Hysteresis loops of spin-dependent electronic current in a paramagnetic resonant tunnelling diode
International Nuclear Information System (INIS)
Wójcik, P; Spisak, B J; Wołoszyn, M; Adamowski, J
2012-01-01
Nonlinear properties of the spin-dependent electronic transport through a semiconductor resonant tunnelling diode with a paramagnetic quantum well are considered. The spin-dependent Wigner–Poisson model of the electronic transport and the two-current Mott’s formula for the independent spin channels are applied to determine the current–voltage curves of the nanodevice. Two types of the electronic current hysteresis loops are found in the current–voltage characteristics for both the spin components of the electronic current. The physical interpretation of these two types of the electronic current hysteresis loops is given based on the analysis of the spin-dependent electron densities and the potential energy profiles. The differences between the current–voltage characteristics for both the spin components of the electronic current allow us to explore the changes of the spin polarization of the current for different electric fields and determine the influence of the electronic current hysteresis on the spin polarization of the current flowing through the paramagnetic resonant tunnelling diode. (paper)
Impurity-induced tuning of quantum-well States in spin-dependent resonant tunneling.
Kalitsov, Alan; Coho, A; Kioussis, Nicholas; Vedyayev, Anatoly; Chshiev, M; Granovsky, A
2004-07-23
We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization, and the local current can be dramatically enhanced or suppressed by impurities. The underlying mechanism is the impurity-induced shift of the quantum well states (QWSs), which depends on the impurity potential, impurity position, and the symmetry of the QWS. Copyright 2004 The American Physical Society
'Al' concentration on spin-dependent resonant tunnelling in InAs/Ga
Indian Academy of Sciences (India)
The separation between spin-up and spin-down components, barrier transparency, polarization efficiency and tunnelling lifetime were calculated using the transfer matrix approach. The separation between spin-up and spin-down resonances and tunnelling lifetime were reportedfor the first time in the case of InAs/Ga 1 − y ...
Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers
International Nuclear Information System (INIS)
Tang, N.Y.
2009-01-01
The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.
concentration on spin-dependent resonant tunnelling in InAs/Ga1 ...
Indian Academy of Sciences (India)
Cent percentage polarization can be obtained in this strained non-magnetic double-barrier ... Keywords. Spin–orbit interaction; barrier transparency; polarization efficiency; tunnelling lifetime. 1. Introduction ..... Figure 6. Tunnelling lifetime vs.
Spin-dependent tunneling transport in a lateral magnetic diode
International Nuclear Information System (INIS)
Wang, Yu; Shi, Ying
2012-01-01
Based on the gate-tunable two-dimensional electron gas, we have constructed laterally a double-barrier resonant tunneling structure by employing a peculiar triple-gate configuration, namely a ferromagnetic gate sandwiched closely by a pair of Schottky gates. Because of the in-plane stray field of ferromagnetic gate, the resulting bound spin state in well gives rise to the remarkable resonant spin polarization following the spin-dependent resonant tunneling regime. Importantly, by aligning the bound spin state through surface gate-voltage configuration, this resonant spin polarization can be externally manipulated, showing the desirable features for the spin-logic device applications. -- Highlights: ► A lateral spin-RTD was proposed by applying triple-gate modulated 2DEG. ► Spin-dependent resonant tunneling transport and large resonant spin polarization has been clarified from the systematic simulation. ► Both electric and/or magnetic strategies can be employed to modulate the system spin transport, providing the essential features for the spin-logic application.
Spin-dependent tunnelling in magnetic tunnel junctions
International Nuclear Information System (INIS)
Tsymbal, Evgeny Y; Mryasov, Oleg N; LeClair, Patrick R
2003-01-01
The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunnelling (SDT) in magnetic tunnel junctions (MTJs) has recently aroused enormous interest and has developed in a vigorous field of research. The large tunnelling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible applications in non-volatile random-access memories and next-generation magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. In this review article we present an overview of this field of research. We discuss various factors that control the spin polarization and magnetoresistance in MTJs. Starting from early experiments on SDT and their interpretation, we consider thereafter recent experiments and models which highlight the role of the electronic structure of the ferromagnets, the insulating layer, and the ferromagnet/insulator interfaces. We also discuss the role of disorder in the barrier and in the ferromagnetic electrodes and their influence on TMR. (topical review)
Theory of spin-dependent tunnelling in magnetic junctions
International Nuclear Information System (INIS)
Mathon, J.
2002-01-01
Rigorous theory of the tunnelling magnetoresistance (TMR) based on the real-space Kubo formula and fully realistic tight-binding bands fitted to an ab initio band structure is described. It is first applied to calculate the TMR of two Co electrodes separated by a vacuum gap. The calculated TMR ratio reaches ∼65% in the tunnelling regime but can be as high as 280% in the metallic regime when the vacuum gap is of the order of the Co interatomic distance (abrupt domain wall). It is also shown that the spin polarization P of the tunnelling current is negative in the metallic regime but becomes positive P∼35% in the tunnelling regime. Calculation of the TMR of an epitaxial Fe/MgO/Fe(001) junction is also described. The calculated optimistic TMR ratio is in excess of 1000% for an MgO barrier of ∼20 atomic planes and the spin polarization of the tunnelling current is positive for all MgO thicknesses. It is also found that spin-dependent tunnelling in an Fe/MgO/Fe(001) junction is not entirely determined by states at the Γ point (k parallel = 0) even for MgO thicknesses as large as ∼20 atomic planes. Finally, it is demonstrated that the TMR ratio calculated from the Kubo formula remains non-zero when one of the Co electrodes is covered with a copper layer. It is shown that non-zero TMR is due to quantum well states in the Cu layer which do not participate in transport. Since these only occur in the down-spin channel, their loss from transport creates a spin asymmetry of electrons tunnelling from a Cu interlayer, i.e. non-zero TMR. Numerical modelling is used to show that diffuse scattering from a random distribution of impurities in the barrier may cause quantum well states to evolve into propagating states, in which case the spin asymmetry of the non-magnetic layer is lost and with it the TMR. (author)
International Nuclear Information System (INIS)
Granovsky, A.B.; Inoue, Mitsuteru
2004-01-01
We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling
Energy Technology Data Exchange (ETDEWEB)
Granovsky, A.B. E-mail: granov@magn.ru; Inoue, Mitsuteru
2004-05-01
We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling.
Shape Biased Low Power Spin Dependent Tunneling Magnetic Field Sensors
Tondra, Mark; Qian, Zhenghong; Wang, Dexin; Nordman, Cathy; Anderson, John
2001-10-01
Spin Dependent Tunneling (SDT) devices are leading candidates for inclusion in a number of Unattended Ground Sensor applications. Continued progress at NVE has pushed their performance to 1OOs of pT I rt. Hz 1 Hz. However, these sensors were designed to use an applied field from an on-chip coil to create an appropriate magnetic sensing configuration. The power required to generate this field (^100mW) is significantly greater than the power budget (^lmW) for a magnetic sensor in an Unattended Ground Sensor (UGS) application. Consequently, a new approach to creating an ideal sensing environment is required. One approach being used at NVE is "shape biasing." This means that the physical layout of the SDT sensing elements is such that the magnetization of the sensing film is correct even when no biasing field is applied. Sensors have been fabricated using this technique and show reasonable promise for UGS applications. Some performance trade-offs exist. The power is easily tinder 1 MW, but the sensitivity is typically lower by a factor of 10. This talk will discuss some of the design details of these sensors as well as their expected ultimate performance.
Spin-dependent tunneling recombination in heterostructures with a magnetic layer
Energy Technology Data Exchange (ETDEWEB)
Denisov, K. S., E-mail: denisokonstantin@gmail.com; Rozhansky, I. V.; Averkiev, N. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lähderanta, E. [Lappeenranta University of Technology (Finland)
2017-01-15
We propose a mechanism for the generation of spin polarization in semiconductor heterostructures with a quantum well and a magnetic impurity layer spatially separated from it. The spin polarization of carriers in a quantum well originates from spin-dependent tunneling recombination at impurity states in the magnetic layer, which is accompanied by a fast linear increase in the degree of circular polarization of photoluminescence from the quantum well. Two situations are theoretically considered. In the first case, resonant tunneling to the spin-split sublevels of the impurity center occurs and spin polarization is caused by different populations of resonance levels in the quantum well for opposite spin projections. In the second, nonresonant case, the spin-split impurity level lies above the occupied states of electrons in the quantum well and plays the role of an intermediate state in the two-stage coherent spin-dependent recombination of an electron from the quantum well and a hole in the impurity layer. The developed theory allows us to explain both qualitatively and quantitatively the kinetics of photoexcited electrons in experiments with photoluminescence with time resolution in Mn-doped InGaAs heterostructures.
Spin-dependent transport in metal/semiconductor tunnel junctions
Prins, M.W.J.; Kempen, van H.; Leuken, Van H.; Groot, de R.A.; Roy, van W.; De Boeck, J.
1995-01-01
This paper describes a model as well as experiments on spin-polarized tunnelling with the aid of optical spin orientation. This involves tunnel junctions between a magnetic material and gallium arsenide (GaAs), where the latter is optically excited with circularly polarized light in order to
Chandrasekar, L. Bruno; Gnanasekar, K.; Karunakaran, M.
2018-06-01
The effect of δ-potential was studied in GaAs/Ga0.6Al0·4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the δ- potential in the well region was analysed on spin-dependent electron tunneling using transfer matrix method. The spin-separation between spin-resonances on energy scale depends on both height and position of the δ- potential, whereas the tunneling life time of electrons highly influenced by the position of the δ- potential and not on the height. These results might be helpful for the fabrication of spin-filters.
Micromagnetic Design of Spin Dependent Tunnel Junctions for Optimized Sensing Performance
National Research Council Canada - National Science Library
Tondra, Mark; Daughton, James M; Nordman, Catherine; Wang, Dexin; Taylor, John
1999-01-01
Pinned Spin Dependent Tunneling (SDT) devices have been fabricated into high sensitivity magnetic field sensors with many favorable properties including high sensitivity (̃ 10 umOe / Hz @ 1 Hz and ̃ 100 nOe / Hz @ > 10 kHz...
Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.
Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G
2013-08-27
Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.
Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, Gukhyung
2013-01-01
Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermio...
Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts.
Song, Yipu; Schmitt, Andrew L; Jin, Song
2008-08-01
Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.
Yan, Jiawei; Wang, Shizhuo; Xia, Ke; Ke, Youqi
2018-01-01
We present first-principles analysis of interfacial disorder effects on spin-dependent tunneling statistics in thin Fe/MgO/Fe magnetic tunnel junctions. We find that interfacial disorder scattering can significantly modulate the tunneling statistics in the minority spin of the parallel configuration (PC) while all other spin channels remain dominated by the Poissonian process. For the minority-spin channel of PC, interfacial disorder scattering favors the formation of resonant tunneling channels by lifting the limitation of symmetry conservation at low concentration, presenting an important sub-Poissonian process in PC, but is destructive to the open channels at high concentration. We find that the important modulation of tunneling statistics is independent of the type of interfacial disorder. A bimodal distribution function of transmission with disorder dependence is introduced and fits very well our first-principles results. The increase of MgO thickness can quickly change the tunneling from a sub-Poissonian to Poissonian dominated process in the minority spin of PC with disorder. Our results provide a sensitive detection method of an ultralow concentration of interfacial defects.
Controlling spin-dependent tunneling by bandgap tuning in epitaxial rocksalt MgZnO films.
Li, D L; Ma, Q L; Wang, S G; Ward, R C C; Hesjedal, T; Zhang, X-G; Kohn, A; Amsellem, E; Yang, G; Liu, J L; Jiang, J; Wei, H X; Han, X F
2014-12-02
Widespread application of magnetic tunnel junctions (MTJs) for information storage has so far been limited by the complicated interplay between tunnel magnetoresistance (TMR) ratio and the product of resistance and junction area (RA). An intricate connection exists between TMR ratio, RA value and the bandgap and crystal structure of the barrier, a connection that must be unravelled to optimise device performance and enable further applications to be developed. Here, we demonstrate a novel method to tailor the bandgap of an ultrathin, epitaxial Zn-doped MgO tunnel barrier with rocksalt structure. This structure is attractive due to its good Δ1 spin filtering effect, and we show that MTJs based on tunable MgZnO barriers allow effective balancing of TMR ratio and RA value. In this way spin-dependent transport properties can be controlled, a key challenge for the development of spintronic devices.
Energy Technology Data Exchange (ETDEWEB)
Granovsky, Alexander [Faculty of Physics, Lomonosov Moscow State University, Moscow 119992 (Russian Federation)]. E-mail: granov@magn.ru; Kozlov, Andrey [Faculty of Physics, Lomonosov Moscow State University, Moscow 119992 (Russian Federation); Nedukh, Sergey [Institute of Radiophysics and Electronics NAS of Ukraine, Kharkov 61085 (Ukraine); Tarapov, Sergey [Institute of Radiophysics and Electronics NAS of Ukraine, Kharkov 61085 (Ukraine)
2005-07-15
Since the dielectric permittivity is linear with frequency-dependent conductivity, high-frequency properties for any kind of magnetic materials with the high magnetoresistance depend on magnetization. It manifests as magnetorefractive effect (MRE) in the infrared region of spectrum and as magnetoimpedance (MI) in the frequency range between radio and microwaves. The main mechanism of both MRE and MI in nanocomposites with tunnel-type magnetoresistance is high-frequency spin-dependent tunnelling. We report on recent results of theoretical and experimental investigations of MRE and MI in nanocomposites Co{sub 51.5}Al{sub 19.5}O{sub 29}, Co{sub 50.2}Ti{sub 9.1}O{sub 40.7}, Co{sub 52.3}Si{sub 12.2}O{sub 35.5} and (Co{sub 0,4}Fe{sub 0,6}){sub 48}(MgF){sub 52}. Most of the obtained experimental data for MRE and MI are consistent with the theory based on considering the tunnel junction between adjacent granules in percolation cluster as a capacitor.
International Nuclear Information System (INIS)
Zhang, Hu; Dai, Jian-Qing; Song, Yu-Min
2016-01-01
We investigate the magnetoelectric coupling and spin-polarized tunneling in Ni/KNbO_3/Ni multiferroic tunnel junctions with asymmetric interfaces based on density functional theory. The junctions have two stable polarization states. We predict a peculiar magnetoelectric effect in such junctions originating from the magnetic reconstruction of Ni near the KO-terminated interface. This reconstruction is induced by the reversal of the ferroelectric polarization of KNbO_3. Furthermore, the change in the magnetic ordering filters the spin-dependent current. This effect leads to a change in conductance by about two orders of magnitude. As a result we obtain a giant tunneling electroresistance effect. In addition, there exist sizable tunneling magnetoresistance effects for two polarization states. - Highlights: • We study the ME coupling and electron tunneling in Ni/KNbO_3/Ni junctions. • There is magnetic reconstruction of Ni atoms near the KO-terminated interface. • A peculiar magnetoelectric coupling effect is obtained. • Predicted giant tunneling electroresistance effects.
Radiation tolerance of a spin-dependent tunnelling magnetometer for space applications
International Nuclear Information System (INIS)
Persson, Anders; Thornell, Greger; Nguyen, Hugo
2011-01-01
To meet the increasing demand for miniaturized space instruments, efforts have been made to miniaturize traditional magnetometers, e.g. fluxgate and spin-exchange relaxation-free magnetometers. These have, for different reasons, turned out to be difficult. New technologies are needed, and promising in this respect are tunnelling magnetoresistive (TMR) magnetometers, which are based on thin film technology. However, all new space devices first have to be qualified, particularly in terms of radiation resistance. A study on TMR magnetometers' vulnerability to radiation is crucial, considering the fact that they employ a dielectric barrier, which can be susceptible to charge trapping from ionizing radiation. Here, a TMR-based magnetometer, called the spin-dependent tunnelling magnetometer (SDTM), is presented. A magnetometer chip consisting of three Wheatstone bridges, with an angular pitch of 120°, was fabricated using microstructure technology. Each branch of the Wheatstone bridges consists of eight pairs of magnetic tunnel junctions (MTJs) connected in series. Two such chips are used to measure the three-dimensional magnetic field vector. To investigate the SDTM's resistance to radiation, one branch of a Wheatstone bridge was irradiated with gamma rays from a Co 60 source with a dose rate of 10.9 rad min −1 to a total dose of 100 krad. The TMR of the branch was monitored in situ, and the easy axis TMR loop and low-frequency noise characteristics of a single MTJ were acquired before and after irradiation with the total dose. It was concluded that radiation did not influence the MTJs in any noticeable way in terms of the TMR ratio, coercivity, magnetostatic coupling or low-frequency noise
Resonant tunnel magnetoresistance in a double magnetic tunnel junction
Useinov, Arthur
2011-08-09
We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.
Resonant tunnel magnetoresistance in a double magnetic tunnel junction
Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen
2011-01-01
We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can
Spin-dependent tunneling conductance in 2D structures in zero magnetic field
International Nuclear Information System (INIS)
Rozhansky, I.V.; Averkiev, N.S.
2009-01-01
The influence of the spin-orbit interaction on the tunneling between two-dimensional electron layers is considered. A general expression for the tunneling current is obtained with the Rashba and Dresselhaus effects and also elastic scattering of charge carriers on impurities taken into account. It is shown that the particular form of the tunneling conductance as a function of the voltage between layers is extremely sensitive to the relationship between the Rashba and Dresselhaus parameters. This makes it possible to determine the parameters of the spin-orbit interaction and the quantum scattering time directly from measurements of the tunneling conductance in the absence of magnetic field
Spin-dependent quasiparticle tunneling in junction superconductor-isolator-ferromagnetic
International Nuclear Information System (INIS)
Shlapak, Yu.V.; Shaternik, V.E.; Rudenko, E.M.
2001-01-01
The influence of Andreev reflection of quasiparticles in transparent tunnel junctions of superconductor-isolator-ferromagnetic on electric-current transport is studied within the framework of the Blonder-Tinkham-Klapwijk (BTK) model. It's obtained that current and signal-to-noise ratio can be increased for the memory cell by using in it the double-barrier tunnel junction ferromagnetic-isolator-superconductor-isolator-ferromagnetic instead off the usual tunnel junction ferromagnetic-isolator-ferromagnetic. The evolution of non-linear (tunnel-type) current-voltage characteristics with increasing of the junction transparency is described. (orig.)
Inducing spin-dependent tunneling to probe magnetic correlations in optical lattices
DEFF Research Database (Denmark)
Pedersen, Kim-Georg; Andersen, Brian; Syljuåsen, Olav
2012-01-01
We suggest a simple experimental method for probing antiferromagnetic spin correlations of two-component Fermi gases in optical lattices. The method relies on a spin selective Raman transition to excite atoms of one spin species to their first excited vibrational mode where the tunneling is large....... The resulting difference in the tunneling dynamics of the two spin species can then be exploited, to reveal the spin correlations by measuring the number of doubly occupied lattice sites at a later time. We perform quantum Monte Carlo simulations of the spin system and solve the optical lattice dynamics...
Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions
Useinov, A. N.
2011-08-24
We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.
Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions
Useinov, A. N.; Kosel, Jü rgen; Useinov, N. Kh.; Tagirov, L. R.
2011-01-01
We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.
International Nuclear Information System (INIS)
Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min
2015-01-01
We report on first-principles calculations of a Ni monolayer inserted at one interface in the epitaxial Fe/PbTiO 3 /Fe multiferroic heterostructure, focusing on the magnetoelectric coupling and the spin-dependent transport properties. The results of magnetoelectric coupling calculations reveal an attractive approach to realize cumulative magnetoelectric effects in the ferromagnetic/ferroelectric/ferromagnetic superlattices. The underlying physics is attributed to the combinations of several different magnetoelectric coupling mechanisms such as interface bonding, spin-dependent screening, and different types of magnetic interactions. We also demonstrate that inserting a Ni monolayer at one interface in the Fe/PbTiO 3 /Fe multiferroic tunnel junction is an efficient method to produce considerable tunneling electroresistance effect by modifying the tunnel potential barrier and the interfacial electronic structure. Furthermore, coexistence of tunneling magnetoresistance and tunneling electroresistance leads to the emergence of four distinct resistance states, which can be served as a multistate-storage device. The complicated influencing factors including bulk properties of the ferromagnetic electrodes, decay rates of the evanescent states in the tunnel barrier, and the specific interfacial electronic structure provide us promising opportunities to design novel multiferroic tunnel junctions with excellent performances
Energy Technology Data Exchange (ETDEWEB)
Dai, Jian-Qing, E-mail: djqkust@sina.com; Zhang, Hu; Song, Yu-Min [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)
2015-08-07
We report on first-principles calculations of a Ni monolayer inserted at one interface in the epitaxial Fe/PbTiO{sub 3}/Fe multiferroic heterostructure, focusing on the magnetoelectric coupling and the spin-dependent transport properties. The results of magnetoelectric coupling calculations reveal an attractive approach to realize cumulative magnetoelectric effects in the ferromagnetic/ferroelectric/ferromagnetic superlattices. The underlying physics is attributed to the combinations of several different magnetoelectric coupling mechanisms such as interface bonding, spin-dependent screening, and different types of magnetic interactions. We also demonstrate that inserting a Ni monolayer at one interface in the Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction is an efficient method to produce considerable tunneling electroresistance effect by modifying the tunnel potential barrier and the interfacial electronic structure. Furthermore, coexistence of tunneling magnetoresistance and tunneling electroresistance leads to the emergence of four distinct resistance states, which can be served as a multistate-storage device. The complicated influencing factors including bulk properties of the ferromagnetic electrodes, decay rates of the evanescent states in the tunnel barrier, and the specific interfacial electronic structure provide us promising opportunities to design novel multiferroic tunnel junctions with excellent performances.
Physics of optimal resonant tunneling
Racec, P.N.; Stoica, T.; Popescu, C.; Lepsa, M.I.; Roer, van de T.G.
1997-01-01
The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier resonant-tunneling (DBRT) structure, is discussed. It is shown that its physics does not rest on the departure from the constant potential within the barriers and well, due to the applied electric
Ting, David Z.
2007-01-01
The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.
Transit time for resonant tunneling
International Nuclear Information System (INIS)
Garcia Calderon, G.; Rubio, A.
1990-09-01
This work considers properties of the partial widths in one dimensional elastic resonant tunneling in order to propose a transit-time τ tr = (h/2π)/Γ n T res ) where Γ n is the elastic width and T res the transmission coefficient at resonance energy. This time is interpreted as an average over the resonance energy width. It is shown that the tunneling current density integrated across a sharp resonance is inversely proportional to τ tr . This transit time may be much larger than the values predicted by other definitions. (author). 20 refs
Yin, Li; Wang, Xiaocha; Mi, Wenbo
2018-01-01
Perpendicular magnetic tunnel junctions (MTJs) have attracted increasing attention owing to the low energy consumption and wide application prospects. Herewith, against Julliere's formula, an inverse tunnel magnetoresistance (TMR) appears in tetragonal Fe4N/BiFeO3/Fe4N perpendicular MTJs, which is attributed to the binding between the interface resonant tunneling state and central (bordered) hot spots. Especially, antiferromagnetic BiFeO3 shows an extra spin-polarized resonant state in the barrier, which provides a magnetic-barrier factor to affect the tunneling transport in MTJs. Meanwhile, due to the spin-polarized transport in Fe4N/BiFeO3/Fe4N MTJs, the sign of TMR can be tuned by the applied bias. The tunable TMR and resonant magnetic barrier effect pave the way for clarifying the tunneling transport in other junctions and spintronic devices.
Thermal stability study of the insulator layer in NiFe/CoFe/Al2O3/Co spin-dependent tunnel junction
International Nuclear Information System (INIS)
Liao, C.C.; Ho, C.H.; Huang, R.-T.; Chen, F.-R.; Kai, J.J.; Chen, L.-C.; Lin, M.-T.; Yao, Y.D.
2002-01-01
Spin-dependent tunnel junction, NiFe/CoFe/Al 2 O 3 /Co//Si, was fabricated to investigate the thermal stability induced diffusion behaviors. The interfacial diffusion causes the degradation of the ratio of the TMR, the enhancement of the switching field of the two magnetic electrodes, the thickness decrease of the insulator layer, and the increase of the interfacial roughness. The outward diffusion of oxygen from the insulator layer is faster than that of aluminum for samples annealed below 400 deg. C. The degradation of the ratio of TMR is attributed to the disturbance of the spin polarization in the magnetic layers, and the increase of the pinholes and spin-flip effect in the insulator layer. The relative roughness between the two interfaces of the insulator induces the surface magnetic dipoles, and hence, increases the switching field of the ferromagnetic electrodes
Inelastic scattering in resonant tunneling
DEFF Research Database (Denmark)
Wingreen, Ned S.; Jacobsen, Karsten Wedel; Wilkins, John W.
1989-01-01
The exact resonant-tunneling transmission probability for an electron interacting with phonons is presented in the limit that the elastic coupling to the leads is independent of energy. The phonons produce transmission sidebands but do not affect the integrated transmission probability or the esc......The exact resonant-tunneling transmission probability for an electron interacting with phonons is presented in the limit that the elastic coupling to the leads is independent of energy. The phonons produce transmission sidebands but do not affect the integrated transmission probability...
Scanning Tunneling Optical Resonance Microscopy
Bailey, Sheila; Wilt, Dave; Raffaelle, Ryne; Gennett, Tom; Tin, Padetha; Lau, Janice; Castro, Stephanie; Jenkins, Philip; Scheiman, Dave
2003-01-01
Scanning tunneling optical resonance microscopy (STORM) is a method, now undergoing development, for measuring optoelectronic properties of materials and devices on the nanoscale by means of a combination of (1) traditional scanning tunneling microscopy (STM) with (2) tunable laser spectroscopy. In STORM, an STM tip probing a semiconductor is illuminated with modulated light at a wavelength in the visible-to-near-infrared range and the resulting photoenhancement of the tunneling current is measured as a function of the illuminating wavelength. The photoenhancement of tunneling current occurs when the laser photon energy is sufficient to excite charge carriers into the conduction band of the semiconductor. Figure 1 schematically depicts a proposed STORM apparatus. The light for illuminating the semiconductor specimen at the STM would be generated by a ring laser that would be tunable across the wavelength range of interest. The laser beam would be chopped by an achromatic liquid-crystal modulator. A polarization-maintaining optical fiber would couple the light to the tip/sample junction of a commercial STM. An STM can be operated in one of two modes: constant height or constant current. A STORM apparatus would be operated in the constant-current mode, in which the height of the tip relative to the specimen would be varied in order to keep the tunneling current constant. In this mode, a feedback control circuit adjusts the voltage applied to a piezoelectric actuator in the STM that adjusts the height of the STM tip to keep the tunneling current constant. The exponential relationship between the tunneling current and tip-to-sample distance makes it relatively easy to implement this mode of operation. The choice of method by which the photoenhanced portion of the tunneling current would be measured depends on choice of the frequency at which the input illumination would be modulated (chopped). If the frequency of modulation were low enough (typically tunneling current
Resonant tunneling of electrons in quantum wires
International Nuclear Information System (INIS)
Krive, I.V.; Shekhter, R.I.; Jonson, M.; Krive, I.V.
2010-01-01
We considered resonant electron tunneling in various nanostructures including single wall carbon nanotubes, molecular transistors and quantum wires formed in two-dimensional electron gas. The review starts with a textbook description of resonant tunneling of noninteracting electrons through a double-barrier structure. The effects of electron-electron interaction in sequential and resonant electron tunneling are studied by using Luttinger liquid model of electron transport in quantum wires. The experimental aspects of the problem (fabrication of quantum wires and transport measurements) are also considered. The influence of vibrational and electromechanical effects on resonant electron tunneling in molecular transistors is discussed.
The effect of asymmetry on resonant tunneling
International Nuclear Information System (INIS)
Garcia-Calderon, G.
1986-07-01
Resonant tunneling experiments on multibarrier coupled heterostructures probe the quasistationary nature of the states of the corresponding one dimensional potential. This work considers the effect of asymmetric one dimensional multibarrier potentials on resonant tunneling. It is shown, by using the properties of the propagator of the system, that this effect may lead to novel resonance phenomena and affects the lifetime of the quasistationary states of the system. The above considerations are illustrated by a simple analytical solvable model. (author)
Vodopyanov, B P
2010-05-12
The influence of the spin-dependent phase shifts (SDPSs) associated with the electronic reflection and transmission amplitudes acquired by electrons upon scattering at the potential barrier on the Andreev reflection probability of electron and hole excitations for a ferromagnet/isolator/d-wave superconductor (FIS) contact and on the charge conductance of the FIS contact is studied. Various superconductor orientations are considered. It has been found that for strong ferromagnets and ultrathin interface potential for the {110} oriented d-wave superconductor the presence of the SDPS can lead to the appearance of finite-voltage peaks in the charge conductance of the F/I/d-wave superconductor contact. On the contrary, for the {100} orientation of the d-wave superconductor the presence of the SDPS can lead to restoration of the zero-voltage peak and suppression of finite-voltage peaks. The spin-dependent amplitudes of the Andreev reflection probability and energy levels of the spin-dependent Andreev bound states are found.
Semiclassical description of resonant tunneling
International Nuclear Information System (INIS)
Bogomolny, E.B.; Rouben, D.C.
1996-01-01
A semiclassical formula is calculated for the tunneling current of electrons trapped in a potential well which can tunnel into and across a wide quantum well. The tunneling current is measured at the second interface of this well and the calculations idealized an experimental situation where a strong magnetic field tilted with respect to an electric field was used. It is shown that the contribution to the tunneling current, due to trajectories which begin at the first interface and end on the second, is dominant for periodic orbits which hit both walls of the quantum well. (author)
Quantum resonances in physical tunneling
International Nuclear Information System (INIS)
Nieto, M.M.; Truax, D.R.
1985-01-01
It has recently been emphasized that the probability of quantum tunneling is a critical function of the shape of the potential. Applying this observation to physical systems, we point out that in principal information on potential surfaces can be obtained by studying tunneling rates. This is especially true in cases where only spectral data is known, since many potentials yield the same spectrum. 13 refs., 10 figs., 1 tab
Resonant tunneling in a pulsed phonon field
DEFF Research Database (Denmark)
Kral, P.; Jauho, Antti-Pekka
1999-01-01
, The nonequilibrium spectral function for the resonance displays the formation and decay of the phonon sidebands on ultrashort time scales. The time-dependent tunneling current through the individual phonon satellites reflects this quasiparticle formation by oscillations, whose time scale is set by the frequency...
Resonant tunneling via spin-polarized barrier states in a magnetic tunnel junction
Jansen, R.; Lodder, J.C.
2000-01-01
Resonant tunneling through states in the barrier of a magnetic tunnel junction has been analyzed theoretically for the case of a spin-polarized density of barrier states. It is shown that for highly spin-polarized barrier states, the magnetoresistance due to resonant tunneling is enhanced compared
Resonant tunneling across a ferroelectric domain wall
Li, M.; Tao, L. L.; Velev, J. P.; Tsymbal, E. Y.
2018-04-01
Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with L a0.5S r0.5Mn O3 electrodes separated by a BaTi O3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTi O3 can be induced by polar interfaces. The resulting V -shaped electrostatic potential profile across the BaTi O3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum- and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.
Resonant tunneling through double-barrier structures on graphene
International Nuclear Information System (INIS)
Deng Wei-Yin; Zhu Rui; Deng Wen-Ji; Xiao Yun-Chang
2014-01-01
Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tight-binding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schrödinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between the zigzag- and armchair-edge barriers is given. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Simulations of Resonant Intraband and Interband Tunneling Spin Filters
Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.
2001-01-01
This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).
Influence of soliton distributions on the spin-dependent electronic ...
Indian Academy of Sciences (India)
Based on Su–Schrieffer–Heeger (SSH) Hamiltonian and using a generalized Green's function formalism, wecalculate the spin-dependent currents, the electronic transmission and tunnelling magnetoresistance (TMR). We found that the presence of a uniform distribution of the soliton centres along the molecular chain ...
Resonant Tunneling Analog-To-Digital Converter
Broekaert, T. P. E.; Seabaugh, A. C.; Hellums, J.; Taddiken, A.; Tang, H.; Teng, J.; vanderWagt, J. P. A.
1995-01-01
As sampling rates continue to increase, current analog-to-digital converter (ADC) device technologies will soon reach a practical resolution limit. This limit will most profoundly effect satellite and military systems used, for example, for electronic countermeasures, electronic and signal intelligence, and phased array radar. New device and circuit concepts will be essential for continued progress. We describe a novel, folded architecture ADC which could enable a technological discontinuity in ADC performance. The converter technology is based on the integration of multiple resonant tunneling diodes (RTD) and hetero-junction transistors on an indium phosphide substrate. The RTD consists of a layered semiconductor hetero-structure AlAs/InGaAs/AlAs(2/4/2 nm) clad on either side by heavily doped InGaAs contact layers. Compact quantizers based around the RTD offer a reduction in the number of components and a reduction in the input capacitance Because the component count and capacitance scale with the number of bits N, rather than by 2 (exp n) as in the flash ADC, speed can be significantly increased, A 4-bit 2-GSps quantizer circuit is under development to evaluate the performance potential. Circuit designs for ADC conversion with a resolution of 6-bits at 25GSps may be enabled by the resonant tunneling approach.
Theory of electrically controlled resonant tunneling spin devices
Ting, David Z. -Y.; Cartoixa, Xavier
2004-01-01
We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.
Quantum tunneling resonant electron transfer process in Lorentzian plasmas
International Nuclear Information System (INIS)
Hong, Woo-Pyo; Jung, Young-Dae
2014-01-01
The quantum tunneling resonant electron transfer process between a positive ion and a neutral atom collision is investigated in nonthermal generalized Lorentzian plasmas. The result shows that the nonthermal effect enhances the resonant electron transfer cross section in Lorentzian plasmas. It is found that the nonthermal effect on the classical resonant electron transfer cross section is more significant than that on the quantum tunneling resonant charge transfer cross section. It is shown that the nonthermal effect on the resonant electron transfer cross section decreases with an increase of the Debye length. In addition, the nonthermal effect on the quantum tunneling resonant electron transfer cross section decreases with increasing collision energy. The variation of nonthermal and plasma shielding effects on the quantum tunneling resonant electron transfer process is also discussed
The theory of coherent resonance tunneling of interacting electrons
International Nuclear Information System (INIS)
Elesin, V. F.
2001-01-01
Analytical solutions of the Schrödinger equation for a two-barrier structure (resonance-tunnel diode) with open boundary conditions are found within the model of coherent tunneling of interacting electrons. Simple expressions for resonance current are derived which enable one to analyze the current-voltage characteristics, the conditions of emergence of hysteresis, and singularities of the latter depending on the parameters of resonance-tunnel diode. It is demonstrated that the hysteresis is realized if the current exceeds some critical value proportional to the square of resonance level width.
Spin dependent photon structure functions
International Nuclear Information System (INIS)
Manohar, A.V.; Massachusetts Inst. of Tech., Cambridge
1989-01-01
Spin dependent structure functions of the photon are studied using the operator product expansion. There are new twist-two photon and gluon operators which contribute. The structure functions g 1 and F 3 are calculable in QCD, but differ from their free quark values. The corrections to F 3 are suppressed by 1/log Q 2 . The calculation is an extension of the analysis of Witten for the spin averaged structure functions F 1 and F 2 . (orig.)
Electron spin resonance scanning tunneling microscope
International Nuclear Information System (INIS)
Guo Yang; Li Jianmei; Lu Xinghua
2015-01-01
It is highly expected that the future informatics will be based on the spins of individual electrons. The development of elementary information unit will eventually leads to novel single-molecule or single-atom devices based on electron spins; the quantum computer in the future can be constructed with single electron spins as the basic quantum bits. However, it is still a great challenge in detection and manipulation of a single electron spin, as well as its coherence and entanglement. As an ideal experimental tool for such tasks, the development of electron spin resonance scanning tunneling microscope (ESR-STM) has attracted great attention for decades. This paper briefly introduces the basic concept of ESR-STM. The development history of this instrument and recent progresses are reviewed. The underlying mechanism is explored and summarized. The challenges and possible solutions are discussed. Finally, the prospect of future direction and applications are presented. (authors)
The combined resonance tunneling and semi-resonance level in low energy D-D reaction
International Nuclear Information System (INIS)
Li Xingzhong; Jin Dezhe; Chang Lee
1993-01-01
When nuclear potential wells are connected by an atomic potential well, a new kind of tunneling may happen even if there is no virtual energy level in nuclear potential wells. The necessary condition for this combined resonance tunneling is the resonance in the atomic potential well. Thus, the nuclear reaction may be affected by the action in atomic scale in terms of combined resonance tunneling. The nuclear spectrum data support this idea. (author)
Study of the geometrical resonances of superconducting tunnel junctions
DEFF Research Database (Denmark)
Sørensen, O. Hoffmann; Finnegan, T.F.; Pedersen, Niels Falsig
1973-01-01
The resonant cavity structure of superconducting Sn-Sn-oxide-Sn tunnel junctions has been investigated via photon-assisted quasiparticle tunneling. We find that the temperature-dependent losses at 35 GHz are determined by the surface resistance of the Sn films for reduced temperatures between 0...
Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M
2012-11-01
Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.
DEFF Research Database (Denmark)
Li, H.W.; Kardynal, Beata; Ellis, D.J.P.
2008-01-01
Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality res...
Spin injection in n-type resonant tunneling diodes.
Orsi Gordo, Vanessa; Herval, Leonilson Ks; Galeti, Helder Va; Gobato, Yara Galvão; Brasil, Maria Jsp; Marques, Gilmar E; Henini, Mohamed; Airey, Robert J
2012-10-25
We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.
Tunneling and resonant conductance in one-dimensional molecular structures
International Nuclear Information System (INIS)
Kozhushner, M.A.; Posvyanskii, V.S.; Oleynik, I.I.
2005-01-01
We present a theory of tunneling and resonant transitions in one-dimensional molecular systems which is based on Green's function theory of electron sub-barrier scattering off the structural units (or functional groups) of a molecular chain. We show that the many-electron effects are of paramount importance in electron transport and they are effectively treated using a formalism of sub-barrier scattering operators. The method which calculates the total scattering amplitude of the bridge molecule not only predicts the enhancement of the amplitude of tunneling transitions in course of tunneling electron transfer through onedimensional molecular structures but also allows us to interpret conductance mechanisms by calculating the bound energy spectrum of the tunneling electron, the energies being obtained as poles of the total scattering amplitude of the bridge molecule. We found that the resonant tunneling via bound states of the tunneling electron is the major mechanism of electron conductivity in relatively long organic molecules. The sub-barrier scattering technique naturally includes a description of tunneling in applied electric fields which allows us to calculate I-V curves at finite bias. The developed theory is applied to explain experimental findings such as bridge effect due to tunneling through organic molecules, and threshold versus Ohmic behavior of the conductance due to resonant electron transfer
Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode
Saffarzadeh, Alireza; Daqiq, Reza
2009-01-01
We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to t...
Wood, R. M.; Saha, D.; McCarthy, L. A.; Tokarski, J. T.; Sanders, G. D.; Kuhns, P. L.; McGill, S. A.; Reyes, A. P.; Reno, J. L.; Stanton, C. J.; Bowers, C. R.
2014-10-01
A combined experimental-theoretical study of optically pumped nuclear magnetic resonance (OPNMR) has been performed in a GaAs /A l0.1G a0.9As quantum well film epoxy bonded to a Si substrate with thermally induced biaxial strain. The photon energy dependence of the Ga OPNMR signal was recorded at magnetic fields of 4.9 and 9.4 T at a temperature of 4.8-5.4 K. The data were compared to the nuclear spin polarization calculated from the electronic structure and differential absorption to spin-up and spin-down states of the electron conduction band using a modified k .p model based on the Pidgeon-Brown model. Comparison of theory with experiment facilitated the assignment of features in the OPNMR energy dependence to specific interband Landau level transitions. The results provide insight into how effects of strain and quantum confinement are manifested in optical nuclear polarization in semiconductors.
Memory Applications Using Resonant Tunneling Diodes
Shieh, Ming-Huei
Resonant tunneling diodes (RTDs) producing unique folding current-voltage (I-V) characteristics have attracted considerable research attention due to their promising application in signal processing and multi-valued logic. The negative differential resistance of RTDs renders the operating points self-latching and stable. We have proposed a multiple -dimensional multiple-state RTD-based static random-access memory (SRAM) cell in which the number of stable states can significantly be increased to (N + 1)^ m or more for m number of N-peak RTDs connected in series. The proposed cells take advantage of the hysteresis and folding I-V characteristics of RTD. Several cell designs are presented and evaluated. A two-dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs. The hysteresis phenomenon in a series of RTDs is also further analyzed. The switch model provided in SPICE 3 can be utilized to simulate the hysteretic I-V characteristics of RTDs. A simple macro-circuit is described to model the hysteretic I-V characteristic of RTD for circuit simulation. A new scheme for storing word-wide multiple-bit information very efficiently in a single memory cell using RTDs is proposed. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-bit memory cell scheme using one-peak RTDs are also presented. Finally, a binary transistor-less memory cell which is only composed of a pair of RTDs and an ordinary rectifier diode is presented and investigated. A simple means for reading and writing information from or into the memory cell is also discussed.
Mantsevich, V. N.; Maslova, N. S.
2009-01-01
We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conduct...
Reflection effect of localized absorptive potential on non-resonant and resonant tunneling
International Nuclear Information System (INIS)
Rubio, A.; Kumar, N.
1992-06-01
The reflection due to absorptive potential (-iV i ) for resonant and non-resonant tunneling has been considered. We show that the effect of reflection leads to a non-monotonic dependence of absorption on the strength V i with a maximum absorption of typically 0.5. This has implications for the operation of resonant tunneling devices. General conceptual aspects of absorptive potentials are discussed. (author). 9 refs, 2 figs
New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes
Directory of Open Access Journals (Sweden)
Jimy Encomendero
2017-10-01
Full Text Available For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride double barrier heterostructures has remained elusive at room temperature. In this work we theoretically and experimentally study III-nitride double-barrier resonant tunneling diodes (RTDs, the quantum transport characteristics of which exhibit new features that are unexplainable using existing semiconductor theory. The repeatable and robust resonant transport in our devices enables us to track the origin of these features to the broken inversion symmetry in the uniaxial crystal structure, which generates built-in spontaneous and piezoelectric polarization fields. Resonant tunneling transport enabled by the ground state as well as by the first excited state is demonstrated for the first time over a wide temperature window in planar III-nitride RTDs. An analytical transport model for polar resonant tunneling heterostructures is introduced for the first time, showing a good quantitative agreement with experimental data. From this model we realize that tunneling transport is an extremely sensitive measure of the built-in polarization fields. Since such electric fields play a crucial role in the design of electronic and photonic devices, but are difficult to measure, our work provides a completely new method to accurately determine their magnitude for the entire class of polar heterostructures.
Resonant Tunneling in Gated Vertical One- dimensional Structures
Kolagunta, V. R.; Janes, D. B.; Melloch, M. R.; Webb, K. J.
1997-03-01
Vertical sub-micron transistors incorporating resonant tunneling multiple quantum well heterostructures are interesting in applications for both multi-valued logic devices and the study of quantization effects in vertical quasi- one-, zero- dimensional structures. Earlier we have demonstrated room temperature pinch-off of the resonant peak in sub-micron vertical resonant tunneling transistors structures using a self-aligned sidewall gating technique ( V.R. Kolagunta et. al., Applied Physics Lett., 69), 374(1996). In this paper we present the study of gating effects in vertical multiple quantum well resonant tunneling transistors. Multiple well quasi-1-D sidewall gated transistors with mesa dimensions of L_x=0.5-0.9μm and L_y=10-40μm were fabricated. The quantum heterostructure in these devices consists of two non-symmetric (180 ÅÅi-GaAs wells separated from each other and from the top and bottom n^+ GaAs/contacts region using Al_0.3Ga_0.7As tunneling barriers. Room temperature pinch-off of the multiple resonant peaks similar to that reported in the case of single well devices is observed in these devices^1. Current-voltage characteristics at liquid nitrogen temperatures show splitting of the resonant peaks into sub-bands with increasing negative gate bias indicative of quasi- 1-D confinement. Room-temperature and low-temperature current-voltage measurements shall be presented and discussed.
Theoretical consideration of spin-polarized resonant tunneling in magnetic tunnel junctions
International Nuclear Information System (INIS)
Mu Haifeng; Zhu Zhengang; Zheng Qingrong; Jin Biao; Wang Zhengchuan; Su Gang
2004-01-01
A recent elegant experimental realization [S. Yuasa et al., Science 297 (2002) 234] of the spin-polarized resonant tunneling in magnetic tunnel junctions is interpreted in terms of a two-band model. It is shown that the tunnel magnetoresistance (TMR) decays oscillatorily with the thickness of the normal metal (NM) layer, being fairly in agreement with the experimental observation. The tunnel conductance is found to decay with slight oscillations with the increase of the NM layer thickness, which is also well consistent with the experiment. In addition, when the magnetizations of both ferromagnet electrodes are not collinearly aligned, TMR is found to exhibit sharp resonant peaks at some particular thickness of the NM layer. The peaked TMR obeys nicely a Gaussian distribution against the relative orientation of the magnetizations
Resonant tunnelling and negative differential conductance in graphene transistors
Britnell, L.; Gorbachev, R. V.; Geim, A. K.; Ponomarenko, L. A.; Mishchenko, A.; Greenaway, M. T.; Fromhold, T. M.; Novoselov, K. S.; Eaves, L.
2013-04-01
The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.
Spin-dependent transport through interacting graphene armchair nanoribbons
International Nuclear Information System (INIS)
Koller, Sonja; Mayrhofer, Leonhard; Grifoni, Milena
2010-01-01
We investigate spin effects in transport across fully interacting, finite-size graphene armchair nanoribbons (ACNs) contacted to collinearly spin-polarized leads. In such systems, the presence of short-range Coulomb interaction between bulk states and states localized at the ribbon ends leads to novel spin-dependent phenomena. Specifically, the total spin of the low-energy many-body states is conserved during tunneling but that of the bulk and end states is not. As a consequence, in the single-electron regime, dominated by Coulomb blockade phenomena, we find pronounced negative differential conductance features for ACNs contacted to parallel polarized leads. These features are, however, absent in an anti-parallel contact configuration, which in turn leads, within a certain gate and bias voltage region, to a negative tunneling magneto-resistance. Moreover, we analyze the changes in the transport characteristics under the influence of an external magnetic field.
Influence of edge roughness on graphene nanoribbon resonant tunnelling diodes
International Nuclear Information System (INIS)
Liang Gengchiau; Khalid, Sharjeel Bin; Lam, Kai-Tak
2010-01-01
The edge roughness effects of graphene nanoribbons on their application in resonant tunnelling diodes with different geometrical shapes (S, H and W) were investigated. Sixty samples for each 5%, 10% and 15% edge roughness conditions of these differently shaped graphene nanoribbon resonant tunnelling diodes were randomly generated and studied. Firstly, it was observed that edge roughness in the barrier regions decreases the effective barrier height and thickness, which increases the broadening of the quantized states in the quantum well due to the enhanced penetration of the wave-function tail from the electrodes. Secondly, edge roughness increases the effective width of the quantum well and causes the lowering of the quantized states. Furthermore, the shape effects on carrier transport are modified by edge roughness due to different interfacial scattering. Finally, with the effects mentioned above, edge roughness has a considerable impact on the device performance in terms of varying the peak-current positions and degrading the peak-to-valley current ratio.
Optically controlled resonant tunneling in a double-barrier diode
Kan, S. C.; Wu, S.; Sanders, S.; Griffel, G.; Yariv, A.
1991-03-01
The resonant tunneling effect is optically enhanced in a GaAs/GaAlAs double-barrier structure that has partial lateral current confinement. The peak current increases and the valley current decreases simultaneously when the device surface is illuminated, due to the increased conductivity of the top layer of the structure. The effect of the lateral current confinement on the current-voltage characteristic of a double-barrier resonant tunneling structure was also studied. With increased lateral current confinement, the peak and valley current decrease at a different rate such that the current peak-to-valley ratio increases up to three times. The experimental results are explained by solving the electrostatic potential distribution in the structure using a simple three-layer model.
Self-consistent modelling of resonant tunnelling structures
DEFF Research Database (Denmark)
Fiig, T.; Jauho, A.P.
1992-01-01
We report a comprehensive study of the effects of self-consistency on the I-V-characteristics of resonant tunnelling structures. The calculational method is based on a simultaneous solution of the effective-mass Schrödinger equation and the Poisson equation, and the current is evaluated...... applied voltages and carrier densities at the emitter-barrier interface. We include the two-dimensional accumulation layer charge and the quantum well charge in our self-consistent scheme. We discuss the evaluation of the current contribution originating from the two-dimensional accumulation layer charges......, and our qualitative estimates seem consistent with recent experimental studies. The intrinsic bistability of resonant tunnelling diodes is analyzed within several different approximation schemes....
Inelastic tunneling spectroscopy for magnetic atoms and the Kondo resonance
International Nuclear Information System (INIS)
Goldberg, E C; Flores, F
2013-01-01
The interaction between a single magnetic atom and the metal environment (including a magnetic field) is analyzed by introducing an ionic Hamiltonian combined with an effective crystal-field term, and by using a Green-function equation of motion method. This approach describes the inelastic electron tunneling spectroscopy and the Kondo resonances as due to atomic spin fluctuations associated with electron co-tunneling processes between the leads and the atom. We analyze in the case of Fe on CuN the possible spin fluctuations between states with S = 2 and 3/2 or 5/2 and conclude that the experimentally found asymmetries in the conductance with respect to the applied bias, and its marked structures, are well explained by the 2↔3/2 spin fluctuations. The case of Co is also considered and shown to present, in contrast with Fe, a resonance at the Fermi energy corresponding to a Kondo temperature of 6 K. (paper)
Tunneling effect in cavity-resonator-coupled arrays
International Nuclear Information System (INIS)
Ma Hua; Xu Zhuo; Qu Shao-Bo; Zhang Jie-Qiu; Wang Jia-Fu; Liang Chang-Hong
2013-01-01
The quantum tunneling effect (QTE) in a cavity-resonator-coupled (CRC) array was analytically and numerically investigated. The underlying mechanism was interpreted by treating electromagnetic waves as photons, and then was generalized to acoustic waves and matter waves. It is indicated that for the three kinds of waves, the QTE can be excited by cavity resonance in a CRC array, resulting in sub-wavelength transparency through the narrow splits between cavities. This opens up opportunities for designing new types of crystals based on CRC arrays, which may find potential applications such as quantum devices, micro-optic transmission, and acoustic manipulation. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Energy Technology Data Exchange (ETDEWEB)
Nanda, Jyotirmayee [Department of Physics, National Institute of Technology, Rourkela, 769008 (India)]. E-mail: jnanda_b9@rediffmail.com; Mahapatra, P.K. [Department of Physics and Technophysics, Vidyasagar University, Midnapore, 721102 (India)]. E-mail: pkmahapatra@vidyasagar.ac.in; Roy, C.L. [Department of Physics and Meterology, Indian Institute of Technology, Kharagpur, 721302 (India)
2006-09-01
A computational model based on non-relativistic approach is proposed for the determination of transmission coefficient, resonant tunneling energies, group velocity, resonant tunneling lifetime and traversal time in multibarrier systems (GaAs/Al {sub y} Ga{sub 1-} {sub y} As) for the entire energy range {epsilon}
Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths
International Nuclear Information System (INIS)
Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Höfling, Sven; Kamp, Martin; Worschech, Lukas
2014-01-01
An AlGaAs/GaAs double barrier resonant tunneling diode (RTD) with a nearby lattice-matched GaInNAs absorption layer was integrated into an optical cavity consisting of five and seven GaAs/AlAs layers to demonstrate cavity enhanced photodetection at the telecommunication wavelength 1.3 μm. The samples were grown by molecular beam epitaxy and RTD-mesas with ring-shaped contacts were fabricated. Electrical and optical properties were investigated at room temperature. The detector shows maximum photocurrent for the optical resonance at a wavelength of 1.29 μm. At resonance a high sensitivity of 3.1×10 4 A/W and a response up to several pA per photon at room temperature were found
Circular polarization in a non-magnetic resonant tunneling device
Directory of Open Access Journals (Sweden)
Airey Robert
2011-01-01
Full Text Available Abstract We have investigated the polarization-resolved photoluminescence (PL in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW PL presents strong circular polarization (values up to -70% at 19 T. The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.
Q factor and resonance amplitude of Josephson tunnel junctions
International Nuclear Information System (INIS)
Broom, R.F.; Wolf, P.
1977-01-01
The surface impedance of the superconducting films comprising the electrodes of Josephson tunnel junctions has been derived from the BCS theory in the extreme London limit. Expressions have been obtained for (i) the dependence of the penetration depth lambda on frequency and temperature, and (ii) the quality factor Q of the junction cavity, attributable to surface absorption in the electrodes. The effect of thin electrodes (t 9 or approx. = lambda) is also included in the calculations. Comparison of the calculated frequency dependence of lambda with resonance measurements on Pb-alloy and all-Nb tunnel junctions yields quite good agreement, indicating that the assumptions made in the theory are reasonable. Measurements of the (current) amplitude of the resonance peaks of the junctions have been compared with the values obtained from inclusion of the calculated Q in the theory by Kulik. In common with observations on microwave cavities by other workers, we find that a small residual conductivity must be added to the real part of the BCS value. With its inclusion, good agreement is found between calculation and experiment, within the range determined by the simplifying assumptions of Kulik's theory. From the results, we believe the calculation of Q to be reasonably accurate for the materials investigated. It is shown that the resonance amplitude of Josephson junctions can be calculated directly from the material constants and a knowledge of the residual conductivity
Modelling of optoelectronic circuits based on resonant tunneling diodes
Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.
2017-08-01
Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.
Spin-dependent optics with metasurfaces
Directory of Open Access Journals (Sweden)
Xiao Shiyi
2016-11-01
Full Text Available Optical spin-Hall effect (OSHE is a spin-dependent transportation phenomenon of light as an analogy to its counterpart in condensed matter physics. Although being predicted and observed for decades, this effect has recently attracted enormous interests due to the development of metamaterials and metasurfaces, which can provide us tailor-made control of the light-matter interaction and spin-orbit interaction. In parallel to the developments of OSHE, metasurface gives us opportunities to manipulate OSHE in achieving a stronger response, a higher efficiency, a higher resolution, or more degrees of freedom in controlling the wave front. Here, we give an overview of the OSHE based on metasurface-enabled geometric phases in different kinds of configurational spaces and their applications on spin-dependent beam steering, focusing, holograms, structured light generation, and detection. These developments mark the beginning of a new era of spin-enabled optics for future optical components.
International Nuclear Information System (INIS)
Rouben, D.C.
1997-01-01
A semiclassical method for resonant tunneling in a quantum well in the presence of a magnetic field tilted with regard to an electric field is developed. In particular a semiclassical formula is derived for the total current of electrons after the second barrier of the quantum well. The contribution of the stable and unstable orbits is studied. It appears that the parameters which describe the classical chaos in the quantum well have an important effect on the tunneling current. A numerical experiment is led, the contributions to the current of some particular orbits are evaluated and the results are compared with those given by the quantum theory. (A.C.)
Spin-dependent electrical transport in Fe-MgO-Fe heterostructures
Directory of Open Access Journals (Sweden)
A A Shokri
2016-09-01
Full Text Available In this paper, spin-dependent electrical transport properties are investigated in a single-crystal magnetic tunnel junction (MTJ which consists of two ferromagnetic Fe electrodes separated by an MgO insulating barrier. These properties contain electric current, spin polarization and tunnel magnetoresistance (TMR. For this purpose, spin-dependent Hamiltonian is described for Δ1 and Δ5 bands in the transport direction. The transmission is calculated by Green's function formalism based on a single-band tight-binding approximation. The transport properties are investigated as a function of the barrier thickness in the limit of coherent tunneling. We have demonstrated that dependence of the TMR on the applied voltage and barrier thickness. Our numerical results may be useful for designing of spintronic devices. The numerical results may be useful in designing of spintronic devices.
Resonant tunnelling through short-range singular potentials
International Nuclear Information System (INIS)
Zolotaryuk, A V; Christiansen, P L; Iermakova, S V
2007-01-01
A three-parameter family of point interactions constructed from sequences of symmetric barrier-well-barrier and well-barrier-well rectangles is studied in the limit, when the rectangles are squeezed to zero width but the barrier height and the well depth become infinite (the zero-range limit). The limiting generalized potentials are referred to as the second derivative of Dirac's delta function ±λδ-prime(x) with a renormalized coupling constant λ > 0 or simply as ±δ-prime-like point interactions. As a result, a whole family of self-adjoint extensions of the one-dimensional Schroedinger operator is shown to exist, which results in full and partial resonant tunnelling through this class of singular potentials. The resonant tunnelling occurs for countable sets of interaction strength values in the λ-space which are the roots of several transcendental equations. The comparison with the previous results for δ'-like point interactions is also discussed
Photo-Detectors Integrated with Resonant Tunneling Diodes
Directory of Open Access Journals (Sweden)
José M. L. Figueiredo
2013-07-01
Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.
Spin-dependent Nucleon Structure Studies at MIT/Bates
International Nuclear Information System (INIS)
Botto, T.
2005-01-01
We present preliminary results from recent measurements of the proton, neutron and deuterium electro-magnetic form factors obtained by the BLAST collaboration at the MIT/Bates Linear Accelerator Facility. BLAST (Bates Large Acceptance Spectrometer Toroid) is a large-acceptance multi-purpose detector dedicated to studies of exclusive spin-dependent electron scattering from internal polarized targets. BLAST makes use of stored electron beam currents in excess of 150 mA with a 60-70% polarization. The electron beam is let through a 15 mm diameter, 60 cm long open-ended storage cell which is fed with ultra-pure, high-polarization H1,D1 gas from an Atomic Beam Source. The target polarization can be rapidly reversed between different vector and tensor target states, thus minimizing systematic uncertainties. The target spin can be oriented to any in-plane direction via a set of Helmholtz coils. Target polarizations in the storage cell of up to 80% (vector) and 70% (tensor) have been routinely achieved over a period of several months. Our data on the D-vector(e-vector,e'n) reaction off vector polarized deuterium allow for a unique extraction of the neutron charge form factor G E n . At same time, complementary measurements of G M n , T20 and the spin-dependent nucleon momentum distributions in deuterium are obtained via the D-vector(e-vector,e'), D (e-vector,e'd) and D (e-vector,e'p) reactions. In addition, BLAST data on vector polarized hydrogen will provide novel measurements of the GE/GM form-factor ratio on the proton as well as of the spin-dependent electro-excitation of the Δ(1232) resonance. Such comprehensive program on few body physics is now well underway and preliminary data will be presented
Resonant tunneling measurements of size-induced strain relaxation
Akyuz, Can Deniz
Lattice mismatch strain available in such semiconductor heterostructures as Si/SiGe or GaAs/AlGaAs can be employed to alter the electronic and optoelectronic properties of semiconductor structures and devices. When deep submicron structures are fabricated from strained material, strained layers relax by sidewall expansion giving rise to size- and geometry-dependent strain gradients throughout the structure. This thesis describes a novel experimental technique to probe the size-induced strain relaxation by studying the tunneling current characteristics of strained p-type Si/SiGe resonant tunneling diodes. Our current-voltage measurements on submicron strained p-Si/SiGe double- and triple-barrier resonant tunneling structures as a function of device diameter, D, provide experimental access to both the average strain relaxation (which leads to relative shifts in the tunneling current peak positions) and strain gradients (which give rise to a fine structure in the current peaks due to inhomogeneous strain-induced lateral quantization). We find that strain relaxation is significant, with a large fraction of the strain energy relaxed on average in D ≤ 0.25 m m devices. Further, the in-plane potentials that arise from inhomogeneous strain gradients are large. In the D ˜ 0.2 m m devices, the corresponding lateral potentials are approximately parabolic exceeding ˜ 25 meV near the perimeter. These potentials create discrete hole states in double-barrier structures (single well), and coupled hole states in triple-barrier structures (two wells). Our results are in excellent agreement with finite-element strain calculations in which the strained layers are permitted to relax to a state of minimum energy by sidewall expansion. Size-induced strain relaxation will undoubtedly become a serious technological issue once strained devices are scaled down to the deep submicron regime. Interestingly, our calculations predict and our measurements are consistent with the appearance of
The spin dependent odderon in the diquark model
Energy Technology Data Exchange (ETDEWEB)
Szymanowski, Lech [National Centre for Nuclear Research (NCBJ), Warsaw (Poland); Zhou, Jian, E-mail: jzhou@sdu.edu.cn [School of Physics, & Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University, Jinan, Shandong 250100 (China); Nikhef and Department of Physics and Astronomy, VU University Amsterdam, De Boelelaan 1081, NL-1081 HV Amsterdam (Netherlands)
2016-09-10
In this short note, we report a di-quark model calculation for the spin dependent odderon and demonstrate that the asymmetrical color source distribution in the transverse plane of a transversely polarized hadron plays an essential role in yielding the spin dependent odderon. This calculation confirms the earlier finding that the spin dependent odderon is closely related to the parton orbital angular momentum.
Spin-dependent potentials from lattice QCD
International Nuclear Information System (INIS)
Koma, Y.
2006-09-01
The spin-dependent corrections to the static inter-quark potential are phenomenologically relevant to describing the fine and hyperfine spin splitting of the heavy quarkonium spectra. We investigate these corrections, which are represented as the field strength correlators on the quark-antiquark source, in SU(3) lattice gauge theory. We use the Polyakov loop correlation function as the quark-antiquark source, and by employing the multi-level algorithm, we obtain remarkably clean signals for these corrections up to intermediate distances of around 0.6 fm. Our observation suggests several new features of the corrections. (orig.)
Resonant tunnelling from nanometre-scale silicon field emission cathodes
International Nuclear Information System (INIS)
Johnson, S.; Markwitz, A.
2005-01-01
In this paper we report the field emission properties of self-assembled silicon nanostructures formed on an n-type silicon (100) substrate by electron beam annealing. The nanostructures are square based, with an average height of 8 nm and are distributed randomly over the entire substrate surface. Following conditioning, the silicon nanostructure field emission characteristics become stable and reproducible with electron emission occurring for fields as low as 3 Vμm-1. At higher fields, a superimposed on a background current well described by conventional Fowler-Nordheim theory. These current peaks are understood to result from enhanced tunnelling through resonant states formed at the substrate-nanostructure and nanostructure-vacuum interface. (author). 13 refs., 3 figs
Baskin, Lev; Plamenevskii, Boris; Sarafanov, Oleg
2015-01-01
This volume studies electron resonant tunneling in two- and three-dimensional quantum waveguides of variable cross-sections in the time-independent approach. Mathematical models are suggested for the resonant tunneling and develop asymptotic and numerical approaches for investigating the models. Also, schemes are presented for several electronics devices based on the phenomenon of resonant tunneling. Devices based on the phenomenon of electron resonant tunneling are widely used in electronics. Efforts are directed towards refining properties of resonance structures. There are prospects for building new nanosize electronics elements based on quantum dot systems. However, the role of resonance structure can also be given to a quantum wire of variable cross-section. Instead of an "electrode - quantum dot - electrode" system, one can use a quantum wire with two narrows. A waveguide narrow is an effective potential barrier for longitudinal electron motion along a waveguide. The part of the waveguide between ...
Time-dependent resonant tunnelling for parallel-coupled double quantum dots
International Nuclear Information System (INIS)
Dong Bing; Djuric, Ivana; Cui, H L; Lei, X L
2004-01-01
We derive the quantum rate equations for an Aharonov-Bohm interferometer with two vertically coupled quantum dots embedded in each of two arms by means of the nonequilibrium Green function in the sequential tunnelling regime. Based on these equations, we investigate time-dependent resonant tunnelling under a small amplitude irradiation and find that the resonant photon-assisted tunnelling peaks in photocurrent demonstrate a combination behaviour of Fano and Lorentzian resonances due to the interference effect between the two pathways in this parallel configuration, which is controllable by threading the magnetic flux inside this device
Quantum Entanglement of a Tunneling Spin with Mechanical Modes of a Torsional Resonator
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D. A. Garanin
2011-08-01
Full Text Available We solve the Schrödinger equation for various quantum regimes describing a tunneling macrospin coupled to a torsional oscillator. The energy spectrum and freezing of spin tunneling are studied. Magnetic susceptibility, noise spectrum, and decoherence due to entanglement of spin and mechanical modes are computed. We show that the presence of a tunneling spin can be detected via splitting of the mechanical mode at the resonance. Our results apply to experiments with magnetic molecules coupled to nanoresonators.
Resonance tunneling electron-vibrational spectroscopy of polyoxometalates.
Dalidchik, F I; Kovalevskii, S A; Balashov, E M
2017-05-21
The tunneling spectra of the ordered monolayer films of decamolybdodicobaltate (DMDC) compounds deposited from aqueous solutions on HOPG were measured by scanning tunnel microscopy in air. The DMDC spectra, as well as the tunneling spectra of other polyoxometalates (POMs), exhibit well-defined negative differential resistances (NDRs). The mechanism of formation of these spectral features was established from the collection of revealed NDR dependences on the external varying parameters and found to be common to all systems exhibiting Wannier-Stark localization. A model of biresonance tunneling was developed to provide an explanation for the totality of experimental data, both the literature and original, on the tunneling POM probing. A variant of the tunneling electron-vibrational POM spectroscopy was proposed allowing the determination of the three basic energy parameters-energy gaps between the occupied and unoccupied states, frequencies of the vibrational transitions accompanying biresonance electron-tunneling processes, and electron-vibrational interaction constants on the monomolecular level.
Resonant Magnetization Tunneling in Molecular Magnets: Where is the Inhomogeneous Broadening?
Friedman, Jonathan R.; Sarachik, M. P.
1998-03-01
Since the discovery(J. R. Friedman, et al., Phys. Rev. Lett. 76), 3830 (1996) of resonant magnetization tunneling in the molecular magnet Mn_12 there has been intense research into the underlying mechanism of tunneling. Most current theories( V. Dobrovitski and A. Zvezdin, Europhys. Lett. 38), 377 (1997); L. Gunther, Europhys. Lett. 39, 1 (1997); D Garanin and E. Chudnovsky, Phys. Rev. B 56, 11102 (1997). suggest that a local internal (hyperfine or dipole) field transverse to the easy magnetization axis induces tunneling. These theories predict a resonance width orders of magnitude smaller than that actually observed. This discrepancy is attributed to inhomogeneous broadening of the resonance by the random internal fields. We present a detailed study of the tunnel resonance lineshape and show that it is Lorentzian, suggesting it has a deeper physical origin. Since the hyperfine fields are believed to be comparable to the observed width, it is surprising that there is no Gaussian broadening.
Gate-controlled quantum collimation in nanocolumn resonant tunnelling transistors
International Nuclear Information System (INIS)
Wensorra, J; Lepsa, M I; Trellenkamp, S; Moers, J; Lueth, H; Indlekofer, K M
2009-01-01
Nanoscaled resonant tunneling transistors (RTT) based on MBE-grown GaAs/AlAs double-barrier quantum well (DBQW) structures have been fabricated by a top-down approach using electron-beam lithographic definition of the vertical nanocolumns. In the preparation process, a reproducible mask alignment accuracy of below 10 nm has been achieved and the all-around metal gate at the level of the DBQW structure has been positioned at a distance of about 20 nm relative to the semiconductor nanocolumn. Due to the specific doping profile n ++ /i/n ++ along the transistor nanocolumn, a particular confining potential is established for devices with diameters smaller than 70 nm, which causes a collimation effect of the propagating electrons. Under these conditions, room temperature optimum performance of the nano-RTTs is achieved with peak-to-valley current ratios above 2 and a peak current swing factor of about 6 for gate voltages between -6 and +6 V. These values indicate that our nano-RTTs can be successfully used in low power fast nanoelectronic circuits.
Usefulness of magnetic resonance imaging in carpal tunnel syndrome
International Nuclear Information System (INIS)
Morita, Akimasa; Fujisawa, Kouzou; Tsujii, Masaya; Hirata, Hitoshi; Uchida, Atsumasa
2005-01-01
Electrodiagnostic studies are highly sensitive and specific for the diagnosis of carpal tunnel syndrome (CTS). However, conduction velocities do not correlate with symptom severity or treatment outcomes. Magnetic resonance imaging (MRI) revealed tenosynovial thickening within the carpal tunnel as the most constant finding in CTS; it is encountered in more than 95% of the patients. The purpose of the present study is to analyze the relationship between subjective symptoms and MRI findings, and to identify clinical evaluations that reflect subjective symptom severity. The subject group comprised 48 females with CTS. Patients were divided into 4 groups based on their symptom duration (A: lesser than 3 months, B: 4 to 6 months, C: 7 to 12 months, D: more than 13 months). All patients were preoperatively assessed for subjective symptom severity by using a Likert scale, sensory conduction velocity (SCV), and compound muscle action potential (CMAP). In addition, all patients underwent MRI examination for the evaluation of flexor tenosynovial thickening represented by palmar bowing of the flexor retinaculum (PBFR). Fourteen healthy females with comparable demographics served as the controls. Relationships were estimated using Spearman rank score or Mann-Whitney's U test. Regarding subjective symptoms, pain severity decreased significantly in the order A>B>C; it did not decrease significantly in D. Paresthesia did not show any significant difference among the groups. PBFR was significantly higher in all the groups as compared to the control, and similar to pain severity, it decreased significantly in the order A>B>C; it did not decrease significantly in D. Statistical analysis established a close correlation between pain severity and PBFR. However, pain severity did not show any correlation with either electrophysiology or functional status. In contrast to electrophysiology or objective functional status assessment, flexor tenosynovial thickening shows a close correlation
Numerical simulations of resonant tunneling with the presence of inelastic processes
International Nuclear Information System (INIS)
Jauho, A.P.
1990-01-01
We describe simulations of resonant tunneling through a time-modulated double barrier potential. The harmonic modulation frequency ω leads to emission and/or absorption of modulation quanta of energy ℎω in close analogy with emission and/or absorption of dispersionless bosons (optical phonons, photons, plasmons etc.). The transmission coefficient shows satellite peaks in addition to the main resonance. Momentum space snap-shots can be used to extract detailed information of the dynamics of the inelastic tunneling processes, such as opening and closing boson mediated resonant channels, their relative importance, and related time-scales. (orig.)
Li, Quanfeng; Lu, Qingyou
2011-05-01
We present an ultra-fast scanning tunneling microscope with atomic resolution at 26 kHz scan rate which surpasses the resonant frequency of the quartz tuning fork resonator used as the fast scan actuator. The main improvements employed in achieving this new record are (1) fully low voltage design (2) independent scan control and data acquisition, where the tuning fork (carrying a tip) is blindly driven to scan by a function generator with the scan voltage and tunneling current (I(T)) being measured as image data (this is unlike the traditional point-by-point move and measure method where data acquisition and scan control are switched many times).
Spin-dependent parton distributions in the nucleon
Energy Technology Data Exchange (ETDEWEB)
Cloet, I.C. [Special Research Centre for the Subatomic Structure of Matter and Department of Physics and Mathematical Physics, University of Adelaide, SA 5005 (Australia); Bentz, W. [Department of Physics, School of Science, Tokai University Hiratsuka-shi, Kanagawa 259-1292 (Japan); Thomas, A.W. [Jefferson Lab, 12000 Jefferson Avenue, Newport News, VA 23606 (United States)
2005-04-15
Spin-dependent quark light-cone momentum distributions are calculated for a nucleon in the nuclear medium. We utilize a modified NJL model where the nucleon is described as a composite quark-diquark state. Scalar and vector mean fields are incorporated in the nuclear medium and these fields couple to the confined quarks in the nucleon. The effect of these fields on the spin-dependent distributions and consequently the axial charges is investigated. Our results for the 'spin-dependent EMC effect' are also discussed.
Spin-dependent recombination involving oxygen-vacancy complexes in silicon
Franke, David P.; Hoehne, Felix; Vlasenko, Leonid S.; Itoh, Kohei M.; Brandt, Martin S.
2014-01-01
Spin-dependent relaxation and recombination processes in $\\gamma$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, t...
Spin dependent surface recombination in silicon p-n junctions: the effect of irradiation
Energy Technology Data Exchange (ETDEWEB)
Kaplan, D [Laboratoire Central de Recherches, 91 - Corbeville par Orsay (France); Pepper, M [Cambridge Univ. (UK). Cavendish Lab.
1980-06-01
The results are presented of an investigation of spin dependent recombination in (100) oriented, gate controlled Si diodes irradiated by 30 keV electrons. After irradiation, recombination at the Si-SiO/sub 2/ interface is increased, and saturation of the spin resonance increases the diode forward current by 5 parts in 10/sup 4/. The results cannot be described by a conventional Shockley-Read recombination model. An alternative picture is proposed involving recombination between trapped electrons and trapped holes.
Li, Si-Yu; Liu, Haiwen; Qiao, Jia-Bin; Jiang, Hua; He, Lin
2018-03-01
Negative differential conductance (NDC), characterized by the decreasing current with increasing voltage, has attracted continuous attention for its various novel applications. The NDC typically exists in a certain range of bias voltages for a selected system and controlling the regions of NDC in curves of current versus voltage (I -V ) is experimentally challenging. Here, we demonstrate a magnetic-field-controlled NDC in scanning tunneling spectroscopy of graphene npn junction resonators. The magnetic field not only can switch on and off the NDC, but also can continuously tune the regions of the NDC in the I -V curves. In the graphene npn junction resonators, magnetic fields generate sharp and pronounced Landau-level peaks with the help of the Klein tunneling of massless Dirac fermions. A tip of scanning tunneling microscope induces a relatively shift of the Landau levels in graphene beneath the tip. Tunneling between the misaligned Landau levels results in the magnetic-field-controlled NDC.
Spin-Dependent Transport through Chiral Molecules Studied by Spin-Dependent Electrochemistry
2016-01-01
Conspectus Molecular spintronics (spin + electronics), which aims to exploit both the spin degree of freedom and the electron charge in molecular devices, has recently received massive attention. Our recent experiments on molecular spintronics employ chiral molecules which have the unexpected property of acting as spin filters, by way of an effect we call “chiral-induced spin selectivity” (CISS). In this Account, we discuss new types of spin-dependent electrochemistry measurements and their use to probe the spin-dependent charge transport properties of nonmagnetic chiral conductive polymers and biomolecules, such as oligopeptides, L/D cysteine, cytochrome c, bacteriorhodopsin (bR), and oligopeptide-CdSe nanoparticles (NPs) hybrid structures. Spin-dependent electrochemical measurements were carried out by employing ferromagnetic electrodes modified with chiral molecules used as the working electrode. Redox probes were used either in solution or when directly attached to the ferromagnetic electrodes. During the electrochemical measurements, the ferromagnetic electrode was magnetized either with its magnetic moment pointing “UP” or “DOWN” using a permanent magnet (H = 0.5 T), placed underneath the chemically modified ferromagnetic electrodes. The spin polarization of the current was found to be in the range of 5–30%, even in the case of small chiral molecules. Chiral films of the l- and d-cysteine tethered with a redox-active dye, toludin blue O, show spin polarizarion that depends on the chirality. Because the nickel electrodes are susceptible to corrosion, we explored the effect of coating them with a thin gold overlayer. The effect of the gold layer on the spin polarization of the electrons ejected from the electrode was investigated. In addition, the role of the structure of the protein on the spin selective transport was also studied as a function of bias voltage and the effect of protein denaturation was revealed. In addition to
International Nuclear Information System (INIS)
Tian, Si-Cong; Tong, Cun-Zhu; Ning, Yong-Qiang; Qin, Li; Liu, Yun; Wan, Ren-Gang
2014-01-01
Optical spectroscopy, a powerful tool for probing and manipulating quantum dots (QDs), has been used to investigate the resonance fluorescence spectrum from linear triple quantum dot molecules controlled by tunneling, using atomic physics methods. Interesting features such as quenching and narrowing of the fluorescence are observed. In such molecules the tunneling between the quantum dots can also induce a dark state. The results are explained by the transition properties of the dressed states generated by the coupling of the laser and the tunneling. Unlike the atomic system, in such quantum dot molecules quantum coherence can be induced using tunneling, requiring no coupling lasers, which will allow tunneling controllable quantum dot molecules to be applied to quantum optics and photonics. (paper)
Resonant tunneling of spin-wave packets via quantized states in potential wells.
Hansen, Ulf-Hendrik; Gatzen, Marius; Demidov, Vladislav E; Demokritov, Sergej O
2007-09-21
We have studied the tunneling of spin-wave pulses through a system of two closely situated potential barriers. The barriers represent two areas of inhomogeneity of the static magnetic field, where the existence of spin waves is forbidden. We show that for certain values of the spin-wave frequency corresponding to the quantized spin-wave states existing in the well formed between the barriers, the tunneling has a resonant character. As a result, transmission of spin-wave packets through the double-barrier structure is much more efficient than the sequent tunneling through two single barriers.
Opacak, Nikola; Milanović, Vitomir; Radovanović, Jelena
2017-12-01
Tunneling times in complex potentials are investigated. Analytical expressions for dwell time, self-interference time and group delay are obtained for the case of complex double delta potentials. It is shown that we can always find a set of parameters of the potential so that the tunneling times achieve very large values and even approach infinity for the case of resonance. The phenomenon of infinite tunneling times occurs for only one particular positive value of the imaginary part of the potential, if all other parameters are given.
Payne, A.; Ambal, K.; Boehme, C.; Williams, C. C.
2015-05-01
A study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single-electron tunneling between two electrically isolated paramagnetic states. Single-spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured atomic force microscopy system noise. The results show that the approach could provide single-spin measurement of electrically isolated qubit states with atomic spatial resolution at room temperature.
High resolution imaging of tunnels by magnetic resonance neurography
Energy Technology Data Exchange (ETDEWEB)
Subhawong, Ty K.; Thawait, Shrey K.; Machado, Antonio J.; Carrino, John A.; Chhabra, Avneesh [Johns Hopkins Hospital, The Russell H. Morgan Department of Radiology and Radiological Science, Baltimore, MD (United States); Wang, Kenneth C. [Baltimore VA Medical Center, Department of Radiology, Baltimore, MD (United States); Williams, Eric H. [Dellon Institute for Peripheral Nerve Surgery, Towson, MD (United States); Hashemi, Shahreyar Shar [Johns Hopkins Hospital, Division of Plastic and Reconstructive Surgery, Baltimore, MD (United States)
2012-01-15
Peripheral nerves often traverse confined fibro-osseous and fibro-muscular tunnels in the extremities, where they are particularly vulnerable to entrapment and compressive neuropathy. This gives rise to various tunnel syndromes, characterized by distinct patterns of muscular weakness and sensory deficits. This article focuses on several upper and lower extremity tunnels, in which direct visualization of the normal and abnormal nerve in question is possible with high resolution 3T MR neurography (MRN). MRN can also serve as a useful adjunct to clinical and electrophysiologic exams by discriminating adhesive lesions (perineural scar) from compressive lesions (such as tumor, ganglion, hypertrophic callous, or anomalous muscles) responsible for symptoms, thereby guiding appropriate treatment. (orig.)
High resolution imaging of tunnels by magnetic resonance neurography
International Nuclear Information System (INIS)
Subhawong, Ty K.; Thawait, Shrey K.; Machado, Antonio J.; Carrino, John A.; Chhabra, Avneesh; Wang, Kenneth C.; Williams, Eric H.; Hashemi, Shahreyar Shar
2012-01-01
Peripheral nerves often traverse confined fibro-osseous and fibro-muscular tunnels in the extremities, where they are particularly vulnerable to entrapment and compressive neuropathy. This gives rise to various tunnel syndromes, characterized by distinct patterns of muscular weakness and sensory deficits. This article focuses on several upper and lower extremity tunnels, in which direct visualization of the normal and abnormal nerve in question is possible with high resolution 3T MR neurography (MRN). MRN can also serve as a useful adjunct to clinical and electrophysiologic exams by discriminating adhesive lesions (perineural scar) from compressive lesions (such as tumor, ganglion, hypertrophic callous, or anomalous muscles) responsible for symptoms, thereby guiding appropriate treatment. (orig.)
Moments of nucleon spin-dependent generalized parton distributions
International Nuclear Information System (INIS)
Schroers, W.; Brower, R.C.; Dreher, P.; Edwards, R.; Fleming, G.; Haegler, Ph.; Heller, U.M.; Lippert, Th.; Negele, J.W.; Pochinsky, A.V.; Renner, D.B.; Richards, D.; Schilling, K.
2004-01-01
We present a lattice measurement of the first two moments of the spin-dependent GPD H∼(x, ξ, t). From these we obtain the axial coupling constant and the second moment of the spin-dependent forward parton distribution. The measurements are done in full QCD using Wilson fermions. In addition, we also present results from a first exploratory study of full QCD using Asqtad sea and domain-wall valence fermions
On the spin-dependent sensitivity of XENON100
Energy Technology Data Exchange (ETDEWEB)
Garny, Mathias [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Ibarra, Alejandro; Pato, Miguel; Vogl, Stefan [Technische Univ. Muenchen, Garching (Germany). Physik-Department
2012-11-15
The latest XENON100 data severely constrains dark matter elastic scattering off nuclei, leading to impressive upper limits on the spin-independent cross-section. The main goal of this paper is to stress that the same data set has also an excellent spin-dependent sensitivity, which is of utmost importance in probing dark matter models. We show in particular that the constraints set by XENON100 on the spin-dependent neutron cross-section are by far the best at present, whereas the corresponding spin-dependent proton limits lag behind other direct detection results. The effect of nuclear uncertainties on the structure functions of xenon isotopes is analysed in detail and found to lessen the robustness of the constraints, especially for spin-dependent proton couplings. Notwith-standing, the spin-dependent neutron prospects for XENON1T and DARWIN are very encouraging. We apply our constraints to well-motivated dark matter models and demonstrate that in both mass-degenerate scenarios and the minimal supersymmetric standard model the spin-dependent neutron limits can actually override the spin-independent limits. This opens the possibility of probing additional unexplored regions of the dark matter parameter space with the next generation of ton-scale direct detection experiments.
On the spin-dependent sensitivity of XENON100
International Nuclear Information System (INIS)
Garny, Mathias; Ibarra, Alejandro; Pato, Miguel; Vogl, Stefan
2012-11-01
The latest XENON100 data severely constrains dark matter elastic scattering off nuclei, leading to impressive upper limits on the spin-independent cross-section. The main goal of this paper is to stress that the same data set has also an excellent spin-dependent sensitivity, which is of utmost importance in probing dark matter models. We show in particular that the constraints set by XENON100 on the spin-dependent neutron cross-section are by far the best at present, whereas the corresponding spin-dependent proton limits lag behind other direct detection results. The effect of nuclear uncertainties on the structure functions of xenon isotopes is analysed in detail and found to lessen the robustness of the constraints, especially for spin-dependent proton couplings. Notwith-standing, the spin-dependent neutron prospects for XENON1T and DARWIN are very encouraging. We apply our constraints to well-motivated dark matter models and demonstrate that in both mass-degenerate scenarios and the minimal supersymmetric standard model the spin-dependent neutron limits can actually override the spin-independent limits. This opens the possibility of probing additional unexplored regions of the dark matter parameter space with the next generation of ton-scale direct detection experiments.
Voltage-controlled spin selection in a magnetic resonant tunneling diode.
Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W
2003-06-20
We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.
Energy Technology Data Exchange (ETDEWEB)
Rouben, D C
1997-11-28
A semiclassical method for resonant tunneling in a quantum well in the presence of a magnetic field tilted with regard to an electric field is developed. In particular a semiclassical formula is derived for the total current of electrons after the second barrier of the quantum well. The contribution of the stable and unstable orbits is studied. It appears that the parameters which describe the classical chaos in the quantum well have an important effect on the tunneling current. A numerical experiment is led, the contributions to the current of some particular orbits are evaluated and the results are compared with those given by the quantum theory. (A.C.) 70 refs.
Controllable resonant tunnelling through single-point potentials: A point triode
International Nuclear Information System (INIS)
Zolotaryuk, A.V.; Zolotaryuk, Yaroslav
2015-01-01
A zero-thickness limit of three-layer heterostructures under two bias voltages applied externally, where one of which is supposed to be a gate parameter, is studied. As a result, an effect of controllable resonant tunnelling of electrons through single-point potentials is shown to exist. Therefore the limiting structure may be termed a “point triode” and considered in the theory of point interactions as a new object. The simple limiting analytical expressions adequately describe the resonant behaviour in the transistor with realistic parameter values and thus one can conclude that the zero-range limit of multi-layer structures may be used in fabricating nanodevices. The difference between the resonant tunnelling across single-point potentials and the Fabry–Pérot interference effect is also emphasized. - Highlights: • The zero-thickness limit of three-layer heterostructures is described in terms of point interactions. • The effect of resonant tunnelling through these single-point potentials is established. • The resonant tunnelling is shown to be controlled by a gate voltage
Impact of Disorder on Spin Dependent Transport Phenomena
Saidaoui, Hamed
2016-07-03
The impact of the spin degree of freedom on the transport properties of electrons traveling through magnetic materials has been known since the pioneer work of Mott [1]. Since then it has been demonstrated that the spin angular momentum plays a key role in the scattering process of electrons in magnetic multilayers. This role has been emphasized by the discovery of the Giant Magnetoresistance in 1988 by Fert and Grunberg [2, 3]. Among the numerous applications and effects that emerged in mesoscopic devices two mechanisms have attracted our attention during the course of this thesis: the spin transfer torque and the spin Hall effects. The former consists in the transfer of the spin angular momentum from itinerant carriers to local magnetic moments [4]. This mechanism results in the current-driven magnetization switching and excitations, which has potential application in terms of magnetic data storage and non-volatile memories. The latter, spin Hall effect, is considered as well to be one of the most fascinating mechanisms in condensed matter physics due to its ability of generating non-equilibrium spin currents without the need for any magnetic materials. In fact the spin Hall effect relies only on the presence of the spin-orbit interaction in order to create an imbalance between the majority and minority spins. The objective of this thesis is to investigate the impact of disorder on spin dependent transport phenomena. To do so, we identified three classes of systems on which such disorder may have a dramatic influence: (i) antiferromagnetic materials, (ii) impurity-driven spin-orbit coupled systems and (iii) two dimensional semiconducting electron gases with Rashba spin-orbit coupling. Antiferromagnetic materials - We showed that in antiferromagnetic spin-valves, spin transfer torque is highly sensitive to disorder, which prevents its experimental observation. To solve this issue, we proposed to use either a tunnel barrier as a spacer or a local spin torque using
Optical control of spin-dependent thermal transport in a quantum ring
Abdullah, Nzar Rauf
2018-05-01
We report on calculation of spin-dependent thermal transport through a quantum ring with the Rashba spin-orbit interaction. The quantum ring is connected to two electron reservoirs with different temperatures. Tuning the Rashba coupling constant, degenerate energy states are formed leading to a suppression of the heat and thermoelectric currents. In addition, the quantum ring is coupled to a photon cavity with a single photon mode and linearly polarized photon field. In a resonance regime, when the photon energy is approximately equal to the energy spacing between two lowest degenerate states of the ring, the polarized photon field can significantly control the heat and thermoelectric currents in the system. The roles of the number of photon initially in the cavity, and electron-photon coupling strength on spin-dependent heat and thermoelectric currents are presented.
Radio frequency scanning tunneling spectroscopy for single-molecule spin resonance.
Müllegger, Stefan; Tebi, Stefano; Das, Amal K; Schöfberger, Wolfgang; Faschinger, Felix; Koch, Reinhold
2014-09-26
We probe nuclear and electron spins in a single molecule even beyond the electromagnetic dipole selection rules, at readily accessible magnetic fields (few mT) and temperatures (5 K) by resonant radio-frequency current from a scanning tunneling microscope. We achieve subnanometer spatial resolution combined with single-spin sensitivity, representing a 10 orders of magnitude improvement compared to existing magnetic resonance techniques. We demonstrate the successful resonant spectroscopy of the complete manifold of nuclear and electronic magnetic transitions of up to ΔI(z)=±3 and ΔJ(z)=±12 of single quantum spins in a single molecule. Our method of resonant radio-frequency scanning tunneling spectroscopy offers, atom-by-atom, unprecedented analytical power and spin control with an impact on diverse fields of nanoscience and nanotechnology.
Energy Technology Data Exchange (ETDEWEB)
Jung, Hyun Jin; Lee, Sheen Woo; Jeong, Yu Mi; Choi, Hye Young; Kim, Hyung Sik [Dept. of Radiology, Gil Hospital, Gacheon University College of Medicine, Incheon (Korea, Republic of); Park, Hong Gi; Kwak, Ji Hoon [Dept. of Orthopedic Surgery, Gil Hospital, Gacheon University College of Medicine, Incheon (Korea, Republic of)
2012-02-15
The purpose of this study was to access the diverse conditions that lead to the clinical manifestations of tarsal tunnel syndrome and evaluate the usefulness of magnetic resonance imaging (MRI) in preoperative evaluation. Thirty-three patients who underwent ankle MRI and surgery under the impression of tarsal tunnel syndrome were retrospectively analyzed. The findings on ankle MRI were categorized into space occupying lesions within the tarsal tunnel, space occupying lesions of the tunnel wall, and non-space occupying lesions. Associated plantar muscle atrophy was also evaluated. Medical records were reviewed for correlation of nerve conduction velocity (NCV) and surgical findings. There were 21 space occupying lesions of the tarsal tunnel, and eight lesions of tarsal tunnel wall. There were three cases with accessory muscle, three with tarsal coalition, five with ganglion cysts, one neurogenic tumor, five flexor retinaculum hypertrophy, three varicose veins, and nine with tenosynovitis of the posterior tibialis, flexor digitorum longus, or flexor hallucis longus tendon. One patient was found to have a deltoid ligament sprain. Of the 32, eight patients experienced fatty atrophic change within any one of the foot muscles. NCV was positive in 79% of the MRI-positive lesions. MRI provides detailed information on ankle anatomy, which includes that of tarsal tunnel and beyond. Pathologic conditions that cause or mimic tarsal tunnel syndrome are well demonstrated. MRI can enhance surgical planning by indicating the extent of decompression required, and help with further patient management. Patients with tarsal tunnel syndrome can greatly benefit from preoperative MRI. However, it should be noted that not all cases with tarsal tunnel syndrome have MRI-demonstrable causes.
International Nuclear Information System (INIS)
Jung, Hyun Jin; Lee, Sheen Woo; Jeong, Yu Mi; Choi, Hye Young; Kim, Hyung Sik; Park, Hong Gi; Kwak, Ji Hoon
2012-01-01
The purpose of this study was to access the diverse conditions that lead to the clinical manifestations of tarsal tunnel syndrome and evaluate the usefulness of magnetic resonance imaging (MRI) in preoperative evaluation. Thirty-three patients who underwent ankle MRI and surgery under the impression of tarsal tunnel syndrome were retrospectively analyzed. The findings on ankle MRI were categorized into space occupying lesions within the tarsal tunnel, space occupying lesions of the tunnel wall, and non-space occupying lesions. Associated plantar muscle atrophy was also evaluated. Medical records were reviewed for correlation of nerve conduction velocity (NCV) and surgical findings. There were 21 space occupying lesions of the tarsal tunnel, and eight lesions of tarsal tunnel wall. There were three cases with accessory muscle, three with tarsal coalition, five with ganglion cysts, one neurogenic tumor, five flexor retinaculum hypertrophy, three varicose veins, and nine with tenosynovitis of the posterior tibialis, flexor digitorum longus, or flexor hallucis longus tendon. One patient was found to have a deltoid ligament sprain. Of the 32, eight patients experienced fatty atrophic change within any one of the foot muscles. NCV was positive in 79% of the MRI-positive lesions. MRI provides detailed information on ankle anatomy, which includes that of tarsal tunnel and beyond. Pathologic conditions that cause or mimic tarsal tunnel syndrome are well demonstrated. MRI can enhance surgical planning by indicating the extent of decompression required, and help with further patient management. Patients with tarsal tunnel syndrome can greatly benefit from preoperative MRI. However, it should be noted that not all cases with tarsal tunnel syndrome have MRI-demonstrable causes.
Evaluation of resonant tunneling transmission coefficient from multilayer structures GaAlAs/GaAs
Directory of Open Access Journals (Sweden)
L. Moghaddasi
2003-12-01
Full Text Available A theoretical study of resonant tunneling in multilayered GaAlAs/GaAs structures are presented. The spectrum of resonant energies and its dependence on the barrier structure are analyzed from calculated profiles of barrier transparency versus energy, and from current voltage characteristics computed at selected temperatures and Fermi levels. The present formalism is based on the effective mass approximation and results are via direct numerical evaluations.
Importance of complex band structure and resonant states for tunneling
Czech Academy of Sciences Publication Activity Database
Dederichs, P. H.; Mavropoulos, Ph.; Wunnicke, O.; Papanikolaou, N.; Bellini, V.; Zeller, R.; Drchal, Václav; Kudrnovský, Josef
2002-01-01
Roč. 240, - (2002), s. 108-113 ISSN 0304-8853 R&D Projects: GA AV ČR IAA1010829; GA ČR GA202/00/0122; GA MŠk OC P5.30 Grant - others:TSR(XX) 01398 Institutional research plan: CEZ:AV0Z1010914 Keywords : magnetoresistance * tunneling * band structure * interface effects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.046, year: 2002
Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions
Directory of Open Access Journals (Sweden)
Fen Liu
2016-08-01
Full Text Available Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsic properties.
Makeev, M. O.; Meshkov, S. A.
2017-07-01
The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.
Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser
Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.
1991-01-01
A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.
Resonant coherent quantum tunneling of the magnetization of spin-systems: Spin-parity effects
Garcia-Pablos, D; Garcia, N; de Raedt, H.A.
1997-01-01
We perform quantum dynamical calculations to study the reversal of the magnetization for systems of a few the presence of an external magnetic field at T=0 and with no dissipation. Collective quantum tunneling of the magnetization is demonstrated to occur only for some specific resonant values of
DEFF Research Database (Denmark)
Pedersen, Niels Falsig; Sørensen, O. H.; Mygind, Jesper
1978-01-01
The microwave response at 9 GHz of Sn-O-Sn tunnel-junction current biased at zero dc voltage has been measured just below the critical temperature Tc of the Sn films. The temperature dependence of the cosφ conductance is determined from the resonant response at the junction plasma frequency fp...
Spin-dependent delay time and Hartman effect in asymmetrical graphene barrier under strain
Sattari, Farhad; Mirershadi, Soghra
2018-01-01
We study the spin-dependent tunneling time, including group delay and dwell time, in a graphene based asymmetrical barrier with Rashba spin-orbit interaction in the presence of strain, sandwiched between two normal leads. We find that the spin-dependent tunneling time can be efficiently tuned by the barrier width, and the bias voltage. Moreover, for the zigzag direction strain although the oscillation period of the dwell time does not change, the oscillation amplitude increases by increasing the incident electron angle. It is found that for the armchair direction strain unlike the zigzag direction the group delay time at the normal incidence depends on the spin state of electrons and Hartman effect can be observed. In addition, for the armchair direction strain the spin polarization increases with increasing the RSOI strength and the bias voltage. The magnitude and sign of spin polarization can be manipulated by strain. In particular, by applying an external electric field the efficiency of the spin polarization is improved significantly in strained graphene, and a fully spin-polarized current is generated.
Morphology effects on spin-dependent transport and recombination in polyfluorene thin films
Miller, Richards; van Schooten, K. J.; Malissa, H.; Joshi, G.; Jamali, S.; Lupton, J. M.; Boehme, C.
2016-12-01
We have studied the role of spin-dependent processes on conductivity in polyfluorene (PFO) thin films by preforming continuous wave (cw) electrically detected magnetic resonance (EDMR) spectroscopy at temperatures between 10 K and room temperature using microwave frequencies between about 1 GHz and 20 GHz, as well as pulsed EDMR at the X band (10 GHz). Variable frequency EDMR allows us to establish the role of spin-orbit coupling in spin-dependent processes whereas pulsed EDMR allows for the observation of coherent spin motion effects. We used PFO for this study in order to allow for the investigation of the effects of microscopic morphological ordering since this material can adopt two distinct intrachain morphologies: an amorphous (glassy) phase, in which monomer units are twisted with respect to each other, and an ordered (β) phase, where all monomers lie within one plane. In thin films of organic light-emitting diodes, the appearance of a particular phase can be controlled by deposition parameters and solvent vapor annealing, and is verified by electroluminescence spectroscopy. Under bipolar charge-carrier injection conditions, we conducted multifrequency cw EDMR, electrically detected Rabi spin-beat experiments, and Hahn echo and inversion-recovery measurements. Coherent echo spectroscopy reveals electrically detected electron-spin-echo envelope modulation due to the coupling of the carrier spins to nearby nuclear spins. Our results demonstrate that, while conformational disorder can influence the observed EDMR signals, including the sign of the current changes on resonance as well as the magnitudes of local hyperfine fields and charge-carrier spin-orbit interactions, it does not qualitatively affect the nature of spin-dependent transitions in this material. In both morphologies, we observe the presence of at least two different spin-dependent recombination processes. At room temperature and 10 K, polaron-pair recombination through weakly spin-spin coupled
Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois
2017-02-01
Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.
Resonant Tunneling in Photonic Double Quantum Well Heterostructures
Directory of Open Access Journals (Sweden)
Cox Joel
2010-01-01
Full Text Available Abstract Here, we study the resonant photonic states of photonic double quantum well (PDQW heterostructures composed of two different photonic crystals. The heterostructure is denoted as B/A/B/A/B, where photonic crystals A and B act as photonic wells and barriers, respectively. The resulting band structure causes photons to become confined within the wells, where they occupy discrete quantized states. We have obtained an expression for the transmission coefficient of the PDQW heterostructure using the transfer matrix method and have found that resonant states exist within the photonic wells. These resonant states occur in split pairs, due to a coupling between degenerate states shared by each of the photonic wells. It is observed that when the resonance energy lies at a bound photonic state and the two photonic quantum wells are far away from each other, resonant states appear in the transmission spectrum of the PDQW as single peaks. However, when the wells are brought closer together, coupling between bound photonic states causes an energy-splitting effect, and the transmitted states each have two peaks. Essentially, this means that the system can be switched between single and double transparent states. We have also observed that the total number of resonant states can be controlled by varying the width of the photonic wells, and the quality factor of transmitted peaks can be drastically improved by increasing the thickness of the outer photonic barriers. It is anticipated that the resonant states described here can be used to develop new types of photonic-switching devices, optical filters, and other optoelectronic devices.
Spin-dependent recombination processes in wide band gap II-Mn-VI compounds
International Nuclear Information System (INIS)
Godlewski, M.; Yatsunenko, S.; Khachapuridze, A.; Ivanov, V.Yu.
2004-01-01
Mechanisms of optical detection of magnetic resonance in wide band gap II-Mn-VI diluted magnetic semiconductor (DMS) are discussed based on the results of photoluminescence (PL), PL kinetics, electron spin resonance (ESR) and optically detected magnetic resonance (ODMR) and optically detected cyclotron resonance (ODCR) investigations. Spin-dependent interactions between localized spins of Mn 2+ ions and spins/magnetic moments of free, localized or bound carriers are responsible for the observed ODMR signals. We conclude that these interactions are responsible for the observed rapid shortening of the PL decay time of 4 T 1 → 6 A 1 intra-shell emission of Mn 2+ ions and also for the observed delocalization of excitons in low dimensional structures
Time-dependent transport in interacting and noninteracting resonant-tunneling systems
DEFF Research Database (Denmark)
Jauho, Antti-Pekka; Wingreen, Ned S.; Meir, Yigal
1994-01-01
noninteracting resonant-tunneling system are presented. Due to the coherence between the leads and the resonant site, the current does not follow the driving signal adiabatically: a ''ringing'' current is found as a response to a voltage pulse, and a complex time dependence results in the case of harmonic......We consider a mesoscopic region coupled to two leads under the influence of external time-dependent voltages. The time dependence is coupled to source and drain contacts, the gates controlling the tunnel-barrier heights, or to the gates that define the mesoscopic region. We derive, with the Keldysh...... nonequilibrium-Green-function technique, a formal expression for the fully nonlinear, time-dependent current through the system. The analysis admits arbitrary interactions in the mesoscopic region, but the leads are treated as noninteracting. For proportionate coupling to the leads, the time-averaged current...
Magnetic resonance imaging evaluation of carpal tunnel syndrome
International Nuclear Information System (INIS)
Hachisuka, Hiroki; Kimori, Kenji; Tsuge, Kenya; Murakami, Tsuneji
2006-01-01
In many reports, the severity of carpal tunnel syndrome (CTS) is evaluated by subjective symptoms and nerve conduction findings of the median nerve. However, nerve conduction studies are complicated and the patients occasionally experience pain. In this report, we quantified a morphological change in the median nerve by using MRI, and reviewed a new noninvasive method of CTS evaluation. The survey was carried out on 55 idiopathic CTS patients (45 females and 10 males). The affected areas were 33 right hands and 22 left hands. The average age of the patients was 59 years. We used Philips Gyroscan Intera 1.5 Tesla MRI. T2 weighted axial image of the carpal canal sliced by width of 1 mm was used to measure a minimum axis/maximum axis (median nerve compression rate; MNCR). Simultaneously, we measured the nerve conduction velocity and terminal latency of the motor and sensory nerves; we evaluated the thumb motor disturbance by Hamada's classification and sensory disturbance by Semmes-Weinstein test. The statistical correlations between these items and MNCR were analyzed. MNCR had a significant correlation with all items, particularly with motor nerve conduction velocity and latency, and Hamada's classification. There have been some trials regarding the application of MRI findings for CTS evaluation. In these reports, they measured the cross section of the median nerve or brightness of the median nerve, flexor tendon, or intrinsic muscle. However, it is difficult to measure an MRI cross section or brightness in common practice. MNCR has a statistical correlation with the nerve conduction study, is easy to measure, and noninvasive. MNCR is useful as an objective evaluation method of CTS severity. (author)
Photon-Assisted Resonant Chiral Tunneling Through a Bilayer Graphene Barrier
Phillips A. H.; Mina A. N.
2011-01-01
The electronic transport property of a bilayer graphene is investigated under the effect of an electromagnetic field. We deduce an expression for the conductance by solving the Dirac equation. This conductance depends on the barrier height for graphene and the energy of the induced photons. A resonance oscillatory behavior of the conductance is observed. These oscillations are strongly depends on the barrier height for chiral tunneling through graphene. This oscillatory behavio...
Analysis of the resonant tunneling diode with the stepped pre-barrier
Czech Academy of Sciences Publication Activity Database
Yatskiv, Roman; Voves, J.
2009-01-01
Roč. 193, č. 1 (2009), s. 1-4 ISSN 1742-6588. [16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructure. Monpellier, 24.8.2009 – 28.8.2009] R&D Projects: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801 Institutional research plan: CEZ:AV0Z20670512 Keywords : Resonant tunneling diodes * Nonequilibrium Green functions * Hysteresis Subject RIV: JA - Electronics ; Optoelectronics , Electrical Engineering
Tomita, Satoshi; Yokoyama, Takashi; Yanagi, Hisao; Wood, Ben; Pendry, John B.; Fujii, Minoru; Hayashi, Shinji
2008-01-01
We report resonant photon tunneling (RPT) through onedimensional metamaterials consisting of alternating layers of metal and dielectric. RPT via a surface plasmon polariton state permits evanescent light waves with large wavenumbers to be conveyed through the metamaterial. This is the mechanism for sub-wavelength imaging recently demonstrated with a super-lens. Furthermore, we find that the RPT peak is shifted from the reflectance dip with increasing the number of Al layers, indicating that t...
Energy Technology Data Exchange (ETDEWEB)
Li, Chun-Lei, E-mail: licl@cnu.edu.cn [Laboratory for Micro-sized Functional Materials, College of Elementary Education, Capital Normal University, Beijing 100048 (China); Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 (China); Yuan, Rui-Yang [Center for Theoretical Physics, Department of Physics, Capital Normal University, Beijing 100048 (China); Guo, Yong, E-mail: guoy66@tsinghua.edu.cn [Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
2016-01-07
Using the effective-mass approximation and Floquet theory, we theoretically investigate the terahertz photon-assisted transport through a ZnSe/Zn{sub 1−x}Mn{sub x}Se heterostructure under an external magnetic field, an electric field, and a spatially homogeneous oscillatory field. The results show that both amplitude and frequency of the oscillatory field can accurately manipulate the magnitude of the spin-dependent transmission probability and the positions of the Fano-type resonance due to photon absorption and emission processes. Transmission resonances can be enhanced to optimal resonances or drastically suppressed for spin-down electrons tunneling through the heterostructure and for spin-up ones tunneling through the same structure, resonances can also be enhanced or suppressed, but the intensity is less than the spin-down ones. Furthermore, it is important to note that transmission suppression can be clearly seen from both the spin-down component and the spin-up component of the current density at low magnetic field; at the larger magnetic field, however, the spin-down component is suppressed, and the spin-up component is enhanced. These interesting properties may provide an alternative method to develop multi-parameter modulation electron-polarized devices.
Nonlinear properties of double and triple barrier resonant tunneling structures in the sub-THz range
International Nuclear Information System (INIS)
Karuzskij, A.L.; Perestoronin, A.V.; Volchkov, N.A.
2012-01-01
The high-frequency nonlinear properties of GaAs/AlAs resonant tunneling diode (RTD) nanostructures and perspectives of implementation of the quantum regime of amplification in such structures, which is especially efficient in the range of sub-THz and THz ranges, are investigated. It is shown that in a triple barrier RTD the symmetry between the processes of amplification and dissipation can be avoided because of the interaction of an electromagnetic wave with both of resonant states in two quantum wells, that results in the significant growth of an RTD efficiency [ru
Narrowing the Zero-Field Tunneling Resonance by Decreasing the Crystal Symmetry of Mn12 Acetate.
Espín, Jordi; Zarzuela, Ricardo; Statuto, Nahuel; Juanhuix, Jordi; Maspoch, Daniel; Imaz, Inhar; Chudnovsky, Eugene; Tejada, Javier
2016-07-27
We report the discovery of a less symmetric crystalline phase of Mn12 acetate, a triclinic phase, resulting from recrystallizing the original tetragonal phase reported by Lis in acetonitrile and toluene. This new phase exhibits the same structure of Mn12 acetate clusters and the same positions of tunneling resonances on the magnetic field as the conventional tetragonal phase. However, the width of the zero-field resonance is at least 1 order of magnitude smaller-can be as low as 50 Oe-indicating very small inhomogeneous broadening due to dipolar and nuclear fields.
A Comparison of Resonant Tunneling Based on Schrödinger's Equation and Quantum Hydrodynamics
Directory of Open Access Journals (Sweden)
Naoufel Ben Abdallah
2002-01-01
Full Text Available Smooth quantum hydrodynamic (QHD model simulations of the current–voltage curve of a resonant tunneling diode at 300K are compared with that predicted by the mixed-state Schrödinger equation approach. Although the resonant peak for the QHD simulation occurs at 0.15V instead of the Schrödinger equation value of 0.2V, there is good qualitative agreement between the current–voltage curves for the two models, including the predicted peak current values.
Jahromi, Hamed Dehdashti; Mahmoodi, Ali; Sheikhi, Mohammad Hossein; Zarifkar, Abbas
2016-10-20
Reduction of dark current at high-temperature operation is a great challenge in conventional quantum dot infrared photodetectors, as the rate of thermal excitations resulting in the dark current increases exponentially with temperature. A resonant tunneling barrier is the best candidate for suppression of dark current, enhancement in signal-to-noise ratio, and selective extraction of different wavelength response. In this paper, we use a physical model developed by the authors recently to design a proper resonant tunneling barrier for quantum infrared photodetectors and to study and analyze the spectral response of these devices. The calculated transmission coefficient of electrons by this model and its dependency on bias voltage are in agreement with experimental results. Furthermore, based on the calculated transmission coefficient, the dark current of a quantum dot infrared photodetector with a resonant tunneling barrier is calculated and compared with the experimental data. The validity of our model is proven through this comparison. Theoretical dark current by our model shows better agreement with the experimental data and is more accurate than the previously developed model. Moreover, noise in the device is calculated. Finally, the effect of different parameters, such as temperature, size of quantum dots, and bias voltage, on the performance of the device is simulated and studied.
Tunnel-induced Dipolar Resonances in a Double-well Potential.
Schulz, Bruno; Saenz, Alejandro
2016-11-18
A system of two dipolar particles that are confined in a double-well potential and interact via a realistic isotropic interaction potential is investigated as a protoype for ultracold atoms with a magnetic dipole moment or ultracold dipolar heteronuclear diatomic molecules in double-well traps or in optical lattices. The resulting energy spectrum is discussed as a function of the dipole-dipole interaction strength. The variation of the strength of the dipole-dipole interaction is found to lead to various resonance phenomena. Among those are the previously discussed inelastic confinement-induced resonances as well as the dipole-induced resonances. It is found that the double-well potential gives rise to a new type of resonances, tunnel-induced dipolar ones. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Spin-dependent Goos–Hänchen shift and spin beam splitter in gate-controllable ferromagnetic graphene
International Nuclear Information System (INIS)
Wang, Y.; Liu, Y.; Wang, B.
2014-01-01
The transmission and Goos–Hänchen (GH) shift for charge carriers in gate-controllable ferromagnetic graphene induced by ferromagnetic insulator are investigated theoretically. Numerical results demonstrate that spin-up and spin-down electrons exhibit remarkably different transmission and GH shifts. The spin-dependent GH shifts directly demonstrate the spin beam splitting effect, which can be controlled by the voltage of gate. We attribute the spin beam splitting effect to the combination of tunneling through potential barrier and Zeeman interaction from the magnetic field and the exchange proximity interaction between the ferromagnetic insulator and graphene. In view of the spin beam splitting effect and the spin-dependent GH shifts, the gate-controllable ferromagnetic graphene might be utilized to design spin beam splitter
Spin-dependent Goos–Hänchen shift and spin beam splitter in gate-controllable ferromagnetic graphene
Energy Technology Data Exchange (ETDEWEB)
Wang, Y. [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Liu, Y., E-mail: stslyl@mail.sysu.edu.cn [School of Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Wang, B., E-mail: wangbiao@mail.sysu.edu.cn [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)
2014-03-15
The transmission and Goos–Hänchen (GH) shift for charge carriers in gate-controllable ferromagnetic graphene induced by ferromagnetic insulator are investigated theoretically. Numerical results demonstrate that spin-up and spin-down electrons exhibit remarkably different transmission and GH shifts. The spin-dependent GH shifts directly demonstrate the spin beam splitting effect, which can be controlled by the voltage of gate. We attribute the spin beam splitting effect to the combination of tunneling through potential barrier and Zeeman interaction from the magnetic field and the exchange proximity interaction between the ferromagnetic insulator and graphene. In view of the spin beam splitting effect and the spin-dependent GH shifts, the gate-controllable ferromagnetic graphene might be utilized to design spin beam splitter.
Measuring spin-dependent structure functions at CEBAF
Energy Technology Data Exchange (ETDEWEB)
Schaefer, A. [Universitaet Frankfurt (Germany)
1994-04-01
The author analyses whether CEBAF with a 10 GeV beam could contribute significantly to the understanding of spin-dependent deep-inelastic scattering as well as semi-inclusive reactions. The main advantage of CEBAF is the much better attainable statistics, its great disadvantage its comparably low energy, which limits the accessible x-range to about 0.15 to 0.7. Within these constraints CEBAF could provide (1) high precision data which would be very valuable to understand the Q{sup 2} dependence of the spin-dependent structure functions g{sub 1}(x) and G{sub 2}(x) and (2) the by far most precise determination of the third moments of g{sub 1}(x) and g{sub 2}(x) the latter of which the author argues to be related to a fundamental property of the nucleon.
Measuring spin-dependent structure functions at CEBAF
International Nuclear Information System (INIS)
Schaefer, A.
1994-01-01
The author analyses whether CEBAF with a 10 GeV beam could contribute significantly to the understanding of spin-dependent deep-inelastic scattering as well as semi-inclusive reactions. The main advantage of CEBAF is the much better attainable statistics, its great disadvantage its comparably low energy, which limits the accessible x-range to about 0.15 to 0.7. Within these constraints CEBAF could provide (1) high precision data which would be very valuable to understand the Q 2 dependence of the spin-dependent structure functions g 1 (x) and G 2 (x) and (2) the by far most precise determination of the third moments of g 1 (x) and g 2 (x) the latter of which the author argues to be related to a fundamental property of the nucleon
Direct observation of the spin-dependent Peltier effect.
Flipse, J; Bakker, F L; Slachter, A; Dejene, F K; van Wees, B J
2012-02-05
The Peltier coefficient describes the amount of heat that is carried by an electrical current when it passes through a material. When two materials with different Peltier coefficients are placed in contact with one another, the Peltier effect causes a net flow of heat either towards or away from the interface between them. Spintronics describes the transport of electric charge and spin angular momentum by separate spin-up and spin-down channels in a device. The observation that spin-up and spin-down charge transport channels are able to transport heat independently of each other has raised the possibility that spin currents could be used to heat or cool the interface between materials with different spin-dependent Peltier coefficients. Here, we report the direct observation of the heating and cooling of such an interface by a spin current. We demonstrate this spin-dependent Peltier effect in a spin-valve pillar structure that consists of two ferromagnetic layers separated by a non-ferromagnetic metal. Using a three-dimensional finite-element model, we extract spin-dependent Peltier coefficients in the range -0.9 to -1.3 mV for permalloy. The magnetic control of heat flow could prove useful for the cooling of nanoscale electronic components or devices.
International Nuclear Information System (INIS)
Popescu, Voicu; Ebert, Hubert; Papanikolaou, Nikolaos; Zeller, Rudolf; Dederichs, Peter H
2004-01-01
We present a fully relativistic generalization of the Landauer-Buettiker formalism that has been implemented within the framework of the spin-polarized relativistic screened Korringa-Kohn-Rostoker Green function method. This approach, going beyond the two-current model, supplies a more general description of the electronic transport. It is shown that the relativistic conductance can be split in terms of individual spin-diagonal and spin-off-diagonal (spin-flip) components, which allows a detailed analysis of the influence of spin-orbit-coupling-induced spin-flip processes on the spin-dependent transport. We apply our method to calculate the ballistic conductance in Fe/GaAs/Fe magnetic tunnel junctions. We find that, by removing the spin selection rules, the spin-orbit coupling strongly influences the conductance, not only qualitatively but also quantitatively, especially in the anti-parallel alignment of the magnetization in the two Fe leads
Tunable negative differential resistance in planar graphene superlattice resonant tunneling diode
Sattari-Esfahlan, S. M.; Fouladi-Oskuei, J.; Shojaei, S.
2017-04-01
Here, we study the negative differential resistance (NDR) of Dirac electrons in biased planar graphene superlattice (PGSL) and investigate the transport characteristics by adopted transfer matrix method within Landauer-Buttiker formalism. Our model device is based on one-dimensional Kronig-Penney type electrostatic potential in monolayer graphene deposited on a substrate, where the bias voltage is applied by two electrodes in the left and right. At Low bias voltages, we found that NDR appears due to breaking of minibands to Wannier-Stark ladders (WSLs). At the critical bias voltage, delocalization appeared by WS states leads to tunneling peak current in current-voltage (I-V) characteristics. With increasing bias voltage, crossing of rungs from various WSL results in multi-peak NDR. The results demonstrate that the structure parameters like barrier/well thickness and barrier height have remarkable effect on I-V characteristics of PGSL. In addition, Dirac gap enhances peak to valley (PVR) value due to suppressing Klein tunneling. Our results show that the tunable PVR in PGSL resonant tunneling diode can be achievable by structure parameters engineering. NDR at ultra-low bias voltages, such as 100 mV, with giant PVR of 20 is obtained. In our device, the multiple same NDR peaks with ultra-low bias voltage provide promising prospect for multi-valued memories and the low power nanoelectronic tunneling devices.
Analysis of the current-voltage characteristics lineshapes of resonant tunneling diodes
International Nuclear Information System (INIS)
Rivera, P.H.; Schulz, P.A.
1996-01-01
It is discussed the influence of a two dimensional electron gas at the emitter-barrier interface on the current-voltage characteristics of a Ga As-Al Ga As double-barrier quantum well resonant tunneling diode. This effect is characterized by the modification of the space charge distribution along the structure. Within the framework of a self-consistent calculation we analyse the current-voltage characteristics of the tunneling diodes. This analysis permits us to infer different tunneling ways, related to the formation of confined states in the emitter region, and their signatures in the current-voltage characteristics. We show that varying the spacer layer, together with barrier heights, changes drastically the current density-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics lineshapes. We compare our results with a variety of current-voltage characteristics reported in the literature. The general trend of experimental lineshapes can be reproduced and interpreted with our model. The possibility of tunneling paths is predicted for a range that has not yet been explored experimentally. (author). 12 refs., 4 figs
Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei
2015-03-23
Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn "photon-switches" to "OFF" state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.
Transmission-line resonators for the study of individual two-level tunneling systems
Brehm, Jan David; Bilmes, Alexander; Weiss, Georg; Ustinov, Alexey V.; Lisenfeld, Jürgen
2017-09-01
Parasitic two-level tunneling systems (TLS) emerge in amorphous dielectrics and constitute a serious nuisance for various microfabricated devices, where they act as a source of noise and decoherence. Here, we demonstrate a new test bed for the study of TLS in various materials which provides access to properties of individual TLS as well as their ensemble response. We terminate a superconducting transmission-line resonator with a capacitor that hosts TLS in its dielectric. By tuning TLS via applied mechanical strain, we observe the signatures of individual TLS strongly coupled to the resonator in its transmission characteristics and extract the coupling components of their dipole moments and energy relaxation rates. The strong and well-defined coupling to the TLS bath results in pronounced resonator frequency fluctuations and excess phase noise, through which we can study TLS ensemble effects such as spectral diffusion, and probe theoretical models of TLS interactions.
Resonant-enhanced spectroscopy of molecular rotations with a scanning tunneling microscope.
Natterer, Fabian Donat; Patthey, François; Brune, Harald
2014-07-22
We use rotational excitation spectroscopy with a scanning tunneling microscope to investigate the rotational properties of molecular hydrogen and its isotopes physisorbed on the surfaces of graphene and hexagonal boron nitride (h-BN), grown on Ni(111), Ru(0001), and Rh(111). The rotational excitation energies are in good agreement with ΔJ = 2 transitions of freely spinning p-H2 and o-D2 molecules. The variations of the spectral line shapes for H2 among the different surfaces can be traced back to a molecular resonance-mediated tunneling mechanism. Our data for H2/h-BN/Rh(111) suggest a local intrinsic gating on this surface due to lateral static dipoles. Spectra on a mixed monolayer of H2, HD, and D2 display all three J = 0 → 2 rotational transitions, irrespective of tip position, thus pointing to a multimolecule excitation, or molecular mobility in the physisorbed close-packed layer.
Yamasaki, Tomoaki; Ueda, Miki; Maegawa, Satoru
2003-05-01
A molecular nanomagnet Fe8 with a total spin S=10 in the ground state attracts much attention as a substance which exhibits the quantum tunneling of magnetization below 300 mK. We performed 1H NMR measurements for a single crystal of Fe8 in temperature range between 20 and 800 mK. The spectra below 300 mK strongly depend on the sequence of the applied field and those in the positive and negative fields are not symmetric about zero field, while they are symmetric above 300 mK. We discuss the origin of this hysteresis phenomenon, relating to the initial spin state of molecules, the resonant quantum tunneling and the nuclear spin relaxation process.
International Nuclear Information System (INIS)
Yamasaki, Tomoaki; Ueda, Miki; Maegawa, Satoru
2003-01-01
A molecular nanomagnet Fe8 with a total spin S=10 in the ground state attracts much attention as a substance which exhibits the quantum tunneling of magnetization below 300 mK. We performed 1 H NMR measurements for a single crystal of Fe8 in temperature range between 20 and 800 mK. The spectra below 300 mK strongly depend on the sequence of the applied field and those in the positive and negative fields are not symmetric about zero field, while they are symmetric above 300 mK. We discuss the origin of this hysteresis phenomenon, relating to the initial spin state of molecules, the resonant quantum tunneling and the nuclear spin relaxation process
Current-voltage characteristics of a tunnel junction with resonant centers
International Nuclear Information System (INIS)
Ivanov, T.; Valtchinov, V.
1994-05-01
We calculated the I-V characteristics of a tunnel junction containing impurities in the barrier. We consider the indirect resonant tunneling involving the impurities. The Coulomb repulsion energy E c between two electrons with opposite spins simultaneously residing on the impurity is introduced by an Anderson Hamiltonian. At low temperatures T is much less than E c the I-V characteristics is linear in V both for V c and for V>E c and changes slope at V=E c . This behaviour reflects the energy spectrum of the impurity electrons - the finite value of the charging energy E c . At T ∼ E c the junction reveals an ohmic-like behaviour as a result of the smearing out of the charging effects by the thermal fluctuations. (author). 10 refs, 2 figs
Spin-dependent recombination involving oxygen-vacancy complexes in silicon
Franke, David P.; Hoehne, Felix; Vlasenko, Leonid S.; Itoh, Kohei M.; Brandt, Martin S.
2014-05-01
Spin-dependent relaxation and recombination processes in γ-irradiated n-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between 31P donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics is studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin-1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.
Spin-dependent heat and thermoelectric currents in a Rashba ring coupled to a photon cavity
Abdullah, Nzar Rauf; Tang, Chi-Shung; Manolescu, Andrei; Gudmundsson, Vidar
2018-01-01
Spin-dependent heat and thermoelectric currents in a quantum ring with Rashba spin-orbit interaction placed in a photon cavity are theoretically calculated. The quantum ring is coupled to two external leads with different temperatures. In a resonant regime, with the ring structure in resonance with the photon field, the heat and the thermoelectric currents can be controlled by the Rashba spin-orbit interaction. The heat current is suppressed in the presence of the photon field due to contribution of the two-electron and photon replica states to the transport while the thermoelectric current is not sensitive to changes in parameters of the photon field. Our study opens a possibility to use the proposed interferometric device as a tunable heat current generator in the cavity photon field.
Taylor, Samuel A; Newman, Ashley M; Nguyen, Joseph; Fabricant, Peter D; Baret, Nikolas J; Shorey, Mary; Ramkumar, Prem; O'Brien, Stephen J
2016-02-01
To determine the diagnostic accuracy of magnetic resonance imaging (MRI) for biceps-labrum complex (BLC) lesions, including the extra-articular bicipital tunnel. A retrospective review of 277 shoulders with chronic refractory BLC symptoms that underwent arthroscopic subdeltoid transfer of the long head of the biceps tendon (LHBT) to the conjoint tendon was conducted. Intraoperative lesions were categorized as "inside" (labral tears and dynamic LHBT incarceration), "junctional" (LHBT partial tears, LHBT subluxation, and biceps chondromalacia), or "bicipital tunnel" (extra-articular bicipital tunnel scar/stenosis, loose bodies, LHBT instability, and LHBT partial tears) based on anatomic location. Attending radiologist-generated MRI reports were graded dichotomously as positive or negative for biceps and labral damage and then compared with intraoperative findings. Sensitivity, specificity, positive predictive value (PPV), and negative predictive value (NPV) were calculated for MRI with respect to intraoperative findings. With regard to inside lesions, MRI had an overall sensitivity, specificity, PPV, and NPV for labrum lesions of 77.3%, 68.2%, 57.3%, and 84.5% respectively. The sensitivity, specificity, PPV, and NPV of MRI for junctional lesions were 43.3%, 55.6%, 73.1%, and 26.0%, respectively. For the bicipital tunnel, MRI had a sensitivity, specificity, PPV, and NPV of 50.4%, 61.4%, 48.7%, and 63.0%, respectively. MRI was unreliable for ruling out BLC lesions among chronically symptomatic patients, including when the bicipital tunnel was affected. Copyright © 2016 Arthroscopy Association of North America. Published by Elsevier Inc. All rights reserved.
Qin, Tao; Hofstetter, Walter
2018-03-01
Time-periodically driven systems are a versatile toolbox for realizing interesting effective Hamiltonians. Heating, caused by excitations to high-energy states, is a challenge for experiments. While most setups so far address the relatively weakly interacting regime, it is of general interest to study heating in strongly correlated systems. Using Floquet dynamical mean-field theory, we study nonequilibrium steady states (NESS) in the Falicov-Kimball model, with time-periodically driven kinetic energy or interaction. We systematically investigate the nonequilibrium properties of the NESS. For a driven kinetic energy, we show that resonant tunneling, where the interaction is an integer multiple of the driving frequency, plays an important role in the heating. In the strongly correlated regime, we show that this can be well understood using Fermi's golden rule and the Schrieffer-Wolff transformation for a time-periodically driven system. We furthermore demonstrate that resonant tunneling can be used to control the population of Floquet states to achieve "photodoping." For driven interactions introduced by an oscillating magnetic field near a widely adopted Feshbach resonance, we find that the double occupancy is strongly modulated. Our calculations apply to shaken ultracold-atom systems and to solid-state systems in a spatially uniform but time-dependent electric field. They are also closely related to lattice modulation spectroscopy. Our calculations are helpful to understand the latest experiments on strongly correlated Floquet systems.
Energy Technology Data Exchange (ETDEWEB)
Campbell, Philip M., E-mail: philip.campbell@gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States); Tarasov, Alexey; Joiner, Corey A.; Vogel, Eric M. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Ready, W. Jud [Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States)
2016-01-14
Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.
Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Ready, W. Jud; Vogel, Eric M.
2016-01-01
Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.
Precision measurement of the neutron spin dependent structure functions
International Nuclear Information System (INIS)
Kolomensky, Y.G.
1997-02-01
In experiment E154 at the Stanford Linear Accelerator Center the spin dependent structure function g 1 n (x, Q 2 ) of the neutron was measured by scattering longitudinally polarized 48.3 GeV electrons off a longitudinally polarized 3 He target. The high beam energy allowed the author to extend the kinematic coverage compared to the previous SLAC experiments to 0.014 ≤ x ≤ 0.7 with an average Q 2 of 5 GeV 2 . The author reports the integral of the spin dependent structure function in the measured range to be ∫ 0.014 0.7 dx g 1 n (x, 5 GeV 2 ) = -0.036 ± 0.004(stat.) ± 0.005(syst.). The author observes relatively large values of g 1 n at low x that call into question the reliability of data extrapolation to x → 0. Such divergent behavior disagrees with predictions of the conventional Regge theory, but is qualitatively explained by perturbative QCD. The author performs a Next-to-Leading Order perturbative QCD analysis of the world data on the nucleon spin dependent structure functions g 1 p and g 1 n paying careful attention to the experimental and theoretical uncertainties. Using the parameterizations of the helicity-dependent parton distributions obtained in the analysis, the author evolves the data to Q 2 = 5 GeV 2 , determines the first moments of the polarized structure functions of the proton and neutron, and finds agreement with the Bjorken sum rule
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M.; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J.; Li, Lain-Jong; Wallace, Robert M.; Datta, Suman; Robinson, Joshua A.
2015-01-01
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.
Photon-Assisted Resonant Chiral Tunneling Through a Bilayer Graphene Barrier
Directory of Open Access Journals (Sweden)
Phillips A. H.
2011-01-01
Full Text Available The electronic transport property of a bilayer graphene is investigated under the effect of an electromagnetic field. We deduce an expression for the conductance by solving the Dirac equation. This conductance depends on the barrier height for graphene and the energy of the induced photons. A resonance oscillatory behavior of the conductance is observed. These oscillations are strongly depends on the barrier height for chiral tunneling through graphene. This oscillatory behavior might be due to the interference of different central band and sidebands of graphene states. The present investigation is very important for the application of bilayer graphene in photodetector devices, for example, far-infrared photodevices and ultrafast lasers.
Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Lin, Yu-Chuan
2015-06-19
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.
Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures
International Nuclear Information System (INIS)
Zaitsev, S. V.; Maksimov, A. A.; Tartakovskii, I. I.; Yakovlev, D. R.; Waag, A.
2008-01-01
In is shown that, at high densities of spatially separated electrons and holes in type-II ZnSe/BeTe heterostructures, the conditions for resonance tunneling of photoexcited holes from the ZnSe layer to the BeTe layer are attainable. Nonlinear behavior of the intensity of the photoluminescence band corresponding to spatially direct optical transitions with photoexcitation intensity is observed. Numerical calculations are carried out, and the results are in good agreement with the experimental data in a wide region of variation of the optical pumping intensity
Sidewall gated double well quasi-one-dimensional resonant tunneling transistors
Kolagunta, V. R.; Janes, D. B.; Melloch, M. R.; Youtsey, C.
1997-12-01
We present gating characteristics of submicron vertical resonant tunneling transistors in double quantum well heterostructures. Current-voltage characteristics at room temperature and 77 K for devices with minimum feature widths of 0.9 and 0.7 μm are presented and discussed. The evolution of the I-V characteristics with increasing negative gate biases is related to the change in the lateral confinement, with a transition from a large area 2D to a quasi-1D. Even gating of multiple wells and lateral confinement effects observable at 77 K make these devices ideally suited for applications in multi-valued logic systems and low-dimensional structures.
Tomita, Satoshi; Yokoyama, Takashi; Yanagi, Hisao; Wood, Ben; Pendry, John B; Fujii, Minoru; Hayashi, Shinji
2008-06-23
We report resonant photon tunneling (RPT) through one-dimensional metamaterials consisting of alternating layers of metal and dielectric. RPT via a surface plasmon polariton state permits evanescent light waves with large wavenumbers to be conveyed through the metamaterial. This is the mechanism for sub-wavelength imaging recently demonstrated with a super-lens. Furthermore, we find that the RPT peak is shifted from the reflectance dip with increasing the number of Al layers, indicating that the shift is caused by the losses in the RPT.
Exotic Paired States with Anisotropic Spin-Dependent Fermi Surfaces
International Nuclear Information System (INIS)
Feiguin, Adrian E.; Fisher, Matthew P. A.
2009-01-01
We propose a model for realizing exotic paired states in cold Fermi gases by using a spin-dependent optical lattice to engineer mismatched Fermi surfaces for each hyperfine species. The BCS phase diagram shows a stable paired superfluid state with coexisting pockets of momentum space with gapless unpaired carriers, similar to the Sarma state in polarized mixtures, but in our case the system is unpolarized. We propose the possible existence of an exotic 'Cooper-pair Bose-metal' phase, which has a gap for single fermion excitations but gapless and uncondensed 'Cooper-pair' excitations residing on a 'Bose surface' in momentum space.
International Nuclear Information System (INIS)
Aleksanyan, A.A.; Volchkov, N.A.; Dravin, V.A.; Kazakov, I.P.; Karuzskij, A.L.; Murzin, V.N.; Perestoronin, A.V.; Tskhovrebov, A.M.; Shmelev, S.S.
2014-01-01
Features of the effect of a subterahertz microwave field on the current characteristics of a resonant-tunneling diode in resonance systems with different configurations have been studied. Changes in the current characteristics of the resonant-tunneling diode under variation of the electrophysical parameters of dielectric and microstrip resonators, in particular high-Q-factor superconducting microstrip resonators, have been experimentally studied and analyzed [ru
Spin-dependent Peltier effect in 3D topological insulators
Sengupta, Parijat; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard
2013-03-01
The Peltier effect represents the heat carrying capacity of a certain material when current passes through it. When two materials with different Peltier coefficients are placed together, the Peltier effect causes heat to flow either towards or away from the interface between them. This work utilizes the spin-polarized property of 3D topological insulator (TI) surface states to describe the transport of heat through the spin-up and spin-down channels. It has been observed that the spin channels are able to carry heat independently of each other. Spin currents can therefore be employed to supply or extract heat from an interface between materials with spin-dependent Peltier coefficients. The device is composed of a thin film of Bi2Se3 sandwiched between two layers of Bi2Te3. The thin film of Bi2Se3serves both as a normal and topological insulator. It is a normal insulator when its surfaces overlap to produce a finite band-gap. Using an external gate, Bi2Se3 film can be again tuned in to a TI. Sufficiently thick Bi2Te3 always retain TI behavior. Spin-dependent Peltier coefficients are obtained and the spin Nernst effect in TIs is shown by controlling the temperature gradient to convert charge current to spin current.
Longitudinal spin dependence of massive lepton pair production
International Nuclear Information System (INIS)
Berger, E. L.; Gordon, L. E.; Klasen, M.
2000-01-01
In this paper, the authors summarize recent work in which they demonstrate that the Compton subprocess, q + g -> γ* + q also dominates the Drell-Yan cross section in polarized and unpolarized proton-proton reactions for values of the transverse momentum Q T of the pair that are larger than roughly half of the pair mass Q, Q T > Q/2. The Drell-Yan process is therefore a valuable, heretofore overlooked, independent source of constraints on the spin-averaged and spin-dependent gluon densities. Although the Drell-Yan cross section is smaller than the prompt photon cross section, massive lepton pair production is cleaner theoretically since long-range fragmentation contributions are absent as are the experimental and theoretical complications associated with isolation of the real photon. Moreover, the dynamics of spin-dependence in hard-scattering processes is a sufficiently complex topic, and its understanding at an early stage in its development, that several defensible approaches for extracting polarized parton densities deserve to be pursued with the expectation that consistent results must emerge
International Nuclear Information System (INIS)
Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace; Rajan, Siddharth; Volakis, John L.
2016-01-01
A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. It is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures
International Nuclear Information System (INIS)
Krive, I.V.; Sandstroem, P.
1997-01-01
The persistent current for a one-dimensional ring with two tunneling barriers is considered in the limit of weakly interacting electrons. In addition to small off-resonance current, there are two kinds of resonant behaviour; (i) a current independent of the barrier transparency (true resonance) and (ii) a current analogous to the one for a ring with only single barrier (''semi''-resonance). For a given barrier transparency the realization of this or that type of resonant behaviour depends both on the geometrical factor (the ratio of interbarrier distance to a ring circumference) and on the strength of electron-electron interaction. It is shown that repulsive interaction favours the ''semi''-resonance behaviour. For a small barrier transparency the ''semi''-resonance peaks are easily washed out by temperature whereas the true resonance peaks survive. (author). 22 refs, 2 figs
Effect of resonant tunneling on electroluminescence in nc-Si/SiO2 multilayers-based p-i-n structure
International Nuclear Information System (INIS)
Chen, D.Y.; Wang, Y.Y.; Sun, Y.; He, Y.J.; Zhang, G.
2015-01-01
P-i-n structures with SiO 2 /nc-Si/SiO 2 multilayers as intrinsic layer were prepared in conventional plasma enhanced chemical vapor deposition system. Their carrier transport and electroluminescence properties were investigated. Two resonant tunneling related current peaks with current dropping gradually under forward bias were observed in the current voltage curve. Non-uniformity of the interfaces might be responsible for the gradual dropping of the current. Electroluminescence intensity of the device under bias of 7 V which is near the resonant tunneling peak voltage of 7.2 V was weaker than that under 6.5 V. According to the Gaussian fitting results of the spectra, the intensity of the sub-peak of 650 nm originating from recombination of injected electrons and holes was decreased the most. When resonant tunneling conditions are met, it might be that most of the injected electrons participate in resonant tunneling and fewer in Pool–Frenkel tunneling, which is the main carrier transport mechanism, to contribute to electroluminescence intensity. - Highlights: • Two resonant tunneling peaks with current dropping gradually were observed. • The EL intensity of the structure under resonant tunneling peak voltage is weakened. • P–F tunneling is the main transport mechanism besides resonant tunneling
Generation of constant-amplitude radio-frequency sweeps at a tunnel junction for spin resonance STM
International Nuclear Information System (INIS)
Paul, William; Lutz, Christopher P.; Heinrich, Andreas J.; Baumann, Susanne
2016-01-01
We describe the measurement and successful compensation of the radio-frequency transfer function of a scanning tunneling microscope over a wide frequency range (15.5–35.5 GHz) and with high dynamic range (>50 dB). The precise compensation of cabling resonances and attenuations is critical for the production of constant-voltage frequency sweeps for electric-field driven electron spin resonance (ESR) experiments. We also demonstrate that a well-calibrated tunnel junction voltage is necessary to avoid spurious ESR peaks that can arise due to a non-flat transfer function.
Generation of constant-amplitude radio-frequency sweeps at a tunnel junction for spin resonance STM
Energy Technology Data Exchange (ETDEWEB)
Paul, William; Lutz, Christopher P.; Heinrich, Andreas J. [IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Baumann, Susanne [IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)
2016-07-15
We describe the measurement and successful compensation of the radio-frequency transfer function of a scanning tunneling microscope over a wide frequency range (15.5–35.5 GHz) and with high dynamic range (>50 dB). The precise compensation of cabling resonances and attenuations is critical for the production of constant-voltage frequency sweeps for electric-field driven electron spin resonance (ESR) experiments. We also demonstrate that a well-calibrated tunnel junction voltage is necessary to avoid spurious ESR peaks that can arise due to a non-flat transfer function.
Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes
Soderstrom, J. R.; Brown, E. R.; Parker, C. D.; Mahoney, L. J.; Yao, J. Y.
1991-01-01
InAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.
Bottom quark contribution to spin-dependent dark matter detection
Directory of Open Access Journals (Sweden)
Jinmian Li
2016-05-01
Full Text Available We investigate a previously overlooked bottom quark contribution to the spin-dependent cross section for Dark Matter (DM scattering from the nucleon. While the mechanism is relevant to any supersymmetric extension of the Standard Model, for illustrative purposes we explore the consequences within the framework of the Minimal Supersymmetric Standard Model (MSSM. We study two cases, namely those where the DM is predominantly Gaugino or Higgsino. In both cases, there is a substantial, viable region in parameter space (mb˜−mχ≲O(100 GeV in which the bottom contribution becomes important. We show that a relatively large contribution from the bottom quark is consistent with constraints from spin-independent DM searches, as well as some incidental model dependent constraints.
Monte Carlo determination of the spin-dependent potentials
International Nuclear Information System (INIS)
Campostrini, M.; Moriarty, K.J.M.; Rebbi, C.
1987-05-01
Calculation of the bound states of heavy quark systems by a Hamiltonian formulation based on an expansion of the interaction into inverse powers of the quark mass is discussed. The potentials for the spin-orbit and spin-spin coupling between quark and antiquark, which are responsible for the fine and hyperfine splittings in heavy quark spectroscopy, are expressed as expectation values of Wilson loop factors with suitable insertions of chromomagnetic or chromoelectric fields. A Monte Carlo simulation has been used to evaluate the expectation values and, from them, the spin-dependent potentials. The Monte Carlo calculation is reported to show a long-range, non-perturbative component in the interaction
Current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation
Directory of Open Access Journals (Sweden)
N Hatefi Kargan
2013-09-01
Full Text Available In this paper, current-voltage characteristic of a resonant tunneling diode under electromagnetic radiation has been calculated and compared with the results when there is no electromagnetic radiation. For calculating current -voltage characteristic, it is required to calculate the transmission coefficient of electrons from the well and barrier structures of this device. For calculating the transmission coefficient of electrons at the presence of electromagnetic radiation, Finite Difference Time Domain (FDTD method has been used and when there is no electromagnetic radiation Transfer Matrix Method (TMM and finite diffirence time domain method have been used. The results show that the presence of electromagnetic radiation causes resonant states other than principal resonant state (without presence of electromagnetic radiation to appear on the transmition coefficient curve where they are in distances from the principal peak and from each other. Also, the presence of electromagnetic radiation causes peaks other than principal peak to appear on the current-voltage characteristics of the device. Under electromagnetic radiation, the number of peaks on the current-voltage curve is smaller than the number of peaks on the current-voltage transmission coefficient. This is due to the fact that current-voltage curve is the result of integration on the energy of electrons, Thus, the sharper and low height peaks on the transmission coefficient do not appear on the current-voltage characteristic curve.
Intrinsic current oscillations in an asymmetric triple-barrier resonant tunnelling diode
International Nuclear Information System (INIS)
Wójcik, P; Spisak, B J; Wołoszyn, M; Adamowski, J
2010-01-01
The electronic transport characteristics of an asymmetric triple-barrier resonant tunnelling diode are calculated by the time-dependent Wigner–Poisson method. The intrinsic current oscillations are found in two separate bias voltage ranges. The first one is located below the resonant current peak, and the second lies in the negative differential resistance region. We provide the explanation of the current density oscillations in these two separate bias voltage ranges based on the analysis of the self-consistent potential profiles and changes of electron density. We have shown that two different formation mechanisms are responsible for the current density oscillations in these two bias voltage ranges. In the bias voltage range below the resonant current peak in the current–voltage characteristics, the current density oscillations are caused by the coupling between quasi-bound states in the left and right quantum wells. On the other hand, the current density oscillations in the negative differential resistance region result from the coupling between quasi-bound states in the left quantum well and the quantum well formed in the region of the left contact
Makeev, M. O.; Meshkov, S. A.; Sinyakin, V. Yu
2017-11-01
In the present work the thermal degradation of IV curves of AlAs/GaAs resonant tunneling diodes using artificial aging method was investigated. The dependency of AuGeNi specific ohmic contact resistance on time and temperature was determined.
International Nuclear Information System (INIS)
Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.
1995-01-01
We report the first observation of resonant tunneling through a CdTe/Cd 1-x Mg x Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author)
Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction
Directory of Open Access Journals (Sweden)
Carla Aramo
2015-03-01
Full Text Available A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube–silicon (CNT–Si heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise.
Jacobs, K. J. P.; Stevens, B. J.; Baba, R.; Wada, O.; Mukai, T.; Hogg, R. A.
2017-10-01
We report valley current characterisation of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTDs) grown by metal-organic vapour phase epitaxy (MOVPE) for THz emission, with a view to investigate the origin of the valley current and optimize device performance. By applying a dual-pass fabrication technique, we are able to measure the RTD I-V characteristic for different perimeter/area ratios, which uniquely allows us to investigate the contribution of leakage current to the valley current and its effect on the PVCR from a single device. Temperature dependent (20 - 300 K) characteristics for a device are critically analysed and the effect of temperature on the maximum extractable power (PMAX) and the negative differential conductance (NDC) of the device is investigated. By performing theoretical modelling, we are able to explore the effect of typical variations in structural composition during the growth process on the tunnelling properties of the device, and hence the device performance.
Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures
Mitrovic, I. Z.; Weerakkody, A. D.; Sedghi, N.; Ralph, J. F.; Hall, S.; Dhanak, V. R.; Luo, Z.; Beeby, S.
2018-01-01
We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising bilayer (Nb2O5/Al2O3) insulator configurations with similar (Nb/Nb) and dissimilar (Nb/Ag) metal electrodes. The electron affinity, valence band offset, and metal work function were ascertained by X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and electrical measurements on fabricated reference structures. The experimental band line-up parameters were fed into a theoretical model to predict available bound states in the Nb2O5/Al2O3 quantum well and generate tunneling probability and transmittance curves under applied bias. The onset of strong resonance in the sub-V regime was found to be controlled by a work function difference of Nb/Ag electrodes in agreement with the experimental band alignment and theoretical model. A superior low-bias asymmetry of 35 at 0.1 V and a responsivity of 5 A/W at 0.25 V were observed for the Nb/4 nm Nb2O5/1 nm Al2O3/Ag structure, sufficient to achieve a rectification of over 90% of the input alternate current terahertz signal in a rectenna device.
Resonant tunneling via a Ru–dye complex using a nanoparticle bridge junction
Nishijima, Satoshi; Otsuka, Yoichi; Ohoyama, Hiroshi; Kajimoto, Kentaro; Araki, Kento; Matsumoto, Takuya
2018-06-01
Nonlinear current–voltage (I–V) characteristics is an important property for the realization of information processing in molecular electronics. We studied the electrical conduction through a Ru–dye complex (N-719) on a 2-aminoethanethiol (2-AET) monolayer in a nanoparticle bridge junction system. The nonlinear I–V characteristics exhibited a threshold voltage at around 1.2 V and little temperature dependence. From the calculation of the molecular states using density functional theory and the energy alignment between the electrodes and molecules, the conduction mechanism in this system was considered to be resonant tunneling via the HOMO level of N-719. Our results indicate that the weak electronic coupling of electrodes and molecules is essential for obtaining nonlinear I–V characteristics with a clear threshold voltage that reflect the intrinsic molecular state.
Mistakidis, Simeon; Koutentakis, Georgios; Schmelcher, Peter; Theory Group of Fundamental Processes in Quantum Physics Team
2017-04-01
The non-equilibrium dynamics of small boson ensembles in one-dimensional optical lattices is explored upon a sudden quench of an additional harmonic trap from strong to weak confinement. We find that the competition between the initial localization and the repulsive interaction leads to a resonant response of the system for intermediate quench amplitudes, corresponding to avoided crossings in the many-body eigenspectrum with varying final trap frequency. In particular, we show that these avoided crossings can be utilized to prepare the system in a desired state. The dynamical response is shown to depend on both the interaction strength as well as the number of atoms manifesting the many-body nature of the tunneling dynamics. Deutsche Forschungsgemeinschaft (DFG) in the framework of the SFB 925 ``Light induced dynamics and control of correlated quantum systems''.
Wernsdorfer, W.; Ohm, T.; Sangregorio, C.; Sessoli, R.; Mailly, D.; Paulsen, C.
1999-05-01
Below 360 mK, Fe8 magnetic molecular clusters are in the pure quantum relaxation regime and we show that the predicted ``square-root time'' relaxation is obeyed, allowing us to develop a new method for watching the evolution of the distribution of molecular spin states in the sample. We measure as a function of applied field H the statistical distribution P\\(ξH\\) of magnetic energy bias ξH acting on the molecules. Tunneling initially causes rapid transitions of molecules, thereby ``digging a hole'' in P\\(ξH\\) (around the resonant condition ξH = 0). For small initial magnetization values, the hole width shows an intrinsic broadening which may be due to nuclear spins.
Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells
Lee, Joon-Ho; Shin, Mincheol; Byun, Seok-Joo; Kim, Wangki
2018-03-01
Resonant-tunneling diodes (RTDs) with auxiliary quantum wells ( e.g., emitter prewell, subwell, and collector postwell) are studied using a Wigner transport equation (WTE) discretized by a thirdorder upwind differential scheme. A flat-band potential profile is used for the WTE simulation. Our calculations revealed functions of the auxiliary wells as follows: The prewell increases the current density ( J) and the peak voltage ( V p ) while decreasing the peak-to-valley current ratio (PVCR), and the postwell decreases J while increasing the PVCR. The subwell affects J and PVCR, but its main effect is to decrease V p . When multiple auxiliary wells are used, each auxiliary well contributes independently to the transport without producing side effects.
Resonant tunnelling features in a suspended silicon nanowire single-hole transistor
Energy Technology Data Exchange (ETDEWEB)
Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)
2015-11-30
Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.
A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor
Directory of Open Access Journals (Sweden)
Mohammad Javad Sharifi
2009-01-01
Full Text Available A new structure for an exclusive-OR (XOR gate based on the resonant-tunneling high electron mobility transistor (RTHEMT is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.
International Nuclear Information System (INIS)
Perez-Alvarez, R.; Rodriguez-Coppola, H.; Lopez-Gondar, J.; Izquierdo, M.L.
1987-11-01
We develop the quasiclassical approximation for the effective Hamiltonians describing nonhomogeneous systems and we deduce the wave function, the applicability conditions and the connection rules around the turning points. Based on the transfer matrix (TM) formalism we obtain expressions for the transmission coefficient of multiple barriers, the energy levels of multiple wells and the quasistationary levels of a well open by one, and by the two sides. The dispersion relation of a periodic potential profile with variable mass problem is also given. We discuss resonant tunneling for a system of multiple barriers. The transmission coefficient of such a barrier is maximum at energies close to the levels of the inner well when the end barriers are high enough and symmetric. (author). 20 refs, 1 fig
Resonant tunnelling features in a suspended silicon nanowire single-hole transistor
International Nuclear Information System (INIS)
Llobet, Jordi; Pérez-Murano, Francesc; Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K.; Arbiol, Jordi
2015-01-01
Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations
Takahashi, Hideyuki; Imai, Yoshinori; Maeda, Atsutaka
2016-06-01
We present a design for a tunneling-current-assisted scanning near-field microwave microscope. For stable operation at cryogenic temperatures, making a small and rigid microwave probe is important. Our coaxial resonator probe has a length of approximately 30 mm and can fit inside the 2-in. bore of a superconducting magnet. The probe design includes an insulating joint, which separates DC and microwave signals without degrading the quality factor. By applying the SMM to the imaging of an electrically inhomogeneous superconductor, we obtain the spatial distribution of the microwave response with a spatial resolution of approximately 200 nm. Furthermore, we present an analysis of our SMM probe based on a simple lumped-element circuit model along with the near-field microwave measurements of silicon wafers having different conductivities.
Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure
Bescond, M.; Logoteta, D.; Michelini, F.; Cavassilas, N.; Yan, T.; Yangui, A.; Lannoo, M.; Hirakawa, K.
2018-02-01
We study by means of full quantum simulations the operating principle and performance of a semiconductor heterostructure refrigerator combining resonant tunneling filtering and thermionic emission. Our model takes into account the coupling between the electric and thermal currents by self-consistently solving the transport equations within the non-equilibrium Green’s function framework and the heat equation. We show that the device can achieve relatively high cooling power values, while in the considered implementation, the maximum lattice temperature drop is severely limited by the thermal conductivity of the constituting materials. In such an out-of-equilibrium structure, we then emphasize the significant deviation of the phonon temperature from its electronic counterpart which can vary over several hundred Kelvin. The interplay between those two temperatures and the impact on the electrochemical potential is also discussed. Finally, viable options toward an optimization of the device are proposed.
Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system
Energy Technology Data Exchange (ETDEWEB)
Kobayashi, T., E-mail: t.kobayashi@unsw.edu.au; Heijden, J. van der; House, M. G.; Hile, S. J.; Asshoff, P.; Simmons, M. Y.; Rogge, S. [Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney 2052 New South Wales (Australia); Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Vinet, M. [Université Grenoble-Alpes and CEA, LETI, MINATEC, 38000 Grenoble (France)
2016-04-11
We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO{sub 2} interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.
Resonant tunneling diodes based on ZnO for quantum cascade structures (Conference Presentation)
Hinkov, Borislav; Schwarz, Benedikt; Harrer, Andreas; Ristanic, Daniela; Schrenk, Werner; Hugues, Maxime; Chauveau, Jean-Michel; Strasser, Gottfried
2017-02-01
The terahertz (THz) spectral range (lambda 30µm - 300µm) is also known as the "THz-gap" because of the lack of compact semiconductor devices. Various real-world applications would strongly benefit from such sources like trace-gas spectroscopy or security-screening. A crucial step is the operation of THz-emitting lasers at room temperature. But this seems out of reach with current devices, of which GaAs-based quantum cascade lasers (QCLs) seem to be the most promising ones. They are limited by the parasitic, non-optical LO-phonon transitions (36meV in GaAs), being on the same order as the thermal energy at room temperature (kT = 26meV). This can be solved by using larger LO-phonon materials like ZnO (E_LO = 72meV). But to master the fabrication of ZnO-based QC structures, a high quality epitaxial growth is crucial followed by a well-controlled fabrication process including ZnO/ZnMgO etching. We use devices grown on m-plane ZnO-substrate by molecular beam epitaxy. They are patterned by reactive ion etching in a CH4-based chemistry (CH4:H2:Ar/30:3:3 sccm) into 50μm to 150μm square mesas. Resonant tunneling diode structures are investigated in this geometry and are presented including different barrier- and well-configurations. We extract contact resistances of 8e-5 Omega cm^2 for un-annealed Ti/Au contacts and an electron mobility of above 130cm^2/Vs, both in good agreement with literature. Proving that resonant electron tunneling can be achieved in ZnO is one of the crucial building blocks of a QCL. This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 665107.
Directory of Open Access Journals (Sweden)
Kunito Fukuda
2017-08-01
Full Text Available Spin-dependent space-charge-limited carrier conduction in a Schottky barrier diode using polycrystalline p-type π-conjugated molecular pentacene is explored using multiple-frequency electrically detected magnetic resonance (EDMR spectroscopy with a variable-angle configuration. The measured EDMR spectra are decomposed into two components derived, respectively, from mobile and trapped positive polarons. The linewidth of the EDMR signal for the trapped polarons increases with increasing resonance magnetic field for an in-plane configuration where the normal vector of the device substrate is perpendicular to the resonance magnetic field, while it is independent of the field for an out-of-plane configuration. This difference is consistent with the pentacene arrangement on the device substrate, where pentacene molecules exhibit a uniaxial orientation on the out-of-substrate plane. By contrast, the mobile polarons do not show anisotropic behavior with respect to the resonance magnetic field, indicating that the anisotropic effect is averaged out owing to carrier motion. These results suggest that the orientational arrangements of polycrystalline pentacene molecules in a nano thin film play a crucial role in spin-dependent electrical conduction.
Fukuda, Kunito; Asakawa, Naoki
2017-08-01
Spin-dependent space charge limited carrier conduction in a Schottky barrier diode using polycrystalline p-type π-conjugated molecular pentacene is explored using multiple-frequency electrically detected magnetic resonance (EDMR) spectroscopy with a variable-angle configuration. The measured EDMR spectra are decomposed into two components derived respectively from mobile and trapped positive polarons. The linewidth of the EDMR signal for the trapped polarons increases with increasing resonance magnetic field for an in-plane configuration where the normal vector of the device substrate is perpendicular to the resonance magnetic field, while it is independent of the field for an out-of-plane configuration. This difference is consistent with the pentacene arrangement on the device substrate, where pentacene molecules exhibit a uniaxial orientation on the out-of-substrate plane. By contrast, the mobile polarons do not show anisotropic behavior with respect to the resonance magnetic field, indicating that the anisotropic effect is averaged out owing to carrier motion. These results suggest that the orientational arrangements of polycrystalline pentacene molecules in a nano thin film play a crucial role in spin-dependent electrical conduction.
Salajegheh, Maral; Nejad, S. Mohammad Moosavi; Khanpour, Hamzeh; Tehrani, S. Atashbar
2018-05-01
In this paper, we present SMKA18 analysis, which is a first attempt to extract the set of next-to-next-leading-order (NNLO) spin-dependent parton distribution functions (spin-dependent PDFs) and their uncertainties determined through the Laplace transform technique and Jacobi polynomial approach. Using the Laplace transformations, we present an analytical solution for the spin-dependent Dokshitzer-Gribov-Lipatov-Altarelli-Parisi evolution equations at NNLO approximation. The results are extracted using a wide range of proton g1p(x ,Q2) , neutron g1n(x ,Q2) , and deuteron g1d(x ,Q2) spin-dependent structure functions data set including the most recent high-precision measurements from COMPASS16 experiments at CERN, which are playing an increasingly important role in global spin-dependent fits. The careful estimations of uncertainties have been done using the standard Hessian error propagation. We will compare our results with the available spin-dependent inclusive deep inelastic scattering data set and other results for the spin-dependent PDFs in literature. The results obtained for the spin-dependent PDFs as well as spin-dependent structure functions are clearly explained both in the small and large values of x .
International Nuclear Information System (INIS)
Frank, A.I.; Bondarenko, I.V.; Balashov, S.N.; Geltenbort, P.; Hoghoj, P.; Kozlov, A.V.; Masalovich, S.V.; Toperverg, B.P.
2004-01-01
With the aim to test experimentally the dispersion law validity for very slow neutrons a spectrum of ultracold neutrons (UCN) under the condition of resonance tunneling through the moving Neutron Interference Filter was investigated. The neutron spectrum in this case has a narrow width resonance, whose parameters depend on the filter characteristics and dispersion law of neutron waves in matter. For a number of samples a noticeable shift of the resonance position when the filter moved parallel to its surface was detected. This shift is in strong contradiction with the commonly accepted dispersion law. Further investigations have shown that the spectrum of tunneling neutrons is not exactly defined by the solution of one-dimensional quantum problem, but substantially affected by neutron scattering from filter imperfections. The cross section of this scattering depends on the neutron wave number and increases dramatically in resonance conditions. Experimental results as well as comprehensive theoretical analysis have led us to the unambiguous conclusion that observed phenomena of the resonance shift in a moving sample are caused by scattering of neutron tunneling states rather than by a deviation from the commonly accepted dispersion law. (author)
Cheng, Jian-Yih; Fisher, Brandon L.; Guisinger, Nathan P.; Lilley, Carmen M.
2017-12-01
Providing a spin-free host material in the development of quantum information technology has made silicon a very interesting and desirable material for qubit design. Much of the work and experimental progress has focused on isolated phosphorous atoms. In this article, we report on the exploration of Ni-Si clusters that are atomically manufactured via self-assembly from the bottom-up and behave as isolated quantum dots. These small quantum dot structures are probed at the atomic-scale with scanning tunneling microscopy and spectroscopy, revealing robust resonance through discrete quantized energy levels within the Ni-Si clusters. The resonance energy is reproducible and the peak spacing of the quantum dot structures increases as the number of atoms in the cluster decrease. Probing these quantum dot structures on degenerately doped silicon results in the observation of negative differential resistance in both I-V and dI/dV spectra. At higher surface coverage of nickel, a well-known √19 surface modification is observed and is essentially a tightly packed array of the clusters. Spatial conductance maps reveal variations in the local density of states that suggest the clusters are influencing the electronic properties of their neighbors. All of these results are extremely encouraging towards the utilization of metal modified silicon surfaces to advance or complement existing quantum information technology.
International Nuclear Information System (INIS)
Shen Jianqi; Zeng Ruixi
2017-01-01
Quantum-dot-molecular phase coherence (and the relevant quantum-interference-switchable optical response) can be utilized to control electromagnetic wave propagation via a gate voltage, since quantum-dot molecules can exhibit an effect of quantum coherence (phase coherence) when quantum-dot-molecular discrete multilevel transitions are driven by an electromagnetic wave. Interdot tunneling of carriers (electrons and holes) controlled by the gate voltage can lead to destructive quantum interference in a quantum-dot molecule that is coupled to an incident electromagnetic wave, and gives rise to a quantum coherence effect (e.g., electromagnetically induced transparency, EIT) in a quantum-dot-molecule dielectric film. The tunable on- and off-resonance tunneling effect of an incident electromagnetic wave (probe field) through such a quantum-coherent quantum-dot-molecule dielectric film is investigated. It is found that a high gate voltage can lead to the EIT phenomenon of the quantum-dot-molecular systems. Under the condition of on-resonance light tunneling through the present quantum-dot-molecule dielectric film, the probe field should propagate without loss if the probe frequency detuning is zero. Such an effect caused by both EIT and resonant tunneling, which is sensitive to the gate voltage, can be utilized for designing devices such as photonic switching, transistors, and logic gates. (author)
Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions
Kuroda, Tatsuya; Mori, Nobuya
2018-04-01
The band-to-band (BTB) tunneling current J through in-plane MoS2/WS2 heterojunctions is calculated by the nonequilibrium Green function method combined with tight-binding approximation. Types A and B of band configurations are considered. For type-A (type-B) heterojunctions, a potential notch exists (or is absent) at the heterointerface. Both type-A and type-B MoS2/WS2 heterojunctions can support a higher BTB current than MoS2 and WS2 homojunctions. For type-A heterojunctions, the resonant enhancement of J occurs resulting in a significantly higher BTB tunneling current.
Ficek, Filip; Fadeev, Pavel; Flambaum, Victor V.; Jackson Kimball, Derek F.; Kozlov, Mikhail G.; Stadnik, Yevgeny V.; Budker, Dmitry
2018-05-01
Heretofore undiscovered spin-0 or spin-1 bosons can mediate exotic spin-dependent interactions between standard model particles. Here, we carry out the first search for semileptonic spin-dependent interactions between matter and antimatter. We compare theoretical calculations and spectroscopic measurements of the hyperfine structure of antiprotonic helium to constrain exotic spin- and velocity-dependent interactions between electrons and antiprotons.
Electromagnetic pulse-driven spin-dependent currents in semiconductor quantum rings.
Zhu, Zhen-Gang; Berakdar, Jamal
2009-04-08
We investigate the non-equilibrium charge and spin-dependent currents in a quantum ring with a Rashba spin-orbit interaction (SOI) driven by two asymmetric picosecond electromagnetic pulses. The equilibrium persistent charge and persistent spin-dependent currents are investigated as well. It is shown that the dynamical charge and the dynamical spin-dependent currents vary smoothly with a static external magnetic flux and the SOI provides a SU(2) effective flux that changes the phases of the dynamic charge and the dynamic spin-dependent currents. The period of the oscillation of the total charge current with the delay time between the pulses is larger in a quantum ring with a larger radius. The parameters of the pulse fields control to a certain extent the total charge and the total spin-dependent currents. The calculations are applicable to nanometre rings fabricated in heterojunctions of III-V and II-VI semiconductors containing several hundreds of electrons.
Spin-dependent hot electron transport and nano-scale magnetic imaging of metal/Si structures
International Nuclear Information System (INIS)
Kaidatzis, A.
2008-10-01
In this work, we experimentally study spin-dependent hot electron transport through metallic multilayers (ML), containing single magnetic layers or 'spin-valve' (SV) tri layers. For this purpose, we have set up a ballistic electron emission microscope (BEEM), a three terminal extension of scanning tunnelling microscopy on metal/semiconductor structures. The implementation of the BEEM requirements into the sample fabrication is described in detail. Using BEEM, the hot electron transmission through the ML's was systematically measured in the energy range 1-2 eV above the Fermi level. By varying the magnetic layer thickness, the spin-dependent hot electron attenuation lengths were deduced. For the materials studied (Co and NiFe), they were compared to calculations and other determinations in the literature. For sub-monolayer thickness, a non uniform morphology was observed, with large transmission variations over sub-nano-metric distances. This effect is not yet fully understood. In the imaging mode, the magnetic configurations of SV's were studied under field, focusing on 360 degrees domain walls in Co layers. The effects of the applied field intensity and direction on the DW structure were studied. The results were compared quantitatively to micro-magnetic calculations, with an excellent agreement. From this, it can be shown that the BEEM magnetic resolution is better than 50 nm. (author)
International Nuclear Information System (INIS)
Chowdhury, Subhra; Biswas, Dhrubes; Chattaraj, Swarnabha
2015-01-01
For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current–voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure. (paper)
Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Li, Ming-Yang; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L.; Lan, Yann-Wen
2017-01-01
High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.
Resonant optical tunneling-induced enhancement of the photonic spin Hall effect
Jiang, Xing; Wang, Qingkai; Guo, Jun; Zhang, Jin; Chen, Shuqing; Dai, Xiaoyu; Xiang, Yuanjiang
2018-04-01
Due to the quantum analogy with optics, the resonant optical tunneling effect (ROTE) has been proposed to investigate both the fundamental physics and the practical applications of optical switches and liquid refractive index sensors. In this paper, the ROTE is used to enhance the spin Hall effect (SHE) of transmitted light. It is demonstrated that sandwiching a layer of a high-refractive-index medium (boron nitride crystal) between two low-refractive-index layers (silica) can effectively enhance the photonic SHE due to the increased refractive index gradient and an enhanced evanescent field near the interface between silica and boron nitride. A maximum transverse shift of the horizontal polarization state in the ROTE structure of about 22.25 µm has been obtained, which is at least three orders of magnitude greater than the transverse shift in the frustrated total internal reflection structure. Moreover, the SHE can be manipulated by controlling the component materials and the thickness of the ROTE structure. These findings open the possibility for future applications of photonic SHE in precision metrology and spin-based photonics.
A novel micro-accelerometer with adjustable sensitivity based on resonant tunnelling diodes
International Nuclear Information System (INIS)
Ji-Jun, Xiong; Wen-Dong, Zhang; Kai-Qun, Wang; Hai-Yang, Mao
2009-01-01
Resonant tunnelling diodes (RTDs) have negative differential resistance effect, and the current-voltage characteristics change as a function of external stress, which is regarded as meso-piezoresistance effect of RTDs. In this paper, a novel micro-accelerometer based on AlAs/GaAs/In 0.1 Ga 0.9 As/GaAs/AlAs RTDs is designed and fabricated to be a four-beam-mass structure, and an RTD-Wheatstone bridge measurement system is established to test the basic properties of this novel accelerometer. According to the experimental results, the sensitivity of the RTD based micro-accelerometer is adjustable within a range of 3 orders when the bias voltage of the sensor changes. The largest sensitivity of this RTD based micro-accelerometer is 560.2025 mV/g which is about 10 times larger than that of silicon based micro piezoresistive accelerometer, while the smallest one is 1.49135 mV/g. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
Lin, Che-Yu
2017-10-04
High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.
Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications
Rothmayr, F.; Pfenning, A.; Kistner, C.; Koeth, J.; Knebl, G.; Schade, A.; Krueger, S.; Worschech, L.; Hartmann, F.; Höfling, S.
2018-04-01
We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additional quaternary Ga0.64In0.36As0.33Sb0.67 absorption layer covering the fingerprint absorption lines of various gases in the mid-infrared wavelength spectral region. The absorption layer cut-off wavelength is determined to be 3.5 μm, and the RTD-PDs show peak-to-valley current ratios up to 4.3 with a peak current density of 12 A/cm-2. The incorporation of the quaternary absorption layer enables the RTD-PDs to be sensitive to illumination with light up to the absorption lines of HCl at 3395 nm. At this wavelength, the detector shows a responsivity of 6.3 mA/W. At the absorption lines of CO2 and CO at 2004 nm and 2330 nm, respectively, the RTD-PDs reach responsivities up to 0.97 A/W. Thus, RTD-PDs pave the way towards high sensitive mid-infrared detectors that can be utilized in tunable laser absorption spectroscopy.
Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells
International Nuclear Information System (INIS)
Takeda, Yasuhiko; Sugimoto, Noriaki; Ichiki, Akihisa; Kusano, Yuya; Motohiro, Tomoyoshi
2015-01-01
Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs) and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs
Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells
Energy Technology Data Exchange (ETDEWEB)
Takeda, Yasuhiko, E-mail: takeda@mosk.tytlabs.co.jp; Sugimoto, Noriaki [Toyota Central Research and Development Laboratories, Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192 (Japan); Ichiki, Akihisa [Green Mobility Collaborative Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Kusano, Yuya [Green Mobility Collaborative Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Toyota Motor Corp., 1200 Mishuku, Susono, Shizuoka 410-1193 (Japan); Motohiro, Tomoyoshi [Toyota Central Research and Development Laboratories, Inc., 41-1, Yokomichi, Nagakute, Aichi 480-1192 (Japan); Green Mobility Collaborative Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan)
2015-09-28
Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs) and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs.
International Nuclear Information System (INIS)
Pedersen, N.F.; Soerensen, O.H.; Mygind, J.
1978-01-01
The microwave response at 9 GHz of Sn-O-Sn tunnel-junction current biased at zero dc voltage has been measured just below the critical temperature T/sub c/ of the Sn films. The temperature dependence of the cosphi conductance is determined from the resonant response at the junction plasma frequency f/sub p/ as the temperature is decreased from T/sub c/. We used three different schemes for observation of the plasma oscillations: (a) second-harmonic generation (excitation at approx. 4.5 GHz, f/sub p/ approx. 4.5 GHz); (b) mixing (excitations at approx. 9 and approx. 18 GHz, f/sub p/ approx. 9 GHz); (c) parametric half-harmonic oscillation (excitation at approx. 18 GHz, f/sub p/ approx. 9 GHz). Measurements were possible in two temperature intervals; 0.994 or = T/T/sub c/ > or = 0.930, with the result that as the temperature was decreased the cosphi amplitude first increased from about zero to positive values and then at lower temperatures decreased approaching -1 at the lowest temperatures of the experiment
Two-Element Tapered Slot Antenna Array for Terahertz Resonant Tunneling Diode Oscillators
Directory of Open Access Journals (Sweden)
Jianxiong Li
2014-01-01
Full Text Available Two-element tapered slot antenna (TSA array for terahertz (THz resonant tunneling diode (RTD oscillators is proposed in this paper. The proposed TSA array has the advantages of both the high directivity and high gain at the horizontal direction and hence can facilitate the horizontal communication between the RTD oscillators and other integrated circuit chips. A MIM (metal-insulator-metal stub with a T-shaped slot is used to reduce the mutual coupling between the TSA elements. The validity and feasibility of the proposed TSA array have been simulated and analyzed by the ANSYS/ANSOFT’s High Frequency Structure Simulator (HFSS. Detailed modeling approaches and theoretical analysis of the proposed TSA array have been fully addressed. The simulation results show that the mutual coupling between the TSA elements is reduced below −40 dB. Furthermore, at 500 GHz, the directivity, the gain, and the half power beam width (HPBW at the E-plane of the proposed TSA array are 12.18 dB, 13.09 dB, and 61°, respectively. The proposed analytical method and achieved performance are very promising for the antenna array integrated with the RTD oscillators at the THz frequency and could pave the way to the design of the THz antenna array for the RTD oscillators.
Energy Technology Data Exchange (ETDEWEB)
Liu, C.; Boyko, Y.; Geppert, C. C.; Christie, K. D.; Stecklein, G.; Crowell, P. A., E-mail: crowell@physics.umn.edu [School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Patel, S. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Palmstrøm, C. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
2014-11-24
We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.
A theoretical study of resonant tunneling characteristics in triangular double-barrier diodes
International Nuclear Information System (INIS)
Wang Hongmei; Xu Huaizhe; Zhang Yafei
2006-01-01
Resonant tunneling characteristics of triangular double-barrier diodes have been investigated systematically in this Letter, using Airy function approach to solve time-independent Schroedinger function in triangular double-barrier structures. Originally, the exact analytic expressions of quasi-bound levels and quasi-level lifetime in symmetrical triangular double-barrier structures have been derived within the effective-mass approximation as a function of structure parameters including well width, slope width and barrier height. Based on our derived analytic expressions, numerical results show that quasi-bound levels and quasi-level lifetime vary nearly linearly with the structure parameters except that the second quasi-level lifetime changes parabolically with slope width. Furthermore, according to our improved transmission coefficient of triangular double-barrier structures under external electric field, the current densities of triangular double-barrier diodes with different slope width at 0 K have been calculated numerically. The results show that the N-shaped negative differential resistance behaviors have been observed in current-voltage characteristics and current-voltage characteristics depend on the slope width
Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Shi, Yumeng; Li, Lain-Jong; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L; Lan, Yann-Wen
2017-11-28
High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe 2 -MoS 2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.
A Simplified Analytical Technique for High Frequency Characterization of Resonant Tunneling Diode
Directory of Open Access Journals (Sweden)
DESSOUKI, A. A. S.
2014-11-01
Full Text Available his paper proposes a simplified analytical technique for high frequency characterization of the resonant tunneling diode (RTD. An equivalent circuit of the RTD that consists of a parallel combination of conductance, G (V, f, and capacitance, C (V, f is formulated. The proposed approach uses the measured DC current versus voltage characteristic of the RTD to extract the equivalent circuit elements parameters in the entire bias range. Using the proposed analytical technique, the frequency response - including the high frequency range - of many characteristic aspects of the RTD is investigated. Also, the maximum oscillation frequency of the RTD is calculated. The results obtained have been compared with those concluded and reported in the literature. The reported results in literature were obtained through simulation of the RTD at high frequency using either a computationally complicated quantum simulator or through difficult RF measurements. A similar pattern of results and highly concordant conclusion are obtained. The proposed analytical technique is simple, correct, and appropriate to investigate the behavior of the RTD at high frequency. In addition, the proposed technique can be easily incorporated into SPICE program to simulate circuits containing RTD.
International Nuclear Information System (INIS)
Kapaev, V. V.; Kopaev, Yu. V.; Savinov, S. A.; Murzin, V. N.
2013-01-01
The characteristics of the high-frequency response of single- and double-well resonant tunneling structures in a dc electric field are investigated on the basis of the numerical solution of a time-dependent Schrödinger equation with open boundary conditions. The frequency dependence of the real part of high frequency conductivity (high-frequency response) in In 0.53 Ga 0.47 As/AlAs/InP structures is analyzed in detail for various values of the dc voltage V dc in the negative differential resistance (NDR) region. It is shown that double-well three-barrier structures are promising for the design of terahertz-band oscillators. The presence of two resonant states with close energies in such structures leads to a resonant (in frequency) response whose frequency is determined by the energy difference between these levels and can be controlled by varying the parameters of the structure. It is shown that, in principle, such structures admit narrow-band amplification, tuning of the amplification frequency, and a fine control of the amplification (oscillation) frequency in a wide range of terahertz frequencies by varying a dc electric voltage applied to the structure. Starting from a certain width of the central intermediate barrier in double-well structures, one can observe a collapse of resonances, where the structure behaves like a single-well system. This phenomenon imposes a lower limit on the oscillation frequency in three-barrier resonant tunneling structures.
International Nuclear Information System (INIS)
Ren Cheng; Cheng Li-Feng; Kang Feng; Gan Lin; Zhang Dao-Zhong; Li Zhi-Yuan
2012-01-01
We have designed and fabricated two types of two-port resonant tunneling filters with a triangular air-hole lattice in two-dimensional photonic crystal slabs. In order to improve the filtering efficiency, a feedback method is introduced by closing the waveguide. It is found that the relative position between the closed waveguide boundary and the resonator has an important impact on the dropping efficiency. Based on our analyses, two different types of filters are designed. The transmission spectra and scattering-light far-field patterns are measured, which agree well with theoretical prediction. In addition, the resonant filters are highly sensitive to the size of the resonant cavities, which are useful for practical applications
Spin-dependent dwell time through ferromagnetic graphene barrier
International Nuclear Information System (INIS)
Sattari, F.
2014-01-01
We investigated the dwell time of electrons tunneling through a ferromagnetic (FM) graphene barrier. The results show that the spin polarization can be efficiently controlled by the barrier width, barrier height, and the incident electron energy. Furthermore, it is found that electrons with different spin orientations will spend different times through the barrier. The difference of the dwell time between spin-up and spin-down electrons arises from the exchange splitting, which is induced by the FM strip. Study results indicate that a ferromagnetic graphene barrier can cause a nature spin filter mechanism in the time domain
International Nuclear Information System (INIS)
Ikeda, Jun
2003-01-01
The etiology of idiopathic carpal tunnel syndrome has not been clarified. A cross sectional area of carpal tunnel, flexor tendons, median nerve, and thickness of transverse carpal ligament were evaluated by MRI. Twenty-six patients who were electrophysiologically diagnosed with idiopathic carpal tunnel syndrome were tested by MRI. All patients were females; the mean age was sixty-four years old. The cross sectional area of carpal tunnel, the median nerve area, the area of the flexor tendons and its synovium in carpal tunnel, and thickness of the transverse carpal ligament were calculated. The following are of a seuere type carpal tunnel syndrome: Mean area of the flexor tendons and its synovium in carpal tunnel, 110.5±25.5 mm 2 (control group; 79.3±13.8 mm 2 ); ratio of flexor tendons and its synovium area to carpal tunnel area, 51.6±8.8% (control; 40.5±2.3%); and thickness of the transverse carpal ligament, 3.3±0.4 mm (control; 2.4±0.4 mm). These mean areas in severe carpal tunnel syndrome were significantly greater than those in mild type (p<0.05 or p<0.01). From the viewpoint of this result, it is possible that tenosynovitis is strongly to the etiology of idiopathic carpal tunnel syndrome. In other words, synovium edema causes chronic high pressure environment in carpal tunnel. Moreover, we classified these MRI findings into the following subgroups: enlargement of cross sectional area of flexor tendon and its synovia (n=8; 25.8%), thickened transverse carpal ligament (n=11; 35.5%), and combined type (n=7; 22.6%). This classification by MRI imaging was related to a clinical course and electro-physiologic severity. The present study suggests that to evaluate the cross sectional, area of an MRI image is useful for diagnosis and cure of idiopathic carpal tunnel syndrome. (author)
Tondra, Mark; Nordman, Catherine A.; Lange, Erik H.; Reed, Daniel; Jander, Albrect; Akou, Seraphin; Daughton, James
2001-09-01
Micro Unattended Ground Sensor Networks will likely employ magnetic sensors, primarily for discrimination of objects as opposed to initial detection. These magnetic sensors, then, must fit within very small cost, size, and power budgets to be compatible with the envisioned sensor suites. Also, a high degree of sensitivity is required to minimize the number of sensor cells required to survey a given area in the field. Solid state magnetoresistive sensors, with their low cost, small size, and ease of integration, are excellent candidates for these applications assuming that their power and sensitivity performance are acceptable. SDT devices have been fabricated into prototype magnetic field sensors suitable for use in micro unattended ground sensor networks. They are housed in tiny SOIC 8-pin packages and mounted on a circuit board with required voltage regulation, signal amplification and conditioning, and sensor control and communications functions. The best sensitivity results to date are 289 pT/rt. Hz at 1 Hz, and and 7 pT/rt. Hz at f > 10 kHz. Expected near term improvements in performance would bring these levels to approximately 10 pT/rt Hz at 1 Hz and approximately 1 pT/rt. Hz at > 1 kHz.
DEFF Research Database (Denmark)
Chi, Qijin; Farver, O; Ulstrup, Jens
2005-01-01
on the redox potential. Maximum resonance appears around the equilibrium redox potential of azurin with an on/off current ratio of approximate to 9. Simulation analyses, based on a two-step interfacial ET model for the scanning tunneling microscopy redox process, were performed and provide quantitative......A biomimetic long-range electron transfer (ET) system consisting of the blue copper protein azurin, a tunneling barrier bridge, and a gold single-crystal electrode was designed on the basis of molecular wiring self-assembly principles. This system is sufficiently stable and sensitive in a quasi...... constants display tunneling features with distance-decay factors of 0.83 and 0.91 angstrom(-1) in H2O and D2O, respectively. Redox-gated tunneling resonance is observed in situ at the single-molecule level by using electrochemical scanning tunneling microscopy, exhibiting an asymmetric dependence...
Energy Technology Data Exchange (ETDEWEB)
Grishakov, K. S., E-mail: ksgrishakov@yahoo.com; Elesin, V. F. [National Research Nuclear University “MEPhI” (Russian Federation)
2016-08-15
A numerical solution to the problem of transient processes in a resonant tunneling diode featuring a current–voltage characteristic with hysteresis is found for the first time in the context of a coherent model (based on the coupled Schrödinger and Poisson equations) taking into account the Fermi distribution of electrons. The transitions from the high-current to the low-current state and vice versa, which result from the existence of hysteresis and are of great practical importance for ultrafast switches based on resonant tunneling diodes, are studied in detail. It is shown that the transition times for such processes initiated by the application of a small voltage can significantly exceed the characteristic time ℏ/Γ (where G is the width of the resonance level). It is established for the first time that the transition time can be reduced and made as short as the characteristic time ℏ/Γ by applying a sufficiently high voltage. For the parameters of the resonant-tunnelingdiode structure considered in this study, the required voltage is about 0.01 V.
Karavosov, R. K.; Prozorov, A. G.
2012-01-01
We have investigated the spectra of pressure pulsations in the near field of the open working section of the wind tunnel with a vortex flow behind the tunnel blower formed like the flow behind the hydroturbine of a hydraulic power plant. We have made a comparison between the measurement data for pressure pulsations and the air stream velocity in tunnels of the above type and in tunnels in which a large-scale vortex structure behind the blower is not formed. It has been established that the large-scale vortex formation in the incompressible medium behind the blade system in the wind tunnel is a source of narrow-band acoustic radiation capable of exciting resonance self-oscillations in the tunnel channel.
Spin-dependent relativistic effect on heavy quarkonium properties in medium
International Nuclear Information System (INIS)
Dong Yubing
1997-01-01
Spin-dependent relativistic effect on the binding and dissociation of the heavy quarkonium in a thermal environment is investigated. The result shows that the interactions could influence the heavy quarkonium properties in medium
A nonperturbative treatment of spin-dependent interactions of light and heavy quarkonia
International Nuclear Information System (INIS)
Schoeberl, F.
1986-01-01
We propose a nonrelativistic potential model with a regularized Coulomb potential at short range which leads to spin-dependent interactions which are at most as singular as 1/r. The Schroedinger equation is solved numerically including all spin-dependent interactions nonperturbatively. The predicted spectrum of light and heavy quarkonia is in remarkable agreement with experiment. Even the leptonic decay widths as well as the M1 transitions are in agreement with experiment. (Author)
Measurement of the spin dependent structure functions of proton and neutron
International Nuclear Information System (INIS)
Rith, K.
1989-01-01
Recent results from the EMC experiment on the spin dependent structure function g 1 p (x) of the proton are discussed. They suggest that the nucleon spin does not originate from quark spins but rather from angular orbital momentum and gluon contributions. A proposed experiment at HERA is presented which will allow a very accurate measurement of the spin dependent structure functions and their integrals of both proton and neutron and a precise test of the Bjorken sum rule. (orig.)
Energy Technology Data Exchange (ETDEWEB)
Ke, Yougang; Liu, Yachao; He, Yongli; Zhou, Junxiao; Luo, Hailu, E-mail: hailuluo@hnu.edu.cn; Wen, Shuangchun [Laboratory for Spin Photonics, School of Physics and Electronics, Hunan University, Changsha 410082 (China)
2015-07-27
We report the realization of spin-dependent splitting with arbitrary intensity patterns based on all-dielectric metasurfaces. Compared with the plasmonic metasurfaces, the all-dielectric metasurface exhibits more high transmission efficiency and conversion efficiency, which makes it possible to achieve the spin-dependent splitting with arbitrary intensity patterns. Our findings suggest a way for generation and manipulation of spin photons, and thereby offer the possibility of developing spin-based nanophotonic applications.
Tebbutt, J. A.; Vahdati, M.; Carolan, D.; Dear, J. P.
2017-07-01
Previous research has proposed that an array of Helmholtz resonators may be an effective method for suppressing the propagation of pressure and sound waves, generated by a high-speed train entering and moving in a tunnel. The array can be used to counteract environmental noise from tunnel portals and also the emergence of a shock wave in the tunnel. The implementation of an array of Helmholtz resonators in current and future high-speed train-tunnel systems is studied. Wave propagation in the tunnel is modelled using a quasi-one-dimensional formulation, accounting for non-linear effects, wall friction and the diffusivity of sound. A multi-objective genetic algorithm is then used to optimise the design of the array, subject to the geometric constraints of a demonstrative tunnel system and the incident wavefront in order to attenuate the propagation of pressure waves. It is shown that an array of Helmholtz resonators can be an effective countermeasure for various tunnel lengths. In addition, the array can be designed to function effectively over a wide operating envelope, ensuring it will still function effectively as train speeds increase into the future.
International Nuclear Information System (INIS)
Xi, L.; Du, J.H.; Ma, J.H.; Wang, Z.; Zuo, Y.L.; Xue, D.S.
2013-01-01
Highlights: ► Spin-dependent transport property of LSMO/oleic acid nanoparticles is investigated. ► Transport properties and MR measured by Cu/nanoparticle assembly/elargol device. ► Non-linear I–V curve indicates a tunneling type transport properties. ► Tunnel barrier height around 1.3 ± 0.15 eV was obtained by fitting I–V curves. ► LFMR of LSMO/oleic acid molecules value reaches −18% with current of 0.1 μA at 10 K. - Abstract: Spin-dependent transport property through molecules is investigated using a monolayer of oleic acid molecule self-assembled half metallic La 0.7 Sr 0.3 MnO 3 (LSMO) nanoparticles, which was synthesized using a coprecipitation method. Fourier transform infrared spectroscopy was used to confirm that one-monolayer oleic acid molecules chemically bond to the LSMO nanoparticles. The transport properties and magnetoresistance (MR) effect of the oleic acid molecule coated LSMO nanoparticles were measured by a direct current four probes method using a Cu/nanoparticle assembly/elargol electrode sandwich device with various temperatures and bias voltages. The non-linear I–V curve indicates a tunneling type transport properties. The tunnel barrier height around 1.3 ± 0.15 eV was obtained by fitting the I–V curve according to the Simmons equation. The magnetoresistance curves can be divided to high-field MR and low-field MR (LFMR) parts. The former is ascribed to the influence of spin disorder or canting within the LSMO nanoparticle surface and the latter one with strong bias dependence is attributed to the spin-dependent tunneling effect through the insulating surface layer of LSMO and oleic acid molecules. The enhanced LFMR effect for oleic acid coated LSMO with respect to the bare LSMO was attributed to the enhanced tunneling transport and weak spin scattering in oleic acid molecule barrier.
International Nuclear Information System (INIS)
Klofai, Yerima; Essimbi, B Z; Jaeger, D
2011-01-01
Pulse propagation on high-frequency dissipative nonlinear transmission lines (NLTLs)/resonant tunneling diode line cascaded maps is investigated for long-distance propagation of short pulses. Applying perturbative analysis, we show that the dynamics of each line is reduced to an expanded Korteweg-de Vries-Burgers equation. Moreover, it is found by computer experiments that the soliton developed in NLTLs experiences an exponential amplitude decay on the one hand and an exponential amplitude growth on the other. As a result, the behavior of a pulse in special electrical networks made of concatenated pieces of lines is closely similar to the transmission of information in optical/electrical communication systems.
Energy Technology Data Exchange (ETDEWEB)
Girón-Sedas, J. A. [Departamento de Física, Universidad del Valle, AA 25360, Cali (Colombia); Centro de Investigación e Innovación en Bioinformática y Fotónica - CIBioFI, AA 25360 Cali (Colombia); Mejía-Salazar, J. R., E-mail: jrmejia3146@gmail.com [Instituto de Física de São Carlos, Universidade de São Paulo, CP 369, 13560-970 São Carlos, SP (Brazil); Moncada-Villa, E.; Porras-Montenegro, N. [Departamento de Física, Universidad del Valle, AA 25360, Cali (Colombia)
2016-07-18
We propose a way to enhance the transverse magneto-optical Kerr effect, by the excitation of resonant tunneling modes, in subwavelength trilayer structures featuring a dielectric slab sandwiched between two magneto-optical metallic layers. Depending on the magneto-optical layer widths, the proposed system may exhibit an extraordinary transverse magneto-optical Kerr effect, which makes it very attractive for the design and engineering of thin-film magneto-optical-based devices for future photonic circuits or fiber optical-communication systems.
International Nuclear Information System (INIS)
Adrian, H.
1981-01-01
The influence of crystal defects on the phonon spectra was studied for fcc lead using superconducting tunneling spectroscopy. The theory predicts low frequency modes for the vibrational states of interstitials in (100) dumbbell configuration. Low temperature irradiation of superconducting point contacts with fast ions (point contact thickness small compared to the average ion range) showed radiation-induced structures in the low-energy part of the Eliashberg function for lead. These resonant modes are reduced by annealing at 18.5 K; they are attributed to small interstitial clusters. The radiation-induced structures are completely removed by room temperature annealing. (orig.)
Energy Technology Data Exchange (ETDEWEB)
Klofai, Yerima [Department of Physics, Higher Teacher Training College, University of Maroua, PO Box 46 Maroua (Cameroon); Essimbi, B Z [Department of Physics, Faculty of Science, University of Yaounde 1, PO Box 812 Yaounde (Cameroon); Jaeger, D, E-mail: bessimb@yahoo.fr [ZHO, Optoelectronik, Universitaet Duisburg-Essen, D-47048 Duisburg (Germany)
2011-10-15
Pulse propagation on high-frequency dissipative nonlinear transmission lines (NLTLs)/resonant tunneling diode line cascaded maps is investigated for long-distance propagation of short pulses. Applying perturbative analysis, we show that the dynamics of each line is reduced to an expanded Korteweg-de Vries-Burgers equation. Moreover, it is found by computer experiments that the soliton developed in NLTLs experiences an exponential amplitude decay on the one hand and an exponential amplitude growth on the other. As a result, the behavior of a pulse in special electrical networks made of concatenated pieces of lines is closely similar to the transmission of information in optical/electrical communication systems.
Nano-structured Fabry–Pérot resonators in neutron optics and tunneling of neutron wave-particles
International Nuclear Information System (INIS)
Maaza, M.; Hamidi, D.
2012-01-01
Correlated to the quantum mechanics wave-particle duality, the optical analogy between electromagnetic waves and cold neutrons manifests itself through several interference phenomena particularly the so called Frustrated Total Reflection i.e., the tunneling process in Fabry–Pérot nano-structured cavities. Prominent resonant situations offered by this configuration allow the attainment of numerous fundamental investigations and surface-interface studies as well as to devise new kinds of neutron optics devices. This review contribution reports such possibilities in addition to the recently observed peculiar Goos–Hänchen longitudinal shift of neutron wave-particles which was predicted by Sir Isaac Newton as early as 1730.
Directory of Open Access Journals (Sweden)
Jun He
2012-03-01
Full Text Available By means of the nonequilibrium Green's functions and the density functional theory, we have investigated the electronic transport properties of C60 based electronic device with different intermolecular interactions. It is found that the electronic transport properties vary with the types of the interaction between two C60 molecules. A fast electrical switching behavior based on negative differential resistance has been found when two molecules are coupled by the weak π − π interaction. Compared to the solid bonding, the weak interaction is found to induce resonant tunneling, which is responsible for the fast response to the applied electric field and hence the velocity of switching.
Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes
Energy Technology Data Exchange (ETDEWEB)
Chen, Haoran; Yang, Lin' an, E-mail: layang@xidian.edu.cn; Hao, Yue [State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)
2014-08-21
The resonant tunneling mechanism of the GaN based resonant tunneling diode (RTD) with an InGaN sub-quantum-well has been investigated by means of numerical simulation. At resonant-state, Electrons in the InGaN/InAlN/GaN/InAlN RTD tunnel from the emitter region through the aligned discrete energy levels in the InGaN sub-quantum-well and GaN main-quantum-well into the collector region. The implantation of the InGaN sub-quantum-well alters the dominant transport mechanism, increase the transmission coefficient and give rise to the peak current and peak-to-valley current ratio. We also demonstrate that the most pronounced negative-differential-resistance characteristic can be achieved by choosing appropriately the In composition of In{sub x}Ga{sub 1−x}N at around x = 0.06.
Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes
International Nuclear Information System (INIS)
Chen, Haoran; Yang, Lin'an; Hao, Yue
2014-01-01
The resonant tunneling mechanism of the GaN based resonant tunneling diode (RTD) with an InGaN sub-quantum-well has been investigated by means of numerical simulation. At resonant-state, Electrons in the InGaN/InAlN/GaN/InAlN RTD tunnel from the emitter region through the aligned discrete energy levels in the InGaN sub-quantum-well and GaN main-quantum-well into the collector region. The implantation of the InGaN sub-quantum-well alters the dominant transport mechanism, increase the transmission coefficient and give rise to the peak current and peak-to-valley current ratio. We also demonstrate that the most pronounced negative-differential-resistance characteristic can be achieved by choosing appropriately the In composition of In x Ga 1−x N at around x = 0.06
Cansever, H.; Narkowicz, R.; Lenz, K.; Fowley, C.; Ramasubramanian, L.; Yildirim, O.; Niesen, A.; Huebner, T.; Reiss, G.; Lindner, J.; Fassbender, J.; Deac, A. M.
2018-06-01
Similar to electrical currents flowing through magnetic multilayers, thermal gradients applied across the barrier of a magnetic tunnel junction may induce pure spin-currents and generate ‘thermal’ spin-transfer torques large enough to induce magnetization dynamics in the free layer. In this study, we describe a novel experimental approach to observe spin-transfer torques induced by thermal gradients in magnetic multilayers by studying their ferromagnetic resonance response in microwave cavities. Utilizing this approach allows for measuring the magnetization dynamics on micron/nano-sized samples in open-circuit conditions, i.e. without the need of electrical contacts. We performed first experiments on magnetic tunnel junctions patterned into 6 × 9 µm2 ellipses from Co2FeAl/MgO/CoFeB stacks. We conducted microresonator ferromagnetic resonance (FMR) under focused laser illumination to induce thermal gradients in the layer stack and compared them to measurements in which the sample was globally heated from the backside of the substrate. Moreover, we carried out broadband FMR measurements under global heating conditions on the same extended films the microstructures were later on prepared from. The results clearly demonstrate the effect of thermal spin-torque on the FMR response and thus show that the microresonator approach is well suited to investigate thermal spin-transfer-driven processes for small temperatures gradients, far below the gradients required for magnetic switching.
Limits on Spin-Dependent WIMP-Nucleon Cross Section Obtained from the Complete LUX Exposure
Akerib, D. S.; Alsum, S.; Araújo, H. M.; Bai, X.; Bailey, A. J.; Balajthy, J.; Beltrame, P.; Bernard, E. P.; Bernstein, A.; Biesiadzinski, T. P.; Boulton, E. M.; Brás, P.; Byram, D.; Cahn, S. B.; Carmona-Benitez, M. C.; Chan, C.; Chiller, A. A.; Chiller, C.; Currie, A.; Cutter, J. E.; Davison, T. J. R.; Dobi, A.; Dobson, J. E. Y.; Druszkiewicz, E.; Edwards, B. N.; Faham, C. H.; Fallon, S. R.; Fiorucci, S.; Gaitskell, R. J.; Gehman, V. M.; Ghag, C.; Gilchriese, M. G. D.; Hall, C. R.; Hanhardt, M.; Haselschwardt, S. J.; Hertel, S. A.; Hogan, D. P.; Horn, M.; Huang, D. Q.; Ignarra, C. M.; Jacobsen, R. G.; Ji, W.; Kamdin, K.; Kazkaz, K.; Khaitan, D.; Knoche, R.; Larsen, N. A.; Lee, C.; Lenardo, B. G.; Lesko, K. T.; Lindote, A.; Lopes, M. I.; Manalaysay, A.; Mannino, R. L.; Marzioni, M. F.; McKinsey, D. N.; Mei, D.-M.; Mock, J.; Moongweluwan, M.; Morad, J. A.; Murphy, A. St. J.; Nehrkorn, C.; Nelson, H. N.; Neves, F.; O'Sullivan, K.; Oliver-Mallory, K. C.; Palladino, K. J.; Pease, E. K.; Reichhart, L.; Rhyne, C.; Shaw, S.; Shutt, T. A.; Silva, C.; Solmaz, M.; Solovov, V. N.; Sorensen, P.; Stephenson, S.; Sumner, T. J.; Szydagis, M.; Taylor, D. J.; Taylor, W. C.; Tennyson, B. P.; Terman, P. A.; Tiedt, D. R.; To, W. H.; Tripathi, M.; Tvrznikova, L.; Uvarov, S.; Velan, V.; Verbus, J. R.; Webb, R. C.; White, J. T.; Whitis, T. J.; Witherell, M. S.; Wolfs, F. L. H.; Xu, J.; Yazdani, K.; Young, S. K.; Zhang, C.; LUX Collaboration
2017-06-01
We present experimental constraints on the spin-dependent WIMP-nucleon elastic cross sections from the total 129.5 kg yr exposure acquired by the Large Underground Xenon experiment (LUX), operating at the Sanford Underground Research Facility in Lead, South Dakota (USA). A profile likelihood ratio analysis allows 90% C.L. upper limits to be set on the WIMP-neutron (WIMP-proton) cross section of σn=1.6 ×10-41 cm2 (σp=5 ×10-40 cm2 ) at 35 GeV c-2 , almost a sixfold improvement over the previous LUX spin-dependent results. The spin-dependent WIMP-neutron limit is the most sensitive constraint to date.
Determining the spin dependent mean free path in Co90Fe10 using giant magnetoresistance
Shakespear, K. F.; Perdue, K. L.; Moyerman, S. M.; Checkelsky, J. G.; Harberger, S. S.; Tamboli, A. C.; Carey, M. J.; Sparks, P. D.; Eckert, J. C.
2005-05-01
The spin dependent mean free path in Co90Fe10 is determined as a function of temperature down to 5K using two different spin valve structures. At 5K the spin dependent mean free path for one structure was measured to be 9.4±1.4nm, decreasing by a factor of 3 by 350K. For the other structure, it is 7.5±0.5nm at 5K and decreased by a factor of 1.5 by 350K. In both cases, the spin dependent mean free path approaches the typical thickness of ferromagnetic layers in spin valves at room temperature and, thus, has an impact on the choice of design parameters for the development of new spintronic devices.
Charge symmetry breaking in spin dependent parton distributions and the Bjorken sum rule
International Nuclear Information System (INIS)
Cloet, I.C.; Horsley, R.; Londergan, J.T.
2012-04-01
We present the rst determination of charge symmetry violation (CSV) in the spin-dependent parton distribution functions of the nucleon. This is done by determining the rst two Mellin moments of the spin-dependent parton distribution functions of the octet baryons from N f =2+1 lattice simulations. The results are compared with predictions from quark models of nucleon structure. We discuss the contribution of partonic spin CSV to the Bjorken sum rule, which is important because the CSV contributions represent the only partonic corrections to the Bjorken sum rule.
Charge symmetry breaking in spin dependent parton distributions and the Bjorken sum rule
Energy Technology Data Exchange (ETDEWEB)
Cloet, I.C. [Adelaide Univ, SA (Australia). CSSM, School of Chemistry and Physics; Horsley, R. [Edinburgh Univ. (United Kingdom). School of Physics and Astronomy; Londergan, J.T. [Indiana Univ., Bloomington, IN (US). Dept. of Physics and Center for Exploration of Energy and Matter] (and others)
2012-04-15
We present the rst determination of charge symmetry violation (CSV) in the spin-dependent parton distribution functions of the nucleon. This is done by determining the rst two Mellin moments of the spin-dependent parton distribution functions of the octet baryons from N{sub f}=2+1 lattice simulations. The results are compared with predictions from quark models of nucleon structure. We discuss the contribution of partonic spin CSV to the Bjorken sum rule, which is important because the CSV contributions represent the only partonic corrections to the Bjorken sum rule.
Resonant coherent quantum tunneling of the magnetization of spin-½ systems : Spin-parity effects
García-Pablos, D.; García, N.; Raedt, H. De
1997-01-01
We perform quantum dynamical calculations to study the reversal of the magnetization for systems of a few spin-½ particles with a general biaxial anisotropy in the presence of an external magnetic field at T=0 and with no dissipation. Collective quantum tunneling of the magnetization is demonstrated
International Nuclear Information System (INIS)
Chen, D. Y.; Sun, Y.; He, Y. J.; Xu, L.; Xu, J.
2014-01-01
We have investigated carrier transport in SiO 2 /nc-Si/SiO 2 multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V 2 ) as a function of 1/V and ln(I) as a function of V 1/2 . Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages
Spin-dependent Seebeck coefficients of Ni80Fe20 and Co in nanopillar spin valves
Dejene, F. K.; Flipse, J.; van Wees, B. J.
2012-01-01
We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni80Fe20) and cobalt (Co) using nanopillar spin valve devices, a stack of two ferromagnetic layers separated by a nonmagnetic layer. The devices were specifically designed to separate heat-related effects from
Nanoscale spin-dependent transport of electrons and holes in Si-ferromagnet structures
Ul Haq, E.
Given the rapid development of magnetic data storage and spin-electronics into the realm of nanotechnology, the understanding of the spin-dependent electronic transport and switching behavior of magnetic structures at the nanoscale is an important issue. We have developed spin-sensitive techniques
Nuclear-spin-dependent parity-nonconserving effects in thallium, lead and bismuth atoms
International Nuclear Information System (INIS)
Khriplovich, I.B.
1994-01-01
Nuclear-spin-dependent P-odd optical activity in atomic Tl, Pb and Bi is calculated. Its magnitude is expressed analytically through the main contribution to the optical rotation, which is independent of nuclear spin. The accuracy of results is discussed. 31 refs., 2 tabs
Effects of polarization field on vertical transport in GaN/AlGaN resonant tunneling diodes
International Nuclear Information System (INIS)
Park, Seoung-Hwan; Shim, Jong-In
2012-01-01
Polarization-field effects on the vertical transport in GaN/AlGaN resonant tunneling diodes (RTDs) were theoretically investigated by using the transfer matrix formalism. The self-consistent model shows that the resonant peaks are shifted toward higher energies with increasing Al composition in the AlGaN barrier, and the transmission probability values are shown to decrease rapidly. In the case of the flat-band model, on the other hand, the shift of the resonant peaks is smaller than it is for the self-consistent model and the variation of transmission probability values with increasing Al composition is relatively smaller than that of the self-consistent model. The current voltage characteristics of the self-consistent model are asymmetric while those of the flat-band model are symmetric for positive and negative current directions. The peak-to-valley ratio (PVR) of the self-consistent model is shown to be slightly smaller than that of the flat-band model for Al = 0.3.
Energy Technology Data Exchange (ETDEWEB)
Vexler, M. I., E-mail: vexler@mail.ioffe.ru; Illarionov, Yu. Yu.; Grekhov, I. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
2017-04-15
The prerequisites for electron storage in the quantum well of a metal–oxide–p{sup +}-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO{sub 2}, HfO{sub 2}, and TiO{sub 2} insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) × 10{sup 18} to (2–3) × 10{sup 19} cm{sup –3} in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in the structures with SiO{sub 2}/p{sup +}-Si(10{sup 19} cm{sup –3}) should exceed ~3 nm. The electron density in the well can reach ~10{sup 12} cm{sup –2} and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.
Energy Technology Data Exchange (ETDEWEB)
Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)
1995-12-31
We report the first observation of resonant tunneling through a CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author). 16 refs, 2 figs.
Ogino, Kota; Suzuki, Safumi; Asada, Masahiro
2017-12-01
Spectral narrowing of a resonant-tunneling-diode (RTD) terahertz oscillator, which is useful for various applications of terahertz frequency range, such as an accurate gas spectroscopy, a frequency reference in various communication systems, etc., was achieved with a phase-locked loop system. The oscillator is composed of an RTD, a slot antenna, and a varactor diode for electrical frequency tuning. The output of the RTD oscillating at 610 GHz was down-converted to 400 MHz by a heterodyne detection. The phase noise was transformed to amplitude noise by a balanced mixer and fed back into the varactor diode. The loop filter for a stable operation is discussed. The spectral linewidth of 18.6 MHz in free-running operation was reduced to less than 1 Hz by the feedback.
Energy Technology Data Exchange (ETDEWEB)
Boucherit, M.; Soltani, A.; Rousseau, M.; Deresmes, D.; Berthe, M.; Durand, C.; De Jaeger, J.-C. [IEMN/UMR-CNRS 8520, Universite Lille1, PRES Universite Lille Nord de France (France); Monroy, E. [Equipe mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, DRFMC/SP2M/PSC, CEA-Grenoble (France)
2011-10-31
AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 {mu}m to 4 {mu}m. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential resistance (NDR) was detected in the forward bias at 120 K. The NDR was observed for the mesa size of 2 {mu}m at 4 V with a peak-to-valley current ratio of 3.5. The measurement conditions were chosen to make NDR reproducible more than 50 times and apparent in both scan voltage directions after electrical treatment.
Directory of Open Access Journals (Sweden)
M. Asada
2017-11-01
Full Text Available The temperature dependences of output power, oscillation frequency, and current-voltage curve are measured for resonant-tunneling-diode terahertz (THz oscillators. The output power largely changes with temperature owing to the change in Ohmic loss. In contrast to the output power, the oscillation frequency and current-voltage curve are almost insensitive to temperature. The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC as a fitting parameter assumed to be independent of temperature. Very good agreement was obtained between the measurement and calculation, and the NDC in the THz frequency region is estimated. The results show that the absolute values of NDC in the THz region significantly decrease relative to that at DC, and increases with increasing frequency in the measured frequency range.
Resonant Tunnelling in Barrier-in-Well and Well-in-Well Structures
International Nuclear Information System (INIS)
Jiang-Hong, Yao; Zhang-Yan; Wei-Wu, Li; Yong-Chun, Shu; Zhan-Guo, Wang; Jing-Jun, Xu; Guo-Zhi, Jia
2008-01-01
A Schrödinger equation is solved numerically for a barrier in a quantum well and a quantum well in another well structure by the transfer matrix technique. Effect of structure parameters on the transmission probabilities is investigated in detail. The results suggest that symmetry plays an important role in the coupling effect between the quantum wells. The relationship between the width of the inner well and the resonant energy levels in well-in-well structures is also studied. It is found that the ground state energy and the second resonant energy decrease with increasing width of the inner well, while the first resonant energy remains constant
Tunneling effects in resonant acoustic scattering of an air bubble in unbounded water
Directory of Open Access Journals (Sweden)
ANDRÉ G. SIMÃO
2016-06-01
Full Text Available Abstract The problem of acoustic scattering of a gaseous spherical bubble immersed within unbounded liquid surrounding is considered in this work. The theory of partial wave expansion related to this problem is revisited. A physical model based on the analogy between acoustic scattering and potential scattering in quantum mechanics is proposed to describe and interpret the acoustical natural oscillation modes of the bubble, namely, the resonances. In this context, a physical model is devised in order to describe the air water interface and the implications of the high density contrast on the various regimes of the scattering resonances. The main results are presented in terms of resonance lifetime periods and quality factors. The explicit numerical calculations are undertaken through an asymptotic analysis considering typical bubble dimensions and underwater sound wavelengths. It is shown that the resonance periods are scaled according to the Minnaert’s period, which is the short lived resonance mode, called breathing mode of the bubble. As expected, resonances with longer lifetimes lead to impressive cavity quality Q-factor ranging from 1010 to 105. The present theoretical findings lead to a better understanding of the energy storage mechanism in a bubbly medium.
Photon and spin dependence of the resonance line shape in the strong coupling regime
Miyashita, Seiji; Shirai, Tatsuhiko; Mori, Takashi; De Raedt, Hans; Bertaina, Sylvain; Chiorescu, Irinel
2012-01-01
We study the quantum dynamics of a spin ensemble coupled to cavity photons. Recently, related experimental results have been reported, showing the existence of the strong coupling regime in such systems. We study the eigenenergy distribution of the multi-spin system (following the Tavis-Cummings
International Nuclear Information System (INIS)
Parui, Subir; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger; Bedoya-Pinto, Amilcar; Sun, Xiangnan; Casanova, Fèlix; Hueso, Luis E.
2016-01-01
The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al 2 O 3 /NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.
Energy Technology Data Exchange (ETDEWEB)
Parui, Subir, E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu; Ribeiro, Mário; Atxabal, Ainhoa; Llopis, Roger [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Bedoya-Pinto, Amilcar [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); Max Planck Institute of Microstructure Physics, D-06120 Halle (Germany); Sun, Xiangnan [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); National Center for Nanoscience and Technology, 100190 Beijing (China); Casanova, Fèlix; Hueso, Luis E., E-mail: s.parui@nanogune.eu, E-mail: l.hueso@nanogune.eu [CIC nanoGUNE, 20018 Donostia-San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)
2016-08-01
The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of magnetic tunnel junctions (MTJs) crucial for exploring this regime. Here, we demonstrate a frequency-mediated effect in which the tunnel magnetoimpedance reverses its sign in a classical Co/Al{sub 2}O{sub 3}/NiFe MTJ, whereas we only observe a gradual decrease in the tunnel magnetophase. Such effects are explained by the capacitive coupling of a parallel resistor and capacitor in the equivalent circuit model of the MTJ. Furthermore, we report a positive tunnel magnetocapacitance effect, suggesting the presence of a spin-capacitance at the two ferromagnet/tunnel-barrier interfaces. Our results are important for understanding spin transport phenomena at the high frequency regime in which the spin-polarized charge accumulation due to spin-dependent penetration depth at the two interfaces plays a crucial role.
I-V characteristics of graphene nanoribbon/h-BN heterojunctions and resonant tunneling.
Wakai, Taiga; Sakamoto, Shoichi; Tomiya, Mitsuyoshi
2018-07-04
We present the first principle calculations of the electrical properties of graphene sheet/h-BN heterojunction (GS/h-BN) and 11-armchair graphene nanoribbon/h-BN heterojunction (11-AGNR/h-BN), which are carried out using the density functional theory (DFT) method and the non-equilibrium Green's function (NEGF) technique. Since 11-AGNR belongs to the conductive (3n-1)-family of AGNR, both are metallic nanomaterials with two transverse arrays of h-BN, which is a wide-gap semi-conductor. The two h-BN arrays act as double barriers. The transmission functions (TF) and I-[Formula: see text] characteristics of GS/h-BN and 11-AGNR/h-BN are calculated by DFT and NEGF, and they show that quantum double barrier tunneling occurs. The TF becomes very spiky in both materials, and it leads to step-wise I-[Formula: see text] characteristics rather than negative resistance, which is the typical behavior of double barriers in semiconductors. The results of our first principle calculations are also compared with 1D Dirac equation model for the double barrier system. The model explains most of the peaks of the transmission functions nearby the Fermi energy quite well. They are due to quantum tunneling.
International Nuclear Information System (INIS)
Dakhlaoui, H; Almansour, S
2016-01-01
In this work, the electronic properties of resonant tunneling diodes (RTDs) based on GaN-Al x Ga (1−x) N double barriers are investigated by using the non-equilibrium Green functions formalism (NEG). These materials each present a wide conduction band discontinuity and a strong internal piezoelectric field, which greatly affect the electronic transport properties. The electronic density, the transmission coefficient, and the current–voltage characteristics are computed with considering the spontaneous and piezoelectric polarizations. The influence of the quantum size on the transmission coefficient is analyzed by varying GaN quantum well thickness, Al x Ga (1−x) N width, and the aluminum concentration x Al . The results show that the transmission coefficient more strongly depends on the thickness of the quantum well than the barrier; it exhibits a series of resonant peaks and valleys as the quantum well width increases. In addition, it is found that the negative differential resistance (NDR) in the current–voltage ( I – V) characteristic strongly depends on aluminum concentration x Al . It is shown that the peak-to-valley ratio (PVR) increases with x Al value decreasing. These findings open the door for developing vertical transport nitrides-based ISB devices such as THz lasers and detectors. (paper)
Impact of hadronic and nuclear corrections on global analysis of spin-dependent parton distributions
Energy Technology Data Exchange (ETDEWEB)
Jimenez-Delgado, Pedro [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Accardi, Alberto [Hampton University, Hampton, VA (United States); Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Melnitchouk, Wally [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)
2014-02-01
We present the first results of a new global next-to-leading order analysis of spin-dependent parton distribution functions from the most recent world data on inclusive polarized deep-inelastic scattering, focusing in particular on the large-x and low-Q^2 regions. By directly fitting polarization asymmetries we eliminate biases introduced by using polarized structure function data extracted under nonuniform assumptions for the unpolarized structure functions. For analysis of the large-x data we implement nuclear smearing corrections for deuterium and 3He nuclei, and systematically include target mass and higher twist corrections to the g_1 and g_2 structure functions at low Q^2. We also explore the effects of Q^2 and W^2 cuts in the data sets, and the potential impact of future data on the behavior of the spin-dependent parton distributions at large x.
Static spin-dependent forces between heavy quarks in the classical approximation to dual QCD
International Nuclear Information System (INIS)
Baker, M.; Ball, J.S.; Zachariasen, F.
1991-01-01
We compute the static spin-dependent forces V S (R) (proportional to σ 1 ·σ 2 ) and V T (R) (proportional to 3σ 1 ·Rσ 2 ·R-σ 1 ·σ 2 ) between two quarks separated by R. This is done by treating the (weak) spin-dependent effects as a perturbation on the spin-independent potentials and fields computed earlier for dual QCD. What results is a definite prediction for the heavy-quark potentials which are similar to, but different in form from, those used in phenomenological treatments. Calculations of the masses and splittings of heavy-quark states using our potentials will provide a further test of the dual superconductor picture of QCD
Higher order spin-dependent terms in D0-brane scattering from the matrix model
International Nuclear Information System (INIS)
McArthur, I.N.
1998-01-01
The potential describing long-range interactions between D0-branes contains spin-dependent terms. In the matrix model, these should be reproduced by the one-loop effective action computed in the presence of a non-trivial fermionic background ψ. The v 3 ψ 2 /r 8 term in the effective action has been computed by Kraus and shown to correspond to a spin-orbit interaction between D0-branes, and the ψ 8 /r 11 term in the static potential has been obtained by Barrio et al. In this paper, the v 2 ψ 4 /r 9 term is computing in the matrix model and compared with the corresponding results of Morales et al. obtained using string theoretic methods. The technique employed is adapted to the underlying supersymmetry of the matrix model, and should be useful in the calculation of spin-dependent effects in more general Dp-brane scatterings. (orig.)
Realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect
Energy Technology Data Exchange (ETDEWEB)
Ling, Xiaohui [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Department of Physics and Electronic Information Science, Hengyang Normal University, Hengyang 421002 (China); Yi, Xunong [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Zhou, Xinxing; Liu, Yachao; Shu, Weixing; Wen, Shuangchun [Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China); Luo, Hailu, E-mail: hailuluo@hnu.edu.cn [SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Laboratory for spin photonics, College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China)
2014-10-13
We report the realization of tunable spin-dependent splitting in intrinsic photonic spin Hall effect. By breaking the rotational symmetry of a cylindrical vector beam, the intrinsic vortex phases that the two spin components of the vector beam carries, which is similar to the geometric Pancharatnam-Berry phase, are no longer continuous in the azimuthal direction, and leads to observation of spin accumulation at the opposite edge of the beam. Due to the inherent nature of the phase and independency of light-matter interaction, the observed photonic spin Hall effect is intrinsic. Modulating the topological charge of the vector beam, the spin-dependent splitting can be enhanced and the direction of spin accumulation is switchable. Our findings may provide a possible route for generation and manipulation of spin-polarized photons, and enables spin-based photonics applications.
International Nuclear Information System (INIS)
Jermakov, V.M.
1997-01-01
In the case of low transparency of barriers, tunneling of electrons through a double barrier system with account their Coulomb interaction in the inter barrier space (quantum well) is considered. The quantum state of the well is supposed to be triply degenerated. It was shown that the dependence of quantum well accupation on the applied bias has a step like character at low temperatures, and there is a threshold value in the region of small applied bias. These properties can be explained by splitting of states in the well due to the electron interaction. The considered system also has bistability properties. This is due to the possibility for electrons to occupy upper levels in the well while lower levels remain empty. Charge fluctuations in the well are also discussed
The spin-dependent neutralino-nucleus form factor for 127I
International Nuclear Information System (INIS)
Ressell, M.T.
1996-01-01
We present the results of detailed shell model calculations of the spin-dependent elastic form factor for the nucleus 127 I. the calculations were performed in extremely large model spaces which adequately describe the configuration mixing in this nucleus. Good agreement between the calculated and experimental values of the magnetic moment are found. Other nuclear observables are also compared to experiment. The dependence of the form factor upon the model space and effective interaction is discussed
Origin of spin-dependent asymmetries in electron transmission through ultrathin ferromagnetic films
International Nuclear Information System (INIS)
Gokhale, M.P.; Mills, D.L.
1991-01-01
We present theoretical calculations of exchange asymmetries in the transmission of electrons through ultrathin films of ferromagnetic Fe. The results account nicely for the magnitude of the asymmetries observed by Pappas et al. in photoemission studies of Cu covered by an ultrathin film of Fe. We argue that exchange asymmetry in the transmissivity of the Fe film, rather than the spin dependence of the electron mean free path, is responsible for the effects reported by these authors
Spin-dependent electron many-body effects in GaAs
Nemec, P.; Kerachian, Y.; van Driel, H. M.; Smirl, Arthur L.
2005-12-01
Time- and polarization-resolved differential transmission measurements employing same and oppositely circularly polarized 150fs optical pulses are used to investigate spin characteristics of conduction band electrons in bulk GaAs at 295K . Electrons and holes with densities in the 2×1016cm-3-1018cm-3 range are generated and probed with pulses whose center wavelength is between 865 and 775nm . The transmissivity results can be explained in terms of the spin sensitivity of both phase-space filling and many-body effects (band-gap renormalization and screening of the Coulomb enhancement factor). For excitation and probing at 865nm , just above the band-gap edge, the transmissivity changes mainly reflect spin-dependent phase-space filling which is dominated by the electron Fermi factors. However, for 775nm probing, the influence of many-body effects on the induced transmission change are comparable with those from reduced phase space filling, exposing the spin dependence of the many-body effects. If one does not take account of these spin-dependent effects one can misinterpret both the magnitude and time evolution of the electron spin polarization. For suitable measurements we find that the electron spin relaxation time is 130ps .
''Spin-dependent'' μ → e conversion on light nuclei
International Nuclear Information System (INIS)
Davidson, Sacha; Saporta, Albert; Kuno, Yoshitaka
2018-01-01
The experimental sensitivity to μ → e conversion will improve by four or more orders of magnitude in coming years, making it interesting to consider the ''spin-dependent'' (SD) contribution to the rate. This process does not benefit from the atomic-number-squared enhancement of the spin-independent (SI) contribution, but probes different operators. We give details of our recent estimate of the spin-dependent rate, expressed as a function of operator coefficients at the experimental scale. Then we explore the prospects for distinguishing coefficients or models by using different targets, both in an EFT perspective, where a geometric representation of different targets as vectors in coefficient space is introduced, and also in three leptoquark models. It is found that comparing the rate on isotopes with and without spin could allow one to detect spin-dependent coefficients that are at least a factor of few larger than the spin-independent ones. Distinguishing among the axial, tensor and pseudoscalar operators that induce the SD rate would require calculating the nuclear matrix elements for the second two. Comparing the SD rate on nuclei with an odd proton vs. odd neutron could allow one to distinguish operators involving u quarks from those involving d quarks; this is interesting because the distinction is difficult to make for SI operators. (orig.)
''Spin-dependent'' μ → e conversion on light nuclei
Energy Technology Data Exchange (ETDEWEB)
Davidson, Sacha; Saporta, Albert [IPNL, CNRS/IN2P3, Villeurbanne (France); Universite Claude Bernard Lyon 1, Villeurbanne (France); Universite de Lyon, Lyon (France); Kuno, Yoshitaka [Osaka University, Department of Physics, Toyonaka, Osaka (Japan)
2018-02-15
The experimental sensitivity to μ → e conversion will improve by four or more orders of magnitude in coming years, making it interesting to consider the ''spin-dependent'' (SD) contribution to the rate. This process does not benefit from the atomic-number-squared enhancement of the spin-independent (SI) contribution, but probes different operators. We give details of our recent estimate of the spin-dependent rate, expressed as a function of operator coefficients at the experimental scale. Then we explore the prospects for distinguishing coefficients or models by using different targets, both in an EFT perspective, where a geometric representation of different targets as vectors in coefficient space is introduced, and also in three leptoquark models. It is found that comparing the rate on isotopes with and without spin could allow one to detect spin-dependent coefficients that are at least a factor of few larger than the spin-independent ones. Distinguishing among the axial, tensor and pseudoscalar operators that induce the SD rate would require calculating the nuclear matrix elements for the second two. Comparing the SD rate on nuclei with an odd proton vs. odd neutron could allow one to distinguish operators involving u quarks from those involving d quarks; this is interesting because the distinction is difficult to make for SI operators. (orig.)
Josephson tunneling and nanosystems
Ovchinnikov, Yurii; Kresin, Vladimir
2010-01-01
Josephson tunneling between nanoclusters is analyzed. The discrete nature of the electronic energy spectra, including their shell ordering, is explicitly taken into account. The treatment considers the two distinct cases of resonant and non-resonant tunneling. It is demonstrated that the current density greatly exceeds the value discussed in the conventional theory. Nanoparticles are shown to be promising building blocks for nanomaterials-based tunneling networks.
Directory of Open Access Journals (Sweden)
Yaser Hajati
2016-02-01
Full Text Available We study the transport properties in a ferromagnetic/nonmagnetic/ferromagnetic (FNF silicene junction in which an electrostatic gate potential, U, is attached to the nonmagnetic region. We show that the electrostatic gate potential U is a useful probe to control the band structure, quasi-bound states in the nonmagnetic barrier as well as the transport properties of the FNF silicene junction. In particular, by introducing the electrostatic gate potential, both the spin and valley conductances of the junction show an oscillatory behavior. The amplitude and frequency of such oscillations can be controlled by U. As an important result, we found that by increasing U, the second characteristic of the Klein tunneling is satisfied as a result of the quasiparticles chirality which can penetrate through a potential barrier. Moreover, it is found that for special values of U, the junction shows a gap in the spin and valley-resolve conductance and the amplitude of this gap is only controlled by the on-site potential difference, Δz. Our findings of high controllability of the spin and valley transport in such a FNF silicene junction may improve the performance of nano-electronics and spintronics devices.
Kanai, Shun; Gajek, Martin; Worledge, D. C.; Matsukura, Fumihiro; Ohno, Hideo
2014-12-01
We measure homodyne-detected ferromagnetic resonance (FMR) induced by the electric-field effect in a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with perpendicular magnetic easy axis under dc bias voltages up to 0.1 V. From the bias dependence of the resonant frequency, we find that the first order perpendicular magnetic anisotropy is modulated by the applied electric field, whereas the second order component is virtually independent of the electric field. The lineshapes of the FMR spectra are bias dependent, which are explained by the combination of electric-field effect and reflection of the bias voltage from the MTJ.
Spin-dependent level density in interacting Boson-Fermion-Fermion model of the Odd-Odd Nucleus 196Au
International Nuclear Information System (INIS)
Kabashi, S.; Bekteshi, S.; Ahmetaj, S.; Shaqiri, Z.
2009-01-01
The level density of the odd-odd nucleus 196 Au is investigated in the interacting boson-fermion-fermion model (IBFFM) which accounts for collectivity and complex interaction between quasiparticle and collective modes.The IBFFM spin-dependent level densities show high-spin reduction with respect to Bethe formula.This can be well accounted for by a modified spin-dependent level density formula. (authors)
The role of the axial anomaly in determining spin-dependent parton distributions
International Nuclear Information System (INIS)
Carlitz, R.D.; Collins, J.C.; Mueller, A.H.
1989-01-01
It is shown that the forward matrix elements of j 5 μ , the flavor singlet axial vector current, do not measure the helicity carried by quarks and anti-quarks but also include a spin-dependent gluonic component due to the anomaly. Detailed phenomenological and field theoretic reasons are given for the necessity of a gluonic component in the matrix element of j 5 μ . The first higher order corrections to the basic box and triangle graphs are discussed and shown not to modify the conclusions drawn in the leading order calculation. We close with a few comments on the possible phenomenological implications of the anomalous contribution. 25 refs., 6 figs
New measurements of spin-dependent n-p cross sections
International Nuclear Information System (INIS)
Raichle, B. W.; Gould, C. R.; Haase, D. G.; Seely, M. L.; Walston, J. R.; Tornow, W.; Wilburn, W. S.; Penttilae, S. I.; Hoffmann, G. W.
1999-01-01
We report on new measurements of the spin-dependent neutron-proton total cross-section differences in longitudinal and transverse geometries (Δσ L and Δσ T respectively) and between 5 and 20 MeV. These transmission experiments involve a polarized neutron beam and polarized proton target. The polarized neutron beam was produced as a secondary beam via charged-particle induced neutron-production reactions. The proton target was cryogenically cooled and dynamically polarized. These data will be used to extract ε 1 , the phase-shift parameter which characterizes the strength of the tensor interaction at low energy
Spin-dependent Hall effect in degenerate semiconductors: a theoretical study
International Nuclear Information System (INIS)
Idrish Miah, M
2008-01-01
The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V SDH ) is derived, and drift and diffusive contributions to V SDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V SDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V SDH is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.
Medium energy inelastic proton-nucleus scattering with spin dependent NN interaction
International Nuclear Information System (INIS)
Ahmad, I.; Auger, J.P.
1981-12-01
The previously proposed effective profile expansion method for the Glauber multiple scattering model calculation has been extended to the case of proton-nucleus inelastic scattering with spin dependent NN interaction. Using the method which turns out to be computationally simple and of relatively wider applicability, a study of sensitivity of proton-nucleus inelastic scattering calculation to the sometimes neglected momentum transfer dependence of the NN scattering amplitude has been made. We find that the calculated polarization is particularly sensitive in this respect. (author)
On the mechanism of spin-dependent (e,2e) scattering from a ferromagnetic surface
International Nuclear Information System (INIS)
Samarin, S N; Sergeant, A D; Pravica, L; Cvejanovic, D; Wilkie, P; Guagliardo, P; Williams, J F; Artamonov, O M; Suvorova, A A
2009-01-01
A simple model is suggested for a qualitative analysis of spin-dependent (e,2e) reaction on a ferromagnetic surface. The model is based on the scattering of the primary electron with the average spin projection 1 > by the valence electron with the average spin projection 2 >. To test the model the energy distributions of correlated electron pairs are measured for parallel and anti-parallel orientations of the magnetic moment of the cobalt film and polarization vector of the incident beam. The proposed model explains qualitatively the spin-asymmetry of the measured binding energy spectrum.
Ab initio study of spin-dependent transport in carbon nanotubes with iron and vanadium adatoms
DEFF Research Database (Denmark)
Fürst, Joachim Alexander; Brandbyge, Mads; Jauho, Antti-Pekka
2008-01-01
(majority or minority) being scattered depends on the adsorbate and is explained in terms of d-state filling. We contrast the single-walled carbon nanotube results to the simpler case of the adsorbate on a flat graphene sheet with periodic boundary conditions and corresponding width in the zigzag direction......We present an ab initio study of spin-dependent transport in armchair carbon nanotubes with transition metal adsorbates: iron or vanadium. The method based on density functional theory and nonequilibrium Green's functions is used to compute the electronic structure and zero-bias conductance...
Goldstein, G R
2001-01-01
Spin dependent fragmentation functions for heavy flavor quarks to fragment into heavy baryons are calculated in a quark-diquark model. The production of intermediate spin 1/2 and 3/2 excited states is explicity included. $\\Lambda_b$ , $\\Lambda_c$ and $\\Xi_c$ production rate and polarization at LEP energies are calculated and, where possible, compared with experiment. A different approach, also relying on a heavy quark-diquark model, is proposed for the small momentum transfer inclusive production of polarized heavy flavor hyperons. The predicted $\\Lambda_c$ polarization is roughly in agreement with experiment.
Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes
Energy Technology Data Exchange (ETDEWEB)
Yang, Lin' an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying; Xu, Shengrui; Hao, Yue [State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)
2016-04-28
Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A and 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.
Tunneling of Atoms, Nuclei and Molecules
International Nuclear Information System (INIS)
Bertulani, C.A.
2015-01-01
This is a brief review of few relevant topics on tunneling of composite particles and how the coupling to intrinsic and external degrees of freedom affects tunneling probabilities. I discuss the phenomena of resonant tunneling, different barriers seen by subsystems, damping of resonant tunneling by level bunching and continuum effects due to particle dissociation. (author)
Nikolaev, M. A.; Klapdor-Kleingrothaus, H. V.
1993-06-01
We present calculations of the nuclear from factors for spin-dependent elastic scattering of dark matter WIMPs from123Te and131Xe isotopes, proposed to be used for dark matter detection. A method based on the theory of finite Fermi systems was used to describe the reduction of the single-particle spin-dependent matrix elements in the nuclear medium. Nucleon single-particle states were calculated in a realistic shell model potential; pairing effects were treated within the BCS model. The coupling of the lowest single-particle levels in123Te to collective 2+ excitations of the core was taken into account phenomenologically. The calculated nuclear form factors are considerably less then the single-particle ones for low momentum transfer. At high momentum transfer some dynamical amplification takes place due to the pion exchange term in the effective nuclear interaction. But as the momentum transfer increases, the difference disappears, the momentum transfer increases and the quenching effect disappears. The shape of the nuclear form factor for the131Xe isotope differs from the one obtained using an oscillator basis.
International Nuclear Information System (INIS)
Nikolaev, M.A.; Klapdor-Kleingrothaus, H.V.
1993-01-01
We present calculations of the nuclear from factors for spin-dependent elastic scattering of dark matter WIMPs from 123 Te and 131 Xe isotopes, proposed to be used for dark matter detection. A method based on the theory of finite Fermi systems was used to describe the reduction of the single-particle spin-dependent matrix elements in the nuclear medium. Nucelon single-particle states were calculated in a realistic shell model potential; pairing effects were treated within the BCS model. The coupling of the lowest single-particle levels in 123 Te to collective 2 + excitations of the core was taken into account phenomenologically. The calculated nuclear form factors are considerably less then the single-particle ones for low momentum transfer. At high momentum transfer some dynamical amplification takes place due to the pion exchange term in the effective nuclear interaction. But as the momentum transfer increases, the difference disappears, the momentum transfer increases and quenching effect disappears. The shape of the nuclear form factor for the 131 Xe isotope differs from the one obtained using an oscillator basis. (orig.)
Spin dependence in the neutralization of He+ ions in metals: An analysis of different contributions
International Nuclear Information System (INIS)
Alducin, M.
2005-01-01
We study the spin polarization of the Auger electrons produced during the neutralization of He + ions in a free electron gas. In this process, one metal electron decays to the unoccupied state and a second electron is promoted to a continuum excited state. Although the spin of the decaying electron is fixed, both spins are allowed for the excited one. The states of the electrons involved in this Auger capture process are described by the spin-dependent Kohn-Sham orbitals obtained from density functional theory and the local spin approximation. The Auger capture rates indicate a strong polarization of the excited electron. In a paramagnetic free electron gas, there are two mechanisms accounting for this effect, the spin-dependent screening and the interference between indistinguishable processes when the involved electrons are in the same spin state. In a spin-polarized medium, the difference in the density of spin-up and spin-down electrons is a new ingredient to be considered. As a result, the excited electrons preferably come from the majority band, even in the case of He + ions with spin opposite to that of the majority band embedded in a low spin-polarized free electron gas
The magnetism and spin-dependent electronic transport properties of boron nitride atomic chains
International Nuclear Information System (INIS)
An, Yipeng; Zhang, Mengjun; Wang, Tianxing; Jiao, Zhaoyong; Wu, Dapeng; Fu, Zhaoming; Wang, Kun
2016-01-01
Very recently, boron nitride atomic chains were successively prepared and observed in experiments [O. Cretu et al., ACS Nano 8, 11950 (2015)]. Herein, using a first-principles technique, we study the magnetism and spin-dependent electronic transport properties of three types of BN atomic chains whose magnetic moment is 1 μ B for B n N n−1 , 2 μ B for B n N n , and 3 μ B for B n N n+1 type atomic chains, respectively. The spin-dependent electronic transport results demonstrate that the short B n N n+1 chain presents an obvious spin-filtering effect with high spin polarization ratio (>90%) under low bias voltages. Yet, this spin-filtering effect does not occur for long B n N n+1 chains under high bias voltages and other types of BN atomic chains (B n N n−1 and B n N n ). The proposed short B n N n+1 chain is predicted to be an effective low-bias spin filters. Moreover, the length-conductance relationships of these BN atomic chains were also studied.
Energy Technology Data Exchange (ETDEWEB)
Sanchez-Barriga, Jaime; Varykhalov, Andrei; Fink, Joerg; Rader, Oliver; Duerr, Hermann; Eberhardt, Wolfgang [Bessy GmbH, Berlin (Germany)
2008-07-01
Spin dependent low-energy electronic excitations in 3d ferromagnets are of special interest due to the need of a microscopic understanding of the electronic structure of solids. Low-energy electrons (or holes) become dressed by a cloud of excitations resulting in quasiparticles of a finite lifetime and a different effective mass. These type of excitations have been studied by many theoretical methods, and it has been found that because of many body effects no sharp quasiparticle peaks exist for binding energies larger than 2 eV. Interestingly, it has been shown that strong correlation effects could particularly affect majority spin electrons, leading to a pronounced damping of quasiparticles at binding energies around 2 eV and above. In order to give an experimental corroboration to these findings, we have performed a systematic study of the spin-dependent quasiparticle lifetime and band structure of ferromagnetic 3d transition metal surfaces by means of spin and angle-resolved photoemission spectroscopy. On hcp Co(0001), fcc Ni(111) and bcc Fe(110), we have found a more pronounced renormalization of the majority spin quasiparticle spectral weight going from Ni to Co which are both strong ferromagnets. For Fe, a weak ferromagnet, such a process becomes more prominent in the minority channel.
Generalized spin-dependent WIMP-nucleus interactions and the DAMA modulation effect
Energy Technology Data Exchange (ETDEWEB)
Scopel, Stefano; Yoon, Kook-Hyun; Yoon, Jong-Hyun, E-mail: scopel@sogang.ac.kr, E-mail: koreasds@naver.com, E-mail: pledge200@gmail.com [Department of Physics, Sogang University, Seoul (Korea, Republic of)
2015-07-01
Guided by non-relativistic Effective Field Theory (EFT) we classify the most general spin-dependent interactions between a fermionic Weakly Interacting Massive Particle (WIMP) and nuclei, and within this class of models we discuss the viability of an interpretation of the DAMA modulation result in terms of a signal from WIMP elastic scatterings using a halo-independent approach. We find that, although several relativistic EFT's can lead to a spin-dependent cross section, in some cases with an explicit, non-negligible dependence on the WIMP incoming velocity, three main scenarios can be singled out in the non-relativistic limit which approximately encompass them all, and that only differ by their dependence on the transferred momentum. For two of them compatibility between DAMA and other constraints is possible for a WIMP mass below 30 GeV, but only for a WIMP velocity distribution in the halo of our Galaxy which departs from a Maxwellian. This is achieved by combining a suppression of the WIMP effective coupling to neutrons (to evade constraints from xenon and germanium detectors) to an explicit quadratic or quartic dependence of the cross section on the transferred momentum (that leads to a relative enhancement of the expected rate off sodium in DAMA compared to that off fluorine in droplet detectors and bubble chambers). For larger WIMP masses the same scenarios are excluded by scatterings off iodine in COUPP.
Fotoohi, Somayeh; Haji-Nasiri, Saeed
2018-04-01
Spin-dependent electronic transport properties of single 3d transition metal (TM) atoms doped α-armchair graphyne nanoribbons (α-AGyNR) are investigated by non-equilibrium Green's function (NEGF) method combined with density functional theory (DFT). It is found that all of the impurity atoms considered in this study (Fe, Co, Ni) prefer to occupy the sp-hybridized C atom site in α-AGyNR, and the obtained structures remain planar. The results show that highly localized impurity states are appeared around the Fermi level which correspond to the 3d orbitals of TM atoms, as can be derived from the projected density of states (PDOS). Moreover, Fe, Co, and Ni doped α-AGyNRs exhibit magnetic properties due to the strong spin splitting property of the energy levels. Also for each case, the calculated current-voltage characteristic per super-cell shows that the spin degeneracy in the system is obviously broken and the current becomes strongly spin dependent. Furthermore, a high spin-filtering effect around 90% is found under the certain bias voltages in Ni doped α-AGyNR. Additionally, the structure with Ni impurity reveals transfer characteristic that is suitable for designing a spin current switch. Our findings provide a high possibility to design the next generation spin nanodevices with novel functionalities.
Tsaturyan, Yeghishe; Barg, Andreas; Simonsen, Anders; Villanueva, Luis Guillermo; Schmid, Silvan; Schliesser, Albert; Polzik, Eugene S
2014-03-24
Dielectric membranes with exceptional mechanical and optical properties present one of the most promising platforms in quantum opto-mechanics. The performance of stressed silicon nitride nanomembranes as mechanical resonators notoriously depends on how their frame is clamped to the sample mount, which in practice usually necessitates delicate, and difficult-to-reproduce mounting solutions. Here, we demonstrate that a phononic bandgap shield integrated in the membrane's silicon frame eliminates this dependence, by suppressing dissipation through phonon tunneling. We dry-etch the membrane's frame so that it assumes the form of a cm-sized bridge featuring a 1-dimensional periodic pattern, whose phononic density of states is tailored to exhibit one, or several, full band gaps around the membrane's high-Q modes in the MHz-range. We quantify the effectiveness of this phononic bandgap shield by optical interferometry measuring both the suppressed transmission of vibrations, as well as the influence of frame clamping conditions on the membrane modes. We find suppressions up to 40 dB and, for three different realized phononic structures, consistently observe significant suppression of the dependence of the membrane's modes on sample clamping-if the mode's frequency lies in the bandgap. As a result, we achieve membrane mode quality factors of 5 × 10(6) with samples that are tightly bolted to the 8 K-cold finger of a cryostat. Q × f -products of 6 × 10(12) Hz at 300 K and 14 × 10(12) Hz at 8 K are observed, satisfying one of the main requirements for optical cooling of mechanical vibrations to their quantum ground-state.
Spin Heat Accumulation Induced by Tunneling from a Ferromagnet
Vera-Marun, I.J.; Wees, B.J. van; Jansen, R.
2014-01-01
An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the
How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?
Wu, Dan-Dan; Liu, Qing-Bo; Fu, Hua-Hua; Wu, Ruqian
2017-11-30
The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.
Spin-dependent electron emission from metals in the neutralization of He+ ions
International Nuclear Information System (INIS)
Alducin, M.; Roesler, M.; Juaristi, J.I.; Muino, R. Diez; Echenique, P.M.
2005-01-01
We calculate the spin-polarization of electrons emitted in the neutralization of He + ions interacting with metals. All stages of the emission process are included: the spin-dependent perturbation induced by the projectile, the excitation of electrons in Auger neutralization processes, the creation of a cascade of secondaries, and the escape of the electrons through the surface potential barrier. The model allows us to explain in quantitative terms the measured spin-polarization of the yield in the interaction of spin-polarized He + ions with paramagnetic surfaces, and to disentangle the role played by each of the involved mechanisms. We show that electron-electron scattering processes at the surface determine the spin-polarization of the total yield. High energy emitted electrons are the ones providing direct information on the He + ion neutralization process and on the electronic properties of the surface
Spin-dependent Hall effect in degenerate semiconductors: a theoretical study
Energy Technology Data Exchange (ETDEWEB)
Idrish Miah, M [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)], E-mail: m.miah@griffith.edu.au
2008-10-15
The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V{sub SDH}) is derived, and drift and diffusive contributions to V{sub SDH} are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V{sub SDH} increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V{sub SDH} is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.
The spin-dependent structure function g1 of the deuteron
International Nuclear Information System (INIS)
Bueltmann, S.
1996-01-01
Results on the spin-dependent structure function g 1 d of the deuteron measured by the Spin Muon Collaboration at CERN are presented. They are based on deep-inelastic scattering of 190 GeV polarized muons off a polarized deuteron target in the kinematic range of 0.003 ≤ x Bj ≤ 0.7 and 1 GeV 2 ≤ Q 2 ≤ 60 GeV 2 . The structure function is found to be negative for small values of x Bj , while the proton structure function g 1 p measured earlier by the SMC is positive over the whole x Bj -range. The Bjorken sum rule is in good agreement with the first moments of the structure functions, while the Ellis-Jaffe sum rule is violated by more than three standard deviations for the deuteron measurement. (author)
Solvable model of spin-dependent transport through a finite array of quantum dots
International Nuclear Information System (INIS)
Avdonin, S A; Dmitrieva, L A; Kuperin, Yu A; Sartan, V V
2005-01-01
The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to a 1D quantum wire (spin gun) for various semiconductor materials is studied. The Breit-Fermi term for spin-spin interaction in the effective Hamiltonian of the device is shown to result in a dependence of transmission coefficient on the spin orientation. The difference of transmission probabilities for singlet and triplet channels can reach a few per cent for a single quantum dot. For several quantum dots in the array due to interference effects it can reach approximately 100% for some energy intervals. For the same energy intervals the conductance of the device reaches the value ∼1 in [e 2 /πℎ] units. As a result a model of the spin gun which transforms the spin-unpolarized electron beam into a completely polarized one is suggested
Recent SLAC measurements of the spin dependent structure functions for the proton and neutron
International Nuclear Information System (INIS)
Zapalac, G.
1995-09-01
The authors present results from SLAC experiments E142 and E143 for the spin dependent structure functions of the proton g 1 p (x, Q 2 ) and neutron g 1 n (x,Q 2 ) measured in deep inelastic scattering of polarized electrons from a polarized target. Experiment E142 measures ∫ 0 1 g 1 n (x)dx = -0.022 ± 0.011 at 2 > = 2 (GeV/c) 2 using a polarized 3 He target. Experiment E143 measures ∫ 0 1 g 1 p (x)dx = 0.129 ± 0.011 at 2 > = 3 (GeV/c) 2 using a polarized NH 3 target. These results are combined at Q 2 = 3 (GeV/c) 2 to yield ∫ 0 1 [g 1 p (x) - g 1 n (x)]dx = 0.151 ± 0.015. The Bjorken sum rule predicts 0.171 ± 0.008
Relativistic description of quark-antiquark bound states. II. Spin-dependent treatment
International Nuclear Information System (INIS)
Gara, A.; Durand, B.; Durand, L.
1990-01-01
We present the results of a study of light- and heavy-quark--antiquark bound states in the context of the reduced Bethe-Salpeter equation, including the full spin dependence. We obtain good fits to the observed spin splittings in the b bar b and c bar c systems using a short-distance single-gluon-exchange interaction, and a long-distance scalar confining interaction. However, we cannot obtain satisfactory fits to the centers of gravity of the b bar b and c bar c spin multiplets at the same time, and the splittings calculated for q bar Q mesons containing the lighter quarks are very poor. The difficulty appears to be intrinsic to the reduced Salpeter equation for reasons which we discuss
Theoretical models of the spin-dependent charge-carrier dynamics in metals and semiconductors
International Nuclear Information System (INIS)
Krauss, Michael
2010-01-01
This thesis is concerned with spin-dependent carrier dynamics in semiconductors and metals. We are especially interested in the dynamics on ultrashort timescales, which can be driven by ultrashort optical excitation, and use of a theoretical description in terms of the dynamical spin-density matrix. The first part of this thesis is concerned with spin-dependent carrier dynamics in bulk GaAs. For conduction electrons in GaAs, the most important mechanisms, by which an electron spin polarization can be destroyed, are the Dyakonov-Perel and Bir-Aronov-Pikus mechanisms. For the Dyakonov-Perel effect, our treatment is the first calculation of the dynamics of the spindensity matrix for bulk GaAs. From our microsopic calculation, we extract spin-dephasing times. In particular, we can describe the dependence of the spin-dephasing time for a wide range of n-doping concentrations and explain the spin-dephasing dynamics in and out of the motional-narrowing regime. For the Bir-Aronov-Pikus mechanism, i.e., the exchange interaction of electronics with holes, approximate relaxation times for limiting cases were derived about 30 years ago. We show that these approaches provide an incomplete picture of spin relaxation, and are only valid for high or low densities, whereas the microscopic calculation is capable of explaining the electronic dynamics also for intermediate doping densities, which are most interesting for typical experiments. The spin-dependent hole dynamics in GaAs is much faster than that of electrons, because the p-like hole bands experience the spin-orbit interaction directly, rather than through the interaction with other bands. The resulting spin relaxation is sometimes referred to as an Elliott-Yafet mechanism. For the first time, we present results for the microscopic dynamics of this mechanism for holes in bulk GaAs, and we discuss the different results that may be obtained with different measurement techniques. We also analyze the importance of ''spin hot
Spin-dependent transport and functional design in organic ferromagnetic devices
Directory of Open Access Journals (Sweden)
Guichao Hu
2017-09-01
Full Text Available Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.
A lattice calculation of the nucleon's spin-dependent structure function g2 revisited
International Nuclear Information System (INIS)
Goeckeler, M.; Rakow, P.E.L.; Schaefer, A.; Schierholz, G.
2000-11-01
Our previous calculation of the spin-dependent structure function g 2 is revisited. The interest in this structure function is to a great extent motivated by the fact that it receives contributions from twist-two as well as from twist-three operators already in leading order of 1/Q 2 thus offering the unique possibility of directly assessing higher-twist effects. In our former calculation the lattice operators were renormalized perturbatively and mixing with lower-dimensional operators was ignored. However, the twist-three operator which gives rise to the matrix element d 2 mixes non-perturbatively with an operator of lower dimension. Taking this effect into account leads to a considerably smaller value of d 2 , which is consistent with the experimental data. (orig.)
The Deuteron Spin-dependent Structure Function $g^{d}_1$ and its First Moment
Alexakhin, V.Yu.; Alexeev, G.D.; Alexeev, M.; Amoroso, A.; Balestra, F.; Ball, J.; Barth, J.; Baum, G.; Becker, M.; Bedfer, Y.; Bernet, C.; Bertini, R.; Bettinelli, M.; Birsa, R.; Bisplinghoff, J.; Bordalo, P.; Bradamante, F.; Bressan, A.; Brona, G.; Burtin, E.; Bussa, M.P.; Bytchkov, V.N.; Chapiro, A.; Cicuttin, A.; Colantoni, M.; Colavita, A.A.; Costa, S.; Crespo, M.L.; d'Hose, N.; Dalla Torre, S.; Das, S.; Dasgupta, S.S.; De Masi, R.; Dedek, N.; Demchenko, D.; Denisov, O.Yu.; Dhara, L.; Diaz, V.; Dinkelbach, A.M.; Donskov, S.V.; Dorofeev, V.A.; Doshita, N.; Duic, V.; Dunnweber, W.; Efremov, A.; Eversheim, P.D.; Eyrich, W.; Faessler, M.; Fauland, P.; Ferrero, A.; Ferrero, L.; Finger, M.; M. Finger jr.; Fischer, H.; Franz, J.; Friedrich, J.M.; Frolov, V.; Garfagnini, R.; Gautheron, F.; Gavrichtchouk, O.P.; Gerassimov, S.; Geyer, R.; Giorgi, M.; Gobbo, B.; Goertz, S.; Gorin, A.M.; Grajek, O.A.; Grasso, A.; Grube, B.; Guskov, A.; Haas, F.; Hannappel, J.; von Harrach, D.; Hasegawa, T.; Hedicke, S.; Heinsius, F.H.; Hermann, R.; Hess, C.; Hinterberger, F.; von Hodenberg, M.; Horikawa, N.; Horikawa, S.; Horn, I.; Ilgner, C.; Ioukaev, A.I.; Ivanchin, I.; Ivanov, O.; Iwata, T.; Jahn, R.; Janata, A.; Joosten, R.; Jouravlev, N.I.; Kabuss, E.; Kang, D.; Ketzer, B.; Khaustov, G.V.; Khokhlov, Yu. A.; Kisselev, Yu.; Klein, F.; Klimaszewski, K.; Koblitz, S.; Koivuniemi, J.H.; Kolosov, V.N.; Komissarov, E.V.; Kondo, K.; Konigsmann, K.; Konorov, I.; Konstantinov, V.F.; Korentchenko, A.S.; Korzenev, A.; Kotzinian, A.M.; Koutchinski, N.A.; Kouznetsov, O.; Kowalik, K.; Kramer, D.; Kravchuk, N.P.; Krivokhizhin, G.V.; Kroumchtein, Z.V.; Kubart, J.; Kuhn, R.; Kukhtin, V.; Kunne, F.; Kurek, K.; Ladygin, M.E.; Lamanna, M.; Le Goff, J.M.; Leberig, M.; Lednev, A.A.; Lehmann, A.; Lichtenstadt, J.; Liska, T.; Ludwig, I.; Maggiora, A.; Maggiora, M.; Magnon, A.; Mallot, G.K.; Marchand, C.; Marroncle, J.; Martin, A.; Marzec, J.; Masek, L.; Massmann, F.; Matsuda, T.; Matthia, D.; Maximov, A.N.; Meyer, W.; Mielech, A.; Mikhailov, Yu. V.; Moinester, M.A.; Nagel, T.; Nahle, O.; Nassalski, J.; Neliba, S.; Neyret, D.P.; Nikolaenko, V.I.; Nikolaev, K.; Nozdrin, A.A.; Obraztsov, V.F.; Olshevsky, A.G.; Ostrick, M.; Padee, A.; Pagano, P.; Panebianco, S.; Panzieri, D.; Paul, S.; Peshekhonov, D.V.; Peshekhonov, V.D.; Piragino, G.; Platchkov, S.; Pochodzalla, J.; Polak, J.; Polyakov, V.A.; Pontecorvo, G.; Popov, A.A.; Pretz, J.; Procureur, S.; Quintans, C.; Ramos, S.; Reicherz, G.; Rondio, E.; Rozhdestvensky, A.M.; Ryabchikov, D.; Samoylenko, V.D.; Sandacz, A.; Santos, H.; Sapozhnikov, M.G.; Savin, I.A.; Schiavon, P.; Schill, C.; Schmitt, L.; Schroeder, W.; Seeharsch, D.; Seimetz, M.; Setter, D.; Shevchenko, O.Yu.; Siebert, H.W.; Silva, L.; Sinha, L.; Sissakian, A.N.; Slunecka, M.; Smirnov, G.I.; Sozzi, F.; Srnka, A.; Stinzing, F.; Stolarski, M.; Sugonyaev, V.P.; Sulc, M.; Sulej, R.; Tchalishev, V.V.; Tessaro, S.; Tessarotto, F.; Teufel, A.; Tkatchev, L.G.; Trippel, S.; Venugopal, G.; Virius, M.; Vlassov, N.V.; Webb, R.; Weise, E.; Weitzel, Q.; Windmolders, R.; Wislicki, W.; Zaremba, K.; Zavertyaev, M.; Zemlyanichkina, E.; Zhao, J.; Zvyagin, A.
2007-01-01
We present a measurement of the deuteron spin-dependent structure function g^d_1 based on the data collected by the COMPASS experiment at CERN during the years 2002-2004. The data provide an accurate evaluation for \\Gamma^d_1, the first moment of g^d_1(x), and for the matrix element of the singlet axial current, a_0. The results of QCD fits in the next to leading order (NLO) on all g1 deep inelastic scattering data are also presented. They provide two solutions with the gluon spin distribution function \\Delta_G positive or negative, which describe the data equally well. In both cases, at Q^2 = 3(GeV/c)^2 the first moment of \\Delta G is found to be of the order of 0:2 - 0:3 in absolute value.
Tunneling Anomalous and Spin Hall Effects.
Matos-Abiague, A; Fabian, J
2015-07-31
We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.
Shan, Lei; Gong, Jing; Wang, Yong-Lei; Shen, Bing; Hou, Xingyuan; Ren, Cong; Li, Chunhong; Yang, Huan; Wen, Hai-Hu; Li, Shiliang; Dai, Pengcheng
2012-06-01
We used high-resolution scanning tunneling spectroscopy to study the hole-doped iron pnictide superconductor Ba(0.6)K(0.4)Fe(2)As(2) (T(c)=38 K). Features of a bosonic excitation (mode) are observed in the measured quasiparticle density of states. The bosonic features are intimately associated with the superconducting order parameter and have a mode energy of ~14 meV, similar to the spin resonance measured by inelastic neutron scattering. These results indicate a strong electron-spin excitation coupling in iron pnictide superconductors, similar to that in high-T(c) copper oxide superconductors.
Resonant tunnelling optoelectronic circuits
Figueiredo, J.M.L.; Patarata Romeira, B.M.; Slight, T.J.; Ironside, C.N.; Kim, Ki Young
2010-01-01
Nowadays, most communication networks such as local area networks (LANs), metropolitan area networks (MANs), and wide area networks (WANs) have replaced or are about to replace coaxial cable or twisted copper wire with fiber optical cables. Light-wave communication systems comprise a transmitter
Temperature dependence of shot noise in double barrier magnetic tunnel junctions
Niu, Jiasen; Liu, Liang; Feng, J. F.; Han, X. F.; Coey, J. M. D.; Zhang, X.-G.; Wei, Jian
2018-03-01
Shot noise reveals spin dependent transport properties in a magnetic tunnel junction. We report measurement of shot noise in CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions, which shows a strong temperature dependence. The Fano factor used to characterize shot noise increases with decreasing temperature. A sequential tunneling model can be used to account for these results, in which a larger Fano factor results from larger spin relaxation length at lower temperatures.
Afzalian, Aryan; Colinge, Jean-Pierre; Flandre, Denis
2011-05-01
A new concept of nanoscale MOSFET, the Gate Modulated Resonant Tunneling Transistor (RT-FET), is presented and modeled using 3D Non-Equilibrium Green's Function simulations enlightening the main physical mechanisms. Owing to the additional tunnel barriers and the related longitudinal confinement present in the device, the density of state is reduced in its off-state, while remaining comparable in its on-state, to that of a MOS transistor without barriers. The RT-FET thus features both a lower RT-limited off-current and a faster increase of the current with V G, i.e. an improved slope characteristic, and hence an improved Ion/ Ioff ratio. Such improvement of the slope can happen in subthreshold regime, and therefore lead to subthreshold slope below the kT/q limit. In addition, faster increase of current and improved slope occur above threshold and lead to high thermionic on-current and significant Ion/ Ioff ratio improvement, even with threshold voltage below 0.2 V and supply voltage V dd of a few hundreds of mV as critically needed for future technology nodes. Finally RT-FETs are intrinsically immune to source-drain tunneling and are therefore promising candidate for extending the roadmap below 10 nm.
International Nuclear Information System (INIS)
Dorokhov, A.E.; Kochelev, N.I.
1991-01-01
Within the model of QCD vacuum as an instanton liquid the spin-dependent structure functions of sea quarks are obtained. It is shown that the EMC data manages the definition of new Regge trajectory connected with the axial anomaly. The model explains the modern experimental data on the sea quark structure functions. 23 refs.; 3 figs
Summary of measurements of the spin dependence in NN interactions from 2 to 12 GeV/c
International Nuclear Information System (INIS)
Rust, D.R.
1975-01-01
The status of experimental measurements of the spin dependence in NN interactions from 2 to 12 GeV/c as of June 1975 is summarized. Older data have been left out if more accurate or more complete results are available
Edge-defect induced spin-dependent Seebeck effect and spin figure of merit in graphene nanoribbons.
Liu, Qing-Bo; Wu, Dan-Dan; Fu, Hua-Hua
2017-10-11
By using the first-principle calculations combined with the non-equilibrium Green's function approach, we have studied spin caloritronic properties of graphene nanoribbons (GNRs) with different edge defects. The theoretical results show that the edge-defected GNRs with sawtooth shapes can exhibit spin-dependent currents with opposite flowing directions by applying temperature gradients, indicating the occurrence of the spin-dependent Seebeck effect (SDSE). The edge defects bring about two opposite effects on the thermal spin currents: the enhancement of the symmetry of thermal spin-dependent currents, which contributes to the realization of pure thermal spin currents, and the decreasing of the spin thermoelectric conversion efficiency of the devices. It is fortunate that applying a gate voltage is an efficient route to optimize these two opposite spin thermoelectric properties towards realistic device applications. Moreover, due to the existence of spin-splitting band gaps, the edge-defected GNRs can be designed as spin-dependent Seebeck diodes and rectifiers, indicating that the edge-defected GNRs are potential candidates for room-temperature spin caloritronic devices.
The spin dependent structure function g1 of the deuteron and the proton
International Nuclear Information System (INIS)
Klostermann, L.
1995-01-01
This thesis presents a study on the spin structure of the nucleon, via deep inelastic scattering (DIS) of polarised nuons on polarised proton and deuterium targets. The work was done in the Spin Muon Collaboration (SMC) at CERN in Geneva. From the asymmetry in the scattering cross section for nucleon and lepton spins parallel and anti-parallel, one con determine the spin dependent structure function g 1 , which contains information on the quark and gluon spin distribution functions. The interpretation in the frame work of the quark parton model (QPM) of earlier results on g 1 p by the European Muon Collaboration (EMC), gave an indication that only a small fraction of the proton spin, compatible with zero, is carried by the spins of the constituent quarks. The SMC was set up to check this unexpected result with improved accuracy, and to combine measurements of g 1 p and g 1 d to test a fundamental sum rule in quantum chromodynamics (QCD), the Bjorken sum rule. (orig./WL)
Altuntaş, Emine; Ammon, Jeffrey; Cahn, Sidney B.; DeMille, David
2018-04-01
Nuclear-spin-dependent parity violation (NSD-PV) effects in atoms and molecules arise from Z0 boson exchange between electrons and the nucleus and from the magnetic interaction between electrons and the parity-violating nuclear anapole moment. It has been proposed to study NSD-PV effects using an enhancement of the observable effect in diatomic molecules [D. DeMille et al., Phys. Rev. Lett. 100, 023003 (2008), 10.1103/PhysRevLett.100.023003]. Here we demonstrate highly sensitive measurements of this type, using the test system 138Ba19F. We show that systematic errors associated with our technique can be suppressed to at least the level of the present statistical sensitivity. With ˜170 h of data, we measure the matrix element W of the NSD-PV interaction with uncertainty δ W /(2 π )<0.7 Hz for each of two configurations where W must have different signs. This sensitivity would be sufficient to measure NSD-PV effects of the size anticipated across a wide range of nuclei.
Spin dependent disorder in a junction device with spin orbit couplings
International Nuclear Information System (INIS)
Ganguly, Sudin; Basu, Saurabh
2016-01-01
Using the multi-probe Landauer-BUttiker formula and Green's function approach, we calculate the longitudinal conductance (LC) and spin Hall conductance (SHC) numerically in a two-dimensional junction system with the Rashba and Dresselhaus spin orbit coupling (SOC) and spin dependent disorder (SDD) in presence of both random onsite and hopping disorder strengths. It has been found that when the strengths of the RSOC and DSOC are same, the SHC vanishes. Further in presence of random onsite or hopping disorder, the SHC is still zero when the strengths of the two types of SOC, that is Rashba and Dressselhaus are the same. This indicates that the cancellation of SHC is robust even in the presence of random disorder. Only with the inclusion of SDD (onsite or hopping), a non-zero SHC is found and it increases as the strength of SDD increases. The physical implication of the existence of a non-zero SHC has been explored in this work. Finally, we have compared the effect of onsite SDD and hopping SDD on both longitudinal and spin Hall conductances. (paper)
Measurement of the spin-dependent structure-functions of the proton and the deuteron
2002-01-01
% NA47 %title \\\\ \\\\The physics motivation of the experiments of the Spin Muon Collaboration is to better understand how the nucleon spin is built-up by its partons and to test the fundamental Bjorken sum rule. \\\\ \\\\The spin-dependent structure functions $g _{1}(x)$ of the proton and the deuteron are determined from the measured cross section asymmetries for deep inelastic scattering of longitudinally polarized muons from longitudinally polarized nucleons. The experiment is similar to the NA2 one of the European Muon Collaboration in which the violation of the Ellis-Jaffe sum rule for the proton was found. \\\\ \\\\The apparatus is the upgraded forward spectrometer which was used originally by the European and New Muon Collaborations. To minimize the systematic uncertainties the target contains two oppositely polarized cells, which were exposed to the muon beam simultaneously. For the experiments in 1991 and 1992 the original EMC polarized target was reinstalled. In 1993 a new polarized target was put into operati...
Equations of motion of test particles for solving the spin-dependent Boltzmann–Vlasov equation
Energy Technology Data Exchange (ETDEWEB)
Xia, Yin [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); University of Chinese Academy of Science, Beijing 100049 (China); Xu, Jun, E-mail: xujun@sinap.ac.cn [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China); Li, Bao-An [Department of Physics and Astronomy, Texas A& M University-Commerce, Commerce, TX 75429-3011 (United States); Department of Applied Physics, Xi' an Jiao Tong University, Xi' an 710049 (China); Shen, Wen-Qing [Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800 (China)
2016-08-10
A consistent derivation of the equations of motion (EOMs) of test particles for solving the spin-dependent Boltzmann–Vlasov equation is presented. The resulting EOMs in phase space are similar to the canonical equations in Hamiltonian dynamics, and the EOM of spin is the same as that in the Heisenburg picture of quantum mechanics. Considering further the quantum nature of spin and choosing the direction of total angular momentum in heavy-ion reactions as a reference of measuring nucleon spin, the EOMs of spin-up and spin-down nucleons are given separately. The key elements affecting the spin dynamics in heavy-ion collisions are identified. The resulting EOMs provide a solid foundation for using the test-particle approach in studying spin dynamics in heavy-ion collisions at intermediate energies. Future comparisons of model simulations with experimental data will help to constrain the poorly known in-medium nucleon spin–orbit coupling relevant for understanding properties of rare isotopes and their astrophysical impacts.
Demonstration of a Sensitive Method to Measure Nuclear-Spin-Dependent Parity Violation
Altuntaş, Emine; Ammon, Jeffrey; Cahn, Sidney B.; DeMille, David
2018-04-01
Nuclear-spin-dependent parity violation (NSD-PV) effects in atoms and molecules arise from Z0 boson exchange between electrons and the nucleus, and from the magnetic interaction between electrons and the parity-violating nuclear anapole moment. We demonstrate measurements of NSD-PV that use an enhancement of the effect in diatomic molecules, here using the test system 138Ba 19. Our sensitivity surpasses that of any previous atomic parity violation measurement. We show that systematic errors can be suppressed to at least the level of the present statistical sensitivity. We measure the matrix element W of the NSD-PV interaction with total uncertainty δ W /(2 π )<0.7 Hz , for each of two configurations where W must have different signs. This sensitivity would be sufficient to measure NSD-PV effects of the size anticipated across a wide range of nuclei including 137Ba in 137BaF, where |W |/(2 π )≈5 Hz is expected.
Spin-dependent scattering by a potential barrier on a nanotube
International Nuclear Information System (INIS)
Abranyos, Yonatan; Gumbs, Godfrey; Fekete, Paula
2010-01-01
The electron spin effects on the surface of a nanotube have been considered through the spin-orbit interaction (SOI), arising from the electron confinement on the surface of the nanotube. This is of the same nature as the Rashba-Bychkov SOI at a semiconductor heterojunction. We estimate the effect of disorder within a potential barrier on the transmission probability. Using a continuum model, we obtain analytic expressions for the spin-split energy bands for electrons on the surface of nanotubes in the presence of SOI. First we calculate analytically the amplitudes of scattering from a potential barrier located around the axis of the nanotube into spin-dependent states. The effect of disorder on the scattering process is included phenomenologically and induces a reduction in the transition probability. We analyze the relative role of SOI and disorder in the transmission probability which depends on the angular and linear momentum of the incoming particle, and its spin orientation. Finally we demonstrate that in the presence of disorder, perfect transmission may not be achieved for finite barrier heights.
Czech Academy of Sciences Publication Activity Database
Sýkora, R.; Turek, Ilja
2012-01-01
Roč. 24, č. 36 (2012), 365801/1-365801/10 ISSN 0953-8984 R&D Projects: GA ČR(CZ) GAP204/11/1228 Institutional support: RVO:68081723 Keywords : tunnel junctions * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.355, year: 2012
Scattering of polarized 7Li by 120Sn and projectile-target spin-dependent interactions
International Nuclear Information System (INIS)
Sakuragi, Y.; Yahiro, M.; Kamimura, M.; Tanifuji, M.
1986-07-01
Scattering of 7 Li by 120 Sn targets at E lab = 44 MeV is investigated in the coupled-channel frame by taking account of the projectile virtual excitations to the lowest three excited states. Calculations are performed by the cluster-folding (CF) interactions and the double-folding (DF) one. Both interactions reproduce very well the expeimental data on the cross section, the vector analyzing power, the second-rank tensor ones and the third-rank tensor one in elastic and projectile inelastic scattering, although some differences are found between the CF results and the DF ones. In the calculation, the virtual excitations of the projectile are important for most of the analyzing powers and the spin-orbit interaction is indispensable for the vector analyzing power. These features are in contrast to those in 7 Li - 58 Ni scattering at 20 MeV and are interpreted as over-Coulomb-barrier effects. The scattering amplitudes and the analyzing powers are investigated by the invariant amplitude method, which provides a key connecting the spin-dependent interactions to the analyzing powers. The method proposes an important relationship between the tensor analyzing powers, which is useful in analyses of both theoretical and experimental results. Finally, it is found that in the elastic scattering the second-rank tensor analyzing powers are proportional to the strength of the second-rank tensor interaction and the vector and third-rank tensor analyzing powers to the square or cube of the strength of this interaction, while in the inelastic scattering the cross section is proportional to the square of the strength of the tensor interaction, other quantities being weakly dependent on the strength. (author)
International Nuclear Information System (INIS)
Sakurai, Atsunori; Tanimura, Yoshitaka
2014-01-01
The quantum dissipative dynamics of a tunneling process through double barrier structures is investigated on the basis of non-perturbative and non-Markovian treatment. We employ a Caldeira–Leggett Hamiltonian with an effective potential calculated self-consistently, accounting for the electron distribution. With this Hamiltonian, we use the reduced hierarchy equations of motion in the Wigner space representation to study non-Markovian and non-perturbative thermal effects at finite temperature in a rigorous manner. We study current variation in time and the current–voltage (I–V ) relation of the resonant tunneling diode for several widths of the contact region, which consists of doped GaAs. Hysteresis and both single and double plateau-like behavior are observed in the negative differential resistance (NDR) region. While all of the current oscillations decay in time in the NDR region in the case of a strong system–bath coupling, there exist self-excited high-frequency current oscillations in some parts of the plateau in the NDR region in the case of weak coupling. We find that the effective potential in the oscillating case possesses a basin-like form on the emitter side (emitter basin) and that the current oscillation results from tunneling between the emitter basin and the quantum well in the barriers. We find two distinct types of current oscillations, with large and small oscillation amplitudes, respectively. These two types of oscillation appear differently in the Wigner space, with one exhibiting tornado-like motion and the other exhibiting a two piston engine-like motion. (paper)
Spin polarized electron tunneling and magnetoresistance in molecular junctions.
Szulczewski, Greg
2012-01-01
This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.
Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying
2017-06-01
The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).
Tunneling magnetoresistance and electroresistance in Fe/PbTiO3/Fe multiferroic tunnel junctions
International Nuclear Information System (INIS)
Dai, Jian-Qing
2016-01-01
We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO 3 /Fe multiferroic tunnel junction with asymmetric TiO 2 - and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p z orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.
Energy Technology Data Exchange (ETDEWEB)
Dai, Jian-Qing, E-mail: djqkust@sina.com [School of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)
2016-08-21
We perform first-principles electronic structure and spin-dependent transport calculations for a Fe/PbTiO{sub 3}/Fe multiferroic tunnel junction with asymmetric TiO{sub 2}- and PbO-terminated interfaces. We demonstrate that the interfacial electronic reconstruction driven by the in situ screening of ferroelectric polarization, in conjunction with the intricate complex band structure of barrier, play a decisive role in controlling the spin-dependent tunneling. Reversal of ferroelectric polarization results in a transition from insulating to half-metal-like conducting state for the interfacial Pb 6p{sub z} orbitals, which acts as an atomic-scale spin-valve by releasing the tunneling current in antiparallel magnetization configuration as the ferroelectric polarization pointing to the PbO-terminated interface. This effect produces large change in tunneling conductance. Our results open an attractive avenue in designing multiferroic tunnel junctions with excellent performance by exploiting the interfacial electronic reconstruction originated from the in situ screening of ferroelectric polarization.
Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.
2018-03-01
We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect.
International Nuclear Information System (INIS)
Feiginov, Michael; Kanaya, Hidetoshi; Suzuki, Safumi; Asada, Masahiro
2014-01-01
In search for possibilities to increase the operating frequencies of resonant-tunneling diodes (RTDs), we are studying RTDs working in an unusual regime. The collector side of our diodes is so heavily doped that the collector depletion region is fully eliminated in our RTDs and the ground quantum-well subband stays immersed under (or stays close to) the collector quasi-Fermi level. The electron injection from the collector into the RTD quantum well is very strong in our diodes and stays comparable to that from the emitter in the whole range of RTD operating biases. Our RTDs exhibit well pronounced negative-differential-conductance region and peak-to-valley current ratio around 1.8. We demonstrate operation of our diodes in RTD oscillators up to 1.46 THz. We also observe a fine structure in the emission spectra of our RTD oscillators, when they are working in the regime close to the onset of oscillations.
International Nuclear Information System (INIS)
Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R.; Storm, David F.; Meyer, David J.; Zhang, Weidong; Brown, Elliott R.
2016-01-01
AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm 2 and a peak-to-valley current ratio of ≈1.15 across different sizes.
Energy Technology Data Exchange (ETDEWEB)
Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R., E-mail: pberger@ieee.org [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Storm, David F.; Meyer, David J. [U.S. Naval Research Laboratory, Washington, DC 20375 (United States); Zhang, Weidong; Brown, Elliott R. [Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435 (United States)
2016-08-22
AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm{sup 2} and a peak-to-valley current ratio of ≈1.15 across different sizes.
Effect of Δ-isobar excitation on spin-dependent observables of elastic nucleon-deuteron scattering
International Nuclear Information System (INIS)
Nemoto, S.; Oryu, S.; Chmielewski, K.; Sauer, P.U.
2000-01-01
Δ-isobar excitation in the nuclear medium yields an effective three-nucleon force. A coupled-channel formulation with Δ-isobar excitation developed previously is used. The three-particle scattering equations are solved by a separable expansion of the two-baryon transition matrix for elastic nucleon-deuteron scattering. The effect of Δ-isobar excitation on the spin-dependent observables is studied at energies above 50 MeV nucleon lab energy. (author)
International Nuclear Information System (INIS)
Baishya, R.; Jamil, U.; Sarma, J. K.
2009-01-01
In this paper the spin-dependent singlet and nonsinglet structure functions have been obtained by solving Dokshitzer, Gribov, Lipatov, Altarelli, Parisi evolution equations in leading order and next to leading order in the small x limit. Here we have used Taylor series expansion and then the method of characteristics to solve the evolution equations. We have also calculated t and x evolutions of deuteron structure functions, and the results are compared with the SLAC E-143 Collaboration data.
Energy Technology Data Exchange (ETDEWEB)
Drews, Bjoern Holger; Gulkin, Daniel; Guelke, Joachim; Gebhard, Florian [University of Ulm, Center of Surgery, Department for Orthopedic Trauma, Hand and Reconstructive Surgery, Ulm (Germany); Merz, Cornelia; Huth, Jochen; Mauch, Frieder [Sportklinik Stuttgart GmbH, Stuttgart (Germany)
2017-10-15
Revision ACL reconstruction is becoming more frequent because of a 10% rate of re-ruptures and insufficiencies. Currently, computed tomography (CT) represents the gold standard in detecting and measuring the tunnels of the initial ACL reconstruction. The purpose of this study was to compare measurement results of CT and thin-sliced MRI sequences, which were modified to a high soft tissue-bone contrast. Prior to an ACL revision surgery, 16 consecutive patients had an MRI in addition to the standard CT scan. A dedicated 0.25-T Esaote G-Scan (Esaote Biomedica, Cologne, Germany) with a Turbo 3D T1 sequence was used for MRI. Tunnel diameters were measured at 11 defined points of interest. For the statistical evaluation, the Mann-Whitney U test for connected samples was used. Inter- and intraobserver reliability was additionally calculated. All measured diameters showed significant to highly significant correlations between both diagnostic tools (r = 0.7-0.98). In addition, there was no significant difference (p > 0.5) between the two techniques. Almost all diameters showed nearly perfect intraobserver reliability (ICC 0.8-0.97). Interobserver reliability showed an ICC of 0.91/0.92 for only one diameter in MRI and CT. Prior to ACL revision surgery, bone tunnel measurements can be done using a 3D T1-MRI sequence in low-field MRI. MRI measurements show the same accuracy as CT scans. Preoperative radiation exposure in mainly young patients could be reduced. Also the costs of an additional CT scan could be saved. (orig.)
Direct, coherent and incoherent intermediate state tunneling and scanning tunnel microscopy (STM)
International Nuclear Information System (INIS)
Halbritter, J.
1997-01-01
Theory and experiment in tunneling are still qualitative in nature, which hold true also for the latest developments in direct-, resonant-, coherent- and incoherent-tunneling. Those tunnel processes have recently branched out of the field of ''solid state tunnel junctions'' into the fields of scanning tunnel microscopy (STM), single electron tunneling (SET) and semiconducting resonant tunnel structures (RTS). All these fields have promoted the understanding of tunneling in different ways reaching from the effect of coherence, of incoherence and of charging in tunneling, to spin flip or inelastic effects. STM allows not only the accurate measurements of the tunnel current and its voltage dependence but, more importantly, the easy quantification via the (quantum) tunnel channel conductance and the distance dependence. This new degree of freedom entering exponentially the tunnel current allows an unique identification of individual tunnel channels and their quantification. In STM measurements large tunnel currents are observed for large distances d > 1 nm explainable by intermediate state tunneling. Direct tunneling with its reduced tunnel time and reduced off-site Coulomb charging bridges distances below 1 nm, only. The effective charge transfer process with its larger off-site and on-site charging at intermediate states dominates tunnel transfer in STM, biology and chemistry over distances in the nm-range. Intermediates state tunneling becomes variable range hopping conduction for distances larger than d > 2 nm, for larger densities of intermediate states n 1 (ε) and for larger temperatures T or voltages U, still allowing high resolution imaging
Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo
2017-10-26
The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.
DEFF Research Database (Denmark)
Koller, Sonja; Grifoni, Milena; Paaske, Jens
2012-01-01
We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge fluctuations can be quantitatively evaluated within...
Observation of Spin Hall Effect in Photon Tunneling via Weak Measurements
Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun
2014-01-01
Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications. PMID:25487043
Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland
2010-07-23
We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.
Observation of spin Hall effect in photon tunneling via weak measurements.
Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun
2014-12-09
Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications.
DEFF Research Database (Denmark)
Kaplunenko, V. K.; Larsen, Britt Hvolbæk; Mygind, Jesper
1994-01-01
on experimental and numerical investigations of a resonant step observed at a voltage corresponding to 600 GHz in the dc current-voltage characteristic of a parallel array of 20 identical small NbAl2O3Nb Josephson junctions interconnected by short sections of superconducting microstrip line. The junctions...... are mutually phase locked due to collective interaction with the line sections excited close to the half wavelength resonance. The phase locking range can be adjusted by means of an external dc magnetic field and the step size varies periodically with the magnetic field. The largest step corresponds...
Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi
2018-05-01
We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.
DEFF Research Database (Denmark)
Petersen, Nils Holger
2014-01-01
A chapter in a book about terminology within the field of medievalism: the chapter discusses the resonance of medieval music and ritual in modern (classical) music culture and liturgical practice.......A chapter in a book about terminology within the field of medievalism: the chapter discusses the resonance of medieval music and ritual in modern (classical) music culture and liturgical practice....
International Nuclear Information System (INIS)
Li, Guanqiang; Chen, Guangde; Peng, Ping; Cao, Zhenzhou; Ye, Honggang
2013-01-01
We investigate the resonant transmission of Dirac electrons through inhomogeneous band gap graphene with square superlattice potentials by transfer matrix method. The effects of the incident angle of the electrons, Fermi energy and substrate-induced Dirac gaps on the transmission are considered. It is found that the Dirac gap of graphene adds another degree of freedom with respect to the incident angle, the Fermi energy and the parameters of periodic superlattice potentials (i.e., the number, width and height of the barriers) for the transmission. In particular, the inhomogeneous Dirac gap induced by staggered substrates can be used to manipulate the transmission. The properties of the conductance and Fano factor at the resonant peaks are found to be affected by the gaps significantly. The results may be helpful for the practical application of graphene-based electronic devices
Klos, P.; Menéndez, J.; Gazit, D.; Schwenk, A.
2013-01-01
We perform state-of-the-art large-scale shell-model calculations of the structure factors for elastic spin-dependent WIMP scattering off 129,131Xe, 127I, 73Ge, 19F, 23Na, 27Al, and 29Si. This comprehensive survey covers the non-zero-spin nuclei relevant to direct dark matter detection. We include a pedagogical presentation of the formalism necessary to describe elastic and inelastic WIMP-nucleus scattering. The valence spaces and nuclear interactions employed have been previously used in nucl...
Dorda, Antonius; Schürrer, Ferdinand
2015-03-01
We present a novel numerical scheme for the deterministic solution of the Wigner transport equation, especially suited to deal with situations in which strong quantum effects are present. The unique feature of the algorithm is the expansion of the Wigner function in local basis functions, similar to finite element or finite volume methods. This procedure yields a discretization of the pseudo-differential operator that conserves the particle density on arbitrarily chosen grids. The high flexibility in refining the grid spacing together with the weighted essentially non-oscillatory (WENO) scheme for the advection term allows for an accurate and well-resolved simulation of the phase space dynamics. A resonant tunneling diode is considered as test case and a detailed convergence study is given by comparing the results to a non-equilibrium Green's functions calculation. The impact of the considered domain size and of the grid spacing is analyzed. The obtained convergence of the results towards a quasi-exact agreement of the steady state Wigner and Green's functions computations demonstrates the accuracy of the scheme, as well as the high flexibility to adjust to different physical situations.
Energy Technology Data Exchange (ETDEWEB)
Higo, M [Hazam Gumi, Ltd., Tokyo (Japan)
1991-10-25
A mountain tunneling method for rock-beds used to be applied mainly to construction works in the mountains under few restrictions by environmental problems. However, construction works near residential sreas have been increasing. There are such enviromental problems due to tunneling works as vibration, noise, lowering of ground-water level, and influences on other structures. This report mainly describes the measurement examples of vibration and noise accompanied with blasting and the effects of the measures to lessen such influences. When the tunneling works for the railroad was carried out on the natural ground mainly composed of basalt, vibration of the test blasting was measured at three stations with piezoelectric accelerometers. Then, ordinary blasting, mutistage blasting, and ABM blasting methods were used properly besed on the above results, and only a few complaints were made. In the different works, normal noise and low-frequency sound were mesured at 22 stations around the pit mouth. As countermeasures for noise, sound-proof sheets, walls, and single and double doors were installed and foundto be effective. 1 ref., 6 figs., 1 tab.
DEFF Research Database (Denmark)
an impetus or drive to that account: change, innovation, rupture, or discontinuity. Resonances: Historical Essays on Continuity and Change explores the historiographical question of the modes of interrelation between these motifs in historical narratives. The essays in the collection attempt to realize...
Mughabghab, Said
2018-01-01
Atlas of Neutron Resonances: Resonance Properties and Thermal Cross Sections Z= 1-60, Sixth Edition, contains an extensive list of detailed individual neutron resonance parameters for Z=1-60, as well as thermal cross sections, capture resonance integrals, average resonance parameters and a short survey of the physics of thermal and resonance neutrons. The long introduction contains: nuclear physics formulas aimed at neutron physicists; topics of special interest such as valence neutron capture, nuclear level density parameters, and s-, p-, and d-wave neutron strength functions; and various comparisons of measured quantities with the predictions of nuclear models, such as the optical model. As in the last edition, additional features have been added to appeal to a wider spectrum of users. These include: spin-dependent scattering lengths that are of interest to solid-state physicists, nuclear physicists and neutron evaluators; calculated and measured Maxwellian average 5-keV and 30-keV capture cross sections o...
International Nuclear Information System (INIS)
Beck, D.H.; Filippone, B.W.; Jourdan, J.
1988-01-01
It is possible to measure the deep-inelastic spin-dependent structure functions g 1 /sup p/(x) and g 1 /sup n/(x) for the proton and neutron using internal polarized hydrogen, deuterium, and 3 He targets of polarization 50% and thickness 10 14 to 10 15 cm -2 and the 60 mA longitudinally polarized 30 GeV electron beam in the HERA electron storage ring. The measurement of the deep-inelastic spin-structure of both isospin states of the nucleon at the same kinematics and using the same apparatus allows the Bjorken sum rule to be experimentally checked. In addition, it uniquely constrains the spin distribution of the u and d quarks as a function of x in any model of the nucleon. Possible target and detector configurations are described and an estimate of the accuracy of such a measurement is presented
Energy Technology Data Exchange (ETDEWEB)
Scopel, Stefano; Yu, Hyeonhye, E-mail: scopel@sogang.ac.kr, E-mail: skyh2yu@gmail.com [Department of Physics, Sogang University, Seoul (Korea, Republic of)
2017-04-01
We discuss strategies to make inferences on the thermal relic abundance of a Weakly Interacting Massive Particle (WIMP) when the same effective dimension-six operator that explains an experimental excess in direct detection is assumed to drive decoupling at freeze-out, and apply them to the explicit scenario of WIMP inelastic up-scattering with spin-dependent couplings to protons (proton-philic Spin-dependent Inelastic Dark Matter, pSIDM), a phenomenological set-up containing two Dark Matter (DM) particles χ{sub 1} and χ{sub 2} with masses m {sub χ}= m {sub χ{sub 1}} and m {sub χ{sub 2}}= m {sub χ}+δ that we have shown in a previous paper to explain the DAMA effect in compliance with the constraints from other detectors. We also update experimental constraints on pSIDM, extend the analysis to the most general spin-dependent momentum-dependent interactions allowed by non-relativistic Effective Field Theory (EFT), and consider for the WIMP velocity distribution in our Galaxy f ( v ) both a halo-independent approach and a standard Maxwellian. Under these conditions we find that the DAMA effect can be explained in terms of the particle χ{sub 1} in compliance with all the other constraints for all the analyzed EFT couplings and also for a Maxwellian f ( v ). As far as the relic abundance is concerned, we show that the problem of calculating it by using direct detection data to fix the model parameters is affected by a strong sensitivity on f ( v ) and by the degeneracy between the WIMP local density ρ{sub χ} and the WIMP-nucleon scattering cross section, since ρ{sub χ} must be rescaled with respect to the observed DM density in the neighborhood of the Sun when the calculated relic density Ω is smaller than the observed one Ω{sub 0}. As a consequence, a DM direct detection experiment is not directly sensitive to the physical cut-off scale of the EFT, but on some dimensional combination that does not depend on the actual value of Ω. However, such degeneracy
Deutsch, Maxime; Claiser, Nicolas; Pillet, Sébastien; Chumakov, Yurii; Becker, Pierre; Gillet, Jean Michel; Gillon, Béatrice; Lecomte, Claude; Souhassou, Mohamed
2012-11-01
New crystallographic tools were developed to access a more precise description of the spin-dependent electron density of magnetic crystals. The method combines experimental information coming from high-resolution X-ray diffraction (XRD) and polarized neutron diffraction (PND) in a unified model. A new algorithm that allows for a simultaneous refinement of the charge- and spin-density parameters against XRD and PND data is described. The resulting software MOLLYNX is based on the well known Hansen-Coppens multipolar model, and makes it possible to differentiate the electron spins. This algorithm is validated and demonstrated with a molecular crystal formed by a bimetallic chain, MnCu(pba)(H(2)O)(3)·2H(2)O, for which XRD and PND data are available. The joint refinement provides a more detailed description of the spin density than the refinement from PND data alone.
International Nuclear Information System (INIS)
Baktybaev, K.; Koilyk, N.; Ramankulov, K.
2006-01-01
Full text: Collective Schrodinger equations are applied to describe low-energy spectra of even-even nuclei [1]. Spectra for even-odd nuclei are calculated by coupling the single particle degrees of freedom to the collective degree of freedom of the core nucleus, which is of even-even type. The collective spin has a value of 3/2. This leads to the assumption that the linearized equation may be applied to describe nuclei with spin 3/2 in the ground state. Good description of the low energy spectra and electromagnetic transition probabilities can be obtained only with introduction of spin-dependent potentials, which apart from coordinates and momenta also depend on the matrices of the Clifford algebra arising in the linearization,. The interacting boson-fermion models (IBFM) [2] represent another approach to describe spectra of even-odd nuclei. For even-odd nuclei with spin 3/2 in the ground state one uses so-called j=3/2 - IBFM, which is also denoted as the U B (6)xU F (4) IBFM. In this paper we establish the relation between the matrices of the Clifford algebra, which arise in the linearization procedure, and the fermion operators of the j=3/2 IBFM. This allows us to establish a connection between the j=3/2 IBFM and spin dependent generalized collective model (SGCM). The results of the SGCM for Ir and Au nuclei are presented and compared with the results of the j=3/2 IBFM with a dynamical spin symmetry [3] present. In this respect we could apply the linearized collective Schrodinger equation and IBFM with arbitrary spin to all other even-odd nuclei. (author)
Energy Technology Data Exchange (ETDEWEB)
Kaptari, Leonya P. [University of Perugia (Italy); INFN-Perugia (Italy); Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Joint Inst. for Nuclear Research, Dubna (Russia); Del Dotto, Alessio [University of Rome, Rome (Italy); INFN-Roma (Italy); Pace, Emanuele [University of Rome (Italy); INFN-Tor Vergata (Italy); Salme, Giovanni [INFN-Roma (Italy); Scopetta, Sergio [University of Perugia (Italy); INFN-Perugia (Italy)
2014-03-01
The spin dependent spectral function, relevant to describe polarized electron scattering off polarized {sup 3}He, is studied, within the Plane Wave Impulse Approximation and taking into account final state interaction effects (FSI). In particular, the case of semi-inclusive deep inelastic scattering (SiDIS) is considered, evaluating the FSI of the hadronizing quark with the nuclear remnants. It is shown that particular kinematical regions can be selected to minimize the latter effects, so that parton distributions in the neutron can be accessed. On the other side, in the regions where FSI dominates, the considered reactions can elucidate the mechanism of hadronization of quarks during the propagation in the nuclear medium. It is shown that the obtained spin dependent spectral function can be directly applied to investigate the SiDIS reaction e-vector + {sup 3}He-vector to h+X, where the hadron h originates from the current fragmentation. Experiments of this type are being performed at JLab to extract neutron transverse momentum dependent parton distributions. As a case study, a different SiDIS process, with detection of slow (A-1) systems in the final state, is considered in more details, in order to establish when nuclear structure effects and FSI can be distinguished from elementary reactions on quasi-free nucleons. It is argued that, by a proper choice of kinematics, the origin of nuclear effects in polarized DIS phenomena and the details of the interaction between the hadronizing quark and the nuclear medium can be investigated at a level which is not reachable in inclusive deep inelastic scattering.
Sum rule measurements of the spin-dependent compton amplitude (nucleon spin structure at Q2 = 0)
International Nuclear Information System (INIS)
Babusci, D.; Giordano, G.; Baghaei, H.; Cichocki, A.; Blecher, M.; Breuer, M.; Commeaux, C.; Didelez, J.P.; Caracappa, A.; Fan, Q.
1995-01-01
Energy weighted integrals of the difference in helicity-dependent photo-production cross sections (σ 1/2 - σ 3/2 ) provide information on the nucleon's Spin-dependent Polarizability (γ), and on the spin-dependent part of the asymptotic forward Compton amplitude through the Drell-Hearn-Gerasimov (DHG) sum rule. (The latter forms the Q 2 =0 limit of recent spin-asymmetry experiments in deep-inelastic lepton-scattering.) There are no direct measurements of σ 1/2 or σ 3/2 , for either the proton or the neutron. Estimates from current π-photo-production multipole analyses, particularly for the proton-neutron difference, are in good agreement with relativistic-l-loop Chiral calculations (χPT) for γ but predict large deviations from the DHG sum rule. Either (a) both the 2-loop corrections to the Spin-Polarizability are large and the existing multipoles are wrong, or (b) modifications to the Drell-Hearn-Gerasimov sum rule are required to fully describe the isospin structure of the nucleon. The helicity-dependent photo-reaction amplitudes, for both the proton and the neutron, will be measured at LEGS from pion-threshold to 470 MeV. In these double-polarization experiments, circularly polarized photons from LEGS will be used with SPHICE, a new frozen-spin target consisting of rvec H · rvec D in the solid phase. Reaction channels will be identified in SASY, a large detector array covering about 80% of 4π. A high degree of symmetry in both target and detector will be used to minimize systematic uncertainties
Rong, Taotao; Yang, Lin-An; Yang, Lin; Hao, Yue
2018-01-01
In this work, we report an investigation of resonant tunneling diodes (RTDs) with lattice-matched and polarization-matched AlInN/GaN heterostructures using the numerical simulation. Compared with the lattice-matched AlInN/GaN RTDs, the RTDs based on polarization-matched AlInN/GaN hetero-structures exhibit symmetrical conduction band profiles due to eliminating the polarization charge discontinuity, which achieve the equivalence of double barrier transmission coefficients, thereby the relatively high driving current, the high symmetry of current density, and the high peak-to-valley current ratio (PVCR) under the condition of the positive and the negative sweeping voltages. Simulations show that the peak current density approaches 1.2 × 107 A/cm2 at the bias voltage of 0.72 V and the PVCR approaches 1.37 at both sweeping voltages. It also shows that under the condition of the same shallow energy level, when the trap density reaches 1 × 1019 cm-3, the polarization-matched RTDs still have acceptable negative differential resistance (NDR) characteristics, while the NDR characteristics of lattice-matched RTDs become irregular. After introducing the deeper energy level of 1 eV into the polarization-matched and lattice-matched RTDs, 60 scans are performed under the same trap density. Simulation results show that the degradation of the polarization-matched RTDs is 22%, while lattice-matched RTDs have a degradation of 55%. It can be found that the polarization-matched RTDs have a greater defect tolerance than the lattice-matched RTDs, which is beneficial to the available manufacture of actual terahertz RTD devices.
Coulomb singularity effects in tunnelling spectroscopy of individual impurities
Arseyev, P. I.; Maslova, N. S.; Panov, V. I.; Savinov, S. V.
2002-01-01
Non-equilibrium Coulomb effects in resonant tunnelling processes through deep impurity states are analyzed. It is shown that Coulomb vertex corrections to the tunnelling transfer amplitude lead to a power-law singularity in current- voltage characteristics
Kanada-En'yo, Yoshiko; Isaka, Masahiro; Motoba, Toshio
2018-01-01
Energy spectra of $0s$-orbit $\\Lambda$ states in $p$-shell $\\Lambda$ hypernuclei ($^{A}_\\Lambda Z$) and those in $^{19}_{\\Lambda}\\textrm{F}$ are studied with the microscopic cluster model and antisymmetrized molecular dynamics using the $G$-matrix effective $\\Lambda N$ ($\\Lambda NG$) interactions. Spin-dependent terms of the ESC08a version of the $\\Lambda NG$ interactions are tested and phenomenologically tuned to reproduce observed energy spectra in $p$-shell $^{A}_\\Lambda Z$. Spin-dependent...
Uncooled tunneling infrared sensor
Kenny, Thomas W. (Inventor); Kaiser, William J. (Inventor); Podosek, Judith A. (Inventor); Vote, Erika C. (Inventor); Muller, Richard E. (Inventor); Maker, Paul D. (Inventor)
1995-01-01
An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.
International Nuclear Information System (INIS)
Dai, Jian-Qing; Zhang, Hu; Song, Yu-Min
2014-01-01
We perform first-principles electronic structure and spin-dependent transport calculations of a multiferroic tunnel junction (MFTJ) with an epitaxial Fe/PbTiO 3 /Fe heterostructure. We predict a large positive spin-polarization (SP) and an intriguing giant inverse tunneling magnetoresistance (TMR) ratio in this tunnel junction. We demonstrate that the tunneling properties are determined by ferroelectric (FE) polarization screening and electronic reconstruction at the interface with lower electrostatic potential. The intricate complex band structure of PbTiO 3 , in particular the lowest decay rates concerning Pb 6p z and Ti 3d z2 states near the Γ ¯ point, gives rise to the large positive SP of the tunneling current in the parallel magnetic configuration. However, the giant inverse TMR ratio is attributed to the minority-spin electrons of the interfacial Ti 3d xz +3d yz orbitals which have considerably weight in the extended area around the Γ ¯ point at the Fermi energy and causes remarkable contributions to the conductance in the antiparallel magnetic configuration. - Highlights: • We study spin-dependent tunneling in Fe/PbTiO 3 /Fe multiferroic tunnel junction. • We find a large positive spin polarization in the parallel magnetic configuration. • An intriguing giant inverse TMR ratio (about −2000%) is predicted. • Complex band structure of PbTiO 3 causes the large positive spin polarization. • Negative TMR is due to minority-spin electrons of interfacial Ti d xz +d yz orbitals
Energy Technology Data Exchange (ETDEWEB)
Stone, Taylor J. [Charlotte Radiology, Charlotte, NC (United States); Rosenberg, Zehava S.; Ciavarra, Gina; Bencardino, Jenny T. [New York Langone Medical Center / Hospital for Joint Diseases, New York, NY (United States); Velez, Zoraida Restrepo [Cedimed-Dinamica, Medellin (Colombia); Prost, Roberto [Marino Hospital ASL Cagliari, Cagliari (Italy)
2016-03-15
To evaluate the position of the peroneus longus (PL) tendon relative to the cuboid tuberosity and cuboid tunnel during ankle dorsiflexion and plantarflexion using ultrasound and MRI. The study population included two groups: 20 feet of 10 asymptomatic volunteers who underwent prospective dynamic ultrasound and 55 ankles found through retrospective review of routine ankle MRI examinations. The location of the PL tendon at the cuboid tuberosity and cuboid tunnel was designated as completely within the tunnel, indeterminate, or subluxed with respect to ankle dorsiflexion and plantarflexion. On dynamic ultrasound, the PL tendon was perched plantar to the cuboid tuberosity in dorsiflexion, and glided to enter the cuboid tunnel distal to the tuberosity in plantarflexion in all 20 feet. On the MRI evaluation, there was a statistically significant difference (p = 0.0006) in the location of the PL tendon between the ankles scanned in dorsiflexion and plantarflexion. Based on our findings on ultrasound and MRI, the PL tendon can glide in and out of the cuboid tunnel along the cuboid tuberosity depending on ankle position. Thus, ''subluxation'' of the tendon as it curves to enter the cuboid tunnel, which to the best of our knowledge has not yet been described, should be recognized as a normal, position-dependent phenomenon and not be reported as pathology. (orig.)
International Nuclear Information System (INIS)
Stone, Taylor J.; Rosenberg, Zehava S.; Ciavarra, Gina; Bencardino, Jenny T.; Velez, Zoraida Restrepo; Prost, Roberto
2016-01-01
To evaluate the position of the peroneus longus (PL) tendon relative to the cuboid tuberosity and cuboid tunnel during ankle dorsiflexion and plantarflexion using ultrasound and MRI. The study population included two groups: 20 feet of 10 asymptomatic volunteers who underwent prospective dynamic ultrasound and 55 ankles found through retrospective review of routine ankle MRI examinations. The location of the PL tendon at the cuboid tuberosity and cuboid tunnel was designated as completely within the tunnel, indeterminate, or subluxed with respect to ankle dorsiflexion and plantarflexion. On dynamic ultrasound, the PL tendon was perched plantar to the cuboid tuberosity in dorsiflexion, and glided to enter the cuboid tunnel distal to the tuberosity in plantarflexion in all 20 feet. On the MRI evaluation, there was a statistically significant difference (p = 0.0006) in the location of the PL tendon between the ankles scanned in dorsiflexion and plantarflexion. Based on our findings on ultrasound and MRI, the PL tendon can glide in and out of the cuboid tunnel along the cuboid tuberosity depending on ankle position. Thus, ''subluxation'' of the tendon as it curves to enter the cuboid tunnel, which to the best of our knowledge has not yet been described, should be recognized as a normal, position-dependent phenomenon and not be reported as pathology. (orig.)
Adams, D; Adeva, B; Akdogan, T; Arik, E; Arvidson, A; Badelek, B; Ballintijn, M K; Bardin, Dimitri Yuri; Bardin, G; Baum, G; Berglund, P; Betev, L; Bird, I G; Birsa, R; Björkholm, P; Bonner, B E; De Botton, N R; Boutemeur, M; Bradamante, Franco; Bravar, A; Bressan, A; Bültmann, S; Burtin, E; Cavata, C; Crabb, D; Cranshaw, J; Çuhadar-Dönszelmann, T; Dalla Torre, S; Van Dantzig, R; Derro, B R; Deshpande, A A; Dhawan, S K; Dulya, C M; Dyring, A; Eichblatt, S; Faivre, Jean-Claude; Fasching, D; Feinstein, F; Fernández, C; Frois, Bernard; Gallas, A; Garzón, J A; Gaussiran, T; Giorgi, M A; von Goeler, E; Gómez, F; Gracia, G; De Groot, N; Grosse-Perdekamp, M; Von Harrach, D; Hasegawa, T; Hautle, P; Hayashi, N; Heusch, C A; Horikawa, N; Hughes, V W; Igo, G; Ishimoto, S; Iwata, T; Kabuss, E M; Kageya, T; Kalinovskaya, L V; Karev, A G; Kessler, H J; Ketel, T; Kiryluk, J; Kishi, A; Kiselev, Yu F; Klostermann, L; Krämer, Dietrich; Krivokhizhin, V G; Kröger, W; Kukhtin, V V; Kurek, K; Kyynäräinen, J; Lamanna, M; Landgraf, U; Le Goff, J M; Lehár, F; de Lesquen, A; Lichtenstadt, J; Lindqvist, T; Litmaath, M; Loewe, M; Magnon, A; Mallot, G K; Marie, F; Martin, A; Martino, J; Matsuda, T; Mayes, B W; McCarthy, J S; Medved, K S; Van Middelkoop, G; Miller, D; Mori, K; Moromisato, J H; Nagaitsev, A P; Nassalski, J P; Naumann, Lutz; Niinikoski, T O; Oberski, J; Ogawa, A; Ozben, C; Parks, D P; Perrot-Kunne, F; Peshekhonov, V D; Piegaia, R; Pinsky, L; Platchkov, S K; Pló, M; Polec, J; Pose, D; Postma, H; Pretz, J; Puntaferro, R; Pussieux, T; Pyrlik, J; Rädel, G; Rijllart, A; Roberts, J B; Rock, S E; Rodríguez, M; Rondio, Ewa; Rosado, A; Sabo, I; Saborido, J; Sandacz, A; Savin, I A; Schiavon, R P; Schüler, K P; Seitz, R; Semertzidis, Y K; Sever, F; Shanahan, P; Sichtermann, E P; Simeoni, F; Smirnov, G I; Staude, A; Steinmetz, A; Steigler, U; Stuhrmann, H B; Szleper, M; Teichert, K M; Tessarotto, F; Tlaczala, W; Trentalange, S; Tripet, A; Ünel, G; Velasco, M; Vogt, J; Voss, Rüdiger; Weinstein, R; Whitten, C; Windmolders, R; Willumeit, R; Wislicki, W; Witzmann, A; Yañez, A; Ylöstalo, J; Zanetti, A M; Zaremba, K; Zhao, J
1997-01-01
We present a new measurement of the spin-dependent structure function $g_{1}^{\\rm d}$ of the deuteron from deep inelastic scattering of 190 GeV polarized muons on polarized deuterons. The results are combined with our previous measurements of $g_{1}^{\\rm d}$. A perturbative QCD evolution in next-to-leading order is used to compute $g_{1}^{\\rm d}(x)$ at a constant $Q^{2}$. At $Q^{2} = 10$ GeV$^{2}$, we obtain a first moment $\\Gamma_{1}^{\\rm d} = \\int_{0}^{1} g_{1}^{\\rm d}{\\rm d}x = 0.041 \\pm 0.008$, a flavour-singlet axial charge of the nucleon $a_{0} = 0.30 \\pm 0.08$, and an axial charge of the strange quark $a_{s} = -0.09 \\pm 0.03$. Using our earlier determination of $\\Gamma_{1}^{\\rm p}$, we obtain $\\Gamma_1^{\\rm p} - \\Gamma_1^{\\rm n} = 0.183 \\pm 0.035$ at $Q^2 = 10\\,\\mbox{GeV}^2$. This result is in agreement with the Bjorken sum rule which predicts $\\Gamma_1^{\\rm p} - \\Gamma_1^{\\rm n} = 0.186 \\pm 0.002$ at the same $Q^2$.
International Nuclear Information System (INIS)
Zhou, Benliang; Zhou, Benhu; Liu, Guang; Guo, Dan; Zhou, Guanghui
2016-01-01
We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.
The Spin-dependent Structure Function of the Proton $g_{1}^p$ and a Test of the Bjorken Sum Rule
Alekseev, M.G.; Alexandrov, Yu.; Alexeev, G.D.; Amoroso, A.; Austregesilo, A.; Badelek, B.; Balestra, F.; Ball, J.; Barth, J.; Baum, G.; Bedfer, Y.; Bernhard, J.; Bertini, R.; Bettinelli, M.; Birsa, R.; Bisplinghoff, J.; Bordalo, P.; Bradamante, F.; Bravar, A.; Bressan, A.; Brona, G.; Burtin, E.; Bussa, M.P.; Chaberny, D.; Cotic, D.; Chiosso, M.; Chung, S.U.; Cicuttin, A.; Colantoni, M.; Crespo, M.L.; Dalla Torre, S.; Das, S.; Dasgupta, S.S.; Denisov, O.Yu.; Dhara, L.; Diaz, V.; Donskov, S.V.; Doshita, N.; Duic, V.; Dunnweber, W.; Efremov, A.; El Alaoui, A.; Eversheim, P.D.; Eyrich, W.; Faessler, M.; Ferrero, A.; Filin, A.; Finger, M.; Finger, M., Jr.; Fischer, H.; Franco, C.; Friedrich, J.M.; Garfagnini, R.; Gautheron, F.; Gavrichtchouk, O.P.; Gazda, R.; Gerassimov, S.; Geyer, R.; Giorgi, M.; Gnesi, I.; Gobbo, B.; Goertz, S.; Grabmuller, S.; Grasso, A.; Grube, B.; Gushterski, R.; Guskov, A.; Haas, F.; von Harrach, D.; Hasegawa, T.; Heinsius, F.H.; Hermann, R.; Herrmann, F.; Hess, C.; Hinterberger, F.; Horikawa, N.; Hoppner, Ch.; d'Hose, N.; Ilgner, C.; Ishimoto, S.; Ivanov, O.; Ivanshin, Yu.; Iwata, T.; Jahn, R.; Jasinski, P.; Jegou, G.; Joosten, R.; Kabuss, E.; Kafer, W.; Kang, D.; Ketzer, B.; Khaustov, G.V.; Khokhlov, Yu.A.; Kisselev, Yu.; Klein, F.; Klimaszewski, K.; Koblitz, S.; Koivuniemi, J.H.; Kolosov, V.N.; Kondo, K.; Konigsmann, K.; Konopka, R.; Konorov, I.; Konstantinov, V.F.; Korzenev, A.; Kotzinian, A.M.; Kouznetsov, O.; Kowalik, K.; Kramer, M.; Kral, A.; Kroumchtein, Z.V.; Kuhn, R.; Kunne, F.; Kurek, K.; Lauser, L.; Le Goff, J.M.; Lednev, A.A.; Lehmann, A.; Levorato, S.; Lichtenstadt, J.; Liska, T.; Maggiora, A.; Maggiora, M.; Magnon, A.; Mallot, G.K.; Mann, A.; Marchand, C.; Marroncle, J.; Martin, A.; Marzec, J.; Massmann, F.; Matsuda, T.; Maximov, A.N.; Meyer, W.; Michigami, T.; Mikhailov, Yu.V.; Moinester, M.A.; Mutter, A.; Nagaytsev, A.; Nagel, T.; Nassalski, J.; Negrini, T.; Nerling, F.; Neubert, S.; Neyret, D.; Nikolaenko, V.I.; Nunes, A.S.; Olshevsky, A.G.; Ostrick, M.; Padee, A.; Panknin, R.; Panzieri, D.; Parsamyan, B.; Paul, S.; Pawlukiewicz-Kaminska, B.; Perevalova, E.; Pesaro, G.; Peshekhonov, D.V.; Piragino, G.; Platchkov, S.; Pochodzalla, J.; Polak, J.; Polyakov, V.A.; Pontecorvo, G.; Pretz, J.; Quintans, C.; Rajotte, J.F.; Ramos, S.; Rapatsky, V.; Reicherz, G.; Richter, A.; Robinet, F.; Rocco, E.; Rondio, E.; Ryabchikov, D.I.; Samoylenko, V.D.; Sandacz, A.; Santos, H.; Sapozhnikov, M.G.; Sarkar, S.; Savin, I.A.; Sbrizzai, G.; Schiavon, P.; Schill, C.; Schmitt, L.; Schluter, T.; Schopferer, S.; Schroder, W.; Shevchenko, O.Yu.; Siebert, H.W.; Silva, L.; Sinha, L.; Sissakian, A.N.; Slunecka, M.; Smirnov, G.I.; Sosio, S.; Sozzi, F.; Srnka, A.; Stolarski, M.; Sulc, M.; Sulej, R.; Takekawa, S.; Tessaro, S.; Tessarotto, F.; Teufel, A.; Tkatchev, L.G.; Uhl, S.; Uman, I.; Virius, M.; Vlassov, N.V.; Vossen, A.; Weitzel, Q.; Windmolders, R.; Wislicki, W.; Wollny, H.; Zaremba, K.; Zavertyaev, M.; Zemlyanichkina, E.; Ziembicki, M.; Zhao, J.; Zhuravlev, N.; Zvyagin, A.
2010-01-01
The inclusive double-spin asymmetry, $A_{1}^{p}$, has been measured at COMPASS in deepinelastic polarised muon scattering off a large polarised NH3 target. The data, collected in the year 2007, cover the range Q2 > 1 (GeV/c)^2, 0.004 < x < 0.7 and improve the statistical precision of g_{1}^{p}(x) by a factor of two in the region x < 0.02. The new proton asymmetries are combined with those previously published for the deuteron to extract the non-singlet spin-dependent structure function g_1^NS(x,Q2). The isovector quark density, Delta_q_3(x,Q2), is evaluated from a NLO QCD fit of g_1^NS. The first moment of Delta_q3 is in good agreement with the value predicted by the Bjorken sum rule and corresponds to a ratio of the axial and vector coupling constants g_A/g_V = 1.28+-0.07(stat)+-0.10(syst).
Energy Technology Data Exchange (ETDEWEB)
Zhou, Benliang [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Benhu [Department of Physics, Shaoyang University, Shaoyang 422001 (China); Liu, Guang; Guo, Dan [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Guanghui, E-mail: ghzhou@hunnu.edu.cn [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China)
2016-11-01
We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.
Spin heat accumulation induced by tunneling from a ferromagnet.
Vera-Marun, I J; van Wees, B J; Jansen, R
2014-02-07
An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.
Shang, Liangliang; He, Yangle; Lian, Jingwei; Pan, Yusi
2018-05-01
The Weakly Interacting Massive Particle (WIMP) has been one of the most attractive candidates for Dark Matter (DM), and the lightest neutralino (\\widetilde{χ }^0_1) in the Next-to-Minimal Supersymmetric Standard Model (NMSSM) is an interesting realization of the WIMP framework. The Galactic Center Excess (GCE) indicated from the analysis of the photon data of the Fermi Large Area Telescope (Fermi-LAT) in the gamma-ray wavelength ≲ 1 fm, can be explained by WIMP DM annihilations in the sky, as shown in many existing works. In this work we consider an interesting scenario in the Z_3-NMSSM where the singlet S and Singlino \\widetilde{S}^0 components play important roles in the Higgs and DM sector. Guided by our analytical arguments, we perform a sophisticated scan over the NMSSM parameter space by considering various observables such as the Standard Model (SM) Higgs data measured by the ATLAS and CMS experiments at the Large Hadron Collider (LHC), and the B-physics observables BR(B_s→ X_sγ ) and BR(B_s→ μ ^+μ ^-). We first collect samples which can explain the GCE well while passing all constraints we consider except for the DM direct detection (DD) bounds from XENON1T and PandaX-II experiments. We analyze the features of these samples suitable for the GCE interpretation and find that \\widetilde{χ }^0_1 DM are mostly Singlino-like and annihilation products are mostly the bottom quark pairs \\bar{b}b through a light singlet-like CP-odd Higgs A_1. Moreover, a good fit to the GCE spectrum generically requires sizable DM annihilation rates 0 in today's Universe. However, the correlation between the coupling C_{A_1 b\\bar{b}} in 0 and the coupling C_{Z \\widetilde{χ }^0_1 \\widetilde{χ }^0_1} in DM-neutron Spin Dependent (SD) scattering rate σ ^{SD}_{\\widetilde{χ }^0_1-N} makes all samples we obtain for GCE explanation get excluded by the PandaX-II results. Although the DM resonant annihilation scenarios may be beyond the reach of our analytical
Final COMPASS results on the deuteron spin-dependent structure function g1d and the Bjorken sum rule
Directory of Open Access Journals (Sweden)
C. Adolph
2017-06-01
Full Text Available Final results are presented from the inclusive measurement of deep-inelastic polarised-muon scattering on longitudinally polarised deuterons using a 6LiD target. The data were taken at 160 GeV beam energy and the results are shown for the kinematic range 1(GeV/c24GeV/c2 in the mass of the hadronic final state. The deuteron double-spin asymmetry A1d and the deuteron longitudinal-spin structure function g1d are presented in bins of x and Q2. Towards lowest accessible values of x, g1d decreases and becomes consistent with zero within uncertainties. The presented final g1d values together with the recently published final g1p values of COMPASS are used to again evaluate the Bjorken sum rule and perform the QCD fit to the g1 world data at next-to-leading order of the strong coupling constant. In both cases, changes in central values of the resulting numbers are well within statistical uncertainties. The flavour-singlet axial charge a0, which is identified in the MS‾ renormalisation scheme with the total contribution of quark helicities to the nucleon spin, is extracted at next-to-leading order accuracy from only the COMPASS deuteron data: a0(Q2=3(GeV/c2=0.32±0.02stat±0.04syst±0.05evol. Together with the recent results on the proton spin structure function g1p, the results on g1d constitute the COMPASS legacy on the measurements of g1 through inclusive spin-dependent deep inelastic scattering.
Modeling of inter-ribbon tunneling in graphene
Van de Put, Maarten L.; Vandenberghe, William G.; Sorée, Bart; Magnus, Wim; Fischetti, Massimo
2015-01-01
The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important factor determining the tunneling current between small (nm) ribbons. The quasi-one dimensional nature of graphene nanoribbons is shown to result in resonant tunneling.
Akerib, D. S.; Araújo, H. M.; Bai, X.; Bailey, A. J.; Balajthy, J.; Beltrame, P.; Bernard, E. P.; Bernstein, A.; Biesiadzinski, T. P.; Boulton, E. M.; Bradley, A.; Bramante, R.; Cahn, S. B.; Carmona-Benitez, M. C.; Chan, C.; Chapman, J. J.; Chiller, A. A.; Chiller, C.; Currie, A.; Cutter, J. E.; Davison, T. J. R.; de Viveiros, L.; Dobi, A.; Dobson, J. E. Y.; Druszkiewicz, E.; Edwards, B. N.; Faham, C. H.; Fiorucci, S.; Gaitskell, R. J.; Gehman, V. M.; Ghag, C.; Gibson, K. R.; Gilchriese, M. G. D.; Hall, C. R.; Hanhardt, M.; Haselschwardt, S. J.; Hertel, S. A.; Hogan, D. P.; Horn, M.; Huang, D. Q.; Ignarra, C. M.; Ihm, M.; Jacobsen, R. G.; Ji, W.; Kazkaz, K.; Khaitan, D.; Knoche, R.; Larsen, N. A.; Lee, C.; Lenardo, B. G.; Lesko, K. T.; Lindote, A.; Lopes, M. I.; Malling, D. C.; Manalaysay, A.; Mannino, R. L.; Marzioni, M. F.; McKinsey, D. N.; Mei, D.-M.; Mock, J.; Moongweluwan, M.; Morad, J. A.; Murphy, A. St. J.; Nehrkorn, C.; Nelson, H. N.; Neves, F.; O'Sullivan, K.; Oliver-Mallory, K. C.; Ott, R. A.; Palladino, K. J.; Pangilinan, M.; Pease, E. K.; Phelps, P.; Reichhart, L.; Rhyne, C.; Shaw, S.; Shutt, T. A.; Silva, C.; Solovov, V. N.; Sorensen, P.; Stephenson, S.; Sumner, T. J.; Szydagis, M.; Taylor, D. J.; Taylor, W.; Tennyson, B. P.; Terman, P. A.; Tiedt, D. R.; To, W. H.; Tripathi, M.; Tvrznikova, L.; Uvarov, S.; Verbus, J. R.; Webb, R. C.; White, J. T.; Whitis, T. J.; Witherell, M. S.; Wolfs, F. L. H.; Yazdani, K.; Young, S. K.; Zhang, C.; LUX Collaboration
2016-04-01
We present experimental constraints on the spin-dependent WIMP (weakly interacting massive particle)-nucleon elastic cross sections from LUX data acquired in 2013. LUX is a dual-phase xenon time projection chamber operating at the Sanford Underground Research Facility (Lead, South Dakota), which is designed to observe the recoil signature of galactic WIMPs scattering from xenon nuclei. A profile likelihood ratio analysis of 1.4 ×104 kg day of fiducial exposure allows 90% C.L. upper limits to be set on the WIMP-neutron (WIMP-proton) cross section of σn=9.4 ×10-41 cm2 (σp=2.9 ×10-39 cm2 ) at 33 GeV /c2 . The spin-dependent WIMP-neutron limit is the most sensitive constraint to date.
Li, Dongde; Wu, Di; Zhang, Xiaojiao; Zeng, Bowen; Li, Mingjun; Duan, Haiming; Yang, Bingchu; Long, Mengqiu
2018-05-01
The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni; dcdmp = 2,3-dicyano-5,6-dimercaptopyrazyne) molecular devices based on zigzag graphene nanoribbon (ZGNR) electrodes were investigated by density functional theory combined nonequilibrium Green's function method (DFT-NEGF). Our results show that the spin-dependent transport properties of the M(dcdmp)2 molecular devices can be controlled by the spin configurations of the ZGNR electrodes, and the central 3d-transition metal atom can introduce a larger magnetism than that of the nonferrous metal one. Moreover, the perfect spin filtering effect, negative differential resistance, rectifying effect and magnetic resistance phenomena can be observed in our proposed M(dcdmp)2 molecular devices.
Burton, J D; Tsymbal, E Y
2011-04-15
A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.
Martinez, Isidoro; Cascales, Juan Pedro; Hong, Jhen-Yong; Lin, Minn-Tsong; Prezioso, Mirko; Riminucci, Alberto; Dediu, Valentin A.; Aliev, Farkhad G.
2016-10-01
The possible influence of internal barrier dynamics on spin, charge transport and their fluctuations in organic spintronics remains poorly understood. Here we present investigation of the electron transport and low frequency noise at temperatures down to 0.3K in magnetic tunnel junctions with an organic PTCDA barriers with thickness up to 5 nm in the tunneling regime and with 200 nm thick Alq3 barrier in the hopping regime. We observed high tunneling magneto-resistance at low temperatures (15-40%) and spin dependent super-poissonian shot noise in organic magnetic tunnel junctions (OMTJs) with PTCDA. The Fano factor exceeds 1.5-2 values which could be caused by interfacial states controlled by spin dependent bunching in the tunneling events through the molecules.1 The bias dependence of the low frequency noise in OMTJs with PTCDA barriers which includes both 1/f and random telegraph noise activated at specific biases will also be discussed. On the other hand, the organic junctions with ferromagnetic electrodes and thick Alq3 barriers present sub-poissonian shot noise which depends on the temperature, indicative of variable range hopping.
Dielectric Sensors Based on Electromagnetic Energy Tunneling
Siddiqui, Omar; Kashanianfard, Mani; Ramahi, Omar
2015-01-01
We show that metallic wires embedded in narrow waveguide bends and channels demonstrate resonance behavior at specific frequencies. The electromagnetic energy at these resonances tunnels through the narrow waveguide channels with almost no propagation losses. Under the tunneling behavior, high-intensity electromagnetic fields are produced in the vicinity of the metallic wires. These intense field resonances can be exploited to build highly sensitive dielectric sensors. The sensor operation is explained with the help of full-wave simulations. A practical setup consisting of a 3D waveguide bend is presented to experimentally observe the tunneling phenomenon. The tunneling frequency is predicted by determining the input impedance minima through a variational formula based on the Green function of a probe-excited parallel plate waveguide. PMID:25835188
Dielectric Sensors Based on Electromagnetic Energy Tunneling
Directory of Open Access Journals (Sweden)
Omar Siddiqui
2015-03-01
Full Text Available We show that metallic wires embedded in narrow waveguide bends and channels demonstrate resonance behavior at specific frequencies. The electromagnetic energy at these resonances tunnels through the narrow waveguide channels with almost no propagation losses. Under the tunneling behavior, high-intensity electromagnetic fields are produced in the vicinity of the metallic wires. These intense field resonances can be exploited to build highly sensitive dielectric sensors. The sensor operation is explained with the help of full-wave simulations. A practical setup consisting of a 3D waveguide bend is presented to experimentally observe the tunneling phenomenon. The tunneling frequency is predicted by determining the input impedance minima through a variational formula based on the Green function of a probe-excited parallel plate waveguide.
Determination of the thickness of Al2O3 barriers in magnetic tunnel junctions
International Nuclear Information System (INIS)
Buchanan, J.D.R.; Hase, T.P.A.; Tanner, B.K.; Hughes, N.D.; Hicken, R.J.
2002-01-01
The barrier thickness in magnetic spin-dependent tunnel junctions with Al 2 O 3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al 2 O 3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density-voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness
Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions
International Nuclear Information System (INIS)
Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.
2015-01-01
The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown
Czech Academy of Sciences Publication Activity Database
Lindsay, S.; He, J.; Sankey, O.; Hapala, Prokop; Jelínek, Pavel; Zhang, P.; Chang, S.; Huang, S.
2010-01-01
Roč. 21, č. 26 (2010), 262001/1-262001/12 ISSN 0957-4484 R&D Projects: GA ČR GA202/09/0545 Institutional research plan: CEZ:AV0Z10100521 Keywords : STM * tunneling current * molecular electronics * DFT calculations Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.644, year: 2010
International Nuclear Information System (INIS)
Yang, Zhi; Ouyang, Bin; Lan, Guoqing; Xu, Li-Chun; Liu, Ruiping; Liu, Xuguang
2017-01-01
Using density functional theory and the non-equilibrium Green’s function method, we investigate the spin-dependent transport and optoelectronic properties of the graphyne-based molecular magnetic tunnel junctions (MMTJs). We find that these MMTJs exhibit an outstanding tunneling magnetoresistance (TMR) effect. The TMR value is as high as 10 6 %. When the magnetization directions of two electrodes are antiparallel under positive or negative bias voltages, two kinds of pure spin currents can be obtained in the systems. Furthermore, under the irradiation of infrared, visible or ultraviolet light, spin-polarized photocurrents can be generated in the MMTJs, but the corresponding microscopic mechanisms are different. More importantly, if the magnetization directions of two electrodes are antiparallel, the photocurrents with different spins are spatially separated, appearing at different electrodes. This phenomenon provides a new way to simultaneously generate two spin currents. (paper)
Enhanced tunneling through nonstationary barriers
International Nuclear Information System (INIS)
Palomares-Baez, J. P.; Rodriguez-Lopez, J. L.; Ivlev, B.
2007-01-01
Quantum tunneling through a nonstationary barrier is studied analytically and by a direct numerical solution of Schroedinger equation. Both methods are in agreement and say that the main features of the phenomenon can be described in terms of classical trajectories which are solutions of Newton's equation in complex time. The probability of tunneling is governed by analytical properties of a time-dependent perturbation and the classical trajectory in the plane of complex time. Some preliminary numerical calculations of Euclidean resonance (an easy penetration through a classical nonstationary barrier due to an underbarrier interference) are presented
International Nuclear Information System (INIS)
1998-11-01
This book introduces history of tunnel in ancient times, the middle ages and modern times, survey of tunnel and classification of bedrock like environment survey of position, survey of the ground, design of tunnel on basic thing of the design, and design of tunnel of bedrock, analysis of stability of tunnel and application of the data, construction of tunnel like lattice girder and steel fiber reinforced shot crete, and maintenance control and repair of tunnel.
Zemlyanichkina, Elena
2014-01-01
New results of the double spin asymmetry A p 1 and the spin-dependent structure function of the proton g p 1 as a function of x Bj and Q 2 will be presented. New COMPASS data on longitudinal polarized NH 3 target were collected during the year 2011 with a beam of positive muons with energy E = 200 GeV. It allows us to cover low x region down to 0 : 0025 in the range Q 2 > 1 GeV = c 2 for the first time
Ageev, E.S.; Alexandrov, Yu.; Alexeev, G.D.; Amoroso, A.; Badelek, B.; Balestra, F.; Ball, J.; Baum, G.; Bedfer, Y.; Berglund, P.; Bernet, C.; Bertini, R.; Birsa, R.; Bisplinghoff, J.; Bordalo, P.; Bradamante, F.; Bravar, A.; Bressan, A.; Burtin, E.; Bussa, M.P.; Bytchkov, V.N.; Cerini, L.; Chapiro, A.; Cicuttin, A.; Colantoni, M.; Colavita, A.A.; Costa, S.; Crespo, M.L.; d'Hose, N.; Dalla Torre, S.; Dasgupta, S.S.; De Masi, R.; Dedek, N.; Denisov, O.Yu.; Dhara, L.; Diaz Kavka, V.; Dinkelbach, A.M.; Dolgopolov, A.V.; Donskov, S.V.; Dorofeev, V.A.; Doshita, N.; Duic, V.; Dunnweber, W.; Ehlers, J.; Eversheim, P.D.; Eyrich, W.; Fabro, M.; Faessler, M.; Falaleev, V.; Fauland, P.; Ferrero, A.; Ferrero, L.; Finger, M.; Finger, M., Jr.; Fischer, H.; Franz, J.; Friedrich, J.M.; Frolov, V.; Fuchs, U.; Garfagnini, R.; Gautheron, F.; Gavrichtchouk, O.P.; Gerassimov, S.; Geyer, R.; Giorgi, M.; Gobbo, B.; Goertz, S.; Gorin, A.M.; Grajek, O.A.; Grasso, A.; Grube, B.; Grunemaier, A.; Hannappel, J.; von Harrach, D.; Hasegawa, T.; Hedicke, S.; Heinsius, F.H.; Hermann, R.; He, C.; Hinterberger, F.; von Hodenberg, M.; Horikawa, N.; Horikawa, S.; Ijaduola, R.B.; Ilgner, C.; Ioukaev, A.I.; Ishimoto, S.; Ivanov, O.; Iwata, T.; Jahn, R.; Janata, A.; Joosten, R.; Jouravlev, N.I.; Kabuss, E.; Kalinnikov, V.; Kang, D.; Karstens, F.; Kastaun, W.; Ketzer, B.; Khaustov, G.V.; Khokhlov, Yu.A.; Khomutov, N.V.; Kisselev, Yu.; Klein, F.; Koblitz, S.; Koivuniemi, J.H.; Kolosov, V.N.; Komissarov, E.V.; Kondo, K.; Konigsmann, Kay; Konoplyannikov, A.K.; Konorov, I.; Konstantinov, V.F.; Korentchenko, A.S.; Korzenev, A.; Kotzinian, A.M.; Koutchinski, N.A.; Kowalik, K.; Kravchuk, N.P.; Krivokhizhin, G.V.; Kroumchtein, Z.V.; Kuhn, R.; Kunne, F.; Kurek, K.; Ladygin, M.E.; Lamanna, M.; Le Goff, J.M.; Leberig, M.; Lichtenstadt, J.; Liska, T.; Ludwig, I.; Maggiora, A.; Maggiora, M.; Magnon, A.; Mallot, G.K.; Manuilov, I.V.; Marchand, C.; Marroncle, J.; Martin, A.; Marzec, J.; Matsuda, T.; Maximov, A.N.; Medved, K.S.; Meyer, W.; Mielech, A.; Mikhailov, Yu.V.; Moinester, M.A.; Nahle, O.; Nassalski, J.; Neliba, S.; Neyret, D.P.; Nikolaenko, V.I.; Nozdrin, A.A.; Obraztsov, V.F.; Olshevsky, A.G.; Ostrick, M.; Padee, A.; Pagano, P.; Panebianco, S.; Panzieri, D.; Paul, S.; Pereira, H.D.; Peshekhonov, D.V.; Peshekhonov, V.D.; Piragino, G.; Platchkov, S.; Platzer, K.; Pochodzalla, J.; Polyakov, V.A.; Popov, A.A.; Pretz, J.; Quintans, C.; Ramos, S.; Rebourgeard, P.C.; Reicherz, G.; Reymann, J.; Rith, K.; Rozhdestvensky, A.M.; Rondio, E.; Sadovski, A.B.; Saller, E.; Samoylenko, V.D.; Sandacz, A.; Sans, M.; Sapozhnikov, M.G.; Savin, Igor A.; Schiavon, P.; Schill, C.; Schmidt, T.; Schmitt, H.; Schmitt, L.; Shevchenko, O.Yu.; Shishkin, A.A.; Siebert, H.-W.; Sinha, L.; Sissakian, A.N.; Skachkova, A.; Slunecka, M.; Smirnov, G.I.; Sozzi, F.; Sugonyaev, V.P.; Srnka, A.; Stinzing, F.; Stolarski, M.; Sulc, M.; Sulej, R.; Takabayashi, N.; Tchalishev, V.V.; Tessarotto, F.; Teufel, A.; Thers, D.; Tkatchev, L.G.; Toeda, T.; Tretyak, V.I.; Trusov, Sergey V.; Varanda, M.; Virius, M.; Vlassov, N.V.; Wagner, M.; Webb, R.; Weise, E.; Weitzel, Q.; Wiedner, U.; Wiesmann, M.; Windmolders, R.; Wirth, S.; Wislicki, W.; Zanetti, A.M.; Zaremba, K.; Zhao, J.; Ziegler, R.; Zvyagin, A.
2007-01-01
We present a precise measurement of the deuteron longitudinal spin asymmetry $A_1^d$ and of the deuteron spin-dependent structure function $g_1^d$ at $Q^2 < $ 1~(GeV/$c$)$^2$ and $4\\cdot$10$^{-5} < x < $~2.5$\\cdot$10$^{-2}$ based on the data collected by the COMPASS experiment at CERN during the years 2002 and 2003. The statistical precision is tenfold better than that of the previous measurement in this region. The measured $A_1^d$ and $g_1^d$ are found to be consistent with zero in the whole range of $x$.
Sharov, V. I.; Anischenko, N. G.; Antonenko, V. G.; Averichev, S. A.; Azhgirey, L. S.; Bartenev, V. D.; Bazhanov, N. A.; Belyaev, A. A.; Blinov, N. A.; Borisov, N. S.; Borzakov, S. B.; Borzunov, Yu. T.; Bushuev, Yu. P.; Chernenko, L. P.; Chernykh, E. V.; Chumakov, V. F.; Dolgh, S. A.; Fedorov, A. N.; Fimushkin, V. V.; Finger, M.; Finger, M.; Golovanov, L. B.; Gurevich, G. M.; Guriev, D. K.; Janata, A.; Kirillov, A. D.; Kolomiets, V. G.; Komogorov, E. V.; Kovalenko, A. D.; Kovalev, A. I.; Krasnov, V. A.; Krstonoshich, P.; Kuzmin, E. S.; Kuzmin, N. A.; Ladygin, V. P.; Lazarev, A. B.; Lehar, F.; de Lesquen, A.; Liburg, M. Yu.; Livanov, A. N.; Lukhanin, A. A.; Maniakov, P. K.; Matafonov, V. N.; Matyushevsky, E. A.; Moroz, V. D.; Morozov, A. A.; Neganov, A. B.; Nikolaevsky, G. P.; Nomofilov, A. A.; Panteleev, Tz.; Pillpenko, Yu. K.; Pisarev, I. L.; Plis, Yu. A.; Polunin, Yu. P.; Prokofiev, A. N.; Prytkov, V. Yu.; Rukoyatkin, P. A.; Schedrov, V. A.; Schevelev, O. N.; Shilov, S. N.; Shindin, R. A.; Slunecka, M.; Slunečková, V.; Starikov, A. Yu.; Stoletov, G. D.; Strunov, L. N.; Svetov, A. L.; Usov, Yu. A.; Vasiliev, T.; Volkov, V. I.; Vorobiev, E. I.; Yudin, I. P.; Zaitsev, I. V.; Zhdanov, A. A.; Zhmyrov, V. N.
2005-01-01
New accurate data on the neutron-proton spin-dependent total cross section difference Δ σ L( np) at the neutron beam kinetic energies 1.4, 1.7, 1.9 and 2.0 GeV are presented. A number of physical and methodical results on investigation of an elastic np→pn charge exchange process over a few GeV region are also presented. Measurements were carried out at the Synchrophasotron and Nuclotron of the Veksler and Baldin Laboratory of High Energies of the Joint Institute for Nuclear Research.
International Nuclear Information System (INIS)
Chang, S.; Coriano, C.; Elwood, J.K.
1997-01-01
The authors investigate the role of the transverse spin dependence in Drell Yan lepton pair production to NLO in QCD at parton level. In the analysis the authors deal with the large p Τ distributions. They give very compact expressions for the virtual O(α s 2 ) corrections to the cross section and show that the singularities factorize. The study is performed in the MS scheme in Dimensional Regularization, and with the t'Hooft-Veltman prescription for γ 5 . A discussion of the structure of the real emissions is included, and detailed methods for the study of these contributions are formulated
Effect of Orbital Hybridization on Spin-Polarized Tunneling across Co/C60 Interfaces.
Wang, Kai; Strambini, Elia; Sanderink, Johnny G M; Bolhuis, Thijs; van der Wiel, Wilfred G; de Jong, Michel P
2016-10-26
The interaction between ferromagnetic surfaces and organic semiconductors leads to the formation of hybrid interfacial states. As a consequence, the local magnetic moment is altered, a hybrid interfacial density of states (DOS) is formed, and spin-dependent shifts of energy levels occur. Here, we show that this hybridization affects spin transport across the interface significantly. We report spin-dependent electronic transport measurements for tunnel junctions comprising C 60 molecular thin films grown on top of face-centered-cubic (fcc) epitaxial Co electrodes, an AlO x tunnel barrier, and an Al counter electrode. Since only one ferromagnetic electrode (Co) is present, spin-polarized transport is due to tunneling anisotropic magnetoresistance (TAMR). An in-plane TAMR ratio of approximately 0.7% has been measured at 5 K under application of a magnetic field of 800 mT. The magnetic switching behavior shows some remarkable features, which are attributed to the rotation of interfacial magnetic moments. This behavior can be ascribed to the magnetic coupling between the Co thin films and the newly formed Co/C 60 hybridized interfacial states. Using the Tedrow-Meservey technique, the tunnel spin polarization of the Co/C 60 interface was found to be 43%.
Electric dipole spin resonance in a quantum spin dimer system driven by magnetoelectric coupling
Kimura, Shojiro; Matsumoto, Masashige; Akaki, Mitsuru; Hagiwara, Masayuki; Kindo, Koichi; Tanaka, Hidekazu
2018-04-01
In this Rapid Communication, we propose a mechanism for electric dipole active spin resonance caused by spin-dependent electric polarization in a quantum spin gapped system. This proposal was successfully confirmed by high-frequency electron spin resonance (ESR) measurements of the quantum spin dimer system KCuCl3. ESR measurements by an illuminating linearly polarized electromagnetic wave reveal that the optical transition between the singlet and triplet states in KCuCl3 is driven by an ac electric field. The selection rule of the observed transition agrees with the calculation by taking into account spin-dependent electric polarization. We suggest that spin-dependent electric polarization is effective in achieving fast control of quantum spins by an ac electric field.
Energy Technology Data Exchange (ETDEWEB)
Cavalcanti Malta, Pedro
2017-06-27
It is well known that the Standard Model is not complete and many of the theories that seek to extend it predict new phenomena that may be accessible in low-energy settings. This thesis deals with some of these, namely, novel spin-dependent interparticle potentials, axion-like particles and Lorentz-symmetry violation. In Part I we discuss the spin-dependent potentials that arise due to the exchange of a topologically massive mediator, and also pursue a comparative study between spin-1/2 and spin-1 sources. In Part II we treat massive axion-like particles that may be copiously produced in core-collapse supernovae, thus leading to a non-standard flux of gamma rays. Using SN 1987A and the fact that after its observation no extra gamma-ray signal was detected, we are able to set robust limits on the parameter space of axion-like particles with masses in the 10 keV - 100 MeV range. Finally, in Part III we investigate the effects of Lorentz-breaking backgrounds in QED. We discuss two scenarios: a modification in the Maxwell sector via the Carroll-Field-Jackiw term and a new non-minimal coupling between electrons and photons. We are able to set upper limits on the coefficients of the backgrounds by using laboratory-based measurements.
International Nuclear Information System (INIS)
Lebedenko, V. N.; Bewick, A.; Currie, A.; Davidge, D.; Dawson, J.; Horn, M.; Howard, A. S.; Jones, W. G.; Joshi, M.; Liubarsky, I.; Lyons, K.; Quenby, J. J.; Sumner, T. J.; Thorne, C.; Walker, R. J.; Araujo, H. M.; Edwards, B.; Barnes, E. J.; Ghag, C.; Murphy, A. StJ.
2009-01-01
We present new experimental constraints on the WIMP-nucleon spin-dependent elastic cross sections using data from the first science run of ZEPLIN-III, a two-phase xenon experiment searching for galactic dark matter weakly interacting massive particles based at the Boulby mine. Analysis of ∼450 kg·days fiducial exposure allow us to place a 90%-confidence upper limit on the pure WIMP-neutron cross section of σ n =1.9x10 -2 pb at 55 GeV/c 2 WIMP mass. Recent calculations of the nuclear spin structure based on the Bonn charge-dependent nucleon-nucleon potential were used for the odd-neutron isotopes 129 Xe and 131 Xe. These indicate that the sensitivity of xenon targets to the spin-dependent WIMP-proton interaction could be much lower than implied by previous calculations, whereas the WIMP-neutron sensitivity is impaired only by a factor of ∼2.
International Nuclear Information System (INIS)
Eslami, Leila; Esmaeilzadeh, Mahdi
2014-01-01
Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from −1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted
International Nuclear Information System (INIS)
Li, Xin-Mei; Long, Meng-Qiu; Cui, Li-Ling; Xiao, Jin; Zhang, Xiao-Jiao; Zhang, Dan; Xu, Hui
2014-01-01
Based on nonequilibrium Green's function in combination with density functional theory calculations, the spin-dependent electronic transport properties of one-dimensional zigzag molybdenum disulfide (MoS 2 ) nanoribbons with V-shaped defect and H-saturation on the edges have been studied. Our results show that the spin-polarized transport properties can be found in all the considered zigzag MoS 2 nanoribbons systems. The edge defects, especially the V-shaped defect on the Mo edge, and H-saturation on the edges can suppress the electronic transport of the systems. Also, the spin-filtering and negative differential resistance behaviors can be observed obviously. The mechanisms are proposed for these phenomena. - Highlights: • The spin-dependent electronic transport of zigzag MoS 2 nanoribbons. • The effects of V-shaped edge defect and H-saturation. • The effects of spin-filter and negative differential resistance can be observed
Hoi, Bui Dinh; Yarmohammadi, Mohsen
2018-04-01
The spin-dependent electrical conductivity of counterparts of graphene, transition-metal dichalcogenides (TMDs) and group-IV nanosheets, have investigated by a magnetic exchange field (MEF)-induction to gain the electronic transport properties of charge carriers. We have implemented a k.p Hamiltonian model through the Kubo-Greenwood formalism in order to address the dynamical behavior of correlated Dirac fermions. Tuning the MEF enables one to control the effective mass of carriers in group-IV and TMDs, differently. We have found the Dirac-like points in a new quantum anomalous Hall (QAH) state at strong MEFs for both structures. For both cases, a broad peak in electrical conductivity originated from the scattering rate and entropy is observed. Spin degeneracy at some critical MEFs is another remarkable point. We have found that in the limit of zero or uniform MEFs with respect to the spin-orbit interaction, the large resulting electrical conductivity depends on the spin sub-bands in group-IV and MLDs. Featuring spin-dependent electronic transport properties, one can provide a new scenario for future possible applications.
Haddock, C.; Crawford, B.; Fox, W.; Francis, I.; Holley, A.; Magers, S.; Sarsour, M.; Snow, W. M.; Vanderwerp, J.
2018-03-01
We discuss the design and construction of a novel target array of nonmagnetic test masses used in a neutron polarimetry measurement made in search for new possible exotic spin dependent neutron-atominteractions of Nature at sub-mm length scales. This target was designed to accept and efficiently transmit a transversely polarized slow neutron beam through a series of long open parallel slots bounded by flat rectangular plates. These openings possessed equal atom density gradients normal to the slots from the flat test masses with dimensions optimized to achieve maximum sensitivity to an exotic spin-dependent interaction from vector boson exchanges with ranges in the mm - μm regime. The parallel slots were oriented differently in four quadrants that can be rotated about the neutron beam axis in discrete 90°increments using a Geneva drive. The spin rotation signals from the 4 quadrants were measured using a segmented neutron ion chamber to suppress possible systematic errors from stray magnetic fields in the target region. We discuss the per-neutron sensitivity of the target to the exotic interaction, the design constraints, the potential sources of systematic errors which could be present in this design, and our estimate of the achievable sensitivity using this method.
... a passing cramp? It could be carpal tunnel syndrome. The carpal tunnel is a narrow passageway of ... three times more likely to have carpal tunnel syndrome than men. Early diagnosis and treatment are important ...
Current noise in tunnel junctions
Energy Technology Data Exchange (ETDEWEB)
Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)
2017-06-15
We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Single-magnon tunneling through a ferromagnetic nanochain
International Nuclear Information System (INIS)
Petrov, E.G.; Ostrovsky, V.
2010-01-01
Magnon transmission between ferromagnetic contacts coupled by a linear ferromagnetic chain is studied at the condition when the chain exhibits itself as a tunnel magnon transmitter. It is shown that dependently on magnon energy at the chain, a distant intercontact magnon transmission occurs either in resonant or off-resonant tunneling regime. In the first case, a transmission function depends weakly on the number of chain sites whereas at off-resonant regime the same function manifests an exponential drop with the chain length. Change of direction of external magnetic field in one of ferromagnetic contacts blocks a tunnel transmission of magnon.
Paredes-Gutiérrez, H.; Pérez-Merchancano, S. T.; Beltran-Rios, C. L.
2017-12-01
In this work, we study the quantum electron transport through a Quantum Dots Structure (QDs), with different geometries, embedded in a Quantum Well (QW). The behaviour of the current through the nanostructure (dot and well) is studied considering the orbital spin coupling of the electrons and the Rashba effect, by means of the second quantization theory and the standard model of Green’s functions. Our results show the behaviour of the current in the quantum system as a function of the electric field, presenting resonant states for specific values of both the external field and the spin polarization. Similarly, the behaviour of the current on the nanostructure changes when the geometry of the QD and the size of the same are modified as a function of the polarization of the electron spin and the potential of quantum confinement.
Tunneling technologies for the collider ring tunnels
International Nuclear Information System (INIS)
Frobenius, P.
1989-01-01
The Texas site chosen for the Superconducting Super Collider has been studied, and it has been determined that proven, conventional technology and accepted engineering practice are suitable for constructing the collider tunnels. The Texas National Research Laboratory Commission report recommended that two types of tunneling machines be used for construction of the tunnels: a conventional hard rock tunnel boring machine (TBM) for the Austin chalk and a double shielded, rotary TBM for the Taylor marl. Since the tunneling machines usually set the pace for the project, efficient planning, operation, and coordination of the tunneling system components will be critical to the schedule and cost of the project. During design, tunneling rate prediction should be refined by focusing on the development of an effective tunneling system and evaluating its capacity to meet or exceed the required schedules. 8 refs., 13 figs
Unidirectional magnetoelectric-field multiresonant tunneling
International Nuclear Information System (INIS)
Kamenetskii, E O; Hollander, E; Joffe, R; Shavit, R
2015-01-01
Unidirectional multi-resonant tunneling of the magnetoelectric (ME) field excitations through a subwavelength (regarding the scales of regular electromagnetic radiation) vacuum or isotropic-dielectric regions has been observed in two-port microwave structures having a quasi-2D ferrite disk with magnetic dipolar mode (MDM) oscillations. The excitations manifest themselves as Fano-resonance peaks in the scattering-matrix parameters at the stationary states of the MDM spectrum. The ME near-field excitations are quasimagnetostatic fields ∇-vector × H-vector =0 with non-zero helicity parameter: F=(1/(16π))Im{ E-vector ⋅( ∇-vector × E-vector ) ∗ }. Topological phase properties of ME fields are determined by edge chiral currents of MDM oscillations. We show that while for a given direction of a bias magnetic field (in other words, for a given direction of time), the ME field excitations are considered as ‘forward’ tunneling processes, in the opposite direction of a bias magnetic field (the opposite direction of time), there are ‘backward’ tunneling processes. Unidirectional ME field resonant tunneling is observed due to the distinguishable topology of the ‘forward’ and ‘backward’ ME field excitations. We establish a close connection between the Fano-resonance unidirectional tunneling and the topology of the ME fields in different microwave structures. (paper)
Spin-transfer torque in spin filter tunnel junctions
Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek
2014-01-01
Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.
Spin-transfer torque in spin filter tunnel junctions
Ortiz Pauyac, Christian
2014-12-08
Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.
Energy Technology Data Exchange (ETDEWEB)
Kanaki, Toshiki, E-mail: kanaki@cryst.t.u-tokyo.ac.jp; Asahara, Hirokatsu; Ohya, Shinobu, E-mail: ohya@cryst.t.u-tokyo.ac.jp; Tanaka, Masaaki, E-mail: masaaki@ee.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
2015-12-14
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.
International Nuclear Information System (INIS)
Kanaki, Toshiki; Asahara, Hirokatsu; Ohya, Shinobu; Tanaka, Masaaki
2015-01-01
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I DS by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I DS by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale
Scanning tunneling microscopy of hexagonal BN grown on graphite
International Nuclear Information System (INIS)
Fukumoto, H.; Hamada, T.; Endo, T.; Osaka, Y.
1991-01-01
The microscopic surface topography of thin BN x films grown on graphite by electron cyclotron resonance plasma chemical vapor deposition have been imaged with scanning tunneling microscopy in air. The scanning tunneling microscope has generated images of hexagonal BN with atomic resolution
Single-atom contacts with a scanning tunnelling microscope
International Nuclear Information System (INIS)
Kroeger, J; Neel, N; Sperl, A; Wang, Y F; Berndt, R
2009-01-01
The tip of a cryogenic scanning tunnelling microscope is used to controllably contact single atoms adsorbed on metal surfaces. The transition between tunnelling and contact is gradual for silver, while contact to adsorbed gold atoms is abrupt. The single-atom junctions are stable and enable spectroscopic measurements of, e.g., the Abrikosov-Suhl resonance of single Kondo impurities.
Transport properties of magnetic atom bridges controlled by a scanning tunneling microscope
International Nuclear Information System (INIS)
Nakanishi, H.; Kishi, T.; Kasai, H.; Komori, F.; Okiji, A.
2003-01-01
We have investigated the transport and magnetic properties of the atom bridge made from magnetic materials, which is the atom-scale wire constructed between a scanning tunneling microscope (STM) tip and a solid surface, by the use of ab initio calculations. In the case of the twisted ladder structure atom bridge made of Fe, we have found that the magnetic state of the bridge changes from ferromagnetic to paramagnetic, as we compress the bridge in length. We report the spin dependent quantized conductance of the bridge. And we discuss the origin of a change in transport properties as we compress the bridge in length
Electron-tunneling observation of localized excited states in superconducting manganese-doped lead
International Nuclear Information System (INIS)
Tsang, J.; Ginsberg, D.M.
1980-01-01
We have made electron-tunneling measurements on a dilute, superconducting lead-manganese alloy. A well-defined structure was observed in the ac-conductance--voltage curves, indicating excited states within the BCS energy gap. These states were partially accounted for by Shiba theory when spin-dependent s-, p-, and d-wave scattering were included. The phase shifts used in doing that were the results of band calculations. The experimental data also show the existence of a broad background density of states in the energy gap, which cannot be accounted for by the theory
International Nuclear Information System (INIS)
Cleland, A.N.
1991-04-01
Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement
International Nuclear Information System (INIS)
Mitsuoka, Shigenori; Tamura, Akira
2011-01-01
Assuming that an electron confined by double δ-function barriers lies in a quasi-stationary state, we derived eigenstates and eigenenergies of the electron. Such an electron has a complex eigenenergy, and the imaginary part naturally leads to the lifetime of the electron associated with tunneling through barriers. We applied this point of view to the electron confined in a rectangular quantum corral (QC) on a noble metal surface, and obtained scanning tunneling microscopic images and a scanning tunneling spectrum consistent with experimental ones. We investigated the electron states confined in coupled QCs and obtained the coupled states constructed with bonding and anti-bonding states. Using those energy levels and wavefunctions we specified scanning tunneling microscope (STM) images and scanning tunneling spectra (STS) for the doubly and triply coupled QCs. In addition we pointed out the feature of resonant electron states associated with the same QCs at both ends of the triply coupled QCs.
Quasi-bound states, resonance tunnelling, and tunnelling times ...
Indian Academy of Sciences (India)
analysis of bound states below the threshold energy E = 0 and continuum above the threshold .... p are time reversal states of each other. Similarly, the ... are occurring at above-barrier energies and we do not treat them as QB states. They can ...
Directory of Open Access Journals (Sweden)
Suomalainen P
2014-08-01
Full Text Available Piia Suomalainen,1 Tommi Kiekara,2 Anna-Stina Moisala,1 Antti Paakkala,2 Pekka Kannus,3 Timo Järvelä4 1Division of Orthopaedics and Traumatology, Department of Trauma, Musculoskeletal Surgery and Rehabilitation, Tampere University Hospital, Tampere, 2Medical Imaging Centre, Tampere University Hospital, Tampere, 3Injury and Osteoporosis Research Center, UKK Institute, Tampere, 4Arthroscopic and Sports Medicine Center Omasairaala, Helsinki, Finland Purpose: The purpose of the study reported here was to find out if the clinical and magnetic resonance imaging (MRI findings of a reconstructed anterior cruciate ligament (ACL have an association. Our hypothesis, which was based on the different functions of the ACL bundles, was that the visibility of the anteromedial graft would have an impact on anteroposterior stability, and the visibility of the posterolateral graft on rotational stability of the knee. Methods: This study is a level II, prospective clinical and MRI study (NCT02000258. The study involved 75 patients. One experienced orthopedic surgeon performed all double-bundle ACL reconstructions. Two independent examiners made the clinical examinations at 2-year follow-up: clinical examination of the knee; KT-1000, International Knee Documentation Committee and Lysholm knee evaluation scores; and International Knee Documentation Committee functional score. The MRI evaluations were made by two musculoskeletal radiologists separately, and the means of these measurements were used. Results: We found that the location of the graft in the tibia had an impact on the MRI visibility of the graft at 2-year follow-up. There were significantly more partially or totally invisible grafts if the insertion of the graft was more anterior in the tibia. No association was found between the clinical results and the graft locations. Conclusion: Anterior graft location in the tibia can cause graft invisibility in the MRI 2 years after ACL reconstruction, but this
International Nuclear Information System (INIS)
Cleland, A.N.
1991-01-01
Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias
Phonon tunneling through a double barrier system
International Nuclear Information System (INIS)
Villegas, Diosdado; León-Pérez, Fernando de; Pérez-Álvarez, R.; Arriaga, J.
2015-01-01
The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices
Phonon tunneling through a double barrier system
Energy Technology Data Exchange (ETDEWEB)
Villegas, Diosdado [Departamento de Física, Universidad Central “Marta Abreu” de Las Villas, CP 54830, Santa Clara, Villa Clara (Cuba); Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico); León-Pérez, Fernando de [Centro Universitario de la Defensa de Zaragoza, Ctra. de Huesca s/n, E-50090 Zaragoza (Spain); Pérez-Álvarez, R. [Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, CP 62209 Cuernavaca (Mexico); Arriaga, J., E-mail: arriaga@ifuap.buap.mx [Instituto de Física, Universidad Autónoma de Puebla, 18 Sur y San Claudio, Edif. 110A, Ciudad Universitaria, 72570 Puebla (Mexico)
2015-04-15
The tunneling of optical and acoustic phonons at normal incidence on a double-barrier is studied in this paper. Transmission coefficients and resonance conditions are derived theoretically under the assumption that the long-wavelength approximation is valid. It is shown that the behavior of the transmission coefficients for the symmetric double barrier has a Lorentzian form close to resonant frequencies and that Breit–Wigner's formula have a general validity in one-dimensional phonon tunneling. Authors also study the so-called generalized Hartman effect in the tunneling of long-wavelength phonons and show that this effect is a numerical artifact resulting from taking the opaque limit before exploring the variation with a finite barrier width. This study could be useful for the design of acoustic devices.
International Nuclear Information System (INIS)
Dempsey, K.J.; Arena, D.; Hindmarch, A.T.; Wei, H.X.; Qin, Q.H.; Wen, Z.C.; Wang, W.X.; Vallejo-Fernandez, G.; Han, X.F.; Marrows, C.H.
2010-01-01
Temperature and bias voltage-dependent transport characteristics are presented for double magnetic tunnel junctions (DMTJs) with self-assembled NiFe nanoparticles embedded between insulating alumina barriers. The junctions with embedded nanoparticles are compared to junctions with a single barrier of comparable size and growth conditions. The embedded particles are characterized using x-ray absorption spectroscopy, transmission electron microscopy, and magnetometry techniques, showing that they are unoxidized and remain superparamagnetic to liquid helium temperatures. The tunneling magnetoresistance (TMR) for the DMTJs is lower than the control samples, however, for the DMTJs an enhancement in TMR is seen in the Coulomb blockade region. Fitting the transport data in this region supports the theory that cotunneling is the dominant electron transport process within the Coulomb blockade region, sequential tunneling being suppressed. We therefore see an enhanced TMR attributed to the change in the tunneling process due to the interplay of the Coulomb blockade and spin-dependent tunneling through superparamagnetic nanoparticles, and develop a simple model to quantify the effect, based on the fact that our nanoparticles will appear blocked when measured on femtosecond tunneling time scales.
Energy Technology Data Exchange (ETDEWEB)
Hassel, Christoph
2009-08-11
In the present thesis, the spin dependent transport in epitaxial Fe wires as well as in perpendicularly magnetized multilayer wires is investigated. The main focus is on the investigation of quantum transport phenomena, the domain wall resistance as well as the current induced domain wall motion. Epitaxial Fe wires are prepared from epitaxial Fe films by means of electron beam lithography. Because of the intrinsic magnetic anisotropy, it is possible to prepare wires with a remanent transversal magnetization. Magnetic force microscopy is used to image the magnetic state of single wires. The magnetization reversal behaviour of these wires is investigated in detail using magnetoresistance measurements. These measurements are dominated by effects of the anisotropic magnetoresistance and can be explained by micromagnetic calculations. For the first time, quantum transport phenomena in epitaxial Fe wires are studied by magnetoresistance measurements for temperatures down to 20 mK. These measurements clearly indicate that, independent of the wire width and orientation, no contribution due to weak electron localization can be observed. The results are quantitatively explained within the framework of enhanced electron-electron interactions. Furthermore, by reducing the wire width the onset of the transition from two-dimensional to one-dimensional behaviour is found. To determine the domain wall resistance, a different number of domain walls is created in various structures, whereby the epitaxial samples allow to investigate different domain wall structures. First, a technique based on the stray field of a magnetic force microscope tip is presented. Furthermore, the influence of the shape anisotropy on the coercive field of single wires is used. Contributions to the observed resistance change due to the anisotropic magnetoresistance are calculated using micromagnetic simulations. A positive intrinsic relative resistance increase of 0.2% within the domain wall is found at
Franck-Condon fingerprinting of vibration-tunneling spectra.
Berrios, Eduardo; Sundaradevan, Praveen; Gruebele, Martin
2013-08-15
We introduce Franck-Condon fingerprinting as a method for assigning complex vibration-tunneling spectra. The B̃ state of thiophosgene (SCCl2) serves as our prototype. Despite several attempts, assignment of its excitation spectrum has proved difficult because of near-degenerate vibrational frequencies, Fermi resonance between the C-Cl stretching mode and the Cl-C-Cl bending mode, and large tunneling splittings due to the out-of-plane umbrella mode. Hence, the spectrum has never been fitted to an effective Hamiltonian. Our assignment approach replaces precise frequency information with intensity information, eliminating the need for double resonance spectroscopy or combination differences, neither of which have yielded a full assignment thus far. The dispersed fluorescence spectrum of each unknown vibration-tunneling state images its character onto known vibrational progressions in the ground state. By using this Franck-Condon fingerprint, we were able to determine the predominant character of several vibration-tunneling states and assign them; in other cases, the fingerprinting revealed that the states are strongly mixed and cannot be characterized with a simple normal mode assignment. The assigned transitions from vibration-tunneling wave functions that were not too strongly mixed could be fitted within measurement uncertainty by an effective vibration-tunneling Hamiltonian. A fit of all observed vibration-tunneling states will require a full resonance-tunneling Hamiltonian.
Henderson, J. J.; Koo, C.; Feng, P. L.; del Barco, E.; Hill, S.; Tupitsyn, I. S.; Stamp, P. C. E.; Hendrickson, D. N.
2009-01-01
We present low temperature magnetometry measurements on a new Mn3 single-molecule magnet (SMM) in which the quantum tunneling of magnetization (QTM) displays clear evidence for quantum mechanical selection rules. A QTM resonance appearing only at elevated temperatures demonstrates tunneling between excited states with spin projections differing by a multiple of three: this is dictated by the C3 symmetry of the molecule, which forbids pure tunneling from the lowest metastable state. Resonances...
2002-01-01
The aim of the experiment is to measure @*N spin obssservables using a frozen spin target and a high resolution spectrometer (SPES II). The &bar.NN scattering is usually described with NN potentials transformed by G-parity, where the large annihilation cross section (@s^a^n/@s^e^l$>$2) is taken into account. The different theoretical approaches fit reasonably well the existing data on spin integrated cross sections. For the spin dependent observables, the predictions depend consistently on the theoretical inputs.\\\\ \\\\ A strong energy dependence of the @*p polarization Ay(@q) is predicted. We plan to check it measuring the angular distribution of Ay(@q) for @* momenta between 300 and 700 MV/c. Using a deuterium target, measurements of Ay(@q) for @*d in the same energy range will provide information on @*n scattering.\\\\ \\\\ The @* beam hits a 5 mm thick frozen spin target which has a large opening aperture. We expect a polarization of @=~80\\% with a low holding field of (.35Tm). The incident trajectory is de...
Badelek, Barbara
2018-01-01
This paper summarizes the COMPASS Collaboration legacy on measurements of the proton and deuteron spin-dependent structure functions, $g_1^p$ and $g_1^d$ at $Q^2 1$ (GeV/c)$^2$. In both regions and at the lowest measured $x, g^d_1 (x)$ is consistent with zero while $g^p_1 (x)$ is positive. This is the first time that the spin effects are observed at such low values of $x$. The NLO QCD fit of $g_1$ world data gives well constrained quark helicity distributions; gluons are poorly determined. Quark helicity contribution to nucleon spin is $0.26 < \\Delta \\Sigma < 0.36$. From the COMPASS data alone the Bjorken sum rule is verified to $9\\%$ accuracy and the extracted flavour-singlet axial charge is $a_0 (Q^2 = 3 (\\text{GeV/}c)^2) = 0.32 \\pm 0.02_{stat.} \\pm 0.04_{syst.} \\pm 0.05_{evol.}$.
Directory of Open Access Journals (Sweden)
S. Mohammad Moosavi Nejad
2017-08-01
Full Text Available In recent years, searches for the light and heavy charged Higgs bosons have been done by the ATLAS and the CMS collaborations at the Large Hadron Collider (LHC in proton–proton collision. Nevertheless, a definitive search is a program that still has to be carried out at the LHC. The experimental observation of charged Higgs bosons would indicate physics beyond the Standard Model. In the present work, we study the scaled-energy distribution of bottom-flavored mesons (B inclusively produced in polarized top quark decays into a light charged Higgs boson and a massless bottom quark at next-to-leading order in the two-Higgs-doublet model; t(↑→bH+→BH++X. This spin-dependent energy distribution is studied in a specific helicity coordinate system where the polarization vector of the top quark is measured with respect to the direction of the Higgs momentum. The study of these energy distributions could be considered as a new channel to search for the charged Higgs bosons at the LHC. For our numerical analysis and phenomenological predictions, we restrict ourselves to the unexcluded regions of the MSSM mH+−tanβ parameter space determined by the recent results of the CMS [13] and ATLAS [14] collaborations.
Adamczyk, L.; Adams, J. R.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Ajitanand, N. N.; Alekseev, I.; Anderson, D. M.; Aoyama, R.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Ashraf, M. U.; Attri, A.; Averichev, G. S.; Bairathi, V.; Barish, K.; Behera, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, J. D.; Brandin, A. V.; Brown, D.; Bryslawskyj, J.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chankova-Bunzarova, N.; Chatterjee, A.; Chattopadhyay, S.; Chen, J. H.; Chen, X.; Chen, X.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Dedovich, T. G.; Deng, J.; Deppner, I. M.; Derevschikov, A. A.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Efimov, L. G.; Elsey, N.; Engelage, J.; Eppley, G.; Esha, R.; Esumi, S.; Evdokimov, O.; Ewigleben, J.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Federicova, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Fujita, J.; Fulek, L.; Gagliardi, C. A.; Geurts, F.; Gibson, A.; Girard, M.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, A.; Guryn, W.; Hamad, A. I.; Hamed, A.; Harlenderova, A.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Herrmann, N.; Hirsch, A.; Horvat, S.; Huang, X.; Huang, H. Z.; Huang, T.; Huang, B.; Humanic, T. J.; Huo, P.; Igo, G.; Jacobs, W. W.; Jentsch, A.; Jia, J.; Jiang, K.; Jowzaee, S.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kapukchyan, D.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z.; Kikoła, D. P.; Kim, C.; Kisel, I.; Kisiel, A.; Kochenda, L.; Kocmanek, M.; Kollegger, T.; Kosarzewski, L. K.; Kraishan, A. F.; Krauth, L.; Kravtsov, P.; Krueger, K.; Kulathunga, N.; Kumar, L.; Kvapil, J.; Kwasizur, J. H.; Lacey, R.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, W.; Li, C.; Li, X.; Li, Y.; Lidrych, J.; Lin, T.; Lisa, M. A.; Liu, Y.; Liu, H.; Liu, F.; Liu, P.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Luo, S.; Ma, L.; Ma, Y. G.; Ma, G. L.; Ma, R.; Magdy, N.; Majka, R.; Mallick, D.; Margetis, S.; Markert, C.; Matis, H. S.; Mayes, D.; Meehan, K.; Mei, J. C.; Miller, Z. W.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mizuno, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nemes, D. B.; Nie, M.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Nonaka, T.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V. A.; Olvitt, D.; Page, B. S.; Pak, R.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Pruthi, N. K.; Przybycien, M.; Putschke, J.; Quintero, A.; Ramachandran, S.; Ray, R. L.; Reed, R.; Rehbein, M. J.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roth, J. D.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Salur, S.; Sandweiss, J.; Saur, M.; Schambach, J.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Schweid, B. R.; Seger, J.; Sergeeva, M.; Seto, R.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Shen, W. Q.; Shi, S. S.; Shi, Z.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solyst, W.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stewart, D. J.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Sugiura, T.; Sumbera, M.; Summa, B.; Sun, X.; Sun, X. M.; Sun, Y.; Surrow, B.; Svirida, D. N.; Tang, Z.; Tang, A. H.; Taranenko, A.; Tarnowsky, T.; Tawfik, A.; Thäder, J.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Tu, B.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vasiliev, A. N.; Videbæk, F.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, G.; Wang, Y.; Wang, Y.; Wang, F.; Webb, G.; Webb, J. C.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y.; Xiao, Z. G.; Xie, G.; Xie, W.; Xu, N.; Xu, Y. F.; Xu, Q. H.; Xu, Z.; Yang, Y.; Yang, C.; Yang, S.; Yang, Q.; Ye, Z.; Ye, Z.; Yi, L.; Yip, K.; Yoo, I.-K.; Zbroszczyk, H.; Zha, W.; Zhang, J. B.; Zhang, J.; Zhang, S.; Zhang, J.; Zhang, S.; Zhang, Z.; Zhang, Y.; Zhang, L.; Zhang, X. P.; Zhao, J.; Zhong, C.; Zhou, C.; Zhou, L.; Zhu, X.; Zhu, Z.; Zyzak, M.
2018-05-01
The transversity distribution, which describes transversely polarized quarks in transversely polarized nucleons, is a fundamental component of the spin structure of the nucleon, and is only loosely constrained by global fits to existing semi-inclusive deep inelastic scattering (SIDIS) data. In transversely polarized p↑ + p collisions it can be accessed using transverse polarization dependent fragmentation functions which give rise to azimuthal correlations between the polarization of the struck parton and the final state scalar mesons. This letter reports on spin dependent di-hadron correlations measured by the STAR experiment. The new dataset corresponds to 25 pb-1 integrated luminosity of p↑ + p collisions at √{ s } = 500 GeV, an increase of more than a factor of ten compared to our previous measurement at √{ s } = 200 GeV. Non-zero asymmetries sensitive to transversity are observed at a Q2 of several hundred GeV and are found to be consistent with the former measurement and a model calculation. We expect that these data will enable an extraction of transversity with comparable precision to current SIDIS datasets but at much higher momentum transfers where subleading effects are suppressed.
Badelek, Barbara
2017-01-01
This paper summarizes the COMPASS Collaboration legacy on measurements of the proton and deuteron spin-dependent structure functions, $g_1^p$ and $g_1^d$ at $Q^2 1$ (GeV/c)$^2$. In both regions and at the lowest measured $x, g^d_1 (x)$ is consistent with zero while $g^p_1 (x)$ is positive. This is the first time that the spin effects are observed at such low values of $x$. The NLO QCD fit of $g_1$ world data gives well constrained quark helicity distributions; gluons are poorly determined. Quark helicity contribution to nucleon spin is $0.26 < \\Delta \\Sigma < 0.36$. From the COMPASS data alone the Bjorken sum rule is verified to $9\\%$ accuracy and the extracted flavour-singlet axial charge is $a_0 (Q^2 = 3 (\\text{GeV/}c)^2) = 0.32 \\pm 0.02_{stat.} \\pm 0.04_{syst.} \\pm 0.05_{evol.}$.
Transonic Dynamics Tunnel (TDT)
Federal Laboratory Consortium — The Transonic Dynamics Tunnel (TDT) is a continuous flow wind-tunnel facility capable of speeds up to Mach 1.2 at stagnation pressures up to one atmosphere. The TDT...
Razavy, Mohsen
2014-01-01
In this revised and expanded edition, in addition to a comprehensible introduction to the theoretical foundations of quantum tunneling based on different methods of formulating and solving tunneling problems, different semiclassical approximations for multidimensional systems are presented. Particular attention is given to the tunneling of composite systems, with examples taken from molecular tunneling and also from nuclear reactions. The interesting and puzzling features of tunneling times are given extensive coverage, and the possibility of measurement of these times with quantum clocks are critically examined. In addition by considering the analogy between evanescent waves in waveguides and in quantum tunneling, the times related to electromagnetic wave propagation have been used to explain certain aspects of quantum tunneling times. These topics are treated in both non-relativistic as well as relativistic regimes. Finally, a large number of examples of tunneling in atomic, molecular, condensed matter and ...
Department of Homeland Security — Tunnels in the United States According to the HSIP Tiger Team Report, a tunnel is defined as a linear underground passageway open at both ends. This dataset is based...
Hypersonic Tunnel Facility (HTF)
Federal Laboratory Consortium — The Hypersonic Tunnel Facility (HTF) is a blow-down, non-vitiated (clean air) free-jet wind tunnel capable of testing large-scale, propulsion systems at Mach 5, 6,...
Single-electron tunneling in double-barrier nanostructures
International Nuclear Information System (INIS)
Goldman, V.J.; Su, B.; Cunningham, J.E.
1992-01-01
In this paper, the authors review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models
New insights into nano-magnetism by spin-polarized scanning tunneling microscopy
Energy Technology Data Exchange (ETDEWEB)
Sander, Dirk, E-mail: sander@mpi-halle.de [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany); Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen [Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle/Saale (Germany)
2013-08-15
Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center.
New insights into nano-magnetism by spin-polarized scanning tunneling microscopy
International Nuclear Information System (INIS)
Sander, Dirk; Oka, Hirofumi; Corbetta, Marco; Stepanyuk, Valeri; Kirschner, Jürgen
2013-01-01
Highlights: ► We measure the magnetization reversal of individual nm small Co island by spin-STM. ► We identify an inhomogeneous magnetic anisotropy within a single Co island. ► The magnetic anisotropy near the rim is negligible as compared to 0.148 meV/atom at the island center. ► A crossover of the magnetization reversal from an exchange-spring behavior to domain wall formation is suggested. ► The impact of the observed spatial variation of the spin-dependent electronic properties on reversal is discussed. -- Abstract: We study the magnetization reversal and the position dependence of the spin-dependent electronic properties of nm small bilayer Co islands on Cu(1 1 1) by spin-polarized scanning tunneling microscopy in magnetic fields at low temperatures of 8 K. The analysis of the energy barrier of magnetization reversal from measurements of the switching field suggests a crossover of the magnetization reversal mode with increasing island size around 7500 atoms from exchange-spring behavior to domain wall formation. The quantitative analysis of the island size dependence of the energy barrier indicates an inhomogeneous magnetic anisotropy of the island. The island rim is magnetically soft, whereas the center shows a pronounced effective anisotropy of 0.148 meV/atom. We speculate that this inhomogeneity of the magnetic anisotropy might be a consequence of the spatial dependence of the spin-dependent electronic properties. We measure a spin-polarization and a tunnel magneto resistance ratio of opposite sign at the rim as compared to the island center
Inverse Tunnel Magnetocapacitance in Fe/Al-oxide/Fe3O4.
Kaiju, Hideo; Nagahama, Taro; Sasaki, Shun; Shimada, Toshihiro; Kitakami, Osamu; Misawa, Takahiro; Fujioka, Masaya; Nishii, Junji; Xiao, Gang
2017-06-01
Magnetocapacitance (MC) effect, observed in a wide range of materials and devices, such as multiferroic materials and spintronic devices, has received considerable attention due to its interesting physical properties and practical applications. A normal MC effect exhibits a higher capacitance when spins in the electrodes are parallel to each other and a lower capacitance when spins are antiparallel. Here we report an inverse tunnel magnetocapacitance (TMC) effect for the first time in Fe/AlO x /Fe 3 O 4 magnetic tunnel junctions (MTJs). The inverse TMC reaches up to 11.4% at room temperature and the robustness of spin polarization is revealed in the bias dependence of the inverse TMC. Excellent agreement between theory and experiment is achieved for the entire applied frequency range and the wide bipolar bias regions using Debye-Fröhlich model (combined with the Zhang formula and parabolic barrier approximation) and spin-dependent drift-diffusion model. Furthermore, our theoretical calculations predict that the inverse TMC effect could potentially reach 150% in MTJs with a positive and negative spin polarization of 65% and -42%, respectively. These theoretical and experimental findings provide a new insight into both static and dynamic spin-dependent transports. They will open up broader opportunities for device applications, such as magnetic logic circuits and multi-valued memory devices.
Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve.
Ma, Jing-Min; Zhao, Jia; Zhang, Kai-Cheng; Peng, Ya-Jing; Chi, Feng
2011-03-28
Spin-dependent transport through a quantum-dot (QD) ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR) as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively.PACS numbers:
Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve
Directory of Open Access Journals (Sweden)
Ma Jing-Min
2011-01-01
Full Text Available Abstract Spin-dependent transport through a quantum-dot (QD ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively. PACS numbers:
Degradation of magnetic tunnel junctions with thin AlOx barrier
Directory of Open Access Journals (Sweden)
Tadashi Mihara, Yoshinari Kamakura, Masato Morifuji and Kenji Taniguchi
2007-01-01
Full Text Available The degradation of magnetic tunnel junctions (MTJs with AlOx barrier was experimentally investigated. Constant voltage stress (CVS measurement was carried out to monitor the time evolution of the conductance and tunneling magnetoresistance (TMR of MTJs. The gradual increase of the stress-induced leakage current (SILC was observed prior to the breakdown, following a power law function of stress time with an exponent of about 0.2–0.4, which is similar to the case of the ultrathin gate oxide films in MOSFETs. The measured TMR for SILC suggests that the spin-dependent current component would be involved in the early stage of degradation, while spin-independent conduction becomes dominant before the breakdown resulting in a decrease of TMR.
Energy Technology Data Exchange (ETDEWEB)
Kondo, J.
1998-10-01
The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)
International Nuclear Information System (INIS)
Kondo, J.
1998-01-01
The tunneling rate of the proton and its isotopes between interstitial sites in solids is studied theoretically. The phonons and/or the electrons in the solid have two effects on the tunneling phenomenon. First, they suppress the transfer integral between two neighbouring states. Second, they give rise to a finite lifetime of the proton state. Usually the second effect is large and the tunneling probability per unit time (tunneling rate) can be defined. In some cases, however, a coherent tunneling is expected and actually observed. (author)
International Nuclear Information System (INIS)
Tullney, Kathlynne
2014-01-01
The standard model (SM) of particle physics describes all known particles and their interactions. However, the SM leaves many issues unresolved. For example, it only includes three of the four fundamental forces and does not clarify the question why in the strong interaction CP symmetry is violated due to its non-trivial vacuum structure is predicted (Θ-term), but experimentally unverifiable. The latter one is known as the strong CP-problem of quantum chromodynamics (QCD) and is solved by the Peccei-Quinn-Weinberg-Wilczek theory. This theory predicts a new and almost massless boson which is known as the axion. The axion feebly interacts with matter and therefore it is a good candidate for cold dark matter, too. Axions are produced by the Primakoff-effect, i.e. by conversion of photons which are scattered in the electromagnetic field, e.g. of atoms. The inverse Primakoff-effect, which converts axions to photons again, can be used for direct detection of galactic, solar, or laboratory axions. Cosmological and astrophysical observations constrain the mass of the axion from a few μeV to some meV (''axion mass window''). If the axion exists, then it mediates a CP violating, spin-dependent, short-range interaction between a fermion and the spin of another fermion. By verification of this interaction, the axion can be detected indirectly. In the framework of the present thesis an experiment to search for this spindependent short-range interaction was performed in the magnetically shielded room BMSR-2 of the Physikalisch-Technische Bundesanstalt Berlin. An ultra-sensitive low-field co-magnetometer was employed which is based on the detection of free precession of 3 He and 129 Xe nuclear spins using SQUIDs as low-noise magnetic flux detectors. The two nuclear spin polarized gases are filled into a glass cell which is immersed in a low magnetic field of about B 0 = 0.35 μT with absolute field gradients in the order of pT/cm. The spin precession frequencies of 3 He and 129
Mansikkamäki, Akseli; Popov, Alexey A.; Deng, Qingming; Iwahara, Naoya; Chibotaru, Liviu F.
2017-09-01
The magnetic properties and electronic structure of the ground and excited states of two recently characterized endohedral metallo-fullerenes, [Gd2@C78]- (1) and [Gd2@C80]- (2), have been studied by theoretical methods. The systems can be considered as [Gd2]5+ dimers encapsulated in a fullerene cage with the fifteen unpaired electrons ferromagnetically coupled into an S = 15/2 high-spin configuration in the ground state. The microscopic mechanisms governing the Gd-Gd interactions leading to the ferromagnetic ground state are examined by a combination of density functional and ab initio calculations and the full energy spectrum of the ground and lowest excited states is constructed by means of ab initio model Hamiltonians. The ground state is characterized by strong electron delocalization bordering on a σ type one-electron covalent bond and minor zero-field splitting (ZFS) that is successfully described as a second order spin-orbit coupling effect. We have shown that the observed ferromagnetic interaction originates from Hund's rule coupling and not from the conventional double exchange mechanism. The calculated ZFS parameters of 1 and 2 in their optimized geometries are in qualitative agreement with experimental EPR results. The higher excited states display less electron delocalization, but at the same time they possess unquenched first-order angular momentum. This leads to strong spin-orbit coupling and highly anisotropic energy spectrum. The analysis of the excited states presented here constitutes the first detailed study of the effects of spin-dependent delocalization in the presence of first order orbital angular momentum and the obtained results can be applied to other mixed valence lanthanide systems.
Time evolution of tunneling in a thermal medium: Environment-driven excited tunneling
International Nuclear Information System (INIS)
Matsumoto, Sh.; Yoshimura, M.
2004-01-01
Time evolution of tunneling phenomena proceeding in a thermal medium is studied using a standard model of environmental interaction. A semiclassical probability formula for the particle motion in a metastable state of a one-dimensional system put in a thermal medium is combined with the formula of the quantum penetration factor through a potential barrier to derive the tunneling rate in the medium. The effect of environment, its influence on time evolution in particular, is clarified in our real-time formalism. A nonlinear resonance effect is shown to enhance the tunneling rate at finite times of order 2/η, with η the friction coefficient unless η is too small. In the linear approximation this effect has relevance to the parametric resonance. This effect enhances the possibility of early termination of the cosmological phase transition much prior to the typical Hubble time
Modeling the neutron spin-flip process in a time-of-flight spin-resonance energy filter
Parizzi, A A; Klose, F
2002-01-01
A computer program for modeling the neutron spin-flip process in a novel time-of-flight (TOF) spin-resonance energy filter has been developed. The software allows studying the applicability of the device in various areas of spallation neutron scattering instrumentation, for example as a dynamic TOF monochromator. The program uses a quantum-mechanical approach to calculate the local spin-dependent spectra and is essential for optimizing the magnetic field profiles along the resonator axis. (orig.)
Statistical analysis of parameters of the uranium -238 resonances
International Nuclear Information System (INIS)
Nikolaev, M.N.; Abagyan, L.P.
1976-01-01
It has been shown that the distribution for 238 U p - levels can be in agreement with the theoretical one (Porter - Thomas distribution) only if the significant lack of p - levels in the experiments would be supposed. That means that density of 238 U levels with spin 1/2 is parity dependent, and therefore the whole number of p - resonances is 4.8 (instead of 3) times greater than the number of s - resonances in the same energy internal. With the assumption about spin dependence of strength function it is impossible to agree the experimental distribution with the theoretical one
International Nuclear Information System (INIS)
Wang, Z.S.; Lai, C.H.; Oh, C.H.; Kwek, L.C.
2004-01-01
We present a calculation of quantum tunneling time based on the transition duration of wave peak from one side of a barrier to the other. In our formulation, the tunneling time comprises a real and an imaginary part. The real part is an extension of the phase tunneling time with quantum corrections whereas the imaginary time is associated with energy derivatives of the probability amplitudes
Charge Islands Through Tunneling
Robinson, Daryl C.
2002-01-01
It has been recently reported that the electrical charge in a semiconductive carbon nanotube is not evenly distributed, but rather it is divided into charge "islands." This paper links the aforementioned phenomenon to tunneling and provides further insight into the higher rate of tunneling processes, which makes tunneling devices attractive. This paper also provides a basis for calculating the charge profile over the length of the tube so that nanoscale devices' conductive properties may be fully exploited.
International Nuclear Information System (INIS)
Olkhovsky, V.S.; Recami, E.
1991-08-01
In this paper, first we critically analyse the main theoretical definitions and calculations of the sub-barrier tunnelling and reflection times. Secondly, we propose a new, physically sensible definition of such durations, on the basis of a recent general formalism (already tested for other types of quantum collisions). At last, we discuss some results regarding temporal evolution of the tunnelling processes, and in particular the ''particle'' speed during tunnelling. (author). 36 refs, 1 fig
Microsystem Aeromechanics Wind Tunnel
Federal Laboratory Consortium — The Microsystem Aeromechanics Wind Tunnel advances the study of fundamental flow physics relevant to micro air vehicle (MAV) flight and assesses vehicle performance...
Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.
2018-01-01
Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.
Highly functional tunnelling devices integrated in 3D
DEFF Research Database (Denmark)
Wernersson, Lars-Erik; Lind, Erik; Lindström, Peter
2003-01-01
a new type of tunnelling transistor, namely a resonant-tunnelling permeable base transistor. A simple model based on a piece-wise linear approximation is used in Cadence to describe the current-voltage characteristics of the transistor. This model is further introduced into a small signal equivalent...... simultaneously on both tunnelling structures and the obtained characteristics are the result of the interplay between the two tunnelling structures and the gate. An equivalent circuit model is developed and we show how this interaction influences the current-voltage characteristics. The gate may be used......We present a new technology for integrating tunnelling devices in three dimensions. These devices are fabricated by the combination of the growth of semiconductor heterostructures with the controlled introduction of metallic elements into an epitaxial layer by an overgrowth technique. First, we use...
New Knowledge of tunneling from photonic experiments
International Nuclear Information System (INIS)
Nimtz, G.
1997-01-01
Photonic experiments have shown, that the propagation of evanescent (tunneling) modes can proceed at speeds faster than the velocity of light in vacuum (superluminal). The superluminal velocities include signal and energy propagation. The analogy between the classical Helmholtz equation and the quantum mechanical Schroedinger equation was quantitatively proved in classical photonic experiments. The Hartman effect, i.e. the prediction that the tunneling time is independent of the barrier length was for the first time evidenced in a photonic analogous tunneling experiment by Enders and Nimtz. It is also shown, that the resonant state life time is not determined by the barrier traversal time. For electronic tunneling devices it follows, that the quantum mechanical phase time calculations indeed deliver the relevant intrinsic tunneling time and consequently allow to predict the dynamical specification of a device. The present theoretical descriptions of the propagation of evanescent modes is not fully compatible with the experimental situation. Superluminal signal and energy transport has been measured, and this has to be properly analyzed. May the advanced field solutions help to obtain a satisfactory theoretical description of the recent experimental results of the propagation of evanescent modes? (author)
Q2 dependence of the spin structure function in the resonance region
International Nuclear Information System (INIS)
Li, Z.; Li, Z.
1994-01-01
In this paper, we show what we can learn from the CEBAF experiments on spin-structure functions, and the transition from the Drell-Hearn-Gerasimov sum rule in the real photon limit to the spin-dependent sum rules in deep inelastic scattering, and how the asymmetry A 1 (x,Q 2 ) approaches the scaling limit in the resonance region. The spin structure function in the resonance region alone cannot determine the spin-dependent sum rule due to the kinematic restriction of the resonance region. The integral ∫ 0 1 {A 1 (x,Q 2 )F 2 (x,Q 2 )/2x[1+R(x,Q 2 )]}dx is estimated from Q 2 =0--2.5 GeV 2 . The result shows that there is a region where both contributions from the baryon resonances and the deep inelastic scattering are important; thus it provides important information on the high twist effects on the spin-dependent sum rule
Ferroelectric tunnel junctions with multi-quantum well structures
Energy Technology Data Exchange (ETDEWEB)
Ma, Zhijun; Zhang, Tianjin, E-mail: zhangtj@hubu.edu.cn [Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan 430062 (China); Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China); Liang, Kun; Qi, Yajun; Wang, Duofa; Wang, Jinzhao; Jiang, Juan [Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062 (China)
2014-06-02
Ferroelectric tunnel junctions (FTJs) with multi-quantum well structures are proposed and the tunneling electroresistance (TER) effect is investigated theoretically. Compared with conventional FTJs with monolayer ferroelectric barriers, FTJs with single-well structures provide TER ratio improvements of one order of magnitude, while FTJs with optimized multi-well structures can enhance this improvement by another order of magnitude. It is believed that the increased resonant tunneling strength combined with appropriate asymmetry in these FTJs contributes to the improvement. These studies may help to fabricate FTJs with large TER ratio experimentally and put them into practice.
Fluctuations of tunneling currents in photonic and polaritonic systems
Mantsevich, V. N.; Glazov, M. M.
2018-04-01
Here we develop the nonequilibrium Green's function formalism to analyze the fluctuation spectra of the boson tunneling currents. The approach allows us to calculate the noise spectra in both equilibrium and nonequilibrium conditions. The proposed general formalism is applied to several important realizations of boson transport, including the tunneling transport between two reservoirs and the case where the boson current flows through the intermediate region between the reservoirs. Developed theory can be applied for the analysis of the current noise in waveguides, coupled optical resonators, quantum microcavities, etc., where the tunneling of photons, exciton-polaritons, or excitons can be realized.
Dynamical tunneling in systems with a mixed phase space
International Nuclear Information System (INIS)
Loeck, Steffen
2010-01-01
Tunneling is one of the most prominent features of quantum mechanics. While the tunneling process in one-dimensional integrable systems is well understood, its quantitative prediction for systems with a mixed phase space is a long-standing open challenge. In such systems regions of regular and chaotic dynamics coexist in phase space, which are classically separated but quantum mechanically coupled by the process of dynamical tunneling. We derive a prediction of dynamical tunneling rates which describe the decay of states localized inside the regular region towards the so-called chaotic sea. This approach uses a fictitious integrable system which mimics the dynamics inside the regular domain and extends it into the chaotic region. Excellent agreement with numerical data is found for kicked systems, billiards, and optical microcavities, if nonlinear resonances are negligible. Semiclassically, however, such nonlinear resonance chains dominate the tunneling process. Hence, we combine our approach with an improved resonance-assisted tunneling theory and derive a unified prediction which is valid from the quantum to the semiclassical regime. We obtain results which show a drastically improved accuracy of several orders of magnitude compared to previous studies. (orig.)
Dynamical tunneling in systems with a mixed phase space
Energy Technology Data Exchange (ETDEWEB)
Loeck, Steffen
2010-04-22
Tunneling is one of the most prominent features of quantum mechanics. While the tunneling process in one-dimensional integrable systems is well understood, its quantitative prediction for systems with a mixed phase space is a long-standing open challenge. In such systems regions of regular and chaotic dynamics coexist in phase space, which are classically separated but quantum mechanically coupled by the process of dynamical tunneling. We derive a prediction of dynamical tunneling rates which describe the decay of states localized inside the regular region towards the so-called chaotic sea. This approach uses a fictitious integrable system which mimics the dynamics inside the regular domain and extends it into the chaotic region. Excellent agreement with numerical data is found for kicked systems, billiards, and optical microcavities, if nonlinear resonances are negligible. Semiclassically, however, such nonlinear resonance chains dominate the tunneling process. Hence, we combine our approach with an improved resonance-assisted tunneling theory and derive a unified prediction which is valid from the quantum to the semiclassical regime. We obtain results which show a drastically improved accuracy of several orders of magnitude compared to previous studies. (orig.)
International Nuclear Information System (INIS)
Binnig, G.; Rohrer, H.
1983-01-01
Based on vacuum tunneling, a novel type of microscope, the scanning tunneling microscope (STM) was developed. It has an unprecedented resolution in real space on an atomic scale. The authors review the important technical features, illustrate the power of the STM for surface topographies and discuss its potential in other areas of science and technology. (Auth.)
Electron tunneling in chemistry
International Nuclear Information System (INIS)
Zamaraev, K.I.; Khajrutdinov, R.F.; Zhdanov, V.P.; Molin, Yu.N.
1985-01-01
Results of experimental and theoretical investigations are outlined systematically on electron tunnelling in chemical reactions. Mechanism of electron transport to great distances is shown to be characteristic to chemical compounds of a wide range. The function of tunnel reactions is discussed for various fields of chemistry, including radiation chemistry, electrochemistry, chemistry of solids, chemistry of surface and catalysis
Resonance contribution to electromagnetic structure functions
International Nuclear Information System (INIS)
Bowling, A.L. Jr.
1974-01-01
The part of the pion and proton electromagnetic structure functions due to direct channel resonances in the virtual Compton amplitude is discussed. After a phenomenological discussion, based on the work of Bloom and Gilman, of resonance production in inelastic electroproduction, the single resonance contribution to the pion and proton structure functions is expressed in terms of transition form factors. Froissart-Gribov representations of the Compton amplitude partial waves are presented and are used to specify the spin dependence of the transition form factors. The dependence of the form factors on momentum transfer and resonance mass is assumed on the basis of the behavior of exclusive resonance electroproduction. The single resonance contributions are summed in the Bjorken limit, and the result exhibits Bjorken scaling. Transverse photons are found to dominate in the Bjorken limit, and the threshold behavior of the resonant part of the structure functions is related to the asymptotic behavior of exclusive form factors at large momentum transfer. The resonant parts of the annihilation structure functions are not in general given by simple analytic continuation in the scaling vari []ble ω' of the electroproduction structure functions. (Diss. Abstr. Int., B)
International Nuclear Information System (INIS)
Watabe, Shohei; Ohashi, Yoji; Kato, Yusuke
2011-01-01
We investigate tunneling properties of collective modes in the polar phase of a spin-1 spinor Bose-Einstein condensate (BEC). This spinor BEC state has two kinds of gapless modes (i.e., Bogoliubov and spin-wave). Within the framework of mean-field theory at T=0, we show that these Goldstone modes exhibit perfect transmission in the low-energy limit. Their anomalous tunneling behavior still holds in the presence of superflow, except in the critical current state. In the critical current state, while the tunneling of Bogoliubov mode is accompanied by finite reflection, the spin wave still exhibits perfect transmission, unless the strengths of spin-dependent and spin-independent interactions take the same value. We discuss the relation between perfect transmission of a spin wave and underlying superfluidity through a comparison of wave functions of the spin wave and the condensate.
Ingason, Haukur; Lönnermark, Anders
2015-01-01
This book covers a wide range of issues in fire safety engineering in tunnels, describes the phenomena related to tunnel fire dynamics, presents state-of-the-art research, and gives detailed solutions to these major issues. Examples for calculations are provided. The aim is to significantly improve the understanding of fire safety engineering in tunnels. Chapters on fuel and ventilation control, combustion products, gas temperatures, heat fluxes, smoke stratification, visibility, tenability, design fire curves, heat release, fire suppression and detection, CFD modeling, and scaling techniques all equip readers to create their own fire safety plans for tunnels. This book should be purchased by any engineer or public official with responsibility for tunnels. It would also be of interest to many fire protection engineers as an application of evolving technical principles of fire safety.
The two Josephson junction flux qubit with large tunneling amplitude
International Nuclear Information System (INIS)
Shnurkov, V.I.; Soroka, A.A.; Mel'nik, S.I.
2008-01-01
In this paper we discuss solid-state nanoelectronic realizations of Josephson flux qubits with large tunneling amplitude between the two macroscopic states. The latter can be controlled via the height and form of the potential barrier, which is determined by quantum-state engineering of the flux qubit circuit. The simplest circuit of the flux qubit is a superconducting loop interrupted by a Josephson nanoscale tunnel junction. The tunneling amplitude between two macroscopically different states can be increased substantially by engineering of the qubit circuit if the tunnel junction is replaced by a ScS contact. However, only Josephson tunnel junctions are particularly suitable for large-scale integration circuits and quantum detectors with present-day technology. To overcome this difficulty we consider here a flux qubit with high energy-level separation between the 'ground' and 'excited' states, consisting of a superconducting loop with two low-capacitance Josephson tunnel junctions in series. We demonstrate that for real parameters of resonant superposition between the two macroscopic states the tunneling amplitude can reach values greater than 1 K. Analytical results for the tunneling amplitude obtained within the semiclassical approximation by the instanton technique show good correlation with a numerical solution
On the tunneling time of ultracold atoms through a system of two mazer cavities.
Badshah, Fazal; Ge, Guo-Qin; Irfan, Muhammad; Qamar, Sajid; Qamar, Shahid
2018-01-30
We study the resonant tunneling of ultraslow atoms through a system of high quality microwave cavities. We find that the phase tunneling time across the two coupled cavities exhibits more frequent resonances as compared to the single cavity interaction. The increased resonances are instrumental in the display of an alternate sub and superclassical character of the tunneling time along the momentum axis with increasing energies of the incident slow atoms. Here, the intercavity separation appears as an additional controlling parameter of the system that provides an efficient control of the superclassical behavior of the phase tunneling time. Further, we find that the phase time characteristics through two cavity system has the combined features of the tunneling through a double barrier and a double well arrangements.
Ultrafast scanning tunneling microscopy
Energy Technology Data Exchange (ETDEWEB)
Botkin, D.A. [California Univ., Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley Lab., CA (United States)
1995-09-01
I have developed an ultrafast scanning tunneling microscope (USTM) based on uniting stroboscopic methods of ultrafast optics and scanned probe microscopy to obtain nanometer spatial resolution and sub-picosecond temporal resolution. USTM increases the achievable time resolution of a STM by more than 6 orders of magnitude; this should enable exploration of mesoscopic and nanometer size systems on time scales corresponding to the period or decay of fundamental excitations. USTM consists of a photoconductive switch with subpicosecond response time in series with the tip of a STM. An optical pulse from a modelocked laser activates the switch to create a gate for the tunneling current, while a second laser pulse on the sample initiates a dynamic process which affects the tunneling current. By sending a large sequence of identical pulse pairs and measuring the average tunnel current as a function of the relative time delay between the pulses in each pair, one can map the time evolution of the surface process. USTM was used to measure the broadband response of the STM`s atomic size tunnel barrier in frequencies from tens to hundreds of GHz. The USTM signal amplitude decays linearly with the tunnel junction conductance, so the spatial resolution of the time-resolved signal is comparable to that of a conventional STM. Geometrical capacitance of the junction does not appear to play an important role in the measurement, but a capacitive effect intimately related to tunneling contributes to the measured signals and may limit the ultimate resolution of the USTM.
Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions
International Nuclear Information System (INIS)
Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy
2011-01-01
Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.
Tunneling current between graphene layers
Poklonski, Nikolai A.; Siahlo, Andrei I.; Vyrko, Sergey A.; Popov, Andrey M.; Lozovik, Yurii E.
2013-01-01
The physical model that allows to calculate the values of the tunneling current be-tween graphene layers is proposed. The tunneling current according to the pro-posed model is proportional to the area of tunneling transition. The calculated value of tunneling conductivity is in qualitative agreement with experimental data.
Tibial tunnel and pretibial cysts following ACL graft reconstruction: MR imaging diagnosis
Energy Technology Data Exchange (ETDEWEB)
Ghazikhanian, Varand [Brigham and Women' s Hospital, Musculoskeletal Imaging and Intervention, Department of Radiology, Boston, MA (United States); Beltran, Javier [Maimonides Medical Center, Brooklyn, NY (United States); Nikac, Violeta [Maimonides Medical Center, Department of Radiology, Brooklyn, NY (United States); Bencardino, Jenny T. [NYU Hospital for Joint Diseases, New York, NY (United States); Feldman, Marina
2012-11-15
Tunnel cyst formation is a rare complication after anterior cruciate ligament reconstruction, usually occurring 1-5 years post-operatively, which may occasionally be symptomatic. There are multiple proposed theories regarding the etiology of tunnel cysts. Theories include necrosis, foreign-body reaction, lack of complete graft osteo-integration, and intravasation of articular fluid. It is important to know if the tunnel cysts are communicating or not communicating with the joint, as surgical management may be different. Imaging characteristics on magnetic resonance images (MRI) include tibial tunnel widening, multilocular or unilocular cyst formation in the graft or tibial tunnel, with possible extension into the pretibial space, intercondylar notch, and/or popliteal fossa. The MR imaging differential diagnosis of tibial tunnel cysts includes infection, foreign-body granuloma, or tibial screw extrusion. Importantly, to the best of our knowledge, graft failure or instability has not been reported in association with tibial tunnel cysts. (orig.)
Altfeder, Igor; Voevodin, Andrey A; Roy, Ajit K
2010-10-15
Field-induced phonon tunneling, a previously unknown mechanism of interfacial thermal transport, has been revealed by ultrahigh vacuum inelastic scanning tunneling microscopy (STM). Using thermally broadened Fermi-Dirac distribution in the STM tip as in situ atomic-scale thermometer we found that thermal vibrations of the last tip atom are effectively transmitted to sample surface despite few angstroms wide vacuum gap. We show that phonon tunneling is driven by interfacial electric field and thermally vibrating image charges, and its rate is enhanced by surface electron-phonon interaction.
Sander, Dirk; Phark, Soo-Hyon; Corbetta, Marco; Fischer, Jeison A; Oka, Hirofumi; Kirschner, Jürgen
2014-10-01
The application of low temperature spin-polarized scanning tunneling microscopy and spectroscopy in magnetic fields for the quantitative characterization of spin polarization, magnetization reversal and magnetic anisotropy of individual nano structures is reviewed. We find that structural relaxation, spin polarization and magnetic anisotropy vary on the nm scale near the border of a bilayer Co island on Cu(1 1 1). This relaxation is lifted by perimetric decoration with Fe. We discuss the role of spatial variations of the spin-dependent electronic properties within and at the edge of a single nano structure for its magnetic properties.
Energy Technology Data Exchange (ETDEWEB)
Kwon, C.; Jia, Q.X.; Fan, Y.; Hundley, M.F.; Reagor, D.W.; Hawley, M.E.; Peterson, D.E.
1998-07-01
The authors report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La{sub 0.7}Sr{sub 0.3})MnO{sub 3} ferromagnetic electrodes and a SrTiO{sub 3} insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30% is observed below 300 Oe at low temperatures (T < 100 K).
Quantum gases. Observation of many-body dynamics in long-range tunneling after a quantum quench.
Meinert, Florian; Mark, Manfred J; Kirilov, Emil; Lauber, Katharina; Weinmann, Philipp; Gröbner, Michael; Daley, Andrew J; Nägerl, Hanns-Christoph
2014-06-13
Quantum tunneling is at the heart of many low-temperature phenomena. In strongly correlated lattice systems, tunneling is responsible for inducing effective interactions, and long-range tunneling substantially alters many-body properties in and out of equilibrium. We observe resonantly enhanced long-range quantum tunneling in one-dimensional Mott-insulating Hubbard chains that are suddenly quenched into a tilted configuration. Higher-order tunneling processes over up to five lattice sites are observed as resonances in the number of doubly occupied sites when the tilt per site is tuned to integer fractions of the Mott gap. This forms a basis for a controlled study of many-body dynamics driven by higher-order tunneling and demonstrates that when some degrees of freedom are frozen out, phenomena that are driven by small-amplitude tunneling terms can still be observed. Copyright © 2014, American Association for the Advancement of Science.
Search for Spin Filtering By Electron Tunneling Through Ferromagnetic EuS Barriers in Pbs
Figielski, T.; Morawski, A.; Wosinski, T.; Wrotek, S.; Makosa, A.; Lusakowska, E.; Story, T.; Sipatov, A. Yu.; Szczerbakow, A.; Grasza, K.;
2002-01-01
Perpendicular transport through single- and double-barrier heterostructures consisting of ferromagnetic EuS layers embedded into PbS matrix was investigated. Manifestations of both resonant tunneling and spin filtering through EuS barrier have been observed.
Quantum tunneling with friction
Tokieda, M.; Hagino, K.
2017-05-01
Using the phenomenological quantum friction models introduced by P. Caldirola [Nuovo Cimento 18, 393 (1941), 10.1007/BF02960144] and E. Kanai [Prog. Theor. Phys. 3, 440 (1948), 10.1143/ptp/3.4.440], M. D. Kostin [J. Chem. Phys. 57, 3589 (1972), 10.1063/1.1678812], and K. Albrecht [Phys. Lett. B 56, 127 (1975), 10.1016/0370-2693(75)90283-X], we study quantum tunneling of a one-dimensional potential in the presence of energy dissipation. To this end, we calculate the tunneling probability using a time-dependent wave-packet method. The friction reduces the tunneling probability. We show that the three models provide similar penetrabilities to each other, among which the Caldirola-Kanai model requires the least numerical effort. We also discuss the effect of energy dissipation on quantum tunneling in terms of barrier distributions.
Wind Tunnel Testing Facilities
Federal Laboratory Consortium — NASA Ames Research Center is pleased to offer the services of our premier wind tunnel facilities that have a broad range of proven testing capabilities to customers...
Directory of Open Access Journals (Sweden)
Florin MUNTEANU
2009-09-01
Full Text Available The 1.2 m x 1.2 m Trisonic Blowdown Wind Tunnel is the largest of the experimental facilities at the National Institute for Aerospace Research - I.N.C.A.S. "Elie Carafoli", Bucharest, Romania. The tunnel has been designed by the Canadian company DSMA (now AIOLOS and since its commissioning in 1978 has performed high speed aerodynamic tests for more than 120 projects of aircraft, missiles and other objects among which the twin jet fighter IAR-93, the jet trainer IAR-99, the MIG-21 Lancer, the Polish jet fighter YRYDA and others. In the last years the wind tunnel has been used mostly for experimental research in European projects such as UFAST. The high flow quality parameters and the wide range of testing capabilities ensure the competitivity of the tunnel at an international level.
1993-10-01
DP /etc/tunnelvisa p zephyr dark -star TCP /etc/tunnelvisa p zephyr dak’star ICMP /etc/tunnelvisa p zephyr quark MDP /etc/tunnelvisa p zephyr quark ...drax-net-yp 128.9.32.2 1 route add quark -net-yp 128.9.32.3 1 route add vlsi-net-yp 128.9.32.4 1 route add darkstar-net-yp 128.9.32.3 1 route add rocky...TCP /etc/tunnel-visa p zephyr quark ICMP /etc/tunnel-visa p zephyr drax tTI)P /etc/tunnel-visa p zephyr drax TCP /etc/tunnel_visa p zephyr drax ICMP
Federal Laboratory Consortium — This ARDEC facility consists of subsonic, transonic, and supersonic wind tunnels to acquire aerodynamic data. Full-scale and sub-scale models of munitions are fitted...
Federal Laboratory Consortium — NETL’s High-Pressure Water Tunnel Facility in Pittsburgh, PA, re-creates the conditions found 3,000 meters beneath the ocean’s surface, allowing scientists to study...
The Beginner's Guide to Wind Tunnels with TunnelSim and TunnelSys
Benson, Thomas J.; Galica, Carol A.; Vila, Anthony J.
2010-01-01
The Beginner's Guide to Wind Tunnels is a Web-based, on-line textbook that explains and demonstrates the history, physics, and mathematics involved with wind tunnels and wind tunnel testing. The Web site contains several interactive computer programs to demonstrate scientific principles. TunnelSim is an interactive, educational computer program that demonstrates basic wind tunnel design and operation. TunnelSim is a Java (Sun Microsystems Inc.) applet that solves the continuity and Bernoulli equations to determine the velocity and pressure throughout a tunnel design. TunnelSys is a group of Java applications that mimic wind tunnel testing techniques. Using TunnelSys, a team of students designs, tests, and post-processes the data for a virtual, low speed, and aircraft wing.
Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes
International Nuclear Information System (INIS)
Tabe, Michiharu; Tan, Hoang Nhat; Mizuno, Takeshi; Muruganathan, Manoharan; Anh, Le The; Mizuta, Hiroshi; Nuryadi, Ratno; Moraru, Daniel
2016-01-01
We study low-temperature transport properties of two-dimensional (2D) Si tunnel diodes, or Si Esaki diodes, with a lateral layout. In ordinary Si Esaki diodes, interband tunneling current is severely limited because of the law of momentum conservation, while nanoscale Esaki diodes may behave differently due to the dopants in the narrow depletion region, by atomistic effects which release such current limitation. In thin-Si lateral highly doped pn diodes, we find clear signatures of interband tunneling between 2D-subbands involving phonon assistance. More importantly, the tunneling current is sharply enhanced in a narrow voltage range by resonance via a pair of a donor- and an acceptor-atom in the pn junction region. Such atomistic behavior is recognized as a general feature showing up only in nanoscale tunnel diodes. In particular, a donor-acceptor pair with deeper ground-state energies is likely to be responsible for such a sharply enhanced current peak, tunable by external biases.
International Nuclear Information System (INIS)
Jarvis, P.D.; Bulte, D.P.
1998-01-01
A quantum-mechanical description of tunnelling is presented for a one-dimensional system with internal oscillator degrees of freedom. The 'charged diatomic molecule' is frustrated on encountering a barrier potential by its centre of charge not being coincident with its centre of mass, resulting in transitions amongst internal states. In an adiabatic limit, the tunnelling of semiclassical coherent-like oscillator states is shown to exhibit the Hartman and Bueuttiker-Landauer times t H and t BL , with the time dependence of the coherent state parameter for the tunnelled state given by α(t) = α e -iω(t+Δt) , Δt = t H - it BL . A perturbation formalism is developed, whereby the exact transfer matrix can be expanded to any desired accuracy in a suitable limit. An 'intrinsic' time, based on the oscillator transition rate during tunnelling, transmission or reflection, is introduced. In simple situations the resulting intrinsic tunnelling time is shown to vanish to lowest order. In the general case a particular (nonzero) parametrisation is inferred, and its properties discussed in comparison with the literature on tunnelling times for both wavepackets and internal clocks. Copyright (1998) CSIRO Australia
Tunneling processes into localized subgap states in superconductors
Energy Technology Data Exchange (ETDEWEB)
Ruby, Michael; Heinrich, Benjamin W.; Franke, Katharina J. [Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Pientka, Falko; Peng, Yang; Oppen, Felix von [Freie Universitaet Berlin, Arnimallee 14, 14195 Berlin (Germany); Dahlem Center for Complex Quantum Systems, Freie Universitaet Berlin, 14195 Berlin (Germany)
2016-07-01
The Yu-Shiba-Rusinov states bound by magnetic impurities in conventional s-wave superconductors are a simple model system for probing the competition between superconducting and magnetic correlations. Shiba states can be observed in scanning tunneling spectroscopy (STS) as a pair of resonances at positive and negative bias voltages in the superconducting gap. These resonances have been interpreted in terms of single-electron tunneling into the localized sub-gap states. This requires relaxation mechanisms that depopulate the state after an initial tunneling event. Recently, theory suggests that the current can also be carried by Andreev processes which resonantly transfer a Cooper pair into the superconductor. We performed high-resolution STS experiments on single adatom Shiba states on the superconductor Pb, and provide evidence for the existence of two transport regimes. The single-electron processes dominate at large tip-sample distances and small tunneling currents, whereas Andreev processes become important at stronger tunneling. Our conclusions are based on a careful comparison of experiment and theory.
Study of tunneling time with Larmor clock and neutron absorption
International Nuclear Information System (INIS)
Hino, M.; Tasaki, S.; Ebisawa, T.; Kawai, T.; Utsuro, M.; Achiwa, N.
2001-01-01
Tunnel effect is one of the most typical quantum mechanical phenomena which cannot be understood in the classical physics. Though the tunnel phenomenon itself is precisely defined on the basis of quantum mechanics, tunneling time, the time for a particle to pass a tunnel barrier, has been a controversial issue because time is a parameter to show the rate of change of physical phenomena in quantum mechanics but has no corresponding quantum operator. In the present study, Larmor precession of the neutrons passing a Permalloy45 (PA) thin film was measured as a function of neutron incident angle to the film by using neutron spin-echo instrument at KUR and neutron interferometer at JRR-3. Results are compared with a calculation based on one-dimensional Schroedinger equation. The agreement between the experiment and the plane-wave simulation is very good which means that the neutrons are not described in particle picture here, and the Larmor time defined as number of spin precession divided by angular velocity no more represents the time for a particle to pass the barrier although it is a kind of the phase time. In order to emphasize the particle picture, effects of neutron absorption were considered theoretically. Larmor precession passing through a Fabry-Perot magnetic thin film which has two potential barriers (quantum well) for up-spin neutrons were measured for two cases that the film is hot neutron absorptive (PA-Ge-PA) and strongly absorptive (Se-Ge/Gd-Se). Here Ge, Gd and Se represent germanium, gadolinium and Supersendust, respectively. While down-spin neutrons feel only a small potential barrier. Spin-dependent reflectivity and transmission of the Fabry-Perot magnetic films were also measured as functions of the neutron incident angle to the film. Experimental results of the non-absorptive film show that the neutron spin precession cannot be treated as the classical motion of a magnetic moment feeling torque under applied magnetic field like the Larmor
The dynamical conductance of graphene tunnelling structures
International Nuclear Information System (INIS)
Zhang Huan; Chan, K S; Lin Zijing
2011-01-01
The dynamical conductances of graphene tunnelling structures were numerically calculated using the scattering matrix method with the interaction effect included in a phenomenological approach. The overall single-barrier dynamical conductance is capacitative. Transmission resonances in the single-barrier structure lead to dips in the capacitative imaginary part of the response. This is different from the ac responses of typical semiconductor nanostructures, where transmission resonances usually lead to inductive peaks. The features of the dips depend on the Fermi energy. When the Fermi energy is below half of the barrier height, the dips are sharper. When the Fermi energy is higher than half of the barrier height, the dips are broader. Inductive behaviours can be observed in a double-barrier structure due to the resonances formed by reflection between the two barriers.
The dynamical conductance of graphene tunnelling structures.
Zhang, Huan; Chan, K S; Lin, Zijing
2011-12-16
The dynamical conductances of graphene tunnelling structures were numerically calculated using the scattering matrix method with the interaction effect included in a phenomenological approach. The overall single-barrier dynamical conductance is capacitative. Transmission resonances in the single-barrier structure lead to dips in the capacitative imaginary part of the response. This is different from the ac responses of typical semiconductor nanostructures, where transmission resonances usually lead to inductive peaks. The features of the dips depend on the Fermi energy. When the Fermi energy is below half of the barrier height, the dips are sharper. When the Fermi energy is higher than half of the barrier height, the dips are broader. Inductive behaviours can be observed in a double-barrier structure due to the resonances formed by reflection between the two barriers.
Spin-resolved tunneling studies of the exchange field in EuS/Al bilayers.
Xiong, Y M; Stadler, S; Adams, P W; Catelani, G
2011-06-17
We use spin-resolved electron tunneling to study the exchange field in the Al component of EuS/Al bilayers, in both the superconducting and normal-state phases of the Al. Contrary to expectation, we show that the exchange field H(ex) is a nonlinear function of applied field, even in applied fields that are well beyond the EuS coercive field. Furthermore, the magnitude H(ex) is unaffected by the superconducting phase. In addition, H(ex) decreases significantly with increasing temperature in the temperature range of 0.1-1 K. We discuss these results in the context of recent theories of generalized spin-dependent boundary conditions at a superconductor-ferromagnet interface.
Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet
Xie, Haiqing; Wang, Qiang; Xue, Hai-Bin; Jiao, HuJun; Liang, J.-Q.
2013-06-01
We investigate theoretically the effects of intrinsic spin-relaxation on the spin-dependent transport through a single-molecule magnet (SMM), which is weakly coupled to ferromagnetic leads. The tunnel magnetoresistance (TMR) is obtained by means of the rate-equation approach including not only the sequential but also the cotunneling processes. It is shown that the TMR is strongly suppressed by the fast spin-relaxation in the sequential region and can vary from a large positive to slight negative value in the cotunneling region. Moreover, with an external magnetic field along the easy-axis of SMM, a large negative TMR is found when the relaxation strength increases. Finally, in the high bias voltage limit the TMR for the negative bias is slightly larger than its characteristic value of the sequential region; however, it can become negative for the positive bias caused by the fast spin-relaxation.
Resonant inelastic scattering by use of geometrical optics.
Schulte, Jörg; Schweiger, Gustav
2003-02-01
We investigate the inelastic scattering on spherical particles that contain one concentric inclusion in the case of input and output resonances, using a geometrical optics method. The excitation of resonances is included in geometrical optics by use of the concept of tunneled rays. To get a quantitative description of optical tunneling on spherical surfaces, we derive appropriate Fresnel-type reflection and transmission coefficients for the tunneled rays. We calculate the inelastic scattering cross section in the case of input and output resonances and investigate the influence of the distribution of the active material in the particle as well as the influence of the inclusion on inelastic scattering.
Inter-ribbon tunneling in graphene: An atomistic Bardeen approach
Energy Technology Data Exchange (ETDEWEB)
Van de Put, Maarten L., E-mail: maarten.vandeput@uantwerpen.be; Magnus, Wim [Department of Physics, Universiteit Antwerpen, B-2020 Antwerpen (Belgium); imec, B-3001 Heverlee (Belgium); Vandenberghe, William G.; Fischetti, Massimo V. [Department of Material Science, University of Texas at Dallas, Texas 75080 (United States); Sorée, Bart [Department of Physics, Universiteit Antwerpen, B-2020 Antwerpen (Belgium); imec, B-3001 Heverlee (Belgium); Department of Electrical Engineering, KU Leuven, B-3001 Leuven (Belgium)
2016-06-07
A weakly coupled system of two crossed graphene nanoribbons exhibits direct tunneling due to the overlap of the wavefunctions of both ribbons. We apply the Bardeen transfer Hamiltonian formalism, using atomistic band structure calculations to account for the effect of the atomic structure on the tunneling process. The strong quantum-size confinement of the nanoribbons is mirrored by the one-dimensional character of the electronic structure, resulting in properties that differ significantly from the case of inter-layer tunneling, where tunneling occurs between bulk two-dimensional graphene sheets. The current-voltage characteristics of the inter-ribbon tunneling structures exhibit resonance, as well as stepwise increases in current. Both features are caused by the energetic alignment of one-dimensional peaks in the density-of-states of the ribbons. Resonant tunneling occurs if the sign of the curvature of the coupled energy bands is equal, whereas a step-like increase in the current occurs if the signs are opposite. Changing the doping modulates the onset-voltage of the effects as well as their magnitude. Doping through electrostatic gating makes these structures promising for application towards steep slope switching devices. Using the atomistic empirical pseudopotentials based Bardeen transfer Hamiltonian method, inter-ribbon tunneling can be studied for the whole range of two-dimensional materials, such as transition metal dichalcogenides. The effects of resonance and of step-like increases in the current we observe in graphene ribbons are also expected in ribbons made from these alternative two-dimensional materials, because these effects are manifestations of the one-dimensional character of the density-of-states.
Tunneling of heat: Beyond linear response regime
Walczak, Kamil; Saroka, David
2018-02-01
We examine nanoscale processes of heat (energy) transfer as carried by electrons tunneling via potential barriers and molecular interconnects between two heat reservoirs (thermal baths). For that purpose, we use Landauer-type formulas to calculate thermal conductance and quadratic correction to heat flux flowing via quantum systems. As an input, we implement analytical expressions for transmission functions related to simple potential barriers and atomic bridges. Our results are discussed with respect to energy of tunneling electrons, temperature, the presence of resonant states, and specific parameters characterizing potential barriers as well as heat carriers. The simplicity of semi-analytical models developed by us allows to fit experimental data and extract crucial information about the values of model parameters. Further investigations are expected for more realistic transmission functions, while time-dependent aspects of nanoscale heat transfer may be addressed by using the concept of wave packets scattered on potential barriers and point-like defects within regular (periodic) nanostructures.
Delay time and tunneling transient phenomena
International Nuclear Information System (INIS)
Garcia-Calderon, Gaston; Villavicencio, Jorge
2002-01-01
Analytic solutions to the time-dependent Schroedinger equation for cutoff wave initial conditions are used to investigate the time evolution of the transmitted probability density for tunneling. For a broad range of values of the potential barrier opacity α, we find that the probability density exhibits two evolving structures. One refers to the propagation of a forerunner related to a time domain resonance [Phys. Rev. A 64, 0121907 (2001)], while the other consists of a semiclassical propagating wave front. We find a regime where the forerunners are absent, corresponding to positive time delays, and show that this regime is characterized by opacities α c . The critical opacity α c is derived from the analytical expression for the delay time, which reflects a link between transient effects in tunneling and the delay time