Wu.

    1995-01-01

    I have applied scanning tunneling microscopy (STM) to study clean and oxygen-covered vicinal Ag(110) surfaces at room temperature. Experimental results of surface morphology/stability, surface mass transport and surface chemical reactivity are presented. On clean vicinal Ag(110) surfaces, the steps distribute under the influence of step-step interactions. The terrace width distributions indicate an additional oscillatory component besides an l^{-2} interaction term. If the surface is contaminated slightly (quasi-clean), isolated "pinning sites" impede the motion of steps. The interactions between steps push the steps across the pinning site, resulting in a curved step front. When oxygen atoms adsorb on stepped Ag(110), a dramatic change in surface morphology occurs. The surface separates into two distinct phases--step bunches and large terraces (facets). The orientational instability is closely related to the linear "added-row" structure of the oxygen overlayer, as the long O chains push steps into bunches. The O chains do not push the steps effectively when O chains orient perpendicular to steps, and the faceting proceeds through nucleation. If the O chains orient near parallel to steps, however, O chains push the steps easily and the faceting proceeds through spinodal decomposition. To understand the mass transport during faceting, I quantify the thermal step fluctuations by employing a Langevin statistical analysis. The mass transport mechanism at the step edge is shown to be by atomic exchange between steps and terraces, making the step an effective source or sink for Ag adatoms. This Ag source also proves essential in O overlayer formation, since both Ag and O atoms are incorporated into the "added -row" overlayer structure. Because an Ag source must be found during the adlayer formation, I show the surface morphology is sensitive to oxygen dosing pressure. Above a critical O pressure of 10^{-5} mbar, vacancy islands on terraces provide a second source of Ag

  17. A Scanning Tunneling Microscope at the Milli-Kelvin, High Magnetic Field Frontier

    Science.gov (United States)

    Zhou, Brian B.

    The ability to access lower temperatures and higher magnetic fields has precipitated breakthroughs in our understanding of physical matter, revealing novel effects such as superconductivity, the integer and fractional quantum Hall effects, and single spin magnetism. Extending the scanning tunneling microscope (STM) to the extremity of the B-T phase space provides unique insight on these phenomena both at the atomic level and with spectroscopic power. In this thesis, I describe the design and operation of a full-featured, dilution refrigerator-based STM capable of sample preparation in ultra-high vacuum (UHV) and spectroscopic mapping with an electronic temperature of 240 mK in fields up to 14 T. I detail technical solutions to overcome the stringent requirements on vibration isolation, electronic noise, and mechanical design necessary to successfully integrate the triad of the STM, UHV, and dilution refrigeration. Measurements of the heavy fermion superconductor CeCoIn5 ( Tc = 2.3 K) directly leverage the resulting combination of ultra-low temperature and atomic resolution to identify its Cooper pairing to be of dx2-y2 symmetry. Spectroscopic and quasiparticle interference measurements isolate a Kondo-hybridized, heavy effective mass band near the Fermi level, from which nodal superconductivity emerges in CeCoIn5 in coexistence with an independent pseudogap. Secondly, the versatility of this instrument is demonstrated through measurements of the three-dimensional Dirac semimetal Cd3As2 up to the maximum magnetic field. Through high resolution Landau level spectroscopy, the dispersion of the conduction band is shown to be Dirac-like over an unexpectedly extended regime, and its two-fold degeneracy to be lifted in field through a combination of orbital and Zeeman effects. Indeed, these two experiments on CeCoIn5 and Cd3 As2 glimpse the new era of nano-scale materials research, spanning superconductivity, topological properties, and single spin phenomena, made

  18. Scanning Tunneling Microscopy Applied to the Electrochemical Deposition of Lead on the GOLD(111) Surface.

    Science.gov (United States)

    Green, Michael Philip

    1990-01-01

    A scanning tunneling microscope (STM) was developed and used to study the atomic scale structure of two types of metal surfaces. Operating both in air and through an electrolytic bath, the STM was used to investigate electrochemical deposition on the gold(111) surface. For the study in air, images were taken of both uncoated gold(111) films and those with monolayer and submonolayer deposits of lead and copper, prepared by underpotential deposition (UPD). Comparison between STM images of the bare gold substrates and those with the UPD adlayers reveals no difference. Oxidation of the UPD films is blamed for rendering the overlayers invisible to the STM. The common surface structure of these samples in air is discussed. Dominant features include: planar regions or terraces separated by monoatomic steps; monolayer deep pits; and monolayer high platforms. Room temperature surface diffusion has been monitored and can be seen to produce an overall smoothing of the topography. A second type of diffusion, more rapid and less common, produces finger-like ridges which are related to the gold(111) 1 x 23 reconstruction. In-situ experiments involved real-time STM monitoring of the surface topography during the electrochemical deposition and subsequent removal of a UPD lead monolayer. For the deposition process, step edges show the earliest and most extensive activity; however, nucleation of small lead islands on apparently flat terraces also provides growth sites. The lead coated surfaces are found to be smoother than the underlying gold. Subsequent removal of the UPD overlayer proceeds from the dissolution of lead platforms to the formation and expansion of a network of pits in the adlayer. The topography of the gold substrate is altered by the deposition/stripping process. Design of the STM and Modifications necessary to operate in an electrochemical environment are discussed. The STM has also been used in air to investigate the surface topography of x-ray reflecting optics

  19. Improved Electron Yield and Spin-Polarization from III-V Photocathodes via Bias Enhanced Carrier Drift: Final Report

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.

    2006-01-01

    In this DOE STTR program, Saxet Surface Science, with the Stanford Linear Accelerator Center as partner, designed, built and tested photocathode structures such that optimal drift-enhanced spin-polarization from GaAs based photoemitters was achieved with minimal bias supply requirements. The forward bias surface grid composition was optimized for maximum polarization and yield, together with other construction parameters including doping profile. This program has culminated in a cathode bias structure affording increased electron spin polarization when applied to III-V based photocathodes. The optimized bias structure has been incorporated into a cathode mounting and biasing design for use in a polarized electron gun.

  20. Scanning tunneling microscopy-based in situ measurement of fast tool servo-assisted diamond turning micro-structures

    International Nuclear Information System (INIS)

    Ju, Bing-Feng; Zhu, Wu-Le; Yang, Shunyao; Yang, Keji

    2014-01-01

    We propose a new in situ measurement system based on scanning tunneling microscopy (STM) to realize spiral scanning of a micro-structure without removing it after fast tool servo (FTS) cutting. To avoid distortion of the machined and measured surface, the center alignment of the FTS tool and the STM tip was first implemented by an STM in situ raster scan of two circular grooves cut by the machine tool. To originally observe the machined surface, the trace of the STM tip is put in accord with that of the FTS by setting the same start and end points of cutting and scanning and the same feed rate, and both are triggered by the subdivided rotary encoder of the spindle of the diamond turning machine. The profile data of the in situ spiral scanning of the machined micro-lens array can be fed back to compensate the depth of the cut to guarantee sub-micron form accuracy after second machining. The efficient spiral scanning, proper matching and accurate evaluation results demonstrate that the proposed STM in situ measurement approach is of great significance to the fabrication process. (paper)

  1. Scanning tunneling spectroscopy on the chalcopyrite solar cell absorber material Cu(In,Ga)Se{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Moenig, Harry; Saez-Araoz, Rodrigo; Lux-Steiner, Martha [Freie Universitaet Berlin (Germany); Sadewasser, Sascha; Ennaoui, Ahmed; Kaufmann, Christian; Kropp, Timo; Lauermann, Iver; Muenchenberg, Tim; Schock, Hans-Werner; Streicher, Ferdinand [Hahn- Meitner-Institut Berlin (Germany)

    2007-07-01

    Cu(In,Ga)Se{sub 2}-based thin film solar cells have reached efficiencies close to 20%. Nevertheless, little is known about electronic transport and carrier recombination in this material on a microscopic scale. Especially grain boundaries in these polycrystalline materials are considered to play an important role in the performance of these solar cells. We applied scanning tunneling microscopy and spectroscopy to gain more insight in the electronic microstructure of the material. Our results point to lateral electronic inhomogeneities on the absorber surface and to an enhanced density of states at grain boundaries. The influence of charging effects is discussed.

  2. Analysis of photon-scanning tunneling microscope images of inhomogeneous samples: Determination of the local refractive index of channel waveguides

    International Nuclear Information System (INIS)

    Bourillot, E.; Fornel, F. de.; Goudonnet, J.P.

    1995-01-01

    Channel waveguides are imaged by a photon-scanning tunneling microscope (PSTM). The polarization of the light and its orientation with respect to the guide aids are shown to be very important parameters in the analysis of the images of such samples. We simulated image formation for the plane of incidence parallel to the axis of the guide. Our theoretical results are qualitatively in agreement with our measurements. These results show the ability of the PSTM to give information about the local refractive-index variations of a sample. 21 refs., 14 figs

  3. Adsorption of human insulin on single-crystal gold surfaces investigated by in situ scanning tunnelling microscopy and electrochemistry

    DEFF Research Database (Denmark)

    Welinder, Anna Christina; Zhang, Jingdong; Steensgaard, D.B.

    2010-01-01

    We have explored the adsorption of zinc-free human insulin on the three low-index single-crystalline Au(111)-, Au(100)- and Au(110)-surfaces in aqueous buffer (KH2PO4, pH 5) by a combination of electrochemical scanning tunnelling microscopy (in situ STM) at single-molecule resolution and linear...... sweep, LSV, cyclic, CV, and square wave (SQWV) voltammetry. Multifarious electrochemical patterns were observed. Most attention was given to reductive desorption caused by insulin binding to the Au-surfaces via up to three disulfide groups per insulin monomer, presumably converted to single Au-S links...

  4. Scanning Tunneling Microscopy Measurements of the Full Cycle of a Heterogeneous Asymmetric Hydrogenation Reaction on Chirally Modified Pt(111)

    DEFF Research Database (Denmark)

    Demers-Carpentier, Vincent; Goubert, Guillaume; Masini, Federico

    2012-01-01

    The hydrogenation of a prochiral substrate, 2,2,2-trifluoroacetophenone (TFAP), on Pt(111) was studied using room-temperature scanning tunneling microscopy (STM) measurements. The experiments were carried out both on a clean surface and on a chirally modified surface, using chemisorbed (R)-(+)-1...... protrusion compared to TFAP in dimer structures. They are attributed to a half-hydrogenated intermediate. The introduction of H2 to a mixture of (R)-NEA and TFAP on Pt(111) leads to the removal of TFAP without any change in the population of the modifier, as required for an efficient chirally modified...

  5. Characterization of Si3N4/SiO2 optical channel waveguides by photon scanning tunneling microscopy

    Science.gov (United States)

    Wang, Yan; Chudgar, Mona H.; Jackson, Howard E.; Miller, Jeffrey S.; De Brabander, Gregory N.; Boyd, Joseph T.

    1993-01-01

    Photon scanning tunneling microscopy (PSTM) is used to characterize Si3N4/Si02 optical channel waveguides being used for integrated optical-micromechanical sensors. PSTM utilizes an optical fiber tapered to a fine point which is piezoelectrically positioned to measure the decay of the evanescent field intensity associated with the waveguide propagating mode. Evanescent field decays are recorded for both ridge channel waveguides and planar waveguide regions. Values for the local effective refractive index are calculated from the data for both polarizations and compared to model calculations.

  6. Surface damage through grazing incidence ions investigated by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Redinger, Alex

    2009-07-10

    Surface damage, caused by grazing incidence ions, is investigated with variable temperature scanning tunneling microscopy. The experiments are carried out on a Pt(111) crystal. The kinetic energy of noble gas ions is varied between 1-15 keV and the angle of incidence can be adjusted between {theta} = 78.5 and {theta} = 90 measured with respect to the surface normal. The damage patterns of single ion impacts, on flat terraces and at step edges of monoatomic height, are investigated at low surface temperatures. Ions hitting a flat terrace are usually specular reflected. The energy transfer from the ion to the crystal atoms is small and only little damage is produced. In contrast, at ascending step edges, which are illuminated by the ion beam, large angle scattering events occur. Sputtering, adatom and vacancy production is induced. However, a significant fraction of the ions, which hit step edges, enter the crystal and are guided in between two atomic layers parallel to the surface via small angle binary collisions. This steering process is denoted as subsurface channeling. The energy loss per length scale of the channeled particles is low, which results in long ion trajectories (up to 1000A). During the steering process, the ions produce surface damage. Depending on the ion species and the ion energy, adatom and vacancies or surface vacancy trenches of monoatomic width are observed. The surface damage can be used to track the path of the ion. This makes the whole trajectory of single ions with keV energy visible. The number of sputtered atoms per incident ion at ascending step edges, i.e. the step edge sputtering yield, is measured experimentally for different irradiation conditions. For {theta} = 86 , the sputtering yield is determined from the fluence dependent retraction of pre-existing illuminated step edges. An alternative method for the step edge sputtering yield determination, is the analysis of the concentration of ascending steps and of the removed amount

  7. Surface damage through grazing incidence ions investigated by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Redinger, Alex

    2009-01-01

    Surface damage, caused by grazing incidence ions, is investigated with variable temperature scanning tunneling microscopy. The experiments are carried out on a Pt(111) crystal. The kinetic energy of noble gas ions is varied between 1-15 keV and the angle of incidence can be adjusted between θ = 78.5 and θ = 90 measured with respect to the surface normal. The damage patterns of single ion impacts, on flat terraces and at step edges of monoatomic height, are investigated at low surface temperatures. Ions hitting a flat terrace are usually specular reflected. The energy transfer from the ion to the crystal atoms is small and only little damage is produced. In contrast, at ascending step edges, which are illuminated by the ion beam, large angle scattering events occur. Sputtering, adatom and vacancy production is induced. However, a significant fraction of the ions, which hit step edges, enter the crystal and are guided in between two atomic layers parallel to the surface via small angle binary collisions. This steering process is denoted as subsurface channeling. The energy loss per length scale of the channeled particles is low, which results in long ion trajectories (up to 1000A). During the steering process, the ions produce surface damage. Depending on the ion species and the ion energy, adatom and vacancies or surface vacancy trenches of monoatomic width are observed. The surface damage can be used to track the path of the ion. This makes the whole trajectory of single ions with keV energy visible. The number of sputtered atoms per incident ion at ascending step edges, i.e. the step edge sputtering yield, is measured experimentally for different irradiation conditions. For θ = 86 , the sputtering yield is determined from the fluence dependent retraction of pre-existing illuminated step edges. An alternative method for the step edge sputtering yield determination, is the analysis of the concentration of ascending steps and of the removed amount of material as a

  8. Adsorbate structures and catalytic reactions studied in the torrpressure range by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Kevin Shao-Lin [Univ. of California, Berkeley, CA (United States)

    2003-01-01

    High-pressure, high-temperature scanning tunneling microscopy (HPHTSTM) was used to study adsorbate structures and reactions on single crystal model catalytic systems. Studies of the automobile catalytic converter reaction [CO + NO → 1/2 N2 + CO2] on Rh(111) and ethylene hydrogenation [C2H4 + H2 → C2H6] on Rh(111) and Pt(111) elucidated information on adsorbate structures in equilibrium with high-pressure gas and the relationship of atomic and molecular mobility to chemistry. STM studies of NO on Rh(111) showed that adsorbed NO forms two high-pressure structures, with the phase transformation from the (2 x 2) structure to the (3 x 3) structure occurring at 0.03 Torr. The (3 x 3) structure only exists when the surface is in equilibrium with the gas phase. The heat of adsorption of this new structure was determined by measuring the pressures and temperatures at which both (2 x 2) and (3 x 3) structures coexisted. The energy barrier between the two structures was calculated by observing the time necessary for the phase transformation to take place. High-pressure STM studies of the coadsorption of CO and NO on Rh(111) showed that CO and NO form a mixed (2 x 2) structure at low NO partial pressures. By comparing surface and gas compositions, the adsorption energy difference between topsite CO and NO was calculated. Occasionally there is exchange between top-site CO and NO, for which we have described a mechanism for. At high NO partial pressures, NO segregates into islands, where the phase transformation to the (3 x 3) structure occurs. The reaction of CO and NO on Rh(111) was monitored by mass spectrometry (MS) and HPHTSTM. From MS studies the apparent activation energy of the catalytic converter reaction was calculated and compared to theory. STM showed that under high-temperature reaction conditions, surface metal atoms become mobile. Ethylene hydrogenation and its poisoning by CO was

  9. Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

    OpenAIRE

    Saffarzadeh, Alireza; Daqiq, Reza

    2009-01-01

    We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to t...

  10. Spin-polarized x-ray emission of 3d transition-metal ions : A comparison via K alpha and K beta detection

    NARCIS (Netherlands)

    Wang, Xin; deGroot, F.M.F.; Cramer, SP

    1997-01-01

    This paper demonstrates that spin-polarized x-ray-excitation spectra can be obtained using K alpha emission as well as K beta lines. A spin-polarized analysis of K alpha x-ray emission and the excitation spectra by K alpha detection on a Ni compound is reported. A systematic analysis of the

  11. Reconstruction of mono-vacancies in carbon nanotubes: Atomic relaxation vs. spin polarization

    International Nuclear Information System (INIS)

    Berber, S.; Oshiyama, A.

    2006-01-01

    We have investigated the reconstruction of mono-vacancies in carbon nanotubes using density functional theory (DFT) geometry optimization and electronic structure calculations, employing a numerical basis set. We considered mono-vacancies in achiral nanotubes with diameter range ∼4-9A. Contrary to previous tight-binding calculations, our results indicate that mono-vacancies could have several metastable geometries, confirming the previous plane-wave DFT results. Formation energy of mono-vacancies is 4.5-5.5eV, increasing with increasing tube diameter. Net magnetic moment decreases from ideal mono-vacancy value after reconstruction, reflecting the reduction of the number of dangling bonds. In spite of the existence of a dangling bond, ground state of mono-vacancies in semiconducting tubes have no spin polarization. Metallic carbon nanotubes show net magnetic moment for most stable structure of mono-vacancy, except for very small diameter tubes

  12. Spin polarized solid target as a prospective tool for radioactive ion beam physics

    Science.gov (United States)

    Urrego-Blanco, J. P.; van den Brandt, B.; Bunyatova, E. I.; Galindo-Uribarri, A.; Hautle, P.; Konter, J. A.

    2005-12-01

    Spin polarized probes are used in a wide range of experiments in nuclear physics including the determination of spin structure functions and tests of fundamental symmetries. At low energies, light stable polarized beams have been used for spectroscopic purposes. We propose to extend these types of experiments to nuclei far from stability by using radioactive ion beams (RIBs) and polarized targets. Towards this goal we intend to develop a solid polarized proton and/or deuterium target in the thickness range between 20 μm and 100 μm based on a scintillating (active) polymeric foil. Such a target would be a useful tool in the determination of excitation functions in resonant reactions, in studies of one-nucleon transfer reactions using RIBs as well as in probing the matter density of atomic nuclei. If scintillating, it could also help remove the background associated with the scattering of the radioactive beam.

  13. Spin polarized solid target as a prospective tool for radioactive ion beam physics

    Energy Technology Data Exchange (ETDEWEB)

    Urrego-Blanco, J.P. [Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996 (United States); Physics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6371 (United States); Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Brandt, B. van den [Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Bunyatova, E.I. [Joint Institute for Nuclear Research, Dubna, Head P.O. Box 79, 101000 Moscow (Russian Federation); Galindo-Uribarri, A. [Physics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831-6371 (United States)]. E-mail: uribarri@mail.phy.ornl.gov; Hautle, P. [Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland); Konter, J.A. [Paul Scherrer Institute, CH-5232 Villigen PSI (Switzerland)

    2005-12-15

    Spin polarized probes are used in a wide range of experiments in nuclear physics including the determination of spin structure functions and tests of fundamental symmetries. At low energies, light stable polarized beams have been used for spectroscopic purposes. We propose to extend these types of experiments to nuclei far from stability by using radioactive ion beams (RIBs) and polarized targets. Towards this goal we intend to develop a solid polarized proton and/or deuterium target in the thickness range between 20 {mu}m and 100 {mu}m based on a scintillating (active) polymeric foil. Such a target would be a useful tool in the determination of excitation functions in resonant reactions, in studies of one-nucleon transfer reactions using RIBs as well as in probing the matter density of atomic nuclei. If scintillating, it could also help remove the background associated with the scattering of the radioactive beam.

  14. Observation of radiative spin-polarization at 60.6 GeV

    CERN Document Server

    Assmann, R W; Hildreth, M D; Matheson, J; Mugnai, G; Placidi, Massimo; Roncarolo, F; Torrence, E; Sonnemann, F; Uythoven, J; Wenninger, J; Blondel, A

    1999-01-01

    Radiative spin-polarization has been used extensively at LEP to accurately measure the beam energy around the Z resonance. As the LEP physics has moved on to the W boson the calibration based on polarization must be extended towards higher beam energies. This is difficult as the depolarizing effects of spin resonances grow rapidly with beam energy. At LEP it has been possible for the first time to measure transverse beam polarization at 60.6 GeV. To allow a build-up of polarization the tunes and the energy were chosen accurately. A low phase advance optics was used and careful orbit correction was carried out using dynamic beam based alignment data. Harmonic spin matching was applied both in a deterministic and a novel semi- empirical way. (11 refs).

  15. Confinement effect on spin-polarized edge states in graphene nanostructures

    Science.gov (United States)

    Ramos-Castillo, Carlos; de Coss, Romeo

    2014-03-01

    One of the most intriguing phenomena in condensed matter physics is the existence of edge states on the boundary of a 2D system. In graphene, the edge states have distinct properties from the bulk states and play important roles in the physicochemical properties of the material. In this work, we show ab-initio results of spin-polarized electronic edge states in graphene quantum dots of different sizes and shape. We found a critical size at which the singlet nonmagnetic ground state becomes singlet open-shell with antiferromagnetic order. We found that the critical size is strongly influenced by the shape of the quantum dot. We discuss this behavior based on energetics and electronic structure of the system under study. The calculations are base on the Density functional Theory (DFT). The Linear Combination of Atomic Orbital (LCAO) method for bases functions it was used. For exchange-correlation functional has been used the Generalized Gradient Approximation (GGA).

  16. Spin polarization and magnetic dichroism in core-level photoemission from ferromagnets

    Energy Technology Data Exchange (ETDEWEB)

    Menchero, Jose Gabriel [Univ. of California, Berkeley, CA (United States). Dept. of Physics

    1997-05-01

    In this thesis we present a theoretical investigation of angle- and spin-resolved core-level photoemission from ferromagnetic Fe and Ni. We also consider magneto-dichroic effects due to reversal of the photon helicity or reversal of the sample magnetization direction. In chapter 1, we provide a brief outline of the history of photoemission, and show how it has played an important role in the development of modern physics. We then review the basic elements of the theory of core-level photoemission, and discuss the validity of the some of the commonly-used approximations. In chapter 2, we present a one-electron theory to calculate spin- and angle-resolved photoemission spectra for an arbitrary photon polarization. The Hamiltonian includes both spin-orbit and exchange interactions. As test cases for the theory, we calculate the spin polarization and magnetic dichroism for the Fe 2p core level, and find that agreement with experiment is very good.

  17. Coexistence of antiferromagnetism and spin polarization in double perovskite SrLaVMoO6

    International Nuclear Information System (INIS)

    Asano, H; Gotoh, H; Matsushima, H; Takeda, Y; Zhong, J; Rajanikanth, A; Hono, K

    2010-01-01

    The magnetic and transport properties of SrLaVMoO 6 bulk samples with an ordered double perovskite structure have been investigated. Magnetization measurements have indicated that the SrLaVMoO 6 compound exhibits a cusp at 125 K, which is attributable to an antiferromagnetic transition. Electrical resistivity ρ for the compound showed metallic temperature dependence from 10 to 300 K, and a spin polarization P value was measured to be 0.50 using the point-contact Andreev reflection (PCAR) technique. It has been found from X-ray photoemission spectroscopy (XPS) study that SrLaVMoO 6 closely resembles the half-metallic Sr 2 FeMoO 6 in the electronic state of the Mo.

  18. Nuclear spin polarized alkali beams (Na, Li): Optical pumping with electro-optically modulated laser beam

    International Nuclear Information System (INIS)

    Reich, H.; Jaensch, H.J.

    1990-01-01

    An improvement of the Heidelberg source for polarized heavy ions (PSI) is described. To produce a nuclear spin polarized atomic Na beam an electro-optically modulated laser beam has been used for optical pumping. An electro-optic modulator (EOM) was constructed with a bandwidth of 1.8 GHz. Without a spin separating Stern-Gerlach magnet it is now possible to prepare a Na atomic beam in one single hyperfine magnetic substate. Thus the beam figure of merit (polarization 2 x intensity of the beam) has been improved by a factor of 4 as compared to the previous setup. Experiences with the new system collected from several beam times are discussed. (orig.)

  19. Dirac cone with helical spin polarization in ultrathin α-Sn(001) films.

    Science.gov (United States)

    Ohtsubo, Yoshiyuki; Le Fèvre, Patrick; Bertran, François; Taleb-Ibrahimi, Amina

    2013-11-22

    Spin-split two-dimensional electronic states have been observed on ultrathin Sn(001) films grown on InSb(001) substrates. Angle-resolved photoelectron spectroscopy (ARPES) performed on these films revealed Dirac-cone-like linear dispersion around the Γ¯ point of the surface Brillouin zone, suggesting nearly massless electrons belonging to 2D surface states. The states disperse across a band gap between bulklike quantum well states in the films. Moreover, both circular dichroism of ARPES and spin-resolved ARPES studies show helical spin polarization of the Dirac-cone-like surface states, suggesting a topologically protected character as in a bulk topological insulator (TI). These results indicate that a quasi-3D TI phase can be realized in ultrathin films of zero-gap semiconductors.

  20. Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact

    Science.gov (United States)

    Pokhabov, D. A.; Pogosov, A. G.; Zhdanov, E. Yu.; Shevyrin, A. A.; Bakarov, A. K.; Shklyaev, A. A.

    2018-02-01

    The conductance of a GaAs-based suspended quantum point contact (QPC) equipped with lateral side gates has been experimentally studied in the absence of the external magnetic field. The half-integer conductance plateau ( 0.5 ×2 e2/h ) has been observed when an asymmetric voltage between the side gates is applied. The appearance of this plateau has been attributed to the spin degeneracy lifting caused by the spin-orbit coupling associated with the lateral electric field in the asymmetrically biased QPC. We have experimentally demonstrated that, despite the relatively small g-factor in GaAs, the observation of the spin polarization in the GaAs-based QPC became possible after the suspension due to the enhancement of the electron-electron interaction and the effect of the electric field guiding. These features are caused by a partial confinement of the electric field lines within a suspended semiconductor layer with a high dielectric constant.

  1. Local electron-electron interaction strength in ferromagnetic nickel determined by spin-polarized positron annihilation.

    Science.gov (United States)

    Ceeh, Hubert; Weber, Josef Andreas; Weber, Josef Andreass; Böni, Peter; Leitner, Michael; Benea, Diana; Chioncel, Liviu; Ebert, Hubert; Minár, Jan; Vollhardt, Dieter; Hugenschmidt, Christoph

    2016-02-16

    We employ a positron annihilation technique, the spin-polarized two-dimensional angular correlation of annihilation radiation (2D-ACAR), to measure the spin-difference spectra of ferromagnetic nickel. The experimental data are compared with the theoretical results obtained within a combination of the local spin density approximation (LSDA) and the many-body dynamical mean-field theory (DMFT). We find that the self-energy defining the electronic correlations in Ni leads to anisotropic contributions to the momentum distribution. By direct comparison of the theoretical and experimental results we determine the strength of the local electronic interaction U in ferromagnetic Ni as 2.0 ± 0.1 eV.

  2. Orientation and thickness dependence of magnetization at the interfacesof highly spin-polarized manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chopdekar, Rajesh V.; Arenholz, Elke; Suzuki, Y.

    2008-08-18

    We have probed the nature of magnetism at the surface of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films. The spin polarization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films is not intrinsically suppressed at all surfaces and interfaces but is highly sensitive to both the epitaxial strain state as well as the substrate orientation. Through the use of soft x-ray spectroscopy, the magnetic properties of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces have been investigated and compared to bulk magnetometry and resistivity measurements. The magnetization of (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces are more bulk-like as a function of thickness whereas the magnetization at the (001)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interface is suppressed significantly below a layer thickness of 20 nm. Such findings are correlated with the biaxial strain state of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films; for a given film thickness it is the tetragonal distortion of (001) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} that severely impacts the magnetization, whereas the trigonal distortion for (111)-oriented films and monoclinic distortion for (110)-oriented films have less of an impact. These observations provide evidence that surface magnetization and thus spin polarization depends strongly on the crystal surface orientation as well as epitaxial strain.

  3. Theory of current-induced spin polarization in an electron gas

    Science.gov (United States)

    Gorini, Cosimo; Maleki Sheikhabadi, Amin; Shen, Ka; Tokatly, Ilya V.; Vignale, Giovanni; Raimondi, Roberto

    2017-05-01

    We derive the Bloch equations for the spin dynamics of a two-dimensional electron gas in the presence of spin-orbit coupling. For the latter we consider both the intrinsic mechanisms of structure inversion asymmetry (Rashba) and bulk inversion asymmetry (Dresselhaus), and the extrinsic ones arising from the scattering from impurities. The derivation is based on the SU(2) gauge-field formulation of the Rashba-Dresselhaus spin-orbit coupling. Our main result is the identification of a spin-generation torque arising from Elliot-Yafet scattering, which opposes a similar term arising from Dyakonov-Perel relaxation. Such a torque, which to the best of our knowledge has gone unnoticed so far, is of basic nature, i.e., should be effective whenever Elliott-Yafet processes are present in a system with intrinsic spin-orbit coupling, irrespective of further specific details. The spin-generation torque contributes to the current-induced spin polarization (CISP), also known as inverse spin-galvanic or Edelstein effect. As a result, the behavior of the CISP turns out to be more complex than one would surmise from consideration of the internal Rashba-Dresselhaus fields alone. In particular, the symmetry of the current-induced spin polarization does not necessarily coincide with that of the internal Rashba-Dresselhaus field, and an out-of-plane component of the CISP is generally predicted, as observed in recent experiments. We also discuss the extension to the three-dimensional electron gas, which may be relevant for the interpretation of experiments in thin films.

  4. Fermi wave vector for the partially spin-polarized composite-fermion Fermi sea

    Science.gov (United States)

    Balram, Ajit C.; Jain, J. K.

    2017-12-01

    The fully spin-polarized composite-fermion (CF) Fermi sea at the half-filled lowest Landau level has a Fermi wave vector kF*=√{4 π ρe } , where ρe is the density of electrons or composite fermions, supporting the notion that the interaction between composite fermions can be treated perturbatively. Away from ν =1 /2 , the area is seen to be consistent with kF*=√{4 π ρe } for ν 1 /2 , where ρh is the density of holes in the lowest Landau level. This result is consistent with particle-hole symmetry in the lowest Landau level. We investigate in this article the Fermi wave vector of the spin-singlet CF Fermi sea (CFFS) at ν =1 /2 , for which particle-hole symmetry is not a consideration. Using the microscopic CF theory, we find that for the spin-singlet CFFS the Fermi wave vectors for up- and down-spin CFFSs at ν =1 /2 are consistent with kF*↑,↓=√{4 π ρe↑,↓ } , where ρe↑=ρe↓=ρe/2 , which implies that the residual interactions between composite fermions do not cause a nonperturbative correction for spin-singlet CFFS either. Our results suggest the natural conjecture that for arbitrary spin polarization the CF Fermi wave vectors are given by kF*↑=√{4 π ρe↑ } and kF*↓=√{4 π ρe↓ } .

  5. New directions in the theory of spin-polarized atomic hydrogen and deuterium

    International Nuclear Information System (INIS)

    Koelman, J.M.V.A.

    1988-01-01

    The three chapters of this thesis dealing with collisions between hydrogen (or deuterium) atoms in their ground state, each treat a different development in the theory of atomic hydrogen or deuterium gas. The decay due to interatomic collisions hindered till now all attempts to reach the low temperature, high-density regime where effects due to degeneracy are expected to show up. In ch. 2 a simple way out is presented for the case of Fermi gases: In spin-polarized Fermi systems at very low temperatures collisions are much effective than in Bose systems. For the Fermi gas, consisting of magnetically confined deuterium atoms, it appears that fast spin-exchange collisions automatically lead to a completely spin-polarized gas for which the spin-relaxation limited lifetime increases dramatically with decreasing temperature. As also the ratio of internal thermalization rate over decay rate increases with decreasing temperature, this gas can be cooled by forced evaporation down to very low temperatures. In ch. 3 it iis shown that the nuclear spin dynamics due to the hyperfine interaction during collisions, strongly limits the improvement in frequency stability attainable by H masers operating at low temperatures. In ch. 4 the phenomenon of spin waves is studied. It is shown that, despite the fact that interactions between two atoms are nuclear-spin independent, the outcome of a scattering event does not depend on the nuclear spins involved due to the particle indistinguishability effects at low collision energies. This effect gives rise to quantum phenomena on a macroscopic scale via the occurrence of spin waves. (author). 185 refs.; 34 figs

  6. Modeling optically pumped NMR and spin polarization in GaAs/AlGaAs quantum wells

    Science.gov (United States)

    Saha, D.; Wood, R.; Tokarski, J. T.; McCarthy, L. A.; Bowers, C. R.; Sesti, E. L.; Hayes, S. E.; Kuhns, P. L.; McGill, S. A.; Reyes, A. R.; Sanders, G. D.; Stanton, C. J.

    2014-08-01

    Optically-pumped nuclear magnetic resonance (OPNMR) spectroscopy is an emerging technique to probe electronic and nuclear spin properties in bulk and quantum well semiconductors. In OPNMR, one uses optical pumping with light to create spin-polarized electrons in a semiconductor. The electron spin can be transferred to the nuclear spin bath through the Fermi contact hyperfine interaction which can then be detected by conventional NMR. The resulting NMR signal can be enhanced four to five orders of magnitude or more over the thermal equilibrium signal. In previous work, we studied OPNMR in bulk GaAs where we investigated the strength of the OPNMR signal as a function of the pump laser frequency. This allowed us to study the spin-split valence band. Here we report on OPNMR studies in GaAs/AlGaAs quantum wells. We focus on theoretical calculations for the average electron spin polarization at different photon energies for different values of external magnetic field in both unstrained and strained quantum wells. Our calculations allow us to identify the Landau level transitions which are responsible for the peaks in the photon energy dependence of the OPNMR signal intensity. The calculations are based on the 8- band Pidgeon-Brown model generalized to include the effects of the quantum confinement potential as well as pseudomorphic strain at the interfaces. Optical properties are calculated within the golden rule approximation. Detailed comparison to experiment allows one to accurately determine valence band spin splitting in the quantum wells including the effects of strain.

  7. Reduced interface spin polarization by antiferromagnetically coupled Mn segregated to the C o2MnSi /GaAs (001) interface

    Science.gov (United States)

    Rath, Ashutosh; Sivakumar, Chockalingam; Sun, C.; Patel, Sahil J.; Jeong, Jong Seok; Feng, J.; Stecklein, G.; Crowell, Paul A.; Palmstrøm, Chris J.; Butler, William H.; Voyles, Paul M.

    2018-01-01

    We have investigated the interfacial structure and its correlation with the calculated spin polarization in C o2MnSi /GaAs(001) lateral spin valves. C o2MnSi (CMS) films were grown on As-terminated c(4 ×4 ) GaAs(100) by molecular beam epitaxy using different first atomic layers: MnSi, Co, and Mn. Atomically resolved Z -contrast scanning transmission electron microscopy (STEM) imaging and electron energy loss spectroscopy (EELS) were used to develop atomic structural models of the CMS/GaAs interfaces that were used as inputs for first-principles calculations to understand the magnetic and electronic properties of the interface. First-principles structures were relaxed and then validated by comparing experimental and simulated high-resolution STEM images. STEM-EELS results show that all three films have similar six atomic layer thick, Mn- and As-rich multilayer interfaces. However, the Co-initiated interface contains a M n2As -like layer, which is antiferromagnetic, and which is not present in the other two interfaces. Density functional theory calculations show a higher degree of interface spin polarization in the Mn- and MnSi-initiated cases, compared to the Co-initiated case, although none of the interfaces are half-metallic. The loss of half-metallicity is attributed, at least in part, to the segregation of Mn at the interface, which leads to the formation of interface states. The implications for the performance of lateral spin valves based on these interfaces are discussed briefly.

  8. Conductance and spin polarization for a quantum wire with the competition of Rashba and Dresselhaus spin-orbit coupling

    International Nuclear Information System (INIS)

    Fu Xi; Chen Zeshun; Zhong Feng; Zhou Guanghui

    2010-01-01

    We investigate theoretically the spin transport of a quantum wire (QW) with weak Rashba and Dresselhaus spin-orbit coupling (SOC) nonadiabatically connected to two normal leads. Using scattering matrix method and Landauer-Buettiker formula within effective free-electron approximation, we have calculated spin-dependent conductances G ↑ and G ↓ , total conductance G and spin polarization P z for a hard-wall potential confined QW. It is demonstrated that, the SOCs induce the splitting of G ↑ and G ↓ and form spin polarization P z . Moreover, the conductances present quantized plateaus, the plateaus and P z show oscillation structures near the subband edges. Furthermore, with the increase of QW width a strong spin polarization (P z ∼1) gradually becomes weak, which can be used to realize a spin filter. When the two SOCs coexist, the total conductance presents an isotropy transport due to the Rashba and Dresselhaus Hamiltonians being fixed, and the alteration of two SOCs strength ratio changes the sign of spin polarization. This may provide a way of realizing the expression of unit information by tuning gate voltage.

  9. Direct injection of spin-polarized carriers across YBa2Cu3O7−δ ...

    Indian Academy of Sciences (India)

    In summary, we have shown that the direct injection of spin-polarized carriers from LCMO into YBCO suppresses the critical current of the YBCO layer due to the breaking of the time reversal symmetry of the Cooper pairs. Further, our experiments show that when the ferromagnetic LCMO layer is in direct contact with YBCO, ...

  10. Spin dynamics in tunneling decay of a metastable state

    OpenAIRE

    Ban, Yue; Sherman, E. Ya.

    2012-01-01

    We analyze spin dynamics in the tunneling decay of a metastable localized state in the presence of spin-orbit coupling. We find that the spin polarization at short time scales is affected by the initial state while at long time scales both the probability- and the spin density exhibit diffraction-in-time phenomenon. We find that in addition to the tunneling time the tunneling in general can be characterized by a new parameter, the tunneling length. Although the tunneling length is independent...

  11. Single-molecule conductance of redox molecules in electrochemical scanning tunneling microscopy

    DEFF Research Database (Denmark)

    Haiss, W.; Albrecht, Tim; van Zalinge, H.

    2007-01-01

    across the molecular bridge through control of the electrochemical potential and consequently the redox state of the viologen moiety. This gating is theoretically considered within the framework of superexchange and coherent two-step notions for charge transport. It is shown here that the absence...... of a maximum in the I-tunneling versus electrode potential relationship can be fitted by a "soft" gating concept. This arises from large configurational fluctuations of the molecular bridge linked to the gold contacts by flexible chains. This view is incorporated in a formalism that is well-suited for data...

  12. A 10 mK scanning tunneling microscope operating in ultra high vacuum and high magnetic fields.

    Science.gov (United States)

    Assig, Maximilian; Etzkorn, Markus; Enders, Axel; Stiepany, Wolfgang; Ast, Christian R; Kern, Klaus

    2013-03-01

    We present design and performance of a scanning tunneling microscope (STM) that operates at temperatures down to 10 mK providing ultimate energy resolution on the atomic scale. The STM is attached to a dilution refrigerator with direct access to an ultra high vacuum chamber allowing in situ sample preparation. High magnetic fields of up to 14 T perpendicular and up to 0.5 T parallel to the sample surface can be applied. Temperature sensors mounted directly at the tip and sample position verified the base temperature within a small error margin. Using a superconducting Al tip and a metallic Cu(111) sample, we determined an effective temperature of 38 ± 1 mK from the thermal broadening observed in the tunneling spectra. This results in an upper limit for the energy resolution of ΔE = 3.5 kBT = 11.4 ± 0.3 μeV. The stability between tip and sample is 4 pm at a temperature of 15 mK as demonstrated by topography measurements on a Cu(111) surface.

  13. A 10Â mK scanning tunneling microscope operating in ultra high vacuum and high magnetic fields

    Science.gov (United States)

    Assig, Maximilian; Etzkorn, Markus; Enders, Axel; Stiepany, Wolfgang; Ast, Christian R.; Kern, Klaus

    2013-03-01

    We present design and performance of a scanning tunneling microscope (STM) that operates at temperatures down to 10 mK providing ultimate energy resolution on the atomic scale. The STM is attached to a dilution refrigerator with direct access to an ultra high vacuum chamber allowing in situ sample preparation. High magnetic fields of up to 14 T perpendicular and up to 0.5 T parallel to the sample surface can be applied. Temperature sensors mounted directly at the tip and sample position verified the base temperature within a small error margin. Using a superconducting Al tip and a metallic Cu(111) sample, we determined an effective temperature of 38 ± 1 mK from the thermal broadening observed in the tunneling spectra. This results in an upper limit for the energy resolution of ΔE = 3.5kBT = 11.4 ± 0.3 μeV. The stability between tip and sample is 4 pm at a temperature of 15 mK as demonstrated by topography measurements on a Cu(111) surface.

  14. Hydrophilicity and Microsolvation of an Organic Molecule Resolved on the Sub-molecular Level by Scanning Tunneling Microscopy.

    Science.gov (United States)

    Lucht, Karsten; Loose, Dirk; Ruschmeier, Maximilian; Strotkötter, Valerie; Dyker, Gerald; Morgenstern, Karina

    2018-01-26

    Low-temperature scanning tunneling microscopy was used to follow the formation of a solvation shell around an adsorbed functionalized azo dye from the attachment of the first water molecule to a fully solvated molecule. Specific functional groups bind initially one water molecule each, which act as anchor points for additional water molecules. Further water attachment occurs in areas close to these functional groups even when the functional groups themselves are already saturated. In contrast, water molecules surround the hydrophobic parts of the molecule only when the two-dimensional solvation shell closes around them. This study thus traces hydrophilic and hydrophobic properties of an organic molecule down to a sub-molecular length scale. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Strongly compressed Bi (111) bilayer films on Bi{sub 2}Se{sub 3} studied by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, K. F.; Yang, Fang; Song, Y. R. [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Liu, Canhua; Qian, Dong; Gao, C. L.; Jia, Jin-Feng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093 (China)

    2015-09-21

    Ultra-thin Bi films show exotic electronic structure and novel quantum effects, especially the widely studied Bi (111) film. Using reflection high-energy electron diffraction and scanning tunneling microscopy, we studied the structure and morphology evolution of Bi (111) thin films grown on Bi{sub 2}Se{sub 3}. A strongly compressed, but quickly released in-plane lattice of Bi (111) is found in the first three bilayers. The first bilayer of Bi shows a fractal growth mode with flat surface, while the second and third bilayer show a periodic buckling due to the strong compression of the in-plane lattice. The lattice slowly changes to its bulk value with further deposition of Bi.

  16. Mn doped InSb studied at the atomic scale by cross-sectional scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Mauger, S. J. C.; Bocquel, J.; Koenraad, P. M.; Feeser, C. E.; Parashar, N. D.; Wessels, B. W.

    2015-01-01

    We present an atomically resolved study of metal-organic vapor epitaxy grown Mn doped InSb. Both topographic and spectroscopic measurements have been performed by cross-sectional scanning tunneling microscopy (STM). The measurements on the Mn doped InSb samples show a perfect crystal structure without any precipitates and reveal that Mn acts as a shallow acceptor. The Mn concentration of the order of ∼10 20  cm −3 obtained from the cross-sectional STM data compare well with the intended doping concentration. While the pair correlation function of the Mn atoms showed that their local distribution is uncorrelated beyond the STM resolution for observing individual dopants, disorder in the Mn ion location giving rise to percolation pathways is clearly noted. The amount of clustering that we see is thus as expected for a fully randomly disordered distribution of the Mn atoms and no enhanced clustering or second phase material was observed

  17. Single molecule manipulation at low temperature and laser scanning tunnelling photo-induced processes analysis through time-resolved studies

    International Nuclear Information System (INIS)

    Riedel, Damien

    2010-01-01

    This paper describes, firstly, the statistical analysis used to determine the processes that occur during the manipulation of a single molecule through electronically induced excitations with a low temperature (5 K) scanning tunnelling microscope (STM). Various molecular operation examples are described and the ability to probe the ensuing molecular manipulation dynamics is discussed within the excitation context. It is, in particular, shown that such studies can reveal reversible manipulation for tuning dynamics through variation of the excitation energy. Secondly, the photo-induced process arising from the irradiation of the STM junction is also studied through feedback loop dynamics analysis, allowing us to distinguish between photo-thermally and photo-electronically induced signals.

  18. INTER-LAYER INTERACTION IN DOUBLE-WALLED CARBON NANOTUBES EVIDENCED BY SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY

    DEFF Research Database (Denmark)

    Giusca, Cristina E; Tison, Yann; Silva, S. Ravi P.

    2008-01-01

    and the overall electronic structure for double-walled carbon nanotubes, is demonstrated by our experiments, showing that the effect the inner tube has on the overall electronic structure of double-walled nanotubes cannot be neglected, and is key to the opto-electronic properties of the system. We postulate...... that previous analysis of the opto-electronic properties on multiple-walled carbon nanotubes based purely on the outer layer chirality of the tube needs significant modification based on new understanding brought forth with our analysis.......Scanning Tunneling Microscopy and Spectroscopy have been used in an attempt to elucidate the electronic structure of nanotube systems containing two constituent shells. Evidence for modified electronic structure due to the inter-layer interaction in double-walled carbon nanotubes is provided...

  19. Single molecule manipulation at low temperature and laser scanning tunnelling photo-induced processes analysis through time-resolved studies.

    Science.gov (United States)

    Riedel, Damien

    2010-07-07

    This paper describes, firstly, the statistical analysis used to determine the processes that occur during the manipulation of a single molecule through electronically induced excitations with a low temperature (5 K) scanning tunnelling microscope (STM). Various molecular operation examples are described and the ability to probe the ensuing molecular manipulation dynamics is discussed within the excitation context. It is, in particular, shown that such studies can reveal reversible manipulation for tuning dynamics through variation of the excitation energy. Secondly, the photo-induced process arising from the irradiation of the STM junction is also studied through feedback loop dynamics analysis, allowing us to distinguish between photo-thermally and photo-electronically induced signals. © 2010 IOP Publishing Ltd

  20. Attractive interaction between Mn atoms on the GaAs(110) surface observed by scanning tunneling microscopy.

    Science.gov (United States)

    Taninaka, Atsushi; Yoshida, Shoji; Kanazawa, Ken; Hayaki, Eiko; Takeuchi, Osamu; Shigekawa, Hidemi

    2016-06-16

    Scanning tunneling microscopy/spectroscopy (STM/STS) was carried out to investigate the structures of Mn atoms deposited on a GaAs(110) surface at room temperature to directly observe the characteristics of interactions between Mn atoms in GaAs. Mn atoms were paired with a probability higher than the random distribution, indicating an attractive interaction between them. In fact, re-pairing of unpaired Mn atoms was observed during STS measurement. The pair initially had a new structure, which was transformed during STS measurement into one of those formed by atom manipulation at 4 K. Mn atoms in pairs and trimers were aligned in the direction, which is theoretically predicted to produce a high Curie temperature.

  1. Quantum Tunneling of Magnetization in Single Molecular Magnets Coupled to Ferromagnetic Reservoirs

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2006-01-01

    The role of spin polarized reservoirs in quantum tunneling of magnetization and relaxation processes in a single molecular magnet (SMM) is investigated theoretically. The SMM is exchange-coupled to the reservoirs and also subjected to a magnetic field varying in time, which enables the quantum tunneling of magnetization (QTM). The spin relaxation times are calculated from the Fermi golden rule. The exchange interaction with tunneling electrons is shown to affect the spin reversal due to QTM. ...

  2. Magnetic tunnel junctions with Co:TiO2 magnetic semiconductor electrodes

    NARCIS (Netherlands)

    Lee, Y.J.; Abhishek Kumar, A.K.; Kumar, A.; Vera Marun, I.J.; de Jong, Machiel Pieter; Jansen, R.

    2010-01-01

    Spin-polarized tunneling is investigated in magnetic tunnel junctions containing an ultrathin interfacial layer of Co:TiO2 magnetic semiconductor. The Co:TiO2 layers (0 to 1 nm thick) are inserted at the SrTiO3/Co interface in La0.67Sr0.33MnO3/SrTiO3/Co tunnel junctions. For all junctions we find a

  3. Spin-polarized supercurrents for spintronics: a review of current progress.

    Science.gov (United States)

    Eschrig, Matthias

    2015-10-01

    During the past 15 years a new field has emerged, which combines superconductivity and spintronics, with the goal to pave a way for new types of devices for applications combining the virtues of both by offering the possibility of long-range spin-polarized supercurrents. Such supercurrents constitute a fruitful basis for the study of fundamental physics as they combine macroscopic quantum coherence with microscopic exchange interactions, spin selectivity, and spin transport. This report follows recent developments in the controlled creation of long-range equal-spin triplet supercurrents in ferromagnets and its contribution to spintronics. The mutual proximity-induced modification of order in superconductor-ferromagnet hybrid structures introduces in a natural way such evasive phenomena as triplet superconductivity, odd-frequency pairing, Fulde-Ferrell-Larkin-Ovchinnikov pairing, long-range equal-spin supercurrents, [Formula: see text]-Josephson junctions, as well as long-range magnetic proximity effects. All these effects were rather exotic before 2000, when improvements in nanofabrication and materials control allowed for a new quality of hybrid structures. Guided by pioneering theoretical studies, experimental progress evolved rapidly, and since 2010 triplet supercurrents are routinely produced and observed. We have entered a new stage of studying new phases of matter previously out of our reach, and of merging the hitherto disparate fields of superconductivity and spintronics to a new research direction: super-spintronics.

  4. Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

    Science.gov (United States)

    Manca, M.; Wang, G.; Kuroda, T.; Shree, S.; Balocchi, A.; Renucci, P.; Marie, X.; Durnev, M. V.; Glazov, M. M.; Sakoda, K.; Mano, T.; Amand, T.; Urbaszek, B.

    2018-04-01

    In III-V semiconductor nano-structures, the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics are widely studied, but little is known about the initialization mechanisms. Here, we investigate optical pumping of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X+ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage Vg. Variation of ΔVg on the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 μeV (-22%) to +10 μeV (+7%) although the X+ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X+ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X+ lifetime which is on the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.

  5. Effect of the anisotropy of the electron g-factor in spin polarization

    International Nuclear Information System (INIS)

    Miah, M. Idrish; Gray, E. MacA.

    2010-01-01

    Spin polarization in the presence of an external magnetic field and electric bias in quantum confined semiconductor structures has been studied by time- and polarization-resolved spectrometry. From measurements with angular variations of the magnetic field from the Voigt configuration (VC) it was found that both the frequency (Ω) and decay rate (β) of the oscillatory component of the polarization increase with variation of the angle from the VC. Their dependences are discussed based on the electron spin dephasing related to the spread of the electron g-factor (g e ) (i.e. unequal values of the longitudinal (g e|| ) and transverse (g e -perpendicular) components of g e ) and the exchange interaction between the electron and hole spins. It is demonstrated that the increase in Ω upon deviation of the magnetic field from the VC relates to the anisotropy of g e (g e|| and g e -perpendicular) resulting from the quantum confinement effect. However, the angular dependence on β is related to the residual exchange interaction between the electron spin and rapidly relaxing hole spin.

  6. a Spinning Polarizer and Spinning Analyzer Method for Visualizing the Isochromates in Conoscopic Interferometers

    Science.gov (United States)

    Olorunsola, Oluwatobi; Dada, Oluwaseye; Wang, Pengqian

    2013-09-01

    We have developed a spinning polarizer and spinning analyzer (SPSA) method to visualize the whole isochromatic fringes in conoscopic interferometers for the study of optically anisotropic materials. This simple method completely eliminates the broad and dark isogyre fringes appearing in a conventional conoscopic interferometer where a linear polarizer and a linear analyzer (LPLA) are used. Our method allows the direct visualization of the isochromates on the viewing screen by eyes in real time, without the need of additional optics or detectors other than those used in a conventional conoscopic interferometer, and no additional computation is required. This method works at any polarization state of the input light, and at any wavelength permitted by the polarizers. In the case of polychromatic illumination our method reveals the isochromates of all colors indiscriminatively, in comparison to the method of circular polarizer and circular analyzer (CPCA), which is considerably subject to spectrum modulation due to the dispersion in the retardation of the quarter-wave plates. The proposed method is demonstrated in a lithium niobate (LiNbO3) crystal driven by an external electric field.

  7. Spin-polarized transport through single-molecule magnet Mn6 complexes

    KAUST Repository

    Cremades, Eduard

    2013-01-01

    The coherent transport properties of a device, constructed by sandwiching a Mn6 single-molecule magnet between two gold surfaces, are studied theoretically by using the non-equilibrium Green\\'s function approach combined with density functional theory. Two spin states of such Mn6 complexes are explored, namely the ferromagnetically coupled configuration of the six MnIII cations, leading to the S = 12 ground state, and the low S = 4 spin state. For voltages up to 1 volt the S = 12 ground state shows a current one order of magnitude larger than that of the S = 4 state. Furthermore this is almost completely spin-polarized, since the Mn6 frontier molecular orbitals for S = 12 belong to the same spin manifold. As such the high-anisotropy Mn6 molecule appears as a promising candidate for implementing, at the single molecular level, both spin-switches and low-temperature spin-valves. © 2013 The Royal Society of Chemistry.

  8. Laser-driven source of spin-polarized atomic hydrogen and deuterium

    International Nuclear Information System (INIS)

    Poelker, M.

    1995-01-01

    A laser-driven source of spin-polarized hydrogen (H) and deuterium (D) that relies on the technique of optical pumping spin exchange has been constructed. In this source, H or D atoms and potassium atoms flow continuously through a drifilm-coated spin-exchange cell where potassium atoms are optically pumped with circularly-polarized laser light in a high magnetic field. The H or D atoms become polarized through spin-exchange collisions with polarized potassium atoms. High electron polarization (∼80%) has been measured for H and D atoms at flow rates ∼2x10 17 atoms/s. Lower polarization values are measured for flow rates exceeding 1x10 18 atoms/s. In this paper, we describe the performance of the laser-driven source as a function of H and D atomic flow rate, magnetic field strength, alkali density and pump-laser power. Polarization measurements as a function of flow rate and magnetic field suggest that, despite a high magnetic field, atoms within the optical-pumping spin-exchange apparatus evolve to spin-temperature equilibrium which results in direct polarization of the H and D nuclei. (orig.)

  9. Effect of the anisotropy of the electron g-factor in spin polarization

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong 4331 (Bangladesh); Gray, E. MacA. [Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

    2010-02-15

    Spin polarization in the presence of an external magnetic field and electric bias in quantum confined semiconductor structures has been studied by time- and polarization-resolved spectrometry. From measurements with angular variations of the magnetic field from the Voigt configuration (VC) it was found that both the frequency ({Omega}) and decay rate ({beta}) of the oscillatory component of the polarization increase with variation of the angle from the VC. Their dependences are discussed based on the electron spin dephasing related to the spread of the electron g-factor (g{sub e}) (i.e. unequal values of the longitudinal (g{sub e||}) and transverse (g{sub e}-perpendicular) components of g{sub e}) and the exchange interaction between the electron and hole spins. It is demonstrated that the increase in {Omega} upon deviation of the magnetic field from the VC relates to the anisotropy of g{sub e} (g{sub e||} and g{sub e}-perpendicular) resulting from the quantum confinement effect. However, the angular dependence on {beta} is related to the residual exchange interaction between the electron spin and rapidly relaxing hole spin.

  10. Domain Wall Dynamics Driven by a Localized Injection of a Spin-Polarized Current

    Science.gov (United States)

    Finocchio, Giovanni; Maugeri, Natale; Torres, Luis; Azzerboni, Bruno

    2010-06-01

    This paper introduces an oscillator scheme based on the oscillations of magnetic domain walls due to spin-polarized currents, where the current is injected perpendicular to the sample plane in a localized part of a nanowire. Depending on the geometrical and physical characteristic of the system, we identify two different dynamical regimes (auto-oscillations) when an out-of-plane external field is applied. The first regime is characterized by nucleation of domain walls (DWs) below the current injection site and the propagation of those up to the end of the nanowire, we also found an oscillation frequency larger than 5GHz with a linear dependence on the applied current density. This simple system can be used as a tuneable steady-state domain wall oscillator. In the second dynamical regime, we observe the nucleation of two DWs which propagate back and forth in the nanowire with a sub-GHz oscillation frequency. The micromagnetic spectral mapping technique shows the spatial distribution of the output power is localized symmetrically in the nanowire. We suggest that this configuration can be used as micromagnetic transformer to decouple electrically two different circuits.

  11. Measuring the spin polarization of alkali-metal atoms using nuclear magnetic resonance frequency shifts of noble gases

    Directory of Open Access Journals (Sweden)

    X. H. Liu

    2015-10-01

    Full Text Available We report a novel method of measuring the spin polarization of alkali-metal atoms by detecting the NMR frequency shifts of noble gases. We calculated the profile of 87Rb D1 line absorption cross sections. We then measured the absorption profile of the sample cell, from which we calculated the 87Rb number densities at different temperatures. Then we measured the frequency shifts resulted from the spin polarization of the 87Rb atoms and calculated its polarization degrees at different temperatures. The behavior of frequency shifts versus temperature in experiment was consistent with theoretical calculation, which may be used as compensative signal for the NMRG closed-loop control system.

  12. Thermally induced pure and spin polarized currents in a zigzag silicene nanoribbon based FM/normal/AFM junction

    Science.gov (United States)

    Ghanbari, Atousa; Esmaeilzadeh, Mahdi; Pournaghavi, Nezhat

    2018-01-01

    We study thermally induced spin resolved current in a zigzag silicene nanoribbon when the left and right leads are respectively affected by ferromagnetic (FM) and anti-ferromagnetic (AFM) exchange fields (FM/normal/AFM junction). We show that pure spin current is generated due to the leads temperature difference and the junction can work as a spin Seebeck diode. The pure spin current can be easily controlled by a perpendicular electric field and the junction, in this case, can work as a spin current switch. In addition, we study the effect of a single vacancy and show that the vacancy can slightly destroy the pure spin current property which leads to induce a weak spin polarized current. In the presence of both vacancy and electric field, current with high and tunable spin polarization can be achieved.

  13. Spin polarization driven by a charge-density wave in monolayer 1T−TaS2

    KAUST Repository

    Zhang, Qingyun

    2014-08-06

    Using first-principles calculations, we investigate the electronic and vibrational properties of monolayer T-phase TaS2. We demonstrate that a charge-density wave is energetically favorable at low temperature, similar to bulk 1T-TaS2. Electron-phonon coupling is found to be essential for the lattice reconstruction. The charge-density wave results in a strong localization of the electronic states near the Fermi level and consequently in spin polarization, transforming the material into a magnetic semiconductor with enhanced electronic correlations. The combination of inherent spin polarization with a semiconducting nature distinguishes the monolayer fundamentally from the bulk compound as well as from other two-dimensional transition metal dichalcogenides. Monolayer T-phase TaS2 therefore has the potential to enable two-dimensional spintronics. © 2014 American Physical Society.

  14. Period-doubling bifurcation cascade observed in a ferromagnetic nanoparticle under the action of a spin-polarized current

    Energy Technology Data Exchange (ETDEWEB)

    Horley, Paul P., E-mail: paul.horley@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Kushnir, Mykola Ya. [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi (Ukraine); Morales-Meza, Mishel [Centro de Investigación en Materiales Avanzados, S.C. (CIMAV), Chihuahua/Monterrey, 120 Avenida Miguel de Cervantes, 31109 Chihuahua (Mexico); Sukhov, Alexander [Institut für Physik, Martin-Luther Universität Halle-Wittenberg, 06120 Halle (Saale) (Germany); Rusyn, Volodymyr [Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., 58012 Chernivtsi (Ukraine)

    2016-04-01

    We report on complex magnetization dynamics in a forced spin valve oscillator subjected to a varying magnetic field and a constant spin-polarized current. The transition from periodic to chaotic magnetic motion was illustrated with bifurcation diagrams and Hausdorff dimension – the methods developed for dissipative self-organizing systems. It was shown that bifurcation cascades can be obtained either by tuning the injected spin-polarized current or by changing the magnitude of applied magnetic field. The order–chaos transition in magnetization dynamics can be also directly observed from the hysteresis curves. The resulting complex oscillations are useful for development of spin-valve devices operating in harmonic and chaotic modes.

  15. Spin-polarized quasi-one-dimensional state with finite band gap on the Bi/InSb(001) surface

    Science.gov (United States)

    Kishi, J.; Ohtsubo, Y.; Nakamura, T.; Yaji, K.; Harasawa, A.; Komori, F.; Shin, S.; Rault, J. E.; Le Fèvre, P.; Bertran, F.; Taleb-Ibrahimi, A.; Nurmamat, M.; Yamane, H.; Ideta, S.; Tanaka, K.; Kimura, S.

    2017-11-01

    One-dimensional (1D) electronic states were discovered on the 1D surface atomic structure of Bi fabricated on semiconductor InSb(001) substrates by angle-resolved photoelectron spectroscopy (ARPES). The 1D state showed steep, Dirac-cone-like dispersion along the 1D atomic structure with a finite direct band gap opening as large as 150 meV. Moreover, spin-resolved ARPES revealed the spin polarization of the 1D unoccupied states as well as that of the occupied states, the orientation of which inverted depending on the wave-vector direction parallel to the 1D array on the surface. These results reveal that a spin-polarized quasi-1D carrier was realized on the surface of 1D Bi with highly efficient backscattering suppression, showing promise for use in future spintronics and energy-saving devices.

  16. Non-dipole effects in spin polarization of photoelectrons from 3d electrons of Xe, Cs and Ba

    Energy Technology Data Exchange (ETDEWEB)

    Amusia, M Ya [Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel); Cherepkov, N A [State University of Aerospace Instrumentation, St. Petersburg 190000 (Russian Federation); Chernysheva, L V [A F Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Felfli, Z [Department of Physics and Center for Theoretical Studies of Physical Systems, Clark Atlanta University, Atlanta GA 30314 (United States); Msezane, A Z [Department of Physics and Center for Theoretical Studies of Physical Systems, Clark Atlanta University, Atlanta GA 30314 (United States)

    2005-04-28

    The non-dipole contribution to spin polarization of photoelectrons from Xe, Cs and Ba 3d{sub 5/2} and 3d{sub 3/2} levels is calculated. The calculation is carried out within the framework of a modified version of the spin-polarized random phase approximation with exchange. The effects of relaxation of excited electrons due to the 3d-vacancy creation are also accounted for. It is demonstrated that the parameters that characterize the photoelectron angular distribution as functions of the incoming photon energy, although being predictably small, acquire additional peculiarities when the interaction between electrons that belong to the 3d{sub 5/2} and 3d{sub 3/2} components of the spin-orbit doublet is taken into account.

  17. Influence of intrinsic spin-flip processes on spin-polarized transport through quantum dots in the cotunneling regime

    International Nuclear Information System (INIS)

    Weymann, I.; Barnas, J.

    2006-01-01

    The influence of intrinsic spin relaxation on spin-polarized cotunneling through quantum dots coupled to ferromagnetic leads is analyzed theoretically. It is shown that the zero bias anomaly, which occurs due to the interplay of single-barrier and double-barrier cotunneling processes, becomes suppressed by spin relaxation processes on the dot. Diode-like features of the transport characteristics in the cotunneling regime have been found in asymmetrical systems. These features are also suppressed by the spin relaxation processes

  18. A novel cryogenic scanning laser microscope tested on Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Holm, Jesper; Mygind, Jesper

    1995-01-01

    A novel cryogenic scanning laser microscope with a spatial resolution of less than 5 µm has been designed for on-chip in situ investigations of the working properties of normal and superconducting circuits and devices. The instrument relies on the detection of the electrical response of the circuit...... to a very localized heating induced by irradiation with 675 nm wavelength light from a semiconductor laser. The hot spot is moved by a specially designed piezoelectric scanner sweeping the tip of a single-mode optical fiber a few µm above the circuit. Depending on the scanner design the scanning area can...... be as large as 50×500 µm2 at 4.2 K. The microscope can be operated in the temperature range 2–300 K using a standard temperature controller. The central microscope body is mounted inside the vacuum can of a dip-stick-type cryoprobe. A damped spring system is used to reduce interference from extraneous...

  19. Cadmium underpotential deposition on Cu(111) in situ scanning tunneling microscopy.

    Science.gov (United States)

    Hommrich, J; Hümann, S; Wandelt, K

    2002-01-01

    Atomically resolved in situ STM images are presented for an underpotentially deposited (upd) cadmium layer on a Cu(111) electrode from a 10(-4) M CdCl2/10(-2) M HCl solution. The observed moiré-like structure seen in the images is analysed by means of an algebraic model for this long-range superstructure. A structure model for the upd layer is developed which reflects all features of the observed moiré pattern. Furthermore the height modulation was simulated by a hard-sphere model for the Cd overlayer and shows remarkable agreement with the detailed tunneling current density distribution of the measured STM images. The existence of translational and rotational domains is demonstrated. The results are also compared and shown to be fully consistent with previous (ex situ) low-energy electron diffraction (LEED) observations of this system. The mechanism of Cd upd involves a dynamic site exchange between preadsorbed Cl- anions and adsorbing Cd2+ cations as previously concluded from ex situ X-ray photoelectron (XPS) and low-energy ion scattering (LEIS) measurements.

  20. Development of Near-Field Microwave Microscope with the Functionality of Scanning Tunneling Spectroscopy

    Science.gov (United States)

    Machida, Tadashi; Gaifullin, Marat B.; Ooi, Shuuich; Kato, Takuya; Sakata, Hideaki; Hirata, Kazuto

    2010-11-01

    We describe the details of an original near-field scanning microwave microscope, developed for simultaneous measurements of local density-of-states (LDOS) and local ohmic losses (LOL). Improving microwave detection systems, we have succeeded in distinguishing the LDOS and LOL even between two low resistance materials; gold and highly orientated pyrolitic graphite. The experimental data indicate that our microscope holds a capability to investigate both LDOS and LOL in nanoscale.

  1. Design and calibration of a scanning tunneling microscope for large machined surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Grigg, D.A.; Russell, P.E.; Dow, T.A.

    1988-12-01

    During the last year the large sample STM has been designed, built and used for the observation of several different samples. Calibration of the scanner for prope dimensional interpretation of surface features has been a chief concern, as well as corrections for non-linear effects such as hysteresis during scans. Several procedures used in calibration and correction of piezoelectric scanners used in the laboratorys STMs are described.

  2. Electrochemistry and in situ scanning tunnelling microscopy of pure and redox-marked DNA- and UNA-based oligonucleotides on Au(111)-electrode surfaces

    DEFF Research Database (Denmark)

    Hansen, Allan Glargaard; Salvatore, Princia; Karlsen, K.

    2013-01-01

    We have studied adsorption and electrochemical electron transfer of several 13- and 15-base DNA and UNA (unlocked nucleic acids) oligonucleotides (ONs) linked to Au(111)-electrode surfaces via a 50-C6-SH group using cyclic voltammetry (CV) and scanning tunnelling microscopy in aqueous buffer under...

  3. Topographic and electronic contrast of the graphene moir´e on Ir(111) probed by scanning tunneling microscopy and noncontact atomic force microscopy

    NARCIS (Netherlands)

    Sun, Z.; Hämäläinen, K.; Sainio, K.; Lahtinen, J.; Vanmaekelbergh, D.A.M.; Liljeroth, P.

    2011-01-01

    Epitaxial graphene grown on transition-metal surfaces typically exhibits a moir´e pattern due to the lattice mismatch between graphene and the underlying metal surface. We use both scanning tunneling microscopy (STM) and atomic force microscopy (AFM) to probe the electronic and topographic contrast

  4. Monte Carlo studies of thermalization of electron-hole pairs in spin-polarized degenerate electron gas in monolayer graphene

    Science.gov (United States)

    Borowik, Piotr; Thobel, Jean-Luc; Adamowicz, Leszek

    2018-02-01

    Monte Carlo method is applied to the study of relaxation of excited electron-hole (e-h) pairs in graphene. The presence of background of spin-polarized electrons, with high density imposing degeneracy conditions, is assumed. To such system, a number of e-h pairs with spin polarization parallel or antiparallel to the background is injected. Two stages of relaxation: thermalization and cooling are clearly distinguished when average particles energy and its standard deviation σ _E are examined. At the very beginning of thermalization phase, holes loose energy to electrons, and after this process is substantially completed, particle distributions reorganize to take a Fermi-Dirac shape. To describe the evolution of and σ _E during thermalization, we define characteristic times τ _ {th} and values at the end of thermalization E_ {th} and σ _ {th}. The dependence of these parameters on various conditions, such as temperature and background density, is presented. It is shown that among the considered parameters, only the standard deviation of electrons energy allows to distinguish between different cases of relative spin polarizations of background and excited electrons.

  5. Insight into electronic, mechanical and transport properties of quaternary CoVTiAl: Spin-polarized DFT + U approach

    Energy Technology Data Exchange (ETDEWEB)

    Yousuf, Saleem, E-mail: nengroosaleem17@gmail.com; Gupta, D.C., E-mail: sosfizix@gmail.com

    2017-07-15

    Highlights: • 100% spin-polarized material important for the application in spintronics. • It is ferromagnetic and ductile in nature. • Shows semiconducting behavior with a band gap of 1.06 eV. • Possibly efficient high temperature thermoelectric material. - Abstract: We present a preliminary investigation of band structure and thermoelectric properties of new quaternary CoVTiAl Heusler alloy. Structural, magnetic property and 100% spin polarization of equiatomic CoVTiAl predicts ferromagnetic stable ground state. Band profile outlines the indirect semiconducting behavior in spin down channel with band gap of 1.06 eV, and the magnetic moment of 3 µ{sub B} in accordance with Slater-Pauling rule. To evaluate the accuracy of different approximations in predicting thermoelectric properties, the comparison with available experimental data is made which shows fair agreement for the transport coefficients. The high temperature (800 K) positive Seebeck coefficient of 73.71 µV/K describes the p-type character of the material with high efficiency due to highly influential semiconducting behavior around the Fermi level. Considering the combination of 100% spin-polarization, high Seebeck coefficient and large figure of merit, ferromagnetic semiconducting CoVTiAl may prove as a potential candidate for high temperature thermoelectrics and an ideal spin source material for spintronic applications.

  6. Combined low-temperature scanning tunneling/atomic force microscope for atomic resolution imaging and site-specific force spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Schwarz, Udo; Albers, Boris J.; Liebmann, Marcus; Schwendemann, Todd C.; Baykara, Mehmet Z.; Heyde, Markus; Salmeron, Miquel; Altman, Eric I.; Schwarz, Udo D.

    2008-02-27

    The authors present the design and first results of a low-temperature, ultrahigh vacuum scanning probe microscope enabling atomic resolution imaging in both scanning tunneling microscopy (STM) and noncontact atomic force microscopy (NC-AFM) modes. A tuning-fork-based sensor provides flexibility in selecting probe tip materials, which can be either metallic or nonmetallic. When choosing a conducting tip and sample, simultaneous STM/NC-AFM data acquisition is possible. Noticeable characteristics that distinguish this setup from similar systems providing simultaneous STM/NC-AFM capabilities are its combination of relative compactness (on-top bath cryostat needs no pit), in situ exchange of tip and sample at low temperatures, short turnaround times, modest helium consumption, and unrestricted access from dedicated flanges. The latter permits not only the optical surveillance of the tip during approach but also the direct deposition of molecules or atoms on either tip or sample while they remain cold. Atomic corrugations as low as 1 pm could successfully be resolved. In addition, lateral drifts rates of below 15 pm/h allow long-term data acquisition series and the recording of site-specific spectroscopy maps. Results obtained on Cu(111) and graphite illustrate the microscope's performance.

  7. Rashba and Dresselhaus spin-orbit coupling effects on tunnelling through two-dimensional magnetic quantum systems

    International Nuclear Information System (INIS)

    Xu Wen; Guo Yong

    2005-01-01

    We investigate the influence of the Rashba and Dresselhaus spin-orbit coupling interactions on tunnelling through two-dimensional magnetic quantum systems. It is showed that not only Rashba spin-orbit coupling but also Dresselhaus one can affect spin tunnelling properties greatly in such a quantum system. The transmission possibility, the spin polarization and the conductance are obviously oscillated with both coupling strengths. High spin polarization, conductance and magnetic conductance of the structure can be obtained by modulating either Rashba or Dresselhaus coupling strength

  8. Tunneling conductance of a two-dimensional electron gas with Dresselhaus spin-orbit coupling

    International Nuclear Information System (INIS)

    Srisongmuang, B.; Ka-oey, A.

    2012-01-01

    We theoretically studied the spin-dependent charge transport in a two-dimensional electron gas with Dresselhaus spin-orbit coupling (DSOC) and metal junctions. It is shown that the DSOC energy can be directly measured from the tunneling conductance spectrum. We found that spin polarization of the conductance in the propagation direction can be obtained by injecting from the DSOC system. We also considered the effect of the interfacial scattering barrier (both spin-flip and non-spin-flip scattering) on the overall conductance and the spin polarization of the conductance. It is found that the increase of spin-flip scattering can enhance the conductance under certain conditions. Moreover, both types of scattering can increase the spin polarization below the branches crossing of the energy band. - Highlights: → DSOC energy can be directly measured from tunneling conductance spectrum. → Spin polarization of conductance in the propagation direction can be obtained by injecting from DSOC system. → Both types of scattering can increase spin polarization.

  9. Fabrication of highly spin-polarized Co2FeAl0.5Si0.5 thin-films

    Directory of Open Access Journals (Sweden)

    M. Vahidi

    2014-04-01

    Full Text Available Ferromagnetic Heusler Co2FeAl0.5Si0.5 epitaxial thin-films have been fabricated in the L21 structure with saturation magnetizations over 1200 emu/cm3. Andreev reflection measurements show that the spin polarization is as high as 80% in samples sputtered on unheated MgO (100 substrates and annealed at high temperatures. However, the spin polarization is considerably smaller in samples deposited on heated substrates.

  10. NMR investigations of surfaces and interfaces using spin-polarized xenon

    Energy Technology Data Exchange (ETDEWEB)

    Gaede, Holly Caroline [Univ. of California, Berkeley, CA (United States). Dept. of Chemistry

    1995-07-01

    129Xe NMR is potentially useful for the investigation of material surfaces, but has been limited to high surface area samples in which sufficient xenon can be loaded to achieve acceptable signal to noise ratios. In Chapter 2 conventional 129Xe NMR is used to study a high surface area polymer, a catalyst, and a confined liquid crystal to determine the topology of these systems. Further information about the spatial proximity of different sites of the catalyst and liquid crystal systems is determined through two dimensional exchange NMR in Chapter 3. Lower surface area systems may be investigated with spin-polarized xenon, which may be achieved through optical pumping and spin exchange. Optically polarized xenon can be up to 105times more sensitive than thermally polarized xenon. In Chapter 4 highly polarized xenon is used to examine the surface of poly(acrylonitrile) and the formation of xenon clathrate hydrates. An attractive use of polarized xenon is as a magnetization source in cross polarization experiments. Cross polarization from adsorbed polarized xenon may allow detection of surface nuclei with drastic enhancements. A non-selective low field thermal mixing technique is used to enhance the 13C signal of CO2 of xenon occluded in solid CO2 by a factor of 200. High-field cross polarization from xenon to proton on the surface of high surface area polymers has enabled signal enhancements of ~1,000. These studies, together with investigations of the efficiency of the cross polarization process from polarized xenon, are discussed in Chapter 5. Another use of polarized xenon is as an imaging contrast agent in systems that are not compatible with traditional contrast agents. The resolution attainable with this method is determined through images of structured phantoms in Chapter 6.

  11. Production of highly spin-polarized atomic hydrogen and deuterium by spin-exchange

    International Nuclear Information System (INIS)

    Redsun, S.G.

    1990-01-01

    The first part of this work is a study of the production of highly spin-polarized atomic hydrogen and deuterium by spin-exchange optical pumping. A tunable ring dye laser is used to polarize rubidium atoms by optical pumping. The cell containing the rubidium vapor is coated with paraffin in order to reduce spin relaxation due to wall collisions. Hydrogen gas is dissociated in an inductive discharge and flows continuously through the cell, in which the hydrogen atoms are polarized by spin-exchange collisions with the polarized rubidium atoms. The hydrogen polarization is determined by a combination of fluorescence monitoring and magnetic resonance spectroscopy. Atomic hydrogen polarization as high as 2 z > H = 0.72(6) has been observed, which is the highest degree of polarization yet produced by this method. However, the polarization may be limited to this value due to the depolarization of the rubidium by radiation trapping. The spin-relaxation rate of atomic hydrogen on a paraffin-coated cell is also measured for the first time, and corresponds to about 3,800 wall bounces before electron-spin randomization. The second part of this work is a theoretical analysis of the problem of radiation trapping in a dense optically pumped alkali vapor. A Monte Carlo routine is used to simulate the trajectories of multiply scattered photons. The average spin angular momentum transfer from the photons to the vapor is used to determine the equilibrium polarization of the vapor as a function of the alkali density and the frequency of the pumping light

  12. Quantum properties of spin polarized helium 3 optically oriented by a LNA laser

    International Nuclear Information System (INIS)

    Leduc, M.; Laloe, F.; Nacher, P.J.; Tastevin, G.; Daniels, J.M.; Betts, D.

    1986-01-01

    Spin polarized helium 3 (/sup 3/He increasing) and also atomic hydrogen (H decreasing) are systems exhibiting a number of unusual and interesting properties at low temperature. This is true even for dilute polarized gases in spite of the weakness of the nuclear magnetic interaction between atoms. The changes in the macroscopic properties of the gas with the nuclear polarization P are pure consequences of the indistinguishability of the particles and of the symmetrization principle in quantum mechanics. The transport properties of the gas, such as viscosity and thermal conductivity, have been calculated and found to be strongly dependent on P below a few kelvins. Spin transport in /sup 3/He increasing gives rise at low temperature to collective oscillatory modes: the transverse spin waves. Large changes are also expected with P in the case of more dense /sup 3/He fluids, such as an increase with P in the saturated vapor pressure. Optical pumping is a convenient technique for efficient polarization of the nuclear spins in /sup 3/He gas/sup 2/ making use of the 2/sup 3/S-2/sup 3/P atomic line at 1.08 μm. The arrival of cw tunable lasers in the near IR in the early 1980s gave a strong impulse to the buildup of experiments with a view to measuring quantum properties of /sup 3/He increasing at low temperature. Color center lasers (F/sup +//sub 2/ in NaF) provide P values up to 70%. They are now being replaced by more easy to handle LNA lasers which have given so far P in excess of 50% at room temperature. At low temperature, direct optical pumping of a /sup 3/He cell leads to poor P values; for that reason a different technique is used

  13. Insulating nanoparticles on YBa2Cu3O7-δ thin films revealed by comparison of atomic force and scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Thomson, R.E.; Moreland, J.; Missert, N.; Rudman, D.A.; Sanders, S.C.; Cole, B.F.

    1993-01-01

    The surface topography of YBa 2 Cu 3 O 7-δ thin films has been studied with both atomic force microscopy (AFM) and scanning tunneling microscopy (STM). The AFM images reveal a high density of small distinct nanoparticles, 10--50 nm across and 5--20 nm high, which do not appear in STM images of the same samples. In addition, we have shown that scanning the STM tip across the surface breaks off these particles and moves them to the edge of the scanned area, where they can later be imaged with the AFM

  14. [Scanning electron microscopic investigations of cutting edge quality in lamellar keratotomy using the Wavelight femtosecond laser (FS-200) : What influence do spot distance and an additional tunnel have?

    Science.gov (United States)

    Hammer, T; Höche, T; Heichel, J

    2018-01-01

    Femtosecond lasers (fs-lasers) are established cutting instruments for the creation of LASIK flaps. Previous studies often showed even rougher surfaces after application of fs-laser systems compared to lamellar keratotomy with mechanical microkeratomes. When cutting the cornea with fs-lasers, an intrastromal gas development occurs, which has a potentially negative influence on the cutting quality if the gas cannot be dissipated; therefore, manufacturers have chosen the way of gas assimilation in so-called pockets. The investigated system creates a tunnel which opens under the conjunctiva. The aim of this study was to investigate the effects of a tunnel as well as the influence of different spot distances on the quality of cut surfaces and edges. In this experimental study on freshly enucleated porcine eyes (n = 15), the following cuts were carried out with the FS-200 (Wavelight, Erlangen, Germany): 1. standard setting (spot and line separation 8 µm), 2. with tunnel for gas drainage, 3. without gas-conducting tunnel, 4. with increased spot spacing (spot and line separation 9 μm instead of 8 μm) and 5. with reduced spot spacing (spot and line separation 7 μm instead of 8 μm). Subsequently, scanning electron microscopy (FEI Quanta 650, Hillsboro, OR) of the cut edges and surfaces as well as the gas drain tunnel were performed. The evaluation was based on an established score. The current fs-laser system (200 Hz) is able to create smooth cutting surfaces and sharp edges. The changed density of laser pulses compared to the standard settings with a reduced or increased distance between the pulses, did not achieve any further improvement in the surface quality. The gas-conducting tunnel could be detected by scanning electron microscope. In the case of cutting without a tunnel, roughened surfaces and irregularities on the cutting edges were found. When the FS-200 fs-laser is used, LASIK cuts with very smooth cut surfaces and sharp cutting

  15. Demonstration and uncertainty analysis of synchronised scanning lidar measurements of 2-D velocity fields in a boundary-layer wind tunnel

    Directory of Open Access Journals (Sweden)

    M. F. van Dooren

    2017-06-01

    Full Text Available This paper combines the research methodologies of scaled wind turbine model experiments in wind tunnels with short-range WindScanner lidar measurement technology. The wind tunnel at the Politecnico di Milano was equipped with three wind turbine models and two short-range WindScanner lidars to demonstrate the benefits of synchronised scanning lidars in such experimental surroundings for the first time. The dual-lidar system can provide fully synchronised trajectory scans with sampling timescales ranging from seconds to minutes. First, staring mode measurements were compared to hot-wire probe measurements commonly used in wind tunnels. This yielded goodness of fit coefficients of 0.969 and 0.902 for the 1 Hz averaged u and v components of the wind speed, respectively, validating the 2-D measurement capability of the lidar scanners. Subsequently, the measurement of wake profiles on a line as well as wake area scans were executed to illustrate the applicability of lidar scanning to the measurement of small-scale wind flow effects. An extensive uncertainty analysis was executed to assess the accuracy of the method. The downsides of lidar with respect to the hot-wire probes are the larger measurement probe volume, which compromises the ability to measure turbulence, and the possible loss of a small part of the measurements due to hard target beam reflection. In contrast, the benefits are the high flexibility in conducting both point measurements and area scanning and the fact that remote sensing techniques do not disturb the flow during measuring. The research campaign revealed a high potential for using short-range synchronised scanning lidars to measure the flow around wind turbines in a wind tunnel and increased the knowledge about the corresponding uncertainties.

  16. Atomic mechanism for the growth of wafer-scale single-crystal graphene: theoretical perspective and scanning tunneling microscopy investigations

    Science.gov (United States)

    Niu, Tianchao; Zhang, Jialin; Chen, Wei

    2017-12-01

    Chemical vapor deposition (CVD) is the most promising approach for producing low-cost, high-quality, and large area graphene. Revealing the graphene growth mechanism at the atomic-scale is of great importance for realizing single crystal graphene (SCG) over wafer scale. Density functional theoretical (DFT) calculations are playing an increasingly important role in revealing the structure of the most stable carbon species, understanding the evolution processes, and disclosing the active sites. Scanning tunneling microscopy (STM) is a powerful surface characterization tool to illustrate the real space distribution and atomic structures of growth intermediates during the CVD process. Combining them together can provide valuable information to improve the atomically controlled growth of SCG. Starting from a basic concept of the substrate effect on realizing SCG, this review covers the progress made in theoretical investigations on various carbon species during graphene growth on different transition metal substrates, in the STM study of the structural intermediates on transition metal surfaces, and in synthesizing graphene nanoribbons with atomic-precise width and edge structure, ending with a perspective on the future development of 2D materials beyond graphene.

  17. Switching and sensing spin states of co-porphyrin in bimolecular reactions on Au111 using scanning tunneling microscopy.

    Science.gov (United States)

    Kim, Howon; Chang, Yun Hee; Lee, Soon-Hyeong; Kim, Yong-Hyun; Kahng, Se-Jong

    2013-10-22

    Controlling and sensing spin states of magnetic molecules at the single-molecule level is essential for spintronic molecular device applications. Here, we demonstrate that spin states of Co-porphyrin on Au(111) can be reversibly switched over by binding and unbinding of the NO molecule and can be sensed using scanning tunneling microscopy and spectroscopy (STM and STS). Before NO exposure, Co-porphryin showed a clear zero-bias peak, a signature of Kondo effect in STS, whereas after NO exposures, it formed a molecular complex, NO-Co-porphyrin, that did not show any zero-bias feature, implying that the Kondo effect was switched off by binding of NO. The Kondo effect could be switched back on by unbinding of NO through single-molecule manipulation or thermal desorption. Our density functional theory calculation results explain the observations with pairing of unpaired spins in dz(2) and ppπ* orbitals of Co-porphyrin and NO, respectively. Our study opens up ways to control molecular spin state and Kondo effect by means of enormous variety of bimolecular binding and unbinding reactions on metallic surfaces.

  18. In situ scanning tunneling microscopy study of Ca-modified rutile TiO2(110 in bulk water

    Directory of Open Access Journals (Sweden)

    Giulia Serrano

    2015-02-01

    Full Text Available Despite the rising technological interest in the use of calcium-modified TiO2 surfaces in biomedical implants, the Ca/TiO2 interface has not been studied in an aqueous environment. This investigation is the first report on the use of in situ scanning tunneling microscopy (STM to study calcium-modified rutile TiO2(110 surfaces immersed in high purity water. The TiO2 surface was prepared under ultrahigh vacuum (UHV with repeated sputtering/annealing cycles. Low energy electron diffraction (LEED analysis shows a pattern typical for the surface segregation of calcium, which is present as an impurity on the TiO2 bulk. In situ STM images of the surface in bulk water exhibit one-dimensional rows of segregated calcium regularly aligned with the [001] crystal direction. The in situ-characterized morphology and structure of this Ca-modified TiO2 surface are discussed and compared with UHV-STM results from the literature. Prolonged immersion (two days in the liquid leads to degradation of the overlayer, resulting in a disordered surface. X-ray photoelectron spectroscopy, performed after immersion in water, confirms the presence of calcium.

  19. Direct observation of hopping induced spin polarization current in oxygen deficient Co-doped ZnO by Andreev reflection technique

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Kung-Shang; Huang, Tzu-Yu; Dwivedi, G.D. [Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan (China); Lin, Lu-Kuei; Lee, Shang-Fan [Taiwan Institute of Physics, Academia Sinica, Taipei, Taiwan (China); Sun, Shih-Jye [Department of Applied Physics, National Kaohsiung University, Kaohsiung, Taiwan (China); Chou, Hsiung, E-mail: hchou@mail.nsysu.edu.tw [Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan (China)

    2017-07-01

    Highlights: • Co-doped ZnO thin-films were grown with varying V{sub O} concentartion. • PCAR measurements were done to study the SPC. • High spin polarization was observed above a certain V{sub O} concentartion. • High V{sub O} samples provide a high density of completed percolation path. • This complete percolation path gives rise to high SPC. - Abstract: Oxygen vacancy induced ferromagnetic coupling in diluted magnetic oxide (DMO) semiconductors have been reported in several studies, but technologically more crucial spin-polarized current (SPC) is still under-developed in DMOs. Few studies have claimed that VRH mechanism can originate the SPC, but, how VRH mechanism associated with percolation path, is not clearly understood. We used Point-contact Andreev reflection (PCAR) technique to probe the SPC in Co-doped ZnO (CZO) films. Since the high resistance samples cause broadening in conductance(G)-voltage(V) curves, which may result in an unreliable evaluation of spin polarization, we include two extra parameters, (i) effective temperature and (ii) spreading resistance, for the simulation to avoid the uncertainty in extracting spin polarization. The effective G-V curves and higher spin polarization can be obtained above a certain oxygen vacancy concentration. The number of completed and fragmentary percolation paths is proportional to the concentration of oxygen vacancies. For low oxygen vacancy samples, the Pb-tip has a higher probability of covering fragmentary percolation paths than the complete ones, due to its small contact size. The completed paths may remain independent of one another and get polarized in different directions, resulting in lower spin-polarization value. High oxygen vacancy samples provide a high density of completed path, most of them link to one another by crossing over, and gives rise to high spin-polarization value.

  20. The importance of Fe surface states for spintronic devices based on magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Chantis, Athanasios N [Los Alamos National Laboratory

    2008-01-01

    In this article we give a review of our recent theoretical studies of the influence of Fe(001) surface (interface) states on spin-polarized electron transport across magnetic tunnel junctions with Fe electrodes. We show that minority-spin surface (interface) states are responsible for at least two effects which are important for spin electronics. First, they can produce a sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single Fe electrode. The effect is driven by a Rashba shift of the resonant surface band when the magnetization changes direction. This can introduce a new class of spintronic devices, namely, tunneling magnetoresistance junctions with a single ferromagnetic electrode. Second, in Fe/GaAs(001) magnetic tunnel junctions minority-spin interface states produce a strong dependence of the tunneling current spin polarization on applied electrical bias. A dramatic sign reversal within a voltage range of just a few tenths of an eV is predicted. This explains the observed sign reversal of spin polarization in recent experiments of electrical spin injection in Fe/GaAs(001) and related reversal of tunneling magnetoresistance through vertical Fe/GaAs/Fe trilayers.

  1. Contact magnetoresistance of multilayered cobalt/copper nanostructures measured by scanning tunneling microscope

    Science.gov (United States)

    Morrow, Paul-Shane

    Giant magnetoresistance (GMR) is the change in resistance of a series of ferromagnetic/nonmagnetic (F/N) layers in an applied magnetic field. Due to its potential in magnetic sensing and data storage applications, GMR has been a topic of intense research since its discovery 20 years ago. When the source current is passed perpendicular to the planes (CPP geometry) of the F/N layers, wire- or column-shaped nanostructures are preferred over conventional planar films because their reduced lateral dimension results in a larger resistance, allowing measurements at room temperature. F/N nanostructures previously implemented to exhibit CPP-GMR require extensive postdeposition modifications, specialized substrates, or use microfabrication techniques that are not vacuum-based. For the first time oblique angle deposition (OAD) is used to create a new F/N system that exhibits CPP-GMR at room temperature. OAD is a long-known physical vapor deposition technique in which nanostructure growth is achieved through a shadowing effect that occurs when the substrate is tilted to highly glancing angles relative to the incident flux. The samples grown for this study are slanted or vertical multilayered Co/Cu nanocolumns deposited by dual source thermal evaporation. For the vertical columns, the Co and Cu layer thicknesses tl were equal with t l = 4 nm and the bilayer number M = 34, while for the slanted nanocolumns tl = 4, 7, and 16 nm, with bilayer number M = 50, 42, and 21, respectively. The physical structure of these nanocolumns was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and electron energy-loss spectroscopy (EELS). The vertical columns had larger diameter (˜100 nm) and showed more branching on their outer surface due to the substrate rotation. The slanted columns had a smaller diameter (˜50 nm), possessed a smoother exterior surface, and showed a clear multilayered Co/Cu structure from EELS imaging. X-ray diffraction (XRD) pole

  2. Spin-polarized relativistic linear-muffin-tin-orbital method: Volume-dependent electronic structure and magnetic moment of plutonium

    International Nuclear Information System (INIS)

    Solovyev, I.V.; Liechtenstein, A.I.; Gubanov, V.A.; Antropov, V.P.; Andersen, O.K.

    1991-01-01

    The linear-muffin-tin-orbital method is generalized to the case of relativistic and spin-polarized self-consistent band calculations. Our formalism is analogous to the standard orthogonal--linear-muffin-tin-orbital formalism, except that the potential functions and the potential parameters are now matrices. The method is used to perform density-functional calculations for fcc plutonium with different atomic volumes. The formation of spin and orbital magnetic moments, as well as the changes in the energy bands for volume changes corresponding to the α-δ transition, are investigated. The calculated magnetic moments agree quite well with the experimental ones

  3. High Pressure Scanning Tunneling Microscopy Studies of Adsorbate Structure and Mobility during Catalytic Reactions. Novel Design of an Ultra High Pressure, High Temperature Scanning Tunneling Microscope System for Probing Catalytic Conversions

    International Nuclear Information System (INIS)

    Tang, David Chi-Wai

    2005-01-01

    The aim of the work presented therein is to take advantage of scanning tunneling microscope's (STM) capability for operation under a variety of environments under real time and at atomic resolution to monitor adsorbate structures and mobility under high pressures, as well as to design a new generation of STM systems that allow imaging in situ at both higher pressures (35 atm) and temperatures (350 C). The design of a high pressure, high temperature scanning tunneling microscope system, that is capable of monitoring reactions in situ at conditions from UHV and ambient temperature up to 1 atm and 250 C, is briefly presented along with vibrational and thermal analysis, as this system serves as a template to improve upon during the design of the new ultra high pressure, high temperature STM. Using this existing high pressure scanning tunneling microscope we monitored the co-adsorption of hydrogen, ethylene and carbon dioxide on platinum (111) and rhodium (111) crystal faces in the mTorr pressure range at 300 K in equilibrium with the gas phase. During the catalytic hydrogenation of ethylene to ethane in the absence of CO the metal surfaces are covered by an adsorbate layer that is very mobile on the time scale of STM imaging. We found that the addition of CO poisons the hydrogenation reaction and induces ordered structures on the single crystal surfaces. Several ordered structures were observed upon CO addition to the surfaces pre-covered with hydrogen and ethylene: a rotated (√19 x √19)R23.4 o on Pt(111), and domains of c(4 x 2)-CO+C 2 H 3 , previously unobserved (4 x 2)-CO+3C 2 H 3 , and (2 x 2)-3CO on Rh(111). A mechanism for CO poisoning of ethylene hydrogenation on the metal single crystals was proposed, in which CO blocks surface metal sites and reduces adsorbate mobility to limit adsorption and reaction rate of ethylene and hydrogen. In order to observe heterogeneous catalytic reactions that occur well above ambient pressure and temperature that more closely

  4. Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

    Directory of Open Access Journals (Sweden)

    Ahmed Kenawy

    2017-05-01

    Full Text Available The effect of molecular vibrations on the tunnel magnetoresistance (TMR of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at the same time to the charge of tunneling electrons and to the spin of the molecule, the spin anisotropy of such a molecule becomes enhanced. This has, in turn, a profound impact on the TMR of such a device showing that molecular vibrations lead to a significant change of spin-polarized transport, differing for the parallel and antiparallel magnetic configuration of the junction.

  5. Circular polarization in a non-magnetic resonant tunneling device

    Directory of Open Access Journals (Sweden)

    Airey Robert

    2011-01-01

    Full Text Available Abstract We have investigated the polarization-resolved photoluminescence (PL in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW PL presents strong circular polarization (values up to -70% at 19 T. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

  6. Scanning Tunneling Microscopy and Theoretical Study of Water Adsorption on Fe3O4: Implications for Catalysis

    Energy Technology Data Exchange (ETDEWEB)

    Rim, Kwang T.; Eom, Daejin; Chan, Siu-Wai; Flytzani-Stephanopoulos, Maria; Flynn, George; Wen, Xiaodong; Batista, Enrique R.

    2012-10-23

    The reduced surface of a natural Hematite single crystal a-Fe2O3(0001) sample has multiple surface domains with di!erent terminations, Fe2O3(0001), FeO(111), and Fe3O4(111). The adsorption of water on this surface was investigated via Scanning Tunneling Microscopy (STM) and first-principle theoretical simulations. Water species are observed only on the Fe-terminated Fe3O4(111) surface at temperatures up to 235 K. Between 235 and 245 K we observed a change in the surface species from intact water molecules and hydroxyl groups bound to the surface to only hydroxyl groups atop the surface terminating FeIII cations. This indicates a low energy barrier for water dissociation on the surface of Fe3O4 that is supported by our theoretical computations. Our first principles simulations con"rm the identity of the surface species proposed from the STM images, finding that the most stable state of a water molecule is the dissociated one (OH + H), with OH atop surface terminating FeIII sites and H atop under-coordinated oxygen sites. Attempts to simulate reaction of the surface OH with coadsorbed CO fail because the only binding sites for CO are the surface FeIII atoms, which are blocked by the much more strongly bound OH. In order to promote this reaction we simulated a surface decorated with gold atoms. The Au adatoms are found to cap the under-coordinated oxygen sites and dosed CO is found to bind to the Au adatom. This newly created binding site for CO not only allows for coexistence of CO and OH on the surface of Fe3O4 but also provides colocation between the two species. These two factors are likely promoters of catalytic activity on Au/Fe3O4(111) surfaces.

  7. Resistivity of thin gold films on mica induced by electron-surface scattering: Application of quantitative scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Robles, Marcelo E.; Gonzalez-Fuentes, Claudio A.; Henriquez, Ricardo; Kremer, German; Moraga, Luis; Oyarzun, Simón; Suarez, Marco Antonio; Flores, Marcos; Munoz, Raul C.

    2012-01-01

    We report a comparison between the resistivity measured on thin gold films deposited on mica, with predictions based upon classical theories of size effects (Drude's, Sondheimer's and Calecki's), as well as predictions based upon quantum theories of electron-surface scattering (the modified theory of Sheng, Xing and Wang, the theory of Tesanovic, Jaric and Maekawa, and that of Trivedi and Aschroft). From topographic images of the surface recorded with a Scanning Tunneling Microscope, we determined the rms roughness amplitude, δ and the lateral correlation length, ξ corresponding to a Gaussian representation of the average height-height autocorrelation function, describing the roughness of each sample in the scale of length set by the Fermi wave length. Using (δ, ξ) as input data, we present a rigorous comparison between resistivity data and predictions based upon the theory of Calecki as well as quantum theoretical predictions without adjustable parameters. The resistivity was measured on gold films of different thickness evaporated onto mica substrates, between 4 K and 300 K. The resistivity data covers the range 0.1 < x(T) < 6.8, for 4 K < T < 300 K, where x(T) is the ratio between film thickness and electron mean free path in the bulk at temperature T. We experimentally identify electron-surface and electron-phonon scattering as the microscopic electron scattering mechanisms giving rise to the macroscopic resistivity. The different theories are all capable of estimating the thin film resistivity to an accuracy better than 10%; however the mean free path and the resistivity characterizing the bulk turn out to depend on film thickness. Surprisingly, only the Sondheimer theory and its quantum version, the modified theory of Sheng, Xing and Wang, predict and increase in resistivity induced by size effects that seems consistent with published galvanomagnetic phenomena also arising from electron-surface scattering measured at low temperatures.

  8. The nucleation and growth of uranium on the basal plane of graphite studied by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Tench, R.J.

    1992-11-01

    For the first time, nanometer scale uranium clusters were created on the basal plane of highly oriented pyrolytic graphite by laser ablation under ultra-high vacuum conditions. The physical and chemical properties of these clusters were investigated by scanning tunneling microscopy (STM) as well as standard surface science techniques. Auger electron and X-ray photoelectron spectroscopies found the uranium deposit to be free of contamination and showed that no carbide had formed with the underlying graphite. Clusters with sizes ranging from 42 Angstrom 2 to 630 Angstrom 2 were observed upon initial room temperature deposition. Surface diffusion of uranium was observed after annealing the substrate above 800 K, as evidenced by the decreased number density and the increased size of the clusters. Preferential depletion of clusters on terraces near step edges as a result of annealing was observed. The activation energy for diffusion deduced from these measurements was found to be 15 Kcal/mole. Novel formation of ordered uranium thin films was observed for coverages greater than two monolayers after annealing above 900 K. These ordered films displayed islands with hexagonally faceted edges rising in uniform step heights characteristic of the unit cell of the P-phase of uranium. In addition, atomic resolution STM images of these ordered films indicated the formation of the β-phase of uranium. The chemical properties of these surfaces were investigated and it was shown that these uranium films had a reduced oxidation rate in air as compared to bulk metal and that STM imaging in air induced a polarity-dependent enhancement of the oxidation rate

  9. Growth of nanocrystalline MoO3 on Au(111) studied by in situ scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Biener, Monika M.; Biener, Juergen; Schalek, Richard; Friend, Cynthia M.

    2004-01-01

    The growth of nanocrystalline MoO 3 islands on Au(111) using physical vapor deposition of Mo has been studied by scanning tunneling microscopy and low energy electron diffraction. The growth conditions affect the shape and distribution of the MoO 3 nanostructures, providing a means of preparing materials with different percentages of edge sites that may have different chemical and physical properties than atoms in the interior of the nanostructures. MoO 3 islands were prepared by physical vapor deposition of Mo and subsequent oxidation by NO 2 exposure at temperatures between 450 K and 600 K. They exhibit a crystalline structure with a c(4x2) periodicity relative to unreconstructed Au(111). While the atomic-scale structure is identical to that of MoO 3 islands prepared by chemical vapor deposition, we demonstrate that the distribution of MoO 3 islands on the Au(111) surface reflects the distribution of Mo clusters prior to oxidation although the growth of MoO 3 involves long-range mass transport via volatile MoO 3 precursor species. The island morphology is kinetically controlled at 450 K, whereas an equilibrium shape is approached at higher preparation temperatures or after prolonged annealing at the elevated temperature. Mo deposition at or above 525 K leads to the formation of a Mo-Au surface alloy as indicated by the observation of embedded MoO 3 islands after oxidation by NO 2 . Au vacancy islands, formed when Mo and Au dealloy to produce vacancies, are observed for these growth conditions

  10. Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires; Aufbau einer Vierspitzen-Rastertunnelmikroskop/Rasterelektronenmikroskop-Kombination und Leitfaehigkeitsmessungen an Silizid Nanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, Evgeniy

    2013-09-01

    In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

  11. Influence of doping admixture and anisotropic tension on behaviour of muon spin polarization in insulators

    International Nuclear Information System (INIS)

    Gorelkin, V.N.; Rubtsov, D.V.

    1997-01-01

    We investigate the model describing a muon tunneling between two equivalent positions in (magnetic) insulators. Crystals are assumed to have concentrations such that the muon tunneling states in a double well potential can be considered as real during the muon lifetime τ μ . In the simplest model there are only two such states: the ground state and the first excited state. Our aim is to calculate lifetimes τ 1 (T) and τ 0 (T) of these muon tunneling states resulting from interaction between the muon and phonons of the sample. In the case of a distorted double well potential, all matrix elements of H-circumflex (ph) int are finite. This leads to rescaling of the first and second orders of the perturbation theory compared with the results for the muon in 'pure' samples. We explain the vanishing of some part of the oscillation frequencies of the muon polarization vector in the framework of a muon-phonon interaction model: for example, it is necessary to take into account that τ 1 (T) decreases more rapidly than τ 0 (T) when the temperature increases. If the muon tunnels through a set of equivalent interstitial positions in a unit cell, the experimental picture of the polarization vector behaviour can change drastically under the action of various strain fields

  12. Simple and efficient method of spin-polarizing a metastable helium beam by diode laser optical pumping

    International Nuclear Information System (INIS)

    Granitza, B.; Salvietti, M.; Torello, E.; Mattera, L.; Sasso, A.

    1995-01-01

    Diode laser optical pumping to produce a highly spin-polarized metastable He beam to be used in a spin-polarized metastable atom deexcitation spectroscopy experiment on magnetized surfaces is described. Efficient pumping of the beam is performed by means of an SDL-6702 distributed Bragg reflector diode laser which yields 50 mW of output power in a single longitudinal mode at 1083 nm, the resonance wavelength for the 2 3 S→2 3 P 0,1,2 (D 0 , D 1 , and D 2 ) transitions of He*. The light is circularly polarized by a quarter-wave plate, allowing easy change of the sense of atomic polarization. The laser frequency can be locked to the atomic transition for several hours by phase-sensitive detection of the saturated absorption signal in a He discharge cell. Any of the three transitions of the triplet system can be pumped with the laser but the maximum level of atomic polarization of 98.5% is found pumping the D 2 line. copyright 1995 American Institute of Physics

  13. New-type spin polarized electron source and its applications; Atarashii spin henkyoku denshi sengen to sono oyo

    Energy Technology Data Exchange (ETDEWEB)

    Saka, T.; Kato, T. [Daido Steel Co. Ltd., Nagoya (Japan); Nakanishi, T.; Okumi, S. [Nagoya University, Nagoya (Japan); Horinaka, H. [Osaka Prefectural University, Osaka (Japan). College of Engineering

    1998-08-20

    This paper reveals that using distorted thin GaAs film can realize high polarization in spin polarized electron ray, and introduces properties of the developed ray source. The paper also touches on the application thereof to property physics. Realization of the high spin polarization is based on use of the `optical polarization method`. With this method, electrons in specific spin state are excited into a conduction band by utilizing the selection law used when valency electrons of zincblende type crystal such as GaAs absorb circular polarization. These electrons are taken out into vacuum and used as polarized electron beams. In order to realize uniformly distorted GaAs film, a method was discussed, with which the thin GaAs films are grown on substrates with different lattice constants, and the films are distorted by means of lattice mismatch. GaAs(1-x)Px was used for the substrates. GaAs(1-x)Px has the lattice constant decrease as the P`s mixed crystal ratio `x` increases. If a thin GaAs film is grown on this substrate, it is possible to obtain GaAs which is subjected to compression stress in the direction parallel with the growing surface, and tensile stress in the vertical direction. 13 refs., 5 figs., 1 tab.

  14. Spin polarization, orbital occupation and band gap opening in vanadium dioxide: The effect of screened Hartree-Fock exchange

    KAUST Repository

    Wang, Hao

    2014-07-01

    The metal-insulator transition of VO2 so far has evaded an accurate description by density functional theory. The screened hybrid functional of Heyd, Scuseria and Ernzerhof leads to reasonable solutions for both the low-temperature monoclinic and high-temperature rutile phases only if spin polarization is excluded from the calculations. We explore whether a satisfactory agreement with experiment can be achieved by tuning the fraction of Hartree Fock exchange (α) in the density functional. It is found that two branches of locally stable solutions exist for the rutile phase for 12.5%≤α≤20%. One is metallic and has the correct stability as compared to the monoclinic phase, the other is insulating with lower energy than the metallic branch. We discuss these observations based on the V 3d orbital occupations and conclude that α=10% is the best possible choice for spin-polarized VO2 calculations. © 2014 Elsevier B.V. All rights reserved.

  15. Scanning Tunneling Microscopy

    Science.gov (United States)

    1992-03-17

    the study of surfact strain. A variety of studies were conducted on Au(in air) CdTe (in air), Hg1-xMnxTe (under glycerin), and Hg 1-xCdx Te (in air...HgCdTe and CdMnTe. (7) Scribing of adjacent parallel lines on the HgCdTe and CdMnTe surfaces. (8) Identification of a new c(4x6) reconstruction on some...tihodoluminescence spectroscopy, coupled with pulsed laser annealing-to reveal systematics between interface chemical and electronic structure. The

  16. Tunneling magnetoresistance in junctions composed of ferromagnets and time-reversal invariant topological superconductors

    International Nuclear Information System (INIS)

    Yan, Zhongbo; Wan, Shaolong

    2016-01-01

    Tunneling magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal invariant topological superconductors without spin-rotation symmetry. Here the physical origin is that when the spin-polarization direction of an injected electron from the ferromagnet lies in the same plane of the spin-polarization direction of Majorana zero modes, the electron will undergo a perfect spin-equal Andreev reflection, while injected electrons with other spin-polarization directions will be partially Andreev reflected and partially normal reflected, which consequently has a lower conductance, and therefore, the magnetoresistance effect emerges. Compared to conventional magnetic tunnel junctions, an unprecedented advantage of the junctions studied here is that arbitrary high tunneling magnetoresistance can be obtained even when the magnetization of the ferromagnets are weak and the insulating tunneling barriers are featureless. Our findings provide a new fascinating mechanism to obtain high tunneling magnetoresistance. (paper)

  17. Spin-dependent tunneling transport in a lateral magnetic diode

    International Nuclear Information System (INIS)

    Wang, Yu; Shi, Ying

    2012-01-01

    Based on the gate-tunable two-dimensional electron gas, we have constructed laterally a double-barrier resonant tunneling structure by employing a peculiar triple-gate configuration, namely a ferromagnetic gate sandwiched closely by a pair of Schottky gates. Because of the in-plane stray field of ferromagnetic gate, the resulting bound spin state in well gives rise to the remarkable resonant spin polarization following the spin-dependent resonant tunneling regime. Importantly, by aligning the bound spin state through surface gate-voltage configuration, this resonant spin polarization can be externally manipulated, showing the desirable features for the spin-logic device applications. -- Highlights: ► A lateral spin-RTD was proposed by applying triple-gate modulated 2DEG. ► Spin-dependent resonant tunneling transport and large resonant spin polarization has been clarified from the systematic simulation. ► Both electric and/or magnetic strategies can be employed to modulate the system spin transport, providing the essential features for the spin-logic application.

  18. Effect of Rashba and Dresselhaus Spin-Orbit Couplings on Electron Spin Polarization in a Hybrid Magnetic-Electric Barrier Nanostructure

    Science.gov (United States)

    Yang, Shi-Peng; Lu, Mao-Wang; Huang, Xin-Hong; Tang, Qiang; Zhou, Yong-Long

    2017-04-01

    A theoretical study has been carried out on the spin-dependent electron transport in a hybrid magnetic-electric barrier nanostructure with both Rashba and Dresselhaus spin-orbit couplings, which can be experimentally realized by depositing a ferromagnetic strip and a Schottky metal strip on top of a semiconductor heterostructure. The spin-orbit coupling-dependent transmission coefficient, conductance, and spin polarization are calculated by solving the Schrödinger equation exactly with the help of the transfer-matrix method. We find that both the magnitude and sign of the electron spin polarization vary strongly with the spin-orbit coupling strength. Thus, the degree of electron spin polarization can be manipulated by properly adjusting the spin-orbit coupling strength, and such a nanosystem can be employed as a controllable spin filter for spintronics applications.

  19. The effects of Rashba spin-orbit coupling on spin-polarized transport in hexagonal graphene nano-rings and flakes

    Science.gov (United States)

    Laghaei, M.; Heidari Semiromi, E.

    2018-03-01

    Quantum transport properties and spin polarization in hexagonal graphene nanostructures with zigzag edges and different sizes were investigated in the presence of Rashba spin-orbit interaction (RSOI). The nanostructure was considered as a channel to which two semi-infinite armchair graphene nanoribbons were coupled as input and output leads. Spin transmission and spin polarization in x, y, and z directions were calculated through applying Landauer-Buttiker formalism with tight binding model and the Green's function to the system. In these quantum structures it is shown that changing the size of system, induce and control the spin polarized currents. In short, these graphene systems are typical candidates for electrical spintronic devices as spin filtering.

  20. Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Wang, L.M.; Guo, C.-C.

    2005-01-01

    The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure