Spin dependent disorder in a junction device with spin orbit couplings

International Nuclear Information System (INIS)

Ganguly, Sudin; Basu, Saurabh

2016-01-01

Using the multi-probe Landauer-BUttiker formula and Green's function approach, we calculate the longitudinal conductance (LC) and spin Hall conductance (SHC) numerically in a two-dimensional junction system with the Rashba and Dresselhaus spin orbit coupling (SOC) and spin dependent disorder (SDD) in presence of both random onsite and hopping disorder strengths. It has been found that when the strengths of the RSOC and DSOC are same, the SHC vanishes. Further in presence of random onsite or hopping disorder, the SHC is still zero when the strengths of the two types of SOC, that is Rashba and Dressselhaus are the same. This indicates that the cancellation of SHC is robust even in the presence of random disorder. Only with the inclusion of SDD (onsite or hopping), a non-zero SHC is found and it increases as the strength of SDD increases. The physical implication of the existence of a non-zero SHC has been explored in this work. Finally, we have compared the effect of onsite SDD and hopping SDD on both longitudinal and spin Hall conductances. (paper)

Conductance and spin polarization for a quantum wire with the competition of Rashba and Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Fu Xi; Chen Zeshun; Zhong Feng; Zhou Guanghui

2010-01-01

We investigate theoretically the spin transport of a quantum wire (QW) with weak Rashba and Dresselhaus spin-orbit coupling (SOC) nonadiabatically connected to two normal leads. Using scattering matrix method and Landauer-Buettiker formula within effective free-electron approximation, we have calculated spin-dependent conductances G ↑ and G ↓ , total conductance G and spin polarization P z for a hard-wall potential confined QW. It is demonstrated that, the SOCs induce the splitting of G ↑ and G ↓ and form spin polarization P z . Moreover, the conductances present quantized plateaus, the plateaus and P z show oscillation structures near the subband edges. Furthermore, with the increase of QW width a strong spin polarization (P z ∼1) gradually becomes weak, which can be used to realize a spin filter. When the two SOCs coexist, the total conductance presents an isotropy transport due to the Rashba and Dresselhaus Hamiltonians being fixed, and the alteration of two SOCs strength ratio changes the sign of spin polarization. This may provide a way of realizing the expression of unit information by tuning gate voltage.

How to realize a spin-dependent Seebeck diode effect in metallic zigzag γ-graphyne nanoribbons?

Science.gov (United States)

Wu, Dan-Dan; Liu, Qing-Bo; Fu, Hua-Hua; Wu, Ruqian

2017-11-30

The spin-dependent Seebeck effect (SDSE) is one of the core topics of spin caloritronics. In the traditional device designs of spin-dependent Seebeck rectifiers and diodes, finite spin-dependent band gaps of materials are required to realize the on-off characteristic in thermal spin currents, and nearly zero charge current should be achieved to reduce energy dissipation. Here, we propose that two ferromagnetic zigzag γ-graphyne nanoribbons (ZγGNRs) without any spin-dependent band gaps around the Fermi level can not only exhibit the SDSE, but also display rectifier and diode effects in thermal spin currents characterized by threshold temperatures, which originates from the compensation effect occurring in spin-dependent transmissions but not from the spin-splitting band gaps in materials. The metallic characteristics of ZγGNRs bring about an advantage that the gate voltage is an effective route to adjust the symmetry of spin-splitting bands to obtain pure thermal spin currents. The results provide a new mechanism to realize spin-Seebeck rectifier and diode effects in 2D materials and expand material candidates towards spin-Seebeck device applications.

Electric-field effects in optically generated spin transport

International Nuclear Information System (INIS)

Miah, M. Idrish

2009-01-01

Transport of spin-polarized electrons in semiconductors is studied experimentally. Spins are generated by optical excitation because of the selection rules governing optical transitions from heavy-hole and light-hole states to conduction-band states. Experiments designed for the control of spins in semiconductors investigate the bias-dependent spin transport process and detect the spin-polarized electrons during transport. A strong bias dependence is observed. The electric-field effects on the spin-polarized electron transport are also found to be depended on the excitation photon energy and temperature. Based on a field-dependent spin relaxation mechanism, the electric-field effects in the transport process are discussed.

Electric-field effects in optically generated spin transport

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2009-05-25

Transport of spin-polarized electrons in semiconductors is studied experimentally. Spins are generated by optical excitation because of the selection rules governing optical transitions from heavy-hole and light-hole states to conduction-band states. Experiments designed for the control of spins in semiconductors investigate the bias-dependent spin transport process and detect the spin-polarized electrons during transport. A strong bias dependence is observed. The electric-field effects on the spin-polarized electron transport are also found to be depended on the excitation photon energy and temperature. Based on a field-dependent spin relaxation mechanism, the electric-field effects in the transport process are discussed.

Electron spin polarization induced by spin Hall effect in semiconductors with a linear in the momentum spin-orbit splitting of conduction band

OpenAIRE

Korenev, V. L.

2005-01-01

It is shown that spin Hall effect creates uniform spin polarization of electrons in semiconductor with a linear in the momentum spin splitting of conduction band. In turn, the profile of the non-uniform spin polarization accumulated at the edge of the sample oscillates in space even in the absence of an external magnetic field.

Spin-polarization and spin-dependent logic gates in a double quantum ring based on Rashba spin-orbit effect: Non-equilibrium Green's function approach

International Nuclear Information System (INIS)

Eslami, Leila; Esmaeilzadeh, Mahdi

2014-01-01

Spin-dependent electron transport in an open double quantum ring, when each ring is made up of four quantum dots and threaded by a magnetic flux, is studied. Two independent and tunable gate voltages are applied to induce Rashba spin-orbit effect in the quantum rings. Using non-equilibrium Green's function formalism, we study the effects of electron-electron interaction on spin-dependent electron transport and show that although the electron-electron interaction induces an energy gap, it has no considerable effect when the bias voltage is sufficiently high. We also show that the double quantum ring can operate as a spin-filter for both spin up and spin down electrons. The spin-polarization of transmitted electrons can be tuned from −1 (pure spin-down current) to +1 (pure spin-up current) by changing the magnetic flux and/or the gates voltage. Also, the double quantum ring can act as AND and NOR gates when the system parameters such as Rashba coefficient are properly adjusted

ac spin-Hall effect

International Nuclear Information System (INIS)

Entin-Wohlman, O.

2005-01-01

Full Text:The spin-Hall effect is described. The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field E(ω) generates a spin-polarization current, normal to E, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to ω 2 . At non-zero temperatures the coupling to the phonons yields an imaginary term proportional to ω. The interference also yields persistent spin currents at thermal equilibrium, at E = 0. The contributions from the Dresselhaus and Rashba interactions to the interference oppose each other

Conductivity of a spin-polarized two-dimensional hole gas at very low temperature

Energy Technology Data Exchange (ETDEWEB)

Dlimi, S., E-mail: kaaouachi21@yahoo.fr; Kaaouachi, A. El, E-mail: kaaouachi21@yahoo.fr; Limouny, L., E-mail: kaaouachi21@yahoo.fr; Sybous, A.; Narjis, A.; Errai, M.; Daoudi, E. [Research Group ESNPS , Physics department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla, 80000 Agadir (Morocco); Idrissi, H. El [Faculté des Sciences et Techniques de Mohammedia, Département de physique. BP 146 Quartier Yasmina Mohammedia (Morocco); Zatni, A. [Laboratoire MSTI. Ecole de technologied' Agadir, B.P33/S Agadir (Morocco)

2014-01-27

In the ballistic regime where k{sub B}Tτ / ħ ≥1, the temperature dependence of the metallic conductivity in a two-dimensional hole system of gallium arsenide, is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just before the onset of complete spin polarization, but reappears again in the fully spin-polarized state, being, however, suppressed relative to the zero magnetic field case. The analysis of the degree of suppression can distinguish between screening and interaction-based theories. We show that in a fully polarized spin state, the effects of disorder are dominant and approach a strong localization regime, which is contrary to the behavior of 2D electron systems in a weakly disordered unpolarized state. It was found that the elastic relaxation time correction, depending on the temperature, changed significantly with the degree of spin polarization, to reach a minimum just below the start of the spin-polarized integer, where the conductivity is practically independent of temperature.

Topological honeycomb magnon Hall effect: A calculation of thermal Hall conductivity of magnetic spin excitations

Energy Technology Data Exchange (ETDEWEB)

Owerre, S. A., E-mail: solomon@aims.ac.za [African Institute for Mathematical Sciences, 6 Melrose Road, Muizenberg, Cape Town 7945, South Africa and Perimeter Institute for Theoretical Physics, 31 Caroline St. N., Waterloo, Ontario N2L 2Y5 (Canada)

2016-07-28

Quite recently, the magnon Hall effect of spin excitations has been observed experimentally on the kagome and pyrochlore lattices. The thermal Hall conductivity κ{sup xy} changes sign as a function of magnetic field or temperature on the kagome lattice, and κ{sup xy} changes sign upon reversing the sign of the magnetic field on the pyrochlore lattice. Motivated by these recent exciting experimental observations, we theoretically propose a simple realization of the magnon Hall effect in a two-band model on the honeycomb lattice. The magnon Hall effect of spin excitations arises in the usual way via the breaking of inversion symmetry of the lattice, however, by a next-nearest-neighbour Dzyaloshinsky-Moriya interaction. We find that κ{sup xy} has a fixed sign for all parameter regimes considered. These results are in contrast to the Lieb, kagome, and pyrochlore lattices. We further show that the low-temperature dependence on the magnon Hall conductivity follows a T{sup 2} law, as opposed to the kagome and pyrochlore lattices. These results suggest an experimental procedure to measure thermal Hall conductivity within a class of 2D honeycomb quantum magnets and ultracold atoms trapped in a honeycomb optical lattice.

Spin-dependent optics with metasurfaces

Directory of Open Access Journals (Sweden)

Xiao Shiyi

2016-11-01

Full Text Available Optical spin-Hall effect (OSHE is a spin-dependent transportation phenomenon of light as an analogy to its counterpart in condensed matter physics. Although being predicted and observed for decades, this effect has recently attracted enormous interests due to the development of metamaterials and metasurfaces, which can provide us tailor-made control of the light-matter interaction and spin-orbit interaction. In parallel to the developments of OSHE, metasurface gives us opportunities to manipulate OSHE in achieving a stronger response, a higher efficiency, a higher resolution, or more degrees of freedom in controlling the wave front. Here, we give an overview of the OSHE based on metasurface-enabled geometric phases in different kinds of configurational spaces and their applications on spin-dependent beam steering, focusing, holograms, structured light generation, and detection. These developments mark the beginning of a new era of spin-enabled optics for future optical components.

Spin valve effect in single-atom contacts

International Nuclear Information System (INIS)

Ziegler, M; Neel, N; Berndt, R; Lazo, C; Ferriani, P; Heinze, S; Kroeger, J

2011-01-01

Magnetic single-atom contacts have been controllably fabricated with a scanning tunnelling microscope. A voltage-dependent spin valve effect with conductance variations of ∼40% is reproducibly observed from contacts comprising a Cr-covered tip and Co and Cr atoms on ferromagnetic nanoscale islands on W(110) with opposite magnetization. The spin-dependent conductances are interpreted from first-principles calculations in terms of the orbital character of the relevant electronic states of the junction.

Scaling behavior of the spin pumping effect in conductive ferromagnet/platinum bilayers

Energy Technology Data Exchange (ETDEWEB)

Czeschka, Franz D.; Althammer, Matthias; Huebl, Hans; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Dreher, Lukas; Brandt, Martin S. [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Imort, Inga-Mareen; Reiss, Guenter; Thomas, Andy [Fakultaet fuer Physik, Universitaet Bielefeld (Germany); Schoch, Wladimir; Limmer, Wolfgang [Abteilung Halbleiterphysik, Universitaet Ulm (Germany)

2011-07-01

Spin pumping experiments allow to measure spin currents or the spin Hall angle. We have systematically studied the spin pumping DC voltage occurring in conjunction with ferromagnetic resonance in a series of conductive ferromagnet/platinum bilayers, made from elemental 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors. In all bilayers, we invariably observe the same DC voltage polarity. Moreover, we find that the voltage magnitude scales with the magnetization precession cone angle with a universal prefactor, irrespective of the magnetic properties, the charge carrier transport mechanism, and the charge carrier type in a given ferromagnet. These findings quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect, and establish spin pumping as a generic phenomenon.

Effect of Disorder on the Conductance of Spin Field Effect Transistors (SPINFET)

OpenAIRE

Cahay, M.; Bandyopadhyay, S.

2003-01-01

We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the amplitude and phase of the transistor's conductance oscillations to the location of a single impurity in the channel is reminiscent of the phenomenon of universal conductance fluctuations in mesoscopic samples and is extremely problematic as far as device imple...

Spin-dependent parton distributions in the nucleon

Energy Technology Data Exchange (ETDEWEB)

Cloet, I.C. [Special Research Centre for the Subatomic Structure of Matter and Department of Physics and Mathematical Physics, University of Adelaide, SA 5005 (Australia); Bentz, W. [Department of Physics, School of Science, Tokai University Hiratsuka-shi, Kanagawa 259-1292 (Japan); Thomas, A.W. [Jefferson Lab, 12000 Jefferson Avenue, Newport News, VA 23606 (United States)

2005-04-15

Spin-dependent quark light-cone momentum distributions are calculated for a nucleon in the nuclear medium. We utilize a modified NJL model where the nucleon is described as a composite quark-diquark state. Scalar and vector mean fields are incorporated in the nuclear medium and these fields couple to the confined quarks in the nucleon. The effect of these fields on the spin-dependent distributions and consequently the axial charges is investigated. Our results for the 'spin-dependent EMC effect' are also discussed.

Tunneling Anomalous and Spin Hall Effects.

Science.gov (United States)

Matos-Abiague, A; Fabian, J

2015-07-31

We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

The influence of the spin-dependent phases of tunneling electrons on the conductance of a point ferromagnet/isolator/d-wave superconductor contact.

Science.gov (United States)

Vodopyanov, B P

2010-05-12

The influence of the spin-dependent phase shifts (SDPSs) associated with the electronic reflection and transmission amplitudes acquired by electrons upon scattering at the potential barrier on the Andreev reflection probability of electron and hole excitations for a ferromagnet/isolator/d-wave superconductor (FIS) contact and on the charge conductance of the FIS contact is studied. Various superconductor orientations are considered. It has been found that for strong ferromagnets and ultrathin interface potential for the {110} oriented d-wave superconductor the presence of the SDPS can lead to the appearance of finite-voltage peaks in the charge conductance of the F/I/d-wave superconductor contact. On the contrary, for the {100} orientation of the d-wave superconductor the presence of the SDPS can lead to restoration of the zero-voltage peak and suppression of finite-voltage peaks. The spin-dependent amplitudes of the Andreev reflection probability and energy levels of the spin-dependent Andreev bound states are found.

Solvable model of spin-dependent transport through a finite array of quantum dots

International Nuclear Information System (INIS)

Avdonin, S A; Dmitrieva, L A; Kuperin, Yu A; Sartan, V V

2005-01-01

The problem of spin-dependent transport of electrons through a finite array of quantum dots attached to a 1D quantum wire (spin gun) for various semiconductor materials is studied. The Breit-Fermi term for spin-spin interaction in the effective Hamiltonian of the device is shown to result in a dependence of transmission coefficient on the spin orientation. The difference of transmission probabilities for singlet and triplet channels can reach a few per cent for a single quantum dot. For several quantum dots in the array due to interference effects it can reach approximately 100% for some energy intervals. For the same energy intervals the conductance of the device reaches the value ∼1 in [e 2 /πℎ] units. As a result a model of the spin gun which transforms the spin-unpolarized electron beam into a completely polarized one is suggested

Spin-dependent delay time and Hartman effect in asymmetrical graphene barrier under strain

Science.gov (United States)

Sattari, Farhad; Mirershadi, Soghra

2018-01-01

We study the spin-dependent tunneling time, including group delay and dwell time, in a graphene based asymmetrical barrier with Rashba spin-orbit interaction in the presence of strain, sandwiched between two normal leads. We find that the spin-dependent tunneling time can be efficiently tuned by the barrier width, and the bias voltage. Moreover, for the zigzag direction strain although the oscillation period of the dwell time does not change, the oscillation amplitude increases by increasing the incident electron angle. It is found that for the armchair direction strain unlike the zigzag direction the group delay time at the normal incidence depends on the spin state of electrons and Hartman effect can be observed. In addition, for the armchair direction strain the spin polarization increases with increasing the RSOI strength and the bias voltage. The magnitude and sign of spin polarization can be manipulated by strain. In particular, by applying an external electric field the efficiency of the spin polarization is improved significantly in strained graphene, and a fully spin-polarized current is generated.

Spin-dependent relativistic effect on heavy quarkonium properties in medium

International Nuclear Information System (INIS)

Dong Yubing

1997-01-01

Spin-dependent relativistic effect on the binding and dissociation of the heavy quarkonium in a thermal environment is investigated. The result shows that the interactions could influence the heavy quarkonium properties in medium

Temperature Dependence of the Spin-Hall Conductivity of a Two-Dimensional Impure Rashba Electron Gas in the Presence of Electron-Phonon and Electron-Electron Interactions

Science.gov (United States)

Yavari, H.; Mokhtari, M.; Bayervand, A.

2015-03-01

Based on Kubo's linear response formalism, temperature dependence of the spin-Hall conductivity of a two-dimensional impure (magnetic and nonmagnetic impurities) Rashba electron gas in the presence of electron-electron and electron-phonon interactions is analyzed theoretically. We will show that the temperature dependence of the spin-Hall conductivity is determined by the relaxation rates due to these interactions. At low temperature, the elastic lifetimes ( and are determined by magnetic and nonmagnetic impurity concentrations which are independent of the temperature, while the inelastic lifetimes ( and related to the electron-electron and electron-phonon interactions, decrease when the temperature increases. We will also show that since the spin-Hall conductivity is sensitive to temperature, we can distinguish the intrinsic and extrinsic contributions.

Effect of deformation and orientation on spin orbit density dependent nuclear potential

Science.gov (United States)

Mittal, Rajni; Kumar, Raj; Sharma, Manoj K.

2017-11-01

Role of deformation and orientation is investigated on spin-orbit density dependent part VJ of nuclear potential (VN=VP+VJ) obtained within semi-classical Thomas Fermi approach of Skyrme energy density formalism. Calculations are performed for 24-54Si+30Si reactions, with spherical target 30Si and projectiles 24-54Si having prolate and oblate shapes. The quadrupole deformation β2 is varying within range of 0.023 ≤ β2 ≤0.531 for prolate and -0.242 ≤ β2 ≤ -0.592 for oblate projectiles. The spin-orbit dependent potential gets influenced significantly with inclusion of deformation and orientation effect. The spin-orbit barrier and position gets significantly influenced by both the sign and magnitude of β2-deformation. Si-nuclei with β220. The possible role of spin-orbit potential on barrier characteristics such as barrier height, barrier curvature and on the fusion pocket is also probed. In reference to prolate and oblate systems, the angular dependence of spin-orbit potential is further studied on fusion cross-sections.

Spin-dependent transport through interacting graphene armchair nanoribbons

International Nuclear Information System (INIS)

Koller, Sonja; Mayrhofer, Leonhard; Grifoni, Milena

2010-01-01

We investigate spin effects in transport across fully interacting, finite-size graphene armchair nanoribbons (ACNs) contacted to collinearly spin-polarized leads. In such systems, the presence of short-range Coulomb interaction between bulk states and states localized at the ribbon ends leads to novel spin-dependent phenomena. Specifically, the total spin of the low-energy many-body states is conserved during tunneling but that of the bulk and end states is not. As a consequence, in the single-electron regime, dominated by Coulomb blockade phenomena, we find pronounced negative differential conductance features for ACNs contacted to parallel polarized leads. These features are, however, absent in an anti-parallel contact configuration, which in turn leads, within a certain gate and bias voltage region, to a negative tunneling magneto-resistance. Moreover, we analyze the changes in the transport characteristics under the influence of an external magnetic field.

Spin-dependent Goos–Hänchen shift and spin beam splitter in gate-controllable ferromagnetic graphene

Energy Technology Data Exchange (ETDEWEB)

Wang, Y. [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Liu, Y., E-mail: stslyl@mail.sysu.edu.cn [School of Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Wang, B., E-mail: wangbiao@mail.sysu.edu.cn [School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

2014-03-15

The transmission and Goos–Hänchen (GH) shift for charge carriers in gate-controllable ferromagnetic graphene induced by ferromagnetic insulator are investigated theoretically. Numerical results demonstrate that spin-up and spin-down electrons exhibit remarkably different transmission and GH shifts. The spin-dependent GH shifts directly demonstrate the spin beam splitting effect, which can be controlled by the voltage of gate. We attribute the spin beam splitting effect to the combination of tunneling through potential barrier and Zeeman interaction from the magnetic field and the exchange proximity interaction between the ferromagnetic insulator and graphene. In view of the spin beam splitting effect and the spin-dependent GH shifts, the gate-controllable ferromagnetic graphene might be utilized to design spin beam splitter.

Spin-dependent Goos–Hänchen shift and spin beam splitter in gate-controllable ferromagnetic graphene

International Nuclear Information System (INIS)

Wang, Y.; Liu, Y.; Wang, B.

2014-01-01

The transmission and Goos–Hänchen (GH) shift for charge carriers in gate-controllable ferromagnetic graphene induced by ferromagnetic insulator are investigated theoretically. Numerical results demonstrate that spin-up and spin-down electrons exhibit remarkably different transmission and GH shifts. The spin-dependent GH shifts directly demonstrate the spin beam splitting effect, which can be controlled by the voltage of gate. We attribute the spin beam splitting effect to the combination of tunneling through potential barrier and Zeeman interaction from the magnetic field and the exchange proximity interaction between the ferromagnetic insulator and graphene. In view of the spin beam splitting effect and the spin-dependent GH shifts, the gate-controllable ferromagnetic graphene might be utilized to design spin beam splitter

Longitudinal and spin Hall conductance of a one-dimensional Aharonov-Bohm ring

International Nuclear Information System (INIS)

Moca, Catalin Pascu; Marinescu, D C

2006-01-01

The longitudinal and spin Hall conductances of an electron gas with Rashba-Dresselhaus spin-orbit interaction, confined to a quasi-one-dimensional Aharonov-Bohm ring, are studied as functions of disorder and magnetic flux. The system is mapped onto a one-dimensional virtual lattice and is described, in a tight binding approximation, by a Hamiltonian that depends parametrically on the nearest neighbour hopping integral t, the Rashba spin-orbit coupling V R , the Dresselhaus spin-orbit coupling V D and an Anderson-like, on-site disorder energy strength W. Numerical results are obtained within a spin dependent Landauer-Buettiker formalism

Symmetry-Dependent Spin Transport Properties and Spin-Filter Effects in Zigzag-Edged Germanene Nanoribbons

Directory of Open Access Journals (Sweden)

Can Cao

2015-01-01

Full Text Available We performed the first-principles calculations to investigate the spin-dependent electronic transport properties of zigzag-edged germanium nanoribbons (ZGeNRs. We choose of ZGeNRs with odd and even widths of 5 and 6, and the symmetry-dependent transport properties have been found, although the σ mirror plane is absent in ZGeNRs. Furthermore, even-N and odd-N ZGeNRs have very different current-voltage relationships. We find that the even 6-ZGeNR shows a dual spin-filter effect in antiparallel (AP magnetism configuration, but the odd 5-ZGeNR behaves as conventional conductors with linear current-voltage dependence. It is found that when the two electrodes are in parallel configuration, the 6-ZGeNR system is in a low resistance state, while it can switch to a much higher resistance state when the electrodes are in AP configuration, and the magnetoresistance of 270% can be observed.

The magnetism and spin-dependent electronic transport properties of boron nitride atomic chains

International Nuclear Information System (INIS)

An, Yipeng; Zhang, Mengjun; Wang, Tianxing; Jiao, Zhaoyong; Wu, Dapeng; Fu, Zhaoming; Wang, Kun

2016-01-01

Very recently, boron nitride atomic chains were successively prepared and observed in experiments [O. Cretu et al., ACS Nano 8, 11950 (2015)]. Herein, using a first-principles technique, we study the magnetism and spin-dependent electronic transport properties of three types of BN atomic chains whose magnetic moment is 1 μ B for B n N n−1 , 2 μ B for B n N n , and 3 μ B for B n N n+1 type atomic chains, respectively. The spin-dependent electronic transport results demonstrate that the short B n N n+1 chain presents an obvious spin-filtering effect with high spin polarization ratio (>90%) under low bias voltages. Yet, this spin-filtering effect does not occur for long B n N n+1 chains under high bias voltages and other types of BN atomic chains (B n N n−1 and B n N n ). The proposed short B n N n+1 chain is predicted to be an effective low-bias spin filters. Moreover, the length-conductance relationships of these BN atomic chains were also studied.

Effect of the δ-potential on spin-dependent electron tunneling in double barrier semiconductor heterostructure

Science.gov (United States)

Chandrasekar, L. Bruno; Gnanasekar, K.; Karunakaran, M.

2018-06-01

The effect of δ-potential was studied in GaAs/Ga0.6Al0·4As double barrier heterostructure with Dresselhaus spin-orbit interaction. The role of barrier height and position of the δ- potential in the well region was analysed on spin-dependent electron tunneling using transfer matrix method. The spin-separation between spin-resonances on energy scale depends on both height and position of the δ- potential, whereas the tunneling life time of electrons highly influenced by the position of the δ- potential and not on the height. These results might be helpful for the fabrication of spin-filters.

On the spin-dependent sensitivity of XENON100

Energy Technology Data Exchange (ETDEWEB)

Garny, Mathias [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Ibarra, Alejandro; Pato, Miguel; Vogl, Stefan [Technische Univ. Muenchen, Garching (Germany). Physik-Department

2012-11-15

The latest XENON100 data severely constrains dark matter elastic scattering off nuclei, leading to impressive upper limits on the spin-independent cross-section. The main goal of this paper is to stress that the same data set has also an excellent spin-dependent sensitivity, which is of utmost importance in probing dark matter models. We show in particular that the constraints set by XENON100 on the spin-dependent neutron cross-section are by far the best at present, whereas the corresponding spin-dependent proton limits lag behind other direct detection results. The effect of nuclear uncertainties on the structure functions of xenon isotopes is analysed in detail and found to lessen the robustness of the constraints, especially for spin-dependent proton couplings. Notwith-standing, the spin-dependent neutron prospects for XENON1T and DARWIN are very encouraging. We apply our constraints to well-motivated dark matter models and demonstrate that in both mass-degenerate scenarios and the minimal supersymmetric standard model the spin-dependent neutron limits can actually override the spin-independent limits. This opens the possibility of probing additional unexplored regions of the dark matter parameter space with the next generation of ton-scale direct detection experiments.

On the spin-dependent sensitivity of XENON100

International Nuclear Information System (INIS)

Garny, Mathias; Ibarra, Alejandro; Pato, Miguel; Vogl, Stefan

2012-11-01

The latest XENON100 data severely constrains dark matter elastic scattering off nuclei, leading to impressive upper limits on the spin-independent cross-section. The main goal of this paper is to stress that the same data set has also an excellent spin-dependent sensitivity, which is of utmost importance in probing dark matter models. We show in particular that the constraints set by XENON100 on the spin-dependent neutron cross-section are by far the best at present, whereas the corresponding spin-dependent proton limits lag behind other direct detection results. The effect of nuclear uncertainties on the structure functions of xenon isotopes is analysed in detail and found to lessen the robustness of the constraints, especially for spin-dependent proton couplings. Notwith-standing, the spin-dependent neutron prospects for XENON1T and DARWIN are very encouraging. We apply our constraints to well-motivated dark matter models and demonstrate that in both mass-degenerate scenarios and the minimal supersymmetric standard model the spin-dependent neutron limits can actually override the spin-independent limits. This opens the possibility of probing additional unexplored regions of the dark matter parameter space with the next generation of ton-scale direct detection experiments.

Role of spin mixing conductance in spin pumping: Enhancement of spin pumping efficiency in Ta/Cu/Py structures

Energy Technology Data Exchange (ETDEWEB)

Deorani, Praveen; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore (Singapore)

2013-12-02

From spin pumping measurements in Ta/Py devices for different thicknesses of Ta, we determine the spin Hall angle to be 0.021–0.033 and spin diffusion length to be 8 nm in Ta. We have also studied the effect of changing the properties of non-magnet/ferromagnet interface by adding a Cu interlayer. The experimental results show that the effective spin mixing conductance increases in the presence of Cu interlayer for Ta/Cu/Py devices whereas it decreases in Pt/Cu/Py devices. Our findings allow the tunability of the spin pumping efficiency by adding a thin interlayer at the non-magnet/ferromagnet interface.

Spin-dependent tunnelling at infrared frequencies: magnetorefractive effect in magnetic nanocomposites

International Nuclear Information System (INIS)

Granovsky, A.B.; Inoue, Mitsuteru

2004-01-01

We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling

Spin-dependent tunnelling at infrared frequencies: magnetorefractive effect in magnetic nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Granovsky, A.B. E-mail: granov@magn.ru; Inoue, Mitsuteru

2004-05-01

We present a brief review of recent experimental and theoretical results on magnetorefractive effect in magnetic metal-insulator nanogranular alloys with tunnel-type magnetoresistance focusing on its relation with high-frequency spin-dependent tunnelling.

Spin Hall effect on a noncommutative space

International Nuclear Information System (INIS)

Ma Kai; Dulat, Sayipjamal

2011-01-01

We study the spin-orbital interaction and the spin Hall effect of an electron moving on a noncommutative space under the influence of a vector potential A(vector sign). On a noncommutative space, we find that the commutator between the vector potential A(vector sign) and the electric potential V 1 (r(vector sign)) of the lattice induces a new term, which can be treated as an effective electric field, and the spin Hall conductivity obtains some correction. On a noncommutative space, the spin current and spin Hall conductivity have distinct values in different directions, and depend explicitly on the noncommutative parameter. Once this spin Hall conductivity in different directions can be measured experimentally with a high level of accuracy, the data can then be used to impose bounds on the value of the space noncommutativity parameter. We have also defined a new parameter, σ=ρθ (ρ is the electron concentration, θ is the noncommutativity parameter), which can be measured experimentally. Our approach is based on the Foldy-Wouthuysen transformation, which gives a general Hamiltonian of a nonrelativistic electron moving on a noncommutative space.

Effect of cubic Dresselhaus interaction on the longitudinal optical conductivity of a spin-orbit coupled system

Science.gov (United States)

Cruz, Elmer; López-Bastidas, Catalina; Maytorena, Jesús A.

2018-03-01

We investigate the effect of the oft-neglected cubic terms of the Dresselhaus spin-orbit coupling on the longitudinal current response of a two-dimensional electron gas with both Rashba and linear Dresselhaus interactions. For a quantum well grown in the [001] direction, the changes caused by these nonlinear-in-momentum terms on the absorption spectrum become more notable under SU(2) symmetry conditions, when the Rashba and linear Dresselhaus coupling strengths are tuned to be equal. The longitudinal optical response no longer vanishes then and shows a strong dependence on the direction of the externally applied electric field, giving a signature of the relative size of several spin-orbit contributions. This anisotropic response arises from the nonisotropic splitting of the spin states induced by the interplay of Rashba and Dresselhaus couplings. However, the presence of cubic terms introduces characteristic spectral features and can modify the overall shape of the spectra for some values of the relative sizes of the spin-orbit parameters. We compare this behavior to the case of a sample with [110] crystal orientation which, under conditions of spin-preserving symmetry, has a collinear spin-orbit vector field that leads to vanishing conductivity, even in the presence of cubic terms. In addition to the control through the driven frequency or electrical gating, such a directional aspect of the current response suggests new ways of manipulation and supports the use of interband optics as a sensitive probe of spin-orbit mechanisms in semiconductor spintronics.

Spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor junctions

International Nuclear Information System (INIS)

Li Hong; Yang Wei; Yang Xinjian; Qin Minghui; Xu Yihong

2007-01-01

Taking into account the thickness of the ferromagnetic insulator (FI), the spin-filtering effect and proximity effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions are studied based on an extended Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the sub-energy gap conductance peaks and the spin polarization in the ferromagnetic insulator causes an imbalance of the peak heights. Different from the ferromagnet the spin-filtering effect of the FI cannot cause the reversion of the normalized conductance in NM/FI/NM/SC junctions

High-frequency spin-dependent tunnelling in magnetic nanocomposites: Magnetorefractive effect and magnetoimpedance

Energy Technology Data Exchange (ETDEWEB)

Granovsky, Alexander [Faculty of Physics, Lomonosov Moscow State University, Moscow 119992 (Russian Federation)]. E-mail: granov@magn.ru; Kozlov, Andrey [Faculty of Physics, Lomonosov Moscow State University, Moscow 119992 (Russian Federation); Nedukh, Sergey [Institute of Radiophysics and Electronics NAS of Ukraine, Kharkov 61085 (Ukraine); Tarapov, Sergey [Institute of Radiophysics and Electronics NAS of Ukraine, Kharkov 61085 (Ukraine)

2005-07-15

Since the dielectric permittivity is linear with frequency-dependent conductivity, high-frequency properties for any kind of magnetic materials with the high magnetoresistance depend on magnetization. It manifests as magnetorefractive effect (MRE) in the infrared region of spectrum and as magnetoimpedance (MI) in the frequency range between radio and microwaves. The main mechanism of both MRE and MI in nanocomposites with tunnel-type magnetoresistance is high-frequency spin-dependent tunnelling. We report on recent results of theoretical and experimental investigations of MRE and MI in nanocomposites Co{sub 51.5}Al{sub 19.5}O{sub 29}, Co{sub 50.2}Ti{sub 9.1}O{sub 40.7}, Co{sub 52.3}Si{sub 12.2}O{sub 35.5} and (Co{sub 0,4}Fe{sub 0,6}){sub 48}(MgF){sub 52}. Most of the obtained experimental data for MRE and MI are consistent with the theory based on considering the tunnel junction between adjacent granules in percolation cluster as a capacitor.

Effect of spin rotation coupling on spin transport

International Nuclear Information System (INIS)

Chowdhury, Debashree; Basu, B.

2013-01-01

We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k → ⋅p → perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k → ⋅p → framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied

Effect of spin rotation coupling on spin transport

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Debashree, E-mail: debashreephys@gmail.com; Basu, B., E-mail: sribbasu@gmail.com

2013-12-15

We have studied the spin rotation coupling (SRC) as an ingredient to explain different spin-related issues. This special kind of coupling can play the role of a Dresselhaus like coupling in certain conditions. Consequently, one can control the spin splitting, induced by the Dresselhaus like term, which is unusual in a semiconductor heterostructure. Within this framework, we also study the renormalization of the spin-dependent electric field and spin current due to the k{sup →}⋅p{sup →} perturbation, by taking into account the interband mixing in the rotating system. In this paper we predict the enhancement of the spin-dependent electric field resulting from the renormalized spin rotation coupling. The renormalization factor of the spin electric field is different from that of the SRC or Zeeman coupling. The effect of renormalized SRC on spin current and Berry curvature is also studied. Interestingly, in the presence of this SRC-induced SOC it is possible to describe spin splitting as well as spin galvanic effect in semiconductors. -- Highlights: •Studied effect of spin rotation coupling on the spin electric field, spin current and Berry curvature. •In the k{sup →}⋅p{sup →} framework we study the renormalization of spin electric field and spin current. •For an inertial system we have discussed the spin splitting. •Expression for the Berry phase in the inertial system is discussed. •The inertial spin galvanic effect is studied.

Spin- and valley-dependent electrical conductivity of ferromagnetic group-IV 2D sheets in the topological insulator phase

Science.gov (United States)

Hoi, Bui Dinh; Yarmohammadi, Mohsen; Mirabbaszadeh, Kavoos; Habibiyan, Hamidreza

2018-03-01

In this work, based on the Kubo-Greenwood formalism and the k . p Hamiltonian model, the impact of Rashba spin-orbit coupling on electronic band structure and electrical conductivity of spin-up and spin-down subbands in counterparts of graphene, including silicene, stanene, and germanene nanosheets has been studied. When Rashba coupling is considered, the effective mass of Dirac fermions decreases significantly and no significant change is caused by this coupling for the subband gaps. All these nanosheets are found to be in topological insulator quantum phase at low staggered on-site potentials due to the applied perpendicular external electric field. We point out that the electrical conductivity of germanene increases gradually with Rashab coupling, while silicene and stanene have some fluctuations due to their smaller Fermi velocity. Furthermore, some critical temperatures with the same electrical conductivity values for jumping to the higher energy levels are observed at various Rashba coupling strengths. For all structures, a broad peak appears at low temperatures in electrical conductivity curves corresponding to the large entropy of systems when the thermal energy reaches to the difference between the energy states. Finally, we have reported that silicene has the larger has the larger electrical conductivity than two others.

Spin-dependent transport in ferromagnet/semiconductor/ferromagnet junctions: a fully relativistic approach

International Nuclear Information System (INIS)

Popescu, Voicu; Ebert, Hubert; Papanikolaou, Nikolaos; Zeller, Rudolf; Dederichs, Peter H

2004-01-01

We present a fully relativistic generalization of the Landauer-Buettiker formalism that has been implemented within the framework of the spin-polarized relativistic screened Korringa-Kohn-Rostoker Green function method. This approach, going beyond the two-current model, supplies a more general description of the electronic transport. It is shown that the relativistic conductance can be split in terms of individual spin-diagonal and spin-off-diagonal (spin-flip) components, which allows a detailed analysis of the influence of spin-orbit-coupling-induced spin-flip processes on the spin-dependent transport. We apply our method to calculate the ballistic conductance in Fe/GaAs/Fe magnetic tunnel junctions. We find that, by removing the spin selection rules, the spin-orbit coupling strongly influences the conductance, not only qualitatively but also quantitatively, especially in the anti-parallel alignment of the magnetization in the two Fe leads

Lateral spin-orbit coupling and the Kondo effect in quantum dots

Science.gov (United States)

Vernek, Edson; Ngo, Anh; Ulloa, Sergio

2010-03-01

We present studies of the Coulomb blockade and Kondo regimes of transport of a quantum dot connected to current leads through spin-polarizing quantum point contacts (QPCs) [1]. This configuration, arising from the effect of lateral spin-orbit fields, results in spin-polarized currents even in the absence of external magnetic fields and greatly affects the correlations in the dot. Using an equation-of-motion technique and numerical renormalization group calculations we obtain the conductance and spin polarization for this system under different parameter regimes. Our results show that both the Coulomb blockade and Kondo regimes exhibit non-zero spin-polarized conductance. We analyze the role that the spin-dependent tunneling amplitudes of the QPC play in determining the charge and net magnetic moment in the dot. We find that the Kondo regime exhibits a strongly dependent Kondo temperature on the QPC polarizability. These effects, controllable by lateral gate voltages, may provide a new approach for exploring Kondo correlations, as well as possible spin devices. Supported by NSF DMR-MWN and PIRE. [1] P. Debray et al., Nature Nanotech. 4, 759 (2009).

Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence

KAUST Repository

Manchon, Aurelien; Zhang, S.; Lee, K.-J.

2010-01-01

The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.

Signatures of asymmetric and inelastic tunneling on the spin torque bias dependence

KAUST Repository

Manchon, Aurelien

2010-11-15

The influence of structural asymmetries (barrier height and exchange splitting), as well as inelastic scattering (magnons and phonons) on the bias dependence of the spin transfer torque in a magnetic tunnel junction is studied theoretically using the free-electron model. We show that they modify the “conventional” bias dependence of the spin transfer torque, together with the bias dependence of the conductance. In particular, both structural asymmetries and bulk (inelastic) scattering add antisymmetric terms to the perpendicular torque (∝V and ∝je|V|) while the interfacial inelastic scattering conserves the junction symmetry and only produces symmetric terms (∝|V|n, n∊N). The analysis of spin torque and conductance measurements displays a signature revealing the origin (asymmetry or inelastic scattering) of the discrepancy.

Thermal conductivity of magnetic insulators with strong spin-orbit coupling

Science.gov (United States)

Stamokostas, Georgios; Lapas, Panteleimon; Fiete, Gregory A.

We study the influence of spin-orbit coupling on the thermal conductivity of various types of magnetic insulators. In the absence of spin-orbit coupling and orbital-degeneracy, the strong-coupling limit of Hubbard interactions at half filling can often be adequately described in terms of a pure spin Hamiltonian of the Heisenberg form. However, in the presence of spin-orbit coupling the resulting exchange interaction can become highly anisotropic. The effect of the atomic spin-orbit coupling, taken into account through the effect of magnon-phonon interactions and the magnetic order and excitations, on the lattice thermal conductivity of various insulating magnetic systems is studied. We focus on the regime of low temperatures where the dominant source of scattering is two-magnon scattering to one-phonon processes. The thermal current is calculated within the Boltzmann transport theory. We are grateful for financial support from NSF Grant DMR-0955778.

Spin Hall conductance in a Y-shaped junction device in presence of tunable spin-orbit coupling

Science.gov (United States)

Ganguly, Sudin; Basu, Saurabh

2017-06-01

We study spin Hall effect in a three terminal Y-shaped device in presence of tunable spin-orbit (SO) interactions via Landauer-Büttiker formalism. We have evolved a fabrication technique for creating different angular separation between the two arms of the Y-shaped device so as to investigate the effect of angular width on the spin Hall conductance (SHC). A smaller angular separation yields a larger conductance. Also arbitrary orientation of the spin quantization axes yields interesting three dimensional contour maps for the SHC corresponding to different angular separation of the Y-shaped device. In addition to the GSH demonstrating bounded behaviour for different angular separations, there are distinct symmetry axes about which SHC demonstrates reflection symmetry. The results explicitly show breaking of the spin rotational symmetry. Further a systematic study is carried out to compare and contrast between the different SO terms, such as Rashba and Dresselhaus SO interactions and the interplay of the angular separation therein.

Photon energy dependence of photo-induced inverse spin-Hall effect in Pt/GaAs and Pt/Ge

Energy Technology Data Exchange (ETDEWEB)

Isella, Giovanni, E-mail: giovanni.isella@polimi.it; Bottegoni, Federico; Ferrari, Alberto; Finazzi, Marco; Ciccacci, Franco [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

2015-06-08

We report the photon energy dependence of photo-induced inverse spin Hall effect (ISHE) in Pt/GaAs and Pt/Ge Schottky junctions. The experimental results are compared with a spin drift-diffusion model, which highlights the role played by the different spin lifetime in the two semiconductors, in determining the energy dependence of the ISHE signal detected in the Pt layer. The good qualitative agreement between experiments and modelling indicates that photo-induced ISHE can be used as a tool to characterize spin lifetime in semiconductors.

Doping dependent tunneling conductance in SDW ordered copper oxide superconductors

International Nuclear Information System (INIS)

Rout, G.C.; Panda, S.K.

2011-01-01

The model calculation reports the co-existences of s-wave superconductivity and spin density wave (SDW) in high-T c cuprates. The doping dependence of the phase diagram explains the experimental observations qualitatively. The calculated tunneling spectra explains the observed multiple peak structures. This calculation provides an alternative to BCS formalism to calculate order parameters from the spectra. It is observed that doping suppresses the long range anti-ferromagnetic order and induces superconducting phase for a suitable doping. In order to study this effect, we present a model study of the doping dependence of the tunneling conductance in high-T c systems. The system is described by the Hamiltonian consisting of spin density wave (SDW) and s-wave type superconducting interaction in presence of varying impurity concentrations. The gap equations are calculated by using Green's functions technique of Zubarev. The gap equations and the chemical potential are solved self-consistently. The imaginary part of the electron Green's functions shows the quasi-particle density of states which represent the tunneling conductance observed by the scanning tunneling microscopy (STM). We investigate the effect of impurity on the gap equations as well as on the tunneling conductance. The results will be discussed based on the experimental observations.

Doping dependent tunneling conductance in SDW ordered copper oxide superconductors

Energy Technology Data Exchange (ETDEWEB)

Rout, G.C., E-mail: gcr@iopb.res.in [Condensed Matter Physics Group, Dept. of Applied Physics and Ballistics, F.M. University, 756 019 Balasore, Orissa (India); Panda, S K [K.D. Science College, Pochilima, Hinjilicut, 761 101 Ganjam, Orissa (India)

2011-07-15

The model calculation reports the co-existences of s-wave superconductivity and spin density wave (SDW) in high-T{sub c} cuprates. The doping dependence of the phase diagram explains the experimental observations qualitatively. The calculated tunneling spectra explains the observed multiple peak structures. This calculation provides an alternative to BCS formalism to calculate order parameters from the spectra. It is observed that doping suppresses the long range anti-ferromagnetic order and induces superconducting phase for a suitable doping. In order to study this effect, we present a model study of the doping dependence of the tunneling conductance in high-T{sub c} systems. The system is described by the Hamiltonian consisting of spin density wave (SDW) and s-wave type superconducting interaction in presence of varying impurity concentrations. The gap equations are calculated by using Green's functions technique of Zubarev. The gap equations and the chemical potential are solved self-consistently. The imaginary part of the electron Green's functions shows the quasi-particle density of states which represent the tunneling conductance observed by the scanning tunneling microscopy (STM). We investigate the effect of impurity on the gap equations as well as on the tunneling conductance. The results will be discussed based on the experimental observations.

Doping dependent tunneling conductance in SDW ordered copper oxide superconductors

Energy Technology Data Exchange (ETDEWEB)

Rout, G.C., E-mail: gcr@iopb.res.in [Condensed Matter Physics Group, Dept. of Applied Physics and Ballistics, F.M. University, 756 019 Balasore, Orissa (India); Panda, S.K. [K.D. Science College, Pochilima, Hinjilicut, 761 101 Ganjam, Orissa (India)

2011-07-15

The model calculation reports the co-existences of s-wave superconductivity and spin density wave (SDW) in high-T{sub c} cuprates. The doping dependence of the phase diagram explains the experimental observations qualitatively. The calculated tunneling spectra explains the observed multiple peak structures. This calculation provides an alternative to BCS formalism to calculate order parameters from the spectra. It is observed that doping suppresses the long range anti-ferromagnetic order and induces superconducting phase for a suitable doping. In order to study this effect, we present a model study of the doping dependence of the tunneling conductance in high-T{sub c} systems. The system is described by the Hamiltonian consisting of spin density wave (SDW) and s-wave type superconducting interaction in presence of varying impurity concentrations. The gap equations are calculated by using Green's functions technique of Zubarev. The gap equations and the chemical potential are solved self-consistently. The imaginary part of the electron Green's functions shows the quasi-particle density of states which represent the tunneling conductance observed by the scanning tunneling microscopy (STM). We investigate the effect of impurity on the gap equations as well as on the tunneling conductance. The results will be discussed based on the experimental observations.

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

Energy Technology Data Exchange (ETDEWEB)

Kanaki, Toshiki, E-mail: kanaki@cryst.t.u-tokyo.ac.jp; Asahara, Hirokatsu; Ohya, Shinobu, E-mail: ohya@cryst.t.u-tokyo.ac.jp; Tanaka, Masaaki, E-mail: masaaki@ee.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2015-12-14

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

International Nuclear Information System (INIS)

Kanaki, Toshiki; Asahara, Hirokatsu; Ohya, Shinobu; Tanaka, Masaaki

2015-01-01

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I DS by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I DS by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale

Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

Science.gov (United States)

Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

2011-03-01

We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

Electromagnetic pulse-driven spin-dependent currents in semiconductor quantum rings.

Science.gov (United States)

Zhu, Zhen-Gang; Berakdar, Jamal

2009-04-08

We investigate the non-equilibrium charge and spin-dependent currents in a quantum ring with a Rashba spin-orbit interaction (SOI) driven by two asymmetric picosecond electromagnetic pulses. The equilibrium persistent charge and persistent spin-dependent currents are investigated as well. It is shown that the dynamical charge and the dynamical spin-dependent currents vary smoothly with a static external magnetic flux and the SOI provides a SU(2) effective flux that changes the phases of the dynamic charge and the dynamic spin-dependent currents. The period of the oscillation of the total charge current with the delay time between the pulses is larger in a quantum ring with a larger radius. The parameters of the pulse fields control to a certain extent the total charge and the total spin-dependent currents. The calculations are applicable to nanometre rings fabricated in heterojunctions of III-V and II-VI semiconductors containing several hundreds of electrons.

Impact of Disorder on Spin Dependent Transport Phenomena

KAUST Repository

Saidaoui, Hamed

2016-07-03

The impact of the spin degree of freedom on the transport properties of electrons traveling through magnetic materials has been known since the pioneer work of Mott [1]. Since then it has been demonstrated that the spin angular momentum plays a key role in the scattering process of electrons in magnetic multilayers. This role has been emphasized by the discovery of the Giant Magnetoresistance in 1988 by Fert and Grunberg [2, 3]. Among the numerous applications and effects that emerged in mesoscopic devices two mechanisms have attracted our attention during the course of this thesis: the spin transfer torque and the spin Hall effects. The former consists in the transfer of the spin angular momentum from itinerant carriers to local magnetic moments [4]. This mechanism results in the current-driven magnetization switching and excitations, which has potential application in terms of magnetic data storage and non-volatile memories. The latter, spin Hall effect, is considered as well to be one of the most fascinating mechanisms in condensed matter physics due to its ability of generating non-equilibrium spin currents without the need for any magnetic materials. In fact the spin Hall effect relies only on the presence of the spin-orbit interaction in order to create an imbalance between the majority and minority spins. The objective of this thesis is to investigate the impact of disorder on spin dependent transport phenomena. To do so, we identified three classes of systems on which such disorder may have a dramatic influence: (i) antiferromagnetic materials, (ii) impurity-driven spin-orbit coupled systems and (iii) two dimensional semiconducting electron gases with Rashba spin-orbit coupling. Antiferromagnetic materials - We showed that in antiferromagnetic spin-valves, spin transfer torque is highly sensitive to disorder, which prevents its experimental observation. To solve this issue, we proposed to use either a tunnel barrier as a spacer or a local spin torque using

Generalized spin-dependent WIMP-nucleus interactions and the DAMA modulation effect

Energy Technology Data Exchange (ETDEWEB)

Scopel, Stefano; Yoon, Kook-Hyun; Yoon, Jong-Hyun, E-mail: scopel@sogang.ac.kr, E-mail: koreasds@naver.com, E-mail: pledge200@gmail.com [Department of Physics, Sogang University, Seoul (Korea, Republic of)

2015-07-01

Guided by non-relativistic Effective Field Theory (EFT) we classify the most general spin-dependent interactions between a fermionic Weakly Interacting Massive Particle (WIMP) and nuclei, and within this class of models we discuss the viability of an interpretation of the DAMA modulation result in terms of a signal from WIMP elastic scatterings using a halo-independent approach. We find that, although several relativistic EFT's can lead to a spin-dependent cross section, in some cases with an explicit, non-negligible dependence on the WIMP incoming velocity, three main scenarios can be singled out in the non-relativistic limit which approximately encompass them all, and that only differ by their dependence on the transferred momentum. For two of them compatibility between DAMA and other constraints is possible for a WIMP mass below 30 GeV, but only for a WIMP velocity distribution in the halo of our Galaxy which departs from a Maxwellian. This is achieved by combining a suppression of the WIMP effective coupling to neutrons (to evade constraints from xenon and germanium detectors) to an explicit quadratic or quartic dependence of the cross section on the transferred momentum (that leads to a relative enhancement of the expected rate off sodium in DAMA compared to that off fluorine in droplet detectors and bubble chambers). For larger WIMP masses the same scenarios are excluded by scatterings off iodine in COUPP.

Valley- and spin-switch effects in molybdenum disulfide superconducting spin valve

Science.gov (United States)

Majidi, Leyla; Asgari, Reza

2014-10-01

We propose a hole-doped molybdenum disulfide (MoS2) superconducting spin valve (F/S/F) hybrid structure in which the Andreev reflection process is suppressed for all incoming waves with a determined range of the chemical potential in ferromagnetic (F) region and the cross-conductance in the right F region depends crucially on the configuration of magnetizations in the two F regions. Using the scattering formalism, we find that the transport is mediated purely by elastic electron cotunneling (CT) process in a parallel configuration and changes to the pure crossed Andreev reflection (CAR) process in the low-energy regime, without fixing of a unique parameter, by reversing the direction of magnetization in the right F region. This suggests both valley- and spin-switch effects between the perfect elastic CT and perfect CAR processes and makes the nonlocal charge current to be fully valley- and spin-polarized inside the right F region where the type of the polarizations can be changed by reversing the magnetization direction in the right F region. We further demonstrate that the presence of the strong spin-orbit interaction λ and an additional topological term (β ) in the Hamiltonian of MoS2 result in an enhancement of the charge conductance of the CT and CAR processes and make them to be present for long lengths of the superconducting region. Besides, we find that the thermal conductance of the structure with a small length of the highly doped superconducting region exhibits linear dependence on the temperature at low temperatures, whereas it enhances exponentially at higher temperatures. In particular, we demonstrate that the thermal conductance versus the strength of the exchange field (h ) in F region displays a maximum value at h <λ , which moves towards larger exchange fields by increasing the temperature.

Spin force and the generation of sustained spin current in time-dependent Rashba and Dresselhaus systems

International Nuclear Information System (INIS)

Ho, Cong Son; Tan, Seng Ghee; Jalil, Mansoor B. A.

2014-01-01

The generation of spin current and spin polarization in a two-dimensional electron gas structure is studied in the presence of Dresselhaus and Rashba spin-orbit couplings (SOC), the strength of the latter being modulated in time by an ac gate voltage. By means of the non-Abelian gauge field approach, we established the relation between the Lorentz spin force and the spin current in the SOC system, and showed that the longitudinal component of the spin force induces a transverse spin current. For a constant (time-invariant) Rashba system, we recover the universal spin Hall conductivity of e/(8π) , derived previously via the Berry phase and semi-classical methods. In the case of a time-dependent SOC system, the spin current is sustained even under strong impurity scattering. We evaluated the ac spin current generated by a time-modulated Rashba SOC in the absence of any dc electric field. The magnitude of the spin current reaches a maximum when the modulation frequency matches the Larmor frequency of the electrons

Spin-dependent transport and current-induced spin transfer torque in a disordered zigzag silicene nanoribbon

International Nuclear Information System (INIS)

Zhou, Benliang; Zhou, Benhu; Liu, Guang; Guo, Dan; Zhou, Guanghui

2016-01-01

We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.

Spin-dependent transport and current-induced spin transfer torque in a disordered zigzag silicene nanoribbon

Energy Technology Data Exchange (ETDEWEB)

Zhou, Benliang [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Benhu [Department of Physics, Shaoyang University, Shaoyang 422001 (China); Liu, Guang; Guo, Dan [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China); Zhou, Guanghui, E-mail: ghzhou@hunnu.edu.cn [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081 (China)

2016-11-01

We study theoretically the spin-dependent transport and the current-induced spin transfer torque (STT) for a zigzag silicene nanoribbon (ZSiNR) with Anderson-type disorders between two ferromagnetic electrodes. By using the nonequilibrium Green's function method, it is predicted that the transport property and STT through the junction depend sensitively on the disorder, especially around the Dirac point. As a result, the conductance decreases and increases for two electrode in parallel and antiparallel configurations, respectively. Due to the disorder, the magnetoresistance (MR) decreases accordingly even within the energy regime for the perfect plateau without disorders. In addition, the conductance versus the relative angle of the magnetization shows a cosine-like behavior. The STT per unit of the bias voltage versus the angle of the magnetization exhibits a sine-like behavior, and versus the Fermi energy is antisymmetrical to the Dirac point and exhibits sharp peaks. Furthermore, the peaks of the STT are suppressed much as the disorder strength increases, especially around the Dirac point. The results obtained here may provide a valuable suggestion to experimentally design spin valve devices based on ZSiNR.

Spin Hall effect in a 2DEG in the presence of magnetic couplings

International Nuclear Information System (INIS)

Gorini, C; Schwab, P; Dzierzawa, M; Raimondi, R; Milletari, M

2009-01-01

It is now well established that the peculiar linear-in-momentum dependence of the Rashba (and of the Dresselhaus) spin-orbit coupling leads to the vanishing of the spin Hall conductivity in the bulk of a two-dimensional electron gas (2DEG). In this paper we discuss how generic magnetic couplings change this behaviour providing then a potential handle on the spin Hall effect. In particular we examine the influence of magnetic impurities and an in-plane magnetic field. We find that in both cases there is a finite spin Hall effect and we provide explicit expressions for the spin Hall conductivity. The results can be obtained by means of the quasiclassical Green function approach, that we have recently extended to spin-orbit coupled electron systems.

Dynamical spin accumulation in large-spin magnetic molecules

Science.gov (United States)

Płomińska, Anna; Weymann, Ireneusz; Misiorny, Maciej

2018-01-01

The frequency-dependent transport through a nanodevice containing a large-spin magnetic molecule is studied theoretically in the Kondo regime. Specifically, the effect of magnetic anisotropy on dynamical spin accumulation is of primary interest. Such accumulation arises due to finite components of frequency-dependent conductance that are off diagonal in spin. Here, employing the Kubo formalism and the numerical renormalization group method, we demonstrate that the dynamical transport properties strongly depend on the relative orientation of spin moments in electrodes of the device, as well as on intrinsic parameters of the molecule. In particular, the effect of dynamical spin accumulation is found to be greatly affected by the type of magnetic anisotropy exhibited by the molecule, and it develops for frequencies corresponding to the Kondo temperature. For the parallel magnetic configuration of the device, the presence of dynamical spin accumulation is conditioned by the interplay of ferromagnetic-lead-induced exchange field and the Kondo correlations.

Effects of Coulomb repulsion on conductivity of heterojunction carbon nanotube quantum dots with spin-orbital coupling and interacting leads

Energy Technology Data Exchange (ETDEWEB)

Ogloblya, O.V., E-mail: olexandr.ogloblya@gmail.com [Taras Shevchenko National University, 64/13 Volodymyrska St., Kyiv 01601 (Ukraine); Kuznietsova, H.M. [Taras Shevchenko National University, 64/13 Volodymyrska St., Kyiv 01601 (Ukraine); Strzhemechny, Y.M. [Dept. of Physics and Astronomy, Texas Christian University, Fort Worth, TX 76129 (United States)

2017-01-01

We performed numerical studies for the conductance of a heterojunction carbon nanotube quantum dot (QD) with an extra spin orbital quantum number and a conventional QD in which the electron state is determined only by the spin quantum number. Our computational approach took into account the spin-orbit interaction and the Coulomb repulsion both between electrons on a QD as well as between the QD electron and the contacts. We utilized an approach based on the Keldysh non-equilibrium Green's function formalism as well as the equation of motion technique. We focused on the case of a finite Coulombic on-site repulsion and considered two possible cases of applied voltage: spin bias and conventional bias. For the system of interest we obtained bias spectroscopy diagrams, i.e. contour charts showing dependence of conductivity on two variables - voltage and the energy level position in a QD - which can be controlled by the plunger gate voltage. The finite Coulombic repulsion splits the density of states into two distinct maxima with the energy separation between them controlled by that parameter. It was also shown that an increase of either the value of the on-site Coulomb repulsion in a QD or the parameter of the Coulomb repulsion between the electrons in the QD and the contacts leads to an overall shift of the density of electronic states dependence toward higher energy values. Presence of the QD-lead interaction yields formation of a new pair of peaks in the differential conductance dependence. We also show that existence of four quantum states in a QD leads to abrupt changes in the density of states. These results could be beneficial for potential applications in nanotube-based amperometric sensors.

Spin-dependent Seebeck coefficients of Ni80Fe20 and Co in nanopillar spin valves

NARCIS (Netherlands)

Dejene, F. K.; Flipse, J.; van Wees, B. J.

2012-01-01

We have experimentally determined the spin-dependent Seebeck coefficient of permalloy (Ni80Fe20) and cobalt (Co) using nanopillar spin valve devices, a stack of two ferromagnetic layers separated by a nonmagnetic layer. The devices were specifically designed to separate heat-related effects from

Electric field dependence of the spin relaxation anisotropy in (111) GaAs/AlGaAs quantum wells

International Nuclear Information System (INIS)

Balocchi, A; Amand, T; Renucci, P; Duong, Q H; Marie, X; Wang, G; Liu, B L

2013-01-01

Time-resolved optical spectroscopy experiments in (111)-oriented GaAs/AlGaAs quantum wells (QWs) show a strong electric field dependence of the conduction electron spin relaxation anisotropy. This results from the interplay between the Dresselhaus and Rashba spin splitting in this system with C 3v symmetry. By varying the electric field applied perpendicular to the QW plane from 20 to 50 kV cm −1 the anisotropy of the spin relaxation time parallel (τ s ∥ ) and perpendicular (τ s ⊥ ) to the growth axis can be first canceled and eventually inversed with respect to the one usually observed in III–V zinc-blende QW (τ s ⊥ = 2τ s ∥ ). This dependence stems from the nonlinear contributions of the k-dependent conduction band spin splitting terms which begin to play the dominant spin relaxing role while the linear Dresselhaus terms are compensated by the Rashba ones through the applied bias. A spin density matrix model for the conduction band spin splitting including both linear and cubic terms of the Dresselhaus Hamiltonian is used which allows a quantitative description of the measured electric field dependence of the spin relaxation anisotropy. The existence of an isotropic point where the spin relaxation tensor reduces to a scalar is predicted and confirmed experimentally. The spin splitting compensation electric field and collision processes type in the QW can be likewise directly extracted from the model without complementary measurements. (paper)

Conductance of two-dimensional waveguide in presence of the Rashba spin-orbit interaction

Science.gov (United States)

Liu, Duan-Yang; Xia, Jian-Bai

2018-04-01

By using the transfer matrix method, we investigated spin transport in some straight structures in presence of the Rashba spin-orbit interaction. It is proved that the interference of two spin states is the same as that in one-dimensional Datta-Das spin field-effect transistor. The conductance of these structures has been calculated. Conductance quantization is common in these waveguides when we change the Fermi energy and the width of the waveguide. Using a periodic system of quadrate stubs and changing the Fermi energy, a nearly square-wave conductance can be obtained in some regions of the Fermi energy.

Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field

International Nuclear Information System (INIS)

Miah, M. Idrish

2008-01-01

The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (V AH ) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of V AH on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that V AH depends on the doping density. The results are discussed

Magnetic field dependence of the current flowing in the spin-coated chlorophyll thin films

Science.gov (United States)

Aji, J. R. P.; Kusumandari; Purnama, B.

2018-03-01

The magnetic dependence of the current flowing in the spin coated chlorophyll films on a patterned Cu PCB substrate has been presented. Chlorophyll was isolated from Spirulina sp and deposited by spin coated methods. The reducing of current by the change of magnetic field (magneto conductance effect) was performed by inducing the magnetic field parallel to the inplane of film at room temp. The magnetoconductance ratio decreases as the increase of voltage. It was indicated that the origin of carrier charge in chlorophyll films should be different with the carrier charge injection (electron).

Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-10-15

The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (V{sub AH}) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of V{sub AH} on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that V{sub AH} depends on the doping density. The results are discussed.

Spin-dependent scattering by a potential barrier on a nanotube

International Nuclear Information System (INIS)

Abranyos, Yonatan; Gumbs, Godfrey; Fekete, Paula

2010-01-01

The electron spin effects on the surface of a nanotube have been considered through the spin-orbit interaction (SOI), arising from the electron confinement on the surface of the nanotube. This is of the same nature as the Rashba-Bychkov SOI at a semiconductor heterojunction. We estimate the effect of disorder within a potential barrier on the transmission probability. Using a continuum model, we obtain analytic expressions for the spin-split energy bands for electrons on the surface of nanotubes in the presence of SOI. First we calculate analytically the amplitudes of scattering from a potential barrier located around the axis of the nanotube into spin-dependent states. The effect of disorder on the scattering process is included phenomenologically and induces a reduction in the transition probability. We analyze the relative role of SOI and disorder in the transmission probability which depends on the angular and linear momentum of the incoming particle, and its spin orientation. Finally we demonstrate that in the presence of disorder, perfect transmission may not be achieved for finite barrier heights.

Observation of the spin Nernst effect

Science.gov (United States)

Meyer, S.; Chen, Y.-T.; Wimmer, S.; Althammer, M.; Wimmer, T.; Schlitz, R.; Geprägs, S.; Huebl, H.; Ködderitzsch, D.; Ebert, H.; Bauer, G. E. W.; Gross, R.; Goennenwein, S. T. B.

2017-10-01

The observation of the spin Hall effect triggered intense research on pure spin current transport. With the spin Hall effect, the spin Seebeck effect and the spin Peltier effect already observed, our picture of pure spin current transport is almost complete. The only missing piece is the spin Nernst (-Ettingshausen) effect, which so far has been discussed only on theoretical grounds. Here, we report the observation of the spin Nernst effect. By applying a longitudinal temperature gradient, we generate a pure transverse spin current in a Pt thin film. For readout, we exploit the magnetization-orientation-dependent spin transfer to an adjacent yttrium iron garnet layer, converting the spin Nernst current in Pt into a controlled change of the longitudinal and transverse thermopower voltage. Our experiments show that the spin Nernst and the spin Hall effect in Pt are of comparable magnitude, but differ in sign, as corroborated by first-principles calculations.

Photo-induced spin and valley-dependent Seebeck effect in the low-buckled Dirac materials

Science.gov (United States)

Mohammadi, Yawar

2018-04-01

Employing the Landauer-Buttiker formula we investigate the spin and valley dependence of Seebeck effect in low-buckled Dirac materials (LBDMs), whose band structure are modulated by local application of a gate voltage and off-resonant circularly polarized light. We calculate the charge, spin and valley Seebeck coefficients of an irradiated LBDM as functions of electronic doping, light intensity and the amount of the electric field in the linear regime. Our calculation reveal that all Seebeck coefficients always shows an odd features with respect to the chemical potential. Moreover, we show that, due to the strong spin-orbit coupling in the LBDMs, the induced thermovoltage in the irradiated LBDMs is spin polarized, and can also become valley polarized if the gate voltage is applied too. It is also found that the valley (spin) polarization of the induced thermovoltage could be inverted by reversing the circular polarization of light or reversing the direction the electric field (only by reversing the circular polarization of light).

The spin dependent odderon in the diquark model

Energy Technology Data Exchange (ETDEWEB)

Szymanowski, Lech [National Centre for Nuclear Research (NCBJ), Warsaw (Poland); Zhou, Jian, E-mail: jzhou@sdu.edu.cn [School of Physics, & Key Laboratory of Particle Physics and Particle Irradiation (MOE), Shandong University, Jinan, Shandong 250100 (China); Nikhef and Department of Physics and Astronomy, VU University Amsterdam, De Boelelaan 1081, NL-1081 HV Amsterdam (Netherlands)

2016-09-10

In this short note, we report a di-quark model calculation for the spin dependent odderon and demonstrate that the asymmetrical color source distribution in the transverse plane of a transversely polarized hadron plays an essential role in yielding the spin dependent odderon. This calculation confirms the earlier finding that the spin dependent odderon is closely related to the parton orbital angular momentum.

Nuclear-spin-dependent parity-nonconserving effects in thallium, lead and bismuth atoms

International Nuclear Information System (INIS)

Khriplovich, I.B.

1994-01-01

Nuclear-spin-dependent P-odd optical activity in atomic Tl, Pb and Bi is calculated. Its magnitude is expressed analytically through the main contribution to the optical rotation, which is independent of nuclear spin. The accuracy of results is discussed. 31 refs., 2 tabs

Effects of strain and quantum confinement in optically pumped nuclear magnetic resonance in GaAs: Interpretation guided by spin-dependent band structure calculations

Science.gov (United States)

Wood, R. M.; Saha, D.; McCarthy, L. A.; Tokarski, J. T.; Sanders, G. D.; Kuhns, P. L.; McGill, S. A.; Reyes, A. P.; Reno, J. L.; Stanton, C. J.; Bowers, C. R.

2014-10-01

A combined experimental-theoretical study of optically pumped nuclear magnetic resonance (OPNMR) has been performed in a GaAs /A l0.1G a0.9As quantum well film epoxy bonded to a Si substrate with thermally induced biaxial strain. The photon energy dependence of the Ga OPNMR signal was recorded at magnetic fields of 4.9 and 9.4 T at a temperature of 4.8-5.4 K. The data were compared to the nuclear spin polarization calculated from the electronic structure and differential absorption to spin-up and spin-down states of the electron conduction band using a modified k .p model based on the Pidgeon-Brown model. Comparison of theory with experiment facilitated the assignment of features in the OPNMR energy dependence to specific interband Landau level transitions. The results provide insight into how effects of strain and quantum confinement are manifested in optical nuclear polarization in semiconductors.

Thermal conductivity of a quantum spin-1/2 antiferromagnetic chain with magnetic impurities

International Nuclear Information System (INIS)

Zviagin, A.A.

2008-01-01

We present an exact theory that describes how magnetic impurities change the behavior of the thermal conductivity for the integrable Heisenberg antiferromagnetic quantum spin-1/2 chain. Single magnetic impurities and a large concentration of impurities with similar values of the couplings to the host chain (a weak disorder) do not change the linear-in-temperature low-T behavior of the thermal conductivity: Only the slope of that behavior becomes smaller, compared to the homogeneous case. The strong disorder in the distribution of the impurity-host couplings produces more rapid temperature growth of the thermal conductivity, compared to the linear-in-T dependence of the homogeneous chain and the chain with weak disorder. Recent experiments on the thermal conductivity in inhomogeneous quasi-one-dimensional quantum spin systems manifest qualitative agreement with our results

Spin-Dependent Scattering Effects and Dimensional Crossover in a Quasi-Two-Dimensional Disordered Electron System

Institute of Scientific and Technical Information of China (English)

YANG YongHong; WANG YongGang; LIU Mei; WANG Jin

2002-01-01

Two kinds of spin-depcndcnt scattering effects (magnetic-iinpurity and spin-orbit scatterings) axe investi-gated theoretically in a quasi-two-dimensional (quasi-2D) disordered electron system. By making use of the diagrammatictechniques in perturbation theory, we have calculated the dc conductivity and magnetoresistance due to weak-localizationeffects, the analytical expressions of them are obtained as functions of the interlayer hopping energy and the charac-teristic times: elastic, inelastic, magnetic and spin-orbit scattering times. The relevant dimensional crossover behaviorfrom 3D to 2D with decreasing the interlayer coupling is discussed, and the condition for the crossover is shown to bedependent on the aforementioned scattering times. At low temperature there exists a spin-dcpendent-scattering-induccddimensional crossover in this system.

Bulk magnon spin current theory for the longitudinal spin Seebeck effect

Energy Technology Data Exchange (ETDEWEB)

Rezende, S.M., E-mail: rezende@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil); Rodríguez-Suárez, R.L. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil); Facultad de Física, Pontificia Universidad Católica de Chile, Casilla, 306 Santiago (Chile); Cunha, R.O.; López Ortiz, J.C.; Azevedo, A. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, Pernambuco (Brazil)

2016-02-15

The longitudinal spin Seebeck effect (LSSE) consists in the generation of a spin current parallel to a temperature gradient applied across the thickness of a bilayer made of a ferromagnetic insulator (FMI), such as yttrium iron garnet (YIG), and a metallic layer (ML) with strong spin orbit coupling, such as platinum. The LSSE is usually detected by a DC voltage generated along the ML due to the conversion of the spin current into a charge current perpendicular to the static magnetic field by means of the inverse spin Hall effect. Here we present a model for the LSSE that relies on the bulk magnon spin current created by the temperature gradient across the thickness of the FMI. We show that the spin current pumped into the metallic layer by the magnon accumulation in the FMI provides continuity of the spin current at the FMI/ML interface and is essential for the existence of the LSSE. The results of the theory are in good agreement with experimental LSSE data in YIG/Pt bilayers on the variation of the DC voltage with the sample temperature, with the FMI layer thickness and with the intensity of high magnetic fields. - Highlights: • We present a theory for the longitudinal spin Seebeck effect based on bulk magnons. • The model explains quantitatively the measured voltage in YIG/Pt created by the LSSE. • The model explains quantitatively the temperature dependence of LSSE measured in YIG/Pt. • The model agrees qualitatively with the measured dependence of LSSE with YIG thickness. • The model agrees qualitatively with the measured dependence of LSSE on magnetic field.

Spin-charge coupled dynamics driven by a time-dependent magnetization

Science.gov (United States)

Tölle, Sebastian; Eckern, Ulrich; Gorini, Cosimo

2017-03-01

The spin-charge coupled dynamics in a thin, magnetized metallic system are investigated. The effective driving force acting on the charge carriers is generated by a dynamical magnetic texture, which can be induced, e.g., by a magnetic material in contact with a normal-metal system. We consider a general inversion-asymmetric substrate/normal-metal/magnet structure, which, by specifying the precise nature of each layer, can mimic various experimentally employed setups. Inversion symmetry breaking gives rise to an effective Rashba spin-orbit interaction. We derive general spin-charge kinetic equations which show that such spin-orbit interaction, together with anisotropic Elliott-Yafet spin relaxation, yields significant corrections to the magnetization-induced dynamics. In particular, we present a consistent treatment of the spin density and spin current contributions to the equations of motion, inter alia, identifying a term in the effective force which appears due to a spin current polarized parallel to the magnetization. This "inverse-spin-filter" contribution depends markedly on the parameter which describes the anisotropy in spin relaxation. To further highlight the physical meaning of the different contributions, the spin-pumping configuration of typical experimental setups is analyzed in detail. In the two-dimensional limit the buildup of dc voltage is dominated by the spin-galvanic (inverse Edelstein) effect. A measuring scheme that could isolate this contribution is discussed.

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-10-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

Effects of nuclear structure in the spin-dependent scattering of weakly interacting massive particles

Science.gov (United States)

Nikolaev, M. A.; Klapdor-Kleingrothaus, H. V.

1993-06-01

We present calculations of the nuclear from factors for spin-dependent elastic scattering of dark matter WIMPs from123Te and131Xe isotopes, proposed to be used for dark matter detection. A method based on the theory of finite Fermi systems was used to describe the reduction of the single-particle spin-dependent matrix elements in the nuclear medium. Nucleon single-particle states were calculated in a realistic shell model potential; pairing effects were treated within the BCS model. The coupling of the lowest single-particle levels in123Te to collective 2+ excitations of the core was taken into account phenomenologically. The calculated nuclear form factors are considerably less then the single-particle ones for low momentum transfer. At high momentum transfer some dynamical amplification takes place due to the pion exchange term in the effective nuclear interaction. But as the momentum transfer increases, the difference disappears, the momentum transfer increases and the quenching effect disappears. The shape of the nuclear form factor for the131Xe isotope differs from the one obtained using an oscillator basis.

Effects of nuclear structure in the spin-dependent scattering of weakly interacting massive particles

International Nuclear Information System (INIS)

Nikolaev, M.A.; Klapdor-Kleingrothaus, H.V.

1993-01-01

We present calculations of the nuclear from factors for spin-dependent elastic scattering of dark matter WIMPs from 123 Te and 131 Xe isotopes, proposed to be used for dark matter detection. A method based on the theory of finite Fermi systems was used to describe the reduction of the single-particle spin-dependent matrix elements in the nuclear medium. Nucelon single-particle states were calculated in a realistic shell model potential; pairing effects were treated within the BCS model. The coupling of the lowest single-particle levels in 123 Te to collective 2 + excitations of the core was taken into account phenomenologically. The calculated nuclear form factors are considerably less then the single-particle ones for low momentum transfer. At high momentum transfer some dynamical amplification takes place due to the pion exchange term in the effective nuclear interaction. But as the momentum transfer increases, the difference disappears, the momentum transfer increases and quenching effect disappears. The shape of the nuclear form factor for the 131 Xe isotope differs from the one obtained using an oscillator basis. (orig.)

Inverse spin-valve effect in nanoscale Si-based spin-valve devices

Science.gov (United States)

Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

2017-12-01

We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

A facile approach to spinning multifunctional conductive elastomer fibres with nanocarbon fillers

International Nuclear Information System (INIS)

Seyedin, Shayan; Razal, Joselito M; Innis, Peter C; Wallace, Gordon G

2016-01-01

Electrically conductive elastomeric fibres prepared using a wet-spinning process are promising materials for intelligent textiles, in particular as a strain sensing component of the fabric. However, these fibres, when reinforced with conducting fillers, typically result in a compromise between mechanical and electrical properties and, ultimately, in the strain sensing functionality. Here we investigate the wet-spinning of polyurethane (PU) fibres with a range of conducting fillers such as carbon black (CB), single-walled carbon nanotubes (SWCNTs), and chemically converted graphene. We show that the electrical and mechanical properties of the composite fibres were strongly dependent on the aspect ratio of the filler and the interaction between the filler and the elastomer. The high aspect ratio SWCNT filler resulted in fibres with the highest electrical properties and reinforcement, while the fibres produced from the low aspect ratio CB had the highest stretchability. Furthermore, PU/SWCNT fibres presented the largest sensing range (up to 60% applied strain) and the most consistent and stable cyclic sensing behaviour. This work provides an understanding of the important factors that influence the production of conductive elastomer fibres by wet-spinning, which can be woven or knitted into textiles for the development of wearable strain sensors. (paper)

Effects of V-shaped edge defect and H-saturation on spin-dependent electronic transport of zigzag MoS2 nanoribbons

International Nuclear Information System (INIS)

Li, Xin-Mei; Long, Meng-Qiu; Cui, Li-Ling; Xiao, Jin; Zhang, Xiao-Jiao; Zhang, Dan; Xu, Hui

2014-01-01

Based on nonequilibrium Green's function in combination with density functional theory calculations, the spin-dependent electronic transport properties of one-dimensional zigzag molybdenum disulfide (MoS 2 ) nanoribbons with V-shaped defect and H-saturation on the edges have been studied. Our results show that the spin-polarized transport properties can be found in all the considered zigzag MoS 2 nanoribbons systems. The edge defects, especially the V-shaped defect on the Mo edge, and H-saturation on the edges can suppress the electronic transport of the systems. Also, the spin-filtering and negative differential resistance behaviors can be observed obviously. The mechanisms are proposed for these phenomena. - Highlights: • The spin-dependent electronic transport of zigzag MoS 2 nanoribbons. • The effects of V-shaped edge defect and H-saturation. • The effects of spin-filter and negative differential resistance can be observed

Spin-dependent Hall effect in degenerate semiconductors: a theoretical study

Energy Technology Data Exchange (ETDEWEB)

Idrish Miah, M [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)], E-mail: m.miah@griffith.edu.au

2008-10-15

The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V{sub SDH}) is derived, and drift and diffusive contributions to V{sub SDH} are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V{sub SDH} increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V{sub SDH} is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.

Spin-dependent Hall effect in degenerate semiconductors: a theoretical study

International Nuclear Information System (INIS)

Idrish Miah, M

2008-01-01

The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V SDH ) is derived, and drift and diffusive contributions to V SDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V SDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V SDH is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.

The temperature dependence of quantum spin pumping generated using electron spin resonance with three-magnon splittings

International Nuclear Information System (INIS)

Nakata, Kouki

2013-01-01

On the basis of the Schwinger–Keldysh formalism, we have closely investigated the temperature dependence of quantum spin pumping generated using electron spin resonance. We have clarified that three-magnon splittings excite non-zero modes of magnons and characterize the temperature dependence of quantum spin pumping generated using electron spin resonance. (paper)

Effect of Rashba and Dresselhaus Spin-Orbit Couplings on Electron Spin Polarization in a Hybrid Magnetic-Electric Barrier Nanostructure

Science.gov (United States)

Yang, Shi-Peng; Lu, Mao-Wang; Huang, Xin-Hong; Tang, Qiang; Zhou, Yong-Long

2017-04-01

A theoretical study has been carried out on the spin-dependent electron transport in a hybrid magnetic-electric barrier nanostructure with both Rashba and Dresselhaus spin-orbit couplings, which can be experimentally realized by depositing a ferromagnetic strip and a Schottky metal strip on top of a semiconductor heterostructure. The spin-orbit coupling-dependent transmission coefficient, conductance, and spin polarization are calculated by solving the Schrödinger equation exactly with the help of the transfer-matrix method. We find that both the magnitude and sign of the electron spin polarization vary strongly with the spin-orbit coupling strength. Thus, the degree of electron spin polarization can be manipulated by properly adjusting the spin-orbit coupling strength, and such a nanosystem can be employed as a controllable spin filter for spintronics applications.

Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels

Science.gov (United States)

Osintsev, D.; Sverdlov, V.; Stanojević, Z.; Makarov, A.; Selberherr, S.

2012-05-01

We study the transport properties of the Datta-Das spin field-effect transistor built on InAs and Si. First, we demonstrate that the amplitude of the magnetoresistance oscillations as a function of the band mismatch between the ferromagnetic contacts and the semiconductor channel made of InAs decreases dramatically with increasing temperature. A shorter InAs channel is needed to create an InAs-based SpinFET which will operate at higher temperatures. Second, we show that the [1 0 0] orientation of the fin is preferable for silicon SpinFETs due to stronger modulation of the conductance as a function of spin-orbit interaction and magnetic field. Short silicon fins can be used for current modulation as a function of the conduction band mismatch between the channel and the ferromagnetic contacts only at relatively low temperatures. In contrast, longer silicon channels allow a TMR modulation at room temperature by changing the strength of the spin-orbit interaction through the gate bias.

Spin-dependent tunneling transport into CrO2 nanorod devices with nonmagnetic contacts.

Science.gov (United States)

Song, Yipu; Schmitt, Andrew L; Jin, Song

2008-08-01

Single-crystal nanorods of half-metallic chromium dioxide (CrO2) were synthesized and structurally characterized. Spin-dependent electrical transport was investigated in individual CrO2 nanorod devices contacted with nonmagnetic metallic electrodes. Negative magnetoresistance (MR) was observed at low temperatures due to the spin-dependent direct tunneling through the contact barrier and the high spin polarization in the half-metallic nanorods. The magnitude of this negative magnetoresistance decreases with increasing bias voltage and temperature due to spin-independent inelastic hopping through the barrier, and a small positive magnetoresistance was found at room temperature. It is believed that the contact barrier and the surface state of the nanorods have great influence on the spin-dependent transport limiting the magnitude of MR effect in this first attempt at spin filter devices of CrO2 nanorods with nonmagnetic contacts.

Conductance dips and spin precession in a nonuniform waveguide with spin–orbit coupling

Energy Technology Data Exchange (ETDEWEB)

Malyshev, A. I., E-mail: malyshev@phys.unn.ru; Kozulin, A. S. [Lobachevsky Nizhny Novgorod State University (Russian Federation)

2015-07-15

An infinite waveguide with a nonuniformity, a segment of finite length with spin–orbit coupling, is considered in the case when the Rashba and Dresselhaus parameters are identical. Analytical expressions have been derived in the single-mode approximation for the conductance of the system for an arbitrary initial spin state. Based on numerical calculations with several size quantization modes, we have detected and described the conductance dips arising when the waves are localized in the nonuniformity due to the formation of an effective potential well in it. We show that allowance for the evanescent modes under carrier spin precession in an effective magnetic field does not lead to a change in the direction of the average spin vector at the output of the system.

Temperature dependence of the spin Seebeck effect in [Fe3O4/Pt]n multilayers

Directory of Open Access Journals (Sweden)

R. Ramos

2017-05-01

Full Text Available We report temperature dependent measurements of the spin Seebeck effect (SSE in multilayers formed by repeated growth of a Fe3O4/Pt bilayer junction. The magnitude of the observed enhancement of the SSE, relative to the SSE in the single bilayer, shows a monotonic increase with decreasing the temperature. This result can be understood by an increase of the characteristic length for spin current transport in the system, in qualitative agreement with the recently observed increase in the magnon diffusion length in Fe3O4 at lower temperatures. Our result suggests that the thermoelectric performance of the SSE in multilayer structures can be further improved by careful choice of materials with suitable spin transport properties.

Spin tune dependence on closed orbit in RHIC

International Nuclear Information System (INIS)

Ptitsyn, V.; Bai, M.; Roser, T.

2010-01-01

Polarized proton beams are accelerated in RHIC to 250 GeV energy with the help of Siberian Snakes. The pair of Siberian Snakes in each RHIC ring holds the design spin tune at 1/2 to avoid polarization loss during acceleration. However, in the presence of closed orbit errors, the actual spin tune can be shifted away from the exact 1/2 value. It leads to a corresponding shift of locations of higher-order ('snake') resonances and limits the available betatron tune space. The largest closed orbit effect on the spin tune comes from the horizontal orbit angle between the two snakes. During RHIC Run in 2009 dedicated measurements with polarized proton beams were taken to verify the dependence of the spin tune on the local orbits at the Snakes. The experimental results are presented along with the comparison with analytical predictions.

Drude weight and optical conductivity of a two-dimensional heavy-hole gas with k-cubic spin-orbit interactions

Energy Technology Data Exchange (ETDEWEB)

Mawrie, Alestin; Ghosh, Tarun Kanti [Department of Physics, Indian Institute of Technology-Kanpur, Kanpur 208 016 (India)

2016-01-28

We present a detailed theoretical study on zero-frequency Drude weight and optical conductivity of a two-dimensional heavy-hole gas (2DHG) with k-cubic Rashba and Dresselhaus spin-orbit interactions. The presence of k-cubic spin-orbit couplings strongly modifies the Drude weight in comparison to the electron gas with k-linear spin-orbit couplings. For large hole density and strong k-cubic spin-orbit couplings, the density dependence of Drude weight deviates from the linear behavior. We establish a relation between optical conductivity and the Berry connection. Unlike two-dimensional electron gas with k-linear spin-orbit couplings, we explicitly show that the optical conductivity does not vanish even for equal strength of the two spin-orbit couplings. We attribute this fact to the non-zero Berry phase for equal strength of k-cubic spin-orbit couplings. The least photon energy needed to set in the optical transition in hole gas is one order of magnitude smaller than that of electron gas. Types of two van Hove singularities appear in the optical spectrum are also discussed.

Effect of Δ-isobar excitation on spin-dependent observables of elastic nucleon-deuteron scattering

International Nuclear Information System (INIS)

Nemoto, S.; Oryu, S.; Chmielewski, K.; Sauer, P.U.

2000-01-01

Δ-isobar excitation in the nuclear medium yields an effective three-nucleon force. A coupled-channel formulation with Δ-isobar excitation developed previously is used. The three-particle scattering equations are solved by a separable expansion of the two-baryon transition matrix for elastic nucleon-deuteron scattering. The effect of Δ-isobar excitation on the spin-dependent observables is studied at energies above 50 MeV nucleon lab energy. (author)

Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

International Nuclear Information System (INIS)

Tang, N.Y.

2009-01-01

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current-voltage (I-V) characteristics at low temperature. The spin polarization decreases with the temperature due to the thermal effect of electron density of states. When charge polarization effect is considered at the heterostructure, the spin polarization is enhanced significantly. A highly spin-polarized current can be obtained depending on the polarization charge density.

Theoretical models of the spin-dependent charge-carrier dynamics in metals and semiconductors

International Nuclear Information System (INIS)

Krauss, Michael

2010-01-01

This thesis is concerned with spin-dependent carrier dynamics in semiconductors and metals. We are especially interested in the dynamics on ultrashort timescales, which can be driven by ultrashort optical excitation, and use of a theoretical description in terms of the dynamical spin-density matrix. The first part of this thesis is concerned with spin-dependent carrier dynamics in bulk GaAs. For conduction electrons in GaAs, the most important mechanisms, by which an electron spin polarization can be destroyed, are the Dyakonov-Perel and Bir-Aronov-Pikus mechanisms. For the Dyakonov-Perel effect, our treatment is the first calculation of the dynamics of the spindensity matrix for bulk GaAs. From our microsopic calculation, we extract spin-dephasing times. In particular, we can describe the dependence of the spin-dephasing time for a wide range of n-doping concentrations and explain the spin-dephasing dynamics in and out of the motional-narrowing regime. For the Bir-Aronov-Pikus mechanism, i.e., the exchange interaction of electronics with holes, approximate relaxation times for limiting cases were derived about 30 years ago. We show that these approaches provide an incomplete picture of spin relaxation, and are only valid for high or low densities, whereas the microscopic calculation is capable of explaining the electronic dynamics also for intermediate doping densities, which are most interesting for typical experiments. The spin-dependent hole dynamics in GaAs is much faster than that of electrons, because the p-like hole bands experience the spin-orbit interaction directly, rather than through the interaction with other bands. The resulting spin relaxation is sometimes referred to as an Elliott-Yafet mechanism. For the first time, we present results for the microscopic dynamics of this mechanism for holes in bulk GaAs, and we discuss the different results that may be obtained with different measurement techniques. We also analyze the importance of ''spin hot

Spin-dependent tunneling transport in a lateral magnetic diode

International Nuclear Information System (INIS)

Wang, Yu; Shi, Ying

2012-01-01

Based on the gate-tunable two-dimensional electron gas, we have constructed laterally a double-barrier resonant tunneling structure by employing a peculiar triple-gate configuration, namely a ferromagnetic gate sandwiched closely by a pair of Schottky gates. Because of the in-plane stray field of ferromagnetic gate, the resulting bound spin state in well gives rise to the remarkable resonant spin polarization following the spin-dependent resonant tunneling regime. Importantly, by aligning the bound spin state through surface gate-voltage configuration, this resonant spin polarization can be externally manipulated, showing the desirable features for the spin-logic device applications. -- Highlights: ► A lateral spin-RTD was proposed by applying triple-gate modulated 2DEG. ► Spin-dependent resonant tunneling transport and large resonant spin polarization has been clarified from the systematic simulation. ► Both electric and/or magnetic strategies can be employed to modulate the system spin transport, providing the essential features for the spin-logic application.

Experimental energy-dependent nuclear spin distributions

International Nuclear Information System (INIS)

Egidy, T. von; Bucurescu, D.

2009-01-01

A new method is proposed to determine the energy-dependent spin distribution in experimental nuclear-level schemes. This method compares various experimental and calculated moments in the energy-spin plane to obtain the spin-cutoff parameter σ as a function of mass A and excitation energy using a total of 7202 levels with spin assignment in 227 nuclei between F and Cf. A simple formula, σ 2 =0.391 A 0.675 (E-0.5Pa ' ) 0.312 , is proposed up to about 10 MeV that is in very good agreement with experimental σ values and is applied to improve the systematics of level-density parameters.

Extrinsic spin Hall effect in graphene

Science.gov (United States)

Rappoport, Tatiana

The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

Q2 dependence of the spin structure function in the resonance region

International Nuclear Information System (INIS)

Li, Z.; Li, Z.

1994-01-01

In this paper, we show what we can learn from the CEBAF experiments on spin-structure functions, and the transition from the Drell-Hearn-Gerasimov sum rule in the real photon limit to the spin-dependent sum rules in deep inelastic scattering, and how the asymmetry A 1 (x,Q 2 ) approaches the scaling limit in the resonance region. The spin structure function in the resonance region alone cannot determine the spin-dependent sum rule due to the kinematic restriction of the resonance region. The integral ∫ 0 1 {A 1 (x,Q 2 )F 2 (x,Q 2 )/2x[1+R(x,Q 2 )]}dx is estimated from Q 2 =0--2.5 GeV 2 . The result shows that there is a region where both contributions from the baryon resonances and the deep inelastic scattering are important; thus it provides important information on the high twist effects on the spin-dependent sum rule

Spin and spinless conductivity in polypyrrole. Evidence for mixed-valence conduction

Energy Technology Data Exchange (ETDEWEB)

Zotti, G.; Schiavon, G. (Ist. di Polarografia ed Elettrochimica Preparativa, Padova (Italy))

In situ conductivity of polypyrrole (as tosylate) as a function of oxidative doping level attains a maximum at three-quarters the total oxidation charge and the relevant in situ ESR signal corresponds to an equal concentration of spin-carrying (polaron) and spinless (bipolaron) species. Results are explained on the basis of mixed-valence conduction. Bipolaron conduction, taking the place of polaron-bipolaron conductivity at higher oxidation levels, accounts for persisting conductivity in the high-oxidation state.

Spin dependent photon structure functions

International Nuclear Information System (INIS)

Manohar, A.V.; Massachusetts Inst. of Tech., Cambridge

1989-01-01

Spin dependent structure functions of the photon are studied using the operator product expansion. There are new twist-two photon and gluon operators which contribute. The structure functions g 1 and F 3 are calculable in QCD, but differ from their free quark values. The corrections to F 3 are suppressed by 1/log Q 2 . The calculation is an extension of the analysis of Witten for the spin averaged structure functions F 1 and F 2 . (orig.)

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid

Science.gov (United States)

Korenev, V. L.; Akimov, I. A.; Zaitsev, S. V.; Sapega, V. F.; Langer, L.; Yakovlev, D. R.; Danilov, Yu. A.; Bayer, M.

2012-07-01

Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk semiconductor hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means of spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts as an orientation-dependent separator for carrier spins confined in a semiconductor quantum well that is set apart from the ferromagnet by a barrier only a few nanometers thick. By this spin-separation effect, a non-equilibrium electron-spin polarization is accumulated in the quantum well due to spin-dependent electron transfer to the ferromagnet. The significant advance of this hybrid design is that the excellent optical properties of the quantum well are maintained. This opens up the possibility of optical readout of the ferromagnet's magnetization and control of the non-equilibrium spin polarization in non-magnetic quantum wells.

Spin hall effect associated with SU(2) gauge field

Science.gov (United States)

Tao, Y.

2010-01-01

In this paper, we focus on the connection between spin Hall effect and spin force. Here we investigate that the spin force due to spin-orbit coupling, which, in two-dimensional system, is equivalent to forces of Hirsch and Chudnovsky besides constant factors 3 and frac{3}{2} respectively, is a part of classic Anandan force, and that the spin Hall effect is an anomalous Hall effect. Furthermore, we develop the method of AC phase to derive the expression for the spin force, and note that the most basic spin Hall effect indeed originate from the AC phase and is therefore an intrinsic quantum mechanical property of spin. This method differs from approach of Berry phase in the study of anomalous Hall effect , which is the intrinsic property of the perfect crystal. On the other hand, we use an elegant skill to show that the Chudnovsky-Drude model is reasonable. Here we have improved the theoretical values of spin Hall conductivity of Chudnovsky. Compared to the theoretical values of spin Hall conductivity in the Chudnovsky-Drude model, ours are in better agreement with experimentation. Finally, we discuss the relation between spin Hall effect and fractional statistics.

Spin-current emission governed by nonlinear spin dynamics.

Science.gov (United States)

Tashiro, Takaharu; Matsuura, Saki; Nomura, Akiyo; Watanabe, Shun; Kang, Keehoon; Sirringhaus, Henning; Ando, Kazuya

2015-10-16

Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.

Spin-filtering and giant magnetoresistance effects in polyacetylene-based molecular devices

Science.gov (United States)

Chen, Tong; Yan, Shenlang; Xu, Liang; Liu, Desheng; Li, Quan; Wang, Lingling; Long, Mengqiu

2017-07-01

Using the non-equilibrium Green's function formalism in combination with density functional theory, we performed ab initio calculations of spin-dependent electron transport in molecular devices consisting of a polyacetylene (CnHn+1) chain vertically attached to a carbon chain sandwiched between two semi-infinite zigzag-edged graphene nanoribbon electrodes. Spin-charge transport in the device could be modulated to different magnetic configurations by an external magnetic field. The results showed that single spin conduction could be obtained. Specifically, the proposed CnHn+1 devices exhibited several interesting effects, including (dual) spin filtering, spin negative differential resistance, odd-even oscillation, and magnetoresistance (MR). Marked spin polarization with a filtering efficiency of up to 100% over a large bias range was found, and the highest MR ratio for the CnHn+1 junctions reached 4.6 × 104. In addition, the physical mechanisms for these phenomena were also revealed.

Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals

KAUST Repository

Li, Hang; Wang, Xuhui; Manchon, Aurelien

2016-01-01

We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.

Valley-dependent spin-orbit torques in two-dimensional hexagonal crystals

KAUST Repository

Li, Hang

2016-01-11

We study spin-orbit torques in two-dimensional hexagonal crystals such as graphene, silicene, germanene, and stanene. The torque possesses two components, a fieldlike term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-k space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.

Experimental Test of the Spin Mixing Interface Conductivity Concept

NARCIS (Netherlands)

Weiler, M.; Althammer, M.; Schreier, M.; Lotze, J.; Pernpeintner, M.; Meyer, S.; Huebl, H.; Gross, R.; Kamra, A.; Xiao, J.; Chen, Y.T.; Jiao, H.J.; Bauer, G.E.W.; Goennenwein, S.T.B.

2013-01-01

We perform a quantitative, comparative study of the spin pumping, spin Seebeck, and spin Hall magnetoresistance effects, all detected via the inverse spin Hall effect in a series of over 20??yttrium???iron?garnet/Pt samples. Our experimental results fully support present, exclusively spin

Electron-Spin Precession in Dependence of the Orientation of the External Magnetic Field.

Science.gov (United States)

Miah, M Idrish

2009-03-13

Electron-spin dynamics in semiconductor-based heterostructures has been investigated in oblique magnetic fields. Spins are generated optically by a circularly polarized light, and the dynamics of spins in dependence of the orientation (theta) of the magnetic field are studied. The electron-spin precession frequency, polarization amplitude, and decay rate as a function of theta are obtained and the reasons for their dependences are discussed. From the measured data, the values of the longitudinal and transverse components of the electron g-factor are estimated and are found to be in good agreement with those obtained in earlier investigations. The possible mechanisms responsible for the observed effects are also discussed.

On the temperature dependence of spin pumping in ferromagnet–topological insulator–ferromagnet spin valves

Directory of Open Access Journals (Sweden)

A.A. Baker

Full Text Available Topological insulators (TIs have a large potential for spintronic devices owing to their spin-polarized, counter-propagating surface states. Recently, we have investigated spin pumping in a ferromagnet–TI–ferromagnet structure at room temperature. Here, we present the temperature-dependent measurement of spin pumping down to 10 K, which shows no variation with temperature. Keywords: Topological insulator, Spin pumping, Spintronics, Ferromagnetic resonance

Spin injection and inverse Edelstein effect in the surface states of topological Kondo insulator SmB6

Science.gov (United States)

Song, Qi; Mi, Jian; Zhao, Dan; Su, Tang; Yuan, Wei; Xing, Wenyu; Chen, Yangyang; Wang, Tianyu; Wu, Tao; Chen, Xian Hui; Xie, X. C.; Zhang, Chi; Shi, Jing; Han, Wei

2016-01-01

There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TIs), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin–momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observe the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB6. At low temperatures when only surface carriers are present, a clear spin signal is observed. Furthermore, the magnetic field angle dependence of the spin signal is consistent with spin–momentum locking property of surface states of SmB6. PMID:27834378

Theory of spin Hall effect

OpenAIRE

Chudnovsky, Eugene M.

2007-01-01

An extension of Drude model is proposed that accounts for spin and spin-orbit interaction of charge carriers. Spin currents appear due to combined action of the external electric field, crystal field and scattering of charge carriers. The expression for spin Hall conductivity is derived for metals and semiconductors that is independent of the scattering mechanism. In cubic metals, spin Hall conductivity $\\sigma_s$ and charge conductivity $\\sigma_c$ are related through $\\sigma_s = [2 \\pi \\hbar...

Non-Arrhenius conductivity in the fast ionic conductor Li0.5La0.5TiO3: Reconciling spin-lattice and electrical-conductivity relaxations

International Nuclear Information System (INIS)

Leon, C.; Santamaria, J.; Paris, M.A.; Sanz, J.; Ibarra, J.; Torres, L.M.

1997-01-01

Nuclear magnetic resonance and electrical conductivity measurements are conducted to study the dynamics of the ionic diffusion process in the crystalline ionic conductor Li 0.5 La 0.5 TiO 3 . dc conductivity shows a non-Arrhenius temperature dependence, similar to the one recently reported for some ionic conducting glasses. Spin-lattice and conductivity relaxations are analyzed in the same frequency and temperature range in terms of the non-Arrhenius dependence of the correlation time. Both relaxations are then described using a single correlation function of the form f(t)=exp(-(t/τ) β ), with β=0.4 over the whole temperature range. copyright 1997 The American Physical Society

Comparative Aspects of Spin-Dependent Interaction Potentials for Spin-1/2 and Spin-1 Matter Fields

Directory of Open Access Journals (Sweden)

P. C. Malta

2016-01-01

Full Text Available This paper sets out to establish a comparative study between classes of spin- and velocity-dependent potentials for spin-1/2 and spin-1 matter currents/sources in the nonrelativistic regime. Both (neutral massive scalar and vector particles are considered to mediate the interactions between (pseudo-scalar sources or (pseudo-vector currents. Though our discussion is more general, we contemplate specific cases in which our results may describe the electromagnetic interaction with a massive (Proca-type photon exchanged between two spin-1/2 or two spin-1 carriers. We highlight the similarities and peculiarities of the potentials for the two different types of charged matter and also focus our attention on the comparison between the particular aspects of two different field representations for spin-1 matter particles. We believe that our results may contribute to a further discussion of the relation between charge, spin, and extensibility of elementary particles.

Effect of spin-orbit coupling on the wave vector and spin dependent transmission probability for the GaN/AlGaN/GaN heterostructure

International Nuclear Information System (INIS)

Li, M; Zhao, Z B; Fan, L B

2015-01-01

The effect of the Rashba and Dresselhaus spin–orbit coupling (SOC) on the transmission of electrons through the GaN/AlGaN/GaN heterostructure is studied. It is found that the Dresselhaus SOC causes the evident dependence of the transmission probability on the spin polarization and the in-plane wave vector of electrons, and also induces evident spin splitting of the resonant peaks in the (E z -k) plane. Because the magnitude of the Rashba SOC is relatively small, its effect on the transmission of electrons is much less. As k increases, the peaks of transmission probability for spin-up electrons (T + ) shift to a higher energy region and increase in magnitude, while the peaks of transmission probability for spin-down electrons (T − ) shift to a lower energy region and decrease in magnitude. The polarization efficiency (P) is found to peak at the resonant energies and increases with the in-plane wave vector. Moreover, the built-in electric field caused by the spontaneous and piezoelectric polarization can increase the amplitude of P. Results obtained here are helpful for the efficient spin injection into the III-nitride heterostructures by nonmagnetic means from the device point of view. (paper)

Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

KAUST Repository

Ortiz Pauyac, Christian

2013-06-26

In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

KAUST Repository

Ortiz Pauyac, Christian; Wang, Xuhui; Chshiev, Mairbek; Manchon, Aurelien

2013-01-01

In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

Quantitative determination of spin-dependent quasiparticle renormalization in ferromagnetic 3d metals

Energy Technology Data Exchange (ETDEWEB)

Sanchez-Barriga, Jaime; Varykhalov, Andrei; Fink, Joerg; Rader, Oliver; Duerr, Hermann; Eberhardt, Wolfgang [Bessy GmbH, Berlin (Germany)

2008-07-01

Spin dependent low-energy electronic excitations in 3d ferromagnets are of special interest due to the need of a microscopic understanding of the electronic structure of solids. Low-energy electrons (or holes) become dressed by a cloud of excitations resulting in quasiparticles of a finite lifetime and a different effective mass. These type of excitations have been studied by many theoretical methods, and it has been found that because of many body effects no sharp quasiparticle peaks exist for binding energies larger than 2 eV. Interestingly, it has been shown that strong correlation effects could particularly affect majority spin electrons, leading to a pronounced damping of quasiparticles at binding energies around 2 eV and above. In order to give an experimental corroboration to these findings, we have performed a systematic study of the spin-dependent quasiparticle lifetime and band structure of ferromagnetic 3d transition metal surfaces by means of spin and angle-resolved photoemission spectroscopy. On hcp Co(0001), fcc Ni(111) and bcc Fe(110), we have found a more pronounced renormalization of the majority spin quasiparticle spectral weight going from Ni to Co which are both strong ferromagnets. For Fe, a weak ferromagnet, such a process becomes more prominent in the minority channel.

Magneto-spin Hall conductivity of a two-dimensional electron gas

OpenAIRE

Milletari', M.; Raimondi, R.; Schwab, P.

2008-01-01

It is shown that the interplay of long-range disorder and in-plane magnetic field gives rise to an out-of-plane spin polarization and a finite spin Hall conductivity of the two-dimensional electron gas in the presence of Rashba spin-orbit coupling. A key aspect is provided by the electric-field induced in-plane spin polarization. Our results are obtained first in the \\textit{clean} limit where the spin-orbit splitting is much larger than the disorder broadening of the energy levels via the di...

Spin—Dependent Scattering Effects and Dimensional Crossover in a Quasi—Two—Dimensional Disordered Electron System

Institute of Scientific and Technical Information of China (English)

YANGYong－Hong; WANGYong－Gang; 等

2002-01-01

Two kinds of spin-dependent scattering effects (magnetic-impurity and spin-orbit scatterings) are investigated theoretically in a quasi-tow-dimensional (quasi-2D) disordered electron system.By making use of the diagrammatic techniques in perturbation theory,we have calculated the dc conductivity and magnetoresistance due to weak-localization effects,the analytical expressions of them are obtained as functions of the interlayer hopping energy and the characteristic times:elastic,inelastic,magnetic and spin-orbit scattering times.The relevant dimensional crossover behavior from 3D to 2D with decreasing the interlayer coupling is discussed,and the condition for the crossover is shown to be dependent on the aforementioned scattering times.At low temperature there exists a spin-dependent-scattering-induced dimensional crossover in this system.

Electron-Spin Precession in Dependence of the Orientation of the External Magnetic Field

Directory of Open Access Journals (Sweden)

Miah M

2009-01-01

Full Text Available Abstract Electron-spin dynamics in semiconductor-based heterostructures has been investigated in oblique magnetic fields. Spins are generated optically by a circularly polarized light, and the dynamics of spins in dependence of the orientation (θ of the magnetic field are studied. The electron-spin precession frequency, polarization amplitude, and decay rate as a function ofθare obtained and the reasons for their dependences are discussed. From the measured data, the values of the longitudinal and transverse components of the electrong-factor are estimated and are found to be in good agreement with those obtained in earlier investigations. The possible mechanisms responsible for the observed effects are also discussed.

Ab-initio investigation of spin-dependent transport properties in Fe-doped armchair graphyne nanoribbons

Energy Technology Data Exchange (ETDEWEB)

GolafroozShahri, S.; Roknabadi, M.R., E-mail: roknabad@um.ac.ir; Shahtahmasebi, N.; Behdani, M.

2016-12-15

An ab-initio study on the spin-polarized transport properties of H-passivated Fe-doped graphyne nanoribbons is presented. All the calculations were based on density functional theory (DFT). Doping single magnetic atom on graphyne nanoribbons leads to metallicity which can significantly improve the conductivity. The currents are not degenerate for both up and down spin electrons and they are considerably spin-polarized. Therefore a relatively good spin-filtering can be expected. For configurations with geometric symmetry spin-rectifying is also observed. Therefore they can be applied as a dual spin-filter or a dual spin-diode in spintronic equipment. - Highlights: • The existence of Fe additional electrons lead to metallicity. • Doping magnetic atom on studied n-AGyNRs, has improved the conductance of nanoribbons. • The current for both spin electrons is considerably spin-polarized. • Threshold voltage decreased by increasing the width of ribbon. • For configurations with geometric symmetry spin-rectifying effect was also observed.

Position dependent spin wave spectrum in nanostrip magnonic waveguides

International Nuclear Information System (INIS)

Wang, Qi; Zhang, Huaiwu; Ma, Guokun; Liao, Yulong; Zhong, Zhiyong; Zheng, Yun

2014-01-01

The dispersion curves of propagating spin wave along different positions in nanostrip magnonic waveguides were studied by micromagnetic simulation. The results show that the modes of spin wave in the nanostrip magnonic waveguide are dependent on the position and the weak even modes of spin wave are excited even by symmetric excitation fields in a nanostrip magnonic waveguide. The reasons of the position dependent dispersion curve are explained by associating with geometrical confinement in the nanostrip magnonic waveguide

Irreversible magnetic-field dependence of ferromagnetic resonance and inverse spin Hall effect voltage in CoFeB/Pt bilayer

Energy Technology Data Exchange (ETDEWEB)

Kim, Sang-Il [Department of Materials Science and Engineering, Korea University, Seoul, 136-713 (Korea, Republic of); Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Seo, Min-Su [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Choi, Yeon Suk, E-mail: ychoi@kbsi.re.kr [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of); Park, Seung-Young, E-mail: parksy@kbsi.re.kr [Spin Engineering Physics Team, Division of Scientific Instrumentation, Korea Basic Science Institute, Daejeon, 305-806 (Korea, Republic of)

2017-01-01

Magnetic field (H) sweeping direction dependences of the mixed voltage V{sub mix} induced by the inverse-spin Hall effect(ISHE) and spin-rectified effect (SRE) in a CoFeB (5 nm)/Pt (10 nm) bilayer structure are investigated using the ferromagnetic resonance in the TE mode cavities and coplanar waveguide methods. Conventionally, the magnitude of ISHE voltage V{sub ISH} (symmetric) excluding the SRE (antisymmetric component) was unavoidably separated from the fitting curve of V{sub mix} (a sum of a symmetric and an antisymmetric part) for one direction of H-source. By studying the ratio of the two voltage parts with the bi-directional H sweeping, the optimized V{sub ISH} (no SRE condition) value which also include a well-defined spin Hall angle can be obtained via the linear response relation of ISHE and SRE components. - Highlights: • Hysteretic behavior of ferromagnetic resonance spectra in the CoFeB/Pt sample. • Hysteretic behavior of inverse-spin Hall effect voltage in the CoFeB/Pt sample. • Proportion of inverse spin-Hall effect voltage can be determined by the cavity mode. • The hysteretic behavior arise from the unsaturated magnetization limit. • The well-defined spin Hall angle which consider a hysteresis can be obtained.

Photo-modulation of the spin Hall conductivity of mono-layer transition metal dichalcogenides

Energy Technology Data Exchange (ETDEWEB)

Sengupta, Parijat; Bellotti, Enrico [Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215 (United States)

2016-05-23

We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the off-resonant condition) do not excite electrons but rearrange the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we compare the spin Hall conductivity of the higher spin-orbit coupled WSe{sub 2} to MoS{sub 2}; the spin Hall conductivity of WSe{sub 2} was found to be larger.

Spin pumping and inverse spin Hall effects in heavy metal/antiferromagnet/Permalloy trilayers

Science.gov (United States)

Saglam, Hilal; Zhang, Wei; Jungfleisch, M. Benjamin; Jiang, Wanjun; Pearson, John E.; Hoffmann, Axel

Recent work shows efficient spin transfer via spin waves in insulating antiferromagnets (AFMs), suggesting that AFMs can play a more active role in the manipulation of ferromagnets. We use spin pumping and inverse spin Hall effect experiments on heavy metal (Pt and W)/AFMs/Py (Ni80Fe20) trilayer structures, to examine the possible spin transfer phenomenon in metallic AFMs, i . e . , FeMn and PdMn. Previous work has studied electronic effects of the spin transport in these materials, yielding short spin diffusion length on the order of 1 nm. However, the work did not examine whether besides diffusive spin transport by the conduction electrons, there are additional spin transport contributions from spin wave excitations. We clearly observe spin transport from the Py spin reservoir to the heavy metal layer through the sandwiched AFMs with thicknesses well above the previously measured spin diffusion lengths, indicating that spin transport by spin waves may lead to non-negligible contributions This work was supported by US DOE, OS, Materials Sciences and Engineering Division. Lithographic patterning was carried out at the CNM, which is supported by DOE, OS under Contract No. DE-AC02-06CH11357.

Observation of the Spin Nernst Effect in Platinum

Science.gov (United States)

Goennenwein, Sebastian

Thermoelectric effects - arising from the interplay between thermal and charge transport phenomena - have been extensively studied and are considered well established. Upon taking into account the spin degree of freedom, however, qualitatively new phenomena arise. A prototype example for these so-called magneto-thermoelectric or spin-caloritronic effects is the spin Seebeck effect, in which a thermal gradient drives a pure spin current. In contrast to their thermoelectric counterparts, not all the spin-caloritronic effects predicted from theory have yet been observed in experiment. One of these `missing' phenomena is the spin Nernst effect, in which a thermal gradient gives rise to a transverse pure spin current. We have observed the spin Nernst effect in yttrium iron garnet/platinum (YIG/Pt) thin film bilayers. Upon applying a thermal gradient within the YIG/Pt bilayer plane, a pure spin current flows in the direction orthogonal to the thermal drive. We detect this spin current as a thermopower voltage, generated via magnetization-orientation dependent spin transfer into the adjacent YIG layer. Our data shows that the spin Nernst and the spin Hall effect in in Pt have different sign, but comparable magnitude, in agreement with first-principles calculations. Financial support via Deutsche Forschungsgemeinschaft Priority Programme SPP 1538 Spin-Caloric Transport is gratefully acknowledged.

Manipulating the voltage dependence of tunneling spin torques

KAUST Repository

Manchon, Aurelien

2012-01-01

Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact

Moments of nucleon spin-dependent generalized parton distributions

International Nuclear Information System (INIS)

Schroers, W.; Brower, R.C.; Dreher, P.; Edwards, R.; Fleming, G.; Haegler, Ph.; Heller, U.M.; Lippert, Th.; Negele, J.W.; Pochinsky, A.V.; Renner, D.B.; Richards, D.; Schilling, K.

2004-01-01

We present a lattice measurement of the first two moments of the spin-dependent GPD H∼(x, ξ, t). From these we obtain the axial coupling constant and the second moment of the spin-dependent forward parton distribution. The measurements are done in full QCD using Wilson fermions. In addition, we also present results from a first exploratory study of full QCD using Asqtad sea and domain-wall valence fermions

Crossover between spin swapping and Hall effect in disordered systems

KAUST Repository

Saidaoui, Hamed Ben Mohamed

2015-07-16

We theoretically study the crossover between spin Hall effect and spin swapping, a recently predicted phenomenon that consists of the interchange between the current flow and its spin polarization directions [M. B. Lifshits and M. I. Dyakonov, Phys. Rev. Lett. 103, 186601 (2009)]. Using a tight-binding model with spin-orbit coupled disorder, spin Hall effect, spin relaxation, and spin swapping are treated on equal footing. We demonstrate that spin swapping and spin Hall effect present very different dependencies as a function of the spin-orbit coupling and disorder strengths and confirm that the former exceeds the latter in the parameter range considered. Three setups are proposed for the experimental observation of the spin swapping effect.

Crossover between spin swapping and Hall effect in disordered systems

KAUST Repository

Saidaoui, Hamed Ben Mohamed; Otani, Y.; Manchon, Aurelien

2015-01-01

We theoretically study the crossover between spin Hall effect and spin swapping, a recently predicted phenomenon that consists of the interchange between the current flow and its spin polarization directions [M. B. Lifshits and M. I. Dyakonov, Phys. Rev. Lett. 103, 186601 (2009)]. Using a tight-binding model with spin-orbit coupled disorder, spin Hall effect, spin relaxation, and spin swapping are treated on equal footing. We demonstrate that spin swapping and spin Hall effect present very different dependencies as a function of the spin-orbit coupling and disorder strengths and confirm that the former exceeds the latter in the parameter range considered. Three setups are proposed for the experimental observation of the spin swapping effect.

Magnon and phonon dispersion, lifetime, and thermal conductivity of iron from spin-lattice dynamics simulations

Science.gov (United States)

Wu, Xufei; Liu, Zeyu; Luo, Tengfei

2018-02-01

In recent years, the fundamental physics of spin-lattice (e.g., magnon-phonon) interaction has attracted significant experimental and theoretical interests given its potential paradigm-shifting impacts in areas like spin-thermoelectrics, spin-caloritronics, and spintronics. Modelling studies of the transport of magnons and phonons in magnetic crystals are very rare. In this paper, we use spin-lattice dynamics (SLD) simulations to model ferromagnetic crystalline iron, where the spin and lattice systems are coupled through the atomic position-dependent exchange function, and thus the interaction between magnons and phonons is naturally considered. We then present a method combining SLD simulations with spectral energy analysis to calculate the magnon and phonon harmonic (e.g., dispersion, specific heat, and group velocity) and anharmonic (e.g., scattering rate) properties, based on which their thermal conductivity values are calculated. This work represents an example of using SLD simulations to understand the transport properties involving coupled magnon and phonon dynamics.

Spin-polarized light-emitting diodes based on organic bipolar spin valves

Science.gov (United States)

Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

2017-10-25

Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

Science.gov (United States)

Teng, Lihua; Jiang, Tianran; Wang, Xia; Lai, Tianshu

2018-05-01

Carrier recombination and electron spin relaxation dynamics in asymmetric n-doped (110) GaAs/AlGaAs quantum wells are investigated with time-resolved pump-probe spectroscopy. The experiment results reveal that the measured carrier recombination time depends strongly on the polarization of pump pulse. With the same pump photon flux densities, the recombination time of spin-polarized carriers is always longer than that of the spin-balanced carriers except at low pump photon flux densities, this anomaly originates from the polarization-sensitive nonlinear absorption effect. Differing from the traditional views, in the low carrier density regime, the D'yakonov-Perel' (DP) mechanism can be more important than the Bir-Aronov-Pikus (BAP) mechanism, since the DP mechanism takes effect, the spin relaxation time in (110) GaAs QWs is shortened obviously via asymmetric doping.

Observation of spin Hall effect in photon tunneling via weak measurements.

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-12-09

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications.

Observation of Spin Hall Effect in Photon Tunneling via Weak Measurements

Science.gov (United States)

Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

2014-01-01

Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications. PMID:25487043

Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

Science.gov (United States)

Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

2018-04-01

Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

Gate tunable spin transport in graphene with Rashba spin-orbit coupling

Science.gov (United States)

Tan, Xiao-Dong; Liao, Xiao-Ping; Sun, Litao

2016-10-01

Recently, it attracts much attention to study spin-resolved transport properties in graphene with Rashba spin-orbit coupling (RSOC). One remarkable finding is that Klein tunneling in single layer graphene (SLG) with RSOC (SLG + R for short below) behaves as in bi-layer graphene (BLG). Based on the effective Dirac theory, we reconsider this tunneling problem and derive the analytical solution for the transmission coefficients. Our result shows that Klein tunneling in SLG + R and BLG exhibits completely different behaviors. More importantly, we find two new transmission selection rules in SLG + R, i.e., the single band to single band (S → S) and the single band to multiple bands (S → M) transmission regimes, which strongly depend on the relative height among Fermi level, RSOC, and potential barrier. Interestingly, in the S → S transmission regime, only normally incident electrons have capacity to pass through the barrier, while in the S → M transmission regime the angle-dependent tunneling becomes very prominent. Using the transmission coefficients, we also derive spin-resolved conductance analytically, and conductance oscillation with the increasing barrier height and zero conductance gap are found in SLG + R. The present study offers new insights and opportunities for developing graphene-based spin devices.

Spin Hall Effect in Doped Semiconductor Structures

Science.gov (United States)

Tse, Wang-Kong; Das Sarma, Sankar

2006-03-01

We present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump (SJ) and skew-scattering (SS) contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show their effects scale as σxy^SJ/σxy^SS ˜(/τ)/ɛF, where τ being the transport relaxation time. Motivated by recent experimental work we apply our theory to n-doped and p-doped 3D and 2D GaAs structures, obtaining analytical formulas for the SJ and SS contributions. Moreover, the ratio of the spin Hall conductivity to longitudinal conductivity is found as σs/σc˜10-3-10-4, in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.

Signatures of spin-orbital states of t2g 2 system in optical conductivity: R VO3 (R =Y and La)

Science.gov (United States)

Kim, Minjae

2018-04-01

We investigate signatures of the spin and orbital states of R VO3 (R =Y and La) in optical conductivity using density functional theory plus dynamical mean-field theory (DFT+DMFT). From the assignment of multiplet state configurations to optical transitions, the DFT+DMFT reproduces experimental temperature-dependent evolutions of optical conductivity for both YVO3 and LaVO3. We also show that the optical conductivity is a useful quantity to probe the evolution of the orbital state even in the absence of spin order. The result provides a reference to investigate the spin and orbital states of t2g 2 vanadate systems, which is an important issue for both fundamental physics on spin and orbital states and applications of vanadates by means of orbital state control.

Spin-dependent quantum transport in nanoscaled geometries

Science.gov (United States)

Heremans, Jean J.

2011-10-01

We discuss experiments where the spin degree of freedom leads to quantum interference phenomena in the solid-state. Under spin-orbit interactions (SOI), spin rotation modifies weak-localization to weak anti-localization (WAL). WAL's sensitivity to spin- and phase coherence leads to its use in determining the spin coherence lengths Ls in materials, of importance moreover in spintronics. Using WAL we measure the dependence of Ls on the wire width w in narrow nanolithographic ballistic InSb wires, ballistic InAs wires, and diffusive Bi wires with surface states with Rashba-like SOI. In all three systems we find that Ls increases with decreasing w. While theory predicts the increase for diffusive wires with linear (Rashba) SOI, we experimentally conclude that the increase in Ls under dimensional confinement may be more universal, with consequences for various applications. Further, in mesoscopic ring geometries on an InAs/AlGaSb 2D electron system (2DES) we observe both Aharonov-Bohm oscillations due to spatial quantum interference, and Altshuler-Aronov-Spivak oscillations due to time-reversed paths. A transport formalism describing quantum coherent networks including ballistic transport and SOI allows a comparison of spin- and phase coherence lengths extracted for such spatial- and temporal-loop quantum interference phenomena. We further applied WAL to study the magnetic interactions between a 2DES at the surface of InAs and local magnetic moments on the surface from rare earth (RE) ions (Gd3+, Ho3+, and Sm3+). The magnetic spin-flip rate carries information about magnetic interactions. Results indicate that the heavy RE ions increase the SOI scattering rate and the spin-flip rate, the latter indicating magnetic interactions. Moreover Ho3+ on InAs yields a spin-flip rate with an unusual power 1/2 temperature dependence, possibly characteristic of a Kondo system. We acknowledge funding from DOE (DE-FG02-08ER46532).

Quantitative Temperature Dependence of Longitudinal Spin Seebeck Effect at High Temperatures

Directory of Open Access Journals (Sweden)

Ken-ichi Uchida

2014-11-01

Full Text Available We report temperature-dependent measurements of longitudinal spin Seebeck effects (LSSEs in Pt/Y_{3}Fe_{5}O_{12} (YIG/Pt systems in a high temperature range from room temperature to above the Curie temperature of YIG. The experimental results show that the magnitude of the LSSE voltage in the Pt/YIG/Pt systems rapidly decreases with increasing the temperature and disappears above the Curie temperature. The critical exponent of the LSSE voltage in the Pt/YIG/Pt systems at the Curie temperature is estimated to be 3, which is much greater than that for the magnetization curve of YIG. This difference highlights the fact that the mechanism of the LSSE cannot be explained in terms of simple static magnetic properties in YIG.

Spin dependent surface recombination in silicon p-n junctions: the effect of irradiation

Energy Technology Data Exchange (ETDEWEB)

Kaplan, D [Laboratoire Central de Recherches, 91 - Corbeville par Orsay (France); Pepper, M [Cambridge Univ. (UK). Cavendish Lab.

1980-06-01

The results are presented of an investigation of spin dependent recombination in (100) oriented, gate controlled Si diodes irradiated by 30 keV electrons. After irradiation, recombination at the Si-SiO/sub 2/ interface is increased, and saturation of the spin resonance increases the diode forward current by 5 parts in 10/sup 4/. The results cannot be described by a conventional Shockley-Read recombination model. An alternative picture is proposed involving recombination between trapped electrons and trapped holes.

Toward nonlinear magnonics: Intensity-dependent spin-wave switching in insulating side-coupled magnetic stripes

Science.gov (United States)

Sadovnikov, A. V.; Odintsov, S. A.; Beginin, E. N.; Sheshukova, S. E.; Sharaevskii, Yu. P.; Nikitov, S. A.

2017-10-01

We demonstrate that the nonlinear spin-wave transport in two laterally parallel magnetic stripes exhibit the intensity-dependent power exchange between the adjacent spin-wave channels. By the means of Brillouin light scattering technique, we investigate collective nonlinear spin-wave dynamics in the presence of magnetodipolar coupling. The nonlinear intensity-dependent effect reveals itself in the spin-wave mode transformation and differential nonlinear spin-wave phase shift in each adjacent magnetic stripe. The proposed analytical theory, based on the coupled Ginzburg-Landau equations, predicts the geometry design involving the reduction of power requirement to the all-magnonic switching. A very good agreement between calculation and experiment was found. In addition, a micromagnetic and finite-element approach has been independently used to study the nonlinear behavior of spin waves in adjacent stripes and the nonlinear transformation of spatial profiles of spin-wave modes. Our results show that the proposed spin-wave coupling mechanism provides the basis for nonlinear magnonic circuits and opens the perspectives for all-magnonic computing architecture.

Spin Current Noise of the Spin Seebeck Effect and Spin Pumping

Science.gov (United States)

Matsuo, M.; Ohnuma, Y.; Kato, T.; Maekawa, S.

2018-01-01

We theoretically investigate the fluctuation of a pure spin current induced by the spin Seebeck effect and spin pumping in a normal-metal-(NM-)ferromagnet(FM) bilayer system. Starting with a simple ferromagnet-insulator-(FI-)NM interface model with both spin-conserving and non-spin-conserving processes, we derive general expressions of the spin current and the spin-current noise at the interface within second-order perturbation of the FI-NM coupling strength, and estimate them for a yttrium-iron-garnet-platinum interface. We show that the spin-current noise can be used to determine the effective spin carried by a magnon modified by the non-spin-conserving process at the interface. In addition, we show that it provides information on the effective spin of a magnon, heating at the interface under spin pumping, and spin Hall angle of the NM.

Measuring spin-dependent structure functions at CEBAF

International Nuclear Information System (INIS)

Schaefer, A.

1994-01-01

The author analyses whether CEBAF with a 10 GeV beam could contribute significantly to the understanding of spin-dependent deep-inelastic scattering as well as semi-inclusive reactions. The main advantage of CEBAF is the much better attainable statistics, its great disadvantage its comparably low energy, which limits the accessible x-range to about 0.15 to 0.7. Within these constraints CEBAF could provide (1) high precision data which would be very valuable to understand the Q 2 dependence of the spin-dependent structure functions g 1 (x) and G 2 (x) and (2) the by far most precise determination of the third moments of g 1 (x) and g 2 (x) the latter of which the author argues to be related to a fundamental property of the nucleon

Analytical approaches to the determination of spin-dependent parton distribution functions at NNLO approximation

Science.gov (United States)

Salajegheh, Maral; Nejad, S. Mohammad Moosavi; Khanpour, Hamzeh; Tehrani, S. Atashbar

2018-05-01

In this paper, we present SMKA18 analysis, which is a first attempt to extract the set of next-to-next-leading-order (NNLO) spin-dependent parton distribution functions (spin-dependent PDFs) and their uncertainties determined through the Laplace transform technique and Jacobi polynomial approach. Using the Laplace transformations, we present an analytical solution for the spin-dependent Dokshitzer-Gribov-Lipatov-Altarelli-Parisi evolution equations at NNLO approximation. The results are extracted using a wide range of proton g1p(x ,Q2) , neutron g1n(x ,Q2) , and deuteron g1d(x ,Q2) spin-dependent structure functions data set including the most recent high-precision measurements from COMPASS16 experiments at CERN, which are playing an increasingly important role in global spin-dependent fits. The careful estimations of uncertainties have been done using the standard Hessian error propagation. We will compare our results with the available spin-dependent inclusive deep inelastic scattering data set and other results for the spin-dependent PDFs in literature. The results obtained for the spin-dependent PDFs as well as spin-dependent structure functions are clearly explained both in the small and large values of x .

Spin Hall effects

Science.gov (United States)

Sinova, Jairo; Valenzuela, Sergio O.; Wunderlich, J.; Back, C. H.; Jungwirth, T.

2015-10-01

Spin Hall effects are a collection of relativistic spin-orbit coupling phenomena in which electrical currents can generate transverse spin currents and vice versa. Despite being observed only a decade ago, these effects are already ubiquitous within spintronics, as standard spin-current generators and detectors. Here the theoretical and experimental results that have established this subfield of spintronics are reviewed. The focus is on the results that have converged to give us the current understanding of the phenomena, which has evolved from a qualitative to a more quantitative measurement of spin currents and their associated spin accumulation. Within the experimental framework, optical-, transport-, and magnetization-dynamics-based measurements are reviewed and linked to both phenomenological and microscopic theories of the effect. Within the theoretical framework, the basic mechanisms in both the extrinsic and intrinsic regimes are reviewed, which are linked to the mechanisms present in their closely related phenomenon in ferromagnets, the anomalous Hall effect. Also reviewed is the connection to the phenomenological treatment based on spin-diffusion equations applicable to certain regimes, as well as the spin-pumping theory of spin generation used in many measurements of the spin Hall angle. A further connection to the spin-current-generating spin Hall effect to the inverse spin galvanic effect is given, in which an electrical current induces a nonequilibrium spin polarization. This effect often accompanies the spin Hall effect since they share common microscopic origins. Both can exhibit the same symmetries when present in structures comprising ferromagnetic and nonmagnetic layers through their induced current-driven spin torques or induced voltages. Although a short chronological overview of the evolution of the spin Hall effect field and the resolution of some early controversies is given, the main body of this review is structured from a pedagogical

Spin-dependent potentials from lattice QCD

International Nuclear Information System (INIS)

Koma, Y.

2006-09-01

The spin-dependent corrections to the static inter-quark potential are phenomenologically relevant to describing the fine and hyperfine spin splitting of the heavy quarkonium spectra. We investigate these corrections, which are represented as the field strength correlators on the quark-antiquark source, in SU(3) lattice gauge theory. We use the Polyakov loop correlation function as the quark-antiquark source, and by employing the multi-level algorithm, we obtain remarkably clean signals for these corrections up to intermediate distances of around 0.6 fm. Our observation suggests several new features of the corrections. (orig.)

Effects of the electron-electron interaction in the spin resonance in 2D systems with Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Krishtopenko, S. S.

2015-01-01

The effect of the electron-electron interaction on the spin-resonance frequency in two-dimensional electron systems with Dresselhaus spin-orbit coupling is investigated. The oscillatory dependence of many-body corrections on the magnetic field is demonstrated. It is shown that the consideration of many-body interaction leads to a decrease or an increase in the spin-resonance frequency, depending on the sign of the g factor. It is found that the term cubic in quasimomentum in Dresselhaus spin-orbit coupling partially decreases exchange corrections to the spin resonance energy in a two-dimensional system

Effects of the electron-electron interaction in the spin resonance in 2D systems with Dresselhaus spin-orbit coupling

Energy Technology Data Exchange (ETDEWEB)

Krishtopenko, S. S., E-mail: sergey.krishtopenko@mail.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2015-02-15

The effect of the electron-electron interaction on the spin-resonance frequency in two-dimensional electron systems with Dresselhaus spin-orbit coupling is investigated. The oscillatory dependence of many-body corrections on the magnetic field is demonstrated. It is shown that the consideration of many-body interaction leads to a decrease or an increase in the spin-resonance frequency, depending on the sign of the g factor. It is found that the term cubic in quasimomentum in Dresselhaus spin-orbit coupling partially decreases exchange corrections to the spin resonance energy in a two-dimensional system.

Spin-dependent transport and functional design in organic ferromagnetic devices

Directory of Open Access Journals (Sweden)

Guichao Hu

2017-09-01

Full Text Available Organic ferromagnets are intriguing materials in that they combine ferromagnetic and organic properties. Although challenges in their synthesis still remain, the development of organic spintronics has triggered strong interest in high-performance organic ferromagnetic devices. This review first introduces our theory for spin-dependent electron transport through organic ferromagnetic devices, which combines an extended Su–Schrieffer–Heeger model with the Green’s function method. The effects of the intrinsic interactions in the organic ferromagnets, including strong electron–lattice interaction and spin–spin correlation between π-electrons and radicals, are highlighted. Several interesting functional designs of organic ferromagnetic devices are discussed, specifically the concepts of a spin filter, multi-state magnetoresistance, and spin-current rectification. The mechanism of each phenomenon is explained by transmission and orbital analysis. These works show that organic ferromagnets are promising components for spintronic devices that deserve to be designed and examined in future experiments.

Spin dependence in the neutralization of He+ ions in metals: An analysis of different contributions

International Nuclear Information System (INIS)

Alducin, M.

2005-01-01

We study the spin polarization of the Auger electrons produced during the neutralization of He + ions in a free electron gas. In this process, one metal electron decays to the unoccupied state and a second electron is promoted to a continuum excited state. Although the spin of the decaying electron is fixed, both spins are allowed for the excited one. The states of the electrons involved in this Auger capture process are described by the spin-dependent Kohn-Sham orbitals obtained from density functional theory and the local spin approximation. The Auger capture rates indicate a strong polarization of the excited electron. In a paramagnetic free electron gas, there are two mechanisms accounting for this effect, the spin-dependent screening and the interference between indistinguishable processes when the involved electrons are in the same spin state. In a spin-polarized medium, the difference in the density of spin-up and spin-down electrons is a new ingredient to be considered. As a result, the excited electrons preferably come from the majority band, even in the case of He + ions with spin opposite to that of the majority band embedded in a low spin-polarized free electron gas

Anisotropic intrinsic spin Hall effect in quantum wires

International Nuclear Information System (INIS)

Cummings, A W; Akis, R; Ferry, D K

2011-01-01

We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the relative strengths of the Rashba and Dresselhaus spin-orbit couplings. In particular, at low densities, when only one subband of the quantum wire is occupied, the spin Hall effect is strongest for electron momentum along the [1-bar 10] axis, which is the opposite of what is expected for the purely 2D case. In addition, when more than one subband is occupied, the strength and anisotropy of the spin Hall effect can vary greatly over relatively small changes in electron density, which makes it difficult to predict which wire orientation will maximize the strength of the spin Hall effect. These results help to illuminate the role of quantum confinement in spin-orbit-coupled systems, and can serve as a guide for future experimental work on the use of quantum wires for spin-Hall-based spintronic applications. (paper)

Large spin-valve effect in a lateral spin-valve device based on ferromagnetic semiconductor GaMnAs

Science.gov (United States)

Asahara, Hirokatsu; Kanaki, Toshiki; Ohya, Shinobu; Tanaka, Masaaki

2018-03-01

We investigate the spin-dependent transport properties of a lateral spin-valve device based on the ferromagnetic semiconductor GaMnAs. This device is composed of a GaMnAs channel layer grown on GaAs with a narrow trench across the channel. Its current-voltage characteristics show tunneling behavior. Large magnetoresistance (MR) ratios of more than ˜10% are obtained. These values are much larger than those (˜0.1%) reported for lateral-type spin metal-oxide-semiconductor field-effect transistors. The magnetic field direction dependence of the MR curve differs from that of the anisotropic magnetoresistance of GaMnAs, which confirms that the MR signal originates from the spin-valve effect between the GaMnAs electrodes.

High spin-filter efficiency and Seebeck effect through spin-crossover iron–benzene complex

Energy Technology Data Exchange (ETDEWEB)

Yan, Qiang; Zhou, Liping, E-mail: zhoulp@suda.edu.cn; Cheng, Jue-Fei; Wen, Zhongqian; Han, Qin; Wang, Xue-Feng [College of Physics, Optoelectronics and Energy and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006 (China)

2016-04-21

Electronic structures and coherent quantum transport properties are explored for spin-crossover molecule iron-benzene Fe(Bz){sub 2} using density functional theory combined with non-equilibrium Green’s function. High- and low-spin states are investigated for two different lead-molecule junctions. It is found that the asymmetrical T-shaped contact junction in the high-spin state behaves as an efficient spin filter while it has a smaller conductivity than that in the low-spin state. Large spin Seebeck effect is also observed in asymmetrical T-shaped junction. Spin-polarized properties are absent in the symmetrical H-shaped junction. These findings strongly suggest that both the electronic and contact configurations play significant roles in molecular devices and metal-benzene complexes are promising materials for spintronics and thermo-spintronics.

Measurement of the spin dependent structure functions of proton and neutron

International Nuclear Information System (INIS)

Rith, K.

1989-01-01

Recent results from the EMC experiment on the spin dependent structure function g 1 p (x) of the proton are discussed. They suggest that the nucleon spin does not originate from quark spins but rather from angular orbital momentum and gluon contributions. A proposed experiment at HERA is presented which will allow a very accurate measurement of the spin dependent structure functions and their integrals of both proton and neutron and a precise test of the Bjorken sum rule. (orig.)

Nuclear spin content and constraints on exotic spin-dependent couplings

International Nuclear Information System (INIS)

Kimball, D F Jackson

2015-01-01

There are numerous recent and ongoing experiments employing a variety of atomic species to search for couplings of atomic spins to exotic fields. In order to meaningfully compare these experimental results, the coupling of the exotic field to the atomic spin must be interpreted in terms of the coupling to electron, proton, and neutron spins. Traditionally, constraints from atomic experiments on exotic couplings to neutron and proton spins have been derived using the single-particle Schmidt model for nuclear spin. In this model, particular atomic species are sensitive to either neutron or proton spin couplings, but not both. More recently, semi-empirical models employing nuclear magnetic moment data have been used to derive new constraints for non-valence nucleons. However, comparison of such semi-empirical models to detailed large-scale nuclear shell model calculations and analysis of known physical effects in nuclei show that existing semi-empirical models cannot reliably be used to predict the spin polarization of non-valence nucleons. The results of our re-analysis of nuclear spin content are applied to searches for exotic long-range monopole–dipole and dipole–dipole couplings of nuclei leading to significant revisions of some published constraints. (paper)

High spin effects in superdense matter

International Nuclear Information System (INIS)

Bowers, R.L.; Gleeson, A.M.; Pedigo, R.D.

1978-04-01

A model of relativistic interacting superdense matter with vector, scalar and symmetric second rank tensor exchange is developed. The Green's functions of the model are solved in the self consistent Hartree approximation. The contributions of the symmetric second rank tensor are emphasized. It is found that these high spin contributions effect the superdense matter at densities just beyond those predicted to occur in neutron star matter or nuclear collisions. The spin-two effects do produce an unusual asymptotic dependence, p = - 1 / 3 epsilon. This effect is examined in a simple model of the early universe

Monte Carlo determination of the spin-dependent potentials

International Nuclear Information System (INIS)

Campostrini, M.; Moriarty, K.J.M.; Rebbi, C.

1987-05-01

Calculation of the bound states of heavy quark systems by a Hamiltonian formulation based on an expansion of the interaction into inverse powers of the quark mass is discussed. The potentials for the spin-orbit and spin-spin coupling between quark and antiquark, which are responsible for the fine and hyperfine splittings in heavy quark spectroscopy, are expressed as expectation values of Wilson loop factors with suitable insertions of chromomagnetic or chromoelectric fields. A Monte Carlo simulation has been used to evaluate the expectation values and, from them, the spin-dependent potentials. The Monte Carlo calculation is reported to show a long-range, non-perturbative component in the interaction

Lock-in thermography measurements of the spin Peltier effect in a compensated ferrimagnet and its comparison to the spin Seebeck effect

Science.gov (United States)

Yagmur, A.; Iguchi, R.; Geprägs, S.; Erb, A.; Daimon, S.; Saitoh, E.; Gross, R.; Uchida, K.

2018-05-01

The spin Peltier effect (SPE) in a junction comprising a gadolinium-iron-garnet (GdIG) slab and a Pt film has been investigated around the magnetization compensation temperature of GdIG by means of the lock-in thermography method. When a charge current is applied to the Pt layer, a spin current is generated across the Pt/GdIG interface via the spin Hall effect in Pt. This spin current induces a heat current and a measurable temperature change near the Pt/GdIG interface due to the SPE. The SPE signal in the Pt/GdIG junction shows a sign change around the magnetization compensation temperature, demonstrating the similar temperature dependence of the SPE and the spin Seebeck effect for the Pt/GdIG hybrid system.

Measuring spin-dependent structure functions at CEBAF

Energy Technology Data Exchange (ETDEWEB)

Schaefer, A. [Universitaet Frankfurt (Germany)

1994-04-01

The author analyses whether CEBAF with a 10 GeV beam could contribute significantly to the understanding of spin-dependent deep-inelastic scattering as well as semi-inclusive reactions. The main advantage of CEBAF is the much better attainable statistics, its great disadvantage its comparably low energy, which limits the accessible x-range to about 0.15 to 0.7. Within these constraints CEBAF could provide (1) high precision data which would be very valuable to understand the Q{sup 2} dependence of the spin-dependent structure functions g{sub 1}(x) and G{sub 2}(x) and (2) the by far most precise determination of the third moments of g{sub 1}(x) and g{sub 2}(x) the latter of which the author argues to be related to a fundamental property of the nucleon.

Constraints on Exotic Spin-Dependent Interactions Between Matter and Antimatter from Antiprotonic Helium Spectroscopy

Science.gov (United States)

Ficek, Filip; Fadeev, Pavel; Flambaum, Victor V.; Jackson Kimball, Derek F.; Kozlov, Mikhail G.; Stadnik, Yevgeny V.; Budker, Dmitry

2018-05-01

Heretofore undiscovered spin-0 or spin-1 bosons can mediate exotic spin-dependent interactions between standard model particles. Here, we carry out the first search for semileptonic spin-dependent interactions between matter and antimatter. We compare theoretical calculations and spectroscopic measurements of the hyperfine structure of antiprotonic helium to constrain exotic spin- and velocity-dependent interactions between electrons and antiprotons.

The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

International Nuclear Information System (INIS)

Zhao Jun-Qing; Ding Meng; Zhang Tian-You; Zhang Ning-Yu; Pang Yan-Tao; Ji Yan-Ju; Chen Ying; Wang Feng-Xiang; Fu Gang

2012-01-01

We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current. The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron—hole pairs, and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field. The field dependence, the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron—hole pairs. The simulated magnetoresistance shows good consistency with the experimental results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Spin-dependent tunneling recombination in heterostructures with a magnetic layer

Energy Technology Data Exchange (ETDEWEB)

Denisov, K. S., E-mail: denisokonstantin@gmail.com; Rozhansky, I. V.; Averkiev, N. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lähderanta, E. [Lappeenranta University of Technology (Finland)

2017-01-15

We propose a mechanism for the generation of spin polarization in semiconductor heterostructures with a quantum well and a magnetic impurity layer spatially separated from it. The spin polarization of carriers in a quantum well originates from spin-dependent tunneling recombination at impurity states in the magnetic layer, which is accompanied by a fast linear increase in the degree of circular polarization of photoluminescence from the quantum well. Two situations are theoretically considered. In the first case, resonant tunneling to the spin-split sublevels of the impurity center occurs and spin polarization is caused by different populations of resonance levels in the quantum well for opposite spin projections. In the second, nonresonant case, the spin-split impurity level lies above the occupied states of electrons in the quantum well and plays the role of an intermediate state in the two-stage coherent spin-dependent recombination of an electron from the quantum well and a hole in the impurity layer. The developed theory allows us to explain both qualitatively and quantitatively the kinetics of photoexcited electrons in experiments with photoluminescence with time resolution in Mn-doped InGaAs heterostructures.

Proximity Effect Induced Spin Injection in Phosphorene on Magnetic Insulator.

Science.gov (United States)

Chen, Haoqi; Li, Bin; Yang, Jinlong

2017-11-08

Black phosphorus is a promising candidate for future nanoelectronics with a moderate electronic band gap and a high carrier mobility. Introducing the magnetism into black phosphorus will widely expand its application scope and may present a bright prospect in spintronic nanodevices. Here, we report our first-principles calculations of spin-polarized electronic structure of monolayer black phosphorus (phosphorene) adsorbed on a magnetic europium oxide (EuO) substrate. Effective spin injection into the phosphorene is realized by means of interaction with the nearby EuO(111) surface, i.e., proximity effect, which results in spin-polarized electrons in the 3p orbitals of phosphorene, with the spin polarization at Fermi level beyond 30%, together with an exchange-splitting energy of ∼0.184 eV for conduction-band minimum of the adsorbed phosphorene corresponding to an energy region where only one spin channel is conductive. The energy region of these exchange-splitting and spin-polarized band gaps of the adsorbed phosphorene can be effectively modulated by in-plane strain. Intrinsically high and anisotropic carrier mobilities at the conduction-band minimum of the phosphorene also become spin-polarized mainly due to spin polarization of deformation potentials and are not depressed significantly after the adsorption. These extraordinary properties would endow black phosphorus with great potentials in the future spintronic nanodevices.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien

2012-08-09

Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque, as well as a nonconventional thickness dependence of both spin torque components.

Higher order spin-dependent terms in D0-brane scattering from the matrix model

International Nuclear Information System (INIS)

McArthur, I.N.

1998-01-01

The potential describing long-range interactions between D0-branes contains spin-dependent terms. In the matrix model, these should be reproduced by the one-loop effective action computed in the presence of a non-trivial fermionic background ψ. The v 3 ψ 2 /r 8 term in the effective action has been computed by Kraus and shown to correspond to a spin-orbit interaction between D0-branes, and the ψ 8 /r 11 term in the static potential has been obtained by Barrio et al. In this paper, the v 2 ψ 4 /r 9 term is computing in the matrix model and compared with the corresponding results of Morales et al. obtained using string theoretic methods. The technique employed is adapted to the underlying supersymmetry of the matrix model, and should be useful in the calculation of spin-dependent effects in more general Dp-brane scatterings. (orig.)

Conductance of a quantum ring with spin-orbit interaction in the presence of an impurity

International Nuclear Information System (INIS)

Kovalev, V. M.; Chaplik, A. V.

2006-01-01

The conductance of a quantum ring has been calculated on the basis of the tunneling Hamiltonian in the quasiballistic regime of the motion of electrons with allowance for the spin-orbit interaction. The effect of the scattering of electrons by a single short-range interacting impurity in the quantum ring on the tunneling electron current is analyzed. Two types of impurities, spinless and paramagnetic, are considered. The conductance symmetry is discussed for various electron-spin orientations with respect to change in the sign of the magnetic flux through the quantum ring

Vibration dependence of the tensor spin-spin and scalar spin-spin hyperfine interactions by precision measurement of hyperfine structures of 127I2 near 532 nm

International Nuclear Information System (INIS)

Hong Fenglei; Zhang Yun; Ishikawa, Jun; Onae, Atsushi; Matsumoto, Hirokazu

2002-01-01

Hyperfine structures of the R(87)33-0, R(145)37-0, and P(132)36-0 transitions of molecular iodine near 532 nm are measured by observing the heterodyne beat-note signal of two I 2 -stabilized lasers, whose frequencies are bridged by an optical frequency comb generator. The measured hyperfine splittings are fit to a four-term Hamiltonian, which includes the electric quadrupole, spin-rotation, tensor spin-spin, and scalar spin-spin interactions, with an accuracy of ∼720 Hz. High-accurate hyperfine constants are obtained from this fit. Vibration dependences of the tensor spin-spin and scalar spin-spin hyperfine constants are determined for molecular iodine, for the first time to our knowledge. The observed hyperfine transitions are good optical frequency references in the 532-nm region

Spin-accumulation effect in magnetic nano-bridge

International Nuclear Information System (INIS)

Khvalkovskii, A.V.; Zvezdin, A.A.; Zvezdin, K.A.; Pullini, D.; Perlo, P.

2004-01-01

Large values of magnetoresistance experimentally observed in magnetic nano-contacts and nano-wires are explained in terms of spin accumulation. The investigation of the spin-accumulation effect in magnetic nano-contacts (Phys. Rev. Lett. 82 (1999) 2923) and nano-bridges (JETP Lett. 75 (10) (2002) 613), which are considered to be very promising for various spintronic applications, is presented. The two-dimensional spin-diffusion problem in a magnetic nano-bridge is solved. Dependences of the specific resistance of the domain wall and of the distribution of non-equilibrium spin density on the nano-bridge geometry and the material parameters are obtained

Laser-assisted spin-polarized transport in graphene tunnel junctions

International Nuclear Information System (INIS)

Ding Kaihe; Zhu Zhengang; Berakdar, Jamal

2012-01-01

The Keldysh nonequilibrium Green’s function method is utilized to theoretically study spin-polarized transport through a graphene spin valve irradiated by a monochromatic laser field. It is found that the bias dependence of the differential conductance exhibits successive peaks corresponding to the resonant tunneling through the photon-assisted sidebands. The multi-photon processes originate from the combined effects of the radiation field and the graphene tunneling properties, and are shown to be substantially suppressed in a graphene spin valve which results in a decrease of the differential conductance for a high bias voltage. We also discuss the appearance of a dynamical gap around zero bias due to the radiation field. The gap width can be tuned by changing the radiation electric field strength and the frequency. This leads to a shift of the resonant peaks in the differential conductance. We also demonstrate numerically the dependences of the radiation and spin valve effects on the parameters of the external fields and those of the electrodes. We find that the combined effects of the radiation field, the graphene and the spin valve properties bring about an oscillatory behavior in the tunnel magnetoresistance, and this oscillatory amplitude can be changed by scanning the radiation field strength and/or the frequency. (paper)

Microscopic studies of nonlocal spin dynamics and spin transport (invited)

Energy Technology Data Exchange (ETDEWEB)

Adur, Rohan; Du, Chunhui; Cardellino, Jeremy; Scozzaro, Nicolas; Wolfe, Christopher S.; Wang, Hailong; Herman, Michael; Bhallamudi, Vidya P.; Pelekhov, Denis V.; Yang, Fengyuan; Hammel, P. Chris, E-mail: hammel@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

2015-05-07

Understanding the behavior of spins coupling across interfaces in the study of spin current generation and transport is a fundamental challenge that is important for spintronics applications. The transfer of spin angular momentum from a ferromagnet into an adjacent normal material as a consequence of the precession of the magnetization of the ferromagnet is a process known as spin pumping. We find that, in certain circumstances, the insertion of an intervening normal metal can enhance spin pumping between an excited ferromagnetic magnetization and a normal metal layer as a consequence of improved spin conductance matching. We have studied this using inverse spin Hall effect and enhanced damping measurements. Scanned probe magnetic resonance techniques are a complementary tool in this context offering high resolution magnetic resonance imaging, localized spin excitation, and direct measurement of spin lifetimes or damping. Localized magnetic resonance studies of size-dependent spin dynamics in the absence of lithographic confinement in both ferromagnets and paramagnets reveal the close relationship between spin transport and spin lifetime at microscopic length scales. Finally, detection of ferromagnetic resonance of a ferromagnetic film using the photoluminescence of nitrogen vacancy spins in neighboring nanodiamonds demonstrates long-range spin transport between insulating materials, indicating the complexity and generality of spin transport in diverse, spatially separated, material systems.

Microscopic studies of nonlocal spin dynamics and spin transport (invited)

Science.gov (United States)

Adur, Rohan; Du, Chunhui; Cardellino, Jeremy; Scozzaro, Nicolas; Wolfe, Christopher S.; Wang, Hailong; Herman, Michael; Bhallamudi, Vidya P.; Pelekhov, Denis V.; Yang, Fengyuan; Hammel, P. Chris

2015-05-01

Understanding the behavior of spins coupling across interfaces in the study of spin current generation and transport is a fundamental challenge that is important for spintronics applications. The transfer of spin angular momentum from a ferromagnet into an adjacent normal material as a consequence of the precession of the magnetization of the ferromagnet is a process known as spin pumping. We find that, in certain circumstances, the insertion of an intervening normal metal can enhance spin pumping between an excited ferromagnetic magnetization and a normal metal layer as a consequence of improved spin conductance matching. We have studied this using inverse spin Hall effect and enhanced damping measurements. Scanned probe magnetic resonance techniques are a complementary tool in this context offering high resolution magnetic resonance imaging, localized spin excitation, and direct measurement of spin lifetimes or damping. Localized magnetic resonance studies of size-dependent spin dynamics in the absence of lithographic confinement in both ferromagnets and paramagnets reveal the close relationship between spin transport and spin lifetime at microscopic length scales. Finally, detection of ferromagnetic resonance of a ferromagnetic film using the photoluminescence of nitrogen vacancy spins in neighboring nanodiamonds demonstrates long-range spin transport between insulating materials, indicating the complexity and generality of spin transport in diverse, spatially separated, material systems.

Microscopic studies of nonlocal spin dynamics and spin transport (invited)

International Nuclear Information System (INIS)

Adur, Rohan; Du, Chunhui; Cardellino, Jeremy; Scozzaro, Nicolas; Wolfe, Christopher S.; Wang, Hailong; Herman, Michael; Bhallamudi, Vidya P.; Pelekhov, Denis V.; Yang, Fengyuan; Hammel, P. Chris

2015-01-01

Understanding the behavior of spins coupling across interfaces in the study of spin current generation and transport is a fundamental challenge that is important for spintronics applications. The transfer of spin angular momentum from a ferromagnet into an adjacent normal material as a consequence of the precession of the magnetization of the ferromagnet is a process known as spin pumping. We find that, in certain circumstances, the insertion of an intervening normal metal can enhance spin pumping between an excited ferromagnetic magnetization and a normal metal layer as a consequence of improved spin conductance matching. We have studied this using inverse spin Hall effect and enhanced damping measurements. Scanned probe magnetic resonance techniques are a complementary tool in this context offering high resolution magnetic resonance imaging, localized spin excitation, and direct measurement of spin lifetimes or damping. Localized magnetic resonance studies of size-dependent spin dynamics in the absence of lithographic confinement in both ferromagnets and paramagnets reveal the close relationship between spin transport and spin lifetime at microscopic length scales. Finally, detection of ferromagnetic resonance of a ferromagnetic film using the photoluminescence of nitrogen vacancy spins in neighboring nanodiamonds demonstrates long-range spin transport between insulating materials, indicating the complexity and generality of spin transport in diverse, spatially separated, material systems

Tunneling Conductance in Ferromagnetic Metal/Normal Metal/Spin-Singlet -Wave Ferromagnetic Superconductor Junctions

Directory of Open Access Journals (Sweden)

Hamidreza Emamipour

2013-01-01

Full Text Available In the framework of scattering theory, we study the tunneling conductance in a system including two junctions, ferromagnetic metal/normal metal/ferromagnetic superconductor, where ferromagnetic superconductor is in spin-singlet -wave pairing state. The non-magnetic normal metal is placed in the intermediate layer with the thickness ( which varies from 1 nm to 10000 nm. The interesting result which we have found is the existence of oscillations in conductance curves. The period of oscillations is independent of FS and FN exchange field while it depends on . The obtained results can serve as a useful tool to determine the kind of pairing symmetry in ferromagnetic superconductors.

Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

Science.gov (United States)

Wan, J.; Cahay, M.; Bandyopadhyay, S.

2008-06-01

We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.

Magnetic reconstruction induced magnetoelectric coupling and spin-dependent tunneling in Ni/KNbO_3/Ni multiferroic tunnel junctions

International Nuclear Information System (INIS)

Zhang, Hu; Dai, Jian-Qing; Song, Yu-Min

2016-01-01

We investigate the magnetoelectric coupling and spin-polarized tunneling in Ni/KNbO_3/Ni multiferroic tunnel junctions with asymmetric interfaces based on density functional theory. The junctions have two stable polarization states. We predict a peculiar magnetoelectric effect in such junctions originating from the magnetic reconstruction of Ni near the KO-terminated interface. This reconstruction is induced by the reversal of the ferroelectric polarization of KNbO_3. Furthermore, the change in the magnetic ordering filters the spin-dependent current. This effect leads to a change in conductance by about two orders of magnitude. As a result we obtain a giant tunneling electroresistance effect. In addition, there exist sizable tunneling magnetoresistance effects for two polarization states. - Highlights: • We study the ME coupling and electron tunneling in Ni/KNbO_3/Ni junctions. • There is magnetic reconstruction of Ni atoms near the KO-terminated interface. • A peculiar magnetoelectric coupling effect is obtained. • Predicted giant tunneling electroresistance effects.

Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

Energy Technology Data Exchange (ETDEWEB)

Li, Yuan, E-mail: liyuan12@semi.ac.cn; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai, E-mail: yhchen@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China); Niu, Zhichuan; Xiang, Wei; Hao, Hongyue [The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)

2015-05-11

In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed.

Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

International Nuclear Information System (INIS)

Li, Yuan; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai; Niu, Zhichuan; Xiang, Wei; Hao, Hongyue

2015-01-01

In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed

Static spin-dependent forces between heavy quarks in the classical approximation to dual QCD

International Nuclear Information System (INIS)

Baker, M.; Ball, J.S.; Zachariasen, F.

1991-01-01

We compute the static spin-dependent forces V S (R) (proportional to σ 1 ·σ 2 ) and V T (R) (proportional to 3σ 1 ·Rσ 2 ·R-σ 1 ·σ 2 ) between two quarks separated by R. This is done by treating the (weak) spin-dependent effects as a perturbation on the spin-independent potentials and fields computed earlier for dual QCD. What results is a definite prediction for the heavy-quark potentials which are similar to, but different in form from, those used in phenomenological treatments. Calculations of the masses and splittings of heavy-quark states using our potentials will provide a further test of the dual superconductor picture of QCD

Large current modulation and spin-dependent tunneling of vertical graphene/MoS2 heterostructures.

Science.gov (United States)

Myoung, Nojoon; Seo, Kyungchul; Lee, Seung Joo; Ihm, G

2013-08-27

Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.

Out-of-plane spin-orientation dependent magnetotransport properties in the anisotropic helimagnet CR1/3NbS2 [Spin-Orbit Coupling Induced Anisotropy in the Magnetotransport of the Chiral Helimagnet Cr1=3NbS2

International Nuclear Information System (INIS)

Bornstein, Alexander C.; Chapman, Benjamin J.; Ghimire, Nirmal J.; Oak Ridge National Lab.; Technology Div.); Mandrus, David G.; Oak Ridge National Lab.; Technology Div.); Parker, David S.; Technology Div.); Lee, Minhyea

2015-01-01

Understanding the role of spin-orbit coupling (SOC) has been crucial for controlling magnetic anisotropy in magnetic multilayer films. It has been shown that electronic structure can be altered via interface SOC by varying the superlattice structure, resulting in spontaneous magnetization perpendicular or parallel to the plane. In lieu of magnetic thin films, we study the similarly anisotropic helimagnet Cr1/3NbS2 where the spin-polarization direction, controlled by the applied magnetic field, can modify the electronic structure. As a result, the direction of spin polarization can modulate the density of states and in turn affect the in-plane electrical conductivity. In Cr1/3NbS2, we found an enhancement of in-plane conductivity when the spin polarization is out-of-plane as compared to in-plane spin polarization. This is consistent with the increase in density of states near the Fermi energy at the same spin configuration, found from first-principles calculations. We also observe unusual field dependence of the Hall signal in the same temperature range. This is unlikely to originate from the noncollinear spin texture but rather further indicates strong dependence of electronic structure on spin orientation relative to the plane

The spin-dependent neutralino-nucleus form factor for 127I

International Nuclear Information System (INIS)

Ressell, M.T.

1996-01-01

We present the results of detailed shell model calculations of the spin-dependent elastic form factor for the nucleus 127 I. the calculations were performed in extremely large model spaces which adequately describe the configuration mixing in this nucleus. Good agreement between the calculated and experimental values of the magnetic moment are found. Other nuclear observables are also compared to experiment. The dependence of the form factor upon the model space and effective interaction is discussed

Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

Science.gov (United States)

Burton, J D; Tsymbal, E Y

2011-04-15

A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between the ferroelectric barrier and a magnetic La(1-x)Sr(x)MnO3 electrode. Using first-principles density-functional theory we demonstrate that a few magnetic monolayers of La(1-x)Sr(x)MnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic-scale spin valve by filtering spin-dependent current. This produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

Boosting spin-caloritronic effects by attractive correlations in molecular junctions.

Science.gov (United States)

Weymann, Ireneusz

2016-01-25

In nanoscopic systems quantum confinement and interference can lead to an enhancement of thermoelectric properties as compared to conventional bulk materials. For nanostructures, such as molecules or quantum dots coupled to external leads, the thermoelectric figure of merit can reach or even exceed unity. Moreover, in the presence of external magnetic field or when the leads are ferromagnetic, an applied temperature gradient can generate a spin voltage and an associated spin current flow in the system, which makes such nanostructures particularly interesting for future thermoelectric applications. In this study, by using the numerical renormalization group method, we examine the spin-dependent thermoelectric transport properties of a molecular junction involving an orbital level with attractive Coulomb correlations coupled to ferromagnetic leads. We analyze how attractive correlations affect the spin-resolved transport properties of the system and find a nontrivial dependence of the conductance and tunnel magnetoresistance on the strength and sign of those correlations. We also demonstrate that attractive correlations can lead to an enhancement of the spin thermopower and the figure of merit, which can be controlled by a gate voltage.

Hysteresis loops of spin-dependent electronic current in a paramagnetic resonant tunnelling diode

International Nuclear Information System (INIS)

Wójcik, P; Spisak, B J; Wołoszyn, M; Adamowski, J

2012-01-01

Nonlinear properties of the spin-dependent electronic transport through a semiconductor resonant tunnelling diode with a paramagnetic quantum well are considered. The spin-dependent Wigner–Poisson model of the electronic transport and the two-current Mott’s formula for the independent spin channels are applied to determine the current–voltage curves of the nanodevice. Two types of the electronic current hysteresis loops are found in the current–voltage characteristics for both the spin components of the electronic current. The physical interpretation of these two types of the electronic current hysteresis loops is given based on the analysis of the spin-dependent electron densities and the potential energy profiles. The differences between the current–voltage characteristics for both the spin components of the electronic current allow us to explore the changes of the spin polarization of the current for different electric fields and determine the influence of the electronic current hysteresis on the spin polarization of the current flowing through the paramagnetic resonant tunnelling diode. (paper)

On the properties of nuclear matter with an excess of neutrons, spin-up neutrons and spin-up protons using effective nucleon-nucleon potential

International Nuclear Information System (INIS)

Hassan, M.Y.; Ramadan, S.

1978-01-01

The binding energy of nuclear matter with an excess of neutrons, with spin-up neutrons and spin-up protons (characterized by the corresponding parameters αsub(tau)=(N-Z)/A, αsub(n)=(N(up)-N(down))/A, and αsub(p)=(Z(up)-Z(down))/A) contains three symmetry energies: the isospin symmetry energy epsilon sub(tau), the spin symmetry energy epsilon sub(sigma) and the spin-isospin symmetry energy epsilon sub(sigma tau). These energies are calculated using velocity-dependent effective potential of s-wave interaction, which was developed by Dzhibuti and Mamasakhlisov. The spin, isospin and spin-isospin dependent parts of the single-particle potential in nuclear matter are also calculated using the same effective nucleon-nucleon potentials. The spin-spin part of the optical model potential is estimated. (author)

Sum rule measurements of the spin-dependent compton amplitude (nucleon spin structure at Q2 = 0)

International Nuclear Information System (INIS)

Babusci, D.; Giordano, G.; Baghaei, H.; Cichocki, A.; Blecher, M.; Breuer, M.; Commeaux, C.; Didelez, J.P.; Caracappa, A.; Fan, Q.

1995-01-01

Energy weighted integrals of the difference in helicity-dependent photo-production cross sections (σ 1/2 - σ 3/2 ) provide information on the nucleon's Spin-dependent Polarizability (γ), and on the spin-dependent part of the asymptotic forward Compton amplitude through the Drell-Hearn-Gerasimov (DHG) sum rule. (The latter forms the Q 2 =0 limit of recent spin-asymmetry experiments in deep-inelastic lepton-scattering.) There are no direct measurements of σ 1/2 or σ 3/2 , for either the proton or the neutron. Estimates from current π-photo-production multipole analyses, particularly for the proton-neutron difference, are in good agreement with relativistic-l-loop Chiral calculations (χPT) for γ but predict large deviations from the DHG sum rule. Either (a) both the 2-loop corrections to the Spin-Polarizability are large and the existing multipoles are wrong, or (b) modifications to the Drell-Hearn-Gerasimov sum rule are required to fully describe the isospin structure of the nucleon. The helicity-dependent photo-reaction amplitudes, for both the proton and the neutron, will be measured at LEGS from pion-threshold to 470 MeV. In these double-polarization experiments, circularly polarized photons from LEGS will be used with SPHICE, a new frozen-spin target consisting of rvec H · rvec D in the solid phase. Reaction channels will be identified in SASY, a large detector array covering about 80% of 4π. A high degree of symmetry in both target and detector will be used to minimize systematic uncertainties

Spin current and spin transfer torque in ferromagnet/superconductor spin valves

Science.gov (United States)

Moen, Evan; Valls, Oriol T.

2018-05-01

Using fully self-consistent methods, we study spin transport in fabricable spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our methods ensure that the proper relations between spin current gradients and spin transfer torques are satisfied. We present results as a function of geometrical parameters, interfacial barrier values, misalignment angle between the ferromagnets, and bias voltage. Our main results are for the spin current and spin accumulation as functions of position within the spin valve structure. We see precession of the spin current about the exchange fields within the ferromagnets, and penetration of the spin current into the superconductor for biases greater than the critical bias, defined in the text. The spin accumulation exhibits oscillating behavior in the normal metal, with a strong dependence on the physical parameters both as to the structure and formation of the peaks. We also study the bias dependence of the spatially averaged spin transfer torque and spin accumulation. We examine the critical-bias effect of these quantities, and their dependence on the physical parameters. Our results are predictive of the outcome of future experiments, as they take into account imperfect interfaces and a realistic geometry.

Spin transfer torque with spin diffusion in magnetic tunnel junctions

KAUST Repository

Manchon, Aurelien; Matsumoto, R.; Jaffres, H.; Grollier, J.

2012-01-01

in the metallic layers. We show that spin diffusion mixes the transverse spin current components and dramatically modifies the bias dependence of the effective spin transfer torque. This leads to a significant linear bias dependence of the out-of-plane torque

Temperature dependence of the magnetization of canted spin structures

DEFF Research Database (Denmark)

Jacobsen, Henrik; Lefmann, Kim; Brok, Erik

2012-01-01

Numerous studies of the low-temperature saturation magnetization of ferrimagnetic nanoparticles and diamagnetically substituted ferrites have shown an anomalous temperature dependence. It has been suggested that this is related to freezing of canted magnetic structures. We present models for the ......Numerous studies of the low-temperature saturation magnetization of ferrimagnetic nanoparticles and diamagnetically substituted ferrites have shown an anomalous temperature dependence. It has been suggested that this is related to freezing of canted magnetic structures. We present models...... for the temperature dependence of the magnetization of a simple canted spin structure in which relaxation can take place at finite temperatures between spin configurations with different canting angles. We show that the saturation magnetization may either decrease or increase with decreasing temperature, depending...

Mesoscopic spin Hall effect in semiconductor nanostructures

Science.gov (United States)

Zarbo, Liviu

The spin Hall effect (SHE) is a name given to a collection of diverse phenomena which share two principal features: (i) longitudinal electric current flowing through a paramagnetic semiconductor or metallic sample leads to transverse spin current and spin accumulation of opposite sign at opposing lateral edges; (ii) SHE does not require externally applied magnetic field or magnetic ordering in the equilibrium state of the sample, instead it relies on the presence of spin-orbit (SO) couplings within the sample. This thesis elaborates on a new type of phenomenon within the SHE family, predicted in our recent studies [Phys. Rev. B 72, 075361 (2005); Phys. Rev. Lett. 95, 046601 (2005); Phys. Rev. B 72, 075335 (2005); Phys. Rev. B 73 , 075303 (2006); and Europhys. Lett. 77, 47004 (2007)], where pure spin current flows through the transverse electrodes attached to a clean finitesize two-dimensional electron gas (2DEG) due to unpolarized charge current injected through its longitudinal leads. If transverse leads are removed, the effect manifests as nonequilibrium spin Hall accumulation at the lateral edges of 2DEG wires. The SO coupling driving this SHE effect is of the Rashba type, which arises due to structural inversion asymmetry of semiconductor heterostructure hosting the 2DEG. We term the effect "mesoscopic" because the spin Hall currents and accumulations reach optimal value in samples of the size of the spin precession length---the distance over which the spin of an electron precesses by an angle pi. In strongly SO-coupled structures this scale is of the order of ˜100 nm, and, therefore, mesoscopic in the sense of being much larger than the characteristic microscopic scales (such as the Fermi wavelength, screening length, or the mean free path in disordered systems), but still much smaller than the macroscopic ones. Although the first theoretical proposal for SHE, driven by asymmetry in SO-dependent scattering of spin-up and spin-down electrons off impurities

Temperature dependence of spin-orbit torques in Cu-Au alloys

KAUST Repository

Wen, Yan; Wu, Jun; Li, Peng; Zhang, Qiang; Zhao, Yuelei; Manchon, Aurelien; Xiao, John Q.; Zhang, Xixiang

2017-01-01

We investigated current driven spin-orbit torques in Cu40Au60/Ni80Fe20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.

Temperature dependence of spin-orbit torques in Cu-Au alloys

KAUST Repository

Wen, Yan

2017-03-07

We investigated current driven spin-orbit torques in Cu40Au60/Ni80Fe20/Ti layered structures with in-plane magnetization. We have demonstrated a reliable and convenient method to separate dampinglike torque and fieldlike torque by using the second harmonic technique. It is found that the dampinglike torque and fieldlike torque depend on temperature very differently. Dampinglike torque increases with temperature, while fieldlike torque decreases with temperature, which are different from results obtained previously in other material systems. We observed a nearly linear dependence between the spin Hall angle and longitudinal resistivity, suggesting that skew scattering may be the dominant mechanism of spin-orbit torques.

Spin-polarized scanning-tunneling probe for helical Luttinger liquids.

Science.gov (United States)

Das, Sourin; Rao, Sumathi

2011-06-10

We propose a three-terminal spin-polarized STM setup for probing the helical nature of the Luttinger liquid edge state that appears in the quantum spin Hall system. We show that the three-terminal tunneling conductance depends on the angle (θ) between the magnetization direction of the tip and the local orientation of the electron spin on the edge while the two terminal conductance is independent of this angle. We demonstrate that chiral injection of an electron into the helical Luttinger liquid (when θ is zero or π) is associated with fractionalization of the spin of the injected electron in addition to the fractionalization of its charge. We also point out a spin current amplification effect induced by the spin fractionalization.

Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution.

Science.gov (United States)

Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland

2010-07-23

We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.

Spin-dependent electronic transport properties of transition metal atoms doped α-armchair graphyne nanoribbons

Science.gov (United States)

Fotoohi, Somayeh; Haji-Nasiri, Saeed

2018-04-01

Spin-dependent electronic transport properties of single 3d transition metal (TM) atoms doped α-armchair graphyne nanoribbons (α-AGyNR) are investigated by non-equilibrium Green's function (NEGF) method combined with density functional theory (DFT). It is found that all of the impurity atoms considered in this study (Fe, Co, Ni) prefer to occupy the sp-hybridized C atom site in α-AGyNR, and the obtained structures remain planar. The results show that highly localized impurity states are appeared around the Fermi level which correspond to the 3d orbitals of TM atoms, as can be derived from the projected density of states (PDOS). Moreover, Fe, Co, and Ni doped α-AGyNRs exhibit magnetic properties due to the strong spin splitting property of the energy levels. Also for each case, the calculated current-voltage characteristic per super-cell shows that the spin degeneracy in the system is obviously broken and the current becomes strongly spin dependent. Furthermore, a high spin-filtering effect around 90% is found under the certain bias voltages in Ni doped α-AGyNR. Additionally, the structure with Ni impurity reveals transfer characteristic that is suitable for designing a spin current switch. Our findings provide a high possibility to design the next generation spin nanodevices with novel functionalities.

A bias-tunable electron-spin filter based on a two-dimensional electron gas modulated by ferromagnetic-Schottky metal stripes

Energy Technology Data Exchange (ETDEWEB)

Lu Jianduo, E-mail: l_j316@163.co [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Li Yunbao; Yun Meijuan [Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081 (China); Zheng Wei [Key Laboratory of Dynamic Geodesy, Institute of Geodesy and Geophysics, Chinese Academy of Sciences, Wuhan 430077 (China)

2011-03-28

We investigate the effect of the bias in an electron-spin filter based on a two-dimensional electron gas modulated by ferromagnetic-Schottky metal stripes. The numerical results show that the electron transmission and the conductance as well as the spin polarization are strongly dependent on the bias applied to the device. - Research highlights: We propose a bias-tunable electron-spin filter. The transmission and the conductance depend on the bias and the electron energy. The spin polarization depends on the bias and the electron energy. The results are helpful for making new types of bias-tunable spin filters.

Spin-Current-Controlled Modulation of the Magnon Spin Conductance in a Three-Terminal Magnon Transistor

Science.gov (United States)

Cornelissen, L. J.; Liu, J.; van Wees, B. J.; Duine, R. A.

2018-03-01

Efficient manipulation of magnon spin transport is crucial for developing magnon-based spintronic devices. In this Letter, we provide proof of principle of a method for modulating the diffusive transport of thermal magnons in an yttrium iron garnet channel between injector and detector contacts. The magnon spin conductance of the channel is altered by increasing or decreasing the magnon chemical potential via spin Hall injection of magnons by a third modulator electrode. We obtain a modulation efficiency of 1.6 %/mA at T =250 K . Finite element modeling shows that this could be increased to well above 10 %/mA by reducing the thickness of the channel, providing interesting prospects for the development of thermal-magnon-based logic circuits.

Spin Hall effect of a light beam in left-handed materials

International Nuclear Information System (INIS)

Luo Hailu; Wen Shuangchun; Shu Weixing; Tang Zhixiang; Zou Yanhong; Fan Dianyuan

2009-01-01

We establish a general propagation model to describe the spin Hall effect of light beam in left-handed materials (LHMs). A spin-dependent shift of the beam centroid perpendicular to the refractive index gradient for the light beam through an air-LHM interface is demonstrated. For a certain circularly polarized component, whether the transverse shift is positive or negative depends on the magnitude of the refractive index gradient. Very surprisingly, the spin Hall effect in the LHM is unreversed, although the sign of refractive index gradient is reversed. The physics underlying this counterintuitive effect is that the spin angular momentum of photons is unreversed. Further, we reveal that the angular shift in the LHM is reversed due to the negative diffraction. These findings provide alternative evidence for that the linear momentum of photons is reversed, while the spin angular momentum is unreversed in the LHM.

Resonant spin Hall effect in two dimensional electron gas

Science.gov (United States)

Shen, Shun-Qing

2005-03-01

Remarkable phenomena have been observed in 2DEG over last two decades, most notably, the discovery of integer and fractional quantum Hall effect. The study of spin transport provides a good opportunity to explore spin physics in two-dimensional electron gas (2DEG) with spin-orbit coupling and other interaction. It is already known that the spin-orbit coupling leads to a zero-field spin splitting, and competes with the Zeeman spin splitting if the system is subjected to a magnetic field perpendicular to the plane of 2DEG. The result can be detected as beating of the Shubnikov-de Haas oscillation. Very recently the speaker and his collaborators studied transport properties of a two-dimensional electron system with Rashba spin-orbit coupling in a perpendicular magnetic field. The spin-orbit coupling competes with the Zeeman splitting to generate additional degeneracies between different Landau levels at certain magnetic fields. It is predicted theoretically that this degeneracy, if occurring at the Fermi level, gives rise to a resonant spin Hall conductance, whose height is divergent as 1/T and whose weight is divergent as -lnT at low temperatures. The charge Hall conductance changes by 2e^2/h instead of e^2/h as the magnetic field changes through the resonant point. The speaker will address the resonance condition, symmetries in the spin-orbit coupling, the singularity of magnetic susceptibility, nonlinear electric field effect, the edge effect and the disorder effect due to impurities. This work was supported by the Research Grants Council of Hong Kong under Grant No.: HKU 7088/01P. *S. Q. Shen, M. Ma, X. C. Xie, and F. C. Zhang, Phys. Rev. Lett. 92, 256603 (2004) *S. Q. Shen, Y. J. Bao, M. Ma, X. C. Xie, and F. C. Zhang, cond-mat/0410169

Spin-dependent electrical transport in Fe-MgO-Fe heterostructures

Directory of Open Access Journals (Sweden)

A A Shokri

2016-09-01

Full Text Available In this paper, spin-dependent electrical transport properties are investigated in a single-crystal magnetic tunnel junction (MTJ which consists of two ferromagnetic Fe electrodes separated by an MgO insulating barrier. These properties contain electric current, spin polarization and tunnel magnetoresistance (TMR. For this purpose, spin-dependent Hamiltonian is described for Δ1 and Δ5 bands in the transport direction. The transmission is calculated by Green's function formalism based on a single-band tight-binding approximation. The transport properties are investigated as a function of the barrier thickness in the limit of coherent tunneling. We have demonstrated that dependence of the TMR on the applied voltage and barrier thickness. Our numerical results may be useful for designing of spintronic devices. The numerical results may be useful in designing of spintronic devices.

Optical spin generation/detection and spin transport lifetimes

International Nuclear Information System (INIS)

Miah, M. Idrish

2011-01-01

We generate electron spins in semiconductors by optical pumping. The detection of them is also performed by optical technique using time-resolved pump-probe photoluminescence polarization measurements in the presence of an external magnetic field perpendicular to the generated spin. The spin polarization in dependences of the pulse length, pump-probe delay and external magnetic field is studied. From the dependence of spin-polarization on the delay of the probe, the electronic spin transport lifetimes and the spin relaxation frequencies as a function of the strength of the magnetic field are estimated. The results are discussed based on hyperfine effects for interacting electrons.

Optical spin generation/detection and spin transport lifetimes

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish, E-mail: m.miah@griffith.edu.au [Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)

2011-02-25

We generate electron spins in semiconductors by optical pumping. The detection of them is also performed by optical technique using time-resolved pump-probe photoluminescence polarization measurements in the presence of an external magnetic field perpendicular to the generated spin. The spin polarization in dependences of the pulse length, pump-probe delay and external magnetic field is studied. From the dependence of spin-polarization on the delay of the probe, the electronic spin transport lifetimes and the spin relaxation frequencies as a function of the strength of the magnetic field are estimated. The results are discussed based on hyperfine effects for interacting electrons.

The effects of strain on DC transverse and spin-valley Hall conductivity of ferromagnetic MoS{sub 2} and silicene

Energy Technology Data Exchange (ETDEWEB)

Yarmohammadi, Mohsen, E-mail: m.yarmohammadi69@gmail.com

2017-03-15

In this paper, we have investigated the effects of strain on DC transverse and spin-valley Hall conductivity (SHC-VHC) of two-dimensional buckled materials ferromagnetic graphene's analog, MoS{sub 2} and silicene due to their spin–orbit coupling. The Kubo formalism has been used to investigate the dynamics of carriers under strain along the armchair (AC) direction of systems in the context of the Kane–Mele Hamiltonian and the Dirac cone approximation. The effective mass of carriers increases with strain and this leads to the reduction of their transport. We have found that SHC-VHC changes symmetrically with respect to a critical strain around 13% and 45% for MoS{sub 2} and silicene, respectively. Furthermore, the reflection symmetry of silicene has been broken with electric field and a phase transition to topological insulator for strained ferromagnetic silicene has been seen. - Highlights: • Theoretical calculation of strain effects on band structure of MoS{sub 2} and silicene in the presence of electric field. • Investigation of DC transverse and spin-valley Hall conductivity of strained-MoS{sub 2} and silicene in the presence of electric field. • Theoretical calculation of external electric field effects on topological phase transition of silicene in the presence of strain.

Spin transfer in an open ferromagnetic layer: from negative damping to effective temperature

Energy Technology Data Exchange (ETDEWEB)

Wegrowe, J-E; Ciornei, M C; Drouhin, H-J [Laboratoire des Solides Irradies, Ecole Polytechnique, CNRS-UMR 7642 and CEA/DSM/DRECAM, 91128 Palaiseau Cedex (France)

2007-04-23

Spin transfer is a typical spintronics effect that allows a ferromagnetic layer to be switched by spin injection. All experimental results concerning spin transfer (quasi-static hysteresis loops or AC resonance measurements) are described on the basis of the Landau-Lifshitz-Gilbert equation of the magnetization, in which additional current dependent terms are added, like current dependent effective fields and current dependent damping factors, that can be positive or negative. The origin of these terms can be investigated further by performing stochastic experiments, like one-shot relaxation experiments under spin injection in the activation regime of the magnetization. In this regime, the Neel-Brown activation law is observed which leads to the introduction of a current dependent effective temperature. In order to define these counterintuitive parameters (effective temperature and negative damping), a detailed thermokinetic analysis of the different sub-systems involved is performed. This report presents a thermokinetic description of the different forms of energy exchanged between the electric and the ferromagnetic sub-systems at a normal/ferromagnetic junction. The derivation of the Fokker-Planck equation in the framework of the thermokinetic theory allows the transport parameters to be defined from the entropy variation and refined with the Onsager reciprocity relations and symmetry properties of the magnetic system. The contribution of the spin polarized current is introduced as an external source term in the conservation laws of the ferromagnetic layer. Due to the relaxation time separation, this contribution can be reduced to an effective damping. The flux of energy transferred between the ferromagnet and the spin polarized current can be positive or negative, depending on the spin accumulation configuration. The effective temperature is deduced in the activation (stationary) regime, provided that the relaxation time that couples the magnetization to the

Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures

Science.gov (United States)

Cho, Soonha; Baek, Seung-heon Chris; Lee, Kyeong-Dong; Jo, Younghun; Park, Byong-Guk

2015-01-01

The phenomena based on spin-orbit interaction in heavy metal/ferromagnet/oxide structures have been investigated extensively due to their applicability to the manipulation of the magnetization direction via the in-plane current. This implies the existence of an inverse effect, in which the conductivity in such structures should depend on the magnetization orientation. In this work, we report a systematic study of the magnetoresistance (MR) of W/CoFeB/MgO structures and its correlation with the current-induced torque to the magnetization. We observe that the MR is independent of the angle between the magnetization and current direction but is determined by the relative magnetization orientation with respect to the spin direction accumulated by the spin Hall effect, for which the symmetry is identical to that of so-called the spin Hall magnetoresistance. The MR of ~1% in W/CoFeB/MgO samples is considerably larger than those in other structures of Ta/CoFeB/MgO or Pt/Co/AlOx, which indicates a larger spin Hall angle of W. Moreover, the similar W thickness dependence of the MR and the current-induced magnetization switching efficiency demonstrates that MR in a non-magnet/ferromagnet structure can be utilized to understand other closely correlated spin-orbit coupling effects such as the inverse spin Hall effect or the spin-orbit spin transfer torques. PMID:26423608

Enhancement of the spin Peltier effect in multilayers

Science.gov (United States)

Uchida, K.; Iguchi, R.; Daimon, S.; Ramos, R.; Anadón, A.; Lucas, I.; Algarabel, P. A.; Morellón, L.; Aguirre, M. H.; Ibarra, M. R.; Saitoh, E.

2017-05-01

The spin Peltier effect (SPE), heat-current generation as a result of spin-current injection, has been investigated in alternately stacked Pt/Fe3O4 multilayer films. The temperature modulation induced by the SPE in the [Pt/Fe3O4]×n films was found to be significantly enhanced with increasing the number of Pt/Fe3O4 bilayers n . This SPE enhancement is much greater than that expected for a simple stack of independent Pt/Fe3O4 bilayers. The observed n dependence of the SPE can be explained by introducing spin-current redistribution in the multilayer films in the thickness direction, in a manner similar to the enhancement of the spin Seebeck effect in multilayers.

Controllable spin-charge transport in strained graphene nanoribbon devices

Energy Technology Data Exchange (ETDEWEB)

Diniz, Ginetom S., E-mail: ginetom@gmail.com; Guassi, Marcos R. [Institute of Physics, University of Brasília, 70919-970, Brasília-DF (Brazil); Qu, Fanyao [Institute of Physics, University of Brasília, 70919-970, Brasília-DF (Brazil); Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

2014-09-21

We theoretically investigate the spin-charge transport in two-terminal device of graphene nanoribbons in the presence of a uniform uniaxial strain, spin-orbit coupling, exchange field, and smooth staggered potential. We show that the direction of applied strain can efficiently tune strain-strength induced oscillation of band-gap of armchair graphene nanoribbon (AGNR). It is also found that electronic conductance in both AGNR and zigzag graphene nanoribbon (ZGNR) oscillates with Rashba spin-orbit coupling akin to the Datta-Das field effect transistor. Two distinct strain response regimes of electronic conductance as function of spin-orbit couplings magnitude are found. In the regime of small strain, conductance of ZGNR presents stronger strain dependence along the longitudinal direction of strain. Whereas for high values of strain shows larger effect for the transversal direction. Furthermore, the local density of states shows that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be determined experimentally by either spatially scanning tunneling microscope or by scanning tunneling spectroscopy. Our findings open up new paradigms of manipulation and control of strained graphene based nanostructure for application on novel topological quantum devices.

Large anomalous Nernst and spin Nernst effects in the noncollinear antiferromagnets Mn3X (X =Sn ,Ge ,Ga )

Science.gov (United States)

Guo, Guang-Yu; Wang, Tzu-Cheng

2017-12-01

Noncollinear antiferromagnets have recently been attracting considerable interest partly due to recent surprising discoveries of the anomalous Hall effect (AHE) in them and partly because they have promising applications in antiferromagnetic spintronics. Here we study the anomalous Nernst effect (ANE), a phenomenon having the same origin as the AHE, and also the spin Nernst effect (SNE) as well as AHE and the spin Hall effect (SHE) in noncollinear antiferromagnetic Mn3X (X =Sn , Ge, Ga) within the Berry phase formalism based on ab initio relativistic band structure calculations. For comparison, we also calculate the anomalous Nernst conductivity (ANC) and anomalous Hall conductivity (AHC) of ferromagnetic iron as well as the spin Nernst conductivity (SNC) of platinum metal. Remarkably, the calculated ANC at room temperature (300 K) for all three alloys is huge, being 10-40 times larger than that of iron. Moreover, the calculated SNC for Mn3Sn and Mn3Ga is also larger, being about five times larger than that of platinum. This suggests that these antiferromagnets would be useful materials for thermoelectronic devices and spin caloritronic devices. The calculated ANC of Mn3Sn and iron are in reasonably good agreement with the very recent experiments. The calculated SNC of platinum also agrees with the very recent experiments in both sign and magnitude. The calculated thermoelectric and thermomagnetic properties are analyzed in terms of the band structures as well as the energy-dependent AHC, ANC, SNC, and spin Hall conductivity via the Mott relations.

Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers

Science.gov (United States)

Czeschka, F. D.; Dreher, L.; Brandt, M. S.; Weiler, M.; Althammer, M.; Imort, I.-M.; Reiss, G.; Thomas, A.; Schoch, W.; Limmer, W.; Huebl, H.; Gross, R.; Goennenwein, S. T. B.

2011-07-01

We systematically measured the dc voltage VISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet-platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite spinel oxides, and magnetic semiconductors, VISH invariably has the same polarity, and scales with the magnetization precession cone angle. These findings, together with the spin mixing conductance derived from the experimental data, quantitatively corroborate the present theoretical understanding of spin pumping in combination with the inverse spin Hall effect.

Double Rashba Quantum Dots Ring as a Spin Filter

Directory of Open Access Journals (Sweden)

Chi Feng

2008-01-01

Full Text Available AbstractWe theoretically propose a double quantum dots (QDs ring to filter the electron spin that works due to the Rashba spin–orbit interaction (RSOI existing inside the QDs, the spin-dependent inter-dot tunneling coupling and the magnetic flux penetrating through the ring. By varying the RSOI-induced phase factor, the magnetic flux and the strength of the spin-dependent inter-dot tunneling coupling, which arises from a constant magnetic field applied on the tunneling junction between the QDs, a 100% spin-polarized conductance can be obtained. We show that both the spin orientations and the magnitude of it can be controlled by adjusting the above-mentioned parameters. The spin filtering effect is robust even in the presence of strong intra-dot Coulomb interactions and arbitrary dot-lead coupling configurations.

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.

2017-12-08

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Spin Hall and spin swapping torques in diffusive ferromagnets

KAUST Repository

Pauyac, C. O.; Chshiev, M.; Manchon, Aurelien; Nikolaev, S. A.

2017-01-01

A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

Widespread spin polarization effects in photoemission from topological insulators

Energy Technology Data Exchange (ETDEWEB)

Jozwiak, C.; Chen, Y. L.; Fedorov, A. V.; Analytis, J. G.; Rotundu, C. R.; Schmid, A. K.; Denlinger, J. D.; Chuang, Y.-D.; Lee, D.-H.; Fisher, I. R.; Birgeneau, R. J.; Shen, Z.-X.; Hussain, Z.; Lanzara, A.

2011-06-22

High-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi{sub 2}Se{sub 3} using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations of photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.

Longitudinal spin dependence of massive lepton pair production

International Nuclear Information System (INIS)

Berger, E. L.; Gordon, L. E.; Klasen, M.

2000-01-01

In this paper, the authors summarize recent work in which they demonstrate that the Compton subprocess, q + g -> γ* + q also dominates the Drell-Yan cross section in polarized and unpolarized proton-proton reactions for values of the transverse momentum Q T of the pair that are larger than roughly half of the pair mass Q, Q T > Q/2. The Drell-Yan process is therefore a valuable, heretofore overlooked, independent source of constraints on the spin-averaged and spin-dependent gluon densities. Although the Drell-Yan cross section is smaller than the prompt photon cross section, massive lepton pair production is cleaner theoretically since long-range fragmentation contributions are absent as are the experimental and theoretical complications associated with isolation of the real photon. Moreover, the dynamics of spin-dependence in hard-scattering processes is a sufficiently complex topic, and its understanding at an early stage in its development, that several defensible approaches for extracting polarized parton densities deserve to be pursued with the expectation that consistent results must emerge

Spin-polarized ballistic conduction through correlated Au-NiMnSb-Au heterostructures

KAUST Repository

Morari, C.

2017-11-20

We examine the ballistic conduction through Au-NiMnSb-Au heterostructures consisting of up to four units of the half-metallic NiMnSb in the scattering region, using density functional theory (DFT) methods. For a single NiMnSb unit the transmission function displays a spin polarization of around 50% in a window of 1eV centered around the Fermi level. By increasing the number of layers, an almost complete spin polarization of the transmission is obtained in this energy range. Supplementing the DFT calculations with local electronic interactions, of Hubbard-type on the Mn sites, leads to a hybridization between the interface and many-body states. The significant reduction of the spin polarization seen in the density of states is not apparent in the spin polarization of the conduction electron transmission, which suggests that the hybridized interface and many-body induced states are localized.

Spin disorder effect in anomalous Hall effect in MnGa

Science.gov (United States)

Mendonça, A. P. A.; Varalda, J.; Schreiner, W. H.; Mosca, D. H.

2017-12-01

We report on resistivity and Hall effect in MnGa thin films grown by molecular beam epitaxy on GaAs substrates. Highly (1 1 1)-textured MnGa film with L10 structure exhibits hard magnetic properties with coercivities as high as 20 kOe and spin disorder mechanisms contributing to the Hall conductivity at room temperature. Density functional theory calculations were performed to determine the intrinsic Berry curvature in the momentum space with chiral spin structure that results in an anomalous Hall conductivity of 127 (Ωcm)-1 comparable to that measured at low temperature. In addition to residual and side-jump contributions, which are enhanced by thermal activation, both anomalous Hall conductivity and Hall angle increase between 100 K and room temperature. The present results reinforce the potential of Mn-Ga system for developing Hall effect-based spintronic devices.

Nonequilibrium Dynamics of Anisotropic Large Spins in the Kondo Regime: Time-Dependent Numerical Renormalization Group Analysis

Science.gov (United States)

Roosen, David; Wegewijs, Maarten R.; Hofstetter, Walter

2008-02-01

We investigate the time-dependent Kondo effect in a single-molecule magnet (SMM) strongly coupled to metallic electrodes. Describing the SMM by a Kondo model with large spin S>1/2, we analyze the underscreening of the local moment and the effect of anisotropy terms on the relaxation dynamics of the magnetization. Underscreening by single-channel Kondo processes leads to a logarithmically slow relaxation, while finite uniaxial anisotropy causes a saturation of the SMM’s magnetization. Additional transverse anisotropy terms induce quantum spin tunneling and a pseudospin-1/2 Kondo effect sensitive to the spin parity.

Spin-flip induced magnetoresistance in positionally disordered organic solids.

Science.gov (United States)

Harmon, N J; Flatté, M E

2012-05-04

A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Faster spin-flip transitions open up "spin-blocked" pathways to become viable conduction channels and hence produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with previous measurements, including the sensitive dependence of the magnetic-field dependence of the magnetoresistance on the ratio of the carrier hopping time to the hyperfine-induced carrier spin precession time. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory.

Nonlocal magnon spin transport in yttrium iron garnet with tantalum and platinum spin injection/detection electrodes

Science.gov (United States)

Liu, J.; Cornelissen, L. J.; Shan, J.; van Wees, B. J.; Kuschel, T.

2018-06-01

We study the magnon spin transport in the magnetic insulator yttrium iron garnet (YIG) in a nonlocal experiment and compare the magnon spin excitation and detection for the heavy metal paramagnetic electrodes platinum (Pt|YIG|Pt) and tantalum (Ta|YIG|Ta). The electrical injection and detection processes rely on the (inverse) spin Hall effect in the heavy metals and the conversion between the electron spin and magnon spin at the heavy metal|YIG interface. Pt and Ta possess opposite signs of the spin Hall angle. Furthermore, their heterostructures with YIG have different interface properties, i.e. spin mixing conductances. By varying the distance between injector and detector, the magnon spin transport is studied. Using a circuit model based on the diffusion-relaxation transport theory, a similar magnon relaxation length of  ∼10 μm was extracted from both Pt and Ta devices. By changing the injector and detector material from Pt to Ta, the influence of interface properties on the magnon spin transport has been observed. For Ta devices on YIG the spin mixing conductance is reduced compared with Pt devices, which is quantitatively consistent when comparing the dependence of the nonlocal signal on the injector-detector distance with the prediction from the circuit model.

Spin-Spin Relaxation and Karyagin-Gol'danskii Effect in FeCl3·6H2O

DEFF Research Database (Denmark)

Thrane, N.; Trumpy, Georg

1970-01-01

. Qualitatively, the experimental results can be explained by a combination of a temperature-and magnetic-field-dependent spin-spin relaxation and the Karyagin-Gol'danskii effect. This implies that the zero-field splitting is about 20°K between the lowest-lying Kramers doublet, found to be the |±1 / 2...

Separation of Rashba and Dresselhaus spin-orbit interactions using crystal direction dependent transport measurements

International Nuclear Information System (INIS)

Ho Park, Youn; Kim, Hyung-jun; Chang, Joonyeon; Hee Han, Suk; Eom, Jonghwa; Choi, Heon-Jin; Cheol Koo, Hyun

2013-01-01

The Rashba spin-orbit interaction effective field is always in the plane of the two-dimensional electron gas and perpendicular to the carrier wavevector but the direction of the Dresselhaus field depends on the crystal orientation. These two spin-orbit interaction parameters can be determined separately by measuring and analyzing the Shubnikov-de Haas oscillations for various crystal directions. In the InAs quantum well system investigated, the Dresselhaus term is just 5% of the Rashba term. The gate dependence of the oscillation patterns clearly shows that only the Rashba term is modulated by an external electric field

Length dependence of rectification in organic co-oligomer spin rectifiers

International Nuclear Information System (INIS)

Hu Gui-Chao; Zhang Zhao; Li Ying; Ren Jun-Feng; Wang Chuan-Kui

2016-01-01

The rectification ratio of organic magnetic co-oligomer diodes is investigated theoretically by changing the molecular length. The results reveal two distinct length dependences of the rectification ratio: for a short molecular diode, the charge-current rectification changes little with the increase of molecular length, while the spin-current rectification is weakened sharply by the length; for a long molecular diode, both the charge-current and spin-current rectification ratios increase quickly with the length. The two kinds of dependence switch at a specific length accompanied with an inversion of the rectifying direction. The molecular ortibals and spin-resolved transmission analysis indicate that the dominant mechanism of rectification suffers a change at this specific length, that is, from asymmetric shift of molecular eigenlevels to asymmetric spatial localization of wave functions upon the reversal of bias. This work demonstrates a feasible way to control the rectification in organic co-oligomer spin diodes by adjusting the molecular length. (paper)

The role of Rashba spin-orbit coupling in valley-dependent transport of Dirac fermions

Energy Technology Data Exchange (ETDEWEB)

Hasanirok, Kobra; Mohammadpour, Hakimeh

2017-01-01

At this work, spin- and valley-dependent electron transport through graphene and silicene layers are studied in the presence of Rashba spin- orbit coupling. We find that the transport properties of the related ferromagnetic/normal/ferromagnetic structure depend on the relevant parameters. A fully valley- and spin- polarized current is obtained. As another result, Rashba spin-orbit interaction plays important role in controlling the transmission characteristics.

Nanoscale spin-dependent transport of electrons and holes in Si-ferromagnet structures

NARCIS (Netherlands)

Ul Haq, E.

Given the rapid development of magnetic data storage and spin-electronics into the realm of nanotechnology, the understanding of the spin-dependent electronic transport and switching behavior of magnetic structures at the nanoscale is an important issue. We have developed spin-sensitive techniques

Compound nucleus effects in spin-spin cross sections

International Nuclear Information System (INIS)

Thompson, W.J.

1976-01-01

By comparison with recent data, it is shown that spin-spin cross sections for low-energy neutrons may be dominated by a simple compound-elastic level-density effect, independent of spin-spin terms in the nucleon-nucleus optical-model potential. (Auth.)

An edge index for the quantum spin-Hall effect

International Nuclear Information System (INIS)

Prodan, Emil

2009-01-01

Quantum spin-Hall systems are topological insulators displaying dissipationless spin currents flowing at the edges of the samples. In contradistinction to the quantum Hall systems where the charge conductance of the edge modes is quantized, the spin conductance is not and it remained an open problem to find the observable whose edge current is quantized. In this paper, we define a particular observable and the edge current corresponding to this observable. We show that this current is quantized and that the quantization is given by the index of a certain Fredholm operator. This provides a new topological invariant that is shown to take the generic values 0 and 2, in line with the Z 2 topological classification of time-reversal invariant systems. The result gives an effective tool for the investigation of the edge structure in quantum spin-Hall systems. Based on a reasonable assumption, we also show that the edge conducting channels are not destroyed by a random edge. (fast track communication)

Spin effects in intermediate-energy heavy-ion collisions

International Nuclear Information System (INIS)

Xu Jun; Li Baoan; Xia Yin; Shen Wenqing

2014-01-01

In this paper, we report and extend our recent work where the nucleon spin-orbit interaction and its spin degree of freedom were introduced explicitly for the first time in the isospin-dependent Boltzmann-Uehling-Uhlenbeck transport model for heavy-ion reactions. Despite of the significant cancellation of the time-even and time-odd spin-related mean-field potentials from the spin-orbit interaction,an appreciable local spin polarization is observed in heavy-ion collisions at intermediate energies because of the dominating role of the time-odd terms. It is also found that the spin up-down differential transverse flow in heavy-ion collisions is a useful probe of the strength, density dependence, and isospin dependence of the in-medium spin-orbit interaction, and its magnitude is still considerable even at smaller systems. (authors)

Ground state magnetization of conduction electrons in graphene with Zeeman effect

Energy Technology Data Exchange (ETDEWEB)

Escudero, F., E-mail: federico.escudero@uns.edu.ar [Departamento de Física, Universidad Nacional del Sur, Av. Alem 1253, B8000CPB Bahía Blanca (Argentina); Instituto de Física del Sur (IFISUR, UNS-CONICET), Av. Alem 1253, B8000CPB Bahía Blanca (Argentina); Ardenghi, J.S., E-mail: jsardenhi@gmail.com [Departamento de Física, Universidad Nacional del Sur, Av. Alem 1253, B8000CPB Bahía Blanca (Argentina); Instituto de Física del Sur (IFISUR, UNS-CONICET), Av. Alem 1253, B8000CPB Bahía Blanca (Argentina); Sourrouille, L., E-mail: lsourrouille@yahoo.es [Departamento de Física, Universidad Nacional del Sur, Av. Alem 1253, B8000CPB Bahía Blanca (Argentina); Instituto de Física del Sur (IFISUR, UNS-CONICET), Av. Alem 1253, B8000CPB Bahía Blanca (Argentina); Jasen, P., E-mail: pvjasen@uns.edu.ar [Departamento de Física, Universidad Nacional del Sur, Av. Alem 1253, B8000CPB Bahía Blanca (Argentina); Instituto de Física del Sur (IFISUR, UNS-CONICET), Av. Alem 1253, B8000CPB Bahía Blanca (Argentina)

2017-05-01

In this work we address the ground state magnetization in graphene, considering the Zeeman effect and taking into account the conduction electrons in the long wavelength approximation. We obtain analytical expressions for the magnetization at T=0 K, where the oscillations given by the de Haas van Alphen (dHvA) effect are present. We find that the Zeeman effect modifies the magnetization by introducing new peaks associated with the spin splitting of the Landau levels. These peaks are very small for typical carrier densities in graphene, but become more important for higher densities. The obtained results provide insight of the way in which the Zeeman effect modifies the magnetization, which can be useful to control and manipulate the spin degrees of freedom. - Highlights: • The magnetization has peaks whenever the last energy level changes discontinuously. • The peaks amplitude depends on the electron density. • The Zeeman effect introduces new peaks in the magnetization.

The effects of spin in gases

International Nuclear Information System (INIS)

Laloee, F.; Freed, J.H.

1988-01-01

Low-density gases, in which atoms are separated by large distances, have long provided an enjoyable playground for physicists. One might suppose the pleasure of the playground would by now have been exhausted by the very simplicity of low-density gases. Recent work by a number of investigators including the author shows that this is not the case low-density gases continue to serve up a rich variety of phenomena as well as counterintuitive surprises. In particular, the macroscopic properties of a gas composed of individual hydrogen or helium atoms can under special circumstances by changed dramatically by quantum-mechanical effects. According to quantum theory, the nucleus of an atom behaves in a way similar to a rotating top, which has angular momentum about its axis of rotation; that is, the nucleus has spin, known more precisely as spin angular momentum. If the atoms of a gas are spin-polarized, so that their nuclei all have their spins pointing in the same direction, the viscosity of the gas can be changed enormously and so can its ability to conduct heat. Quantum-mechanical correlations among the nuclei called spin waves, which up to now had been observed only in certain liquids and solids such as magnets, can also arise. The changes are large enough for one to say the quantum-mechanical effects have caused the gas to take on entirely new properties. In a certain sense it is amazing to think that polarizing the nuclear spins can have any effect on the macroscopic properties of the gas, since the nuclear spins are son weakly coupled to the outside world. Yet the observations are in full agreement with with theory. Moreover, because spin-polarized gases are still fairly simple systems, they can be understood in terms fundamental principles, something that is still not possible to do in the case of liquids and solids

Effect of asymmetric interface on charge and spin transport across two dimensional electron gas with Dresselhaus spin-orbit coupling/ferromagnet junction

Science.gov (United States)

Srisongmuang, B.; Pasanai, K.

2018-04-01

We theoretically studied the effect of interfacial scattering on the transport of charge and spin across the junction of a two-dimensional electron gas with Dresselhaus spin-orbit coupling and ferromagnetic material junction, via the conductance (G) and the spin-polarization of the conductance spectra (P) using the scattering method. At the interface, not only were the effects of spin-conserving (Z0) and spin-flip scattering (Zf) considered, but also the interfacial Rashba spin-orbit coupling scattering (ZRSOC) , which was caused by the asymmetry of the interface, was taken into account, and all of them were modeled by the delta potential. It was found that G was suppressed with increasing Z0 , as expected. Interestingly, a particular value of Zf can cause G and P to reach a maximum value. In particular, ZRSOC plays a crucial role to reduce G and P in the metallic limit, but its influence on the tunneling limit was quite weak. On the other hand, the effect of ZRSOC was diminished in the tunneling limit of the magnetic junction.

Realization of spin-dependent splitting with arbitrary intensity patterns based on all-dielectric metasurfaces

Energy Technology Data Exchange (ETDEWEB)

Ke, Yougang; Liu, Yachao; He, Yongli; Zhou, Junxiao; Luo, Hailu, E-mail: hailuluo@hnu.edu.cn; Wen, Shuangchun [Laboratory for Spin Photonics, School of Physics and Electronics, Hunan University, Changsha 410082 (China)

2015-07-27

We report the realization of spin-dependent splitting with arbitrary intensity patterns based on all-dielectric metasurfaces. Compared with the plasmonic metasurfaces, the all-dielectric metasurface exhibits more high transmission efficiency and conversion efficiency, which makes it possible to achieve the spin-dependent splitting with arbitrary intensity patterns. Our findings suggest a way for generation and manipulation of spin photons, and thereby offer the possibility of developing spin-based nanophotonic applications.

Medium energy inelastic proton-nucleus scattering with spin dependent NN interaction

International Nuclear Information System (INIS)

Ahmad, I.; Auger, J.P.

1981-12-01

The previously proposed effective profile expansion method for the Glauber multiple scattering model calculation has been extended to the case of proton-nucleus inelastic scattering with spin dependent NN interaction. Using the method which turns out to be computationally simple and of relatively wider applicability, a study of sensitivity of proton-nucleus inelastic scattering calculation to the sometimes neglected momentum transfer dependence of the NN scattering amplitude has been made. We find that the calculated polarization is particularly sensitive in this respect. (author)

Temperature dependent spin momentum densities in Ni-Mn-In alloys

International Nuclear Information System (INIS)

Ahuja, B L; Dashora, Alpa; Vadkhiya, L; Heda, N L; Priolkar, K R; Lobo, Nelson; Itou, M; Sakurai, Y; Chakrabarti, Aparna; Singh, Sanjay; Barman, S R

2010-01-01

The spin-dependent electron momentum densities in Ni 2 MnIn and Ni 2 Mn 1.4 In 0.6 shape memory alloy using magnetic Compton scattering with 182.2 keV circularly polarized synchrotron radiation are reported. The magnetic Compton profiles were measured at different temperatures ranging between 10 and 300 K. The profiles have been analyzed mainly in terms of Mn 3d electrons to determine their role in the formation of the total spin moment. We have also computed the spin polarized energy bands, partial and total density of states, Fermi surfaces and spin moments using full potential linearized augmented plane wave and spin polarized relativistic Korringa-Kohn-Rostoker methods. The total spin moments obtained from our magnetic Compton profile data are explained using both the band structure models. The present Compton scattering investigations are also compared with magnetization measurements.

Spin relaxation and the Kondo effect in transition metal dichalcogenide monolayers

International Nuclear Information System (INIS)

Rostami, Habib; Moghaddam, Ali G; Asgari, Reza

2016-01-01

We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenide monolayers. We show that momentum and spin relaxation times, due to the exchange interaction by magnetic impurities, are much longer when the Fermi level is inside the spin-split region of the valence band. In contrast to the spin relaxation, we find that the dependence of Kondo temperature T K on the doping is not strongly affected by the spin–orbit induced splitting, although only one of the spin species are present at each valley. This result, which is obtained using both perturbation theory and the poor man’s scaling methods, originates from the intervalley spin-flip scattering in the spin-split region. We further demonstrate the decline in the conductivity with temperatures close to T K , which can vary with the doping. Our findings reveal the qualitative difference with the Kondo physics in conventional metallic systems and other Dirac materials. (paper)

Field induced phase transition in layered honeycomb spin system α-RuCl3 studied by thermal conductivity

Science.gov (United States)

Leahy, Ian; Bornstein, Alex; Choi, Kwang-Yong; Lee, Minhyea

α -RuCl3, a quasi -two-dimensional honeycomb lattice is known to be a candidate material to realize the Heisenberg-Kitaev spin model of a highly anisotropic bond-dependent exchange interaction. We investigate in-plane thermal conductivity (κ) as a function of temperature (T) and in-plane applied field (H). At H = 0 , the onset of a strong increase in κ marks the spontaneous long range ordering temperature, Tc = 6 . 5 K , corresponding to ``zigzag'' antiferromagnetic ordering. A broad peak appearing below Tc in κ was found to be suppressed significantly as H increases up to ~ 7 T , implying the system undergoes a field-induced transition from ordered to a new spin-disordered state analogous to the transverse-field Ising model. Further increasing H above 7 . 1 T , the large field seems to begin polarizing spins thus increasing the phonon mean free path, resulting in a significant rise in κ. This tendency is clearly shown in the field dependence of κ below Tc, which has a pronounced minimum at Hmin = 7 . 1 T . We will discuss our scaling analysis to characterize this field-induced phase transition and compare to the transverse-field Ising spin system. Work at the University of Colorado was supported by the US DOE Basic Energy Sciences under Award No. DE-SC0006888.

Spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor structures

International Nuclear Information System (INIS)

Li, Hong; Yang, Wei; Yang, Xinjian; Qin, Minghui; Guo, Jianqin

2007-01-01

Taking into account the thickness of the ferromagnetic insulator, the spin-filter effect in normal metal/ferromagnetic insulator/normal metal/superconductor (NM/FI/NM/SC) junctions is studied based on the Blonder-Tinkham-Klapwijk (BTK) theory. It is shown that a spin-dependent energy shift during the tunneling process induces splitting of the subgap resonance peaks. The spin polarization due to the spin-filter effect of the FI causes an imbalance of the peaks heights and can enhance the Zeeman splitting of the gap peaks caused by an applied magnetic field. The spin-filter effect has no contribution to the proximity-effect-induced superconductivity in NM interlayer

Rashba-Zeeman-effect-induced spin filtering energy windows in a quantum wire

International Nuclear Information System (INIS)

Xiao, Xianbo; Nie, Wenjie; Chen, Zhaoxia; Zhou, Guanghui; Li, Fei

2014-01-01

We perform a numerical study on the spin-resolved transport in a quantum wire (QW) under the modulation of both Rashba spin-orbit coupling (SOC) and a perpendicular magnetic field by using the developed Usuki transfer-matrix method in combination with the Landauer-Büttiker formalism. Wide spin filtering energy windows can be achieved in this system for unpolarized spin injection. In addition, both the width of energy window and the magnitude of spin conductance within these energy windows can be tuned by varying Rashba SOC strength, which can be apprehended by analyzing the energy dispersions and spin-polarized density distributions inside the QW, respectively. Further study also demonstrates that these Rashba-SOC-controlled spin filtering energy windows show a strong robustness against disorders. These findings may not only benefit to further understand the spin-dependent transport properties of a QW in the presence of external fields but also provide a theoretical instruction to design a spin filter device.

Rashba-Zeeman-effect-induced spin filtering energy windows in a quantum wire

Energy Technology Data Exchange (ETDEWEB)

Xiao, Xianbo, E-mail: xxb-11@hotmail.com; Nie, Wenjie [School of Computer, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004 (China); Chen, Zhaoxia [School of Mechatronics Engineering, East China Jiaotong University, Nanchang 330013 (China); Zhou, Guanghui [Department of Physics and Key Laboratory for Low-Dimensional Quantum Structures and Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081 (China); Li, Fei, E-mail: wltlifei@sina.com [Office of Scientific Research, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004 (China)

2014-06-14

We perform a numerical study on the spin-resolved transport in a quantum wire (QW) under the modulation of both Rashba spin-orbit coupling (SOC) and a perpendicular magnetic field by using the developed Usuki transfer-matrix method in combination with the Landauer-Büttiker formalism. Wide spin filtering energy windows can be achieved in this system for unpolarized spin injection. In addition, both the width of energy window and the magnitude of spin conductance within these energy windows can be tuned by varying Rashba SOC strength, which can be apprehended by analyzing the energy dispersions and spin-polarized density distributions inside the QW, respectively. Further study also demonstrates that these Rashba-SOC-controlled spin filtering energy windows show a strong robustness against disorders. These findings may not only benefit to further understand the spin-dependent transport properties of a QW in the presence of external fields but also provide a theoretical instruction to design a spin filter device.

Field dependence of the electron spin relaxation in quantum dots.

Science.gov (United States)

Calero, Carlos; Chudnovsky, E M; Garanin, D A

2005-10-14

The interaction of the electron spin with local elastic twists due to transverse phonons is studied. The universal dependence of the spin-relaxation rate on the strength and direction of the magnetic field is obtained in terms of the electron gyromagnetic tensor and macroscopic elastic constants of the solid. The theory contains no unknown parameters and it can be easily tested in experiment. At high magnetic field it provides a parameter-free lower bound on the electron spin relaxation in quantum dots.

Spin-dependent Nucleon Structure Studies at MIT/Bates

International Nuclear Information System (INIS)

Botto, T.

2005-01-01

We present preliminary results from recent measurements of the proton, neutron and deuterium electro-magnetic form factors obtained by the BLAST collaboration at the MIT/Bates Linear Accelerator Facility. BLAST (Bates Large Acceptance Spectrometer Toroid) is a large-acceptance multi-purpose detector dedicated to studies of exclusive spin-dependent electron scattering from internal polarized targets. BLAST makes use of stored electron beam currents in excess of 150 mA with a 60-70% polarization. The electron beam is let through a 15 mm diameter, 60 cm long open-ended storage cell which is fed with ultra-pure, high-polarization H1,D1 gas from an Atomic Beam Source. The target polarization can be rapidly reversed between different vector and tensor target states, thus minimizing systematic uncertainties. The target spin can be oriented to any in-plane direction via a set of Helmholtz coils. Target polarizations in the storage cell of up to 80% (vector) and 70% (tensor) have been routinely achieved over a period of several months. Our data on the D-vector(e-vector,e'n) reaction off vector polarized deuterium allow for a unique extraction of the neutron charge form factor G E n . At same time, complementary measurements of G M n , T20 and the spin-dependent nucleon momentum distributions in deuterium are obtained via the D-vector(e-vector,e'), D (e-vector,e'd) and D (e-vector,e'p) reactions. In addition, BLAST data on vector polarized hydrogen will provide novel measurements of the GE/GM form-factor ratio on the proton as well as of the spin-dependent electro-excitation of the Δ(1232) resonance. Such comprehensive program on few body physics is now well underway and preliminary data will be presented

Spinning gravitating objects in the effective field theory in the post-Newtonian scheme

Energy Technology Data Exchange (ETDEWEB)

Levi, Michele [Université Pierre et Marie Curie-Paris VI, CNRS-UMR 7095,Institut d’Astrophysique de Paris, 98 bis Boulevard Arago, 75014 Paris (France); Sorbonne Universités, Institut Lagrange de Paris,98 bis Boulevard Arago, 75014 Paris (France); Steinhoff, Jan [Max-Planck-Institute for Gravitational Physics (Albert-Einstein-Institute),Am Mühlenberg 1, 14476 Potsdam-Golm (Germany); Centro Multidisciplinar de Astrofisica, Instituto Superior Tecnico, Universidade de Lisboa,Avenida Rovisco Pais 1, 1049-001 Lisboa (Portugal)

2015-09-30

We introduce a formulation for spinning gravitating objects in the effective field theory in the post-Newtonian scheme in the context of the binary inspiral problem. We aim at an effective action, where all field modes below the orbital scale are integrated out. We spell out the relevant degrees of freedom, in particular the rotational ones, and the associated symmetries. Building on these symmetries, we introduce the minimal coupling part of the point particle action in terms of gauge rotational variables, and construct the spin-induced nonminimal couplings, where we obtain the leading order couplings to all orders in spin. We specify the gauge for the rotational variables, where the unphysical degrees of freedom are eliminated already from the Feynman rules, and all the orbital field modes are integrated out. The equations of motion of the spin can be directly obtained via a proper variation of the action, and Hamiltonians may be straightforwardly derived. We implement this effective field theory for spin to derive all spin dependent potentials up to next-to-leading order to quadratic level in spin, namely up to the third post-Newtonian order for rapidly rotating compact objects. In particular, the proper next-to-leading order spin-squared potential and Hamiltonian for generic compact objects are also derived. For the implementations we use the nonrelativistic gravitational field decomposition, which is found here to eliminate higher-loop Feynman diagrams also in spin dependent sectors, and facilitates derivations. This formulation for spin is thus ideal for treatment of higher order spin dependent sectors.

Strong spin-filtering and spin-valve effects in a molecular V-C-60-V contact

DEFF Research Database (Denmark)

Koleini, Mohammad; Brandbyge, Mads

2012-01-01

Motivated by the recent achievements in the manipulation of C-60 molecules in STM experiments, we study theoretically the structure and electronic properties of a C-60 molecule in an STM tunneljunction with a magnetic tip and magnetic adatom on a Cu(111) surface using first-principles calculations....... For the case of a vanadium tip/adatom, we demonstrate how spin coupling between the magnetic V atoms, mediated by the C-60, can be observed in the electronic transport, which display a strong spin-filtering effect, allowing mainly majority-spin electrons to pass (>95%). Moreover, we find a significant change...... in the conductance between parallel and anti-parallel spin polarizations in the junction (86%) which suggests that STM experiments should be able to characterize the magnetism and spin coupling for these systems....

The influence of interface on spin pumping effect in Ni80Fe20 /Tb bilayer

Directory of Open Access Journals (Sweden)

Jinjin Yue

2016-05-01

Full Text Available Focusing on the interface effect of the Ni80Fe20 (Py/terbium (Tb bilayer, the influence of interface on the magnetization dynamic damping is investigated systematically. Two series of Py (12 nm/Tb (d nm films with and without copper (Cu (1 nm interlayer are deposited on silicon (Si substrates by DC magnetron sputtering at room temperature. From vibrating sample magnetometer (VSM measurements, the saturation magnetization (Ms decreases with increasing Tb thickness in Py/Tb bilayer while the decrease of Ms is suppressed efficiently by inserting a Cu layer with even 1 nm of thickness. From the frequency dependence of ferromagnetic resonance (FMR linewidth, we can obtain the Gilbert damping coefficient (α, α is found to exhibit an extreme enhancement in comparison to the single Py layer and shows an increasing trend with increasing Tb thickness. By inserting the Cu layer, α decreases significantly. From theoretical fitting, the spin diffusion length (λSD and spin mixing conductance (g↑↓ are determined. It shows that the interface structure influences the spin mixing conductance but not the spin diffusion length.

Antiferromagnetic spin phase transition in nuclear matter with effective Gogny interaction

International Nuclear Information System (INIS)

Isayev, A.A.; Yang, J.

2004-01-01

The possibility of ferromagnetic and antiferromagnetic phase transitions in symmetric nuclear matter is analyzed within the framework of a Fermi liquid theory with the effective Gogny interaction. It is shown that at some critical density nuclear matter with the D1S effective force undergoes a phase transition to the antiferromagnetic spin state (opposite directions of neutron and proton spins). The self-consistent equations of spin polarized nuclear matter with the D1S force have no solutions corresponding to ferromagnetic spin ordering (the same direction of neutron and proton spins) and, hence, the ferromagnetic transition does not appear. The dependence of the antiferromagnetic spin polarization parameter as a function of density is found at zero temperature

Magnetocaloric effect in quantum spin-s chains

Directory of Open Access Journals (Sweden)

A. Honecker

2009-01-01

Full Text Available We compute the entropy of antiferromagnetic quantum spin-s chains in an external magnetic field using exact diagonalization and Quantum Monte Carlo simulations. The magnetocaloric effect, i. e., temperature variations during adiabatic field changes, can be derived from the isentropes. First, we focus on the example of the spin-s=1 chain and show that one can cool by closing the Haldane gap with a magnetic field. We then move to quantum spin-s chains and demonstrate linear scaling with s close to the saturation field. In passing, we propose a new method to compute many low-lying excited states using the Lanczos recursion.

Charge transport in 2DEG/s-wave superconductor junction with Dresselhaus-type spin-orbit coupling

International Nuclear Information System (INIS)

Sawa, Y.; Yokoyama, T.; Tanaka, Y.

2007-01-01

We study spin-dependent charge transport in superconducting junctions. We consider ballistic two-dimensional electron gas (2DEG)/s-wave superconductor junctions with Dresselhaus-type spin-orbit coupling (DSOC). We calculate the conductance normalized by that in the normal state of superconductor in order to study the effect of DSOC in 2DEG on conductance, changing the height of insulating barrier. We find the DSOC suppresses the conductance for low insulating barrier, while it can slightly enhance the conductance for high insulating barrier. It has a reentrant dependence on DSOC for middle strength insulating barrier. The effect of DSOC is weaken as the insulating barrier becomes high

Spin-Mechatronics

Science.gov (United States)

Matsuo, Mamoru; Saitoh, Eiji; Maekawa, Sadamichi

2017-01-01

We investigate the interconversion phenomena between spin and mechanical angular momentum in moving objects. In particular, the recent results on spin manipulation and spin-current generation by mechanical motion are examined. In accelerating systems, spin-dependent gauge fields emerge, which enable the conversion from mechanical angular momentum into spins. Such a spin-mechanical effect is predicted by quantum theory in a non-inertial frame. Experiments which confirm the effect, i.e., the resonance frequency shift in nuclear magnetic resonance, the stray field measurement of rotating metals, and electric voltage generation in liquid metals, are discussed.

Transport spin dependent in nanostructures: Current and geometry effect of quantum dots in presence of spin-orbit interaction

Science.gov (United States)

Paredes-Gutiérrez, H.; Pérez-Merchancano, S. T.; Beltran-Rios, C. L.

2017-12-01

In this work, we study the quantum electron transport through a Quantum Dots Structure (QDs), with different geometries, embedded in a Quantum Well (QW). The behaviour of the current through the nanostructure (dot and well) is studied considering the orbital spin coupling of the electrons and the Rashba effect, by means of the second quantization theory and the standard model of Green’s functions. Our results show the behaviour of the current in the quantum system as a function of the electric field, presenting resonant states for specific values of both the external field and the spin polarization. Similarly, the behaviour of the current on the nanostructure changes when the geometry of the QD and the size of the same are modified as a function of the polarization of the electron spin and the potential of quantum confinement.

Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

Science.gov (United States)

Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

2017-12-01

Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

A thermal conductivity model for nanofluids including effect of the temperature-dependent interfacial layer

International Nuclear Information System (INIS)

Sitprasert, Chatcharin; Dechaumphai, Pramote; Juntasaro, Varangrat

2009-01-01

The interfacial layer of nanoparticles has been recently shown to have an effect on the thermal conductivity of nanofluids. There is, however, still no thermal conductivity model that includes the effects of temperature and nanoparticle size variations on the thickness and consequently on the thermal conductivity of the interfacial layer. In the present work, the stationary model developed by Leong et al. (J Nanopart Res 8:245-254, 2006) is initially modified to include the thermal dispersion effect due to the Brownian motion of nanoparticles. This model is called the 'Leong et al.'s dynamic model'. However, the Leong et al.'s dynamic model over-predicts the thermal conductivity of nanofluids in the case of the flowing fluid. This suggests that the enhancement in the thermal conductivity of the flowing nanofluids due to the increase in temperature does not come from the thermal dispersion effect. It is more likely that the enhancement in heat transfer of the flowing nanofluids comes from the temperature-dependent interfacial layer effect. Therefore, the Leong et al.'s stationary model is again modified to include the effect of temperature variation on the thermal conductivity of the interfacial layer for different sizes of nanoparticles. This present model is then evaluated and compared with the other thermal conductivity models for the turbulent convective heat transfer in nanofluids along a uniformly heated tube. The results show that the present model is more general than the other models in the sense that it can predict both the temperature and the volume fraction dependence of the thermal conductivity of nanofluids for both non-flowing and flowing fluids. Also, it is found to be more accurate than the other models due to the inclusion of the effect of the temperature-dependent interfacial layer. In conclusion, the present model can accurately predict the changes in thermal conductivity of nanofluids due to the changes in volume fraction and temperature for

Analytical theory and possible detection of the ac quantum spin Hall effect.

Science.gov (United States)

Deng, W Y; Ren, Y J; Lin, Z X; Shen, R; Sheng, L; Sheng, D N; Xing, D Y

2017-07-11

We develop an analytical theory of the low-frequency ac quantum spin Hall (QSH) effect based upon the scattering matrix formalism. It is shown that the ac QSH effect can be interpreted as a bulk quantum pumping effect. When the electron spin is conserved, the integer-quantized ac spin Hall conductivity can be linked to the winding numbers of the reflection matrices in the electrodes, which also equal to the bulk spin Chern numbers of the QSH material. Furthermore, a possible experimental scheme by using ferromagnetic metals as electrodes is proposed to detect the topological ac spin current by electrical means.

Tunneling conductance oscillations in spin-orbit coupled metal-insulator-superconductor junctions

Science.gov (United States)

Kapri, Priyadarshini; Basu, Saurabh

2018-01-01

The tunneling conductance for a device consisting of a metal-insulator-superconductor (MIS) junction is studied in presence of Rashba spin-orbit coupling (RSOC) via an extended Blonder-Tinkham-Klapwijk formalism. We find that the tunneling conductance as a function of an effective barrier potential that defines the insulating layer and lies intermediate to the metallic and superconducting electrodes, displays an oscillatory behavior. The tunneling conductance shows high sensitivity to the RSOC for certain ranges of this potential, while it is insensitive to the RSOC for others. Additionally, when the period of oscillations is an odd multiple of a certain value of the effective potential, the conductance spectrum as a function of the biasing energy demonstrates a contrasting trend with RSOC, compared to when it is not an odd multiple. The explanations for the observation can be found in terms of a competition between the normal and Andreev reflections. Similar oscillatory behavior of the conductance spectrum is also seen for other superconducting pairing symmetries, thereby emphasizing that the insulating layer plays a decisive role in the conductance oscillations of a MIS junction. For a tunable Rashba coupling, the current flowing through the junction can be controlled with precision.

Thermoelectric effects and spin injection into superconductors with exchange field

Energy Technology Data Exchange (ETDEWEB)

Heikkilae, Tero [Dept. Phys., Univ. Jyvaeskylae (Finland); Silaev, Mihail [O.V. Lounasmaa Lab, Aalto Univ. (Finland); Dept. Theor. Physics, KTH, Stockholm (Sweden); Virtanen, Pauli [O.V. Lounasmaa Lab, Aalto Univ. (Finland); Giazotto, Francesco [NEST CNR-INFM and SNS Pisa (Italy); Ozaeta, Asier; Bergeret, Sebastian [CFM-CSIC and DIPC, San Sebastian (Spain)

2015-07-01

When a thin superconducting film is exposed to a longitudinal magnetic field or is in proximity to a ferromagnet, an exchange field separating the spin bands emerges in it. For low enough exchange fields superconductivity survives, but its response to external driving is strongly modified. In my talk I will show how at linear response such systems exhibit very strong thermoelectric response with an almost ideal efficiency. For strong driving, this effect creates a spin accumulation that can only relax via thermalization, and therefore at low temperatures has a very long range. Therefore our work explains recent observations of the long-range spin accumulation in spin-split superconductors. When injecting spin from injectors with non-collinear magnetization compared to the exchange field, the spins start to rotate around the latter. I will describe how superconductivity modifies this spin Hanle effect so that the resulting nonlocal magnetoresistance depends on the details of spin relaxation, therefore allowing for probing them.

Large-scale nuclear structure calculations for spin-dependent WIMP scattering with chiral effective field theory currents

OpenAIRE

Klos, P.; Menéndez, J.; Gazit, D.; Schwenk, A.

2013-01-01

We perform state-of-the-art large-scale shell-model calculations of the structure factors for elastic spin-dependent WIMP scattering off 129,131Xe, 127I, 73Ge, 19F, 23Na, 27Al, and 29Si. This comprehensive survey covers the non-zero-spin nuclei relevant to direct dark matter detection. We include a pedagogical presentation of the formalism necessary to describe elastic and inelastic WIMP-nucleus scattering. The valence spaces and nuclear interactions employed have been previously used in nucl...

Tuning the effective spin-orbit coupling in molecular semiconductors

KAUST Repository

Schott, Sam

2017-05-11

The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven difficult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high-mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g-shifts to spin-lattice relaxation times over four orders of magnitude, from 200 to 0.15 μs, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.

Tuning the effective spin-orbit coupling in molecular semiconductors

KAUST Repository

Schott, Sam; McNellis, Erik R.; Nielsen, Christian B.; Chen, Hung-Yang; Watanabe, Shun; Tanaka, Hisaaki; McCulloch, Iain; Takimiya, Kazuo; Sinova, Jairo; Sirringhaus, Henning

2017-01-01

The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven difficult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high-mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g-shifts to spin-lattice relaxation times over four orders of magnitude, from 200 to 0.15 μs, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.

Spin heat accumulation induced by tunneling from a ferromagnet.

Science.gov (United States)

Vera-Marun, I J; van Wees, B J; Jansen, R

2014-02-07

An electric current from a ferromagnet into a nonmagnetic material can induce a spin-dependent electron temperature. Here, it is shown that this spin heat accumulation, when created by tunneling from a ferromagnet, produces a non-negligible voltage signal that is comparable to that due to the coexisting electrical spin accumulation and can give a different Hanle spin precession signature. The effect is governed by the spin polarization of the Peltier coefficient of the tunnel contact, its Seebeck coefficient, and the spin heat resistance of the nonmagnetic material, which is related to the electrical spin resistance by a spin-Wiedemann-Franz law. Moreover, spin heat injection is subject to a heat conductivity mismatch that is overcome if the tunnel interface has a sufficiently large resistance.

Effect of nanostructure layout on spin pumping phenomena in antiferromagnet/nonmagnetic metal/ferromagnet multilayered stacks

Directory of Open Access Journals (Sweden)

A. F. Kravets

2017-05-01

Full Text Available In this work we focus on magnetic relaxation in Mn80Ir20(12 nm/Cu(6 nm/Py(dF antiferromagnet/Cu/ferromagnet (AFM/Cu/FM multilayers with different thickness of the ferromagnetic permalloy layer. An effective FM-AFM interaction mediated via the conduction electrons in the nonmagnetic Cu spacer – the spin-pumping effect – is detected as an increase in the linewidth of the ferromagnetic resonance (FMR spectra and a shift of the resonant magnetic field. We further find experimentally that the spin-pumping-induced contribution to the linewidth is inversely proportional to the thickness of the Py layer. We show that this thickness dependence likely originates from the dissipative dynamics of the free and localized spins in the AFM layer. The results obtained could be used for tailoring the dissipative properties of spintronic devices incorporating antiferromagnetic layers.

QED approach to the nuclear spin-spin coupling tensor

International Nuclear Information System (INIS)

Romero, Rodolfo H.; Aucar, Gustavo A.

2002-01-01

A quantum electrodynamical approach for the calculation of the nuclear spin-spin coupling tensor of nuclear-magnetic-resonance spectroscopy is given. Quantization of radiation fields within the molecule is considered and expressions for the magnetic field in the neighborhood of a nucleus are calculated. Using a generalization of time-dependent response theory, an effective spin-spin interaction is obtained from the coupling of nuclear magnetic moments to a virtual quantized magnetic field. The energy-dependent operators obtained reduce to usual classical-field expressions at suitable limits

Charge and spin separation in one-dimensional systems

International Nuclear Information System (INIS)

Balseiro, C.A.; Jagla, E.A.; Hallberg, K.

1995-01-01

In this article we discuss charge and spin separation and quantum interference in one-dimensional models. After a short introduction we briefly present the Hubbard and Luttinger models and discuss some of the known exact results. We study numerically the charge and spin separation in the Hubbard model. The time evolution of a wave packet is obtained and the charge and spin densities are evaluated for different times. The charge and spin wave packets propagate with different velocities. The results are interpreted in terms of the Bethe-ansatz solution. In section IV we study the effect of charge and spin separation on the quantum interference in a Aharonov-Bohm experiment. By calculating the one-particle propagators of the Luttinger model for a mesoscopic ring with a magnetic field we calculate the Aharonov-Bohm conductance. The conductance oscillates with the magnetic field with a characteristic frequency that depends on the charge and spin velocities. (author)

Intrinsic anharmonic effects on the phonon frequencies and effective spin-spin interactions in a quantum simulator made from trapped ions in a linear Paul trap

Science.gov (United States)

McAneny, M.; Freericks, J. K.

2014-11-01

The Coulomb repulsion between ions in a linear Paul trap gives rise to anharmonic terms in the potential energy when expanded about the equilibrium positions. We examine the effect of these anharmonic terms on the accuracy of a quantum simulator made from trapped ions. To be concrete, we consider a linear chain of Yb171+ ions stabilized close to the zigzag transition. We find that for typical experimental temperatures, frequencies change by no more than a factor of 0.01 % due to the anharmonic couplings. Furthermore, shifts in the effective spin-spin interactions (driven by a spin-dependent optical dipole force) are also, in general, less than 0.01 % for detunings to the blue of the transverse center-of-mass frequency. However, detuning the spin interactions near other frequencies can lead to non-negligible anharmonic contributions to the effective spin-spin interactions. We also examine an odd behavior exhibited by the harmonic spin-spin interactions for a range of intermediate detunings, where nearest-neighbor spins with a larger spatial separation on the ion chain interact more strongly than nearest neighbors with a smaller spatial separation.

Fragility of the fractional quantum spin Hall effect in quantum gases

International Nuclear Information System (INIS)

Fialko, O; Brand, J; Zülicke, U

2014-01-01

We consider the effect of contact interaction in a prototypical quantum spin Hall system of pseudo-spin-1/2 particles. A strong effective magnetic field with opposite directions for the two spin states restricts two-dimensional particle motion to the lowest Landau level. While interaction between same-spin particles leads to incompressible correlated states at fractional filling factors as known from the fractional quantum Hall effect, these states are destabilized by interactions between opposite spin particles. Exact results for two particles with opposite spin reveal a quasi-continuous spectrum of extended states with a large density of states at low energy. This has implications for the prospects of realizing the fractional quantum spin Hall effect in electronic or ultra-cold atom systems. Numerical diagonalization is used to extend the two-particle results to many bosonic particles and trapped systems. The interplay between an external trapping potential and spin-dependent interactions is shown to open up new possibilities for engineering exotic correlated many-particle states with ultra-cold atoms. (paper)

Determination of the Pt spin diffusion length by spin-pumping and spin Hall effect

Energy Technology Data Exchange (ETDEWEB)

Zhang, Wei; Pearson, John E.; Hoffmann, Axel [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Vlaminck, Vincent [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Colegio de Ciencias e Ingenería, Universidad San Fransciso de Quito, Quito (Ecuador); Divan, Ralu [Center for Nanoscale Materials, Argonne National Laboratory, Illinois 60439 (United States); Bader, Samuel D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Center for Nanoscale Materials, Argonne National Laboratory, Illinois 60439 (United States)

2013-12-09

The spin diffusion length of Pt at room temperature and at 8 K is experimentally determined via spin pumping and spin Hall effect in permalloy/Pt bilayers. Voltages generated during excitation of ferromagnetic resonance from the inverse spin Hall effect and anisotropic magnetoresistance effect were investigated with a broadband approach. Varying the Pt layer thickness gives rise to an evolution of the voltage line shape due to the superposition of the above two effects. By studying the ratio of the two voltage components with the Pt layer thickness, the spin diffusion length of Pt can be directly extracted. We obtain a spin diffusion length of ∼1.2 nm at room temperature and ∼1.6 nm at 8 K.

Unusual Thermal Hall Effect in a Kitaev Spin Liquid Candidate α -RuCl3

Science.gov (United States)

Kasahara, Y.; Sugii, K.; Ohnishi, T.; Shimozawa, M.; Yamashita, M.; Kurita, N.; Tanaka, H.; Nasu, J.; Motome, Y.; Shibauchi, T.; Matsuda, Y.

2018-05-01

The Kitaev quantum spin liquid displays the fractionalization of quantum spins into Majorana fermions. The emergent Majorana edge current is predicted to manifest itself in the form of a finite thermal Hall effect, a feature commonly discussed in topological superconductors. Here we report on thermal Hall conductivity κx y measurements in α -RuCl3 , a candidate Kitaev magnet with the two-dimensional honeycomb lattice. In a spin-liquid (Kitaev paramagnetic) state below the temperature characterized by the Kitaev interaction JK/kB˜80 K , positive κx y develops gradually upon cooling, demonstrating the presence of highly unusual itinerant excitations. Although the zero-temperature property is masked by the magnetic ordering at TN=7 K , the sign, magnitude, and T dependence of κx y/T at intermediate temperatures follows the predicted trend of the itinerant Majorana excitations.

Large spin accumulation due to spin-charge coupling across a break-junction

Science.gov (United States)

Chen, Shuhan; Zou, Han; Chui, Siu-Tat; Ji, Yi

2013-03-01

We investigate large spin signals in break-junction nonlocal spin valves (NLSV). The break-junction is a nanometer-sized vacuum tunneling gap between the spin detector and the nonmagnetic channel, formed by electro-static discharge. The spin signals can be either inverted or non-inverted and the magnitudes are much larger than those of standard NLSV. Spin signals with high percentage values (10% - 0%) have been observed. When the frequency of the a.c. modulation is varied, the absolute magnitudes of signals remain the same although the percentage values change. These observations affirm the nonlocal nature of the measurements and rule out local magnetoresistive effects. Owing to the spin-charge coupling across the break-junction, the spin accumulation in a ferromagnet splits into two terms. One term decays on the charge screening length (0.1 nm) and the other decays on the spin diffusion length (10 nm nm). The magnitude of the former is proportional to the resistance of the junction. Therefore a highly resistive break-junction leads to a large spin accumulation and thereby a large spin signal. The signs of the spin signal are determined by the relationship between spin-dependent conductivities, diffusion constants, and density of states of the ferromagnet. This work was supported by US DOE grant No. DE-FG02-07ER46374.

Coherent and correlated spin transport in nanoscale superconductors

Energy Technology Data Exchange (ETDEWEB)

Morten, Jan Petter

2008-03-15

Motivated by the desire for better understanding of nano electronic systems, we theoretically study the conductance and noise characteristics of current flow between superconductors, ferromagnets, and normal-metals. Such nano structures can reveal information about superconductor proximity effects, spin-relaxation processes, and spintronic effects with potential applications for different areas of mesoscopic physics. We employ the quasiclassical theory of superconductivity in the Keldysh formalism, and calculate the nonequilibrium transport of spin and charge using various approaches like the circuit theory of quantum transport and full counting statistics. For two of the studied structures, we have been able to compare our theory to experimental data and obtain good agreement. Transport and relaxation of spin polarized current in superconductors is governed by energy-dependent transport coefficients and spin-flip rates which are determined by quantum interference effects. We calculate the resulting temperature-dependent spin flow in ferromagnet-superconductor devices. Experimental data for spin accumulation and spin relaxation in a superconducting nano wire is in agreement with the theory, and allows for a spin-flip spectroscopy that determines the dominant mechanism for spin-flip relaxation in the studied samples. A ferromagnet precessing under resonance conditions can give rise to pure spin current injection into superconductors. We find that the absorbed spin current is measurable as a temperature dependent Gilbert damping, which we calculate and compare to experimental data. Crossed Andreev reflection denotes superconducting pairing of electrons flowing from different normal-metal or ferromagnet terminals into a superconductor. We calculate the nonlocal currents resulting from this process in competition with direct electron transport between the normal-metal terminals. We take dephasing into account, and study the nonlocal current when the types of contact in

Impurity-induced tuning of quantum-well States in spin-dependent resonant tunneling.

Science.gov (United States)

Kalitsov, Alan; Coho, A; Kioussis, Nicholas; Vedyayev, Anatoly; Chshiev, M; Granovsky, A

2004-07-23

We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization, and the local current can be dramatically enhanced or suppressed by impurities. The underlying mechanism is the impurity-induced shift of the quantum well states (QWSs), which depends on the impurity potential, impurity position, and the symmetry of the QWS. Copyright 2004 The American Physical Society

Electrical detection of magnetization dynamics via spin rectification effects

Energy Technology Data Exchange (ETDEWEB)

Harder, Michael, E-mail: michael.harder@umanitoba.ca; Gui, Yongsheng, E-mail: ysgui@physics.umanitoba.ca; Hu, Can-Ming, E-mail: hu@physics.umanitoba.ca

2016-11-23

The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro and nanostructured devices that enable electrical detection of magnetization dynamics. The primary focus is on the physics of spin rectification effects, which are well suited for studying magnetization dynamics and spin transport in a variety of magnetic materials and spintronic devices. Intended to be intelligible to a broad audience, the paper begins with a pedagogical introduction, comparing the methods of electrical detection of charge and spin dynamics in semiconductors and magnetic materials respectively. After that it provides a comprehensive account of the theoretical study of both the angular dependence and line shape of electrically detected ferromagnetic resonance (FMR), which is summarized in a handbook format easy to be used for analysing experimental data. We then review and examine the similarity and differences of various spin rectification effects found in ferromagnetic films, magnetic bilayers and magnetic tunnel junctions, including a discussion of how to properly distinguish spin rectification from the spin pumping/inverse spin Hall effect generated voltage. After this we review the broad applications of rectification effects for studying spin waves, nonlinear dynamics, domain wall dynamics, spin current, and microwave imaging. We also discuss spin rectification in ferromagnetic semiconductors. The paper concludes with both historical and future perspectives, by summarizing and comparing three generations of FMR spectroscopy which have been developed for studying magnetization dynamics.

A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

Science.gov (United States)

van't Erve, Olaf

2014-03-01

New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin

Thickness dependence of the triplet spin-valve effect in superconductor-ferromagnet heterostructures

Energy Technology Data Exchange (ETDEWEB)

Lenk, Daniel; Zdravkov, Vladimir I.; Kehrle, Jan; Obermeier, Guenther; Krug von Nidda, Hans-Albrecht; Mueller, Claus; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Sidorenko, Anatolie S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Tagirov, Lenar [Solid State Physics Department, Kazan Federal University (Russian Federation)

2015-07-01

We investigated the triplet spin-valve effect in nanoscale layered S/F{sub 1}/N/F{sub 2}/AF heterostructures with varying F{sub 1}-layer thickness (where S=Nb is a singlet superconducting, F{sub 1}=Cu{sub 41}Ni{sub 59} and F{sub 2}=Co a ferromagnetic, and N a normal-conducting, non-magnetic layer). The theory predicts a long-range, odd-in-frequency triplet component of superconductivity at non-collinear alignment of the magnetizations of F{sub 1} and F{sub 2}. This triplet component exhausts the singlet state and, thus, lowers the superconducting transition temperature, T{sub c}, yielding a global minimum of T{sub c} close to the perpendicular mutual orientations of the magnetizations. We found an oscillating decay of T{sub c} suppression, due to the generation of the triplet component, with increasing F{sub 1} layer thickness, which we discuss in the framework of recent theories.

Composition-dependent magnetic response properties of Mn1 -xFexGe alloys

Science.gov (United States)

Mankovsky, S.; Wimmer, S.; Polesya, S.; Ebert, H.

2018-01-01

The composition-dependent behavior of the Dzyaloshinskii-Moriya interaction (DMI), the spin-orbit torque (SOT), as well as anomalous and spin Hall conductivities of Mn1 -xFexGe alloys have been investigated by first-principles calculations using the relativistic multiple scattering Korringa-Kohn-Rostoker (KKR) formalism. The Dxx component of the DMI exhibits a strong dependence on the Fe concentration, changing sign at x ≈0.85 in line with previous theoretical calculations as well as with experimental results demonstrating the change of spin helicity at x ≈0.8 . A corresponding behavior with a sign change at x ≈0.5 is predicted also for the Fermi-sea contribution to the SOT, because this is closely related to the DMI. In the case of anomalous and spin Hall effects it is shown that the calculated Fermi-sea contributions are rather small and the composition-dependent behavior of these effects are determined mainly by the electronic states at the Fermi level. The spin-orbit-induced scattering mechanisms responsible for both these effects suggest a common origin of the minimum of the anomalous Hall effect and the sign change of the spin Hall effect conductivities.

Ab initio study of spin-dependent transport in carbon nanotubes with iron and vanadium adatoms

DEFF Research Database (Denmark)

Fürst, Joachim Alexander; Brandbyge, Mads; Jauho, Antti-Pekka

2008-01-01

(majority or minority) being scattered depends on the adsorbate and is explained in terms of d-state filling. We contrast the single-walled carbon nanotube results to the simpler case of the adsorbate on a flat graphene sheet with periodic boundary conditions and corresponding width in the zigzag direction......We present an ab initio study of spin-dependent transport in armchair carbon nanotubes with transition metal adsorbates: iron or vanadium. The method based on density functional theory and nonequilibrium Green's functions is used to compute the electronic structure and zero-bias conductance...

Heat Transport in Gapped Spin-Chain Systems

International Nuclear Information System (INIS)

Shimshoni, E.

2006-01-01

Full Text: We study the contribution of magnetic excitations to the heat transport in gapped spin-chain systems. These systems are characterized by a substantially enhanced heat conductivity, which can be traced back to the existence of weakly violated conservation laws. We focus particularly on the behavior of clean two-leg spin ladder compounds, where one-dimensional exotic spin excitations are coupled to three-dimensional phonons. We show that the contributions of the two types of heat carriers can not be easily disentangled. Depending on the ratios of spin gaps and the Debye energy, the heat conductivity can be either exponentially increasing or exponentially decreasing as a function of temperature (T). In addition, the magnetic contribution to the total heat conductivity may be either positive or negative. We discuss its T-dependence in various possible regimes, and note that in most regimes it is dominated by spin-phonon drag: the two types of heat carriers have almost the

Strong spin-filtering and spin-valve effects in a molecular V–C60–V contact

Directory of Open Access Journals (Sweden)

Mohammad Koleini

2012-08-01

Full Text Available Motivated by the recent achievements in the manipulation of C60 molecules in STM experiments, we study theoretically the structure and electronic properties of a C60 molecule in an STM tunneljunction with a magnetic tip and magnetic adatom on a Cu(111 surface using first-principles calculations. For the case of a vanadium tip/adatom, we demonstrate how spin coupling between the magnetic V atoms, mediated by the C60, can be observed in the electronic transport, which display a strong spin-filtering effect, allowing mainly majority-spin electrons to pass (>95%. Moreover, we find a significant change in the conductance between parallel and anti-parallel spin polarizations in the junction (86% which suggests that STM experiments should be able to characterize the magnetism and spin coupling for these systems.

Reversible spin texture in ferroelectric Hf O2

Science.gov (United States)

Tao, L. L.; Paudel, Tula R.; Kovalev, Alexey A.; Tsymbal, Evgeny Y.

2017-06-01

Spin-orbit coupling effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible a nonvolatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, Hf O2 , which has been shown to exhibit robust ferroelectricity in a noncentrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric Hf O2 and demonstrate the appearance of chiral spin textures driven by spin-orbit coupling. We analyze these spin configurations in terms of the Rashba and Dresselhaus effects within the k .p Hamiltonian model and find that the Rashba-type spin texture dominates around the valence-band maximum, while the Dresselhaus-type spin texture prevails around the conduction band minimum. The latter is characterized by a very large Dresselhaus constant λD= 0.578 eV Å, which allows using this material as a tunnel barrier to produce tunneling anomalous and spin Hall effects that are reversible by ferroelectric polarization.

Spin Seebeck effect in insulating epitaxial γ−Fe2O3 thin films

Directory of Open Access Journals (Sweden)

P. Jiménez-Cavero

2017-02-01

Full Text Available We report the fabrication of high crystal quality epitaxial thin films of maghemite (γ−Fe2O3, a classic ferrimagnetic insulating iron oxide. Spin Seebeck effect (SSE measurements in γ−Fe2O3/Pt bilayers as a function of sample preparation conditions and temperature yield a SSE coefficient of 0.5(1 μV/K at room temperature. Dependence on temperature allows us to estimate the magnon diffusion length in maghemite to be in the range of tens of nanometers, in good agreement with that of conducting iron oxide magnetite (Fe3O4, establishing the relevance of spin currents of magnonic origin in magnetic iron oxides.

Spin relaxation through Kondo scattering in Cu/Py lateral spin valves

Science.gov (United States)

Batley, J. T.; Rosaond, M. C.; Ali, M.; Linfield, E. H.; Burnell, G.; Hickey, B. J.

Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to govern spin-relaxation and thus the temperature dependence of the spin diffusion length might be inversely proportional to resistivity. However, in lateral spin valves, measurements have found that at low temperatures the spin diffusion length unexpectedly decreases. We have fabricated lateral spin valves from Cu with different concentrations of magnetic impurities. Through temperature dependent charge and spin transport measurements we present clear evidence linking the presence of the Kondo effect within Cu to the suppression of the spin diffusion length below 30 K. We have calculated the spin-relaxation rate and isolated the contribution from magnetic impurities. At very low temperatures electron-electron interactions play a more prominent role in the Kondo effect. Well below the Kondo temperature a strong-coupling regime exists, where the moments become screened and the magnetic dephasing rate is reduced. We also investigate the effect of this low temperature regime (>1 K) on a pure spin current. This work shows the dominant role of Kondo scattering, even in low concentrations of order 1 ppm, within pure spin transport.

Bottom quark contribution to spin-dependent dark matter detection

Directory of Open Access Journals (Sweden)

Jinmian Li

2016-05-01

Full Text Available We investigate a previously overlooked bottom quark contribution to the spin-dependent cross section for Dark Matter (DM scattering from the nucleon. While the mechanism is relevant to any supersymmetric extension of the Standard Model, for illustrative purposes we explore the consequences within the framework of the Minimal Supersymmetric Standard Model (MSSM. We study two cases, namely those where the DM is predominantly Gaugino or Higgsino. In both cases, there is a substantial, viable region in parameter space (mb˜−mχ≲O(100 GeV in which the bottom contribution becomes important. We show that a relatively large contribution from the bottom quark is consistent with constraints from spin-independent DM searches, as well as some incidental model dependent constraints.

Separating inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

Energy Technology Data Exchange (ETDEWEB)

Zhang, Wenxu, E-mail: xwzhang@uestc.edu.cn; Peng, Bin; Han, Fangbin; Wang, Qiuru; Zhang, Wanli [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Soh, Wee Tee; Ong, Chong Kim [Center for Superconducting and Magnetic Materials, Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore)

2016-03-07

We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from the spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, the inversion of the spin injection direction changes the ISHE voltage signal, while the SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range and has the flexibility of sample preparation.

Morphology, conductivity, and wetting characteristics of PEDOT:PSS thin films deposited by spin and spray coating

Energy Technology Data Exchange (ETDEWEB)

Zabihi, F.; Xie, Y.; Gao, S.; Eslamian, M., E-mail: Morteza.Eslamian@sjtu.edu.cn

2015-05-30

Highlights: • Nanostructure of spun-on and spray-on PEDOT:PSS thin films is studied. • A correlation is established between the film nanostructure and electrical conductivity. • Effect of process parameters is studied on the film characteristics. • A high solution concentration, high process temperature and multiple deposition layers are recommended. - Abstract: The goal of this paper is to study the characteristics of PEDOT:PSS thin films and the effects of varying the processing parameters on the structure, functionality, and surface wetting of spun-on and spray-on PEDOT:PSS thin films. PEDOT:PSS is a polymer mixture, which is electrically conductive and transparent and, therefore, is an attractive material for some optoelectronic applications, such as organic and perovskite solar cells. In this work, the films are fabricated using spin coating (a lab-scale method) and spray coating (an up-scalable method). The effects of spinning speed, drying time, and post-annealing temperature on spun-on samples and the effects of the substrate temperature and number of spray passes (deposition layers) on spray-on samples, as well as the effect of precursor solution concentration on both cases are investigated. Various characterization tools, such as AFM, SEM, XRD, confocal laser scanning microscopy (CLSM), and electrical conductivity measurements are used to determine the film roughness, thickness, structure, and morphology. The solution precursor physical data, such as contact angle on glass substrates, viscosity, and interfacial tension, are also obtained within a practical range of temperatures and concentrations. It is found that in both spin and spray coating routes, only well-controlled operating conditions result in the formation of conductive and defect-free PEDOT:PSS films. The formation of PEDOT:PSS thin films with small grains composed of PEDOT forming the core of the grains and PSS forming a shell or coating, which are evenly distributed in a PSS

Morphology, conductivity, and wetting characteristics of PEDOT:PSS thin films deposited by spin and spray coating

International Nuclear Information System (INIS)

Zabihi, F.; Xie, Y.; Gao, S.; Eslamian, M.

2015-01-01

Highlights: • Nanostructure of spun-on and spray-on PEDOT:PSS thin films is studied. • A correlation is established between the film nanostructure and electrical conductivity. • Effect of process parameters is studied on the film characteristics. • A high solution concentration, high process temperature and multiple deposition layers are recommended. - Abstract: The goal of this paper is to study the characteristics of PEDOT:PSS thin films and the effects of varying the processing parameters on the structure, functionality, and surface wetting of spun-on and spray-on PEDOT:PSS thin films. PEDOT:PSS is a polymer mixture, which is electrically conductive and transparent and, therefore, is an attractive material for some optoelectronic applications, such as organic and perovskite solar cells. In this work, the films are fabricated using spin coating (a lab-scale method) and spray coating (an up-scalable method). The effects of spinning speed, drying time, and post-annealing temperature on spun-on samples and the effects of the substrate temperature and number of spray passes (deposition layers) on spray-on samples, as well as the effect of precursor solution concentration on both cases are investigated. Various characterization tools, such as AFM, SEM, XRD, confocal laser scanning microscopy (CLSM), and electrical conductivity measurements are used to determine the film roughness, thickness, structure, and morphology. The solution precursor physical data, such as contact angle on glass substrates, viscosity, and interfacial tension, are also obtained within a practical range of temperatures and concentrations. It is found that in both spin and spray coating routes, only well-controlled operating conditions result in the formation of conductive and defect-free PEDOT:PSS films. The formation of PEDOT:PSS thin films with small grains composed of PEDOT forming the core of the grains and PSS forming a shell or coating, which are evenly distributed in a PSS

The effect of spin in swing bowling in cricket: model trajectories for spin alone

Science.gov (United States)

Robinson, Garry; Robinson, Ian

2015-02-01

In ‘swing’ bowling, as employed by fast and fast-medium bowlers in cricket, back-spin along the line of the seam is normally applied in order to keep the seam vertical and to provide stability against ‘wobble’ of the seam. Whilst spin is normally thought of as primarily being the slow bowler's domain, the spin applied by the swing bowler has the side-effect of generating a lift or Magnus force. This force, depending on the orientation of the seam and hence that of the back-spin, can have a side-ways component as well as the expected vertical ‘lift’ component. The effect of the spin itself, in influencing the trajectory of the fast bowler's delivery, is normally not considered, presumably being thought of as negligible. The purpose of this paper is to investigate, using calculated model trajectories, the amount of side-ways movement due to the spin and to see how this predicted movement compares with the total observed side-ways movement. The size of the vertical lift component is also estimated. It is found that, although the spin is an essential part of the successful swing bowler's delivery, the amount of side-ways movement due to the spin itself amounts to a few centimetres or so, and is therefore small, but perhaps not negligible, compared to the total amount of side-ways movement observed. The spin does, however, provide a considerable amount of lift compared to the equivalent delivery bowled without spin, altering the point of pitching by up to 3 m, a very large amount indeed. Thus, for example, bowling a ball with the seam pointing directly down the pitch and not designed to swing side-ways at all, but with the amount of back-spin varied, could provide a very powerful additional weapon in the fast bowler's arsenal. So-called ‘sling bowlers’, who use a very low arm action, can take advantage of spin since effectively they can apply side-spin to the ball, giving rise to a large side-ways movement, ˜ 20{}^\\circ cm or more, which certainly is

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

International Nuclear Information System (INIS)

Kotsuki, Kenji; Tanaka, Hiroshige; Obata, Seiji; Stauss, Sven; Terashima, Kazuo; Saiki, Koichiro

2014-01-01

We have investigated the film morphology and the field effect mobility of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) thin films which were formed by spin coating on the SiO 2 substrate with solution-processed graphene electrodes. The domain size and the density of aggregates in the C8-BTBT film showed the same dependence on the spinning speed. These competitive two factors (domain size and density of aggregates) give an optimum spinning speed, at which the field effect mobility of C8-BTBT transistor showed a maximum (2.6 cm 2 /V s). This result indicates the importance of spinning speed in the fabrication of solution processed organic thin film transistors by spin coating.

Muonium spin exchange in spin-polarized media: Spin-flip and -nonflip collisions

International Nuclear Information System (INIS)

Senba, M.

1994-01-01

The transverse relaxation of the muon spin in muonium due to electron spin exchange with a polarized spin-1/2 medium is investigated. Stochastic calculations, which assume that spin exchange is a Poisson process, are carried out for the case where the electron spin polarization of the medium is on the same axis as the applied field. Two precession signals of muonium observed in intermediate fields (B>30 G) are shown to have different relaxation rates which depend on the polarization of the medium. Furthermore, the precession frequencies are shifted by an amount which depends on the spin-nonflip rate. From the two relaxation rates and the frequency shift in intermediate fields, one can determine (i) the encounter rate of muonium and the paramagnetic species, (ii) the polarization of the medium, and most importantly (iii) the quantum-mechanical phase shift (and its sign) associated with the potential energy difference between electron singlet and triplet encounters. Effects of spin-nonflip collisions on spin dynamics are discussed for non-Poisson as well as Poisson processes. In unpolarized media, the time evolution of the muon spin in muonium is not influenced by spin-nonflip collisions, if the collision process is Poissonian. This seemingly obvious statement is not true anymore in non-Poissonian processes, i.e., it is necessary to specify both spin-flip and spin-nonflip rates to fully characterize spin dynamics

Spin dependent transport of hot electrons through ultrathin epitaxial metallic films

Energy Technology Data Exchange (ETDEWEB)

Heindl, Emanuel

2010-06-23

In this work relaxation and transport of hot electrons in thin single crystalline metallic films is investigated by Ballistic Electron Emission Microscopy. The electron mean free paths are determined in an energy interval of 1 to 2 eV above the Fermi level. While fcc Au-films appear to be quite transmissive for hot electrons, the scattering lengths are much shorter for the ferromagnetic alloy FeCo revealing, furthermore, a strong spin asymmetry in hot electron transport. Additional information is gained from temperature dependent studies in combination with golden rule approaches in order to disentangle the impact of several relaxation and transport properties. It is found that bcc Fe-films are much less effective in spin filtering than films made of the FeCo-alloy. (orig.)

Determining the spin dependent mean free path in Co90Fe10 using giant magnetoresistance

Science.gov (United States)

Shakespear, K. F.; Perdue, K. L.; Moyerman, S. M.; Checkelsky, J. G.; Harberger, S. S.; Tamboli, A. C.; Carey, M. J.; Sparks, P. D.; Eckert, J. C.

2005-05-01

The spin dependent mean free path in Co90Fe10 is determined as a function of temperature down to 5K using two different spin valve structures. At 5K the spin dependent mean free path for one structure was measured to be 9.4±1.4nm, decreasing by a factor of 3 by 350K. For the other structure, it is 7.5±0.5nm at 5K and decreased by a factor of 1.5 by 350K. In both cases, the spin dependent mean free path approaches the typical thickness of ferromagnetic layers in spin valves at room temperature and, thus, has an impact on the choice of design parameters for the development of new spintronic devices.

Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

Science.gov (United States)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as the spin diffusion length then spin polarization will lead to non-equilibrium spin accumulation and emergent phase transition. In n-Si, spin diffusion length has been reported up to 6 μm. The spin accumulation in Si will modify the thermal transport behavior of Si, which can be detected with thermal characterization. In this study, we report observation of spin-Hall effect and emergent antiferromagnetic phase transition behavior using magneto-electro-thermal transport characterization. The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/MgO (1 nm)/n-Si (2 μm) thin film specimen exhibits a magnetic field dependent thermal transport and spin-Hall magnetoresistance behavior attributed to Rashba effect. An emergent phase transition is discovered using self-heating 3ω method, which shows a diverging behavior at 270 K as a function of temperature similar to a second order phase transition. We propose that spin-Hall effect leads to the spin accumulation and resulting emergent antiferromagnetic phase transition. We propose that the length scale for Rashba effect can be equal to the spin diffusion length and two-dimensional electron gas is not essential for it. The emergent antiferromagnetic phase transition is attributed to the site inversion asymmetry in diamond cubic Si lattice.

Radiation reaction for spinning bodies in effective field theory. I. Spin-orbit effects

Science.gov (United States)

Maia, Natália T.; Galley, Chad R.; Leibovich, Adam K.; Porto, Rafael A.

2017-10-01

We compute the leading post-Newtonian (PN) contributions at linear order in the spin to the radiation-reaction acceleration and spin evolution for binary systems, which enter at fourth PN order. The calculation is carried out, from first principles, using the effective field theory framework for spinning compact objects, in both the Newton-Wigner and covariant spin supplementary conditions. A nontrivial consistency check is performed on our results by showing that the energy loss induced by the resulting radiation-reaction force is equivalent to the total emitted power in the far zone, up to so-called "Schott terms." We also find that, at this order, the radiation reaction has no net effect on the evolution of the spins. The spin-spin contributions to radiation reaction are reported in a companion paper.

Electric dipole spin resonance in a quantum spin dimer system driven by magnetoelectric coupling

Science.gov (United States)

Kimura, Shojiro; Matsumoto, Masashige; Akaki, Mitsuru; Hagiwara, Masayuki; Kindo, Koichi; Tanaka, Hidekazu

2018-04-01

In this Rapid Communication, we propose a mechanism for electric dipole active spin resonance caused by spin-dependent electric polarization in a quantum spin gapped system. This proposal was successfully confirmed by high-frequency electron spin resonance (ESR) measurements of the quantum spin dimer system KCuCl3. ESR measurements by an illuminating linearly polarized electromagnetic wave reveal that the optical transition between the singlet and triplet states in KCuCl3 is driven by an ac electric field. The selection rule of the observed transition agrees with the calculation by taking into account spin-dependent electric polarization. We suggest that spin-dependent electric polarization is effective in achieving fast control of quantum spins by an ac electric field.

Spin rotation after a spin-independent scattering. Spin properties of an electron gas in a solid

International Nuclear Information System (INIS)

Zayets, V.

2014-01-01

It is shown that spin direction of an electron may not be conserved after a spin-independent scattering. The spin rotations occur due to a quantum-mechanical fact that when a quantum state is occupied by two electrons of opposite spins, the total spin of the state is zero and the spin direction of each electron cannot be determined. It is shown that it is possible to divide all conduction electrons into two group distinguished by their time-reversal symmetry. In the first group the electron spins are all directed in one direction. In the second group there are electrons of all spin directions. The number of electrons in each group is conserved after a spin-independent scattering. This makes it convenient to use these groups for the description of the magnetic properties of conduction electrons. The energy distribution of spins, the Pauli paramagnetism and the spin distribution in the ferromagnetic metals are described within the presented model. The effects of spin torque and spin-torque current are described. The origin of spin-transfer torque is explained within the presented model

Optical control of spin-dependent thermal transport in a quantum ring

Science.gov (United States)

Abdullah, Nzar Rauf

2018-05-01

We report on calculation of spin-dependent thermal transport through a quantum ring with the Rashba spin-orbit interaction. The quantum ring is connected to two electron reservoirs with different temperatures. Tuning the Rashba coupling constant, degenerate energy states are formed leading to a suppression of the heat and thermoelectric currents. In addition, the quantum ring is coupled to a photon cavity with a single photon mode and linearly polarized photon field. In a resonance regime, when the photon energy is approximately equal to the energy spacing between two lowest degenerate states of the ring, the polarized photon field can significantly control the heat and thermoelectric currents in the system. The roles of the number of photon initially in the cavity, and electron-photon coupling strength on spin-dependent heat and thermoelectric currents are presented.

Electrical detection of spin current and spin relaxation in nonmagnetic semiconductors

International Nuclear Information System (INIS)

Miah, M Idrish

2008-01-01

We report an electrical method for the detection of spin current and spin relaxation in nonmagnetic semiconductors. Optically polarized spins are dragged by an electric field in GaAs. We use the anomalous Hall effect for the detection of spin current and spin relaxation. It is found that the effect depends on the electric field and doping density as well as on temperature, but not on the excitation power. A calculation for the effect is performed using the measured spin polarization by a pump-probe experiment. The results are also discussed in comparison with a quantitative evaluation of the spin lifetimes of the photogenerated electrons under drift in GaAs

Electrical detection of spin current and spin relaxation in nonmagnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Miah, M Idrish [Nanoscale Science and Technology Centre and School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

2008-09-21

We report an electrical method for the detection of spin current and spin relaxation in nonmagnetic semiconductors. Optically polarized spins are dragged by an electric field in GaAs. We use the anomalous Hall effect for the detection of spin current and spin relaxation. It is found that the effect depends on the electric field and doping density as well as on temperature, but not on the excitation power. A calculation for the effect is performed using the measured spin polarization by a pump-probe experiment. The results are also discussed in comparison with a quantitative evaluation of the spin lifetimes of the photogenerated electrons under drift in GaAs.

Charge symmetry breaking in spin dependent parton distributions and the Bjorken sum rule

International Nuclear Information System (INIS)

Cloet, I.C.; Horsley, R.; Londergan, J.T.

2012-04-01

We present the rst determination of charge symmetry violation (CSV) in the spin-dependent parton distribution functions of the nucleon. This is done by determining the rst two Mellin moments of the spin-dependent parton distribution functions of the octet baryons from N f =2+1 lattice simulations. The results are compared with predictions from quark models of nucleon structure. We discuss the contribution of partonic spin CSV to the Bjorken sum rule, which is important because the CSV contributions represent the only partonic corrections to the Bjorken sum rule.

Charge symmetry breaking in spin dependent parton distributions and the Bjorken sum rule

Energy Technology Data Exchange (ETDEWEB)

Cloet, I.C. [Adelaide Univ, SA (Australia). CSSM, School of Chemistry and Physics; Horsley, R. [Edinburgh Univ. (United Kingdom). School of Physics and Astronomy; Londergan, J.T. [Indiana Univ., Bloomington, IN (US). Dept. of Physics and Center for Exploration of Energy and Matter] (and others)

2012-04-15

We present the rst determination of charge symmetry violation (CSV) in the spin-dependent parton distribution functions of the nucleon. This is done by determining the rst two Mellin moments of the spin-dependent parton distribution functions of the octet baryons from N{sub f}=2+1 lattice simulations. The results are compared with predictions from quark models of nucleon structure. We discuss the contribution of partonic spin CSV to the Bjorken sum rule, which is important because the CSV contributions represent the only partonic corrections to the Bjorken sum rule.

Spin effects in the screening and Auger neutralization of He+ ions in a spin-polarized electron gas

International Nuclear Information System (INIS)

Alducin, M.; Diez Muino, R.; Juaristi, J.I.

2005-01-01

The screening of a He + ion embedded in a free electron gas is studied for different spin-polarizations of the medium. Density functional theory and the local spin density approximation are used to calculate the induced electronic density for each spin orientation, i.e. parallel or antiparallel to the spin of the electron bound to the ion. Since both the He + ion and the electron gas are spin-polarized, we analyze in detail the spin state of the screening cloud for the two different possibilities: the spin of the bound electron can be parallel to either the majority spin or the minority spin in the medium. Finally, the spin-dependent Kohn-Sham orbitals are used to calculate the Auger neutralization rate of the He + ion. The polarization of the Auger excited electron is influenced by the spin-polarization of the medium. The results are discussed in terms of the spin-dependent screening and the indistinguishability of electrons with the same spin state

Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices

International Nuclear Information System (INIS)

Ishikawa, M.; Sugiyama, H.; Inokuchi, T.; Tanamoto, T.; Saito, Y.; Hamaya, K.; Tezuka, N.

2013-01-01

We study in detail how the bias voltage (V bias ) and interface resistance (RA) depend on the magnitude of spin accumulation signals (|ΔV| or |ΔV|/I, where I is current) as detected by three-terminal Hanle measurements in CoFe/MgO/Si on insulator (SOI) devices with various MgO layer thicknesses and SOI carrier densities. We find the apparent maximum magnitude of spin polarization as a function of V bias and the correlation between the magnitude of spin accumulation signals and the shape of differential conductance (dI/dV) curves within the framework of the standard spin diffusion model. All of the experimental results can be explained by taking into account the density of states (DOS) in CoFe under the influence of the applied V bias and the quality of MgO tunnel barrier. These results indicate that it is important to consider the DOS of the ferromagnetic materials under the influence of an applied V bias and the quality of tunnel barrier when observing large spin accumulation signals in Si

Magnon polarons in the spin seebeck effect

NARCIS (Netherlands)

Kikkawa, T.; Shen, K.; Flebus, B.; Duine, R.A.; Uchida, K.I.; Qiu, Z.; Bauer, G.E.W.; Saitoh, E.

2016-01-01

Sharp structures in the magnetic field-dependent spin Seebeck effect (SSE) voltages of Pt/Y3Fe5O12 at low temperatures are attributed to the magnon-phonon interaction. Experimental results are well reproduced by a Boltzmann theory that includes magnetoelastic coupling. The SSE anomalies coincide

Precision measurement of the neutron spin dependent structure functions

International Nuclear Information System (INIS)

Kolomensky, Y.G.

1997-02-01

In experiment E154 at the Stanford Linear Accelerator Center the spin dependent structure function g 1 n (x, Q 2 ) of the neutron was measured by scattering longitudinally polarized 48.3 GeV electrons off a longitudinally polarized 3 He target. The high beam energy allowed the author to extend the kinematic coverage compared to the previous SLAC experiments to 0.014 ≤ x ≤ 0.7 with an average Q 2 of 5 GeV 2 . The author reports the integral of the spin dependent structure function in the measured range to be ∫ 0.014 0.7 dx g 1 n (x, 5 GeV 2 ) = -0.036 ± 0.004(stat.) ± 0.005(syst.). The author observes relatively large values of g 1 n at low x that call into question the reliability of data extrapolation to x → 0. Such divergent behavior disagrees with predictions of the conventional Regge theory, but is qualitatively explained by perturbative QCD. The author performs a Next-to-Leading Order perturbative QCD analysis of the world data on the nucleon spin dependent structure functions g 1 p and g 1 n paying careful attention to the experimental and theoretical uncertainties. Using the parameterizations of the helicity-dependent parton distributions obtained in the analysis, the author evolves the data to Q 2 = 5 GeV 2 , determines the first moments of the polarized structure functions of the proton and neutron, and finds agreement with the Bjorken sum rule

Dependence of the Spin Transfer Torque Switching Current Density on the Exchange Stiffness Constant

OpenAIRE

You, Chun-Yeol

2012-01-01

We investigate the dependence of the switching current density on the exchange stiffness constant in the spin transfer torque magnetic tunneling junction structure with micromagnetic simulations. Since the widely accepted analytic expression of the switching current density is based on the macro-spin model, there is no dependence of the exchange stiffness constant. When the switching is occurred, however, the spin configuration forms C-, S-type, or complicated domain structures. Since the spi...

Enhanced Spin-Orbit Torque via Modulation of Spin Current Absorption

KAUST Repository

Qiu, Xuepeng

2016-11-18

The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent heavy metal (HM), strongly depends on the amount of spin current absorbed in the FM. We exploit the large spin absorption at the Ru interface to manipulate the SOTs in HM/FM/Ru multilayers. While the FM thickness is smaller than its spin dephasing length of 1.2 nm, the top Ru layer largely boosts the absorption of spin currents into the FM layer and substantially enhances the strength of SOT acting on the FM. Spin-pumping experiments induced by ferromagnetic resonance support our conclusions that the observed increase in the SOT efficiency can be attributed to an enhancement of the spin-current absorption. A theoretical model that considers both reflected and transmitted mixing conductances at the two interfaces of FM is developed to explain the results.

Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode

OpenAIRE

Saffarzadeh, Alireza; Daqiq, Reza

2009-01-01

We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to t...

Energy spectra in $p$-shell $\\Lambda$ hypernuclei and $^{19}_{\\Lambda}\\textrm{F}$ and spin-dependent $\\Lambda N$ interactions

OpenAIRE

Kanada-En'yo, Yoshiko; Isaka, Masahiro; Motoba, Toshio

2018-01-01

Energy spectra of $0s$-orbit $\\Lambda$ states in $p$-shell $\\Lambda$ hypernuclei ($^{A}_\\Lambda Z$) and those in $^{19}_{\\Lambda}\\textrm{F}$ are studied with the microscopic cluster model and antisymmetrized molecular dynamics using the $G$-matrix effective $\\Lambda N$ ($\\Lambda NG$) interactions. Spin-dependent terms of the ESC08a version of the $\\Lambda NG$ interactions are tested and phenomenologically tuned to reproduce observed energy spectra in $p$-shell $^{A}_\\Lambda Z$. Spin-dependent...

Spin Hall effect by surface roughness

KAUST Repository

Zhou, Lingjun

2015-01-08

The spin Hall and its inverse effects, driven by the spin orbit interaction, provide an interconversion mechanism between spin and charge currents. Since the spin Hall effect generates and manipulates spin current electrically, to achieve a large effect is becoming an important topic in both academia and industries. So far, materials with heavy elements carrying a strong spin orbit interaction, provide the only option. We propose here a new mechanism, using the surface roughness in ultrathin films, to enhance the spin Hall effect without heavy elements. Our analysis based on Cu and Al thin films suggests that surface roughness is capable of driving a spin Hall angle that is comparable to that in bulk Au. We also demonstrate that the spin Hall effect induced by surface roughness subscribes only to the side-jump contribution but not the skew scattering. The paradigm proposed in this paper provides the second, not if only, alternative to generate a sizable spin Hall effect.

A nonperturbative treatment of spin-dependent interactions of light and heavy quarkonia

International Nuclear Information System (INIS)

Schoeberl, F.

1986-01-01

We propose a nonrelativistic potential model with a regularized Coulomb potential at short range which leads to spin-dependent interactions which are at most as singular as 1/r. The Schroedinger equation is solved numerically including all spin-dependent interactions nonperturbatively. The predicted spectrum of light and heavy quarkonia is in remarkable agreement with experiment. Even the leptonic decay widths as well as the M1 transitions are in agreement with experiment. (Author)

Induced spin-accumulation and spin-polarization in a quantum-dot ring by using magnetic quantum dots and Rashba spin-orbit effect

International Nuclear Information System (INIS)

Eslami, L.; Faizabadi, E.

2014-01-01

The effect of magnetic contacts on spin-dependent electron transport and spin-accumulation in a quantum ring, which is threaded by a magnetic flux, is studied. The quantum ring is made up of four quantum dots, where two of them possess magnetic structure and other ones are subjected to the Rashba spin-orbit coupling. The magnetic quantum dots, referred to as magnetic quantum contacts, are connected to two external leads. Two different configurations of magnetic moments of the quantum contacts are considered; the parallel and the anti-parallel ones. When the magnetic moments are parallel, the degeneracy between the transmission coefficients of spin-up and spin-down electrons is lifted and the system can be adjusted to operate as a spin-filter. In addition, the accumulation of spin-up and spin-down electrons in non-magnetic quantum dots are different in the case of parallel magnetic moments. When the intra-dot Coulomb interaction is taken into account, we find that the electron interactions participate in separation between the accumulations of electrons with different spin directions in non-magnetic quantum dots. Furthermore, the spin-accumulation in non-magnetic quantum dots can be tuned in the both parallel and anti-parallel magnetic moments by adjusting the Rashba spin-orbit strength and the magnetic flux. Thus, the quantum ring with magnetic quantum contacts could be utilized to create tunable local magnetic moments which can be used in designing optimized nanodevices.

Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

International Nuclear Information System (INIS)

Miah, M. Idrish; Kityk, I.V.; Gray, E. MacA.

2007-01-01

The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage

Detection and study of photo-generated spin currents in nonmagnetic semiconductor materials

Energy Technology Data Exchange (ETDEWEB)

Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au; Kityk, I.V. [Institute of Physics, J. Dlugosz University Czestochowa, PL-42201 Czestochowa (Poland); Gray, E. MacA. [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

2007-10-15

The longitudinal current in Si-doped gallium arsenide was spin-polarized using circularly polarized light. The spin current was detected by the extraordinary Hall effect. An enhancement of Hall conductivity with increasing moderately Si-doping was found, indicating that the introduction of dopants increases the electronic spin polarization. This finding may provide an opportunity for controlling and manipulating nonmagnetic semiconductors via electron spin for operating device applications. Band energy calculations using pseudopotentials confirm the influence of Si content and electron-phonon interaction on the behaviour of the spin current and hence on the spin-dependent Hall voltage.

Anomalous spin-dependent tunneling statistics in Fe/MgO/Fe junctions induced by disorder at the interface

Science.gov (United States)

Yan, Jiawei; Wang, Shizhuo; Xia, Ke; Ke, Youqi

2018-01-01

We present first-principles analysis of interfacial disorder effects on spin-dependent tunneling statistics in thin Fe/MgO/Fe magnetic tunnel junctions. We find that interfacial disorder scattering can significantly modulate the tunneling statistics in the minority spin of the parallel configuration (PC) while all other spin channels remain dominated by the Poissonian process. For the minority-spin channel of PC, interfacial disorder scattering favors the formation of resonant tunneling channels by lifting the limitation of symmetry conservation at low concentration, presenting an important sub-Poissonian process in PC, but is destructive to the open channels at high concentration. We find that the important modulation of tunneling statistics is independent of the type of interfacial disorder. A bimodal distribution function of transmission with disorder dependence is introduced and fits very well our first-principles results. The increase of MgO thickness can quickly change the tunneling from a sub-Poissonian to Poissonian dominated process in the minority spin of PC with disorder. Our results provide a sensitive detection method of an ultralow concentration of interfacial defects.

Temperature dependence of the extraordinary Hall effect in magnetic granular alloys

International Nuclear Information System (INIS)

Granovsky, A.; Kalitsov, A.; Khanikaev, A.; Sato, H.; Aoki, Y.

2003-01-01

We present the results of theoretical investigation of the temperature dependence of the extraordinary Hall effect (EHE) in granular metal-metal and metal-insulator alloys in the case of electron-phonon scattering at high temperatures. Skew scattering is assumed to be the dominant mechanism of the EHE. The calculations were carried out using Zhang-Levy model and the effective-medium approximation. The single-site electron-phonon interaction model was considered by analogy to that one in the theory of disordered alloys. In the case of strong spin-dependent scattering there is an additional term in the temperature dependence of the EHE coefficient of magnetic granular alloys in comparison with that for bulk ferromagnets. This term is linear with T 3 . The similar temperature dependence for the EHE conductivity in granular metal-metal and metal-insulator alloys takes place in spite of the different origin of giant magnetoresistance in these systems. The strong temperature dependence of the EHE coefficient can be viewed as an evidence of enhanced spin-orbit interaction at interfaces between granules and the matrix. We show a linear correlation between the interface contribution to the EHE coefficient and the interface contribution to alloy resistivity. The obtained results are in a qualitative agreement with the recent experimental data for nanocomposites

Temperature dependence of the extraordinary Hall effect in magnetic granular alloys

Energy Technology Data Exchange (ETDEWEB)

Granovsky, A. E-mail: granov@magn.ru; Kalitsov, A.; Khanikaev, A.; Sato, H.; Aoki, Y

2003-02-01

We present the results of theoretical investigation of the temperature dependence of the extraordinary Hall effect (EHE) in granular metal-metal and metal-insulator alloys in the case of electron-phonon scattering at high temperatures. Skew scattering is assumed to be the dominant mechanism of the EHE. The calculations were carried out using Zhang-Levy model and the effective-medium approximation. The single-site electron-phonon interaction model was considered by analogy to that one in the theory of disordered alloys. In the case of strong spin-dependent scattering there is an additional term in the temperature dependence of the EHE coefficient of magnetic granular alloys in comparison with that for bulk ferromagnets. This term is linear with T{sup 3}. The similar temperature dependence for the EHE conductivity in granular metal-metal and metal-insulator alloys takes place in spite of the different origin of giant magnetoresistance in these systems. The strong temperature dependence of the EHE coefficient can be viewed as an evidence of enhanced spin-orbit interaction at interfaces between granules and the matrix. We show a linear correlation between the interface contribution to the EHE coefficient and the interface contribution to alloy resistivity. The obtained results are in a qualitative agreement with the recent experimental data for nanocomposites.

Novel spin effects in quantum chromodynamics

International Nuclear Information System (INIS)

Brodsky, S.J.

1993-02-01

This report discusses a number of interesting hadronic spin effects which test fundamental features of perturbative and non-perturbative QCD. These include constraints on the shape and normalization of the polarized quark and gluon structure functions of the proton; the principle of hadron helicity retention in high x F inclusive reactions; predictions based on total hadron helicity conservation in high momentum transfer exclusive reactions; the dependence of nuclear structure functions and shadowing on virtual photon polarization; and general constraints on the magnetic moment of hadrons. I also will discuss the implications of several measurements which are in striking conflict with leading-twist perturbative QCD predictions, such as the extraordinarily large spin correlation A NN observed in large angle proton-proton scattering, the anomalously large ρπ branching ratio of the J/ψ, and the rapidly changing polarization dependence of both J/ψ and continuum lepton pair hadroproduction observed at large x F

''Spin-dependent'' μ → e conversion on light nuclei

International Nuclear Information System (INIS)

Davidson, Sacha; Saporta, Albert; Kuno, Yoshitaka

2018-01-01

The experimental sensitivity to μ → e conversion will improve by four or more orders of magnitude in coming years, making it interesting to consider the ''spin-dependent'' (SD) contribution to the rate. This process does not benefit from the atomic-number-squared enhancement of the spin-independent (SI) contribution, but probes different operators. We give details of our recent estimate of the spin-dependent rate, expressed as a function of operator coefficients at the experimental scale. Then we explore the prospects for distinguishing coefficients or models by using different targets, both in an EFT perspective, where a geometric representation of different targets as vectors in coefficient space is introduced, and also in three leptoquark models. It is found that comparing the rate on isotopes with and without spin could allow one to detect spin-dependent coefficients that are at least a factor of few larger than the spin-independent ones. Distinguishing among the axial, tensor and pseudoscalar operators that induce the SD rate would require calculating the nuclear matrix elements for the second two. Comparing the SD rate on nuclei with an odd proton vs. odd neutron could allow one to distinguish operators involving u quarks from those involving d quarks; this is interesting because the distinction is difficult to make for SI operators. (orig.)

''Spin-dependent'' μ → e conversion on light nuclei

Energy Technology Data Exchange (ETDEWEB)

Davidson, Sacha; Saporta, Albert [IPNL, CNRS/IN2P3, Villeurbanne (France); Universite Claude Bernard Lyon 1, Villeurbanne (France); Universite de Lyon, Lyon (France); Kuno, Yoshitaka [Osaka University, Department of Physics, Toyonaka, Osaka (Japan)

2018-02-15

The experimental sensitivity to μ → e conversion will improve by four or more orders of magnitude in coming years, making it interesting to consider the ''spin-dependent'' (SD) contribution to the rate. This process does not benefit from the atomic-number-squared enhancement of the spin-independent (SI) contribution, but probes different operators. We give details of our recent estimate of the spin-dependent rate, expressed as a function of operator coefficients at the experimental scale. Then we explore the prospects for distinguishing coefficients or models by using different targets, both in an EFT perspective, where a geometric representation of different targets as vectors in coefficient space is introduced, and also in three leptoquark models. It is found that comparing the rate on isotopes with and without spin could allow one to detect spin-dependent coefficients that are at least a factor of few larger than the spin-independent ones. Distinguishing among the axial, tensor and pseudoscalar operators that induce the SD rate would require calculating the nuclear matrix elements for the second two. Comparing the SD rate on nuclei with an odd proton vs. odd neutron could allow one to distinguish operators involving u quarks from those involving d quarks; this is interesting because the distinction is difficult to make for SI operators. (orig.)

Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs

International Nuclear Information System (INIS)

Ney, A; Harris, J S Jr; Parkin, S S P

2006-01-01

The temperature dependence of the magnetization of a light emitting diode having a ferromagnetic contact (spin-LED) is measured from 2 to 300 K in magnetic fields from 30 to 70 kOe and it is found that it originates from the GaAs substrate. The magnetization of GaAs comprises a van Vleck-type paramagnetic contribution to the susceptibility which scales inversely with the band gap of the semiconductor. Thus, the temperature dependence of the band gap of GaAs accounts for the non-linear temperature dependent magnetic susceptibility of GaAs and thus, at large magnetic fields, for the spin-LED

Spin-dependent hot electron transport and nano-scale magnetic imaging of metal/Si structures

International Nuclear Information System (INIS)

Kaidatzis, A.

2008-10-01

In this work, we experimentally study spin-dependent hot electron transport through metallic multilayers (ML), containing single magnetic layers or 'spin-valve' (SV) tri layers. For this purpose, we have set up a ballistic electron emission microscope (BEEM), a three terminal extension of scanning tunnelling microscopy on metal/semiconductor structures. The implementation of the BEEM requirements into the sample fabrication is described in detail. Using BEEM, the hot electron transmission through the ML's was systematically measured in the energy range 1-2 eV above the Fermi level. By varying the magnetic layer thickness, the spin-dependent hot electron attenuation lengths were deduced. For the materials studied (Co and NiFe), they were compared to calculations and other determinations in the literature. For sub-monolayer thickness, a non uniform morphology was observed, with large transmission variations over sub-nano-metric distances. This effect is not yet fully understood. In the imaging mode, the magnetic configurations of SV's were studied under field, focusing on 360 degrees domain walls in Co layers. The effects of the applied field intensity and direction on the DW structure were studied. The results were compared quantitatively to micro-magnetic calculations, with an excellent agreement. From this, it can be shown that the BEEM magnetic resolution is better than 50 nm. (author)

Limits on Spin-Dependent WIMP-Nucleon Cross Section Obtained from the Complete LUX Exposure

Science.gov (United States)

Akerib, D. S.; Alsum, S.; Araújo, H. M.; Bai, X.; Bailey, A. J.; Balajthy, J.; Beltrame, P.; Bernard, E. P.; Bernstein, A.; Biesiadzinski, T. P.; Boulton, E. M.; Brás, P.; Byram, D.; Cahn, S. B.; Carmona-Benitez, M. C.; Chan, C.; Chiller, A. A.; Chiller, C.; Currie, A.; Cutter, J. E.; Davison, T. J. R.; Dobi, A.; Dobson, J. E. Y.; Druszkiewicz, E.; Edwards, B. N.; Faham, C. H.; Fallon, S. R.; Fiorucci, S.; Gaitskell, R. J.; Gehman, V. M.; Ghag, C.; Gilchriese, M. G. D.; Hall, C. R.; Hanhardt, M.; Haselschwardt, S. J.; Hertel, S. A.; Hogan, D. P.; Horn, M.; Huang, D. Q.; Ignarra, C. M.; Jacobsen, R. G.; Ji, W.; Kamdin, K.; Kazkaz, K.; Khaitan, D.; Knoche, R.; Larsen, N. A.; Lee, C.; Lenardo, B. G.; Lesko, K. T.; Lindote, A.; Lopes, M. I.; Manalaysay, A.; Mannino, R. L.; Marzioni, M. F.; McKinsey, D. N.; Mei, D.-M.; Mock, J.; Moongweluwan, M.; Morad, J. A.; Murphy, A. St. J.; Nehrkorn, C.; Nelson, H. N.; Neves, F.; O'Sullivan, K.; Oliver-Mallory, K. C.; Palladino, K. J.; Pease, E. K.; Reichhart, L.; Rhyne, C.; Shaw, S.; Shutt, T. A.; Silva, C.; Solmaz, M.; Solovov, V. N.; Sorensen, P.; Stephenson, S.; Sumner, T. J.; Szydagis, M.; Taylor, D. J.; Taylor, W. C.; Tennyson, B. P.; Terman, P. A.; Tiedt, D. R.; To, W. H.; Tripathi, M.; Tvrznikova, L.; Uvarov, S.; Velan, V.; Verbus, J. R.; Webb, R. C.; White, J. T.; Whitis, T. J.; Witherell, M. S.; Wolfs, F. L. H.; Xu, J.; Yazdani, K.; Young, S. K.; Zhang, C.; LUX Collaboration

2017-06-01

We present experimental constraints on the spin-dependent WIMP-nucleon elastic cross sections from the total 129.5 kg yr exposure acquired by the Large Underground Xenon experiment (LUX), operating at the Sanford Underground Research Facility in Lead, South Dakota (USA). A profile likelihood ratio analysis allows 90% C.L. upper limits to be set on the WIMP-neutron (WIMP-proton) cross section of σn=1.6 ×10-41 cm2 (σp=5 ×10-40 cm2 ) at 35 GeV c-2 , almost a sixfold improvement over the previous LUX spin-dependent results. The spin-dependent WIMP-neutron limit is the most sensitive constraint to date.

Spin-polarization and spin-flip in a triple-quantum-dot ring by using tunable lateral bias voltage and Rashba spin-orbit interaction

Energy Technology Data Exchange (ETDEWEB)

Molavi, Mohamad, E-mail: Mo_molavi@yahoo.com [Faculty of Physics, Kharazmi University, Tehran (Iran, Islamic Republic of); Faizabadi, Edris, E-mail: Edris@iust.ac.ir [School of Physics, Iran University of Science and Technology, 16846 Tehran (Iran, Islamic Republic of)

2017-04-15

By using the Green's function formalism, we investigate the effects of single particle energy levels of a quantum dot on the spin-dependent transmission properties through a triple-quantum-dot ring structure. In this structure, one of the quantum dots has been regarded to be non-magnetic and the Rashba spin-orbit interaction is imposed locally on this dot while the two others can be magnetic. The on-site energy of dots, manipulates the interference of the electron spinors that are transmitted to output leads. Our results show that the effects of magnetic dots on spin-dependent transmission properties are the same as the difference of on-site energies of the various dots, which is applicable by a controllable lateral bias voltage externally. Besides, by tuning the parameters such as Rashba spin-orbit interaction, and on-site energy of dots and magnetic flux inside the ring, the structure can be indicated the spin-flip effect and behave as a full spin polarizer or splitter. - Highlights: • The effects of magnetic dots on spin-dependent transmission properties are the same as the difference of on-site energies of the various dots. • In the situation that the QDs have non-zero on-site energies, the system can demonstrate the full spin-polarization. • By tuning the Rashba spin-orbit strength and magnetic flux encountered by the ring the system operates as a Stern-Gerlach apparatus.

Quantitative characterization of spin-orbit torques in Pt/Co/Pt/Co/Ta/BTO heterostructures due to the magnetization azimuthal angle dependence

Science.gov (United States)

Engel, Christian; Goolaup, Sarjoosing; Luo, Feilong; Lew, Wen Siang

2017-08-01

Substantial understanding of spin-orbit interactions in heavy-metal (HM)/ferromagnet (FM) heterostructures is crucial in developing spin-orbit torque (SOT) spintronics devices utilizing spin Hall and Rashba effects. Though the study of SOT effective field dependence on the out-of-plane magnetization angle has been relatively extensive, the understanding of in-plane magnetization angle dependence remains unknown. Here, we analytically propose a method to compute the SOT effective fields as a function of the in-plane magnetization angle using the harmonic Hall technique in perpendicular magnetic anisotropy (PMA) structures. Two different samples with PMA, a Pt /Co /Pt /Co /Ta /BaTi O3 (BTO) test sample and a Pt/Co/Pt/Co/Ta reference sample, are studied using the derived formula. Our measurements reveal that only the dampinglike field of the test sample with a BTO capping layer exhibits an in-plane magnetization angle dependence, while no angular dependence is found in the reference sample. The presence of the BTO layer in the test sample, which gives rise to a Rashba effect at the interface, is ascribed as the source of the angular dependence of the dampinglike field.

Inverse spin Hall effect by spin injection

Science.gov (United States)

Liu, S. Y.; Horing, Norman J. M.; Lei, X. L.

2007-09-01

Motivated by a recent experiment [S. O. Valenzuela and M. Tinkham, Nature (London) 442, 176 (2006)], the authors present a quantitative microscopic theory to investigate the inverse spin-Hall effect with spin injection into aluminum considering both intrinsic and extrinsic spin-orbit couplings using the orthogonalized-plane-wave method. Their theoretical results are in good agreement with the experimental data. It is also clear that the magnitude of the anomalous Hall resistivity is mainly due to contributions from extrinsic skew scattering.

Spin pumping damping and magnetic proximity effect in Pd and Pt spin-sink layers

Science.gov (United States)

Caminale, M.; Ghosh, A.; Auffret, S.; Ebels, U.; Ollefs, K.; Wilhelm, F.; Rogalev, A.; Bailey, W. E.

2016-07-01

We investigated the spin pumping damping contributed by paramagnetic layers (Pd, Pt) in both direct and indirect contact with ferromagnetic Ni81Fe19 films. We find a nearly linear dependence of the interface-related Gilbert damping enhancement Δ α on the heavy-metal spin-sink layer thicknesses tN in direct-contact Ni81Fe19 /(Pd, Pt) junctions, whereas an exponential dependence is observed when Ni81Fe19 and (Pd, Pt) are separated by 3 nm Cu. We attribute the quasilinear thickness dependence to the presence of induced moments in Pt, Pd near the interface with Ni81Fe19 , quantified using x-ray magnetic circular dichroism measurements. Our results show that the scattering of pure spin current is configuration-dependent in these systems and cannot be described by a single characteristic length.

Interlayer quality dependent graphene spin valve

Energy Technology Data Exchange (ETDEWEB)

Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640 Pakistan (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul, 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan); Murtaza, Ghulam [Centre for Advanced Studies in Physics, Government College University, Lahore 54000 (Pakistan); Ramay, Shahid Mahmood [Physics & Astronomy Department, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)

2017-01-15

It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

Interlayer quality dependent graphene spin valve

International Nuclear Information System (INIS)

Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Iqbal, Muhammad Waqas; Murtaza, Ghulam; Ramay, Shahid Mahmood

2017-01-01

It is possible to utilize the new class of materials for emerging two-dimensional (2D) spintronic applications. Here, the role of defects in the graphene interlayer and its influence on the spin valve signal is reported. The emergence of D peak in Raman spectrum reveals defects in the graphene layer. The linear I-V curve for defective and non-defective graphene samples indicate the ohmic nature of NiFe and graphene contact. A non-uniform magnetoresistive effect with a bump is persistently observed for defective graphene device at various temperatures, while a smooth and symmetric signal is detected for non-defective graphene spin valve. Parallel and antiparallel alignments of magnetization of magnetic materials shows low and high resistance states, respectively. The magnetoresistance (MR) ratio for defective graphene NiFe/graphene/NiFe spin valve is measured to be ~0.16% at 300 K which progresses to ~0.39% for non-defective graphene device at the same temperature. Similarly at 4.2 K the MR ratios are reported to be ~0.41% and ~0.78% for defective and non-defective graphene devices, respectively. Our investigation provides an evidence for relatively better response of the spin valve signal with high quality graphene interlayer.

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni) molecular devices based on zigzag graphene nanoribbon electrodes

Science.gov (United States)

Li, Dongde; Wu, Di; Zhang, Xiaojiao; Zeng, Bowen; Li, Mingjun; Duan, Haiming; Yang, Bingchu; Long, Mengqiu

2018-05-01

The spin-dependent electronic transport properties of M(dcdmp)2 (M = Cu, Au, Co, Ni; dcdmp = 2,3-dicyano-5,6-dimercaptopyrazyne) molecular devices based on zigzag graphene nanoribbon (ZGNR) electrodes were investigated by density functional theory combined nonequilibrium Green's function method (DFT-NEGF). Our results show that the spin-dependent transport properties of the M(dcdmp)2 molecular devices can be controlled by the spin configurations of the ZGNR electrodes, and the central 3d-transition metal atom can introduce a larger magnetism than that of the nonferrous metal one. Moreover, the perfect spin filtering effect, negative differential resistance, rectifying effect and magnetic resistance phenomena can be observed in our proposed M(dcdmp)2 molecular devices.

Spin caloritronics, origin and outlook

International Nuclear Information System (INIS)

Yu, Haiming; Brechet, Sylvain D.; Ansermet, Jean-Philippe

2017-01-01

Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated. - Highlights: • Thermodynamic description of transport: three-current model. • Magneto-thermoelectric power and spin-dependent Peltier effects. • Thermal

Spin caloritronics, origin and outlook

Energy Technology Data Exchange (ETDEWEB)

Yu, Haiming, E-mail: haiming.yu@buaa.edu.cn [Fert Beijing Institute, School of Electronic and Information Engineering, BDBC, Beihang University (China); Brechet, Sylvain D. [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland); Ansermet, Jean-Philippe, E-mail: jean-philippe.ansermet@epfl.ch [Institute of Physics, station 3, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne-EPFL (Switzerland)

2017-03-03

Spin caloritronics refers to research efforts in spintronics when a heat current plays a role. In this review, we start out by reviewing the predictions that can be drawn from the thermodynamics of irreversible processes. This serves as a conceptual framework in which to analyze the interplay of charge, spin and heat transport. This formalism predicts tensorial relations between vectorial quantities such as currents and gradients of chemical potentials or of temperature. Transverse effects such as the Nernst or Hall effects are predicted on the basis that these tensors can include an anti-symmetric contribution, which can be written with a vectorial cross-product. The local symmetry of the system may determine the direction of the vector defining such transverse effects, such as the surface of an isotropic medium. By including magnetization as state field in the thermodynamic description, spin currents appear naturally from the continuity equation for the magnetization, and dissipative spin torques are derived, which are charge-driven or heat-driven. Thermodynamics does not give the strength of these effects, but may provide relationships between them. Based on this framework, the review proceeds by showing how these effects have been observed in various systems. Spintronics has become a vast field of research, and the experiments highlighted in this review pertain only to heat effects on transport and magnetization dynamics, such as magneto-thermoelectric power, or the spin-dependence of the Seebeck effect, the spin-dependence of the Peltier effect, the spin Seebeck effect, the magnetic Seebeck effect, or the Nernst effect. The review concludes by pointing out predicted effects that are yet to be verified experimentally, and in what novel materials the standard thermal spin effects could be investigated. - Highlights: • Thermodynamic description of transport: three-current model. • Magneto-thermoelectric power and spin-dependent Peltier effects. • Thermal

Universal spin dynamics in quantum wires

Energy Technology Data Exchange (ETDEWEB)

Fajardo, E. A.; Zülicke, U.; Winkler, R.

2017-10-01

We discuss the universal spin dynamics in quasi-one-dimensional systems including the real spin in narrow-gap semiconductors like InAs and InSb, the valley pseudospin in staggered single-layer graphene, and the combination of real spin and valley pseudospin characterizing single-layer transition metal dichalcogenides (TMDCs) such as MoS2, WS2, MoS2, and WSe2. All these systems can be described by the same Dirac-like Hamiltonian. Spin-dependent observable effects in one of these systems thus have counterparts in each of the other systems. Effects discussed in more detail include equilibrium spin currents, current-induced spin polarization (Edelstein effect), and spin currents generated via adiabatic spin pumping. Our work also suggests that a long-debated spin-dependent correction to the position operator in single-band models should be absent.

Transverse spin effects

International Nuclear Information System (INIS)

Ratcliffe, P.G.

1993-01-01

A discussion is presented of the role that transverse spin physics can play in providing information on the bound state dynamics in hadronic physics. Care is taken to distinguish between single- and double-spin measurements, each being discussed separately. In the case of single-spin effects it is stressed that as yet no satisfactory explanation has been provided within the framework if perturbative QCD which in fact generally predicts negligible effects. In order to clarify the situation experimental data at yet higher p T are necessary and semi-leptonic data could shed some light on the underlying scattering mechanisms. As regards double-spin correlations, the theoretical picture (although clouded by some ill-informed, often erroneous statements and even recent papers) is rather well understood and what is dearly missing is the experimental study of, for example, g 2 in deep-inelastic scattering. (author). 31 refs

Spin-zero DKP equation with two time-dependent interactions

Energy Technology Data Exchange (ETDEWEB)

Saeedi, K.; Hassanabadi, H. [Shahrood University of Technology, Physics Department, Shahrood (Iran, Islamic Republic of); Zarrinkamar, S. [Islamic Azad University, Department of Basic Sciences, Garmsar Branch, Garmsar (Iran, Islamic Republic of)

2016-11-15

The Duffin-Kemmer-Petiau equation for spin-zero bosons is considered in (1 + 1) - and (2 + 1) -dimensional space-time. Some time-dependent interactions are considered within the framework and quasi-exact solutions are provided. The results are discussed via various figures. (orig.)

Effect of Twisting and Stretching on Magneto Resistance and Spin Filtration in CNTs

Directory of Open Access Journals (Sweden)

Anil Kumar Singh

2017-08-01

Full Text Available Spin-dependent quantum transport properties in twisted carbon nanotube and stretched carbon nanotube are calculated using density functional theory (DFT and non-equilibrium green’s function (NEGF formulation. Twisting and stretching have no effect on spin transport in CNTs at low bias voltages. However, at high bias voltages the effects are significant. Stretching restricts any spin-up current in antiparallel configuration (APC, which results in higher magneto resistance (MR. Twisting allows spin-up current almost equivalent to the pristine CNT case, resulting in lower MR. High spin filtration is observed in PC and APC for pristine, stretched and twisted structures at all applied voltages. In APC, at low voltages spin filtration in stretched CNT is higher than in pristine and twisted ones, with pristine giving a higher spin filtration than twisted CNT.

Neutron spin quantum precession using multilayer spin splitters and a phase-spin echo interferometer

International Nuclear Information System (INIS)

Ebisawa, Toru; Tasaki, Seiji; Kawai, Takeshi; Hino, Masahiro; Akiyoshi, Tsunekazu; Achiwa, Norio; Otake, Yoshie; Funahashi, Haruhiko.

1996-01-01

Neutron spin quantum precession by multilayer spin splitter has been demonstrated using a new spin interferometer. The multilayer spin splitter consists of a magnetic multilayer mirror on top, followed by a gap layer and a non magnetic multilayer mirror which are evaporated on a silicon substrate. Using the multilayer spin splitter, a polarized neutron wave in a magnetic field perpendicular to the polarization is split into two spin eigenstates with a phase shift in the direction of the magnetic field. The spin quantum precession is equal to the phase shift, which depends on the effective thickness of the gap layer. The demonstration experiments verify the multilayer spin splitter as a neutron spin precession device as well as the coherent superposition principle of the two spin eigenstates. We have developed a new phase-spin echo interferometer using the multilayer spin splitters. We present successful performance tests of the multilayer spin splitter and the phase-spin echo interferometer. (author)

Magnetoresistance in RCo2 spin-fluctuation systems

International Nuclear Information System (INIS)

Gratz, E.; Nowotny, H.; Enser, J.; Bauer, E.; Hense, K.

2004-01-01

The effect of the spin fluctuations on the field and temperature dependence of the magnetoresistance in ScCo 2 and LuCo 2 was studied. The experimental data where explained assuming two competing mechanisms determining the magnetoresistance of these substances. One is the 'normal magnetoresistance' caused by the influence of the Lorentz force on conduction electron trajectories. The other is due to the suppression of the spin fluctuations caused by an external magnetic field. This interplay give rise to a pronounced drop of the magnetoresistance towards the lower temperature range

Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

Science.gov (United States)

Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

2018-01-01

Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

External electric field driven modification of the anomalous and spin Hall conductivities in Fe thin films on MgO(001)

Science.gov (United States)

Pradipto, Abdul-Muizz; Akiyama, Toru; Ito, Tomonori; Nakamura, Kohji

2018-01-01

The effects of applying external electric fields to the anomalous and spin Hall conductivities in Fe thin-film models with different layer thicknesses on MgO(001) are investigated by using first-principles calculations. We observe that, for the considered systems, the application of positive electric field associated with the accumulation of negative charges on the Fe side generally decreases (increases) the anomalous (spin) Hall conductivities. The mapping of the Hall conductivities within the two-dimensional Brillouin zone shows that the electric-field-induced modifications are related to the modification of the band structures of the atoms at the interface with the MgO substrate. In particular, the external electric field affects the Hall conductivities via the modifications of the dx z,dy z orbitals, in which the application of positive electric field pushes the minority-spin states of the dx z,dy z bands closer to the Fermi level. Better agreement with the anomalous Hall conductivity for bulk Fe and a more realistic scenario for the electric field modification of Hall conductivities are obtained by using the thicker layers of Fe on MgO (Fe3/MgO and Fe5/MgO).

The effect of electrodes on 11 acene molecular spin valve: Semi-empirical study

Science.gov (United States)

Aadhityan, A.; Preferencial Kala, C.; John Thiruvadigal, D.

2017-10-01

A new revolution in electronics is molecular spintronics, with the contemporary evolution of the two novel disciplines of spintronics and molecular electronics. The key point is the creation of molecular spin valve which consists of a diamagnetic molecule in between two magnetic leads. In this paper, non-equilibrium Green's function (NEGF) combined with Extended Huckel Theory (EHT); a semi-empirical approach is used to analyse the electron transport characteristics of 11 acene molecular spin valve. We examine the spin-dependence transport on 11 acene molecular junction with various semi-infinite electrodes as Iron, Cobalt and Nickel. To analyse the spin-dependence transport properties the left and right electrodes are joined to the central region in parallel and anti-parallel configurations. We computed spin polarised device density of states, projected device density of states of carbon and the electrode element, and transmission of these devices. The results demonstrate that the effect of electrodes modifying the spin-dependence behaviours of these systems in a controlled way. In Parallel and anti-parallel configuration the separation of spin up and spin down is lager in the case of iron electrode than nickel and cobalt electrodes. It shows that iron is the best electrode for 11 acene spin valve device. Our theoretical results are reasonably impressive and trigger our motivation for comprehending the transport properties of these molecular-sized contacts.