Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

Science.gov (United States)

Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

2018-01-01

Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

Resonant tunneling of spin-wave packets via quantized states in potential wells.

Science.gov (United States)

Hansen, Ulf-Hendrik; Gatzen, Marius; Demidov, Vladislav E; Demokritov, Sergej O

2007-09-21

We have studied the tunneling of spin-wave pulses through a system of two closely situated potential barriers. The barriers represent two areas of inhomogeneity of the static magnetic field, where the existence of spin waves is forbidden. We show that for certain values of the spin-wave frequency corresponding to the quantized spin-wave states existing in the well formed between the barriers, the tunneling has a resonant character. As a result, transmission of spin-wave packets through the double-barrier structure is much more efficient than the sequent tunneling through two single barriers.

Spin-dependent tunnelling in magnetic tunnel junctions

International Nuclear Information System (INIS)

Tsymbal, Evgeny Y; Mryasov, Oleg N; LeClair, Patrick R

2003-01-01

The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)

Electron spin resonance scanning tunneling microscope

International Nuclear Information System (INIS)

Guo Yang; Li Jianmei; Lu Xinghua

2015-01-01

It is highly expected that the future informatics will be based on the spins of individual electrons. The development of elementary information unit will eventually leads to novel single-molecule or single-atom devices based on electron spins; the quantum computer in the future can be constructed with single electron spins as the basic quantum bits. However, it is still a great challenge in detection and manipulation of a single electron spin, as well as its coherence and entanglement. As an ideal experimental tool for such tasks, the development of electron spin resonance scanning tunneling microscope (ESR-STM) has attracted great attention for decades. This paper briefly introduces the basic concept of ESR-STM. The development history of this instrument and recent progresses are reviewed. The underlying mechanism is explored and summarized. The challenges and possible solutions are discussed. Finally, the prospect of future direction and applications are presented. (authors)

Anomalous spin-dependent tunneling statistics in Fe/MgO/Fe junctions induced by disorder at the interface

Science.gov (United States)

Yan, Jiawei; Wang, Shizhuo; Xia, Ke; Ke, Youqi

2018-01-01

We present first-principles analysis of interfacial disorder effects on spin-dependent tunneling statistics in thin Fe/MgO/Fe magnetic tunnel junctions. We find that interfacial disorder scattering can significantly modulate the tunneling statistics in the minority spin of the parallel configuration (PC) while all other spin channels remain dominated by the Poissonian process. For the minority-spin channel of PC, interfacial disorder scattering favors the formation of resonant tunneling channels by lifting the limitation of symmetry conservation at low concentration, presenting an important sub-Poissonian process in PC, but is destructive to the open channels at high concentration. We find that the important modulation of tunneling statistics is independent of the type of interfacial disorder. A bimodal distribution function of transmission with disorder dependence is introduced and fits very well our first-principles results. The increase of MgO thickness can quickly change the tunneling from a sub-Poissonian to Poissonian dominated process in the minority spin of PC with disorder. Our results provide a sensitive detection method of an ultralow concentration of interfacial defects.

Parameter dependence of resonant spin torque magnetization reversal

International Nuclear Information System (INIS)

Fricke, L.; Serrano-Guisan, S.; Schumacher, H.W.

2012-01-01

We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.

Parameter dependence of resonant spin torque magnetization reversal

Science.gov (United States)

Fricke, L.; Serrano-Guisan, S.; Schumacher, H. W.

2012-04-01

We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunneling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The precessional ST dynamics of the single domain MTJ free layer cell are modeled in the macro spin approximation. The energy efficiency, reversal time, and reversal reliability are investigated under variation of pulse parameters like direct and AC current amplitude, AC frequency and AC phase. We find a range of AC and direct current amplitudes where robust resonant ST reversal is obtained with faster switching time and reduced energy consumption per pulse compared to purely direct current ST reversal. However, for a certain range of AC and direct current amplitudes a strong dependence of the reversal properties on AC frequency and phase is found. Such regions of unreliable reversal must be avoided for ST memory applications.

Quantum Entanglement of a Tunneling Spin with Mechanical Modes of a Torsional Resonator

Directory of Open Access Journals (Sweden)

D. A. Garanin

2011-08-01

Full Text Available We solve the Schrödinger equation for various quantum regimes describing a tunneling macrospin coupled to a torsional oscillator. The energy spectrum and freezing of spin tunneling are studied. Magnetic susceptibility, noise spectrum, and decoherence due to entanglement of spin and mechanical modes are computed. We show that the presence of a tunneling spin can be detected via splitting of the mechanical mode at the resonance. Our results apply to experiments with magnetic molecules coupled to nanoresonators.

Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

Directory of Open Access Journals (Sweden)

Fen Liu

2016-08-01

Full Text Available Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsic properties.

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-01-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact

Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution.

Science.gov (United States)

Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland

2010-07-23

We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.

Vector spin modeling for magnetic tunnel junctions with voltage dependent effects

International Nuclear Information System (INIS)

Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A.

2014-01-01

Integration and co-design of CMOS and spin transfer devices requires accurate vector spin conduction modeling of magnetic tunnel junction (MTJ) devices. A physically realistic model of the MTJ should comprehend the spin torque dynamics of nanomagnet interacting with an injected vector spin current and the voltage dependent spin torque. Vector spin modeling allows for calculation of 3 component spin currents and potentials along with the charge currents/potentials in non-collinear magnetic systems. Here, we show 4-component vector spin conduction modeling of magnetic tunnel junction devices coupled with spin transfer torque in the nanomagnet. Nanomagnet dynamics, voltage dependent spin transport, and thermal noise are comprehended in a self-consistent fashion. We show comparison of the model with experimental magnetoresistance (MR) of MTJs and voltage degradation of MR with voltage. Proposed model enables MTJ circuit design that comprehends voltage dependent spin torque effects, switching error rates, spin degradation, and back hopping effects

Theory of spin-dependent tunnelling in magnetic junctions

International Nuclear Information System (INIS)

Mathon, J.

2002-01-01

Rigorous theory of the tunnelling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is described. It is first applied to calculate the TMR of two Co electrodes separated by a vacuum gap. The calculated TMR ratio reaches ∼65% in the tunnelling regime but can be as high as 280% in the metallic regime when the vacuum gap is of the order of the Co interatomic distance (abrupt domain wall). It is also shown that the spin polarization P of the tunnelling current is negative in the metallic regime but becomes positive P∼35% in the tunnelling regime. Calculation of the TMR of an epitaxial Fe/MgO/Fe(001) junction is also described. The calculated optimistic TMR ratio is in excess of 1000% for an MgO barrier of ∼20 atomic planes and the spin polarization of the tunnelling current is positive for all MgO thicknesses. It is also found that spin-dependent tunnelling in an Fe/MgO/Fe(001) junction is not entirely determined by states at the Γ point (k parallel = 0) even for MgO thicknesses as large as ∼20 atomic planes. Finally, it is demonstrated that the TMR ratio calculated from the Kubo formula remains non-zero when one of the Co electrodes is covered with a copper layer. It is shown that non-zero TMR is due to quantum well states in the Cu layer which do not participate in transport. Since these only occur in the down-spin channel, their loss from transport creates a spin asymmetry of electrons tunnelling from a Cu interlayer, i.e. non-zero TMR. Numerical modelling is used to show that diffuse scattering from a random distribution of impurities in the barrier may cause quantum well states to evolve into propagating states, in which case the spin asymmetry of the non-magnetic layer is lost and with it the TMR. (author)

Resonant tunnel magnetoresistance in a double magnetic tunnel junction

KAUST Repository

Useinov, Arthur

2011-08-09

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

Laser-assisted spin-polarized transport in graphene tunnel junctions

International Nuclear Information System (INIS)

Ding Kaihe; Zhu Zhengang; Berakdar, Jamal

2012-01-01

The Keldysh nonequilibrium Green’s function method is utilized to theoretically study spin-polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi-photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discuss the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependences of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance, and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency. (paper)

Spin-dependent tunnelling at infrared frequencies: magnetorefractive effect in magnetic nanocomposites

International Nuclear Information System (INIS)

Granovsky, A.B.; Inoue, Mitsuteru

2004-01-01

We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling

Spin-dependent tunnelling at infrared frequencies: magnetorefractive effect in magnetic nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Granovsky, A.B. E-mail: granov@magn.ru; Inoue, Mitsuteru

2004-05-01

We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling.

Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

Science.gov (United States)

Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

2013-08-27

Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien

2012-08-09

Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

Science.gov (United States)

Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

2012-11-01

Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.

Time-dependent resonant tunnelling for parallel-coupled double quantum dots

International Nuclear Information System (INIS)

Dong Bing; Djuric, Ivana; Cui, H L; Lei, X L

2004-01-01

We derive the quantum rate equations for an Aharonov-Bohm interferometer with two vertically coupled quantum dots embedded in each of two arms by means of the nonequilibrium Green function in the sequential tunnelling regime. Based on these equations, we investigate time-dependent resonant tunnelling under a small amplitude irradiation and find that the resonant photon-assisted tunnelling peaks in photocurrent demonstrate a combination behaviour of Fano and Lorentzian resonances due to the interference effect between the two pathways in this parallel configuration, which is controllable by threading the magnetic flux inside this device

Spin-dependent transport in metal/semiconductor tunnel junctions

NARCIS (Netherlands)

Prins, M.W.J.; Kempen, van H.; Leuken, Van H.; Groot, de R.A.; Roy, van W.; De Boeck, J.

1995-01-01

This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to

Spin transport in spin filtering magnetic tunneling junctions.

Science.gov (United States)

Li, Yun; Lee, Eok Kyun

2007-11-01

Taking into account spin-orbit coupling and s-d interaction, we investigate spin transport properties of the magnetic tunneling junctions with spin filtering barrier using Landauer-Büttiker formalism implemented with the recursive algorithm to calculate the real-space Green function. We predict completely different bias dependence of negative tunnel magnetoresistance (TMR) between the systems composed of nonmagnetic electrode (NM)/ferromagnetic barrier (FB)/ferromagnet (FM) and NM/FB/FM/NM spin filtering tunnel junctions (SFTJs). Analyses of the results provide us possible ways of designing the systems which modulate the TMR in the negative magnetoresistance regime.

Generation of constant-amplitude radio-frequency sweeps at a tunnel junction for spin resonance STM

International Nuclear Information System (INIS)

Paul, William; Lutz, Christopher P.; Heinrich, Andreas J.; Baumann, Susanne

2016-01-01

We describe the measurement and successful compensation of the radio-frequency transfer function of a scanning tunneling microscope over a wide frequency range (15.5–35.5 GHz) and with high dynamic range (>50 dB). The precise compensation of cabling resonances and attenuations is critical for the production of constant-voltage frequency sweeps for electric-field driven electron spin resonance (ESR) experiments. We also demonstrate that a well-calibrated tunnel junction voltage is necessary to avoid spurious ESR peaks that can arise due to a non-flat transfer function.

Generation of constant-amplitude radio-frequency sweeps at a tunnel junction for spin resonance STM

Energy Technology Data Exchange (ETDEWEB)

Paul, William; Lutz, Christopher P.; Heinrich, Andreas J. [IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Baumann, Susanne [IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

2016-07-15

We describe the measurement and successful compensation of the radio-frequency transfer function of a scanning tunneling microscope over a wide frequency range (15.5–35.5 GHz) and with high dynamic range (>50 dB). The precise compensation of cabling resonances and attenuations is critical for the production of constant-voltage frequency sweeps for electric-field driven electron spin resonance (ESR) experiments. We also demonstrate that a well-calibrated tunnel junction voltage is necessary to avoid spurious ESR peaks that can arise due to a non-flat transfer function.

Higher spins tunneling from a time dependent and spherically symmetric black hole

International Nuclear Information System (INIS)

Siahaan, Haryanto M.

2016-01-01

The discussions of Hawking radiation via tunneling method have been performed extensively in the case of scalar particles. Moreover, there are also several works in discussing the tunneling method for Hawking radiation by using higher spins, e.g. neutrino, photon, and gravitino, in the background of static black holes. Interestingly, it is found that the Hawking temperature for static black holes using the higher spins particles has no difference compared to the one computed using scalars. In this paper, we study the Hawking radiation for a spherically symmetric and time dependent black holes using the tunneling of Dirac particles, photon, and gravitino. We find that the obtained Hawking temperature is similar to the one derived in the tunneling method by using scalars. (orig.)

Higher spins tunneling from a time dependent and spherically symmetric black hole

Energy Technology Data Exchange (ETDEWEB)

Siahaan, Haryanto M. [Parahyangan Catholic University, Physics Department, Bandung (Indonesia)

2016-03-15

The discussions of Hawking radiation via tunneling method have been performed extensively in the case of scalar particles. Moreover, there are also several works in discussing the tunneling method for Hawking radiation by using higher spins, e.g. neutrino, photon, and gravitino, in the background of static black holes. Interestingly, it is found that the Hawking temperature for static black holes using the higher spins particles has no difference compared to the one computed using scalars. In this paper, we study the Hawking radiation for a spherically symmetric and time dependent black holes using the tunneling of Dirac particles, photon, and gravitino. We find that the obtained Hawking temperature is similar to the one derived in the tunneling method by using scalars. (orig.)

Spin-dependent electronic transport characteristics in Fe4N/BiFeO3/Fe4N perpendicular magnetic tunnel junctions

Science.gov (United States)

Yin, Li; Wang, Xiaocha; Mi, Wenbo

2018-01-01

Perpendicular magnetic tunnel junctions (MTJs) have attracted increasing attention owing to the low energy consumption and wide application prospects. Herewith, against Julliere's formula, an inverse tunnel magnetoresistance (TMR) appears in tetragonal Fe4N/BiFeO3/Fe4N perpendicular MTJs, which is attributed to the binding between the interface resonant tunneling state and central (bordered) hot spots. Especially, antiferromagnetic BiFeO3 shows an extra spin-polarized resonant state in the barrier, which provides a magnetic-barrier factor to affect the tunneling transport in MTJs. Meanwhile, due to the spin-polarized transport in Fe4N/BiFeO3/Fe4N MTJs, the sign of TMR can be tuned by the applied bias. The tunable TMR and resonant magnetic barrier effect pave the way for clarifying the tunneling transport in other junctions and spintronic devices.

The temperature dependence of quantum spin pumping generated using electron spin resonance with three-magnon splittings

International Nuclear Information System (INIS)

Nakata, Kouki

2013-01-01

On the basis of the Schwinger–Keldysh formalism, we have closely investigated the temperature dependence of quantum spin pumping generated using electron spin resonance. We have clarified that three-magnon splittings excite non-zero modes of magnons and characterize the temperature dependence of quantum spin pumping generated using electron spin resonance. (paper)

Concept for room temperature single-spin tunneling force microscopy with atomic spatial resolution

Science.gov (United States)

Payne, Adam

A study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single electron tunneling between two electrically isolated paramagnetic states. Single-spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured atomic force microscopy (AFM) system noise. The results show that the approach could provide single-spin measurement of electrically isolated defect states with atomic spatial resolution at room temperature.

Abrupt relaxation in high-spin molecules

International Nuclear Information System (INIS)

Chang, C.-R.; Cheng, T.C.

2000-01-01

Mean-field model suggests that the rate of resonant quantum tunneling in high-spin molecules is not only field-dependent but also time-dependent. The relaxation-assisted resonant tunneling in high-spin molecules produces an abrupt magnetization change during relaxation. When the applied field is very close to the resonant field, a time-dependent interaction field gradually shifts the energies of different collective spin states, and magnetization tunneling is observed as two energies of the spin states coincide

Micromagnetic Design of Spin Dependent Tunnel Junctions for Optimized Sensing Performance

National Research Council Canada - National Science Library

Tondra, Mark; Daughton, James M; Nordman, Catherine; Wang, Dexin; Taylor, John

1999-01-01

Pinned Spin Dependent Tunneling (SDT) devices have been fabricated into high sensitivity magnetic field sensors with many favorable properties including high sensitivity (̃ 10 umOe / Hz @ 1 Hz and ̃ 100 nOe / Hz @ > 10 kHz...

Tunneling Anomalous and Spin Hall Effects.

Science.gov (United States)

Matos-Abiague, A; Fabian, J

2015-07-31

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

Magnetic reconstruction induced magnetoelectric coupling and spin-dependent tunneling in Ni/KNbO_3/Ni multiferroic tunnel junctions

International Nuclear Information System (INIS)

Zhang, Hu; Dai, Jian-Qing; Song, Yu-Min

2016-01-01

We investigate the magnetoelectric coupling and spin-polarized tunneling in Ni/KNbO_3/Ni multiferroic tunnel junctions with asymmetric interfaces based on density functional theory. The junctions have two stable polarization states. We predict a peculiar magnetoelectric effect in such junctions originating from the magnetic reconstruction of Ni near the KO-terminated interface. This reconstruction is induced by the reversal of the ferroelectric polarization of KNbO_3. Furthermore, the change in the magnetic ordering filters the spin-dependent current. This effect leads to a change in conductance by about two orders of magnitude. As a result we obtain a giant tunneling electroresistance effect. In addition, there exist sizable tunneling magnetoresistance effects for two polarization states. - Highlights: • We study the ME coupling and electron tunneling in Ni/KNbO_3/Ni junctions. • There is magnetic reconstruction of Ni atoms near the KO-terminated interface. • A peculiar magnetoelectric coupling effect is obtained. • Predicted giant tunneling electroresistance effects.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian

2014-12-08

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Spin-transfer torque in spin filter tunnel junctions

KAUST Repository

Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek

2014-01-01

Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

Edge-state-dependent tunneling of dipole-exchange spin waves in submicrometer magnetic strips with an air gap.

Science.gov (United States)

Xing, X J; Zhang, D; Li, S W

2012-12-14

We have investigated the tunneling of dipole-exchange spin waves across an air gap in submicrometer-sized permalloy magnetic strips by means of micromagnetic simulations. The magnetizations beside the gap could form three distinct end-domain states with various strengths of dipolar coupling. Spin-wave tunneling through the gap at individual end-domain states is studied. It is found that the tunneling behavior is strongly dependent on these domain states. Nonmonotonic decay of transmission of spin waves with the increase of the gap width is observed. The underlying mechanism for these behaviors is proposed. The tunneling characteristics of the dipole-exchange spin waves differ essentially from those of the magnetostatic ones reported previously.

Time-dependent transport in interacting and noninteracting resonant-tunneling systems

DEFF Research Database (Denmark)

Jauho, Antti-Pekka; Wingreen, Ned S.; Meir, Yigal

1994-01-01

noninteracting resonant-tunneling system are presented. Due to the coherence between the leads and the resonant site, the current does not follow the driving signal adiabatically: a ''ringing'' current is found as a response to a voltage pulse, and a complex time dependence results in the case of harmonic......We consider a mesoscopic region coupled to two leads under the influence of external time-dependent voltages. The time dependence is coupled to source and drain contacts, the gates controlling the tunnel-barrier heights, or to the gates that define the mesoscopic region. We derive, with the Keldysh...... nonequilibrium-Green-function technique, a formal expression for the fully nonlinear, time-dependent current through the system. The analysis admits arbitrary interactions in the mesoscopic region, but the leads are treated as noninteracting. For proportionate coupling to the leads, the time-averaged current...

Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts.

Science.gov (United States)

Song, Yipu; Schmitt, Andrew L; Jin, Song

2008-08-01

Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.

Circular polarization in a non-magnetic resonant tunneling device

Directory of Open Access Journals (Sweden)

Airey Robert

2011-01-01

Full Text Available Abstract We have investigated the polarization-resolved photoluminescence (PL in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW PL presents strong circular polarization (values up to -70% at 19 T. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

Q2 dependence of the spin structure function in the resonance region

International Nuclear Information System (INIS)

Li, Z.; Li, Z.

1994-01-01

In this paper, we show what we can learn from the CEBAF experiments on spin-structure functions, and the transition from the Drell-Hearn-Gerasimov sum rule in the real photon limit to the spin-dependent sum rules in deep inelastic scattering, and how the asymmetry A 1 (x,Q 2 ) approaches the scaling limit in the resonance region. The spin structure function in the resonance region alone cannot determine the spin-dependent sum rule due to the kinematic restriction of the resonance region. The integral ∫ 0 1 {A 1 (x,Q 2 )F 2 (x,Q 2 )/2x[1+R(x,Q 2 )]}dx is estimated from Q 2 =0--2.5 GeV 2 . The result shows that there is a region where both contributions from the baryon resonances and the deep inelastic scattering are important; thus it provides important information on the high twist effects on the spin-dependent sum rule

Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence

KAUST Repository

Manchon, Aurelien; Zhang, S.; Lee, K.-J.

2010-01-01

The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.

Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence

KAUST Repository

Manchon, Aurelien

2010-11-15

The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.

Inducing spin-dependent tunneling to probe magnetic correlations in optical lattices

DEFF Research Database (Denmark)

Pedersen, Kim-Georg; Andersen, Brian; Syljuåsen, Olav

2012-01-01

We suggest a simple experimental method for probing antiferromagnetic spin correlations of two-component Fermi gases in optical lattices. The method relies on a spin selective Raman transition to excite atoms of one spin species to their first excited vibrational mode where the tunneling is large....... The resulting difference in the tunneling dynamics of the two spin species can then be exploited, to reveal the spin correlations by measuring the number of doubly occupied lattice sites at a later time. We perform quantum Monte Carlo simulations of the spin system and solve the optical lattice dynamics...

Electron tunneling in lithium-ammonia solutions probed by frequency-dependent electron spin relaxation studies.

Science.gov (United States)

Maeda, Kiminori; Lodge, Matthew T J; Harmer, Jeffrey; Freed, Jack H; Edwards, Peter P

2012-06-06

Electron transfer or quantum tunneling dynamics for excess or solvated electrons in dilute lithium-ammonia solutions have been studied by pulse electron paramagnetic resonance (EPR) spectroscopy at both X- (9.7 GHz) and W-band (94 GHz) frequencies. The electron spin-lattice (T(1)) and spin-spin (T(2)) relaxation data indicate an extremely fast transfer or quantum tunneling rate of the solvated electron in these solutions which serves to modulate the hyperfine (Fermi-contact) interaction with nitrogen nuclei in the solvation shells of ammonia molecules surrounding the localized, solvated electron. The donor and acceptor states of the solvated electron in these solutions are the initial and final electron solvation sites found before, and after, the transfer or tunneling process. To interpret and model our electron spin relaxation data from the two observation EPR frequencies requires a consideration of a multiexponential correlation function. The electron transfer or tunneling process that we monitor through the correlation time of the nitrogen Fermi-contact interaction has a time scale of (1-10) × 10(-12) s over a temperature range 230-290 K in our most dilute solution of lithium in ammonia. Two types of electron-solvent interaction mechanisms are proposed to account for our experimental findings. The dominant electron spin relaxation mechanism results from an electron tunneling process characterized by a variable donor-acceptor distance or range (consistent with such a rapidly fluctuating liquid structure) in which the solvent shell that ultimately accepts the transferring electron is formed from random, thermal fluctuations of the liquid structure in, and around, a natural hole or Bjerrum-like defect vacancy in the liquid. Following transfer and capture of the tunneling electron, further solvent-cage relaxation with a time scale of ∼10(-13) s results in a minor contribution to the electron spin relaxation times. This investigation illustrates the great

Electron Tunneling in Lithium Ammonia Solutions Probed by Frequency-Dependent Electron-Spin Relaxation Studies

Science.gov (United States)

Maeda, Kiminori; Lodge, Matthew T.J.; Harmer, Jeffrey; Freed, Jack H.; Edwards, Peter P.

2012-01-01

Electron transfer or quantum tunneling dynamics for excess or solvated electrons in dilute lithium-ammonia solutions have been studied by pulse electron paramagnetic resonance (EPR) spectroscopy at both X- (9.7 GHz) and W-band (94 GHz) frequencies. The electron spin-lattice (T1) and spin-spin (T2) relaxation data indicate an extremely fast transfer or quantum tunneling rate of the solvated electron in these solutions which serves to modulate the hyperfine (Fermi-contact) interaction with nitrogen nuclei in the solvation shells of ammonia molecules surrounding the localized, solvated electron. The donor and acceptor states of the solvated electron in these solutions are the initial and final electron solvation sites found before, and after, the transfer or tunneling process. To interpret and model our electron spin relaxation data from the two observation EPR frequencies requires a consideration of a multi-exponential correlation function. The electron transfer or tunneling process that we monitor through the correlation time of the nitrogen Fermi-contact interaction has a time scale of (1–10)×10−12 s over a temperature range 230–290K in our most dilute solution of lithium in ammonia. Two types of electron-solvent interaction mechanisms are proposed to account for our experimental findings. The dominant electron spin relaxation mechanism results from an electron tunneling process characterized by a variable donor-acceptor distance or range (consistent with such a rapidly fluctuating liquid structure) in which the solvent shell that ultimately accepts the transferring electron is formed from random, thermal fluctuations of the liquid structure in, and around, a natural hole or Bjerrum-like defect vacancy in the liquid. Following transfer and capture of the tunneling electron, further solvent-cage relaxation with a timescale of ca. 10−13 s results in a minor contribution to the electron spin relaxation times. This investigation illustrates the great potential

Spin-flip tunneling in quantum dots

Energy Technology Data Exchange (ETDEWEB)

Schreiber, Lars; Braakman, Floris; Meunier, Tristan; Calado, Victor; Vandersypen, Lieven [Kavli Institute of NanoScience, Delft (Netherlands); Wegscheider, Werner [Institute for Experimental and Applied Physics, University of Regensburg (Germany)

2010-07-01

Electron spins in a gate-defined double quantum dot formed in a GaAs/(Al,Ga)As 2DEG are promising candidates for quantum information processing as coherent single spin rotation and spin swap has been demonstrated recently. In this system we investigate the two-electron spin dynamics in the presence of microwaves (5.20 GHz) applied to one side gate. During microwave excitation we observe characteristic photon assisted tunneling (PAT) peaks at the (1,1) to (0,2) charge transition. Some of the PAT peaks are attributed to photon tunneling events between the singlet S(0,2) and the singlet S(1,1) states, a spin-conserving transition. Surprisingly, other PAT peaks stand out by their different external magnetic field dependence. They correspond to tunneling involving a spin-flip, from the (0,2) singlet to a (1,1) triplet. The full spectrum of the observed PAT lines is captured by simulations. This process offers novel possibilities for 2-electron spin manipulation and read-out.

Spin polarized electron tunneling and magnetoresistance in molecular junctions.

Science.gov (United States)

Szulczewski, Greg

2012-01-01

This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

Homoepitaxial graphene tunnel barriers for spin transport

Directory of Open Access Journals (Sweden)

Adam L. Friedman

2016-05-01

Full Text Available Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

Homoepitaxial graphene tunnel barriers for spin transport

Science.gov (United States)

Friedman, Adam L.; van't Erve, Olaf M. J.; Robinson, Jeremy T.; Whitener, Keith E.; Jonker, Berend T.

2016-05-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate that hydrogenation or fluorination of graphene can be used to create a tunnel barrier. We demonstrate successful tunneling by measuring non-linear IV curves and a weakly temperature dependent zero-bias resistance. We demonstrate lateral transport of spin currents in non-local spin-valve structures, and determine spin lifetimes with the non-local Hanle effect. We compare the results for hydrogenated and fluorinated tunnel and we discuss the possibility that ferromagnetic moments in the hydrogenated graphene tunnel barrier affect the spin transport of our devices.

The anisotropic tunneling behavior of spin transport in graphene-based magnetic tunneling junction

Science.gov (United States)

Pan, Mengchun; Li, Peisen; Qiu, Weicheng; Zhao, Jianqiang; Peng, Junping; Hu, Jiafei; Hu, Jinghua; Tian, Wugang; Hu, Yueguo; Chen, Dixiang; Wu, Xuezhong; Xu, Zhongjie; Yuan, Xuefeng

2018-05-01

Due to the theoretical prediction of large tunneling magnetoresistance (TMR), graphene-based magnetic tunneling junction (MTJ) has become an important branch of high-performance spintronics device. In this paper, the non-collinear spin filtering and transport properties of MTJ with the Ni/tri-layer graphene/Ni structure were studied in detail by utilizing the non-equilibrium Green's formalism combined with spin polarized density functional theory. The band structure of Ni-C bonding interface shows that Ni-C atomic hybridization facilitates the electronic structure consistency of graphene and nickel, which results in a perfect spin filtering effect for tri-layer graphene-based MTJ. Furthermore, our theoretical results show that the value of tunneling resistance changes with the relative magnetization angle of two ferromagnetic layers, displaying the anisotropic tunneling behavior of graphene-based MTJ. This originates from the resonant conduction states which are strongly adjusted by the relative magnetization angles. In addition, the perfect spin filtering effect is demonstrated by fitting the anisotropic conductance with the Julliere's model. Our work may serve as guidance for researches and applications of graphene-based spintronics device.

Intradot spin-flip Andreev reflection tunneling through a ferromagnet-quantum dot-superconductor system with ac field

International Nuclear Information System (INIS)

Song Hongyan; Zhou Shiping

2008-01-01

We investigate Andreev reflection (AR) tunneling through a ferromagnet-quantum dot-superconductor (F-QD-S) system in the presence of an external ac field. The intradot spin-flip scattering in the QD is involved. Using the nonequilibrium Green function and BCS quasiparticle spectrum for superconductor, time-averaged AR conductance is formulated. The competition between the intradot spin-flip scattering and photon-assisted tunneling dominates the resonant behaviors of the time-averaged AR conductance. For weak intradot spin-flip scattering strengths, the AR conductance shows a series of equal interval resonant levels. However, the single-peak at main resonant level develops into a well-resolved double-peak resonance at a strong intradot spin-flip scattering strength. Remarkable, multiple-photon-assisted tunneling that generates photonic sideband peaks with a variable interval has been found. In addition, the AR conductance-bias voltage characteristic shows a transition between the single-peak to double-peak resonance as the ratio of the two tunneling strengths varies

Resonant Spin-Transfer-Torque Nano-Oscillators

Science.gov (United States)

Sharma, Abhishek; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

2017-12-01

Spin-transfer-torque nano-oscillators are potential candidates for replacing the traditional inductor-based voltage-controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel junctions, which have the disadvantages of low power outputs and poor conversion efficiencies. We theoretically propose using resonant spin filtering in pentalayer magnetic tunnel junctions as a possible route to alleviate these issues and present viable device designs geared toward a high microwave output power and an efficient conversion of the dc input power. We attribute these robust qualities to the resulting nontrivial spin-current profiles and the ultrahigh tunnel magnetoresistance, both of which arise from resonant spin filtering. The device designs are based on the nonequilibrium Green's-function spin-transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation and Poisson's equation. We demonstrate that the proposed structures facilitate oscillator designs featuring a large enhancement in microwave power of around 1150% and an efficiency enhancement of over 1100% compared to typical trilayer designs. We rationalize the optimum operating regions via an analysis of the dynamic and static device resistances. We also demonstrate the robustness of our structures against device design fluctuations and elastic dephasing. This work sets the stage for pentalyer spin-transfer-torque nano-oscillator device designs that ameliorate major issues associated with typical trilayer designs.

Resonant tunnel magnetoresistance in a double magnetic tunnel junction

KAUST Repository

Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen

2011-01-01

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can

All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

Science.gov (United States)

Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

2011-04-01

A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

The critical role of the barrier thickness in spin filter tunneling

International Nuclear Information System (INIS)

Miller, Casey W.

2009-01-01

Spin filter tunneling is considered in the low bias limit as functions of the temperature dependent barrier parameters. We demonstrate the generation of spin polarized tunneling currents in relation to the magnetic order parameter, and discuss how an interfacially suppressed order parameter leads to a temperature dependent tunneling current asymmetry. Analyzing the full parameter space reveals that the often overlooked barrier thickness plays a critical role in spin filter tunneling. With all else fixed, thicker barriers yield higher spin polarization, and allow a given polarization to be achieved at higher temperatures. This insight may open the door for new materials to serve as spin filter barriers.

High-frequency spin-dependent tunnelling in magnetic nanocomposites: Magnetorefractive effect and magnetoimpedance

Energy Technology Data Exchange (ETDEWEB)

Granovsky, Alexander [Faculty of Physics, Lomonosov Moscow State University, Moscow 119992 (Russian Federation)]. E-mail: granov@magn.ru; Kozlov, Andrey [Faculty of Physics, Lomonosov Moscow State University, Moscow 119992 (Russian Federation); Nedukh, Sergey [Institute of Radiophysics and Electronics NAS of Ukraine, Kharkov 61085 (Ukraine); Tarapov, Sergey [Institute of Radiophysics and Electronics NAS of Ukraine, Kharkov 61085 (Ukraine)

2005-07-15

Since the dielectric permittivity is linear with frequency-dependent conductivity, high-frequency properties for any kind of magnetic materials with the high magnetoresistance depend on magnetization. It manifests as magnetorefractive effect (MRE) in the infrared region of spectrum and as magnetoimpedance (MI) in the frequency range between radio and microwaves. The main mechanism of both MRE and MI in nanocomposites with tunnel-type magnetoresistance is high-frequency spin-dependent tunnelling. We report on recent results of theoretical and experimental investigations of MRE and MI in nanocomposites Co{sub 51.5}Al{sub 19.5}O{sub 29}, Co{sub 50.2}Ti{sub 9.1}O{sub 40.7}, Co{sub 52.3}Si{sub 12.2}O{sub 35.5} and (Co{sub 0,4}Fe{sub 0,6}){sub 48}(MgF){sub 52}. Most of the obtained experimental data for MRE and MI are consistent with the theory based on considering the tunnel junction between adjacent granules in percolation cluster as a capacitor.

Inelastic electron tunneling spectroscopy of a single nuclear spin.

Science.gov (United States)

Delgado, F; Fernández-Rossier, J

2011-08-12

Detection of a single nuclear spin constitutes an outstanding problem in different fields of physics such as quantum computing or magnetic imaging. Here we show that the energy levels of a single nuclear spin can be measured by means of inelastic electron tunneling spectroscopy (IETS). We consider two different systems, a magnetic adatom probed with scanning tunneling microscopy and a single Bi dopant in a silicon nanotransistor. We find that the hyperfine coupling opens new transport channels which can be resolved at experimentally accessible temperatures. Our simulations evince that IETS yields information about the occupations of the nuclear spin states, paving the way towards transport-detected single nuclear spin resonance.

Observation of spin Hall effect in photon tunneling via weak measurements.

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-12-09

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications.

Observation of Spin Hall Effect in Photon Tunneling via Weak Measurements

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-01-01

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications. PMID:25487043

Tunnel magnetoresistance in double spin filter junctions

International Nuclear Information System (INIS)

Saffarzadeh, Alireza

2003-01-01

We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

Investigating spin-transfer torques induced by thermal gradients in magnetic tunnel junctions by using micro-cavity ferromagnetic resonance

Science.gov (United States)

Cansever, H.; Narkowicz, R.; Lenz, K.; Fowley, C.; Ramasubramanian, L.; Yildirim, O.; Niesen, A.; Huebner, T.; Reiss, G.; Lindner, J.; Fassbender, J.; Deac, A. M.

2018-06-01

Similar to electrical currents flowing through magnetic multilayers, thermal gradients applied across the barrier of a magnetic tunnel junction may induce pure spin-currents and generate ‘thermal’ spin-transfer torques large enough to induce magnetization dynamics in the free layer. In this study, we describe a novel experimental approach to observe spin-transfer torques induced by thermal gradients in magnetic multilayers by studying their ferromagnetic resonance response in microwave cavities. Utilizing this approach allows for measuring the magnetization dynamics on micron/nano-sized samples in open-circuit conditions, i.e. without the need of electrical contacts. We performed first experiments on magnetic tunnel junctions patterned into 6  ×  9 µm2 ellipses from Co2FeAl/MgO/CoFeB stacks. We conducted microresonator ferromagnetic resonance (FMR) under focused laser illumination to induce thermal gradients in the layer stack and compared them to measurements in which the sample was globally heated from the backside of the substrate. Moreover, we carried out broadband FMR measurements under global heating conditions on the same extended films the microstructures were later on prepared from. The results clearly demonstrate the effect of thermal spin-torque on the FMR response and thus show that the microresonator approach is well suited to investigate thermal spin-transfer-driven processes for small temperatures gradients, far below the gradients required for magnetic switching.

Spin heat accumulation induced by tunneling from a ferromagnet.

Science.gov (United States)

Vera-Marun, I J; van Wees, B J; Jansen, R

2014-02-07

An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

International Nuclear Information System (INIS)

Daqiq, Reza; Ghobadi, Nader

2016-01-01

We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

Quantum size effects on spin-transfer torque in a double barrier magnetic tunnel junction with a nonmagnetic-metal (semiconductor) spacer

Energy Technology Data Exchange (ETDEWEB)

Daqiq, Reza; Ghobadi, Nader

2016-07-15

We study the quantum size effects of an MgO-based double barrier magnetic tunnel junction with a nonmagnetic-metal (DBMTJ-NM) (semiconductor (DBMTJ-SC)) spacer on the charge current and the spin-transfer torque (STT) components using non-equilibrium Green's function (NEGF) formalism. The results show oscillatory behavior due to the resonant tunneling effect depending on the structure parameters. We find that the charge current and the STT components in the DBMTJ-SC demonstrate the magnitude enhancement in comparison with the DBMTJ-NM. The bias dependence of the STT components in a DBMTJ-NM shows different behavior in comparison with spin valves and conventional MTJs. Therefore, by choosing a specific SC spacer with suitable thickness in a DBMTJ the charge current and the STT components significantly increase so that one can design a device with high STT and faster magnetization switching. - Highlights: • The quantum size effects are studied in double barrier magnetic tunnel junctions. • Spin torque (ST) components oscillate for increasing of middle spacer thicknesses. • Due to the resonant tunneling in the quantum well, oscillations have appeared. • By replacement a metal spacer with a semiconductor (ZnO) ST has increased. • The ST components vs. bias show gradually decreasing unlike spin valves or MTJs.

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2017-04-18

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling electrical manipulation of the Néel antiferromagnetic order parameter is out of plane, ∼n×p, while the torque competing with the antiferromagnetic exchange is in plane, ∼n×(p×n). Here, p and n are the Néel order parameter direction of the reference and free layers, respectively. Their bias dependence shows behavior similar to that in ferromagnetic tunnel junctions, the in-plane torque being mostly linear in bias, while the out-of-plane torque is quadratic. Most importantly, we find that the spin transfer torque in antiferromagnetic tunnel junctions is much more robust against disorder than that in antiferromagnetic metallic spin valves due to the tunneling nature of spin transport.

Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

International Nuclear Information System (INIS)

Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.

2015-01-01

The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown

Large Current Modulation and Spin-Dependent Tunneling of Vertical Graphene/MoS$_{2}$ Heterostructures

OpenAIRE

Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, Gukhyung

2013-01-01

Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermio...

Dresselhaus spin-orbit coupling induced spin-polarization and resonance-split in n-well semiconductor superlattices

International Nuclear Information System (INIS)

Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.

2009-01-01

Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure

Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films.

Science.gov (United States)

Li, D L; Ma, Q L; Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X-G; Kohn, A; Amsellem, E; Yang, G; Liu, J L; Jiang, J; Wei, H X; Han, X F

2014-12-02

Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.

Suppression of tunneling by interference in half-integer--spin particles

OpenAIRE

Loss, Daniel; DiVincenzo, David P.; Grinstein, G.

1992-01-01

Within a wide class of ferromagnetic and antiferromagnetic systems, quantum tunneling of magnetization direction is spin-parity dependent: it vanishes for magnetic particles with half-integer spin, but is allowed for integer spin. A coherent-state path integral calculation shows that this topological effect results from interference between tunneling paths.

Resonant optical tunneling-induced enhancement of the photonic spin Hall effect

Science.gov (United States)

Jiang, Xing; Wang, Qingkai; Guo, Jun; Zhang, Jin; Chen, Shuqing; Dai, Xiaoyu; Xiang, Yuanjiang

2018-04-01

Due to the quantum analogy with optics, the resonant optical tunneling effect (ROTE) has been proposed to investigate both the fundamental physics and the practical applications of optical switches and liquid refractive index sensors. In this paper, the ROTE is used to enhance the spin Hall effect (SHE) of transmitted light. It is demonstrated that sandwiching a layer of a high-refractive-index medium (boron nitride crystal) between two low-refractive-index layers (silica) can effectively enhance the photonic SHE due to the increased refractive index gradient and an enhanced evanescent field near the interface between silica and boron nitride. A maximum transverse shift of the horizontal polarization state in the ROTE structure of about 22.25 µm has been obtained, which is at least three orders of magnitude greater than the transverse shift in the frustrated total internal reflection structure. Moreover, the SHE can be manipulated by controlling the component materials and the thickness of the ROTE structure. These findings open the possibility for future applications of photonic SHE in precision metrology and spin-based photonics.

Size dependence of spin-torque induced magnetic switching in CoFeB-based perpendicular magnetization tunnel junctions (invited)

Science.gov (United States)

Sun, J. Z.; Trouilloud, P. L.; Gajek, M. J.; Nowak, J.; Robertazzi, R. P.; Hu, G.; Abraham, D. W.; Gaidis, M. C.; Brown, S. L.; O'Sullivan, E. J.; Gallagher, W. J.; Worledge, D. C.

2012-04-01

CoFeB-based magnetic tunnel junctions with perpendicular magnetic anisotropy are used as a model system for studies of size dependence in spin-torque-induced magnetic switching. For integrated solid-state memory applications, it is important to understand the magnetic and electrical characteristics of these magnetic tunnel junctions as they scale with tunnel junction size. Size-dependent magnetic anisotropy energy, switching voltage, apparent damping, and anisotropy field are systematically compared for devices with different materials and fabrication treatments. Results reveal the presence of sub-volume thermal fluctuation and reversal, with a characteristic length-scale of the order of approximately 40 nm, depending on the strength of the perpendicular magnetic anisotropy and exchange stiffness. To have the best spin-torque switching efficiency and best stability against thermal activation, it is desirable to optimize the perpendicular anisotropy strength with the junction size for intended use. It also is important to ensure strong exchange-stiffness across the magnetic thin film. These combine to give an exchange length that is comparable or larger than the lateral device size for efficient spin-torque switching.

Role of phase breaking processes on resonant spin transfer torque nano-oscillators

Science.gov (United States)

Sharma, Abhishek; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

2018-05-01

Spin transfer torque nano-oscillators (STNOs) based on magnetoresistance and spin transfer torque effects find potential applications in miniaturized wireless communication devices. Using the non-coherent non-equilibrium Green's function spin transport formalism self-consistently coupled with the stochastic Landau-Lifshitz-Gilbert-Slonczewski's equation and the Poisson's equation, we elucidate the role of elastic phase breaking on the proposed STNO design featuring double barrier resonant tunneling. Demonstrating the immunity of our proposed design, we predict that despite the presence of elastic dephasing, the resonant tunneling magnetic tunnel junction structures facilitate oscillator designs featuring a large enhancement in microwave power up to 8μW delivered to a 50Ω load.

Observation of the Distribution of Molecular Spin States by Resonant Quantum Tunneling of the Magnetization

Science.gov (United States)

Wernsdorfer, W.; Ohm, T.; Sangregorio, C.; Sessoli, R.; Mailly, D.; Paulsen, C.

1999-05-01

Below 360 mK, Fe8 magnetic molecular clusters are in the pure quantum relaxation regime and we show that the predicted ``square-root time'' relaxation is obeyed, allowing us to develop a new method for watching the evolution of the distribution of molecular spin states in the sample. We measure as a function of applied field H the statistical distribution P\\(ξH\\) of magnetic energy bias ξH acting on the molecules. Tunneling initially causes rapid transitions of molecules, thereby ``digging a hole'' in P\\(ξH\\) (around the resonant condition ξH = 0). For small initial magnetization values, the hole width shows an intrinsic broadening which may be due to nuclear spins.

Spin-dependent tunneling conductance in 2D structures in zero magnetic field

International Nuclear Information System (INIS)

Rozhansky, I.V.; Averkiev, N.S.

2009-01-01

The influence of the spin-orbit interaction on the tunneling between two-dimensional electron layers is considered. A general expression for the tunneling current is obtained with the Rashba and Dresselhaus effects and also elastic scattering of charge carriers on impurities taken into account. It is shown that the particular form of the tunneling conductance as a function of the voltage between layers is extremely sensitive to the relationship between the Rashba and Dresselhaus parameters. This makes it possible to determine the parameters of the spin-orbit interaction and the quantum scattering time directly from measurements of the tunneling conductance in the absence of magnetic field

Tunnel splitting in biaxial spin models investigated with spin-coherent-state path integrals

International Nuclear Information System (INIS)

Chen Zhide; Liang, J.-Q.; Pu, F.-C.

2003-01-01

Tunnel splitting in biaxial spin models is investigated with a full evaluation of the fluctuation functional integrals of the Euclidean kernel in the framework of spin-coherent-state path integrals which leads to a magnitude of tunnel splitting quantitatively comparable with the numerical results in terms of diagonalization of the Hamilton operator. An additional factor resulted from a global time transformation converting the position-dependent mass to a constant one seems to be equivalent to the semiclassical correction of the Lagrangian proposed by Enz and Schilling. A long standing question whether the spin-coherent-state representation of path integrals can result in an accurate tunnel splitting is therefore resolved

Probing quantum coherence in single-atom electron spin resonance

Science.gov (United States)

Willke, Philip; Paul, William; Natterer, Fabian D.; Yang, Kai; Bae, Yujeong; Choi, Taeyoung; Fernández-Rossier, Joaquin; Heinrich, Andreas J.; Lutz, Christoper P.

2018-01-01

Spin resonance of individual spin centers allows applications ranging from quantum information technology to atomic-scale magnetometry. To protect the quantum properties of a spin, control over its local environment, including energy relaxation and decoherence processes, is crucial. However, in most existing architectures, the environment remains fixed by the crystal structure and electrical contacts. Recently, spin-polarized scanning tunneling microscopy (STM), in combination with electron spin resonance (ESR), allowed the study of single adatoms and inter-atomic coupling with an unprecedented combination of spatial and energy resolution. We elucidate and control the interplay of an Fe single spin with its atomic-scale environment by precisely tuning the phase coherence time T2 using the STM tip as a variable electrode. We find that the decoherence rate is the sum of two main contributions. The first scales linearly with tunnel current and shows that, on average, every tunneling electron causes one dephasing event. The second, effective even without current, arises from thermally activated spin-flip processes of tip spins. Understanding these interactions allows us to maximize T2 and improve the energy resolution. It also allows us to maximize the amplitude of the ESR signal, which supports measurements even at elevated temperatures as high as 4 K. Thus, ESR-STM allows control of quantum coherence in individual, electrically accessible spins. PMID:29464211

Spin polarization of tunneling current in barriers with spin-orbit coupling

International Nuclear Information System (INIS)

Fujita, T; Jalil, M B A; Tan, S G

2008-01-01

We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons

Spin polarization of tunneling current in barriers with spin-orbit coupling.

Science.gov (United States)

Fujita, T; Jalil, M B A; Tan, S G

2008-03-19

We present a general method for evaluating the maximum transmitted spin polarization and optimal spin axis for an arbitrary spin-orbit coupling (SOC) barrier system, in which the spins lie in the azimuthal plane and finite spin polarization is achieved by wavevector filtering of electrons. Besides momentum filtering, another prerequisite for finite spin polarization is asymmetric occupation or transmission probabilities of the eigenstates of the SOC Hamiltonian. This is achieved most efficiently by resonant tunneling through multiple SOC barriers. We apply our analysis to common SOC mechanisms in semiconductors: pure bulk Dresselhaus SOC, heterostructures with mixed Dresselhaus and Rashba SOC and strain-induced SOC. In particular, we find that the interplay between Dresselhaus and Rashba SOC effects can yield several advantageous features for spin filter and spin injector functions, such as increased robustness to wavevector spread of electrons.

Angle-dependent spin-wave resonance spectroscopy of (Ga,Mn)As films

Science.gov (United States)

Dreher, L.; Bihler, C.; Peiner, E.; Waag, A.; Schoch, W.; Limmer, W.; Goennenwein, S. T. B.; Brandt, M. S.

2013-06-01

A modeling approach for standing spin-wave resonances based on a finite-difference formulation of the Landau-Lifshitz-Gilbert equation is presented. In contrast to a previous study [C. Bihler , Phys. Rev. BPRBMDO1098-012110.1103/PhysRevB.79.045205 79, 045205 (2009)], this formalism accounts for elliptical magnetization precession and magnetic properties arbitrarily varying across the layer thickness, including the magnetic anisotropy parameters, the exchange stiffness, the Gilbert damping, and the saturation magnetization. To demonstrate the usefulness of our modeling approach, we experimentally study a set of (Ga,Mn)As samples grown by low-temperature molecular-beam epitaxy by means of angle-dependent standing spin-wave resonance spectroscopy and electrochemical capacitance-voltage measurements. By applying our modeling approach, the angle dependence of the spin-wave resonance data can be reproduced in a simulation with one set of simulation parameters for all external field orientations. We find that the approximately linear gradient in the out-of-plane magnetic anisotropy is related to a linear gradient in the hole concentrations of the samples.

Homoepitaxial graphene tunnel barriers for spin transport (Presentation Recording)

Science.gov (United States)

Friedman, Adam L.

2015-09-01

Tunnel barriers are key elements for both charge-and spin-based electronics, offering devices with reduced power consumption and new paradigms for information processing. Such devices require mating dissimilar materials, raising issues of heteroepitaxy, interface stability, and electronic states that severely complicate fabrication and compromise performance. Graphene is the perfect tunnel barrier. It is an insulator out-of-plane, possesses a defect-free, linear habit, and is impervious to interdiffusion. Nonetheless, true tunneling between two stacked graphene layers is not possible in environmental conditions (magnetic field, temperature, etc.) usable for electronics applications. However, two stacked graphene layers can be decoupled using chemical functionalization. Here, we demonstrate homoepitaxial tunnel barrier devices in which graphene serves as both the tunnel barrier and the high mobility transport channel. Beginning with multilayer graphene, we fluorinate or hydrogenate the top layer to decouple it from the bottom layer, so that it serves as a single monolayer tunnel barrier for both charge and spin injection into the lower graphene transport channel. We demonstrate successful tunneling by measuring non-linear IV curves, and a weakly temperature dependent zero bias resistance. We perform lateral transport of spin currents in non-local spin-valve structures and determine spin lifetimes with the non-local Hanle effect to be commensurate with previous studies (~200 ps). However, we also demonstrate the highest spin polarization efficiencies (~45%) yet measured in graphene-based spin devices [1]. [1] A.L. Friedman, et al., Homoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transport, Nat. Comm. 5, 3161 (2014).

A hysteresis phenomenon in NMR spectra of molecular nanomagnets Fe8: a resonant quantum tunneling system

Science.gov (United States)

Yamasaki, Tomoaki; Ueda, Miki; Maegawa, Satoru

2003-05-01

A molecular nanomagnet Fe8 with a total spin S=10 in the ground state attracts much attention as a substance which exhibits the quantum tunneling of magnetization below 300 mK. We performed 1H NMR measurements for a single crystal of Fe8 in temperature range between 20 and 800 mK. The spectra below 300 mK strongly depend on the sequence of the applied field and those in the positive and negative fields are not symmetric about zero field, while they are symmetric above 300 mK. We discuss the origin of this hysteresis phenomenon, relating to the initial spin state of molecules, the resonant quantum tunneling and the nuclear spin relaxation process.

A hysteresis phenomenon in NMR spectra of molecular nanomagnets Fe8: a resonant quantum tunneling system

International Nuclear Information System (INIS)

Yamasaki, Tomoaki; Ueda, Miki; Maegawa, Satoru

2003-01-01

A molecular nanomagnet Fe8 with a total spin S=10 in the ground state attracts much attention as a substance which exhibits the quantum tunneling of magnetization below 300 mK. We performed 1 H NMR measurements for a single crystal of Fe8 in temperature range between 20 and 800 mK. The spectra below 300 mK strongly depend on the sequence of the applied field and those in the positive and negative fields are not symmetric about zero field, while they are symmetric above 300 mK. We discuss the origin of this hysteresis phenomenon, relating to the initial spin state of molecules, the resonant quantum tunneling and the nuclear spin relaxation process

Large positive spin polarization and giant inverse tunneling magnetoresistance in Fe/PbTiO3/Fe multiferroic tunnel junction

International Nuclear Information System (INIS)

Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min

2014-01-01

We perform first-principles electronic structure and spin-dependent transport calculations of a multiferroic tunnel junction (MFTJ) with an epitaxial Fe/PbTiO 3 /Fe heterostructure. We predict a large positive spin-polarization (SP) and an intriguing giant inverse tunneling magnetoresistance (TMR) ratio in this tunnel junction. We demonstrate that the tunneling properties are determined by ferroelectric (FE) polarization screening and electronic reconstruction at the interface with lower electrostatic potential. The intricate complex band structure of PbTiO 3 , in particular the lowest decay rates concerning Pb 6p z and Ti 3d z2 states near the Γ ¯ point, gives rise to the large positive SP of the tunneling current in the parallel magnetic configuration. However, the giant inverse TMR ratio is attributed to the minority-spin electrons of the interfacial Ti 3d xz +3d yz orbitals which have considerably weight in the extended area around the Γ ¯ point at the Fermi energy and causes remarkable contributions to the conductance in the antiparallel magnetic configuration. - Highlights: • We study spin-dependent tunneling in Fe/PbTiO 3 /Fe multiferroic tunnel junction. • We find a large positive spin polarization in the parallel magnetic configuration. • An intriguing giant inverse TMR ratio (about −2000%) is predicted. • Complex band structure of PbTiO 3 causes the large positive spin polarization. • Negative TMR is due to minority-spin electrons of interfacial Ti d xz +d yz orbitals

Experimental evidence of the dependence of spin tunnelling on the concentration of dislocations in Mn12 crystals

OpenAIRE

Torres, F.; Hernandez, J. M.; Molins, E.; Garcia-Santiago, A.; Tejada, J.

2001-01-01

We present experimental results on resonant spin tunnelling in a single crystal of Mn$_{12}$-2Cl benzoate with different concentration of dislocations. The time evolution of the magnetisation follows the stretched exponential over a few time decades. The values of parameters of stretched exponential deduced from experiment have been used to determine the concentration of dislocations before and after the cooling-annealing process, using the algorithm recently suggested by Garanin and Chudnovsky.

Radiation tolerance of a spin-dependent tunnelling magnetometer for space applications

International Nuclear Information System (INIS)

Persson, Anders; Thornell, Greger; Nguyen, Hugo

2011-01-01

To meet the increasing demand for miniaturized space instruments, efforts have been made to miniaturize traditional magnetometers, e.g. fluxgate and spin-exchange relaxation-free magnetometers. These have, for different reasons, turned out to be difficult. New technologies are needed, and promising in this respect are tunnelling magnetoresistive (TMR) magnetometers, which are based on thin film technology. However, all new space devices first have to be qualified, particularly in terms of radiation resistance. A study on TMR magnetometers' vulnerability to radiation is crucial, considering the fact that they employ a dielectric barrier, which can be susceptible to charge trapping from ionizing radiation. Here, a TMR-based magnetometer, called the spin-dependent tunnelling magnetometer (SDTM), is presented. A magnetometer chip consisting of three Wheatstone bridges, with an angular pitch of 120°, was fabricated using microstructure technology. Each branch of the Wheatstone bridges consists of eight pairs of magnetic tunnel junctions (MTJs) connected in series. Two such chips are used to measure the three-dimensional magnetic field vector. To investigate the SDTM's resistance to radiation, one branch of a Wheatstone bridge was irradiated with gamma rays from a Co 60 source with a dose rate of 10.9 rad min −1 to a total dose of 100 krad. The TMR of the branch was monitored in situ, and the easy axis TMR loop and low-frequency noise characteristics of a single MTJ were acquired before and after irradiation with the total dose. It was concluded that radiation did not influence the MTJs in any noticeable way in terms of the TMR ratio, coercivity, magnetostatic coupling or low-frequency noise

concentration on spin-dependent resonant tunnelling in InAs/Ga1 ...

Indian Academy of Sciences (India)

Cent percentage polarization can be obtained in this strained non-magnetic double-barrier ... Keywords. Spin–orbit interaction; barrier transparency; polarization efficiency; tunnelling lifetime. 1. Introduction ..... Figure 6. Tunnelling lifetime vs.

Spin-orbit coupling and electric-dipole spin resonance in a nanowire double quantum dot.

Science.gov (United States)

Liu, Zhi-Hai; Li, Rui; Hu, Xuedong; You, J Q

2018-02-02

We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated via two mechanisms: the SOC-induced intradot pseudospin states mixing and the interdot spin-flipped tunneling. The EDSR frequency and strength are determined by these mechanisms together. For both mechanisms the electric-dipole transition rates are strongly dependent on the external magnetic field. Their competition can be revealed by increasing the magnetic field and/or the interdot distance for the double dot. To clarify whether the strong SOC significantly impact the electron state coherence, we also calculate relaxations from excited levels via phonon emission. We show that spin-flip relaxations can be effectively suppressed by the phonon bottleneck effect even at relatively low magnetic fields because of the very large g-factor of strong SOC materials such as InSb.

Tunneling between edge states in a quantum spin Hall system.

Science.gov (United States)

Ström, Anders; Johannesson, Henrik

2009-03-06

We analyze a quantum spin Hall device with a point contact connecting two of its edges. The contact supports a net spin tunneling current that can be probed experimentally via a two-terminal resistance measurement. We find that the low-bias tunneling current and the differential conductance exhibit scaling with voltage and temperature that depend nonlinearly on the strength of the electron-electron interaction.

Resonant coherent quantum tunneling of the magnetization of spin-½ systems : Spin-parity effects

NARCIS (Netherlands)

García-Pablos, D.; García, N.; Raedt, H. De

1997-01-01

We perform quantum dynamical calculations to study the reversal of the magnetization for systems of a few spin-½ particles with a general biaxial anisotropy in the presence of an external magnetic field at T=0 and with no dissipation. Collective quantum tunneling of the magnetization is demonstrated

Spin microscope based on optically detected magnetic resonance

Science.gov (United States)

Berman, Gennady P.; Chernobrod, Boris M.

2007-12-11

The invention relates to scanning magnetic microscope which has a photoluminescent nanoprobe implanted in the tip apex of an atomic force microscope (AFM), a scanning tunneling microscope (STM) or a near-field scanning optical microscope (NSOM) and exhibits optically detected magnetic resonance (ODMR) in the vicinity of unpaired electron spins or nuclear magnetic moments in the sample material. The described spin microscope has demonstrated nanoscale lateral resolution and single spin sensitivity for the AFM and STM embodiments.

Inelastic tunneling spectroscopy for magnetic atoms and the Kondo resonance

International Nuclear Information System (INIS)

Goldberg, E C; Flores, F

2013-01-01

The interaction between a single magnetic atom and the metal environment (including a magnetic field) is analyzed by introducing an ionic Hamiltonian combined with an effective crystal-field term, and by using a Green-function equation of motion method. This approach describes the inelastic electron tunneling spectroscopy and the Kondo resonances as due to atomic spin fluctuations associated with electron co-tunneling processes between the leads and the atom. We analyze in the case of Fe on CuN the possible spin fluctuations between states with S = 2 and 3/2 or 5/2 and conclude that the experimentally found asymmetries in the conductance with respect to the applied bias, and its marked structures, are well explained by the 2↔3/2 spin fluctuations. The case of Co is also considered and shown to present, in contrast with Fe, a resonance at the Fermi energy corresponding to a Kondo temperature of 6 K. (paper)

Spin tunneling and manipulation in nanostructures.

Science.gov (United States)

Sherman, E Ya; Ban, Yue; Gulyaev, L V; Khomitsky, D V

2012-09-01

The results for joint effects of tunneling and spin-orbit coupling on spin dynamics in nanostructures are presented for systems with discrete and continuous spectra. We demonstrate that tunneling plays the crucial role in the spin dynamics and the abilities of spin manipulation by external electric field. This result can be important for design of nanostructures-based spintronics devices.

Analytic expression for the giant fieldlike spin torque in spin-filter magnetic tunnel junctions

Science.gov (United States)

Tang, Y.-H.; Huang, Z.-W.; Huang, B.-H.

2017-08-01

We propose analytic expressions for fieldlike, T⊥, and spin-transfer, T∥, spin torque components in the spin-filter-based magnetic tunnel junction (SFMTJ), by using the single-band tight-binding model with the nonequilibrium Keldysh formalism. In consideration of multireflection processes between noncollinear magnetization of the spin-filter (SF) barrier and the ferromagnetic (FM) electrode, the central spin-selective SF barrier plays an active role in the striking discovery T⊥≫T∥ , which can be further identified by the unusual barrier thickness dependence of giant T⊥. Our general expressions reveal the sinusoidal angular dependence of both spin torque components, even in the presence of the SF barrier.

Spin with two snakes and overlapping resonances

International Nuclear Information System (INIS)

Lee, S.Y.; Zhao, X.F.

1987-01-01

We study the effect of multiple spin depolarization resonances on the spin of the particles with two snakes. When two resonances are well separated, the polarization can be restored in passing through these resonances provided that the snake resonances are avoided. When two resonances are overlapping, the beam particles may be depolarized depending on the spacing between these two resonances. If the spacing between these two resonances is an odd number for two snakes, the beam particles may be depolarized depending on the strength of the resonance. When the spacing becomes an even number, the spin can tolerate a much larger resonance strength without depolarization. Numerical simulations can be shown to agree well with the analytic formula. However, the spin is susceptible to the combination of an intrinsic and an imperfection resonances even in the presence of the snakes. Numerical simulation indicates that the spin can be restored after the resonances provided that imperfection strength is less than 0.1 if intrinsic strength is fixed at 0.745

Manifestation of Spin Selection Rules on the Quantum Tunneling of Magnetization in a Single Molecule Magnet

OpenAIRE

Henderson, J. J.; Koo, C.; Feng, P. L.; del Barco, E.; Hill, S.; Tupitsyn, I. S.; Stamp, P. C. E.; Hendrickson, D. N.

2009-01-01

We present low temperature magnetometry measurements on a new Mn3 single-molecule magnet (SMM) in which the quantum tunneling of magnetization (QTM) displays clear evidence for quantum mechanical selection rules. A QTM resonance appearing only at elevated temperatures demonstrates tunneling between excited states with spin projections differing by a multiple of three: this is dictated by the C3 symmetry of the molecule, which forbids pure tunneling from the lowest metastable state. Resonances...

Spin Heat Accumulation Induced by Tunneling from a Ferromagnet

NARCIS (Netherlands)

Vera-Marun, I.J.; Wees, B.J. van; Jansen, R.

2014-01-01

An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the

Spin nutation effects in molecular nanomagnet–superconductor tunnel junctions

International Nuclear Information System (INIS)

Abouie, J; Abdollahipour, B; Rostami, A A

2013-01-01

We study the spin nutation effects of a molecular nanomagnet on the Josephson current through a superconductor|molecular nanomagnet|superconductor tunnel junction. We explicitly demonstrate that, due to the spin nutation of the molecular nanomagnet, two oscillatory terms emerge in the ac Josephson current in addition to the conventional ac Josephson current. Some resonances occur in the junction due to the interactions of the transported quasiparticles with the bias voltage and molecular nanomagnet spin dynamics. Their appearance indicates that the energy exchanged during these interactions is in the range of the superconducting energy gap. We also show that the spin nutation is able to convert the ac Josephson current to a dc current, which is interesting for applications. (paper)

Reflection effect of localized absorptive potential on non-resonant and resonant tunneling

International Nuclear Information System (INIS)

Rubio, A.; Kumar, N.

1992-06-01

The reflection due to absorptive potential (-iV i ) for resonant and non-resonant tunneling has been considered. We show that the effect of reflection leads to a non-monotonic dependence of absorption on the strength V i with a maximum absorption of typically 0.5. This has implications for the operation of resonant tunneling devices. General conceptual aspects of absorptive potentials are discussed. (author). 9 refs, 2 figs

Spin inelastic electron tunneling spectroscopy on local spin adsorbed on surface.

Science.gov (United States)

Fransson, J

2009-06-01

The recent experimental conductance measurements taken on magnetic impurities on metallic surfaces, using scanning tunneling microscopy technique and suggesting occurrence of inelastic scattering processes, are theoretically addressed. We argue that the observed conductance signatures are caused by transitions between the spin states that have opened due to, for example, exchange coupling between the local spins and the tunneling electrons, and are directly interpretable in terms of inelastic transitions energies. Feasible measurements using spin-polarized scanning tunneling microscopy that would enable new information about the excitation spectrum of the local spins are discussed.

Recent advances in atomic-scale spin-polarized scanning tunneling microscopy.

Science.gov (United States)

Smith, Arthur R; Yang, Rong; Yang, Haiqiang; Dick, Alexey; Neugebauer, Joerg; Lambrecht, Walter R L

2005-02-01

The Mn3N2 (010) surface has been studied using spin-polarized scanning tunneling microscopy at the atomic scale. The principle objective of this work is to elucidate the properties and potential of this technique to measure atomic-scale magnetic structures. The experimental approach involves the use of a combined molecular beam epitaxy/scanning tunneling microscopy system that allows the study of atomically clean magnetic surfaces. Several key findings have been obtained. First, both magnetic and non-magnetic atomic-scale information has been obtained in a single spin-polarized image. Magnetic modulation of the height profile having an antiferromagnetic super-period of c = 12.14 A (6 atomic rows) together with a non-magnetic superstructure having a period of c/2 = 6.07 A (3 atomic rows) was observed. Methods of separation of magnetic and non-magnetic profiles are presented. Second, bias voltage-dependent spin-polarized images show a reversal of the magnetic modulation at a particular voltage. This reversal is clearly due to a change in the sign of the magnetic term in the tunnel current. Since this term depends on both the tip's as well as the sample's magnetic local density of states, the reversal can be caused by either the sample or the tip. Third, the shape of the line profile was found to vary with the bias voltage, which is related to the energy-dependent spin contribution from the 2 chemically inequivalent Mn sites on the surface. Overall, the results shown here expand the application of the method of spin-polarized scanning tunneling microscopy to measure atomic-scale magnetic structures. (c) 2005 Wiley-Liss, Inc.

The tunneling magnetoresistance and spin-polarized optoelectronic properties of graphyne-based molecular magnetic tunnel junctions

International Nuclear Information System (INIS)

Yang, Zhi; Ouyang, Bin; Lan, Guoqing; Xu, Li-Chun; Liu, Ruiping; Liu, Xuguang

2017-01-01

Using density functional theory and the non-equilibrium Green’s function method, we investigate the spin-dependent transport and optoelectronic properties of the graphyne-based molecular magnetic tunnel junctions (MMTJs). We find that these MMTJs exhibit an outstanding tunneling magnetoresistance (TMR) effect. The TMR value is as high as 10 6 %. When the magnetization directions of two electrodes are antiparallel under positive or negative bias voltages, two kinds of pure spin currents can be obtained in the systems. Furthermore, under the irradiation of infrared, visible or ultraviolet light, spin-polarized photocurrents can be generated in the MMTJs, but the corresponding microscopic mechanisms are different. More importantly, if the magnetization directions of two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents. (paper)

Spin Polarization Oscillations without Spin Precession: Spin-Orbit Entangled Resonances in Quasi-One-Dimensional Spin Transport

Directory of Open Access Journals (Sweden)

D. H. Berman

2014-03-01

Full Text Available Resonant behavior involving spin-orbit entangled states occurs for spin transport along a narrow channel defined in a two-dimensional electron gas, including an apparent rapid relaxation of the spin polarization for special values of the channel width and applied magnetic field (so-called ballistic spin resonance. A fully quantum-mechanical theory for transport using multiple subbands of the one-dimensional system provides the dependence of the spin density on the applied magnetic field and channel width and position along the channel. We show how the spatially nonoscillating part of the spin density vanishes when the Zeeman energy matches the subband energy splittings. The resonance phenomenon persists in the presence of disorder.

Resonant coherent quantum tunneling of the magnetization of spin-systems: Spin-parity effects

NARCIS (Netherlands)

Garcia-Pablos, D; Garcia, N; de Raedt, H.A.

1997-01-01

We perform quantum dynamical calculations to study the reversal of the magnetization for systems of a few the presence of an external magnetic field at T=0 and with no dissipation. Collective quantum tunneling of the magnetization is demonstrated to occur only for some specific resonant values of

Interconnected magnetic tunnel junctions for spin-logic applications

Science.gov (United States)

Manfrini, Mauricio; Vaysset, Adrien; Wan, Danny; Raymenants, Eline; Swerts, Johan; Rao, Siddharth; Zografos, Odysseas; Souriau, Laurent; Gavan, Khashayar Babaei; Rassoul, Nouredine; Radisic, Dunja; Cupak, Miroslav; Dehan, Morin; Sayan, Safak; Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A.; Mocuta, Dan; Radu, Iuliana P.

2018-05-01

With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel junctions. By means of spin-transfer torque effect, domains walls are produced at the common free layer and its propagation towards the output pillar sensed by tunneling magneto-resistance. Domain pinning conditions are studied quasi-statically showing a strong dependence on pillar size, ferromagnetic free layer width and inter-pillar distance. Addressing pinning conditions are detrimental for cascading and fan-out of domain walls across nodes, enabling the realization of domain-wall-based logic technology.

The theory of coherent resonance tunneling of interacting electrons

International Nuclear Information System (INIS)

Elesin, V. F.

2001-01-01

Analytical solutions of the Schrödinger equation for a two-barrier structure (resonance-tunnel diode) with open boundary conditions are found within the model of coherent tunneling of interacting electrons. Simple expressions for resonance current are derived which enable one to analyze the current-voltage characteristics, the conditions of emergence of hysteresis, and singularities of the latter depending on the parameters of resonance-tunnel diode. It is demonstrated that the hysteresis is realized if the current exceeds some critical value proportional to the square of resonance level width.

Temperature dependence of shot noise in double barrier magnetic tunnel junctions

Science.gov (United States)

Niu, Jiasen; Liu, Liang; Feng, J. F.; Han, X. F.; Coey, J. M. D.; Zhang, X.-G.; Wei, Jian

2018-03-01

Shot noise reveals spin dependent transport properties in a magnetic tunnel junction. We report measurement of shot noise in CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions, which shows a strong temperature dependence. The Fano factor used to characterize shot noise increases with decreasing temperature. A sequential tunneling model can be used to account for these results, in which a larger Fano factor results from larger spin relaxation length at lower temperatures.

Tunneling spin injection into single layer graphene.

Science.gov (United States)

Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

2010-10-15

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

Thermal stability of tunneling spin polarization

International Nuclear Information System (INIS)

Kant, C.H.; Kohlhepp, J.T.; Paluskar, P.V.; Swagten, H.J.M.; Jonge, W.J.M. de

2005-01-01

We present a study of the thermal stability of tunneling spin polarization in Al/AlOx/ferromagnet junctions based on the spin-polarized tunneling technique, in which the Zeeman-split superconducting density of states in the Al electrode is used as a detector for the spin polarization. Thermal robustness of the polarization, which is of key importance for the performance of magnetic tunnel junction devices, is demonstrated for post-deposition anneal temperatures up to 500 o C with Co and Co 90 Fe 10 top electrodes, independent of the presence of an FeMn layer on top of the ferromagnet

Spin-polarized scanning tunneling microscopy: breakthroughs and highlights.

Science.gov (United States)

Bode, Matthias

2012-01-01

The principle of scanning tunneling microscopy, an imaging method with atomic resolution capability invented by Binnig and Rohrer in 1982, can be adapted for surface magnetism studies by using magnetic probe tips. The contrast mechanism of this so-called spin-polarized scanning tunneling microscopy, or SP-STM, relies on the tunneling magneto-resistance effect, i.e. the tip-sample distance as well as the differential conductance depend on the relative magnetic orientation of tip and sample. To illustrate the working principle and the unique capabilities of SP-STM, this compilation presents some key experiments which have been performed on various magnetic surfaces, such as the topological antiferromagnet Cr(001), a double-layer of Fe which exhibits a stripe- domain pattern with about 50 nm periodicity, and the Mn monolayer on W(110), where the combination of experiment and theory reveal an antiferromagnetic spin cycloid. Recent experimental results also demonstrate the suitability of SP-STM for studies of dynamic properties, such as the spin relaxation time of single magnetic nanostructures.

Magnetoelectric coupling and spin-dependent tunneling in Fe/PbTiO3/Fe multiferroic heterostructure with a Ni monolayer inserted at one interface

International Nuclear Information System (INIS)

Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min

2015-01-01

We report on first-principles calculations of a Ni monolayer inserted at one interface in the epitaxial Fe/PbTiO 3 /Fe multiferroic heterostructure, focusing on the magnetoelectric coupling and the spin-dependent transport properties. The results of magnetoelectric coupling calculations reveal an attractive approach to realize cumulative magnetoelectric effects in the ferromagnetic/ferroelectric/ferromagnetic superlattices. The underlying physics is attributed to the combinations of several different magnetoelectric coupling mechanisms such as interface bonding, spin-dependent screening, and different types of magnetic interactions. We also demonstrate that inserting a Ni monolayer at one interface in the Fe/PbTiO 3 /Fe multiferroic tunnel junction is an efficient method to produce considerable tunneling electroresistance effect by modifying the tunnel potential barrier and the interfacial electronic structure. Furthermore, coexistence of tunneling magnetoresistance and tunneling electroresistance leads to the emergence of four distinct resistance states, which can be served as a multistate-storage device. The complicated influencing factors including bulk properties of the ferromagnetic electrodes, decay rates of the evanescent states in the tunnel barrier, and the specific interfacial electronic structure provide us promising opportunities to design novel multiferroic tunnel junctions with excellent performances

Spin dynamics in tunneling decay of a metastable state

OpenAIRE

Ban, Yue; Sherman, E. Ya.

2012-01-01

We analyze spin dynamics in the tunneling decay of a metastable localized state in the presence of spin-orbit coupling. We find that the spin polarization at short time scales is affected by the initial state while at long time scales both the probability- and the spin density exhibit diffraction-in-time phenomenon. We find that in addition to the tunneling time the tunneling in general can be characterized by a new parameter, the tunneling length. Although the tunneling length is independent...

Effect of Orbital Hybridization on Spin-Polarized Tunneling across Co/C60 Interfaces.

Science.gov (United States)

Wang, Kai; Strambini, Elia; Sanderink, Johnny G M; Bolhuis, Thijs; van der Wiel, Wilfred G; de Jong, Michel P

2016-10-26

The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C 60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an AlO x tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance (TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C 60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C 60 interface was found to be 43%.

Spin-dependent and photon-assisted transmission enhancement and suppression in a magnetic-field tunable ZnSe/Zn{sub 1–x}Mn{sub x}Se heterostructure

Energy Technology Data Exchange (ETDEWEB)

Li, Chun-Lei, E-mail: licl@cnu.edu.cn [Laboratory for Micro-sized Functional Materials, College of Elementary Education, Capital Normal University, Beijing 100048 (China); Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 (China); Yuan, Rui-Yang [Center for Theoretical Physics, Department of Physics, Capital Normal University, Beijing 100048 (China); Guo, Yong, E-mail: guoy66@tsinghua.edu.cn [Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

2016-01-07

Using the effective-mass approximation and Floquet theory, we theoretically investigate the terahertz photon-assisted transport through a ZnSe/Zn{sub 1−x}Mn{sub x}Se heterostructure under an external magnetic field, an electric field, and a spatially homogeneous oscillatory field. The results show that both amplitude and frequency of the oscillatory field can accurately manipulate the magnitude of the spin-dependent transmission probability and the positions of the Fano-type resonance due to photon absorption and emission processes. Transmission resonances can be enhanced to optimal resonances or drastically suppressed for spin-down electrons tunneling through the heterostructure and for spin-up ones tunneling through the same structure, resonances can also be enhanced or suppressed, but the intensity is less than the spin-down ones. Furthermore, it is important to note that transmission suppression can be clearly seen from both the spin-down component and the spin-up component of the current density at low magnetic field; at the larger magnetic field, however, the spin-down component is suppressed, and the spin-up component is enhanced. These interesting properties may provide an alternative method to develop multi-parameter modulation electron-polarized devices.

Electric dipole spin resonance in a quantum spin dimer system driven by magnetoelectric coupling

Science.gov (United States)

Kimura, Shojiro; Matsumoto, Masashige; Akaki, Mitsuru; Hagiwara, Masayuki; Kindo, Koichi; Tanaka, Hidekazu

2018-04-01

In this Rapid Communication, we propose a mechanism for electric dipole active spin resonance caused by spin-dependent electric polarization in a quantum spin gapped system. This proposal was successfully confirmed by high-frequency electron spin resonance (ESR) measurements of the quantum spin dimer system KCuCl3. ESR measurements by an illuminating linearly polarized electromagnetic wave reveal that the optical transition between the singlet and triplet states in KCuCl3 is driven by an ac electric field. The selection rule of the observed transition agrees with the calculation by taking into account spin-dependent electric polarization. We suggest that spin-dependent electric polarization is effective in achieving fast control of quantum spins by an ac electric field.

Spin-polarized tunneling with GaAs tips in scanning tunneling microscopy

NARCIS (Netherlands)

Prins, M.W.J.; Jansen, R.; Kempen, van H.

1996-01-01

We describe a model as well as experiments on spin-polarized tunneling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to generate

Magnetoelectric coupling and spin-dependent tunneling in Fe/PbTiO{sub 3}/Fe multiferroic heterostructure with a Ni monolayer inserted at one interface

Energy Technology Data Exchange (ETDEWEB)

Dai, Jian-Qing, E-mail: djqkust@sina.com; Zhang, Hu; Song, Yu-Min [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

2015-08-07

We report on first-principles calculations of a Ni monolayer inserted at one interface in the epitaxial Fe/PbTiO{sub 3}/Fe multiferroic heterostructure, focusing on the magnetoelectric coupling and the spin-dependent transport properties. The results of magnetoelectric coupling calculations reveal an attractive approach to realize cumulative magnetoelectric effects in the ferromagnetic/ferroelectric/ferromagnetic superlattices. The underlying physics is attributed to the combinations of several different magnetoelectric coupling mechanisms such as interface bonding, spin-dependent screening, and different types of magnetic interactions. We also demonstrate that inserting a Ni monolayer at one interface in the Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction is an efficient method to produce considerable tunneling electroresistance effect by modifying the tunnel potential barrier and the interfacial electronic structure. Furthermore, coexistence of tunneling magnetoresistance and tunneling electroresistance leads to the emergence of four distinct resistance states, which can be served as a multistate-storage device. The complicated influencing factors including bulk properties of the ferromagnetic electrodes, decay rates of the evanescent states in the tunnel barrier, and the specific interfacial electronic structure provide us promising opportunities to design novel multiferroic tunnel junctions with excellent performances.

Spin-frustrated V3 and Cu3 nanomagnets with Dzialoshinsky-Moriya exchange. 2. Spin structure, spin chirality and tunneling gaps

International Nuclear Information System (INIS)

Belinsky, Moisey I.

2009-01-01

The spin chirality and spin structure of the Cu 3 and V 3 nanomagnets with the Dzialoshinsky-Moriya (DM) exchange interaction are analyzed. The correlations between the vector κ and the scalar χ chirality are obtained. The DM interaction forms the spin chirality which is equal to zero in the Heisenberg clusters. The dependences of the spin chirality on magnetic field and deformations are calculated. The cluster distortions reduce the spin chirality. The vector chirality is reduced partially and the scalar chirality vanishes in the transverse magnetic field. In the isosceles clusters, the DM exchange and distortions determine the sign and degree of the spin chirality κ. The correlations between the chirality parameters κ n and the intensities of the EPR and INS transitions are obtained. The vector chirality κ n describes the spin chirality of the Cu 3 and V 3 nanomagnets, the scalar chirality describes the pseudoorbital moment of the DM cluster. It is shown that in the consideration of the DM exchange, the spin states DM mixing and tunneling gaps at level crossing fields depend on the coordinate system of the DM model. The calculations in the DM exchange models in the right-handed and left-handed frame show opposite magnetic behavior at the level crossing field and allow to explain the opposite schemes of the tunneling gaps and levels crossing, which have been obtained in different treatments. The results of the DM model in the right-handed frame are consistent with the results of the group-theoretical analysis, whereas the results in the left-handed frame are inconsistent with that. The correlations between the spin chirality of the ground state and tunneling gaps at the level crossing field are obtained for the equilateral and isosceles nanoclusters.

Search for Spin Filtering By Electron Tunneling Through Ferromagnetic EuS Barriers in Pbs

Science.gov (United States)

Figielski, T.; Morawski, A.; Wosinski, T.; Wrotek, S.; Makosa, A.; Lusakowska, E.; Story, T.; Sipatov, A. Yu.; Szczerbakow, A.; Grasza, K.;

Spin-dependent electrical transport in Fe-MgO-Fe heterostructures

Directory of Open Access Journals (Sweden)

A A Shokri

2016-09-01

Full Text Available In this paper, spin-dependent electrical transport properties are investigated in a single-crystal magnetic tunnel junction (MTJ which consists of two ferromagnetic Fe electrodes separated by an MgO insulating barrier. These properties contain electric current, spin polarization and tunnel magnetoresistance (TMR. For this purpose, spin-dependent Hamiltonian is described for Δ1 and Δ5 bands in the transport direction. The transmission is calculated by Green's function formalism based on a single-band tight-binding approximation. The transport properties are investigated as a function of the barrier thickness in the limit of coherent tunneling. We have demonstrated that dependence of the TMR on the applied voltage and barrier thickness. Our numerical results may be useful for designing of spintronic devices. The numerical results may be useful in designing of spintronic devices.

Electron spin resonance for the detection of long-range spin nematic order

Science.gov (United States)

Furuya, Shunsuke C.; Momoi, Tsutomu

2018-03-01

Spin nematic phase is a quantum magnetic phase characterized by a quadrupolar order parameter. Since the quadrupole operators are directly coupled to neither the magnetic field nor the neutron, currently, it is an important issue to develop a method for detecting the long-range spin nematic order. In this paper, we propose that electron spin resonance (ESR) measurements enable us to detect the long-range spin nematic order. We show that the frequency of the paramagnetic resonance peak in the ESR spectrum is shifted by the ferroquadrupolar order parameter together with other quantities. The ferroquadrupolar order parameter is extractable from the angular dependence of the frequency shift. In contrast, the antiferroquadrupolar order parameter is usually invisible in the frequency shift. Instead, the long-range antiferroquadrupolar order yields a characteristic resonance peak in the ESR spectrum, which we call a magnon-pair resonance peak. This resonance corresponds to the excitation of the bound magnon pair at the wave vector k =0 . Reflecting the condensation of bound magnon pairs, the field dependence of the magnon-pair resonance frequency shows a singular upturn at the saturation field. Moreover, the intensity of the magnon-pair resonance peak shows a characteristic angular dependence and it vanishes when the magnetic field is parallel to one of the axes that diagonalize the weak anisotropic interactions. We confirm these general properties of the magnon-pair resonance peak in the spin nematic phase by studying an S =1 bilinear-biquadratic model on the square lattice in the linear flavor-wave approximation. In addition, we argue applications to the S =1/2 frustrated ferromagnets and also the S =1/2 orthogonal dimer spin system SrCu2(BO3)2, both of which are candidate materials of spin nematics. Our theory for the antiferroquadrupolar ordered phase is consistent with many features of the magnon-pair resonance peak experimentally observed in the low

Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

Science.gov (United States)

Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

2018-03-01

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect.

Spin interference of neutrons tunneling through magnetic thin films

International Nuclear Information System (INIS)

Hino, Masahiro; Achiwa, Norio; Tasaki, Seiji; Ebisawa, Toru; Akiyoshi, Tsunekazu; Kawai, Takeshi.

1996-01-01

Larmor precession of a neutron spin is represented as the superposition of the wave functions of the two Stern-Gerlach states ↑ and ↓. A transverse neutron spin echo (NSE) spectrometer can hence be used as a neutron spin interferometer (NSI) by setting a magnetic film, such as iron and permalloy45 (Fe 55 Ni 45 ), thin enough to permit tunneling at an incident angle above and below the critical angle of the total reflection in the Larmor precession field. The NSI can be used to study spin coherent superposition and rotation of the Larmor precession through a magnetic thin film for a tunneling ↑ spin neutron and a non-tunneling ↓ spin neutron and to get the tunneling time using Larmor clock. The NSI experiments were carried out to measure the shifts of NSE signals transmitted through magnetic iron films with thicknesses of 200 and 400 A and those magnetic permalloy45 films with thicknesses of 200 and 400 A, respectively, as a function of the incident angle. Then even in tunneling ↑ spin neutron and non-tunneling ↓ spin neutron, NSE signal was observed. The phase delay was measured in iron and permalloy45 films with thickness of 200 A, and the tunneling time using Larmor clock was estimated to be 4 ± 0.6 x 10 -9 sec. (author)

Tunnel spin polarization versus energy for clean and doped Al2O3 barriers

NARCIS (Netherlands)

Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

2007-01-01

The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

Tunnel Spin Polarization Versus Energy for Clean and Doped Al2O3 Barriers

NARCIS (Netherlands)

Park, B.G.; Banerjee, T.; Lodder, J.C.; Jansen, R.

2007-01-01

The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the

Spin polarization at the interface and tunnel magnetoresistance

International Nuclear Information System (INIS)

Itoh, H.; Inoue, J.

2001-01-01

We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

Theory of high-resolution tunneling spin transport on a magnetic skyrmion

Science.gov (United States)

Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

2018-05-01

Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque, are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport vectors is demonstrated that enables the estimation of tunneling spin transport properties based on experimentally measured SP-STM images. A considerable tunability of the spin transport vectors by the involved spin polarizations is also highlighted. These possibilities and the combined theory of tunneling charge and vector spin transport pave the way for gaining deep insight into electric-current-induced tunneling spin transport properties in SP-STM and to the related dynamics of complex magnetic textures at surfaces.

Spin-polarizated transmissivity in an asymmetrical double barrier

International Nuclear Information System (INIS)

Teixeira, J D S; Frota, H O; Bittencourt, A C R

2014-01-01

The spin-polarized electron resonant tunnelling at zero magnetic field through a double barrier heterostructure like InAs/GaSb/InAs/GaSb/InAs has been calculated as a function of the electron energy. A model is proposed to study the combined effects of Dresselhaus and in-plane Rashba spin-orbit interactions on the spin-dependent tunnelling, taking into account the k 3 dependence of the Dresselhaus Hamiltonian. For the directions ϕ=45 ∘ and 135 ∘ the spin mixing produces a 100% efficiency of polarization. Moreover, the effect of the Dresselhaus and Rashba spin-orbit interactions are shown to be quite favorable for the fabrication of spin filters and spintronic devices. (paper)

Temperature dependence of the cosphi conductance in Josephson tunnel junctions determined from plasma resonance experiments

DEFF Research Database (Denmark)

Pedersen, Niels Falsig; Sørensen, O. H.; Mygind, Jesper

1978-01-01

The microwave response at 9 GHz of Sn-O-Sn tunnel-junction current biased at zero dc voltage has been measured just below the critical temperature Tc of the Sn films. The temperature dependence of the cosφ conductance is determined from the resonant response at the junction plasma frequency fp...

Unexpected enhancements and reductions of rf spin resonance strengths

Directory of Open Access Journals (Sweden)

M. A. Leonova

2006-05-01

Full Text Available We recently analyzed all available data on spin-flipping stored beams of polarized protons, electrons, and deuterons. Fitting the modified Froissart-Stora equation to the measured polarization data after crossing an rf-induced spin resonance, we found 10–20-fold deviations from the depolarizing resonance strength equations used for many years. The polarization was typically manipulated by linearly sweeping the frequency of an rf dipole or rf solenoid through an rf-induced spin resonance; spin-flip efficiencies of up to 99.9% were obtained. The Lorentz invariance of an rf dipole’s transverse ∫Bdl and the weak energy dependence of its spin resonance strength E together imply that even a small rf dipole should allow efficient spin flipping in 100 GeV or even TeV storage rings; thus, it is important to understand these large deviations. Therefore, we recently studied the resonance strength deviations experimentally by varying the size and vertical betatron tune of a 2.1  GeV/c polarized proton beam stored in COSY. We found no dependence of E on beam size, but we did find almost 100-fold enhancements when the rf spin resonance was near an intrinsic spin resonance.

New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

Energy Technology Data Exchange (ETDEWEB)

Sander, Dirk, E-mail: sander@mpi-halle.de [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany); Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany)

2013-08-15

Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center.

New insights into nano-magnetism by spin-polarized scanning tunneling microscopy

International Nuclear Information System (INIS)

Sander, Dirk; Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen

2013-01-01

Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center

Asymmetric angular dependence of spin-transfer torques in CoFe/Mg-B-O/CoFe magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Tang, Ling, E-mail: lingtang@zjut.edu.cn; Xu, Zhi-Jun, E-mail: xzj@zjut.edu.cn; Zuo, Xian-Jun; Yang, Ze-Jin, E-mail: zejinyang@zjut.edu.cn [Department of Applied Physics, College of Science, Zhejiang University of Technology, Hangzhou 310023 (China); Gao, Qing-He [College of Science, Northeastern University, Shenyang 110004, China, Information Engineering College, Liaoning University of Traditional Chinese Medicine, Shenyang 110847 (China); Linghu, Rong-Feng, E-mail: linghu@gznu.edu.cn [School of Physics and Electronics Sciences, Guizhou Education University, Guiyang 550018 (China); Guo, Yun-Dong, E-mail: g308yd@126.com [College of Engineering and Technology, Neijiang Normal University, Neijiang 641112 (China)

2016-04-28

Using a first-principles noncollinear wave-function-matching method, we studied the spin-transfer torques (STTs) in CoFe/Mg-B-O/CoFe(001) magnetic tunnel junctions (MTJs), where three different types of B-doped MgO in the spacer are considered, including B atoms replacing Mg atoms (Mg{sub 3}BO{sub 4}), B atoms replacing O atoms (Mg{sub 4}BO{sub 3}), and B atoms occupying interstitial positions (Mg{sub 4}BO{sub 4}) in MgO. A strong asymmetric angular dependence of STT can be obtained both in ballistic CoFe/Mg{sub 3}BO{sub 4} and CoFe/Mg{sub 4}BO{sub 4} based MTJs, whereas a nearly symmetric STT curve is observed in the junctions based on CoFe/Mg{sub 4}BO{sub 3}. Furthermore, the asymmetry of the angular dependence of STT can be suppressed significantly by the disorder of B distribution. Such skewness of STTs in the CoFe/Mg-B-O/CoFe MTJs could be attributed to the interfacial resonance states induced by the B diffusion into MgO spacer.

Physics of optimal resonant tunneling

NARCIS (Netherlands)

Racec, P.N.; Stoica, T.; Popescu, C.; Lepsa, M.I.; Roer, van de T.G.

1997-01-01

The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier resonant-tunneling (DBRT) structure, is discussed. It is shown that its physics does not rest on the departure from the constant potential within the barriers and well, due to the applied electric

Manifestation of spin selection rules on the quantum tunneling of magnetization in a single-molecule magnet.

Science.gov (United States)

Henderson, J J; Koo, C; Feng, P L; del Barco, E; Hill, S; Tupitsyn, I S; Stamp, P C E; Hendrickson, D N

2009-07-03

We present low temperature magnetometry measurements on a new Mn3 single-molecule magnet in which the quantum tunneling of magnetization (QTM) displays clear evidence for quantum mechanical selection rules. A QTM resonance appearing only at high temperatures demonstrates tunneling between excited states with spin projections differing by a multiple of three. This is dictated by the C3 molecular symmetry, which forbids pure tunneling from the lowest metastable state. Transverse field resonances are understood by correctly orienting the Jahn-Teller axes of the individual manganese ions and including transverse dipolar fields. These factors are likely to be important for QTM in all single-molecule magnets.

Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets

Science.gov (United States)

Min, Byoung-Chul; Motohashi, Kazunari; Lodder, Cock; Jansen, Ron

2006-10-01

Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance-area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

KAUST Repository

Chshiev, M.

2015-09-21

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2×2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

Spin polarized tunnelling investigation of nanometre Co clusters by means of a Ni bulk tip

International Nuclear Information System (INIS)

Rastei, M V; Bucher, J P

2006-01-01

A massive Ni tip is used in spin polarized scanning tunnelling microscopy (SP STM) to explore the magnetization state of nanometre Co clusters, self-organized on the Au(111) surface. Constant current STM images taken at 4.6 K show a bimodal distribution of the cluster heights, accounting for the spin polarization of the STM junction. The spin polarization of the tunnel junction as a function of the bias voltage is found to depend on the local density of states of the sample examined. Changing the vacuum barrier parameters by bringing the tip closer to the surface leads to a reduction in the tunnelling magnetoresistance that may be attributed to spin flip effects. (letter to the editor)

Spin-polarized inelastic tunneling through insulating barriers.

Science.gov (United States)

Lu, Y; Tran, M; Jaffrès, H; Seneor, P; Deranlot, C; Petroff, F; George, J-M; Lépine, B; Ababou, S; Jézéquel, G

2009-05-01

Spin-conserving hopping transport through chains of localized states has been evidenced by taking benefit of the high degree of spin-polarization of CoFeB-MgO-CoFeB magnetic tunnel junctions. In particular, our data show that relatively thick MgO barriers doped with boron favor the activation of spin-conserving inelastic channels through a chain of three localized states and leading to reduced magnetoresistance effects. We propose an extension of the Glazman-Matveev theory to the case of ferromagnetic reservoirs to account for spin-polarized inelastic tunneling through nonmagnetic localized states embedded in an insulating barrier.

Spin-polarized scanning-tunneling probe for helical Luttinger liquids.

Science.gov (United States)

Das, Sourin; Rao, Sumathi

2011-06-10

We propose a three-terminal spin-polarized STM setup for probing the helical nature of the Luttinger liquid edge state that appears in the quantum spin Hall system. We show that the three-terminal tunneling conductance depends on the angle (θ) between the magnetization direction of the tip and the local orientation of the electron spin on the edge while the two terminal conductance is independent of this angle. We demonstrate that chiral injection of an electron into the helical Luttinger liquid (when θ is zero or π) is associated with fractionalization of the spin of the injected electron in addition to the fractionalization of its charge. We also point out a spin current amplification effect induced by the spin fractionalization.

Theory of high-resolution tunneling spin transport on a magnetic skyrmion

OpenAIRE

Palotás, Krisztián; Rózsa, Levente; Szunyogh, László

2018-01-01

Tunneling spin transport characteristics of a magnetic skyrmion are described theoretically in magnetic scanning tunneling microscopy (STM). The spin-polarized charge current in STM (SP-STM) and tunneling spin transport vector quantities, the longitudinal spin current and the spin transfer torque are calculated in high spatial resolution within the same theoretical framework. A connection between the conventional charge current SP-STM image contrasts and the magnitudes of the spin transport v...

Perpendicular magnetic anisotropy influence on voltage-driven spin-diode effect in magnetic tunnel junctions: A micromagnetic study

Energy Technology Data Exchange (ETDEWEB)

Frankowski, Marek, E-mail: mfrankow@agh.edu.pl [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); Chȩciński, Jakub [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland); AGH University of Science and Technology, al. Mickiewicza 30, Faculty of Physics and Applied Computer Science, 30-059 Kraków (Poland); Skowroński, Witold; Stobiecki, Tomasz [AGH University of Science and Technology, al. Mickiewicza 30, Department of Electronics, 30-059 Kraków (Poland)

2017-05-01

We study the influence of the perpendicular magnetic anisotropy on the voltage-induced ferromagnetic resonance in magnetic tunnel junctions (MTJs). An MTJ response to the applied radio-frequency voltage excitation is investigated using micromagnetic calculations with the free layer oriented both in-plane and out-of-plane. Our model allows for a quantitative description of the magnetic system parameters such as resonance frequency, sensitivity or quality factor and for a distinction between material-dependent internal damping and disorder-dependent effective damping. We find that the sensitivity abruptly increases up to three orders of magnitude near the anisotropy transition regime, while the quality factor declines due to effective damping increase. We attribute the origin of this behaviour to the changes of the exchange energy in the system, which is calculated using micromagnetic approach. - Highlights: • Micromagnetic approach is used for modelling of voltage-induced spin-diode effect. • Voltage-induced switching simulations are performed. • Spin-diode line is analyzed as a function of perpendicular anisotropy energy. • Effective damping, quality factor and sensitivity are calculated.

Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

Energy Technology Data Exchange (ETDEWEB)

Kobayashi, T., E-mail: t.kobayashi@unsw.edu.au; Heijden, J. van der; House, M. G.; Hile, S. J.; Asshoff, P.; Simmons, M. Y.; Rogge, S. [Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney 2052 New South Wales (Australia); Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Vinet, M. [Université Grenoble-Alpes and CEA, LETI, MINATEC, 38000 Grenoble (France)

2016-04-11

We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO{sub 2} interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.

Electron-spin polarization in tunnel junctions with ferromagnetic EuS barriers

International Nuclear Information System (INIS)

Hao, X.; Moodera, J.S.; Meservey, R.

1989-01-01

The authors report here spin-polarized tunneling experiments using non-ferromagnetic electrodes and ferromagnetic EuS barriers. Because of the conduction band in EuS splits into spin-up and spin-down subbands when the temperature is below 16.7 K, the Curie temperature of EuS, the tunnel barrier for electrons with different spin directions is different, therefore giving rise to tunnel current polarization. The spin-filter effect, as it may be called, was observed earlier, directly or indirectly, by several groups: Esaki et al. made a tunneling study on junctions having EuS and EuSe barriers; Thompson et al. studied Schottky barrier tunneling between In and doped EuS; Muller et al. and Kisker et al. performed electron field emission experiments on EuS-coated tungsten tips. The field emission experiments gave a maximum polarization of (89 + 7)% for the emitted electrons. Although the previous tunneling studies did not directly show electron polarization, their results were explained by the same spin- filter effect. This work uses the spin-polarized tunneling technique to show directly that tunnel current is indeed polarized and polarization can be as high as 85%

Tunneling conductance of a two-dimensional electron gas with Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Srisongmuang, B.; Ka-oey, A.

2012-01-01

We theoretically studied the spin-dependent charge transport in a two-dimensional electron gas with Dresselhaus spin-orbit coupling (DSOC) and metal junctions. It is shown that the DSOC energy can be directly measured from the tunneling conductance spectrum. We found that spin polarization of the conductance in the propagation direction can be obtained by injecting from the DSOC system. We also considered the effect of the interfacial scattering barrier (both spin-flip and non-spin-flip scattering) on the overall conductance and the spin polarization of the conductance. It is found that the increase of spin-flip scattering can enhance the conductance under certain conditions. Moreover, both types of scattering can increase the spin polarization below the branches crossing of the energy band. - Highlights: → DSOC energy can be directly measured from tunneling conductance spectrum. → Spin polarization of conductance in the propagation direction can be obtained by injecting from DSOC system. → Both types of scattering can increase spin polarization.

Direct, coherent and incoherent intermediate state tunneling and scanning tunnel microscopy (STM)

International Nuclear Information System (INIS)

Halbritter, J.

1997-01-01

Theory and experiment in tunneling are still qualitative in nature, which hold true also for the latest developments in direct-, resonant-, coherent- and incoherent-tunneling. Those tunnel processes have recently branched out of the field of ''solid state tunnel junctions'' into the fields of scanning tunnel microscopy (STM), single electron tunneling (SET) and semiconducting resonant tunnel structures (RTS). All these fields have promoted the understanding of tunneling in different ways reaching from the effect of coherence, of incoherence and of charging in tunneling, to spin flip or inelastic effects. STM allows not only the accurate measurements of the tunnel current and its voltage dependence but, more importantly, the easy quantification via the (quantum) tunnel channel conductance and the distance dependence. This new degree of freedom entering exponentially the tunnel current allows an unique identification of individual tunnel channels and their quantification. In STM measurements large tunnel currents are observed for large distances d > 1 nm explainable by intermediate state tunneling. Direct tunneling with its reduced tunnel time and reduced off-site Coulomb charging bridges distances below 1 nm, only. The effective charge transfer process with its larger off-site and on-site charging at intermediate states dominates tunnel transfer in STM, biology and chemistry over distances in the nm-range. Intermediates state tunneling becomes variable range hopping conduction for distances larger than d > 2 nm, for larger densities of intermediate states n 1 (ε) and for larger temperatures T or voltages U, still allowing high resolution imaging

Study of the geometrical resonances of superconducting tunnel junctions

DEFF Research Database (Denmark)

Sørensen, O. Hoffmann; Finnegan, T.F.; Pedersen, Niels Falsig

1973-01-01

The resonant cavity structure of superconducting Sn-Sn-oxide-Sn tunnel junctions has been investigated via photon-assisted quasiparticle tunneling. We find that the temperature-dependent losses at 35 GHz are determined by the surface resistance of the Sn films for reduced temperatures between 0...

Spin tunnelling in mesoscopic systems

Indian Academy of Sciences (India)

We study spin tunnelling in molecular magnets as an instance of a mesoscopic phenomenon, with special emphasis on the molecule Fe8. We show that the tunnel splitting between various pairs of Zeeman levels in this molecule oscillates as a function of applied magnetic field, vanishing completely at special points in the ...

Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

Directory of Open Access Journals (Sweden)

Ahmed Kenawy

2017-05-01

Full Text Available The effect of molecular vibrations on the tunnel magnetoresistance (TMR of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at the same time to the charge of tunneling electrons and to the spin of the molecule, the spin anisotropy of such a molecule becomes enhanced. This has, in turn, a profound impact on the TMR of such a device showing that molecular vibrations lead to a significant change of spin-polarized transport, differing for the parallel and antiparallel magnetic configuration of the junction.

Spin-polarized spin excitation spectroscopy

International Nuclear Information System (INIS)

Loth, Sebastian; Lutz, Christopher P; Heinrich, Andreas J

2010-01-01

We report on the spin dependence of elastic and inelastic electron tunneling through transition metal atoms. Mn, Fe and Cu atoms were deposited onto a monolayer of Cu 2 N on Cu(100) and individually addressed with the probe tip of a scanning tunneling microscope. Electrons tunneling between the tip and the substrate exchange energy and spin angular momentum with the surface-bound magnetic atoms. The conservation of energy during the tunneling process results in a distinct onset threshold voltage above which the tunneling electrons create spin excitations in the Mn and Fe atoms. Here we show that the additional conservation of spin angular momentum leads to different cross-sections for spin excitations depending on the relative alignment of the surface spin and the spin of the tunneling electron. For this purpose, we developed a technique for measuring the same local spin with a spin-polarized and a non-spin-polarized tip by exchanging the last apex atom of the probe tip between different transition metal atoms. We derive a quantitative model describing the observed excitation cross-sections on the basis of an exchange scattering process.

Spin tunnelling in mesoscopic systems

Science.gov (United States)

Garg, Anupam

2001-02-01

We study spin tunnelling in molecular magnets as an instance of a mesoscopic phenomenon, with special emphasis on the molecule Fe8. We show that the tunnel splitting between various pairs of Zeeman levels in this molecule oscillates as a function of applied magnetic field, vanishing completely at special points in the space of magnetic fields, known as diabolical points. This phenomena is explained in terms of two approaches, one based on spin-coherent-state path integrals, and the other on a generalization of the phase integral (or WKB) method to difference equations. Explicit formulas for the diabolical points are obtained for a model Hamiltonian.

Role of spin polarized tunneling in magnetoresistance and low

Indian Academy of Sciences (India)

Role of spin polarized tunneling in magnetoresistance and low temperature minimum of polycrystalline La1–KMnO3 ( = 0.05, 0.1, ... Manganites; magnetoresistance; low temperature resistivity; spin polarized tunneling. ... Current Issue

Dynamics of spin-flip photon-assisted tunneling

NARCIS (Netherlands)

Braakman, F.R.; Danon, J.; Schreiber, L.R.; Wegscheider, W.; Vandersypen, L.M.K.

2014-01-01

We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit coupling is the dominant mechanism behind the spin-flip under

Evidence of a spin resonance mode in the iron-based superconductor Ba(0.6)K(0.4)Fe2As2 from scanning tunneling spectroscopy.

Science.gov (United States)

Shan, Lei; Gong, Jing; Wang, Yong-Lei; Shen, Bing; Hou, Xingyuan; Ren, Cong; Li, Chunhong; Yang, Huan; Wen, Hai-Hu; Li, Shiliang; Dai, Pengcheng

2012-06-01

We used high-resolution scanning tunneling spectroscopy to study the hole-doped iron pnictide superconductor Ba(0.6)K(0.4)Fe(2)As(2) (T(c)=38 K). Features of a bosonic excitation (mode) are observed in the measured quasiparticle density of states. The bosonic features are intimately associated with the superconducting order parameter and have a mode energy of ~14 meV, similar to the spin resonance measured by inelastic neutron scattering. These results indicate a strong electron-spin excitation coupling in iron pnictide superconductors, similar to that in high-T(c) copper oxide superconductors.

Effects of the electron-electron interaction in the spin resonance in 2D systems with Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Krishtopenko, S. S.

2015-01-01

The effect of the electron-electron interaction on the spin-resonance frequency in two-dimensional electron systems with Dresselhaus spin-orbit coupling is investigated. The oscillatory dependence of many-body corrections on the magnetic field is demonstrated. It is shown that the consideration of many-body interaction leads to a decrease or an increase in the spin-resonance frequency, depending on the sign of the g factor. It is found that the term cubic in quasimomentum in Dresselhaus spin-orbit coupling partially decreases exchange corrections to the spin resonance energy in a two-dimensional system

Effects of the electron-electron interaction in the spin resonance in 2D systems with Dresselhaus spin-orbit coupling

Energy Technology Data Exchange (ETDEWEB)

Krishtopenko, S. S., E-mail: sergey.krishtopenko@mail.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2015-02-15

The effect of the electron-electron interaction on the spin-resonance frequency in two-dimensional electron systems with Dresselhaus spin-orbit coupling is investigated. The oscillatory dependence of many-body corrections on the magnetic field is demonstrated. It is shown that the consideration of many-body interaction leads to a decrease or an increase in the spin-resonance frequency, depending on the sign of the g factor. It is found that the term cubic in quasimomentum in Dresselhaus spin-orbit coupling partially decreases exchange corrections to the spin resonance energy in a two-dimensional system.

Instantons and magnetization tunneling: Beyond the giant-spin approximation

International Nuclear Information System (INIS)

Florez, J.M.; Vargas, P.; Nunez, Alvaro S.

2009-01-01

In this work we show that commonly neglected fluctuations of the net total spin of a molecular nanomagnet strongly modified its tunneling properties and provide a scenario to explain some discrepancies between theory and experiment. Starting off from an effective spin Hamiltonian, we study the quantum tunneling of the magnetization of molecular nanomagnets in the regime where the giant-spin approximation is breaking down. This study is done using an instanton description of the tunneling path. The instanton is calculated considering its coupling to quantum fluctuations.

Destructive quantum interference in spin tunneling problems

OpenAIRE

von Delft, Jan; Henley, Christopher L.

1992-01-01

In some spin tunneling problems, there are several different but symmetry-related tunneling paths that connect the same initial and final configurations. The topological phase factors of the corresponding tunneling amplitudes can lead to destructive interference between the different paths, so that the total tunneling amplitude is zero. In the study of tunneling between different ground state configurations of the Kagom\\'{e}-lattice quantum Heisenberg antiferromagnet, this occurs when the spi...

Spin tunnelling dynamics for spin-1 Bose-Einstein condensates in a swept magnetic field

International Nuclear Information System (INIS)

Wang Guanfang; Fu Libin; Liu Jie

2008-01-01

We investigate the spin tunnelling of spin-1 Bose-Einstein condensates in a linearly swept magnetic field with a mean-field treatment. We focus on the two typical alkali Bose atoms 87 Rb and 23 Na condensates and study their tunnelling dynamics according to the sweep rates of the external magnetic fields. In the adiabatic (i.e. slowly sweeping) and sudden (i.e. fast sweeping) limits, no tunnelling is observed. For the case of moderate sweep rates, the tunnelling dynamics is found to be very sensitive to the sweep rates, so the plots of tunnelling probability versus sweep rate only become resolvable at a resolution of 10 -4 G s -1 . Moreover, a conserved quantity standing for the magnetization in experiments is found to affect dramatically the dynamics of the spin tunnelling. Theoretically we have given a complete interpretation of the above findings, and our studies could stimulate the experimental study of spinor Bose-Einstein condensates

Multiterminal semiconductor/ferromagnet probes for spin-filter scanning tunneling microscopy

NARCIS (Netherlands)

Vera Marun, I.J.; Jansen, R.

2009-01-01

We describe the fabrication of multiterminal semiconductor/ferromagnet probes for a new technique to study magnetic nanostructures: spin-filter scanning tunneling microscopy. We describe the principle of the technique, which is based on spin-polarized tunneling and subsequent analysis of the spin

Surface spin tunneling and heat dissipation in magnetic nanoparticles

Science.gov (United States)

Palakkal, Jasnamol P.; Obula Reddy, Chinna; Paulose, Ajeesh P.; Sankar, Cheriyedath Raj

2018-03-01

Quantum superparamagnetic state is observed in ultra-fine magnetic particles, which is often experimentally identified by a significant hike in magnetization towards low temperatures much below the superparamagnetic blocking temperature. Here, we report experimentally observed surface spin relaxation at low temperatures in hydrated magnesium ferrite nanoparticles of size range of about 5 nm. We observed time dependent oscillatory magnetization of the sample below 2.5 K, which is attributed to surface spin tunneling. Interestingly, we observed heat dissipation during the process by using an external thermometer.

Theory of single-spin inelastic tunneling spectroscopy.

Science.gov (United States)

Fernández-Rossier, J

2009-06-26

I show that recent experiments of inelastic scanning tunneling spectroscopy of single and a few magnetic atoms are modeled with a phenomenological spin-assisted tunneling Hamiltonian so that the inelastic dI/dV line shape is related to the spin spectral weight of the magnetic atom. This accounts for the spin selection rules and dI/dV spectra observed experimentally for single Fe and Mn atoms deposited on Cu2N. In the case of chains of Mn atoms it is found necessary to include both first and second-neighbor exchange interactions as well as single-ion anisotropy.

Analytical calculation of spin tunneling effect in single molecule magnet Fe8 with considering quadrupole excitation

OpenAIRE

Y Yousefi; H Fakhari; K Muminov; M R Benam

2018-01-01

Spin tunneling effect in Single Molecule Magnet Fe8 is studied by instanton calculation technique using SU(3) generalized spin coherent state in real parameter as a trial function. For this SMM, tunnel splitting arises due to the presence of a Berry like phase in action, which causes interference between tunneling trajectories (instantons). For this SMM, it is established that the use of quadrupole excitation (g dependence) changes not only the location of the quenching points, but also the n...

Spin-dependent Goos–Hänchen shift and spin beam splitter in gate-controllable ferromagnetic graphene

Energy Technology Data Exchange (ETDEWEB)

Wang, Y. [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Liu, Y., E-mail: stslyl@mail.sysu.edu.cn [School of Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Wang, B., E-mail: wangbiao@mail.sysu.edu.cn [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

2014-03-15

The transmission and Goos–Hänchen (GH) shift for charge carriers in gate-controllable ferromagnetic graphene induced by ferromagnetic insulator are investigated theoretically. Numerical results demonstrate that spin-up and spin-down electrons exhibit remarkably different transmission and GH shifts. The spin-dependent GH shifts directly demonstrate the spin beam splitting effect, which can be controlled by the voltage of gate. We attribute the spin beam splitting effect to the combination of tunneling through potential barrier and Zeeman interaction from the magnetic field and the exchange proximity interaction between the ferromagnetic insulator and graphene. In view of the spin beam splitting effect and the spin-dependent GH shifts, the gate-controllable ferromagnetic graphene might be utilized to design spin beam splitter.

Spin-dependent Goos–Hänchen shift and spin beam splitter in gate-controllable ferromagnetic graphene

International Nuclear Information System (INIS)

Wang, Y.; Liu, Y.; Wang, B.

2014-01-01

The transmission and Goos–Hänchen (GH) shift for charge carriers in gate-controllable ferromagnetic graphene induced by ferromagnetic insulator are investigated theoretically. Numerical results demonstrate that spin-up and spin-down electrons exhibit remarkably different transmission and GH shifts. The spin-dependent GH shifts directly demonstrate the spin beam splitting effect, which can be controlled by the voltage of gate. We attribute the spin beam splitting effect to the combination of tunneling through potential barrier and Zeeman interaction from the magnetic field and the exchange proximity interaction between the ferromagnetic insulator and graphene. In view of the spin beam splitting effect and the spin-dependent GH shifts, the gate-controllable ferromagnetic graphene might be utilized to design spin beam splitter

Acoustic spin pumping in magnetoelectric bulk acoustic wave resonator

Directory of Open Access Journals (Sweden)

N. I. Polzikova

2016-05-01

Full Text Available We present the generation and detection of spin currents by using magnetoelastic resonance excitation in a magnetoelectric composite high overtone bulk acoustic wave (BAW resonator (HBAR formed by a Al-ZnO-Al-GGG-YIG-Pt structure. Transversal BAW drives magnetization oscillations in YIG film at a given resonant magnetic field, and the resonant magneto-elastic coupling establishes the spin-current generation at the Pt/YIG interface. Due to the inverse spin Hall effect (ISHE this BAW-driven spin current is converted to a dc voltage in the Pt layer. The dependence of the measured voltage both on magnetic field and frequency has a resonant character. The voltage is determined by the acoustic power in HBAR and changes its sign upon magnetic field reversal. We compare the experimentally observed amplitudes of the ISHE electrical field achieved by our method and other approaches to spin current generation that use surface acoustic waves and microwave resonators for ferromagnetic resonance excitation, with the theoretically expected values.

Acoustic spin pumping in magnetoelectric bulk acoustic wave resonator

Energy Technology Data Exchange (ETDEWEB)

Polzikova, N. I., E-mail: polz@cplire.ru; Alekseev, S. G.; Pyataikin, I. I.; Kotelyanskii, I. M.; Luzanov, V. A.; Orlov, A. P. [Kotel’nikov Institute of Radio Engineering and Electronics of Russian Academy of Sciences, Mokhovaya 11, building 7, Moscow, 125009 (Russian Federation)

2016-05-15

We present the generation and detection of spin currents by using magnetoelastic resonance excitation in a magnetoelectric composite high overtone bulk acoustic wave (BAW) resonator (HBAR) formed by a Al-ZnO-Al-GGG-YIG-Pt structure. Transversal BAW drives magnetization oscillations in YIG film at a given resonant magnetic field, and the resonant magneto-elastic coupling establishes the spin-current generation at the Pt/YIG interface. Due to the inverse spin Hall effect (ISHE) this BAW-driven spin current is converted to a dc voltage in the Pt layer. The dependence of the measured voltage both on magnetic field and frequency has a resonant character. The voltage is determined by the acoustic power in HBAR and changes its sign upon magnetic field reversal. We compare the experimentally observed amplitudes of the ISHE electrical field achieved by our method and other approaches to spin current generation that use surface acoustic waves and microwave resonators for ferromagnetic resonance excitation, with the theoretically expected values.

Spin-wave thermal population as temperature probe in magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Le Goff, A., E-mail: adrien.le-goff@u-psud.fr; Devolder, T. [Institut d' Electronique Fondamentale, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 91405 Orsay (France); Nikitin, V. [SAMSUNG Electronics Corporation, 601 McCarthy Blvd Milpitas, California 95035 (United States)

2016-07-14

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm{sup 2} nanopillars. We apply hard axis (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.

Spin-Polarization in Quasi-Magnetic Tunnel Junctions

Science.gov (United States)

Xie, Zheng-Wei; Li, Ling

2017-05-01

Spin polarization in ferromagnetic metal/insulator/spin-filter barrier/nonmagnetic metal, referred to as quasi-magnetic tunnel junctions, is studied within the free-electron model. Our results show that large positive or negative spin-polarization can be obtained at high bias in quasi-magnetic tunnel junctions, and within large bias variation regions, the degree of spin-polarization can be linearly tuned by bias. These linear variation regions of spin-polarization with bias are influenced by the barrier thicknesses, barrier heights and molecular fields in the spin-filter (SF) layer. Among them, the variations of thickness and heights of the insulating and SF barrier layers have influence on the value of spin-polarization and the linear variation regions of spin-polarization with bias. However, the variations of molecular field in the SF layer only have influence on the values of the spin-polarization and the influences on the linear variation regions of spin-polarization with bias are slight. Supported by the Key Natural Science Fund of Sichuan Province Education Department under Grant Nos 13ZA0149 and 16ZA0047, and the Construction Plan for Scientific Research Innovation Team of Universities in Sichuan Province under Grant No 12TD008.

Shape Biased Low Power Spin Dependent Tunneling Magnetic Field Sensors

Science.gov (United States)

Tondra, Mark; Qian, Zhenghong; Wang, Dexin; Nordman, Cathy; Anderson, John

2001-10-01

Spin Dependent Tunneling (SDT) devices are leading candidates for inclusion in a number of Unattended Ground Sensor applications. Continued progress at NVE has pushed their performance to 1OOs of pT I rt. Hz 1 Hz. However, these sensors were designed to use an applied field from an on-chip coil to create an appropriate magnetic sensing configuration. The power required to generate this field (^100mW) is significantly greater than the power budget (^lmW) for a magnetic sensor in an Unattended Ground Sensor (UGS) application. Consequently, a new approach to creating an ideal sensing environment is required. One approach being used at NVE is "shape biasing." This means that the physical layout of the SDT sensing elements is such that the magnetization of the sensing film is correct even when no biasing field is applied. Sensors have been fabricated using this technique and show reasonable promise for UGS applications. Some performance trade-offs exist. The power is easily tinder 1 MW, but the sensitivity is typically lower by a factor of 10. This talk will discuss some of the design details of these sensors as well as their expected ultimate performance.

Dephasing due to Nuclear Spins in Large-Amplitude Electric Dipole Spin Resonance.

Science.gov (United States)

Chesi, Stefano; Yang, Li-Ping; Loss, Daniel

2016-02-12

We analyze effects of the hyperfine interaction on electric dipole spin resonance when the amplitude of the quantum-dot motion becomes comparable or larger than the quantum dot's size. Away from the well-known small-drive regime, the important role played by transverse nuclear fluctuations leads to a Gaussian decay with characteristic dependence on drive strength and detuning. A characterization of spin-flip gate fidelity, in the presence of such additional drive-dependent dephasing, shows that vanishingly small errors can still be achieved at sufficiently large amplitudes. Based on our theory, we analyze recent electric dipole spin resonance experiments relying on spin-orbit interactions or the slanting field of a micromagnet. We find that such experiments are already in a regime with significant effects of transverse nuclear fluctuations and the form of decay of the Rabi oscillations can be reproduced well by our theory.

Effect of quantum tunneling on spin Hall magnetoresistance.

Science.gov (United States)

Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

2017-02-22

We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

Spin-dependent transport through interacting graphene armchair nanoribbons

International Nuclear Information System (INIS)

Koller, Sonja; Mayrhofer, Leonhard; Grifoni, Milena

2010-01-01

We investigate spin effects in transport across fully interacting, finite-size graphene armchair nanoribbons (ACNs) contacted to collinearly spin-polarized leads. In such systems, the presence of short-range Coulomb interaction between bulk states and states localized at the ribbon ends leads to novel spin-dependent phenomena. Specifically, the total spin of the low-energy many-body states is conserved during tunneling but that of the bulk and end states is not. As a consequence, in the single-electron regime, dominated by Coulomb blockade phenomena, we find pronounced negative differential conductance features for ACNs contacted to parallel polarized leads. These features are, however, absent in an anti-parallel contact configuration, which in turn leads, within a certain gate and bias voltage region, to a negative tunneling magneto-resistance. Moreover, we analyze the changes in the transport characteristics under the influence of an external magnetic field.

Resonant tunneling in a pulsed phonon field

DEFF Research Database (Denmark)

Kral, P.; Jauho, Antti-Pekka

1999-01-01

, The nonequilibrium spectral function for the resonance displays the formation and decay of the phonon sidebands on ultrashort time scales. The time-dependent tunneling current through the individual phonon satellites reflects this quasiparticle formation by oscillations, whose time scale is set by the frequency...

Four-state non-volatile memory in a multiferroic spin filter tunnel junction

Science.gov (United States)

Ruan, Jieji; Li, Chen; Yuan, Zhoushen; Wang, Peng; Li, Aidong; Wu, Di

2016-12-01

We report a spin filter type multiferroic tunnel junction with a ferromagnetic/ferroelectric bilayer barrier. Memory functions of a spin filter magnetic tunnel junction and a ferroelectric tunnel junction are combined in this single device, producing four non-volatile resistive states that can be read out in a non-destructive manner. This concept is demonstrated in a LaNiO3/Pr0.8Ca0.2MnO3/BaTiO3/La0.7Sr0.3MnO3 all-oxide tunnel junction. The ferromagnetic insulator Pr0.8Ca0.2MnO3 serves as the spin filter and the ferromagnetic metal La0.7Sr0.3MnO3 is the spin analyzer. The ferroelectric polarization reversal in the BaTiO3 barrier switches the tunneling barrier height to produce a tunneling electroresistance. The ferroelectric switching also modulates the spin polarization and the spin filtering efficiency in Pr0.8Ca0.2MnO3.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-01-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Voltage-driven versus current-driven spin torque in anisotropic tunneling junctions

KAUST Repository

Manchon, Aurelien

2011-10-01

Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T∥ M×(z× M)+T⊥ z× M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component T⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T∥ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed. © 2011 IEEE.

Partially spin-polarized Josephson tunneling between non-centrosymmetric superconductors like CePt3Si

International Nuclear Information System (INIS)

Mandal, S.S.; Mukherjee, S.P.

2007-01-01

Full text: The recent discovery of the superconductivity in the heavy fermionic compound CePt 3 Si have attracted much of the attention of the physics community. The presence of strong Rashba kind of spin-orbit coupling in them split the otherwise degenerate electronic band into two nondegenerate bands. This peculiarity in the band structure gives rise to complicated kind of order parameter whose exact nature is unknown till date. Traditionally Josephson junctions in superconductors draw interest both scientifically and its applicability in making devices. It has been used in several cases as a probe to the order parameter symmetry of the superconductor. It has also been studied in unconventional superconductors like spin-singlet cuprate and spin-triplet Sr 2 RuO 4 superconductors. However no Josephson junction between nonmagnetic superconductors is known to generate spin-polarized current. The purpose of this work is to theoretically show that the direction dependent tunneling matrix element across the junction between two recently discovered non-centrosymmetric superconductors like CePt 3 Si, leads to tunneling of both spin-singlet and spin-triplet Cooper pairs. As a consequence, nonvanishing spin-Josephson current is viable along with the usual charge-Josephson current. This novel spin-Josephson current depends on the relative angle xi between the axes of non-centrosymmetry {n} L and that {n} R in the left and right side of the junction respectively. This angular dependence may be used to make Josephson spin switch. (authors)

Resonant tunneling of electrons in quantum wires

International Nuclear Information System (INIS)

Krive, I.V.; Shekhter, R.I.; Jonson, M.; Krive, I.V.

2010-01-01

We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron-electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.

Tunneling effect of the spin-2 Bose condensate driven by external magnetic fields

International Nuclear Information System (INIS)

Yu Zhaoxian; Jiao Zhiyong

2004-01-01

In this Letter, we have studied tunneling effect of the spin-2 Bose condensate driven by external magnetic field. We find that the population transfers among spin-0 and spin-±1, spin-0 and spin-±2 exhibit the step structure under the external cosinusoidal magnetic field, respectively, but there do not exist step structure among spin-±1 and spin-±2. The tunneling current among spin-±1 and spin-±2 may exhibit periodically oscillation behavior, but among spin-0 and spin-±1, spin-0 and spin-±2, the tunneling currents exhibit irregular oscillation behavior

From epitaxial growth of ferrite thin films to spin-polarized tunnelling

International Nuclear Information System (INIS)

Moussy, Jean-Baptiste

2013-01-01

This paper presents a review of the research which is focused on ferrite thin films for spintronics. First, I will describe the potential of ferrite layers for the generation of spin-polarized currents. In the second step, the structural and chemical properties of epitaxial thin films and ferrite-based tunnel junctions will be presented. Particular attention will be given to ferrite systems grown by oxygen-assisted molecular beam epitaxy. The analysis of the structure and chemistry close to the interfaces, a key-point for understanding the spin-polarized tunnelling measurements, will be detailed. In the third part, the magnetic and magneto-transport properties of magnetite (Fe 3 O 4 ) thin films as a function of structural defects such as the antiphase boundaries will be explained. The spin-polarization measurements (spin-resolved photoemission, tunnel magnetoresistance) on this oxide predicted to be half-metallic will be discussed. Fourth, the potential of magnetic tunnel barriers, such as CoFe 2 O 4 , NiFe 2 O 4 or MnFe 2 O 4 , whose insulating behaviour and the high Curie temperatures make it exciting candidates for spin filtering at room temperature will be described. Spin-polarized tunnelling experiments, involving either Meservey–Tedrow or tunnel magnetoresistance measurements, will reveal significant spin-polarizations of the tunnelling current at low temperatures but also at room temperatures. Finally, I will mention a few perspectives with ferrite-based heterostructures. (topical review)

Joule heating and spin-transfer torque investigated on the atomic scale using a spin-polarized scanning tunneling microscope.

Science.gov (United States)

Krause, S; Herzog, G; Schlenhoff, A; Sonntag, A; Wiesendanger, R

2011-10-28

The influence of a high spin-polarized tunnel current onto the switching behavior of a superparamagnetic nanoisland on a nonmagnetic substrate is investigated by means of spin-polarized scanning tunneling microscopy. A detailed lifetime analysis allows for a quantification of the effective temperature rise of the nanoisland and the modification of the activation energy barrier for magnetization reversal, thereby using the nanoisland as a local thermometer and spin-transfer torque analyzer. Both the Joule heating and spin-transfer torque are found to scale linearly with the tunnel current. The results are compared to experiments performed on lithographically fabricated magneto-tunnel junctions, revealing a very high spin-transfer torque switching efficiency in our experiments.

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

Jimy Encomendero

2017-10-01

Full Text Available For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs, the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.

Transit time for resonant tunneling

International Nuclear Information System (INIS)

Garcia Calderon, G.; Rubio, A.

1990-09-01

This work considers properties of the partial widths in one dimensional elastic resonant tunneling in order to propose a transit-time τ tr = (h/2π)/Γ n T res ) where Γ n is the elastic width and T res the transmission coefficient at resonance energy. This time is interpreted as an average over the resonance energy width. It is shown that the tunneling current density integrated across a sharp resonance is inversely proportional to τ tr . This transit time may be much larger than the values predicted by other definitions. (author). 20 refs

Investigation of non-collinear spin states with scanning tunneling microscopy.

Science.gov (United States)

Wulfhekel, W; Gao, C L

2010-03-05

Most ferromagnetic and antiferromagnetic substances show a simple collinear arrangement of the local spins. Under certain circumstances, however, the spin configuration is non-collinear. Scanning tunneling microscopy with its potential atomic resolution is an ideal tool for investigating these complex spin structures. Non-collinearity can be due to topological frustration of the exchange interaction, due to relativistic spin-orbit coupling or can be found in excited states. Examples for all three cases are given, illustrating the capabilities of spin-polarized scanning tunneling microscopy.

Spin-dependent delay time and Hartman effect in asymmetrical graphene barrier under strain

Science.gov (United States)

Sattari, Farhad; Mirershadi, Soghra

2018-01-01

We study the spin-dependent tunneling time, including group delay and dwell time, in a graphene based asymmetrical barrier with Rashba spin-orbit interaction in the presence of strain, sandwiched between two normal leads. We find that the spin-dependent tunneling time can be efficiently tuned by the barrier width, and the bias voltage. Moreover, for the zigzag direction strain although the oscillation period of the dwell time does not change, the oscillation amplitude increases by increasing the incident electron angle. It is found that for the armchair direction strain unlike the zigzag direction the group delay time at the normal incidence depends on the spin state of electrons and Hartman effect can be observed. In addition, for the armchair direction strain the spin polarization increases with increasing the RSOI strength and the bias voltage. The magnitude and sign of spin polarization can be manipulated by strain. In particular, by applying an external electric field the efficiency of the spin polarization is improved significantly in strained graphene, and a fully spin-polarized current is generated.

Spins of adsorbed molecules investigated by the detection of Kondo resonance

Science.gov (United States)

Komeda, Tadahiro

2014-12-01

Surface magnetism has been one of the platforms to explore the magnetism in low dimensions. It is also a key component for the development of quantum information processes, which utilizes the spin degree of freedom. The Kondo resonance is a phenomenon that is caused by an interaction between an isolated spin and conduction electrons. First observed in the 1930s as an anomalous increase in the low-temperature resistance of metals embedded with magnetic atoms, the Kondo physics mainly studied the effects of bulk magnetic impurities in the resistivity. In the last 15 years it has undergone a revival by a scanning tunneling microscope (STM) which enables the measurement of the Kondo resonance at surfaces using an atomic scale point contact. The detection of the Kondo resonance can be a powerful tool to explore surface magnetism. In this article, I review recent studies of the surface spin of adsorbed molecules by the detection of the Kondo resonance. Researches on metal phthalocyanine (MPc) and porphyrin molecules will be examined. In addition, the Kondo resonance for double-decker lanthanoide Pc molecules will be discussed. Some of the double-decker Pc molecules show single-molecule magnet (SMM) behavior, which attracts attention as a material for electronic devices. For both classes, the ligand plays a crucial role in determining the parameters of the Kondo resonance, such as the Kondo temperature and the change of the shape from peak to Fano-dip. In addition, the spin in delocalized molecular orbital forms the Kondo resonance, which shows significant differences from the Kondo resonance formed by the metal spins. Since molecular orbital can be tuned in a flexible manner by the design of the molecule, the Kondo resonance formed by delocalized molecular orbital might expand the knowledge of this field.

Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

Energy Technology Data Exchange (ETDEWEB)

Liu, C.; Boyko, Y.; Geppert, C. C.; Christie, K. D.; Stecklein, G.; Crowell, P. A., E-mail: crowell@physics.umn.edu [School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Patel, S. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Palmstrøm, C. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-11-24

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

Robust upward dispersion of the neutron spin resonance in the heavy fermion superconductor Ce1−xYbxCoIn5

Science.gov (United States)

Song, Yu; Van Dyke, John; Lum, I. K.; White, B. D.; Jang, Sooyoung; Yazici, Duygu; Shu, L.; Schneidewind, A.; Čermák, Petr; Qiu, Y.; Maple, M. B.; Morr, Dirk K.; Dai, Pengcheng

2016-01-01

The neutron spin resonance is a collective magnetic excitation that appears in the unconventional copper oxide, iron pnictide and heavy fermion superconductors. Although the resonance is commonly associated with a spin-exciton due to the d(s±)-wave symmetry of the superconducting order parameter, it has also been proposed to be a magnon-like excitation appearing in the superconducting state. Here we use inelastic neutron scattering to demonstrate that the resonance in the heavy fermion superconductor Ce1−xYbxCoIn5 with x=0, 0.05 and 0.3 has a ring-like upward dispersion that is robust against Yb-doping. By comparing our experimental data with a random phase approximation calculation using the electronic structure and the momentum dependence of the -wave superconducting gap determined from scanning tunnelling microscopy (STM) for CeCoIn5, we conclude that the robust upward-dispersing resonance mode in Ce1−xYbxCoIn5 is inconsistent with the downward dispersion predicted within the spin-exciton scenario. PMID:27677397

Doping dependent tunneling conductance in SDW ordered copper oxide superconductors

International Nuclear Information System (INIS)

Rout, G.C.; Panda, S.K.

2011-01-01

The model calculation reports the co-existences of s-wave superconductivity and spin density wave (SDW) in high-T c cuprates. The doping dependence of the phase diagram explains the experimental observations qualitatively. The calculated tunneling spectra explains the observed multiple peak structures. This calculation provides an alternative to BCS formalism to calculate order parameters from the spectra. It is observed that doping suppresses the long range anti-ferromagnetic order and induces superconducting phase for a suitable doping. In order to study this effect, we present a model study of the doping dependence of the tunneling conductance in high-T c systems. The system is described by the Hamiltonian consisting of spin density wave (SDW) and s-wave type superconducting interaction in presence of varying impurity concentrations. The gap equations are calculated by using Green's functions technique of Zubarev. The gap equations and the chemical potential are solved self-consistently. The imaginary part of the electron Green's functions shows the quasi-particle density of states which represent the tunneling conductance observed by the scanning tunneling microscopy (STM). We investigate the effect of impurity on the gap equations as well as on the tunneling conductance. The results will be discussed based on the experimental observations.

Doping dependent tunneling conductance in SDW ordered copper oxide superconductors

Energy Technology Data Exchange (ETDEWEB)

Rout, G.C., E-mail: gcr@iopb.res.in [Condensed Matter Physics Group, Dept. of Applied Physics and Ballistics, F.M. University, 756 019 Balasore, Orissa (India); Panda, S K [K.D. Science College, Pochilima, Hinjilicut, 761 101 Ganjam, Orissa (India)

2011-07-15

The model calculation reports the co-existences of s-wave superconductivity and spin density wave (SDW) in high-T{sub c} cuprates. The doping dependence of the phase diagram explains the experimental observations qualitatively. The calculated tunneling spectra explains the observed multiple peak structures. This calculation provides an alternative to BCS formalism to calculate order parameters from the spectra. It is observed that doping suppresses the long range anti-ferromagnetic order and induces superconducting phase for a suitable doping. In order to study this effect, we present a model study of the doping dependence of the tunneling conductance in high-T{sub c} systems. The system is described by the Hamiltonian consisting of spin density wave (SDW) and s-wave type superconducting interaction in presence of varying impurity concentrations. The gap equations are calculated by using Green's functions technique of Zubarev. The gap equations and the chemical potential are solved self-consistently. The imaginary part of the electron Green's functions shows the quasi-particle density of states which represent the tunneling conductance observed by the scanning tunneling microscopy (STM). We investigate the effect of impurity on the gap equations as well as on the tunneling conductance. The results will be discussed based on the experimental observations.

Doping dependent tunneling conductance in SDW ordered copper oxide superconductors

Energy Technology Data Exchange (ETDEWEB)

Rout, G.C., E-mail: gcr@iopb.res.in [Condensed Matter Physics Group, Dept. of Applied Physics and Ballistics, F.M. University, 756 019 Balasore, Orissa (India); Panda, S.K. [K.D. Science College, Pochilima, Hinjilicut, 761 101 Ganjam, Orissa (India)

2011-07-15

The model calculation reports the co-existences of s-wave superconductivity and spin density wave (SDW) in high-T{sub c} cuprates. The doping dependence of the phase diagram explains the experimental observations qualitatively. The calculated tunneling spectra explains the observed multiple peak structures. This calculation provides an alternative to BCS formalism to calculate order parameters from the spectra. It is observed that doping suppresses the long range anti-ferromagnetic order and induces superconducting phase for a suitable doping. In order to study this effect, we present a model study of the doping dependence of the tunneling conductance in high-T{sub c} systems. The system is described by the Hamiltonian consisting of spin density wave (SDW) and s-wave type superconducting interaction in presence of varying impurity concentrations. The gap equations are calculated by using Green's functions technique of Zubarev. The gap equations and the chemical potential are solved self-consistently. The imaginary part of the electron Green's functions shows the quasi-particle density of states which represent the tunneling conductance observed by the scanning tunneling microscopy (STM). We investigate the effect of impurity on the gap equations as well as on the tunneling conductance. The results will be discussed based on the experimental observations.

A temperature dependent tunneling study of the spin density wave gap in EuFe2As2 single crystals.

Science.gov (United States)

Dutta, Anirban; Anupam; Hossain, Z; Gupta, Anjan K

2013-09-18

We report temperature dependent scanning tunneling microscopy and spectroscopy measurements on single crystals of EuFe2As2 in the 15-292 K temperature range. The in situ cleaved crystals show atomic terraces with homogeneous tunnel spectra that correlate well with the spin density wave (SDW) transition at a temperature, TSDW ≈ 186 K. Above TSDW the local tunnel spectra show a small depression in the density of states (DOS) near the Fermi energy (EF). The gap becomes more pronounced upon entering the SDW state with a gap value ∼90 meV at 15 K. However, the zero bias conductance remains finite down to 15 K indicating a finite DOS at the EF in the SDW phase. Furthermore, no noticeable change is observed in the DOS at the antiferromagnetic ordering transition of Eu(2+) moments at 19 K.

A new spin-functional MOSFET based on magnetic tunnel junction technology: pseudo-spin-MOSFET

OpenAIRE

Shuto, Yusuke; Nakane, Ryosho; Wang, Wenhong; Sukegawa, Hiroaki; Yamamoto, Shuu'ichirou; Tanaka, Masaaki; Inomata, Koichiro; Sugahara, Satoshi

2009-01-01

We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of spin-transistors. Device integration techniques for a bottom gate MOSFET using a silicon-on-insulator (SOI) substrate and for an MTJ with a full-Heusler alloy electrode and MgO tunnel barrier were developed. The fabricated PS-MOSFET exhibited high and low transconductanc...

Spin-polarized tunneling through a ferromagnetic insulator

NARCIS (Netherlands)

Kok, M.; Kok, M.; Beukers, J.N.; Brinkman, Alexander

2009-01-01

The polarization of the tunnel conductance of spin-selective ferromagnetic insulators is modeled, providing a generalized concept of polarization including both the effects of electrode and barrier polarization. The polarization model is extended to take additional non-spin-polarizing insulating

Spin tunneling in magnetic molecules: Quasisingular perturbations and discontinuous SU(2) instantons

Science.gov (United States)

Keçecioğlu, Ersin; Garg, Anupam

2003-02-01

Spin coherent state path integrals with discontinuous semiclassical paths are investigated with special reference to a realistic model for the magnetic degrees of freedom in the Fe8 molecular solid. It is shown that such paths are essential to a proper understanding of the phenomenon of quenched spin tunneling in these molecules. In the Fe8 problem, such paths are shown to arise as soon as a fourth-order anisotropy term in the energy is turned on, making this term a singular perturbation from the semiclassical point of view. The instanton approximation is shown to quantitatively explain the magnetic field dependence of the tunnel splitting, as well as agree with general rules for the number of quenching points allowed for a given value of spin. A fairly accurate approximate formula for the spacing between quenching points is derived.

Advanced Macro-Model with Pulse-Width Dependent Switching Characteristic for Spin Transfer Torque Based Magnetic-Tunnel-Junction Elements

Science.gov (United States)

Sojeong Kim,; Seungjun Lee,; Hyungsoon Shin,

2010-04-01

In spin transfer torque (STT)-based magnetic tunnel junction (MTJ), the switching depends on the current pulse-width as well as the magnitude of the switching current. We present an advanced macro-model of an STT-MTJ for a circuit simulator such as HSPICE. The macro-model can simulate the dependence of switching behavior on current pulse-width in an STT-MTJ. An imaginary resistor-capacitor (RC) circuit is adopted to emulate complex timing behavior which cannot be described nicely by existing functions in HSPICE. Simulation results show the resistance-current (R-I) curve and timing behavior is in good agreement with the experimental data.

Observation of spin-selective tunneling in SiGe nanocrystals.

Science.gov (United States)

Katsaros, G; Golovach, V N; Spathis, P; Ares, N; Stoffel, M; Fournel, F; Schmidt, O G; Glazman, L I; De Franceschi, S

2011-12-09

Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.

Modeling the neutron spin-flip process in a time-of-flight spin-resonance energy filter

CERN Document Server

Parizzi, A A; Klose, F

2002-01-01

A computer program for modeling the neutron spin-flip process in a novel time-of-flight (TOF) spin-resonance energy filter has been developed. The software allows studying the applicability of the device in various areas of spallation neutron scattering instrumentation, for example as a dynamic TOF monochromator. The program uses a quantum-mechanical approach to calculate the local spin-dependent spectra and is essential for optimizing the magnetic field profiles along the resonator axis. (orig.)

Coupled dynamics of interacting spin-1 bosons in a double-well potential

Science.gov (United States)

Carvalho, D. W. S.; Foerster, A.; Gusmão, M. A.

2018-03-01

We present a detailed analysis of dynamical processes involving two or three particles in a double-well potential. Motivated by experimental realizations of such a system with optically trapped cold atoms, we focus on spin-1 bosons with special attention on the effects of a spin-dependent interaction in addition to the usual Hubbard-like repulsive one. For a sufficiently weak tunneling amplitude in comparison to the dominant Hubbard coupling, particle motion is strongly correlated, occurring only under fine-tuned relationships between well-depth asymmetry and interactions. We highlight processes involving tunneling of coupled particle pairs and triads, emphasizing the role of the spin-dependent interaction in resonance conditions.

Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

KAUST Repository

Oh, Se Chung

2009-10-25

Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

KAUST Repository

Oh, Se Chung; Park, Seung Young; Manchon, Aurelien; Chshiev, Mairbek; Han, Jae Ho; Lee, Hyun Woo; Lee, Jang Eun; Nam, Kyung Tae; Jo, Younghun; Kong, Yo Chan; Dieny, Bernard; Lee, Kyung Jin

2009-01-01

Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

Robust spin transfer torque in antiferromagnetic tunnel junctions

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Waintal, Xavier; Manchon, Aurelien

2017-01-01

We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque

Neutron Spin Resonance in the 112-Type Iron-Based Superconductor

Science.gov (United States)

Xie, Tao; Gong, Dongliang; Ghosh, Haranath; Ghosh, Abyay; Soda, Minoru; Masuda, Takatsugu; Itoh, Shinichi; Bourdarot, Frédéric; Regnault, Louis-Pierre; Danilkin, Sergey; Li, Shiliang; Luo, Huiqian

2018-03-01

We use inelastic neutron scattering to study the low-energy spin excitations of the 112-type iron pnictide Ca0.82La0.18Fe0.96Ni0.04As2 with bulk superconductivity below Tc=22 K . A two-dimensional spin resonance mode is found around E =11 meV , where the resonance energy is almost temperature independent and linearly scales with Tc along with other iron-based superconductors. Polarized neutron analysis reveals the resonance is nearly isotropic in spin space without any L modulations. Because of the unique monoclinic structure with additional zigzag arsenic chains, the As 4 p orbitals contribute to a three-dimensional hole pocket around the Γ point and an extra electron pocket at the X point. Our results suggest that the energy and momentum distribution of the spin resonance does not directly respond to the kz dependence of the fermiology, and the spin resonance intrinsically is a spin-1 mode from singlet-triplet excitations of the Cooper pairs in the case of weak spin-orbital coupling.

Valley and spin resonant tunneling current in ferromagnetic/nonmagnetic/ferromagnetic silicene junction

Directory of Open Access Journals (Sweden)

Yaser Hajati

2016-02-01

Full Text Available We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.

Spin Tunneling in a Rotating Nanomagnet

Science.gov (United States)

O'Keeffe, Michael; Chudnovsky, Eugene; Lehman College Theoretical Condensed Matter Physics Team

2011-03-01

We study spin tunneling in a magnetic nanoparticle with biaxial anisotropy that is free to rotate about its anisotropy axis. Exact instanton of the coupled equations of motion is found that connects degenerate classical energy minima. We show that mechanical freedom of the particle renormalizes magnetic anisotropy and increases the tunnel splitting. M. F. O'Keeffe and E. M. Chudnovsky, cond-mat, arXiv:1011.3134.

Probing spin-polarized tunneling at high bias and temperature with a magnetic tunnel transistor

NARCIS (Netherlands)

Park, B.G.; Banerjee, T.; Min, B.C.; Sanderink, Johannes G.M.; Lodder, J.C.; Jansen, R.

2005-01-01

The magnetic tunnel transistor (MTT) is a three terminal hybrid device that consists of a tunnel emitter, a ferromagnetic (FM) base, and a semiconductor collector. In the MTT with a FM emitter and a single FM base, spin-polarized hot electrons are injected into the base by tunneling. After

Chiral tunneling of topological states: towards the efficient generation of spin current using spin-momentum locking.

Science.gov (United States)

Habib, K M Masum; Sajjad, Redwan N; Ghosh, Avik W

2015-05-01

We show that the interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D topological insulator (TI). Our calculations show that the chiral tunneling across a TI pn junction allows normally incident electrons to transmit, while the rest are reflected with their spins flipped due to spin-momentum locking. The net result is that the spin current is enhanced while the dissipative charge current is simultaneously suppressed, leading to an extremely large, gate-tunable spin-to-charge current ratio (∼20) at the reflected end. At the transmitted end, the ratio stays close to 1 and the electrons are completely spin polarized.

Photo-Detectors Integrated with Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

José M. L. Figueiredo

2013-07-01

Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

Phonon-magnon resonant processes with relevance to acoustic spin pumping

KAUST Repository

Deymier, P. A.

2014-12-23

The recently described phenomenon of resonant acoustic spin pumping is due to resonant coupling between an incident elastic wave and spin waves in a ferromagnetic medium. A classical one-dimensional discrete model of a ferromagnet with two forms of magnetoelastic coupling is treated to shed light on the conditions for resonance between phonons and magnons. Nonlinear phonon-magnon interactions in the case of a coupling restricted to diagonal terms in the components of the spin degrees of freedom are analyzed within the framework of the multiple timescale perturbation theory. In that case, one-phonon-two-magnon resonances are the dominant mechanism for pumping. The effect of coupling on the dispersion relations depends on the square of the amplitude of the phonon and magnon excitations. A straightforward analysis of a linear phonon-magnon interaction in the case of a magnetoelastic coupling restricted to off-diagonal terms in the components of the spins shows a one-phonon to one-magnon resonance as the pumping mechanism. The resonant dispersion relations are independent of the amplitude of the waves. In both cases, when an elastic wave with a fixed frequency is used to stimulate magnons, application of an external magnetic field can be used to approach resonant conditions. Both resonance conditions exhibit the same type of dependency on the strength of an applied magnetic field.

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

Science.gov (United States)

Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

2014-01-01

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene. PMID:25156685

Spin-Spin Cross Relaxation in Single-Molecule Magnets

Science.gov (United States)

Wernsdorfer, W.; Bhaduri, S.; Tiron, R.; Hendrickson, D. N.; Christou, G.

2002-10-01

The one-body tunnel picture of single-molecule magnets (SMMs) is not always sufficient to explain the measured tunnel transitions. An improvement to the picture is proposed by including also two-body tunnel transitions such as spin-spin cross relaxation (SSCR) which are mediated by dipolar and weak superexchange interactions between molecules. A Mn4 SMM is used as a model system. At certain external fields, SSCRs lead to additional quantum resonances which show up in hysteresis loop measurements as well-defined steps. A simple model is used to explain quantitatively all observed transitions.

Angular dependence of spin transfer torque on magnetic tunnel junctions with synthetic ferrimagnetic free layer

International Nuclear Information System (INIS)

Ichimura, M; Hamada, T; Imamura, H; Takahashi, S; Maekawa, S

2010-01-01

Based on a spin-polarized free-electron model, spin and charge transports are analyzed in magnetic tunnel junctions with synthetic ferrimagnetic layers in the ballistic regime, and the spin transfer torque is derived. We characterize the synthetic ferrimagnetic free layer by extending an arbitrary direction of magnetizations of the two free layers forming the synthetic ferrimagnetic free layer. The synthetic ferrimagnetic configuration exerts the approximately optimum torque for small magnetization angle of the first layer relative to that of the pinned layer. For approximately anti-parallel magnetization of the first layer to that of the pinned layer, the parallel magnetization of two magnetic layers is favorable for magnetization reversal rather than the synthetic ferrimagnetic configuration.

Resonant tunneling through double-barrier structures on graphene

International Nuclear Information System (INIS)

Deng Wei-Yin; Zhu Rui; Deng Wen-Ji; Xiao Yun-Chang

2014-01-01

Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tight-binding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schrödinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between the zigzag- and armchair-edge barriers is given. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Tunneling effect of the spin-2 Bose condensate driven by external magnetic fields

OpenAIRE

Yu, Zhao-xian; Jiao, Zhi-yong

2003-01-01

In this paper, we have studied tunneling effect of the spin-2 Bose condensate driven by external magnetic field. We find that the population transfers among spin-0 and spin-$\\pm1$, spin-0 and spin-$\\pm2$ exhibit the step structure under the external cosinusoidal magnetic field respectively, but there do not exist step structure among spin-$\\pm1$ and spin-$\\pm2$. The tunneling current among spin-$\\pm1$ and spin-$\\pm2$ may exhibit periodically oscillation behavior, but among spin-0 and spin-$\\p...

Current-voltage characteristics of a tunnel junction with resonant centers

International Nuclear Information System (INIS)

Ivanov, T.; Valtchinov, V.

1994-05-01

We calculated the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy E c between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures T is much less than E c the I-V characteristics is linear in V both for V c and for V>E c and changes slope at V=E c . This behaviour reflects the energy spectrum of the impurity electrons - the finite value of the charging energy E c . At T ∼ E c the junction reveals an ohmic-like behaviour as a result of the smearing out of the charging effects by the thermal fluctuations. (author). 10 refs, 2 figs

Spin dynamics and quantum tunneling in Fe8 nanomagnet and in AFM rings by NMR

Science.gov (United States)

Baek, Seung-Ho

In this thesis, our main interest has been to investigate the spin dynamics and quantum tunneling in single molecule magnets (SMMs). For this we have selected two different classes of SMMs: a ferromagnetic total high spin S = 10 cluster Fe8 and antiferromagnetic (AFM) ring-type clusters. For Fe8, our efforts have been devoted to the investigation of the quantum tunneling of magnetization in the very low temperature region. The most remarkable experimental finding in Fe8 is that the nuclear spin-lattice relaxation rate (1/T1) at low temperatures takes place via strong collision mechanism, and thus it allows to measure directly the tunneling rate vs. T and H for the first time. For AFM rings, we have shown that 1/T1 probes the thermal fluctuations of the magnetization in the intermediate temperature range. We find that the fluctuations are dominated by a single characteristic frequency which has a power-law T-dependence indicative of fluctuations due to electron-acoustic phonon interactions.

Spin Dynamics and Quantum Tunneling in Fe8 Nanomagnet and in AFM Rings by NMR

International Nuclear Information System (INIS)

Seung-Ho-Baek

2004-01-01

In this thesis, our main interest has been to investigate the spin dynamics and quantum tunneling in single molecule magnets (SMMs), For this we have selected two different classes of SMMs: a ferrimagnetic total high spin S = 10 cluster Fe8 and antiferromagnetic (AFM) ring-type clusters. For Fe8, our efforts have been devoted to the investigation of the quantum tunneling of magnetization in the very low temperature region. The most remarkable experimental finding in Fe8 is that the nuclear spin-lattice relaxation rate (1/T l ) at low temperatures takes place via strong collision mechanism, and thus it allows to measure directly the tunneling rate vs T and H for the first time. For AFM rings, we have shown that 1/T l probes the thermal fluctuations of the magnetization in the intermediate temperature range. We find that the fluctuations are dominated by a single characteristic frequency which has a power law T-dependence indicative of fluctuations due to electron-acoustic phonon interactions

Anomalous tunneling of collective excitations and effects of superflow in the polar phase of a spin-1 spinor Bose-Einstein condensate

International Nuclear Information System (INIS)

Watabe, Shohei; Ohashi, Yoji; Kato, Yusuke

2011-01-01

We investigate tunneling properties of collective modes in the polar phase of a spin-1 spinor Bose-Einstein condensate (BEC). This spinor BEC state has two kinds of gapless modes (i.e., Bogoliubov and spin-wave). Within the framework of mean-field theory at T=0, we show that these Goldstone modes exhibit perfect transmission in the low-energy limit. Their anomalous tunneling behavior still holds in the presence of superflow, except in the critical current state. In the critical current state, while the tunneling of Bogoliubov mode is accompanied by finite reflection, the spin wave still exhibits perfect transmission, unless the strengths of spin-dependent and spin-independent interactions take the same value. We discuss the relation between perfect transmission of a spin wave and underlying superfluidity through a comparison of wave functions of the spin wave and the condensate.

Quantum description of spin tunneling in magnetic molecules

Science.gov (United States)

Galetti, D.

2007-01-01

Starting from a phenomenological Hamiltonian originally written in terms of angular momentum operators we derive a new quantum angle-based Hamiltonian that allows for a discussion on the quantum spin tunneling. The study of the applicability of the present approach, carried out in calculations with a soluble quasi-spin model, shows that we are allowed to use our method in the description of physical systems such as the Mn12-acetate molecule, as well as the octanuclear iron cluster, Fe8, in a reliable way. With the present description the interpretation of the spin tunneling is seen to be direct, the spectra and energy barriers of those systems are obtained, and it is shown that they agree with the experimental ones.

Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve.

Science.gov (United States)

Ma, Jing-Min; Zhao, Jia; Zhang, Kai-Cheng; Peng, Ya-Jing; Chi, Feng

2011-03-28

Spin-dependent transport through a quantum-dot (QD) ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR) as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively.PACS numbers:

Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve

Directory of Open Access Journals (Sweden)

Ma Jing-Min

2011-01-01

Full Text Available Abstract Spin-dependent transport through a quantum-dot (QD ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively. PACS numbers:

Broadband electron spin resonance experiments using superconducting coplanar waveguides

Energy Technology Data Exchange (ETDEWEB)

Clauss, Conrad; Bogani, Lapo; Scheffler, Marc; Dressel, Martin [1. Physikalisches Institut, Universitaet Stuttgart (Germany); Bothner, Daniel; Koelle, Dieter; Kleiner, Reinhold [Physikalisches Institut - Experimentalphysik II and Center for Collective Quantum Phenomena in LISA+, Universitaet Tuebingen (Germany)

2012-07-01

In recent years superconducting coplanar devices operating at microwave/GHz frequencies are employed in more and more experimental studies. Here, we present electron spin resonance (ESR) experiments using a superconducting coplanar waveguide to provide the RF field to drive the spin flips. In contrast to conventional ESR studies this allows broadband frequency as well as magnetic field swept observation of the spin resonance. We show experimental data of the spin resonance of the organic radical NitPhoMe (2-(4'-methoxyphenyl)-4,4,5,5-tetra-methylimidazoline-1-oxyl-3-oxide) for frequencies in the range of 1 GHz to 40 GHz and corresponding magnetic fields up to 1.4 T (for g=2). In addition we show the temperature dependence of the ESR signals for temperatures up to 30 K, which is well above the critical temperature of the niobium superconductor.

On the temperature dependence of spin pumping in ferromagnet–topological insulator–ferromagnet spin valves

Directory of Open Access Journals (Sweden)

A.A. Baker

Full Text Available Topological insulators (TIs have a large potential for spintronic devices owing to their spin-polarized, counter-propagating surface states. Recently, we have investigated spin pumping in a ferromagnet–TI–ferromagnet structure at room temperature. Here, we present the temperature-dependent measurement of spin pumping down to 10 K, which shows no variation with temperature. Keywords: Topological insulator, Spin pumping, Spintronics, Ferromagnetic resonance

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

Science.gov (United States)

Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

2017-06-27

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness

International Nuclear Information System (INIS)

Wilczynski, M.

2011-01-01

Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes. - Research highlights: → The torque oscillates with the thickness of ferromagnetic layer. → Bias dependence of the torque changes with the layer thickness. → Bias dependence of the normal torque can be asymmetric.

Thermal stability study of the insulator layer in NiFe/CoFe/Al2O3/Co spin-dependent tunnel junction

International Nuclear Information System (INIS)

Liao, C.C.; Ho, C.H.; Huang, R.-T.; Chen, F.-R.; Kai, J.J.; Chen, L.-C.; Lin, M.-T.; Yao, Y.D.

2002-01-01

Spin-dependent tunnel junction, NiFe/CoFe/Al 2 O 3 /Co//Si, was fabricated to investigate the thermal stability induced diffusion behaviors. The interfacial diffusion causes the degradation of the ratio of the TMR, the enhancement of the switching field of the two magnetic electrodes, the thickness decrease of the insulator layer, and the increase of the interfacial roughness. The outward diffusion of oxygen from the insulator layer is faster than that of aluminum for samples annealed below 400 deg. C. The degradation of the ratio of TMR is attributed to the disturbance of the spin polarization in the magnetic layers, and the increase of the pinholes and spin-flip effect in the insulator layer. The relative roughness between the two interfaces of the insulator induces the surface magnetic dipoles, and hence, increases the switching field of the ferromagnetic electrodes

Inelastic scattering in resonant tunneling

DEFF Research Database (Denmark)

Wingreen, Ned S.; Jacobsen, Karsten Wedel; Wilkins, John W.

1989-01-01

The exact resonant-tunneling transmission probability for an electron interacting with phonons is presented in the limit that the elastic coupling to the leads is independent of energy. The phonons produce transmission sidebands but do not affect the integrated transmission probability or the esc......The exact resonant-tunneling transmission probability for an electron interacting with phonons is presented in the limit that the elastic coupling to the leads is independent of energy. The phonons produce transmission sidebands but do not affect the integrated transmission probability...

Influence of soliton distributions on the spin-dependent electronic ...

Indian Academy of Sciences (India)

Based on Su–Schrieffer–Heeger (SSH) Hamiltonian and using a generalized Green's function formalism, wecalculate the spin-dependent currents, the electronic transmission and tunnelling magnetoresistance (TMR). We found that the presence of a uniform distribution of the soliton centres along the molecular chain ...

Spin filtering through ferromagnetic BiMn O3 tunnel barriers

Science.gov (United States)

Gajek, M.; Bibes, M.; Barthélémy, A.; Bouzehouane, K.; Fusil, S.; Varela, M.; Fontcuberta, J.; Fert, A.

2005-07-01

We report on experiments of spin filtering through ultrathin single-crystal layers of the insulating and ferromagnetic oxide BiMnO3 (BMO). The spin polarization of the electrons tunneling from a gold electrode through BMO is analyzed with a counterelectrode of the half-metallic oxide La2/3Sr1/3MnO3 (LSMO). At 3K we find a 50% change of the tunnel resistances according to whether the magnetizations of BMO and LSMO are parallel or opposite. This effect corresponds to a spin-filtering efficiency of up to 22%. Our results thus show the potential of complex ferromagnetic insulating oxides for spin filtering and injection.

Photo-Induced Electron Spin Polarization in a Narrow Band Gap Semiconductor Nanostructure

International Nuclear Information System (INIS)

Peter, A. John; Lee, Chang Woo

2012-01-01

Photo-induced spin dependent electron transmission through a narrow gap InSb/InGa x Sb 1−x semiconductor symmetric well is theoretically studied using transfer matrix formulism. The transparency of electron transmission is calculated as a function of electron energy for different concentrations of gallium. Enhanced spin-polarized photon assisted resonant tunnelling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and compressed spin-polarization are observed. Our results show that Dresselhaus spin-orbit coupling is dominant for the photon effect and the computed polarization efficiency increases with the photon effect and the gallium concentration

Quantum tunneling resonant electron transfer process in Lorentzian plasmas

International Nuclear Information System (INIS)

Hong, Woo-Pyo; Jung, Young-Dae

2014-01-01

The quantum tunneling resonant electron transfer process between a positive ion and a neutral atom collision is investigated in nonthermal generalized Lorentzian plasmas. The result shows that the nonthermal effect enhances the resonant electron transfer cross section in Lorentzian plasmas. It is found that the nonthermal effect on the classical resonant electron transfer cross section is more significant than that on the quantum tunneling resonant charge transfer cross section. It is shown that the nonthermal effect on the resonant electron transfer cross section decreases with an increase of the Debye length. In addition, the nonthermal effect on the quantum tunneling resonant electron transfer cross section decreases with increasing collision energy. The variation of nonthermal and plasma shielding effects on the quantum tunneling resonant electron transfer process is also discussed

Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic g Factor.

Science.gov (United States)

Bogan, A; Studenikin, S A; Korkusinski, M; Aers, G C; Gaudreau, L; Zawadzki, P; Sachrajda, A S; Tracy, L A; Reno, J L; Hargett, T W

2017-04-21

Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/AlGaAs heterostructure with a single hole occupancy in each dot. The charging diagram of the device was mapped out using charge detection confirming that the single hole limit is reached. In that limit, a detailed study of the two-hole spin system was performed using high bias magnetotransport spectroscopy. In contrast to electron systems, the hole spin was found not to be conserved during interdot resonant tunneling. This allows one to fully map out the two-hole energy spectrum as a function of the magnitude and the direction of the external magnetic field. The heavy-hole g factor was extracted and shown to be strongly anisotropic, with a value of 1.45 for a perpendicular field and close to zero for an in-plane field as required for hybridizing schemes between spin and photonic quantum platforms.

Multiscale modeling of current-induced switching in magnetic tunnel junctions using ab initio spin-transfer torques

Science.gov (United States)

Ellis, Matthew O. A.; Stamenova, Maria; Sanvito, Stefano

2017-12-01

There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for nonvolatile memory devices. With the aim of analyzing potential materials for efficient current-operated magnetic junctions, we have developed a multi-scale methodology combining ab initio calculations of spin-transfer torque with large-scale time-dependent simulations using atomistic spin dynamics. In this work we introduce our multiscale approach, including a discussion on a number of possible schemes for mapping the ab initio spin torques into the spin dynamics. We demonstrate this methodology on a prototype Co/MgO/Co/Cu tunnel junction showing that the spin torques are primarily acting at the interface between the Co free layer and MgO. Using spin dynamics we then calculate the reversal switching times for the free layer and the critical voltages and currents required for such switching. Our work provides an efficient, accurate, and versatile framework for designing novel current-operated magnetic devices, where all the materials details are taken into account.

Resonant spin-flavor conversion of supernova neutrinos: Dependence on electron mole fraction

International Nuclear Information System (INIS)

Yoshida, Takashi; Takamura, Akira; Kimura, Keiichi; Yokomakura, Hidekazu; Kawagoe, Shio; Kajino, Toshitaka

2009-01-01

Detailed dependence of resonant spin-flavor (RSF) conversion of supernova neutrinos on electron mole fraction Y e is investigated. Supernova explosion forms a hot-bubble and neutrino-driven wind region of which electron mole fraction exceeds 0.5 in several seconds after the core collapse. When a higher resonance of the RSF conversion is located in the innermost region, flavor change of the neutrinos strongly depends on the sign of 1-2Y e . At an adiabatic high RSF resonance the flavor conversion of ν e ↔ν μ,τ occurs in Y e e >0.5 and inverted mass hierarchy. In other cases of Y e values and mass hierarchies, the conversion of ν e ↔ν μ,τ occurs. The final ν e spectrum is evaluated in the cases of Y e e >0.5 taking account of the RSF conversion. Based on the obtained result, time variation of the event number ratios of low ν e energy to high ν e energy is discussed. In normal mass hierarchy, an enhancement of the event ratio should be seen in the period when the electron fraction in the innermost region exceeds 0.5. In inverted mass hierarchy, on the other hand, a dip of the event ratio should be observed. Therefore, the time variation of the event number ratio is useful to investigate the effect of the RSF conversion.

Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

Science.gov (United States)

Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois

2017-02-01

Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

Analytical calculation of spin tunneling effect in single molecule magnet Fe8 with considering quadrupole excitation

Directory of Open Access Journals (Sweden)

Y Yousefi

2018-02-01

Full Text Available Spin tunneling effect in Single Molecule Magnet Fe8 is studied by instanton calculation technique using SU(3 generalized spin coherent state in real parameter as a trial function. For this SMM, tunnel splitting arises due to the presence of a Berry like phase in action, which causes interference between tunneling trajectories (instantons. For this SMM, it is established that the use of quadrupole excitation (g dependence changes not only the location of the quenching points, but also the number of these points. Also, these quenching points are the steps in hysteresis loops of this SMM. If dipole and quadrupole excitations in classical energy considered, the number of these steps equals to the number that obtained from experimental data.

Detection of single electron spin resonance in a double quantum dota)

Science.gov (United States)

Koppens, F. H. L.; Buizert, C.; Vink, I. T.; Nowack, K. C.; Meunier, T.; Kouwenhoven, L. P.; Vandersypen, L. M. K.

2007-04-01

Spin-dependent transport measurements through a double quantum dot are a valuable tool for detecting both the coherent evolution of the spin state of a single electron, as well as the hybridization of two-electron spin states. In this article, we discuss a model that describes the transport cycle in this regime, including the effects of an oscillating magnetic field (causing electron spin resonance) and the effective nuclear fields on the spin states in the two dots. We numerically calculate the current flow due to the induced spin flips via electron spin resonance, and we study the detector efficiency for a range of parameters. The experimental data are compared with the model and we find a reasonable agreement.

Spin-flip scattering effect on the current-induced spin torque in ferromagnet-insulator-ferromagnet tunnel junctions

International Nuclear Information System (INIS)

Zhu Zhengang; Su Gang; Jin Biao; Zheng Qingrong

2003-01-01

We have investigated the current-induced spin transfer torque of a ferromagnet-insulator-ferromagnet tunnel junction by taking the spin-flip scatterings into account. It is found that the spin-flip scattering can induce an additional spin torque, enhancing the maximum of the spin torque and giving rise to an angular shift compared to the case when the spin-flip scatterings are neglected. The effects of the molecular fields of the left and right ferromagnets on the spin torque are also studied. It is found that τ Rx /I e (τ Rx is the spin-transfer torque acting on the right ferromagnet and I e is the tunneling electrical current) does vary with the molecular fields. At two certain angles, τ Rx /I e is independent of the molecular field of the right ferromagnet, resulting in two crossing points in the curve of τ Rx /I e versus the relevant orientation for different molecular fields

Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

Science.gov (United States)

Burton, J D; Tsymbal, E Y

2011-04-15

A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

Spin current in an electron waveguide tunnel-coupled to a topological insulator

International Nuclear Information System (INIS)

Sukhanov, Aleksei A; Sablikov, Vladimir A

2012-01-01

We show that electron tunneling from edge states in a two-dimensional topological insulator into a parallel electron waveguide leads to the appearance of spin-polarized current in the waveguide. The spin polarization P can be very close to unity and the electron current passing through the tunnel contact splits in the waveguide into two branches flowing from the contact. The polarization essentially depends on the electron scattering by the contact and the electron-electron interaction in the one-dimensional edge states. The electron-electron interaction is treated within the Luttinger liquid model. The main effect of the interaction stems from the renormalization of the electron velocity, due to which the polarization increases with the interaction strength. Electron scattering by the contact leads to a decrease in P. A specific effect occurs when the bottom of the subbands in the waveguide crosses the Dirac point of the spectrum of edge states when changing the voltage or chemical potential. This leads to changing the direction of the spin current.

Suppression of quantum tunneling for all spins for easy-axis systems

International Nuclear Information System (INIS)

Khare, Avinash; Paranjape, M. B.

2011-01-01

The semiclassical limit of quantum spin systems corresponds to a dynamical Lagrangian which contains the usual kinetic energy, the couplings and interactions of the spins, and an additional, first-order kinematical term which corresponds to the Wess-Zumino-Novikov-Witten (WZNW) term for the spin degree of freedom. It was shown that in the case of the kinetic dynamics determined only by the WZNW term, half-odd integer spin systems show a lack of tunneling phenomena, whereas integer spin systems are subject to it in the case of potentials with easy-plane easy-axis symmetry. Here we prove for the theory with a normal quadratic kinetic term of arbitrary strength or the first-order theory with azimuthal symmetry (which is equivalently the so-called easy-axis situation), that the tunneling is in fact suppressed for all nonzero values of spin. This model exemplifies the concept that in the presence of complex Euclidean action, it is necessary to use the ensuing complex critical points in order to define the quantum (perturbation) theory. In the present example, if we do not do so, exactly the opposite, erroneous conclusion that the tunneling is unsuppressed for all spins, is reached.

The impact of structural relaxation on spin polarization and magnetization reversal of individual nano structures studied by spin-polarized scanning tunneling microscopy.

Science.gov (United States)

Sander, Dirk; Phark, Soo-Hyon; Corbetta, Marco; Fischer, Jeison A; Oka, Hirofumi; Kirschner, Jürgen

2014-10-01

The application of low temperature spin-polarized scanning tunneling microscopy and spectroscopy in magnetic fields for the quantitative characterization of spin polarization, magnetization reversal and magnetic anisotropy of individual nano structures is reviewed. We find that structural relaxation, spin polarization and magnetic anisotropy vary on the nm scale near the border of a bilayer Co island on Cu(1 1 1). This relaxation is lifted by perimetric decoration with Fe. We discuss the role of spatial variations of the spin-dependent electronic properties within and at the edge of a single nano structure for its magnetic properties.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

International Nuclear Information System (INIS)

Parui, Subir; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Casanova, Fèlix; Hueso, Luis E.

2016-01-01

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al 2 O 3 /NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Bedoya-Pinto, Amilcar [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Max Planck Institute of Microstructure Physics, D-06120 Halle (Germany); Sun, Xiangnan [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); National Center for Nanoscience and Technology, 100190 Beijing (China); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

2016-08-01

The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.

Spin Dynamics and Quantum Tunneling in Fe8 Nanomagnet and in AFM Rings by NMR

Energy Technology Data Exchange (ETDEWEB)

Ho-Baek, Seung [Iowa State Univ., Ames, IA (United States)

2004-01-01

In this thesis, our main interest has been to investigate the spin dynamics and quantum tunneling in single molecule magnets (SMMs), For this we have selected two different classes of SMMs: a ferrimagnetic total high spin S = 10 cluster Fe8 and antiferromagnetic (AFM) ring-type clusters. For Fe8, our efforts have been devoted to the investigation of the quantum tunneling of magnetization in the very low temperature region. The most remarkable experimental finding in Fe8 is that the nuclear spin-lattice relaxation rate (1/T{sub l}) at low temperatures takes place via strong collision mechanism, and thus it allows to measure directly the tunneling rate vs T and H for the first time. For AFM rings, we have shown that 1/T{sub l} probes the thermal fluctuations of the magnetization in the intermediate temperature range. We find that the fluctuations are dominated by a single characteristic frequency which has a power law T-dependence indicative of fluctuations due to electron-acoustic phonon interactions.

Dependence of the Spin Transfer Torque Switching Current Density on the Exchange Stiffness Constant

OpenAIRE

You, Chun-Yeol

2012-01-01

We investigate the dependence of the switching current density on the exchange stiffness constant in the spin transfer torque magnetic tunneling junction structure with micromagnetic simulations. Since the widely accepted analytic expression of the switching current density is based on the macro-spin model, there is no dependence of the exchange stiffness constant. When the switching is occurred, however, the spin configuration forms C-, S-type, or complicated domain structures. Since the spi...

Instantaneous coherent destruction of tunneling and fast quantum state preparation for strongly pulsed spin qubits in diamond

DEFF Research Database (Denmark)

Wubs, Martijn

2010-01-01

Qubits driven by resonant strong pulses are studied and a parameter regime is explored in which the dynamics can be solved in closed form. Instantaneous coherent destruction of tunneling can be seen for longer pulses, whereas shorter pulses allow a fast preparation of the qubit state. Results...... are compared with recent experiments of pulsed nitrogen-vacancy center spin qubits in diamond....

Temperature dependence of electron spin-lattice relaxation of radiation-produced silver atoms in polycrystalline aqueous and glassy organic matrices. Importance of relaxation by tunneling modes in disordered matrices

International Nuclear Information System (INIS)

Michalik, J.; Kevan, L.

1978-01-01

The electron spin-lattice relaxation of trapped silver atoms in polycrystalline ice matrices and in methanol, ethanol, propylene carbonate, and 2-methyltetrahydrofuran organic glasses has been directly studied as a function of temperature by the saturation-recovery method. Below 40 K the dominant electron spin-lattice relaxation mechanism involves modulation of the electron nuclear dipolar interaction with nuclei in the radical's environment by tunneling of those nuclei between two nearly equal energy configurations. This relaxation mechanism occurs with high efficiency, has a characteristic linear temperature dependence, and is typically found in highly disordered matrices. The efficiency of this relaxation mechanism seems to decrease with decreasing polarity of the matrix. Deuteration experiments show that the tunneling nuclei are protons and in methanol it is shown that the methyl protons have more tunneling modes available than the hydroxyl protons. In polycrystalline ice matrices silver atoms can be stabilized with two different orientations of surrounding water molecules; the efficiency of the tunneling relaxation reflects this difference. From these and previous results on tunneling relaxation of trapped electrons in glassy matrices it appears that tunneling relaxation may be used to distinguish models with different geometrical configurations and to determine the relative rigidity of such configurations around trapped radicals in disordered solids. (author)

The effect of asymmetry on resonant tunneling

International Nuclear Information System (INIS)

Garcia-Calderon, G.

1986-07-01

Resonant tunneling experiments on multibarrier coupled heterostructures probe the quasistationary nature of the states of the corresponding one dimensional potential. This work considers the effect of asymmetric one dimensional multibarrier potentials on resonant tunneling. It is shown, by using the properties of the propagator of the system, that this effect may lead to novel resonance phenomena and affects the lifetime of the quasistationary states of the system. The above considerations are illustrated by a simple analytical solvable model. (author)

Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

Energy Technology Data Exchange (ETDEWEB)

Dartora, C.A., E-mail: cadartora@eletrica.ufpr.br [Electrical Engineering Department, Federal University of Parana (UFPR), C.P. 19011 Curitiba, 81.531-970 PR (Brazil); Nobrega, K.Z., E-mail: bzuza1@yahoo.com.br [Federal Institute of Education, Science and Technolgy of Maranhão (IFMA), Av. Marechal Castelo Branco, 789, São Luís, 65.076-091 MA (Brazil); Cabrera, G.G., E-mail: cabrera@ifi.unicamp.br [Instituto de Física ‘Gleb Wataghin’, Universidade Estadual de Campinas (UNICAMP), C.P. 6165, Campinas 13.083-970 SP (Brazil)

2016-08-15

Usually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields. In this letter, the temporal dynamics of charge and spin currents in a tunnel junction induced by pulsed magnetic fields is considered. At low bias voltages, energy and momentum of the conduction electrons are nearly conserved in the tunneling process, leading to the description of the junction as a spin-1/2 fermionic system coupled to time-varying magnetic fields. Under the influence of pulsed magnetic fields, charge and spin current can flow across the tunnel junction, displaying oscillatory behavior, even in the absence of DC bias voltage. A type of spin capacitance function, in close analogy to electric capacitance, is predicted.

Tunneling magnetoresistance in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Tao, L. L.; Liang, S. H.; Liu, D. P.; Wei, H. X.; Han, X. F., E-mail: xfhan@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, Jian [Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong (China)

2014-04-28

We present a theoretical study of the tunneling magnetoresistance (TMR) and spin-polarized transport in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junction (MTJ). It is found that the spin-polarized conductance and bias-dependent TMR ratios are rather sensitive to the structure of Fe{sub 3}Si electrode. From the symmetry analysis of the band structures, we found that there is no spin-polarized Δ{sub 1} symmetry bands crossing the Fermi level for the cubic Fe{sub 3}Si. In contrast, the tetragonal Fe{sub 3}Si driven by in-plane strain reveals half-metal nature in terms of Δ{sub 1} state. The giant TMR ratios are predicted for both MTJs with cubic and tetragonal Fe{sub 3}Si electrodes under zero bias. However, the giant TMR ratio resulting from interface resonant transmission for the former decreases rapidly with the bias. For the latter, the giant TMR ratio can maintain up to larger bias due to coherent transmission through the majority-spin Δ{sub 1} channel.

Theory of inelastic electron tunneling from a localized spin in the impulsive approximation.

Science.gov (United States)

Persson, Mats

2009-07-31

A simple expression for the conductance steps in inelastic electron tunneling from spin excitations in a single magnetic atom adsorbed on a nonmagnetic metal surface is derived. The inelastic coupling between the tunneling electron and the spin is via the exchange coupling and is treated in an impulsive approximation using the Tersoff-Hamann approximation for the tunneling between the tip and the sample.

The combined resonance tunneling and semi-resonance level in low energy D-D reaction

International Nuclear Information System (INIS)

Li Xingzhong; Jin Dezhe; Chang Lee

1993-01-01

When nuclear potential wells are connected by an atomic potential well, a new kind of tunneling may happen even if there is no virtual energy level in nuclear potential wells. The necessary condition for this combined resonance tunneling is the resonance in the atomic potential well. Thus, the nuclear reaction may be affected by the action in atomic scale in terms of combined resonance tunneling. The nuclear spectrum data support this idea. (author)

Irreversible magnetic-field dependence of ferromagnetic resonance and inverse spin Hall effect voltage in CoFeB/Pt bilayer

Energy Technology Data Exchange (ETDEWEB)

Kim, Sang-Il [Department of Materials Science and Engineering, Korea University, Seoul, 136-713 (Korea, Republic of); Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Seo, Min-Su [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Choi, Yeon Suk, E-mail: ychoi@kbsi.re.kr [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Park, Seung-Young, E-mail: parksy@kbsi.re.kr [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of)

2017-01-01

Magnetic field (H) sweeping direction dependences of the mixed voltage V{sub mix} induced by the inverse-spin Hall effect(ISHE) and spin-rectified effect (SRE) in a CoFeB (5 nm)/Pt (10 nm) bilayer structure are investigated using the ferromagnetic resonance in the TE mode cavities and coplanar waveguide methods. Conventionally, the magnitude of ISHE voltage V{sub ISH} (symmetric) excluding the SRE (antisymmetric component) was unavoidably separated from the fitting curve of V{sub mix} (a sum of a symmetric and an antisymmetric part) for one direction of H-source. By studying the ratio of the two voltage parts with the bi-directional H sweeping, the optimized V{sub ISH} (no SRE condition) value which also include a well-defined spin Hall angle can be obtained via the linear response relation of ISHE and SRE components. - Highlights: • Hysteretic behavior of ferromagnetic resonance spectra in the CoFeB/Pt sample. • Hysteretic behavior of inverse-spin Hall effect voltage in the CoFeB/Pt sample. • Proportion of inverse spin-Hall effect voltage can be determined by the cavity mode. • The hysteretic behavior arise from the unsaturated magnetization limit. • The well-defined spin Hall angle which consider a hysteresis can be obtained.

Scaling Projections on Spin-Transfer Torque Magnetic Tunnel Junctions

Science.gov (United States)

Das, Debasis; Tulapurkar, Ashwin; Muralidharan, Bhaskaran

2018-02-01

We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function spin transport formalism. We study the geometry dependence by considering square and circular cross-sections. As the transverse dimension in each case reduces, we demonstrate that the transverse mode energy profile plays a major role in the resistance-area product. Both types of devices show constant tunnel magnetoresistance at larger cross-sectional areas but achieve ultra-high magnetoresistance at small cross-sectional areas, while maintaining low resistance-area products. We notice that although the critical switching voltage for switching the magnetization of the free layer nanomagnet in the trilayer case remains constant at larger areas, it needs more energy to switch at smaller areas. In the pentalayer case, we observe an oscillatory behavior at smaller areas as a result of double barrier tunneling. We also describe how switching characteristics of both kinds of devices are affected by the scaling.

Spin-polarized scanning tunneling microscopy with quantitative insights into magnetic probes.

Science.gov (United States)

Phark, Soo-Hyon; Sander, Dirk

2017-01-01

Spin-polarized scanning tunneling microscopy and spectroscopy (spin-STM/S) have been successfully applied to magnetic characterizations of individual nanostructures. Spin-STM/S is often performed in magnetic fields of up to some Tesla, which may strongly influence the tip state. In spite of the pivotal role of the tip in spin-STM/S, the contribution of the tip to the differential conductance d I /d V signal in an external field has rarely been investigated in detail. In this review, an advanced analysis of spin-STM/S data measured on magnetic nanoislands, which relies on a quantitative magnetic characterization of tips, is discussed. Taking advantage of the uniaxial out-of-plane magnetic anisotropy of Co bilayer nanoisland on Cu(111), in-field spin-STM on this system has enabled a quantitative determination, and thereby, a categorization of the magnetic states of the tips. The resulting in-depth and conclusive analysis of magnetic characterization of the tip opens new venues for a clear-cut sub-nanometer scale spin ordering and spin-dependent electronic structure of the non-collinear magnetic state in bilayer high Fe nanoislands on Cu(111).

Scanning Tunneling Optical Resonance Microscopy

Science.gov (United States)

Bailey, Sheila; Wilt, Dave; Raffaelle, Ryne; Gennett, Tom; Tin, Padetha; Lau, Janice; Castro, Stephanie; Jenkins, Philip; Scheiman, Dave

2003-01-01

Scanning tunneling optical resonance microscopy (STORM) is a method, now undergoing development, for measuring optoelectronic properties of materials and devices on the nanoscale by means of a combination of (1) traditional scanning tunneling microscopy (STM) with (2) tunable laser spectroscopy. In STORM, an STM tip probing a semiconductor is illuminated with modulated light at a wavelength in the visible-to-near-infrared range and the resulting photoenhancement of the tunneling current is measured as a function of the illuminating wavelength. The photoenhancement of tunneling current occurs when the laser photon energy is sufficient to excite charge carriers into the conduction band of the semiconductor. Figure 1 schematically depicts a proposed STORM apparatus. The light for illuminating the semiconductor specimen at the STM would be generated by a ring laser that would be tunable across the wavelength range of interest. The laser beam would be chopped by an achromatic liquid-crystal modulator. A polarization-maintaining optical fiber would couple the light to the tip/sample junction of a commercial STM. An STM can be operated in one of two modes: constant height or constant current. A STORM apparatus would be operated in the constant-current mode, in which the height of the tip relative to the specimen would be varied in order to keep the tunneling current constant. In this mode, a feedback control circuit adjusts the voltage applied to a piezoelectric actuator in the STM that adjusts the height of the STM tip to keep the tunneling current constant. The exponential relationship between the tunneling current and tip-to-sample distance makes it relatively easy to implement this mode of operation. The choice of method by which the photoenhanced portion of the tunneling current would be measured depends on choice of the frequency at which the input illumination would be modulated (chopped). If the frequency of modulation were low enough (typically tunneling current

Spin and tunneling dynamics in an asymmetrical double quantum dot with spin-orbit coupling: Selective spin transport device

Science.gov (United States)

Singh, Madhav K.; Jha, Pradeep K.; Bhattacherjee, Aranya B.

2017-09-01

In this article, we study the spin and tunneling dynamics as a function of magnetic field in a one-dimensional GaAs double quantum dot with both the Dresselhaus and Rashba spin-orbit coupling. In particular, we consider different spatial widths for the spin-up and spin-down electronic states. We find that the spin dynamics is a superposition of slow as well as fast Rabi oscillations. It is found that the Rashba interaction strength as well as the external magnetic field strongly modifies the slow Rabi oscillations which is particularly useful for implementing solid state selective spin transport device.

Quasiparticle spin resonance and coherence in superconducting aluminium.

Science.gov (United States)

Quay, C H L; Weideneder, M; Chiffaudel, Y; Strunk, C; Aprili, M

2015-10-26

Conventional superconductors were long thought to be spin inert; however, there is now increasing interest in both (the manipulation of) the internal spin structure of the ground-state condensate, as well as recently observed long-lived, spin-polarized excitations (quasiparticles). We demonstrate spin resonance in the quasiparticle population of a mesoscopic superconductor (aluminium) using novel on-chip microwave detection techniques. The spin decoherence time obtained (∼100 ps), and its dependence on the sample thickness are consistent with Elliott-Yafet spin-orbit scattering as the main decoherence mechanism. The striking divergence between the spin coherence time and the previously measured spin imbalance relaxation time (∼10 ns) suggests that the latter is limited instead by inelastic processes. This work stakes out new ground for the nascent field of spin-based electronics with superconductors or superconducting spintronics.

Spin-dependent recombination processes in wide band gap II-Mn-VI compounds

International Nuclear Information System (INIS)

Godlewski, M.; Yatsunenko, S.; Khachapuridze, A.; Ivanov, V.Yu.

2004-01-01

Mechanisms of optical detection of magnetic resonance in wide band gap II-Mn-VI diluted magnetic semiconductor (DMS) are discussed based on the results of photoluminescence (PL), PL kinetics, electron spin resonance (ESR) and optically detected magnetic resonance (ODMR) and optically detected cyclotron resonance (ODCR) investigations. Spin-dependent interactions between localized spins of Mn 2+ ions and spins/magnetic moments of free, localized or bound carriers are responsible for the observed ODMR signals. We conclude that these interactions are responsible for the observed rapid shortening of the PL decay time of 4 T 1 → 6 A 1 intra-shell emission of Mn 2+ ions and also for the observed delocalization of excitons in low dimensional structures

Efficient spin transitions in inelastic electron tunneling spectroscopy.

Science.gov (United States)

Lorente, Nicolás; Gauyacq, Jean-Pierre

2009-10-23

The excitation of the spin degrees of freedom of an adsorbed atom by tunneling electrons is computed using strong coupling theory. Recent measurements [Heinrich, Science 306, 466 (2004)] reveal that electron currents in a magnetic system efficiently excite its magnetic moments. Our theory shows that the incoming electron spin strongly couples with that of the adsorbate so that memory of the initial spin state is lost, leading to large excitation efficiencies. First-principles transmissions are evaluated in quantitative agreement with the experiment.

The possibility to determine a constant of spin-orbit interaction by scanning tunneling microscopy method

International Nuclear Information System (INIS)

Khotkevich, N.V.; Kolesnichenko, Yu.A.; Vovk, N.P.

2016-01-01

The electron tunneling from the quasi-two-dimensional (surface) states with the spin-orbit interaction into bulk-mode states is studied in the framework of a model of an infinitely thin inhomogeneous tunnel magnetic barrier. The influence of the scattering of quasi-two-dimensional electrons by a single magnetic defect on the tunnel current is analyzed. Analytic formulas for the conductance of a tunnel point-contact as a function of its distance from the defect are obtained. It is shown that the analysis of the local magnetization density around the defect by means of spin-polarized scanning tunneling microscopy allows finding the constant of spin orbit interaction.

Electronic transport through EuO spin-filter tunnel junctions

KAUST Repository

Jutong, Nuttachai

2012-11-12

Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the Δ1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.

Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

KAUST Repository

Manchon, Aurelien

2011-05-17

Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.

Transmission coefficient, resonant tunneling lifetime and traversal time in multibarrier semiconductor heterostructure

Energy Technology Data Exchange (ETDEWEB)

Nanda, Jyotirmayee [Department of Physics, National Institute of Technology, Rourkela, 769008 (India)]. E-mail: jnanda_b9@rediffmail.com; Mahapatra, P.K. [Department of Physics and Technophysics, Vidyasagar University, Midnapore, 721102 (India)]. E-mail: pkmahapatra@vidyasagar.ac.in; Roy, C.L. [Department of Physics and Meterology, Indian Institute of Technology, Kharagpur, 721302 (India)

2006-09-01

A computational model based on non-relativistic approach is proposed for the determination of transmission coefficient, resonant tunneling energies, group velocity, resonant tunneling lifetime and traversal time in multibarrier systems (GaAs/Al {sub y} Ga{sub 1-} {sub y} As) for the entire energy range {epsilon}V {sub 0}, V {sub 0}, being the potential barrier height. The resonant energy states were found to group into allowed tunneling bands separated by forbidden gaps. The tunneling lifetime and the traversal time are found to have minimum values at the middle of each allowed band. Further, It is observed that the electrons with energies in the higher tunneling band could tunnel out faster than those with energies in the lower band. Moreover, an additional resonant peak in resonant energy spectrum indicated the presence of a surface state where resonant tunneling occurs.

Spin-dependent quasiparticle tunneling in junction superconductor-isolator-ferromagnetic

International Nuclear Information System (INIS)

Shlapak, Yu.V.; Shaternik, V.E.; Rudenko, E.M.

2001-01-01

The influence of Andreev reflection of quasiparticles in transparent tunnel junctions of superconductor-isolator-ferromagnetic on electric-current transport is studied within the framework of the Blonder-Tinkham-Klapwijk (BTK) model. It's obtained that current and signal-to-noise ratio can be increased for the memory cell by using in it the double-barrier tunnel junction ferromagnetic-isolator-superconductor-isolator-ferromagnetic instead off the usual tunnel junction ferromagnetic-isolator-ferromagnetic. The evolution of non-linear (tunnel-type) current-voltage characteristics with increasing of the junction transparency is described. (orig.)

Polarization of nuclear spins by a cold nanoscale resonator

International Nuclear Information System (INIS)

Butler, Mark C.; Weitekamp, Daniel P.

2011-01-01

A cold nanoscale resonator coupled to a system of nuclear spins can induce spin relaxation. In the low-temperature limit where spin-lattice interactions are ''frozen out,'' spontaneous emission by nuclear spins into a resonant mechanical mode can become the dominant mechanism for cooling the spins to thermal equilibrium with their environment. We provide a theoretical framework for the study of resonator-induced cooling of nuclear spins in this low-temperature regime. Relaxation equations are derived from first principles, in the limit where energy donated by the spins to the resonator is quickly dissipated into the cold bath that damps it. A physical interpretation of the processes contributing to spin polarization is given. For a system of spins that have identical couplings to the resonator, the interaction Hamiltonian conserves spin angular momentum, and the resonator cannot relax the spins to thermal equilibrium unless this symmetry is broken by the spin Hamiltonian. The mechanism by which such a spin system becomes ''trapped'' away from thermal equilibrium can be visualized using a semiclassical model, which shows how an indirect spin-spin interaction arises from the coupling of multiple spins to one resonator. The internal spin Hamiltonian can affect the polarization process in two ways: (1) By modifying the structure of the spin-spin correlations in the energy eigenstates, and (2) by splitting the degeneracy within a manifold of energy eigenstates, so that zero-frequency off-diagonal terms in the density matrix are converted to oscillating coherences. Shifting the frequencies of these coherences sufficiently far from zero suppresses the development of resonator-induced correlations within the manifold during polarization from a totally disordered state. Modification of the spin-spin correlations by means of either mechanism affects the strength of the fluctuating spin dipole that drives the resonator. In the case where product states can be chosen as energy

Photon-Assisted Resonant Chiral Tunneling Through a Bilayer Graphene Barrier

OpenAIRE

Phillips A. H.; Mina A. N.

2011-01-01

The electronic transport property of a bilayer graphene is investigated under the effect of an electromagnetic field. We deduce an expression for the conductance by solving the Dirac equation. This conductance depends on the barrier height for graphene and the energy of the induced photons. A resonance oscillatory behavior of the conductance is observed. These oscillations are strongly depends on the barrier height for chiral tunneling through graphene. This oscillatory behavio...

Study of degradation processes kinetics in ohmic contacts of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures under influence of temperature

Science.gov (United States)

Makeev, M. O.; Meshkov, S. A.

2017-07-01

The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.

Spin-dependent transport properties of oleic acid molecule self-assembled La0.7Sr0.3MnO3 nanoparticles

International Nuclear Information System (INIS)

Xi, L.; Du, J.H.; Ma, J.H.; Wang, Z.; Zuo, Y.L.; Xue, D.S.

2013-01-01

Highlights: ► Spin-dependent transport property of LSMO/oleic acid nanoparticles is investigated. ► Transport properties and MR measured by Cu/nanoparticle assembly/elargol device. ► Non-linear I–V curve indicates a tunneling type transport properties. ► Tunnel barrier height around 1.3 ± 0.15 eV was obtained by fitting I–V curves. ► LFMR of LSMO/oleic acid molecules value reaches −18% with current of 0.1 μA at 10 K. - Abstract: Spin-dependent transport property through molecules is investigated using a monolayer of oleic acid molecule self-assembled half metallic La 0.7 Sr 0.3 MnO 3 (LSMO) nanoparticles, which was synthesized using a coprecipitation method. Fourier transform infrared spectroscopy was used to confirm that one-monolayer oleic acid molecules chemically bond to the LSMO nanoparticles. The transport properties and magnetoresistance (MR) effect of the oleic acid molecule coated LSMO nanoparticles were measured by a direct current four probes method using a Cu/nanoparticle assembly/elargol electrode sandwich device with various temperatures and bias voltages. The non-linear I–V curve indicates a tunneling type transport properties. The tunnel barrier height around 1.3 ± 0.15 eV was obtained by fitting the I–V curve according to the Simmons equation. The magnetoresistance curves can be divided to high-field MR and low-field MR (LFMR) parts. The former is ascribed to the influence of spin disorder or canting within the LSMO nanoparticle surface and the latter one with strong bias dependence is attributed to the spin-dependent tunneling effect through the insulating surface layer of LSMO and oleic acid molecules. The enhanced LFMR effect for oleic acid coated LSMO with respect to the bare LSMO was attributed to the enhanced tunneling transport and weak spin scattering in oleic acid molecule barrier.

Resonant Tunneling in Gated Vertical One- dimensional Structures

Science.gov (United States)

Kolagunta, V. R.; Janes, D. B.; Melloch, M. R.; Webb, K. J.

1997-03-01

Vertical sub-micron transistors incorporating resonant tunneling multiple quantum well heterostructures are interesting in applications for both multi-valued logic devices and the study of quantization effects in vertical quasi- one-, zero- dimensional structures. Earlier we have demonstrated room temperature pinch-off of the resonant peak in sub-micron vertical resonant tunneling transistors structures using a self-aligned sidewall gating technique ( V.R. Kolagunta et. al., Applied Physics Lett., 69), 374(1996). In this paper we present the study of gating effects in vertical multiple quantum well resonant tunneling transistors. Multiple well quasi-1-D sidewall gated transistors with mesa dimensions of L_x=0.5-0.9μm and L_y=10-40μm were fabricated. The quantum heterostructure in these devices consists of two non-symmetric (180 ÅÅi-GaAs wells separated from each other and from the top and bottom n^+ GaAs/contacts region using Al_0.3Ga_0.7As tunneling barriers. Room temperature pinch-off of the multiple resonant peaks similar to that reported in the case of single well devices is observed in these devices^1. Current-voltage characteristics at liquid nitrogen temperatures show splitting of the resonant peaks into sub-bands with increasing negative gate bias indicative of quasi- 1-D confinement. Room-temperature and low-temperature current-voltage measurements shall be presented and discussed.

Simple classical approach to spin resonance phenomena

DEFF Research Database (Denmark)

Gordon, R A

1977-01-01

A simple classical method of describing spin resonance in terms of the average power absorbed by a spin system is discussed. The method has several advantages over more conventional treatments, and a number of important spin resonance phenomena, not normally considered at the introductory level...

Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet

Science.gov (United States)

Xie, Haiqing; Wang, Qiang; Xue, Hai-Bin; Jiao, HuJun; Liang, J.-Q.

2013-06-01

We investigate theoretically the effects of intrinsic spin-relaxation on the spin-dependent transport through a single-molecule magnet (SMM), which is weakly coupled to ferromagnetic leads. The tunnel magnetoresistance (TMR) is obtained by means of the rate-equation approach including not only the sequential but also the cotunneling processes. It is shown that the TMR is strongly suppressed by the fast spin-relaxation in the sequential region and can vary from a large positive to slight negative value in the cotunneling region. Moreover, with an external magnetic field along the easy-axis of SMM, a large negative TMR is found when the relaxation strength increases. Finally, in the high bias voltage limit the TMR for the negative bias is slightly larger than its characteristic value of the sequential region; however, it can become negative for the positive bias caused by the fast spin-relaxation.

Extreme Field Sensitivity of Magnetic Tunneling in Fe-Doped Li_{3}N.

Science.gov (United States)

Fix, M; Atkinson, J H; Canfield, P C; Del Barco, E; Jesche, A

2018-04-06

The magnetic properties of dilute Li_{2}(Li_{1-x}Fe_{x})N with x∼0.001 are dominated by the spin of single, isolated Fe atoms. Below T=10  K the spin-relaxation times become temperature independent indicating a crossover from thermal excitations to the quantum tunneling regime. We report on a strong increase of the spin-flip probability in transverse magnetic fields that proves the resonant character of this tunneling process. Longitudinal fields, on the other hand, lift the ground-state degeneracy and destroy the tunneling condition. An increase of the relaxation time by 4 orders of magnitude in applied fields of only a few milliTesla reveals exceptionally sharp tunneling resonances. Li_{2}(Li_{1-x}Fe_{x})N represents a comparatively simple and clean model system that opens the possibility to study quantum tunneling of the magnetization at liquid helium temperatures.

Extreme Field Sensitivity of Magnetic Tunneling in Fe-Doped Li3 N

Science.gov (United States)

Fix, M.; Atkinson, J. H.; Canfield, P. C.; del Barco, E.; Jesche, A.

2018-04-01

The magnetic properties of dilute Li2 (Li1 -xFex )N with x ˜0.001 are dominated by the spin of single, isolated Fe atoms. Below T =10 K the spin-relaxation times become temperature independent indicating a crossover from thermal excitations to the quantum tunneling regime. We report on a strong increase of the spin-flip probability in transverse magnetic fields that proves the resonant character of this tunneling process. Longitudinal fields, on the other hand, lift the ground-state degeneracy and destroy the tunneling condition. An increase of the relaxation time by 4 orders of magnitude in applied fields of only a few milliTesla reveals exceptionally sharp tunneling resonances. Li2 (Li1 -xFex )N represents a comparatively simple and clean model system that opens the possibility to study quantum tunneling of the magnetization at liquid helium temperatures.

Q factor and resonance amplitude of Josephson tunnel junctions

International Nuclear Information System (INIS)

Broom, R.F.; Wolf, P.

1977-01-01

The surface impedance of the superconducting films comprising the electrodes of Josephson tunnel junctions has been derived from the BCS theory in the extreme London limit. Expressions have been obtained for (i) the dependence of the penetration depth lambda on frequency and temperature, and (ii) the quality factor Q of the junction cavity, attributable to surface absorption in the electrodes. The effect of thin electrodes (t 9 or approx. = lambda) is also included in the calculations. Comparison of the calculated frequency dependence of lambda with resonance measurements on Pb-alloy and all-Nb tunnel junctions yields quite good agreement, indicating that the assumptions made in the theory are reasonable. Measurements of the (current) amplitude of the resonance peaks of the junctions have been compared with the values obtained from inclusion of the calculated Q in the theory by Kulik. In common with observations on microwave cavities by other workers, we find that a small residual conductivity must be added to the real part of the BCS value. With its inclusion, good agreement is found between calculation and experiment, within the range determined by the simplifying assumptions of Kulik's theory. From the results, we believe the calculation of Q to be reasonably accurate for the materials investigated. It is shown that the resonance amplitude of Josephson junctions can be calculated directly from the material constants and a knowledge of the residual conductivity

Orientation-dependent Kondo resonance of the Ni{sub 2}(hfaa){sub 4}(bpm) and Mn{sub 2}(hfaa){sub 4}(bpm) single molecular magnets

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lei; Schackert, Michael; Miyamachi, Toshio; Yamada, Toyokazu; Wulfhekel, Wulf [Physikalisches Institut, Karlsruhe Institut of Technology (Germany); Schramm, Frank; Ruben, Mario [Institut of Nanotechnology, Karlsruhe Institut of Technology (Germany)

2011-07-01

Single molecular magnets (SMM) attract much interest due to their potential applications in spintronics. We investigated metal organic molecules based on (hfaa){sub 4}(bpm) containing two 3d ions (Ni or Mn) using low temperature scanning tunneling microscopy (STM) at 1 K in ultra-high vacuum. In the bulk, the two metallic ions couple antiferromagnetically leading to an S=0 ground state. The Ni{sub 2} and Mn{sub 2} molecules were sublimed onto atomically clean Cu(100) surfaces resulting in two different absorptions configurations. Scanning tunneling spectroscopy (STS) with a high energy resolution of 0.3 meV showed a strong Kondo resonance on the position of the metal ions inside the molecules indicating that the hybridization of the local spins with the substrate is more efficient than their antiferromagnetic coupling. The Fano resonance showed a pronounced dependence on the adsorption geometry indicating different Kondo temperatures and q-parameters. This is explained by a adsorption dependent hybridization between SMM and the substrate.

Spin Tunneling in Junctions with Disordered Ferromagnets

NARCIS (Netherlands)

Paluskar, P.V.; Attema, J.J.; de Wijs, G.A.; Fiddy, S.; Snoeck, E.; Kohlhepp, J.T.; Swagten, H.J.M.; de Groot, R. A.; Koopmans, H.

2008-01-01

We provide compelling evidence to establish that, contrary to one’s elementary guess, the tunneling spin polarization (TSP) of amorphous CoFeB is larger than that of fcc CoFeB. First-principles atomic and electronic structure calculations reveal striking agreement between the measured TSP and the

Tunneling and resonant conductance in one-dimensional molecular structures

International Nuclear Information System (INIS)

Kozhushner, M.A.; Posvyanskii, V.S.; Oleynik, I.I.

2005-01-01

We present a theory of tunneling and resonant transitions in one-dimensional molecular systems which is based on Green's function theory of electron sub-barrier scattering off the structural units (or functional groups) of a molecular chain. We show that the many-electron effects are of paramount importance in electron transport and they are effectively treated using a formalism of sub-barrier scattering operators. The method which calculates the total scattering amplitude of the bridge molecule not only predicts the enhancement of the amplitude of tunneling transitions in course of tunneling electron transfer through onedimensional molecular structures but also allows us to interpret conductance mechanisms by calculating the bound energy spectrum of the tunneling electron, the energies being obtained as poles of the total scattering amplitude of the bridge molecule. We found that the resonant tunneling via bound states of the tunneling electron is the major mechanism of electron conductivity in relatively long organic molecules. The sub-barrier scattering technique naturally includes a description of tunneling in applied electric fields which allows us to calculate I-V curves at finite bias. The developed theory is applied to explain experimental findings such as bridge effect due to tunneling through organic molecules, and threshold versus Ohmic behavior of the conductance due to resonant electron transfer

(1) Majorana fermions in pinned vortices; (2) Manipulating and probing Majorana fermions using superconducting circuits; and (3) Controlling a nanowire spin-orbit qubit via electric-dipole spin resonance

Science.gov (United States)

Nori, Franco

2014-03-01

We study a heterostructure which consists of a topological insulator and a superconductor with a hole. This system supports a robust Majorana fermion state bound to the vortex core. We study the possibility of using scanning tunneling spectroscopy (i) to detect the Majorana fermion in this setup and (ii) to study excited states bound to the vortex core. The Majorana fermion manifests itself as an H-dependent zero-bias anomaly of the tunneling conductance. The excited states spectrum differs from the spectrum of a typical Abrikosov vortex, providing additional indirect confirmation of the Majorana state observation. We also study how to manipulate and probe Majorana fermions using super-conducting circuits. In we consider a semiconductor nanowire quantum dot with strong spin-orbit coupling (SOC), which can be used to achieve a spin-orbit qubit. In contrast to a spin qubit, the spin-orbit qubit can respond to an external ac electric field, i.e., electric-dipole spin resonance. We develop a theory that can apply in the strong SOC regime. We find that there is an optimal SOC strength ηopt = √ 2/2, where the Rabi frequency induced by the ac electric field becomes maximal. Also, we show that both the level spacing and the Rabi frequency of the spin-orbit qubit have periodic responses to the direction of the external static magnetic field. These responses can be used to determine the SOC in the nanowire. FN is partly supported by the RIKEN CEMS, iTHES Project, MURI Center for Dynamic Magneto-Optics, JSPS-RFBR Contract No. 12-02-92100, Grant-in-Aid for Scientific Research (S), MEXT Kakenhi on Quantum Cybernetics, and the JSPS via its FIRST program.

Wind tunneling testing and analysis relating to the spinning of light aircraft

Science.gov (United States)

Mccormick, B. W.; Zilliac, G. G.; Ballin, M. G.

1984-01-01

Included is a summary of two studies related to the spinning of light aircraft. The first study was conducted to demonstrate that the aerodynamic forces and moments acting on a tail of a spinning aircraft can be obtained from static wind-tunnel tests. The second study analytically investigated spinning using a high angle-of-attack aerodynamic model derived from a static wind-tunnel data base. The validity of the aerodynamic model is shown by comparisons with rotary-balance data and forced-oscillation tests. The results of a six-degree-of-freedom analysis show that the dynamics and aerodynamics of the steep- and flat-spin modes of a modified Yankee have been properly modeled.

Mechanical design of a rotary balance system for NASA. Langley Research Center's vertical spin tunnel

Science.gov (United States)

Allred, J. W.; Fleck, V. J.

1992-01-01

A new lightweight Rotary Balance System is presently being fabricated and installed as part of a major upgrade to the existing 20 Foot Vertical Spin Tunnel. This upgrade to improve model testing productivity of the only free spinning vertical wind tunnel includes a modern fan/drive and tunnel control system, an updated video recording system, and the new rotary balance system. The rotary balance is a mechanical apparatus which enables the measurement of aerodynamic force and moment data under spinning conditions (100 rpm). This data is used in spin analysis and is vital to the implementation of large amplitude maneuvering simulations required for all new high performance aircraft. The new rotary balance system described in this report will permit greater test efficiency and improved data accuracy. Rotary Balance testing with the model enclosed in a tare bag can also be performed to obtain resulting model forces from the spinning operation. The rotary balance system will be stored against the tunnel sidewall during free flight model testing.

Field-angle dependence of magnetic resonance in Pt/NiFe films

International Nuclear Information System (INIS)

Inoue, H.Y.; Harii, K.; Saitoh, E.

2007-01-01

Ferromagnetic resonance in NiFe/ amorphous Pt bilayer thin films was investigated with changing the external field direction. The spectral width of the ferromagnetic resonance depends critically on the external-magnetic-field direction. We found that the sample dependence of the spectral width is enhanced with deviation of external field direction from the direction along the film plain, implying an important role of spin directions in field-induced spin-decoherence mechanism in Pt

Rashba and Dresselhaus spin-orbit coupling effects on tunnelling through two-dimensional magnetic quantum systems

International Nuclear Information System (INIS)

Xu Wen; Guo Yong

2005-01-01

We investigate the influence of the Rashba and Dresselhaus spin-orbit coupling interactions on tunnelling through two-dimensional magnetic quantum systems. It is showed that not only Rashba spin-orbit coupling but also Dresselhaus one can affect spin tunnelling properties greatly in such a quantum system. The transmission possibility, the spin polarization and the conductance are obviously oscillated with both coupling strengths. High spin polarization, conductance and magnetic conductance of the structure can be obtained by modulating either Rashba or Dresselhaus coupling strength

Pumping $ac$ Josephson current in the Single Molecular Magnets by spin nutation

OpenAIRE

Abdollahipour, B.; Abouie, J.; Rostami, A. A.

2012-01-01

We demonstrate that an {\\it ac} Josephson current is pumped through the Single Molecular Magnets (SMM) by the spin nutation. The spin nutation is generated by applying a time dependent magnetic field to the SMM. We obtain the flowing charge current through the junction by working in the tunneling limit and employing Green's function technique. At the resonance conditions some discontinuities and divergencies are appeared in the normal and Josephson currents, respectively. Such discontinuities...

Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions

International Nuclear Information System (INIS)

Dai, Jian-Qing

2016-01-01

We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO 3 /Fe multiferroic tunnel junction with asymmetric TiO 2 - and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p z orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

Resonant-enhanced spectroscopy of molecular rotations with a scanning tunneling microscope.

Science.gov (United States)

Natterer, Fabian Donat; Patthey, François; Brune, Harald

2014-07-22

We use rotational excitation spectroscopy with a scanning tunneling microscope to investigate the rotational properties of molecular hydrogen and its isotopes physisorbed on the surfaces of graphene and hexagonal boron nitride (h-BN), grown on Ni(111), Ru(0001), and Rh(111). The rotational excitation energies are in good agreement with ΔJ = 2 transitions of freely spinning p-H2 and o-D2 molecules. The variations of the spectral line shapes for H2 among the different surfaces can be traced back to a molecular resonance-mediated tunneling mechanism. Our data for H2/h-BN/Rh(111) suggest a local intrinsic gating on this surface due to lateral static dipoles. Spectra on a mixed monolayer of H2, HD, and D2 display all three J = 0 → 2 rotational transitions, irrespective of tip position, thus pointing to a multimolecule excitation, or molecular mobility in the physisorbed close-packed layer.

Spin dynamics of Mn12-acetate in the thermally activated tunneling regime: ac susceptibility and magnetization relaxation

Science.gov (United States)

Pohjola, Teemu; Schoeller, Herbert

2000-12-01

In this work, we study the spin dynamics of Mn12-acetate molecules in the regime of thermally assisted tunneling. In particular, we describe the system in the presence of a strong transverse magnetic field. Similar to recent experiments, the relaxation time/rate is found to display a series of resonances; their Lorentzian shape is found to stem from the tunneling. The dynamic susceptibility χ(ω) is calculated starting from the microscopic Hamiltonian and the resonant structure manifests itself also in χ(ω). Similar to recent results reported on another molecular magnet, Fe8, we find oscillations of the relaxation rate as a function of the transverse magnetic field when the field is directed along a hard axis of the molecules. This phenomenon is attributed to the interference of the geometrical or Berry phase. We propose susceptibility experiments to be carried out for strong transverse magnetic fields to study these oscillations and for a better resolution of the sharp satellite peaks in the relaxation rates.

Efficient spin filter using multi-terminal quantum dot with spin-orbit interaction

Directory of Open Access Journals (Sweden)

Yokoyama Tomohiro

2011-01-01

Full Text Available Abstract We propose a multi-terminal spin filter using a quantum dot with spin-orbit interaction. First, we formulate the spin Hall effect (SHE in a quantum dot connected to three leads. We show that the SHE is significantly enhanced by the resonant tunneling if the level spacing in the quantum dot is smaller than the level broadening. We stress that the SHE is tunable by changing the tunnel coupling to the third lead. Next, we perform a numerical simulation for a multi-terminal spin filter using a quantum dot fabricated on semiconductor heterostructures. The spin filter shows an efficiency of more than 50% when the conditions for the enhanced SHE are satisfied. PACS numbers: 72.25.Dc,71.70.Ej,73.63.Kv,85.75.-d

Spin transfer matrix formulation and snake resonances for polarized proton beams

International Nuclear Information System (INIS)

Tepikian, S.

1986-01-01

The polarization of a spin polarized proton beam in a circular accelerator is described by a spin transfer matrix. Using this method, they investigate three problems: (1) the crossing of multiple spin resonances, (2) resonance jumping and (3) an accelerator with Siberian snakes. When crossing two (or more) spin resonances, there are no analytic solutions available. However, they can obtain analytic expressions if the two spin resonances are well separated (nonoverlapping) or very close together (overlapping). Between these two extremes they resort to numerical solution of the spin equations. Resonance jumping can be studied using the tools developed for analyzing the cross of multiple spin resonances. These theoretical results compare favorably with experimental results obtained from the AGS at Brookhaven. For large accelerators, resonance jumping becomes impractical and other methods such as Siberian snakes must be used to keep the beam spin polarized. An accelerator with Siberian snakes and isolated spin resonances can be described with a spin transfer matrix. From this, they find a new type of spin depolarizing resonance, called snake resonances

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien; Matsumoto, R.; Jaffres, H.; Grollier, J.

2012-01-01

in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque

Morphology effects on spin-dependent transport and recombination in polyfluorene thin films

Science.gov (United States)

Miller, Richards; van Schooten, K. J.; Malissa, H.; Joshi, G.; Jamali, S.; Lupton, J. M.; Boehme, C.

2016-12-01

We have studied the role of spin-dependent processes on conductivity in polyfluorene (PFO) thin films by preforming continuous wave (cw) electrically detected magnetic resonance (EDMR) spectroscopy at temperatures between 10 K and room temperature using microwave frequencies between about 1 GHz and 20 GHz, as well as pulsed EDMR at the X band (10 GHz). Variable frequency EDMR allows us to establish the role of spin-orbit coupling in spin-dependent processes whereas pulsed EDMR allows for the observation of coherent spin motion effects. We used PFO for this study in order to allow for the investigation of the effects of microscopic morphological ordering since this material can adopt two distinct intrachain morphologies: an amorphous (glassy) phase, in which monomer units are twisted with respect to each other, and an ordered (β) phase, where all monomers lie within one plane. In thin films of organic light-emitting diodes, the appearance of a particular phase can be controlled by deposition parameters and solvent vapor annealing, and is verified by electroluminescence spectroscopy. Under bipolar charge-carrier injection conditions, we conducted multifrequency cw EDMR, electrically detected Rabi spin-beat experiments, and Hahn echo and inversion-recovery measurements. Coherent echo spectroscopy reveals electrically detected electron-spin-echo envelope modulation due to the coupling of the carrier spins to nearby nuclear spins. Our results demonstrate that, while conformational disorder can influence the observed EDMR signals, including the sign of the current changes on resonance as well as the magnitudes of local hyperfine fields and charge-carrier spin-orbit interactions, it does not qualitatively affect the nature of spin-dependent transitions in this material. In both morphologies, we observe the presence of at least two different spin-dependent recombination processes. At room temperature and 10 K, polaron-pair recombination through weakly spin-spin coupled

Spin-locking of half-integer quadrupolar nuclei in NMR of solids: The far off-resonance case.

Science.gov (United States)

Odedra, Smita; Wimperis, Stephen

Spin-locking of spin I=3/2 and I=5/2 nuclei in the presence of large resonance offsets has been studied using both approximate and exact theoretical approaches and, in the case of I=3/2, experimentally. We show the variety of coherences and population states produced in a far off-resonance spin-locking NMR experiment (one consisting solely of a spin-locking pulse) and how these vary with the radiofrequency field strength and offset frequency. Under magic angle spinning (MAS) conditions and in the "adiabatic limit", these spin-locked states acquire a time dependence. We discuss the rotor-driven interconversion of the spin-locked states, using an exact density matrix approach to confirm the results of the approximate model. Using conventional and multiple-quantum filtered spin-locking 23 Na (I=3/2) NMR experiments under both static and MAS conditions, we confirm the results of the theoretical calculations, demonstrating the applicability of the approximate theoretical model to the far off-resonance case. This simplified model includes only the effects of the initial rapid dephasing of coherences that occurs at the start of the spin-locking period and its success in reproducing both experimental and exact simulation data indicates that it is this dephasing that is the dominant phenomenon in NMR spin-locking of quadrupolar nuclei, as we have previously found for the on-resonance and near-resonance cases. Potentially, far off-resonance spin-locking of quadrupolar nuclei could be of interest in experiments such as cross polarisation as a consequence of the spin-locking pulse being applied to a better defined initial state (the thermal equilibrium bulk magnetisation aligned along the z-axis) than can be created in a powdered solid with a selective radiofrequency pulse, where the effect of the pulse depends on the orientation of the individual crystallites. Copyright © 2016 Elsevier Inc. All rights reserved.

Spin tunneling in magnetic molecules

Science.gov (United States)

Kececioglu, Ersin

In this thesis, we will focus on spin tunneling in a family of systems called magnetic molecules such as Fe8 and Mn12. This is comparatively new, in relation to other tunneling problems. Many issues are not completely solved and/or understood yet. The magnetic molecule Fe 8 has been observed to have a rich pattern of degeneracies in its magnetic spectrum. We focus on these degeneracies from several points of view. We start with the simplest anisotropy Hamiltonian to describe the Fe 8 molecule and extend our discussion to include higher order anisotropy terms. We give analytical expressions as much as we can, for the degeneracies in the semi-classical limit in both cases. We reintroduce jump instantons to the instanton formalism. Finally, we discuss the effect of the environment on the molecule. Our results, for all different models and techniques, agree well with both experimental and numerical results.

Resonant tunneling of UCN through the moving interference filter and experimental test of the UCN dispersion law

International Nuclear Information System (INIS)

Frank, A.I.; Bondarenko, I.V.; Balashov, S.N.; Geltenbort, P.; Hoghoj, P.; Kozlov, A.V.; Masalovich, S.V.; Toperverg, B.P.

2004-01-01

With the aim to test experimentally the dispersion law validity for very slow neutrons a spectrum of ultracold neutrons (UCN) under the condition of resonance tunneling through the moving Neutron Interference Filter was investigated. The neutron spectrum in this case has a narrow width resonance, whose parameters depend on the filter characteristics and dispersion law of neutron waves in matter. For a number of samples a noticeable shift of the resonance position when the filter moved parallel to its surface was detected. This shift is in strong contradiction with the commonly accepted dispersion law. Further investigations have shown that the spectrum of tunneling neutrons is not exactly defined by the solution of one-dimensional quantum problem, but substantially affected by neutron scattering from filter imperfections. The cross section of this scattering depends on the neutron wave number and increases dramatically in resonance conditions. Experimental results as well as comprehensive theoretical analysis have led us to the unambiguous conclusion that observed phenomena of the resonance shift in a moving sample are caused by scattering of neutron tunneling states rather than by a deviation from the commonly accepted dispersion law. (author)

Tunneling magnetoresistance and electroresistance in Fe/PbTiO{sub 3}/Fe multiferroic tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Dai, Jian-Qing, E-mail: djqkust@sina.com [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

2016-08-21

We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction with asymmetric TiO{sub 2}- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p{sub z} orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOX barriers

Science.gov (United States)

Newhouse-Illige, T.; Xu, Y. H.; Liu, Y. H.; Huang, S.; Kato, H.; Bi, C.; Xu, M.; LeRoy, B. J.; Wang, W. G.

2018-02-01

Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

Magnetic Field Dependence and Q of the Josephson Plasma Resonance

DEFF Research Database (Denmark)

Pedersen, Niels Falsig; Finnegan, T. F.; Langenberg, D. N.

1972-01-01

of supercurrent density which is not observed in conventional measurements of the field-dependent critical current. The frequency and field dependence of the plasma-resonance linewidth are interpreted as evidence that the previously unobserved quasiparticle-pair-interference tunnel current predicted by Josephson...

Strain-Induced Spin-Resonance Shifts in Silicon Devices

Science.gov (United States)

Pla, J. J.; Bienfait, A.; Pica, G.; Mansir, J.; Mohiyaddin, F. A.; Zeng, Z.; Niquet, Y. M.; Morello, A.; Schenkel, T.; Morton, J. J. L.; Bertet, P.

2018-04-01

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

Resonance fluorescence and electron spin in semiconductor quantum dots

Energy Technology Data Exchange (ETDEWEB)

Zhao, Yong

2009-11-18

The work presented in this dissertation contains the first observation of spin-resolved resonance fluorescence from a single quantum dot and its application of direct measurement of electron spin dynamics. The Mollow triplet and the Mollow quintuplet, which are the hallmarks of resonance fluorescence, are presented as the non-spin-resolved and spin-resolved resonance fluorescence spectrum, respectively. The negligible laser background contribution, the near pure radiative broadened spectrum and the anti-bunching photon statistics imply the sideband photons are background-free and near transform-limited single photons. This demonstration is a promising step towards the heralded single photon generation and electron spin readout. Instead of resolving spectrum, an alternative spin-readout scheme by counting resonance fluorescence photons under moderate laser power is demonstrated. The measurements of n-shot time-resolved resonance fluorescence readout are carried out to reveal electron spin dynamics of the measurement induced back action and the spin relaxation. Hyperfine interaction and heavy-light hole mixing are identified as the relevant mechanisms for the back action and phonon-assistant spin-orbit interaction dominates the spin relaxation. After a detailed discussion on charge-spin configurations in coupled quantum dots system, the single-shot readout on electron spin are proposed. (orig.)

Resonance fluorescence and electron spin in semiconductor quantum dots

International Nuclear Information System (INIS)

Zhao, Yong

2009-01-01

The work presented in this dissertation contains the first observation of spin-resolved resonance fluorescence from a single quantum dot and its application of direct measurement of electron spin dynamics. The Mollow triplet and the Mollow quintuplet, which are the hallmarks of resonance fluorescence, are presented as the non-spin-resolved and spin-resolved resonance fluorescence spectrum, respectively. The negligible laser background contribution, the near pure radiative broadened spectrum and the anti-bunching photon statistics imply the sideband photons are background-free and near transform-limited single photons. This demonstration is a promising step towards the heralded single photon generation and electron spin readout. Instead of resolving spectrum, an alternative spin-readout scheme by counting resonance fluorescence photons under moderate laser power is demonstrated. The measurements of n-shot time-resolved resonance fluorescence readout are carried out to reveal electron spin dynamics of the measurement induced back action and the spin relaxation. Hyperfine interaction and heavy-light hole mixing are identified as the relevant mechanisms for the back action and phonon-assistant spin-orbit interaction dominates the spin relaxation. After a detailed discussion on charge-spin configurations in coupled quantum dots system, the single-shot readout on electron spin are proposed. (orig.)

Electron spin resonance investigations on polycarbonate irradiated with U ions

Energy Technology Data Exchange (ETDEWEB)

Chipara, M.I.; Reyes-Romero, J

2001-12-01

Electron spin resonance investigations on polycarbonate irradiated with uranium ions are reported. The dependence of the resonance line parameters (line intensity, line width, double integral) on penetration depth and dose is studied. The nature of free radicals induced in polycarbonate by the incident ions is discussed in relation with the track structure. The presence of severe exchange interactions among free radicals is noticed.

Quantum revivals and magnetization tunneling in effective spin systems

International Nuclear Information System (INIS)

Krizanac, M; Altwein, D; Vedmedenko, E Y; Wiesendanger, R

2016-01-01

Quantum mechanical objects or nano-objects have been proposed as bits for information storage. While time-averaged properties of magnetic, quantum-mechanical particles have been extensively studied experimentally and theoretically, experimental investigations of the real time evolution of magnetization in the quantum regime were not possible until recent developments in pump–probe techniques. Here we investigate the quantum dynamics of effective spin systems by means of analytical and numerical treatments. Particular attention is paid to the quantum revival time and its relation to the magnetization tunneling. The quantum revival time has been initially defined as the recurrence time of a total wave-function. Here we show that the quantum revivals of wave-functions and expectation values in spin systems may be quite different which gives rise to a more sophisticated definition of the quantum revival within the realm of experimental research. Particularly, the revival times for integer spins coincide which is not the case for half-integer spins. Furthermore, the quantum revival is found to be shortest for integer ratios between the on-site anisotropy and an external magnetic field paving the way to novel methods of anisotropy measurements. We show that the quantum tunneling of magnetization at avoided level crossing is coherent to the quantum revival time of expectation values, leading to a connection between these two fundamental properties of quantum mechanical spins. (paper)

Spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor structures

International Nuclear Information System (INIS)

Li, Hong; Yang, Wei; Yang, Xinjian; Qin, Minghui; Guo, Jianqin

2007-01-01

Taking into account the thickness of the ferromagnetic insulator, the spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions is studied based on the Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the subgap resonance peaks. The spin polarization due to the spin-filter effect of the FI causes an imbalance of the peaks heights and can enhance the Zeeman splitting of the gap peaks caused by an applied magnetic field. The spin-filter effect has no contribution to the proximity-effect-induced superconductivity in NM interlayer

Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °C.

Science.gov (United States)

Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Park, Jea-Gun

2016-12-02

For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co 2 Fe 6 B 2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt ): it peaked (∼134%) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co 2 Fe 6 B 2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.

Influence of External Magnetic Fields on Tunneling of Spin-1 Bose Condensate

International Nuclear Information System (INIS)

Yu Zhaoxian; Jiao Zhiyong; Sun Jinzuo

2005-01-01

In this letter, we have studied the influence of the external magnetic fields on tunneling of the spin-1 Bose condensate. We find that the population transfer between spin-0 and spin-±1 exhibits the step structure under the external cosinusoidal magnetic field and a combination of static and cosinusoidal one, respectively. Compared with the longitudinal component of the external magnetic field, the smaller the transverse component of the magnetic field is, the larger the time scale of exhibiting the step structure does. The tunneling current may exhibit periodically oscillation behavior when the ratio of the transverse component of the magnetic field is smaller than that of the longitudinal component, otherwise it exhibits a damply oscillating behavior. This means that the dynamical spin localization can be adjusted by the external magnetic fields.

Controllable resonant tunnelling through single-point potentials: A point triode

International Nuclear Information System (INIS)

Zolotaryuk, A.V.; Zolotaryuk, Yaroslav

2015-01-01

A zero-thickness limit of three-layer heterostructures under two bias voltages applied externally, where one of which is supposed to be a gate parameter, is studied. As a result, an effect of controllable resonant tunnelling of electrons through single-point potentials is shown to exist. Therefore the limiting structure may be termed a “point triode” and considered in the theory of point interactions as a new object. The simple limiting analytical expressions adequately describe the resonant behaviour in the transistor with realistic parameter values and thus one can conclude that the zero-range limit of multi-layer structures may be used in fabricating nanodevices. The difference between the resonant tunnelling across single-point potentials and the Fabry–Pérot interference effect is also emphasized. - Highlights: • The zero-thickness limit of three-layer heterostructures is described in terms of point interactions. • The effect of resonant tunnelling through these single-point potentials is established. • The resonant tunnelling is shown to be controlled by a gate voltage

Ultrafast demagnetization enhancement in CoFeB/MgO/CoFeB magnetic tunneling junction driven by spin tunneling current.

Science.gov (United States)

He, Wei; Zhu, Tao; Zhang, Xiang-Qun; Yang, Hai-Tao; Cheng, Zhao-Hua

2013-10-07

The laser-induced ultrafast demagnetization of CoFeB/MgO/CoFeB magnetic tunneling junction is exploited by time-resolved magneto-optical Kerr effect (TRMOKE) for both the parallel state (P state) and the antiparallel state (AP state) of the magnetizations between two magnetic layers. It was observed that the demagnetization time is shorter and the magnitude of demagnetization is larger in the AP state than those in the P state. These behaviors are attributed to the ultrafast spin transfer between two CoFeB layers via the tunneling of hot electrons through the MgO barrier. Our observation indicates that ultrafast demagnetization can be engineered by the hot electrons tunneling current. It opens the door to manipulate the ultrafast spin current in magnetic tunneling junctions.

Thermoelectric-induced spin currents in single-molecule magnet tunnel junctions

Science.gov (United States)

Zhang, Zhengzhong; Jiang, Liang; Wang, Ruiqiang; Wang, Baigeng; Xing, D. Y.

2010-12-01

A molecular spin-current generator is proposed, which consists of a single-molecule magnet (SMM) coupled to two normal metal electrodes with temperature gradient. It is shown that this tunneling junction can generate a highly spin-polarized current by thermoelectric effects, whose flowing direction and spin polarization can be changed by adjusting the gate voltage applied to the SMM. This device can be realized with current technologies and may have practical use in spintronics and quantum information.

Resonant tunnelling and negative differential conductance in graphene transistors

Science.gov (United States)

Britnell, L.; Gorbachev, R. V.; Geim, A. K.; Ponomarenko, L. A.; Mishchenko, A.; Greenaway, M. T.; Fromhold, T. M.; Novoselov, K. S.; Eaves, L.

2013-04-01

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.

Theoretical foundations of electron spin resonance

CERN Document Server

Harriman, John E

2013-01-01

Theoretical Foundations of Electron Spin Resonance deals with the theoretical approach to electron paramagnetic resonance. The book discusses electron spin resonance in applications related to polyatomic, probably organic, free radicals in condensed phases. The book also focuses on essentially static phenomena, that is, the description and determination of stationary-state energy levels. The author reviews the Dirac theory of the electron in which a four-component wave function is responsible for the behavior of the electron. The author then connects this theory with the nonrelativistic wave f

Spin-dependent transport in ferromagnet/semiconductor/ferromagnet junctions: a fully relativistic approach

International Nuclear Information System (INIS)

Popescu, Voicu; Ebert, Hubert; Papanikolaou, Nikolaos; Zeller, Rudolf; Dederichs, Peter H

2004-01-01

We present a fully relativistic generalization of the Landauer-Buettiker formalism that has been implemented within the framework of the spin-polarized relativistic screened Korringa-Kohn-Rostoker Green function method. This approach, going beyond the two-current model, supplies a more general description of the electronic transport. It is shown that the relativistic conductance can be split in terms of individual spin-diagonal and spin-off-diagonal (spin-flip) components, which allows a detailed analysis of the influence of spin-orbit-coupling-induced spin-flip processes on the spin-dependent transport. We apply our method to calculate the ballistic conductance in Fe/GaAs/Fe magnetic tunnel junctions. We find that, by removing the spin selection rules, the spin-orbit coupling strongly influences the conductance, not only qualitatively but also quantitatively, especially in the anti-parallel alignment of the magnetization in the two Fe leads

Anomalous Tunnel Magnetoresistance and Spin Transfer Torque in Magnetic Tunnel Junctions with Embedded Nanoparticles

Science.gov (United States)

Useinov, Arthur; Ye, Lin-Xiu; Useinov, Niazbeck; Wu, Te-Ho; Lai, Chih-Huang

2015-01-01

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and non-magnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in leterature. PMID:26681336

Angular-dependent EDMR linewidth for spin-dependent space charge limited conduction in a polycrystalline pentacene

Science.gov (United States)

Fukuda, Kunito; Asakawa, Naoki

2017-08-01

Spin-dependent space charge limited carrier conduction in a Schottky barrier diode using polycrystalline p-type π-conjugated molecular pentacene is explored using multiple-frequency electrically detected magnetic resonance (EDMR) spectroscopy with a variable-angle configuration. The measured EDMR spectra are decomposed into two components derived respectively from mobile and trapped positive polarons. The linewidth of the EDMR signal for the trapped polarons increases with increasing resonance magnetic field for an in-plane configuration where the normal vector of the device substrate is perpendicular to the resonance magnetic field, while it is independent of the field for an out-of-plane configuration. This difference is consistent with the pentacene arrangement on the device substrate, where pentacene molecules exhibit a uniaxial orientation on the out-of-substrate plane. By contrast, the mobile polarons do not show anisotropic behavior with respect to the resonance magnetic field, indicating that the anisotropic effect is averaged out owing to carrier motion. These results suggest that the orientational arrangements of polycrystalline pentacene molecules in a nano thin film play a crucial role in spin-dependent electrical conduction.

The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

Directory of Open Access Journals (Sweden)

Z. H. Zhang

2015-03-01

Full Text Available The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

Spin-locking of half-integer quadrupolar nuclei in nuclear magnetic resonance of solids: second-order quadrupolar and resonance offset effects.

Science.gov (United States)

Ashbrook, Sharon E; Wimperis, Stephen

2009-11-21

Spin-locking of spin I=3/2 and I=5/2 nuclei in the presence of small resonance offset and second-order quadrupolar interactions has been investigated using both exact and approximate theoretical and experimental nuclear magnetic resonance (NMR) approaches. In the presence of second-order quadrupolar interactions, we show that the initial rapid dephasing that arises from the noncommutation of the state prepared by the first pulse and the spin-locking Hamiltonian gives rise to tensor components of the spin density matrix that are antisymmetric with respect to inversion, in addition to those symmetric with respect to inversion that are found when only a first-order quadrupolar interaction is considered. We also find that spin-locking of multiple-quantum coherence in a static solid is much more sensitive to resonance offset than that of single-quantum coherence and show that good spin-locking of multiple-quantum coherence can still be achieved if the resonance offset matches the second-order shift of the multiple-quantum coherence in the appropriate reference frame. Under magic angle spinning (MAS) conditions, and in the "adiabatic" limit, we demonstrate that rotor-driven interconversion of central-transition single- and three-quantum coherences for a spin I=3/2 nucleus can be best achieved by performing the spin-locking on resonance with the three-quantum coherence in the three-quantum frame. Finally, in the "sudden" MAS limit, we show that spin I=3/2 spin-locking behavior is generally similar to that found in static solids, except when the central-transition nutation rate matches a multiple of the MAS rate and a variety of rotary resonance phenomena are observed depending on the internal spin interactions present. This investigation should aid in the application of spin-locking techniques to multiple-quantum NMR of quadrupolar nuclei and of cross-polarization and homonuclear dipolar recoupling experiments to quadrupolar nuclei such as (7)Li, (11)B, (17)O, (23)Na, and

Spin-resolved tunneling studies of the exchange field in EuS/Al bilayers.

Science.gov (United States)

Xiong, Y M; Stadler, S; Adams, P W; Catelani, G

2011-06-17

We use spin-resolved electron tunneling to study the exchange field in the Al component of EuS/Al bilayers, in both the superconducting and normal-state phases of the Al. Contrary to expectation, we show that the exchange field H(ex) is a nonlinear function of applied field, even in applied fields that are well beyond the EuS coercive field. Furthermore, the magnitude H(ex) is unaffected by the superconducting phase. In addition, H(ex) decreases significantly with increasing temperature in the temperature range of 0.1-1 K. We discuss these results in the context of recent theories of generalized spin-dependent boundary conditions at a superconductor-ferromagnet interface.

Energy relaxation between low lying tunnel split spin-states of the single molecule magnet Ni4

Science.gov (United States)

de Loubens, G.; Chaves-O'Flynn, G. D.; Kent, A. D.; Ramsey, C.; Del Barco, E.; Beedle, C.; Hendrickson, D. N.

2007-03-01

We have developed integrated magnetic sensors to study quantum tunneling of magnetization (QTM) in single molecule magnet (SMMs) single crystals. These sensors incorporate a microstrip resonator (30 GHz) and a micro-Hall effect magnetometer. They have been used to investigate the relaxation rates between the 2 lowest lying tunnel split spin-states of the SMM Ni4 (S=4). EPR spectroscopy at 30 GHz and 0.4 K and concurrent magnetization measurements of several Ni4 single crystals are presented. EPR enables measurement of the energy splitting between the 2 lowest lying superposition states as a function of the longitudinal and transverse fields. The energy relaxation rate is determined in two ways. First, in cw microwave experiments the change in spin-population together with the microwave absorption directly gives the relaxation time from energy conservation in steady-state. Second, direct time-resolved measurements of the magnetization with pulsed microwave radiation have been performed. The relaxation time is found to vary by several orders of magnitude in different crystals, from a few seconds down to smaller than 100 μs. We discuss this and the form of the relaxation found for different crystals and pulse conditions.

Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling.

Science.gov (United States)

Schoonus, J J H M; Lumens, P G E; Wagemans, W; Kohlhepp, J T; Bobbert, P A; Swagten, H J M; Koopmans, B

2009-10-02

By combining experiments with simple model calculations, we obtain new insight in spin transport through hybrid, CoFeB/Al2O3(1.5 nm)/tris(8-hydroxyquinoline)aluminium (Alq3)/Co spin valves. We have measured the characteristic changes in the I-V behavior as well as the intrinsic loss of magnetoresistance at the onset of multiple-step tunneling. In the regime of multiple-step tunneling, under the condition of low hopping rates, spin precession in the presence of hyperfine coupling is conjectured to be the relevant source of spin relaxation. A quantitative analysis leads to the prediction of a symmetric magnetoresistance around zero magnetic field in addition to the hysteretic magnetoresistance curves, which are indeed observed in our experiments.

Spin-Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene

Science.gov (United States)

2017-11-09

Polarized Scanning Tunneling Microscope for Atomic-Scale Studies of Spin Transport, Spin Relaxation, and Magnetism in Graphene Report Term: 0-Other Email ...Principal: Y Name: Jay A Gupta Email : gupta.208@osu.edu Name: Roland K Kawakami Email : kawakami.15@osu.edu RPPR Final Report as of 13-Nov-2017...studies on films and devices. Optimization of the Cr tip will be the next important step to establish this technique. We are writing up these early

Two-body tunnel transitions in a Mn 4 single-molecule magnet

Science.gov (United States)

Wernsdorfer, W.; Bhaduri, S.; Tiron, R.; Hendrickson, D. N.; Christou, G.

2004-05-01

The one-body tunnel picture of single-molecule magnets (SMMs) is not always sufficient to explain the measured tunnel transitions. An improvement to the picture is proposed by including also two-body tunnel transitions such as spin-spin cross-relaxation (SSCR) which are mediated by dipolar and weak superexchange interactions between molecules. A Mn 4 SMM is used as a model system. At certain external fields, SSCRs lead to additional quantum resonances which show up in hysteresis loop measurements as well-defined steps.

Resonant tunneling quantum waveguides of variable cross-section, asymptotics, numerics, and applications

CERN Document Server

Baskin, Lev; Plamenevskii, Boris; Sarafanov, Oleg

2015-01-01

This volume studies electron resonant tunneling in two- and three-dimensional quantum waveguides of variable cross-sections in the time-independent approach. Mathematical models are suggested for the resonant tunneling and develop asymptotic and numerical approaches for investigating the models. Also, schemes are presented for several electronics devices based on the phenomenon of resonant tunneling.   Devices based on the phenomenon of electron resonant tunneling are widely used in electronics. Efforts are directed towards refining properties of resonance structures. There are prospects for building new nanosize electronics elements based on quantum dot systems.   However, the role of resonance structure can also be given to a quantum wire of variable cross-section. Instead of an "electrode - quantum dot - electrode" system, one can use a quantum wire with two narrows. A waveguide narrow is an effective potential barrier for longitudinal electron motion along a waveguide. The part of the waveguide between ...

Spin tunneling in magnetic molecules: Quantitative estimates for Fe8 clusters

Science.gov (United States)

Galetti, D.; Silva, Evandro C.

2007-12-01

Spin tunneling in the particular case of the magnetic molecular cluster octanuclear iron(III), Fe8, is treated by an effective Hamiltonian that allows for an angle-based description of the process. The presence of an external magnetic field along the easy axis is also taken into account in this description. Analytic expressions for the energy levels and barriers are obtained from a harmonic approximation of the potential function which give results in good agreement with the experimental results. The energy splittings due to spin tunneling is treated in an adapted WKB approach and it is shown that the present description can give results to a reliable degree of accuracy.

Spin-3/2 Pentaquark Resonance Signature

International Nuclear Information System (INIS)

Ben Lasscock; John Hedditch; Derek Leinweber; Anthony Williams; Waseem Kamleh; Wolodymyr Melnitchouk; Anthony Thomas; Ross Young; James Zanotti

2005-01-01

We search for the standard lattice resonance signature of attraction between the resonance constituents which leads to a bound state at quark masses near the physical regime. We study a variety of spin-1/2 interpolators and for the first time, interpolators providing access to spin-3/2 pentaquark states. In looking for evidence of binding, a precise determination of the mass splitting between the pentaquark state and its lowest-lying decay channel is performed by constructing the effective mass splitting from the various two-point correlation functions. While the binding of the pentaquark state is not a requirement, the observation of such binding would provide compelling evidence for the existence of the theta+ pentaquark resonance. Evidence of binding is observed in the isoscalar spin-3/2 positive parity channel, making it an interesting state for further research

Contact induced spin relaxation in graphene spin valves with Al2O3 and MgO tunnel barriers

Directory of Open Access Journals (Sweden)

Walid Amamou

2016-03-01

Full Text Available We investigate spin relaxation in graphene by systematically comparing the roles of spin absorption, other contact-induced effects (e.g., fringe fields, and bulk spin relaxation for graphene spin valves with MgO barriers, Al2O3 barriers, and transparent contacts. We obtain effective spin lifetimes by fitting the Hanle spin precession data with two models that include or exclude the effect of spin absorption. Results indicate that additional contact-induced spin relaxation other than spin absorption dominates the contact effect. For tunneling contacts, we find reasonable agreement between the two models with median discrepancy of ∼20% for MgO and ∼10% for Al2O3.

Electron spin-lattice relaxation mechanisms of radiation produced trapped electrons and hydrogen atoms in aqueous and organic glassy matrices. Modulation of electron nuclear dipolar interaction by tunnelling modes in a glassy matrix. [. gamma. rays

Energy Technology Data Exchange (ETDEWEB)

Bowman, M K; Kevan, L [Wayne State Univ., Detroit, Mich. (USA). Dept. of Chemistry

1977-01-01

The spin lattice relaxation of trapped electrons in aqueous and organic glasses and trapped hydrogen atoms in phosphoric acid glass has been directly studied as a function of temperature by the saturation recovery method. Below 50 to 100 K, the major spin lattice relaxation mechanism involves modulation of the electron nuclear dipolar (END) interaction with nuclei in the radical's environment by tunnelling of those nuclei between two or more positions. This relaxation mechanism occurs with high efficiency and has a characteristic linear temperature dependence. The tunnelling nuclei around trapped electrons do not seem to involve the nearest neighbor nuclei which are oriented by the electron in the process of solvation. Instead the tunnelling nuclei typically appear to be next nearest neighbors to the trapped electron. The identities of the tunnelling nuclei have been deduced by isotopic substitution and are attributed to: Na in 10 mol dm/sup -3/ NaOH aqueous glass, ethyl protons in ethanol glass, methyl protons in methanol glass and methyl protons in MTHF glass. For trapped hydrogen atoms in phosphoric acid, the phosphorus nuclei appear to be the effective tunnelling nuclei. Below approximately 10 K the spin lattice relaxation is dominated by a temperature independent cross relaxation term for H atoms in phosphoric acid glass and for electrons in 10 mol dm/sup -3/ NaOH aqueous glass, but not for electrons in organic glasses. This is compared with recent electron-electron double resonance studies of cross relaxation in these glasses. The spin lattice relaxation of O/sup -/ formed in 10 mol dm/sup -3/ NaOH aqueous glass was also studied and found to be mainly dominated by a Raman process with an effective Debye temperature of about 100 K.

Self-consistent modelling of resonant tunnelling structures

DEFF Research Database (Denmark)

Fiig, T.; Jauho, A.P.

1992-01-01

We report a comprehensive study of the effects of self-consistency on the I-V-characteristics of resonant tunnelling structures. The calculational method is based on a simultaneous solution of the effective-mass Schrödinger equation and the Poisson equation, and the current is evaluated...... applied voltages and carrier densities at the emitter-barrier interface. We include the two-dimensional accumulation layer charge and the quantum well charge in our self-consistent scheme. We discuss the evaluation of the current contribution originating from the two-dimensional accumulation layer charges......, and our qualitative estimates seem consistent with recent experimental studies. The intrinsic bistability of resonant tunnelling diodes is analyzed within several different approximation schemes....

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

Science.gov (United States)

Franke, David P.; Hoehne, Felix; Vlasenko, Leonid S.; Itoh, Kohei M.; Brandt, Martin S.

2014-05-01

Spin-dependent relaxation and recombination processes in γ-irradiated n-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between 31P donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics is studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin-1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.

Angular-Dependent EDMR Linewidth for Spin-Dependent Space-Charge-Limited Conduction in a Polycrystalline Pentacene

Directory of Open Access Journals (Sweden)

Kunito Fukuda

2017-08-01

Full Text Available Spin-dependent space-charge-limited carrier conduction in a Schottky barrier diode using polycrystalline p-type π-conjugated molecular pentacene is explored using multiple-frequency electrically detected magnetic resonance (EDMR spectroscopy with a variable-angle configuration. The measured EDMR spectra are decomposed into two components derived, respectively, from mobile and trapped positive polarons. The linewidth of the EDMR signal for the trapped polarons increases with increasing resonance magnetic field for an in-plane configuration where the normal vector of the device substrate is perpendicular to the resonance magnetic field, while it is independent of the field for an out-of-plane configuration. This difference is consistent with the pentacene arrangement on the device substrate, where pentacene molecules exhibit a uniaxial orientation on the out-of-substrate plane. By contrast, the mobile polarons do not show anisotropic behavior with respect to the resonance magnetic field, indicating that the anisotropic effect is averaged out owing to carrier motion. These results suggest that the orientational arrangements of polycrystalline pentacene molecules in a nano thin film play a crucial role in spin-dependent electrical conduction.

Tunnel splitting for a high-spin molecule in an in-plane field

Science.gov (United States)

Zhu, Jia-Lin

2000-08-01

Direction and strength effects of a magnetic field on the ground-state tunnel splitting for a biaxial spin molecule with the model Hamiltonian H = k1Sz2 + k2Sy2- gµBHzSz- gµBHySy have been investigated within a continuous-spin approach including the Wess-Zumino-Berry term. The topological oscillation and the non-Kramers freezing indicated in the approach are in agreement with those observed in a recent experiment on Fe8 molecular nanomagnets. The behaviour of tunnel splitting with multiple orbits induced by strong fields has been revealed clearly.

Resonant Magnetization Tunneling in Molecular Magnets: Where is the Inhomogeneous Broadening?

Science.gov (United States)

Friedman, Jonathan R.; Sarachik, M. P.

1998-03-01

Since the discovery(J. R. Friedman, et al., Phys. Rev. Lett. 76), 3830 (1996) of resonant magnetization tunneling in the molecular magnet Mn_12 there has been intense research into the underlying mechanism of tunneling. Most current theories( V. Dobrovitski and A. Zvezdin, Europhys. Lett. 38), 377 (1997); L. Gunther, Europhys. Lett. 39, 1 (1997); D Garanin and E. Chudnovsky, Phys. Rev. B 56, 11102 (1997). suggest that a local internal (hyperfine or dipole) field transverse to the easy magnetization axis induces tunneling. These theories predict a resonance width orders of magnitude smaller than that actually observed. This discrepancy is attributed to inhomogeneous broadening of the resonance by the random internal fields. We present a detailed study of the tunnel resonance lineshape and show that it is Lorentzian, suggesting it has a deeper physical origin. Since the hyperfine fields are believed to be comparable to the observed width, it is surprising that there is no Gaussian broadening.

Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

Science.gov (United States)

Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

2017-10-26

The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

Dielectric resonance in ErFeO3 in the region of spin reorientation

International Nuclear Information System (INIS)

Dan'shin, N.K.; Kovtun, N.M.; Sdvizhkov, M.A.

1984-01-01

In the region of spin reorientation in ErFeO 3 in the millimetre wave range a dielectric resonance has been found - excitation of electromaqnetic field natural oscillations in spherical samples. The fregurncies of dielectric resonance in samples from ErFeO 3 possess strong independence of temperature and magnetic field in the vicinity of the spin reorientation for account of a strong growth in the magnetic susceptibility. The frequencies change most considerably in the region of low-temperature spin reorientation related to antiferromagnetic rare earth ordering. Strong anisotropy of magnetic susceptibility cases various temperature and field dependences of the dielectric resonance frequencies at different orientations of the exciting electromagnetic field relative to the crystal axes. It is shown that the method of dielectric resonance permits to determine with high accuracy the temperatures of spontaneous - and crystal fields of induced phase transformations. The crystal dielectric permittivity and magnetic permeability dispersion are determined

Superluminal tunneling of a relativistic half-integer spin particle through a potential barrier

Directory of Open Access Journals (Sweden)

Nanni Luca

2017-11-01

Full Text Available This paper investigates the problem of a relativistic Dirac half-integer spin free particle tunneling through a rectangular quantum-mechanical barrier. If the energy difference between the barrier and the particle is positive, and the barrier width is large enough, there is proof that the tunneling may be superluminal. For first spinor components of particle and antiparticle states, the tunneling is always superluminal regardless the barrier width. Conversely, the second spinor components of particle and antiparticle states may be either subluminal or superluminal depending on the barrier width. These results derive from studying the tunneling time in terms of phase time. For the first spinor components of particle and antiparticle states, it is always negative while for the second spinor components of particle and antiparticle states, it is always positive, whatever the height and width of the barrier. In total, the tunneling time always remains positive for particle states while it becomes negative for antiparticle ones. Furthermore, the phase time tends to zero, increasing the potential barrier both for particle and antiparticle states. This agrees with the interpretation of quantum tunneling that the Heisenberg uncertainty principle provides. This study’s results are innovative with respect to those available in the literature. Moreover, they show that the superluminal behaviour of particles occurs in those processes with high-energy confinement.

Magnetic resonance, especially spin echo, in spinor Bose-Einstein condensates

International Nuclear Information System (INIS)

Yasunaga, Masashi; Tsubota, Makoto

2009-01-01

Magnetic resonance, especially NMR and ESR, has been studied in magnetic materials for a long time, having been used in various fields. Spin echo is typical phenomenon in magnetic resonance. The magnetic resonance should be applied to spinor Bose-Einstein condensates (BECs). We numerically study spin echo of a spinor BEC in a gradient magnetic field by calculating the spin-1 two-dimensional Gross-Pitaevskii equations, obtaining the recovery of the signal of the spins, which is called spin echo. We will discuss the relation between the spin echo and the Stern-Gelrach separation in the system.

Spin-filter scanning tunneling microscopy : a novel technique for the analysis of spin polarization on magnetic surfaces and spintronic devices

NARCIS (Netherlands)

Vera Marun, I.J.

2010-01-01

This thesis deals with the development of a versatile technique to measure spin polarization with atomic resolution. A microscopy technique that can measure electronic spin polarization is relevant for characterization of magnetic nanostructures and spintronic devices. Scanning tunneling microscopy

Negative tunneling magnetoresistance of Fe/MgO/NiO/Fe magnetic tunnel junction: Role of spin mixing and interface state

Science.gov (United States)

Zhang, Y.; Yan, X. H.; Guo, Y. D.; Xiao, Y.

2017-08-01

Motivated by a recent tunneling magnetoresistance (TMR) measurement in which the negative TMR is observed in MgO/NiO-based magnetic tunnel junctions (MTJs), we have performed systematic calculations of transmission, current, and TMR of Fe/MgO/NiO/Fe MTJ with different thicknesses of NiO and MgO layers based on noncollinear density functional theory and non-equilibrium Green's function theory. The calculations show that, as the thickness of NiO and MgO layers is small, the negative TMR can be obtained which is attributed to the spin mixing effect and interface state. However, in the thick MTJ, the spin-flipping scattering becomes weaker, and thus, the MTJs recover positive TMR. Based on our theoretical results, we believe that the interface state at Fe/NiO interface and the spin mixing effect induced by noncollinear interfacial magnetization will play important role in determining transmission and current of Fe/MgO/NiO/Fe MTJ. The results reported here will be important in understanding the electron tunneling in MTJ with the barrier made by transition metal oxide.

Evaluation of resonant tunneling transmission coefficient from multilayer structures GaAlAs/GaAs

Directory of Open Access Journals (Sweden)

L. Moghaddasi

2003-12-01

Full Text Available   A theoretical study of resonant tunneling in multilayered GaAlAs/GaAs structures are presented. The spectrum of resonant energies and its dependence on the barrier structure are analyzed from calculated profiles of barrier transparency versus energy, and from current voltage characteristics computed at selected temperatures and Fermi levels. The present formalism is based on the effective mass approximation and results are via direct numerical evaluations.

Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

DEFF Research Database (Denmark)

Li, H.W.; Kardynal, Beata; Ellis, D.J.P.

2008-01-01

Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality res...

Measured Temperature Dependence of the cos-phi Conductance in Josephson Tunnel Junctions

DEFF Research Database (Denmark)

Sørensen, O. H.; Mygind, Jesper; Pedersen, Niels Falsig

1977-01-01

The temperature dependence of the cosϕ conductance in Sn-O-Sn Josephson tunnel junctions has been measured just below the critical temperature, Tc. From the resonant microwave response at the junction plasma frequency as the temperature is decreased from Tc it is deduced that the amplitude of the...

Comparison of Magnetization Tunneling in the Giant-Spin and Multi-Spin Descriptions of Single-Molecule Magnets

Science.gov (United States)

Liu, Junjie; Del Barco, Enrique; Hill, Stephen

2010-03-01

We perform a mapping of the spectrum obtained for a triangular Mn3 single-molecule magnet (SMM) with idealized C3 symmetry via exact diagonalization of a multi-spin (MS) Hamiltonian onto that of a giant-spin (GS) model which assumes strong ferromagnetic coupling and a spin S = 6 ground state. Magnetic hysteresis measurements on this Mn3 SMM reveal clear evidence that the steps in magnetization due to magnetization tunneling obey the expected quantum mechanical selection rules [J. Henderson et al., Phys. Rev. Lett. 103, 017202 (2009)]. High-frequency EPR and magnetization data are first fit to the MS model. The tunnel splittings obtained via the two models are then compared in order to find a relationship between the sixth order transverse anisotropy term B6^6 in GS model and the exchange constant J coupling the Mn^III ions in the MS model. We also find that the fourth order transverse term B4^3 in the GS model is related to the orientation of JahnTeller axes of Mn^III ions, as well as J

Interface-induced chiral domain walls, spin spirals and skyrmions revealed by spin-polarized scanning tunneling microscopy.

Science.gov (United States)

von Bergmann, Kirsten; Kubetzka, André; Pietzsch, Oswald; Wiesendanger, Roland

2014-10-01

The spin textures of ultra-thin magnetic layers exhibit surprising variety. The loss of inversion symmetry at the interface of the magnetic layer and substrate gives rise to the so-called Dzyaloshinskii-Moriya interaction which favors non-collinear spin arrangements with unique rotational sense. Here we review the application of spin-polarized scanning tunneling microscopy to such systems, which has led to the discovery of interface-induced chiral domain walls and spin spirals. Recently, different interface-driven skyrmion lattices have been found, and the writing as well as the deleting of individual skyrmions based on local spin-polarized current injection has been demonstrated. These interface-induced non-collinear magnetic states offer new exciting possibilities to study fundamental magnetic interactions and to tailor material properties for spintronic applications.

Angular dependence of spin-orbit spin-transfer torques

KAUST Repository

Lee, Ki-Seung

2015-04-06

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Angular dependence of spin-orbit spin-transfer torques

KAUST Repository

Lee, Ki-Seung; Go, Dongwook; Manchon, Aurelien; Haney, Paul M.; Stiles, M. D.; Lee, Hyun-Woo; Lee, Kyung-Jin

2015-01-01

In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

Science.gov (United States)

Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

2018-05-01

We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

Coherence in Magnetic Quantum Tunneling

Science.gov (United States)

Fernandez, Julio F.

2001-03-01

Crystals of single molecule magnets such as Mn_12 and Fe8 behave at low temperatures as a collection of independent spins. Magnetic anisotropy barriers slow down spin-flip processes. Their rate Γ becomes temperature independent at sufficiently low temperature. Quantum tunneling (QT) accounts for this behavior. Currently, spin QT in Mn_12 and Fe8 is assumed to proceed as an incoherent sum of small probability increments that occur whenever a bias field h(t) (arising from hyperfine interactions with nuclear spins) that varies with time t becomes sufficiently small, as in Landau-Zener transitions. Within a two-state model, we study the behavior of a suitably defined coherence time τ_φ and compare it with the correlation time τh for h(t). It turns out that τ_φ >τ_h, when τ_hδ h < hbar, where δ h is the rms deviation of h. We show what effect such coherence has on Γ. Its dependence on a static longitudinal applied field Hz is drastically affected. There is however no effect if the field is swept through resonance.

CONDITIONS OF PASSAGE AND ENTRAPMENT OF TERRESTRIAL PLANETS IN SPIN-ORBIT RESONANCES

International Nuclear Information System (INIS)

Makarov, Valeri V.

2012-01-01

The dynamical evolution of terrestrial planets resembling Mercury in the vicinity of spin-orbit resonances is investigated using comprehensive harmonic expansions of the tidal torque taking into account the frequency-dependent quality factors and Love numbers. The torque equations are integrated numerically with a small step in time, including the oscillating triaxial torque components but neglecting the layered structure of the planet and assuming a zero obliquity. We find that a Mercury-like planet with a current value of orbital eccentricity (0.2056) is always captured in 3:2 resonance. The probability of capture in the higher 2:1 resonance is approximately 0.23. These results are confirmed by a semi-analytical estimation of capture probabilities as functions of eccentricity for both prograde and retrograde evolutions of spin rate. As follows from analysis of equilibrium torques, entrapment in 3:2 resonance is inevitable at eccentricities between 0.2 and 0.41. Considering the phase space parameters at the times of periastron, the range of spin rates and phase angles for which an immediate resonance passage is triggered is very narrow, and yet a planet like Mercury rarely fails to align itself into this state of unstable equilibrium before it traverses 2:1 resonance.

Electron Spin Resonance in CuSO45H2O down to 100 mK

Science.gov (United States)

Kadowaki, Kazuo; Chiba, Yoshiaki; Kindo, Koichi; Date, Muneyuki

1988-12-01

Copper sulfate pentahydrate CuSO45H2O is investigated by ESR at 9, 17, 24, 35 and 50 GHz regions down to about 100 mK using a combined cryostat of 3He and adiabatic demagnetization. The temperature dependent exchange interaction JAB between inequivalent site spins A and B is found. It is about 0.11 K at room temperature and increases with decreasing temperature up to 0.24 K. Temperature dependent resonance shifts are attributed to the exchange shift coming from non-resonant dissimilar spins. Partial order effect below 1 K is discussed.

PREFACE: Spin Electronics

Science.gov (United States)

Dieny, B.; Sousa, R.; Prejbeanu, L.

2007-04-01

Conventional electronics has in the past ignored the spin on the electron, however things began to change in 1988 with the discovery of giant magnetoresistance in metallic thin film stacks which led to the development of a new research area, so called spin-electronics. In the last 10 years, spin-electronics has achieved a number of breakthroughs from the point of view of both basic science and application. Materials research has led to several major discoveries: very large tunnel magnetoresistance effects in tunnel junctions with crystalline barriers due to a new spin-filtering mechanism associated with the spin-dependent symmetry of the electron wave functions new magnetic tunnelling barriers leading to spin-dependent tunnelling barrier heights and acting as spin-filters magnetic semiconductors with increasingly high ordering temperature. New phenomena have been predicted and observed: the possibility of acting on the magnetization of a magnetic nanostructure with a spin-polarized current. This effect, due to a transfer of angular momentum between the spin polarized conduction electrons and the local magnetization, can be viewed as the reciprocal of giant or tunnel magnetoresistance. It can be used to switch the magnetization of a magnetic nanostructure or to generate steady magnetic excitations in the system. the possibility of generating and manipulating spin current without charge current by creating non-equilibrium local accumulation of spin up or spin down electrons. The range of applications of spin electronics materials and phenomena is expanding: the first devices based on giant magnetoresistance were the magnetoresistive read-heads for computer disk drives. These heads, introduced in 1998 with current-in plane spin-valves, have evolved towards low resistance tunnel magnetoresistice heads in 2005. Besides magnetic recording technology, these very sensitive magnetoresistive sensors are finding applications in other areas, in particular in biology. magnetic

Resonant tunneling across a ferroelectric domain wall

Science.gov (United States)

Li, M.; Tao, L. L.; Velev, J. P.; Tsymbal, E. Y.

2018-04-01

Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with L a0.5S r0.5Mn O3 electrodes separated by a BaTi O3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTi O3 can be induced by polar interfaces. The resulting V -shaped electrostatic potential profile across the BaTi O3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum- and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.

Coherent and correlated spin transport in nanoscale superconductors

Energy Technology Data Exchange (ETDEWEB)

Morten, Jan Petter

2008-03-15

Motivated by the desire for better understanding of nano electronic systems, we theoretically study the conductance and noise characteristics of current flow between superconductors, ferromagnets, and normal-metals. Such nano structures can reveal information about superconductor proximity effects, spin-relaxation processes, and spintronic effects with potential applications for different areas of mesoscopic physics. We employ the quasiclassical theory of superconductivity in the Keldysh formalism, and calculate the nonequilibrium transport of spin and charge using various approaches like the circuit theory of quantum transport and full counting statistics. For two of the studied structures, we have been able to compare our theory to experimental data and obtain good agreement. Transport and relaxation of spin polarized current in superconductors is governed by energy-dependent transport coefficients and spin-flip rates which are determined by quantum interference effects. We calculate the resulting temperature-dependent spin flow in ferromagnet-superconductor devices. Experimental data for spin accumulation and spin relaxation in a superconducting nano wire is in agreement with the theory, and allows for a spin-flip spectroscopy that determines the dominant mechanism for spin-flip relaxation in the studied samples. A ferromagnet precessing under resonance conditions can give rise to pure spin current injection into superconductors. We find that the absorbed spin current is measurable as a temperature dependent Gilbert damping, which we calculate and compare to experimental data. Crossed Andreev reflection denotes superconducting pairing of electrons flowing from different normal-metal or ferromagnet terminals into a superconductor. We calculate the nonlocal currents resulting from this process in competition with direct electron transport between the normal-metal terminals. We take dephasing into account, and study the nonlocal current when the types of contact in

Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

International Nuclear Information System (INIS)

Akushichi, T.; Shuto, Y.; Sugahara, S.; Takamura, Y.

2015-01-01

We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO x /n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO x barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels

Absence of a spin-signature from a single Ho adatom as probed by spin-sensitive tunneling.

Science.gov (United States)

Steinbrecher, M; Sonntag, A; dos Santos Dias, M; Bouhassoune, M; Lounis, S; Wiebe, J; Wiesendanger, R; Khajetoorians, A A

2016-02-03

Whether rare-earth materials can be used as single-atom magnetic memory is an ongoing debate in recent literature. Here we show, by inelastic and spin-resolved scanning tunnelling-based methods, that we observe a strong magnetic signal and excitation from Fe atoms adsorbed on Pt(111), but see no signatures of magnetic excitation or spin-based telegraph noise for Ho atoms. Moreover, we observe that the indirect exchange field produced by a single Ho atom is negligible, as sensed by nearby Fe atoms. We demonstrate, using ab initio methods, that this stems from a comparatively weak coupling of the Ho 4f electrons with both tunnelling electrons and substrate-derived itinerant electrons, making both magnetic coupling and detection very difficult when compared to 3d elements. We discuss these results in the context of ongoing disputes and clarify important controversies.